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Sample records for doped gaas schottky

  1. The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier

    SciTech Connect

    Shestakov, A. K. Zhuravlev, K. S.

    2011-12-15

    A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The physical processes controlling the transistor characteristics in the case of a variation in the parameters of its doping profile and the coefficient of compensation of the substrate are studied. Based on calculations, the optimal doping-profile parameters ensuring the best characteristics for transistors are predicted.

  2. Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (2 1 1) and (3 1 1) oriented GaAs substrates

    NASA Astrophysics Data System (ADS)

    Boumaraf, R.; Sengouga, N.; Mari, R. H.; Meftah, Af.; Aziz, M.; Jameel, Dler; Al Saqri, Noor; Taylor, D.; Henini, M.

    2014-01-01

    The SILVACO-TCAD numerical simulator is used to explain the effect of different types of deep levels on the temperature dependence of the capacitance of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates, namely (3 1 1)A and (2 1 1)A oriented GaAs substrates. For the (3 1 1)A diodes, the measured capacitance-temperature characteristics at different reverse biases show a large peak while the (2 1 1)A devices display a much smaller one. This peak is related to the presence of different types of deep levels in the two structures. These deep levels are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (3 1 1)A structure only majority deep levels (hole deep levels) were observed while both majority and minority deep levels were present in the (2 1 1)A diodes. The simulation software, which calculates the capacitance-voltage and the capacitance-temperature characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behavior of the capacitance-temperature properties. A further evidence to confirm that deep levels are responsible for the observed phenomenon is provided by a simulation of the capacitance-temperature characteristics as a function of the ac-signal frequency.

  3. Terahertz pulse detection by the GaAs Schottky diodes

    NASA Astrophysics Data System (ADS)

    Laperashvili, Tina; Kvitsiani, Orest; Imerlishvili, Ilia; Laperashvili, David

    2010-06-01

    We present the results of experimental studies of physical properties of the detection process of GaAs Schottky diodes for terahertz frequency radiation. The development of technology in the THz frequency band has a rapid progress recently. Considered as an extension of the microwave and millimeter wave bands, the THz frequency offers greater communication bandwidth than is available at microwave frequencies. The Schottky barrier contact has an important role in the operation of many GaAs devices. GaAs Schottky diodes have been the primary nonlinear device used in millimeter and sub millimeter wave detectors and receivers. GaAs Schottky diodes are especially interesting due to their high mobility transport characteristics, which allows for a large reduction of the resistance-capacitance (RC) time constant and thermal noise. In This work are investigated the electrical and photoelectric properties of GaAs Schottky diodes. Samples were obtained by deposition of different metals (Au, Ni, Pt, Pd, Fe, In, Ga, Al) on semiconductor. For fabrication metal-semiconductor (MS) structures is used original method of metal electrodepositing. In this method electrochemical etching of semiconductor surface occurs just before deposition of metal from the solution, which contains etching material and metal ions together. For that, semiconductor surface cleaning processes and metal deposition carries out in the same technological process. In the experiments as the electrolyte was used aqueous solution of chlorides. Metal deposition was carried out at room temperature.

  4. Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy

    NASA Astrophysics Data System (ADS)

    di Mario, Lorenzo; Turchini, Stefano; Zamborlini, Giovanni; Feyer, Vitaly; Tian, Lin; Schneider, Claus M.; Rubini, Silvia; Martelli, Faustino

    2016-11-01

    We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.

  5. Photoluminescence of Mn+ doped GaAs

    NASA Astrophysics Data System (ADS)

    Zhou, Huiying; Qu, Shengchun; Liao, Shuzhi; Zhang, Fasheng; Liu, Junpeng; Wang, Zhanguo

    2010-10-01

    Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

  6. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  7. Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

    2016-10-01

    The threshold voltage degradation due to the hot carrier induced localized charges (LC) is a major reliability concern for nanoscale Schottky barrier (SB) cylindrical gate all around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). The degradation physics of gate material engineered (GME)-SB-GAA MOSFETs due to LC is still unexplored. An explicit threshold voltage degradation model for GME-SB-GAA-MOSFETs with the incorporation of localized charges (N it) is developed. To accurately model the threshold voltage the minimum channel carrier density has been taken into account. The model renders how +/- LC affects the device subthreshold performance. One-dimensional (1D) Poisson’s and 2D Laplace equations have been solved for two different regions (fresh and damaged) with two different gate metal work-functions. LCs are considered at the drain side with low gate metal work-function as N it is more vulnerable towards the drain. For the reduction of carrier mobility degradation, a lightly doped channel has been considered. The proposed model also includes the effect of barrier height lowering at the metal-semiconductor interface. The developed model results have been verified using numerical simulation data obtained by the ATLAS-3D device simulator and excellent agreement is observed between analytical and simulation results.

  8. Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET

    NASA Astrophysics Data System (ADS)

    Zahra, Ahangari; Morteza, Fathipour

    2013-09-01

    This paper explores the band structure effect to elucidate the feasibility of an ultra-scaled GaAs Schottky MOSFET (SBFET) in a nanoscale regime. We have employed a 20-band sp3d5 s* tight-binding (TB) approach to compute E — K dispersion. The considerable difference between the extracted effective masses from the TB approach and bulk values implies that quantum confinement affects the device performance. Beside high injection velocity, the ultra-scaled GaAs SBFET suffers from a low conduction band DOS in the Γ valley that results in serious degradation of the gate capacitance. Quantum confinement also results in an increment of the effective Schottky barrier height (SBH). Enhanced Schottky barriers form a double barrier potential well along the channel that leads to resonant tunneling and alters the normal operation of the SBFET. Major factors that may lead to resonant tunneling are investigated. Resonant tunneling occurs at low temperatures and low drain voltages, and gradually diminishes as the channel thickness and the gate length scale down. Accordingly, the GaAs (100) SBFET has poor ballistic performance in nanoscale regime.

  9. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

    NASA Astrophysics Data System (ADS)

    Spicer, W. E.; Cao, R.; Miyano, K.; Kendelewicz, T.; Lindau, I.; Weber, E.; Liliental-Weber, Z.; Newman, N.

    1990-01-01

    Through the use of synchrotron radiation photoemission spectroscopy (PES) and related techniques, we have gained detailed knowledge of Fermi level pinning, interfacial chemistry and disruption of GaAs for coverages up to several monolayers (ML). A link has been made between these data and that in the thick layer regime (hundreds of ML), which characterizes practical Schottky diodes. PES results for thin layers deposited at room temperature (RT) and low temperatures of about 80 K (LT) as well as thick films deposited at RT and annealed to higher temperatures are considered. At LT where GaAs disruption is minimized for thin films, metal-induced gap states seem to dominate the Fermi level pinning process except where GaAs metal reactions are strong. For RT thin and thick films, the effects of defects must be considered, and the advanced unified defect model (AUDM) is applied. In the AUDM the key defects are identified as the AsGa (double donor with levels at 0.75 and 0.5 eV above the valence band maximum) and the GaAs antisite (double acceptor) with the AsGa normally dominating due to the excess As which characterizes LEC GaAs crystals. The literature is reviewed and a number of phenomena are explained in terms of this model including the Fermi level position on MBE grown GaAs observed by Svensson et al. and the anomolously high Schottky barrier height (SBH) of thick Ga on n-GaAs observed by several groups. By performing electrical, TEM, and chemical studies of thick diodes and by evaluating the changes upon thermal annealing of diodes it is found that the AUDM successfully predicts the increase or decrease of barrier height on annealing.

  10. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

    NASA Astrophysics Data System (ADS)

    Spicer, W. E.; Cao, R.; Miyano, K.; Kendelewicz, T.; Lindau, I.; Weber, E.; Liliental-Weber, Z.; Newman, N.

    1989-11-01

    Through the use of synchrotron radiation photoemission spectroscopy (PES) and related techniques, we have gained detailed knowledge of Fermi level pinning, interfacial chemistry and disruption of GaAs for coverages up to several monolayers (ML). A link has been made between these data and that in the thick layer regime (hundreds of ML), which characterizes practical Schottky diodes. PES results for thin layers deposited at room temperature (RT) and low temperatures of about 80 K (LT) as well as thick films deposited at RT and annealed to higher temperatures are considered. At LT where GaAs disruption is minimized for thin films, metal-induced gap states seem to dominate the Fermi level pinning process except where GaAs metal reactions are strong. For RT thin and thick films, the effects of defects must be considered, and the advanced unified defect model (AUDM) is applied. In the AUDM the key defects are identified as the As Ga (double donor with levels at 0.75 and 0.5 eV above the valence band maximum) and the Ga As antisite (double acceptor) with the As Ga normally dominating due to the excess As which characterizes LEC GaAs crystals. The literature is reviewed and a number of phenomena are explained in terms of this model including the Fermi level position on MBE grown GaAs observed by Svensson et al. and the anomolously high Schottky barrier height (SBH) of thick Ga on n-GaAs observed by several groups. By performing electrical, TEM, and chemical studies of thick diodes and by evaluating the changes upon thermal annealing of diodes it is found that the AUDM successfully predicts the increase or decrease of barrier height on annealing.

  11. Circuit Compatible Model for Electrostatic Doped Schottky Barrier CNTFET

    NASA Astrophysics Data System (ADS)

    Singh, Amandeep; Khosla, Mamta; Raj, Balwinder

    2016-10-01

    This paper proposes a circuit compatible model for electrostatic doped Schottky barrier carbon nanotube field effect transistor (ED-SBCNTFET). The proposed model is an extension of the Schottky barrier carbon nanotube field effect transistor (SBCNTFET) to ED-SBCNTFET by adding polarity gates, which are used to create electrostatic doping. In ED-SBCNTFET, electrostatic doping is responsible for a fermi level shift of source and drain regions. A mathematical relation has been developed between fermi level shift and polarity gate bias. Both current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics have been efficiently modeled. The results are compared with the reported semi-classical model and simulations from NanoTCAD ViDES for validation. The proposed model is much faster than numerical models as it denies self consistent equations. Finally, circuit application is demonstrated by simulating inverter using the proposed model in HSPICE.

  12. Circuit Compatible Model for Electrostatic Doped Schottky Barrier CNTFET

    NASA Astrophysics Data System (ADS)

    Singh, Amandeep; Khosla, Mamta; Raj, Balwinder

    2016-06-01

    This paper proposes a circuit compatible model for electrostatic doped Schottky barrier carbon nanotube field effect transistor (ED-SBCNTFET). The proposed model is an extension of the Schottky barrier carbon nanotube field effect transistor (SBCNTFET) to ED-SBCNTFET by adding polarity gates, which are used to create electrostatic doping. In ED-SBCNTFET, electrostatic doping is responsible for a fermi level shift of source and drain regions. A mathematical relation has been developed between fermi level shift and polarity gate bias. Both current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been efficiently modeled. The results are compared with the reported semi-classical model and simulations from NanoTCAD ViDES for validation. The proposed model is much faster than numerical models as it denies self consistent equations. Finally, circuit application is demonstrated by simulating inverter using the proposed model in HSPICE.

  13. On the electrical characteristics of Au/n-type GaAs Schottky diode

    NASA Astrophysics Data System (ADS)

    Mamor, M.; Bouziane, K.; Tirbiyine, A.; Alhamrashdi, H.

    2014-08-01

    The temperature dependence of the electrical properties of Au/n-type GaAs Schottky contacts have been studied using current-voltage (I-V) and capacitance-voltage (C-V) over a wide temperature range 100-300 K. In the low temperature range 100-140 K, the absence of temperature dependent tunneling parameters has been explained in terms of thermionic field emission. In the high temperature range 140-300 K, the zero-bias barrier height (Φ0bn) was found to decrease and the ideality factor (n) to increase with decreasing temperature. This abnormal temperature dependence of Φ0bn and n is interpreted on the basis of a thermionic emission mechanism by considering the existence of the barrier height inhomogeneities (BHi) at the metal/GaAs interface. From the linear plot of the experimental Schottky barrier height (SBH) vs. 1/T based on the BHi model, the value of the homogeneous SBH (Φ‾0bn) of 1.03 eV and a zero-bias standard deviation (σ0s) of 89 meV were computed. Furthermore the modified Richardson plot according to the Gaussian distribution model resulted in a homogeneous SBH (Φ‾0bn) of 1.02 eV and a Richardson constant (A*) of 7.97 A/cm2 K2, respectively. The value of A* obtained from this plot is in very close agreement with the theoretical reported value of 8.16 A/cm2 K2 for n-type GaAs.

  14. Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layers

    SciTech Connect

    Platen, W.; Schmutzler, H.; Kohl, D.; Brauchle, K.; Wolter, K.

    1988-07-01

    GaAs(110) faces with different preparations: ultrahigh vacuum (UHV) cleaved, polished and etched, polished and sputtered: are prepared as Schottky diodes by the deposition of Ag. Diodes based on UHV-cleaved faces do show homogeneously distributed EL2 and EL5 states in deep level transient spectroscopy (DLTS). On polished and etched samples an additional interface state (IS) distribution with a density of 9 x 10/sup 11/ eV/sup -1/ cm/sup -2/ at the DLTS maximum appears. These states can be caused by defects at the oxidic interfacial layer. Polishing and sputtering also evokes the IS distribution. The absence of a DLTS signal from metal-induced gap states (MIGS) which pin the Fermi level at 0.49 eV above the valence-band maximum is related to the absence of an interfacial layer in the UHV prepared Schottky diodes. The sputter process increases the electron density in a thin layer below the interface by an As excess. The corresponding smaller extent of the barrier causes an additional electron emission via tunneling processes from the IS distribution. Furthermore, a near-interface state, EL6 (V/sub Ga/-V/sub As/), shows up. Its concentration at the interface attains N/sub EL6/ = 2.5 x 10/sup 16/ cm/sup -3/ comparable to the shallow donor concentration.

  15. Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layers

    NASA Astrophysics Data System (ADS)

    Platen, W.; Schmutzler, H.-J.; Kohl, D.; Brauchle, K.-A.; Wolter, K.

    1988-07-01

    GaAs(110) faces with different preparations—ultrahigh vacuum (UHV) cleaved, polished and etched, polished and sputtered—are prepared as Schottky diodes by the deposition of Ag. Diodes based on UHV-cleaved faces do show homogeneously distributed EL2 and EL5 states in deep level transient spectroscopy (DLTS). On polished and etched samples an additional interface state (IS) distribution with a density of 9×1011 eV-1 cm-2 at the DLTS maximum appears. These states can be caused by defects at the oxidic interfacial layer. Polishing and sputtering also evokes the IS distribution. The absence of a DLTS signal from metal-induced gap states (MIGS) which pin the Fermi level at 0.49 eV above the valence-band maximum is related to the absence of an interfacial layer in the UHV prepared Schottky diodes. The sputter process increases the electron density in a thin layer below the interface by an As excess. The corresponding smaller extent of the barrier causes an additional electron emission via tunneling processes from the IS distribution. Furthermore, a near-interface state, EL6 (VGa-VAs), shows up. Its concentration at the interface attains NEL6 =2.5×1016 cm-3 comparable to the shallow donor concentration.

  16. Detection Properties of Thin-Film Slot-Antenna-Coupled GaAs Schottky Barrier Diodes

    NASA Astrophysics Data System (ADS)

    Hayashi, Kosuke; Tachiki, Takashi; Uchida, Takashi; Furuya, Takashi; Idehara, Toshitaka; Yasuoka, Yoshizumi

    2009-08-01

    GaAs Schottky barrier diodes (SBDs) coupled with a thin-film slot antenna were fabricated using a microfabrication technique, and video detection and mixing properties were investigated at 94 GHz. In the video detection, the bias voltage dependence of detected voltage showed almost the same variation with the calculated value derived from the theory of square-law detection. It was confirmed that detected voltage was obtained from the nonlinearity of the current-voltage (I-V) characteristic of the device. A Si extended hemispherical lens was coupled to the device to improve device responsivity. The increase in detected voltage was 22.2 dB upon using a lens with a radius of 10 mm, and a noise equivalent irradiance (NEI) of 1.2×10-10 W/(cm2·Hz1/2) was obtained. In the mixing, IF signals were observed up to a harmonic number of 7 using the thin-film GaAs SBD.

  17. Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs /Alx Ga1-x As heterostructure

    NASA Astrophysics Data System (ADS)

    Shen, Li-Hua; Zhang, Gui-Lian; Yang, Duan-Chui

    2016-09-01

    We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs /Alx Ga1-x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device.

  18. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  19. Cumulant Analysis of Detection of Random Process Using a Schottky Diode with δ-DOPING

    NASA Astrophysics Data System (ADS)

    Klyuev, A. V.

    2013-05-01

    We present the results of cumulant analysis for detection of random process using a Schottky diode with δ-doping. The statistical characteristics of the output process of the detector, based on a Schottky diode with δ-doping, are investigated. We discuss noninertial and inertial detection mode. It was shown that at a relatively large dispersion of the input noise a noninertial detection mode occurs.

  20. The effect of oscillation amplitudes on the noise of IMPATT-diode oscillators with uniformly doped GaAs

    NASA Astrophysics Data System (ADS)

    Kornilov, S. A.; Pavlov, V. M.

    Experimental results are presented concerning the effect of load conditions on the spectral densities of fluctuations of the oscillation amplitude and frequency of uniformly doped GaAs Schottky-barrier IMPATT diode oscillators. It is shown that at frequencies of the order of hundreds of Hz to several MHz (where avalanche noise occurs) the character of the dependence of noise levels on oscillation amplitude is determined by the ratio of operating current to nominal current. This dependence becomes very sharp when the operator current approaches the nominal current.

  1. Measurement of Radiation Frequency of Gyrotron by GaAs Schottky Barrier Diodes Coupled with Thin-Film Slot Antenna

    NASA Astrophysics Data System (ADS)

    Hayashi, Kosuke; Furuya, Takashi; Tachiki, Takashi; Uchida, Takashi; Idehara, Toshitaka; Yasuoka, Yoshizumi

    2010-03-01

    Thin-film slot-antenna-coupled GaAs Schottky barrier diodes (SBDs) used at the 180 GHz band were fabricated by microfabrication techniques, and the radiation frequency of a gyrotron at the University of Fukui (Gyrotron FU CW IV) was measured. In second-harmonic mixing using a local oscillator (LO) wave of 88.0899 GHz, an intermediate frequency (IF) signal of 102.8 MHz was observed and the radiation frequency of the gyrotron was found to be 176.077 GHz.

  2. Characterization of damage on GaAs in a reactive ion beam etching system using Schottky diodes

    SciTech Connect

    Sugata, S.; Asakawa, K.

    1988-05-01

    Chlorine (Cl/sub 2/) reactive ion beam etching (RIBE)-induced damage on the GaAs wafer has been characterized by studing the characteristics of Schottky diodes fabricated on the etched surfaces. The ideality factors and the Schottky barrier heights measured by the current--voltage characteristics for ion extraction voltage range from 30 to 200 V at Cl/sub 2/ gas pressure of 2 x 10/sup -3/ Torr and are comparable to those of the reference sample cleaned by HCl. Both the n value and the barrier height degrade for ion extraction voltage of more than 300 V. For higher Cl/sub 2/ gas pressure, the damage on the etched surface is less. These results suggest that with the low-energy ions and high-Cl/sub 2/ gas pressure, the damage of the GaAs surface is reduced significantly. The electron deep levels induced by RIBE disappear after annealing at 400 /sup 0/C for 10 min.

  3. Semi-insulating GaAs and Au Schottky barrier photodetectors for near-infrared detection (1280 nm)

    NASA Astrophysics Data System (ADS)

    Nusir, A. I.; Makableh, Y. F.; Manasreh, O.

    2015-08-01

    Schottky barriers formed between metal (Au) and semiconductor (GaAs) can be used to detect photons with energy lower than the bandgap of the semiconductor. In this study, photodetectors based on Schottky barriers were fabricated and characterized for the detection of light at wavelength of 1280 nm. The device structure consists of three gold fingers with 1.75 mm long and separated by 0.95 mm, creating an E shape while the middle finger is disconnected from the outer frame. When the device is biased, electric field is stretched between the middle finger and the two outermost electrodes. The device was characterized by measuring the current-voltage (I-V) curve at room temperature. This showed low dark current on the order of 10-10 A, while the photocurrent was higher than the dark current by four orders of magnitude. The detectivity of the device at room temperature was extracted from the I-V curve and estimated to be on the order of 5.3x1010 cm.Hz0.5/W at 5 V. The step response of the device was measured from time-resolved photocurrent curve at 5 V bias with multiple on/off cycles. From which the average recovery time was estimated to be 0.63 second when the photocurrent decreases by four orders of magnitude, and the average rise time was measured to be 0.897 second. Furthermore, the spectral response spectrum of the device exhibits a strong peak close to the optical communication wavelength (~1.3 μm), which is attributed to the internal photoemission of electrons above the Schottky barrier formed between Au and GaAs.

  4. Phase interaction in GaAs contacts with group I metals and its relationship to the degradation of structures with a schottky barrier

    SciTech Connect

    Bozhkov, V.G.; Ivonin, I.V.; Soldatenko, K.V.; Yakbenya, M.P.

    1986-03-01

    This paper uses the methods of Rutherford back scattering of helium ions and x-ray diffraction and electron microscope analysis to study phase interaction in GaAs contacts with layers of group I metals (Cu, Ag, Au) with annealings in a hydrogen atmosphere. The nature of the interactions and the mechanisms of degradation of the volt-ampere characteristics of Schottky barrier diodes are discussed.

  5. Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic- Semiconductor-Based Schottky Diodes

    NASA Astrophysics Data System (ADS)

    Singh, Budhi; Ghosh, Subhasis

    2015-08-01

    Highly conducting and transparent Ga-doped ZnO (GZO) thin films have been grown on transparent substrates at different growth temperatures with Ga content varying from 0.01% to 10%. All films showed pronounced c-axis orientation corresponding to hexagonal wurtzite structure. The minimum resistivity of 4.3 × 10-4 Ω cm was reproducibly obtained in GZO thin film doped with 2% Ga and grown at 600°C. We have further shown that highly conducting transparent GZO thin film can be used as a Schottky contact in copper phthalocyanine (CuPc)-based Schottky diodes. The capacitance-voltage characteristics of the Al/CuPc/Au and GZO/CuPc/Au Schottky diodes show similar built-in potential ( V bi) of 0.98 V, which is close to the difference in work function between Au (5.2 eV) and Al or GZO (4.2 eV), establishing that GZO behaves as a metal electrode with work function similar to Al. Similar values of acceptor concentration (˜1015 cm-3) in CuPc were obtained from the capacitance-voltage characteristics of the Al/CuPc/Au and GZO/CuPc/Au Schottky diodes. These observations indicate the absence of interface states at the metal/organic interface in CuPc-based Schottky diodes.

  6. Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

    SciTech Connect

    Casadei, Alberto; Heiss, Martin; Colombo, Carlo; Ruelle, Thibaud; Fontcuberta i Morral, Anna; Krogstrup, Peter; Roehr, Jason A.; Upadhyay, Shivendra; Sorensen, Claus B.; Nygard, Jesper

    2013-01-07

    The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also show that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires.

  7. Single Schottky junction FETs based on Si:P nanowires with axially graded doping

    NASA Astrophysics Data System (ADS)

    Barreda, Jorge; Keiper, Timothy; Zhang, Mei; Xiong, Peng

    2015-03-01

    Si nanowires (NWs) with a systematic axial increase in phosphorus doping have been synthesized via a vapor-liquid-solid method. Silane and phosphine precursor gases are utilized for the growth and doping, respectively. The phosphorous doping profile is controlled by the flow ratio of the precursor gases. After the as-grown product is ultrasonically agitated into a solution, the Si NWs are dispersed on a SiO2 substrate with a highly doped Si back gate. Individual NWs are identified for the fabrication of field-effect transistors (FETs) with multiple Cr/Ag contacts along the NW. Two-probe and four-probe measurements are taken systematically under vacuum conditions at room temperature and the contribution from each contact and each NW section between adjacent contacts is determined. The graded doping level, produced by a systematic reduction in dopant density along the length of the NWs, is manifested in the regular increases in the channel and contact resistances. Our Si NWs facilitate the fabrication of asymmetric FETs with one ohmic and one Schottky contact. A significant increase in gate modulation is obtained due to the single Schottky-barrier contact. Characterization details and the applicability for sensing purposes will be discussed.

  8. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    SciTech Connect

    Čermák, Jan Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

    2014-02-07

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  9. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

    2011-12-01

    In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations N D of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

  10. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

    PubMed

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

    2011-12-01

    In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

  11. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET

    NASA Astrophysics Data System (ADS)

    Singh, Sangeeta; Sinha, Ruchir; Kondekar, P. N.

    2016-05-01

    In this paper, an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. It consists of axial nanowire heterostructure (silicide-intrinsic silicon-silicide) with three independent all-around gates, two gates are polarity control gates for dynamically reconfiguring the device polarity by modulating the effective Schottky barrier heights and a control gate switches the device ON and OFF. The most interesting features of the proposed structure are simplified fabrication process as the state-of-the-art for ion implantation and high thermal budget no more required for annealing. It is highly immune to process variations, doping control issues and random dopant fluctuations (RDF) and there are no mobility degradation issues related to high doping. A calibrated 3-D TCAD simulation results exhibit the SS of 2 mV/dec for n-type E-SiNW-SB-FET and 9 mV/dec for p-type E-SiNW-SB-FET for about five decades of current. Further, it resolves all the reliability related issues of IMOS as hot electron effects are no more limiting our device performance. It offers significant drive current of the order of 10-5-10-4 A and magnificently high ION/IOFF ratio of ∼108 along with the inherent advantages of symmetric device structure for its circuit realization.

  12. Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors.

    PubMed

    Chen, Yung-Fu; Fuhrer, Michael S

    2006-09-01

    Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.

  13. Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

    NASA Technical Reports Server (NTRS)

    Schlecht, E.; Maiwald, F.; Chattopadhyay, G.; Martin, S.; Mehdi, I.

    2001-01-01

    Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

  14. Doping-free fabrication of silicon thin films for schottky solar cell.

    PubMed

    Yun, Ju-Hyung; Park, Yun Chang; Yi, Junsin; Woo, Chang Su; Kim, Joondong

    2012-02-01

    Thin film Schottky solar cells were fabricated without doping processes, which may provide an alternative approach to the conventional thin film solar cells in the n-i-p configuration. A thin Co layer was coated on a substrate, which worked as a back contact metal and then Si film was grown above it. Deposition condition may modulate the Si film structure to be a fully amorphous Si (a-Si) or a mixing of microcrystalline Si (mc-Si) and a-Si. A thin Au layer was deposited above the grown Si films, which formed a Schottky junction. Two types of Schottky solar cells were prepared on a fully a-Si film and a mixing of mc-Si and a-Si film. Under one sun illumination, the mixing of mc-Si and a-Si device provided 35% and 68.4% enhancement in the open circuit voltage and fill factor compared to that of the amorphous device.

  15. Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

    SciTech Connect

    Barba, D.; Aimez, V.; Beauvais, J.; Beerens, J.; Drouin, D.; Chicoine, M.; Schiettekatte, F.

    2004-11-01

    Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the As outgassing mechanism and the disordering effects induced by ion implantation in Zn-doped GaAs with nominal doping level p=7x10{sup 18} cm{sup -3}. The relative intensity of these two peaks is measured right after rapid vacuum thermal annealings (RVTA) between 200 and 450 deg. C, or after ion implantations carried out at energies of 40 keV with P{sup +}, and at 90 and 170 keV with As{sup +}. These intensities provide information regarding the Schottky barrier formation near the sample surface. Namely, the Raman signature of the depletion layer formation resulting from As desorption is clearly observed in samples submitted to RVTA above 300 deg. C, and the depletion layer depths measured in ion implanted GaAs:Zn are consistent with the damage profiles obtained through Monte Carlo simulations. Ion channeling effects, maximized for a tilt angle set to 45 deg. during implantation, are also investigated. These results show that the Raman spectroscopy is a versatile tool to study the defects induced by postgrowth processes in multilayered heterostructures, with probing range of about 100 nm in GaAs-based materials.

  16. Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Yang, Fangfang; Messing, Maria E.; Mergenthaler, Kilian; Pistol, Mats-Erik; Deppert, Knut; Samuelson, Lars; Magnusson, Martin H.; Yartsev, Arkady

    2016-11-01

    In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.

  17. Te-doping of self-catalyzed GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Suomalainen, S.; Hakkarainen, T. V.; Salminen, T.; Koskinen, R.; Honkanen, M.; Luna, E.; Guina, Mircea

    2015-07-01

    Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy and high-resolution transmission electron microscopy. The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the {111}-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.

  18. Te-doping of self-catalyzed GaAs nanowires

    SciTech Connect

    Suomalainen, S. Hakkarainen, T. V.; Salminen, T.; Koskinen, R.; Guina, Mircea; Honkanen, M.; Luna, E.

    2015-07-06

    Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy and high-resolution transmission electron microscopy. The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the (111)-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.

  19. Inversion of spin dependent photocurrent at Fe3O4/modulation doped GaAs heterointerfaces

    NASA Astrophysics Data System (ADS)

    Shirahata, Y.; Wada, E.; Itoh, M.; Taniyama, T.

    2011-04-01

    We demonstrate inversion of the spin dependent photocurrent across an Fe3O4/modulation doped GaAs interface under optical spin orientation condition. The spin dependent photocurrent for fully epitaxial Fe3O4/GaAs and Fe/GaAs interfaces clearly show the opposite magnetic field dependence, where the spin filtering efficiency for the Fe3O4/GaAs decreases with increasing magnetic field. The results clearly indicate that the spin polarization of the Fe3O4 layer has the opposite sign to that of Fe at the Fermi energy, consistent with theoretical predictions, and the result is a consequence of the atomically flat Fe3O4/GaAs interface we obtained.

  20. Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

    NASA Astrophysics Data System (ADS)

    Haris, Norshakila; Kyabaggu, Peter B. K.; Rezazadeh, Ali A.

    2016-07-01

    A microwave receiver protection limiter circuit has been designed, fabricated and tested using vertically stacked GaAs MMIC technology. The limiter circuit with a dimension of 2.5 × 1.3 mm2 is formed by using double-channel AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) Schottky diodes integrated with a low-loss V-shaped coplanar waveguide multilayer structure. The electrical parameter characteristics of the pHEMT Schottky diodes are presented including the C–V profile showing the presence of a double channel in the device layer structure. This unique feature can also be seen from the double-peak responses of the electron density as a function of the device layer width, which represent the high electron concentration at two different 2-DEG layers of the structure. An equivalent circuit model of pHEMT Schottky diodes is demonstrated showing good agreement with the measurement results. At zero-bias condition, the devices show high performance in diode detector applications with voltage sensitivities of more than 89 mV μW‑1 at 10 GHz and at least 5.4 mV μW‑1 at 35 GHz. The measurement results of the limiter circuit demonstrated the blocking of input power signals greater than 20 dBm input power at 3 GHz. To the best of our knowledge this is the first demonstration of the use of pHEMT Schottky diodes in microwave power limiter applications.

  1. Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

    NASA Astrophysics Data System (ADS)

    Haris, Norshakila; Kyabaggu, Peter B. K.; Rezazadeh, Ali A.

    2016-07-01

    A microwave receiver protection limiter circuit has been designed, fabricated and tested using vertically stacked GaAs MMIC technology. The limiter circuit with a dimension of 2.5 × 1.3 mm2 is formed by using double-channel AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) Schottky diodes integrated with a low-loss V-shaped coplanar waveguide multilayer structure. The electrical parameter characteristics of the pHEMT Schottky diodes are presented including the C-V profile showing the presence of a double channel in the device layer structure. This unique feature can also be seen from the double-peak responses of the electron density as a function of the device layer width, which represent the high electron concentration at two different 2-DEG layers of the structure. An equivalent circuit model of pHEMT Schottky diodes is demonstrated showing good agreement with the measurement results. At zero-bias condition, the devices show high performance in diode detector applications with voltage sensitivities of more than 89 mV μW-1 at 10 GHz and at least 5.4 mV μW-1 at 35 GHz. The measurement results of the limiter circuit demonstrated the blocking of input power signals greater than 20 dBm input power at 3 GHz. To the best of our knowledge this is the first demonstration of the use of pHEMT Schottky diodes in microwave power limiter applications.

  2. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

    2014-03-01

    We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4A2(4F) → 4T1(4G) and 4T1(4G) → 6A1(6S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs.

  3. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber.

    PubMed

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-06-16

    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.

  4. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber.

    PubMed

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-06-16

    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers. PMID:24977576

  5. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  6. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    PubMed

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

  7. On magnetism and the insulator-to-metal transition in p-doped GaAs

    NASA Astrophysics Data System (ADS)

    Chapler, Brian; Myers, R. C.; Mack, S.; Frenzel, A.; Pursley, B. C.; Burch, K. S.; Singley, E. J.; Dattelbaum, A. M.; Samarth, N.; Awschalom, D. D.; Basov, D. N.

    2011-03-01

    Although Ga 1-x Mn x As is often described as the prototypical ferromagnetic semiconductor, many aspects of the electronic structure and nature of mediating carriers remain open. A central question in this regard is whether the insulator-to-metal transition (IMT) in p -doped GaAs is significantly modified when dopants are magnetic. We address this through an infrared spectroscopic study of GaAs doped with either non-magnetic Be or magnetic Mn acceptors. Through our comparison, we are able to isolate effects of magnetic dopants in GaAs from those associated with disorder and proximity to the IMT. Here we show Mn-doped samples exhibit an unusual electronic transport regime, combining elements of both metallic and insulating behavior, at doping concentrations far beyond the onset of the IMT. Be-doped films however, reveal genuine metallicity just above the IMT boundary. These results underscore the pivotal role of magnetism in transport and optical phenomena of Ga 1-x Mn x As.

  8. Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In-doped substrates

    NASA Astrophysics Data System (ADS)

    Imai, Tetsuji; Fuke, Shunro; Mori, Katsumi; Kuwahara, Kazuhiro

    1989-02-01

    Undoped and Zn-doped (˜3×1020/cm3) GaAs epilayers are grown on In-doped (order of 1020/cm3) GaAs substrates by the organometallic vapor phase epitaxy method. By thermal annealing of the undoped epilayer, changes in the perpendicular lattice constant a⊥, together with the apparent changes in surface morphology such as the appearance of a cross-hatched structure or a narrowing of the cross-hatched line spacing, are observed. It is also found that Zn doping is very effective to obtain thick, coherently grown epilayers on In-doped GaAs substrates. No appreciable changes in a⊥ and no generation of misfit dislocations are found because of the hardening of the crystalline lattice, similar to the case of In doping to GaAs bulk crystals.

  9. An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Thomas, B.; Gill, J.; Maestrini, A.; Lee, C.; Lin, R.; Sin, S.; Peralta, A.; Mehdi, I.

    2011-01-01

    We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW

  10. An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Thomas, B.; Gill, J.; Maestrini, A.; Lee, C.; Lin, R.; Sin, S.; Peralta, A.; Mehdi, I.

    2010-01-01

    We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

  11. Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Arab, Shermin; Yao, Maoqing; Zhou, Chongwu; Daniel Dapkus, P.; Cronin, Stephen B.

    2016-05-01

    In this letter, the photoluminescence spectra of n-type doped GaAs nanowires, grown by the metal organic chemical vapor deposition method, are measured at 4 K and 77 K. Our measurements indicate that an increase in carrier concentration leads to an increase in the complexity of the doping mechanism, which we attribute to the formation of different recombination centers. At high carrier concentrations, we observe a blueshift of the effective band gap energies by up to 25 meV due to the Burstein-Moss shift. Based on the full width at half maximum (FWHM) of the photoluminescence peaks, we estimate the carrier concentrations for these nanowires, which varies from 6 × 1017 cm-3 (lightly doped), to 1.5 × 1018 cm-3 (moderately doped), to 3.5 × 1018 cm-3 (heavily doped) as the partial pressure of the disilane is varied from 0.01 sccm to 1 sccm during the growth process. We find that the growth temperature variation does not affect the radiative recombination mechanism; however, it does lead to a slight enhancement in the optical emission intensities. For GaAs nanowire arrays measured at room temperature, we observe the same general dependence of band gap, FWHM, and carrier concentration on doping.

  12. Local electronic structure and magnetic properties of 3d transition metal doped GaAs

    NASA Astrophysics Data System (ADS)

    Lin, He; Duan, Haiming

    2008-05-01

    The local electronic structure and magnetic properties of GaAs doped with 3d transition metal (Sc, Ti, V, Cr, Mn, Fe, Co, Ni) were studied by using discrete variational method (DVM) based on density functional theory. The calculated result indicated that the magnetic moment of transition metal increases first and then decreases, and reaches the maximum value when Mn is doped into GaAs. In the case of Mn concentration of 1.4%, the magnetic moment of Mn is in good agreement with the experimental result. The coupling between impure atoms in the system with two impure atoms was found to have obvious variation. For different transition metal, the coupling between the impure atom and the nearest neighbor As also has different variation.

  13. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    NASA Astrophysics Data System (ADS)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2016-08-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  14. Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Srnanek, R.; Kinder, R.; Sciana, B.; Radziewicz, D.; McPhail, D. S.; Littlewood, S. D.; Novotny, I.

    2001-06-01

    A method for determination of doping concentration profiles of GaAs multilayer structures on a bevelled surface by Raman spectroscopy is presented. By scanning the laser beam along the bevel we obtained micro-Raman spectra in different depth positions in the structure. Calculated ITO/ ILO intensities determine the doping concentration in these points for values above 3×10 16 cm -3. The results are compared with electrochemical capacitance-voltage technique and secondary ion mass spectrometry. Some specific problems are discussed.

  15. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

    NASA Technical Reports Server (NTRS)

    Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

    1988-01-01

    Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

  16. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  17. Passive Q-switching with GaAs or Bi-doped GaAs saturable absorber in Tm:LuAG laser operating at 2μm wavelength.

    PubMed

    Wu, Lin; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Wang, Reng; Liu, Ji

    2015-06-15

    We report the first demonstration of a diode pumped passively Q-switched Tm:LuAG laser near 2μm wavelength with Bi-doped or undoped GaAs wafer as saturable absorber. For Bi-doped GaAs saturable absorber, stable Q-switched pulses with duration of 63.3ns under a repetition rate of 132.7 kHz and pulse energy of 5.51μJ are generated. In comparison to the passively Q-switched laser with undoped GaAs saturable absorber, the laser with Bi-doped GaAs can produce shorter pulses and higher peak power at almost the same incident pump power. The results suggest that Bi-doped GaAs can be an attractive candidate of saturable absorber for Q-switched laser near 2μm wavelength.

  18. High efficiency Schottky junction solar cells by co-doping of graphene with gold nanoparticles and nitric acid

    NASA Astrophysics Data System (ADS)

    Liu, X.; Zhang, X. W.; Meng, J. H.; Yin, Z. G.; Zhang, L. Q.; Wang, H. L.; Wu, J. L.

    2015-06-01

    We have reported an effective method to enhance the efficiency of graphene-on-Si (Gr/Si) Schottky junction solar cells by co-doping of graphene with Au nanoparticles (NPs) and HNO3. Both Au NPs decoration and HNO3 treatment lead to p-type doping of graphene, and their combination is confirmed to be a more effective approach for achieving the higher work function and enhanced electrical conductivity of graphene. Consequently, the power conversion efficiency of Gr/Si solar cells is increased by 2.6 times, with a maximum value of 10.20%. This work suggests that the co-doping might be a promising way to realize high performance Gr/Si solar cells.

  19. Effects of gold diffusion on n-type doping of GaAs nanowires.

    PubMed

    Tambe, Michael J; Ren, Shenqiang; Gradecak, Silvija

    2010-11-10

    The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

  20. Elimination of DX centerlike behavior of donors in heavily doped GaAs

    NASA Astrophysics Data System (ADS)

    Suski, T.; Wisniewski, P.; Skierbiszewski, C.; Dmowski, L. H.; van der Wel, P. J.; Singleton, J.; Giling, L. J.; Harris, J. J.

    1991-03-01

    The pressure dependencies of the electrical conductivity, Hall coefficient, and Shubnikov-de-Haas effect have been studied for n-GaAs heavily doped with Sn and Te. The results demonstrate that the energy level related to the DX centers formed by these donors is resonant and degenerate with the conduction band of GaAs. The energy separation of the GaAs conduction-band minimum and the DX center (EDX) for the Sn donor has been found to be similar to those of the Si- and S-related DX centers (around 0.3 eV at T≊100 K), whereas EDX(Te) is much greater, at around 0.55 eV. An analysis of the sample recovery after pressure-induced freezeout of electrons onto the DX centers has enabled the energy barrier for electron emission from the Sn-related DX center to the conduction band and the barrier for electron capture by the DX center, the inverse process, to be determined. Both energy barriers are very small compared to those associated with Si- and S-donor-induced DX centers. The values for EDX (for Sn and Te) and the barrier sizes (for Sn) measured in this work for donors in GaAs are found to be rather different than the equivalent energies in (Ga,Al)As, and this difference is interpreted as evidence that the local vicinity of the DX center (Ga only or Al/Ga) strongly influences its properties. Finally, these results have led to the proposal of Te as the most effective dopant from the point of view of elimination of the DX centerlike properties of donors in heavily doped GaAs.

  1. Wavelength dependent negative and positive persistent photoconductivity in Sn δ-doped GaAs structures

    NASA Astrophysics Data System (ADS)

    Kulbachinskii, V. A.; Kytin, V. G.; Golikov, A. V.; Lunin, R. A.; van Schaijk, R. T. F.; de Visser, A.; Senichkin, A. P.; Bugaev, A. S.

    2000-09-01

    The photoconductivity of GaAs structures δ-doped by Sn has been investigated for wavelengths λ = 650-1200 nm in the temperature interval T = 4.2-300 K. The electron densities and mobilities, before and after illumination, have been determined by magnetoresistance, Shubnikov-de Haas effect and Hall effect measurements, in high magnetic fields. For the heavily doped structures (Hall density nH>2×1013 cm-2) we observe under illumination by light with wavelengths larger than the bandgap wavelength of the host material (λ = 815 nm at T = 4.2 K) first positive (PPPC) and then negative (NPPC) persistent photoconductivity. The NPPC is attributed to the ionization of DX centres and PPPC is explained by the excitation of electrons from Cr impurity states in the substrate. For λ<815 nm, in addition, the excitation of electrons over the bandgap of GaAs contributes to the PPPC. For the lightly doped structures (nH≤2×1013 cm-2) the photoconductivity effect is always positive.

  2. Van der Waals heterostructure of phosphorene and graphene: tuning the Schottky barrier and doping by electrostatic gating.

    PubMed

    Padilha, J E; Fazzio, A; da Silva, Antônio J R

    2015-02-13

    In this Letter, we study the structural and electronic properties of single-layer and bilayer phosphorene with graphene. We show that both the properties of graphene and phosphorene are preserved in the composed heterostructure. We also show that via the application of a perpendicular electric field, it is possible to tune the position of the band structure of phosphorene with respect to that of graphene. This leads to control of the Schottky barrier height and doping of phosphorene, which are important features in the design of new devices based on van der Waals heterostructures.

  3. Indium-doped GaAs: Investigation of deep traps

    NASA Astrophysics Data System (ADS)

    Laurenti, J. P.; Wolter, K.; Roentgen, P.; Seibert, K.; Kurz, H.; Camassel, J.

    1989-03-01

    The effect of indium incorporation on the concentration of deep traps in a series of GaAs epitaxial layers has been investigated by performing quantitative photoluminescence (PL) and capacitance [deep-level transient spectroscopy (DLTS)] spectroscopic studies. All samples were epitaxial layers of n-type GaAs:In, grown by organometallic vapor-phase epitaxy (OMVPE) on liquid-encapsulated Czochralski (LEC) -grown GaAs:Cr substrates. The calibrated indium concentration ranged between 0 and 6.5×1019 atoms cm-3, which is about 0.3% in alloy composition. We have investigated (i) the bands associated with chromium in both the epitaxial layers and the original substrates; (ii) a large recombination band, associated with an unidentified (D-VGa) complex, at about 1.2 eV; and (iii) the DLTS signal associated with the well-known deep trap EL2. We find the following. First, there is a one-to-one correspondence between the PL intensity associated with Cr2+, at 0.84 eV, and the D-VGa signal at 1.2 eV. This is true for both the epitaxial layers and the original substrates and suggests identification of the unknown donor participating in the D-VGa complex as Cr4+. Second, we find all PL intensities to decrease with increasing indium concentration, while the concentration and depth profile of EL2 are not affected. In contrast to the near-band-edge PL intensity, which increased with increasing indium content, there is a drop by about 1 order of magnitude for all chromium-related features when going from indium-free to about 0.3% indium-rich sample. Moreover, there is a one-to-one correspondence between the increase in the near-band-edge PL intensity and the decrease in the chromium-related signals. This establishes, on a fully experimental basis, the relative roles played by indium and chromium in our epitaxial samples: both compete to incorporate on gallium sites in the strain field of neighboring vacancies but, because of a higher incorporation rate, increasing the indium

  4. Controlled axial and radial Te-doping of GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Salehzadeh, O.; Kavanagh, K. L.; Watkins, S. P.

    2012-09-01

    Tellurium (Te)-doping of Au-catalyzed GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy (MOVPE) via the vapor-liquid-solid (VLS) mechanism is presented. Electrical measurements were performed inside a scanning electron microscope by contacting a tungsten nanoprobe to the Au end of individual NWs grown on a heavily n-type GaAs substrate. Rectifying current-voltage (I-V) characteristics are observed due to the formation of a junction at the Au nanoparticle (NP)/NW interface. The electron concentration ne and contact barrier heights, φ0b, were determined from the analyses of these characteristics. As expected, φ0b increased (from 0.63 ± 0.03 eV to 0.71 ± 0.02 eV) with decreasing Te-precursor flow rate, corresponding to a decrease in ne from (9 ± 1) × 1017 cm-3 to (1.5 ± 0.5) × 1017 cm-3. Meanwhile, undoped NWs had space-charge-limited characteristics. There was a large influence of the residual gallium (Ga) in the NP, on barrier properties, controlled by the group V precursor flow (on or off) during the cooling of the NW sample at the end of the growth process. With the group V flow off during cooling, a decrease in φ0b from 0.79 ± 0.04 eV to 0.63 ± 0.03 eV is observed consistent with a higher Ga alloy concentration in the NP, confirmed by energy dispersive spectroscopy measurements. We also demonstrate the fabrication of core/shell, undoped/Te-doped, GaAs NWs with very high Te doping (˜1019 cm-3).

  5. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

    SciTech Connect

    Özerli, Halil; Karteri, İbrahim; Karataş, Şükrü; Altindal, Şemsettin

    2014-05-01

    Highlights: • The electronic parameters of the diode under temperature were investigated. • The barrier heights have a Gaussian distribution. • Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280–415 K. The barrier height for the Au/n-type GaAs SBDs from the I–V and C–V characteristics have varied from 0.901 eV to 0.963 eV (I–V) and 1.234 eV to 0.967 eV (C–V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280–415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I{sub 0}/T{sup 2}) versus (kT){sup −1} and ln(I{sub 0}/T{sup 2}) versus (nkT){sup −1} plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A Φ{sub b0} versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ{sup ¯}{sub b0} = 1.071 eV and σ{sub 0} = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot.

  6. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  7. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    Baca, A.G.; Brown, D.J.; Donaldson, R.D.; Helgeson, W.D.; Hjalmarson, H.P.; Loubriel, G.M.; Mar, A.; O'Malley, M.W.; Thornton, R.L.; Zutavern, F.J.

    1999-08-05

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approximately}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  8. Large anomalous Hall resistance of pair {delta}-doped GaAs structures grown by molecular-beam epitaxy

    SciTech Connect

    Jung, D. W.; Noh, J. P.; Touhidul Islam, A. Z. M.; Otsuka, N.

    2008-02-15

    Beryllium/silicon pair {delta}-doped GaAs structures grown by molecular-beam epitaxy exhibit a Hall resistance which has a nonlinear dependence on the applied magnetic field and which is strongly correlated to the negative magnetoresistance observed under the applied magnetic field parallel to the {delta}-doped layers. Dependence of the occurrence of the nonlinear Hall resistance on the growth condition is investigated. A significantly large increase in both the magnitude and the nonlinearity of the Hall resistance is observed from samples whose GaAs buffer layers are grown under the condition of a low As/Ga flux ratio. Reflection high energy electron diffraction and electron microscope observations show that a faceted surface develops with the growth and postgrowth annealing of a GaAs buffer layer under the condition of a low As flux. From samples which have only Si {delta}-doped layers and exhibit the n-type conduction, such nonlinear Hall resistance is not observed. The nonlinearity of the Hall resistance of Be/Si pair {delta}-doped structures depends on the single parameter B/T, where B and T are the applied magnetic field and the temperature, respectively. Based on these results, it is suggested that the nonlinear Hall resistance of Be/Si pair {delta}-doped structures is the anomalous Hall effect caused by localized spins in {delta}-doped layers.

  9. Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

    SciTech Connect

    Shim, Seong Hoon; Kim, Hyung-jun; Koo, Hyun Cheol; Lee, Yun-Hi; Chang, Joonyeon

    2015-09-07

    We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

  10. Pressure-dependent studies of the DX centre in Si- and Sn-doped n +GaAs

    NASA Astrophysics Data System (ADS)

    Portal, J. C.; Maude, D. K.; Foster, T. J.; Eaves, L.; Dmowski, L.; Nathan, M.; Heiblum, M.; Harris, J. J.; Beall, R. B.; Simmonds, P. E.

    Shubnikov-de Haas and persistent photoconductivity measurements are used to study the effect of hydrostatic pressure on the free electron concentration, mobility, and the occupancy of the DX centre in MBE grown n +GaAs heavily doped with either Si or Sn. The results show that the DX centre produces a resonant donor level between the Γ- and L- conduction band minima at a concentration comparable with the doping level. The position and occupancy of the DX centre are calculated using Fermi-Dirac statistics. For the Si-doped samples comparison with local vibrational mode measurements indicate that the DX level can be identified with Si Ga.

  11. Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Burgess, Tim; Saxena, Dhruv; Mokkapati, Sudha; Li, Zhe; Hall, Christopher R.; Davis, Jeffrey A.; Wang, Yuda; Smith, Leigh M.; Fu, Lan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati

    2016-06-01

    Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications.

  12. Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

    PubMed Central

    Burgess, Tim; Saxena, Dhruv; Mokkapati, Sudha; Li, Zhe; Hall, Christopher R.; Davis, Jeffrey A.; Wang, Yuda; Smith, Leigh M.; Fu, Lan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati

    2016-01-01

    Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications. PMID:27311597

  13. Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires.

    PubMed

    Burgess, Tim; Saxena, Dhruv; Mokkapati, Sudha; Li, Zhe; Hall, Christopher R; Davis, Jeffrey A; Wang, Yuda; Smith, Leigh M; Fu, Lan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati

    2016-01-01

    Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications. PMID:27311597

  14. Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping

    NASA Astrophysics Data System (ADS)

    Koike, Masahiro; Kamimuta, Yuuichi; Tezuka, Tsutomu; Yamabe, Kikuo

    2016-09-01

    The electrical properties of Ge crystals and the effective Schottky barrier height (SBH) of NiGe/Ge diodes fabricated by P and/or chalcogen (S, Se, or Te) doping were investigated for Ge n-channel metal-oxide-semiconductor field-effect transistors with a NiGe/n+Ge junction. The electron concentration in Ge was increased more by co-doping with chalcogen and P than by doping with P alone. Moreover, SBH values were decreased in NiGe/nGe diodes and increased in NiGe/pGe diodes compared with undoped NiGe/Ge by both P doping and P and chalcogen co-doping. Co-doping with Te and P was most effective in modifying the SBH.

  15. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    SciTech Connect

    Liu, X.; Zhang, X. W. Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

    2014-11-03

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  16. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    NASA Astrophysics Data System (ADS)

    Liu, X.; Zhang, X. W.; Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L.

    2014-11-01

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  17. Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method.

    PubMed

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan; Şimşek, Veli

    2016-07-01

    A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000-3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297-302, 2016. © 2015 Wiley Periodicals, Inc.

  18. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    PubMed

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  19. Diffusive electronic transport in superconductor-semiconductor-superconductor junctions of Al or Nb on δ-doped GaAs

    NASA Astrophysics Data System (ADS)

    Kutchinsky, J.; Taboryski, R. J.; Clausen, T.; Sørensen, C. B.; Lindelof, P. E.; Hansen, J. Bindslev; Jacobsen, C. Schelde; Skov, J. L.

    1996-02-01

    We report measurements on planar superconductor-semiconductor-superconductor (S-Sm-S) junctions consisting of a n++ modulation doped conduction layer in MBE grown GaAs with superconducting contacts of Al or Nb. At distances between the two superconducting banks below ≈3.5μm we observe a coupling between the two superconductors, due to multiple Andreev reflections at the S-Sm interfaces.

  20. Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

    SciTech Connect

    Asaka, Naohiro; Harasawa, Ryo; Tackeuchi, Atsushi; Lu, Shulong; Dai, Pan

    2014-03-17

    We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100 K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10 K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3–3.1 ns at 10–100 K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10–77 K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism.

  1. Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction

    SciTech Connect

    Darbandi, A.; Salehzadeh, O.; Watkins, S. P.; Kuyanov, P.; LaPierre, R. R.

    2014-06-21

    We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. Similar current-voltage properties were observed for partially axially relaxed GaAs/GaP NWs. This indicates a negligible contribution of misfit dislocations in the charge transport properties of the NWs. Low temperature micro-photoluminescence (μ-PL) measurements were also carried out for both uncapped and passivated GaAs NWs. The improvement of the integrated (μ-PL) intensity for GaAs/GaP NWs further confirms the effect of passivation.

  2. High pressure and DX centers in heavily doped bulk GaAs

    NASA Astrophysics Data System (ADS)

    Suski, T.; Piotrzkowski, R.; Wiśniewski, P.; Litwin-Staszewska, E.; Dmowski, L.

    1989-08-01

    Measurements of the pressure dependence of electron concentration and mobility have been analyzed for heavily doped, bulk GaAs:(Si,Sn,S,Te). It is demonstrated that the samples with n>2×1018 cm-3 exhibit the effect of carrier freeze-out for pressures below 20 kbar. GaAs:Te represents the exception to this behavior (n versus pressure is constant up to 25 kbar). Two models of the localized state of the donor are considered. Neutral, DX0, or negatively charged, DX-, states might appear after trapping one or two electrons, respectively, by the positively charged donor center. The results obtained show that the energetic level related to the DX center, EDX, is located much higher in the conduction band than could be deduced from results extrapolated from Al1-xGaxAs (EDX situated about 170 meV above the bottom of the Γ conduction band, versus EDX>250 meV obtained in this work). The results show that the localized and metastable DX center is not related to any single conduction-band minimum; its energy position and pressure coefficient exhibit significant temperature dependence. For a Si donor in GaAs, weakening of the electron-lattice coupling strength as a result of applying pressure is anticipated. Increase of electron mobility with decreasing carrier concentration has been observed here. Though it is suggestive to use this result for eliminating the concept of the DX- center, some objections to this conclusion, due to possible correlations in dopant distribution, are presented in the paper.

  3. Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

    NASA Astrophysics Data System (ADS)

    Tanaka, Takeshi; Kaneda, Naoki; Mishima, Tomoyoshi; Kihara, Yuhei; Aoki, Toshichika; Shiojima, Kenji

    2015-04-01

    We studied the roles of lightly doped carbon in a series of n-GaN Schottky diode epitaxial structures on freestanding GaN substrates, and evaluated the effects of the doping on diode performances. A large variation of compensation ratio was observed for carbon doping at (1-2) × 1016 cm-3. A model was proposed to explain this phenomenon, in which a vulnerable balance between donor-type CGa and deep acceptor CN strongly affected the free-carrier generation. Application of Norde plots and reverse biased leakage current in current-voltage measurements suggested provisional optimization for a free-carrier concentration of 8 × 1015 cm-3 to achieve a tradeoff between breakdown voltage and on-resistance of the n-GaN diodes.

  4. Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

    SciTech Connect

    Islam, A. Z. M. Touhidul; Jung, D. W.; Noh, J. P.; Otsuka, N.

    2009-05-01

    Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

  5. Efficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area

    SciTech Connect

    Seyedi, M. A. Yao, M.; O'Brien, J.; Wang, S. Y.; Dapkus, P. D.

    2014-07-28

    Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50 μm square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10 GHz at various applied reverse biases and optical intensities to explore the effects of photo-generated carrier screening on modulation bandwidth. Last, the bandwidth dependence on applied reverse bias and optical intensity is simulated as a means to quantify average carrier velocities in nanowire material systems.

  6. Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Lin, T. L.; Grunthaner, P. J.; Andersson, P. O.; Iannelli, J. M.

    1988-01-01

    Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p(+) layer to 0.89 eV for a sample with a 20-nm-thick p(+) layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.

  7. Investigation of 1/f Noise and Superimposed RTS Noise in Ti-Au/n-Type GaAs Schottky Barrier Diodes

    NASA Astrophysics Data System (ADS)

    Klyuev, Alexey V.; Yakimov, Arkady V.

    2015-10-01

    Low frequency noise characteristics of Schottky diodes are investigated. Two noise components were found in experimental noise records: random telegraph signal (RTS), caused by burst noise, and 1/f Gaussian noise. The noise is sampled and recorded on a PC. Then, in addition to the spectrum, the probability density function (pdf) of the total noise is analyzed. In the case of the mixture of the burst noise and Gaussian (1/f) noise, the pdf has two maxima separated by a local minimum. Extraction of burst noise component from Gaussian noise background was performed using the pdf, standard signal detection theory, and advanced signal-processing techniques. It is concluded that the RTS noise and 1/f noise have different physical origins in Schottky diodes. The raw noise is split into two components. One appeared to be burst noise with a Lorentzian-like spectral shape. The other component is 1/f noise. Having extracted 1/f noise, we have studied the dependence of noise spectral values on the current across the diode.

  8. Observation of the DX center in Pb-doped GaAs

    NASA Astrophysics Data System (ADS)

    Willke, U.; Maude, D. K.; Sallese, J. M.; Fille, M. L.; el Jani, B.; Gibart, P.; Portal, J. C.

    1993-06-01

    Pb in GaAs introduces a DX center-like (metastable) defect level that is (229±16) meV above the Γ-conduction-band edge, in a similar energetic position to the Si and Sn related DX centers in GaAs. The persistent photoconductivity effect quenches at approximately 50 K, indicating that the barrier to capture for the Pb and Sn dopants are similar. Despite the quite different atomic parameters of the Pb atom compared with the Sn atom, no significant chemical shifts have been found.

  9. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    DOE PAGES

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-09-01

    We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm–3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 μm and ~8 μm, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V–1 s–1 for n-GaAsmore » and 50–240 cm V–1 s–1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.« less

  10. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    SciTech Connect

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-09-01

    We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm–3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 μm and ~8 μm, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V–1 s–1 for n-GaAs and 50–240 cm V–1 s–1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.

  11. Correspondence between MOS and modulation-doped structures

    NASA Astrophysics Data System (ADS)

    Pierret, R. F.; Lundstrom, M. S.

    1984-03-01

    There is currently considerable interest in the development of modulation-doped field-effect transistors suitable for high-speed applications. A promising version of the modulation-doped FET consists of a Schottky-barrier contact atop a thin Al(x)Ga(1-x)As layer on a lightly doped GaAs underlayer. It is pointed out that for a n-AlGaAs/p-GaAs structure, the conduction band discontinuity at the AlGaAs-GaAs interface gives rise to an inversion layer at the GaAs surface. The present paper is concerned with the physical correspondence between n-AlGaAs/p-GaAs modulation-doped structures and MOS structures. It is shown that certain key modulation-doped relationships can be obtained directly from MOSFET relationships.

  12. Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

    NASA Technical Reports Server (NTRS)

    Wang, Yang

    1994-01-01

    We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

  13. High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer

    SciTech Connect

    Hai, Pham Nam; Yatsui, Takashi; Ohtsu, Motoichi; Tanaka, Masaaki

    2014-09-21

    We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p⁺-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ~700 K for a low input electrical power density of 0.4 W/cm², while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.

  14. Comparison of OARE Accelerometer Data with Dopant Distribution in Se-Doped GaAs Crystals Grown During USML-1

    NASA Technical Reports Server (NTRS)

    Moskowitz, Milton E.; Bly, Jennifer M.; Matthiesen, David H.

    1997-01-01

    Experiments were conducted in the crystal growth furnace (CGF) during the first United States Microgravity Laboratory (USML-1), the STS-50 flight of the Space Shuttle Columbia, to determine the segregation behavior of selenium in bulk GaAs in a microgravity environment. After the flight, the selenium-doped GaAs crystals were sectioned, polished, and analyzed to determine the free carrier concentration as a function of position, One of the two crystals initially exhibited an axial concentration profile indicative of diffusion controlled growth, but this profile then changed to that predicted for a complete mixing type growth. An analytical model, proposed by Naumann [R.J. Naumann, J. Crystal Growth 142 (1994) 253], was utilized to predict the maximum allowable microgravity disturbances transverse to the growth direction during the two different translation rates used for each of the experiments. The predicted allowable acceleration levels were 4.86 microgram for the 2.5 micrometers/s furnace translation rate and 38.9 microgram for the 5.0 micrometers/s rate. These predicted values were compared to the Orbital Acceleration Research Experiment (OARE) accelerometer data recorded during the crystal growth periods for these experiments. Based on the analysis of the OARE acceleration data and utilizing the predictions from the analytical model, it is concluded that the change in segregation behavior was not caused by any acceleration events in the microgravity environment.

  15. First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

    SciTech Connect

    Schulthess, Thomas C; Temmerman, Walter M; Szotek, Zdzislawa; Svane, Axel; Petit, Leon

    2007-01-01

    We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

  16. Perpendicular-to-Parallel Spin Reorientation in a Mn-Doped GaAs Quantum Canting or Phase Separation

    SciTech Connect

    Fishman, Randy Scott; Reboredo, Fernando A; Brandt, Alex B; Moreno, Juana

    2007-01-01

    It is well known that the magnetic anisotropy in a compressively-strained Mn-doped GaAs film changes from perpendicular to parallel with increasing hole concentration p. We study this reorientation transition at T = 0 for a quantum well with Mn impurities confined to the z = 0 plane. With increasing p, the angle 0 that minimizes the energy E increases continuously from 0 (perpendicular anisotropy) to /2 (parallel anisotropy) within some range of p. The shape of Emin(p) suggests that the quantum well becomes phase separated with regions containing low hole concentrations and perpendicular moments interspersed with other regions containing high hole concentrations and parallel moments. However, consideration of the Coulomb energy costs associated with phase separation suggests that the true magnetic state in the transition region is canted with 0 < < /2.

  17. Intense laser field effects on p-d exchange interaction in single manganese doped GaAs

    SciTech Connect

    Vieira Moura, Fabio; Qu Fanyao; Gargano, Ricardo

    2011-11-01

    We have developed a comprehensive theory about optical control of p - d exchange interaction between spins of hole and Mn{sup 2+} in single-manganese doped GaAs material irradiated by a monochromatic, linearly polarized, intense pulsed laser field (PLF) under nonresonant conditions. The p - d exchange interaction leads to formation of magnetic polaron. While the PLF induces a dressed acceptor Coulomb potential, which transforms single center problem into the one with two virtual positively charged centers, resembling hydrogen molecule ion (H{sub 2}{sup +}). The dichotomy of hole wave functions, determined by the laser-intensity, affects strongly the p - d exchange interaction as well as binding energy of magnetic polaron. Increasing the laser intensity reduces the magnetic polaron binding energy. At larger excitation intensity, the magnetic polaron can be completely dissolved.

  18. Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage

    NASA Astrophysics Data System (ADS)

    Lee, W. Y.; Chien, J. Y.; Wang, D. P.; Huang, K. F.; Huang, T. C.

    2002-04-01

    Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz-Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F≈Fbi-δF/2 when δF≪Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra.

  19. A 4-W 56-dB gain microstrip amplifier at 15 GHz utilizing GaAs FET's and IMPATT diodes

    NASA Technical Reports Server (NTRS)

    Sokolov, V.; Namordi, M. R.; Doerbeck, F. H.

    1979-01-01

    Performance results and design considerations are presented for an all solid-state Ku-band power amplifier which is feasible for use in PM communication systems for airborne or spacecraft transmitter applications. A six-stage GaAs FET preamplifier and a driver and balanced power amplifier utilizing GaAs IMPATT diodes operating in the injection locked oscillator mode are discussed. For high power and efficiency Schottky-Read IMPATT's with low-high-low doping profiles are employed. For improved reliability the IMPATT's incorporate a TiW barrier metallization to retard degradation of the IMPATT's. Results of accelerated life testing of the IMPATT devices are also presented.

  20. Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

    NASA Astrophysics Data System (ADS)

    Petit, Matthieu; Hayakawa, Ryoma; Wakayama, Yutaka; Le Thanh, Vinh; Michez, Lisa

    2016-09-01

    Mn5Ge3C x compound is of great interest for spintronics applications. The various parameters of Au/Mn5Ge3C0.6/Ge(1 1 1) and Au/Mn5Ge3C0.6/δ-doped Ge(1 1 1) Schottky diodes were measured in the temperature range of 30-300 K by using current-voltage and capacitance-voltage techniques. The Schottky barrier heights and ideality factors were found to be temperature dependent. These anomalous behaviours were explained by Schottky barrier inhomogeneities and interpreted by means of a Gaussian distribution model of the Schottky barrier heights. Following this approach we show that the Mn5Ge3C0.6/Ge contact is described with a single Gaussian distribution and a conduction mechanism mainly based on the thermoionic emission. On the other hand the Mn5Ge3C0.6/δ-doped Ge contact is depicted with two Gaussian distributions according to the temperature and a thermionic-field emission process. The differences between the two types of contacts are discussed according to the distinctive features of the growth of heavily doped germanium thin films.

  1. Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

    NASA Astrophysics Data System (ADS)

    Petit, Matthieu; Hayakawa, Ryoma; Wakayama, Yutaka; Le Thanh, Vinh; Michez, Lisa

    2016-09-01

    Mn5Ge3C x compound is of great interest for spintronics applications. The various parameters of Au/Mn5Ge3C0.6/Ge(1 1 1) and Au/Mn5Ge3C0.6/δ-doped Ge(1 1 1) Schottky diodes were measured in the temperature range of 30–300 K by using current–voltage and capacitance–voltage techniques. The Schottky barrier heights and ideality factors were found to be temperature dependent. These anomalous behaviours were explained by Schottky barrier inhomogeneities and interpreted by means of a Gaussian distribution model of the Schottky barrier heights. Following this approach we show that the Mn5Ge3C0.6/Ge contact is described with a single Gaussian distribution and a conduction mechanism mainly based on the thermoionic emission. On the other hand the Mn5Ge3C0.6/δ-doped Ge contact is depicted with two Gaussian distributions according to the temperature and a thermionic-field emission process. The differences between the two types of contacts are discussed according to the distinctive features of the growth of heavily doped germanium thin films.

  2. Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

    NASA Astrophysics Data System (ADS)

    Rench, D. W.; Schiffer, P.; Samarth, N.

    2011-09-01

    We describe a systematic study of the synthesis, microstructure, and magnetization of hybrid ferromagnet-semiconductor nanomaterials comprised of MnAs nanoclusters embedded in a p-doped GaAs matrix. These samples are created during the in situ annealing of Be-doped (Ga,Mn)As heterostructures grown by molecular beam epitaxy. Transmission electron microscopy and magnetometry studies reveal two distinct classes of nanoclustered samples whose structural and magnetic properties depend on the Mn content of the initial (Ga,Mn)As layer. For Mn content in the range 5-7.5%, annealing creates a superparamagnetic material with a uniform distribution of small clusters (diameter ˜6 nm) and with a low blocking temperature (TB˜10 K). While transmission electron microscopy cannot definitively identify the composition and crystalline phase of these small clusters, our experimental data suggest that they may be comprised of either zinc-blende MnAs or Mn-rich regions of (Ga,Mn)As. At higher Mn content (≳8%), we find that annealing results in an inhomogeneous distribution of both small clusters as well as much larger NiAs-phase MnAs clusters (diameter ˜25 nm). These samples also exhibit supermagnetism, albeit with substantially larger magnetic moments and coercive fields, and blocking temperatures well above room temperature.

  3. Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

    SciTech Connect

    García-Cervantes, H.; Rodríguez-Vargas, I.

    2014-05-15

    We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n{sub 2DA} and n{sub 2DB}, and the same well width. The Thomas-Fermi approximation, the semi-empirical sp{sub 3}s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures.

  4. The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)

    NASA Technical Reports Server (NTRS)

    Jamison, K. D.; Chen, H. C.; Bensaoula, A.; Lim, W.; Trombetta, L.

    1989-01-01

    Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.

  5. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

    NASA Technical Reports Server (NTRS)

    Bhattacharya, P. K.; Dhar, S.; Berger, P.; Juang, F.-Y.

    1986-01-01

    A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

  6. GaAs nanowires grown on Al-doped ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Haggren, Tuomas; Perros, Alexander; Dhaka, Veer; Huhtio, Teppo; Jussila, Henri; Jiang, Hua; Ruoho, Mikko; Kakko, Joona-Pekko; Kauppinen, Esko; Lipsanen, Harri

    2013-08-01

    We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 °C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand ˜400 °C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer.

  7. Illumination Dependent Admittance Characteristics of Au/Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)/n-Si Schottky Barrier Diodes (SBDs)

    NASA Astrophysics Data System (ADS)

    Taşçıoǧlu, I.; Aydemir, U.; Altındal, Ş.; Tunç, T.

    2011-12-01

    This study presents the effect of illumination on main electrical parameters of Schottky barrier diode (SBD). The admittance (capacitance-voltage (C-V) and conductance-voltage (G/ω-V)) characteristics of Au/Zinc acetate doped polyvinyl alcohol (PVA:Zn)/n-Si SBD were investigated in dark and under various illumination intensities. Experimental results demonstrate that the C-V plots give a peak due to the illumination induced interface states or electron-hole pairs at metal/semiconductor (M/S) interface. The C-2-V plots were also drawn to determine main electrical parameters such as doping concentration (ND), depletion layer width (WD) and barrier height (ΦB(C-V)) of device. In addition, the voltage dependence Rs values were obtained from C-V and G/ω-V data by using Nicollian and Brews method. In order to obtain the real diode capacitance and conductance, the high frequency (1 MHz) Cm and Gm/w values were corrected for the effect of series resistance. All these observations confirm that both C-V and G/w-V characteristics were strongly affected by illumination.

  8. Indium-doped GaAs: A very dilute alloy system

    NASA Astrophysics Data System (ADS)

    Laurenti, J. P.; Roentgen, P.; Wolter, K.; Seibert, K.; Kurz, H.; Camassel, J.

    1988-03-01

    The influence of indium incorporation in GaAs organometallic-vapor-phase-epitaxy (OMVPE) layers has been investigated in great detail. The results obtained concern the change in band-gap energy, the concentration of residual impurities, and the low-temperature (2-K) photoluminescence (PL) efficiency. For In concentrations ranging between 0 and 6.5×1019 cm-3, both A0X and D0X bound-exciton lines could be resolved. Together with the near-band-gap transitions involving shallow impurities (DA- and eA-related recombination lines), they shift toward lower energies versus indium content. This indicates the formation of a ternary compound Ga1-xInxAs, even at these extremely dilute indium concentrations. After a quantitative calibration of the indium content, linear relations have been found which connect the PL emission line energies and the indium concentration. They make low-temperature PL measurements the most quantitative, and nondestructive, tool for precise composition studies. In this case, care should be taken that the slope parameters are line dependent. For instance, we find a slight, but finite, discrepancy between the slope parameters corresponding to substitutional acceptors on Ga and As sites, respectively. This is discussed in terms of the two different sublattices by using a simple cluster model of 17 atoms. Lastly, we find the absolute PL intensities to increase versus indium concentration: This indicates an improvement in the optical quality of our samples. Since, on a relative scale, the PL signals involving ZnGa and/or MgGa residual acceptors are not significantly affected by the amount of indium incorporated, but depend mainly on the growth sequence, we feel that indium in GaAs acts primarily by closing nonradiative-recombination paths which are not necessarily associated with gallium vacancies.

  9. Effect of the V{sub As}V{sub Ga} complex defect doping on properties of the semi-insulating GaAs

    SciTech Connect

    Ma, Deming Qiao, Hongbo; Shi, Wei; Li, Enling

    2014-04-21

    The different position V{sub As}V{sub Ga} cluster defect doping in semi-insulating (SI) GaAs has been studied by first-principles calculation based on hybrid density functional theory. Our calculated results show that EL6 level is formed due to the V{sub As}V{sub Ga} complex defect, which is very close to the experimental result. It provides the explanation of the absorption of laser with the wavelength beyond in semi-insulating GaAs. The formation energy of V{sub As}V{sub Ga} complex defect is found to decrease from surface to interior gradually. The conduction band minima and valence band maxima of GaAs (001) surface with the V{sub As}V{sub Ga} complex defect are all located at Γ point, and some defect levels are produced in the forbidden band. In contrast, the conduction band minima and valence band maxima of GaAs with the interior V{sub As}V{sub Ga} complex defect are not located at the same k-point, so it might involve the change of momentum in the electron transition process. The research will help strengthen the understanding of photoelectronic properties and effectively guide the preparation of the SI-GaAs materials.

  10. Analysis of Hyperabrupt and Uniform Junctions in GaAs for the Application of Varactor Diode.

    PubMed

    Heo, Jun-Woo; Hong, Sejun; Choi, Seok-Gyu; Kim, Hyun-Seok

    2015-10-01

    In this study, we present a GaAs varactor diode with a hyperabrupt junction for the enhancement of breakdown voltage and capacitance variation in a reverse bias state. The hyperabrupt doping profile in the n-type active layer is prepared in a controlled nonlinear manner, with the density of the dopants increasing towards the Schottky junction. The hyperabrupt GaAs varactor diode is fabricated and characterized for breakdown voltage and capacitance over the electric field, induced by an applied reverse bias voltage. A reduced value of the electric field is observed owing to the nonlinear behavior of the electric field at the hyperabrupt junction, although the device has a larger doping density at the Schottky junction. Furthermore, the capacitance ratio of the hyperabrupt junction diode is also improved. Variation in the device capacitance is affected by variation in the depletion region across the junction. Technology CAD is used to understand the experimental phenomena by considering the magnitude of charge density as a function of the doping profile. A higher breakdown voltage and greater capacitance modulation are shown in the hyperabrupt junction diode compared to the uniform junction diode.

  11. Heat load of a P-doped GaAs photocathode in SRF electron gun

    SciTech Connect

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

    2010-05-23

    Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

  12. Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using noval cyclopentadienyl-based erbium sources

    NASA Technical Reports Server (NTRS)

    Redwing, J. M.; Kuech, T. F.; Gordon, D. C.; Vaartstra, B. A.; Lau, S. S.

    1994-01-01

    Erbium-doped GaAS layers were grown by metalorganic vapor phase epitaxy using two new sources, bis(i-propylcyclopentadienyl)cyclopentadienyl erbium and tris(t-butylcyclopentadienyl) erbium. Controlled Er doping in the range of 10(exp 17) - 10(exp 18)/cu cm was achieved using a relatively low source temperature of 90 C. The doping exhibits a second-order dependence on inlet source partial pressure, similar to behavior obtained with cyclopentadienyl Mg dopant sources. Equivalent amounts of oxygen and Er are present in 'as-grown' films indicating that the majority of Er dopants probably exist as Er-O complexes in the material. Er(+3) luminescence at 1.54 micrometers was measured from the as-grown films, but ion implantation of additional oxygen decreases the emission intensity. Electrical compensation of n-type GaAs layers codoped with Er and Si is directly correlated to the Er concentration is proposed to arise from the deep centers associated with Er which are responsible for a broad emission band near 0.90 micrometers present in the photoluminescence spectra of GaAs:Si, Er films.

  13. Magnesium doping of efficient GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Lewis, C. R.; Ford, C. W.; Werthen, J. G.

    1984-01-01

    Magnesium has been substituted for zinc in GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles, and facilitate high temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.

  14. Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures

    SciTech Connect

    Lavrukhin, D. V. Yachmenev, A. E.; Bugaev, A. S.; Galiev, G. B.; Klimov, E. A.; Khabibullin, R. A.; Ponomarev, D. S.; Maltsev, P. P.

    2015-07-15

    Molecular-beam epitaxy is used for the preparation of structures based on “low-temperature” grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28–1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580°C; these features are related to the formation of point defects and their complexes. The “pump–probe” light transmission measurements reveal that the characteristic lifetimes of nonequilibrium carriers in the fabricated structures amount to T{sup c} ≈ 1.2–1.5 ps.

  15. Direct determination of impact-parameter-dependent stopping powers for million-electron-volt He ions penetrating Er-doped GaAs

    SciTech Connect

    Yamamoto, Y.; Kaczanowski, J.; Kido, Y.; Nakata, J.; Yamaguchi, H.; Takahei, K.

    1996-03-01

    We have directly determined the impact-parameter-dependent stopping powers for 2.0- and 2.5-MeV He ions passing through GaAs single crystals. The points reside in the preparation of the single-crystal sample with a dopant of a heavy element located in some definite interstitial site at definite depth and in synthesis of a Monte Carlo program to simulate accurately the ion trajectories. Er-doped homoepitaxial GaAs layers grown by molecular-beam epitaxy and by metal-organic chemical-vapor deposition were used for this purpose. As previously reported, fine single-crystal clusters of ErAs are formed in the GaAs host and Er takes the position exactly equivalent to the tetrahedral interstitial site. The present Monte Carlo simulation has revealed the fact that some definite impact-parameter region dominates the backscattering Er peak position and this region shifts continuously by tilting the incident beam axis slightly from a major crystal axis. The results obtained are compared with the Oen-Robinson [Nucl. Instrum. Methods {bold 132}, 647 (1976)] model and other theoretical predictions and clearly show that inner-shell excitations and ionizations contribute significantly to the stopping power even for large impact parameters. {copyright} {ital 1996 The American Physical Society.}

  16. Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chang, Yoon Jung; Simmonds, Paul J.; Beekley, Brett; Goorsky, Mark S.; Woo, Jason C. S.

    2016-04-01

    Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.

  17. Self-Aligned Guard Rings For Schottky-Barrier Diodes

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1990-01-01

    Proposed self-aligned guard ring increases active area of Schottky-barrier infrared detector. Concept developed for silicide Schottky-barrier diodes in which platinum silicide or iridium silicide Schottky-contacts provide cutoff wavelengths of about 6 or 10 micrometers. Grid of silicon dioxide doped with phosphorus etched on silicon wafer, and phosphorus from grid diffused into substrate, creating n-type guard rings. Silicide layers formed in open areas of grid. Overlap of guard rings and silicide layers small.

  18. Schottky barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M. (Inventor)

    1981-01-01

    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

  19. Schottky barrier solar cell

    SciTech Connect

    Stirn, R.J.; Yeh, Y.C.M.

    1981-07-01

    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. Official Gazette of the U.S. Patent and Trademark Office

  20. Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Li, K. L.; Dong, J. R.; Sun, Y. R.; Zeng, X. L.; Zhao, Y. M.; Yu, S. Z.; Zhao, C. Y.; Yang, H.

    2014-01-01

    We investigate the effects of Si doping on the strain relaxation of the compositionally step-graded (Al)GaInP buffers grown by metal-organic chemical vapor deposition on (0 0 1) GaAs substrates with different miscuts toward (1 1 1)A. It is found that in the 2° samples, high Si doping can reduce both the α and β dislocation densities by delaying and suppressing the formation of phase separation in the buffer. In contrast, in the 7° samples, Si dopants deteriorate the buffer quality through increasing the dislocation density accompanying with the tilt reduction along the [1 1 0] direction, and a striking feature, bunches of β dislocations away from the interfaces, is observed in the [1 1 0] cross-sectional transmission electron microscopy images. A cross-slip mechanism closely associated with the pinning effect of Si on α dislocation motion is proposed to explain the multiplication of β dislocations. These results indicate that selecting a moderate Si doping density and substrate miscut are critical for the design and fabrication of metamorphic optoelectronic devices.

  1. A new technique to study transient conductivity under pulsed monochromatic light in Cr-doped GaAs using acoustoelectric voltage measurement

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood

    1991-01-01

    The transient conductivity of high-resistivity Bridgman-grown Cr-doped GaAs under pulsed monochromatic light is monitored using transverse acoustoelectric voltage (TAV) at 83 K. Keeping the photon flux constant, the height and transient time constant at the TAV are used to calculate the energy dependence of the trap density and its cross section, respectively. Two prominent trap profiles with peak trap densities of approximately 10 to the 17th/cu cm eV near the valence and the conduction bands are detected. These traps have very small capture cross sections in the range of 10 to the -23 to 10 to the -21st cm sq. A phenomenon similar to the persistent photoconductivity with transient time constants in excess of a few seconds in high-resistivity GaAs at T = 83 K is also detected using this technique. These long relaxation times are readily explained by the spatial separation of the photo-excited electron-hole pairs and the small capture cross section and large density of trap distribution near the conduction band.

  2. 808-nm diode-pumped dual-wavelength passively Q-switched Nd:LuLiF4 laser with Bi-doped GaAs

    NASA Astrophysics Data System (ADS)

    Li, S. X.; Li, T.; Li, D. C.; Zhao, S. Z.; Li, G. Q.; Hang, Y.; Zhang, P. X.; Li, X. Y.; Qiao, H.

    2015-09-01

    Diode-pumped CW and passively Q-switched Nd:LuLiF4 lasers with stable, synchronous dual-wavelength operations near 1047 and 1053 nm were demonstrated for the first time. The maximal CW output power of 821 mW was obtained at an incident pump power of 6.52 W. Employing high quality Bi-doped GaAs as saturable absorber, stable dual-wavelength Q-switched operation was realized. Under 6.52 W incident pump power, the minimal pulse duration of 1.5 ns, the largest single pulse energy of 11.32 μJ, and the highest peak power of 7.25 kW were achieved.

  3. Consideration of velocity saturation in the design of GaAs varactor diodes

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.; Peatman, William C. B.; Zimmermann, Ruediger; Zimmermann, Ralph

    1993-01-01

    The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. Experimental data is presented which confirms that improved multiplier performance can be achieved.

  4. Studies on metal/n-GaAs Schottky barrier diodes: The effects of temperature and carrier concentrations

    SciTech Connect

    Mangal, Sutanu; Banerji, P.

    2009-04-15

    Metal/Semiconductor Schottky diodes were fabricated to study the effect of temperature and carrier concentrations on diode parameters, such as ideality factor and barrier heights. The diodes were formed on the epitaxial layers of metal organic chemical vapor deposition (MOCVD) grown n-GaAs with metals such as Al, Pd, and Zn-Pd deposited onto n-GaAs by thermal evaporation technique. Trimethyl gallium and AsH{sub 3} were used as Ga and As precursors, respectively, to grow GaAs on semi-insulating GaAs substrates at 600 deg. C and H{sub 2}S was used for n-type doping in a horizontal reactor atmospheric pressure MOCVD system. The Schottky diodes were characterized by forward bias current-voltage measurements in the temperature range 130-300 K and capacitance-voltage measurement at room temperature and diode parameters such as ideality factor and barrier height have been evaluated. It is found that the Schottky barrier height decreases with decrease in temperature while the ideality factor increases. It is also observed that the barrier height increases linearly with the applied forward bias voltage and the rate of change of barrier height with voltage increases for higher carrier concentration of the semiconductor. The carrier concentration of n-GaAs was chosen in the regime 1x10{sup 16}-8.2x10{sup 16} cm{sup -3} so that the depletion region extends inside the semiconductor and the diode can be used as a III-V photovoltaic device.

  5. Graphite based Schottky diodes formed semiconducting substrates

    NASA Astrophysics Data System (ADS)

    Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

    2010-03-01

    We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

  6. Diagnostics of Si multi-δ-doped GaAs layers by Raman spectroscopy on bevelled structures

    NASA Astrophysics Data System (ADS)

    Srnanek, R.; Gurnik, P.; Harmatha, L.; Gregora, I.

    2001-11-01

    A new procedure for determination of the doping spikes location and the spatial extent of dopants in Si single and multi-δ-doped layers by micro-Raman spectroscopy is presented. The procedure is based on the evaluation of ITO/ ILO intensities along the bevelled structure. The obtained values of Si extent from 4.0 to 4.5 nm are in good coincidence with values presented in the literature. After calibration, the procedure will be suitable for direct estimation of dopant profiles in δ-doped layers in semiconductor materials, where a bevel through the structures can be prepared.

  7. Optical and electrical properties of heavily carbon-doped GaAs fabricated by high-energy ion-implantation

    SciTech Connect

    Shima, Takayuki |; Makita, Yunosuke; Kimura, Shinji

    1996-12-31

    High-energy (400 keV) implantation of carbon (C) ions was made into LEC-GaAs substrates with C concentration ([C]) of 10{sup 19}--10{sup 22} cm{sup {minus}3}. 2 K photoluminescence (PL) and Hall effect measurements indicated that activation rate of C in LEC GaAs is both optically and electrically extremely low even after furnace-annealing at 850 C for 20 min. For [C] = 1 {times} 10{sup 22} cm{sup {minus}3}, two novel strong emissions were obtained and PL measurements as a function of excitation power and sample temperature suggested that the two emissions one at 1.485 eV and the other at 1.305 eV should reflect the formation of a new alloy between GaAs and C. Dual implantation of C{sup +} and Ga{sup +} ions was carried out to improve the activation or substitution rate. The authors found that nearly 90% activation rate can be achieved for C dose of 2.2 {times} 10{sup 13} cm{sup {minus}2}.

  8. Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications

    NASA Astrophysics Data System (ADS)

    McKinney, K.; Mattaugh, R. J.; Bishop, W. L.

    1985-05-01

    Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.

  9. Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications

    NASA Technical Reports Server (NTRS)

    Mckinney, K.; Mattaugh, R. J.; Bishop, W. L.

    1985-01-01

    Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.

  10. Schottky barrier MOSFET systems and fabrication thereof

    DOEpatents

    Welch, J.D.

    1997-09-02

    (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

  11. Schottky barrier MOSFET systems and fabrication thereof

    DOEpatents

    Welch, James D.

    1997-01-01

    (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

  12. Solar and laser energy conversion with Schottky barrier solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y.-C. M.

    1974-01-01

    Photovoltaic devices have been fabricated for solar and short-wavelength laser energy conversion using the thin metal film-semiconductor (Schottky barrier) approach. Studies of the metal film optical characteristics and the voltage outputs were emphasized. Air mass zero efficiencies of 8 to 9% in GaAs and laser conversion efficiencies of 25% at 4880 A in GaAs(0.6)P(0.4) are presently measured, with projected efficiencies of 15 and 45%, respectively. The techniques, if applied successfully to semiconductor thin films, could have an impact in solar energy terrestrial application.

  13. The effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n+ type doped GaAs

    NASA Astrophysics Data System (ADS)

    Wang, D. P.; Huang, K. M.; Shen, T. L.; Huang, K. F.; Huang, T. C.

    1998-01-01

    The electroreflectance (ER) spectra of an undoped-n+ type doped GaAs has been measured at various amplitudes of modulating fields (δF). Many Franz-Keldysh oscillations were observed above the band gap energy, thus enabling the electric field (F) in the undoped layer to be determined. The F is obtained by applying fast Fourier transformation to the ER spectra. When δF is small, the power spectrum can be clearly resolved into two peaks, which corresponds to heavy- and light-hole transitions. When δF is less than ˜1/8 of the built-in field (Fbi˜77 420 V/cm), the F deduced from the ER is almost independent of δF. However, when larger than this, F is increased with δF. Also, when δF is increased to larger than ˜1/8 of Fbi, a shoulder appears on the right side of the heavy-hole peak of the power spectrum. The separation between the main peak and the shoulder of the heavy-hole peak becomes wider as δF becomes larger.

  14. Coherent dynamics of Landau-Levels in modulation doped GaAs quantum wells at high magnetic fields

    NASA Astrophysics Data System (ADS)

    Liu, Cunming; Paul, Jagannath; Reno, John; McGill, Stephen; Hilton, David; Karaiskaj, Denis

    By using two-dimensional Fourier transform spectroscopy, we investigate the dynamics of Landau-Levels formed in modulation doped GaAs/AlGaAs quantum wells of 18 nm thickness at high magnetic fields and low temperature. The measurements show interesting dephasing dynamics and linewidth dependency as a function of the magnetic field. The work at USF and UAB was supported by the National Science Foundation under grant number DMR-1409473. The work at NHMFL, FSU was supported by the National Science Foundation under grant numbers DMR-1157490 and DMR-1229217. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

  15. Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence

    NASA Astrophysics Data System (ADS)

    Prucnal, S.; Gao, K.; Skorupa, I.; Rebohle, L.; Vines, L.; Schmidt, H.; Khalid, M.; Wang, Y.; Weschke, E.; Skorupa, W.; Grenzer, J.; Hübner, R.; Helm, M.; Zhou, S.

    2015-12-01

    The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here, we present room-temperature photoluminescence and ellipsometry measurements of G a100 %-xM nxAs alloy. The upshift of the valence band is proven by the redshift of the room temperature near band-gap emission from the G a100 %-xM nxAs alloy with increasing Mn content. It is shown that even a doping by 0.02% of Mn affects the valence-band edge, and it merges with the impurity band for a Mn concentration as low as 0.6%. Both x-ray diffraction pattern and high-resolution cross-sectional transmission electron microscopy images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.

  16. Infrared absorption properties of the EL2 and the isolated As/sub Ga/ defects in neutron-transmutation-doped GaAs: Generation of an EL2-like defect

    SciTech Connect

    Manasreh, M.O.; Fischer, D.W.

    1989-02-15

    The EL2 and the isolated As/sub Ga/ antisite defects in neutron-transmutation-doped (NTD) GaAs were studied by using the infrared (ir) absorption technique concurrent with thermal annealing. The results show that irradiation with low thermal-neutron doses partially decomposes the EL2 complex in semi-insulating (si) GaAs grown by the liquid-encapsulated Czochralski (LEC) growth technique. On the other hand, a small amount of EL2 is generated in as-grown Ga-rich undoped p-type LEC GaAs. The EL2 defect in low-dose thermal-neutron-irradiated samples (both si and p-type) was found to be stable up to 850 /sup 0/C. High neutron-irradiation doses, however, completely annihilate EL2 but generate a different EL2-like defect (DL2). The DL2 defect is observed after annealing the high-dose NTD samples for 6 min at 600 /sup 0/C. The DL2 concentration is observed to be larger than that of EL2 in as-grown LEC si GaAs by a factor of 2.3 or higher. The photoquenching and thermal recovery properties of DL2 and EL2 defects are identical. However, the DL2 defect does not exhibit the same thermal stability or the zero-phonon line of the EL2 defect. Thermal annealing kinetics shows that DL2 is composed of three point defects. The residual absorption (unquenchable component) after photoquenching the EL2 (DL2) defect is interpreted as the photoionization of the isolated As/sub Ga/ antisite.

  17. An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3

    NASA Astrophysics Data System (ADS)

    Shirakashi, J.-I.; Matsumoto, K.; Konagai, M.

    Under appropriate bias conditions in ambient humidity, AFM can be used to selectively oxidize the surface of electronic materials such as metals and semiconductors. Therefore, an AFM-based surface modification technique would be a powerful tool for fabricating nanometer-sized metal (M)/insulator (I) or semiconductor (S)/insulator (I) junction structures. Heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3 is also of great interest for application to novel device structures, because the carrier concentration is comparable to that of normal metals. Selective surface oxidation of carbon-doped p-type GaAs was achieved using a negatively biased conductive tip. The oxidation shown here was carried out under 20-25% ambient humidity. By changing the applied bias voltage and the scanning speed of the cantilever, the size of the modified structure wires was precisely controlled, with a feature size of 10 nm. These results suggest that GaAs-based devices with ultra-small SIS junction systems could be realized using the AFM-based surface oxidation process.

  18. Photonic crystal cavities with metallic Schottky contacts

    SciTech Connect

    Quiring, W.; Al-Hmoud, M.; Reuter, D.; Zrenner, A.; Rai, A.; Wieck, A. D.

    2015-07-27

    We report about the fabrication and analysis of high Q photonic crystal cavities with metallic Schottky-contacts. The structures are based on GaAs n-i membranes with an InGaAs quantum well in the i-region and nanostructured low ohmic metal top-gates. They are designed for photocurrent readout within the cavity and fast electric manipulations. The cavity structures are characterized by photoluminescence and photocurrent spectroscopy under resonant excitation. We find strong cavity resonances in the photocurrent spectra and surprisingly high Q-factors up to 6500. Temperature dependent photocurrent measurements in the region between 4.5 K and 310 K show an exponential enhancement of the photocurrent signal and an external quantum efficiency up to 0.26.

  19. Silicon Carbide Schottky Barrier Diode

    NASA Technical Reports Server (NTRS)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  20. Possibility of incongruous interface behavior of In on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Chin, K. K.; Lindau, I.

    1985-11-01

    Photoemission spectroscopy has been used to study the Schottky-barrier formation of In on n- and p-type GaAs(110) interfaces. Our result is different from that reported by R. R. Daniels et al. [J. Vac. Sci. Technol. A 2(2), 831 (1984)]. It is suggested that this incongruous behavior of In on GaAs(110) is due to the kinetics of interface defect formation. Various experimental details which may affect the kinetics are also discussed.

  1. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  2. High gain single GaAs nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Wang, Hao

    2013-08-01

    An undoped single GaAs nanowire (NW) photodetector based on a metal-semiconductor-metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence of leaky-mode resonance.

  3. InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

    NASA Technical Reports Server (NTRS)

    Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

    1992-01-01

    This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

  4. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  5. Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes

    NASA Technical Reports Server (NTRS)

    Leon, R. P.; Newman, N.; Liliental-Weber, Z.; Weber, E. R.; Washburn, J.

    1989-01-01

    The mechanism of the ohmic behavior commonly observed after annealing Au/n-GaAs 110-oriented Schottky diodes was investigated using electron-beam-induced current (EBIC) measurements, secondary electron imaging (SEI), and SEM and TEM observations. The results showed that the ohmic behavior of annealed Schottky diodes originates from a shunt current pathway at the diode periphery. The SEI, EBIC, and electrical measurements indicated that the ohmic leakage current is due to the surface recombinations at the exposed surface of GaAs between elongated Au crystallites.

  6. Schottky barrier formation and band bending revealed by first- principles calculations

    PubMed Central

    Jiao, Yang; Hellman, Anders; Fang, Yurui; Gao, Shiwu; Käll, Mikael

    2015-01-01

    The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania in contact with gold (Au/Nb:TiO2). The local Schottky barrier height is found to vary between 0 and 1.26 eV depending on the position of the dopant. The band bending is caused by a dopant induced dipole field between the interface and the dopant site, whereas the pristine Au/TiO2 interface does not show any band bending. These findings open the possibility for atomic scale optimisation of the Schottky barrier and light harvesting in metal-semiconductor nanostructures. PMID:26065401

  7. Pressure-induced shallow-to-deep donor-state transition in 119doped GaAs observed by Mössbauer spectroscopy

    NASA Astrophysics Data System (ADS)

    Gibart, P.; Williamson, D. L.; Moser, J.; Basmaji, P.

    1990-08-01

    The Sn DX center in GaAs, a deep donor state of Sn, has been observed by Mössbauer measurements at high pressure. The size of the pressure-induced Sn DX Mössbauer resonance compared to the net conduction-electron concentration at zero pressure provides evidence that the Sn DX center localizes two or three electrons in the ground state.

  8. Studies and comparisons of a N+-InGaP/δ(P+)-InGaP/n- GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lour, W. S.; Tsai, M. K.; Lai, K. Y.; Chen, B. L.; Yang, Y. J.

    2001-04-01

    We report a promising N+-InGaP/δ(P+)-InGaP/n-GaAs hetero-planar-doped barrier, which is used to fabricate both high-breakdown and self-aligned T-gate (SAT-gate) field-effect transistors (FETs). The characteristics of the devices and comparisons with previous reports are discussed. The enhanced conduction- and valence-band offsets associated with the new hetero-planar doped barrier show high-breakdown behaviour. In addition, high selective etching between InGaP and GaAs layers together with an ohmic gate allows the fabrication of a SAT-gate with a reduced gate-length of 0.8 µm. In the case of a high-breakdown FET, the drain-source breakdown voltage is as high as 32 V. In addition to competitive direct-current (dc) performances, a reduced knee voltage and improved frequency performances are obtained in SAT-gate FETs. The available unity-current-gain and unity-power-gain frequencies are, respectively, 19.5 and 30 GHz achieved as a 0.6 µm gate is obtained by forming a 1 µm metal gate. Furthermore, all the measured SAT-gate FETs exhibit high-linearity and high-uniformity dc and alternating-current performances.

  9. An integrated membrane sub-harmonic Schottky diode mixers at 340GHz

    NASA Astrophysics Data System (ADS)

    Wang, Junlong; Yang, Dabao; Xing, Dong; Liang, Shixiong; Zhang, Lisen; Zhao, Xiangyang; Feng, Zhihong

    2015-11-01

    This paper presents a sub-harmonic mixer operating over the spectral band 332-348 GHz. The mixers employ integrated GaAs membrane Schottky diode technology. The simulated results show that the conversion loss of the mixer is below dB in the band from 333 GHz to 347 GHz with a local oscillator power requirement of 5mW.The minimum is 8.2dB at 344GHz.

  10. Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

    NASA Astrophysics Data System (ADS)

    Pardo, D.; Grajal, J.

    2015-11-01

    This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology.

  11. Field dependent emission rates in radiation damaged GaAs

    SciTech Connect

    Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M.

    2014-07-07

    We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

  12. Carbon-Nanotube Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

    2006-01-01

    Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid

  13. Effect of Split Gate Size on the Electrostatic Potential and 0.7 Anomaly within Quantum Wires on a Modulation-Doped GaAs /AlGaAs Heterostructure

    NASA Astrophysics Data System (ADS)

    Smith, L. W.; Al-Taie, H.; Lesage, A. A. J.; Thomas, K. J.; Sfigakis, F.; See, P.; Griffiths, J. P.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

    2016-04-01

    We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs /AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one-dimensional channel (estimated using a saddle-point model) and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different lengths. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.

  14. Photoluminescence properties of modulation-doped In{sub x}Al{sub 1–x}As/In{sub y}Ga{sub 1–y}As/In{sub x}Al{sub 1–x}As structures with strained inas and gaas nanoinserts in the quantum well

    SciTech Connect

    Galiev, G. B.; Vasil’evskii, I. S.; Klimov, E. A.; Klochkov, A. N.; Lavruhin, D. V.; Pushkarev, S. S.; Maltsev, P. P.

    2015-09-15

    The photoluminescence spectra of modulation-doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uniform In{sub 0.53}Ga{sub 0.47}As quantum well. Simulation of the band structure shows that this change is caused by a variation in the energy and wave functions of holes. It is demonstrated that the use of InAs inserts leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light- and heavy-hole subbands in the quantum well. A technique for separately controlling the light- and heavy-hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.

  15. Isoelectronic co-doping

    DOEpatents

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  16. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    NASA Astrophysics Data System (ADS)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  17. Dopant-segregated Schottky barrier MOSFETs with an insulated dielectric oxide

    NASA Astrophysics Data System (ADS)

    Shih, Chun-Hsing; Lin, Ching-Chang

    2010-06-01

    An insulated dielectric oxide (IDO) is presented for the dopant-segregated Schottky barrier MOSFETs (DS-SBMOS) to suppress the unwanted on- and off-state leakage currents in short-channel DS-SBMOS. The effects of the IDO on DS-SBMOS are investigated using two-dimensional device simulations. Although the dopant segregation technique can efficiently modify a Schottky barrier to improve Schottky barrier MOSFETs, the performance of scaled DS-SBMOS suffers from degraded short-channel behavior and ambipolar conduction from the extension of a heavily doped segregation layer. With sidewall IDO insulators between the heavily doped N+ segregation layer and P+ halo region, band-to-band and ambipolar leakage currents are simultaneously minimized. Thus, an optimal halo can be utilized to control the short-channel effect without any constraints in problematic leakage currents. Using the IDO architecture, DS-SBMOS can be successfully scaled as a promising candidate for next-generation CMOS devices.

  18. Effects of nanoscale embedded Schottky barriers on carrier dynamics in ErAs:GaAs composite systems

    NASA Astrophysics Data System (ADS)

    Corder, S. N. Gilbert; Kawasaki, J. K.; Palmstrøm, C. J.; KrzyŻanowska, H. T.; Tolk, N. H.

    2015-10-01

    Semiconducting GaAs is widely used in microwave and millimeter integrated circuits, infrared LEDs, lasers, and solar cells. Introducing semimetallic ErAs nanoparticles provides a way to controllably tune the optical and electronic properties of GaAs. We show that for high volume fractions (0.5 %-10 %) of ErAs nanoparticles embedded in GaAs, the relaxation dynamics indicates that ErAs forms discrete states in the GaAs band gap. For specific carrier momentum conditions, the localized Schottky states may be occupied, exhibit carrier trapping, or inject carriers into the GaAs conduction band. Carrier occupation and scattering from the Schottky states has not previously been reported in optical studies of this system. The scattering mechanism is observed to be active above an occupation threshold where the excited carrier density exceeds the trap density. The array of nanoparticle densities and the characterization of the relaxation pathways at multiple carrier excitation energies represents the most complete fundamental investigation of these systems to date.

  19. The Tevatron resonant Schottky detectors

    SciTech Connect

    Marriner, John; /Fermilab

    1995-09-01

    The following is a description of some studies the author made on the resonant Schottky detectors in the Tevatron. The author doubts that this document contains any information that wasn't known previously, but the hope is that this document will serve as a useful self-contained reference for users of the system.

  20. Plastic Schottky barrier solar cells

    DOEpatents

    Waldrop, James R.; Cohen, Marshall J.

    1984-01-24

    A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.

  1. Fluctuations in Schottky barrier heights

    NASA Astrophysics Data System (ADS)

    Mahan, G. D.

    1984-02-01

    A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by electrical conductivity.

  2. 670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

    NASA Technical Reports Server (NTRS)

    Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta; Rodriguez, Bryan

    2012-01-01

    GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.

  3. Superconducting YBa2Cu3O(7-delta) thin films on GaAs with conducting indium-tin-oxide buffer layers

    NASA Astrophysics Data System (ADS)

    Kellett, B. J.; Gauzzi, A.; James, J. H.; Dwir, B.; Pavuna, D.

    1990-12-01

    Superconducting YBa2Cu3O(7-delta) (YBCO) thin films have been grown in situ on GaAs with conducting indium-tin-oxide (ITO) buffer layers. Superconducting onset is about 92 K with zero resistance at 60 K. ITO buffer layers usually form Schottky-like barriers on GaAs. The YBCO film and ITO buffer layer, grown by ion beam sputter codeposition, are textured and polycrystalline with a combined room-temperature resistivity of about 1 milliohm cm.

  4. Enzyme-Based Lactic Acid Detection Using Algaas/gaas High Electron Mobility Transistor with Sb-Doped Zno Nanowires Grown on the Gate Region

    NASA Astrophysics Data System (ADS)

    Ma, Siwei; Huang, Yunhua; Liu, Hanshuo; Zhang, Xiaohui; Liao, Qingliang

    2012-08-01

    Sb-doped ZnO nanowires were synthesized via chemical vapor deposition method. Scanning electron microscopic, transmission electron microscopic, X-ray diffraction and energy dispersive spectrometer have been used to characterize the morphology and structure of the nanowires. The AlGaAs/GaAs HEMT drain-source current exhibited a fast response of about 1s when different concentrations of lactic acid solutions were added to the surface of lactate oxidase immobilized on the ZnO nanowires. The HEMT could detect a range of lactic acid concentrations from 3 pM to 30 μM. The biosensor exhibited good performance along with fast response, high sensitivity, and long-term stability. Our results demonstrate the possibility of using AlGaAs/GaAs HEMTs for lactic acid measurements and provide new further fundamental insights into the study of nanoscience and nanodevices.

  5. Alpha particle detection with GaN Schottky diodes

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Kozhukhova, E. A.; Gazizov, I. M.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.; Korulin, A. V.; Zalyetin, V. M.; Pearton, S. J.; Lee, I.-H.; Dabiran, A. M.; Chow, P. P.

    2009-11-15

    Ni/GaN Schottky diode radiation detectors were fabricated on 3-mum-thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-mum-thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was <10{sup -9} A for bias voltages necessary for detector operation, with the level of background donor doping of <10{sup 15} cm{sup -3}. With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for alpha-particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly E{sub c}-0.6 eV traps, increased in MBE grown films.

  6. Thick sodium overlayers on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Heinemann, Martina; Scheffler, Matthias

    1994-02-01

    We report density-functional theory calculations of the electronic structure, total energy, and forces for the Na adsorption on GaAs(110) using the local-density approximation of the exchange-correlation functional and ab initio pseudopotentials. Results are presented for coverages ranging from one adatom per substrate surface cell up to the thick overlayer limit. The atomic and electronic structure of the substrate is locally changed by the sodium adsorption on GaAs(110), depending on the coverage. In particular, we analyze the wave-function character of the states at the Fermi level, how it changes with sodium coverage, and we identify the formation of metal induced gap states (MIGS) at the interface. These MIGS are found to have mostly Ga dangling-bond character for all coverages. The calculated values of the p-type Schottky barrier and of the variation of photothreshold as a function of coverage are in good agreement with experimental data.

  7. Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure

    SciTech Connect

    Carlos-Pinedo, C.; Rodríguez-Vargas, I.; Martínez-Orozco, J. C.

    2014-05-15

    In this work we present the results obtained from the calculation of the level structure of a n-type delta-doped well Field Effect Transistor when is subjected to hydrostatic pressure. We study the energy level structure as a function of hydrostatic pressure within the range of 0 to 6 kbar for different Schottky barrier height (SBH). We use an analytical expression for the effect of hydrostatic pressure on the SBH and the pressure dependence of the basic parameters of the system as the effective mass m(P) and the dielectric constant ε(P) of GaAs. We found that due to the effects of hydrostatic pressure, in addition to electronic level structure alteration, the profile of the differential capacitance per unit area C{sup −2} is affected.

  8. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  9. Schottky Barrier with Liquid Metal

    NASA Astrophysics Data System (ADS)

    Modi, B. P.; Patel, K. D.

    2011-12-01

    Schottky barrier with liquid metal may provide an attractive and new opportunity to look into various aspect of the evolution of Schottky interfaces in a relatively beneficial manner [1]. Here gallium-silicon diode has been fabricated and investigated especially around the melting point of gallium. Analysis of data no barrier height exhibits an anomalous change in the sense that there is a sharp deterioration in the rectifying nature near this temperature. It is believed to be related changes the phase transition driven physical process e.g. breaking of bonds both between gallium atoms and between gallium atoms and silicon interface; change from long range to short range order in gallium. Strain relaxations at the interface etc.

  10. Influence of low-energy argon implantation on gallium arsenide Schottky barriers

    SciTech Connect

    Wang, Y.G.; Ashok, S.

    1989-03-15

    The influence of ion bombardment damage on the properties of Au/GaAs Schottky barriers has been studied with 10-keV Ar implanted into both n-type and p-type GaAs over the dose range 10/sup 12/--10/sup 15/ cm/sup -2/. Electrical characteristics determined over a wide temperature range (77--360 K) reveal a number of phenomena dictating barrier modification and carrier transport across the Au/GaAs interface: Change in Schottky barrier height due to defect levels introduced by ion damage, the very low threshold dose for barrier modification, increased series resistance, and creation of a shunt conducting path. Partial dynamic annealing of defects is also observed under high-temperature (approx. =200 /sup 0/C) implantation.

  11. First principles study of bismuth alloying effects in GaAs saturable absorber.

    PubMed

    Li, Dechun; Yang, Ming; Zhao, Shengzhi; Cai, Yongqing; Feng, Yuanping

    2012-05-01

    First principles hybrid functional calculations have been carried out to study electronic properties of GaAs with Bi alloying effects. It is found that the doping of Bi into GaAs reduces the bandgap due to the intraband level repulsions between Bi induced states and host states, and the Bi-related impurity states originate from the hybridization of Bi-6p and its nearest As-4p orbitals. With the increase of Bi concentration in GaAs, the bandgap decreases monotonously. The calculated optical properties of the undoped and Bi-doped GaAs are similar except the shift toward lower energy of absorption edge and main absorption peaks with Bi doping. These results suggest a promising application of GaBi(x)As(1-x) alloy as semiconductor saturable absorber in Q-switched or mode-locked laser.

  12. Continuous visible-light emission at room temperature in Mn-doped GaAs and Si light-emitting diodes (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Tanaka, Masaaki; Hai, Pham Nam; Anh, Le Duc

    2015-09-01

    We demonstrate visible-light electroluminescence due to d-d transitions in GaAs:Mn based light emitting diodes (LEDs) [1][2]. We prepared p+n junctions with a p+GaAs:Mn layer. At a reverse bias voltage (-3 to -6V), holes are injected from the n-type layer to the depletion layer and accelerated by the intense electric field, and excite the d electrons of Mn in the p+GaAs:Mn layer by impact excitations. We observe visible-light emission E1 = 1.89eV and E2 = 2.16eV, which are exactly the same as the 4T1 -> 6A1 and 4A2 -> 4 T1 transition energy of Mn. Furthermore, by utilizing optical transitions between the p-d hybridized orbitals of Mn atoms doped in Si, we demonstrate Si-based LEDs that continuously emit reddish-yellow visible light at room temperature. The Mn p-d hybrid states are excited by hot holes that are accelerated in the depletion layers of reverse biased Si pn junctions. Above a threshold reverse bias voltage of about -4V, our LEDs show strong visible light emission with two peaks at E1 = 1.75eV and E2 = 2.30eV, corresponding to optical transitions from the t-a (spin-down anti-bonding) states to the e- (spin-down non-bonding) states, and from the e- to the t+a (spin-up anti-bonding) states. The internal quantum efficiency of the E1 and E2 transitions is 3-4 orders of magnitude higher than that of the indirect band-gap transition [3]. [1] P. N. Hai, et al., APL 104, 122409 (2014). [2] P. N. Hai, et al., JAP 116, 113905 (2014). [3] P. N. Hai, et al., submitted.

  13. Organic Schottky diode: Characterization of traps

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Yadav, Sarita; Ghosh, Subhasis

    2015-06-01

    We have demonstrated the formation and characterization of Schottky junction in metal/organic/metal sandwiched devices based on organic molecular semiconductors, using current-voltage (J-V) and capacitance-voltage (C-V) characteristics, in particular how traps affect the device performance. Ideality factor of organic Schottky diode is always greater than unity and increases with decreasing the temperature. Diffusion coefficient has been determined from current density -voltage characteristic in Schottky diodes.

  14. Structure and electrical properties of metal contacts on GaAs

    SciTech Connect

    Liliental-Weber, Z.

    1987-07-01

    This paper reports a study of the changes in the structural and chemical properties of Au and Al contacts on GaAs at annealing temperatures where significant changes in the Schottky barrier height are found. The annealing of Au contacts above 290 /sup 0/C caused the Schottky barrier height to decrease. In contrast the Schottky barrier height of Al diodes increases upon annealing. An increase in As/Ga ratio in the GaAs under the as-deposited metal was consistently found in both cases. Upon annealing the As/Ga ratio is found to decrease for Al contacts, while it is found to increase for Au contacts. The orientation relationship of the Au contacts changed upon annealing. This was not observed with the annealed Al. The orientation relationship depended strongly on the surface preparation before the metal deposition and on the annealing environment. It was proposed that the presence of As at the interface can determine the orientation relationship between metals and GaAs.

  15. New approach to the design of Schottky barrier diodes for THz mixers

    NASA Technical Reports Server (NTRS)

    Jelenski, A.; Grueb, A.; Krozer, V.; Hartnagel, H. L.

    1992-01-01

    Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

  16. 670 GHz Schottky Diode Based Subharmonic Mixer with CPW Circuits and 70 GHz IF

    NASA Technical Reports Server (NTRS)

    Chattopadhyay, Goutam (Inventor); Schlecht, Erich T. (Inventor); Lee, Choonsup (Inventor); Lin, Robert H. (Inventor); Gill, John J. (Inventor); Sin, Seth (Inventor); Mehdi, Imran (Inventor)

    2014-01-01

    A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.

  17. A Unique 520-590 GHz Biased Subharmonically-pumped Schottky Mixer

    NASA Technical Reports Server (NTRS)

    Schlecht, Erich; Gill, John; Dengler, Robert; Lin, Robert; Tsang, Ray; Mehdi, Imran

    2007-01-01

    We report on the design and performance of a novel broadband, biased, subharmonic 520-590 GHz fix-tuned frequency mixer that utilizes planar Schottky diodes. The suspended stripline circuit is fabricated on a GaAs membrane mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise radio frequency (RF) grounding, RF coupling and dc/intermediate frequency connections. At room temperature, the mixer has a measured double sideband noise temperature of 3000 to 4000 K across the design band.

  18. Finite element analysis of skin effect resistance in submillimeter wave Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Campbell, J. S.; Wrixon, G. T.

    1982-05-01

    The skin effect resistance of GaAs Schottky barrier diodes, operating at high frequency, has been obtained using a specially developed finite element computer program. The devices were analyzed as multiplane finite element models entailing curved high-order numerically integrated isoparametric elements. These models coped easily with complexity of shape and with the near singularity associated with the geometry of the anode. A parametric study entailing twenty-six analyses was carried out, from which it was concluded that the skin effect resistance can be minimized by the correct choice of topographical features such as the extent of the ohmic contact and the anode shape.

  19. Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

    NASA Astrophysics Data System (ADS)

    Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2013-09-01

    GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, and 1.55 μm which are transmission windows of optical fibers. In this paper, we present the photoluminescence at 1.30 μm from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 μm emission is from transitions between the VAs-donor and X-acceptor pairs.

  20. Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon.

    PubMed

    Lai, Ruby A; Hymel, Thomas M; Narasimhan, Vijay K; Cui, Yi

    2016-04-13

    Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the doping level, doping type, crystallographic surface direction, and etchant solution composition. We used the doping dependence of the reaction to fabricate a novel etch stop for the reaction. PMID:27018712

  1. Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices

    NASA Astrophysics Data System (ADS)

    Huo, Pengyun; Rey-Stolle, Ignacio

    2016-06-01

    The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm-3 to 1.6 × 1019 cm-3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm-3 had Schottky-like I- V characteristics and only samples doped 1.6 × 1019 cm-3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance ( ρ c,Ti/Pd/Ag ~ 5 × 10-4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C ( ρ M,Ti/Pd/Ag ~ 2.3 × 10-6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity.

  2. Minority carrier injection and current-voltage characteristics of Schottky diodes at high injection level

    NASA Astrophysics Data System (ADS)

    Mnatsakanov, Tigran T.; Levinshtein, Michael E.; Tandoev, Alexey G.; Yurkov, Sergey N.; Palmour, John W.

    2016-07-01

    Transport phenomena in Schottky diodes are analyzed at high injection levels of minority carriers. It is shown that the correct description of these phenomena requires that the mode of diffusion stimulated by the quasi-neutral drift (DSQD) should be considered. An analytical expression for current-voltage characteristics of a Schottky diode at high injection levels is derived. The expression predicts a seemingly paradoxical result: the higher the base doping level, the higher the voltage drop across a diode at the same current density. The analytical results are confirmed by computer simulations. The results may be important for analyses of SiC Junction Barrier Schottky (JBS) diodes at very high current densities (surge current mode).

  3. Planar GaAs diodes for THz frequency mixing applications

    NASA Technical Reports Server (NTRS)

    Bishop, William L.; Crowe, Thomas W.; Mattauch, Robert J.; Dossal, Hasan

    1992-01-01

    Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.

  4. Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs

    NASA Astrophysics Data System (ADS)

    Sato, Kenji; Ikoma, Hideaki

    1993-02-01

    Internal photoemission and X-ray photoelectron spectroscopic (XPS) measurements were performed to investigate the effect of sulfur passivation on the GaAs surface and the degradation of the GaAs surface exposed to air ambient after the passivation. The reverse bias dependence of the Schottky barrier height was very small in the as-sulfur-treated sample and was mainly explained by the image force lowering effect. However, it increased as this sample was exposed to air, indicating an increase in the interface state density. The XPS studies showed that both the Ga and As oxides were hardly observed in the sulfur-passivated samples. This indicates that sulfur passivation strongly suppresses oxidation of GaAs. However, a small amount of elemental arsenic was observed with a trace of the As suboxides (such as AsO) after exposure to air and it increased as the exposure time was increased. These results were probably correlated with the increase in the bias dependence of the Schottky barrier height in samples exposed to air after the passivation. Thermal oxidation of GaAs was found to be retarded by sulfur passivation until oxidation time was about 10 min at 300°C. A possible model of suppression of oxidation by sulfur passivation was also discussed.

  5. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

    PubMed Central

    Penumatcha, Ashish V.; Salazar, Ramon B.; Appenzeller, Joerg

    2015-01-01

    Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses. PMID:26563458

  6. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

    PubMed

    Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

    2015-01-01

    Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses. PMID:26563458

  7. Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Ernest, F. P.; Stirn, R. J.

    1978-01-01

    Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

  8. Interface demarcation in GaAs by current pulsing

    NASA Technical Reports Server (NTRS)

    Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

    1990-01-01

    GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

  9. Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.

    PubMed

    Danilov, Yuri A; Vikhrova, Olga V; Kudrin, Alexey V; Zvonkov, Boris N

    2012-06-01

    The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.

  10. Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors.

    PubMed

    Martin, Dominik; Heinzig, Andre; Grube, Matthias; Geelhaar, Lutz; Mikolajick, Thomas; Riechert, Henning; Weber, Walter M

    2011-11-18

    This work elucidates the role of the Schottky junction in the electronic transport of nanometer-scale transistors. In the example of Schottky barrier silicon nanowire field effect transistors, an electrical scanning probe technique is applied to examine the charge transport effects of a nanometer-scale local top gate during operation. The results prove experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on band bending at the Schottky barriers will be shown.

  11. Epitaxial Fe on free-standing GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Mingze; Darbandi, Ali; Majumder, Sarmita; Watkins, Simon; Kavanagh, Karen

    2016-07-01

    Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.

  12. Silicon-based Coulomb blockade thermometer with Schottky barriers

    NASA Astrophysics Data System (ADS)

    Tuboltsev, V.; Savin, A.; Rogozin, V. D.; Räisänen, J.

    2014-04-01

    A hybrid Coulomb blockade thermometer (CBT) in form of an array of intermittent aluminum and silicon islands connected in series via tunnel junctions was fabricated on a thin silicon-on-insulator (SOI) film. Tunnel barriers in the micrometer size junctions were formed by metal-semiconductor Schottky contacts between aluminium electrodes and heavily doped silicon. Differential conductance through the array vs. bias voltage was found to exhibit characteristic features of competing thermal and charging effects enabling absolute temperature measurements over the range of ˜65 to ˜500 mK. The CBT performance implying the primary nature of the thermometer demonstrated for rather trivial architecture attempted in this work paves a route for introduction of Coulomb blockade thermometry into well-developed contemporary SOI technology.

  13. Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

    2010-01-01

    This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

  14. A 492 GHz cooled Schottky receiver for radio-astronomy

    NASA Technical Reports Server (NTRS)

    Hernichel, J.; Schieder, R.; Stutzki, J.; Vowinkel, B.; Winnewisser, G.; Zimmermann, Peter

    1992-01-01

    We developed a 492 GHz cooled GaAs Schottky receiver driven by a solid state local oscillator with a DSB noise temperature of 550 K measured at the telescope. The receiver-bandwidth is approx. equal to 1.0 GHz. Quasi-optical mirrors focus the sky and local oscillator radiation into the mixer. Stability analysis via the Allan variance method shows that the total system including a 1 GHz bandwidth acousto-optical spectrometer built in Cologne allows integration times up to 100 sec per half switching cycle. We successfully used the receiver at the KOSMA 3 m telescope on Gornergrat (3150m) located in the central Swiss Alps near Zermatt during January-February 1992 for observations of the 492 GHz, (CI) (3)P1 to (3)P0 fine structure line in several galactic sources. These observations confirm that Gornergrat is an excellent winter submillimeter site in accordance with previous predictions based on the atmospheric opacity from KOSMA 345 GHz measurements.

  15. A 492 GHz cooled Schottky receiver for radio-astronomy

    NASA Astrophysics Data System (ADS)

    Hernichel, J.; Schieder, R.; Stutzki, J.; Vowinkel, B.; Winnewisser, G.; Zimmermann, Peter

    We developed a 492 GHz cooled GaAs Schottky receiver driven by a solid state local oscillator with a DSB noise temperature of 550 K measured at the telescope. The receiver-bandwidth is approx. equal to 1.0 GHz. Quasi-optical mirrors focus the sky and local oscillator radiation into the mixer. Stability analysis via the Allan variance method shows that the total system including a 1 GHz bandwidth acousto-optical spectrometer built in Cologne allows integration times up to 100 sec per half switching cycle. We successfully used the receiver at the KOSMA 3 m telescope on Gornergrat (3150m) located in the central Swiss Alps near Zermatt during January-February 1992 for observations of the 492 GHz, (CI) (3)P1 to (3)P0 fine structure line in several galactic sources. These observations confirm that Gornergrat is an excellent winter submillimeter site in accordance with previous predictions based on the atmospheric opacity from KOSMA 345 GHz measurements.

  16. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  17. Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

    PubMed

    Kim, Hong-Sik; Patel, Malkeshkumar; Park, Hyeong-Ho; Ray, Abhijit; Jeong, Chaehwan; Kim, Joondong

    2016-04-01

    Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.

  18. Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

    PubMed

    Kim, Hong-Sik; Patel, Malkeshkumar; Park, Hyeong-Ho; Ray, Abhijit; Jeong, Chaehwan; Kim, Joondong

    2016-04-01

    Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects. PMID:26971560

  19. Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sethi, S.; Bhattacharya, P. K.

    1996-03-01

    We have studied the properties of molecular beam epitaxially (MBE)-grown Erdoped III-V semiconductors for optoelectronic applications. Optically excited Er3+ in insulating materials exhibits optical emission chiefly around 1.54 μm, in the range of minimum loss in silica fiber. It was thought, therefore, that an electrically pumped Er-doped semiconductor laser would find great applicability in fiber-optic communication systems. Exhaustive photoluminescence (PL) characterization was conducted on several of As-based III-V semiconductors doped with Er, on bulk as well as quantum-well structures. We did not observe any Errelated PL emission at 1.54 μm for any of the materials/structures studied, a phenomenon which renders impractical the realization of an Er-doped III-V semiconductor laser. Deep level transient spectroscopy studies were performed on GaAs and AlGaAs co-doped with Er and Si to investigate the presence of any Er-related deep levels. The lack of band-edge luminescence in the GaAs:Er films led us to perform carrier-lifetime measurements by electro-optic sampling of photoconductive transients generated in these films. We discovered lifetimes in the picosecond regime, tunable by varying the Er concentration in the films. We also found the films to be highly resistive, the resistivity increasing with increasing Er-concentration. Intensive structural characterization (double-crys-tal x-ray and transmission electron microscopy) performed by us on GaAs:Er epilayers indicates the presence of high-density nanometer-sized ErAs precipitates in MBE-grown GaAs:Er. These metallic nanoprecipitates probably form internal Schottky barriers within the GaAs matrix, which give rise to Shockley-Read-Hall recombination centers, thus accounting for both the high resistivities and the ultrashort carrier lifetimes. Optoelectronic devices fabricated included novel tunable (in terms of speed and responsivity) high-speed metal-semiconductor-metal (MSM) photodiodes made with Ga

  20. a Study of Erbium Doped Iii-V Semiconductors for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Sethi, Sanjay

    1995-11-01

    This dissertation presents work done on materials and novel devices made with MBE-grown Er-doped III-V semiconductors for optoelectronic applications. Optically-excited Er ^{3+} in insulating materials exhibits optical emission chiefly around 1.54 mum, in the range of minimum loss in silica fiber. It was thought, therefore, that an electrically -pumped Er-doped semiconductor laser would find great applicability in fiber-optic communication systems. Exhaustive photoluminescence (PL) characterization was conducted on the entire gamut of As-based III-V semiconductors doped with Er, on bulk as well as quantum-well structures. We did not observe any Er-related PL emission at 1.54 μm for any of the materials/structures studied, a phenomenon which renders impractical the realization of an Er-doped III-V semiconductor laser. Deep level transient spectroscopy studies were performed on GaAs and AlGaAs co-doped with Er and Si to investigate the presence of any Er-related deep levels. The lack of band-edge luminescence in the GaAs:Er films led us to perform carrier-lifetime measurements by electro-optic sampling of photoconductive transients generated in these films. We discovered lifetimes in the picosecond regime, tunable by varying the Er concentration in the films. We also found the films to be highly resistive, the resistivity increasing with increasing Er-concentration. Intensive structural characterization (Double -crystal X-ray and TEM) performed by us on GaAs:Er epilayers indicates the presence of high-density nanometer-sized ErAs precipitates in MBE-grown GaAs:Er. These metallic nanoprecipitates probably form internal Schottky barriers within the GaAs matrix, which give rise to Shockley-Read -Hall recombination centers, thus accounting for both the high resistivities and the ultrashort carrier lifetimes. Optoelectronic devices fabricated included novel tunable (in terms of speed and responsivity) high-speed metal-semiconductor-metal (MSM) photodiodes made with Ga

  1. Schottky barrier diode and method thereof

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid (Inventor); Franz, David (Inventor)

    2008-01-01

    Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

  2. Reliability of Cascaded THz Frequency Chains with Planar GaAs Circuits

    NASA Technical Reports Server (NTRS)

    Maiwald, Frank; Schlecht, Erich; Lin, Robert; Ward, John; Pearson, John; Siegel, Peter; Mehdi, Imran

    2004-01-01

    Planar GaAs Schottky diodes will be utilized for all of the LO chains on the HIPI instrument for the Herschel Space Observatory. A better understanding of device degradation mechanisms is desirable in order to specify environmental and operational conditions that do not reduce device life times. Failures and degradation associated with ESD (Electrostatic Discharge), high temperatures, DC currents and RF induced current and heating have been investigated. The goal is to establish a procedure to obtain the safe operating range for a given frequency multiplier.

  3. Bias control of long term radiation-induced transients in GaAs MESFETs

    NASA Astrophysics Data System (ADS)

    Casey, R. H.; Herman, W. N.; Lacombe, D. J.; Ragonese, L. J.; Immorlica, A.

    1988-12-01

    The effect of guard-ring bias and self-bias on radiation-induced long-term transients in GaAs D-MESFETs was measured for dose rates up to 1 Trad(GaAs)/sec. Results are presented for both ohmic and Schottky guard rings, with the substrate-bottom grounded as well as separately biased. Significant reduction in recovery times and transient amplitudes suggests that these are viable radiation-hardening techniques, allowing less dependence on the device fabrication process.

  4. Ohmic contacts to GaAs for high-temperature device applications

    NASA Technical Reports Server (NTRS)

    Anderson, W. T., Jr.; Christou, A.; Giuliani, J. F.; Dietrich, H. B.

    1981-01-01

    Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

  5. Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

    NASA Astrophysics Data System (ADS)

    Jena, B.; Pradhan, K. P.; Dash, S.; Mishra, G. P.; Sahu, P. K.; Mohapatra, S. K.

    2015-09-01

    In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (φM) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed. Undoped GAA MOSFET is a radical invention as it introduces a new direction for transistor scaling. In conventional MOSFET, generally the channel doping concentration is very high to provide high on-state current, but in contrary it causes random dopant fluctuation and threshold voltage variation. So, the undoped nature of GAA MOSFET solves the above complications. Hence, we have analyzed the electrical characteristics as well as the analog/RF performances of undoped GAA MOSFET through Sentaurus device simulator.

  6. Schottky contact on ultra-thin silicon nanomembranes under light illumination.

    PubMed

    Song, Enming; Si, Wenping; Cao, Ronggen; Feng, Ping; Mönch, Ingolf; Huang, Gaoshan; Di, Zengfeng; Schmidt, Oliver G; Mei, Yongfeng

    2014-12-01

    By repeating oxidation and subsequent wet chemical etching, we produced ultra-thin silicon nanomembranes down to 10 nm based on silicon-on-insulator structures in a controllable way. The electrical property of such silicon nanomembranes is highly influenced by their contacts with metal electrodes, in which Schottky barriers (SBs) can be tuned by light illumination due to the surface doping. Thermionic emission theory of carriers is applied to estimate the SB at the interface between metal electrodes and Si nanomembranes. Our work reveals that the Schottky contacts with Si nanomembranes can be influenced by external stimuli (like light luminescence or surface state) more heavily compared to those in the thicker ones, which implies that such ultra-thin-film devices could be of potential use in optical detectors.

  7. Processing and characterization of epitaxial GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Wu, X.; Peltola, T.; Arsenovich, T.; Gädda, A.; Härkönen, J.; Junkes, A.; Karadzhinova, A.; Kostamo, P.; Lipsanen, H.; Luukka, P.; Mattila, M.; Nenonen, S.; Riekkinen, T.; Tuominen, E.; Winkler, A.

    2015-10-01

    GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 - 130 μm thick epitaxial absorption volume. Thick undoped and heavily doped p+ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 μm / h. The GaAs p+/i/n+ detectors were characterized by Capacitance Voltage (CV), Current Voltage (IV), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage (Vfd) of the detectors with 110 μm epi-layer thickness is in the range of 8-15 V and the leakage current density is about 10 nA/cm2. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

  8. A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors

    SciTech Connect

    Biggeri, U.; Borchi, E.; Bruzzi, M.

    1998-06-01

    Silicon p{sup +}n junctions irradiated with neutron and proton fluences in the range 5 {times} 10{sup 11}--4 {times} 10{sup 15} cm{sup {minus}2} and non-irradiated Semi Insulating (SI) LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N{sub t} of the main radiation-induced deep traps (Et {approx} 0.44--0.54 eV) is found to increase as N{sub t} {alpha} f achieving values up to 5 {times} 10{sup 15} cm{sup {minus}3} and a mobility saturation at 100 cm{sup 2}/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested.

  9. Sn-seeded GaAs nanowires grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Sun, Rong; Vainorius, Neimantas; Jacobsson, Daniel; Pistol, Mats-Erik; Lehmann, Sebastian; Dick, Kimberly A.

    2016-05-01

    It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p-n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities.

  10. Sn-seeded GaAs nanowires grown by MOVPE.

    PubMed

    Sun, Rong; Vainorius, Neimantas; Jacobsson, Daniel; Pistol, Mats-Erik; Lehmann, Sebastian; Dick, Kimberly A

    2016-05-27

    It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p-n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities. PMID:27087548

  11. Sn-seeded GaAs nanowires grown by MOVPE.

    PubMed

    Sun, Rong; Vainorius, Neimantas; Jacobsson, Daniel; Pistol, Mats-Erik; Lehmann, Sebastian; Dick, Kimberly A

    2016-05-27

    It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p-n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities.

  12. Simulation and comparative study of tunneling field effect transistors with dopant-segregated Schottky source/drain

    NASA Astrophysics Data System (ADS)

    Zhang, Yi Bo; Sun, Lei; Xu, Hao; Han, Jing Wen

    2016-04-01

    Dopant-segregated Schottky source/drain tunneling field effect transistors (STFET) are investigated in this paper. The working mechanisms of STFET and the influence of device parameters are studied with Synopsys Sentaurus. Schottky source/drain MOSFETs possess several advantages over conventional MOSFETs, and dopant segregation can be feasibly achieved within current silicidation process. With dopant segregation, highly doped regions can be obtained after silicidation, which is necessary for band-to-band tunneling. With proper parameter setting, STFET can achieve comparable performance as TFET. High segregation doping for STFET is required to increase band-to-band tunneling probability and suppress bipolar behaviors. Increasing the electron barrier height at source side helps to provide larger drive current and higher on/off ratio. It is also found that STFET’s on-state performance is irrelevant to the segregation length when the segregation length is larger than a certain value. Furthermore, STFET is also insensitive to the Schottky barrier at drain side when the Schottky barrier at source side is fixed, which would relax the requirement for source/drain fabrication.

  13. Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process

    NASA Astrophysics Data System (ADS)

    Okada, Yoshitaka; Iuchi, Yoshimasa; Kawabe, Mitsuo; Harris, James S.

    2000-07-01

    The basic properties of GaAs oxide generated by atomic force microscope (AFM) tip-induced nano-oxidation process have been investigated. The chemical analysis of the AFM tip-generated GaAs oxide was performed by using scanning microprobe x-ray photoelectron spectroscopy, and the main constituents of GaAs anodic oxide were determined to be Ga2O3 and As2O3. The electrical characterization showed that the electron transport across a GaAs oxide nanodot of ˜5.7 nm thickness, from a doped n+-Si tip into the n+-GaAs substrate follows the Fowler-Nordheim tunneling mechanism over a range of applied bias. Further, the tip-generated GaAs oxide nanodots were found to withstand moderate thermal treatments, but some volume reduction was observed.

  14. Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties

    SciTech Connect

    Golubok, A. O.; Samsonenko, Yu. B.; Mukhin, I. S. Buravlev, A. D.; Cirlin, G. E.

    2011-08-15

    A method for the formation of single GaAs semiconductor nanowhiskers and their assemblies on the tip of a chemically etched tungsten needle by molecular-beam epitaxy is proposed. The focused-ionbeam technique was used to separate a single nanowhisker. Electronic properties of single nanowhiskers were studied by elastic tunneling spectroscopy in ultrahigh vacuum. The band gap and the doping level of GaAs whiskers were determined using the current-voltage characteristics obtained from these measurements.

  15. The nature of electrical interaction of Schottky contacts

    SciTech Connect

    Torkhov, N. A.

    2011-08-15

    Electrical interaction between metal-semiconductor contacts combined in a diode matrix with a Schottky barrier manifests itself in an appreciable variation in their surface potentials and static current-volt-characteristics. The necessary condition for appearance of electrical interaction between such contacts consists in the presence of a peripheral electric field (a halo) around them; this field propagates to a fairly large distances (<30 {mu}m). The sufficient condition is the presence of regions where the above halos overlap. It has been shown that variation in the surface potential and the current-voltage characteristics of contacts occurs under the effect of the intrinsic electric field of the contact's periphery and also under the effect of an electric field at matrix periphery; the latter field is formed as a result of superposition of electric fields of halos which form its contacts. The degree of the corresponding effect is governed by the distance between contacts and by the total charge of the space charge regions for all contacts of the matrix: their number, sizes (diameter D{sub i,j}), concentration of doping impurities in the semiconductor N{sub D}, and physical nature of a metal-semiconductor system with a Schottky barrier (with the barrier height {phi}{sub b}). It is established that bringing the contacts closer leads to a relative decrease in the threshold value of the 'dead' zone in the forward current-voltage characteristics, an increase in the effective height of the barrier, and an insignificant increase in the nonideality factor. An increase in the total area of contacts (a total electric charge in the space charge region) in the matrix brings about an increase in the threshold value of the 'dead' zone, a relative decrease in the effective barrier height, and an insignificant increase in the ideality factor.

  16. Using Atom-Probe Tomography to Understand Zn O ∶Al /SiO 2/Si Schottky Diodes

    NASA Astrophysics Data System (ADS)

    Jaramillo, R.; Youssef, Amanda; Akey, Austin; Schoofs, Frank; Ramanathan, Shriram; Buonassisi, Tonio

    2016-09-01

    We use electronic transport and atom-probe tomography to study Zn O ∶Al /SiO 2/Si Schottky diodes on lightly doped n - and p -type Si. We vary the carrier concentration in the ZnO ∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO ∶Al at the junction is likely to be metallic even when the bulk of the ZnO ∶Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. This implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.

  17. An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications

    NASA Astrophysics Data System (ADS)

    Graham, A. P.; Jay, T.; Jakschik, S.; Knebel, S.; Weber, W.; Schröder, U.; Mikolajick, T.

    2012-06-01

    An investigation of the electrical properties of the interface between nano-crystalline, pyrolytic carbon, and silicon is presented. We have deposited conductive carbon films on silicon substrates by the pyrolysis of ethene and structured them into Schottky diodes in order to evaluate the electrical properties of the interface. The results show that the Schottky barrier to n-doped silicon is 0.46 eV, whereas for p-doped silicon, it is 0.66 eV. The carbon to n-type silicon barrier height is comparable to the values for metal silicide contacts in commercial devices. The results imply that no interfacial layer is formed and show the absence of Fermi-level pinning.

  18. Formation and properties of porous GaAs

    SciTech Connect

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  19. The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

    NASA Astrophysics Data System (ADS)

    Tong, Xiaodong; Li, Qian; An, Ning; Wang, Wenjie; Deng, Xiaodong; Zhang, Liang; Liu, Haitao; Zeng, Jianping; Li, Zhiqiang; Tang, Hailing; Xiong, Yong-Zhong

    2015-11-01

    A planar Schottky barrier diode with the designed Schottky contact area of approximately 3 μm2 is developed on gallium arsenide (GaAs) material. The measurements of the developed planar Schottky barrier diode indicate that the zero-biased junction capacitance Cj0 is 11.0 fF, the parasitic series resistance RS is 3.0 Ω, and the cut off frequency fT is 4.8 THz. A monolithically integrated fourth subharmonic mixer with this diode operating at the radio frequency (RF) signal frequency of 0.34 THz with the chip area of 0.6 mm2 is implemented. The intermediate frequency (IF) bandwidth is from DC to 40 GHz. The local oscillator (LO) bandwidth is 37 GHz from 60 to 97 GHz. The RF bandwidth is determined by the bandwidth of the on chip antenna, which is 28 GHz from 322 to 350 GHz. The measurements of the mixer demonstrated a conversion loss of approximately 51 dB.

  20. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

    PubMed

    Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

    2016-03-01

    Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

  1. GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

    SciTech Connect

    Cardozo, Benjamin Lewin

    2004-01-01

    High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 1013 cm-3, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended optical response was not detected, most likely due to the high compensation of the commercially grown GaAs absorbing layer, which restricts the depletion width of the device.

  2. Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates

    NASA Astrophysics Data System (ADS)

    Chang, Hu-Dong; Sun, Bing; Xue, Bai-Qing; Liu, Gui-Ming; Zhao, Wei; Wang, Sheng-Kai; Liu, Hong-Gang

    2013-07-01

    In0.4Ga0.6As channel metal—oxide—semiconductor field-effect transistors (MOSFETs) with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs (gate length 2 μm) with an In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/(V·s).

  3. A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips

    NASA Technical Reports Server (NTRS)

    Bruston, J.; Maestrini, A.; Pukala, D.; Martin, S.; Nakamura, B.; Mehdi, I.

    2001-01-01

    Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

  4. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

    PubMed

    Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C

    2016-12-01

    Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact. PMID:27071678

  5. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

    PubMed

    Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C

    2016-12-01

    Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

  6. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method

    NASA Astrophysics Data System (ADS)

    Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C.

    2016-04-01

    Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

  7. Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

    SciTech Connect

    Malinowski, Pawel E.; Mertens, Robert; Van Hoof, Chris; Duboz, Jean-Yves; Semond, Fabrice; Frayssinet, Eric; Verhoeve, Peter; Giordanengo, Boris; BenMoussa, Ali

    2011-04-04

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection.

  8. Controllable resistive switching in Au/Nb:SrTiO3 microscopic Schottky junctions

    NASA Astrophysics Data System (ADS)

    Wang, Yuhang; Shi, Xiaolan; Zhao, Kehan; Xie, Guanlin; Huang, Siyu; Zhang, Liuwan

    2016-02-01

    The reversible resistive switching effect at oxide interface shows promising applications in information storage and artificial intelligence. However, the microscopic switching mechanism is still elusive due to the difficulty of direct observation of the electrical and chemical behavior at the buried interface, which becomes a major barrier to design reliable, scalable, and reproducible devices. Here we used a gold-coated AFM tip as a removable electrode to investigate the resistive switching effect in a microscopic Au/Nb:SrTiO3 Schottky junction. We found that unlike the inhomogeneous random resistive switching in the macroscopic Schottky junctions, the high and low resistance states can be reversibly switched in a controllable way on the Nb-doped SrTiO3 surface by the conductive tip. The switching between the high and low resistance states in vacuum is accompanied by the reversible shift of the surface Fermi level. We indicate that the transfer of the interface oxygen ion in a double-well potential is responsible for the resistive switching in both macroscopic and microscopic Schottky junctions. Our findings provide a guide to optimize the key performance parameters of a resistive switching device such as operation voltage, switching speed, on/off ratio, and state retention time by proper electrode selection and fabrication strategy.

  9. Investigation of the optical and electrical properties of p-type porous GaAs structure

    NASA Astrophysics Data System (ADS)

    Saghrouni, H.; Missaoui, A.; Hannachi, R.; Beji, L.

    2013-12-01

    Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current-voltage I(V) characteristics of metal-semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined.

  10. Epitaxial two-dimensional nitrogen atomic sheet in GaAs

    SciTech Connect

    Harada, Yukihiro Yamamoto, Masuki; Baba, Takeshi; Kita, Takashi

    2014-01-27

    We have grown an epitaxial two-dimensional nitrogen (N) atomic sheet in GaAs by using the site-controlled N δ-doping technique. We observed a change of the electronic states in N δ-doped GaAs from the isolated impurity centers to the delocalized impurity band at 1.49 eV with increasing N-doping density. According to the excitation-power- and temperature-dependent photoluminescence (PL) spectra, the emission related to localized levels below the impurity band edge was dominant at low excitation power and temperature, whereas the effects of the localized levels can be neglected by increasing the excitation power and temperature. Furthermore, a clear Landau shift of the PL-peak energy was observed at several Tesla in the Faraday configuration, in contrast to the case in the impurity limit.

  11. Plastic Schottky-barrier solar cells

    DOEpatents

    Waldrop, J.R.; Cohen, M.J.

    1981-12-30

    A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

  12. Liquid junction schottky barrier solar cell

    DOEpatents

    Williams, Richard

    1980-01-01

    A mixture of ceric ions (Ce.sup.+4) and cerous ions (Ce.sup.+3) in an aqueous electrolyte solution forms a Schottky barrier at the interface between an active region of silicon and the electrolyte solution. The barrier height obtained for hydrogenated amorphous silicon using the Ce.sup.+4 /Ce.sup.+3 redox couple is about 1.7 eV.

  13. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    SciTech Connect

    Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki; Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi; Kuboya, Shigeyuki; Onabe, Kentaro; Katayama, Ryuji

    2013-12-04

    We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

  14. Characterization of thermally oxidized Ta/GaAs Schottky barrier structures prepared by low energy RF sputtering with X-ray photoemission, TEM and optical transmittance measurements

    NASA Astrophysics Data System (ADS)

    Gladkov, P.; Varblianska, K.; Marinova, Ts.; Krastev, V.; Stoemenos, J.

    Schottky barrier Ta 2O 5/Ta/GaAs structures produced by RF magnetron sputtering of Ta onto "in situ" sputter etched GaAs substrates are the subject of the present investigation. The tantalum oxides formed directly during the process of thermal recovery of the structures contain predominantly Ta 2O 5 according to XPS data. The component distribution in these structures, formed under optimum recovery conditions with respect to the Schottky barrier parameters ( ΦB and η) has been studied by XPS and TEM. The applied conditions for thermal recovery and simultaneous oxidation are: isothermal annealing at temperatures 400-420°C for 100 min in an ambient of dry air and starting layers of 40 nm RF-sputtered Ta. The partial oxidation of the Ta layer during the heat treatment results in the formation of a thin layer of Ta 2O 5 on the top of the structure, followed by two layers: a mixture of Ta 2O 5 + Ta and a thin Schottky contact predominantly consisting of Ta. The total optical transmittance in the spectral range 0.7-1.1 μ of these three successive layers is ≥ 0.7. This result justifies the potential application of these structures in the creation of Schottky photodiodes in the visible and near-IR. It is established as well that at T ≥ 400°C GaAs and Ta start interacting resulting in the formation of intermetallic compounds of the type: Ta 5Ga, Ta 5Ga 3, and TaGa 3.

  15. Design and simulation of an electrically pumped Schottky-junction-based plasmonic amplifier.

    PubMed

    Livani, Abdolber Mallah; Kaatuzian, Hassan

    2015-03-20

    We have investigated an amplifier which operates on surface plasmon polaritons (SPPs). A semiconductor is considered instead of dielectric since its interface with metal can support transverse-magnetic-polarized SPP propagation. A T-shaped cross section for the analyzed waveguide is considered. Metal-semiconductor interface conditions in particular can be regarded as a Schottky junction that has the capability of being pumped electrically. So compensation of propagation loss imposed by metal is possible and beyond that, amplification occurs. This configuration has advantages such as a simple fabrication process and compact size. This scheme has been implemented previously in 3.16, 1.7, and 0.8 μm for increasing the propagation length of the SPP but here, the free-space wavelength of 1.55 μm is considered for designing a plasmonic amplifier. This wavelength is selected because this is the most used wavelength in fiber-optic telecommunications due to its ultralow attenuation in silica. However, designing such an amplifier with too many effects that arise in a Schottky junction may be an extremely difficult process. So simplification, which regards essential effects and ignores nonimportant ones, is included. In this work, gold is considered as the metal and n+-doped In0.53Ga0.47As as the semiconductor to form a Schottky junction. The semiconductor has a doping concentration of 1×1018  cm-3. In forward bias of 1.25 V, the gain coefficient of the SPP mode is estimated up to 337  cm-1 which corresponds to 14.62 dB power gain for a 100 μm long amplifier. PMID:25968496

  16. Fabrication of Schottky Junction Between Au and SrTiO3

    NASA Astrophysics Data System (ADS)

    Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

    2001-05-01

    A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

  17. Strain effect of multilayer FeN structure on GaAs substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaowei; Ji, Nian; Lauter, Valeria; Ambaye, Hailemariam; Wang, Jian-Ping

    2013-05-01

    Overly doped FeN multilayer structure on GaAs substrate was fabricated. After the post-annealing process, FeN martensite in each Fe/FeN layer formed partially chemically ordered Fe16N2, which was observed by X-ray diffraction. To detect the saturation magnetization (Ms) depth profile, polarized neutron reflectivity was conducted. Fe/FeN layer showed a significant improvement of Ms for each layer compared to Ms of Fe. More importantly, different FeN layers showed different Ms according to the physical distance to the substrate GaAs. The most enhanced Ms (exceeding the limit of Fe65Co35 Ms) observed at the bottom part of the film, consistent with previous reports, should be attributed to the lattice strain by GaAs substrate. In order to detect the lattice constant, In-plane X-ray Diffraction was done and a large in-plane lattice constant was determined.

  18. A modified horizontal Bridgman technique without arsenic zone for growth of GaAs crystals

    NASA Astrophysics Data System (ADS)

    Chen, T. P.; Guo, Y. D.; Huang, T. S.

    1989-03-01

    A modified two temperature zone horizontal Bridgman system without arsenic zone has been developed for the growth of GaAs single crystal. In this process, a short quartz ampoule, which was just long enough for sealing off the boat, was used. With a short quartz ampoule and a large charge of polycrystalline GaAs, the arsenic loss due to the dissociation of the melt was very small. The sticking between the boat and the crystal was eliminated; therefore, the crystal yield was greatly enhanced. The possible reasons for the elimination of the boat sticking and the stoichiometry control in this process are discussed. High quality Si-doped GaAs crystals with 2 inches in diameter and 30 cm in length have been routinely grown. The optoelectronic devices fabricated with these wafers showed better performance than commercial products.

  19. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Dutta, P.; Rathi, M.; Zheng, N.; Gao, Y.; Yao, Y.; Martinez, J.; Ahrenkiel, P.; Selvamanickam, V.

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ˜107 cm-2. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm2/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  20. Laterally stacked Schottky diodes for infrared sensor applications

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon (Inventor)

    1991-01-01

    Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

  1. Si/IrSi3 Schottky-Barrier Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Si/IrSi or Si/IrSi3 Schottky-barrier detector fabricated by stoichiometric codeposition of Ir and Si on p Si substrate. Includes p+ substrate contact, silicide electrode, and n Si guard ring, which suppresses leakage around periphery of silicide electrode. Part of continuing effort to develop imaging arrays of Schottky-barrier detectors operating at far-infrared wavelengths.

  2. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

    NASA Astrophysics Data System (ADS)

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-05-01

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

  3. Properties and use of cycled grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si layers for high-conductance GaAs tunnel junctions

    SciTech Connect

    Venkatasubramanian, R.; Timmons, M.L.; Colpitts, T.S. ); Asher, S. )

    1992-09-01

    Heavily doped GaAs layers for high conductance GaAs tunnel junctions have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) using Zn as the dopant for the p[sup +] regions and either Se or Si as the dopant for the n[sup +] regions. At a growth temperature of 700[degrees]C using a [open quotes]cycled[close quotes] growth technique for the Zn-doped p[sup ++]-GaAs layer, both the conductance and the peak current density of the tunnel diode has been increased by a factor of [approximately]65 compared to a tunnel junction with a continuously grown Zn-doped p[sup +]-GaAs. The conductance of the tunnel junction, which is maximized at a growth temperature of 650[degrees]C using cycled growth, is comparable to the best reported values for tunnel junctions grown by molecular beam epitaxy. Cycled growths for n[sup +] Se-doped regions are found to reduce the conductance of a tunnel junction by more than two orders of magnitude. However, cycled growth for the n[sup +]-GaAs regions with Si doping show no conductance degradation. A model based on incorporation sites of these dopants during OMVPE growth of GaAs is presented to account for the experimental observations. 14 refs., 7 figs., 4 tabs.

  4. Field-effect transistors based on Si:P nanowires with axially graded doping

    NASA Astrophysics Data System (ADS)

    Barreda, Jorge; Keiper, Timothy; Zhang, Mei; Xiong, Peng

    2014-03-01

    Phosphorus-doped Si nanowires (NWs) have been synthesized via the vapor-liquid-solid method. Local electrical transport measurements along the length of the NWs reveal a systematic reduction of the electrical conductivity in the growth direction. These results, along with structural characterizations by SEM and AFM, point to a graded doping profile along the length of the NWs as the origin of the spatial variation of the electronic properties. Due to the inherent doping gradient, Cr/Au and Cr/Ag contacts on the NWs evolve systematically from ohmic contacts on the highly-doped side (where growth starts) to Schottky junctions on the lower-doped side (where growth ends). Field-effect transistors (FETs) have been fabricated from individual as-grown Si NWs. By patterning a series of electrodes along the length of a NW, both channel-limited and Schottky barrier-limited devices were obtained from a single NW. In particular, by using two electrodes located at opposite ends of a NW, FETs limited by a single Schottky junction were consistently realized. These devices, in which the Schottky junction acts as the drain terminal and the ohmic contact as the source terminal, exhibit excellent gate modulation due to the tuning of the Schottky barrier.

  5. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    NASA Astrophysics Data System (ADS)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  6. Determination of carrier concentration and compensation microprofiles in GaAs

    NASA Technical Reports Server (NTRS)

    Jastrzebski, L.; Lagowski, J.; Walukiewicz, W.; Gatos, H. C.

    1980-01-01

    Simultaneous microprofiling of semiconductor free carrier, donor, and acceptor concentrations was achieved for the first time from the absolute value of the free carrier absorption coefficient and its wavelength dependence determined by IR absorption in a scanning mode. Employing Ge- and Si-doped melt-grown GaAs, striking differences were found between the variations of electron concentration and those of ionized impurity concentrations. These results showed clearly that the electronic characteristics of this material are controlled by amphoteric doping and deviations from stoichiometry rather than by impurity segregation.

  7. Identification of oxygen-related midgap level in GaAs

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Lin, D. G.; Gatos, H. C.; Aoyama, T.

    1984-01-01

    An oxygen-related deep level ELO was identified in GaAs employing Bridgman-grown crystals with controlled oxygen doping. The activation energy of ELO is almost the same as that of the dominant midgap level: EL2. This fact impedes the identification of ELO by standard deep level transient spectroscopy. However, it was found that the electron capture cross section of ELO is about four times greater than that of EL2. This characteristic served as the basis for the separation and quantitative investigation of ELO employing detailed capacitance transient measurements in conjunction with reference measurements on crystals grown without oxygen doping and containing only EL2.

  8. Crystal growth of completely dislocation-free and striation-free GaAs

    NASA Astrophysics Data System (ADS)

    Kohda, H.; Yamada, K.; Nakanishi, H.; Kobayashi, T.; Osaka, J.

    1985-06-01

    Completely dislocation-free and striation-free, semi-insulating GaAs crystals with 50 mm diameter were grown by means of the newly developed Czochralski process. These crytals were obtained by combining the following techniques: (1) A dislocation-free seed crystal is used to eliminate grown-in dislocations; (2) the fully encapsulated Czochralski (FEC) method is applied in combination with indium doping to suppress stress-induced dislocations; and (3) a vertical magnetic-field is applied to homogenize the distribution of doped indium.

  9. Resonant Transport in Nb/gaas/algaas/gaas Microstructures

    NASA Astrophysics Data System (ADS)

    Giazotto, F.; Pingue, P.; Beltram, F.; Lazzarino, M.; Orani, D.; Rubini, S.; Franciosi, A.

    2003-03-01

    Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs in presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in all-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

  10. Simulation of phosphorene Schottky-barrier transistors

    NASA Astrophysics Data System (ADS)

    Wan, Runlai; Cao, Xi; Guo, Jing

    2014-10-01

    Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced ambipolar I-V characteristics and significant increase of the minimal leakage current. The problem of leakage is especially severe when the gate insulator is thin and the number of layer is large, but can be effectively suppressed by reducing phosphorene to mono or bilayer. Different from two-dimensional graphene and layered dichalcogenide materials, both the ON-current of the phosphorene SBFETs and the metal-semiconductor contact resistance between metal and phosphorene strongly depend on the transport crystalline direction.

  11. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

    SciTech Connect

    Peleshchak, R. M.; Guba, S. K.; Kuzyk, O. V.; Kurilo, I. V.; Dankiv, O. O.

    2013-03-15

    The distribution of hydrostatic strains in Bi{sup 3+}-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi {yields} As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.

  12. Characterization of vertical Au/β-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

    NASA Astrophysics Data System (ADS)

    X, Z. Liu; C, Yue; C, T. Xia; W, L. Zhang

    2016-01-01

    High-resistivity β-Ga2O3 thin films were grown on Si-doped n-type conductive β-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6× 106 Ω. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 × 1018 cm-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 × 102% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga2O3 thin films and the n-type conductive β-Ga2O3 single-crystal substrate. Project supported by the National Nature Science Foundation of China (Grant No. 61223002) the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13111103700), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2012018530003).

  13. GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Knechtli, R. C.; Kamath, S.; Loo, R.

    1977-01-01

    The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

  14. Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Schnable, C. M.; Tabib-Azar, M.; Neudeck, P. G.; Bailey, S. G.; Su, H. B.; Dudley, M.; Raffaelle, R. P.

    2000-01-01

    We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every Synchrotron White-Beam X-ray Topography (SWBXT)-identified closed core screw dislocation, an Electron Beam Induced Current (EBIC) image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

  15. Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

    NASA Astrophysics Data System (ADS)

    Chen, Wenchao; Seol, Gyungseon; Rinzler, Andrew G.; Guo, Jing

    2012-03-01

    Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell.

  16. A novel double gate metal source/drain Schottky MOSFET as an inverter

    NASA Astrophysics Data System (ADS)

    Loan, Sajad A.; Kumar, Sunil; Alamoud, Abdulrahman M.

    2016-03-01

    In this work, we propose and simulate a novel structure of a double gate metal source/drain (MSD) Schottky MOSFET. The novelty of the proposed device is that it realizes a complete CMOS inverter action, which is actually being realized by the combination of two n and p type MOS transistors in the conventional CMOS technology. Therefore, the use of this device will significantly reduce the transistor count in implementing combinational and sequential circuits. Further, there is a significant reduction in the number of junctions and regions in the proposed device in comparison to the conventional CMOS inverter. Therefore, the proposed device is compact and can consume less power. The proposed device has been named as Sajad-Sunil-Schottky (SSS) device. The mixed mode circuit analysis of the proposed SSS device has shown that a CMOS inverter action with high logic level (VOH) and low logic level (VOL) as ∼VDD and ∼ground respectively. A two dimensional calibrated simulation study using the experimental data has revealed that the proposed SSS device in n and p type modes have subthreshold slopes (S) of 130 mV/decade and 85 mV/decade respectively and have reasonable high ION and ION/IOFF ratio's. Furthermore, it has been proved that such a device action cannot be realised by folding the conventional doped n and p MOS transistors.

  17. Effect of Post Deposition Annealing Treatments on Properties of AZO Thin Films for Schottky Diode Applications.

    PubMed

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    High-quality aluminum (Al) doped ZnO (AZO) thin films were deposited on silicon substrates by RF sputtering at room temperature. The deposited films were annealed from the temperatures 350 °C to 650 °C in pure nitrogen (N₂) ambient. The effects of annealing on the microstructural, optical and electrical properties of the AZO films were investigated. A detailed analysis by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Four Probe and Hall measurements was performed to study the properties of these AZO thin films. It was observed that all of the as-deposited and annealed AZO films have homogenous surfaces and hexagonal wurtzite structures with good crystalline quality. The study also suggested that there was an intermediate post annealing temperature (450 °C) at which the deposited ZnO film exhibit best surface characteristics. Pd/AZO Schottky devices were fabricated with 450 °C annealed AZO thin films and the parameters of Schottky devices were extracted from I-V characteristics. These results indicated that the Pd/AZO films were very much suitable for various optoelectronics applications particularly for metal semiconductor metal based UV detector application. PMID:27398537

  18. Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

    PubMed Central

    Lee, Young Keun; Choi, Hongkyw; Lee, Hyunsoo; Lee, Changhwan; Choi, Jin Sik; Choi, Choon-Gi; Hwang, Euyheon; Park, Jeong Young

    2016-01-01

    Carrier multiplication (i.e. generation of multiple electron–hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler’s law for photoemission on metals. The Fowler’s law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity—both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting. PMID:27271245

  19. New type of Schottky diode-based Cu-Al-Mn-Cr shape memory material films

    NASA Astrophysics Data System (ADS)

    Aksu Canbay, C.; Dere, A.; Mensah-Darkwa, Kwadwo; Al-Ghamdi, Ahmed; Karagoz Genç, Z.; Gupta, R. K.; Yakuphanoglu, F.

    2016-07-01

    Cr-doped CuAlMn shape memory alloys were produced by arc melting method. The effects of Cr content on microstructure and transformation parameters of were investigated. The alloys were characterized by X-ray analysis, optical microscope observations and differential scanning calorimetry measurements. The grain size of the alloys was decreased by the addition of Cr into CuAlMn alloy system. The martensite transformation temperature was shifted both the lower temperature and higher temperature with the addition of chromium. This change was explained on the basis of the change in the thermodynamics such as enthalpy, entropy and activation energy values. The obtained results indicate that the phase transformation temperatures of the CuAlMn alloy system can be controlled by addition of Cr. We fabricated a Schottky barrier diode and observed that ideality factor and barrier height increase with increasing temperature. The diodes exhibited a thermal sensor behavior. This indicates that Schottky diode-based Cu-Al-Mn-Cr shape memory material films can be used as a sensor in high-temperature measurement applications.

  20. Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

    NASA Astrophysics Data System (ADS)

    Lee, Young Keun; Choi, Hongkyw; Lee, Hyunsoo; Lee, Changhwan; Choi, Jin Sik; Choi, Choon-Gi; Hwang, Euyheon; Park, Jeong Young

    2016-06-01

    Carrier multiplication (i.e. generation of multiple electron–hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler’s law for photoemission on metals. The Fowler’s law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity—both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting.

  1. Spin Hall Effect in Doped Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Das Sarma, Sankar

    2006-03-01

    We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  2. Destructive Single-Event Failures in Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Casey, Megan C.; Lauenstein, Jean-Marie; Gigliuto, Robert A.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak; Chen, Dakai; LaBel, Kenneth A.

    2014-01-01

    This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

  3. Modeling of Carbon Nanotube Schottky Barrier Modulation Due to Oxidation

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2002-01-01

    A model is proposed for the experimentally observed lower Schottky barrier for holes in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. In oxidation occurring in air, the negatively charged oxygen molecules on a material usually enhance the surface dipole and provide stronger electron confinement within the bulk. Thus the CNT electron affinity will increase in air. Then the Schottky barrier for holes will have to increase according to the standard band-alignment theory, but this is against the experiment. In order to overcome this difficulty, we propose a new Schottky barrier model, assuming there is a transition region between the electrode and the CNT and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules, leading to a lower Schottky barrier for holes. This mechanism prevails for both p- and n-CNTs. The model consistently explains all the reported CNT device experiments.

  4. Development and fabrication of improved Schottky power diodes

    NASA Technical Reports Server (NTRS)

    Cordes, L. F.; Garfinkel, M.; Taft, E. A.

    1975-01-01

    Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

  5. Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

    NASA Technical Reports Server (NTRS)

    Chen, R. T.

    1983-01-01

    Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

  6. PtSi/Si LWIR Detectors Made With p+ Doping Spikes

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Park, Jin S.; George, Thomas; Fathauer, Robert W.; Jones, Eric W.; Maserjian, Joseph

    1996-01-01

    PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.

  7. Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Jin, Haoming; Hebard, Arthur

    Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

  8. Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability

    NASA Astrophysics Data System (ADS)

    Wu, Yan; Dou, Chunmeng; Wei, Feng; Kakushima, Kuniyuki; Ohmori, Kenji; Ahmet, Parhat; Watanabe, Takanobu; Tsutsui, Kazuo; Nishiyama, Akira; Sugii, Nobuyuki; Natori, Kenji; Yamada, Keisaku; Kataoka, Yoshinori; Hattori, Takeo; Iwai, Hiroshi

    2013-04-01

    The influence of structural parameters, including the Schottky barrier height for electron (φBn) and channel doping (Na), on the electrical characteristics of a scaled Schottky barrier tunneling FET (SBTFET) have been clarified by numerical device simulation. The thermionic emission current (ITH) as well as the tunneling current (ITN) have been considered as the main electron injections at the source edge. Simulation results have revealed that the main conduction is ITN in the region near and above the threshold voltage (Vth). As tunneling probability is determined by φBn and the width of the triangular potential barrier at the source edge, a lower φBn with higher Na results in a better subthreshold swing (SS) with high on-state drive current (ION) at a gate length (Lg) of 50 nm. With Lg scaling down to 10 nm, however, a lower φBn has shown an increased off-state leakage current (IOFF) due to the short-channel effect (SCE), while a larger φBn can suppress the IOFF at the cost of ION. Therefore, considering SS with ION and IOFF ratio, it can be concluded that an optimum φBn exists for short-channel devices. The SBTFET showed good subthreshold performance and higher ION/IOFF than the conventional silicon-on-insulator (SOI) MOSFET in 10 nm region with the Schottky barrier height optimization.

  9. GaAs photocathodes for low light level imaging

    NASA Astrophysics Data System (ADS)

    André, J. P.; Guittard, P.; Hallais, J.; Piaget, C.

    1981-10-01

    The use of high efficiency GaAs transmission mode photocathodes in image tubes is an achievement which has been made possible thanks to the improvement of material technology and vacuum technology. As background into the description of the material technology, the device characteristics are used for the definition of the material criteria. Possible epitaxial structures and growth methods which have been studied for the preparation of the material are reviewed with emphasis on the GaAs/(Al,Ga)As/ transparent window type of structure. Recent progress in MOVPE shows that this technique is now capable of growing high quality GaAs(Al,Ga)As double heterostructures suitable for photocathode fabrication. The assessment of p-type GaAs active layers shows electron diffusion lengths of 5 to 7 μm for a doping level of 1 × 10 19cm-3 with neglectible interface recombination. Reproduvibility of the results and further development of MOVPE for large scale growth of photocathode materials is discussed.

  10. Noise characteristics of stroboscopic transducers built with GaAs microcircuit integration

    NASA Astrophysics Data System (ADS)

    Staroselskiy, V. I.

    1985-10-01

    Stroboscopic transducers are used for measuring electric signals over a wide frequency range, the sensitivity of these devices being largely determined by the equivalent input noise voltage. The internal noise level can be appreciably lowered and the performance of such a transducer correspondingly improved by GaAs microcircuit integration of the input stage. A chip of 1x1 sq mm area can carry a mixer bridge of four Schottky-barrier diodes, a storing capacitor with discharge circuit, and a voltage repeater on Schottky-gate field-effect transistors, shot noise in the mixer diodes, and flicker noise in the diodes as well as in the voltage repeater. Two noise mechanisms are identified, corresponding to the two modes of transducer operation: mixer noise alone during strobing, mixer noise with noise in the discharge circuit and in the voltage repeater during measurement of widened pulses. The resultant spectral noise density is calculated on the basis of these identifications and corresponding equivalent circuit diagrams. During strobing the flicker noise appears as a multiplicative component and its deviation from the 1/omega law determines its lower frequency limit. During measurement of a widened pulse the noise is limited to the pass band of the output amplifier-integrator stage and a low-pass filter before this stage becomes desirable.

  11. Large anisotropic magnetoresistance across the Schottky interface in all oxide ferromagnet/semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Li, P.; Guo, B. L.; Bai, H. L.

    2011-06-01

    Over 80% fourfold symmetric anisotropic magnetoresistance (AMR) across the interface is observed in epitaxial Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures, while the twofold symmetric AMR across the interface in epitaxial Fe3O4 (111)/ZnO (0001) heterostructures is rather small. The large AMR across the interface is considered to be induced by the assistance of magnetocrystalline anisotropic energy for the transport electrons while the applied voltage bias is near the height of Schottky barrier, which is further verified by the fact that a larger critical current is needed for the maximum AMR in the Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures with heavier Nb-doping.

  12. Planar InP-based Schottky barrier diodes for terahertz applications

    NASA Astrophysics Data System (ADS)

    Jingtao, Zhou; Chengyue, Yang; Ji, Ge; Zhi, Jin

    2013-06-01

    Based on characteristics such as low barrier and high electron mobility of lattice matched In0.53Ga0.47As layer, InP-based Schottky barrier diodes (SBDs) exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones. Planar InP-based SBDs have been developed in this paper. Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved. The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32 Ω and 9.1 fF, respectively. They are highly consistent with the calculated values. The performances of the InP-based SBDs in this work, such as low noise and low loss, are promising for applications in the terahertz mixer, multiplier and detector circuits.

  13. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions.

    PubMed

    Fontana, Marcio; Deppe, Tristan; Boyd, Anthony K; Rinzan, Mohamed; Liu, Amy Y; Paranjape, Makarand; Barbara, Paola

    2013-01-01

    Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.

  14. Calculation of the bidimensional electric potential in a polycrystalline semiconductor Schottky junction

    NASA Astrophysics Data System (ADS)

    Mudrik, M.; Croitoru, N.

    1986-09-01

    In a Schottky p-type polycrystalline junction, two kinds of space-charge layers exist, one due to junction and the other due to the grain boundaries (GB). In such a case, the potential V( x, y) is a solution of a two-dimensional Poisson equation, where x is the distance from the junction and y from the GB. A case is considered where the crystallites are columnar, all the grains are identical, and the doping concentration is N Acm-3. We assume that the GB introduces energy states (i.e. traps) which are equivalent with another effective doping NBcm-3. The existence of a junction perpendicular to the GB causes the width of the GB space charge to decrease. The interaction between the two space charges is expressed by a parameter γ = ( WB0 - WB(0)/ WJ, where W B0 and WB(0) are the widths of the GB space charge without, and with, a Schottky junction, respectively, and W J is the width of the space charge of the junction. The Poisson equation is solved and the potential is V(x,y)= {qN A}/{2ɛ}x 2+ {N B}/{N A}y 2-γ {N B}/{N A}xy- 2W j-γ {N B}/{N A}W 0Bx- {N B}/{N A}[W B(0)+W 0B]y . The term- γqNB xy/2 ɛ appears due to the interaction of both space charges. The electric field, the GB energy barrier and the capacitance are calculated from the potential and are x and y dependent. An equivalent circuit for the distribution of space charges is obtained and could be used in the interpretation of experimental results.

  15. High resolution three-dimensional doping profiler

    DOEpatents

    Thundat, Thomas G.; Warmack, Robert J.

    1999-01-01

    A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.

  16. Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model

    NASA Astrophysics Data System (ADS)

    Omar, Sabih U.; Sudarshan, Tangali S.; Rana, Tawhid A.; Song, Haizheng; Chandrashekhar, M. V. S.

    2014-07-01

    We report highly ideal (n < 1.1), uniform nickel silicide (Ni-Si)/SiC Schottky barrier (1.60-1.67 eV with a standard deviation <2.8%) diodes, fabricated on 4H-SiC epitaxial layers grown by chemical vapour deposition. The barrier height was constant over a wide epilayer doping range of 1014-1016 cm-3, apart from a slight decrease consistent with image force lowering. This remarkable uniformity was achieved by careful optimization of the annealing of the Schottky interface to minimize non-idealities that could lead to inhomogeneity. Tung's barrier inhomogeneity model was used to quantify the level of inhomogeneity in the optimized annealed diodes. The estimated ‘bulk’ barrier height (1.75 eV) was consistent with the Shockley-Mott limit for the Ni-Si/4H-SiC interface, implying an unpinned Fermi level. But the model was not useful to explain the poor ideality in unoptimized, as-deposited Schottky contacts (n = 1.6 - 2.5). We show analytically and numerically that only idealities n < 1.21 can be explained using Tung's model, irrespective of material system, indicating that the barrier height inhomogeneity is not the only cause of poor ideality in Schottky diodes. For explaining this highly non-ideal behaviour, other factors (e.g. interface traps, morphological defects, extrinsic impurities, etc) need to be considered.

  17. Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

    SciTech Connect

    Hendra, P. I. B. Rahayu, F. Darma, Y.

    2014-03-24

    Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

  18. Half-metallicity at the Heusler alloy Co(2)Cr(0.5)Fe(0.5)Al(001) surface and its interface with GaAs(001).

    PubMed

    Zarei, Sareh; Javad Hashemifar, S; Akbarzadeh, Hadi; Hafari, Zohre

    2009-02-01

    Electronic and magnetic properties of the Heusler alloy Co(2)Cr(0.5)Fe(0.5)Al(001) surfaces and its interfaces with GaAs(001) are studied within the framework of density functional theory by using the plane-wave pseudopotential approach. The phase diagram obtained by ab initio atomistic thermodynamics shows that the CrAl surface is the most stable (001) termination of this Heusler alloy. We discuss that, at the ideal surfaces and interfaces with GaAs, half-metallicity of the alloy is lost, although the CrAl surface keeps high spin polarization. The energy band profile of the stable interface is investigated and a negative p Schottky barrier of -0.78 eV is obtained for this system.

  19. Formation of oxides and their role in the growth of Ag nanoplates on GaAs substrates.

    SciTech Connect

    Sun, Y.; Gosztola, D.; Lei, C.; Haasch, R.; Center for Nanoscale Materials; Univ. of Illinois

    2008-10-21

    Simple galvanic reactions between highly doped n-type GaAs wafers and a pure aqueous solution of AgNO3 at room temperature provide an easy and efficient protocol to directly deposit uniform Ag nanoplates with tunable dimensions on the GaAs substrates. The anisotropic growth of the Ag nanoplates in the absence of surfactant molecules might be partially ascribed to the codeposition of oxides of gallium and arsenic, which are revealed by extensive data from electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, during the growth of the Ag nanoplates. The electron microscopic characterization shows that each Ag nanoplate has a 'necked' geometry, that is, it pins on the GaAs lattices through only a tiny neck (with sizes of <10 nm). In addition, the as-grown Ag nanoplates exhibit strong enhancement toward Raman scattering of materials on (or around) their surfaces.

  20. Characterization of GaAs solar cells made by ion implantation and rapid thermal annealing using selective photoetching

    SciTech Connect

    van Sark, W.G.J.H.M.; Weyher, J.L.; Giling, L.J. ); de Potter, M.; van Rossum, M. )

    1990-05-01

    Shallow {ital n}-{ital p} GaAs solar cells have been made by implantation of Si into Zn-doped ({ital p}-type) GaAs substrates followed by rapid thermal annealing. The structure of the GaAs crystal has been determined by the DSL photoetching method (Diluted Sirtl-like etchants used with Light). It was found that implantation-induced-damage (revealed by DSL as microroughness and craters) was not removed after annealing for energies exceeding 60 keV. This leads to substrates that contain many precipitates, which appears to be disastrous for the fabrication of good solar cells. In addition, good cell performance is hampered by compensation effects in the {ital n}-{ital p} transition region and in the {ital n}-type layer itself.

  1. Optoelectronic gain control of a microwave single stage GaAs MESFET amplifier

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.

    1988-01-01

    Gain control of a single stage GaAs MESFET amplifier is demonstrated by the use of optical illumination of photon energy greater than the GaAs bandgap. The optical illumination is supplied by a semiconductor laser diode and is coupled to the Schottky gate of the MESFET by an optical fiber. The increase in gain is observed to be as much as 5.15 dB when the MESFET is biased close to pinchoff, that is, V(sub gs) equals -1.5 V and with optical illumination of 1.5 mW. The computed maximum available gain (MAG) and current gain (bar h sub 21 bar) from the de-embedded s-parameters show that MAG is unaffected by optical illumination, however, bar h(sub 21)bar increases by more than 2 dB under optical illumination of 1.5 mW. The maximum frequency of oscillation (F sub max) and the unity current gain cut-off frequency (F sub t) obtained by extrapolating the MAG and bar h(sub 21)bar curves, respectively, show that the F(sub max) is insensitive to optical illumination but F(sub t) increases by 5 GHz.

  2. Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

    SciTech Connect

    Valco, G.J.; Kapoor, V.J.

    1985-06-01

    The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min. 9 references.

  3. Schottky Heterodyne Receivers With Full Waveguide Bandwidth

    NASA Technical Reports Server (NTRS)

    Hesler, Jeffrey; Crowe, Thomas

    2011-01-01

    Compact THz receivers with broad bandwidth and low noise have been developed for the frequency range from 100 GHz to 1 THz. These receivers meet the requirements for high-resolution spectroscopic studies of planetary atmospheres (including the Earth s) from spacecraft, as well as airborne and balloon platforms. The ongoing research is significant not only for the development of Schottky mixers, but also for the creation of a receiver system, including the LO chain. The new receivers meet the goals of high sensitivity, compact size, low total power requirement, and operation across complete waveguide bands. The exceptional performance makes these receivers ideal for the broader range of scientific and commercial applications. These include the extension of sophisticated test and measurement equipment to 1 THz and the development of low-cost imaging systems for security applications and industrial process monitoring. As a particular example, a WR-1.9SHM (400-600 GHz) has been developed (see Figure 1), with state-of-the-art noise temperature ranging from 1,000-1,800 K (DSB) over the full waveguide band. Also, a Vector Network Analyzer extender has been developed (see Figure 2) for the WR1.5 waveguide band (500 750 GHz) with 100-dB dynamic range.

  4. Dye-sensitized Schottky barrier solar cells

    DOEpatents

    Skotheim, Terje A.

    1978-01-01

    A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

  5. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  6. Carbon doping of III-V compound semiconductors

    SciTech Connect

    Moll, A.J.

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 10{sup 14}/cm{sup 2}. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  7. Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays.

    PubMed

    Han, Ning; Yang, Zai-Xing; Wang, Fengyun; Yip, SenPo; Li, Dapan; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2016-06-28

    In recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure ⟨110⟩ and ⟨111⟩ orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely ⟨111⟩-oriented NW arrayed cells is far higher than that of ⟨110⟩-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials. PMID:27223050

  8. Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays.

    PubMed

    Han, Ning; Yang, Zai-Xing; Wang, Fengyun; Yip, SenPo; Li, Dapan; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2016-06-28

    In recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure ⟨110⟩ and ⟨111⟩ orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely ⟨111⟩-oriented NW arrayed cells is far higher than that of ⟨110⟩-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials.

  9. Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Park, J. S.; George, T.; Jones, E. W.; Fathauer, R. W.; Maserjian, J.

    1993-01-01

    By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.

  10. Scalability of Schottky barrier metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Jang, Moongyu

    2016-05-01

    In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are estimated as 1.5 × 1013 traps/cm2, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N2 annealing. Based on the diode characteristics, various sizes of erbium-silicided/platinum-silicided n/p-type SB-MOSFETs are manufactured and analyzed. The manufactured SB-MOSFETs show enhanced drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are comparable with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

  11. High-efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1979-01-01

    GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

  12. Studies of Nonradiative Recombination Centers in GaAs and InP*

    NASA Astrophysics Data System (ADS)

    Tuzemen, S.; Liang, Difei; Ucer, K. B.; Williams, R. T.

    2001-03-01

    The "reverse contrast" recombination center in semi-insulating GaAs, so named because of its anti-correlation with EL2 defects in spatial mapping, has been attributed to As-vacancy centers.^1 Several details of the nature of its optical transitions and of its spatial distribution are among questions open to experimental investigation. We report experiments on spectroscopy and spatial mapping of defects in semi-insulating GaAs and Fe-doped InP. *ST acknowledges the CIES for support as a Fulbright Scholar at WFU. The research at WFU is supported by NSF grant DMR-9732023. Confocal microscopy in cooperation with K. Grant and the MicroMed Facility of WFU. 1. C. Le Berre, C. Corbel, R. Mih, M. R. Brozel, S. Tüzemen, S. Kuisma, K. Saarinen, P. Hautojarvi, and R. Fornari, Appl. Phys. Lett. 66, 2354 (1995).

  13. Richardson-Schottky transport mechanism in ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Ali, Hassan; Khan, Usman; Rafiq, M. A.; Falak, Attia; Narain, Adeela; Jing, Tang; Xu, Xiulai

    2016-05-01

    We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.

  14. Fabrication of Au/p-Si Schottky barrier for EBIC study.

    PubMed

    Zhang, X; Joy, D

    1994-09-01

    A simple method for the fabrication of a Au/p-Si Schottky barrier suitable for electron beam induced current (EBIC) study has been developed. The mechanical and electrical properties of the fabricated Au/p-Si Schottky barriers have been tested, and EBIC measurements of the dislocation contrast have been conducted using the fabricated Schottky barriers.

  15. The polarization mechanism in CdTe Schottky detectors

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2009-03-09

    Schottky CdTe nuclear detectors are affected by bias-induced polarization phenomena when operating at room temperature. A space charge buildup occurs at the blocking contact causing the degradation in detection performance. By means of Pockels effect, we study the electric field distribution inside the detector and its variation with time and temperature. The analysis of the space charge has allowed us to point out the role of the Schottky contact and of carrier detrapping from deep levels in the polarization mechanism. Moreover, measured current transients have been quantitatively accounted for by the increase in the electric field at the blocking junction.

  16. Electromechanical resistive switching via back-to-back Schottky junctions

    SciTech Connect

    Li, Lijie

    2015-09-15

    The physics of the electromechanical resistive switching is uncovered using the theory of back-to-back Schottky junctions combined with the quantum domain space charge transport. A theoretical model of the basic element of resistive switching devices realized by the metal-ZnO nanowires-metal structure has been created and analyzed. Simulation results show that the reverse biased Schottky junction and the air gap impedance dominate the current-voltage relation at higher external voltages; thereby electromechanically varying the air gap thickness causes the device exhibit resistive tuning characteristics. As the device dimension is in nanometre scale, investigation of the model based on quantum mechanics has also been conducted.

  17. SiC-Based Schottky Diode Gas Sensors

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  18. High voltage, high current Schottky barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J. (Inventor)

    1977-01-01

    A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.

  19. Charge Transport at Ti-Doped Hematite (001)/Aqueous Interfaces

    SciTech Connect

    Chatman, Shawn ME; Pearce, Carolyn I.; Rosso, Kevin M.

    2015-03-10

    Solid-state transport and electrochemical properties of Ti-doped hematite (001) epitaxial thin films (6.0, 8.3, and 16.6 at% Ti) were probed to achieve a better understanding of doped hematite for photoelectrochemical (PEC) applications. Room temperature resistivity measurements predict a resistivity minimum near 10 at% Ti doping, which can be rationalized as maximizing charge compensating Fe2+ concentration and Fe3+ electron accepting percolation pathways simultaneously. Temperature dependent resistivity data are consistent with small polaron hopping, revealing an activation energy that is Ti concentration dependent and commensurate with previously reported values (≈ 0.11 eV). In contact with inert electrolyte, linear Mott-Schottky data at various pH values indicate that there is predominantly a single donor for Ti-doped hematite at 6.0 at% Ti and 16.6 at% Ti concentrations. Two slope Mott-Schottky data at pH extremes indicate the presence of a second donor or surface state in the 8.3 at% Ti-doped film, with an energy level ≈ 0.7 eV below the Fermi level. Mott-Schottky plots indicate pH and Ti concentration dependent flatband potentials of -0.4 to -1.1 V vs. Ag/AgCl, commensurate with previously reported data. Flatband potentials exhibited super-Nernstian pH dependence ranging from -69.1 to -101.0 mV/pH. Carrier concentration data indicate that the Fermi energy of the Ti-doped system is Ti concentration dependent, with a minimum of 0.15 eV near 10 at% Ti. These energy level data allow us to construct an energy band diagram for Ti-doped hematite electrode/electrolyte interfaces, and to determine a Ti-doping concentration t

  20. Spin Hall effect in doped semiconductor structures.

    PubMed

    Tse, Wang-Kong; Das Sarma, S

    2006-02-10

    In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as sigma(xy)SJ/sigma(xy)SS approximately (h/tau)/epsilonF, with tau being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining sigma(s)/sigma(c) approximately 10(-3)-10(-4), where sigma(s(c)) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  1. Spin Hall Effect in Doped Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Tse, Wang-Kong; Das Sarma, S.

    2006-02-01

    In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as σxySJ/σxySS˜(ℏ/τ)/ɛF, with τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining σs/σc˜10-3-10-4, where σs(c) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)]SCIEAS0036-807510.1126/science.1105514 in n-doped 3D GaAs system.

  2. Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

    NASA Technical Reports Server (NTRS)

    Manohara, Harish M.; Wong, Eric W.; Schlecht, Erich; Hunt, Brian D.; Siegel, Peter H.

    2005-01-01

    We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.

  3. Illumination effect on electrical characteristics of organic-based Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Uslu, Habibe; Altındal, Şemsettin; Dökme, Ilbilge

    2010-11-01

    The forward and reverse bias capacitance-voltage (C -V) and conductance-voltage (G /ω-V) characteristics of Au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes have been investigated depending on illumination intensity at room temperature and 1 MHz. These experimental C -V and G /ω-V characteristics show fairly large illumination dispersion especially in the weak inversion and depletion regions and they increase with the increasing illumination intensity because of the illumination induced interface states and electron-hole pair. The C -V plots show that peaks are the results of the particular distribution density of the interface states (Nss), interfacial polymer layer, and series resistance (Rs) of device. The magnitude of the peaks increases with the increasing illumination intensity and their positions shift from the high forward bias voltage to low forward bias voltages. The C-2-V plots give a straight line in a wide bias voltage region for each illumination intensity. The variation in doping concentration (ND), depletion layer width (WD), and barrier height [ΦB(C -V)] were obtained from these C-2-V plots. In addition, voltage dependent density distribution profile of Nss was obtained from both low-high capacitance (CLF-CHF) and Hill-Coleman methods. It is observed that there is a good agreement between the results obtained by these methods. In addition, voltage dependent Rs profile was obtained from C -V and G /ω-V data by using Nicollian and Brews method.

  4. Location of the minimum of the differential tunneling resistance in a superconductor-degenerate semiconductor Schottky contact

    NASA Astrophysics Data System (ADS)

    Lissitski, M. P.; Naddeo, A.; Nappi, C.; Tagliacozzo, A.; Gubankov, V. N.; Monaco, R.; Russo, M.

    2003-04-01

    Measurements of differential resistance in a superconductor-degenerate semiconductor junction Nb - n+ +GaAs at T = 1.6 K show close similarity to those for a conventional superconductor-insulator- normal metal junction, except for the position of the minimum which is located at 3.6 meV. Using a simple model for the charge screening at the Schottky barrier, we give an argument why this minimum is by far displaced with respect to the superconducting gap energy ( Δg = 1.5 meV for bulk Nb). We argue that a rebuilding of the density of states takes place at the barrier, due to the imperfect metal screening in the degenerate semiconductor. Energy states close to the degenerate semiconductor Fermi energy are depleted at the barrier and are not available for tunneling, up to an energy Eg which adds to the superconducting gap Δg.

  5. Ultra-Thin-Film GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Wang, K. L.; Shin, B. K.; Yeh, Y. C. M.; Stirn, R. J.

    1982-01-01

    Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.

  6. Silicon Schottky photovoltaic diodes for solar energy conversion

    NASA Technical Reports Server (NTRS)

    Anderson, W. A.

    1975-01-01

    Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

  7. Junction properties of aluminum/polypyrrole (polypyrrole derivatives) Schottky diodes

    NASA Astrophysics Data System (ADS)

    Singh, Ramadhar; Narula, Amarjeet K.

    1997-11-01

    The current-voltage characteristics of Schottky junctions formed by using aluminum on polypyrrole, poly(N-methyl pyrrole) and the copolymer poly(N-methyl pyrrole-pyrrole) have been investigated. The formation of the junctions has been confirmed by capacitance-voltage characteristics and Chot plots. The results have been explained on the basis of thermionic emission theory.

  8. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  9. Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction

    NASA Astrophysics Data System (ADS)

    Chen, Hai-Yang; Jiang, Lan; Li, Da-Rang

    2011-05-01

    PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P+PN+ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

  10. Photocurrent spectra of semi-insulating GaAs M-S-M diodes: Role of the contacts

    NASA Astrophysics Data System (ADS)

    Dubecký, František; Oswald, Jiří; Kindl, Dobroslav; Hubík, Pavel; Dubecký, Matúš; Gombia, Enos; Šagátová, Andrea; Boháček, Pavol; Sekáčová, Mária; Nečas, Vladimír

    2016-04-01

    Current-voltage (I-V) characteristics and photocurrent (PC) spectra (600-1000 nm) of the metal-semiconductor-metal (M-S-M) structures based on high-quality undoped semi-insulating (SI) GaAs with AuGeNi backside contact and different semitransparent top contacts (AuGeNi, Pt, Gd and Nd) are reported, and analysed with the help of a simple physical model. It is shown that the dominant peak in the PC spectra and the change of photocurrent sign can be explained by a presence of two Schottky-like barriers at the top and bottom surfaces. In addition, I-V and PC results show dependence on the bias and its polarity, and on the contact metal used. The possible origins of these effects are discussed.

  11. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  12. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.

    PubMed

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M

    2015-07-15

    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  13. Single-hole transistor in p-type GaAs /AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Grbić, Boris; Leturcq, Renaud; Ensslin, Klaus; Reuter, Dirk; Wieck, Andreas D.

    2005-12-01

    A single-hole transistor is patterned in a p-type, C-doped GaAs /AlGaAs heterostructure by scanning probe oxidation lithography. Clear Coulomb blockade resonances have been observed at Thole=300mK. A charging energy of ˜1.5meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multilevel transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed.

  14. Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

    NASA Astrophysics Data System (ADS)

    Ageev, O. A.; Solodovnik, M. S.; Balakirev, S. V.; Mikhaylin, I. A.; Eremenko, M. M.

    2016-08-01

    The GaAs native oxide effect upon the surface morphology of the GaAs epitaxial layer was studied with taking into account the main growth parameters of MBE technology: substrate temperature, effective As4/Ga flux ratio and growth rate. The MBE modes of atomically smooth and rough surfaces and surfaces with Ga droplet array formation were determined. The possibility of the obtaining of GaAs nanowires via GaAs native oxide layer was shown.

  15. A Study of the Parasitic Properties of the Schottky Barrier Diode

    NASA Astrophysics Data System (ADS)

    Ren, Tianhao; Zhang, Yong; Liu, Shuang; Guo, Fangzhou; Jin, Zhi; Zhou, Jingtao; Yang, Chengyue

    2016-09-01

    In this paper, we present a newly designed parameter extraction method of the Schottky barrier diode (SBD) with the purpose of measuring and studying its parasitic properties. This method includes three kinds of auxiliary configurations and is named as three-configuration parameter extraction method (TPEM). TPEM has such features as simplicity of operation, self-consistence, and accuracy. With TPEM, the accurate parasitic parameters of the diode can be easily obtained. Taking a GaAs SBD as an example, the pad-to-pad capacitance is 7 fF, the air-bridge finger self-inductance 11 pH, the air-bridge finger self-resistance 0.6 Ω, and the finger-to-pad capacitance 2.1 fF. A more accurate approach to finding the value of the series resistant of the SBD is also proposed, and then a complete SBD model is built. The evaluation of the modeling technology, as well as TPEM, is implemented by comparing the simulated and measured I-V curves and the S-parameters. And good agreements are observed. By using TPEM, the influence of the variation of the geometric parameters is studied, and several ways to reduce the parasitic effect are presented. The results show that the width of the air-bridge finger and the length of the channel are the two largest influencing parameters, with the normalized impact factors 0.56 and 0.29, respectively. By using TPEM and the modeling technology presented in this paper, a design process of the SBD is proposed. As an example, a type of SBD suitable for 500-600 GHz zero-biased detection is designed, and the agreement between the simulated and measured results has been improved. SBDs for other applications could be designed in a similar way.

  16. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  17. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  18. Schottky barrier effect on the electrical properties of Fe3O4/ZnO and Fe3O4/Nb : SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Kiwon; Kim, D. H.; Dho, Joonghoe

    2011-09-01

    The current-voltage (I-V) characteristics of Fe3O4/Nb-doped SrTiO3(Nb : STO) and Fe3O4/ZnO junctions prepared by pulsed laser deposition were investigated as a function of temperature. The rectifying behaviour was more distinctive in Fe3O4/Nb : STO than in the Fe3O4/ZnO. Contrary to Fe3O4/Nb : STO, remarkably, the current flow in Fe3O4/ZnO was slightly larger for negative bias voltages than for positive bias voltages. The threshold voltage in Fe3O4/Nb : STO dramatically shifted to a higher voltage by decreasing the temperature, and hysteresis behaviour with a cyclic voltage sweep appeared below 120 K. Upon cooling, the rectifying behaviour in Fe3O4/ZnO gradually disappeared within the measurement range. The observed difference between Fe3O4/Nb : STO and Fe3O4/ZnO could be explained by the shape and height of the Schottky barrier which was determined by the relative magnitude of the work functions of the two contact materials. The formation of the Schottky barrier presumably resulted from an upward shift of the interface band in Fe3O4/Nb : STO, while a little downward shift of the interface band occurred in Fe3O4/ZnO. In addition, Al-doping into ZnO induced a complete disappearance of the Schottky barrier in the Fe3O4/Al-doped ZnO junction.

  19. Defect studies in low-temperature-grown GaAs

    SciTech Connect

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  20. Defect studies in low-temperature-grown GaAs

    SciTech Connect

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

  1. GaAs Substrates for High-Power Diode Lasers

    NASA Astrophysics Data System (ADS)

    Mueller, Georg; Berwian, Patrick; Buhrig, Eberhard; Weinert, Berndt

    GaAs substrate crystals with low dislocation density (Etch-Pit Density (EPD) < 500,^-2) and Si-doping ( ~10^18,^-3) are required for the epitaxial production of high-power diode-lasers. Large-size wafers (= 3 mathrm{in} -> >=3,) are needed for reducing the manufacturing costs. These requirements can be fulfilled by the Vertical Bridgman (VB) and Vertical Gradient Freeze (VGF) techniques. For that purpose we have developed proper VB/VGF furnaces and optimized the thermal as well as the physico-chemical process conditions. This was strongly supported by extensive numerical process simulation. The modeling of the VGF furnaces and processes was made by using a new computer code called CrysVUN++, which was recently developed in the Crystal Growth Laboratory in Erlangen.GaAs crystals with diameters of 2 and 3in were grown in pyrolytic Boron Nitride (pBN) crucibles having a small-diameter seed section and a conical part. Boric oxide was used to fully encapsulate the crystal and the melt. An initial silicon content in the GaAs melt of c (melt) = 3 x10^19,^-3 has to be used in order to achieve a carrier concentration of n = (0.8- 2) x10^18,^-3, which is the substrate specification of the device manufacturer of the diode-laser. The EPD could be reduced to values between 500,^-2 and 50,^-2 with a Si-doping level of 8 x10^17 to 1 x10^18,^-3. Even the 3in wafers have rather large dislocation-free areas. The lowest EPDs ( <100,^-2) are achieved for long seed wells of the crucible.

  2. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jin, Y. J.; Chia, C. K.; Liu, H. F.; Wong, L. M.; Chai, J. W.; Chi, D. Z.; Wang, S. J.

    2016-07-01

    In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

  3. GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saito, Junji; Nanbu, Kazuo; Ishikawa, Tomonori; Kondo, Kazuo

    1988-01-01

    GaAs surface cleaning by thermal oxidation and sublimation prior to molecular-beam-epitaxial growth has been investigated as a means of reducing the carrier depletion at the substrate and epitaxial layer interface. The carrier depletion between the substrate and epitaxial films, measured by a C-V carrier profiling technique, was shown to decrease significantly with an increase in the thickness of the thermal oxidation. The concentration of carbon contamination near the substrate-epitaxial interface was measured using secondary ion mass spectroscopy. The carbon concentration correlated very well with the carrier depletion. Therefore, the main origin of the carrier depletion is believed to be the carbon concentration of the initial growth surface. Based on these results, the thermal oxidation and sublimation of a semi-insulating GaAs substrate was successfully applied to improve the mobility and sheet concentration of the two-dimensional electron gas in selectively doped GaAs/N-Al0.3Ga0.7As heterostructures with very thin GaAs buffer layers.

  4. Method for measuring the drift mobility in doped semiconductors

    DOEpatents

    Crandall, Richard S.

    1982-01-01

    A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

  5. Method for measuring the drift mobility in doped semiconductors

    DOEpatents

    Crandall, R.S.

    1982-03-09

    A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

  6. P-doping mechanisms in catalyst-free gallium arsenide nanowires.

    PubMed

    Dufouleur, Joseph; Colombo, Carlo; Garma, Tonko; Ketterer, Bernt; Uccelli, Emanuele; Nicotra, Marco; Fontcuberta i Morral, Anna

    2010-05-12

    Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incorporation from the side facets and from the gallium droplet. In the latter incorporation path, doping compensation seems to play an important role in the effective dopant concentration. Hole concentrations of at least 2.4 x 10(18) cm(-3) have been achieved, which to our knowledge is the largest p doping range obtained up to date. This work opens the avenue for the use of doped GaAs nanowires in advanced applications and in mesoscopic physics experiments.

  7. Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

    SciTech Connect

    Chasin, Adrian Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul; Simoen, Eddy; Gielen, Georges

    2014-02-24

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

  8. Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

    PubMed

    Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

    2015-09-16

    The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

  9. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  10. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  11. GaAs optoelectronic neuron arrays.

    PubMed

    Lin, S; Grot, A; Luo, J; Psaltis, D

    1993-03-10

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10(4) cm(-2) are discussed.

  12. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  13. Method of Fabricating Schottky Barrier solar cell

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M. (Inventor)

    1982-01-01

    On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

  14. Homojunction GaAs solar cells grown by close space vapor transport

    SciTech Connect

    Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-06-08

    We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit voltages reaching 909 mV, and internal quantum efficiency of 90%. The performance of these cells is partly limited by the electron diffusion lengths in the wafer substrates, as evidenced by the improved peak internal quantum efficiency in devices fabricated on a CSVT absorber film. Unoptimized highly-doped n-type emitters also limit the photocurrent, indicating that thinner emitters with reduced doping, and ultimately wider band gap window or surface passivation layers, are required to increase the efficiency.

  15. N + doping of gallium arsenide by rapid thermal oxidation of a silicon cap

    NASA Astrophysics Data System (ADS)

    Sadana, D. K.; de Souza, J. P.; Cardone, F.

    1990-10-01

    Shallow (<200 nm) Si profiles with doping levels in excess of 2×1018 cm-3 were reproducively obtained in GaAs by rapid thermal oxidation (RTO) of Si caps (50 or 160 nm) in 0.1% O2/Ar ambient at 850-1050 °C. The doping level as well as distribution of the diffused Si can be controlled by the thickness of the Si cap, RTO temperature, RTO time, and oxygen level in the annealing ambient. It appears that the generation of Si interstitials at the oxidizing surface of the Si cap during RTO is responsible for the Si diffusion into the underlying GaAs substrate.

  16. Planar doped barrier subharmonic mixers

    NASA Technical Reports Server (NTRS)

    Lee, T. H.; East, J. R.; Haddad, G. I.

    1992-01-01

    The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.

  17. Polymer/metal hybrid multilayers modified Schottky devices

    SciTech Connect

    Torrisi, V.; Isgrò, G.; Li Destri, G.; Marletta, G.; Ruffino, F.; Grimaldi, M. G.; Crupi, I.

    2013-11-04

    Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1–5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers number and its evolution was quantified and analyzed.

  18. Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts

    NASA Astrophysics Data System (ADS)

    Alberti, Alessandra; Roccaforte, Fabrizio; Libertino, Sebania; Bongiorno, Corrado; La Magna, Antonino

    2011-11-01

    Ni-silicide/silicon Schottky contacts have been realised by promoting low-temperature Ni-Si interdiffusion during deposition (˜50 °C) and reaction (450 °C) on an oxygen-free [001] silicon surface. A 14 nm transrotational NiSi layer was produced made of extremely flat pseudo-epitaxial domains (˜200 nm in diameter). The current-voltage (I-V) characteristics (340-80 K) have indicated the presence of structural inhomogeneities which lower the Schottky barrier by Δ≈0.1 eV. They have been associated with the core regions of the trans-domains (wherein the silicide lattice is epitaxially aligned to that of Si) since their density (˜2.5×109 cm-2) and dimension (˜10 nm) fit the I-V curves vs temperature following the Tung's approach.

  19. A novel physical parameter extraction approach for Schottky diodes

    NASA Astrophysics Data System (ADS)

    Wang, Hao; Chen, Xing; Xu, Guang-Hui; Huang, Ka-Ma

    2015-07-01

    Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode’s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach. Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant No. U1230112).

  20. Schottky barriers and interface structure at silicide-silicon interfaces

    NASA Astrophysics Data System (ADS)

    Matthai, C. C.; Rees, N. V.; Shen, T. H.

    Schottky barriers at metal-semiconductor interfaces have attracted much interest in recent years. One of the principal interests has centred on the mechanism for Fermi level pinning. The sililcide-silicon interface has been proposed as a system which is described by the metal induced gap states model. We have performed calculations on the NiSi 2/Si(111) type A and type B interfaces as well as the NiSi 2/Si(100) interface. In addition we have also studied the CoSi 2/Si interface. For the NiSi 2/Si(111) interface, we have further investigated the influence of point defects and hydrostatic pressure on the Schottky barrier height. Based on the results of our calculations we conclude that these interfaces do indeed subscribe to the MIGS model. We also present the results of some total energy calculations and discuss these with experimental observations.

  1. ITON Schottky contacts for GaN based UV photodetectors

    NASA Astrophysics Data System (ADS)

    Vanhove, N.; John, J.; Lorenz, A.; Cheng, K.; Borghs, G.; Haverkort, J. E. M.

    2006-12-01

    Lateral Schottky ultraviolet detectors were fabricated in GaN using indium-tin-oxynitride (ITON) as a contact metal. The GaN semiconductor material was grown on 2 in. sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The Schottky contact has been realized using ITON that has been deposited using sputter techniques. I- V characteristics have been measured with and without UV illumination. The device shows photo-to-dark current ratios of 10 3 at -1 V bias. The spectral responsivity of the UV detectors has been determined. The high spectral responsivity of more than 30 A/W at 240 nm is explained by a high internal gain caused by generation-recombination centers at the ITON/GaN interface. Persistent photocurrent effect has been observed in UV light (on-off) switching operation, time constant and electron capture coefficient of the transition has been determined.

  2. Diamond Schottky diodes with ideality factors close to 1

    SciTech Connect

    Fiori, A. Teraji, T. Koide, Y.

    2014-09-29

    The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier diodes (SBDs) has been investigated. The Schottky barrier height (ϕ{sub B}) and ideality factor (n), at high temperature, were consistently estimated by employing a vertical SBD structure. An exponential drop of ϕ{sub B} in time at 600 K and its stabilization at 1.46 eV after 90 min were reported. The lowest n among SBDs examined was close to 1.0 at 600 K. A linear relation between ϕ{sub B} and n in a statistical electrical characterization suggests a ϕ{sub B} inhomogeneity.

  3. The Current-Voltage Characteristics of the Au/MBEn-GaAs Schottky Diodes in a Wide Temperature Range

    NASA Astrophysics Data System (ADS)

    EfeoǦLU, Hasan; Turut, Abdulmecit

    2013-07-01

    The Au/MBEn-GaAs Schottky diodes have been fabricated by us. The slope of the conventional ln(I0/T2) versus (kT)-1 plotted in the temperature range of 120-350 K has given a Richardson constant (RC) of 7.69 A (cmK)-2 which is in close agreement with the value of 8.16 A/cm2K2 known for n-type GaAs. The barrier height (BH) value in 40-160 K range has decreased obeying to Gaussian distribution (GD) model of the BH based on thermionic emission current theory. The modified RC plot according to the GD model has given a RC value of 2.45 A (cmK)-2 or a value of 2.38 A (cmK)-2 by taking into account the temperature dependence of the standard deviation. Therefore, we have modified the Richardson's plot using the temperature dependent values of the effective area of the patches introduced by lateral inhomogeneity of the BHs and we have obtained a RC value of 8.10 A (cmK)-2.

  4. Study of basic mechanisms of single event upset in low-capacitance Si and GaAs diodes using high-energy microbeams

    NASA Astrophysics Data System (ADS)

    Nishijima, T.; Sekiguchi, H.; Matsuda, S.; Takeuchi, M.; Shiono, N.; Anayama, H.; Mirio, A.

    1995-09-01

    Current transients induced in Si and GaAs diodes by 2 MeV helium ions were studied by a high-speed digitizing technique (time resolution = 55 ps) using a NbPb superconducting delay-line. We designed and prepared three different types of silicon {P}/{N} junction diodes and GaAs Schottky diodes for the present work. An optimum beam position on the diodes was set using a high-resolution ion beam induced charge (IBIC) imaging system. The space resolving power of the measurement system was confirmed with a small SSD (50 μm ⊘) made on an epi substrate with 20 μm thickness. Current transients were observed for all diodes tested in this work. In the case of {P}/{N} junction diode on a thin (1.5 μm) epi substrate, the collected charge was constant for the bias voltage in a range from - 3 to - 15 V. A funneling factor for a bulk GaAs diode was 1.5.

  5. Electron-beam studies of Schottky-barrier detector surfaces

    NASA Technical Reports Server (NTRS)

    Peckerar, M. C.

    1973-01-01

    Review of the surface anomalies occurring in Schottky-barrier particle detectors identifiable by means of an electron beam technique employed by Czaja (1965) for analyzing defects in diode structures. The technique is shown to make possible the detection and identification of the following anomalies: (1) chemical contamination of the detector surface; (2) mechanical damage of the wafer substrates; (3) damage introduced in semiconductor surface preparation; (4) radiation damage; and (5) defective surface metallization.

  6. Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Tang, Cen; Xie, Gang; Zhang, Li; Guo, Qing; Wang, Tao; Sheng, Kuang

    2013-10-01

    A novel structure of AlGaN/GaN Schottky barrier diode (SBD) featuring electric field optimization techniques of anode-connected-field-plate (AFP) and magnesium-doped p-type buried layer under the two-dimensional electron gas (2DEG) channel is proposed. In comparison with conventional AlGaN/GaN SBDs, the magnesium-doped p-type buried layer in the proposed structure can provide holes that can help to deplete the surface 2DEG. As a result, surface field strength around the electrode edges is significantly suppressed and the electric field along the channel is distributed more evenly. Through 2D numerical analysis, the AFP parameters (field plate length, LAFP, and field plate height, TAFP) and p-type buried layer parameters (p-type layer concentration, NP, and p-type layer thickness, TP) are optimized to achieve a three-equal-peak surface channel field distribution under exact charge balance conditions. A novel structure with a total drift region length of 10.5 μm and a magnesium-doped p-type concentration of 1 × 1017 cm-3 achieves a high breakdown voltage (VB) of 1.8 kV, showing 5 times improvement compared with the conventional SBD with the same device dimension.

  7. High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

    NASA Astrophysics Data System (ADS)

    Kang, He; Wang, Quan; Xiao, Hong-Ling; Wang, Cui-Mei; Jiang, Li-Juan; Feng, Chun; Chen, Hong; Yin, Hai-Bo; Wang, Xiao-Liang; Wang, Zhan-Guo; Hou, Xun

    2014-06-01

    Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V2BR/RON,sp value of 194 MW.cm-2.

  8. Variation of spectral response curves of GaAs photocathodes in activation chamber

    NASA Astrophysics Data System (ADS)

    Zou, Jijun; Chang, Benkang; Yang, Zhi; Wang, Hui; Gao, Pin

    2006-09-01

    The spectral response curves of reflection-mode GaAs (100) photocathodes are measured in activation chamber by multi-information measurement system at RT, and by applying quantum efficiency formula, the variation of spectral response curves have been studied. Reflection-mode GaAs photocathodes materials are grown over GaAs wafer (100) by MBE with p-type beryllium doping, doping concentration is 1×10 19 cm -3 and the active layer thickness is 1.6μm. During the high-temperature activation process, the spectral response curves varied with activation time are measured. After the low-temperature activation, the photocathode is illuminated by a white light source, and the spectral response curves varied with illumination time are measured every other hour. Experimental results of both high-temperature and low-temperature activations show that the spectral response curve shape of photocathodes is a function of time. We use traditional quantum efficiency formulas of photocathodes, in which only the Γ photoemission is considered, to fit experimental spectral response curves, and find the theoretical curves are not in agreement with the experimental curves, the reason is other valley and hot-electron yields are necessary to be included in yields of reflection-mode photocathodes. Based on the two-minima diffusion model and the fit of escape probability, we modified the quantum efficiency formula of reflection-mode photocathodes, the modified formula can be used to explain the variation of yield curves of reflection-mode photocathodes very well.

  9. Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.

    2000-03-02

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity.

  10. Sn-Seeded GaAs Nanowires as Self-Assembled Radial p–n Junctions

    PubMed Central

    2015-01-01

    The widespread use of Au as a seed particle in the fabrication of semiconductor nanowires presents a fundamental limitation to the potential incorporation of such nanostructures into electronic devices. Although several other growth techniques have been demonstrated, the use of alternative seed particle metals remains an underexplored but potentially very promising way to influence the properties of the resulting nanowires while simultaneously avoiding gold. In this Letter, we demonstrate the use of Sn as a seed particle metal for GaAs nanowires grown by metal–organic vapor phase epitaxy. We show that vertically aligned and stacking defect-free GaAs nanowires can be grown with very high yield. The resulting nanowires exhibit Esaki diode behavior, attributed to very high n-doping of the nanowire core with Sn, and simultaneous C-doping of the radial overgrowth. These results demonstrate that the use of alternative seed particle metals is a potentially important area to explore for developing nanowire materials with controlled material properties. PMID:25989532

  11. Silver nanowires-templated metal oxide for broadband Schottky photodetector

    NASA Astrophysics Data System (ADS)

    Patel, Malkeshkumar; Kim, Hong-Sik; Park, Hyeong-Ho; Kim, Joondong

    2016-04-01

    Silver nanowires (AgNWs)-templated transparent metal oxide layer was applied for Si Schottky junction device, which remarked the record fastest photoresponse of 3.4 μs. Self-operating AgNWs-templated Schottky photodetector showed broad wavelength photodetection with high responsivity (42.4 A W-1) and detectivity (2.75 × 1015 Jones). AgNWs-templated indium-tin-oxide (ITO) showed band-to-band excitation due to the internal photoemission, resulting in significant carrier collection performances. Functional metal oxide layer was formed by AgNWs-templated from ITO structure. The grown ITO above AgNWs has a cylindrical shape and acts as a thermal protector of AgNWs for high temperature environment without any deformation. We developed thermal stable AgNWs-templated transparent oxide devices and demonstrated the working mechanism of AgNWs-templated Schottky devices. We may propose the high potential of hybrid transparent layer design for various photoelectric applications, including solar cells.

  12. Barrier heights of GaN Schottky contacts

    NASA Astrophysics Data System (ADS)

    Kampen, Thorsten U.; Mönch, Winfried

    1997-06-01

    Silver and lead contacts prepared by evaporation onto clean n-GaN(0001) surfaces are rectifying. Their zero-bias barrier heights and ideality factors were determined from the current-voltage characteristics. The observed linear correlation between the barrier heights and the ideality factors is attributed to nonuniform distributions of barrier heights along the interfaces. The barrier heights of ideal Schottky contacts depend on the applied voltage due to the image-force lowering only and their ideally factors nif are approximately 1.01. By extrapolation of our experimental data to n = 1.01, we obtain barrier heights of 0.82 eV and 0.73 eV for uniform Ag- and Pb/n-GaN(0001) contacts, respectively. By applying the idea of metal-induced gap states (MIGS), the barrier heights of ideal Schottky contacts have been predicted to vary linearly as a function of the difference of the metal and the semiconductor electronegativities. The zero-charge-transfer barrier height and slope parameter are characteristic of the respective semiconductor. The zero-charge-transfer barrier heights have been calculated using an empirical tight-binding approach and the slope parameters are given by the optical dielectric constants. The experimental barrier heights of GaN Schottky contacts confirm the predictions of the MIGS-and-electronegativity model.

  13. Process for preparing schottky diode contacts with predetermined barrier heights

    DOEpatents

    Chang, Y. Austin; Jan, Chia-Hong; Chen, Chia-Ping

    1996-01-01

    A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.

  14. Acoustic Wave Chemical Microsensors in GaAs

    SciTech Connect

    Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason; John L. Reno; Richard Kottenstette; Stephen A. Casalnuovo; Susan L. Hietala; Vincent M. Hietala

    1998-09-20

    High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.

  15. Electronic transport and Schottky barrier heights of p-type CuAlO2 Schottky diodes

    NASA Astrophysics Data System (ADS)

    Lin, Yow-Jon; Luo, Jie; Hung, Hao-Che

    2013-05-01

    A CuAlO2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (qϕB) determined from J-V measurements is lower than that determined from C-V measurements and qϕB determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor.

  16. A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications

    NASA Technical Reports Server (NTRS)

    Peatman, W. C. B.; Crowe, Thomas W.; Shur, M.; Gelmont, B.

    1992-01-01

    A new Schottky diode is investigated for use as a multiplier element in the millimeter and submillimeter wavelength regions. The new diode is based on the Schottky contact at the edge of a 2-dimensional electron gas (2-DEG). As a negative voltage is applied to the Schottky contact, the depletion layer between the Schottky contact and the 2-DEG expands and the junction capacitance decreases, resulting in a nonlinear capacitance-voltage characteristic. In this paper, we outline the theory, design, fabrication, and evaluation of the new device. Recent results include devices having cutoff frequencies of 1 THz and above. Preliminary multiplier results are also presented.

  17. Tunneling Characteristics Depending on Schottky Barriers and Diffusion Current in SiOC.

    PubMed

    Oh, Teresa; Kim, Chy Hyung

    2016-02-01

    To obtain a diffusion current in SiOC, the aluminum doped zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering. All the X-ray patterns of the SiOC films showed amorphous phases. The level of binding energy of Si atoms will lead to an additional potential modulation by long range Coulombic and covalent interactions with oxygen ions. The growth of the AZO film was affected by the characteristics of SiOC, resulting in similar trends in XPS spectra and a shift to higher AZO lattice d values than the original AZO d values in XRD analyses. The charges trapped by the defects at the interlayer between AZO and SiOC films induced the decreased mobility of carriers. In the absence of trap charges, AZO grown on SiOC film such as the sample prepared at O2 = 25 or 30 sccm, which has low charge carrier concentration and high mobility, showed high mobility in an ambipolar characteristic of oxide semiconductor due to the tunneling effect and diffusion current. The structural matching of an interface between AZO and amorphous SiOC enhanced the height of Schottky Barrier (SB), and then the mobility was increased by the tunneling effect from band to band through the high SB. PMID:27433737

  18. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    SciTech Connect

    Yuryev, V. A. Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

  19. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    NASA Astrophysics Data System (ADS)

    Yuryev, V. A.; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-01

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about -2%/ °C in the temperature interval from 25 to 50 °C.

  20. GaInP /GaAs double heterojunction bipolar transistor with GaAs /Al0.11Ga0.89As/GaInP composite collector

    NASA Astrophysics Data System (ADS)

    Poh, Z. S.; Yow, H. K.; Houston, P. A.; Krysa, A. B.; Ong, D. S.

    2006-07-01

    GaInP /GaAs/GaInP double heterojunction bipolar transistor (DHBT) with an Al0.11Ga0.89As layer within lowly doped GaAs-GaInP composite collector was characterized. In comparison to an abrupt GaInP /GaAs/GaInP DHBT with saturation voltages in excess of 20V, current gains of 25 at high biases, and breakdown voltages in the range of 22V, the DHBT incorporating GaAs -Al0.11Ga0.89As-GaInP composite collector has demonstrated lower saturation voltages of less than 6V and high current gains of 50 without compromising the breakdown voltages of the GaInP collector. Al0.11Ga0.89As layer can thus provide an alternative design to effectively minimize the potential spike effects at the GaAs /GaInP heterojunction.

  1. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  2. Characteristics of cylindrical surrounding-gate GaAs x Sb1-x /In y Ga1-y As heterojunction tunneling field-effect transistors

    NASA Astrophysics Data System (ADS)

    Guan, Yun-He; Li, Zun-Chao; Luo, Dong-Xu; Meng, Qing-Zhi; Zhang, Ye-Fei

    2016-10-01

    A III-V heterojunction tunneling field-effect transistor (TFET) can enhance the on-state current effectively, and GaAs x Sb1-x /In y Ga1-y As heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition. In this paper, the performance of the cylindrical surrounding-gate GaAs x Sb1-x /In y Ga1-y As heterojunction TFET with gate-drain underlap is investigated by numerical simulation. We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing (SS), while increasing source doping concentration and adjusting the composition of GaAs x Sb1-x /In y Ga1-y As can improve the on-state current. In addition, the resonant TFET based on GaAs x Sb1-x /In y Ga1-y As is also studied, and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current, respectively, and is much superior to the conventional TFET. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176038 and 61474093), the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010103002), and the Technology Development Program of Shaanxi Province, China (Grant No. 2016GY-075).

  3. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect

    Dutta, P. Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  4. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  5. Simulation study of a new InGaN p-layer free Schottky based solar cell

    NASA Astrophysics Data System (ADS)

    Adaine, Abdoulwahab; Ould Saad Hamady, Sidi; Fressengeas, Nicolas

    2016-08-01

    On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition. The choice of the main structure of the InGaN solar cell is however crucial. Obtaining a high efficiency requires to improve the light absorption and the photogenerated carriers collection that depend on the layers parameters, including the Indium composition, p- and n-doping, device geometry … Unfortunately, one of the main drawbacks of InGaN is linked to its p-type doping, which is very difficult to realize since it involves complex technological processes that are difficult to master and that highly impact the layer quality. In this paper, the InGaN p-n junction (PN) and p-i-n junction (PIN) based solar cells are numerically studied using the most realistic models, and optimized through mathematically rigorous multivariate optimization approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for the PN and PIN structures. It also leads to propose, analyze and optimize p-layer free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and a new MIN structure for which the optimal efficiencies are shown to be a little higher than for the conventional structures: respectively 18.2% and 19.8%. The tolerance that is allowed on each parameter for each of the proposed cells has been studied. The new MIN structure is shown to exhibit the widest tolerances on the layers thicknesses and dopings. In addition to its being p-layer free, this is another advantage of the MIN structure since it implies its better reliability. Therefore, these new InGaN SBSC are shown to be alternatives to the conventional structures that allow removing the p-type doping of InGaN while giving photovoltaic (PV) performances at least comparable to the standard multilayers PN or PIN structures.

  6. High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

    NASA Technical Reports Server (NTRS)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

    2005-01-01

    In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

  7. Eight-Bit-Slice GaAs General Processor Circuit

    NASA Technical Reports Server (NTRS)

    Weissman, John; Gauthier, Robert V.

    1989-01-01

    Novel GaAs 8-bit slice enables quick and efficient implementation of variety of fast GaAs digital systems ranging from central processing units of computers to special-purpose processors for communications and signal-processing applications. With GaAs 8-bit slice, designers quickly configure and test hearts of many digital systems that demand fast complex arithmetic, fast and sufficient register storage, efficient multiplexing and routing of data words, and ease of control.

  8. Development of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mcnally, P. J.

    1972-01-01

    This is the second quarterly technical report on a program, the goal of which is to achieve high efficiency GaAs solar cells. Analysis was concerned with providing design information for use in experimentally determining optimum solar cell process parameters. The first quarterly report contained the results of those design calculations. Using those results as a guide, experimental work was initiated to determine optimum cell process parameters. The initial results on this phase of the program are reported.

  9. Piezoelectric field in strained GaAs.

    SciTech Connect

    Chow, Weng Wah; Wieczorek, Sebastian Maciej

    2005-11-01

    This report describes an investigation of the piezoelectric field in strained bulk GaAs. The bound charge distribution is calculated and suitable electrode configurations are proposed for (1) uniaxial and (2) biaxial strain. The screening of the piezoelectric field is studied for different impurity concentrations and sample lengths. Electric current due to the piezoelectric field is calculated for the cases of (1) fixed strain and (2) strain varying in time at a constant rate.

  10. InAs Quantum Dots embedded in GaAs: Properties from Basic Electrical Measurements

    NASA Astrophysics Data System (ADS)

    Sellai, Azzouz; Mesli, Abdelmadjid

    C-V and I-V data from a GaAs Schottky diode in which InAs quantum dots (QDs) were embedded are analyzed. The capacitance due to QDs is fitted with an analytical equation that takes into account Gaussian broadening of sub-band levels and contribution of the wetting layer. The voltage range over which the excess capacitance extends is used to estimate the number of charges contained in the QDs. The energy levels of electrons, entirely confined in the QDs, are computed based on a model in which InAs dots are considered of conical shapes and where the effective mass is taken as both position- and energy-dependent. To reconcile the computed energy values with those from the C-V fits, one has to consider a confinement potential other than the potential due to the GaAs/InAs band discontinuity. I-V data could be analyzed using a model that combines field and thermionic emission processes with two distinct behaviors depending on the temperature and bias. Deviations occur at temperatures above 200 K and voltages above 0.4 V. In comparison with the structure with only the wetting layer, the structure with QDs exhibits an excess current in the low-bias forward regime, an indication of contributions from tunneling electrons.

  11. Surface-modified GaAs terahertz plasmon emitter

    NASA Astrophysics Data System (ADS)

    Darmo, J.; Strasser, G.; Muller, T.; Bratschitsch, R.; Unterrainer, K.

    2002-07-01

    We studied the THz emission from n-GaAs plasmon emitters modified by low-temperature-grown (LT) GaAs surface layers. The THz emission is increased since the LT GaAs pins the Fermi level at a midgap position, increasing the surface depletion field. For a THz emitter with a 70-nm-thick LT GaAs layer we observe without external fields a THz emission intensity of 140 nW. In addition, the long-term performance of the modified emitters is improved by the LT GaAs surface layer.

  12. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  13. High efficiency, low cost thin GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1982-01-01

    The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

  14. Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Menkara, H. M.; Wagner, B. K.; Summers, C. J.

    1996-01-01

    The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

  15. Spectroscopic ellipsometry of homoepitaxial diamond multilayers and delta-doped structures

    SciTech Connect

    Bousquet, J.; Chicot, G.; Eon, D.; Bustarret, E.

    2014-01-13

    The optimization of diamond-based unipolar electronic devices such as pseudo-vertical Schottky diodes or delta-doped field effect transistors relies in part on the sequential growth of nominally undoped (p{sup –}) and heavily boron doped (p{sup ++}) layers with well-controlled thicknesses and steep interfaces. Optical ellipsometry offers a swift and contactless method to characterize the thickness, roughness, and electronic properties of semiconducting and metallic diamond layers. We report ellipsometric studies carried out on delta-doped structures and other epitaxial multilayers with various boron concentrations and thicknesses (down to the nanometer range). The results are compared with Secondary Ion Mass Spectroscopy and transport measurements.

  16. Stability of Electrical and Photovoltaic Characteristics of HBr Solution-Doped Polyacetylene

    NASA Astrophysics Data System (ADS)

    Lee, M. S.; Tzeng, J. S.; Chen, Y. C.; Shiramatsu, T.

    1989-06-01

    Polyacetylene was doped with hydrogen bromide (HBr) solution. The electrical conductivity of the solution-doped polyacetylene increased by an order of six from 5× 10-9 S/cm to 4× 10-3 S/cm. Here the stability of HBr-doped polyacetylene is discussed with respect to the changes in conductivity due to heat treatment and exposure to air, in comparison with I2-doped polyacetylene. The HBr-doped polyacetylene is slightly more stable than the I2-doped polyacetylene. The Al/cis-[CH(HBr)y]x/Au M-S Schottky barrier solar cell was fabricated, and its properties were investigated. The maximum energy conversion efficiency of the cell was 0.9% under the illumination of an incident light intensity of 10 mW/cm2.

  17. Schottky Barrier CdTe(Cl) Detectors for Planetary Missions

    NASA Astrophysics Data System (ADS)

    Eisen, Yosef; Floyd, Samuel

    2002-10-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm × 2mm × 1mm and segmented monolithic 3cm × 3 cm × 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm × 2mm × 1mm CdTe operating at -30°C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm × 3cm × 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed.

  18. Radiation hardness of n-GaN schottky diodes

    SciTech Connect

    Lebedev, A. A. Belov, S. V.; Mynbaeva, M. G.; Strel’chuk, A. M.; Bogdanova, E. V.; Makarov, Yu. N.; Usikov, A. S.; Kurin, S. Yu.; Barash, I. S.; Roenkov, A. D.; Kozlovski, V. V.

    2015-10-15

    Schottky-barrier diodes with a diameter of ∼10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm{sup –1}. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.

  19. Bias stress instability involving subgap state transitions in a-IGZO Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Qian, Huimin; Wu, Chenfei; Lu, Hai; Xu, Weizong; Zhou, Dong; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2016-10-01

    Vertical Schottky barrier diodes (SBDs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) with either a top or bottom Schottky contact are fabricated by controlling the oxygen partial pressure during a-IGZO deposition. Although Au electrodes are employed for both Schottky and Ohmic contacts, it is found that Schottky contacts are preferentially formed on a-IGZO film in lower oxygen vacancy concentrations. The effect of negative bias stress on device performance is studied. The Schottky barrier height and series resistance of the a-IGZO SBD are found to increase upon negative bias stress, which is correlated with a reduction of the trap state and background carrier concentration within the a-IGZO film. A physical model based on subgap state transitions from ionized V\\text{O}2+ states to neutralized V O states is proposed to explain the observed electrical instability behavior.

  20. DX centers in Sn-doped Ga0.7Al0.3As

    NASA Astrophysics Data System (ADS)

    Hayes, T. M.; Williamson, D. L.; Outzourhit, A.; Small, P.; Gibart, P.; Rudra, A.

    1989-03-01

    We have measured and analyzed the extended fine structure on the Sn K-shell x-ray absorption spectra of GaAs and Ga0.7Al0.3As doped with ˜5 x 1018 cm-3 Sn. Our results and their implications for the atomic structure of DX centers are discussed.

  1. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    SciTech Connect

    Li, Baikui; Tang, Xi; Chen, Kevin J.; Wang, Jiannong

    2014-07-21

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

  2. Panel fabrication utilizing GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  3. Quantum Confinement by Schottky Barriers and its Consequences

    NASA Astrophysics Data System (ADS)

    Chiang, T.-C.

    2005-03-01

    Atomically uniform Pb and Ag films have been successfully grown on Si(111) and Ge(111), respectively, despite a large lattice mismatch in each case. The resulting Schottky barrier at the interface confines the electrons in the film to form quantum well states or subbands. The electronic structure of the film including the ground state wave function can be significantly different from the bulk case, leading to substantial variations in physical properties as a function of film thickness. These variations generally follow a damped oscillatory curve riding on an approximately 1 / 1 N^x . - N^x baseline function, with the exponent x often close to unity. The oscillatory behavior is similar to the shell effect associated with the periodic property variations of elements in the period table. This talk discusses the basic electronic structure of thin metal films as measured by angle-resolved photoemission and the connections to physical properties including the surface energy, thermal stability, density of states, electron-phonon coupling, etc. Quantum size effects can also affect morphological evolution during film growth and heat treatment. The Schottky barrier can be modified by the use of interfactants, and experimental results will be presented to illustrate the utility of this method for quantum control and engineering. In collaboration with M. Upton, D. Ricci, P. Czoschke, L. Basile, S. J. Tang, Hawoong Hong, J. J. Paggel, D.-A. Luh, and T. Miller.

  4. All-back-Schottky-contact thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Nardone, Marco

    2016-02-01

    The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic (TFPV) devices is introduced and evaluated using 2D numerical simulation. Reach-through Schottky junctions due to two metals of different work functions in an alternating, side-by-side pattern along the non-illuminated side generate the requisite built-in field. It is shown that our simulation method quantitatively describes existing data for a recently demonstrated heterojunction thin-film cell with interdigitated back contacts (IBCs) of one metal type. That model is extended to investigate the performance of ABSC devices with bimetallic IBCs within a pertinent parameter space. Our calculations indicate that 20% efficiency is achievable with micron-scale features and sufficient surface passivation. Bimetallic, micron-scale IBCs are readily fabricated using photo-lithographic techniques and the ABSC design allows for optically transparent surface passivation layers that need not be electrically conductive. The key advantages of the ABSC-TFPV architecture are that window layers, buffer layers, heterojunctions, and module scribing are not required because both contacts are located on the back of the device.

  5. Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy

    NASA Astrophysics Data System (ADS)

    Matsuzaka, S.; Ohno, Y.; Ohno, H.

    2009-12-01

    We studied electron density (n) dependence of the extrinsic spin Hall effect in n -doped GaAs with n raging from 1.8×1016 to 3.3×1017cm-3 . By scanning Kerr microscopy measurements, we observed spin accumulation near the channel edges in all the samples due to the extrinsic spin Hall effect. The spin Hall conductivity σSH is obtained for each sample by comparing the Kerr rotation induced by optically injected spins. σSH is found to increase with n , and it is shown that a theoretical model reported earlier agrees well with the experimental n dependence of σSH .

  6. Peeled film GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Wilt, D. M.; Thomas, R. D.; Bailey, S. G.; Brinker, D. J.; Deangelo, F. L.

    1990-01-01

    Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

  7. Ion implanted GaAs microwave FET's

    NASA Astrophysics Data System (ADS)

    Gill, S. S.; Blockley, E. G.; Dawsey, J. R.; Foreman, B. J.; Woodward, J.; Ball, G.; Beard, S. J.; Gaskell, J. M.; Allenson, M. B.

    1988-06-01

    The combination of ion implantation and photolithographic patterning techniques was applied to the fabrication of GaAs microwave FETs to provide a large number of devices having consistently predictable dc and high frequency characteristics. To validate the accuracy and repeatability of the high frequency device parameters, an X-band microwave circuit was designed and realized. The performance of this circuit, a buffered amplifier, is very close to the design specification. The availability of a large number of reproducible, well-characterized transistors enabled work to commence on the development of a large signal model for FETs. Work in this area is also described.

  8. Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates. Final Report, 29 May 1981-28 May 1982

    SciTech Connect

    Chen, R.T.

    1983-06-01

    Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

  9. Airplane dopes and doping

    NASA Technical Reports Server (NTRS)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  10. Polarization and charge limit studies of strained GaAs photocathodes

    SciTech Connect

    Saez, P.J.

    1997-03-01

    This thesis presents studies on the polarization and charge limit behavior of electron beams produced by strained GaAs photocathodes. These photocathodes are the source of high-intensity, high-polarization electron beams used for a variety of high-energy physics experiments at the Stanford Linear Accelerator Center. Recent developments on P-type, biaxially-strained GaAs photocathodes have produced longitudinal polarization in excess of 80% while yielding beam intensities of {approximately} 2.5 A/cm{sup 2} at an operating voltage of 120 kV. The SLAC Gun Test Laboratory, which has a replica of the SLAC injector, was upgraded with a Mott polarimeter to study the polarization properties of photocathodes operating in a high-voltage DC gun. Both the maximum beam polarization and the maximum charge obtainable from these photocathodes have shown a strong dependence on the wavelength of illumination, on the doping concentration, and on the negative electron affinity levels. The experiments performed for this thesis included studying the effects of temperature, cesiation, quantum efficiency, and laser intensity on the polarization of high-intensity beams. It was found that, although low temperatures have been shown to reduce the spin relaxation rate in bulk semiconductors, they don`t have a large impact on the polarization of thin photocathodes. It seems that the short active region in thin photocathodes does not allow spin relaxation mechanisms enough time to cause depolarization. Previous observations that lower QE areas on the photocathode yield higher polarization beams were confirmed. In addition, high-intensity, small-area laser pulses were shown to produce lower polarization beams. Based on these results, together with some findings in the existing literature, a new proposal for a high-intensity, high-polarization photocathode is given. It is hoped that the results of this thesis will promote further investigation on the properties of GaAs photocathodes.

  11. Theory of Spin Hall Effect in GaAs

    NASA Astrophysics Data System (ADS)

    Engel, Hans-Andreas

    2006-03-01

    In the spin Hall effect, an electric current in a system with spin-orbit coupling induces a transverse spin current which leads to non-equilibrium spin accumulation near sample boundaries. Generating and manipulating non-equilibrium spin magnetization by electric fields is one of the most desirable goals of semiconductor spintronics, because electric fields have potentialities for accessing individual spins at nanometer scales. In this talk, I review the different spin-orbit coupling mechanisms in direct gap semiconductors and the implications of these mechanisms for the spin Hall effect. In particular, we recently developed a theory that accounts for spin-orbit coupling at charged impurities. This coupling leads to extrinsic spin currents that contain skew scattering and side jump contribution [1]. Applying our theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with recent experiments by Kato et al. [2]. Also, such contributions are important for p-doped GaAs. Furthermore, we analyzed the effect of intrinsic spin-orbit coupling in the presence of anisotropic impurity scattering, and found that, somewhat surprisingly, an electrical field can lead to a bulk magnetization component perpendicular to both the spin-orbit field and an external magnetic field. These works have been done in collaboration with B.I. Halperin, E.I. Rashba, and A.A. Burkov. [1] H.-A. Engel, B.I. Halperin, and E.I. Rashba, Phys. Rev.Lett. 95, 166605 (2005). [2] Y.K. Kato, R.C. Myers, A.C. Gossard, and D.D. Awschalom, Science 306, 1910 (2004).

  12. Schottky junctions on semi-insulating LEC gallium arsenide for X- and {gamma}-ray spectrometers operated at and below room temperature

    SciTech Connect

    Bertuccio, G.; Pullia, A. |; Canali, C. |; Nava, F. |; Lanzieri

    1997-04-01

    This work deals with the study of a Schottky junction used as an X- and {gamma}-ray detector in a spectrometer operated in the temperature range from {minus}30 C to +22 C. The device, fabricated on liquid encapsulated Czochralski (LEC) semi-insulating Gallium Arsenide, is designed with a noninjecting ohmic contact which allows biasing voltages up to 550 V. At room temperature (22 C) the energy resolution is found to be relatively poor (15.5-keV full-width at half-maximum (FWHM) at 59.5 keV) due to the large junction reverse current, whose density is within the typical values for Schottky junctions on SI LEC GaAs. By cooling of the detector to {minus}30 C, the noise of the reverse current is drastically lowered, thus achieving electronic noise levels around 160--180 rms electrons. At 500-V bias, the {sup 241}Am spectrum has been resolved down to an energy of 4 keV with charge collection efficiency of cce = 97% and a resolution of about 2-keV FWHM for the Np L lines and 2.4-keV FWHM for the 59.5-keV {gamma} photons. The linearity of the detector has been measured to be better than {+-}0.6% within the explored energy range (14--59 keV). From the experimental spectra, it has been analyzed how either the electronic noise or the trapping of the signal charge contribute to the energy resolution of the spectrometer. The result is that despite the high measured cce, the trapping gives a contribution higher than 1.5 keV FWHM for the 59.5-keV spectral line. A comparison between the experimental results and Monte Carlo simulations, based on the Hecht model of charge trapping in detectors, is shown to give a satisfactory justification of the observed phenomena.

  13. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  14. Spin Current Amplification in Presence of Nonuniform Doping

    NASA Astrophysics Data System (ADS)

    Mirzaee, Sh.; Soleimani, H. Rahimpour

    In this paper, for the first time in our knowledge, the influence of nonuniform and continuous doping in semiconductor on amplification of spin polarization current especially in n-type GaAs semiconductor have been studied. Numerical calculations based on a selfconsistent solution of the continuity equation, the Poisson equation and rate-equation are used to explain the amplification of spin polarization density. The influences of the diffusion coefficient (Dn) and relaxation time (τsf) on the spin polarization density are also studied. The amplifying effect of nonuniform doping on spin polarization density is important because it might have many applications in spintronic devices.

  15. Explanation of the barrier heights of graphene Schottky contacts by the MIGS-and-electronegativity concept

    NASA Astrophysics Data System (ADS)

    Mönch, Winfried

    2016-09-01

    Graphene-semiconductor contacts exhibit rectifying properties and, in this respect, they behave in exactly the same way as a "conventional" metal-semiconductor or Schottky contacts. It will be demonstrated that, as often assumed, the Schottky-Mott rule does not describe the reported barrier heights of graphene-semiconductor contacts. With "conventional" Schottky contacts, the same conclusion was reached already in 1940. The physical reason is that the Schottky-Mott rule considers no interaction between the metal and the semiconductor. The barrier heights of "conventional" Schottky contacts were explained by the continuum of metal-induced gap states (MIGSs), where the differences of the metal and semiconductor electronegativities describe the size and the sign of the intrinsic electric-dipoles at the interfaces. It is demonstrated that the MIGS-and-electronegativity concept unambiguously also explains the experimentally observed barrier heights of graphene Schottky contacts. This conclusion includes also the barrier heights reported for MoS2 Schottky contacts with "conventional" metals as well as with graphene.

  16. X-point Shallow Donors in GaAs under pressure

    NASA Astrophysics Data System (ADS)

    Hsu, L.; Haller, E. E.

    1996-03-01

    Transitions from the ground to bound excited states associated with shallow donors in GaAs under large hydrostatic pressure are studied with IR absorption spectroscopy. A modified Merrill-Basset diamond anvil cell was used to apply hydrostatic pressures of several GPa to lightly doped ( 10^15 cm-3) n-type GaAs samples. At such pressures, the energy of the conduction band at the X point falls below that at the Γ point and the wavefunctions of donor impurities take on X-band character. The deep DX centers which exist at these pressures were converted to shallow donors by illumination at low temperature with a red LED. The X-band absorption spectra for Sn and Si show one line each at 50 and 61 meV, respectively. The spectrum for S shows a broad absorption starting at 90 meV, which shifts to lower energies with increasing pressure. The presence of only one line in the Si and Sn spectra can be explained by the non-parabolicity of the X-point conduction band minimum. The binding energies of these donors are estimated to be 74, 85, and 117 meV for Sn, Si, and S respectively. This work supported by USNSF DMR-94 17763.

  17. The role of d levels of substitutional magnetic impurities at the (110) GaAs surface

    NASA Astrophysics Data System (ADS)

    Mahani, M. R.; Pertsova, Anna; Islam, Fhokrul; Canali, C. M.

    2013-03-01

    The study of the spin of individual transition-metal dopants in a semiconductor host is an emergent field known as magnetic solotronics, bearing exciting prospects for novel spintronics devices at the atomic scale. Advances in different STM based techniques allowed experimentalists to investigate substitutional dopants at a semiconductor surface with unprecedented accuracy and degree of details. Theoretical studies based both on microscopic tight-binding (TB) models and DFT techniques have contributed in elucidating the experimental findings. In particular, for the case of Mn dopants on the (110) GaAs surface, TB models have provided a quantitative description of the properties of the associated acceptor states. Most of these TB calculations ignore dealing explicitly with the Mn d-levels and treat the associated magnetic moment as a classical vector. However recent STM experiments involving other TM impurities, such as Fe, reveal topographic features that might be related to electronic transitions within the d-level shell of the dopant. In this work we have included explicitly the d levels in the Hamiltonian. The parameters of the model have been extracted from DFT calculations. We have investigated the role that d levels play on the properties of the acceptor states of the doped GaAs(110) surface, and analyzed their implications for STM spectroscopy.

  18. Plasma-induced-damage of GaAs during etching of refractory metal contacts

    SciTech Connect

    Shul, R.J.; Lovejoy, M.L.; Baca, A.G.; Zolper, J.C.; Rieger, D.J.; Hafich, M.J.; Corless, R.F.; Vartuli, C.R.

    1994-10-01

    The effect of plasma-induced-damage on the majority carrier transport properties of GaAs has been studied by monitoring changes in sheet resistance (R{sub s}) of thin conducting layers under various plasma conditions including etch conditions for refractory metal contacts. R{sub s} determined from transmission line measurements are used to evaluate plasma-induced-damage for electron cyclotron resonance (ECR) and reactive ion etch (RIE) conditions by varying the thickness of doped epitaxial layers. The authors speculate that plasma-induced-damage in the near surface region plays a major role in explaining the damage mechanism observed in this study. Very consistent trends have been observed where R{sub s} increases with increasing ECR and RIE dc-bias, increasing microwave power, and decreasing pressure, thus showing R{sub s} increases as either the ion energy or ion flux increases. The authors have also observed that R{sub s} is lower for samples exposed to the RIE than the ECR, possibly due to higher ion and electron densities generated in the ECR and higher pressures in the RIE. It has also been observed R{sub s} dependence on ECR plasma chemistry where, R{sub s} is lower in SF{sub 6}/Ar plasmas than Ar and N{sub 2} plasmas possibly related to interactions of F or S atoms with the GaAs surface. Moderate anneal temperatures (200 to 500{degrees}C) have shown significant R{sub s} recovery.

  19. Dyakonov-Perel Effect on Spin Dephasing in n-Type GaAs

    NASA Technical Reports Server (NTRS)

    Ning, C. Z.; Wu, M. W.

    2003-01-01

    A paper presents a study of the contribution of the Dyakonov-Perel (DP) effect to spin dephasing in electron-donor-doped bulk GaAs in the presence of an applied steady, moderate magnetic field perpendicular to the growth axis of the GaAs crystal. (The DP effect is an electron-wave-vector-dependent spin-state splitting of the conduction band, caused by a spin/orbit interaction in a crystal without an inversion center.) The applicable Bloch equations of kinetics were constructed to include terms accounting for longitudinal optical and acoustic phonon scattering as well as impurity scattering. The contributions of the aforementioned scattering mechanisms to spin-dephasing time in the presence of DP effect were examined by solving the equations numerically. Spin-dephasing time was obtained from the temporal evolution of the incoherently summed spin coherence. Effects of temperature, impurity level, magnetic field, and electron density on spin-dephasing time were investigated. Spin-dephasing time was found to increase with increasing magnetic field. Contrary to predictions of previous simplified treatments of the DP effect, spin-dephasing time was found to increase with temperature in the presence of impurity scattering. These results were found to agree qualitatively with results of recent experiments.

  20. Individual iso-electronic N and Bi centers in GaAs studied by Scanning Tunneling Microscopy

    NASA Astrophysics Data System (ADS)

    Koenraad, Paul; Krammel, Christian; Plantenga, Rianne; Kortan, Victoria; Flatté, Michael; Tilley, Freddy; Roy, Mervin; Maksym, Peter; Kita, Takashi

    Nitrogen and bismuth iso-electronic doping centers in GaAs have received considerable interest in the last few years due to their peculiar behaviour in dilute nitrides and bismides. In these materials effects such as a strong band bowing and the formation of resonant states in respectively the conduction and valence band have been reported. In this contribution we will report our exploration of individual nitrogen and bismuth atoms in the outermost layers of a freshly cleaved (110) GaAs surface by STM. Depending on the tunnel conditions we are able to either visualise the lattice distortion or image the charge distribution of the resonant state. We clearly observe that nitrogen pulls its neighbouring atoms inwards whereas bismuth pushes its neighbouring atoms away. A straightforward geometrical model based on the covalent radii of the dopants and substrate atoms is used to interpret the observed crystal deformation seen in our STM images of nitrogen and bismuth under the appropriate tunnel conditions. At small positive voltages we could observe the charge distribution of the resonant state induced by iso-electronic nitrogen atoms in GaAs. Tight Binding Modelling (TBM) was used to explain the observed strongly anisotropic charge distribution.

  1. Semi-insulating GaAs detectors with HDPE layer for detection of fast neutrons from D-T nuclear reaction

    NASA Astrophysics Data System (ADS)

    Sagatova, Andrea; Zatko, Bohumir; Sedlackova, Katarina; Pavlovic, Marius; Necas, Vladimir; Fulop, Marko; Solar, Michael; Granja, Carlos

    2016-09-01

    Bulk semi-insulating (SI) GaAs detectors optimized for fast-neutron detection were examined using mono-energetic neutrons. The detectors have an active area of 7.36 mm2 defined by a multi-pixel structure of a AuZn Schottky contact allowing a relatively high breakdown voltage (300 V) sufficient for full depletion of the detector structure. The Schottky contact is covered by a HDPE (high density polyethylene) conversion layer, where neutrons transfer their kinetic energy to hydrogen atoms through elastic nuclear collisions. The detectors were exposed to mono-energetic neutrons generated by a deuterium (D)-tritium (T) nuclear reaction at a Van de Graaff accelerator. Neutrons reached a kinetic energy of 16.8 MeV when deuterons were accelerated by 1 MV potential. The influence of the HDPE layer thickness on the detection efficiency of the fast neutrons was studied. The thickness of the conversion layer varied from 50 μm to 1300 μm. The increase of the HDPE layer thickness led to a higher detection efficiency due to higher conversion efficiency of the HDPE layer. The effect of the active detector thickness modified by the detector reverse bias voltage on the detection efficiency was also evaluated. By increasing the detector reverse voltage, the detector active volume expands to the depth and also to the sides, slightly increasing the neutron detection efficiency.

  2. GaAs VLSI for aerospace electronics

    NASA Technical Reports Server (NTRS)

    Larue, G.; Chan, P.

    1990-01-01

    Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

  3. Implantation of carbon in GaAs

    SciTech Connect

    Moll, A.J.

    1992-03-01

    Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

  4. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    SciTech Connect

    Xia, Congxin Xue, Bin; Wang, Tianxing; Peng, Yuting; Jia, Yu

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  5. Optical properties of thin gold films applied to Schottky barrier solar cells

    NASA Technical Reports Server (NTRS)

    YEH Y. M.

    1974-01-01

    The Schottky barrier solar cell is considered a possible candidate for converting solar to electrical energy both for space and terrestrial applications. Knowledge of the optical constants of the ultrathin metal film used in the cell is essential for analyzing and designing higher efficiency Schottky barrier cells. The optical constants of 7.5 -nm (75-A) gold films on gallium arsenide have been obtained. In addition, the absolute collection efficiency of Schottky barrier solar cells has been determined from measured spectral response and optical constants of the gold film.

  6. Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction.

    PubMed

    Gao, Fan; Morshed, Muhammad M; Bashar, Sunayna B; Zheng, Youdou; Shi, Yi; Liu, Jianlin

    2015-06-01

    Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction diode is demonstrated. The device exhibits typical Schottky diode current-voltage characteristics with a turn-on voltage of 0.7 V. Electroluminescence characterization shows good random lasing behavior and the output power is about 67 nW at a drive current of 100 mA. Excitonic recombination is responsible for lasing generation. Zn plasma is only observed under high applied bias, which can be distinguished from the random lasing spectral features near 380 nm. The laser diode based on the Schottky junction provides an alternative approach towards semiconductor random lasers. PMID:25946977

  7. The development of integrated chemical microsensors in GaAs

    SciTech Connect

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  8. Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung’s model

    NASA Astrophysics Data System (ADS)

    Korucu, Demet; Turut, Abdulmecit; Efeoglu, Hasan

    2013-04-01

    The current-voltage (I-V) characteristics of Au/n-GaAs contacts prepared with photolithography technique have been measured in the temperature range of 80-320 K. The ideality factor and barrier height (BH) values have remained almost unchanged between 1.04 and 1.10 and at a value of about 0.79 eV at temperatures above 200 K, respectively. Therefore, the ideality factor values near unity say that the experimental I-V data are almost independent of the sample temperature, that is, contacts have shown excellent Schottky diode behavior above 200 K. An abnormal decrease in the experimental BH Φb and an increase in the ideality factor with a decrease in temperature have been observed below 200 K. This behavior has been attributed to the barrier inhomogeneity by assuming a Gaussian distribution of nanometer-sized patches with low BH at the metal-semiconductor interface. The barrier inhomogeneity assumption is also confirmed by the linear relationship between the BH and the ideality factor. According to Tung’s barrier inhomogeneity model, it has been seen that the value of σT=7.41×10-5 cm2/3 V1/3from ideality factor versus (kT)-1 curve is in close agreement with σT=7.95×10-5 cm2/3 V1/3 value from the Φeff versus (2kT)-1 curve in the range of 80-200 K. The modified Richardson ln(J0/T2)-(qσT)2(Vb/η)2/3/[2(kT)2] versus (kT)-1 plot, from Tung’s Model, has given a Richardson constant value of 8.47 A cm-2 K-2which is in very close agreement with the known value of 8.16 A cm-2 K-2 for n-type GaAs; considering the effective patch area which is significantly lower than the entire geometric area of the Schottky contact, in temperature range of 80-200 K. Thus, it has been concluded that the use of Tung’s lateral inhomogeneity model is more appropriate to interpret the temperature-dependent I-V characteristics in the Schottky contacts.

  9. Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications

    NASA Astrophysics Data System (ADS)

    Jolly, S. T.; Narayan, S. Y.; Paczkowski, J. P.; Capewell, D.

    1982-09-01

    Vapor-phase epitaxy (VPE) systems for the growth of 1) GaAs on Cr-doped GaAs substrates, and 2) lattice matched GaInAs and GaInAsP on Fe-doped InP substrates are briefly described. Layer composition of the ternary and quaternary compounds were measured by electron probe microanalysis, lattice mismatch by X-ray diffractometry, average carrier concentration and mobility determined using the Van der Pauw technique. Carrier profiles were investigated using an electro-chemical profiler. Several hundred n-type Ga0.47In0.53As/InP structures have been grown and characterized. Unintentionally-doped layers with a carrier concentration of 2x1015cm-3 and μ(300) and μ(77) of 11x103 and 38x103cm2V-ls-1, respectively, were realized. These represent the highest mobility values reported for VPE Ga0.47In0.53As at this doping level. Se-doped n-layers ranging in thickness from 0.2 to several μm and with carrier density from 1x1016 cm to 3x1018cm-3 + were grown. n-n structures with sharp n+-n transitions were grown for device fabrication studies. The doping profile of a 2 cm x 1 cm ternary layer grown using a rotating substrate holder was found to be fairly uniform; this n+-n wafer had an n+-layer doping of 1.6+/-0.1x1018cm-3, n+-layer thickness of 0.31+/-0.01 μm, n-layer doping of 9.5+/-0.5x101bcm-3, and n-layer thickness of 0.3+/-0.03 μm. The mobility profile of submicrometer n-layers was measured using the differential Van der Pauw technique. The high mobility was found to be maintained down to the ternary-substrate interface.

  10. Neutron irradiation effects on gallium nitride-based Schottky diodes

    SciTech Connect

    Lin, Chung-Han; Katz, Evan J.; Zhang, Zhichun; Qiu, Jie; Cao, Lei; Mishra, Umesh K.; Brillson, Leonard J.

    2013-10-14

    Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties.

  11. Electrical characterization of MEH-PPV based Schottky diodes

    NASA Astrophysics Data System (ADS)

    Nimith, K. M.; Satyanarayan, M. N.; Umesh, G.

    2016-05-01

    MEH-PPV Schottky diodes with and without Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) have been fabricated and characterized. The highlight of this work is that all the fabrication and characterization steps had been carried out in the ambient conditions and the device fabrication was done without any UV-Ozone surface treatment of ITO anodes. Current Density-Voltage characteristics shows that the addition of hole injection layer (HIL) enhances the charge injection into the polymer layer by reducing the energy barrier across the Indium Tin Oxide (ITO)-Organic interface. The rectification ratio increases to 2.21 from 0.76 at 5V for multilayer devices compared to single layer devices. Further we investigated the effect of an alkali metal fluoride (LiF) by inserting a thin layer in between the organic layer and Aluminum (Al) cathode. The results of these investigations will be discussed in detail.

  12. The physics and chemistry of the Schottky barrier height

    SciTech Connect

    Tung, Raymond T.

    2014-03-15

    The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

  13. Improved cell design for Schottky barrier infrared detector arrays

    NASA Astrophysics Data System (ADS)

    Shepherd, Freeman D.; Mooney, Jonathan M.; Tzannes, Alexis P.; Murguia, James E.

    1995-09-01

    The responsivity of large scale platinum silicide arrays, having small pixels, is low compared to the responsivity of large area test diodes fabricated on the same wafer. Often, the responsivity loss is described by assigning a lower Fowler emission coefficient to the detectors. We find the reduced responsivity to be the direct result of a reduction in the effective active area of the detector. This reduction in effective active area becomes more pronounced as the detector cell size is reduced. We provide a simple model for the area reduction in terms of modulation of detector Schottky potential by the underlying depletion region of the detector guard ring. We also suggest changes in the detector array unit cell design, which will maximize responsivity.

  14. The physics and chemistry of the Schottky barrier height

    NASA Astrophysics Data System (ADS)

    Tung, Raymond T.

    2014-03-01

    The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

  15. The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

    SciTech Connect

    Grot, S.A.; Gildenblat, G.S.; Hatfield, C.W.; Wronski, C.R. . Dept. of Electrical Engineering); Badzian, A.R.; Badzian, T.; Messier, R. . Materials Research Lab.)

    1990-02-01

    Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) {ital I-V} characteristics of the Au/diamond contacts, regardless of the doping level. The proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400{degrees}C.

  16. Modelling the inhomogeneous SiC Schottky interface

    NASA Astrophysics Data System (ADS)

    Gammon, P. M.; Pérez-Tomás, A.; Shah, V. A.; Vavasour, O.; Donchev, E.; Pang, J. S.; Myronov, M.; Fisher, C. A.; Jennings, M. R.; Leadley, D. R.; Mawby, P. A.

    2013-12-01

    For the first time, the I-V-T dataset of a Schottky diode has been accurately modelled, parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch-off and resistance, and ideality factors that are both heavily temperature and voltage dependent. A Ni/SiC Schottky diode is characterised at 2 K intervals from 20 to 320 K, which, at room temperature, displays low ideality factors (n < 1.01) that suggest that these diodes may be homogeneous. However, at cryogenic temperatures, excessively high (n > 8), voltage dependent ideality factors and evidence of the so-called "thermionic field emission effect" within a T0-plot, suggest significant inhomogeneity. Two models are used, each derived from Tung's original interactive parallel conduction treatment of barrier height inhomogeneity that can reproduce these commonly seen effects in single temperature I-V traces. The first model incorporates patch pinch-off effects and produces accurate and reliable fits above around 150 K, and at current densities lower than 10-5 A cm-2. Outside this region, we show that resistive effects within a given patch are responsible for the excessive ideality factors, and a second simplified model incorporating these resistive effects as well as pinch-off accurately reproduces the entire temperature range. Analysis of these fitting parameters reduces confidence in those fits above 230 K, and questions are raised about the physical interpretation of the fitting parameters. Despite this, both methods used are shown to be useful tools for accurately reproducing I-V-T data over a large temperature range.

  17. Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires

    SciTech Connect

    Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.; Choi, J. W.; Ji, H.; Kim, G. T.

    2011-12-23

    Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

  18. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1988-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 1017 cm-3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  19. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1990-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 10 17 cm -3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm 2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  20. Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source

    SciTech Connect

    Boucher, Jason; Ritenour, Andrew; Boettcher, Shannon W.

    2013-04-29

    Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source GaAs is an attractive material for thin-film photovoltaic applications, but is not widely used for terrestrial power generation due to the high cost of metal-organic chemical vapor deposition (MOCVD) techniques typically used for growth. Close space vapor transport is an alternative that allows for rapid growth rates of III-V materials, and does not rely on the toxic and pyrophoric precursors used in MOCVD. We characterize CSVT films of GaAs using photoelectrochemical current-voltage and quantum efficiency measurements. Hole diffusion lengths which exceed 1.5 um are extracted from internal quantum efficiency measurements using the Gartner model. Device physics simulations suggest that solar cells based on these films could reach efficiencies exceeding 24 %. To reach this goal, a more complete understanding of the electrical properties and characterization of defects will be necessary, including measurements on complete solid-state devices. Doping of films is achieved by using source material containing the desired impurity (e.g., Te or Zn). We discuss strategies for growing III-V materials on inexpensive substrates that are not lattice-matched to GaAs.

  1. Measuring the magnetic-field-dependent chemical potential of a low-density three-dimensional electron gas in n -GaAs and extracting its magnetic susceptibility

    NASA Astrophysics Data System (ADS)

    Roy Choudhury, Aditya N.; Venkataraman, V.

    2016-01-01

    We report the magnetic-field-dependent shift of the electron chemical potential in bulk, n -type GaAs at room temperature. A transient voltage of ˜100 μ V was measured across a Au-Al2O3 -GaAs metal-oxide-semiconductor capacitor in a pulsed magnetic field of ˜6 T . Several spurious voltages larger than the signal that had plagued earlier researchers performing similar experiments were carefully eliminated. The itinerant magnetic susceptibility of GaAs is extracted from the experimentally measured data for four different doping densities, including one as low as 5 ×1015cm-3 . Though the susceptibility in GaAs is dominated by Landau-Peierls diamagnetism, the experimental technique demonstrated can be a powerful tool for extracting the total free carrier magnetization of any electron system. The method is also virtually independent of the carrier concentration and is expected to work better in the nondegenerate limit. Such experiments had been successfully performed in two-dimensional electron gases at cryogenic temperatures. However, an unambiguous report on having observed this effect in any three-dimensional electron gas has been lacking. We highlight the 50 year old literature of various trials and discuss the key details of our experiment that were essential for its success. The technique can be used to unambiguously yield only the itinerant part of the magnetic susceptibility of complex materials such as magnetic semiconductors and hexaborides, and thus shed light on the origin of ferromagnetism in such systems.

  2. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  3. Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces

    NASA Astrophysics Data System (ADS)

    Sasaki, Masahiro; Yoshida, Seikoh; Yamada, Chikashi

    1993-10-01

    The reactivity of GaAs and GaAs oxide surfaces to trimethylgallium (TMG) was studied by temperature-programmed scattering (TPS) through the energy accommodation coefficient (EAC). The substrate temperature was increased at a constant rate while the scattered TMG was being measured under a constant flux of TMG supplied to the substrate by a cryo-shrouded quadrupole mass spectrometer. Since the detection efficiency of the spectrometer is inversely proportional to the translational velocity of scattered TMG, the observed intensity variation represents the change in translational velocity of reflected TMG during the temperature increase. The variation of the signal intensities was least-squares analyzed to yield the EAC, which is a measure of the surface reactivity. The thus-obtained reactivity of photo-oxidized GaAs to TMG is smaller than that of dark-oxidized GaAs, which is even smaller than that of a bare GaAs surface. This difference in the reactivity is discussed in relation to the mechanism of selective area growth of GaAs using GaAs oxide as a mask.

  4. GaAs VLSI technology and circuit elements for DSP

    NASA Astrophysics Data System (ADS)

    Mikkelson, James M.

    1990-10-01

    Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability

  5. Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices

    NASA Astrophysics Data System (ADS)

    Hüdai Taşdemir, İbrahim; Vural, Özkan; Dökme, İlbilge

    2016-06-01

    Electrical devices involve different types of diode in prospective electronics is of great importance. In this study, p-type Si surface was covered with thin film of TiO2 dispersion in H2O to construct p-Si/TiO2/Al Schottky barrier diode (D1) and the other one with TiO2 dispersion doped with zirconium to construct p-Si/TiO2-Zr/Al diode (D2) by drop-casting method in the same conditions. Electrical properties of as-prepared diodes and effect of zirconium as a dopant were investigated. Current-voltage (I-V) characteristics of these devices were measured at ambient conditions. Some parameters including ideality factor (n), barrier height (ΦB0), series resistance (Rs) and interface state density (Nss) were calculated from I-V behaviours of diodes. Structural comparisons were based on SEM and EDX measurements. Experimental results indicated that electrical parameters of p-Si/TiO2/Al Schottky device were influenced by the zirconium dopant in TiO2.

  6. Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

    NASA Astrophysics Data System (ADS)

    Cywiński, G.; Szkudlarek, K.; Kruszewski, P.; Yahniuk, I.; Yatsunenko, S.; Muzioł, G.; Skierbiszewski, C.; Knap, W.; Rumyantsev, S. L.

    2016-07-01

    Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n = 1.2-1.25 and apparent barrier height φb = (0.59-0.63) eV. The noise measurements within the frequencies range from 1 Hz to 50 kHz showed that the diodes demonstrated the superposition of 1/f and generation recombination noise. In spite of extremely small area of lateral Schottky diodes, the amplitude of noise was similar or even smaller than that for AlGaN and GaN Schottky diodes with the regular contact. This makes GaN-based lateral Schottky diodes to be very promising devices for RF and terahertz applications.

  7. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates.

    PubMed

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-19

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  8. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

    NASA Astrophysics Data System (ADS)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-01

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  9. Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

    NASA Astrophysics Data System (ADS)

    Descouts, B.; Duhamel, N.; Godefroy, S.; Krauz, P.

    Ion implantation in semiconductors provides a doping technique with several advantages over more conventional doping methods and is now extensively used for device applications, e.g. field effect transistors (MESFET GaAs, MIS (InP), GaAs/GaAlAs heterojunction bipolar transistors (HBT). Because of the lattice disorder produced by the implantation, the dopant must be made electrically active by a postimplant anneal. As the device performances are very dependent on its electrical characteristics, the anneal is a very important stage of the process. Rapid anneal is known to provide less exodiffusion and less induffusion of impurities compared to conventional furnace anneal, so this technique has been used in this work to activate an n-type dopant (Si) in InP and a p-type dopant (Mg) in GaAs and GaAs/GaAIAs. These two ions have been chosen to realize implanted MIS InP and the base contacts for GaAs/GaAlAs HBTs. The experimental conditions to obtain the maximum electrical activity in these two cases will be detailed. For example, although we have not been able to obtain a flat profile in Mg + implanted GaAs/GaAlAs heterostructure by conventional thermal anneal, rapid thermal anneal gives a flat hole profile over a depth of 0.5 μm with a concentration of 1 x 10 19 cm -3.

  10. Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen δ-doping technique

    SciTech Connect

    Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki; Elborg, Martin; Sakoda, Kazuaki

    2014-05-15

    GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen δ-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen δ-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

  11. Slot plasmonic waveguide based on doped-GaAs for terahertz deep-subwavelength applications.

    PubMed

    Amarloo, Hadi; Safavi-Naeini, Safieddin

    2015-11-01

    A new plasmonic waveguide for deep-subwavelength field localization at the terahertz (THz) range of frequency is proposed. GaAs with optimum doping level is used as the plasmonic material. The waveguide structure is a narrow slot in a thin GaAs film on top of the quartz substrate. The waveguide characteristics are analyzed, and its dimensions are optimized to minimize the losses. It is shown that the mode size of the proposed waveguide is less than λ/16 by λ/16. The proposed plasmonic waveguide can be a platform for numerous THz plasmonic-based integrated devices, such as integrated sensors and imagers.

  12. Development and fabrication of improved Schottky power diodes, phases I and II

    NASA Technical Reports Server (NTRS)

    Cordes, L. F.; Garfinkle, M.; Taft, E. A.

    1974-01-01

    Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

  13. On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

    NASA Astrophysics Data System (ADS)

    Goykhman, Ilya; Sassi, Ugo; Desiatov, Boris; Mazurski, Noa; Milana, Silvia; de Fazio, Domenico; Eiden, Anna; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel; Ferrari, Andrea C.

    2016-05-01

    We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves the way to graphene integrated silicon photonics.

  14. Simulation of a perfect CVD diamond Schottky diode steep forward current-voltage characteristic

    NASA Astrophysics Data System (ADS)

    Kukushkin, V. A.

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current-voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  15. Resistance of 4H-SiC Schottky barriers at high forward-current densities

    SciTech Connect

    Ivanov, P. A. Samsonova, T. P.; Il’inskaya, N. D.; Serebrennikova, O. Yu.; Kon’kov, O. I.; Potapov, A. S.

    2015-07-15

    The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified.

  16. Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme

    SciTech Connect

    Kumar, Ashish Kumar, Mukesh; Singh, R.; Kaur, Riajeet; Joshi, Amish G.; Vinayak, Seema

    2014-03-31

    Wet chemical passivation of n-GaN surface using Ru based solution has been reported. X-ray photoelectron spectroscopy characterization of the GaN surface revealed removal of surface oxides by the introduction of Ru complex species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated GaN and a remarkable improvement in Schottky barrier height from 0.76 eV to 0.92 eV was observed.

  17. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  18. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  19. Interfacial Ga-As suboxide: Structural and electronic properties

    SciTech Connect

    Colleoni, Davide Pasquarello, Alfredo

    2015-07-20

    The structural and electronic properties of Ga-As suboxide representative of the transition region at the GaAs/oxide interface are studied through density functional calculations. Two amorphous models generated by quenches from the melt are taken under consideration. The absence of As–O bonds indicates that the structure is a mixture of GaAs and Ga-oxide, in accordance with photoemission experiments. The band edges of the models are found to be closely aligned to those of GaAs. The simulation of charging and discharging processes leads to the identification of an As-related defect with an energy level at ∼0.7 eV above the GaAs valence band maximum, in good agreement with the experimental density of interface states.

  20. Crystal Growth of Device Quality Gaas in Space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.

    1985-01-01

    The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

  1. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  2. Characteristics of GaAs with inverted thermal conversion

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

  3. Ultrafast spectroscopy of GaAs under magnetic field

    SciTech Connect

    Mycek, M.A.; Siegner, U.; Glutsch, S.

    1995-03-01

    Surprising and novel results are obtained for both the linear and the nonlinear optical response of GaAs under magnetic field. Using a variety of spectroscopic techniques, we measure field dependent effects due to Coulomb correlation.

  4. GaAs solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Conway, E. J.; Walker, G. H.; Heinbockel, J. H.

    1980-01-01

    GaAs solar cells offer substantial advantages for space photovoltaic power over Si solar cells in the areas of efficiency, elevated temperature operation, and radiation damage stability. A mission cost comparison is made for GaAs and Si solar cells. For Si cell arrays, the total mission cost is found to be a minimum for a solar concentration of 2.9. For GaAs, modes of operation and construction are investigated. Modes having lower mission costs than the minimum Si mission cost are defined. These include higher concentrations, lightweight cells, and simultaneous power generation and annealing. The technological progress necessary for GaAs to operate in these modes is identified.

  5. Interfacial Ga-As suboxide: Structural and electronic properties

    NASA Astrophysics Data System (ADS)

    Colleoni, Davide; Pasquarello, Alfredo

    2015-07-01

    The structural and electronic properties of Ga-As suboxide representative of the transition region at the GaAs/oxide interface are studied through density functional calculations. Two amorphous models generated by quenches from the melt are taken under consideration. The absence of As-O bonds indicates that the structure is a mixture of GaAs and Ga-oxide, in accordance with photoemission experiments. The band edges of the models are found to be closely aligned to those of GaAs. The simulation of charging and discharging processes leads to the identification of an As-related defect with an energy level at ˜0.7 eV above the GaAs valence band maximum, in good agreement with the experimental density of interface states.

  6. Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

    NASA Astrophysics Data System (ADS)

    Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

    1997-03-01

    Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

  7. Tuning the Schottky contacts in the phosphorene and graphene heterostructure by applying strain.

    PubMed

    Liu, Biao; Wu, Li-Juan; Zhao, Yu-Qing; Wang, Lin-Zhi; Caii, Meng-Qiu

    2016-07-20

    The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure can be tuned from p-type to n-type by the in-plane compressive strains from -2% to -4%. After analyzing the total band structure and density of states of P atom orbitals, we find that the Schottky barrier height (SBH) is determined by the P-pz orbitals. What is more, the variation of the work function of the phosphorene monolayer and the graphene electrode and the Fermi level shift are the nature of the transition of Schottky barrier from n-type Schottky contact to p-type Schottky contact in the phosphorene and graphene heterostructure under different in-plane strains. We speculate that these are general results of tuning of the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure by controlling the in-plane compressive strains to obtain a promising method to design and fabricate a phosphorene-graphene based field effect transistor.

  8. GaAs Hall devices produced by local ion implantation

    NASA Astrophysics Data System (ADS)

    Pettenpaul, E.; Huber, J.; Weidlich, H.; Flossmann, W.; von Borcke, U.

    1981-08-01

    GaAs Hall devices were produced by complete planar technology using two selective silicon ion implantation steps. The fundamental characteristics of these devices with respect to reproducible implantation dose and geometry of cross-shaped elements are obtained both by experiment and calculation. The prominent properties of the GaAs Hall elements presented are high sensitivity and linearity, small temperature dependence of sensitivity and resistance, and low residual voltage.

  9. Novel GAA mutations in patients with Pompe disease.

    PubMed

    Turaça, Lauro Thiago; de Faria, Douglas Oliveira Soares; Kyosen, Sandra Obikawa; Teixeira, Valber Dias; Motta, Fabiana Louise; Pessoa, Juliana Gilbert; Rodrigues E Silva, Marina; de Almeida, Sandro Soares; D'Almeida, Vânia; Munoz Rojas, Maria Verônica; Martins, Ana Maria; Pesquero, João Bosco

    2015-04-25

    Pompe disease is an autosomal recessive disorder linked to GAA gene that leads to a multi-system intralysosomal accumulation of glycogen. Mutation identification in the GAA gene can be very important for early diagnosis, correlation between genotype-phenotype and therapeutic intervention. For this purpose, peripheral blood from 57 individuals susceptible to Pompe disease was collected and all exons of GAA gene were amplified; the sequences and the mutations were analyzed in silico to predict possible impact on the structure and function of the human protein. In this study, 46 individuals presented 33 alterations in the GAA gene sequence, among which five (c.547-67C>G, c.547-39T>G, p.R437H, p.L641V and p.L705P) have not been previously described in the literature. The alterations in the coding region included 15 missense mutations, three nonsense mutations and one deletion. One insertion and other 13 single base changes were found in the non-coding region. The mutation p.G611D was found in homozygosis in a one-year-old child, who presented low levels of GAA activity, hypotonia and hypertrophic cardiomyopathy. Two patients presented the new mutation p.L705P in association with c.-32-13T>G. They had low levels of GAA activity and developed late onset Pompe disease. In our study, we observed alterations in the GAA gene originating from Asians, African-Americans and Caucasians, highlighting the high heterogeneity of the Brazilian population. Considering that Pompe disease studies are not very common in Brazil, this study will help to better understand the potential pathogenic role of each change in the GAA gene. Furthermore, a precise and early molecular analysis improves genetic counseling besides allowing for a more efficient treatment in potential candidates.

  10. Characterisation of semi-insulating GaAs

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

    1982-01-01

    Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

  11. Comparative Studies on Temperature Dependent I-V Characteristics of Al/(p)CdTe and Ni/(n)CdS Schottky Junctions and Their PV Effect

    SciTech Connect

    Wary, G.; Kachari, T.; Rahman, A.

    2010-06-29

    Temperature dependent I-V characteristics of vacuum evaporated Al/(p)CdTe and Ni/(n)CdS Schottky junctions and their photovoltaic effects have been studied and compared. Different junction parameters such as ideality factors, barrier heights, Richardson's constant, short-circuit current density, fill factor, PV efficiency etc. were determined from their I-V characteristics. These parameters were found to change significantly on variation of temperature. The structures showed the change of PV effect. Efficiency found were 2.84% for Al/(p)CdTe and 4.44% for Ni hydro/(n)CdS. Polycrystalline nature, and continuous and ordered structure with bigger grain sizes of the CdS film shows more PV conversion efficiency in making Ni/(n)CdS junction as compare to Al/(p)CdTe junction. However these values were found to vary with doping concentration, and in hydrogen treated samples in both cases.

  12. Temperature dependence of Schottky diode characteristics prepared with photolithography technique

    NASA Astrophysics Data System (ADS)

    Korucu, Demet; Turut, Abdulmecit

    2014-11-01

    A Richardson constant (RC) of 8.92 Acm-2K-2 from the conventional Richardson plot has been obtained because the current-voltage data of the device quite well obey the thermionic emission (TE) model in 190-320 K range. The experimental nT versus T plot of the device has given a value of T0 = 7.40 K in temperature range of 160-320 K. The deviations from the TE current mechanism at temperatures below 190 K have been ascribed to the patches introduced by lateral inhomogeneity of the barrier heights. Therefore, an experimental RC value of 7.49 A(cmK)-2 has been obtained by considering Tung's patch model in the temperature range of 80-190 K. This value is in very close agreement with the known value of 8.16 Acm-2K-2 for n-type GaAs.

  13. Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts

    NASA Astrophysics Data System (ADS)

    Han, Lin-Chao; Shen, Hua-Jun; Liu, Ke-An; Wang, Yi-Yu; Tang, Yi-Dan; Bai, Yun; Xu, Heng-Yu; Wu, Yu-Dong; Liu, Xin-Yu

    2014-12-01

    Tung's model was used to analyze anomalies observed in Ti/SiC Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the ‘T0 anomaly’ and the difference (△Φ) between the uniformly high barrier height (ΦB0) and the effective barrier height (ΦBeff). Those two parameters of Ti Schottky contacts on 4H—SiC were deduced from I-V measurements in the temperature range of 298 K-503 K. The increase in Schottky barrier (SB) height (ΦB) and decrease in the ideality factor (n) with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-°C thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.

  14. An analytical study of current-voltage characteristics and breakdown performance of GaInP /GaAs composite collector double heterojunction bipolar transistor

    NASA Astrophysics Data System (ADS)

    Goh, Y. L.; Ong, D. S.; Yow, H. K.

    2004-10-01

    An analytical model taking into account the nonlocal dead-space effects is developed to study the dc characteristics and avalanche multiplication of GaInP /GaAs double heterojunction bipolar transistor (DHBT) incorporating composite collector designs. The dependence of the turn-on characteristics and the multiplication onset of the HBT on the device composite layer thickness and doping densities are investigated. In this paper, optimum combinations of composite parameters are presented to obtain zero spike effect in the base-collector heterojunction conduction band and to improve output breakdown voltages. The model is then applied to the GaInP /GaAs DHBT with AlGaAs in the composite collector, which is found to have good I-V characteristics and high operating voltage range before the onset of avalanche multiplication.

  15. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes.

    PubMed

    Lee, Seula; Lee, Jinseon; Kang, Tai-Young; Kyoung, Sinsu; Jung, Eun Sik; Kim, Kyung Hwan

    2015-11-01

    In this paper, we present the preparation and characterization of Schottky barrier diodes based on silicon carbide with various Schottky metal layer thickness values. In this structure, molybdenum and aluminum were employed as the Schottky barrier metal and top electrode, respectively. Schottky metal layers were deposited with thicknesses ranging from 1000 to 3000 Å, and top electrodes were deposited with thickness as much as 3000 Å. The deposition of both metal layers was performed using the facing target sputtering (FTS) method, and the fabricated samples were annealed with the tubular furnace at 300 degrees C under argon ambient for 10 min. The Schottky barrier height, series resistance, and ideality factor was calculated from the forward I-V characteristic curve using the methods proposed by Cheung and Cheung, and by Norde. For as-deposited Schottky diodes, we observed an increase of the threshold voltage (V(T)) as the thickness of the Schottky metal layer increased. After the annealing, the Schottky barrier heights (SBHs) of the diodes, including Schottky metal layers of over 2000 Å, increased. In the case of the Schottky metal layer deposited to 1000 Å, the barrier heights decreased due to the annealing process. This may have been caused by the interfacial penetration phenomenon through the Schottky metal layer. For variations of V(T), the SBH changed with a similar tendency. The ideality factor and series resistance showed no significant changes before or after annealing. This indicates that this annealing condition is appropriate for Mo SiC structures. Our results confirm that it is possible to control V(T) by adjusting the thickness of the Schottky metal layer.

  16. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes.

    PubMed

    Lee, Seula; Lee, Jinseon; Kang, Tai-Young; Kyoung, Sinsu; Jung, Eun Sik; Kim, Kyung Hwan

    2015-11-01

    In this paper, we present the preparation and characterization of Schottky barrier diodes based on silicon carbide with various Schottky metal layer thickness values. In this structure, molybdenum and aluminum were employed as the Schottky barrier metal and top electrode, respectively. Schottky metal layers were deposited with thicknesses ranging from 1000 to 3000 Å, and top electrodes were deposited with thickness as much as 3000 Å. The deposition of both metal layers was performed using the facing target sputtering (FTS) method, and the fabricated samples were annealed with the tubular furnace at 300 degrees C under argon ambient for 10 min. The Schottky barrier height, series resistance, and ideality factor was calculated from the forward I-V characteristic curve using the methods proposed by Cheung and Cheung, and by Norde. For as-deposited Schottky diodes, we observed an increase of the threshold voltage (V(T)) as the thickness of the Schottky metal layer increased. After the annealing, the Schottky barrier heights (SBHs) of the diodes, including Schottky metal layers of over 2000 Å, increased. In the case of the Schottky metal layer deposited to 1000 Å, the barrier heights decreased due to the annealing process. This may have been caused by the interfacial penetration phenomenon through the Schottky metal layer. For variations of V(T), the SBH changed with a similar tendency. The ideality factor and series resistance showed no significant changes before or after annealing. This indicates that this annealing condition is appropriate for Mo SiC structures. Our results confirm that it is possible to control V(T) by adjusting the thickness of the Schottky metal layer. PMID:26726688

  17. Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

    NASA Astrophysics Data System (ADS)

    Xiao-Wen, Xi; Chang-Chun, Chai; Gang, Zhao; Yin-Tang, Yang; Xin-Hai, Yu; Yang, Liu

    2016-04-01

    The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

  18. Surface Al doping of 4H-SiC via low temperature annealing

    NASA Astrophysics Data System (ADS)

    Park, Junbo; Kim, Ki-hwan; Park, Young-rak; Kim, Minki; Lee, Hyungseok; Jun, Chi-Hoon; Koo, Sangmo; Ko, Sang Choon

    2016-07-01

    We present a method of forming shallow p-doping on a 4H-SiC surface by depositing a thin Al layer (d = 5 nm) and then thermally annealing it at 1000 °C for 10 min. A secondary ion mass spectrometry analysis of the annealed Al/SiC sample reveals an Al concentration in excess of 1017 cm-3 up to a depth of d ≤ 250 nm. I-V measurements and CV characterizations of Ti-SiC Schottky barrier diodes (SBDs) fabricated on a n-type SiC epi-wafer indicate that the shallow Al doping increases the built-in potential of the junction and the barrier height by Δ V b i = 0.51 eV and Δ ϕ B = 0.26 eV , respectively. Assuming a rectangular doping profile, calculations of the built-in voltage shift and the Schottky barrier height indicate that partial dopant activation (activation ratio ˜2%) can induce the observed barrier height shift. The shallow doping method was then used to fabricate junction terminations in SBDs which increased the breakdown voltage and reduced the reverse leakage current. Technology CAD simulations of the SBD with and without doping verify that a reduction of peak electric field can explain the improvement of the breakdown voltage.

  19. Schottky Diode Applications of the Fast Green FCF Organic Material and the Analyze of Solar Cell Characteristics

    NASA Astrophysics Data System (ADS)

    Çaldiran, Z.; Aydoğan, Ş.; İncekara, Ü.

    2016-05-01

    In this study, a device applications of organic material Fast Green FCF (C37H34N2Na2O10S3Na2) has been investigated. After chemical cleaning process of boron doped H-Si crystals, Al metal was coated on the one surface of crystals by thermal evaporation and fast green organic materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Finally, Ni metal was coated on Fast Green by sputtering and we obtained the Ni/Fast Green FCF/n-Si/Al Schottky type diode. And then we calculated the basic diode parameters of device with current-voltage (I-V) and capacitance- voltage (C-V) measurements at the room temperature. We calculated the ideality factory (n), barrier height (Φb) of rectifing contact from I-V measurements using thermionic emission methods. Furthermore, we calculated ideality factory (n), barrier height (Φb) and series resistance (Rs) of device using Cheung and Norde functions too. The diffusion potential, barrier height, Fermi energy level and donor concentration have been determined from the linear 1/C2-V curves at reverse bias, at room temperature and various frequencies. Besides we measured the current-voltage (I-V) at under light and analyzed the characteristics of the solar cell device.

  20. Theory of Giant Rectification in Molecular Schottky Diodes

    NASA Astrophysics Data System (ADS)

    Darancet, Pierre

    Following early theoretical models, efforts towards the synthesis and characterization of more efficient molecular diodes have consisted into attempts to increase the electron rich/poor characters of the donor/acceptor moieties, decrease their conjugation, and imbalance their coupling to the electrodes. The experimental poor performance of single-molecule diodes - with the notable exception of environment-induced diodes - suggests that these physical parameters tend to be mutually exclusive in most molecular systems. In this talk, inspired by recent observations of large rectification ratios at organic bilayers, we will show how molecules with a moiety strongly coupled to a metal electrode can, in principle, be used to optimize these different aspects simultaneously. Using first-principles calculations, we will show that this class of molecular systems -analog to macroscopic Schottky diodes, can display large rectification ratios at low operating voltages The submitted manuscript has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (Argonne). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357.

  1. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures

    PubMed Central

    2015-01-01

    In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor–liquid–solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I–V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm2. Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ⟨111⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device. PMID:26052733

  2. Cooling of radioactive isotopes for Schottky mass spectrometry

    SciTech Connect

    Steck, M.; Beckert, K.; Eickhoff, H.; Franzke, B.; Nolden, F.; Reich, H.; Schlitt, B.; Winkler, T.

    1999-01-15

    Nuclear masses of radioactive isotopes can be determined by measurement of their revolution frequency relative to the revolution frequency of reference ions with well-known masses. The resolution of neighboring frequency lines and the accuracy of the mass measurement is dependent on the achievable minimum longitudinal momentum spread of the ion beam. Electron cooling allows an increase of the phase space density by several orders of magnitude. For high intensity beams Coulomb scattering in the dense ion beam limits the beam quality. For low intensity beams a regime exists in which the diffusion due to intrabeam scattering is not dominating any more. The minimum momentum spread {delta}p/p=5x10{sup -7} which is observed by Schottky noise analysis is considerably higher than the value expected from the longitudinal electron temperature. The measured frequency spread results from fluctuations of the magnetic field in the storage ring magnets. Systematic mass measurements have started and can be presently used for ions with half-lives of some ten seconds. For shorter-lived nuclei a stochastic precooling system is in preparation.

  3. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier.

    PubMed

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K; Venkatesan, T; Ang, Kah-Wee

    2015-01-01

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec). PMID:26667402

  4. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

    PubMed Central

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K.; Venkatesan, T.; Ang, Kah-Wee

    2015-01-01

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec). PMID:26667402

  5. Thermionic field emission in gold nitride Schottky nanodiodes

    NASA Astrophysics Data System (ADS)

    Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

    2012-11-01

    We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

  6. Additional electric field in real trench MOS barrier Schottky diode

    NASA Astrophysics Data System (ADS)

    Mamedov, R. K.; Aslanova, A. R.

    2016-04-01

    In real trench MOS barrier Schottky diode (TMBS diode) additional electric field (AEF) the whole is formed in the near contact region of the semiconductor and its propagation space is limited with the barrier metal and the metallic electrodes of MOS structures. Effective potential barrier height TMBS diode is formed via resulting electric field of superposition AEF and electric field of space charge region (SCR) semiconductor. The dependence of the resulting electric field intensity of the distance towards the inside the semiconductor is nonlinear and characterized by a peak at a certain distance from the interface. The thickness of the SCR in TMBS diode becomes equal to the trench depth. Force and energy parameters of the AEF, and thus resulting electric field in the SCR region, become dependent on the geometric design parameters TMBS diode. The forward I-V characteristic TMBS diode is described by the thermionic emission theory as in conventional flat Scottky diode, and in the reverse bias, current is virtually absent at initial voltage, appears abruptly at a certain critical voltage.

  7. Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

    NASA Astrophysics Data System (ADS)

    Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

    2013-01-01

    Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

  8. Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

    PubMed

    Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

    2013-01-01

    Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption. PMID:23363692

  9. Spectroscopy of GaAs quantum wells

    SciTech Connect

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

  10. Quantitative determination of local potential values in inhomogeneously doped semiconductors by scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Weidlich, P. H.; Dunin-Borkowski, R. E.; Ebert, Ph.

    2011-08-01

    Local potential changes arising from nanoscale three-dimensional spatial fluctuations in the dopant distribution in Zn-doped GaAs were investigated quantitatively by scanning tunneling microscopy and spectroscopy at (110) cleavage surfaces. Tunneling spectra measured in areas with different local doping concentration show apparent shifts of the valence band edge and apparent changes of the band gap. A quantitative analysis, combined with band bending and tunnel current simulations, demonstrates that these effects arise from tip-induced band bending that modulates the real potential changes. It is illustrated how exact potential changes between locally high and low doped areas can be determined. It is found that the local potential fluctuations in three-dimensionally doped semiconductors are approximately one order of magnitude smaller that those observed in two-dimensionally doped semiconductors.

  11. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Sellers, D. G.; Chen, E. Y.; Polly, S. J.; Hubbard, S. M.; Doty, M. F.

    2016-05-01

    We investigate the effect of doping on the mechanisms of carrier escape from intermediate states in delta-doped InAs/GaAs intermediate band solar cells. The intermediate states arise from InAs quantum dots embedded in a GaAs p-i-n junction cell. We find that doping the sample increases the number of excited-state carriers participating in a cycle of trapping and carrier escape via thermal, optical, and tunneling mechanisms. However, we find that the efficiency of the optically-driven carrier escape mechanism is independent of doping and remains small.

  12. Fabrication and characterization of micropower high-frequency Schottky junction transistor

    NASA Astrophysics Data System (ADS)

    Wu, Zhiyuan

    With the scaling down of the field effect transistor (FET), power consumption becomes a more and more important factor in advanced integrated circuit (IC) applications. Micropower circuits based on sub-threshold complementary metal-oxide-silicon (CMOS) devices encounter scaling and performance limitations when the gate length is reduced below 1 mum due to poor transistor matching. A new micropower device, the Schottky Junction Transistor (SJT), has been studied in this work. The SJT resembles an enhancement mode, metal semiconductor field effect transistor (MESFET) fabricated on a silicon-on-insulator (SOI) substrate. In the SJT, the channel doping and thickness are chosen to make the device operate in the sub-threshold region. Hence, the drain and gate currents both vary exponentially with the gate voltage Vgs. Using a small gate current to control a larger drain current allows the SJT to operate as a current-controlled current source. Several SJTs with gate length of 2 and 0.5 mum have been fabricated and characterized. For a 2 mum gate length SJT, numerical simulations fit well with the measured data. The cut-off frequency of the 2 mum SJT extracted from s-parameters simulation is 140 MHz, which is close to the value calculated from d.c. measurements (126 MHz). This cut-off frequency compares very favorably to the maximum possible value of 20 MHz expected for a metal oxide silicon field effect transistor (MOSFET) of the same gate length. The higher frequency performance compared to sub-threshold CMOS is the result of the reduced gate capacitance and larger channel mobility. The d.c. characteristics of the fabricated 0.5 mum SJT are not as ideal as that of the 2 mum SJT. This is primarily due to the large effective channel thickness of the 0.5 mum SJT (1300 A) as confirmed by numerical simulations. The cut-off frequencies of the 0.5 mum SJT extracted from s-parameters simulation, show larger values (>1 GHz) compared to those of the 2 mum SJT. However, a trade

  13. Nondestructive tribochemistry-assisted nanofabrication on GaAs surface

    PubMed Central

    Song, Chenfei; Li, Xiaoying; Dong, Hanshan; Yu, Bingjun; Wang, Zhiming; Qian, Linmao

    2015-01-01

    A tribochemistry-assisted method has been developed for nondestructive surface nanofabrication on GaAs. Without any applied electric field and post etching, hollow nanostructures can be directly fabricated on GaAs surfaces by sliding a SiO2 microsphere under an ultralow contact pressure in humid air. TEM observation on the cross-section of the fabricated area shows that there is no appreciable plastic deformation under a 4 nm groove, confirming that GaAs can be removed without destruction. Further analysis suggests that the fabrication relies on the tribochemistry with the participation of vapor in humid air. It is proposed that the formation and breakage of GaAs-O-Si bonding bridges are responsible for the removal of GaAs material during the sliding process. As a nondestructive and conductivity-independent method, it will open up new opportunities to fabricate defect-free and well-ordered nucleation positions for quantum dots on GaAs surfaces. PMID:25761910

  14. Research on the electrical characteristics of the Pt/CdS Schottky diode

    NASA Astrophysics Data System (ADS)

    Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

    2013-08-01

    With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

  15. Schottky Diodes Based on Polyaniline/Multi-Walled Carbon Nanotube Composites

    NASA Astrophysics Data System (ADS)

    Hajibadali, A.; Nejad, M. Baghaei; Farzi, G.

    2015-08-01

    Polyaniline/multi-walled carbon nanotube composites (PANI/MWCNT), with various concentration of multi-walled carbon nanotube, were synthesized. Several Schottky diodes were fabricated, where PANI or PANI/MWCNT composites, aluminum, and gold were used as semiconductor, Schottky contact, and ohmic contact, respectively. Then current-voltage characteristics of the fabricated diodes were measured at room temperature and within the bias range of -5 to +5 V. The measurements were repeated three times for each sample to verify repeatability of experiment. The obtained results show that by increasing the MWCNT concentration, the current intensity increases. Furthermore, I-V characteristics of pure polyaniline Schottky diode follows the thermionic emission mechanism while the I-V characteristics of Schottky diodes based on PANI/MWCNT composites show two distinct power law regions. At lower voltages, the mechanism follows Ohm's Law, whereas at higher voltages, the mechanism is compatible with space charge limited conduction emission mechanism. The parameters of Schottky diodes were determined, and it was observed that critical voltage decreased when the concentration of MWCNT in the composite increased.

  16. Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector

    NASA Astrophysics Data System (ADS)

    Kumar, M.; Jeong, H.; Polat, K.; Okyay, A. K.; Lee, D.

    2016-07-01

    We report on the fabrication and characterization of a Schottky ultraviolet graphene/AlGaN/GaN photodetector (PD). The fabricated device clearly exhibits rectification behaviour, indicating that the Schottky barrier is formed between the AlGaN and the mechanically transferred graphene. The Schottky parameters are evaluated using an equivalent circuit with two diodes connected back-to-back in series. The PD shows a low dark current of 4.77  ×  10-12 A at a bias voltage of  -2.5 V. The room temperature current-voltage (I-V) measurements of the graphene/AlGaN/GaN Schottky PD exhibit a large photo-to-dark contrast ratio of more than four orders of magnitude. Furthermore, the device shows peak responsivity at a wavelength of 350 nm, corresponding to GaN band edge and a small hump at 300 nm associated to the AlGaN band edge. In addition, we examine the behaviour of Schottky PDs with responsivities of 0.56 and 0.079 A W-1 at 300 and 350 nm, respectively, at room temperature.

  17. Gene doping.

    PubMed

    Harridge, Stephen D R; Velloso, Cristiana P

    2008-01-01

    Gene doping is the misuse of gene therapy to enhance athletic performance. It has recently been recognised as a potential threat and subsequently been prohibited by the World Anti-Doping Agency. Despite concerns with safety and efficacy of gene therapy, the technology is progressing steadily. Many of the genes/proteins which are involved in determining key components of athletic performance have been identified. Naturally occurring mutations in humans as well as gene-transfer experiments in adult animals have shown that altered expression of these genes does indeed affect physical performance. For athletes, however, the gains in performance must be weighed against the health risks associated with the gene-transfer process, whereas the detection of such practices will provide new challenges for the anti-doping authorities.

  18. THz frequency multiplier chains base on planar Schottky diodes

    NASA Technical Reports Server (NTRS)

    Maiwald, F.; Schlecht, E.; Maestrini, A.; Chattopadhyay, G.; Pearson, J.; Pukala, D.; Mehdi, I.

    2002-01-01

    The Herschel Space Observatory (HSO), an ESA cornerstone mission with NASA contribution, will enable a comprehensive study of the galactic as well as the extra galactic universe. At the heart of this exploration are ultra sensitive coherent detectors that can allow for high-resolution spectroscopy. Successful operation of these receivers is predicated on providing a sufficiently powerful local oscillator (LO) source. Historically, a versatile space qualified LO source for frequencies beyond 500 GHz has been difficult if not impossible. This paper will focus on the effort under way to develop, build, characterize and qualify a LO chain to 1200 GHz (Band 5 on HSO) that is based on planar GaAs diodes mounted in waveguide circuits. State-of-the-art performance has been obtained from a three-stage ( x2 x 2 x 3 ) multiplier chain that can provide a peak output power of 120 uW (1178 GHz) at room temperature and a peak output power of 190 uW at 1183 GHz when cooled to 113 K. Implementation of this LO source for the Heterodyne Instrument for Far Infrared (HIFI) on HSO will be discussed in detail.

  19. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOEpatents

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  20. Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers and the δ-doping

    NASA Astrophysics Data System (ADS)

    Zhang, Lan-Lan; Lu, Mao-Wang; Yang, Shi-Peng; Tang, Qiang

    2016-10-01

    We theoretically investigate the modulation of the δ-doping to a semiconductor-based giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic (FM) stripes on top and bottom of a GaAs /AlxGa1-xAs heterostructure. It is shown that a considerable GMR effect still exists in this device with the δ-doping. It is also shown that the magnetoresistance ratio (MR) depends on not only the weight but also the position of the δ-doping. These interesting results will be useful in understanding and designing structurally-controllable GMR devices for magnetic information storage.

  1. Characterization of production GaAs solar cells for space

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1988-01-01

    The electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Proton energies used varied between 50 keV and 10 MeV, and damage coefficients were derived for liquid phase epitaxy GaAs solar cells. Electron energies varied between 0.7 and 2.4 MeV. Cells from recent production runs were characterized as a function of electron and proton irradiation. These same cells were also characterized as a function of solar intensity and operating temperature, both before and after the electron irradiations. The long term stability of GaAs cells during photon exposure was examined. Some cells were found to degrade with photon exposure and some did not. Calibration standards were made for GaAs/Ge solar cells by flight on a high altitude balloon.

  2. Atomic hydrogen cleaning of GaAS Photocathodes

    SciTech Connect

    M. Poelker; J. Price; C. Sinclair

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs.

  3. Humidity effects on tribochemical removal of GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Yu, Bingjun; Gao, Jian; Jin, Chenning; Xiao, Chen; Wu, Jiang; Liu, Huiyun; Jiang, Shulan; Chen, Lei; Qian, Linmao

    2016-06-01

    Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO2 tip. The removal depth increases with increasing relative humidity (1-90%), and reaches its maximum value in water. A perfect crystal matrix without defects was observed in the cross section of the scratched groove using a transmission electron microscope. A model based on reactive tip scratching-induced oxidation, water solubility of debris, and adhesion effect was proposed to interpret tribochemical removal of GaAs surface. This study provides new insights into defect-free and site-controlled nanofabrication of GaAs.

  4. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  5. GaAs detectors irradiated by low doses of electrons

    NASA Astrophysics Data System (ADS)

    Šagátová, A.; Zat'ko, B.; Pavlovič, M.; Sedlačková, K.; Hybler, P.; Dubecký, F.; Nečas, V.

    2014-04-01

    Semi-insulating (SI) GaAs detectors were irradiated by 5 MeV electrons up to a dose of 69 kGy, in order to test their radiation hardness. The electric and spectrometric stability of detectors was examined as a function of the absorbed dose. Investigated detectors showed a very good detector radiation resistance within a dose up to 40 kGy followed by deterioration of some spectrometric and electric properties. However, the reverse current and the detector charge collection efficiency showed minimum changes with the overall applied doses. The obtained results will be used as a preliminary study for further radiation-hardness investigations of GaAs detectors against high energy electrons. This will complete our previous studies of GaAs detector radiation hardness against fast neutrons and γ-rays.

  6. A GaAs phononic crystal with shallow noncylindrical holes.

    PubMed

    Petrus, Joseph A; Mathew, Reuble; Stotz, James A H

    2014-02-01

    A square lattice of shallow, noncylindrical holes in GaAs is shown to act as a phononic crystal (PnC) reflector. The holes are produced by wet-etching a GaAs substrate using a citric acid:H2O2 etching procedure and a photolithographed array pattern. Although nonuniform and asymmetric etch rates limit the depth and shape of the phononic crystal holes, the matrix acts as a PnC, as demonstrated by insertion loss measurements together with interferometric imaging of surface acoustic waves propagating on the GaAs surface. The measured vertical displacement induced by surface phonons compares favorably with finite-difference time-domain simulations of a PnC with rounded-square holes.

  7. Growth of silver nanowires on GaAs wafers.

    PubMed

    Sun, Yugang

    2011-05-01

    Silver (Ag) nanowires with chemically clean surfaces have been directly grown on semi-insulating gallium arsenide (GaAs) wafers through a simple solution/solid interfacial reaction (SSIR) between the GaAs wafers themselves and aqueous solutions of silver nitrate (AgNO(3)) at room temperature. The success in synthesis of Ag nanowires mainly benefits from the low concentration of surface electrons in the semi-insulating GaAs wafers that can lead to the formation of a low-density of nuclei that facilitate their anisotropic growth into nanowires. The resulting Ag nanowires exhibit rough surfaces and reasonably good electric conductivity. These characteristics are beneficial to sensing applications based on single-nanowire surface-enhanced Raman scattering (SERS) and possible surface-adsorption-induced conductivity variation.

  8. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Zwerdling, S.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

  9. Oxygen in GaAs - Direct and indirect effects

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

    1984-01-01

    Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

  10. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  11. On-Chip Power-Combining for High-Power Schottky Diode Based Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Siles Perez, Jose Vicente (Inventor); Chattopadhyay, Goutam (Inventor); Lee, Choonsup (Inventor); Schlecht, Erich T. (Inventor); Jung-Kubiak, Cecile D. (Inventor); Mehdi, Imran (Inventor)

    2015-01-01

    A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.

  12. The interface structure of high performance ZnO Schottky diodes

    NASA Astrophysics Data System (ADS)

    Mayes, Edwin L. H.; Partridge, James G.; Field, Matthew R.; McCulloch, Dougal G.; Durbin, Steven M.; Kim, Hyung-Suk; Allen, Martin W.

    2012-08-01

    Oxidized iridium (IrOx) anodes fabricated on n-type ZnO single crystal wafers using reactive pulsed laser deposition are known to produce high quality Schottky barriers with ideality factors approaching the image-force-controlled limit for laterally homogeneous interfaces. These high performance IrOx/ZnO Schottky contacts were cross-sectioned and analyzed using transmission electron microscopy, revealing an amorphous interfacial layer of 2-3 nm thickness. Electron energy loss spectroscopy, used to study the composition of the interface region, showed evidence of significant zinc diffusion across the interface into the IrOx film, which leads to the creation of Zn vacancies (acceptors), in the ZnO sub-interface region. There is also evidence for oxygen passivation near the interface resulting from the use of an active oxygen ambient during the IrOx deposition. Both these factors may explain the outstanding electrical performance of these Schottky devices.

  13. Effect of ultrasonic loading on current in Mo/n-n{sup +}-Si with Schottky barriers

    SciTech Connect

    Olikh, O. Ya.

    2013-07-15

    The results obtained in experimental studies of the operation of silicon Schottky diodes subjected to ultrasonic loading (oscillations frequency of 9.6 MHz; intensity of longitudinal waves as high as 0.7 W/cm{sup 2}) are reported. A reversible acoustically induced decrease in the Schottky barrier height (to 0.13 V) and an increase in the saturation and reverse current (by as much as 60%) are observed. It is shown that ultrasound does not affect the ideality factor of the diodes and the tunneling component of the reverse current. The process of electron transport is considered within the context of the model of an inhomogeneous Schottky barrier; it is shown that the observed effects can be related to the acoustically induced ionization of defects, which are located at the metal-semiconductor interface.

  14. Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

    SciTech Connect

    Roul, Basanta; Kumar, Mahesh; Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B.; Sinha, Neeraj; Kalghatgi, A. T.

    2011-02-15

    InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively.

  15. Voltage tunable multiple quantum well distributed feedback filter with an electron beam written Schottky grating

    NASA Astrophysics Data System (ADS)

    Zia, O.; Bhattacharya, P. K.; Singh, J.; Brock, T.

    1994-08-01

    A novel optoelectronic filter voltage-tunable characteristics has been developed and implemented in a multiquantum well waveguide device. By virtue of the quantum-confined Stark effect, the refractive index in quantum wells at the periphery of a guiding region can be given a periodicity in the guiding direction by application of a bias on an electron-beam patterned Schottky grating atop the guide. If the period of the Schottky grating and associated index profile satisfies the Bragg condition, as in a resonant distributed feedback structure, band-reject filtering results. Aftering the bias on the Schottky grating changes the refractive index in the wells, thereby providing tunability of the wavelength at which Bragg diffraction occurs.

  16. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    NASA Astrophysics Data System (ADS)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  17. Photoheat-induced Schottky nanojunction and indirect Mott transition in VO2: photocurrent analysis

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Tak; Kim, Minjung; Sohn, Ahrum; Slusar, Tetiana; Seo, Giwan; Cheong, Hyeonsik; Kim, Dong-Wook

    2016-03-01

    In order to elucidate a mechanism of the insulator-to-metal transition (IMT) for a Mott insulator VO2 (3d 1), we present Schottky nanojunctions and the structural phase transition (SPT) by simultaneous nanolevel measurements of photocurrent and Raman scattering in microlevel devices. The Schottky nanojunction with the monoclinic metallic phase between the monoclinic insulating phases is formed by the photoheat-induced IMT not accompanied with the SPT. The temperature dependence of the Schottky junction reveals that the Mott insulator has an electronic structure of an indirect subband between the main Hubbard d bands. The IMT as reverse process of the Mott transition occurs by temperature-induced excitation of bound charges in the indirect semiconductor band, most likely formed by impurities such as oxygen deficiency. The metal band (3d 1) for the Mott insulator is screened (trapped) by the indirect band (impurities).

  18. A high-frequency Schottky detector for use in the Tevatron

    SciTech Connect

    Goldberg, D.A.; Lambertson, G.R.

    1990-09-01

    A vexing problem associated with detection of Schottky signals from a bunched beam is the presence of the coherent signal, which can be 10 or more orders of magnitude greater than the Schottky signal. To overcome this difficulty, we have constructed a Schottky detector for the Tevatron collider in the form of a high-Q ({approx}5000) resonant cavity which operates at roughly 2 GHz, well above the frequency at which the single-bunch frequency spectrum begins to roll off ({approx}200--300 MHz for the Tevatron). The detector is capable of sensing independently the vertical and horizontal particle motions. The 2 GHz Schottky signals are down-converted to frequencies below 100 kHz to permit relatively rapid high-resolution analysis using a FFT spectrum analyzer. The initial installation consists of a single cavity; a second detector will be built which employs a pair of phased cavities to permit discrimination between p's and {bar p}'s. Details of the design of both the cavity and the associated electronics are presented. Spectra obtained from the detector show clearly observable Schottky betatron lines, free of coherent contaminants; also seen are the common-mode'' longitudinal signals due to the offset of the beam from the detector center. The latter signals indicate that at 2 GHz, the coherent single-bunch spectrum from the detector is reduced by >80 dB; therefore, in normal collider operation, the Schottky betatron lines are essentially entirely free of coherent contaminants. Experimental data will be presented showing how the detector spectra can be used to measure such properties as transverse emittance and synchrotron frequency. 3 refs., 4 figs., 5 tabs.

  19. A high-frequency Schottky detector for use in the Tevatron

    SciTech Connect

    Goldberg, D.A.; Lambertson, G.R. )

    1991-06-01

    A vexing problem associated with detection of Schottky signals from a bunched beam is the presence of the coherent signal, which can be 10 or more orders of magnitude greater than the Schottky signal. To overcome this difficulty, we have constructed a Schottky detector for the Tevatron collider in the form of a high-Q({approx}5000) resonant cavity which operates at roughly 2 GHz, well above the frequency at which the single-bunch frequency spectrum begins to roll off ({approx}200--300 MHz for the Tevatron). The detector is capable of sensing independently the vertical and horizontal particle motions. The 2 GHz Schottky signals are down-converted to frequencies below 100 kHz to permit relatively rapid high-resolution analysis using a FFT spectrum analyzer. The initial installation consists of a single cavity; a second detector will be built which employs a pair of phased cavities to permit discrimination between p's and {bar p}'s. Details of the design of both the cavity and the associated electronics are presented. Spectra obtained from the detector show clearly observable Schottky betatron lines, free of coherent contaminants; also seen are the common-mode'' longitudinal signals due to the offset of the beam from the detector center. The latter signals indicate that at 2 GHz, the coherent single-bunch spectrum from the detector is reduced by {gt}80 dB; therefore, in normal collider operation, the Schottky betatron lines are essentially entirely free of coherent contaminants. Experimental data will be presented showing how the detector spectra can be used to measure such properties as transverse emittance and synchrotron frequency.

  20. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    DOE PAGES

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d,more » electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.« less