Diffusional creep of fine-grained olivine aggregates: Chemical and melt effects

NASA Astrophysics Data System (ADS)

Yabe, K.; Hiraga, T.

2017-12-01

Since olivine is the major constituent mineral of the earth's upper mantle, flow properties of the upper mantle are often estimated based on flow laws of olivine aggregate which are determined by high-temperature creep experiments. Recently, Miyazaki et al. (2013) showed that crystallographic preferred orientation (CPO) which has been interpreted as the main cause for seismic wave anisotropy in mantle asthenosphere could be formed in diffusional creep regime. The detail of diffusional creep of olivine aggregates is not clear yet. The strength of olivine aggregates synthesized using sol-gel method (Faul and Jackson 2007) was more than one order of magnitude harder in viscosity than those synthesized from natural mantle rocks (Hirth and Kohlstedt 1995, Hansen et al. 2011) even at the same experimental conditions. This discrepancy can be interpreted by a presence of melt and/or impurity. The purpose of this study is to examine the effects of chemical composition and presence of the melt phase on the creep properties of olivine aggregates. At first, Fe-bearing olivine aggregates were prepared by vacuum sintering of nano-sized olivine powder synthesized from highly pure and fine-grained (<100 nm) source powders. Samples with and without dopants of Al2O3 and CaO were prepared. Then uniaxial compression tests at 1 atm were conducted. Deformation experiments showed that all the samples were deformed by diffusional creep mechanism. Both doped and non-doped samples exhibited sample strength at low temperature (=1150˚C), while the doped sample became significantly weaker with showing higher temperature sensitivity compared to non-doped samples at higher temperature. The temperature sensitivity of doped samples didn't change below and above solidus, which indicate the weakening due to chemical effect, not by the melting. Non-doped samples exhibits essentially the same strength as olivine aggregates synthesized from sol-gel method (Faul and Jackson 2007), while doped sample is still harder than olivine aggregates synthesized from naturally derived olivine crystals. Trace elements other than Ca and Al, which segregate at grain boundaries in naturally-derived olivine aggregates, is likely to induce further weakening of olivine aggregates.

Theoretical study of the characteristics of a continuous wave iron-doped ZnSe laser

NASA Astrophysics Data System (ADS)

Pan, Qikun; Chen, Fei; Xie, Jijiang; Wang, Chunrui; He, Yang; Yu, Deyang; Zhang, Kuo

2018-03-01

A theoretical model describing the dynamic process of a continuous-wave Fe2+:ZnSe laser is presented. The influence of some of the operating parameters on the output characteristics of an Fe2+:ZnSe laser is studied in detail. The results indicate that the temperature rise of the Fe2+:ZnSe crystal is significant with the use of a high power pump laser, especially for a high doped concentration of crystal. The optimal crystal length increases with decreasing the doped concentration of crystal, so an Fe2+:ZnSe crystal with simultaneous doping during growth is an attractive choice, which usually has a low doped concentration and long length. The laser pumping threshold is almost stable at low temperatures, but increases exponentially with a working temperature in the range of 180 K to room temperature. The main reason for this phenomenon is the short upper level lifetime and serious thermal temperature rise when the working temperature is higher than 180 K. The calculated optimum output mirror transmittance is about 35% and the performance of a continuous-wave Fe2+:ZnSe laser is more efficient at a lower operating temperature.

Electronic excitations in electron-doped cuprate superconductors

NASA Astrophysics Data System (ADS)

Unger, P.; Fulde, P.

1995-04-01

We calculate the electronic single-particle spectrum of an electron-doped cuprate superconductor such as Nd2-xCexCuO4-y. The dynamics of holes in the Cu-O planes is described by the extended Hubbard or Emery model. We consider the system at half-filling (one hole per unit cell, nh=1) and in the case of electron doping where the ground state is paramagnetic. The projection technique of Mori and Zwanzig is applied to derive the equations of motion for the Green's functions of Cu and O holes. These equations are solved self-consistently as in a previous calculation, where we considered the case of hole doping. At half-filling the system exhibits a charge-transfer gap bounded by Zhang-Rice singlet states and the upper Hubbard band. Upon electron doping the upper Hubbard band crosses the Fermi level and the system becomes metallic. With increasing electron doping the singlet band loses intensity and finally vanishes for nh=0. The corresponding spectral weight is transferred to the upper Hubbard band, which becomes a usual tight-binding band for zero hole concentration. The shape of the flat band crossing the Fermi level fits well to angle-resolved photoemission spectra of Nd2-xCexCuO4-y for x=0.15 and 0.22. Furthermore, our findings are in excellent agreement with exact diagonalization studies of 2×2 CuO2 cluster with periodic boundary conditions.

Selective epitaxy using the gild process

DOEpatents

Weiner, Kurt H.

1992-01-01

The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

Effects of magnetic impurities on upper critical fields in the high-T c superconductor La-doped CaFe2As2

NASA Astrophysics Data System (ADS)

Jung, Soon-Gil; Shin, Soohyeon; Jang, Harim; Mikheenko, Pavlo; Johansen, Tom H.; Park, Tuson

2017-08-01

We investigate the effects of magnetic impurities on the upper critical field (μ 0 H c2) in La-doped CaFe2As2 (LaCa122) single crystals. The magnetic field dependency of the superconducting transition temperature (T c) for LaCa122 is rapidly suppressed at low fields up to ˜1 kOe despite its large μ 0 H c2(0) value on the order of tens of Tesla, resulting in a large positive curvature of μ 0 H c2(T) near T c. The magnetization hysteresis (M-H) loop at temperatures above T c shows a ferromagnetic-like signal and the M(H) value rapidly increases with increasing magnetic field up to ˜1 kOe. Taken together with the linear suppression of T c with the magnetization in the normal state, these results suggest that the large upward curvature of μ 0 H c2(T) near T c in La-doped CaFe2As2 mainly originates from the suppression of superconductivity due to the presence of magnetic impurities.

High-field transport properties of a P-doped BaFe2As2 film on technical substrate

PubMed Central

Iida, Kazumasa; Sato, Hikaru; Tarantini, Chiara; Hänisch, Jens; Jaroszynski, Jan; Hiramatsu, Hidenori; Holzapfel, Bernhard; Hosono, Hideo

2017-01-01

High temperature (high-Tc) superconductors like cuprates have superior critical current properties in magnetic fields over other superconductors. However, superconducting wires for high-field-magnet applications are still dominated by low-Tc Nb3Sn due probably to cost and processing issues. The recent discovery of a second class of high-Tc materials, Fe-based superconductors, may provide another option for high-field-magnet wires. In particular, AEFe2As2 (AE: Alkali earth elements, AE-122) is one of the best candidates for high-field-magnet applications because of its high upper critical field, Hc2, moderate Hc2 anisotropy, and intermediate Tc. Here we report on in-field transport properties of P-doped BaFe2As2 (Ba-122) thin films grown on technical substrates by pulsed laser deposition. The P-doped Ba-122 coated conductor exceeds a transport Jc of 105 A/cm2 at 15 T for main crystallographic directions of the applied field, which is favourable for practical applications. Our P-doped Ba-122 coated conductors show a superior in-field Jc over MgB2 and NbTi, and a comparable level to Nb3Sn above 20 T. By analysing the E − J curves for determining Jc, a non-Ohmic linear differential signature is observed at low field due to flux flow along the grain boundaries. However, grain boundaries work as flux pinning centres as demonstrated by the pinning force analysis. PMID:28079117

High-field transport properties of a P-doped BaFe2As2 film on technical substrate

NASA Astrophysics Data System (ADS)

Iida, Kazumasa; Sato, Hikaru; Tarantini, Chiara; Hänisch, Jens; Jaroszynski, Jan; Hiramatsu, Hidenori; Holzapfel, Bernhard; Hosono, Hideo

2017-01-01

High temperature (high-Tc) superconductors like cuprates have superior critical current properties in magnetic fields over other superconductors. However, superconducting wires for high-field-magnet applications are still dominated by low-Tc Nb3Sn due probably to cost and processing issues. The recent discovery of a second class of high-Tc materials, Fe-based superconductors, may provide another option for high-field-magnet wires. In particular, AEFe2As2 (AE: Alkali earth elements, AE-122) is one of the best candidates for high-field-magnet applications because of its high upper critical field, Hc2, moderate Hc2 anisotropy, and intermediate Tc. Here we report on in-field transport properties of P-doped BaFe2As2 (Ba-122) thin films grown on technical substrates by pulsed laser deposition. The P-doped Ba-122 coated conductor exceeds a transport Jc of 105 A/cm2 at 15 T for main crystallographic directions of the applied field, which is favourable for practical applications. Our P-doped Ba-122 coated conductors show a superior in-field Jc over MgB2 and NbTi, and a comparable level to Nb3Sn above 20 T. By analysing the E - J curves for determining Jc, a non-Ohmic linear differential signature is observed at low field due to flux flow along the grain boundaries. However, grain boundaries work as flux pinning centres as demonstrated by the pinning force analysis.

Effect of the next-nearest-neighbor hopping on the charge collective modes in the paramagnetic phase of the Hubbard model

NASA Astrophysics Data System (ADS)

Dao, Vu Hung; Frésard, Raymond

2017-10-01

The charge dynamical response function of the t-t'-U Hubbard model is investigated on the square lattice in the thermodynamical limit. The correlation function is calculated from Gaussian fluctuations around the paramagnetic saddle-point within the Kotliar and Ruckenstein slave-boson representation. The next-nearest-neighbor hopping only slightly affects the renormalization of the quasiparticle mass. In contrast a negative t'/t notably decreases (increases) their velocity, and hence the zero-sound velocity, at positive (negative) doping. For low (high) density n ≲ 0.5 (n ≳ 1.5) we find that it enhances (reduces) the damping of the zero-sound mode. Furthermore it softens (hardens) the upper-Hubbard-band collective mode at positive (negative) doping. It is also shown that our results differ markedly from the random-phase approximation in the strong-coupling limit, even at high doping, while they compare favorably with existing quantum Monte Carlo numerical simulations.

Doping evolution of the anisotropic upper critical fields in the iron-based superconductor Ba 1-xK xFe 2As 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanatar, Makariy A.; Liu, Yong; Jaroszynski, J.

In-plane resistivity measurements as a function of temperature and magnetic field up to 35 T with precise orientation within the crystallographic ac plane were used to study the upper critical field H c2 of the hole-doped iron-based superconductor Ba 1–xK xFe 2As 2. Compositions of the samples studied spanned from under- doped x=0.17 (T c=12 K) and x=0.22 (T c=20 K), both in the coexistence range of stripe magnetism and superconductivity, through optimal doping x=0.39 (T c=38.4 K) and x=0.47 (T c=37.2 K), to overdoped x=0.65 (T c=22 K) and x=0.83 (T c=10 K). Here, we find notable doping asymmetrymore » of the shapes of the anisotropic H c2(T), suggesting the important role of paramagnetic limiting effects in the H∥a configuration in overdoped compositions and multiband effects in underdoped compositions.« less

Doping evolution of the anisotropic upper critical fields in the iron-based superconductor Ba 1-xK xFe 2As 2

DOE PAGES

Tanatar, Makariy A.; Liu, Yong; Jaroszynski, J.; ...

2017-11-14

In-plane resistivity measurements as a function of temperature and magnetic field up to 35 T with precise orientation within the crystallographic ac plane were used to study the upper critical field H c2 of the hole-doped iron-based superconductor Ba 1–xK xFe 2As 2. Compositions of the samples studied spanned from under- doped x=0.17 (T c=12 K) and x=0.22 (T c=20 K), both in the coexistence range of stripe magnetism and superconductivity, through optimal doping x=0.39 (T c=38.4 K) and x=0.47 (T c=37.2 K), to overdoped x=0.65 (T c=22 K) and x=0.83 (T c=10 K). Here, we find notable doping asymmetrymore » of the shapes of the anisotropic H c2(T), suggesting the important role of paramagnetic limiting effects in the H∥a configuration in overdoped compositions and multiband effects in underdoped compositions.« less

Synthesis and characterization of Ca-doped LaMnAsO

NASA Astrophysics Data System (ADS)

Liu, Yong; Straszheim, Warren E.; Das, Pinaki; Islam, Farhan; Heitmann, Thomas W.; McQueeney, Robert J.; Vaknin, David

2018-05-01

We report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3 + site by Ca2 +. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1 -xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤0.01 . Magnetic susceptibility of the parent and the x =0.002 (xnom=0.04 ) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P 4 /n m m ) structure upon doping and the antiferromagnetic ordering temperature, TN=355 ±5 K.

Development of high resolution phoswich depth-of-interaction block detectors utilizing Mg co-doped new scintillators

NASA Astrophysics Data System (ADS)

Kobayashi, Takahiro; Yamamoto, Seiichi; Yeom, Jung-Yeol; Kamada, Kei; Yoshikawa, Akira

2017-12-01

To correct for parallax error in positron emission tomography (PET), phoswich depth-of-interaction (DOI) detector using multiple scintillators with different decay times is a practical approach. However not many scintillator combinations suitable for phoswich DOI detector have been reported. Ce doped Gd3Ga3Al2O12 (GFAG) is a newly developed promising scintillator for PET detector, which has high density, high light output, appropriate light emission wavelength for silicon-photomultiplier (Si-PM) and faster decay time than that of Ce doped Gd3Al2Ga3O12 (GAGG). In this study, we developed a Si-PM based phoswich DOI block detector of GFAG with GAGG crystal arrays and evaluated its performance. We assembled a GFAG block and a GAGG block and they were optically coupled in depth direction to form a phoswich detector block. The phoswich block was optically coupled to a Si-PM array with a 1 mm thick light guide. The sizes of the GFAG and GAGG pixels were 0.9 mm x 0.9 mm x 7.5 mm and they were arranged into 24 x 24 matrix with 0.1 mm thick BaSO4 as reflector. We conducted the performance evaluation for two types of configurations; GFAG block arranged in upper layer (GFAG/GAGG) and GAGG arranged in upper layer (GAGG/GFAG). The measured two dimensional position histograms of these block detectors showed good separation and pulse shape spectra produced two distinct peaks for both configurations although some difference in energy spectra were observed. These results indicate phoswich block detectors composed of GFAG and GAGG are promising for high resolution DOI PET systems.

Growth and spectral-luminescent study of SrMoO4 crystals doped with Tm3+ ions

NASA Astrophysics Data System (ADS)

Dunaeva, E. E.; Zverev, P. G.; Doroshenko, M. E.; Nekhoroshikh, A. V.; Ivleva, L. I.; Osiko, V. V.

2016-03-01

SrMoO4 crystals doped with Tm3+ ions have been produced from a melt using the Czochralski method; their spectral-luminescent characteristics have been studied, and laser radiation has been generated at the wavelength of 1.94 μm using laser-diode excitation. The high absorption section at the wavelength of 795 nm, the fairly high luminescence section, the long lifetime at the upper laser level 3F4 of 1.5 ms, and a wide luminescence band allow one to hope for developing efficient tunable Tm3+: SrMoO4 crystal lasers with diode pumping in the range of 1.7-2.0 μm, which are capable of implementing SRS self-transformation of radiation into the middle IR band.

Determination of bulk and surface superconducting properties of N 2-doped cold worked, heat treated and electro-polished SRF grade niobium

DOE PAGES

Chetri, Santosh; Larbalestier, David C.; Lee, Peter J.; ...

2015-12-01

In this study, nitrogen-doped cavities show significant performance improvement in the medium accelerating field regime due to a lowered RF surface resistivity. However, the mechanism of enhancement has not been clearly explained. Our experiments explore how N 2-doping influences Nb bulk and surface superconducting properties, and compare the N 2-doped properties with those obtained previously with conventionally treated samples. High purity Nb-rod was mechanically deformed and post treated based on a typical SRF cavity treatment recipe. The onset of flux penetration at H c1, and the upper and the surface critical fields, H c2 and H c3, were characterized bymore » magnetic hysteresis and AC susceptibility techniques. The surface depth profile responsible for superconductivity was examined by changing AC amplitude in AC susceptibility, and the microstructure was directly observed with EBSD-OIM. We are also investigating surface chemistry for detailed composition using XPS. We have found that N 2-doping at 800 °C significantly reduces the H c3/H c2 ratio towards the ideal value of ~1.7, and conclude that AC susceptibility is capable of following changes to the surface properties induced by N 2-doping.« less

Synthesis and characterization of Ca-doped LaMnAsO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yong; Straszheim, Warren E.; Das, Pinaki

Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La 3+ site by Ca 2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La 1–xCa x)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(x nom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of bothmore » the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, T N = 355 ± 5 K.« less

Synthesis and characterization of Ca-doped LaMnAsO

DOE PAGES

Liu, Yong; Straszheim, Warren E.; Das, Pinaki; ...

2018-05-18

Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La 3+ site by Ca 2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La 1–xCa x)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(x nom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of bothmore » the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, T N = 355 ± 5 K.« less

High-field transport properties of a P-doped BaFe2As2 film on technical substrate.

PubMed

Iida, Kazumasa; Sato, Hikaru; Tarantini, Chiara; Hänisch, Jens; Jaroszynski, Jan; Hiramatsu, Hidenori; Holzapfel, Bernhard; Hosono, Hideo

2017-01-12

High temperature (high-T c ) superconductors like cuprates have superior critical current properties in magnetic fields over other superconductors. However, superconducting wires for high-field-magnet applications are still dominated by low-T c Nb 3 Sn due probably to cost and processing issues. The recent discovery of a second class of high-T c materials, Fe-based superconductors, may provide another option for high-field-magnet wires. In particular, AEFe 2 As 2 (AE: Alkali earth elements, AE-122) is one of the best candidates for high-field-magnet applications because of its high upper critical field, H c2 , moderate H c2 anisotropy, and intermediate T c . Here we report on in-field transport properties of P-doped BaFe 2 As 2 (Ba-122) thin films grown on technical substrates by pulsed laser deposition. The P-doped Ba-122 coated conductor exceeds a transport J c of 10 5  A/cm 2 at 15 T for main crystallographic directions of the applied field, which is favourable for practical applications. Our P-doped Ba-122 coated conductors show a superior in-field J c over MgB 2 and NbTi, and a comparable level to Nb 3 Sn above 20 T. By analysing the E - J curves for determining J c , a non-Ohmic linear differential signature is observed at low field due to flux flow along the grain boundaries. However, grain boundaries work as flux pinning centres as demonstrated by the pinning force analysis.

Ab Initio Simulations and Electronic Structure of Lithium-Doped Ionic Liquids: Structure, Transport, and Electrochemical Stability.

PubMed

Haskins, Justin B; Bauschlicher, Charles W; Lawson, John W

2015-11-19

Density functional theory (DFT), density functional theory molecular dynamics (DFT-MD), and classical molecular dynamics using polarizable force fields (PFF-MD) are employed to evaluate the influence of Li(+) on the structure, transport, and electrochemical stability of three potential ionic liquid electrolytes: N-methyl-N-butylpyrrolidinium bis(trifluoromethanesulfonyl)imide ([pyr14][TFSI]), N-methyl-N-propylpyrrolidinium bis(fluorosulfonyl)imide ([pyr13][FSI]), and 1-ethyl-3-methylimidazolium boron tetrafluoride ([EMIM][BF4]). We characterize the Li(+) solvation shell through DFT computations of [Li(Anion)n]((n-1)-) clusters, DFT-MD simulations of isolated Li(+) in small ionic liquid systems, and PFF-MD simulations with high Li-doping levels in large ionic liquid systems. At low levels of Li-salt doping, highly stable solvation shells having two to three anions are seen in both [pyr14][TFSI] and [pyr13][FSI], whereas solvation shells with four anions dominate in [EMIM][BF4]. At higher levels of doping, we find the formation of complex Li-network structures that increase the frequency of four anion-coordinated solvation shells. A comparison of computational and experimental Raman spectra for a wide range of [Li(Anion)n]((n-1)-) clusters shows that our proposed structures are consistent with experiment. We then compute the ion diffusion coefficients and find measures from small-cell DFT-MD simulations to be the correct order of magnitude, but influenced by small system size and short simulation length. Correcting for these errors with complementary PFF-MD simulations, we find DFT-MD measures to be in close agreement with experiment. Finally, we compute electrochemical windows from DFT computations on isolated ions, interacting cation/anion pairs, and liquid-phase systems with Li-doping. For the molecular-level computations, we generally find the difference between ionization energy and electron affinity from isolated ions and interacting cation/anion pairs to provide upper and lower bounds, respectively, to experiment. In the liquid phase, we find the difference between the lowest unoccupied and highest occupied electronic levels in pure and hybrid functionals to provide lower and upper bounds, respectively, to experiment. Li-doping in the liquid-phase systems results in electrochemical windows little changed from the neat systems.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Cobalt-Doped Nickel Phosphite for High Performance of Electrochemical Energy Storage.

PubMed

Li, Bing; Shi, Yuxin; Huang, Kesheng; Zhao, Mingming; Qiu, Jiaqing; Xue, Huaiguo; Pang, Huan

2018-03-01

Compared to single metallic Ni or Co phosphides, bimetallic Ni-Co phosphides own ameliorative properties, such as high electrical conductivity, remarkable rate capability, upper specific capacity, and excellent cycle performance. Here, a simple one-step solvothermal process is proposed for the synthesis of bouquet-like cobalt-doped nickel phosphite (Ni 11 (HPO 3 ) 8 (OH) 6 ), and the effect of the structure on the pseudocapacitive performance is investigated via a series of electrochemical measurements. It is found that when the cobalt content is low, the glycol/deionized water ratio is 1, and the reaction is under 200 °C for 20 h, the morphology of the sample is uniform and has the highest specific surface area. The cobalt-doped Ni 11 (HPO 3 ) 8 (OH) 6 electrode presents a maximum specific capacitance of 714.8 F g -1 . More significantly, aqueous and solid-state flexible electrochemical energy storage devices are successfully assembled. The aqueous device shows a high energy density of 15.48 mWh cm -2 at the power density of 0.6 KW cm -2 . The solid-state device shows a high energy density of 14.72 mWh cm -2 at the power density of 0.6 KW cm -2 . These excellent performances confirm that the cobalt-doped Ni 11 (HPO 3 ) 8 (OH) 6 are promising materials for applications in electrochemical energy storage devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Physics and material science of ultra-high quality factor superconducting resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vostrikov, Alexander

2015-08-01

The nitrogen doping into niobium superconducting radio frequency cavity walls aiming to improve the fundamental mode quality factor is the subject of the research in the given work. Quantitative nitrogen diffusion into niobium model calculating the concentration profile was developed. The model estimations were confirmed with secondary ion mass spectrometry technique measurements. The model made controlled nitrogen doping recipe optimization possible. As a result the robust reproducible recipe for SRF cavity walls treatment with nitrogen doping was developed. The cavities produced with optimized recipe met LCLS–II requirements on quality factor of 2.7 ∙ 10 10 at acceleration field of 16more » MV/m. The microscopic effects of nitrogen doping on superconducting niobium properties were studied with low energy muon spin rotation technique and magnetometer measurements. No significant effect of nitrogen on the following features was found: electron mean free path, magnetic field penetration depth, and upper and surface critical magnetic fields. It was detected that for nitrogen doped niobium samples magnetic flux starts to penetrate inside the superconductor at lower external magnetic field value compared to the low temperature baked niobium ones. This explains lower quench field of SRF cavities treated with nitrogen. Quality factor improvement of fundamental mode forced to analyze the high order mode (HOM) impact on the particle beam dynamics. Both resonant and cumulative effects caused by monopole and dipole HOMs respectively are found to be negligible within the requirements for LCLS–II.« less

The effects of annealing temperature on the in-field Jc and surface pinning in silicone oil doped MgB2 bulks and wires

NASA Astrophysics Data System (ADS)

Hossain, M. S. A.; Motaman, A.; Çiçek, Ö.; Ağıl, H.; Ertekin, E.; Gencer, A.; Wang, X. L.; Dou, S. X.

2012-12-01

The effects of sintering temperature on the lattice parameters, full width at half maximum (FWHM), strain, critical temperature (Tc), critical current density (Jc), irreversibility field (Hirr), upper critical field (Hc2), and resistivity (ρ) of 10 wt.% silicone oil doped MgB2 bulk and wire samples are investigated in state of the art by this article. The a-lattice parameter of the silicone oil doped samples which were sintered at different temperatures was drastically reduced from 3.0864 Å to 3.0745 Å, compared to the un-doped samples, which indicates the substitution of the carbon (C) into the boron sites. It was found that sintered samples at the low temperature of 600 °C shows more lattice distortion by more C-substitution and higher strain, lower Tc, higher impurity scattering, and enhancement of both magnetic Jc and Hc2, compared to those sintered samples at high temperatures. The flux pinning mechanism has been analyzed based on the extended normalized pinning force density fp = Fp/Fp,max scaled with b = B/Bmax. Results show that surface pinning is the dominant pinning mechanism for the doped sample sintered at the low temperature of 600 °C, while point pinning is dominant for the un-doped sample. The powder in tube (PIT) MgB2 wire was also fabricated by using of this liquid doping and found that both transport Jc and n-factor increased which proves this cheap and abundant silicone oil doping can be a good candidate for industrial application.

Unified electronic phase diagram for hole-doped high- Tc cuprates

NASA Astrophysics Data System (ADS)

Honma, T.; Hor, P. H.

2008-05-01

We have analyzed various characteristic temperatures and energies of hole-doped high- Tc cuprates as a function of a dimensionless hole-doping concentration (pu) . Entirely based on the experimental grounds, we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures ( T∗ ’s) and their corresponding energies ( E∗ ’s) converge as pu increases in the underdoped regime. T∗ ’s and E∗ ’s merge together with the Tc curve and 3.5kBTc curve at pu˜1.1 in the overdoped regime, respectively. They finally go to zero at pu˜1.3 . The UEPD follows an asymmetric half-dome-shaped Tc curve, in which Tc appears at pu˜0.4 , reaches a maximum at pu˜1 , and rapidly goes to zero at pu˜1.3 . The asymmetric half-dome-shaped Tc curve is at odds with the well-known symmetric superconducting dome for La2-xSrxCuO4 (SrD-La214), in which two characteristic temperatures and energies converge as pu increases and merge together at pu˜1.6 , where Tc goes to zero. The UEPD clearly shows that pseudogap phase precedes and coexists with high temperature superconductivity in the underdoped and overdoped regimes, respectively. It is also clearly seen that the upper limit of high- Tc cuprate physics ends at a hole concentration that equals to 1.3 times the optimal doping concentration for almost all high- Tc cuprate materials and 1.6 times the optimal doping concentration for the SrD-La214. Our analysis strongly suggests that pseudogap is a precursor of high- Tc superconductivity, the observed quantum critical point inside the superconducting dome may be related to the end point of UEPD, and the normal state of the underdoped and overdoped high temperature superconductors cannot be regarded as a conventional Fermi liquid phase.

Nematic topological superconducting phase in Nb-doped Bi2Se3

NASA Astrophysics Data System (ADS)

Shen, Junying; He, Wen-Yu; Yuan, Noah Fan Qi; Huang, Zengle; Cho, Chang-woo; Lee, Seng Huat; Hor, Yew San; Law, Kam Tuen; Lortz, Rolf

2017-10-01

A nematic topological superconductor has an order parameter symmetry, which spontaneously breaks the crystalline symmetry in its superconducting state. This state can be observed, for example, by thermodynamic or upper critical field experiments in which a magnetic field is rotated with respect to the crystalline axes. The corresponding physical quantity then directly reflects the symmetry of the order parameter. We present a study on the superconducting upper critical field of the Nb-doped topological insulator NbxBi2Se3 for various magnetic field orientations parallel and perpendicular to the basal plane of the Bi2Se3 layers. The data were obtained by two complementary experimental techniques, magnetoresistance and DC magnetization, on three different single crystalline samples of the same batch. Both methods and all samples show with perfect agreement that the in-plane upper critical fields clearly demonstrate a two-fold symmetry that breaks the three-fold crystal symmetry. The two-fold symmetry is also found in the absolute value of the magnetization of the initial zero-field-cooled branch of the hysteresis loop and in the value of the thermodynamic contribution above the irreversibility field, but also in the irreversible properties such as the value of the characteristic irreversibility field and in the width of the hysteresis loop. This provides strong experimental evidence that Nb-doped Bi2Se3 is a nematic topological superconductor similar to the Cu- and Sr-doped Bi2Se3.

Absorption spectra and nonlinear transmission (at λ = 2940 nm) of a diffusion-doped Fe{sup 2+}:ZnSe single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bufetova, G A; Gulyamova, E S; Il'ichev, N N

2015-06-30

Transmission spectra of a ZnSe sample diffusion-doped with Fe{sup 2+} ions have been measured in the wavelength range 500 – 7000 nm. A broad absorption band in the range 500 – 1500 nm has been observed in both doped and undoped regions of the sample. This band is possibly due to deviations from stoichiometry in the course of diffusion doping. The transmission of the Fe{sup 2+}:ZnSe sample at a wavelength of 2940 nm has been measured at various dopant concentrations and high peak pulse intensities (up to 8 MW cm{sup -2}). The samples have been shown to be incompletely bleached:more » during a laser pulse, the transmission first increases, reaches a maximum, and then falls off. Our results suggest that the incomplete bleaching cannot be accounted for by excited-state absorption. The incomplete bleaching (as well as the transmission maximum) is due to the heating of the sample, which leads to a reduction in upper level lifetime and, accordingly, to an increase in absorption saturation intensity. (nonlinear optical phenomena)« less

Enhanced High Temperature Piezoelectrics Based on BiScO3-PbTiO3 Ceramics

NASA Technical Reports Server (NTRS)

Sehirlioglu, Alp; Sayir, Ali; Dynys, Fred

2009-01-01

High-temperature piezoelectrics are a key technology for aeronautics and aerospace applications such as fuel modulation to increase the engine efficiency and decrease emissions. The principal challenge for the insertion of piezoelectric materials is the limitation on upper use temperature which is due to low Curie-Temperature (TC) and increasing electrical conductivity. BiScO3-PbTiO3 (BS-PT) system is a promising candidate for improving the operating temperature for piezoelectric actuators due to its high TC (greater than 400 C). Bi2O3 was shown to be a good sintering aid for liquid phase sintering resulting in reduced grain size and increased resistivity. Zr doped and liquid phase sintered BS-PT ceramics exhibited saturated and square hysteresis loops with enhanced remenant polarization (37 microC per square centimeter) and coercive field (14 kV/cm). BS-PT doped with Mn showed enhanced field induced strain (0.27% at 50kV/cm). All the numbers indicated in parenthesis were collected at 100 C.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhuang, J. C.; Li, Z.; Xu, X.

We present a detailed investigation on the doping dependence of the upper critical field H{sub c2}(T) of FeSe{sub x}Te{sub 1−x} thin films (0.18 ≤ x ≤ 0.90) by measuring the electrical resistivity as a function of magnetic field. The H{sub c2}(T) curves exhibit a downturn behavior with decreasing temperature in all the samples, owing to the Pauli-limited effect (spin paramagnetic effect). The Pauli-limited effect on the upper critical field can be monotonically modulated by variation of the Se/Te composition. Our results show that Te-doping induced disorder and excess Fe atoms give rise to enhancement of the Pauli-limited effect.

New, efficient, room temperature mid-infrared laser at 3.9 mu m in holmium:barium yttrium fluoride and visible praseodymium:lithium yttrium fluoride laser for holography

NASA Astrophysics Data System (ADS)

Tabirian, Anna Murazian

This dissertation describes a series of experiments and theoretical studies, which led to the development of two new solid state laser systems: efficient, room temperature mid-infrared solid state laser at 3.9 μm in Ho 3+ doped BaY2F8 and visible Pr:LiYF4 laser at 640 mn for holography. The 3.9 μm laser wavelength matches the peak of mid-IR atmospheric transmission window, which makes it very important for multiple applications such as remote sensing, imaging, IR countermeasures, eye-safe lidars and environmental agent detection. We present the results of spectroscopic evaluations and numerical modeling of energy transfer processes between rare earth ions of Ho3+ doped in two host laser materials: BaY2F8 and LiYF 4. The 3.9 μm laser is based on transition with upper laser lifetime considerably shorter than lower level lifetime, which in general leads to self-terminating laser action in the cw mode or at high repetition rates. Therefore, three different pumping and lasing schemes, that could allow overcoming these limitations have been suggested and studied. First, cascade laser action at 1.4 μm and 3.9 μm was achieved with low thresholds and near-theoretical quantum efficiency in Ho3+ doped BaY2F8 pumped at 532 nm by a Q- switched frequency doubled Nd:YAG laser. Next, the feasibility of achieving 3.9 μm laser with cw resonant cascade pumping at 750 mn by a Ti:Sapphire laser was studied. New energy transfer process, such as upconversion from terminal level of the 3.9 μm laser was observed in high concentration Ho3+ doped BaY2F 8. Finally, we proposed to use high-energy flashlamp pumped tunable Cr:LiSAF laser operating in long pulse regime for the direct pumping of the upper level of the 3.9 μm laser. Pulsed laser oscillation at 3.9 μm is demonstrated in Ho3+ doped BaY2F8 with low threshold of 3 mJ and a slope efficiency of 14.5% with maximal energy of 30 mJ. The second part of the thesis describes the design and the development of the visible Pr:LiYF4 laser for holography at 640 nm resonantly pumped by the frequency-doubled flashlamp pumped tunable Cr:LiSAF laser at 444 nm.

Selenium doping NaCl-type superconductor: SnAs1-xSex (x=0-0.13)

NASA Astrophysics Data System (ADS)

He, Jianqiao; Zhang, Xian; Lai, Xiaofang; Huang, Fuqiang

2017-08-01

Selenium doped NaCl-type superconductor SnAs1-xSex (x=0-0.13) were made through solid state reaction. EDS results show that Se content increases with Se doping until over doped in SnAs0.9Se0.1 and SnAs0.87Se0.13 (around 2.7%). PXRD patterns confirmed the main phase of the six doped samples are SnAs. The cell parameters of doped SnAs were calculated using Rietveld refinements. Their cell parameters increase almost linearly with x until x reaches 13%. Single crystal diffraction measurement results show that there are no interstitial atom in doped SnAs. We conclude that Se atoms are substitutional atoms in SnAs. The superconducting onset temperatures (Tconset, under a magnetic field of 10 Oe) of SnAs increased from 3.8 K to 4.5 K by 10% Se doping. ρ-T curves of 1%, 5% and 10% Se doped samples show that all the three samples are metallic. Upper critical field Hc2(0) of 1%, 5% and 10% Se doped samples are 294 Oe, 649 Oe and 1011 Oe, respectively.

Optical amplifier operating at 1.3 microns useful for telecommunications and based on dysprosium-doped metal chloride host materials

DOEpatents

Page, R.H.; Schaffers, K.I.; Payne, S.A.; Krupke, W.F.; Beach, R.J.

1997-12-02

Dysprosium-doped metal chloride materials offer laser properties advantageous for use as optical amplifiers in the 1.3 {micro}m telecommunications fiber optic network. The upper laser level is characterized by a millisecond lifetime, the host material possesses a moderately low refractive index, and the gain peak occurs near 1.31 {micro}m. Related halide materials, including bromides and iodides, are also useful. The Dy{sup 3+}-doped metal chlorides can be pumped with laser diodes and yield 1.3 {micro}m signal gain levels significantly beyond those currently available. 9 figs.

Optical amplifier operating at 1.3 microns useful for telecommunications and based on dysprosium-doped metal chloride host materials

DOEpatents

Page, Ralph H.; Schaffers, Kathleen I.; Payne, Stephen A.; Krupke, William F.; Beach, Raymond J.

1997-01-01

Dysprosium-doped metal chloride materials offer laser properties advantageous for use as optical amplifiers in the 1.3 .mu.m telecommunications fiber optic network. The upper laser level is characterized by a millisecond lifetime, the host material possesses a moderately low refractive index, and the gain peak occurs near 1.31 .mu.m. Related halide materials, including bromides and iodides, are also useful. The Dy.sup.3+ -doped metal chlorides can be pumped with laser diodes and yield 1.3 .mu.m signal gain levels significantly beyond those currently available.

Upper critical field reaches 90 tesla near the Mott transition in fulleride superconductors

DOE PAGES

Kasahara, Y.; Takeuchi, Y.; Zadik, R. H.; ...

2017-02-17

Controlled access to the border of the Mott insulating state by variation of control parameters offers exotic electronic states such as anomalous and possibly high-transition-temperature (T c) superconductivity. The alkali-doped fullerides show a transition from a Mott insulator to a superconductor for the first time in three-dimensional materials, but the impact of dimensionality and electron correlation on superconducting properties has remained unclear. Here we show that, near the Mott insulating phase, the upper critical field H c2 of the fulleride superconductors reaches values as high as ~90 T—the highest among cubic crystals. This is accompanied by a crossover from weak-more » to strong-coupling superconductivity and appears upon entering the metallic state with the dynamical Jahn–Teller effect as the Mott transition is approached. Lastly, these results suggest that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity with high-T c and high-H c2.« less

Upper critical field reaches 90 tesla near the Mott transition in fulleride superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasahara, Y.; Takeuchi, Y.; Zadik, R. H.

Controlled access to the border of the Mott insulating state by variation of control parameters offers exotic electronic states such as anomalous and possibly high-transition-temperature (T c) superconductivity. The alkali-doped fullerides show a transition from a Mott insulator to a superconductor for the first time in three-dimensional materials, but the impact of dimensionality and electron correlation on superconducting properties has remained unclear. Here we show that, near the Mott insulating phase, the upper critical field H c2 of the fulleride superconductors reaches values as high as ~90 T—the highest among cubic crystals. This is accompanied by a crossover from weak-more » to strong-coupling superconductivity and appears upon entering the metallic state with the dynamical Jahn–Teller effect as the Mott transition is approached. Lastly, these results suggest that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity with high-T c and high-H c2.« less

Electrical and optical properties of ITO and ITO/Cr-doped ITO films

NASA Astrophysics Data System (ADS)

Caricato, A. P.; Cesaria, M.; Luches, A.; Martino, M.; Maruccio, G.; Valerini, D.; Catalano, M.; Cola, A.; Manera, M. G.; Lomascolo, M.; Taurino, A.; Rella, R.

2010-12-01

In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin-polarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological and electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV-Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as ˜4×10-4 Ω cm, an energy gap of ˜4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness (˜0.4-0.5 nm) and resistivity (up to ˜8×10-4 Ω cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm.

Mahan polaritons and their lifetime due to hole recoil

NASA Astrophysics Data System (ADS)

Baeten, Maarten; Wouters, Michiel

2015-11-01

We present a theoretical study on polaritons in doped semiconductor microcavities, focussing on a cavity mode that is resonant with the Fermi edge. In agreement with experimental results, the strong light-matter coupling is maintained under very high doping within our ladder diagram approximation. In particular, we find that the polaritons result from the strong admixing of the cavity mode with the Mahan exciton. The upper Mahan polariton, lying in the electron-hole continuum, always remains visible and has a linewidth due to free interband electron-hole creation. The lower Mahan polariton acquires a finite lifetime due to relaxation of the valence band hole if the electron density exceeds a certain critical value. However, if the Rabi splitting exceeds the inverse hole recoil time, the lower polariton lifetime is only limited by the cavity properties.

Potassium titanyl arsenate based cascaded optical parametric oscillator emit at 2.5 µm derived by neodymium-doped yttrium lithium fluoride laser

NASA Astrophysics Data System (ADS)

Duan, Yanmin; Zhang, Jing; Guo, Junhong; Zhu, Haiyong; Zhang, Yongchang; Xu, Changwen; Wang, Hongyan; Zhang, Yaoju

2018-04-01

We reported a potassium titanyl arsenate (KTA) based cascaded optical parametric oscillator (OPO). The secondary OPO signal light at 2.5 µm was obtained with two OPO processes in one non-critical phase matching cut KTA crystal. This cascaded OPO was driven by a Q-switched neodymium-doped yttrium lithium fluoride (Nd:YLF) laser at 1047 nm. Making full use of the negative thermal lens effect and long upper level fluorescence lifetime of Nd:YLF, signal power of 605 mW at 2503 nm was achieved with a pulse repetition frequency of 15 kHz and an incident diode pump power of 9.7 W. Therefore, the cascaded OPO derived by Q-switched Nd:YLF laser could provide high peak power pulsed laser emission in mid-infrared band.

Superconducting properties of Ba(Fe1-xNix)2As2 thin films in high magnetic fields

NASA Astrophysics Data System (ADS)

Richter, Stefan; Kurth, Fritz; Iida, Kazumasa; Pervakov, Kirill; Pukenas, Aurimas; Tarantini, Chiara; Jaroszynski, Jan; Hänisch, Jens; Grinenko, Vadim; Skrotzki, Werner; Nielsch, Kornelius; Hühne, Ruben

2017-01-01

We report on the electrical transport properties of epitaxial Ba(Fe1-xNix)2As2 thin films grown by pulsed laser deposition in static magnetic fields up to 35 T. The thin film shows a critical temperature of 17.2 K and a critical current density of 5.7 × 105 A/cm2 in self field at 4.2 K, while the pinning is dominated by elastic pinning at two-dimensional nonmagnetic defects. Compared to the single-crystal data, we find a higher slope of the upper critical field for the thin film at a similar doping level and a small anisotropy. Also, an unusual small vortex liquid phase was observed at low temperatures, which is a striking difference to Co-doped BaFe2As2 thin films.

Enhancement of the in-field Jc of MgB2 via SiCl4 doping

NASA Astrophysics Data System (ADS)

Wang, Xiao-Lin; Dou, S. X.; Hossain, M. S. A.; Cheng, Z. X.; Liao, X. Z.; Ghorbani, S. R.; Yao, Q. W.; Kim, J. H.; Silver, T.

2010-06-01

We present the following results. (1) We introduce a doping source for MgB2 , liquid SiCl4 , which is free of C, to significantly enhance the irreversibility field (Hirr) , the upper critical field (Hc2) , and the critical current density (Jc) with a little reduction in the critical temperature (Tc) . (2) Although Si can not be incorporated into the crystal lattice, a significant reduction in the a -axis lattice parameter was found, to the same extent as for carbon doping. (3) Based on the first-principles calculation, it is found that it is reliable to estimate the C concentration just from the reduction in the a -lattice parameter for C-doped MgB2 polycrystalline samples that are prepared at high sintering temperatures, but not for those prepared at low sintering temperatures. Strain effects and magnesium deficiency might be reasons for the a -lattice reduction in non-C or some of the C-added MgB2 samples. (4) The SiCl4 -doped MgB2 shows much higher Jc with superior field dependence above 20 K compared to undoped MgB2 and MgB2 doped with various carbon sources. (5) We introduce a parameter, RHH (Hc2/Hirr) , which can clearly reflect the degree of flux-pinning enhancement, providing us with guidance for further enhancing Jc . (6) It was found that spatial variation in the charge-carrier mean free path is responsible for the flux-pinning mechanism in the SiCl4 treated MgB2 with large in-field Jc .

In situ measurements of the optical absorption of dioxythiophene-based conjugated polymers

NASA Astrophysics Data System (ADS)

Hwang, J.; Schwendeman, I.; Ihas, B. C.; Clark, R. J.; Cornick, M.; Nikolou, M.; Argun, A.; Reynolds, J. R.; Tanner, D. B.

2011-05-01

Conjugated polymers can be reversibly doped by electrochemical means. This doping introduces new subband-gap optical absorption bands in the polymer while decreasing the band-gap absorption. To study this behavior, we have prepared an electrochemical cell allowing in situ measurements of the optical properties of the polymer. The cell consists of a thin polymer film deposited on gold-coated Mylar behind which is another polymer that serves as a counterelectrode. An infrared transparent window protects the upper polymer from ambient air. By adding a gel electrolyte and making electrical connections to the polymer-on-gold films, one may study electrochromism in a wide spectral range. As the cell voltage (the potential difference between the two electrodes) changes, the doping level of the conjugated polymer films is changed reversibly. Our experiments address electrochromism in poly(3,4-ethylenedioxythiophene) (PEDOT) and poly(3,4-dimethylpropylenedioxythiophene) (PProDOT-Me2). This closed electrochemical cell allows the study of the doping induced subband-gap features (polaronic and bipolaronic modes) in these easily oxidized and highly redox switchable polymers. We also study the changes in cell spectra as a function of polymer thickness and investigate strategies to obtain cleaner spectra, minimizing the contributions of water and gel electrolyte features.

Lateral and Vertical Organic Transistors

NASA Astrophysics Data System (ADS)

Al-Shadeedi, Akram

An extensive study has been performed to provide a better understanding of the operation principles of doped organic field-effect transistors (OFETs), organic p-i-n diodes, Schottky diodes, and organic permeable base transistors (OPBTs). This has been accomplished by a combination of electrical and structural characterization of these devices. The discussion of doped OFETs focuses on the shift of the threshold voltage due to increased doping concentrations and the generation and transport of minority charge carriers. Doping of pentacene OFETs is achieved by co-evaporation of pentacene with the n-dopant W2(hpp)4. It is found that pentacene thin film are efficiently doped and that a conductivity in the range of 2.6 x 10-6 S cm-1 for 1 wt% to 2.5 x 10-4 S cm-1 for 16 wt% is reached. It is shown that n-doped OFET consisting of an n-doped channel and n-doped contacts are ambipolar. This behavior is surprising, as n-doping the contacts should suppress direct injection of minority charge carriers (holes). It was proposed that minority charge carrier injection and hence the ambipolar characteristic of n-doped OFETs can be explained by Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. It is shown that the electric field in this layer is indeed in the range of the breakdown field of pentacene based p-i-n Zener homodiodes. Doping the channel has a profound influence on the onset voltage of minority (hole) conduction. The onset voltage can be shifted by lightly n-doping the channel. The shift of onset voltage can be explained by two mechanisms: first, due to a larger voltage that has to be applied to the gate in order to fully deplete the n-doped layer. Second, it can be attributed to an increase in hole trapping by inactive dopants. Moreover, it has been shown that the threshold voltage of majority (electron) conduction is shifted by an increase in the doping concentration, and that the ambipolar OFETs can be turned into unipolar OFETs at high doping concentrations. In subsequent chapters, the working mechanisms of OPBTs are discussed. OPBTs consist of two Schottky diodes (top and bottom diode), and the charge transport in these C60-based Schottky diodes is studied first. Two transport regimes can be distinguished in forward direction - injection limited currents (ILCs) and space charge limited currents (SCLCs). It is found that the current increases exponentially with applied voltage in the ILC regime and depends quadratically on the applied voltage in the SCLC regime. Furthermore, it is observed that the forward and backward currents of the Schottky diode are increased by decreasing the C60 layer thickness, increasing the active area, and increasing the temperature. Furthermore, in order to reach a high performance, various treatments have been applied. Air exposure, a variation of the thickness of the top electrode, as well as annealing of the diodes are used to optimize the diodes. OPBTs are processed by using the semiconductor C60 due its high charge carrier mobility and good film-forming properties. Again, the working mechanism of OPBTs is studied by electrical characterization (base-sweep measurements and output characteristics). To achieve a high performance of OPBTs, various treatments and techniques have been applied. The annealing of the OPBTs after fabrication changes the morphology of the base electrode. Thus, openings (pinholes) are formed in the base electrode, which enables a high current transfer from the upper to lower semiconductor layer. The formation of openings is proved by analyzing SEM and TEM image of the base electrode. Adding a doped layer at the emitter is another process to optimize the OPBTs. The doped layer ensures a high charge carrier injection at the emitter, leading to a high transmission and current gain. Furthermore, it has been observed that the ON/OFF ratio and transconductance of OPBTs increases by decreasing their active area. A very high transconductance gm of 37 S/cm2 is reached, which has the potential to boost the switching speed of organic transistors to 5 MHz. Furthermore, it is shown that the base electrode thickness is an essential parameter for OPBTs. The current gain beta decreases by increasing thickness of base electrode, whereas the ON/OFF ratio increases for thicker base electrodes.

Systematic study of vortex pinning and liquid-glass phase transition in BaFe2-x Ni x As2 single crystals

NASA Astrophysics Data System (ADS)

Vlasenko, V. A.; Sobolevskiy, O. A.; Sadakov, A. V.; Pervakov, K. S.; Gavrilkin, S. Yu.; Dik, A. V.; Eltsev, Yu. F.

2018-01-01

The vortex pinning and liquid-glass transition have been studied in BaFe2-x Ni x As2 single crystals with different doping levels (x = 0.065; 0.093; 0.1; 0.14; 0.18). We found that Ni-doped Ba-122 has rather narrow vortex-liquid state region. Our results show that the temperature dependence of the resistivity as well as I-V characteristics of Ni-doped Ba-122 is consistent with 3D vortex-glass model. It was found that δl-pinning gives the main contribution to overall pinning in 122 Ni-doped system. The vortex phase diagrams for different doping levels were built based on the obtained data of temperature of the vortex-glass transition T g and the upper critical magnetic field H c2.

Analytical thermal resistance model for high power double-clad fiber on rectangular plate with convective cooling at upper and lower surfaces

NASA Astrophysics Data System (ADS)

Lv, Yi; Zheng, Huai; Liu, Sheng

2018-07-01

Whether convective heat transfer on the upper surface of the substrate is used or not, the thermal resistance network models of optical fiber embedded in the substrate are established in this research. These models are applied to calculate the heat dissipation in a high power ytterbium doped double-clad fiber (YDCF) power amplifier. Firstly, the temperature values of two points on the fiber are tested when there is no convective heat transfer on the upper surface. Then, the numerical simulation is used to verify the temperature change of the fiber with the effective convective heat transfer coefficient of the lower surface heff increasing when the upper surface is subjected to three loading conditions with hu as 1, 5 and 15 W/(m2 K), respectively. The axial temperature distribution of the optical fiber is also presented at four different values for hu when heff is 30 W/(m2 K). Absolute values of the relative errors are less than 7.08%. The results show that the analytical models can accurately calculate the temperature distribution of the optical fiber when the fiber is encapsulated into the substrate. The corresponding relationship is helpful to further optimize packaging design of the fiber cooling system.

Nanoscale-SiC doping for enhancing Jc and Hc2 in superconducting MgB2

NASA Astrophysics Data System (ADS)

Dou, S. X.; Braccini, V.; Soltanian, S.; Klie, R.; Zhu, Y.; Li, S.; Wang, X. L.; Larbalestier, D.

2004-12-01

The effect of nanoscale-SiC doping of MgB2 was investigated in comparison with undoped, clean-limit, and Mg-vapor-exposed samples using transport and magnetic measurements. It was found that there are two distinguishable but related mechanisms that control the critical current-density-field Jc(H ) behavior: increase of upper critical field Hc2 and improvement of flux pinning. There is a clear correlation between the critical temperature Tc, the resistivity ρ, the residual resistivity ratio RRR =R(300K)/R(40K), the irreversibility field H*, and the alloying state in the samples. The Hc2 is about the same within the measured field range for both the Mg-vapor-treated and the SiC-doped samples. However, the Jc(H ) for the latter is higher than the former in a high-field regime by an order of magnitude. Mg vapor treatment induced intrinsic scattering and contributed to an increase in Hc2. SiC doping, on the other hand, introduced many nanoscale precipitates and disorder at B and Mg sites, provoking an increase of ρ(40K ) from 1μΩcm (RRR=15) for the clean-limit sample to 300μΩcm (RRR=1.75) for the SiC-doped sample, leading to significant enhancement of both Hc2 and H * with only a minor effect on Tc. Electron energy-loss spectroscope and transmission electron microscope analysis revealed impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, and BC at a scale below 10nm and an extensive domain structure of 2-4-nm domains in the doped sample, which serve as strong pinning centers.

X-ray Absorption Spectroscopy Study of the Effect of Rh doping in Sr2IrO4

PubMed Central

Sohn, C. H.; Cho, Deok-Yong; Kuo, C.-T.; Sandilands, L. J.; Qi, T. F.; Cao, G.; Noh, T. W.

2016-01-01

We investigate the effect of Rh doping in Sr2IrO4 using X-ray absorption spectroscopy (XAS). We observed appearance of new electron-addition states with increasing Rh concentration (x in Sr2Ir1−xRhxO4) in accordance with the concept of hole doping. The intensity of the hole-induced state is however weak, suggesting weakness of charge transfer (CT) effect and Mott insulating ground states. Also, Ir Jeff = 1/2 upper Hubbard band shifts to lower energy as x increases up to x = 0.23. Combined with optical spectroscopy, these results suggest a hybridisation-related mechanism, in which Rh doping can weaken the (Ir Jeff = 1/2)–(O 2p) orbital hybridisation in the in-planar Rh-O-Ir bond networks. PMID:27025538

Fabrication of ZnO and doped ZnO waveguides deposited by Spin Coating

NASA Astrophysics Data System (ADS)

Mohan, Rosmin Elsa; R, Neha P.; T, Shalu; C, Darshana K.; Sreelatha, K. S.

2015-02-01

In this paper, the synthesis of ZnO and doped Zn1-xAgxO (where x=0.03) nanoparticles by co- precipitation is reported. The precursors used were Zinc Nitrate and Potassium hydroxide pellets. For doping, 3% AgNO3 in ZnNO3 was considered as a separate buffer solution. The prepared nanoparticles were subsequently spin coated onto silica glass substrates at a constant chuck rate of 3000 rpm. The substrate acts as the lower cladding of a waveguide structure. The upper cladding is assumed to be air in the present investigation. The nanostructures of the ZnO powders in the doped and undoped cases were studied using X-ray Diffraction patterns. There was a decrease in the grain size with doping which increase the tunability of the powders to be used as photoluminescent devices. The optical characteristics of the sample were also investigated using UV-Visible spectrophotometer at 200-900 nm wavelengths. The photoluminescence peaks also report a dramatic increase in intensity at the same wavelength for the doped case compared to the undoped one.

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

NASA Astrophysics Data System (ADS)

Naderi, Ali

2017-12-01

In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

Efficient laser operation of Nd3+:Lu2O3 at various wavelengths between 917 nm and 1463 nm

NASA Astrophysics Data System (ADS)

von Brunn, P.; Heuer, A. M.; Fornasiero, L.; Huber, G.; Kränkel, C.

2016-08-01

Even though the first Nd3+-doped sesquioxide lasers have been realized more than 50 years ago, up to now no reports on efficient laser operation of Nd3+:doped sesquioxides can be found. In this work, we review the favorable spectroscopic properties of the sesquioxide Nd3+:Lu2O3 in terms of ground state absorption, stimulated emission, and excited state absorption cross sections as well as the upper level lifetime. Making use of these properties, we achieved efficient laser performance on eight different laser transitions in the wavelength range between 917 nm and 1463 nm under Ti:sapphire laser pumping using state-of-the-art HEM-grown Nd3+:Lu2O3 crystals with good optical quality. At the strongest transition around 1076 nm we determined a slope efficiency of 69%, which represents the highest efficiency ever obtained for a Nd3+-doped sesquioxide. Furthermore, we could generate watt level output powers and high slope efficiencies for seven other transitions. Lasers at 917 nm, 1053 nm, 1108 nm and 1463 nm were realized for the first time and the latter represents one of the longest laser wavelengths obtained on the 4F3/2  →  4I13/2 transition in Nd3+-doped materials.

1 kW peak power passively Q-switched Nd(3+)-doped glass integrated waveguide laser.

PubMed

Charlet, B; Bastard, L; Broquin, J E

2011-06-01

Embedded optical sensors always require more compact, stable, and powerful laser sources. In this Letter, we present a fully integrated passively Q-switched laser, which has been realized by a Ag(+)/Na(+) ion exchange on a Nd(3+)-doped phosphate glass. A BDN-doped cellulose acetate thick film is deposited on the waveguide, acting as an upper cladding and providing a distributed saturable absorption. At λ=1054 nm, the device emits pulses of 1.3 ns FWHM with a repetition rate of 28 kHz. These performances, coupled with the 1 kW peak power, are promising for applications such as supercontinuum generation. © 2011 Optical Society of America

Effects of electron doping on the stability of the metal hydride NaH

NASA Astrophysics Data System (ADS)

Olea-Amezcua, M. A.; Rivas-Silva, J. F.; de la Peña-Seaman, O.; Heid, R.; Bohnen, K. P.

2017-04-01

Alkali and alkali-earth metal hydrides have high volumetric and gravimetric hydrogen densities, but due to their high thermodynamic stability, they possess high dehydrogenation temperatures which may be reduced by transforming these compounds into less stable states/configurations. We present a systematic computational study of the electron doping effects on the stability of the alkali metal hydride NaH substituted with Mg, using the self-consistent version of the virtual crystal approximation to model the alloy Na1-x Mg x H. The phonon dispersions were studied paying special attention to the crystal stability and the correlations with the electronic structure taking into account the zero point energy contribution. We found that substitution of Na by Mg in the hydride invokes a reduction of the frequencies, leading to dynamical instabilities for Mg content of 25%. The microscopic origin of these instabilities could be related to the formation of ellipsoidal Fermi surfaces centered at the L point due to the metallization of the hydride by the Mg substitution. Applying the quasiharmonic approximation, thermodynamic properties like heat capacities, vibrational entropies and vibrational free energies as a function of temperature at zero pressure are obtained. These properties determine an upper temperature for the thermodynamic stability of the hydride, which decreases from 600 K for NaH to 300 K at 20% Mg concentration. This significant reduction of the stability range indicates that dehydrogenation could be favoured by electron doping of NaH.

Hydrostatic pressure-induced huge enhancement of critical current density and flux pinning in Fe1-x Co x Se0.5Te0.5 single crystals

NASA Astrophysics Data System (ADS)

Sang, Lina; Shabbir, Babar; Maheshwari, Pankaj; Qiu, Wenbin; Ma, Zongqing; Dou, Shixue; Cai, Chuanbing; Awana, V. P. S.; Wang, Xiaolin

2018-07-01

We performed a systematic study of the hydrostatic pressure (HP) effect on the supercon-ducting transition temperature (T c), critical current density (J c), irreversibility field (H irr), upper critical field (H c2), and flux pinning mechanism in un-doped and 3 at.% Co-doped FeSe0.5Te0.5 crystals. We found that T c is increased from 11.5 to 17 K as HP increases from 0 to 1.2 GPa. Remarkably, the J c is significantly enhanced by a factor of 3 to 100 for low and high temperature and field, and the H irr line is shifted to higher fields by HP up to 1.2 GPa. Based on the collective pinning model, the δl pinning associated with charge-carrier mean free path fluctuation is responsible for the pinning mechanism of Fe1-x Co x Se0.5Te0.5 samples with or without pressure. A comprehensive vortex phase diagram in the mixed state is constructed and analysed for the 3 at.% Co-doped sample.

Spectral evolution with doping of an antiferromagnetic Mott state

NASA Astrophysics Data System (ADS)

Wu, Huan-Kuang; Lee, Ting-Kuo

2017-01-01

Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted much research attention. There were many theoretical works using different numerical techniques to study this problem, but many have reached different conclusions. One of the reasons is the lack of very detailed high-resolution experimental results for the theories to be compared with. Recently, the scanning tunneling spectroscopy [P. Cai et al., Nat. Phys. 12, 1047 (2016), 10.1038/nphys3840; C. Ye et al., Nat. Commun. 4, 1365 (2013), 10.1038/ncomms2369] on lightly doped Mott insulator with an antiferromagnetic order found the presence of in-gap states with energy of order half an eV above the chemical potential. The measured spectral properties with doping are not quite consistent with earlier theoretical works. Although the experiment has disorder and localization effect, but for the energy scale we will study here, a model without disorder is sufficed to illustrate the underlying physics. We perform a diagonalization method on top of the variational Monte Carlo calculation to study the evolution of antiferromagnetic Mott state with doped hole concentration in the Hubbard model. Our results found in-gap states that behave similarly with ones reported by STS. These in-gap states acquire a substantial amount of dynamical spectral weight transferred from the upper Hubbard band. The in-gap states move toward chemical potential with increasing spectral weight as doping increases. Our result also provides information about the energy scale of these in-gap states in relation with the Coulomb coupling strength U .

Effect of temperature and magnetic field on disorder in semiconductor structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrinskaya, N. V., E-mail: nina.agrins@mail.ioffe.ru; Kozub, V. I.

We present the results of consistent theoretical analysis of various factors that may lead to influence of temperature and external magnetic field on disorder in semiconductor structures. Main attention is paid to quantum well (QW) structures in which only QWs or both QW and barriers are doped (the doping level is assumed to be close to the value corresponding to the metal–insulator transition). The above factors include (i) ionization of localized states to the region of delocalized states above the mobility edge, which is presumed to exist in the impurity band; (ii) the coexistence in the upper and lower Hubbardmore » bands (upon doping of QWs as well as barriers); in this case, in particular, the external magnetic field determines the relative contribution of the upper Hubbard band due to spin correlations at doubly filled sites; and (iii) the contribution of the exchange interaction at pairs of sites, in which the external magnetic field can affect the relation between ferromagnetic and antiferromagnetic configurations. All these factors, which affect the structure and degree of disorder, lead to specific features in the temperature dependence of resistivity and determine specific features of the magnetoresistance. Our conclusions are compared with available experimental data.« less

Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

NASA Astrophysics Data System (ADS)

Shikin, A. M.; Voroshin, V. Yu; Rybkin, A. G.; Kokh, K. A.; Tereshchenko, O. E.; Ishida, Y.; Kimura, A.

2018-01-01

A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.

Atomistic Simulation and Electronic Structure of Lithium Doped Ionic Liquids: Structure, Transport, and Electrochemical Stability

NASA Technical Reports Server (NTRS)

Haskins, Justin B.; Bauschlicher, Charles W.; Lawson, John W.

2015-01-01

Zero-temperature density functional theory (DFT), density functional theory molecular dynamics (DFT-MD), and classical molecular dynamics using polarizable force fields (PFF-MD) are employed to evaluate the influence of Lithium ion on the structure, transport, and electrochemical stability of three potential ionic liquid electrolytes: N--methyl-N-butylpyrrolidinium bis(trifluoromethanesulfonyl)imide ([pyr14][TFSI]), N--methyl-N-propylpyrrolidinium bis(fluorosulfonyl)imide ([pyr13][FSI]), and 1-ethyl-3--methylimidazolium boron tetrafluoride ([EMIM][BF4]). We characterize the Lithium ion solvation shell through zero-temperature DFT simulations of [Li(Anion)sub n](exp n-1) -clusters, DFT-MD simulations of isolated lithium ions in small ionic liquid systems, and PFF-MD simulations with high Li-doping levels in large ionic liquid systems. At low levels of Li-salt doping, highly stable solvation shells having 2-3 anions are seen in both [pyr14][TFSI] and [pyr13][FSI], while solvation shells with 4 anions dominate in [EMIM][BF sub 4]. At higher levels of doping, we find the formation of complex Li-network structures that increase the frequency of 4 anion-coordinated solvation shells. A comparison of computational and experimental Raman spectra for a wide range of [Li(Anion) sub n](exp n -1) - clusters shows that our proposed structures are consistent with experiment. We estimate the ion diffusion coefficients and quantify both size and simulation time effects. We find estimates of lithium ion diffusion are a reasonable order of magnitude and can be corrected for simulation time effects. Simulation size, on the other hand, is also important, with diffusion coefficients from long PFF-MD simulations of small cells having 20-40% error compared to large-cell values. Finally, we compute the electrochemical window using differences in electronic energy levels of both isolated cation/anion pairs and small ionic liquid systems with Li-salt doping. The single pair and liquid-phase systems provide similar estimates of electrochemical window, while Li-doping in the liquid-phase systems results in electrochemical windows little changed from the neat systems. Pure and hybrid functionals systematically provide an upper and lower bound, respectively, to the experimental electrochemical window for the systems studied here.

Hydrothermal preparation of copper doped NaTaO3 nanoparticles and study on the photocatalytic mechanism.

PubMed

Liu, Yulu; Su, Yiguo; Han, Hui; Wang, Xiaojing

2013-02-01

Effects of copper cations doping into wide band gap semiconductor photocatalysts of tantalate on morphology, visible light response, and photocatalytic performance were studied. A series of Cu-doped NaTaO3 catalysts were prepared by hydrothermal method. XRD and XPS results suggested that copper were successfully doped into the NaTaO3 nanocrystal in the Cu2+ state. TEM studies showed the formation of the cube shape nanoparticles of NaTaO3 as well as Cu-doped NaTaO3. UV-Vis diffuse reflectance spectra clearly indicated the red-shift in the series of copper doped NaTaO3 catalysts, resulting in a decrease in the band gap of NaTaO3. The trend of red shift was increased with an increase of copper doping concentration, whereas the photo-degradation methylene blue (MB) is not improved by the doping of copper ions. The simulation of energy band structure by density functional theory unfolded that the substitution of Ta5+ ions by Cu2+ ions results in forming an intermediate band (IB) upper the top of the valence band (VB), which is mainly attributed to the state of Cu 3d. The intermediate band is responsible for the red-shift caused by the doping of Cu ions. Meanwhile Cu species can become the recombination centers of photoinduced electrons and holes. Thus, the quickly recombination of e(-)h(+) pairs is one of the most significant factors which deteriorate the photoactivity of Cu-doped NaTaO3.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-01-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Astrophysics Data System (ADS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-05-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Neutron scattering study of the interplay between structure and magnetism in Ba(Fe1-xCox)2As2

NASA Astrophysics Data System (ADS)

Lester, C.; Chu, Jiun-Haw; Analytis, J. G.; Capelli, S. C.; Erickson, A. S.; Condron, C. L.; Toney, M. F.; Fisher, I. R.; Hayden, S. M.

2009-04-01

Single-crystal neutron diffraction is used to investigate the magnetic and structural phase diagrams of the electron-doped superconductor Ba(Fe1-xCox)2As2 . Heat-capacity and resistivity measurements have demonstrated that Co doping this system splits the combined antiferromagnetic and structural transition present in BaFe2As2 into two distinct transitions. For x=0.025 , we find that the upper transition is between the high-temperature tetragonal and low-temperature orthorhombic structures with (TTO=99±0.5K) and the antiferromagnetic transition occurs at TAF=93±0.5K . We find that doping rapidly suppresses the antiferromagnetism, with antiferromagnetic order disappearing at x≈0.055 . However, there is a region of coexistence of antiferromagnetism and signatures of superconductivity obtained from thermodynamic and transport properties. For all the compositions studied, we find two anomalies in the temperature dependence of the structural Bragg peaks from both neutron scattering and x-ray diffraction at the same temperatures where anomalies in the heat capacity and resistivity have been previously identified. Thus for x=0.025 , where we have shown that the lower anomaly occurs at TAF , we infer that there is strong coupling between the antiferromagnetism and the crystal lattice which may persist to larger x .

NMR study of spin fluctuations and superconductivity in LaFeAsO1-xHx

NASA Astrophysics Data System (ADS)

Fujiwara, Naoki; Sakurai, Ryosuke; Iimura, Soushi; Matsuishi, Satoru; Hosono, Hideo; Yamakawa, Yoichi; Kontani, Hiroshi

2013-03-01

We have performed NMR measurements in LaFeAsO1-xHx, an isomorphic compound of LaFeAsO1-xFx. LaFeAsO1-xHx is most recently known for having double superconducting (SC) domes on H doping. LaFeAsO1-xHx is an electron- doped system, and protons act as H-1 as well as F-1. The first SC dome is very similar between F and H doping, suggesting that H doping supplies the same amount of electrons as F doping. Interestingly, an excess amount of H up to x=0.5 can be replaced with O2-. In the H-overdoped regime (x > 0 . 2), LaFeAsO1-xHx undergoes the second superconducting state. We measured the relaxation rate of LaFeAsO1-xHx for x=0.2 and 0.4, and fond an anomalous electronic state; spin fluctuations measured from 1 /T1 T is enhanced with increasing the doping level from x = 0 . 2 to 0.4. The enhancement of spin fluctuations with increasing carrier doping is a new phenomenon that has not observed in LaFeAsO1-xFx in which the upper limit of the doping level is at most x = 0 . 2 . We will discuss the phenomenon in relation to superconductivity. Grant (KAKENHI 23340101) from the Ministry of Education, Sports and Science, Japan

Structural defects in bulk GaN

NASA Astrophysics Data System (ADS)

Liliental-Weber, Z.; dos Reis, R.; Mancuso, M.; Song, C. Y.; Grzegory, I.; Porowski, S.; Bockowski, M.

2014-10-01

Transmission Electron Microscopy (TEM) studies of undoped and Mg doped GaN layers grown on the HVPE substrates by High Nitrogen Pressure Solution (HNPS) with the multi-feed-seed (MFS) configuration are shown. The propagation of dislocations from the HVPE substrate to the layer is observed. Due to the interaction between these dislocations in the thick layers much lower density of these defects is observed in the upper part of the HNPS layers. Amorphous Ga precipitates with attached voids pointing toward the growth direction are observed in the undoped layer. This is similar to the presence of Ga precipitates in high-pressure platelets, however the shape of these precipitates is different. The Mg doped layers do not show Ga precipitates, but MgO rectangular precipitates are formed, decorating the dislocations. Results of TEM studies of HVPE layers grown on Ammonothermal substrates are also presented. These layers have superior crystal quality in comparison to the HNPS layers, as far as density of dislocation is concern. Occasionally some small inclusions can be found, but their chemical composition was not yet determined. It is expected that growth of the HNPS layers on these substrate will lead to large layer thickness obtained in a short time and with high crystal perfection needed in devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mcdonald, Ross David

The alkali-doped fullerides provide the first example of a transition from a three-dimensional Mott insulator to a superconductor, enabling the effects of both dimensionality and electron correlation on superconductivity to be explored. Chemically the alkali species tunes the superconductivity in the vicinity of the the Mott transition via sample volume. Measuring the relationship between the superconducting transition temperature and upper critical field reveals a crossover from weak- to strong-coupling associated with the dynamical Jahn–Teller effect as the Mott transition is approached. The use of pulsed magnets is required because the upper critical field is enhanced in the vicinity of themore » Mott insulating phase, reaching 90 T for RbxCs3-xC60 — the highest among cubic crystals. This required close collaboration between Prof Kasahara’s group and the Mag Lab to design rf-measurements compatible with sample encapsulation in an inert atmosphere. The concomitant increase of pairing strength with lattice volume near the Mott transition suggest that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity (with high-T C and high-H C2).« less

Upper critical and irreversibility fields in Ni- and Co-doped pnictide bulk superconductors

NASA Astrophysics Data System (ADS)

Nikolo, Martin; Singleton, John; Solenov, Dmitry; Jiang, Jianyi; Weiss, Jeremy; Hellstrom, Eric

2018-05-01

A comprehensive study of upper critical and irreversibility magnetic fields in Ba(Fe0.95Ni0.05)2As2 (large grain and small grain samples), Ba(Fe0.94Ni0.06)2As2, Ba(Fe0.92Co0.08)2As2, and Ba(Fe0.92Co0.09)2As2 polycrystalline bulk pnictide superconductors was made in pulsed fields of up to 65 T. The full magnetic field-temperature (H-T) phase diagrams, starting at 1.5 K, were measured. The higher temperature, upper critical field Hc2 data are well described by the one-band Werthamer, Helfand, and Hohenberg (WHH) model. At low temperatures, the experimental data depart from the fitted WHH curves, suggesting an emergence of a new phase that could be attributed to the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state. The large values of the Maki fitting parameter α indicate that the Zeeman pair breaking dominates over the orbital pair breaking and spin-paramagnetic pair-breaking effect is significant in these materials. Possible multi-band structure of these materials is lumped into effective parameters of the single-band model. Table of measured physical parameters allows us to compare these pnictide superconductors for different Co- and Ni- doping levels and granularity.

Universal intrinsic scale of the hole concentration in high- Tc cuprates

NASA Astrophysics Data System (ADS)

Honma, T.; Hor, P. H.; Hsieh, H. H.; Tanimoto, M.

2004-12-01

We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer Ppl in Y1-xCaxBa2Cu3O6 (Ppl=x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl , S290(Ppl) , of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl=z) . We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the formal valency of Cu . We find two characteristic scaling temperatures, TS* and TS2* , in the TEP versus temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; lower pseudogap temperature defined by the TS* versus Ppl curve and upper pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high- Tc cuprates, Tc depends on the number of layers, therefore, the inter layer coupling, in each individual system.

Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.

PubMed

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Chen, Jie-Zhi; ManduLa, Huhe; Zhang, Yan-Yang; Yang, Shen-Yuan; Jiang, Xiang-Wei

2018-02-21

The effects of the staggered double vacancies, hydrogen (H), 3d transition metals, for example cobalt, and semiconductor covalent atoms, for example, germanium, nitrogen, phosphorus (P) and silicon adsorption on the transport properties of monolayer phosphorene were studied using density functional theory and non-equilibrium Green's function formalism. It was observed that the performance of the phosphorene tunnel field effect transistors (TFETs) with an 8.8 nm scaling channel length could be improved most effectively, if the adatoms or vacancies were introduced at the source channel interface. For H and P doped devices, the upper limit of on-state currents of phosphorene TFETs were able to be quickly increased to 2465 μA μm -1 and 1652 μA μm -1 , respectively, which not only outperformed the pristine sample, but also met the requirements for high performance logic applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS). It was proved that the defect-induced band gap states make the effective tunneling path between the conduction band (CB) and valence band (VB) much shorter, so that the carriers can be injected easily from the left electrode, then transfer to the channel. In this regard, the tunneling properties of phosphorene TFETs can be manipulated using surface defects. In addition, the effects of spin polarization on the transport properties of doped phosphorene TFETs were also rigorously considered, H and P doped TFETs could achieve a high ON current of 1795 μA μm -1 and 1368 μA μm -1 , respectively, which is closer to realistic nanodevices.

An in situ vapour phase hydrothermal surface doping approach for fabrication of high performance Co3O4 electrocatalysts with an exceptionally high S-doped active surface.

PubMed

Tan, Zhijin; Liu, Porun; Zhang, Haimin; Wang, Yun; Al-Mamun, Mohammad; Yang, Hua Gui; Wang, Dan; Tang, Zhiyong; Zhao, Huijun

2015-04-04

A facile in situ vapour phase hydrothermal (VPH) surface doping approach has been developed for fabrication of high performance S-doped Co3O4 electrocatalysts with an unprecedentedly high surface S content (>47%). The demonstrated VPH doping approach could be useful for enrichment of surface active sites for other metal oxide electrocatalysts.

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

DOE PAGES

Si, W.; Zhang, C.; Wu, L.; ...

2015-09-01

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Si, Weidong, E-mail: wds@bnl.gov, E-mail: qiangli@bnl.gov; Zhang, Cheng; Wu, Lijun

2015-08-31

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF{sub 2} crystalline substrates, respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. Withmore » large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

2009-01-01

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

Ultra-low specific on-resistance 700V LDMOS with a buried super junction layer

NASA Astrophysics Data System (ADS)

Wang, Hai-Shi; Li, Zhi-you; Li, Ke; Qiao, Ming

2018-01-01

An ultra-low specific on-resistance 700 V lateral double-diffused MOSFET (LDMOS) with a buried super junction (BSJ) layer is proposed. [1-9] Buried P-pillars in the LDMOS can be depleted by neighboring N-pillars, overlying and underlying N-drift regions simultaneously, thus allowing a higher doping concentration. Consequently, the doping concentration of either the N-drift regions or N-pillars, or both, may also be increased therewith to compensate the surplus charges in the P-pillars. Compared with conventional surface super junction (SSJ) LDMOS, in which the super junction layer is implemented at the upper surface of the drift region, and P-pillars can only be depleted by the adjacent N-pillars and the N-drift regions beneath, the proposed novel LDMOS structure may have a lower specific on-resistance (Ron,sp) while maintain the same breakdown voltage (BV). Simulation results indicate that the Ron,sp of the novel structure is only 80.5 mΩ cm2 with a high BV of 750 V, which is reduced by 17% in comparison with the Ron,sp of a conventional SSJ LDMOS.

Electrical properties of lightly Ga-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Alagha, S.; Heedt, S.; Vakulov, D.; Mohammadbeigi, F.; Senthil Kumar, E.; Schäpers, Th; Isheim, D.; Watkins, S. P.; Kavanagh, K. L.

2017-12-01

We investigated the growth, crystal structure, elemental composition and electrical transport characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in the UV-range. Nominally-undoped and Ga-doped ZnO nanowires were grown by metal-organic chemical vapor deposition. Photoluminescence measurements confirmed the incorporation of Ga via donor-bound exciton emission. With atom-probe tomography we estimated an upper limit of the Ga impurity concentration ({10}18 {{cm}}-3). We studied the electrical transport characteristics of these nanowires with a W-nanoprobe technique inside a scanning electron microscope and with lithographically-defined contacts allowing back-gated measurements. An increase in apparent resistivity by two orders of magnitude with decreasing radius was measured with both techniques with a much larger distribution width for the nanoprobe method. A drop in the effective carrier concentration and mobility was found with decreasing radius which can be attributed to carrier depletion and enhanced scattering due to surface states. Little evidence of a change in resistivity was observed with Ga doping, which indicates that the concentration of native or background dopants is higher than the Ga doping concentration.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

NASA Astrophysics Data System (ADS)

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice.

PubMed

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-14

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN) 5 /(GaN) 1 superlattice (SL) in Al 0.83 Ga 0.17 N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as Mg Ga δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using Mg Ga δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

Hyperbolic cooling of graphene Zener-Klein transistors

NASA Astrophysics Data System (ADS)

Yang, Wei; Berthou, Simon; Lu, Xiaobo; Baudin, Emmanuel; Wilmart, Quentin; Denis, Anne; Rosticher, Michael; Taniguchi, Takashi; Watanabe, Kenji; Feve, Gwendal; Berroir, Jean-Marc; Zhang, Guangyu; Voisin, Christophe; Placais, Bernard

Engineering of cooling mechanisms is a bottleneck in nanoelectroniscs. In graphene/hBN transistors, Wiedemann-Frantz cooling and supercollision-cooling prevails, and the latter is suppressed in high mobility graphene/hBN samples and substituted by the super-Planckian radiation of hyperbolic phonon-polaritons (HPPs) in the hBN substrate. Using electrical Joule heating and sensitive noise thermometry in several GHz range we report on prevailing HPP cooling in the upper Reststrahlen-band of hBN at high bias. We predict and observe its activation threshold, along with interband Zener-Klein tunneling. HPP cooling is able to evacuate at least several GW/m2 to the bottom gate, resulting in an unusual clipping of electronic temperature. As a scattering counterpart, HPPs of the lower Reststrahlen-band control current saturation at high doping. The combination of both mechanisms promotes graphene/hBN as a valuable nanotechnology for applications in the high power devices and radio frequency electronics.

Charge compensation mechanisms in favor of the incorporation of the Eu3+ ion into the ZnO host lattice

NASA Astrophysics Data System (ADS)

Baira, M.; Bekhti-Siad, A.; Hebali, K.; Bouhani-Benziane, H.; Sahnoun, M.

2018-05-01

Eu3+ doped phosphors with charge compensation are potential candidates of red emitting phosphors for lamp applications. Charge compensation improves the luminescence performance of the material. The charge compensation can most probably be achieved by three possible mechanisms: (a) two Zn2+ ions are replaced by one Eu3+ ions and one monovalent cation, 2Zn2+ →Eu3++ Li+, where Li+ is acting as a charge compensator; (b) the charge compensation is provided by a zinc vacancy (VZn) defects, 3Zn2+ → 2Eu3++ VZn, the subscript Zn denotes an ion in a normal zinc site in the lattice; (c) two Zn2+ ions are replaced by one Eu3+ ions with the presence of interstitial oxygen (Oi), 2Zn2+ → 2Eu3++ Oi. Electronic structures of the crystals corresponding to the three models are evaluated by the first-principles quantum mechanical calculations based on the density functional theory. It is found that the charge compensator defects make Eu3+ doping in ZnO energetically more favorable. They break the local symmetry around the Eu3+ ion and lead to deep states below the empty upper band, the conduction band that could facilitate intra-4f shell transitions, which can obviously improve the emission intensity of Eu3+-doped ZnO. Therefore, the effect of these defects on the host crystals electronic band states relative to the Eu3+ states is reported, since both electron transfer and electronically energy transfer processes enhance the performance of optoelectronic devices based on this material. These theoretical insights are helpful for designing rare-earth doped oxide materials with high photoluminescence (PL) performance.

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

NASA Astrophysics Data System (ADS)

Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

2017-07-01

4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

PubMed Central

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-01-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN. PMID:28290480

Bismuth doping strategies in GeTe nanowires to promote high-temperature phase transition from rhombohedral to face-centered cubic structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jie; Huang, Rong; Wei, Fenfen

2014-11-17

The phase transition of Bi-doped (∼3 at. %) GeTe nanowires from a rhombohedral (R) to a face-centered cubic (C) structure was observed in in situ high-temperature X-ray diffraction. The promotion of high-temperature R-C phase transition by a doping approach was revealed. Ab initio energy calculations of doped GeTe at various Bi doping concentrations were performed to interpret the promoted temperature-induced phase transitions. Those results indicated that the total energy differences between R and C structures of doped GeTe decreased as Bi doping concentrations increased, which facilitated R-C phase transitions.

PULSION® HP: Tunable, High Productivity Plasma Doping

NASA Astrophysics Data System (ADS)

Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

2011-01-01

Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism—deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

PubMed

Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

2015-05-05

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

NASA Astrophysics Data System (ADS)

Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

2015-05-01

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

Stable iodide doping induced by photonic curing for carbon nanotube transparent conductive films

NASA Astrophysics Data System (ADS)

Wachi, Atsushi; Nishikawa, Hiroyuki; Zhou, Ying; Azumi, Reiko

2018-06-01

Doping has become crucial for achieving stable and high-performance conductive transparent carbon nanotube (CNT) films. In this study, we systematically investigate the doping effects of a few materials including alkali metal iodides, nonmetal iodide, and metals. We demonstrate that photonic curing can enhance the doping effects, and correspondingly improve the conductivity of CNT films, and that such iodides have better doping effects than metals. In particular, doping with a nonmetal compound (NH4I) shows the largest potential to improve the conductivity of CNT films. Typically, doping with metal iodides reduces the sheet resistance (R S) of CNT films with 70–80% optical transmittances at λ = 550 nm from 600–2400 to 250–440 Ω/square, whereas doping with NH4I reduces R S to 57 and 84 Ω/square at 74 and 84% optical transmittances, respectively. Interestingly, such a doped CNT film exhibits only a slight increase in sheet resistance under an extreme environment of high temperature (85 °C) and high relative humidity (85%) for 350 h. The results suggest that photonic-curing-induced iodide doping is a promising approach to producing high-performance conductive transparent CNT films.

Highly improved sensibility and selectivity ethanol sensor of mesoporous Fe-doped NiO nanowires

NASA Astrophysics Data System (ADS)

Li, X. Q.; Wei, J. Q.; Xu, J. C.; Jin, H. X.; Jin, D. F.; Peng, X. L.; Hong, B.; Li, J.; Yang, Y. T.; Ge, H. L.; Wang, Xinqing

2017-12-01

In this paper, nickel oxides (NiO) and iron (Fe)-doped NiO nanowires (NWs) with the various doping content (from 1 to 9 at%) were synthesized by using SBA-15 templates with the nanocasting method. All samples were synthesized in the same conditions and exhibited the same mesoporous-structures, uniform diameter, and defects. Mesoporous-structures with high surface area created more active sites for the adsorption of oxygen on the surface of all samples, resulting in the smaller surface resistance in air. The impurity energy levels from the donor Fe-doping provided electrons to neutralize the holes of p-type Fe-doped NiO NWs, which greatly enhanced the total resistance. The comparative gas-sensing study between NiO NWs and Fe-doped NiO NWs indicated that the high-valence donor Fe-doping obviously improved the ethanol sensitivity and selectivity for Fe-doped NiO NWs. And Ni0.94Fe0.06O1.03 NWs sensor presented the highest sensitivity of 14.30 toward ethanol gas at 320 °C for the high-valence metal-doping.

Co and Fe doping effect on negative temperature coefficient characteristics of nano-grained NiMn2O4 thick films fabricated by aerosol-deposition.

PubMed

Ryu, Jungho; Han, Guifang; Lee, Jong-Pil; Lim, Dong-Soo; Park, Yun-Soo; Jeong, Dae-Yong

2013-05-01

Spinel structured highly dense NiMn2O4-based (NMO) negative temperature coefficient (NTC) thermistor thick films were fabricated by aerosol-deposition at room temperature. To enhance the thermistor B constant, which represents the temperature sensitivity of the NMO thermistor material, Co and Co-Fe doping was applied. In the case of single element doping of Co, 5 mol% doped NMO showed a high B constant of over 5000 K, while undoped NMO showed -4000 K. By doping Fe to the 5 mol% Co doped NMO, the B constant was more enhanced at over 5600 K. The aging effect on the NTC characteristics of Co doped and Fe-Co co-doped NMO thick film showed very stable resistivity-time characteristics because of the highly dense microstructure.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

2017-07-01

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Spectral Properties of Er3+/Tm3+ Co-Doped ZBLAN Glasses and Fibers

PubMed Central

Liao, Xili; Jiang, Xiaobo; Yang, Qiuhong; Wang, Longfei; Chen, Danping

2017-01-01

A series of Er3+/Tm3+ co-doped fluoride (ZBLAN) glasses and fibers was prepared and their fluorescence spectra was measured under excitation at 793 nm and 980 nm. Correlation between the self-absorption effect of rare-earth ions and the shift of the emission peak was investigated. With the increasing length of fiber, the emission peaks red-shift when self-absorption occurs at the upper level of emission transition or blue-shift when that occurs at the lower level. As a result of the strong self-absorption effect, Er3+/Tm3+ co-doped fibers mainly yield 1390–1470, 1850–1980, and 2625–2750 nm emissions when excited at 793 nm, and 1480–1580, 1800–1980, and 2625–2750 nm emissions when excited at 980 nm. Further, a broadband emission in the range of 1410–1580 nm covering the S + C communication band was obtained by the dual-pumping scheme of 793 nm and 980 nm. Results suggest that the dual-pumping scheme would be more effective and important for an Er3+/Tm3+ co-doped fiber amplifier working in the S + C communication band. PMID:28772846

Spectral Properties of Er3+/Tm3+ Co-Doped ZBLAN Glasses and Fibers.

PubMed

Liao, Xili; Jiang, Xiaobo; Yang, Qiuhong; Wang, Longfei; Chen, Danping

2017-05-03

A series of Er 3+ /Tm 3+ co-doped fluoride (ZBLAN) glasses and fibers was prepared and their fluorescence spectra was measured under excitation at 793 nm and 980 nm. Correlation between the self-absorption effect of rare-earth ions and the shift of the emission peak was investigated. With the increasing length of fiber, the emission peaks red-shift when self-absorption occurs at the upper level of emission transition or blue-shift when that occurs at the lower level. As a result of the strong self-absorption effect, Er 3+ /Tm 3+ co-doped fibers mainly yield 1390-1470, 1850-1980, and 2625-2750 nm emissions when excited at 793 nm, and 1480-1580, 1800-1980, and 2625-2750 nm emissions when excited at 980 nm. Further, a broadband emission in the range of 1410-1580 nm covering the S + C communication band was obtained by the dual-pumping scheme of 793 nm and 980 nm. Results suggest that the dual-pumping scheme would be more effective and important for an Er 3+ /Tm 3+ co-doped fiber amplifier working in the S + C communication band.

Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis.

PubMed

Sekulic, Damir; Tahiraj, Enver; Zvan, Milan; Zenic, Natasa; Uljevic, Ognjen; Lesnik, Blaz

2016-12-01

Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females) involved in volleyball (n = 77), soccer (n = 163), basketball (n = 114) and handball (n = 103). Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports.

Self-compensation of thermal lens in high-power diode pumped solid-state lasers

NASA Astrophysics Data System (ADS)

Wang, Xiao-Jun

2010-02-01

We present a comprehensive model to describe the optic-thermal coupling in the diode pumped solid-state lasers (DPSSL). The thermal transition of particles at the upper laser level leads the heat-generation of laser crystals to depend on shape of the laser beam, while the laser field is also influenced by the temperature because of the thermal excitation of doped particles among various Stark levels. These effects, together with the usual thermal-optic effect that induces a fluctuation of the refraction index by an inhomogeneous temperature distribution, cause a complicated coupling between the laser field and the temperature field. We show that the optic-thermal coupling plays an important role in high-power DPSSL with larger size beam. That effect may yield a self-compensation for the thermal lens and improve the beam quality.

Research and Development of High Energy 2 - Micron Lasers Based on TM: Doped Ceramic Laser Gain Media and TM: Doped Optical Fibers

DTIC Science & Technology

2016-07-20

AFRL-AFOSR-VA-TR-2016-0257 RESEARCH AND DEVELOPMENT OF HIGH ENERGY 2 - MICRON LASERS BASED ON TM: DOPED CERAMIC LASER GAIN MEDIA AND TM: DOPED...2010 to 01/03/2016 4. TITLE AND SUBTITLE RESEARCH AND DEVELOPMENT OF HIGH ENERGY 2 - MICRON LASERS BASED ON TM: DOPED CERAMIC LASER GAIN MEDIA AND...NOTES 14. ABSTRACT Our research and development of 2-μm femtosecond lasers has included development of mode-locked Tm:fiber lasers , super-continuum

Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio

2015-10-15

Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy.more » The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.« less

Spin-Orbital entangled 2DEG in the δ-doped interface LaδSr2IrO4: Density-Functional Studies and Transport Results from Boltzmann Equations

NASA Astrophysics Data System (ADS)

Bhandari, Churna; Popovic, Zoran; Satpathy, Sashi

The strong spin-orbit coupled iridates are of considerable interest because of the Mottminsulating state,which is produced by the combined effect of a strong spin-orbit coupling (SOC) and Coulomb repulsion. In this work, using density-functional methods, we predict the existence of a spin-orbital entangled two dimensional electron gas (2DEG) in the delta-doped structure, where a single SrO layer is replaced by an LaO layer. In the bulk Sr2IrO4, a strong SOC splits the t2 g states into Jeff = 1 / 2 and 3 / 2 states. The Coulomb repulsion further splits the half-filled Jeff = 1 / 2 bands into a lower and an upper Hubbard band (UHB) producing a Mott insulator. In the δ-doped structure, La dopes electrons into the UHB, and our results show that the doped electrons are strongly localized in one or two Ir layers at the interface, reminiscent of the 2DEG in the well-studied LaAlO3/SrTiO3 interface. The UHB, consisting of spin-orbit entangled states, is partially filled, resulting in a spin-orbital entangled 2DEG. Transport properties of the 2DEG shows many interesting features, which we study by solving the semi-classical Boltzmann transport equation in the presence of the magnetic and electric fields.

Highly Tm3+ doped germanate glass and its single mode fiber for 2.0 μm laser

PubMed Central

Wen, Xin; Tang, Guowu; Yang, Qi; Chen, Xiaodong; Qian, Qi; Zhang, Qinyuan; Yang, Zhongmin

2016-01-01

Highly Tm3+ doped optical fibers are urgently desirable for 2.0 μm compact single-frequency fiber laser and high-repetition-rate mode-locked fiber laser. Here, we systematically investigated the optical parameters, energy transfer processes and thermal properties of Tm3+ doped barium gallo-germanate (BGG) glasses. Highly Tm3+ doped BGG glass single mode (SM) fibers were fabricated by the rod-in-tube technique. The Tm3+ doping concentration reaches 7.6 × 1020 ions/cm3, being the reported highest level in Tm3+ doped BGG SM fibers. Using ultra short (1.6 cm) as-drawn highly Tm3+ doped BGG SM fiber, a single-frequency fiber laser at 1.95 μm has been demonstrated with a maximum output power of 35 mW when in-band pumped by a home-made 1568 nm fiber laser. Additionally, a multilongitudinal-mode fiber laser at 1.95 μm has also been achieved in a 10 cm long as-drawn active fiber, yielding a maximum laser output power of 165 mW and a slope efficiency of 17%. The results confirm that the as-drawn highly Tm3+ doped BGG SM fibers are promising in applications that require high gain and high power from a short piece of active optical fiber. PMID:26828920

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

NASA Astrophysics Data System (ADS)

Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

2017-11-01

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

Differential analysis of the doping behaviour templates in three types of sports.

PubMed

Rodek, Jelena; Idrizović, Kemal; Zenić, Natasa; Perasović, Benjamin; Kondric, Miran

2013-05-01

Conducted researches recognize various risk factors, as well as protective factors against doping behaviour in different sports i.e. sports disciplines or activities. The main goal of this research was to identify the correlation between selected socio-demographic, health-related, and sports-related predictors with doping factors in three different types of sports, which are (1) highly energetic demanding sports (weightlifting), (2) highly technical demanding sports (racquet sports), and (3) highly tactical demanding sports (sailing). The research consisted of three separate studies, each one of them researching one of the sports. The sample of subjects included altogether 293 athletes, senior level competitors (older than 18years of age). In total, the sample comprised three homogenous sub-samples, as follows: athletes in highly energetic demanding sports (weightlifters and power lifters; N=27), athletes in highly technical demanding sports (table tennis, tennis and badminton players; N=188), and athletes in highly tactical demanding sports (sailing; N=78). The first study involved weightlifters where we should point out the existence of high doping behaviour In this study, religiousness was interpreted as the most significant protective factor against doping behaviour, while sports factors are not found to be significantly related to doping. The study involving racquet sport athletes suggests a high risk of doping behaviour among those athletes who observe doping behaviour in their sport. We noticed low levels of athletes' trust in their coaches' and physicians' opinions on doping issues. This is an issue which should be researched in the future, because the underlying cause has not been studied as yet. Briefly, it seems that either the athletes are not convinced of their coaches '/physicians' expertise regarding doping issues, and/or they do not believe in their good intentions. It is particularly important, as the previous research has shown that with the increased trust in coaches and physicians, the chance that an athlete will use doping decreases. As expected, it is characteristic for sailing that it has a low likelihood of potential doping behaviour, although the consumption of dietary supplements is high. Substance abuse in sports spreads beyond those that enhance athletic performance. All of these issues should be studied in more detail in the future and, if appropriately validated, incorporated into anti-doping intervention programs.

Fabrication and characterization of a phosphosilicate YDF with high Yb absorbance and low background loss

NASA Astrophysics Data System (ADS)

Kim, Seong-Jin; Hujimaki, Yosuke; Taniguchi, Hirokazu; Kinoshita, Hiroaki; Sato, Kenji

2014-03-01

In this paper, we report fabrication and investigation of ytterbium-doped phosphorsilicate fiber (P co-doped YDF) with high Yb content, low numerical aperture, and low background loss. The P co-doped YDF is fabricated by MCVD using the vapor sources of Yb, SiCl4, AlCl3, and POCl3, and by the gas-phase doping method. The optical properties of this P co-doped YDF are compared with Al co-doped and Al:P co-doped YDFs with low background losses. The minimum background loss of the P co-doped YDF in the spectral range from 1100 to 1380 nm is as low as ~3 dB/km. This is nearly independent of the Yb and P contents because soot deposition and collapsing conditions are properly optimized (i.e., the P co-doped YDF from a non-optimized process shows a few hundred dB/km). The excess loss induced by PD, for the P co-doped YDF, was dramatically reduced compared to both Al co-doped and Al:P co-doped YDFs. The optical slope efficiency of the P co-doped YDF is about 80%, depending on the pumping wavelength and fiber length. The fiber colors during pumping are blue for both the P co-doped and Al:P co-doped YDFs. Based on the results from a prolonged test, the output power of the P co-doped YDF is highly stable, with an initial degradation of 2-3%; which demonstrate improvement in PD resistivity with P incorporation into the glass, compared to the Al:P co-doped YDF with degradation above 6%.

The Prevalence and Covariates of Potential Doping Behavior in Kickboxing; Analysis among High-Level Athletes

PubMed Central

Sekulic, Damir; Zenic, Natasa; Versic, Sime; Maric, Dora; Gabrilo, Goran; Jelicic, Mario

2017-01-01

Abstract The official reports on doping behavior in kickboxing are alarming, but there have been no empirical studies that examined this problem directly. The aim of this study was to investigate the prevalence, gender differences and covariates of potential-doping-behavior, in kickboxing athletes. A total of 130 high-level kickboxing athletes (92 males, 21.37 ± 4.83 years of age, 8.39 ± 5.73 years of training experience; 38 women, 20.31 ± 2.94 years of age; 9.84 ± 4.74 years of training experience) completed questionnaires to study covariates and potential-doping behavior. The covariates were: sport factors (i.e. experience, success), doping-related factors (i.e. opinion about penalties for doping users, number of doping testing, potential-doping-behavior, etc.), sociodemographic variables, task- and ego-motivation, knowledge on sports nutrition, and knowledge on doping. Gender-based differences were established by independent t-tests, and the Mann-Whitney test. Multinomial logistic regression analyses were performed to define the relationships between covariates and a tendency toward potential-doping behavior (positive tendency – neutral – negative tendency). The potential-doping behavior was higher in those athletes who perceived kickboxing as doping contaminated sport. The more experienced kickboxers were associated with positive intention toward potential-doping behavior. Positive intention toward potential-doping behavior was lower in those who had better knowledge on sports nutrition. The task- and ego-motivation were not associated to potential-doping behavior. Because of the high potential-doping-behavior (less than 50% of athletes showed a negative tendency toward doping), and similar prevalence of potential-doping behavior between genders, this study highlights the necessity of a systematic anti-doping campaign in kickboxing. Future studies should investigate motivational variables as being potentially related to doping behavior in younger kickboxers. PMID:29134049

Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)

NASA Astrophysics Data System (ADS)

Tu, Charng-Gan; Chen, Hao-Tsung; Chen, Sheng-Hung; Chao, Chen-Yao; Kiang, Yean-Woei; Yang, Chih-Chung

2017-02-01

In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to <5%) is about 10 nm. The memory time of Mg in the growth chamber is about 60 min, after which the Mg doping concentration is reduced to <1%.

NEUTRON SCATTERING STUDY OF THE HIGH-Tc SUPERCONDUCTING SYSTEM YBa2Cu3O6+x

NASA Astrophysics Data System (ADS)

Rossat-Mignod, J.; Regnault, L. P.; Bourges, P.; Burlet, P.; Vettier, C.; Henry, J. Y.

The following sections are included: * Introduction * The neutron scattering technique * Phase diagrams of high-Tc superconductors * The undoped AF-doped * The doped AF-state * The weakly-doped metallic state * The heavily-doped metallic state * The overdoped metallic state * Discussion and concluding remarks * Acknowledgements * References

L-lactic acid and sodium p-toluenesulfonate co-doped polypyrrole for high performance cathode in sodium ion battery

NASA Astrophysics Data System (ADS)

Liao, Qishu; Hou, Hongying; Liu, Xianxi; Yao, Yuan; Dai, Zhipeng; Yu, Chengyi; Li, Dongdong

2018-04-01

In this work, polypyrrole (PPy) was co-doped with L-lactic acid (LA) and sodium p-toluenesulfonate (TsONa) for high performance cathode in sodium ion battery (SIB) via facile one-step electropolymerization on Fe foil. The as-synthesized LA/TsONa co-doped PPy cathode was investigated in terms of scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), galvanostatic charge/discharge and cyclic voltammetry (CV). The results suggested that some oval-bud-like LA/TsONa co-doped PPy particles did form and tightly combine with the surface of Fe foil; furthermore, LA/TsONa co-doped PPy cathode also delivered higher electrochemical performances than TsONa mono-doped PPy cathode. For example, the initial specific discharge capacity was as high as about 124 mAh/g, and the reversible specific capacity still maintained at about 110 mAh/g even after 50 cycles, higher than those of TsONa mono-doped PPy cathode. The synergy effect of multi components of LA/TsONa co-doped PPy cathode should be responsible for high electrochemical performances.

Highly tunable magnetism in silicene doped with Cr and Fe atoms under isotropic and uniaxial tensile strain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Rui; Ni, Jun, E-mail: junni@mail.tsinghua.edu.cn; Collaborative Innovative Center of Quantum Matter, Beijing 100084

2015-12-28

We have investigated the magnetic properties of silicene doped with Cr and Fe atoms under isotropic and uniaxial tensile strain by the first-principles calculations. We find that Cr and Fe doped silicenes show strain-tunable magnetism. (1) The magnetism of Cr and Fe doped silicenes exhibits sharp transitions from low spin states to high spin states by a small isotropic tensile strain. Specially for Fe doped silicene, a nearly nonmagnetic state changes to a high magnetic state by a small isotropic tensile strain. (2) The magnetic moments of Fe doped silicene also show a sharp jump to ∼2 μ{sub B} at amore » small threshold of the uniaxial strain, and the magnetic moments of Cr doped silicene increase gradually to ∼4 μ{sub B} with the increase of uniaxial strain. (3) The electronic and magnetic properties of Cr and Fe doped silicenes are sensitive to the magnitude and direction of the external strain. The highly tunable magnetism may be applied in the spintronic devices.« less

Plasmons in Dimensionally Mismatched Coulomb Coupled Graphene Systems.

PubMed

Badalyan, S M; Shylau, A A; Jauho, A P

2017-09-22

We calculate the plasmon dispersion relation for Coulomb coupled metallic armchair graphene nanoribbons and doped monolayer graphene. The crossing of the plasmon curves, which occurs for uncoupled 1D and 2D systems, is split by the interlayer Coulomb coupling into a lower and an upper plasmon branch. The upper branch exhibits an unusual behavior with end points at finite q. Accordingly, the structure factor shows either a single or a double peak behavior, depending on the plasmon wavelength. The new plasmon structure is relevant to recent experiments, its properties can be controlled by varying the system parameters and be used in plasmonic applications.

In-situ infrared spectra of OH in rutile up to 1000 °C

NASA Astrophysics Data System (ADS)

Guo, Haihao

2017-09-01

The infrared spectra of hydrous, oriented single crystals of synthetic Al-doped and pure rutile were measured from room temperature to 1000 °C at 1 bar using a heating stage. At room temperature, the spectra show only one band at 3278 cm-1 in pure rutile, and two additional bands at 3303 and 3323 cm-1 in Al-doped rutile. The main band associated with Al at 3323 cm-1 loses intensity as temperature increases and nearly disappears already at 300 °C. This suggests that the corresponding defect only forms during cooling and, therefore, water speciation in rutile at room temperature is not representative of subduction zone or upper mantle conditions. All OH bands shift to lower wavenumbers at elevated temperatures with dν/d T = -0.0831 cm-1 K-1 for the main band at 3278 cm-1. This strong low-frequency shift is unexpected for an OH bond involved in hydrogen bonding, indicating decreasing O-O distance for the OH band. Together with the extreme broadening of the band at high temperature, it suggests some weakening of the OH bond strength and a rapid exchange of protons, consistent with rapid hydrogen diffusion in rutile.

Ultra High p-doping Material Research for GaN Based Light Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Dmitriev

2007-06-30

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.« less

Enhancement of Hc2 and Jc by carbon-based chemical doping

NASA Astrophysics Data System (ADS)

Yeoh, W. K.; Dou, S. X.

2007-06-01

In the past 5 years, various kinds of doping of MgB 2, including single elements (metal and non-metal), silicates, various carbon sources, and other compounds have been investigated and reported. Most nanoparticle doping leads to improvement of critical current density, Jc( H), and performance, but some types show a negative effect. In this paper, the effect of carbon doping on Jc and the upper critical field, Hc2, of MgB 2 is reviewed. Carbon substitution effects make two distinguishable contributions to the enhancement of Jc field performance: increase of Hc2 and improvement of flux pinning, both because carbon substitutes for boron in the MgB 2 lattice. Among all the carbon sources so far, nano-SiC has been confirmed to be the most effective dopant to enhance the Jc in magnetic fields and Hc2. An irreversibility field, Hirr, of 10 T has been achieved with nano-SiC doping at 20 K, exceeding Hirr of NbTi at 4.2 K. Besides that, Hc2 of carbon alloyed MgB 2 film has reached the value of 71 T. The significant enhancement in Jc( H) and Hc2 via carbon substitution has provided great potential for practical applications of MgB 2. The dual reaction model proposed by the authors’ group provides a comprehensive understanding of the mechanism of enhancement in Jc and Hc2 by chemical doping. Further improvement in self-field Jc performance while maintaining the already achieved in-field performance remains as a major challenge in the development of MgB 2.

Sport Nutrition and Doping in Tennis: An Analysis of Athletes’ Attitudes and Knowledge

PubMed Central

Kondric, Miran; Sekulic, Damir; Uljevic, Ognjen; Gabrilo, Goran; Zvan, Milan

2013-01-01

Nutrition and doping issues are rarely studied in the sport of tennis. The aims of this investigation were to determine knowledge on doping (KD) and knowledge on sport nutrition (KSN), and corresponding socio-demographic-, sport-, and sport-nutrition- and doping-factors among an international sample of high-level tennis players of both sexes (43 females; 22 years old on average). In the first phase of the investigation, the KSN and KD questionnaires were studied for their reliability and validity. The consumption of NS is found to be very high, with almost of all the females and 80% of the males using NS at least occasionally. The athletes showed a low tendency regarding future doping usage, although most of them are convinced that doping does exist in tennis. Since athletes declared that their coaches are their main source of information about NS and doping, future studies should investigate what coaches actually know about such problems. KSN has been found to be protective against potential doping behavior in the future. Males are found to be more prone to doping than females. Therefore, in order to prevent doping behavior in tennis we strongly suggest intensive educational programs on sports nutrition and doping-related problems. Key Points The incidence of nutritional supplementation use among the tennis players is found to be very high, especially among the females. Although most of the subjects are of the opinion that the doping behavior is present in tennis circuit, we have found a low tendency regarding future doping usage, and high levels of athletes’ trust in their coaches with regard to nutritional supplementation and doping. There are indices that the knowledge about nutrition is protective factor against potential doping behavior. It clearly reinforces the need to include a wide educational program on sports nutrition in tennis, but also in other sports. PMID:24149808

Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

NASA Astrophysics Data System (ADS)

Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

2018-02-01

Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

Strong coupling diagram technique for the three-band Hubbard model

NASA Astrophysics Data System (ADS)

Sherman, A.

2016-03-01

Strong coupling diagram technique equations are derived for hole Green’s functions of the three-band Hubbard model, which describes Cu-O planes of high-Tc cuprates. The equations are self-consistently solved in the approximation, in which the series for the irreducible part in powers of the oxygen-copper hopping constant is truncated to two lowest-order terms. For parameters used for hole-doped cuprates, the calculated energy spectrum consists of lower and upper Hubbard subbands of predominantly copper nature, oxygen bands with a small admixture of copper states and the Zhang-Rice states of mixed nature, which are located between the lower Hubbard subband and oxygen bands. The spectrum contains also pseudogaps near transition frequencies of Hubbard atoms on copper sites.

Delta Doping High Purity CCDs and CMOS for LSST

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Nikzad, Shouleh; Hoenk, Michael; Elliott, S. Tom; Bebek, Chris; Holland, Steve; Kolbe, Bill

2006-01-01

A viewgraph presentation describing delta doping high purity CCD's and CMOS for LSST is shown. The topics include: 1) Overview of JPL s versatile back-surface process for CCDs and CMOS; 2) Application to SNAP and ORION missions; 3) Delta doping as a back-surface electrode for fully depleted LBNL CCDs; 4) Delta doping high purity CCDs for SNAP and ORION; 5) JPL CMP thinning process development; and 6) Antireflection coating process development.

A study of spin fluctuations and superconductivity in the iron pnictides

NASA Astrophysics Data System (ADS)

Gooch, Melissa J.

In early 2008, Hosono's group published results of their discovery of an iron-based layered superconductor, LaFeAsO1-- xFx (x = 0.11). Their discovery gave new life to condensed matter research, being that it was the first high Tc layered superconductor since the discovery of the cuprates. Within only- a few short months, three additional structures were added to the iron pnictide family. The pnictides share a similar layered structure to that of the cuprates, which sparked questions about what role charge doping plays in the superconductivity of the pnictides. An ideal candidate to investigate the physical properties as the doping varies is KxSr1--xFe 2As2, which forms a solid solution for 0 ≤ x ≤ 1. Upper critical fields, HC2, were investigated for select polycrystalline samples and revealed high HC 2 varies upwards to ˜ 100 T. Pressure measurements revealed similar doping dependent pressure coefficients to the cuprates; however, for the cuprates there is a well understood charge transfer that is induced with the application of pressure. This is not the case for the pnictides where a suppression of the magnetic fluctuations is seen. Resistivity and thermoelectric power measurements provide evidence for a possible hidden magnetic quantum critical point (MQCP). The effects of the MQCP extend up to ˜ 150K and were also seen for K xBa1--xFe 2As2, this suggests that magnetic spin fluctuations may play a crucial role in superconductivity for the pnictides. Superconductivity was seen for KFe2As2, as well as RbFe2As 2, CsFe2As2, and the metastable NaFe2As 2. LiFeAs is an undoped stoichiometric superconductor with a T c = 18 K, but it has been suggested that superconductivity arises from a Li deficiency. These conflicting statements prompted further investigation into the physical properties of LiFeAs. In conclusion, magnetic fluctuations may play a. key role in superconductivity of the pnictides and not charge doping.

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

NASA Technical Reports Server (NTRS)

Corbett, J. W.; Cheng, L. J.; Jaworowski, A.; Karins, J. P.; Lee, Y. H.; Lindstroem, L.; Mooney, P. M.; Oehrlen, G.; Wang, K. L.

1979-01-01

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Cobalt nanoparticles/nitrogen-doped graphene with high nitrogen doping efficiency as noble metal-free electrocatalysts for oxygen reduction reaction.

PubMed

Liang, Jingwen; Hassan, Mehboob; Zhu, Dongsheng; Guo, Liping; Bo, Xiangjie

2017-03-15

Nitrogen-doped graphene (N/GR) has been considered as active metal-free electrocatalysts for oxygen reduction reaction (ORR). However, the nitrogen (N) doping efficiency is very low and only few N atoms are doped into the framework of GR. To boost the N doping efficiency, in this work, a confined pyrolysis method with high N doping efficiency is used for the preparation of cobalt nanoparticles/nitrogen-doped GR (Co/N/GR). Under the protection of SiO 2 , the inorganic ligand NH 3 in cobalt amine complex ([Co(NH 3 ) 6 ] 3+ ) is trapped in the confined space and then can be effectively doped into the framework of GR without the introduction of any carbon residues. Meanwhile, due to the redox reaction between the cobalt ions and carbon atoms of GR, Co nanoparticles are supported into the framework of N/GR. Due to prevention of GR layer aggregation with SiO 2 , the Co/N/GR with high dispersion provides sufficient surface area and maximum opportunity for the exposure of Co nanoparticles and active sites of N dopant. By combination of enhanced N doping efficiency, Co nanoparticles and high dispersion of GR sheets, the Co/N/GR is remarkably active, cheap and selective noble-metal free catalysts for ORR. Copyright © 2016 Elsevier Inc. All rights reserved.

Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.

PubMed

Hsieh, Ping-Yen; Lee, Chi-Young; Tai, Nyan-Hwa

2016-02-01

We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film-based photovoltaic devices.

Multiple doping of silicon-germanium alloys for thermoelectric applications

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre; Vining, Cronin B.; Borshchevsky, Alex

1989-01-01

It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

PubMed Central

Sekulic, Damir; Tahiraj, Enver; Zvan, Milan; Zenic, Natasa; Uljevic, Ognjen; Lesnik, Blaz

2016-01-01

Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females) involved in volleyball (n = 77), soccer (n = 163), basketball (n = 114) and handball (n = 103). Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports. Key points The doping knowledge among Kosovar team-sport athletes is very low and systematic anti-doping education is urgently needed. The highest risk of doping behaviour in males is found for those athletes who had been successful in their junior age and those who consume dietary supplements. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in female team-sport athletes. While the associations between the studied factors and doping behaviour are different between males and females, the gender-specific approach to exploring the covariates of doping behaviour is warranted. PMID:27928206

Probing transport mechanisms of BaFe₂As₂ superconducting films and grain boundary junctions by noise spectroscopy.

PubMed

Barone, C; Romeo, F; Pagano, S; Adamo, M; Nappi, C; Sarnelli, E; Kurth, F; Iida, K

2014-08-22

An important step forward for the understanding of high-temperature superconductivity has been the discovery of iron-based superconductors. Among these compounds, iron pnictides could be used for high-field magnet applications, resulting more advantageous over conventional superconductors, due to a high upper critical field as well as its low anisotropy at low temperatures. However, the principal obstacle in fabricating high quality superconducting wires and tapes is given by grain boundaries. In order to study these effects, the dc transport and voltage-noise properties of Co-doped BaFe₂As₂ superconducting films with artificial grain boundary junctions have been investigated. A specific procedure allows the separation of the film noise from that of the junction. While the former shows a standard 1/f behaviour, the latter is characterized by an unconventional temperature-dependent multi-Lorentzian voltage-spectral density. Moreover, below the film superconducting critical temperature, a peculiar noise spectrum is found for the grain boundary junction. Possible theoretical interpretation of these phenomena is proposed.

Rapid solid-phase microwave synthesis of highly photoluminescent nitrogen-doped carbon dots for Fe3+ detection and cellular bioimaging

NASA Astrophysics Data System (ADS)

He, Guili; Xu, Minghan; Shu, Mengjun; Li, Xiaolin; Yang, Zhi; Zhang, Liling; Su, Yanjie; Hu, Nantao; Zhang, Yafei

2016-09-01

Recently, carbon dots (CDs) have been playing an increasingly important role in industrial production and biomedical field because of their excellent properties. As such, finding an efficient method to quickly synthesize a large scale of relatively high purity CDs is of great interest. Herein, a facile and novel microwave method has been applied to prepare nitrogen doped CDs (N-doped CDs) within 8 min using L-glutamic acid as the sole reaction precursor in the solid phase condition. The as-prepared N-doped CDs with an average size of 1.64 nm are well dispersed in aqueous solution. The photoluminescence of N-doped CDs is pH-sensitive and excitation-dependent. The N-doped CDs show a strong blue fluorescence with relatively high fluorescent quantum yield of 41.2%, which remains stable even under high ionic strength. Since the surface is rich in oxygen-containing functional groups, N-doped CDs can be applied to selectively detect Fe3+ with the limit of detection of 10-5 M. In addition, they are also used for cellular bioimaging because of their high fluorescent intensity and nearly zero cytotoxicity. The solid-phase microwave method seems to be an effective strategy to rapidly obtain high quality N-doped CDs and expands their applications in ion detection and cellular bioimaging.

Creep Resistance of ZrO2 Ceramic Improved by the Addition of a Small Amount of Er2O3

NASA Technical Reports Server (NTRS)

Martinez-Fernandez, Julian; Sayir, Ali; Farmer, Serene C.

2003-01-01

Zirconia (ZrO2) has great technological importance in structural, electrical, and chemical applications. It is the crucial component for state-of-the art thermal barrier coatings and an enabling component as a solid electrolyte for solid-oxide fuel cell systems. Pure ZrO2 is of limited use for industrial applications because of the phase transformations that occur. Upon the addition of stabilizers, cubic (c-ZrO2) and tetragonal (t-ZrO2) forms can be preserved. It is the stabilized and partially stabilized forms of zirconia that function as thermal barrier coatings, solid electrolytes, and oxygen sensors and that have numerous applications in the electrochemical industry. The cubic form of ZrO2 is typically stabilized through Y2O3 additions. However, Y2O3-stabilized zirconia is susceptible to deformation at high temperatures (greater than 900 C) because of the large number of slip systems and the high oxygen diffusion rates, which result in high creep rates at high temperatures. Successful use of ZrO2 at high temperatures requires that new dopant additives be found that will retain or enhance the desirable properties of cubic ZrO2 and yet produce a material with lower creep rates. At the NASA Glenn Research Center, erbium oxide (Er2O3) was identified as a promising dopant for improving the creep resistance of. ZrO2. The selection of Er2O3 was based on the strong interactions of point defects and dislocations. Single crystals of 5 mol% Er2O3- doped ZrO2 rods (4 mm in diameter) and monofilaments (200 to 300 mm in diameter and 30 cm long) were grown using the laser-heated float zone technique, and their creep behavior was measured as a function of temperature. The addition of 5 mol% Er2O3 to single-crystal ZrO2 improved its creep resistance at high temperatures by 2 to 3 orders of magnitude over state-of-the-art Y2O3-doped crystals. Detailed microstructural characterization of ZrO2-Er2O3 single crystals has identified new mechanisms for improving the creep resistance of this class of materials. Adding Er2O3 to ZrO2 results in microstructure of stable and metastable tetragonal precipitates that with thermal treatment evolve to a tweed structure of nanosize tetragonal lamellae. The superior high-temperature creep resistance of Er2O3-doped ZrO2 is attributed to nanoscale precipitation hardening. Doping with Er2O3 will significantly increase the upper-use temperature limit of ZrO2. Potential applications include using Er2O3-doped ZrO2 as a high-temperature fiber for structural applications and adding Er2O3 to reduce the sintering rates of ZrO2 thermal barrier coatings. This work was conducted at Dpto. de F sica de la Materia Condensada, Universidad de Sevilla, Spain, and at NASA Glenn.

Highly doped layer for tunnel junctions in solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fetzer, Christopher M.

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chavanapranee, Tosaporn; Horikoshi, Yoshiji

The characteristics of heavily Sn-doped GaAs samples grown at 300 deg. C by a migration-enhanced epitaxy (MEE) technique are investigated in comparison with those of the samples grown by a conventional molecular-beam epitaxy (MBE) at 580 deg. C. While no discernible difference is observed in the low doping regime, the difference in doping characteristics between the MBE- and MEE-grown samples becomes apparent when the doping concentration exceeds 1x10{sup 19} cm{sup -3}. Sn atoms as high as 4x10{sup 21} cm{sup -3} can be incorporated into MEE-grown GaAs films, unlike the MBE-grown samples that have a maximum doping level limited around 1x10{supmore » 19} cm{sup -3}. Due to an effective suppression of Sn segregation in the MEE growth case, high quality GaAs films with abrupt high-concentration Sn-doping profiles are achieved with the doping concentrations of up to 2x10{sup 21} cm{sup -3}. It has been shown that even though a high concentration of Sn atoms is incorporated into the GaAs film, the electron concentration saturates at 6x10{sup 19} cm{sup -3} and then gradually decreases with Sn concentration. The uniform doping limitation, as well as the electron concentration saturation, is discussed by means of Hall-effect measurement, x-ray diffraction, and Raman scattering spectroscopy.« less

High performance supercapacitors based on highly conductive nitrogen-doped graphene sheets.

PubMed

Qiu, Yongcai; Zhang, Xinfeng; Yang, Shihe

2011-07-21

Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in the range of 0-4 V. This journal is © the Owner Societies 2011

Preparation and characterization of mesoporous ZnO-ZrO2 doped by Cr, Nd and Dy as a catalyst for conversion of coumarin using ultrasensitive fluorometric method

NASA Astrophysics Data System (ADS)

Ibrahim, M. M.

2017-04-01

Doping of mesoporous ZnO-ZrO2 nanoparticles with transition metal and lanthanides (Cr, Nd, Dy) were used as a catalyst to develop an ultrasensitive fluorometric method for the conversion of non fluorescent coumarin to highly fluorescent 7-hydroxycoumarin using H2O2 or light. It was found that doped- ZnO-ZrO2 mixed oxide can catalyze the decomposition of H2O2 to produce •OH radicals, which in turn convert coumarin to 7-hydroxycoumarin. At contrast, the doping has deleterious effect on conversion of coumarin by light due to high band gap and high concentrations of doping increase the recombination rate of electron and holes. Doped mixed oxides prepared by impregnation method and characterized by studying their structural, surface and optical properties. Chromium doped ZnO-ZrO2 had the highest rate of formation of hydroxyl radical due to decomposition of H2O2 and therefore 7-hydroxycoumarin due to surface area, small crystal size and high redox potential.

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

PubMed

Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

2016-11-24

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

N/S Co-doped Carbon Derived From Cotton as High Performance Anode Materials for Lithium Ion Batteries.

PubMed

Xiong, Jiawen; Pan, Qichang; Zheng, Fenghua; Xiong, Xunhui; Yang, Chenghao; Hu, Dongli; Huang, Chunlai

2018-01-01

Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1,101.1 mA h g -1 after 150 cycles at 0.2 A g -1 , and a high capacity of 531.2 mA h g -1 can be observed even after 5,000 cycles at 10.0 A g -1 . Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g -1 can be obtained at 5.0 A g -1 . This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries.

N/S co-doped carbon derived from Cotton as high performance anode materials for lithium ion batteries

NASA Astrophysics Data System (ADS)

Xiong, Jiawen; Pan, Qichang; Zheng, Fenghua; Xiong, Xunhui; Yang, Chenghao; Hu, Dongli; Huang, Chunlai

2018-04-01

Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1101.1 mA h g-1 after 150 cycles at 0.2 A g-1, and a high capacity of 531.2 mA h g-1 can be observed even after 5000 cycles at 10.0 A g-1. Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g-1 can be obtained at 5.0 A g-1. This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries.

N/S Co-doped Carbon Derived From Cotton as High Performance Anode Materials for Lithium Ion Batteries

PubMed Central

Xiong, Jiawen; Pan, Qichang; Zheng, Fenghua; Xiong, Xunhui; Yang, Chenghao; Hu, Dongli; Huang, Chunlai

2018-01-01

Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1,101.1 mA h g−1 after 150 cycles at 0.2 A g−1, and a high capacity of 531.2 mA h g−1 can be observed even after 5,000 cycles at 10.0 A g−1. Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g−1 can be obtained at 5.0 A g−1. This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries. PMID:29755966

Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

NASA Astrophysics Data System (ADS)

Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

2016-08-01

Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

High-pressure studies on Ba-doped cobalt perovskites by neutron diffraction

NASA Astrophysics Data System (ADS)

Cao, Huibo; Garlea, Vasile; Wang, Fangwei; Dos Santos, Antonio; Cheng, Zhaohua

2012-02-01

Cobalt perovskite possess rich structural, magnetic and electrical properties depending on the subtle balance of the interactions among the spin, charge, and orbital degrees of freedom. Divalent hole-doped cobalt perovskites LaA^2+CoO3 exhibit structural phase transitions, metal-insulator transitions, and multi-magnetic phase transitions. High-pressure measurement is believed to mimic the size effects of the doped ions. We performed neutron diffraction experiments on selected Ba-doped LaCoO3 under pressures up to 6.3 GPa at SNAP at Spallation Neutron Source of ORNL. This work focuses on the high-pressure effects of the selected Ba-doped samples and the change of the phase diagram with pressure.

Simultaneous Graphite Exfoliation and N Doping in Supercritical Ammonia.

PubMed

Sasikala, Suchithra Padmajan; Huang, Kai; Giroire, Baptiste; Prabhakaran, Prem; Henry, Lucile; Penicaud, Alain; Poulin, Philippe; Aymonier, Cyril

2016-11-16

We report the exfoliation of graphite and simultaneous N doping of graphene by two methods: supercritical ammonia treatment and liquid-phase exfoliation with NH 4 OH. While the supercritical ammonia allowed N doping at a level of 6.4 atom % in 2 h, the liquid-phase exfoliation with NH 4 OH allowed N doping at a level of 2.7 atom % in 6 h. The N doped graphene obtained via the supercritical ammonia route had few layers (<5) and showed large lateral flake size (∼8 μm) and low defect density (I D /I G < 0.6) in spite of their high level of N doping. This work is the first demonstration of supercritical ammonia as an exfoliation agent and N doping precursor for graphene. Notably, the N doped graphene showed electrocatalytic activity toward oxygen reduction reaction with high durability and good methanol tolerance compared to those of commercial Pt/C catalyst.

Effect of vanadium doping on the properties of high Curie point ferroelectric strontium niobate ceramic

NASA Astrophysics Data System (ADS)

Ning, Huanpo

2017-10-01

Different levels of isovalent dopant vanadium were doped on the B site of Sr2Nb2O7 to explore the doping effect on its dielectric and ferroelectric properties. A second phase could be detected with above 1 mol% V2O5 doping. The grains after doping remained anisotropic and plate-like. The samples are not dense, as there are pores present at the grain boundaries. The corrected dielectric constant for 0.1 mol%, 0.2 mol%, and 0.3 mol% V doped SNO at 1 MHz is around 46, 48 and 49, respectively, which indicates the effect of V doping on the increase of dielectric constant of SNO (ɛr is about 40 at 1 MHz). The Curie point Tc increased with the increase in the V doping level. The relatively high d33 (2.3 pC/N) measured from the non-dense and untextured samples indicates the potential effect of V2O5 doping on the improvement of piezoelectricity of SNO.

Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

PubMed

Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

2018-04-24

Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

Recent development on high-power tandem-pumped fiber laser

NASA Astrophysics Data System (ADS)

Zhou, Pu; Xiao, Hu; Leng, Jinyong; Zhang, Hanwei; Xu, Jiangmin; Wu, Jian

2016-11-01

High power fiber laser is attracting more and more attention due to its advantage in excellent beam quality, high electricto- optical conversion efficiency and compact system configuration. Power scaling of fiber laser is challenged by the brightness of pump source, nonlinear effect, modal instability and so on. Pumping active fiber by using high-brightness fiber laser instead of common laser diode may be the solution for the brightness limitation. In this paper, we will present the recent development of various kinds of high power fiber laser based on tandem pumping scheme. According to the absorption property of Ytterbium-doped fiber, Thulium-doped fiber and Holmium-doped fiber, we have theoretically studied the fiber lasers that operate at 1018 nm, 1178 nm and 1150 nm, respectively in detail. Consequently, according to the numerical results we have optimized the fiber laser system design, and we have achieved (1) 500 watt level 1018nm Ytterbium-doped fiber laser (2) 100 watt level 1150 nm fiber laser and 100 watt level random fiber laser (3) 30 watt 1178 nm Ytterbium-doped fiber laser, 200 watt-level random fiber laser. All of the above-mentioned are the record power for the corresponded type of fiber laser to the best of our knowledge. By using the high-brightness fiber laser operate at 1018 nm, 1178 nm and 1150 nm that we have developed, we have achieved the following high power fiber laser (1) 3.5 kW 1090 nm Ytterbium-doped fiber amplifier (2) 100 watt level Thulium-doped fiber laser and (3) 50 watt level Holmium -doped fiber laser.

All-fiber linearly polarized high power 2-μm single mode Tm-fiber laser for plastic processing and Ho-laser pumping applications

NASA Astrophysics Data System (ADS)

Scholle, K.; Schäfer, M.; Lamrini, S.; Wysmolek, M.; Steinke, M.; Neumann, J.; Fuhrberg, P.

2018-02-01

In this paper we present a high power, polarized 2 μm Thulium-doped fiber laser with high beam quality. Such laser systems are ideally suited for the processing of plastic materials which are highly transparent in the visible and 1 μm wavelength range and for the pumping of laser sources for the mid-IR wavelength region. For most applications polarized lasers are beneficial, as they can be easily protected from back reflections and combined with other laser sources or power scaled by polarization combining. The Tm-doped fiber laser is pumped in an all-fiber configuration by using a fiber coupled pump diode emitting around 790 nm. This pumping scheme allows the exploitation of the crossrelaxation process to populate the upper laser level. A compact and robust laser configuration was achieved by using an all-fiber configuration with single mode fibers and fiber Bragg gratings (FBG). Different FBG pairs with wavelength around 2 μm were tested. To achieve stable polarized output power the fibers with the FBG were 90° twisted at the splices. Stable linearly polarized output power up to 38 W with an extinction ratio of up to 50:1 was observed. With respect to the diode output power an optical-to-optical efficiency of 51 % was reached with a correspondent slope efficiency of 52 %. The emission linewidth at maximum power was measured to be < 0.3 nm which is well suitable for Ho-laser pumping. First tests of the precise processing of highly transparent plastic materials demonstrate the potentials of these laser systems.

3D Polyaniline Architecture by Concurrent Inorganic and Organic Acid Doping for Superior and Robust High Rate Supercapacitor Performance

NASA Astrophysics Data System (ADS)

Gawli, Yogesh; Banerjee, Abhik; Dhakras, Dipti; Deo, Meenal; Bulani, Dinesh; Wadgaonkar, Prakash; Shelke, Manjusha; Ogale, Satishchandra

2016-02-01

A good high rate supercapacitor performance requires a fine control of morphological (surface area and pore size distribution) and electrical properties of the electrode materials. Polyaniline (PANI) is an interesting material in supercapacitor context because it stores energy Faradaically. However in conventional inorganic (e.g. HCl) acid doping, the conductivity is high but the morphological features are undesirable. On the other hand, in weak organic acid (e.g. phytic acid) doping, interesting and desirable 3D connected morphological features are attained but the conductivity is poorer. Here the synergy of the positive quality factors of these two acid doping approaches is realized by concurrent and optimized strong-inorganic (HCl) and weak-organic (phytic) acid doping, resulting in a molecular composite material that renders impressive and robust supercapacitor performance. Thus, a nearly constant high specific capacitance of 350 F g-1 is realized for the optimised case of binary doping over the entire range of 1 A g-1 to 40 A g-1 with stability of 500 cycles at 40 A g-1. Frequency dependant conductivity measurements show that the optimized co-doped case is more metallic than separately doped materials. This transport property emanates from the unique 3D single molecular character of such system.

3D Polyaniline Architecture by Concurrent Inorganic and Organic Acid Doping for Superior and Robust High Rate Supercapacitor Performance.

PubMed

Gawli, Yogesh; Banerjee, Abhik; Dhakras, Dipti; Deo, Meenal; Bulani, Dinesh; Wadgaonkar, Prakash; Shelke, Manjusha; Ogale, Satishchandra

2016-02-12

A good high rate supercapacitor performance requires a fine control of morphological (surface area and pore size distribution) and electrical properties of the electrode materials. Polyaniline (PANI) is an interesting material in supercapacitor context because it stores energy Faradaically. However in conventional inorganic (e.g. HCl) acid doping, the conductivity is high but the morphological features are undesirable. On the other hand, in weak organic acid (e.g. phytic acid) doping, interesting and desirable 3D connected morphological features are attained but the conductivity is poorer. Here the synergy of the positive quality factors of these two acid doping approaches is realized by concurrent and optimized strong-inorganic (HCl) and weak-organic (phytic) acid doping, resulting in a molecular composite material that renders impressive and robust supercapacitor performance. Thus, a nearly constant high specific capacitance of 350 F g(-1) is realized for the optimised case of binary doping over the entire range of 1 A g(-1) to 40 A g(-1) with stability of 500 cycles at 40 A g(-1). Frequency dependant conductivity measurements show that the optimized co-doped case is more metallic than separately doped materials. This transport property emanates from the unique 3D single molecular character of such system.

Effect of Boron Doping on High-Resolution X-Ray Diffraction Metrology

NASA Astrophysics Data System (ADS)

Faheem, M.; Zhang, Y.; Dai, X.

2018-03-01

The effect of boron (B) doping on high-resolution X-ray diffraction (HXRD) metrology has been investigated. Twelve samples of Si1-xGex films were epitaxially grown on Si (100) substrates with different thicknesses, germanium (Ge) concentrations and with/without B dopants. Secondary ion mass spectroscopy (SIMS) and HXRD were employed for measurements of B doping, Ge concentration, strain, and thickness of the layers. The SIMS results show the absence of B in two samples while the rest of the samples have B doping in the range of 8.40 × 1018-8.7 × 1020 atoms/cm3 with Ge concentration of 13.3-55.2 at.%. The HXRD measurements indicate the layers thickness of 7.07-108.13 nm along with Ge concentration of 12.82-49.09 at.%. The difference in the Ge concentration measured by SIMS and HXRD was found to deend on B doping. For the undoped samples, the difference is 0.5 at.% and increases with B doping but with no linear proportionality. The difference in the Ge concentration was 7.11 at.% for the highly B-doped (8.7 × 1020 atoms/cm3) sample. The B doping influences the Si1-xGex structure, causing a change in the lattice parameter and producing tensile strains shifting Si1-xGex peaks towards Si (100) substrate peaks in the HXRD diffraction patterns. As a result, Vegard's law is no longer effective and makes a high impact on the HXRD measurement. The comparison between symmetric (004) and asymmetric (+113, +224) reciprocal space mappings (RSM) showed a slight difference in Ge concentration between the undoped and lower B-doped samples. However, there is a change of 0.21 at.% observed for the highly doped Si1-xGex samples. RSM's (+113) demonstrate the small SiGe peak broadening as B doping increases, which indicates a minor crystal distortion.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jie; He, Yunteng; Kong, Wei, E-mail: wei.kong@oregonstate.edu

We report electron diffraction of ferrocene doped in superfluid helium droplets. By taking advantage of the velocity slip in our pulsed droplet beam using a pulsed electron gun, and by doping with a high concentration of ferrocene delivered via a pulsed valve, we can obtain high quality diffraction images from singly doped droplets. Under the optimal doping conditions, 80% of the droplets sampled in the electron beam are doped with just one ferrocene molecule. Extension of this size selection method to dopant clusters has also been demonstrated. However, incomplete separation of dopant clusters might require deconvolution and modeling of themore » doping process. This method can be used for studies of nucleation processes in superfluid helium droplets.« less

Facile synthesis of cellulose-based carbon with tunable N content for potential supercapacitor application.

PubMed

Chen, Zehong; Peng, Xinwen; Zhang, Xiaoting; Jing, Shuangshuang; Zhong, Linxin; Sun, Runcang

2017-08-15

Producing hierarchical porous N-doped carbon from renewable biomass is an essential and sustainable way for future electrochemical energy storage. Herein we cost-efficiently synthesized N-doped porous carbon from renewable cellulose by using urea as a low-cost N source, without any activation process. The as-prepared N-doped porous carbon (N-doped PC) had a hierarchical porous structure with abundant macropores, mesopores and micropores. The doping N resulted in more disordered structure, and the doping N content in N-doped PC could be easily tunable (0.68-7.64%). The doping N functionalities could significantly improve the supercapacitance of porous carbon, and even a little amount of doping N (e.g. 0.68%) could remarkably improve the supercapacitance. The as-prepared N-doped PC with a specific surface area of 471.7m 2 g -1 exhibited a high specific capacitance of 193Fg -1 and a better rate capability, as well as an outstanding cycling stability with a capacitance retention of 107% after 5000 cycles. Moreover, the N-doped porous carbon had a high energy density of 17.1Whkg -1 at a power density of 400Wkg -1 . Copyright © 2017 Elsevier Ltd. All rights reserved.

Bifunctional Nitrogen-Doped Microporous Carbon Microspheres Derived from Poly(o-methylaniline) for Oxygen Reduction and Supercapacitors.

PubMed

He, Yanzhen; Han, Xijiang; Du, Yunchen; Song, Bo; Xu, Ping; Zhang, Bin

2016-02-17

Heteroatom-doped carbon materials have attracted significant attention because of their applications in oxygen reduction reaction (ORR) and supercapacitors. Here we demonstrate a facile poly(o-methylaniline)-derived fabrication of bifunctional microporous nitrogen-doped carbon microspheres (NCMSs) with high electrocatalytic activity and stability for ORR and energy storage in supercapacitors. At a pyrolysis temperature of 900 °C, the highly dispersed NCMSs present a high surface area (727.1 m(2) g(-1)), proper total content of doping N, and high concentration of quaternary N, which exhibit superior electrocatalytic activities for ORR to the commercial Pt/C catalysts, high specific capacitance (414 F g(-1)), and excellent durability, making them very promising for advanced energy conversion and storage. The presented conducting polymer-derived strategy may provide a new way for the fabrication of heteroatom-doped carbon materials for energy device applications.

High efficiency photovoltaic device

DOEpatents

Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

1999-11-02

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Facile hydrothermal method for synthesizing nitrogen-doped graphene nanoplatelets using aqueous ammonia: dispersion, stability in solvents and thermophysical performances

NASA Astrophysics Data System (ADS)

Shafiah Shazali, Siti; Amiri, Ahmad; Zubir, Mohd. Nashrul Mohd; Rozali, Shaifulazuar; Zakuan Zabri, Mohd; Sabri, Mohd Faizul Mohd

2018-03-01

A simple and green approach has been developed to synthesize nitrogen-doped graphene nanoplatelets (N-doped GNPs) for mass production with a very high stability in different solvents e.g. water, ethylene glycol, methanol, ethanol, and 1-hexanol. The strategy is based on mild oxidation of GNPs using hydrogen peroxide and doping with nitrogen using hydrothermal process. The modification of N-doped GNPs was demonstrated by FTIR, TGA, XPS, Raman spectroscopy and high resolution-transmission electron microscope (HRTEM). Further study was carried out by using N-doped GNPs as an additive to prepare different colloidal dispersions. Water-based N-doped GNPs, methanol-based N-doped GNPs, ethanol-based N-doped GNPs, ethylene-glycol based N-doped GNPs and 1-hexanol-based N-doped GNPs dispersions at 0.01 wt.% shown great colloidal stabilities, indicating 17%, 29%, 33%, 18%, and 43% sedimentations after a 15-days period, respectively. The thermophysical properties e.g., viscosity and thermal conductivity of water-based N-doped GNP nanofluids were also evaluated for different weight concentrations of 0.100, 0.075, 0.050, and 0.025 wt.%. Through this, it is found that the obtained dispersions have great potential to be used as working fluids for industrial thermal systems.

Evidence of chemical-potential shift with hole doping in Bi2Sr2CaCu2O8+δ

NASA Astrophysics Data System (ADS)

Shen, Z.-X.; Dessau, D. S.; Wells, B. O.; Olson, C. G.; Mitzi, D. B.; Lombado, Lou; List, R. S.; Arko, A. J.

1991-12-01

We have performed photoemission studies on high-quality Bi2Sr2CaCu2O8+δ samples with various δ. Our results show a clear chemical-potential shift (0.15-0.2 eV) as a function of doping. This result and the existing angle-resolved-photoemission data give a rather standard doping behavior of this compound in its highly doped regime.

Cobalt-doping-induced synthesis of ceria nanodisks and their significantly enhanced catalytic activity.

PubMed

Guo, Xiao-Hui; Mao, Chao-Chao; Zhang, Ji; Huang, Jun; Wang, Wa-Nv; Deng, Yong-Hui; Wang, Yao-Yu; Cao, Yong; Huang, Wei-Xin; Yu, Shu-Hong

2012-05-21

High-quality cobalt-doped ceria nanostructures with triangular column, triangular slab, and disklike shapes are synthesized by tuning the doping amount of cobalt nitrate in a facile hydrothermal reaction. The cobalt-doped ceria nanodisks display significantly enhanced catalytic activity in CO oxidation due to exposed highly active crystal planes and the presence of numerous surface defects. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A study of scandia and rhenium doped tungsten matrix dispenser cathode

NASA Astrophysics Data System (ADS)

Wang, Jinshu; Li, Lili; Liu, Wei; Wang, Yanchun; Zhao, Lei; Zhou, Meiling

2007-10-01

Scandia and rhenium doped tungsten powders were prepared by solid-liquid doping combined with two-step reduction method. The experimental results show that scandia was distributed evenly on the surface of tungsten particles. The addition of scandia and rhenium could decrease the particle size of doped tungsten, for example, the tungsten powders doped with Sc 2O 3 and Re had the average size of about 50 nm in diameter. By using this kind of powder, scandia and rhenium doped tungsten matrix with the sub-micrometer sized tungsten grains was obtained. This kind of matrix exhibited good anti-bombardment insensitivity at high temperature. The emission property result showed that high space charge limited current densities of more than 60 A/cm 2 at 900 °C could be obtained for this cathode. A Ba-Sc-O multilayer about 100 nm in thickness formed at the surface of cathode after activation led to the high emission property.

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

NASA Astrophysics Data System (ADS)

Khusyainov, D. I.; Dekeyser, C.; Buryakov, A. M.; Mishina, E. D.; Galiev, G. B.; Klimov, E. A.; Pushkarev, S. S.; Klochkov, A. N.

2017-10-01

We characterized the ultrafast properties of LT-GaAs doped with silicon δ-layers and introduced delta-doping (δ-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With δ-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the δ-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without δ-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the δ-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

Positron annihilation spectroscopy in doped p-type ZnO

NASA Astrophysics Data System (ADS)

Majumdar, Sayanee; Sanyal, D.

2011-07-01

Positron annihilation lifetime (PAL) spectroscopy has been used to investigate the vacancy type defect of the Li and N doped ZnO. The mono-vacancies, shallow -vacancies and open volume defects have been found in both the Li and N doped ZnO. The mono-vacancies, shallow-vacancies and open volume defects increase in N-doped ZnO as the size of N is quite high compared to Li. Positron annihilation study showed that the doping above 1-3% Li and 3-4% N in ZnO are not required in order to achieve low resistivity, high hole concentration and good mobility.

Synthesis of n-type semiconductor diamond single crystal under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Li, Yong; Li, Shangsheng; Song, Mousheng; She, Yanchao; Wang, Qiang; Guan, Xuemao

2017-12-01

In this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.

Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

NASA Technical Reports Server (NTRS)

Wang, Yang

1994-01-01

We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

Structure prediction of boron-doped graphene by machine learning

NASA Astrophysics Data System (ADS)

M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

2018-06-01

Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

In Situ One-Step Synthesis of Hierarchical Nitrogen-Doped Porous Carbon for High Performance Supercapacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Ju Won; Sharma, Ronish; Meduri, Praveen

2014-04-30

Electrochemical performance of the existing state-of-the art capacitors is not very high, key scientific barrier is that its charge storage mechanism wholly depends on adsorption of electrolyte on electrode. We present a novel method for the synthesis of nitrogen -doped porous carbons and address the drawback by precisely controlling composition and surface area. Nitrogen-doped porous carbon was synthesized using a self-sacrificial template technique without any additional nitrogen and carbon sources. They exhibited exceptionally high capacitance (239 Fg-1) due to additional pseudocapacitance originating from doped nitrogen. Cycling tests showed no obvious capacitance decay even after 10,000 cycles, which meets the requirementmore » of commercial supercapacitors. Our method is simple and highly efficient for the production of large quantities of nitrogen-doped porous carbons.« less

Room temperature ferromagnetism in transition metal-doped black phosphorous

NASA Astrophysics Data System (ADS)

Jiang, Xiaohong; Zhang, Xinwei; Xiong, Fang; Hua, Zhenghe; Wang, Zhihe; Yang, Shaoguang

2018-05-01

High pressure high temperature synthesis of transition metal (TM = V, Cr, Mn, Fe, Co, Ni, and Cu) doped black phosphorus (BP) was performed. Room temperature ferromagnetism was observed in Cr and Mn doped BP samples. X-ray diffraction and Raman measurements revealed pure phase BP without any impurity. Transport measurements showed us semiconducting character in 5 at. % doped BP samples Cr5%P95% and Mn5%P95%. The magnetoresistance (MR) studies presented positive MR in the relatively high temperature range and negative MR in the low temperature range. Compared to that of pure BP, the maximum MR was enhanced in Cr5%P95%. However, paramagnetism was observed in V, Fe, Co, Ni, and Cu doped BP samples.

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

DOEpatents

Carlson, David E.; Wronski, Christopher R.

1979-01-01

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Doping-induced spectral shifts in two-dimensional metal oxides

NASA Astrophysics Data System (ADS)

Ylvisaker, E. R.; Pickett, W. E.

2013-03-01

Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high-temperature superconductivity in cuprates (hole doped) and to surprisingly high Tc in HfNCl (Tc = 25.5 K, electron doped). First-principles calculations of hole doping of the layered delafossite CuAlO2 reveal unexpectedly large doping-induced shifts in spectral density, strongly in opposition to the rigid-band picture that is widely used as an accepted guideline. These spectral shifts, of similar origin as the charge transfer used to produce negative electron affinity surfaces and adjust Schottky barrier heights, drastically alter the character of the Fermi level carriers, leading in this material to an O-Cu-O molecule-based carrier (or polaron, at low doping) rather than a nearly pure-Cu hole as in a rigid-band picture. First-principles linear response electron-phonon coupling (EPC) calculations reveal, as a consequence, net weak EPC and no superconductivity rather than the high Tc obtained previously using rigid-band expectations. These specifically two-dimensional dipole-layer-driven spectral shifts provide new insights into materials design in layered materials for functionalities besides superconductivity.

Generation of high powers from diode pumped chromium-3+ doped colquiriites

NASA Astrophysics Data System (ADS)

Eichenholz, Jason Matthew

1998-12-01

There is considerable interest in the area of laser diode pumped solid-state lasers. Diode pumped solid-state lasers (DPSSL) operating at high average power levels are attractive light sources for various applications such as materials processing, laser radar, and fundamental physics experiments. These laser systems have become more commonplace because of their efficiency, reliability, compactness, low relative cost, and long operational lifetimes. Induced thermal effects in the solid-state laser medium hinder the scaling of DPSSL's to higher average power levels. Therefore a deep insight into the thermo-mechanical properties of the solid state laser is crucial in order to ensure a laser design which is optimized for high average power operation. A comprehensive study of the factors that contribute to thermal loading of the colquiriites was performed. A three-dimensional thermal model has been created to determine the temperature rise inside the laser crystal. This new model calculates the temperature distribution by considering quantum defect, upconversion, and upper-state lifetime quenching as heating sources. The thermally induced lensing in end pumped Cr3+ doped LiSrAlF6, LiSrGaF6, LiSrCaAlF6, and LiCaAlF6 were experimentally measured. Several diode pumped colquiriite laser systems were assembled to quantitatively observe and identify thermally induced effects. Significant differences in each of the colquiriite materials were observed. These differences are explained by the differences in the thermo-mechanical and thermo-optical properties of the material and are explained by the theoretical thermal model.

H.sub.2O doped WO.sub.3, ultra-fast, high-sensitivity hydrogen sensors

DOEpatents

Liu, Ping [Denver, CO; Tracy, C Edwin [Golden, CO; Pitts, J Roland [Lakewood, CO; Lee, Se-Hee [Lakewood, CO

2011-03-22

An ultra-fast response, high sensitivity structure for optical detection of low concentrations of hydrogen gas, comprising: a substrate; a water-doped WO.sub.3 layer coated on the substrate; and a palladium layer coated on the water-doped WO.sub.3 layer.

Investigation of ASE and SRS effects on 1018nm short-wavelength Yb3+-doped fiber laser

NASA Astrophysics Data System (ADS)

Xie, Zhaoxin; Shi, Wei; Sheng, Quan; Fu, Shijie; Fang, Qiang; Zhang, Haiwei; Bai, Xiaolei; Shi, Guannan; Yao, Jianquan

2017-03-01

1018nm short wavelength Yb3+-doped fiber laser can be widely used for tandem-pumped fiber laser system in 1 μm regime because of its high brightness and low quantum defect (QD). In order to achieve 1018nm short wavelength Yb3+-doped fiber laser with high output power, a steady-state rate equations considering the amplified spontaneous emission (ASE) and Stimulated Raman Scattering (SRS) has been established. We theoretically analyzed the ASE and SRS effects in 1018nm short wavelength Yb3+-doped fiber laser and the simulation results show that the ASE is the main restriction rather than SRS for high power 1018nm short wavelength Yb3+-doped fiber laser, besides the high temperature of fiber is also the restriction for high output power. We use numerical solution of steady-state rate equations to discuss how to suppress ASE in 1018nm short wavelength fiber laser and how to achieve high power 1018nm short-wavelength fiber laser.

Growth, spectroscopy, and laser performance of a 2.79 μm Cr,Er,Pr:GYSGG radiation-resistant crystal.

PubMed

Luo, Jianqiao; Sun, Dunlu; Zhang, Huili; Guo, Qiang; Fang, Zhongqing; Zhao, Xuyao; Cheng, Maojie; Zhang, Qingli; Yin, Shaotang

2015-09-15

We demonstrate the growth, spectroscopy, and laser performance of a 2.79 μm Cr,Er,Pr:GYSGG radiation-resistant crystal. The lifetimes for the upper laser level (4)I(11/2) and lower laser level (4)I(13/2) are 0.59 and 0.84 ms, respectively, which are due to the doping of the Pr(3+) ions. A maximum pulse energy of 278 mJ operated at 10 Hz and 2.79 μm is obtained when pumped with a flash lamp, which corresponds to the electrical-to-optical efficiency of 0.6% and a slope efficiency of 0.7%. A maximum average power of 2.9 W at 60 Hz is achieved, which corresponds to the electrical-to-optical efficiency of 0.4% and slope efficiency of 0.8%. Compared with a Cr,Er:YSGG crystal, the Cr,Er,Pr:GYSGG crystal can be operated at a higher pulse repetition rate. These results suggest that doping deactivator Pr(3+) ions can effectively decrease the lower laser level lifetime and improve the laser repetition rate. Therefore, the application fields and range of the Cr,Er,Pr:GYSGG laser can be extended greatly due to its properties of radiation resistance and high repetition frequency.

3D Polyaniline Architecture by Concurrent Inorganic and Organic Acid Doping for Superior and Robust High Rate Supercapacitor Performance

PubMed Central

Gawli, Yogesh; Banerjee, Abhik; Dhakras, Dipti; Deo, Meenal; Bulani, Dinesh; Wadgaonkar, Prakash; Shelke, Manjusha; Ogale, Satishchandra

2016-01-01

A good high rate supercapacitor performance requires a fine control of morphological (surface area and pore size distribution) and electrical properties of the electrode materials. Polyaniline (PANI) is an interesting material in supercapacitor context because it stores energy Faradaically. However in conventional inorganic (e.g. HCl) acid doping, the conductivity is high but the morphological features are undesirable. On the other hand, in weak organic acid (e.g. phytic acid) doping, interesting and desirable 3D connected morphological features are attained but the conductivity is poorer. Here the synergy of the positive quality factors of these two acid doping approaches is realized by concurrent and optimized strong-inorganic (HCl) and weak-organic (phytic) acid doping, resulting in a molecular composite material that renders impressive and robust supercapacitor performance. Thus, a nearly constant high specific capacitance of 350 F g−1 is realized for the optimised case of binary doping over the entire range of 1 A g−1 to 40 A g−1 with stability of 500 cycles at 40 A g−1. Frequency dependant conductivity measurements show that the optimized co-doped case is more metallic than separately doped materials. This transport property emanates from the unique 3D single molecular character of such system. PMID:26867570

Plasmonic transparent conducting metal oxide nanoparticles and films for optical sensing applications

DOEpatents

Ohodnicki, Jr., Paul R; Wang, Congjun; Andio, Mark A

2014-01-28

The disclosure relates to a method of detecting a change in a chemical composition by contacting a doped oxide material with a monitored stream, illuminating the doped oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The doped metal oxide has a carrier concentration of at least 10.sup.18/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.1 S/cm, where parameters are specified at a temperature of 25.degree. C. The optical response of the doped oxide materials results from the high carrier concentration of the doped metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration. These changes in effective carrier densities of conducting metal oxide nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary doped metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

Structure and Electric Conduction in Pulsed Laser-Deposited ZnO Thin Films Individually Doped with N, P, or Na

NASA Astrophysics Data System (ADS)

Jiao, D. L.; Zhong, X. C.; Qiu, W. Q.; Zhang, H.; Liu, Z. W.; Zhang, G. Q.

2018-03-01

N-, P-, and Na-doped ZnO films with c-axis orientation were produced by pulsed laser deposition using N2O or O2 as the reaction gas. The effects of deposition temperature and deposition pressure on the lattice structure, morphology, and electric conduction have been investigated. High gas pressure leads to large-sized grains with large grain barriers, which cause a reduced mobility. P acts as an acceptor and the number of compensating defects in the P-doped film is reduced under high O2 pressure. Na also acts as an acceptor, and the effects of high temperature on Na-doped films are encouraging as the solubility of the dopant is high. However, high temperature may cause less incorporation of N and P in the film. In the present work, p-type conduction has not been obtained in N- and P-doped films despite a wide range of processing parameters employed. Na-doped films display an increasing trend towards p-type films at high temperatures and high O2 pressures. These results provide an insight on how these dopants behave in ZnO films and indicate that the careful selection of the deposition conditions is necessary in order to obtain p-type films by pulsed laser deposition.

Thermoelectric properties of the yttrium-doped ceramic oxide SrTiO3

NASA Astrophysics Data System (ADS)

Khan, Tamal Tahsin; Ur, Soon-Chul

2017-01-01

The doping dependence of the thermoelectric figure of merit, ZT, of the ceramic oxide SrTiO3 at high temperature has been studied. In this study, yttrium was used as the doping element. A conventional solid-state reaction method was used for the preparation of Y-doped SrTiO3. The doping level in SrTiO3 was controlled to be in the doping range of 2 - 10 mole%. Almost all the yttrium atoms incorporated into the SrTiO3 provided charge carriers, as was observed by using X-ray diffraction pattern. The relative densities of all the samples varied from 98.53% to 99.45%. The thermoelectric properties, including the electrical conductivity σ, Seebeck coefficient S, thermal conductivity k, and the figure of merit, ZT, were investigated at medium temperatures. The ZT value showed an obvious doping level dependence, in which a value as high as 0.18 is realized at 773 K for a doping of 8 mole%.

Epitaxial Deposition Of Germanium Doped With Gallium

NASA Technical Reports Server (NTRS)

Huffman, James E.

1994-01-01

Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Lignocellulose-derived porous phosphorus-doped carbon as advanced electrode for supercapacitors

NASA Astrophysics Data System (ADS)

Yi, Jianan; Qing, Yan; Wu, ChuTian; Zeng, Yinxiang; Wu, Yiqiang; Lu, Xihong; Tong, Yexiang

2017-05-01

Engineering porous heteroatom-doped carbon nanomaterials with remarkable capacitive performance is highly attractive. Herein, a simple and smart method has been developed to synthesize phosphorus (P) doped carbon with hierarchical porous structure derived from lignocellulose. Hierarchically porous P doped carbon is readily obtained by the pyrolysis of lignocellulose immersed in ZnCl2/NaH2PO4 aqueous solution, and exhibits excellent capacitive properties. The as-obtained P doped porous carbon delivers a significant capacitance of 133 F g-1 (146 mF cm-2) at a high current density of 10 A g-1 with outstanding rate performance. Furthermore, the P doped carbon electrode yields a long-term cycling durability with more than 97.9% capacitance retention after 10000 cycles as well. A symmetric supercapacitor with a maximum energy density of 4.7 Wh kg-1 is also demonstrated based on these P doped carbon electrodes.

Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2016-10-01

For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.

PubMed

Khalil, Hafiz M W; Khan, Muhammad Farooq; Eom, Jonghwa; Noh, Hwayong

2015-10-28

The development of low resistance contacts to 2D transition-metal dichalcogenides (TMDs) is still a big challenge for the future generation field effect transistors (FETs) and optoelectronic devices. Here, we report a chemical doping technique to achieve low contact resistance by keeping the intrinsic properties of few layers WS2. The transfer length method has been used to investigate the effect of chemical doping on contact resistance. After doping, the contact resistance (Rc) of multilayer (ML) WS2 has been reduced to 0.9 kΩ·μm. The significant reduction of the Rc is mainly due to the high electron doping density, thus a reduction in Schottky barrier height, which limits the device performance. The threshold voltage of ML-WS2 FETs confirms a negative shift upon the chemical doping, as further confirmed from the positions of E(1)2g and A1g peaks in Raman spectra. The n-doped samples possess a high drain current of 65 μA/μm, with an on/off ratio of 1.05 × 10(6) and a field effect mobility of 34.7 cm(2)/(V·s) at room temperature. Furthermore, the photoelectric properties of doped WS2 flakes were also measured under deep ultraviolet light. The potential of using LiF doping in contact engineering of TMDs opens new ways to improve the device performance.

Mechanism of radiative recombination in acceptor-doped bulk GaN crystals

NASA Astrophysics Data System (ADS)

Godlewski, M.; Suski, T.; Grzegory, I.; Porowski, S.; Bergman, J. P.; Chen, W. M.; Monemar, B.

1999-12-01

Optical and electrical properties of acceptor-doped bulk GaN crystals are discussed. Though introducing Zn and Ca to bulk GaN does not significantly change electron concentration, it results in the appearance of a blue photoluminescence band accompanying the relatively strong yellow band usually present. Highly resistive GaN : Mg crystals are obtained when high amount of Mg is introduced to the Ga melt during high-pressure synthesis. Change of electrical properties of Mg-doped bulk crystals is accompanied by the appearance of a strong blue emission of GaN similar to that in Ca- and Zn-doped crystals. Optically detected magnetic resonance investigations indicate a multi-band character of this blue emission and suggest possible mechanism of compensation in acceptor-doped bulk GaN.

Delta-doping optimization for high quality p-type GaN

NASA Astrophysics Data System (ADS)

Bayram, C.; Pau, J. L.; McClintock, R.; Razeghi, M.

2008-10-01

Delta (δ -) doping is studied in order to achieve high quality p-type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the δ-doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different δ-doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018 cm-3 and superior crystal quality compared to conventional p-GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in δ-doped p-GaN.

Kinetics of Static Strain Aging in Polycrystalline NiAl-based Alloys

NASA Technical Reports Server (NTRS)

Weaver, M. L.; Kaufman, M. J.; Noebe, R. D.

1996-01-01

The kinetics of yield point return have been studied in two NiAl-based alloys as a function of aging time at temperatures between 300 and 700 K. The results indicate that the upper yield stress increment, Delta sigma(sub u) (i.e., stress difference between the upper yield point and the final flow stress achieved during prestraining), in conventional purity (CP-NiAl) and in high purity carbon-doped (NiAl-C) material first increased with a t(exp 2/3) relationship before reaching a plateau. This behavior suggests that a Cottrell locking mechanism is the cause for yield points in NiAl. In addition, positive y-axis intercepts were observed in plots of Delta sigma(sub u) versus t(exp 2/3) suggesting the operation of a Snoek mechanism. Analysis according to the Cottrell Bilby model of atmosphere formation around dislocations yields an activation energy for yield point return in the range 70 to 76 kJ/mol which is comparable to the activation energy for diffusion of interstitial impurities in bcc metals. It is, thus, concluded that the kinetics of static strain aging in NiAl are controlled by the locking of dislocations by Cottrell atmospheres of carbon atoms around dislocations.

Energy transfer and up-conversion in rare-earth doped dielectric crystals

NASA Astrophysics Data System (ADS)

Tkachuk, Alexandra M.

1996-01-01

In this work, we consider the prospects of development of the visible, and IR laser-diode pumped lasers based on TR3+-doped double-fluoride crystals. On the basis of estimates of the probabilities of competing non-radiative energy-transfer processes obtained from the experiments and theoretical calculations, the conclusions are drawn on the efficiency of up-conversion pumping and selfquenching of the upper TR3+ states excited by laser-diode emission. The effect of the host composition, dopant concentration, and temperature on the efficiency of up-conversion processes is demonstrated on the example of the YLF:Nd, YLF:Er, BaY2F8:Er, and BaY2F8:Er,Yb crystals. The transfer microparameters for most important cross-relaxation transitions are determined and the conclusions about interaction mechanisms are drawn.

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X.; Nilsson, D.; Danielsson, Ö.

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement showsmore » a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.« less

Nitrogen-doped porous carbon derived from biomass waste for high-performance supercapacitor.

PubMed

Ma, Guofu; Yang, Qian; Sun, Kanjun; Peng, Hui; Ran, Feitian; Zhao, Xiaolong; Lei, Ziqiang

2015-12-01

High capacitance property and low cost are the pivotal requirements for practical application of supercapacitor. In this paper, a low cost and high capacitance property nitrogen-doped porous carbon with high specific capacitance is prepared. The as-prepared nitrogen-doped porous carbon employing potato waste residue (PWR) as the carbon source, zinc chloride (ZnCl2) as the activating agent and melamine as nitrogen doping agent. The morphology and structure of the carbon materials are studied by scanning electron microscopy (SEM), N2 adsorption/desorption, X-ray diffraction (XRD) and Raman spectra. The surface area of the nitrogen-doped carbon which prepared under 700°C is found to be 1052m(2)/g, and the specific capacitance as high as 255Fg(-1) in 2M KOH electrolyte is obtained utilize the carbon as electrode materials. The electrode materials also show excellent cyclability with 93.7% coulombic efficiency at 5Ag(-1) current density of for 5000cycles. Copyright © 2015 Elsevier Ltd. All rights reserved.

Gas-sensing performances of Cd-doped ZnO nanoparticles synthesized by a surfactant-mediated method for n-butanol gas

NASA Astrophysics Data System (ADS)

Zhao, Rongjun; Li, Kejin; Wang, Zhezhe; Xing, Xinxin; Wang, Yude

2018-01-01

Zinc oxide nanoparticles with the different Cd doping contents were prepared by with a surfactant-mediated method in this paper. The effects of Cd doping on the gas sensing properties of the ZnO nanoparticles were studied. The morphology and microstructure of as-prepared samples were characterized by X-ray diffraction (XRD); scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM), respectively. The results reveal that all the products are the high crystalline hexagonal wurtzite ZnO crystal structure. The gas-sensing characteristics of the Cd doped ZnO nanoparticles for volatile organic compounds (VOCs) were investigated. At its optimal operation temperature of 300 °C, the sensing properties of the Cd doped ZnO nanoparticles for n-butanol gas exhibit a high-performance gas sensing performances including high gas response, good selectivity, response/recovery time, and repeatability as well as stability. Especially, its response reaches 130 for 100 ppm n-butanol of ZnO nanoparticles with 2.5% Cd doping. Those values demonstrate the potential of using as-prepared Cd doped ZnO nanoparticles for n-butanol gas detection, making them to be promising candidates for practical detectors to n-butanol gas. Apart from these, the mechanism related to the advanced properties was also investigated and presented.

Doping of two-dimensional MoS2 by high energy ion implantation

NASA Astrophysics Data System (ADS)

Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

2017-12-01

Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

Morphology and Doping Engineering of Sn-Doped Hematite Nanowire Photoanodes.

PubMed

Li, Mingyang; Yang, Yi; Ling, Yichuan; Qiu, Weitao; Wang, Fuxin; Liu, Tianyu; Song, Yu; Liu, Xiaoxia; Fang, Pingping; Tong, Yexiang; Li, Yat

2017-04-12

High-temperature activation has been commonly used to boost the photoelectrochemical (PEC) performance of hematite nanowires for water oxidation, by inducing Sn diffusion from fluorine-doped tin oxide (FTO) substrate into hematite. Yet, hematite nanowires thermally annealed at high temperature suffer from two major drawbacks that negatively affect their performance. First, the structural deformation reduces light absorption capability of nanowire. Second, this "passive" doping method leads to nonuniform distribution of Sn dopant in nanowire and limits the Sn doping concentration. Both factors impair the electrochemical properties of hematite nanowire. Here we demonstrate a silica encapsulation method that is able to simultaneously retain the hematite nanowire morphology even after high-temperature calcination at 800 °C and improve the concentration and uniformity of dopant distribution along the nanowire growth axis. The capability of retaining nanowire morphology allows tuning the nanowire length for optimal light absorption. Uniform distribution of Sn doping enhances the donor density and charge transport of hematite nanowire. The morphology and doping engineered hematite nanowire photoanode decorated with a cobalt oxide-based oxygen evolution reaction (OER) catalyst achieves an outstanding photocurrent density of 2.2 mA cm -2 at 0.23 V vs Ag/AgCl. This work provides important insights on how the morphology and doping uniformity of hematite photoanodes affect their PEC performance.

Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n-Type Ge.

PubMed

Xu, Chi; Fernando, Nalin S; Zollner, Stefan; Kouvetakis, John; Menéndez, José

2017-06-30

Phase-filling singularities in the optical response function of highly doped (>10^{19}  cm^{-3}) germanium are theoretically predicted and experimentally confirmed using spectroscopic ellipsometry. Contrary to direct-gap semiconductors, which display the well-known Burstein-Moss phenomenology upon doping, the critical point in the joint density of electronic states associated with the partially filled conduction band in n-Ge corresponds to the so-called E_{1} and E_{1}+Δ_{1} transitions, which are two-dimensional in character. As a result of this reduced dimensionality, there is no edge shift induced by Pauli blocking. Instead, one observes the "original" critical point (shifted only by band gap renormalization) and an additional feature associated with the level occupation discontinuity at the Fermi level. The experimental observation of this feature is made possible by the recent development of low-temperature, in situ doping techniques that allow the fabrication of highly doped films with exceptionally flat doping profiles.

Anisotropic strain relaxation of Si-doped metamorphic InAlAs graded buffers on InP

NASA Astrophysics Data System (ADS)

Gu, Yi; Zhang, Yonggang; Chen, Xingyou; Ma, Yingjie; Zheng, Yuanliao; Du, Ben; Zhang, Jian

2017-09-01

The effects of Si doping on the strain relaxation of InP-based metamorphic In x Al1-x As graded buffers have been investigated. The highly Si-doped sample shows an increased ridge period along the [1 1 0] direction in the cross-hatch morphology measured by atomic force microscope. X-ray diffraction reciprocal space mapping measurements reveal that the high Si-doping induced incomplete relaxation as well as inhomogeneous residual strain along the [1 -1 0] direction, which was also observed in micro-Raman measurements. The anisotropic strain relaxation is attributed to the Si-doping enhanced anisotropy of misfit dislocations along the orthogonal directions. The α-misfit dislocations along the [1 -1 0] direction are further delayed to generate in highly Si-doped InAlAs buffer, while the β-misfit dislocations along the [1 1 0] direction are not. These results supply useful suggestions on the design and demonstration of semiconductor metamorphic devices.

Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance

NASA Astrophysics Data System (ADS)

Li, Jinhua; Yuan, Ningyi; Jiang, Meiping; Kun, Li

2011-08-01

Vanadium Dioxide Polycrystalline Films with High Temperature Coefficient of Resistance(TCR) were fabricated by modified Ion Beam Enhanced Deposition(IBED) method. The TCR of the Un-doping VO2 was about -4%/K at room temperature after appropriate thermal annealing. The XRD results clearly showed that IBED polycrystalline VO2 films had a single [002] orientation of VO2(M). The TCR of 5at.%W and 7at.% Ta doped Vanadium Dioxide Polycrystalline Films were high up to -18%/K and -12%/K at room temperature, respectively. Using 7at.% Ta and 2at.% Ti co-doping, the TCR of the co-doped vanadium oxide film was -7%/K and without hysteresis during temperature increasing and decresing from 0-80°C. It should indicate that the W-doped vanadium dioxide films colud be used for high sensing IR detect and the Ta/Ti co-doped film without hysteresis is suitable for infrarid imaging application.

Conformal doping of topographic silicon structures using a radial line slot antenna plasma source

NASA Astrophysics Data System (ADS)

Ueda, Hirokazu; Ventzek, Peter L. G.; Oka, Masahiro; Horigome, Masahiro; Kobayashi, Yuuki; Sugimoto, Yasuhiro; Nozawa, Toshihisa; Kawakami, Satoru

2014-06-01

Fin extension doping for 10 nm front end of line technology requires ultra-shallow high dose conformal doping. In this paper, we demonstrate a new radial line slot antenna plasma source based doping process that meets these requirements. Critical to reaching true conformality while maintaining fin integrity is that the ion energy be low and controllable, while the dose absorption is self-limited. The saturated dopant later is rendered conformal by concurrent amorphization and dopant containing capping layer deposition followed by stabilization anneal. Dopant segregation assists in driving dopants from the capping layer into the sub silicon surface. Very high resolution transmission electron microscopy-Energy Dispersive X-ray spectroscopy, used to prove true conformality, was achieved. We demonstrate these results using an n-type arsenic based plasma doping process on 10 to 40 nm high aspect ratio fins structures. The results are discussed in terms of the different types of clusters that form during the plasma doping process.

Highly Microporous Nitrogen-doped Carbon Synthesized from Azine-linked Covalent Organic Framework and its Supercapacitor Function.

PubMed

Kim, Gayoung; Yang, Jun; Nakashima, Naotoshi; Shiraki, Tomohiro

2017-12-11

Porous carbons with nitrogen-doped (N-doped) structures are promising materials for advanced energy conversion and storage applications, including supercapacitors and fuel cell catalysts. In this study, microporous N-doped carbon was successfully fabricated through carbonization of covalent organic frameworks (COFs) with an azine-linked two-dimensional molecular network (ACOF1). In the carbonized ACOF1, micropores with diameters smaller than 1 nm are selectively formed, and a high specific surface area (1596 cm 2  g -1 ) is achieved. In addition, the highly porous structure with N-doped sites results in enhancement of the electrochemical capacitance. Detailed investigation for the micropore-forming process reveals that the formation of nitrogen gas during the thermal degradation of the azine bond contributes to the microporous structure formation. Therefore, the present direct carbonization approach using COFs allows the fabrication of microporous heteroatom-doped carbons, based on molecularly designed COFs, toward future electrochemical and energy applications. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Doped carbon-sulfur species nanocomposite cathode for Li--S batteries

DOEpatents

Wang, Donghai; Xu, Tianren; Song, Jiangxuan

2015-12-29

We report a heteroatom-doped carbon framework that acts both as conductive network and polysulfide immobilizer for lithium-sulfur cathodes. The doped carbon forms chemical bonding with elemental sulfur and/or sulfur compound. This can significantly inhibit the diffusion of lithium polysulfides in the electrolyte, leading to high capacity retention and high coulombic efficiency.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

PubMed

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-efficiency UV/optical/NIR detectors for large aperture telescopes and UV explorer missions: development of and field observations with delta-doped arrays

NASA Astrophysics Data System (ADS)

Nikzad, Shouleh; Jewell, April D.; Hoenk, Michael E.; Jones, Todd J.; Hennessy, John; Goodsall, Tim; Carver, Alexander G.; Shapiro, Charles; Cheng, Samuel R.; Hamden, Erika T.; Kyne, Gillian; Martin, D. Christopher; Schiminovich, David; Scowen, Paul; France, Kevin; McCandliss, Stephan; Lupu, Roxana E.

2017-07-01

Exciting concepts are under development for flagship, probe class, explorer class, and suborbital class NASA missions in the ultraviolet/optical spectral range. These missions will depend on high-performance silicon detector arrays being delivered affordably and in high numbers. To that end, we have advanced delta-doping technology to high-throughput and high-yield wafer-scale processing, encompassing a multitude of state-of-the-art silicon-based detector formats and designs. We have embarked on a number of field observations, instrument integrations, and independent evaluations of delta-doped arrays. We present recent data and innovations from JPL's Advanced Detectors and Systems Program, including two-dimensional doping technology, JPL's end-to-end postfabrication processing of high-performance UV/optical/NIR arrays and advanced coatings for detectors. While this paper is primarily intended to provide an overview of past work, developments are identified and discussed throughout. Additionally, we present examples of past, in-progress, and planned observations and deployments of delta-doped arrays.

Probing transport mechanisms of BaFe2As2 superconducting films and grain boundary junctions by noise spectroscopy

PubMed Central

Barone, C.; Romeo, F.; Pagano, S.; Adamo, M.; Nappi, C.; Sarnelli, E.; Kurth, F.; Iida, K.

2014-01-01

An important step forward for the understanding of high-temperature superconductivity has been the discovery of iron-based superconductors. Among these compounds, iron pnictides could be used for high-field magnet applications, resulting more advantageous over conventional superconductors, due to a high upper critical field as well as its low anisotropy at low temperatures. However, the principal obstacle in fabricating high quality superconducting wires and tapes is given by grain boundaries. In order to study these effects, the dc transport and voltage-noise properties of Co-doped BaFe2As2 superconducting films with artificial grain boundary junctions have been investigated. A specific procedure allows the separation of the film noise from that of the junction. While the former shows a standard 1/f behaviour, the latter is characterized by an unconventional temperature-dependent multi-Lorentzian voltage-spectral density. Moreover, below the film superconducting critical temperature, a peculiar noise spectrum is found for the grain boundary junction. Possible theoretical interpretation of these phenomena is proposed. PMID:25145385

Preparation and enhanced infrared response properties of ordered W-doped VO2 nanowire array

NASA Astrophysics Data System (ADS)

Xie, Bing He; Fu, Wen Biao; Fei, Guang Tao; Xu, Shao Hui; Gao, Xu Dong; Zhang, Li De

2018-04-01

In this article, pure and tungsten-doped (W-doped) highly ordered two-dimensional (2D) vanadium dioxide (VO2) nanowire arrays were successfully prepared by a hydrothermal treatment, followed by a self-assembly progress and the in-situ high temperature treatment. The infrared photodetector devices based on monoclinic VO2 (VO2(M)) and W-doped VO2(M) nanowires were comparatively studied . It was found that the device based on W-doped VO2(M) nanowires exhibits a rapid infrared response and an enhanced photoelectric responsivity of 21.4 mA/W under the incident infrared light intensity of 280 mW/cm2, which is nearly two orders of magnitude superior to pure VO2(M) nanowire array. Our experimental results provided a direct and convenient path for design of future high-performance photodetector devices.

Synthesis of phosphorus-doped graphene and its wide potential window in aqueous supercapacitors.

PubMed

Wen, Yangyang; Wang, Bei; Huang, Congcong; Wang, Lianzhou; Hulicova-Jurcakova, Denisa

2015-01-02

Phosphorus-doped (P-doped) graphene with the P doping level of 1.30 at % was synthesized by annealing the mixture of graphene and phosphoric acid. The presence of P was confirmed by elemental mapping and X-ray photoelectron spectroscopy, while the morphology of P-doped graphene was revealed by using scanning electron microscopy and transmission electron microscopy. To investigate the effect of P doping, the electrochemical properties of P-doped graphene were tested as a supercapacitor electrode in an aqueous electrolyte of 1 M H2 SO4. The results showed that doping of P in graphene exhibited significant improvement in terms of specific capacitance and cycling stability, compared with undoped graphene electrode. More interestingly, the P-doped graphene electrode can survive at a wide voltage window of 1.7 V with only 3 % performance degradation after 5000 cycles at a current density of 5 A g(-1), providing a high energy density of 11.64 Wh kg(-1) and a high power density of 831 W kg(-1). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dielectric characteristics of Mn-doped LaTiO3+δ ceramics

NASA Astrophysics Data System (ADS)

Chen, Yan; Cui, Yimin

A series of ceramic composites of Mn-doped La1- x MnxTiO3+ δ and LaMnxTi1- x O3+ δ (x = 0.1, 0.2) were synthesized by conventional solid-state reaction method. The low-frequency complex dielectric properties of the composites were investigated as functions of temperature (77 K <= T <= 360 K) and frequency (100 Hz <= f <= 1 MHz), respectively. The dielectric constant of A-site doped samples is higher than that of B-site doped samples. The loss tangent of low doped samples is much less than that of high doped samples. The A-site doped composites exhibit intrinsic dielectric response with a dielectric constant of 40 in the temperature below 250 K. Interestingly, the dielectric constants of B-site doped ceramics increase slightly in the temperature range from 77 to 360 K. And it is clearly observed that extraordinarily high dielectric loss tangent ( 6) appear at low frequency (100 Hz) in LaMn0.2Ti0.8O3+ δ , which is 8 times larger than that of LaMn0.1Ti0.9O3+ δ , which indicates that the doped content can affect the intrinsic dielectric characteristics significantly.

Biomineralization-Inspired Synthesis of Cerium-Doped Carbonaceous Nanoparticles for Highly Hydroxyl Radical Scavenging Activity

NASA Astrophysics Data System (ADS)

Zou, Shenqiang; Zhu, Xiaofang; Zhang, Lirong; Guo, Fan; Zhang, Miaomiao; Tan, Youwen; Gong, Aihua; Fang, Zhengzou; Ju, Huixiang; Wu, Chaoyang; Du, Fengyi

2018-03-01

Cerium oxide nanoparticles recently have received extensive attention in biomedical applications due to their excellent anti-oxidation performance. In this study, a simple, mild, and green approach was developed to synthesize cerium-doped carbonaceous nanoparticles (Ce-doped CNPs) using bio-mineralization of bull serum albumin (BSA) as precursor. The resultant Ce-doped CNPs exhibited uniform and ultrasmall morphology with an average size of 14.7 nm. XPS and FTIR results revealed the presence of hydrophilic group on the surface of Ce-doped CNPs, which resulted in excellent dispersity in water. The CCK-8 assay demonstrated that Ce-doped CNPs possessed favorable biocompatibility and negligible cytotoxicity. Using H2O2-induced reactive oxygen species (ROS) as model, Ce-doped CNPs showed highly hydroxyl radical scavenging capability. Furthermore, flow cytometry and live-dead staining results indicated that Ce-doped CNPs protected cells from H2O2-induced damage in a dose-dependent effect, which provided a direct evidence for anti-oxidative performance. These findings suggest that Ce-doped CNPs as novel ROS scavengers may provide a potential therapeutic prospect in treating diseases associated with oxidative stress.

Tuning the morphology, stability and photocatalytic activity of TiO{sub 2} nanocrystal colloids by tungsten doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Haiping; Liao, Jianhua; School of Pharmaceutical Sciences, Gannan Medical University, Ganzhou, Jiangxi 341000

2014-03-01

Graphical abstract: - Highlights: • W{sup 6+}-doped TiO{sub 2} nanocrystal colloids were prepared by hydrothermal methods. • The properties of TiO{sub 2} nanocrystal colloids can be tuned by tungsten doping. • W{sup 6+}-doped TiO{sub 2} nanocrystal colloids show higher stability and dispersity. • W{sup 6+}-doped TiO{sub 2} nanocrystal colloids show higher photocatalytic activity. - Abstract: The effects of tungsten doping on the morphology, stability and photocatalytic activity of TiO{sub 2} nanocrystal colloids were investigated. The nanostructure, chemical state of Ti, W, O, and the properties of tungsten doped TiO{sub 2} samples were investigated carefully by TEM, XRD, XPS, UV–vis, PLmore » and photocatalytic degradation experiments. And the structure–activity relationship was discussed according to the analysis and measurement results. The analysis results reveal that the morphology, zeta potential and photocatalytic activity of TiO{sub 2} nanocrystals can be easily tuned by changing the tungsten doping concentration. The tungsten doped TiO{sub 2} colloid combines the characters of high dispersity and high photocatalytic activity.« less

Ferromagnetism in doped or undoped spintronics nanomaterials

NASA Astrophysics Data System (ADS)

Qiang, You

2010-10-01

Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

Picosecond passively mode-locked mid-infrared fiber laser

NASA Astrophysics Data System (ADS)

Wei, C.; Zhu, X.; Norwood, R. A.; Kieu, K.; Peyghambarian, N.

2013-02-01

Mode-locked mid-infrared (mid-IR) fiber lasers are of increasing interest due to their many potential applications in spectroscopic sensors, infrared countermeasures, laser surgery, and high-efficiency pump sources for nonlinear wavelength convertors. Er3+-doped ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF) fiber lasers, which can emit mid-IR light at 2.65-2.9 μm through the transition from the upper energy level 4I11/2 to the lower laser level 4I13/2, have attracted much attention because of their broad emission range, high optical efficiency, and the ready availability of diode pump lasers at the two absorption peaks of Er3+ ions (975 nm and 976 nm). In recent years, significant progress on high power Er3+- doped ZBLAN fiber lasers has been achieved and over 20 watt cw output at 2.8 μm has been demonstrated; however, there has been little progress on ultrafast mid-IR ZBLAN fiber lasers to date. We report a passively mode-locked Er3+- doped ZBLAN fiber laser in which a Fe2+:ZnSe crystal was used as the intracavity saturable absorber. Fe2+:ZnSe is an ideal material for mid-IR laser pulse generation because of its large saturable absorption cross-section and small saturation energy along with the excellent opto-mechanical (damage threshold ~2 J/cm2) and physical characteristics of the crystalline ZnSe host. A 1.6 m double-clad 8 mol% Er3+-doped ZBLAN fiber was used in our experiment. The fiber core has a diameter of 15 μm and a numerical aperture (NA) of 0.1. The inner circular cladding has a diameter of 125 μm and an NA of 0.5. Both continuous-wave and Q-switched mode-locking pulses at 2.8 μm were obtained. Continuous-wave mode locking operation with a pulse duration of 19 ps and an average power of 51 mW were achieved when a collimated beam traversed the Fe2+:ZnSe crystal. When the cavity was modified to provide a focused beam at the Fe2+:ZnSe crystal, Q-switched mode-locked operation with a pulse duration of 60 ps and an average power of 4.6 mW was achieved. More powerful and narrower pulses are expected if the dispersion of the cavity can be properly managed.

High-Level Heteroatom Doped Two-Dimensional Carbon Architectures for Highly Efficient Lithium-Ion Storage.

PubMed

Wang, Zhijie; Wang, Yanyan; Wang, Wenhui; Yu, Xiaoliang; Lv, Wei; Xiang, Bin; He, Yan-Bing

2018-01-01

In this work, high-level heteroatom doped two-dimensional hierarchical carbon architectures (H-2D-HCA) are developed for highly efficient Li-ion storage applications. The achieved H-2D-HCA possesses a hierarchical 2D morphology consisting of tiny carbon nanosheets vertically grown on carbon nanoplates and containing a hierarchical porosity with multiscale pore size. More importantly, the H-2D-HCA shows abundant heteroatom functionality, with sulfur (S) doping of 0.9% and nitrogen (N) doping of as high as 15.5%, in which the electrochemically active N accounts for 84% of total N heteroatoms. In addition, the H-2D-HCA also has an expanded interlayer distance of 0.368 nm. When used as lithium-ion battery anodes, it shows excellent Li-ion storage performance. Even at a high current density of 5 A g -1 , it still delivers a high discharge capacity of 329 mA h g -1 after 1,000 cycles. First principle calculations verifies that such unique microstructure characteristics and high-level heteroatom doping nature can enhance Li adsorption stability, electronic conductivity and Li diffusion mobility of carbon nanomaterials. Therefore, the H-2D-HCA could be promising candidates for next-generation LIB anodes.

Influence of the ``second gap'' on the optical absorption of transparent conducting oxides

NASA Astrophysics Data System (ADS)

Ha, Viet-Anh; Waroquiers, David; Rignanese, Gian-Marco; Hautier, Geoffroy

Transparent conducting oxides (TCOs) are critical to many technologies (e.g., thin-film solar cells, flat-panel displays or organic light-emitting diodes). TCOs are heavily doped (n or p-type) oxides that satisfy many design criteria such as high transparency to visible light (i.e., a band gap > 3 eV), high concentration and mobility of carriers (leading to high conductivity), ... In such (highly doped) systems, optical transitions from the conduction band minimum to higher energy bands in n-type or from lower energy bands to the valence band maximum in p-type are possible and can degrade transparency. In fact, it has been claimed that a high energy (> 3eV) for any of these transitions made possible by doping, commonly referred as a high ``second gap'', is a necessary design criterion for high performance TCOs. Here, we study the influence of this second gap on the transparency of doped TCOs by using ab initio calculations within the random phase approximation (RPA) for several well-known p-type and n-type TCOs. Our work highlights how the second gap affects the transparency of doped TCOs, shining light on more accurate design criteria for high performance TCOs.

High-Level Heteroatom Doped Two-Dimensional Carbon Architectures for Highly Efficient Lithium-Ion Storage

NASA Astrophysics Data System (ADS)

Wang, Zhijie; Wang, Yanyan; Wang, Wenhui; Yu, Xiaoliang; Lv, Wei; Xiang, Bin; He, Yan-Bing

2018-04-01

In this work, high-level heteroatom doped two-dimensional hierarchical carbon architectures (H-2D-HCA) are developed for highly efficient Li-ion storage applications. The achieved H-2D-HCA possesses a hierarchical 2D morphology consisting of tiny carbon nanosheets vertically grown on carbon nanoplates and containing a hierarchical porosity with multiscale pore size. More importantly, the H-2D-HCA shows abundant heteroatom functionality, with sulfur (S) doping of 0.9 % and nitrogen (N) doping of as high as 15.5 %, in which the electrochemically active N accounts for 84 % of total N heteroatoms. In addition, the H-2D-HCA also has an expanded interlayer distance of 0.368 nm. When used as lithium-ion battery anodes, it shows excellent Li-ion storage performance. Even at a high current density of 5 A g-1, it still delivered a high discharge capacity of 329 mA h g-1 after 1000 cycles. First principle calculations verified that such unique microstructure characteristics and high-level heteroatom doping nature can enhance Li adsorption stability, electronic conductivity and Li diffusion mobility of carbon nanomaterials. Therefore, the H-2D-HCA could be promising candidates for next-generation LIB anodes.

Quantum oscillations from the reconstructed Fermi surface in electron-doped cuprate superconductors

NASA Astrophysics Data System (ADS)

Higgins, J. S.; Chan, M. K.; Sarkar, Tarapada; McDonald, R. D.; Greene, R. L.; Butch, N. P.

2018-04-01

We have studied the electronic structure of electron-doped cuprate superconductors via measurements of high-field Shubnikov–de Haas oscillations in thin films. In optimally doped Pr2‑x Ce x CuO4±δ and La2‑x Ce x CuO4±δ , quantum oscillations indicate the presence of a small Fermi surface, demonstrating that electronic reconstruction is a general feature of the electron-doped cuprates, despite the location of the superconducting dome at very different doping levels. Negative high-field magnetoresistance is correlated with an anomalous low-temperature change in scattering that modifies the amplitude of quantum oscillations. This behavior is consistent with effects attributed to spin fluctuations.

Humidity sensing properties of Al-doped zinc oxide coating films

NASA Astrophysics Data System (ADS)

Saidi, S. A.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Yusoff, M. M.; Sin, N. D. Md.; Zoolfakar, A. S.; Khusaimi, Z.; Rusop, M.

2018-05-01

Humidity sensor was fabricated using Al-doped zinc oxide (ZnO) coating films through spin-coating at room temperature. The sensing mechanism was discussed based on their nanostructures, such as surface area and porous nanostructures. Surface area and water adsorption are an important component in the low humidity, while at high humidity, porous nanostructures and capillary condensation become important. The results showed that the sensitivity of the Al-doped ZnO coating improved compared to that of the Al-doped ZnO nanorod arrays, with values of 7.38 at 40% to 90%RH (Relative humidity). All these results indicated that Al-doped ZnO coating had high potential for humidity-sensor applications.

Fabrication of water-dispersible and highly conductive PSS-doped PANI/graphene nanocomposites using a high-molecular weight PSS dopant and their application in H2S detection

NASA Astrophysics Data System (ADS)

Cho, Sunghun; Lee, Jun Seop; Jun, Jaemoon; Kim, Sung Gun; Jang, Jyongsik

2014-11-01

This work describes the fabrication of poly(4-styrenesulfonic acid)-doped polyaniline/graphene (PSS-doped PANI/graphene) nanocomposites and their use as sensing elements for hydrogen sulfide (H2S) detection. PSS with a weight-average molecular weight (Mw) of 1.96 × 106 was synthesized using low-temperature free-radical polymerization. The PSS was used as both a doping agent and a binding agent for the polymerization of aniline monomers in a biphasic system (water-chloroform) at -50 °C. The high Mw of PSS resulted in relatively large particle sizes and smooth surfaces of the PSS-doped PANI. These physical characteristics, in turn, resulted in low interparticle resistance and high conductivity. In addition, the PSS allowed homogeneous dispersion of reduced graphene sheets through electrostatic repulsion. The prepared PSS-doped PANI/graphene solutions showed good compatibility with flexible poly(ethylene terephthalate) (PET) substrates, making them suitable for flexible sensor electrodes. Changes in the charge-transport properties, such as protonation level, conjugation length, crystalline structure, and charge-transfer resistance, of the electrode materials were the main factors influencing the electrical and sensor performance of the PSS-doped PANI-based electrodes. PSS-doped PANI/graphene composites containing 30 wt% graphene showed the highest conductivity (168.4 S cm-1) and the lowest minimum detection level (MDL) for H2S gas (1 ppm). This result is consistent with the observed improvements in charge transport in the electrode materials via strong π-π stacking interactions between the PANI and the graphene sheets.This work describes the fabrication of poly(4-styrenesulfonic acid)-doped polyaniline/graphene (PSS-doped PANI/graphene) nanocomposites and their use as sensing elements for hydrogen sulfide (H2S) detection. PSS with a weight-average molecular weight (Mw) of 1.96 × 106 was synthesized using low-temperature free-radical polymerization. The PSS was used as both a doping agent and a binding agent for the polymerization of aniline monomers in a biphasic system (water-chloroform) at -50 °C. The high Mw of PSS resulted in relatively large particle sizes and smooth surfaces of the PSS-doped PANI. These physical characteristics, in turn, resulted in low interparticle resistance and high conductivity. In addition, the PSS allowed homogeneous dispersion of reduced graphene sheets through electrostatic repulsion. The prepared PSS-doped PANI/graphene solutions showed good compatibility with flexible poly(ethylene terephthalate) (PET) substrates, making them suitable for flexible sensor electrodes. Changes in the charge-transport properties, such as protonation level, conjugation length, crystalline structure, and charge-transfer resistance, of the electrode materials were the main factors influencing the electrical and sensor performance of the PSS-doped PANI-based electrodes. PSS-doped PANI/graphene composites containing 30 wt% graphene showed the highest conductivity (168.4 S cm-1) and the lowest minimum detection level (MDL) for H2S gas (1 ppm). This result is consistent with the observed improvements in charge transport in the electrode materials via strong π-π stacking interactions between the PANI and the graphene sheets. Electronic supplementary information (ESI) available: FE-SEM images of PSS-doped PANI/graphene nanocomposites and graphene sheets, FT-IR spectra of PSS with different Mw, XRD patterns of PSS-doped PANI polymerized with different Mw of PSS, FT-IR spectra of GO, RGO, PSS-coated GO, and PSS-coated RGO, fully XPS scanned spectra of PSS-doped PANI/graphene nanocomposites, cyclic voltammogram of PSS-doped PANI/graphene nanocomposites at different scan rates (10 to 50 mV-1), and I-V characteristics of PSS-doped PANI/graphene nanocomposites with a thickness of 5 μm. See DOI: 10.1039/c4nr04413d

An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes.

PubMed

Kim, Jong Su; Kim, Beom Joon; Choi, Young Jin; Lee, Moo Hyung; Kang, Moon Sung; Cho, Jeong Ho

2016-06-01

High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

From two-dimension to one-dimension: the curvature effect of silicon-doped graphene and carbon nanotubes for oxygen reduction reaction.

PubMed

Zhang, Peng; Hou, Xiuli; Mi, Jianli; He, Yanqiong; Lin, Lin; Jiang, Qing; Dong, Mingdong

2014-09-07

For the goal of practical industrial development of fuel cells, inexpensive, sustainable, and highly efficient electrocatalysts for oxygen reduction reactions (ORR) are highly desirable alternatives to platinum (Pt) and other rare metals. In this work, based on density functional theory, silicon (Si)-doped carbon nanotubes (CNTs) and graphene as metal-free, low cost, and high-performance electrocatalysts for ORR are studied systematically. It is found that the curvature effect plays an important role in the adsorption and reduction of oxygen. The adsorption of O2 becomes weaker as the curvature varies from positive values (outside CNTs) to negative values (inside CNTs). The free energy change of the rate-determining step of ORR on the concave inner surface of Si-doped CNTs is smaller than that on the counterpart of Si-doped graphene, while that on the convex outer surface of Si-doped CNTs is larger than that on Si-doped graphene. Uncovering this new ORR mechanism on silicon-doped carbon electrodes is significant as the same principle could be applied to the development of various other metal-free efficient ORR catalysts for fuel cell applications.

High carrier concentration ZnO nanowire arrays for binder-free conductive support of supercapacitors electrodes by Al doping.

PubMed

Zheng, Xin; Sun, Yihui; Yan, Xiaoqin; Sun, Xu; Zhang, Guangjie; Zhang, Qian; Jiang, Yaru; Gao, Wenchao; Zhang, Yue

2016-12-15

Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. Here, we prepared in situ Al-doped ZnO nanowire arrays by using continuous flow injection (CFI) hydrothermal method to promote the conductivity. This reasonable method offers highly stable precursor concentration for doping that effectively avoid the appearance of the low conductivity ZnO nanosheets. Benefit from this, three orders of magnitude rise of the carrier concentration from 10 16 cm -3 to 10 19 cm -3 can be achieved compared with the common hydrothermal (CH) mothed in Mott-Schottky measurement. Possible effect of Al-doping was discussed by first-principle theory. On this basis, Al-doped ZnO nanowire arrays was developed as a binder-free conductive support for supercapacitor electrodes and high capacitance was triggered. It is owing to the dramatically decreased transfer resistance induced by the growing free-moving electrons and holes. Our results have a profound significance not merely in the controlled synthesis of other doping nanomaterials by co-precipitation method but also in the application of binder-free energy materials or other materials. Copyright © 2016 Elsevier Inc. All rights reserved.

Preparation of Ce- and La-Doped Li4Ti5O12 Nanosheets and Their Electrochemical Performance in Li Half Cell and Li4Ti5O12/LiFePO4 Full Cell Batteries

PubMed Central

Qin, Meng; Li, Yueming; Lv, Xiao-Jun

2017-01-01

This work reports on the synthesis of rare earth-doped Li4Ti5O12 nanosheets with high electrochemical performance as anode material both in Li half and Li4Ti5O12/LiFePO4 full cell batteries. Through the combination of decreasing the particle size and doping by rare earth atoms (Ce and La), Ce and La doped Li4Ti5O12 nanosheets show the excellent electrochemical performance in terms of high specific capacity, good cycling stability and excellent rate performance in half cells. Notably, the Ce-doped Li4Ti5O12 shows good electrochemical performance as anode in a full cell which LiFePO4 was used as cathode. The superior electrochemical performance can be attributed to doping as well as the nanosized particle, which facilitates transportation of the lithium ion and electron transportation. This research shows that the rare earth doped Li4Ti5O12 nanosheets can be suitable as a high rate performance anode material in lithium-ion batteries. PMID:28632167

Low temperature thermoelectric properties of p-type doped single-crystalline SnSe

NASA Astrophysics Data System (ADS)

Wang, Si; Hui, Si; Peng, Kunling; Bailey, Trevor P.; Liu, Wei; Yan, Yonggao; Zhou, Xiaoyuan; Tang, Xinfeng; Uher, Ctirad

2018-04-01

SnSe single crystals have been widely studied lately as a result of their record high ZT and controversial low thermal conductivity. Much research has focused on the high-temperature properties of single crystals and polycrystalline SnSe, but few studies were carried out on the low-temperature properties of doped single-crystalline SnSe. To study the mechanism of the charge carrier and phonon scattering, and to eliminate the ambiguity of the high temperature thermal conductivity measurement, we performed low temperature transport characterization of Na-doped and Ag-doped single-crystalline SnSe by a longitudinal steady-state technique. The electronic transport property measurements suggest that Na is a more efficient p-type dopant in SnSe than Ag. In the thermal conductivity data, we observe pronounced dielectric peak around 10 K with magnitude dependent on the doping level. In the p-type doped samples, we found that our room temperature lattice thermal conductivities (>1.74 W m-1 K-1) are in general higher than those previously reported. Based on these findings, our study implies that the lattice thermal conductivity values of doped and pure single-crystalline SnSe were underestimated.

Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties

NASA Astrophysics Data System (ADS)

Leroux, M.; Vennéguès, P.; Dalmasso, S.; de Mierry, P.; Lorenzini, P.; Damilano, B.; Beaumont, B.; Gibart, P.; Massies, J.

2004-07-01

A detailed transmission electron microscopy study is performed on the pyramidal inversion domains that appear in highly Mg-doped GaN grown by metalorganics vapor phase epitaxy or by the high-pressure, high-temperature method. From a comparison between high resolution images of the inversion domain boundaries and simulations using different atomic models, we conclude that both basal and inclined domain boundaries are likely formed of a monomolecular layer of the definite compound Mg{3}N{2}. We show that, due to their high concentration, the formation of these defects may account for auto-compensation in Mg-doped GaN. We also show that the local band bending induced by the polarity inversion due to these defects can be at the origin of the blue luminescence of highly Mg-doped GaN, always observed when nanometric pyramidal inversion domains are also present.

Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

PubMed

Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

2015-12-09

Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

Temperature and doping dependence of the high-energy kink in cuprates.

PubMed

Zemljic, M M; Prelovsek, P; Tohyama, T

2008-01-25

It is shown that spectral functions within the extended t-J model, evaluated using the finite-temperature diagonalization of small clusters, exhibit the high-energy kink in single-particle dispersion consistent with recent angle-resolved photoemission results on hole-doped cuprates. The kink and waterfall-like features persist up to large doping and to temperatures beyond J; hence, the origin can be generally attributed to strong correlations and incoherent hole propagation at large binding energies. In contrast, our analysis predicts that electron-doped cuprates do not exhibit these phenomena in photoemission.

High on/off ratios in bilayer graphene field effect transistors realized by surface dopants.

PubMed

Szafranek, B N; Schall, D; Otto, M; Neumaier, D; Kurz, H

2011-07-13

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and sensor applications. So far the operation of bilayer graphene-based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper, we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low-temperature measurements indicate that the increased on/off ratio is caused by the opening of a mobility gap.

A supercell approach to the doping effect on the thermoelectric properties of SnSe.

PubMed

Suzuki, Yasumitsu; Nakamura, Hisao

2015-11-28

We study the thermoelectric properties of tin selenide (SnSe) by using first-principles calculations coupled with the Boltzmann transport theory. A recent experimental study showed that SnSe gives an unprecedented thermoelectric figure of merit ZT of 2.6 ± 0.3 in the high-temperature (>750 K) phase, while ZT in the low-temperature phase (<750 K) is much smaller than that of the high-temperature phase. Here we explore the possibility of increasing ZT in the low-temperature regime by carrier doping. For this purpose, we adopt a supercell approach to model the doped systems. We first examine the validity of the conventional rigid-band approximation (RBA), and then investigate the thermoelectric properties of Ag or Bi doped SnSe as p- or n-type doped materials using our supercell method. We found that both types of doping improve ZT and/or the power factor of the low-temperature phase SnSe, but only after the adjustment of the appropriate doping level is achieved.

High Thermoelectric Power Factor of a Diketopyrrolopyrrole-Based Low Bandgap Polymer via Finely Tuned Doping Engineering

PubMed Central

Jung, In Hwan; Hong, Cheon Taek; Lee, Un-Hak; Kang, Young Hun; Jang, Kwang-Suk; Cho, Song Yun

2017-01-01

We studied the thermoelectric properties of a diketopyrrolopyrrole-based semiconductor (PDPP3T) via a precisely tuned doping process using Iron (III) chloride. In particular, the doping states of PDPP3T film were linearly controlled depending on the dopant concentration. The outstanding Seebeck coefficient of PDPP3T assisted the excellent power factors (PFs) over 200 μW m−1K−2 at the broad range of doping concentration (3–8 mM) and the maximum PF reached up to 276 μW m−1K−2, which is much higher than that of poly(3-hexylthiophene), 56 μW m−1K−2. The high-mobility of PDPP3T was beneficial to enhance the electrical conductivity and the low level of total dopant volume was important to maintain high Seebeck coefficients. In addition, the low bandgap PDPP3T polymer effiectively shifted its absorption into near infra-red area and became more colorless after doping, which is great advantage to realize transparent electronic devices. Our results give importance guidance to develop thermoelectric semiconducting polymers and we suggest that the use of low bandgap and high-mobility polymers, and the accurate control of the doping levels are key factors for obtaining the high thermoelectric PF. PMID:28317929

Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance

PubMed Central

Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

2016-01-01

Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg−1, a high reversible specific capacity of 1055.20 mAhg−1 after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg−1 when cycled at the current density of 1000 mAg−1, indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries. PMID:27296103

Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

2017-12-01

Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

Yb-doped large-mode-area laser fiber fabricated by halide-gas-phase-doping technique

NASA Astrophysics Data System (ADS)

Peng, Kun; Wang, Yuying; Ni, Li; Wang, Zhen; Gao, Cong; Zhan, Huan; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

2015-06-01

In this manuscript, we designed a rare-earth-halide gas-phase-doping setup to fabricate a large-mode-area fiber for high power laser applications. YbCl3 and AlCl3 halides are evaporated, carried respectively and finally mixed with usual host gas material SiCl4 at the hot zone of MCVD system. Owing to the all-gas-phasing reaction process and environment, the home-made Yb-doped fiber preform has a homogeneous large core and modulated refractive index profile to keep high beam quality. The drawn fiber core has a small numerical aperture of 0.07 and high Yb concentration of 9500 ppm. By using a master oscillator power amplifier system, nearly kW-level (951 W) laser output power was obtained with a slope efficiency of 83.3% at 1063.8 nm, indicating the competition and potential of the halide-gas-phase-doping technique for high power laser fiber fabrication.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi.

PubMed

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-03-23

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge 20 Te 77 Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge 20 Te 77 Se₃) 100- x M x (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge 20 Te 77 Se₃) 100- x Bi x ( x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm -1 K -1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

PubMed Central

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-01-01

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses. PMID:28772687

Enhanced electrochemical capacitance and oil-absorbability of N-doped graphene aerogel by using amino-functionalized silica as template and doping agent

NASA Astrophysics Data System (ADS)

Du, Yongxu; Liu, Libin; Xiang, Yu; Zhang, Qiang

2018-03-01

The development of novel energy storage devices with high power density and energy density is highly desired. However, as a promising material, the strong π-π interaction of graphene inhibits its applications. Herein, we provide a new approach that amino-functionalized silica are used as both templates to prevent the restacking of the graphene sheets and doping agents simultaneously. The microstructures, porous properties and chemical composition of the resulted N-doped reduced graphene oxide (RGO) aerogels, characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman, X-ray photoelectron spectroscopy and Brunauer-Emmett-Teller measurement, indicate that the amount of SiO2-NH2 has profound effects on the surface area and carbon activity of the graphene sheets. Benefiting from the large specific surface area of 481.8 m2 g-1, low series resistances and high nitrogen doping content (4.4 atom%), the as-fabricated 3D hierarchical porous N-doped RGO aerogel electrode exhibits outstanding electrochemical performance in aqueous and organic electrolyte, such as ultrahigh specific capacitances of 350 F g-1 at a current density of 1 A g-1 and excellent reversibility with a cycling efficiency of 88% after 10000 cycles. In addition, the N-doped RGO aerogels possess high oil-absorbability with long recyclability.

Methanesulfonic acid-assisted synthesis of N/S co-doped hierarchically porous carbon for high performance supercapacitors

NASA Astrophysics Data System (ADS)

Huo, Silu; Liu, Mingquan; Wu, Linlin; Liu, Mingjie; Xu, Min; Ni, Wei; Yan, Yi-Ming

2018-05-01

Nitrogen and sulfur co-doped carbons are considered as electrode materials for high performance supercapacitors, while their further development is still limited by complicated synthesis procedure, unsatisfied structure and low energy density. Developing a simple synthetic strategy to obtain rationally structured carbon materials and high supercapacitor performance is remaining a grand challenge. Herein, we describe the synthesis of nitrogen and sulfur co-doped hierarchical porous carbons as high performance supercapacitors electrode by a methanesulfonic acid-assisted one-step carbonization and activation of the freeze-dried precursors mixture. The as-prepared carbon material not only exhibits ideally hierarchical pores, but also realizes uniform nitrogen and sulfur co-doping. In 6.0 M KOH electrolyte, the material can achieve a high specific capacitance of 272 F g-1 at 1.0 A g-1 and a promising rate performance retaining 172 F g-1 even at 100 A g-1. Moreover, a fabricated symmetric supercapacitor based on as-prepared nitrogen and sulfur co-doped hierarchical porous carbon delivers high energy densities of 12.4 W h kg-1 and 8.0 W h kg-1 in 6.0 M KOH liquid and KOH/PVA solid-state electrolytes, respectively. This work presents a simple and effective methanesulfonic acid-assisted approach for mass production of heteroatomic doping hierarchical porous carbons for future energy storage applications.

Fabrication and electrochemistry characteristics of nickel-doped diamond-like carbon film toward applications in non-enzymatic glucose detection

NASA Astrophysics Data System (ADS)

Liu, Chi-Wen; Chen, Wei-En; Sun, Yin Tung Albert; Lin, Chii-Ruey

2018-04-01

This research work focused on the fabrication of nickel-doped diamond-like carbon (DLC) films and their characteristics including of surface morphology, microstructure, and electrochemical aiming at applications in non-enzymatic glucose detection. Novel nanodiamond target was employed in unbalanced magnetron radio-frequency co-sputtering process to prepared high quality Ni-doped DLC thin film at room temperature. TEM analysis reveals a highly uniform distribution of Ni crystallites in amorphous carbon matrix with fraction ranged from 3 to 11.5 at.% which is considered as active sites for the glucose detection. Our cyclic voltammetry measurements using 0.1 M H2SO4 solution demonstrated that the as-prepared Ni-doped DLC films possess large electrochemical potential window of 2.12 V, and this was also observed to be significantly reduced at high Ni doping level owing to lower sp3 fraction. The non-enzymatic glucose detection investigation indicates that the Ni-doped DLC thin film electrode prepared under 7 W of DC sputtering power on Ni target possesses good detecting performance, high stability, and high sensitivity to glucose concentration up to 10 mM, even with the existence of uric acid and ascorbic acid. The peak current was observed to be proportional to glucose concentration and scanning rate, demonstrating highly reversibility redox process of the film electrode and glucose.

Effect of doping on the forward current-transport mechanisms in a metal-insulator-semiconductor contact to INP:ZN grown by metal organic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Cova, P.; Singh, A.; Medina, A.; Masut, R. A.

1998-04-01

A detailed study of the effect of doping density on current transport was undertaken in Au metal-insulator-semiconductor (MIS) contacts fabricated on Zn-doped InP layers grown by metal organic vapor phase epitaxy. A recently developed method was used for the simultaneous analysis of the current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics in an epitaxial MIS diode which brings out the contributions of different current-transport mechanisms to the total current. I- V and high-frequency C- V measurements were performed on two MIS diodes at different temperatures in the range 220-395 K. The barrier height at zero bias of Au/InP:Zn MIS diodes, φ0 (1.06 V±10%), was independent both of the Zn-doping density and of the surface preparation. The interface state density distribution Nss as well as the thickness of the oxide layer (2.2±15% nm) unintentionally grown before Au deposition were independent of the Zn-doping concentration in the range 10 16< NA<10 17 cm -3; not so the effective potential barrier χ of the insulator layer and the density of the mid-gap traps. χ was much lower for the highly-doped sample. Our results indicate that at high temperatures, independent of the Zn-doping concentration, the interfacial layer-thermionic (ITE) and interfacial layer-diffusion (ID) mechanisms compete with each other to control the current transport. At intermediate temperatures, however, ITE and ID will no longer be the only dominant mechanisms in the MIS diode fabricated on the highly-doped sample. In this case, the assumption of a generation-recombination current permits a better fit to the experimental data. Analysis of the data suggests that the generation-recombination current, observed only in the highly-doped sample, is associated with an increase in the Zn-doping density. From the forward I- V data for this diode we obtained the energy level (0.60 eV from the conduction band) for the most effective recombination centers.

Electrically tunable infrared metamaterial devices

DOEpatents

Brener, Igal; Jun, Young Chul

2015-07-21

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

NASA Astrophysics Data System (ADS)

Tomizawa, Yuka; Imamura, Tetsuya; Soeda, Masaya; Ikeda, Yoshinori; Shiro, Takashi

2015-08-01

Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si-wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram® Si paste/ink were better than those of the reference cell.

Thermoelectric properties and chlorine doping effect of In4Pb0.01Sn0.03Se2.9Clx polycrystalline compounds.

PubMed

Hee Kim, Jin; Jae Kim, Min; Oh, Suekyung; Rhyee, Jong-Soo; Park, Su-Dong; Ahn, Docheon

2015-02-21

We investigated the thermoelectric properties of Cl-doped polycrystalline compounds In4Pb0.01Sn0.03Se2.9Clx (x = 0.02, 0.04, and 0.06). X-ray diffraction measurement shows a gradual change in lattice volume for x ≤ 0.04 without any impurity phases indicating a systemic change in Cl doping. The Cl doping in the compounds has the effect of increasing carrier concentration and the effective mass of carriers, resulting in an increase in power factor at a high temperature (∼700 K). Because of the increased electrical conductivity at a high temperature, the dimensionless thermoelectric figure of merit ZT reaches 1.25 at 723 K for the x = 0.04 Cl-doped compound, which is a relatively high value for n-type polycrystalline materials.

Development of MoSi2 coating with Al doping by using high energy milling method

NASA Astrophysics Data System (ADS)

Simanjuntak, C. M. S.; Hastuty, S.; Izzuddin, H.; Sundawa, R.; Sudiro, T.; Sukarto, A.; Thosin, K. A. Z.

2018-03-01

MoSi2 is well known as a material for high temperature application because it has high oxidation and corrosion resistance. The aim of this research is to develop MoSi2 coating with Al doping on Stainless Steel 316 (SS316) substrate using High-Energy Milling method. Aluminium is added to the coating as a dopant to increase formation of MoSi2 coating layer on the substrate. The variations used here based on the concentrations of doping Al (at.%) and duration of milling. Results show that the MoSi2 coatings with variations of 30 and 50 at.% of Al doping and 3 and 6 hours of milling times were successfully coated on the surface of SS 316 using the high-energy milling method. The most optimum coating result after oxidation test at 1100 °C for 100 hours is shown by MoSi2-30%Al with 3 hours of milling times. From the oxidation results, the Al doping into MoSi2 coating was able to increase the oxidation resistance of the SS 316 substrate.

Effect of Si, Mg, and Mg Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cho, H. K.; Lee, J. Y.; Kim, K. S.; Yang, G. M.

2001-12-01

We have studied the structural properties of undoped, Si-doped, Mg-doped, and Mg-Zn codoped GaN using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. When compared with undoped GaN, the dislocation density at the surface of the GaN layer decreases with Si doping and increases with Mg doping. In addition, we observed a reduction of dislocation density by codoping with Zn atoms in the Mg-doped GaN layer. The full width at half maximum of HRXRD shows that Si doping and Mg-Zn codoping improve the structural quality of the GaN layer as compared with undoped and Mg-doped GaN, respectively.

Phase Transformation and Lattice Parameter Changes of Non-trivalent Rare Earth-Doped YSZ as a Function of Temperature

NASA Astrophysics Data System (ADS)

Jiang, Shengli; Huang, Xiao; He, Zhang; Buyers, Andrew

2018-01-01

To examine the effect of doping/co-doping on high-temperature phase compositions of YSZ, stand-alone YSZ and CeO2 and Nb2O5 co-doped YSZ samples were prepared using mechanical alloy and high-temperature sintering. XRD analysis was performed on these samples from room temperature to 1100 °C. The results show that the structure for the co-doped samples tends to be thermally stable when the test temperature is higher than a critical value. Monoclinic phase was dominant in Nb2O5 co-doped YSZ at temperatures lower than 600 °C, while for the YSZ and CeO2 co-doped YSZ, cubic/tetragonal phase was dominant in the whole test temperature range. The lattice parameters for all the samples increase with increasing test temperature generally. The lattice parameters for the two non-trivalent rare earth oxides co-doped YSZ show that the lattice parameter a for the cubic phase of the Ce4+ co-doped YSZ is consistently greater than that of 7YSZ which is related to the presence of larger radius of Ce4+ in the matrix. The lattice parameters a, b, c for the monoclinic phase of Ce4+ co-doped YSZ are much closer to each other than that of the Nb5+ co-doped YSZ, indicating the former has better tendency to form cubic/tetragonal phase, which is desired for vast engineering applications.

Phase Transformation and Lattice Parameter Changes of Non-trivalent Rare Earth-Doped YSZ as a Function of Temperature

NASA Astrophysics Data System (ADS)

Jiang, Shengli; Huang, Xiao; He, Zhang; Buyers, Andrew

2018-05-01

To examine the effect of doping/co-doping on high-temperature phase compositions of YSZ, stand-alone YSZ and CeO2 and Nb2O5 co-doped YSZ samples were prepared using mechanical alloy and high-temperature sintering. XRD analysis was performed on these samples from room temperature to 1100 °C. The results show that the structure for the co-doped samples tends to be thermally stable when the test temperature is higher than a critical value. Monoclinic phase was dominant in Nb2O5 co-doped YSZ at temperatures lower than 600 °C, while for the YSZ and CeO2 co-doped YSZ, cubic/tetragonal phase was dominant in the whole test temperature range. The lattice parameters for all the samples increase with increasing test temperature generally. The lattice parameters for the two non-trivalent rare earth oxides co-doped YSZ show that the lattice parameter a for the cubic phase of the Ce4+ co-doped YSZ is consistently greater than that of 7YSZ which is related to the presence of larger radius of Ce4+ in the matrix. The lattice parameters a, b, c for the monoclinic phase of Ce4+ co-doped YSZ are much closer to each other than that of the Nb5+ co-doped YSZ, indicating the former has better tendency to form cubic/tetragonal phase, which is desired for vast engineering applications.

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

NASA Technical Reports Server (NTRS)

Hoenk, Michael

2011-01-01

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties

NASA Astrophysics Data System (ADS)

García, I.; Rey-Stolle, I.; Galiana, B.; Algora, C.

2007-01-01

The use of tellurium as n-type dopant for GaAs and InP has several advantages, including a high incorporation efficiency, the very high doping levels achievable and a low diffusion coefficient. However, its use to dope Ga xIn 1-xP is not straightforward, since it shows several problems like a remarkable memory effect and an acute inertia of the material to become Te-doped, which gives rise to gradual doping profiles. In this paper, all these phenomena are studied and quantified using secondary ion mass spectroscopy (SIMS) and electrochemical CV profiling (ECV) measurements. Concerning the gradual doping profiles, their origin is linked to the interaction of Te and In in the gas phase and on the growth surface. A phenomenological explanation is given for this effect although the exact physical processes behind remain to be defined.

Nd- And Er-Doped Phosphate Glass For Fiber Laser.

NASA Astrophysics Data System (ADS)

Yamashita, Toshiharu T.

1990-02-01

Laser fibers prepared from Nd- and Er-doped phosphate glass possessing a large stimulated emission cross section have been investigated both in a single fiber and in a fiber bundle. In the single fiber, continuous wave oscillations were successfully obtained at 1.054 p.m and 1.366 µm on a high Nd-doped single-mode fiber of 10 mm in length and also at 1.535 pm in a Er-doped single-mode fiber, sensitized by Nd, Yb. Especially, a low threshold of 1 mw and a high slope-efficiency of 50% were achieved in 1.054 pm laser oscillation on a Nd-doped fiber, end-pumped with a laser diode. A fiber bundle of phosphate glass doped with 8 wt% Nd2O3 yielded an average output power of 100 W at 50 pps where the bundle was 4.6 mm in diameter and was side-pumped with flash lamps.

A Unique 3D Nitrogen-Doped Carbon Composite as High-Performance Oxygen Reduction Catalyst

PubMed Central

Karunagaran, Ramesh; Tung, Tran Thanh; Tran, Diana; Coghlan, Campbell; Doonan, Christian

2017-01-01

The synthesis and properties of an oxygen reduction catalyst based on a unique 3-dimensional (3D) nitrogen doped (N-doped) carbon composite are described. The composite material is synthesised via a two-step hydrothermal and pyrolysis method using bio-source low-cost materials of galactose and melamine. Firstly, the use of iron salts and galactose to hydrothermally produceiron oxide (Fe2O3) magnetic nanoparticle clusters embedded carbon spheres. Secondly, magnetic nanoparticles diffused out of the carbon sphere when pyrolysed in the presence of melamine as nitrogen precursor. Interestingly, many of these nanoparticles, as catalyst-grown carbon nanotubes (CNTs), resulted in the formation of N-doped CNTs and N-doped carbon spheres under the decomposition of carbon and a nitrogen environment. The composite material consists of integrated N-doped carbon microspheres and CNTs show high ORR activity through a predominantly four-electron pathway. PMID:28792432

Intralayer doping effects on the high-energy magnetic correlations in NaFeAs

DOE PAGES

Pelliciari, Jonathan; Huang, Yaobo; Das, Tanmoy; ...

2016-04-26

We used resonant inelastic x-ray scattering (RIXS) and dynamical susceptibility calculations to study the magnetic excitations in NaFe 1$-$xCo xAs ( x=0 , 0.03, and 0.08). Despite a relatively low ordered magnetic moment, collective magnetic modes are observed in parent compounds (x=0) and persist in optimally (x= 0.03) and overdoped (x = 0.08) samples. Their magnetic bandwidths are unaffected by doping within the range investigated. High-energy magnetic excitations in iron pnictides are robust against doping and present irrespectively of the ordered magnetic moment. Nonetheless, Co doping slightly reduces the overall magnetic spectral weight, differently from previous studies on hole-doped BaFemore » 2As 2 , where it was observed constant. Finally, we demonstrate that the doping evolution of magnetic modes is different for the dopants being inside or outside the Fe-As layer.« less

Evidence of new pinning centers in irradiated MgB2

NASA Astrophysics Data System (ADS)

Tarantini, C.; Martinelli, A.; Manfrinetti, P.; Palenzona, A.; Pallecchi, I.; Putti, M.; Ferdeghini, C.; Cimberle, M. R.

2008-03-01

It has been shown that C or SiC addictions can strongly enhance upper critical field of MgB2, leading to an in-field increase of critical current, but without introducing pinning centers other than grain boundaries. On the contrary neutron irradiation introduces new pinning centers, as highlighted by a significant shift of the maximum of pinning force and by a strong improvement of Jc at high field. This effect can be correlated to the defects that neutron irradiation produces. In fact TEM images show the presence of nanometric amorphous regions whose sizes are compatible with the coherence length and such as to act as pinning centers through two different mechanisms. The influence that neutron irradiation induces on MgB2 is also confirmed by magnetization decays that, differently by doped samples, show an important enhancement of pinning energies at high field. These measurements highlight as the increase of pinning energy with irradiation fluence is strongly correlated with Jc improvement.

Non-metal single/dual doped carbon quantum dots: a general flame synthetic method and electro-catalytic properties

NASA Astrophysics Data System (ADS)

Han, Yuzhi; Tang, Di; Yang, Yanmei; Li, Chuanxi; Kong, Weiqian; Huang, Hui; Liu, Yang; Kang, Zhenhui

2015-03-01

A combustion flame method is developed for the convenient and scalable fabrication of single- and dual-doped carbon quantum dots (CQDs) (N-CQDs, B-CQDs, P-CQDs, and S-CQDs and dual-doped B,N-CQDs, P,N-CQDs, and S,N-CQDs), and the doping contents can be easily adjusted by simply changing the concentrations of precursors in ethanol. These single/dual-doped CQDs, especially B,N-CQDs, show high catalytic activities for the oxygen reduction reaction.A combustion flame method is developed for the convenient and scalable fabrication of single- and dual-doped carbon quantum dots (CQDs) (N-CQDs, B-CQDs, P-CQDs, and S-CQDs and dual-doped B,N-CQDs, P,N-CQDs, and S,N-CQDs), and the doping contents can be easily adjusted by simply changing the concentrations of precursors in ethanol. These single/dual-doped CQDs, especially B,N-CQDs, show high catalytic activities for the oxygen reduction reaction. Electronic supplementary information (ESI) available: TEM images, UV-Vis absorption, PL, Raman, FTIR, XPS, CV, and LSV data of single/dual doped CQDs, a table for the calculated mass concentrations of different atoms in various B, N, P or S containing CQDs and a table for summary of the ORR performance of various catalysts in an O2-saturated 0.1 M KOH solution. See DOI: 10.1039/c4nr07116f

Near-Unity Emitting Copper-Doped Colloidal Semiconductor Quantum Wells for Luminescent Solar Concentrators.

PubMed

Sharma, Manoj; Gungor, Kivanc; Yeltik, Aydan; Olutas, Murat; Guzelturk, Burak; Kelestemur, Yusuf; Erdem, Talha; Delikanli, Savas; McBride, James R; Demir, Hilmi Volkan

2017-08-01

Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped colloidal quantum dots (CQDs) have been demonstrated to be promising materials for luminescent solar concentrators (LSCs) as they can be engineered for providing highly tunable and Stokes-shifted emission in the solar spectrum. However, existing doped CQDs that are aimed for full solar spectrum LSCs suffer from moderately low quantum efficiency, intrinsically small absorption cross-section, and gradually increasing absorption profiles coinciding with the emission spectrum, which together fundamentally limit their effective usage. Here, the authors show the first account of copper doping into atomically flat colloidal quantum wells (CQWs). In addition to Stokes-shifted and tunable dopant-induced photoluminescence emission, the copper doping into CQWs enables near-unity quantum efficiencies (up to ≈97%), accompanied by substantially high absorption cross-section and inherently step-like absorption profile, compared to those of the doped CQDs. Based on these exceptional properties, the authors have demonstrated by both experimental analysis and numerical modeling that these newly synthesized doped CQWs are excellent candidates for LSCs. These findings may open new directions for deployment of doped CQWs in LSCs for advanced solar light harvesting technologies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

One-Step Synthesis of Monodisperse In-Doped ZnO Nanocrystals

NASA Astrophysics Data System (ADS)

Wang, Qing Ling; Yang, Ye Feng; He, Hai Ping; Chen, Dong Dong; Ye, Zhi Zhen; Jin, Yi Zheng

2010-05-01

A method for the synthesis of high quality indium-doped zinc oxide (In-doped ZnO) nanocrystals was developed using a one-step ester elimination reaction based on alcoholysis of metal carboxylate salts. The resulting nearly monodisperse nanocrystals are well-crystallized with typically crystal structure identical to that of wurtzite type of ZnO. Structural, optical, and elemental analyses on the products indicate the incorporation of indium into the host ZnO lattices. The individual nanocrystals with cubic structures were observed in the 5% In-ZnO reaction, due to the relatively high reactivity of indium precursors. Our study would provide further insights for the growth of doped oxide nanocrystals, and deepen the understanding of doping process in colloidal nanocrystal syntheses.

High power resonant pumping of Tm-doped fiber amplifiers in core- and cladding-pumped configurations.

PubMed

Creeden, Daniel; Johnson, Benjamin R; Rines, Glen A; Setzler, Scott D

2014-11-17

We have demonstrated ultra-high efficiency amplification in Tm-doped fiber with both core- and cladding-pumped configurations using a resonant tandem-pumping approach. These Tm-doped fiber amplifiers are pumped in-band with a 1908 nm Tm-doped fiber laser and operate at 1993 nm with >90% slope efficiency. In a core-pumped configuration, we have achieved 92.1% slope efficiency and 88.4% optical efficiency at 41 W output power. In a cladding-pumped configuration, we have achieved 123.1 W of output power with 90.4% optical efficiency and a 91.6% slope efficiency. We believe these are the highest optical efficiencies achieved in a Tm-doped fiber amplifier operating in the 2-micron spectral region.

A F-doped tree-like nanofiber structural poly-m-phenyleneisophthalamide separator for high-performance lithium-sulfur batteries

NASA Astrophysics Data System (ADS)

Deng, Nanping; Wang, Yan; Yan, Jing; Ju, Jingge; Li, Zongjie; Fan, Lanlan; Zhao, Huijuan; Kang, Weimin; Cheng, Bowen

2017-09-01

In this study, F-doped tree-like nanofiber structural poly-m-phenyleneisophthalamide (PMIA) membranes are prepared via one-step electrospinning approach and their application performance as separators for lithium-sulfur batteries are discussed. The F-doped PMIA membrane can be regarded as matrix to form gel polymer electrolyte. The F doping endows the PMIA membranes with extraordinary high electrolyte uptake, excellent ability of preserving the liquid electrolyte and forceful chemisorption to polysulfides. And the tree-like structure effectively blocks polysulfides by the physical confinement. The lithium-sulfur cell with the F-doped PMIA separator exhibits high first-cycle discharge capacity of 1222.5 mAh g-1 and excellent cycling stability with good capacity retention of 745.7 mAh g-1 and coulombic efficiency of 97.97% after 800 cycles. The remarkable performance can be ascribed to the suppressed shuttle effects through both the physical trapping of polysulfides by the gel polymer electrolyte based on matrix with F-doped PMIA membrane and the tree-like structure in a working cell.

High-density Two-Dimensional Small Polaron Gas in a Delta-Doped Mott Insulator

PubMed Central

Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler A.; Zhang, Jack Y.; Stemmer, Susanne; Emin, David; Allen, S. James

2013-01-01

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)+1 plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar doping density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~7 × 1014 cm−2. PMID:24257578

Enhanced scintillation of Ba3In(B3O6)3 based on nitrogen doping

NASA Astrophysics Data System (ADS)

Wang, Z. X.; Pei, H.; Tao, X. M.; Cai, G. M.; Mao, R. H.; Jin, Z. P.

2018-02-01

Scintillating materials, as a class of luminescent materials, are highly demanded for practical use in the high-energy detection. However, the applications are often hampered by their low light yield (LY) or long decay time for many traditional scintillators. In this work, upon nitrogen anion doping, scintillation performance in layered borate Ba3In(B3O6)3 (BIB) has been excellently enhanced with high XEL intensity of ～3 times as large as that of commercial Bi4Ge3O12 (BGO) and ultra-fast fluorescent decay time of ～1.25 ns. To shed light on origins of the intrinsic violet-blue emission, we measured the in-situ vacuum ultraviolet excited (VUV) emission spectra of N-BIB ceramic. Combined with experiments and first principles calculations, the band-gap reduction and donor-acceptor density increasing by nitrogen (N) doping is responsible for the enhancement of scintillation performance for N-doped Ba3In(B3O6)3. Moreover, nitrogen anion doping rather than conventional cation doping is found to be also applicable to other intrinsic luminescent materials for enhancing performance.

Design and characterization of Yb and Nd doped transparent ceramics for high power laser applications: recent advancements

NASA Astrophysics Data System (ADS)

Lapucci, A.; Vannini, M.; Ciofini, M.; Pirri, A.; Nikl, M.; Li, J.; Esposito, L.; Biasini, V.; Hostasa, J.; Goto, T.; Boulon, G.; Maksimov, R.; Gizzi, L.; Labate, L.; Toci, G.

2017-01-01

We report a review on our recent developments in Yttebium and Neodymium doped laser ceramics, along two main research lines. The first is the design and development of Yb:YAG ceramics with non uniform doping distribution, for the management of thermo-mechanical stresses and for the mitigation of ASE: layered structures have been produced by solid state reactive sintering, using different forming processes (spray drying and cold press of the homogenized powders, tape cast of the slurry); samples have been characterized and compared to FEM analysis. The second is the investigation of Lutetium based ceramics (such as mixed garnets LuYAG and Lu2O3); this interest is mainly motivated by the favorable thermal properties of these hosts under high doping. We recently obtained for the first time high efficiency laser emission from Yb doped LuYAG ceramics. The investigation on sesquioxides has been focused on Nddoped Lu2O3 ceramics, fabricated with the Spark Plasma Sintering method (SPS). We recently achieved the first laser emission above 1 W from Nd doped Lu2O3 ceramics fabricated by SPS.

Visible light surface emitting semiconductor laser

DOEpatents

Olbright, Gregory R.; Jewell, Jack L.

1993-01-01

A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

Titanium-doped sapphire laser research and design study

NASA Technical Reports Server (NTRS)

Moulton, Peter F.

1987-01-01

Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.

Highly active lanthanum doped ZnO nanorods for photodegradation of metasystox.

PubMed

Korake, P V; Dhabbe, R S; Kadam, A N; Gaikwad, Y B; Garadkar, K M

2014-01-05

La-doped ZnO nanorods with different La contents were synthesized by microwave assisted method and characterized by various sophisticated techniques such as XRD, UV-Vis., EDS, XPS, SEM and TEM. The XRD patterns of the La-doped ZnO indicate hexagonal crystal structure with an average crystallite size of 30nm. It was found that the crystallite size of La-doped ZnO is much smaller as compared to pure ZnO and decreases with increasing La content. The photocatalytic activity of 0.5mol% La-doped ZnO in the degradation of metasystox was studied. It was observed that degradation efficiency of metasystox over La-doped ZnO increases up to 0.5mol% doping then decreases for higher doping levels. Among the catalyst studied, the 0.5mol% La-doped ZnO was the most active, showing high photocatalytic activity for the degradation of metasystox. The maximum reduction of concentration of metasystox was observed under static condition at pH 8. Reduction in the Chemical Oxygen Demand (COD) of metasystox was observed after 150min. The cytotoxicological studies of meristematic root tip cells of Allium cepa were studied. The results obtained indicate that photocatalytically degraded products of metasystox were less toxic as compared to metasystox. Copyright © 2013 Elsevier B.V. All rights reserved.

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3.

PubMed

Walsh, Lee A; Green, Avery J; Addou, Rafik; Nolting, Westly; Cormier, Christopher R; Barton, Adam T; Mowll, Tyler R; Yue, Ruoyu; Lu, Ning; Kim, Jiyoung; Kim, Moon J; LaBella, Vincent P; Ventrice, Carl A; McDonnell, Stephen; Vandenberghe, William G; Wallace, Robert M; Diebold, Alain; Hinkle, Christopher L

2018-06-08

The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current transport and defect tolerance due to suppressed backscattering. However, topological insulator based devices have been underwhelming to date primarily due to the presence of parasitic issues. An important example is the challenge of suppressing bulk conduction in Bi 2 Se 3 and achieving Fermi levels ( E F ) that reside in between the bulk valence and conduction bands so that the topologically protected surface states dominate the transport. The overwhelming majority of the Bi 2 Se 3 studies in the literature report strongly n-type materials with E F in the bulk conduction band due to the presence of a high concentration of selenium vacancies. In contrast, here we report the growth of near-intrinsic Bi 2 Se 3 with a minimal Se vacancy concentration providing a Fermi level near midgap with no extrinsic counter-doping required. We also demonstrate the crucial ability to tune E F from below midgap into the upper half of the gap near the conduction band edge by controlling the Se vacancy concentration using post-growth anneals. Additionally, we demonstrate the ability to maintain this Fermi level control following the careful, low-temperature removal of a protective Se cap, which allows samples to be transported in air for device fabrication. Thus, we provide detailed guidance for E F control that will finally enable researchers to fabricate high-performance devices that take advantage of transport through the topologically protected surface states of Bi 2 Se 3 .

Comprehensive phase diagram of two-dimensional space charge doped Bi2Sr2CaCu2O8+x.

PubMed

Sterpetti, Edoardo; Biscaras, Johan; Erb, Andreas; Shukla, Abhay

2017-12-12

The phase diagram of hole-doped high critical temperature superconductors as a function of doping and temperature has been intensively studied with chemical variation of doping. Chemical doping can provoke structural changes and disorder, masking intrinsic effects. Alternatively, a field-effect transistor geometry with an electrostatically doped, ultra-thin sample can be used. However, to probe the phase diagram, carrier density modulation beyond 10 14  cm -2 and transport measurements performed over a large temperature range are needed. Here we use the space charge doping method to measure transport characteristics from 330 K to low temperature. We extract parameters and characteristic temperatures over a large doping range and establish a comprehensive phase diagram for one-unit-cell-thick BSCCO-2212 as a function of doping, temperature and disorder.

Doped δ-bismuth oxides to investigate oxygen ion transport as a metric for condensed phase thermite ignition.

PubMed

Wang, Xizheng; Zhou, Wenbo; DeLisio, Jeffery B; Egan, Garth C; Zachariah, Michael R

2017-05-24

Nanothermites offer high energy density and high burn rates, but are mechanistically only now being understood. One question of interest is how initiation occurs and how the ignition temperature is related to microscopic controlling parameters. In this study, we explored the potential role of oxygen ion transport in Bi 2 O 3 as a controlling mechanism for condensed phase ignition reaction. Seven different doped δ-Bi 2 O 3 were synthesized by aerosol spray pyrolysis. The ignition temperatures of Al/doped Bi 2 O 3 , C/doped Bi 2 O 3 and Ta/doped Bi 2 O 3 were measured by temperature-jump/time-of-flight mass spectrometer coupled with a high-speed camera respectively. These results were then correlated to the corresponding oxygen ion conductivity (directly proportional to ion diffusivity) for these doped Bi 2 O 3 measured by impedance spectroscopy. We find that ignition of thermite with doped Bi 2 O 3 as oxidizer occurs at a critical oxygen ion conductivity (∼0.06 S cm -1 ) of doped Bi 2 O 3 in the condensed-phase so long as the aluminum is in a molten state. These results suggest that oxygen ion transport limits the condensed state Bi 2 O 3 oxidized thermite ignition. We also find that the larger oxygen vacancy concentration and the smaller metal-oxide bond energy in doped Bi 2 O 3 , the lower the ignition temperature. The latter suggests that we can consider the possibility of manipulating microscopic properties within a crystal, to tune the resultant energetic properties.

Spherical nitrogen-doped hollow mesoporous carbon as an efficient bifunctional electrocatalyst for Zn-air batteries

NASA Astrophysics Data System (ADS)

Hadidi, Lida; Davari, Elaheh; Iqbal, Muhammad; Purkait, Tapas K.; Ivey, Douglas G.; Veinot, Jonathan G. C.

2015-12-01

Materials based upon porous carbon have gained considerable attention due to their high surface area, electric conductivity, thermal and chemical stability, low density, and availability. These superior properties make them ideal for diverse applications. Doping these carbon nanostructures holds promise of designing the properties of these structures and opening the door to practical applications. Herein, we report the preparation of hollow N-doped mesoporous carbon (HMC) spheres fabricated via polymerization and carbonization of dopamine on a sacrificial spherical SiO2 template that is removed upon hydrofluoric acid etching. The morphology and structural features of these HMCs were evaluated using scanning electron microscopy and transmission electron microscopy and the N-doping (7.1 at%) was confirmed by X-ray photoelectron spectroscopy (XPS). The oxygen reduction/evolution reaction (ORR/OER) performance of N-doped HMC was evaluated using rotating disk electrode (RDE) voltammetry in an alkaline electrolyte. N-doped HMC demonstrated a high ORR onset potential of -0.055 V (vs. Hg/HgO) and excellent stability. The outstanding bifunctional activity was implemented in a practical Zn-air battery (ZAB), which exhibited a small charge-discharge voltage polarization of 0.89 V and high stability over repeated cycling.Materials based upon porous carbon have gained considerable attention due to their high surface area, electric conductivity, thermal and chemical stability, low density, and availability. These superior properties make them ideal for diverse applications. Doping these carbon nanostructures holds promise of designing the properties of these structures and opening the door to practical applications. Herein, we report the preparation of hollow N-doped mesoporous carbon (HMC) spheres fabricated via polymerization and carbonization of dopamine on a sacrificial spherical SiO2 template that is removed upon hydrofluoric acid etching. The morphology and structural features of these HMCs were evaluated using scanning electron microscopy and transmission electron microscopy and the N-doping (7.1 at%) was confirmed by X-ray photoelectron spectroscopy (XPS). The oxygen reduction/evolution reaction (ORR/OER) performance of N-doped HMC was evaluated using rotating disk electrode (RDE) voltammetry in an alkaline electrolyte. N-doped HMC demonstrated a high ORR onset potential of -0.055 V (vs. Hg/HgO) and excellent stability. The outstanding bifunctional activity was implemented in a practical Zn-air battery (ZAB), which exhibited a small charge-discharge voltage polarization of 0.89 V and high stability over repeated cycling. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06028a

[Interdisciplinary strategies versus doping].

PubMed

Vitzthum, Karin; Mache, Stefanie; Quarcoo, David; Groneberg, David A; Schöffel, Norman

2010-06-01

Doping is a phenomenon which in the past years through the various incidences in professional cycling has come more and more into the focus of the public interest. Whilst in the young past the problems were to define the term "doping" exactly, today's problem is to prevent adolescents and children of doping. This shall be achieved by carrying out controls and serious sanctions for doping violations. Scientific research proved that doping usage can be avoided by broad specific prevention measures. In general, the earlier the athletes dope the higher the risk to become addicted later on in life to other legal or illegal drugs. The aim of this review is to analyse the prevalence of doping regarding youth-, competitive-, high performance and recreational sports and to examine further aspects of doping abuse, risks of addiction, the legal situation, current strategies in the fight against doping and to enhance chances of further doping prevention opportunities. By means of this data an all-embracing view should be given over the current situation, problems and prospects in German-speaking countries.

Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

NASA Astrophysics Data System (ADS)

Sahin, Bünyamin; Kaya, Tolga

2016-01-01

In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current-voltage (I-V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

High-Level Heteroatom Doped Two-Dimensional Carbon Architectures for Highly Efficient Lithium-Ion Storage

PubMed Central

Wang, Zhijie; Wang, Yanyan; Wang, Wenhui; Yu, Xiaoliang; Lv, Wei; Xiang, Bin; He, Yan-Bing

2018-01-01

In this work, high-level heteroatom doped two-dimensional hierarchical carbon architectures (H-2D-HCA) are developed for highly efficient Li-ion storage applications. The achieved H-2D-HCA possesses a hierarchical 2D morphology consisting of tiny carbon nanosheets vertically grown on carbon nanoplates and containing a hierarchical porosity with multiscale pore size. More importantly, the H-2D-HCA shows abundant heteroatom functionality, with sulfur (S) doping of 0.9% and nitrogen (N) doping of as high as 15.5%, in which the electrochemically active N accounts for 84% of total N heteroatoms. In addition, the H-2D-HCA also has an expanded interlayer distance of 0.368 nm. When used as lithium-ion battery anodes, it shows excellent Li-ion storage performance. Even at a high current density of 5 A g−1, it still delivers a high discharge capacity of 329 mA h g−1 after 1,000 cycles. First principle calculations verifies that such unique microstructure characteristics and high-level heteroatom doping nature can enhance Li adsorption stability, electronic conductivity and Li diffusion mobility of carbon nanomaterials. Therefore, the H-2D-HCA could be promising candidates for next-generation LIB anodes. PMID:29686985

Microscopic signature of insulator-to-metal transition in highly doped semicrystalline conducting polymers in ionic-liquid-gated transistors

NASA Astrophysics Data System (ADS)

Tanaka, Hisaaki; Nishio, Satoshi; Ito, Hiroshi; Kuroda, Shin-ichi

2015-12-01

Electronic state of charge carriers, in particular, in highly doped regions, in thin-film transistors of a semicrystalline conducting polymer poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene), has been studied by using field-induced electron spin resonance (ESR) spectroscopy. By adopting an ionic-liquid gate insulator, a gate-controlled reversible electrochemical hole-doping of the polymer backbone is achieved, as confirmed from the change of the optical absorption spectra. The edge-on molecular orientation in the pristine film is maintained even after the electrochemical doping, which is clarified from the angular dependence of the g value. As the doping level increases, spin 1/2 polarons transform into spinless bipolarons, which is demonstrated from the spin-charge relation showing a spin concentration peak around 1%, contrasting to the monotonic increase in the charge concentration. At high doping levels, a drastic change in the linewidth anisotropy due to the generation of conduction electrons is observed, indicating the onset of metallic state, which is also supported by the temperature dependence of the spin susceptibility and the ESR linewidth. Our results suggest that semicrystalline conducting polymers become metallic with retaining their molecular orientational order, when appropriate doping methods are chosen.

Doping management for high-power fiber lasers: 100 W, few-picosecond pulse generation from an all-fiber-integrated amplifier.

PubMed

Elahi, P; Yılmaz, S; Akçaalan, O; Kalaycıoğlu, H; Oktem, B; Senel, C; Ilday, F Ö; Eken, K

2012-08-01

Thermal effects, which limit the average power, can be minimized by using low-doped, longer gain fibers, whereas the presence of nonlinear effects requires use of high-doped, shorter fibers to maximize the peak power. We propose the use of varying doping levels along the gain fiber to circumvent these opposing requirements. By analogy to dispersion management and nonlinearity management, we refer to this scheme as doping management. As a practical first implementation, we report on the development of a fiber laser-amplifier system, the last stage of which has a hybrid gain fiber composed of high-doped and low-doped Yb fibers. The amplifier generates 100 W at 100 MHz with pulse energy of 1 μJ. The seed source is a passively mode-locked fiber oscillator operating in the all-normal-dispersion regime. The amplifier comprises three stages, which are all-fiber-integrated, delivering 13 ps pulses at full power. By optionally placing a grating compressor after the first stage amplifier, chirp of the seed pulses can be controlled, which allows an extra degree of freedom in the interplay between dispersion and self-phase modulation. This way, the laser delivers 4.5 ps pulses with ~200 kW peak power directly from fiber, without using external pulse compression.

The origin of current blocking in interfacial conduction in Sr-doped lanthanum gallates

NASA Astrophysics Data System (ADS)

Park, Hee Jung

2018-02-01

The grain boundary transport of lanthanum gallate has been studied with various doping concentrations, and the origins of blocking on the grain boundary are compared. La1-xSrxGaO3 samples (x = 0.005, 0.01, 0.05 and 0.1) have been prepared and their bulk (grain) and grain boundary resistances been experimentally measured as a function of temperature (T: 200-550 °C) and oxygen partial pressure (Po2) using ac-impedance measurements. In addition, Hebb-Wagner polarization measurements have been conducted to investigate the electrical conductivity of minor charge carriers in the lanthanum gallates. The grain boundary resistance in the low-doped materials (x = 0.005 and 0.01) increases with increasing Po2 while in the highly-doped materials (x = 0.05, 0.1) it hardly depended on Po2. At lower concentrations conduction is mixed and at higher concentrations is found to be predominantly ionic conductivity. The space charge model successfully describes the mixed conduction at the grain boundary at low-doping, but does not explain the predominant ionic conductivity at high-doping. The origin of blocking at high-doping is explained by the crystallographic asymmetry of the grain boundary with respect to the bulk and/or Sr-segregation.

Enhancing the Li storage capacity and initial coulombic efficiency for porous carbons by sulfur doping.

PubMed

Ning, Guoqing; Ma, Xinlong; Zhu, Xiao; Cao, Yanming; Sun, Yuzhen; Qi, Chuanlei; Fan, Zhuangjun; Li, Yongfeng; Zhang, Xin; Lan, Xingying; Gao, Jinsen

2014-09-24

Here, we report a new approach to synthesizing S-doped porous carbons and achieving both a high capacity and a high Coulombic efficiency in the first cycle for carbon nanostructures as anodes for Li ion batteries. S-doped porous carbons (S-PCs) were synthesized by carbonization of pitch using magnesium sulfate whiskers as both templates and S source, and a S doping up to 10.1 atom % (corresponding to 22.5 wt %) was obtained via a S doping reaction. Removal of functional groups or highly active C atoms during the S doping has led to formation of much thinner solid-electrolyte interface layer and hence significantly enhanced the Coulombic efficiency in the first cycle from 39.6% (for the undoped porous carbon) to 81.0%. The Li storage capacity of the S-PCs is up to 1781 mA h g(-1) at the current density of 50 mA g(-1), more than doubling that of the undoped porous carbon. Due to the enhanced conductivity, the hierarchically porous structure and the excellent stability, the S-PC anodes exhibit excellent rate capability and reliable cycling stability. Our results indicate that S doping can efficiently promote the Li storage capacity and reduce the irreversible Li combination for carbon nanostructures.

Nitrogen-doped graphene prepared by a transfer doping approach for the oxygen reduction reaction application

NASA Astrophysics Data System (ADS)

Mo, Zaiyong; Zheng, Ruiping; Peng, Hongliang; Liang, Huagen; Liao, Shijun

2014-01-01

Well defined nitrogen-doped graphene (NG) is prepared by a transfer doping approach, in which the graphene oxide (GO) is deoxidized and nitrogen doped by the vaporized polyaniline, and the GO is prepared by a thermal expansion method from graphite oxide. The content of doped nitrogen in the doped graphene is high up to 6.25 at% by the results of elements analysis, and oxygen content is lowered to 5.17 at%. As a non-precious metal cathode electrocatalyst, the NG catalyst exhibits excellent activity toward the oxygen reduction reaction, as well as excellent tolerance toward methanol. In 0.1 M KOH solution, its onset potential, half-wave potential and limiting current density for the oxygen reduction reaction reach 0.98 V (vs. RHE), 0.87 V (vs. RHE) and 5.38 mA cm-2, respectively, which are comparable to those of commercial 20 wt% Pt/C catalyst. The well defined graphene structure of the catalyst is revealed clearly by HRTEM and Raman spectra. It is suggested that the nitrogen-doping and large surface area of the NG sheets give the main contribution to the high ORR catalytic activity.

Phosphorus Doping in Si Nanocrystals/SiO2 msultilayers and Light Emission with Wavelength compatible for Optical Telecommunication

PubMed Central

Lu, Peng; Mu, Weiwei; Xu, Jun; Zhang, Xiaowei; Zhang, Wenping; Li, Wei; Xu, Ling; Chen, Kunji

2016-01-01

Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities increase with the P doping concentration or annealing temperature increasing. Furthermore, a kind of defect states will be generated with high doping concentration or annealing temperature due to the damage of Si crystalline lattice. More interestingly, the incorporated P dopants can generate deep levels in the ultra-small sized (~2 nm) Si NCs, which will cause a new subband light emission with the wavelength compatible with the requirement of the optical telecommunication. The studies of P-doped Si NCs/SiO2 multilayers suggest that P doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs. PMID:26956425

Preparation and laser properties of Yb3+-doped microstructure fiber based on hydrolysis-melting technique

NASA Astrophysics Data System (ADS)

Wang, Chao

2017-01-01

The Yb3+-doped silica glass was prepared by the SiCl4 hydrolysis doping and powder melting technology based on high frequency plasma. The absorption and emission characteristics of the Yb3+-doped silica glass are studied at room temperature. The integrated absorption cross section, stimulated emission cross section and fluorescence lifetime are calculated to be 8.56×104 pm3, 1.39 pm2 and 0.56 ms, respectively. The Yb3+-doped microstructure fiber (MSF) was also fabricated by using the Yb3+-doped silica glass as fiber core. What's more, the laser properties of the Yb3+-doped MSF are studied.

Fiber Amplifier Report for NEPP 2008

NASA Technical Reports Server (NTRS)

Thomes, Joe; Ott, Melanie; LaRocca, Frank; Chuska, Rick; Switzer, Rob

2008-01-01

Ongoing qualification activities of LiNbO3 modulators. Passive (unpumped) radiation testing of Er-, Yb-, and Er/Yb-doped fibers: a) Yb-doped fibers exhibit higher radiation resistance than Er-doped fibers; b) Er/Yb co-doped fibers exhibit largest radiation resistance. Active (pumped) radiation testing of Yb-doped fibers conducted at NASA GSFC: a) Typical decay behavior observed; b) No comparison could be made to other fibers due to problems with test setup. Development of new high power fiber terminations.

Habit modification of potassium acid phthalate (KAP) single crystals by impurities

NASA Astrophysics Data System (ADS)

Murugakoothan, P.; Mohan Kumar, R.; Ushasree, P. M.; Jayavel, R.; Dhanasekaran, R.; Ramasamy, P.

1999-12-01

Nonlinear optical materials potassium dihydrogen phosphate (KDP), urea and L-arginine phosphate (LAP)-doped KAP crystals were grown by the slow cooling method. The LAP-doped crystals show pronounced habit modification compared to KDP and urea doping. The effect of these impurities on growth kinetics, surface morphology, habit modification, structure, optical and mechanical properties have been studied. Among the three impurities, urea doping yields high mechanical stability and optical transmission and for KDP and LAP doping there is a decrease in optical transmission.

Dopant behavior in heavily doped polycrystalline Ge1- x Sn x layers prepared with pulsed laser annealing in water

NASA Astrophysics Data System (ADS)

Takahashi, Kouta; Kurosawa, Masashi; Ikenoue, Hiroshi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

2018-04-01

A low-temperature process for the formation of heavily doped polycrystalline Ge (poly-Ge) layers on insulators is required to realize next-generation electronic devices. In this study, we have systematically investigated pulsed laser annealing (PLA) in flowing water for heavily doped amorphous Ge1- x Sn x layers (x ≈ 0.02) with various dopants such as B, Al, Ga, In, P, As, and Sb on SiO2. It is found that the dopant density after PLA with a high laser energy is reduced when the oxidized dopant has a lower oxygen chemical potential than H2O. As a result, for the p-type doping of B, Al, Ga, and In, we obtained a high Hall hole density of 5 × 1019 cm-3 for PLA with a low energy. Consequently, the Hall hole mobility is limited to as low as 10 cm2 V-1 s-1. In contrast, for As and Sb doping, because the density of substitutional dopants does not decrease even after PLA with a high energy, we achieved a high Hall electron density of 6 × 1019 cm-3 and a high Hall electron mobility simultaneously. These results indicate that preventing the oxidation of dopant atoms by water is an important factor for achieving heavy doping using PLA in water.

Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.

2015-01-15

Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework withmore » an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.« less

High Temperature Superconductivity in Praseodymium Doped (0%, 2%, 4%) in Melt-Textured Y(1-x)Pr(x)Ba2Cu3O(7-delta) Systems

NASA Technical Reports Server (NTRS)

James, Claudell

1995-01-01

A study of the magnetic and structural properties of the alloy Y(1-x)Pr(x)Ba2Cu3O(7-delta) of 0%, 2%, and 4% doping of praseodymium is presented. The resulting oxides of the alloy series are a high-temperature superconductor Y-Ba-Cu-O, which has an orthorhombic superconducting crystal-lattice. Magnetic relaxation studies have been performed on the Y-Pr-Ba-CuO bulk samples for field orientation parallel to the c-axis, using a vibrating sample magnetometer. Relaxation was measured at several temperatures to obtain the irreversible magnetization curves used for the Bean model. Magnetization current densities were derived from the relaxation data. Field and temperature dependence of the logarithmic flux-creep relaxation was measured in critical state. The data indicates that the effective activation energy U(eff) increases with increasing T between 77 K and 86 K. Also, the data shows that U(eff)(T) and superconducting transition temperature, Tc, decreased as the lattice parameters increased with increasing Pr ion concentration, x, for the corresponding Y(1-x)Pr(x)Ba(x)Cu3O(7-delta) oxides. One contribution to Tc decrease in this sampling is suspected to be due to the larger ionic radius of the Pr(3+) ion. The upper critical field (H(sub c2)) was measured in the presence of magnetic field parallel to the c axis. A linear temperature dependence with H(sub c2) was obtained.

Enlightening the ultrahigh electrical conductivities of doped double-wall carbon nanotube fibers by Raman spectroscopy and first-principles calculations.

PubMed

Tristant, Damien; Zubair, Ahmed; Puech, Pascal; Neumayer, Frédéric; Moyano, Sébastien; Headrick, Robert J; Tsentalovich, Dmitri E; Young, Colin C; Gerber, Iann C; Pasquali, Matteo; Kono, Junichiro; Leotin, Jean

2016-12-01

Highly aligned, packed, and doped carbon nanotube (CNT) fibers with electrical conductivities approaching that of copper have recently become available. These fibers are promising for high-power electrical applications that require light-weight, high current-carrying capacity cables. However, a microscopic understanding of how doping affects the electrical conductance of such CNT fibers in a quantitative manner has been lacking. Here, we performed Raman spectroscopy measurements combined with first-principles calculations to determine the position of the average Fermi energy and to obtain the temperature of chlorosulfonic-acid-doped double-wall CNT fibers under high current. Due to the unique way in which double-wall CNT Raman spectra depend on doping, it is possible to use Raman data to determine the doping level quantitatively. The correspondence between the Fermi level shift and the carbon charge transfer is derived from a tight-binding model and validated by several calculations. For the doped fiber, we were able to associate an average Fermi energy shift of ∼-0.7 eV with a conductance increase by a factor of ∼5. Furthermore, since current induces heating, local temperature determination is possible. Through the Stokes-to-anti-Stokes intensity ratio of the G-band peaks, we estimated a temperature rise at the fiber surface of ∼135 K at a current density of 2.27 × 10 8 A m -2 identical to that from the G-band shift, suggesting that thermalization between CNTs is well achieved.

Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

PubMed

Pal, Bappaditya; Giri, P K

2011-10-01

Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

Evolution of electrical properties and domain configuration of Mn modified Pb(In1/2Nb1/2)O3-PbTiO3 single crystals

NASA Astrophysics Data System (ADS)

Qiao, Huimin; He, Chao; Yuan, Feifei; Wang, Zujian; Li, Xiuzhi; Liu, Ying; Guo, Haiyan; Long, Xifa

2018-04-01

The acceptor doped relaxor-based ferroelectric materials are useful for high power applications such as probes in ultrasound-guided high intensity focused ultrasound therapy. In addition, a high Curie temperature is desired because of wider temperature usage and improved temperature stability. Previous investigations have focused on Pb(Mg1/3Nb2/3)O3-PbTiO3 and Pb(Zn1/3Nb2/3)O3-PbTiO3 systems, which have a ultrahigh piezoelectric coefficient and dielectric constant, but a relatively low Curie temperature. It is desirable to study the binary relaxor-based system with a high Curie temperature. Therefore, Pb(In1/2Nb1/2)O3-PbTiO3 (PINT) single crystals were chosen to study the Mn-doped influence on their electrical properties and domain configuration. The evolution of ferroelectric hysteresis loops for doped and virgin samples exhibit the pinning effect in Mn-doped PINT crystals. The relaxation behaviors of doped and virgin samples are studied by fit of the modified Curie-Weiss law and Volgel-Fucher relation. In addition, a short-range correlation length was fitted to study the behavior of polar nanoregions based on the domain configuration obtained by piezoresponse force microscopy. Complex domain structures and smaller short-range correlation lengths (100-150 nm for Mn-doped PINT and >400 nm for pure PINT) were obtained in the Mn-doped PINT single crystals.

Layer-by-layer assembled heteroatom-doped graphene films with ultrahigh volumetric capacitance and rate capability for micro-supercapacitors.

PubMed

Wu, Zhong-Shuai; Parvez, Khaled; Winter, Andreas; Vieker, Henning; Liu, Xianjie; Han, Sheng; Turchanin, Andrey; Feng, Xinliang; Müllen, Klaus

2014-07-09

Highly uniform, ultrathin, layer-by-layer heteroatom (N, B) co-doped graphene films are fabricated for high-performance on-chip planar micro-supercapacitors with an ultrahigh volumetric capacitance of ∼488 F cm(-3) and excellent rate capability due to the synergistic effect of nitrogen and boron co-doping. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A facile method to synthesize boron-doped Ni/Fe alloy nano-chains as electrocatalyst for water oxidation

NASA Astrophysics Data System (ADS)

Yang, Yisu; Zhuang, Linzhou; Lin, Rijia; Li, Mengran; Xu, Xiaoyong; Rufford, Thomas E.; Zhu, Zhonghua

2017-05-01

We report a novel magnetic field assisted chemical reduction method for the synthesis of boron-doped Ni/Fe nano-chains as promising catalysts for the oxygen evolution reaction (OER). The boron-doped Ni/Fe nano-chains were synthesised in a one step process at room temperature using NaBH4 as a reducing agent. The addition of boron reduced the magnetic moment of the intermediate synthesis products and produced nano-chains with a high specific surface area of 73.4 m2 g-1. The boron-doped Ni/Fe nano-chains exhibited catalytic performance superior to state-of-the-art Ba0.5Sr0.5Co0.8Fe0.2O3-δ perovskite and RuO2 noble metal oxide catalysts. The mass normalized activity of the boron-doped Ni/Fe nano-chains measured at an overpotential of 0.35 V was 64.0 A g-1, with a Tafel slope of only 40 mV dec-1. The excellent performance of the boron-doped Ni/Fe nano-chains can be attributed to the uniform elemental distribution and highly amorphous structure of the B-doped nano-chains. These results provide new insights into the effect of doping transition-metal based OER catalysts with non-metallic elements. The study demonstrates a facile approach to prepare transition metal nano-chains using magnetic field assisted chemical reduction method as cheap and highly active catalysts for electrochemical water oxidation.

Spectroscopic properties of Tm3+/Al3+ co-doped sol-gel silica glass

NASA Astrophysics Data System (ADS)

Wang, Xue; Lou, Fengguang; Wang, Shikai; Yu, Chunlei; Chen, Danping; Hu, Lili

2015-04-01

Tm3+/Al3+ co-doped silica glass was prepared by sol-gel method combined with high temperature sintering. Glasses with compositions of xTm2O3-15xAl2O3-(100 - 16x) SiO2 (in mol%, x = 0.1, 0.3, 0.5, 0.8 and 1.0) were prepared. The high thulium doped silica glass was realized. Their spectroscopic parameters were calculated and analyzed by Judd-Ofelt theory. Large absorption cross section (4.65 × 10-21 cm2 at 1668 nm) and stimulated emission cross section (6.00 × 10-21 cm2 at 1812 nm), as well as low hydroxyl content (0.180 cm-1), long fluorescence lifetime (834 μs at 1800 nm), large σem × τrad (30.05 × 10-21 cm2 ms) and large relative intensity ratio of the 1.8 μm (3F4 → 3H6) to 1.46 (3H4 → 3F4) emissions (90.33) are achieved in this Tm3+/Al3+ co-doped silica glasses. According to emission characteristics, the optimum thulium doping concentration is around 0.8 mol%. The cross relaxation (CR) between ground and excited states of Tm3+ ions was used to explain the optimum thulium doping concentration. These results suggest that the sol-gel method is an effective way to prepare Tm3+ doped silica glass with high Tm3+ doping and prospective spectroscopic properties.

Controllable fabrication of Pt nanocatalyst supported on N-doped carbon containing nickel nanoparticles for ethanol oxidation.

PubMed

Yu, Jianguo; Dai, Tangming; Cao, Yuechao; Qu, Yuning; Li, Yao; Li, Juan; Zhao, Yongnan; Gao, Haiyan

2018-08-15

In this paper, platinum nanoparticles were deposited on a carbon carrier with the partly graphitized carbon and the highly dispersive carbon-coated nickel particles. An efficient electron transfer structure can be fabricated by controlling the contents of the deposited platinum. The high resolution transmission electron microscopy images of Pt 2 /Ni@C N-doped sample prove the electron transfer channel from Pt (1 1 1) crystal planes to graphite (1 0 0) or Ni (1 1 1) crystal planes due to these linked together crystal planes. The Pt 3 /Ni@C N-doped with low Pt contents cannot form the electron transfer structure and the Pt 1 /Ni@C N-doped with high Pt contents show an obvious aggregation of Pt nanoparticles. The electrochemical tests of all the catalysts show that the Pt 2 /Ni@C N-doped sample presents the highest catalytic activity, the strongest CO tolerance and the best catalytic stability. The high performance is attributed to the efficient electronic transport structure of the Pt 2 /Ni@C N-doped sample and the synergistic effect between Pt and Ni nanoparticles. This paper provides a promising method for enhancing the conductivity of electrode material. Copyright © 2018 Elsevier Inc. All rights reserved.

Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

NASA Astrophysics Data System (ADS)

Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

2018-03-01

Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

Effect of nitrogen doping on structural, morphological, optical and electrical properties of radio frequency magnetron sputtered zinc oxide thin films

NASA Astrophysics Data System (ADS)

Perumal, R.; Hassan, Z.

2016-06-01

Zinc oxide receives remarkable attention due to its several attractive physical properties. Zinc oxide thin films doped with nitrogen were grown by employing RF magnetron sputtering method at room temperature. Doping was accomplished in gaseous medium by mixing high purity nitrogen gas along with argon sputtering gas. Structural studies confirmed the high crystalline nature with c-axis oriented growth of the nitrogen doped zinc oxide thin films. The tensile strain was developed due to the incorporation of the nitrogen into the ZnO crystal lattice. Surface roughness of the grown films was found to be decreased with increasing doping level was identified through atomic force microscope analysis. The presenting phonon modes of each film were confirmed through FTIR spectral analysis. The increasing doping level leads towards red-shifting of the cut-off wavelength due to decrement of the band gap was identified through UV-vis spectroscopy. All the doped films exhibited p-type conductivity was ascertained using Hall measurements and the obtained results were presented.

Two-dimensional vanadium-doped ZnO nanosheet-based flexible direct current nanogenerator.

PubMed

Gupta, Manoj Kumar; Lee, Ju-Hyuck; Lee, Keun Young; Kim, Sang-Woo

2013-10-22

Here, we report the synthesis of lead-free single-crystalline two-dimensional (2D) vanadium(V)-doped ZnO nanosheets (NSs) and their application for high-performance flexible direct current (DC) power piezoelectric nanogenerators (NGs). The vertically aligned ZnO nanorods (NRs) converted to NS networks by V doping. Piezoresponse force microscopy studies reveal that vertical V-doped ZnO NS exhibit typical ferroelectricity with clear phase loops, butterfly, and well-defined hysteresis loops with a piezoelectric charge coefficient of up to 4 pm/V, even in 2D nanostructures. From pristine ZnO NR-based NGs, alternating current (AC)-type output current was observed, while from V-doped ZnO NS-based NGs, a DC-type output current density of up to 1.0 μAcm(-2) was surprisingly obtained under the same vertical compressive force. The growth mechanism, ferroelectric behavior, charge inverted phenomena, and high piezoelectric output performance observed from the V-doped ZnO NS are discussed in terms of the formation of an ionic layer of [V(OH)4(-)], permanent electric dipole, and the doping-induced resistive behavior of ZnO NS.

Pressure effects on magnetic ground states in cobalt doped multiferroic Mn 1-xCo xWO 4

DOE PAGES

Wang, Jinchen; Ye, Feng; Chi, Songxue; ...

2016-04-28

Using x-ray and high pressure neutron diffraction, we studied the pressure effect on structural and magnetic properties of multiferroic Mn 1-xCo xWO 4 single crystals (x = 0, 0.05, 0.135 and 0.17), and compared it with the effects of doping. Both Co doping and pressure stretch the Mn-Mn chain along the c direction. At high doping level (x = 0.135 and 0.17), pressure and Co doping drive the system in a very similar way and induce a spin-flop transition for the x = 0.135 compound. In contrast, magnetic ground states at lower doping level (x = 0 and 0.05) aremore » robust against pressure but experience a pronounced change upon Co substitution. As Co introduces both chemical pressure and magnetic anisotropy into the frustrated magnetic system, our results suggest the magnetic anisotropy is the main driving force for the Co induced phase transitions at low doping level, and chemical pressure plays a more significant role at higher Co concentrations.« less

The photoluminescence, drug delivery and imaging properties of multifunctional Eu3+/Gd3+ dual-doped hydroxyapatite nanorods.

PubMed

Chen, Feng; Huang, Peng; Zhu, Ying-Jie; Wu, Jin; Zhang, Chun-Lei; Cui, Da-Xiang

2011-12-01

The design and synthesis of multifunctional systems with high biocompatibility are very significant for the future of clinical applications. Herein, we report a microwave-assisted rapid synthesis of multifunctional Eu(3+)/Gd(3+) dual-doped hydroxyapatite (HAp) nanorods, and the photoluminescence (PL), drug delivery and in vivo imaging of as-prepared Eu(3+)/Gd(3+) doped HAp nanorods. The photoluminescent and magnetic multifunctions of HAp nanorods are realized by the dual-doping with Eu(3+) and Gd(3+). The PL intensity of doped HAp nanorods can be adjusted by varying Eu(3+) and Gd(3+) concentrations. The magnetization of doped HAp nanorods increases with the concentration of doped Gd(3+). The as-prepared Eu(3+)/Gd(3+)-doped HAp nanorods exhibit inappreciable toxicity to the cells in vitro. More importantly, the Eu(3+)/Gd(3+)-doped HAp nanorods show a high drug adsorption capacity and sustained drug release using ibuprofen as a model drug, and the drug release is governed by a diffusion process. Furthermore, the noninvasive visualization of nude mice with subcutaneous injection indicates that the Eu(3+)/Gd(3+)-doped HAp nanorods with the photoluminescent function are suitable for in vivo imaging. In vitro and in vivo imaging tests indicate that Eu(3+)/Gd(3+)-doped HAp nanorods have a potential in applications such as a multiple-model imaging agent for magnetic resonance (MR) imaging, photoluminescence imaging and computed tomography (CT) imaging. The Eu(3+)/Gd(3+) dual-doped HAp nanorods are promising for applications in the biomedical fields such as multifunctional drug delivery systems with imaging guidance. Copyright © 2011 Elsevier Ltd. All rights reserved.

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Goradia, Chandra; Goradia, Manju; Thomas, Ralph D.; Brinker, David J.; Fatemi, Navid S.; Honecy, Frank S.

1991-01-01

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Highly Nitrogen-Doped Three-Dimensional Carbon Fibers Network with Superior Sodium Storage Capacity.

PubMed

Lei, Wen; Xiao, Weiping; Li, Jingde; Li, Gaoran; Wu, Zexing; Xuan, Cuijuan; Luo, Dan; Deng, Ya-Ping; Wang, Deli; Chen, Zhongwei

2017-08-30

Inspired by the excellent absorption capability of spongelike bacterial cellulose (BC), three-dimensional hierarchical porous carbon fibers doped with an ultrahigh content of N (21.2 atom %) (i.e., nitrogen-doped carbon fibers, NDCFs) were synthesized by an adsorption-swelling strategy using BC as the carbonaceous material. When used as anode materials for sodium-ion batteries, the NDCFs deliver a high reversible capacity of 86.2 mAh g -1 even after 2000 cycles at a high current density of 10.0 A g -1 . It is proposed that the excellent Na + storage performance is mainly due to the defective surface of the NDCFs created by the high content of N dopant. Density functional theory (DFT) calculations show that the defect sites created by N doping can strongly "host" Na + and therefore contribute to the enhanced storage capacity.

Effect on Electron Structure and Magneto-Optic Property of Heavy W-Doped Anatase TiO2.

PubMed

Hou, Qingyu; Zhao, Chunwang; Guo, Shaoqiang; Mao, Fei; Zhang, Yue

2015-01-01

The spin or nonspin state of electrons in W-doped anatase TiO2 is very difficult to judge experimentally because of characterization method limitations. Hence, the effect on the microscopic mechanism underlying the visible-light effect of W-doped anatase TiO2 through the consideration of electronic spin or no-spin states is still unknown. To solve this problem, we establish supercell models of W-doped anatase TiO2 at different concentrations, followed by geometry optimization and energy calculation based on the first-principle planewave norm conserving pseudo-potential method of the density functional theory. Calculation results showed that under the condition of nonspin the doping concentration of W becomes heavier, the formation energy becomes greater, and doping becomes more difficult. Meanwhile, the total energy increases, the covalent weakens and ionic bonds strengthens, the stability of the W-doped anatase TiO2 decreases, the band gap increases, and the blue-shift becomes more significant with the increase of W doping concentration. However, under the condition of spin, after the band gap correction by the GGA+U method, it is found that the semimetal diluted magnetic semiconductors can be formed by heavy W-doped anatase TiO2. Especially, a conduction electron polarizability of as high as near 100% has been found for the first time in high concentration W-doped anatase TiO2. It will be able to be a promising new type of dilute magnetic semiconductor. And the heavy W-doped anatase TiO2 make the band gap becomes narrower and absorption spectrum red-shift.

Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature.

PubMed

Kim, Myeong-Ho; Lee, Young-Ahn; Kim, Jinseo; Park, Jucheol; Ahn, Seungbae; Jeon, Ki-Joon; Kim, Jeong Won; Choi, Duck-Kyun; Seo, Hyungtak

2015-10-27

The photochemical tunability of the charge-transport mechanism in metal-oxide semiconductors is of great interest since it may offer a facile but effective semiconductor-to-metal transition, which results from photochemically modified electronic structures for various oxide-based device applications. This might provide a feasible hydrogen (H)-radical doping to realize the effectively H-doped metal oxides, which has not been achieved by thermal and ion-implantation technique in a reliable and controllable way. In this study, we report a photochemical conversion of InGaZnO (IGZO) semiconductor to a transparent conductor via hydrogen doping to the local nanocrystallites formed at the IGZO/glass interface at room temperature. In contrast to thermal or ionic hydrogen doping, ultraviolet exposure of the IGZO surface promotes a photochemical reaction with H radical incorporation to surface metal-OH layer formation and bulk H-doping which acts as a tunable and stable highly doped n-type doping channel and turns IGZO to a transparent conductor. This results in the total conversion of carrier conduction property to the level of metallic conduction with sheet resistance of ∼16 Ω/□, room temperature Hall mobility of 11.8 cm(2) V(-1) sec(-1), the carrier concentration at ∼10(20) cm(-3) without any loss of optical transparency. We demonstrated successful applications of photochemically highly n-doped metal oxide via optical dose control to transparent conductor with excellent chemical and optical doping stability.

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

NASA Astrophysics Data System (ADS)

Al-Attili, Abdelrahman Z.; Kako, Satoshi; Husain, Muhammad K.; Gardes, Frederic Y.; Arimoto, Hideo; Higashitarumizu, Naoki; Iwamoto, Satoshi; Arakawa, Yasuhiko; Ishikawa, Yasuhiko; Saito, Shinichi

2015-05-01

High electron doping of germanium (Ge) is considered to be an important process to convert Ge into an optical gain material and realize a monolithic light source integrated on a silicon chip. Spin-on doping is a method that offers the potential to achieve high doping concentrations without affecting crystalline qualities over other methods such as ion implantation and in-situ doping during material growth. However, a standard spin-on doping recipe satisfying these requirements is not yet available. In this paper we examine spin-on doping of Ge-on-insulator (GOI) wafers. Several issues were identified during the spin-on doping process and specifically the adhesion between Ge and the oxide, surface oxidation during activation, and the stress created in the layers due to annealing. In order to mitigate these problems, Ge disks were first patterned by dry etching followed by spin-on doping. Even by using this method to reduce the stress, local peeling of Ge could still be identified by optical microscope imaging. Nevertheless, most of the Ge disks remained after the removal of the glass. According to the Raman data, we could not identify broadening of the lineshape which shows a good crystalline quality, while the stress is slightly relaxed. We also determined the linear increase of the photoluminescence intensity by increasing the optical pumping power for the doped sample, which implies a direct population and recombination at the gamma valley.

Structure of spin excitations in heavily electron-doped Li 0.8Fe 0.2ODFeSe superconductors

DOE PAGES

Pan, Bingying; Shen, Yao; Hu, Die; ...

2017-07-25

Heavily electron-doped iron-selenide high-transition-temperature (high-T c) superconductors, which have no hole Fermi pockets, but have a notably high T c, have challenged the prevailing s± pairing scenario originally proposed for iron pnictides containing both electron and hole pockets. The microscopic mechanism underlying the enhanced superconductivity in heavily electron-doped iron-selenide remains unclear. Here, we used neutron scattering to study the spin excitations of the heavily electron-doped iron-selenide material Li 0.8Fe 0.2ODFeSe (T c = 41 K). Our data revealed nearly ring-shaped magnetic resonant excitations surrounding (π, π) at ~21 meV. As the energy increased, the spin excitations assumed a diamond shape,more » and they dispersed outward until the energy reached ~60 meV and then inward at higher energies. The observed energy-dependent momentum structure and twisted dispersion of spin excitations near (π, π) are analogous to those of hole-doped cuprates in several aspects, thus implying that such spin excitations are essential for the remarkably high T c in these materials.« less

In situ self-sacrificed template synthesis of vanadium nitride/nitrogen-doped graphene nanocomposites for electrochemical capacitors.

PubMed

Liu, Hong-Hui; Zhang, Hong-Ling; Xu, Hong-Bin; Lou, Tai-Ping; Sui, Zhi-Tong; Zhang, Yi

2018-03-15

Vanadium nitride and graphene have been widely used as pseudo-capacitive and electric double-layer capacitor electrode materials for electrochemical capacitors, respectively. However, the poor cycling stability of vanadium nitride and the low capacitance of graphene impeded their practical applications. Herein, we demonstrated an in situ self-sacrificed template method for the synthesis of vanadium nitride/nitrogen-doped graphene (VN/NGr) nanocomposites by the pyrolysis of a mixture of dicyandiamide, glucose, and NH 4 VO 3 . Vanadium nitride nanoparticles of the size in the range of 2 to 7 nm were uniformly embedded into the nitrogen-doped graphene skeleton. Furthermore, the VN/NGr nanocomposites with a high specific surface area and pore volume showed a high specific capacitance of 255 F g -1 at 10 mV s -1 , and an excellent cycling stability (94% capacitance retention after 2000 cycles). The excellent capacitive properties were ascribed to the excellent conductivity of nitrogen-doped graphene, high surface area, high pore volume, and the synergistic effect between vanadium nitride and nitrogen-doped graphene.

Superconductivity in dense carbon-based materials

DOE PAGES

Lu, Siyu; Liu, Hanyu; Naumov, Ivan I.; ...

2016-03-08

Guided by a simple strategy in searching of new superconducting materials we predict that high temperature superconductivity can be realized in classes of high-density materials having strong sp 3 chemical bonding and high lattice symmetry. Here, we examine in detail sodalite carbon frameworks doped with simple metals such as Li, Na, and Al. Though such materials share some common features with doped diamond, their doping level is not limited and the density of states at the Fermi level in them can be as high as that in the renowned MgB 2. Altogether, with other factors, this boosts the superconducting temperaturemore » (T c) in the materials investigated to higher levels compared to doped diamond. For example, the superconducting T c of sodalite-like NaC 6 is predicted to be above 100 K. This phase and a series of other sodalite-based superconductors are predicted to be metastable phases but are dynamically stable. In owing to the rigid carbon framework of these and related dense carbon-materials, these doped sodalite-based structures could be recoverable as potentially useful superconductors.« less

Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanghavi, Rahul P.; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T

High temperature oxygen sensors are widely used for exhaust gas monitoring in automobiles. This particular study explores the use of thin film single crystalline samaria doped ceria as the oxygen sensing material. Desired signal to noise ratio can be achieved in a material system with high conductivity. From previous studies it is established that 6 atomic percent samarium doping is the optimum concentration for thin film samaria doped ceria to achieve high ionic conductivity. In this study, the conductivity of the 6 atomic percent samaria doped ceria thin film is measured as a function of the sensing film thickness. Hysteresismore » and dynamic response of this sensing platform is tested for a range of oxygen pressures from 0.001 Torr to 100 Torr for temperatures above 673 K. An attempt has been made to understand the physics behind the thickness dependent conductivity behavior of this sensing platform by developing a hypothetical operating model and through COMSOL simulations. This study can be used to identify the parameters required to construct a fast, reliable and compact high temperature oxygen sensor.« less

Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer.

PubMed

Geier, Michael L; Moudgil, Karttikay; Barlow, Stephen; Marder, Seth R; Hersam, Mark C

2016-07-13

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

High carrier concentration p-type transparent conducting oxide films

DOEpatents

Yan, Yanfa; Zhang, Shengbai

2005-06-21

A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

Highly reproducible alkali metal doping system for organic crystals through enhanced diffusion of alkali metal by secondary thermal activation.

PubMed

Lee, Jinho; Park, Chibeom; Song, Intek; Koo, Jin Young; Yoon, Taekyung; Kim, Jun Sung; Choi, Hee Cheul

2018-05-16

In this paper, we report an efficient alkali metal doping system for organic single crystals. Our system employs an enhanced diffusion method for the introduction of alkali metal into organic single crystals by controlling the sample temperature to induce secondary thermal activation. Using this system, we achieved intercalation of potassium into picene single crystals with closed packed crystal structures. Using optical microscopy and Raman spectroscopy, we confirmed that the resulting samples were uniformly doped and became K 2 picene single crystal, while only parts of the crystal are doped and transformed into K 2 picene without secondary thermal activation. Moreover, using a customized electrical measurement system, the insulator-to-semiconductor transition of picene single crystals upon doping was confirmed by in situ electrical conductivity and ex situ temperature-dependent resistivity measurements. X-ray diffraction studies showed that potassium atoms were intercalated between molecular layers of picene, and doped samples did not show any KH- nor KOH-related peaks, indicating that picene molecules are retained without structural decomposition. During recent decades, tremendous efforts have been exerted to develop high-performance organic semiconductors and superconductors, whereas as little attention has been devoted to doped organic crystals. Our method will enable efficient alkali metal doping of organic crystals and will be a resource for future systematic studies on the electrical property changes of these organic crystals upon doping.

Self-compensation in arsenic doping of CdTe

DOE PAGES

Ablekim, Tursun; Swain, Santosh K.; Yin, Wan -Jian; ...

2017-07-04

Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied defect structures in As-doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type doping. Two As-doped CdTe with varying acceptor density and two undoped CdTe were grown in Cd-rich and Te-rich environments. The defect structures were investigated by thermoelectric-effect spectroscopy (TEES), and first-principles calculations were used for identifying and assigning the experimentally observed defects. Measurementsmore » revealed activation of As is very low in both As-doped samples with very short lifetimes indicating strong compensation and the presence of significant carrier trapping defects. Defect studies suggest two acceptors and one donor level were introduced by As doping with activation energies at ~88 meV, ~293 meV and ~377 meV. In particular, the peak shown at ~162 K in the TEES spectra is very prominent in both As-doped samples, indicating a signature of AX-center donors. In conclusion, the AX-centers are believed to be responsible for most of the compensation because of their low formation energy and very prominent peak intensity in TEES spectra.« less

Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

NASA Astrophysics Data System (ADS)

Ravichandran, K.; Muruganantham, G.; Sakthivel, B.

2009-11-01

Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO 2:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl 2 precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08×10 14 lines/m 2) when compared with that of the undoped film (13.2×10 14 lines/m 2), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 Ω/□) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl 2 precursor (without using methanol or ethanol).

Self-compensation in arsenic doping of CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ablekim, Tursun; Swain, Santosh K.; Yin, Wan -Jian

Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied defect structures in As-doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type doping. Two As-doped CdTe with varying acceptor density and two undoped CdTe were grown in Cd-rich and Te-rich environments. The defect structures were investigated by thermoelectric-effect spectroscopy (TEES), and first-principles calculations were used for identifying and assigning the experimentally observed defects. Measurementsmore » revealed activation of As is very low in both As-doped samples with very short lifetimes indicating strong compensation and the presence of significant carrier trapping defects. Defect studies suggest two acceptors and one donor level were introduced by As doping with activation energies at ~88 meV, ~293 meV and ~377 meV. In particular, the peak shown at ~162 K in the TEES spectra is very prominent in both As-doped samples, indicating a signature of AX-center donors. In conclusion, the AX-centers are believed to be responsible for most of the compensation because of their low formation energy and very prominent peak intensity in TEES spectra.« less

Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

NASA Astrophysics Data System (ADS)

Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3

NASA Astrophysics Data System (ADS)

Maurya, V. K.; Dong, C. L.; Chen, C. L.; Asokan, K.; Patnaik, S.

2018-06-01

We report on the synthesis, and structural - magnetic characterizations of Mn doped Bi2Se3 towards achieving a magnetically doped topological insulator. High quality single crystals of MnxBi2-xSe3 (x = 0, 0.03, 0.05, 0.1) are grown and analysed by X-ray diffraction (XRD), Low Energy Electron Diffraction (LEED), Scanning electron microscopy (SEM), and X-ray absorption near-edge structure spectroscopy (XANES). Magnetic properties of these samples under ZFC-FC protocol and isothermal magnetization confirm ferromagnetic correlation above x = 0.03 value. XANES measurements confirm that the dopant Mn is in Mn2+ state. This is further reconfirmed to be in high spin state by fitting magnetic data with Brillouin function for J = 5/2. Both Hall and Seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of Mn doping. We propose Mn doped Bi2Se3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

A general quantitative pH sensor developed with dicyandiamide N-doped high quantum yield graphene quantum dots.

PubMed

Wu, Zhu Lian; Gao, Ming Xuan; Wang, Ting Ting; Wan, Xiao Yan; Zheng, Lin Ling; Huang, Cheng Zhi

2014-04-07

A general quantitative pH sensor for environmental and intracellular applications was developed by the facile hydrothermal preparation of dicyandiamide (DCD) N-doped high quantum yield (QY) graphene quantum dots (GQDs) using citric acid (CA) as the carbon source. The obtained N-doped GQDs have excellent photoluminesence (PL) properties with a relatively high QY of 36.5%, suggesting that N-doped chemistry could promote the QY of carbon nanomaterials. The possible mechanism for the formation of the GQDs involves the CA self-assembling into a nanosheet structure through intermolecular H-bonding at the initial stage of the reaction, and then the pure graphene core with many function groups formed through the dehydration between the carboxyl and hydroxyl of the intermolecules under hydrothermal conditions. These N-doped GQDs have low toxicity, and are photostable and pH-sensitive between 1.81 to 8.96, giving a general pH sensor with a wide range of applications from real water to intracellular contents.

Yb-doped aluminophosphosilicate ternary fiber with high efficiency and excellent laser stability

NASA Astrophysics Data System (ADS)

Li, Yuwei; Peng, Kun; Zhan, Huan; Liu, Shuang; Ni, Li; Wang, Yuying; Yu, Juan; Wang, Xiaolong; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

2018-03-01

By using chelate precursor doping technique and traditional modified chemical vapor deposition system, we fabricated Yb-doped aluminophosphosilicate (Al2O3-P2O5-SiO2, ternary Yb-APS) large-mode-area fiber and reported on its laser performance. The fiber preform was doped with Al, P and Yb with concentration of ∼8000 ppm, ∼1700 ppm and ∼400 ppm in molar percent, respectively. Tested with master oscillator power amplifier system, the home-made Yb-APS fiber was found to present 1.02 kW at 1061.1 nm with a high slope efficiency of 81.2% and excellent laser stability with power fluctuation less than ±1.1% for over 10 h. Compared with Yb-doped aluminosilicate (Al2O3-SiO2, binary Yb-AS) fiber, the introduction of P2O5 effectively suppressed photodarkening effect even the P/Al ratio is much less than 1, indicating that Yb-APS fiber is a better candidate for high power fiber lasers.

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sermage, B.; Essa, Z.; Taleb, N.

2016-04-21

The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C{sup 2} versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, wemore » show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.« less

Cellular Response to Doping of High Porosity Foamed Alumina with Ca, P, Mg, and Si.

PubMed

Soh, Edwin; Kolos, Elizabeth; Ruys, Andrew J

2015-03-13

Foamed alumina was previously synthesised by direct foaming of sulphate salt blends varying ammonium mole fraction (AMF), foaming heating rate and sintering temperature. The optimal product was produced with 0.33AMF, foaming at 100 °C/h and sintering at 1600 °C. This product attained high porosity of 94.39%, large average pore size of 300 µm and the highest compressive strength of 384 kPa. To improve bioactivity, doping of porous alumina by soaking in dilute or saturated solutions of Ca, P, Mg, CaP or CaP + Mg was done. Saturated solutions of Ca, P, Mg, CaP and CaP + Mg were made with excess salt in distilled water and decanted. Dilute solutions were made by diluting the 100% solution to 10% concentration. Doping with Si was done using the sol gel method at 100% concentration only. Cell culture was carried out with MG63 osteosarcoma cells. Cellular response to the Si and P doped samples was positive with high cell populations and cell layer formation. The impact of doping with phosphate produced a result not previously reported. The cellular response showed that both Si and P doping improved the biocompatibility of the foamed alumina.

3D nanostructured N-doped TiO2 photocatalysts with enhanced visible absorption.

PubMed

Cho, Sumin; Ahn, Changui; Park, Junyong; Jeon, Seokwoo

2018-05-24

Considering the environmental issues, it is essential to develop highly efficient and recyclable photocatalysts in purification systems. Conventional TiO2 nanoparticles have strong intrinsic oxidizing power and high surface area, but are difficult to collect after use and rarely absorb visible light, resulting in low photocatalytic efficiency under sunlight. Here we develop a new type of highly efficient and recyclable photocatalyst made of a three-dimensional (3D) nanostructured N-doped TiO2 monolith with enhanced visible light absorption. To prepare the sample, an ultrathin TiN layer (∼10 nm) was conformally coated using atomic layer deposition (ALD) on 3D nanostructured TiO2. Subsequent thermal annealing at low temperature (550 °C) converted TiN to anatase phase N-doped TiO2. The resulting 3D N-doped TiO2 showed ∼33% enhanced photocatalytic performance compared to pure 3D TiO2 of equivalent thickness under sunlight due to the reduced bandgap, from 3.2 eV to 2.75 eV through N-doping. The 3D N-doped TiO2 monolith could be easily collected and reused at least 5 times without any degradation in photocatalytic performance.

High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser

PubMed Central

Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

2016-01-01

We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900–2000 nm. PMID:27416893

High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser.

PubMed

Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

2016-07-15

We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900-2000 nm.

UV-Vis-NIR spectroelectrochemical and in situ conductance studies of unusual stability of n- and p-doped poly(dimethyldioctylquaterthiophene-alt-oxadiazole) under high cathodic and anodic polarizations.

PubMed

Pomerantz, Z; Levi, M D; Salitra, G; Demadrille, R; Fisyuk, A; Zaban, A; Aurbach, D; Pron, A

2008-02-21

Combined CV studies and UV-Vis-NIR spectroelectrochemical investigations revealed an unusual stability of the p- and n-doped PMOThOD in the wide potential window of 4 V. The n-doping process occurs in this polymer down to -2.7 V (vs. Ag/Ag+) in a non-destructive way with the characteristic development of the omega3 transition as a function of the doping level. In situ electronic transport studies revealed a high conductivity of the n-doped polymer which implies high mobility of the negatively charged carriers in the freshly doped PMOThOD film electrodes. An increase in the cathodic polarization, long-term cycling of the film electrodes, especially of higher thickness, results in a growing contribution of the negatively charged carriers trapping to the redox properties of the PMOThOD. The trapping of the charged carriers reduces gradually the electronic conductance of the PMOThOD film, but its effect on the redox-capacity of the film (in a typical scan rates range up to 50 mV s(-1)) is only minor.

A novel approach to prepare optically active ion doped luminescent materials via electron beam evaporation into ionic liquids

DOE PAGES

Richter, K.; Lorbeer, C.; Mudring, A. -V.

2014-11-10

A novel approach to prepare luminescent materials via electron-beam evaporation into ionic liquids is presented which even allows doping of host lattices with ions that have a strong size mismatch. Thus, to prove this, MgF 2 nanoparticles doped with Eu 3+ were fabricated. The obtained nanoparticles featured an unusually high luminescence lifetime and the obtained material showed a high potential for application.

Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

NASA Astrophysics Data System (ADS)

Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

2012-02-01

In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007; Sandeep, K. M.

2016-05-23

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnOmore » thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.« less

Influence of magnetism and correlation on the spectral properties of doped Mott insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yao; Moritz, Brian; Chen, Cheng-Chien

Unraveling the nature of the doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. Here, for this purpose, we study the evolution of spectral properties upon doping Mott insulating states by utilizing the cluster perturbation theory on the Hubbard and t – J -like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is,more » in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.« less

Influence of magnetism and correlation on the spectral properties of doped Mott insulators

DOE PAGES

Wang, Yao; Moritz, Brian; Chen, Cheng-Chien; ...

2018-03-01

Unraveling the nature of the doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. Here, for this purpose, we study the evolution of spectral properties upon doping Mott insulating states by utilizing the cluster perturbation theory on the Hubbard and t – J -like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is,more » in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.« less

Photogeneration of refractive-index patterns in doped polyimide films.

PubMed

Chakravorty, K K

1993-05-01

A photosensitive benzophenone tetracarboxylic dianhyride-alkylated diamine polyimide formulation has been evaluated for application in an optical interconnection area. The refractive-index patterns in this material were optically recorded by UV-assisted photodoping of sensitizers. The polyimide films were selectively doped with benzoin-type photosensitizers such as benzildimethylketal and benzoin ethyl ether, which cause a decrease in the refractive index. High-dose UV irradiation that causes cross linking of the polyimide chains was also employed for augmenting the refractive-index difference to 0.017 between the doped and undoped regions. Refractive-index variations and lightguiding properties were investigated as a function of doping concentrations and other processing conditions. The author utilized this technique for the fabrication of embedded polyimide channel waveguides. The two photosensitizers have different effects on the waveguiding characteristics of the polyimide films. Losses for benzoin ethyl ether remained low whereas doping with benzildimethylketal caused significant increase in the waveguiding loss at high doping concentrations. Near-field imaging of the output from such waveguides shows good confinement of 815-nm light.

Photogeneration of refractive-index patterns in doped polyimide films

NASA Astrophysics Data System (ADS)

Chakravorty, K. K.

1993-05-01

A photosensitive benzophenone tetracarboxylic dianhyride-alkylated diamine polyimide formulation has been evaluated for application in an optical interconnection area. The refractive-index patterns in this material were optically recorded by UV-assisted photodoping of sensitizers. The polyimide films were selectively doped with benzoin-type photosensitizers such as benzildimethylketal and benzoin ethyl ether, which cause a decrease in the refractive index. High-dose UV irradiation that causes cross linking of the polyimide chains was also employed for augmenting the refractive-index difference to 0.017 between the doped and undoped regions. Refractive-index variations and lightguiding properties were investigated as a function of doping concentrations and other processing conditions. The author utilized this technique for the fabrication of embedded polyimide channel waveguides. The two photosensitizers have different effects on the waveguiding characteristics of the polyimide films. Losses for benzoin ethyl ether remained low whereas doping with benzildimethylketal caused significant increase in the waveguiding loss at high doping concentrations. Near-field imaging of the output from such waveguides shows good confinement of 815-nm light.

Probing the Electronic Structure of - and Electron-Doped High-Temperature Superconductors with Photoemission and X-Ray Absorption Spectroscopies

NASA Astrophysics Data System (ADS)

Lederman, Eli R.

1990-01-01

The electronic structures of hole- and electron -doped high temperature superconductors have been probed using x-ray absorption near-edge spectroscopy (XANES) and photoelectron emission spectroscopy (PES). These measurements have been performed on RBa_2Cu _3O_{rm 7-y} , La_{rm 2-x}Sr _{rm x}CuO _4 and Ln_{rm 2 -x}Ce_{rm x} CuO_{rm 4} for R = Y, Eu and Ln = Nd, Pr and Sm. The parameters x and y have been varied to include a range of hole and electron carrier densities and the undoped parent compounds. Previous XANES and PES results have indicated that unoccupied states of O 2p character can be associated with the carriers in the materials RBa_2 Cu_3O_{ rm 7-y} and La_{ rm 2-x}Sr_{rm x}CuO_4 and that the density of holes increases with O and Sr content, respectively. Conduction was hole-based in all known high-T_{ rm c} cuprates until the recent discovery of superconductivity in Ln_{rm 2-x}Ce_{rm x} CuO_4. Hall coefficient measurements have suggested that the carriers in this system are electrons added with Ce doping. It has been anticipated that these electron-doped materials will provide an important test for models of high temperature superconductivity. PES measurements are presented that show significant Cu 3d character in the valence band of these electron-based materials, but that the Cu^{2+} /Cu^{1+} ratio is unchanged by the level of Ce doping, indicating that doped electrons are itinerant rather than highly correlated. Resonant photoemission from the valence band indicates the presence of unoccupied O 2p states, but these holes are less abundant than in the hole-doped materials. Measurements of XANES at the O 1s edge suggest that unoccupied states of O 2p character in the electron -doped materials are not related to conduction in a simple way. The density of these holes is shown to decrease upon Ce doping and the process of reduction, despite the fact that both are necessary of superconductivity. Furthermore, whereas the O 2p holes are at E_{rm F} in the hole-doped materials, they are ~1 eV above E_{ rm F} in their electron-doped counterparts. A schematic of the band structure is proposed on the basis of these spectroscopic measurements.

Intrinsic and extrinsic doping of ZnO and ZnO alloys

NASA Astrophysics Data System (ADS)

Ellmer, Klaus; Bikowski, André

2016-10-01

In this article the doping of the oxidic compound semiconductor ZnO is reviewed with special emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the application of highly doped n-type ZnO as a transparent electrode, for instance in thin film solar cells. For prospective application of ZnO in other electronic devices (LEDs, UV photodetectors or power devices) p-type doping is required, which has been reported only minimally. Highly n-type doped ZnO can be prepared by doping with the group IIIB elements B, Al, Ga, and In, which act as shallow donors according to the simple hydrogen-like substitutional donor model of Bethe (1942 Theory of the Boundary Layer of Crystal Rectifiers (Boston, MA: MIT Rad Lab.)). Group IIIA elements (Sc, Y, La etc) are also known to act as shallow donors in ZnO, similarly explainable by the shallow donor model of Bethe. Some reports showed that even group IVA (Ti, Zr, Hf) and IVB (Si, Ge) elements can be used to prepare highly doped ZnO films—which, however, can no longer be explained by the simple hydrogen-like substitutional donor model. More probably, these elements form defect complexes that act as shallow donors in ZnO. On the other hand, group V elements on oxygen lattice sites (N, P, As, and Sb), which were viewed for a long time as typical shallow acceptors, behave instead as deep acceptors, preventing high hole concentrations in ZnO at room temperature. Also, ‘self’-compensation, i.e. the formation of a large number of intrinsic donors at high acceptor concentrations seems to counteract the p-type doping of ZnO. At donor concentrations above about 1020 cm-3, the electrical activation of the dopant elements is often less than 100%, especially in polycrystalline thin films. Reasons for the electrical deactivation of the dopant atoms are (i) the formation of dopant-defect complexes, (ii) the compensation of the electrons by acceptors (Oi, VZn) or (iii) the formation of secondary phases, for instance Al2O3, Ga2O3 etc. The strong influence of the different deposition methods and annealing conditions on the doping of ZnO is discussed. This review shows that, though it is one of the best-investigated oxide compound semiconductors over many decades, understanding of the details of the doping properties and mechanisms of zinc oxide is still in its infancy. Based on this review, prospective research opportunities are devised.

High temperature superconductivity in distinct phases of amorphous B-doped Q-carbon

NASA Astrophysics Data System (ADS)

Narayan, Jagdish; Bhaumik, Anagh; Sachan, Ritesh

2018-04-01

Distinct phases of B-doped Q-carbon are formed when B-doped and undoped diamond tetrahedra are packed randomly after nanosecond laser melting and quenching of carbon. By changing the ratio of doped to undoped tetrahedra, distinct phases of B-doped Q-carbon with concentration varying from 5.0% to 50.0% can be created. We have synthesized three distinct phases of amorphous B-doped Q-carbon, which exhibit high-temperature superconductivity following the Bardeen-Cooper-Schrieffer mechanism. The first phase (QB1) has a B-concentration ˜17 at. % (Tc = 37 K), the second phase (QB2) has a B-concentration ˜27 at. % (Tc = 55 K), and the third phase (QB3) has a B-concentration ˜45 at. % (Tc expected over 100 K). From geometrical modeling, we derive that QB1 consists of randomly packed tetrahedra, where one out of every three tetrahedra contains a B atom in the center which is sp3 bonded to four carbon atoms with a concentration of 16.6 at. %. QB2 consists of randomly packed tetrahedra, where one out of every two tetrahedra contains a B atom in the center which is sp3 bonded to four carbon atoms with a concentration of 25 at. %. QB3 consists of randomly packed tetrahedra, where every tetrahedron contains a B atom in the center which is sp3 bonded to four carbon atoms with a concentration of 50 at. %. We present detailed high-resolution TEM results on structural characterization, and EELS and Raman spectroscopy results on the bonding characteristics of B and C atoms. From these studies, we conclude that the high electronic density of states near the Fermi energy level coupled with moderate electron-phonon coupling result in high-temperature superconductivity in B-doped Q-carbon.

Clad-pumped Er-nanoparticle-doped fiber laser (Conference Presentation)

NASA Astrophysics Data System (ADS)

Baker, Colin C.; Friebele, E. Joseph; Rhonehouse, Daniel L.; Marcheschi, Barbara A.; Peele, John R.; Kim, Woohong; Sanghera, Jasbinder S.; Zhang, Jun; Chen, Youming; Pattnaik, Radha K.; Dubinskii, Mark

2017-03-01

Erbium-doped fiber lasers are attractive for directed energy weapons applications because they operate in a wavelength region that is both eye-safer and a window of high atmospheric transmission. For these applications a clad-pumped design is desirable, but the Er absorption must be high because of the areal dilution of the doped core vs. the pump cladding. High Er concentrations typically lead to Er ion clustering, resulting in quenching and upconversion. Nanoparticle (NP) doping of the core overcomes these problems by physically surrounding the Er ions with a cage of Al and O in the NP, which keeps them separated to minimize excited state energy transfer. A significant issue is obtaining high Er concentrations without the NP agglomeration that degrades the optical properties of the fiber core. We have developed the process for synthesizing stable Er-NP suspension which have been used to fabricate EDFs with Er concentrations >90 dB/m at 1532 nm. Matched clad fibers have been evaluated in a core-pumped MOPA with pump and signal wavelengths of 1475 and 1560 nm, respectively, and efficiencies of 72% with respect to absorbed pump have been obtained. We have fabricated both NP- and solution-doped double clad fibers, which have been measured in a clad-pumped laser testbed using a 1532 nm pump. The 1595 nm laser efficiency of the NP-doped fiber was 47.7%, which is high enough for what is believed to be the first laser experiment with the cladding pumped, NP-doped fiber. Further improvements are likely with a shaped cladding and new low-index polymer coatings with lower absorption in the 1500 - 1600 nm range.

High-performance iron oxide nanoparticles for magnetic particle imaging - guided hyperthermia (hMPI)

NASA Astrophysics Data System (ADS)

Bauer, Lisa M.; Situ, Shu F.; Griswold, Mark A.; Samia, Anna Cristina S.

2016-06-01

Magnetic particle imaging (MPI) is an emerging imaging modality that allows the direct and quantitative mapping of iron oxide nanoparticles. In MPI, the development of tailored iron oxide nanoparticle tracers is paramount to achieving high sensitivity and good spatial resolution. To date, most MPI tracers being developed for potential clinical applications are based on spherical undoped magnetite nanoparticles. For the first time, we report on the systematic investigation of the effects of changes in chemical composition and shape anisotropy on the MPI performance of iron oxide nanoparticle tracers. We observed a 2-fold enhancement in MPI signal through selective doping of magnetite nanoparticles with zinc. Moreover, we demonstrated focused magnetic hyperthermia heating by adapting the field gradient used in MPI. By saturating the iron oxide nanoparticles outside of a field free region (FFR) with an external static field, we can selectively heat a target region in our test sample. By comparing zinc-doped magnetite cubic nanoparticles with undoped spherical nanoparticles, we could show a 5-fold improvement in the specific absorption rate (SAR) in magnetic hyperthermia while providing good MPI signal, thereby demonstrating the potential for high-performance focused hyperthermia therapy through an MPI-guided approach (hMPI).Magnetic particle imaging (MPI) is an emerging imaging modality that allows the direct and quantitative mapping of iron oxide nanoparticles. In MPI, the development of tailored iron oxide nanoparticle tracers is paramount to achieving high sensitivity and good spatial resolution. To date, most MPI tracers being developed for potential clinical applications are based on spherical undoped magnetite nanoparticles. For the first time, we report on the systematic investigation of the effects of changes in chemical composition and shape anisotropy on the MPI performance of iron oxide nanoparticle tracers. We observed a 2-fold enhancement in MPI signal through selective doping of magnetite nanoparticles with zinc. Moreover, we demonstrated focused magnetic hyperthermia heating by adapting the field gradient used in MPI. By saturating the iron oxide nanoparticles outside of a field free region (FFR) with an external static field, we can selectively heat a target region in our test sample. By comparing zinc-doped magnetite cubic nanoparticles with undoped spherical nanoparticles, we could show a 5-fold improvement in the specific absorption rate (SAR) in magnetic hyperthermia while providing good MPI signal, thereby demonstrating the potential for high-performance focused hyperthermia therapy through an MPI-guided approach (hMPI). Electronic supplementary information (ESI) available: Detailed IONP synthetic methods, description of magnetic particle relaxometer set-up, TEM of reference IONP (Senior Scientific PrecisionMRX™ 25 nm oleic acid-coated nanoparticles), concentration dependent PSF of all IONP samples, PSF and SAR of Zn-Sph and Zn-Cube mixture sample, upper right quadrant of field-dependent hysteresis curve labelled with static field strengths, and the magnetic hyperthermia temperature profiles with and without the presence of external magnetic fields. See DOI: 10.1039/c6nr01877g

Highly sensitive H2 gas sensor of Co doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Bhati, Vijendra Singh; Ranwa, Sapana; Kumar, Mahesh

2018-04-01

In this report, the hydrogen gas sensing properties based on Co doped ZnO nanostructures are explored. The undoped and Co doped nanostructures were grown by RF magnetron sputtering system, and its structural, morphological, and hydrogen sensing behavior are investigated. The maximum relative response was occurred by the 2.5% Co doped ZnO nanostructures among undoped and other doped sensors. The enhancement of relative response might be due to large chemisorbed sites formation on the ZnO surface for the reaction to hydrogen gas.

Fermi level dependence of hydrogen diffusivity in GaN

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Pearton, S. J.; Ren, F.; Theys, B.; Jomard, F.; Teukam, Z.; Dmitriev, V. A.; Nikolaev, A. E.; Usikov, A. S.; Nikitina, I. P.

2001-09-01

Hydrogen diffusion studies were performed in GaN samples with different Fermi level positions. It is shown that, at 350 °C, hydrogen diffusion is quite fast in heavily Mg doped p-type material with the Fermi level close to Ev+0.15 eV, considerably slower in high-resistivity p-GaN(Zn) with the Fermi level Ev+0.9 eV, while for conducting and semi-insulating n-GaN samples with the Fermi level in the upper half of the band gap no measurable hydrogen diffusion could be detected. For these latter samples it is shown that higher diffusion temperature of 500 °C and longer times (50 h) are necessary to incorporate hydrogen to appreciable depth. These findings are in line with previously published theoretical predictions of the dependence of hydrogen interstitials formation in GaN on the Fermi level position.

Highly improved ethanol gas-sensing performance of mesoporous nickel oxides nanowires with the stannum donor doping.

PubMed

Wei, Junqi; Li, Xiaoqing; Han, Yanbing; Xu, Jingcai; Jin, Hongxiao; Jin, Dingfeng; Peng, Xiaoling; Hong, Bo; Li, Jing; Yang, Yanting; Ge, Hongliang; Wang, Xinqing

2018-06-15

Mesoporous nickel oxides (NiO) and stannum(Sn)-doped NiO nanowires (NWs) were synthesized by using SBA-15 templates with the nanocasting method. X-ray diffraction, transmission electron microscope, energy dispersive spectrometry, nitrogen adsorption/desorption isotherm and UV-vis spectrum were used to characterize the phase structure, components and microstructure of the as-prepared samples. The gas-sensing analysis indicated that the Sn-doping could greatly improve the ethanol sensitivity for mesoporous NiO NWs. With the increasing Sn content, the ethanol sensitivity increased from 2.16 for NiO NWs up to the maximum of 15.60 for Ni 0.962 Sn 0.038 O 1.038 , and then decreased to 12.24 for Ni 0.946 Sn 0.054 O 1.054 to 100 ppm ethanol gas at 340 °C. The high surface area from the Sn-doping improved the adsorption of oxygen on the surface of NiO NWs, resulting in the smaller surface resistance in air. Furthermore, owing to the recombination of the holes in hole-accumulation lay with the electrons from the donor impurity level and the increasing the body defects for Sn-doping, the total resistance in ethanol gas enhanced greatly. It was concluded that the sensitivity of Sn-doped NiO NWs based sensor could be greatly improved by the higher surface area and high-valence donor substitution from Sn-doping.

Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

NASA Astrophysics Data System (ADS)

Hu, Zijun; Chen, Da; Yang, Pan; Yang, Lijun; Qin, Laishun; Huang, Yuexiang; Zhao, Xiaochong

2018-05-01

In this work, high-performance inverted planar perovskite solar cells (PSCs) using sol-gel processed Y-doped NiO thin films as hole transport layer (HTL) were demonstrated. Y-doped NiO thin films containing different Y doping concentrations were successfully prepared through a simple sol-gel process. The Y doping could significantly improve the electrical conductivity of NiO thin film, and the photovoltaic performance of Y-doped NiO HTL-based PSC devices outperformed that of the pristine NiO HTL-based device. Notably, the PSC using a 5%Y-NiO HTL exhibited the champion performance with an open-circuit voltage (Voc) of 1.00 V, a short circuit current density (Jsc) of 23.82 mA cm-2, a fill factor (FF) of 68% and a power conversion efficiency (PCE) of 16.31%, resulting in a 27.62% enhancement in PCE in comparison with the NiO device. The enhanced performance of the Y-doped NiO device could be attributed to the improved hole mobility, the high quality compact active layer morphology, the more efficient charge extraction from perovskite absorber as well as the lower recombination probability of charge carriers. Thus, this work provides a simple and effective approach to improve the electrical conductivity of p-type NiO thin films for use as a promising HTL in high performance PSCs.

Highly improved ethanol gas-sensing performance of mesoporous nickel oxides nanowires with the stannum donor doping

NASA Astrophysics Data System (ADS)

Wei, Junqi; Li, Xiaoqing; Han, Yanbing; Xu, Jingcai; Jin, Hongxiao; Jin, Dingfeng; Peng, Xiaoling; Hong, Bo; Li, Jing; Yang, Yanting; Ge, Hongliang; Wang, Xinqing

2018-06-01

Mesoporous nickel oxides (NiO) and stannum(Sn)-doped NiO nanowires (NWs) were synthesized by using SBA-15 templates with the nanocasting method. X-ray diffraction, transmission electron microscope, energy dispersive spectrometry, nitrogen adsorption/desorption isotherm and UV–vis spectrum were used to characterize the phase structure, components and microstructure of the as-prepared samples. The gas-sensing analysis indicated that the Sn-doping could greatly improve the ethanol sensitivity for mesoporous NiO NWs. With the increasing Sn content, the ethanol sensitivity increased from 2.16 for NiO NWs up to the maximum of 15.60 for Ni0.962Sn0.038O1.038, and then decreased to 12.24 for Ni0.946Sn0.054O1.054 to 100 ppm ethanol gas at 340 °C. The high surface area from the Sn-doping improved the adsorption of oxygen on the surface of NiO NWs, resulting in the smaller surface resistance in air. Furthermore, owing to the recombination of the holes in hole-accumulation lay with the electrons from the donor impurity level and the increasing the body defects for Sn-doping, the total resistance in ethanol gas enhanced greatly. It was concluded that the sensitivity of Sn-doped NiO NWs based sensor could be greatly improved by the higher surface area and high-valence donor substitution from Sn-doping.

Method of making self-aligned lightly-doped-drain structure for MOS transistors

DOEpatents

Weiner, Kurt H.; Carey, Paul G.

2001-01-01

A process for fabricating lightly-doped-drains (LDD) for short-channel metal oxide semiconductor (MOS) transistors. The process utilizes a pulsed laser process to incorporate the dopants, thus eliminating the prior oxide deposition and etching steps. During the process, the silicon in the source/drain region is melted by the laser energy. Impurities from the gas phase diffuse into the molten silicon to appropriately dope the source/drain regions. By controlling the energy of the laser, a lightly-doped-drain can be formed in one processing step. This is accomplished by first using a single high energy laser pulse to melt the silicon to a significant depth and thus the amount of dopants incorporated into the silicon is small. Furthermore, the dopants incorporated during this step diffuse to the edge of the MOS transistor gate structure. Next, many low energy laser pulses are used to heavily dope the source/drain silicon only in a very shallow region. Because of two-dimensional heat transfer at the MOS transistor gate edge, the low energy pulses are inset from the region initially doped by the high energy pulse. By computer control of the laser energy, the single high energy laser pulse and the subsequent low energy laser pulses are carried out in a single operational step to produce a self-aligned lightly-doped-drain-structure.

Improved Li storage performance in SnO 2 nanocrystals by a synergetic doping

DOE PAGES

Wan, Ning; Lu, Xia; Wang, Yuesheng; ...

2016-01-06

Tin dioxide (SnO 2) is a widely investigated lithium (Li) storage material because of its easy preparation, two-step storage mechanism and high specific capacity for lithium-ion batteries (LIBs). In this contribution, a phase-pure cobalt-doped SnO 2 (Co/SnO 2) and a cobalt and nitrogen co-doped SnO 2 (Co-N/SnO 2) nanocrystals are prepared to explore their Li storage behaviors. It is found that the morphology, specific surface area, and electrochemical properties could be largely modulated in the doped and co-doped SnO 2 nanocrystals. Gavalnostatic cycling results indicate that the Co-N/SnO 2 electrode delivers a specific capacity as high as 716 mAh gmore » –1 after 50 cycles, and the same outstanding rate performance can be observed in subsequent cycles due to the ionic/electronic conductivity enhancement by co-doping effect. Further, microstructure observation indicates the existence of intermediate phase of Li 3N with high ionic conductivity upon cycling, which probably accounts for the improvements of Co-N/SnO 2 electrodes. Furthermore, we find that the method of synergetic doping into SnO 2 with Co and N, with which the electrochemical performances is enhanced remarkably, undoubtedly, will have an important influence on the material itself and community of LIBs as well.« less

Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2014-11-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a long wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.

Impact of carrier doping on electrical properties of laser-induced liquid-phase-crystallized silicon thin films for solar cell application

NASA Astrophysics Data System (ADS)

Umishio, Hiroshi; Matsui, Takuya; Sai, Hitoshi; Sakurai, Takeaki; Matsubara, Koji

2018-02-01

Large-grain-size (>1 mm) liquid-phase-crystallized silicon (LPC-Si) films with a wide range of carrier doping levels (1016-1018 cm-3 either of the n- or p-type) were prepared by irradiating amorphous silicon with a line-shaped 804 nm laser, and characterized for solar cell applications. The LPC-Si films show high electron and hole mobilities with maximum values of ˜800 and ˜200 cm2 V-1 s-1, respectively, at a doping level of ˜(2-4) × 1016 cm-3, while their carrier lifetime monotonically increases with decreasing carrier doping level. A grain-boundary charge-trapping model provides good fits to the measured mobility-carrier density relations, indicating that the potential barrier at the grain boundaries limits the carrier transport in the lowly doped films. The open-circuit voltage and short-circuit current density of test LPC-Si solar cells depend strongly on the doping level, peaking at (2-5) × 1016 cm-3. These results indicate that the solar cell performance is governed by the minority carrier diffusion length for the highly doped films, while it is limited by majority carrier transport as well as by device design for the lowly doped films.

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

NASA Astrophysics Data System (ADS)

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-01

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

PubMed

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-18

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 10(18) cm(-3) has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

A doped activated carbon prepared from polyaniline for high performance supercapacitors

NASA Astrophysics Data System (ADS)

Li, Limin; Liu, Enhui; Li, Jian; Yang, Yanjing; Shen, Haijie; Huang, Zhengzheng; Xiang, Xiaoxia; Li, Wen

A novel doped activated carbon has been prepared from H 2SO 4-doped polyaniline which is prepared by the oxypolymerization of aniline. The morphology, surface chemical composition and surface area of the carbon have been investigated by scanning electron microscope, X-ray photoelectron spectroscopy and Brunaner-Emmett-Teller measurement, respectively. Electrochemical properties of the doped activated carbon have been studied by cyclic voltammograms, galvanostatic charge/discharge, and electrochemical impedance spectroscopy measurements in 6 mol l -1 KOH. The specific capacitance of the carbon is as high as 235 F g -1, the specific capacitance hardly decreases at a high current density 11 A g -1 after 10,000 cycles, which indicates that the carbon possesses excellent cycle durability and may be a promising candidate for supercapacitors.

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT).

PubMed

Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

2016-11-22

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La 3+ donor-doped, Fe 3+ acceptor-doped and La 3+ /Fe 3+ -co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT)

PubMed Central

Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

2016-01-01

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT. PMID:28774067

Analysis of YBCO high temperature superconductor doped with silver nanoparticles and carbon nanotubes using Williamson-Hall and size-strain plot

NASA Astrophysics Data System (ADS)

Dadras, Sedigheh; Davoudiniya, Masoumeh

2018-05-01

This paper sets out to investigate and compare the effects of Ag nanoparticles and carbon nanotubes (CNTs) doping on the mechanical properties of Y1Ba2Cu3O7-δ (YBCO) high temperature superconductor. For this purpose, the pure and doped YBCO samples were synthesized by sol-gel method. The microstructural analysis of the samples is performed using X-ray diffraction (XRD). The crystalline size, lattice strain and stress of the pure and doped YBCO samples were estimated by modified forms of Williamson-Hall analysis (W-H), namely, uniform deformation model (UDM), uniform deformation stress model (UDSM) and the size-strain plot method (SSP). These results show that the crystalline size, lattice strain and stress of the YBCO samples declined by Ag nanoparticles and CNTs doping.

The Effect of High N-DOPED Anatase TiO2 on the Band Gap Narrowing and Redshift by First-Principles

NASA Astrophysics Data System (ADS)

Hou, Qingyu; Jin, Yongjun; Ying, Chun; Zhao, Erjun; Zhang, Yue; Dong, Hongying

2012-10-01

Anatase TiO2 supercells were studied by first-principles, in which one was undoped and another three were high N-doping. Partial densities of states, band structure, population and absorption spectrum were calculated. The calculated results indicated that in the condition of TiO2-xNx (x = 0.0625, 0.125, 0.25), the higher the doping concentration is, the shorter will be the lattice parameters parallel to the direction of c-axis. The strength of covalent bond significantly varied. The formation energy increases at first, and then decreases. The doping models become less stable as N-doping concentration increases. Meanwhile, the narrower the band gap is, the more significant will be the redshift, which is in agreement with the experimental results.

The fundamental science of nitrogen-doping of niobium superconducting cavities

NASA Astrophysics Data System (ADS)

Gonnella, Daniel Alfred

Doping of niobium superconducting RF cavities with impurities has been demonstrated to have the ability to significantly improve the cryogenic efficiency of the accelerating structures. Doping SRF cavities with nitrogen is a relatively simple additional step to cavity preparation that can make drastic improvements in a cavity's intrinsic quality factor, Q0. Nitrogen-doping consists of treating SRF cavities at high temperatures in a low nitrogen-atmosphere. This leads to two important effects: an improvement in Q0 at low fields, and the presence of an "anti-Q slope" in which the cryogenic efficiency of doped cavities actually improves at higher fields. After its initial discovery, nitrogen-doping showed real promise but many fundamental scientific questions remained about the process. Nitrogen-doped cavities consistently quenched at lower fields than un-doped cavities, cooling the cavities through their critical temperature slowly led to poor performance, and the mechanism behind the Q0 improvement was not well understood. This dissertation focuses on addressing these issues. Single-cell 1.3 GHz cavities were prepared with different nitrogen-dopings and their effects studied systematically. It was found that nitrogen-doping drastically lowers the mean free path of the RF penetration layer of the niobium, leading to a lowering of the temperature-dependent BCS resistance, RBCS, at low fields. Theoretical work to predict the anti-Q slope was compared with experimental results to more fundamentally understand the nature of the field dependence of RBCS. Nitrogen-doped cavities were found to have a much larger sensitivity of residual resistance from trapped magnetic flux than un-doped cavities. Fast cool downs with large spatial temperature gradients through Tc were found to more efficiently expel magnetic flux. The full dependence of this sensitivity to trapped magnetic flux was studied as a function of changing mean free path and found to be in good agreement with theoretical predictions. The nature of the low-field quench in nitrogen-doped cavities was also studied with high power pulsed measurements and found to be related to a lowering of the lower critical field, Bc1 due to lowering of the mean free path. Finally, five cryomodule tests were carried out on nitrogen-doped 9-cell cavities to understand how the cryomodule environment affects the performance of doped cavities. This is the first demonstration that environmental factors can be controlled to achieve high Q0 of more than 2.7x10 10 at 16 MV/m and 2.0 K in a cryomodule, meeting and exceeding the specification for LCLS-II. The work presented here represents a significant leap forward in the understanding of the underlying science behind nitrogen-doped cavities and demonstrates their readiness for use in future particle accelerators.

Effect on Electron Structure and Magneto-Optic Property of Heavy W-Doped Anatase TiO2

PubMed Central

Hou, Qingyu; Zhao, Chunwang; Guo, Shaoqiang; Mao, Fei; Zhang, Yue

2015-01-01

The spin or nonspin state of electrons in W-doped anatase TiO2 is very difficult to judge experimentally because of characterization method limitations. Hence, the effect on the microscopic mechanism underlying the visible-light effect of W-doped anatase TiO2 through the consideration of electronic spin or no-spin states is still unknown. To solve this problem, we establish supercell models of W-doped anatase TiO2 at different concentrations, followed by geometry optimization and energy calculation based on the first-principle planewave norm conserving pseudo-potential method of the density functional theory. Calculation results showed that under the condition of nonspin the doping concentration of W becomes heavier, the formation energy becomes greater, and doping becomes more difficult. Meanwhile, the total energy increases, the covalent weakens and ionic bonds strengthens, the stability of the W-doped anatase TiO2 decreases, the band gap increases, and the blue-shift becomes more significant with the increase of W doping concentration. However, under the condition of spin, after the band gap correction by the GGA+U method, it is found that the semimetal diluted magnetic semiconductors can be formed by heavy W-doped anatase TiO2. Especially, a conduction electron polarizability of as high as near 100% has been found for the first time in high concentration W-doped anatase TiO2. It will be able to be a promising new type of dilute magnetic semiconductor. And the heavy W-doped anatase TiO2 make the band gap becomes narrower and absorption spectrum red-shift. PMID:25955308

Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2016-07-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current-voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current-voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.

Fiber Optical Parametric Oscillator for High Power, High Efficiency Short-Wavelength Generation

DTIC Science & Technology

2010-12-05

the spectral region about 1550 nm, this project has explored the possibility of using ytterbium - doped fiber lasers (YDFL) and amplifiers (YDFA) as...integration. From this point of view, an ytterbium - doped fiber -based pump source looks most attractive. Of particular interest is the master- oscillator... ytterbium - doped fiber amplifiers (YDFA). The MOPA constructed for this work is shown in Figure 1. It consists of a CW fiber ring-laser centered at

Assessment of effect of Yb3+ ion pairs on a highly Yb-doped double-clad fibre laser

NASA Astrophysics Data System (ADS)

Vallés, J. A.; Martín, J. C.; Berdejo, V.; Cases, R.; Álvarez, J. M.; Rebolledo, M. Á.

2018-03-01

Using a previously validated characterization method based on the careful measurement of the characteristic parameters and fluorescence emission spectra of a highly Yb-doped double-clad fibre, we evaluate the contribution of ion pair induced processes to the output power of a double-clad Yb-doped fibre ring laser. This contribution is proved to be insignificant, contrary to analysis by other authors, who overestimate the role of ion pairs.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

NASA Astrophysics Data System (ADS)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Connectivity, Doping, and Anisotropy in Highly Dense Magnesium Diboride (MgB2)

NASA Astrophysics Data System (ADS)

Li, Guangze

Magnesium diboride (MgB2) is a superconducting material which can be potentially used in many applications such as magnetic resonance imaging system (MRI), wind turbine generators and high energy physics facilities. The major advantages of MgB2 over other superconductors include its relatively high critical temperature of about 39 K, its low cost of raw materials, its simple crystal structure, and its round multifilament form when in the form of superconducting wires. Over the past fourteen years, much effort has been made to develop MgB2 wires with excellent superconducting properties, particularly the critical current density J c. However, this research has been limited by technical difficulties such as high porosity and weak connectivity in MgB2, relatively small flux pinning strength, low upper critical field B c2 and relatively high anisotropy. The goal of this dissertation is to understand the relationship between superconducting properties, microstructure, and reaction mechanisms in MgB 2. In particular, the influences of connectivity, B c2, anisotropy and flux pinning were investigated in terms of the effects of these variables on the Jcs and n-values of MgB2 superconducting wires (n-value is a parameter which indicates the sharpness of resistive V-I transition). The n -values of traditional "Powder in Tube (PIT)" processed MgB2 wires were improved by optimizing precursor species after the identification of microstructural defects such as so-called "sausaging problems". Also, it was found that "high porosity and weak connectivity" was one of the most critical issues which limited the J c performance in typical MgB2. To overcome this problem, highly dense, well-connected MgB2 conductors were successfully fabricated by adopting an innovative "Advanced Internal Magnesium Infiltration (AIMI)" process. A careful study on the reaction kinetics together with the microstructural evidence demonstrated how the MgB2 layer was formed as the infiltration process proceeded. As a result, it is possible to control the MgB2 layer growth in the AIMI-processed MgB 2 wires. The best AIMI wires, with improved density and connectivity, accomplished an outstanding layer Jc, which was 1.0 x 105 A/cm2 at 4.2 K and 10 T, nearly 10 times higher than the Jcs of PIT wires. The engineering Je of AIMI wires, namely the critical current over the whole cross-sectional area in the wire, achieved 1.7 x 104 A/cm2 at 4.2 K, 10 T, 200 % higher than those of PIT wires. Finally, two promising dopants, Dy2O3 and O, were engineered to incorporate with MgB2. Dy 2O3 nanopowders, co-doped with C in AIMI wires, enhanced the Jc performance at elevated temperatures such as 20 K. Oxygen, on the other hand, doped into MgB2 thin films through a newly-developed O2 annealing process, improved Bc2 to 14 T at 21 K. Both of the doping studies were helpful to understand the superconducting nature of MgB2.

[Doping. High-tech cheating in sport].

PubMed

Striegel, H; Simon, P

2007-07-01

Today, doping is no longer limited to the classical drugs with well known effects and side effects. Older generation anabolic steroids are used mainly in fitness and recreational sports. In contrast, due to doping tests, substances used in competitive sports include peptide hormones, medications not yet approved, and even specially developed drugs, such as designer steroids. Of the peptide hormones, particularly growth hormones (human growth hormone), erythropoietin and generics, insulin, and presumably insulin-like growth factor 1 are used. Substance groups potentially relevant for doping are selective androgen receptor modulators and gene therapy drugs. For most of these, there is no knowledge about side effects in healthy individuals, and no adequate doping tests. Therefore, anti-doping measures cannot rely solely on the continual improvement of doping analyses, but should include increased measures for doping prevention. Not only sports organizations, but also governmental agencies should be involved in developing and implementing these measures.

Doped colloidal artificial spin ice

DOE PAGES

Libál, A.; Reichhardt, C. J. Olson; Reichhardt, C.

2015-10-07

We examine square and kagome artificial spin ice for colloids confined in arrays of double-well traps. Conversely, magnetic artificial spin ices, unlike colloidal and vortex artificial spin ice realizations, allow creation of doping sites through double occupation of individual traps. We find that doping square and kagome ice geometries produces opposite effects. For square ice, doping creates local excitations in the ground state configuration that produce a local melting effect as the temperature is raised. In contrast, the kagome ice ground state can absorb the doping charge without generating non-ground-state excitations, while at elevated temperatures the hopping of individual colloidsmore » is suppressed near the doping sites. Our results indicate that in the square ice, doping adds degeneracy to the ordered ground state and creates local weak spots, while in the kagome ice, which has a highly degenerate ground state, doping locally decreases the degeneracy and creates local hard regions.« less

Doped colloidal artificial spin ice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Libál, A.; Reichhardt, C. J. Olson; Reichhardt, C.

We examine square and kagome artificial spin ice for colloids confined in arrays of double-well traps. Conversely, magnetic artificial spin ices, unlike colloidal and vortex artificial spin ice realizations, allow creation of doping sites through double occupation of individual traps. We find that doping square and kagome ice geometries produces opposite effects. For square ice, doping creates local excitations in the ground state configuration that produce a local melting effect as the temperature is raised. In contrast, the kagome ice ground state can absorb the doping charge without generating non-ground-state excitations, while at elevated temperatures the hopping of individual colloidsmore » is suppressed near the doping sites. Our results indicate that in the square ice, doping adds degeneracy to the ordered ground state and creates local weak spots, while in the kagome ice, which has a highly degenerate ground state, doping locally decreases the degeneracy and creates local hard regions.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuping, Duan, E-mail: duanyp@dlut.edu.c; Jia, Zhang; Hui, Jing

Fe-doped MnO{sub 2} with a hollow sea urchin-like ball chain shape was first synthesized under a high magnetic field of 10 T. The formation mechanism was investigated and discussed in detail. The synthesized samples were characterized by XRD, SEM, TEM, EMPA, and vector network analysis. By doping MnO{sub 2} with Fe, the relative complex permittivity of MnO{sub 2} and its corresponding loss tangent clearly decreases, but its relative complex permeability and its corresponding loss tangent markedly increases. Moreover, the theoretically calculated values of reflection loss show that with increasing the Fe content, the as-prepared Fe-doped MnO{sub 2} exhibits good microwavemore » absorption capability. -- Graphical Abstract: Fe-doped MnO{sub 2} with a hollow sea urchin-like ball chain shape was first synthesized in a high magnetic field of 10 T via a simple chemical process. Display Omitted Highlights: {yields} Fe-doped MnO{sub 2} with a hollow sea urchin-like ball chain shape was first synthesized. {yields} We investigated formation mechanism and electromagnetic properties of the Fe-doped MnO{sub 2}. {yields} By doping MnO{sub 2} with Fe, the electromagnetic properties are improved obviously.« less

VOx effectively doping CVD-graphene for transparent conductive films

NASA Astrophysics Data System (ADS)

Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

2016-11-01

Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

DOE PAGES

Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; ...

2016-04-11

In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures havemore » been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.« less

Effect of Cr doping on the structural, morphological, optical and electrical properties of indium tin oxide films

NASA Astrophysics Data System (ADS)

Mirzaee, Majid; Dolati, Abolghasem

2015-03-01

We report on the preparation and characterization of high-purity chromium (0.5-2.5 at.%)-doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel-mediated dip coating. The effects of different Cr-doping contents on structural, morphological, optical and electrical properties of the films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy and four-point probe methods. XRD showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Cr doping. FESEM micrographs show that grain size decreased with increasing the Cr-doping content. A method to determine chromium species in the sample was developed through the decomposition of the Cr 2 p XPS spectrum in Cr6+ and Cr3+ standard spectra. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum sheet resistance of 4,300 Ω/Sq and an average optical transmittance of 85 % in the visible region with a band gap of 3.421 eV, were achieved for the films doped with Cr-doping content of 2 at.%.

Influence of a novel co-doping (Zn + F) on the physical properties of nano structured (1 1 1) oriented CdO thin films applicable for window layer of solar cell

NASA Astrophysics Data System (ADS)

Anitha, M.; Saravanakumar, K.; Anitha, N.; Amalraj, L.

2018-06-01

Un-doped and co-doped (Zn + F) cadmium oxide (CdO) thin films were prepared by modified spray pyrolysis technique using a nebulizer on glass substrates kept at 200 °C. They were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy, Hall Effect and photoluminescence (PL) respectively. The thin films were having thickness in the range of 520-560 nm. They were well crystalline and displayed high transparency of about >70% in the visible region. It was clearly seen from the SEM photographs that co-doping causes notable changes in the surface morphology. Electrical study exhibited the resistivity of co-doped CdO thin films drastically fell to 1.43 × 10-4 Ω-cm compared with the un-doped CdO thin film. The obtained PL spectra were well corroborated with the structural and optical studies. The high transparency, wide band gap energy and enhanced electrical properties obtained infer that Zn + F co-doped CdO thin films find application in optoelectronic devices, especially in window layer of solar cells.

Controlling the Photocorrosion of Zinc Sulfide Nanoparticles in Water by Doping with Chloride and Cobalt Ions.

PubMed

Weide, Philipp; Schulz, Katharina; Kaluza, Stefan; Rohe, Markus; Beranek, Radim; Muhler, Martin

2016-12-06

Photodegradation under UV light irradiation is a major drawback in photocatalytic applications of sulfide semiconductors. ZnS nanoparticles were doped with very low amounts of chloride or cobalt ions in the ppm range and codoped with chloride and cobalt ions during their synthesis by precipitation in aqueous solution followed by calcination. The high-temperature wurtzite phase annealed at 800 °C had a high susceptibility to UV irradiation in water, while the low-temperature zincblende phase annealed at 400 °C was found to be stable. Chlorine doping increased the rate of photocorrosion in water, whereas cobalt doping led to a stabilization of the ZnS nanoparticles. Based on photochemical and spectroscopic investigations applying UV/vis, X-ray photoelectron, and photoluminescence spectroscopy, the increased susceptibility of Cl-doped ZnS is ascribed to a higher number of surface point defects, whereas the stabilization by Co 2+ is caused by additional recombination pathways for the charge carriers in the bulk, thus avoiding photocorrosion processes at the surface. Additional doping of Cl-doped ZnS with cobalt ions was found to counteract the detrimental effect of the chloride ions efficiently.

Exploring high power, extreme wavelength operating potential of rare-earth-doped silica fiber

NASA Astrophysics Data System (ADS)

Zhou, Pu; Li, Ruixian; Xiao, Hu; Huang, Long; Zhang, Hanwei; Leng, Jinyong; Chen, Zilun; Xu, Jiangmin; Wu, Jian; Wang, Xiong

2017-08-01

Ytterbium-doped fiber laser (YDFL) and Thulium doped fiber laser (TDFL) have been two kinds of the most widely studied fiber laser in recent years. Although both silica-based Ytterbium-doped fiber and Thulium doped fiber have wide emission spectrum band (more than 200 nm and 400 nm, respectively), the operation spectrum region of previously demonstrated high power YDFL and TDFL fall into 1060-1100 nm and 1900-2050nm. Power scaling of YDFL and TDFL operates at short-wavelength or long-wavelength band, especially for extreme wavelength operation, although is highly required in a large variety of application fields, is quite challenging due to small net gain and strong amplified spontaneous emission (ASE). In this paper, we will present study on extreme wavelength operation of high power YDFL and TDFL in our group. Comprehensive mathematical models are built to investigate the feasibility of high power operation and propose effective technical methods to achieve high power operation. We have achieved (1) Diodepumped 1150nm long wavelength YDFL with 120-watt level output power (2) Diode-pumped 1178nm long wavelength YDFL operates at high temperature with 30-watt level output power (3) Random laser pumped 2153nm long wavelength TDFL with 20-watt level output power (4) Diode-pumped 1018nm short wavelength YDFL with a record 2 kilowatt output power is achieved by using home-made fiber combiner.

Transition‐Metal‐Doped NIR‐Emitting Silicon Nanocrystals

PubMed Central

Chandra, Sourov; Masuda, Yoshitake

2017-01-01

Abstract Impurity‐doping in nanocrystals significantly affects their electronic properties and diversifies their applications. Herein, we report the synthesis of transition metal (Mn, Ni, Co, Cu)‐doped oleophilic silicon nanocrystals (SiNCs) through hydrolysis/polymerization of triethoxysilane with acidic aqueous metal salt solutions, followed by thermal disproportionation of the resulting gel into a doped‐Si/SiO2 composite that, upon HF etching and hydrosilylation with 1‐n‐octadecene, produces free‐standing octadecyl‐capped doped SiNCs (diameter≈3 to 8 nm; dopant <0.2 atom %). Metal‐doping triggers a red‐shift of the SiNC photoluminescence (PL) of up to 270 nm, while maintaining high PL quantum yield (26 % for Co doping). PMID:28374522

Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

NASA Technical Reports Server (NTRS)

Robertson, J. B.; Littlejohn, M. A.

1974-01-01

The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

NASA Astrophysics Data System (ADS)

Bayram, C.; Pau, J. L.; McClintock, R.; Razeghi, M.

2008-06-01

High quality δ-doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ-doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ-doped p-GaN also achieve a maximum multiplication gain of 5.1×104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ-doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ-doping.

Radiation-hardened nano-particles-based Erbium-doped fiber for space environment

NASA Astrophysics Data System (ADS)

Thomas, Jérémie; Myara, Mikhaël.; Signoret, Philippe; Burov, Ekaterina; Pastouret, Alain; Melin, Gilles; Boivin, David; Gilard, Olivier; Sotom, Michel

2017-11-01

We demonstrate for the first time a radiationresistant Erbium-Doped Fiber exhibiting performances that can fill the requirements of Erbium-Doped Fiber Amplifiers for space applications. This is based on an Aluminum co-doping atom reduction enabled by Nanoparticules Doping-Process. For this purpose, we developed several fibers containing very different erbium and aluminum concentrations, and tested them in the same optical amplifier configuration. This work allows to bring to the fore a highly radiation resistant Erbium-doped pure silica optical fiber exhibiting a low quenching level. This result is an important step as the EDFA is increasingly recognized as an enabling technology for the extensive use of photonic sub-systems in future satellites.

Effects of Eu doping and O vacancy on the magnetic and optical properties of ZnO

NASA Astrophysics Data System (ADS)

Ling-Feng, Qu; Qing-Yu, Hou; Xiao-Fang, Jia; Zhen-Chao, Xu; Chun-Wang, Zhao

2018-02-01

We calculated the electronic structure and optical properties of Eu mono-doped ZnO systems with or without O vacancy. We also determined the relative energy of ferromagnetic and antiferromagnetic orders of Eu-double-doped ZnO systems. The double-doped systems possess high Curie temperature and achieve room temperature ferromagnetism. The magnetism in the Eu mono-doped system without O vacancy is caused by the -Eu3+-O2--Eu3+- bound magnetopolaron (BMP) model. The magnetism of Eu mono-doped ZnO systems with O vacancy is more stable than that without O vacancy, and such magnetism is attributed to the -Eu3+-VO++-Eu3+- BMP model. The absorption spectrum for mono-doped systems is red shifted, and this finding confirms that Eu-mono-doped ZnO is a candidate photocatalyst for various applications. Therefore, Eu-double-doped ZnO can be practically used as an unambiguous diluted magnetic semiconductor.

Sonochemical synthesis and photocatalytic property of zinc oxide nanoparticles doped with magnesium(II)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xianyong, E-mail: xylu@buaa.edu.cn; Liu, Zhaoyue; Zhu, Ying

2011-10-15

Highlights: {yields} Mg-doped ZnO nanoparticles were synthesized by sonochemical strategy. {yields} Mg-doped ZnO nanoparticles present good photocatalytic properties. {yields} The change of band gap contributes to their high efficiency in photocatalyst. -- Abstract: Mg-doped ZnO nanoparticles were successfully synthesized by sonochemical method. The products were characterized by scan electron microscopy (SEM) and X-ray powder diffraction (XRD). SEM images revealed that ZnO doped with Mg(II) nanoparticles and ZnO nanoparticles synthesized by the same strategy all had spherical topography. XRD patterns showed that the doped nanoparticles had the same crystals structures as the pure ZnO nanoparticles. The Mg-doped ZnO nanoparticles had largermore » lattice volume than the un-doped nanoparticles. X-ray photoelectron spectroscopy (XPS) not only demonstrated the moral ratio of Mg and Zn element on the surface of nanoparticles, but their valence in nanoparticles as well. The Mg-doped ZnO nanoparticles presented good properties in photocatalyst compared with pure ZnO nanoparticles.« less

Preparation of Ru-doped SnO2-supported Pt catalysts and their electrocatalytic properties for methanol oxidation.

PubMed

Pang, H L; Zhang, X H; Zhong, X X; Liu, B; Wei, X G; Kuang, Y F; Chen, J H

2008-03-01

Ru-doped SnO2 nanoparticles were prepared by chemical precipitation and calcinations at 823 K. Due to high stability in diluted acidic solution, Ru-doped SnO2 nanoparticles were selected as the catalyst support and second catalyst for methanol electrooxidation. The micrograph, elemental composition, and structure of the Ru-doped SnO2 nanoparticles were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction, respectively. The electrocatalytic properties of the Ru-doped SnO2-supported Pt catalyst (Pt/Ru-doped SnO2) for methanol oxidation have been investigated by cyclic voltammetry. Under the same loading mass of Pt, the Pt/Ru-doped SnO2 catalyst shows better electrocatalytic performance than the Pt/SnO2 catalyst and the best atomic ratio of Ru to Sn in Ru-doped SnO2 is 1/75. Additionally, the Pt/Ru-doped SnO2 catalyst possesses good long-term cycle stability.

Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped C60 and ZnPc

NASA Astrophysics Data System (ADS)

Gaul, Christopher; Hutsch, Sebastian; Schwarze, Martin; Schellhammer, Karl Sebastian; Bussolotti, Fabio; Kera, Satoshi; Cuniberti, Gianaurelio; Leo, Karl; Ortmann, Frank

2018-05-01

Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C60 and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ1 between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ1 may provide alternative strategies to optimize the electronic properties of organic semiconductors.

Study of the endogenous steroid profile of male athletes from the Brazilian National Soccer Championship 2009.

PubMed

Nicolich, Rebecca S; Padilha, Monica C; de Aquino Neto, Francisco R

2010-01-01

Changes in the endogenous profile of androgenic anabolic steroids (AAS) may be interpreted as markers of doping. The objective of this study was to evaluate the endogenous profile of AAS in male athletes of the 2009 Brazilian National Soccer Championship, in normal conditions, particularly in the light of the revision of World Anti-Doping Agency's (WADA) Technical Document on the Interpretation of Endogenous AAS in athletes for doping control drafted in that year, as well as comparing these results to profiles already published in the literature. The upper limit of the 95% central reference interval of the following parameters for the studied population were estimated to be significantly higher than WADA's criteria, with a confidence of 90%: DHEA (about 2.3 times higher), Adiol (1.2 times higher), Bdiol (2.7 times higher), and Adiol/E (6 times higher). These findings seem to imply that WADA's criteria proposed in 2009 for DHEA, Adiol, Bdiol, and Adiol/E may not have been applicable to the studied population. Moreover, their comparison to previously published studies pointed to the need to evaluate in detail the appropriateness of adopting these criteria as universal, since there seems to be variations among different populations of athletes. Copyright © 2010 John Wiley & Sons, Ltd.

Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst

NASA Astrophysics Data System (ADS)

Shakhov, Fedor M.; Abyzov, Andrey M.; Kidalov, Sergey V.; Krasilin, Andrei A.; Lähderanta, Erkki; Lebedev, Vasiliy T.; Shamshur, Dmitriy V.; Takai, Kazuyuki

2017-04-01

The boron-doped diamond (BDD) powder consisting of 40-100 μm particles was synthesized at 5 GPa and 1500-1600 °C from a mixture of 50 wt% graphite and 50 wt% Ni-Mn catalyst with an addition of 1 wt% or 5 wt% boron powder. The size of crystal domains of doped and non-doped diamond was evaluated as a coherent scattering region by X-ray diffraction (XRD) and using small-angle neutron scattering (SANS), being ≥180 nm (XRD) and 100 nm (SANS). Magnetic impurities of NiMnx originating from the catalyst in the synthesis, which prevent superconductivity, were detected by magnetization measurements at 2-300 K. X-ray photoelectron spectroscopy, the temperature dependence of the resistivity, XRD, and Raman spectroscopy reveal that the concentration of electrically active boron is as high as (2±1)×1020 cm-3 (0.1 at%). To the best of our knowledge, this is the highest boron content for BDD synthesized in high-pressure high-temperature process with metal catalysts.

Neutron transmutation doped Ge bolometers

NASA Technical Reports Server (NTRS)

Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

1983-01-01

Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

Energy Level Alignment of N-Doping Fullerenes and Fullerene Derivatives Using Air-Stable Dopant.

PubMed

Bao, Qinye; Liu, Xianjie; Braun, Slawomir; Li, Yanqing; Tang, Jianxin; Duan, Chungang; Fahlman, Mats

2017-10-11

Doping has been proved to be one of the powerful technologies to achieve significant improvement in the performance of organic electronic devices. Herein, we systematically map out the interface properties of solution-processed air-stable n-type (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) doping fullerenes and fullerene derivatives and establish a universal energy level alignment scheme for this class of n-doped system. At low doping levels at which the charge-transfer doping induces mainly bound charges, the energy level alignment of the n-doping organic semiconductor can be described by combining integer charger transfer-induced shifts with a so-called double-dipole step. At high doping levels, significant densities of free charges are generated and the charge flows between the organic film and the conducting electrodes equilibrating the Fermi level in a classic "depletion layer" scheme. Moreover, we demonstrate that the model holds for both n- and p-doping of π-backbone molecules and polymers. With the results, we provide wide guidance for identifying the application of the current organic n-type doping technology in organic electronics.

Doping process of p-type GaN nanowires: A first principle study

NASA Astrophysics Data System (ADS)

Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

2017-10-01

The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

Fuel cells with doped lanthanum gallate electrolyte

NASA Astrophysics Data System (ADS)

Feng, Man; Goodenough, John B.; Huang, Keqin; Milliken, Christopher

Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800°C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800°C was achieved. our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum galiate and achieve higher power density at 800°C from solid oxide fuel cells.

Effects of rare-earth co-doping on the local structure of rare-earth phosphate glasses using high and low energy X-ray diffraction.

PubMed

Cramer, Alisha J; Cole, Jacqueline M; FitzGerald, Vicky; Honkimaki, Veijo; Roberts, Mark A; Brennan, Tessa; Martin, Richard A; Saunders, George A; Newport, Robert J

2013-06-14

Rare-earth co-doping in inorganic materials has a long-held tradition of facilitating highly desirable optoelectronic properties for their application to the laser industry. This study concentrates specifically on rare-earth phosphate glasses, (R2O3)x(R'2O3)y(P2O5)(1-(x+y)), where (R, R') denotes (Ce, Er) or (La, Nd) co-doping and the total rare-earth composition corresponds to a range between metaphosphate, RP3O9, and ultraphosphate, RP5O14. Thereupon, the effects of rare-earth co-doping on the local structure are assessed at the atomic level. Pair-distribution function analysis of high-energy X-ray diffraction data (Q(max) = 28 Å(-1)) is employed to make this assessment. Results reveal a stark structural invariance to rare-earth co-doping which bears testament to the open-framework and rigid nature of these glasses. A range of desirable attributes of these glasses unfold from this finding; in particular, a structural simplicity that will enable facile molecular engineering of rare-earth phosphate glasses with 'dial-up' lasing properties. When considered together with other factors, this finding also demonstrates additional prospects for these co-doped rare-earth phosphate glasses in nuclear waste storage applications. This study also reveals, for the first time, the ability to distinguish between P-O and P[double bond, length as m-dash]O bonding in these rare-earth phosphate glasses from X-ray diffraction data in a fully quantitative manner. Complementary analysis of high-energy X-ray diffraction data on single rare-earth phosphate glasses of similar rare-earth composition to the co-doped materials is also presented in this context. In a technical sense, all high-energy X-ray diffraction data on these glasses are compared with analogous low-energy diffraction data; their salient differences reveal distinct advantages of high-energy X-ray diffraction data for the study of amorphous materials.

Preparation of ordered mesoporous alumina-doped titania films with high thermal stability and their application to high-speed passive-matrix electrochromic displays.

PubMed

Jiang, Xiangfen; Bastakoti, Bishnu Prasad; Weng, Wu; Higuchi, Tetsuya; Oveisi, Hamid; Suzuki, Norihiro; Chen, Wei-Jung; Huang, Yu-Tzu; Yamauchi, Yusuke

2013-08-12

Ordered mesoporous alumina-doped titania thin films with anatase crystalline structure were prepared by using triblock copolymer Pluronic P123 as structure-directing agent. Uniform Al doping was realized by using aluminum isopropoxide as a dopant source which can be hydrolyzed together with titanium tetraisopropoxide. Aluminum doping into the titania framework can prevent rapid crystallization to the anatase phase, thereby drastically increasing thermal stability. With increasing Al content, the crystallization temperatures tend to increase gradually. Even when the Al content doped into the framework was increased to 15 mol %, a well-ordered mesoporous structure was obtained, and the mesostructural ordering was still maintained after calcination at 550 °C. During the calcination process, large uniaxial shrinkage occurred along the direction perpendicular to the substrate with retention of the horizontal mesoscale periodicity, whereby vertically oriented nanopillars were formed in the film. The resulting vertical porosity was successfully exploited to fabricate a high-speed and high-quality passive-matrix electrochromic display by using a leuco dye. The vertical nanospace in the films can effectively prevent drifting of the leuco dye. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

NASA Astrophysics Data System (ADS)

Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Zhu, Min; Peng, Cheng; Yao, Dongning; Song, Sannian; Liu, Bo; Feng, Songlin

2012-10-01

Carbon-doped Ge2Sb2Te5 material is proposed for high-density phase-change memories. The carbon doping effects on electrical and structural properties of Ge2Sb2Te5 are studied by in situ resistance and x-ray diffraction measurements as well as optical spectroscopy. C atoms are found to significantly enhance the thermal stability of amorphous Ge2Sb2Te5 by increasing the degree of disorder of the amorphous phase. The reversible electrical switching capability of the phase-change memory cells is improved in terms of power consumption with carbon addition. The endurance of ˜2.1 × 104 cycles suggests that C-doped Ge2Sb2Te5 film will be a potential phase-change material for high-density storage application.

Effects of Concentration of Nanoscale Tin-Doped Indium Oxide on Electrical Breakdown of High-Resistance Liquid Crystal

NASA Astrophysics Data System (ADS)

Liang, Bau-Jy; Liu, Don-Gey; Chang, Chih-Yuan; Shie, Wun-Yi

2011-05-01

According to our previous study, a high concentration of nanoscale tin-doped indium oxide (ITO) may be beneficial for protecting liquid crystal (LC) against attacks by electrostatic discharge (ESD). In this study, the influence of high-voltage stresses in an ESD test was investigated for cells doped with different concentrations of ITO. It was found that nano-ITO with a concentration of 0.4% in weight ratio deteriorated the physical properties of LC of transparency transition and charge retention. However, our experiment showed that the capability of ESD protection for the doped LC was still improved at the ITO concentration of 0.4 wt %. This finding supports the proposed model in our previous report. The role of ITO in the LC is not always beneficial, as discussed in this paper.

The effect of strontium and barium doping on perovskite-structured energy materials for photovoltaic applications

NASA Astrophysics Data System (ADS)

Wu, Ming-Chung; Chen, Wei-Cheng; Chan, Shun-Hsiang; Su, Wei-Fang

2018-01-01

Perovskite solar cell is a novel photovoltaic technology with the superior progress in efficiency and the simple solution processes. Develop lead-free or lead-reduced perovskite materials is a significant concern for high-performance perovskite solar cell. Among the alkaline earth metals, the Sr2+ and Ba2+ are suitable for Pb2+ replacement in perovskite film due to fitting Goldschmidt's tolerance factor. In this study, we adopted Ba-doped and Sr-doped perovskite structured materials with different doping levels, including 1.0, 5.0, and 10.0 mol%, to prepare perovskite solar cells. Both Ba-doped and Sr-doped perovskite structured materials have a related tendency in absorption behavior and surface morphology. At 10.0 mol% doping level, the power conversion efficiency (PCE) of Sr-doped perovskite solar cells is only ∼0.5%, but the PCE of Ba-doped perovskite solar cells can be achieved to ∼9.7%. Ba-doped perovskite solar cells showed the acceptable photovoltaic characteristics than Sr-doped perovskite solar cells. Ba dopant can partially replace the amount of lead in the perovskite solar cells, and it could be a potential candidate in the field of lead-free or lead-reduced perovskite energy materials.

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

NASA Astrophysics Data System (ADS)

Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

2017-12-01

We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

Synthesis of ultrathin nitrogen-doped graphitic carbon nanocages as advanced electrode materials for supercapacitor.

PubMed

Tan, Yueming; Xu, Chaofa; Chen, Guangxu; Liu, Zhaohui; Ma, Ming; Xie, Qingji; Zheng, Nanfeng; Yao, Shouzhuo

2013-03-01

Synthesis of nitrogen-doped carbons with large surface area, high conductivity, and suitable pore size distribution is highly desirable for high-performance supercapacitor applications. Here, we report a novel protocol for template synthesis of ultrathin nitrogen-doped graphitic carbon nanocages (CNCs) derived from polyaniline (PANI) and their excellent capacitive properties. The synthesis of CNCs involves one-pot hydrothermal synthesis of Mn3O4@PANI core-shell nanoparticles, carbonization to produce carbon coated MnO nanoparticles, and then removal of the MnO cores by acidic treatment. The CNCs prepared at an optimum carbonization temperature of 800 °C (CNCs-800) have regular frameworks, moderate graphitization, high specific surface area, good mesoporosity, and appropriate N doping. The CNCs-800 show high specific capacitance (248 F g(-1) at 1.0 A g(-1)), excellent rate capability (88% and 76% capacitance retention at 10 and 100 A g(-1), respectively), and outstanding cycling stability (~95% capacitance retention after 5000 cycles) in 6 M KOH aqueous solution. The CNCs-800 can also exhibit great pseudocapacitance in 0.5 M H2SO4 aqueous solution besides the large electrochemical double-layer capacitance. The excellent capacitance performance coupled with the facile synthesis of ultrathin nitrogen-doped graphitic CNCs indicates their great application potential in supercapacitors.

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

NASA Technical Reports Server (NTRS)

Vining, Cronin B.

1991-01-01

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Ho-nanoparticle-doping for improved high-energy laser fibers

NASA Astrophysics Data System (ADS)

Friebele, E. Joseph; Baker, Colin C.; Burdett, Ashley A.; Rhonehouse, Daniel L.; Bowman, Steven R.; Kim, Woohong; Sanghera, Jasbinder S.; Kucera, Courtney; Vargas, Amber; Ballato, John; Hemming, Alexander; Simakov, Nikita; Haub, John

2017-02-01

A significant issue for holmium-doped fiber lasers (HoDFLs) operating near 2 μm is multiphonon quenching due to the high phonon energy 1100 cm-1 of the silica host, which complicates power scaling due to reduced lifetimes and increased heating. Nanoparticle (NP) doping is a new technique where the structure surrounding the Ho ions is developed chemically prior to doping into the silica core. We have incorporated Ho3+ ions into various NPs, such as LaF3, Al2O3 and Lu2O3, to shield them from the silica glass matrix. Results indicate slightly longer lifetimes with Ho:LaF3 NPs and the possibility of further improvement with oxide NPs. We report the first of lasing in a Ho:Lu2O3 NP-doped fiber pumped at 1.95 μm and operating at 2.09 μm with a record slope efficiency of 85.2%.

Nanoionic devices: Interface nanoarchitechtonics for physical property tuning and enhancement

NASA Astrophysics Data System (ADS)

Tsuchiya, Takashi; Terabe, Kazuya; Yang, Rui; Aono, Masakazu

2016-11-01

Nanoionic devices have been developed to generate novel functions overcoming limitations of conventional materials synthesis and semiconductor technology. Various physical properties can be tuned and enhanced by local ion transport near the solid/solid interface. Two electronic carrier doping methods can be used to achieve extremely high-density electronic carriers: one is electrostatic carrier doping using an electric double layer (EDL); the other is electrochemical carrier doping using a redox reaction. Atomistic restructuring near the solid/solid interface driven by a DC voltage, namely, interface nanoarchitechtonics, has huge potential. For instance, the use of EDL enables high-density carrier doping in potential superconductors, which can hardly accept chemical doping, in order to achieve room-temperature superconductivity. Optical bandgap and photoluminescence can be controlled for various applications including smart windows and biosensors. In situ tuning of magnetic properties is promising for low-power-consumption spintronics. Synaptic plasticity in the human brain is achieved in neuromorphic devices.

Highly resistive epitaxial Mg-doped GdN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, C.-M.; Warring, H.; Trodahl, H. J.

2015-01-12

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 10{sup 3} Ω cm and carrier concentrations of 10{sup 16 }cm{sup −3} are obtained for films with Mg concentrations up to 5 × 10{sup 19} atoms/cm{sup 3}. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F.more » Natali, B. J. Ruck, H. J. Trodahl, D. L. Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond, and C. Meyer, Phys. Rev. B 87, 035202 (2013)].« less

Quasiparticle mass enhancement approaching optimal doping in a high-T c superconductor

DOE PAGES

Ramshaw, B. J.; Sebastian, S. E.; McDonald, R. D.; ...

2015-03-26

In the quest for superconductors with higher transition temperatures (T c), one emerging motif is that electronic interactions favorable for superconductivity can be enhanced by fluctuations of a broken-symmetry phase. In recent experiments it is suggested that the existence of the requisite broken-symmetry phase in the high-T c cuprates, but the impact of such a phase on the ground-state electronic interactions has remained unclear. Here, we used magnetic fields exceeding 90 tesla to access the underlying metallic state of the cuprate YBa 2Cu 3O 6+δ over a wide range of doping, and observed magnetic quantum oscillations that reveal a strongmore » enhancement of the quasiparticle effective mass toward optimal doping. Finally, this mass enhancement results from increasing electronic interactions approaching optimal doping, and suggests a quantum critical point at a hole doping of p crit ≈ 0.18.« less

Quasiparticle mass enhancement approaching optimal doping in a high-T c superconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramshaw, B. J.; Sebastian, S. E.; McDonald, R. D.

In the quest for superconductors with higher transition temperatures (T c), one emerging motif is that electronic interactions favorable for superconductivity can be enhanced by fluctuations of a broken-symmetry phase. In recent experiments it is suggested that the existence of the requisite broken-symmetry phase in the high-T c cuprates, but the impact of such a phase on the ground-state electronic interactions has remained unclear. Here, we used magnetic fields exceeding 90 tesla to access the underlying metallic state of the cuprate YBa 2Cu 3O 6+δ over a wide range of doping, and observed magnetic quantum oscillations that reveal a strongmore » enhancement of the quasiparticle effective mass toward optimal doping. Finally, this mass enhancement results from increasing electronic interactions approaching optimal doping, and suggests a quantum critical point at a hole doping of p crit ≈ 0.18.« less

Superconductivity. Quasiparticle mass enhancement approaching optimal doping in a high-T(c) superconductor.

PubMed

Ramshaw, B J; Sebastian, S E; McDonald, R D; Day, James; Tan, B S; Zhu, Z; Betts, J B; Liang, Ruixing; Bonn, D A; Hardy, W N; Harrison, N

2015-04-17

In the quest for superconductors with higher transition temperatures (T(c)), one emerging motif is that electronic interactions favorable for superconductivity can be enhanced by fluctuations of a broken-symmetry phase. Recent experiments have suggested the existence of the requisite broken-symmetry phase in the high-T(c) cuprates, but the impact of such a phase on the ground-state electronic interactions has remained unclear. We used magnetic fields exceeding 90 tesla to access the underlying metallic state of the cuprate YBa2Cu3O(6+δ) over a wide range of doping, and observed magnetic quantum oscillations that reveal a strong enhancement of the quasiparticle effective mass toward optimal doping. This mass enhancement results from increasing electronic interactions approaching optimal doping, and suggests a quantum critical point at a hole doping of p(crit) ≈ 0.18. Copyright © 2015, American Association for the Advancement of Science.

Sports Nutrition and Doping Factors in Synchronized Swimming: Parallel Analysis among Athletes and Coaches.

PubMed

Furjan Mandic, Gordana; Peric, Mia; Krzelj, Lucijana; Stankovic, Sladana; Zenic, Natasa

2013-01-01

Although nutrition and doping are important factors in sports, neither is often investigated in synchronized swimming (Synchro).This study aimed to define and compare Synchro athletes and their coaches on their knowledge of sports nutrition (KSN)and knowledge of doping (KD); and to study factors related to KSN and KD in each of these groups. Additionally, the KSNand KD questionnaires were evaluated for their reliability and validity. Altogether, 82 athletes (17.2 ± 1.92 years of age) and 28 coaches (30.8 ± 5.26 years of age) from Croatia and Serbia were included in the study, with a 99% response rate. The testand retest correlations were 0.94 and 0.90 for the KD and KSN,respectively. Subjects responded equally to 91% queries of the KD and 89% queries of the KSN. Although most of the coache sare highly educated, they declared self-education as the primary source of information about doping and sport-nutrition. Coaches scored higher than their athletes on both questionnaires which defined appropriate discriminative validity of the questionnaires. Variables such as age, sports experience and formal education are positively correlated to KSN and KD scores among athletes. The athletes who scored better on the KD are less prone to doping behavior in the future. These data reinforce the need for systematic educational programs on doping and sports nutrition in synchronized swimming. Special attention should be placed on younger athletes. Key PointsAlthough most of the synchro coaches are highly educated, self-education is declared as the primary source of information about doping and sportnutrition.The knowledge of doping and doping-health hazards are negatively related to potential doping behavior in the future among synchronized swimmersThe data reinforce the need for systematic educational programs on doping and sports nutrition in synchronized swimming.We advocate improving the knowledge of sports nutrition among older coaches and the knowledge of doping among younger coaches, while among athletes,younger swimmers should be targeted.

Sports Nutrition and Doping Factors in Synchronized Swimming: Parallel Analysis among Athletes and Coaches

PubMed Central

Furjan Mandic, Gordana; Peric, Mia; Krzelj, Lucijana; Stankovic, Sladana; Zenic, Natasa

2013-01-01

Although nutrition and doping are important factors in sports, neither is often investigated in synchronized swimming (Synchro).This study aimed to define and compare Synchro athletes and their coaches on their knowledge of sports nutrition (KSN)and knowledge of doping (KD); and to study factors related to KSN and KD in each of these groups. Additionally, the KSNand KD questionnaires were evaluated for their reliability and validity. Altogether, 82 athletes (17.2 ± 1.92 years of age) and 28 coaches (30.8 ± 5.26 years of age) from Croatia and Serbia were included in the study, with a 99% response rate. The testand retest correlations were 0.94 and 0.90 for the KD and KSN,respectively. Subjects responded equally to 91% queries of the KD and 89% queries of the KSN. Although most of the coache sare highly educated, they declared self-education as the primary source of information about doping and sport-nutrition. Coaches scored higher than their athletes on both questionnaires which defined appropriate discriminative validity of the questionnaires. Variables such as age, sports experience and formal education are positively correlated to KSN and KD scores among athletes. The athletes who scored better on the KD are less prone to doping behavior in the future. These data reinforce the need for systematic educational programs on doping and sports nutrition in synchronized swimming. Special attention should be placed on younger athletes. Key Points Although most of the synchro coaches are highly educated, self-education is declared as the primary source of information about doping and sportnutrition. The knowledge of doping and doping-health hazards are negatively related to potential doping behavior in the future among synchronized swimmers The data reinforce the need for systematic educational programs on doping and sports nutrition in synchronized swimming. We advocate improving the knowledge of sports nutrition among older coaches and the knowledge of doping among younger coaches, while among athletes,younger swimmers should be targeted PMID:24421736

Induction annealing and subsequent quenching: effect on the thermoelectric properties of boron-doped nanographite ensembles.

PubMed

Xie, Ming; Lee, Chee Huei; Wang, Jiesheng; Yap, Yoke Khin; Bruno, Paola; Gruen, Dieter; Singh, Dileep; Routbort, Jules

2010-04-01

Boron-doped nanographite ensembles (NGEs) are interesting thermoelectric nanomaterials for high temperature applications. Rapid induction annealing and quenching has been applied to boron-doped NGEs using a relatively low-cost, highly reliable, laboratory built furnace to show that substantial improvements in thermoelectric power factors can be achieved using this methodology. Details of the design and performance of this compact induction furnace as well as results of the thermoelectric measurements will be reported here.

Highly Sensitive and Selective Ethanol Sensor Fabricated with In-Doped 3DOM ZnO.

PubMed

Wang, Zhihua; Tian, Ziwei; Han, Dongmei; Gu, Fubo

2016-03-02

ZnO is an important n-type semiconductor sensing material. Currently, much attention has been attracted to finding an effective method to prepare ZnO nanomaterials with high sensing sensitivity and excellent selectivity. A three-dimensionally ordered macroporous (3DOM) ZnO nanostructure with a large surface area is beneficial to gas and electron transfer, which can enhance the gas sensitivity of ZnO. Indium (In) doping is an effective way to improve the sensing properties of ZnO. In this paper, In-doped 3DOM ZnO with enhanced sensitivity and selectivity has been synthesized by using a colloidal crystal templating method. The 3DOM ZnO with 5 at. % of In-doping exhibits the highest sensitivity (∼88) to 100 ppm ethanol at 250 °C, which is approximately 3 times higher than that of pure 3DOM ZnO. The huge improvement to the sensitivity to ethanol was attributed to the increase in the surface area and the electron carrier concentration. The doping by In introduces more electrons into the matrix, which is helpful for increasing the amount of adsorbed oxygen, leading to high sensitivity. The In-doped 3DOM ZnO is a promising material for a new type of ethanol sensor.

Metal-electrode-free Window-like Organic Solar Cells with p-Doped Carbon Nanotube Thin-film Electrodes

PubMed Central

Jeon, Il; Delacou, Clement; Kaskela, Antti; Kauppinen, Esko I.; Maruyama, Shigeo; Matsuo, Yutaka

2016-01-01

Organic solar cells are flexible and inexpensive, and expected to have a wide range of applications. Many transparent organic solar cells have been reported and their success hinges on full transparency and high power conversion efficiency. Recently, carbon nanotubes and graphene, which meet these criteria, have been used in transparent conductive electrodes. However, their use in top electrodes has been limited by mechanical difficulties in fabrication and doping. Here, expensive metal top electrodes were replaced with high-performance, easy-to-transfer, aerosol-synthesized carbon nanotubes to produce transparent organic solar cells. The carbon nanotubes were p-doped by two new methods: HNO3 doping via ‘sandwich transfer’, and MoOx thermal doping via ‘bridge transfer’. Although both of the doping methods improved the performance of the carbon nanotubes and the photovoltaic performance of devices, sandwich transfer, which gave a 4.1% power conversion efficiency, was slightly more effective than bridge transfer, which produced a power conversion efficiency of 3.4%. Applying a thinner carbon nanotube film with 90% transparency decreased the efficiency to 3.7%, which was still high. Overall, the transparent solar cells had an efficiency of around 50% that of non-transparent metal-based solar cells (7.8%). PMID:27527565

Theoretical analysis of nBn infrared photodetectors

NASA Astrophysics Data System (ADS)

Ting, David Z.; Soibel, Alexander; Khoshakhlagh, Arezou; Gunapala, Sarath D.

2017-09-01

The depletion and surface leakage dark current suppression properties of unipolar barrier device architectures such as the nBn have been highly beneficial for III-V semiconductor-based infrared detectors. Using a one-dimensional drift-diffusion model, we theoretically examine the effects of contact doping, minority carrier lifetime, and absorber doping on the dark current characteristics of nBn detectors to explore some basic aspects of their operation. We found that in a properly designed nBn detector with highly doped excluding contacts the minority carriers are extracted to nonequilibrium levels under reverse bias in the same manner as the high operating temperature (HOT) detector structure. Longer absorber Shockley-Read-Hall (SRH) lifetimes result in lower diffusion and depletion dark currents. Higher absorber doping can also lead to lower diffusion and depletion dark currents, but the benefit should be weighted against the possibility of reduced diffusion length due to shortened SRH lifetime. We also briefly examined nBn structures with unintended minority carrier blocking barriers due to excessive n-doping in the unipolar electron barrier, or due to a positive valence band offset between the barrier and the absorber. Both types of hole blocking structures lead to higher turn-on bias, although barrier n-doping could help suppress depletion dark current.

Low- and high-index sol-gel films for planar and channel-doped waveguides

NASA Astrophysics Data System (ADS)

Canva, Michael; Chaput, Frederic; Lahlil, Khalid; Rachet, Vincent; Goudket, Helene; Boilot, Jean-Pierre; Levy, Yves

2001-11-01

In view of realizing integrated optic components based on effects such as electro-optic, chi(2):chi(2) cascading, stimulated emission,... one has to first synthesize materials with the proper functionality; this may be achieved by doping solid state matrices by the appropriate organic chromophores. Second, and as important, these materials have to be properly structured into the final optical guiding structures. We shall report on issues related to the realization of chromophore-doped planar waveguides as well as channel waveguides. These structures were realized by either photo-transformation such as photo- chromism and photo-bleaching or reactive ion etching technique, starting with chromophore doped sol-gel materials at high loading contents for which optical index may be controlled via the local dopant concentration. With these materials and techniques, waveguides and components characterized by propagation losses of the order of a cm-1, measured off the edge of the absorption band of the doping species, were fabricated. In order to be also able to study and use waveguide functionalized with low concentration of chromophore species, we developed new sol-gel materials of high optical index, yet low temperature processed. These new films are under study to evaluate their potential as host for organic doped waveguides devices.

Record power, ultra-broadband supercontinuum source based on highly GeO₂ doped silica fiber.

PubMed

Jain, D; Sidharthan, R; Moselund, P M; Yoo, S; Ho, D; Bang, O

2016-11-14

We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped fiber based master oscillator power amplifier. The effect of repetition frequency of pump source and length of germania-doped fiber has also been investigated. Further, germania doped fiber has been pumped by conventional supercontinuum source based on silica photonic crystal fiber supercontinuum source. At low power, a considerable broadening of 200-300 nm was observed. Further broadening of spectrum was limited due to limited power of pump source. Our investigations reveal the unexploited potential of germania doped fiber for mid-infrared supercontinuum generation. These measurements ensure the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source based on silica and germania fiber ever demonstrated to the date.

High density and taper-free boron doped Si{sub 1−x}Ge{sub x} nanowire via two-step growth process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Periwal, Priyanka; Salem, Bassem; Bassani, Franck

2014-07-01

The authors study Au catalyzed chemical vapor growth of Si{sub 1−x}Ge{sub x} alloyed nanowires in the presence of diborane, serving as a dopant precursor. Our experiments reveal that introduction of diborane has a significant effect on doping and morphology. Boron exposure poisons the Au catalyst surface, suppresses catalyst activity, and causes significantly tapered wires, as a result of conformal growth. The authors develop here a two-step method to obtain high density and taper-free boron doped Si{sub 1−x}Ge{sub x} alloy nanowires. The two-step process consists of: (1) growth of a small undoped Si{sub 1−x}Ge{sub x} section and (2) introduction of diboranemore » to form a boron doped Si{sub 1−x}Ge{sub x} section. The catalyst preparation step remarkably influences wire yield, quality and morphology. The authors show that dopant-ratio influences wire resistivity and morphology. Resistivity for high boron doped Si{sub 1−x}Ge{sub x} nanowire is 6 mΩ-cm. Four probe measurements show that it is possible to dope Si{sub 1−x}Ge{sub x} alloy nanowires with diborane.« less

Metal-electrode-free Window-like Organic Solar Cells with p-Doped Carbon Nanotube Thin-film Electrodes.

PubMed

Jeon, Il; Delacou, Clement; Kaskela, Antti; Kauppinen, Esko I; Maruyama, Shigeo; Matsuo, Yutaka

2016-08-16

Organic solar cells are flexible and inexpensive, and expected to have a wide range of applications. Many transparent organic solar cells have been reported and their success hinges on full transparency and high power conversion efficiency. Recently, carbon nanotubes and graphene, which meet these criteria, have been used in transparent conductive electrodes. However, their use in top electrodes has been limited by mechanical difficulties in fabrication and doping. Here, expensive metal top electrodes were replaced with high-performance, easy-to-transfer, aerosol-synthesized carbon nanotubes to produce transparent organic solar cells. The carbon nanotubes were p-doped by two new methods: HNO3 doping via 'sandwich transfer', and MoOx thermal doping via 'bridge transfer'. Although both of the doping methods improved the performance of the carbon nanotubes and the photovoltaic performance of devices, sandwich transfer, which gave a 4.1% power conversion efficiency, was slightly more effective than bridge transfer, which produced a power conversion efficiency of 3.4%. Applying a thinner carbon nanotube film with 90% transparency decreased the efficiency to 3.7%, which was still high. Overall, the transparent solar cells had an efficiency of around 50% that of non-transparent metal-based solar cells (7.8%).

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Chen, Jiangshan; Li, Xinglin; Ma, Dongge

2010-05-01

Conduction mechanism in molybdenum trioxide (MoOx)-doped hole- and electron-type organic semiconductors is investigated. The used hole-transporting materials are N ,N'-diphenyl-N ,N'-bis(1-naphthylphenyl)-1, 1'-biphen4, 4'-diamine, 4',4″-tri(N-carbazolyl)triphenylamine, 4, 4'-N,N-dicarbazole-biphenyl, and pentacene and the used electron-transporting material is (8-quinolinolato) aluminum (Alq3). It can be seen that the hole conductivity is significantly enhanced upon MoOx doping, and more importantly, dominant hole current could be realized in a typical electron-transport material Alq3 by doping MoOx. Hence, high efficiency organic light-emitting devices can also be achieved even using MoOx-doped Alq3 film as hole transporting layer. The mechanism investigation indicates that the MoOx plays an important role in the hole transport. It is showed that the MoOx serves as the hole hopping sites, whereas the used organic materials serve as the transport medium and determine the magnitude of transport current. Furthermore, it is found that doping MoOx into the organic materials also reduces the energy and position disorders of the doped organic films, which are well demonstrated by the study on transport characteristics of the doped films at various temperatures.

Solution processible MoOx-incorporated graphene anode for efficient polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Dongchan; Kim, Donghyuk; Lee, Yonghee; Jeon, Duk Young

2017-06-01

Graphene has attracted great attention owing to its superb properties as an anode of organic or polymer light-emitting diodes (OLEDs or PLEDs). However, there are still barriers for graphene to replace existing indium tin oxide (ITO) due to relatively high sheet resistance and work function mismatch. In this study, PLEDs using molybdenum oxide (MoOx) nanoparticle-doped graphene are demonstrated on a plastic substrate to have a low sheet resistance and high work function. Also, this work shows how the doping amount influences the electronic properties of the graphene anode and the PLED performance. A facile and scalable spin coating process was used for doping graphene with MoOx. After doping, the sheet resistance and the optical transmittance of five-layer graphene were ˜180 Ω sq-1 and ˜88%, respectively. Moreover, the surface roughness of MoOx-doped graphene becomes smoother than that of pristine graphene. Furthermore, a nonlinear relationship was observed between the MoOx doping level and device performance. Therefore, a modified stacking structure of graphene electrode is presented to further enhance device performance. The maximum external quantum efficiency (EQE) and power efficiency of the PLED using the MoOx-doped graphene anode were 4.7% and 13.3 lm W-1, respectively. The MoOx-doped graphene anode showed enhanced device performance (261% for maximum EQE, 255% for maximum power efficiency) compared with the pristine graphene.

Study of nitrogen ion doping of titanium dioxide films

NASA Astrophysics Data System (ADS)

Ramos, Raul; Scoca, Diego; Borges Merlo, Rafael; Chagas Marques, Francisco; Alvarez, Fernando; Zagonel, Luiz Fernando

2018-06-01

This study reports on the properties of nitrogen doped titanium dioxide (TiO2) thin films considering the application as a transparent conducting oxide (TCO). Sets of thin films were prepared by sputtering a titanium target under oxygen atmosphere on a quartz substrate at 400 or 500 °C. Films were then doped at the same temperature by 150 eV nitrogen ions. The films were prepared in Anatase phase which was maintained after doping. Up to 30 at% nitrogen concentration was obtained at the surface, as determined by in situ X-ray photoelectron spectroscopy (XPS). Such high nitrogen concentration at the surface lead to nitrogen diffusion into the bulk which reached about 25 nm. Hall measurements indicate that average carrier density reached over 1019 cm-3 with mobility in the range of 0.1-1 cm2 V-1 s-1. Resistivity about 3 · 10-1 Ω cm could be obtained with 85% light transmission at 550 nm. These results indicate that low energy implantation is an effective technique for TiO2 doping that allows an accurate control of the doping process independently from the TiO2 preparation. Moreover, this doping route seems promising to attain high doping levels without significantly affecting the film structure. Such approach could be relevant for preparation of N:TiO2 transparent conducting electrodes (TCE).

Remote p-type Doping in GaSb/InAs Core-shell Nanowires

PubMed Central

Ning, Feng; Tang, Li-Ming; Zhang, Yong; Chen, Ke-Qiu

2015-01-01

By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mobility of nanowire. For Zn doping in bare ZB [110] GaSb/InAs core-shell nanowire the hole states are compensated by surface states. We also studied the behaviors of remote p-type doing in two-dimensional (2D) GaSb/InAs heterogeneous slabs, and confirmed that the orientation of nanowire side facet is a key factor for achieving high efficient remote p-type doping. PMID:26028535

New Approach for High-Voltage Electrical Double-Layer Capacitors Using Vertical Graphene Nanowalls with and without Nitrogen Doping.

PubMed

Chi, Yu-Wen; Hu, Chi-Chang; Shen, Hsiao-Hsuan; Huang, Kun-Ping

2016-09-14

Integrating various devices to achieve high-performance energy storage systems to satisfy various demands in modern societies become more and more important. Electrical double-layer capacitors (EDLCs), one kind of the electrochemical capacitors, generally provide the merits of high charge-discharge rates, extremely long cycle life, and high efficiency in electricity capture/storage, leading to a desirable device of electricity management from portable electronics to hybrid vehicles or even smart grid application. However, the low cell voltage (2.5-2.7 V in organic liquid electrolytes) of EDLCs lacks the direct combination of Li-ion batteries (LIBs) and EDLCs for creating new functions in future applications without considering the issue of a relatively low energy density. Here we propose a guideline, "choosing a matching pair of electrode materials and electrolytes", to effectively extend the cell voltage of EDLCs according to three general strategies. Based on the new strategy proposed in this work, materials with an inert surface enable to tolerate a wider potential window in commercially available organic electrolytes in comparison with activated carbons (ACs). The binder-free, vertically grown graphene nanowalls (GNW) and nitrogen-doped GNW (NGNW) electrodes respectively provide good examples for extending the upper potential limit of a positive electrode of EDLCs from 0.1 to 1.5 V (vs Ag/AgNO3) as well as the lower potential limit of a negative electrode of EDLCs from -2.0 V to ca. -2.5 V in 1 M TEABF4/PC (propylene carbonate) compared to ACs. This newly designed asymmetric EDLC exhibits a cell voltage of 4 V, specific energy of 52 Wh kg(-1) (ca. a device energy density of 13 Wh kg(-1)), and specific power of 8 kW kg(-1) and ca. 100% retention after 10,000 cycles charge-discharge, reducing the series number of EDLCs to enlarge the module voltage and opening the possibility for directly combining EDLCs and LIBs in advanced applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhe, E-mail: zhenzhe1201@sina.com; Yang, Lei; Hang, Yin

Highly transparent Dy{sup 3+}-doped terbium gallium garnet (TGG) single crystal was grown by Czochralski (Cz) method. Phase composition of the crystal was tested by XRD measurements. The distribution coefficient of Dy{sup 3+} in the crystal was obtained. The optical and magneto-optical properties were analyzed in detail, and magnetic properties of the Dy{sup 3+}-TGG crystal were studied. The paramagnetic behavior is observed down to 10 K. The as-grown crystal exhibited high optical transmittance, particularly in the visible region. The Faraday rotation was investigated over visible and near-infrared regions (VIS–NIR) at room temperature. The Verdet constants increase at measured wavelengths and highmore » thermal stability was found in Dy{sup 3+}-doped TGG, as compared to the properties of pure TGG, indicating that Dy{sup 3+}-doped crystals are preferable for magneto-active materials used in Faraday devices at VIS–NIR wavelengths. - Graphical abstract: Highly transparent Dy{sup 3+}-doped terbium gallium garnet (TGG) and pure TGG single crystals were grown by Czochralski method. The Dy{sup 3+}-doped TGG possesses 20–30% higher Verdet values in reference to TGG independently on wavelength.« less

Body Doping Profile of Select Device to Minimize Program Disturbance in Three-Dimensional Stack NAND Flash Memory

NASA Astrophysics Data System (ADS)

Choe, Byeong-In; Park, Byung-Gook; Lee, Jong-Ho

2013-06-01

The program disturbance characteristic in the three-dimensional (3D) stack NAND flash was analyzed for the first time in terms of string select line (SSL) threshold voltage (Vth) and p-type body doping profile. From the edge word line (W/L) program disturbance, we can observe the boosted channel potential loss as a function of SSL Vth and body doping profile for SSL device. According to simulation work, a high Vth of the SSL device is required to suppress channel leakage during programming. When the body doping of the SSL device is high in the channel, there is a large band bending near the gate edge of the SSL adjacent to the edge W/L cell of boosted cell strings, which generates significantly electron-hole pairs. The generated electrons decreases the boosted channel potential, resulting in increase of program disturbance of the inhibit strings. Through optimization of the body doping profile of the SSL device, both channel leakage and the program disturbance are successfully suppressed for a highly reliable 3D stack NAND flash memory cell operation.

Thermally stable and high reflectivity Al-doped silver thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Lee, Kwang; Joo, Sin Yong; Lee, Kee-Sun

2018-03-01

Thermally stable, high reflectance thin film coatings are indispensable in optoelectronic devices, especially as a potential back reflector for LEDs and solar cells. The silver has the drawback of agglomerating easily and poor thermal stability, which is limiting its application as a highly reflective coating in various optoelectronic applications. In this study, improved thermal stability by modification of the Ag film into an Ag/Al-doped Ag structure has been confirmed. In this paper, the surface morphology, optical reflectance, and thermal stability of the Ag/Al-doped Ag are investigated. The Ag/Al-doped Ag/sapphire films showed excellent thermal stability after annealing the films at 523 K with the highest reflectance about ∼86% as compared to the pure Ag films. The grain growth analysis results revealed that the Al-doping is effective to restrain the severe grain growth of silver films. The Auger electron spectroscopy results revealed that the outer diffusion of aluminum and the formation of Al-O bond at the outermost silver layer which is beneficial to retard the Ag grain growth.

Modulation-doped growth of mosaic graphene with single-crystalline p–n junctions for efficient photocurrent generation

PubMed Central

Yan, Kai; Wu, Di; Peng, Hailin; Jin, Li; Fu, Qiang; Bao, Xinhe; Liu, Zhongfan

2012-01-01

Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of ~5,000 cm2 V−1 s−1 in intrinsic portion and ~2,500 cm2 V−1 s−1 in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p–n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p–n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film. PMID:23232410

Porous nitrogen-doped carbon derived from silk fibroin protein encapsulating sulfur as a superior cathode material for high-performance lithium-sulfur batteries.

PubMed

Zhang, Jiawei; Cai, Yurong; Zhong, Qiwei; Lai, Dongzhi; Yao, Juming

2015-11-14

The features of a carbon substrate are crucial for the electrochemical performance of lithium-sulfur (Li-S) batteries. Nitrogen doping of carbon materials is assumed to play an important role in sulfur immobilisation. In this study, natural silk fibroin protein is used as a precursor of nitrogen-rich carbon to fabricate a novel, porous, nitrogen-doped carbon material through facile carbonisation and activation. Porous carbon, with a reversible capacity of 815 mA h g(-1) at 0.2 C after 60 cycles, serves as the cathode material in Li-S batteries. Porous carbon retains a reversible capacity of 567 mA h g(-1), which corresponds to a capacity retention of 98% at 1 C after 200 cycles. The promising electrochemical performance of porous carbon is attributed to its mesoporous structure, high specific surface area and nitrogen doping into the carbon skeleton. This study provides a general strategy to synthesise nitrogen-doped carbons with a high specific surface area, which is crucial to improve the energy density and electrochemical performance of Li-S batteries.

Revealing Surface States in In-Doped SnTe Nanoplates with Low Bulk Mobility.

PubMed

Shen, Jie; Xie, Yujun; Cha, Judy J

2015-06-10

Indium (In) doping in topological crystalline insulator SnTe induces superconductivity, making In-doped SnTe a candidate for a topological superconductor. SnTe nanostructures offer well-defined nanoscale morphology and high surface-to-volume ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates, In(x)Sn(1-x)Te, with x ranging from 0 to 0.1 and show they superconduct. More importantly, we show that In doping reduces the bulk mobility of In(x)Sn(1-x)Te such that the surface states are revealed in magnetotransport despite the high bulk carrier density. This is manifested by two-dimensional linear magnetoresistance in high magnetic fields, which is independent of temperature up to 10 K. Aging experiments show that the linear magnetoresistance is sensitive to ambient conditions, further confirming its surface origin. We also show that the weak antilocalization observed in In(x)Sn(1-x)Te nanoplates is a bulk effect. Thus, we show that nanostructures and reducing the bulk mobility are effective strategies to reveal the surface states and test for topological superconductors.

Magneto-electronic phase separation in doped cobaltites

NASA Astrophysics Data System (ADS)

He, Chunyong

This thesis work mainly focuses on magneto-electronic phase separation (MEPS), an effect where chemically homogeneous materials display inhomogeneous magnetic and electronic properties. A model system La1-xSrxCoO3 (LSCO) is chosen for the study of MEPS. The doping evolution of MEPS in LSCO single crystals is extensively studied through complementary experimental techniques including heat capacity, small angle neutron scattering, magnetometry, and transport. It is found that there exists a finite doping range over which MEPS occurs. The doping range determined from different experimental techniques is found to be in good agreement. Also, this same doping range is reproduced by statistical simulations incorporating local compositional fluctuations. The excellent agreement between experimental data and statistical simulations leads to the conclusion that the MEPS in LSCO is driven solely by inevitable local compositional fluctuations at nanoscopic length scales. Such a conclusion indicates that nanoscopic MEPS is doping fluctuation-driven rather than electronically-driven in LSCO. The effect of microscopic magneto-electronic phase separation on electrical transport in LSCO is also examined. It is demonstrated (i) that the T = 0 metal-insulator transition can be understood within double exchange-modified percolation framework, and, (ii) that the onset of a phase-pure low T ferromagnetic state at high x has a profound effect on the high T transport. In addition, a new origin for finite spin Co ions in LaCoO3 is revealed via a Schottky Anomaly in the heat capacity, which was not previously known. Such a discovery casts a new understanding of the spin state at low temperature. Via small-angle neutron scattering and d.c. susceptibility, it is revealed that short-range ordered FM clusters exist below a well-defined temperature (T*) in highly doped LSCO. It is demonstrated that the characteristics of this clustered state appear quite unlike those of a Griffiths phase. Finally, through magenetometry and SANS, the magneto-crystalline anisotropy of highly doped LSCO is studied and the easy and hard magnetization axes are determined.

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

PubMed Central

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-01

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1−xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1−xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm−3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

3D nitrogen-doped graphene foam with encapsulated germanium/nitrogen-doped graphene yolk-shell nanoarchitecture for high-performance flexible Li-ion battery

PubMed Central

Mo, Runwei; Rooney, David; Sun, Kening; Yang, Hui Ying

2017-01-01

Flexible electrochemical energy storage devices have attracted extensive attention as promising power sources for the ever-growing field of flexible and wearable electronic products. However, the rational design of a novel electrode structure with a good flexibility, high capacity, fast charge–discharge rate and long cycling lifetimes remains a long-standing challenge for developing next-generation flexible energy-storage materials. Herein, we develop a facile and general approach to three-dimensional (3D) interconnected porous nitrogen-doped graphene foam with encapsulated Ge quantum dot/nitrogen-doped graphene yolk-shell nano architecture for high specific reversible capacity (1,220 mAh g−1), long cycling capability (over 96% reversible capacity retention from the second to 1,000 cycles) and ultra-high rate performance (over 800 mAh g−1 at 40 C). This work paves a way to develop the 3D interconnected graphene-based high-capacity electrode material systems, particularly those that suffer from huge volume expansion, for the future development of high-performance flexible energy storage systems. PMID:28051065

A simple and green pathway toward nitrogen and sulfur dual doped hierarchically porous carbons from ionic liquids for oxygen reduction

NASA Astrophysics Data System (ADS)

Cui, Zhentao; Wang, Shuguang; Zhang, Yihe; Cao, Minhua

2014-08-01

We for the first time demonstrate a simple and green approach to heteroatom (N and S) co-doped hierarchically porous carbons (N-S-HC) with high surface area by using one organic ionic liquid as nitrogen, sulfur and carbon sources and the eutectic salt as templating. The resultant dual-doped N-S-HC catalysts exhibit significantly enhanced electrocatalytic activity, long-term operation stability, and tolerance to crossover effect compared to commercial Pt/C for oxygen reduction reactions (ORR) in alkaline environment. The excellent electrocatalytic performance may be attributed to the synergistic effects, which includes more catalytic sites for ORR provided by N-S heteroatom doping and high electron transfer rate provided by hierarchically porous structure. The DFT calculations reveal that the dual doping of S and N atoms lead to the redistribution of spin and charge densities, which may be responsible for the formation of a large number of carbon atom active sites. This newly developed approach may supply an efficient platform for the synthesis of a series of heteroatom doped carbon materials for fuel cells and other applications.

Highly Conductive PEDOT:PSS Films with 1,3-Dimethyl-2-Imidazolidinone as Transparent Electrodes for Organic Light-Emitting Diodes.

PubMed

Kim, Jin Hee; Joo, Chul Woong; Lee, Jonghee; Seo, Yoon Kyung; Han, Joo Won; Oh, Ji Yoon; Kim, Jong Su; Yu, Seunggun; Lee, Jae Hyun; Lee, Jeong-Ik; Yun, Changhun; Choi, Bum Ho; Kim, Yong Hyun

2016-09-01

Highly conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) films as transparent electrodes for organic light-emitting diodes (OLEDs) are doped with a new solvent 1,3-dimethyl-2-imidazolidinone (DMI) and are optimized using solvent post-treatment. The DMI doped PSS films show significantly enhanced conductivities up to 812.1 S cm(-1) . The sheet resistance of the PSS films doped with DMI is further reduced by various solvent post-treatment. The effect of solvent post-treatment on DMI doped PSS films is investigated and is shown to reduce insulating PSS in the conductive films. The solvent posttreated PSS films are successfully employed as transparent electrodes in white OLEDs. It is shown that the efficiency of OLEDs with the optimized DMI doped PSS films is higher than that of reference OLEDs doped with a conventional solvent (ethylene glycol). The results present that the optimized PSS films with the new solvent of DMI can be a promising transparent electrode for low-cost, efficient ITO-free white OLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

pn junctions based on a single transparent perovskite semiconductor BaSnO3

NASA Astrophysics Data System (ADS)

Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Lee, Woongjae; Kim, Tai Hoon; Kim, Kee Hoon; Char, Kookrin; Mdpl, Department Of Physics; Astronomy Team; Censcmr, Department Of Physics; Astronomy Team

2014-03-01

Successful p doping of transparent oxide semiconductor will further increase its potential, especially in the area of optoelectronic applications. We will report our efforts to dope the BaSnO3 (BSO) with K by pulsed laser deposition. Although the K doped BSO exhibits rather high resistivity at room temperature, its conductivity increases dramatically at higher temperatures. Furthermore, the conductivity decreases when a small amount of oxygen was removed from the film, consistent with the behavior of p type doped oxides. We have fabricated pn junctions by using K doped BSO as a p type and La doped BSO as an n type material. I_V characteristics of these devices show the typical rectifying behavior of pn junctions. We will present the analysis of the junction properties from the temperature dependent measurement of their electrical properties, which shows that the I_V characteristics are consistent with the material parameters such as the carrier concentration, the mobility, and the bandgap. Our demonstration of pn junctions based on a single transparent perovskite semiconductor further enhances the potential of BSO system with high mobility and stability.

Origin of doping-induced suppression and reemergence of magnetism in LaFeAsO 1 - x H x

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moon, Chang-Youn; Park, Hyowon; Haule, Kristjan

We investigate the evolution of magnetic properties as a function of hydrogen doping in the iron-based superconductor LaFeAsO 1-xH x using dynamical mean-field theory combined with density-functional theory. We find that two independent consequences of doping, namely the increase of the electron occupation and the structural modification, have the opposite effects on the strength of electron correlation and magnetism, resulting in the minimum of the calculated magnetic moment around the intermediate doping level as a function of x. Our result provides a natural explanation for the recent, puzzling experimental discovery of two separated antiferromagnetic phases at low and high dopingmore » limits. Furthermore, the increase of the orbital occupation and correlation strength with doping results in reduced orbital polarization of d(xz/yz) orbitals and an enhanced role of the d(xy) orbital in the magnetism at high doping levels, and their possible implications on the superconductivity are discussed in line with the essential role of the magnetism.« less

Superionic Conductivity of Sm3+, Pr3+, and Nd3+ Triple-Doped Ceria through Bulk and Surface Two-Step Doping Approach.

PubMed

Liu, Yanyan; Fan, Liangdong; Cai, Yixiao; Zhang, Wei; Wang, Baoyuan; Zhu, Bin

2017-07-19

Sufficiently high oxygen ion conductivity of electrolyte is critical for good performance of low-temperature solid oxide fuel cells (LT-SOFCs). Notably, material conductivity, reliability, and manufacturing cost are the major barriers hindering LT-SOFC commercialization. Generally, surface properties control the physical and chemical functionalities of materials. Hereby, we report a Sm 3+ , Pr 3+ , and Nd 3+ triple-doped ceria, exhibiting the highest ionic conductivity among reported doped-ceria oxides, 0.125 S cm -1 at 600 °C. It was designed using a two-step wet-chemical coprecipitation method to realize a desired doping for Sm 3+ at the bulk and Pr 3+ /Nd 3+ at surface domains (abbreviated as PNSDC). The redox couple Pr 3+ /Pr 4+ contributes to the extraordinary ionic conductivity. Moreover, the mechanism for ionic conductivity enhancement is demonstrated. The above findings reveal that a joint bulk and surface doping methodology for ceria is a feasible approach to develop new oxide-ion conductors with high impacts on advanced LT-SOFCs.

High capacity nickel battery material doped with alkali metal cations

DOEpatents

Jackovitz, John F.; Pantier, Earl A.

1982-05-18

A high capacity battery material is made, consisting essentially of hydrated Ni(II) hydroxide, and about 5 wt. % to about 40 wt. % of Ni(IV) hydrated oxide interlayer doped with alkali metal cations selected from potassium, sodium and lithium cations.

A vanadium-doped ZnO nanosheets-polymer composite for flexible piezoelectric nanogenerators

NASA Astrophysics Data System (ADS)

Shin, Sung-Ho; Kwon, Yang Hyeog; Lee, Min Hyung; Jung, Joo-Yun; Seol, Jae Hun; Nah, Junghyo

2016-01-01

We report high performance flexible piezoelectric nanogenerators (PENGs) by employing vanadium (V)-doped ZnO nanosheets (NSs) and the polydimethylsiloxane (PDMS) composite structure. The V-doped ZnO NSs were synthesized to overcome the inherently low piezoelectric properties of intrinsic ZnO. Ferroelectric phase transition induced in the V-doped ZnO NSs contributed to significantly improve the performance of the PENGs after the poling process. Consequently, the PENGs exhibited high output voltage and current up to ~32 V and ~6.2 μA, respectively, under the applied strain, which are sufficient to directly turn on a number of light emitting diodes (LEDs). The composite approach for PENG fabrication is scalable, robust, and reproducible during periodic bending/releasing over extended cycles. The approach introduced here extends the performance limits of ZnO-based PENGs and demonstrates their potential as energy harvesting devices.We report high performance flexible piezoelectric nanogenerators (PENGs) by employing vanadium (V)-doped ZnO nanosheets (NSs) and the polydimethylsiloxane (PDMS) composite structure. The V-doped ZnO NSs were synthesized to overcome the inherently low piezoelectric properties of intrinsic ZnO. Ferroelectric phase transition induced in the V-doped ZnO NSs contributed to significantly improve the performance of the PENGs after the poling process. Consequently, the PENGs exhibited high output voltage and current up to ~32 V and ~6.2 μA, respectively, under the applied strain, which are sufficient to directly turn on a number of light emitting diodes (LEDs). The composite approach for PENG fabrication is scalable, robust, and reproducible during periodic bending/releasing over extended cycles. The approach introduced here extends the performance limits of ZnO-based PENGs and demonstrates their potential as energy harvesting devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07185b

The Introduction of substitutional and non-substitutional dopants into MgB2 in high pressure/Temperature or non-equilibrium regimes

NASA Astrophysics Data System (ADS)

Sumption, Mike

2013-03-01

In an attempt to study the effect of doping of MgB2 under conditions leading to efficient doping, we used both an high temperature/high pressure induction furnace to dope into MgB2 bulks at temperatures up to 1600 C and 1500 Psi, and thin film, PLD multilayer and mixed layer film fabrication. The high temperature/high pressure formation was used to explore the solubility at high temperatures of various dopants, and the thin film formation was an attempt to use non-equilibrium conditions to inject dopants more effectively. The dopants used were C, Ti, and Zr. C was seen to reach a maximal level at 4 at% C site substituted into MgB2, as evidenced by EPMA and XRD results. Zr, of interest as a possible Mg site substitution in MgB2 was not seen to enter into the MgB2 phase (instead segregating) in the bulk high temperature/high pressure experiments, but was seen to enter in during PLD, as evidenced by STEM and XRD results. Ti additions were attempted in the high pressures and temperature rig, with some evidence for dopant introduction. Critical field measurements on the Zr doped samples where seen to suppress Bc2 for all except very low levels of Ti addition, presumably associated with the much greater doping efficiency. This work was supported by the U.S. Department of Energy, High Energy Physics university Grant No. DE-FG02-95ER40900

[Doping, sport and addiction--any links?].

PubMed

Foucart, J; Verbanck, P; Lebrun, P

2015-01-01

Sport is widely encouraged as it is beneficial for health. However, high-performance sport is more and more associated to rather suspicious practices; doping is one of the best example. From a physician point of view, the use of doping agents is obviously a major concern because taking such products often induce serious adverse effects on health. The present manuscript aims to inform physicians about the most frequent doping practices. It also points out that intensive sport can generate an "addictive" behavior sharing with "common"addictions a loss of practice control, a lack of interest in other activities and even a sport's practice detrimental to athlete's health. Analysis of the doping issue needs to take this reality into account as some doping products display an established " addictive" effect.

Screening effects due to carrier doping on valley relaxation in transition metal dichalcogenide monolayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Konabe, Satoru

2016-08-15

This work theoretically investigated the mechanism of valley polarization relaxation in monolayers of transition metal dichalcogenides, focusing on the exchange interactions between electrons and holes. In particular, we elucidated the effects of screening resulting from carrier doping on valley depolarization dynamics. The results show that the valley relaxation time is highly dependent on the extent of carrier doping. In addition, a finite degree of doping is predicted to induce additional valley relaxation temperature dependence at low temperatures, an effect that is absent at zero doping. Our calculation results suggest the possibility of increasing the valley relaxation time by tuning carriermore » doping, which could present a means of manipulating the valley degrees of freedom.« less

Novel transparent conductor with enhanced conductivity: hybrid of silver nanowires and dual-doped graphene

NASA Astrophysics Data System (ADS)

Sohn, Hiesang; Woo, Yun Sung; Shin, Weonho; Yun, Dong-Jin; Lee, Taek; Kim, Felix Sunjoo; Hwang, Jinyoung

2017-10-01

We present hybrid transparent conducting films based on silver nanowires (Ag NWs) and doped graphene through novel dual co-doping method by applying various dopants (HNO3 or Au for p-doping and N2H4 for n-doping) on top and bottom sides of graphene. We systematically investigated the effect of dual-doping on their surface as well as electrical and optical properties of graphene and Ag NW/graphene hybrid films through the combination study with various dopant types (p/p, p/n, n/p, and n/n). We found that the p/p-type dual-doped (p-type dopant: HNO3) graphene and its hybrid formation with Ag NWs appeared to be the most effective in enhancing the electrical properties of conductor (doped graphene with ΔR/R0 = 84% and Ag NW/doped graphene hybrid with ΔR/R0 = 62%), demonstrating doped monolayer graphene with high optical transmittance (TT = 97.4%), and sheet resistance (Rs = 188 Ω/sq.). We also note that dual-doping improved such electrical properties without any significant debilitation of optical transparency of conductors (doped graphene with ΔTT = 0.1% and Ag NW/doped graphene hybrid with ΔTT = 0.4%). In addition, the enhanced conductivity of p-type dual-doped graphene allows a hybrid system to form co-percolating network in which Ag NWs can form a secondary conductive path at grain boundaries of polycrystalline graphene.

The preparation of in situ doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition

NASA Astrophysics Data System (ADS)

Meyerson, B. S.; Scott, B. A.; Wolford, D. J.

1983-03-01

Raman scattering, infrared absorption, conductivity measurements, electron microprobe, and secondary ion mass spectrometry (SIMS) were used to characterize boron and phosphorus doped hydrogenated amorphous silicon (a-Si:H) films prepared by Homogeneous Chemical Vapor Deposition (HOMOCVD). HOMOCVD is a thermal process which relies upon the gas phase pyrolysis of a source (silane containing up to 1.0% diborane or phosphine) to generate activated species for deposition upon a cooled substrate. Doped films prepared at 275 °C by this process were found to contain ˜12-at. % hydrogen as determined by infrared absorption. We examined dopant incorporation from the gas phase, obtaining values for a distribution coefficient CD (film dopant content/gas phase dopant concentration, atomic basis) of 0.33≤CD ≤0.63 for boron, while 0.4≤CD ≤10.75 in the limits 3.3×10-5≤PH3/SiH4≤0.004. We interpret the data as indicative of the formation of an unstable phosphorus/silicon intermediate in the gas phase, leading to the observed enhancements in CD at high gas phase phosphine content. HOMOCVD films doped at least as efficiently as their prepared counterparts, but tended to achieve higher conductivities [σ≥0.1 (Ω cm)-1 for 4.0% incorporated phosphorus] in the limit of heavy doping. Raman spectra showed no evidence of crystallinity in the doped films. Film properties (conductivity, activation energy of of conduction) have not saturated at the doping levels investigated here, making the attainment of higher ``active'' dopant levels a possibility. We attribute the observation that HOMOCVD appears more amenable to high ``active'' dopant levels than plasma techniques to the low (˜0.1 eV) thermal energy at which HOMOCVD proceeds, versus ˜10-100 eV for plasma techniques. Low substrate temperature (75 °C) doped films were prepared with initial results showing these films to dope as readily as those prepared at high temperature (T˜275 °C).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nathanael, A. Joseph; Department of Nanomaterials Engineering, Chungnam National University, Daejeon, 305-764; Mangalaraj, D., E-mail: dmraj800@yahoo.com

In this study, undoped and yttrium (Y) doped nanocrystalline hydroxyapatite crystals were synthesized by the hydrothermal method at 180 Degree-Sign C for 24 h. Highly ordered and oriented hydroxyapatite (HAp) nanorods were prepared by yttrium doping and their nanostructure and physical properties were compared with those of undoped HAp rods. FESEM images showed that the doping with Y ions reduced the diameter (from 25 nm to 15 nm) and increased the length (from 95 nm to 115 nm) of the synthesized rods. The aspect ratio of the undoped and Y-doped nanorods were calculated to be 4.303 (SD = 0.0959) andmore » 7.61 (SD = 0.0355), respectively. Specific surface area (SSA) analysis showed that SSA also increased from 66.74 m{sup 2}/g to 68.57 m{sup 2}/g with the addition of yttrium. Y-doped HAp nanorod reinforced HMWPE composites displayed the better mechanical performance than those reinforced with pure HAp nanorods. The possible strengthening of nanorods and the increase of SSA due to the reduction in the size of nanorods in the presence of yttrium may have contributed to the strengthening of Y-doped HAp/HMWPE composites. - Graphical Abstract: Highly ordered and oriented yttrium doped hydroxyapatite (HAp) nanorods were prepared by hydrothermal method. For undoped HAp the average length of the nanorod is 95 nm with mean diameter of 24 nm and for a Y doped nanorod the average length is {approx} 115 nm and the mean diameter is 15 nm. Mechanical analysis was carried out by polymer/nanoparticle composite method. Highlights: Black-Right-Pointing-Pointer Yttrium doped hydroxyapatite nanorods were prepared by hydrothermal method. Black-Right-Pointing-Pointer The nanorods have highly uniform size distribution. Black-Right-Pointing-Pointer Yttrium substitution and nanostructure formation was confirmed by careful analysis. Black-Right-Pointing-Pointer Mechanical strength was analyzed by polymer nanoparticle reinforcement method.« less

Modifying the size and uniformity of upconversion Yb/Er:NaGdF4 nanocrystals through alkaline-earth doping.

PubMed

Lei, Lei; Chen, Daqin; Huang, Ping; Xu, Ju; Zhang, Rui; Wang, Yuansheng

2013-11-21

NaGdF4 is regarded as an ideal upconversion (UC) host material for lanthanide (Ln(3+)) activators because of its unique crystal structure, high Ln(3+) solubility, low phonon energy and high photochemical stability, and Ln(3+)-doped NaGdF4 UC nanocrystals (NCs) have been widely investigated as bio-imaging and magnetic resonance imaging agents recently. To realize their practical applications, controlling the size and uniformity of the monodisperse Ln(3+)-doped NaGdF4 UC NCs is highly desired. Unlike the routine routes by finely adjusting the multiple experimental parameters, herein we provide a facile and straightforward strategy to modify the size and uniformity of NaGdF4 NCs via alkaline-earth doping for the first time. With the increase of alkaline-earth doping content, the size of NaGdF4 NCs increases gradually, while the size-uniformity is still retained. We attribute this "focusing" of size distribution to the diffusion controlled growth of NaGdF4 NCs induced by alkaline-earth doping. Importantly, adopting the Ca(2+)-doped Yb/Er:NaGdF4 NCs as cores, the complete Ca/Yb/Er:NaGdF4@NaYF4 core-shell particles with excellent size-uniformity can be easily achieved. However, when taking the Yb/Er:NaGdF4 NCs without Ca(2+) doping as cores, they could not be perfectly covered by NaYF4 shells, and the obtained products are non-uniform in size. As a result, the UC emission intensity of the complete core-shell NCs increases by about 30 times in comparison with that of the cores, owing to the effective surface passivation of the Ca(2+)-doped cores and therefore protection of Er(3+) in the cores from the non-radiative decay caused by surface defects, whereas the UC intensity of the incomplete core-shell NCs is enhanced by only 3 times.

Evidence from EXAFS for Different Ta/Ti Site Occupancy in High Critical Current Density Nb3Sn Superconductor Wires.

PubMed

Heald, Steve M; Tarantini, Chiara; Lee, Peter J; Brown, Michael D; Sung, ZuHawn; Ghosh, Arup K; Larbalestier, David C

2018-03-19

To meet critical current density, J c , targets for the Future Circular Collider (FCC), the planned replacement for the Large Hadron Collider (LHC), the high field performance of Nb 3 Sn must be improved, but champion J c values have remained static for the last 10 years. Making the A15 phase stoichiometric and enhancing the upper critical field H c2 by Ti or Ta dopants are the standard strategies for enhancing high field performance but detailed recent studies show that even the best modern wires have broad composition ranges. To assess whether further improvement might be possible, we employed Extended X-ray Absorption Fine Structure (EXAFS) to determine the lattice site location of dopants in modern high-performance Nb 3 Sn strands with J c values amongst the best so far achieved. Although Ti and Ta primarily occupy the Nb sites in the A15 structure, we also find significant Ta occupancy on the Sn site. These findings indicate that the best performing Ti-doped stand is strongly sub-stoichiometric in Sn and that antisite disorder likely explains its high average H c2 behavior. These new results suggest an important role for dopant and antisite disorder in minimizing superconducting property distributions and maximizing high field J c properties.

Evidence from EXAFS for Different Ta/Ti Site Occupancy in High Critical Current Density Nb 3Sn Superconductor Wires

DOE PAGES

Heald, Steve M.; Tarantini, Chiara; Lee, Peter J.; ...

2018-03-19

To meet critical current density, Jc, targets for the Future Circular Collider (FCC), the planned replacement for the Large Hadron Collider (LHC), the high field performance of Nb 3Sn must be improved, but champion J c values have remained static for the last 10 years. Making the A15 phase stoichiometric and enhancing the upper critical field H c2 by Ti or Ta dopants are the standard strategies for enhancing high field performance but detailed recent studies show that even the best modern wires have broad composition ranges. To assess whether further improvement might be possible, we employed EXAFS to determinemore » the lattice site location of dopants in modern high-performance Nb 3Sn strands with J c values amongst the best so far achieved. Although Ti and Ta primarily occupy the Nb sites in the A15 structure, we also find significant Ta occupancy on the Sn site. These findings indicate that the best performing Ti-doped stand is strongly sub-stoichiometric in Sn and that antisite disorder likely explains its high average H c2 behavior. These new results suggest an important role for dopant and antisite disorder in minimizing superconducting property distributions and maximizing high field J c properties.« less

Evidence from EXAFS for Different Ta/Ti Site Occupancy in High Critical Current Density Nb 3Sn Superconductor Wires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heald, Steve M.; Tarantini, Chiara; Lee, Peter J.

To meet critical current density, Jc, targets for the Future Circular Collider (FCC), the planned replacement for the Large Hadron Collider (LHC), the high field performance of Nb 3Sn must be improved, but champion J c values have remained static for the last 10 years. Making the A15 phase stoichiometric and enhancing the upper critical field H c2 by Ti or Ta dopants are the standard strategies for enhancing high field performance but detailed recent studies show that even the best modern wires have broad composition ranges. To assess whether further improvement might be possible, we employed EXAFS to determinemore » the lattice site location of dopants in modern high-performance Nb 3Sn strands with J c values amongst the best so far achieved. Although Ti and Ta primarily occupy the Nb sites in the A15 structure, we also find significant Ta occupancy on the Sn site. These findings indicate that the best performing Ti-doped stand is strongly sub-stoichiometric in Sn and that antisite disorder likely explains its high average H c2 behavior. These new results suggest an important role for dopant and antisite disorder in minimizing superconducting property distributions and maximizing high field J c properties.« less

Macro- and microscopic properties of strontium doped indium oxide

NASA Astrophysics Data System (ADS)

Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

2014-07-01

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T = 20-300 °C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x = 10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x = 10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 °C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3 × 10-13 cm2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

Mo-doped SnO2 mesoporous hollow structured spheres as anode materials for high-performance lithium ion batteries

NASA Astrophysics Data System (ADS)

Wang, Xuekun; Li, Zhaoqiang; Zhang, Zhiwei; Li, Qun; Guo, Enyan; Wang, Chengxiang; Yin, Longwei

2015-02-01

We designed a facile infiltration route to synthesize mesoporous hollow structured Mo doped SnO2 using silica spheres as templates. It is observed that Mo is uniformly incorporated into SnO2 lattice in the form of Mo6+. The as-prepared mesoporous Mo-doped SnO2 LIBs anodes exhibit a significantly improved electrochemical performance with good cycling stability, high specific capacity and high rate capability. The mesoporous hollow Mo-doped SnO2 sample with 14 at% Mo doping content displays a specific capacity of 801 mA h g-1 after 60 cycles at a current density of 100 mA g-1, about 1.66 times higher than that of the pure SnO2 hollow sample. In addition, even if the current density is as high as 1600 mA g-1 after 60 cycles, it could still retain a stable specific capacity of 530 mA h g-1, exhibiting an extraordinary rate capability. The greatly improved electrochemical performance of the Mo-doped mesoporous hollow SnO2 sample could be attributed to the following factors. The large surface area and hollow structure can significantly enhance structural integrity by acting as mechanical buffer, effectively alleviating the volume changes generated during the lithiation/delithiation process. The incorporation of Mo into the lattice of SnO2 improves charge transfer kinetics and results in a faster Li+ diffusion rate during the charge-discharge process.

Upper bound for the s -d exchange integral in n -(Ga,Mn)N:Si from magnetotransport studies

NASA Astrophysics Data System (ADS)

Adhikari, R.; Stefanowicz, W.; Faina, B.; Capuzzo, G.; Sawicki, M.; Dietl, T.; Bonanni, A.

2015-05-01

A series of recent magneto-optical studies pointed to contradicting values of the s -d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry-breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0α for n -type wurtzite (Ga,Mn)N:Si films grown by metalorganic vapor phase epitaxy. Millikelvin magnetoresistance studies and their quantitative interpretation point to N0α <40 meV, a value at least 5 times smaller than the one found with similar measurements on, e.g., n -(Zn,Mn)O. It is shown that this striking difference in the values of the s -d coupling between n -type III-V and II-VI dilute magnetic semiconductors can be explained by a theory that takes into account the acceptor character of Mn in III-V compounds.

Effects of neutron irradiation on carbon doped MgB2 wire segments

NASA Astrophysics Data System (ADS)

Wilke, R. H. T.; Bud'ko, S. L.; Canfield, P. C.; Finnemore, D. K.; Suplinskas, Raymond J.; Farmer, J.; Hannahs, S. T.

2006-06-01

We have studied the evolution of superconducting and normal state properties of neutron irradiated Mg(B0.962C0.038)2 wire segments as a function of post-exposure annealing time and temperature. The initial fluence fully suppressed superconductivity and resulted in an anisotropic expansion of the unit cell. Superconductivity was restored by post-exposure annealing. The upper critical field, Hc2(T = 0), approximately scales with Tc, starting with an undamaged Tc near 37 K and Hc2(T = 0) near 32 T. Up to an annealing temperature of 400 °C the recovery of Tc tends to coincide with a decrease in the normal state resistivity and a systematic recovery of the lattice parameters. Above 400 °C a decrease in ordering along the c-direction coincides with an increase in resistivity, but no apparent change in the evolution of Tc and Hc2. To a first order approximation, it appears that carbon doping and neutron damage affect the superconducting properties of MgB2 independently.

Origin of subgap states in amorphous In-Ga-Zn-O

NASA Astrophysics Data System (ADS)

Körner, Wolfgang; Urban, Daniel F.; Elsässer, Christian

2013-10-01

We present a density functional theory analysis of stoichiometric and nonstoichiometric, crystalline and amorphous In-Ga-Zn-O (c-IGZO, a-IGZO), which connects the recently experimentally discovered electronic subgap states to structural features of a-IGZO. In particular, we show that undercoordinated oxygen atoms create electronic defect levels in the lower half of the band gap up to about 1.5 eV above the valence band edge. As a second class of fundamental defects that appear in a-IGZO, we identify mainly pairs of metal atoms which are not separated by oxygen atoms in between. These defects cause electronic defect levels in the upper part of the band gap. Furthermore, we show that hydrogen doping can suppress the deep levels due to undercoordinated oxygen atoms while those of metal defects just undergo a shift within the band gap. Altogether our results provide an explanation for the experimentally observed effect that hydrogen doping increases the transparency and improves the conductivity of a-IGZO.

Morphology-controlled synthesis and novel microwave electromagnetic properties of hollow urchin-like chain Fe-doped MnO 2 under 10 T high magnetic field

NASA Astrophysics Data System (ADS)

Yuping, Duan; Jia, Zhang; Hui, Jing; Shunhua, Liu

2011-05-01

Fe-doped MnO 2 with a hollow sea urchin-like ball chain shape was first synthesized under a high magnetic field of 10 T. The formation mechanism was investigated and discussed in detail. The synthesized samples were characterized by XRD, SEM, TEM, EMPA, and vector network analysis. By doping MnO 2 with Fe, the relative complex permittivity of MnO 2 and its corresponding loss tangent clearly decreases, but its relative complex permeability and its corresponding loss tangent markedly increases. Moreover, the theoretically calculated values of reflection loss show that with increasing the Fe content, the as-prepared Fe-doped MnO 2 exhibits good microwave absorption capability.

Multilayer optical dielectric coating

DOEpatents

Emmett, John L.

1990-01-01

A highly damage resistant, multilayer, optical reflective coating includes alternating layers of doped and undoped dielectric material. The doping levels are low enough that there are no distinct interfaces between the doped and undoped layers so that the coating has properties nearly identical to the undoped material. The coating is fabricated at high temperature with plasma-assisted chemical vapor deposition techniques to eliminate defects, reduce energy-absorption sites, and maintain proper chemical stoichiometry. A number of differently-doped layer pairs, each layer having a thickness equal to one-quarter of a predetermined wavelength in the material are combined to form a narrowband reflective coating for a predetermined wavelength. Broadband reflectors are made by using a number of narrowband reflectors, each covering a portion of the broadband.

Highly efficient up-conversion and bright white light in RE co-doped KYF4 nanocrystals in sol-gel silica matrix

NASA Astrophysics Data System (ADS)

Méndez-Ramos, J.; Yanes, A. C.; Santana-Alonso, A.; del-Castillo, J.

2013-01-01

Transparent nano-glass-ceramics comprising Yb3+, Er3+ and Tm3+ co-doped KYF4 nanocrystals have been developed from sol-gel method. A structural analysis by means of X-ray diffraction confirmed the precipitation of cubic KYF4 nanocrystals into a silica matrix. Visible luminescence has been analyzed as function of treatment temperature of precursor sol-gel glasses. Highly efficient up-conversion emissions have been obtained under 980 nm excitation and studied by varying the doping level, processing temperature and pump power. Color tuneability has been quantified in terms of CIE diagram and in particular, a white-balanced overall emission has been achieved for a certain doping level and thermal treatment.

Superconductivity in electron-doped arsenene

NASA Astrophysics Data System (ADS)

Kong, Xin; Gao, Miao; Yan, Xun-Wang; Lu, Zhong-Yi; Xiang, Tao

2018-04-01

Based on the first-principles density functional theory electronic structure calculation, we investigate the possible phonon-mediated superconductivity in arsenene, a two-dimensional buckled arsenic atomic sheet, under electron doping. We find that the strong superconducting pairing interaction results mainly from the $p_z$-like electrons of arsenic atoms and the $A_1$ phonon mode around the $K$ point, and the superconducting transition temperature can be as high as 30.8 K in the arsenene with 0.2 doped electrons per unit cell and 12\\% applied biaxial tensile strain. This transition temperature is about ten times higher than that in the bulk arsenic under high pressure. It is also the highest transition temperature that is predicted for electron-doped two-dimensional elemental superconductors, including graphene, silicene, phosphorene, and borophene.

Morphology-controllable of Sn doped ZnO nanorods prepared by spray pyrolysis for transparent electrode application

NASA Astrophysics Data System (ADS)

Hameed, M. Shahul; Princice, J. Joseph; Babu, N. Ramesh; Zahirullah, S. Syed; Deshmukh, Sampat G.; Arunachalam, A.

2018-05-01

Transparent conductive Sn doped ZnO nanorods have been deposited at various doping level by spray pyrolysis technique on glass substrate. The structural, surface morphological and optical properties of these films have been investigated with the help of X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-Vis spectrophotometer respectively. XRD patterns revealed a successful high quality growth of single crystal ZnO nanorods with hexagonal wurtzite structure having (002) preferred orientation. The scanning electron microscope (SEM) image of the prepared films exposed the uniform distribution of Sn doped ZnO nanorod shaped grains. All these films were highly transparent in the visible region with average transmittance of 90%.

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (<3 × 1017 cm-3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

Notes on the plasma resonance peak employed to determine doping in SiC

DOE PAGES

Engelbrecht, J. A. A.; van Rooyen, I. J.; Henry, A.; ...

2015-07-23

In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.

Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Viana, Bruno; Lupan, Oleg; Pauporté, Thierry

2011-01-01

The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.

Structure and intense UV up-conversion emissions in RE3+-doped sol-gel glass-ceramics containing KYF4 nanocrystals

NASA Astrophysics Data System (ADS)

Yanes, A. C.; Santana-Alonso, A.; Méndez-Ramos, J.; del-Castillo, J.

2013-12-01

Transparent nano-glass-ceramics containing KYF4 nanocrystals were successfully obtained by the sol-gel method, doped with Eu3+ and co-doped with Yb3+ and Tm3+ ions. Precipitation of cubic KYF4 nanocrystals was confirmed by X-ray diffraction and high-resolution transmission electron microscope images. Excitation and emission spectra let us to discern between ions into KYF4 nanocrystals and those remaining in a glassy environment, supplemented with time-resolved photoluminescence decays, that also clearly reveal differences between local environments. Unusual high-energy up-conversion emissions in the UV range were obtained in Yb3+-Tm3+ co-doped samples, and involved mechanisms were discussed. The intensity of these high-energy emissions was analyzed as a function of Yb3+ concentration, heat treatment temperature of precursor sol-gel glasses and pump power, determining the optimum values for potential optical applications as highly efficient UV up-conversion materials in UV solid-state lasers.

Nitrogen-doped ordered mesoporous carbon with a high surface area, synthesized through organic-inorganic coassembly, and its application in supercapacitors.

PubMed

Song, Yanfang; Li, Li; Wang, Yonggang; Wang, Congxiao; Guo, Zaipin; Xia, Yongyao

2014-07-21

A new nitrogen-doped ordered mesoporous carbon (N-doped OMC) is synthesized by using an organic-inorganic coassembly method, in which resol is used as the carbon precursor, dicyandiamide as the nitrogen precursor, silicate oligomers as the inorganic precursors, and F127 as the soft template. The N-doped OMC possesses a surface area as high as 1374 m(2)  g(-1) and a large pore size of 7.4 nm. As an electrode material for supercapacitors, the obtained carbon exhibits excellent cycling stability and delivers a reversible specific capacitance as high as 308 F g(-1) in 1 mol L(-1) H(2)SO(4) aqueous electrolyte, of which 58 % of the capacity is due to pseudo-capacitance. The large specific capacitance is attributed to proper pore size distributions, large surface area, and high nitrogen content. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Doping and controllable pore size enhanced electrochemical performance of free-standing 3D graphene films

NASA Astrophysics Data System (ADS)

Wang, Liping; Qin, Kaiqiang; Li, Jiajun; Zhao, Naiqin; Shi, Chunsheng; Ma, Liying; He, Chunnian; He, Fang; Liu, Enzuo

2018-01-01

High quality free-standing 3D nanoporous graphene (3DNG) films were fabricated using nanoporous nickel as template and catalyst. The effect of heteroatom doping and pore size on the electrochemical performance of the 3D graphene films as supercapacitor electrodes are systematically studied. Compared with macroporous graphene films, nanoporous graphene films exhibit an extraordinarily large operational window in neutral, acidic and alkaline aqueous electrolytes, as well as high packing density. Nitrogen and oxygen doping play different roles in different aqueous electrolytes on the electrical conductivity and pseudocapacitance of 3DNG. The realization of both high packing density, 3.65 mg/cm2, and the maximum working window, as well as the synergistic effect between N and O doping, gives rise to a high areal capacitance of 435 mF/cm2 in neutral electrolyte and excellent cycle stability up to 5000 cycles. The results provide a potential strategy to further increase the volumetric or areal energy density of carbon-based aqueous supercapacitor.

Carbon-doped SnS2 nanostructure as a high-efficiency solar fuel catalyst under visible light.

PubMed

Shown, Indrajit; Samireddi, Satyanarayana; Chang, Yu-Chung; Putikam, Raghunath; Chang, Po-Han; Sabbah, Amr; Fu, Fang-Yu; Chen, Wei-Fu; Wu, Chih-I; Yu, Tsyr-Yan; Chung, Po-Wen; Lin, M C; Chen, Li-Chyong; Chen, Kuei-Hsien

2018-01-12

Photocatalytic formation of hydrocarbons using solar energy via artificial photosynthesis is a highly desirable renewable-energy source for replacing conventional fossil fuels. Using an L-cysteine-based hydrothermal process, here we synthesize a carbon-doped SnS 2 (SnS 2 -C) metal dichalcogenide nanostructure, which exhibits a highly active and selective photocatalytic conversion of CO 2 to hydrocarbons under visible-light. The interstitial carbon doping induced microstrain in the SnS 2 lattice, resulting in different photophysical properties as compared with undoped SnS 2 . This SnS 2 -C photocatalyst significantly enhances the CO 2 reduction activity under visible light, attaining a photochemical quantum efficiency of above 0.7%. The SnS 2 -C photocatalyst represents an important contribution towards high quantum efficiency artificial photosynthesis based on gas phase photocatalytic CO 2 reduction under visible light, where the in situ carbon-doped SnS 2 nanostructure improves the stability and the light harvesting and charge separation efficiency, and significantly enhances the photocatalytic activity.

High-Performance Organic Light-Emitting Diode with Substitutionally Boron-Doped Graphene Anode.

PubMed

Wu, Tien-Lin; Yeh, Chao-Hui; Hsiao, Wen-Ting; Huang, Pei-Yun; Huang, Min-Jie; Chiang, Yen-Hsin; Cheng, Chien-Hong; Liu, Rai-Shung; Chiu, Po-Wen

2017-05-03

The hole-injection barrier between the anode and the hole-injection layer (HIL) is of critical importance to determine the device performance of organic light-emitting diodes (OLEDs). Here, we report on a record-high external quantum efficiency (EQE) (24.6% in green phosphorescence) of OLEDs fabricated on both rigid and flexible substrates, with the performance enhanced by the use of nearly defect-free and high-mobility boron-doped graphene as an effective anode and hexaazatriphenylene hexacarbonitrile as a new type of HIL. This new structure outperforms the existing graphene-based OLEDs, in which MoO 3 , AuCl 3 , or bis(trifluoromethanesulfonyl)amide are typically used as a doping source for the p-type graphene. The improvement of the OLED performance is attributed mainly to the appreciable increase of the hole conductivity in the nearly defect-free boron-doped monolayer graphene, along with the high work function achieved by the use of a newly developed hydrocarbon precursor containing boron in the graphene growth by chemical vapor deposition.

High performance capacitive deionization using modified ZIF-8-derived, N-doped porous carbon with improved conductivity.

PubMed

Li, Yang; Kim, Jeonghun; Wang, Jie; Liu, Nei-Ling; Bando, Yoshio; Alshehri, Abdulmohsen Ali; Yamauchi, Yusuke; Hou, Chia-Hung; Wu, Kevin C-W

2018-06-05

Zeolitic imidazolate framework (ZIF) composite-derived carbon exhibiting large surface area and high micropore volume is demonstrated to be a promising electrode material for the capacitive deionization (CDI) application. However, some inherent serious issues (e.g., low electrical conductivity, narrow pore size, relatively low pore volume, etc.) are still observed for nitrogen-doped porous carbon particles, which restrict their CDI performance. To solve the above-mentioned problems, herein, we prepared gold-nanoparticle-embedded ZIF-8-derived nitrogen-doped carbon calcined at 800 °C (Au@NC800) and PEDOT doped-NC-800 (NC800-PEDOT). The newly generated NC800-PEDOT and Au@NC800 electrodes exhibited notably increased conductivity, and they also achieved high electrosorption capacities of 16.18 mg g-1 and 14.31 mg g-1, respectively, which were much higher than that of NC800 (8.36 mg g-1). Au@NC800 and NC800-PEDOT can be promisingly applicable as highly efficient CDI electrode materials.

Pseudocapacitive behavior of manganese oxide in lithium-ion-doped butylmethylpyrrolidinium-dicyanamide ionic liquid investigated using in situ X-ray absorption spectroscopy

NASA Astrophysics Data System (ADS)

Lee, Ming-Tsung; Li, Yun-Shan; Sun, I.-Wen; Chang, Jeng-Kuei

2014-01-01

Ideal pseudocapacitive behavior of α-MnO2 electrodes over a potential range of 3 V is found in lithium bis(trifluoromethylsulfonyl)imide (LiTFSI)-doped butylmethylpyrrolidinium-dicyanamide (BMP-DCA) ionic liquid (IL), which is non-flammable and has a decomposition temperature of as high as ∼300 °C. Accordingly, this electrolyte is promising for high-energy, high-power, and high-safety supercapacitor applications. The addition of 0.01 M LiTFSI in the IL improves the oxide capacitance from 90 F g-1 to 120 F g-1, which is due to the incorporated Li+ ions promoting Mn valent state variation (between trivalent and tetravalent) during charge-discharge. However, excessive LiTFSI doping causes a capacitance decay due to reduced electrolyte ionic conductivity. In situ X-ray absorption spectroscopy is used to investigate the energy storage mechanism. A capacitance activation process of α-MnO2 in the Li+-doped BMP-DCA IL is found.

Thickness and Nb-doping effects on ferro- and piezoelectric properties of highly a-axis-oriented Nb-doped Pb(Zr0.3Ti0.7)O3 films

NASA Astrophysics Data System (ADS)

Zhu, Zhi-Xiang; Ruangchalermwong, C.; Li, Jing-Feng

2008-09-01

Tetragonal Nb-doped Pb(Zr0.3Ti0.7)O3 (PNZT) films with a lead oxide seeding layer were deposited on the Pt(111)/Ti/SiO2/Si(100) substrates by sol-gel processing. The as-grown PNZT films with thicknesses ranging from about 0.08 to 0.78 μm show highly a-axis preferential orientation, and their ferroelectric and piezoelectric properties improved with increasing film thickness. Due to the combined effects of Nb doping and a-axis texturing as well as reduced substrate constraint, a high d33 constant up to 196 pm/V was obtained for PNZT film at 0.78 μm in addition to a large remnant polarization of 69 μC/cm2. This well a-axis-oriented PNZT films on platinized Si with a high piezoresponse are suitable for the fabrication of microelectromechanical devices.

One - Step synthesis of nitrogen doped reduced graphene oxide with NiCo nanoparticles for ethanol oxidation in alkaline media.

PubMed

Kakaei, Karim; Marzang, Kamaran

2016-01-15

Development of anode catalysts and catalyst supporting carbonaceous material containing non-precious metal have attracted tremendous attention in the field of direct ethanol fuel cells (DEFCs). Herein, we report the synthesis and electrochemical properties of nitrogen-doped reduced graphene oxide (NRGO) supported Co, Ni and NiCo nanocomposites. The metal NRGO nanocomposites, in which metal nanoparticles are embedded in the highly porous nitrogen-doped graphene matrix, have been synthesized by simply and one-pot method at a mild temperature using GO, urea choline chloride and urea as reducing and doping agent. The fabricated NiCo/NRGO exhibit remarkable electrocatalytic activity (with Tafel slope of 159.1mVdec(-1)) and high stability for the ethanol oxidation reaction (EOR). The superior performance of the alloy based NRGO is attributed to high surface area, well uniform distribution of high-density nitrogen, metal active sites and synergistic effect. Copyright © 2015 Elsevier Inc. All rights reserved.

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

PubMed Central

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-01-01

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm−3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab. PMID:27550805

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.

PubMed

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-08-23

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 10(18) cm(-3) was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

NASA Astrophysics Data System (ADS)

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-08-01

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Dong-Wook, E-mail: shindong37@skku.edu; Kim, Tae Sung; Yoo, Ji-Beom, E-mail: jbyoo@skku.edu

Highlights: • Substitution doping is a promising method for opening the energy band gap of graphene. • Substitution doping with phosphorus in the graphene lattice has numerous advantage such as high band gap, low formation energy, and high net charge density compared to nitrogen. • V{sub dirac} of Inductively coupled plasma (ICP) and triphenylphosphine (TPP) treated graphene was −57 V, which provided clear evidence of n-type doping. • Substitutional doping of graphene with phosphorus is verified by the XPS spectra of P 2p core level and EELS mapping of phosphorus. • The chemical bonding between P and graphene is verymore » stable for a long time in air (2 months). - Abstract: Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a V{sub dirac} of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Wug-Dong; Tanioka, Kenkichi

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a longmore » wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.« less

Effect of nitrogen doping on the microstructure and visible light photocatalysis of titanate nanotubes by a facile cohydrothermal synthesis via urea treatment

NASA Astrophysics Data System (ADS)

Hu, Cheng-Ching; Hsu, Tzu-Chien; Lu, Shan-Yu

2013-09-01

A facile one-step cohydrothermal synthesis via urea treatment has been adopted to prepare a series of nitrogen-doped titanate nanotubes with highly efficient visible light photocatalysis of rhodamine B, in an effect to identify the effect of nitrogen doping on the photodegradation efficiency. The morphology and microstructure of the thus-prepared N-doped titanates were characterized by nitrogen adsorption/desorption isotherms, transmission electron microscopy, and scanning electron microscopy. With increasing urea loadings, the N-doped titanates change from a porous multi-layer and nanotube-shaped to a dense and aggregated particle-shaped structure, accompanied with reduced specific surface area and pore volume and enhanced pore diameter. Interstitial linkage to titanate via Tisbnd Osbnd N and Tisbnd Nsbnd O is confirmed by X-ray photoelectron spectroscopy. Factors governing the photocatalytic degradation such as the specific surface area of the catalyst and the degradation pathway are analyzed, a mechanistic illustration on the photodegradation is provided, and a 3-stage degradation mechanism is identified. The synergistic contribution due to the enhanced deethylation and chromophore cleavage on rhodamine B molecules and the reduced band gap on the catalyst TiO2 by interstitial nitrogen-doping has been accounted for the high photodegradation efficiency of the N-doped titanate nanotubes.

The cellular magnetic response and biocompatibility of biogenic zinc- and cobalt-doped magnetite nanoparticles

NASA Astrophysics Data System (ADS)

Moise, Sandhya; Céspedes, Eva; Soukup, Dalibor; Byrne, James M.; El Haj, Alicia J.; Telling, Neil D.

2017-01-01

The magnetic moment and anisotropy of magnetite nanoparticles can be optimised by doping with transition metal cations, enabling their properties to be tuned for different biomedical applications. In this study, we assessed the suitability of bacterially synthesized zinc- and cobalt-doped magnetite nanoparticles for biomedical applications. To do this we measured cellular viability and activity in primary human bone marrow-derived mesenchymal stem cells and human osteosarcoma-derived cells. Using AC susceptibility we studied doping induced changes in the magnetic response of the nanoparticles both as stable aqueous suspensions and when associated with cells. Our findings show that the magnetic response of the particles was altered after cellular interaction with a reduction in their mobility. In particular, the strongest AC susceptibility signal measured in vitro was from cells containing high-moment zinc-doped particles, whilst no signal was observed in cells containing the high-anisotropy cobalt-doped particles. For both particle types we found that the moderate dopant levels required for optimum magnetic properties did not alter their cytotoxicity or affect osteogenic differentiation of the stem cells. Thus, despite the known cytotoxicity of cobalt and zinc ions, these results suggest that iron oxide nanoparticles can be doped to sufficiently tailor their magnetic properties without compromising cellular biocompatibility.

The cellular magnetic response and biocompatibility of biogenic zinc- and cobalt-doped magnetite nanoparticles

PubMed Central

Moise, Sandhya; Céspedes, Eva; Soukup, Dalibor; Byrne, James M.; El Haj, Alicia J.; Telling, Neil D.

2017-01-01

The magnetic moment and anisotropy of magnetite nanoparticles can be optimised by doping with transition metal cations, enabling their properties to be tuned for different biomedical applications. In this study, we assessed the suitability of bacterially synthesized zinc- and cobalt-doped magnetite nanoparticles for biomedical applications. To do this we measured cellular viability and activity in primary human bone marrow-derived mesenchymal stem cells and human osteosarcoma-derived cells. Using AC susceptibility we studied doping induced changes in the magnetic response of the nanoparticles both as stable aqueous suspensions and when associated with cells. Our findings show that the magnetic response of the particles was altered after cellular interaction with a reduction in their mobility. In particular, the strongest AC susceptibility signal measured in vitro was from cells containing high-moment zinc-doped particles, whilst no signal was observed in cells containing the high-anisotropy cobalt-doped particles. For both particle types we found that the moderate dopant levels required for optimum magnetic properties did not alter their cytotoxicity or affect osteogenic differentiation of the stem cells. Thus, despite the known cytotoxicity of cobalt and zinc ions, these results suggest that iron oxide nanoparticles can be doped to sufficiently tailor their magnetic properties without compromising cellular biocompatibility. PMID:28045082

Electron doping evolution of the magnetic excitations in NaFe 1-xCo xAs

DOE PAGES

Carr, Scott V.; Zhang, Chenglin; Song, Yu; ...

2016-06-13

We use time-of-flight (TOF) inelastic neutron scattering (INS) spectroscopy to investigate the doping dependence of magnetic excitations across the phase diagram of NaFe 1-xCo xAs with x = 0, 0.0175, 0.0215, 0.05, and 0.11. The effect of electron-doping by partially substituting Fe by Co is to form resonances that couple with superconductivity, broaden and suppress low energy (E 80 meV) spin excitations compared with spin waves in undoped NaFeAs. However, high energy (E > 80 meV) spin excitations are weakly Co-doping dependent. Integration of the local spin dynamic susceptibility "(!) of NaFe 1-xCo xAs reveals a total fluctuating moment ofmore » 3.6 μ2 B/Fe and a small but systematic reduction with electron doping. The presence of a large spin gap in the Cooverdoped nonsuperconducting NaFe0.89Co0.11As suggests that Fermi surface nesting is responsible for low-energy spin excitations. These results parallel Ni-doping evolution of spin excitations in BaFe 2-xNi xAs 2, confirming the notion that low-energy spin excitations coupling with itinerant electrons are important for superconductivity, while weakly doping dependent high-energy spin excitations result from localized moments.« less

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

NASA Astrophysics Data System (ADS)

Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

2018-06-01

In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

Superconductivity-insensitive order at q~1/4 in electron doped cuprates

DOE PAGES

Lee, Jun -Sik; Jang, H.; Asano, S.; ...

2017-12-15

One of the central questions in the cuprate research is the nature of the ‘normal state’ which develops into high temperature superconductivity (HTSC). In the normal state of hole-doped cuprates, the existence of charge density wave (CDW) is expected to shed light on the mechanism of HTSC. With evidence emerging for CDW order in the electron-doped cuprates, the CDW would be thought to be a universal phenomenon in high-T c cuprates. However, the CDW phenomena in electron-doped cuprate are quite different than those in hole-doped cuprates. Here we study the nature of the putative CDW in an electron-doped cuprate throughmore » direct comparisons between as-grown and post-annealed Nd 1.86Ce 0.14CuO 4 (NCCO) single crystals using Cu L 3-edge resonant soft x-ray scattering (RSXS) and angleresolved photoemission spectroscopy (ARPES). The RSXS result reveals that the non-superconducting NCCO shows the same reflections at the wavevector (~1/4, 0, l) as like the reported superconducting NCCO. This superconductivity-insensitivesignal is quite different with the characteristics of the CDW reflection in hole-doped cuprates. Moreover, the ARPES result suggests that the fermiology cannot account for such wavevector. Furthermore, these results call into question the universality of CDW phenomenon in the cuprates.« less

Facile preparation of N-doped TiO2 at ambient temperature and pressure under UV light with 4-nitrophenol as the nitrogen source and its photocatalytic activities.

PubMed

Horikoshi, Satoshi; Shirasaka, Yutaro; Uchida, Hiroshi; Horikoshi, Natsuko; Serpone, Nick

2016-08-04

To date syntheses of nitrogen-doped TiO2 photocatalysts (TiO2-xNx) have been carried out under high temperatures and high pressures with either NH3 or urea as the nitrogen sources. This article reports for the first time the facile preparation of N-doped TiO2 (P25 titania) in aqueous media at ambient temperature and pressure under inert conditions (Ar- and N2-purged dispersions) with 4-nitrophenol (or 4-nitrobenzaldehyde) as the nitrogen source. The resulting N-doped P25 TiO2 materials were characterized by UV/Vis and X-ray photoelectron spectroscopies (XPS) that confirmed the presence of nitrogen within the photocatalyst; X-ray diffraction (XRD) techniques confirmed the crystalline phases of the doped material. The photocatalytic activity of N-doped TiO2 was assessed through examining the photodegradation of 4-chlorophenol in aqueous media and iso-propanol as a volatile pollutant under UV/Vis and visible-light irradiation. Under visible light irradiation, undoped P25 was inactive contrary to N-doped P25 that successfully degraded 95% of the 4-chlorophenol (after 10 h) and 23% of iso-propanol (after 2.5 h).

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

NASA Astrophysics Data System (ADS)

Chung, S. J.; Senthil Kumar, M.; Lee, Y. S.; Suh, E.-K.; An, M. H.

2010-05-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Engineering iodine-doped carbon dots as dual-modal probes for fluorescence and X-ray CT imaging.

PubMed

Zhang, Miaomiao; Ju, Huixiang; Zhang, Li; Sun, Mingzhong; Zhou, Zhongwei; Dai, Zhenyu; Zhang, Lirong; Gong, Aihua; Wu, Chaoyao; Du, Fengyi

2015-01-01

X-ray computed tomography (CT) is the most commonly used imaging technique for noninvasive diagnosis of disease. In order to improve tissue specificity and prevent adverse effects, we report the design and synthesis of iodine-doped carbon dots (I-doped CDs) as efficient CT contrast agents and fluorescence probe by a facile bottom-up hydrothermal carbonization process. The as-prepared I-doped CDs are monodispersed spherical nanoparticles (a diameter of ~2.7 nm) with favorable dispersibility and colloidal stability in water. The aqueous solution of I-doped CDs showed wavelength-dependent excitation and stable photoluminescence similar to traditional carbon quantum dots. Importantly, I-doped CDs displayed superior X-ray attenuation properties in vitro and excellent biocompatibility. After intravenous injection, I-doped CDs were distributed throughout the body and excreted by renal clearance. These findings validated that I-doped CDs with high X-ray attenuation potency and favorable photoluminescence show great promise for biomedical research and disease diagnosis.

Engineering iodine-doped carbon dots as dual-modal probes for fluorescence and X-ray CT imaging

PubMed Central

Zhang, Miaomiao; Ju, Huixiang; Zhang, Li; Sun, Mingzhong; Zhou, Zhongwei; Dai, Zhenyu; Zhang, Lirong; Gong, Aihua; Wu, Chaoyao; Du, Fengyi

2015-01-01

X-ray computed tomography (CT) is the most commonly used imaging technique for noninvasive diagnosis of disease. In order to improve tissue specificity and prevent adverse effects, we report the design and synthesis of iodine-doped carbon dots (I-doped CDs) as efficient CT contrast agents and fluorescence probe by a facile bottom-up hydrothermal carbonization process. The as-prepared I-doped CDs are monodispersed spherical nanoparticles (a diameter of ~2.7 nm) with favorable dispersibility and colloidal stability in water. The aqueous solution of I-doped CDs showed wavelength-dependent excitation and stable photoluminescence similar to traditional carbon quantum dots. Importantly, I-doped CDs displayed superior X-ray attenuation properties in vitro and excellent biocompatibility. After intravenous injection, I-doped CDs were distributed throughout the body and excreted by renal clearance. These findings validated that I-doped CDs with high X-ray attenuation potency and favorable photoluminescence show great promise for biomedical research and disease diagnosis. PMID:26609232

Doping effect on monolayer MoS2 for visible light dye degradation - A DFT study

NASA Astrophysics Data System (ADS)

Cheriyan, Silpa; Balamurgan, D.; Sriram, S.

2018-04-01

The electronic and optical properties of, Nitrogen (N), Cobalt (Co), and Co-N co-doped monolayers of MoS2 has been studied by using density functional theory (DFT) for visible light photocatalytic activity. From the calculations, it has been observed that the band gap of monolayer MoS2 has been reduced while doping. However, the band gaps of pristine and N doped MoS2 monolayers only falls in the visible region while for Co and Co-N co-doped systems, the band gap shifted to IR region. The optical calculation also confirms the results. The formation energy values of the doped system reaveal that MoS2 monolayer drops its stability while doping. To evaluate the photocatalytic response, band edge potentials of pristine and N-MoS2 are calculated, and the observed results show that compared to N-doped MoS2 monolayer, pure MoS2 is highly suitable for visible light photocatalytic dye degradation.

Selective Detection of NO2 Using Cr-Doped CuO Nanorods

PubMed Central

Kim, Kang-Min; Jeong, Hyun-Mook; Kim, Hae-Ryong; Choi, Kwon-Il; Kim, Hyo-Joong; Lee, Jong-Heun

2012-01-01

CuO nanosheets, Cr-doped CuO nanosheets, and Cr-doped CuO nanorods were prepared by heating a slurry containing Cu-hydroxide/Cr-hydroxide. Their responses to 100 ppm NO2, C2H5OH, NH3, trimethylamine, C3H8, and CO were measured. For 2.2 at% Cr-doped CuO nanorods, the response (Ra/Rg, Ra: resistance in air, Rg: resistance in gas) to 100 ppm NO2 was 134.2 at 250 °C, which was significantly higher than that of pure CuO nano-sheets (Ra/Rg = 7.5) and 0.76 at% Cr-doped CuO nanosheets (Ra/Rg = 19.9). In addition, the sensitivity for NO2 was also markedly enhanced by Cr doping. Highly sensitive and selective detection of NO2 in 2.2 at% Cr-doped CuO nanorods is explained in relation to Cr-doping induced changes in donor density, morphology, and catalytic effects. PMID:22969384

Effect of Li and NH4 doping on the crystal perfection, second harmonic generation efficiency and laser damage threshold of potassium pentaborate crystals

NASA Astrophysics Data System (ADS)

Vigneshwaran, A. N.; Kalainathan, S.; Raja, C. Ramachandra

2018-03-01

Potassium pentaborate (KB5) is an excellent nonlinear optical material especially in the UV region. In this work, Li and NH4 doped KB5 crystals were grown using slow evaporation solution growth method. The incorporation of dopant has been confirmed and analysed by Energy dispersive X-ray analysis (EDAX), Inductively coupled plasma (ICP) analysis and Raman spectroscopy. The crystalline perfection of pure and doped KB5 crystals was studied by High resolution X-ray diffraction (HRXRD) analysis. Structural grain boundaries were observed in doped crystals. Second harmonic generation was confirmed for pure and doped crystals and output values revealed the enhancement of SHG efficiency in doped crystals. Resistance against laser damage was carried out using 1064 nm Nd-YAG laser of pulse width 10 ns. The laser damage threshold value is increased in Li doped crystal and decreased in NH4 doped crystal when compared to pure KB5 crystal.

Review on dielectric properties of rare earth doped barium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ismail, Fatin Adila, E-mail: fatinadilaismail@gmail.com; Osman, Rozana Aina Maulat, E-mail: rozana@unimap.edu.my; Frontier Materials Research, Seriab, 01000 Kangar, Perlis

2016-07-19

Rare earth doped Barium Titanate (BaTiO{sub 3}) were studied due to high permittivity, excellent electrical properties and have wide usage in various applications. This paper reviewed on the electrical properties of RE doped BaTiO{sub 3} (RE: Lanthanum (La), Erbium (Er), Samarium (Sm), Neodymium (Nd), Cerium (Ce)), processing method, phase transition occurred and solid solution range for complete study. Most of the RE doped BaTiO{sub 3} downshifted the Curie temperature (T{sub C}). Transition temperature also known as Curie temperature, T{sub C} where the ceramics had a transition from ferroelectric to a paraelectric phase. In this review, the dielectric constant of La-dopedmore » BaTiO{sub 3}, Er-doped BaTiO{sub 3}, Sm-doped BaTiO{sub 3}, Nd-doped BaTiO{sub 3} and Ce-doped BaTiO{sub 3} had been proved to increase and the transition temperature or also known as T{sub C} also lowered down to room temperature as for all the RE doped BaTiO{sub 3} except for Er-doped BaTiO{sub 3}.« less

Sonocatalytic degradation of azo fuchsine in the presence of the Co-doped and Cr-doped mixed crystal TiO2 powders and comparison of their sonocatalytic activities.

PubMed

Wang, Jun; Lv, Yanhui; Zhang, Zhaohong; Deng, Yingqiao; Zhang, Liquan; Liu, Bin; Xu, Rui; Zhang, Xiangdong

2009-10-15

In order to degrade some pollutants effectively under ultrasonic irradiation, the Co-doped and Cr-doped mixed crystal TiO(2) powders, with high sonocatalytic activity, were prepared as sonocatalyst. The Co-doped and Cr-doped mixed crystal TiO(2) powders as sonocatalyst were prepared through sol-gel and heat-treated methods from tetrabutylorthotitanate, and then were characterized by XRD and TG-DTA technologies. In order to compare and evaluate the sonocatalytic activity of the Co-doped and Cr-doped mixed crystal TiO(2) powders, the low power ultrasound was as an irradiation source and the azo fuchsine was chosen as a model compound to be degraded. The degradation process was investigated by UV-vis, TOC, ion chromatogram and HPLC techniques. The results indicated that the sonocatalytic activity of Cr-doped mixed crystal TiO(2) powder was higher than that of Co-doped and undoped mixed crystal TiO(2) powder during the sonocatalytic degradation of the azo fuchsine in aqueous solution. These results may be of great significance for driving sonocatalytic method to treat non- or low-transparent industrial wastewaters.

Health Psychological Constructs as Predictors of Doping Susceptibility in Adolescent Athletes

PubMed Central

Blank, Cornelia; Schobersberger, Wolfgang; Leichtfried, Veronika; Duschek, Stefan

2016-01-01

Background Doping is a highly relevant problem in sport, even in adolescent athletes. Knowledge of the psychological factors that influence doping susceptibility in young elite athletes remains sparse. Objectives This study investigated the predictive potential of different health-psychological constructs and well-being on doping susceptibility. The main hypotheses to be tested were positive associations of fear of failure, external locus of control, and ego-oriented goal orientation as well as negative associations of confidence of success, task orientation, internal locus of control, and performance motivation with doping susceptibility. Low levels of well-being are furthermore expected to be associated with doping susceptibility. Methods Within this cross-sectional study, 1,265 Austrian junior athletes aged between 14 and 19 years responded to a paper-pencil questionnaire. Results Performance motivation was a negative, while depressive mood, self-esteem, fear of failure and ego-oriented goal orientation were positive predictors of doping susceptibility. In addition, participants who were offered performance enhancing substances in the past were particularly susceptible to doping. Conclusions The study corroborates the predictive value of classical psychological constructs in doping research, initially analyzed in view of adult athletes, also for adolescents’ doping susceptibility. PMID:28144408

Fabrication of a dye-doped liquid crystal light shutter by thermal curing of polymer

NASA Astrophysics Data System (ADS)

Yu, Byeong-Hun; Ji, Seong-Min; Kim, Jin-Hun; Huh, Jae-Won; Yoon, Tae-Hoon

2017-07-01

We report a thermal curing method for fabrication of a dye-doped polymer-stabilized liquid crystal (PSLC) light shutter, which can prevent the decrease in absorption and discoloration of the dye caused by the UV curing process. We found that the measured transmittance in the opaque state of a dye-doped PSLC cell fabricated by thermal curing was approximately 35% lower than that of a dye-doped PSLC cell fabricated by UV curing. Thermal curing can be an alternative approach for fabrication of a dye-doped PSLC light shutter which can be used to provide high visibility of a see-through display.

Negative Dielectric Constant Material Based on Ion Conducting Materials

NASA Technical Reports Server (NTRS)

Gordon, Keith L. (Inventor); Kang, Jin Ho (Inventor); Park, Cheol (Inventor); Lillehei, Peter T. (Inventor); Harrison, Joycelyn S. (Inventor)

2017-01-01

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Negative Dielectric Constant Material Based on Ion Conducting Materials

NASA Technical Reports Server (NTRS)

Gordon, Keith L. (Inventor); Kang, Jin Ho (Inventor); Harrison, Joycelyn S. (Inventor); Park, Cheol (Inventor); Lillehei, Peter T. (Inventor)

2014-01-01

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly(benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Compensating vacancy defects in Sn- and Mg-doped In2O3

NASA Astrophysics Data System (ADS)

Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; Galazka, Z.

2014-12-01

MBE-grown Sn- and Mg-doped epitaxial In2O3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In2O3 , however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.

Carrier-doped aromatic hydrocarbons: a new platform in condensed matter chemistry and physics.

PubMed

Heguri, Satoshi; Tanigaki, Katsumi

2018-02-27

High-quality bulk samples of the first four polyacenes, which are naphthalene, anthracene, tetracene, and pentacene, doped with alkali metal in 1 : 1 and 1 : 2 stoichiometries were prepared and their fundamental properties were systematically studied. A new systematic understanding on the electronic states of electron-doped polyacenes sensitive to the energetic balance among on-site Coulomb repulsion, bandwidth and the Peierls instability was provided. The carrier-doped typical aromatic hydrocarbons showed a large variety of properties as well as charge transfer complexes and metal-doped fullerides. We open a new avenue for organometallic and inorganic chemistry.

Observation of ferromagnetism in Mn doped KNbO3

NASA Astrophysics Data System (ADS)

Manikandan, M.; Venkateswaran, C.

2015-06-01

Pure and Mn doped KNbO3 have been prepared by ball milling assisted ceramic method. Mn ion had been doped at Nb site to induce ferromagnetism at room temperature. X-ray diffraction (XRD) patterns reveal the formation of orthorhombic phase. High resolution scanning electron micrograph (HR-SEM) of both pure and Mn doped samples show a mixture of spherical and plate like particles. Room temperature magnetic behavior of both the samples were analyzed using vibrating sample magnetometer (VSM). 5% Mn doped KNbO3 exhibits ferromagnetic behavior. Observed ferromagnetic feature has been explained by interactions between bound magnetic polarons which are created by Mn4+ ions.

Interaction of solid organic acids with carbon nanotube field effect transistors

NASA Astrophysics Data System (ADS)

Klinke, Christian; Afzali, Ali; Avouris, Phaedon

2006-10-01

A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage and making carbon nanotube field effect transistors to be more p-type devices. Weaker acids like phosphonic or hydroxamic acids had less effect. The doping of the devices was accompanied by a reduction of the hysteresis in the transfer characteristics. In-solution doping survives standard fabrication processes and renders p-doped carbon nanotube field effect transistors with good transport characteristics.

P-Compensated and P-Doped Superlattice Infrared Detectors

NASA Technical Reports Server (NTRS)

Khoshakhlagh, Arezou (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

2017-01-01

Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of.about.10.mu.m.

Scanning Tunneling Microscopy/Spectroscopy study on Optimally Potassium Doped Single Crystal BaFe2 As 2

NASA Astrophysics Data System (ADS)

Ma, Jihua; Li, Ang; Zhang, Chenglin; Dai, Pengcheng; Pan, Shuheng

2011-03-01

The iron pnictide parent compound material can be brought into superconducting state by chemical doping. It is worthwhile to study and compare the hole- and electron-doped iron pnictides. Among the well-known family of AEFe 2 As 2 (AE=Ca, Sr, Ba), the scanning tunneling microscopy/spectroscopy study on hole-doped samples is insufficient. In this talk we will present high resolution STM/STS results on (001) surface of the optimally doped single crystal Ba 0.6 K0.4 Fe 2 As 2 (Tc ~ 37 K). With the data we will discuss the spatial variation of the superconducting energy gap.

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

NASA Astrophysics Data System (ADS)

Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

2013-03-01

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

Sulfur-doped graphene via thermal exfoliation of graphite oxide in H2S, SO2, or CS2 gas.

PubMed

Poh, Hwee Ling; Šimek, Petr; Sofer, Zdeněk; Pumera, Martin

2013-06-25

Doping of graphene with heteroatoms is an effective way to tailor its properties. Here we describe a simple and scalable method of doping graphene lattice with sulfur atoms during the thermal exfoliation process of graphite oxides. The graphite oxides were first prepared by Staudenmaier, Hofmann, and Hummers methods followed by treatments in hydrogen sulfide, sulfur dioxide, or carbon disulfide. The doped materials were characterized by scanning electron microscopy, high-resolution X-ray photoelectron spectroscopy, combustible elemental analysis, and Raman spectroscopy. The ζ-potential and conductivity of sulfur-doped graphenes were also investigated in this paper. It was found that the level of doping is more dramatically influenced by the type of graphite oxide used rather than the type of sulfur-containing gas used during exfoliation. Resulting sulfur-doped graphenes act as metal-free electrocatalysts for an oxygen reduction reaction.

Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

NASA Astrophysics Data System (ADS)

Wang, Jin-Liang; Wu, Er-Xing

2007-03-01

The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si:H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H6 doped samples, where the films change from nanocrystalline to amorphous.

Structural and AC loss study for pure and doped MgB{sub 2} superconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hansdah, J. S.; Sarun, P. M., E-mail: sarun.res@gmail.com

2015-06-24

Superconducting polycrystalline bulk MgB{sub 2} samples doped with n-C, n-Y{sub 2}O{sub 3} and n-Ho{sub 2}O{sub 3} were prepared by powder-in-sealed (PIST) method. XRD measurement shows the influence of dopants on phase and lattice parameters of samples. The ac susceptibility measurement reveals ac loss and activation energy of the samples. Nano-C doped sample shows less ac loss in all frequency (208 Hz – 999 Hz) among the doped samples; whereas n-Ho{sub 2}O{sub 3} doped sample shows highest ac loss. The activation energy is high for rare earth (n-Y{sub 2}O{sub 3} and n-Ho{sub 2}O{sub 3}) doped samples as compare to n-C doped samples whichmore » reveals the enhancement in flux-pinning properties of these materials.« less

A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

NASA Astrophysics Data System (ADS)

Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

2018-05-01

Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

A DFT investigation on group 8B transition metal-doped silicon carbide nanotubes for hydrogen storage application

NASA Astrophysics Data System (ADS)

Tabtimsai, Chanukorn; Ruangpornvisuti, Vithaya; Tontapha, Sarawut; Wanno, Banchob

2018-05-01

The binding of group 8B transition metal (TMs) on silicon carbide nanotubes (SiCNT) hydrogenated edges and the adsorption of hydrogen molecule on the pristine and TM-doped SiCNTs were investigated using the density functional theory method. The B3LYP/LanL2DZ method was employed in all calculations for the considered structural, adsorption, and electronic properties. The Os atom doping on the SiCNT is found to be the strongest binding. The hydrogen molecule displays a weak interaction with pristine SiCNT, whereas it has a strong interaction with TM-doped SiCNTs in which the Os-doped SiCNT shows the strongest interaction with the hydrogen molecule. The improvement in the adsorption abilities of hydrogen molecule onto TM-doped SiCNTs is due to the protruding structure and the induced charge transfer between TM-doped SiCNT and hydrogen molecule. These observations point out that TM-doped SiCNTs are highly sensitive toward hydrogen molecule. Moreover, the adsorptions of 2-5 hydrogen molecules on TM-doped SiCNT were also investigated. The maximum storage number of hydrogen molecules adsorbed on the first layer of TM-doped SiCNTs is 3 hydrogen molecules. Therefore, TM-doped SiCNTs are suitable to be sensing and storage materials for hydrogen gas.

One-step electrochemical synthesis of nitrogen and sulfur co-doped, high-quality graphene oxide.

PubMed

Parvez, Khaled; Rincón, Rosalba A; Weber, Nils-Eike; Cha, Kitty C; Venkataraman, Shyam S

2016-04-28

High-quality graphene oxide (GO) with high crystallinity and electrical conductivity as well as in situ doped with nitrogen and sulfur is obtained via the electrochemical exfoliation of graphite. Furthermore, iron incorporated GO sheets show promising catalytic activity and stable methanol tolerance durability when used as electrocatalysts for the oxygen reduction reaction.

White polymeric light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Niu, Xiaodi; Ma, Liang; Yao, Bing; Ding, Junqiao; Tu, Guoli; Xie, Zhiyuan; Wang, Lixiang

2006-11-01

The efficient white polymeric light-emitting diodes based on a white emissive polymer doped with a red phosphorescent dopant were fabricated by spin-coating method. The emission spectrum of the device is broadened to cover the full visible region by doping the red phosphorescent dye and thereby realizes white emission with high color-rendering index (CRI). By controlling the contents of the doped electron-transporting 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole and the red phosphorescent dopant, a luminous efficiency as high as 5.3cd/A and a power efficiency of 3lm/W were obtained with a CRI of 92.

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

PubMed Central

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-01-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W. PMID:27811994

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals.

PubMed

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-04

The spectral properties and laser performance of Er:SrF 2 single crystals were investigated and compared with Er:CaF 2 . Er:SrF 2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er 3+ : 4 I 11/2 level) than those of Er:CaF 2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF 2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF 2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

NASA Astrophysics Data System (ADS)

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Superconducting and normal-state anisotropy of the doped topological insulator Sr 0.1Bi 2Se 3

DOE PAGES

Smylie, M. P.; Willa, K.; Claus, H.; ...

2018-05-16

Sr xBi 2Se 3 and the related compounds Cu xBi 2Se 3 and Nb xBi 2Se 3 have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with T c ~3 K in Sr xBi 2Se 3 arises upon intercalation of Sr into the layered topological insulator Bi 2Se 3. Here we elucidate the anisotropy of the normal and superconducting state of Sr 0.1Bi 2Se 3 with angular dependent magnetotransport and thermodynamic measurements. High resolution x-ray diffraction studies underline the high crystalline quality of the samples. We demonstrate that the normal state electronic and magneticmore » properties of Sr 0.1Bi 2Se 3 are isotropic in the basal plane while we observe a large two-fold in-plane anisotropy of the upper critical field in the superconducting state. In conclusion, our results support the recently proposed odd-parity nematic state characterized by a nodal gap of Eu symmetry in Sr xBi 2Se 3.« less

Superconducting and normal-state anisotropy of the doped topological insulator Sr 0.1Bi 2Se 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smylie, M. P.; Willa, K.; Claus, H.

Sr xBi 2Se 3 and the related compounds Cu xBi 2Se 3 and Nb xBi 2Se 3 have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with T c ~3 K in Sr xBi 2Se 3 arises upon intercalation of Sr into the layered topological insulator Bi 2Se 3. Here we elucidate the anisotropy of the normal and superconducting state of Sr 0.1Bi 2Se 3 with angular dependent magnetotransport and thermodynamic measurements. High resolution x-ray diffraction studies underline the high crystalline quality of the samples. We demonstrate that the normal state electronic and magneticmore » properties of Sr 0.1Bi 2Se 3 are isotropic in the basal plane while we observe a large two-fold in-plane anisotropy of the upper critical field in the superconducting state. In conclusion, our results support the recently proposed odd-parity nematic state characterized by a nodal gap of Eu symmetry in Sr xBi 2Se 3.« less

High field superconducting properties of Ba(Fe1-xCox)2As2 thin films

NASA Astrophysics Data System (ADS)

Hänisch, Jens; Iida, Kazumasa; Kurth, Fritz; Reich, Elke; Tarantini, Chiara; Jaroszynski, Jan; Förster, Tobias; Fuchs, Günther; Hühne, Ruben; Grinenko, Vadim; Schultz, Ludwig; Holzapfel, Bernhard

2015-11-01

In general, the critical current density, Jc, of type II superconductors and its anisotropy with respect to magnetic field orientation is determined by intrinsic and extrinsic properties. The Fe-based superconductors of the ‘122’ family with their moderate electronic anisotropies and high yet accessible critical fields (Hc2 and Hirr) are a good model system to study this interplay. In this paper, we explore the vortex matter of optimally Co-doped BaFe2As2 thin films with extended planar and c-axis correlated defects. The temperature and angular dependence of the upper critical field is well explained by a two-band model in the clean limit. The dirty band scenario, however, cannot be ruled out completely. Above the irreversibility field, the flux motion is thermally activated, where the activation energy U0 is going to zero at the extrapolated zero-kelvin Hirr value. The anisotropy of the critical current density Jc is both influenced by the Hc2 anisotropy (and therefore by multi-band effects) as well as the extended planar and columnar defects present in the sample.

Superconducting and normal-state anisotropy of the doped topological insulator Sr0.1Bi2Se3.

PubMed

Smylie, M P; Willa, K; Claus, H; Koshelev, A E; Song, K W; Kwok, W-K; Islam, Z; Gu, G D; Schneeloch, J A; Zhong, R D; Welp, U

2018-05-16

Sr x Bi 2 Se 3 and the related compounds Cu x Bi 2 Se 3 and Nb x Bi 2 Se 3 have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with T c  ~3 K in Sr x Bi 2 Se 3 arises upon intercalation of Sr into the layered topological insulator Bi 2 Se 3 . Here we elucidate the anisotropy of the normal and superconducting state of Sr 0.1 Bi 2 Se 3 with angular dependent magnetotransport and thermodynamic measurements. High resolution x-ray diffraction studies underline the high crystalline quality of the samples. We demonstrate that the normal state electronic and magnetic properties of Sr 0.1 Bi 2 Se 3 are isotropic in the basal plane while we observe a large two-fold in-plane anisotropy of the upper critical field in the superconducting state. Our results support the recently proposed odd-parity nematic state characterized by a nodal gap of Eu symmetry in Sr x Bi 2 Se 3 .