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Sample records for doped layer final

  1. Diagnosis of core-shell mixing with absorption and emission spectra of a doped layer. Final technical report

    SciTech Connect

    1998-05-01

    We carried out the proposed program as planned. The research work has resulted in several publications, see attachments. The objective of this proposal was to develop a diagnostic method for core-shell mixing, based on the observation of absorption and emission lines of a doped layer, embedded within the shell, and correlate these signatures with nuclear signatures of target performance. We showed the results of a numerical analysis applied to a particular doped target imploded on the OMEGA system as a feasibility demonstration.

  2. Diagnosis of core-shell mixing with absorption and emission spectra of a doped layer. Final technical report

    SciTech Connect

    1998-04-01

    Shell-core mixing which can occur during the deceleration phase of laser-driven implosion is believed to be the major limitation on target performance. The authors proposed a diagnostic method for detecting core-shell mixing based on the comparison of absorption and emission spectra due to a signature layer embedded in the target shell. Experimentally the method is simple as it does not require backlighting nor imaging. They have developed a mixing and radiation transport model used here to demonstrate the proposed diagnostic method. The proposal consists of target experiments on OMEGA as well as the interpretation and analysis of these experiments. They show that a signature layer of a high-Z dopant can be placed within the shell such that, in the absence of mixing, the emergent spectrum will only show absorption lines (of L-shell ionic species). Mixing causes the appearance of K-shell lines in emission. The more severe the mixing, the higher is the intensity of emission lines, as compared with that of the absorption lines. Modeling results are presented to demonstrate a numerical analysis of doped target experiments carried out on OMEGA.

  3. Organic doping of rotated double layer graphene

    SciTech Connect

    George, Lijin; Jaiswal, Manu

    2016-05-06

    Charge transfer techniques have been extensively used as knobs to tune electronic properties of two- dimensional systems, such as, for the modulation of conductivity \\ mobility of single layer graphene and for opening the bandgap in bilayer graphene. The charge injected into the graphene layer shifts the Fermi level away from the minimum density of states point (Dirac point). In this work, we study charge transfer in rotated double-layer graphene achieved by the use of organic dopant, Tetracyanoquinodimethane. Naturally occurring bilayer graphene has a well-defined A-B stacking whereas in rotated double-layer the two graphene layers are randomly stacked with different rotational angles. This rotation is expected to significantly alter the interlayer interaction. Double-layer samples are prepared using layer-by-layer assembly of chemical vapor deposited single-layer graphene and they are identified by characteristic resonance in the Raman spectrum. The charge transfer and distribution of charges between the two graphene layers is studied using Raman spectroscopy and the results are compared with that for single-layer and A-B stacked bilayer graphene doped under identical conditions.

  4. Highly doped layer for tunnel junctions in solar cells

    DOEpatents

    Fetzer, Christopher M.

    2017-08-01

    A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

  5. Silver doped metal layers for medical applications

    NASA Astrophysics Data System (ADS)

    Kocourek, T.; Jelínek, M.; Mikšovský, J.; Jurek, K.; Weiserová, M.

    2014-04-01

    Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 at% to 4.32 at% for steel and from 3.04 at% to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficacy (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using scratch test. The antibacterial efficacy changed with silver doping up to 99.9 %. Our investigation was focused on minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.

  6. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

    PubMed Central

    Sakic, Agata; Scholtes, Tom L. M.; de Boer, Wiebe; Golshani, Negin; Derakhshandeh, Jaber; Nanver, Lis K.

    2011-01-01

    An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017 cm−3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm2 anode area. PMID:28824126

  7. Calcium-doped ceria/titanate tabular functional nanocomposite by layer-by-layer coating method

    SciTech Connect

    Liu, Xiang W.; Devaraju, M.K.; Yin, Shu; Sato, Tsugio

    2010-07-15

    Ca-doped ceria (CDC)/tabular titanate (K{sub 0.8}Li{sub 0.27}Ti{sub 1.73}O{sub 4}, TT) UV-shielding functional nanocomposite with fairly uniform CDC coating layers was prepared through a polyelectrolyte-associated layer-by-layer (LbL) coating method. TT with lepidocrocite-like layered structure was used as the substrate, poly (diallyldimethylammonium chloride) (PDDA) was used as a coupling agent, CDC nanoparticles were used as the main UV-shielding component. CDC/TT nanocomposites with various coating layers of CDC were obtained through a multistep coating process. The phases were studied by X-ray diffraction. The morphology and coating quality were studied by scanning electron microscopy and element mapping of energy dispersive X-ray analysis. The oxidation catalytic activity, UV-shielding ability and using comfort were characterized by Rancimat test, UV-vis spectra and dynamic friction test, respectively. CDC/TT nanocomposites with low oxidation catalytic activity, high UV-shielding ability and good using comfort were finally obtained. - Graphical abstract: Through the control of surface charge of particles calcium-doped ceria/titanate composites with low oxidation catalytic activity, higher UV-shielding ability and excellent comfort was obtained by a facile layer-by-layer coating method.

  8. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  9. Doped zinc oxide window layers for dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Kumar, Vinod; Singh, Neetu; Kumar, Vijay; Purohit, L. P.; Kapoor, Avinashi; Ntwaeaborwa, Odireleng M.; Swart, Hendrik C.

    2013-10-01

    The present paper reports the fabrication of dye sensitized solar cell (DSSC), where boron doped ZnO (BZO) and aluminum-boron co-doped ZnO (AZB) thin films were used as front window electrodes. The highly crystalline zinc oxide (ZnO) nanoparticles (NPs) synthesized by the sol-gel route were used as host material for the dye. The efficiencies of the DSSCs formed using the BZO and AZB as window layers were obtained to be 1.56 and 1.84%, respectively. The enhanced efficiency in the case of an AZB window layer based DSSC is attributed to the increase in conductivity induced by co-doping of Al and B and an increase in the number of conducting pathways between the window layer and NPs provided by the nanorods. This facilitates a new approach in the window layer (doped ZnO) for DSSC application.

  10. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm‑2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm‑3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm‑3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ∼0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ∼2 × 1019 cm‑3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  11. Raman spectroscopic study of chemically-doped few layer graphenes

    NASA Astrophysics Data System (ADS)

    Tan, Pingheng; Zhao, Weijie; Zhang, Jun; Liu, Jian

    2011-03-01

    Graphene, the latest carbon allotrope discovered at 2004, has attracted intensively scientific interest owing to its distinctive properties. Chemical doping is expected to substantially increase the density of free charge carriers by charge transfer and to modify the Fermi level of doped materials. Here, we investigated charge transfer and optical phonon mixing in few layer graphenes in detail by utilizing sulfuric acid as an electron-acceptor dopant. Sulfuric acid molecules are found to be only physically adsorbed on the surface layers of graphenes and no intercalation happens. The top and bottom layers of bilayer graphenes can be intentionally doped differently by concentrated sulfuric acid. The difference of hole doping between the top and bottom layers results in phonon mixing of symmetric and antisymmetric modes in bilayer graphenes. The Raman frequency evolution with the doping level qualitatively agrees with recent ab initio theoretical calculations. Sulfuric acid molecules can be expected as a stable electron-acceptor dopant for graphenes to study the physical properties of few layer graphenes at different doping levels.

  12. Nanoscale imaging of freestanding nitrogen doped single layer graphene.

    PubMed

    Iyer, Ganjigunte R S; Wang, Jian; Wells, Garth; Bradley, Michael P; Borondics, Ferenc

    2015-02-14

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.

  13. Doped LZO buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  14. Nanoscale imaging of freestanding nitrogen doped single layer graphene

    NASA Astrophysics Data System (ADS)

    Iyer, Ganjigunte R. S.; Wang, Jian; Wells, Garth; Bradley, Michael P.; Borondics, Ferenc

    2015-01-01

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05385k

  15. Growth Of Delta-Doped Layer On Silicon CCD

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, Robert W.; Hecht, Michael H.

    1995-01-01

    Response to ultraviolet light enhanced. Back-side-illuminated silicon charge-coupled device fabricated exhibiting nearly 100 percent internal quantum efficiency in near ultraviolet, by using molecular beam epitaxy to grow thin crystalline-silicon layer containing high concentration of boron (p-type dopant). By confining dopant atoms to one or few atomic layers in silicon lattice, concentration-vs.-depth profile made to resemble Dirac delta function, and resulting silicon layer said to be "delta-doped."

  16. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  17. Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power

    NASA Astrophysics Data System (ADS)

    Hong, Sung Ju; Park, Min; Kang, Hojin; Lee, Minwoo; Soler-Delgado, David; Shin, Dong Seok; Kim, Kyung Ho; Kubatkin, Sergey; Jeong, Dae Hong; Park, Yung Woo; Kim, Byung Hoon

    2015-04-01

    We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

  18. Verification of electron doping in single-layer graphene due to H{sub 2} exposure with thermoelectric power

    SciTech Connect

    Hong, Sung Ju; Kang, Hojin; Soler-Delgado, David; Kim, Kyung Ho; Park, Yung Woo E-mail: kbh37@incheon.ac.kr; Park, Min; Lee, Minwoo; Jeong, Dae Hong; Shin, Dong Seok; Kim, Byung Hoon E-mail: kbh37@incheon.ac.kr; Kubatkin, Sergey

    2015-04-06

    We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H{sub 2} molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

  19. Unexpected strong magnetism of Cu doped single-layer MoS₂ and its origin.

    PubMed

    Yun, Won Seok; Lee, J D

    2014-05-21

    The magnetism of the 3d transition-metal (TM) doped single-layer (1L) MoS2, where the Mo atom is partially replaced by the 3d TM atom, is investigated using the first-principles density functional calculations. In a series of 3d TM doped 1L-MoS2's, the induced spin polarizations are negligible for Sc, Ti, and Cr dopings, while the induced spin polarizations are confirmed for V, Mn, Fe, Co, Ni, Cu, and Zn dopings and the systems become magnetic. Especially, the Cu doped system shows unexpectedly strong magnetism although Cu is nonmagnetic in its bulk state. The driving force is found to be a strong hybridization between Cu 3d states and 3p states of neighboring S, which results in an extreme unbalanced spin-population in the spin-split impurity bands near the Fermi level. Finally, we also discuss further issues of the Cu induced magnetism of 1L-MoS2 such as investigation of additional charge states, the Cu doping at the S site instead of the Mo site, and the Cu adatom on the layer (i.e., 1L-MoS2).

  20. Fabrication of Si:P delta-doped layers with varying doping densities

    NASA Astrophysics Data System (ADS)

    Lim, Tingbin; Villis, Byron; Patil, Samadhan; Schofield, Steven; Curson, Neil; Aeppli, Gabriel; Compasss Team

    2014-03-01

    We are developing a programme to fabricate atomic scale device structures of phosphorus atoms in a silicon substrate. The first step in this process is the fabrication of 2D Si:P delta-doped layers in silicon, which have recently also been theoretically studied in terms of electrical transport by Hwang and Das Sarma (E. H. Hwang and S. Das Sarma, Phys. Rev. B, 87, 125411). The Si:P delta-doped layers are expected to exhibit interesting behaviors when the density of the P atom doping is varied through the metal-insulator transition, as well as for the high (~ 1014 per cm2) and low (below 1013) doping regimes. We are fabricating Si:P delta-doped layers of varying densities from around 6 x 1012 to 2 x 1014 P atoms per cm2, which we will use to experimentally assess the theoretical findings of Hwang and Das Sarma. Details of the fabrication process will also be discussed. Coherent Optical and Microwave Physics for Atomic-Scale Spintronics in Silicon (COMPASSS).

  1. Silver-doped metal layers for medical applications

    NASA Astrophysics Data System (ADS)

    Kocourek, T.; Jelínek, M.; Mikšovský, J.; Jurek, K.; Weiserová, M.

    2014-08-01

    Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316 L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 to 4.32 at% for steel and from 3.04 to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficiency (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using a scratch test. The antibacterial efficiency changed with silver doping up to 99.9 %. Our investigation was focused on the minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.

  2. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer

    PubMed Central

    Ciobanu, C. S.; Groza, A.; Iconaru, S. L.; Popa, C. L.; Chapon, P.; Chifiriuc, M. C.; Hristu, R.; Stanciu, G. A.; Negrila, C. C.; Ghita, R. V.; Ganciu, M.; Predoi, D.

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC—American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  3. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer.

    PubMed

    Ciobanu, C S; Groza, A; Iconaru, S L; Popa, C L; Chapon, P; Chifiriuc, M C; Hristu, R; Stanciu, G A; Negrila, C C; Ghita, R V; Ganciu, M; Predoi, D

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC-American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells.

  4. Multi-layer model vs. single-layer model for N and P doped poly layers in etch bias modeling

    NASA Astrophysics Data System (ADS)

    Li, Jianliang; Vidal-Russell, Ezequiel; Beale, Daniel; Wang, Chunqing; Melvin, Lawrence S., III

    2010-09-01

    In modern photolithography, ever smaller critical dimension (CD) budgets require tighter control over the entire process, demanding more accurate practice of optical proximity correction (OPC). In last decade, the model based OPC (MBOPC) has outpaced the rule based OPC (RBOPC) and become widely adopted in semiconductor industry. During the MBOPC process, the physical models are called to compute the signal values at the evaluation points and the design patterns are perturbed such that the final model contours are as close to the targets as possible. It has been demonstrated that in addition to simulating the optics and resist effects, the physical models must accommodate the pattern distortion due to etch process as well. While the etch process may be lumped with optics and resist processes into one model for the 65nm and above nodes, it can no longer be treated as small perturbations on photolithographic effects for more advanced nodes and it is highly desired to build a physics-based etch model formulations that differ from the conventional convolution-based process models used to simulate the optical and resist effect. Our previous studies proposed a novel non-linear etch modeling object in combination with conventional convolution kernels, which simulates the non-optics and non-resist proximity effect successfully. This study examines further the non-linear etch modeling method by checking the different behaviors of N and p doped layers which physically have different etching rates and should be represented differently in etch modeling. The experimental results indicate that the fitting accuracy is significantly improved when the data points are split into N and P groups and calibrated separately. The N and P layer etch models are used in staged MBOPCs and the results are compared with single-layer model as well.

  5. Adhesion of oxide layer to metal-doped aluminum hydride surface: Density functional calculations

    NASA Astrophysics Data System (ADS)

    Takezawa, Tomoki; Itoi, Junichi; Kannan, Takashi

    2017-07-01

    The density functional theory (DFT) calculations were carried out to evaluate the adhesion energy of the oxide layer to the metal-doped surface of hydrogen storage material, aluminum hydride (alane, AlH3). The total energy calculations using slab model revealed that the surface doping of some metals to aluminum hydride weakens the adhesion strength of the oxide layer. The influence of titanium, iron, cobalt, and zirconium doping on adhesion strength were evaluated. Except for iron doping, the adhesion strength becomes weak by the doping.

  6. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    NASA Astrophysics Data System (ADS)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  7. Unintentional doping effects in black phosphorus by native vacancies in h-BN supporting layer

    NASA Astrophysics Data System (ADS)

    Zhu, Jiaduo; Zhang, Jincheng; Xu, Shengrui; Hao, Yue

    2017-04-01

    Ab initio calculations are used to study the indirect doping effect in black phosphorus (BP) from defects in h-BN support layer. We find defects in substrate can strongly introduce doping to the BP layer by weak van der Waals effect. With considering various native vacancies in h-BN, we find that indirect n-type doping of BP only manifests under case of isolated nitrogen vacancy. P-type doping is presented in most cases including different divacancies, which is in consistent with published experimental reports. Besides, we find presence of BP upon h-BN can also alter the intrinsic magnetic properties of defective h-BN layer.

  8. Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices

    DTIC Science & Technology

    2014-06-03

    SECURITY CLASSIFICATION OF: Minority carrier lifetimes in undoped and Beryllium -doped Type-2 Ga-free, InAs/InAsSb strained layer superlattices (SLS) with...is unlimited. Minority Carrier Lifetime in Beryllium -Doped InAs/InAsSb Strained Layer Superlattices The views, opinions and/or findings contained in...Brook University W-5510 Melville Library West Sayville, NY 11796 -3362 1 ABSTRACT Minority Carrier Lifetime in Beryllium -Doped InAs/InAsSb Strained

  9. Epitaxial Atomic Layer Deposition of Sn-Doped Indium Oxide

    SciTech Connect

    Emery, Jonathan D.; Schlepütz, Christian M.; Guo, Peijun; Chang, Robert P. H.; Martinson, Alex B. F.

    2016-02-03

    Coherently strained, epitaxial Sn-doped In2O3 (ITO) thin films were fabricated at temperatures as low as 250 degrees C using atomic layer deposition (ALD) on (001)-, (011)-, and (111)-oriented single-crystal Y-stabilized ZrO2 (YSZ) substrates. Resultant films possess cube-on-cube epitaxial relationships with the underlying YSZ substrates and are smooth, highly conductive, and optically transparent. This epitaxial ALD approach is favorable compared to many conventional growth techniques as it is a large-scale synthesis method that does not necessitate the use of high temperatures or ultrahigh vacuum. These films may prove valuable as a conductive growth template in areas where high-quality crystalline thin film substrates are important, such as solar energy materials, light-emitting diodes, or wide bandgap semiconductors. Furthermore, we discuss the applicability of this ALD system as an excellent model system for the study of ALD surface chemistry, nucleation, and film growth.

  10. Dielectric function for doped graphene layer with barium titanate

    NASA Astrophysics Data System (ADS)

    Martinez Ramos, Manuel; Garces Garcia, Eric; Magana, Fernado; Vazquez Fonseca, Gerardo Jorge

    2015-03-01

    The aim of our study is to calculate the dielectric function for a system formed with a graphene layer doped with barium titanate. Density functional theory, within the local density approximation, plane-waves and pseudopotentials scheme as implemented in Quantum Espresso suite of programs was used. We considered 128 carbon atoms with a barium titanate cluster of 11 molecules as unit cell with periodic conditions. The geometry optimization is achieved. Optimization of structural configuration is performed by relaxation of all atomic positions to minimize their total energies. Band structure, density of states and linear optical response (the imaginary part of dielectric tensor) were calculated. We thank Dirección General de Asuntos del Personal Académico de la Universidad Nacional Autónoma de México, partial financial support by Grant IN-106514 and we also thank Miztli Super-Computing center the technical assistance.

  11. [Investigation of the layers doped with rare earth elements in Si substrate and it's key problems].

    PubMed

    Cheng, Guo-an

    2005-03-01

    The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique. The photoluminescence spectra in the layers doped with ions of La, Ce and Nd were obtained at room temperature. At the same time, the up-conversion luminescence in the doped layers was observed. The intensities of both the luminescence and the up-conversion luminescence increased with increasing the doping dose and the treatment temperature. However, the intensities of the luminescence decreased with increasing the exciting wavelength between 220 nm and 300 nm; the intensities of the up-conversion luminescence increased with increasing the exciting wavelength between 600 nm and 800 nm. It was indicated that the luminescence and the up-conversion luminescence in the layers doped with ions of La, Ce and Nd depended on the doping dose, the heat treatment temperature and the exciting wavelength.

  12. Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

    NASA Astrophysics Data System (ADS)

    Park, Wug-Dong; Tanioka, Kenkichi

    2016-07-01

    Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current-voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current-voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.

  13. Charge storage in polymer acid-doped polyaniline-based layer-by-layer electrodes.

    PubMed

    Jeon, Ju-Won; O'Neal, Josh; Shao, Lin; Lutkenhaus, Jodie L

    2013-10-23

    Polymeric electrodes that can achieve high doping levels and store charge reversibly are desired for electrochemical energy storage because they can potentially achieve high specific capacities and energies. One such candidate is the polyaniline:poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PANI:PAAMPSA) complex, a water-processable complex obtained via template polymerization that is known to reversibly achieve high doping levels at potentials of up to 4.5 V versus Li/Li+. Here, for the first time, PANI:PAAMPSA is successfully incorporated into layer-by-layer (LbL) electrodes. This processing technique is chosen for its ability to blend species on a molecular level and its ability to conformally coat a substrate. Three different polyaniline-based LbL electrodes comprised of PANI/PAAMPSA, PANI/PANI:PAAMPSA, and linear poly(ethylenimine)/PANI:PAAMPSA are compared in terms of film growth, charge storage, and reversibility. We found that the reversibility of PANI:PAAMPSA is retained within the LbL electrodes and that the PANI/PANI:PAAMPSA electrode exhibits the best performance in terms of capacity and cycle life. These results provide general guidelines for the assembly of PANI:PAAMPSA in LbL films and also demonstrate their potential as electrochemically active components in electrodes.

  14. Graphene coated with controllable N-doped carbon layer by molecular layer deposition as electrode materials for supercapacitors

    NASA Astrophysics Data System (ADS)

    Chen, Yao; Gao, Zhe; Zhang, Bin; Zhao, Shichao; Qin, Yong

    2016-05-01

    In this work, graphene is coated with nitrogen-doped carbon layer, which is produced by a carbonization process of aromatic polyimide (PI) films deposited on the surfaces of graphene by molecular layer deposition (MLD). The utilization of MLD not only allows uniform coating of PI layers on the surfaces of pristine graphene without any surface treatment, but also enables homogenous dispersion of doped nitrogen atoms in the carbonized products. The as-prepared N-doped carbon layer coated graphene (NC-G) exhibited remarkable capacitance performance as electrode materials for supercapacitor, showing a high specific capacitance of 290.2 F g-1 at current density of 1 A g-1 in 6 M KOH aqueous electrolyte, meanwhile maintaining good rate performance and stable cycle capability. The NC-G synthesized by this way represents an alternative promising candidate as electrode material for supercapacitors.

  15. Layered and doped materials for plasma-facing components

    SciTech Connect

    Conrads, H. )

    1991-07-01

    The performance of tokamaks under normal operating conditions, has indicated problems associated with the use of graphite and amorphous hydrogenated carbon (a-C:H) films produced in situ by carbonization. These include unwanted release of oxygen and carbon into the plasma core and difficulties in controlling the plasma density in the boundary layer for entering into the supershot regime and the hot-ion mode, i.e., regimes where the rate of fusion reactions became substantial. Boron and beryllium have been introduced to overcome these problems. Boron-carbon systems such as doped graphites, boron carbide (B{sub 4}C) coat mix materials, plasma-sprayed B{sub 4}C graphites, and amorphous boron-containing hydrogenated carbon (a-C/B:H) films produced in situ by boronization are under investigation today, and some of these have performed quite well in tokamaks. The same holds true for beryllium, which is introduced into the tokamak by evaporation techniques or as tiles.

  16. Nitrogen doping of nanoporous WO3 layers by NH3 treatment for increased visible light photoresponse.

    PubMed

    Nah, Yoon-Chae; Paramasivam, Indhumati; Hahn, Robert; Shrestha, Nabeen K; Schmuki, Patrik

    2010-03-12

    Nanoporous WO(3) layers were grown by electrochemical anodization of W in a fluoride containing electrolyte. These layers were exposed to a thermal treatment in NH(3) to achieve nitrogen doping of the material. The morphology, crystal structure, composition and photoresponse of pure and nitrogen doped WO(3) were compared using scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and photoelectrochemical measurements. The results clearly show that successful nitrogen doping into WO(3) layers can be achieved by controlling the temperature and time during the NH(3) treatment. Most importantly, it is demonstrated that for the nitrogen doped WO(3) layers the photocurrent is significantly enhanced in the visible light region.

  17. Effect of Mo-doping concentration on the physical behaviour of sprayed ZnO layers

    SciTech Connect

    Reddy, T. Sreenivasulu; Reddy, M. Vasudeva; Reddy, K. T. Ramakrishna

    2015-06-24

    Mo-doped zinc oxide layers (MZO) have been prepared on cleaned glass substrates by chemical spray pyrolysis technique by varying Mo-doping concentration in the range, 0 – 5 at. %. The X-ray diffraction studies revealed that all the as prepared layers were polycrystalline in nature and exhibited wurtzite structure. The layers prepared with lower Mo-doping concentration (<2 at. %) were preferably oriented along the (100) plane, whereas in the case of higher Mo-doping concentration (>2 at. %), the films showed the (002) plane as the dominant peak. The optical analysis indicated that all the layers had an average optical transmittance of 80% in the visible region and the evaluated band gap varied in the range, 3.28 - 3.50 eV.

  18. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    DOEpatents

    Singh, P.; Ruka, R.J.

    1995-02-14

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO{sub 3} particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO{sub 3} particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr{sub 2}O{sub 3} on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO{sub 3} layer coated with CaO and Cr{sub 2}O{sub 3} surface deposit at from about 1,000 C to 1,200 C to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO{sub 3} layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power. 5 figs.

  19. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    DOEpatents

    Singh, Prabhakar; Ruka, Roswell J.

    1995-01-01

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO.sub.3 particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO.sub.3 particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr.sub.2 O.sub.3 on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO.sub.3 layer coated with CaO and Cr.sub.2 O.sub.3 surface deposit at from about 1000.degree. C. to 1200.degree. C. to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO.sub.3 layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power.

  20. Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3

    DOE PAGES

    Ren, Xiaochen; Singh, Arunima K.; Fang, Lei; ...

    2016-09-07

    Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the totnographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom, probe tomography (APT). Also, APT analysis shows that Ag dopes both Bi2Se3 and PbSe layers in (PbSe)5(Bi2Se3)3, and correlations :in the position of Ag atoms suggest a pairing across neighboring Bi2Se3 and PbSe layers. Finally, density functional theory (DFT) calculations confirm the favorability of substitutional-doping for bothmore » Pb and Bi and provide insights into the,observed spatial correlations in dopant locations.« less

  1. Atomic layer deposition of Al-doped ZnO thin films

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  2. Metallic conduction induced by direct anion site doping in layered SnSe2

    PubMed Central

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~1020 cm−3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S·cm−1 from ~1.7 S·cm−1 for non-doped SnSe2. When the carrier concentration exceeds ~1019 cm−3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2. PMID:26792630

  3. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    NASA Astrophysics Data System (ADS)

    Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

    2016-02-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

  4. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  5. Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

    NASA Astrophysics Data System (ADS)

    Sheu, Jinn-Kong; Huang, Feng-Wen; Lee, Chia-Hui; Lee, Ming-Lun; Yeh, Yu-Hsiang; Chen, Po-Cheng; Lai, Wei-Chih

    2013-08-01

    GaN-based solar cells with Mn-doped absorption layer grown by metal-organic vapor-phase epitaxy were investigated. The transmittance spectrum and the spectral response showed the presence of an Mn-related band absorption property. Power-dependent, dual-light excitation, and lock-in amplifier techniques were performed to confirm if the two-photon absorption process occurred in the solar cells with Mn-doped GaN absorption layer. Although a slight decrease in an open circuit voltage was observed, a prominent increase in the short circuit current density resulted in a significant enhancement of the overall conversion efficiency. Under one-sun air mass 1.5 G standard testing condition, the conversion efficiency of Mn-doped solar cells can be enhanced by a magnitude of 5 times compared with the cells without Mn-doped absorption layer.

  6. Comparison of dye doping and ultrathin emissive layer in white organic light-emitting devices with dual emissive layers

    NASA Astrophysics Data System (ADS)

    Wang, Xu; Qi, Yige; Yu, Junsheng

    2014-09-01

    White organic light-emitting devices (WOLEDs) with combined doping emissive layer (EML) and ultrathin EML have been fabricated to investigate the effect of each EML on the electroluminescent (EL) performance of the WOLEDs. Through tailoring doping concentration of bis[(4,6-difluorophenyl)-pyridinato-N,C2'](picolinate) iridium(III) (FIrpic) and thickness of ultrathin bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2'] iridium (acetylacetonate) [(tbt)2Ir(acac)] EML, it is found that the change in the doping ratio of FIrpic significantly influenced the EL efficiencies and spectra, while the alteration of ultrathin EML thickness had much milder effect on the EL performance. The results indicated that ultrathin EML is in favor of reproducibility in mass production compared with doping method.

  7. Doping effects of vanadium pentoxide in hole injection layer for quantum dot light emitting diodes

    NASA Astrophysics Data System (ADS)

    Song, Suk-Ho; Song, Dae-Ho; Lee, Jun-Seo; Kim, Sang-Soo; Song, Jang-Kun

    2017-05-01

    We report the doping effect of V2O5 into hole injection layer (HIL) for quantum dot light emitting diodes (QD-LEDs). We used PEDOT:PSS for HIL, and by doping 0.1 wt% of V2O5 into PEDOT:PSS layer, the maximum external quantum efficiency was increased from 1 % to 1.28 % and the turn-on voltage was reduced from 14.65 V to 12.72 V, when compared to pure PEDOT:PSS. This indicates that V2O5 enhances the hole injection property for PEDOT:PSS layer.

  8. Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Watanabe, M.; Actor, G.

    1977-01-01

    Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

  9. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOEpatents

    Yang, Liyou

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  10. Single crystal diamond boron 'delta doped' nanometric layers for 2D electronic devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Butler, James

    2016-10-01

    Use of diamond as a semiconductor material suffers from the high activation energy of all known impurity dopants (0.37 eV for Boron, 0.6 eV for Phosphorous). To achieve the simultaneous carrier concentration and mobility desired for devices operating at room temperature, growth of a nanometric thick `delta' layer doped to above the metal insulator transition adjacent to high mobility intrinsic material can provide a 2D high mobility conduction layer. Critical to obtaining the enhanced mobility of the carriers in the layer next to the `delta' doped layer is the abruptness of the doping interface. Single and multiple nanometer thick epitaxial layers of heavily boron `delta' doped diamond have been grown on high quality, intrinsic lab grown diamond single crystals. These layers were grown in a custom microwave plasma activated chemical vapor deposition reactor based on a rapid reactant switching technique. Characterization of the `delta' layers by various analytical techniques will be presented. Electrical measurements demonstrating enhanced hole mobility (100 to 800 cm2/V sec) as well as other electrical characterizations will be presented.

  11. Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

    SciTech Connect

    Liang, Xianqing; Zhong, Jun; Shi, Yalin; Guo, Jin; Huang, Guolong; Hong, Caihao; Zhao, Yidong

    2015-01-15

    Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications.

  12. Band Gap Engineering and Layer-by-Layer Band Gap Mapping of Selenium-doped Molybdenum Disulfide

    SciTech Connect

    Gong, Yongji; Liu, Zheng; Lupini, Andrew R; Lin, Junhao; Pantelides, Sokrates T; Pennycook, Stephen J; Zhou, Wu; Ajayan, Pullikel M

    2014-01-01

    Ternary two-dimensional dichalcogenide alloys exhibit compositionally modulated electronic structure and hence, control of dopant concentration within each layer of these layered compounds provides a powerful way to modify their properties. The challenge then becomes quantifying and locating the dopant atoms within each layer in order to better understand and fine-tune the desired properties. Here we report the synthesis of selenium substitutionally doped molybdenum disulfide atomic layers, with a broad range of selenium concentrations, resulting in band gap modulations of over 0.2 eV. Atomic scale chemical analysis using Z-contrast imaging provides direct maps of the dopant atom distribution in individual MoS2 layers and hence a measure of the local band gaps. Furthermore, in a bilayer structure, the dopant distribution of each layer is imaged independently. We demonstrate that each layer in the bilayer contains similar doping levels, randomly distributed, providing new insights into the growth mechanism and alloying behavior in two-dimensional dichalcogenide atomic layers. The results show that growth of uniform, ternary, two-dimensional dichalcogenide alloy films with tunable electronic properties is feasible.

  13. Layer-by-layer assembled heteroatom-doped graphene films with ultrahigh volumetric capacitance and rate capability for micro-supercapacitors.

    PubMed

    Wu, Zhong-Shuai; Parvez, Khaled; Winter, Andreas; Vieker, Henning; Liu, Xianjie; Han, Sheng; Turchanin, Andrey; Feng, Xinliang; Müllen, Klaus

    2014-07-09

    Highly uniform, ultrathin, layer-by-layer heteroatom (N, B) co-doped graphene films are fabricated for high-performance on-chip planar micro-supercapacitors with an ultrahigh volumetric capacitance of ∼488 F cm(-3) and excellent rate capability due to the synergistic effect of nitrogen and boron co-doping.

  14. Atomic-Layer-Confined Doping for Atomic-Level Insights into Visible-Light Water Splitting.

    PubMed

    Lei, Fengcai; Zhang, Lei; Sun, Yongfu; Liang, Liang; Liu, Katong; Xu, Jiaqi; Zhang, Qun; Pan, Bicai; Luo, Yi; Xie, Yi

    2015-08-03

    A model of doping confined in atomic layers is proposed for atomic-level insights into the effect of doping on photocatalysis. Co doping confined in three atomic layers of In2S3 was implemented with a lamellar hybrid intermediate strategy. Density functional calculations reveal that the introduction of Co ions brings about several new energy levels and increased density of states at the conduction band minimum, leading to sharply increased visible-light absorption and three times higher carrier concentration. Ultrafast transient absorption spectroscopy reveals that the electron transfer time of about 1.6 ps from the valence band to newly formed localized states is due to Co doping. The 25-fold increase in average recovery lifetime is believed to be responsible for the increased of electron-hole separation. The synthesized Co-doped In2S3 (three atomic layers) yield a photocurrent of 1.17 mA cm(-2) at 1.5 V vs. RHE, nearly 10 and 17 times higher than that of the perfect In2S3 (three atomic layers) and the bulk counterpart, respectively.

  15. Characterization of ALD Processed Gallium Doped TiO2 Hole Blocking Layer in an Inverted Organic Solar Cell

    NASA Astrophysics Data System (ADS)

    Lee, Eun Ju; Ryu, Sang Ouk

    2017-02-01

    To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped TiO2 as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped TiO2 layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping.

  16. Electronic structure evolution in doping of fullerene (C60) by ultra-thin layer molybdenum trioxide

    NASA Astrophysics Data System (ADS)

    Wang, Chenggong; Liu, Xiaoliang; Wang, Congcong; Kauppi, John; Gao, Yongli

    2015-08-01

    Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C60 to MoOx and Mo6+ oxides is the basis as hole dopants.

  17. Spin tuning of electron-doped metal-phthalocyanine layers.

    PubMed

    Stepanow, Sebastian; Lodi Rizzini, Alberto; Krull, Cornelius; Kavich, Jerald; Cezar, Julio C; Yakhou-Harris, Flora; Sheverdyaeva, Polina M; Moras, Paolo; Carbone, Carlo; Ceballos, Gustavo; Mugarza, Aitor; Gambardella, Pietro

    2014-04-09

    The spin state of organic-based magnets at interfaces is to a great extent determined by the organic environment and the nature of the spin-carrying metal center, which is further subject to modifications by the adsorbate-substrate coupling. Direct chemical doping offers an additional route for tailoring the electronic and magnetic characteristics of molecular magnets. Here we present a systematic investigation of the effects of alkali metal doping on the charge state and crystal field of 3d metal ions in Cu, Ni, Fe, and Mn phthalocyanine (Pc) monolayers adsorbed on Ag. Combined X-ray absorption spectroscopy and ligand field multiplet calculations show that Cu(II), Ni(II), and Fe(II) ions reduce to Cu(I), Ni(I), and Fe(I) upon alkali metal adsorption, whereas Mn maintains its formal oxidation state. The strength of the crystal field at the Ni, Fe, and Mn sites is strongly reduced upon doping. The combined effect of these changes is that the magnetic moment of high- and low-spin ions such as Cu and Ni can be entirely turned off or on, respectively, whereas the magnetic configuration of MnPc can be changed from intermediate (3/2) to high (5/2) spin. In the case of FePc a 10-fold increase of the orbital magnetic moment accompanies charge transfer and a transition to a high-spin state.

  18. Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering

    NASA Astrophysics Data System (ADS)

    Ueno, Kohei; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-10-01

    Highly conductive Ge-doped GaN epitaxial layers were grown by low-temperature pulsed sputtering, and their fundamental structural and electrical properties were investigated. The room-temperature (RT) electron concentration was increased to 5.1 × 1020 cm‑3 by the Ge doping, and the atomically flat stepped and terraced surface and the crystalline quality of the layers were maintained. Consequently, the RT resistivity was reduced to 0.20 mΩ·cm, which is comparable to that for typical transparent conductive oxides such as indium tin oxide. The contact resistance of Ge-doped GaN with a Ti/Al/Ti/Au metal stack prepared without annealing was as low as 0.087 Ω·mm. Furthermore, the selective formation of a Ge-doped region using an SiO2 mask was demonstrated. The results clearly indicate the strong potential of pulsed sputtering Ge-doped GaN growth for forming low-parasitic-resistance contact layers of various electrical and optical devices.

  19. Nitrogen-doped carbon capsules via poly(ionic liquid)-based layer-by-layer assembly.

    PubMed

    Zhao, Qiang; Fellinger, Tim-Patrick; Antonietti, Markus; Yuan, Jiayin

    2012-07-13

    Layer-by-layer (LbL) assembly technique is applied for the first time for the preparation of nitrogen-doped carbon capsules. This approach uses colloid silica as template and two polymeric deposition components, that is, poly(ammonium acrylate) and a poly (ionic liquid) poly(3-cyanomethyl-1-vinylimidazolium bromide), which acts as both the carbon precursor and nitrogen source. Nitrogen-doped carbon capsules are prepared successfully by polymer wrapping, subsequent carbonization and template removal. The as-synthesized carbon capsules contain ≈7 wt% of nitrogen and have a structured specific surface area of 423 m(2) g(-1). Their application as supercapacitor has been briefly introduced. This work proves that LbL assembly methodology is available for preparing carbon structures of complex morphology. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Free-carrier absorption from Fibonacci sequences of. delta. -doped layers in silicon

    SciTech Connect

    Sernelius, B.E. Department of Physics, University of Tennessee, Knoxville, Tennessee 37996 Department of Physics and Measurement Technology, University of Linkoping, S-58183 Linkoping, Sweden)

    1989-09-15

    Theoretical results are reported for the dynamical resistivity and free-carrier absorption from Fibonacci sequences of {delta}-doped layers in silicon. Distinct peaks develop, with increasing generation number, in the region of plasmon excitations and the spectra show self-similarity properties. Numerical results are presented for sequences with generation numbers 5, 10, and 15, corresponding to a total number of layers approximately equal to 10, 100, and 1000, respectively.

  1. Large energy mode locking of an erbium-doped fiber laser with atomic layer graphene.

    PubMed

    Zhang, H; Tang, D Y; Zhao, L M; Bao, Q L; Loh, K P

    2009-09-28

    We report on large energy pulse generation in an erbium-doped fiber laser passively mode-locked with atomic layer graphene. Stable mode locked pulses with single pulse energy up to 7.3 nJ and pulse width of 415 fs have been directly generated from the laser. Our results show that atomic layer graphene could be a promising saturable absorber for large energy mode locking.

  2. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  3. Efficiency Enhancement of Inverted Structure Perovskite Solar Cells via Oleamide Doping of PCBM Electron Transport Layer.

    PubMed

    Xia, Fei; Wu, Qiliang; Zhou, Pengcheng; Li, Yi; Chen, Xiang; Liu, Qing; Zhu, Jun; Dai, Songyuan; Lu, Yalin; Yang, Shangfeng

    2015-06-24

    An amphiphilic surfactant, oleamide, was applied to dope the PCBM electron transport layer (ETL) of inverted structure perovskite solar cells (ISPSCs), resulting in a dramatic efficiency enhancement. Under the optimized oleamide doping ratio of 5.0 wt %, the power conversion efficiency of the CH3NH3PbIxCl(3-x) perovskite-based ISPSC device is enhanced from 10.05% to 12.69%, and this is primarily due to the increases of both fill factor and short-circuit current. According to the surface morphology study of the perovskite/PCBM bilayer film, oleamide doping improves the coverage of PCBM ETL onto the perovskite layer, and this is beneficial for the interfacial contact between the perovskite layer and the Ag cathode and consequently the electron transport from perovskite to the Ag cathode. Such an improved electron transport induced by oleamide doping is further evidenced by the impedance spectroscopic study, revealing the prohibited electron-hole recombination at the interface between the perovskite layer and the Ag cathode.

  4. Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide

    PubMed Central

    Biscaras, Johan; Chen, Zhesheng; Paradisi, Andrea; Shukla, Abhay

    2015-01-01

    Atomically thin films of layered materials such as molybdenum disulfide (MoS2) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n-doping density of 4 × 1014 cm−2 in few-layer MoS2 on glass substrates. With increasing carrier density we first induce an insulator to metal transition and subsequently an incomplete metal to superconductor transition in MoS2 with critical temperature ≈10 K. Contrary to earlier reports, after the onset of superconductivity, the superconducting transition temperature does not depend on the carrier density. Our doping method and the results we obtain in MoS2 for samples as thin as bilayers indicates the potential of this approach. PMID:26525386

  5. Study of quantum capacitance in N doped few layer graphene

    NASA Astrophysics Data System (ADS)

    Karakaya, Mehmet; Zhu, Jingyi; Podila, Ramakrishna; Srivastava, Anurag; Rao, Apparao; Department Of Physics; Astronomy, Clemson Nanomaterials Center, Clemson University Team; Iiitm-Gwalior, Madhya Pradesh, India Team

    2015-03-01

    The intrinsically small density of states at the Fermi level in graphene results in a small serial quantum capacitance CQ, which diminishes the total device capacitance value (Ctot) in supercapacitors. In this work, we studied CQ of N doped graphene in pyrrolic(N1), graphitic (N2) and pyridinic (N3) configurations. The observed CQ value for sample N1 was significantly different from samples N2 and N3, as predicted by DFT calculations, thus implying that precisely engineered dopant configurations, rather than concentration, can enhance CQ. Such approaches are pivotal for alleviating the existing bottlenecks in both graphene-based device scaling and supercapacitor electrode limitations. NSF CMMI SNM Award #1246800.

  6. As- or P-Doped Si Layers Grown by RPCVD for Emitter Application in SiGeC HBTs

    NASA Astrophysics Data System (ADS)

    Suvar, Erdal; Haralson, Erik; Hållstedt, Julius; Radamson, Henry H.; Östling, Mikael

    2004-01-01

    A new module for the emitter formation in a bipolar transistor is presented. Arsenic- or phosphorus-doped polycrystalline silicon layer for the emitter formation is deposited in a reduced pressure chemical vapor deposition reactor using silane as the silicon source gas. Characteristics such as the carrier concentration, conductivity, surface morphology, and thermal stability of the polycrystalline-silicon layer as well as the influence this layer has on a SiGeC transistor structure during the drive-in step area studied. The active carrier concentration of the as-grown sample is strongly dependent on the deposition temperature, especially arsenic doped layers which exhibit more than one order of magnitude difference. However, the carrier concentration for the As- or P-doped layer were comparable to that of a standard in-situ doped poly-crystalline layer after a dopant activation at 925°C for 10s.

  7. Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Ebert, Ph.; Landrock, S.; Chiu, Y. P.; Breuer, U.; Dunin-Borkowski, R. E.

    2012-11-01

    The effect of counterdoping on the Be dopant distribution in delta (δ)-doped layers embedded in Si-doped and intrinsic GaAs is investigated by cross-sectional scanning tunneling microscopy. δ-doped layers in intrinsic GaAs exhibit a large spreading, whereas those surrounded by Si-doped GaAs remain spatially localized. The different spreading is explained by the Fermi-level pinning at the growth surface, which leads to an increased Ga vacancies concentration with increasing Si counterdoping. The Ga vacancies act as sinks for the diffusing Be dopant atoms, hence retarding the spreading.

  8. Mitigating voltage and capacity fading of lithium-rich layered cathodes by lanthanum doping

    NASA Astrophysics Data System (ADS)

    Yu, Ruizhi; Wang, Gang; Liu, Meihong; Zhang, Xiaohui; Wang, Xianyou; Shu, Hongbo; Yang, Xiukang; Huang, Weihua

    2016-12-01

    La-doped lithium-rich layered oxide material Li1.2Mn0.54-xNi0.13Co0.13LaxO2 (x = 0.01, 0.02, 0.03) is firstly synthesized via a solvothermal method and subsequent high-temperature calcination technique. The effects of La substitution for partial Mn on the structure and electrochemical performance of materials are systematically studied by inductively coupled plasma optical emission spectroscopy (ICP-OES), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscope (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and electrochemical measurement. The results reveal that La is effectively and homogenously doped into the materials, which can expand pathway for intercalation/deintercalation of Li+ ions. In addition, owing to La doping, the Li1.2Mn0.52Ni0.13Co0.13La0.02O2 sample exhibits 93.2% capacity retention after 100 cycles at 1 C. More importantly, this doping can effectively restrain the decrease of average discharge voltage upon cycling, which is one of the longstanding fatal drawbacks for lithium-rich layered oxide material. Moreover, La doping can stabilize the layered framework upon long term cycling and suppress voltage fading, and thus resulting in the better cycling performance. Additionally, the rate capability is also improved by La doping due to the higher diffusion velocity of Li+ ions.

  9. Effect of a delta-doping green emitting layer in white organic light-emitting device

    NASA Astrophysics Data System (ADS)

    Zhao, Juan; Yu, Junsheng; Jiang, Yadong

    2012-10-01

    White organic light-emitting devices (WOLEDs) based on a double-emitting layer (EML) structure were fabricated, while phosphorescent blue and yellow emitters were employed. An ultra-thin layer of non-doped green tris(2-phenylpyridine) iridium [Ir(ppy)3], which was considered as delta-doping layer, was inserted between the two EMLs for optimization. Furthermore, effect of adjusting thickness of this thin layer on device performance was studied. The results showed that the optimized WOLED consisting of 1-nm Ir(ppy)3 EML achieved a maximum luminance of 29,100 cd/m2, maximum external quantum efficiency of 7%, maximum current efficiency of 25.3 cd/A and maximum power efficiency of 7.8 lm/W, together with low efficiency roll-off over a wide luminance range. Meanwhile, the white emission with Commission Internationale del'Eclariage (CIE) coordinates of (0.382,0.446) at a driving voltage of 10 V were observed. The performance enhancement is ascribed to improved charge carrier balance through introduction the highly efficient Ir(ppy)3 as the thin delta-doping layer.

  10. Biophotonic low-coherence sensors with boron-doped diamond thin layer

    NASA Astrophysics Data System (ADS)

    Milewska, D.; Karpienko, K.; Sobaszek, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    Low-coherence sensors using Fabry-Perot interferometers are finding new applications in biophotonic sensing, especially due to the rapid technological advances in the development of new materials. In this paper we discuss the possibility of using boron-doped nanodiamond layers to protect mirror in a Fabry-Perot interferometer. A low-coherence sensor using Fabry-Perot interferometer with a boron-doped nanodiamond (B-NCD) thin protective layer has been developed. B-NCD layers with different boron doping level were investigated. The boron level, expressed as the boron to carbon (/[C]) ratio in the gas phase, was: 0, 2000, 5000 or 10000 ppm. B-NCD layers were grown by chemical vapor deposition (CVD). The sensing Fabry-Perot interferometer, working in the reflective mode, was connected to the source and to the optical processor by single-mode fibers. Superluminescent diodes with Gaussian spectral density were used as sources, while an optical spectrum analyzer was used as an optical processor. The design of the sensing interferometer was optimized to attain the maximum interference contrast. The experiment has shown that B-NCD thin layers can be successfully used in biophotonic sensors.

  11. A study of capping layers for sulfur monolayer doping on III-V junctions

    NASA Astrophysics Data System (ADS)

    Yum, J. H.; Shin, H. S.; Hill, R.; Oh, J.; Lee, H. D.; Mushinski, Ryan M.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Loh, W. Y.; Wang, Wei-E.; Kirsch, Paul

    2012-12-01

    Recently, high dosage doping on Si multi-gate field effect transistors and III-V planar structures using a self-limiting monolayer doping technique was reported to overcome challenges in scaling nano-sized transistors. The stoichiometry or composition of the capping layer was found to affect the diffusion efficiency of this process. In this work, we study the effect of a capping layer in sulfur monolayer doping on III-V junctions. Various capping temperatures and growth methods were compared. Based on the theoretical and experimental results, we suggest an optimized scheme consisting of a bi-layer capping structure. From Hall measurements and secondary ion mass spectrometry, a SiNx/BeO bi-layer capping, compared to single layer cap, exhibited the best results with a surface sheet resistance of 232 Ω/sq, junction depth of 11 nm, dopant profile abruptness of 3.5 nm/dec, electrically active S concentration of 4.9 × 1019/cm3 (=1.34 × 1013/cm2), and 3 times higher activation efficiency without significant transient-enhanced dopant diffusion.

  12. Front and back side SIMS analysis of boron-doped delta-layer in diamond

    NASA Astrophysics Data System (ADS)

    Pinault-Thaury, M.-A.; Jomard, F.; Mer-Calfati, C.; Tranchant, N.; Pomorski, M.; Bergonzo, P.; Arnault, J.-C.

    2017-07-01

    Nowadays the availability of very thin diamond layers in the range of nanometers as well as the possibility to characterize such delta-layer structures are required for the field of photonics and spintronics, but also for the development of next generation high power devices involving boron doping. The fabrication of diamond structures with abrupt interfaces such as superlattices and quantum wells has been recently improved. A very accurate characterization is then essential even though the analysis of such structures is arduous and challenging. SIMS analyses are commonly used to obtain depth profiles of dopants. However, below 10 nm in thickness, SIMS induced ion mixing effects which are no longer negligible. Then the raw SIMS profile might differ from the real dopant profile. In this study, we have analyzed a diamond structure containing a thin boron epilayer, especially synthesized to achieve SIMS analysis on both sides and to overcome the effects of ion mixing. We evidence the ion mixing induced by primary ions. Such a structure is a delta diamond layer, comparable to classical boron-doped delta-layer in silicon. Our results show that the growth of boron-doped delta-layer in diamond is now well controlled in terms of thickness and interfaces.

  13. Characterization of nitrogen doped silicon-carbon multi-layer nanostructures obtained by TVA method

    NASA Astrophysics Data System (ADS)

    Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Prodan, Gabriel C.; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Dinca, Paul; Zaharia, Agripina

    2016-09-01

    Ionized nitrogen doped Si-C multi-layer thin films used to increase the oxidation resistance of carbon have been obtained by Thermionic Vacuum Arc (TVA) method. The 100 nm thickness carbon thin films were deposed on silicon or glass substrates and then seven N doped Si-C successively layers on carbon were deposed. To characterize the microstructure, tribological and electrical properties of as prepared N-SiC multi-layer films, Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDXS), electrical and tribological techniques were achieved. Samples containing multi-layer N doped Si-C coating on carbon were investigated up to 1000°C. Oxidation protection is based on the reaction between SiC and elemental oxygen, resulting SiO2 and CO2, and also on the reaction involving N, O and Si-C, resulting silicon oxynitride (SiNxOy) with a continuously vary composition, and because nitrogen can acts as a trapping barrier for oxygen. The tribological properties of structures were studied using a tribometer with ball-on-disk configuration from CSM device with sapphire ball. The measurements show that the friction coefficient on the N-SiC is smaller than friction coefficient on uncoated carbon layer. Electrical conductivity at different temperatures was measured in constant current mode. The results confirm the fact that conductivity is greater when nitrogen content is greater. To justify the temperature dependence of conductivity we assume a thermally activated electrical transport mechanism.

  14. Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride.

    PubMed

    Liu, Zhun; Wang, Ru-Zhi; Liu, Li-Min; Lau, Woon-Ming; Yan, Hui

    2015-05-07

    Using first-principles calculations, we examined the bipolar doping of double-layer graphene vertical heterostructures, which are constructed by hydrogenated boron nitride (BN) sheets sandwiched into two parallel graphene monolayers. The built-in potential difference in hydrogenated BN breaks the interlayer symmetry, resulting in the p- and n-type doping of two graphene layers at 0.83 and -0.8 eV, respectively. By tuning the interlayer spacing between the graphene and hydrogenated BN, the interfacial dipole and screening charge distribution can be significantly affected, which produces large modulations in band alignments, doping levels and tunnel barriers. Furthermore, we present an analytical model to predicate the doping level as a function of the average interlayer spacing. With large interlayer spacings, the "pillow effect" (Pauli repulsion at the highly charge overlapped interface) is diminished and the calculated Dirac point shifts are in good accordance with our prediction models. Our investigations suggest that this double-layer graphene heterostructures constructed using two-dimensional Janus anisotropic materials offer exciting opportunities for developing novel nanoscale optoelectronic and electronic devices.

  15. (abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

    NASA Technical Reports Server (NTRS)

    Barner, J. B.; Hunt, B. D.; Foote, M. C.

    1995-01-01

    We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

  16. Controlled growth of antimony-doped tin dioxide thin films by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Viirola, H.; Niinistoe, L.

    1994-11-01

    Antimony-doped tin dioxide thin films were deposited on glass substrates by atomic layer epitaxy using SnCl4, SbCl5 and H2O as reactants. The growth experiments were carried out at 500 C. The effect of Sb doping on the growth rate, crystal texture and electrical and optical properties was studied. Spectrophotometry, secondary ion mass spectrometry, X-ray diffraction and electron spectroscopy for chemical analysis, as well as sheet resistance and Hall measurements were used to characterize the films. The films were highly uniform with only small thickness and sheet resistance variations. The films were polycrystalline with their crystallites having a preferred orientation, which depended on the Sb doping level and film thickness.

  17. Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

    SciTech Connect

    Duong, Dinh Loc; Lee, Si Young; Kim, Seong Kyu; Lee, Young Hee

    2015-06-15

    We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another side with holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) and a hydrofluorinated graphene, were used to demonstrate the concept with density functional calculations, revealing the Fermi level shift of 0.35 and 0.75 eV, respectively. This concept was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE))/graphene hybrid, which can easily form β-phase close to our simulation model. G-band peak position was downshifted for electron doping and upshifted for hole doping. This hybrid structure opens an opportunity to study bilayer graphene system with a controllable thickness for a wide range of high carrier concentration.

  18. P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yokoyama, Haruki; Hoshi, Takuya

    2015-01-01

    The electrical characteristics of Si-doped GaAsSb layers grown at various growth temperatures from 530 to 630 °C by metalorganic chemical vapor deposition (MOCVD), are investigated. When the substrate temperature is 530 °C, the conductivity of Si-doped GaAsSb layers is n-type. In contrast, Si-doped GaAsSb layers grown at higher temperature (580 °C) show p-type conductivity. Moreover, the p-type carrier concentration in these layers increases proportionally to the increase of the disilane (Si2H6) flow rate. This is the first time that p-type doping into GaAsSb layers has been achieved by MOCVD using Si as a dopant.

  19. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

    NASA Astrophysics Data System (ADS)

    Tsykaniuk, Bogdan I.; Nikolenko, Andrii S.; Strelchuk, Viktor V.; Naseka, Viktor M.; Mazur, Yuriy I.; Ware, Morgan E.; DeCuir, Eric A.; Sadovyi, Bogdan; Weyher, Jan L.; Jakiela, Rafal; Salamo, Gregory J.; Belyaev, Alexander E.

    2017-06-01

    Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

  20. Transparent layered YAG ceramics with structured Yb doping produced via tape casting

    NASA Astrophysics Data System (ADS)

    Hostaša, Jan; Piancastelli, Andreana; Toci, Guido; Vannini, Matteo; Biasini, Valentina

    2017-03-01

    The flexibility of the ceramic production process, in particular in terms of shaping and spatial control of distribution of active ions, is one of the strong points in favor of transparent ceramics. In high power lasers in particular, where thermal management is a critical issue, the finely controlled design of spatial distribution of the doping ions within the laser gain media can reduce undesired thermally induced effects and large temperature gradients, and thus enhance the efficiency and laser beam quality especially under increased thermal load. In the present work transparent structured YAG ceramics with Yb doping were produced by tape casting followed by thermal compression of assembled tapes and sintered under high vacuum. The thermal compression of variously doped tape cast layers is a very promising method because it allows a high precision and good control over dopant distribution in the sintered material. After sintering, the distribution of Yb across the layers was characterized by SEM-EDX and the thickness of Yb diffusion zones between the layers with different Yb content was measured. Optical homogeneity was assessed by means of optical transmittance mapping of the samples and by 2D scanning of laser output. The effect of structured dopant distribution on laser performance was measured in quasi-CW and CW regime with different duty factors. Slope efficiency values higher than 50% were measured both in quasi-CW and in CW lasing conditions. The results are in good agreement with previously calculated predictions, confirming the beneficial effect of structured doping on laser performances and enlightening the impact of the residual scattering losses. Compared to other processing methods, such as the pressing of granulated powders, tape casting followed by thermal compression leads to straight and narrow interfaces between layers with different composition and allows to build structures composed of extremely thin layers with defined dopant content.

  1. The impact of donors on recombination mechanisms in heavily doped Ge/Si layers

    NASA Astrophysics Data System (ADS)

    Barget, Michael R.; Virgilio, Michele; Capellini, Giovanni; Yamamoto, Yuji; Schroeder, Thomas

    2017-06-01

    Heavy n-type doping has been proposed as a route to achieve positive optical gain in germanium layers since it is supposed to enhance the Γc carrier density. Nevertheless, the impact of donor impurities on the excess carrier lifetime in heavy doped epitaxial Ge/Si layers has not yet been addressed in the literature. To elucidate this point, we investigate the optical properties of heavily doped Ge layers selectively grown on silicon by means of photoluminescence (PL) experiments and theoretical modelling. A self-consistent multi-valley effective mass numerical model for simulation of PL spectra has been implemented, taking into account the influence of dopants on the non-radiative recombination dynamics. Upon comparing measurements and modelling, we find a linear increase in the defect-related Shockley-Read-Hall (SRH) recombination rate as a function of the donor density. The non-radiative lifetime decreases from ˜30 ns in intrinsic Ge/Si samples to ˜0.1 ns for a doping density in the 1019 cm-3 range. As a consequence, we find that SRH is the dominant non-radiative recombination process up to a donor density of ˜5 × 1019 cm-3. Despite this reduced lifetime, we observe an overall positive impact of doping on the radiative recombination rate for donor densities up to an "optimal" value of ˜3 × 1019 cm-3, with a ×7 intensity enhancement compared to the intrinsic case. A further increase in the donor concentration brings about a worsening of the optical emission.

  2. Titanium doped silicon layers with very high concentration

    SciTech Connect

    Olea, J.; Toledano-Luque, M.; Pastor, D.; Gonzalez-Diaz, G.; Martil, I.

    2008-07-01

    Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10{sup 18} cm{sup -3}. Hall effect measurements show n-type samples with mobility values of about 400 cm{sup 2}/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.

  3. Self-Doping, O2-Stable, n-Type Interfacial Layer for Organic Electronics

    SciTech Connect

    Reilly, T. H. III; Hains, A. W.; Chen, H. Y.; Gregg, B. A.

    2012-04-01

    Solid films of a water-soluble dicationic perylene diimide salt, perylene bis(2-ethyltrimethylammonium hydroxide imide), Petma{sup +}OH{sup -}, are strongly doped n-type by dehydration and reversibly de-doped by hydration. The hydrated films consist almost entirely of the neutral perylene diimide, PDI, while the dehydrated films contain {approx}50% PDI anions. The conductivity increases by five orders of magnitude upon dehydration, probably limited by film roughness, while the work function decreases by 0.74 V, consistent with an n-type doping density increase of {approx}12 orders of magnitude. Remarkably, the PDI anions are stable in dry air up to 120 C. The work function of the doped film, {phi} (3.96 V vs. vacuum), is unusually negative for an O{sub 2}-stable contact. Petma{sup +} OH{sup -} is also characterized as an interfacial layer, IFL, in two different types of organic photovoltaic cells. Results are comparable to state of the art cesium carbonate IFLs, but may improve if film morphology can be better controlled. The films are stable and reversible over many months in air and light. The mechanism of this unusual self-doping process may involve the change in relative potentials of the ions in the film caused by their deshielding and compaction as water is removed, leading to charge transfer when dry.

  4. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    DOE PAGES

    Shi, X.; Pan, W.; Baldwin, K. W.; ...

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d,more » electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.« less

  5. Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

    DOE PAGES

    Wang, Qi; Bi, Cheng; Huang, Jinsong

    2015-05-06

    We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

  6. Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

    SciTech Connect

    Wang, Qi; Bi, Cheng; Huang, Jinsong

    2015-05-06

    We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

  7. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  8. Optical anisotropy of tungsten-doped ReS2 layered crystals

    NASA Astrophysics Data System (ADS)

    Hsu, H. P.; Lin, K. H.; Huang, Y. S.

    2016-12-01

    The optical anisotropy of tungsten-doped rhenium disulfide (ReS2:W) layered crystals have been studied by polarization and temperature dependent piezoreflectance (PzR) spectroscopy from 25 to 300 K. The direct band edge excitonic transitions E1ex feature at E∥b polarization and E2ex feature at E⊥b polarization of tungsten-doped ReS2 layered crystals were determined from a detailed line-shape fit of the PzR spectra. The PzR spectra reveal a slightly blue shifted of excitonic transition with the tungsten incorporation. The angular dependence of the excitonic feature amplitudes agrees with Malus' rule. The parameters that describe the temperature variation of the energies and broadening function of the excitonic transitions are determined and discussed.

  9. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    SciTech Connect

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.

  10. MOCVD Grown Si-Doped n+ InP Layers for the Subcollector Region in HBTs

    DTIC Science & Technology

    1994-01-01

    with growth Experimental rates -4 A/sec. The dopant gas was 0.5 % silane in hydrogen (concentration - 3.3 x 10-6 m.f. per sccm). To explore the...proportional contact layer we have chosen to show the electrical data as (Constant silane flow) the conductivity, a, and the Hall effect free carrier...charge and pi the electron Silane flow Linearly proportional mobility). Trimethylindium flow Inversely proportional Figure 1 shows the effect of Si-doping

  11. Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

    NASA Astrophysics Data System (ADS)

    Wang, Shuyu; Yu, Shifeng; Lu, Ming; Liu, Mingzhao; Zuo, Lei

    2017-04-01

    Here we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

  12. Density of states determination in organic donor-acceptor blend layers enabled by molecular doping

    NASA Astrophysics Data System (ADS)

    Fischer, Janine; Ray, Debdutta; Kleemann, Hans; Pahner, Paul; Schwarze, Martin; Koerner, Christian; Vandewal, Koen; Leo, Karl

    2015-06-01

    Charge carrier transport is a key parameter determining the efficiency of organic solar cells, and is closely related to the density of free and trapped states. For trap characterization, impedance spectroscopy is a suitable, non-invasive method, applicable to complete organic semiconductor devices. In order to contribute to the capacitive signal, the traps must be filled with charge carriers. Typically, trap filling is achieved by illuminating the device or by injecting charge carriers through application of a forward bias voltage. However, in both cases, the exact number of charge carriers in the device is not known and depends strongly on the measurement conditions. Here, hole trap states of the model blend layer ZnPc:C60 are filled by weak p-doping, enabling trap characterization in a blend layer at a controlled hole density. We evaluate impedance spectra at different temperatures in order to determine the density of occupied states (DOOS) directly from the capacitance-frequency spectra by assuming a simple energy diagram. The reconstructed DOOS distribution is analyzed at different doping concentrations and device thicknesses and compared to thermally stimulated current measurements performed on the same devices. In both methods, a pronounced Gaussian peak at about 0.4 eV below the transport level is found as well as deep, exponential tail states, providing a deeper insight into the density of states distribution of this donor-acceptor blend layer. Additionally, the effect of doping-induced trap filling on the solar cell characteristics is studied in these devices.

  13. Formation of manganese {delta}-doped atomic layer in wurtzite GaN

    SciTech Connect

    Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R.

    2012-09-01

    We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

  14. Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er

    NASA Astrophysics Data System (ADS)

    Zakharov, N. D.; Werner, P.; Vdovin, V. I.; Denisov, D. V.; Sobolev, N. A.; Gösele, U.

    The main types of crystal structure defects in [Er]>2×1019 doped layers are: (i) spherical Er and (ii) ellipsoidal ErSi precipitates, as well as (iii) ErSi2 platelets on {111} planes. In the sample with [Er]=4x1019, small complexes consisting of tiny Er precipitates and four petals of ErSi2 platelets have been found additionally. The layer with [Er]= 8×1018 cm-3 was defect free. The formation of silicides from a supersaturated solid solution and Er precipitates is accompanied by the emission of vacancies V resulting in the formation of pores, V-V and V-Er complexes.

  15. Fabrication and characterization of perovskite-type solar cells with Nb-doped TiO{sub 2} layers

    SciTech Connect

    Saito, Jo; Oku, Takeo Suzuki, Atsushi; Akiyama, Tsuyoshi

    2016-02-01

    Organic-inorganic hybrid heterojunction solar cells containing perovskite CH{sub 3}NH{sub 3}PbI{sub 3} using Nb-doped TiO{sub 2} as an electron-transporting layer were fabricated and characterized. Nb-doped TiO{sub 2} layer showed an improvement of the short-circuit current density and power conversion efficiency using Ti{sub 0.95}Nb{sub 0.05}O{sub 2}.

  16. Fabrication and characterization of perovskite-type solar cells with Nb-doped TiO2 layers

    NASA Astrophysics Data System (ADS)

    Saito, Jo; Oku, Takeo; Suzuki, Atsushi; Akiyama, Tsuyoshi

    2016-02-01

    Organic-inorganic hybrid heterojunction solar cells containing perovskite CH3NH3PbI3 using Nb-doped TiO2 as an electron-transporting layer were fabricated and characterized. Nb-doped TiO2 layer showed an improvement of the short-circuit current density and power conversion efficiency using Ti0.95Nb0.05O2.

  17. Microstructure of the native oxide layer on Ni and Cr-doped Ni nanoparticles.

    PubMed

    Wang, Chong-Min; Baer, Donald R; Bruemmer, Stephen M; Engelhard, Mark H; Bowden, Mark E; Sundararajan, Jennifer A; Qiang, You

    2011-10-01

    Most metallic nanoparticles exposed to air at room temperature will be instantaneously oxidized and covered by an oxide layer. In most cases the true structural nature of the oxide layer formed at this stage is hard to determine. As shown previously for Fe and other nanoparticles, the nature of the oxides form on the particles can vary with particle size and nature of the oxidation process. In this paper, we report the morphology and structural features of the native oxide layer on pure Ni and Cr-doped Ni nanoparticles synthesized using a cluster deposition process. Structural characterization carried out at the atomic level using aberration corrected high resolution transmission electron microscopy (HRTEM) in combination with electron and X-ray diffractions reveals that both pure Ni and Cr-doped Ni particles exposed to air at room temperature similarly possesses a core-shell structure of metal core covered by an oxide layer of typically 1.6 nm in thickness. There exists a critical size of approximately 6 nm, below which the particle is fully oxidized. The oxide particle corresponds to the rock-salt structured NiO and is faceted on the (001) planes. XPS of O-1s shows a strong peak that is attributed to (OH)-, which in combination with the atomic level HRTEM imaging indicates that the very top layer of the oxide is hydrolyzed.

  18. Enhancement of proton exchange membrane fuel cell performance by doping microporous layers of gas diffusion layers with multiwall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Schweiss, Rüdiger; Steeb, Marcus; Wilde, Peter M.; Schubert, Tim

    2012-12-01

    Microporous layers (MPLs) of gas diffusion layers (GDLs) were modified by multiwall carbon nanotubes (MWCNTs) using a wet-chemical approach. Carbon nanotubes were dispersed along with other MPL components and coated onto a GDL backing. The electronic resistance of the GDL was significantly reduced by the addition of MWCNTs. A larger mean pore diameter was obtained as compared to the reference substrates. The improved performance of proton exchange membrane fuel cells (PEMFCs) using such CNT-doped GDLs is attributed to a lower electronic resistance along with improved mass transport. Synergy effects of different carbon materials with MWCNTs and advanced dispersion processes were found to play a key role in achieving the performance improvements.

  19. Electrical conductivity of reconstructed Si(111) surface with sodium-doped C{sub 60} layers

    SciTech Connect

    Tsukanov, D. A. Saranin, A. A.; Ryzhkova, M. V.; Borisenko, E. A.; Zotov, A. V.

    2015-01-05

    Electrical conductance of sodium-doped C{sub 60} ultra-thin layers (1–6 monolayers) grown on the Na-adsorbed Si(111)√3 × √3-Au surface has been studied in situ by four-point probe technique, combined with low-energy electron diffraction observations. Evidence of conductance channel formation through the C{sub 60} ultrathin layer is demonstrated as a result of Na dosing of 3 and 6 monolayers thick C{sub 60} layers. The observed changes in surface conductivity can be attributed to the formation of fulleride-like NaC{sub 60} and Na{sub 2}C{sub 60} compound layers.

  20. Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3

    SciTech Connect

    Ren, Xiaochen; Singh, Arunima K.; Fang, Lei; Kanatzidis, Mercouri G.; Tavazza, Francesca; Davydov, Albert V.; Lauhon, Lincoln J.

    2016-09-07

    Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the totnographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom, probe tomography (APT). Also, APT analysis shows that Ag dopes both Bi2Se3 and PbSe layers in (PbSe)5(Bi2Se3)3, and correlations :in the position of Ag atoms suggest a pairing across neighboring Bi2Se3 and PbSe layers. Finally, density functional theory (DFT) calculations confirm the favorability of substitutional-doping for both Pb and Bi and provide insights into the,observed spatial correlations in dopant locations.

  1. Improved performance of organic light-emitting diodes fabricated on Al-doped ZnO anodes incorporating a homogeneous Al-doped ZnO buffer layer grown by atomic layer deposition.

    PubMed

    Choi, Yong-June; Gong, Su Cheol; Park, Chang-Sun; Lee, Hong-Sub; Jang, Ji Geun; Chang, Ho Jung; Yeom, Geun Young; Park, Hyung-Ho

    2013-05-01

    In this work, we investigated the use of a homogeneous Al-doped zinc oxide (AZO) buffer layer to improve the performance of an organic light-emitting diode (OLED) device fabricated on an AZO anode. For this, 10-nm-thick AZO buffer layers with Al doping concentrations of 3.1, 4.1, and 5.1 at % were grown on 140-nm-thick AZO anode films containing 2.1 at % Al by atomic layer deposition. The electrical resistivity of the AZO anode with a homogeneous AZO buffer layer decreased with an increase in Al doping concentration up to 4.1 at %; however, the resistivity increased at higher doping concentrations in the AZO buffer layer. On the other hand, the work functions of the AZO anode with the AZO buffer layer containing various Al doping concentrations gradually increased with an increase in Al doping concentration from 3.1 to 5.1 at %. Therefore, the best film properties were obtained for an AZO anode with an AZO buffer layer containing 4.1 at % Al, and the work function value for this film was 4.64 eV. The highest luminance and current efficiency values were optimized to be 20290 cd/m(2) and 13.4 cd/A, respectively, with the OLED device composed of a DNTPD/TAPC/Bebq2:10% doped RP-411/Bphen/LiF/Al structure on an AZO anode with an AZO buffer layer containing 4.1 at % Al.

  2. Electric double layer capacitors employing nitrogen and sulfur co-doped, hierarchically porous graphene electrodes with synergistically enhanced performance

    NASA Astrophysics Data System (ADS)

    Kannan, Aravindaraj G.; Samuthirapandian, Amaresh; Kim, Dong-Won

    2017-01-01

    Hierarchically porous graphene nanosheets co-doped with nitrogen and sulfur are synthesized via a simple hydrothermal method, followed by a pore activation step. Pore architectures are controlled by varying the ratio of chemical activation agents to graphene, and its influence on the capacitive performance is evaluated. The electric double layer capacitor (EDLC) assembled with optimized dual-doped graphene delivers a high specific capacitance of 146.6 F g-1 at a current density of 0.8 A g-1, which is higher than that of cells with un-doped and single-heteroatom doped graphene. The EDLC with dual-doped graphene electrodes exhibits stable cycling performance with a capacitance retention of 94.5% after 25,000 cycles at a current density of 3.2 A g-1. Such a good performance can be attributed to synergistic effects due to co-doping of the graphene nanosheets and the presence of hierarchical porous structures.

  3. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus.

    PubMed

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A H Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-12

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm(2) V(-1) s(-1) after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  4. Hydrogen storage in Li-doped fullerene-intercalated hexagonal boron nitrogen layers

    NASA Astrophysics Data System (ADS)

    Cheng, Yi-Han; Zhang, Chuan-Yu; Ren, Juan; Tong, Kai-Yu

    2016-10-01

    New materials for hydrogen storage of Li-doped fullerene (C20, C28, C36, C50, C60, C70)-intercalated hexagonal boron nitrogen ( h-BN) frameworks were designed by using density functional theory (DFT) calculations. First-principles molecular dynamics (MD) simulations showed that the structures of the C n -BN ( n = 20, 28, 36, 50, 60, and 70) frameworks were stable at room temperature. The interlayer distance of the h-BN layers was expanded to 9.96-13.59 Å by the intercalated fullerenes. The hydrogen storage capacities of these three-dimensional (3D) frameworks were studied using grand canonical Monte Carlo (GCMC) simulations. The GCMC results revealed that at 77 K and 100 bar (10 MPa), the C50-BN framework exhibited the highest gravimetric hydrogen uptake of 6.86 wt% and volumetric hydrogen uptake of 58.01 g/L. Thus, the hydrogen uptake of the Li-doped C n -intercalated h-BN frameworks was nearly double that of the non-doped framework at room temperature. Furthermore, the isosteric heats of adsorption were in the range of 10-21 kJ/mol, values that are suitable for adsorbing/desorbing the hydrogen molecules at room temperature. At 193 K (-80 °C) and 100 bar for the Li-doped C50-BN framework, the gravimetric and volumetric uptakes of H2 reached 3.72 wt% and 30.08 g/L, respectively.

  5. Single layer graphene band hybridization with silver nanoplates: Interplay between doping and plasmonic enhancement

    NASA Astrophysics Data System (ADS)

    Syed, Salmaan R.; Lim, Guh-Hwan; Flanders, Stuart J.; Taylor, Adam B.; Lim, Byungkwon; Chon, James W. M.

    2016-09-01

    In this paper, we report single layer graphene (SLG) hybridized with silver nanoplates, in which nanoplates act as either a charge doping or a field enhancement source for the SLG Raman spectrum. Surprisingly, the stiffening of both G and 2D peaks of more than 10 cm-1 was observed with no plasmonic enhancement of peaks, indicating that p-doping from nanoplates on SLG is occurring. Such observation is explained in terms of the contact separation distance between the graphene and the silver nanoplates being enough (˜4 Å) to cause a Fermi level shift in graphene to allow p-doping. When nanoplates were modified in shape with laser irradiation by either photothermal plasmon printing or laser induced ablation, the charge doping was lifted and the strong plasmonic enhancement of Raman signals was observed, indicating that the separation distance is increased. Further, when the nanoplates are oxidized, the two effects on the Raman bands of SLG are turned off, returning the Raman signals back to the original SLG state.

  6. Valence band structures of heavily doped strained GexSi1 - x layers

    NASA Astrophysics Data System (ADS)

    Fu, Y.; Jain, S. C.; Willander, M.; Loferski, J. J.

    1993-07-01

    Valence-band structure and density-of-state (DOS) effective mass are calculated for heavily p-type-doped Si and strained GexSi1-x layers grown on (100) Si. At low doping values calculations have been made by earlier authors and the results agree with the published values of DOS mass by these authors. The Fermi energy EF measured from the valence-band edge has been calculated using our values of DOS effective mass. At 1020 cm-3 doping level the value is 77.3 meV compared with 80 meV determined from luminescence experiments. The value of EF obtained by using the normally accepted value of 0.57 for the hole effective mass in Si is more than the experimental value by a factor about 2, i.e., the calculations reduce the discrepancy from 100% to less than 4%. The effective barrier height of (p+-Ge0.42Si0.58)/(p-Si) internal photoemission photo detector has also been calculated using our calculated value of the DOS hole mass. The calculated value is in reasonable agreement with the experimental value. The values of the band parameters and of deformation potentials are known only for small values of k and energies. These values have been used at large doping concentrations where k and energy are also large. The agreement of the theory with experiment suggests that the values of the parameters are valid approximately at higher energies also.

  7. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

    NASA Astrophysics Data System (ADS)

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A. H. Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-01

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm2 V-1 s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  8. White light emission from GaN stack layers doped by different rare-earth metals

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Liu, Chang

    2015-02-01

    Experimental progress of electroluminescence devices (ELDs) employing GaN doped with rare-earth metals had been significantly made targeting RGB displays. However, reports on the theoretical models to design the devices and the applications were limited. Our previous paper proposed a device model using the quantum collision theory and Judd-Ofelt approximation to design the ELDs for white light illumination. In the present study, the model is modified by considering the light extraction efficiency and optical loss during propagating in the films. To improve the luminous efficiency, an ELD with three stack layers of GaN:Tm/GaN:Er/GaN:Eu is proposed and designed. The model predicts that the color of the integrated light can be controlled by applied voltage, thickness of each doping layer and doping concentrations of the rare earth metals. The luminous efficacy of white light emission at a bias of -100 V is calculated to be 274 lm/W, which is much higher than that of fluorescent lumps. The proposed ELD will open a door to efficient solid-state lighting.

  9. Chromatic-stability white organic light emitting diodes based on phosphorescence doped electron transport layer

    NASA Astrophysics Data System (ADS)

    Zhou, Pengchao; Wang, Feifei; Lin, Hong; Li, Xifeng; Tong, Liang; Wei, Na; Gao, Zhixiang; Wei, Bin

    2014-04-01

    The influence of fac-tris(2-phenylpyridine)iridium [Ir(ppy)3] doped into electron transport layer was investigated by a series of electron-only devices, and the mechanism of the reduced field-dependent electron-transporting properties was also discussed. Utilizing the method of optimized doping concentration, a hybrid white organic light emitting diode with high efficiency, low efficiency roll-off and stable spectra was fabricated. Organic layer doped Ir(ppy)3 serves two functions: emit supernumerary green light with excess holes when the applied bias are low; weaken electron-transport ability when the bias increase. Both the two functions can improve the carrier balance and confine the exciton recombination region. For Device B, the maximum current efficiency and power efficiency reach 37.4 cd/A and 28.6 lm/W, respectively. The Commision Internationale de l’Éclairage (CIE) coordinates vary slightly from (0.48, 0.43) at 1.1 cd/m2 to (0.46, 0.43) at 18,600 cd/m2.

  10. Influence of p-doping hole transport layer on the performance of organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Khan, M. A.; Xu, Wei; Khizar-ul-Haq; Bai, Yu; Jiang, X. Y.; Zhang, Z. L.; Zhu, W. Q.

    2008-05-01

    We have demonstrated devices based on a p-doped layer consisting of 4,4',4''-tris(3-methylphenylphenylamono) triphenylamine (m-MTDATA) and tetrafluro-tetracyano-quinodimethane (F4-TCNQ) as a hole transport layer (HTL). The typical device structure is ITO/m-MTDATA: x% F4-TCNQ (40 nm)/N, N'-bis-[1-naphthy(-N, N' diphenyl-1,1'-biphenyl-4,4'-diamine)] (NPB) (10 nm)/tris (8-hydroxyquinoline) aluminum (Alq3) (50 nm)/LiF (10 nm)/Al (100 nm). Hole-only devices, where the current only consists of holes, are fabricated to observe the apparent improvement in the conductivity of the p-doped layers. We have observed that such layers lead to a striking improvement of the electrical properties of organic light-emitting devices. In particular, the electroluminescent onset voltage is observed to decrease continuously with increasing doping ratio and is greatly reduced compared to diodes with undoped layers. We have seen that the driving voltage of device 3 (m-MTDATA:4% F4-TCNQ) is reduced ~56% as compared with that of the control device (undoped). This improvement has been attributed to the increased conductivity of the p-doping hole transport layer. It is found that the current efficiency also decreases with increasing doping ratio. This can be attributed to the charge imbalance in the emission layer due to the excess hole injection.

  11. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO{sub 2} thin films grown by the atomic layer deposition technique

    SciTech Connect

    Kassmi, M.; Pointet, J.; Gonon, P. Bsiesy, A.; Vallée, C.; Jomni, F.

    2016-06-28

    Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreases the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MV{sub rms}/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.

  12. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Pointet, J.; Gonon, P.; Bsiesy, A.; Vallée, C.; Jomni, F.

    2016-06-01

    Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO2 rutile films which are deposited on RuO2 by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz-100 kHz range, for ac electric fields up to 1 MVrms/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreases the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MVrms/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.

  13. Microscopic mechanism of the tunable band gap in potassium-doped few-layer black phosphorus

    NASA Astrophysics Data System (ADS)

    Kim, Sun-Woo; Jung, Hyun; Kim, Hyun-Jung; Choi, Jin-Ho; Wei, Su-Huai; Cho, Jun-Hyung

    2017-08-01

    Tuning band gaps in two-dimensional (2D) materials is of great interest for the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was experimentally observed to show a widely tunable band gap by means of the deposition of potassium (K) atoms on the surface, thereby allowing great flexibility in the design and optimization of electronic and optoelectronic devices. Here, based on density-functional theory calculations, we demonstrates that the donated electrons from K dopants are mostly localized in the topmost BP layer and this surface charging efficiently screens the K ion potential. It is found that, as the K doping increases, the extreme surface charging and its screening of K atoms shift the conduction bands down in energy, i.e., towards a higher binding energy, because they have more charge near the surface, while it has little influence on the valence bands having more charge in the deeper layers. This result provides a different explanation for the observed tunable band gap compared to the previously proposed giant Stark effect where a vertical electric field from the positively ionized K overlayer to the negatively charged BP layers shifts the conduction band minimum Γ1 c (valence band minimum Γ8 v) downwards (upwards). The present prediction of Γ1 c and Γ8 v as a function of the K doping reproduces well the widely tunable band gap, anisotropic Dirac semimetal state, and band-inverted semimetal state, as observed in an angle-resolved photoemission spectroscopy experiment. Our findings shed new light on a route for tunable band gap engineering of 2D materials through the surface doping of alkali metals.

  14. Stable Boundary Layer Education (STABLE) Final Campaign Summary

    SciTech Connect

    Turner, David D.

    2016-03-01

    The properties of, and the processes that occur in, the nocturnal stable boundary layer are not well understood, making it difficult to represent adequately in numerical models. The nocturnal boundary layer often is characterized by a temperature inversion and, in the Southern Great Plains region, a low-level jet. To advance our understanding of the nocturnal stable boundary layer, high temporal and vertical resolution data on the temperature and wind properties are needed, along with both large-eddy simulation and cloud-resolving modeling.

  15. Enhancement of carrier mobility in thin Ge layer by Sn co-doping

    NASA Astrophysics Data System (ADS)

    Prucnal, S.; Liu, F.; Berencén, Y.; Vines, L.; Bischoff, L.; Grenzer, J.; Andric, S.; Tiagulskyi, S.; Pyszniak, K.; Turek, M.; Drozdziel, A.; Helm, M.; Zhou, S.; Skorupa, W.

    2016-10-01

    We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.

  16. The effects of layering in ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2014-08-01

    Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  17. First-principles study of the noble metal-doped BN layer

    SciTech Connect

    Zhou, Yungang; Yang, Ping; Sun, Xin; Wang, Zhiguo; Zu, Xiaotao T.; Gao, Fei

    2011-04-18

    Intriguing electronic and magnetic properties of BN layer with noble metal (Pd, Pt, Ag and Au) doping are obtained by first-principles calculations. Adsorbed Pd (or Pt) reduces the band gap of BN sheet owing to the induction of impurity states. The unpaired electrons in the Ag (or Au)-adsorbed and the Pd (or Pt)-substituted BN layers are polarized, and thus exhibit a magnetic moment of 1.0 µB, leading to these BN configurations to be magnetic semiconductors. The half-metallic feature of the Ag-substituted BN layer, along with the delocalization of spin states, renders this configuration an excellent spin filter material. Thus, these findings offer a unique opportunity for developing BN-based nanoscale devices.

  18. Manufacture of silicon-based devices having disordered sulfur-doped surface layers

    DOEpatents

    Carey, III, James Edward; Mazur, Eric

    2008-04-08

    The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

  19. Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide

    SciTech Connect

    Lehnert, Wolfgang; Ruhl, Guenther; Gschwandtner, Alexander

    2012-01-15

    Among many promising high-k dielectrics, TiO{sub 2} is an interesting candidate because of its relatively high k value of over 40 and its easy integration into existing semiconductor manufacturing schemes. The most critical issues of TiO{sub 2} are its low electrical stability and its high leakage current density. However, doping TiO{sub 2} with Al has shown to yield significant improvement of layer quality on Ru electrodes [S. K. Kim et al., Adv. Mater. 20, 1429 (2008)]. In this work we investigated if atomic layer deposition (ALD) of Al doped TiO{sub 2} is feasible in a batch system. Electrical characterizations were done using common electrode materials like TiN, TaN, or W. Additionally, the effect of plasma enhanced processing in this reactor was studied. For this investigation a production batch ALD furnace has been retrofitted with a plasma source which can be used for post deposition anneals with oxygen radicals as well as for directly plasma enhanced ALD. After evaluation of several Ti precursors a deposition process for AlTiO{sub x} with excellent film thickness and composition uniformity was developed. The effects of post deposition anneals, Al{sub 2}O{sub 3} interlayers between electrode and TiO{sub 2}, Al doping concentration, plasma enhanced deposition and electrode material type on leakage current density are shown. An optimized AlTiO{sub x} deposition process on TaN electrodes yields to leakage current density of 5 x 10{sup -7} A/cm{sup 2} at 2 V and k values of about 35. Thus, it could be demonstrated that a plasma enhanced batch ALD process for Al doped TiO{sub 2} is feasible with acceptable leakage current density on a standard electrode material.

  20. Improving the performance of perovskite solar cells with glycerol-doped PEDOT:PSS buffer layer

    NASA Astrophysics Data System (ADS)

    Jian-Feng, Li; Chuang, Zhao; Heng, Zhang; Jun-Feng, Tong; Peng, Zhang; Chun-Yan, Yang; Yang-Jun, Xia; Duo-Wang, Fan

    2016-02-01

    In this paper, we investigate the effects of glycerol doping on transmittance, conductivity and surface morphology of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate)) (PEDOT:PSS) and its influence on the performance of perovskite solar cells. . The conductivity of PEDOT:PSS is improved obviously by doping glycerol. The maximum of the conductivity is 0.89 S/cm when the doping concentration reaches 6 wt%, which increases about 127 times compared with undoped. The perovskite solar cells are fabricated with a configuration of indium tin oxide (ITO)/PEDOT:PSS/CH3NH3PbI3/PC61BM/Al, where PEDOT:PSS and PC61BM are used as hole and electron transport layers, respectively. The results show an improvement of hole charge transport as well as an increase of short-circuit current density and a reduction of series resistance, owing to the higher conductivity of the doped PEDOT:PSS. Consequently, it improves the whole performance of perovskite solar cell. The power conversion efficiency (PCE) of the device is improved from 8.57% to 11.03% under AM 1.5 G (100 mW/cm2 illumination) after the buffer layer has been modified. Project supported by the National Natural Science Foundation of China (Grant Nos. 61264002, 61166002, 91333206, and 51463011), the Natural Science Foundation of Gansu Province, China (Grant No. 1308RJZA159), the New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0840), the Research Project of Graduate Teacher of Gansu Province, China (Grant No. 2014A-0042), and the Postdoctoral Science Foundation from Lanzhou Jiaotong University, China.

  1. Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO2 Nanorod Arrays as Electron Transfer Layer

    NASA Astrophysics Data System (ADS)

    Zhang, Zhen-Long; Li, Jun-Feng; Wang, Xiao-Li; Qin, Jian-Qiang; Shi, Wen-Jia; Liu, Yue-Feng; Gao, Hui-Ping; Mao, Yan-Li

    2017-01-01

    In this paper, N-doped TiO2 (N-TiO2) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO2 with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO2. To get an insight into the improvement, some investigations were performed. The structure was examined with X-ray powder diffraction (XRD), and morphology was examined by scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) and Tauc plot spectra indicated the incorporation of N in TiO2 nanorods. Absorption spectra showed higher absorption of visible light for N-TiO2 than un-doped TiO2. The N doping reduced the energy band gap from 3.03 to 2.74 eV. The photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra displayed the faster electron transfer from perovskite layer to N-TiO2 than to un-doped TiO2. Electrochemical impedance spectroscopy (EIS) showed the smaller resistance of device based on N-TiO2 than that on un-doped TiO2.

  2. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly.

  3. Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO2 Nanorod Arrays as Electron Transfer Layer.

    PubMed

    Zhang, Zhen-Long; Li, Jun-Feng; Wang, Xiao-Li; Qin, Jian-Qiang; Shi, Wen-Jia; Liu, Yue-Feng; Gao, Hui-Ping; Mao, Yan-Li

    2017-12-01

    In this paper, N-doped TiO2 (N-TiO2) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO2 with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO2. To get an insight into the improvement, some investigations were performed. The structure was examined with X-ray powder diffraction (XRD), and morphology was examined by scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) and Tauc plot spectra indicated the incorporation of N in TiO2 nanorods. Absorption spectra showed higher absorption of visible light for N-TiO2 than un-doped TiO2. The N doping reduced the energy band gap from 3.03 to 2.74 eV. The photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra displayed the faster electron transfer from perovskite layer to N-TiO2 than to un-doped TiO2. Electrochemical impedance spectroscopy (EIS) showed the smaller resistance of device based on N-TiO2 than that on un-doped TiO2.

  4. Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor

    NASA Astrophysics Data System (ADS)

    Brunner, F.; Bergunde, T.; Richter, E.; Kurpas, P.; Achouche, M.; Maaßdorf, A.; Würfl, J.; Weyers, M.

    2000-12-01

    In this work different approaches for carbon doping of GaAs in MOVPE are compared with respect to their growth- and device-related material properties. Doping levels up to 6×10 19 cm -3 and smooth surface morphologies are achieved with either intrinsically (TMG and AsH 3 or TMAs) or extrinsically (CBr 4) doped layers. Despite comparable structural and majority carrier properties differences in GaInP/GaAs-HBT device performance depending on base doping conditions are obtained. Devices with an intrinsically doped base layer (TMG+AsH 3) show superior transistor performance with a current gain to base sheet resistance ratio ( β/ Rsb) exceeding 0.5 for base thicknesses as large as 120 nm. The use of either CBr 4 or TMAs as base growth precursors results in reduced current gains ( β/ Rsb⩽0.3). It is shown that the achieved HBT current gain is directly related to recombination centers in the heavily doped base layer depending on doping method.

  5. Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

    NASA Astrophysics Data System (ADS)

    Fariza, A.; Lesnik, A.; Neugebauer, S.; Wieneke, M.; Hennig, J.; Bläsing, J.; Witte, H.; Dadgar, A.; Strittmatter, A.

    2017-07-01

    Semi-insulating GaN is a prerequisite for lateral high frequency and high power electronic devices to isolate the device region from parasitic conductive channels. The commonly used dopants for achieving semi-insulating GaN, Fe, and C cause distinct properties of GaN layers since the Fermi-level is located either above (Fe) or below (C) the midgap position. In this study, precursor-based doping of GaN in metalorganic vapor phase epitaxy is used at otherwise identical growth conditions to control the dopant concentrations in the layer. Using electric force microscopy, we have investigated the contact potentials of Fe- and C-doped samples with respect to a cobalt metal probe tip in dependence of on the dopant concentration. While in Fe-doped samples the sign of the contact potential is constant, a change from positive to negative contact potential values is observed at high carbon concentrations, indicating the shift of the Fermi-level below the midgap position. In vertical transport measurements, C-doped GaN layers with a dopant concentration of 4.6 × 1018 cm-3 exhibit up to 5 orders of magnitude lower dark current at room temperature and significantly lower temperature dependence than Fe-doped samples with a similar dopant concentration. Therefore, precursor-based carbon doping is the superior doping technique to achieve semi-insulating GaN.

  6. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  7. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    NASA Astrophysics Data System (ADS)

    Li, X.; Bergsten, J.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Rorsman, N.; Janzén, E.; Forsberg, U.

    2015-12-01

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 1018 cm-3) epitaxial layer closest to the substrate and a lower doped layer (3 × 1016 cm-3) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 1018 cm-3) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  8. Design of multi-porous layer for dye-sensitized solar cells by doping with TiO2 nanoparticles.

    PubMed

    Hsieh, Tung-Li; Chu, Ann-Kuo; Huang, Wen-Yao

    2013-01-01

    We propose a multi-layer dye-sensitized solar cell (DSSC). Conventional DSSC components use a singular TiO2 particle size and a mono-layer active layer, but we demonstrate a multi-layer and multi-scale TiO2 particle based DSSC. Doping with large TiO2 particles can produce light scattering inside the DSSC component. Light scattering effects reduce TiO2 absorption at wavelengths of 200-300 nm. The unabsorbed light zig-zags between the Pt back electrode layer and the substrate, and enhances the Ru-dye absorption. To enhance the scattering, we doped the active layer with 20 wt% of large diameter TiO2. The multi-layer DSSC increases efficiency by about 15% compared with standard DSSCs.

  9. Manganese oxide nanowires wrapped with nitrogen doped carbon layers for high performance supercapacitors.

    PubMed

    Li, Ying; Mei, Yuan; Zhang, Lin-Qun; Wang, Jian-Hai; Liu, An-Ran; Zhang, Yuan-Jian; Liu, Song-Qin

    2015-10-01

    In this study, manganese oxide nanowires wrapped by nitrogen-doped carbon layers (MnO(x)@NCs) were prepared by carbonization of poly(o-phenylenediamine) layer coated onto MnO2 nanowires for high performance supercapacitors. The component and structure of the MnO(x)@NCs were controlled through carbonization procedure under different temperatures. Results demonstrated that this composite combined the high conductivity and high specific surface area of nitrogen-doped carbon layers with the high pseudo-capacitance of manganese oxide nanowires. The as-prepared MnO(x)@NCs exhibited superior capacitive properties in 1 M Na2SO4 aqueous solution, such as high conductivity (4.167×10(-3) S cm(-1)), high specific capacitance (269 F g(-1) at 10 mV s(-1)) and long cycle life (134 F g(-1) after 1200 cycles at a scan rate of 50 mV s(-1)). It is reckoned that the present novel hybrid nanowires can serve as a promising electrode material for supercapacitors and other electrochemical devices.

  10. Final Technical Report: Grain Boundary Complexions and Transitions in Doped Silicon

    SciTech Connect

    Jian Luo

    2012-10-15

    This four-year research project has advanced the fundamental knowledge of grain boundary (GB) complexions (i.e., "two-dimensional interfacial phases") and associated GB "phase" transitions in several grounds. First, a bilayer interfacial phase, which had been directly observed by microscopy only in complex ceramic systems in prior studies, has been identified in simpler systems such as Au-doped Si and Bi-doped Ni in this study, where the interpretations of the their formation mechanisms and microscopic images are less equivocal. Second, convincing evidence for the existence of a first-order GB transition from a nominally "clean" GB to a bilayer adsorption interfacial phase has been revealed for Au-doped Si; the confirmation of the first-order nature of interfacial transitions at GBs, which was rare in prior studies, is scientifically significant and technologically important. Third, the bilayer interfacial phase discovered in Bi-doped Ni has been found to be the cause of the mysterious liquid metal embrittlement phenomenon in this system; the exact atomic level mechanism of this phenomenon has puzzled the materials and physics communities for over a century. Finally, significant advancements have been made to establish phenomenological thermodynamic models for GB complexions and transitions. Since GB complexions can control the transport, mechanical and physical properties of a broad range of metallic and ceramic materials, the fundamental knowledge generated by this project can have broad impacts on materials design in general. In this regard, understanding and controlling GB phase behaviors (complexions and transitions) can be an important component for the "Materials Genome" project.

  11. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  12. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  13. Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures.

    PubMed

    Sarau, George; Heilmann, Martin; Bashouti, Muhammad; Latzel, Michael; Tessarek, Christian; Christiansen, Silke

    2017-03-22

    While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

  14. Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

    SciTech Connect

    Wan, Zhixin; Kwack, Won-Sub; Lee, Woo-Jae; Jang, Seung-II; Kim, Hye-Ri; Kim, Jin-Woong; Jung, Kang-Won; Min, Won-Ja; Yu, Kyu-Sang; Park, Sung-Hun; Yun, Eun-Young; Kim, Jin-Hyock; Kwon, Se-Hun

    2014-09-15

    Highlights: • Ti doped ZnO films were prepared on Corning XG glass substrate by ALD. • The electrical properties and optical properties were systematically investigated. • An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance. - Abstract: Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10{sup −3} Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.

  15. Lower Atmospheric Boundary Layer Experiment (LABLE) Final Campaign Report

    SciTech Connect

    Klein, P; Bonin, TA; Newman, JF; Turner, DD; Chilson, P; Blumberg, WG; Mishra, S; Wainwright, CE; Carney, M; Jacobsen, EP; Wharton, S

    2015-11-01

    The Lower Atmospheric Boundary Layer Experiment (LABLE) included two measurement campaigns conducted at the Atmospheric Radiation Measurement (ARM) Southern Great Plains site in Oklahoma during 2012 and 2013. LABLE was designed as a multi-phase, low-cost collaboration among the University of Oklahoma, the National Severe Storms Laboratory, Lawrence Livermore National Laboratory, and the ARM program. A unique aspect was the role of graduate students in LABLE. They served as principal investigators and took the lead in designing and conducting experiments using different sampling strategies to best resolve boundary-layer phenomena.

  16. Ultrafast Nonlinear Response of Bulk Plasmons in Highly Doped ZnO Layers

    NASA Astrophysics Data System (ADS)

    Tyborski, Tobias; Kalusniak, Sascha; Sadofev, Sergey; Henneberger, Fritz; Woerner, Michael; Elsaesser, Thomas

    2015-10-01

    Longitudinal bulk plasmons in an n -doped ZnO layer system are studied by two-color femtosecond pump-probe spectroscopy in the midinfrared. The optical bulk plasmon resonance identified in linear reflectivity spectra undergoes a strong redshift and a limited broadening upon intraband excitation of electrons. The nonlinear changes of plasmon absorption decay on a time scale of 2 ps and originate from the intraband redistribution of electrons. Theoretical calculations explain the plasmon redshift by the transient increase of the ensemble-averaged electron mass and the concomitantly reduced plasma frequency in the hot electron plasma. The observed bulk plasmon nonlinearity holds strong potential for applications in plasmonics.

  17. On the radiation resistance of planar Gunn diodes with δ-doped layers

    SciTech Connect

    Obolenskaya, E. S. Churin, A. Yu.; Obolensky, S. V.; Murel, A. V.; Shashkin, V. I.

    2015-11-15

    The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of δ layers of doping impurities contributes to the higher radiation resistance of planar diodes by an order of magnitude compared to conventional Gunn diodes. The results of this study make it possible to formulate methodical guidelines to reduce the amount of computational and experimental studies without a considerable decrease in their informativity.

  18. Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

    SciTech Connect

    An Jihwan; Beom Kim, Young; Sun Park, Joong; Hyung Shim, Joon; Guer, Turgut M.; Prinz, Fritz B.

    2012-01-15

    The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals.

  19. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  20. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  1. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  2. Spin and charge excitations in artificial hole- and electron-doped infinite layer cuprate superconductors

    NASA Astrophysics Data System (ADS)

    Dellea, G.; Minola, M.; Galdi, A.; Di Castro, D.; Aruta, C.; Brookes, N. B.; Jia, C. J.; Mazzoli, C.; Moretti Sala, M.; Moritz, B.; Orgiani, P.; Schlom, D. G.; Tebano, A.; Balestrino, G.; Braicovich, L.; Devereaux, T. P.; Maritato, L.; Ghiringhelli, G.

    2017-09-01

    The asymmetry between electron and hole doping in high critical-temperature superconducting (HTS) cuprates is key information for the understanding of Cooper pair formation mechanisms. Despite intensive studies on different cuprates, a comprehensive description of related magnetic and charge excitations is still fragmentary. In the present work, artificial cuprates were used to cover the entire phase diagram within the same HTS family. In particular, Cu L3-edge resonant inelastic x-ray scattering (RIXS) measurements were performed on artificial n - and p -type infinite layer (IL) epitaxial films. Beside several similarities, RIXS spectra show noticeable differences in the evolution, with doping level, of magnetic and charge intensity and damping. Compatible trends can be found in spectra measured on bulk cuprates, as well as in theoretical calculations of the spin dynamical structure factor S (q ,ω ) . The findings give a deeper insight into the evolution of collective excitations across the cuprate phase diagram, and on underlying general features, only connected to the doping type. Moreover, they pave the way to the exploration of general properties of HTS physics over a broad range of conditions, by means of artificial compounds not constrained by the thermodynamic limitations governing the chemical stability of bulk materials.

  3. Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs

    NASA Astrophysics Data System (ADS)

    Lee, K. P.; Dabiran, A.; Chow, P. P.; Pearton, S. J.; Ren, F.

    2003-06-01

    The effects of base doping and thickness on dc current gain, collector-emitter saturation voltage, saturation current and collector-emitter breakdown voltage of GaN/AlGaN heterojunction bipolar transistors were investigated using a drift-diffusion transport model. Given the low ionization efficiency of Mg acceptors in the base, it is important to design structures that avoid depletion of the base layer. The presence of a resistive base causes current to flow directly to the collector, severely reducing gain. The effect of emitter doping on current gain and of collector doping on the breakdown voltage of the C-E junction were also investigated.

  4. Zinc-doped dentin adhesive for collagen protection at the hybrid layer.

    PubMed

    Osorio, Raquel; Yamauti, Monica; Osorio, Estrella; Román, Julio S; Toledano, Manuel

    2011-10-01

    The aim of the study was to ascertain whether the addition of zinc to adhesives may decrease metalloproteinase-mediated collagen degradation without affecting bonding efficacy. Human dentin beams were treated with phosphoric acid, with Clearfil SE Bond Primer or with Clearfil SE Bond Primer plus ZnCl(2) (2 wt%). Acid-etched dentin was infiltrated with Single Bond, Single Bond plus ZnCl(2) (2 wt%), or Single Bond plus ZnO nanoparticles (10 wt%), and Clearfil SE Bond-primed dentin was infiltrated with Clearfil SE Bonding resin, Clearfil SE-Bonding resin with ZnCl(2) (2 wt%), or Clearfil SE-Bonding resin with ZnO nanoparticles (10 wt%). The C-terminal telopeptide concentrations were determined 24 h, and 1 and 4 wk after treatment. Microtensile bond strength to dentin was determined for the tested adhesives. Matrix metalloproteinases-mediated collagen degradation occurred in acid-etched and SE-primed dentin. Resin infiltration decreased collagen degradation. Lower collagen degradation was found for SE Bond than for Single Bond. Zinc-doped Single Bond resin always reduced collagen degradation, the ZnO particles being more effective than ZnCl(2) . Zinc-doped SE Bond reduced the liberation of C-terminal telopeptide only at 24 h. Bond strength to dentin was not decreased when Zn-doped resins were employed, except when ZnCl(2) was added to SE Primer. Zinc-doped resin reduced collagen degradation in Single Bond hybrid layers, but did not affect bond strength. The addition of zinc to SE Bond had no beneficial effects.

  5. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    PubMed

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material.

  6. Microstructure of the Native Oxide Layer on Ni and Cr-doped Ni Nanoparticles

    SciTech Connect

    Wang, Chong M.; Baer, Donald R.; Bruemmer, Stephen M.; Engelhard, Mark H.; Bowden, Mark E.; Sundararajan, J. A.; Qiang, You

    2011-10-01

    Metallic or alloy nanoparticles exposed to air at room temperature will be instantaneously oxidized and covered by an oxide layer. However, for most cases, the true structural nature of the oxide layer formed at this stage is hard to determine. In this paper, we report the structure, morphology, and electronic structure (the density of state of both valence and conduction bands measured by a combination of XPS and EELS) of pure Ni and Cr-doped Ni nanoparticles synthesized using a cluster deposition process. Structural characterization carried out at the atomic level using aberration corrected high resolution transmission electron microscopy (HRTEM) in combination with electron and x-ray diffractions reveals that both pure Ni and Cr-doped Ni particles exposed to air at room temperature similarly possesses a core-shell structure of metal core covered by an oxide layer of typically 1.6 nm in thickness. There exists a critical size of ~ 6 nm, below which the particle is fully oxidized. The oxide particle corresponds to the rock-salt structured NiO and is faceted on the (001) planes. XPS of O-1s shows a strong peak that is attributed to (OH)-, which in combination with the atomic level HRTEM imaging indicates that the very top layer of the oxide is hydrolyzed as Ni(OH)2. Chemical composition analysis using EDS, EELS, and XPS indicates that the Cr dopant at the level of ~ 5at% forms solid solution with the Ni lattice. The Cr shows no segregation on the surface or preferential oxidation during the initial oxidation.

  7. Optical detection of strain and doping inhomogeneities in single layer MoS2

    NASA Astrophysics Data System (ADS)

    Michail, A.; Delikoukos, N.; Parthenios, J.; Galiotis, C.; Papagelis, K.

    2016-04-01

    Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge concentration, conformational ripples, and residual mechanical strain. In this work, we employed spatially resolved Raman and photoluminescence (PL) images to investigate strain and doping inhomogeneities in a single layer exfoliated molybdenum disulphide crystal. We have found that correlations between the spectral parameters of the most prominent Raman bands A1' and E' enable us to decouple and quantify strain and charge doping effects. In comparison with Atomic Force Microscopy (AFM) topography, we show that the spatial distribution of the position of the A- -trion PL peak is strain sensitive and its linewidth can capture features smaller than the laser spot size. The presented optical analysis may have implications in the development of high-quality devices based on two-dimensional materials since structural and electronic modifications affect considerably their carrier mobility and conductivity.

  8. Simulation of hole-mobility in doped relaxed and strained Ge layers

    NASA Astrophysics Data System (ADS)

    Watling, Jeremy R.; Riddet, Craig; Chan, Morgan Kah H.; Asenov, Asen

    2010-11-01

    As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected.

  9. Strain and defects in Si-doped (Al)GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Forghani, Kamran; Schade, Lukas; Schwarz, Ulrich T.; Lipski, Frank; Klein, Oliver; Kaiser, Ute; Scholz, Ferdinand

    2012-11-01

    Si is the most common dopant in (Al)GaN based devices acting as a donor. It has been observed that Si induces tensile strain in (Al)GaN films, which leads to an increasing tendency for cracking of such films with the increase of Si content and/or the increase of Al content. Based on x-ray investigations, the Si-doped films have a larger in-plane lattice constant than their undoped buffer layers, indicating involvement of a mechanism other than the change of lattice constants expected from an alloying effect. In this work, we present a model about Si dislocation interaction while debating other proposed models in the literature. According to our model, Si atoms are attracted to the strain dipole of edge-type dislocations in (Al)GaN films. It is expected that Si is more incorporated on that side of the dislocation, which is under compression leading to the formation of off-balanced dipoles with reduced compressive component. In response to such off-balanced dipoles—appearing as tensile dominant strain dipoles—the dislocation lines climb in order to accommodate the excess tensile strain. However, this dislocation climb mechanism is hindered by forces exerted by vacancies created due to the climb process. Accordingly, we have observed a lower strain level in our Si doped layers when they contain fewer dislocations. These findings were further supported by x-ray diffraction, transmission electron microscopy, and micro-photoluminescence investigations.

  10. Highly Stable and Effective Doping of Graphene by Selective Atomic Layer Deposition of Ruthenium.

    PubMed

    Kim, Minsu; Kim, Ki-Ju; Lee, Seung-Joon; Kim, Hyun-Mi; Cho, Seong-Yong; Kim, Min-Sik; Kim, Soo-Hyun; Kim, Ki-Bum

    2017-01-11

    The sheet resistance of graphene synthesized by chemical vapor deposition is found to be significantly reduced by the selective atomic layer deposition (ALD) of Ru onto defect sites such as wrinkles and grain boundaries. With 200 ALD cycles, the sheet resistance is reduced from ∼500 to <50 Ω/sq, and the p-type carrier density is drastically increased from 10(13) to 10(15) cm(-2). At the same time, the carrier mobility is reduced from ∼670 to less than 100 cm(2) V(-1) s(-1). This doping of graphene proved to be very stable, with the electrical properties remaining unchanged over eight weeks of measurement. Selective deposition of Ru on defect sites also makes it possible to obtain a graphene film that is both highly transparent and electrically conductive (e.g., a sheet resistance of 125 Ω/sq with 92% optical transmittance at 550 nm). Highly doped graphene layers achieved by Ru ALD are therefore expected to provide a viable basis for transparent conducting electrodes.

  11. Optical detection of strain and doping inhomogeneities in single layer MoS{sub 2}

    SciTech Connect

    Michail, A.; Delikoukos, N.; Papagelis, K. E-mail: kpapag@upatras.gr

    2016-04-25

    Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge concentration, conformational ripples, and residual mechanical strain. In this work, we employed spatially resolved Raman and photoluminescence (PL) images to investigate strain and doping inhomogeneities in a single layer exfoliated molybdenum disulphide crystal. We have found that correlations between the spectral parameters of the most prominent Raman bands A{sub 1}′ and E′ enable us to decouple and quantify strain and charge doping effects. In comparison with Atomic Force Microscopy (AFM) topography, we show that the spatial distribution of the position of the A{sup −} -trion PL peak is strain sensitive and its linewidth can capture features smaller than the laser spot size. The presented optical analysis may have implications in the development of high-quality devices based on two-dimensional materials since structural and electronic modifications affect considerably their carrier mobility and conductivity.

  12. Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers

    NASA Astrophysics Data System (ADS)

    Uchiyama, Yasuhito; Nishino, Hironori; Matsukura, Yusuke; Miyatake, Tetsuya; Yamamoto, Kousaku; Fujii, Toshio

    2002-08-01

    We investigated the behavior of the dark current (Id) in quantum well infrared photodetectors (QWIPs) in which the barrier layers were selectively doped instead of the well layers. Because the selective doping bends the conduction band (CB) edge in the portion of the barrier near the interface, the mechanism by which carriers in the wells can be emitted over the barriers, i.e. thermal emission and tunneling through this portion of the barrier, could be emphasized. We first confirmed that selectively doping the barrier layers clearly affects the Id-V characteristics. Then, by evaluating the activation energy obtained from the temperature dependence of Id, we found that the Poole-Frenkel emission (PFE) mechanism and the thermal-assisted tunneling (TAT)-like mechanism are dominant in the lower bias and higher bias regions, respectively.

  13. Tuning the Fermi-level of TiO2 mesoporous layer by lanthanum doping towards efficient perovskite solar cells.

    PubMed

    Gao, Xiao-Xin; Ge, Qian-Qing; Xue, Ding-Jiang; Ding, Jie; Ma, Jing-Yuan; Chen, Yao-Xuan; Zhang, Bao; Feng, Yaqing; Wan, Li-Jun; Hu, Jin-Song

    2016-09-29

    Tuning the band alignment is proved to be an effective way to facilitate carrier transportation and thus enhance the power conversion efficiency (PCE) of solar cells. Doping the compact layer with metal ions or modifying the interfaces among functional layers in perovskite solar cells (PSCs) can appreciably improve the PCE of PSCs. Inspired by the rare earth elemental doping of TiO2, which has witnessed the success in photocatalysis and dye-sensitized solar cells, we firstly demonstrated here that La(3+) doping in the mesoporous TiO2 layer of a mesostructured PSC can tune its Fermi level and thus significantly enhance the device PCE. Systematic analysis reveals that doping La(3+) into TiO2 raises the Fermi level of TiO2 through scavenging oxygen and inducing vacancies, which subsequently increases the open circuit voltage and the fill factor while reducing the series resistance of the PSC using La(3+)-doped TiO2 as a mesoporous layer. As a result, a PCE of 15.42% is achieved, which is appreciably higher than the PCE of a device with undoped TiO2 (12.11%).

  14. Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

    SciTech Connect

    Islam, A. Z. M. Touhidul; Jung, D. W.; Noh, J. P.; Otsuka, N.

    2009-05-01

    Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

  15. Carbon transport in the bottom boundary layer. Final report

    SciTech Connect

    Lohrenz, S.E.; Asper, V.L.

    1997-09-01

    The authors objective was to characterize distributions of chloropigment fluorescence in relation to physical processes in the benthic boundary layer in support of the Department of Energy (DOE) Ocean Margins Program`s (OMP) goal of quantifying carbon transport across the continental shelf. Their approach involved participation in the Ocean Margins Program (OMP) field experiment on the continental shelf off Cape Hatteras by conducting multi-sensor fluorescence measurements of photosynthetic pigments. Specific tasks included (1) pre- and post-deployment calibration of multiple fluorescence sensors in conjunction with Woods Hole personnel; (2) collection and analysis of photosynthetic pigment concentrations and total particulate carbon in water column samples to aid in interpretation of the fluorescence time-series during the field experiment; (3) collaboration in the analysis and interpretation of 1994 and 1996 time-series data in support of efforts to quantify pigment and particulate organic carbon transport on the continental shelf off Cape Hatteras. This third component included analysis of data obtained with a multi-sensor fiber-optic fluorometer in the benthic boundary layer of the inner shelf off Cape Hatteras during summer 1994.

  16. Radionuclide separations using pillared layered materials. Final report

    SciTech Connect

    Clearfield, A.

    1995-08-31

    The objective of this project is to prepare an all inorganic strontium specific sorbent or ion exchanger for the removal of highly alkaline nuclear waste solutions. A series of clays and layered titanates were pillared and calcined to convert their essentially two dimensional structure to three dimensional porous structures with high surface areas. The pillaring agents were alumina, zirconia, chromia and silica based. The pillared clays, particularly those containing Zr pillars, achieved moderate (Kd as high at 13,700 ml/g with V:m = 28) selectivities for Sr{sup 2+}. In contrast, the silica pillared titanates showed exceptional affinities for Sr{sup 2+} with Kd values in excess of 100,000 ml/g in 5M NaNO{sup 3} + 1M NaOH. These latter results suggest a more detailed study of the pillared titanates in the presence of simulants closely resembling real waste solutions.

  17. Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

    SciTech Connect

    Wang, Chenggong; Wang, Congcong; Kauppi, John; Liu, Xiaoliang; Gao, Yongli

    2015-08-28

    Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

  18. Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate

    NASA Astrophysics Data System (ADS)

    Krukovskyi, R.; Mykhashchuk, Y.; Kost, Y.; Krukovskyi, S.; Saldan, I.

    2017-04-01

    Epitaxial structures based on InP are widely used to manufacture a number of devices such as microwave transistors, light-emitting diodes, lasers and Gunn diodes. However, their temporary instability caused by heterogeneity of resistivity along the layer thickness and the influence of various external or internal factors prompts the need for the development of a new reliable technology for their preparation. Weak doping by Yb, Al and Sn together with modulation of the cooling rate applied to prepare InP epitaxial layers is suggested to be adopted within the liquid phase epitaxy (LPE) method. The experimental results confirm the optimized conditions created to get a uniform electron concentration in the active n-InP layer. A sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP epitaxial structure was observed experimentally at the proposed modulated cooling rate of 0.3 °С-1.5 °С min-1. The proposed technological method can be used to control the electrical and physical properties of InP epitaxial layers to be used in Gunn diodes.

  19. The Radar Effects of Perchlorate-Doped Ice in the Martian Polar Layered Deposits

    NASA Astrophysics Data System (ADS)

    Stillman, D.; Winebrenner, D. P.; Grimm, R. E.; Pathare, A.

    2010-12-01

    The presence of perchlorate in soil at near-polar latitudes on Mars suggests that dust in the ice of the North Polar Layered Deposits (NPLD) may introduce perchlorate impurities to that ice. Because eutectic temperatures of perchlorate salts range as low as 206 K (for magnesium perchlorate), perchlorate doping of NPLD ice may result in grain-scale liquid veins and softening of ice rheology at temperatures comparable to those computed for the base of the NPLD in the present climate. Any such softening would be important for understanding how processes including ice flow have shaped the NPLD. Observable consequences of such softening, or of the combination of perchlorate doping and temperatures that could cause softening, are thus similarly important. In particular, the dielectric properties of perchlorate-laden ice in a temperature gradient will change relatively rapidly at the point in the gradient near the eutectic temperature. Here we investigate the radar reflectivity of such a eutectic transition in ice with a model in which perchlorate concentration is constant and temperature varies linearly with depth in the ice. We have conducted measurements of the complex permittivity of Mg and Na perchlorate-doped ice over a range of temperatures (183 - 273 K) and concentrations. Below the eutectic temperature, the perchlorate-doped ice has electrical properties similar to that of choride-doped ice. However, above the eutectic temperature, some of the ice melts forming liquid at triple junctions. At concentrations above 3 mM, the liquid at triple junctions become connected forming brine channels, which greatly increase the dc conductivity and radar attenuation. At concentrations below 3 mM, the liquid at triple junctions are not connected and do not affect the dc conductivity. However, the liquid H2O molecules are able to rotate their permanent dipole at radar frequencies, thus causing an increase in radar attenuation. The MARSIS and SHARAD attenuation rates increase

  20. Final report for CCS cross-layer reliability visioning study

    SciTech Connect

    Quinn, Heather M; Dehon, Andre; Carter, Nicj

    2010-12-20

    The geometric rate of improvement of transistor size and integrated circuit performance known as Moore's Law has been an engine of growth for our economy, enabling new products and services, creating new value and wealth, increasing safety, and removing menial tasks from our daily lives. Affordable, highly integrated components have enabled both life-saving technologies and rich entertainment applications. Anti-lock brakes, insulin monitors, and GPS-enabled emergency response systems save lives. Cell phones, internet appliances, virtual worlds, realistic video games, and mp3 players enrich our lives and connect us together. Over the past 40 years of silicon scaling, the increasing capabilities of inexpensive computation have transformed our society through automation and ubiquitous communications. Looking forward, increasing unpredictability threatens our ability to continue scaling integrated circuits at Moore's Law rates. As the transistors and wires that make up integrated circuits become smaller, they display both greater differences in behavior among devices designed to be identical and greater vulnerability to transient and permanent faults. Conventional design techniques expend energy to tolerate this unpredictability by adding safety margins to a circuit's operating voltage, clock frequency or charge stored per bit. However, the rising energy costs needed to compensate for increasing unpredictability are rapidly becoming unacceptable in today's environment where power consumption is often the limiting factor on integrated circuit performance and energy efficiency is a national concern. Reliability and energy consumption are both reaching key inflection points that, together, threaten to reduce or end the benefits of feature size reduction. To continue beneficial scaling, we must use a cross-layer, Jull-system-design approach to reliability. Unlike current systems, which charge every device a substantial energy tax in order to guarantee correct operation in

  1. Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

    NASA Astrophysics Data System (ADS)

    Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

    2017-08-01

    This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

  2. Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

    PubMed

    Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

    2009-12-01

    Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

  3. Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

    SciTech Connect

    Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M.; Sawano, Kentarou

    2015-09-28

    We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

  4. Improving rate capability and decelerating voltage decay of Li-rich layered oxide cathodes via selenium doping to stabilize oxygen

    NASA Astrophysics Data System (ADS)

    Ma, Quanxin; Li, Ruhong; Zheng, Rujuan; Liu, Yuanlong; Huo, Hua; Dai, Changsong

    2016-11-01

    To improve the rate performance and decelerate the voltage decay of Li-rich layered oxide cathode materials, a series of cathode materials Li1.2[Mn0.7Ni0.2Co0.1]0.8-xSexO2 (x = 0, 0.07, 0.14 and 0.21) was synthesized via co-precipitation. Based on the characterization results, it can be concluded that uniform Se6+ doping can improve the degree of crystallinity of Li2MnO3, resulting in a better ordering of atoms in the transition metal layer of this type of cathode materials. In the electrochemical experiments, compared to un-doped samples, one of the Se doped samples (LLMO-Se0.14) exhibited a longer sloping region and shorter potential plateau in the initial charge curves, a larger first coulombic efficiency (ca. 77%), better rate capability (178 mAhm g-1 at 10 C) and higher mid-point voltage (MPV) retention (ca. 95%) after 100 cycles. These results prove that Se doping can effectively improve the rate capability and decelerate the voltage decay process of these cathode materials during cycling via suppressing the oxidation process of O2- to O2 and curbing a layered-to-spinel phase transformation. The above-mentioned functions of Se doping are probably due to the higher bonding energy of Sesbnd O than that of Mnsbnd O.

  5. Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond

    NASA Astrophysics Data System (ADS)

    Chandran, Maneesh; Michaelson, Shaul; Saguy, Cecile; Hoffman, Alon

    2016-11-01

    In this letter, we report on the proof of a concept of an innovative delta doping technique to fabricate an ensemble of nitrogen vacancy centers at shallow depths in (100) diamond. A nitrogen delta doped layer with a concentration of ˜1.8 × 1020 cm-3 and a thickness of a few nanometers was produced using this method. Nitrogen delta doping was realized by producing a stable nitrogen terminated (N-terminated) diamond surface using the RF nitridation process and subsequently depositing a thin layer of diamond on the N-terminated diamond surface. The concentration of nitrogen on the N-terminated diamond surface and its stability upon exposure to chemical vapor deposition conditions are determined by x-ray photoelectron spectroscopy analysis. The SIMS profile exhibits a positive concentration gradient of 1.9 nm/decade and a negative gradient of 4.2 nm/decade. The proposed method offers a finer control on the thickness of the delta doped layer than the currently used ion implantation and delta doping techniques.

  6. Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer

    NASA Astrophysics Data System (ADS)

    Guo, Yu-Bing; Chen, Yong-Hai; Xiang, Ying; Qu, Sheng-Chun; Wang, Zhan-Guo

    2011-09-01

    We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering (FLS) experiment for a cell with ZnO nanorod doped in only one poly (vinyl alcohol) (PVA) layer. When a dc voltage with a positive pole on the ZnO nanorod doped side is applied, the excited charge carriers primarily move along the transverse direction, which results in a higher diffraction efficiency. Conversely, when the dc voltage with a negative pole on the ZnO nanorod doped side is applied, the excited charge carriers primarily move along the longitudinal direction, which leads to a lower diffraction efficiency. A largest diffraction efficiency of about 9% is achieved in the ZnO nanorod doped liquid crystal cell.

  7. Preparation of new superconductors by metal doping of two-dimensional layered materials using ethylenediamine

    NASA Astrophysics Data System (ADS)

    Miao, Xiao; Terao, Takahiro; Yang, Xiaofan; Nishiyama, Saki; Miyazaki, Takafumi; Goto, Hidenori; Iwasa, Yoshihiro; Kubozono, Yoshihiro

    2017-07-01

    We have studied new superconductors prepared by metal doping of two-dimensional (2D) layered materials, FeSe and FeS e0.5T e0.5 , using ethylenediamine (EDA). The superconducting transition temperatures (Tcs ) of metal-doped FeSe and metal-doped FeS e0.5T e0.5 , i.e., (EDA) yMxFeSe and (EDA) yMxFeS e0.5T e0.5 (M : Li, Na, and K), were 31-45 K and 19-25 K, respectively. The stoichiometry of each sample was clarified by energy dispersive x-ray (EDX) spectroscopy, and the x-ray powder diffraction pattern indicated a large expansion of lattice constant c , indicating the cointercalation of metal atoms and EDA. The pressure dependence of superconductivity in (EDA) yN axFeS e0.5T e0.5 has been investigated at a pressure of 0 -0.8 GPa , showing negative pressure dependence in the same manner as (N H3)y N axFeS e0.5T e0.5 . The Tc-c phase diagrams of MxFeSe and MxFeS e0.5T e0.5 were drawn afresh from the Tc and c of (EDA) yMxFeSe and (EDA) yMxFeS e0.5T e0.5 , showing that the Tc increases with increasing c but that extreme expansion of c reverses the Tc trend.

  8. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ~100nm thickness with various Aldoping were prepared at 150°C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7cm{sup 2} /Vs . Film resistivity reached a minima of 4.4×10{sup -3} Ωcm whereas the carrier concentration reached a maxima of 1.7×10{sup 20} cm{sup -3} , at 3 at.% Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at.% Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at.% is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  9. High performance metal-supported solid oxide fuel cells with Gd-doped ceria barrier layers

    NASA Astrophysics Data System (ADS)

    Klemensø, Trine; Nielsen, Jimmi; Blennow, Peter; Persson, Åsa H.; Stegk, Tobias; Christensen, Bjarke Holl; Sønderby, Steffen

    Metal-supported solid oxide fuel cells are believed to have commercial advantages compared to conventional anode (Ni-YSZ) supported cells, with the metal-supported cells having lower material costs, increased tolerance to mechanical and thermal stresses, and lower operational temperatures. The implementation of a metallic support has been challenged by the need to revise the cell fabrication route, as well as electrode microstructures and material choices, to compete with the energy output and stability of full ceramic cells. The metal-supported SOFC design developed at Risø DTU has been improved, and an electrochemical performance beyond the state-of-the-art anode-supported SOFC is demonstrated possible, by introducing a CGO barrier layer in combination with Sr-doped lanthanum cobalt oxide (LSC) cathode. Area specific resistances (ASR) down to 0.27 Ω cm 2, corresponding to a maximum power density of 1.14 W cm -2 at 650 °C and 0.6 V, were obtained on cells with barrier layers fabricated by magnetron sputtering. The performance is dependent on the density of the barrier layer, indicating Sr 2+ diffusion is occurring at the intermediate SOFC temperatures. The optimized design further demonstrate improved durability with steady degradation rates of 0.9% kh -1 in cell voltage for up to 3000 h galvanostatic testing at 650 °C and 0.25 A cm -2.

  10. Highly efficient blue fluorescent OLEDs with doped double emitting layers based on p—n heterojunctions

    NASA Astrophysics Data System (ADS)

    Su, Yue-Ju; Wu, Xiao-Ming; Hua, Yu-Lin; Shen, Li-Ying; Jiao, Zhi-Qiang; Dong, Mu-Sen; Yin, Shou-Gen

    2012-05-01

    We fabricate a kind of novel efficient blue fluorescent organic light emitting device (OLED) based on p-n hetero-junctions composed of hole transporting layer (HTL) N, N'-bis(naphthalen-1-yl)-N, N'-bis(phenyl)-benzidine (NPB) and electron transporting layer (ETL) 4,7-diphnenyl-1,10-phenanthroline (BPhen), into which a new blue material, DNCA (a derivation of N6, N6, N12, N12-tetrap-tolylchrysene-6,12-diamine), is partially doped simultaneously, and double emitting layers are configured. With a turn-on voltage of 2.6 V at 1 cd/m2, this type of OLED presents a maximum luminance efficiency (ηmax) of 8.83 cd/A at 5.818 mA/cm2 and a maximum luminance of over 40000 cd/m2. Meanwhile, the Commission Internationale De L'Eclairage (CIE) coordinates of this device change slightly from (0.13, 0.27) to (0.13, 0.23) as the driving voltage increases from 3 V to 11 V. This improvement in the electroluminescent characteristics is attributed mainly to the ideal p—n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.

  11. Use of electrochemical impedance spectroscopy to determine double-layer capacitance in doped nonpolar liquids.

    PubMed

    Yezer, Benjamin A; Khair, Aditya S; Sides, Paul J; Prieve, Dennis C

    2015-07-01

    Electrochemical impedance spectroscopy in a thin cell (10 μm) was used to infer conductivity, permittivity and the differential double-layer capacitance of solutions of dodecane doped with OLOA 11000 [poly(isobutylene) succinimide] for concentrations of dopant between 0.1% and 10% by weight. All spectra (frequencies between 1 Hz and 100 kHz) were well fit by an equivalent circuit having four elements including a constant-phase element representing the double-layer capacitance. Using Gouy-Chapman theory for small zeta potentials and assuming univalent charge carriers, the double-layer capacitances were converted into charge carrier concentration which was found to be directly proportional to the weight percent of dopant with a 1 wt% solution having 87 carriers/μm(3) (the concentration of either positive or negative charges). This is only 17 ppm of the total monomer concentration calculated from the average molecule weight of the dopant. Dividing the measured conductivities by the charge carrier concentration, we inferred the mobility and hydrodynamic diameters for the charged micelles. The hydrodynamic diameters of carriers were significantly larger than the average diameter of all micelles measured independently by dynamic light scattering. This suggests that only large micelles become charged.

  12. Calculation of the superconducting transition temperature of a graphene layer doped with titanium and palladium

    NASA Astrophysics Data System (ADS)

    Vazquez, Gerardo; Magana, Fernando; Salas-Torres, Osiris

    We explore the structural interactions between graphene and transition metals such as palladium (Pd) and titanium (Ti) and the possibility of inducing superconductivity in a graphene sheet in two cases, one by doping its surface with palladium atoms sit on the center of the hexagons of the graphene layer and other by covering the graphene layer with two layers of titanium metal atoms. The results here were obtained from first-principles density functional theory in the local density approximation. The Quantum-Espresso package was used with norm conserving pseudopotentials. All of the structures considered were relaxed to their minimum energy configuration. Phonon frequencies were calculated using the linear-response technique on several phonon wave-vector mesh. The electron-phonon coupling parameter was calculated with several electron momentum k-mesh. The superconducting critical temperature was estimated using the Allen-Dynes formula with μ* = 0.1 - 0.15. We note that palladium and titanium are good candidate materials to show a metal-to-superconductor transition. We thank Dirección General de Asuntos del Personal Académico de la Universidad Nacional Autónoma de México, partial financial support by Grant IN-106514 and we also thank Miztli Super-Computing center the technical assistance.

  13. Fabrication of Beryllium Capsules with Copper-Doped Layers for NIF Targets: A Progress Report

    SciTech Connect

    McElfresh, M; Gunther, J; Alford, C; Fought, E; Cook, R; Nikroo, A; Xu, H; Cooley, J C; Field, R D; Hackenberg, R E; Nobile, A

    2005-08-12

    The sputtering of beryllium (Be) has been used at LLNL for nearly 30 years in the fabrication of laser targets. Several years ago the prospect of using sputtering to fabricate spherical Be capsules for National Ignition Facility (NIF) targets began to be explored and a basic strategy was developed that involved sputtering down onto plastic mandrels bouncing in a pan. While this appears to be very straightforward in principle, in practice sputtering has been used almost exclusively to make thin films (< 1 micron) on flat substrates. Thick films pose a significant challenge for sputtering while materials on spherical substrates are essentially unexplored. More recently, based on computational results, the point design for the first NIF ignition target capsule was specified as a Be capsule with Cu-doped layers of specific thickness, each layer with a different concentration of copper. While the work described here was motivated by the need to make the layered capsules, the primary progress on Be capsules has been the development of a more complete metallurgical understanding of the materials that are fabricated and the beginning of the exploration of the relationship between the sputter processing and microstructure of these spherical samples. At least two barriers to growth to full thickness (i.e. 170 microns) have been identified and efforts to overcome these barriers are underway.

  14. The preparation of a Eu3+-doped ZnO bi-functional layer and its application in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Wu, Na; Luo, Qun; Qiao, Xvsheng; Ma, Chang-Qi

    2015-12-01

    Recently, spectra conversion has been used to minimize energy loss in photovoltaic devices. In this work, we explore the development of a novel Eu3+-doped ZnO bi-functional layer for use in organic solar cells. The bi-functional layer acts as both a spectra conversion and an electron transporting layer. Compared to conventional spectra conversion layers, it has a simpler device structure, is easier to fabricate, and has a wider spectrum-sensitized region. A series of Eu3+-doped ZnO nanocrystals were synthesized using the simple solution route. X-ray powder diffraction patterns (XRD), transmission electron microscopy (TEM), and UV-visible absorbance spectra were used to characterize the obtained ZnO nanocrystals. The results reveal that the size and bandgap of ZnO nanocrystals can be controlled through regulation of the doping concentration of Eu3+ ions. The energy transfer of ZnO → Eu3+ is observed by photoluminescence (PL) spectra. At a bandgap excitation of around 300-400 nm, a typical emission band from the Eu3+ is obtained. By employing the Eu3+- doped ZnO nanocrystals as a buffer layer in a P3HT:PC61BM bulk heterojunction device, the obtained performance is similar to the undoped ZnO device, indicating that the electrical properties of ZnO are not affected by Eu3+ doping. Due to the down-conversion energy transfer between ZnO and Eu3+, the external quantum efficiency of the ZnO:Eu3+ device at 300-400 nm is higher than that of the pure ZnO device, which subsequently leads to an increase in short circuit current density (J SC). This work proves that it is possible to improve the solar spectrum response in the ultraviolet region of organic solar cells effectively by incorporating the bi-functional layer.

  15. Material and Doping Dependence of the Nodal and Anti-Nodal Dispersion Renormalizations in Single- and Multi-Layer Cuprates

    SciTech Connect

    Johnston, S.; Lee, W.S.; Nowadnick, E.A.; Moritz, B.; Shen, Z.-X.; Devereaux, T.P.; /Stanford U., Geballe Lab. /SLAC

    2010-02-15

    In this paper we present a review of bosonic renormalization effects on electronic carriers observed from angle-resolved photoemission spectra in the cuprates. Specifically, we discuss the viewpoint that these renormalizations represent coupling of the electrons to the lattice and review how materials dependence, such as the number of CuO{sub 2} layers, and doping dependence can be understood straightforwardly in terms of several aspects of electron-phonon coupling in layered correlated materials.

  16. Biomimetic layer-by-layer deposition assisted synthesis of Cu, N co-doped TiO2 nanosheets with enhanced visible light photocatalytic performance.

    PubMed

    Wang, Xiaobo; Yan, Yong; Hao, Bo; Chen, Ge

    2014-10-07

    In this paper, a Cu, N co-doped TiO2 nanosheet with increased visible light photocatalytic activity was successfully synthesized using a biomimetic layer-by-layer deposition process. The polymer, branched-polyethyleneimine (b-PEI) was used as an induction agent for the hydrolysis of titanium bis(ammonium lactato)-dihydroxide (Ti-BALDH) as well as for a nitrogen resource, and the graphene oxide (GO) was used as a two-dimensional nano-template. The positively charged b-PEI will bind to the negatively charged GO and titania. In a typical layer-by-layer deposition process, GO nanosheets are exposed in an alternating fashion to aqueous b-PEI, CuCl2 and Ti-BALDH solutions, thus, making the layer-by-layer deposition of a conformal b-PEI/Cu-Ti-O coating on the GO. Subsequent b-PEI and GO pyrolysis at 550 °C under air yielded Cu, N co-doped TiO2 nanosheets. The materials obtained were comprehensively investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, UV-Vis diffuse reflectance spectroscopy, Raman spectra, photoluminescence spectra and electron paramagnetic resonance. The Cu, N co-doped TiO2 nanosheets showed obviously enhanced photocatalytic activity which was evaluated by degradation of methylene blue under visible light irradiation. This research might provide some new insights for the "green synthesis" of the simultaneous doping of two kinds of foreign atoms into TiO2 with controlled morphology and photocatalytic properties.

  17. Chemical doping and high-pressure studies of layered β -PdB i2 single crystals

    NASA Astrophysics Data System (ADS)

    Zhao, Kui; Lv, Bing; Xue, Yu-Yi; Zhu, Xi-Yu; Deng, L. Z.; Wu, Zheng; Chu, C. W.

    2015-11-01

    We have systematically grown large single crystals of the layered compounds β -PdB i2 , and both the hole-doped PdB i2 -xP bx and the electron-doped N axPdB i2 , and studied their magnetic and transport properties. Hall effect measurements on PdB i2 , PdB i1.8P b0.2 , and N a0.057PdB i2 show that the charge transport is dominated by electrons in all of the samples. The electron concentration is substantially reduced upon Pb doping in PdB i2 -xP bx and increased upon Na intercalation in N axPdB i2 , indicating effective hole doping by Pb and electron doping by Na. We observed a monotonic decrease of the superconducting transition temperature (Tc) from 5.4 K in undoped PdB i2 to less than 2 K for x >0.35 in hole-doped PdB i2 -xP bx . Meanwhile, a rapid decrease of Tc with Na intercalation is also observed in the electron-doped N axPdB i2 , which is in disagreement with the theoretical expectation. In addition, both the magnetoresistance and Hall resistance further reveal evidence for a possible spin excitation associated with Fermi surface reconstruction at ˜50 K in the Na-intercalated PdB i2 sample. The complete phase diagram is thus established from hole doping to electron doping. Meanwhile, a high-pressure study of the undoped PdB i2 shows that the Tc is linearly suppressed under pressure with a d Tc/d P coefficient of -0.28 K/GPa.

  18. Multifunctional Nitrogen-Doped Loofah Sponge Carbon Blocking Layer for High-Performance Rechargeable Lithium Batteries.

    PubMed

    Gu, Xingxing; Tong, Chuan-Jia; Rehman, Sarish; Liu, Li-Min; Hou, Yanglong; Zhang, Shanqing

    2016-06-29

    Low-cost, long-life, and high-performance lithium batteries not only provide an economically viable power source to electric vehicles and smart electricity grids but also address the issues of the energy shortage and environmental sustainability. Herein, low-cost, hierarchically porous, and nitrogen-doped loofah sponge carbon (N-LSC) derived from the loofah sponge has been synthesized via a simple calcining process and then applied as a multifunctional blocking layer for Li-S, Li-Se, and Li-I2 batteries. As a result of the ultrahigh specific area (2551.06 m(2) g(-1)), high porosity (1.75 cm(3) g(-1)), high conductivity (1170 S m(-1)), and heteroatoms doping of N-LSC, the resultant Li-S, Li-Se, and Li-I2 batteries with the N-LSC-900 membrane deliver outstanding electrochemical performance stability in all cases, i.e., high reversible capacities of 623.6 mA h g(-1) at 1675 mA g(-1) after 500 cycles, 350 mA h g(-1) at 1356 mA g(-1) after 1000 cycles, and 150 mA h g(-1) at 10550 mA g(-1) after 5000 cycles, respectively. The successful application to Li-S, Li-Se, and Li-I2 batteries suggests that loofa sponge carbon could play a vital role in modern rechargeable battery industries as a universal, cost-effective, environmentally friendly, and high-performance blocking layer.

  19. Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity detection in microchips.

    PubMed

    Lima, Renato Sousa; Segato, Thiago Pinotti; Gobbi, Angelo Luiz; Coltro, Wendell Karlos Tomazelli; Carrilho, Emanuel

    2011-12-21

    This communication describes a new procedure to increase the sensitivity of C(4)D in PDMS/glass microchips. The method consists in doping the insulating layer (PDMS) over the electrodes with nanoparticles of TiO(2), increasing thus its dielectric constant. The experimental protocol is simple, inexpensive, and fast.

  20. Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers

    NASA Astrophysics Data System (ADS)

    Taohong, Wang; Changbo, Chen; Kunping, Guo; Guo, Chen; Tao, Xu; Bin, Wei

    2016-03-01

    The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer (CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode (OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline (Bphen), and 8-hydroxyquinolatolithium (Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies (PCEs) of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs2CO3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL. Project supported by the National Natural Science Foundation of China (Grant No. 61204014), the “Chenguang” Project (13CG42) supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation, China, and the Shanghai University Young Teacher Training Program of Shanghai Municipality, China.

  1. Pulsed laser annealing of highly doped Ge:Sb layers deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Batalov, R. I.; Bayazitov, R. M.; Faizrakhmanov, I. A.; Lyadov, N. M.; Shustov, V. A.; Ivlev, G. D.

    2016-10-01

    Germanium (Ge) is a promising material for micro- and optoelectronics to produce high speed field-effect transistors, photodetectors, light-emitting diodes and lasers. For such applications tensile-strained and/or highly n-doped Ge layers are needed. The authors have performed the formation of such layers by ion-beam sputtering of composite Sb/Ge target, deposition of thin amorphous Ge:Sb films (~200 nm thick) on different substrates (c-Si, c-Al2O3, α-SiO2) followed by pulsed laser annealing (PLA) for their crystallization and Sb dopant activation. Structural, electrical and optical characterization of Ge:Sb films was carried out using scanning electron microscopy, x-ray diffraction, micro-Raman spectroscopy, secondary ion mass spectrometry methods and by measuring sheet resistance, carrier concentration and photoluminescence. The obtained polycrystalline n-Ge:Sb layers (N Sb ~ 1 at.%) are characterized by increased values of tensile strain (up to 1%) and homogenious Sb dopant distribution within layer thickness. The electrical measurements at 300 K revealed the low sheet resistance (up to 40 Ω/□) and extremely high electron concentration (up to 5.5  ×  1020 cm-3) in Ge:Sb/SiO2 samples that indicated full electrical activation of Sb dopant on SiO2 substrate. The increased values of tensile strain and electron concentration of Ge:Sb films on α-SiO2 are explained by low values of thermal conductivity and thermal expansion coefficients of quartz substrate.

  2. Photoluminescence on cerium-doped ZnO nanorods produced under sequential atomic layer deposition-hydrothermal processes

    NASA Astrophysics Data System (ADS)

    Cervantes-López, J. L.; Rangel, R.; Espino, J.; Martínez, E.; García-Gutiérrez, R.; Bartolo-Pérez, P.; Alvarado-Gil, J. J.; Contreras, O. E.

    2017-01-01

    Doped and undoped ZnO nanorod arrays were produced combining atomic layer deposition and hydrothermal processes. First, a ZnO layer with preferential orientation normal to the c-axis was grown on the substrate by means of the decomposition of diethylzinc; subsequently, the nanorod arrays were produced through solvothermal process using a solution of Zn(NO3)2 as precursor. Doped ZnO nanorods were produced using Ce(C2H3O2)3·H2O as dopant agent precursor. Undoped and Ce-doped ZnO nanorod arrays showed high-intensity photoluminescence. The doping concentration of x = 0.04 (Zn1- x Ce x O) displayed the highest photoluminescence. Undoped ZnO showed an intense UV peak centered at 382 nm with a narrow full wide half maximum of 33 nm. Ce-doped ZnO PL spectra contain three bands, one signal in the UV region centered at 382 nm, other centered at 467 nm in the near-green region and other one emission centered at 560 nm. The results herein exposed demonstrate the capability to produce high-quality ZnO and Zn1- x Ce x O films.

  3. Band offset of vanadium-doped molybdenum oxide hole transport layer in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Chang, Feng-Kuei; Huang, Yi-Chi; Jeng, Jiann-Shing; Chen, Jen-Sue

    2016-08-01

    Solution-processed vanadium-doped molybdenum oxide films (V)MoOx films with mole ratios of Mo:V = 1:0, 1:0.05, 1:0.2, 1:0.5, 0:1, are fabricated as hole transport layer (HTL) in organic photovoltaics with active layer blend comprising poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). The device structure is ITO/(V)MoOx/P3HT:PCBM/ZnO NP/Al, and the working area is 0.16 cm2. The result shows that the device using V0.05MoOx HTL has the best performance, including power conversion efficiency of 2.16%, Voc of 0.6 V, Jsc of 6.93 mA/cm2, and FF of 51.9%. Using ultraviolet photoelectron spectroscopy (UPS), we can define the energy levels of valence band edge and Fermi level of (V)MoOx films. UPS analysis indicates that V0.05MoOx has the smallest energy band offset between its valence band edge to the HOMO of P3HT, which is advantageous for hole transporting from P3HT to ITO anode via the V0.05MoOx HTL. In addition, V0.05MoOx film shows the lowest electrical resistivity among all (V)MoOx films, which is further beneficial for hole transportation.

  4. Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

    PubMed

    Tan, Wee Chong; Cai, Yongqing; Ng, Rui Jie; Huang, Li; Feng, Xuewei; Zhang, Gang; Zhang, Yong-Wei; Nijhuis, Christian A; Liu, Xinke; Ang, Kah-Wee

    2017-06-01

    Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈10(5) cm(2) V(-1) s(-1) ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm(2) V(-1) s(-1) at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Nissin Ion Doping System--H{sub 2}{sup +} Implantation for Silicon Layer Exfoliation

    SciTech Connect

    Cherekdjian, S.; Maschmeyer, R. O.; Cites, J.; Tatemichi, J.; Inouchi, Y.; Onoda, M.; Orihira, K.; Matsumoto, T.; Konishi, M.; Naito, M.

    2011-01-07

    A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end-station with robotic handling for GEN 4 glass substrates was redesigned, and a new end-station was built to handle rectangular silicon tiles (23x18 cm). A three sub-system modular risk reduction process was used to test production solutions, and maximize the success of transferring the R and D implant recipes developed on a standard focused beam ion implanter to the Nissin broad beam iG4 solution. The silicon tile end-station including the implant scanning system was tested for reliability and durability. The end-station handled rectangular silicon tiles reliably without detrimental edge chipping or silicon breakage. The ion optics was demonstrated to successfully provide stable hydrogen ions for the Corning registered silicon on glass layer transfer process. This layer transfer process is very susceptible and sensitive to the implant processing temperature. The temperature excursions during implant processing for the iG4 exfoliation process were found to be in line with the R and D focused ion beam system. This data confirmed the system production-readiness in providing an efficient solution for the high volume production of hydrogen implanted silicon rectangular tiles.

  6. Improve efficiency of perovskite solar cells by using Magnesium doped ZnO and TiO2 compact layers

    NASA Astrophysics Data System (ADS)

    Baktash, Ardeshir; Amiri, Omid; Sasani, Alireza

    2016-05-01

    Here the effect of Magnesium doped TiO2 and ZnO as hole blocking layers (HBLs) are investigated by using solar cell capacitance simulator (SCAPS). The Impact of Magnesium concentration into the TiO2 and ZnO and effect of operating temperature on the performance of the perovskite solar cell are investigated. Best cell performance for both TiO2 and ZnO HBLs (with cell efficiencies of 19.86% and 19.57% respectively) are concluded for the doping level of 10% of Mg into the structure of HBLs. Increase in operating temperature from 300 K to 400 K are decreased the performance of the perovskite solar cell with both pure and Mg-doped HBLs. However, the cells with pure ZnO layer and with Zn0.9 Mg0.1O layer show the highest (with a decline of 8.88% in efficiency) and the lowest stability (with a decline of 50.49% in efficiency) at higher temperatures respectively. Moreover, the cell with Ti0.9 Mg0.1O2 layer shows better stability (with 21.85% reduction in efficiency) than the cell with pure TiO2 compact layer (with 23.28% reduction in efficiency) at higher operating temperatures.

  7. The application of highly doped single-layer graphene as the top electrodes of semitransparent organic solar cells.

    PubMed

    Liu, Zhike; Li, Jinhua; Sun, Zhen-Hua; Tai, Guoan; Lau, Shu-Ping; Yan, Feng

    2012-01-24

    A single-layer graphene film with high conductance and transparency was realized by effective chemical doping. The conductance of single-layer graphene was increased for more than 400% when it was doped with Au nanoparticles and poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid). Then semitransparent organic solar cells based on poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) were fabricated with single-layer graphene and indium tin oxide (ITO) as the top and bottom electrodes, respectively. The performance of the devices was optimized by tuning the active layer thickness and doping the single-layer graphene electrodes. The maximum efficiency of 2.7% was observed in the devices with the area of 20 mm(2) illuminated from graphene electrode under the AM1.5 solar simulator. It is notable that all of the devices showed higher efficiency from the graphene than ITO side, which was attributed to the better transmittance of the graphene electrodes. In addition, the influence of the active area of the organic solar cell on its photovoltaic performance was studied. We found that, when the active areas increased from 6 to 50 mm(2), the power conversion efficiencies decreased from 3% to 2.3% because of the increased series resistances and the decreased edge effect of the devices.

  8. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Astrophysics Data System (ADS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  9. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  10. Structural phase states in nickel-titanium surface layers doped with silicon by plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Kashin, Oleg A.; Lotkov, Aleksandr I.; Kudryashov, Andrey N.; Krukovsky, Konstantin V.; Ostapenko, Marina G.; Neiman, Alexey A.; Borisov, Dmitry P.

    2015-10-01

    The paper reports on a study of NiTi-based alloys used for manufacturing self-expanding intravascular stents to elucidate how the technological modes of plasma immersion ion implantation with silicon influence the chemical and phase composition of their surface layers. It is shown that two types of surface structure can be obtained depending on the mode of plasma immersion implantation: quasi-amorphous Si coating and Si-doped surface layer. The Si-doped surface layer contains new phases: a phase structured as the main B2 phase of NiTi but with a lower lattice parameter, R phase, and phase of highly dispersed SiO2 precipitates.

  11. Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films.

    PubMed

    Li, Yuanzheng; Li, Xinshu; Chen, Heyu; Shi, Jia; Shang, Qiuyu; Zhang, Shuai; Qiu, Xiaohui; Liu, Zheng; Zhang, Qing; Xu, Haiyang; Liu, Weizhen; Liu, Xinfeng; Liu, Yichun

    2017-08-23

    MoS2 as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS2 via atomic-layer-deposited Al2O3 films. The deposited Al2O3 films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS2 that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS2 with different thickness of Al2O3, the doped carrier concentration is estimated at ∼2.7 × 10(13) cm(-2) based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS2 as the thicknesses of Al2O3 capping layer increase. Effective control of gas molecules doping in monolayer MoS2 provides us a valuable insight into the applications of MoS2 based optical and electrical devices.

  12. Effect of doping on the characteristics of infrared photodetectors based on van der Waals heterostructures with multiple graphene layers

    NASA Astrophysics Data System (ADS)

    Ryzhii, V.; Ryzhii, M.; Leiman, V.; Mitin, V.; Shur, M. S.; Otsuji, T.

    2017-08-01

    We study the operation of infrared photodetectors based on van der Waals heterostructures with multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon absorption, the propagation of these electrons, and the electrons injected from the emitter across the heterostructure and their collection by the collector contact. The space charge of the holes trapped in the GLs provides a relatively strong injection and large photoelectric gain. We calculate the GLIP responsivity and dark current detectivity as functions of the energy of incident infrared photons and the structural parameters. It is shown that both the periodic selective doping of the inter-GL barrier layers and the GL doping lead to a pronounced variation of the GLIP spectral characteristics, particularly near the interband absorption threshold, while the doping of GLs solely results in a substantial increase in the GLIP detectivity. The doping "engineering" opens wide opportunities for the optimization of GLIPs for operation in different parts of the radiation spectrum from near infrared to terahertz.

  13. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect

    Prestat, E. Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A.

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  14. Boundary Magnetization and Exchange Bias of Boron Doped Cr2O3 Pinning Layers

    NASA Astrophysics Data System (ADS)

    Street, Michael; Echtenkamp, Will; Dowben, Peter; Binek, Christian

    2014-03-01

    This research is part of an effort to utilize voltage-controlled boundary magnetization (BM) in the magnetoelectric (ME) Cr2O3 for spintronic applications. We exploit the electric switchable boundary magnetic moment (MM) of Cr2O3. The net MM at the interface can be useful to manipulate the magnetic states of an adjacent ferromagnetic (FM) material. Using a FM Pd/Co multilayer deposited on Cr2O3, reversible, room-temperature isothermal switching of the exchange bias field has been achieved by reversing the electric field. The voltage-controlled magnetization of the FM layer can be utilized as a state variable. However, to use voltage-controlled BM as a key spintronic material for devices operating at room temperature, the Néel temperature TN of the ME antiferromagnet must be increased above the bulk value of TN = 307 K of pure Cr2O3. First principles calculations show that boron doping of Cr2O3 can increase TN. We diagram structural and magnetic characterizations of pure and B-Cr2O3 grown on Al2O3. An increase in TN of 120 K is achieved making Cr2O3 suitable for room temperature spintronic applications. Further, we attempt to create an exchange bias (EB) system using a FM Pd/Co multilayer on B-doped Cr2O3. From this, we attempt to switch the EB field via the electric field. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.

  15. Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p-Type WOx Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer.

    PubMed

    Kim, Hyo-Min; Kim, Jeonggi; Lee, Jieun; Jang, Jin

    2015-11-11

    Quantum dots (QDs) are a promising material for emissive display with low-cost manufacturing and excellent color purity. In this study, we report colloidal quantum-dot light emitting diodes (QLEDs) with an inverted architecture with a solution processed charge generation layer (CGL) of p-type polymer (tungsten oxide doped poly(ethylenedioxythiophene)/polystyrenesulfonate, PSS:WOx) and n-type metal oxide (lithium doped zinc oxide, LZO). The effective charge generation in solution processed p-n junction was confirmed by capacitance-voltage (C-V) and current density-electric field characteristics. It is also demonstrated that the performances of CGL based QLEDs are very similar when various substrates with different work functions are used.

  16. Inverted polymer solar cell using `Ta' doped V2O5 thin film as cathodic buffer layer

    NASA Astrophysics Data System (ADS)

    Kovendhan, M.; Joseph, D. Paul; Babu, K. Sowri; Sendilkumar, A.

    2017-05-01

    `Ta' 8 wt % doped V2O5 thin film was deposited onto ITO substrate by thermal evaporation method. The XRD pattern confirms the film to be polycrystalline with orthorhombic structure. The SEM image show a smooth spongy bush like structure. Transparency of `Ta' 8 wt % doped V2O5 film is around 35% in visible region and it decreased in IR region. Transport properties were studied by Hall effect measurements. Inverted polymer solar cell using `Ta' 8 wt % doped V2O5 thin film as cathodic buffer layer with device structure ITO/`Ta' 8 wt % V2O5/P3HT:PCBM/MoO3/Ag has been fabricated and studied.

  17. Tape method of forming a thin layer of doped lanthanum chromite particles and of bonding such on an electrode

    DOEpatents

    Richards, Von L.; Singhal, Subhash C.; Pal, Uday B.

    1992-01-01

    A combustible polymer film, useful for application of an interconnection on an electrode is made by: (1) providing doped LaCro.sub.3 particles; (2) dispersing doped LaCrO.sub.3 particles in a solvent, to provide a dispersion; (3) screening the dispersion to provide particles in the range of from 30 micrometers to 80 micrometers; (4) admixing a fugitive polymer with the particles; (5) casting the dispersion to provide a film; (6) drying the film; and (7) stripping the film. The film can then be applied to a porous, preheated electrode top surface, and then electrochemical vapor depositing a dense skeletal LaCrO.sub.3 structure, between and around the doped LaCrO.sub.3 particles. Additional solid oxide electrolyte and fuel electrode layers can then be added to provide a fuel cell.

  18. Tape method of forming a thin layer of doped lanthanum chromite particles and of bonding such on an electrode

    DOEpatents

    Richards, V.L.; Singhal, S.C.; Pal, U.B.

    1992-07-21

    A combustible polymer film, useful for application of an interconnection on an electrode is made by: (1) providing doped LaCro[sub 3] particles; (2) dispersing doped LaCrO[sub 3] particles in a solvent, to provide a dispersion; (3) screening the dispersion to provide particles in the range of from 30 micrometers to 80 micrometers; (4) admixing a fugitive polymer with the particles; (5) casting the dispersion to provide a film; (6) drying the film; and (7) stripping the film. The film can then be applied to a porous, preheated electrode top surface, and then a dense skeletal LaCrO[sub 3] structure is electrochemically vapor deposited between and around the doped LaCrO[sub 3] particles. Additional solid oxide electrolyte and fuel electrode layers can then be added to provide a fuel cell. 4 figs.

  19. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

    SciTech Connect

    Antonov, A. V.; Drozdov, M. N.; Novikov, A. V. Yurasov, D. V.

    2015-11-15

    The segregation of Sb in Ge epitaxial layers grown by the method of molecular beam epitaxy on Ge (001) substrates is investigated. For a growth temperature range of 180–325°C, the temperature dependence is determined for the segregation ratio of Sb in Ge, which shows a sharp increase (by more than three orders of magnitude) with increasing temperature. The strong dependence of the segregation properties of Sb on the growth temperature makes it possible to adapt a method based on the controlled use of segregation developed previously for the doping of Si structures for the selective doping of Ge structures with a donor impurity. Using this method selectively doped Ge:Sb structures, in which the bulk impurity concentration varies by an order of magnitude at distances of 3–5 nm, are obtained.

  20. Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers

    SciTech Connect

    Pintilie, I.; Grossner, U.; Svensson, B. G.; Irmscher, K.; Thomas, B.

    2007-02-05

    Nitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z{sub 1,2} and EH{sub 6,7} levels during irradiation and subsequent annealing was studied. Both Z{sub 1,2} and EH{sub 6,7} increase in concentration with the N doping as well as with the C/Si ratio. It is demonstrated that the growth conditions play a decisive role for the annihilation of the EH{sub 6,7} level and a possible identity of the EH{sub 6,7} defect is discussed.

  1. Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate

    NASA Astrophysics Data System (ADS)

    Fathipour, Sara; Pandey, Pratyush; Fullerton-Shirey, Susan; Seabaugh, Alan

    2016-12-01

    Electric double layers (EDLs) formed between polyethylene oxide cesium perchlorate and multilayer WSe2 field-effect transistors (FETs) are explored as a means for contact and access region doping. In this application, the electric double layer is formed using a top field plate or a side gate and then locked into place by cooling of the device below the glass transition temperature of the polymer. A dual work-function Ti/Pd contact is used to form the Schottky contacts with Ti as the n-contact and Pd as the p-contact and these are evaporated in a single evaporation. Using the EDL doping technique, sheet carrier density and current density are as high as (4.9 ± 1.9) × 1013 cm-2 and 58 μA/μm for n-doping and (3.5 ± 1.9) × 1013 cm-2 and 50 μA/μm for p-doping for the highest channel conductivities. The weak temperature dependence of the transfer characteristics at high doping levels reveals that the current in the Schottky contacts is dominated by tunneling with a contact resistance of 1 kΩ μm for the p-branch and 3.4 kΩ μm for the n-branch, comparable to the best WSe2 FET reports. At the highest carrier densities, the temperature coefficient of the conductance becomes negative as the mobility of the channel controls the temperature dependence. Using EDL doping, n-FET and p-FET configurations are demonstrated.

  2. Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics

    NASA Astrophysics Data System (ADS)

    Stadler, B. J. H.; Vaccaro, K.; Davis, A.; Ramseyer, G. O.; Martin, E. A.; Dauplaise, H. M.; Theodore, L. M.; Lorenzo, J. P.

    1996-05-01

    Rare earth-and transition metal-doped thin films of InP, In0.53Ga0.47As, and In0.71Ga0.29As0.58P0.42 were grown by liquid phase epitaxy and evaluated for use in integrated electro-optical and magneto-optical applications, such as waveguides and Faraday rotators. The films were lattice matched to (100) InP substrates, and the transition metal (Mn) and rare earth (Gd, Eu, and Er) doping concentra-tions were between 2.6 × 1018 and 1.5 × 1020 cm-3. The chemical profiles were generally found to be homogeneous by SIMS, although in more highly doped films the rare earths were observed to segregate toward the interfaces. The undoped films were n-type, and the net carrier concentrations in the rare earth-doped (Gd, Eu, Er) films were decreased by an order of magnitude. The Mn-doped films were p-type. Optically, the rare earth dopants were observed to raise the refractive index of the layers at 632.8 nm, and subsequent waveguiding in doped InP layers was observed at 1.3 μm. Although the Faraday rotations of our materials were much less than that of well known oxides, such as yttrium iron garnet, they were sufficient for device applications, and our materials can be much more easily integrated with InP OEIC devices. For example, a 1 cm waveguide would provide the large rotation (45°) required in isolator applica-tions.

  3. Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report

    SciTech Connect

    Tamargo, M. C.; Neumark, G. F.

    2004-04-19

    It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.

  4. Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Wu, Zili; Zhang, Xiong; Liang, Tianhui; Feng, Zhe Chuan; Cui, Yiping

    2016-10-01

    The Mg-delta-doped p-AlInGaN epi-layers were successfully grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth temperature on the characteristics of the Mg-delta-doped p-AlInGaN epi-layers were investigated in detail with scanning electron microscopy (SEM), high resolution X-ray diffraction (HR-XRD), photoluminescence (PL), and Hall effect measurements. The characterization results showed that the surfaces of the p-AlInGaN epi-layers were textured with a high density of hexagonal pits, which was found to be strongly dependent on the growth temperature. This feature should be very helpful to enhance the light extraction efficiency when the p-AlInGaN epi-layers were used as the top p-contact layer for making AlInGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). In addition, the low temperature PL spectra demonstrated that the Mg-H complex-related broad emission band which was observed for the as-grown p-AlInGaN epi-layer samples was not resolvable for the annealed samples. This fact implies that the Mg-H complex can be effectively dissociated by annealing process. Moreover, owing to the improved In incorporation efficiency and crystalline quality for the p-AlInGaN epi-layers, a hole concentration as high as 1.69 × 1017 cm-3 was achieved with the reformed Mg-delta-doping technique developed in this study.

  5. Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H2/Ar plasma

    NASA Astrophysics Data System (ADS)

    Hirata, Akiko; Fukasawa, Masanaga; Shigetoshi, Takushi; Okamoto, Masaki; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

    2017-06-01

    The etch rate of tin-doped indium oxide (or indium tin oxide, ITO) and the effects of a hydrogen-damaged layer caused by H2/Ar plasma were investigated using several surface analysis techniques. The ITO etch rate strongly depended on the H2/Ar flow rate ratio. The ITO was reduced by hydrogen injection and generated an In-rich (hydrogen-induced damage) layer on the surface. Because this In-rich layer had a higher sputtering yield, the hydrogen-damaged layer enhanced the ITO etch rate. Thus, the etching of ITO in H2/Ar plasma is determined by the balance between the formation of the In-rich damaged layer by H ion irradiation and the sputtering by Ar (relatively heavy inert gas) ions.

  6. Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu; Choi, Won Jun

    2015-11-01

    We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (Ec-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (Ec-0.35 eV) and M4 (Ec-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC.

  7. Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

    SciTech Connect

    Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu; Choi, Won Jun

    2015-11-16

    We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (E{sub c}-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (E{sub c}-0.35 eV) and M4 (E{sub c}-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC.

  8. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-07-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

  9. Effect of Nb Doping on Chemical Sensing Performance of Two-Dimensional Layered MoSe2.

    PubMed

    Choi, Sun Young; Kim, Yonghun; Chung, Hee-Suk; Kim, Ah Ra; Kwon, Jung-Dae; Park, Jucheol; Kim, Young Lae; Kwon, Se-Hun; Hahm, Myung Gwan; Cho, Byungjin

    2017-02-01

    Here, we report that Nb doping of two-dimensional (2D) MoSe2 layered nanomaterials is a promising approach to improve their gas sensing performance. In this study, Nb atoms were incorporated into a 2D MoSe2 host matrix, and the Nb doping concentration could be precisely controlled by varying the number of Nb2O5 deposition cycles in the plasma enhanced atomic layer deposition process. At relatively low Nb dopant concentrations, MoSe2 showed enhanced device durability as well as NO2 gas response, attributed to its small grains and stabilized grain boundaries. Meanwhile, an increase in the Nb doping concentration deteriorated the NO2 gas response. This might be attributed to a considerable increase in the number of metallic NbSe2 regions, which do not respond to gas molecules. This novel method of doping 2D transition metal dichalcogenide-based nanomaterials with metal atoms is a promising approach to improve the performance such as stability and gas response of 2D gas sensors.

  10. A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition.

    PubMed

    Han, Kyu Seok; Kalode, Pranav Y; Koo Lee, Yong-Eun; Kim, Hongbum; Lee, Lynn; Sung, Myung Mo

    2016-03-07

    Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 Å resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility.

  11. Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

    PubMed Central

    2013-01-01

    High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was confirmed by comparing the thicknesses measured by spectroscopic ellipsometry with the expected. It was also found that the locations of the (100) diffraction peaks shift towards lower diffraction angles as Ti concentration increased. For all samples, optical transmittance over 80% was obtained in the visible region. The sample with ALD cycle ratio of ZnO/TiO2 being 20 had the lowest resistivity of 8.874 × 10−4 Ω cm. In addition, carrier concentration of the prepared films underwent an evident increase and then decreased with the increase of Ti doping concentration. PMID:23442766

  12. Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes.

    PubMed

    Yoo, Yeon Woo; Jeon, Woojin; Lee, Woongkyu; An, Cheol Hyun; Kim, Seong Keun; Hwang, Cheol Seong

    2014-12-24

    The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the evolutions of their crystallographic phases, grain sizes, and electric properties, such as their dielectric constants and leakage current densities, were examined for their applications in high-voltage devices. The film thickness and Al-doping concentration were varied in the ranges of 60-75 nm and 0.5-9.7%, respectively, for AHO and 55-90 nm and 1.0-10.3%, respectively, for AZO. The top and bottom electrodes were sputtered Mo films. The detailed structural and electrical property variations were examined as functions of the Al concentration and film thickness. The AHO films showed a transition from the monoclinic phase (Al concentration up to 1.4%) to the tetragonal/cubic phase (Al concentration 2.0-3.5%), and finally, to the amorphous phase (Al concentration >4.7%), whereas the AZO films remained in the tetragonal/cubic phase up to the Al concentration of 6.4%. For both the AHO and AZO films, the monoclinic and amorphous phases had dielectric constants of 20-25, and the tetragonal/cubic phases had dielectric constants of 30-35. The highest electrical performance levels for the application to the high-voltage charge storage capacitors in flat panel displays were achieved with the 4.7-9.7% Al-doped AHO films and the 2.6% Al-doped AZO films.

  13. Silica supported phospholipid layers doped with GM1: A comparison between different methods.

    PubMed

    Santos, Olga; Arnebrant, Thomas

    2009-01-15

    A method to coat hydrophobic surfaces with lipid molecules in a reproducible manner and in which the lipid molecules are resistant to detergent washings, would benefit the development of new ELISA assays. This work presents different approaches to build 1,2-dioleolyl-sn-glycero-3-phosphocholine (DOPC) layers doped with a monosialoganglioside (GM1) supported on silica surfaces, which are stable toward buffer rinsing and washing with surfactant (Tween 20). The three methods employed were: method 1, coadsorption of DOPC:GM1 (0-10 mol%) with the surfactant n-dodecyl-beta-D-maltoside (DDM) from micellar solutions, with successive adsorption and rinsing steps; method 2, vesicle fusion from DOPC: GM1 (0-10 mol%) liposomes; and method 3, deposition of GM1 from organic solvent (chloroform) and exposure to an aqueous environment (hydration method). The vesicle fusion method was also tested in polystyrene surfaces. Cholera toxin subunit B (CTB) was used to detect the presence of GM1 on the formed layers. The results indicated that the vesicle fusion was the only method that was successful in creating stable mono- and bilayers onto hydrophobized and hydrophilic silica, respectively. The mixed micellar solution method was suitable for creating pure lipid (DOPC) monolayers but the incorporation of GM1 in the micelles led to monolayers which were very unstable with respect to buffer rinsing. The hydration method led to monolayers of GM1 that were partly rinsed off by a continuous buffer flow. Adsorption of CTB was found to be proportional to the amount of GM1 present in the liposomes. The amount of CTB adsorbed onto the lipid bilayers was roughly the double as the one determined on the monolayers with the same liposome compositions. The vesicle fusion method was also able to create monolayers of pure DOPC and DOPC:10 mol% GM1 on the polystyrene surfaces.

  14. Distinct oxygen hole doping in different layers of Sr₂CuO4-δ/La₂CuO₄ superlattices

    DOE PAGES

    Smadici, S.; Lee, J. C. T.; Rusydi, A.; ...

    2012-03-28

    X-ray absorption in Sr₂CuO4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲xoptimal in bulk La2-xSrxCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

  15. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

    SciTech Connect

    Khazanova, S. V. Degtyarev, V. E.; Tikhov, S. V.; Baidus, N. V.

    2015-01-15

    InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.

  16. Optimized inverted polymer solar cells incorporating Cs2CO3-doped C60 as electron transport layer

    NASA Astrophysics Data System (ADS)

    Barbot, A.; Lucas, B.; Di Bin, C.; Ratier, B.; Aldissi, M.

    2013-05-01

    An efficient charge transfer between co-sublimed cesium carbonate (Cs2CO3) and fullerene C60 provides an n-type material exhibiting an electrical conductivity above 1 S/cm. This type of doped layers can be used in organic optoelectronic devices to reduce ohmic losses at organic-electrode interfaces. We report here an analysis of inverted polymer-based solar cells incorporating Cs2CO3 doped C60 as electron transport layer (ETL). The optimization of both dopant concentration and thickness resulted in a maximum efficiency of 3.79% compared to 3% for similar devices using undoped C60 as ETL and 2.13% for devices without any ETL.

  17. Mode-locked ytterbium-doped all-fiber lasers based on few-layer black phosphorus saturable absorbers

    NASA Astrophysics Data System (ADS)

    Song, Huaqing; Wang, Qi; Zhang, Yunfan; Li, Li

    2017-07-01

    In this paper, we demonstrated ytterbium-doped mode-locked fiber lasers based on saturable absorbers (SAs) made of few-layer black phosphorus (BP) with all normal dispersion. The few-layer BP was prepared with the liquid phase exfoliation method and was deposited onto fiber facets by an optically driven process. By incorporating the BP-SA into an ytterbium-doped fiber cavity, stable mode-locking laser operation in all-normal dispersion region was achieved with a repetition rate of 46.3 MHz. The laser spectrum was centered at 1030.6 nm with a 3 dB bandwidth of 0.11 nm. Maximum output power of 32.5 mW was achieved and showing no signs of saturation.

  18. Fluorescent vancomycin and terephthalate comodified europium-doped layered double hydroxides nanoparticles: synthesis and application for bacteria labelling

    NASA Astrophysics Data System (ADS)

    Sun, Jianchao; Fan, Hai; Wang, Nan; Ai, Shiyun

    2014-09-01

    Vancomycin (Van)- and terephthalate (TA)-comodified europium-doped layered double hydroxides (Van-TA-Eu-LDHs) nanoparticles were successfully prepared by a two-step method, in which, TA acted as a sensitizer to enhance the fluorescent property and Van was modified on the surface of LDH to act as an affinity reagent to bacteria. The obtained products were characterized by X-ray diffraction, transmission electron microscope and fluorescent spectroscopy. The results demonstrated that the prepared Van- and TA-comodified europium-doped layered double hydroxides (Van-TA-Eu-LDHs) nanoparticles with diameter of 50 nm in size showed highly efficient fluorescent property. Furthermore, due to the high affinity of Van to bacteria, the prepared Van-TA-Eu-LDHs nanoparticles showed efficient bacteria labelling by fluorescent property. The prepared nanoparticles may have wide applications in the biological fields, such as biomolecular labelling and cell imaging.

  19. High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

    DOE PAGES

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; ...

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorptionmore » fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.« less

  20. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

    SciTech Connect

    Lee, June Key E-mail: hskim7@jbnu.ac.kr; Hyeon, Gil Yong; Tawfik, Wael Z.; Choi, Hee Seok; Ryu, Sang-Wan; Jeong, Tak; Jung, Eunjin; Kim, Hyunsoo E-mail: hskim7@jbnu.ac.kr

    2015-05-14

    Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ∼35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region.

  1. High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

    SciTech Connect

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A.; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorption fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.

  2. Kinetic Evaluation of Lipid Oils Conversion to Biofuel Using Layered Double Hydroxide Doped with Triazabicyclodece Catalyst

    NASA Astrophysics Data System (ADS)

    Nato Lopez, Frank D.

    Worldwide, there is an ever increasing need for sustainable, renewable fuels that will accommodate the rapidly increasing energy demand and provide independence from fossil fuels. The search for a sustainable alternative to petroleum based fuels has been a great challenge to the scientific community; therefore, great efforts are being made to overcome the fossil fuels dependence by exploring the prominent field of biofuels (bioethanol and biodiesel). Traditional biodiesel is produced from feedstocks such as vegetable oils and animal fats by converting the triglycerides with methanol in the presence of a homogeneous catalyst to produce fatty acid methyl esters (FAMEs). However, drawbacks of this process are the undesired glycerol byproduct and post reaction processing, including separation from reaction mixture, that results in high costs factors. In the present work, the reaction kinetics of a glycerol-free biodiesel method is studied. This method consists of the transesterification of a vegetable oil (i.e. canola oil) using dimethyl carbonate (DMC) as an alternative methylating agent in presence of layered double hydroxides doped with triazabicyclodecene catalyst (a basic organocatalyst). Furthermore, is theorized that this heterogeneous catalyst (TBD/LDH) simultaneously converts both FFAs and triglycerides due to acid sites formed by Al3+ active sites of the LDH structure. Additionally, the versatility of the Raman in situ technique was used as quantitative analysis tool to monitor the reaction kinetics and collect real time data.

  3. High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

    PubMed

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.

  4. Atomic layer deposition of Nb-doped ZnO for thin film transistors

    NASA Astrophysics Data System (ADS)

    Shaw, A.; Wrench, J. S.; Jin, J. D.; Whittles, T. J.; Mitrovic, I. Z.; Raja, M.; Dhanak, V. R.; Chalker, P. R.; Hall, S.

    2016-11-01

    We present physical and electrical characterization of niobium-doped zinc oxide (NbZnO) for thin film transistor (TFT) applications. The NbZnO films were deposited using atomic layer deposition. X-ray diffraction measurements indicate that the crystallinity of the NbZnO films reduces with an increase in the Nb content and lower deposition temperature. It was confirmed using X-ray photoelectron spectroscopy that Nb5+ is present within the NbZnO matrix. Furthermore, photoluminescence indicates that the band gap of the ZnO increases with a higher Nb content, which is explained by the Burstein-Moss effect. For TFT applications, a growth temperature of 175 °C for 3.8% NbZnO provided the best TFT characteristics with a saturation mobility of 7.9 cm2/Vs, the current On/Off ratio of 1 × 108, and the subthreshold swing of 0.34 V/decade. The transport is seen to follow a multiple-trap and release mechanism at lower gate voltages and percolation thereafter.

  5. Chromium and yttrium-doped magnesium aluminum oxides prepared from layered double hydroxides

    NASA Astrophysics Data System (ADS)

    García-García, J. M.; Pérez-Bernal, M. E.; Ruano-Casero, R. J.; Rives, V.

    2007-12-01

    Layered double hydroxides with the hydrotalcite-like structures, containing Mg 2+ and Al 3+, doped with Cr 3+ and Y 3+, have been prepared by precipitation at constant pH. The weight percentages of Cr 3+ and Y 3+ were 1, 2, or 3%, and 0.5 or 1%, respectively. Single phases were obtained in all cases, whose crystallinity decreased as the content in Cr and Y was increased. The solids have been characterised by element chemical analysis, powder X-ray diffraction, thermal analyses (differential, thermogravimetric and programmed reduction), FT-IR and UV-vis spectroscopies; the specific surface areas have been determined from nitrogen adsorption isotherms at -196 °C. Upon calcination at 1200 °C for 5 h in air all solids display a mixed structure (spinel and rock salt for MgO); these solids have also been characterised by these techniques and their chromatic coordinates (CIE - L∗a∗b∗) have been determined. Their pink colour makes these solids suitable for being used as ceramic pigments.

  6. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    SciTech Connect

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; Cava, R. J.

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which the materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.

  7. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    DOE PAGES

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; ...

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which themore » materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.« less

  8. Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Blagoev, B. S.; Dimitrov, D. Z.; Mehandzhiev, V. B.; Kovacheva, D.; Terziyska, P.; Pavlic, J.; Lovchinov, K.; Mateev, E.; Leclercq, J.; Sveshtarov, P.

    2016-03-01

    Al-doped ZnO thin films with different Al content were prepared by atomic layer deposition (ALD). To carry out thermal ALD, diethyl zinc (DEZ) and tri-methyl aluminium (TMA) were used as Zn and Al precursors, respectively, and water vapor as oxidant. Various numbers n of DEZ and m TMA cycles was used to obtain different [ZnO] n [Al2O3] m films, where n = 100 - 95, m = 1 - 5. The X-ray diffraction analysis showed a predominantly (100) oriented polycrystalline phase for the ZnO:Al films with a low Al content (m = 1 - 3) and an amorphous structure for pure Al2O3. In ZnO:Al with a higher Al content (m = 4 - 6) the (100) reflection disappeared and the (002) peak increased. The resistivity of the films decreased with the increase in the Al content, reaching a minimum of 3.3×10-3 Ω cm at about 1.1 % Al2O3 for the [ZnO]99[Al2O3]2 sample; for higher dopant concentrations, the resistivity increased because of the increased crystal inhomogeneity due to axis reorientation.

  9. Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

    NASA Astrophysics Data System (ADS)

    Cordova, Isvar A.; Peng, Qing; Ferrall, Isa L.; Rieth, Adam J.; Hoertz, Paul G.; Glass, Jeffrey T.

    2015-07-01

    Correction for `Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films' by Isvar A. Cordova, et al., Nanoscale, 2015, 7, 8584-8592.

  10. Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films.

    PubMed

    Cordova, Isvar A; Peng, Qing; Ferrall, Isa L; Rieth, Adam J; Hoertz, Paul G; Glass, Jeffrey T

    2015-07-28

    Correction for 'Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films' by Isvar A. Cordova, et al., Nanoscale, 2015, 7, 8584-8592.

  11. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

    SciTech Connect

    Tsai, Jung-Hui Ye, Sheng-Shiun; Guo, Der-Feng; Lour, Wen-Shiung

    2012-04-15

    Influence corresponding to the position of {delta}-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower {delta}-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper {delta}-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower {delta}-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.

  12. Cornlike Ordered Mesoporous Silicon Particles Modified by Nitrogen-Doped Carbon Layer for the Application of Li-Ion Battery.

    PubMed

    Lu, Bing; Ma, Bingjie; Deng, Xinglan; Li, Wangwu; Wu, Zhenyu; Shu, Hongbo; Wang, Xianyou

    2017-09-15

    The cornlike ordered mesoporous silicon (OM-Si) particles modified by the nitrogen-doped carbon layer (OM-Si@NC) are successfully fabricated and used as the anode of lithium-ion battery (LIBs). The influences of the N-doped carbon layer on the structure and electrochemical properties of the OM-Si@NC composite are detailedly investigated by transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman spectrum, X-ray photoelectron spectroscopy (XPS), and charge/discharge tests. The results reveal that the amorphous N-doped carbon layer can offer the abundant conductive pathways for fast lithium ion transportation and electron transfer, which not only leads to a high specific capacity under high ampere density but also serves as a structural barrier maintaining the whole integrity and settling the mechanical breaking due to the huge volume changes of Si host. Therefore, the as-synthesized OM-Si@NC composite exhibits a high original discharge capacity of 2548 mA h g(-1) under 0.2 A g(-1) as well as a large reversible capacity of 1336 mA h g(-1) under 1 A g(-1) after 200 circles. The OM-Si@NC composite prepared by a relatively simple and feasible synthesis method shows excellent electrochemical performances and turns out to be promising for the application of high power LIBs.

  13. Electrochemical capacitance-voltage measurements and modeling of GaAs nanostructures with delta-doped layers

    NASA Astrophysics Data System (ADS)

    Shestakova, L.; Yakovlev, G.; Zubkov, V.

    2017-03-01

    The paper presents the results of electrochemical capacitance-voltage profiling and simulation of quantum-sized semiconductor structures with quantum wells and delta-doped layers based on gallium arsenide. The experimental ECV data were obtained by superposition of measured capacitance-voltage characteristics during the gradual etching of the nanostructure. As a result of simulation, the concentration distribution and energy lineups for structures with delta-layers and quantum wells in gallium arsenide were calculated. The results of simulation are in qualitative agreement with the experimental results and data found in literature.

  14. The influence of doping and post-treatment on optical-electrical properties of novel window layers

    NASA Astrophysics Data System (ADS)

    Liu, Xingzuo; Shen, Jiesheng; Zhao, Yue

    2016-10-01

    In this paper, vacuum thermal evaporation and direct current magnetron sputtering technique are used to produce a novel window layer with the structure of i-ZnO/AZO/Ag(In):AZO. Based on the traditional i-ZnO/AZO window layer, the metal Ag (In) thin film is deposited on the surface of this double-layer thin film to form a new window layer with the structure of i-ZnO/AZO/Ag (In):AZO. Comparing with the traditional i-ZnO/AZO window layer, the deposited metal Ag (In) thin film on the surface of traditional i-ZnO/AZO window layer may lead to the reduction in resistivity and transmittance, which can be attributed to high conductivity and high reflectivity of deposited metal Ag (In) thin film. After annealing, the resistance of novel window layer with the structure of i-ZnO/AZO/In:AZO has a large reduction, but the change of resistance of novel i-ZnO/AZO/Ag:AZO window layer shows a opposite trend. This phenomenon may be related to the different number of valence electron of doping element. Furthermore, the annealing process promotes the recrystallization process to decrease the internal stress and the crystal structure defects, which leads to an obvious decrease in the transmittance and the carrier scattering rate of novel window layer.

  15. High performance novel gadolinium doped ceria/yttria stabilized zirconia/nickel layered and hybrid thin film anodes for application in solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Garcia-Garcia, F. J.; Beltrán, A. M.; Yubero, F.; González-Elipe, A. R.; Lambert, R. M.

    2017-09-01

    Magnetron sputtering under oblique angle deposition was used to produce Ni-containing ultra thin film anodes comprising alternating layers of gadolinium doped ceria (GDC) and yttria stabilized zirconia (YSZ) of either 200 nm or 1000 nm thickness. The evolution of film structure from initial deposition, through calcination and final reduction was examined by XRD, SEM, TEM and TOF-SIMS. After subsequent fuel cell usage, the porous columnar architecture of the two-component layered thin film anodes was maintained and their resistance to delamination from the underlying YSZ electrolyte was superior to that of corresponding single component Ni-YSZ and Ni-GDC thin films. Moreover, the fuel cell performance of the 200 nm layered anodes compared favorably with conventional commercially available thick anodes. The observed dependence of fuel cell performance on individual layer thicknesses prompted study of equivalent but more easily fabricated hybrid anodes consisting of simultaneously deposited Ni-GDC and Ni-YSZ, which procedure resulted in exceptionally intimate mixing and interaction of the components. The hybrids exhibited very unusual and favorable Isbnd V characteristics, along with exceptionally high power densities at high currents. Their discovery is the principal contribution of the present work.

  16. Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer.

    PubMed

    Chen, Fei; Lin, Qingli; Wang, Hongzhe; Wang, Lei; Zhang, Fengjuan; Du, Zuliang; Shen, Huaibin; Li, Lin Song

    2016-12-01

    In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate ( PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in PSS, the optimal devices were obtained with ~22-nm-sized Au NP dopant at the concentration with an optical density (OD) of 0.21. Highly bright green QLEDs with a maximum external quantum efficiency (EQE) of 8.2 % and a current efficiency of 29.1 cd/A exhibit 80 % improvement compared with devices without Au NP dopants. The improved performance may be attributed to the significant increase in the hole injection rate as a result of the introduction of Au NPs and the good matching between the resonance frequency of the localized surface plasmon resonance (LSPR) generated by the Au NPs and the emission band of QD layer, as well as the suppressed Auger recombination of QD layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons. These results are helpful for fabricating high-performance QD-based applications, such as full-color displays and solid-state lighting. 80 % enhancement of efficency of quantum dot-based light-emitting diodes with gold nanoparticle doped hole-injection-layer.

  17. Efficiency enhancement of solution-processed inverted organic solar cells with a carbon-nanotube-doped active layer

    NASA Astrophysics Data System (ADS)

    Lin, Wen-Kai; Su, Shui-Hsiang; Yeh, Meng-Cheng; Huang, Yang-Chan; Yokoyama, Meiso

    2016-01-01

    Solution-processed titanium-doped ZnO (TZO) is synthesized by the sol-gel method to be the electron-transporting layer (ETL) in an inverted organic solar cell (IOSC). Carbon nanotubes (CNTs) are doped into an active layer of poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM). The addition of CNTs in the P3HT:PCBM composite increases the conjugation length of P3HT:PCBM:CNTs, which simultaneously enhances the capacity of the composite to absorb solar energy radiation. Vanadium oxide (V2O5) was spin-coated onto the active layer to be a hole-transporting layer (HTL). The power conversion efficiency (PCE) results indicate that the V2O5 nanobelt structure possesses better phase separation and provides a more efficient surface area for the P3HT:PCBM:CNT active layer to increase photocurrent. The optimized IOSCs exhibited an open circuit voltage (Voc), a short-circuit current density (Jsc), a fill factor (FF), and a PCE of 0.55 V, 6.50 mA/cm2, 58.34%, and 2.20%, respectively, under simulated AM1.5G illumination of 100 mW/cm2.

  18. Highly efficient tandem organic light-emitting devices utilizing the connecting structure based on n-doped electron-transport layer/HATCN/hole-transport layer.

    PubMed

    Wu, Yi-Lin; Chen, Chien-Yu; Huang, Yi-Hsiang; Lu, Yin-Jui; Chou, Cheng-Hsu; Wu, Chung-Chih

    2014-08-01

    In this work, we conducted studies of tandem organic light-emitting devices (OLEDs) based on the connecting structure consisting of n-doped electron-transport layer (n-ETL)/1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN)/hole-transport layer. We investigated effects of different n-ETL materials and different HATCN thicknesses on characteristics of tandem OLEDs. Results show that the tandem OLEDs with n-BPhen and a 20 nm layer of HATCN in the connecting structure exhibited the best performance. With these, highly efficient and bright green phosphorescent two-emitting-unit tandem OLEDs, with drive voltages significantly lower than twice that of the single-unit benchmark device and current efficiencies higher than twice that of the single-unit benchmark device, were demonstrated.

  19. Lead-nano-dopings effects on the structural, microstructural, vibrational and thermal properties of Bi 2- xPb xSrV 2O 9 layered perovskite

    NASA Astrophysics Data System (ADS)

    Elsabawy, Khaled M.; Abou Sekkina, Morsy M.; Asker, Mohamed A.; El-Newehy, Mohamed H.

    2010-07-01

    The sample with in the general formula Bi 2-xPb xSrV 2O 9, where x = 0.0, 0.05, 0.1, 0.2, 0.3, and 0.6 mol were synthesized by the high temperature solid state reaction and firing method. The X-ray diffractograms confirmed the formation of single phased layered perovskite in all samples. TGA and DTA thermal analyses on the green samples included steps of thermal analysis of strontium carbonate, bismuth carbonate, ammonium vanadate, lead oxide and finally on the high temperature solid state formation. The effect of lead dopings on the sintering, structural and micro-structure, properties of 212BiSrV-ceramics were investigated. The infrared absorption spectra show a series of vibrational modes within the range of 400-1600 cm -1.

  20. Doping ZnO with Water/Alcohol-Soluble Small Molecules as Electron Transport Layers for Inverted Polymer Solar Cells.

    PubMed

    Liu, Chang; Zhang, Lin; Xiao, Liangang; Peng, Xiaobin; Cao, Yong

    2016-10-03

    By doping ZnO with porphyrin small molecules (FNEZnP-OE and FNEZnP-T) as cathode electron transport layers (ETLs), the inverted polymer solar cells (i-PSC) with PTB7:PC71BM (PTB7: polythieno[3,4-b]-thiophene-co-benzodithiophene, PC71BM: [6, 6]-phenyl-C71-butyric acid methyl ester) as the active materials exhibit enhanced device performance. While the power conversion efficiency (PCE) of the PSCs with pure ZnO ETL is 7.52%, that of the devices with FNEZnP-T-doped ZnO ETL shows a slightly improved PCE of 8.09%, and that of the PSCs with FNEZnP-OE-doped ZnO ETL is further enhanced up to 9.24% with an over 20% improvement compared to that with pure ZnO ETL. The better performance is contributed by the better interfacial contact and reduced work function induced by 9,9-bis(30-(N,N-dimethylamino)propyl)-2,7-fluorenes and 3,4-bis-(2-(2-methoxy-ethoxy)-ethoxy)-phenyls in the porphyrin small molecules. More importantly, the PCE is still higher than 8% even when the thickness of FNEZnP-OE-doped ZnO ETL is up to 110 nm, which are important criteria for eventually making organic photovoltaic modules with roll-to-roll coat processing.

  1. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

    PubMed Central

    2012-01-01

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). PACS: 81.15.Gh. PMID:22297193

  2. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

    PubMed

    Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

    2012-02-02

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.

  3. A new self-assembled layer-by-layer glucose biosensor based on chitosan biopolymer entrapped enzyme with nitrogen doped graphene.

    PubMed

    Barsan, Madalina M; David, Melinda; Florescu, Monica; Ţugulea, Laura; Brett, Christopher M A

    2014-10-01

    The layer-by-layer (LbL) technique has been used for the construction of a new enzyme biosensor. Multilayer films containing glucose oxidase, GOx, and nitrogen-doped graphene (NG) dispersed in the biocompatible positively-charged polymer chitosan (chit(+)(NG+GOx)), together with the negatively charged polymer poly(styrene sulfonate), PSS(-), were assembled by alternately immersing a gold electrode substrate in chit(+)(NG+GOx) and PSS(-) solutions. Gravimetric monitoring during LbL assembly by an electrochemical quartz microbalance enabled investigation of the adsorption mechanism and deposited mass for each monolayer. Cyclic voltammetry and electrochemical impedance spectroscopy were used to characterize the LbL modified electrodes, in order to establish the contribution of each monolayer to the overall electrochemical properties of the biosensor. The importance of NG in the biosensor architecture was evaluated by undertaking a comparative study without NG in the chit layer. The GOx biosensor's analytical properties were evaluated by fixed potential chronoamperometry and compared with similar reported biosensors. The biosensor operates at a low potential of -0.2V vs., Ag/AgCl, exhibiting a high sensitivity of 10.5 μA cm(-2) mM(-1), and a detection limit of 64 μM. This study shows a simple approach in developing new biosensor architectures, combining the advantages of nitrogen-doped graphene with the LbL technique for enzyme immobilization. Copyright © 2014 Elsevier B.V. All rights reserved.

  4. Surface modification of nitrogen-doped carbon nanotubes by ozone via atomic layer deposition

    SciTech Connect

    Lushington, Andrew; Liu, Jian; Tang, Yongji; Li, Ruying; Sun, Xueliang

    2014-01-15

    The use of ozone as an oxidizing agent for atomic layer deposition (ALD) processes is rapidly growing due to its strong oxidizing capabilities. However, the effect of ozone on nanostructured substrates such as nitrogen-doped multiwalled carbon nanotubes (NCNTs) and pristine multiwalled carbon nanotubes (PCNTs) are not very well understood and may provide an avenue toward functionalizing the carbon nanotube surface prior to deposition. The effects of ALD ozone treatment on NCNTs and PCNTs using 10 wt. % ozone at temperatures of 150, 250, and 300 °C are studied. The effect of ozone pulse time and ALD cycle number on NCNTs and PCNTs was also investigated. Morphological changes to the substrate were observed by scanning electron microscopy and high resolution transmission electron microscopy. Brunauer-Emmett-Teller measurements were also conducted to determine surface area, pore size, and pore size distribution following ozone treatment. The graphitic nature of both NCNTs and PCNTs was determined using Raman analysis while x-ray photoelectron spectroscopy (XPS) was employed to probe the chemical nature of NCNTs. It was found that O{sub 3} attack occurs preferentially to the outermost geometric surface of NCNTs. Our research also revealed that the deleterious effects of ozone are found only on NCNTs while little or no damage occurs on PCNTs. Furthermore, XPS analysis indicated that ALD ozone treatment on NCNTs, at elevated temperatures, results in loss of nitrogen content. Our studies demonstrate that ALD ozone treatment is an effective avenue toward creating low nitrogen content, defect rich substrates for use in electrochemical applications and ALD of various metal/metal oxides.

  5. Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Rönn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-02-01

    We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

  6. Driving voltage reduction in white organic light-emitting devices from selectively doping in ambipolar blue-emitting layer

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Hung; Lin, Chi-Feng; Lee, Jiun-Haw

    2007-11-01

    White organic light-emitting devices (OLEDs) consisting of ambipolar 9,10-bis(2'-naphthyl) anthracene (ADN) as a host of blue-emitting layer (EML) were investigated. A thin codoped layer of yellow 5,6,11,12-Tetraphenylnaphthacene (rubrene) served as a probe for detecting the position of maximum recombination rate in the 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi) doped-ADN EML. Due to the energy barrier and bipolar carrier transport, the maximum recombination rate was found to be close to but not exactly at the interface of the hole-transporting layer and the EML. With appropriate tuning in the thickness, position, and dopant concentrations of the codoped layer (rubrene:DPAVBi:ADN) in the EML, the device driving voltage decreased by 21.7%, nearly 2 V in reduction, due to the increased recombination current from the faster exciton relaxation induced by the yellow dopants. Among the advantages of introducing the codoped layer over conventional single-doped layers are the elimination of the trapping effect to avoid increasing the device driving voltage, the alleviation of the dependence of the recombination zone on the applied voltage for improving color stability, and the utilization of excitons in a more efficient way to enhance device efficiency. Without using any electrically conductive layers such as the p-i-n structure, we were able to successfully generate 112 cd/m2 at 4 V from our white OLED simply by engineering the structure of the EML.

  7. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    SciTech Connect

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-12-28

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  8. Electronic properties of δ-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method

    NASA Astrophysics Data System (ADS)

    Smith, J. S.; Cole, J. H.; Russo, S. P.

    2014-01-01

    We present a scalable method for calculating the electronic properties of a δ-doped phosphorus layer in silicon and germanium. Our calculations are based on an sp3d5s* tight-binding model and the Thomas-Fermi-Dirac approximation. The energy shift in the lowest conduction band states of the Ge band structure is characterized and a comparison is made to a δ-doped P layer in Si. The results for the δ-doped Si:P layer themselves compare well to the predictions of more "resource intensive" computational models. The Thomas-Fermi method presented herein scales easily to large system sizes. Efficient scaling is important for the calculation of quantum transport properties in δ-doped semiconductors that are currently of experimental interest.

  9. The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers

    NASA Astrophysics Data System (ADS)

    Koller, Christian; Pobegen, Gregor; Ostermaier, Clemens; Huber, Martin; Pogany, Dionyz

    2017-07-01

    In carbon-doped GaN (GaN:C) buffers used in a GaN-on-Si technology, the buffer is embedded in between transition and channel layers. This makes the analysis of buffer properties difficult due to e.g., carrier injection from or potential drop at these adjacent layers. Here, we analyze capacitance- and current-voltage characteristics of 200-300 nm thick GaN:C ([C] = 1019 cm-3) layers which are embedded between a top metal electrode and bottom n-doped GaN (n-GaN). Such structures allow a better potential control in GaN:C and thus determination of the band diagram quantitatively. The accumulation of negative charge (concentration up to 6 × 1017 cm-3) with bias is observed in GaN:C at both polarities. For biases Vappl < +1.7 V at the top electrode, negative charges accumulate in GaN:C near to its interface with n-GaN so that GaN:C exhibits no potential drop and blocks leakage current. For Vappl > +1.7 V, accumulated negative charges in GaN:C raise an energy barrier of ˜1.1 eV for electron injection from n-GaN to GaN:C. This causes a potential drop in GaN:C leading to a significant leakage current increase. The Fermi level pinning in GaN:C at a commonly referred acceptor at EV + 0.7(±0.2) eV is extracted only from electrostatic considerations. The occupancy change of carbon acceptors is attributed to trapping processes where the dislocation-related conductive paths are supposed to be involved in carrier transport from the top metal electrode to the carbon defect.

  10. Influence of the thickness and doping of the emission layer on the performance of organic light-emitting diodes with PiN structure

    NASA Astrophysics Data System (ADS)

    Huang, Jingsong; Blochwitz-Nimoth, Jan; Pfeiffer, Martin; Leo, Karl

    2003-01-01

    We have studied the behavior of various intrinsic emission zones on the characteristics of organic light-emitting diodes with a p-doped hole-transport layer and an n-doped electron-transport layer based on our previous work [J. S. Huang, M. Pfeiffer, A. Werner, J. Blochwitz, K. Leo, and S. Liu, Appl. Phys. Lett. 80, 139 (2002)]. This configuration is referred to as a PiN structure. Because the p- and n-doped regions occupy nearly 80% of the total thickness in our PiN device, the intrinsic region becomes a narrow layer between two doped regions. This intrinsic region includes the region where the radiative recombination occurs. Thus, the nature of this layer plays an important role in determining the actual device performance. Employing 8-tris-hydroxyquinoline aluminum as an emitter, we investigated the influence of the thickness of the emitter layer on the performance of the device. The optimum thickness of the emitter layer is found to be 20 nm. Combining the fluorescence dye doping method, we have optimized the PiN structure device. Two emitter systems have been used: Alq3 doped with two highly fluorescent laser dyes, Quinacridone or Coumarin 6, respectively. We have demonstrated the influence of the thickness and the doping of the emission zone on the characteristics of a doped emitter device with PiN structure, and obtained higher-efficiency PiN structure devices. The different properties of PiN devices corresponding to two different emitter dopants with different trapping effect are also discussed.

  11. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

    NASA Astrophysics Data System (ADS)

    Jang, Cholho; Zhizhen, Ye; Jianguo, Lü

    2015-12-01

    Ga doped ZnO (GZO)/Cu grid double layer structures were prepared at room temperature (RT). We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit (ΦTC = 6.19 × 10-3 Ω-1) was obtained. In this case, the transmittance, resistivity and filling factor (FF) of the GZO/Cu grid double layer are 83.74%, 1.10 × 10-4 Ω·cm and 0.173, respectively. Project supported by the Key Project of the National Natural Science Foundation of China (No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT13037), the National Natural Science Foundation of China (No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China (No. 2010R50020).

  12. In situ nitrogen doping of TiO2 by plasma enhanced atomic layer deposition for enhanced sodium storage performance.

    PubMed

    Lin, Jinhuan; Ma, Dingtao; Li, Yongliang; Zhang, Peixin; Mi, Hongwei; Deng, Libo; Sun, Lingna; Ren, Xiangzhong

    2017-10-14

    Nitrogen-doped TiO2 is in situ synthesized by plasma enhanced atomic layer deposition on carbon nanotubes (N-TiO2/CNTs). The prepared N-TiO2/CNT nanocomposites are employed as anode materials for sodium ion batteries. The specific capacity of an N-TiO2/CNT electrode is 1.45 times higher than that of a TiO2/CNT electrode at a current density of 50 mA g(-1) after 200 cycles. It is demonstrated that N-TiO2/CNTs are more effective in an electrochemical Na cell due to the enhanced kinetics which results from the nitrogen-doping and the amorphous feature.

  13. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    DOE PAGES

    Ming, Fangfei; Mulugeta Amare, Daniel; Tu, Weisong; ...

    2017-03-07

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Itsmore » formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.« less

  14. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    PubMed Central

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D.; Snijders, Paul C.; Weitering, Hanno H.

    2017-01-01

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform. PMID:28266499

  15. Metal-Doped Silver Oxide Films as a Mask Layer for the Super-RENS Disk

    NASA Astrophysics Data System (ADS)

    Shima, Takayuki; Buechel, Dorothea; Mihalcea, Christophe; Kim, Jooho; Atoda, Nobufumi; Tominaga, Junji

    Various kinds of metal (Co, Pd, Pt and Au) were doped into Ag2O and AgO sputtered films to study its effect on the thermal decomposition process. The oxygen composition ratio was evaluated by the X-ray fluorescence spectroscopy method after annealing up to 260,oC. The optical transmittance change was measured during heating of the film to 600,oC. Noble metal doping was found to modify the AgO decomposition process, and the oxygen content decreased gradually compared to the undoped case. Super-RENS disks with a metal-doped AgO mask were prepared, and the laser power necessary for super-resolutional readout was evaluated. It slightly shifted to the higher-power side when the noble metal was doped, and this agrees with the modification of the decomposition process.Japan Science and Technology Corporation, Domestic Research Fellow

  16. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping.

    PubMed

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D; Snijders, Paul C; Weitering, Hanno H

    2017-03-07

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

  17. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

    NASA Astrophysics Data System (ADS)

    Ming, Fangfei; Mulugeta, Daniel; Tu, Weisong; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Huang, Ying-Tzu; Diehl, Renee D.; Snijders, Paul C.; Weitering, Hanno H.

    2017-03-01

    Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

  18. Solution-Processed Lithium-Doped ZnO Electron Transport Layer for Efficient Triple Cation (Rb, MA, FA) Perovskite Solar Cells.

    PubMed

    Mahmud, Md Arafat; Elumalai, Naveen Kumar; Upama, Mushfika Baishakhi; Wang, Dian; Soufiani, Arman Mahboubi; Wright, Matthew; Xu, Cheng; Haque, Faiazul; Uddin, Ashraf

    2017-10-04

    The current work reports the lithium (Li) doping of a low-temperature processed zinc oxide (ZnO) electron transport layer (ETL) for highly efficient, triple-cation-based MA0.57FA0.38Rb0.05PbI3 (MA: methylammonium, FA: formamidinium, Rb: rubidium) perovskite solar cells (PSCs). Lithium intercalation in the host ZnO lattice structure is dominated by interstitial doping phenomena, which passivates the intrinsic defects in ZnO film. In addition, interstitial Li doping also downshifts the Fermi energy position of Li-doped ETL by 30 meV, which contributes to the reduction of the electron injection barrier from the photoactive perovskite layer. Compared to the pristine ZnO, the power conversion efficiency (PCE) of the PSCs incorporating lithium-doped ZnO (Li-doped) is raised from 14.07 to 16.14%. The superior performance is attributed to the reduced current leakage, enhanced charge extraction characteristics, and mitigated trap-assisted recombination phenomena in Li-doped devices, thoroughly investigated by means of electrochemical impedance spectroscopy (EIS) analysis. Li-doped PSCs also exhibit lower photocurrent hysteresis than ZnO devices, which is investigated with regard to the electrode polarization phenomena of the fabricated devices.

  19. Al doped ZnO nanogranular film fabricated by layer-by-layer self-assembly method and its application for gas sensors.

    PubMed

    Hao, Weichang; Sun, Meng; Xu, Huaizhe; Wang, Tianmin

    2011-12-01

    ZnO is one of the most promising materials for gas sensor. Nanogranular films with ultrahigh surface-to-volume ratio have great potential in gas sensor application. In this paper, Al doped ZnO nanogranular films were fabricated by layer-by-layer (LBL) self-assembly method and the gas sensitivity of ZnO films were investigated. The results show that sensitivity of Al:ZnO gas sensors is up to 12 against 20000 ppm hydrogen, while the response time and recovery time of the sensor are only 12 s and 25 s respectively. The high sensitivity is attributed to the high surface-to-volume ratio of nanogranular and porous structure of self-assembled films.

  20. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

    NASA Astrophysics Data System (ADS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2014-07-01

    We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiNx) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiNx/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiNx passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiNx films. The outstanding results obtained imply that SiNx/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

  1. Tungsten oxide doped N ,N'-di(naphthalen-1-yl)-N ,N'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Wang, Fengxia; Qiao, Xianfeng; Xiong, Tao; Ma, Dongge

    2009-04-01

    By introducing tungsten oxide (WO3) doped N ,N'-di(naphthalen-1-yl)-N ,N'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq3)-based device, the maximum efficiency reached 6.1 cd A-1 and 4.8 lm W-1, which were much higher than 4.5 cd A-1 and 1.1 lm W-1 of NPB/Alq3 device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A-1 (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 °C. These results adequately indicated that WO3 doped NPB was a promising hole injection layer for high efficiency and high stability OLEDs.

  2. Final-state effect on X-ray photoelectron spectrum of n-doped SrTiO3

    NASA Astrophysics Data System (ADS)

    Lin, Chungwei; Posadas, Agham; Demkov, Alexander; Demkov Team

    2015-03-01

    X-ray photoelectron spectroscopy (XPS) is a widely used technique to determine the oxidation states of chemical elements. In stoichiometric SrTiO3, the Ti4+ peak appears at a binding energy of about 459.0 eV for photoelectrons ejected from the Ti 2 p core level. In lightly n-doped SrTiO3, a weak shoulder at a binding energy of about 1.5 eV lower than the Ti4+ peak appears in the XPS spectrum that has been conventionally interpreted as a Ti3+ signal. By taking the final-state effect into account, i.e. by considering the response of the valence electrons in the presence of a core hole, we argue that such a Ti3+ peak does not necessarily imply the existence of spatially localized Ti3+ ions, and explicitly show that a spatially uniform Ti(4 - x) + distribution also leads to the multi-peak structure. Spectra from metallic n-doped SrTiO3 (e.g. La replacing Sr, Nb replacing Ti, or even oxygen vacancy doping) should be interpreted as the latter case. Several experiments based on this interpretation are discussed. Support for this work was provided through Scientific Discovery through Advanced Computing (SciDAC) program funded by U.S. DOE, Office of Science, Advanced Scientific Computing Research and Basic Energy Sciences under award number DESC0008877.

  3. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  4. High-performance quantum dot light-emitting diodes with hybrid hole transport layer via doping engineering.

    PubMed

    Huang, Qianqian; Pan, Jiangyong; Zhang, Yuning; Chen, Jing; Tao, Zhi; He, Chao; Zhou, Kaifeng; Tu, Yan; Lei, Wei

    2016-11-14

    Here, we report on the hybrid hole transport materials 4,4'-bis-(carbazole-9-yl)biphenyl (CBP) or poly-N-vinylcarbazole (PVK) doped into poly(4-butyl-phenyl-diphenyl-amine) (Poly-TPD) as the hybrid hole transport layer (HTL) to tailor the energy band alignment between hole injection layer (HIL) and quantum dot (QD) light emitting layer in order to realize efficient quantum dot light emitting diodes (QLEDs) in all solution-processed fabrication. Compared to the pristine Poly-TPD based device, it is found that the electroluminescence (EL) performance of QLEDs can be significantly improved by 1.5 fold via addition of CBP into Poly-TPD, which can be attributed to the lowered highest occupied molecular orbital (HOMO) level of Poly-TPD to reduce the energy barrier between HTL and valance band (VB) of QDs. Thus, after doping small molecules into polymer under optimized proportion (Poly-TPD:CBP = 2:1 by weight), the hole transport rate can be balanced, facilitating the carrier injection from HTL to QDs and enhancing the efficiency of QLEDs. As a result, a maximum luminance, a maximum current efficiency and a maximum power efficiency of 7600 cd/m2, 5.41 cd/A and 4.25 lm/W can be obtained based on this variety of hybrid HTL employed QLEDs.

  5. Well-aligned Nd-doped SnO2 nanorod layered arrays: preparation, characterization and enhanced alcohol-gas sensing performance.

    PubMed

    Qin, Guohui; Gao, Fan; Jiang, Qiuping; Li, Yuehua; Liu, Yongjun; Luo, Li; Zhao, Kang; Zhao, Heyun

    2016-02-21

    Well-oriented neodymium doped SnO2 layered nanorod arrays were synthesized by a substrate-free hydrothermal route using sodium stannate and sodium hydroxide at 210 °C. The morphology and phase structure of the Nd-doped SnO2 nanoarrays were investigated by X-ray powder diffraction spectroscopy, scanning electron microscopy, transmission electron microscopy, Raman scattering spectroscopy, X-ray photoelectron spectroscopy and the BET method. The results demonstrated that the Nd-doped SnO2 layered nanorod arrays showed a unique nanostructure combined together with double layered arrays of nanorods with a diameter of 12 nm and a length of several hundred nanometers. The Nd-doped layered SnO2 nanoarrays kept the crystal structure of the bulk SnO2 and possessed more surface defects caused by the Nd ions doped into the SnO2 lattice. The Nd dopant acts as a crystallite growth inhibitor to prevent the growth of SnO2 nanorods. An investigation into the gas-sensing properties indicated that the optimized doping level of 3.0 at% Nd-doped SnO2 layered nanorod arrays exhibited an excellent sensing response toward alcohol at a lower temperature of 260 °C. The enhanced sensor performance was attributed to the higher specific surface area, multi-defect surface structure and the excellent catalytic properties of Nd dopant that is able to increase the amount of active sites on the surface of semiconducting oxides. The Nd-doped SnO2 nanoarray sensors were considered to be a promising candidate for trace alcohol detections in environmental gas monitoring.

  6. Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3.

    PubMed

    Ren, Xiaochen; Singh, Arunima K; Fang, Lei; Kanatzidis, Mercouri G; Tavazza, Francesca; Davydov, Albert V; Lauhon, Lincoln J

    2016-10-12

    Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom probe tomography (APT). APT analysis shows that Ag dopes both Bi2Se3 and PbSe layers in (PbSe)5(Bi2Se3)3, and correlations in the position of Ag atoms suggest a pairing across neighboring Bi2Se3 and PbSe layers. Density functional theory (DFT) calculations confirm the favorability of substitutional doping for both Pb and Bi and provide insights into the observed spatial correlations in dopant locations.

  7. A SnO2-samarium doped ceria additional anode layer in a direct carbon fuel cell

    NASA Astrophysics Data System (ADS)

    Yu, Baolong; Zhao, Yicheng; Li, Yongdan

    2016-02-01

    The role of a SnO2-samarium doped ceria (SDC) additional anode layer in a direct carbon fuel cell (DCFC) with SDC-(Li0.67Na0.33)2CO3 composite electrolyte and lithiated NiO-SDC-(Li0.67Na0.33)2CO3 composite cathode is investigated and compared with a NiO-SDC extra anode layer. Catalytic grown carbon fiber mixed with (Li0.67Na0.33)2CO3 is used as a fuel. At 750 °C, the maximum power outputs of 192 and 143 mW cm-2 are obtained by the cells with SnO2-SDC and NiO-SDC layers, respectively. In the SnO2-SDC layer, the reduction of SnO2 and the oxidation of Sn happen simultaneously during the cell operation, and the Sn/SnO2 redox cycle provides an additional route for fuel conversion. The formation of an insulating dense interlayer between the anode and electrolyte layers, which usually happens in DCFCs with metal anodes, is avoided in the cell with the SnO2-SDC layer, and the stability of the cell is improved consequently.

  8. Doped lanthanum nickelates with a layered perovskite structure as bifunctional cathode catalysts for rechargeable metal-air batteries.

    PubMed

    Jung, Kyu-Nam; Jung, Jong-Hyuk; Im, Won Bin; Yoon, Sukeun; Shin, Kyung-Hee; Lee, Jong-Won

    2013-10-23

    Rechargeable metal-air batteries have attracted a great interest in recent years because of their high energy density. The critical challenges facing these technologies include the sluggish kinetics of the oxygen reduction-evolution reactions on a cathode (air electrode). Here, we report doped lanthanum nickelates (La2NiO4) with a layered perovskite structure that serve as efficient bifunctional electrocatalysts for oxygen reduction and evolution in an aqueous alkaline electrolyte. Rechargeable lithium-air and zinc-air batteries assembled with these catalysts exhibit remarkably reduced discharge-charge voltage gaps (improved round-trip efficiency) as well as high stability during cycling.

  9. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films

    SciTech Connect

    Mann, Harkirat S.; Lang, Brian N.; Schwab, Yosyp; Scarel, Giovanna; Niemelä, Janne-Petteri; Karppinen, Maarit

    2015-01-15

    Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.

  10. Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer.

    PubMed

    Ryu, Han-Youl; Jeon, Ki-Seong; Kang, Min-Goo; Choi, Yunho; Lee, Jeong-Soo

    2013-01-14

    We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are found to increase as the thickness or doping concentration increases due to the improvement of current spreading. On the contrary, the light extraction efficiency (LEE) decreases with increasing doping concentration or n-GaN thickness by the free-carrier absorption. By combining the results of EE, IQE, and LEE, wall-plug efficiency (WPE) of the vertical LED is calculated, and the optimum thickness and doping concentration of the n-GaN layer is found for obtaining the maximum WPE.

  11. Thickness-dependent growth orientation of F-doped ZnO films formed by atomic layer deposition

    SciTech Connect

    Kang, Kyung-Mun; Choi, Yong-June; Park, Hyung-Ho; Yeom, Geun Young

    2016-01-15

    ZnO thin films were doped with fluorine using atomic layer deposition (ALD) with an in-house F source at a deposition temperature of 140 °C. Structural and morphological properties of the resulting F-doped ZnO (ZnO:F) films were investigated by x-ray diffraction analysis, field emission scanning electron microscopy, and grazing incidence wide-angle x-ray diffraction. During the initial growth stage of up to 200 ALD cycles, no difference was observed between the preferred growth orientations of undoped ZnO and ZnO:F films. However, after 300 ALD cycles, ZnO and ZnO:F films showed (002) and (100) preferred orientation, respectively. This difference in preferred growth orientation arose from the perturbation-and-passivation effect of F doping, which involves F anions filling the oxygen-related defect sites in the ZnO lattice. Ultraviolet photoelectron spectroscopic analyses were carried out to investigate the surface plane dependency of the films' work functions, which confirmed that the ZnO and ZnO:F films had different growth behaviors.

  12. Effects of a Pretreatment on Al-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

    PubMed

    Ko, Byoung-Soo; Lee, Sang-Ju; Kim, Dae-Hwan; Hwang, Dae-Kue

    2015-03-01

    In this study, we investigated the electrical, structural, and optical properties of Al-doped ZnO (AZO) thin films approximately 50 nm thick grown by atomic layer deposition (ALD) on glass substrates at 200 °C. An H2O pretreatment was conducted for all AZO samples. The electrical properties of the AZO thin film were improved after the pretreatment process. The Al doping concentrations were controlled by inserting an Al2O3 cycle after every "n" ZnO cycles while varying n from 99 to 16. As the doping concentration increases, the resistivity decreases and the optical band gap increases. When the Al2O3 cycle ratio is 5%, the electrical resistivity showed the lowest value of 4.66 x 10(-3) Ω cm. A carrier concentration of 1.10 x 10(20) cm(-3), and the optical transmittance exceeding 90% were obtained in the visible and near-infrared region. The thin film was strongly textured along the (100) direction in the X-ray diffraction patterns.

  13. Direct electrochemistry of Shewanella loihica PV-4 on gold nanoparticles-modified boron-doped diamond electrodes fabricated by layer-by-layer technique.

    PubMed

    Wu, Wenguo; Xie, Ronggang; Bai, Linling; Tang, Zuming; Gu, Zhongze

    2012-05-01

    Microbial Fuel Cells (MFCs) are robust devices capable of taping biological energy, converting pollutants into electricity through renewable biomass. The fabrication of nanostructured electrodes with good bio- and electrochemical activity, play a profound role in promoting power generation of MFCs. Au nanoparticles (AuNPs)-modified Boron-Doped Diamond (BDD) electrodes are fabricated by layer-by-layer (LBL) self-assembly technique and used for the direct electrochemistry of Shewanella loihica PV-4 in an electrochemical cell. Experimental results show that the peak current densities generated on the Au/PAH multilayer-modified BDD electrodes increased from 1.25 to 2.93 microA/cm(-2) as the layer increased from 0 to 6. Different cell morphologies of S. loihica PV-4 were also observed on the electrodes and the highest density of cells was attached on the (Au/PAH)6/BDD electrode with well-formed three-dimensional nanostructure. The electrochemistry of S. loihica PV-4 was enhanced on the (Au/PAH)4/BDD electrode due to the appropriate amount of AuNPsand thickness of PAH layer.

  14. 2D Layered Materials of Rare-Earth Er-Doped MoS2 with NIR-to-NIR Down- and Up-Conversion Photoluminescence.

    PubMed

    Bai, Gongxun; Yuan, Shuoguo; Zhao, Yuda; Yang, Zhibin; Choi, Sin Yuk; Chai, Yang; Yu, Siu Fung; Lau, Shu Ping; Hao, Jianhua

    2016-09-01

    A 2D system of Er-doped MoS2 layered nanosheets is developed. Structural studies indicate that the Er atoms can be substitutionally introduced into MoS2 to form stable doping. Density functional theory calculation implies that the system remains stable. Both NIR-to-NIR up-conversion and down-conversion light-emissions are observed in 2D transition metal dichalcogenides, ascribed to the energy transition from Er(3+) dopants.

  15. Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

    NASA Astrophysics Data System (ADS)

    Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

    2016-02-01

    The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

  16. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  17. Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots.

    PubMed

    Tang, Libin; Ji, Rongbin; Li, Xueming; Bai, Gongxun; Liu, Chao Ping; Hao, Jianhua; Lin, Jingyu; Jiang, Hongxing; Teng, Kar Seng; Yang, Zhibin; Lau, Shu Ping

    2014-06-24

    Material that can emit broad spectral wavelengths covering deep ultraviolet, visible, and near-infrared is highly desirable. It can lead to important applications such as broadband modulators, photodetectors, solar cells, bioimaging, and fiber communications. However, there is currently no material that meets such desirable requirement. Here, we report the layered structure of nitrogen-doped graphene quantum dots (N-GQDs) which possess broadband emission ranging from 300 to >1000 nm. The broadband emission is attributed to the layered structure of the N-GQDs that contains a large conjugated system and provides extensive delocalized π electrons. In addition, a broadband photodetector with responsivity as high as 325 V/W is demonstrated by coating N-GQDs onto interdigital gold electrodes. The unusual negative photocurrent is observed which is attributed to the trapping sites induced by the self-passivated surface states in the N-GQDs.

  18. Characterization of iron doped indium phosphide as a current blocking layer in buried heterostructure quantum cascade lasers

    NASA Astrophysics Data System (ADS)

    Nida, S.; Hinkov, B.; Gini, E.; Faist, J.

    2017-03-01

    This work analyzes transport through metal organic chemical vapour deposition grown Iron doped Indium Phosphide (InP:Fe) for use as a current blocking layer in buried heterostructure Quantum Cascade Lasers. The nature of Iron incorporation in InP and electrical transport properties of InP:Fe is investigated via simulation and compared with measurement. Through simulations, we are able to predict the threshold for the onset of current rise in test structures due to avalanche injection of carriers. In addition, the benefit of InAlAs barriers inserted in InP:Fe layers is investigated and found to reduce the leakage current at lower biases while delaying the onset of avalanche. In buried heterostructure configuration, we have determined that non ideal regrowth profiles make the structure more susceptible to high field effects such as avalanche injection and trap filling that induce leakage currents.

  19. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

    PubMed Central

    Seo, J. J.; Kim, B. Y.; Kim, B. S.; Jeong, J. K.; Ok, J. M.; Kim, Jun Sung; Denlinger, J. D.; Mo, S. -K.; Kim, C.; Kim, Y. K.

    2016-01-01

    A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3. PMID:27050161

  20. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal.

    PubMed

    Seo, J J; Kim, B Y; Kim, B S; Jeong, J K; Ok, J M; Kim, Jun Sung; Denlinger, J D; Mo, S-K; Kim, C; Kim, Y K

    2016-04-06

    A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3.

  1. Imaging of Compressed Pure-CH Shells and CH Shells with Titanium-Doped Layers on OMEGA

    NASA Astrophysics Data System (ADS)

    Smalyuk, V. A.; Yaakobi, B.; Goncharov, V. N.; Delettrez, J. A.; Marshall, F. J.; Meyerhofer, D. D.

    1999-11-01

    The compressed shell integrity of spherical targets has been studied using the 60-beam, 30-kJ UV, OMEGA laser system. The emission from the hot core has been imaged through the cold shell at two narrow, x-ray energy bands, absorbing and nonabsorbing by the shell, allowing nonuniformities in the core emission and the cold shell areal density to be measured. Images of the target have been obtained using a pinhole-array with K-edge filters. The x-ray energies used are around 2.8 and 4.5 keV for pure-CH shells, and around 4.5 and 6 keV for titanium-doped layers. Additional images of the shell are obtained with a framed monochromatic x-ray microscope and a time-integrated crystal-spectrometer/pinhole-array combination. We will present measurements of the compressed shell integrity at the stagnation stage of spherical implosions by varying the position of the titanium-doped layer within the shell, by varying the thickness of the CH shell, and by using two different laser pulse shapes. The experimental results will be compared with 2-D (ORCHID) hydrodynamic simulations. This work was supported by the U.S. Department of Energy Office of Inertial Confinement Fusion under Cooperative Agreement No. DE-FC03-92SF19460, the University of Rochester, and the New York State Energy Research and Development Authority.

  2. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

    SciTech Connect

    Seo, J. J.; Kim, B. Y.; Kim, B. S.; Jeong, J. K.; Ok, J. M.; Kim, Jun Sung; Denlinger, J. D.; Mo, S. -K.; Kim, C.; Kim, Y. K.

    2016-04-06

    A superconducting transition temperature (T c ) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO 3 . The discovery ignited efforts to identify the mechanism for the markedly enhanced T c from its bulk value of 8 K. There are two main views about the origin of the T c enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO 3 . Without interfacial effects, the surface layer state has a moderate T c of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum T c , which in turn reveals the need for interfacial effects to achieve the highest T c in one monolayer FeSe on SrTiO 3 .

  3. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

    DOE PAGES

    Seo, J. J.; Kim, B. Y.; Kim, B. S.; ...

    2016-04-06

    A superconducting transition temperature (T c ) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO 3 . The discovery ignited efforts to identify the mechanism for the markedly enhanced T c from its bulk value of 8 K. There are two main views about the origin of the T c enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO 3 .more » Without interfacial effects, the surface layer state has a moderate T c of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum T c , which in turn reveals the need for interfacial effects to achieve the highest T c in one monolayer FeSe on SrTiO 3 .« less

  4. Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method.

    PubMed

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan; Şimşek, Veli

    2016-07-01

    A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000-3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297-302, 2016. © 2015 Wiley Periodicals, Inc.

  5. Luminescent down-shifting layers with Eu2+ and Eu3+ doped strontium compound particles for photovoltaics

    NASA Astrophysics Data System (ADS)

    Solodovnyk, Anastasiia; Hollmann, Andre; Osvet, Andres; Forberich, Karen; Stern, Edda; Batentschuk, Miroslaw; Klupp Taylor, Robin; Brabec, Christoph J.

    2014-10-01

    In this contribution we discuss luminescent down-shifting (LDS) systems consisting of a polymer matrix filled with phosphor particles. It is an elegant approach to make a use of potentially destructive or otherwise wasted high energy photons and diminish charge carrier losses caused by thermalization in photovoltaics. Sub-micron and micron sized particles of strontium aluminate doped with Eu2+ and strontium carbonate doped with Eu3+ ions are chosen for the application due to their suitable absorption in UV spectral region. These particles exhibit strong luminescence in the visible range between 520 and 650 nm. The systems are carefully designed to meet critical optical requirements such as high transparency in the visible spectrum as well as sufficient absorption of UV light. They are coated on quartz glass substrates (20 x 20 x 1 mm) and can be easily laminated to different kinds of solar cells without any modification to well-established device fabrication processes. Optical characterization further confirms that particles of a few microns in size generate strong light scattering in layers due to the sizes slightly larger than visible light wavelengths. Dried thick layers of 20 to 100 μm are tested with CIGS and organic cells. The concept of light conversion is experimentally proven. However, optical losses cause a reduction in the overall performance of the tested devices. Possible ways to bring down the amount of light scattering and, thus, to increase optical transmission for the studied system are also addressed, and are a subject of future research.

  6. Double-Layer 3D Macro-Mesoporous Metal Oxide Modified Boron-Doped Diamond with Enhanced Photoelectrochemical Performance.

    PubMed

    Fan, Jiaqi; Shi, Huijie; Xiao, Hanshuang; Zhao, Guohua

    2016-04-22

    In this work, a TiO2/Sb-doped SnO2 electrode was prepared on the boron-doped diamond (BDD) substrate with double-layer three-dimensional macro-mesoporous (DL3DOM-m) structure, using the polystyrene sphere (PS) vertical deposition method. The as-prepared DL3DOM-m TiO2/SnO2/BDD was employed for organic contaminant removal, showing excellent photoelectrocatalytic performance. SEM, XRD and XPS indicated that DL3DOM-m electrode possessed a 3D macroporous layered framework with uniform pore size (about 400 nm), nanosized particles (4.5-5.8 nm), and high electroactive surface area (3-fold more than that of BDD). SA-XRD indicated the backbone of DL3DOM-m electrode had mesoporous structure. It was found that the as-prepared electrode exhibited remarkable electrocatalytic activity, high photocurrent and outstanding absorption capability (91.0 μg cm(-2)). Furthermore, bisphenol A (BPA) was completely decomposed after 3 h of reaction applying DL3DOM-m electrode as photoanode, and that on BDD was only 58.9%. It indicated that the modified electrode had great potential to be used in practical water treatment with high photoelectrochemical performance.

  7. Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Xiong, Tao; Wang, Fengxia; Qiao, Xianfeng; Ma, Dongge

    2008-06-01

    We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq3) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resulting in a large increase in luminance and efficiency. The maximum luminance, current efficiency, and power efficiency reach 21000cd/cm2, 6.5cd/A, and 3.5lm/W, respectively, which are 40%-50% higher in efficiency than that of IBOLEDs with cesium carbonate (Cs2CO3) doped Alq3 as the electron injection layer, where the efficiencies are only 4.5cd/A and 2.2lm/W. Our results indicate that CsOH doped Alq3 should be an effective electron injection layer on a wide range of electrodes to fabricate high performance OLEDs.

  8. Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375

    SciTech Connect

    Repins, I.

    2012-01-01

    This work has investigated the use of Na doped Mo (MONA) sputtering targets for use in preparing CIGS devices. The Mo:Na material is doped to about 3% Na by weight, implying that a 40 nm layer on top of the standard Mo contact contains sufficient Na to dope a 2.5 ..mu..m CIGS film. The ability to control Na doping independent of both CIGS processing conditions and adhesion is an important gain for industry and research. Manufacturers gain a route to increased manufacturability and performance, while NREL researchers gain a tightened performance distribution of devices and increased process flexibility. Our immediate partner in this work, the Climax Molybdenum Technology Center, gains validation of their product.

  9. Multi-scale analysis of the diffusion barrier layer of gadolinia-doped ceria in a solid oxide fuel cell operated in a stack for 3000 h

    NASA Astrophysics Data System (ADS)

    Morales, M.; Miguel-Pérez, V.; Tarancón, A.; Slodczyk, A.; Torrell, M.; Ballesteros, B.; Ouweltjes, J. P.; Bassat, J. M.; Montinaro, D.; Morata, A.

    2017-03-01

    The state-of-the-art materials for SOFCs are yttria-stabilized zirconia as electrolyte and lanthanum strontium cobalt ferrite as cathode. However, the formation of insulating phases between them requires the use of diffusion barriers, typically made of gadolinia doped ceria. The study of the stability of this layer during the fabrication and in operando is currently one of the major goals of the SOFC industry. In this work, the cation inter-diffusion at the cathode/barrier layer/electrolyte region is analysed for an anode-supported cell industrially fabricated by conventional techniques, assembled in a short-stack and tested under real operation conditions for 3000 h. A comprehensive study of this cell, and an equivalent non-operated one, is performed in order to understand the inter-diffusion mechanisms with possible effects on the final performance. The analyses evidence that the cation diffusion is occurring during the fabrication process. Despite the significant diffusion of Ce,Gd, Zr, Y and Sr cations, the formation of typically reported CGO-YSZ solid solution is not observed while the presence of isolated grains of SrZrO3 is proved. All in all, this study presents new insights into the stability of the typically employed diffusion barriers for solid oxide cells that will guide future strategies to improve their performance and durability.

  10. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  11. Equilibrium and kinetics studies on As(V) and Sb(V) removal by Fe2+ -doped Mg-Al layered double hydroxides.

    PubMed

    Kameda, Tomohito; Kondo, Eisuke; Yoshioka, Toshiaki

    2015-03-15

    Mg-Al layered double hydroxides (Mg-Al LDHs) doped with Fe(2+) adsorbed As(V) [Formula: see text] and Sb(V) [Formula: see text] from an aqueous solution through anion exchange with Cl(-) intercalated in the LDH interlayer. Fe(2+)-doped Mg-Al LDH exhibited superior As(V) removal compared with Mg-Al LDH. The oxidation of Fe(2+) doped in the Mg-Al LDH host layer to Fe(3+) increased the positive layer charge of the LDH, thus increasing the anion-uptake capacity owing to stronger electrostatic attractive force between the positively charged layer and the anion. However, Fe(2+)-doped Mg-Al LDH was not superior to Mg-Al LDH in terms of Sb(V) removal. This was attributed to the preferential intercalation of OH(-) over [Formula: see text] . The As(V) and Sb(V) removal by LDH followed Langmuir-type adsorption, which proceeded via a pseudo-first-order reaction. The equilibrium and kinetics studies confirm that the adsorption of As(V) and Sb(V) by Fe(2+)-doped Mg-Al LDH was the result of chemical adsorption, involving the anion exchange of [Formula: see text] and [Formula: see text] with the intercalated Cl(-).

  12. A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

    NASA Astrophysics Data System (ADS)

    Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

    2016-10-01

    Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

  13. Molecular Design of Doped Polymers for Thermoelectric Systems-Final Technical Report

    SciTech Connect

    Chabinyc, Michael L.; Hawker, Craig J.

    2013-10-09

    The self-assembly of organic semiconducting molecules and polymers is critical for their electrical properties. This project addressed the design of organic semiconductors with novel synthetic building blocks for proton-dopable conducting materials and the molecular order and microstructure of high performance semiconducting polymers blended with charge transfer dopants. Novel azulene donor-acceptor materials were designed and synthesized with unique electronic effects upon protonation to generate charged species in solution. The microstructure and optical properties of these derivatives were examined to develop structure-property relationships. Studies of the microstructure of blends of charge transfer doped semiconducting polymers revealed highly ordered conductive phases in blends. The molecular packing of one blend was studied in detail using a combination of solid-state NMR and x-ray scattering revealing that dopant incorporation is unlikely to be random as assumed in transport models. Studies of the electrical properties of these highly ordered blends revealed a universal trend between the thermopower and electrical conductivity of semiconducting polymers that is independent of the doping mechanism.

  14. Photophysical processes of triplet states and radical ions in pure and molecularly doped polymers. Final report

    SciTech Connect

    Burkhart, R.D.

    1998-01-01

    Both the past and current objectives are to learn how to control the rate and direction of triplet exciton migration in both pure and molecularly doped polymer systems. Since triplet excimers are efficient traps for migrating excitons, a secondary objective has been to characterize these excimers with a view toward their use as rate modifiers or excited state quenchers. Further objectives included those stated above as past and current objectives but with an additional goal. The authors learned that fluid solutions of many of the nitrogen containing chromophores with which they work produce both radical cations and anions upon excimer laser excitation. They also learned that a phosphorus analogue behaves similarly. At this time the mechanism of charge generation in these systems is not well established but they do know that the electronically excited states and radical ions can potentially interconvert. They wanted to find out whether or not the pure or molecularly doped polymer systems could be used in a step-wise sequence involving light absorption followed by charge generation. All of their activities are oriented toward the potential end use of polymeric systems in the conversion of light energy to perform various types of useful work.

  15. Final Closeout report for grant FG36-08GO18018, titled: Functional Multi-Layer Solution Processable Polymer Solar Cells

    SciTech Connect

    Adam J. Moule

    2012-05-01

    heterojunction layer is based upon the idea of balancing good and bad properties within a single film. This proposal addresses the idea that the use of multiple layers that have differing electrical and optical functions could lead to greater efficiency because fewer materials compromises must be made. This idea is not new, multiple functional layer have been successfully used in cross-linked OLED's and organic small molecule evaporated PV devices. The main reason that multiple layers of polymers are not commonly deposited is that most conjugated polymers are mutually soluble in the same solvents. The work outlined in the proposal was intended to develop a new deposition strategy that would allow multiple organic layers to be deposited from solution using spin coating. The deposition method that we proposed was successful, sometimes, but ultimately not reliable. Instead we focused on more reliable methods to implement doping along the interface between layers. This work has been very successful. We found that using PEDOT:PSS, the PSS would form a surface layer of {approx}2-3 nm thickness that would mix with and electrochemically react with P3HT upon heating. This mechanism is also a crosslinking reaction in that H{sub 2} is released and permanent new bonds are formed. Using the Plextronics Inc. replacement to PEDOT:PSS, for which there are no mobile dopants, we were able to show that a second and different mechanism can be used to p-type dope organic materials. We are currently working with Plextronics to develop a new product. Finally we produced n-type doping of a thin fullerene layer near the cathode also using a self-assembly method. Low work function metals will diffuse into the BHJ layer and dope the fullerene upon heating. This doping also affects the vertical segregation of BHJ materials in a predictable way. We accomplished all of the scientific goals that we set out in the proposal written in May 2007. Some of the methods we proposed were not fully successful, but we

  16. Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer

    NASA Astrophysics Data System (ADS)

    Chen, Fei; Lin, Qingli; Wang, Hongzhe; Wang, Lei; Zhang, Fengjuan; Du, Zuliang; Shen, Huaibin; Li, Lin Song

    2016-08-01

    In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT:PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in PEDOT:PSS, the optimal devices were obtained with ~22-nm-sized Au NP dopant at the concentration with an optical density (OD) of 0.21. Highly bright green QLEDs with a maximum external quantum efficiency (EQE) of 8.2 % and a current efficiency of 29.1 cd/A exhibit 80 % improvement compared with devices without Au NP dopants. The improved performance may be attributed to the significant increase in the hole injection rate as a result of the introduction of Au NPs and the good matching between the resonance frequency of the localized surface plasmon resonance (LSPR) generated by the Au NPs and the emission band of QD layer, as well as the suppressed Auger recombination of QD layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons. These results are helpful for fabricating high-performance QD-based applications, such as full-color displays and solid-state lighting.

  17. Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

    PubMed Central

    Gonnelli, R. S.; Paolucci, F.; Piatti, E.; Sharda, Kanudha; Sola, A.; Tortello, M.; Nair, Jijeesh R.; Gerbaldi, C.; Bruna, M.; Borini, S.

    2015-01-01

    The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8·1014 cm−2 has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T2 component – that can be associated with electron-electron scattering – and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly, this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy. PMID:25906088

  18. Improvement of organic solar cell efficiency by solution-processed doping of pentacene in PEDOT:PSS layer

    NASA Astrophysics Data System (ADS)

    Chilvery, A. K.; Batra, A. K.; Surabhi, R.; Lal, R. B.

    2014-12-01

    In the current research, organic solar cells (OSCs) with various concentrations of pentacene in Poly(ethylenedioxythiopene):Poly(styrenesulfonate) (PEDOT:PSS) interface layer were investigated for better hole extraction. The ITO/Pentacene + PEDOT:PSS/P3HT:PCBM/Al-fabricated solar cell fabricated via brush coating provides superior photovoltaic, electrical and optical characteristics when compared with the ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell. The ITO/Pentacene + PEDOT:PSS/P3HT:PCBM/Al solar cells deliver a VOC ~350 mV and 2.57% efficiency. It is observed that the optimized concentration of pentacene doping in PEDOT:PSS layer, along with an active layer of P3HT and PC60BM, doubles the efficiency of the device, when compared with pristine PEDOT:PSS layer. The degradation studies of the fabricated bulk heterojunction OSCs reveal that the degrading abilities of ITO/Pentacene + PEDOT:PSS/P3HT:PCBM/Al solar cells are 60% more better than those of ITO/PEDOT:PSS/P3HT:PCBM/Al devices. Thus, this work will ultimately contribute toward fully solution processed painted device, which will provide low-cost manufacturing and improved stability of pentacene-based organic photovoltaics.

  19. Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer

    NASA Astrophysics Data System (ADS)

    Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

    2017-04-01

    Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

  20. Structural transformation and photoluminescence behavior during calcination of the layered europium-doped yttrium hydroxide intercalate with organic-sensitizer

    SciTech Connect

    Sun, Yahong; Pan, Guohua; Gu, Qingyang; Li, Xinxin; Sun, Genban; Ma, Shulan; Yang, Xiaojing

    2013-11-15

    Graphical abstract: Calcination of organic sensitizer intercalated layered europium-doped yttrium hydroxide displayed tunable luminescent performance dependent on calcined temperatures. The 200 °C-calcined sample revealed an optimal fluorescence behavior with respect to TA-LYH:Eu composite and the as-transformed oxide. - Highlights: • We report the calcinations process of organic/LYH:Eu nanocomposite materials. • We study structural transformation and fluorescence behavior of the calcined samples. • Calcined samples displayed tunable luminescent performance dependent on temperatures. • The optimal fluorescence was found in 200 °C-calcined sample. • This material can provide valuable guide for developing tunable luminescent materials. - Abstract: We report, for the first time, structural transformation and photoluminescence behavior by calcination of layered europium-doped yttrium hydroxide (LYH:Eu) intercalate with organic sensitizer terephthalate (TA). The calcined samples displayed tunable luminescent performance dependent on calcined temperatures. Calcination under low temperatures (200 and 300 °C) retained layered structure, while high temperatures (>400 °C) yielded oxide phase. The optimal fluorescence occurred in 200 °C-calcination, possibly resulting from an optimal arrangement of TA. Above 200 °C, the luminescence intensity was first weakened and then enhanced, due to gradual departure of TA and following occurrence of oxide phase. The energy transfer presented an intrinsic transition from TA-to-Eu{sup 3+} in the organic intercalate to O{sup 2−}-to-Eu{sup 3+} charge transfer in as-transformed oxide. The predominant luminescence property of the hybrid material can provide valuable guide for developing tunable luminescent materials, especially flexible materials resulting from the containing organic component.

  1. First-principles investigation of Mn δ-layer doped GaN/AlN/GaN (0001) tunneling junctions

    NASA Astrophysics Data System (ADS)

    Cui, X. Y.; Delley, B.; Freeman, A. J.; Stampfl, C.

    2009-08-01

    Highly spin polarized diluted ferromagnetic semiconductors are expected to be widely used as electrodes in spintronic devices. Based on density functional theory calculations, we investigate the feasibility of using Mn-doped wurtzite GaN/AlN/GaN(0001) trilayer junctions for tunnel magnetoresistance (TMR) devices. We address some key issues affecting the degree of spin polarization and spin tunneling transport with the aim of realizing the appealing half-metallicity and large TMR ratio. We propose digital δ-Mn layer doping in GaN, close to the GaN/AlN interfaces for enhanced performance. Layer-resolved band structure and density of states calculations reveal that Mn dopants produce local metallic or half-metallic states surrounded by the host semiconductor materials. Spin polarized electrons can transport across the interfaces, free of the conductivity mismatch problem owing to the strong hybridization between Mn 3d states and the states of surrounding host atoms. The calculated TMR ratio is found to depend sensitively on the dopant concentration. Half-metallicity and large TMR ratios are predicted for "low" dopant concentrations (1/2 and 1/4 monolayers), while a high concentration (1 monolayer) produces metallic states and thus a decreased TMR ratio. Very thin AlN barrier layers are predicted to yield low TMR ratios. We also study the role of two types of structural defects close to the Mn atoms at the interfaces, namely, atomic mixing (Al replaces Ga and vice versa), and N and Ga vacancies. While the studied atomic interdiffusion defects have little effect on the TMR ratio, both N and Ga vacancies are found to destroy the half-metallicity and lead to a substantial reduction of the TMR ratio, and thus should be eliminated for enhanced device performance.

  2. Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures

    SciTech Connect

    Chel'nyi, A A; Aluev, A V; Maslov, S V

    2004-01-31

    The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

  3. Doping Induced Electronic Phase Separation and Coulomb Bubbles in Layered Superconductors

    NASA Astrophysics Data System (ADS)

    Saarela, M.; Kusmartsev, F. V.

    2010-12-01

    We study properties of charge fluids with random impurities or heavy polarons using a microscopic Hamiltonian with the full many-body Coulomb interaction. At zero temperature and high enough density the bosonic fluid is superconducting, but when density decreases the Coulomb interaction will be strongly over-screened and impurities or polarons begin to trap charge carriers forming bound quasiparticle like clusters, which we call Coulomb bubbles or clumps. These bubbles are embedded inside the superconductor and form nuclei of a new insulating state. The growth of a bubble is terminated by the Coulomb force. The fluid contains two groups of charge carriers associated with free and localized states. The insulating state arises via a percolation of the insulating islands of bubbles, which cluster and prevent the flow of the electrical supercurrent through the system. Our results are applicable to HTSC. There the Coulomb fluids discussed in the paper correspond to mobile holes located on Cu sites and heavy polarons or charged impurities located on Oxygen sites. As a result of our calculations the following two-componet picture of two competing orders in cuprates arise. The mobile and localized states are competing with each other and their balance is controlled by doping. At high doping a large Fermi surface is open. There the density of real charge carriers is significantly larger than the density of the doped ones. When doping decreases more and more carriers are localized as Coulomb clumps which are creating around heavy polarons localized on Oxygen sites and forming a regular lattice. The picture is consistent with the Gorkov and Teitelbaum (GT) analysis 1,2 of the transport, Hall effect data and the ARPES spectra as well as with nanoscale superstructures observed in Scanning Tunneling Microscope(STM) experiments [3-8]. The scenario of the clump formation may be also applicable to pnictides, where two types of clumps may arise even at very high temperatures.

  4. Doping Induced Electronic Phase Separation and Coulomb Bubbles in Layered Superconductors

    NASA Astrophysics Data System (ADS)

    Saarela, M.; Kusmartsev, F. V.

    We study properties of charge fluids with random impurities or heavy polarons using a microscopic Hamiltonian with the full many-body Coulomb interaction. At zero temperature and high enough density the bosonic fluid is superconducting, but when density decreases the Coulomb interaction will be strongly over-screened and impurities or polarons begin to trap charge carriers forming bound quasiparticle like clusters, which we call Coulomb bubbles or clumps. These bubbles are embedded inside the superconductor and form nuclei of a new insulating state. The growth of a bubble is terminated by the Coulomb force. The fluid contains two groups of charge carriers associated with free and localized states. The insulating state arises via a percolation of the insulating islands of bubbles, which cluster and prevent the flow of the electrical supercurrent through the system. Our results are applicable to HTSC. There the Coulomb fluids discussed in the paper correspond to mobile holes located on Cu sites and heavy polarons or charged impurities located on Oxygen sites. As a result of our calculations the following two-componet picture of two competing orders in cuprates arise. The mobile and localized states are competing with each other and their balance is controlled by doping. At high doping a large Fermi surface is open. There the density of real charge carriers is significantly larger than the density of the doped ones. When doping decreases more and more carriers are localized as Coulomb clumps which are creating around heavy polarons localized on Oxygen sites and forming a regular lattice. The picture is consistent with the Gorkov and Teitelbaum (GT) analysis 1,2 of the transport, Hall effect data and the ARPES spectra as well as with nanoscale superstructures observed in Scanning Tunneling Microscope(STM) experiments [3-8]. The scenario of the clump formation may be also applicable to pnictides, where two types of clumps may arise even at very high temperatures.

  5. Room temperature performance of 4 V aqueous hybrid supercapacitor using multi-layered lithium-doped carbon negative electrode

    NASA Astrophysics Data System (ADS)

    Makino, Sho; Yamamoto, Rie; Sugimoto, Shigeyuki; Sugimoto, Wataru

    2016-09-01

    Water-stable multi-layered lithium-doped carbon (LixC6) negative electrode using poly(ethylene oxide) (PEO)-lithium bis(trifluoromethansulfonyl)imide (LiTFSI) polymer electrolyte containing N-methyl-N-propylpiperidinium bis(trifluoromethansulfonyl)imide (PP13TFSI) ionic liquid was developed. Electrochemical properties at 60 °C of the aqueous hybrid supercapacitor using activated carbon positive electrode and a multi-layered LixC6 negative electrode (LixC6 | PEO-LiTFSI | LTAP) without PP13TFSI exhibited performance similar to that using Li anode (Li | PEO-LiTFSI | LTAP). A drastic decrease in ESR was achieved by the addition of PP13TFSI to PEO-LiTFSI, allowing room temperature operation. The ESR of the multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI at 25 °C was 801 Ω cm2, which is 1/6 the value of the multi-layered Li negative electrode with PEO-LiTFSI (5014 Ω cm2). Charge/discharge test of the aqueous hybrid supercapacitor using multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI at 25 °C afforded specific capacity of 20.6 mAh (g-activated carbon)-1 with a working voltage of 2.7-3.7 V, and good long-term capability up to 3000 cycles. Furthermore, an aqueous hybrid supercapacitor consisting of a high capacitance RuO2 nanosheet positive electrode and multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI showed specific capacity of 196 mAh (g-RuO2)-1 and specific energy of 625 Wh (kg-RuO2)-1 in 2.0 M acetic acid-lithium acetate buffered solution at 25 °C.

  6. Phosphorus-Doped Graphene Oxide Layer as a Highly Efficient Flame Retardant.

    PubMed

    Some, Surajit; Shackery, Iman; Kim, Sun Jun; Jun, Seong Chan

    2015-10-26

    A simple and easy process has been developed to efficiently dope phosphorus into a graphene oxide surface. Phosphorus-doped graphene oxide (PGO) is prepared by the treatment of polyphosphoric acid with phosphoric acid followed by addition of a graphene oxide solution while maintaining a pH of around 5 by addition of NaOH solution. The resulting materials are characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Raman spectroscopy, thermogravimetric analysis (TGA), and scanning electron microscopy (SEM). The as-made PGO solution-coated cloth exhibits excellent flame retardation properties. The PGO-coated cloth emits some smoke at the beginning without catching fire for more than 120 s and maintains its initial shape with little shrinkage. In contrast, the pristine cloth catches fire within 5 s and is completely burned within 25 s, leaving trace amounts of black residue. The simple technique of direct introduction of phosphorus into the graphene oxide surface to produce phosphorus-doped oxidized carbon nanoplatelets may be a general approach towards the low-cost mass production of PGO for many practical applications, including flame retardation.

  7. Effect of Sr doping in layered Eu3Bi2S4F4 superconductor

    NASA Astrophysics Data System (ADS)

    Zhang, Pan; Zhai, Hui-Fei; Wang, Zhen; Chen, Jian; Feng, Chun-Mu; Cao, Guang-Han; Xu, Zhu-An

    2017-01-01

    We report the effect of Sr-doping in the BiS2-based superconductor {{Eu}}3-xSr x Bi2S4F4. Eu3Bi2S4F4 is a self-doped compound with a mixed Eu valence state. By the partial substitution of Sr for Eu, T c gradually decreases and superconductivity disappears above 0.3 K when x\\gt 1.0. Magnetic-susceptibility and specific-heat measurements reveal that Sr substitution leads to a decrease in both Eu2+ and Eu3+ populations. The decreased Eu3+ population, and the corresponding lower charge carrier density, may be the main origin for the suppression of superconductivity. In addition, we find a significant increase in the Sommerfeld coefficient {γ }0 upon Sr doping, which may be due to the Kondo effect between the magnetic moments (associated to Eu2+ ions) and the conducting electrons. This work implies that the Kondo effect could compete with superconductivity in Eu3Bi2S4F4.

  8. W-doped TiO2 mesoporous electron transport layer for efficient hole transport material free perovskite solar cells employing carbon counter electrodes

    NASA Astrophysics Data System (ADS)

    Xiao, Yuqing; Cheng, Nian; Kondamareddy, Kiran Kumar; Wang, Changlei; Liu, Pei; Guo, Shishang; Zhao, Xing-Zhong

    2017-02-01

    Doping of TiO2 by metal elements for the scaffold layer of the perovskite solar cells has been proved to be one of the effective methods to improve the power conversion efficiency. In the present work, we report the impact of doping of TiO2 nanoparticles with different amounts of tungsten (W) on the photovoltaic properties of hole transport material free perovskite solar cells (PSCs) that employ carbon counter electrode. Light doping with W (less than 1000 ppm) improves the power conversion efficiencies (PCEs) of solar cells by promoting the electron conductivity in the TiO2 layer which facilitates electron transfer and collection. With the incorporation of W, average efficiency of PSCs is increased from 9.1% for the un-doped samples to 10.53% for the 1000 ppm W-doped samples, mainly originates from the increase of short circuit current density and fill factor. Our champion cell exhibits an impressive PCE of 12.06% when using the 1000 ppm W-doped TiO2 films.

  9. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    NASA Astrophysics Data System (ADS)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  10. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    NASA Astrophysics Data System (ADS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al3+ films. The electrochromic performance of the films were evaluated by means of UV-vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film.

  11. Macroscale cobalt-MOFs derived metallic Co nanoparticles embedded in N-doped porous carbon layers as efficient oxygen electrocatalysts

    NASA Astrophysics Data System (ADS)

    Lu, Hai-Sheng; Zhang, Haimin; Liu, Rongrong; Zhang, Xian; Zhao, Huijun; Wang, Guozhong

    2017-01-01

    Metal-organic frameworks (MOFs) materials have aroused great research interest in different areas owing to their unique properties, such as high surface area, various composition, well-organized framework and controllable porous structure. Controllable fabrication of MOFs materials at macro-scale may be more promising for their large-scale practical applications. Here we report the synthesis of macro-scale Co-MOFs crystals using 1,3,5-benzenetricarboxylic acid (H3BTC) linker in the presence of Co2+, triethylamine (TEA) and nonanoic acid by a facile solvothermal reaction. Further, the as-fabricated Co-MOFs as precursor was pyrolytically treated at different temperatures in N2 atmosphere to obtain metallic Co nanoparticles embedded in N-doped porous carbon layers (denoted as Co@NPC). The results demonstrate that the Co-MOFs derived sample obtained at 900 °C (Co@NPC-900) shows a porous structure (including micropore and mesopore) with a surface area of 110.8 m2 g-1 and an N doping level of 1.62 at.% resulted from TEA in the pyrolysis process. As electrocatalyst, the Co@NPC-900 exhibits bifunctional electrocatalytic activities toward the oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) in alkaline media which are key reactions in some renewable energy technologies such as fuel cells and rechargeable metal-air batteries. The results indicate that the Co@NPC-900 can afford an onset potential of 1.50 V (vs. RHE) and a potential value of 1.61 V (vs. RHE) at a current density of 10 mA cm-2 for ORR and OER with high applicable stability, respectively. The efficient catalytic activity of Co@NPC-900 as bifunctional oxygen electrocatalyst can be ascribed to N doping and embedded metallic Co nanoparticles in carbon structure providing catalytic active sites and porous structure favourable for electrocatalysis-related mass transport.

  12. The psychology of doping.

    PubMed

    Elbe, Anne-Marie; Barkoukis, Vassilis

    2017-08-01

    Doping is increasingly becoming a problem in both elite and recreational sports. It is therefore important to understand the psychological factors which can explain doping behavior in order to prevent it. The present paper briefly presents evidence on the prevalence of doping use in competitive sports and the measurement approaches to assess doping behavior and doping-related variables. Furthermore, the integrative theoretical approaches used to describe the psychological processes underlying doping use are discussed. Finally, the paper provides suggestions for appropriate measurement of doping behavior and doping-related variables, key preventive efforts against doping as well as avenues for future research. Copyright © 2017 Elsevier Ltd. All rights reserved.

  13. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  14. Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tanno, Hiroki; Sakuraba, Masao; Tillack, Bernd; Murota, Junichi

    2008-07-01

    Electrical characteristics of B atomic-layer doped Si epitaxial films on Si(1 0 0) formed by B atomic-layer formation on Si(1 0 0) at 180 °C and subsequent capping Si deposition at 500 °C using ultraclean low-pressure chemical vapor deposition were investigated. From evaluation results of carrier concentration in the films, by low-temperature SiH 4 exposure at 180-300 °C before the capping Si deposition at 500 °C, 70% improvement of B electrical activity was confirmed, and it is suggested that lowering the temperatures for B atomic-layer formation on Si(1 0 0) as well as SiH 4 exposure before the capping Si deposition is effective to suppress B clustering and to achieve B atomic-layer doped Si films with extremely high carrier concentration.

  15. Electrical and optical properties of Hg/sub 1-x/Cd/sub x/Te doped layers grown by Liquid Phase Epitaxy (LPE)

    NASA Astrophysics Data System (ADS)

    Sarusi, Gabby

    1987-05-01

    Liquid Phase Epitaxy (LPE) layers were doped during growth. The growth method was horizontal sliding in semiclosed hydrogen atmosphere. The dopants were copper for p-type layers and gallium for n-type layers.The Two Carrier Model was employed to analyse the results. By this analysis, hole concentration and mobility and electron concentration and mobility were obtained. The transmission infrared spectrum of these layers was examined in the range of 2 to 25 microns. It was demonstrated that the control of the type and carrier concentration can be achieved by doping during growth. Possible application of this work is the ability of production of p-n heterojunctions during growth. The effect of shift in lambdaco to short wavelengths by Burstein Shift can be used as intrinsic infra-red windows. The strong dependence of reflection on wavelengths and carrier concentration demonstrated in this work, can be used in development of infrared waveguides.

  16. Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

    NASA Astrophysics Data System (ADS)

    Kellogg, Isaiah D.; Koylu, Umit O.; Dogan, Fatih

    Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration.

  17. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  18. Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

    SciTech Connect

    Netzel, Carsten; Jeschke, Jörg; Brunner, Frank; Knauer, Arne; Weyers, Markus

    2016-09-07

    We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semiconductor surface states and the surface recombination by the incident light. The temporal behavior of the photoluminescence intensity varies with the parameters such as ambient atmosphere, pretreatment of the surface, doping density, threading dislocation density, excitation power density, and sample temperature. By means of temperature-dependent photoluminescence measurements, we observed that at least two different processes at the semiconductor surface affect the non-radiative surface recombination during illumination. The first process leads to an irreversible decrease in photoluminescence intensity and is dominant around room temperature, and the second process leads to a delayed increase in intensity and becomes dominant around T = 150–200 K. Both processes become slower when the sample temperature decreases from room temperature. They cease for T < 150 K. Stable photoluminescence intensity at arbitrary sample temperature was obtained by passivating the analyzed layer with an epitaxially grown AlN cap layer.

  19. p-wave triggered superconductivity in single-layer graphene on an electron-doped oxide superconductor

    NASA Astrophysics Data System (ADS)

    di Bernardo, A.; Millo, O.; Barbone, M.; Alpern, H.; Kalcheim, Y.; Sassi, U.; Ott, A. K.; de Fazio, D.; Yoon, D.; Amado, M.; Ferrari, A. C.; Linder, J.; Robinson, J. W. A.

    2017-01-01

    Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity was predicted in single-layer graphene (SLG), with the electrons pairing with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing SLG on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in SLG. The realization of unconventional superconductivity in SLG offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.

  20. Photovoltaic response in pristine WSe{sub 2} layers modulated by metal-induced surface-charge-transfer doping

    SciTech Connect

    Wi, Sungjin; Chen, Mikai; Li, Da; Nam, Hongsuk; Meyhofer, Edgar; Liang, Xiaogan

    2015-08-10

    We obtained photovoltaic response in pristine multilayer WSe{sub 2} by sandwiching WSe{sub 2} between top and bottom metals. In this structure, the work-function difference between the top metal and WSe{sub 2} plays a critical role in generating built-in potentials and photovoltaic responses. Our devices with Zn as top metal exhibit photo-conversion efficiencies up to 6.7% under 532 nm illumination and external quantum efficiencies in the range of 40%–83% for visible light. This work provides a method for generating photovoltaic responses in layered semiconductors without detrimental doping or exquisite heterostructures, and also advances the physics for modulating the band structures of such emerging semiconductors.

  1. p-wave triggered superconductivity in single-layer graphene on an electron-doped oxide superconductor

    PubMed Central

    Di Bernardo, A.; Millo, O.; Barbone, M.; Alpern, H.; Kalcheim, Y.; Sassi, U.; Ott, A. K.; De Fazio, D.; Yoon, D.; Amado, M.; Ferrari, A. C.; Linder, J.; Robinson, J. W. A.

    2017-01-01

    Electron pairing in the vast majority of superconductors follows the Bardeen–Cooper–Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity was predicted in single-layer graphene (SLG), with the electrons pairing with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing SLG on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in SLG. The realization of unconventional superconductivity in SLG offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K. PMID:28102222

  2. Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer

    PubMed Central

    Kim, Jeongmo; Mat Teridi, Mohd Asri; Mohd Yusoff, Abd. Rashid bin; Jang, Jin

    2016-01-01

    Perovskite solar cells are becoming one of the leading technologies to reduce our dependency on traditional power sources. However, the frequently used component poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has several shortcomings, such as an easily corroded indium-tin-oxide (ITO) interface at elevated temperatures and induced electrical inhomogeneity. Herein, we propose solution-processed nitrogen-doped graphene oxide nanoribbons (NGONRs) as a hole transport layer (HTL) in perovskite solar cells, replacing the conducting polymer PEDOT:PSS. The conversion efficiency of NGONR-based perovskite solar cells has outperformed a control device constructed using PEDOT:PSS. Moreover, our proposed NGONR-based devices also demonstrate a negligible current hysteresis along with improved stability. This work provides an effective route for substituting PEDOT:PSS as the effective HTL. PMID:27277388

  3. p-wave triggered superconductivity in single-layer graphene on an electron-doped oxide superconductor.

    PubMed

    Di Bernardo, A; Millo, O; Barbone, M; Alpern, H; Kalcheim, Y; Sassi, U; Ott, A K; De Fazio, D; Yoon, D; Amado, M; Ferrari, A C; Linder, J; Robinson, J W A

    2017-01-19

    Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity was predicted in single-layer graphene (SLG), with the electrons pairing with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing SLG on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in SLG. The realization of unconventional superconductivity in SLG offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.

  4. Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

    NASA Astrophysics Data System (ADS)

    Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2016-12-01

    The electron mobility in depletion-mode lateral β-Ga2O3(010) metal-oxide-semiconductor field-effect transistors (MOSFETs) with an n-channel formed by Si-ion (Si+) implantation doping was extracted using low-field electrical measurements on FET structures. An undoped Ga2O3 buffer layer protected the channel against charge compensation by suppressing outdiffusion of deep Fe acceptors from the semi-insulating substrate. The molecular beam epitaxy growth temperature was identified as a key process parameter for eliminating parasitic conduction at the buffer/substrate growth interface. Devices with a resistive buffer showed room temperature channel mobilities of 90-100 cm2 V-1 s-1 at carrier concentrations of low- to mid-1017 cm-3, with small in-plane mobility anisotropy of 10-15% ascribable to anisotropic carrier scattering.

  5. Nitrogen and vanadium Co-doped TiO2 mesosponge layers for enhancement in visible photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Zhong, Jiasong; Xu, Jinrong; Wang, Qingyao

    2014-10-01

    Novel N and V co-doped TiO2 mesosponge (N-V-TMSW) layers were successfully prepared by one-step hydrothermal treatment of TiO2 nanotube arrays, and the phase composition, morphology and optical property were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and UV-vis diffusion reflectance spectroscopy (DRS). The crystal structure and density of states were studied by means of the first-principle pseudo-potential plane wave. The results indicated that titanium ions and oxygen atoms in TiO2 were successfully substituted by vanadium ions and nitrogen atoms, respectively. The sample N-V0.1-TMSW showed a remarkable absorption in the visible light range of 400-600 nm and high visible photocatalytic activity

  6. Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer.

    PubMed

    Kim, Jeongmo; Mat Teridi, Mohd Asri; Mohd Yusoff, Abd Rashid Bin; Jang, Jin

    2016-06-09

    Perovskite solar cells are becoming one of the leading technologies to reduce our dependency on traditional power sources. However, the frequently used component poly(3,4-ethylenedioxythiophene) polystyrene sulfonate ( PSS) has several shortcomings, such as an easily corroded indium-tin-oxide (ITO) interface at elevated temperatures and induced electrical inhomogeneity. Herein, we propose solution-processed nitrogen-doped graphene oxide nanoribbons (NGONRs) as a hole transport layer (HTL) in perovskite solar cells, replacing the conducting polymer PSS. The conversion efficiency of NGONR-based perovskite solar cells has outperformed a control device constructed using PSS. Moreover, our proposed NGONR-based devices also demonstrate a negligible current hysteresis along with improved stability. This work provides an effective route for substituting PSS as the effective HTL.

  7. Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer

    NASA Astrophysics Data System (ADS)

    Kim, Jeongmo; Mat Teridi, Mohd Asri; Mohd Yusoff, Abd. Rashid Bin; Jang, Jin

    2016-06-01

    Perovskite solar cells are becoming one of the leading technologies to reduce our dependency on traditional power sources. However, the frequently used component poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has several shortcomings, such as an easily corroded indium-tin-oxide (ITO) interface at elevated temperatures and induced electrical inhomogeneity. Herein, we propose solution-processed nitrogen-doped graphene oxide nanoribbons (NGONRs) as a hole transport layer (HTL) in perovskite solar cells, replacing the conducting polymer PEDOT:PSS. The conversion efficiency of NGONR-based perovskite solar cells has outperformed a control device constructed using PEDOT:PSS. Moreover, our proposed NGONR-based devices also demonstrate a negligible current hysteresis along with improved stability. This work provides an effective route for substituting PEDOT:PSS as the effective HTL.

  8. Effectiveness of compacted soil liner as a gas barrier layer in the landfill final cover system.

    PubMed

    Moon, Seheum; Nam, Kyoungphile; Kim, Jae Young; Hwan, Shim Kyu; Chung, Moonkyung

    2008-01-01

    A compacted soil liner (CSL) has been widely used as a single barrier layer or a part of composite barrier layer in the landfill final cover system to prevent water infiltration into solid wastes for its acceptable hydraulic permeability. This study was conducted to test whether the CSL was also effective in prohibiting landfill gas emissions. For this purpose, three different compaction methods (i.e., reduced, standard, and modified Proctor methods) were used to prepare the soil specimens, with nitrogen as gas, and with water and heptane as liquid permeants. Measured gas permeability ranged from 2.03 x 10(-10) to 4.96 x 10(-9) cm(2), which was a magnitude of two or three orders greater than hydraulic permeability (9.60 x 10(-13) to 1.05 x 10(-11) cm(2)). The difference between gas and hydraulic permeabilities can be explained by gas slippage, which makes gas more permeable, and by soil-water interaction, which impedes water flow and then makes water less permeable. This explanation was also supported by the result that a liquid permeability measured with heptane as a non-polar liquid was similar to the intrinsic gas permeability. The data demonstrate that hydraulic requirement for the CSL is not enough to control the gas emissions from a landfill.

  9. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-11-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  10. Constructing 2D porous graphitic C3 N4 nanosheets/nitrogen-doped graphene/layered MoS2 ternary nanojunction with enhanced photoelectrochemical activity.

    PubMed

    Hou, Yang; Wen, Zhenhai; Cui, Shumao; Guo, Xiaoru; Chen, Junhong

    2013-11-20

    A 2D porous graphitic C3 N4 nanosheets/nitrogen-doped graphene/layered MoS2 ternary nanojunction is synthesized using a simple pyrolysis process followed by a hydrothermal treatment. The 2D ternary nanojunction exhibits significantly enhanced photoelectrochemical and photocatalytic activities due to the large contact area, efficient light absorption, and rapid charge separation and transport.

  11. A FeCl₂-graphite sandwich composite with Cl doping in graphite layers: a new anode material for high-performance Li-ion batteries.

    PubMed

    Wang, Lili; Guo, Cong; Zhu, Yongchun; Zhou, Jianbin; Fan, Long; Qian, Yitai

    2014-11-06

    A composite with FeCl₂ nanocrystals sandwiched between Cl-doped graphite layers has been created via a space-confined nanoreactor strategy. This composite can be used as a new type of anode material for Li-ion batteries, which exhibit high reversible capacity and superior rate capability with excellent cycle life.

  12. Structural and electrical properties of Nb doped TiO{sub 2} films prepared by the sol–gel layer-by-layer technique

    SciTech Connect

    Duta, M.; Simeonov, S.; Teodorescu, V.; Predoana, L.; Preda, S.; Nicolescu, M.; Marin, A.; Spasov, D.; Gartner, M.; Zaharescu, M.; Szekeres, A.

    2016-02-15

    Highlights: • TiO{sub 2}:Nb (1.2 at.%) multilayer films were deposited by sol–gel method on glass and Si. • 5 and 10 layers TiO{sub 2}:Nb films crystallize only in the anatase phase. • E{sub g} values are within 3.24–3.32 eV showing a decrease with increasing the layer number. • The specific resistivity, effective donor and sheet energy densities were obtained. • Nb donor compensation by acceptor levels in TiO{sub 2}:Nb film was suggested. - Abstract: Thin films of 5 and 10-layered sol–gel TiO{sub 2} were doped with 1.2 at.% Nb and their structural, optical and electrical properties were investigated. The films crystallized only in anatase phase, as evidenced by X-ray diffraction and selected area electron diffraction analyses. High resolution transmission electron microscopy revealed nanosized crystallites with amorphous boundaries. Current-voltage measurements on metal-TiO{sub 2}–Si structures showed the formation of n{sup +}–n heterojunction at the TiO{sub 2}–Si interface with a rectification ratio of 10{sup 4}. The effective donor density varies between 10{sup 16} and 10{sup 17} cm{sup −3}, depending on film thickness. The sheet energy densities under forward and reverse bias are in the order of 10{sup 12} and 10{sup 10} cm{sup −2} eV{sup −1}, respectively. These values and the high specific resistivity (10{sup 4} Ω cm) support the existence of compensating acceptor levels in these films. It was established that the conduction mechanism is based on space charge limited current via deep levels with different energy positions in the band gap.

  13. A nitrogen doped TiO2 layer on Ti metal for the enhanced formation of apatite.

    PubMed

    Hashimoto, Masami; Kashiwagi, Kazumi; Kitaoka, Satoshi

    2011-09-01

    Biomedical titanium metals subjected to gas under precisely regulated oxygen partial pressures (P(O2)) from 10(-18) to 10(5) Pa at 973 K for 1 h were soaked in a simulated body fluid (SBF), whose ion concentrations were nearly equal to those of human blood plasma, at 36.5°C for up to 7 days. The effect of oxygen partial pressures on apatite formation was assessed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) measurements. After heating, the weight of the oxide layer (mainly TiO(2)) formed on the titanium metal was found to increase with increased oxygen partial pressure. Nitrogen (N)-doped TiO(2) (Interstitial N) was formed under a P(O2) of 10(-14) Pa. At lower P(O2) (10(-18) Pa), only a titanium nitride layer (TiN and Ti(2)N) was formed. After soaking in SBF, apatite was detected on heat-treated titanium metal samples. The most apatite was formed, based on the growth rate calculated from the apatite coverage ratio, on the titanium metal heated under a P(O2) of 10(-14) Pa, followed by the sample heated under a P(O2) of 10 and 10(4) Pa (in N(2)). The titanium metal heated under a P(O2) of 10(5) Pa (in O(2)) experienced far less apatite formation than the former three titanium samples. Similarly, very little weight change was observed for the titanium metal heated under a P(O2) of 10(-18) Pa (in N(2)). During the experimental observation period (5 days, 36.5°C, SBF), the following relationship held: The growth rate of apatite decreased in the order P(O2) of 10(-14) Pa > P(O2) of 10 Pa ≥ P(O2) of 10(4) Pa > P(O2) of 10(5) Pa > > P(O2) of 10(-18) Pa. These results suggest that N-doped TiO(2) (Interstitial N) strongly induces apatite formation but samples coated only with titanium nitride do not. Thus, controlling the formation of N-doped TiO(2) is expected to improve the bioactivity of biomedical titanium metal.

  14. Estimation on the self recovery behavior of low-conductivity layer in landfill final cover by laboratory conductivity tests.

    PubMed

    Kwon, O; Park, J

    2006-11-01

    This study examined the application of a Self Recovering Sustainable Layer (SRSL) as a landfill final cover. Low-conductivity layers in landfill covers are known to have problems associated with cracking as a result of the differential settlement or climatic changes. A SRSL is defined as a layer with chemical properties that reduces the increased hydraulic conductivity resulting from cracking by forming low-conductivity precipitates of chemicals contained in the layer. In this study, the formation of precipitates was confirmed using a batch test, spectroscopic analysis and mineralogical speciation tests. The possibility of secondary contamination due to the chemicals used for recovery was evaluated using a leaching test. A laboratory conductivity test was performed on a single layer composed of each chemical as well as on a 2-layer system. The recovery performance of the SRSL was estimated by developing artificial cracks in the specimens and observing the change in hydraulic conductivity as a function of time. In the laboratory conductivity test, the hydraulic conductivity of a 2-layer system as well as those of the individual layers that comprise the 2-layer system was estimated. In addition sodium ash was found to enhance the reduction in conductivity. A significant increase in conductivity was observed after the cracks developed but this was reduced with time, which indicated that the SRSL has a proper recovering performance. In conclusion, a SRSL can be used as a landfill final cover that could maintain low-conductivity even after the serious damages due to settlement.

  15. Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer

    PubMed Central

    Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

    2017-01-01

    Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices. PMID:28401912

  16. Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

    PubMed

    Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

    2017-04-12

    Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

  17. Quantum-interference transport through surface layers of indium-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Chiu, Shao-Pin; Lu, Jia Grace; Lin, Juhn-Jong

    2013-06-01

    We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out four-probe electrical-transport measurements on two individual NWs with geometric diameters of ≈70 and ≈90 nm in a wide temperature T interval of 1-70 K. The NWs reveal overall charge conduction behavior characteristic of disordered metals. In addition to the T dependence of resistance R, we have measured the magnetoresistance (MR) in magnetic fields applied either perpendicular or parallel to the NW axis. Our R(T) and MR data in different T intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a ‘core-shell-like structure’ in individual IZO NWs, where an outer shell of thickness t (≃15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length Lφ gradually decreases with increasing T from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where Lφ approximately equals d, an effective NW diameter which is slightly smaller than the geometric diameter. As T further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where Lφ approximately equals t (doped ZnO NWs. This work also strongly

  18. Studies on optical, structural and electrical properties of atomic layer deposited Al-doped ZnO thin films with various Al concentrations and deposition temperatures

    NASA Astrophysics Data System (ADS)

    Maeng, W. J.; Lee, Jae-won; Lee, Ju Ho; Chung, Kwun-Bum; Park, Jin-Seong

    2011-11-01

    We investigated transparent conducting aluminium-doped zinc oxide thin films fabricated by atomic layer deposition (ALD). For the thermal ALD, diethylzinc and trimethylaluminium were used as the Zn and Al precursors, respectively. The electrical, structural and optical properties were systematically investigated as functions of the Al doping contents and deposition temperature. The best resistivity and transmittance (4.2 mΩ cm and ~85%) were observed at an Al doping concentration of about 2.5 at% at 250 °C. An increase in the carrier concentration was observed with increasing deposition temperature and doping concentration. This can be explained by the effective field model of layered structures. Also, the enhancement of the mobility with increasing doping concentration was studied by the grain-boundary scattering and percolative conduction mechanism. By correlating the electrical and structural properties, it was found that varying the carrier concentration was more effective in changing the mobility than the grain-boundary scattering, due to the hopping conduction.

  19. Zirconium doped TiO2 thin films: A promising dielectric layer

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2016-05-01

    In the present work, we have fabricated the zirconium doped TiO2 thin (ZTO) films from a facile spin - coating method. The addition of Zirconium in TiO2 offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO2 thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ˜10-8 A/cm2. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compact and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.

  20. Zirconium doped TiO{sub 2} thin films: A promising dielectric layer

    SciTech Connect

    Kumar, Arvind; Mondal, Sandip Rao, K. S. R. Koteswara

    2016-05-06

    In the present work, we have fabricated the zirconium doped TiO{sub 2} thin (ZTO) films from a facile spin – coating method. The addition of Zirconium in TiO{sub 2} offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO{sub 2} thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ∼10{sup −8} A/cm{sup 2}. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compact and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.

  1. Efficiency enhancement of regular-type perovskite solar cells based on Al-doped ZnO nanorods as electron transporting layers

    NASA Astrophysics Data System (ADS)

    Huang, Zheng-Lun; Chen, Chih-Ming; Lin, Zheng-Kun; Yang, Sheng-Hsiung

    2017-02-01

    In this paper, we first incorporated Al(NO3)3·9H2O as the Al source into ZnO nanorods (NRs) lattice via the hydrothermal method to modify nature properties of ZnO NRs for the fabrication of perovskite solar cells (PSCs). The X-ray diffraction (XRD) pattern of Al-doped ZnO NRs exhibits higher 2θ values and stronger intensity of (002) plane. Larger optical band gap and higher electrical conductivity of Al-doped ZnO NRs are also observed relative to non-doped ZnO ones. The steady-state photoluminescence shows effective charge extraction and collection at the interface between Al-doped ZnO NRs and perovskite layer. The optimized PSC based on Al-doped ZnO NRs showed an open-circuit voltage of 0.84 V, a short-circuit current density of 21.93 mA/cm2, a fill factor of 57%, and a power conversion efficiency of 10.45% that was 23% higher than the non-doped ZnO ones.

  2. Simulation on SIMS depth profiling of delta-doped layer including relaxation caused by defects

    NASA Astrophysics Data System (ADS)

    Ishida, M.; Nagao, S.; Yamamura, Y.

    2001-06-01

    Using the dynamic Monte Carlo (MC) code, ACAT-DIFFUSE, the SIMS depth profiling of a multilayered thin film (Ta 2O 5 (18 nm)/SiO 2 (0.5 nm)) sample was investigated. The ACAT-DIFFUSE code is based on the binary collision approximation, taking into account the generation of interstitial atoms and vacancies, annihilation of vacancies, diffusion of interstitial atoms and primary ions and the relaxation of target materials according to the packing condition which include not only beam and target particles but also defects (interstitial atoms and vacancies). The observed 1-3 nm shift of the delta layer peak to the surface in SIMS depth profiles can be reproduced by the ACAT-DIFFUSE simulation. It is found that this peak shift is mainly due to the relaxation or expansion caused by defects produced behind the delta layer, not due to the collision mixing which results mainly in broadening the observed delta layer peak. Therefore, as ion energy decreases or the angle of incidence becomes large, the peak shift becomes small, because the total amount of defects produced behind the delta layer is small before the delta layer is sputtered off.

  3. Optical properties of double layer thin films zinc oxide doping aluminum (ZnO/Al) were deposited on glass substrates by sol gel method spray coating technique

    NASA Astrophysics Data System (ADS)

    Permatasari, Anes; Sutanto, Heri; Marito Siagian, Sinta

    2017-01-01

    Thin films of double layer of ZnO/Al has succeeded in deposition on a glass substrate using sol-gel method and spray coating techniques. Variations of doping Al as much as 2%, 4%, 6% and 8%. ZnO precursor synthesized using zinc acetate dehydrate (Zn(COOCH3)2.2H2O), isopropanol ((CH3)2CHOH) and monoethanolamine (MEA) were stirred using a magnetic stirrer for 45 minutes. ZnO precursor get homogeneous and then added of aluminum nitrate nonahydrate predetermined doping concentration and stirred again for 15 minutes. Deposition solution is done by the spray on a glass substrate and then heated at a temperature of 450°C. A layer of ZnO/Al deposited over the ZnO to produce a thin layer of a double layer. Optical properties layer of ZnO/Al characterized using UV-Vis spectrophotometer. Based on data from UV-Vis absorbance was determined the value of the energy band gap. Pure and dopped layers has different energy due the Al dopping. For pure ZnO layer has energy band gap of 3.347 eV and decreased to 3.09 eV for ZnO layer with Al dopant.

  4. Simulation of nucleation and growth of atomic layer deposition phosphorus for doping of advanced FinFETs

    SciTech Connect

    Seidel, Thomas E.; Goldberg, Alexander; Halls, Mat D.; Current, Michael I.

    2016-01-15

    Simulations for the nucleation and growth of phosphorus films were carried out using density functional theory. The surface was represented by a Si{sub 9}H{sub 12} truncated cluster surface model with 2 × 1-reconstructured (100) Si-OH terminations for the initial reaction sites. Chemistries included phosphorous halides (PF{sub 3}, PCl{sub 3}, and PBr{sub 3}) and disilane (Si{sub 2}H{sub 6}). Atomic layer deposition (ALD) reaction sequences were illustrated with three-dimensional molecular models using sequential PF{sub 3} and Si{sub 2}H{sub 6} reactions and featuring SiFH{sub 3} as a byproduct. Exothermic reaction pathways were developed for both nucleation and growth for a Si-OH surface. Energetically favorable reactions for the deposition of four phosphorus atoms including lateral P–P bonding were simulated. This paper suggests energetically favorable thermodynamic reactions for the growth of elemental phosphorus on (100) silicon. Phosphorus layers made by ALD are an option for doping advanced fin field-effect transistors (FinFETs). Phosphorus may be thermally diffused into the silicon or recoil knocked in; simulations of the recoil profile of phosphorus into a FinFET surface are illustrated.

  5. A novel way to enhance hydrogenation resistance of nano-layered titanium silicon carbide by the doping of aluminium

    NASA Astrophysics Data System (ADS)

    Chen, Chen; Xu, Canhui; Li, Fangzhi; Tan, Yongqiang; Zhang, Haibin; Peng, Shuming

    2016-08-01

    The outstanding irradiation and corrosion resistance of nano-layered Ti3SiC2 make it suitable for cladding materials in advanced nuclear systems. However, Ti3SiC2 shows the relatively poor thermal stability in hydrogen circumstance at high temperature, which is a big obstacle for its nuclear related applications. In this paper, we proposed an effective approach to improve the hydrogenation resistance of Ti3SiC2 by the doping of Al. The experimental results demonstrated that compared to pure Ti3SiC2, Ti3Si0.9Al0.1C2 (TSAC) displayed much better hydrogenation resistance. Through first-principles calculation, it was concluded that the introduction of H interstitial atom made the formation energy of Al vacancy much lower, so Al atoms became much easier to remove from TSAC than Si atoms and Ti atoms. The preferable loss of aluminium from TSAC substrate gave rise to the formation of Al2O3 layer, which improved the hydrogenation resistance of TSAC by inhibiting further reaction between TSAC and hydrogen.

  6. Modeling of nondestructive method for doped semiconductor layer diagnostics and experimental realization in a colloidal quantum dots

    NASA Astrophysics Data System (ADS)

    Smirnov, A. M.; Boriskin, A. G.; Dneprovskii, V. S.

    2017-06-01

    The goal of the work is modeling and development of nondestructive method for the doped semiconductor layer diagnostics and measurement of the impurity levels depth relatively to the conduction band. To carry out diagnostics for materials with a high linear absorption there is required a method allows to measure material characteristics on the surface layer. To solve this problem was chosen reflected degenerate four-wave mixing technique. Nonlinear response increases dramatically in the case of the resonant excitation of electron-hole transition. Reflected degenerate four-wave mixing has been discovered in the case of one-photon resonant excitation of the excitons (electron - hole) transition for the atomic-like model structure (highly absorbing colloidal solution of CdSe/ZnS quantum dots (QDs)) by powerful beams of mode-locked laser with picosecond pulse duration. Formation of the beams in forward direction can be explained both self-diffraction of the input beams at the induced one-dimensional photonic crystal (induced diffraction grating) and by forward degenerate four-wave mixing. Backward direction beams formation can be explained only by reflected degenerate four-wave mixing.

  7. High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer

    SciTech Connect

    Hai, Pham Nam; Yatsui, Takashi; Ohtsu, Motoichi; Tanaka, Masaaki

    2014-09-21

    We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p⁺-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ~700 K for a low input electrical power density of 0.4 W/cm², while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.

  8. Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate

    NASA Astrophysics Data System (ADS)

    Liang, Jiachang; Gao, Chengyao; Zhang, Liping; Jiang, Lihui; Yang, Zhengquan; Wang, Zhiping; Ji, Chaohui; Le, Xiaoyun; Rong, Cuihua; Zhang, Jian

    2011-05-01

    The boron-doped diamond film (BDD) grown on tantalum (Ta) substrate as an electrode (BDD/Ta) was prepared by hot filament chemical vapor deposition method. The experimental results demonstrated that our BDD/Ta had high current efficiency, strong ability to degrade wastewater, good corrosion stability and long lifetime. These excellent characteristics of BDD/Ta have been explained in terms of Rutherford backscattering (RBS) experiments. RBS investigation revealed that the continuous transient layer at the interface between boron-doped diamond film and Ta-substrate was formed and the microstructure of the continuous transient layer given by the continuous distribution of all element contents at the interface was obtained. The thicknesses of boron-doped diamond film and the continuous transient layer were about equal to 8000 × 10 15 atoms/cm 2 and 5800 × 10 15 atoms/cm 2, respectively. The formation of the continuous transient layer at the interface can eliminate the mismatch of thermal expansion coefficients (TEC) at the interface and only lead to the slow change of TEC because of the continuous distribution of element contents of the film and substrate in the transient layer at the interface. Thus, there is no residual stress to concentrate on the interface and the stress-corrosion delamination of the film disappears. Therefore, the corrosion stability and lifetime of BDD/Ta increase and last well, that have been verified by X-ray diffraction (XRD) experiments.

  9. Development of a highly transparent, low-resistance lithium-doped nickel oxide triple-layer film deposited by magnetron sputtering.

    PubMed

    Wu, Chia-Ching; Shih, Wei-Chen

    2017-01-31

    This research presents a triple-layer transparent conductive oxide thin film, with a lithium-doped nickel oxide/silver/lithium-doped nickel oxide (L-NiO/Ag/L-NiO) structure using radio-frequency (RF) magnetron sputtering on glass substrates. The high transmittance L-NiO thin films were deposited using the sputtering method with Ar/H2 as the reaction gases. The triple-layer structure, L-NiO/Ag/L-NiO, showed impressive electrical conductivity. The figure of merit (FOM) results indicated that the L-NiO/Ag/L-NiO triple-layer thin films with Ag deposition times of 2 min possessed satisfactory optical and electrical properties for potential applications.

  10. Features of the charge-transport mechanism in layered Bi{sub 2}Te{sub 3} single crystals doped with chlorine and terbium

    SciTech Connect

    Abdullaev, N. A. Abdullaev, N. M.; Aliguliyeva, H. V.; Kerimova, T. G.; Mehdiyev, G. S.; Nemov, S. A.

    2011-01-15

    The temperature dependences (T = 5-300 K) of the resistivity in the plane of layers and in the direction perpendicular to the layers, as well as the Hall effect and the magnetoresistance (H < 80 kOe, T = 0.5-4.2 K) in Bi{sub 2}Te{sub 3} single crystals doped with chlorine and terbium, are investigated. It is shown that the doping of Bi{sub 2}Te{sub 3} with terbium atoms results in p-type conductivity and in increasing hole concentration. The doping of Bi{sub 2}Te{sub 3} with chlorine atoms modifies also the character of its conductivity instead of changing only the type from p to n. In the temperature dependence of the resistivity in the direction perpendicular to layers, a portion arises with the activation conductivity caused by the hopping between localized states. The charge-transport mechanism in Bi{sub 2}Te{sub 3} single crystals doped with chlorine is proposed.

  11. Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures

    SciTech Connect

    Dorozhkin, S. I. Sychev, D. V.; Kapustin, A. A.

    2014-11-28

    We have implemented a new bolometric method to detect resonances in magneto-absorption of microwave radiation by two-dimensional electron systems (2DES) in selectively doped GaAs/AlGaAs heterostructures. Radiation is absorbed by the 2DES and the thermally activated conductivity of the doping layer supplying electrons to the 2DES serves as a thermometer. The resonant absorption brought about by excitation of the confined magnetoplasma modes appears as peaks in the magnetic field dependence of the low-frequency impedance measured between the Schottky gate and 2DES.

  12. Synthesis, Characterization And Optoelectrical Properties of Cd Doped ZnO Poly Crystalline Nano Thin Films Deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) Method

    NASA Astrophysics Data System (ADS)

    Bindal, Nitin; Sharma, Manisha; Kumar, H.; Sharma, S.; Upadhaya, S. C.

    2011-12-01

    Cadmium doped zinc oxide polycrystalline nano thin films were deposited on microscopic glass substrates following a modified chemical bath technique called Successive Ionic Layer Adsorption and Reaction (SILAR). Cadmium doping was found to increase the film grown rate. The X-ray diffraction pattern showed that films have polycrystalline nature. The SEM image revealed growth of large crystallites perpendicular to the substrates. The optical transmittance spectra indicate that these thin films have the direct energy band gap. The resistivity of these films decreased with increase in the temperature for all compositions, which confirmed the semiconducting nature of films.

  13. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    NASA Astrophysics Data System (ADS)

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

  14. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    PubMed Central

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials. PMID:26753877

  15. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer.

    PubMed

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-12

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

  16. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  17. Domain structure and properties of triglycine sulfate crystals with profile D, L-α- and L-α-alanine-doped layers

    NASA Astrophysics Data System (ADS)

    Tolstikhina, A. L.; Belugina, N. V.; Gainutdinov, R. V.; Ivanova, E. S.; Lashkova, A. K.; Shut, V. N.; Kashevich, I. F.; Mozzharov, S. E.

    2016-11-01

    A complex investigation of the domain structure and dielectric properties of triglycine sulfate (TGS) crystals containing profile layers doped with D, L-α-alanine (DLATGS) and L-α-alanine (LATGS) impurities is carried out. The images of the DLATGS and LATGS layers and ferroelectric domains are obtained by piezoelectric force microscopy; the parameters of the domain structure and the degree of unipolarity are determined. It is established that DLATGS layers are multidomain and LATGS stripes are mainly single-domain. The experimental data on the macroscopic dielectric properties of the crystals are compared with the results of a microscopic analysis of the domain structure.

  18. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric.

  19. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Léal, Ronan; Haddad, Farah; Poulain, Gilles; Maurice, Jean-Luc; Roca i Cabarrocas, Pere

    2017-02-01

    Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  20. Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition.

    PubMed

    Macco, Bart; Knoops, Harm C M; Kessels, Wilhelmus M M

    2015-08-05

    Hydrogen-doped indium oxide (In2O3:H) has recently emerged as an enabling transparent conductive oxide for solar cells, in particular for silicon heterojunction solar cells because its high electron mobility (>100 cm(2)/(V s)) allows for a simultaneously high electrical conductivity and optical transparency. Here, we report on high-quality In2O3:H prepared by a low-temperature atomic layer deposition (ALD) process and present insights into the doping mechanism and the electron scattering processes that limit the carrier mobility in such films. The process consists of ALD of amorphous In2O3:H at 100 °C and subsequent solid-phase crystallization at 150-200 °C to obtain large-grained polycrystalline In2O3:H films. The changes in optoelectronic properties upon crystallization have been monitored both electrically by Hall measurements and optically by analysis of the Drude response. After crystallization, an excellent carrier mobility of 128 ± 4 cm(2)/(V s) can be obtained at a carrier density of 1.8 × 10(20) cm(-3), irrespective of the annealing temperature. Temperature-dependent Hall measurements have revealed that electron scattering is dominated by unavoidable phonon and ionized impurity scattering from singly charged H-donors. Extrinsic defect scattering related to material quality such as grain boundary and neutral impurity scattering was found to be negligible in crystallized films indicating that the carrier mobility is maximized. Furthermore, by comparison of the absolute H-concentration and the carrier density in crystallized films, it is deduced that <4% of the incorporated H is an active dopant in crystallized films. Therefore, it can be concluded that inactive H atoms do not (significantly) contribute to defect scattering, which potentially explains why In2O3:H films are capable of achieving a much higher carrier mobility than conventional In2O3:Sn (ITO).

  1. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    SciTech Connect

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-15

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al{sup 3+} ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al{sup 3+} films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni{sup 3+}/Ni{sup 2+} also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni{sup 3+} making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni{sup 3+}/Ni{sup 2+} varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted.

  2. Highly phosphorus-doped crystalline Si layers grown by pulse-magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Fenske, Frank; Gorka, Benjamin

    2009-04-01

    The electrical properties of highly phosphorus-doped crystalline silicon films deposited by pulse-magnetron sputtering were studied. The films were grown, 450 nm thick, on Si(100) and Si(111) wafers at low substrate temperatures Ts of 450-550 °C and post-treated by rapid thermal annealing (RTA) and plasma hydrogenation (PH). In the case of films grown on Si(100), at all values of Ts postgrowth treatment by RTA resulted in an increase in the dopant activation up to 100% and of the Hall mobility to about bulklike values of 50 cm2 V-1 s-1. This result suggests high structural quality of the films on Si(100). The Si(111) films, which are typically more defective, exhibit a completely different behavior with a strong dependence of the electrical dopant activation and the Hall mobility on Ts. By post-treatment a maximum P donor activation level of 22% could be obtained. The variation in the post-treatment procedure (RTA+PH and PH+RTA) for the films deposited at high Ts showed that PH results only in minor changes in the film properties. The different influence of RTA and PH is discussed in terms of the different defect structure of the films. These investigations reveal that high Ts and after-treatment by RTA are the main preconditions for optimal electrical film properties.

  3. The role of nanoscale seed layers on the enhanced performance of niobium doped TiO2 thin films on glass

    DOE PAGES

    Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; ...

    2016-09-09

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

  4. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass.

    PubMed

    Nikodemski, Stefan; Dameron, Arrelaine A; Perkins, John D; O'Hayre, Ryan P; Ginley, David S; Berry, Joseph J

    2016-09-09

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.

  5. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass

    NASA Astrophysics Data System (ADS)

    Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; O’Hayre, Ryan P.; Ginley, David S.; Berry, Joseph J.

    2016-09-01

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.

  6. The role of nanoscale seed layers on the enhanced performance of niobium doped TiO2 thin films on glass

    SciTech Connect

    Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; O’Hayre, Ryan P.; Ginley, David S.; Berry, Joseph J.

    2016-09-09

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.

  7. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    PubMed

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

  8. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass

    PubMed Central

    Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; O’Hayre, Ryan P.; Ginley, David S.; Berry, Joseph J.

    2016-01-01

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity. PMID:27610922

  9. Simulation of oxide sputtering and SIMS depth profiling of delta-doped layer

    NASA Astrophysics Data System (ADS)

    Yamamura, Y.; Ishida, M.

    2003-01-01

    Using the dynamic Monte Carlo code, ACAT-DIFFUSE, the oxide sputtering and the SIMS depth profiling of a multilayered thin film sample was investigated. The ACAT-DIFFUSE code is based on the binary collision approximation, taking into account the generation of interstitial atoms and vacancies, annihilation of vacancies, diffusion and the relaxation of target materials according to the packing condition which include not only beam and target particles but also defects (interstitial atoms and vacancies). The observed shift of the delta layer peak to the surface in SIMS depth profiles can be reproduced by the ACAT-DIFFUSE simulation. It is found that this peak shift is mainly due to the relaxation or expansion caused by defects produced behind the delta layer, not due to preferential sputtering.

  10. Comment on "Superconductivity in electron-doped layered TiNCl with variable interlayer coupling"

    NASA Astrophysics Data System (ADS)

    Harshman, Dale R.; Fiory, Anthony T.

    2014-11-01

    In their article, Zhang et al. [Phys. Rev. B 86, 024516 (2012), 10.1103/PhysRevB.86.024516] present a remarkable result for Ax(S) yTiNCl compounds (α -phase TiNCl partially intercalated with alkali A and optionally co-intercalated molecular species S ), finding the superconducting transition temperature Tc scales with d-1, where the spacing d between TiNCl-layered structures depends on intercalant thickness. Recognizing that this behavior indicates interlayer coupling, Zhang et al. cite, among other papers, the interlayer Coulombic pairing mechanism picture [Harshman et al., J. Phys.: Condens. Matter 23, 295701 (2011), 10.1088/0953-8984/23/29/295701]. This Comment shows that superconductivity occurs by interactions between the chlorine layers of the TiNCl structure and the layers containing Ax, wherein the transverse Ax-Cl separation distance ζ is smaller than d . In the absence of pair-breaking interactions, the optimal transition temperature is modeled by Tc 0∝(σ/A ) 1 /2ζ-1 , where σ /A is the fractional charge per area per formula unit. Particularly noteworthy are the rather marginally metallic trends in resistivities of Ax(S) yTiNCl , indicating high scattering rates, which are expected to partially originate from remote Coulomb scattering (RCS) from the Ax ions. By modeling a small fraction of the RCS as inducing pair breaking, taken to cut off exponentially with ζ , observations of Tc7 Å . Since a spatially separated alkali-ion layer is not formed in L i0.13TiNCl , the observed Tc of 5.9 K is attributed to an intergrowth phase related to TiN (Tc=5.6 K ).

  11. The properties of vacuum-evaporated CdS and CdSe double layered films doping with copper and chlorine

    SciTech Connect

    Gu, P.F.; Li, H.F.; Zhu, Z.C.; Tang, J.F.

    1993-12-31

    The effect of doping with copper and chlorine on various properties of vacuum-evaporated CdS and CdSe double layers has been studied. The properties specifically studied were: (1) the dark conductivity and photoconductivity as functions of the doping concentration and the ratio of copper to chlorine, (2) the response time of various photoconductive films and (3) the optical absorption and spectral response. It was found that the dark conductivity decreases and the photoconductivity increases significantly if the ratio of Cu to Cl is suitable. The response time was about 5--10 ms for doping films and more than 100 ms for undoping ones. The optical absorption increases and the spectral response moves to a longer wavelength as the concentration of CdSe increases. The response wavelength can be changed by adjusting the thickness ratio of CdS to CdSe.

  12. Highly conducting and wide band gap phosphorous doped nc-Si-QD/a-SiC films as n-type window layers for solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-05-01

    Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH4 + CH4)-plasma with PH3 as the doping gas. The effect of PH3 flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si-QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10-2 S cm-1) are obtained, which could be appropriately used as n-type window layers for nc-Si solar cells in n-i-p configuration.

  13. Highly conducting and wide band gap phosphorous doped nc-Si–QD/a-SiC films as n-type window layers for solar cells

    SciTech Connect

    Kar, Debjit; Das, Debajyoti

    2016-05-23

    Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH{sub 4} + CH{sub 4})-plasma with PH{sub 3} as the doping gas. The effect of PH{sub 3} flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si–QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10{sup −2} S cm{sup −1}) are obtained, which could be appropriately used as n-type window layers for nc-Si solar cells in n-i-p configuration.

  14. Enhancing of catalytic properties of vanadia via surface doping with phosphorus using atomic layer deposition

    SciTech Connect

    Strempel, Verena E.; Naumann d'Alnoncourt, Raoul; Löffler, Daniel; Kröhnert, Jutta; Skorupska, Katarzyna; Johnson, Benjamin; Driess, Matthias; Rosowski, Frank

    2016-01-15

    Atomic layer deposition is mainly used to deposit thin films on flat substrates. Here, the authors deposit a submonolayer of phosphorus on V{sub 2}O{sub 5} in the form of catalyst powder. The goal is to prepare a model catalyst related to the vanadyl pyrophosphate catalyst (VO){sub 2}P{sub 2}O{sub 7} industrially used for the oxidation of n-butane to maleic anhydride. The oxidation state of vanadium in vanadyl pyrophosphate is 4+. In literature, it was shown that the surface of vanadyl pyrophosphate contains V{sup 5+} and is enriched in phosphorus under reaction conditions. On account of this, V{sub 2}O{sub 5} with the oxidation state of 5+ for vanadium partially covered with phosphorus can be regarded as a suitable model catalyst. The catalytic performance of the model catalyst prepared via atomic layer deposition was measured and compared to the performance of catalysts prepared via incipient wetness impregnation and the original V{sub 2}O{sub 5} substrate. It could be clearly shown that the dedicated deposition of phosphorus by atomic layer deposition enhances the catalytic performance of V{sub 2}O{sub 5} by suppression of total oxidation reactions, thereby increasing the selectivity to maleic anhydride.

  15. Effect of MTAD as a final rinse on removal of smear layer in ten-minute preparation time.

    PubMed

    Lotfi, Mehrdad; Vosoughhosseini, Sepideh; Saghiri, Mohammad Ali; Zand, Vahid; Ranjkesh, Bahram; Ghasemi, Negin

    2012-10-01

    The aim of this study was to evaluate the effect of MTAD as final rinse on removal of the smear layer subsequent to primary irrigation with 1.3% sodium hypochlorite (NaOCl) during 10-minute instrumentation periods. Forty teeth were divided into 2 experimental groups, each containing 15 teeth, and 1 positive control group of 10 teeth. The canals were prepared with hand and rotary instruments. In the MTAD group, the root canals were flushed with 1.3% NaOCl solution during 10-minute instrumentation, and MTAD was used as the final rinse. In other experimental group, 5.25% NaOCl was used during instrumentation, and 17% ethylenediaminetetraacetic acid (EDTA) was used as the final rinse. In the positive control group, sterile distilled water was used for irrigation. The overall instrumentation period for each canal was 10 minutes. The amount of the smear layer and degree of erosion qualified according to the study by Torabinejad et al by using a scanning electron microscope. Data were analyzed by Kruskal-Wallis and Mann-Whitney tests. All statistical analyses were set with a significance level of α = 0.05. In the positive control group, debris and heavy smear layer covered the root canal surface and the tubules. In MTAD group, moderate smear layer covered the root canal surface and the tubules. In EDTA group, there was no smear layer on surface of canals. There were significant differences between groups (α < 0.0001). Mann-Whitney test showed significant difference between experimental groups (α = 0.01). In 10-minute instrumentation period, the use of 5.25% NaOCl during instrumentation and 17% EDTA as the final rinse is more effective than using 1.3% NaOCl as primary irrigation and MTAD as final rinse on removal of the smear layer. Copyright © 2012 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

  16. Final report on LDRD Project: The double electron layer tunneling transistor (DELTT)

    SciTech Connect

    Simmons, J.A.; Moon, J.S.; Blount, M.A.

    1998-06-01

    This report describes the research accomplishments achieved under the LDRD Project ``Double Electron Layer Tunneling Transistor.`` The main goal of this project was to investigate whether the recently discovered phenomenon of 2D-2D tunneling in GaAs/AlGaAs double quantum wells (DQWs), investigated in a previous LDRD, could be harnessed and implemented as the operating principle for a new type of tunneling device the authors proposed, the double electron layer tunneling transistor (DELTT). In parallel with this main thrust of the project, they also continued a modest basic research effort on DQW physics issues, with significant theoretical support. The project was a considerable success, with the main goal of demonstrating a working prototype of the DELTT having been achieved. Additional DELTT advances included demonstrating good electrical characteristics at 77 K, demonstrating both NMOS and CMOS-like bi-stable memories at 77 K using the DELTT, demonstrating digital logic gates at 77 K, and demonstrating voltage-controlled oscillators at 77 K. In order to successfully fabricate the DELTT, the authors had to develop a novel flip-chip processing scheme, the epoxy-bond-and-stop-etch (EBASE) technique. This technique was latter improved so as to be amenable to electron-beam lithography, allowing the fabrication of DELTTs with sub-micron features, which are expected to be extremely high speed. In the basic physics area they also made several advances, including a measurement of the effective mass of electrons in the hour-glass orbit of a DQW subject to in-plane magnetic fields, and both measurements and theoretical calculations of the full Landau level spectra of DQWs in both perpendicular and in-plane magnetic fields. This last result included the unambiguous demonstration of magnetic breakdown of the Fermi surface. Finally, they also investigated the concept of a far-infrared photodetector based on photon assisted tunneling in a DQW. Absorption calculations showed a

  17. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    NASA Astrophysics Data System (ADS)

    Kizu, Takio; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto; Tsukagoshi, Kazuhito

    2016-07-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (VO) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense VO in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  18. Layered structure of anodic SiO{sub 2} films doped with phosphorus or boron

    SciTech Connect

    Mileshko, L. P.

    2009-12-15

    It is shown that anodic silicon oxide films deposited by reanodization (repeated anodic oxidation) of p- and n-type silicon in phosphate (1.5 M H{sub 3}PO{sub 4}), borate (1.5 M H{sub 3}BO{sub 3}), and nitrate (0.04 M NH{sub 4}NO{sub 3}) electrolytes based on tetrahydrofurfuryl alcohol have a three- or four-layer structure both before and after high-temperature annealing. It is assumed that this circumstance accounts for the nonuniform distribution of phosphorus and boron across the thickness of anodic SiO{sub 2}.

  19. Improvement of device efficiency for blue organic light emitting diodes by controlling the Cs2CO3-doped electron transport layer

    NASA Astrophysics Data System (ADS)

    Fu, Richard; Shi, Jianmin; Forsythe, Eric; Blomquist, Steven; Srour, Merric; Morton, David

    2014-01-01

    The electronic transport properties of 1, 3, 5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBI) electron transporting layers (ETLs) have been investigated as a function of cesium carbonate (Cs2CO3) doping for organic light-emitting diodes (OLEDs). The current density-voltage and light emission characteristics were measured as a function of the Cs2CO3-doped ETL thickness. Cs2CO3-doped TPBI decreased OLED operating voltage by 26% and increased device luminance by 17% in a wide concentration range (3.5% to 10.5%) compared to undoped devices. The effects of 7% Cs2CO3-doped ETL thickness indicated that the operating voltage continuously decreased to 37% when the ETL thickness increased to 600 Å and luminance output continued to increase to 21% at ETL thickness 525 Å. The blue OLED can be optimized by adjusting the thicknesses of Cs2CO3-doped TPBI ETL to balance the electron and hole injection.

  20. Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB6 interfacial layer

    NASA Astrophysics Data System (ADS)

    Maeda, Yasutaka; Ohmi, Shun-ichiro

    2017-04-01

    A pentacene-based organic field-effect transistor (OFET) is necessary to work at a low operation voltage and a steep subthreshold swing. The subthreshold swing of pentacene-based OFET was markedly improved by introducing a nitrogen-doped LaB6 interfacial layer (N-doped LaB6 IL) although charge-injection-type hysteresis was observed in I D–V G characteristics. In this study, the thickness dependence of N-doped LaB6 IL for p-type pentacene-based OFET was investigated. A 1.2–2.7-nm-thick N-doped LaB6 IL was deposited on an SiO2 gate insulator by RF sputtering at an RF power of 20–30 W. It was found that a 1.2-nm-thick N-doped LaB6 IL realized a steep subthreshold swing of 75 mV/dec with a mobility of 0.26 cm2/(V·s) for p-type pentacene-based OFET.

  1. Self-doped superconductivity in tri-layered Ba 2Ca 2Cu 3O 6F 2: A 63Cu-NMR study

    NASA Astrophysics Data System (ADS)

    Shimizu, S.; Mukuda, H.; Kitaoka, Y.; Iyo, A.; Kodama, Y.; Tanaka, Y.; Tokiwa, K.; Watanabe, T.

    2008-04-01

    We report a 63Cu-NMR study on a tri-layered high-temperature superconductor Ba 2Ca 2Cu 3O 6F 2(0223F(2.0)), which is composed of two outer planes (OPs) and one inner plane (IP). Since all of the apical oxygen sites are substituted by fluorine, this cuprate has a nominalCuvalence on average and should be antiferromagnetic insulator, however it is a superconductor with Tc=76 K. The Cu-NMR study has demonstrated that IP is hole-doped with a doping level of 13-15% and hence each doping level at two OPs is estimated to be 6-8% by incorporating a total charge balance. Such the self-doping that electrons are transferred from IP to OPs causes the superconductivity in 0223F(2.0) as well as in four-layered Ba 2Ca 3Cu 4O 8F 2 (0234F(2.0)).

  2. Doping Profiles for Indium Antimonide Magnetoresistors

    NASA Astrophysics Data System (ADS)

    Partin, D. L.; Heremans, J.; Thrush, C. M.

    1997-03-01

    Indium antimonide is of interest for magnetoresistors in position sensors. These sensors are fabricated as thin film elements in order to increase the device impedance. The InSb is doped n-type to stabilize the electron density against temperature changes. This involves tradeoffs, since ionized donors scatter electrons, reducing their mobility and hence reducing the device sensitivity to a magnetic field. Optimizing the sensitivity involved three steps. The InSb is undoped for the first 10 to 20 percent of the film thickness, forming a buffer from the lattice mismatched substrate. The doping in the middle layer of the film has a doping gradient. Finally, a thin contact layer is more heavily doped to reduce contact resistance.

  3. Electron-Phonon Interactions in Field-Effect Doped Layers of Crystalline C_60

    NASA Astrophysics Data System (ADS)

    Romero, Nichols A.; Kim, Jeongnim; Martin, Richard M.

    2002-03-01

    Recent developments [1] have shown that MOS-FET devices can induce 2-D metallic layers in C_60 with a high carrier density. For 2-4 holes per C_60, superconductivity has been observed with transition temperatures Tc as high as 52 K in pure C_60 [1a] and 117 K in intercalated C_60 [1b], the highest Tc reported for any non-copper-oxide superconductor. Density functional calculations [2] have shown that the carriers are confined to 2-D bands, with states that are highly distorted due to the field and 2-D Fermi surfaces that are very sensitive to the orientational order. In this work we study the electron-phonon interactions for the metallic interface states, motivated by the evidence that superconductivity in the bulk is electron-phonon mediated. Calculations are performed with the SIESTA local orbital DFT code [3] for a range of electron and hole densities in various ordered C_60 layers. *Supported by NSF DMR 99-76550 and DOE DEFG-96-ER45439. [1] [a]J. H. Schön, Ch. Kloc and B. Batlogg, Nature 408, 549 (2000); [b] Science 293, 2432 (2001). [2] J. L. Mozos, P. Ordejón and R. Martin, to be published. [3] P. Ordejón E. Artacho, and J. M. Soler, Phys. Rev. B 53, R10441 (1996).

  4. DNA translocation through a nanopore in a single-layered doped semiconductor membrane.

    PubMed

    Jou, Ining A; Melnikov, Dmitriy V; McKinney, Christopher R; Gracheva, Maria E

    2012-12-01

    Recently, we developed a computational model that allowed us to study the influence a semiconductor membrane has on a DNA molecule translocating through a nanopore in this membrane. Our model incorporated both the self-consistent Poisson-Nernst-Planck simulations for the electric potential of a solid state membrane immersed in an electrolyte solution together with the Brownian dynamics of the biomolecule. In this paper, we study how the applied electrolyte bias, the semiconductor membrane bias, and the semiconductor material type (n-Si or p-Si) affect the translocation dynamics of a single-stranded DNA moving through a nanopore in a single-layered semiconductor membrane. We show that the type of semiconductor material used for the membrane has a prominent effect on the biomolecule's translocation time, with DNA exhibiting much longer translocation times through the p-type membrane than through the n type at the same electrolyte and membrane potentials, while the extension of the biomolecule remains practically unchanged. In addition, we find the optimal combination for the membrane-electrolyte system's parameters to achieve the longest translocation time and largest DNA extension. With our single-layered electrically tunable membranes, the DNA translocation time can be manipulated to have an order of magnitude increase.

  5. AC Electrical Conduction of Cr-Doped SrTiO3 Thin Films with an Oxygen-Deficient Interface Layer

    NASA Astrophysics Data System (ADS)

    Phan, Bach Thang; Eom, Ki Tae; Lee, Jaichan

    2017-01-01

    The ac electrical conduction of Cr-doped SrTiO3 thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped SrTiO3 (Cr-STO) thin films with an ultra-thin (˜2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-SrTiO3-δ , and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-SrTiO3 layer.

  6. Numerical Analysis of In2S3 Layer Thickness, Band Gap and Doping Density for Effective Performance of a CIGS Solar Cell Using SCAPS

    NASA Astrophysics Data System (ADS)

    Khoshsirat, Nima; Md Yunus, Nurul Amziah

    2016-11-01

    The effect of indium sulfide buffer layer's geometrical and electro-optical properties on the Copper-Indium-Gallium-diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost impacts of buffer layer thickness, band gap, and doping density on the cells output parameters such as open circuit voltage, short circuit current density, fill factor, and the efficiency were extensively simulated. The results show that the cell efficiency, which was innovatively illustrated as a two-dimensional contour plot function, depends on the buffer layer electron affinity and doping density by keeping all the other parameters at a steady state. The analysis, which was made from this numerical simulation, has revealed that the optimum electron affinity is to be 4.25 ± 0.2 eV and donor density of the buffer layer is over 1× 10 ^{17} cm^{-3}. It is also shown that the cell with an optimum thin buffer layer has higher performance and efficiency due to the lower optical absorption of the buffer layer.

  7. Distinct Oxygen Hole Doping in Different Layers of Sr2CuO4/La2CuO4 Superlattices

    SciTech Connect

    Smadici S.; Bozovic I.; Lee, J.C.T.; Rusydi, A.; Logvenov, G.; Abbamonte, P.

    2012-03-28

    X-ray absorption in Sr{sub 2}CuO{sub 4-{delta}}/La{sub 2}CuO{sub 4} (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x {approx}< x{sub optimal} in bulk La{sub 2-x}Sr{sub x}CuO{sub 4} and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

  8. Distinct oxygen hole doping in different layers of Sr₂CuO4-δ/La₂CuO₄ superlattices

    SciTech Connect

    Smadici, S.; Lee, J. C. T.; Rusydi, A.; Logvenov, G.; Bozovic, I.; Abbamonte, P.

    2012-03-28

    X-ray absorption in Sr₂CuO4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲xoptimal in bulk La2-xSrxCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

  9. A FeCl2-graphite sandwich composite with Cl doping in graphite layers: a new anode material for high-performance Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Guo, Cong; Zhu, Yongchun; Zhou, Jianbin; Fan, Long; Qian, Yitai

    2014-11-01

    A composite with FeCl2 nanocrystals sandwiched between Cl-doped graphite layers has been created via a space-confined nanoreactor strategy. This composite can be used as a new type of anode material for Li-ion batteries, which exhibit high reversible capacity and superior rate capability with excellent cycle life.A composite with FeCl2 nanocrystals sandwiched between Cl-doped graphite layers has been created via a space-confined nanoreactor strategy. This composite can be used as a new type of anode material for Li-ion batteries, which exhibit high reversible capacity and superior rate capability with excellent cycle life. Electronic supplementary information (ESI) available: Experimental section and Fig. S1-S8. See DOI: 10.1039/c4nr05070c

  10. Ga-doped ZnO transparent electrodes with TiO2 blocking layer/nanoparticles for dye-sensitized solar cells

    PubMed Central

    2012-01-01

    Ga-doped ZnO [GZO] thin films were employed for the transparent electrodes in dye-sensitized solar cells [DSSCs]. The electrical property of the deposited GZO films was as good as that of commercially used fluorine-doped tin oxide [FTO]. In order to protect the GZO and enhance the photovoltaic properties, a TiO2 blocking layer was deposited on the GZO surface. Then, TiO2 nanoparticles were coated on the blocking layer, and dye was attached for the fabrication of DSSCs. The fabricated DSSCs with the GZO/TiO2 glasses showed an enhanced conversion efficiency of 4.02% compared to the devices with the normal GZO glasses (3.36%). Furthermore, they showed better characteristics even than those using the FTO glasses, which can be attributed to the reduced charge recombination and series resistance. PMID:22222148

  11. Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

    NASA Astrophysics Data System (ADS)

    Lee, Sol Kyu; Seok, Ki Hwan; Chae, Hee Jae; Lee, Yong Hee; Han, Ji Su; Jo, Hyeon Ah; Joo, Seung Ki

    2017-03-01

    We report a novel method to reduce source and drain (S/D) resistances, and to form a lightly doped layer (LDL) of bottom-gate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). For application in driving TFTs, which operate under high drain voltage condition, poly-Si TFTs are needed in order to attain reliability against hot-carriers as well as high field-effect mobility (μFE). With an additional doping on the p+ Si layer, sheet resistance on S/D was reduced by 37.5% and an LDL was introduced between the channel and drain. These results contributed to not only a lower leakage current and gate-induced drain leakage, but also high immunity of kink-effect and hot-carrier stress. Furthermore, the measured electrical characteristics exhibited a steep subthreshold slope of 190 mV/dec and high μFE of 263 cm2/Vs.

  12. High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.

    PubMed

    Horng, Ray-Hua; Shen, Kun-Ching; Yin, Chen-Yang; Huang, Chiung-Yi; Wuu, Dong-Sing

    2013-06-17

    High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.

  13. Surface plasmon resonance based fiber optic trichloroacetic acid sensor utilizing layer of silver nanoparticles and chitosan doped hydrogel

    NASA Astrophysics Data System (ADS)

    Semwal, Vivek; Shrivastav, Anand M.; Gupta, Banshi D.

    2017-02-01

    In this study, we report a silver nanoparticles/chitosan doped hydrogel-based fiber optic sensor for the detection of trichloroacetic acid (TCA). The sensor is based on the combined phenomenon of localized and propagating surface plasmons. The sensing relies on the interaction of TCA with silver nanoparticles (AgNP) which results in the electron transfer between the negative group of TCA and positive amino group of AgNP stabilizer (chitosan). This alters the mechanical properties/refractive index of the AgNP embedded hydrogel matrix as well as the refractive index of the AgNP. The change in refractive index of both in turn changes the effective refractive index of the nanocomposite hydrogel layer which can be determined using the Maxwell-Garnet Theory. Four stage optimization of the probe fabrication parameters is performed to obtain the best performance of the sensing probe. The sensor operates in the TCA concentration range 0-120 μm which is harmful for the humans and environment. The shift in peak extinction wavelength observed for the same TCA concentration range is 42 nm. The sensor has the linearity range for the TCA concentration range of 40-100 μm. The sensor possesses high sensitivity, selectivity and numerous other advantages such as ease of handling, quick response, modest cost and capability of online monitoring and remote sensing.

  14. Surface plasmon resonance based fiber optic trichloroacetic acid sensor utilizing layer of silver nanoparticles and chitosan doped hydrogel.

    PubMed

    Semwal, Vivek; Shrivastav, Anand M; Gupta, Banshi D

    2017-02-10

    In this study, we report a silver nanoparticles/chitosan doped hydrogel-based fiber optic sensor for the detection of trichloroacetic acid (TCA). The sensor is based on the combined phenomenon of localized and propagating surface plasmons. The sensing relies on the interaction of TCA with silver nanoparticles (AgNP) which results in the electron transfer between the negative group of TCA and positive amino group of AgNP stabilizer (chitosan). This alters the mechanical properties/refractive index of the AgNP embedded hydrogel matrix as well as the refractive index of the AgNP. The change in refractive index of both in turn changes the effective refractive index of the nanocomposite hydrogel layer which can be determined using the Maxwell-Garnet Theory. Four stage optimization of the probe fabrication parameters is performed to obtain the best performance of the sensing probe. The sensor operates in the TCA concentration range 0-120 μm which is harmful for the humans and environment. The shift in peak extinction wavelength observed for the same TCA concentration range is 42 nm. The sensor has the linearity range for the TCA concentration range of 40-100 μm. The sensor possesses high sensitivity, selectivity and numerous other advantages such as ease of handling, quick response, modest cost and capability of online monitoring and remote sensing.

  15. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets

    NASA Astrophysics Data System (ADS)

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-03-01

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics.

  16. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets.

    PubMed

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-03-24

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics.

  17. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets

    PubMed Central

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-01-01

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics. PMID:27010509

  18. Asymmetric Stark shift in an impurity doped dome-shaped quantum dot with wetting layer

    NASA Astrophysics Data System (ADS)

    Niculescu, E. C.; Cristea, M.; Bejan, D.

    2017-02-01

    The effects of vertical electric field and donor impurity on the electronic properties of the dome-shaped InAs/GaAs quantum dot coupled to its wetting layer were investigated. The dependence of the electron density, energy and Stark shift of the S-, P- and WL-states on the applied electric field was studied with and without impurity. The S- and P-states have no significant qualitative changes in the shape of the wave functions with increasing the electric field, except that they become slightly shifted due to the competition between the field action and the quantum confinement. The wave function of the WL-state is strongly modified in polarized structures. Our results reveal that the Stark shift of electron energies can be fitted with a quadratic dependence on the electric field, the linear and quadratic terms corresponding to the dipole moment and static electron polarizability. Their estimated values reasonable agree with those calculated.

  19. Highly emissive and low refractive index layers from doped silica nanospheres for solar cell applications

    NASA Astrophysics Data System (ADS)

    Haranath, D.; Gandhi, Namita; Sahai, Sonal; Husain, M.; Shanker, Virendra

    2010-08-01

    Confinement of europium (Eu 3+) ions in silica (SiO 2) nanospheres yields efficient red-emitting nanophosphors when excited via charge transfer states (CTS) absorption in UV (393 nm) radiation. This is explained on the basis of modulation of f-f transition due to quantum confinement of rare-earth ion in a nanosize host. It is also evidenced that the short range crystallanity and confinement effects provided by the nanospheres increases the Eu 3+ emission intensity by almost ten times at the expense of CTS. Coating of organically modified SiO 2 nanospheres resulted in low refractive index layers that are highly useful as cover glazing for solar collectors.

  20. Improved Thermoelectric Characteristics of Si-Doped Misfit-Layered Cobaltite

    NASA Astrophysics Data System (ADS)

    Liu, Chia-Jyi; Huang, Yu-Chih; Nong, N. V.; Liu, Yen-Liang; Petŕićek, V.

    2011-05-01

    The cobaltite Ca3Co4O9+ δ has shown large thermopower and is considered to be a good candidate for use as a thermoelectric material. The composition of Ca3Co4O9+ δ is better expressed as [Ca2CoO3][CoO2] b1/ b2 with the misfit-layered structure featuring different periodicities along the b axis, with b 1 referring to the b-axis length of the NaCl-type [Ca2CoO3] sublattice and b 2 referring to the b-axis length of the [CoO2] sublattice. The crystal structure of Ca3Co4O9+ δ can be viewed as being of two subsystems, i.e., the distorted NaCl-type [Ca2CoO3] sublattice and the CdI2-type [CoO2] sublattice, alternately stacked along the c-axis. In this paper, we report measurements of the electrical resistivity and Seebeck coefficient for a series of misfit-layered oxides Ca3Co4- x Si x O9+ δ prepared by solid-state reaction. Structural parameters are refined with the superspace group X2/m(0β0)s0 using powder x-ray diffraction data. With partial substitution of Si4+ for Co3+, the resistivity decreases, while the thermopower increases simultaneously. These results indicate that partial substitution of Si4+ improves the thermoelectric characteristics of Ca3Co4O9+ δ .

  1. Effects of rapid thermal annealing on two-dimensional delocalized electronic states of the epitaxial N δ-doped layer in GaAs

    SciTech Connect

    Ogawa, Yasuhiro; Harada, Yukihiro; Baba, Takeshi; Kaizu, Toshiyuki; Kita, Takashi

    2016-03-14

    We have conducted rapid thermal annealing (RTA) for improving the two-dimensional (2D) arrangement of electronic states in the epitaxial nitrogen (N) δ-doped layer in GaAs. RTA rearranged the N-pair configurations in the GaAs (001) plane and reduced the number of non-radiative recombination centers. Furthermore, a Landau shift, representing the 2D delocalized electronic states in the (001) plane, was observed at around zero magnetic field intensity in the Faraday configuration.

  2. Nickel Nanoparticles Encapsulated in Few-Layer Nitrogen-Doped Graphene Derived from Metal-Organic Frameworks as Efficient Bifunctional Electrocatalysts for Overall Water Splitting.

    PubMed

    Xu, You; Tu, Wenguang; Zhang, Bowei; Yin, Shengming; Huang, Yizhong; Kraft, Markus; Xu, Rong

    2017-03-01

    Nickel nanoparticles encapsulated in few-layer nitrogen-doped graphene (Ni@NC) are synthesized by using a Ni-based metal-organic framework as the precursor for high-temperature annealing treatment. The resulting Ni@NC materials exhibit highly efficient and ultrastable electrocatalytic activity toward the hydrogen evolution reaction and the oxygen evolution reaction as well as overall water splitting in alkaline environment.

  3. High-efficiency inverted organic solar cells with polyethylene oxide-modified Zn-doped TiO2 as an interfacial electron transport layer.

    PubMed

    Thambidurai, M; Kim, Jun Young; Ko, Youngjun; Song, Hyung-Jun; Shin, Hyeonwoo; Song, Jiyun; Lee, Yeonkyung; Muthukumarasamy, N; Velauthapillai, Dhayalan; Lee, Changhee

    2014-08-07

    High efficiency inverted organic solar cells are fabricated using the PTB7:PC71BM polymer by incorporating Zn-doped TiO2 (ZTO) and 0.05 wt% PEO:ZTO as interfacial electron transport layers. The 0.05 wt% PEO-modified ZTO device shows a significantly increased power conversion efficiency (PCE) of 8.10%, compared to that of the ZTO (7.67%) device.

  4. One-step synthesis of layered yttrium hydroxides in immiscible liquid–liquid systems: Intercalation of sterically-bulky hydrophobic organic anions and doping of europium ions

    SciTech Connect

    Watanabe, Mebae; Fujihara, Shinobu

    2014-02-15

    Inorganic–organic layered rare-earth compounds were synthesized on the basis of a biphasic liquid–liquid system in one pot. Layered yttrium hydroxides (LYHs) were chosen as a host material for the intercalation of hydrophobic organic guest anions such as benzoate, sebacate, or laurate. In a typical synthesis, an organic phase dissolving carboxylic acid was placed in contact with an equal amount of an aqueous phase dissolving yttrium nitrate n-hydrate and urea. At elevated temperatures up to 80 °C, urea was hydrolyzed to release hydroxyl anions which were used to form yttrium hydroxide layers. LYHs were then precipitated with the intercalation of carboxylate anions delivered from the organic phase under the distribution law. The structure and the morphology of the LYHs could be modulated by the intercalated anions. Doped with Eu{sup 3+} ions, the LYHs exhibited red photoluminescence which was enhanced by the intercalated anions due to the antenna effect. - Graphical abstract: The Eu{sup 3+}-doped layered yttrium hydroxide exhibits intense red photoluminescence after intercalation of benzoate ions. Display Omitted - Highlights: • Immiscible biphasic liquid systems were introduced to synthesize layered yttrium hydroxides. • The temperature of the biphasic systems does not exceed 80 °C in one step of the synthesis. • Hydrophobic organic anions were intercalated between the hydroxide layers in one pot. • Structure and morphology of the hydroxides were modulated by changing the kind of organic anions. • Eu{sup 3+}-doping led to red luminescence from the hydroxides in association with the intercalated organic anions.

  5. Surface modification of Na3V2(PO4)3 by nitrogen and sulfur dual-doped carbon layer with advanced sodium storage property.

    PubMed

    Liang, Xinghui; Ou, Xing; Zheng, Fenghua; Pan, Qichang; Xiong, Xunhui; Hu, Renzong; Yang, Chenghao; Liu, Meilin

    2017-03-27

    Nitrogen and sulfur dual-doped carbon layer wrapped Na3V2(PO4)3 nanoparticles (NVP@NSC) have been successfully fabricated by a facile solid-state method. In this hierarchical structure, the Na3V2(PO4)3 nanoparticles are well dispersed and closely coated by nitrogen and sulfur dual-doped carbon layer, constructing an effective and interconnected conducting network to reduce the internal resistance. Furthermore, the uniform coating layers alleviate the agglomeration of Na3V2(PO4)3, as well as mitigate the side reaction between electrode and electrolyte. Due to the excellent electron transfer mutually enhancing sodium diffusion for this extraordinary structure, the NVP@NSC composite delivers an impressive discharge capacity of 113.0 mAh g-1 at 1C, and shows a capacity retention of 82.1% after 5000 cycles at an ultrahigh rate of 50C, suggesting the remarkable rate capability and long cyclicity. Surprisingly, a reversible capacity of 91.1 mAh g-1 is maintained after 1000 cycles at 5C under the elevated temperature of 55°C. The approach of nitrogen and sulfur dual-doped carbon coated Na3V2(PO4)3 provides an effective and promising strategy to enhance the ultrahigh rate and ultralong life property of cathode, which can be used for large-scale commercial production in sodium ion batteries.

  6. Low amplified spontaneous emission threshold and suppression of electroluminescence efficiency roll-off in layers doped with ter(9,9′-spirobifluorene)

    SciTech Connect

    Inoue, Munetomo; Matsushima, Toshinori; Adachi, Chihaya

    2016-03-28

    We demonstrate that ter(9,9′-spirobifluorene) (TSBF) doped in a host matrix layer of 4,4′-bis(carbazol-9-yl)biphenyl (CBP) shows a low amplified spontaneous emission (ASE) threshold (E{sub th} = 1.0 μJ cm{sup −2}) and suppressed electroluminescence efficiency roll-off at high current densities (no roll-off up to 100 mA cm{sup −2}). One origin of the low ASE threshold is that the TSBF-doped CBP layer possesses a very large radiative decay constant (k{sub r} = 1.1 × 10{sup 9 }s{sup −1}). Singlet–triplet annihilation is almost suppressed in the TSBF-doped CBP layer, which can be ascribed to the small overlap between the emission and triplet absorption of TSBF. Also, the small energy level difference between TSBF and CBP minimizes carrier trapping in TSBF, leading to the suppression of singlet–polaron annihilation. TSBF showed one of the lowest E{sub th} and the most suppressed efficiency roll-off among organic laser dyes investigated in this study and, therefore, is believed to be a promising candidate to realize electrically pumped organic semiconductor laser diodes in the future.

  7. Final-state effect on x-ray photoelectron spectrum of nominally d1 and n -doped d0 transition-metal oxides

    NASA Astrophysics Data System (ADS)

    Lin, Chungwei; Posadas, Agham; Hadamek, Tobias; Demkov, Alexander A.

    2015-07-01

    We investigate the x-ray photoelectron spectroscopy (XPS) of nominally d1 and n -doped d0 transition-metal oxides including NbO2,SrVO3, and LaTiO3 (nominally d1), as well as n -doped SrTiO3 (nominally d0). In the case of single phase d1 oxides, we find that the XPS spectra (specifically photoelectrons from Nb 3 d , V 2 p , Ti 2 p core levels) all display at least two, and sometimes three distinct components, which can be consistently identified as d0,d1, and d2 oxidation states (with decreasing order in binding energy). Electron doping increases the d2 component but decreases the d0 component, whereas hole doping reverses this trend; a single d1 peak is never observed, and the d0 peak is always present even in phase-pure samples. In the case of n -doped SrTiO3, the d1 component appears as a weak shoulder with respect to the main d0 peak. We argue that these multiple peaks should be understood as being due to the final-state effect and are intrinsic to the materials. Their presence does not necessarily imply the existence of spatially localized ions of different oxidation states nor of separate phases. A simple model is provided to illustrate this interpretation, and several experiments are discussed accordingly. The key parameter to determine the relative importance between the initial-state and final-state effects is also pointed out.

  8. Polarization induced doped transistor

    SciTech Connect

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  9. Efficient and Air-Stable Mixed-Cation Lead Mixed-Halide Perovskite Solar Cells with n-Doped Organic Electron Extraction Layers.

    PubMed

    Wang, Zhiping; McMeekin, David P; Sakai, Nobuya; van Reenen, Stephan; Wojciechowski, Konrad; Patel, Jay B; Johnston, Michael B; Snaith, Henry J

    2017-02-01

    Air-stable doping of the n-type fullerene layer in an n-i-p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH2 )2 )0.83 Cs0.17 Pb(I0.6 Br0.4 )3 perovskite as the photoactive layer, glass-glass laminated devices are reported, which sustain 80% of their "post burn-in" efficiency over 3400 h under full sun illumination in ambient conditions. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Insulating-layer formation of metallic LaNiO{sub 3} on Nb-doped SrTiO{sub 3} substrate

    SciTech Connect

    Yoo, Hyang Keun; Kim, Hyeong-Do Sohn, Chang Hee; Sinn, Soobin; Oh, Ji Seop; Kuo, Cheng-Tai; Noh, Tae Won; Chang, Young Jun; Moreschini, Luca; Bostwick, Aaron; Rotenberg, Eli

    2015-03-23

    We investigated the electronic structures of strongly correlated metallic LaNiO{sub 3} (LNO) and semiconducting Nb-doped SrTiO{sub 3} (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO{sub 3} and LaAlO{sub 3}, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.

  11. Insulating-layer formation of metallic LaNiO3 on Nb-doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Yoo, Hyang Keun; Chang, Young Jun; Moreschini, Luca; Kim, Hyeong-Do; Sohn, Chang Hee; Sinn, Soobin; Oh, Ji Seop; Kuo, Cheng-Tai; Bostwick, Aaron; Rotenberg, Eli; Noh, Tae Won

    2015-03-01

    We investigated the electronic structures of strongly correlated metallic LaNiO3 (LNO) and semiconducting Nb-doped SrTiO3 (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO3 and LaAlO3, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.

  12. Final Report for Award DE-SC0005403. Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping

    SciTech Connect

    Hertz, Joshua L.; Prasad, Ajay K.

    2015-09-06

    The enclosed document provides a final report to document the research performed at the University of Delaware under Grant DE-SC0005403: Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping. The ultimate goal of this project was to learn how to systematically strain the inter-atomic distance in thin ceramic films and how to use this newfound control to improve the ease by which oxygen ions can conduct through the films. Increasing the ionic conductivity of ceramics holds the promise of drastic improvements in the performance of solid oxide fuel cells, chemical sensors, gas permeation membranes, and related devices. Before this work, the experimental evidence advocating for strain-based techniques was often controversial and poorly characterized. Enabling much of this work was a new method to quickly create a very wide range of ceramic nanostructures that was established during the first phase of the project. Following this initial phase, we created a variety of promising nanostructured epitaxial films and multilayers with systematic variations in lattice mismatch and dopant content. Over the course of the work, a positive effect of tensile atomic strain on the oxygen conductivity was conclusively found using a few different forms of samples and experimental techniques. The samples were built by sputtering, an industrially scalable technique, and thus the technological implementation of these results may be economically feasible. Still, two other results consistently achieved over multiple efforts in this work give pause. The first of these results was that very specific, pristine surfaces upon which to build the nanostructures were strictly required in order to achieve measurable results. The second of these results was that compressively strained films with concomitant reductions in oxygen conductivity are much easier to obtain relative to tensile-strained films with increased conductivity.

  13. Plasmonic tuning of gold doped thin films for layers of photovoltaic devices

    SciTech Connect

    Gezgin, Serap Yiğit; Kepceoğlu, Abdullah; Bayır, Sercan; Nalbantoğlu, İzzet Ercan; Toprak, Ahmet; Kılıç, Hamdi Şükür

    2016-03-25

    In order to increase the absorption rates in solar cells, increasing research activities on the plasmonic nanostructures are followed carefully. The plasmonic nanoparticles provides an important enhancement in the trapping of photons in the active layer of the solar cells by means of interaction between incident light and plasmonic nanoparticles. In order to obtain this approach, under of 5×10{sup −4} mbar and 1×10{sup −2} mbar ambient argon gas pressure, gold thin film was deposited on the silicon substrate by applying PLD system. The morphology of thin films obtained was investigated by AFM and SEM considering the effect of Ar gas pressure on the plasma plume. SPR peaks for Au nanoparticles deposited under 5×10{sup −4} mbar and 1×10{sup −2} mbar Ar gas pressure were observed at 756 nm and 658 nm wavelengths respectively. It has been stated that the SPR peak in the infrared is depend on the near field interaction between Au nanoparticles. Furthermore, when the pressure is increased to 1×10{sup −2} mbar Ar, it has been observed that the SPR peak for thin film is shifted towards to shorter wavelengths, and it has also been observed that the intensity of absorption peak is decreased.

  14. Characterization of MFIS Structure with Dy-Doped ZrO2 Buffer Layer

    NASA Astrophysics Data System (ADS)

    Im, J. H.; Ah, G. Z.; Han, D. H.; Park, B. E.

    2011-12-01

    To evaluate the feasibility of DZO thin film as an insulating buffer layer for ferroelectric gate field effect transistors (Fe-FETs) with a metal-ferroelectric-insulator-semiconductor (MFIS) structure, we fabricated DZO/Si and BLT/DZO/Si structures by a sol-gel method. Equivalent oxide thickness (EOT) values of the DZO thin films were about 12.4nm, 11.9nm, 11.2nm and 11.1 nm for 650 °C, 700 °C 750 °C, and 800 °C,, respectively. Hysteresis was observed in all capacitance-voltage (C-V) curves of the DZO/Si structures, but hysteresis of the 750-°C-annealed film was negligible. The leakage current densities of the DZO thin films on Si showed the good characteristics regardless of the annealing temperature variations. The C-V characteristics of Au/300-nm-thick BLT/750-°C-annealed DZO/Si structure showed clockwise hysteresis loops, and the memory window width increased as the bias voltage increased. The maximum value of the memory window width was about 1.9 V at ±7 V.

  15. Antiferromagnetic long-range spin ordering in Fe- and NiF e2 -doped BaTi O3 multiferroic layers

    NASA Astrophysics Data System (ADS)

    Barbier, A.; Aghavnian, T.; Badjeck, V.; Mocuta, C.; Stanescu, D.; Magnan, H.; Rountree, C. L.; Belkhou, R.; Ohresser, P.; Jedrecy, N.

    2015-01-01

    We report on the Fe doping and on the comparative Ni-Fe codoping with composition close to NiF e2 of fully oxidized BaTi O3 layers (˜20 nm) elaborated by atomic oxygen plasma assisted molecular beam epitaxy; specifically any role of oxygen vacancies can be excluded in our films. Additionally to the classical in situ laboratory tools, the films were thoroughly characterized by synchrotron radiation x-ray diffraction and x-ray absorption spectroscopy. For purely Fe-doped layers, the native tetragonal perovskite structure evolves rapidly toward cubiclike up to 5% doping level above which the crystalline order disappears. On the contrary, low codoping levels (˜5 %NiF e2 ) fairly improve the thin film crystalline structure and surface smoothness; high levels (˜27%) lead to more crystallographically disordered films, although the tetragonal structure is preserved. Synchrotron radiation magnetic dichroic measurements reveal that metal clustering does not occur, that the Fe valence evolves from Fe2 + for low Fe doping levels to Fe3 + for high doping levels, and that the introduction of Ni favors the occurrence of the Fe2 + valence in the films. For the lower codoping levels it seems that Fe2 + substitutes Ba2 +, whereas Ni2 + always substitutes Ti4 +. Ferromagnetic long-range ordering can be excluded with great sensitivity in all samples as deduced from our x-ray magnetic absorption circular dichroic measurements. On the contrary, our linear dichroic x-ray absorption results support antiferromagnetic long-range ordering while piezoforce microscopy gives evidence of a robust ferroelectric long-range ordering showing that our films are excellent candidates for magnetic exchange coupled multiferroic applications.

  16. Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure

    NASA Astrophysics Data System (ADS)

    Yasuda, Arata; Takahashi, Yatsuhiro; Suto, Ken; Nishizawa, Jun-ichi

    2017-07-01

    We propose the use of heavily impurity-doped Pb1-xSnxTe/PbTe epitaxial layers grown via the temperature difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE) for the preparation of IV-VI compounds for mid- to far-infrared optical device applications. A flat surface morphology and the distribution of a constant Sn concentration for 0.05 ≤ x ≤ 0.33 were observed in the epitaxial layers using electron-probe microanalysis. The segregation coefficient of Sn in Pb1-xSnxTe grown via TDM-CVP LPE (Tg = 640 °C) was xSSn?xLSn = 0.28. The appearance of the Fermi level pinning and persistent photoconductivity effects in In-doped PbSnTe were also proposed; we estimated that the activation energies of these processes were 2.8 and 39.7 meV, respectively, based on the In-doped Pb1-xSnxTe carrier profile as a function of ambient temperature. In Hall mobility measurements, Sn was assumed to be a main scattering center in the Pb1-xSnxTe epitaxial crystals. The impurity effect was also observed in Pb1-xSnxTe epitaxial growth, similar to the effects observed for Tl-doped PbTe bulk crystals. We concluded that the heavily doped Pb1-xSnxTe crystals grown via TDM-CVP LPE can be used to fabricate high-performance mid- to far-infrared optical devices.

  17. A Scanning electron microscopic evaluation of intracanal smear layer removal by two different final irrigation activation systems

    PubMed Central

    Dua, Deepti; Dua, Ankur; Uppin, Veerendra M.

    2014-01-01

    Aim: The aim of this study was to compare smear layer removal at apical 1 mm level after final irrigation activation with an EndoVac system and Max-I probe. Materials and Methods: Fifty freshly extracted maxillary central incisors were randomly divided into two groups after completing cleaning and shaping with ProTaper rotary files. In one group, final irrigation was performed with an EndoVac system while in the other group final irrigation was performed with a 30 gauge Max-I probe. 3% sodium hypochlorite and 17% ethylenediaminetetracetic acid were used as final irrigants in all teeth. After instrumentation and irrigation, the teeth were sectioned longitudinally into buccal and palatal halves and viewed under a scanning electron microscope for evaluation of the smear layer. Statistical analysis was performed using the Kruskal Wallis and Mann-Whitney U tests. Results: The EndoVac group showed significantly better smear layer removal compared with the Max-I probe at the apical 1 mm level. Conclusion: An apical negative pressure system (EndoVac) results in better debridement at apical 1 mm when compared with side-vented closed ended needle irrigation (Max-I probe). PMID:24808693

  18. Interface Structures between Polymer Substrates and Fluorescent Dye-Doped Polymer Layers Formed by Vaporization in Vacuum

    NASA Astrophysics Data System (ADS)

    Mizokuro, Toshiko; Mochizuki, Hiroyuki; Mo, Xiaoliang; Tanigaki, Nobutaka; Hiraga, Takashi

    2005-01-01

    We have developed a simple vacuum process, termed the “vapor transportation method,” to dope low-molecular-weight molecules into polymer molds by vaporization of the molecules in a vacuum. In this study, we fabricated interfacial structures with a concentration gradient, between polystyrene (PS) substrates and dye-doped PS regions. PS was used to prepare cylindrical molds and molds surrounded by quartz cells. Fluorescent dyes, 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)4H-pyran (DCM), were doped into the cylindrical molds and into the molds surrounded by quartz cells from 110 to 160°C. To confirm the DCM doping of PS, UV-vis and fluorescent spectra were measured. To confirm the interfacial structures of the doped dyes, the dye-doped PS molds were examined by optical microscopy, transmission Fourier transform infrared (FT-IR) microscopy, and microspectrophotometry. The intensity profiles of DCM fluorescence from the DCM-doped molds surrounded by quartz cells by microspectrophotometry, show that, as doping temperature increases, interfacial structures had an increase in concentration gradient, in agreement with the results from optical microscopy and transmission FT-IR microscopy.

  19. Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jung, Sang Hyun; Kim, Chang Zoo; Kim, Youngjo; Jun, Dong Hwan; Kang, Ho Kwan; Kim, Hogyoung

    2016-03-01

    Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping. Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping. These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.

  20. Acoustic modal analysis and control in w-shaped triple-layer optical fibers with highly-germanium-doped core and F-doped inner cladding.

    PubMed

    Zou, Weiwen; He, Zuyuan; Hotate, Kazuo

    2008-07-07

    The numerical study of acoustic modal properties in w-shaped optical fibers with high-delta germanium-doped core and F-doped inner cladding (F-HDF) is demonstrated. The cutoff conditions of acoustic modes in the F-HDF show opposite behaviors in contrast with those of optical ones because F-doped inner cladding contributes differently to acoustic and optical waveguides. The acoustic dispersion characteristics vary to a great extent with respect to the location of the acoustic modes in the fiber's core or in the fiber's inner cladding. The resonance frequency spacing between neighboring acoustic modes is theoretically and experimentally found to have a quadratic relation to the core's germanium concentration. We also investigate the critical conditions to move high-order acoustic modes into the F-doped inner cladding and validate the optimal feasibility of employing L(01) and L(03) acoustic modes to fiber-optic Brillouin-based discriminative sensing of strain and temperature.

  1. Inverted organic solar cells based on Cd-doped TiO2 as an electron extraction layer

    NASA Astrophysics Data System (ADS)

    Ranjitha, A.; Muthukumarasamy, N.; Thambidurai, M.; Velauthapillai, Dhayalan; Madhan Kumar, A.; Gasem, Zuhair M.

    2014-10-01

    Nanocrystalline Cd-doped TiO2 thin films have been prepared by sol-gel method. X-ray diffraction analysis reveals that TiO2 and Cd-doped TiO2 nanocrystalline thin films are of anatase phase. The average grain size of TiO2 and Cd-doped TiO2 nanocrystalline thin films was found to lie in the range of 15-18 nm. Solar cells have been fabricated with a device structure of ITO/Cd-doped TiO2/P3HT:PC71BM/MoO3/Al configuration. The power conversion efficiency of the inverted organic solar cell with Cd-doped TiO2 is 3.06% and is higher than that of TiO2 based organic solar cell (2.64%).

  2. Highly doped silicon nanowires by monolayer doping.

    PubMed

    Veerbeek, Janneke; Ye, Liang; Vijselaar, Wouter; Kudernac, Tibor; van der Wiel, Wilfred G; Huskens, Jurriaan

    2017-02-23

    Controlling the doping concentration of silicon nanostructures is challenging. Here, we investigated three different monolayer doping techniques to obtain silicon nanowires with a high doping dose. These routes were based on conventional monolayer doping, starting from covalently bound dopant-containing molecules, or on monolayer contact doping, in which a source substrate coated with a monolayer of a carborane silane was the dopant source. As a third route, both techniques were combined to retain the benefits of conformal monolayer formation and the use of an external capping layer. These routes were used for doping fragile porous nanowires fabricated by metal-assisted chemical etching. Differences in porosity were used to tune the total doping dose inside the nanowires, as measured by X-ray photoelectron spectroscopy and secondary ion mass spectrometry measurements. The higher the porosity, the higher was the surface available for dopant-containing molecules, which in turn led to a higher doping dose. Slightly porous nanowires could be doped via all three routes, which resulted in highly doped nanowires with (projected areal) doping doses of 10(14)-10(15) boron atoms per cm(2) compared to 10(12) atoms per cm(2) for a non-porous planar sample. Highly porous nanowires were not compatible with the conventional monolayer doping technique, but monolayer contact doping and the combined route resulted for these highly porous nanowires in tremendously high doping doses up to 10(17) boron atoms per cm(2).

  3. Rapid Melt and Resolidification of Surface Layers Using Intense, Pulsed Ion Beams Final Report

    SciTech Connect

    Renk, Timothy J. Turman, Bob Senft, Donna Sorensen, Neil R. Stinnett, Regan Greenly, John B. Thompson, Michael O. Buchheit, Rudolph G.

    1998-10-02

    The emerging technology of pulsed intense ion beams has been shown to lead to improvements in surface characteristics such as hardness and wear resistance, as well as mechanical smoothing. We report hereon the use of this technology to systematically study improvements to three types of metal alloys - aluminum, iron, and titanium. Ion beam tieatment produces a rapid melt and resolidification (RMR) of the surface layer. In the case of a predeposited thin-fihn layer, the beam mixes this layer into the substrate, Ieading to improvements that can exceed those produced by treatment of the alloy alone, In either case, RMR results in both crystal refinement and metastable state formation in the treated surface layer not accessible by conventional alloy production. Although more characterization is needed, we have begun the process of relating these microstructural changes to the surface improvements we discuss in this report.

  4. Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2.

    PubMed

    Vasu, K; Sreedhara, M B; Ghatak, J; Rao, C N R

    2016-03-01

    Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [1̅10]TiO2//[011̅0]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2.

  5. Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer.

    PubMed

    Cao, Sheng; Zheng, Jinju; Zhao, Jialong; Yang, Zuobao; Li, Chengming; Guan, Xinwei; Yang, Weiyou; Shang, Minghui; Wu, Tom

    2017-05-10

    Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m(2) and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

  6. Hydroxyethyl cellulose doped with copper(II) phthalocyanine-tetrasulfonic acid tetrasodium salt as an effective dual functional hole-blocking layer for polymer light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Liang; Chen, Yun

    2017-07-01

    We report a doping method to improve the performance of solution-processed polymer light-emitting diodes (PLEDs). Doping 12 wt% copper(II) phthalocyanine-tetrasulfonated acid tetrasodium salt (TS-CuPc) into hydroxyethyl cellulose (HEC) as a dual functional hole-blocking layer (df-HBL) of multilayer PLED (glass/ITO/PEDOT:PSS/HY-PPV/TS-CuPc-doped HEC/LiF/Al) significantly enhanced maximum luminance, maximum current and power efficiency over that without the df-HBL (10,319 cd/m2, 2.98 cd/A and 1.24 lm/W) to (29,205 cd/m2, 13.27 cd/A and 9.56 lm/W). CV measurements reveal that HEC possesses a powerful hole-blocking capability. Topography and conductivity AFM images show that doping TS-CuPc increases the interfacial contact area and interfacial conductivity, which can overcome the insulating nature of HEC and thus further facilitate electron injection. Enhancements in device performance are attributed to the improved carrier balance and recombination in the presence of df-HBL, confirmed in electron-only and hole-only devices. Moreover, apparently raised open-circuit voltages provide further evidence that enhanced electron injection is indeed realized by the df-HBL. This study demonstrates an effective approach to develop highly efficient PLEDs.

  7. An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes.

    PubMed

    Fattah, N F A; Ng, H M; Mahipal, Y K; Numan, Arshid; Ramesh, S; Ramesh, K

    2016-06-06

    Solid polymer electrolyte (SPE) composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene) [P(VdF-HFP)] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl) imide [EMI-BTI] and graphene oxide (GO) was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC). The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP)-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD) and thermogravimetric analysis (TGA) studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge-discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g(-1), which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

  8. An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes

    PubMed Central

    Fattah, N. F. A.; Ng, H. M.; Mahipal, Y. K.; Numan, Arshid; Ramesh, S.; Ramesh, K.

    2016-01-01

    Solid polymer electrolyte (SPE) composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene) [P(VdF-HFP)] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl) imide [EMI-BTI] and graphene oxide (GO) was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC). The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP)-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD) and thermogravimetric analysis (TGA) studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge–discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g−1, which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application. PMID:28773573

  9. Cobalt Ferrite Bearing Nitrogen-Doped Reduced Graphene Oxide Layers Spatially Separated with Microporous Carbon as Efficient Oxygen Reduction Electrocatalyst.

    PubMed

    Kashyap, Varchaswal; Singh, Santosh K; Kurungot, Sreekumar

    2016-08-17

    The present work discloses how high-quality dispersion of fine particles of cobalt ferrite (CF) could be attained on nitrogen-doped reduced graphene oxide (CF/N-rGO) and how this material in association with a microporous carbon phase could deliver significantly enhanced activity toward electrochemical oxygen reduction reaction (ORR). Our study indicates that the microporous carbon phase plays a critical role in spatially separating the layers of CF/N-rGO and in creating a favorable atmosphere to ensure the seamless distribution of the reactants to the active sites located on CF/N-rGO. In terms of the ORR current density, the heat-treated hybrid catalyst at 150 °C (CF/N-rGO-150) is found to be clearly outperforming (7.4 ± 0.5 mA/cm(2)) the state-of-the-art 20 wt % Pt-supported carbon catalyst (PtC) (5.4 ± 0.5 mA/cm(2)). The mass activity and stability of CF-N-rGO-150 are distinctly superior to PtC even after 5000 electrochemical cycles. As a realistic system level exploration of the catalyst, testing of a primary zinc-air battery could be demonstrated using CF/N-rGO-150 as the cathode catalyst. The battery is giving a galvanostatic discharge time of 15 h at a discharge current density of 20 mA/cm(2) and a specific capacity of ∼630 mAh g(-1) in 6 M KOH by using a Zn foil as the anode. Distinctly, the battery performance of this system is found to be superior to that of PtC in less concentrated KOH solution as the electrolyte.

  10. Eu{sup 3+} luminescence enhancement by intercalation of benzenepolycarboxylic guests into Eu{sup 3+}-doped layered gadolinium hydroxide

    SciTech Connect

    Gu, Qingyang; Pan, Guohua; Ma, Teng; Huang, Gailing; Sun, Genban; Ma, Shulan; Yang, Xiaojing

    2014-05-01

    Graphical abstract: Two benzenepolycarboxylic sensitizers, 1,3,5-benzenetricarboxylic acid (BTA) and 1,2,4,5-benzenetetracarboxylic acid (BA), were intercalated into NO{sub 3}–LGdH:Eu, in which different structures of the compounds resulted in varied arrangement in the gallery. The two organic compounds especially BA markedly enhanced the red luminescence of Eu{sup 3+} due to efficient energy transfer between the organic guests and Eu{sup 3+} centers. - Highlights: • We report the intercalation of benzenepolycarboxylic organic sensitizers into LRH. • We study the intercalation structure and the arrangement of the interlayer guests. • The two organic compounds can markedly enhance the luminescence of Eu{sup 3+}. • There exists efficient energy transfer between organic guests and Eu{sup 3+} centers. • This material opens a route for fabricating new multifunctional luminescent materials. - Abstract: Two benzenepolycarboxylic organic sensitizers, 1,3,5-benzenetricarboxylic acid (BTA) and 1,2,4,5-benzenetetracarboxylic acid (BA), were intercalated into the gallery of NO{sub 3}{sup −} type Eu{sup 3+}-doped layered gadolinium hydroxide (NO{sub 3}–LGdH:Eu). CHN analysis, FTIR, and SEM were employed to characterize the intercalation structures of the as-prepared organic/inorganic hybrids. The area per unit charge (S{sub charge}) was used to explain the intercalation structure and the arrangement of the interlayer guests. Different structures of the two organic compounds resulted in varied arrangement of guests. Photoluminescence studies indicated that both of the two organic compounds especially BA markedly enhanced the red luminescence of Eu{sup 3+} due to efficient energy transfer between the organic guests and Eu{sup 3+} centers.

  11. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NASA Astrophysics Data System (ADS)

    Macco, B.; Deligiannis, D.; Smit, S.; van Swaaij, R. A. C. M. M.; Zeman, M.; Kessels, W. M. M.

    2014-12-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by atomic layer deposition (ALD). It is shown that the ALD process, as opposed to sputtering, does not impair the chemical passivation. However, the field-effect passivation is reduced by the ZnO:Al. The resulting decrease in low injection-level lifetime can be tuned by changing the ZnO:Al doping level (carrier density = 7 × 1019-7 × 1020 cm-3), which is explained by a change in the TCO workfunction. Additionally, it is shown that a ˜10-15 nm ALD ZnO:Al layer is sufficient to mitigate damage to the a-Si:H by subsequent sputtering, which is correlated to ALD film closure at this thickness.

  12. Bottom-Up Fabrication of Single-Layered Nitrogen-Doped Graphene Quantum Dots through Intermolecular Carbonization Arrayed in a 2D Plane.

    PubMed

    Li, Rui; Liu, Yousong; Li, Zhaoqian; Shen, Jinpeng; Yang, Yuntao; Cui, Xudong; Yang, Guangcheng

    2016-01-04

    A single-layered intermolecular carbonization method was applied to synthesize single-layered nitrogen-doped graphene quantum dots (N-GQDs) by using 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) as the only precursor. In this method, the gas produced in the pyrolysis of TATB assists with speeding up of the reactions and expanding the layered distance, so that it facilitates the formation of single-layered N-GQDs (about 80 %). The symmetric intermolecular carbonizations of TATB arrayed in a plane and six nitrogen-containing groups ensure small, uniform sizes (2-5 nm) of the resulting products, and provide high nitrogen-doping concentrations (N/C atomic ratio ca. 10.6 %). In addition to release of the produced gas, TATB is almost completely converted into aggregated N-GQDs; thus, relatively higher production rates are possible with this approach. Investigations show that the as-produced N-GQDs have superior fluorescent characteristics; high water solubility, biocompatibility, and low toxicity; and are ready for potential applications, such as biomedical imaging and optoelectronic devices.

  13. Structural Properties of Ultrasonically Sprayed Al-Doped ZnO (AZO) Thin Films: Effect of ZnO Buffer Layer on AZO

    NASA Astrophysics Data System (ADS)

    Babu, B. J.; Velumani, S.; Arenas-Alatorre, J.; Kassiba, A.; Chavez, Jose; Park, Hyeonsik; Hussain, Shahzada Qamar; Yi, Junsin; Asomoza, R.

    2015-02-01

    Transparent aluminium-doped ZnO (AZO)-conducting oxide films were deposited on a glass substrate, using an ultrasonic spray pyrolysis (USP) system at 475°C. We investigated the effects of the Al/Zn atomic ratios on the structural properties of the AZO films. All the deposited AZO thin films presented hexagonal wurtzite structure. As Al doping increased in the film, the preferential orientation switched from [002] to [101], and crystallite sizes varied from 31.90 nm to 34.5 nm. Field emission scanning electron microscopy showed a change in the surface morphology of the AZO films with respect to the Al/Zn ratio, and secondary ion mass spectroscopy showed that the amount of Al incorporated into the films was proportional to the concentration of the starting solution. A fast Fourier transform of the AZO film measurements confirmed the presence of (100), (102), and (200) reflections, corresponding to a wurtzite structure of the AZO thin films. The plane corresponding to AZO was simulated, and matched the experimental pattern obtained from high-resolution transmission electron microscopy. An un-doped ZnO layer was deposited onto the AZO film using USP at 400°C, and a bilayer of AZO/ZnO was annealed in vacuum for 20 min at 350°C. The resistivity of these bilayer films was lower than that of a single-layered AZO film, and it further decreased by vacuum annealing.

  14. Photocatalytic performance of Sn-doped TiO2 nanostructured mono and double layer thin films for Malachite Green dye degradation under UV and vis-lights.

    PubMed

    Sayilkan, F; Asiltürk, M; Tatar, P; Kiraz, N; Arpaç, E; Sayilkan, H

    2007-06-01

    Nanostructure Sn(4+)-doped TiO(2) based mono and double layer thin films, contain 50% solid ratio of TiO(2) in coating have been prepared on glass surfaces by spin-coating technique. Their photocatalytic performances were tested for degradation of Malachite Green dye in solution under UV and vis irradiation. Sn(4+)-doped nano-TiO(2) particle a doping ratio of about 5[Sn(4+)/Ti(OBu(n))(4); mol/mol%] has been synthesized by hydrotermal process at 225 degrees C. The structure, surface and optical properties of the thin films and/or the particles have been investigated by XRD, BET and UV/vis/NIR techniques. The results showed that the double layer coated glass surfaces have a very high photocatalytic performance than the other one under UV and vis lights. The results also proved that the hydrothermally synthesized nano-TiO(2) particles are fully anatase crystalline form and are easily dispersed in water. The results also reveal that the coated surfaces have hydrophilic property.

  15. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    SciTech Connect

    Kalkofen, Bodo Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P.; Garke, Bernd; Lisker, Marco; Gargouri, Hassan

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  16. Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition.

    PubMed

    Lee, Ju Ho; Lee, Jae-Won; Hwang, Sooyeon; Kim, Sang Yun; Cho, Hyung Koun; Lee, Jeong Yong; Park, Jin-Seong

    2012-07-01

    Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.

  17. Niobium Doping Effects on TiO2 Mesoscopic Electron Transport Layer-Based Perovskite Solar Cells.

    PubMed

    Kim, Dong Hoe; Han, Gill Sang; Seong, Won Mo; Lee, Jin-Wook; Kim, Byeong Jo; Park, Nam-Gyu; Hong, Kug Sun; Lee, Sangwook; Jung, Hyun Suk

    2015-07-20

    Perovskite solar cells (PSCs) are the most promising candidates as next-generation solar energy conversion systems. To design a highly efficient PSC, understanding electronic properties of mesoporous metal oxides is essential. Herein, we explore the effect of Nb doping of TiO2 on electronic structure and photovoltaic properties of PSCs. Light Nb doping (0.5 and 1.0 at %) increased the optical band gap slightly, but heavy doping (5.0 at %) distinctively decreased it. The relative Fermi level position of the conduction band is similar for the lightly Nb-doped TiO2 (NTO) and the undoped TiO2 whereas that of the heavy doped NTO decreased by as much as ∼0.3 eV. The lightly doped NTO-based PSCs exhibit 10 % higher efficiency than PSCs based on undoped TiO2 (from 12.2 % to 13.4 %) and 52 % higher than the PSCs utilizing heavy doped NTO (from 8.8 % to 13.4 %), which is attributed to fast electron injection/transport and preserved electron lifetime, verified by transient photocurrent decay and impedance studies.

  18. Uniform mixing of antiferromagnetism and high-temperature superconductivity in electron-doped layers of four-layered Ba(2)Ca(3)Cu(4)O(8)F(2): a new phenomenon in an electron underdoped regime.

    PubMed

    Shimizu, S; Mukuda, H; Kitaoka, Y; Iyo, A; Tanaka, Y; Kodama, Y; Tokiwa, K; Watanabe, T

    2007-06-22

    We report (63,65)Cu- and (19)F-NMR studies on a four-layered high-temperature superconductor Ba(2)Ca(3)Cu(4)O(8)F(2)((0234F(2.0)) with apical fluorine (F(-1)), an undoped 55 K superconductor with a nominal Cu(2+) valence on average. We reveal that this compound exhibits the antiferromagnetism (AFM) with a Néel temperature T(N)=100 K despite being a T(c)=55 K superconductor. Through a comparison with a related trilayered cuprate Ba(2)Ca(3)Cu(4)O(8)F(2)(0233F(2.0)), it is demonstrated that electrons are transferred from the inner plane (IP) to the outer plane (OP) in 0234F(2.0) and 0223F(2.0), confirming the self-doped high-temperature superconductivity (HTSC) having electron and hole doping in a single compound. Remarkably, uniform mixing of AFM and HTSC takes place in both the electron-doped OPs and the hole-doped IPs in 0234F(2.0).

  19. Uniform Mixing of Antiferromagnetism and High-Temperature Superconductivity in Electron-Doped Layers of Four-Layered Ba2Ca3Cu4O8F2: A New Phenomenon in an Electron Underdoped Regime

    NASA Astrophysics Data System (ADS)

    Shimizu, S.; Mukuda, H.; Kitaoka, Y.; Iyo, A.; Tanaka, Y.; Kodama, Y.; Tokiwa, K.; Watanabe, T.

    2007-06-01

    We report Cu63,65- and F19-NMR studies on a four-layered high-temperature superconductor Ba2Ca3Cu4O8F2((0234F(2.0)) with apical fluorine (F-1), an undoped 55 K superconductor with a nominal Cu2+ valence on average. We reveal that this compound exhibits the antiferromagnetism (AFM) with a Néel temperature TN=100K despite being a Tc=55 K superconductor. Through a comparison with a related trilayered cuprate Ba2Ca2Cu3O6F2(0233F(2.0)), it is demonstrated that electrons are transferred from the inner plane (IP) to the outer plane (OP) in 0234F(2.0) and 0223F(2.0), confirming the self-doped high-temperature superconductivity (HTSC) having electron and hole doping in a single compound. Remarkably, uniform mixing of AFM and HTSC takes place in both the electron-doped OPs and the hole-doped IPs in 0234F(2.0).

  20. Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

    SciTech Connect

    Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo; Kim, Moojin; Lee, Sung-Nam

    2016-10-15

    Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

  1. Low-Cost Protective Layer Coatings on Thermal Barrier Coatings via CCVD. Final Report

    SciTech Connect

    Hendrick, Michelle

    2003-09-18

    MicroCoating Technologies, Inc., investigated the use of the Combustion Chemical Vapor Deposition (CCVD) process to deposit oxygen or sintering barrier coatings for thermal barrier coating (TBC) applications. In addition, it looked at the use of its nanopowders by the NanoSpray process for developing smoothing layers on TBCs. Testing and analysis of coated substrates included heat treatments, scanning electron microscopy, x-ray diffraction and profilometry. Coatings on TBC-coated superalloy coupons were tested by an outside collaborator. Results from the investigations indicated that the thin film coatings were not well-suited as barrier layers on the rough bond coat or TBC. Subsequent investigations considered smoothing layers on the TBC, as suggested by the collaborator, using nanopowder-based coatings. Smoothing of substrate surfaces by 50% was observed by profilometry.

  2. Radiographic layer counter for composites. Final technical report, Jun 87-Feb 88

    SciTech Connect

    Larsen, R.E.

    1991-06-01

    The Army helmet is a composite of layers of resin-bonded Kevlar. Inadvertent omission of layers or undetected shifting of layers during molding processes can reduce the effective number of fibers in some helmet areas and impair their strength properties. A nondestructive method of 100% testing of the helmets, more effective than random sampling by ballistic testing, is needed. This six-month study evaluated the feasibility of using relatively low-energy radioisotopes to gauge the uniformity of Kelvar helmets. The potential for constructing a portable detection unit was also assessed. A laboratory radiometric test system was used to evaluate resin-bonded Kevlar samples, as well as actual Army helmets from current suppliers. It was found that the radiometric test system has the capacity to reflect the general condition of fabricated Kevlar helmets.

  3. Synthesis and characterization of UV-treated Fe-doped bismuth lanthanum titanate-doped TiO2 layers in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Song, Myoung Geun; Bark, Chung Wung

    2016-06-01

    Dye-sensitized solar cells (DSSCs) based on titanium dioxide (TiO2) have been extensively studied because they constitute promising low-cost alternatives to their conventional semiconductor-based counterparts. However, much of the effort aimed at achieving high conversion efficiencies has focused on dye and liquid electrolytes. In this work, we report the photovoltaic characteristics of DSSCs fabricated by mixing TiO2 with Fe-doped bismuth lanthanum titanate (Fe-BLT). These nanosized Fe-BLT powders were prepared by using a high-energy ball-milling process. In addition, we used a UV radiation-ozone (UV-O3) treatment to change the surface wettability of TiO2 from hydrophobic to hydrophilic and thereby prevented the easy separation of the Fe-BLT-mixed TiO2 from the fluorine-doped tin-oxide (FTO) coating glass.

  4. Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

    NASA Astrophysics Data System (ADS)

    Jung, Hyung Hwan; Kwon, Jung-Dae; Lee, Sunghun; Su Kim, Chang; Nam, Kee-Seok; Jeong, Yongsoo; Chung, Kwun-Bum; Yoon Ryu, Seung; Ocak, Tülay; Eray, Aynur; Kim, Dong-Ho; Park, Sung-Gyu

    2013-08-01

    This work describes the preparation of a doped layer-free hydrogenated amorphous silicon (a-Si:H) thin film solar cell consisting of a vanadium pentoxide (V2O5-x) window layer, an intrinsic a-Si:H absorber layer, and a lithium fluoride (LiF)/aluminum (Al) back electrode. The large difference between the work functions of the V2O5-x layer and the LiF/Al electrode permitted photogenerated carriers in the i-a-Si:H absorber layer to be effectively separated and collected. The effects of the V2O5-x layer thickness and the oxidation states on the photovoltaic performance were investigated in detail. X-ray photoelectron spectroscopy analysis confirmed that the major species of the sputtered V2O5-x thin films were V5+ and V4+. Optimization of the V2O5-x window layer yielded a power conversion efficiency of 7.04%, which was comparable to the power conversion efficiency of a typical a-Si:H solar cell (7.09%).

  5. Intermediate-Temperature Solid-Oxide Fuel Cells with a Gadolinium-Doped Ceria Anodic Functional Layer Deposited via Radio-Frequency Sputtering.

    PubMed

    Tanveer, Waqas Hassan; Ji, Sanghoon; Yu, Wonjong; Cho, Gu Young; Lee, Yoon Ho; Cha, Suk Won

    2015-11-01

    We investigated the effects of the insertion of a gadolinium-doped ceria (GDC) anodic functional layer (AFL) on the electrochemical performance of intermediate-temperature solid-oxide fuel cells (SOFCs). Fully stabilized yttria-stabilized zirconia (YSZ) was used as an oxygen-ion-conducting and support material. Nickel-Samaria-doped ceriathin film was used as an anode material, while screen-printed lanthanum strontium magnetite served as a cathode material. In order to enhance the interfacial reaction on the anode side, a GDC-AFL with a thickness of about 140 nm, deposited via radio-frequency sputtering, was inserted into the anode-electrolyte interface. SOFCs with and without a GDC-AFL were electrochemically characterized. In an intermediate temperature range of about 700 - 800 degrees C, the application of the GDC-AFL led to an increase in the peak power density of approximately 16%.

  6. The pressure dependence of Tc in the infinite-layer electron-doped compound Sr 0.84Nd 0.16CuO 2

    NASA Astrophysics Data System (ADS)

    Wooten, C. L.; Beom-hoan, O.; Markert, J. T.; Smith, M. G.; Manthiram, A.; Zhou, J.; Goodenough, J. B.

    1992-03-01

    We report the effect of nearly hydrostatic pressure in the range 0-20 kbar on the resistively determined superconducting transition temperature Tc of the recently discovered infinite-layer electron-doped copper-oxide compound Sr 0.84ND 0.16CuO 2. In contrast to other electron-doped copper oxides, we observe a positive and appreciable change in Tc with pressure with value {dT c}/{dP }=+0.06±0.02 K/kbar. Thus the sign and magnitude of {dT c}/{dP} are not dominated by the carrier type; in this compound, we suggest they are determined by a pressure-induced enhancement of the interlayer coupling.

  7. Doping dependence of the coupling of electrons to bosonic modes in the single-layer high-temperature Bi2Sr2CuO6 superconductor

    SciTech Connect

    Meevasana, W.

    2010-06-02

    A recent highlight in the study of high-Tc superconductors is the observation of band renormalization or self-energy effects on the quasiparticles. This is seen in the form of kinks in the quasiparticle dispersions as measured by photoemission and interpreted as signatures of collective bosonic modes coupling to the electrons. Here we compare for the first time the self-energies in an optimally doped and strongly overdoped, nonsuperconducting single-layer Bi-cuprate (Bi{sub 2}Sr{sub 2}CuO{sub 6}). In addition to the appearance of a strong overall weakening, we also find that the weight of the self-energy in the overdoped system shifts to higher energies. We present evidence that this is related to a change in the coupling to c-axis phonons due to the rapid change of the c-axis screening in this doping range.

  8. One-step synthesis of layered yttrium hydroxides in immiscible liquid-liquid systems: Intercalation of sterically-bulky hydrophobic organic anions and doping of europium ions

    NASA Astrophysics Data System (ADS)

    Watanabe, Mebae; Fujihara, Shinobu

    2014-02-01

    Inorganic-organic layered rare-earth compounds were synthesized on the basis of a biphasic liquid-liquid system in one pot. Layered yttrium hydroxides (LYHs) were chosen as a host material for the intercalation of hydrophobic organic guest anions such as benzoate, sebacate, or laurate. In a typical synthesis, an organic phase dissolving carboxylic acid was placed in contact with an equal amount of an aqueous phase dissolving yttrium nitrate n-hydrate and urea. At elevated temperatures up to 80 °C, urea was hydrolyzed to release hydroxyl anions which were used to form yttrium hydroxide layers. LYHs were then precipitated with the intercalation of carboxylate anions delivered from the organic phase under the distribution law. The structure and the morphology of the LYHs could be modulated by the intercalated anions. Doped with Eu3+ ions, the LYHs exhibited red photoluminescence which was enhanced by the intercalated anions due to the antenna effect.

  9. Effect of mid-annealing process on the device characteristics of the TFT using Al-doped ZnO active channels prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Kim, Eom-Ji; Bak, Jun-Yong; Choi, Jeong-Seon; Yoon, Sung-Min

    2015-03-01

    A specified mid-annealing process, which is a thermal treatment in oxygen ambient right after an active layer deposition, was proposed for obtaining a sufficiently wide process window for the atomic layer deposition in order to realize a high performance Al-doped ZnO (AZO) thin-film transistors (TFTs). While the crystalline phases of the AZO thin films were not changed after the mid-annealing process, the electrical conductivities of the films experienced drastic changes owing to the significant reduction of oxygen vacancies during the mid-annealing process. The decrease in the electrical conductivity was more markedly observed for the AZO films prepared at higher deposition temperature. Top-gate-structured TFTs using the mid-annealed AZO active channel layers were fabricated and characterized. Sound on/off switching behaviors of TFTs were obtained at a wider range of deposition temperature. Additionally, the improvements in carrier mobility and negative bias stress stability were successfully confirmed.

  10. Spectral weight suppression near a metal-insulator transition in a double-layer electron-doped iridate

    NASA Astrophysics Data System (ADS)

    Affeldt, Gregory; Hogan, Tom; Smallwood, Christopher L.; Das, Tanmoy; Denlinger, Jonathan D.; Wilson, Stephen D.; Vishwanath, Ashvin; Lanzara, Alessandra

    2017-06-01

    The perovskite iridates Sr2IrO4 and Sr3Ir2O7 represent novel systems for exploring the electronic structure that is characteristic of Mott insulators upon carrier doping. Using angle-resolved photoemission spectroscopy (ARPES), we reveal a previously unobserved suppression of spectral weight near the Fermi level in the conduction band of very lightly electron-doped (Sr1-xLax) 3Ir2O7 followed by a loss of coherence at high temperature. The doping and temperature dependence of this suppression suggests a correspondence with the antiferromagnetic Mott state. These results connect (Sr1-xLax) 3Ir2O7 to other doped Mott insulators and add to the growing evidence of universal physics in these systems.

  11. Flowfield measurements in a separated and reattached flat plate turbulent boundary layer. Final report

    SciTech Connect

    Patrick, W.P.

    1987-03-01

    The separation and reattachment of a large-scale, two-dimensional turbulent boundary layer at low subsonic speed on a flat plate has been studied experimentally. The separation bubble was 55 cm long and had a maximum bubble thickness, measured to the height of the mean dividing streamline, of 17 cm, which was twice the thickness of the inlet boundary layer. A combination of laser velocimetry, hot-wire anemometry, pneumatic probing techniques, and flow visualization were used as diagnostics. Principal findings were that an outer inviscid rotational flow was defined which essentially convected over the blockage associated with the inner, viscously dominated bubble recirculation region. A strong backflow region in which the flow moved upstream 100 percent of the time was measured near the test surface over the central 35 percent of the bubble. A laminar backflow boundary layer having pseudo-turbulent characteristics including a log-linear velocity profile was generated under the highly turbulent backflow. Velocity profile shapes in the reversed flow region matched a previously developed universal backflow profile at the upstream edge of the separation region but not in the steady backflow region downstream. A smoke flow visualization movie and hot-film measurements revealed low frequency nonperiodic flapping at reattachment. However, forward flow fraction data at reattachment and mean velocity profiles in the redeveloping boundary layer downstream of reattachment correlated with backward-facing step data when the axial dimension was scaled by the distance from the maximum bubble thickness to reattachment.

  12. Enhancement of photoinduced electrical properties of Al-doped ZnO/BiFeO3 layered thin films prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Katayama, Takeshi; Sakamoto, Wataru; Yuitoo, Isamu; Takeuchi, Teruaki; Hayashi, Koichiro; Yogo, Toshinobu

    2015-10-01

    Polycrystalline BiFeO3 and Al-doped ZnO/BiFeO3 bilayered thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition. Their photoinduced electrical properties under blue light irradiation were characterized. The rapid on/off response of the photocurrent to light in unpoled BiFeO3 (BFO) and Al-doped ZnO/BiFeO3 (AZO/BFO) thin films was demonstrated. The AZO/BFO layered film exhibited an approximately triple-digit larger photocurrent in comparison with a BFO single-layer film. This is attributable to the photoexcited carrier generation effect at the interface between AZO (n-type) and BFO (p-type) films. Furthermore, in the AZO/BFO layered structure, the direction of the internal bias electric field caused by the space charge distribution in the unpoled BFO film is the same as that of the built-in electric field by forming a p-n junction of AZO and BFO layers. Photovoltaic properties were also improved by fabricating such a layered film. On the other hand, when the placement of BFO to AZO was reversed, the photoelectric current decreased to approximately one-tenth of that of the BFO single-layer film. In the BFO/AZO film, the internal electric field at the p-n junction between BFO and AZO is considered to have an orientation opposite to the self-bias field formed in the BFO film.

  13. Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications

    NASA Astrophysics Data System (ADS)

    Kim, Eom-Ji; Lee, Won-Ho; Yoon, Sung-Min

    2016-03-01

    We investigated the effects of the distance between incorporated Al layers on the characteristics of thin-film transistors (TFTs) using Al-doped ZnO (AZO) as the active channels. The intervals between the Al layers were controlled by designing the sequences of Al cycles during the atomic-layer deposition. Two configurations were designed as “scatter” or “focus”, in which the incorporated Al layers were dispersed to bottom and top sides or concentrated on the center region. Electrical conductivities of “scatter” and “focus” films were observed to be different. While the dispersed Al layers could work as dopants, a too-close interval between the Al layers suppressed carrier transport, even with the same incorporated Al amounts. These differences were reflected on the device characteristics. The TFT performance of the “scatter” device was better than that of the “focus” device. Consequently, adequately dispersed Al layers in the AZO channel are very important for improving device performance.

  14. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN{sub x} films by introducing phosphorous catalytic-doped layer

    SciTech Connect

    Thi, Trinh Cham Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2014-07-28

    We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

  15. A High-Lift Building Block Flow: Turbulent Boundary Layer Relaminarization A Final Report

    NASA Technical Reports Server (NTRS)

    Bourassa, Corey; Thomas, Flint O.; Nelson, Robert C.

    2000-01-01

    Experimental evidence exists which suggests turbulent boundary layer relaminarization may play an important role in the inverse Reynolds number effect in high-lift systems. An experimental investigation of turbulent boundary layer relaminarization has been undertaken at the University of Notre Dame's Hessert Center for Aerospace Research in cooperation with NASA Dryden Flight Research Center. A wind tunnel facility has been constructed at the Hessert Center and relaminarization achieved. Preliminary evidence suggests the current predictive tools available are inadequate at determining the onset of relaminarization. In addition, an in-flight relaminarization experiment for the NASA Dryden FTF-II has been designed to explore relaminarization at Mach and Reynolds numbers more typical of commercial high-lift systems.

  16. Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

    SciTech Connect

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge; Zhao, Yongbiao; Zhang, Hongmei

    2014-06-28

    By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thin non-doped orange emission layer in WOLEDs.

  17. Investigating the effect of capping layers on final thin film morphology after a dewetting process

    NASA Astrophysics Data System (ADS)

    White, Benjamin C.

    Nanoparticles on a substrate have numerous applications in nanotechnology, from enhancements to solar cell efficiency to improvements in carbon nanotube growth. Producing nanoparticles in a cheap fashion with some control over size and spacing is difficult to do, but desired. This work presents a novel method for altering the radius and pitch distributions of nickel and gold nanoparticles in a scalable fashion. The introduction of alumina capping layers to thin nickel films during a pulsed laser-induced dewetting process has yielded reductions in the mean and standard deviation of radii and pitch for dewet nanoparticles. Carbon nanotube mats grown on these samples show a much thicker mat for the capped case. The same capping layers have produced an opposite effect of increased nanoparticle size and spacing during a solid state dewetting process of a gold film. These results also show a decrease in the magnitude of the effect as the capping layer thickness increases. Since the subject of research interest for using these nanoparticles has shifted towards producing ordered arrays with size and spacing control, the uncertainty in the values of these distributions needs to be quantified for any form of meaningful comparison to be made between fabrication methods. Presented here is a first step in the uncertainty analysis of such samples via synthetic images producing error distributions.

  18. Layering

    NASA Image and Video Library

    2011-04-01

    At the bottom of this image from NASA Mars Odyssey is the cliff-face that is the sidewall of Ophir Chasma. Layering is easily visible in the upper cliff wall, with the thickness of the surface clearly visible.

  19. New Approach for High-Voltage Electrical Double-Layer Capacitors Using Vertical Graphene Nanowalls with and without Nitrogen Doping.

    PubMed

    Chi, Yu-Wen; Hu, Chi-Chang; Shen, Hsiao-Hsuan; Huang, Kun-Ping

    2016-09-14

    Integrating various devices to achieve high-performance energy storage systems to satisfy various demands in modern societies become more and more important. Electrical double-layer capacitors (EDLCs), one kind of the electrochemical capacitors, generally provide the merits of high charge-discharge rates, extremely long cycle life, and high efficiency in electricity capture/storage, leading to a desirable device of electricity management from portable electronics to hybrid vehicles or even smart grid application. However, the low cell voltage (2.5-2.7 V in organic liquid electrolytes) of EDLCs lacks the direct combination of Li-ion batteries (LIBs) and EDLCs for creating new functions in future applications without considering the issue of a relatively low energy density. Here we propose a guideline, "choosing a matching pair of electrode materials and electrolytes", to effectively extend the cell voltage of EDLCs according to three general strategies. Based on the new strategy proposed in this work, materials with an inert surface enable to tolerate a wider potential window in commercially available organic electrolytes in comparison with activated carbons (ACs). The binder-free, vertically grown graphene nanowalls (GNW) and nitrogen-doped GNW (NGNW) electrodes respectively provide good examples for extending the upper potential limit of a positive electrode of EDLCs from 0.1 to 1.5 V (vs Ag/AgNO3) as well as the lower potential limit of a negative electrode of EDLCs from -2.0 V to ca. -2.5 V in 1 M TEABF4/PC (propylene carbonate) compared to ACs. This newly designed asymmetric EDLC exhibits a cell voltage of 4 V, specific energy of 52 Wh kg(-1) (ca. a device energy density of 13 Wh kg(-1)), and specific power of 8 kW kg(-1) and ca. 100% retention after 10,000 cycles charge-discharge, reducing the series number of EDLCs to enlarge the module voltage and opening the possibility for directly combining EDLCs and LIBs in advanced applications.

  20. Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Wang, Yi; Luan, Huakai; Dai, Qian; Wu, Zili; Zhao, Jianguo; Cui, Yiping

    2016-08-01

    The polar (0001)-oriented c-plane and non-polar (11 2 bar 0) -oriented a-plane wurtzite AlGaN epi-layers were successfully grown on polar (0001)-oriented c-plane and semi-polar (1 1 bar 02) -oriented r-plane sapphire substrates, respectively with various Si-doping levels in a low pressure metal organic chemical vapor deposition (MOCVD) system. The morphological, structural, electrical, and optical properties of the polar and non-polar AlGaN epi-layers were studied with scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall effect, and Raman spectroscopy. The characterization results show that Si dopants incorporated into the polar and non-polar AlGaN films induced a relaxation of compressive residual strain and a generation of biaxial tensile strain on the surface in consequence of the dislocation climbing. In particular, it was found that the Si-induced compressive strain relaxation in the non-polar AlGaN samples can be promoted by the structural anisotropy as compared with the polar counterparts. The gradually increased relaxation of compressive residual strain in both polar and non-polar AlGaN samples with increasing Si-doping level was attributed to the Si-induced enhancement in the opportunity for the dislocations to interact and annihilate. This implies that the crystal quality for both polar and non-polar AlGaN epi-layers can be remarkably improved by Si-doping.

  1. Influence of doping and doping level on magnetoelectric coupling in layered composites Tb1-xDyxFe2-y/Ba-Ti1-zMzO3+δ (M = Fe, Cr, Mn, Co)

    NASA Astrophysics Data System (ADS)

    Zhang, N.; Fan, J. F.; Cao, H. X.; Wei, J. J.

    2010-06-01

    Perovskites BaTi1-zMzO3+δ (M = Fe, Cr, Mn, Co) has been sol-gel synthesized. Their transformation point of ferroelectric to paraelectric and the latent heat of the transformation were found a little lower than those for pure BaTiO3 (BTO), respectively. Layered composites Tb1-xDyxFe2-y-BaTi1-zMzO3+δ have been fabricated. Their magnetoelectric (ME) effect has been investigated. All the bilayers containing the doped BTO displayed a stronger ME effects than that containing pure BTO does. The bilayer Tb1-xDyxFe2-y-BaTi0.99Cr0.01O3+δ was observed to show a larger ME coupling in the composites containing other doped BTO. While Tb1-xDyxFe2-y-BaTi0.985Fe0.015O3+δ showed the largest ME effects in the bilayers Tb1-xDyxFe2-y-BaTi1-zFezO3+δ (0 ≤ z ≤ 0.02). Additionally, the ME voltage coefficient for the trilayers Tb1-xDyxFe2-y-BaTi0.99M0.01O3+δ-Tb1-xDyxFe2-y was observed to be two or three times larger than that observed in the bilayers composed by the same substances. Theoretical analyses have been given for these observations. All the results suggest that the doped BTO can be a new choice of piezoelectrics in fabricating layered ME composites.

  2. Facile conversion of layered Ruddlesden-Popper-related structure Y2O3-doped Sr2CeO4 into fast oxide ion-conducting fluorite-type Y2O3-doped CeO2.

    PubMed

    Gerlach, Ryan Georg; Bhella, Surinderjit Singh; Thangadurai, Venkataraman

    2009-01-05

    The present work shows a new solid- and gas-phase reaction technique for the preparation of a fast oxide-ion-conducting Y(2)O(3)-doped Ce(1-x)Y(x)O(2-delta) (x = 0.1, 0.2) (YCO), which involves the reaction of layered (Ruddlesden-Popper K(2)NiF(4)-type) structure Y(2)O(3)-doped Sr(2)CeO(4) (YSCO) with CO(2) at an elevated temperature and subsequent acid-washing. A powder X-ray diffraction study revealed the formation of a single-phase cubic fluorite-type YCO for the CO(2)-reacted and subsequent acid-washed product. Energy dispersive X-ray analysis showed the absence of Sr in the CO(2)-treated and subsequent acid-washed product, confirming the transformation of layered YSCO into YCO. The cubic lattice constant was found to decrease with increasing Y content in YCO, which is consistent with the other YCO samples reported in the literature. The scanning electron microscopy study showed smaller-sized particles for the product obtained after CO(2)- and acid-washed YCO samples, while the high-temperature sintered YCO and the precursor YSCO exhibit larger-sized particles. The bulk ionic conductivity of the present CO(2)-capture-method-prepared YCO exhibits about one and half orders of magnitude higher electrical conductivity than that of the undoped CeO(2) and was found to be comparable to those of ceramic- and wet-chemical-method synthesized rare-earth-doped CeO(2).

  3. Photoresponsive azo-doped aerosil/7CB nematic liquid-crystalline nanocomposite films: the role of polyimide alignment layers of the films

    NASA Astrophysics Data System (ADS)

    Hadjichristov, Georgi B.; Marinov, Yordan G.

    2017-01-01

    We studied thin films (25 µm-thick) of nanomaterials composed from 3 wt.% aerosil nanospheres and the room-temperature nematic liquid crystal 4-n-heptyl cyanobiphenyl (7CB). The inclusion of 3 wt.% of the photoactive liquid crystal 4-(4‧-ethoxyphenylazo)phenyl hexanoate (EPH) in the aerosil/7CB nanostructured nematics make them photoresponsive. The films had alignment layers from rubbed polyimide (PI). Our study is concentrated on the inspection of the PI-role for the photo-stimulated electro-optical properties of the considered EPH-doped aerosil/7CB nanocomposite films.

  4. A new aspect of single-layered cuprate superconductors — 90 K superconductors for Ca-doped Bi2Sr2CuO6+δ single crystals

    NASA Astrophysics Data System (ADS)

    Yoshizaki, R.; Yamamoto, T.; Ikeda, H.; Kadowaki, K.

    2012-12-01

    We found that the highest Tc (Tc max) of the superconductors in Bi-2201 phase was 80-90 K for the partially Ca substituted Bi2Sr2CuO6+δ for Sr. The superconductivity was confirmed to be bulk effect from a specific heat jump around Tc. By the findings the correlation between the structure and Tc max has been made clear and simple with respect to the distance between Cu and the apical oxygen for the single-layered cuprate superconductors in the hole doped system.

  5. Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method.

    PubMed

    Balamurali, Subramanian; Chandramohan, Rathinam; Karunakaran, Marimuthu; Mahalingam, Thayan; Parameswaran, Padmanaban; Suryamurthy, Nagamani; Sukumar, Arcod Anandhakrishnan

    2013-07-01

    Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications.

  6. Control of p-type conduction in Mg doped monophase CuCrO2 thin layers

    NASA Astrophysics Data System (ADS)

    Chikoidze, E.; Boshta, M.; Gomaa, M.; Tchelidze, T.; Daraselia, D.; Japaridze, D.; Shengelaya, A.; Dumont, Y.; Neumann-Spallart, M.

    2016-05-01

    This work aims to clarify the origin of hole conduction in undoped and Mg-doped CuCrO2 oxide in order to have the possibility of controlling it by corresponding growth parameters. A chemical spray pyrolysis procedure for the deposition of p-type semiconductor thin films is described. The as-deposited films were amorphous. The formation of highly crystalline CuCrO2 and Mg-doped CuCrO2 films with a single phase delafossite structure was realized by annealing between 600 °C and 960 °C in a nitrogen atmosphere. The carrier concentration and the point defects of the samples are calculated by using the developed Kroger method of quasi-chemical reactions. p-type conductivity was predicted and observed in the undoped and Mg doped CuCrO2 sample, and with n ~ 1018 cm-3 carrier concentrations for 4%Mg doping. The electrical resistivity for a 4% Mg doped sample was 1.4 Ω·cm with a Seebeck coefficient of  +130 μV K-1 at 40 °C. By electroparamagnetic resonance spectroscopy Cr3+ and Cu2+ related defects were studied.

  7. Layered Lithium-Rich Oxide Nanoparticles Doped with Spinel Phase: Acidic Sucrose-Assistant Synthesis and Excellent Performance as Cathode of Lithium Ion Battery.

    PubMed

    Chen, Min; Chen, Dongrui; Liao, Youhao; Zhong, Xiaoxin; Li, Weishan; Zhang, Yuegang

    2016-02-01

    Nanolayered lithium-rich oxide doped with spinel phase is synthesized by acidic sucrose-assistant sol-gel combustion and evaluated as the cathode of a high-energy-density lithium ion battery. Physical characterizations indicate that the as-synthesized oxide (LR-SN) is composed of uniform and separated nanoparticles of about 200 nm, which are doped with about 7% spinel phase, compared to the large aggregated ones of the product (LR) synthesized under the same condition but without any assistance. Charge/discharge demonstrates that LR-SN exhibits excellent rate capability and cyclic stability: delivering an average discharge capacity of 246 mAh g(-1) at 0.2 C (1C = 250 mA g(-1)) and earning a capacity retention of 92% after 100 cycles at 4 C in the lithium anode-based half cell, compared to the 227 mA g(-1) and the 63% of LR, respectively. Even in the graphite anode-based full cell, LR-SN still delivers a capacity of as high as 253 mAh g(-1) at 0.1 C, corresponding to a specific energy density of 801 Wh kg(-1), which are the best among those that have been reported in the literature. The separated nanoparticles of the LR-SN provide large sites for charge transfer, while the spinel phase doped in the nanoparticles facilitates lithium ion diffusion and maintains the stability of the layered structure during cycling.

  8. Yb,Er-doped CeO2 nanotubes as an assistant layer for photoconversion-enhanced dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhao, Rongfang; Huan, Long; Gu, Peng; Guo, Rong; Chen, Ming; Diao, Guowang

    2016-11-01

    Yb,Er-doped CeO2 nanotubes were successfully synthesized using Ag nanowires as a hard template via a facile hydrothermal reaction and subsequent calcination and leaching processes. Yb,Er-doped CeO2 nanotubes as a promising assistant layer were investigated to determine theirs photovoltaic properties in an effort to enhance the power conversion efficiency of dye-sensitized solar cells (DSSCs). The influence factors of photoelectric properties of CeO2:Yb,Er NTs, including diameter of nanotubes, hydrothermal time, calcination temperature, and elements doping, have been studied. Compared with pristine P25 photoanode, the DSSCs fabricated by CeO2:Yb,Er nanotubes and P25 exhibited a power conversion efficiency (η) of 8.67%, an increase of 34%, and incident photo-to-electric conversion efficiency (IPCE) of 92.96%, an increase of 48.83%, which evidence that CeO2:Yb,Er NTs are a promising assistant photoanode material for DSSCs. The enhance mechanism of CeO2:Yb,Er nanotubes has been further revealed according to experimental results.

  9. Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

    NASA Astrophysics Data System (ADS)

    Ambri Mohamed, Mohd; Tien Lam, Pham; Bae, K. W.; Otsuka, N.

    2011-12-01

    Magnetic properties resulting from localized spins associated with antisite arsenic ions AsGa+ in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower than that expected from Curie-type paramagnetism in the range of the applied field to 7 T, and a transition from low magnetization to the magnetization of paramagnetism occurs upon the heating of samples to 4.5 K. With slow cooling, on the other hand, samples have a paramagnetic temperature dependence throughout the measurement-temperature range. The magnetization was found to decrease monotonically when a sample was kept at a fixed low temperature. These observations are explained by the cooperative transition of electron states of AsGa defects, which is closely related to the normal-metastable state transition of EL2 defects in semi-insulating GaAs. The results of the magnetization measurements in the present study suggest that AsGa+ ions are spontaneously displaced at low temperature without photoexcitation in Be-doped LT-GaAs. The similarity of the transition observed in this system to the normal-metastable state transition of the EL2 defect was also suggested by first-principle calculations of the electron state of an AsGa defect with a doped Be atom.

  10. Synthesis and visible light photocatalysis of Fe-doped TiO{sub 2} mesoporous layers deposited on hollow glass microbeads

    SciTech Connect

    Cui Lifeng; Wang Yuansheng; Niu Mutong; Chen Guoxin; Cheng Yao

    2009-10-15

    Nano-composite of Fe-doped anatase TiO{sub 2} nanocrystals loaded on the hollow glass microbeads was prepared by co-thermal hydrolysis deposition and calcining treatment. The adherence of TiO{sub 2} mesoporous layers to the surfaces of hollow glass microbeads prevented the aggregation of TiO{sub 2} nanoparticles and benefited to their catalytic activity. The doping of Fe ions makes the absorption edge of the TiO{sub 2} based nano-composite red-shifted into the visible region. An effective photodegradation of the methyl orange aqueous solution was achieved under visible light (lambda>420 nm) irradiation, revealing the potential applicability of such nano-composite in some industry fields, such as air and water purifications. - Graphical abstract: Nano-composite of Fe-doped anatase TiO{sub 2} nanocrystals loaded on the hollow glass microbeads was prepared by co-thermal hydrolysis deposition. Photodegradation of the methyl orange was achieved under visible light irradiation, revealing the potential applicability of such nano-composite in some industry fields.

  11. Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition.

    PubMed

    Cheng, Po-Hsien; Wang, Chun-Yuan; Chang, Teng-Jan; Shen, Tsung-Han; Cai, Yu-Syuan; Chen, Miin-Jang

    2017-04-13

    Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistance was achieved in the metallic channel transistors, in which the oxygen-doped TiN ultrathin-body channels were prepared by the atomic layer delta doping and deposition (AL3D) with precise control of the channel thickness and electron concentration. The decrease of channel thickness leads to the reduction in electron concentration and the blue shift of absorption spectrum, which can be explained by the onset of quantum confinement effect. The increase of oxygen incorporation results in the increase of interband gap energy, also giving rise to the decrease in electron concentration and the blue shift of absorption spectrum. Because of the significant decrease in electron concentration, the screening effect was greatly suppressed in the metallic channel. Therefore, the channel modulation by the gate electric field was achieved at room temperature due to the quantum confinement and suppressed screening effect with the thickness down to 4.8 nm and the oxygen content up to 35% in the oxygen-doped TiN ultrathin-body channel.

  12. Final Progress Report: FRACTURE AND SUBCRITICAL DEBONDING IN THIN LAYERED STRUCTURES: EXPERIMENTS AND MULTI-SCALE MODELING

    SciTech Connect

    Reinhold H. Dauskardt

    2005-08-30

    Final technical report detailing unique experimental and multi-scale computational modeling capabilities developed to study fracture and subcritical cracking in thin-film structures. Our program to date at Stanford has studied the mechanisms of fracture and fatigue crack-growth in structural ceramics at high temperature, bulk and thin-film glasses in selected moist environments where we demonstrated the presence of a true mechanical fatigue effect in some glass compositions. We also reported on the effects of complex environments and fatigue loading on subcritical cracking that effects the reliability of MEMS and other micro-devices using novel micro-machined silicon specimens and nanomaterial layers.

  13. Enhanced electrical property of Ni-doped CoOx hole transport layer for inverted perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Huang, Aibin; Lei, Lei; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

    2017-05-01

    Ultrathin Ni doped CoOx films were prepared by direct current co-sputtering at room temperature as inorganic hole transport materials for inverted perovskite solar cells. P-type doping was designed to adjust the valence band position of CoOx to match the that of CH3NH3PbI3, which would effectively eliminate the interface barrier. Moreover, the hole extraction ability would be enhanced and the power conversion efficiency of the devices hence increased from 3.68% to 9.60%. The optimized performance was also accompanied by decent stability as a result of its intrinsic stability.

  14. Enhanced electrical property of Ni-doped CoOx hole transport layer for inverted perovskite solar cells.

    PubMed

    Huang, Aibin; Lei, Lei; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

    2017-05-19

    Ultrathin Ni doped CoOx films were prepared by direct current co-sputtering at room temperature as inorganic hole transport materials for inverted perovskite solar cells. P-type doping was designed to adjust the valence band position of CoOx to match the that of CH3NH3PbI3, which would effectively eliminate the interface barrier. Moreover, the hole extraction ability would be enhanced and the power conversion efficiency of the devices hence increased from 3.68% to 9.60%. The optimized performance was also accompanied by decent stability as a result of its intrinsic stability.

  15. Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

    SciTech Connect

    Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo

    2016-03-15

    In order to improve the reliability of TFT, an Al{sub 2}O{sub 3} insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al{sub 2}O{sub 3} layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V {sub o}{sup 2+} toward the interface between the gate insulator and the semiconductor. The inserted Al{sub 2}O{sub 3} triple layer exhibits a noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm{sup 2}/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.

  16. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    SciTech Connect

    Kizu, Takio E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

    2016-07-28

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm{sup 2}/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V{sub O}) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V{sub O} in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  17. Analysis of the photodiode boundary layer transition indicator. LDRD final report

    SciTech Connect

    Kuntz, D.W.; Wilken, A.C.; Payne, J.L.

    1994-06-01

    The photodiode transition indicator is a device which has been successfully used to determine the onset of boundary layer transition on numerous hypersonic flight vehicles. The exact source of the electromagnetic radiation detected by the photodiode at transition was not understood. In some cases early saturation of the device occurred, and the device failed to detect transition. Analyses have been performed to determine the source of the radiation producing the photodiode signal. The results of these analyses indicate that the most likely source of the radiation is blackbody emission from the heatshield material bordering the quartz window of the device. Good agreement between flight data and calculations based on this radiation source has been obtained. Analyses also indicate that the most probable source of the radiation causing early saturation is blackbody radiation from carbon particles which break away from the nosetip during the ablation process.

  18. Nonlinear interactions in mixing layers and compressible heated round jets. Ph.D. Thesis Final Report

    NASA Technical Reports Server (NTRS)

    Jarrah, Yousef Mohd

    1989-01-01

    The nonlinear interactions between a fundamental instability mode and both its harmonics and the changing mean flow are studied using the weakly nonlinear stability theory of Stuart and Watson, and numerical solutions of coupled nonlinear partial differential equations. The first part focuses on incompressible cold (or isothermal; constant temperature throughout) mixing layers, and for these, the first and second Landau constants are calculated as functions of wavenumber and Reynolds number. It is found that the dominant contribution to the Landau constants arises from the mean flow changes and not from the higher harmonics. In order to establish the range of validity of the weakly nonlinear theory, the weakly nonlinear and numerical solutions are compared and the limitation of each is discussed. At small amplitudes and at low-to-moderate Reynolds numbers, the two results compare well in describing the saturation of the fundamental, the distortion of the mean flow, and the initial stages of vorticity roll-up. At larger amplitudes, the interaction between the fundamental, second harmonic, and the mean flow is strongly nonlinear and the numerical solution predicts flow oscillations, whereas the weakly nonlinear theory yields saturation. In the second part, the weakly nonlinear theory is extended to heated (or nonisothermal; mean temperature distribution) subsonic round jets where quadratic and cubic nonlinear interactions are present, and the Landau constants also depend on jet temperature ratio, Mach number and azimuthal mode number. Under exponential growth and nonlinear saturation, it is found that heating and compressibility suppress the growth of instability waves, that the first azimuthal mode is the dominant instability mode, and that the weakly nonlinear solution describes the early stages of the roll-up of an axisymmetric shear layer. The receptivity of a typical jet flow to pulse type input disturbance is also studied by solving the initial value problem

  19. Low-Temperature Solution-Processed Thiophene-Sulfur-Doped Planar ZnO Nanorods as Electron-Transporting Layers for Enhanced Performance of Organic Solar Cells.

    PubMed

    Ambade, Swapnil B; Ambade, Rohan B; Bagde, Sushil S; Eom, Seung Hun; Mane, Rajaram S; Shin, Won Suk; Lee, Soo-Hyoung

    2017-02-01

    1-D ZnO represents a fascinating class of nanostructures that are significant to optoelectronics. In this work, we investigated the use of an eco-friendly, metal free in situ doping through a pure thiophene-sulfur (S) on low temperature processed (<95 °C) and annealed (<170 °C), planar 1-D ZnO nanorods (ZnRs) spin-coated as a hole-blocking and electron transporting layer (ETL) for inverted organic solar cells (iOSCs). The TEM, HRTEM, XPS, FT-IR, EDS and Raman studies clearly reveal that the thiophene-S (Thi-S) atom is incorporated on planar ZnRs. The investigations in electrical properties suggest the enhancement in conductivity after Thi-S doping on 1-D ZnRs. The iOSCs of poly(3-hexylthiophene-2,5-diyl) and phenyl-C61-butyric acid methyl ester (P3HT: PC60BM) photoactive layer containing thiophene-S doped planar ZnRs (Thi-S-PZnRs) as ETL exhibits power conversion efficiency (PCE) of 3.68% under simulated AM 1.5 G, 100 mW cm(-2) illumination. The ∼47% enhancement in PCE compared with pristine planar ZnRs (PCE = 2.38%) ETL is attributed to a combination of desirable energy level alignment, morphological modification, increased conductivity and doping effect. The universality of Thi-S-PZnRs ETL is demonstrated by the highest PCE of 8.15% in contrast to 6.50% exhibited by the iOSCs of ZnRs ETL for the photoactive layer comprising of poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b;4,5-b]dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]: phenyl-C71-butyric acid methyl ester (PTB7-Th: PCB71M). This enhancement in PCE is observed to be driven mainly through improved photovoltaic parameters like fill factor (ff) as well as photocurrent density (Jsc), which are assigned to increased conductivity, exciton dissociation, and effective charge extraction, while; better ohmic contact, reduced charge recombination, and low leakage current density resulted in increased Voc.

  20. Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

    SciTech Connect

    Kurai, Satoshi Yamada, Yoichi; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-01-14

    Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractions of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.

  1. Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure.

    PubMed

    Nazir, Safdar; Bernal, Camille; Yang, Kesong

    2015-03-11

    The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals.

  2. Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus.

    PubMed

    Baik, Seung Su; Kim, Keun Su; Yi, Yeonjin; Choi, Hyoung Joon

    2015-12-09

    Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications.

  3. The formation of nano-layered grains and their enhanced superconducting transition temperature in Mg-doped FeSe0.9 bulks

    PubMed Central

    Lan, Feng; Ma, Zongqing; Liu, Yongchang; Chen, Ning; Cai, Qi; Li, Huijun; Barua, Shaon; Patel, Dipak; Hossain, M. Shahriar Al; Kim, Jung Ho; Dou, Shi Xue

    2014-01-01

    To search a proper dopant to further improve superconductivity in 11 type Fe-based superconductors makes sense to both their superconductivity mechanism and possible technological applications. In present work, Mg doped FeSe polycrystalline bulks were obtained by a two-step solid-state reaction method. Even though there are many MgSe and iron impurities existing in the Mg heavy doped FeSe bulks, they exhibit obviously increased Tc compared to undoped FeSe sample. It was found that Mg addition has little effect on the crystal lattice parameters of superconducting β-FeSe, whereas leads to the formation of nano-layered grain structure consisted of MgSe and β-FeSe with similar X-ray diffraction characteristics. Lots of nano-structural interfaces between FeSe and MgSe formed in this homogenous layered grain structure have significant effect on the superconducting properties and are responsible for the enhancement of Tc, as like the case of FeSe thin film on some specific substrates. Our work not only demonstrates a powerful way for raising Tc in bulk superconductors, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by considering interface effect. PMID:25257951

  4. Microwave-Assisted Synthesis of Highly-Crumpled, Few-Layered Graphene and Nitrogen-Doped Graphene for Use as High-Performance Electrodes in Capacitive Deionization

    PubMed Central

    Amiri, Ahmad; Ahmadi, Goodarz; Shanbedi, Mehdi; Savari, Maryam; Kazi, S. N.; Chew, B. T.

    2015-01-01

    Capacitive deionization (CDI) is a promising procedure for removing various charged ionic species from brackish water. The performance of graphene-based material in capacitive deionization is lower than the expectation of the industry, so highly-crumpled, few-layered graphene (HCG) and highly-crumpled nitrogen-doped graphene (HCNDG) with high surface area have been introduced as promising candidates for CDI electrodes. Thus, HCG and HCNDG were prepared by exfoliation of graphite in the presence of liquid-phase, microwave-assisted methods. An industrially-scalable, cost-effective, and simple approach was employed to synthesize HCG and HCNDG, resulting in few-layered graphene and nitrogen-doped graphene with large specific surface area. Then, HCG and HCNDG were utilized for manufacturing a new class of carbon nanostructure-based electrodes for use in large-scale CDI equipment. The electrosorption results indicated that both the HCG and HCNDG have fairly large specific surface areas, indicating their huge potential for capacitive deionization applications. PMID:26643279

  5. The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Ding, Xingwei; Qin, Cunping; Song, Jiantao; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin

    2017-01-01

    Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E a, which can explain the experimental observation. A high-field effect mobility of 9.4 cm2/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 107 and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.

  6. Improved photovoltaic performance of inverted polymer solar cells through a sol-gel processed Al-doped ZnO electron extraction layer.

    PubMed

    Kim, Jun Young; Cho, Eunae; Kim, Jaehoon; Shin, Hyeonwoo; Roh, Jeongkyun; Thambidurai, Mariyappan; Kang, Chan-mo; Song, Hyung-Jun; Kim, SeongMin; Kim, Hyeok; Lee, Changhee

    2015-09-21

    We demonstrate that nanocrystalline Al-doped zinc oxide (n-AZO) thin film used as an electron-extraction layer can significantly enhance the performance of inverted polymer solar cells based on the bulk heterojunction of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl C(71)-butyric acid methyl ester (PC(70)BM). A synergistic study with both simulation and experiment on n-AZO was carried out to offer a rational guidance for the efficiency improvement. As a result, An n-AZO film with an average grain size of 13 to 22 nm was prepared by a sol-gel spin-coating method, and a minimum resistivity of 2.1 × 10(-3) Ω·cm was obtained for an Al-doping concentration of 5.83 at.%. When an n-AZO film with a 5.83 at.% Al concentration was inserted between the ITO electrode and the active layer (PCDTBT:PC(70)BM), the power conversion efficiency increased from 3.7 to 5.6%.

  7. Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

    NASA Astrophysics Data System (ADS)

    Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

    2016-12-01

    We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

  8. The formation of nano-layered grains and their enhanced superconducting transition temperature in Mg-doped FeSe0.9 bulks.

    PubMed

    Lan, Feng; Ma, Zongqing; Liu, Yongchang; Chen, Ning; Cai, Qi; Li, Huijun; Barua, Shaon; Patel, Dipak; Al Hossain, M Shahriar; Kim, Jung Ho; Dou, Shi Xue

    2014-09-26

    To search a proper dopant to further improve superconductivity in 11 type Fe-based superconductors makes sense to both their superconductivity mechanism and possible technological applications. In present work, Mg doped FeSe polycrystalline bulks were obtained by a two-step solid-state reaction method. Even though there are many MgSe and iron impurities existing in the Mg heavy doped FeSe bulks, they exhibit obviously increased Tc compared to undoped FeSe sample. It was found that Mg addition has little effect on the crystal lattice parameters of superconducting β-FeSe, whereas leads to the formation of nano-layered grain structure consisted of MgSe and β-FeSe with similar X-ray diffraction characteristics. Lots of nano-structural interfaces between FeSe and MgSe formed in this homogenous layered grain structure have significant effect on the superconducting properties and are responsible for the enhancement of Tc, as like the case of FeSe thin film on some specific substrates. Our work not only demonstrates a powerful way for raising Tc in bulk superconductors, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by considering interface effect.

  9. The formation of nano-layered grains and their enhanced superconducting transition temperature in Mg-doped FeSe0.9 bulks

    NASA Astrophysics Data System (ADS)

    Lan, Feng; Ma, Zongqing; Liu, Yongchang; Chen, Ning; Cai, Qi; Li, Huijun; Barua, Shaon; Patel, Dipak; Hossain, M. Shahriar Al; Kim, Jung Ho; Dou, Shi Xue

    2014-09-01

    To search a proper dopant to further improve superconductivity in 11 type Fe-based superconductors makes sense to both their superconductivity mechanism and possible technological applications. In present work, Mg doped FeSe polycrystalline bulks were obtained by a two-step solid-state reaction method. Even though there are many MgSe and iron impurities existing in the Mg heavy doped FeSe bulks, they exhibit obviously increased Tc compared to undoped FeSe sample. It was found that Mg addition has little effect on the crystal lattice parameters of superconducting β-FeSe, whereas leads to the formation of nano-layered grain structure consisted of MgSe and β-FeSe with similar X-ray diffraction characteristics. Lots of nano-structural interfaces between FeSe and MgSe formed in this homogenous layered grain structure have significant effect on the superconducting properties and are responsible for the enhancement of Tc, as like the case of FeSe thin film on some specific substrates. Our work not only demonstrates a powerful way for raising Tc in bulk superconductors, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by considering interface effect.

  10. Microwave-Assisted Synthesis of Highly-Crumpled, Few-Layered Graphene and Nitrogen-Doped Graphene for Use as High-Performance Electrodes in Capacitive Deionization

    NASA Astrophysics Data System (ADS)

    Amiri, Ahmad; Ahmadi, Goodarz; Shanbedi, Mehdi; Savari, Maryam; Kazi, S. N.; Chew, B. T.

    2015-12-01

    Capacitive deionization (CDI) is a promising procedure for removing various charged ionic species from brackish water. The performance of graphene-based material in capacitive deionization is lower than the expectation of the industry, so highly-crumpled, few-layered graphene (HCG) and highly-crumpled nitrogen-doped graphene (HCNDG) with high surface area have been introduced as promising candidates for CDI electrodes. Thus, HCG and HCNDG were prepared by exfoliation of graphite in the presence of liquid-phase, microwave-assisted methods. An industrially-scalable, cost-effective, and simple approach was employed to synthesize HCG and HCNDG, resulting in few-layered graphene and nitrogen-doped graphene with large specific surface area. Then, HCG and HCNDG were utilized for manufacturing a new class of carbon nanostructure-based electrodes for use in large-scale CDI equipment. The electrosorption results indicated that both the HCG and HCNDG have fairly large specific surface areas, indicating their huge potential for capacitive deionization applications.

  11. Efficiency enhancement in DIBSQ:PC71BM organic photovoltaic cells by using Liq-doped Bphen as a cathode buffer layer

    NASA Astrophysics Data System (ADS)

    Chen, Guo; Si, Changfeng; Zhang, Pengpeng; Guo, Kunping; Pan, Saihu; Zhu, Wenqing; Wei, Bin

    2017-06-01

    We have improved the photovoltaic performance of 2,4-bis[4-(N,Ndiisobutylamino)- 2,6-dihydroxyphenyl] squaraine:[6,6]-phenyl C71-butyric acid methyl ester (DIBSQ:PC71BM) organic photovoltaic (OPV) cells via incorporating Liq-doped Bphen (Bphen-Liq) as a cathode buffer layer (CBL). Based on the Bphen-Liq CBL, a DIBSQ:PC71BM OPV cell possessed an optimal power conversion efficiency of 4.90%, which was 13% and 60% higher than those of the devices with neat Bphen as CBL and without CBL, respectively. The enhancement of the device performance could be attributed to the enhanced electron mobility and improved electrode/active layer contact and thus the improved photocurrent extraction by incorporating the Bphen-Liq CBL. Light-intensity dependent device performance analysis indicates that the incorporating of the Bphen-Liq CBL can remarkably improve the charge transport of the DIBSQ:PC71BM OPV cell and thus decrease the recombination losses of the device, resulting in enhanced device performance. Our finding indicates that the doped Bphen-Liq CBL has great potential for high-performance solution-processed small-molecule OPVs.

  12. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Jagadamma, Lethy K.; Al-Senani, Mohammed; Amassian, Aram

    2015-10-01

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

  13. Efficiency enhancement in DIBSQ:PC71BM organic photovoltaic cells by using Liq-doped Bphen as a cathode buffer layer

    NASA Astrophysics Data System (ADS)

    Chen, Guo; Si, Changfeng; Zhang, Pengpeng; Guo, Kunping; Pan, Saihu; Zhu, Wenqing; Wei, Bin

    2017-09-01

    We have improved the photovoltaic performance of 2,4-bis[4-(N,Ndiisobutylamino)- 2,6-dihydroxyphenyl] squaraine:[6,6]-phenyl C71-butyric acid methyl ester (DIBSQ:PC71BM) organic photovoltaic (OPV) cells via incorporating Liq-doped Bphen (Bphen-Liq) as a cathode buffer layer (CBL). Based on the Bphen-Liq CBL, a DIBSQ:PC71BM OPV cell possessed an optimal power conversion efficiency of 4.90%, which was 13% and 60% higher than those of the devices with neat Bphen as CBL and without CBL, respectively. The enhancement of the device performance could be attributed to the enhanced electron mobility and improved electrode/active layer contact and thus the improved photocurrent extraction by incorporating the Bphen-Liq CBL. Light-intensity dependent device performance analysis indicates that the incorporating of the Bphen-Liq CBL can remarkably improve the charge transport of the DIBSQ:PC71BM OPV cell and thus decrease the recombination losses of the device, resulting in enhanced device performance. Our finding indicates that the doped Bphen-Liq CBL has great potential for high-performance solution-processed small-molecule OPVs.

  14. Improving biogas separation and methane storage with multilayer graphene nanostructure via layer spacing optimization and lithium doping: a molecular simulation investigation.

    PubMed

    Chen, Jie-Jie; Li, Wen-Wei; Li, Xue-Liang; Yu, Han-Qing

    2012-09-18

    Methane is a desirable alternative to conventional fossil fuels, and also a main component of biogas from anaerobic fermentation of organic wastes. However, its relatively lower purity and poor storage by existing adsorbent materials negatively affect its wide application. Thus, efficient, cost-effective, and safe adsorbent materials for methane purification and storage are highly desired. In this study, multilayer graphene nanostructures (MGNs) with optimized structure are investigated as a potential adsorbent for this purpose. The effects of layer distance and Li doping on MGN performance in terms of methane storage and acid gas (H(2)S and CO(2)) separation from biogas are examined by molecular simulations. The mechanisms for the interactions between gas molecules and substrates are elucidated by analyzing the binding energy, geometric structures, and charge distribution from the first-principles calculations. The results show that nonhydrocarbons in biogas can be effectively separated using Li-doped MGNs with the optimal layer distance of 0.68 nm, and then the pure methane gas can be stored in MGNs with capacity satisfying the DOE target. This work offers a molecular-level insight into the interactions between gas molecules and MGNs and might provide useful information for development of new materials for methane purification and storage.

  15. The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition.

    PubMed

    Ding, Xingwei; Qin, Cunping; Song, Jiantao; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin

    2017-12-01

    Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E a, which can explain the experimental observation. A high-field effect mobility of 9.4 cm(2)/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 10(7) and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.

  16. Ni-based anode-supported Al2O3-doped-Y2O3-stabilized ZrO2 thin electrolyte solid oxide fuel cells with Y2O3-stabilized ZrO2 buffer layer

    NASA Astrophysics Data System (ADS)

    Lei, Libin; Bai, Yaohui; Liu, Jiang

    2014-02-01

    In order to reduce the sintering temperature of Ni-based anode-supported thin 8 mol% yttria-stabilized zirconia (YSZ) elsectrolyte solid oxide fuel cells (SOFCs), alumina, with a weight percent of 1, 3, 5, and 7, is respectively doped into YSZ as sintering aid. A pure YSZ buffer layer is introduced between the Al2O3-doped-YSZ electrolyte and Ni-YSZ anode, to prevent Al2O3 and NiO from forming non-conductive spinel NiAl2O4. The experimental results show that doping proper amount of Al2O3 doping can reduce the sintering temperature of YSZ, e.g., 1 wt.% doping decreases the temperature from 1673 K to 1573 K. Anode-supported SOFCs are prepared with Al2O3-doped-YSZ electrolytes sintered at different temperatures. Electrochemical characterization of the SOFCs shows that the single cell with 1 wt.% alumina-doped YSZ electrolyte sintered at 1573 K gives the highest output. The effect of alumina doping on sintering behavior and electrical performance of YSZ is discussed in detail.

  17. Clouds, Aerosol, and Precipitation in the Marine Boundary Layer (CAP-MBL) Final Campaign Report

    SciTech Connect

    Wood, R.

    2016-01-01

    The extensive coverage of low clouds over the subtropical eastern oceans greatly impacts the current climate. In addition, the response of low clouds to changes in atmospheric greenhouse gases and aerosols is a major source of uncertainty, which thwarts accurate prediction of future climate change. Low clouds are poorly simulated in climate models, partly due to inadequate long-term simultaneous observations of their macrophysical and microphysical structure, radiative effects, and associated aerosol distribution in regions where their impact is greatest. The thickness and extent of subtropical low clouds is dependent on tight couplings between surface fluxes of heat and moisture, radiative cooling, boundary layer turbulence, and precipitation (much of which evaporates before reaching the ocean surface and is closely connected to the abundance of cloud condensation nuclei). These couplings have been documented as a result of past field programs and model studies. However, extensive research is still required to achieve a quantitative understanding sufficient for developing parameterizations, which adequately predict aerosol indirect effects and low cloud response to climate perturbations. This is especially true of the interactions between clouds, aerosol, and precipitation. These processes take place in an ever-changing synoptic environment that can confound interpretation of short time period observations.

  18. Transforming the representation of the boundary layer and low clouds for high-resolution regional climate modeling: Final report

    SciTech Connect

    Huang, Hsin-Yuan; Hall, Alex

    2013-07-24

    the mostly dry mountain-breeze circulations force an additional component that results in semi-diurnal variations near the coast. A series of numerical tests, however, reveal sensitivity of the simulations to the choice of vertical grid, limiting the possibility of solid quantitative statements on the amplitudes and phases of the diurnal and semidiurnal components across the domain. According to our experiments, the Mellor-Yamada-Nakanishi-Niino (MYNN) boundary layer scheme and the WSM6 microphysics scheme is the combination of schemes that performs best. For that combination, mean cloud cover, liquid water path, and cloud depth are fairly wellsimulated, while mean cloud top height remains too low in comparison to observations. Both microphysics and boundary layer schemes contribute to the spread in liquid water path and cloud depth, although the microphysics contribution is slightly more prominent. Boundary layer schemes are the primary contributors to cloud top height, degree of adiabaticity, and cloud cover. Cloud top height is closely related to surface fluxes and boundary layer structure. Thus, our study infers that an appropriate tuning of cloud top height would likely improve the low-cloud representation in the model. Finally, we show that entrainment governs the degree of adiabaticity, while boundary layer decoupling is a control on cloud cover. In the intercomparison study using WRF single-column model experiments, most parameterizations show a poor agreement of the vertical boundary layer structure when compared with large-eddy simulation models. We also implement a new Total-Energy/Mass- Flux boundary layer scheme into the WRF model and evaluate its ability to simulate both stratocumulus and shallow cumulus clouds. Result comparisons against large-eddy simulation show that this advanced parameterization based on the new Eddy-Diffusivity/Mass-Flux approach provides a better performance than other boundary layer parameterizations.

  19. LDRD Project 52523 final report :Atomic layer deposition of highly conformal tribological coatings.

    SciTech Connect

    Jungk, John Michael; Dugger, Michael Thomas; George, Steve M.; Prasad, Somuri V.; Grubbs, Robert K.; Moody, Neville Reid; Mayer, Thomas Michael; Scharf, Thomas W.; Goeke, Ronald S.; Gerberich, William W.

    2005-10-01

    Friction and wear are major concerns in the performance and reliability of micromechanical (MEMS) devices. While a variety of lubricant and wear resistant coatings are known which we might consider for application to MEMS devices, the severe geometric constraints of many micromechanical systems (high aspect ratios, shadowed surfaces) make most deposition methods for friction and wear-resistance coatings impossible. In this program we have produced and evaluate highly conformal, tribological coatings, deposited by atomic layer deposition (ALD), for use on surface micromachined (SMM) and LIGA structures. ALD is a chemical vapor deposition process using sequential exposure of reagents and self-limiting surface chemistry, saturating at a maximum of one monolayer per exposure cycle. The self-limiting chemistry results in conformal coating of high aspect ratio structures, with monolayer precision. ALD of a wide variety of materials is possible, but there have been no studies of structural, mechanical, and tribological properties of these films. We have developed processes for depositing thin (<100 nm) conformal coatings of selected hard and lubricious films (Al2O3, ZnO, WS2, W, and W/Al{sub 2}O{sub 3} nanolaminates), and measured their chemical, physical, mechanical and tribological properties. A significant challenge in this program was to develop instrumentation and quantitative test procedures, which did not exist, for friction, wear, film/substrate adhesion, elastic properties, stress, etc., of extremely thin films and nanolaminates. New scanning probe and nanoindentation techniques have been employed along with detailed mechanics-based models to evaluate these properties at small loads characteristic of microsystem operation. We emphasize deposition processes and fundamental properties of ALD materials, however we have also evaluated applications and film performance for model SMM and LIGA devices.

  20. Slurry spin coating of thin film yttria stabilized zirconia/gadolinia doped ceria bi-layer electrolytes for solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Kim, Hyun Joong; Kim, Manjin; Neoh, Ke Chean; Han, Gwon Deok; Bae, Kiho; Shin, Jong Mok; Kim, Gyu-Tae; Shim, Joon Hyung

    2016-09-01

    Thin ceramic bi-layered membrane comprising yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is fabricated by the cost-effective slurry spin coating technique, and it is evaluated as an electrolyte of solid oxide fuel cells (SOFCs). It is demonstrated that the slurry spin coating method is capable of fabricating porous ceramic films by adjusting the content of ethyl-cellulose binders in the source slurry. The porous GDC layer deposited by spin coating under an optimal condition functions satisfactorily as a cathode-electrolyte interlayer in the test SOFC stack. A 2-μm-thick electrolyte membrane of the spin-coated YSZ/GDC bi-layer is successfully deposited as a dense and stable film directly on a porous NiO-YSZ anode support without any interlayers, and the SOFC produces power output over 200 mW cm-2 at 600 °C, with an open circuit voltage close to 1 V. Electrochemical impedance spectra analysis is conducted to evaluate the performance of the fuel cell components in relation with the microstructure of the spin-coated layers.