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Sample records for doped layer final

  1. Quantum dot laser optimization: selectively doped layers

    NASA Astrophysics Data System (ADS)

    Korenev, Vladimir V.; Konoplev, Sergey S.; Savelyev, Artem V.; Shernyakov, Yurii M.; Maximov, Mikhail V.; Zhukov, Alexey E.

    2016-08-01

    Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics.

  2. Calcium-doped ceria/titanate tabular functional nanocomposite by layer-by-layer coating method

    SciTech Connect

    Liu, Xiang W.; Devaraju, M.K.; Yin, Shu; Sato, Tsugio

    2010-07-15

    Ca-doped ceria (CDC)/tabular titanate (K{sub 0.8}Li{sub 0.27}Ti{sub 1.73}O{sub 4}, TT) UV-shielding functional nanocomposite with fairly uniform CDC coating layers was prepared through a polyelectrolyte-associated layer-by-layer (LbL) coating method. TT with lepidocrocite-like layered structure was used as the substrate, poly (diallyldimethylammonium chloride) (PDDA) was used as a coupling agent, CDC nanoparticles were used as the main UV-shielding component. CDC/TT nanocomposites with various coating layers of CDC were obtained through a multistep coating process. The phases were studied by X-ray diffraction. The morphology and coating quality were studied by scanning electron microscopy and element mapping of energy dispersive X-ray analysis. The oxidation catalytic activity, UV-shielding ability and using comfort were characterized by Rancimat test, UV-vis spectra and dynamic friction test, respectively. CDC/TT nanocomposites with low oxidation catalytic activity, high UV-shielding ability and good using comfort were finally obtained. - Graphical abstract: Through the control of surface charge of particles calcium-doped ceria/titanate composites with low oxidation catalytic activity, higher UV-shielding ability and excellent comfort was obtained by a facile layer-by-layer coating method.

  3. Superconducting junctions from doped nonsuperconducting CuO2 layers

    NASA Astrophysics Data System (ADS)

    Loktev, V. M.; Pogorelov, Yu. G.

    2011-04-01

    The theoretical approach proposed recently to describe the redistribution of electronic charge in multilayered selectively doped systems is modified for a system with a finite number of layers. Special attention is payed to the case of a finite heterostructure made of copper-oxide layers which are all nonsuperconducting (including nonconducting) because the doping levels in them are beyond the characteristic interval for superconductivity. Specific finite structures and doping configurations are proposed to obtain atomically thin superconducting heterojunctions of different compositions.

  4. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  5. Improving the electrical properties of graphene layers by chemical doping

    NASA Astrophysics Data System (ADS)

    Farooq Khan, Muhammad; Zahir Iqbal, Muhammad; Waqas Iqbal, Muhammad; Eom, Jonghwa

    2014-10-01

    Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO3) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO3. The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics.

  6. Doped LZO buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  7. Nanoscale imaging of freestanding nitrogen doped single layer graphene.

    PubMed

    Iyer, Ganjigunte R S; Wang, Jian; Wells, Garth; Bradley, Michael P; Borondics, Ferenc

    2015-02-14

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.

  8. Nanoscale imaging of freestanding nitrogen doped single layer graphene

    NASA Astrophysics Data System (ADS)

    Iyer, Ganjigunte R. S.; Wang, Jian; Wells, Garth; Bradley, Michael P.; Borondics, Ferenc

    2015-01-01

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05385k

  9. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  10. Verification of electron doping in single-layer graphene due to H{sub 2} exposure with thermoelectric power

    SciTech Connect

    Hong, Sung Ju; Kang, Hojin; Soler-Delgado, David; Kim, Kyung Ho; Park, Yung Woo E-mail: kbh37@incheon.ac.kr; Park, Min; Lee, Minwoo; Jeong, Dae Hong; Shin, Dong Seok; Kim, Byung Hoon E-mail: kbh37@incheon.ac.kr; Kubatkin, Sergey

    2015-04-06

    We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H{sub 2} molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

  11. Unexpected strong magnetism of Cu doped single-layer MoS₂ and its origin.

    PubMed

    Yun, Won Seok; Lee, J D

    2014-05-21

    The magnetism of the 3d transition-metal (TM) doped single-layer (1L) MoS2, where the Mo atom is partially replaced by the 3d TM atom, is investigated using the first-principles density functional calculations. In a series of 3d TM doped 1L-MoS2's, the induced spin polarizations are negligible for Sc, Ti, and Cr dopings, while the induced spin polarizations are confirmed for V, Mn, Fe, Co, Ni, Cu, and Zn dopings and the systems become magnetic. Especially, the Cu doped system shows unexpectedly strong magnetism although Cu is nonmagnetic in its bulk state. The driving force is found to be a strong hybridization between Cu 3d states and 3p states of neighboring S, which results in an extreme unbalanced spin-population in the spin-split impurity bands near the Fermi level. Finally, we also discuss further issues of the Cu induced magnetism of 1L-MoS2 such as investigation of additional charge states, the Cu doping at the S site instead of the Mo site, and the Cu adatom on the layer (i.e., 1L-MoS2). PMID:24695769

  12. Unexpected strong magnetism of Cu doped single-layer MoS₂ and its origin.

    PubMed

    Yun, Won Seok; Lee, J D

    2014-05-21

    The magnetism of the 3d transition-metal (TM) doped single-layer (1L) MoS2, where the Mo atom is partially replaced by the 3d TM atom, is investigated using the first-principles density functional calculations. In a series of 3d TM doped 1L-MoS2's, the induced spin polarizations are negligible for Sc, Ti, and Cr dopings, while the induced spin polarizations are confirmed for V, Mn, Fe, Co, Ni, Cu, and Zn dopings and the systems become magnetic. Especially, the Cu doped system shows unexpectedly strong magnetism although Cu is nonmagnetic in its bulk state. The driving force is found to be a strong hybridization between Cu 3d states and 3p states of neighboring S, which results in an extreme unbalanced spin-population in the spin-split impurity bands near the Fermi level. Finally, we also discuss further issues of the Cu induced magnetism of 1L-MoS2 such as investigation of additional charge states, the Cu doping at the S site instead of the Mo site, and the Cu adatom on the layer (i.e., 1L-MoS2).

  13. Chemical erosion of atomically dispersed doped hydrocarbon layers by deuterium

    NASA Astrophysics Data System (ADS)

    Balden, M.; Roth, J.; Pardo, E. de Juan; Wiltner, A.

    2003-03-01

    The chemical erosion of atomically dispersed Ti-doped (˜10 at.%) amorphous hydrocarbon layers (a-C:H:Ti) was investigated in the temperature range of 300-800 K for 30 eV deuterium impact. Compared to pyrolytic graphite, the methane production yield is strongly reduced at elevated temperatures. This reduction starts from temperatures just above room temperature and is even larger than for B-doped graphite. The reduction of the activation energy for hydrogen release may be the dominant interpretation for the decreased hydrocarbon formation. The ratio of emitted CD 3 to CD 4 increases with temperature for pyrolytic graphite and even stronger for the doped layers. The fluence dependence of the chemical erosion yield was determined, which is explained by enrichment of the dopant due to the preferential erosion of C.

  14. Hopping Magnetotransport in the δ-DOPING Layer

    NASA Astrophysics Data System (ADS)

    Koch, F.

    We review the observations on hopping transport in planar arrays of Si donor atoms in GaAs epitaxial layers grown by molecular beam epitaxy. It is shown that properly designed δ-doping layers permit one to unambigously identify interference effects that result from the coherent superposition of the tunneling amplitudes along alternative paths in the plane. Magnetic flux through the area generated by the paths destroys the interference and leads to negative magnetoresistance. We discuss the observed non-monotonic variation of the resistance.

  15. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer

    PubMed Central

    Ciobanu, C. S.; Groza, A.; Iconaru, S. L.; Popa, C. L.; Chapon, P.; Chifiriuc, M. C.; Hristu, R.; Stanciu, G. A.; Negrila, C. C.; Ghita, R. V.; Ganciu, M.; Predoi, D.

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC—American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  16. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer.

    PubMed

    Ciobanu, C S; Groza, A; Iconaru, S L; Popa, C L; Chapon, P; Chifiriuc, M C; Hristu, R; Stanciu, G A; Negrila, C C; Ghita, R V; Ganciu, M; Predoi, D

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC-American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  17. Multi-layer model vs. single-layer model for N and P doped poly layers in etch bias modeling

    NASA Astrophysics Data System (ADS)

    Li, Jianliang; Vidal-Russell, Ezequiel; Beale, Daniel; Wang, Chunqing; Melvin, Lawrence S., III

    2010-09-01

    In modern photolithography, ever smaller critical dimension (CD) budgets require tighter control over the entire process, demanding more accurate practice of optical proximity correction (OPC). In last decade, the model based OPC (MBOPC) has outpaced the rule based OPC (RBOPC) and become widely adopted in semiconductor industry. During the MBOPC process, the physical models are called to compute the signal values at the evaluation points and the design patterns are perturbed such that the final model contours are as close to the targets as possible. It has been demonstrated that in addition to simulating the optics and resist effects, the physical models must accommodate the pattern distortion due to etch process as well. While the etch process may be lumped with optics and resist processes into one model for the 65nm and above nodes, it can no longer be treated as small perturbations on photolithographic effects for more advanced nodes and it is highly desired to build a physics-based etch model formulations that differ from the conventional convolution-based process models used to simulate the optical and resist effect. Our previous studies proposed a novel non-linear etch modeling object in combination with conventional convolution kernels, which simulates the non-optics and non-resist proximity effect successfully. This study examines further the non-linear etch modeling method by checking the different behaviors of N and p doped layers which physically have different etching rates and should be represented differently in etch modeling. The experimental results indicate that the fitting accuracy is significantly improved when the data points are split into N and P groups and calibrated separately. The N and P layer etch models are used in staged MBOPCs and the results are compared with single-layer model as well.

  18. Doping, adsorption, and polarity of atomic-layer materials: A predictive theory from systematic first-principles study

    NASA Astrophysics Data System (ADS)

    Saito, Susumu; Fujimoto, Yoshitaka; Koretsune, Takashi

    2015-03-01

    Based on the extensive first-principles electronic-structure study of various doped hexagonal boron-nitride (h-BN) atomic layers as well as that of various doped graphene and carbon nanotubes, we propose a simple but predictive theory of polarity in doped atomic-layer materials. We first report the electronic structure of the pristine h-BN, h-BN layers with B and B3N vacancies which have been experimentally produced and observed frequently, and doped h-BN layers, and show that both p-type and n-type h-BN layers can be produced in a variety of ways. We next review the electronic structure of doped graphene and carbon nanotubes and the effect of the H adsorption which can even change the polarity of the system. Finally we propose a simple but predictive theory which is based on the number of valence electrons of each system, and can explain the polarities of all the h-BN, graphene, and nanotube-based systems studied so far. Supported by MEXT 25107005 and 25104711, JSPS 22740252 and 26390062, and MEST TIES project.

  19. Impact of thin metal layer on the optical and electrical properties of indium-doped-tin oxide and aluminum-doped-zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Kumar, Melvin David; Park, Yun Chang; Kim, Joondong

    2015-06-01

    The distinguished transparent conductive oxide (TCO) layers like indium-doped-tin oxide (ITO) and aluminum-doped-zinc oxide (AZO) layers were prepared in different combinations with and without thin Ni metal layer. The optical and electrical properties of prepared samples were analyzed and compared with the objective to understand the role and influence of the Ni layer in each TCO combination. The highest transmittance value of 91.49% was exhibited by prepared AZO layers. Even though if the transmittance of Ni inserting TCO layers was marginally reduced than that of the ordinary TCO samples, they exhibited balanced optical properties with enhanced electrical properties. Carrier concentration of indium doped tin-oxide and aluminum doped zinc oxide (ITO/AZO) bilayer sample is increased more than double the times when the Ni layer was inserted between ITO and AZO. Thin layer of Ni in between TCO layers reduced sheet resistance and offered substantial transmittance, so that the figure of merit (FOM) value of Ni embedding TCOs was greater than that of TCOs without Ni layer. The ITO/Ni/AZO combination provided optimum results in all the electrical properties. As compared to other TCO/metal combinations, the overall performance of ITO/Ni/AZO tri-layer combination was appreciable. These results show that the optical and electrical properties of TCO layers could be enhanced by inserting a Ni layer with optimum thickness in between them.

  20. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    NASA Astrophysics Data System (ADS)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  1. Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

    NASA Astrophysics Data System (ADS)

    Park, Wug-Dong; Tanioka, Kenkichi

    2016-07-01

    Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current–voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current–voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.

  2. Graphene coated with controllable N-doped carbon layer by molecular layer deposition as electrode materials for supercapacitors

    NASA Astrophysics Data System (ADS)

    Chen, Yao; Gao, Zhe; Zhang, Bin; Zhao, Shichao; Qin, Yong

    2016-05-01

    In this work, graphene is coated with nitrogen-doped carbon layer, which is produced by a carbonization process of aromatic polyimide (PI) films deposited on the surfaces of graphene by molecular layer deposition (MLD). The utilization of MLD not only allows uniform coating of PI layers on the surfaces of pristine graphene without any surface treatment, but also enables homogenous dispersion of doped nitrogen atoms in the carbonized products. The as-prepared N-doped carbon layer coated graphene (NC-G) exhibited remarkable capacitance performance as electrode materials for supercapacitor, showing a high specific capacitance of 290.2 F g-1 at current density of 1 A g-1 in 6 M KOH aqueous electrolyte, meanwhile maintaining good rate performance and stable cycle capability. The NC-G synthesized by this way represents an alternative promising candidate as electrode material for supercapacitors.

  3. Contacts on n-type germanium using variably doped zinc oxide and highly doped indium tin oxide interfacial layers

    NASA Astrophysics Data System (ADS)

    Paramahans Manik, Prashanth; Lodha, Saurabh

    2015-05-01

    The impact of varying interfacial layer (IL) doping on the performance of Ti/IL/n-Ge contacts is demonstrated using undoped ZnO, aluminum-doped ZnO (AZO), and O-vacancy-doped n+-ZnO ILs having similar conduction band offsets ΔEc with respect to Ti and Ge. Diode and transfer length method measurements show Fermi-level unpinning for all the ILs; however, the contact resistance and its dependence on the IL thickness decrease with increasing IL doping owing to the reduction in the tunneling resistance. The contact resistivity depends on the IL doping (NIL) as ρ \\text{c-n + \\text{-ZnO}} < ρ \\text{c-AZO} < ρ \\text{c-ZnO} for N\\text{n + \\text{-ZnO}} > N\\text{AZO} > N\\text{ZnO}. Contacts using a highly doped, low ΔEc tin-doped In2O3 IL exhibit the lowest value, 1.4 × 10-7 Ω·cm2.

  4. Effect of Mo-doping concentration on the physical behaviour of sprayed ZnO layers

    SciTech Connect

    Reddy, T. Sreenivasulu; Reddy, M. Vasudeva; Reddy, K. T. Ramakrishna

    2015-06-24

    Mo-doped zinc oxide layers (MZO) have been prepared on cleaned glass substrates by chemical spray pyrolysis technique by varying Mo-doping concentration in the range, 0 – 5 at. %. The X-ray diffraction studies revealed that all the as prepared layers were polycrystalline in nature and exhibited wurtzite structure. The layers prepared with lower Mo-doping concentration (<2 at. %) were preferably oriented along the (100) plane, whereas in the case of higher Mo-doping concentration (>2 at. %), the films showed the (002) plane as the dominant peak. The optical analysis indicated that all the layers had an average optical transmittance of 80% in the visible region and the evaluated band gap varied in the range, 3.28 - 3.50 eV.

  5. Effect of Mo-doping concentration on the physical behaviour of sprayed ZnO layers

    NASA Astrophysics Data System (ADS)

    Reddy, T. Sreenivasulu; Reddy, M. Vasudeva; Reddy, K. T. Ramakrishna

    2015-06-01

    Mo-doped zinc oxide layers (MZO) have been prepared on cleaned glass substrates by chemical spray pyrolysis technique by varying Mo-doping concentration in the range, 0 - 5 at. %. The X-ray diffraction studies revealed that all the as prepared layers were polycrystalline in nature and exhibited wurtzite structure. The layers prepared with lower Mo-doping concentration (<2 at. %) were preferably oriented along the (100) plane, whereas in the case of higher Mo-doping concentration (>2 at. %), the films showed the (002) plane as the dominant peak. The optical analysis indicated that all the layers had an average optical transmittance of 80% in the visible region and the evaluated band gap varied in the range, 3.28 - 3.50 eV.

  6. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    DOEpatents

    Singh, Prabhakar; Ruka, Roswell J.

    1995-01-01

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO.sub.3 particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO.sub.3 particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr.sub.2 O.sub.3 on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO.sub.3 layer coated with CaO and Cr.sub.2 O.sub.3 surface deposit at from about 1000.degree. C. to 1200.degree. C. to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO.sub.3 layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power.

  7. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    DOEpatents

    Singh, P.; Ruka, R.J.

    1995-02-14

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO{sub 3} particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO{sub 3} particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr{sub 2}O{sub 3} on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO{sub 3} layer coated with CaO and Cr{sub 2}O{sub 3} surface deposit at from about 1,000 C to 1,200 C to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO{sub 3} layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power. 5 figs.

  8. Origin of ferromagnetism enhancement in bi-layer chromium-doped indium zinc oxides

    SciTech Connect

    Hsu, C. Y.

    2012-08-06

    This work demonstrates that by controlling the rapid thermal annealing temperature, amorphous chromium-doped indium zinc oxide films develop an amorphous-crystalline bi-layer structure and show magnetization up to {approx}30 emu/cm{sup 3}. The crystalline layer arises from significant out-diffusion of Zn from surfaces, leading to a large difference in the Zn:In ratio in amorphous and crystalline layers. Doped Cr ions in amorphous and crystalline layers form different valence configurations, creating a charge reservoir which transfers electrons through amorphous-crystalline interfaces and in turn enhances ferromagnetism.

  9. Metallic conduction induced by direct anion site doping in layered SnSe2.

    PubMed

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~10(20) cm(-3) is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S · cm(-1) from ~1.7 S · cm(-1) for non-doped SnSe2. When the carrier concentration exceeds ~10(19) cm(-3), the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2. PMID:26792630

  10. Metallic conduction induced by direct anion site doping in layered SnSe2

    NASA Astrophysics Data System (ADS)

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-Taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~1020 cm‑3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S·cm‑1 from ~1.7 S·cm‑1 for non-doped SnSe2. When the carrier concentration exceeds ~1019 cm‑3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2.

  11. Metallic conduction induced by direct anion site doping in layered SnSe2

    PubMed Central

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~1020 cm−3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S·cm−1 from ~1.7 S·cm−1 for non-doped SnSe2. When the carrier concentration exceeds ~1019 cm−3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2. PMID:26792630

  12. Defect formation and carrier doping in epitaxial films of the infinite layer compound

    SciTech Connect

    Feenstra, R.; Pennycook, S.J.; Chisholm, M.F.

    1996-02-01

    The correlation between defect formation and carrier doping in epitaxial films of the infinite layer compound SrCuO{sub 2} has been studied via molecular beam epitaxy controlled layer-by-layer growth experiments, chemically resolved scanning transmission electron microscopy, scanning tunneling microscopy, x-ray diffraction, electrical transport measurements, and post-growth oxidation-reduction annealing. Based on the complementary information provided by these experiments, it is concluded that the carrier doping is dominated by the formation of an electron-doped, Sr and O deficient matrix under mildly oxidizing growth conditions. Hole-doping is induced by extended defects containing excess Sr atoms and may lead to superconductivity after high-temperature oxidation.

  13. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  14. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    NASA Astrophysics Data System (ADS)

    Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

    2016-02-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

  15. Layer-resolved photoemission tomography: The p -sexiphenyl bilayer upon Cs doping

    NASA Astrophysics Data System (ADS)

    Reinisch, E. M.; Puschnig, P.; Ules, T.; Ramsey, M. G.; Koller, G.

    2016-04-01

    The buried interface between a molecular thin film and the metal substrate is generally not accessible to the photoemission experiment. With the example of a sexiphenyl (6 P ) bilayer on Cu we show that photoemission tomography can be used to study the electronic level alignment and geometric structure, where it was possible to assign the observed orbital emissions to the individual layers. We further study the Cs doping of this bilayer. Initial Cs exposure leads to a doping of only the first interface layer, leaving the second layer unaffected except for a large energy shift. This result shows that it is in principle possible to chemically modify just the interface, which is important to issues like tuning of the energy level alignment and charge transfer to the interface layer. Upon saturating the film with Cs, photoemission tomography shows a complete doping (6 p4 - ) of the bilayer, with the molecular geometry changing such that the spectra become dominated by σ -orbital emissions.

  16. Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Watanabe, M.; Actor, G.

    1977-01-01

    Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

  17. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOEpatents

    Yang, Liyou

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  18. Theoretical investigation of superconductivity in doped fullerenes. Final report

    SciTech Connect

    Jishi, R.A.

    1995-03-01

    The aim of the research the authors are conducting is to understand the phenomenon of superconductivity in the fullerene system. Towards achieving this goal they have conducted a series of studies and have published several papers quite recently. They have developed a force-constant model for the C60 molecule which accounts for all measured frequencies in C60. The model employs four bond-stretching and four angle-bending force constants that were doped to reproduce the correct values of the frequencies of the Raman-active vibrational modes. The model was successfully applied to higher fullerenes, such as C70 and the effect of doping by alkali metal atoms on the phonon modes in C60 and in C70 was considered. The study of the phonon spectrum in doped C60 and doped C70 is an important step in view of the fact that while doped C60 is superconducting, doped C70 is not. The studies the authors have carried out, combined with studies on the electronic states in doped C70, could elucidate the difference in the electrical properties between these two materials.

  19. Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Terasako, T.; Iida, S.; Ichinokura, H.; Kato, A.

    2005-11-01

    Raman spectra for non-site-selectively and site-selectively Zn-doped CuGaS2 layers grown by vapor phase epitaxy (VPE) were investigated. Although an appearance of characteristic Raman line(s) related with the doped Zn atom was not seen, an enhancement of the Raman intensity ratio of the highest LO mode to the A1 mode (ILO/IA1) was observed. The site-selectively Zn-doped layers with p-type conductivity exhibited larger ILO/IA1 ratio compared to those with n-type conductivity. The observed correlation between the ILO/IA1 ratio and the peak energy of the photoluminescence characteristic for Zn-doped p-type samples (L emission) suggests that the enhancement of ILO/IA1 is due to the increase of Zn atom substituting Ga site (ZnGa) which is acting as an acceptor.

  20. Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

    SciTech Connect

    Liang, Xianqing; Zhong, Jun; Shi, Yalin; Guo, Jin; Huang, Guolong; Hong, Caihao; Zhao, Yidong

    2015-01-15

    Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications.

  1. Designed nitrogen doping of few-layer graphene functionalized by selective oxygenic groups

    PubMed Central

    2014-01-01

    Few-layer nitrogen doped graphene was synthesized originating from graphene oxide functionalized by selective oxygenic functional groups (hydroxyl, carbonyl, carboxyl etc.) under hydrothermal conditions, respectively. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) observation evidenced few-layer feature of the graphene oxide. X-ray diffraction (XRD) pattern confirmed phase structure of the graphene oxide and reduced graphene oxide. Nitrogen doping content and bonding configuration of the graphene was determined by X-ray photoelectron spectroscopy (XPS), which indicated that different oxygenic functional groups were evidently different in affecting the nitrogen doping process. Compared with other oxygenic groups, carboxyl group played a crucial role in the initial stage of nitrogen doping while hydroxyls exhibited more evident contribution to the doping process in the late stage of the reaction. Formation of graphitic-like nitrogen species was controlled by a synergistic effect of the involved oxygenic groups (e.g., -COOH, -OH, C-O-C, etc.). The doping mechanism of nitrogen in the graphene was scrutinized. The research in this work may not only contribute to the fundamental understandings of nitrogen doping within graphene but promote the development of producing novel graphene-based devices with designed surface functionalization. PMID:25520594

  2. Band Gap Engineering and Layer-by-Layer Band Gap Mapping of Selenium-doped Molybdenum Disulfide

    SciTech Connect

    Gong, Yongji; Liu, Zheng; Lupini, Andrew R; Lin, Junhao; Pantelides, Sokrates T; Pennycook, Stephen J; Zhou, Wu; Ajayan, Pullikel M

    2014-01-01

    Ternary two-dimensional dichalcogenide alloys exhibit compositionally modulated electronic structure and hence, control of dopant concentration within each layer of these layered compounds provides a powerful way to modify their properties. The challenge then becomes quantifying and locating the dopant atoms within each layer in order to better understand and fine-tune the desired properties. Here we report the synthesis of selenium substitutionally doped molybdenum disulfide atomic layers, with a broad range of selenium concentrations, resulting in band gap modulations of over 0.2 eV. Atomic scale chemical analysis using Z-contrast imaging provides direct maps of the dopant atom distribution in individual MoS2 layers and hence a measure of the local band gaps. Furthermore, in a bilayer structure, the dopant distribution of each layer is imaged independently. We demonstrate that each layer in the bilayer contains similar doping levels, randomly distributed, providing new insights into the growth mechanism and alloying behavior in two-dimensional dichalcogenide atomic layers. The results show that growth of uniform, ternary, two-dimensional dichalcogenide alloy films with tunable electronic properties is feasible.

  3. Atomic-Layer-Confined Doping for Atomic-Level Insights into Visible-Light Water Splitting.

    PubMed

    Lei, Fengcai; Zhang, Lei; Sun, Yongfu; Liang, Liang; Liu, Katong; Xu, Jiaqi; Zhang, Qun; Pan, Bicai; Luo, Yi; Xie, Yi

    2015-08-01

    A model of doping confined in atomic layers is proposed for atomic-level insights into the effect of doping on photocatalysis. Co doping confined in three atomic layers of In2S3 was implemented with a lamellar hybrid intermediate strategy. Density functional calculations reveal that the introduction of Co ions brings about several new energy levels and increased density of states at the conduction band minimum, leading to sharply increased visible-light absorption and three times higher carrier concentration. Ultrafast transient absorption spectroscopy reveals that the electron transfer time of about 1.6 ps from the valence band to newly formed localized states is due to Co doping. The 25-fold increase in average recovery lifetime is believed to be responsible for the increased of electron-hole separation. The synthesized Co-doped In2S3 (three atomic layers) yield a photocurrent of 1.17 mA cm(-2) at 1.5 V vs. RHE, nearly 10 and 17 times higher than that of the perfect In2S3 (three atomic layers) and the bulk counterpart, respectively.

  4. HIGH-Tc Superconductivity in Electron-Doped Layer Structured Nitrides

    NASA Astrophysics Data System (ADS)

    Yamanaka, Shoji

    2000-08-01

    A new series of superconductors based on layer structured nitrides has been developed. The general compositions of the nitrides are MNX (M = Zr, Hf; X = Cl, Br, I). The beta-type polymorph consists of MN double layers sandwiched between close-packed halogen layers, which are characterized as semiconductors with a band gap of 3-4 eV. Electrons can be doped to the nitride layers by intercalation of alkali metals between the layers. Upon the intercalation, the compounds become superconductors with the transition temperatures (Tcs) as high as 13 and 25.5 K for beta-ZrNCl and beta-HfNCl systems, respectively. The Tc of the electron doped beta-HfNCl is higher than that observed in any intermetallic compound and suggests that layered nitrides may exhibit Tcs comparable to those observed in layer structured complex copper oxide superconductors. The layer structured nitrides can be variously modified by the amounts of doping, the types of alkali metals, and the interlayer separation, which can be controlled by co-intercalation of organic molecules with alkali metals. This article dicusses topics including the synthesis and structure of the transition metal nitride halides, intercalation, superconductivity, and band structures.

  5. Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers

    NASA Astrophysics Data System (ADS)

    Gordijn, A.; Rath, J. K.; Schropp, R. E. I.

    2004-06-01

    Microcrystalline silicon (μc-Si:H) p- and n-type layers have been developed by Layer-by-Layer (LbL) deposition at high temperatures. The LbL deposition consists of alternating boron or phosphorus doped amorphous silicon depositions and hydrogen plasma treatments by Very High Frequency Chemical Vapor Deposition (VHF PECVD). The layers are developed to be resistant to the temperature and hydrogen flux of a micro- of polycrystalline intrinsic layer grown at a high deposition rate in a p-i-n or an n-i-p solar cell device. It is concluded that the LbL method is suitable to produce device quality μc-Si:H p- and n-type doped layers in a temperature range from 250 to 400 °C. This is not possible with standard continuous PECVD employing high hydrogen dilution of silane, where the addition of dopants reduces the crystallinity. An optimum effective thickness per deposition cycle (total thickness divided by the number of cycles) of 1.5 nm/cycle is needed for the crystallization. This optimal effective sub layer thickness is independent of dopants and deposition temperature. However, a minimum thickness of the first layer is needed for a sustaining growth in the LbL process. The doped layers grown by LbL are smoother than reference samples grown by continuous wave (cw). The doping efficiencies in our LbL deposited layers are structurally higher than those in cw deposition (for p layers a doping efficiency of 39% in case of LbL, compared to 1% for cw). The properties of the best high-temperature doped layers are as follows: for LbL p-type μc-Si:H (Ts=350 °C, 29 nm), activation energy=0.11 eV and dark conductivity=0.1 Ω-1 cm-1; for LbL n-type μc-Si:H (Ts=400 °C, 31 nm), activation energy=0.056 eV and dark conductivity=2.7 Ω-1 cm-1. Test solar cells have been deposited using Hot-Wire CVD (HWCVD) and VHF PECVD deposited μc-Si:H i-layers on top of the high-temperature LbL μc-Si:H n-type doped layer in an n-i-p configuration on a stainless steel substrate without a back

  6. Spin tuning of electron-doped metal-phthalocyanine layers.

    PubMed

    Stepanow, Sebastian; Lodi Rizzini, Alberto; Krull, Cornelius; Kavich, Jerald; Cezar, Julio C; Yakhou-Harris, Flora; Sheverdyaeva, Polina M; Moras, Paolo; Carbone, Carlo; Ceballos, Gustavo; Mugarza, Aitor; Gambardella, Pietro

    2014-04-01

    The spin state of organic-based magnets at interfaces is to a great extent determined by the organic environment and the nature of the spin-carrying metal center, which is further subject to modifications by the adsorbate-substrate coupling. Direct chemical doping offers an additional route for tailoring the electronic and magnetic characteristics of molecular magnets. Here we present a systematic investigation of the effects of alkali metal doping on the charge state and crystal field of 3d metal ions in Cu, Ni, Fe, and Mn phthalocyanine (Pc) monolayers adsorbed on Ag. Combined X-ray absorption spectroscopy and ligand field multiplet calculations show that Cu(II), Ni(II), and Fe(II) ions reduce to Cu(I), Ni(I), and Fe(I) upon alkali metal adsorption, whereas Mn maintains its formal oxidation state. The strength of the crystal field at the Ni, Fe, and Mn sites is strongly reduced upon doping. The combined effect of these changes is that the magnetic moment of high- and low-spin ions such as Cu and Ni can be entirely turned off or on, respectively, whereas the magnetic configuration of MnPc can be changed from intermediate (3/2) to high (5/2) spin. In the case of FePc a 10-fold increase of the orbital magnetic moment accompanies charge transfer and a transition to a high-spin state.

  7. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  8. Quasi-particle band structure of potassium-doped few-layer black phosphorus with GW approximation

    NASA Astrophysics Data System (ADS)

    Kim, Han-Gyu; Baik, Seung Su; Choi, Hyoung Joon

    We calculate the quasi-particle band structure of pristine and potassium-doped black phosphorus (BP) by using the GW approximation. We obtain band gaps of pristine bulk and few-layer BP and compare them with the result of the density functional calculations and experimental measurements. For potassium-doped cases, we calculate the electronic band structure of potassium-doped few-layer BPs with various doping densities. We obtain the critical doping density for the band-gap closing, and the energy-band dispersions when the band gap is inverted. We discuss Dirac semimetal properties of doped few-layer BPs obtained by the GW approximation. This work was supported by NRF of Korea (Grant No. 2011-0018306) and KISTI supercomputing center (Project No. KSC-2015-C3-039).

  9. Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide

    PubMed Central

    Biscaras, Johan; Chen, Zhesheng; Paradisi, Andrea; Shukla, Abhay

    2015-01-01

    Atomically thin films of layered materials such as molybdenum disulfide (MoS2) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n-doping density of 4 × 1014 cm−2 in few-layer MoS2 on glass substrates. With increasing carrier density we first induce an insulator to metal transition and subsequently an incomplete metal to superconductor transition in MoS2 with critical temperature ≈10 K. Contrary to earlier reports, after the onset of superconductivity, the superconducting transition temperature does not depend on the carrier density. Our doping method and the results we obtain in MoS2 for samples as thin as bilayers indicates the potential of this approach. PMID:26525386

  10. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1988-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 1017 cm-3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  11. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Taskar, N. R.; Natarajan, V.; Bhat, I. B.; Grandhi, S. K.

    1990-01-01

    In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 10 17 cm -3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1-2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm 2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics.

  12. Biophotonic low-coherence sensors with boron-doped diamond thin layer

    NASA Astrophysics Data System (ADS)

    Milewska, D.; Karpienko, K.; Sobaszek, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    Low-coherence sensors using Fabry-Perot interferometers are finding new applications in biophotonic sensing, especially due to the rapid technological advances in the development of new materials. In this paper we discuss the possibility of using boron-doped nanodiamond layers to protect mirror in a Fabry-Perot interferometer. A low-coherence sensor using Fabry-Perot interferometer with a boron-doped nanodiamond (B-NCD) thin protective layer has been developed. B-NCD layers with different boron doping level were investigated. The boron level, expressed as the boron to carbon (/[C]) ratio in the gas phase, was: 0, 2000, 5000 or 10000 ppm. B-NCD layers were grown by chemical vapor deposition (CVD). The sensing Fabry-Perot interferometer, working in the reflective mode, was connected to the source and to the optical processor by single-mode fibers. Superluminescent diodes with Gaussian spectral density were used as sources, while an optical spectrum analyzer was used as an optical processor. The design of the sensing interferometer was optimized to attain the maximum interference contrast. The experiment has shown that B-NCD thin layers can be successfully used in biophotonic sensors.

  13. Methods for the doping of silicon layers in growth by sublimation MBE

    SciTech Connect

    Shengurov, V. G.; Svetlov, S. P. Chalkov, V. Yu.; Shengurov, D. V.; Denisov, S. A.

    2006-02-15

    Epitaxial layers doped with various impurities were grown by sublimation MBE on Si (100) substrates. Doping with phosphorus was controlled at electron densities ranging from 2x10{sup 13} to 10{sup 19} cm{sup -3}. A high dopant concentration of {approx}10{sup 20} cm{sup -3} was obtained from the evaporation of partly molten Si sources. It shown that the type and concentration of an impurity in the sublimation MBE process can be controlled by the fabrication of multilayer p{sup +}-n{sup +} structures.

  14. Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

    SciTech Connect

    Duong, Dinh Loc; Lee, Si Young; Kim, Seong Kyu; Lee, Young Hee

    2015-06-15

    We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another side with holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) and a hydrofluorinated graphene, were used to demonstrate the concept with density functional calculations, revealing the Fermi level shift of 0.35 and 0.75 eV, respectively. This concept was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE))/graphene hybrid, which can easily form β-phase close to our simulation model. G-band peak position was downshifted for electron doping and upshifted for hole doping. This hybrid structure opens an opportunity to study bilayer graphene system with a controllable thickness for a wide range of high carrier concentration.

  15. (abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

    NASA Technical Reports Server (NTRS)

    Barner, J. B.; Hunt, B. D.; Foote, M. C.

    1995-01-01

    We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

  16. Titanium doped silicon layers with very high concentration

    SciTech Connect

    Olea, J.; Toledano-Luque, M.; Pastor, D.; Gonzalez-Diaz, G.; Martil, I.

    2008-07-01

    Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10{sup 18} cm{sup -3}. Hall effect measurements show n-type samples with mobility values of about 400 cm{sup 2}/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.

  17. Macroporous p-GaP Photocathodes Prepared by Anodic Etching and Atomic Layer Deposition Doping.

    PubMed

    Lee, Sudarat; Bielinski, Ashley R; Fahrenkrug, Eli; Dasgupta, Neil P; Maldonado, Stephen

    2016-06-29

    P-type macroporous gallium phosphide (GaP) photoelectrodes have been prepared by anodic etching of an undoped, intrinsically n-type GaP(100) wafer and followed by drive-in doping with Zn from conformal ZnO films prepared by atomic layer deposition (ALD). Specifically, 30 nm ALD ZnO films were coated on GaP macroporous films and then annealed at T = 650 °C for various times to diffuse Zn in GaP. Under 100 mW cm(-2) white light illumination, the resulting Zn-doped macroporous GaP consistently exhibit strong cathodic photocurrent when measured in aqueous electrolyte containing methyl viologen. Wavelength-dependent photoresponse measurements of the Zn-doped macroporous GaP revealed enhanced collection efficiency at wavelengths longer than 460 nm, indicating that the ALD doping step rendered the entire material p-type and imparted the ability to sustain a strong internal electric field that preferentially drove photogenerated electrons to the GaP/electrolyte interface. Collectively, this work presents a doping strategy with a potentially high degree of controllability for high-aspect ratio III-V materials, where the ZnO ALD film is a practical dopant source for Zn.

  18. Macroporous p-GaP Photocathodes Prepared by Anodic Etching and Atomic Layer Deposition Doping.

    PubMed

    Lee, Sudarat; Bielinski, Ashley R; Fahrenkrug, Eli; Dasgupta, Neil P; Maldonado, Stephen

    2016-06-29

    P-type macroporous gallium phosphide (GaP) photoelectrodes have been prepared by anodic etching of an undoped, intrinsically n-type GaP(100) wafer and followed by drive-in doping with Zn from conformal ZnO films prepared by atomic layer deposition (ALD). Specifically, 30 nm ALD ZnO films were coated on GaP macroporous films and then annealed at T = 650 °C for various times to diffuse Zn in GaP. Under 100 mW cm(-2) white light illumination, the resulting Zn-doped macroporous GaP consistently exhibit strong cathodic photocurrent when measured in aqueous electrolyte containing methyl viologen. Wavelength-dependent photoresponse measurements of the Zn-doped macroporous GaP revealed enhanced collection efficiency at wavelengths longer than 460 nm, indicating that the ALD doping step rendered the entire material p-type and imparted the ability to sustain a strong internal electric field that preferentially drove photogenerated electrons to the GaP/electrolyte interface. Collectively, this work presents a doping strategy with a potentially high degree of controllability for high-aspect ratio III-V materials, where the ZnO ALD film is a practical dopant source for Zn. PMID:27254534

  19. Self-Doping, O2-Stable, n-Type Interfacial Layer for Organic Electronics

    SciTech Connect

    Reilly, T. H. III; Hains, A. W.; Chen, H. Y.; Gregg, B. A.

    2012-04-01

    Solid films of a water-soluble dicationic perylene diimide salt, perylene bis(2-ethyltrimethylammonium hydroxide imide), Petma{sup +}OH{sup -}, are strongly doped n-type by dehydration and reversibly de-doped by hydration. The hydrated films consist almost entirely of the neutral perylene diimide, PDI, while the dehydrated films contain {approx}50% PDI anions. The conductivity increases by five orders of magnitude upon dehydration, probably limited by film roughness, while the work function decreases by 0.74 V, consistent with an n-type doping density increase of {approx}12 orders of magnitude. Remarkably, the PDI anions are stable in dry air up to 120 C. The work function of the doped film, {phi} (3.96 V vs. vacuum), is unusually negative for an O{sub 2}-stable contact. Petma{sup +} OH{sup -} is also characterized as an interfacial layer, IFL, in two different types of organic photovoltaic cells. Results are comparable to state of the art cesium carbonate IFLs, but may improve if film morphology can be better controlled. The films are stable and reversible over many months in air and light. The mechanism of this unusual self-doping process may involve the change in relative potentials of the ions in the film caused by their deshielding and compaction as water is removed, leading to charge transfer when dry.

  20. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  1. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    DOE PAGES

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d,more » electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.« less

  2. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    SciTech Connect

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.

  3. Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

    SciTech Connect

    Wang, Qi; Bi, Cheng; Huang, Jinsong

    2015-05-06

    We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

  4. Conductive surface modification of LiFePO4 with nitrogen doped carbon layers for lithium-ion batteries

    SciTech Connect

    Yoon, Sukeun; Liao, Chen; Sun, Xiao-Guang; Bridges, Craig A; Unocic, Raymond R; Nanda, Jagjit; Dai, Sheng; Paranthaman, Mariappan Parans

    2012-01-01

    The LiFePO4 rod surface modified with nitrogen doped carbon layer has been prepared using hydrothermal processing followed by post-annealing in the presence of an ionic liquid. The coated LiFePO4 rod exhibits good capacity retention and high rate capability as the nitrogen doped carbon improves conductivity and prevents aggregation of the rod during cycling.

  5. Formation of manganese {delta}-doped atomic layer in wurtzite GaN

    SciTech Connect

    Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R.

    2012-09-01

    We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

  6. Density of states determination in organic donor-acceptor blend layers enabled by molecular doping

    NASA Astrophysics Data System (ADS)

    Fischer, Janine; Ray, Debdutta; Kleemann, Hans; Pahner, Paul; Schwarze, Martin; Koerner, Christian; Vandewal, Koen; Leo, Karl

    2015-06-01

    Charge carrier transport is a key parameter determining the efficiency of organic solar cells, and is closely related to the density of free and trapped states. For trap characterization, impedance spectroscopy is a suitable, non-invasive method, applicable to complete organic semiconductor devices. In order to contribute to the capacitive signal, the traps must be filled with charge carriers. Typically, trap filling is achieved by illuminating the device or by injecting charge carriers through application of a forward bias voltage. However, in both cases, the exact number of charge carriers in the device is not known and depends strongly on the measurement conditions. Here, hole trap states of the model blend layer ZnPc:C60 are filled by weak p-doping, enabling trap characterization in a blend layer at a controlled hole density. We evaluate impedance spectra at different temperatures in order to determine the density of occupied states (DOOS) directly from the capacitance-frequency spectra by assuming a simple energy diagram. The reconstructed DOOS distribution is analyzed at different doping concentrations and device thicknesses and compared to thermally stimulated current measurements performed on the same devices. In both methods, a pronounced Gaussian peak at about 0.4 eV below the transport level is found as well as deep, exponential tail states, providing a deeper insight into the density of states distribution of this donor-acceptor blend layer. Additionally, the effect of doping-induced trap filling on the solar cell characteristics is studied in these devices.

  7. Electrical conductivity of reconstructed Si(111) surface with sodium-doped C{sub 60} layers

    SciTech Connect

    Tsukanov, D. A. Saranin, A. A.; Ryzhkova, M. V.; Borisenko, E. A.; Zotov, A. V.

    2015-01-05

    Electrical conductance of sodium-doped C{sub 60} ultra-thin layers (1–6 monolayers) grown on the Na-adsorbed Si(111)√3 × √3-Au surface has been studied in situ by four-point probe technique, combined with low-energy electron diffraction observations. Evidence of conductance channel formation through the C{sub 60} ultrathin layer is demonstrated as a result of Na dosing of 3 and 6 monolayers thick C{sub 60} layers. The observed changes in surface conductivity can be attributed to the formation of fulleride-like NaC{sub 60} and Na{sub 2}C{sub 60} compound layers.

  8. Diagnostics of Si multi-δ-doped GaAs layers by Raman spectroscopy on bevelled structures

    NASA Astrophysics Data System (ADS)

    Srnanek, R.; Gurnik, P.; Harmatha, L.; Gregora, I.

    2001-11-01

    A new procedure for determination of the doping spikes location and the spatial extent of dopants in Si single and multi-δ-doped layers by micro-Raman spectroscopy is presented. The procedure is based on the evaluation of ITO/ ILO intensities along the bevelled structure. The obtained values of Si extent from 4.0 to 4.5 nm are in good coincidence with values presented in the literature. After calibration, the procedure will be suitable for direct estimation of dopant profiles in δ-doped layers in semiconductor materials, where a bevel through the structures can be prepared.

  9. Single layer graphene band hybridization with silver nanoplates: Interplay between doping and plasmonic enhancement

    NASA Astrophysics Data System (ADS)

    Syed, Salmaan R.; Lim, Guh-Hwan; Flanders, Stuart J.; Taylor, Adam B.; Lim, Byungkwon; Chon, James W. M.

    2016-09-01

    In this paper, we report single layer graphene (SLG) hybridized with silver nanoplates, in which nanoplates act as either a charge doping or a field enhancement source for the SLG Raman spectrum. Surprisingly, the stiffening of both G and 2D peaks of more than 10 cm-1 was observed with no plasmonic enhancement of peaks, indicating that p-doping from nanoplates on SLG is occurring. Such observation is explained in terms of the contact separation distance between the graphene and the silver nanoplates being enough (˜4 Å) to cause a Fermi level shift in graphene to allow p-doping. When nanoplates were modified in shape with laser irradiation by either photothermal plasmon printing or laser induced ablation, the charge doping was lifted and the strong plasmonic enhancement of Raman signals was observed, indicating that the separation distance is increased. Further, when the nanoplates are oxidized, the two effects on the Raman bands of SLG are turned off, returning the Raman signals back to the original SLG state.

  10. Hydrogen storage in Li-doped fullerene-intercalated hexagonal boron nitrogen layers

    NASA Astrophysics Data System (ADS)

    Cheng, Yi-Han; Zhang, Chuan-Yu; Ren, Juan; Tong, Kai-Yu

    2016-10-01

    New materials for hydrogen storage of Li-doped fullerene (C20, C28, C36, C50, C60, C70)-intercalated hexagonal boron nitrogen ( h-BN) frameworks were designed by using density functional theory (DFT) calculations. First-principles molecular dynamics (MD) simulations showed that the structures of the C n -BN ( n = 20, 28, 36, 50, 60, and 70) frameworks were stable at room temperature. The interlayer distance of the h-BN layers was expanded to 9.96-13.59 Å by the intercalated fullerenes. The hydrogen storage capacities of these three-dimensional (3D) frameworks were studied using grand canonical Monte Carlo (GCMC) simulations. The GCMC results revealed that at 77 K and 100 bar (10 MPa), the C50-BN framework exhibited the highest gravimetric hydrogen uptake of 6.86 wt% and volumetric hydrogen uptake of 58.01 g/L. Thus, the hydrogen uptake of the Li-doped C n -intercalated h-BN frameworks was nearly double that of the non-doped framework at room temperature. Furthermore, the isosteric heats of adsorption were in the range of 10-21 kJ/mol, values that are suitable for adsorbing/desorbing the hydrogen molecules at room temperature. At 193 K (-80 °C) and 100 bar for the Li-doped C50-BN framework, the gravimetric and volumetric uptakes of H2 reached 3.72 wt% and 30.08 g/L, respectively.

  11. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus.

    PubMed

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A H Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-12

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm(2) V(-1) s(-1) after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  12. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

    NASA Astrophysics Data System (ADS)

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A. H. Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-01

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm2 V-1 s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  13. White light emission from GaN stack layers doped by different rare-earth metals

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Liu, Chang

    2015-02-01

    Experimental progress of electroluminescence devices (ELDs) employing GaN doped with rare-earth metals had been significantly made targeting RGB displays. However, reports on the theoretical models to design the devices and the applications were limited. Our previous paper proposed a device model using the quantum collision theory and Judd-Ofelt approximation to design the ELDs for white light illumination. In the present study, the model is modified by considering the light extraction efficiency and optical loss during propagating in the films. To improve the luminous efficiency, an ELD with three stack layers of GaN:Tm/GaN:Er/GaN:Eu is proposed and designed. The model predicts that the color of the integrated light can be controlled by applied voltage, thickness of each doping layer and doping concentrations of the rare earth metals. The luminous efficacy of white light emission at a bias of -100 V is calculated to be 274 lm/W, which is much higher than that of fluorescent lumps. The proposed ELD will open a door to efficient solid-state lighting.

  14. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Pointet, J.; Gonon, P.; Bsiesy, A.; Vallée, C.; Jomni, F.

    2016-06-01

    Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO2 rutile films which are deposited on RuO2 by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz-100 kHz range, for ac electric fields up to 1 MVrms/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreases the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MVrms/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.

  15. Enhancement of carrier mobility in thin Ge layer by Sn co-doping

    NASA Astrophysics Data System (ADS)

    Prucnal, S.; Liu, F.; Berencén, Y.; Vines, L.; Bischoff, L.; Grenzer, J.; Andric, S.; Tiagulskyi, S.; Pyszniak, K.; Turek, M.; Drozdziel, A.; Helm, M.; Zhou, S.; Skorupa, W.

    2016-10-01

    We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.

  16. Superresolution Structure Optical Disk with Semiconductor-Doped Glass Mask Layer Containing CdSe Nanoparticles

    NASA Astrophysics Data System (ADS)

    Yeh, Tung‑Ti; Wang, Jr‑Hau; Hsieh, Tsung‑Eong; Shieh, Han‑Ping D.

    2006-02-01

    In this work, we demonstrate a distinct superresolution phenomenon and signal properties of an optical disk with a semiconductor-doped glass (SDG) mask layer containing CdSe nanoparticles. It was found that the 69 nm marks could be consistently retrieved at reading power (Pr) = 4 mW with carrier-to-noise ratio (CNR) = 13.56 dB. The signals were clearly resolved with CNRs nearly equal to 40 dB at Pr=4 mW when the recorded marks were larger than 100 nm. The cyclability test indicated that the CdSe-SiO2 SDG layer might serve as a stable and reliable optical mask layer in 105 readout cycles.

  17. The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Moghaddam, Saeed; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.

    2014-08-18

    Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  18. Manufacture of silicon-based devices having disordered sulfur-doped surface layers

    DOEpatents

    Carey, III, James Edward; Mazur, Eric

    2008-04-08

    The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

  19. Improving the performance of perovskite solar cells with glycerol-doped PEDOT:PSS buffer layer

    NASA Astrophysics Data System (ADS)

    Jian-Feng, Li; Chuang, Zhao; Heng, Zhang; Jun-Feng, Tong; Peng, Zhang; Chun-Yan, Yang; Yang-Jun, Xia; Duo-Wang, Fan

    2016-02-01

    In this paper, we investigate the effects of glycerol doping on transmittance, conductivity and surface morphology of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate)) (PEDOT:PSS) and its influence on the performance of perovskite solar cells. . The conductivity of PEDOT:PSS is improved obviously by doping glycerol. The maximum of the conductivity is 0.89 S/cm when the doping concentration reaches 6 wt%, which increases about 127 times compared with undoped. The perovskite solar cells are fabricated with a configuration of indium tin oxide (ITO)/PEDOT:PSS/CH3NH3PbI3/PC61BM/Al, where PEDOT:PSS and PC61BM are used as hole and electron transport layers, respectively. The results show an improvement of hole charge transport as well as an increase of short-circuit current density and a reduction of series resistance, owing to the higher conductivity of the doped PEDOT:PSS. Consequently, it improves the whole performance of perovskite solar cell. The power conversion efficiency (PCE) of the device is improved from 8.57% to 11.03% under AM 1.5 G (100 mW/cm2 illumination) after the buffer layer has been modified. Project supported by the National Natural Science Foundation of China (Grant Nos. 61264002, 61166002, 91333206, and 51463011), the Natural Science Foundation of Gansu Province, China (Grant No. 1308RJZA159), the New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0840), the Research Project of Graduate Teacher of Gansu Province, China (Grant No. 2014A-0042), and the Postdoctoral Science Foundation from Lanzhou Jiaotong University, China.

  20. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly. PMID:26789206

  1. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly.

  2. Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2.

    PubMed

    Kaushik, Naveen; Karmakar, Debjani; Nipane, Ankur; Karande, Shruti; Lodha, Saurabh

    2016-01-13

    We demonstrate a low and constant effective Schottky barrier height (ΦB ∼ 40 meV) irrespective of the metal work function by introducing an ultrathin TiO2 ALD interfacial layer between various metals (Ti, Ni, Au, and Pd) and MoS2. Transmission line method devices with and without the contact TiO2 interfacial layer on the same MoS2 flake demonstrate reduced (24×) contact resistance (RC) in the presence of TiO2. The insertion of TiO2 at the source-drain contact interface results in significant improvement in the on-current and field effect mobility (up to 10×). The reduction in RC and ΦB has been explained through interfacial doping of MoS2 and validated by first-principles calculations, which indicate metallic behavior of the TiO2-MoS2 interface. Consistent with DFT results of interfacial doping, X-ray photoelectron spectroscopy (XPS) data also exhibit a 0.5 eV shift toward higher binding energies for Mo 3d and S 2p peaks in the presence of TiO2, indicating Fermi level movement toward the conduction band (n-type doping). Ultraviolet photoelectron spectroscopy (UPS) further corroborates the interfacial doping model, as MoS2 flakes capped with ultrathin TiO2 exhibit a reduction of 0.3 eV in the effective work function. Finally, a systematic comparison of the impact of selective doping with the TiO2 layer under the source-drain metal relative to that on top of the MoS2 channel shows a larger benefit for transistor performance from the reduction in source-drain contact resistance.

  3. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  4. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    NASA Astrophysics Data System (ADS)

    Li, X.; Bergsten, J.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Rorsman, N.; Janzén, E.; Forsberg, U.

    2015-12-01

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 1018 cm-3) epitaxial layer closest to the substrate and a lower doped layer (3 × 1016 cm-3) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 1018 cm-3) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  5. Enhancement of optical nonlinearity of LCs with gold-nanoparticle-doped alignment layers

    NASA Astrophysics Data System (ADS)

    Lin, Hui-Chi; Fuh, Andy Y. G.; Lin, Ci-Yong; Li, Ming-Shian

    2013-05-01

    In this study, the optical nonlinearity of LCs with cell substrates coated with gold-nanoparticle (AuNP) -doped PVA alignment layers were examined using the Z-scan technique. The results show that the nonlinear refractive index n2 of the sample is enhanced by the gold nanoparticles doped in the alignment layers, because of the thermal effect of the absorption by the surface of the sample through the localized surface plasmon resonance (LSPR) of the gold nanoparticles. As the concentration of AuNPs in the alignment layers of the LC sample increases, the thermal effect of the LSPR increases, and |n2| observably increases. Furthermore, the self-defocusing effect (n2<0) of the sample can be modulated by the application of an external voltage, and a self-focusing effect (n2<0) can be observed when samples are illuminated by a high-intensity laser with the application of a high voltage. Therefore, the magnitude and the sign of n2 of the sample can be modulated by combining the applied electric field and the optical field.

  6. Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

    NASA Astrophysics Data System (ADS)

    Xie, Haiting; Wu, Qi; Xu, Ling; Zhang, Lei; Liu, Guochao; Dong, Chengyuan

    2016-11-01

    The amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with the double-stacked channel layers (DSCL) combing the amorphous InZnO (a-IZO) films and the nitrogen-doped amorphous InGaZnO (a-IGZO:N) films were proposed and fabricated, which showed the excellent performance with the field-effect mobility of 49.6 cm2 V-1 s-1 and the subthreshold swing of 0.5 V/dec. More interestingly, very stable properties were observed in the bias stress and light illumination tests for these a-IZO/a-IGZO:N TFTs, as seemed to be the evident improvements over the prior arts. The improved performance and stability might be mainly due to the hetero-junctions in the channel layers and less interface/bulk trap density from the in situ nitrogen doping process in the a-IGZO layers. In addition, the passivation effect of the a-IGZO:N films also made some contributions to the stable properties exhibited in these novel DSCL TFTs.

  7. Half Metallic Digital Ferromagnetic Heterostructure Composed of a (Delta)-doped Layer of Mn in Si

    SciTech Connect

    Qian, M C; Fong, C Y; Liu, K; Pickett, W E; Pask, J E; Yang, L H

    2006-05-30

    The authors propose and investigate the properties of a digital ferromagnetic heterostructure (DFH) consisting of a {delta}-doped layer of Mn in Si, using ab initio electronic-structure methods. They find that (1) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (2) the heterostructure is a two-dimensional half metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. Analysis of the total and partial densities of states, band structure, Fermi surfaces and associated charge density reveals the marked two-dimensional nature of the half metallicity. The band lineup is found to be favorable for retaining the half metal character to near the Curie temperature (T{sub C}). Being Si based and possibly having a high T{sub C} as suggested by an experiment on dilutely doped Mn in Si, the heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.

  8. Manganese oxide nanowires wrapped with nitrogen doped carbon layers for high performance supercapacitors.

    PubMed

    Li, Ying; Mei, Yuan; Zhang, Lin-Qun; Wang, Jian-Hai; Liu, An-Ran; Zhang, Yuan-Jian; Liu, Song-Qin

    2015-10-01

    In this study, manganese oxide nanowires wrapped by nitrogen-doped carbon layers (MnO(x)@NCs) were prepared by carbonization of poly(o-phenylenediamine) layer coated onto MnO2 nanowires for high performance supercapacitors. The component and structure of the MnO(x)@NCs were controlled through carbonization procedure under different temperatures. Results demonstrated that this composite combined the high conductivity and high specific surface area of nitrogen-doped carbon layers with the high pseudo-capacitance of manganese oxide nanowires. The as-prepared MnO(x)@NCs exhibited superior capacitive properties in 1 M Na2SO4 aqueous solution, such as high conductivity (4.167×10(-3) S cm(-1)), high specific capacitance (269 F g(-1) at 10 mV s(-1)) and long cycle life (134 F g(-1) after 1200 cycles at a scan rate of 50 mV s(-1)). It is reckoned that the present novel hybrid nanowires can serve as a promising electrode material for supercapacitors and other electrochemical devices.

  9. Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

    SciTech Connect

    Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen

    2011-11-15

    In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

  10. Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

    SciTech Connect

    Wan, Zhixin; Kwack, Won-Sub; Lee, Woo-Jae; Jang, Seung-II; Kim, Hye-Ri; Kim, Jin-Woong; Jung, Kang-Won; Min, Won-Ja; Yu, Kyu-Sang; Park, Sung-Hun; Yun, Eun-Young; Kim, Jin-Hyock; Kwon, Se-Hun

    2014-09-15

    Highlights: • Ti doped ZnO films were prepared on Corning XG glass substrate by ALD. • The electrical properties and optical properties were systematically investigated. • An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance. - Abstract: Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10{sup −3} Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.

  11. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  12. Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

    SciTech Connect

    An Jihwan; Beom Kim, Young; Sun Park, Joong; Hyung Shim, Joon; Guer, Turgut M.; Prinz, Fritz B.

    2012-01-15

    The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals.

  13. On the radiation resistance of planar Gunn diodes with δ-doped layers

    SciTech Connect

    Obolenskaya, E. S. Churin, A. Yu.; Obolensky, S. V.; Murel, A. V.; Shashkin, V. I.

    2015-11-15

    The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of δ layers of doping impurities contributes to the higher radiation resistance of planar diodes by an order of magnitude compared to conventional Gunn diodes. The results of this study make it possible to formulate methodical guidelines to reduce the amount of computational and experimental studies without a considerable decrease in their informativity.

  14. Delayed electroluminescence of doped fluorescent aingle layer organic light-emitting devices.

    PubMed

    Zhang, Yanfei; Zhao, Suling; Xu, Zheng; Kong, Chao

    2014-05-01

    Doped single-layer polymer OLEDs consisting of PVK: (TPB, C545T, Rubrene or DCJTB) were prepared. By applying high-frequency electric pulse of 0.5 micros pulse width to each device, we observed various delayed electroluminescence after withdrawing the forward bias. The order of magnitude of fitting life time ranges from hundreds of nanoseconds to several milliseconds. Current density-voltage and brightness-voltage characteristics reveals charge trapped on guest sites initially before released. Subsequently, the recombination of these trapped charges is strongly involved in the origin of delayed electroluminescence. PMID:24734573

  15. Ion beam fabrication of aluminum-doped zinc oxide layer for high-performance liquid crystals alignment.

    PubMed

    Liu, Yang; Lee, Ju Hwan; Seo, Dae-Shik

    2016-07-25

    In this paper, a 1.8 keV ion beam (IB) sputtered thin layer of aluminum-doped zinc oxide (AZO) with columnar AZO bumps covering the surface working as an alignment layer for the homogeneous alignment of liquid crystals (LC) is investigated. Bumpy AZO alignment layers in twisted nematic (TN) cells generated larger LC pre-tilt angles and thus enabled accelerated switching of LC, and the highly conductive bumpy AZO thin layers allowed super-fast release of accumulated charges, and led to low residual DC performance. These results indicate the promising applications of AZO bumps layer as alignment layer in LC devices. PMID:27464189

  16. Photocatalytic Hydrogen Production over Chromium Doped Layered Perovskite Sr2TiO4.

    PubMed

    Sun, Xiaoqin; Xie, Yinghao; Wu, Fangfang; Chen, Hongmei; Lv, Meilin; Ni, Shuang; Liu, Gang; Xu, Xiaoxiang

    2015-08-01

    Layered semiconductor photocatalysts have been found to exhibit promising performance levels, probably linked to their interlayer framework that facilitates separation of charge carriers and the reduction/oxidation reactions. Layered titanates, however, generally demonstrate activities under UV irradiation, and therein lies the strong desire to extend their activity into the visible light region. Here, we investigated a series of layered perovskite by doping Sr2TiO4 with Cr and/or La in the hope to improve their visible light responses. Their crystal structures and other physicochemical properties were systematically explored. Our results show that La and Cr can be successfully accommodated in the layered structure and Cr is an efficient dopant for the extension of visible light absorbance. Much enhanced photocatalytic hydrogen evolution was observed after doping and was found to be composition-dependent. The highest hydrogen production rate approaches 97.7 μmol/h for Sr2Ti0.95Cr0.05O4-δ under full range irradiation (λ ≥ 250 nm) and 17 μmol/h for Sr2Ti0.9Cr0.1O4-δ under visible light irradiation (λ ≥ 400 nm), corresponding to an apparent quantum efficiency of 0.16% and 0.05%, respectively. Theoretical calculation reveals that the improved optical and photocatalytic properties are owing to a newly formed spin-polarized valence band from Cr 3d orbitals. The decreased unit cell parameters, reduced band gaps as well as anisotropic properties of layered architectures are likely the reasons for a better activity. Nevertheless, instability of these compounds in the presence of moisture and CO2 was also noticed, suggesting that protective atmospheres are needed for the storage of these photocatalysts.

  17. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  18. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  19. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications. PMID:27639580

  20. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  1. Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering

    PubMed Central

    Jung, Min-Cherl; Raga, Sonia R.; Ono, Luis K.; Qi, Yabing

    2015-01-01

    We fabricated perovskite solar cells using a triple-layer of n-type doped, intrinsic, and p-type doped 2,2′,7,7′-tetrakis(N,N′-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) (n-i-p) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n-type doped spiro-OMeTAD was optimized to adjust the highest occupied molecular orbital of spiro-OMeTAD to match the valence band maximum of perovskite for efficient hole extraction while maintaining a high open circuit voltage. Time-dependent solar cell performance measurements revealed significantly improved air stability for perovskite solar cells with the n-i-p structured spiro-OMeTAD HTL showing sustained efficiencies even after 840 h of air exposure. PMID:25985417

  2. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    PubMed

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material. PMID:26960451

  3. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    PubMed

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material.

  4. Solution doped preform with improved uniformity and concentration using dual-layer soot deposition

    NASA Astrophysics Data System (ADS)

    Muhd-Yassin, S. Z.; Omar, Nasr Y. M.; Mat-Sharif, K. A.; Zulkifli, M. I.; Safar, M. H.; Aljamimi, S. M.; Yusoff, Z.; Emami, S. D.; Paul, M. C.; Abdul-Rashid, H. A.

    2016-03-01

    A new method of soot deposition to improve the characteristics of a solution-doped optical fibre preform is reported. The soot was generated using a modified chemical vapour deposition (MCVD) technique. A better longitudinal uniformity of the core refractive index profile and a higher degree of dopant incorporation were obtained when two layers of soot were deposited in the core. These improvements were further extended by depositing each layer at different temperatures. A variation of 0.15 × 10-2 (%RSD 3.5%) in the refractive index difference along 23 cm of the preform and a core-to-cladding refractive index difference of approximately 0.012 were achieved using a 1.2 M AlCl3 solution.

  5. Influence of encapsulation temperature on Ge:P {delta}-doped layers

    SciTech Connect

    Scappucci, G.; Simmons, M. Y.; Capellini, G.

    2009-12-15

    We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P {delta}-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the {delta} layer. We demonstrate that a step-flow growth achieved at {approx}530 deg. C provides the best compromise between high crystal quality and minimal dopant redistribution, with an electron mobility {approx}128 cm{sup 2}/Vs at a carrier density 1.3x10{sup 14} cm{sup -2}, and a 4.2 K phase coherence length of {approx}180 nm.

  6. The effects of doping layer location on the electronic and optical properties of GaN step quantum well

    NASA Astrophysics Data System (ADS)

    Dakhlaoui, Hassen

    2016-09-01

    In the present work, the intersubband transition and the optical absorption coefficient between the ground and the first excited states in the Si-δ-doped step AlGaN/GaN quantum well were theoretically studied by solving Schrödinger-Poisson equations self-consistently within the framework of effective mass approximation. The delta-doped layer was inserted in three different locations (middle of the quantum well, middle of the step quantum well and middle of the left barrier). The obtained results show that the energy difference between the ground and the first excited state and the optical absorption depend not only on the doping layer concentration but also on its location. The shape of the confining potential and the wavefunctions were also changed depending on the doped layer location. It was found that doping in the middle quantum well is advantageous to obtain an optical absorption with a higher energy separation; however, doping in the left barrier gives us an optical absorption with a lower energy separation. The obtained results in optical absorption give us a new degree of freedom in optoelectronic devices based on intersubband transitions.

  7. Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Kaur, Ramneek; Kaur, Jagdish; Tripathi, S. K.

    2015-07-01

    Resistive memory devices based on nanocomposites have attracted great potential for future applications in electronic and optoelectronic devices. The successful synthesis of aqueous CdSe nanoparticles has been provided with UV-Vis and Photoluminescence spectroscopy. The two terminal planar devices of CdSe nanocomposite have been fabricated. The effect of Ag doping and additional dielectric buffer layers on the memory devices have been studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The devices show hysteresis loops in both positive and negative bias directions. The memory window has been found to be increased with both Ag doping and PVA layer addition. The charge carrier transport mechanism in the memory devices has been studied by fitting the I-V characteristics with the theoretical model, Space charge conduction model (SCLC). C-V hysteresis loop in both positive and negative bias directions indicate that both the electrons and holes are responsible for memory mechanism of the devices. The switching mechanism of the memory devices has been explained by charge trapping/detrapping model. The retention characteristics show good stability and reliability of the devices.

  8. Layer-by-layer assembly of multifunctional porous N-doped carbon nanotube hybrid architectures for flexible conductors and beyond.

    PubMed

    Zhao, Songfang; Gao, Yongju; Li, Jinhui; Zhang, Guoping; Zhi, Chunyi; Deng, Libo; Sun, Rong; Wong, Ching-Ping

    2015-04-01

    Coassemble diverse functional nanomaterials with carbon nanotubes (CNTs) to form three-dimensional (3D) porous CNTs hybrid architectures (CHAs) are potentially desirable for applications in energy storage, flexible conductors, and catalysis, because of diverse functionalities and synergistic effects in the CHAs. Herein, we report a scalable strategy to incorporate various functional nanomaterials with N-doped CNTs (N-CNTs) into such 3D porous CHAs on the polyurethane (PU) sponge skeletons via layer-by-layer (LbL) assembly. To investigate their properties and applications, the specific CHAs based on N-CNTs and Ag nanoparticles (NPs), denoted as PU-(N-CNTs/Ag NPs)n, are developed. The unique binary structure enables these specific CHAs conductors to possess reliable mechanical and electrical performance under various elastic deformations as well as excellent hydrophilicity. Moreover, they are employed as strain-gauge sensor and heterogeneous catalyst, respectively. The sensor could detect continuous signal, static signal, and pulse signal with superior sustainability and reversibility, indicating an important branch of electromechanical devices. Furthermore, the synergistic effects among N-CNTs, Ag NPs, and porous structure endow the CHAs with excellent performance in catalysis. We have a great expectation that LbL assembly can afford a universal route for incorporating diverse functional materials into one structure. PMID:25749434

  9. Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

    SciTech Connect

    Islam, A. Z. M. Touhidul; Jung, D. W.; Noh, J. P.; Otsuka, N.

    2009-05-01

    Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

  10. Doping effects in p- and n-type layers of 390-nm InGaN DQW lasers

    NASA Astrophysics Data System (ADS)

    Alahyarizadeh, Gh.; Amirhoseiny, M.; Hassan, Z.

    2015-06-01

    The performance characteristics of deep violet InGaN laser diodes (LDs) are theoretically studied with the effects of doping concentrations in p- and n-type layers. Comprehensive study on output performance characteristics such as output power, threshold current, slope efficiency, DQE, and optical intensity, as well as on several internal parameters such as quantum well (QW) carrier densities, electron and hole current densities of deep violet InGaN double quantum well (DQW) lasers, have been done. The simulation results indicate that output power of LD is increased by increasing doping concentration in both n- and p-type layers. it can be due to increased carrier current densities and consequently increased radiative recombination. The results also indicate decrease in slope efficiency and DQE with increasing doping concentration. This situation can be caused by increasing nonradiative recombinations, such as Auger recombination inside and outside the active region, current overflow from the active region, and optical losses. Increasing current overflow from the active region also causes an increase in threshold current. Using higher doping concentration in n-type layers results in increase in electron current density in the n-side and consequently, higher electron flow in the active region. It causes an increase in higher radiative recombination and a higher need for holes and consequently, a higher hole current density in p-type layers. As well as, optical intensity of LDs is increased by increasing the doping concentration.

  11. Fabrication of N-doped TiO2 coatings on nanoporous Si nanopillar arrays through biomimetic layer by layer mineralization.

    PubMed

    Yan, Yong; Wang, Dong; Schaaf, Peter

    2014-06-14

    Si/N-doped TiO2 core/shell nanopillar arrays with a nanoporous structure are fabricated through a simple protein-mediated TiO2 deposition process. The Si nanopillar arrays are used as templates and alternatively immersed in aqueous solutions of catalytic molecules (protamine, PA) and the titania precursor (titanium(iv) bis(ammonium lactato)dihydroxide, Ti-BALDH) for the layer by layer mineralization of a PA/TiO2 coating. After a subsequent calcination, a N-doped TiO2 layer is formed, and its thickness could be controlled by varying the cycles of deposition. Moreover, the nanoporous structure of the Si nanopillars strongly affects the formation of the TiO2 layer. The obtained Si/TiO2 nanocomposites show significantly improved solar absorption compared with commercially purchased TiO2 nanoparticles.

  12. The Radar Effects of Perchlorate-Doped Ice in the Martian Polar Layered Deposits

    NASA Astrophysics Data System (ADS)

    Stillman, D.; Winebrenner, D. P.; Grimm, R. E.; Pathare, A.

    2010-12-01

    The presence of perchlorate in soil at near-polar latitudes on Mars suggests that dust in the ice of the North Polar Layered Deposits (NPLD) may introduce perchlorate impurities to that ice. Because eutectic temperatures of perchlorate salts range as low as 206 K (for magnesium perchlorate), perchlorate doping of NPLD ice may result in grain-scale liquid veins and softening of ice rheology at temperatures comparable to those computed for the base of the NPLD in the present climate. Any such softening would be important for understanding how processes including ice flow have shaped the NPLD. Observable consequences of such softening, or of the combination of perchlorate doping and temperatures that could cause softening, are thus similarly important. In particular, the dielectric properties of perchlorate-laden ice in a temperature gradient will change relatively rapidly at the point in the gradient near the eutectic temperature. Here we investigate the radar reflectivity of such a eutectic transition in ice with a model in which perchlorate concentration is constant and temperature varies linearly with depth in the ice. We have conducted measurements of the complex permittivity of Mg and Na perchlorate-doped ice over a range of temperatures (183 - 273 K) and concentrations. Below the eutectic temperature, the perchlorate-doped ice has electrical properties similar to that of choride-doped ice. However, above the eutectic temperature, some of the ice melts forming liquid at triple junctions. At concentrations above 3 mM, the liquid at triple junctions become connected forming brine channels, which greatly increase the dc conductivity and radar attenuation. At concentrations below 3 mM, the liquid at triple junctions are not connected and do not affect the dc conductivity. However, the liquid H2O molecules are able to rotate their permanent dipole at radar frequencies, thus causing an increase in radar attenuation. The MARSIS and SHARAD attenuation rates increase

  13. Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

    SciTech Connect

    Wang, Chenggong; Wang, Congcong; Kauppi, John; Liu, Xiaoliang; Gao, Yongli

    2015-08-28

    Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

  14. Estimating convective boundary layer parameters for diffusion applications. Final report

    SciTech Connect

    Weil, J.

    1983-04-01

    Simple methods are presented for estimating those boundary layer parameters most important in controlling turbulence and diffusion within the convective boundary layer (CBL). These parameters include: surface heat flux, friction velocity, mean wind speed, and boundary layer height. Emphasis is on estimation methods requiring only routinely available data such as may exist at local airports. We focus on the CBL because the main diffusion application of interest is tall stacks, which generally produce their highest ground-level concentrations during convective conditions.

  15. Crystalline Fraction and Doping Concentration Effect on Heterojunction Solar Cells n-Doped µc-Si:H Back Surface Field Layer.

    PubMed

    Kim, Sangho; Shin, Chonghoon; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    The back surface field (BSF) plays a vital role for high efficiency in the Heterojunction Intrinsic Thin (HIT) film solar cell. This paper investigated the effect of crystalline volume fraction (Xc) and 1% hydrogen diluted phosphine (PH3) gas doping concentration of the n-type µc-Si:H back surface file (BSF) layer. Initially, the thickness of the n-type µc-Si:H BSF layer was optimized. With increase in Xc from 6% to 59%, the open circuit voltage (Voc) increased from 573 mV to 696 mV, and the fill factor (FF) also increased from 59% to 71%. In the long wavelengths region (≥ 950 nm), the QE of the solar cells decreased over the optimized Xc of the n-doped micro BSF layer, due to the defects of a film. In the second part of this paper, the effect of high conductivity n-type µc-Si:H BSF layer with optimized thickness on the performance of HIT solar cells was investigated, by doping gas ratio variation. Even though Xc decreased, conductivity was increased, with increasing PH3 doping concentration. Under the optimized condition, a n-µc-Si:H BSF layer has a dark conductivity of 2.59 S/cm, activation energy of 0.0519 eV, and X, of 52%. The conversion efficiency of 18.9% was achieved with a Voc of 706 mV, fill factor of 72%, and short circuit current density of 37.1 mW·cm(-2).

  16. Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wang, Aiji; Chen, Tingfang; Lu, Shuhua; Wu, Zhenglong; Li, Yongliang; Chen, He; Wang, Yinshu

    2015-02-01

    Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue-shifting of the UV emission which is sensitive to annealing atmosphere. Al doping induces the film growing with its c-axis parallel to the substrate surface. It also introduces non-radiative centers and weakens the UV emission. Al doping widens the film bandgap, which has a quadratic dependence on Al content. Al doping decreases the film resistivity to 5.3 × 10-3 Ω · cm. Annealing has little effect on photoluminescence of the doped films, but it degrades undoped and doped ZnO film conductivity dramatically; and the degradation depends on the annealing ambient.

  17. Improving rate capability and decelerating voltage decay of Li-rich layered oxide cathodes via selenium doping to stabilize oxygen

    NASA Astrophysics Data System (ADS)

    Ma, Quanxin; Li, Ruhong; Zheng, Rujuan; Liu, Yuanlong; Huo, Hua; Dai, Changsong

    2016-11-01

    To improve the rate performance and decelerate the voltage decay of Li-rich layered oxide cathode materials, a series of cathode materials Li1.2[Mn0.7Ni0.2Co0.1]0.8-xSexO2 (x = 0, 0.07, 0.14 and 0.21) was synthesized via co-precipitation. Based on the characterization results, it can be concluded that uniform Se6+ doping can improve the degree of crystallinity of Li2MnO3, resulting in a better ordering of atoms in the transition metal layer of this type of cathode materials. In the electrochemical experiments, compared to un-doped samples, one of the Se doped samples (LLMO-Se0.14) exhibited a longer sloping region and shorter potential plateau in the initial charge curves, a larger first coulombic efficiency (ca. 77%), better rate capability (178 mAhm g-1 at 10 C) and higher mid-point voltage (MPV) retention (ca. 95%) after 100 cycles. These results prove that Se doping can effectively improve the rate capability and decelerate the voltage decay process of these cathode materials during cycling via suppressing the oxidation process of O2- to O2 and curbing a layered-to-spinel phase transformation. The above-mentioned functions of Se doping are probably due to the higher bonding energy of Sesbnd O than that of Mnsbnd O.

  18. Final Technical Report: Grain Boundary Complexions and Transitions in Doped Silicon

    SciTech Connect

    Jian Luo

    2012-10-15

    This four-year research project has advanced the fundamental knowledge of grain boundary (GB) complexions (i.e., "two-dimensional interfacial phases") and associated GB "phase" transitions in several grounds. First, a bilayer interfacial phase, which had been directly observed by microscopy only in complex ceramic systems in prior studies, has been identified in simpler systems such as Au-doped Si and Bi-doped Ni in this study, where the interpretations of the their formation mechanisms and microscopic images are less equivocal. Second, convincing evidence for the existence of a first-order GB transition from a nominally "clean" GB to a bilayer adsorption interfacial phase has been revealed for Au-doped Si; the confirmation of the first-order nature of interfacial transitions at GBs, which was rare in prior studies, is scientifically significant and technologically important. Third, the bilayer interfacial phase discovered in Bi-doped Ni has been found to be the cause of the mysterious liquid metal embrittlement phenomenon in this system; the exact atomic level mechanism of this phenomenon has puzzled the materials and physics communities for over a century. Finally, significant advancements have been made to establish phenomenological thermodynamic models for GB complexions and transitions. Since GB complexions can control the transport, mechanical and physical properties of a broad range of metallic and ceramic materials, the fundamental knowledge generated by this project can have broad impacts on materials design in general. In this regard, understanding and controlling GB phase behaviors (complexions and transitions) can be an important component for the "Materials Genome" project.

  19. Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

    SciTech Connect

    Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M.; Sawano, Kentarou

    2015-09-28

    We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

  20. Fabrication of Beryllium Capsules with Copper-Doped Layers for NIF Targets: A Progress Report

    SciTech Connect

    McElfresh, M; Gunther, J; Alford, C; Fought, E; Cook, R; Nikroo, A; Xu, H; Cooley, J C; Field, R D; Hackenberg, R E; Nobile, A

    2005-08-12

    The sputtering of beryllium (Be) has been used at LLNL for nearly 30 years in the fabrication of laser targets. Several years ago the prospect of using sputtering to fabricate spherical Be capsules for National Ignition Facility (NIF) targets began to be explored and a basic strategy was developed that involved sputtering down onto plastic mandrels bouncing in a pan. While this appears to be very straightforward in principle, in practice sputtering has been used almost exclusively to make thin films (< 1 micron) on flat substrates. Thick films pose a significant challenge for sputtering while materials on spherical substrates are essentially unexplored. More recently, based on computational results, the point design for the first NIF ignition target capsule was specified as a Be capsule with Cu-doped layers of specific thickness, each layer with a different concentration of copper. While the work described here was motivated by the need to make the layered capsules, the primary progress on Be capsules has been the development of a more complete metallurgical understanding of the materials that are fabricated and the beginning of the exploration of the relationship between the sputter processing and microstructure of these spherical samples. At least two barriers to growth to full thickness (i.e. 170 microns) have been identified and efforts to overcome these barriers are underway.

  1. Calculation of the superconducting transition temperature of a graphene layer doped with titanium and palladium

    NASA Astrophysics Data System (ADS)

    Vazquez, Gerardo; Magana, Fernando; Salas-Torres, Osiris

    We explore the structural interactions between graphene and transition metals such as palladium (Pd) and titanium (Ti) and the possibility of inducing superconductivity in a graphene sheet in two cases, one by doping its surface with palladium atoms sit on the center of the hexagons of the graphene layer and other by covering the graphene layer with two layers of titanium metal atoms. The results here were obtained from first-principles density functional theory in the local density approximation. The Quantum-Espresso package was used with norm conserving pseudopotentials. All of the structures considered were relaxed to their minimum energy configuration. Phonon frequencies were calculated using the linear-response technique on several phonon wave-vector mesh. The electron-phonon coupling parameter was calculated with several electron momentum k-mesh. The superconducting critical temperature was estimated using the Allen-Dynes formula with μ* = 0.1 - 0.15. We note that palladium and titanium are good candidate materials to show a metal-to-superconductor transition. We thank Dirección General de Asuntos del Personal Académico de la Universidad Nacional Autónoma de México, partial financial support by Grant IN-106514 and we also thank Miztli Super-Computing center the technical assistance.

  2. Ultrafast Nonlinear Response of Bulk Plasmons in Highly Doped ZnO Layers.

    PubMed

    Tyborski, Tobias; Kalusniak, Sascha; Sadofev, Sergey; Henneberger, Fritz; Woerner, Michael; Elsaesser, Thomas

    2015-10-01

    Longitudinal bulk plasmons in an n-doped ZnO layer system are studied by two-color femtosecond pump-probe spectroscopy in the midinfrared. The optical bulk plasmon resonance identified in linear reflectivity spectra undergoes a strong redshift and a limited broadening upon intraband excitation of electrons. The nonlinear changes of plasmon absorption decay on a time scale of 2 ps and originate from the intraband redistribution of electrons. Theoretical calculations explain the plasmon redshift by the transient increase of the ensemble-averaged electron mass and the concomitantly reduced plasma frequency in the hot electron plasma. The observed bulk plasmon nonlinearity holds strong potential for applications in plasmonics. PMID:26551822

  3. The preparation of a Eu3+-doped ZnO bi-functional layer and its application in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Wu, Na; Luo, Qun; Qiao, Xvsheng; Ma, Chang-Qi

    2015-12-01

    Recently, spectra conversion has been used to minimize energy loss in photovoltaic devices. In this work, we explore the development of a novel Eu3+-doped ZnO bi-functional layer for use in organic solar cells. The bi-functional layer acts as both a spectra conversion and an electron transporting layer. Compared to conventional spectra conversion layers, it has a simpler device structure, is easier to fabricate, and has a wider spectrum-sensitized region. A series of Eu3+-doped ZnO nanocrystals were synthesized using the simple solution route. X-ray powder diffraction patterns (XRD), transmission electron microscopy (TEM), and UV-visible absorbance spectra were used to characterize the obtained ZnO nanocrystals. The results reveal that the size and bandgap of ZnO nanocrystals can be controlled through regulation of the doping concentration of Eu3+ ions. The energy transfer of ZnO → Eu3+ is observed by photoluminescence (PL) spectra. At a bandgap excitation of around 300-400 nm, a typical emission band from the Eu3+ is obtained. By employing the Eu3+- doped ZnO nanocrystals as a buffer layer in a P3HT:PC61BM bulk heterojunction device, the obtained performance is similar to the undoped ZnO device, indicating that the electrical properties of ZnO are not affected by Eu3+ doping. Due to the down-conversion energy transfer between ZnO and Eu3+, the external quantum efficiency of the ZnO:Eu3+ device at 300-400 nm is higher than that of the pure ZnO device, which subsequently leads to an increase in short circuit current density (J SC). This work proves that it is possible to improve the solar spectrum response in the ultraviolet region of organic solar cells effectively by incorporating the bi-functional layer.

  4. Multifunctional Nitrogen-Doped Loofah Sponge Carbon Blocking Layer for High-Performance Rechargeable Lithium Batteries.

    PubMed

    Gu, Xingxing; Tong, Chuan-Jia; Rehman, Sarish; Liu, Li-Min; Hou, Yanglong; Zhang, Shanqing

    2016-06-29

    Low-cost, long-life, and high-performance lithium batteries not only provide an economically viable power source to electric vehicles and smart electricity grids but also address the issues of the energy shortage and environmental sustainability. Herein, low-cost, hierarchically porous, and nitrogen-doped loofah sponge carbon (N-LSC) derived from the loofah sponge has been synthesized via a simple calcining process and then applied as a multifunctional blocking layer for Li-S, Li-Se, and Li-I2 batteries. As a result of the ultrahigh specific area (2551.06 m(2) g(-1)), high porosity (1.75 cm(3) g(-1)), high conductivity (1170 S m(-1)), and heteroatoms doping of N-LSC, the resultant Li-S, Li-Se, and Li-I2 batteries with the N-LSC-900 membrane deliver outstanding electrochemical performance stability in all cases, i.e., high reversible capacities of 623.6 mA h g(-1) at 1675 mA g(-1) after 500 cycles, 350 mA h g(-1) at 1356 mA g(-1) after 1000 cycles, and 150 mA h g(-1) at 10550 mA g(-1) after 5000 cycles, respectively. The successful application to Li-S, Li-Se, and Li-I2 batteries suggests that loofa sponge carbon could play a vital role in modern rechargeable battery industries as a universal, cost-effective, environmentally friendly, and high-performance blocking layer. PMID:27250732

  5. Multifunctional Nitrogen-Doped Loofah Sponge Carbon Blocking Layer for High-Performance Rechargeable Lithium Batteries.

    PubMed

    Gu, Xingxing; Tong, Chuan-Jia; Rehman, Sarish; Liu, Li-Min; Hou, Yanglong; Zhang, Shanqing

    2016-06-29

    Low-cost, long-life, and high-performance lithium batteries not only provide an economically viable power source to electric vehicles and smart electricity grids but also address the issues of the energy shortage and environmental sustainability. Herein, low-cost, hierarchically porous, and nitrogen-doped loofah sponge carbon (N-LSC) derived from the loofah sponge has been synthesized via a simple calcining process and then applied as a multifunctional blocking layer for Li-S, Li-Se, and Li-I2 batteries. As a result of the ultrahigh specific area (2551.06 m(2) g(-1)), high porosity (1.75 cm(3) g(-1)), high conductivity (1170 S m(-1)), and heteroatoms doping of N-LSC, the resultant Li-S, Li-Se, and Li-I2 batteries with the N-LSC-900 membrane deliver outstanding electrochemical performance stability in all cases, i.e., high reversible capacities of 623.6 mA h g(-1) at 1675 mA g(-1) after 500 cycles, 350 mA h g(-1) at 1356 mA g(-1) after 1000 cycles, and 150 mA h g(-1) at 10550 mA g(-1) after 5000 cycles, respectively. The successful application to Li-S, Li-Se, and Li-I2 batteries suggests that loofa sponge carbon could play a vital role in modern rechargeable battery industries as a universal, cost-effective, environmentally friendly, and high-performance blocking layer.

  6. Material and Doping Dependence of the Nodal and Anti-Nodal Dispersion Renormalizations in Single- and Multi-Layer Cuprates

    SciTech Connect

    Johnston, S.; Lee, W.S.; Nowadnick, E.A.; Moritz, B.; Shen, Z.-X.; Devereaux, T.P.; /Stanford U., Geballe Lab. /SLAC

    2010-02-15

    In this paper we present a review of bosonic renormalization effects on electronic carriers observed from angle-resolved photoemission spectra in the cuprates. Specifically, we discuss the viewpoint that these renormalizations represent coupling of the electrons to the lattice and review how materials dependence, such as the number of CuO{sub 2} layers, and doping dependence can be understood straightforwardly in terms of several aspects of electron-phonon coupling in layered correlated materials.

  7. Biomimetic layer-by-layer deposition assisted synthesis of Cu, N co-doped TiO2 nanosheets with enhanced visible light photocatalytic performance.

    PubMed

    Wang, Xiaobo; Yan, Yong; Hao, Bo; Chen, Ge

    2014-10-01

    In this paper, a Cu, N co-doped TiO2 nanosheet with increased visible light photocatalytic activity was successfully synthesized using a biomimetic layer-by-layer deposition process. The polymer, branched-polyethyleneimine (b-PEI) was used as an induction agent for the hydrolysis of titanium bis(ammonium lactato)-dihydroxide (Ti-BALDH) as well as for a nitrogen resource, and the graphene oxide (GO) was used as a two-dimensional nano-template. The positively charged b-PEI will bind to the negatively charged GO and titania. In a typical layer-by-layer deposition process, GO nanosheets are exposed in an alternating fashion to aqueous b-PEI, CuCl2 and Ti-BALDH solutions, thus, making the layer-by-layer deposition of a conformal b-PEI/Cu-Ti-O coating on the GO. Subsequent b-PEI and GO pyrolysis at 550 °C under air yielded Cu, N co-doped TiO2 nanosheets. The materials obtained were comprehensively investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, UV-Vis diffuse reflectance spectroscopy, Raman spectra, photoluminescence spectra and electron paramagnetic resonance. The Cu, N co-doped TiO2 nanosheets showed obviously enhanced photocatalytic activity which was evaluated by degradation of methylene blue under visible light irradiation. This research might provide some new insights for the "green synthesis" of the simultaneous doping of two kinds of foreign atoms into TiO2 with controlled morphology and photocatalytic properties.

  8. Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity detection in microchips.

    PubMed

    Lima, Renato Sousa; Segato, Thiago Pinotti; Gobbi, Angelo Luiz; Coltro, Wendell Karlos Tomazelli; Carrilho, Emanuel

    2011-12-21

    This communication describes a new procedure to increase the sensitivity of C(4)D in PDMS/glass microchips. The method consists in doping the insulating layer (PDMS) over the electrodes with nanoparticles of TiO(2), increasing thus its dielectric constant. The experimental protocol is simple, inexpensive, and fast.

  9. Pulsed laser annealing of highly doped Ge:Sb layers deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Batalov, R. I.; Bayazitov, R. M.; Faizrakhmanov, I. A.; Lyadov, N. M.; Shustov, V. A.; Ivlev, G. D.

    2016-10-01

    Germanium (Ge) is a promising material for micro- and optoelectronics to produce high speed field-effect transistors, photodetectors, light-emitting diodes and lasers. For such applications tensile-strained and/or highly n-doped Ge layers are needed. The authors have performed the formation of such layers by ion-beam sputtering of composite Sb/Ge target, deposition of thin amorphous Ge:Sb films (~200 nm thick) on different substrates (c-Si, c-Al2O3, α-SiO2) followed by pulsed laser annealing (PLA) for their crystallization and Sb dopant activation. Structural, electrical and optical characterization of Ge:Sb films was carried out using scanning electron microscopy, x-ray diffraction, micro-Raman spectroscopy, secondary ion mass spectrometry methods and by measuring sheet resistance, carrier concentration and photoluminescence. The obtained polycrystalline n-Ge:Sb layers (N Sb ~ 1 at.%) are characterized by increased values of tensile strain (up to 1%) and homogenious Sb dopant distribution within layer thickness. The electrical measurements at 300 K revealed the low sheet resistance (up to 40 Ω/□) and extremely high electron concentration (up to 5.5  ×  1020 cm-3) in Ge:Sb/SiO2 samples that indicated full electrical activation of Sb dopant on SiO2 substrate. The increased values of tensile strain and electron concentration of Ge:Sb films on α-SiO2 are explained by low values of thermal conductivity and thermal expansion coefficients of quartz substrate.

  10. Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers

    NASA Astrophysics Data System (ADS)

    Taohong, Wang; Changbo, Chen; Kunping, Guo; Guo, Chen; Tao, Xu; Bin, Wei

    2016-03-01

    The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer (CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode (OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline (Bphen), and 8-hydroxyquinolatolithium (Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies (PCEs) of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs2CO3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL. Project supported by the National Natural Science Foundation of China (Grant No. 61204014), the “Chenguang” Project (13CG42) supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation, China, and the Shanghai University Young Teacher Training Program of Shanghai Municipality, China.

  11. Lower Atmospheric Boundary Layer Experiment (LABLE) Final Campaign Report

    SciTech Connect

    Klein, P; Bonin, TA; Newman, JF; Turner, DD; Chilson, P; Blumberg, WG; Mishra, S; Wainwright, CE; Carney, M; Jacobsen, EP; Wharton, S

    2015-11-01

    The Lower Atmospheric Boundary Layer Experiment (LABLE) included two measurement campaigns conducted at the Atmospheric Radiation Measurement (ARM) Southern Great Plains site in Oklahoma during 2012 and 2013. LABLE was designed as a multi-phase, low-cost collaboration among the University of Oklahoma, the National Severe Storms Laboratory, Lawrence Livermore National Laboratory, and the ARM program. A unique aspect was the role of graduate students in LABLE. They served as principal investigators and took the lead in designing and conducting experiments using different sampling strategies to best resolve boundary-layer phenomena.

  12. Band offset of vanadium-doped molybdenum oxide hole transport layer in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Chang, Feng-Kuei; Huang, Yi-Chi; Jeng, Jiann-Shing; Chen, Jen-Sue

    2016-08-01

    Solution-processed vanadium-doped molybdenum oxide films (V)MoOx films with mole ratios of Mo:V = 1:0, 1:0.05, 1:0.2, 1:0.5, 0:1, are fabricated as hole transport layer (HTL) in organic photovoltaics with active layer blend comprising poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). The device structure is ITO/(V)MoOx/P3HT:PCBM/ZnO NP/Al, and the working area is 0.16 cm2. The result shows that the device using V0.05MoOx HTL has the best performance, including power conversion efficiency of 2.16%, Voc of 0.6 V, Jsc of 6.93 mA/cm2, and FF of 51.9%. Using ultraviolet photoelectron spectroscopy (UPS), we can define the energy levels of valence band edge and Fermi level of (V)MoOx films. UPS analysis indicates that V0.05MoOx has the smallest energy band offset between its valence band edge to the HOMO of P3HT, which is advantageous for hole transporting from P3HT to ITO anode via the V0.05MoOx HTL. In addition, V0.05MoOx film shows the lowest electrical resistivity among all (V)MoOx films, which is further beneficial for hole transportation.

  13. Improve efficiency of perovskite solar cells by using Magnesium doped ZnO and TiO2 compact layers

    NASA Astrophysics Data System (ADS)

    Baktash, Ardeshir; Amiri, Omid; Sasani, Alireza

    2016-05-01

    Here the effect of Magnesium doped TiO2 and ZnO as hole blocking layers (HBLs) are investigated by using solar cell capacitance simulator (SCAPS). The Impact of Magnesium concentration into the TiO2 and ZnO and effect of operating temperature on the performance of the perovskite solar cell are investigated. Best cell performance for both TiO2 and ZnO HBLs (with cell efficiencies of 19.86% and 19.57% respectively) are concluded for the doping level of 10% of Mg into the structure of HBLs. Increase in operating temperature from 300 K to 400 K are decreased the performance of the perovskite solar cell with both pure and Mg-doped HBLs. However, the cells with pure ZnO layer and with Zn0.9 Mg0.1O layer show the highest (with a decline of 8.88% in efficiency) and the lowest stability (with a decline of 50.49% in efficiency) at higher temperatures respectively. Moreover, the cell with Ti0.9 Mg0.1O2 layer shows better stability (with 21.85% reduction in efficiency) than the cell with pure TiO2 compact layer (with 23.28% reduction in efficiency) at higher operating temperatures.

  14. The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Salehzadeh, O.; He, C.; Benyon, W.; SpringThorpe, A. J.

    2016-07-01

    We report on the effects of Zn-doping using diethylzinc (DEZn) on the growth of In1-xGaxAsyP1-y quaternary layers (x=0.18-0.41 and y=0.34-0.76) by metalorganic chemical vapour deposition. Independent of the quaternary layer compositions, a systematic reduction (increase) in Indium (Gallium) was observed. This was accompanied by a reduction in the overall growth rate, and increased tensile strain, with increasing DEZn flow. In contrast, the dependence of arsenic/phosphorus incorporation on DEZn flow was found to depend on the surface stoichiometry. We show quantitatively that the observed tensile strain can be explained by compositional variations caused by the Zn-doping process. These results suggest that DEZn affects both homogeneous and heterogeneous processes during the growth of InGaAsP layers.

  15. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  16. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect

    Prestat, E. Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A.

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  17. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

    SciTech Connect

    Antonov, A. V.; Drozdov, M. N.; Novikov, A. V. Yurasov, D. V.

    2015-11-15

    The segregation of Sb in Ge epitaxial layers grown by the method of molecular beam epitaxy on Ge (001) substrates is investigated. For a growth temperature range of 180–325°C, the temperature dependence is determined for the segregation ratio of Sb in Ge, which shows a sharp increase (by more than three orders of magnitude) with increasing temperature. The strong dependence of the segregation properties of Sb on the growth temperature makes it possible to adapt a method based on the controlled use of segregation developed previously for the doping of Si structures for the selective doping of Ge structures with a donor impurity. Using this method selectively doped Ge:Sb structures, in which the bulk impurity concentration varies by an order of magnitude at distances of 3–5 nm, are obtained.

  18. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    NASA Technical Reports Server (NTRS)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  19. Tape method of forming a thin layer of doped lanthanum chromite particles and of bonding such on an electrode

    DOEpatents

    Richards, Von L.; Singhal, Subhash C.; Pal, Uday B.

    1992-01-01

    A combustible polymer film, useful for application of an interconnection on an electrode is made by: (1) providing doped LaCro.sub.3 particles; (2) dispersing doped LaCrO.sub.3 particles in a solvent, to provide a dispersion; (3) screening the dispersion to provide particles in the range of from 30 micrometers to 80 micrometers; (4) admixing a fugitive polymer with the particles; (5) casting the dispersion to provide a film; (6) drying the film; and (7) stripping the film. The film can then be applied to a porous, preheated electrode top surface, and then electrochemical vapor depositing a dense skeletal LaCrO.sub.3 structure, between and around the doped LaCrO.sub.3 particles. Additional solid oxide electrolyte and fuel electrode layers can then be added to provide a fuel cell.

  20. Tape method of forming a thin layer of doped lanthanum chromite particles and of bonding such on an electrode

    DOEpatents

    Richards, V.L.; Singhal, S.C.; Pal, U.B.

    1992-07-21

    A combustible polymer film, useful for application of an interconnection on an electrode is made by: (1) providing doped LaCro[sub 3] particles; (2) dispersing doped LaCrO[sub 3] particles in a solvent, to provide a dispersion; (3) screening the dispersion to provide particles in the range of from 30 micrometers to 80 micrometers; (4) admixing a fugitive polymer with the particles; (5) casting the dispersion to provide a film; (6) drying the film; and (7) stripping the film. The film can then be applied to a porous, preheated electrode top surface, and then a dense skeletal LaCrO[sub 3] structure is electrochemically vapor deposited between and around the doped LaCrO[sub 3] particles. Additional solid oxide electrolyte and fuel electrode layers can then be added to provide a fuel cell. 4 figs.

  1. Boundary layer studies related to fusion theory. Final report

    SciTech Connect

    1981-09-29

    The described work studied the boundary between closed and open field lines in EBT geometry, with emphasis on the microstability properties. These properties were established primarily for drift waves in the lower hybrid range of frequencies. The transport due to these modes was evaluated by a self-consistent treatment, using quasilinear models in a plasma diffusion code. The model was benchmarked against the EDT experimental results from ORNL and the sensitivity to transport model established. Viscosity was estimated to be negligible compared with anomalous transport. Drift wave turbulence gave a boundary layer size much more consistent with experiment than either collisional transport or Bohm diffusion.

  2. Tunable plasmons in few-layer nitrogen-doped graphene nanostructures: A time-dependent density functional theory study

    NASA Astrophysics Data System (ADS)

    Shu, Xiao-qin; Zhang, Hong; Cheng, Xin-lu; Miyamoto, Yoshiyuki

    2016-05-01

    Compared with conventional metal plasmonic materials, surface plasmons in graphene are advantageous in terms of higher confinement, relative low loss, flexible featuring, and good tunability. However, the working frequencies of the pristine graphene (undoped graphene) surface plasmons are located in the terahertz and infrared regions, which limit their applications. Here we show high-frequency plasmons in nitrogen (N)-doped graphene nanostructures investigated by time-dependent density functional theory. We found the optical absorption strength of systems containing two layers to be more than twofold stronger than that of systems with monolayers. The optical absorption strength increases as the interlayer distance increases, and the absorption spectra are red-shifted for impulse excitations polarized in the armchair edge direction (x axis). For microstructures of more than two layers, the optical absorption strength increases as number of layers of the N-doped graphene nanostructures increases. In addition, when the number of layers becomes elevated at low-energy resonances, the absorption spectra are seen to blue-shift. The plasmon energy resonance points are located in the visible and ultraviolet regions. The N-doped graphene provides an effective strategy for nanoscale plasmon devices in the visible and ultraviolet regions, despite their weaker absorption intensities when compared with the pristine graphene.

  3. Carbon transport in the bottom boundary layer. Final report

    SciTech Connect

    Lohrenz, S.E.; Asper, V.L.

    1997-09-01

    The authors objective was to characterize distributions of chloropigment fluorescence in relation to physical processes in the benthic boundary layer in support of the Department of Energy (DOE) Ocean Margins Program`s (OMP) goal of quantifying carbon transport across the continental shelf. Their approach involved participation in the Ocean Margins Program (OMP) field experiment on the continental shelf off Cape Hatteras by conducting multi-sensor fluorescence measurements of photosynthetic pigments. Specific tasks included (1) pre- and post-deployment calibration of multiple fluorescence sensors in conjunction with Woods Hole personnel; (2) collection and analysis of photosynthetic pigment concentrations and total particulate carbon in water column samples to aid in interpretation of the fluorescence time-series during the field experiment; (3) collaboration in the analysis and interpretation of 1994 and 1996 time-series data in support of efforts to quantify pigment and particulate organic carbon transport on the continental shelf off Cape Hatteras. This third component included analysis of data obtained with a multi-sensor fiber-optic fluorometer in the benthic boundary layer of the inner shelf off Cape Hatteras during summer 1994.

  4. Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu; Choi, Won Jun

    2015-11-01

    We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (Ec-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (Ec-0.35 eV) and M4 (Ec-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC.

  5. Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

    SciTech Connect

    Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu; Choi, Won Jun

    2015-11-16

    We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (E{sub c}-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (E{sub c}-0.35 eV) and M4 (E{sub c}-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC.

  6. Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Wu, Zili; Zhang, Xiong; Liang, Tianhui; Feng, Zhe Chuan; Cui, Yiping

    2016-10-01

    The Mg-delta-doped p-AlInGaN epi-layers were successfully grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth temperature on the characteristics of the Mg-delta-doped p-AlInGaN epi-layers were investigated in detail with scanning electron microscopy (SEM), high resolution X-ray diffraction (HR-XRD), photoluminescence (PL), and Hall effect measurements. The characterization results showed that the surfaces of the p-AlInGaN epi-layers were textured with a high density of hexagonal pits, which was found to be strongly dependent on the growth temperature. This feature should be very helpful to enhance the light extraction efficiency when the p-AlInGaN epi-layers were used as the top p-contact layer for making AlInGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). In addition, the low temperature PL spectra demonstrated that the Mg-H complex-related broad emission band which was observed for the as-grown p-AlInGaN epi-layer samples was not resolvable for the annealed samples. This fact implies that the Mg-H complex can be effectively dissociated by annealing process. Moreover, owing to the improved In incorporation efficiency and crystalline quality for the p-AlInGaN epi-layers, a hole concentration as high as 1.69 × 1017 cm-3 was achieved with the reformed Mg-delta-doping technique developed in this study.

  7. The Effect of Boron Doping on Structure and Electrochemical Performance of Lithium-Rich Layered Oxide Materials.

    PubMed

    Liu, Jiatu; Wang, Shuangbao; Ding, Zhengping; Zhou, Ruiqi; Xia, Qingbing; Zhang, Jinfang; Chen, Libao; Wei, Weifeng; Wang, Peng

    2016-07-20

    Polyanion doping shows great potential to improve electrochemical performance of Li-rich layered oxide (LLO) materials. Here, by optimizing the doping content and annealing temperature, we obtained boron-doped LLO materials Li1.2Mn0.54Ni0.13Co0.13BxO2 (x = 0.04 and 0.06) with comprehensively improved performance (94% capacity retention after 100 cycles at 60 mA/g current density and a rate capability much higher compared to that of the pristine sample) at annealing temperatures of 750 and 650 °C, respectively, which are much lower than the traditional annealing temperature of similar material systems without boron. The scenario of the complex crystallization process was captured using Cs-corrected high-angle annular dark field scanning transmission electron microscopic (HAADF-STEM) imaging techniques. The existence of layered, NiO-type, and spinel-like structures in a single particle induced by boron doping and optimization of annealing temperature is believed to contribute to the remarkable improvement of cycling stability and rate capability. PMID:27337243

  8. Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

    PubMed Central

    2013-01-01

    High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was confirmed by comparing the thicknesses measured by spectroscopic ellipsometry with the expected. It was also found that the locations of the (100) diffraction peaks shift towards lower diffraction angles as Ti concentration increased. For all samples, optical transmittance over 80% was obtained in the visible region. The sample with ALD cycle ratio of ZnO/TiO2 being 20 had the lowest resistivity of 8.874 × 10−4 Ω cm. In addition, carrier concentration of the prepared films underwent an evident increase and then decreased with the increase of Ti doping concentration. PMID:23442766

  9. Radionuclide separations using pillared layered materials. Final report

    SciTech Connect

    Clearfield, A.

    1995-08-31

    The objective of this project is to prepare an all inorganic strontium specific sorbent or ion exchanger for the removal of highly alkaline nuclear waste solutions. A series of clays and layered titanates were pillared and calcined to convert their essentially two dimensional structure to three dimensional porous structures with high surface areas. The pillaring agents were alumina, zirconia, chromia and silica based. The pillared clays, particularly those containing Zr pillars, achieved moderate (Kd as high at 13,700 ml/g with V:m = 28) selectivities for Sr{sup 2+}. In contrast, the silica pillared titanates showed exceptional affinities for Sr{sup 2+} with Kd values in excess of 100,000 ml/g in 5M NaNO{sup 3} + 1M NaOH. These latter results suggest a more detailed study of the pillared titanates in the presence of simulants closely resembling real waste solutions.

  10. High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

    SciTech Connect

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A.; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorption fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.

  11. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    DOE PAGES

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; et al

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which themore » materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.« less

  12. Charge and magnetic order suppression by Mn site doping in layered and three-dimensional manganites

    NASA Astrophysics Data System (ADS)

    Damay, F.; Martin, C.; Maignan, A.; Raveau, B.

    1998-03-01

    A systematic study of the doping of the Mn sites by various elements (Mg 2+, Fe 3+, Al 3+, Sn 4+, Ti 4+) in three charge ordered manganites - La 0.5Sr 1.5MnO 4, LaSr 2Mn 2O 7 and Pr 0.5Ca 0.5MnO 3 - has been performed. An abrupt disappearance of the charge ordered state is observed, for low level of dopant (˜1-2%) whatever its nature. The change of slope associated to the charge ordering on resistivity curves as well as the coupled antiferromagnetic transition on susceptibility curves indeed tend to disappear. However, whereas magnetoresistance properties are not significantly modified in the case of the layered manganites La 0.5Sr 1.5MnO 4 and LaSr 2Mn 2O 7, huge magnetoresistance is induced in the case of the three-dimensional (3D) manganite Pr 0.5Ca 0.5MnO 3. These strong modifications of the transport properties are discussed in the light of the magnetic properties.

  13. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

    SciTech Connect

    Lee, June Key E-mail: hskim7@jbnu.ac.kr; Hyeon, Gil Yong; Tawfik, Wael Z.; Choi, Hee Seok; Ryu, Sang-Wan; Jeong, Tak; Jung, Eunjin; Kim, Hyunsoo E-mail: hskim7@jbnu.ac.kr

    2015-05-14

    Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ∼35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region.

  14. High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

    DOE PAGES

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A.; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorptionmore » fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.« less

  15. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    SciTech Connect

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; Cava, R. J.

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which the materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.

  16. High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

    PubMed

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-01

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.

  17. Final report for CCS cross-layer reliability visioning study

    SciTech Connect

    Quinn, Heather M; Dehon, Andre; Carter, Nicj

    2010-12-20

    The geometric rate of improvement of transistor size and integrated circuit performance known as Moore's Law has been an engine of growth for our economy, enabling new products and services, creating new value and wealth, increasing safety, and removing menial tasks from our daily lives. Affordable, highly integrated components have enabled both life-saving technologies and rich entertainment applications. Anti-lock brakes, insulin monitors, and GPS-enabled emergency response systems save lives. Cell phones, internet appliances, virtual worlds, realistic video games, and mp3 players enrich our lives and connect us together. Over the past 40 years of silicon scaling, the increasing capabilities of inexpensive computation have transformed our society through automation and ubiquitous communications. Looking forward, increasing unpredictability threatens our ability to continue scaling integrated circuits at Moore's Law rates. As the transistors and wires that make up integrated circuits become smaller, they display both greater differences in behavior among devices designed to be identical and greater vulnerability to transient and permanent faults. Conventional design techniques expend energy to tolerate this unpredictability by adding safety margins to a circuit's operating voltage, clock frequency or charge stored per bit. However, the rising energy costs needed to compensate for increasing unpredictability are rapidly becoming unacceptable in today's environment where power consumption is often the limiting factor on integrated circuit performance and energy efficiency is a national concern. Reliability and energy consumption are both reaching key inflection points that, together, threaten to reduce or end the benefits of feature size reduction. To continue beneficial scaling, we must use a cross-layer, Jull-system-design approach to reliability. Unlike current systems, which charge every device a substantial energy tax in order to guarantee correct operation in

  18. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

    SciTech Connect

    Khazanova, S. V. Degtyarev, V. E.; Tikhov, S. V.; Baidus, N. V.

    2015-01-15

    InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.

  19. Photoluminescence of Sm doped porous silicon—evidence for light emission through luminescence centers in SiO2 layers

    NASA Astrophysics Data System (ADS)

    Lin, J.; Zhang, L. Z.; Huang, Y. M.; Zhang, B. R.; Qin, G. G.

    1994-06-01

    After oxidation promoted by gamma-ray irradiation, in the photoluminescence (PL) spectra of Sm doped porous silicon (PS), there are three sharp peaks, superimposed on a broad band, with wavelengths near to those of the Sm doped SiO2 [R. Morimo, T. Mizushima, and H. Okumura, J. Electrochem. Soc. 137, 2340 (1990)]. The experimental results indicate that Sm-related luminescence centers can be created within the oxide of porous silicon, and only in porous silicon with high porosity can the Sm-related luminescence be found in the SiO2 layer. This experimental result can be explained by the fact that the excitation of electron-hole pairs occurs in nanoscale silicon, and the recombination occurs at the Sm-related luminescence centers in SiO2 layers covering nanoscale silicon.

  20. Distinct oxygen hole doping in different layers of Sr₂CuO4-δ/La₂CuO₄ superlattices

    DOE PAGES

    Smadici, S.; Lee, J. C. T.; Rusydi, A.; Logvenov, G.; Bozovic, I.; Abbamonte, P.

    2012-03-28

    X-ray absorption in Sr₂CuO4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲xoptimal in bulk La2-xSrxCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

  1. Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

    NASA Astrophysics Data System (ADS)

    Wierer, J. J.; Allerman, A. A.; Skogen, E. J.; Tauke-Pedretti, A.; Alford, C.; Vawter, G. A.; Montaño, I.

    2014-09-01

    Layer disordering and doping compensation of an Al0.028Ga0.972N/AlN superlattice by implantation are demonstrated. The as-grown sample exhibits intersubband absorption at ˜1.56 μm which is modified when subject to a silicon implantation. After implantation, the intersubband absorption decreases and shifts to longer wavelengths. Also, with increasing implant dose, the intersubband absorption decreases. It is shown that both layer disordering of the heterointerfaces and doping compensation from the vacancies produced during the implantation cause the changes in the intersubband absorption. Such a method is useful for removing absorption in spatially defined areas of III-nitride optoelectronic devices by, for example, creating low-loss optical waveguides monolithically that can be integrated with as-grown areas operating as electro-absorption intersubband modulators.

  2. A Titanium-Doped SiOx Passivation Layer for Greatly Enhanced Performance of a Hematite-Based Photoelectrochemical System.

    PubMed

    Ahn, Hyo-Jin; Yoon, Ki-Yong; Kwak, Myung-Jun; Jang, Ji-Hyun

    2016-08-16

    This study introduces an in situ fabrication of nanoporous hematite with a Ti-doped SiOx passivation layer for a high-performance water-splitting system. The nanoporous hematite with a Ti-doped SiOx layer (Ti-(SiOx /np-Fe2 O3 )) has a photocurrent density of 2.44 mA cm(-2) at 1.23 VRHE and 3.70 mA cm(-2) at 1.50 VRHE . When a cobalt phosphate co-catalyst was applied to Ti-(SiOx /np-Fe2 O3 ), the photocurrent density reached 3.19 mA cm(-2) at 1.23 VRHE with stability, which shows great potential of the use of the Ti-doped SiOx layer with a synergistic effect of decreased charge recombination, the increased number of active sites, and the reduced hole-diffusion pathway from the hematite to the electrolyte. PMID:27358249

  3. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

    SciTech Connect

    Tsai, Jung-Hui Ye, Sheng-Shiun; Guo, Der-Feng; Lour, Wen-Shiung

    2012-04-15

    Influence corresponding to the position of {delta}-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower {delta}-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper {delta}-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower {delta}-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.

  4. Optical reflectivity and Raman scattering in few-layer-thick graphene highly doped by K and Rb.

    PubMed

    Jung, Naeyoung; Kim, Bumjung; Crowther, Andrew C; Kim, Namdong; Nuckolls, Colin; Brus, Louis

    2011-07-26

    We report the optical reflectivity and Raman scattering of few layer (L) graphene exposed to K and Rb vapors. Samples many tens of layers thick show the reflectivity and Raman spectra of the stage 1 bulk alkali intercalation compounds (GICs) KC(8) and RbC(8). However, these bulk optical and Raman properties only begin to appear in samples more than about 15 graphene layers thick. The 1 L to 4 L alkali exposed graphene Raman spectra are profoundly different than the Breit-Wigner-Fano (BWF) spectra of the bulk stage 1 compounds. Samples less than 10 layers thick show Drude-like plasma edge reflectivity dip in the visible; alkali exposed few layer graphenes are significantly more transparent than intrinsic graphene. Simulations show the in-plane free electron density is lower than in the bulk stage 1 GICs. In few layer graphenes, alkalis both intercalate between layers and adsorb on the graphene surfaces. Charge transfer electrically dopes the graphene sheets to densities near and above 10(+14) electrons/cm(2). New intrinsic Raman modes at 1128 and 1264 cm(-1) are activated by in-plane graphene zone folding caused by strongly interacting, locally crystalline alkali adlayers. The K Raman spectra are independent of thickness for L = 1-4, indicating that charge transfer from adsorbed and intercalated K layers are similar. The Raman G mode is downshifted and significantly broadened from intrinsic graphene. In contrast, the Rb spectra vary strongly with L and show increased doping by intercalated alkali as L increases. Rb adlayers appear to be disordered liquids, while intercalated layers are locally crystalline solids. A significant intramolecular G mode electronic resonance Raman enhancement is observed in K exposed graphene, as compared with intrinsic graphene. PMID:21682332

  5. Super-fast switching of liquid crystals sandwiched between highly conductive graphene oxide/dimethyl sulfate doped PEDOT:PSS composite layers

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Zhang, Yifan; Oh, Byeong-Yun; Seo, Dae-Shik; Li, Xiangdan

    2016-05-01

    Graphene oxide (GO)-doped dimethyl sulfate (DMS)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) superconductive alignment layer, aligning liquid crystals (LCs) with super switching and non-residual direct current (non-residual DC) performance, is presented in this manuscript. Doping of GO increased the pristine polar energy of a thin composite layer as well as the corresponding anchoring energy of the LCs sandwiched between these thin layers but only slightly affected the thin layers' morphology. When rubbed GO/DMS/PEDOT:PSS composite layers were used as alignment layers, a homogeneous alignment of nematic LCs was observed with competitive optoelectrical switching properties and non-residual DC performance because of the enhanced field effect and charge transport induced by the doped GO.

  6. The influence of doping and post-treatment on optical-electrical properties of novel window layers

    NASA Astrophysics Data System (ADS)

    Liu, Xingzuo; Shen, Jiesheng; Zhao, Yue

    2016-10-01

    In this paper, vacuum thermal evaporation and direct current magnetron sputtering technique are used to produce a novel window layer with the structure of i-ZnO/AZO/Ag(In):AZO. Based on the traditional i-ZnO/AZO window layer, the metal Ag (In) thin film is deposited on the surface of this double-layer thin film to form a new window layer with the structure of i-ZnO/AZO/Ag (In):AZO. Comparing with the traditional i-ZnO/AZO window layer, the deposited metal Ag (In) thin film on the surface of traditional i-ZnO/AZO window layer may lead to the reduction in resistivity and transmittance, which can be attributed to high conductivity and high reflectivity of deposited metal Ag (In) thin film. After annealing, the resistance of novel window layer with the structure of i-ZnO/AZO/In:AZO has a large reduction, but the change of resistance of novel i-ZnO/AZO/Ag:AZO window layer shows a opposite trend. This phenomenon may be related to the different number of valence electron of doping element. Furthermore, the annealing process promotes the recrystallization process to decrease the internal stress and the crystal structure defects, which leads to an obvious decrease in the transmittance and the carrier scattering rate of novel window layer.

  7. Efficiency enhancement of solution-processed inverted organic solar cells with a carbon-nanotube-doped active layer

    NASA Astrophysics Data System (ADS)

    Lin, Wen-Kai; Su, Shui-Hsiang; Yeh, Meng-Cheng; Huang, Yang-Chan; Yokoyama, Meiso

    2016-01-01

    Solution-processed titanium-doped ZnO (TZO) is synthesized by the sol-gel method to be the electron-transporting layer (ETL) in an inverted organic solar cell (IOSC). Carbon nanotubes (CNTs) are doped into an active layer of poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM). The addition of CNTs in the P3HT:PCBM composite increases the conjugation length of P3HT:PCBM:CNTs, which simultaneously enhances the capacity of the composite to absorb solar energy radiation. Vanadium oxide (V2O5) was spin-coated onto the active layer to be a hole-transporting layer (HTL). The power conversion efficiency (PCE) results indicate that the V2O5 nanobelt structure possesses better phase separation and provides a more efficient surface area for the P3HT:PCBM:CNT active layer to increase photocurrent. The optimized IOSCs exhibited an open circuit voltage (Voc), a short-circuit current density (Jsc), a fill factor (FF), and a PCE of 0.55 V, 6.50 mA/cm2, 58.34%, and 2.20%, respectively, under simulated AM1.5G illumination of 100 mW/cm2.

  8. Influence of Al-, Co-, Cu-, and In-doped ZnO buffer layers on the structural and the optical properties of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kim, Younggyu; Choe, Jongyun; Nam, Giwoong; Kim, Ikhyun; Leem, Jae-Young; Lee, Sang-heon; Kim, Soaram; Kim, Do Yeob; Kim, Sung-O.

    2015-01-01

    Zinc oxide (ZnO) thin films without a buffer layer and with Al-, Co-, Cu-, and In-doped ZnO buffer layers were prepared by using the sol-gel spin-coating method. For the first time, the effects of the ZnO buffer layers doped with different metal materials on the structural and the optical properties of the ZnO thin films are investigated. The surface morphologies of the ZnO thin films having wrinkle structures significantly depended on the type of buffer layer. The largest crystallite size and the highest c-axis orientation were observed for the ZnO thin film with a Co-doped ZnO buffer layer. However, the transmittance for the ZnO thin films with metal-doped buffer layers was slightly decreased compared to that without the buffer layer, and metal-doped ZnO buffer layers hardly affected the optical band gap of the ZnO thin films.

  9. Surface modification of nitrogen-doped carbon nanotubes by ozone via atomic layer deposition

    SciTech Connect

    Lushington, Andrew; Liu, Jian; Tang, Yongji; Li, Ruying; Sun, Xueliang

    2014-01-15

    The use of ozone as an oxidizing agent for atomic layer deposition (ALD) processes is rapidly growing due to its strong oxidizing capabilities. However, the effect of ozone on nanostructured substrates such as nitrogen-doped multiwalled carbon nanotubes (NCNTs) and pristine multiwalled carbon nanotubes (PCNTs) are not very well understood and may provide an avenue toward functionalizing the carbon nanotube surface prior to deposition. The effects of ALD ozone treatment on NCNTs and PCNTs using 10 wt. % ozone at temperatures of 150, 250, and 300 °C are studied. The effect of ozone pulse time and ALD cycle number on NCNTs and PCNTs was also investigated. Morphological changes to the substrate were observed by scanning electron microscopy and high resolution transmission electron microscopy. Brunauer-Emmett-Teller measurements were also conducted to determine surface area, pore size, and pore size distribution following ozone treatment. The graphitic nature of both NCNTs and PCNTs was determined using Raman analysis while x-ray photoelectron spectroscopy (XPS) was employed to probe the chemical nature of NCNTs. It was found that O{sub 3} attack occurs preferentially to the outermost geometric surface of NCNTs. Our research also revealed that the deleterious effects of ozone are found only on NCNTs while little or no damage occurs on PCNTs. Furthermore, XPS analysis indicated that ALD ozone treatment on NCNTs, at elevated temperatures, results in loss of nitrogen content. Our studies demonstrate that ALD ozone treatment is an effective avenue toward creating low nitrogen content, defect rich substrates for use in electrochemical applications and ALD of various metal/metal oxides.

  10. Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Shi, R. P.; Huang, X. D.; Sin, Johnny K. O.; Lai, P. T.

    2015-10-01

    The charge-trapping properties of Gd2O3 with different Nb doping levels are investigated using an Al/Al2O3/Gd2O3/SiO2/Si structure. Compared with the memory device with pure Gd2O3, the one with lightly Nb-doped Gd2O3 shows better charge-trapping characteristics, including higher programming speed (6.5 V at +12 V programming voltage for 10 ms) and better retention property (92% retained charge at 85 °C after 104 s), due to its higher trapping efficiency that resulted from higher trap density and suppressed formation of a silicate interlayer at the Gd2O3/SiO2 interface induced by the Nb doping. Moreover, the one with heavily Nb-doped Gd2O3 shows improvement in erasing behavior but worse retention and lower programming speed than the one with lightly Nb-doped Gd2O3. Further analysis reveals that the Nb-doping level determines the type of dominant trap in the Nb-doped Gd2O3, thus leading to different charge-loss mechanisms and charge-trapping characteristics.

  11. Driving voltage reduction in white organic light-emitting devices from selectively doping in ambipolar blue-emitting layer

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Hung; Lin, Chi-Feng; Lee, Jiun-Haw

    2007-11-01

    White organic light-emitting devices (OLEDs) consisting of ambipolar 9,10-bis(2'-naphthyl) anthracene (ADN) as a host of blue-emitting layer (EML) were investigated. A thin codoped layer of yellow 5,6,11,12-Tetraphenylnaphthacene (rubrene) served as a probe for detecting the position of maximum recombination rate in the 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi) doped-ADN EML. Due to the energy barrier and bipolar carrier transport, the maximum recombination rate was found to be close to but not exactly at the interface of the hole-transporting layer and the EML. With appropriate tuning in the thickness, position, and dopant concentrations of the codoped layer (rubrene:DPAVBi:ADN) in the EML, the device driving voltage decreased by 21.7%, nearly 2 V in reduction, due to the increased recombination current from the faster exciton relaxation induced by the yellow dopants. Among the advantages of introducing the codoped layer over conventional single-doped layers are the elimination of the trapping effect to avoid increasing the device driving voltage, the alleviation of the dependence of the recombination zone on the applied voltage for improving color stability, and the utilization of excitons in a more efficient way to enhance device efficiency. Without using any electrically conductive layers such as the p-i-n structure, we were able to successfully generate 112 cd/m2 at 4 V from our white OLED simply by engineering the structure of the EML.

  12. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    SciTech Connect

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-12-28

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  13. Eu(3+)-doped NaGdF4 nanocrystal down-converting layer for efficient dye-sensitized solar cells.

    PubMed

    Shen, Jie; Li, Zhiqiang; Cheng, Rui; Luo, Qi; Luo, Yudan; Chen, Yiwei; Chen, Xiaohong; Sun, Zhuo; Huang, Sumei

    2014-10-22

    We present for the first time the synthesis of Eu(3+)-doped β-phase sodium gadolinium fluoride (NaGdF4:Eu) nanocrystals (NCs) using a hydrothermal method and the application of down conversion (DC) NaGdF4:Eu NCs to efficient dye-sensitized solar cells (DSSCs). The as-prepared NaGdF4:Eu(3+) NCs were characterized by X-ray diffraction, photoluminescence spectrometry, and scanning and transmission electron microscopy. DC layers consisting of poly(methyl methacrylate) (PMMA) doped with luminescent NaGdF4:Eu(3+) were prepared and attached onto the back of a prefabricated TiO2 anode to form a more efficient DSSC, compared with a device based on a pure TiO2 electrode. The influences of both doped and undoped NaGdF4 NC layers on the photovoltaic devices were compared and evaluated by the measurement of the device's incident-photon-to-current efficiency (IPCE). An obvious increase in IPCE was observed when the DC layer was added in the device. As the down-converted photons can be reabsorbed within DSSCs to generate photocurrent, the DSSC with a 100 nm thick NaGdF4:Eu(3+) DC-PMMA layer improved photoelectric conversion efficiency by 4.5% relative to the uncoated solar cell. The experiments conclude that NaGdF4:Eu(3+) nanocrystals mainly act as luminescent DC centers and light scatterers in the ultraviolet and visible domains, respectively, for enhancing the spectral response of the device in the measured spectral regime.

  14. The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions

    NASA Astrophysics Data System (ADS)

    Sun, Qing-Qing; Li, Yong-Jun; He, Jin-Lan; Yang, Wen; Zhou, Peng; Lu, Hong-Liang; Ding, Shi-Jing; Wei Zhang, David

    2013-03-01

    The single layer MoS2 is attractive for the use in the next-generation low power nanoelectronic devices because of its intrinsic bandgap compared to graphene. In this work, we investigated the transport property of a p-n junction based on two-dimensional MoS2. The n-type and p-type doping are realized through substituting sulfur with chlorine and phosphorus. The device exhibited backward diode-like behavior with large rectifying ratios. We attribute the observed current-voltage characteristics to different heavy doping effect caused by chlorine and phosphorus. Our results may throw light on the electronic modulation of MoS2 and realizations of complemented logics devices based on MoS2.

  15. Influence of Defect Segregation on the Electrical Properties of Nb-doped SrTiO3 Grain Boundary Layer

    NASA Astrophysics Data System (ADS)

    Kim, Seong-Ho; Suh, Jun-Hyuk; Park, Jae-Gwan; Kim, Yoonho

    2000-04-01

    The influences of defect segregation on electrical properties were investigated for a single grain boundary layer in Nb-doped SrTiO3. The electrical properties were compared with those of a grain embedded with a platinum wire. On the basis of the current-voltage (I-V) characteristics, it was found that the grain boundary of Nb-doped SrTiO3 could be presented as a back-to-back double Schottky model. The segregation of defects, strontium vacancies, in grain boundary was suggested from the results of currnet-time (I-t) measurement, impedance spectroscopy, and capacitance-voltage (C-V) measurement. It was also postulated that the space charge originating from this defect segregation forms the potential barrier. The activation energy for conduction through a grain boundary changed with applied voltage from 1.60 eV to 0.97 eV.

  16. Metal-Doped Silver Oxide Films as a Mask Layer for the Super-RENS Disk

    NASA Astrophysics Data System (ADS)

    Shima, Takayuki; Buechel, Dorothea; Mihalcea, Christophe; Kim, Jooho; Atoda, Nobufumi; Tominaga, Junji

    Various kinds of metal (Co, Pd, Pt and Au) were doped into Ag2O and AgO sputtered films to study its effect on the thermal decomposition process. The oxygen composition ratio was evaluated by the X-ray fluorescence spectroscopy method after annealing up to 260,oC. The optical transmittance change was measured during heating of the film to 600,oC. Noble metal doping was found to modify the AgO decomposition process, and the oxygen content decreased gradually compared to the undoped case. Super-RENS disks with a metal-doped AgO mask were prepared, and the laser power necessary for super-resolutional readout was evaluated. It slightly shifted to the higher-power side when the noble metal was doped, and this agrees with the modification of the decomposition process.Japan Science and Technology Corporation, Domestic Research Fellow

  17. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

    NASA Astrophysics Data System (ADS)

    Jang, Cholho; Zhizhen, Ye; Jianguo, Lü

    2015-12-01

    Ga doped ZnO (GZO)/Cu grid double layer structures were prepared at room temperature (RT). We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit (ΦTC = 6.19 × 10-3 Ω-1) was obtained. In this case, the transmittance, resistivity and filling factor (FF) of the GZO/Cu grid double layer are 83.74%, 1.10 × 10-4 Ω·cm and 0.173, respectively. Project supported by the Key Project of the National Natural Science Foundation of China (No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT13037), the National Natural Science Foundation of China (No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China (No. 2010R50020).

  18. Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report

    SciTech Connect

    Tamargo, M. C.; Neumark, G. F.

    2004-04-19

    It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.

  19. Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer.

    PubMed

    Liu, Donghua; Shi, Zhiwen; Zhang, Lianchang; He, Congli; Zhang, Jing; Cheng, Meng; Yang, Rong; Tian, Xuezeng; Bai, Xuedong; Shi, Dongxia; Zhang, Guangyu

    2012-08-01

    Silicon nanowires (SiNWs) are promising building blocks for future electronic devices. In SiNW-based devices, reducing the contact resistance of SiNW-metal as much as possible is critically important. Here we report a simple fabrication approach for SiNW field effect transistors (FETs) with low contact resistances by employing a heavily doped carrier injection layer wrapped around SiNWs at the contact region. Both n- and p-type SiNW-FET devices with carrier injection layers were investigated, the contact resistances were one order smaller than those without carrier injection layers and only contribute less than 14.8% for n-type devices and 11.4% for p-type devices, respectively, to the total resistance. Such low contact resistance guarantees the device characteristics mainly from the channel region of SiNW-based devices.

  20. Half-metallic digital ferromagnetic heterostructure composed of a delta-doped layer of Mn in Si.

    PubMed

    Qian, M C; Fong, C Y; Liu, Kai; Pickett, W E; Pask, J E; Yang, L H

    2006-01-20

    We propose and investigate the properties of a digital ferromagnetic heterostructure consisting of a delta-doped layer of Mn in Si, using ab initio electronic-structure methods. We find that (i) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (ii) the heterostructure is a two-dimensional half-metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-d and nearest-neighbor Si-p states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. The band lineup is found to be favorable for retaining the half-metal character to near the Curie temperature. This kind of heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.

  1. Optical modulation of guided mode resonance in the waveguide grating structure incorporated with azo-doped-poly(methylmethacrylate) cladding layer.

    PubMed

    Lin, Jian Hung; Huang, Yu Chung; DiepLai, Ngoc; Kan, Hung-Chih; Hsu, Chia Chen

    2012-01-01

    Optical modulation of guided mode resonance (GMR) is demonstrated in a waveguide grating structure (WGS) which contains a disperse-red1 (DR1)-doped poly(methylmethacrylate) (PMMA) cladding layer. The resonance wavelength of a GMR mode can be tuned by pumping the cladding layer with a 442 nm wavelength laser beam, because of photoinduced refractive index change in the layer. The resonance wavelength shifts to shorter wavelength side, and the shift increases with pumping power, up to a maximum shift of 5 nm. A detector was used to monitor the intensity of the light that was reflected from the WGS at the wavelengths of the GMR peak positions, and the WGS was found to exhibit optical modulation with a shortest switching time of less than 0.3s.

  2. Engineering lattice matching, doping level, and optical properties of KY(WO4)2:Gd, Lu, Yb layers for a cladding-side-pumped channel waveguide laser

    NASA Astrophysics Data System (ADS)

    Aravazhi, Shanmugam; Geskus, Dimitri; van Dalfsen, Koop; Vázquez-Córdova, Sergio A.; Grivas, Christos; Griebner, Uwe; García-Blanco, Sonia M.; Pollnau, Markus

    2013-05-01

    Single-crystalline KY1- x-y-z GdxLuyYbz(WO4)2 layers are grown onto undoped KY(WO4)2 substrates by liquid-phase epitaxy. The purpose of co-doping the KY(WO4)2 layer with suitable fractions of Gd3+ and Lu3+ is to achieve lattice-matched layers that allow us to engineer a high refractive-index contrast between waveguiding layer and substrate for obtaining tight optical mode confinement and simultaneously accommodate a large range of Yb3+ doping concentrations by replacing Lu3+ ions of similar ionic radius for a variety of optical amplifier or laser applications. Crack-free layers, up to a maximum lattice mismatch of ~0.08 %, are grown with systematic variations of Y3+, Gd3+, Lu3+, and Yb3+ concentrations, their refractive indices are measured at several wavelengths, and Sellmeier dispersion curves are derived. The influence of co-doping on the spectroscopy of Yb3+ is investigated. As evidenced by the experimental results, the lattice constants, refractive indices, and transition cross-sections of Yb3+ in these co-doped layers can be approximated with good accuracy by weighted averages of data from the pure compounds. The obtained information is exploited to fabricate a twofold refractive-index-engineered sample consisting of a highly Yb3+-doped tapered channel waveguide embedded in a passive planar waveguide, and a cladding-side-pumped channel waveguide laser is demonstrated.

  3. Layer-dependent dopant stability and magnetic exchange coupling of iron-doped MoS2 nanosheets.

    PubMed

    Shu, Haibo; Luo, Pengfei; Liang, Pei; Cao, Dan; Chen, Xiaoshuang

    2015-04-15

    Using density-functional theory calculations including a Hubbard U term we explore structural stability, electronic and magnetic properties of Fe-doped MoS2 nanosheets. Unlike previous reports, the geometry and the stability of Fe dopant atoms in MoS2 nanosheets strongly depend on the chemical potential and the layer number of sheets. The substitution Fe dopant atoms at the Mo sites are energetically favorable in monolayer MoS2 and the formation of intercalated and substitutional Fe complexes are preferred in bilayer and multilayer ones under the S-rich regime that is a popular condition for the synthesis of MoS2 nanosheets. We find that the Fe dopants prefer to the ferromagnetic coupling in monolayer MoS2 and the antiferromagnetic coupling in bilayer and multilayer ones, suggesting the layer dependence of magnetic exchange coupling (MEC). The transition of MEC in Fe-doped MoS2 sheets induced by the change of layer number arises from the competition mechanism between the double-exchange and superexchange couplings. The findings provide a route to facilitate the design of MoS2-based diluted magnetic semiconductors and spintronic devices.

  4. Nitrogen-doped Fe/Fe3C@graphitic layer/carbon nanotube hybrids derived from MOFs: efficient bifunctional electrocatalysts for ORR and OER.

    PubMed

    Li, Ji-Sen; Li, Shun-Li; Tang, Yu-Jia; Han, Min; Dai, Zhi-Hui; Bao, Jian-Chun; Lan, Ya-Qian

    2015-02-14

    A novel nitrogen-doped Fe/Fe3C@graphitic layer/carbon nanotube hybrid derived from MOFs has been first fabricated by a facile approach. The hybrid exhibited outstanding bifunctional electrocatalytic activity for ORR and OER, due to the merits of graphitic layer/carbon nanotube structures with highly active N and Fe/Fe3C sites.

  5. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  6. La0 . 5 - xNa0 . 5 + xFe2As2: electron and hole doping in the spacing layer

    NASA Astrophysics Data System (ADS)

    Yan, Jiaqiang; Nandi, S.; Sales, B.; Mandrus, D.

    2015-03-01

    The electron-hole asymmetry in the phase diagram of iron-based superconductors is well illustrated in doped BaFe2As2 by comparing hole-doped Ba1-xKxFe2As2 and electron doped BaFe2-xCoxAs2, mainly due to the availability of high quality single crystals which enable systematic studies using various probes. In Ba1-xKxFe2As2, K-doping takes place at the spacing layer while FeAs layers remain intact. In contrast, Co substitution in BaFe2-xCoxAs2 disturbs the contiguity of the [FeAs4] tetrahedra and interferes with superconductivity in the FeAs layers. This effect coming from substitution at different crystallographic sites has been suggested to contribute to the electron-hole asymmetry. In this talk, I will present the magnetic and structural transitions of La0 . 5 - xNa0 . 5 + xFe2As2. Our results show that La0 . 5 - xNa0 . 5 + xFe2As2, or even compounds with other rare earth and alkali ions in the spacing layer, provides a new material platform for the study of iron-based superconductors. The material could be tuned from electron-doped to hole-doped by varying the ratio between the alkali metal and rare earth ions.

  7. Nanosized Thin SnO2 Layers Doped with Te and TeO2 as Room Temperature Humidity Sensors

    PubMed Central

    Georgieva, Biliana; Podolesheva, Irena; Spasov, Georgy; Pirov, Jordan

    2014-01-01

    In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques—SEM, EDS in SEM, TEM, SAED, AES and electrical measurements—are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio RSn/Te and the evaporation conditions. It is shown that as-deposited layers with RSn/Te ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature—very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers' surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties. PMID:24854359

  8. A SnO2-samarium doped ceria additional anode layer in a direct carbon fuel cell

    NASA Astrophysics Data System (ADS)

    Yu, Baolong; Zhao, Yicheng; Li, Yongdan

    2016-02-01

    The role of a SnO2-samarium doped ceria (SDC) additional anode layer in a direct carbon fuel cell (DCFC) with SDC-(Li0.67Na0.33)2CO3 composite electrolyte and lithiated NiO-SDC-(Li0.67Na0.33)2CO3 composite cathode is investigated and compared with a NiO-SDC extra anode layer. Catalytic grown carbon fiber mixed with (Li0.67Na0.33)2CO3 is used as a fuel. At 750 °C, the maximum power outputs of 192 and 143 mW cm-2 are obtained by the cells with SnO2-SDC and NiO-SDC layers, respectively. In the SnO2-SDC layer, the reduction of SnO2 and the oxidation of Sn happen simultaneously during the cell operation, and the Sn/SnO2 redox cycle provides an additional route for fuel conversion. The formation of an insulating dense interlayer between the anode and electrolyte layers, which usually happens in DCFCs with metal anodes, is avoided in the cell with the SnO2-SDC layer, and the stability of the cell is improved consequently.

  9. Nanosized thin SnO₂ layers doped with Te and TeO₂ as room temperature humidity sensors.

    PubMed

    Georgieva, Biliana; Podolesheva, Irena; Spasov, Georgy; Pirov, Jordan

    2014-05-21

    In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques-SEM, EDS in SEM, TEM, SAED, AES and electrical measurements-are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio R(Sn/Te) and the evaporation conditions. It is shown that as-deposited layers with R(Sn/Te) ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature-very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers' surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties.

  10. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films

    SciTech Connect

    Mann, Harkirat S.; Lang, Brian N.; Schwab, Yosyp; Scarel, Giovanna; Niemelä, Janne-Petteri; Karppinen, Maarit

    2015-01-15

    Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.

  11. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    NASA Astrophysics Data System (ADS)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  12. Sulfur and nitrogen co-doped, few-layered graphene oxide as a highly efficient electrocatalyst for the oxygen-reduction reaction.

    PubMed

    Xu, Jiaoxing; Dong, Guofa; Jin, Chuanhong; Huang, Meihua; Guan, Lunhui

    2013-03-01

    S and N co-doped, few-layered graphene oxide is synthesized by using pyrimidine and thiophene as precursors for the application of the oxygen reduction reaction (ORR). The dual-doped catalyst with pyrrolic/graphitic N-dominant structures exhibits competitive catalytic activity (10.0 mA cm(-2) kinetic-limiting current density at -0.25 V) that is superior to that for mono N-doped carbon nanomaterials. This is because of a synergetic effect of N and S co-doping. Furthermore, the dual-doped catalyst also shows an efficient four-electron-dominant ORR process, which has excellent methanol tolerance and improved durability in comparison to commercial Pt/C catalysts. PMID:23404829

  13. Effects of Copper Doping on Dielectric and A.C. Conductivity in Layered Sodium Tri-Titanate Ceramic

    NASA Astrophysics Data System (ADS)

    Shripal; Dwivedi, Shailja; Singh, Rakesh; Tandon, R. P.

    2013-09-01

    Electron paramagnetic resonance (EPR) spectra of 0.01, 0.1 and 1.0 molar percentage (mp) of CuO doped derivatives of layered Na2Ti3O7 ceramic have been reported. The results show that copper substitutes as Cu2+ at Ti4+ octahedral sites. From the dependence of loss tangent (tan δ) and the relative permittivity (ɛ‧) on temperature and frequency, it is concluded that all the derivatives are of polar nature. The relaxation peaks at lower temperatures have been attributed to the presence of different types of dipoles, whereas peaks in the higher temperature region indicate possible ferroelectric phase transition. The dependence of conductivity on temperature show that electron hopping (polaron) conduction exists in a wide span of temperature range. However, the associated interlayer ionic conduction exists in a small temperature range. Interlayer alkali ion hopping mechanism of conduction has been proposed toward higher temperatures. The conductivity versus frequency plots reveal that the polaron conduction plays a prominent role toward the lower temperature side that diminishes with the rise in temperature. The most probable relaxation times for 0.01 and 0.1 mp CuO doped derivatives are almost same but it records an increased value for 1.0 mp doped material. This again attributes to the possible change in the symmetry of copper environment.

  14. Direct electrochemistry of Shewanella loihica PV-4 on gold nanoparticles-modified boron-doped diamond electrodes fabricated by layer-by-layer technique.

    PubMed

    Wu, Wenguo; Xie, Ronggang; Bai, Linling; Tang, Zuming; Gu, Zhongze

    2012-05-01

    Microbial Fuel Cells (MFCs) are robust devices capable of taping biological energy, converting pollutants into electricity through renewable biomass. The fabrication of nanostructured electrodes with good bio- and electrochemical activity, play a profound role in promoting power generation of MFCs. Au nanoparticles (AuNPs)-modified Boron-Doped Diamond (BDD) electrodes are fabricated by layer-by-layer (LBL) self-assembly technique and used for the direct electrochemistry of Shewanella loihica PV-4 in an electrochemical cell. Experimental results show that the peak current densities generated on the Au/PAH multilayer-modified BDD electrodes increased from 1.25 to 2.93 microA/cm(-2) as the layer increased from 0 to 6. Different cell morphologies of S. loihica PV-4 were also observed on the electrodes and the highest density of cells was attached on the (Au/PAH)6/BDD electrode with well-formed three-dimensional nanostructure. The electrochemistry of S. loihica PV-4 was enhanced on the (Au/PAH)4/BDD electrode due to the appropriate amount of AuNPsand thickness of PAH layer.

  15. Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

    NASA Astrophysics Data System (ADS)

    Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

    2016-02-01

    The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

  16. Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Lu, Yunhao; Feng, Y. P.

    2016-04-01

    Graphene grown on a metal surface, Cu(111), with a boron-nitride (h-BN) buffer layer is studied. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the h-BN buffer layer which results in n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV, which is comparable to that of a typical narrow gap semiconductor, opens just 0.5 eV below the Fermi level at the Dirac point. The Fermi level can be easily shifted inside this gap to make graphene a semiconductor, which is crucial for graphene-based electronic devices. A graphene-based p-n junction can be realized with graphene eptaxially grown on a metal surface.

  17. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  18. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal.

    PubMed

    Seo, J J; Kim, B Y; Kim, B S; Jeong, J K; Ok, J M; Kim, Jun Sung; Denlinger, J D; Mo, S-K; Kim, C; Kim, Y K

    2016-01-01

    A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3. PMID:27050161

  19. Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method.

    PubMed

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan; Şimşek, Veli

    2016-07-01

    A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000-3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297-302, 2016. © 2015 Wiley Periodicals, Inc.

  20. Imaging of Compressed Pure-CH Shells and CH Shells with Titanium-Doped Layers on OMEGA

    NASA Astrophysics Data System (ADS)

    Smalyuk, V. A.; Yaakobi, B.; Goncharov, V. N.; Delettrez, J. A.; Marshall, F. J.; Meyerhofer, D. D.

    1999-11-01

    The compressed shell integrity of spherical targets has been studied using the 60-beam, 30-kJ UV, OMEGA laser system. The emission from the hot core has been imaged through the cold shell at two narrow, x-ray energy bands, absorbing and nonabsorbing by the shell, allowing nonuniformities in the core emission and the cold shell areal density to be measured. Images of the target have been obtained using a pinhole-array with K-edge filters. The x-ray energies used are around 2.8 and 4.5 keV for pure-CH shells, and around 4.5 and 6 keV for titanium-doped layers. Additional images of the shell are obtained with a framed monochromatic x-ray microscope and a time-integrated crystal-spectrometer/pinhole-array combination. We will present measurements of the compressed shell integrity at the stagnation stage of spherical implosions by varying the position of the titanium-doped layer within the shell, by varying the thickness of the CH shell, and by using two different laser pulse shapes. The experimental results will be compared with 2-D (ORCHID) hydrodynamic simulations. This work was supported by the U.S. Department of Energy Office of Inertial Confinement Fusion under Cooperative Agreement No. DE-FC03-92SF19460, the University of Rochester, and the New York State Energy Research and Development Authority.

  1. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  2. Equilibrium and kinetics studies on As(V) and Sb(V) removal by Fe2+ -doped Mg-Al layered double hydroxides.

    PubMed

    Kameda, Tomohito; Kondo, Eisuke; Yoshioka, Toshiaki

    2015-03-15

    Mg-Al layered double hydroxides (Mg-Al LDHs) doped with Fe(2+) adsorbed As(V) [Formula: see text] and Sb(V) [Formula: see text] from an aqueous solution through anion exchange with Cl(-) intercalated in the LDH interlayer. Fe(2+)-doped Mg-Al LDH exhibited superior As(V) removal compared with Mg-Al LDH. The oxidation of Fe(2+) doped in the Mg-Al LDH host layer to Fe(3+) increased the positive layer charge of the LDH, thus increasing the anion-uptake capacity owing to stronger electrostatic attractive force between the positively charged layer and the anion. However, Fe(2+)-doped Mg-Al LDH was not superior to Mg-Al LDH in terms of Sb(V) removal. This was attributed to the preferential intercalation of OH(-) over [Formula: see text] . The As(V) and Sb(V) removal by LDH followed Langmuir-type adsorption, which proceeded via a pseudo-first-order reaction. The equilibrium and kinetics studies confirm that the adsorption of As(V) and Sb(V) by Fe(2+)-doped Mg-Al LDH was the result of chemical adsorption, involving the anion exchange of [Formula: see text] and [Formula: see text] with the intercalated Cl(-).

  3. Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

    PubMed Central

    Gonnelli, R. S.; Paolucci, F.; Piatti, E.; Sharda, Kanudha; Sola, A.; Tortello, M.; Nair, Jijeesh R.; Gerbaldi, C.; Bruna, M.; Borini, S.

    2015-01-01

    The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8·1014 cm−2 has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T2 component – that can be associated with electron-electron scattering – and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly, this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy. PMID:25906088

  4. Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer

    NASA Astrophysics Data System (ADS)

    Chen, Fei; Lin, Qingli; Wang, Hongzhe; Wang, Lei; Zhang, Fengjuan; Du, Zuliang; Shen, Huaibin; Li, Lin Song

    2016-08-01

    In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT:PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in PEDOT:PSS, the optimal devices were obtained with ~22-nm-sized Au NP dopant at the concentration with an optical density (OD) of 0.21. Highly bright green QLEDs with a maximum external quantum efficiency (EQE) of 8.2 % and a current efficiency of 29.1 cd/A exhibit 80 % improvement compared with devices without Au NP dopants. The improved performance may be attributed to the significant increase in the hole injection rate as a result of the introduction of Au NPs and the good matching between the resonance frequency of the localized surface plasmon resonance (LSPR) generated by the Au NPs and the emission band of QD layer, as well as the suppressed Auger recombination of QD layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons. These results are helpful for fabricating high-performance QD-based applications, such as full-color displays and solid-state lighting.

  5. Possible Deviation from the well-known Threshold Behavior of Field-Effect Doping Phenomenon in Extremely Thin Organic Semiconductor Layer

    NASA Astrophysics Data System (ADS)

    Ikegami, Keiichi

    2004-05-01

    Field-effect doping in a metal/insulator/semiconductor/metal four-layer model indicates that the well-known threshold behavior Q\\propto(VG-Vth), where Q is the induced charge and VG and Vth are the bias voltage and its threshold value, respectively, should be realized even when the thickness of the semiconductor layer (ds) is on the 10 nm scale. At the same time, however, this model suggests that the doping phenomenon deviates from this simple threshold behavior when the density of states is small and ds is on the 1 nm scale.

  6. AlO x /LiF composite protection layer for Cr-doped (Bi,Sb)2Te3 quantum anomalous Hall films

    NASA Astrophysics Data System (ADS)

    Ou, Yunbo; Feng, Yang; Feng, Xiao; Hao, Zhenqi; Zhang, Liguo; Liu, Chang; Wang, Yayu; He, Ke; Ma, Xucun; Xue, Qikun

    2016-08-01

    We have realized robust quantum anomalous Hall samples by protecting Cr-doped (Bi,Sb)2Te3 topological insulator films with a combination of LiF and AlO x capping layers. The AlO x /LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped (Bi,Sb)2Te3 films and effectively prevent them from degradation induced by ambient conditions. The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system. Project supported by the National Natural Science Foundation of China (Grant No. 11325421).

  7. Rational Design of Efficient Electrocatalysts for Hydrogen Evolution Reaction: Single Layers of WS2 Nanoplates Anchored to Hollow Nitrogen-Doped Carbon Nanofibers.

    PubMed

    Yu, Sunmoon; Kim, Jaehoon; Yoon, Ki Ro; Jung, Ji-Won; Oh, Jihun; Kim, Il-Doo

    2015-12-30

    To exploit the benefits of nanostructuring for enhanced hydrogen evolution reaction (HER), we employed coaxial electrospinning to synthesize single-layered WS2 nanoplates anchored to hollow nitrogen-doped carbon nanofibers (WS2@HNCNFs) as efficient electrocatalysts. For comparison, bulk WS2 powder and single layers of WS2 embedded in nitrogen-doped carbon nanofibers (WS2@NCNFs) were synthesized and electrochemically tested. The distinctive design of the WS2@HNCNFs enables remarkable electrochemical performances showing a low overpotential with reduced charge transfer resistance, a small Tafel slope, and excellent durability. The experimental results highlight the importance of nanostructure engineering in electrocatalysts for enhanced HER. PMID:26654256

  8. Structural transformation and photoluminescence behavior during calcination of the layered europium-doped yttrium hydroxide intercalate with organic-sensitizer

    SciTech Connect

    Sun, Yahong; Pan, Guohua; Gu, Qingyang; Li, Xinxin; Sun, Genban; Ma, Shulan; Yang, Xiaojing

    2013-11-15

    Graphical abstract: Calcination of organic sensitizer intercalated layered europium-doped yttrium hydroxide displayed tunable luminescent performance dependent on calcined temperatures. The 200 °C-calcined sample revealed an optimal fluorescence behavior with respect to TA-LYH:Eu composite and the as-transformed oxide. - Highlights: • We report the calcinations process of organic/LYH:Eu nanocomposite materials. • We study structural transformation and fluorescence behavior of the calcined samples. • Calcined samples displayed tunable luminescent performance dependent on temperatures. • The optimal fluorescence was found in 200 °C-calcined sample. • This material can provide valuable guide for developing tunable luminescent materials. - Abstract: We report, for the first time, structural transformation and photoluminescence behavior by calcination of layered europium-doped yttrium hydroxide (LYH:Eu) intercalate with organic sensitizer terephthalate (TA). The calcined samples displayed tunable luminescent performance dependent on calcined temperatures. Calcination under low temperatures (200 and 300 °C) retained layered structure, while high temperatures (>400 °C) yielded oxide phase. The optimal fluorescence occurred in 200 °C-calcination, possibly resulting from an optimal arrangement of TA. Above 200 °C, the luminescence intensity was first weakened and then enhanced, due to gradual departure of TA and following occurrence of oxide phase. The energy transfer presented an intrinsic transition from TA-to-Eu{sup 3+} in the organic intercalate to O{sup 2−}-to-Eu{sup 3+} charge transfer in as-transformed oxide. The predominant luminescence property of the hybrid material can provide valuable guide for developing tunable luminescent materials, especially flexible materials resulting from the containing organic component.

  9. Phosphorus-Doped Graphene Oxide Layer as a Highly Efficient Flame Retardant.

    PubMed

    Some, Surajit; Shackery, Iman; Kim, Sun Jun; Jun, Seong Chan

    2015-10-26

    A simple and easy process has been developed to efficiently dope phosphorus into a graphene oxide surface. Phosphorus-doped graphene oxide (PGO) is prepared by the treatment of polyphosphoric acid with phosphoric acid followed by addition of a graphene oxide solution while maintaining a pH of around 5 by addition of NaOH solution. The resulting materials are characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Raman spectroscopy, thermogravimetric analysis (TGA), and scanning electron microscopy (SEM). The as-made PGO solution-coated cloth exhibits excellent flame retardation properties. The PGO-coated cloth emits some smoke at the beginning without catching fire for more than 120 s and maintains its initial shape with little shrinkage. In contrast, the pristine cloth catches fire within 5 s and is completely burned within 25 s, leaving trace amounts of black residue. The simple technique of direct introduction of phosphorus into the graphene oxide surface to produce phosphorus-doped oxidized carbon nanoplatelets may be a general approach towards the low-cost mass production of PGO for many practical applications, including flame retardation.

  10. Adsorption of ammonium on a pyridine-like nitrogen-doped graphene layer decorated with a monovalent atom

    NASA Astrophysics Data System (ADS)

    Magana, Luis Fernando; Ramirez, Juan M.; Vazquez, Gerardo Jorge

    2013-03-01

    Density functional theory and molecular dynamics were used to study the interaction of an NH4 molecule with a pyridine-like nitrogen-doped (PNG) surface. The surface is decorated with an impurity taken from the first row of the periodic table. In this way, we considered six different atoms: H, Li, Na, K, Rb and Cs, to decorate the system. We found two final configurations. One, is with the NH4 molecule physisorbed around the impurity. In the second situation, one hydrogen atom of the ammonium molecule, is adsorbed around a nitrogen atom of the surface. The remaining NH3 molecule stays physisorbed on the system. The final configuration depends on the initial position of the NH4 molecule. In all decoration cases, the system was allowed to follow an evolutionary process using molecular dynamics at 300 K, and atmospheric pressure.

  11. Room temperature performance of 4 V aqueous hybrid supercapacitor using multi-layered lithium-doped carbon negative electrode

    NASA Astrophysics Data System (ADS)

    Makino, Sho; Yamamoto, Rie; Sugimoto, Shigeyuki; Sugimoto, Wataru

    2016-09-01

    Water-stable multi-layered lithium-doped carbon (LixC6) negative electrode using poly(ethylene oxide) (PEO)-lithium bis(trifluoromethansulfonyl)imide (LiTFSI) polymer electrolyte containing N-methyl-N-propylpiperidinium bis(trifluoromethansulfonyl)imide (PP13TFSI) ionic liquid was developed. Electrochemical properties at 60 °C of the aqueous hybrid supercapacitor using activated carbon positive electrode and a multi-layered LixC6 negative electrode (LixC6 | PEO-LiTFSI | LTAP) without PP13TFSI exhibited performance similar to that using Li anode (Li | PEO-LiTFSI | LTAP). A drastic decrease in ESR was achieved by the addition of PP13TFSI to PEO-LiTFSI, allowing room temperature operation. The ESR of the multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI at 25 °C was 801 Ω cm2, which is 1/6 the value of the multi-layered Li negative electrode with PEO-LiTFSI (5014 Ω cm2). Charge/discharge test of the aqueous hybrid supercapacitor using multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI at 25 °C afforded specific capacity of 20.6 mAh (g-activated carbon)-1 with a working voltage of 2.7-3.7 V, and good long-term capability up to 3000 cycles. Furthermore, an aqueous hybrid supercapacitor consisting of a high capacitance RuO2 nanosheet positive electrode and multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI showed specific capacity of 196 mAh (g-RuO2)-1 and specific energy of 625 Wh (kg-RuO2)-1 in 2.0 M acetic acid-lithium acetate buffered solution at 25 °C.

  12. Effects of pentacene-doped PEDOT:PSS as a hole-conducting layer on the performance characteristics of polymer photovoltaic cells.

    PubMed

    Kim, Hyunsoo; Lee, Jungrae; Ok, Sunseong; Choe, Youngson

    2012-01-05

    We have investigated the effect of pentacene-doped poly(3,4-ethylenedioxythiophene:poly(4-styrenesulfonate) [PEDOT:PSS] films as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the amount of pentacene and the annealing temperature of pentacene-doped PEDOT:PSS layer, the changes of performance characteristics were evaluated. Pentacene-doped PEDOT:PSS thin films were prepared by dissolving pentacene in 1-methyl-2-pyrrolidinone solvent and mixing with PEDOT:PSS. As the amount of pentacene in the PEDOT:PSS solution was increased, UV-visible transmittance also increased dramatically. By increasing the amount of pentacene in PEDOT:PSS films, dramatic decreases in both the work function and surface resistance were observed. However, the work function and surface resistance began to sharply increase above the doping amount of pentacene at 7.7 and 9.9 mg, respectively. As the annealing temperature was increased, the surface roughness of pentacene-doped PEDOT:PSS films also increased, leading to the formation of PEDOT:PSS aggregates. The films of pentacene-doped PEDOT:PSS were characterized by AFM, SEM, UV-visible transmittance, surface analyzer, surface resistance, and photovoltaic response analysis.

  13. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    NASA Astrophysics Data System (ADS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al3+ films. The electrochromic performance of the films were evaluated by means of UV-vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film.

  14. Direct Synthesis of Few-Layer F-Doped Graphene Foam and Its Lithium/Potassium Storage Properties.

    PubMed

    Ju, Zhicheng; Zhang, Shuai; Xing, Zheng; Zhuang, Quanchao; Qiang, Yinghuai; Qian, Yitai

    2016-08-17

    Heteroatom-doped graphene is considered a potential electrode materials for lithium-ion batteries (LIBs). However, potassium-ion batteries (PIBs) systems are possible alternatives due to the comparatively higher abundance. Here, a practical solid-state method is described for the preparation of few-layer F-doped graphene foam (FFGF) with thickness of about 4 nm and high surface area (874 m(2)g(-1)). As anode material for LIBs, FFGF exhibits 800 mAh·g(-1) after 50 cycles at a current density of 100 mA·g(-1) and 555 mAh·g(-1) after 100 cycles at 200 mA·g(-1) as well as remarkable rate capability. FFGF also shows 165.9 mAh·g(-1) at 500 mA·g(-1) for 200 cycles for PIBs. Research suggests that the multiple synergistic effects of the F-modification, high surface area, and mesoporous membrane structures endow the ions and electrons throughout the electrode matrix with fast transportation as well as offering sufficient active sites for lithium and potassium storage, resulting in excellent electrochemical performance. Furthermore, the insights obtained will be of benefit to the design of reasonable electrode materials for alkali metal ion batteries. PMID:27467782

  15. Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

    NASA Astrophysics Data System (ADS)

    Netzel, Carsten; Jeschke, Jörg; Brunner, Frank; Knauer, Arne; Weyers, Markus

    2016-09-01

    We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semiconductor surface states and the surface recombination by the incident light. The temporal behavior of the photoluminescence intensity varies with the parameters such as ambient atmosphere, pretreatment of the surface, doping density, threading dislocation density, excitation power density, and sample temperature. By means of temperature-dependent photoluminescence measurements, we observed that at least two different processes at the semiconductor surface affect the non-radiative surface recombination during illumination. The first process leads to an irreversible decrease in photoluminescence intensity and is dominant around room temperature, and the second process leads to a delayed increase in intensity and becomes dominant around T = 150-200 K. Both processes become slower when the sample temperature decreases from room temperature. They cease for T < 150 K. Stable photoluminescence intensity at arbitrary sample temperature was obtained by passivating the analyzed layer with an epitaxially grown AlN cap layer.

  16. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  17. Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer

    PubMed Central

    Kim, Jeongmo; Mat Teridi, Mohd Asri; Mohd Yusoff, Abd. Rashid bin; Jang, Jin

    2016-01-01

    Perovskite solar cells are becoming one of the leading technologies to reduce our dependency on traditional power sources. However, the frequently used component poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has several shortcomings, such as an easily corroded indium-tin-oxide (ITO) interface at elevated temperatures and induced electrical inhomogeneity. Herein, we propose solution-processed nitrogen-doped graphene oxide nanoribbons (NGONRs) as a hole transport layer (HTL) in perovskite solar cells, replacing the conducting polymer PEDOT:PSS. The conversion efficiency of NGONR-based perovskite solar cells has outperformed a control device constructed using PEDOT:PSS. Moreover, our proposed NGONR-based devices also demonstrate a negligible current hysteresis along with improved stability. This work provides an effective route for substituting PEDOT:PSS as the effective HTL. PMID:27277388

  18. Photovoltaic response in pristine WSe{sub 2} layers modulated by metal-induced surface-charge-transfer doping

    SciTech Connect

    Wi, Sungjin; Chen, Mikai; Li, Da; Nam, Hongsuk; Meyhofer, Edgar; Liang, Xiaogan

    2015-08-10

    We obtained photovoltaic response in pristine multilayer WSe{sub 2} by sandwiching WSe{sub 2} between top and bottom metals. In this structure, the work-function difference between the top metal and WSe{sub 2} plays a critical role in generating built-in potentials and photovoltaic responses. Our devices with Zn as top metal exhibit photo-conversion efficiencies up to 6.7% under 532 nm illumination and external quantum efficiencies in the range of 40%–83% for visible light. This work provides a method for generating photovoltaic responses in layered semiconductors without detrimental doping or exquisite heterostructures, and also advances the physics for modulating the band structures of such emerging semiconductors.

  19. The multicomponent doping of surface layers of materials under the influence of ion beams with a broad energy spectrum

    NASA Astrophysics Data System (ADS)

    Kalin, B. A.; Volkov, N. V.; Valikov, R. A.; Yashin, A. S.; Yakutkina, T. V.

    2016-04-01

    The paper discusses the various factors that influence the efficiency of ion mixing. It was found that in the base of penetration of atoms multilayer films in polycrystalline substrate is the process of energy transfer from ions and primary knocked-on atom (PKA) of films to subsequent displacement cascade. At the same time the penetration of implanted atoms to great depths determined by the density of defects, radiation-stimulated migration of interstitial atoms and their physico-chemical interaction with the atoms of the matrix, which can be described by the model of an isotropic mixing. It is shown that doping atoms of the multilayer films, possibly the formation of gradient layers, which are determined by radiation traces in the substrate implanted atoms and their migration under irradiation by the ion beam with a broad energy spectrum.

  20. Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer

    NASA Astrophysics Data System (ADS)

    Kim, Jeongmo; Mat Teridi, Mohd Asri; Mohd Yusoff, Abd. Rashid Bin; Jang, Jin

    2016-06-01

    Perovskite solar cells are becoming one of the leading technologies to reduce our dependency on traditional power sources. However, the frequently used component poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has several shortcomings, such as an easily corroded indium-tin-oxide (ITO) interface at elevated temperatures and induced electrical inhomogeneity. Herein, we propose solution-processed nitrogen-doped graphene oxide nanoribbons (NGONRs) as a hole transport layer (HTL) in perovskite solar cells, replacing the conducting polymer PEDOT:PSS. The conversion efficiency of NGONR-based perovskite solar cells has outperformed a control device constructed using PEDOT:PSS. Moreover, our proposed NGONR-based devices also demonstrate a negligible current hysteresis along with improved stability. This work provides an effective route for substituting PEDOT:PSS as the effective HTL.

  1. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-11-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  2. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-08-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  3. New development of large-area direct conversion detector for digital radiography using amorphous selenium with a C60-doped polymer layer

    NASA Astrophysics Data System (ADS)

    Nariyuki, F.; Imai, S.; Watano, H.; Nabeta, T.; Hosoi, Y.

    2010-04-01

    We have developed a novel direct conversion detector for digital radiography by using a fullerene (C60)-doped polymer layer added on a thick amorphous selenium (a-Se) layer coupled to an amorphous silicon thin-film transistor (a-Si TFT) array. This detector exhibits considerable improvement in the lag characteristics and durability in high ambient temperatures. The C60-doped polymer layer, which is directly and uniformly solution cast on the a-Se layer and followed by an inorganic electron-transporting layer, smoothly changes the electronic junction between the a-Se layer and the inorganic layer. It lubricates the emission of photocurrents from the a-Se photo-conversion layer and leads to the improved lag characteristics. Another merit of using a C60-doped polymer is that it is stabile in high-temperature ambient conditions and is not degraded by humidity or a large amount of X-ray exposure. The polymer layer prevents the crystallization of a-Se, which otherwise occurs on exposure of a-Se to high temperature not only during the deposition of the inorganic layer or the metal electrode layer in the manufacturing process but also in actual use. A prototype detector, with a size of 17 in × 17 in and a pixel pitch of 150 μm, exhibited a good resolution; its DQE is approximately 48% at 1 cy/mm in 258 μC/kg (RQA5). This new development can simplify cooling apparatus and detector modules and also make a wide range of operational environments available. In addition, the improved lag characteristics make it possible to reduce the exposure intervals for static imaging, tomosynthesis, and other various exposure techniques.

  4. A nitrogen doped TiO2 layer on Ti metal for the enhanced formation of apatite.

    PubMed

    Hashimoto, Masami; Kashiwagi, Kazumi; Kitaoka, Satoshi

    2011-09-01

    Biomedical titanium metals subjected to gas under precisely regulated oxygen partial pressures (P(O2)) from 10(-18) to 10(5) Pa at 973 K for 1 h were soaked in a simulated body fluid (SBF), whose ion concentrations were nearly equal to those of human blood plasma, at 36.5°C for up to 7 days. The effect of oxygen partial pressures on apatite formation was assessed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) measurements. After heating, the weight of the oxide layer (mainly TiO(2)) formed on the titanium metal was found to increase with increased oxygen partial pressure. Nitrogen (N)-doped TiO(2) (Interstitial N) was formed under a P(O2) of 10(-14) Pa. At lower P(O2) (10(-18) Pa), only a titanium nitride layer (TiN and Ti(2)N) was formed. After soaking in SBF, apatite was detected on heat-treated titanium metal samples. The most apatite was formed, based on the growth rate calculated from the apatite coverage ratio, on the titanium metal heated under a P(O2) of 10(-14) Pa, followed by the sample heated under a P(O2) of 10 and 10(4) Pa (in N(2)). The titanium metal heated under a P(O2) of 10(5) Pa (in O(2)) experienced far less apatite formation than the former three titanium samples. Similarly, very little weight change was observed for the titanium metal heated under a P(O2) of 10(-18) Pa (in N(2)). During the experimental observation period (5 days, 36.5°C, SBF), the following relationship held: The growth rate of apatite decreased in the order P(O2) of 10(-14) Pa > P(O2) of 10 Pa ≥ P(O2) of 10(4) Pa > P(O2) of 10(5) Pa > > P(O2) of 10(-18) Pa. These results suggest that N-doped TiO(2) (Interstitial N) strongly induces apatite formation but samples coated only with titanium nitride do not. Thus, controlling the formation of N-doped TiO(2) is expected to improve the bioactivity of biomedical titanium metal.

  5. Doped TiO2 anodic layers of enhanced antibacterial properties.

    PubMed

    Arenas, María A; Pérez-Jorge, Concepción; Conde, Ana; Matykina, Endzhe; Hernández-López, Juan M; Pérez-Tanoira, Ramón; de Damborenea, Juan J; Gómez-Barrena, Enrique; Esteba, Jaime

    2013-05-01

    Ti-6Al-4V joint replacement implants foster uncemented fixation in orthopaedic surgery. However, bacterial colonization competes with host cells and ultimately may produce implant-related difficult-to-treat infections, justifying the efforts to obtain infection-resistant materials. In a previous work, the authors demonstrated the antibacterial properties of anodic fluoride-TiO2 nanostructured layers on Ti-6Al-4V alloy. In this work, the anodizing bath has been modified in order to grow fluoride-TiO2 barrier layers (FBL). A bacterial adherence protocol, run with reference and six different clinical strains of Staphylococcus aureus and Staphylococcus epidermidis, showed a statistically significant decrease in the percentage of covered surface (p<0.0001, Kruskal-Wallis test) for FBL specimens when compared with non fluoride-containing specimens, i.e. chemically polished Ti-6Al-4V and F-free TiO2 barrier layers. The results obtained on the F-barrier layers allowed discrimination between the effects of the presence of fluoride in the layer and the layer nanostructure on bacterial adhesion. PMID:23357736

  6. GaAs nanowires grown on Al-doped ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Haggren, Tuomas; Perros, Alexander; Dhaka, Veer; Huhtio, Teppo; Jussila, Henri; Jiang, Hua; Ruoho, Mikko; Kakko, Joona-Pekko; Kauppinen, Esko; Lipsanen, Harri

    2013-08-01

    We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 °C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand ˜400 °C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer.

  7. Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375

    SciTech Connect

    Repins, I.

    2012-01-01

    This work has investigated the use of Na doped Mo (MONA) sputtering targets for use in preparing CIGS devices. The Mo:Na material is doped to about 3% Na by weight, implying that a 40 nm layer on top of the standard Mo contact contains sufficient Na to dope a 2.5 ..mu..m CIGS film. The ability to control Na doping independent of both CIGS processing conditions and adhesion is an important gain for industry and research. Manufacturers gain a route to increased manufacturability and performance, while NREL researchers gain a tightened performance distribution of devices and increased process flexibility. Our immediate partner in this work, the Climax Molybdenum Technology Center, gains validation of their product.

  8. Enhanced photoelectrochemical water splitting performance of TiO2 nanotube arrays coated with an ultrathin nitrogen-doped carbon film by molecular layer deposition.

    PubMed

    Tong, Xili; Yang, Peng; Wang, Yunwei; Qin, Yong; Guo, Xiangyun

    2014-06-21

    Vertically oriented TiO2 nanotube arrays (TNTAs) were conformally coated with an ultrathin nitrogen-doped (N-doped) carbon film via the carbonization of a polyimide film deposited by molecular layer deposition and simultaneously hydrogenated, thereby creating a core/shell nanostructure with a precisely controllable shell thickness. The core/shell nanostructure provides a larger heterojunction interface to substantially reduce the recombination of photogenerated electron-hole pairs, and hydrogenation enhances solar absorption of TNTAs. In addition, the N-doped carbon film coating acts as a high catalytic active surface for oxygen evolution reaction, as well as a protective film to prevent hydrogen-treated TiO2 nanotube oxidation by electrolyte or air. As a result, the N-doped carbon film coated TNTAs displayed remarkably improved photocurrent and photostability. The TNTAs with a N-doped carbon film of ∼ 1 nm produces a current density of 3.6 mA cm(-2) at 0 V vs. Ag/AgCl under the illumination of AM 1.5 G (100 mW cm(-2)), which represents one of the highest values achieved with modified TNTAs. Therefore, we propose that ultrathin N-doped carbon film coating on materials is a viable approach to enhance their PEC water splitting performance.

  9. High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer

    SciTech Connect

    Hai, Pham Nam; Yatsui, Takashi; Ohtsu, Motoichi; Tanaka, Masaaki

    2014-09-21

    We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p⁺-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ~700 K for a low input electrical power density of 0.4 W/cm², while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.

  10. Design of a novel triple reduced surface field LDMOS with partial linear variable doping n-type top layer

    NASA Astrophysics Data System (ADS)

    Qiao, Ming; Li, Chengzhou; Liu, Yihe; Wang, Yuru; Li, Zhaoji; Zhang, Bo

    2016-05-01

    A novel triple reduced surface field (RESURF) lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS) with partial linear variable doping (LVD) N-type top (N-top) layer is proposed in this paper. Compared with the conventional triple RESURF LDMOS, a partial LVD N-top layer is introduced in the surface of N-well, providing a low on-resistance conduction path and leading to an optimized surface electric field, which alleviates the inherent tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp). With the n-drift region length of 70 μm, the novel triple RESURF LDMOS obtains a high BV of 847 V and a low Ron,sp of 79 mΩ cm2 which are 76 V higher and 46 mΩ cm2 lower than those of the conventional triple RESURF LDMOS. Therefore, the novel triple RESURF LDMOS can greatly improve the tradeoff between BV and Ron,sp. Furthermore, compared with the other existing technologies in the high BV level, the novel triple RESURF LDMOS can achieve a highest figure of merit (FOM, defined as BV2/Ron,sp) of 9.08 MW/cm2 and the conventional RESURF silicon limits are broken.

  11. A novel way to enhance hydrogenation resistance of nano-layered titanium silicon carbide by the doping of aluminium

    NASA Astrophysics Data System (ADS)

    Chen, Chen; Xu, Canhui; Li, Fangzhi; Tan, Yongqiang; Zhang, Haibin; Peng, Shuming

    2016-08-01

    The outstanding irradiation and corrosion resistance of nano-layered Ti3SiC2 make it suitable for cladding materials in advanced nuclear systems. However, Ti3SiC2 shows the relatively poor thermal stability in hydrogen circumstance at high temperature, which is a big obstacle for its nuclear related applications. In this paper, we proposed an effective approach to improve the hydrogenation resistance of Ti3SiC2 by the doping of Al. The experimental results demonstrated that compared to pure Ti3SiC2, Ti3Si0.9Al0.1C2 (TSAC) displayed much better hydrogenation resistance. Through first-principles calculation, it was concluded that the introduction of H interstitial atom made the formation energy of Al vacancy much lower, so Al atoms became much easier to remove from TSAC than Si atoms and Ti atoms. The preferable loss of aluminium from TSAC substrate gave rise to the formation of Al2O3 layer, which improved the hydrogenation resistance of TSAC by inhibiting further reaction between TSAC and hydrogen.

  12. Final Closeout report for grant FG36-08GO18018, titled: Functional Multi-Layer Solution Processable Polymer Solar Cells

    SciTech Connect

    Adam J. Moule

    2012-05-01

    heterojunction layer is based upon the idea of balancing good and bad properties within a single film. This proposal addresses the idea that the use of multiple layers that have differing electrical and optical functions could lead to greater efficiency because fewer materials compromises must be made. This idea is not new, multiple functional layer have been successfully used in cross-linked OLED's and organic small molecule evaporated PV devices. The main reason that multiple layers of polymers are not commonly deposited is that most conjugated polymers are mutually soluble in the same solvents. The work outlined in the proposal was intended to develop a new deposition strategy that would allow multiple organic layers to be deposited from solution using spin coating. The deposition method that we proposed was successful, sometimes, but ultimately not reliable. Instead we focused on more reliable methods to implement doping along the interface between layers. This work has been very successful. We found that using PEDOT:PSS, the PSS would form a surface layer of {approx}2-3 nm thickness that would mix with and electrochemically react with P3HT upon heating. This mechanism is also a crosslinking reaction in that H{sub 2} is released and permanent new bonds are formed. Using the Plextronics Inc. replacement to PEDOT:PSS, for which there are no mobile dopants, we were able to show that a second and different mechanism can be used to p-type dope organic materials. We are currently working with Plextronics to develop a new product. Finally we produced n-type doping of a thin fullerene layer near the cathode also using a self-assembly method. Low work function metals will diffuse into the BHJ layer and dope the fullerene upon heating. This doping also affects the vertical segregation of BHJ materials in a predictable way. We accomplished all of the scientific goals that we set out in the proposal written in May 2007. Some of the methods we proposed were not fully successful, but we

  13. Influence of n-doped μc-Si:H back surface field layer with micro growth in crystalline-amorphous silicon heterojunction solar cells.

    PubMed

    Kim, Sangho; Dao, Vinh Ai; Shin, Chonghoon; Balaji, Nagarajan; Yi, Junsin

    2014-12-01

    The back surface field (BSF) plays an important role for the efficiency of the heterojunction intrinsic thin-film (HIT) solar cell. In this paper, the effect of thickness variation in n-type micro crystalline BSF layer was investigated by Raman and spectroscopy ellipsometry. As we increase the crystalline volume fraction (X(c)) from 6% to 59%, the open circuit voltage (V(oc)) increases from 573 to 696 mV with increase in fill factor from 59% to 71%. However, we observed that V(oc) and FF are decreased over 59% X(c) of n-type μc-Si:H BSF layer. It seems that higher X(c) micro layer include lots of defects. The quantum efficiency (QE) measurements were demonstrated on optimized thickness of n-doped micro BSF layer. In the long wavelengths region, the QE slightly increases with increasing the n-type μc-Si:H BSF layer thickness from 10 to 40 nm because of BSF effect, whereas the QE decreases when n-type μc-Si:H BSF layer thickness increases from 40 to 120 nm due to defects in the layer. The performance of heterojunction solar cell device was improved with the optimized thickness on n-doped micro BSF layer the best photo voltage parameters of the device were found to be V(oc) of 696 mV, short-circuit current density of 36.09 mA/cm2 and efficiency of 18.06% at n-doped micro BSF layer thickness of 40 nm.

  14. The transport properties of the Phosphorus and Chlorine doped single layer MoS2 p-n junctions: A first-principles study

    NASA Astrophysics Data System (ADS)

    Zeng, Qingyi; Pan, Jiangling; Yang, Zhixiong; Peng, Shenglin; Zou, Hui; Ouyang, Fangping

    2016-11-01

    We investigate the electronic transport properties of the Phosphorus (P) and Chlorine (Cl) doped single-layer MoS2 p-n junctions with different doping concentration and position by first-principles calculations. The n- and p-type doping of single-layer MoS2 p-n junctions are achieved by substituting doping of sulfur (S) atoms with P atoms and Cl atoms, respectively. The calculation results show that the current increases obviously when the bias is greater than 1.7 V for all models and these p-n junctions exhibit diode-like behavior under positive bias. When the bias ranges from 0.2 V to 1.3 V, the p-n junctions have excellent rectification performance. Only one p-n junction will display negative differential resistance (NDR) effect under the negative bias ranging of -0.5 V to -1.2 V and -1.5 V to -1.7 V. It is expected that our findings may promote the experiment on MoS2 layered material for further exploration of optoelectronic devices.

  15. Features of the charge-transport mechanism in layered Bi{sub 2}Te{sub 3} single crystals doped with chlorine and terbium

    SciTech Connect

    Abdullaev, N. A. Abdullaev, N. M.; Aliguliyeva, H. V.; Kerimova, T. G.; Mehdiyev, G. S.; Nemov, S. A.

    2011-01-15

    The temperature dependences (T = 5-300 K) of the resistivity in the plane of layers and in the direction perpendicular to the layers, as well as the Hall effect and the magnetoresistance (H < 80 kOe, T = 0.5-4.2 K) in Bi{sub 2}Te{sub 3} single crystals doped with chlorine and terbium, are investigated. It is shown that the doping of Bi{sub 2}Te{sub 3} with terbium atoms results in p-type conductivity and in increasing hole concentration. The doping of Bi{sub 2}Te{sub 3} with chlorine atoms modifies also the character of its conductivity instead of changing only the type from p to n. In the temperature dependence of the resistivity in the direction perpendicular to layers, a portion arises with the activation conductivity caused by the hopping between localized states. The charge-transport mechanism in Bi{sub 2}Te{sub 3} single crystals doped with chlorine is proposed.

  16. Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures

    SciTech Connect

    Dorozhkin, S. I. Sychev, D. V.; Kapustin, A. A.

    2014-11-28

    We have implemented a new bolometric method to detect resonances in magneto-absorption of microwave radiation by two-dimensional electron systems (2DES) in selectively doped GaAs/AlGaAs heterostructures. Radiation is absorbed by the 2DES and the thermally activated conductivity of the doping layer supplying electrons to the 2DES serves as a thermometer. The resonant absorption brought about by excitation of the confined magnetoplasma modes appears as peaks in the magnetic field dependence of the low-frequency impedance measured between the Schottky gate and 2DES.

  17. High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

    PubMed

    Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

    2015-01-27

    An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. PMID:25449020

  18. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  19. Molecular Design of Doped Polymers for Thermoelectric Systems-Final Technical Report

    SciTech Connect

    Chabinyc, Michael L.; Hawker, Craig J.

    2013-10-09

    The self-assembly of organic semiconducting molecules and polymers is critical for their electrical properties. This project addressed the design of organic semiconductors with novel synthetic building blocks for proton-dopable conducting materials and the molecular order and microstructure of high performance semiconducting polymers blended with charge transfer dopants. Novel azulene donor-acceptor materials were designed and synthesized with unique electronic effects upon protonation to generate charged species in solution. The microstructure and optical properties of these derivatives were examined to develop structure-property relationships. Studies of the microstructure of blends of charge transfer doped semiconducting polymers revealed highly ordered conductive phases in blends. The molecular packing of one blend was studied in detail using a combination of solid-state NMR and x-ray scattering revealing that dopant incorporation is unlikely to be random as assumed in transport models. Studies of the electrical properties of these highly ordered blends revealed a universal trend between the thermopower and electrical conductivity of semiconducting polymers that is independent of the doping mechanism.

  20. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    NASA Astrophysics Data System (ADS)

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

  1. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer.

    PubMed

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-12

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

  2. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    PubMed Central

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials. PMID:26753877

  3. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric.

  4. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric. PMID:24689702

  5. Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition.

    PubMed

    Macco, Bart; Knoops, Harm C M; Kessels, Wilhelmus M M

    2015-08-01

    Hydrogen-doped indium oxide (In2O3:H) has recently emerged as an enabling transparent conductive oxide for solar cells, in particular for silicon heterojunction solar cells because its high electron mobility (>100 cm(2)/(V s)) allows for a simultaneously high electrical conductivity and optical transparency. Here, we report on high-quality In2O3:H prepared by a low-temperature atomic layer deposition (ALD) process and present insights into the doping mechanism and the electron scattering processes that limit the carrier mobility in such films. The process consists of ALD of amorphous In2O3:H at 100 °C and subsequent solid-phase crystallization at 150-200 °C to obtain large-grained polycrystalline In2O3:H films. The changes in optoelectronic properties upon crystallization have been monitored both electrically by Hall measurements and optically by analysis of the Drude response. After crystallization, an excellent carrier mobility of 128 ± 4 cm(2)/(V s) can be obtained at a carrier density of 1.8 × 10(20) cm(-3), irrespective of the annealing temperature. Temperature-dependent Hall measurements have revealed that electron scattering is dominated by unavoidable phonon and ionized impurity scattering from singly charged H-donors. Extrinsic defect scattering related to material quality such as grain boundary and neutral impurity scattering was found to be negligible in crystallized films indicating that the carrier mobility is maximized. Furthermore, by comparison of the absolute H-concentration and the carrier density in crystallized films, it is deduced that <4% of the incorporated H is an active dopant in crystallized films. Therefore, it can be concluded that inactive H atoms do not (significantly) contribute to defect scattering, which potentially explains why In2O3:H films are capable of achieving a much higher carrier mobility than conventional In2O3:Sn (ITO).

  6. The role of nanoscale seed layers on the enhanced performance of niobium doped TiO2 thin films on glass

    DOE PAGES

    Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; O’Hayre, Ryan P.; Ginley, David S.; Berry, Joseph J.

    2016-09-09

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

  7. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass

    NASA Astrophysics Data System (ADS)

    Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; O’Hayre, Ryan P.; Ginley, David S.; Berry, Joseph J.

    2016-09-01

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.

  8. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    PubMed

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. PMID:27311112

  9. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass.

    PubMed

    Nikodemski, Stefan; Dameron, Arrelaine A; Perkins, John D; O'Hayre, Ryan P; Ginley, David S; Berry, Joseph J

    2016-01-01

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity. PMID:27610922

  10. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass

    PubMed Central

    Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; O’Hayre, Ryan P.; Ginley, David S.; Berry, Joseph J.

    2016-01-01

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity. PMID:27610922

  11. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    PubMed

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis.

  12. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass.

    PubMed

    Nikodemski, Stefan; Dameron, Arrelaine A; Perkins, John D; O'Hayre, Ryan P; Ginley, David S; Berry, Joseph J

    2016-09-09

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.

  13. Highly conducting and wide band gap phosphorous doped nc-Si-QD/a-SiC films as n-type window layers for solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-05-01

    Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH4 + CH4)-plasma with PH3 as the doping gas. The effect of PH3 flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si-QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10-2 S cm-1) are obtained, which could be appropriately used as n-type window layers for nc-Si solar cells in n-i-p configuration.

  14. Effect of final irrigating solution on smear layer removal and penetrability of the root canal sealer

    PubMed Central

    Shenoy, Amarnath; Ahmaduddin; Bolla, Nagesh; Raj, Sarath; Mandava, Pragna; Nayak, Shruti

    2014-01-01

    Objective: To evaluate the effect of final rinsing solution on smear layer removal through penetrability of the root canal sealer. Materials and Methods: Each of the 30 teeth selected was decoronated and the root length standardized at 16 mm measured from the apex of the tooth to the cementoenamel junction (CEJ). A size 10-k file was used and working length was determined by subtracting 1mm from the measured length so that the length of the sample was 15mm. A combination of step back and crown down technique was done and apical portion was prepared till H-file no. 30. 3% NaOCl was used during cleaning and shaping of the canals. Finally the teeth were divided into three groups of 10 teeth each. Group-I was irrigated with 17% EDTA, Group-II with TUBLICID plus, and Group-III with Biopure MTAD®. ISO 30 size gutta-percha points were selected as master cones. The Acroseal sealer was mixed with approximated concentration 0.1% fluorescent rhodamine B isothiocyanate dye. Obturation was done and after 48 hours, the roots were sectioned and subjected to confocal laser scanning microscopy. Results: Comparisons among the three groups were done by two-way analysis of variance (ANOVA) and Newman-Keuls multiple post-hoc procedures. The two-way ANOVA showed statistically highly significant results. The maximum depth of sealer penetration was observed in Group II followed by Group III and Group I. Conclusion: The use of -Tubulicid plus as a final irrigant provided better smear layer removal than Biopure a mixture of doxicycline, citric acid and a detergent (Tween 80) (MTAD®) and 17% EDTA. PMID:24554859

  15. DX center analysis in Sn-doped AlGaAs layer of double heterostructures

    NASA Astrophysics Data System (ADS)

    Kaniewski, J.; Kaniewska, M.; Ždánský, K.

    1987-12-01

    Capacitance as well as photovoltage methods have been used to analyze deep centers in an n-type AlGaAs:Sn layer of double heterostructures. It is suggested that the trap with thermal activation energy equal to ΔE2=0.33±0.02 eV is associated with the L minimum of AlGaAs and could be interpreted as a DX center related to Sn. The observed changes of deep center concentration in double heterostructures are due to different Al contents within the depletion region.

  16. Layered structure of anodic SiO{sub 2} films doped with phosphorus or boron

    SciTech Connect

    Mileshko, L. P.

    2009-12-15

    It is shown that anodic silicon oxide films deposited by reanodization (repeated anodic oxidation) of p- and n-type silicon in phosphate (1.5 M H{sub 3}PO{sub 4}), borate (1.5 M H{sub 3}BO{sub 3}), and nitrate (0.04 M NH{sub 4}NO{sub 3}) electrolytes based on tetrahydrofurfuryl alcohol have a three- or four-layer structure both before and after high-temperature annealing. It is assumed that this circumstance accounts for the nonuniform distribution of phosphorus and boron across the thickness of anodic SiO{sub 2}.

  17. Towards molecular doping effect on the electronic properties of two-dimensional layered materials

    NASA Astrophysics Data System (ADS)

    Arramel; Wang, Q.; Zheng, Y.; Zhang, W.; Wee, A. T. S.

    2016-08-01

    In recent advancements of an atomically-thick, flat, and flexible two-dimensional (2D) material has attracted tremendous interest. Graphene and 2D layered semiconductors such as transition-metal dichalcogenides (TMDs) pave the way on the exploration of their unique layer-number dependent electronic and optical properties. The latter have a promising future on the microelectronics due to their sizeable bandgaps, i.e., the crossover from indirect-direct bandgap transition occurs as the thickness of TMDs is decreased to a monolayer. In this work, we systematically investigated the optimum growth parameter of chemical vapor deposition of MoS2 and WSe2, respectively. It turns out that the temperature and the duration growth plays role to produce a large area of TMDs monolayers. Our studies suggest that a well-controlled high quality of TMDs could serves as template and interlayer in the TMD-organic heterointerfaces. Thus it is potentially an attractive approach towards a wide-ranging application in optoelectronics, nanoelectronics and energy-harvesting applications.

  18. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    NASA Astrophysics Data System (ADS)

    Kizu, Takio; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto; Tsukagoshi, Kazuhito

    2016-07-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (VO) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense VO in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  19. Phosphorus and nitrogen dual-doped few-layered porous graphene: a high-performance anode material for lithium-ion batteries.

    PubMed

    Ma, Xinlong; Ning, Guoqing; Qi, Chuanlei; Xu, Chenggen; Gao, Jinsen

    2014-08-27

    Few-layered graphene networks composed of phosphorus and nitrogen dual-doped porous graphene (PNG) are synthesized via a MgO-templated chemical vapor deposition (CVD) using (NH4)3PO4 as N and P source. P and N atoms have been substitutionally doped in graphene networks since the doping takes place at the same time with the graphene growth in the CVD process. Raman spectra show that the amount of defects or disorders increases after P and N atoms are incorporated into graphene frameworks. The doping levels of P and N measured by X-ray photoelectron spectroscopy are 0.6 and 2.6 at %, respectively. As anodes for Li ion batteries (LIBs), the PNG electrode exhibits high reversible capacity (2250 mA h g(-1) at the current density of 50 mA g(-1)), excellent rate capability (750 mA h g(-1) at 1000 mA g(-1)), and satisfactory cycling stability (no capacity decay after 1500 cycles), showing much enhanced electrode performance as compared to the undoped few-layered porous graphene. Our results show that the PNG is a promising candidate for anode materials in high-rate LIBs.

  20. Numerical Analysis of In2S3 Layer Thickness, Band Gap and Doping Density for Effective Performance of a CIGS Solar Cell Using SCAPS

    NASA Astrophysics Data System (ADS)

    Khoshsirat, Nima; Md Yunus, Nurul Amziah

    2016-11-01

    The effect of indium sulfide buffer layer's geometrical and electro-optical properties on the Copper-Indium-Gallium-diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost impacts of buffer layer thickness, band gap, and doping density on the cells output parameters such as open circuit voltage, short circuit current density, fill factor, and the efficiency were extensively simulated. The results show that the cell efficiency, which was innovatively illustrated as a two-dimensional contour plot function, depends on the buffer layer electron affinity and doping density by keeping all the other parameters at a steady state. The analysis, which was made from this numerical simulation, has revealed that the optimum electron affinity is to be 4.25 ± 0.2 eV and donor density of the buffer layer is over 1× 10 ^{17} cm^{-3}. It is also shown that the cell with an optimum thin buffer layer has higher performance and efficiency due to the lower optical absorption of the buffer layer.

  1. Nitrogen-doping of bulk and nanotubular TiO2 photocatalysts by plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Creatore, Mariadriana; Ma, Quan-Bao; El Boukili, Aishah; Gao, Lu; Verheijen, Marcel A.; Verhoeven, M. W. G. M. (Tiny); Hensen, Emiel. J. M.

    2015-03-01

    Plasma-assisted atomic layer deposition (PA-ALD) was adopted to deposit TiO2-xNx ultrathin layers on Si wafers, calcined Ti foils and nanotubular TiO2 arrays. A range of N content and chemical bond configurations were obtained by varying the background gas (O2 or N2) during the Ti precursor exposure, while the N2/H2-fed inductively coupled plasma exposure time was varied between 2 and 20 s. On calcined Ti foils, a positive effect from N doping on photocurrent density was observed when O2 was the background gas with a short plasma exposure time (5 and 10 s). This correlates with the presence of interstitial N states in the TiO2 with a binding energy of 400 eV (Ninterst) as measured by X-ray photoelectron spectroscopy. A longer plasma time or the use of N2 as background gas results in formation of N state with a binding energy of 396 eV (Nsubst) and very low photocurrents. These Nsubst are linked to the presence of Ti3+, which act as detrimental recombination center for photo-generated electron-hole pairs. On contrary, PA-ALD treated nanotubular TiO2 arrays show no variation of photocurrent density (with respect to the pristine nanotubes) upon different plasma exposure times and when the O2 recipe was adopted. This is attributed to constant N content in the PA-ALD TiO2-xNx, regardless of the adopted recipe.

  2. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets.

    PubMed

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-01-01

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics. PMID:27010509

  3. Phosphorus-Doped Carbon Nitride Tubes with a Layered Micro-nanostructure for Enhanced Visible-Light Photocatalytic Hydrogen Evolution.

    PubMed

    Guo, Shien; Deng, Zhaopeng; Li, Mingxia; Jiang, Baojiang; Tian, Chungui; Pan, Qingjiang; Fu, Honggang

    2016-01-26

    Phosphorus-doped hexagonal tubular carbon nitride (P-TCN) with the layered stacking structure was obtained from a hexagonal rod-like single crystal supramolecular precursor (monoclinic, C2/m). The production process of P-TCN involves two steps: 1) the precursor was prepared by self-assembly of melamine with cyanuric acid from in situ hydrolysis of melamine under phosphorous acid-assisted hydrothermal conditions; 2) the pyrolysis was initiated at the center of precursor under heating, thus giving the hexagonal P-TCN. The tubular structure favors the enhancement of light scattering and active sites. Meanwhile, the introduction of phosphorus leads to a narrow band gap and increased electric conductivity. Thus, the P-TCN exhibited a high hydrogen evolution rate of 67 μmol h(-1) (0.1 g catalyst, λ >420 nm) in the presence of sacrificial agents, and an apparent quantum efficiency of 5.68 % at 420 nm, which is better than most of bulk g-C3 N4 reported. PMID:26692105

  4. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets.

    PubMed

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-03-24

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics.

  5. SEMICONDUCTOR DEVICES: A Ga-doped ZnO transparent conduct layer for GaN-based LEDs

    NASA Astrophysics Data System (ADS)

    Zhen, Liu; Xiaofeng, Wang; Hua, Yang; Yao, Duan; Yiping, Zeng

    2010-09-01

    An 8 μm thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2:24 ± 0:21 eV) resulting from the formation of Ga2O3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage.

  6. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets

    NASA Astrophysics Data System (ADS)

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-03-01

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics.

  7. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets

    PubMed Central

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-01-01

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics. PMID:27010509

  8. Phosphorus-Doped Carbon Nitride Tubes with a Layered Micro-nanostructure for Enhanced Visible-Light Photocatalytic Hydrogen Evolution.

    PubMed

    Guo, Shien; Deng, Zhaopeng; Li, Mingxia; Jiang, Baojiang; Tian, Chungui; Pan, Qingjiang; Fu, Honggang

    2016-01-26

    Phosphorus-doped hexagonal tubular carbon nitride (P-TCN) with the layered stacking structure was obtained from a hexagonal rod-like single crystal supramolecular precursor (monoclinic, C2/m). The production process of P-TCN involves two steps: 1) the precursor was prepared by self-assembly of melamine with cyanuric acid from in situ hydrolysis of melamine under phosphorous acid-assisted hydrothermal conditions; 2) the pyrolysis was initiated at the center of precursor under heating, thus giving the hexagonal P-TCN. The tubular structure favors the enhancement of light scattering and active sites. Meanwhile, the introduction of phosphorus leads to a narrow band gap and increased electric conductivity. Thus, the P-TCN exhibited a high hydrogen evolution rate of 67 μmol h(-1) (0.1 g catalyst, λ >420 nm) in the presence of sacrificial agents, and an apparent quantum efficiency of 5.68 % at 420 nm, which is better than most of bulk g-C3 N4 reported.

  9. Distinct oxygen hole doping in different layers of Sr₂CuO4-δ/La₂CuO₄ superlattices

    SciTech Connect

    Smadici, S.; Lee, J. C. T.; Rusydi, A.; Logvenov, G.; Bozovic, I.; Abbamonte, P.

    2012-03-28

    X-ray absorption in Sr₂CuO4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲xoptimal in bulk La2-xSrxCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

  10. Suppression of irreversible capacity loss in Li-rich layered oxide by fluorine doping

    NASA Astrophysics Data System (ADS)

    Song, Jay Hyok; Kapylou, Andrei; Choi, Hee Sung; Yu, Byong Yong; Matulevich, Evegeniya; Kang, Sun Ho

    2016-05-01

    Li[Li1/6Ni1/6Co1/6Mn1/2]O2-xFx (x = 0.00 to 0.07) materials were synthesized with low temperature heat treatment (700 °C) and their electrochemical performances were evaluated. With the addition of fluorine, the reversible capacity significantly increased as the irreversibility was suppressed during the first cycle. The reduction of irreversibility was mainly attributed to the enhanced first cycle efficiency of Li2MnO3-like component after the fluorine addition. By combining results of the X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), In-situ X-ray absorption spectroscopy (XAS) analyses, and first principle calculations, it was proposed that the presence of fluorine facilitated the reduction of cobalt and manganese ions in Li-rich layered oxide, and that the reduced transition metal (TM) ions suppressed structural changes.

  11. Effectiveness of compacted soil liner as a gas barrier layer in the landfill final cover system.

    PubMed

    Moon, Seheum; Nam, Kyoungphile; Kim, Jae Young; Hwan, Shim Kyu; Chung, Moonkyung

    2008-01-01

    A compacted soil liner (CSL) has been widely used as a single barrier layer or a part of composite barrier layer in the landfill final cover system to prevent water infiltration into solid wastes for its acceptable hydraulic permeability. This study was conducted to test whether the CSL was also effective in prohibiting landfill gas emissions. For this purpose, three different compaction methods (i.e., reduced, standard, and modified Proctor methods) were used to prepare the soil specimens, with nitrogen as gas, and with water and heptane as liquid permeants. Measured gas permeability ranged from 2.03 x 10(-10) to 4.96 x 10(-9) cm(2), which was a magnitude of two or three orders greater than hydraulic permeability (9.60 x 10(-13) to 1.05 x 10(-11) cm(2)). The difference between gas and hydraulic permeabilities can be explained by gas slippage, which makes gas more permeable, and by soil-water interaction, which impedes water flow and then makes water less permeable. This explanation was also supported by the result that a liquid permeability measured with heptane as a non-polar liquid was similar to the intrinsic gas permeability. The data demonstrate that hydraulic requirement for the CSL is not enough to control the gas emissions from a landfill. PMID:17964132

  12. Effectiveness of compacted soil liner as a gas barrier layer in the landfill final cover system.

    PubMed

    Moon, Seheum; Nam, Kyoungphile; Kim, Jae Young; Hwan, Shim Kyu; Chung, Moonkyung

    2008-01-01

    A compacted soil liner (CSL) has been widely used as a single barrier layer or a part of composite barrier layer in the landfill final cover system to prevent water infiltration into solid wastes for its acceptable hydraulic permeability. This study was conducted to test whether the CSL was also effective in prohibiting landfill gas emissions. For this purpose, three different compaction methods (i.e., reduced, standard, and modified Proctor methods) were used to prepare the soil specimens, with nitrogen as gas, and with water and heptane as liquid permeants. Measured gas permeability ranged from 2.03 x 10(-10) to 4.96 x 10(-9) cm(2), which was a magnitude of two or three orders greater than hydraulic permeability (9.60 x 10(-13) to 1.05 x 10(-11) cm(2)). The difference between gas and hydraulic permeabilities can be explained by gas slippage, which makes gas more permeable, and by soil-water interaction, which impedes water flow and then makes water less permeable. This explanation was also supported by the result that a liquid permeability measured with heptane as a non-polar liquid was similar to the intrinsic gas permeability. The data demonstrate that hydraulic requirement for the CSL is not enough to control the gas emissions from a landfill.

  13. One-step synthesis of layered yttrium hydroxides in immiscible liquid–liquid systems: Intercalation of sterically-bulky hydrophobic organic anions and doping of europium ions

    SciTech Connect

    Watanabe, Mebae; Fujihara, Shinobu

    2014-02-15

    Inorganic–organic layered rare-earth compounds were synthesized on the basis of a biphasic liquid–liquid system in one pot. Layered yttrium hydroxides (LYHs) were chosen as a host material for the intercalation of hydrophobic organic guest anions such as benzoate, sebacate, or laurate. In a typical synthesis, an organic phase dissolving carboxylic acid was placed in contact with an equal amount of an aqueous phase dissolving yttrium nitrate n-hydrate and urea. At elevated temperatures up to 80 °C, urea was hydrolyzed to release hydroxyl anions which were used to form yttrium hydroxide layers. LYHs were then precipitated with the intercalation of carboxylate anions delivered from the organic phase under the distribution law. The structure and the morphology of the LYHs could be modulated by the intercalated anions. Doped with Eu{sup 3+} ions, the LYHs exhibited red photoluminescence which was enhanced by the intercalated anions due to the antenna effect. - Graphical abstract: The Eu{sup 3+}-doped layered yttrium hydroxide exhibits intense red photoluminescence after intercalation of benzoate ions. Display Omitted - Highlights: • Immiscible biphasic liquid systems were introduced to synthesize layered yttrium hydroxides. • The temperature of the biphasic systems does not exceed 80 °C in one step of the synthesis. • Hydrophobic organic anions were intercalated between the hydroxide layers in one pot. • Structure and morphology of the hydroxides were modulated by changing the kind of organic anions. • Eu{sup 3+}-doping led to red luminescence from the hydroxides in association with the intercalated organic anions.

  14. Effect of manganese doping on the size effect of lead zirconate titanate thin films and the extrinsic nature of 'dead layers'

    NASA Astrophysics Data System (ADS)

    Lou, X. J.; Wang, J.

    2010-02-01

    We have investigated the size effect in lead zirconate titanate (PZT) thin films with a range of manganese (Mn) doping concentrations. We found that the dynamic size effect in the conventional Pt/PZT/Pt thin-film capacitors could be systematically reduced and almost completely eliminated by increasing Mn doping concentration. The interfacial layer at the electrode-film interface appears to disappear almost entirely for the PZT films with ~2% Mn doping levels, confirmed by the fits using the conventional 'in-series capacitor' model. Our work indicates that the dynamic size effect in ferroelectrics is extrinsic in nature, supporting the work by Saad et al. Other implications of our results have also been discussed. By comparing a variety of experimental studies in the literature we propose a scenario that the 'dead layer' between PZT (or barium strontium titanate, BST) and metal electrodes such as Pt and Au might have a defective pyrochlore/fluorite-like structure (possibly with a small portion of ferroelectric perovskite phase). This scenario is then generalized by including the effect of the grain-boundary dead layer on the collapse of the dielectric constant in thinner films.

  15. Room temperature ferromagnetism of Cr-doped In2O3 bi-layer consisted of a triangular crystal-amorphous interface

    NASA Astrophysics Data System (ADS)

    Jhong, Dai-Jhen; Chen, Bo-Yu; Hsu, Chun-Yu; Liang, Yaun-Chao; Chou, Hsiung

    In2O3 film is a very conductive and can be modified to exhibit room temperature ferromagnetism upon doping of Cr. In this study, we developed a method, based on the RF power, to control the Cr-doped In2O3 (CIO) thin-films to form a crystalline phase, at a high power region, or an amorphous phase, at a low power region. When the RF power is set at a medium power, the CIO film self-assemble into a two layers system consisted of crystalline and amorphous layers with interface manifests zig-zag feature. The two layer system has a saturation magnetization Ms, of ~0.27 to ~1.78 emu/c.c. with increase of Cr-doping content. In contrast, the Ms of the amorphous films are ~0.45 emu/c.c independent of Cr content. Electron energy loss spectroscopy (EELS) measurements suggested that Cr existed in mixed oxidation states in all films. The Cr with lower oxidation state prefers crystalline structure, while the higher oxidation state Cr prefers an amorphous structure. Due to this charge imbalance, a transport of charge across the interface originates the ferromagnetic interaction, and hence, we observe enhanced MS in crystal-amorphous interface system. Corresponding Author.

  16. Polarization induced doped transistor

    DOEpatents

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  17. Estimation on the self recovery behavior of low-conductivity layer in landfill final cover by laboratory conductivity tests.

    PubMed

    Kwon, O; Park, J

    2006-11-01

    This study examined the application of a Self Recovering Sustainable Layer (SRSL) as a landfill final cover. Low-conductivity layers in landfill covers are known to have problems associated with cracking as a result of the differential settlement or climatic changes. A SRSL is defined as a layer with chemical properties that reduces the increased hydraulic conductivity resulting from cracking by forming low-conductivity precipitates of chemicals contained in the layer. In this study, the formation of precipitates was confirmed using a batch test, spectroscopic analysis and mineralogical speciation tests. The possibility of secondary contamination due to the chemicals used for recovery was evaluated using a leaching test. A laboratory conductivity test was performed on a single layer composed of each chemical as well as on a 2-layer system. The recovery performance of the SRSL was estimated by developing artificial cracks in the specimens and observing the change in hydraulic conductivity as a function of time. In the laboratory conductivity test, the hydraulic conductivity of a 2-layer system as well as those of the individual layers that comprise the 2-layer system was estimated. In addition sodium ash was found to enhance the reduction in conductivity. A significant increase in conductivity was observed after the cracks developed but this was reduced with time, which indicated that the SRSL has a proper recovering performance. In conclusion, a SRSL can be used as a landfill final cover that could maintain low-conductivity even after the serious damages due to settlement.

  18. Insulating-layer formation of metallic LaNiO3 on Nb-doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Yoo, Hyang Keun; Chang, Young Jun; Moreschini, Luca; Kim, Hyeong-Do; Sohn, Chang Hee; Sinn, Soobin; Oh, Ji Seop; Kuo, Cheng-Tai; Bostwick, Aaron; Rotenberg, Eli; Noh, Tae Won

    2015-03-01

    We investigated the electronic structures of strongly correlated metallic LaNiO3 (LNO) and semiconducting Nb-doped SrTiO3 (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO3 and LaAlO3, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.

  19. Insulating-layer formation of metallic LaNiO{sub 3} on Nb-doped SrTiO{sub 3} substrate

    SciTech Connect

    Yoo, Hyang Keun; Kim, Hyeong-Do Sohn, Chang Hee; Sinn, Soobin; Oh, Ji Seop; Kuo, Cheng-Tai; Noh, Tae Won; Chang, Young Jun; Moreschini, Luca; Bostwick, Aaron; Rotenberg, Eli

    2015-03-23

    We investigated the electronic structures of strongly correlated metallic LaNiO{sub 3} (LNO) and semiconducting Nb-doped SrTiO{sub 3} (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO{sub 3} and LaAlO{sub 3}, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.

  20. Enhanced photoelectrochemical water splitting performance of TiO2 nanotube arrays coated with an ultrathin nitrogen-doped carbon film by molecular layer deposition

    NASA Astrophysics Data System (ADS)

    Tong, Xili; Yang, Peng; Wang, Yunwei; Qin, Yong; Guo, Xiangyun

    2014-05-01

    Vertically oriented TiO2 nanotube arrays (TNTAs) were conformally coated with an ultrathin nitrogen-doped (N-doped) carbon film via the carbonization of a polyimide film deposited by molecular layer deposition and simultaneously hydrogenated, thereby creating a core/shell nanostructure with a precisely controllable shell thickness. The core/shell nanostructure provides a larger heterojunction interface to substantially reduce the recombination of photogenerated electron-hole pairs, and hydrogenation enhances solar absorption of TNTAs. In addition, the N-doped carbon film coating acts as a high catalytic active surface for oxygen evolution reaction, as well as a protective film to prevent hydrogen-treated TiO2 nanotube oxidation by electrolyte or air. As a result, the N-doped carbon film coated TNTAs displayed remarkably improved photocurrent and photostability. The TNTAs with a N-doped carbon film of ~1 nm produces a current density of 3.6 mA cm-2 at 0 V vs. Ag/AgCl under the illumination of AM 1.5G (100 mW cm-2), which represents one of the highest values achieved with modified TNTAs. Therefore, we propose that ultrathin N-doped carbon film coating on materials is a viable approach to enhance their PEC water splitting performance.Vertically oriented TiO2 nanotube arrays (TNTAs) were conformally coated with an ultrathin nitrogen-doped (N-doped) carbon film via the carbonization of a polyimide film deposited by molecular layer deposition and simultaneously hydrogenated, thereby creating a core/shell nanostructure with a precisely controllable shell thickness. The core/shell nanostructure provides a larger heterojunction interface to substantially reduce the recombination of photogenerated electron-hole pairs, and hydrogenation enhances solar absorption of TNTAs. In addition, the N-doped carbon film coating acts as a high catalytic active surface for oxygen evolution reaction, as well as a protective film to prevent hydrogen-treated TiO2 nanotube oxidation by

  1. Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices.

    PubMed

    Srathongluan, Pornpimol; Vailikhit, Veeramol; Teesetsopon, Pichanan; Choopun, Supab; Tubtimtae, Auttasit

    2016-11-01

    This work demonstrates the synthesis of a novel double-layered Cu2-xTe/MnTe structure on a WO3 photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu2-xTe(17) ∼5-10nm and MnTe(3) ∼2nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu2-xTe(17)/MnTe(11) are ∼50 and 150nm, respectively. The larger size after doping is due to the interconnecting of nanoparticles as a network-like structure. A new alignment of the energy band is constructed after boron/MnTe(11) is coated on boron/Cu2-xTe nanoparticles (NPs), leading to a narrower Eg equal to 0.58eV. Then, the valence band maximum (VBM) and conduction band minimum (CBM) with a trap state are also up-shifted to near the CBM of WO3, leading to the shift of a Fermi level for ease of electron injection. The best efficiency of 1.41% was yielded for the WO3/boron-doped [Cu2-xTe(17)/MnTe(11)] structure with a photocurrent density (Jsc)=16.43mA/cm(2), an open-circuit voltage (Voc)=0.305V and a fill factor (FF)=28.1%. This work demonstrates the feasibility of this double-layered structure with doping material as a solar absorber material. PMID:27451035

  2. Cobalt Ferrite Bearing Nitrogen-Doped Reduced Graphene Oxide Layers Spatially Separated with Microporous Carbon as Efficient Oxygen Reduction Electrocatalyst.

    PubMed

    Kashyap, Varchaswal; Singh, Santosh K; Kurungot, Sreekumar

    2016-08-17

    The present work discloses how high-quality dispersion of fine particles of cobalt ferrite (CF) could be attained on nitrogen-doped reduced graphene oxide (CF/N-rGO) and how this material in association with a microporous carbon phase could deliver significantly enhanced activity toward electrochemical oxygen reduction reaction (ORR). Our study indicates that the microporous carbon phase plays a critical role in spatially separating the layers of CF/N-rGO and in creating a favorable atmosphere to ensure the seamless distribution of the reactants to the active sites located on CF/N-rGO. In terms of the ORR current density, the heat-treated hybrid catalyst at 150 °C (CF/N-rGO-150) is found to be clearly outperforming (7.4 ± 0.5 mA/cm(2)) the state-of-the-art 20 wt % Pt-supported carbon catalyst (PtC) (5.4 ± 0.5 mA/cm(2)). The mass activity and stability of CF-N-rGO-150 are distinctly superior to PtC even after 5000 electrochemical cycles. As a realistic system level exploration of the catalyst, testing of a primary zinc-air battery could be demonstrated using CF/N-rGO-150 as the cathode catalyst. The battery is giving a galvanostatic discharge time of 15 h at a discharge current density of 20 mA/cm(2) and a specific capacity of ∼630 mAh g(-1) in 6 M KOH by using a Zn foil as the anode. Distinctly, the battery performance of this system is found to be superior to that of PtC in less concentrated KOH solution as the electrolyte. PMID:27464229

  3. Eu{sup 3+} luminescence enhancement by intercalation of benzenepolycarboxylic guests into Eu{sup 3+}-doped layered gadolinium hydroxide

    SciTech Connect

    Gu, Qingyang; Pan, Guohua; Ma, Teng; Huang, Gailing; Sun, Genban; Ma, Shulan; Yang, Xiaojing

    2014-05-01

    Graphical abstract: Two benzenepolycarboxylic sensitizers, 1,3,5-benzenetricarboxylic acid (BTA) and 1,2,4,5-benzenetetracarboxylic acid (BA), were intercalated into NO{sub 3}–LGdH:Eu, in which different structures of the compounds resulted in varied arrangement in the gallery. The two organic compounds especially BA markedly enhanced the red luminescence of Eu{sup 3+} due to efficient energy transfer between the organic guests and Eu{sup 3+} centers. - Highlights: • We report the intercalation of benzenepolycarboxylic organic sensitizers into LRH. • We study the intercalation structure and the arrangement of the interlayer guests. • The two organic compounds can markedly enhance the luminescence of Eu{sup 3+}. • There exists efficient energy transfer between organic guests and Eu{sup 3+} centers. • This material opens a route for fabricating new multifunctional luminescent materials. - Abstract: Two benzenepolycarboxylic organic sensitizers, 1,3,5-benzenetricarboxylic acid (BTA) and 1,2,4,5-benzenetetracarboxylic acid (BA), were intercalated into the gallery of NO{sub 3}{sup −} type Eu{sup 3+}-doped layered gadolinium hydroxide (NO{sub 3}–LGdH:Eu). CHN analysis, FTIR, and SEM were employed to characterize the intercalation structures of the as-prepared organic/inorganic hybrids. The area per unit charge (S{sub charge}) was used to explain the intercalation structure and the arrangement of the interlayer guests. Different structures of the two organic compounds resulted in varied arrangement of guests. Photoluminescence studies indicated that both of the two organic compounds especially BA markedly enhanced the red luminescence of Eu{sup 3+} due to efficient energy transfer between the organic guests and Eu{sup 3+} centers.

  4. Green Emission of Tb-doped Mg-Al Layered Double Hydroxide Response to L-lysine.

    PubMed

    Chen, Yufeng; Bao, Yao; Wang, Xiaoqing

    2016-05-01

    The paper describes a study on the green emission of a Tb-doped Mg-Al layered double hydroxide (Tb-LDH) response to L-lysine (Lys). Fluorescent study was found that the Tb-LDH exhibited strong green emission due to (5)D4-(7)FJ (J = 5, 6) transition of Tb(3+), and the green emission almost quenched while the Tb-LDH was exposed to 0.01, 0.05, 0.1, 0.25, and 0.5 mol·L(-1) Lys solution, respectively. Meanwhile the emission attributed to Lys markedly increased as the Tb-LDH was exposed to 0.01 and 0.05 mol·L(-1) Lys solution, then decreased as the concentration of Lys solution further increased to 0.5 from 0.05 mol·L(-1). The green emission of Tb-LDH optimal response to Lys happened at 0.05 mol·L(-1) of Lys solution. XRD results revealed that no reflections ascribed to Lys appeared in the composites of Tb-LDH and Lys. IR spectra suggested that the IR spectra of Tb-LDH obviously changed after it was exposed to Lys solution. These results indicated that the green emission of Tb-LDH response to Lys was possibly owing to interaction between the Tb-LDH and Lys. Moreover, this interaction between the Tb-LDH and Lys may be resulted from absorption. The green emission of Tb-LDH response to Lys would be potential application in detecting L-lysine.

  5. Cobalt Ferrite Bearing Nitrogen-Doped Reduced Graphene Oxide Layers Spatially Separated with Microporous Carbon as Efficient Oxygen Reduction Electrocatalyst.

    PubMed

    Kashyap, Varchaswal; Singh, Santosh K; Kurungot, Sreekumar

    2016-08-17

    The present work discloses how high-quality dispersion of fine particles of cobalt ferrite (CF) could be attained on nitrogen-doped reduced graphene oxide (CF/N-rGO) and how this material in association with a microporous carbon phase could deliver significantly enhanced activity toward electrochemical oxygen reduction reaction (ORR). Our study indicates that the microporous carbon phase plays a critical role in spatially separating the layers of CF/N-rGO and in creating a favorable atmosphere to ensure the seamless distribution of the reactants to the active sites located on CF/N-rGO. In terms of the ORR current density, the heat-treated hybrid catalyst at 150 °C (CF/N-rGO-150) is found to be clearly outperforming (7.4 ± 0.5 mA/cm(2)) the state-of-the-art 20 wt % Pt-supported carbon catalyst (PtC) (5.4 ± 0.5 mA/cm(2)). The mass activity and stability of CF-N-rGO-150 are distinctly superior to PtC even after 5000 electrochemical cycles. As a realistic system level exploration of the catalyst, testing of a primary zinc-air battery could be demonstrated using CF/N-rGO-150 as the cathode catalyst. The battery is giving a galvanostatic discharge time of 15 h at a discharge current density of 20 mA/cm(2) and a specific capacity of ∼630 mAh g(-1) in 6 M KOH by using a Zn foil as the anode. Distinctly, the battery performance of this system is found to be superior to that of PtC in less concentrated KOH solution as the electrolyte.

  6. Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2.

    PubMed

    Vasu, K; Sreedhara, M B; Ghatak, J; Rao, C N R

    2016-03-01

    Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [1̅10]TiO2//[011̅0]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2. PMID:26963716

  7. Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2.

    PubMed

    Vasu, K; Sreedhara, M B; Ghatak, J; Rao, C N R

    2016-03-01

    Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [1̅10]TiO2//[011̅0]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2.

  8. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.

    PubMed

    Zheng, Li; Cheng, Xinhong; Yu, Yuehui; Xie, Yahong; Li, Xiaolong; Wang, Zhongjian

    2015-02-01

    Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements. PMID:25519447

  9. Role of magnesium during spontaneous formation of a calcium phosphate layer at the periphery of a bioactive glass coating doped with MgO

    NASA Astrophysics Data System (ADS)

    Jallot, E.

    2003-04-01

    The prerequisite for bioactive glasses to bond to living bone is the formation of biologically active apatites on their surface in the body. Reactions and bioactivity mechanisms between bioactive glasses and bone depend on the glass composition. Our results demonstrate this property of bioactivity for the studied bioactive glass. The bioactive glass doped with MgO leads to the formation of a Ca-P-Mg rich layer on top of a pure Si layer. Ca, P and Mg elements diffuse through the Si rich layer which seems to act as a protective diffusion barrier leading to t1/2 leaching kinetics. This paper demonstrates for the first time, the presence of Mg in the Ca-P rich layer at the interface between the bioactive glass and bone. However, magnesium influences the formation and the evolution of the apatite layer. Magnesium has synergistic effects on the crystallinity and solubility of apatites. These phenomena can promote a greater dissolution of the apatite precipitates in the studied bioactive glass. Determination of supersaturations values permits to better understand growth and dissolution of precipitates forming the apatite-Mg layer. Measurements of supersaturations for Ca, P and Mg were consistent before 3 months and after 6 months. Before 3 months, the apatite-Mg layer grows and after 3 months this layer is in dissolution.

  10. Niobium Doping Effects on TiO2 Mesoscopic Electron Transport Layer-Based Perovskite Solar Cells.

    PubMed

    Kim, Dong Hoe; Han, Gill Sang; Seong, Won Mo; Lee, Jin-Wook; Kim, Byeong Jo; Park, Nam-Gyu; Hong, Kug Sun; Lee, Sangwook; Jung, Hyun Suk

    2015-07-20

    Perovskite solar cells (PSCs) are the most promising candidates as next-generation solar energy conversion systems. To design a highly efficient PSC, understanding electronic properties of mesoporous metal oxides is essential. Herein, we explore the effect of Nb doping of TiO2 on electronic structure and photovoltaic properties of PSCs. Light Nb doping (0.5 and 1.0 at %) increased the optical band gap slightly, but heavy doping (5.0 at %) distinctively decreased it. The relative Fermi level position of the conduction band is similar for the lightly Nb-doped TiO2 (NTO) and the undoped TiO2 whereas that of the heavy doped NTO decreased by as much as ∼0.3 eV. The lightly doped NTO-based PSCs exhibit 10 % higher efficiency than PSCs based on undoped TiO2 (from 12.2 % to 13.4 %) and 52 % higher than the PSCs utilizing heavy doped NTO (from 8.8 % to 13.4 %), which is attributed to fast electron injection/transport and preserved electron lifetime, verified by transient photocurrent decay and impedance studies.

  11. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NASA Astrophysics Data System (ADS)

    Macco, B.; Deligiannis, D.; Smit, S.; van Swaaij, R. A. C. M. M.; Zeman, M.; Kessels, W. M. M.

    2014-12-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by atomic layer deposition (ALD). It is shown that the ALD process, as opposed to sputtering, does not impair the chemical passivation. However, the field-effect passivation is reduced by the ZnO:Al. The resulting decrease in low injection-level lifetime can be tuned by changing the ZnO:Al doping level (carrier density = 7 × 1019-7 × 1020 cm-3), which is explained by a change in the TCO workfunction. Additionally, it is shown that a ˜10-15 nm ALD ZnO:Al layer is sufficient to mitigate damage to the a-Si:H by subsequent sputtering, which is correlated to ALD film closure at this thickness.

  12. Surface damages in diamond by Ar/O{sub 2} plasma and their effect on the electrical and electrochemical characteristics of boron-doped layers

    SciTech Connect

    Denisenko, A.; Pietzka, C.; Scharpf, J.; Kohn, E.; Romanyuk, A.

    2010-10-15

    Epitaxial single crystal and boron-doped diamond layers were exposed to reactive ion etching in Ar/O{sub 2} plasma (rf power of 25 W and self-bias of 100 V); and the electrical, structural, and electrochemical characteristics of the exposed surface were investigated. Angle-resolved x-ray photoemission spectroscopy (XPS) measurements revealed a nonuniform layer of amorphous carbon at the exposed surface with an average thickness of approximately 4 nm, as confirmed also by atomic force microscopy profiling of selectively etched areas. On highly boron-doped diamond, the plasma-induced damages resulted also in a nonconductive surface layer. This damaged and insulating surface layer remained resistant to graphite-etching chemicals and to rf oxygen plasma but it was removed completely in microwave hydrogen plasma at 700 deg. C. The surface characteristics after the H-plasma process followed by wet chemical oxidation were restored back to the initial state, as confirmed by XPS. Such ''recovery'' treatment had been applied to an all-diamond submicrometer electrode array initially patterned by an Ar/O{sub 2} plasma etching. The electrochemical characteristics of this electrode array were improved by more than two orders of magnitude, approaching theoretical limit for the given geometrical configuration.

  13. Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition.

    PubMed

    Lee, Ju Ho; Lee, Jae-Won; Hwang, Sooyeon; Kim, Sang Yun; Cho, Hyung Koun; Lee, Jeong Yong; Park, Jin-Seong

    2012-07-01

    Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.

  14. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    SciTech Connect

    Kalkofen, Bodo Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P.; Garke, Bernd; Lisker, Marco; Gargouri, Hassan

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  15. ``Flash'' synthesis of ``giant'' Mn-doped CdS/ZnSe/ZnS nanocrystals with ZnSe layer as hole quantum-well

    NASA Astrophysics Data System (ADS)

    Xu, Ruilin; Zhang, Jiayu

    Usually, exciton-Mn energy transfer in Mn-doped CdS/ZnS nanocrystals (NCs) can readily outcompete the exciton trapping by an order of magnitude. However, with the accumulation of non-radiative defects in the giant shell during the rapid growth of the thick shell (up to ~20 monolayers in no more than 10 minutes), the photoluminescence (PL) quantum yield of this kind of ``giant'' NCs is significantly reduced by the accumulation of non-radiative defects during the rapid growth of thick shell. That is because the exciton-Mn energy transfer in Mn-doped CdS/ZnS NCs is significantly inhibited by the hole trapping as the major competing process, resulting from the insufficient hole-confinement in CdS/ZnS NCs. Accordingly ``flash'' synthesis of giant Mn-doped CdS/ZnSe/ZnS NCs with ZnSe layer as hole quantum-well is developed to suppress the inhibition. Meanwhile Mn2+ PL peak changes profoundly from ~620 nm to ~540 nm after addition of ZnSe layer. Studies are under the way to explore the relevant mechanisms.

  16. Graphene oxide and sulfonated polyanion co-doped hydrogel films for dual-layered membranes with superior hemocompatibility and antibacterial activity.

    PubMed

    He, Chao; Shi, Zhen-Qiang; Cheng, Chong; Lu, Hua-Qing; Zhou, Mi; Sun, Shu-Dong; Zhao, Chang-Sheng

    2016-10-20

    In this study, a new kind of hemocompatible and antibacterial dual-layered polymeric membrane was fabricated by coating a top layer of graphene oxide and a sulfonated polyanion co-doped hydrogel thin film (GO-SPHF) on a bottom membrane substrate. After a two-step spin-coating of casting solutions on glass plates, dual-layered membranes were obtained by a liquid-liquid phase inversion method. The GO-SPHF composite polyethersulfone (PES) membranes (PES/GO-SPHF) showed top layers with obviously large porous structures. The chemical composition tests indicated that there were abundant hydrophilic groups enriched on the membrane surface. The examination of membrane mechanical properties indicated that the composite membranes exhibited only slightly decreased performance compared to pristine PES membranes. Moreover, to validate the potential applications of this novel dual-layered membrane in diverse fields, we tested the hemocompatibility and antibacterial activity of the membranes, respectively. Notably, the PES/GO-SPHF membranes showed highly improved in vitro hemocompatibility, such as good anti-coagulant activity, suppressed platelet adhesion and activation, low inflammation potential, and good red blood cell compatibility. Furthermore, the dual-layered membranes exhibited robust antibacterial ability after in situ loading of Ag-nanoparticles with excellent bactericidal capability to both Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus). Due to the integration of the porous membrane structure, good mechanical strength, excellent hemocompatibility, as well as robust bactericidal capability, the GO and sulfonated polyanion co-doped dual-layered membranes may open up a new protocol to greatly demonstrate the potential application of polymeric membranes for clinical hemodialysis and many other biomedical therapies. PMID:27526645

  17. Synthesis and characterization of UV-treated Fe-doped bismuth lanthanum titanate-doped TiO2 layers in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Song, Myoung Geun; Bark, Chung Wung

    2016-06-01

    Dye-sensitized solar cells (DSSCs) based on titanium dioxide (TiO2) have been extensively studied because they constitute promising low-cost alternatives to their conventional semiconductor-based counterparts. However, much of the effort aimed at achieving high conversion efficiencies has focused on dye and liquid electrolytes. In this work, we report the photovoltaic characteristics of DSSCs fabricated by mixing TiO2 with Fe-doped bismuth lanthanum titanate (Fe-BLT). These nanosized Fe-BLT powders were prepared by using a high-energy ball-milling process. In addition, we used a UV radiation-ozone (UV-O3) treatment to change the surface wettability of TiO2 from hydrophobic to hydrophilic and thereby prevented the easy separation of the Fe-BLT-mixed TiO2 from the fluorine-doped tin-oxide (FTO) coating glass.

  18. Doping dependence of the coupling of electrons to bosonic modes in the single-layer high-temperature Bi2Sr2CuO6 superconductor

    SciTech Connect

    Meevasana, W.

    2010-06-02

    A recent highlight in the study of high-Tc superconductors is the observation of band renormalization or self-energy effects on the quasiparticles. This is seen in the form of kinks in the quasiparticle dispersions as measured by photoemission and interpreted as signatures of collective bosonic modes coupling to the electrons. Here we compare for the first time the self-energies in an optimally doped and strongly overdoped, nonsuperconducting single-layer Bi-cuprate (Bi{sub 2}Sr{sub 2}CuO{sub 6}). In addition to the appearance of a strong overall weakening, we also find that the weight of the self-energy in the overdoped system shifts to higher energies. We present evidence that this is related to a change in the coupling to c-axis phonons due to the rapid change of the c-axis screening in this doping range.

  19. Intermediate-Temperature Solid-Oxide Fuel Cells with a Gadolinium-Doped Ceria Anodic Functional Layer Deposited via Radio-Frequency Sputtering.

    PubMed

    Tanveer, Waqas Hassan; Ji, Sanghoon; Yu, Wonjong; Cho, Gu Young; Lee, Yoon Ho; Cha, Suk Won

    2015-11-01

    We investigated the effects of the insertion of a gadolinium-doped ceria (GDC) anodic functional layer (AFL) on the electrochemical performance of intermediate-temperature solid-oxide fuel cells (SOFCs). Fully stabilized yttria-stabilized zirconia (YSZ) was used as an oxygen-ion-conducting and support material. Nickel-Samaria-doped ceriathin film was used as an anode material, while screen-printed lanthanum strontium magnetite served as a cathode material. In order to enhance the interfacial reaction on the anode side, a GDC-AFL with a thickness of about 140 nm, deposited via radio-frequency sputtering, was inserted into the anode-electrolyte interface. SOFCs with and without a GDC-AFL were electrochemically characterized. In an intermediate temperature range of about 700 - 800 degrees C, the application of the GDC-AFL led to an increase in the peak power density of approximately 16%.

  20. Final report on LDRD Project: The double electron layer tunneling transistor (DELTT)

    SciTech Connect

    Simmons, J.A.; Moon, J.S.; Blount, M.A.

    1998-06-01

    This report describes the research accomplishments achieved under the LDRD Project ``Double Electron Layer Tunneling Transistor.`` The main goal of this project was to investigate whether the recently discovered phenomenon of 2D-2D tunneling in GaAs/AlGaAs double quantum wells (DQWs), investigated in a previous LDRD, could be harnessed and implemented as the operating principle for a new type of tunneling device the authors proposed, the double electron layer tunneling transistor (DELTT). In parallel with this main thrust of the project, they also continued a modest basic research effort on DQW physics issues, with significant theoretical support. The project was a considerable success, with the main goal of demonstrating a working prototype of the DELTT having been achieved. Additional DELTT advances included demonstrating good electrical characteristics at 77 K, demonstrating both NMOS and CMOS-like bi-stable memories at 77 K using the DELTT, demonstrating digital logic gates at 77 K, and demonstrating voltage-controlled oscillators at 77 K. In order to successfully fabricate the DELTT, the authors had to develop a novel flip-chip processing scheme, the epoxy-bond-and-stop-etch (EBASE) technique. This technique was latter improved so as to be amenable to electron-beam lithography, allowing the fabrication of DELTTs with sub-micron features, which are expected to be extremely high speed. In the basic physics area they also made several advances, including a measurement of the effective mass of electrons in the hour-glass orbit of a DQW subject to in-plane magnetic fields, and both measurements and theoretical calculations of the full Landau level spectra of DQWs in both perpendicular and in-plane magnetic fields. This last result included the unambiguous demonstration of magnetic breakdown of the Fermi surface. Finally, they also investigated the concept of a far-infrared photodetector based on photon assisted tunneling in a DQW. Absorption calculations showed a

  1. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN{sub x} films by introducing phosphorous catalytic-doped layer

    SciTech Connect

    Thi, Trinh Cham Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2014-07-28

    We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

  2. Fabrication of {beta}-BaB{sub 2}O{sub 4} layers on (0 0 1) Sr{sup 2+}-doped {alpha}-BaB{sub 2}O{sub 4} by vapor transport equilibration (VTE)

    SciTech Connect

    Liu Junfang . E-mail: hjliujunfang@yahoo.com.cn; Xu Jun; Yao Wu

    2007-06-05

    Crystalline {beta}-BBO layers have been successfully prepared on (0 0 1)-oriented Sr{sup 2+}-doped {alpha}-BBO substrates using vapor transport equilibration technique. The layers were characterized by X-ray diffraction, X-ray rocking curve and transmission spectra. The present results manifest that the VTE treatment time and powder ratio are important factors on the preparation of {beta}-BBO layers. {beta}-BBO layers with a highly (0 0 l) preferred orientation were obtained according to XRD profiles. The full width at half-maximum of the rocking curve for the layer is as low as about 1000 in., which shows the high crystallinity of the layer. These results reveal the possibility of fabricating {beta}-BBO (0 0 1) layers on (0 0 1)-oriented Sr{sup 2+}-doped {alpha}-BBO substrates by VTE.

  3. The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy

    NASA Astrophysics Data System (ADS)

    Lee, Sunhwa; Park, Seungman; Park, Jinjoo; Kim, Youngkuk; Yoon, Kichan; Shin, Chonghoon; Baek, Seungsin; Kim, Joondong; Lee, Youn-Jung; Yi, Junsin

    2011-09-01

    In amorphous silicon solar cells, reducing degradation is one of the key issues in improving cell performance. The degradation of the p-layer can play an important role since it is directly related to the open circuit voltage (Voc) and fill factor (FF) in the cells. In this study, we investigated the changes in boron-doped p-type silicon suboxide (SiOx) layers after carrier injection stress. The boron doping level was varied by controlling B2H6 gas flow rate. When these layers were degraded, the dark conductivity decay decreased from 53% to less than 5%, and the increase in activation energy decreased from 11 to 0.5% depending on the B2H6 gas flow rate increase. Our improvements are explained in conjunction with the three- and four-fold coordinated boron atoms by the shift of the B 1s X-ray photoelectron spectrum. In this paper we present how to improve the stability of hydrogenated amorphous silicon (a-Si:H) thin-film solar cells.

  4. The effect of doping (Mn,B)3O4 materials as protective layers in different metallic interconnects for Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Miguel-Pérez, Verónica; Martínez-Amesti, Ana; Nó, María Luisa; Larrañaga, Aitor; Arriortua, María Isabel

    2013-12-01

    Spinel oxides with the general formula of (Mn,B)3O4 (B = Co, Fe) were used as barrier materials between the cathode and the metallic interconnect to reduce the rate of cathode degradation by Cr poisoning. The effect of doping at the B position was investigated terms of microstructure and electrical conductivity to determine its behaviour and effectiveness as a protective layer in contact with three metallic materials (Crofer 22 APU, SS430 and Conicro 4023 W 188). The analysis showed that the use of these materials considerably decreased the reactivity and diffusion of Cr between the cathode and the metallic interconnects. The protective layer doped with Fe at the B position exhibited the least amount of reactivity with the interconnector and cathode materials. The worst results were observed for SS430 cells coated with a protective layer perhaps due to their low Cr content. The Crofer 22 APU and Conicro 4023 W 188 samples exhibited very similar conductivity results in the presence of the MnCo1.9Fe0.1O4 protective coating. As a result, these two material combinations are a promising option for use as bipolar plates in SOFC.

  5. Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

    SciTech Connect

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge; Zhao, Yongbiao; Zhang, Hongmei

    2014-06-28

    By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thin non-doped orange emission layer in WOLEDs.

  6. New Approach for High-Voltage Electrical Double-Layer Capacitors Using Vertical Graphene Nanowalls with and without Nitrogen Doping.

    PubMed

    Chi, Yu-Wen; Hu, Chi-Chang; Shen, Hsiao-Hsuan; Huang, Kun-Ping

    2016-09-14

    Integrating various devices to achieve high-performance energy storage systems to satisfy various demands in modern societies become more and more important. Electrical double-layer capacitors (EDLCs), one kind of the electrochemical capacitors, generally provide the merits of high charge-discharge rates, extremely long cycle life, and high efficiency in electricity capture/storage, leading to a desirable device of electricity management from portable electronics to hybrid vehicles or even smart grid application. However, the low cell voltage (2.5-2.7 V in organic liquid electrolytes) of EDLCs lacks the direct combination of Li-ion batteries (LIBs) and EDLCs for creating new functions in future applications without considering the issue of a relatively low energy density. Here we propose a guideline, "choosing a matching pair of electrode materials and electrolytes", to effectively extend the cell voltage of EDLCs according to three general strategies. Based on the new strategy proposed in this work, materials with an inert surface enable to tolerate a wider potential window in commercially available organic electrolytes in comparison with activated carbons (ACs). The binder-free, vertically grown graphene nanowalls (GNW) and nitrogen-doped GNW (NGNW) electrodes respectively provide good examples for extending the upper potential limit of a positive electrode of EDLCs from 0.1 to 1.5 V (vs Ag/AgNO3) as well as the lower potential limit of a negative electrode of EDLCs from -2.0 V to ca. -2.5 V in 1 M TEABF4/PC (propylene carbonate) compared to ACs. This newly designed asymmetric EDLC exhibits a cell voltage of 4 V, specific energy of 52 Wh kg(-1) (ca. a device energy density of 13 Wh kg(-1)), and specific power of 8 kW kg(-1) and ca. 100% retention after 10,000 cycles charge-discharge, reducing the series number of EDLCs to enlarge the module voltage and opening the possibility for directly combining EDLCs and LIBs in advanced applications. PMID:27548051

  7. New Approach for High-Voltage Electrical Double-Layer Capacitors Using Vertical Graphene Nanowalls with and without Nitrogen Doping.

    PubMed

    Chi, Yu-Wen; Hu, Chi-Chang; Shen, Hsiao-Hsuan; Huang, Kun-Ping

    2016-09-14

    Integrating various devices to achieve high-performance energy storage systems to satisfy various demands in modern societies become more and more important. Electrical double-layer capacitors (EDLCs), one kind of the electrochemical capacitors, generally provide the merits of high charge-discharge rates, extremely long cycle life, and high efficiency in electricity capture/storage, leading to a desirable device of electricity management from portable electronics to hybrid vehicles or even smart grid application. However, the low cell voltage (2.5-2.7 V in organic liquid electrolytes) of EDLCs lacks the direct combination of Li-ion batteries (LIBs) and EDLCs for creating new functions in future applications without considering the issue of a relatively low energy density. Here we propose a guideline, "choosing a matching pair of electrode materials and electrolytes", to effectively extend the cell voltage of EDLCs according to three general strategies. Based on the new strategy proposed in this work, materials with an inert surface enable to tolerate a wider potential window in commercially available organic electrolytes in comparison with activated carbons (ACs). The binder-free, vertically grown graphene nanowalls (GNW) and nitrogen-doped GNW (NGNW) electrodes respectively provide good examples for extending the upper potential limit of a positive electrode of EDLCs from 0.1 to 1.5 V (vs Ag/AgNO3) as well as the lower potential limit of a negative electrode of EDLCs from -2.0 V to ca. -2.5 V in 1 M TEABF4/PC (propylene carbonate) compared to ACs. This newly designed asymmetric EDLC exhibits a cell voltage of 4 V, specific energy of 52 Wh kg(-1) (ca. a device energy density of 13 Wh kg(-1)), and specific power of 8 kW kg(-1) and ca. 100% retention after 10,000 cycles charge-discharge, reducing the series number of EDLCs to enlarge the module voltage and opening the possibility for directly combining EDLCs and LIBs in advanced applications.

  8. Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Wang, Yi; Luan, Huakai; Dai, Qian; Wu, Zili; Zhao, Jianguo; Cui, Yiping

    2016-08-01

    The polar (0001)-oriented c-plane and non-polar (11 2 bar 0) -oriented a-plane wurtzite AlGaN epi-layers were successfully grown on polar (0001)-oriented c-plane and semi-polar (1 1 bar 02) -oriented r-plane sapphire substrates, respectively with various Si-doping levels in a low pressure metal organic chemical vapor deposition (MOCVD) system. The morphological, structural, electrical, and optical properties of the polar and non-polar AlGaN epi-layers were studied with scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall effect, and Raman spectroscopy. The characterization results show that Si dopants incorporated into the polar and non-polar AlGaN films induced a relaxation of compressive residual strain and a generation of biaxial tensile strain on the surface in consequence of the dislocation climbing. In particular, it was found that the Si-induced compressive strain relaxation in the non-polar AlGaN samples can be promoted by the structural anisotropy as compared with the polar counterparts. The gradually increased relaxation of compressive residual strain in both polar and non-polar AlGaN samples with increasing Si-doping level was attributed to the Si-induced enhancement in the opportunity for the dislocations to interact and annihilate. This implies that the crystal quality for both polar and non-polar AlGaN epi-layers can be remarkably improved by Si-doping.

  9. Final Report for Award DE-SC0005403. Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping

    SciTech Connect

    Hertz, Joshua L.; Prasad, Ajay K.

    2015-09-06

    The enclosed document provides a final report to document the research performed at the University of Delaware under Grant DE-SC0005403: Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping. The ultimate goal of this project was to learn how to systematically strain the inter-atomic distance in thin ceramic films and how to use this newfound control to improve the ease by which oxygen ions can conduct through the films. Increasing the ionic conductivity of ceramics holds the promise of drastic improvements in the performance of solid oxide fuel cells, chemical sensors, gas permeation membranes, and related devices. Before this work, the experimental evidence advocating for strain-based techniques was often controversial and poorly characterized. Enabling much of this work was a new method to quickly create a very wide range of ceramic nanostructures that was established during the first phase of the project. Following this initial phase, we created a variety of promising nanostructured epitaxial films and multilayers with systematic variations in lattice mismatch and dopant content. Over the course of the work, a positive effect of tensile atomic strain on the oxygen conductivity was conclusively found using a few different forms of samples and experimental techniques. The samples were built by sputtering, an industrially scalable technique, and thus the technological implementation of these results may be economically feasible. Still, two other results consistently achieved over multiple efforts in this work give pause. The first of these results was that very specific, pristine surfaces upon which to build the nanostructures were strictly required in order to achieve measurable results. The second of these results was that compressively strained films with concomitant reductions in oxygen conductivity are much easier to obtain relative to tensile-strained films with increased conductivity.

  10. Doping La into the depletion layer of the Cd(0.6)Zn(0.4)S photocatalyst for efficient H(2) evolution.

    PubMed

    Yu, Yao-Guang; Chen, Gang; Hao, Lin-Xing; Zhou, Yan-Song; Wang, Yu; Pei, Jian; Sun, Jing-Xue; Han, Zhong-Hui

    2013-10-01

    We report a novel strategy for the enhancement of photocatalytic H2 evolution by doping La into the depletion layer of Cd0.6Zn0.4S (CZS: x% La). The apparent quantum yield of the CZS: 2% La photocatalyst at 350 nm is up to 93.3%, which is extremely high for solar water splitting even compared with the noble metal cocatalyst systems. This work may contribute to the design and construction of materials with outstanding capability for charge separation and hence improve the properties of the materials for various applications.

  11. Influence of hole injection layer and work function of cathode on the performance of light-emitting liquid crystal cells with fluorescent dye-doped nematic liquid crystal

    NASA Astrophysics Data System (ADS)

    Honma, Michinori; Horiuchi, Takao; Watanabe, Kyoko; Nose, Toshiaki

    2014-11-01

    We investigated the properties of rubrene-doped nematic-liquid-crystal cells to help determine the appropriate structure and material of electrodes for inducing light emission. In particular, we addressed the influence of the insertion of a hole injection layer (HIL) and the work function of the cathode on device performance. As a result, the employment of a HIL and a lower-work-function material was revealed to be effective in obtaining higher luminance and external quantum efficiency. We concluded that this improvement is caused by the facilitated carrier injection on the HIL and cathode surface, as is true for common organic light-emitting diodes.

  12. Control of p-type conduction in Mg doped monophase CuCrO2 thin layers

    NASA Astrophysics Data System (ADS)

    Chikoidze, E.; Boshta, M.; Gomaa, M.; Tchelidze, T.; Daraselia, D.; Japaridze, D.; Shengelaya, A.; Dumont, Y.; Neumann-Spallart, M.

    2016-05-01

    This work aims to clarify the origin of hole conduction in undoped and Mg-doped CuCrO2 oxide in order to have the possibility of controlling it by corresponding growth parameters. A chemical spray pyrolysis procedure for the deposition of p-type semiconductor thin films is described. The as-deposited films were amorphous. The formation of highly crystalline CuCrO2 and Mg-doped CuCrO2 films with a single phase delafossite structure was realized by annealing between 600 °C and 960 °C in a nitrogen atmosphere. The carrier concentration and the point defects of the samples are calculated by using the developed Kroger method of quasi-chemical reactions. p-type conductivity was predicted and observed in the undoped and Mg doped CuCrO2 sample, and with n ~ 1018 cm‑3 carrier concentrations for 4%Mg doping. The electrical resistivity for a 4% Mg doped sample was 1.4 Ω·cm with a Seebeck coefficient of  +130 μV K‑1 at 40 °C. By electroparamagnetic resonance spectroscopy Cr3+ and Cu2+ related defects were studied.

  13. Control of p-type conduction in Mg doped monophase CuCrO2 thin layers

    NASA Astrophysics Data System (ADS)

    Chikoidze, E.; Boshta, M.; Gomaa, M.; Tchelidze, T.; Daraselia, D.; Japaridze, D.; Shengelaya, A.; Dumont, Y.; Neumann-Spallart, M.

    2016-05-01

    This work aims to clarify the origin of hole conduction in undoped and Mg-doped CuCrO2 oxide in order to have the possibility of controlling it by corresponding growth parameters. A chemical spray pyrolysis procedure for the deposition of p-type semiconductor thin films is described. The as-deposited films were amorphous. The formation of highly crystalline CuCrO2 and Mg-doped CuCrO2 films with a single phase delafossite structure was realized by annealing between 600 °C and 960 °C in a nitrogen atmosphere. The carrier concentration and the point defects of the samples are calculated by using the developed Kroger method of quasi-chemical reactions. p-type conductivity was predicted and observed in the undoped and Mg doped CuCrO2 sample, and with n ~ 1018 cm-3 carrier concentrations for 4%Mg doping. The electrical resistivity for a 4% Mg doped sample was 1.4 Ω·cm with a Seebeck coefficient of  +130 μV K-1 at 40 °C. By electroparamagnetic resonance spectroscopy Cr3+ and Cu2+ related defects were studied.

  14. Layered Lithium-Rich Oxide Nanoparticles Doped with Spinel Phase: Acidic Sucrose-Assistant Synthesis and Excellent Performance as Cathode of Lithium Ion Battery.

    PubMed

    Chen, Min; Chen, Dongrui; Liao, Youhao; Zhong, Xiaoxin; Li, Weishan; Zhang, Yuegang

    2016-02-01

    Nanolayered lithium-rich oxide doped with spinel phase is synthesized by acidic sucrose-assistant sol-gel combustion and evaluated as the cathode of a high-energy-density lithium ion battery. Physical characterizations indicate that the as-synthesized oxide (LR-SN) is composed of uniform and separated nanoparticles of about 200 nm, which are doped with about 7% spinel phase, compared to the large aggregated ones of the product (LR) synthesized under the same condition but without any assistance. Charge/discharge demonstrates that LR-SN exhibits excellent rate capability and cyclic stability: delivering an average discharge capacity of 246 mAh g(-1) at 0.2 C (1C = 250 mA g(-1)) and earning a capacity retention of 92% after 100 cycles at 4 C in the lithium anode-based half cell, compared to the 227 mA g(-1) and the 63% of LR, respectively. Even in the graphite anode-based full cell, LR-SN still delivers a capacity of as high as 253 mAh g(-1) at 0.1 C, corresponding to a specific energy density of 801 Wh kg(-1), which are the best among those that have been reported in the literature. The separated nanoparticles of the LR-SN provide large sites for charge transfer, while the spinel phase doped in the nanoparticles facilitates lithium ion diffusion and maintains the stability of the layered structure during cycling.

  15. Synthesis and visible light photocatalysis of Fe-doped TiO{sub 2} mesoporous layers deposited on hollow glass microbeads

    SciTech Connect

    Cui Lifeng; Wang Yuansheng; Niu Mutong; Chen Guoxin; Cheng Yao

    2009-10-15

    Nano-composite of Fe-doped anatase TiO{sub 2} nanocrystals loaded on the hollow glass microbeads was prepared by co-thermal hydrolysis deposition and calcining treatment. The adherence of TiO{sub 2} mesoporous layers to the surfaces of hollow glass microbeads prevented the aggregation of TiO{sub 2} nanoparticles and benefited to their catalytic activity. The doping of Fe ions makes the absorption edge of the TiO{sub 2} based nano-composite red-shifted into the visible region. An effective photodegradation of the methyl orange aqueous solution was achieved under visible light (lambda>420 nm) irradiation, revealing the potential applicability of such nano-composite in some industry fields, such as air and water purifications. - Graphical abstract: Nano-composite of Fe-doped anatase TiO{sub 2} nanocrystals loaded on the hollow glass microbeads was prepared by co-thermal hydrolysis deposition. Photodegradation of the methyl orange was achieved under visible light irradiation, revealing the potential applicability of such nano-composite in some industry fields.

  16. Yb,Er-doped CeO2 nanotubes as an assistant layer for photoconversion-enhanced dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhao, Rongfang; Huan, Long; Gu, Peng; Guo, Rong; Chen, Ming; Diao, Guowang

    2016-11-01

    Yb,Er-doped CeO2 nanotubes were successfully synthesized using Ag nanowires as a hard template via a facile hydrothermal reaction and subsequent calcination and leaching processes. Yb,Er-doped CeO2 nanotubes as a promising assistant layer were investigated to determine theirs photovoltaic properties in an effort to enhance the power conversion efficiency of dye-sensitized solar cells (DSSCs). The influence factors of photoelectric properties of CeO2:Yb,Er NTs, including diameter of nanotubes, hydrothermal time, calcination temperature, and elements doping, have been studied. Compared with pristine P25 photoanode, the DSSCs fabricated by CeO2:Yb,Er nanotubes and P25 exhibited a power conversion efficiency (η) of 8.67%, an increase of 34%, and incident photo-to-electric conversion efficiency (IPCE) of 92.96%, an increase of 48.83%, which evidence that CeO2:Yb,Er NTs are a promising assistant photoanode material for DSSCs. The enhance mechanism of CeO2:Yb,Er nanotubes has been further revealed according to experimental results.

  17. A Scanning electron microscopic evaluation of intracanal smear layer removal by two different final irrigation activation systems

    PubMed Central

    Dua, Deepti; Dua, Ankur; Uppin, Veerendra M.

    2014-01-01

    Aim: The aim of this study was to compare smear layer removal at apical 1 mm level after final irrigation activation with an EndoVac system and Max-I probe. Materials and Methods: Fifty freshly extracted maxillary central incisors were randomly divided into two groups after completing cleaning and shaping with ProTaper rotary files. In one group, final irrigation was performed with an EndoVac system while in the other group final irrigation was performed with a 30 gauge Max-I probe. 3% sodium hypochlorite and 17% ethylenediaminetetracetic acid were used as final irrigants in all teeth. After instrumentation and irrigation, the teeth were sectioned longitudinally into buccal and palatal halves and viewed under a scanning electron microscope for evaluation of the smear layer. Statistical analysis was performed using the Kruskal Wallis and Mann-Whitney U tests. Results: The EndoVac group showed significantly better smear layer removal compared with the Max-I probe at the apical 1 mm level. Conclusion: An apical negative pressure system (EndoVac) results in better debridement at apical 1 mm when compared with side-vented closed ended needle irrigation (Max-I probe). PMID:24808693

  18. The effects of ultraviolet-ozone-treated ultra-thin MnO-doped ZnO film as anode buffer layer on the electrical characteristics of organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lu, Hsin-Wei; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

    2015-11-01

    In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing an MnO-doped ZnO film as a buffer layer between the indium tin oxide (ITO) electrode and the α-naphthylphenylbiphenyldiamine hole transport layer. The enhancement mechanism was systematically investigated, and the X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone-treated MnO-doped ZnO film. With this film, the work function increased from 4.8 eV (standard ITO electrode (˜ 10 ±5 Ω/◻ )) to 5.27 eV (UV-ozone-treated MnO-doped ZnO deposited on the ITO electrode with 1 wt. % for 1 nm), while the surface roughness of the UV-ozone-treated MnO-doped ZnO film was smoother than that of the ITO electrode. The deposited UV-ozone-treated MnO-doped ZnO film increased the surface energy and polarity of the ITO surface, as determined from contact angle measurements. Further, results from admittance spectroscopy showed that the inserted UV-ozone-treated MnO-doped ZnO film increased the capacitance and conductance of the OLEDs. It was also found that the carrier injection increased in the space-charge region when the UV-ozone-treated MnO-doped ZnO buffer layer was inserted. Moreover, the turn-on voltage of the devices decreased from 3.8 V to 3.2 V, the luminance increased from 7588 cd/m2 to 20 350 cd/m2, and the current efficiency increased from 3.2 cd/A to 5.8 cd/A when a 1 nm-thick UV-ozone-treated MnO-doped ZnO film with 1 wt. % was inserted as a buffer layer in the OLEDs.

  19. Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

    NASA Astrophysics Data System (ADS)

    Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo

    2016-03-01

    In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of -0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ṡ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.

  20. Breakthrough of the p-type doping bottleneck in ZnO by inserting an ultrathin ZnX (X  =  S, Se and Te) layer doped with NX or AgZn

    NASA Astrophysics Data System (ADS)

    Jiang, Xin-he; Shi, Jun-jie; Zhang, Min; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Cao, Xiong; Wu, Meng; Liao, Zhi-min

    2016-03-01

    The worldwide problem of p-type doping in ZnO is investigated based on first-principles calculations by combining the standard density functional theory and hybrid functional methods. We find that p-type doping can be realized by inserting an ultrathin ZnX (X  =  S, Se and Te) layer, doped with NX or AgZn, into ZnO to form short-period (ZnO) m /(ZnX) n (m  >  n) superlattices. The formation energy is the lowest for NX or AgZn in the ZnX layer. The Zn-rich (Zn-poor) condition is favourable for the formation of the NX (AgZn) defect. Compensation by the native defects can be avoided for the Ag-doped (ZnO) m /(ZnX) n under the Zn-poor condition. The N (Ag) acceptor activation energy can be reduced from 0.45 (0.43) eV in ZnO to 0.33 (0.32) eV in (ZnO)5/(ZnS)1, 0.20 (0.24) eV in (ZnO)5/(ZnSe)1 and 0.12 (0.13) eV in (ZnO)5/(ZnTe)1, which is caused by the ZnX-monolayer modulation to the local structure around the NX or AgZn defect and the high-lying p-derived valence bands. Moreover, the band gaps can be tuned from 3.40 eV of ZnO to 3.21 eV of (ZnO)5/(ZnS)1, 2.41 eV of (ZnO)5/(ZnSe)1 and 2.26 eV of (ZnO)5/(ZnTe)1, which is promising for the integration of ZnO-based white light-emitting diodes.

  1. Microwave-Assisted Synthesis of Highly-Crumpled, Few-Layered Graphene and Nitrogen-Doped Graphene for Use as High-Performance Electrodes in Capacitive Deionization

    PubMed Central

    Amiri, Ahmad; Ahmadi, Goodarz; Shanbedi, Mehdi; Savari, Maryam; Kazi, S. N.; Chew, B. T.

    2015-01-01

    Capacitive deionization (CDI) is a promising procedure for removing various charged ionic species from brackish water. The performance of graphene-based material in capacitive deionization is lower than the expectation of the industry, so highly-crumpled, few-layered graphene (HCG) and highly-crumpled nitrogen-doped graphene (HCNDG) with high surface area have been introduced as promising candidates for CDI electrodes. Thus, HCG and HCNDG were prepared by exfoliation of graphite in the presence of liquid-phase, microwave-assisted methods. An industrially-scalable, cost-effective, and simple approach was employed to synthesize HCG and HCNDG, resulting in few-layered graphene and nitrogen-doped graphene with large specific surface area. Then, HCG and HCNDG were utilized for manufacturing a new class of carbon nanostructure-based electrodes for use in large-scale CDI equipment. The electrosorption results indicated that both the HCG and HCNDG have fairly large specific surface areas, indicating their huge potential for capacitive deionization applications. PMID:26643279

  2. Improving biogas separation and methane storage with multilayer graphene nanostructure via layer spacing optimization and lithium doping: a molecular simulation investigation.

    PubMed

    Chen, Jie-Jie; Li, Wen-Wei; Li, Xue-Liang; Yu, Han-Qing

    2012-09-18

    Methane is a desirable alternative to conventional fossil fuels, and also a main component of biogas from anaerobic fermentation of organic wastes. However, its relatively lower purity and poor storage by existing adsorbent materials negatively affect its wide application. Thus, efficient, cost-effective, and safe adsorbent materials for methane purification and storage are highly desired. In this study, multilayer graphene nanostructures (MGNs) with optimized structure are investigated as a potential adsorbent for this purpose. The effects of layer distance and Li doping on MGN performance in terms of methane storage and acid gas (H(2)S and CO(2)) separation from biogas are examined by molecular simulations. The mechanisms for the interactions between gas molecules and substrates are elucidated by analyzing the binding energy, geometric structures, and charge distribution from the first-principles calculations. The results show that nonhydrocarbons in biogas can be effectively separated using Li-doped MGNs with the optimal layer distance of 0.68 nm, and then the pure methane gas can be stored in MGNs with capacity satisfying the DOE target. This work offers a molecular-level insight into the interactions between gas molecules and MGNs and might provide useful information for development of new materials for methane purification and storage.

  3. Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus.

    PubMed

    Baik, Seung Su; Kim, Keun Su; Yi, Yeonjin; Choi, Hyoung Joon

    2015-12-01

    Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications.

  4. Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

    NASA Astrophysics Data System (ADS)

    Baik, Seung Su; Kim, Keun Su; Yi, Yeonjin; Choi, Hyoung Joon

    2015-12-01

    Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications.

  5. Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Nam, Taewook; Lee, Chang Wan; Kim, Hyun Jae; Kim, Hyungjun

    2014-03-01

    The growth characteristics and electrical and optical properties of gallium-doped ZnO (GZO) grown by thermal atomic layer deposition (Th-ALD) and plasma-enhanced atomic layer deposition (PE-ALD) were investigated as a function of key growth parameters including the growth temperature. While GZO films are generally deposited at high growth temperatures above 300 °C, room temperature deposition is possible using PE-ALD. The chemical properties of the films were analyzed by X-ray photoelectron spectroscopy and their electrical properties including the carrier concentration, mobility, and resistivity were investigated by Hall measurements. The lowest resistivity of 1.49 × 10-3 Ω cm was obtained for the Th-ALD GZO film grown at 300 °C. The transmittance was enhanced to over 85% in the visible light range when Ga was doped on a ZnO film. In addition, a GZO bottom-gated thin film transistor (TFT) was fabricated and exhibited good electrical properties.

  6. Rapid Melt and Resolidification of Surface Layers Using Intense, Pulsed Ion Beams Final Report

    SciTech Connect

    Renk, Timothy J. Turman, Bob Senft, Donna Sorensen, Neil R. Stinnett, Regan Greenly, John B. Thompson, Michael O. Buchheit, Rudolph G.

    1998-10-02

    The emerging technology of pulsed intense ion beams has been shown to lead to improvements in surface characteristics such as hardness and wear resistance, as well as mechanical smoothing. We report hereon the use of this technology to systematically study improvements to three types of metal alloys - aluminum, iron, and titanium. Ion beam tieatment produces a rapid melt and resolidification (RMR) of the surface layer. In the case of a predeposited thin-fihn layer, the beam mixes this layer into the substrate, Ieading to improvements that can exceed those produced by treatment of the alloy alone, In either case, RMR results in both crystal refinement and metastable state formation in the treated surface layer not accessible by conventional alloy production. Although more characterization is needed, we have begun the process of relating these microstructural changes to the surface improvements we discuss in this report.

  7. Structure and modeling of the three dimensional boundary layer on a rotating disk. Final report

    SciTech Connect

    Eaton, J.K.

    1996-12-01

    Almost all practical turbulent flows include three dimensional boundary layers (3DTBL`s), and in many cases, the 3DTBL is the dominant feature of the flow. A boundary layer is defined as a thin layer adjacent to the surface in which the velocity drops rapidly from the freestream value to zero at the wall. A 3D boundary layer is one in which the flow direction also changes rapidly approaching the wall. This change in the flow direction called skewing is caused by transverse pressure gradients, centrifugal forces, or motion of the surface. Most research on turbulent boundary layers has been done in simple two dimensional flows in carefully controlled wind tunnels. Such boundary layers are now well understood, and excellent models are available describing both the fluid mechanics and heat transfer behavior. Recent fluid mechanics studies have shown that skewing can have a pronounced effect on the boundary layer turbulence. Models based on eddy-viscosity concepts fail, and more complex stress transport models cannot capture the reduction of turbulent mixing that usually accompanies skewing. It was unknown prior to the present study what effect the skewing might have on turbulent heat transfer. It was suspected that turbulent heat transport would be reduced in analogy to the reductions of turbulent shear stress. It was also unknown how the skewing would effect the turbulent Prandtl number, a quantity which is embedded in most turbulent heat transfer prediction schemes. The objectives of the present study were then to study the surface heat transfer rate and the turbulent heat flux in a simple three dimensional boundary layer. In particular, the research addressed the heat transfer from a heated disk rotating in an otherwise quiescent environment.

  8. Slurry spin coating of thin film yttria stabilized zirconia/gadolinia doped ceria bi-layer electrolytes for solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Kim, Hyun Joong; Kim, Manjin; Neoh, Ke Chean; Han, Gwon Deok; Bae, Kiho; Shin, Jong Mok; Kim, Gyu-Tae; Shim, Joon Hyung

    2016-09-01

    Thin ceramic bi-layered membrane comprising yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is fabricated by the cost-effective slurry spin coating technique, and it is evaluated as an electrolyte of solid oxide fuel cells (SOFCs). It is demonstrated that the slurry spin coating method is capable of fabricating porous ceramic films by adjusting the content of ethyl-cellulose binders in the source slurry. The porous GDC layer deposited by spin coating under an optimal condition functions satisfactorily as a cathode-electrolyte interlayer in the test SOFC stack. A 2-μm-thick electrolyte membrane of the spin-coated YSZ/GDC bi-layer is successfully deposited as a dense and stable film directly on a porous NiO-YSZ anode support without any interlayers, and the SOFC produces power output over 200 mW cm-2 at 600 °C, with an open circuit voltage close to 1 V. Electrochemical impedance spectra analysis is conducted to evaluate the performance of the fuel cell components in relation with the microstructure of the spin-coated layers.

  9. An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

    2016-06-01

    NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01601d

  10. Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

    SciTech Connect

    Shim, Seong Hoon; Kim, Hyung-jun; Koo, Hyun Cheol; Lee, Yun-Hi; Chang, Joonyeon

    2015-09-07

    We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

  11. LETTER TO THE EDITOR: Optimization of the δ-doped layer in P-HFETs at medium/high temperatures

    NASA Astrophysics Data System (ADS)

    González, B.; Hernández, A.; García, J.; del Pino, J.; Sendra, J. R.; Nunez, A.

    2000-04-01

    The use of icons/Journals/Common/delta" ALT="delta" ALIGN="TOP"/> -doping in HFET processes has made the development of transistor circuits and logic gates possible, for very high-frequency/speed or low-power applications. This behaviour of the PHFET device is due to fast quantum well conduction. However, the effect of the operating temperature range is critical. This range depends on the transistor and circuit activity, the packaging technique, and the external operating conditions. Temperature strongly affects the device ability to confine the current flow into the quantum well channel. In this paper the effect of temperature and icons/Journals/Common/delta" ALT="delta" ALIGN="TOP"/> -doping concentration on the performance of the device is investigated by means of simulated experiments. The results are analytically and qualitatively discussed, showing how to fine tune the icons/Journals/Common/delta" ALT="delta" ALIGN="TOP"/> -doping concentration in order to optimize the P-HFET behaviour from medium- to high-temperature conditions, [300, 500] K.

  12. Radiographic layer counter for composites. Final technical report, Jun 87-Feb 88

    SciTech Connect

    Larsen, R.E.

    1991-06-01

    The Army helmet is a composite of layers of resin-bonded Kevlar. Inadvertent omission of layers or undetected shifting of layers during molding processes can reduce the effective number of fibers in some helmet areas and impair their strength properties. A nondestructive method of 100% testing of the helmets, more effective than random sampling by ballistic testing, is needed. This six-month study evaluated the feasibility of using relatively low-energy radioisotopes to gauge the uniformity of Kelvar helmets. The potential for constructing a portable detection unit was also assessed. A laboratory radiometric test system was used to evaluate resin-bonded Kevlar samples, as well as actual Army helmets from current suppliers. It was found that the radiometric test system has the capacity to reflect the general condition of fabricated Kevlar helmets.

  13. Enhanced photocatalytic activity of Ce-doped Zn-Al multi-metal oxide composites derived from layered double hydroxide precursors.

    PubMed

    Zhu, Jianyao; Zhu, Zhiliang; Zhang, Hua; Lu, Hongtao; Qiu, Yanling; Zhu, Linyan; Küppers, Stephan

    2016-11-01

    In this work, a series of novel Zn-Al-Ce multi-metal oxide (Zn-Al-Ce-MMO) photocatalysts with different Ce doping contents were prepared by calcination of Ce-doped Zn-Al layered double hydroxide (Zn-Al-Ce-LDH) precursors at various temperatures in air atmosphere. The synthesized Zn-Al-Ce-MMO materials were characterized by XRD, FTIR, TGA, BET, SEM, TEM, XPS and UV-vis DRS. The photocatalytic activities of the Zn-Al-Ce-MMO materials were evaluated by the photodegradation of rhodamine B (RhB) dye and paracetamol in aqueous solution under simulated solar light irradiation. The result of photodegradation of RhB showed that the Zn-Al-Ce-MMO samples exhibit much higher photocatalytic activity than that of Zn-Al-MMO, and the optimal Ce doping content is 5% of mole ratio (nCe/n(Zn+Al+Ce)). The enhanced photocatalytic activity of the Zn-Al-Ce-MMO was mainly attributed to the increasing in the separation efficiency of electrons and holes. The effect of calcination temperature was also studied. The photocatalytic activity of Zn-Al-Ce-MMO increased with increasing calcination temperature up to 750°C, which can be ascribed to the formation of well-crystallized metal oxides during calcination. Under experimental conditions, 97.8% degradation efficiency of RhB and 98.9% degradation efficiency of paracetamol were achieved after 240min. Active species trapping and EPR experiments suggested that hole (h(+)), superoxide radical (O2(-)) and hydroxyl radical (OH) played important roles during the RhB photocatalytic process. Moreover, the results indicated that the synthesized Zn-Al-Ce-MMO materials had good stability and reusability.

  14. Enhanced photocatalytic activity of Ce-doped Zn-Al multi-metal oxide composites derived from layered double hydroxide precursors.

    PubMed

    Zhu, Jianyao; Zhu, Zhiliang; Zhang, Hua; Lu, Hongtao; Qiu, Yanling; Zhu, Linyan; Küppers, Stephan

    2016-11-01

    In this work, a series of novel Zn-Al-Ce multi-metal oxide (Zn-Al-Ce-MMO) photocatalysts with different Ce doping contents were prepared by calcination of Ce-doped Zn-Al layered double hydroxide (Zn-Al-Ce-LDH) precursors at various temperatures in air atmosphere. The synthesized Zn-Al-Ce-MMO materials were characterized by XRD, FTIR, TGA, BET, SEM, TEM, XPS and UV-vis DRS. The photocatalytic activities of the Zn-Al-Ce-MMO materials were evaluated by the photodegradation of rhodamine B (RhB) dye and paracetamol in aqueous solution under simulated solar light irradiation. The result of photodegradation of RhB showed that the Zn-Al-Ce-MMO samples exhibit much higher photocatalytic activity than that of Zn-Al-MMO, and the optimal Ce doping content is 5% of mole ratio (nCe/n(Zn+Al+Ce)). The enhanced photocatalytic activity of the Zn-Al-Ce-MMO was mainly attributed to the increasing in the separation efficiency of electrons and holes. The effect of calcination temperature was also studied. The photocatalytic activity of Zn-Al-Ce-MMO increased with increasing calcination temperature up to 750°C, which can be ascribed to the formation of well-crystallized metal oxides during calcination. Under experimental conditions, 97.8% degradation efficiency of RhB and 98.9% degradation efficiency of paracetamol were achieved after 240min. Active species trapping and EPR experiments suggested that hole (h(+)), superoxide radical (O2(-)) and hydroxyl radical (OH) played important roles during the RhB photocatalytic process. Moreover, the results indicated that the synthesized Zn-Al-Ce-MMO materials had good stability and reusability. PMID:27474815

  15. Layers

    NASA Astrophysics Data System (ADS)

    Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2014-09-01

    The temperature-dependent photoresponse characteristics of MnAl2S4 layers have been investigated, for the first time, by use of photocurrent (PC) spectroscopy. Three peaks were observed at all temperatures. The electronic origin of these peaks was associated with band-to-band transitions from the valence-band states Γ4( z), Γ5( x), and Γ5( y) to the conduction-band state Γ1( s). On the basis of the relationship between PC-peak energy and temperature, the optical band gap could be well expressed by the expression E g( T) = E g(0) - 2.80 × 10-4 T 2/(287 + T), where E g(0) was estimated to be 3.7920 eV, 3.7955 eV, and 3.8354 eV for the valence-band states Γ4( z), Γ5( x), and Γ5( y), respectively. Results from PC spectroscopy revealed the crystal-field and spin-orbit splitting were 3.5 meV and 39.9 meV. The gradual decrease of PC intensity with decreasing temperature can be explained on the basis of trapping centers associated with native defects in the MnAl2S4 layers. Plots of log J ph, the PC current density, against 1/ T, revealed a dominant trap level in the high-temperature region. By comparing PC and the Hall effect results, we confirmed that this trap level is a shallow donor 18.9 meV below the conduction band.

  16. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

    PubMed Central

    2013-01-01

    ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10−3 Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl2O4 and ZnO phases during high-temperature annealing ZnO/Al2O3 multilayers. It was found that pure ZnAl2O4 film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al2O3 sublayers, which could only be deposited precisely by utilizing ALD technology. PMID:23537274

  17. Layered-MnO₂ Nanosheet Grown on Nitrogen-Doped Graphene Template as a Composite Cathode for Flexible Solid-State Asymmetric Supercapacitor.

    PubMed

    Liu, Yongchuan; Miao, Xiaofei; Fang, Jianhui; Zhang, Xiangxin; Chen, Sujing; Li, Wei; Feng, Wendou; Chen, Yuanqiang; Wang, Wei; Zhang, Yining

    2016-03-01

    Flexible solid-state supercapacitors provide a promising energy-storage alternative for the rapidly growing flexible and wearable electronic industry. Further improving device energy density and developing a cheap flexible current collector are two major challenges in pushing the technology forward. In this work, we synthesize a nitrogen-doped graphene/MnO2 nanosheet (NGMn) composite by a simple hydrothermal method. Nitrogen-doped graphene acts as a template to induce the growth of layered δ-MnO2 and improves the electronic conductivity of the composite. The NGMn composite exhibits a large specific capacitance of about 305 F g(-1) at a scan rate of 5 mV s(-1). We also create a cheap and highly conductive flexible current collector using Scotch tape. Flexible solid-state asymmetric supercapacitors are fabricated with NGMn cathode, activated carbon anode, and PVA-LiCl gel electrolyte. The device can achieve a high operation voltage of 1.8 V and exhibits a maximum energy density of 3.5 mWh cm(-3) at a power density of 0.019 W cm(-3). Moreover, it retains >90% of its initial capacitance after 1500 cycles. Because of its flexibility, high energy density, and good cycle life, NGMn-based flexible solid state asymmetric supercapacitors have great potential for application in next-generation portable and wearable electronics.

  18. Widely-tunable, passively Q-switched erbium-doped fiber laser with few-layer MoS2 saturable absorber.

    PubMed

    Huang, Yizhong; Luo, Zhengqian; Li, Yingyue; Zhong, Min; Xu, Bin; Che, Kaijun; Xu, Huiying; Cai, Zhiping; Peng, Jian; Weng, Jian

    2014-10-20

    We propose and demonstrate a MoS2-based passively Q-switched Er-doped fiber laser with a wide tuning range of 1519.6-1567.7 nm. The few-layer MoS2 nano-platelets are prepared by the liquid-phase exfoliation method, and are then made into polymer-composite film to construct the fiber-compatible MoS2 saturable absorber (SA). It is measured at 1560 nm wavelength, that such MoS2 SA has the modulation depth of ∼ 2% and the saturable optical intensity of ∼ 10 MW/cm(2). By further inserting the filmy MoS2-SA into an Er-doped fiber laser, stable Q-switching operation with a 48.1 nm continuous tuning from S- to C-waveband is successfully achieved. The shortest pulse duration and the maximum pulse energy are 3.3 μs and 160 nJ, respectively. The repetition rate and the pulse duration under different operation conditions have been also characterized. To the best of our knowledge, it is the first demonstration of MoS2 Q-switched, widely-tunable fiber laser.

  19. A High-Lift Building Block Flow: Turbulent Boundary Layer Relaminarization A Final Report

    NASA Technical Reports Server (NTRS)

    Bourassa, Corey; Thomas, Flint O.; Nelson, Robert C.

    2000-01-01

    Experimental evidence exists which suggests turbulent boundary layer relaminarization may play an important role in the inverse Reynolds number effect in high-lift systems. An experimental investigation of turbulent boundary layer relaminarization has been undertaken at the University of Notre Dame's Hessert Center for Aerospace Research in cooperation with NASA Dryden Flight Research Center. A wind tunnel facility has been constructed at the Hessert Center and relaminarization achieved. Preliminary evidence suggests the current predictive tools available are inadequate at determining the onset of relaminarization. In addition, an in-flight relaminarization experiment for the NASA Dryden FTF-II has been designed to explore relaminarization at Mach and Reynolds numbers more typical of commercial high-lift systems.

  20. Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

    NASA Astrophysics Data System (ADS)

    MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

    2016-03-01

    In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

  1. Comprehensive Studies of NbS2 and the Affects of Nb Doping in the Layered Systems of WS2 and MoS2

    NASA Astrophysics Data System (ADS)

    Cooper, Brian; Terrones, Mauricio; Mallouk, Tom; Henderson, Camden; Kovtyukhova, Nina

    2013-03-01

    Research on layered dichalcogenides (compounds of the form MX2, with M as a metal and X as any member of group 16 in the periodic table) has picked up momentum due to a sympathetic reverberation created in response to the enormously prodigious research in graphene. Although much progress in graphene research has been made, there are still many hurdles to clear, and prudence has made requisite parallel courses in research. Layered dichalcogenides exhibit similar features to graphene; namely they are relatively easy to exfoliate, and have hexagonal symmetries, but unlike graphene, these compounds represent a spanning set of the materials under investigation in various scientific branches (e . g . superconductors, semiconductors, topological insulators, etc.). We have taken many approaches to the synthesis, manipulation, and device design of these materials. In our attempts to better understand the role of doping Nb into the MoS2 and WS2 systems, we serendipitously realized the merits, which previously lay quiescent, of studying NbS2 itself. A metallic dichalcogenide, NbS2 exhibits both charge density wave and superconducting phase transitions below respective appropriate temperatures. Studying mono, bi, and tri-layer geometries have afforded us the opportunities to probe not only the details of quantum confinement effects in the NbS2 system, but also how these effects percolate through and affect the various properties of other dichalcogenidal systems.

  2. Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction.

    PubMed

    Du, Juan; Wang, Qingkai; Jiang, Guobao; Xu, Changwen; Zhao, Chujun; Xiang, Yuanjiang; Chen, Yu; Wen, Shuangchun; Zhang, Han

    2014-01-01

    By coupling few-layer Molybdenum Disulfide (MoS2) with fiber-taper evanescent light field, a new type of MoS2 based nonlinear optical modulating element had been successfully fabricated as a two-dimensional layered saturable absorber with strong light-matter interaction. This MoS2-taper-fiber device is not only capable of passively mode-locking an all-normal-dispersion ytterbium-doped fiber laser and enduring high power laser excitation (up to 1 W), but also functions as a polarization sensitive optical modulating component (that is, different polarized light can induce different nonlinear optical response). Thanks to the combined advantages from the strong nonlinear optical response in MoS2 together with the sufficiently-long-range interaction between light and MoS2, this device allows for the generation of high power stable dissipative solitons at 1042.6 nm with pulse duration of 656 ps and a repetition rate of 6.74 MHz at a pump power of 210 mW. Our work may also constitute the first example of MoS2-enabled wave-guiding photonic device, and potential y give some new insights into two-dimensional layered materials related photonics. PMID:25213108

  3. An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells.

    PubMed

    Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

    2016-06-01

    NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.

  4. Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum

    SciTech Connect

    Yuan Hai; Luo Bing; Yu Dan; Cheng, An-jen; Campbell, Stephen A.; Gladfelter, Wayne L.

    2012-01-15

    Aluminum-doped ZnO films were prepared by atomic layer deposition at 250 deg. C using diethylzinc (DEZ), trimethylaluminum (TMA), and ozone as the precursors. Two deposition methods were compared to assess their impact on the composition, structural, electrical, and optical properties as a function of Al concentration. The first method controlled the Al concentration by changing the relative number of Al to Zn deposition cycles; a process reported in the literature where water was used as the oxygen source. The second method involved coinjection of the DEZ and TMA during each cycle where the partial pressures of the precursors control the aluminum concentration. Depth profiles of the film composition using Auger electron spectroscopy confirmed a layered microstructure for the films prepared by the first method, whereas the second method led to a homogeneous distribution of the aluminum throughout the ZnO film. Beneath the surface layer the carbon concentrations for all of the films were below the detection limit. Comparison of their electrical and optical properties established that films deposited by coinjection of the precursors were superior.

  5. Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction.

    PubMed

    Du, Juan; Wang, Qingkai; Jiang, Guobao; Xu, Changwen; Zhao, Chujun; Xiang, Yuanjiang; Chen, Yu; Wen, Shuangchun; Zhang, Han

    2014-09-12

    By coupling few-layer Molybdenum Disulfide (MoS2) with fiber-taper evanescent light field, a new type of MoS2 based nonlinear optical modulating element had been successfully fabricated as a two-dimensional layered saturable absorber with strong light-matter interaction. This MoS2-taper-fiber device is not only capable of passively mode-locking an all-normal-dispersion ytterbium-doped fiber laser and enduring high power laser excitation (up to 1 W), but also functions as a polarization sensitive optical modulating component (that is, different polarized light can induce different nonlinear optical response). Thanks to the combined advantages from the strong nonlinear optical response in MoS2 together with the sufficiently-long-range interaction between light and MoS2, this device allows for the generation of high power stable dissipative solitons at 1042.6 nm with pulse duration of 656 ps and a repetition rate of 6.74 MHz at a pump power of 210 mW. Our work may also constitute the first example of MoS2-enabled wave-guiding photonic device, and potential y give some new insights into two-dimensional layered materials related photonics.

  6. Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction

    PubMed Central

    Du, Juan; Wang, Qingkai; Jiang, Guobao; Xu, Changwen; Zhao, Chujun; Xiang, Yuanjiang; Chen, Yu; Wen, Shuangchun; Zhang, Han

    2014-01-01

    By coupling few-layer Molybdenum Disulfide (MoS2) with fiber-taper evanescent light field, a new type of MoS2 based nonlinear optical modulating element had been successfully fabricated as a two-dimensional layered saturable absorber with strong light-matter interaction. This MoS2-taper-fiber device is not only capable of passively mode-locking an all-normal-dispersion ytterbium-doped fiber laser and enduring high power laser excitation (up to 1 W), but also functions as a polarization sensitive optical modulating component (that is, different polarized light can induce different nonlinear optical response). Thanks to the combined advantages from the strong nonlinear optical response in MoS2 together with the sufficiently-long-range interaction between light and MoS2, this device allows for the generation of high power stable dissipative solitons at 1042.6 nm with pulse duration of 656 ps and a repetition rate of 6.74 MHz at a pump power of 210 mW. Our work may also constitute the first example of MoS2-enabled wave-guiding photonic device, and potentially give some new insights into two-dimensional layered materials related photonics. PMID:25213108

  7. An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells.

    PubMed

    Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

    2016-06-01

    NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis. PMID:27216291

  8. Efficacy of different final irrigant activation protocols on smear layer removal by EDTA and citric acid.

    PubMed

    Herrera, Daniel R; Santos, Zarina T; Tay, Lidia Y; Silva, Emmanuel J; Loguercio, Alessandro D; Gomes, Brenda P F A

    2013-04-01

    The aim of this study was to evaluate the influence of different activation protocols for chelating agents used after chemo-mechanical preparation (CMP), for smear layer (SL) removal. Forty-five single-rooted human premolars with straight canals and fully formed apex were selected. The specimens were randomly divided into three groups depending on the chelating agent used for smear layer removal: distilled water (DW, control group); 17% ethylenediaminetetraacetic acid (EDTA); and 10% citric acid (CA). Each group was further divided into three subgroups according to the activation protocol used: no-activation (NA), manual dynamic activation (MDA), or sonic activation (SA). After CMP, all specimens were sectioned and processed for observation of the apical thirds by using scanning electron microscopy (SEM). Two calibrated evaluators attributed scores to each specimen. The differences between activation protocols were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Friedman and Wilcoxon signed rank tests were used for comparison between each root canal third. When chelating agents were activated, either by MDA or SA, it was obtained the best cleaning results with no significant difference between EDTA and CA (P > 0.05). Sonic activation showed the best results when root canal thirds were analyzed, in comparison to MDA and NA groups (P < 0.05). The activation of chelating agents, independent of the protocol used, benefits smear layer removal from root canals.

  9. High-gain complementary metal-oxide-semiconductor inverter based on multi-layer WSe2 field effect transistors without doping

    NASA Astrophysics Data System (ADS)

    Kang, Won-Mook; Cho, In-Tak; Roh, Jeongkyun; Lee, Changhee; Lee, Jong-Ho

    2016-10-01

    A high-gain complementary metal-oxide-semiconductor (CMOS) logic inverter was implemented by fabricating p- and n-type field effect transistors (FETs) based on multi-layer WSe2 on the same wafer. Au as a high work-function metal is contacted to WSe2 for the source/drain of the p-type FET. The n-type FET has an Al electrode contacted to WSe2 for the source/drain. Both FETs were designed to have similar on-current densities (>10-7 A μm-1) and high on/off current ratios (>106). The inverter shows excellent switching characteristics including relatively high voltage gains (>25) and high noise margins (>0.9) in the range of supply voltage from 2 V to 8 V. This work has a great significance in the realization of a CMOS logic gate based on WSe2 without an additional doping scheme.

  10. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    NASA Astrophysics Data System (ADS)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2016-06-01

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (ScxAl1-xN) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S21 measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  11. Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide

    NASA Astrophysics Data System (ADS)

    Sadana, D. K.; de Souza, J. P.; Cardone, F.

    1991-03-01

    Carrier concentrations at a level of ≳1×1019 cm-3 were achieved when Si-capped GaAs underwent rapid thermal oxidation (RTO) in Ar+0.1% O2 ambient at 850-1000 °C for 10-60 s followed by rapid thermal annealing (RTA) in Ar ambient at 850-950 °C. Carrier concentrations in the RTO only samples were in the range of 2-5×1018 cm-3. Kinetic data on the diffusion of Si under RTO and RTO+RTA conditions are presented. The enhancement in the electrical activation of the diffused Si during RTA appears to be partly due to its local atomic rearrangement and partly due to redistribution in the GaAs. Ohmic contacts to the doped layer were made using Au-Ge-Ni alloy and contact resistances of ≲0.1 Ω mm were obtained.

  12. Improved efficiency in organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium doped 9,10-di(2-naphthyl) anthracene emission layer

    NASA Astrophysics Data System (ADS)

    Yuan, Yongbo; Lian, Jiarong; Li, Shuang; Zhou, Xiang

    2008-11-01

    Organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium (Alq3) doped 9,10-di(2-naphthyl) anthracene (ADN) as the emission layer (EML) have been fabricated. These devices exhibit efficient electroluminescence (EL) originated from the Alq3 as the mass ratio of Alq3 to ADN was varied from 1 to 50%. The devices with an optimal Alq3 mass ratio of 10 wt% showed a peak EL efficiency and an external quantum efficiency of 9.1 cd A-1 and 2.7% at a luminance of 1371 cd m-2, which is improved by a factor of 2.2 compared with 4.1 cd A-1 and 1.2% at a luminance of 3267 cd m-2 for conventional devices with the neat Alq3 as the EML.

  13. A final report on hydrothermal testing of sup 99 Tc-doped glass waste form and waste package components

    SciTech Connect

    Schramke, J.A.; Thomas, L.E.; McKinley, S.G.; Simonson, S.A.; Coles, D.G.; Westinghouse Hanford Co., Richland, WA; Pacific Northwest Lab., Richland, WA )

    1984-07-01

    This document reports the results of four experiments using borosilicate glass doped with the key radionuclide {sup 99}Technicium. The experiments were performed in Dickson rocking autoclaves at 200{degree}C, 30MPa pressure for 3 months. Starting materials consisted of the doped glass (+ undoped borosilicate glass){center dot} in GR-3 groundwater. To simulate various possible interactions among waste package components, the glass-groundwater starting materials were run either alone, or combined with RUE-basalt, or cast steel or both. The Dickson autocalve allowed periodic sampling of the fluid, through which concentrations of dissolved species were monitored. In the glass-only experiment, Tc concentration increased until reaching an apparent steady-state concentration of 55 mg/1 after 1000 hours. In runs with basalt, steel or both, this concentration reached steady-state at three or more orders of magnitude below that. 29 refs., 23 figs., 8 tabs.

  14. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    SciTech Connect

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  15. Electrodeposition of Mg doped ZnO thin film for the window layer of CIGS solar cell

    NASA Astrophysics Data System (ADS)

    Wang, Mang; Yi, Jie; Yang, Sui; Cao, Zhou; Huang, Xiaopan; Li, Yuanhong; Li, Hongxing; Zhong, Jianxin

    2016-09-01

    Mg doped ZnO (ZMO) film with the tunable bandgap can adjust the conduction band offset of the window/chalcopyrite absorber heterointerface to positive to reduce the interface recombination and resulting in an increasement of chalcopyrite based solar cell efficiency. A systematic study of the effect of the electrodeposition potential on morphology, crystalline structure, crystallographic orientation and optical properties of ZMO films was investigated. It is interestingly found that the prepared doped samples undergo a significant morphological change induced by the deposition potential. With negative shift of deposition potential, an obvious morphology evolution from nanorod structrue to particle covered films was observed. A possible growth mechanism for explaining the morphological change is proposed and briefly discussed. The combined optical techniques including absorption, transmission and photoluminescence were used to study the obtained ZMO films deposited at different potential. The sample deposited at -0.9 V with the hexagonal nanorods morphology shows the highest optical transparency of 92%. The photoluminescence spectra reveal that the crystallization of the hexagonal nanorod ZMO thin film deoposited at -0.9 V is much better than the particles covered ZMO thin film. Combining the structural and optical properties analysis, the obtained normal hexagonal nanorod ZMO thin film could potentially be useful in nanostructured chalcopyrite solar cells to improve the device performance.

  16. Meso/macroporous nitrogen-doped carbon architectures with iron carbide encapsulated in graphitic layers as an efficient and robust catalyst for the oxygen reduction reaction in both acidic and alkaline solutions.

    PubMed

    Xiao, Meiling; Zhu, Jianbing; Feng, Ligang; Liu, Changpeng; Xing, Wei

    2015-04-17

    Meso-/macroporous nitrogen-doped carbon architectures with iron carbide encapsulated in graphitic layers are fabricated by a facile approach. This efficient and robust material exhibits superior catalytic performance toward the oxygen reduction reaction in both acidic and alkaline solutions and is the most promising alternative to a Pt catalyst for use in electrochemical energy devices.

  17. Final Progress Report: FRACTURE AND SUBCRITICAL DEBONDING IN THIN LAYERED STRUCTURES: EXPERIMENTS AND MULTI-SCALE MODELING

    SciTech Connect

    Reinhold H. Dauskardt

    2005-08-30

    Final technical report detailing unique experimental and multi-scale computational modeling capabilities developed to study fracture and subcritical cracking in thin-film structures. Our program to date at Stanford has studied the mechanisms of fracture and fatigue crack-growth in structural ceramics at high temperature, bulk and thin-film glasses in selected moist environments where we demonstrated the presence of a true mechanical fatigue effect in some glass compositions. We also reported on the effects of complex environments and fatigue loading on subcritical cracking that effects the reliability of MEMS and other micro-devices using novel micro-machined silicon specimens and nanomaterial layers.

  18. Porous nitrogen-doped carbon microspheres derived from microporous polymeric organic frameworks for high performance electric double-layer capacitors.

    PubMed

    Han, Jinpeng; Xu, Guiyin; Dou, Hui; MacFarlane, Douglas R

    2015-02-01

    This research presents a simple and efficient method to synthesize porous nitrogen-doped carbon microspheres (PNCM) by the carbonization of microporous poly(terephthalaldehyde-pyrrole) organic frameworks (PtpOF). The common KOH activation process is used to tune the porous texture of the PNCM and produce an activated-PNCM (A-PNCM). The PNCM and A-PNCM with specific surface area of 921 and 1303 m(2)  g(-1) , respectively, are demonstrated as promising candidates for EDLCs. At a current density of 0.5 A g(-1) , the specific capacitances of the PNCM and A-PNCM are 248 and 282 F g(-1) , respectively. At the relatively high current density of 20 A g(-1) , the capacitance remaining is 95 and 154 F g(-1) , respectively. Capacity retention of the A-PNCM is more than 92% after 10000 charge/discharge cycles at a current density of 2 A g(-1) .

  19. Analysis of the photodiode boundary layer transition indicator. LDRD final report

    SciTech Connect

    Kuntz, D.W.; Wilken, A.C.; Payne, J.L.

    1994-06-01

    The photodiode transition indicator is a device which has been successfully used to determine the onset of boundary layer transition on numerous hypersonic flight vehicles. The exact source of the electromagnetic radiation detected by the photodiode at transition was not understood. In some cases early saturation of the device occurred, and the device failed to detect transition. Analyses have been performed to determine the source of the radiation producing the photodiode signal. The results of these analyses indicate that the most likely source of the radiation is blackbody emission from the heatshield material bordering the quartz window of the device. Good agreement between flight data and calculations based on this radiation source has been obtained. Analyses also indicate that the most probable source of the radiation causing early saturation is blackbody radiation from carbon particles which break away from the nosetip during the ablation process.

  20. Nonlinear interactions in mixing layers and compressible heated round jets. Ph.D. Thesis Final Report

    NASA Technical Reports Server (NTRS)

    Jarrah, Yousef Mohd

    1989-01-01

    The nonlinear interactions between a fundamental instability mode and both its harmonics and the changing mean flow are studied using the weakly nonlinear stability theory of Stuart and Watson, and numerical solutions of coupled nonlinear partial differential equations. The first part focuses on incompressible cold (or isothermal; constant temperature throughout) mixing layers, and for these, the first and second Landau constants are calculated as functions of wavenumber and Reynolds number. It is found that the dominant contribution to the Landau constants arises from the mean flow changes and not from the higher harmonics. In order to establish the range of validity of the weakly nonlinear theory, the weakly nonlinear and numerical solutions are compared and the limitation of each is discussed. At small amplitudes and at low-to-moderate Reynolds numbers, the two results compare well in describing the saturation of the fundamental, the distortion of the mean flow, and the initial stages of vorticity roll-up. At larger amplitudes, the interaction between the fundamental, second harmonic, and the mean flow is strongly nonlinear and the numerical solution predicts flow oscillations, whereas the weakly nonlinear theory yields saturation. In the second part, the weakly nonlinear theory is extended to heated (or nonisothermal; mean temperature distribution) subsonic round jets where quadratic and cubic nonlinear interactions are present, and the Landau constants also depend on jet temperature ratio, Mach number and azimuthal mode number. Under exponential growth and nonlinear saturation, it is found that heating and compressibility suppress the growth of instability waves, that the first azimuthal mode is the dominant instability mode, and that the weakly nonlinear solution describes the early stages of the roll-up of an axisymmetric shear layer. The receptivity of a typical jet flow to pulse type input disturbance is also studied by solving the initial value problem

  1. Local structure of Fe in Fe-doped misfit-layered calcium cobaltite: An X-ray absorption spectroscopy study

    SciTech Connect

    Prasoetsopha, Natkrita; Pinitsoontorn, Supree; Bootchanont, Atipong; Kidkhunthod, Pinit; Srepusharawoot, Pornjuk; Kamwanna, Teerasak; Amornkitbamrung, Vittaya; Kurosaki, Ken; Yamanaka, Shinsuke

    2013-08-15

    Polycrystalline Ca{sub 3}Co{sub 4−x}Fe{sub x}O{sub 9+δ} ceramics (x=0, 0.01, 0.03, 0.05) were fabricated using a simple thermal hydro-decomposition method and a spark plasma sintering technique. Thermoelectric property measurements showed that increasing Fe concentration resulted in a decrease in electrical resistivity, thermopower and thermal conductivity, leading to an improvement in the dimensionless figure-of-merit, >35% for x=0.05 at 1073 K. An X-ray absorption spectroscopy technique was used to investigate the local structure of Fe ions in the Ca{sub 3}Co{sub 4−x}Fe{sub x}O{sub 9+δ} structure for the first time. By fitting data from the extended X-ray absorption fine structure (EXAFS) spectra and analyzing the X-ray absorption near-edge structure (XANES) spectra incorporated with first principle simulation, it was shown that Fe was substituted for Co in the the Ca{sub 2}CoO{sub 3} (rocksalt, RS) layer rather than in the CoO{sub 2} layer. Variation in the thermoelectric properties as a function of Fe concentration was attributed to charge transfer between the CoO{sub 2} and the RS layers. The origin of the preferential Fe substitution site was investigated considering the ionic radii of Co and Fe and the total energy of the system. - Graphical abstract: The Fe K-edge XANES spectra of: (a) experimental result in comparison to the simulated spectra when Fe atoms were substituted in the RS layer; (b) with magnetic moment; (c) without magnetic moment, and in the CoO{sub 2} layer; (d) with magnetic moment and (e) without magnetic moment. Highlights: • Synthesis, structural studies, and thermoelectric properties of Ca{sub 3}Co{sub 4−x}Fe{sub x}O{sub 9+δ}. • Direct evidence for the local structure of the Fe ions in the Ca{sub 3}Co{sub 4−x}Fe{sub x}O{sub 9+δ} using XAS analysis. • EXAFS and XANES analysis showed that Fe was likely to be situated in the RS layer structure. • Changes in TE property with Fe content was due to charge transfer between

  2. Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

    SciTech Connect

    Kurai, Satoshi Ushijima, Fumitaka; Yamada, Yoichi; Miyake, Hideto; Hiramatsu, Kazumasa

    2014-02-07

    The spatial distribution of luminescence in Si-doped AlGaN epitaxial layers that differ in Al content and Si concentration has been studied by cathodoluminescence (CL) mapping in combination with scanning electron microscopy. The density of surface hillocks increased with decreasing Al content and with increasing Si concentration. The mechanisms giving rise to those hillocks are likely different. The hillocks induced surface roughening, and the compositional fluctuation and local donor-acceptor-pair (DAP) emission at hillock edges in AlGaN epitaxial layers were enhanced irrespective of the origin of the hillocks. The intensity of local DAP emission was related to Si concentration, as well as to hillock density. CL observation revealed that DAP emission areas were present inside the samples and were likely related to dislocations concentrated at hillock edges. Possible candidates for acceptors in the observed DAP emission that are closely related in terms of both Si concentration and hillock edges with large deformations are a V{sub III}-Si{sub III} complex and Si{sub N}, which are unfavorable in ordinary III-nitrides.

  3. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

    PubMed Central

    2012-01-01

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it. PMID:22222067

  4. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    SciTech Connect

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 μm to a modest 0.50 μm over an underlying 0.10-μm intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 μm/3 μm) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  5. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer.

    PubMed

    Baek, Seong-Ho; Noh, Bum-Young; Park, Il-Kyu; Kim, Jae Hyun

    2012-01-05

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.

  6. Effect of the microstructural characteristics of a Ga-doped TiO2 hole block layer on an inverted structure organic solar cell

    NASA Astrophysics Data System (ADS)

    Lee, Eun Ju; Ryu, Sang Ouk

    2016-09-01

    Inverted-structure organic solar cells (OSCs) were fabricated using atomic-layer-deposition (ALD) processed Ga-doped TiO2 as hole blocking layer (HBL). Measured photovoltaic efficiencies were greatly related to the crystallinity of the TiO2 films. However, the efficiencies of the OSCs and the crystallinity of the HBL did not show a linear relationship. The HBL was fully crystallized at a deposition temperature of 200 °C or above, and the power conversion efficiency was measured to be 2.7% with for the HBL processed at 200 °C, but the efficiency decreased to 2.4% for the HBL processed at 250 °C. On the other hand, the surface roughness of the crystallized films was found be increased to two fold in the studied temperature range. Once the HBL had been fully crystallized, the major factor that determined the overall performance of OSCs was the surface roughness of the HBL.

  7. Fluorometric sensing of ultralow As(III) concentrations using Ag doped hollow CdS/ZnS bi-layer nanoparticles.

    PubMed

    Boxi, Siddhartha Sankar; Paria, Santanu

    2015-12-21

    Arsenic poisoning from drinking water has been an important global issue in recent years. Because of the high level toxicity of arsenic to human health, an easy, inexpensive, low level and highly selective detection technique is of great importance to take any early precautions. This study reports the synthesis of Ag doped hollow CdS/ZnS bi-layer (Ag-h-CdS/ZnS) nanoparticles for the easy fluorometric determination of As(iii) ions in the aqueous phase. The hollow bi-layer structures were synthesized by a sacrificial core method using AgBr as the sacrificial core and the core was removed by dissolution in an ammonium hydroxide solution. The synthesized nanoparticles were characterized using different instrumental techniques. A good linear relationship was obtained between fluorescence quenching intensity and As(iii) concentration in the range of 0.75-22.5 μg L(-1) at neutral pH with a limit of detection as low as 0.226 μg L(-1). PMID:26541652

  8. Transforming the representation of the boundary layer and low clouds for high-resolution regional climate modeling: Final report

    SciTech Connect

    Huang, Hsin-Yuan; Hall, Alex

    2013-07-24

    the mostly dry mountain-breeze circulations force an additional component that results in semi-diurnal variations near the coast. A series of numerical tests, however, reveal sensitivity of the simulations to the choice of vertical grid, limiting the possibility of solid quantitative statements on the amplitudes and phases of the diurnal and semidiurnal components across the domain. According to our experiments, the Mellor-Yamada-Nakanishi-Niino (MYNN) boundary layer scheme and the WSM6 microphysics scheme is the combination of schemes that performs best. For that combination, mean cloud cover, liquid water path, and cloud depth are fairly wellsimulated, while mean cloud top height remains too low in comparison to observations. Both microphysics and boundary layer schemes contribute to the spread in liquid water path and cloud depth, although the microphysics contribution is slightly more prominent. Boundary layer schemes are the primary contributors to cloud top height, degree of adiabaticity, and cloud cover. Cloud top height is closely related to surface fluxes and boundary layer structure. Thus, our study infers that an appropriate tuning of cloud top height would likely improve the low-cloud representation in the model. Finally, we show that entrainment governs the degree of adiabaticity, while boundary layer decoupling is a control on cloud cover. In the intercomparison study using WRF single-column model experiments, most parameterizations show a poor agreement of the vertical boundary layer structure when compared with large-eddy simulation models. We also implement a new Total-Energy/Mass- Flux boundary layer scheme into the WRF model and evaluate its ability to simulate both stratocumulus and shallow cumulus clouds. Result comparisons against large-eddy simulation show that this advanced parameterization based on the new Eddy-Diffusivity/Mass-Flux approach provides a better performance than other boundary layer parameterizations.

  9. Clouds, Aerosol, and Precipitation in the Marine Boundary Layer (CAP-MBL) Final Campaign Report

    SciTech Connect

    Wood, R.

    2016-01-01

    The extensive coverage of low clouds over the subtropical eastern oceans greatly impacts the current climate. In addition, the response of low clouds to changes in atmospheric greenhouse gases and aerosols is a major source of uncertainty, which thwarts accurate prediction of future climate change. Low clouds are poorly simulated in climate models, partly due to inadequate long-term simultaneous observations of their macrophysical and microphysical structure, radiative effects, and associated aerosol distribution in regions where their impact is greatest. The thickness and extent of subtropical low clouds is dependent on tight couplings between surface fluxes of heat and moisture, radiative cooling, boundary layer turbulence, and precipitation (much of which evaporates before reaching the ocean surface and is closely connected to the abundance of cloud condensation nuclei). These couplings have been documented as a result of past field programs and model studies. However, extensive research is still required to achieve a quantitative understanding sufficient for developing parameterizations, which adequately predict aerosol indirect effects and low cloud response to climate perturbations. This is especially true of the interactions between clouds, aerosol, and precipitation. These processes take place in an ever-changing synoptic environment that can confound interpretation of short time period observations.

  10. Impact of Copper-Doped Titanium Dioxide Interfacial Layers on the Interface-State and Electrical Properties of Si-based MOS Devices

    NASA Astrophysics Data System (ADS)

    Akin, Seçkİn; Sönmezoğlu, Savaş

    2015-09-01

    The current study presents the interface-state and electrical properties of silicon (Si)-based metal-oxide-semiconductor (MOS) devices using copper-doped titanium dioxide (Cu:TiO2) nanoparticles for possible applications as an interfacial layer in scaled high-k/metal gate MOSFET technology. The structural properties of the Cu:TiO2 nanoparticles have been obtained by means of X-ray diffraction (XRD), UV-Vis-NIR spectrometry, atomic force microscopy, and scanning electron microscopy measurements; they were compared with pure TiO2 thin film. With the incorporation of Cu, rutile-dominated anatase/rutile multiphase crystalline was revealed by XRD analysis. To understand the nature of this structure, the electronic parameters controlling the device performance were calculated using current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The ideality factor ( n) was 1.21 for the Al/Cu:TiO2/ p-Si MOS device, while the barrier height ϕ b was 0.75 eV with semi-log I- V characteristics. This is in good agreement with 0.78 eV measured by the Norde model. Possible reasons for the deviation of the ideality factor from unity have been addressed. From the C- V measurements, the values of diffusion potential, barrier height, and carrier concentration were extracted as 0.67, 0.98 eV, and 8.73 × 1013 cm-3, respectively. Our results encourage further work to develop process steps that would allow the Cu-doped TiO2 film/Si interface to play a major role in microelectronic applications.

  11. Atomic layer deposition of highly-doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Roenn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-05-01

    Recently, rare-earth doped waveguide amplifiers (REDWAs) have drawn significant attention as a promising solution to on-chip amplification of light in silicon photonics and integrated optics by virtue of their high excited state lifetime (up to 10 ms) and broad emission spectrum (up to 200 nm) at infrared wavelengths. In the family of rare-earths, at least erbium, holmium, thulium, neodymium and ytterbium have been demonstrated to be good candidates for amplifier operation at moderate concentrations (< 0.1 %). However, efficient amplifier operation in REDWAs is a very challenging task because high concentration of ions (<0.1%) is required in order to produce reasonable amplification over short device length. Inevitably, high concentration of ions leads to energy-transfer between neighboring ions, which results as decreased gain and increased noise in the amplifier system. It has been shown that these energy-transfer mechanisms in highly-doped gain media are inversely proportional to the sixth power of the distance between the ions. Therefore, novel fabrication techniques with the ability to control the distribution of the rare-earth ions within the gain medium are urgently needed in order to fabricate REDWAs with high efficiency and low noise. Here, we show that atomic layer deposition (ALD) is an excellent technique to fabricate highly-doped (<1%) RE:Al2O3 gain materials by using its nanoscale engineering ability to delicately control the incorporation of RE ions during the deposition. In our experiment, we fabricated Er:Al2O3 and Tm:Al2O3 thin films with ALD by varying the concentration of RE ions from 1% to 7%. By measuring the photoluminescence response of the fabricated samples, we demonstrate that it is possible to incorporate up to 5% of either Er- or Tm-ions in Al2O3 host before severe quenching occurs. We believe that this technique can be extended to other RE ions as well. Therefore, our results show the exceptionality of ALD as a deposition technique for

  12. LDRD Project 52523 final report :Atomic layer deposition of highly conformal tribological coatings.

    SciTech Connect

    Jungk, John Michael; Dugger, Michael Thomas; George, Steve M.; Prasad, Somuri V.; Grubbs, Robert K.; Moody, Neville Reid; Mayer, Thomas Michael; Scharf, Thomas W.; Goeke, Ronald S.; Gerberich, William W.

    2005-10-01

    Friction and wear are major concerns in the performance and reliability of micromechanical (MEMS) devices. While a variety of lubricant and wear resistant coatings are known which we might consider for application to MEMS devices, the severe geometric constraints of many micromechanical systems (high aspect ratios, shadowed surfaces) make most deposition methods for friction and wear-resistance coatings impossible. In this program we have produced and evaluate highly conformal, tribological coatings, deposited by atomic layer deposition (ALD), for use on surface micromachined (SMM) and LIGA structures. ALD is a chemical vapor deposition process using sequential exposure of reagents and self-limiting surface chemistry, saturating at a maximum of one monolayer per exposure cycle. The self-limiting chemistry results in conformal coating of high aspect ratio structures, with monolayer precision. ALD of a wide variety of materials is possible, but there have been no studies of structural, mechanical, and tribological properties of these films. We have developed processes for depositing thin (<100 nm) conformal coatings of selected hard and lubricious films (Al2O3, ZnO, WS2, W, and W/Al{sub 2}O{sub 3} nanolaminates), and measured their chemical, physical, mechanical and tribological properties. A significant challenge in this program was to develop instrumentation and quantitative test procedures, which did not exist, for friction, wear, film/substrate adhesion, elastic properties, stress, etc., of extremely thin films and nanolaminates. New scanning probe and nanoindentation techniques have been employed along with detailed mechanics-based models to evaluate these properties at small loads characteristic of microsystem operation. We emphasize deposition processes and fundamental properties of ALD materials, however we have also evaluated applications and film performance for model SMM and LIGA devices.

  13. Effect of nitrogen doping on wetting and photoactive properties of laser processed zinc oxide-graphene oxide nanocomposite layers

    SciTech Connect

    György, E.; Pérez del Pino, A.; Logofatu, C.; Duta, A.; Isac, L.

    2014-07-14

    Zinc oxide-graphene oxide nanocomposite layers were submitted to laser irradiation in air or controlled nitrogen atmosphere using a frequency quadrupled Nd:YAG (λ = 266 nm, τ{sub FWHM} ≅ 3 ns, ν = 10 Hz) laser source. The experiments were performed in air at atmospheric pressure or in nitrogen at a pressure of 2 × 10{sup 4} Pa. The effect of the irradiation conditions, incident laser fluence value, and number of subsequent laser pulses on the surface morphology of the composite material was systematically investigated. The obtained results reveal that nitrogen incorporation improves significantly the wetting and photoactive properties of the laser processed layers. The kinetics of water contact angle variation when the samples are submitted to laser irradiation in nitrogen are faster than that of the samples irradiated in air, the surfaces becoming super-hydrophilic under UV light irradiation.

  14. Exchange bias and coercivity of Ni80Fe20 layer coupled with Fe-doped Cr2O3

    NASA Astrophysics Data System (ADS)

    Ki, Sanghoon; Dho, Joonghoe

    2010-05-01

    We have investigated the exchange bias and the coercivity in the ferromagnet Ni80Fe20 (NiFe) layer coupled with a polycrystalline Cr2(1-x)Fe2xO3(CFO; x=0.1,0.25) layer, which is known as an antiferromagnet with spiral spin order. For x=0.1, the exchange bias HEX and the coercivity HC at 10 K were 152 and 230 Oe, respectively, but their magnitudes rapidly decreased from 10 to 50 K at the temperature range that showed a splitting between zero-field-cooling and field-cooling magnetization data for the CFO target. This implies that the CFO has an unknown magnetic transition around ˜50 K in addition to the spiral antiferromagnetic transition at ˜250 K. For x=0.25, on the other hand, the exchange bias rapidly decreased from ˜170 Oe at 10 K to zero at ˜90 K.

  15. Grey scale memory in an optically addressed spatial light modulator with a Lu(Pc)2 doped layer

    NASA Astrophysics Data System (ADS)

    Guéna, M.; Wu, Z. Y.; L'Her, M.; Pondaven, A.; Cadiou, C.

    1998-02-01

    An optically addressed spatial light modulator with electrolyte bisphtalocyanine of lutetium incorporated in the alignment layer is shown to be capable of memorizing a grey scale image. The relationship between the memorized grey scale and the illumination is shown. The temperature, the concentration of Lu(Pc)2 and the spontaneous polarization of liquid crystals are found to have the effect on the memorization rate.

  16. Electrochemical performance of zirconium doped lithium rich layered Li1.2Mn0.54Ni0.13Co0.13O2 oxide with porous hollow structure

    NASA Astrophysics Data System (ADS)

    He, Zhenjiang; Wang, Zhixing; Chen, Hao; Huang, Zimo; Li, Xinhai; Guo, Huajun; Wang, Renheng

    2015-12-01

    Lithium rich manganese layered oxides (Zr doped Li[Li0.2Mn0.54Ni0.13Co0.13]O2) with porous hollow structure are synthesized by co-precipitation followed by calcination. The morphologies of bare materials and electrodes have been studied through scanning electron microscope (SEM), which illustrates that particles with porous hollow structure combine with conductive carbon more efficiency. Additionally, the porous hollow structure provide a three dimensional space for lithium ion diffusion. Electrochemical impedance spectroscopy (EIS) and Transmission electron microscopy (TEM) have been utilized to gain insight to the properties of pristine and Zr doped materials before and after electrode process. Zr doped Li[Li0.2Mn0.54Ni0.13Co0.13]O2 with porous hollow structure shows better crystal stability and higher diffusion coefficients (D) of the lithium ions diffusing. After 100 cycles at 250 mAg-1, the lattice parameter and crystal structure of Zr doped materials shows smaller changes than pristine's, and the lithium ion diffusion of pristine and Zr doped material decreased from 1.89 × 10-4 and 2.73 × 10-4 mA cm-2 to 3.18 × 10-5 and 1.66 × 10-4 mA cm-2, respectively.

  17. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    DOE PAGES

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-12

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013more » e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.« less

  18. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions.

    PubMed

    Dissanayake, D M N M; Ashraf, A; Dwyer, D; Kisslinger, K; Zhang, L; Pang, Y; Efstathiadis, H; Eisaman, M D

    2016-01-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 10(12) e/cm(2) or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene's properties. Here we demonstrate strong (1.33 × 10(13) e/cm(2)), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 10(13) e/cm(2) when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.

  19. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions.

    PubMed

    Dissanayake, D M N M; Ashraf, A; Dwyer, D; Kisslinger, K; Zhang, L; Pang, Y; Efstathiadis, H; Eisaman, M D

    2016-01-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 10(12) e/cm(2) or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene's properties. Here we demonstrate strong (1.33 × 10(13) e/cm(2)), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 10(13) e/cm(2) when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors. PMID:26867673

  20. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    PubMed Central

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-01-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013 e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors. PMID:26867673

  1. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    NASA Astrophysics Data System (ADS)

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013 e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.

  2. Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory

    SciTech Connect

    Morozova, N. K.; Galstyan, V. G.; Volkov, A. O.; Mashchenko, V. E.

    2015-09-15

    The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10{sup 20} cm{sup –3}. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported.

  3. Metal-doped graphene layers composed with boron nitride-graphene as an insulator: a nano-capacitor.

    PubMed

    Monajjemi, Majid

    2014-11-01

    A model of a nanoscale dielectric capacitor composed of a few dopants has been investigated in this study. This capacitor includes metallic graphene layers which are separated by an insulating medium containing a few h-BN layers. It has been observed that the elements from group IIIA of the periodic table are more suitable as dopants for hetero-structures of the {metallic graphene/hBN/metallic graphene} capacitors compared to those from groups IA or IIA. In this study, we have specifically focused on the dielectric properties of different graphene/h-BN/graphene including their hetero-structure counterparts, i.e., Boron-graphene/h-BN/Boron-graphene, Al-graphene/h-BN/Al-graphene, Mg-graphene/h-BN/Mg-graphene, and Be-graphene/h-BN/Be-graphene stacks for monolayer form of dielectrics. Moreover, we studied the multi dielectric properties of different (h-BN)n/graphene hetero-structures of Boron-graphene/(h-BN)n/Boron-graphene. PMID:25359456

  4. Plasmonic layers based on Au-nanoparticle-doped TiO2 for optoelectronics: structural and optical properties.

    PubMed

    Pedrueza, E; Sancho-Parramon, J; Bosch, S; Valdés, J L; Martinez-Pastor, J P

    2013-02-15

    The anti-reflective effect of dielectric coatings used in silicon solar cells has traditionally been the subject of intensive studies and practical applications. In recent years the interest has permanently grown in plasmonic layers based on metal nanoparticles, which are shown to increase light trapping in the underlying silicon. In the present work we have combined these two concepts by means of in situ synthesis of Au nanoparticles in a dielectric matrix (TiO2), which is commonly used as an anti-reflective coating in silicon solar cells, and added the third element: a 10-20% porosity in the matrix. The porosity is formed by means of a controllable wet etching by low concentration HF. As a consequence, the experimentally measured reflectance of silicon coated by such a plasmonic layer decreases to practically zero in a broad wavelength region around the localized surface plasmon resonance. Furthermore, we demonstrate that extinction and reflectance spectra of silicon coated by the plasmonic films can be successfully accounted for by means of Fresnel formulae, in which a double refractive index of the metal-dielectric material is used. This double refractive index cannot be explained by effective medium theory (Maxwell-Garnett, for example) and appears when the contribution of Au nanoparticles located at the TiO2/Si interface is high enough to result in formation of interface surface plasmon modes.

  5. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    NASA Astrophysics Data System (ADS)

    Rout, G. C.; Sahu, Sivabrata; Panda, S. K.

    2016-04-01

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green's functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green's function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  6. Plasmonic layers based on Au-nanoparticle-doped TiO2 for optoelectronics: structural and optical properties

    NASA Astrophysics Data System (ADS)

    Pedrueza, E.; Sancho-Parramon, J.; Bosch, S.; Valdés, J. L.; Martinez-Pastor, J. P.

    2013-02-01

    The anti-reflective effect of dielectric coatings used in silicon solar cells has traditionally been the subject of intensive studies and practical applications. In recent years the interest has permanently grown in plasmonic layers based on metal nanoparticles, which are shown to increase light trapping in the underlying silicon. In the present work we have combined these two concepts by means of in situ synthesis of Au nanoparticles in a dielectric matrix (TiO2), which is commonly used as an anti-reflective coating in silicon solar cells, and added the third element: a 10-20% porosity in the matrix. The porosity is formed by means of a controllable wet etching by low concentration HF. As a consequence, the experimentally measured reflectance of silicon coated by such a plasmonic layer decreases to practically zero in a broad wavelength region around the localized surface plasmon resonance. Furthermore, we demonstrate that extinction and reflectance spectra of silicon coated by the plasmonic films can be successfully accounted for by means of Fresnel formulae, in which a double refractive index of the metal-dielectric material is used. This double refractive index cannot be explained by effective medium theory (Maxwell-Garnett, for example) and appears when the contribution of Au nanoparticles located at the TiO2/Si interface is high enough to result in formation of interface surface plasmon modes.

  7. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  8. Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

    SciTech Connect

    Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-02

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the deposited AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.

  9. Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

    DOE PAGES

    Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-02

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the depositedmore » AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.« less

  10. Plasmonic three-dimensional transparent conductor based on Al-doped zinc oxide-coated nanostructured glass using atomic layer deposition.

    PubMed

    Malek, Gary A; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-29

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for designing plasmonic 3D transparent conductors. Transformation of the nonconducting 3D structure to a conducting porous surface network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electron-beam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO-coated glass surface along with the in-plane dimensions of the deposited AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to those of untextured two-dimensional AZO-coated glass substrates. In addition, transmittance measurements of the glass samples coated at various AZO thicknesses showed preservation of the transparent nature of each sample, and the AuNPs demonstrated enhanced light scattering as well as light-trapping capabilities.

  11. Quantized Hall Effect and Shubnikov-de Haas Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

    NASA Astrophysics Data System (ADS)

    Cao, Helin; Tian, Jifa; Miotkowski, Ireneusz; Shen, Tian; Hu, Jiuning; Qiao, Shan; Chen, Yong P.

    2012-05-01

    Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass oscillations accompanied by quantized Hall resistances (Rxy) in highly doped n-type Bi2Se3 with bulk carrier concentrations of few 1019cm-3. Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/Rxy is found to scale with the sample thickness, and average ˜e2/h per quintuple layer. We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. In addition to revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.

  12. Quantized Hall effect and Shubnikov-de Haas oscillations in highly doped Bi2Se3: evidence for layered transport of bulk carriers.

    PubMed

    Cao, Helin; Tian, Jifa; Miotkowski, Ireneusz; Shen, Tian; Hu, Jiuning; Qiao, Shan; Chen, Yong P

    2012-05-25

    Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass oscillations accompanied by quantized Hall resistances (R(xy)) in highly doped n-type Bi2Se3 with bulk carrier concentrations of few 10(19) cm(-3). Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/R(xy) is found to scale with the sample thickness, and average ~e(2)/h per quintuple layer. We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. In addition to revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials. PMID:23003290

  13. Performance enhancement of perovskite solar cells with Mg-doped TiO{sub 2} compact film as the hole-blocking layer

    SciTech Connect

    Wang, Jing; Qin, Minchao; Tao, Hong; Ke, Weijun; Chen, Zhao; Wan, Jiawei; Qin, Pingli; Lei, Hongwei; Fang, Guojia; Xiong, Liangbin; Yu, Huaqing

    2015-03-23

    In this letter, we report perovskite solar cells with thin dense Mg-doped TiO{sub 2} as hole-blocking layers (HBLs), which outperform cells using TiO{sub 2} HBLs in several ways: higher open-circuit voltage (V{sub oc}) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO{sub 2} as compared to TiO{sub 2} such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V{sub oc}. In addition, the Mg-modulated TiO{sub 2} with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device.

  14. N-doped graphene layers encapsulated NiFe alloy nanoparticles derived from MOFs with superior electrochemical performance for oxygen evolution reaction

    NASA Astrophysics Data System (ADS)

    Feng, Yi; Yu, Xin-Yao; Paik, Ungyu

    2016-09-01

    Water splitting, an efficient approach for hydrogen production, is often hindered by unfavorable kinetics of oxygen evolution reaction (OER). In order to reduce the overpotential, noble metal oxides-based electrocatalysts like RuO2 and IrO2 are usually utilized. However, due to their scarcity, the development of cost-effective non-precious OER electrocatalysts with high efficiency and good stability is urgently required. Herein, we report a facile one-step annealing of metal-organic frameworks (MOFs) strategy to synthesize N-doped graphene layers encapsulated NiFe alloy nanoparticles (NiFe@C). Through tuning the nanoparticle size and calcination temperature, NiFe@C with an average size of around 16 nm obtained at 700 °C exhibits superior OER performance with an overpotential of only 281 mV at 10 mA cm‑2 and high durability. The facile synthesis method and excellent electrochemical performance show great potential of NiFe@C in replacing the precious metal-based electrocatalysts in the OER.

  15. N-doped graphene layers encapsulated NiFe alloy nanoparticles derived from MOFs with superior electrochemical performance for oxygen evolution reaction

    PubMed Central

    Feng, Yi; Yu, Xin-Yao; Paik, Ungyu

    2016-01-01

    Water splitting, an efficient approach for hydrogen production, is often hindered by unfavorable kinetics of oxygen evolution reaction (OER). In order to reduce the overpotential, noble metal oxides-based electrocatalysts like RuO2 and IrO2 are usually utilized. However, due to their scarcity, the development of cost-effective non-precious OER electrocatalysts with high efficiency and good stability is urgently required. Herein, we report a facile one-step annealing of metal-organic frameworks (MOFs) strategy to synthesize N-doped graphene layers encapsulated NiFe alloy nanoparticles (NiFe@C). Through tuning the nanoparticle size and calcination temperature, NiFe@C with an average size of around 16 nm obtained at 700 °C exhibits superior OER performance with an overpotential of only 281 mV at 10 mA cm−2 and high durability. The facile synthesis method and excellent electrochemical performance show great potential of NiFe@C in replacing the precious metal-based electrocatalysts in the OER. PMID:27658968

  16. Plasmonic three-dimensional transparent conductor based on Al-doped zinc oxide-coated nanostructured glass using atomic layer deposition.

    PubMed

    Malek, Gary A; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-29

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for designing plasmonic 3D transparent conductors. Transformation of the nonconducting 3D structure to a conducting porous surface network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electron-beam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO-coated glass surface along with the in-plane dimensions of the deposited AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to those of untextured two-dimensional AZO-coated glass substrates. In addition, transmittance measurements of the glass samples coated at various AZO thicknesses showed preservation of the transparent nature of each sample, and the AuNPs demonstrated enhanced light scattering as well as light-trapping capabilities. PMID:25835062

  17. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

    SciTech Connect

    Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X.

    2014-04-15

    Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

  18. Synthesis and photoluminescence properties of europium doped Mg-Al layered double hydroxides intercalated with MoO anions

    NASA Astrophysics Data System (ADS)

    Wang, Jun; Pan, Qingrui; Liu, Qi; He, Yang; Mann, Tom; Li, Rumin; Zhang, Milin; Liu, Lianhe

    2012-05-01

    Novel fluorescent Eu-containing layered double hydroxides (Eu-LDHs) were prepared by direct ion-exchange of EuMgAl-NO3 LDHs precursors with MoO anions. The samples were characterized by elemental analyses, powder X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Raman spectra, photoluminescence spectroscopy. The results indicated that Eu3+ ions were likely incorporated into the hydrotalcite lattice and MoO anions were successfully intercalated into interlayer region of the LDHs with the Mo/Al molar ratio close to 0.40. The luminescence properties were largely enhanced compared with the EuMgAl-NO3 LDHs precursors, which were attributed to the energy transfer between Eu3+ and MoO.

  19. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    SciTech Connect

    Hoye, Robert L. Z. E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L. E-mail: jld35@cam.ac.uk; Muñoz-Rojas, David; Nelson, Shelby F.; Illiberi, Andrea; Poodt, Paul

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  20. Structural investigation of oxygen non-stoichiometry and cation doping in misfit-layered thermoelectric (Ca{sub 2}CoO{sub 3-} {sub x} )(CoO{sub 2}) {sub {delta}} , {delta}{approx}1.61

    SciTech Connect

    Ling, Chris D. Aivazian, Karina; Schmid, Siegbert; Jensen, Paul

    2007-04-15

    The chemical and crystallographic natures of oxygen non-stoichiometry and cation doping in the 'misfit-layered' cobaltate [Ca{sub 2}CoO{sub 3-} {sub x} ][CoO{sub 2}] {sub {delta}} , {delta}{approx}1.61, were investigated. Single-phase polycrystalline samples were prepared with the help of a high-energy planetary ball mill, and single crystals grown from a K{sub 2}CO{sub 3}/KCl flux. Polycrystalline undoped, Ti{sup 4+}-doped, and Nd{sup 3+}-doped samples were annealed under both air and under argon in order to modify the oxygen non-stoichiometry. The incommensurately modulated composite crystal structures of undoped and Ti{sup 4+}-doped single crystals were refined against X-ray diffraction data using the superspace group X2/m(0,{delta},0)s0. For the as-made (air-annealed) undoped crystal, 14(2)% oxygen vacancies were found on the disordered O2 site in the central layer of the rock-salt-type subsystem, giving an overall stoichiometry [Ca{sub 2}CoO{sub 2.86}][CoO{sub 2}]{sub 1.61}. For the Ti{sup 4+}-doped crystal this site was found to be almost fully occupied, while Ti{sup 4+}-dopant cations were located on the disordered Co1 site in the central layer of the rock-salt-type subsystem, giving an overall formula [Ca{sub 2}Co{sub 0.74}Ti{sub 0.26}O{sub 2.98}][CoO{sub 2}]{sub 1.61}. In both cases, the average cobalt oxidation state is 3.13+. The single-crystal refinements, thermogravimetric analyses and variations in the lattice parameters of polycrystalline samples refined against synchrotron X-ray diffraction (XRD) data indicate that for both undoped and Ti{sup 4+}-doped samples, substantial numbers of additional oxygen vacancies (15-20%) can be introduced on this site by annealing under an inert atmosphere. Nd{sup 3+}-doped samples have a much lower tolerance (<5%) for oxygen vacancies. - Graphical abstract: The incommensurately modulated composite structure of [Ca{sub 2}CoO{sub 2.86}][CoO{sub 2}]{sub 1.61}.

  1. Layer by layer evaluation of a PCC pavement as it was constructed: Comparison of backcalculated values to lab material values. Research investigation (final)

    SciTech Connect

    Netemeyer, R.; Munsell, S.

    1999-02-01

    This study was conducted to observe the background layer strengths of a pavement structure as each layer was constructed and compare these layer strengths to laboratory tested sample strengths. The objective was carried out by gathering Falling Weight Deflectometer deflection data on each sequential layer. The laboratory samples included bulk samples of the base, shelby tube samples of the subgrade, and concrete core samples from the pavement`s structure. Laboratory tests were performed on these extracted samples to estimate the resilient modulus testing on the base samples was not performed because the backcalculated base results were inconclusive and no comparison could be made.

  2. Bias-illumination stress effect in thin film transistors with a nitrogen low-doped IZO active layer

    NASA Astrophysics Data System (ADS)

    Cheremisin, Alexander B.; Kuznetsov, Sergey N.; Stefanovich, Genrikh B.

    2016-10-01

    The effect of ZnO and IZO moderate nitridation on the performance of thin film transistors (TFTs) has been studied by methods of transfer and capacitance-voltage characteristics, isochronal annealing and computer modeling. Layers of ZnO:N and IZO:N were prepared by reactive sputtering. It is shown that nitridation of the ZnO matrix up to a concentration of 9 at.% results in the deterioration of transistor parameters. However, nitridation of the IZO matrix does not impair a transistor’s static parameters and also provides enhanced performance reproducibility. An additional positive effect is manifested in the electrical stress stability of transistor characteristics at negative bias and positive bias in darkness. Negative bias illumination stress (NBIS) of IZO:N structures also causes TFTs’ degradation similar to that for IGZO devices. However, our observations of the NBIS effect have revealed the following important features. Holes trapped under NBIS could not be neutralized by electrons in the channel in the accumulation regime, thus indicating negligible interaction between positively-charged defects and the conduction band. In addition, trapped holes’ depopulation was performed by thermal activation with an isochronal annealing method. An activation energy of ˜0.8 eV was revealed which is interpreted as the energy level of defects above the valence-band maximum. The specified features do not correlate with the assumption of the key role of oxygen vacancies in NBIS that is extensively presented in literature.

  3. The effect of the dopant nature on the reactivity, interlayer bonding and electronic properties of dual doped bilayer graphene.

    PubMed

    Denis, Pablo A; Iribarne, Federico

    2016-09-21

    Herein, we report on the structural, chemical reactivity and electronic properties of dual-doped bilayer graphene (DDBG). Only one of the layers was doped with a pair of 3p-2p elements. Aluminum was the only dopant which prefers to interact with the undoped layer. The interlayer interaction energies of DDBG are smaller than those determined for bilayer graphene, except for AlN and AlO DDBG. This effect is due to the presence of weak Al-C interlayer bonds. The dopants increase the reactivity of both the doped and undoped layers. Interestingly, we found that hydrogenation is a method that can be used to switch on/off the interlayer bonding, as it controlled the X-C interlayer distance (X = Al, Si, P, S). The magnetic moment of the systems can be adjusted by the position of the 3p dopant. In effect, when X interacts with the doped layer, the magnetic moment is reduced, while it is maintained when X fails to interact. Finally, we found that the doped layer is able to break the symmetry of the undoped sheet and small gaps can be opened in the band structure of the undoped layer. As observed for single doped monolayer graphene, the most effective element for such purposes is P, which opened gaps close to 0.2 eV. For SiN DDBG, the spin filtering properties are enhanced with respect to the monolayered structure. PMID:27545204

  4. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    NASA Astrophysics Data System (ADS)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  5. Super-fast switching of twisted nematic liquid crystals with a single-wall-carbon-nanotube-doped alignment layer

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Lim, Young Jin; Kundu, Sudarshan; Lee, Seung Hee; Lee, Gi-Dong

    2015-03-01

    The application of a single-wall carbon-nanotube (SWCNT) and polyimide (PI) composite thin film on an indium tin-oxide (ITO) glass substrate, working as the command surface in a twisted nematic liquid crystal display (LCD), is described. SWCNTs were chopped and oxidized in a strong acid medium to make them more miscible in a polyimide solution. A film of this newly-developed PISWCNT composite was rubbed to determine the director direction for the LC molecules. The newlyfabricated command surface was examined using a laser beam profiler and atomic force microscopy. Sizes of shortened SWCNTs were characterized by using field-emission scanning electron microscopy (FE-SEM). Finally, small-sized test panels were fabricated from this composite-coated ITO glass, and their electro-optic performances were measured. Although the operating voltage to switch a cell was increased by around 41%, the switching speed was improved remarkably. The rise time of the test cells was found to be improved by around 10.12% and the decay time by around 29.77%. Thus, an overall improvement of around 16.12% in the total switching time was achieved. The change in the surface morphology of the newly-developed composite materials was found to be one of the factors responsible for the faster switching of the device. Detailed discussions are given in this report to explain the faster switching of the newly-developed twisted nematic liquid crystal display (TN-LCD). The device can be useful for practical applications.

  6. Method of making molecularly doped composite polymer material

    DOEpatents

    Affinito, John D [Tucson, AZ; Martin, Peter M [Kennewick, WA; Graff, Gordon L [West Richland, WA; Burrows, Paul E [Kennewick, WA; Gross, Mark E. , Sapochak, Linda S.

    2005-06-21

    A method of making a composite polymer of a molecularly doped polymer. The method includes mixing a liquid polymer precursor with molecular dopant forming a molecularly doped polymer precursor mixture. The molecularly doped polymer precursor mixture is flash evaporated forming a composite vapor. The composite vapor is cryocondensed on a cool substrate forming a composite molecularly doped polymer precursor layer, and the cryocondensed composite molecularly doped polymer precursor layer is cross linked thereby forming a layer of the composite polymer layer of the molecularly doped polymer.

  7. The layered double hydroxide route to Bi-Zn co-doped TiO₂ with high photocatalytic activity under visible light.

    PubMed

    Benalioua, Bahia; Mansour, Meriem; Bentouami, Abdelhadi; Boury, Bruno; Elandaloussi, El Hadj

    2015-05-15

    In this work, a co-doped Bi-Zn-TiO₂ photocatalist is synthesized by an original synthesis route of layered double hydroxide followed by heat treatment at 670 °C. After characterization the photocatalyst efficiency is estimated by the photo-discoloration of an anionic dye (indigo carmine) under visible light and compare to TiO₂-P25 as reference material. In this new photocatalyst, anatase and ZnO wurtzite are the only identified crystalline phase, rutile and Bi₂O₃ being undetected. Moreover, the binding energy of Bi determined (XPS analysis) is different from the one of Bi in Bi₂O₃. Compared to TiO₂-P25, the absorption is red shifted (UV-vis DRS) and the Bi-Zn-TiO₂ photocatalyst showed sorption capacity toward indigo carmine higher than that TiO₂-P25. The kinetics of the photo-discoloration is faster with Bi-Zn-TiO₂ than with TiO₂-P25. Indeed, a complete discoloration is obtained after 70 min and 120 min in the presence of Bi-Zn-TiO₂ and TiO₂-P25 respectively. The identification of the responsible species on photo-discoloration was carried out in the presence of different scavengers. The study showed that the first responsible is h(+) specie with a moderate contribution of superoxide anion radical and a minor contribution of the hydroxyl radical. The material showed high stability after five uses with the same rate of photo-discoloration. PMID:25699677

  8. Structural and magnetotransport properties of the Y doped A-site deficient double layered manganites La1.2-x□0.2YxCa1.6Mn2O7

    NASA Astrophysics Data System (ADS)

    Mahamdioua, N.; Amira, A.; Altintas, S. P.; Varilci, A.; Terzioglu, C.

    2016-08-01

    We present structural, magnetic and electrical properties of the polycrystalline A-site-deficient yttrium doped double layered manganites La1.2-x□0.2YxCa1.6Mn2O7 (x=0.2, 0.3 and 0.4) prepared by a solid state reaction method. The samples crystallize in the tetragonal structure with the space group I4/mmm. Doping with Y decreases the cell parameters and causes a decrease of the metal-insulator transition temperature. The same evolution with doping is also seen for the deduced Curie temperature from susceptibility curves which present a clear paramagnetic-ferromagnetic transition. The significant positive intrinsic magnetoresistance, shown in all samples, reaches 85% at 122 K under 7 T for 0.3 doped sample and can be attributed to the suppression of spin fluctuations via aligning the spins under external magnetic field, while the extrinsic one is attributed to the inter-grain spin-polarized tunneling across the grain boundaries. The simulation of the resistivity curves in the entire temperature range show that the percolation model is suitable to fit our results. The applied magnetic field increases the density of states near the Fermi level, which is in accordance with the observed decrease of resistivity.

  9. Magneto-conductive mechanisms in the La-site doped double-layered La1.4Ca1.6Mn2O7 manganites

    NASA Astrophysics Data System (ADS)

    Mahamdioua, N.; Amira, A.; Boudjadja, Y.; Saoudel, A.; Altintas, S. P.; Varilci, A.; Terzioglu, C.

    2016-11-01

    Magneto-conductive mechanisms and properties of La1.2Re0.2Ca1.6Mn2O7 (Re=La, Pr, Y, Gd and Eu) have been investigated. In the low temperature range, combining residual resistivity, weak localization effect, electron-electron and electron-phonon interactions in a model, fit well the resistivity curves of undoped, Pr-doped and Y-doped samples. The Gd-doped and Eu-doped ones require the introduction of the small polaron metallic conduction. In the high temperature range, 3D-Mott's variable range hopping (3D-VRH) is the best model to fit resistivity of the undoped, Pr-doped and Y-doped samples, while Effros-Shklovskii model (ES-VRH) is the best one for Gd-doped and Eu-doped samples. In the entire temperature range, the percolation model fit well the resistivity. Using 3D-VRH model, the density of state (DOS) decreases with doping by Gd and Eu, whereas mean hopping distance Rh(T) and mean hopping energy Eh(T) increase. This may explain the resistivity increase and the crossover to the ES-VRH model. Values of Rh(T) vary between 1.811 and 1.030 nm, which allow us to suggest 3D-VRH as the best model fitting current results. Eh(T) values range from 0.1157 to 0.2635 eV. The DOS increases as increasing magnetic field while Rh(T) and Eh(T) decrease, which is in agreement with the observed decrease of resistivity.

  10. [Doping and sports].

    PubMed

    Lippi, G; Guidi, G

    1999-09-01

    Doping is widely known as the use of banned substances and practices by athletes in an attempt to improve sporting performances. The term doping likely derives from "dope", an ancient expression referred to a primitive alcoholic drink that was used as a stimulant in South African ceremonial dances; gradually, the term was extended and finally adopted his current significance. There are at least two essential reasons to support the fight against doping: the potential harmful effects on athletes and the depth corruption of the fair competition. An exhaustive list of banned substances and methods has been drawn by the International Olympic Committee and further accepted by other International Sport Authorities and Federations. This list, regularly updated, is basically divided into doping substances (stimulants, narcotic analgesics, anabolic agents, diuretics, peptide and glycoprotein hormones and analogues), doping methods (blood doping, pharmacological, chemical and physical manipulation) and drugs subjected to certain restrictions (alcohol, marijuana, local anesthetics, corticosteroids and beta-blockers). Although there might be some medical conditions, which could legitimate the need of these substances or methods, there is no place for their use in sport. Thus, an athlete's consume of any of these substances or methods will result in disqualification. Aim of the present review is to provide a synthetic description of both the desirable effects and the potentially harmful consequences of the use of some of the major doping substances and methods.

  11. All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO2 on SrTiO3 single crystal

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Takashi; Terabe, Kazuya; Aono, Masakazu

    2013-08-01

    An all-solid-state electric-double-layer transistor (EDLT) with a Gd-doped CeO2 (GDC) oxide ion conductor/SrTiO3 (STO) insulator structure has been developed. At 473 K, the drain current of the EDLT was well controlled, from less than nA order to μA order, by electrostatic carrier doping at the GDC/STO interface due to oxide ion (O2-) migration in the GDC, in contrast to an inactiveness at room temperature. The EDL capacitance at the interface, measured with an ac impedance spectroscopy, was 14 μF cm-2, higher than that reported for a microporous-SiO2 EDLT and comparable to that of an ionic-liquid-gated EDLT.

  12. Effect of sulfur doped TiO2 on photovoltaic properties of dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Seo, Hyunwoong; Nam, Sang-Hun; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu; Boo, Jin-Hyo

    2016-07-01

    In a dye-sensitized solar cell (DSC), a nano-porous semiconductor layer plays an important role in the performance. It determines open-circuit voltage and it affects the dye adsorption capacity and charge transfer, which are closely associated with photocurrent and overall performance. TiO2 is the most proper material for nano-porous layer since the first development of DSCs. This work focuses on the enhancement of TiO2 by doping. Sulfur (S) doping enhances charge transfer and the photoconversion of TiO2. Therefore, the increase in photocurrent and efficiency is expected by S doping. S is doped into TiO2 by hydrolysis method. The amount of S is varied and their photo-responses are verified. The most effective S doped TiO2 is applied to DSCs. Overall performance of DSC is enhanced by the addition of S doped TiO2. Especially, the photocurrent is much increased by the improvement on charge transfer, electron lifetime, and photo-conversion. The photovoltaic properties of DSCs are investigated with various ratios of undoped and S doped TiO2. Finally, a DSC based on undoped and S doped TiO2 ratio of 1:1 has the highest efficiency, better than that of a standard DSC based on undoped TiO2. [Figure not available: see fulltext.

  13. Strain-conserving doping of a pseudomorphic metastable Ge{sub 0.06}Si{sub 0.94} layer on Si(100) by low-dose BF{sub 2}{sup +} implantation

    SciTech Connect

    Im, S.; Eisen, F.; Nicolet, M.; Tanner, M.O.; Wang, K.L.; Theodore, N.D.

    1997-02-01

    A thick (260 nm) pseudomorphic metastable {ital n}-type Ge{sub 0.06}Si{sub 0.94} layer grown by molecular beam epitaxy on an {ital n}-type Si(100) substrate was implanted at room temperature with 70 keV BF{sub 2}{sup +} ions to a dose of 3{times}10{sup 13} cm{sup {minus}2}, so that a p{minus}n junction was formed in the GeSi layers. The samples were subsequently annealed for 10{endash}40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV {sup 4}He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800{degree}C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of {ital p}-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped {ital p}-type GeSi films which is less than unity while the Hall factor of a heavily doped {ital p}-type Si or {ital n}-type GeSi film is close to unity. When annealed at 900{degree}C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s. {copyright} {ital 1997 American Institute of Physics.}

  14. Clarification and mitigation of marked J c decrease at low magnetic fields of BaHfO3-doped SmBaCuO3 thin films deposited on seed layer

    NASA Astrophysics Data System (ADS)

    Watanabe, Yutaro; Ichino, Yusuke; Yoshida, Yutaka; Ichinose, Ataru

    2016-07-01

    In accordance with the results of our previous research, a low-temperature growth (LTG) technique is effective for expanding the lower growth temperature region of c-axis-orientated SmBa2Cu3O y (SmBCO) thin films. However, BaHfO3 (BHO)-doped LTG films show a marked decrease in J c at low magnetic fields compared with conventional PLD films. In this study, we aimed to clarify the mechanism of J c decrease and investigated the thickness dependence of the seed layer on the (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (100) single crystal. The obtained results indicate that J c decreased at low magnetic fields as the thickness of the seed layer increased. It is suggested that flux line kinks produced by flux motion in the seed layer would lead to the depinning of flux lines from BHO nanorods in the upper layer. Thus, we added Y2O3 into the seed layer to trap flux lines in the seed layer. Consequently, we improved J c in the low magnetic field region even in the films prepared by using the LTG technique.

  15. Surface Passivation by Quantum Exclusion Using Multiple Layers

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor)

    2013-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M-1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as "undoped layers"). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation.

  16. Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiNx and SiNx/P catalytic-doped layers

    NASA Astrophysics Data System (ADS)

    Cham Thi, Trinh; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2016-02-01

    We investigate the role of hydrogen (H) in the improvement in the passivation quality of silicon nitride (SiNx) prepared by catalytic chemical vapor deposition (Cat-CVD) and Cat-CVD SiNx/phosphorus (P) Cat-doped layers on crystalline silicon (c-Si) by annealing. Both structures show promising passivation capabilities for c-Si with extremely low surface recombination velocity (SRV) on n-type c-Si. Defect termination by H is evaluated on the basis of defect density (Nd) determined by electron spin resonance (ESR) spectroscopy and interface state density (Dit) calculated by the Terman method. The two parameters are found to be drastically decreased by annealing after SiNx deposition. The calculated average Dit at midgap (Dit-average) is 2.2 × 1011 eV-1 cm-2 for the SiNx/P Cat-doped c-Si sample with a SRV of 2 cm/s, which is equivalent to 3.1 × 1011 eV-1 cm-2 for the SiNx/c-Si sample with a SRV of 5 cm/s after annealing. The results indicate that H atoms play a critical role in the reduction in Dit for SiNx/c-Si and SiNx/P Cat-doped c-Si, resulting in a drastic reduction in SRV by annealing.

  17. Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Lim, Way Foong; Quah, Hock Jin; Lu, Qifeng; Mu, Yifei; Ismail, Wan Azli Wan; Rahim, Bazura Abdul; Esa, Siti Rahmah; Kee, Yeh Yee; Zhao, Ce Zhou; Hassan, Zainuriah; Cheong, Kuan Yew

    2016-03-01

    Effects of rapid thermal annealing at different temperatures (700-900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO2) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO2 lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zrsbnd O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current-time (I-t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO2 signified the potential of the doped ZrO2 as a metal reactive oxide on 4H-SiC substrate.

  18. Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

    NASA Astrophysics Data System (ADS)

    Tanaka, Takeshi; Kaneda, Naoki; Mishima, Tomoyoshi; Kihara, Yuhei; Aoki, Toshichika; Shiojima, Kenji

    2015-04-01

    We studied the roles of lightly doped carbon in a series of n-GaN Schottky diode epitaxial structures on freestanding GaN substrates, and evaluated the effects of the doping on diode performances. A large variation of compensation ratio was observed for carbon doping at (1-2) × 1016 cm-3. A model was proposed to explain this phenomenon, in which a vulnerable balance between donor-type CGa and deep acceptor CN strongly affected the free-carrier generation. Application of Norde plots and reverse biased leakage current in current-voltage measurements suggested provisional optimization for a free-carrier concentration of 8 × 1015 cm-3 to achieve a tradeoff between breakdown voltage and on-resistance of the n-GaN diodes.

  19. Effectiveness of Four Different Final Irrigation Activation Techniques on Smear Layer Removal in Curved Root Canals : A Scanning Electron Microscopy Study

    PubMed Central

    Ahuja, Puneet; Nandini, Suresh; Ballal, Suma; Velmurugan, Natanasabapathy

    2014-01-01

    Objective: The aim of this study was to assess the efficacy of apical negative pressure (ANP), manual dynamic agitation (MDA), passive ultrasonic irrigation (PUI) and needle irrigation (NI) as final irrigation activation techniques for smear layer removal in curved root canals. Materials and Methods: Mesiobuccal root canals of 80 freshly extracted maxillary first molars with curvatures ranging between 25° and 35° were used. A glide path with #08–15 K files was established before cleaning and shaping with Mtwo rotary instruments (VDW, Munich, Germany) up to size 35/0.04 taper. During instrumentation, 1 ml of 2.5% NaOCl was used at each change of file. Samples were divided into 4 equal groups (n=20) according to the final irrigation activation technique: group 1, apical negative pressure (ANP) (EndoVac); group 2, manual dynamic agitation (MDA); group 3, passive ultrasonic irrigation (PUI); and group 4, needle irrigation (NI). Root canals were split longitudinally and subjected to scanning electron microscopy. The presence of smear layer at coronal, middle and apical levels was evaluated by superimposing 300-μm square grid over the obtained photomicrographs using a four-score scale with X1,000 magnification. Results: Amongst all the groups tested, ANP showed the overall best smear layer removal efficacy (p < 0.05). Removal of smear layer was least effective with the NI technique. Conclusion: ANP (EndoVac system) can be used as the final irrigation activation technique for effective smear layer removal in curved root canals. PMID:24910670

  20. Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

    SciTech Connect

    Araújo, D.; Alegre, M. P.; Piñero, J. C.; Fiori, A.; Bustarret, E.; Jomard, F.

    2013-07-22

    To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

  1. Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels

    SciTech Connect

    Mitchell, B.; Dierolf, V.; Lee, D.; Lee, D.; Fujiwara, Y.

    2013-12-09

    Europium doped gallium nitride (GaN:Eu) is a promising candidate as a material for red light emitting diodes. When Mg was co-doped into GaN:Eu, additional incorporation environments were discovered that show high excitation efficiency at room temperature and have been attributed to the coupling of Mg-H complexes to the majority Eu site. Electron beam irradiation, indirect and resonant (direct) laser excitation were found to modify these complexes, indicating that vibrational energy alone can trigger the migration of the H while the presence of additional charges and excess energy controls the type of reconfiguration and the activation of non-radiative decay channels.

  2. Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation

    NASA Astrophysics Data System (ADS)

    Murakumo, Keisuke; Yamaoka, Yuya; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2016-04-01

    We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ∼1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.

  3. Aspects of the SrO-CuO-TiO2 Ternary System Related to the Deposition of SrTiO3 and Copper-Doped SrTiO3 Thin-Film Buffer Layers

    SciTech Connect

    A. Ayala

    2004-12-20

    YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) coated conductors are promising materials for large-scale superconductivity applications. One version of a YBCO coated conductor is based on ion beam assisted deposition (IBAD) of magnesium oxide (MgO) onto polycrystalline metal substrates. SrTiO{sub 3} (STO) is often deposited by physical vapor deposition (PVD) methods as a buffer layer between the YBCO and IBAD MgO due to its chemical stability and lattice mismatch of only {approx}1.5% with YBCO. In this work, some aspects of the stability of STO with respect to copper (Cu) and chemical solution deposition of STO on IBAD MgO templates were examined. Solubility limits of Cu in STO were established by processing Cu-doped STO powders by conventional bulk preparation techniques. The maximum solubility of Cu in STO was {approx}1% as determined by transmission electron microscopy (TEM) and Rietveld refinements of x-ray diffraction (XRD) data. XRD analysis, performed in collaboration with NIST, on powder compositions on the STO/SrCuO{sub 2} tie line did not identify any ternary phases. SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layers were prepared by pulsed laser deposition (PLD) and CSD on IBAD MgO flexible metallic textured tapes. TEM analysis of a {approx}100 nm thick SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layer deposited by PLD showed a smooth Cu-doped STO/MgO interface. A {approx}600 nm thick YBCO film, deposited onto the SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer by PLD, exhibited a T{sub c} of 87 K and critical current density (J{sub c}) of {approx}1 MA/cm{sup 2}. STO and Cu-doped STO thin films by CSD were {approx}30 nm thick. The in plane alignment (FWHM) after deposition of the STO improved by {approx}1{sup o} while it degraded by {approx}2{sup o} with the SrCu{sub 0.05}TiO{sub y} buffer. YBCO was deposited by PLD on the STO and SrCu{sub 0.05}TiO{sub y} buffers. The in plane alignment (FWHM) of the YBCO with the STO buffer layer slightly improved while that of the

  4. Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations

    NASA Astrophysics Data System (ADS)

    Singh, Janpreet; Singh, Gurinder; Kaura, Aman; Tripathi, S. K.

    2016-06-01

    A computational study on stable hexagonal phase of undoped, and Sn- and Pb-doped Ge2Sb2Te5 (GST) phase change materials has been carried out. The electronic structure, lattice dynamics and thermoelectric properties of doped GST have been extensively investigated using ab initio methods with virtual crystal approximation. The hexagonal symmetry of the GST is maintained with the addition of Sn and Pb dopants. The lattice parameters and atomic volume of the Sn-doped GST structure is larger than that of the undoped GST. Electronic band structure calculations show that there is an increase in band gap with the increase in the concentration of Sn (≤4.4 at.%). However, with the addition of a very small amount of Pb, there is a continuous decrease in lattice parameters and band gap values. The calculated energy band structure is then used in combination with the Boltzmann transport equation to calculate the thermoelectric parameters of GST and Sn- and Pb-doped materials. Seebeck coefficient ( S), electronic thermal conductivity ( κ e) and the thermoelectric figure-of-merit ( ZT) have been calculated with the help of BoltzTraP code. It was found that the thermoelectric properties of GST are enhanced with the addition of Sn.

  5. Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption.

    PubMed

    Sim, Dong Min; Kim, Mincheol; Yim, Soonmin; Choi, Min-Jae; Choi, Jaesuk; Yoo, Seunghyup; Jung, Yeon Sik

    2015-12-22

    MoS2 is considered a promising two-dimensional active channel material for future nanoelectronics. However, the development of a facile, reliable, and controllable doping methodology is still critical for extending the applicability of MoS2. Here, we report surface charge transfer doping via thiol-based binding chemistry for modulating the electrical properties of vacancy-containing MoS2 (v-MoS2). Although vacancies present in 2D materials are generally regarded as undesirable components, we show that the electrical properties of MoS2 can be systematically engineered by exploiting the tight binding between the thiol group and sulfur vacancies and by choosing different functional groups. For example, we demonstrate that NH2-containing thiol molecules with lone electron pairs can serve as an n-dopant and achieve a substantial increase of electron density (Δn = 3.7 × 10(12) cm(-2)). On the other hand, fluorine-rich molecules can provide a p-doping effect (Δn = -7.0 × 10(11) cm(-2)) due to its high electronegativity. Moreover, the n- and p-doping effects were systematically evaluated by photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and electrical measurement results. The excellent binding stability of thiol molecules and recovery properties by thermal annealing will enable broader applicability of ultrathin MoS2 to various devices. PMID:26503105

  6. Visible light absorbance enhanced by nitrogen embedded in the surface layer of Mn-doped sodium niobate crystals, detected by ultra violet - visible spectroscopy, x-ray photoelectron spectroscopy, and electric conductivity tests

    NASA Astrophysics Data System (ADS)

    Molak, A.; Pilch, M.

    2016-05-01

    Sodium niobate crystals doped with manganese ions, Na(NbMn)O3, were annealed in a nitrogen N2 flow at 600, 670, and 930 K. It was verified that simultaneous doping with Mn ions and annealing in nitrogen enhanced the photocatalytic features of sodium niobate. The transmission in the ultraviolet-visible range was measured at room temperature. The absorbance edge is in the range from 3.4 to 2.3 eV. The optical band gap Egap = 1.2-1.3 eV was evaluated using the Tauc relation. Crystals annealed at 670 K and 930 K exhibited an additional shift of the absorption edge of ˜20-40 nm toward longer wavelengths. The optical energy gap narrowed as a result of the superimposed effect of Mn and N co-doping. The x-ray photoelectron spectroscopy test showed that N ions incorporated into the surface layer. The valence band consisted of O 2p states hybridized with Nb 4d, Mn 3d, and N 2s states. The disorder detected in the surroundings of Nb and O ions decreased due to annealing. The binding energy of oxygen ions situated within the surface layer was EB ≈ 531 eV. The other contributions were assigned to molecular contamination. The contribution centered at 535.5 eV vanished after annealing at 600 K and 670 K. The contribution centered at 534 eV vanished after annealing at 930 K. The N2 annealing partly removed carbonates from the surfaces of the samples. In the 480-950 K range, the electric conductivity activation energy, Ea = 0.7-1.2 eV, was comparable with the optical Egap. The electric permittivity showed dispersion in the 0.1-800 kHz range that corresponds to the occurrence of defects.

  7. General design memorandum, Gulfport Harbor, Mississippi. Design Memorandum Number 1. Appendix E. Thin-layer disposal. Final report

    SciTech Connect

    Rees, S.I.

    1989-06-01

    This report presents the results of a one year monitoring program of the impacts associated with the thin-layer disposal of 50,000 cubic yards of new work dredged material in Mississippi Sound. The object of thin-layer disposal is two fold: (1) the placement of dredged material in open water in a layer 12 inches thick or less and (2) reduction of short term impacts to the aquatic ecosystem. Results of this monitoring program indicate that: (1) It is possible to control lift-thickness during open water disposal. (2) Recovery of benthos following a December disposal operation begins as early as 6-weeks post disposal abundances within the disposal area are similar to non-disposal areas. (3) Recruitment to the disposal area, following the December disposal, was mediated by adult migration, followed by spring larval settlement.

  8. Electrical conduction behavior of organic light-emitting diodes using fluorinated self-assembled monolayer with molybdenum oxide-doped hole transporting layer.

    PubMed

    Park, Sang-Geon; Mori, Tatsuo

    2015-06-01

    The electrical conductivity behavior of a fluorinated self-assembled monolayer (FSAM) of a molybdenum oxide (MoOx)-doped α-naphthyl diamine derivative (α-NPD) in organic light-emitting diodes (OLEDs) was investigated. The current density of the MoOx-doped α-NPD/FSAM device was proportional to its voltage owing to smooth carrier injection through the FSAM and the high carrier density of its bulk. The temperature-dependent characteristics of this device were investigated. The current density-voltage characteristics at different temperatures were almost the same owing to its very low activation energy. The activation energy of the device was estimated to be 1.056 × 10(-2) [eV] and was very low due to the inelastic electron tunneling of FSAM molecules.

  9. Growth condition dependence of Mg-doped GaN film grown by horizontal atmospheric MOCVD system with three layered laminar flow gas injection

    NASA Astrophysics Data System (ADS)

    Tokunaga, H.; Waki, I.; Yamaguchi, A.; Akutsu, N.; Matsumoto, K.

    1998-06-01

    We developed a novel atmospheric pressure horizontal MOCVD system (SR2000) for the growth of III-nitride film. This system was designed for high-speed gas flow in order to suppress thermal convection and undesirable reactant gas reaction. We have grown Mg-doped GaN films using SR2000. We studied the bis-cyclopentadienyl magnesium (Cp 2Mg) flow rate dependence and growth temperature ( Tg) dependence of Mg-doped GaN. As a result, we have obtained p-type GaN film with hole carrier density of 8×10 17 cm -3 with a mobility of 7.5 cm 2/(V s) at the growth condition with Cp 2Mg flow rate of 0.1 μmol/min at Tg of 1025°C.

  10. Low Reynold's number boundary layers in a disturbed environment. Ph.D. Thesis - August, 1985 - Final Report

    NASA Technical Reports Server (NTRS)

    Paik, D. K.; Reshotko, E.

    1986-01-01

    Studies of flat plate boundary layer development were made in a low speed wind tunnel at turbulence levels from 2%to 7%. Only transitional and turbulent flows were observed in the range 280 Re sub theta 700. The mean turbulent velocity profiles display law-of-the-wall behavior but have negligible wake component. The u' disturbance profiles compare well with those of other experiments, the peak value of u'/u sub tau being about 2.5. The effect of free-stream turbulence level on turbulent skin friction can be nicely correlated with those of other investigations on a plot of u sub e/u sub tau versus Re sub theta. A discussion on the u' spectra for the transitional boundary-layers is presented.

  11. Mixing and non-equilibrium chemical reaction in a compressible mixing layer. M.S. Thesis Final Report

    NASA Technical Reports Server (NTRS)

    Steinberger, Craig J.

    1991-01-01

    The effects of compressibility, chemical reaction exothermicity, and non-equilibrium chemical modeling in a reacting plane mixing layer were investigated by means of two dimensional direct numerical simulations. The chemical reaction was irreversible and second order of the type A + B yields Products + Heat. The general governing fluid equations of a compressible reacting flow field were solved by means of high order finite difference methods. Physical effects were then determined by examining the response of the mixing layer to variation of the relevant non-dimensionalized parameters. The simulations show that increased compressibility generally results in a suppressed mixing, and consequently a reduced chemical reaction conversion rate. Reaction heat release was found to enhance mixing at the initial stages of the layer growth, but had a stabilizing effect at later times. The increased stability manifested itself in the suppression or delay of the formation of large coherent structures within the flow. Calculations were performed for a constant rate chemical kinetics model and an Arrhenius type kinetic prototype. The choice of the model was shown to have an effect on the development of the flow. The Arrhenius model caused a greater temperature increase due to reaction than the constant kinetic model. This had the same effect as increasing the exothermicity of the reaction. Localized flame quenching was also observed when the Zeldovich number was relatively large.

  12. First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity

    NASA Astrophysics Data System (ADS)

    Brumme, Thomas; Calandra, Matteo; Mauri, Francesco

    2015-04-01

    We investigate how field-effect doping affects the structural properties, the electronic structure, and the Hall coefficient of few-layers transition-metal dichalcogenides by using density-functional theory. We consider monolayers, bilayers, and trilayers of the H polytype of MoS2, MoSe2, MoTe2, WS2, and WSe2 and provide a full database of electronic structures and Hall coefficients for hole and electron doping. We find that, for both electron and hole doping, the electronic structure depends on the number of layers and cannot be described by a rigid band shift. Furthermore, it is important to relax the structure under the asymmetric electric field. Interestingly, while the width of the conducting channel depends on the doping, the number of occupied bands at each given k point is almost uncorrelated with the thickness of the doping-charge distribution. Finally, we calculate within the constant-relaxation-time approximation the electrical conductivity and the inverse Hall coefficient. We demonstrate that in some cases the charge determined by Hall-effect measurements can deviate from the real charge by up to 50%. For hole-doped MoTe2 the Hall charge has even the wrong polarity at low temperature. We provide the mapping between the doping charge and the Hall coefficient. We present more than 250 band structures for all doping levels of the transition-metal dichalcogenides considered within this work.

  13. High T(c) electron doped Ca10(Pt3As8)(Fe2As2)5 and Ca10(Pt4As8)(Fe2As2)5 superconductors with skutterudite intermediary layers.

    PubMed

    Ni, Ni; Allred, Jared M; Chan, Benny C; Cava, Robert Joseph

    2011-11-01

    It has been argued that the very high transition temperatures of the highest T(c) cuprate superconductors are facilitated by enhanced CuO(2) plane coupling through heavy metal oxide intermediary layers. Whether enhanced coupling through intermediary layers can also influence T(c) in the new high T(c) iron arsenide superconductors has never been tested due the lack of appropriate systems for study. Here we report the crystal structures and properties of two iron arsenide superconductors, Ca(10)(Pt(3)As(8))(Fe(2)As(2))(5) (the "10-3-8 phase") and Ca(10)(Pt(4)As(8))(Fe(2)As(2))(5) (the "10-4-8 phase"). Based on -Ca-(Pt(n)As(8))-Ca-Fe(2)As(2)- layer stacking, these are very similar compounds for which the most important differences lie in the structural and electronic characteristics of the intermediary platinum arsenide layers. Electron doping through partial substitution of Pt for Fe in the FeAs layers leads to T(c) of 11 K in the 10-3-8 phase and 26 K in the 10-4-8 phase. The often-cited empirical rule in the arsenide superconductor literature relating T(c) to As-Fe-As bond angles does not explain the observed differences in T(c) of the two phases; rather, comparison suggests the presence of stronger FeAs interlayer coupling in the 10-4-8 phase arising from the two-channel interlayer interactions and the metallic nature of its intermediary Pt(4)As(8) layer. The interlayer coupling is thus revealed as important in enhancing T(c) in the iron pnictide superconductors.

  14. Airplane dopes and doping

    NASA Technical Reports Server (NTRS)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  15. Efficient conversion from UV light to near-IR emission in Yb{sup 3+}-doped triple-layered perovskite CaLaNb{sub 3}O{sub 10}

    SciTech Connect

    Lu, Yuting; Li, Yuze; Qin, Lin; Huang, Yanlin; Qin, Chuanxiang; Tsuboi, Taiju; Huang, Wei

    2015-04-15

    Graphical abstract: CaRNb{sub 3}O{sub 10} is a self-activated oxide due to charge transfer transition in octahedral NbO{sub 6} groups. CaLaNb{sub 3}O{sub 10}:Yb{sup 3+} presents intense IR emission due to the cooperative energy transfer from host (NbO{sub 6}) to Yb{sup 3+} is responsible. It could be expected to be potentially applicable for enhancing photovoltaic conversion efficiency of Si-based solar cells. - Abstract: Yb{sup 3+}-doped triple-layered perovskite CaLaNb{sub 3}O{sub 10} micro-particles were synthesized via the solid-state reaction method. The crystal structure and morphology of the polycrystalline samples were investigated by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM) measurements, respectively. The reflectance spectra, photoluminescence (PL) excitation and emission spectra, the decay curves, and the absolute quantum efficiency (QE) of the near-infrared (NIR) emission (910–1100 nm) were measured. Under excitation of UV light, Yb{sup 3+}-doped perovskite shows an intense NIR emission attributed to the {sup 2}F{sub 5/2} → {sup 2}F{sub 7/2} transitions of Yb{sup 3+} ions, which could match maximum spectral response of a Si-based solar cell. This is beneficial for its possible application in an enhancement of the photovoltaic conversion efficiency of solar energy utilization. The efficient energy transfer in Yb{sup 3+}-doped CaLaNb{sub 3}O{sub 10} from NbO{sub 6} groups into Yb{sup 3+} ions was confirmed by the spectra and fluorescent decay measurements. Cooperative energy transfer (CET) was supposed to be the NIR emission mechanism.

  16. Scaling and modeling of three-dimensional, end-wall, turbulent boundary layers. Ph.D. Thesis - Final Report

    NASA Technical Reports Server (NTRS)

    Goldberg, U. C.; Reshotko, E.

    1984-01-01

    The method of matched asymptotic expansion was employed to identify the various subregions in three dimensional, turbomachinery end wall turbulent boundary layers, and to determine the proper scaling of these regions. The two parts of the b.l. investigated are the 3D pressure driven part over the endwall, and the 3D part located at the blade/end wall juncture. Models are proposed for the 3d law of the wall and law of the wake. These models and the data of van den Berg and Elsenaar and of Mueller are compared and show good agreement between models and experiments.

  17. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  18. Biomass-Derived Nitrogen-Doped Carbon Nanofiber Network: A Facile Template for Decoration of Ultrathin Nickel-Cobalt Layered Double Hydroxide Nanosheets as High-Performance Asymmetric Supercapacitor Electrode.

    PubMed

    Lai, Feili; Miao, Yue-E; Zuo, Lizeng; Lu, Hengyi; Huang, Yunpeng; Liu, Tianxi

    2016-06-01

    The development of biomass-based energy storage devices is an emerging trend to reduce the ever-increasing consumption of non-renewable resources. Here, nitrogen-doped carbonized bacterial cellulose (CBC-N) nanofibers are obtained by one-step carbonization of polyaniline coated bacterial cellulose (BC) nanofibers, which not only display excellent capacitive performance as the supercapacitor electrode, but also act as 3D bio-template for further deposition of ultrathin nickel-cobalt layered double hydroxide (Ni-Co LDH) nanosheets. The as-obtained CBC-N@LDH composite electrodes exhibit significantly enhanced specific capacitance (1949.5 F g(-1) at a discharge current density of 1 A g(-1) , based on active materials), high capacitance retention of 54.7% even at a high discharge current density of 10 A g(-1) and excellent cycling stability of 74.4% retention after 5000 cycles. Furthermore, asymmetric supercapacitors (ASCs) are constructed using CBC-N@LDH composites as positive electrode materials and CBC-N nanofibers as negative electrode materials. By virtue of the intrinsic pseudocapacitive characteristics of CBC-N@LDH composites and 3D nitrogen-doped carbon nanofiber networks, the developed ASC exhibits high energy density of 36.3 Wh kg(-1) at the power density of 800.2 W kg(-1) . Therefore, this work presents a novel protocol for the large-scale production of biomass-derived high-performance electrode materials in practical supercapacitor applications. PMID:27135301

  19. Effect of a ga-doped ZnO thin film with a ZTO buffer layer fabricated by using pulsed DC magnetron sputter for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Song, Sang-Woo; Lee, Kyung-Ju; Roh, Ji-Hyung; Park, On-Jeon; Kim, Hwan-Sun; Moon, Byung-Moo; Ji, Min-Woo

    2014-08-01

    The electrical property of a Ga-doped ZnO(GZO) thin film is well known to be similar that of commercialized fluorine-doped tin oxide(FTO). However GZO is limited for use at high process temperatures for solar cells because of its unstable resistivity at temperatures above 300 °C. A GZO thin film compared to zinc tin oxide(ZTO)-GZO multilayer can be used at high process temperatures. A GZO thin film was deposited on glass by using pulsed DC magnetron sputter. Then, a ZTO buffer layer was deposited on the GZO surface. During the deposition, the working pressure was 5 mTorr (Z-1 glass) and 1 mTorr (Z-2 glass). Dye-sensitized solar cells (DSSCs) were fabricated using Z-1, Z-2 and commercialized FTO glasses. Z-2 showed a conversion efficiency of 4.265%, which was enhanced by 0.399% compared to that of the DSSCs using FTO(3.784%). The conversion efficiency for Z-1 (3.889%) was a little higher than that of FTO. Thus, the ZTO-GZO electrode showed better characteristics than those obtained using the FTO electrode, which can be attributed to the reduced charge recombination and series resistance.

  20. Ion-beam-spurted dimethyl-sulfate-doped PEDOT:PSS composite-layer-aligning liquid crystal with low residual direct-current voltage

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Lee, Ju Hwan; Seo, Dae-Shik; Li, Xiang-Dan

    2016-09-01

    Thin ion-beam (IB)-spurted dimethyl sulfate/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (DMS/PEDOT:PSS) layers with improved electro-optic performance are presented for aligning liquid crystals. IB spurting is effective for enhancing the conductivity of such layers, as well as the anchoring energy of the liquid crystals sandwiched between them. Compared with a commercial twisted-nematic cell assembled with polyimide alignment layers, the same cell assembled with 3.0-keV IB-spurted DMS/PEDOT:PSS alignment layers shows a 38% faster switching and a 93% lower residual direct current. The improved electro-optic performance here is likely due to the enhanced electric field effect and the charge-releasing ability of thin IB-spurted DMS/PEDOT:PSS layers.

  1. Undoped TiO{sub 2} and nitrogen-doped TiO{sub 2} thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

    SciTech Connect

    Tian, Liang Soum-Glaude, Adurey; Volpi, Fabien; Salvo, Luc; Berthomé, Grégory; Coindeau, Stéphane; Mantoux, Arnaud; Boichot, Raphaël; Lay, Sabine; Brizé, Virginie; Blanquet, Elisabeth; Giusti, Gaël; Bellet, Daniel

    2015-01-15

    Undoped and nitrogen doped TiO{sub 2} thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 °C and nitrogen incorporation was achieved by using titanium isopropoxide, NH{sub 3} and/or N{sub 2}O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Ω cm (+/−10 Ω cm) combined with an average total transmittance of 60% in the 400–1000 nm wavelength range. Eventually, TiO{sub 2} thin films were deposited on the 3D metallic foam template.

  2. First-principles computational studies of alkali-doped C60 fullerides. Final technical report, 1 Jan 91-1 Jan 92

    SciTech Connect

    Erwin, S.C.

    1992-04-06

    Researchers at AT and T Bell Laboratories reported the discovery of superconductivity at 18 K in a potassium-doped fullerene solid, KxC60. This marked a major turning point in the young history of the C60 molecule 'buckminsterfullerene': from a hypothetical molecular (1985), to small-scale (mg) production of crystalline powders (1988), to large-scale synthesis (1990), to a material with the highest transition temperature of any molecular superconductor. This history represents only one of many research lines. Concurrently with the work at AT and T on partial doping, researchers at the Laboratory for Research on the Structure of Matter at the University of Pennsylvania were doping solid C60 to saturation with potassium. The resulting pure phase, K6C60, was characterized by x-ray diffraction in April 1991: the lattice was body-centered cubic, with the C60 molecules essentially undistorted, orientationally ordered, and each surrounded by a cage of 24 K atoms. Nothing was known about the electronic structure at this early stage.

  3. Finalizing the CCSDS Space-Data Link Layer Security Protocol: Setup and Execution of the Interoperability Testing

    NASA Technical Reports Server (NTRS)

    Fischer, Daniel; Aguilar-Sanchez, Ignacio; Saba, Bruno; Moury, Gilles; Biggerstaff, Craig; Bailey, Brandon; Weiss, Howard; Pilgram, Martin; Richter, Dorothea

    2015-01-01

    The protection of data transmitted over the space-link is an issue of growing importance also for civilian space missions. Through the Consultative Committee for Space Data Systems (CCSDS), space agencies have reacted to this need by specifying the Space Data-Link Layer Security (SDLS) protocol which provides confidentiality and integrity services for the CCSDS Telemetry (TM), Telecommand (TC) and Advanced Orbiting Services (AOS) space data-link protocols. This paper describes the approach of the CCSDS SDLS working group to specify and execute the necessary interoperability tests. It first details the individual SDLS implementations that have been produced by ESA, NASA, and CNES and then the overall architecture that allows the interoperability tests between them. The paper reports on the results of the interoperability tests and identifies relevant aspects for the evolution of the test environment.

  4. Bioinspired synthesis of nitrogen/sulfur co-doped graphene as an efficient electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhang, Huanhuan; Liu, Xiangqian; He, Guangli; Zhang, Xiaoxing; Bao, Shujuan; Hu, Weihua

    2015-04-01

    Efficient electrocatalyst of oxygen reduction reaction (ORR) is crucial for a variety of renewable energy applications and heteroatom-doped carbon materials have demonstrated promising catalytic performance towards ORR. In this paper we report a bioinspired method to synthesize nitrogen/sulfur (N/S) co-doped graphene as an efficient ORR electrocatalyst via self-polymerization of polydopamine (PDA) thin layer on graphene oxide sheets, followed by reacting with cysteine and finally thermal annealing in Argon (Ar) atmosphere. As-prepared N/S co-doped graphene exhibits significantly enhanced ORR catalytic activity in alkaline solution compared with pristine graphene or N-doped graphene. It also displays long-term operation stability and strong tolerance to methanol poison effect, indicating it a promising ORR electrocatalyst.

  5. Nitrogen doping in carbon nanotubes.

    PubMed

    Ewels, C P; Glerup, M

    2005-09-01

    Nitrogen doping of single and multi-walled carbon nanotubes is of great interest both fundamentally, to explore the effect of dopants on quasi-1D electrical conductors, and for applications such as field emission tips, lithium storage, composites and nanoelectronic devices. We present an extensive review of the current state of the art in nitrogen doping of carbon nanotubes, including synthesis techniques, and comparison with nitrogen doped carbon thin films and azofullerenes. Nitrogen doping significantly alters nanotube morphology, leading to compartmentalised 'bamboo' nanotube structures. We review spectroscopic studies of nitrogen dopants using techniques such as X-ray photoemission spectroscopy, electron energy loss spectroscopy and Raman studies, and associated theoretical models. We discuss the role of nanotube curvature and chirality (notably whether the nanotubes are metallic or semiconducting), and the effect of doping on nanotube surface chemistry. Finally we review the effect of nitrogen on the transport properties of carbon nanotubes, notably its ability to induce negative differential resistance in semiconducting tubes.

  6. The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE

    NASA Astrophysics Data System (ADS)

    Prakash, Nisha; Anand, Kritika; Barvat, Arun; Pal, Prabir; Singh, Dilip K.; Jewariya, Mukesh; Ragam, Srinivasa; Adhikari, Sonachand; Maurya, Kamlesh K.; Khanna, Suraj P.

    2016-04-01

    In this work, unintentionally doped GaN samples were prepared on GaN template by radio frequency (RF)-plasma MBE technique using two different RF-plasma powers. Photoluminescence (PL), steady state photoconductivity (PC) and ultrafast optical pump-probe spectroscopy measurements have been carried out to characterize the samples. The effect of RF-plasma power towards unintentional doping and giving rise to yellow luminescence (YL) is discussed. Our PC measurements show relatively faster decay for sample grown with higher RF-plasma power. In addition, the ultrafast optical pump-probe spectroscopy results show the presence of various defect levels with different relaxation times. A faster ultrafast relaxation time from the conduction band to the closest defect level and conduction band to the next defect level was observed for the sample grown with higher plasma power. A comparatively low defect density and faster carrier relaxation observed in higher RF-plasma power grown samples is caused by lower impurities and gallium vacancies. The results imply that RF-plasma power is very important parameter for the growth of epitaxial GaN films and undesirable impurities and gallium vacancies might get incorporated in the epitaxial GaN films.

  7. Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-07-01

    With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

  8. Denitrification in nonhomogeneous laboratory-scale aquifers: 4. Hydraulics, nitrogen chemistry, and microbiology in a single layer. Final report

    SciTech Connect

    Lindstrom, F.T.; Boersma, L.; Myrold, D.; Barlaz, M.

    1991-04-01

    A two-dimensional mathematical model for simulating the transport and fate of organic chemicals in a laboratory scale, single layer aquifer is presented. The aquifer can be nonhomogeneous and anisotropic with respect to its fluid flow properties. The physical model has open inlet and outlet ends and is bounded by impermeable walls on all sides. Fully penetrating injection and/or extraction wells can be placed anywhere in the flow field. The inlet and outlet boundaries have user prescribed hydraulic pressure fields. The steady state hydraulic pressure field is obtained first by using the two-dimensional Darcy flow law and the continuity equation. The chemical transport and fate equation is then solved in terms of user stipulated initial and boundary conditions. The model accounts for the major physical processes of storage, dispersion, and advection, and also can account for linear equilibrium sorption, first-order loss processes, microbial denitrification, irreversible sorption and/or dissolution into the organic phase, metabolism in the sorbed state, and first order loss in the sorbed state.

  9. Pd/Ni-WO3 anodic double layer gasochromic device

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Pitts, J. Roland; Liu, Ping

    2004-04-20

    An anodic double layer gasochromic sensor structure for optical detection of hydrogen in improved response time and with improved optical absorption real time constants, comprising: a glass substrate; a tungsten-doped nickel oxide layer coated on the glass substrate; and a palladium layer coated on the tungsten-doped nickel oxide layer.

  10. Ultrabroad Photoluminescence and Electroluminescence at New Wavelengths from Doped Organometal Halide Perovskites.

    PubMed

    Zhou, Yang; Yong, Zi-Jun; Zhang, Kai-Cheng; Liu, Bo-Mei; Wang, Zhao-Wei; Hou, Jing-Shan; Fang, Yong-Zheng; Zhou, Yi; Sun, Hong-Tao; Song, Bo

    2016-07-21

    Doping of semiconductors by introducing foreign atoms enables their widespread applications in microelectronics and optoelectronics. We show that this strategy can be applied to direct bandgap lead-halide perovskites, leading to the realization of ultrawide photoluminescence (PL) at new wavelengths enabled by doping bismuth (Bi) into lead-halide perovskites. Structural and photophysical characterization reveals that the PL stems from one class of Bi doping-induced optically active center, which is attributed to distorted [PbI6] units coupled with spatially localized bipolarons. Additionally, we find that compositional engineering of these semiconductors can be employed as an additional way to rationally tune the PL properties of doped perovskites. Finally, we accomplished the electroluminescence at cryogenic temperatures by using this system as an emissive layer, marking the first electrically driven devices using Bi-doped photonic materials. Our results suggest that low-cost, earth-abundant, solution-processable Bi-doped perovskite semiconductors could be promising candidate materials for developing optical sources operating at new wavelengths. PMID:27377481

  11. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    SciTech Connect

    Chen, Dazheng; Zhang, Chunfu Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-06-16

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  12. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    NASA Astrophysics Data System (ADS)

    Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-06-01

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  13. Significant improvement in performances of LiNi0.5Mn1.5O4 through surface modification with high ordered Al-doped ZnO electro-conductive layer

    NASA Astrophysics Data System (ADS)

    Sun, Hongdan; Xia, Bingbo; Liu, Weiwei; Fang, Guoqing; Wu, Jingjing; Wang, Haibo; Zhang, Ruixue; Kaneko, Shingo; Zheng, Junwei; Wang, Hongyu; Li, Decheng

    2015-03-01

    Al-doped ZnO (AZO)-coated LiNi0.5Mn1.5O4 (LNMO) was prepared by sol-gel method. Transmission electron microscopy (TEM) analysis indicates that AZO layer grown on the surface of LNMO is high ordered. The results of electrochemical performance measurements reveal that the AZO-coated LNMO electrode displays the best rate capability compared with the bare LNMO and ZnO-coated LNMO, even at a high rate of 10 C. The discharge capacity of the AZO-coated LNMO electrode can still reach 114.3 mAh g-1, about 89% of its discharge capacity at 0.1 C. Moreover, AZO-coated LNMO electrode shows a remarkable improvement in the cyclic performance at a high rate at elevated temperature due to the protective effect of AZO coating layer. The electrode delivers a capacity of 120.3 mAh g-1 with the capacity retention of 95% at 5 C in 50 cycles at 50 °C. The analysis of electrochemical impedance spectra (EIS) indicates that AZO-coated LNMO possesses the lowest charge transfer resistance compared to the bare LNMO and ZnO-coated LNMO, which may be responsible for improved rate capability.

  14. Defects and stresses in MBE-grown GaN and Al{sub 0.3}Ga{sub 0.7}N layers doped by silicon using silane

    SciTech Connect

    Ratnikov, V. V. Kyutt, R. N.; Smirnov, A. N.; Davydov, V. Yu.; Shcheglov, M. P.; Malin, T. V.; Zhuravlev, K. S.

    2013-12-15

    The electric and structural characteristics of silicon-doped GaN and Al{sub 0.3}Ga{sub 0.7}N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 10{sup 20} cm{sup −3} with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al{sub 0.3}Ga{sub 0.7}N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 10{sup 19} cm{sup −3}. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al{sub 0.3}Ga{sub 0.7}N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed.

  15. Tc Enhancement in Electron-Doped Cuprate Heterostructures

    NASA Astrophysics Data System (ADS)

    Bach, P. L.; Jin, K.; Zhang, X. H.; Greene, R. L.; Grupel, U.; Zohar, E.; Diamant, E.; Dagan, Y.; Smadici, S.; Abbamonte, P.

    2011-03-01

    Multilayer thin films of La 2-x Ce x Cu O4 (LCCO) and Pr 2-x Ce x Cu O4 (PCCO) were fabricated as superlattices of different dopings. Pairing over-doped and under-doped (or un-doped) layers is found to increase Tc significantly above that of the single-phase films corresponding to the under- or over-doped layers. We report transport measurements on these mulitlayer films and discuss possible mechanisms for the Tc enhancement. This work was supported by the US-Israel Binational Science Foundation Grant #2006385 and the Center for Nanophysics and Advanced Materials (CNAM).

  16. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  17. The influence of MoO{sub x} gap states on hole injection from aluminum doped zinc oxide with nanoscale MoO{sub x} surface layer anodes for organic light emitting diodes

    SciTech Connect

    Jha, Jitendra Kumar; Santos-Ortiz, Reinaldo; Du, Jincheng; Shepherd, Nigel D.

    2015-08-14

    The effective workfunction of Al doped ZnO films (AZO) increased from 4.1 eV to 5.55 eV after surface modification with nanoscale molybdenum sub-oxides (MoO{sub x}). Hole only devices with anodes consisting of 3 nm of MoO{sub x} on AZO exhibited a lower turn-on voltage (1.5 vs 1.8 V), and larger charge injection (190 vs 118 mA/cm{sup 2}) at the reference voltage, compared to indium tin oxide (ITO). AZO devices with 10 nm of MoO{sub x} exhibited the highest workfunction but performed poorly compared to devices with 3 nm of MoO{sub x}, or standard ITO. Ultraviolet photoelectron, X-ray photoelectron, and optical spectroscopies indicate that the 3 nm MoO{sub x} films are more reduced and farther away from MoO{sub 3} stoichiometry than their 10 nm equivalents. The vacancies associated with non-stoichiometry result in donor-like gap states which we assign to partially occupied Mo 4d levels. We propose that Fowler-Nordheim tunneling from these levels is responsible for the reduction in threshold voltage measured in devices with 3 nm of MoO{sub x}. A schematic band diagram is proposed. The thicker MoO{sub x} layers are more stoichiometric and resistive, and the voltage drop across these layers dominates their electrical performance, leading to an increase in threshold voltage. The results indicate that AZO with MoO{sub x} layers of optimal thickness may be potential candidates for anode use in organic light emitting diodes.

  18. Pulsed laser deposition of rare-earth-doped glasses: a step toward lightwave circuits

    NASA Astrophysics Data System (ADS)

    Morea, R.; Fernandez, J.; Balda, R.; Gonzalo, J.

    2016-02-01

    Pulsed Laser Deposition (PLD) is used to produce Er-doped lead-niobium germanate (PbO-Nb2O5-GeO2) and fluorotellurite (TeO2-ZnO-ZnF2) thin film glasses. Films having high refractive index, low absorption and large transmission are obtained in a narrow processing window that depends on the actual PLD configuration (O2 pressure ˜a few Pa, Laser energy density ˜2-3 J cm-2 for the results presented in this work). However, Er-doped thin film glasses synthetized at room temperature using these experimental parameters show poor photoluminescence (PL) performance due to non-radiative decay channels, such as a large OH- concentration. Thermal annealing allows improving PL intensity and lifetime (τPL), the latter becoming close to that of the parent Er-doped bulk glass. In addition, the use of alternate PLD from host glass and rare-earth targets allows the synthesis of nanostructured thin film glasses with a controlled rare-earth concentration and in-depth distribution, as it is illustrated for Er-doped PbO-Nb2O5-GeO2 film glasses. In this case, PL intensity at 1.53 μm increases with the spacing between Er-doped layers to reach a maximum for a separation between Er-doped layers >= 5 nm, while τPL is close to the bulk value independently of the spacing. Finally, the comparison of these results with those obtained for films grown by standard PLD from Er-doped glass targets suggests that nanostructuration allows reducing rare-earth clustering and concentration quenching effects.

  19. Wideband saturable absorption in few-layer molybdenum diselenide (MoSe₂) for Q-switching Yb-, Er- and Tm-doped fiber lasers.

    PubMed

    Woodward, R I; Howe, R C T; Runcorn, T H; Hu, G; Torrisi, F; Kelleher, E J R; Hasan, T

    2015-07-27

    We fabricate a free-standing molybdenum diselenide (MoSe2) saturable absorber by embedding liquid-phase exfoliated few-layer MoSe2 flakes into a polymer film. The MoSe2-polymer composite is used to Q-switch fiber lasers based on ytterbium (Yb), erbium (Er) and thulium (Tm) gain fiber, producing trains of microsecond-duration pulses with kilohertz repetition rates at 1060 nm, 1566 nm and 1924 nm, respectively. Such operating wavelengths correspond to sub-bandgap saturable absorption in MoSe2, which is explained in the context of edge-states, building upon studies of other semiconducting transition metal dichalcogenide (TMD)-based saturable absorbers. Our work adds few-layer MoSe2 to the growing catalog of TMDs with remarkable optical properties, which offer new opportunities for photonic devices. PMID:26367663

  20. Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction Al{sub x}Ga{sub 1–x}N multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Chichibu, S. F. Ishikawa, Y.; Furusawa, K.; Miyake, H.; Hiramatsu, K.

    2015-09-21

    Appropriate-amount Si-doping in the well layers significantly improved the luminescence efficiency of Al{sub 0.68}Ga{sub 0.32}N/Al{sub 0.77}Ga{sub 0.23}N multiple quantum wells. To understand the mechanisms, spatio-time-resolved cathodoluminescence measurements and self-consistent Schrödinger-Poisson calculations were carried out. The increase in the luminescence lifetime at room temperature, which reflects the decrease in the concentration of nonradiative recombination centers (NRCs), was correlated with increased terrace width of Si-doped wells. The results suggest the importance of H{sub 3}SiNH{sub 2} doping-reactant formation that gives rise to enhanced decomposition of NH{sub 3} and provides wetting conditions by surface Si-N bonds, which reduce the total energy and concentration of NRCs composed of cation vacancies.

  1. Layered hydride CaNiGeH with a ZrCuSiAs-type structure: crystal structure, chemical bonding, and magnetism induced by Mn doping.

    PubMed

    Liu, Xiaofeng; Matsuishi, Satoru; Fujitsu, Satoru; Ishigaki, Toru; Kamiyama, Takashi; Hosono, Hideo

    2012-07-18

    Stimulated by the discovery of the iron oxypnictide superconductor with ZrCuSiAs-type structure in 2008, extensive exploration of its isostructural and isoelectronic compounds has started. These compounds, including oxides, fluorides, and hydrides, can all be simply recognized as valence compounds for which the octet rule is valid. We report herein the first example of a ZrCuSiAs-type hydride, CaNiGeH, which violates the octet rule. This hydride was synthesized by hydrogenation of the CeFeSi-type compound CaNiGe under pressurized hydrogen. Powder diffraction and theoretical simulation confirm that H enters into the interstitial position of the Ca(4) tetrahedron, leading to notable anisotropic expansion of the unit cell along the c axis. Density functional theory calculations indicate the modification of the chemical bonding and formation of ionic Ca-H bond as a result of hydrogen insertion. Furthermore, CaNiGeH shows Pauli paramagnetism and metallic conduction similar to that of CaNiGe, but its carrier type changes to hole and the carrier density is drastically reduced as compared to CaNiGe. Mn-doping at the Ni site introduces magnetism to both the parent compound and the hydride. The measurement demonstrates that hydrogenation of CaNi(1-x)Mn(x)Ge reduces ferromagnetic ordering of Mn ions and induces huge magnetic hysteresis, whereas the spin glass state observed for the parent compound is preserved in the hydride. The hydrogenation-induced changes in the electric and magnetic properties are interpreted in terms of development of two-dimensionality in crystal structure as well as electronic state.

  2. Highly conducting and preferred <220> oriented boron doped nc-Si films for window layers in nc-Si solar cells

    NASA Astrophysics Data System (ADS)

    Mondal, Praloy; Das, Debajyoti

    2016-05-01

    Growth and optimization of the boron dopednanocrystalline silicon (nc-Si) films have been studied by varyingthe gaspressure applied to the hydrogendiluted silane plasma in RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) system, using diborane (B2H6) as the dopant gas. High magnitudeof electrical conductivity (~102 S cm-1) and<220>orientedcrystallographic lattice planes have been obtained with high crystalline volume fraction (~86 %) at an optimum pressure of 2.5 Torr. XRD and Raman studies reveal good crystallinity with preferred orientation, suitable for applications in stacked layer devices, particularly in nc-Si solar cells.

  3. Quasiparticle excitations of adsorbates on doped graphene

    NASA Astrophysics Data System (ADS)

    Lischner, Johannes; Wickenburg, Sebastian; Wong, Dillon; Karrasch, Christoph; Wang, Yang; Lu, Jiong; Omrani, Arash A.; Brar, Victor; Tsai, Hsin-Zon; Wu, Qiong; Corsetti, Fabiano; Mostofi, Arash; Kawakami, Roland K.; Moore, Joel; Zettl, Alex; Louie, Steven G.; Crommie, Mike

    Adsorbed atoms and molecules can modify the electronic structure of graphene, but in turn it is also possible to control the properties of adsorbates via the graphene substrate. In my talk, I will discuss the electronic structure of F4-TCNQ molecules on doped graphene and present a first-principles based theory of quasiparticle excitations that captures the interplay of doping-dependent image charge interactions between substrate and adsorbate and electron-electron interaction effects on the molecule. The resulting doping-dependent quasiparticle energies will be compared to experimental scanning tunnelling spectra. Finally, I will also discuss the effects of charged adsorbates on the electronic structure of doped graphene.

  4. Cr-rich layer at the WC/Co interface in Cr-doped WC Co cermets: segregation or metastable carbide?

    NASA Astrophysics Data System (ADS)

    Delanoë, A.; Bacia, M.; Pauty, E.; Lay, S.; Allibert, C. H.

    2004-09-01

    The effect of Cr on the microstructure of WC-Co alloys after liquid-phase sintering is studied as a function of the C content of the alloy and for two Cr for Co substitution ratio. The distribution of Cr is investigated using X-ray energy dispersive spectrometry. A Cr enrichment at WC/Co interfaces is detected for both C- and W-rich alloys. The observations by high-resolution electron microscopy point out a thin face centred cubic layer at the interface between WC and Co. This layer has grown epitaxially on the surface of the WC grains with two orientation relationships depending on the WC plane. The lattice parameter mismatch is close to 0.2% for the basal plane and less than 3% for the prismatic plane of WC. The composition and crystal structure of this compound correspond to the metastable (Cr,W)C phase that is stabilized by the low energy of the WC/(Cr,W)C interface.

  5. Temperature synchronized molecular layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kurabayashi, T.; Nishizawa, J.

    1994-12-01

    This paper reports the first results on a modified molecular layer epitaxy (MLE) technique to deposit epitaxial GaAs films by changing the substrate temperature for alternate TEG (or TMG) and AsH 3 injection. This method of temperature synchronized molecular layer epitaxy (TSMLE) is a new concept for MLE and atomic layer epitaxy (ALE). The growth rates and the doping phenomena showed different characteristics to the conventional methods which were performed at a constant temperature. This method was effective not only for the study of monolayer growth, but also for device application, especially for the heavily doped p-type layer of which carrier concentration is 10 20 cm -3 order. Carbon doped p-type layer was achieved by TMG-AsH 3 TSMLE. The carbon concentration increased by decreasing the temperature during AsH 3 injection and by increasing the temperature during TMG injection. Zn-doped layer was achieved by TEG-AsH 3 TSMLE using DEZn as a dopant gas for p-type layer fabrication. To doped heavily, DEZn injected after AsH 3 injection and the temperature during AsH 3 injection had a suitable value at 393°C.

  6. Gene doping.

    PubMed

    Harridge, Stephen D R; Velloso, Cristiana P

    2008-01-01

    Gene doping is the misuse of gene therapy to enhance athletic performance. It has recently been recognised as a potential threat and subsequently been prohibited by the World Anti-Doping Agency. Despite concerns with safety and efficacy of gene therapy, the technology is progressing steadily. Many of the genes/proteins which are involved in determining key components of athletic performance have been identified. Naturally occurring mutations in humans as well as gene-transfer experiments in adult animals have shown that altered expression of these genes does indeed affect physical performance. For athletes, however, the gains in performance must be weighed against the health risks associated with the gene-transfer process, whereas the detection of such practices will provide new challenges for the anti-doping authorities.

  7. Strongly Coupled Ternary Hybrid Aerogels of N-deficient Porous Graphitic-C3N4 Nanosheets/N-Doped Graphene/NiFe-Layered Double Hydroxide for Solar-Driven Photoelectrochemical Water Oxidation.

    PubMed

    Hou, Yang; Wen, Zhenhai; Cui, Shumao; Feng, Xinliang; Chen, Junhong

    2016-04-13

    Developing photoanodes with efficient sunlight harvesting, excellent charge separation and transfer, and fast surface reaction kinetics remains a key challenge in photoelectrochemical water splitting devices. Here we report a new strongly coupled ternary hybrid aerogel that is designed and constructed by in situ assembly of N-deficient porous carbon nitride nanosheets and NiFe-layered double hydroxide into a 3D N-doped graphene framework architecture using a facile hydrothermal method. Such a 3D hierarchical structure combines several advantageous features, including effective light-trapping, multidimensional electron transport pathways, short charge transport time and distance, strong coupling effect, and improved surface reaction kinetics. Benefiting from the desirable nanostructure, the ternary hybrid aerogels exhibited remarkable photoelectrochemical performance for water oxidation. Results included a record-high photocurrent density that reached 162.3 μA cm(-2) at 1.4 V versus the reversible hydrogen electrode with a maximum incident photon-to-current efficiency of 2.5% at 350 nm under AM 1.5G irradiation, and remarkable photostability. The work represents a significant step toward the development of novel 3D aerogel-based photoanodes for solar water splitting. PMID:26963768

  8. Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped SiO{sub 2}-Si interfaces

    SciTech Connect

    Mandelis, Andreas; Batista, Jerias; Gibkes, Juergen; Pawlak, Michael; Pelzl, Josef

    2005-04-15

    Laser infrared photocarrier radiometry (PCR) was used with a harmonically modulated low-power laser pump and a superposed dc superband-gap optical bias (a secondary laser beam) to control and monitor the space-charge-layer (SCL) width in oxidized p-Si-SiO{sub 2} and n-Si-SiO{sub 2} interfaces (wafers) exhibiting charged interface-state related band bending. Applying the theory of PCR-SCL dynamics [A. Mandelis, J. Appl. Phys. 97, 083508 (2005)] to the experiments yielded various transport parameters of the samples as well as depth profiles of the SCL exhibiting complete ( p-type Si) or partial (n-type Si) band flattening, to a degree controlled by widely different minority-carrier capture cross section at each interface. The uncompensated charge density at the interface was also calculated from the theory.

  9. The effects of donor dopant concentration on the grain boundary layer characteristics in n-doped BaTiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Al-Allak, H. M.; Illingsworth, J.; Brinkman, A. W.; Russell, G. J.; Woods, J.

    1988-12-01

    Positive temperature coefficient of resistance BaTiO3 specimens containing different donor dopant concentrations of Ho ranging from 0.05 to 1.8 at. % were investigated. The intergranular barrier layer capacitance per unit area, C'L, measured at a constant frequency of 30 kHz at both 40 and 160 °C was found to be proportional to the donor concentration up to 0.55 at. %, but then began to decrease as the donor concentration was increased beyond this. This indicated that both the density of acceptor states at the grain surfaces, Ns, and the relative permittivity ɛL of the material within the barrier layer were not affected by donor impurity concentrations below 0.55 at. % Ho. However, above this level of Ho concentration, the decrease in C'L appears to be related mainly to an increase in the value of Ns although it is possible that there were changes in ɛL. Initially both the maximum resistance and the room-temperature resistance (normalized per grain boundary per unit area), ρ'max and ρcold, respectively, were found to decrease sharply with donor concentration towards a broad minimum between ˜0.5 and ˜1.5 at. %, followed thereafter by a gradual increase. The temperature Tmax at which ρ'max occurred was also affected by the donor concentration; initially Tmax was found to increase with donor concentration followed by a reduction forming a broad maximum between about the same donor concentration limits corresponding to the minima in ρcold and ρ'max. These results are interpreted in terms of the well-established Heywang model.

  10. Li-Doped Ionic Liquid Electrolytes: From Bulk Phase to Interfacial Behavior

    NASA Technical Reports Server (NTRS)

    Haskins, Justin B.; Lawson, John W.

    2016-01-01

    Ionic liquids have been proposed as candidate electrolytes for high-energy density, rechargeable batteries. We present an extensive computational analysis supported by experimental comparisons of the bulk and interfacial properties of a representative set of these electrolytes as a function of Li-salt doping. We begin by investigating the bulk electrolyte using quantum chemistry and ab initio molecular dynamics to elucidate the solvation structure of Li(+). MD simulations using the polarizable force field of Borodin and coworkers were then performed, from which we obtain an array of thermodynamic and transport properties. Excellent agreement is found with experiments for diffusion, ionic conductivity, and viscosity. Combining MD simulations with electronic structure computations, we computed the electrochemical window of the electrolytes across a range of Li(+)-doping levels and comment on the role of the liquid environment. Finally, we performed a suite of simulations of these Li-doped electrolytes at ideal electrified interfaces to evaluate the differential capacitance and the equilibrium Li(+) distribution in the double layer. The magnitude of differential capacitance is in good agreement with our experiments and exhibits the characteristic camel-shaped profile. In addition, the simulations reveal Li(+) to be highly localized to the second molecular layer of the double layer, which is supported by additional computations that find this layer to be a free energy minimum with respect to Li(+) translation.

  11. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    SciTech Connect

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  12. Two-Equation Low-Reynolds-Number Turbulence Modeling of Transitional Boundary Layer Flows Characteristic of Gas Turbine Blades. Ph.D. Thesis. Final Contractor Report

    NASA Technical Reports Server (NTRS)

    Schmidt, Rodney C.; Patankar, Suhas V.

    1988-01-01

    The use of low Reynolds number (LRN) forms of the k-epsilon turbulence model in predicting transitional boundary layer flow characteristic of gas turbine blades is developed. The research presented consists of: (1) an evaluation of two existing models; (2) the development of a modification to current LRN models; and (3) the extensive testing of the proposed model against experimental data. The prediction characteristics and capabilities of the Jones-Launder (1972) and Lam-Bremhorst (1981) LRN k-epsilon models are evaluated with respect to the prediction of transition on flat plates. Next, the mechanism by which the models simulate transition is considered and the need for additional constraints is discussed. Finally, the transition predictions of a new model are compared with a wide range of different experiments, including transitional flows with free-stream turbulence under conditions of flat plate constant velocity, flat plate constant acceleration, flat plate but strongly variable acceleration, and flow around turbine blade test cascades. In general, calculational procedure yields good agreement with most of the experiments.

  13. Phosphorus doping a semiconductor particle

    DOEpatents

    Stevens, G.D.; Reynolds, J.S.

    1999-07-20

    A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

  14. Phosphorous doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott

    1999-07-20

    A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

  15. Tellurium doping of Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Ehsani, H.; Bhat, I.; Hitchcock, C.; Gutmann, R.J.; Charache, G.; Freeman, M.

    1998-06-01

    N-type Ga{sub 0.8}In{sub 0.2}Sb epitaxial layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using diethyltelluride (DETe) as the dopant source. The incorporation efficiency of Te in Ga{sub 0.8}In{sub 0.2}Sb and the electron mobility were found to be higher with GaSb substrates compared to using GaAs substrates. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electron concentration decreased, with only about 1% of the Te electrically active at a Te concentration of 2 {times} 10{sup 20} cm{sup {minus}3}.

  16. Microscopic and spectroscopic analysis of tungsten trioxide and titanium-doped tungsten trioxide thin films

    NASA Astrophysics Data System (ADS)

    Yun, Young Taek

    Tungsten oxide (WO3) has been a subject of high interest for its unique properties, and recently for its importance in different types of industrial applications which ranges from non-emissive displays, optical, microelectronic, catalytic/photocatalytic, humidity, temperature, gas, and biosensor devices. In this study, WO3 and Ti doped thin films were prepared using radio frequency magnetron reactive sputtering at different substrate temperatures ranging from room temperature to 500 °C in increments of 100 °C. After forming a hypothesis based on knowledge of established WO3 properties, we attempt in this work to investigate how the doping influences the roughness and the mean grain size of the nanoparticles on the surface layer of the thin films, its structure, and crystallinity. Therefore we pursued analysis by Atomic Force Microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy, using a comparative approach. The outcomes of these analyses demonstrate that higher temperatures are necessary for growing crystalline material if doping is used. Also, smaller nanoparticles are obtained when a small amount of dopant, e.g. 5% Ti, is incorporated. Both XRD and Raman measurement indicate morphological changes of the doped material. Finally, annealing of the amorphous doped samples at temperatures of 600 °C and 900 °C did not contribute significantly to material properties improvement.

  17. Nb-doped single crystalline MoS{sub 2} field effect transistor

    SciTech Connect

    Das, Saptarshi E-mail: das@anl.gov; Demarteau, Marcellinus; Roelofs, Andreas

    2015-04-27

    We report on the demonstration of a p-type, single crystalline, few layer MoS{sub 2} field effect transistor (FET) using Niobium (Nb) as the dopant. The doping concentration was extracted and determined to be ∼3 × 10{sup 19}/cm{sup 3}. We also report on bilayer Nb-doped MoS{sub 2} FETs with ambipolar conduction. We found that the current ON-OFF ratio of the Nb-doped MoS{sub 2} FETs changes significantly as a function of the flake thickness. We attribute this experimental observation to bulk-type electrostatic effect in ultra-thin MoS{sub 2} crystals. We provide detailed analytical modeling in support of our claims. Finally, we show that in the presence of heavy doping, even ultra-thin 2D-semiconductors cannot be fully depleted and may behave as a 3D material when used in transistor geometry. Our findings provide important insights into the doping constraints of 2D materials, in general.

  18. Hybrid window layer for photovoltaic cells

    DOEpatents

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-10-04

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  19. Hybrid window layer for photovoltaic cells

    DOEpatents

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-02-01

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  20. Hybrid window layer for photovoltaic cells

    DOEpatents

    Deng, Xunming

    2010-02-23

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  1. Thermophotovoltaic energy conversion system having a heavily doped n-type region

    DOEpatents

    DePoy, David M.; Charache, Greg W.; Baldasaro, Paul F.

    2000-01-01

    A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

  2. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Roberts, J. W.; Chalker, P. R.; Lee, K. B.; Houston, P. A.; Cho, S. J.; Thayne, I. G.; Guiney, I.; Wallis, D.; Humphreys, C. J.

    2016-02-01

    We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm-3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm-2 to -6.60 × 1012 cm-2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.

  3. Investigation of blown boundary layers with an improved wall jet system. Ph.D. Thesis. Final Technical Report, 1 Jul. 1978 - Dec. 1979; [to prevent turbulent boundary layer separation

    NASA Technical Reports Server (NTRS)

    Saripalli, K. R.; Simpson, R. L.

    1979-01-01

    The behavior of two dimensional incompressible turbulent wall jets submerged in a boundary layer when they are used to prevent boundary layer separation on plane surfaces is investigated. The experimental set-up and instrumentation are described. Experimental results of zero pressure gradient flow and adverse pressure gradient flow are presented. Conclusions are given and discussed.

  4. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    SciTech Connect

    Yin, H.; Ziemann, P.

    2014-06-23

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (10{sup 2} cm{sup 2}/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  5. Doping of graphene during chemical exfoliation

    NASA Astrophysics Data System (ADS)

    Srivastava, Pawan Kumar; Yadav, Premlata; Ghosh, Subhasis

    2013-02-01

    Graphene provides a perfect platform to explore the unique electronic properties in two-dimensions. However, most electronic applications are handicapped by the absence of a semiconducting gap in pristine graphene. To control the semiconducting properties of graphene, doping is regarded as one of the most feasible methods. Here we demonstrate that graphene can be effectively doped during chemical exfoliation of highly ordered pyrolitic graphite in organic solvents. Layered structure of graphene sheets was confirmed by confocal Raman spectroscopy and doping was probed by analyzing shift in Raman peak positions and transistor transfer (IDS-VGS) characteristics.

  6. Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers

    NASA Astrophysics Data System (ADS)

    Weiss, Thomas Paul; Redinger, Alex; Rey, Germain; Schwarz, Torsten; Spies, Maria; Cojocura-Mirédin, Oana; Choi, P.-P.; Siebentritt, Susanne

    2016-07-01

    Reported growth processes for kesterite absorber layers generally rely on a sequential process including a final high temperature annealing step. However, the impact and details for this annealing process vary among literature reports and little is known on its impact on electrical properties of the absorber. We used kesterite absorber layers prepared by a high temperature co-evaporation process to explicitly study the impact of two different annealing processes. From electrical characterization it is found that the annealing process incorporates a detrimental deep defect distribution. On the other hand, the doping density could be reduced leading to a better collection and a higher short circuit current density. The activation energy of the doping acceptor was studied with admittance spectroscopy and showed Meyer-Neldel behaviour. This indicates that the entropy significantly contributes to the activation energy.

  7. An experimental study of combustion: The turbulent structure of a reacting shear layer formed at a rearward-facing step. Ph.D. Thesis. Final Report

    NASA Technical Reports Server (NTRS)

    Pitz, R. W.

    1981-01-01

    A premixed propane-air flame is stabilized in a turbulent free shear layer formed at a rearward-facing step. The mean and rms averages of the turbulent velocity flow field were determined by LDV for both reacting and non-reacting flows. The reaching flow was visualized by high speed schlieren photography. Large scale structures dominate the reacting shear layer. The growth of the large scale structures is tied to the propagation of the flame. The linear growth rate of the reacting shear layer defined by the mean velocity profiles is unchanged by combustion but the virtual origin is shifted downstream. The reacting shear layer based on the mean velocity profiles is shifted toward the recirculation zone and the reattachments lengths are shortened by 30%.

  8. Inefficiency of the anti-doping system: cost reduction proposals.

    PubMed

    Maennig, Wolfgang

    2014-07-01

    The anti-doping system, under the guidance of WADA, costs at least $228 million per year, mostly to cover the cost of performing about 270,000 doping tests. However, "testing has not proven to be particularly effective in detecting dopers/cheats" (WADA). It is suggested, competitions of doping-endangered disciplines be redesigned. Sports with numerous doping cases should be temporarily excluded from the Olympic program and not be televised. Pecuniary fines should be higher and collection guaranteed by a deferred compensation model. Sports with multiple doping offenses should bear most of the anti-doping costs. Finally, appropriate tenders should guarantee fees of anti-doping laboratories develop more competitively.

  9. Nanocrystal doped matrixes

    SciTech Connect

    Parce, J. Wallace; Bernatis, Paul; Dubrow, Robert; Freeman, William P.; Gamoras, Joel; Kan, Shihai; Meisel, Andreas; Qian, Baixin; Whiteford, Jeffery A.; Ziebarth, Jonathan

    2010-01-12

    Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

  10. Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

    NASA Technical Reports Server (NTRS)

    Schlecht, E.; Maiwald, F.; Chattopadhyay, G.; Martin, S.; Mehdi, I.

    2001-01-01

    Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

  11. Fluorine compounds for doping conductive oxide thin films

    DOEpatents

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  12. Experimental and theoretical investigation of three-dimensional turbulent boundary layers and turbulence characteristics inside an axial flow inducer passage. Final Report. Ph.D. Thesis, Jun. 1971

    NASA Technical Reports Server (NTRS)

    Anand, A. K.; Lakshminarayana, B.

    1977-01-01

    Analytical and experimental investigations of the characteristics of three dimensional turbulent boundary layers in a rotating helical passage of an inducer rotor are reported. Expressions are developed for the velocity profiles in the inner layer, where the viscous effects dominate, in the outer layer, where the viscous effects are small, and in the interference layer, where the end walls influence the flow. The prediction of boundary layer growth is based on the momentum integral technique. The equations derived are general enough to be valid for all turbomachinery rotors with arbitrary pressure gradients. The experimental investigations are carried out in a flat plate inducer 3 feet in diameter. The mean velocity profiles, turbulence intensities and shear stresses, wall shear stress, and limiting streamline angles are measured at various radial and chordwise locations by using rotating probes. The measurements are in general agreement with the predictions. The radial flows are well represented by an expression which includes the effect of stagger angle and radial pressure gradient. The radial flows in the rotor channel are higher than those on a single blade. The collateral region exists only very near the blade surface. The radial component of turbulence intensity is higher than the streamwise component because of the effect of rotation.

  13. Trench process and structure for backside contact solar cells with polysilicon doped regions

    DOEpatents

    De Ceuster, Denis; Cousins, Peter John; Smith, David D

    2013-05-28

    A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

  14. Trench process and structure for backside contact solar cells with polysilicon doped regions

    DOEpatents

    De Ceuster, Denis; Cousins, Peter John; Smith, David D

    2014-03-18

    A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

  15. Trench process and structure for backside contact solar cells with polysilicon doped regions

    DOEpatents

    De Ceuster, Denis; Cousins, Peter John; Smith, David D.

    2010-12-14

    A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

  16. Boron-doped superlattices and Bragg mirrors in diamond

    SciTech Connect

    Fiori, A.; Bousquet, J.; Eon, D.; Omnès, F.; Bustarret, E.; Bellet-Amalric, E.

    2014-08-25

    A periodic modulation of the boron doping level of single crystal diamond multilayers over more than three orders of magnitude during epitaxial growth by microwave plasma-enhanced chemical vapor deposition is shown to yield Bragg mirrors in the visible. The thicknesses and doping level of the individual layers were controlled by in situ spectroscopic ellipsometry, enabling to tune the reflectance peak to the wavelength range of diamond color centers, such as NV{sup 0} or NV{sup −}. The crystalline quality, periodicity, and sharpness of the doping transitions in these doping superlattices over tens of periods were confirmed by high resolution X-ray diffraction.

  17. Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator.

    PubMed

    Kawasugi, Yoshitaka; Seki, Kazuhiro; Edagawa, Yusuke; Sato, Yoshiaki; Pu, Jiang; Takenobu, Taishi; Yunoki, Seiji; Yamamoto, Hiroshi M; Kato, Reizo

    2016-01-01

    It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping. PMID:27492864

  18. Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator.

    PubMed

    Kawasugi, Yoshitaka; Seki, Kazuhiro; Edagawa, Yusuke; Sato, Yoshiaki; Pu, Jiang; Takenobu, Taishi; Yunoki, Seiji; Yamamoto, Hiroshi M; Kato, Reizo

    2016-01-01

    It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping.

  19. Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

    NASA Astrophysics Data System (ADS)

    Kawasugi, Yoshitaka; Seki, Kazuhiro; Edagawa, Yusuke; Sato, Yoshiaki; Pu, Jiang; Takenobu, Taishi; Yunoki, Seiji; Yamamoto, Hiroshi M.; Kato, Reizo

    2016-08-01

    It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping.

  20. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen

    DOEpatents

    Compaan, Alvin D.; Price, Kent J.; Ma, Xianda; Makhratchev, Konstantin

    2005-02-08

    A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.