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Sample records for dot interfacial layer

  1. A quinoxaline based N-heteroacene interfacial layer for efficient hole-injection in quantum dot light-emitting diodes.

    PubMed

    Bai, Linyi; Yang, Xuyong; Ang, Chung Yen; Nguyen, Kim Truc; Ding, Tao; Bose, Purnandhu; Gao, Qiang; Mandal, Amal Kumar; Sun, Xiao Wei; Demir, Hilmi Volkan; Zhao, Yanli

    2015-07-21

    A series of N-heterocyclic quinoxaline derivatives was successfully synthesized and applied as hole transport layers in quantum dot light-emitting diodes (QLEDs). By inducing sp(2) N-atoms into the quinoxaline backbone, the electron affinity of the obtained material was enhanced, and its optical properties and bandgap became tunable. Quinoxaline based N-heteroacenes show a narrow bandgap, high thermal stability, and aligned film morphology. The resulting N-heteroacene polymer based QLED exhibits superior performance to poly(9-vinylcarbazole) based QLED. This study presents a strategy towards the design of novel N-rich molecules for the fabrication of QLEDs with improved performance.

  2. A quinoxaline based N-heteroacene interfacial layer for efficient hole-injection in quantum dot light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Bai, Linyi; Yang, Xuyong; Ang, Chung Yen; Nguyen, Kim Truc; Ding, Tao; Bose, Purnandhu; Gao, Qiang; Mandal, Amal Kumar; Sun, Xiao Wei; Demir, Hilmi Volkan; Zhao, Yanli

    2015-07-01

    A series of N-heterocyclic quinoxaline derivatives was successfully synthesized and applied as hole transport layers in quantum dot light-emitting diodes (QLEDs). By inducing sp2 N-atoms into the quinoxaline backbone, the electron affinity of the obtained material was enhanced, and its optical properties and bandgap became tunable. Quinoxaline based N-heteroacenes show a narrow bandgap, high thermal stability, and aligned film morphology. The resulting N-heteroacene polymer based QLED exhibits superior performance to poly(9-vinylcarbazole) based QLED. This study presents a strategy towards the design of novel N-rich molecules for the fabrication of QLEDs with improved performance.A series of N-heterocyclic quinoxaline derivatives was successfully synthesized and applied as hole transport layers in quantum dot light-emitting diodes (QLEDs). By inducing sp2 N-atoms into the quinoxaline backbone, the electron affinity of the obtained material was enhanced, and its optical properties and bandgap became tunable. Quinoxaline based N-heteroacenes show a narrow bandgap, high thermal stability, and aligned film morphology. The resulting N-heteroacene polymer based QLED exhibits superior performance to poly(9-vinylcarbazole) based QLED. This study presents a strategy towards the design of novel N-rich molecules for the fabrication of QLEDs with improved performance. Electronic supplementary information (ESI) available: Synthesis and characterization details. See DOI: 10.1039/c5nr03197d

  3. Influence of interfacial oxide on the optical properties of single layer CdTe/CdS quantum dots in porous silicon scaffolds

    SciTech Connect

    Gaur, Girija; Fleetwood, Daniel M.; Weller, Robert A.; Reed, Robert A.; Weiss, Sharon M.; Koktysh, Dmitry S.

    2015-08-10

    Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and photoluminescence intensities of sub-monolayer colloidal CdTe/CdS quantum dots (QDs) embedded in a three-dimensional porous silicon (PSi) scaffold. The PSi matrix was thermally oxidized under different conditions to change the interfacial oxide thickness. QDs embedded in a PSi matrix with ∼0.4 nm of interfacial oxide exhibited reduced photoluminescence intensity and nearly five times shorter radiative lifetimes (∼16 ns) compared to QDs immobilized within completely oxidized, porous silica (PSiO{sub 2}) frameworks (∼78 ns). The exponential dependence of QD lifetime on interfacial oxide thickness in the PSi scaffolds suggests charge transfer plays an important role in the exciton dynamics.

  4. Interfacial Engineering for Quantum-Dot-Sensitized Solar Cells.

    PubMed

    Shen, Chao; Fichou, Denis; Wang, Qing

    2016-04-20

    Quantum-dot-sensitized solar cells (QDSCs) are promising solar-energy-conversion devices, as low-cost alternatives to the prevailing photovoltaic technologies. Compared with molecular dyes, nanocrystalline quantum dot (QD) light absorbers exhibit higher molar extinction coefficients and a tunable photoresponse. However, the power-conversion efficiencies (PCEs) of QDSCs are generally below 9.5 %, far behind their molecular sensitizer counterparts (up to 13 %). These low PCEs have been attributed to a large free-energy loss during sensitizer regeneration, energy loss during the charge-carrier transport and transfer processes, and inefficient charge separation at the QD/electrolyte interfaces, and various interfacial engineering strategies for enhancing the PCE and cell stability have been reported. Herein, we review recent progress in the interfacial engineering of QDSCs and discuss future prospects for the development of highly efficient and stable QDSCs. PMID:26879244

  5. Correlated Single Quantum Dot Blinking and Interfacial Electron Transfer Dynamics.

    PubMed

    Jin, Shengye; Hsiang, Jung-Cheng; Zhu, Haiming; Song, Nianhui; Dickson, Robert M; Lian, Tianquan

    2010-08-31

    The electron transfer (ET) dynamics from core/multi-shell (CdSe/CdS(3ML)ZnCdS(2ML)ZnS(2ML)) quantum dots (QDs) to adsorbed Fluorescein (F27) molecules have been studied by single particle spectroscopy to probe the relationship between single QD interfacial electron transfer and blinking dynamics. Electron transfer from the QD to F27 and the subsequent recombination were directly observed by ensemble-averaged transient absorption spectroscopy. Single QD-F27 complexes show correlated fluctuation of fluorescence intensity and lifetime, similar to those observed in free QDs. With increasing ET rate (controlled by F27-to-QD ratio), the lifetime of on states decreases and relative contribution of off states increases. It was shown that ET is active for QDs in on states, the excited state lifetime of which reflects the ET rate, whereas in the off state QD excitons decay by Auger relaxation and ET is not a competitive quenching pathway. Thus, the blinking dynamics of single QDs modulate their interfacial ET activity. Furthermore, interfacial ET provides an additional pathway for generating off states, leading to correlated single QD interfacial ET and blinking dynamics in QD-acceptor complexes. Because blinking is a general phenomenon of single QDs, it appears that the correlated interfacial ET and blinking and the resulting intermittent ET activity are general phenomena for single QDs.

  6. Modeling interfacial liquid layers on environmental ices

    NASA Astrophysics Data System (ADS)

    Kuo, M. H.; Moussa, S. G.; McNeill, V. F.

    2011-09-01

    Interfacial layers on ice significantly influence air-ice chemical interactions. In solute-containing aqueous systems, a liquid brine may form upon freezing due to the exclusion of impurities from the ice crystal lattice coupled with freezing point depression in the concentrated brine. The brine may be segregated to the air-ice interface where it creates a surface layer, in micropockets, or at grain boundaries or triple junctions. We present a model for brines and their associated liquid layers in environmental ice systems that is valid over a wide range of temperatures and solute concentrations. The model is derived from fundamental equlibrium thermodynamics and takes into account nonideal solution behavior in the brine, partitioning of the solute into the ice matrix, and equilibration between the brine and the gas phase for volatile solutes. We find that these phenomena are important to consider when modeling brines in environmental ices, especially at low temperatures. We demonstrate its application for environmentally important volatile and nonvolatile solutes including NaCl, HCl, and HNO3. The model is compared to existing models and experimental data from literature where available. We also identify environmentally relevant regimes where brine is not predicted to exist, but the QLL may significantly impact air-ice chemical interactions. This model can be used to improve the representation of air-ice chemical interactions in polar atmospheric chemistry models.

  7. Tailored interfacial rheology for gastric stable adsorption layers.

    PubMed

    Scheuble, N; Geue, T; Windhab, E J; Fischer, P

    2014-08-11

    Human lipid digestion begins at the interface of oil and water by interfacial adsorption of lipases. Tailoring the available surface area for lipase activity can lead to specific lipid sensing in the body, thus, tailored satiety hormone release. In this study we present biopolymer layers at the MCT-oil/water interface with different stabilities under human gastric environment (37 °C, pH 2, pepsin). Physicochemical changes and enzymatic degradation of interfacial layers were monitored online by interfacial shear rheology. We show the weakening of β-lactoglobulin (β-lg) layers at body temperature and acidification and their hydrolysis by pepsin. If sufficient concentrations of nanocrystalline cellulose (NCC) are given to an existing β-lg layer, this weakening is buffered and the proteolysis delayed. A synergistic, composite layer is formed by adding methylated NCC to the β-lg layer. This layer thermogels at body temperature and resists hydrolysis by pepsin. Coexistence of these two emulsifiers at the air/water interface is evidenced by neutron reflectometry measurements, where morphological information are extracted. The utilized layers and their analysis provide knowledge of physicochemical changes during in vitro digestion of interfaces, which promote functional food formulations. PMID:25029559

  8. Graphene as an efficient interfacial layer for electrochromic devices.

    PubMed

    Lin, Feng; Bult, Justin B; Nanayakkara, Sanjini; Dillon, Anne C; Richards, Ryan M; Blackburn, Jeffrey L; Engtrakul, Chaiwat

    2015-06-01

    This study presents an interfacial modification strategy to improve the performance of electrochromic films that were fabricated by a magnetron sputtering technique. High-quality graphene sheets, synthesized by chemical vapor deposition, were used to modify fluorine-doped tin oxide substrates, followed by the deposition of high-performance nanocomposite nickel oxide electrochromic films. Electrochromic cycling results revealed that a near-complete monolayer graphene interfacial layer improves the electrochromic performance in terms of switching kinetics, activation period, coloration efficiency, and bleached-state transparency, while maintaining ∼100% charge reversibility. The present study offers an alternative route for improving the interfacial properties between electrochromic and transparent conducting oxide films without relying on conventional methods such as nanostructuring or thin film composition control. PMID:25950270

  9. Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures

    SciTech Connect

    Rajalakshmi, M.; Sohila, S.; Ramesh, R.; Bhalerao, G.M.

    2012-09-15

    Highlights: ► ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. ► Interfacial heterostructure formation of ZnS/ZnO QDs is seen in HRTEM. ► Enormous enhancement of UV emission (∼10 times) in ZnS/ZnO QDs heterostructure is observed. ► Phonon confinement effect is seen in the Raman spectrum. -- Abstract: ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.

  10. Organic photovoltaic device with interfacial layer and method of fabricating same

    DOEpatents

    Marks, Tobin J.; Hains, Alexander W.

    2013-03-19

    An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5'-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2'-bithiophene (PABTSi.sub.2).

  11. Quantum dot laser optimization: selectively doped layers

    NASA Astrophysics Data System (ADS)

    Korenev, Vladimir V.; Konoplev, Sergey S.; Savelyev, Artem V.; Shernyakov, Yurii M.; Maximov, Mikhail V.; Zhukov, Alexey E.

    2016-08-01

    Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics.

  12. Interfacial layer effects on surface capacitances and electro-osmosis in electrolytes.

    PubMed

    Bonthuis, Douwe Jan; Uematsu, Yuki; Netz, Roland R

    2016-02-13

    Many properties of the interfacial layer of water at surfaces differ significantly from those of bulk water. The consequences are most significant for the double-layer capacitance and the electrokinetic properties. We model the interfacial hydration layer by a modified dielectric constant and a modified local viscosity over a single interfacial width. Analytic expressions in the low-charge Debye-Hückel approximation are derived and shown to describe experimental surface capacitance and electro-osmotic data in a unified framework.

  13. The effect of interfacial layer on the performance of organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Choulis, Stelios A.; Choong-En, Vi; Mathai, Mathew K.; So, Franky

    2005-09-01

    We demonstrate high efficiency organic light-emitting devices by incorporation of a nanoscale interfacial layer between a hole-conducting layer (PEDOT:PSS) and a light-emitting polymer layer (LEP) to improve hole injection. The interfacial layer has appropriate highest occupied molecular orbital level in order to act as a bridge for efficient hole injection from the PEDOT:PSS into the LEP. As an example we have incorporated a suitable interfacial layer into a green-emitting single-layer electrophosphorescent light-emitting diode. Devices with the interfacial layer show a peak efficiency of 41lm/W, an improvement of more than 25% in their performance over comparable devices without the interfacial layer. The results presented here introduce a novel method to improve hole injection and thus efficiency in organic electroluminescent devices.

  14. Surface alloys as interfacial layers between quasicrystalline and periodic materials

    NASA Astrophysics Data System (ADS)

    Duguet, T.; Ledieu, J.; Dubois, J. M.; Fournée, V.

    2008-08-01

    Low adhesion with normal metals is an intrinsic property of many quasicrystalline surfaces. Although this property could be useful to develop low friction or non-stick coatings, it is also responsible for the poor adhesion of quasicrystalline coatings on metal substrates. Here we investigate the possibility of using complex metallic surface alloys as interface layers to enhance the adhesion between quasicrystals and simple metal substrates. We first review some examples where such complex phases are formed as an overlayer. Then we study the formation of such surface alloys in a controlled way by annealing a thin film deposited on a quasicrystalline substrate. We demonstrate that a coherent buffer layer consisting of the γ-Al4Cu9 approximant can be grown between pure Al and the i-Al-Cu-Fe quasicrystal. The interfacial relationships between the different layers are defined by [111]_{\\mathrm {Al}}\\parallel [110]_{\\mathrm {Al_4Cu_9}}\\parallel [5\\mathrm {f}]_{i\\mbox {-}\\mathrm {Al\\mbox {--}Cu \\mbox {--}Fe}} .

  15. Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells.

    PubMed

    Park, Keunhee; Oh, Seungsik; Jung, Donggeun; Chae, Heeyeop; Kim, Hyoungsub; Boo, Jin-Hyo

    2012-01-09

    We have used hafnium metallocene compounds as cathode interfacial layers for organic solar cells [OSCs]. A metallocene compound consists of a transition metal and two cyclopentadienyl ligands coordinated in a sandwich structure. For the fabrication of the OSCs, poly[3,4-ethylenedioxythiophene]:poly(styrene sulfonate), poly(3-hexylthiophene-2,5-diyl) + 66-phenyl C61 butyric acid methyl ester, bis-(ethylcyclopentadienyl)hafnium(IV) dichloride, and aluminum were deposited as a hole transport layer, an active layer, a cathode interfacial layer, and a cathode, respectively. The hafnium metallocene compound cathode interfacial layer improved the performance of OSCs compared to that of OSCs without the interfacial layer. The current density-voltage characteristics of OSCs with an interfacial layer thickness of 0.7 nm and of those without an interfacial layer showed power conversion efficiency [PCE] values of 2.96% and 2.34%, respectively, under an illumination condition of 100 mW/cm2 (AM 1.5). It is thought that a cathode interfacial layer of an appropriate thickness enhances the electron transfer between the active layer and the cathode, and thus increases the PCE of the OSCs.

  16. On the influence of interfacial properties to the bending rigidity of layered structures

    NASA Astrophysics Data System (ADS)

    Peng, Shenyou; Wei, Yujie

    2016-07-01

    Layered structures are ubiquitous, from one-atom thick layers in two-dimensional materials, to nanoscale lipid bi-layers, and to micro and millimeter thick layers in composites. The mechanical behavior of layered structures heavily depends on the interfacial properties and is of great interest in engineering practice. In this work, we give an analytical solution of the bending rigidity of bilayered structures as a function of the interfacial shear strength. Our results show that while the critical bending stiffness when the interface starts to slide plastically is proportional to the interfacial shear strength, there is a strong nonlinearity between the rigidity and the applied bending after interfacial plastic shearing. We further give semi-analytical solutions to the bending of bilayers when both interfacial shearing and pre-existing crack are present in the interface of rectangular and circular bilayers. The analytical solutions are validated by using finite element simulations. Our analysis suggests that interfacial shearing resistance, interfacial stiffness and preexisting cracks dramatically influence the bending rigidity of bilayers. The results can be utilized to understand the significant stiffness difference in typical biostructures and novel materials, and may also be used for non-destructive detection of interfacial crack in composites when stiffness can be probed through vibration techniques.

  17. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

    PubMed

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-07-01

    Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise. PMID:27295399

  18. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

    PubMed

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-07-01

    Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise.

  19. High reduction of interfacial charge recombination in colloidal quantum dot solar cells by metal oxide surface passivation

    NASA Astrophysics Data System (ADS)

    Chang, Jin; Kuga, Yuki; Mora-Seró, Iván; Toyoda, Taro; Ogomi, Yuhei; Hayase, Shuzi; Bisquert, Juan; Shen, Qing

    2015-03-01

    Bulk heterojunction (BHJ) solar cells based on colloidal QDs and metal oxide nanowires (NWs) possess unique and outstanding advantages in enhancing light harvesting and charge collection in comparison to planar architectures. However, the high surface area of the NW structure often brings about a large amount of recombination (especially interfacial recombination) and limits the open-circuit voltage in BHJ solar cells. This problem is solved here by passivating the surface of the metal oxide component in PbS colloidal quantum dot solar cells (CQDSCs). By coating thin TiO2 layers onto ZnO-NW surfaces, the open-circuit voltage and power conversion efficiency have been improved by over 40% in PbS CQDSCs. Characterization by transient photovoltage decay and impedance spectroscopy indicated that the interfacial recombination was significantly reduced by the surface passivation strategy. An efficiency as high as 6.13% was achieved through the passivation approach and optimization for the length of the ZnO-NW arrays (device active area: 16 mm2). All solar cells were tested in air, and exhibited excellent air storage stability (without any performance decline over more than 130 days). This work highlights the significance of metal oxide passivation in achieving high performance BHJ solar cells. The charge recombination mechanism uncovered in this work could shed light on the further improvement of PbS CQDSCs and/or other types of solar cells.Bulk heterojunction (BHJ) solar cells based on colloidal QDs and metal oxide nanowires (NWs) possess unique and outstanding advantages in enhancing light harvesting and charge collection in comparison to planar architectures. However, the high surface area of the NW structure often brings about a large amount of recombination (especially interfacial recombination) and limits the open-circuit voltage in BHJ solar cells. This problem is solved here by passivating the surface of the metal oxide component in PbS colloidal quantum dot solar

  20. Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts

    NASA Technical Reports Server (NTRS)

    Porter, W. A.; Parker, D. L.

    1976-01-01

    Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.

  1. Effect of interfacial layer on water flow in nanochannels: Lattice Boltzmann simulations

    NASA Astrophysics Data System (ADS)

    Jin, Yakang; Liu, Xuefeng; Liu, Zilong; Lu, Shuangfang; Xue, Qingzhong

    2016-04-01

    A novel interfacial model was proposed to understand water flow mechanism in nanochannels. Based on our pore-throat nanochannel model, the effect of interfacial layer on water flow in nanochannels was quantitatively studied using Lattice Boltzmann method (LBM). It is found that both the permeability of nanochannel and water velocity in the nanochannel dramatically decrease with increasing the thickness of interfacial layer. The permeability of nanochannel with pore radius of 10 nm decreases by about three orders of magnitude when the thickness of interfacial layer is changed from 0 nm to 3 nm gradually. Furthermore, it has been demonstrated that the cross-section shape has a great effect on the water flow inside nanochannel and the effect of interfacial layer on the permeability of nanochannel has a close relationship with cross-section shape when the pore size is smaller than 12 nm. Besides, both pore-throat ratio and throat length can greatly affect water flow in nanochannels, and the influence of interfacial layer on water flow in nanochannels becomes more evident with increasing pore-throat ratio and throat length. Our theoretical results provide a simple and effective method to study the flow phenomena in nano-porous media, particularly to quantitatively study the interfacial layer effect in nano-porous media.

  2. Ultrafast interfacial charge transfer dynamics in dye-sensitized and quantum dot solar cell

    NASA Astrophysics Data System (ADS)

    Ghosh, Hirendra N.

    2013-02-01

    Dye sensitized solar cell (DSSC) appeared to be one of the good discovery for the solution of energy problem. We have been involved in studying ultrafast interfacial electron transfer dynamics in DSSC using femtosecond laser spectroscopy. However it has been realized that it is very difficult to design and develop higher efficient one, due to thermodynamic limitation. Again in DSSC most of the absorbed photon energy is lost as heat within the cell, which apart from decreasing the efficiency also destabilizes the device. It has been realized that quantum dot solar cell (QDSC) are the best bet where the sensitizer dye molecules can be replaced by suitable quantum dot (QD) materials in solar cell. The quantum-confinement effect in semiconductors modifies their electronic structure, which is a very important aspect of these materials. For photovoltaic applications, a long-lived charge separation remains one of the most essential criteria. One of the problems in using QDs for photovoltaic applications is their fast charge recombination caused by nonradiative Auger processes, which occur predominantly at lower particle sizes due to an increase in the Coulomb interaction between electrons and holes. Various approaches, such as the use of metal-semiconductor composites, semiconductor-polymer composite, and semiconductor core-shell heterostructures, have been attempted to minimize the fast recombination between electrons and holes. To make higher efficient solar devices it has been realised that it is very important to understand charge carrier and electron transfer dynamics in QD and QD sensitized semiconductor nanostructured materials. In the present talk, we are going to discuss on recent works on ultrafast electron transfer dynamics in dye-sensitized TiO2 nanoparticles/film [1-12] and charge (electron/hole) transfer dynamics in quantum dot core-shell nano-structured materials [13-17].

  3. TFB:TPDSi2 interfacial layer usable in organic photovoltaic cells

    DOEpatents

    Marks, Iobin J.; Hains, Alexander W.

    2011-02-15

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode; an active organic layer comprising an electron-donating organic material and an electron-accepting organic material; and an interfacial layer formed between the anode and active organic layer, where the interfacial layer comprises a hole-transporting polymer characterized with a hole-mobility higher than that of the electron-donating organic material in the active organic layer, and a small molecule that has a high hole-mobility and is capable of crosslinking on contact with air.

  4. Molecular dynamics simulations of the microstructure of the aluminum/alumina interfacial layer

    NASA Astrophysics Data System (ADS)

    Mei, Hai; Liu, Qiwen; Liu, Lisheng; Lai, Xin; She, Wuchang; Zhai, Pengcheng

    2015-01-01

    The atomic structure and charge distribution pattern of the Al/α-Al2O3 interface were studied utilizing molecular dynamics simulations. In order to accurately describe the interactions between the atoms around the interface, the charge transfer ionic and embedded atom method potential was used. Energetically preferable Al/α-Al2O3 interface systems were first determined to study the layer structures of the interface systems. Two energetically preferable Al/α-Al2O3 interface systems with a [ 1 bar 1 0 ](1 1 1) Al ∥ [ 1 0 1 bar 0 ](0 0 0 1) Al2O3 orientation relationship were obtained, corresponding to the atop-O Al-terminated and atop-O O-terminated relaxed models, respectively. Further studies revealed the presence of an interfacial layer, which is consistent with experimental results. The models predict a thickness of the interfacial layer between 12.14 Å and 16.82 Å. It is composed of aluminum suboxide (with an Al to O atomic ratio between 1:1.07 and 1:1.17). In addition, both the combination between the interfacial layer and the metallic Al layer and the interfacial layer and the ceramic α-Al2O3 were perfect. In order to further study the atomic structure of the Al/α-Al2O3 interfacial layer, it was isolated from the system and modeled separately. An analysis of the radial distribution function revealed that the interfacial layer inherits its structure from the α-Al2O3 moiety. The study of the charge distributions in the interface systems indicates that the charge of the Al atoms in the interfacial layer is mainly in the range from +2.1 e to +2.6 e while the charge of the O atoms is at the saturated state of -2e.

  5. Boosting the efficiency of quantum dot sensitized solar cells through modulation of interfacial charge transfer.

    PubMed

    Kamat, Prashant V

    2012-11-20

    The demand for clean energy will require the design of nanostructure-based light-harvesting assemblies for the conversion of solar energy into chemical energy (solar fuels) and electrical energy (solar cells). Semiconductor nanocrystals serve as the building blocks for designing next generation solar cells, and metal chalcogenides (e.g., CdS, CdSe, PbS, and PbSe) are particularly useful for harnessing size-dependent optical and electronic properties in these nanostructures. This Account focuses on photoinduced electron transfer processes in quantum dot sensitized solar cells (QDSCs) and discusses strategies to overcome the limitations of various interfacial electron transfer processes. The heterojunction of two semiconductor nanocrystals with matched band energies (e.g., TiO(2) and CdSe) facilitates charge separation. The rate at which these separated charge carriers are driven toward opposing electrodes is a major factor that dictates the overall photocurrent generation efficiency. The hole transfer at the semiconductor remains a major bottleneck in QDSCs. For example, the rate constant for hole transfer is 2-3 orders of magnitude lower than the electron injection from excited CdSe into oxide (e.g., TiO(2)) semiconductor. Disparity between the electron and hole scavenging rate leads to further accumulation of holes within the CdSe QD and increases the rate of electron-hole recombination. To overcome the losses due to charge recombination processes at the interface, researchers need to accelerate electron and hole transport. The power conversion efficiency for liquid junction and solid state quantum dot solar cells, which is in the range of 5-6%, represents a significant advance toward effective utilization of nanomaterials for solar cells. The design of new semiconductor architectures could address many of the issues related to modulation of various charge transfer steps. With the resolution of those problems, the efficiencies of QDSCs could approach those of dye

  6. Optimization of Residual Stresses in MMC's Using Compensating/Compliant Interfacial Layers. Part 2: OPTCOMP User's Guide

    NASA Technical Reports Server (NTRS)

    Pindera, Marek-Jerzy; Salzar, Robert S.; Williams, Todd O.

    1994-01-01

    A user's guide for the computer program OPTCOMP is presented in this report. This program provides a capability to optimize the fabrication or service-induced residual stresses in uni-directional metal matrix composites subjected to combined thermo-mechanical axisymmetric loading using compensating or compliant layers at the fiber/matrix interface. The user specifies the architecture and the initial material parameters of the interfacial region, which can be either elastic or elastoplastic, and defines the design variables, together with the objective function, the associated constraints and the loading history through a user-friendly data input interface. The optimization procedure is based on an efficient solution methodology for the elastoplastic response of an arbitrarily layered multiple concentric cylinder model that is coupled to the commercial optimization package DOT. The solution methodology for the arbitrarily layered cylinder is based on the local-global stiffness matrix formulation and Mendelson's iterative technique of successive elastic solutions developed for elastoplastic boundary-value problems. The optimization algorithm employed in DOT is based on the method of feasible directions.

  7. Probing nonlinear rheology layer-by-layer in interfacial hydration water

    PubMed Central

    Kim, Bongsu; Kwon, Soyoung; Lee, Manhee; Kim, QHwan; An, Sangmin; Jhe, Wonho

    2015-01-01

    Viscoelastic fluids exhibit rheological nonlinearity at a high shear rate. Although typical nonlinear effects, shear thinning and shear thickening, have been usually understood by variation of intrinsic quantities such as viscosity, one still requires a better understanding of the microscopic origins, currently under debate, especially on the shear-thickening mechanism. We present accurate measurements of shear stress in the bound hydration water layer using noncontact dynamic force microscopy. We find shear thickening occurs above ∼ 106 s−1 shear rate beyond 0.3-nm layer thickness, which is attributed to the nonviscous, elasticity-associated fluidic instability via fluctuation correlation. Such a nonlinear fluidic transition is observed due to the long relaxation time (∼ 10−6 s) of water available in the nanoconfined hydration layer, which indicates the onset of elastic turbulence at nanoscale, elucidating the interplay between relaxation and shear motion, which also indicates the onset of elastic turbulence at nanoscale above a universal shear velocity of ∼ 1 mm/s. This extensive layer-by-layer control paves the way for fundamental studies of nonlinear nanorheology and nanoscale hydrodynamics, as well as provides novel insights on viscoelastic dynamics of interfacial water. PMID:26644571

  8. Understanding the interfacial layer dynamics of polymer nanocomposites from broadband dielectric spectroscopy

    NASA Astrophysics Data System (ADS)

    Carroll, Robert; Cheng, Shiwang; Sokolov, Alexei

    Polymer nanocomposites show many advanced mechanical, thermal, optical, and transport properties mainly due to the vast interfacial area between the polymer matrix and nanoparticles. Recent studies show that there is an interfacial polymer layer with structure and dynamics that are different from the bulk polymer, and that contributes to the advanced macroscopic properties. It has been shown that broadband dielectric spectroscopy provides good method to study the interfacial dynamics in nanocomposites. However, current dielectric spectroscopy studies ignore the heterogeneous nature of polymer nanocomposites. Models based on a simple superposition of bulk polymer and interfacial layer spectra, or those that assume the interfacial layer is dynamically ``dead'' are inaccurate. In this talk, the prevailing methods in the literature will be compared with an accurate method accounting for the heterogeneity of the nanocomposites. Different nanocomposites with well-dispersed nanoparticles will be used as examples. The analysis clearly shows that the width and the amplitude of the relaxation peaks are affected by the data analysis. Thus accurate quantitative conclusions on properties and thickness of the interfacial layer can be achieved only using heterogeneous models.

  9. Polyfluorene Electrolytes Interfacial Layer for Efficient Polymer Solar Cells: Controllably Interfacial Dipoles by Regulation of Polar Groups.

    PubMed

    Liu, Huimin; Hu, Lin; Wu, Feiyan; Chen, Lie; Chen, Yiwang

    2016-04-20

    The polar groups in the conjugated polyelectrolytes (CPEs) can create the favorable dipoles at the electrode/active layer interface, which is critical for the CPEs to minimize the interfacial energy barrier in polymer solar cells (PSCs). Herein, a series of CPEs based on poly [(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-co-2,7-(9,9-dioctylfluorene)] derivates (PFNs) (PFN30, PFN50, PFN70, and PFN100) with different mole ratio of polar groups (-N(C2H5)2) were designed and synthesized to investigate the effect of the numbers of polar groups on the interfacial dipoles. Controllably interfacial dipoles could be readily achieved by only tuning the numbers of -N(C2H5)2 in PFNs, as revealed by the work function of the PFNs modified ITO gradually reduced as the loadings of the -N(C2H5)2 increased. In addition, increasing the numbers of -N(C2H5)2 in PFNs were also favorable for developing the smooth and homogeneous morphology of the active layer. As a result, the content of the polar amine in the PFNs exerted great influence on the performance of polymer solar cells. Increasing the numbers of the pendent -N(C2H5)2 could effectively improve the power conversion efficiency (PCE) of the devices. Among these PFNs, PFN100 with the highest content of -N(C2H5)2 polar groups delivered the device with the best PCE of 3.27%. It indicates tailoring the content of the polar groups in the CPEs interlayer is a facial and promising approach for interfacial engineering to developing high performance PSCs.

  10. Effects of soil layering and interfacial tension on DNAPL migration in subsurface environments

    SciTech Connect

    Singletary, M.A.; Pennell, K.D.; Ramsburg, A.

    1999-07-01

    A series of tetrachloroethene (PCE) infiltration experiments was conducted in 2-dimensional aquifer cells to investigate the effects of soil layering and interfacial tension on dense non-aqueous phase liquid (DNAPL) infiltration and entrapment in saturated environments. The aquifer cells were packed with a background medium, 20--30 mesh Ottawa sand, and a single low-permeability layer, consisting of either F-70 Ottawa sand or Wurtsmith aquifer material, located near the center of the cell. PCE was introduced approximately 5 cm below the water table at a constant flow rate of 0.05 ml/min. The results of these experiments demonstrate the dramatic effects that interfacial tension reduction can have on DNAPL flow and entrapment in layered subsurface systems. These findings also have implications during field implementation of surfactant enhanced aquifer remediation (SEAR), in which low interfacial tension surfactant formulations may lead to DNAPL migration into fine layers or previously uncontaminated regions of an aquifer.

  11. Interfacial layer in LaTbMnO/Nb-SrTiO heterojunction

    NASA Astrophysics Data System (ADS)

    Zhang, Y. T.; Wang, C. C.; Feng, X. M.; He, M.; Lu, H. B.

    2009-12-01

    In this work, we report the electrical transport and dielectric properties of the La 0.95Tb 0.05MnO 3/Nb-doped SrTiO 3 heterojunction fabricated by laser molecular beam epitaxy. The sample shows a grain-boundary like current-voltage (I-V) behavior and linear C-2-V ( C is capacitance) behavior in both forward and backward biases. These results are interpreted in terms of an interfacial layer which absorbs electrons from the film and substrate forming back-to-back Schottky barriers. Charge carriers trapped by the interfacial layer are found to follow an electric-field activated law. This work demonstrates the presence of the interfacial layer and indicates that this layer can play an active role in determining the properties of the heterojunction.

  12. The effect of interfacial layers on charge transport in organic solar cell

    NASA Astrophysics Data System (ADS)

    Mbuyise, Xolani G.; Tonui, Patrick; Mola, Genene Tessema

    2016-09-01

    The effect of interfacial buffer layers in organic photovoltaic cell (OPV) whose active layer is composed of poly(3 hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend was studied. The electrical properties of OPV devices produced with and without interfacial layers are compared and discussed in terms of measured parameters of the cells. The charge transport properties showed significant difference on the mobility and activation factor between the two types of device structures. The life time measurements in the unprotected conditions are also presented and discussed.

  13. An identification algorithm of model kinetic parameters of the interfacial layer growth in fiber composites

    NASA Astrophysics Data System (ADS)

    Zubov, V.; Lurie, S.; Solyaev, Y.

    2016-04-01

    This paper considers the identification algorithm of parameters included in a parabolic law that is often used to predict the time dependence of the thickness of the interfacial layers in the structure of composite materials based on a metal matrix. The incubation period of the process and the speed of reaction and pressure are taken into account. The proposed algorithm of identification is based on the introduction of a minimized objective function of a special kind. The problem of identification of unknown parameters in the parabolic law is formulated in a variational form. The authors of the paper have determined the desired parameters, under which the objective function has a minimum value. It is shown that on the basis of four known experimental values of the interfacial layer thickness, corresponding to different values of temperature, pressure and the time of the interfacial layer growth, it is possible to identified four model parameters. They are the activation energy, a pre-exponential parameter, the delay time of the start of the interfacial layer formation, and the parameter determining the pressure effect on the rate of interfacial layer growth. The stability of the proposed identification algorithm is also studied.

  14. Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

    SciTech Connect

    Sarpi, B.; Daineche, R.; Girardeaux, C.; Bertoglio, M.; Derivaux, F.; Vizzini, S.; Biberian, J. P.; Hemeryck, A.

    2015-01-12

    Using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, and low energy electron diffraction, we have studied the growth of Mg deposited on Si(100)-(2 × 1). Coverage from 0.05 monolayer (ML) to 3 ML was investigated at room temperature. The growth mode of the magnesium is a two steps process. At very low coverage, there is formation of an amorphous ultrathin silicide layer with a band gap of 0.74 eV, followed by a layer-by-layer growth of Mg on top of this silicide layer. Topographic images reveal that each metallic Mg layer is formed by 2D islands coalescence process on top of the silicide interfacial layer. During oxidation of the Mg monolayer, the interfacial silicide layer acts as diffusion barrier for the oxygen atoms with a decomposition of the silicide film to a magnesium oxide as function of O{sub 2} exposure.

  15. Effect of interfacial interactions on the thermal conductivity and interfacial thermal conductance in tungsten–graphene layered structure

    SciTech Connect

    Jagannadham, K.

    2014-09-01

    Graphene film was deposited by microwave plasma assisted deposition on polished oxygen free high conductivity copper foils. Tungsten–graphene layered film was formed by deposition of tungsten film by magnetron sputtering on the graphene covered copper foils. Tungsten film was also deposited directly on copper foil without graphene as the intermediate film. The tungsten–graphene–copper samples were heated at different temperatures up to 900 °C in argon atmosphere to form an interfacial tungsten carbide film. Tungsten film deposited on thicker graphene platelets dispersed on silicon wafer was also heated at 900 °C to identify the formation of tungsten carbide film by reaction of tungsten with graphene platelets. The films were characterized by scanning electron microscopy, Raman spectroscopy, and x-ray diffraction. It was found that tungsten carbide film formed at the interface upon heating only above 650 °C. Transient thermoreflectance signal from the tungsten film surface on the samples was collected and modeled using one-dimensional heat equation. The experimental and modeled results showed that the presence of graphene at the interface reduced the cross-plane effective thermal conductivity and the interfacial thermal conductance of the layer structure. Heating at 650 and 900 °C in argon further reduced the cross-plane thermal conductivity and interface thermal conductance as a result of formation nanocrystalline tungsten carbide at the interface leading to separation and formation of voids. The present results emphasize that interfacial interactions between graphene and carbide forming bcc and hcp elements will reduce the cross-plane effective thermal conductivity in composites.

  16. Visualization and characterization of interfacial polymerization layer formation.

    PubMed

    Zhang, Yali; Benes, Nieck E; Lammertink, Rob G H

    2015-01-21

    We present a microfluidic platform to visualize the formation of free-standing films by interfacial polymerization. A microfluidic device is fabricated, with an array of micropillars to stabilize an aqueous-organic interface that allows a direct observation of the films formation process via optical microscopy. Three different amines are selected to react with trimesoyl chloride: piperazine, JEFFAMINE(®)D-230, and an ammonium functionalized polyhedral oligomeric silsesquioxane. Tracking the formation of the free-standing films in time reveals strong effects of the characteristics of the amine precursor on the morphological evolution of the films. Piperazine exhibits a rapid reaction with trimesoyl chloride, forming a film up to 20 μm thick within half a minute. JEFFAMINE(®)D-230 displays much slower film formation kinetics. The location of the polymerization reaction was initially in the aqueous phase and then shifted into the organic phase. Our in situ real-time observations provide information on the kinetics and the changing location of the polymerization. This provides insights with important implications for fine-tuning of interfacial polymerizations for various applications.

  17. Mass spectrometry of interfacial layers during fast aqueous aerosol/ozone gas reactions of atmospheric interest

    NASA Astrophysics Data System (ADS)

    Enami, S.; Vecitis, C. D.; Cheng, J.; Hoffmann, M. R.; Colussi, A. J.

    2008-04-01

    The oxidations of sulfite and iodide in the interfacial layers of aqueous microdroplets exposed to O 3(g) for 1 ms are investigated by online mass spectrometry of the electrostatically ejected anions. S(IV) oxidation losses in Na 2SO 3 microdroplets are proportional to [S(IV)] [O 3(g)] up to ˜90% conversion. I - is more abundant than HSO3- in the interfacial layers of equimolar (Na 2SO 3 + NaI) microdroplets and ˜3 times more reactive than HSO3- toward O 3(aq) in bulk solution, but it is converted withminimalloss to I3- and IO3- plus a persistent ISO3- intermediate. These observations reveal unanticipated interfacial gradients, reactivity patterns and transport phenomena that had not been taken into account in previous treatments of fast gas-liquid reactions.

  18. Mechanisms governing the interfacial delamination of thermal barrier coating system with double ceramic layers

    NASA Astrophysics Data System (ADS)

    Xu, Rong; Fan, Xueling; Wang, T. J.

    2016-05-01

    A systematic study of factors affecting the interfacial delamination of thermal barrier coating system (TBCs) with double ceramic layers (DCL) is presented. Crack driving forces for delaminations at two weak interfaces are examined. The results show that a thicker outermost ceramic layer can induce dramatic increase in crack driving force and make the interface between two ceramic coatings become more prone to delamination. The behavior is shown to be more prominent in TBCs with stiffer outmost coating. The thickness ratio of two ceramic layers is an important parameter for controlling the failure mechanisms and determining the lifetime of DCL TBCs under inservice condition. By accounting for the influences of thickness ratio of two ceramic layers and interfacial fracture toughnesses of two involved interfaces, the fracture mechanism map of DCL TBCs has been constructed, in which different failure mechanisms are identified. The results quanlitatively agree with the aviliable experimental data.

  19. Optimization of residual stresses in MMC's through the variation of interfacial layer architectures and processing parameters

    NASA Technical Reports Server (NTRS)

    Pindera, Marek-Jerzy; Salzar, Robert S.

    1996-01-01

    The objective of this work was the development of efficient, user-friendly computer codes for optimizing fabrication-induced residual stresses in metal matrix composites through the use of homogeneous and heterogeneous interfacial layer architectures and processing parameter variation. To satisfy this objective, three major computer codes have been developed and delivered to the NASA-Lewis Research Center, namely MCCM, OPTCOMP, and OPTCOMP2. MCCM is a general research-oriented code for investigating the effects of microstructural details, such as layered morphology of SCS-6 SiC fibers and multiple homogeneous interfacial layers, on the inelastic response of unidirectional metal matrix composites under axisymmetric thermomechanical loading. OPTCOMP and OPTCOMP2 combine the major analysis module resident in MCCM with a commercially-available optimization algorithm and are driven by user-friendly interfaces which facilitate input data construction and program execution. OPTCOMP enables the user to identify those dimensions, geometric arrangements and thermoelastoplastic properties of homogeneous interfacial layers that minimize thermal residual stresses for the specified set of constraints. OPTCOMP2 provides additional flexibility in the residual stress optimization through variation of the processing parameters (time, temperature, external pressure and axial load) as well as the microstructure of the interfacial region which is treated as a heterogeneous two-phase composite. Overviews of the capabilities of these codes are provided together with a summary of results that addresses the effects of various microstructural details of the fiber, interfacial layers and matrix region on the optimization of fabrication-induced residual stresses in metal matrix composites.

  20. Nanoscopic characterization of the water vapor-salt interfacial layer reveals a unique biphasic adsorption process.

    PubMed

    Yang, Liu; He, Jianfeng; Shen, Yi; Li, Xiaowei; Sun, Jielin; Czajkowsky, Daniel M; Shao, Zhifeng

    2016-01-01

    Our quantitative understanding of water adsorption onto salt surfaces under ambient conditions is presently quite poor owing to the difficulties in directly characterizing this interfacial layer under these conditions. Here we determine the thickness of the interfacial layer on NaCl at different relative humidities (RH) based on a novel application of atomic force spectroscopy and capillary condensation theory. In particular, we take advantage of the microsecond-timescale of the capillary condensation process to directly resolve the magnitude of its contribution in the tip-sample interaction, from which the interfacial water thickness is determined. Further, to correlate this thickness with salt dissolution, we also measure surface conductance under similar conditions. We find that below 30% RH, there is essentially only the deposition of water molecules onto this surface, typical of conventional adsorption onto solid surfaces. However, above 30% RH, adsorption is simultaneous with the dissolution of ions, unlike conventional adsorption, leading to a rapid increase of surface conductance. Thus, water adsorption on NaCl is an unconventional biphasic process in which the interfacial layer not only exhibits quantitative differences in thickness but also qualitative differences in composition. PMID:27527905

  1. Nanoscopic characterization of the water vapor-salt interfacial layer reveals a unique biphasic adsorption process

    NASA Astrophysics Data System (ADS)

    Yang, Liu; He, Jianfeng; Shen, Yi; Li, Xiaowei; Sun, Jielin; Czajkowsky, Daniel M.; Shao, Zhifeng

    2016-08-01

    Our quantitative understanding of water adsorption onto salt surfaces under ambient conditions is presently quite poor owing to the difficulties in directly characterizing this interfacial layer under these conditions. Here we determine the thickness of the interfacial layer on NaCl at different relative humidities (RH) based on a novel application of atomic force spectroscopy and capillary condensation theory. In particular, we take advantage of the microsecond-timescale of the capillary condensation process to directly resolve the magnitude of its contribution in the tip-sample interaction, from which the interfacial water thickness is determined. Further, to correlate this thickness with salt dissolution, we also measure surface conductance under similar conditions. We find that below 30% RH, there is essentially only the deposition of water molecules onto this surface, typical of conventional adsorption onto solid surfaces. However, above 30% RH, adsorption is simultaneous with the dissolution of ions, unlike conventional adsorption, leading to a rapid increase of surface conductance. Thus, water adsorption on NaCl is an unconventional biphasic process in which the interfacial layer not only exhibits quantitative differences in thickness but also qualitative differences in composition.

  2. Nanoscopic characterization of the water vapor-salt interfacial layer reveals a unique biphasic adsorption process

    PubMed Central

    Yang, Liu; He, Jianfeng; Shen, Yi; Li, Xiaowei; Sun, Jielin; Czajkowsky, Daniel M.; Shao, Zhifeng

    2016-01-01

    Our quantitative understanding of water adsorption onto salt surfaces under ambient conditions is presently quite poor owing to the difficulties in directly characterizing this interfacial layer under these conditions. Here we determine the thickness of the interfacial layer on NaCl at different relative humidities (RH) based on a novel application of atomic force spectroscopy and capillary condensation theory. In particular, we take advantage of the microsecond-timescale of the capillary condensation process to directly resolve the magnitude of its contribution in the tip-sample interaction, from which the interfacial water thickness is determined. Further, to correlate this thickness with salt dissolution, we also measure surface conductance under similar conditions. We find that below 30% RH, there is essentially only the deposition of water molecules onto this surface, typical of conventional adsorption onto solid surfaces. However, above 30% RH, adsorption is simultaneous with the dissolution of ions, unlike conventional adsorption, leading to a rapid increase of surface conductance. Thus, water adsorption on NaCl is an unconventional biphasic process in which the interfacial layer not only exhibits quantitative differences in thickness but also qualitative differences in composition. PMID:27527905

  3. Interfacial Atomic Structure of Twisted Few-Layer Graphene.

    PubMed

    Ishikawa, Ryo; Lugg, Nathan R; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-02-18

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene.

  4. Interfacial Atomic Structure of Twisted Few-Layer Graphene

    PubMed Central

    Ishikawa, Ryo; Lugg, Nathan R.; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-01-01

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene. PMID:26888259

  5. Interfacial Layer Properties of a Polyaromatic Compound and its Role in Stabilizing Water-in-Oil Emulsions.

    PubMed

    Bi, Jiebin; Yang, Fan; Harbottle, David; Pensini, Erica; Tchoukov, Plamen; Simon, Sébastien; Sjöblom, Johan; Dabros, Tadek; Czarnecki, Jan; Liu, Qingxia; Xu, Zhenghe

    2015-09-29

    Physical properties of interfacial layers formed at the xylene-water interface by the adsorption of a polyaromatic organic compound, N-(1-hexylheptyl)-N'-(5-carbonylicpentyl) perylene-3,4,9,10-tetracarboxylic bisimide (in brief, C5Pe), were studied systematically. The deprotonation of the carboxylic group of C5Pe at alkaline pH made it highly interfacially active, significantly reducing the xylene-water interfacial tension. Thin liquid film experiments showed a continuous buildup of heterogeneous C5Pe interfacial layers at the xylene-water interfaces, which contributed to the formation of stable W/O emulsions. Continual accumulation and rearrangement of C5Pe aggregates at the xylene-water interface to form a thick layer was confirmed by in situ Brewster angle microscopy (BAM) and atomic force microscopy (AFM). The rheology measurement of the interfacial layer by double-wall ring interfacial rheometry under oscillatory shear showed that the interfacial layers formed from C5Pe solutions of high concentrations were substantially more elastic and rigid. The presence of elastically dominant interfacial layers of C5Pe led to the formation of stable water-in-xylene emulsions.

  6. Double-layer-gate architecture for few-hole GaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, D. Q.; Hamilton, A. R.; Farrer, I.; Ritchie, D. A.; Klochan, O.

    2016-08-01

    We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode {{Al}}x{{Ga}}1-x{As}/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling.

  7. Ultrafast Photoinduced Interfacial Proton Coupled Electron Transfer from CdSe Quantum Dots to 4,4'-Bipyridine.

    PubMed

    Chen, Jinquan; Wu, Kaifeng; Rudshteyn, Benjamin; Jia, Yanyan; Ding, Wendu; Xie, Zhao-Xiong; Batista, Victor S; Lian, Tianquan

    2016-01-27

    Pyridine and derivatives have been reported as efficient and selective catalysts for the electrochemical and photoelectrochemical reduction of CO2 to methanol. Although the catalytic mechanism remains a subject of considerable recent debate, most proposed models involve interfacial proton coupled electron transfer (PCET) to electrode-bound catalysts. We report a combined experimental and theoretical study of the photoreduction of 4,4'-bipyridium (bPYD) using CdSe quantum dots (QDs) as a model system for interfacial PCET. We observed ultrafast photoinduced PCET from CdSe QDs to form doubly protonated [bPYDH2](+•) radical cations at low pH (4-6). Through studies of the dependence of PCET rate on isotopic substitution, pH and bPYD concentration, the radical formation mechanism was identified to be a sequential interfacial electron and proton transfer (ET/PT) process with a rate-limiting pH independent electron transfer rate constant, kint, of 1.05 ± 0.13 × 10(10) s(-1) between a QD and an adsorbed singly protonated [bPYDH](+). Theoretical studies of the adsorption of [bPYDH](+) and methylviologen on QD surfaces revealed important effects of hydrogen bonding with the capping ligand (3-mercaptopropionic acid) on binding geometry and interfacial PCET. In the presence of sacrificial electron donors, this system was shown to be capable of generating [bPYDH2](+•) radical cations under continuous illumination at 405 nm with a steady-state photoreduction quantum yield of 1.1 ± 0.1% at pH 4. The mechanism of bPYD photoreduction reported in this work may provide useful insights into the catalytic roles of pyridine and pyridine derivatives in the electrochemical and photoelectrochemical reduction of CO2. PMID:26713752

  8. Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Bakke, Jonathan R.; Pickrahn, Katie L.; Brennan, Thomas P.; Bent, Stacey F.

    2011-09-01

    Investment into photovoltaic (PV) research has accelerated over the past decade as concerns over energy security and carbon emissions have increased. The types of PV technology in which the research community is actively engaged are expanding as well. This review focuses on the burgeoning field of atomic layer deposition (ALD) for photovoltaics. ALD is a self-limiting thin film deposition technique that has demonstrated usefulness in virtually every sector of PV technology including silicon, thin film, tandem, organic, dye-sensitized, and next generation solar cells. Further, the specific applications are not limited. ALD films have been deposited on planar and nanostructured substrates and on inorganic and organic devices, and vary in thickness from a couple of angstroms to over 100 nm. The uses encompass absorber materials, buffer layers, passivating films, anti-recombination shells, and electrode modifiers. Within the last few years, the interest in ALD as a PV manufacturing technique has increased and the functions of ALD have expanded. ALD applications have yielded fundamental understanding of how devices operate and have led to increased efficiencies or to unique architectures for some technologies. This review also highlights new developments in high throughput ALD, which is necessary for commercialization. As the demands placed on materials for the next generation of PV become increasingly stringent, ALD will evolve into an even more important method for research and fabrication of solar cell devices.

  9. Electrostatic modulation and enzymatic cross-linking of interfacial layers impacts gastrointestinal fate of multilayer emulsions.

    PubMed

    Zeeb, Benjamin; Weiss, Jochen; McClements, David Julian

    2015-08-01

    In this study, membrane properties were modulated using layer-by-layer electrostatic depositioning in combination with salt and/or enzyme treatment to control the gastrointestinal fate of emulsified oils. Lipid droplets coated by a single-layer of biopolymers (gelatin) were prepared by high pressure homogenization. Lipid droplets coated by a double-layer of biopolymers (gelatin-pectin) were prepared by electrostatically depositing sugar beet pectin on the gelatin-coated droplets. Laccase was added to the double-layer emulsions to covalently crosslink the adsorbed pectin molecules, whereas sodium chloride was added to modulate interfacial properties through electrostatic screening effects. Non-cross-linked and cross-linked double-layer emulsions (with and without salt) were then passed through a simulated gastrointestinal tract (GIT) that included mouth, gastric and intestinal phases. Free fatty acid release profiles suggested that the stability of the emulsified droplets within the GIT played a more important role in determining the rate and extent of lipid digestion than the initial interfacial layer properties.

  10. Effects of fiber and interfacial layer architectures on the thermoplastic response of metal matrix composites

    NASA Technical Reports Server (NTRS)

    Pindera, Marek-Jerzy; Freed, Alan D.; Arnold, Steven M.

    1992-01-01

    Examined here is the effect of fiber and interfacial layer morphologies on thermal fields in metal matrix composites (MMCs). A micromechanics model based on an arbitrarily layered concentric cylinder configuration is used to calculate thermal stress fields in MMCs subjected to spatially uniform temperature changes. The fiber is modelled as a layered material with isotropic or orthotropic elastic layers, whereas the surrounding matrix, including interfacial layers, is treated as a strain-hardening, elastoplastic, von Mises solid with temperature-dependent parameters. The solution to the boundary-value problem of an arbitrarily layered concentric cylinder under the prescribed thermal loading is obtained using the local/global stiffness matrix formulation originally developed for stress analysis of multilayered elastic media. Examples are provided that illustrate how the morphology of the SCS6 silicon carbide fiber and the use of multiple compliant layers at the fiber/matrix interface affect the evolution of residual stresses in SiC/Ti composites during fabrication cool-down.

  11. Electrostatic modulation and enzymatic cross-linking of interfacial layers impacts gastrointestinal fate of multilayer emulsions.

    PubMed

    Zeeb, Benjamin; Weiss, Jochen; McClements, David Julian

    2015-08-01

    In this study, membrane properties were modulated using layer-by-layer electrostatic depositioning in combination with salt and/or enzyme treatment to control the gastrointestinal fate of emulsified oils. Lipid droplets coated by a single-layer of biopolymers (gelatin) were prepared by high pressure homogenization. Lipid droplets coated by a double-layer of biopolymers (gelatin-pectin) were prepared by electrostatically depositing sugar beet pectin on the gelatin-coated droplets. Laccase was added to the double-layer emulsions to covalently crosslink the adsorbed pectin molecules, whereas sodium chloride was added to modulate interfacial properties through electrostatic screening effects. Non-cross-linked and cross-linked double-layer emulsions (with and without salt) were then passed through a simulated gastrointestinal tract (GIT) that included mouth, gastric and intestinal phases. Free fatty acid release profiles suggested that the stability of the emulsified droplets within the GIT played a more important role in determining the rate and extent of lipid digestion than the initial interfacial layer properties. PMID:25766826

  12. Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

    SciTech Connect

    Kim, Nam-Hui; Jung, Jinyong; Cho, Jaehun; You, Chun-Yeol; Han, Dong-Soo; Kim, June-Seo Swagten, Henk J. M.

    2015-10-05

    We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlO{sub x} and Ta/Pt/Co/AlO{sub x} structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy are significantly improved due to the better interface between heavy metal and ferromagnetic layer. From the frequency shift between Stokes- and anti-Stokes spin-waves, we successively obtain considerably larger iDM energy densities (D{sub max} = 1.65 ± 0.13 mJ/m{sup 2} at t{sub Co} = 1.35 nm) upon adding the Ta buffer layer, despite the nominally identical interface materials. Moreover, the energy density shows an inverse proportionality with the Co layer thickness, which is the critical clue that the observed iDMI is indeed originating from the interface between the Pt and Co layers.

  13. Investigation on the Microstructure, Interfacial IMC Layer, and Mechanical Properties of Cu/Sn-0.7Cu- xNi/Cu Solder Joints

    NASA Astrophysics Data System (ADS)

    Yang, Li; Ge, Jinguo; Zhang, Yaocheng; Dai, Jun; Liu, Haixiang; Xiang, Jicen

    2016-07-01

    Sn-0.7Cu- xNi composite solder has been fabricated via mechanical mixing of different weight percentages of Ni particles with Sn-0.7Cu solder paste, and the effect of the Ni concentration on the microstructure, wettability, and tensile properties of Cu/Sn-0.7Cu- xNi/Cu solder joints investigated. The results show that refined dot-shaped particles of intermetallic compounds (IMCs) are uniformly dispersed in a primary β-Sn matrix in the Cu/Sn-0.7Cu-(0.05-0.1)Ni/Cu solder joints. The interfacial IMC layer thickness increased slightly when adding Ni content to 0.05 wt.%, then rapidly when further increasing the Ni concentration to 0.4 wt.%. Excellent wettability with bright appearance was obtained for the Sn-0.7Cu-0.05Ni solder due to diminished interfacial tension. The tensile properties improved after adding Ni content to 0.05 wt.% due to the presence of the refined dot-like IMC particles, in agreement with theoretical predictions based on the combination of dispersion and grain-refinement strengthening mechanisms. Refined microstructure and enhanced mechanical properties were obtained for the Cu/Sn-0.7Cu-0.05Ni/Cu solder joint.

  14. Optimization of Residual Stresses in MMC's through Process Parameter Control and the use of Heterogeneous Compensating/Compliant Interfacial Layers. OPTCOMP2 User's Guide

    NASA Technical Reports Server (NTRS)

    Pindera, Marek-Jerzy; Salzar, Robert S.

    1996-01-01

    A user's guide for the computer program OPTCOMP2 is presented in this report. This program provides a capability to optimize the fabrication or service-induced residual stresses in unidirectional metal matrix composites subjected to combined thermomechanical axisymmetric loading by altering the processing history, as well as through the microstructural design of interfacial fiber coatings. The user specifies the initial architecture of the composite and the load history, with the constituent materials being elastic, plastic, viscoplastic, or as defined by the 'user-defined' constitutive model, in addition to the objective function and constraints, through a user-friendly data input interface. The optimization procedure is based on an efficient solution methodology for the inelastic response of a fiber/interface layer(s)/matrix concentric cylinder model where the interface layers can be either homogeneous or heterogeneous. The response of heterogeneous layers is modeled using Aboudi's three-dimensional method of cells micromechanics model. The commercial optimization package DOT is used for the nonlinear optimization problem. The solution methodology for the arbitrarily layered cylinder is based on the local-global stiffness matrix formulation and Mendelson's iterative technique of successive elastic solutions developed for elastoplastic boundary-value problems. The optimization algorithm employed in DOT is based on the method of feasible directions.

  15. The effect of skin-depth interfacial defect layer in perovskite solar cell

    NASA Astrophysics Data System (ADS)

    Gebremichael, Bizuneh; Mola, Genene Tessema

    2016-08-01

    The hole transport buffer layer (HTL) known as PEDOT:PSS is found to be sensitive to polar solvents often used in the preparation of solution-processed perovskite-based solar cell. We employed {CH}3 {NH}3 {PbI}3 perovskite absorber sandwiched between two charge transport layers to analyze the effect of precursor solvent. By introducing skin-depth interfacial defect layer (IDL) on PEDOT:PSS film we studied the overall performance of the devices using one-dimensional device simulator. Both enhanced conductivity and variations in valence band offset (VBO) of IDL were considered to analyze device performance. A power conversion efficiency (PCE) of the devices was found to grow by 35 % due to increased conductivity of IDL by a factor of 1000. Furthermore, we noted a drastic reduction in PCE of the device by reducing the work function of IDL by more than 0.3eV . The thickness of interfacial defect layer was also analyzed and found to decrease the PCE of the devices by 18 % for fourfold increase in IDL thickness. The analysis was remarkably reproduced the experimentally generated device parameters and will help to understand the underlying physical process in perovskite-based solar cell.

  16. Interfacially polymerized layers for oxygen enrichment: a method to overcome Robeson's upper-bound limit.

    PubMed

    Tsai, Ching-Wei; Tsai, Chieh; Ruaan, Ruoh-Chyu; Hu, Chien-Chieh; Lee, Kueir-Rarn

    2013-06-26

    Interfacial polymerization of four aqueous phase monomers, diethylenetriamine (DETA), m-phenylenediamine (mPD), melamine (Mela), and piperazine (PIP), and two organic phase monomers, trimethyl chloride (TMC) and cyanuric chloride (CC), produce a thin-film composite membrane of polymerized polyamide layer capable of O2/N2 separation. To achieve maximum efficiency in gas permeance and O2/N2 permselectivity, the concentrations of monomers, time of interfacial polymerization, number of reactive groups in monomers, and the structure of monomers need to be optimized. By controlling the aqueous/organic monomer ratio between 1.9 and 2.7, we were able to obtain a uniformly interfacial polymerized layer. To achieve a highly cross-linked layer, three reactive groups in both the aqueous and organic phase monomers are required; however, if the monomers were arranged in a planar structure, the likelihood of structural defects also increased. On the contrary, linear polymers are less likely to result in structural defects, and can also produce polymer layers with moderate O2/N2 selectivity. To minimize structural defects while maximizing O2/N2 selectivity, the planar monomer, TMC, containing 3 reactive groups, was reacted with the semirigid monomer, PIP, containing 2 reactive groups to produce a membrane with an adequate gas permeance of 7.72 × 10(-6) cm(3) (STP) s(-1) cm(-2) cm Hg(-1) and a high O2/N2 selectivity of 10.43, allowing us to exceed the upper-bound limit of conventional thin-film composite membranes. PMID:23731366

  17. Enhanced photoelectrochemical performance of quantum dot-sensitized TiO2 nanotube arrays with Al2O3 overcoating by atomic layer deposition.

    PubMed

    Zeng, Min; Peng, Xiange; Liao, Jianjun; Wang, Guizhen; Li, Yanfang; Li, Jianbao; Qin, Yong; Wilson, Joshua; Song, Aimin; Lin, Shiwei

    2016-06-29

    While TiO2 nanotube arrays cosensitized with CdS and PbS quantum dots can achieve water splitting under visible light excitation, the use of quantum dots is limited by the relatively slow interfacial hole transfer rate and low internal quantum efficiencies in the visible region. Al2O3 overcoating by atomic layer deposition (ALD) can drastically enhance the photoelectrochemical performance of the quantum dot-sensitized TiO2 nanotube arrays. 30 ALD cycles of the Al2O3 overlayer can achieve a good balance between surface coverage and charge transfer resistance. The resulting maximum photocurrent density of 5.19 mA cm(-2) under simulated solar illumination shows a 52 times improvement over the pure TiO2 nanotube arrays, and more significantly, a 60% enhancement over bare quantum dot-sensitized TiO2 nanotube arrays. The incident photon-to-current conversion efficiency can reach the record value of 83% at 350 nm and remain above 30% up to 450 nm. A systematic examination of the role of the ALD Al2O3 overlayer indicates that surface recombination passivation, catalytic improvement in interfacial charge transfer kinetics, and chemical stabilization might synergistically enhance the photoelectrochemical performance in the visible region. These results provide a physical insight into the facile surface treatment, which could be applied to develop and optimize high-performance photoelectrodes for artificial photosynthesis. PMID:27138558

  18. Self-coated interfacial layer at organic/inorganic phase for temporally controlling dual-drug delivery from electrospun fibers.

    PubMed

    Zhao, Xin; Zhao, Jingwen; Lin, Zhi Yuan William; Pan, Guoqing; Zhu, Yueqi; Cheng, Yingsheng; Cui, Wenguo

    2015-06-01

    Implantable tissue engineering scaffolds with temporally programmable multi-drug release are recognized as promising tools to improve therapeutic effects. A good example would be one that exhibits initial anti-inflammatory and long-term anti-tumor activities after tumor resection. In this study, a new strategy for self-coated interfacial layer on drug-loaded mesoporous silica nanoparticles (MSNs) based on mussel-mimetic catecholamine polymer (polydopamine, PDA) layer was developed between inorganic and organic matrix for controlling drug release. When the interface PDA coated MSNs were encapsulated in electrospun poly(L-lactide) (PLLA) fibers, the release rates of drugs located inside/outside the interfacial layer could be finely controlled, with short-term release of anti-inflammation ibuprofen (IBU) for 30 days in absence of interfacial interactions and sustained long-term release of doxorubicin (DOX) for 90 days in presence of interfacial interactions to inhibit potential tumor recurrence. The DOX@MSN-PDA/IBU/PLLA hybrid fibrous scaffolds were further found to inhibit proliferation of inflammatory macrophages and cancerous HeLa cells, while supporting the normal stromal fibroblast adhesion and proliferation at different release stages. These results have suggested that the interfacial obstruction layer at the organic/inorganic phase was able to control the release of drugs inside (slow)/outside (rapid) the interfacial layer in a programmable manner. We believe such interface polymer strategy will find applications in where temporally controlled multi-drug delivery is needed. PMID:25879640

  19. Effects of disorder state and interfacial layer on thermal transport in copper/diamond system

    NASA Astrophysics Data System (ADS)

    Sinha, V.; Gengler, J. J.; Muratore, C.; Spowart, J. E.

    2015-02-01

    The characterization of Cu/diamond interface thermal conductance (hc) along with an improved understanding of factors affecting it are becoming increasingly important, as Cu-diamond composites are being considered for electronic packaging applications. In this study, ˜90 nm thick Cu layers were deposited on synthetic and natural single crystal diamond substrates. In several specimens, a Ti-interface layer of thickness ≤3.5 nm was sputtered between the diamond substrate and the Cu top layer. The hc across Cu/diamond interfaces for specimens with and without a Ti-interface layer was determined using time-domain thermoreflectance. The hc is ˜2× higher for similar interfacial layers on synthetic versus natural diamond substrate. The nitrogen concentration of synthetic diamond substrate is four orders of magnitude lower than natural diamond. The difference in nitrogen concentration can lead to variations in disorder state, with a higher nitrogen content resulting in a higher level of disorder. This difference in disorder state potentially can explain the variations in hc. Furthermore, hc was observed to increase with an increase of Ti-interface layer thickness. This was attributed to an increased adhesion of Cu top layer with increasing Ti-interface layer thickness, as observed qualitatively in the current study.

  20. Effects of disorder state and interfacial layer on thermal transport in copper/diamond system

    SciTech Connect

    Sinha, V.; Gengler, J. J.; Muratore, C.; Spowart, J. E.

    2015-02-21

    The characterization of Cu/diamond interface thermal conductance (h{sub c}) along with an improved understanding of factors affecting it are becoming increasingly important, as Cu-diamond composites are being considered for electronic packaging applications. In this study, ∼90 nm thick Cu layers were deposited on synthetic and natural single crystal diamond substrates. In several specimens, a Ti-interface layer of thickness ≤3.5 nm was sputtered between the diamond substrate and the Cu top layer. The h{sub c} across Cu/diamond interfaces for specimens with and without a Ti-interface layer was determined using time-domain thermoreflectance. The h{sub c} is ∼2× higher for similar interfacial layers on synthetic versus natural diamond substrate. The nitrogen concentration of synthetic diamond substrate is four orders of magnitude lower than natural diamond. The difference in nitrogen concentration can lead to variations in disorder state, with a higher nitrogen content resulting in a higher level of disorder. This difference in disorder state potentially can explain the variations in h{sub c}. Furthermore, h{sub c} was observed to increase with an increase of Ti-interface layer thickness. This was attributed to an increased adhesion of Cu top layer with increasing Ti-interface layer thickness, as observed qualitatively in the current study.

  1. Hydrophobic and high adhesive polyaniline layer of rectangular microtubes fabricated by a modified interfacial polymerization

    NASA Astrophysics Data System (ADS)

    Zhou, Chuanqiang; Gong, Xiangxiang; Qu, Yun; Han, Jie

    2016-08-01

    A modified interfacial polymerization of aniline is developed to fabricate hydrophobic and adhesive polyaniline (PANI) layer of rectangular microtubes on the glass substrate. The modified method uses pentanol as an organic medium to dissolve aniline monomer, with the water film of oxidant and surfactant on the glass substrate as water phase. The effects of some synthetic parameters (such as monomer concentration, alcohol molecular structure and surfactant type) on the morphology of PANI layer are studied for better understanding the fabrication of PANI nanostructures on the film. The alcohol molecular structure plays key role for the supermolecular assembly of PANI chains into nanostructures, while the surfactant may direct the array and deposition of these nanostructures on the glass substrate. The formation reason of PANI rectangular sub-microtubes is roughly interpreted according to our previous works. Wettability experiment indicates that the as-prepared PANI layer exhibits excellent hydrophobicity and high adhesive properties to water drop.

  2. Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layers

    SciTech Connect

    Platen, W.; Schmutzler, H.; Kohl, D.; Brauchle, K.; Wolter, K.

    1988-07-01

    GaAs(110) faces with different preparations: ultrahigh vacuum (UHV) cleaved, polished and etched, polished and sputtered: are prepared as Schottky diodes by the deposition of Ag. Diodes based on UHV-cleaved faces do show homogeneously distributed EL2 and EL5 states in deep level transient spectroscopy (DLTS). On polished and etched samples an additional interface state (IS) distribution with a density of 9 x 10/sup 11/ eV/sup -1/ cm/sup -2/ at the DLTS maximum appears. These states can be caused by defects at the oxidic interfacial layer. Polishing and sputtering also evokes the IS distribution. The absence of a DLTS signal from metal-induced gap states (MIGS) which pin the Fermi level at 0.49 eV above the valence-band maximum is related to the absence of an interfacial layer in the UHV prepared Schottky diodes. The sputter process increases the electron density in a thin layer below the interface by an As excess. The corresponding smaller extent of the barrier causes an additional electron emission via tunneling processes from the IS distribution. Furthermore, a near-interface state, EL6 (V/sub Ga/-V/sub As/), shows up. Its concentration at the interface attains N/sub EL6/ = 2.5 x 10/sup 16/ cm/sup -3/ comparable to the shallow donor concentration.

  3. Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layers

    NASA Astrophysics Data System (ADS)

    Platen, W.; Schmutzler, H.-J.; Kohl, D.; Brauchle, K.-A.; Wolter, K.

    1988-07-01

    GaAs(110) faces with different preparations—ultrahigh vacuum (UHV) cleaved, polished and etched, polished and sputtered—are prepared as Schottky diodes by the deposition of Ag. Diodes based on UHV-cleaved faces do show homogeneously distributed EL2 and EL5 states in deep level transient spectroscopy (DLTS). On polished and etched samples an additional interface state (IS) distribution with a density of 9×1011 eV-1 cm-2 at the DLTS maximum appears. These states can be caused by defects at the oxidic interfacial layer. Polishing and sputtering also evokes the IS distribution. The absence of a DLTS signal from metal-induced gap states (MIGS) which pin the Fermi level at 0.49 eV above the valence-band maximum is related to the absence of an interfacial layer in the UHV prepared Schottky diodes. The sputter process increases the electron density in a thin layer below the interface by an As excess. The corresponding smaller extent of the barrier causes an additional electron emission via tunneling processes from the IS distribution. Furthermore, a near-interface state, EL6 (VGa-VAs), shows up. Its concentration at the interface attains NEL6 =2.5×1016 cm-3 comparable to the shallow donor concentration.

  4. Performance enhancement in inverted solar cells by interfacial modification of ZnO nanoparticle buffer layer.

    PubMed

    Ambade, Swapnil B; Ambade, Rohan B; Kim, Seojin; Park, Hanok; Yoo, Dong Jin; Leel, Soo-Hyoung

    2014-11-01

    Polymer solar cells (PSCs) have attracted increasing attention in recent years. The rapid progress and mounting interest suggest the feasibility of PSC commercialization. However, critical issues such as stability and the weak nature of their interfaces posses quite a challenge. In the context of improving stability, PSCs with inverted geometry consising of inorganic oxide layer acting as an n-buffer offer quite the panacea. Zinc oxide (ZnO) is one of the most preferred semiconducting wide band gap oxides as an efficient cathode layer that effectively extracts and transports photoelectrons from the acceptor to the conducting indium-doped tin oxide (ITO) due to its high conductivity and transparency. However, the existence of a back charge transfer from metal oxides to electron-donating conjugated polymer and poor contact with the bulk heterojunction (BHJ) active layer results in serious interfacial recombination and leads to relatively low photovoltaic performance. One approach to improving the performance and charge selectivity of these types of inverted devices consists of modifying the interface between the inorganic metal oxide (e.g., ZnO) and organic active layer using a sub-monolayer of interfacial materials (e.g., functional dyes). In this work, we demonstrate that the photovoltaic parameters of inverted solar cells comprising a thin overlayer of functional dyes over ZnO nanoparticle as an n-buffer layer are highly influenced by the anchoring groups they possess. While an inverted PSC containing an n-buffer of only ZnO exhibited an overall power conversion efficiency (PCE) of 2.87%, the devices with an interlayer of dyes containing functional cyano-carboxylic, cyano-cyano, and carboxylic groups exhibited PCE of 3.52%, 3.39%, and 3.21%, respectively, due to increased forward charge collection resulting from enhanced electronic coupling between the ZnO and BHJ active layers. PMID:25958563

  5. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

    PubMed Central

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L.; Zhang, Qianfan; Zhao, Weisheng

    2015-01-01

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM. PMID:26656721

  6. Non-blinking (Zn)CuInS/ZnS Quantum Dots Prepared by In Situ Interfacial Alloying Approach

    PubMed Central

    Zhang, Aidi; Dong, Chaoqing; Li, Liang; Yin, Jinjin; Liu, Heng; Huang, Xiangyi; Ren, Jicun

    2015-01-01

    Semiconductor quantum dots (QDs) are very important optical nanomaterials with a wide range of potential applications. However, blinking behavior of single QD is an intrinsic drawback for some biological and photoelectric applications based on single-particle emission. Herein we present a rational strategy for fabrication of non-blinking (Zn)CuInS/ZnS QDs in organic phase through in situ interfacial alloying approach. This new strategy includes three steps: synthesis of CuInS QDs, eliminating the interior traps of QDs by forming graded (Zn)CuInS alloyed QDs, modifying the surface traps of QDs by introducing ZnS shells onto (Zn)CuInS QDs using alkylthiols as sulfur source and surface ligands. The suppressed blinking mechanism was mainly attributed to modifying QDs traps from interior to exterior via a step-by-step modification. Non-blinking QDs show high quantum yield, symmetric emission spectra and excellent crystallinity, and will enable applications from biology to optoelectronics that were previously hindered by blinking behavior of traditional QDs. PMID:26458511

  7. Selective Probing of Gaseous Ammonia Using Red-Emitting Carbon Dots Based on an Interfacial Response Mechanism.

    PubMed

    Jiang, Bang-Ping; Zhou, Bo; Shen, Xing-Can; Yu, Yun-Xiang; Ji, Shi-Chen; Wen, Chang-Chun; Liang, Hong

    2015-12-21

    Solid-state fluorescence sensing is one of the most appealing detection techniques because of its simplicity and convenience in practical operation. Herein, we report the development of a red-emitting carbon dots (RCDs)-based material as a solid-state fluorescence sensor for the selective probing of gaseous ammonia. The RCDs were prepared by a low-cost, one-step carbonization method using sugar cane bagasse as the carbon precursor. The pristine RCDs were then directly coated on polyvinylidene fluoride membrane to produce a new fluorescence sensor capable of selectively distinguishing toxic gaseous ammonia from other analyte vapors through sensitive fluorescence quenching with a low detection limit. More importantly, the interfacial response mechanism occurring on the surface of the RCDs has been studied by X-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman measurements. The results indicate that fluorescence quenching in the RCDs might result from ammonia-induced Michael addition through insertion of N into the C=C group and deprotonation of the carboxyl group. To the best of our knowledge, this is the first report that provides clear insight into the mechanism of surface chemistry on CDs in the solid state. PMID:26514914

  8. Non-blinking (Zn)CuInS/ZnS Quantum Dots Prepared by In Situ Interfacial Alloying Approach

    NASA Astrophysics Data System (ADS)

    Zhang, Aidi; Dong, Chaoqing; Li, Liang; Yin, Jinjin; Liu, Heng; Huang, Xiangyi; Ren, Jicun

    2015-10-01

    Semiconductor quantum dots (QDs) are very important optical nanomaterials with a wide range of potential applications. However, blinking behavior of single QD is an intrinsic drawback for some biological and photoelectric applications based on single-particle emission. Herein we present a rational strategy for fabrication of non-blinking (Zn)CuInS/ZnS QDs in organic phase through in situ interfacial alloying approach. This new strategy includes three steps: synthesis of CuInS QDs, eliminating the interior traps of QDs by forming graded (Zn)CuInS alloyed QDs, modifying the surface traps of QDs by introducing ZnS shells onto (Zn)CuInS QDs using alkylthiols as sulfur source and surface ligands. The suppressed blinking mechanism was mainly attributed to modifying QDs traps from interior to exterior via a step-by-step modification. Non-blinking QDs show high quantum yield, symmetric emission spectra and excellent crystallinity, and will enable applications from biology to optoelectronics that were previously hindered by blinking behavior of traditional QDs.

  9. Significant enhancement of the power conversion efficiency for organic photovoltaic cells due to a P3HT pillar layer containing ZnSe quantum dots.

    PubMed

    Kim, Dae Hun; Lee, Young Hun; Lee, Dea Uk; Kim, Tae Whan; Kim, Sungwoo; Kim, Sang Wook

    2012-05-01

    High-efficiency organic photovoltaic (OPV) cells utilizing a poly(3-hexylthiophene) (P3HT) pillar layer containing ZnSe quantum dots (QDs) were fabricated by using a mixed solution method. Scanning electron microscopy and high-resolution transmission electron microscopy images showed that the ZnSe QDs were dispersed in the P3HT layer. The power conversion efficiency of the OPV cells with a P3HT pillar layer containing ZnSe QDs was as much as 100% higher than that of the OPV cells with a planar layer due to an enhancement of the photon-harvesting ability of the congregated P3HT particles containing ZnSe QDs and to an increase of the interfacial region for efficient charge transport.

  10. Effects of cathode electrolyte interfacial (CEI) layer on long term cycling of all-solid-state thin-film batteries

    NASA Astrophysics Data System (ADS)

    Wang, Ziying; Lee, Jungwoo Z.; Xin, Huolin L.; Han, Lili; Grillon, Nathanael; Guy-Bouyssou, Delphine; Bouyssou, Emilien; Proust, Marina; Meng, Ying Shirley

    2016-08-01

    All-solid-state lithium-ion batteries have the potential to not only push the current limits of energy density by utilizing Li metal, but also improve safety by avoiding flammable organic electrolyte. However, understanding the role of solid electrolyte - electrode interfaces will be critical to improve performance. In this study, we conducted long term cycling on commercially available lithium cobalt oxide (LCO)/lithium phosphorus oxynitride (LiPON)/lithium (Li) cells at elevated temperature to investigate the interfacial phenomena that lead to capacity decay. STEM-EELS analysis of samples revealed a previously unreported disordered layer between the LCO cathode and LiPON electrolyte. This electrochemically inactive layer grew in thickness leading to loss of capacity and increase of interfacial resistance when cycled at 80 °C. The stabilization of this layer through interfacial engineering is crucial to improve the long term performance of thin-film batteries especially under thermal stress.

  11. Effects of cathode electrolyte interfacial (CEI) layer on long term cycling of all-solid-state thin-film batteries

    NASA Astrophysics Data System (ADS)

    Wang, Ziying; Lee, Jungwoo Z.; Xin, Huolin L.; Han, Lili; Grillon, Nathanael; Guy-Bouyssou, Delphine; Bouyssou, Emilien; Proust, Marina; Meng, Ying Shirley

    2016-08-01

    All-solid-state lithium-ion batteries have the potential to not only push the current limits of energy density by utilizing Li metal, but also improve safety by avoiding flammable organic electrolyte. However, understanding the role of solid electrolyte - electrode interfaces will be critical to improve performance. In this study, we conducted long term cycling on commercially available lithium cobalt oxide (LCO)/lithium phosphorus oxynitride (LiPON)/lithium (Li) cells at elevated temperature to investigate the interfacial phenomena that lead to capacity decay. STEM-EELS analysis of samples revealed a previously unreported disordered layer between the LCO cathode and LiPON electrolyte. This electrochemically inactive layer grew in thickness leading to loss of capacity and increase of interfacial resistance when cycled at 80 °C. The stabilization of this layer through interfacial engineering is crucial to improve the long term performance of thin-film batteries especially under thermal stress.

  12. Interfacial charge transfer between CdTe quantum dots and Gram negative vs. Gram positive bacteria.

    SciTech Connect

    Dumas, E.; Gao, C.; Suffern, D.; Bradforth, S. E.; Dimitrejevic, N. M.; Nadeau, J. L.; McGill Univ.; Univ. of Southern California

    2010-01-01

    Oxidative toxicity of semiconductor and metal nanomaterials to cells has been well established. However, it may result from many different mechanisms, some requiring direct cell contact and others resulting from the diffusion of reactive species in solution. Published results are contradictory due to differences in particle preparation, bacterial strain, and experimental conditions. It has been recently found that C{sub 60} nanoparticles can cause direct oxidative damage to bacterial proteins and membranes, including causing a loss of cell membrane potential (depolarization). However, this did not correlate with toxicity. In this study we perform a similar analysis using fluorescent CdTe quantum dots, adapting our tools to make use of the particles fluorescence. We find that two Gram positive strains show direct electron transfer to CdTe, resulting in changes in CdTe fluorescence lifetimes. These two strains also show changes in membrane potential upon nanoparticle binding. Two Gram negative strains do not show these effects - nevertheless, they are over 10-fold more sensitive to CdTe than the Gram positives. We find subtoxic levels of Cd{sup 2+} release from the particles upon irradiation of the particles, but significant production of hydroxyl radicals, suggesting that the latter is a major source of toxicity. These results help establish mechanisms of toxicity and also provide caveats for use of certain reporter dyes with fluorescent nanoparticles which will be of use to anyone performing these assays. The findings also suggest future avenues of inquiry into electron transfer processes between nanomaterials and bacteria.

  13. Probing Interfacial Electronic States in CdSe Quantum Dots using Second Harmonic Generation Spectroscopy

    DOE PAGES

    Doughty, Benjamin L.; Ma, Yingzhong; Shaw, Robert W

    2015-01-07

    Understanding and rationally controlling the properties of nanomaterial surfaces is a rapidly expanding field of research due to the dramatic role they play on the optical and electronic properties vital to light harvesting, emitting and detection technologies. This information is essential to the continued development of synthetic approaches designed to tailor interfaces for optimal nanomaterial based device performance. In this work, closely spaced electronic excited states in model CdSe quantum dots (QDs) are resolved using second harmonic generation (SHG) spectroscopy, and the corresponding contributions from surface species to these states are assessed. Two distinct spectral features are observed in themore » SHG spectra, which are not readily identified in linear absorption and photoluminescence excitation spectra. These features include a weak band at 395 6 nm, which coincides with transitions to the 2S1/2 1Se state, and a much more pronounced band at 423 4 nm arising from electronic transitions to the 1P3/2 1Pe state. Chemical modification of the QD surfaces through oxidation resulted in disappearance of the SHG band corresponding to the 1P3/2 1Pe state, indicating prominent surface contributions. Signatures of deep trap states localized on the surfaces of the QDs are also observed. We further find that the SHG signal intensities depend strongly on the electronic states being probed and their relative surface contributions, thereby offering additional insight into the surface specificity of SHG signals from QDs.« less

  14. Probing Interfacial Electronic States in CdSe Quantum Dots using Second Harmonic Generation Spectroscopy

    SciTech Connect

    Doughty, Benjamin L.; Ma, Yingzhong; Shaw, Robert W

    2015-01-07

    Understanding and rationally controlling the properties of nanomaterial surfaces is a rapidly expanding field of research due to the dramatic role they play on the optical and electronic properties vital to light harvesting, emitting and detection technologies. This information is essential to the continued development of synthetic approaches designed to tailor interfaces for optimal nanomaterial based device performance. In this work, closely spaced electronic excited states in model CdSe quantum dots (QDs) are resolved using second harmonic generation (SHG) spectroscopy, and the corresponding contributions from surface species to these states are assessed. Two distinct spectral features are observed in the SHG spectra, which are not readily identified in linear absorption and photoluminescence excitation spectra. These features include a weak band at 395 6 nm, which coincides with transitions to the 2S1/2 1Se state, and a much more pronounced band at 423 4 nm arising from electronic transitions to the 1P3/2 1Pe state. Chemical modification of the QD surfaces through oxidation resulted in disappearance of the SHG band corresponding to the 1P3/2 1Pe state, indicating prominent surface contributions. Signatures of deep trap states localized on the surfaces of the QDs are also observed. We further find that the SHG signal intensities depend strongly on the electronic states being probed and their relative surface contributions, thereby offering additional insight into the surface specificity of SHG signals from QDs.

  15. Dynamics of interfacial layers-experimental feasibilities of adsorption kinetics and dilational rheology.

    PubMed

    Mucic, N; Javadi, A; Kovalchuk, N M; Aksenenko, E V; Miller, R

    2011-10-14

    Each experimental method has a certain range of application, and so do the instruments for measuring dynamic interfacial tension and dilational rheology. While the capillary pressure tensiometry provides data for the shortest adsorption times starting from milliseconds at liquid/gas and tens of milliseconds at liquid/liquid interfaces, the drop profile tensiometry allows measurements in a time window from seconds to many hours. Although both methods together cover a time range of about eight orders of magnitude (10(-3) s to 10(5) s), not all surfactants can be investigated with these techniques in the required concentration range. The same is true for studies of the dilational rheology. While drop profile tensiometry allows oscillations between 10(-3) Hz and 0.2 Hz, which can be complemented by measurements with capillary pressure oscillating drops and the capillary wave damping method (up to 10(3) Hz) these six orders of magnitude in frequency are often insufficient for a complete characterization of interfacial dilational relaxations of surfactant adsorption layers. The presented analysis provides a guide to select the most suitable experimental method for a given surfactant to be studied. The analysis is based on a diffusion controlled adsorption kinetics and a Langmuir adsorption model.

  16. Interfacial cyclic fatigue of atomic-layer-deposited alumina coatings on silicon thin films.

    PubMed

    Baumert, Eva K; Pierron, Olivier N

    2013-07-10

    A microresonator-based interfacial fatigue testing technique was used to investigate the subcritical delamination of atomic-layer-deposited alumina coatings along the sidewalls of deep-reactive-ion-etched monocrystalline silicon thin films. This technique ensures loading conditions relevant to microelectromechanical system devices, including kHz testing frequency and fully reversed cyclic stresses. Four different coating thicknesses (4.2, 12.6, 25, and 50 nm) were investigated in two environments (30 °C, 50% relative humidity (RH) and 80 °C, 90% RH). Fatigue damage, in the form of channel cracks and delamination of the alumina coating, was found to accumulate slowly over more than 1 × 10(8) cycles. The average delamination rates increase with increasing energy release rate amplitude for delamination, modeled with a power law relationship. In the harsher environment, the rates are roughly 1 order of magnitude higher. Additionally, a few tests under static load were conducted for which no delamination (or crack growth) occurred, demonstrating that the governing interfacial fatigue mechanism is cycle-dependent.

  17. Ultrathin two-dimensional atomic crystals as stable interfacial layer for improvement of lithium metal anode.

    PubMed

    Yan, Kai; Lee, Hyun-Wook; Gao, Teng; Zheng, Guangyuan; Yao, Hongbin; Wang, Haotian; Lu, Zhenda; Zhou, Yu; Liang, Zheng; Liu, Zhongfan; Chu, Steven; Cui, Yi

    2014-10-01

    Stable cycling of lithium metal anode is challenging due to the dendritic lithium formation and high chemical reactivity of lithium with electrolyte and nearly all the materials. Here, we demonstrate a promising novel electrode design by growing two-dimensional (2D) atomic crystal layers including hexagonal boron nitride (h-BN) and graphene directly on Cu metal current collectors. Lithium ions were able to penetrate through the point and line defects of the 2D layers during the electrochemical deposition, leading to sandwiched lithium metal between ultrathin 2D layers and Cu. The 2D layers afford an excellent interfacial protection of Li metal due to their remarkable chemical stability as well as mechanical strength and flexibility, resulting from the strong intralayer bonds and ultrathin thickness. Smooth Li metal deposition without dendritic and mossy Li formation was realized. We showed stable cycling over 50 cycles with Coulombic efficiency ∼97% in organic carbonate electrolyte with current density and areal capacity up to the practical value of 2.0 mA/cm(2)and 5.0 mAh/cm(2), respectively, which is a significant improvement over the unprotected electrodes in the same electrolyte.

  18. Electron Transfer as a Probe of the Interfacial Quantum Dot-Organic Molecule Interaction

    NASA Astrophysics Data System (ADS)

    Peterson, Mark D.

    This dissertation describes a set of experimental and theoretical studies of the interaction between small organic molecules and the surfaces of semiconductor nanoparticles, also called quantum dots (QDs). Chapter 1 reviews the literature on the influence of ligands on exciton relaxation dynamics following photoexcitation of semiconductor QDs, and describes how ligands promote or inhibit processes such as emission, nonradiative relaxation, and charge transfer to redox active adsorbates. Chapter 2 investigates the specific interaction of alkylcarboxylated viologen derivatives with CdS QDs, and shows how a combination of steady-state photoluminescence (PL) and transient absorption (TA) experiments can be used to reveal the specific binding geometry of redox active organic molecules on QD surfaces. Chapter 3 expands on Chapter 2 by using PL and TA to provide information about the mechanisms through which methyl viologen (MV 2+) associates with CdS QDs to form a stable QD/MV2+ complex, suggesting two chemically distinct reactions. We use our understanding of the QD/molecule interaction to design a drug delivery system in Chapter 4, which employs PL and TA experiments to show that conformational changes in a redox active adsorbate may follow electron transfer, "activating" a biologically inert Schiff base to a protein inhibitor form. The protein inhibitor limits cell motility and may be used to prevent tumor metastasis in cancer patients. Chapter 5 discusses future applications of QD/molecule redox couples with an emphasis on efficient multiple charge-transfer reactions -- a process facilitated by the high degeneracy of band-edge states in QDs. These multiple charge-transfer reactions may potentially increase the thermodynamic efficiency of solar cells, and may also facilitate the splitting of water into fuel. Multiple exciton generation procedures, multi-electron transfer experiments, and future directions are discussed.

  19. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    NASA Astrophysics Data System (ADS)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  20. Electric-field-induced interfacial instabilities of a soft elastic membrane confined between viscous layers.

    PubMed

    Dey, Mohar; Bandyopadhyay, Dipankar; Sharma, Ashutosh; Qian, Shizhi; Joo, Sang Woo

    2012-10-01

    We explore the electric-field-induced interfacial instabilities of a trilayer composed of a thin elastic film confined between two viscous layers. A linear stability analysis (LSA) is performed to uncover the growth rate and length scale of the different unstable modes. Application of a normal external electric field on such a configuration can deform the two coupled elastic-viscous interfaces either by an in-phase bending or an antiphase squeezing mode. The bending mode has a long-wave nature, and is present even at a vanishingly small destabilizing field. In contrast, the squeezing mode has finite wave-number characteristics and originates only beyond a threshold strength of the electric field. This is in contrast to the instabilities of the viscous films with multiple interfaces where both modes are found to possess long-wave characteristics. The elastic film is unstable by bending mode when the stabilizing forces due to the in-plane curvature and the elastic stiffness are strong and the destabilizing electric field is relatively weak. In comparison, as the electric field increases, a subdominant squeezing mode can also appear beyond a threshold destabilizing field. A dominant squeezing mode is observed when the destabilizing field is significantly strong and the elastic films are relatively softer with lower elastic modulus. In the absence of liquid layers, a free elastic film is also found to be unstable by long-wave bending and finite wave-number squeezing modes. The LSA asymptotically recovers the results obtained by the previous formulations where the membrane bending elasticity is approximately incorporated as a correction term in the normal stress boundary condition. Interestingly, the presence of a very weak stabilizing influence due to a smaller interfacial tension at the elastic-viscous interfaces opens up the possibility of fabricating submicron patterns exploiting the instabilities of a trilayer.

  1. From front contact to back contact in cadmium telluride/cadmium sulfide solar cells: Buffer layer and interfacial layer

    NASA Astrophysics Data System (ADS)

    Roussillon, Yann

    Cadmium telluride (CdTe) polycrystalline thin film solar cells, with their near optimum direct band-gap of 1.4 eV matching almost perfectly the sun radiation spectrum, are a strong contender as a less expensive alternative, among photovoltaic materials, than the more commonly used silicon-based cells. Polycrystalline solar cells are usually deposited over large areas. Such devices often exhibit strong fluctuations (nonuniformities) in electronic properties, which originate from deposition and post-deposition processes, and are detrimental to the device performance. Therefore their effects need to be constrained. A new approach in this work was, when a CdS/CdTe solar cell is exposed to light and immersed in a proper electrolyte, fluctuations in surface potential can drive electrochemical reactions which result in a nonuniform interfacial layer that could balance the original nonuniformity. This approach improved the device efficiency for CdS/CdTe photovoltaic devices from 1--3% to 11--12%. Cadmium sulfide (CdS), used as a window layer and heterojunction partner to CdTe, is electrically inactive and absorb light energies above its band-gap of 2.4 eV. Therefore, to maximize the device efficiency, a thin US layer needs to be used. However, more defects, such as pinholes, are likely to be present in the film, leading to shunts. A resistive transparent layer, called buffer layer, is therefore deposited before CdS. A key observation was that the open-circuit voltage (Voc) for cells made using a buffer layer was high, around 800 mV, similar to cells without buffer layer after Cu doping. The standard p-n junction theory cannot explain this phenomena, therefore an alternative junction mechanism, similar to metal-insulator-semiconductor devices, was developed. Furthermore, alternative Cu-free back-contacts were used in conjunction with a buffer layer. The Voc of the devices was found to be dependent of the back contact used. This change occurs as the back-contact junction

  2. Systematic investigation of organic photovoltaic cell charge injection/performance modulation by dipolar organosilane interfacial layers.

    PubMed

    Song, Charles Kiseok; White, Alicia C; Zeng, Li; Leever, Benjamin J; Clark, Michael D; Emery, Jonathan D; Lou, Sylvia J; Timalsina, Amod; Chen, Lin X; Bedzyk, Michael J; Marks, Tobin J

    2013-09-25

    With the goal of investigating and enhancing anode performance in bulk-heterojunction (BHJ) organic photovoltaic (OPV) cells, the glass/tin-doped indium oxide (ITO) anodes are modified with a series of robust silane-tethered bis(fluoroaryl)amines to form self-assembled interfacial layers (IFLs). The modified ITO anodes are characterized by contact angle measurements, X-ray reflectivity, ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, atomic force microscopy, and cyclic voltammetry. These techniques reveal the presence of hydrophobic amorphous monolayers of 6.68 to 9.76 Å thickness, and modified anode work functions ranging from 4.66 to 5.27 eV. Two series of glass/ITO/IFL/active layer/LiF/Al BHJ OPVs are fabricated with the active layer = poly(3-hexylthiophene):phenyl-C71-butyric acid methyl ester (P3HT:PC71BM) or poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)-carbonyl]thi-eno[3,4-b]thiophenediyl

  3. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

    PubMed Central

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

    2015-01-01

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance. PMID:26080437

  4. Power Enhancement of Lithium-Ion Batteries by a Graphene Interfacial Layer.

    PubMed

    Song, Young Il; An, Ja Hwa; Kim, Tae Yoo; Lee, Jung Woo; Yoo, Young Zo; Suh, Su Jeong; Kim, Sung-Soo

    2015-11-01

    We achieved a method for power enhancement of heavy-duty lithium-ion batteries (LIBs) by synthesizing a graphene interfacial layer onto the anode copper current collector (ACCC). We tested fabricated coin cells, which used either 35-μm-thick rolled pristine copper foil or graphene synthesized onto the pristine copper foil for power output estimation of the LIBs. We observed the copper surface morphology with a scanning electron microscope (SEM). Raman spectroscopy was used to measure the bonding characteristics and estimate the layers of graphene films. In addition, transmittance and electrical resistance were measured by ultra-violet visible near-infrared spectroscopy (UV-Vis IR) and 4 point probe surface resistance measurement. The graphene films on polyethylene terephthalate (PET) substrate obtained a transmittance of 97.5% and sheet resistance of 429 Ω/square. Power enhancement performances was evaluated using LIB coin cells. After 5C current discharge rate of -1.7 A/g reversible capacity of 293 mAh/g and 326 mAh/g were obtained for pristine and synthesized graphene anode current collectors, respectively. The graphene synthesized onto the ACCC showed superior power performance. The results presented herein demonstrate a power enhancement of LIBs by a decrease in electron flow resistivity between active materials and the ACCC and removal of the native oxide layer on the anode copper surface using high quality graphene synthesized onto the ACCC. PMID:26726638

  5. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

    PubMed

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2015-06-30

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

  6. The role of interfacial water layer in atmospherically relevant charge separation

    NASA Astrophysics Data System (ADS)

    Bhattacharyya, Indrani

    Charge separation at interfaces is important in various atmospheric processes, such as thunderstorms, lightning, and sand storms. It also plays a key role in several industrial processes, including ink-jet printing and electrostatic separation. Surprisingly, little is known about the underlying physics of these charging phenomena. Since thin films of water are ubiquitous, they may play a role in these charge separation processes. This talk will focus on the experimental investigation of the role of a water adlayer in interfacial charging, with relevance to meteorologically important phenomena, such as atmospheric charging due to wave actions on oceans and sand storms. An ocean wave generates thousands of bubbles, which upon bursting produce numerous large jet droplets and small film droplets that are charged. In the 1960s, Blanchard showed that the jet droplets are positively charged. However, the charge on the film droplets was not known. We designed an experiment to exclusively measure the charge on film droplets generated by bubble bursting on pure water and aqueous salt solution surfaces. We measured their charge to be negative and proposed a model where a slight excess of hydroxide ions in the interfacial water layer is responsible for generating these negatively charged droplets. The findings from this research led to a better understanding of the ionic disposition at the air-water interface. Sand particles in a wind-blown sand layer, or 'saltation' layer, become charged due to collisions, so much so, that it can cause lightning. Silica, being hydrophilic, is coated with a water layer even under low-humidity conditions. To investigate the importance of this water adlayer in charging the silica surfaces, we performed experiments to measure the charge on silica surfaces due to contact and collision processes. In case of contact charging, the maximum charge separation occurred at an optimum relative humidity. On the contrary, in collisional charging process, no

  7. Specific effects of Ca(2+) ions and molecular structure of β-lactoglobulin interfacial layers that drive macroscopic foam stability.

    PubMed

    Braunschweig, Björn; Schulze-Zachau, Felix; Nagel, Eva; Engelhardt, Kathrin; Stoyanov, Stefan; Gochev, Georgi; Khristov, Khr; Mileva, Elena; Exerowa, Dotchi; Miller, Reinhard; Peukert, Wolfgang

    2016-07-01

    β-Lactoglobulin (BLG) adsorption layers at air-water interfaces were studied in situ with vibrational sum-frequency generation (SFG), tensiometry, surface dilatational rheology and ellipsometry as a function of bulk Ca(2+) concentration. The relation between the interfacial molecular structure of adsorbed BLG and the interactions with the supporting electrolyte is additionally addressed on higher length scales along the foam hierarchy - from the ubiquitous air-water interface through thin foam films to macroscopic foam. For concentrations <1 mM, a strong decrease in SFG intensity from O-H stretching bands and a slight increase in layer thickness and surface pressure are observed. A further increase in Ca(2+) concentrations above 1 mM causes an apparent change in the polarity of aromatic C-H stretching vibrations from interfacial BLG which we associate to a charge reversal at the interface. Foam film measurements show formation of common black films at Ca(2+) concentrations above 1 mM due to considerable decrease of the stabilizing electrostatic disjoining pressure. These observations also correlate with a minimum in macroscopic foam stability. For concentrations >30 mM Ca(2+), micrographs of foam films show clear signatures of aggregates which tend to increase the stability of foam films. Here, the interfacial layers have a higher surface dilatational elasticity. In fact, macroscopic foams formed from BLG dilutions with high Ca(2+) concentrations where aggregates and interfacial layers with higher elasticity are found, showed the highest stability with much smaller bubble sizes.

  8. Analytical and modeling investigations of volume fraction of interfacial layers around ellipsoidal aggregate particles in multiphase materials

    NASA Astrophysics Data System (ADS)

    Xu, W. X.; Chen, H. S.

    2013-01-01

    The determination of the volume fraction of interfacial layers is very significant for assessing the quantitative relationship between the microstructure and macroscopic physical properties of complex multiphase materials. In this work, based on a three-phase composite structure, an approximate analytical model for the volume fraction of interfacial layers around ellipsoidal aggregate particles is presented in detail. To verify the accuracy and reliability of the derived analytical model, a numerical model is introduced by means of random packing of polydispersed ellipsoidal aggregate particles, in which the relative spatial position between an arbitrary point and an ellipsoidal particle is precisely and conveniently determined. With the analytical and numerical models applied, the dependence of the volume fraction of interfacial layers on various factors, such as the particle shape, the volume fraction and the maximum particle size of aggregates, and the thickness of the interfacial layers, is evaluated. Furthermore, the results from the analytical model and the numerical model with these factors are compared. It is found that the theoretical results are favorably consistent with the simulated results.

  9. Efficient, Air-Stable Bulk Heterojunction Polymer Solar Cells Using MoOx as the Anode Interfacial Layer

    SciTech Connect

    Sun, Yanming; Takacs, Christopher J.; Cowan, Sarah R.; Seo, Jung Hwa; Gong, Xiong; Roy, Anshuman; Heeger, Alan J.

    2011-04-05

    The use of molybdenum oxide as the anode interfacial layer in conventional bulk heterojunction polymer solar cells leads to an improved power conversion efficiency and also dramatically increases the device stability. This indicates that the engineering of improved anode interface materials is an important method by which to fabricate efficient and stable polymer solar cells.

  10. Improved efficiency of P3HT:PCBM solar cells by incorporation of silver oxide interfacial layer

    NASA Astrophysics Data System (ADS)

    Das, Sayantan; Alford, T. L.

    2014-07-01

    In recent years, a substantial amount of research has been focused on identifying suitable interfacial layers in organic light-emitting diodes and organic solar cells which has efficient charge transport properties. In this work, a very thin layer of AgOx is deposited on top of the ITO layer along with PEDOT:PSS and is observed that the solar cells having the AgOx interfacial layer showed a 28% increase in power conversion efficiency in comparison to that of the control cell. The enhancement in efficiency has been ascribed to improvements in fill factor as well as the increase in shunt resistance and decrease in the series resistance of the solar cells. An equivalent circuit model is also provided to understand the changes in the series and shunt resistances in the AgOx modified devices.

  11. A comparison between semi-spheroid- and dome-shaped quantum dots coupled to wetting layer

    SciTech Connect

    Shahzadeh, Mohammadreza; Sabaeian, Mohammad

    2014-06-15

    During the epitaxial growth method, self-assembled semi-spheroid-shaped quantum dots (QDs) are formed on the wetting layer (WL). However for sake of simplicity, researchers sometimes assume semi-spheroid-shaped QDs to be dome-shaped (hemisphere). In this work, a detailed and comprehensive study on the difference between electronic and transition properties of dome- and semi-spheroid-shaped quantum dots is presented. We will explain why the P-to-S intersubband transition behaves the way it does. The calculated results for intersubband P-to-S transition properties of quantum dots show two different trends for dome-shaped and semi-spheroid-shaped quantum dots. The results are interpreted using the probability of finding electron inside the dome/spheroid region, with emphasis on the effects of wetting layer. It is shown that dome-shaped and semi-spheroid-shaped quantum dots feature different electronic and transition properties, arising from the difference in lateral dimensions between dome- and semi-spheroid-shaped QDs. Moreover, an analogy is presented between the bound S-states in the quantum dots and a simple 3D quantum mechanical particle in a box, and effective sizes are calculated. The results of this work will benefit researchers to present more realistic models of coupled QD/WL systems and explain their properties more precisely.

  12. Structure of DPPC-hyaluronan interfacial layers - effects of molecular weight and ion composition.

    PubMed

    Wieland, D C Florian; Degen, Patrick; Zander, Thomas; Gayer, Sören; Raj, Akanksha; An, Junxue; Dėdinaitė, Andra; Claesson, Per; Willumeit-Römer, Regine

    2016-01-21

    Hyaluronan and phospholipids play an important role in lubrication in articular joints and provide in combination with glycoproteins exceptionally low friction coefficients. We have investigated the structural organization of 1,2-dipalmitoyl-sn-glycero-3-phosphocholine (DPPC) Langmuir layers at the solution-air interface at different length scales with respect to the adsorption of hyaluronan (HA). This allows us to assemble a comprehensive picture of the adsorption and the resulting structures, and how they are affected by the molecular weight of HA and the presence of calcium ions. Brewster angle microscopy and grazing incident diffraction were used to determine the lateral structure at the micro- and macro scale. The data reveals an influence of HA on both the macro and micro structure of the DPPC Langmuir layer, and that the strength of this effect increases with decreasing molecular weight of HA and in presence of calcium ions. Furthermore, from X-ray reflectivity measurements we conclude that HA adsorbs to the hydrophilic part of DPPC, but data also suggest that two types of interfacial structures are formed at the interface. We argue that hydrophobic forces and electrostatic interactions play important rules for the association between DPPC and HA. Surface pressure area isotherms were used to determine the influence of HA on the phase behavior of DPPC while electrophoretic mobility measurements were used to gain insight into the binding of calcium ions to DPPC vesicles and hyaluronan.

  13. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect

    Prestat, E. Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A.

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  14. Interface investigation of the alcohol-/water-soluble conjugated polymer PFN as cathode interfacial layer in organic solar cells

    NASA Astrophysics Data System (ADS)

    Zhong, Shu; Wang, Rui; Ying Mao, Hong; He, Zhicai; Wu, Hongbin; Chen, Wei; Cao, Yong

    2013-09-01

    In this work, in situ ultraviolet photoelectron spectroscopy measurements were used to investigate the working mechanism of an alcohol-/water-soluble conjugated polymer poly [(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode interfacial layer in organic solar cells from the view of interfacial energy level alignment. Fullerene (C60) was chosen as the model acceptor material in contact with PFN as well as two other cathode interfacial layers ZnO and TiO2 in the configuration of an inverted solar cell structure. Significant charge transfer between PFN modified ITO (indium tin oxide) electrode and C60 is observed due to the low work function of PFN. This results in the Fermi level of the substrate pinned very close to the lowest unoccupied molecular orbital of C60 as well as an additional electric field at the cathode/acceptor interface. Both of them facilitate the electron extraction from the acceptor C60 to the ITO cathode, as confirmed by the electrical measurements of the electron-only devices with PFN modification. The better electron extraction originated from the Fermi level pinning and the additional interface electric field are believed to contribute to the efficiency enhancement of the inverted organic solar cells employing PFN as cathode interfacial layer.

  15. Probing the Interfacial Interaction in Layered-Carbon-Stabilized Iron Oxide Nanostructures: A Soft X-ray Spectroscopic Study.

    PubMed

    Zhang, Hui; Liu, Jinyin; Zhao, Guanqi; Gao, Yongjun; Tyliszczak, Tolek; Glans, Per-Anders; Guo, Jinghua; Ma, Ding; Sun, Xu-Hui; Zhong, Jun

    2015-04-22

    We have stabilized the iron oxide nanoparticles (NPs) of various sizes on layered carbon materials (Fe-oxide/C) that show excellent catalytic performance. From the characterization of X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES), scanning transmission X-ray microscopy (STXM) and X-ray magnetic circular dichroism spectroscopy (XMCD), a strong interfacial interaction in the Fe-oxide/C hybrids has been observed between the small iron oxide NPs and layered carbon in contrast to the weak interaction in the large iron oxide NPs. The interfacial interaction between the NPs and layered carbon is found to link with the improved catalytic performance. In addition, the Fe L-edge XMCD spectra show that the large iron oxide NPs are mainly γ-Fe2O3 with a strong ferromagnetic property, whereas the small iron oxide NPs with strong interfacial interaction are mainly α-Fe2O3 or amorphous Fe2O3 with a nonmagnetic property. The results strongly suggest that the interfacial interaction plays a key role for the catalytic performance, and the experimental findings may provide guidance toward rational design of high-performance catalysts. PMID:25839786

  16. Probing the Interfacial Interaction in Layered-Carbon-Stabilized Iron Oxide Nanostructures: A Soft X-ray Spectroscopic Study.

    PubMed

    Zhang, Hui; Liu, Jinyin; Zhao, Guanqi; Gao, Yongjun; Tyliszczak, Tolek; Glans, Per-Anders; Guo, Jinghua; Ma, Ding; Sun, Xu-Hui; Zhong, Jun

    2015-04-22

    We have stabilized the iron oxide nanoparticles (NPs) of various sizes on layered carbon materials (Fe-oxide/C) that show excellent catalytic performance. From the characterization of X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES), scanning transmission X-ray microscopy (STXM) and X-ray magnetic circular dichroism spectroscopy (XMCD), a strong interfacial interaction in the Fe-oxide/C hybrids has been observed between the small iron oxide NPs and layered carbon in contrast to the weak interaction in the large iron oxide NPs. The interfacial interaction between the NPs and layered carbon is found to link with the improved catalytic performance. In addition, the Fe L-edge XMCD spectra show that the large iron oxide NPs are mainly γ-Fe2O3 with a strong ferromagnetic property, whereas the small iron oxide NPs with strong interfacial interaction are mainly α-Fe2O3 or amorphous Fe2O3 with a nonmagnetic property. The results strongly suggest that the interfacial interaction plays a key role for the catalytic performance, and the experimental findings may provide guidance toward rational design of high-performance catalysts.

  17. Interfacial bonding stabilizes rhodium and rhodium oxide nanoparticles on layered Nb oxide and Ta oxide supports.

    PubMed

    Strayer, Megan E; Binz, Jason M; Tanase, Mihaela; Shahri, Seyed Mehdi Kamali; Sharma, Renu; Rioux, Robert M; Mallouk, Thomas E

    2014-04-16

    Metal nanoparticles are commonly supported on metal oxides, but their utility as catalysts is limited by coarsening at high temperatures. Rhodium oxide and rhodium metal nanoparticles on niobate and tantalate supports are anomalously stable. To understand this, the nanoparticle-support interaction was studied by isothermal titration calorimetry (ITC), environmental transmission electron microscopy (ETEM), and synchrotron X-ray absorption and scattering techniques. Nanosheets derived from the layered oxides KCa2Nb3O10, K4Nb6O17, and RbTaO3 were compared as supports to nanosheets of Na-TSM, a synthetic fluoromica (Na0.66Mg2.68(Si3.98Al0.02)O10.02F1.96), and α-Zr(HPO4)2·H2O. High surface area SiO2 and γ-Al2O3 supports were also used for comparison in the ITC experiments. A Born-Haber cycle analysis of ITC data revealed an exothermic interaction between Rh(OH)3 nanoparticles and the layered niobate and tantalate supports, with ΔH values in the range -32 kJ·mol(-1) Rh to -37 kJ·mol(-1) Rh. In contrast, the interaction enthalpy was positive with SiO2 and γ-Al2O3 supports. The strong interfacial bonding in the former case led to "reverse" ripening of micrometer-size Rh(OH)3, which dispersed as 0.5 to 2 nm particles on the niobate and tantalate supports. In contrast, particles grown on Na-TSM and α-Zr(HPO4)2·H2O nanosheets were larger and had a broad size distribution. ETEM, X-ray absorption spectroscopy, and pair distribution function analyses were used to study the growth of supported nanoparticles under oxidizing and reducing conditions, as well as the transformation from Rh(OH)3 to Rh nanoparticles. Interfacial covalent bonding, possibly strengthened by d-electron acid/base interactions, appear to stabilize Rh(OH)3, Rh2O3, and Rh nanoparticles on niobate and tantalate supports. PMID:24654835

  18. Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer

    SciTech Connect

    Pavlova, E. D. Gorshkov, A. P.; Bobrov, A. I.; Malekhonova, N. V.; Zvonkov, B. N.

    2013-12-15

    Using high-resolution transmission electron microscopy and photoelectric spectroscopy methods, the effect of Mn δ layer embedding and GaAs coating layer growth techniques in structures with In(Ga)As/GaAs quantum dots and wells on their structural and optoelectronic characteristics is studied. It is shown that the low-temperature GaAs coating layer in a structure with a Mn δ layer is structurally inhomogeneous and can cause a decrease in the quantum-dot photosensitivity.

  19. Highly efficient multiple-layer CdS quantum dot sensitized III-V solar cells.

    PubMed

    Lin, Chien-Chung; Han, Hau-Vei; Chen, Hsin-Chu; Chen, Kuo-Ju; Tsai, Yu-Lin; Lin, Wein-Yi; Kuo, Hao-Chung; Yu, Peichen

    2014-02-01

    In this review, the concept of utilization of solar spectrum in order to increase the solar cell efficiency is discussed. Among the three mechanisms, down-shifting effect is investigated in detail. Organic dye, rare-earth minerals and quantum dots are three most popular down-shift materials. While the enhancement of solar cell efficiency was not clearly observed in the past, the advances in quantum dot fabrication have brought strong response out of the hybrid platform of a quantum dot solar cell. A multiple layer structure, including PDMS as the isolation layer, is proposed and demonstrated. With the help of pulse spray system, precise control can be achieved and the optimized concentration can be found.

  20. Electrostatically transparent graphene quantum-dot trap layers for efficient nonvolatile memory

    SciTech Connect

    Kim, Young Rae; Jo, Yong Eun; Sung, Yeo Hyun; Won, Ui Yeon; Shin, Yong Seon; Kang, Won Tae; Yu, Woo Jong E-mail: micco21@skku.edu; Lee, Young Hee E-mail: micco21@skku.edu

    2015-03-09

    In this study, we have demonstrated nonvolatile memory devices using graphene quantum-dots (GQDs) trap layers with indium zinc oxide (IZO) semiconductor channel. The Fermi-level of GQD was effectively modulated by tunneling electrons near the Dirac point because of limited density of states and weak electrostatic screening in monolayer graphene. As a result, large gate modulation was driven in IZO channel to achieve a subthreshold swing of 5.21 V/dec (300 nm SiO{sub 2} gate insulator), while Au quantum-dots memory shows 15.52 V/dec because of strong electrostatic screening in metal quantum-dots. Together, discrete charge traps of GQDs enable stable performance in the endurance test beyond 800 cycles of programming and erasing. Our study suggests the exciting potential of GQD trap layers to be used for a highly promising material in non-volatile memory devices.

  1. Effects of interfacial layer structures on crystal structural properties of ZnO films

    SciTech Connect

    Park, J. S.; Minegishi, T.; Lee, S. H.; Im, I. H.; Park, S. H.; Hanada, T.; Goto, T.; Cho, M. W.; Yao, T.; Hong, S. K.; Chang, J. H.

    2008-01-15

    Single crystalline ZnO films were grown on Cr compound buffer layers on (0001) Al{sub 2}O{sub 3} substrates by plasma assisted molecular beam epitaxy. In terms of lattice misfit reduction between ZnO and substrate, the CrN and Cr{sub 2}O{sub 3}/CrN buffers are investigated. The structural and optical qualities of ZnO films suggest the feasibility of Cr compound buffers for high-quality ZnO films growth on (0001) Al{sub 2}O{sub 3} substrates. Moreover, the effects of interfacial structures on selective growth of different polar ZnO films are investigated. Zn-polar ZnO films are grown on the rocksalt CrN buffer and the formation of rhombohedral Cr{sub 2}O{sub 3} results in the growth of O-polar films. The possible mechanism of polarity conversion is proposed. By employing the simple patterning and regrowth procedures, a periodical polarity converted structure in lateral is fabricated. The periodical change of the polarity is clearly confirmed by the polarity sensitive piezo response microscope images and the opposite hysteretic characteristic of the piezo response curves, which are strict evidences for the validity of the polarity controlling method as well as the successful fabrication of the periodical polarity controlled ZnO structure.

  2. Self-Doping, O2-Stable, n-Type Interfacial Layer for Organic Electronics

    SciTech Connect

    Reilly, T. H. III; Hains, A. W.; Chen, H. Y.; Gregg, B. A.

    2012-04-01

    Solid films of a water-soluble dicationic perylene diimide salt, perylene bis(2-ethyltrimethylammonium hydroxide imide), Petma{sup +}OH{sup -}, are strongly doped n-type by dehydration and reversibly de-doped by hydration. The hydrated films consist almost entirely of the neutral perylene diimide, PDI, while the dehydrated films contain {approx}50% PDI anions. The conductivity increases by five orders of magnitude upon dehydration, probably limited by film roughness, while the work function decreases by 0.74 V, consistent with an n-type doping density increase of {approx}12 orders of magnitude. Remarkably, the PDI anions are stable in dry air up to 120 C. The work function of the doped film, {phi} (3.96 V vs. vacuum), is unusually negative for an O{sub 2}-stable contact. Petma{sup +} OH{sup -} is also characterized as an interfacial layer, IFL, in two different types of organic photovoltaic cells. Results are comparable to state of the art cesium carbonate IFLs, but may improve if film morphology can be better controlled. The films are stable and reversible over many months in air and light. The mechanism of this unusual self-doping process may involve the change in relative potentials of the ions in the film caused by their deshielding and compaction as water is removed, leading to charge transfer when dry.

  3. Enhancing the performance of polymer photovoltaic cells by using an alcohol soluble fullerene derivative as the interfacial layer.

    PubMed

    Mei, Qiang; Li, Cuihong; Gong, Xue; Lu, Heng; Jin, Enquan; Du, Chun; Lu, Zhen; Jiang, Li; Meng, Xiangyue; Wang, Chunru; Bo, Zhishan

    2013-08-28

    Alcohol soluble fullerene derivative (FN-C60) has been synthesized and used as a cathode interfacial layer for high-efficiency polymer solar cells (PSCs). To examine the function of the FN-C60 interfacial layer, polymer solar cells were fabricated with blends of P3:PC71BM, HXS-1:PC71BM, PDFCDTBT:PC71BM, and PDPQTBT:PC71BM as the active layer. In comparison to the bare Al electrode, power conversion efficiencies (PCEs) of P3:PC71BM, HXS-1:PC71BM, PDFCDTBT:PC71BM, and PDPQTBT:PC71BM based PSCs were increased from 3.50 to 4.64%, 4.69 to 5.25%, 2.70 to 4.60%, and 1.52 to 2.29%, respectively, when FN-C60/Al was used as the electrode. Moreover, the overall photovoltaic performances of PSCs with the FN-C60/Al electrode were better than those of cells with LiF/Al electrode, indicating that FN-C60 is a potential interfacial layer material to replace LiF.

  4. Quantum dots protected from oxidative attack using alumina shells synthesized by atomic layer deposition.

    PubMed

    Yin, B; Sadtler, B; Berezin, M Y; Thimsen, E

    2016-09-25

    Applications of luminescent quantum dots require the materials to be stable under a wide range of temperatures, photon fluxes and chemical environments. In this work, we demonstrate that Al2O3 shells synthesized by atomic layer deposition on films of CdTe quantum dots are effective to prevent chemical degradation for up to 17 hours under continuous illumination at 90 °C in ambient air. Control samples with no Al2O3 coating experienced extensive oxidation and severe quenching of the photoluminescence intensity under these conditions. PMID:27550790

  5. Quantum dots protected from oxidative attack using alumina shells synthesized by atomic layer deposition.

    PubMed

    Yin, B; Sadtler, B; Berezin, M Y; Thimsen, E

    2016-09-25

    Applications of luminescent quantum dots require the materials to be stable under a wide range of temperatures, photon fluxes and chemical environments. In this work, we demonstrate that Al2O3 shells synthesized by atomic layer deposition on films of CdTe quantum dots are effective to prevent chemical degradation for up to 17 hours under continuous illumination at 90 °C in ambient air. Control samples with no Al2O3 coating experienced extensive oxidation and severe quenching of the photoluminescence intensity under these conditions.

  6. Studying interfacial reactions of cholesterol sulfate in an unsaturated phosphatidylglycerol layer with ozone using field induced droplet ionization mass spectrometry.

    PubMed

    Ko, Jae Yoon; Choi, Sun Mi; Rhee, Young Min; Beauchamp, J L; Kim, Hugh I

    2012-01-01

    Field-induced droplet ionization (FIDI) is a recently developed ionization technique that can transfer ions from the surface of microliter droplets to the gas phase intact. The air-liquid interfacial reactions of cholesterol sulfate (CholSO(4)) in a 1-palmitoyl-2-oleoyl-sn-phosphatidylglycerol (POPG) surfactant layer with ozone (O(3)) are investigated using field-induced droplet ionization mass spectrometry (FIDI-MS). Time-resolved studies of interfacial ozonolysis of CholSO(4) reveal that water plays an important role in forming oxygenated products. An epoxide derivative is observed as a major product of CholSO(4) oxidation in the FIDI-MS spectrum after exposure of the droplet to O(3) for 5 s. The abundance of the epoxide product then decreases with continued O(3) exposure as the finite number of water molecules at the air-liquid interface becomes exhausted. Competitive oxidation of CholSO(4) and POPG is observed when they are present together in a lipid surfactant layer at the air-liquid interface. Competitive reactions of CholSO(4) and POPG with O(3) suggest that CholSO(4) is present with POPG as a well-mixed interfacial layer. Compared with CholSO(4) and POPG alone, the overall ozonolysis rates of both CholSO(4) and POPG are reduced in a mixed layer, suggesting the double bonds of both molecules are shielded by additional hydrocarbons from one another. Molecular dynamics simulations of a monolayer comprising POPG and CholSO(4) correlate well with experimental observations and provide a detailed picture of the interactions between CholSO(4), lipids, and water molecules in the interfacial region.

  7. A non-linear iterative method for multi-layer DOT sub-surface imaging system.

    PubMed

    Hou, Hsiang-Wen; Wu, Shih-Yang; Sun, Hao-Jan; Fang, Wai-Chi

    2014-01-01

    Diffuse Optical Tomography (DOT) has become an emerging non-invasive technology, and has been widely used in clinical diagnosis. Functional near-infrared (FNIR) is one of the important applications of DOT. However, FNIR is used to reconstruct two-dimensional (2D) images for the sake of good spatial and temporal resolution. In this paper we propose a multiple-input and multiple-output (MIMO) based data extraction algorithm method in order to increase the spatial and temporal resolution. The non-linear iterative method is used to reconstruct better resolution images layer by layer. In terms of theory, the simulation results and original images are nearly identical. The proposed reconstruction method performs good spatial resolution, and has a depth resolutions capacity of three layers.

  8. The CdSe/CdS Quantum Dots Luminescence Enhancement Near Silica Layer with the Ion-Synthesized Silver Nanoparticles

    NASA Astrophysics Data System (ADS)

    Shamilov, R. R.; Galyametdinov, Yu G.; Nugaeva, A. A.; Nuzhdin, V. I.; Valeev, V. F.; Stepanov, A. L.

    2016-08-01

    Photoluminescence characteristics of hybrid quantum dots CdSe/CdS deposited on the surface of silica containing the layer of ion-synthesized silver nanoparticles were studied. The quenching or enhancement of the luminescence depending on distance between silver nanoparticles and quantum dots layers was detected. The optimal spacer layer and excitation waveleghth for the highest intensity of their photoluminescence in the plasmon field of metal nanoparticles was defined.

  9. Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control

    NASA Astrophysics Data System (ADS)

    Zuo, Daniel; Qiao, Pengfei; Wasserman, Daniel; Lien Chuang, Shun

    2013-04-01

    We present improved performance in strain-balanced InAs/GaSb type-II superlattice photodetectors grown using InSb interfacial layers, measured using a cross-sectional electron beam induced current (EBIC) technique to obtain minority carrier diffusion characteristics. We detail a modified EBIC model that accounts for the long absorber regions in photodetectors and fit the experimental data. We find a significant increase in the minority hole lifetime (up to 157 ns) and increased minority electron lifetime due to the interfacial layers. Additionally, electrical characterization of the device temperature-dependent resistance-area product reveals that the interfacial treatment improves the device dark current at lower temperatures.

  10. Inkjet printed fluorescent nanorod layers exhibit superior optical performance over quantum dots.

    PubMed

    Halivni, Shira; Shemesh, Shay; Waiskopf, Nir; Vinetsky, Yelena; Magdassi, Shlomo; Banin, Uri

    2015-12-01

    Semiconductor nanocrystals exhibit unique fluorescence properties which are tunable in size, shape and composition. The high quantum yield and enhanced stability have led to their use in biomedical imaging and flat panel displays. Here, semiconductor nanorod based inkjet inks are presented, overcoming limitations of the commonly reported quantum dots in printing applications. Fluorescent seeded nanorods were found to be outstanding candidates for fluorescent inks, due to their low particle-particle interactions and negligible self-absorption. This is manifested by insignificant emission shifts upon printing, even in highly concentrated printed layers and by maintenance of a high fluorescence quantum yield, unlike quantum dots which exhibit fluorescence wavelength shifts and quenching effects. This behavior results from the reduced absorption/emission overlap, accompanied by low energy transfer efficiencies between the nanorods as supported by steady state and time resolved fluorescence measurements. The new seeded nanorod inks enable patterning of thin fluorescent layers, for demanding light emission applications such as signage and displays.

  11. The interfacial amorphous double layer and the homogeneous nucleation in reflow of a Sn-Zn solder on Cu substrate

    SciTech Connect

    Pan, Chien-Cheng; Lin, Kwang-Lung

    2011-05-15

    To illustrate the interfacial reaction mechanism, the Sn-Zn[Sn-8.5Zn-0.5Ag-0.01Al-0.1Ga (wt%)] solder was reflowed on Cu substrate at 250 deg. C for 15 s followed by immediate quench in liquid nitrogen. The frozen interfacial microstructure was investigated with high resolution transmission electron microscope. An amorphous double layer was formed at the interface which consists of a 5 nm pure Cu region and a Cu-Zn diffusion region. Nanocrystalline intermetallic compound (IMC) Cu{sub 5}Zn{sub 8} were observed in the Cu-Zn diffusion region. These nanocrystalline IMCs are suggested to form via a homogeneous nucleation process.

  12. The interfacial amorphous double layer and the homogeneous nucleation in reflow of a Sn-Zn solder on Cu substrate

    NASA Astrophysics Data System (ADS)

    Pan, Chien-Cheng; Lin, Kwang-Lung

    2011-05-01

    To illustrate the interfacial reaction mechanism, the Sn-Zn[Sn-8.5Zn-0.5Ag-0.01Al-0.1Ga (wt%)] solder was reflowed on Cu substrate at 250 °C for 15 s followed by immediate quench in liquid nitrogen. The frozen interfacial microstructure was investigated with high resolution transmission electron microscope. An amorphous double layer was formed at the interface which consists of a 5 nm pure Cu region and a Cu-Zn diffusion region. Nanocrystalline intermetallic compound (IMC) Cu5Zn8 were observed in the Cu-Zn diffusion region. These nanocrystalline IMCs are suggested to form via a homogeneous nucleation process.

  13. GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

    PubMed

    Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

    2015-03-11

    The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms. PMID:25639492

  14. Controlling Interfacial Reactions and Intermetallic Compound Growth at the Interface of a Lead-free Solder Joint with Layer-by-Layer Transferred Graphene.

    PubMed

    Ko, Yong-Ho; Lee, Jong-Dae; Yoon, Taeshik; Lee, Chang-Woo; Kim, Taek-Soo

    2016-03-01

    The immoderate growth of intermetallic compounds (IMCs) formed at the interface of a solder metal and the substrate during soldering can degrade the mechanical properties and reliability of a solder joint in electronic packaging. Therefore, it is critical to control IMC growth at the solder joints between the solder and the substrate. In this study, we investigated the control of interfacial reactions and IMC growth by the layer-by-layer transfer of graphene during the reflow process at the interface between Sn-3.0Ag-0.5Cu (in wt %) lead-free solder and Cu. As the number of graphene layers transferred onto the surface of the Cu substrate increased, the thickness of the total IMC (Cu6Sn5 and Cu3Sn) layer decreased. After 10 repetitions of the reflow process for 50 s above 217 °C, the melting temperature of Sn-3.0Ag-0.5Cu, with a peak temperature of 250 °C, the increase in thickness of the total IMC layer at the interface with multiple layers of graphene was decreased by more than 20% compared to that at the interface of bare Cu without graphene. Furthermore, the average diameter of the Cu6Sn5 scallops at the interface with multiple layers of graphene was smaller than that at the interface without graphene. Despite 10 repetitions of the reflow process, the growth of Cu3Sn at the interface with multiple layers of graphene was suppressed by more than 20% compared with that at the interface without graphene. The multiple layers of graphene at the interface between the solder metal and the Cu substrate hindered the diffusion of Cu atoms from the Cu substrate and suppressed the reactions between Cu and Sn in the solder. Thus, the multiple layers of graphene transferred at the interface between dissimilar metals can control the interfacial reaction and IMC growth occurring at the joining interface. PMID:26856638

  15. Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix

    NASA Astrophysics Data System (ADS)

    Buljan, M.; Radić, N.; Sancho-Paramon, J.; Janicki, V.; Grenzer, J.; Bogdanović-Radović, I.; Siketić, Z.; Ivanda, M.; Utrobičić, A.; Hübner, R.; Weidauer, R.; Valeš, V.; Endres, J.; Car, T.; Jerčinović, M.; Roško, J.; Bernstorff, S.; Holy, V.

    2015-02-01

    We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

  16. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

    NASA Astrophysics Data System (ADS)

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J.

    2016-06-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  17. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

    PubMed Central

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J.

    2016-01-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack. PMID:27279454

  18. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    PubMed

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-01-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  19. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    PubMed

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-01-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack. PMID:27279454

  20. Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics

    NASA Astrophysics Data System (ADS)

    Chien, C. Y.; Chang, Y. J.; Chang, J. E.; Lee, M. S.; Chen, W. Y.; Hsu, T. M.; Li, P. W.

    2010-12-01

    We report a simple and manageable growth method for placing dense three-dimensional Ge quantum dot (QD) arrays in a uniform or a graded size distribution, based on thermally oxidizing stacked poly-SiGe in a layer-cake technique. The QD size and spatial density in each stack can be modulated by conditions of the Ge content in poly-Si1 - xGex, oxidation, and the underlay buffer layer. Size-dependent internal structure, strain, and photoluminescence properties of Ge QDs are systematically investigated. Optimization of the processing conditions could be carried out for producing dense Ge QD arrays to maximize photovoltaic efficiency.

  1. Quality improvements of ZnxCdyMg1-x-ySe layers grown on InP substrates by a thin ZnCdSe interfacial layer

    NASA Astrophysics Data System (ADS)

    Zeng, L.; Yang, B. X.; Tamargo, M. C.; Snoeks, E.; Zhao, L.

    1998-03-01

    The quality of lattice-matched ZnxCdyMg1-x-ySe epitaxial layers grown on (001) InP substrates with a III-V buffer layer has been improved by initially growing a ZnCdSe interfacial layer (50 Å) at low temperature. The widths of double crystal x-ray rocking curves for ZnxCdyMg1-x-ySe epilayers with band gaps as high as 3.05 eV were reduced to about 70 arcsec. The defect density evaluated from etch pit density and plan-view transmission electron microscopy measurements was reduced by two orders of magnitude, to 106-107cm-2. The photoluminescence band edge emission became more symmetric and slightly narrower. It is proposed that an initial two-dimensional growth mode has been achieved by incorporating such a lattice-matched ZnCdSe layer.

  2. Single layer of silicon quantum dots in silicon oxide matrix: Investigation of forming gas hydrogenation on photoluminescence properties and study of the composition of silicon rich oxide layers

    NASA Astrophysics Data System (ADS)

    Aliberti, P.; Shrestha, S. K.; Li, Ruoyu; Green, M. A.; Conibeer, G. J.

    2011-07-01

    Structures consisting of a single layer of silicon quantum dots in a SiO 2 matrix show interesting optoelectronic properties and potential use as energy selective filters, which are a crucial component for the realization of the hot carrier solar cell. In this work single layer silicon quantum dots in SiO 2 have been realized using a magnetron sputtering technique. Quantum dots are formed by annealing of a silicon rich oxide layer deposited between a thermally grown SiO 2 layer and a sputtered SiO 2 layer. The effects of a forming gas post-hydrogenation process on the photoluminescence of the single layer of quantum dots have been investigated in order to understand the photoluminescence mechanism. It was found that for sputtered silicon quantum dots in SiO 2 matrix the photoemission mechanisms are primarily due to quantum confinement and does not strongly rely on matrix defects. In addition, physical and optical properties of several thick silicon rich oxide layers, with different chemical compositions, have been investigated in order to optimize the stoichiometry of silicon rich oxide in the single layers.

  3. Interfacial quality improvement of Cu(In,Ga)Se2 thin film solar cells by Cu-depletion layer formation

    NASA Astrophysics Data System (ADS)

    Nishimura, Takahito; Toki, Soma; Sugiura, Hiroki; Nakada, Kazuyoshi; Yamada, Akira

    2016-09-01

    Se irradiation with time, t Se, was introduced after the second stage of a three-stage process to control the Cu2Se layer during Cu(In,Ga)Se2 (CIGS) deposition. Open circuit voltage and fill factor of CIGS solar cells could be improved by introducing Se irradiation. We concluded that the control of the Cu2Se layer led to the formation of a Cu-depletion CIGS layer (CDL), which improved conversion efficiency owing to suppression of interfacial recombination by a valence band offset formed between CIGS and the CDL. Finally, highest efficiency of 19.8% was achieved with t Se of 5 min. This very simple and new technique is promising for the improvement of photovoltaic performance.

  4. High efficiency and high photo-stability zinc-phthalocyanine based planar heterojunction solar cells with a double interfacial layer

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Min; Whan Kim, Ji; Shim, Hyun-Sub; Kim, Jang-Joo

    2012-09-01

    The use of CuI and MoO3 as a double interfacial layer between indium tin oxide (ITO) and a zinc phthalocyanine (ZnPc) layer improves the power conversion efficiency (ηp) and the photo-stability at the same time in ZnPc based solar cells. Insertion of CuI without MoO3 increased ηp more than 2 times to 3.3%. However, the photo-stability is lowered even further due to diffusion of Cu. Insertion of the MoO3 layer between the ITO and CuI prevents the diffusion of Cu under UV illumination to achieve the improved photo-stability and ηp.

  5. Surface-Engineered Graphene Quantum Dots Incorporated into Polymer Layers for High Performance Organic Photovoltaics

    PubMed Central

    Kim, Jung Kyu; Kim, Sang Jin; Park, Myung Jin; Bae, Sukang; Cho, Sung-Pyo; Du, Qing Guo; Wang, Dong Hwan; Park, Jong Hyeok; Hong, Byung Hee

    2015-01-01

    Graphene quantum dots (GQDs), a newly emerging 0-dimensional graphene based material, have been widely exploited in optoelectronic devices due to their tunable optical and electronic properties depending on their functional groups. Moreover, the dispersibility of GQDs in common solvents depending on hydrophobicity or hydrophilicity can be controlled by chemical functionalization, which is particularly important for homogeneous incorporation into various polymer layers. Here we report that a surface-engineered GQD-incorporated polymer photovoltaic device shows enhanced power conversion efficiency (PCE), where the oxygen-related functionalization of GQDs enabled good dispersity in a PEDOT:PSS hole extraction layer, leading to significantly improved short circuit current density (Jsc) value. To maximize the PCE of the device, hydrophobic GQDs that are hydrothermally reduced (rGQD) were additionally incorporated in a bulk-heterojunction layer, which is found to promote a synergistic effect with the GQD-incorporated hole extraction layer. PMID:26392211

  6. UV-treated graphene oxide as anode interfacial layers for P3HT : PCBM solar cells

    NASA Astrophysics Data System (ADS)

    Cheng, Cheng-En; Tsai, Cheng-Wei; Pei, Zingway; Lin, Tsung-Wu; Chang, Chen-Shiung; Shih-Sen Chien, Forest

    2015-06-01

    Solution-processable graphene oxide (GO) ultrathin films were introduced as anode interfacial layers (AILs) for polymer solar cells (PSCs). The photovoltaic performance of PSCs containing thermal- and UV-treated GO was comparable to that of PSCs with conventional poly(3,4-ethyledioxythiphene):poly(styrenesulfonate) AILs. UV treatment induced the surface activation of GO; an increase in the work function of UV-treated GO improved the energy band alignment at the GO/poly(3-hexylthiophene) interface, which accounted for the efficient hole collection and photovoltaic performance of PSCs with treated GO.

  7. Bulk transport and interfacial transfer dynamics of photogenerated carriers in CdSe quantum dot solid electrodes.

    PubMed

    Yang, Ye; Liu, Zheng; Lian, Tianquan

    2013-08-14

    Practical solar-to-fuel conversion applications of quantum-confined semiconductor crystals require their integration into electrodes. We show that photogenerated electrons in quantum dot solid electrodes can be transported to the aqueous interface to reduce methyl viologen with 100% quantum efficiency and an effective time constant of 12 ± 2 ps. The charge separated state had a half-life of 200 ± 10 ns, limited by hole transport within the solid.

  8. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

    PubMed

    Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

    2016-08-17

    Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate. PMID:27467383

  9. An approach for an advanced anode interfacial layer with electron-blocking ability to achieve high-efficiency organic photovoltaics.

    PubMed

    Yeo, Jun-Seok; Yun, Jin-Mun; Kang, Minji; Khim, Dongyoon; Lee, Seung-Hoon; Kim, Seok-Soon; Na, Seok-In; Kim, Dong-Yu

    2014-11-26

    The interfacial properties of PEDOT:PSS, pristine r-GO, and r-GO with sulfonic acid (SR-GO) in organic photovoltaic are investigated to elucidate electron-blocking property of PEDOT:PSS anode interfacial layer (AIL), and to explore the possibility of r-GO as electron-blocking layers. The SR-GO results in an optimized power conversion efficiency of 7.54% for PTB7-th:PC71BM and 5.64% for P3HT:IC61BA systems. By combining analyses of capacitance-voltage and photovoltaic-parameters dependence on light intensity, it is found that recombination process at SR-GO/active film is minimized. In contrast, the devices using r-GO without sulfonic acid show trap-assisted recombination. The enhanced electron-blocking properties in PEDOT:PSS and SR-GO AILs can be attributed to surface dipoles at AIL/acceptor. Thus, for electron-blocking, the AIL/acceptor interface should be importantly considered in OPVs. Also, by simply introducing sulfonic acid unit on r-GO, excellent contact selectivity can be realized in OPVs.

  10. Interfacial Fast Release Layer in Monodisperse Poly (lactic-co-glycolic acid) Microspheres Accelerates the Drug Release.

    PubMed

    Wu, Jun; Zhao, Xiaoli; Yeung, Kelvin W K; To, Michael K T

    2016-01-01

    Understanding microstructural evolutions of drug delivery devices during drug release process is essential for revealing the drug release mechanisms and controlling the drug release profiles. In this study, monodisperse poly (lactic-co-glycolic acid) microspheres in different diameters were fabricated by microfluidics in order to find out the relationships between the microstructural evolutions and the drug release profiles. It was found that poly (lactic-co-glycolic acid) microspheres underwent significant size expansion which took place from the periphery to the center, resulting in the formation of interfacial fast release layers. At the same time, inner pores were created and the diffusion rate was increased so that the early stage drug release was accelerated. Due to the different expansion rates, small poly (lactic-co-glycolic acid) microspheres tendered to follow homogeneous drug release while large poly (lactic-co-glycolic acid) microspheres tendered to follow heterogeneous drug release. This study suggests that the size expansion and the occurrence of interfacial fast release layer were important mechanisms for early stage drug release of poly (lactic-co-glycolic acid) microspheres.

  11. Infrared focal plane arrays based on dots in a well and strained layer superlattices

    NASA Astrophysics Data System (ADS)

    Krishna, Sanjay

    2009-01-01

    In this paper, we will review some of the recent progress that we have made on developing single pixel detectors and focal plane arrays based on dots-in-a-well (DWELL) heterostructure and Type II strained layer superlattice (SLS). The DWELL detector consists of an active region composed of InAs quantum dots embedded in InGaAs/GaAs quantum wells. By varying the thickness of the InGaAs well, the DWELL heterostructure allows for the manipulation of the operating wavelength and the nature of the transitions (bound-to-bound, bound-to-quasibound and bound-to-continuum) of the detector. Based on these principles, DWELL samples were grown using molecular beam epitaxy and fabricated into 320 x 256 focal plane arrays (FPAs) with Indium bumps using standard lithography at the University of New Mexico. The FPA evaluated was hybridized to an Indigo 9705 readout integrated circuit (ROIC). From this evaluation, we have reported the first two-color, co-located quantum dot based imaging system that can be used to take multicolor images using a single FPA. We have also been investigating the use of miniband transitions in Type II SLS to develop infrared detectors using PIN and nBn based designs.

  12. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  13. Inkjet printed fluorescent nanorod layers exhibit superior optical performance over quantum dots

    NASA Astrophysics Data System (ADS)

    Halivni, Shira; Shemesh, Shay; Waiskopf, Nir; Vinetsky, Yelena; Magdassi, Shlomo; Banin, Uri

    2015-11-01

    Semiconductor nanocrystals exhibit unique fluorescence properties which are tunable in size, shape and composition. The high quantum yield and enhanced stability have led to their use in biomedical imaging and flat panel displays. Here, semiconductor nanorod based inkjet inks are presented, overcoming limitations of the commonly reported quantum dots in printing applications. Fluorescent seeded nanorods were found to be outstanding candidates for fluorescent inks, due to their low particle-particle interactions and negligible self-absorption. This is manifested by insignificant emission shifts upon printing, even in highly concentrated printed layers and by maintenance of a high fluorescence quantum yield, unlike quantum dots which exhibit fluorescence wavelength shifts and quenching effects. This behavior results from the reduced absorption/emission overlap, accompanied by low energy transfer efficiencies between the nanorods as supported by steady state and time resolved fluorescence measurements. The new seeded nanorod inks enable patterning of thin fluorescent layers, for demanding light emission applications such as signage and displays.Semiconductor nanocrystals exhibit unique fluorescence properties which are tunable in size, shape and composition. The high quantum yield and enhanced stability have led to their use in biomedical imaging and flat panel displays. Here, semiconductor nanorod based inkjet inks are presented, overcoming limitations of the commonly reported quantum dots in printing applications. Fluorescent seeded nanorods were found to be outstanding candidates for fluorescent inks, due to their low particle-particle interactions and negligible self-absorption. This is manifested by insignificant emission shifts upon printing, even in highly concentrated printed layers and by maintenance of a high fluorescence quantum yield, unlike quantum dots which exhibit fluorescence wavelength shifts and quenching effects. This behavior results from the

  14. Rapid atomic layer deposition of silica nanolaminates: synergistic catalysis of Lewis/Brønsted acid sites and interfacial interactions

    NASA Astrophysics Data System (ADS)

    Fang, Guoyong; Ma, Jing

    2013-11-01

    Rapid atomic layer deposition (RALD) has been applied to prepare various nanolaminates with repeated multilayer structures. The possible reaction pathways for RALD of the Al2O3/SiO2 nanolaminate using trimethylaluminum (TMA) and tris(tert-butoxy)silanol (TBS) are investigated by using density functional theory (DFT) calculations. The introduction of a Lewis-acid catalyst, TMA, can result in the formation of the catalytic site, which accelerates the propagation of the siloxane polymer. The rate-determining step of whole RALD is the elimination of isobutene of the tert-butoxy groups. The Brønsted acid site of [AlO4] can catalyze the elimination of isobutene. At the same time, the interfacial interactions, such as hydrogen bonding interactions between tert-butoxy groups and the surface, further catalyze the elimination of isobutene and accelerate SiO2 RALD reactions. The synergistic catalysis of Lewis/Brønsted acid sites and interfacial interactions may be applied in the RALD fabrication of other silica nanolaminates, such as HfO2/SiO2, ZrO2/SiO2, and TiO2/SiO2, in microelectronics, catalysis, energy storage, and conversion.Rapid atomic layer deposition (RALD) has been applied to prepare various nanolaminates with repeated multilayer structures. The possible reaction pathways for RALD of the Al2O3/SiO2 nanolaminate using trimethylaluminum (TMA) and tris(tert-butoxy)silanol (TBS) are investigated by using density functional theory (DFT) calculations. The introduction of a Lewis-acid catalyst, TMA, can result in the formation of the catalytic site, which accelerates the propagation of the siloxane polymer. The rate-determining step of whole RALD is the elimination of isobutene of the tert-butoxy groups. The Brønsted acid site of [AlO4] can catalyze the elimination of isobutene. At the same time, the interfacial interactions, such as hydrogen bonding interactions between tert-butoxy groups and the surface, further catalyze the elimination of isobutene and accelerate

  15. Tuning indium tin oxide work function with solution-processed alkali carbonate interfacial layers for high-efficiency inverted organic photovoltaic cells.

    PubMed

    Chen, Fei; Chen, Qi; Mao, Lin; Wang, Yixin; Huang, Xun; Lu, Wei; Wang, Bing; Chen, Liwei

    2013-12-01

    Selective electron collection by an interfacial layer modified indium tin oxide cathode is critically important for achieving high-efficiency inverted structure organic photovoltaic (OPV) cells. Here, we demonstrate that solution-processed alkali carbonates, such as Li2CO3, Na2CO3, K2CO3, Rb2CO3, Cs2CO3, are good interfacial layer materials. Both carbonate concentration and annealing conditions can affect cathode work function and surface roughness. By proper optimization, different alkali carbonates can be almost equally effective as the cathode interfacial layer. Furthermore, good device performance can be achieved at a low annealing temperature (<50 ° C), which allows for potential applications in solution-processed inverted OPV cells on plastic substrates. This work indicates that alkali carbonates, not just cesium carbonate, are valid choices as the cathode interlayer in inverted OPV devices.

  16. One-Step Deposition of Photovoltaic Layers Using Iodide Terminated PbS Quantum Dots.

    PubMed

    Kim, Sungwoo; Noh, Jaehong; Choi, Hyekyoung; Ha, Heonseok; Song, Jung Hoon; Shim, Hyung Cheoul; Jang, Jihoon; Beard, Matthew C; Jeong, Sohee

    2014-11-20

    We present a one-step layer deposition procedure employing ammonium iodide (NH4I) to achieve photovoltaic quality PbS quantum dot (QD) layers. Ammonium iodide is used to replace the long alkyl organic native ligands binding to the QD surface resulting in iodide terminated QDs that are stabilized in polar solvents such as N,N-dimethylformamide without particle aggregation. We extensively characterized the iodide terminated PbS QD via UV-vis absorption, transmission electron microscopy (TEM), thermogravimetric analysis (TGA), FT-IR transmission spectroscopy, and X-ray photoelectron spectroscopy (XPS). Finally, we fabricated PbS QD photovoltaic cells that employ the iodide terminated PbS QDs. The resulting QD-PV devices achieved a best power conversion efficiency of 2.36% under ambient conditions that is limited by the layer thickness. The PV characteristics compare favorably to similar devices that were prepared using the standard layer-by-layer ethandithiol (EDT) treatment that had a similar layer thickness.

  17. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    NASA Technical Reports Server (NTRS)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  18. Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells

    NASA Astrophysics Data System (ADS)

    Park, Kwang Wook; Kang, Seok Jin; Ravindran, Sooraj; Min, Jung Wook; Lee, Soo Kyung; Park, Min Su; Tak Lee, Yong

    2015-06-01

    GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer. The TDs embedded with a QD layer showed enhanced peak tunnel current density and lower differential resistivity at zero bias compared with the TDs without a QD layer. The samples were then annealed to mimic the overlayer growth process. It was found that the performance degradation after annealing was smaller for the QD-layer-embedded TDs. The improved characteristics of the QD-layer-embedded GaAs TDs make them advantageous for interconnecting unit cells in tandem solar cells.

  19. Role of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates

    NASA Astrophysics Data System (ADS)

    Bedell, S. W.; Adam, T. N.; Turansky, A.; Sadana, D. K.

    2011-02-01

    A commercially available 300 mm single-wafer UHV-CVD reactor was used to grow strained pseudomorphic Si 0.79Ge 0.21 layers beyond the critical thickness on Si substrates. A unique in situ method of introducing controlled amounts of oxygen at the growth interface, combined with a very sensitive defect etching technique, was used to study the crystal defects present in the strained SiGe layers immediately after growth and after thermal annealing over large areas (many square centimeters). The etching results showed that the density of growth-related defects (stacking faults) originating from residual O at the epitaxy/substrate interface increases exponentially when the interfacial O concentration exceeds a level of about 10 13 O/cm 2 as measured by secondary ion mass spectroscopy. By defect etching the annealed samples we demonstrate that all the strain-relieving defects (dislocations) we observed originate from these growth defects. Therefore, we confirm previous claims that the strain metastability of low-misfit SiGe layers is controlled mainly by the initial concentration of growth defects. These findings have important implications regarding historical studies of metastability in the strained SiGe/Si system as well as contemporary efforts to grow highly metastable strained layers for IC applications.

  20. Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

    SciTech Connect

    Guzmán, Álvaro Yamamoto, Kenji; Ulloa, J. M.; Hierro, Adrian; Llorens, J. M.

    2015-07-06

    InAs/GaAs{sub 1−x}Sb{sub x} Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x = 17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain and hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.

  1. Interfacial electronic structure and charge transfer of hybrid graphene quantum dot and graphitic carbon nitride nanocomposites: insights into high efficiency for photocatalytic solar water splitting.

    PubMed

    Ma, Zuju; Sa, Rongjian; Li, Qiaohong; Wu, Kechen

    2016-01-14

    New metal-free carbon nanodot/carbon nitride (C3N4) nanocomposites have shown to exhibit high efficiency for photocatalytic solar water splitting. (J. Liu, et al., Science, 2015, 347, 970) However, the mechanism underlying the ultrahigh performance of these nanocomposites and consequently the possibilities for further improvements are not at present clear. In this work, we performed hybrid functional calculations and included long-range dispersion corrections to accurately characterize the interfacial electron coupling of the graphene quantum dot-graphitic carbon nitride composites (Gdot/g-C3N4). The results revealed that the band gap of Gdot/g-C3N4 could be engineered by changing the lateral size of Gdots. In particular, the C24H12/g-C3N4 composites present an ideal band gap of 1.92 eV to harvest a large part of solar light. More interestingly, a type-II heterojunction is formed at the interface of the Gdot/g-C3N4 composites, a desirable feature for enhanced photocatalytic activity. The charge redistribution at the interface leads to strong electron depletion above the Gdot sheet and electron accumulation below the g-C3N4 monolayer, potentially facilitating the separation of H2O oxidation and reduction reactions. Furthermore, we suggested that the photocatalytic performance of the Gdot/g-C3N4 nanocomposites can be further improved by decreasing the thickness of Gdots and tuning the size of Gdots.

  2. Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

    PubMed

    Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

    2015-09-01

    Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

  3. New insights into the Mo/Cu(In,Ga)Se2 interface in thin film solar cells: Formation and properties of the MoSe2 interfacial layer

    NASA Astrophysics Data System (ADS)

    Klinkert, T.; Theys, B.; Patriarche, G.; Jubault, M.; Donsanti, F.; Guillemoles, J.-F.; Lincot, D.

    2016-10-01

    Being at the origin of an ohmic contact, the MoSe2 interfacial layer at the Mo/Cu(In,Ga)Se2 interface in CIGS (Cu(In,Ga)Se2 and related compounds) based solar cells has allowed for very high light-to-electricity conversion efficiencies up to 22.3%. This article gives new insights into the formation and the structural properties of this interfacial layer. Different selenization-steps of a Mo covered glass substrate prior to the CIGS deposition by co-evaporation led to MoSe2 interfacial layers with varying thickness and orientation, as observed by x-ray diffraction and atomic resolution transmission electron microscopy. A novel model based on the anisotropy of the Se diffusion coefficient in MoSe2 is proposed to explain the results. While the series resistance of finished CIGS solar cells is found to correlate with the MoSe2 orientation, the adhesion forces between the CIGS absorber layer and the Mo substrate stay constant. Their counter-intuitive non-correlation with the configuration of the MoSe2 interfacial layer is discussed and related to work from the literature.

  4. The role of interfacial layers in the enhanced thermal conductivity of nanofluids : a renovated Hamilton-Crosser model.

    SciTech Connect

    Yu, W.; Choi, S. U.-S.; Energy Technology

    2004-08-01

    We previously developed a renovated Maxwell model for the effective thermal conductivity of nanofluids and determined that the solid/liquid interfacial layers play an important role in the enhanced thermal conductivity of nanofluids. However, this renovated Maxwell model is limited to suspensions with spherical particles. Here, we extend the Hamilton--Crosser model for suspensions of nonspherical particles to include the effect of a solid/liquid interface. The solid/liquid interface is described as a confocal ellipsoid with a solid particle. The new model for the three-phase suspensions is mathematically expressed in terms of the equivalent thermal conductivity and equivalent volume fraction of anisotropic complex ellipsoids, as well as an empirical shape factor. With a generalized empirical shape factor, the renovated Hamilton-Crosser model correctly predicts the magnitude of the thermal conductivity of nanotube-in-oil nanofluids. At present, this new model is not able to predict the nonlinear behavior of the nanofluid thermal conductivity.

  5. Comparison of hydrolytic and non-hydrolytic atomic layer deposition chemistries: Interfacial electronic properties at alumina-silicon interfaces

    NASA Astrophysics Data System (ADS)

    Marstell, Roderick J.; Strandwitz, Nicholas C.

    2015-11-01

    We report the differences in the passivation and electronic properties of aluminum oxide (Al2O3) deposited on silicon via traditional hydrolytic atomic layer deposition (ALD) and non-hydrolytic (NH) ALD chemistries. Traditional films were grown using trimethylaluminum (TMA) and water and NHALD films grown using TMA and isopropanol at 300 °C. Hydrolytically grown ALD films contain a smaller amount of fixed charge than NHALD films (oxide fixed charge Qf Traditional = -8.1 × 1011 cm-2 and Qf NHALD = -3.6 × 1012 cm-2), and a larger degree of chemical passivation than NHALD films (density of interface trap states, Dit Traditional = 5.4 × 1011 eV-1 cm-2 and Dit NHALD = 2.9 × 1012 eV-1 cm-2). Oxides grown with both chemistries were found to have a band gap of 7.1 eV. The conduction band offset was 3.21 eV for traditionally grown films and 3.38 eV for NHALD. The increased Dit for NHALD films may stem from carbon impurities in the oxide layer that are at and near the silicon surface, as evidenced by both the larger trap state time constant (τTraditional = 2.2 × 10-9 s and τNHALD = 1.7 × 10-7 s) and the larger carbon concentration. We have shown that the use of alcohol-based oxygen sources in NHALD chemistry can significantly affect the resulting interfacial electronic behavior presenting an additional parameter for understanding and controlling interfacial electronic properties at semiconductor-dielectric interfaces.

  6. Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

    NASA Astrophysics Data System (ADS)

    Wenyu, Yuan; Jingping, Xu; Lu, Liu; Yong, Huang; Zhixiang, Cheng

    2016-05-01

    The interfacial and electrical characteristics of Ge metal-oxide-semiconductor (MOS) devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental results show that the NH3-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N2-plasma treatment and no treatment: a lower interface-state density at the midgap (1.64 × 1011 cm-2 · eV-1) and gate leakage current (9.32 × 10-5 A/cm2 at Vfb + 1 V), a small capacitance equivalent thickness (1.11 nm) and a high k value (32). X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeOx (x < 2) are formed on the Ge surface during NH3-plasma treatment than the N2-plasma treatment, resulting in a high-quality high-k/Ge interface, because H atoms and NH radicals in NH3-plasma can enhance volatilization of the unstable low-k GeOx, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NH3-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high-k gate dielectric and out-diffusion of Ge. Project supported by the National Natural Science Foundation of China (Nos. 6127411261176100, 61404055).

  7. Turbulent mixing and transport in a thermally stratified interfacial layer in decaying grid turbulence

    NASA Astrophysics Data System (ADS)

    Jayesh, Yoon, Kyunghwan; Warhaft, Z.

    1991-05-01

    A stably stratified mixing layer, sandwiched in between regions of neutral turbulence, was studied in decaying grid turbulence. The layer, which was shearless, was formed by heating the upper half of the flow by means of elements placed at the entrance to the plenum of a large, open circuit low speed wind tunnel 0.91×0.91 m2 in cross section and 9.14 m in length. The hot air above mixed with the cold below forming the stratified layer in between. As the flow evolved and the turbulence decayed, the buoyancy forces increased relative to the inertial forces (i.e., the Richardson number increased) causing the heat flux to collapse. This resulted in a thinning of the mixing layer with downstream distance (rather than growth which occurs for the passive case). Inside the layer the vertical velocity variance diminished and the vertical heat flux correlation coefficient was reduced to zero. Smoke wire photographs showed a wavylike damped region inside the layer, surrounded by the normal, more energetic turbulence outside. Second-order turbulence quantities scaled in the same way with the local Richardson number both along the layer and across it. The two stably stratified cases studied had centerline Froude numbers of 95 and 65 at 40 mesh lengths from the grid. The results are compared to a passive thermal mixing layer and are contrasted with recent experiments concerning a constant temperature gradient in grid turbulence.

  8. Turbulent mixing and transport in a thermally stratified interfacial layer in decaying grid turbulence

    SciTech Connect

    Jayesh; Yoon, K.; Warhaft, Z. )

    1991-05-01

    A stably stratified mixing layer, sandwiched in between regions of neutral turbulence, was studied in decaying grid turbulence. The layer, which was shearless, was formed by heating the upper half of the flow by means of elements placed at the entrance to the plenum of a large, open circuit low speed wind tunnel 0.91{times}0.91 m{sup 2} in cross section and 9.14 m in length. The hot air above mixed with the cold below forming the stratified layer in between. As the flow evolved and the turbulence decayed, the buoyancy forces increased relative to the inertial forces (i.e., the Richardson number increased) causing the heat flux to collapse. This resulted in a thinning of the mixing layer with downstream distance (rather than growth which occurs for the passive case). Inside the layer the vertical velocity variance diminished and the vertical heat flux correlation coefficient was reduced to zero. Smoke wire photographs showed a wavylike damped region inside the layer, surrounded by the normal, more energetic turbulence outside. Second-order turbulence quantities scaled in the same way with the local Richardson number both along the layer and across it. The two stably stratified cases studied had centerline Froude numbers of 95 and 65 at 40 mesh lengths from the grid. The results are compared to a passive thermal mixing layer and are contrasted with recent experiments concerning a constant temperature gradient in grid turbulence.

  9. Versatile electron-collecting interfacial layer by in situ growth of silver nanoparticles in nonconjugated polyelectrolyte aqueous solution for polymer solar cells.

    PubMed

    Yuan, Kai; Chen, Lie; Chen, Yiwang

    2014-10-01

    Novel PEIE-Ag composites by in situ growth of silver nanoparticles in poly(ethylenimine)-ethoxylated (PEIE) aqueous solution are explored as an efficient interfacial layer for improving inverted polymer solar cells (PSCs) performance. The hybrid PEIE-Ag interfacial material is simple to fabricate only via ultraviolet irradiation with good water-solubility and unique film formation. The generated Ag nanoparticles can anchor in the PEIE polymer chains to form a conductive continuous interpenetrating network structure. Combining of the advantages of PEIE and Ag nanoparticles, the PEIE-Ag shows enhanced charge transport, electron selective and collection, and improved light-harvesting, mainly due to the surface plasmon resonance effect, better energy alignment induced by the formation of ideal dipole layer, as well as the improved conductivity. These distinguished interfacial properties result in the power conversion efficiency of inverted PSCs based on poly[4,8-bis(2-ethyl-hexyl-thiophene-5-yl)-benzo[1,2-b:4,5-b]dithiophene-2,6-diyl]-alt-[2-(2-ethyl-hexanoyl)-thieno[3,4-b]thiophen-4,6-diyl] (PBDTTT-C-T) and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM) photoactive layer substantially improved up to 7.66% from 6.11%. Moreover, the device performance is insensitively dependent on the thickness of the PEIE-Ag interfacial layer, broadening the thicknesses selection window for interfacial materials. These results demonstrate that PEIE-Ag is a potential interfacial material compatible with roll-to-roll techniques and suitable for printed electronic devices. PMID:25207753

  10. Versatile electron-collecting interfacial layer by in situ growth of silver nanoparticles in nonconjugated polyelectrolyte aqueous solution for polymer solar cells.

    PubMed

    Yuan, Kai; Chen, Lie; Chen, Yiwang

    2014-10-01

    Novel PEIE-Ag composites by in situ growth of silver nanoparticles in poly(ethylenimine)-ethoxylated (PEIE) aqueous solution are explored as an efficient interfacial layer for improving inverted polymer solar cells (PSCs) performance. The hybrid PEIE-Ag interfacial material is simple to fabricate only via ultraviolet irradiation with good water-solubility and unique film formation. The generated Ag nanoparticles can anchor in the PEIE polymer chains to form a conductive continuous interpenetrating network structure. Combining of the advantages of PEIE and Ag nanoparticles, the PEIE-Ag shows enhanced charge transport, electron selective and collection, and improved light-harvesting, mainly due to the surface plasmon resonance effect, better energy alignment induced by the formation of ideal dipole layer, as well as the improved conductivity. These distinguished interfacial properties result in the power conversion efficiency of inverted PSCs based on poly[4,8-bis(2-ethyl-hexyl-thiophene-5-yl)-benzo[1,2-b:4,5-b]dithiophene-2,6-diyl]-alt-[2-(2-ethyl-hexanoyl)-thieno[3,4-b]thiophen-4,6-diyl] (PBDTTT-C-T) and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM) photoactive layer substantially improved up to 7.66% from 6.11%. Moreover, the device performance is insensitively dependent on the thickness of the PEIE-Ag interfacial layer, broadening the thicknesses selection window for interfacial materials. These results demonstrate that PEIE-Ag is a potential interfacial material compatible with roll-to-roll techniques and suitable for printed electronic devices.

  11. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H.; Shen, F. K.

    2013-05-28

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  12. Turbulent mixing and transport in a thermally stratified interfacial layer in decaying grid turbulence

    NASA Astrophysics Data System (ADS)

    Yoon, Kyunghwan; Warhaft, Z.; Jayesh

    1991-05-01

    A stably stratified mixing layer, sandwiched in between regions of neutral turbulence, was studied in decaying grid turbulence. The layer, which was shearless, was formed by heating the upper half of the flow by means of elements placed at the entrance to the plenum of a large, open circuit low speed wind tunnel 0.91 x 0.91 sq m in cross section and 9.14 m in length. The hot air above mixed with the cold below forming the stratified layer in between. Smoke wire photographs showed a wavelike damped region inside the layer, surrounded by the normal, more energetic turbulence outside. Second-order turbulence quantities scaled in the same way with the local Richardson number both along the layer and across it. The two stably stratified cases studied had centerline Froude numbers of 95 and 65 at 40 mesh lengths from the grid. The results are compared to a passive thermal mixing layer and are contrasted with recent experiments concerning a constant temperature gradient in grid turbulence.

  13. Narrow Band Gap Lead Sulfide Hole Transport Layers for Quantum Dot Photovoltaics.

    PubMed

    Zhang, Nanlin; Neo, Darren C J; Tazawa, Yujiro; Li, Xiuting; Assender, Hazel E; Compton, Richard G; Watt, Andrew A R

    2016-08-24

    The band structure of colloidal quantum dot (CQD) bilayer heterojunction solar cells is optimized using a combination of ligand modification and QD band gap control. Solar cells with power conversion efficiencies of up to 9.33 ± 0.50% are demonstrated by aligning the absorber and hole transport layers (HTL). Key to achieving high efficiencies is optimizing the relative position of both the valence band and Fermi energy at the CQD bilayer interface. By comparing different band gap CQDs with different ligands, we find that a smaller band gap CQD HTL in combination with a more p-type-inducing CQD ligand is found to enhance hole extraction and hence device performance. We postulate that the efficiency improvements observed are largely due to the synergistic effects of narrower band gap QDs, causing an upshift of valence band position due to 1,2-ethanedithiol (EDT) ligands and a lowering of the Fermi level due to oxidation.

  14. Passivation effects on quantum dots prepared by successive ionic layer adsorption and reaction.

    PubMed

    Dai, Qilin; Maloney, Scott; Chen, Weimin; Poudyal, Uma; Wang, Wenyong

    2016-06-01

    ZnS is typically used to passivate semiconductor quantum dots (QDs) prepared by the successive ionic layer adsorption and reaction (SILAR) method for solar cell applications, while for colloidal QDs, organic ligands are usually used for this passivation purpose. In this study we utilized oleylamine and oleic acid ligands, besides ZnS, to passivate QDs prepared by the SILAR approach, and investigated their effects on the incident photon-to-current efficiency (IPCE) performance of the solar cells. It was observed that oleylamine passivation decreased device performance, while oleic acid passivation improved the IPCE of the cells. Redshift of the IPCE onset wavelength was also observed after oleic acid coating, which was attributed to the delocalization of excitons in the CdS QDs. PMID:27103144

  15. Narrow Band Gap Lead Sulfide Hole Transport Layers for Quantum Dot Photovoltaics.

    PubMed

    Zhang, Nanlin; Neo, Darren C J; Tazawa, Yujiro; Li, Xiuting; Assender, Hazel E; Compton, Richard G; Watt, Andrew A R

    2016-08-24

    The band structure of colloidal quantum dot (CQD) bilayer heterojunction solar cells is optimized using a combination of ligand modification and QD band gap control. Solar cells with power conversion efficiencies of up to 9.33 ± 0.50% are demonstrated by aligning the absorber and hole transport layers (HTL). Key to achieving high efficiencies is optimizing the relative position of both the valence band and Fermi energy at the CQD bilayer interface. By comparing different band gap CQDs with different ligands, we find that a smaller band gap CQD HTL in combination with a more p-type-inducing CQD ligand is found to enhance hole extraction and hence device performance. We postulate that the efficiency improvements observed are largely due to the synergistic effects of narrower band gap QDs, causing an upshift of valence band position due to 1,2-ethanedithiol (EDT) ligands and a lowering of the Fermi level due to oxidation. PMID:27421066

  16. Interfacial and structural properties of sputtered HfO{sub 2} layers

    SciTech Connect

    Aygun, G.; Yildiz, I.

    2009-07-01

    Magnetron sputtered HfO{sub 2} layers formed on a heated Si substrate were studied by spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR), and x-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO{sub x} suboxide layer at the HfO{sub 2}/Si interface is unavoidable. The HfO{sub 2} thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O{sub 2}/Ar gas ratio during sputtering, sputtering time, and substrate temperature. XRD spectra show that the deposited film has (111) monoclinic phase of HfO{sub 2}, which is also supported by FTIR spectra. The atomic concentration and chemical environment of Si, Hf, and O have been measured as a function of depth starting from the surface of the sample by XPS technique. It shows that HfO{sub 2} layers of a few nanometers are formed at the top surface. Below this thin layer, Si-Si bonds are detected just before the Si suboxide layer, and then the Si substrate is reached during the depth profiling by XPS. It is clearly understood that the highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO{sub 2} to form HfO{sub 2}, leaving Si-Si bonds behind.

  17. ESR Study of Interfacial Hydration Layers of Polypeptides in Water-Filled Nanochannels and in Vitrified Bulk Solvents

    PubMed Central

    Lai, Yei-Chen; Chen, Yi-Fan; Chiang, Yun-Wei

    2013-01-01

    There is considerable evidence for the essential role of surface water in protein function and structure. However, it is unclear to what extent the hydration water and protein are coupled and interact with each other. Here, we show by ESR experiments (cw, DEER, ESEEM, and ESE techniques) with spin-labeling and nanoconfinement techniques that the vitrified hydration layers can be evidently recognized in the ESR spectra, providing nanoscale understanding for the biological interfacial water. Two peptides of different secondary structures and lengths are studied in vitrified bulk solvents and in water-filled nanochannels of different pore diameter (6.1∼7.6 nm). The existence of surface hydration and bulk shells are demonstrated. Water in the immediate vicinity of the nitroxide label (within the van der Waals contacts, ∼0.35 nm) at the water-peptide interface is verified to be non-crystalline at 50 K, and the water accessibility changes little with the nanochannel dimension. Nevertheless, this water accessibility for the nanochannel cases is only half the value for the bulk solvent, even though the peptide structures remain largely the same as those immersed in the bulk solvents. On the other hand, the hydration density in the range of ∼2 nm from the nitroxide spin increases substantially with decreasing pore size, as the density for the largest pore size (7.6 nm) is comparable to that for the bulk solvent. The results demonstrate that while the peptides are confined but structurally unaltered in the nanochannels, their surrounding water exhibits density heterogeneity along the peptide surface normal. The causes and implications, especially those involving the interactions between the first hydration water and peptides, of these observations are discussed. Spin-label ESR techniques are proven useful for studying the structure and influences of interfacial hydration. PMID:23840841

  18. Effects of interfacial layer wettability and thickness on the coating morphology and sirolimus release for drug-eluting stent.

    PubMed

    Bedair, Tarek M; Yu, Seung Jung; Im, Sung Gap; Park, Bang Ju; Joung, Yoon Ki; Han, Dong Keun

    2015-12-15

    Drug-eluting stents (DESs) have been used to treat coronary artery diseases by placing in the arteries. However, current DESs still suffer from polymer coating defects such as delamination and peeling-off that follows stent deployment. Such coating defects could increase the roughness of DES and might act as a source of late or very late thrombosis and might increase the incident of restenosis. In this regard, we modified the cobalt-chromium (Co-Cr) alloy surface with hydrophilic poly(2-hydroxyethyl methacrylate) (PHEMA) or hydrophobic poly(2-hydroxyethyl methacrylate)-grafted-poly(caprolactone) (PHEMA-g-PCL) brushes. The resulting surfaces were biocompatible and biodegradable, which could act as anchoring layer for the drug-in-polymer matrix coating. The two modifications were characterized by ATR-FTIR, XPS, water contact angle measurements, SEM and AFM. On the control and modified Co-Cr samples, a sirolimus (SRL)-containing poly(D,L-lactide) (PDLLA) were ultrasonically spray-coated, and the drug release was examined for 8weeks under physiological conditions. The results demonstrated that PHEMA as a primer coating improved the coating stability and degradation morphology, and drug release profile for short-term as compared to control Co-Cr, but fails after 7weeks in physiological buffer. On the other hand, the hydrophobic PHEMA-g-PCL brushes not only enhanced the stability and degradation morphology of the PDLLA coating layer, but also sustained SRL release for long-term. At 8-week of release test, the surface morphologies and release profiles of coated PDLLA layers verified the beneficial effect of hydrophobic PCL brushes as well as their thickness on coating stability. Our study concludes that 200nm thickness of PHEMA-g-PCL as interfacial layer affects the stability and degradation morphology of the biodegradable coating intensively to be applied for various biodegradable-based DESs. PMID:26319336

  19. Effects of interfacial layer wettability and thickness on the coating morphology and sirolimus release for drug-eluting stent.

    PubMed

    Bedair, Tarek M; Yu, Seung Jung; Im, Sung Gap; Park, Bang Ju; Joung, Yoon Ki; Han, Dong Keun

    2015-12-15

    Drug-eluting stents (DESs) have been used to treat coronary artery diseases by placing in the arteries. However, current DESs still suffer from polymer coating defects such as delamination and peeling-off that follows stent deployment. Such coating defects could increase the roughness of DES and might act as a source of late or very late thrombosis and might increase the incident of restenosis. In this regard, we modified the cobalt-chromium (Co-Cr) alloy surface with hydrophilic poly(2-hydroxyethyl methacrylate) (PHEMA) or hydrophobic poly(2-hydroxyethyl methacrylate)-grafted-poly(caprolactone) (PHEMA-g-PCL) brushes. The resulting surfaces were biocompatible and biodegradable, which could act as anchoring layer for the drug-in-polymer matrix coating. The two modifications were characterized by ATR-FTIR, XPS, water contact angle measurements, SEM and AFM. On the control and modified Co-Cr samples, a sirolimus (SRL)-containing poly(D,L-lactide) (PDLLA) were ultrasonically spray-coated, and the drug release was examined for 8weeks under physiological conditions. The results demonstrated that PHEMA as a primer coating improved the coating stability and degradation morphology, and drug release profile for short-term as compared to control Co-Cr, but fails after 7weeks in physiological buffer. On the other hand, the hydrophobic PHEMA-g-PCL brushes not only enhanced the stability and degradation morphology of the PDLLA coating layer, but also sustained SRL release for long-term. At 8-week of release test, the surface morphologies and release profiles of coated PDLLA layers verified the beneficial effect of hydrophobic PCL brushes as well as their thickness on coating stability. Our study concludes that 200nm thickness of PHEMA-g-PCL as interfacial layer affects the stability and degradation morphology of the biodegradable coating intensively to be applied for various biodegradable-based DESs.

  20. p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

    PubMed Central

    Irwin, Michael D.; Buchholz, D. Bruce; Hains, Alexander W.; Chang, Robert P. H.; Marks, Tobin J.

    2008-01-01

    To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage (Voc) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

  1. Formation of carbonaceous nano-layers under high interfacial pressures during lubrication with mineral and bio-based oils

    SciTech Connect

    Baltrus, John P.

    2014-01-01

    In order to better protect steel surfaces against wear under high loads, understanding of chemical reactions between lubricants and metal at high interfacial pressures and elevated temperatures needs to be improved. Solutions at 5 to 20 wt. % of zinc di-2-ethylhexyl dithio phosphate (ZDDP) and chlorinated paraffins (CP) in inhibited paraffinic mineral oil (IPMO) and inhibited soy bean oil (ISBO) were compared on a Twist Compression Tribotester (TCT) at 200 MPa. Microscopy of wear tracks after 10 seconds tribotesting showed much smoother surface profiles than those of unworn areas. X-ray photoelectron spectroscopy (XPS) coupled with Ar-ion sputtering demonstrated that additive solutions in ISBO formed 2–3 times thicker carbon-containing nano-layers compared to IPMO. The amounts of Cl, S or P were unexpectedly low and detectable only on the top surface with less than 5 nm penetration. CP blends in IPMO formed more inorganic chlorides than those in ISBO. It can be concluded that base oils are primarily responsible for the thickness of carbonaceous nano-layers during early stages of severe boundary lubrication, while CP or ZDDP additive contributions are important, but less significant.

  2. Strong interfacial attrition developed by oleate/layered double hydroxide nanoplatelets dispersed into poly(butylene succinate).

    PubMed

    Zhou, Qian; Verney, Vincent; Commereuc, Sophie; Chin, In-Joo; Leroux, Fabrice

    2010-09-01

    Poly(butylene succinate) (PBS) nanocomposite structure was studied as a function of the filler percentage loading. The resulting state of dispersion was evaluated by XRD and TEM, and the interfacial attrition between PBS chain and lamellar platelets by the melt rheological properties. Hybrid organic inorganic (O/I) layered double hydroxide (LDH) organo-modified by oleate anions was used as filler. It was found that the confinement supplied by the LDH framework forces the interleaved organic molecule to be more distant from each other than in the case of oleate salt, this having as an effect to decrease strongly the homonuclear intermolecular (1)H(1)H dipolar interaction. An additional consequence of this relatively free molecular rotation, affecting the (13)C CPMAS response as well, is to facilitate the delamination of the 2D-stacked layers during extrusion since an quasi-exfoliated PBS:Mg(2)Al/oleate structure is observed for filler loading lower than 5% w/w. This is in association to a non-linear viscoelasticity in the low-omega region and the observed shear-thinning tendency compares better than other PBS:silicate nanocomposite derivatives and is here explained by the presence of a percolated LDH nanoparticle network. Indeed the plastic deformation in the low-omega region is found to be restricted by well-dispersed LDH tactoids in association with a rather strong attrition phenomenon between tethered oleate anions and PBS chains.

  3. Tensile properties and interfacial bonding of multi-layered, high-purity titanium strips fabricated by ARB process.

    PubMed

    Ghafari-Gousheh, Soroush; Nedjad, Syamak Hossein; Khalil-Allafi, Jafar

    2015-11-01

    Severe plastic deformation (SPD) processing has shown very effective in promotion of mechanical properties of metals and alloys. In this study, the results of investigating mechanical properties and also inter-layer bond performance of accumulative roll bonded high purity titanium (HP-Ti) strips are presented. High purity titanium plates were severely deformed by use of a combination of cold rolling (CR) to a thickness reduction of approximately 87% and then accumulative roll bonding (ARB) for three cycles (N=3) at ambient temperature. Optical and scanning electron microscopy, tensile testing, and hardness measurements were conducted. The ARB strips exhibited lower tensile strength and ductility in comparison to cold rolled one which can basically be attributed to the poor function of the latest bonds established in the centerlines of the strips. Fractographic examinations revealed the interfacial de-bonding along the centerline between the layers having undergone roll bonding for just one cycle. It was while the interfaces having experienced roll bonding for more cycles showed much higher resistance against delaminating. PMID:26253205

  4. Ligand Layer Engineering To Control Stability and Interfacial Properties of Nanoparticles.

    PubMed

    Schulz, Florian; Dahl, Gregor T; Besztejan, Stephanie; Schroer, Martin A; Lehmkühler, Felix; Grübel, Gerhard; Vossmeyer, Tobias; Lange, Holger

    2016-08-01

    The use of mixed ligand layers including poly(ethylene glycol)-based ligands for the functionalization of nanoparticles is a very popular strategy in the context of nanomedicine. However, it is challenging to control the composition of the ligand layer and maintain high colloidal and chemical stability of the conjugates. A high level of control and stability are crucial for reproducibility, upscaling, and safe application. In this study, gold nanoparticles with well-defined mixed ligand layers of α-methoxypoly(ethylene glycol)-ω-(11-mercaptoundecanoate) (PEGMUA) and 11-mercaptoundecanoic acid (MUA) were synthesized and characterized by ATR-FTIR spectroscopy and gel electrophoresis. The colloidal and chemical stability of the conjugates was tested by dynamic light scattering (DLS), small-angle X-ray scattering (SAXS), and UV/vis spectroscopy based experiments, and their interactions with cells were analyzed by elemental analysis. We demonstrate that the alkylene spacer in PEGMUA is the key feature for the controlled synthesis of mixed layer conjugates with very high colloidal and chemical stability and that a controlled synthesis is not possible using regular PEG ligands without the alkylene spacer. With the results of our stability tests, the molecular structure of the ligands can be clearly linked to the colloidal and chemical stabilization. We expect that the underlying design principle can be generalized to improve the level of control in nanoparticle surface chemistry. PMID:27458652

  5. A moving contact line as a rheometer for nanometric interfacial layers

    PubMed Central

    Lhermerout, Romain; Perrin, Hugo; Rolley, Etienne; Andreotti, Bruno; Davitt, Kristina

    2016-01-01

    How a liquid drop sits or moves depends on the physical and mechanical properties of the underlying substrate. This can be seen in the hysteresis of the contact angle made by a drop on a solid, which is known to originate from surface heterogeneities, and in the slowing of droplet motion on deformable solids. Here, we show how a moving contact line can be used to characterize a molecularly thin polymer layer on a solid. We find that the hysteresis depends on the polymerization index and can be optimized to be vanishingly small (<0.07°). The mechanical properties are quantitatively deduced from the microscopic contact angle, which is proportional to the speed of the contact line and the Rouse relaxation time divided by the layer thickness, in agreement with theory. Our work opens the prospect of measuring the properties of functionalized interfaces in microfluidic and biomedical applications that are otherwise inaccessible. PMID:27562022

  6. Control of interfacial layers for high-performance porous Si lithium-ion battery anode.

    PubMed

    Park, Hyungmin; Lee, Sungjun; Yoo, Seungmin; Shin, Myoungsoo; Kim, Jieun; Chun, Myungjin; Choi, Nam-Soon; Park, Soojin

    2014-09-24

    We demonstrate a facile synthesis of micrometer-sized porous Si particles via copper-assisted chemical etching process. Subsequently, metal and/or metal silicide layers are introduced on the surface of porous Si particles using a simple chemical reduction process. Macroporous Si and metal/metal silicide-coated Si electrodes exhibit a high initial Coulombic efficiency of ∼90%. Reversible capacity of carbon-coated porous Si gradually decays after 80 cycles, while metal/metal silicide-coated porous Si electrodes show significantly improved cycling performance even after 100 cycles with a reversible capacity of >1500 mAh g(-1). We confirm that a stable solid-electrolyte interface layer is formed on metal/metal silicide-coated porous Si electrodes during cycling, leading to a highly stable cycling performance. PMID:25153926

  7. Control of interfacial layers for high-performance porous Si lithium-ion battery anode.

    PubMed

    Park, Hyungmin; Lee, Sungjun; Yoo, Seungmin; Shin, Myoungsoo; Kim, Jieun; Chun, Myungjin; Choi, Nam-Soon; Park, Soojin

    2014-09-24

    We demonstrate a facile synthesis of micrometer-sized porous Si particles via copper-assisted chemical etching process. Subsequently, metal and/or metal silicide layers are introduced on the surface of porous Si particles using a simple chemical reduction process. Macroporous Si and metal/metal silicide-coated Si electrodes exhibit a high initial Coulombic efficiency of ∼90%. Reversible capacity of carbon-coated porous Si gradually decays after 80 cycles, while metal/metal silicide-coated porous Si electrodes show significantly improved cycling performance even after 100 cycles with a reversible capacity of >1500 mAh g(-1). We confirm that a stable solid-electrolyte interface layer is formed on metal/metal silicide-coated porous Si electrodes during cycling, leading to a highly stable cycling performance.

  8. A moving contact line as a rheometer for nanometric interfacial layers.

    PubMed

    Lhermerout, Romain; Perrin, Hugo; Rolley, Etienne; Andreotti, Bruno; Davitt, Kristina

    2016-08-26

    How a liquid drop sits or moves depends on the physical and mechanical properties of the underlying substrate. This can be seen in the hysteresis of the contact angle made by a drop on a solid, which is known to originate from surface heterogeneities, and in the slowing of droplet motion on deformable solids. Here, we show how a moving contact line can be used to characterize a molecularly thin polymer layer on a solid. We find that the hysteresis depends on the polymerization index and can be optimized to be vanishingly small (<0.07°). The mechanical properties are quantitatively deduced from the microscopic contact angle, which is proportional to the speed of the contact line and the Rouse relaxation time divided by the layer thickness, in agreement with theory. Our work opens the prospect of measuring the properties of functionalized interfaces in microfluidic and biomedical applications that are otherwise inaccessible.

  9. A moving contact line as a rheometer for nanometric interfacial layers

    NASA Astrophysics Data System (ADS)

    Lhermerout, Romain; Perrin, Hugo; Rolley, Etienne; Andreotti, Bruno; Davitt, Kristina

    2016-08-01

    How a liquid drop sits or moves depends on the physical and mechanical properties of the underlying substrate. This can be seen in the hysteresis of the contact angle made by a drop on a solid, which is known to originate from surface heterogeneities, and in the slowing of droplet motion on deformable solids. Here, we show how a moving contact line can be used to characterize a molecularly thin polymer layer on a solid. We find that the hysteresis depends on the polymerization index and can be optimized to be vanishingly small (<0.07°). The mechanical properties are quantitatively deduced from the microscopic contact angle, which is proportional to the speed of the contact line and the Rouse relaxation time divided by the layer thickness, in agreement with theory. Our work opens the prospect of measuring the properties of functionalized interfaces in microfluidic and biomedical applications that are otherwise inaccessible.

  10. Inverted polymer solar cells with enhanced fill factor by inserting the potassium stearate interfacial modification layer

    NASA Astrophysics Data System (ADS)

    Li, Jiangsheng; Jiu, Tonggang; Li, Bairu; Kuang, Chaoyang; Chen, Qiushan; Ma, Sushuang; Shu, Jie; Fang, Junfeng

    2016-05-01

    A thin potassium stearate (KSt) film combined with an optimized ZnO film was introduced to improve the fill factor (FF) of highly efficient inverted polymer solar cells (PSCs). Atomic force microscopy and contact angle measurements were used to show that the introduction of KSt did not change the morphology of interlayer. On the contrary, it is beneficial for the spread of the active layer on the interlayer. The origin of enhanced FF was systematically studied by the ideal current-voltage model for a single heterojunction solar cell and electrochemical impedance spectroscopy. On the basis of the data analysis, the reduced charge recombination loss was responsible for this improved FF. At last, when KSt was replaced by sodium stearate (NaSt), the similar experiment phenomenon was observed. This indicates that inserting a metallic stearate modified layer is a promising strategy to enhance inverted PSCs performance.

  11. New concepts on the interfacial friction behavior between flat steel ribbon layers

    SciTech Connect

    Zheng, J.; Zhu, G.

    1995-11-01

    Flat steel ribbon wound pressure vessels are widely used in chemical, petrochemical, and other industries. However, no satisfactory theoretical formulae are available to estimate the additional strengthening induced by the friction between the layers. Effective normal stress in the ribbon wide direction and shear stress are new concepts for describing such strengthening effect. These concepts are analyzed further to obtain expressions for both axial and circumferential bursting pressure, and stresses of the vessel. Comparison with one set of experimental results shows excellent agreement.

  12. The influence of magnesium oxide interfacial layer on photovoltaic properties of dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Asemi, M.; Ghanaatshoar, M.

    2016-09-01

    In the present study, to enhance the power conversion efficiency of the DSSCs, we introduce MgO insulating layers at the interface between TiO2 and electrolyte to decrease charge recombination rate by suppressing the electron transfer from TiO2 to the electrolyte. The thickness of the MgO layer plays a vital role in the kinetics of dye-sensitized solar cells and affects their overall efficiency. The cell with optimized thickness of MgO layer exhibits the highest conversion efficiency ( η = 5.12 %) with a high short-circuit current density (18.15 mA/cm2) and open-circuit voltage (0.571 V). Open-circuit voltage decay measurement results verify the improvement of the electrons lifetime in the DSSCs fabricated with surface-modified photoanodes due to the retarding the charge recombination. In order to explore the reasons for the J SC improvement, incident photon-to-current conversion efficiency measurement was taken. Our results show that the enhancement in the photoinjected electron lifetime can contribute to an increase in the electron collection efficiency, leading to the improved J SC value. Furthermore, the enhancement in the photoinjected electron recombination rate is also demonstrated by electrochemical impedance spectroscopy.

  13. Running interfacial waves in a two-layer fluid system subject to longitudinal vibrations.

    PubMed

    Goldobin, D S; Pimenova, A V; Kovalevskaya, K V; Lyubimov, D V; Lyubimova, T P

    2015-05-01

    We study the waves at the interface between two thin horizontal layers of immiscible fluids subject to high-frequency horizontal vibrations. Previously, the variational principle for energy functional, which can be adopted for treatment of quasistationary states of free interface in fluid dynamical systems subject to vibrations, revealed the existence of standing periodic waves and solitons in this system. However, this approach does not provide regular means for dealing with evolutionary problems: neither stability problems nor ones associated with propagating waves. In this work, we rigorously derive the evolution equations for long waves in the system, which turn out to be identical to the plus (or good) Boussinesq equation. With these equations one can find all the time-independent-profile solitary waves (standing solitons are a specific case of these propagating waves), which exist below the linear instability threshold; the standing and slow solitons are always unstable while fast solitons are stable. Depending on initial perturbations, unstable solitons either grow in an explosive manner, which means layer rupture in a finite time, or falls apart into stable solitons. The results are derived within the long-wave approximation as the linear stability analysis for the flat-interface state [D.V. Lyubimov and A.A. Cherepanov, Fluid Dynamics 21, 849 (1986)] reveals the instabilities of thin layers to be long wavelength. PMID:26066252

  14. Comparison of hydrolytic and non-hydrolytic atomic layer deposition chemistries: Interfacial electronic properties at alumina-silicon interfaces

    SciTech Connect

    Marstell, Roderick J.; Strandwitz, Nicholas C.

    2015-11-14

    We report the differences in the passivation and electronic properties of aluminum oxide (Al{sub 2}O{sub 3}) deposited on silicon via traditional hydrolytic atomic layer deposition (ALD) and non-hydrolytic (NH) ALD chemistries. Traditional films were grown using trimethylaluminum (TMA) and water and NHALD films grown using TMA and isopropanol at 300 °C. Hydrolytically grown ALD films contain a smaller amount of fixed charge than NHALD films (oxide fixed charge Q{sub f} {sub Traditional} = −8.1 × 10{sup 11 }cm{sup −2} and Q{sub f} {sub NHALD} = −3.6 × 10{sup 12 }cm{sup −2}), and a larger degree of chemical passivation than NHALD films (density of interface trap states, D{sub it} {sub Traditional} = 5.4 × 10{sup 11 }eV{sup −1 }cm{sup −2} and D{sub it} {sub NHALD} = 2.9 × 10{sup 12 }eV{sup −1 }cm{sup −2}). Oxides grown with both chemistries were found to have a band gap of 7.1 eV. The conduction band offset was 3.21 eV for traditionally grown films and 3.38 eV for NHALD. The increased D{sub it} for NHALD films may stem from carbon impurities in the oxide layer that are at and near the silicon surface, as evidenced by both the larger trap state time constant (τ{sub Traditional} = 2.2 × 10{sup −9} s and τ{sub NHALD} = 1.7 × 10{sup −7} s) and the larger carbon concentration. We have shown that the use of alcohol-based oxygen sources in NHALD chemistry can significantly affect the resulting interfacial electronic behavior presenting an additional parameter for understanding and controlling interfacial electronic properties at semiconductor-dielectric interfaces.

  15. Assembling carbon quantum dots to a layered carbon for high-density supercapacitor electrodes

    NASA Astrophysics Data System (ADS)

    Chen, Guanxiong; Wu, Shuilin; Hui, Liwei; Zhao, Yuan; Ye, Jianglin; Tan, Ziqi; Zeng, Wencong; Tao, Zhuchen; Yang, Lihua; Zhu, Yanwu

    2016-01-01

    It is found that carbon quantum dots (CQDs) self-assemble to a layer structure at ice crystals-water interface with freeze- drying. Such layers interconnect with each other, forming a free-standing CQD assembly, which has an interlayer distance of about 0.366 nm, due to the existence of curved carbon rings other than hexagons in the assembly. CQDs are fabricated by rupturing C60 by KOH activation with a production yield of ~15 wt.%. The CQDs obtained have an average height of 1.14 nm and an average lateral size of 7.48 nm, and are highly soluble in water. By packaging annealed CQD assembly to high density (1.23 g cm‑3) electrodes in supercapacitors, a high volumetric capacitance of 157.4 F cm‑3 and a high areal capacitance of 0.66 F cm‑2 (normalized to the loading area of electrodes) are demonstrated in 6 M KOH aqueous electrolyte with a good rate capability.

  16. Cu2O quantum dots emitting visible light grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lee, Min Young; Kim, Soo-Hyun; Park, Il-Kyu

    2016-11-01

    This paper reports the fabrication of the Cu2O quantum dots (QDs) emitting a controlled wavelength in the visible spectral range prepared by atomic layer deposition (ALD). Cu2O thin film layers formed on the Al2O3 surface showed large density of islands via Volmer-Weber growth mode, which resulting in QD formation. As the number of ALD cycles was increased from 60 to 480, the spatial density and mean diameter of the Cu2O QDs increased systematically from 4.02 × 1011/cm2 to 2.56×1012/cm2 and from 2.1 to 3.2 nm, respectively. The absorption spectral results indicated that the electron energy transition in the Cu2O QDs was a direct process with the optical band gaps decreasing from 2.71 to 2.15 eV with increasing QD size from 2.1 to 3.2 nm because of the quantum confinement effect. The Cu2O QDs showed broad emission peaks composed of multiple elementary emission spectra corresponding to the Cu2O QD ensembles with a different size distribution. As the size of Cu2O QDs decreased, the shoulder peaks at the higher energy side developed due to the quantum confinement effect.

  17. Assembling carbon quantum dots to a layered carbon for high-density supercapacitor electrodes

    PubMed Central

    Chen, Guanxiong; Wu, Shuilin; Hui, Liwei; Zhao, Yuan; Ye, Jianglin; Tan, Ziqi; Zeng, Wencong; Tao, Zhuchen; Yang, Lihua; Zhu, Yanwu

    2016-01-01

    It is found that carbon quantum dots (CQDs) self-assemble to a layer structure at ice crystals-water interface with freeze- drying. Such layers interconnect with each other, forming a free-standing CQD assembly, which has an interlayer distance of about 0.366 nm, due to the existence of curved carbon rings other than hexagons in the assembly. CQDs are fabricated by rupturing C60 by KOH activation with a production yield of ~15 wt.%. The CQDs obtained have an average height of 1.14 nm and an average lateral size of 7.48 nm, and are highly soluble in water. By packaging annealed CQD assembly to high density (1.23 g cm−3) electrodes in supercapacitors, a high volumetric capacitance of 157.4 F cm−3 and a high areal capacitance of 0.66 F cm−2 (normalized to the loading area of electrodes) are demonstrated in 6 M KOH aqueous electrolyte with a good rate capability. PMID:26754463

  18. Multiple moving interfacial cracks between two dissimilar piezoelectric layers under electromechanical loading

    NASA Astrophysics Data System (ADS)

    Nourazar, Mahsa; Ayatollahi, Mojtaba

    2016-07-01

    The dynamic problem of several moving cracks at the interface between two dissimilar piezoelectric materials is analyzed. The combined out-of-plane mechanical and in-plane electrical loads are applied to the layers. Fourier transforms are used to reduce the problem to a system of singular integral equations with simple Cauchy kernel. The integral equations are solved numerically by converting to a system of linear algebraic equations and by using a collocation technique. The results presented consist of the stress intensity factors and the electric displacement intensity factors. It is found that generally the field intensity factors increase with increasing crack propagation speed.

  19. Forming double layer-encapsulated quantum dots for bio-imaging and cell targeting

    NASA Astrophysics Data System (ADS)

    Fahmi, Mochamad Zakki; Chang, Jia-Yaw

    2013-01-01

    We report a simple and effective approach for the preparation of double layer-encapsulated quantum dots (DL-Qdots) composed of alkyl-capping ligands to interdigitate with hydrophobic, protective agents on the surface of AgInS2/ZnS quantum dots (Qdots), which allow phase transfer of hydrophobic Qdots from the organic phase into the aqueous phase. The alkyl-capping ligands consist of a hydrophobic, aliphatic chain and different functional terminal groups (e.g., carboxyl, amine, hydroxyl, and thiol groups) that can serve as reactive sites to chemically couple with other materials. The resulting DL-Qdots bearing various functional groups retain good fluorescence properties and show excellent solubility as well as stability over a range of pH in the aqueous phase. Cytotoxicity studies of DL-Qdots bearing carboxyl groups (DL-Qdots-COOH) were carried out against human cervical (HeLa) cancer cells to elicit no apparent toxicity even at high concentrations of 300 μg mL-1 and 24 h of incubation. To demonstrate their potential biomedical application, DL-Qdots-COOH were further conjugated with folate for staining in HeLa, human liver carcinoma (HepG2), and human breast (MCF-7) cancer cells. Confocal imaging characterization revealed that folate-conjugated DL-Qdots could target most specifically and effectively HeLa cells via folate receptor-mediated targeted delivery compared to HepG2 and MCF-7 cells. The generality and simplicity of this newly developed strategy can possibly be extended to a large variety of hydrophobic Qdots and nanocrystals whose surface protective agents have a long aliphatic chain.

  20. Organic/inorganic hybrid pn-junction between copper phthalocyanine and CdSe quantum dot layers as solar cells

    NASA Astrophysics Data System (ADS)

    Saha, Sudip K.; Guchhait, Asim; Pal, Amlan J.

    2012-08-01

    We have introduced an organic/inorganic hybrid pn-junction for solar cell applications. Layers of II-VI quantum dots and a metal-phthalocyanine in sequence have been used as n- and p-type materials, respectively, to form a junction. The film of quantum dots has been formed through a layer-by-layer process by replacing the long-chain ligands of the nanoparticles in each ultrathin layer or a monolayer with short-chain ones so that interparticle distance becomes small leading to a decrease in resistance of the quantum dot layer. With indium tin oxide and Au as electrodes, we have formed an inverted sandwiched structure. These electrodes formed ohmic contacts with the neighboring materials. From the current-voltage characteristics of the hybrid heterostructure, we have inferred formation of a depletion region at the pn-junction that played a key role in charge separation and correspondingly a photocurrent in the external circuit. For comparison, we have also formed and characterized Schottky devices based on components of the pn-junction keeping the electrode combination same. From capacitance-voltage characteristics, we have observed that the depletion region of the hybrid pn-junction was much wider as compared to that in Schottky devices based on components of the junction.

  1. Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots

    NASA Astrophysics Data System (ADS)

    Ramalingam, Gopalakrishnan; Floro, Jerrold A.; Reinke, Petra

    2016-05-01

    The annealing of sub-critical Ge wetting layers (WL < 3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus directly related to the strain energy. The emergence of these nanostructures, hillocks and pre-quantum dots, is studied by scanning tunneling microscopy. A wetting layer deposited at 350 °C is initially rough on the nanometer length-scale and undergoes a progressive transformation and smoothening during annealing at T < 460 °C when vacancy lines and the 2xn reconstruction are observed. The metastable Ge WL then collapses to form 3D nanostructures whose morphology is controlled by the WL thickness: first, the hillocks, with a wedding cake-type structure where the step edges run parallel to the ⟨110⟩ direction, are formed from thin wetting layers, while {105}-faceted structures, called pre-quantum dots (p-QDs), are formed from thicker layers. The wetting layer thickness and thus the misfit strain energy controls the type of structure. The crossover thickness between the hillock and p-QDs regime is between 1.6 and 2.1 ML. The hillocks have larger lateral dimensions and volumes than p-QDs, and the p-QDs are exceptionally small quantum dots with a lower limit of 10 nm in width. Our work opens a new pathway to the control of nanostructure morphology and size in the elastically strained Ge/Si system.

  2. Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2.

    PubMed

    Kaushik, Naveen; Karmakar, Debjani; Nipane, Ankur; Karande, Shruti; Lodha, Saurabh

    2016-01-13

    We demonstrate a low and constant effective Schottky barrier height (ΦB ∼ 40 meV) irrespective of the metal work function by introducing an ultrathin TiO2 ALD interfacial layer between various metals (Ti, Ni, Au, and Pd) and MoS2. Transmission line method devices with and without the contact TiO2 interfacial layer on the same MoS2 flake demonstrate reduced (24×) contact resistance (RC) in the presence of TiO2. The insertion of TiO2 at the source-drain contact interface results in significant improvement in the on-current and field effect mobility (up to 10×). The reduction in RC and ΦB has been explained through interfacial doping of MoS2 and validated by first-principles calculations, which indicate metallic behavior of the TiO2-MoS2 interface. Consistent with DFT results of interfacial doping, X-ray photoelectron spectroscopy (XPS) data also exhibit a 0.5 eV shift toward higher binding energies for Mo 3d and S 2p peaks in the presence of TiO2, indicating Fermi level movement toward the conduction band (n-type doping). Ultraviolet photoelectron spectroscopy (UPS) further corroborates the interfacial doping model, as MoS2 flakes capped with ultrathin TiO2 exhibit a reduction of 0.3 eV in the effective work function. Finally, a systematic comparison of the impact of selective doping with the TiO2 layer under the source-drain metal relative to that on top of the MoS2 channel shows a larger benefit for transistor performance from the reduction in source-drain contact resistance.

  3. Interfacial Energy Alignment at the ITO/Ultra-Thin Electron Selective Dielectric Layer Interface and Its Effect on the Efficiency of Bulk-Heterojunction Organic Solar Cells.

    PubMed

    Itoh, Eiji; Goto, Yoshinori; Saka, Yusuke; Fukuda, Katsutoshi

    2016-04-01

    We have investigated the photovoltaic properties of an inverted bulk heterojunction (BHJ) cell in a device with an indium-tin-oxide (ITO)/electron selective layer (ESL)/P3HT:PCBM active layer/MoOx/Ag multilayered structure. The insertion of only single layer of poly(diallyl-dimethyl-ammonium chloride) (PDDA) cationic polymer film (or poly(ethyleneimine) (PEI) polymeric interfacial dipole layer) and titanium oxide nanosheet (TN) films as an ESL effectively improved cell performance. Abnormal S-shaped curves were observed in the inverted BHJ cells owing to the contact resistance across the ITO/active layer interface and the ITO/PDDA/TN/active layer interface. The series resistance across the ITO/ESL interface in the inverted BHJ cell was successfully reduced using an interfacial layer with a positively charged surface potential with respect to ITO base electrode. The positive dipole in PEI and the electronic charge phenomena at the electrophoretic deposited TN (ED-TN) films on ITO contributed to the reduction of the contact resistance at the electrode interface. The surface potential measurement revealed that the energy alignment by the transfer of electronic charges from the ED-TN to the base electrodes. The insertion of the ESL with a large positive surface potential reduced the potential barrier for the electron injection at ITO/TN interface and it improved the photovoltaic properties of the inverted cell with an ITO/TN/active layer/MoOx/Ag structure. PMID:27451612

  4. Enhancement of emission efficiency of colloidal CdSe quantum dots on silicon substrate via an ultra-thin layer of aluminum oxide.

    PubMed

    Patty, K; Sadeghi, S M; Nejat, A; Mao, C-B

    2014-04-18

    We demonstrate that an ultra-thin layer of aluminum oxide can significantly enhance the emission efficiency of colloidal quantum dots on a Si substrate. For an ensemble of single quantum dots, our results show that this super brightening process can increase the fluorescence of CdSe quantum dots, forming well-resolved spectra, while in the absence of this layer the emission remains mostly at the noise level. We demonstrate that this process can be further enhanced with irradiation of the quantum dots, suggesting a significant photo-induced fluorescence enhancement via considerable suppression of non-radiative decay channels of the quantum dots. We study the impact of the Al oxide thickness on Si and interdot interactions, and discuss the results in terms of photo-induced catalytic properties of the Al oxide and the effects of such an oxide on the Coulomb blockade responsible for suppression of photo-ionization of the quantum dots.

  5. Contrasting suspended covers reveal the impact of an artificial monolayer on heat transfer processes at the interfacial boundary layer.

    PubMed

    Pittaway, P; Martínez-Alvarez, V; Hancock, N

    2015-01-01

    The highly variable performance of artificial monolayers in reducing evaporation from water storages has been attributed to wind speed and wave turbulence. Other factors operating at the interfacial boundary layer have seldom been considered. In this paper, two physical shade covers differing in porosity and reflectivity were suspended over 10 m diameter water tanks to attenuate wind and wave turbulence. The monolayer octadecanol was applied to one of the covered tanks, and micrometeorological conditions above and below the covers were monitored to characterise diurnal variation in the energy balance. A high downward (air-to-water) convective heat flux developed under the black cover during the day, whereas diurnal variation in the heat flux under the more reflective, wind-permeable white cover was much less. Hourly air and water temperature profiles under the covers over 3 days when forced convection was minimal (low wind speed) were selected for analysis. Monolayer application reduced temperature gain in surface water under a downward convective heat flux, and conversely reduced temperature loss under an upward convective heat flux. This 'dual property' may explain why repeat application of an artificial monolayer to retard evaporative loss (reducing latent heat loss) does not inevitably increase water temperature. PMID:26524454

  6. Contrasting suspended covers reveal the impact of an artificial monolayer on heat transfer processes at the interfacial boundary layer.

    PubMed

    Pittaway, P; Martínez-Alvarez, V; Hancock, N

    2015-01-01

    The highly variable performance of artificial monolayers in reducing evaporation from water storages has been attributed to wind speed and wave turbulence. Other factors operating at the interfacial boundary layer have seldom been considered. In this paper, two physical shade covers differing in porosity and reflectivity were suspended over 10 m diameter water tanks to attenuate wind and wave turbulence. The monolayer octadecanol was applied to one of the covered tanks, and micrometeorological conditions above and below the covers were monitored to characterise diurnal variation in the energy balance. A high downward (air-to-water) convective heat flux developed under the black cover during the day, whereas diurnal variation in the heat flux under the more reflective, wind-permeable white cover was much less. Hourly air and water temperature profiles under the covers over 3 days when forced convection was minimal (low wind speed) were selected for analysis. Monolayer application reduced temperature gain in surface water under a downward convective heat flux, and conversely reduced temperature loss under an upward convective heat flux. This 'dual property' may explain why repeat application of an artificial monolayer to retard evaporative loss (reducing latent heat loss) does not inevitably increase water temperature.

  7. Contacts on n-type germanium using variably doped zinc oxide and highly doped indium tin oxide interfacial layers

    NASA Astrophysics Data System (ADS)

    Paramahans Manik, Prashanth; Lodha, Saurabh

    2015-05-01

    The impact of varying interfacial layer (IL) doping on the performance of Ti/IL/n-Ge contacts is demonstrated using undoped ZnO, aluminum-doped ZnO (AZO), and O-vacancy-doped n+-ZnO ILs having similar conduction band offsets ΔEc with respect to Ti and Ge. Diode and transfer length method measurements show Fermi-level unpinning for all the ILs; however, the contact resistance and its dependence on the IL thickness decrease with increasing IL doping owing to the reduction in the tunneling resistance. The contact resistivity depends on the IL doping (NIL) as ρ \\text{c-n + \\text{-ZnO}} < ρ \\text{c-AZO} < ρ \\text{c-ZnO} for N\\text{n + \\text{-ZnO}} > N\\text{AZO} > N\\text{ZnO}. Contacts using a highly doped, low ΔEc tin-doped In2O3 IL exhibit the lowest value, 1.4 × 10-7 Ω·cm2.

  8. Interfacial and Network Characteristics of Silicon Nanoparticle Layers Used in Printed Electronics

    NASA Astrophysics Data System (ADS)

    Männl, Ulrich; Chuvilin, Andrey; Magunje, Batsirai; Ohieku Jonah, Emmanuel; Härting, Margit; Britton, David Thomas

    2013-05-01

    In printed electronics the use of semiconducting silicon nanoparticles allows more than the simple printing of conductive materials. It gives the possibility of fabricating robust and inexpensive, active and reactive components like temperature sensors which are shown as an example. In our approach high quality silicon nanoparticles with stable, essentially oxide-free surfaces are used to replace the pigment in water-based graphic inks, which on curing have unique semiconducting properties, arising from the transport of charge through a percolation network of crystalline silicon nanoparticles. In this study scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) were employed to investigate the mesoscale structure of the particle network and, more importantly the structure of the interface between particles. An intimate contact between lattice planes of different particles was observed, without the presence of an intervening oxide layer.

  9. Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

    NASA Astrophysics Data System (ADS)

    da Silva, E. F.; de Vasconcelos, E. A.; Stošić, B. D.

    2002-05-01

    A simple simulation scheme that simultaneously describes the growth kinetics of SiO 2 films at the nanometer scale and the SiO x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.

  10. Role of interfacial friction for flow instabilities in a thin polar-ordered active fluid layer

    NASA Astrophysics Data System (ADS)

    Sarkar, Niladri; Basu, Abhik

    2015-11-01

    We construct a generic coarse-grained dynamics of a thin inflexible planar layer of polar-ordered suspension of active particles that is frictionally coupled to an embedding isotropic passive fluid medium with a friction coefficient Γ . Being controlled by Γ , our model provides a unified framework to describe the long-wavelength behavior of a variety of thin polar-ordered systems, ranging from wet to dry active matter and free-standing active films. Investigations of the linear instabilities around a chosen orientationally ordered uniform reference state reveal generic moving and static instabilities in the system that can depend sensitively on Γ . Based on our results, we discuss estimation of bounds on Γ in experimentally accessible systems.

  11. [Research on the Highly Stable White LED with CdSe/ZnS Quantum Dot as Light Conversion Layer].

    PubMed

    Cao, Jin; Zhou, Jie; Xie, Jing-weil; Chen, An-ping; Zhang, Xuel; Yin, Lu-qiao; Zhang, Jian-hua

    2016-02-01

    In accordance with the one-step synthesis, in this paper, we synthesized 510, 550 and 630 nm three emission peaks CdSe/ZnS core-shell quantum dots with high stability and high quantum yield whose quantum yield were 82%, 98% and 97%. We used the quantum dot material to replace the phosphor material, and mixed QDs with the silicone uniformly, then dispersed the QDs/silicone composites onto the blue InGaN LEDs to fabricate the QDs-WLEDs. By successively adding different colors of quantum dots for the preparation of quantum dot light converting layer, We investigated that how does the ratio of the three kind of quantum dots whose peaks were 510, 550 and 630 nm effect on the properties of the white LED devices. This paper also studied the mechanism of energy conversion between different colors of quantum dots. We also utilized the mechanism that the quantum dots effect on the white spectrum and color coordinates; we got the results of the optimization of the white device and the ratio of three-color quantum dots. The results show that when the quantum dot ratio is 24:7:10, white LED devices with high stability and high efficiency can be obtained, in the current range of 20-200 mA, the range of color temperature is from 4 607 to 5 920 K, the CIE-1931 coordinates is from (0.355 1,0.348 3) to (0.323 4, 0.336 1), the color rendering index is from 77. 6 to 84. 2, and the highest power efficiency of the devices achieves to 31.69 lm · W⁻¹ @ 20 mA. In addition, in order to further investigate the reason of stable device performance, We studied the effects of time, temperature, UV treatment on the stability of CdSe/ZnS QDs/silicone light conversion material, the results show that the excellent stability of the devices attributes to the stability of the one-step synthesis of core-shell structure of the quantum dot material, the final optimized device is a low-power high-quality white light source and the device has good application prospects in the field of standard white

  12. [Research on the Highly Stable White LED with CdSe/ZnS Quantum Dot as Light Conversion Layer].

    PubMed

    Cao, Jin; Zhou, Jie; Xie, Jing-weil; Chen, An-ping; Zhang, Xuel; Yin, Lu-qiao; Zhang, Jian-hua

    2016-02-01

    In accordance with the one-step synthesis, in this paper, we synthesized 510, 550 and 630 nm three emission peaks CdSe/ZnS core-shell quantum dots with high stability and high quantum yield whose quantum yield were 82%, 98% and 97%. We used the quantum dot material to replace the phosphor material, and mixed QDs with the silicone uniformly, then dispersed the QDs/silicone composites onto the blue InGaN LEDs to fabricate the QDs-WLEDs. By successively adding different colors of quantum dots for the preparation of quantum dot light converting layer, We investigated that how does the ratio of the three kind of quantum dots whose peaks were 510, 550 and 630 nm effect on the properties of the white LED devices. This paper also studied the mechanism of energy conversion between different colors of quantum dots. We also utilized the mechanism that the quantum dots effect on the white spectrum and color coordinates; we got the results of the optimization of the white device and the ratio of three-color quantum dots. The results show that when the quantum dot ratio is 24:7:10, white LED devices with high stability and high efficiency can be obtained, in the current range of 20-200 mA, the range of color temperature is from 4 607 to 5 920 K, the CIE-1931 coordinates is from (0.355 1,0.348 3) to (0.323 4, 0.336 1), the color rendering index is from 77. 6 to 84. 2, and the highest power efficiency of the devices achieves to 31.69 lm · W⁻¹ @ 20 mA. In addition, in order to further investigate the reason of stable device performance, We studied the effects of time, temperature, UV treatment on the stability of CdSe/ZnS QDs/silicone light conversion material, the results show that the excellent stability of the devices attributes to the stability of the one-step synthesis of core-shell structure of the quantum dot material, the final optimized device is a low-power high-quality white light source and the device has good application prospects in the field of standard white

  13. Adsorption of β-casein-surfactant mixed layers at the air-water interface evaluated by interfacial rheology.

    PubMed

    Maestro, Armando; Kotsmar, Csaba; Javadi, Aliyar; Miller, Reinhard; Ortega, Francisco; Rubio, Ramón G

    2012-04-26

    This work presents a detailed study of the dilational viscoelastic moduli of the adsorption layers of the milk protein β-casein (BCS) and a surfactant at the liquid/air interface, over a broad frequency range. Two complementary techniques have been used: a drop profile tensiometry technique and an excited capillary wave method, ECW. Two different surfactants were studied: the nonionic dodecyldimethylphosphine oxide (C12DMPO) and the cationic dodecyltrimethylammonium bromide (DoTAB). The interfacial dilational elasticity and viscosity are very sensitive to the composition of protein-surfactant mixed adsorption layers at the air/water interface. Two different dynamic processes have been observed for the two systems studied, whose characteristic frequencies are close to 0.01 and 100 Hz. In both systems, the surface elasticity was found to show a maximum when plotted versus the surfactant concentration. However, at frequencies above 50 Hz the surface elasticity of BCS + C12DMPO is higher than the one of the aqueous BCS solution over most of the surfactant concentration range, whereas for the BCS + DoTAB it is smaller for high surfactant concentrations and higher at low concentrations. The BCS-surfactant interaction modifies the BCS random coil structure via electrostatic and/or hydrophobic interactions, leading to a competitive adsorption of the BCS-surfactant complexes with the free, unbound surfactant molecules. Increasing the surfactant concentration decreases the adsorbed proteins. However, the BCS molecules are rather strongly bound to the interface due to their large adsorption energy. The results have been fitted to the model proposed by C. Kotsmar et al. ( J. Phys. Chem. B 2009 , 113 , 103 ). Even though the model describes well the concentration dependence of the limiting elasticity, it does not properly describe its frequency dependence.

  14. Origin of interfacial nanoscopic gaseous domains and formation of dense gas layer at hydrophobic solid-water interface.

    PubMed

    Peng, Hong; Birkett, Greg R; Nguyen, Anh V

    2013-12-10

    Interfacial gas enrichment (IGE) covering the entire area of hydrophobic solid-water interface has recently been detected by atomic force microscopy (AFM) and hypothesized to be responsible for the unexpected stability and anomalous contact angle of gaseous nanobubbles and the significant change from DLVO to non-DLVO forces. In this paper, we provide further proof of the existence of IGE in the form of a dense gas layer (DGL) by molecular dynamic simulation. Nitrogen gas adsorption at the water-graphite interface is investigated using molecular dynamic simulation at 300 K and 1 atm normal pressure. The results show that a DGL with a density equivalent to a gas at pressure of 500 atm is formed and equilibrated with a normal pressure of 1 atm. By varying the number of gas molecules in the system, we observe several types of dense gas domains: aggregates, cylindrical caps, and DGLs. Spherical cap gas domains form during the simulation but are unstable and always revert to another type of gas domain. Furthermore, the calculated surface potential of the DGL-water interface, -17.5 mV, is significantly closer to 0 than the surface potential, -65 mV, of normal gas bubble-water interface. This result supports our previously stated hypothesis that the change in surface potential causes the switch from repulsion to attraction for an AFM tip when the graphite surface is covered by an IGE layer. The change in surface potential comes from the structure change of water molecules at the DGL-water interface as compared with the normal gas-water interface. In addition, the contact angle of the cylindrical cap high density nitrogen gas domains is 141°. This contact angle is far greater than 85° observed for water on graphite at ambient conditions and much closer to the 150° contact angle observed for nanobubbles in experiments.

  15. Interfacial growth of large-area single-layer metal-organic framework nanosheets

    PubMed Central

    Makiura, Rie; Konovalov, Oleg

    2013-01-01

    The air/liquid interface is an excellent platform to assemble two-dimensional (2D) sheets of materials by enhancing spontaneous organizational features of the building components and encouraging large length scale in-plane growth. We have grown 2D molecularly-thin crystalline metal-organic-framework (MOF) nanosheets composed of porphyrin building units and metal-ion joints (NAFS-13) under operationally simple ambient conditions at the air/liquid interface. In-situ synchrotron X-ray diffraction studies of the formation process performed directly at the interface were employed to optimize the NAFS-13 growth protocol leading to the development of a post-injection method –post-injection of the metal connectors into the water subphase on whose surface the molecular building blocks are pre-oriented– which allowed us to achieve the formation of large-surface area morphologically-uniform preferentially-oriented single-layer nanosheets. The growth of such large-size high-quality sheets is of interest for the understanding of the fundamental physical/chemical properties associated with ultra-thin sheet-shaped materials and the realization of their use in applications. PMID:23974345

  16. Interfacial hydrodynamic drag on nanowires embedded in thin oil films and protein layers.

    PubMed

    Lee, Myung Han; Lapointe, Clayton P; Reich, Daniel H; Stebe, Kathleen J; Leheny, Robert L

    2009-07-21

    We investigate the motion of ferromagnetic nanowires confined to nanometer-scale oil films at an air/aqueous interface in response to the application of external magnetic fields and field gradients. By varying the oil viscosity, film thickness, and wire length, we cover two regimes of response suggested by theory: one where the surface viscosity is expected to dominate the wire's motion and one where the subphase viscosity is expected to dominate [Levine, A. J.; Liverpool, T. B.; MacKintosh, F. C. Phys. Rev. E 2004, 69, 021503]. For wire motion parallel to the long axis of the wire, the observed drag agrees reasonably with theoretical predictions. However, the drag on wires moving perpendicular to their long axis or rotating about a short axis is unexpectedly insensitive to the film properties over the full range of measurements. This behavior is in contrast to the rotational and translational drag on nanowires in molecularly thin protein layers, which follow theoretical expectations. The observations in the oil films, which are explained in terms of the manner in which the wire immerses dynamically in the film and subphase, demonstrate how the effective drag viscosity of an aspherical particle confined to a fluid interface can depend on its direction of motion. PMID:19594180

  17. Researching the silicon direct wafer bonding with interfacial SiO2 layer

    NASA Astrophysics Data System (ADS)

    Xiaoqing, Wang; Yude, Yu; Jin, Ning

    2016-05-01

    A silicon wafer direct bonding with a thin SiO2 layer at the interface was investigated. An atomic force microscope (AFM) was employed to characterize the surface roughness and a shearing test was carried out to evaluate the bonding strength. Experiments were performed to analyze the relations of surface roughness and bonding strength with the thickness of SiO2 which was grown by thermal oxidation and plasma enhanced chemical vapor deposition (PECVD) respectively. The bonding strength can reach up to 18 MPa for thermal oxidation and 8 MPa for PECVD after a 2-h 400 °C annealing. Results indicate that the bonding strength is negatively correlated to the thickness of SiO2 at the interface, which is important in designing the MEMS-based devices and other devices built with wafer direct bonding. Project supported by the Key Program of the National Natural Science Foundation of China (No. 61334008) and the National Natural Science Foundation of China (No. 61376072).

  18. Growth of ultrathin GaSb layer on GaAs using metal–organic chemical vapor deposition with Sb interfacial treatment

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Jen; Ha, Minh-Thien-Huu; Hsu, Ching-Yi; Lin, Yueh-Chin; Chang, Sheng-Po; Chang, Shoou-Jinn; Chang, Edward Yi

    2016-09-01

    GaSb epitaxial layers were directly grown on GaAs substrates by metal–organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 °C, the strain induced by lattice mismatch was accommodated by 90° dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties.

  19. Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Jen; Ha, Minh-Thien-Huu; Hsu, Ching-Yi; Lin, Yueh-Chin; Chang, Sheng-Po; Chang, Shoou-Jinn; Chang, Edward Yi

    2016-09-01

    GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 °C, the strain induced by lattice mismatch was accommodated by 90° dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties.

  20. Effect with high density nano dot type storage layer structure on 20 nm planar NAND flash memory characteristics

    NASA Astrophysics Data System (ADS)

    Sasaki, Takeshi; Muraguchi, Masakazu; Seo, Moon-Sik; Park, Sung-kye; Endoh, Tetsuo

    2014-01-01

    The merits, concerns and design principle for the future nano dot (ND) type NAND flash memory cell are clarified, by considering the effect of storage layer structure on NAND flash memory characteristics. The characteristics of the ND cell for a NAND flash memory in comparison with the floating gate type (FG) is comprehensively studied through the read, erase, program operation, and the cell to cell interference with device simulation. Although the degradation of the read throughput (0.7% reduction of the cell current) and slower program time (26% smaller programmed threshold voltage shift) with high density (10 × 1012 cm-2) ND NAND are still concerned, the suppress of the cell to cell interference with high density (10 × 1012 cm-2) plays the most important part for scaling and multi-level cell (MLC) operation in comparison with the FG NAND. From these results, the design knowledge is shown to require the control of the number of nano dots rather than the higher nano dot density, from the viewpoint of increasing its memory capacity by MLC operation and suppressing threshold voltage variability caused by the number of dots in the storage layer. Moreover, in order to increase its memory capacity, it is shown the tunnel oxide thickness with ND should be designed thicker (>3 nm) than conventional designed ND cell for programming/erasing with direct tunneling mechanism.

  1. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer

    SciTech Connect

    Chun, J.-S.; Desjardins, P.; Lavoie, C.; Shin, C.-S.; Cabral, C.; Petrov, I.; Greene, J. E.

    2001-06-15

    Single-crystal TiN(111) layers, 45 nm thick, were grown on MgO(111) by ultrahigh vacuum reactive magnetron sputter deposition in pure N{sub 2} discharges at T{sub s}=700{degree}C. Epitaxial Al(111) overlayers, 160 nm thick, were then deposited at T{sub s}=100{degree}C in Ar without breaking vacuum. Interfacial reactions and changes in bilayer microstructure due to annealing at 620 and 650{degree}C were investigated using x-ray diffraction and transmission electron microscopy (TEM). The interfacial regions of samples annealed at 620{degree}C consist of continuous {approx_equal}7-nm-thick epitaxial wurtzite-structure AlN(0001) layers containing a high density of stacking faults, with {approx_equal}22 nm thick tetragonal Al{sub 3}Ti(112) overlayers. Surprisingly, samples annealed at the higher temperature are more stable against Al{sub 3}Ti formation. TEM analyses of bilayers annealed at 650{degree}C (10{degree}C below the Al melting point!) reveal only the self-limited growth of an {approx_equal}3-nm-thick interfacial layer of perfect smooth epitaxial wurtzite-structure AlN(0001) which serves as an extremely effective deterrent for preventing further interlayer reactions. {copyright} 2001 American Institute of Physics.

  2. The preparation of an elastomer/silicate layer nanocompound with an exfoliated structure and a strong ionic interfacial interaction by utilizing an elastomer latex containing pyridine groups.

    PubMed

    He, Shao-jian; Wang, Yi-qing; Feng, Yi-ping; Liu, Qing-sheng; Zhang, Li-qun

    2010-03-19

    A great variety of polymer/layered silicate (PLS) nanocomposites have been reported, however, there are few exfoliated PLS nanocomposites and their inorganic-organic interfaces are still a great problem, especially for the elastomers. In this research, a kind of exfoliated elastomer/silicate layer nanocompound was prepared and proved by XRD and TEM, in which 10 phr Na(+)-montmorillonite was dispersed in butadiene-styrene-vinyl pyridine rubber by latex compounding method with acidic flocculants. Moreover, a dynamic mechanical thermal analyzer (DMTA) suggested a strong interfacial interaction (interaction parameter B(H) = 4.91) between the silicate layers and macromolecules in addition to the weak inorganic-organic interfacial interaction, and solid state (15)N NMR indicated the formation of a strong ionic interface through the acidifying pyridine. Subsequently, a remarkable improvement of the dispersing morphology, mechanical performance and gas barrier property appeared, compared to that using calcium ion flocculants. This supports the formation of an exfoliated structure and an improved interfacial interaction. PMID:20173242

  3. Microscale X-ray tomographic investigation of the interfacial morphology between the catalyst and micro porous layers in proton exchange membrane fuel cells

    NASA Astrophysics Data System (ADS)

    Prass, Sebastian; Hasanpour, Sadegh; Sow, Pradeep Kumar; Phillion, André B.; Mérida, Walter

    2016-07-01

    The interfacial morphology between the catalyst layer (CL) and micro porous layer (MPL) influences the performance of proton exchange membrane fuel cells (PEMFCs). Here we report a direct method to investigate the CL-MPL interfacial morphology of stacked and compressed gas diffusion layer (GDL with MPL)-catalyst coated membrane (CCM) assemblies. The area, origin and dimensions of interfacial gaps are studied with high-resolution X-ray micro computed tomography (X-μCT). The projected gap area (fraction of the CL-MPL interface separated by gaps) is higher for GDL-CCM assemblies with large differences in the surface roughness between CL and MPL but reduces with increasing compression and similarity in roughness. Relatively large continuous gaps are found in proximity to cracks in the MPL. These are hypothesized to form due to the presence of large pores on the surface of the GDL. Smaller gaps are induced by the surface roughness features throughout the CL-MPL interface. By modification of the pore sizes on the GDL surface serving as substrate for the MPL, the number and dimension of MPL crack induced gaps can be manipulated. Moreover, adjusting the CL and MPL surface roughness parameters to achieve similar orders of roughness can improve the surface mating characteristics of these two components.

  4. Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode.

    PubMed

    Tian, Haitao; Wang, Lu; Shi, Zhenwu; Gao, Huaiju; Zhang, Shuhui; Wang, Wenxin; Chen, Hong

    2012-01-01

    Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, the interfacial flatness of this device would be worsened due to the introduction of quantum dots. In this paper, we demonstrate that the interfacial quality of this device can be optimized through increasing the growth temperature of AlAs up barrier. The glancing incidence X-ray reflectivity and the high-resolution transmission electron microscopy measurements show that the interfacial smoothness has been greatly improved, and the photo-luminescence test indicated that the InAs QDs were maintained at the same time. The smoother interface was attributed to the evaporation of segregated indium atoms at InGaAs surface layer. PACS: 73.40.GK, 73.23._b, 73.21.La, 74.62.Dh. PMID:22333518

  5. Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode.

    PubMed

    Tian, Haitao; Wang, Lu; Shi, Zhenwu; Gao, Huaiju; Zhang, Shuhui; Wang, Wenxin; Chen, Hong

    2012-02-14

    Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, the interfacial flatness of this device would be worsened due to the introduction of quantum dots. In this paper, we demonstrate that the interfacial quality of this device can be optimized through increasing the growth temperature of AlAs up barrier. The glancing incidence X-ray reflectivity and the high-resolution transmission electron microscopy measurements show that the interfacial smoothness has been greatly improved, and the photo-luminescence test indicated that the InAs QDs were maintained at the same time. The smoother interface was attributed to the evaporation of segregated indium atoms at InGaAs surface layer. PACS: 73.40.GK, 73.23._b, 73.21.La, 74.62.Dh.

  6. Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)

    SciTech Connect

    Schmidbauer, M.; Wang, Zh. M.; Mazur, Yu. I.; Lytvyn, P. M.; Salamo, G. J.; Grigoriev, D.; Schaefer, P.; Koehler, R.; Hanke, M.

    2007-08-27

    The self-organized formation of In{sub 0.40}Ga{sub 0.60}As quantum dot chains was investigated using x-ray scattering. Two samples were compared grown on GaAs(100) by molecular beam epitaxy. The first sample with a single layer of In{sub 0.40}Ga{sub 0.60}As dots shows weak quantum dot alignment and a corresponding elongated shape along [011], while the top layer of a multilayered In{sub 0.40}Ga{sub 0.60}As/GaAs sample exhibits extended and highly regular quantum dot chains oriented along [011]. Numerical calculations of the three-dimensional strain fields are used to explain the initial stages of chain formation by anisotropic strain relaxation induced by the elongated dot shape.

  7. Ultrafine nickel oxide quantum dots enbedded with few-layer exfoliative graphene for an asymmetric supercapacitor: Enhanced capacitances by alternating voltage

    NASA Astrophysics Data System (ADS)

    Jing, Mingjun; Wang, Chiwei; Hou, Hongshuai; Wu, Zhibin; Zhu, Yirong; Yang, Yingchang; Jia, Xinnan; Zhang, Yan; Ji, Xiaobo

    2015-12-01

    A green and one-step method of electrochemical alternating voltage has been utilized to form NiO quantum dots/graphene flakes (NiO-dots/Gh) for supercapacitor applications. NiO quantum dots (∼3 nm) are uniformly deposited on few-layer graphene surfaces by oxygen functional groups on graphene surface that is naturally utilized to bridge NiO and graphene through Ni-O-C bands, which exhibits outstanding specific capacitance 1181.1 F g-1 at a current density of 2.1 A g-1 and rate behavior 66.2% at 42 A g-1 as NiO dots can be fleetly wired up to current collector through the underlying graphene two-dimensional layers. The NiO-dots/Gh composite is further undertaken in asymmetric supercapacitors with high energy density (27.3 Wh kg-1 at 1562.6 W kg-1).

  8. Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: Charge transient spectroscopy

    SciTech Connect

    Antonova, Irina V.; Nebogatikova, Nadezhda A.; Prinz, Victor Ya.

    2014-05-12

    Arrays of graphene or few-layer graphene quantum dots (QDs) embedded in a partially fluorinated graphene matrix were created by chemical functionalization of layers. Charge transient spectroscopy employed for investigation of obtained QD systems (size 20–70 nm) has allowed us to examine the QD energy spectra and the time of carrier emission (or charge relaxation) from QDs as a function of film thickness. It was found that the characteristic time of carrier emission from QDs decreased markedly (by about four orders of magnitude) on increasing the QD thickness from one graphene monolayer to 3 nm. Daylight-assisted measurements also demonstrate a strong decrease of the carrier emission time.

  9. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    SciTech Connect

    Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells.

  10. Enhancing the performances of P3HT:PCBM – MoS3 based H2-evolving photocathodes with interfacial layers

    PubMed Central

    Bourgeteau, Tiphaine; Tondelier, Denis; Geffroy, Bernard; Brisse, Romain; Cornut, Renaud; Artero, Vincent; Jousselme, Bruno

    2015-01-01

    Organic semiconductors have great potential for producing hydrogen in a durable and economically viable manner, as they rely on readily available materials and can be solution-processed over large areas. With the objective of building efficient hybrid organic-inorganic photo-electrochemical cells, we combined a noble metal-free and solution-processable catalyst for proton reduction, MoS3, and a poly-(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulk heterojunction (BHJ). Different interfacial layers were investigated to improve the charge transfer between P3HT:PCBM and MoS3. Metallic Al\\Ti interfacial layers led to an increase of the photocurrent up to 8 mA cm−2 at reversible hydrogen electrode (RHE) potential with a 0.6 V anodic shift of the HER onset potential, a value close to the open circuit potential of the P3HT:PCBM solar cell. A 50 nm thick C60 layer also works as interfacial layer, with current density reaching 1 mA cm−2 at RHE potential. Moreover, two recently highlighted1 figures-of-merit, measuring the ratio of power saved, Φsaved,ideal and Φsaved,NPAC, were evaluated and discussed to compare the performances of various photocathodes assessed in a three-electrode configuration. Φsaved,ideal and Φsaved,NPAC use the RHE and a non-photoactive electrode with identical catalyst as dark electrode, respectively. They provide different information especially for the differentiation of the role of the photogenerating layer and the role of the catalyst. Best results were obtained with the Al\\Ti metallic interlayer, with Φsaved,ideal and Φsaved,NPAC reaching 0.64 % and 2.05 % respectively. PMID:26151685

  11. n-Type Transition Metal Oxide as a Hole Extraction Layer in PbS Quantum Dot Solar Cells

    SciTech Connect

    Gao, Jianbo; Perkins, Craig L.; Luther, Joseph M.; Hanna, Mark C.; Chen, Hsiang-Yu; Semonin, Octavi E.; Nozik, Arthur J.; Ellingson, Randy J.; Beard, Matthew C.

    2011-08-10

    The n-type transition metal oxides (TMO) consisting of molybdenum oxide (MoO{sub x}) and vanadium oxide (V₂O{sub x}) are used as an efficient hole extraction layer (HEL) in heterojunction ZnO/PbS quantum dot solar cells (QDSC). A 4.4% NREL-certified device based on the MoO{sub x} HEL is reported with Al as the back contact material, representing a more than 65% efficiency improvement compared with the case of Au contacting the PbS quantum dot (QD) layer directly. We find the acting mechanism of the hole extraction layer to be a dipole formed at the MoO{sub x} and PbS interface enhancing band bending to allow efficient hole extraction from the valence band of the PbS layer by MoO{sub x}. The carrier transport to the metal anode is likely enhanced through shallow gap states in the MoO{sub x} layer.

  12. Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO{sub 2}/p-GaAs metal-oxide-semiconductor capacitors

    SciTech Connect

    Liu, C.; Zhang, Y. M.; Zhang, Y. M.; Lv, H. L.

    2014-12-14

    The effect of atomic layer deposition (ALD) growth temperature on the interfacial characteristics of p-GaAs MOS capacitors with ALD HfO{sub 2} high-k dielectric using tetrakis(ethylmethyl)amino halfnium precursor is investigated in this study. Using the combination of capacitance-voltage (C-V) and X-ray photoelectron spectroscopy (XPS) measurements, ALD growth temperature is found to play a large role in controlling the reaction between interfacial oxides and precursor and ultimately determining the interface properties. The reduction of surface oxides is observed to be insignificant for ALD at 200 °C, while markedly pronounced for growth at 300 °C. The corresponding C-V characteristics are also shown to be ALD temperature dependent and match well with the XPS results. Thus, proper ALD process is crucial in optimizing the interface quality.

  13. Anisotropic Polar Magneto-Optic Kerr Effect of Ultrathin Fe /GaAs (001 ) Layers due to Interfacial Spin-Orbit Interaction

    NASA Astrophysics Data System (ADS)

    Buchner, M.; Högl, P.; Putz, S.; Gmitra, M.; Günther, S.; Schoen, M. A. W.; Kronseder, M.; Schuh, D.; Bougeard, D.; Fabian, J.; Back, C. H.

    2016-10-01

    We report the observation of the anisotropic polar magneto-optical Kerr effect in thin layers of epitaxial Fe /GaAs (001 ) at room temperature. A clear twofold symmetry of the Kerr rotation angle depending on the orientation of the linear polarization of the probing laser beam with respect to the crystallographic directions of the sample is detected for ultrathin magnetic films saturated out of the film plane. The amplitude of the anisotropy decreases with increasing Fe film thickness, suggesting that the interfacial region is the origin of the anisotropy. The twofold symmetry is fully reproduced by model calculations based on an interference of interfacial Bychkov-Rashba and Dresselhaus spin-orbit coupling.

  14. Inkjet-assisted layer-by-layer printing of quantum dot/enzyme microarrays for highly sensitive detection of organophosphorous pesticides.

    PubMed

    Luan, Enxiao; Zheng, Zhaozhu; Li, Xinyu; Gu, Hongxi; Liu, Shaoqin

    2016-04-15

    We present a facile fabrication of layer-by-layer (LbL) microarrays of quantum dots (QDs) and acetylcholinesterase enzyme (AChE). The resulting arrays had several unique properties, such as low cost, high integration and excellent flexibility and time-saving. The presence of organophosphorous pesticides (OPs) can inhibit the AChE activity and thus changes the fluorescent intensity of QDs/AChE microscopic dot arrays. Therefore, the QDs/AChE microscopic dot arrays were used for the sensitive visual detection of OPs. Linear calibration for parathion and paraoxon was obtained in the range of 5-100 μg L(-1) under the optimized conditions with the limit of detection (LOD) of 10 μg L(-1). The arrays have been successfully used for detection of OPs in fruits and water real samples. The new array was validated by comparison with conventional high performance liquid chromatography-mass spectrometry (HPLC-MS).

  15. Role of interfacial layer on complementary resistive switching in the TiN/HfO{sub x}/TiN resistive memory device

    SciTech Connect

    Zhang, H. Z.; Ang, D. S. Gu, C. J.; Yew, K. S.; Wang, X. P.; Lo, G. Q.

    2014-12-01

    The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO{sub x}/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO{sub x}/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO{sub x} layer. In the TiN/HfO{sub x}/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO{sub x} layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO{sub x}/IL/TiN device.

  16. PbS Quantum Dots Sensitized TiO2 Solar Cells Prepared by Successive Ionic Layer Absorption and Reaction with Different Adsorption Layers.

    PubMed

    Yi, Jie; Duan, Yanfang; Liu, Chunxia; Gao, Shaohong; Han, Xueting; An, Limin

    2016-04-01

    Lead sulfide (PbS) quantum dots (QDs) have been synthesized via successive ionic layer adsorption and reaction (SILAR) on a titanium dioxide (TiO2) nanoporous film for the fabrication of quantum dot-sensitized solar cells (QDSCs). The reaction is environmental friendly and energy saving. The green synthesized PbS QDs match the maximum remittance region of the solar spectrum and are suitable as sensitizers for TiO2 electrodes for cell devices application. PbS QDs were adsorbed in different adsorption layers in order to improve the solar cell performance. The optical properties of PbS sensitized TiO2 films were studied by scanning electron microscopy and UV-Vis absorbance spectroscopy. The photovoltaic characteristics of the PbS QDSCs were analyzed by I-V characteristics and electrochemical impedance spectroscopy. As a result, the light harvesting was enhanced with increasing SILAR adsorption layers. The maximum photovoltaic conversion efficiency of the PbS QDSCs (3.14%) was obtained at the 12 adsorption layers with the highest short circuit current density and lowest charge transfer resistance. PMID:27451735

  17. Reduction of charge recombination by an amorphous titanium oxide interlayer in layered graphene/quantum dots photochemical cells.

    PubMed

    Yang, HongBin; Guo, ChunXian; Guai, Guan Hong; Song, QuanLiang; Jiang, San Ping; Li, Chang Ming

    2011-06-01

    The effect of an amorphous TiO(x) interlayer on layered graphene/quantum dots photochemical cells has been investigated. The addition of the TiO(x) interlayer eliminates the decay of photocurrent in the initial seconds after light illumination and significantly increases the slope of the steady-state photocurrent versus the light intensity. The open-circuit voltage decay measurements further illustrate a longer electron lifetime when an amorphous TiO(x) interlayer is applied. Consequently, the photocurrent and photovoltage of the photovoltaic cell with a TiO(x) interlayer are greatly increased. This work demonstrates that the graphene/amorphous TiO(x) composite structure effectively inhibits charge recombination while enhancing charge transfer, providing a promising scaffold for quantum dots and dye-sensitized photovoltaic cells.

  18. The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

    NASA Astrophysics Data System (ADS)

    Taşçıoǧlu, Ilke; Aydemir, Umut; Altındal, Şemsettin

    2010-09-01

    The forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs) with Zn doped poly(vinyl alcohol) (PVA:Zn) interfacial layer have been investigated in the wide temperature range of 80-400 K. The conventional Richardson plot of the ln(Io/T2) versus q /kT has two linear regions: the first region (200-400 K) and the second region (80-170 K). The values of activation energy (Ea) and Richardson constant (A∗) were obtained from this plot and especially the values of A∗ are much lower than the known theoretical value for n-type Si. Also the value of Ea is almost equal to the half of the band gap energy of Si. Therefore, the Φap versus q /2kT plot was drawn to obtain the evidence of a Gaussian distribution (GD) of barrier heights (BHs) and it shows two linear region similar to ln(Io)/T2 versus q /kT plot. The analysis of I-V data based on thermionic emission of the Au/PVA:Zn/n-Si SBDs has revealed the existence of double GD with mean BH values (Φ¯B0) of 1.06 eV and 0.86 eV with standard deviation (σ ) of 0.110 eV and 0.087 V, respectively. Thus, we modified ln(Io/T2)-(qσ)2/2(kT)2 versus q /kT plot for two temperature regions (200-400 K and 80-170 K) and it gives renewed mean BHs Φ¯B0 values as 1.06 eV and 0.85 eV with Richardson constant (A∗) values 121 A/cm2 K2 and 80.4 A/cm2 K2, respectively. This obtained value of A∗=121 A/cm2 K2 is very close to the known theoretical value of 120 A/cm2 K2 for n-type Si.

  19. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.

    PubMed

    Seravalli, L; Trevisi, G; Frigeri, P; Franchi, S; Geddo, M; Guizzetti, G

    2009-07-01

    We report on a photoluminescence and photoreflectance study of metamorphic InAs/InGaAs quantum dot strain-engineered structures with and without additional InAlAs barriers intended to limit the carrier escape from the embedded quantum dots. From: (1) the substantial correspondence of the activation energies for thermal quenching of photoluminescence and the differences between wetting layer and quantum dot transition energies and (2) the unique capability of photoreflectance of assessing the confined nature of the escape states, we confidently identify the wetting layer states as the final ones of the process of carrier thermal escape from quantum dots, which is responsible for the photoluminescence quenching. Consistently, by studying structures with additional InAlAs barriers, we show that a significant reduction of the photoluminescence quenching can be obtained by the increase of the energy separation between wetting layers and quantum dot states that results from the insertion of enhanced barriers. These results provide useful indications on the light emission quenching in metamorphic quantum dot strain-engineered structures; such indications allow us to obtain light emission at room temperature in the 1.55 microm range and beyond by quantum dot nanostructures grown on GaAs substrates.

  20. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    DOE PAGES

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; et al

    2016-08-29

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used heremore » leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

  1. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    NASA Astrophysics Data System (ADS)

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.; Wanke, M. C.

    2016-08-01

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

  2. Iridium Interfacial Stack (IRIS)

    NASA Technical Reports Server (NTRS)

    Spry, David James (Inventor)

    2015-01-01

    An iridium interfacial stack ("IrIS") and a method for producing the same are provided. The IrIS may include ordered layers of TaSi.sub.2, platinum, iridium, and platinum, and may be placed on top of a titanium layer and a silicon carbide layer. The IrIS may prevent, reduce, or mitigate against diffusion of elements such as oxygen, platinum, and gold through at least some of its layers.

  3. Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer

    SciTech Connect

    Kumar, Manoj E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, Burak; Okyay, Ali Kemal E-mail: aokyay@ee.bilkent.edu.tr

    2015-03-15

    The authors demonstrate improved device performance of GaN metal–semiconductor–metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub 2}) layer on GaN. The UT-HfO{sub 2} interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO{sub 2} is significantly reduced by more than two orders of magnitude compared to those without HfO{sub 2} insertion. The photoresponsivity at 360 nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO{sub 2} on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time.

  4. Influence of post-deposition annealing on interfacial properties between GaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Wang, Hong Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Geok Ng, Serene Lay; Ji, Rong; Liu, Zhi Hong

    2014-10-13

    Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaO{sub x} layer of ZrO{sub 2} grown by atomic layer deposition (ALD) on GaN is studied. ZrO{sub 2} films were annealed in N{sub 2} atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaO{sub x} layer associated with low surface defect states due to “clean up” effect of ALD-ZrO{sub 2} on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.

  5. Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO{sub 3} buffer layer

    SciTech Connect

    Wang Yuzhan; Wee, Andrew T. S.; Cao Liang; Qi Dongchen; Chen Wei; Gao Xingyu

    2012-08-01

    We demonstrate that the interfacial hole injection barrier {Delta}{sub h} between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO{sub 3} buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO{sub 3} buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of {Delta}{sub h} is shown to be independent of the thickness of MoO{sub 3} interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO{sub 3} buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier.

  6. Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ye, Gang; Wang, Hong; Geok Ng, Serene Lay; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong

    2014-10-01

    Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaOx layer of ZrO2 grown by atomic layer deposition (ALD) on GaN is studied. ZrO2 films were annealed in N2 atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaOx layer associated with low surface defect states due to "clean up" effect of ALD-ZrO2 on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.

  7. GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO2/GeOx/Ge capacitors

    NASA Astrophysics Data System (ADS)

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Lee, Sung Bo; Park, In-Sung; Ahn, Jinho

    2016-07-01

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeOx interfacial layer (IL) between HfO2 dielectric and Ge substrate in metal/HfO2/GeOx/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeOx IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeOx IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO2 interface.

  8. A CdSe thin film: a versatile buffer layer for improving the performance of TiO2 nanorod array:PbS quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Tan, Furui; Wang, Zhijie; Qu, Shengchun; Cao, Dawei; Liu, Kong; Jiang, Qiwei; Yang, Ying; Pang, Shan; Zhang, Weifeng; Lei, Yong; Wang, Zhanguo

    2016-05-01

    To fully utilize the multiple exciton generation effects in quantum dots and improve the overall efficiency of the corresponding photovoltaic devices, nanostructuralizing the electron conducting layer turns out to be a feasible strategy. Herein, PbS quantum dot solar cells were fabricated on the basis of morphologically optimized TiO2 nanorod arrays. By inserting a thin layer of CdSe quantum dots into the interface of TiO2 and PbS, a dramatic enhancement in the power conversion efficiency from 4.2% to 5.2% was realized and the resulting efficiency is one of the highest values for quantum dot solar cells based on nanostructuralized buffer layers. The constructed double heterojunction with a cascade type-II energy level alignment is beneficial for promoting photogenerated charge separation and reducing charge recombination, thereby responsible for the performance improvement, as revealed by steady-state analyses as well as ultra-fast photoluminescence and photovoltage decays. Thus this paper provides a good buffer layer to the community of quantum dot solar cells.To fully utilize the multiple exciton generation effects in quantum dots and improve the overall efficiency of the corresponding photovoltaic devices, nanostructuralizing the electron conducting layer turns out to be a feasible strategy. Herein, PbS quantum dot solar cells were fabricated on the basis of morphologically optimized TiO2 nanorod arrays. By inserting a thin layer of CdSe quantum dots into the interface of TiO2 and PbS, a dramatic enhancement in the power conversion efficiency from 4.2% to 5.2% was realized and the resulting efficiency is one of the highest values for quantum dot solar cells based on nanostructuralized buffer layers. The constructed double heterojunction with a cascade type-II energy level alignment is beneficial for promoting photogenerated charge separation and reducing charge recombination, thereby responsible for the performance improvement, as revealed by steady

  9. Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing

    NASA Astrophysics Data System (ADS)

    Lai, Kuei-Chang; Wu, Pei-Yu; Chen, Chih-Ming; Wei, Tzu-Chien; Wu, Chung-Han; Feng, Shien-Ping

    2016-10-01

    Front-side metallization of a Si wafer was carried out using electroless deposition of nickel-phosphorus (Ni-P) catalyzed by polyvinylpyrrolidone-capped palladium nanoclusters (PVP-nPd). A 3-[2-(2-Aminoethylamino)ethylamino] propyl-trimethoxysilane (ETAS) layer was covalently bonded on the Si surface as bridge linker to the Pd cores of PVP-nPd clusters for improving adhesion between the Ni-P layer and the Si surface. To investigate the effects of an interfacial ETAS layer on the Ni silicide formation at the Ni-P/Si contact, the Ni-P-coated Si samples were thermally annealed via rapid thermal annealing (RTA) from 500°C to 900°C for 2 min. To compare with the ETAS sample, the sputtered Ni layer on Si and electroless Ni-P layer on ion-Pd-catalyzed Si (both are standard processes) were also investigated. The microstructural characterizations for the Ni-P or Ni layer deposited on the Si wafer were performed using x-ray diffractometer, scanning electron microscopy, and transmission electron microscopy. Our results showed that the ETAS layer acted as a barrier to slow the atomic diffusion of Ni toward the Si side. Although the formation of Ni silicides required a higher annealing temperature, the adhesion strength and contact resistivity measurements of annealed Ni-P/Si contacts showed satisfactory results, which were essential to the device performance and reliability during thermal annealing.

  10. Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing

    NASA Astrophysics Data System (ADS)

    Lai, Kuei-Chang; Wu, Pei-Yu; Chen, Chih-Ming; Wei, Tzu-Chien; Wu, Chung-Han; Feng, Shien-Ping

    2016-06-01

    Front-side metallization of a Si wafer was carried out using electroless deposition of nickel-phosphorus (Ni-P) catalyzed by polyvinylpyrrolidone-capped palladium nanoclusters (PVP-nPd). A 3-[2-(2-Aminoethylamino)ethylamino] propyl-trimethoxysilane (ETAS) layer was covalently bonded on the Si surface as bridge linker to the Pd cores of PVP-nPd clusters for improving adhesion between the Ni-P layer and the Si surface. To investigate the effects of an interfacial ETAS layer on the Ni silicide formation at the Ni-P/Si contact, the Ni-P-coated Si samples were thermally annealed via rapid thermal annealing (RTA) from 500°C to 900°C for 2 min. To compare with the ETAS sample, the sputtered Ni layer on Si and electroless Ni-P layer on ion-Pd-catalyzed Si (both are standard processes) were also investigated. The microstructural characterizations for the Ni-P or Ni layer deposited on the Si wafer were performed using x-ray diffractometer, scanning electron microscopy, and transmission electron microscopy. Our results showed that the ETAS layer acted as a barrier to slow the atomic diffusion of Ni toward the Si side. Although the formation of Ni silicides required a higher annealing temperature, the adhesion strength and contact resistivity measurements of annealed Ni-P/Si contacts showed satisfactory results, which were essential to the device performance and reliability during thermal annealing.

  11. Investigation and optimization of intraband electromagnetically induced transparency in strained InAs quantum dot/wetting layer structures

    NASA Astrophysics Data System (ADS)

    Parvizi, R.; Rezaei, G.

    2016-01-01

    In this work, effects of the shape and size on the optical properties and optimization of the intersubband electromagnetically induced transparency in the Infra-red region of three-dimensional strained truncated pyramid-shaped InAs/GaAs quantum dot (QD) were investigated in detail. More precisely, within the density matrix approach, the probe absorption and group velocity along with the refractive index of the medium were studied with respect to their dependence on the dephasing rates and the Rabi frequencies of the probe and coupling fields for different QD heights and wetting layer (WL) thicknesses. It is found that the slow-down factors, group index, and absorption coefficient are inversely proportional to the width of the transparency window and proportional to the depth of the transparency window. The optimized transparency window can be achieved by varying the dot height and the WL thickness such that the tall dots with thin WL thickness induce significant enhancements at a fixed resonant peak position of Rabi frequency of the coupling field. The physical reasons behind these interesting phenomena were also explained based on the polarized features of intersubband transitions.

  12. Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE

    NASA Astrophysics Data System (ADS)

    Roßbach, R.; Schulz, W.-M.; Reischle, M.; Beirne, G. J.; Hermannstädter, C.; Jetter, M.; Michler, P.

    2008-11-01

    We demonstrate the growth of InP/GaInP quantum dots on a low density InAs/GaAs island seed layer ( 107 cm-2) by metal-organic vapor phase epitaxy. The strain produced by the underlying InAs islands results in a distinct bimodal size distribution of the InP/GaInP quantum dot layer where large dome shaped structures and small quantum dots could be observed using atomic force microscopy. Using μ-photoluminescence only luminescence from the small high energetic InP-QDs could be recorded with emission linewidths of around 140 μeV. Autocorrelation measurements confirmed the zero dimensionality of the InP quantum dots.

  13. Transport properties of interfacial Si-rich layers formed on silicate minerals during weathering: Implications for environmental concerns

    NASA Astrophysics Data System (ADS)

    Daval, Damien; Rémusat, Laurent; Bernard, Sylvain; Wild, Bastien; Micha, Jean-Sébastien; Rieutord, François; Fernandez-Martinez, Alejandro

    2015-04-01

    The dissolution of silicate minerals is of primary importance for various processes ranging from chemical weathering to CO2 sequestration. Whether it determines the rates of soil formation, CO2 uptake and its impact on climate change, channeling caused by hydrothermal circulation in reservoirs of geothermal power plants, durability of radioactive waste confinement glasses or geological sequestration of CO2, the same strategy is commonly applied for determining the long term evolution of fluid-rock interactions. This strategy relies on a bottom-up approach, where the kinetic rate laws governing silicate mineral dissolution are determined from laboratory experiments. However, a long-standing problem regarding this approach stems from the observation that laboratory-derived dissolution rates overestimate their field counterparts by orders of magnitude, casting doubt on the accuracy and relevance of predictions based on reactive-transport simulations. Recently [1], it has been suggested that taking into account the formation of amorphous Si-rich surface layers (ASSL) as a consequence of mineral dissolution may contribute to decrease the large gap existing between laboratory and natural rates. Our ongoing study is aimed at deciphering the extent to which ASSL may represent a protective entity which affects the dissolution rate of the underlying minerals, both physically (passivation) and chemically (by promoting the formation of a local chemical medium which significantly differs from that of the bulk solution). Our strategy relies on the nm-scale measurement of the physicochemical properties (diffusivity, thickness and density) of ASSL formed on cleavages of a model mineral (wollastonite) and their evolution as a function of reaction progress. Our preliminary results indicate that the diffusivity of nm-thick ASSL formed on wollastonite surface is ~1,000,000 times smaller than that reported for an aqueous medium, as estimated from the monitoring of the progression of a

  14. Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

    NASA Astrophysics Data System (ADS)

    An, Yanbin; Behnam, Ashkan; Pop, Eric; Bosman, Gijs; Ural, Ant

    2015-09-01

    Metal-semiconductor Schottky junction devices composed of chemical vapor deposition grown monolayer graphene on p-type silicon substrates are fabricated and characterized. Important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance, are extracted from forward bias current-voltage characteristics using a previously established method modified to take into account the interfacial native oxide layer present at the graphene/silicon junction. It is found that the ideality factor can be substantially increased by the presence of the interfacial oxide layer. Furthermore, low frequency noise of graphene/silicon Schottky junctions under both forward and reverse bias is characterized. The noise is found to be 1/f dominated and the shot noise contribution is found to be negligible. The dependence of the 1/f noise on the forward and reverse current is also investigated. Finally, the photoresponse of graphene/silicon Schottky junctions is studied. The devices exhibit a peak responsivity of around 0.13 A/W and an external quantum efficiency higher than 25%. From the photoresponse and noise measurements, the bandwidth is extracted to be ˜1 kHz and the normalized detectivity is calculated to be 1.2 ×109 cm Hz1/2 W-1. These results provide important insights for the future integration of graphene with silicon device technology.

  15. Consequences of anode interfacial layer deletion. HCl-treated ITO in P3HT:PCBM-based bulk-heterojunction organic photovoltaic devices.

    PubMed

    Irwin, Michael D; Liu, Jun; Leever, Benjamin J; Servaites, Jonathan D; Hersam, Mark C; Durstock, Michael F; Marks, Tobin J

    2010-02-16

    In studies to simplify the fabrication of bulk-heterojunction organic photovoltaic (OPV) devices, it was found that when glass/tin-doped indium oxide (ITO) substrates are treated with dilute aqueous HCl solutions, followed by UV ozone (UVO), and then used to fabricate devices of the structure glass/ITO/P3HT:PCBM/LiF/Al, device performance is greatly enhanced. Light-to-power conversion efficiency (Eff) increases from 2.4% for control devices in which the ITO surface is treated only with UVO to 3.8% with the HCl + UVO treatment--effectively matching the performance of an identical device having a PEDOT:PSS anode interfacial layer. The enhancement originates from increases in V(OC) from 463 to 554 mV and FF from 49% to 66%. The modified-ITO device also exhibits a 4x enhancement in thermal stability versus an identical device containing a PEDOT:PSS anode interfacial layer. To understand the origins of these effects, the ITO surface is analyzed as a function of treatment by ultraviolet photoelectron spectroscopy work function measurements, X-ray photoelectron spectroscopic composition analysis, and atomic force microscopic topography and conductivity imaging. Additionally, a diode-based device model is employed to further understand the effects of ITO surface treatment on device performance.

  16. Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer

    NASA Astrophysics Data System (ADS)

    Dev, Sachin; Remesh, Nayana; Rawal, Yaksh; Manik, Prashanth Paramahans; Wood, Bingxi; Lodha, Saurabh

    2016-03-01

    This work demonstrates the benefit of a lower contact barrier height, and hence reduced contact resistivity (ρc), using a low work-function metal (Yb) in unpinned metal-interfacial layer-semiconductor (MIS) contacts on n-type Ge. Fermi-level unpinning in MIS contacts on n-Ge is first established by introducing a 2 nm TiO2-x interfacial layer between various contact metals (Yb, Ti, Ni, Pt) and n-Ge. Further, Yb/TiO2-x/n-Ge MIS contact diodes exhibit higher current densities (up to 100×) and lower effective contact barrier height (up to 30%) versus Ti/TiO2-x control devices over a wide range of TiO2-x thickness (1-5 nm). Finally, low work-function Yb combined with doped TiO2-x having a low conduction band offset with Ge and high substrate doping (n+-Ge: 2.5 ×1019 cm-3) is shown to result in an ultra-low ρc value of 1.4 × 10-8 Ω cm2, 10 × lower than Ti/TiO2-x control devices.

  17. The effects of Bi4Ti3O12 interfacial ferroelectric layer on the dielectric properties of Au/n-Si structures

    NASA Astrophysics Data System (ADS)

    Gökçen, Muharrem; Yıldırım, Mert

    2015-06-01

    Au/n-Si metal-semiconductor (MS) and Au/Bi4Ti3O12/n-Si metal-ferroelectric-semiconductor (MFS) structures were fabricated and admittance measurements were held between 5 kHz and 1 MHz at room temperature so that dielectric properties of these structures could be investigated. The ferroelectric interfacial layer Bi4Ti3O12 decreased the polarization voltage by providing permanent dipoles at metal/semiconductor interface. Depending on different mechanisms, dispersion behavior was observed in dielectric constant, dielectric loss and loss tangent versus bias voltage plots of both MS and MFS structures. The real and imaginary parts of complex modulus of MFS structure take smaller values than those of MS structure, because permanent dipoles in ferroelectric layer cause a large spontaneous polarization mechanism. While the dispersion in AC conductivity versus frequency plots of MS structure was observed at high frequencies, for MFS structure it was observed at lower frequencies.

  18. Corrugated single layer templates for molecules: From h-BN nanomesh to graphene based quantum dot arrays

    NASA Astrophysics Data System (ADS)

    Ma, Hai-Feng; Thomann, Mario; Schmidlin, Jeanette; Roth, Silvan; Morscher, Martin; Greber, Thomas

    2010-12-01

    Functional nano-templates enable self-assembly of otherwise impossible arrangements of molecules. A particular class of such templates is that of sp 2 hybridized single layers of hexagonal boron nitride or carbon (graphene) on metal supports. If the substrate and the single layer have a lattice mismatch, superstructures are formed. On substrates like rhodium or ruthenium these superstructures have unit cells with ˜3-nm lattice constant. They are corrugated and contain sub-units, which behave like traps for molecules or quantum dots, which are small enough to become operational at room temperature. For graphene on Rh(111) we emphasize a new structural element of small extra hills within the corrugation landscape. For the case of molecules like water it is shown that new phases assemble on such templates, and that they can be used as “nano-laboratories” where many individual processes are studied in parallel. Furthermore, it is shown that the h-BN/Rh(111) nanomesh displays a strong scanning tunneling microscopy-induced luminescence contrast within the 3 nm unit cell which is a way to address trapped molecules and/or quantum dots.

  19. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    SciTech Connect

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  20. Mapping bound plasmon propagation on a nanoscale stripe waveguide using quantum dots: influence of spacer layer thickness

    PubMed Central

    Perera, Chamanei S; Funston, Alison M; Cheng, Han-Hao

    2015-01-01

    Summary In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides. PMID:26665075

  1. Mapping bound plasmon propagation on a nanoscale stripe waveguide using quantum dots: influence of spacer layer thickness.

    PubMed

    Perera, Chamanei S; Funston, Alison M; Cheng, Han-Hao; Vernon, Kristy C

    2015-01-01

    In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides. PMID:26665075

  2. Tuning the dead-layer behavior of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} via interfacial engineering

    SciTech Connect

    Peng, R.; Xu, H. C.; Xia, M.; Zhao, J. F.; Xie, X.; Xu, D. F.; Xie, B. P. Feng, D. L.

    2014-02-24

    The dead-layer behavior, deterioration of the bulk properties in near-interface layers, restricts the applications of many oxide heterostructures. We present the systematic study of the dead-layer in La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} grown by ozone-assisted molecular beam epitaxy. Dead-layer behavior is systematically tuned by varying the interfacial doping, while unchanged with varied doping at any other atomic layers. In situ photoemission and low energy electron diffraction measurements suggest intrinsic oxygen vacancies at the surface of ultra-thin La{sub 0.67}Sr{sub 0.33}MnO{sub 3}, which are more concentrated in thinner films. Our results show correlation between interfacial doping, oxygen vacancies, and the dead-layer, which can be explained by a simplified electrostatic model.

  3. Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

    NASA Astrophysics Data System (ADS)

    Wu, Li-Fan; Zhang, Yu-Ming; Lv, Hong-Liang; Zhang, Yi-Men

    2016-10-01

    Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37 × 10-6 A/cm2 and 3.22 × 10-6 A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q ot) value and the interface state density (D it). Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

  4. Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer

    NASA Astrophysics Data System (ADS)

    Chen, Fei; Lin, Qingli; Wang, Hongzhe; Wang, Lei; Zhang, Fengjuan; Du, Zuliang; Shen, Huaibin; Li, Lin Song

    2016-08-01

    In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT:PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in PEDOT:PSS, the optimal devices were obtained with ~22-nm-sized Au NP dopant at the concentration with an optical density (OD) of 0.21. Highly bright green QLEDs with a maximum external quantum efficiency (EQE) of 8.2 % and a current efficiency of 29.1 cd/A exhibit 80 % improvement compared with devices without Au NP dopants. The improved performance may be attributed to the significant increase in the hole injection rate as a result of the introduction of Au NPs and the good matching between the resonance frequency of the localized surface plasmon resonance (LSPR) generated by the Au NPs and the emission band of QD layer, as well as the suppressed Auger recombination of QD layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons. These results are helpful for fabricating high-performance QD-based applications, such as full-color displays and solid-state lighting.

  5. Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Gupta, Richa; Rajput, Renu; Prasher, Rakesh; Vaid, Rakesh

    2016-09-01

    We report the fabrication of an ultra-thin silicon oxynitride (SiON) as an interfacial layer (IL) for n-Si/ALD-HfO2 gate stack with reduced leakage current. The XRD, AFM, FTIR, FESEM and EDAX characterizations have been performed for structural and morphological studies. Electrical parameters such as dielectric constant (K), interface trap density (Dit), leakage current density (J), effective oxide charge (Qeff), barrier height (Φbo), ideality factor (ƞ), breakdown-voltage (Vbr) and series resistance (Rs) were extracted through C-V, G-V and I-V measurements. The determined values of K, Dit, J, Qeff, Φbo, ƞ, Vbr and Rs are 14.4, 0.5 × 10 11 eV-1 cm-2, 2.2 × 10-9 A/cm2, 0.3 × 1013 cm-2, 0.42, 2.1, -0.33 and 14.5 MΩ respectively. SiON growth prior to HfO2 deposition has curtailed the problem of high leakage current density and interfacial traps due to sufficient amount of N2 incorporated at the interface.

  6. Readout Durability Improvement of Super-Resolution Near-Field Structure Discs with PtOx-SiO2 Recording and GeNy Interfacial Layers

    NASA Astrophysics Data System (ADS)

    Shima, Takayuki; Yamakawa, Yuzo; Tominaga, Junji

    2007-02-01

    Two dielectric materials were added to a super-resolution near-field optical disc structure (super-RENS) to improve the readout durability. PtOx-SiO2 (Pt8.4Si21.1O70.5) layers showed O2 desorption for temperatures above 200 °C and were usable as write-once recording layers. The GeNy interfacial layers located between the Sb75Te25 and (ZnS)85(SiO2)15 layers suppressed degradation in the reflected light intensity from the disc, i.e., maintained the recorded structure as is, to at least 5× 104 readout cycles using a recorded pattern designed to accelerate disc deterioration. The carrier-to-noise ratio (CNR) obtained for 100-nm marks (laser wavelength: 405 nm, numerical aperture: 0.65) was about 43 dB. It was possible to readout 2.6× 105 cycles before the CNR decreased by 3 dB. This represents an improvement of a factor of 70 over the readout durability of a conventional super-RENS structure.

  7. Universal nanopatternable interfacial bonding.

    PubMed

    Ding, Yuzhe; Garland, Shaun; Howland, Michael; Revzin, Alexander; Pan, Tingrui

    2011-12-01

    A nanopatternable polydimethylsiloxane (PDMS) oligomer layer is demonstrated as an interfacial adhesive for its intrinsic transferability and universal adhesiveness. Utilizing the well-established surface modification and bonding techniques of PDMS surfaces, irreversible bonding is formed (up to 400 kPa) between a wide range of substrate pairs, representing ones within and across different materials categories, including metals, ceramics, thermoset, and thermoplastic polymers.

  8. Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu; Choi, Won Jun

    2015-11-01

    We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (Ec-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (Ec-0.35 eV) and M4 (Ec-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC.

  9. Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

    SciTech Connect

    Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu; Choi, Won Jun

    2015-11-16

    We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (E{sub c}-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (E{sub c}-0.35 eV) and M4 (E{sub c}-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC.

  10. The effect of metal nano particle on optical absorption coefficient of multi-layer spherical quantum dot

    NASA Astrophysics Data System (ADS)

    Zamani, N.; Keshavarz, A.; Nadgaran, H.

    2016-06-01

    In this paper, we investigate the optical absorption coefficient of hybrid structure consisting of metal nano particle (MNP) coupled to multi-layer spherical quantum dot (MSQD). Energy eigenvalues and eigenfunctions of Schrödinger equation in this structure are obtained by using numerical solution (by the fourth-order Runge-Kutta method). The effect of MNP in the vicinity of MSQD is calculated by considering local field theory. Then the variation of optical absorption coefficient hybrid structure is calculated. The results show that the presence of MNP near MSQD enhances the optical absorption coefficient. Also, by changing the distance between MNP and MSQD and radius of MNP, variation of optical absorption coefficient and refractive index changes are introduced.

  11. Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-11-01

    We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

  12. Design and implementation of an efficient single layer five input majority voter gate in quantum-dot cellular automata.

    PubMed

    Bahar, Ali Newaz; Waheed, Sajjad

    2016-01-01

    The fundamental logical element of a quantum-dot cellular automata (QCA) circuit is majority voter gate (MV). The efficiency of a QCA circuit is depends on the efficiency of the MV. This paper presents an efficient single layer five-input majority voter gate (MV5). The structure of proposed MV5 is very simple and easy to implement in any logical circuit. This proposed MV5 reduce number of cells and use conventional QCA cells. However, using MV5 a multilayer 1-bit full-adder (FA) is designed. The functional accuracy of the proposed MV5 and FA are confirmed by QCADesigner a well-known QCA layout design and verification tools. Furthermore, the power dissipation of proposed circuits are estimated, which shows that those circuits dissipate extremely small amount of energy and suitable for reversible computing. The simulation outcomes demonstrate the superiority of the proposed circuit. PMID:27330902

  13. Effect of nanoscale SubPc interfacial layer on the performance of inverted polymer solar cells based on P3HT/PC71BM.

    PubMed

    Kim, Jung Yong; Noh, Seunguk; Nam, Young Min; Kim, Jun Young; Roh, Jeongkyun; Park, Myeongjin; Amsden, Jason J; Yoon, Do Y; Lee, Changhee; Jo, Won Ho

    2011-11-01

    The effect of a nanoscale boron subphthalocyanine chloride (SubPc) interfacial layer on the performance of inverted polymer solar cells based on poly (3-hexyl thiophene) (P3HT) and [6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) was studied. When a 1 nm SubPc layer was introduced between the active layer (P3HT:PC(71)BM) and MoO(x) in the device with ITO/ZnO/P3HT:PC(71)BM/SubPc/MoO(x)/Al configuration, the power conversion efficiency (PCE) was increased from 3.42 (without SubPc) to 3.59%. This improvement is mainly attributed to the enhanced open-circuit voltage from 0.62 to 0.64 V. When the Flory-Huggins interaction parameters were estimated from the solubility parameters through the contact angle measurement, it revealed that the interaction between SubPc and PC(71)BM is more attractive than that between SubPc and P3HT at the interface of P3HT:PC(71)BM/SubPc, through which charges are well transported from the active layer to the anode. This is supported by a decrease of the contact resistance from 5.49 (SubPc 0 nm) to 0.94 MΩ cm (SubPc 1 nm). The photoelectron spectra provide another evidence for the enhanced PCE, exhibiting that the 1 nm thick SubPc layer extracts more photoelectrons from the active layer than other thicknesses. PMID:21970412

  14. Motional Resistance Evaluation of the Quartz Crystal Microbalance to Study the Formation of a Passive Layer in the Interfacial Region of a Copper|Diluted Sulfuric Solution.

    PubMed

    Cuenca, Alejandro; Agrisuelas, Jerónimo; Catalán, Raquel; García-Jareño, José J; Vicente, Francisco

    2015-09-01

    A hyphenated technique based on vis–NIR spectroscopy and electrochemical quartz crystal microbalance with motional resistance monitoring was employed to investigate the dissolution of copper in acid media. Changes in motional resistance, current, mass, and absorbance during copper dissolution allow the evolution of the interfacial region of copper|diluted sulfuric solution to be understood. In particular, motional resistance is presented in this work as a useful tool to observe the evolution of the passive layer at the interface. During the forced copper electrodissolution in sulfuric solution, SO4(2–) favors the formation of soluble [Cu(H2O)6]2+. On the contrary, OH– involves the formation of Cu(H2O)4(OH)2, which precipitates on the electrode surface. The high viscosity and density of Cu(H2O)4(OH)2 formed on surface causes an increase in motional resistance independently of resonance frequency changes. During the copper corrosion in a more natural acidic environment, the results of electrochemical impedance spectra at open circuit potential indicate that corrosion is controlled by the diffusion of copper to the solution at short experimental times. However, copper diffusion is hindered by the formation of a passive layer on the electrode surface at long experimental times. During the copper corrosion, motional resistance shows an oscillatory response because of an oscillatory formation/dissolution of the passive later. Vis–NIR spectroscopy and electrochemical quartz crystal microbalance with motional resistance monitoring give new perspectives for reaching a deep understanding of metal corrosion processes and, in a future, other interfacial processes such as the catalysis or adsorption of (bio)molecules.

  15. Manipulating Thermal Conductivity by Interfacial Modification of Misfit-Layered Cobaltites Ca3Co4O9

    NASA Astrophysics Data System (ADS)

    Fujii, Susumu; Yoshiya, Masato

    2016-03-01

    The phonon thermal conductivities of misfit-layered Ca3Co4O9, Sr3Co4O9, and Ba3Co4O9 were calculated using the perturbed molecular dynamics method to clarify the impact of lattice misfit on the phonon thermal conduction in misfit-layered cobaltites. Substitution of Sr and Ba for Ca substantially modified the magnitude of the lattice misfit between the CoO2 and rock salt (RS) layers, because of the different ionic radii, increasing overall phonon thermal conductivity. Further analyses with intentionally changed atomic masses of Ca, Sr, or Ba revealed that smaller ionic radius at the Ca site in the RS layer, instead of heavier atomic mass, is a critical factor suppressing the overall thermal conductivity of Ca3Co4O9, since it determines not only the magnitude of lattice misfit but also the dynamic interference between the two layers, which governs the phonon thermal conduction in the CoO2 and RS layers. This concept was demonstrated for Sr-doped Ca3Co4O9 as an example of atomistic manipulation for better thermoelectric properties. Phonon thermal conductivities not only in the RS layer but also in the CoO2 layer were reduced by the substitution of Sr for Ca. These results provide another strategy to improve the thermal conductivity of this class of misfit cobaltites, that is, to control the thermal conductivity of the CoO2 layer responsible for electronic and thermal conductivity by atomistic manipulation in the RS layer adjacent to the CoO2 layer.

  16. Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures

    SciTech Connect

    Seravalli, L.; Trevisi, G.; Frigeri, P.

    2013-11-14

    In this work, we calculate the two-dimensional quantum energy system of the In(Ga)As wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model calculations were carried on the basis of realistic material parameters taking in consideration their dependence on the strain relaxation of the metamorphic buffer; results of the calculations were validated against available literature data. Model results confirmed previous hypothesis on the extrinsic nature of the disappearance of wetting layer emission in metamorphic structures with high In composition. We also show how, by adjusting InGaAs metamorphic buffer parameters, it could be possible: (i) to spatially separate carriers confined in quantum dots from wetting layer carriers, (ii) to create an hybrid 0D-2D system, by tuning quantum dot and wetting layer levels. These results are interesting not only for the engineering of quantum dot structures but also for other applications of metamorphic structures, as the two design parameters of the metamorphic InGaAs buffer (thickness and composition) provide additional degrees of freedom to control properties of interest.

  17. Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects

    SciTech Connect

    Kosemura, Daisuke Mizukami, Yuki; Takei, Munehisa; Numasawa, Yohichiroh; Ogura, Atsushi; Ohshita, Yoshio

    2014-01-15

    100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ∼ 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

  18. MgO-hybridized TiO{sub 2} interfacial layers assisting efficiency enhancement of solid-state dye-sensitized solar cells

    SciTech Connect

    Sakai, Nobuya; Ikegami, Masashi; Miyasaka, Tsutomu

    2014-02-10

    Interfacial modification of a thin TiO{sub 2} compact layer (T-CL) by hybridization with MgO enhanced the quantum conversion efficiency of solid-state dye-sensitized solar cells (ssDSSCs) comprising a multilayer structure of transparent electrode/T-CL/dye-sensitized mesoporous TiO{sub 2}/hole conductor/metal counter electrode. The Mg(CH{sub 3}COO){sub 2} treatment was employed to introduce a MgO-TiO{sub 2} CL (T/M-CL), which enhanced the physical connection and conduction between the CL and mesoporous semiconductor layer as a consecutive interface, owing to the dehydration reaction of Mg(CH{sub 3}COO){sub 2}. The photocurrent density of ssDSSC was increased 33% by the T/M-CL compared with the T-CL, using an equivalent amount of adsorbed dye. The ssDSSC with the T/M-CL yielded the highest efficiency of 4.02% under irradiation at 100 mW cm{sup −2}. The electrical impedance spectroscopy showed that the charge-transfer resistance (R{sub ct}) of the photoelectrode with T/M-CL was reduced by 300 Ω from the reference non-treated T-CL electrode. Characterized by the intrinsically low R{sub ct} of the compact layer, the T/M-CL is capable of improving the photovoltaic performance of solid-state sensitized mesoscopic solar cells.

  19. Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO{sub 2} on AlGaN

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-09-15

    Atomic layer deposition (ALD) of ZrO{sub 2} on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, parasitic oxidation during deposition is largely enhanced on BOE treated AlGaN surface. Due to the high reactivity of Al atoms, more prominent oxidation of Al atoms is observed, which leads to thicker interfacial layer formed on BOE treated surface. The results suggest that native oxide on AlGaN surface may serve as a protecting layer to inhibit the surface from further parasitic oxidation during ALD. The findings provide important process guidelines for the use of ALD ZrO{sub 2} and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications.

  20. Debonding behavior between [beta]-Si[sub 3]N[sub 4] whiskers and oxynitride glasses with or without an epitaxial [beta]-SiAlON interfacial layer

    SciTech Connect

    Sun, E.Y.; Becher, P.F.; Hsueh, C.H.; Painter, G.S.; Waters, S.B.; Hwang, S.L. . Metals and Ceramics Div.); Hoffmann, M.J. . Inst. of Ceramics in Mechanical Engineering)

    1999-07-09

    In order to gain insight on the influence of intergranular glass on the fracture toughness of silicon nitride, the debonding behavior of the interface between the prismatic faces of [beta]-Si[sub 3]N[sub 4] whiskers and oxynitride glasses was investigated in model systems based on various Si-(Al)-Y(Ln)-O-N (Ln: rare-earth) oxynitride glasses. It was found that while the interfacial debonding strength increased when an epitaxial [beta][prime]-SiAlON layer grew on the [beta]-Si[sub 3]N[sub 4] whiskers, the critical angle for debonding was lowered with increasing Al and O concentrations in the SiAlON layer. Only in the absence of a SiAlON epitaxial layer, were debonding conditions altered by residual stresses imposed on the interface due to thermal-mechanical mismatch. A possible explanation for the effect of SiAlON formation and its composition on the debonding behavior is suggested by first-principles atomic cluster calculations. It is concluded that by tailoring the densification additives and hence the chemistry of the intergranular glass, it is possible to improve the fracture resistance of silicon nitride.

  1. Silica-Polymer Dual Layer-Encapsulated Quantum Dots with Remarkable Stability

    PubMed Central

    Hu, Xiaoge; Gao, Xiaohu

    2010-01-01

    Semiconductor quantum dots (QDs) are important fluorescent probes due to their high brightness, multiplexing capability, and photostability. However, applications in quantitative and in vivo imaging are hampered by their sensitivity to chemical environments and potential toxicity. Here we report a surprising finding that the combination of silica and amphiphilic polymer can stabilize CdSe/ZnS QDs in a broad range of chemical conditions including strong acidic solutions, which is unavailable for any of the current encapsulation technologies (e.g., mercapto compounds, silica, and amphiphilic polymers) used alone. We further demonstrate the use of these ultrastable QDs as internal references in pH sensing applications. We expect this work will open exciting opportunities for in vivo and quantitative applications, and may help solve the toxicity problem of QDs. PMID:20863118

  2. Color tone and interfacial microstructure of white oxide layer on commercially pure Ti and Ti-Nb-Ta-Zr alloys

    NASA Astrophysics Data System (ADS)

    Miura-Fujiwara, Eri; Mizushima, Keisuke; Watanabe, Yoshimi; Kasuga, Toshihiro; Niinomi, Mitsuo

    2014-11-01

    In this study, the relationships among oxidation condition, color tone, and the cross-sectional microstructure of the oxide layer on commercially pure (CP) Ti and Ti-36Nb-2Ta-3Zr-0.3O were investigated. “White metals” are ideal metallic materials having a white color with sufficient strength and ductility like a metal. Such materials have long been sought for in dentistry. We have found that the specific biomedical Ti alloys, such as CP Ti, Ti-36Nb-2Ta-3Zr-0.3O, and Ti-29Nb-13Ta-4.6Zr, form a bright yellowish-white oxide layer after a particular oxidation heat treatment. The brightness L* and yellowness +b* of the oxide layer on CP Ti and Ti-36Nb-2Ta-3Zr-0.3O increased with heating time and temperature. Microstructural observations indicated that the oxide layer on Ti-29Nb-13Ta-4.6Zr and Ti-36Nb-2Ta-3Zr-0.3O was dense and firm, whereas a piecrust-like layer was formed on CP Ti. The results obtained in this study suggest that oxide layer coating on Ti-36Nb-2Ta-3Zr-0.3O is an excellent technique for dental applications.

  3. Single step deposition of an interacting layer of a perovskite matrix with embedded quantum dots

    NASA Astrophysics Data System (ADS)

    Ngo, Thi Tuyen; Suarez, Isaac; Sanchez, Rafael S.; Martinez-Pastor, Juan P.; Mora-Sero, Ivan

    2016-07-01

    Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by photoluminescence and electroluminescence experiments. The radiative exciplex relaxation is centered in the near infrared region (NIR), ~1200 nm, which corresponds to lower energies than the corresponding band gap of both perovskite (PS) and QDs. Our approach allows the fabrication of multi-wavelength light emitting diodes (LEDs) based on a PS matrix with embedded QDs, which show considerably low turn-on potentials. The presence of the exciplex state of PS and QDs opens up a broad range of possibilities with important implications in both LEDs and solar cells.Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by photoluminescence and

  4. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells

    NASA Astrophysics Data System (ADS)

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-07-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells.

  5. Signal Amplification Strategy Based on TiO2-Nanotube Layers and Nanobeads Carrying Quantum Dots for Electrochemiluminescent Immunosensors

    PubMed Central

    Gao, Zhi-Da; Zhuang, Qian-Lan; Song, Yan-Yan; Lee, Kiyoung; Schmuki, Patrik

    2013-01-01

    Self-organized TiO2-nanotube layers can be used for immunoassay-type sensing in combination with amplifying CdTe labels in a direct and very sensitive electrochemiluminescent (ECL) configuration. Key properties for this method are the conductivity of the TiO2 nanotubes, and their transparency for light emitted from the CdTe labels at approximately 2.4 eV. To demonstrate the potential of this platform, we constructed a sandwich-type immunoassay onto the TiO2-nanotube wall with a layer of (3-aminopropyl)triethoxysilane as the cross-linker for antibody immobilization. For the counter part of the sandwich, we created an amplification system consisting of TiO2 nanobeads carrying the secondary antibody and multiple CdTe quantum dots (multiQD). For antigen (IgG) detection, we find that this combination of 3D transparent electrode with multiQD labels allows for an ECL detection limit of 0.05 pg mL−1 and a linearity of the signal in the range of 0.1–108 pg mL−1. PMID:24551545

  6. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells.

    PubMed

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-01-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells. PMID:27453530

  7. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells

    PubMed Central

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-01-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells. PMID:27453530

  8. Polyethylenimine Interfacial Layers in Inverted Organic Photovoltaic Devices: Effects of Ethoxylation and Molecular Weight on Efficiency and Temporal Stability.

    PubMed

    Courtright, Brett A E; Jenekhe, Samson A

    2015-12-01

    We report a comparative study of polyethylenimine (PEI) and ethoxylated-polyethylenimine (PEIE) cathode buffer layers in high performance inverted organic photovoltaic devices. The work function of the indium-tin oxide (ITO)/zinc oxide (ZnO) cathode was reduced substantially (Δφ = 0.73-1.09 eV) as the molecular weight of PEI was varied from 800 g mol(-1) to 750 000 g mol(-1) compared with the observed much smaller reduction when using a PEIE thin film (Δφ = 0.56 eV). The reference inverted polymer solar cells based on the small band gap polymer PBDTT-FTTE (ITO/ZnO/PBDTT-FTTE:PC70BM/MoO3/Ag), without a cathode buffer layer, had an average power conversion efficiency (PCE) of 6.06 ± 0.22%. Incorporation of a PEIE cathode buffer layer in the same PBDTT-FTTE:PC70BM blend devices gave an enhanced performance with a PCE of 7.37 ± 0.53%. In contrast, an even greater photovoltaic efficiency with a PCE of 8.22 ± 0.10% was obtained in similar PBDTT-FTTE:PC70BM blend solar cells containing a PEI cathode buffer layer. The temporal stability of the inverted polymer solar cells was found to increase with increasing molecular weight of the cathode buffer layer. The results show that PEI is superior to PEIE as a cathode buffer layer in high performance organic photovoltaic devices and that the highest molecular weight PEI interlayer provides the highest temporal stability. PMID:26550983

  9. Polyethylenimine Interfacial Layers in Inverted Organic Photovoltaic Devices: Effects of Ethoxylation and Molecular Weight on Efficiency and Temporal Stability.

    PubMed

    Courtright, Brett A E; Jenekhe, Samson A

    2015-12-01

    We report a comparative study of polyethylenimine (PEI) and ethoxylated-polyethylenimine (PEIE) cathode buffer layers in high performance inverted organic photovoltaic devices. The work function of the indium-tin oxide (ITO)/zinc oxide (ZnO) cathode was reduced substantially (Δφ = 0.73-1.09 eV) as the molecular weight of PEI was varied from 800 g mol(-1) to 750 000 g mol(-1) compared with the observed much smaller reduction when using a PEIE thin film (Δφ = 0.56 eV). The reference inverted polymer solar cells based on the small band gap polymer PBDTT-FTTE (ITO/ZnO/PBDTT-FTTE:PC70BM/MoO3/Ag), without a cathode buffer layer, had an average power conversion efficiency (PCE) of 6.06 ± 0.22%. Incorporation of a PEIE cathode buffer layer in the same PBDTT-FTTE:PC70BM blend devices gave an enhanced performance with a PCE of 7.37 ± 0.53%. In contrast, an even greater photovoltaic efficiency with a PCE of 8.22 ± 0.10% was obtained in similar PBDTT-FTTE:PC70BM blend solar cells containing a PEI cathode buffer layer. The temporal stability of the inverted polymer solar cells was found to increase with increasing molecular weight of the cathode buffer layer. The results show that PEI is superior to PEIE as a cathode buffer layer in high performance organic photovoltaic devices and that the highest molecular weight PEI interlayer provides the highest temporal stability.

  10. Anode modification of polymer light-emitting diode using graphene oxide interfacial layer: The role of ultraviolet-ozone treatment

    NASA Astrophysics Data System (ADS)

    Jiang, Xiao-Chen; Li, Yan-Qing; Deng, Yan-Hong; Zhuo, Qi-Qi; Lee, Shuit-Tong; Tang, Jian-Xin

    2013-08-01

    A simple and efficient method has been developed to modify the anode interface of polymer light-emitting diode by incorporating solution-processable graphene oxide as hole transport layer. Interface engineering of ultraviolet-ozone treatment on graphene oxide is demonstrated to dramatically enhance the electrical properties, leading to 15% increase in efficiency compared to that with a traditionally used poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene) layer. As determined by photoelectron spectroscopy and impedance spectroscopy, an optimized ultraviolet-ozone treatment results in a more favorable energy level alignment and a decrease in series resistance, which can subsequently facilitate charge injection at the anodic interface.

  11. Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer.

    PubMed

    Adinolfi, Valerio; Kramer, Illan J; Labelle, André J; Sutherland, Brandon R; Hoogland, S; Sargent, Edward H

    2015-01-27

    The performance of photodetectors is judged via high responsivity, fast speed of response, and low background current. Many previously reported photodetectors based on size-tuned colloidal quantum dots (CQDs) have relied either on photodiodes, which, since they are primary photocarrier devices, lack gain; or photoconductors, which provide gain but at the expense of slow response (due to delayed charge carrier escape from sensitizing centers) and an inherent dark current vs responsivity trade-off. Here we report a photojunction field-effect transistor (photoJFET), which provides gain while breaking prior photoconductors' response/speed/dark current trade-off. This is achieved by ensuring that, in the dark, the channel is fully depleted due to a rectifying junction between a deep-work-function transparent conductive top contact (MoO3) and a moderately n-type CQD film (iodine treated PbS CQDs). We characterize the rectifying behavior of the junction and the linearity of the channel characteristics under illumination, and we observe a 10 μs rise time, a record for a gain-providing, low-dark-current CQD photodetector. We prove, using an analytical model validated using experimental measurements, that for a given response time the device provides a two-orders-of-magnitude improvement in photocurrent-to-dark-current ratio compared to photoconductors. The photoJFET, which relies on a junction gate-effect, enriches the growing family of CQD photosensitive transistors. PMID:25558809

  12. Single step deposition of an interacting layer of a perovskite matrix with embedded quantum dots.

    PubMed

    Ngo, Thi Tuyen; Suarez, Isaac; Sanchez, Rafael S; Martinez-Pastor, Juan P; Mora-Sero, Ivan

    2016-08-14

    Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by photoluminescence and electroluminescence experiments. The radiative exciplex relaxation is centered in the near infrared region (NIR), ≈1200 nm, which corresponds to lower energies than the corresponding band gap of both perovskite (PS) and QDs. Our approach allows the fabrication of multi-wavelength light emitting diodes (LEDs) based on a PS matrix with embedded QDs, which show considerably low turn-on potentials. The presence of the exciplex state of PS and QDs opens up a broad range of possibilities with important implications in both LEDs and solar cells. PMID:27437778

  13. Interfacial effect on the electrochemical properties of the layered graphene/metal sulfide composites as anode materials for Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Lv, Yagang; Chen, Biao; Zhao, Naiqin; Shi, Chunsheng; He, Chunnian; Li, Jiajun; Liu, Enzuo

    2016-09-01

    The layered graphene/metal sulfide composites exhibit excellent electrochemical properties as anode materials for lithium ion battery, due to the synergistic effect between metal sulfide and graphene which still needs to be further understood. In this study, Li adsorption and diffusion on MoS2 and SnS2 monolayers and Li2S surface, as well as at their interfaces with graphene, are systematically investigated through first-principles calculations. The analysis of charge density difference, Bader charge, and density of states indicates that the adsorbed Li atoms interact with both the S atoms at metal sulfide surfaces and C atoms in graphene, resulting in larger Li adsorption energies at the interfaces compared with that on the corresponding surfaces, but with almost no enhancement of the energy barriers for Li atom diffusion. The enhanced Li adsorption capability at Li2S/G interface contributes to the extra storage capacity of graphene/metal sulfide composites. Furthermore, the synergistic mechanism between metal sulfide and graphene is revealed. Moreover, band structure analysis shows the electronic conductivity is enhanced with the incorporation of graphene. The results corroborate the interfacial pseudocapacity-like Li atom storage mechanism, and are helpful for the design of layered graphene/metal sulfide composites as anode materials for lithium ion batteries.

  14. Interfacial chemical reaction and multiple gap state formation on three layer cathode in organic light-emitting diode: Ca/BaF2/Alq3

    NASA Astrophysics Data System (ADS)

    Kim, Tae Gun; Lee, Hyunbok; Yi, Yeonjin; Lee, Seung Mi; Kim, Jeong Won

    2015-07-01

    A three layer cathode is a promising stack structure for long lifetime and high efficiency in organic light-emitting diodes. The interfacial chemical reactions and their effects on electronic structures for alkaline-earth metal (Ca, Ba)/Alq3 [tris(8-hydroxyquinolinato)aluminum] and Ca/BaF2/Alq3 are investigated using in-situ X-ray and ultraviolet photoelectron spectroscopy, as well as molecular model calculation. The BaF2 interlayer initially prevents direct contact between Alq3 and the reactive Ca metal, but it is dissociated into Ba and CaF2 by the addition of Ca. As the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with the underlying Alq3. This series of chemical reactions takes place irrespective of the BaF2 buffer layer thickness as long as the Ca overlayer thickness is sufficient. The interface reaction between the alkaline-earth metal and Alq3 generates two energetically separated gap states in a sequential manner. This phenomenon is explained by step-by-step charge transfer from the alkaline-earth metal to the lowest unoccupied molecular orbital states of Alq3, forming new occupied states below the Fermi level.

  15. Interfacial chemical reaction and multiple gap state formation on three layer cathode in organic light-emitting diode: Ca/BaF{sub 2}/Alq{sub 3}

    SciTech Connect

    Kim, Tae Gun; Kim, Jeong Won; Lee, Hyunbok; Yi, Yeonjin; Lee, Seung Mi

    2015-07-14

    A three layer cathode is a promising stack structure for long lifetime and high efficiency in organic light-emitting diodes. The interfacial chemical reactions and their effects on electronic structures for alkaline-earth metal (Ca, Ba)/Alq{sub 3} [tris(8-hydroxyquinolinato)aluminum] and Ca/BaF{sub 2}/Alq{sub 3} are investigated using in-situ X-ray and ultraviolet photoelectron spectroscopy, as well as molecular model calculation. The BaF{sub 2} interlayer initially prevents direct contact between Alq{sub 3} and the reactive Ca metal, but it is dissociated into Ba and CaF{sub 2} by the addition of Ca. As the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with the underlying Alq{sub 3}. This series of chemical reactions takes place irrespective of the BaF{sub 2} buffer layer thickness as long as the Ca overlayer thickness is sufficient. The interface reaction between the alkaline-earth metal and Alq{sub 3} generates two energetically separated gap states in a sequential manner. This phenomenon is explained by step-by-step charge transfer from the alkaline-earth metal to the lowest unoccupied molecular orbital states of Alq{sub 3}, forming new occupied states below the Fermi level.

  16. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer

    SciTech Connect

    Mo, Xiaoming; Long, Hao; Wang, Haoning; Chen, Zhao; Wan, Jiawei; Liu, Yuping; Fang, Guojia; Li, Songzhan; Feng, Yamin; Ouyang, Yifang

    2014-08-11

    We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emission at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.

  17. Interfacial reactions between titanium and borate glass

    SciTech Connect

    Brow, R.K.; Saha, S.K.; Goldstein, J.I.

    1992-12-31

    Interfacial reactions between melts of several borate glasses and titanium have been investigated by analytical scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). A thin titanium boride interfacial layer is detected by XPS after short (30 minutes) thermal treatments. ASEM analyses after longer thermal treatments (8--120 hours) reveal boron-rich interfacial layers and boride precipitates in the Ti side of the interface.

  18. Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co50Fe50 magnetic layer and In-Zn-O conductive oxide spacer layer

    NASA Astrophysics Data System (ADS)

    Nakatani, T. M.; Childress, J. R.

    2015-06-01

    We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co50Fe50/IZO/Co50Fe50 trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm2, significantly larger than all-metal structures with Ag or Cu spacers (˜40 mΩ μm2). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5-6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm2, were obtained. The values of ΔRA with the IZO spacers and Co50Fe50 magnetic layers were significantly larger than those with conventional metal spacers and Co50Fe50 magnetic layers (˜1-2 mΩ μm2). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co50Fe50/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.

  19. Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layer

    SciTech Connect

    Trifonov, T.; Marsal, L.F.; Pallares, J.; Rodriguez, A.; Alcubilla, R.

    2004-11-15

    We investigate different aspects of the absolute photonic band gap (PBG) formation in two-dimensional photonic structures consisting of rods covered with a thin dielectric film. Specifically, triangular and honeycomb lattices in both complementary arrangements, i.e., air rods drilled in silicon matrix and silicon rods in air, are studied. We consider that the rods are formed of a dielectric core (silicon or air) surrounded by a cladding layer of silicon dioxide (SiO{sub 2}), silicon nitride (Si{sub 3}N{sub 4}), or germanium (Ge). Such photonic lattices present absolute photonic band gaps, and we study the evolution of these gaps as functions of the cladding material and thickness. Our results show that in the case of air rods in dielectric media the existence of dielectric cladding reduces the absolute gap width and may cause complete closure of the gap if thick layers are considered. For the case of dielectric rods in air, however, the existence of a cladding layer can be advantageous and larger absolute PBG's can be achieved.

  20. Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer.

    PubMed

    Xu, Wei; Ji, Wenyu; Jing, Pengtao; Yuan, Xi; Wang, Y A; Xiang, Weidong; Zhao, Jialong

    2014-02-01

    We have demonstrated an efficient inverted CdSe/CdS/ZnS core/shell quantum-dot light-emitting device (QD-LED) using a solution-processed sol-gel TiO2 and ZnO nanoparticle composite layer as an electron-injection layer with controllable morphology and investigated the electroluminescence mechanism. The introduction of the ZnO layer can lead to the formation of spin-coated uniform QD films and fabrication of high-luminance QD-LEDs. The TiO2 layer improves the balance of charge injection due to its lower electron mobility relative to the ZnO layer. These results offer a practicable platform for the realization of a trade-off between the luminance and efficiency in the inverted QD-LEDs with TiO2/ZnO composites as the electron contact layer. PMID:24487831

  1. Interfacial material for solid oxide fuel cell

    DOEpatents

    Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

    1999-01-01

    Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

  2. Interfacial effects of the Cu2O nano-dots decorated Co3O4 nanorods array and its photocatalytic activity for cleaving organic molecules

    NASA Astrophysics Data System (ADS)

    Qiu, X. P.; Yu, J. S.; Xu, H. M.; Chen, W. X.; Hu, W.; Chen, G. L.

    2016-09-01

    A heterogeneous nanocomposite catalyst constructed by the Co3O4 nanorods decorated with the Cu2O quantum dots (QDs) were successfully synthesized via a simple hydrothermal method followed by an oxidation-reduction processing. The fabricated Cu2O/Co3O4 nanocomposite was characterized by the SEM, TEM, XPS, XRD, UV-vis and PL, and the (2 2 0) and (3 1 1) facets of the Co3O4 were exposed. Compared with the original Co3O4 nanorods with an average diameter of 350 nm, a substantial decrease in the band gap was observed after doping the nanorods with the Cu2O QDs (average diameter of 5 nm). Such a dramatic decrease in the band gap indicated a significant enhancement of the photocatalytic activities under visible light. The methylene blue (MB) dye and the phenol were used as model organic pollutants, and the Cu2O/Co3O4 nanocomposite catalyst exhibited both high catalytic activity and good recycling stability. The catalytic activities of the Cu2O/Co3O4/potassium monopersulfate triple salt (PMS) system for cleaving the MB and the phenol were dependent on the dosages of the Cu2O QDs, and the calculated degradation rates achieved by 7.0 wt% Cu2O/Co3O4 nanocomposite catalyst were about 11.3 and 1.8 times than that of the pristine Co3O4 nanorod catalyst for the MB and the phenol, respectively. The reactive species of rad O2- and the holes were determined to be the main active species for the phenol photocatalytic degradation by the 7 wt% Cu2O/Co3O4/PMS system and the 7 wt% Cu2O/Co3O4/H2O2 system, respectively.

  3. Electric field-induced nonlinearity enhancement in strained semi-spheroid-shaped quantum dots coupled to wetting layer

    SciTech Connect

    Sabaeian, Mohammad Shahzadeh, Mohammadreza; Farbod, Mansoor

    2014-12-15

    In this work, the effects of vertical electric field on the electronic and optical properties of strained semi-spheroid-shaped InAs/GaAs quantum dot (QD) coupled to its wetting layer (WL) aimed to enhance the nonlinear optical properties were investigated. The dependence of energy eigenvalues of S- and P- states and intersubband P-to-S transition energy on applied electric field was studied. A ∼∓10 meV Stark shift in the intersubband P-to-S transition energy was calculated for a semi-spheroid-shaped QD with height of 5 nm and base-length of 20 nm when bias voltage was varied from 0 V to ±0.8V. The dependence of transition dipole moment and linear and nonlinear optical properties of the system on bias voltage was also studied. It was concluded that increasing the bias voltage from -0.8V to +0.8V leads to increase in figure of merit of the system from ∼0.153 to ∼0.198.

  4. Measurements of the ferromagnetic/antiferromagnetic interfacial exchange energy in CO/CoO and Fe/FeF2 layers (invited)

    NASA Astrophysics Data System (ADS)

    Dahlberg, E. Dan; Miller, Brad; Hill, Bradford; Jonsson, B. J.; Strom, Valter; Rao, K. V.; Nogues, Josep; Schuller, Ivan K.

    1998-06-01

    Two measurement techniques, both relying on reversible rotations of the magnetization, have been used to determine the magnitude of the interfacial exchange energy (IEE) between ferromagnetic and antiferromagnetic (F/AF) layers. One technique is to use the anisotropic magnetoresistance to determine rotations of the magnetization away from the unidirectional easy axis, where the rotation is accomplished by applying external magnetic fields less than the effective F/AF exchange field. The second technique uses measurements of the ac susceptibility as a function of the angle between the ac field and the unidirectional exchange field. Both of the reversible process techniques result in values of the IEE larger (by as much as a factor of 10 in Co/CoO bilayers) than the traditional irreversible technique of measuring a shift in the hysteresis loop. The ac susceptibility technique was also used to measure one Fe/FeF2 bilayer. For this sample, the IEE values obtained by reversible and irreversible methods are equivalent.

  5. Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs(001)

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Hsun; Fu, Chien-Hua; Lin, Keng-Yung; Chen, Kuan-Hsiung; Chang, Tsong-Wen; Raynien Kwo, J.; Hong, Minghwei

    2016-08-01

    A low interfacial trap density (D it) of 2.2 × 1011 eV-1 cm-2 has been achieved with an atomic layer deposited (ALD) single crystal Y2O3 epitaxially on n-GaAs(001), along with a small frequency dispersion of 10.3% (2.6%/decade) at the accumulation region in the capacitance-voltage (C-V) curves. The D it and frequency dispersion in the C-V curves in this work are the lowest among all of the reported ALD-oxides on n-type GaAs(001). The D it was measured using the conductance-voltage (G-V) and quasi-static C-V (QSCV) methods. Moreover, the heterostructure was thermally stable with rapid annealing at 900 °C under various durations in He and N2, which has not been achieved in the heterostructures of ALD-Al2O3 or HfO2 on GaAs.

  6. Self-assembled monolayers of C60-triphenylamine dyads as photo-switched interfacial layers for potential application in photovoltaic cells.

    PubMed

    Hosseini, Mahsa; Rivera-Nazario, Danisha M; Echegoyen, Luis A

    2014-03-12

    C60-Triphenylamine dyads were synthesized for incorporation as photoswitched interfacial layers in organic photovoltaic (OPV) cells. Self-assembled monolayers (SAMs) of these dyads on gold (through S-Au and C60-Au interactions) were prepared through one or two adsorption processes, and their packing densities were fully characterized. Analysis using quartz crystal microbalance (QCM) and electrochemical impedance spectroscopy (EIS) measurements indicated that all SAMs exhibit dense coverage on the gold surfaces. Electrochemical desorption in KOH confirmed that the cis-1 dyad is anchored to the gold surface through its thiol group. Impedance measurements in the absence and presence of UV irradiation were performed to observe the photoswitched properties of these surface confined dyads. Upon UV light exposure of the SAMs, the charge-transfer resistance decreased when Fe(CN)6(3-/4-) was used as the probe redox couple and increased with Ru(NH3)6(3+/2+), confirming the generation of positive charges on the surface upon UV irradiation.

  7. Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs(001)

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Hsun; Fu, Chien-Hua; Lin, Keng-Yung; Chen, Kuan-Hsiung; Chang, Tsong-Wen; Raynien Kwo, J.; Hong, Minghwei

    2016-08-01

    A low interfacial trap density (D it) of 2.2 × 1011 eV‑1 cm‑2 has been achieved with an atomic layer deposited (ALD) single crystal Y2O3 epitaxially on n-GaAs(001), along with a small frequency dispersion of 10.3% (2.6%/decade) at the accumulation region in the capacitance–voltage (C–V) curves. The D it and frequency dispersion in the C–V curves in this work are the lowest among all of the reported ALD-oxides on n-type GaAs(001). The D it was measured using the conductance–voltage (G–V) and quasi-static C–V (QSCV) methods. Moreover, the heterostructure was thermally stable with rapid annealing at 900 °C under various durations in He and N2, which has not been achieved in the heterostructures of ALD-Al2O3 or HfO2 on GaAs.

  8. Chemical compatibility issues related to use of copper as an interfacial layer for SiC fiber reinforced Ti3Ai+Nb composite

    NASA Technical Reports Server (NTRS)

    Misra, Ajay K.

    1991-01-01

    The reaction of Cu, a potential interfacial compliant layer for the Ti3Al plus Nb/SiC composite, with SiC, SCS-6 fiber, and the Ti3Al plus Nb matrix was examined at two temperatures: 1223 and 1273 K. Reaction of Cu with SiC resulted in the formation of a CuSi solution and free carbon, the reaction product being molten at 1273 K. Hot pressing the SCS-6 fiber in a Cu matrix at 1273 K resulted in cracking and delamination of the outer carbon-rich coating, thus allowing the Cu to penetrate to the SiC-carbon coating interface and react with SiC. In contrast, no such damage to the outer coating was observed at 1223 K. There was excessive reaction between Cu and the Ti3Al plus Nb matrix, the reaction product being molten both at 1223 and 1273 K. An interlayer of Nb between Cu and Ti3Al plus Nb matrix prevented the reaction between the two.

  9. Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Ostermaier, C.; Pozzovivo, G.; Basnar, B.; Schrenk, W.; Schmid, M.; Tóth, L.; Pécz, B.; Carlin, J.-F.; Gonschorek, M.; Grandjean, N.; Strasser, G.; Pogany, D.; Kuzmik, J.

    2010-06-01

    We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17Al0.83N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between the gate metal and the InAlN layer and revealed diffusion of oxygen into iridium during annealing. Below 700 °C the diffusion is inhomogeneous and seems to occur along grain boundaries, which is consistent with the capacitance-voltage analysis. Annealing at 700 °C increased the gate capacitance over a factor 2, shifted the threshold voltage from +0.3 to +1 V and increased the transconductance from 400 to 640 mS/mm.

  10. Heat-induced transformation of CdSe-CdS-ZnS core-multishell quantum dots by Zn diffusion into inner layers.

    PubMed

    Yalcin, Anil O; Goris, Bart; van Dijk-Moes, Relinde J A; Fan, Zhaochuan; Erdamar, Ahmet K; Tichelaar, Frans D; Vlugt, Thijs J H; Van Tendeloo, Gustaaf; Bals, Sara; Vanmaekelbergh, Daniël; Zandbergen, Henny W; van Huis, Marijn A

    2015-02-25

    In this work, we investigate the thermal evolution of CdSe-CdS-ZnS core-multishell quantum dots (QDs) in situ using transmission electron microscopy (TEM). Starting at a temperature of approximately 250 °C, Zn diffusion into inner layers takes place together with simultaneous evaporation of particularly Cd and S. As a result of this transformation, CdxZn1-xSe-CdyZn1-yS core-shell QDs are obtained.

  11. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

    PubMed Central

    2014-01-01

    The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon. PACS 85.35.Be; 84.60.Jt; 78.67.Bf PMID:24936160

  12. Exchange bias properties of 140 nm-sized dipolarly interacting circular dots with ultrafine IrMn and NiFe layers

    NASA Astrophysics Data System (ADS)

    Spizzo, F.; Tamisari, M.; Chinni, F.; Bonfiglioli, E.; Gerardino, A.; Barucca, G.; Bisero, D.; Fin, S.; Del Bianco, L.

    2016-02-01

    We studied the exchange bias effect in an array of IrMn(3 nm)/NiFe(3 nm) circular dots (size ~140 nm and center-to-center distance ~200 nm, as revealed by microscopy analyses), prepared on a large area (3×3 mm2) by electron beam lithography and lift-off, using dc sputtering deposition. Hysteresis loops were measured by SQUID magnetometer at increasing values of temperature T (in the 5-300 K range) after cooling from 300 K down to 5 K in zero field (ZFC mode) and in a saturating magnetic field (FC mode). The exchange bias effect disappears above T~200 K and, at each temperature, the exchange field HEX measured in ZFC is substantially lower than the FC one. Micromagnetic calculations indicate that, at room temperature, each dot is in high-remanence ground state, but magnetic dipolar interactions establish a low-remanence configuration of the array as a whole. Hence, at low temperature, following the ZFC procedure, the exchange anisotropy in the dot array is averaged out, tending to zero. However, even the FC values of HEX and of the coercivity HC are definitely smaller compared to those measured in a reference continuous film with the same stack configuration (at T=5 K, HEX~90 Oe and HC~180 Oe in the dots and HEX~1270 Oe and HC~860 Oe in the film). Our explanation is based on the proven glassy magnetic nature of the ultrathin IrMn layer, implying the existence of magnetic correlations among the spins, culminating in a collective freezing below T~100 K. We propose, also by the light of micromagnetic simulations, that the small dot size imposes a spatial constraint on the magnetic correlation length among the IrMn spins so that, even at the lowest temperature, their thermal stability, especially at the dot border, is compromised.

  13. CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions.

    PubMed

    Robin, I C; Aichele, T; Bougerol, C; André, R; Tatarenko, S; Bellet-Amalric, E; Van Daele, B; Van Tendeloo, G

    2007-07-01

    CdSe/ZnSe quantum dot formation is investigated by studying different steps of the growth. To precisely control the critical thickness of CdSe grown on a ZnSe buffer layer, the CdSe self-regulated growth rate in atomic layer epitaxy growth mode is determined by reflection high-energy electron diffraction (RHEED) measurements for a temperature range between 180 and 280 °C. Then, the two-dimensional-three-dimensional (2D-3D) transition of a strained CdSe layer on (001)-ZnSe induced by the use of amorphous selenium is studied. The formation of CdSe islands is found when 3 monolayers (ML) of CdSe are deposited. When only 2.5 ML of CdSe are deposited, another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. We also studied the evolution of the surface morphology when 2.7 ML are deposited, to study the boundary between those two phenomena. The influence of capping on quantum dot morphology is investigated. It is found that cadmium is redistributed within the layer during capping. Our results show that the cadmium distribution after capping depends on the capping temperature and on the strain of the CdSe layer. Cadmium incorporation after capping is also studied. It is found that the amount of incorporated cadmium depends on the strain of the CdSe layer before capping.

  14. Bio-sensing based on plasmon-coupling caused by rotated sub-micrometer gratings in metal-dielectric interfacial layers

    NASA Astrophysics Data System (ADS)

    Csete, M.; Sipos, Á.; Szalai, A.; Mathesz, A.; Deli, M. A.; Veszelka, Sz.; Schmatulla, A.; Kőházi-Kis, A.; Osvay, K.; Marti, O.; Bor, Zs.

    2007-09-01

    Novel plasmonic sensor chips are prepared by generating sub-micrometer periodic patterns in the interfacial layers of bimetal-polymer films via master-grating based interference method. Poly-carbonate films spin-coated onto vacuum evaporated silver-gold bimetallic layers are irradiated by the two interfering UV beams of a Nd:YAG laser. It is proven by pulsed force mode AFM that periodic adhesion pattern corresponds to the surface relief gratings, consisting of sub-micrometer droplet arrays and continuous polymer stripes, induced by p- and s-polarized beams, respectively. The characteristic periods are the same, but more complex and larger amplitude adhesion modulation is detectable on the droplet arrays. The polar and azimuthal angle dependence of the resonance characteristic of plasmons is studied by combining the prism- and grating-coupling methods in a modified Kretschmann arrangement, illuminating the structured metal-polymer interface by a frequency doubled Nd:YAG laser through a semi-cylinder. It is proven that the grating-coupling results in double-peaked plasmon resonance curves on both of the droplet arrays and line gratings, when the grooves are rotated to an appropriate azimuthal angle, and the modulation amplitude of the structure is sufficiently large. Streptavidin seeding is performed to demonstrate that small amount of protein can be detected monitoring the shift of the secondary resonance minima. The available high concentration sensitivity is explained by the promotion of protein adherence in the structure's valleys due to the enhanced adhesion. The line-shaped polymer gratings resulting in narrow resonance peaks are utilized to demonstrate the effect of therapeutic molecules on Amyloid-Β peptide, a pathogenic factor in Alzheimer disease.

  15. Gas-solid interfacial modification of oxygen activity in layered oxide cathodes for lithium-ion batteries.

    PubMed

    Qiu, Bao; Zhang, Minghao; Wu, Lijun; Wang, Jun; Xia, Yonggao; Qian, Danna; Liu, Haodong; Hy, Sunny; Chen, Yan; An, Ke; Zhu, Yimei; Liu, Zhaoping; Meng, Ying Shirley

    2016-01-01

    Lattice oxygen can play an intriguing role in electrochemical processes, not only maintaining structural stability, but also influencing electron and ion transport properties in high-capacity oxide cathode materials for Li-ion batteries. Here, we report the design of a gas-solid interface reaction to achieve delicate control of oxygen activity through uniformly creating oxygen vacancies without affecting structural integrity of Li-rich layered oxides. Theoretical calculations and experimental characterizations demonstrate that oxygen vacancies provide a favourable ionic diffusion environment in the bulk and significantly suppress gas release from the surface. The target material is achievable in delivering a discharge capacity as high as 301 mAh g(-1) with initial Coulombic efficiency of 93.2%. After 100 cycles, a reversible capacity of 300 mAh g(-1) still remains without any obvious decay in voltage. This study sheds light on the comprehensive design and control of oxygen activity in transition-metal-oxide systems for next-generation Li-ion batteries. PMID:27363944

  16. Influence of Metal Contacts on Graphene Transport Characteristics and Its Removal with Nano-carbon Interfacial Layer

    NASA Astrophysics Data System (ADS)

    Kanda, Akinobu; Ito, Yu; Katakura, Kenta; Sonoda, Hiroki; Higuchi, Shoma; Tomori, Hikari; Ootuka, Youiti

    Graphene is a promising candidate for the next-generation electronic material. While considerable effort has been devoted to achieve higher mobility in graphene films, relatively little attention has been paid to the effect of metal contacts, which are indispensable to the electric devices. At a graphene/metal interface, mainly due to the difference in work functions, carriers are injected from the metal to graphene. The resulting shift of local Dirac point is not limited at the graphene/metal interface but extends into the graphene channel. This carrier doping affects more significantly the performance of graphene field effect devices with shorter channel, as well as may conceal Dirac physics at the graphene/metal interface. Here, we experimentally investigate the channel length dependence of graphene transport properties in a wide gate-voltage range and extract the effect of metal contact. Several metal species are investigated. We reveal the origin of electron-hole asymmetry and the effect of the chemical interaction between graphene and metal, and derive the effective work function of graphene (4.93 eV). Furthermore, we succeed in reducing the influence of metal contact by inserting a thin nano-carbon layer (amorphous carbon or multilayer graphene (MLG)) at the interface.

  17. Gas-solid interfacial modification of oxygen activity in layered oxide cathodes for lithium-ion batteries

    DOE PAGES

    Qiu, Bao; Zhang, Minghao; Wu, Lijun; Wang, Jun; Xia, Yonggao; Qian, Danna; Liu, Haodong; Chen, Yan; An, Ke; Zhu, Yimei; et al

    2016-07-01

    Lattice oxygen can play an intriguing role in electrochemical processes, not only maintaining structural stability, but also influencing electron and ion transport properties in high-capacity oxide cathode materials for Li-ion batteries. Here, we report the design of a gas–solid interface reaction to achieve delicate control of oxygen activity through uniformly creating oxygen vacancies without affecting structural integrity of Li-rich layered oxides. Theoretical calculations and experimental characterizations demonstrate that oxygen vacancies provide a favourable ionic diffusion environment in the bulk and significantly suppress gas release from the surface. The target material is achievable in delivering a discharge capacity as high asmore » 301 mAh g–1 with initial Coulombic efficiency of 93.2%. After 100 cycles, a reversible capacity of 300 mAh g–1 still remains without any obvious decay in voltage. Lastly, this study sheds light on the comprehensive design and control of oxygen activity in transition-metal-oxide systems for next-generation Li-ion batteries.« less

  18. Gas-solid interfacial modification of oxygen activity in layered oxide cathodes for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Qiu, Bao; Zhang, Minghao; Wu, Lijun; Wang, Jun; Xia, Yonggao; Qian, Danna; Liu, Haodong; Hy, Sunny; Chen, Yan; An, Ke; Zhu, Yimei; Liu, Zhaoping; Meng, Ying Shirley

    2016-07-01

    Lattice oxygen can play an intriguing role in electrochemical processes, not only maintaining structural stability, but also influencing electron and ion transport properties in high-capacity oxide cathode materials for Li-ion batteries. Here, we report the design of a gas-solid interface reaction to achieve delicate control of oxygen activity through uniformly creating oxygen vacancies without affecting structural integrity of Li-rich layered oxides. Theoretical calculations and experimental characterizations demonstrate that oxygen vacancies provide a favourable ionic diffusion environment in the bulk and significantly suppress gas release from the surface. The target material is achievable in delivering a discharge capacity as high as 301 mAh g-1 with initial Coulombic efficiency of 93.2%. After 100 cycles, a reversible capacity of 300 mAh g-1 still remains without any obvious decay in voltage. This study sheds light on the comprehensive design and control of oxygen activity in transition-metal-oxide systems for next-generation Li-ion batteries.

  19. Gas-solid interfacial modification of oxygen activity in layered oxide cathodes for lithium-ion batteries.

    PubMed

    Qiu, Bao; Zhang, Minghao; Wu, Lijun; Wang, Jun; Xia, Yonggao; Qian, Danna; Liu, Haodong; Hy, Sunny; Chen, Yan; An, Ke; Zhu, Yimei; Liu, Zhaoping; Meng, Ying Shirley

    2016-01-01

    Lattice oxygen can play an intriguing role in electrochemical processes, not only maintaining structural stability, but also influencing electron and ion transport properties in high-capacity oxide cathode materials for Li-ion batteries. Here, we report the design of a gas-solid interface reaction to achieve delicate control of oxygen activity through uniformly creating oxygen vacancies without affecting structural integrity of Li-rich layered oxides. Theoretical calculations and experimental characterizations demonstrate that oxygen vacancies provide a favourable ionic diffusion environment in the bulk and significantly suppress gas release from the surface. The target material is achievable in delivering a discharge capacity as high as 301 mAh g(-1) with initial Coulombic efficiency of 93.2%. After 100 cycles, a reversible capacity of 300 mAh g(-1) still remains without any obvious decay in voltage. This study sheds light on the comprehensive design and control of oxygen activity in transition-metal-oxide systems for next-generation Li-ion batteries.

  20. Gas–solid interfacial modification of oxygen activity in layered oxide cathodes for lithium-ion batteries

    PubMed Central

    Qiu, Bao; Zhang, Minghao; Wu, Lijun; Wang, Jun; Xia, Yonggao; Qian, Danna; Liu, Haodong; Hy, Sunny; Chen, Yan; An, Ke; Zhu, Yimei; Liu, Zhaoping; Meng, Ying Shirley

    2016-01-01

    Lattice oxygen can play an intriguing role in electrochemical processes, not only maintaining structural stability, but also influencing electron and ion transport properties in high-capacity oxide cathode materials for Li-ion batteries. Here, we report the design of a gas–solid interface reaction to achieve delicate control of oxygen activity through uniformly creating oxygen vacancies without affecting structural integrity of Li-rich layered oxides. Theoretical calculations and experimental characterizations demonstrate that oxygen vacancies provide a favourable ionic diffusion environment in the bulk and significantly suppress gas release from the surface. The target material is achievable in delivering a discharge capacity as high as 301 mAh g−1 with initial Coulombic efficiency of 93.2%. After 100 cycles, a reversible capacity of 300 mAh g−1 still remains without any obvious decay in voltage. This study sheds light on the comprehensive design and control of oxygen activity in transition-metal-oxide systems for next-generation Li-ion batteries. PMID:27363944

  1. Exact Solution to Stationary Onset of Convection Due to Surface Tension Variation in a Multicomponent Fluid Layer With Interfacial Deformation

    NASA Technical Reports Server (NTRS)

    Skarda, J. Raymond Lee; McCaughan, Frances E.

    1998-01-01

    Stationary onset of convection due to surface tension variation in an unbounded multicomponent fluid layer is considered. Surface deformation is included and general flux boundary conditions are imposed on the stratifying agencies (temperature/composition) disturbance equations. Exact solutions are obtained to the general N-component problem for both finite and infinitesimal wavenumbers. Long wavelength instability may coexist with a finite wavelength instability for certain sets of parameter values, often referred to as frontier points. For an impermeable/insulated upper boundary and a permeable/conductive lower boundary, frontier boundaries are computed in the space of Bond number, Bo, versus Crispation number, Cr, over the range 5 x 10(exp -7) less than or equal to Bo less than or equal to 1. The loci of frontier points in (Bo, Cr) space for different values of N, diffusivity ratios, and, Marangoni numbers, collapsed to a single curve in (Bo, D(dimensional variable)Cr) space, where D(dimensional variable) is a Marangoni number weighted diffusivity ratio.

  2. Effect of high-pressure H{sub 2}O treatment on elimination of interfacial GeO{sub X} layer between ZrO{sub 2} and Ge stack

    SciTech Connect

    Huang, Chen-Shuo; Liu, Po-Tsun

    2011-08-22

    This investigation demonstrates the effect of high-pressure H{sub 2}O treatment on the elimination of the interfacial germanium suboxide (GeO{sub X}) layer between ZrO{sub 2} and Ge. The formation of GeO{sub X} interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H{sub 2}O treatment eliminates the interfacial GeO{sub X} layer. The physical mechanism involves the oxidation of non-oxidized Zr with H{sub 2}O and the reduction of GeO{sub X} by H{sub 2}. Treatment with H{sub 2}O reduces the gate-leakage current of a ZrO{sub 2}/Ge capacitor by a factor of 1000.

  3. A Resonance-Shifting Hybrid n-Type Layer for Boosting Near-Infrared Response in Highly Efficient Colloidal Quantum Dots Solar Cells.

    PubMed

    Baek, Se-Woong; Song, Jung Hoon; Choi, Woong; Song, Hyunjoon; Jeong, Sohee; Lee, Jung-Yong

    2015-12-22

    A new configuration of a plasmonic quantum dots solar structure is proposed. Gold-silver core-shell metal nanoparticles (Au@Ag NCs) are incorporated into the TiO2 layer (Au@Ag NCs-HL) of PbS-based solar cells. The TiO2 layer enables the Au@Ag NCs to have broad plasmonic responses and the external quantum efficiency and absorption of the plasmonic devices are significantly enhanced. The electrical performance of the solar cells is also improved. PMID:26523933

  4. Use of Surface Photovoltage Spectroscopy to Measure Built-in Voltage, Space Charge Layer Width, and Effective Band Gap in CdSe Quantum Dot Films.

    PubMed

    Zhao, Jing; Nail, Benjamin A; Holmes, Michael A; Osterloh, Frank E

    2016-09-01

    Surface photovoltage spectroscopy (SPS) was used to study the photochemistry of mercaptoethanol-ligated CdSe quantum dot (2.0-4.2 nm diameter) films on indium doped tin oxide (ITO) in the absence of an external bias or electrolyte. The n-type films generate negative voltages under super band gap illumination (0.1-0.5 mW cm(-2)) by majority carrier injection into the ITO substrate. The photovoltage onset energies track the optical band gaps of the samples and are assigned as effective band gaps of the films. The photovoltage values (-125 to -750 mV) vary with quantum dot sizes and are modulated by the built-in potential of the CdSe-ITO Schottky type contacts. Deviations from the ideal Schottky model are attributed to Fermi level pinning in states approximately 1.1 V negative of the ITO conduction band edge. Positive photovoltage signals of +80 to +125 mV in films of >4.0 nm nanocrystals and in thin (70 nm) nanocrystal films are attributed to electron-hole (polaron) pairs that are polarized by a space charge layer at the CdSe-ITO boundary. The space charge layer is 70-150 nm wide, based on thickness-dependent photovoltage measurements. The ability of SPS to directly measure built-in voltages, space charge layer thickness, sub-band gap states, and effective band gaps in drop-cast quantum dot films aids the understanding of photochemical charge transport in quantum dot solar cells. PMID:27505130

  5. Use of Surface Photovoltage Spectroscopy to Measure Built-in Voltage, Space Charge Layer Width, and Effective Band Gap in CdSe Quantum Dot Films.

    PubMed

    Zhao, Jing; Nail, Benjamin A; Holmes, Michael A; Osterloh, Frank E

    2016-09-01

    Surface photovoltage spectroscopy (SPS) was used to study the photochemistry of mercaptoethanol-ligated CdSe quantum dot (2.0-4.2 nm diameter) films on indium doped tin oxide (ITO) in the absence of an external bias or electrolyte. The n-type films generate negative voltages under super band gap illumination (0.1-0.5 mW cm(-2)) by majority carrier injection into the ITO substrate. The photovoltage onset energies track the optical band gaps of the samples and are assigned as effective band gaps of the films. The photovoltage values (-125 to -750 mV) vary with quantum dot sizes and are modulated by the built-in potential of the CdSe-ITO Schottky type contacts. Deviations from the ideal Schottky model are attributed to Fermi level pinning in states approximately 1.1 V negative of the ITO conduction band edge. Positive photovoltage signals of +80 to +125 mV in films of >4.0 nm nanocrystals and in thin (70 nm) nanocrystal films are attributed to electron-hole (polaron) pairs that are polarized by a space charge layer at the CdSe-ITO boundary. The space charge layer is 70-150 nm wide, based on thickness-dependent photovoltage measurements. The ability of SPS to directly measure built-in voltages, space charge layer thickness, sub-band gap states, and effective band gaps in drop-cast quantum dot films aids the understanding of photochemical charge transport in quantum dot solar cells.

  6. Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co{sub 50}Fe{sub 50} magnetic layer and In-Zn-O conductive oxide spacer layer

    SciTech Connect

    Nakatani, T. M. Childress, J. R.

    2015-06-28

    We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co{sub 50}Fe{sub 50}/IZO/Co{sub 50}Fe{sub 50} trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm{sup 2}, significantly larger than all-metal structures with Ag or Cu spacers (∼40 mΩ μm{sup 2}). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5–6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm{sup 2}, were obtained. The values of ΔRA with the IZO spacers and Co{sub 50}Fe{sub 50} magnetic layers were significantly larger than those with conventional metal spacers and Co{sub 50}Fe{sub 50} magnetic layers (∼1–2 mΩ μm{sup 2}). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co{sub 50}Fe{sub 50}/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.

  7. Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

    SciTech Connect

    Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Chen, Kevin J.; Wang, Maojun; Shen, Bo

    2015-02-02

    We report the interface characterization of Al{sub 2}O{sub 3}/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al{sub 2}O{sub 3}/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D{sub it} in MOS structures, D{sub it} in the device with AlN was determined to be in the range of 10{sup 11}–10{sup 12 }eV{sup −1 }cm{sup −2}, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well.

  8. Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

    NASA Astrophysics Data System (ADS)

    Maksudur Rahman, Mohammad; Higo, Akio; Sekhar, Halubai; Erman Syazwan, Mohd; Hoshi, Yusuke; Usami, Noritaka; Samukawa, Seiji

    2016-03-01

    The effect of passivation films on a Si quantum dot superlattice (QDSL) was investigated to generate high photocurrent in solar-cell applications. Three types of passivation films, sputter-grown amorphous silicon carbide (a-SiC), hydrogenated a-SiC (a-SiC:H), and atomic-layer-deposited aluminum oxide (ALD-Al2O3), were used to passivate the Si QDSLs containing a stack of four 4 nm Si nanodisks (NDs) and 2 nm silicon carbide (SiC) films fabricated by neutral beam etching (NBE). Because of the high surface-to-volume ratio typically present in quantum Si-NDs formed in the top-down NBE process, there is a tendency to form larger surface dangling bonds on untreated Si-ND surfaces as well as to have short distance (<10 nm) between high-aspect-ratio nanopillars of stacked 4 nm Si-NDs/2 nm SiC films, which conventionally sputter SiC films cannot uniformly cover. Therefore, we optimized the passivation techniques with an ALD-Al2O3 film. Scanning electron microscopy (SEM) analysis helped to explain the surface morphology before and after the passivation of the QDSLs. After the completion of the passivation process, the quality of the top surface films of the QDSLs was analyzed from the surface roughness by atomic force microscopy (AFM) analysis, which revealed that ALD-Al2O3 passivated films had the smallest roughness (RMS) of 1.09 nm with respect to sputter-grown a-SiC (RMS: 1.75 nm) and a-SiC:H (RMS: 1.54 nm) films. Conductive atomic force microscopy (CAFM) revealed that ALD-Al2O3 passivation decreased the surface-leakage current as a result of proper passivation of side-wall surface defects in the QDSLs. The carrier transport characteristics were extracted from the QDSLs using the photovoltaic (PV) properties of p++/i/n+ solar cells, where the QDSLs consisted of different passivation layers acting as intermediate layers (i-layers) between the high-doping-density p++ Si (1 × 1020 cm-3) and n+ Si (1 × 1019 cm-3) substrates. High-doping-density p++ Si acted as a hole

  9. Highly Enhanced Photoelectrochemical Water Oxidation Efficiency Based on Triadic Quantum Dot/Layered Double Hydroxide/BiVO4 Photoanodes.

    PubMed

    Tang, Yanqun; Wang, Ruirui; Yang, Ye; Yan, Dongpeng; Xiang, Xu

    2016-08-01

    The water oxidation half-reaction is considered to be a bottleneck for achieving highly efficient solar-driven water splitting due to its multiproton-coupled four-electron process and sluggish kinetics. Herein, a triadic photoanode consisting of dual-sized CdTe quantum dots (QDs), Co-based layered double hydroxide (LDH) nanosheets, and BiVO4 particles, that is, QD@LDH@BiVO4, was designed. Two sets of consecutive Type-II band alignments were constructed to improve photogenerated electron-hole separation in the triadic structure. The efficient charge separation resulted in a 2-fold enhancement of the photocurrent of the QD@LDH@BiVO4 photoanode. A significantly enhanced oxidation efficiency reaching above 90% in the low bias region (i.e., E < 0.8 V vs RHE) could be critical in determining the overall performance of a complete photoelectrochemical cell. The faradaic efficiency for water oxidation was almost 90%. The conduction band energy of QDs is ∼1.0 V more negative than that of LDH, favorable for the electron injection to LDH and enabling a more efficient hole separation. The enhanced photon-to-current conversion efficiency and improved water oxidation efficiency of the triadic structure may result from the non-negligible contribution of hot electrons or holes generated in QDs. Such a band-matching and multidimensional triadic architecture could be a promising strategy for achieving high-efficiency photoanodes by sufficiently utilizing and maximizing the functionalities of QDs. PMID:27419597

  10. Improved conversion efficiency of Ag2S quantum dot-sensitized solar cells based on TiO2 nanotubes with a ZnO recombination barrier layer

    PubMed Central

    2011-01-01

    We improve the conversion efficiency of Ag2S quantum dot (QD)-sensitized TiO2 nanotube-array electrodes by chemically depositing ZnO recombination barrier layer on plain TiO2 nanotube-array electrodes. The optical properties, structural properties, compositional analysis, and photoelectrochemistry properties of prepared electrodes have been investigated. It is found that for the prepared electrodes, with increasing the cycles of Ag2S deposition, the photocurrent density and the conversion efficiency increase. In addition, as compared to the Ag2S QD-sensitized TiO2 nanotube-array electrode without the ZnO layers, the conversion efficiency of the electrode with the ZnO layers increases significantly due to the formation of efficient recombination layer between the TiO2 nanotube array and electrolyte. PMID:21777458

  11. Understanding the interfacial phenomena of a 4.7 V and 55 °C Li-ion battery with Li-rich layered oxide cathode and grap2hite anode and its correlation to high-energy cycling performance

    NASA Astrophysics Data System (ADS)

    Pham, Hieu Quang; Hwang, Eui-Hyung; Kwon, Young-Gil; Song, Seung-Wan

    2016-08-01

    Research progress of high-energy performance and interfacial phenomena of Li1.13Mn0.463Ni0.203Co0.203O2 cathode and graphite anode in a 55 °C full-cell under an aggressive charge cut-off voltage to 4.7 V (4.75 V vs. Li/Li+) is reported. Although anodic instability of conventional electrolyte is the critical issue on high-voltage and high-temperature cell operation, interfacial phenomena and the solution to performance improvement have not been reported. Surface spectroscopic evidence revealed that structural degradation of both cathode and anode materials, instability of surface film at cathode, and metal-dissolution from cathode and -deposition at anode, and a rise of interfacial resistance with high-voltage cycling in 55 °C conventional electrolyte are resolved by the formation of a stable surface film with organic/inorganic mixtures at cathode and solid electrolyte interphase (SEI) at anode using blended additives of fluorinated linear carbonate and vinylene carbonate. As a result, significantly improved cycling stability of 77% capacity retention delivering 227-174 mAhg-1 after 50 cycles is obtained, corresponding to 819-609 Wh per kg of cathode active material. Interfacial stabilization approach would pave the way of controlling the performance and safety, and widening the practical application of Li-rich layered oxide cathode materials and high-voltage electrolyte materials in various high-energy density Li-ion batteries.

  12. Impact of Copper-Doped Titanium Dioxide Interfacial Layers on the Interface-State and Electrical Properties of Si-based MOS Devices

    NASA Astrophysics Data System (ADS)

    Akin, Seçkİn; Sönmezoğlu, Savaş

    2015-09-01

    The current study presents the interface-state and electrical properties of silicon (Si)-based metal-oxide-semiconductor (MOS) devices using copper-doped titanium dioxide (Cu:TiO2) nanoparticles for possible applications as an interfacial layer in scaled high-k/metal gate MOSFET technology. The structural properties of the Cu:TiO2 nanoparticles have been obtained by means of X-ray diffraction (XRD), UV-Vis-NIR spectrometry, atomic force microscopy, and scanning electron microscopy measurements; they were compared with pure TiO2 thin film. With the incorporation of Cu, rutile-dominated anatase/rutile multiphase crystalline was revealed by XRD analysis. To understand the nature of this structure, the electronic parameters controlling the device performance were calculated using current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The ideality factor ( n) was 1.21 for the Al/Cu:TiO2/ p-Si MOS device, while the barrier height ϕ b was 0.75 eV with semi-log I- V characteristics. This is in good agreement with 0.78 eV measured by the Norde model. Possible reasons for the deviation of the ideality factor from unity have been addressed. From the C- V measurements, the values of diffusion potential, barrier height, and carrier concentration were extracted as 0.67, 0.98 eV, and 8.73 × 1013 cm-3, respectively. Our results encourage further work to develop process steps that would allow the Cu-doped TiO2 film/Si interface to play a major role in microelectronic applications.

  13. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    NASA Astrophysics Data System (ADS)

    Ramírez-Porras, A.; García, O.; Vargas, C.; Corrales, A.; Solís, J. D.

    2015-08-01

    Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.

  14. Air-stable short-wave infrared PbS colloidal quantum dot photoconductors passivated with Al{sub 2}O{sub 3} atomic layer deposition

    SciTech Connect

    Hu, Chen; Gassenq, Alban; Chen, Hongtao; Roelkens, Günther; Justo, Yolanda; Hens, Zeger; Devloo-Casier, Kilian; Detavernier, Christophe

    2014-10-27

    A PbS colloidal quantum dot photoconductor with Al{sub 2}O{sub 3} atomic layer deposition (ALD) passivation for air-stable operation is presented. Two different types of inorganic ligands for the quantum dots, S{sup 2−} and OH{sup −}, are investigated. PbS/S{sup 2−} photoconductors with a cut-off wavelength up to 2.4 μm are obtained, and a responsivity up to 50 A/W at 1550 nm is reported. The corresponding specific detectivity is ∼3.4 × 10{sup 8} Jones at 230 K. The 3-dB bandwidth of the PbS/S{sup 2−} and PbS/OH{sup −} photodetectors is 40 Hz and 11 Hz, respectively.

  15. Intercalation of aliphatic amines into the layered structure of vanadyl(IV) hydrogen phosphate hemihydrate (VOHPO[sub 4][center dot]0. 5H[sub 2]O)

    SciTech Connect

    Guliants, V.V.; Benziger, J.B.; Sundaresan, S. )

    1994-04-01

    The vanadyl(IV) hydrogen phosphate hemihydrate, VOHPO[sub 4][center dot]0.5H[sub 2]O, is a pyrolytic precursor of the vanadyl(IV) pyrophosphate phase, (VO)[sub 2]P[sub 2]O[sub 7], generally believed to be the active phase in the selective oxidation of n-butane into maleic anhydride. Pyrolytic transformation into the pyrophosphate phase occurs with conservation of a morphology of the material. VOHPO[sub 4][center dot]0.5H[sub 2]O is a layered hydrogen phosphate, where -POH groups form interlayer hydrogen bonds with the water molecules shared by two face-linked vanadyl octahedra. The structure of the hemihydrate is similar to that of [alpha]-zirconium hydrogen phosphate ([alpha]-ZrP), where hydrogen bonds are within the same layer and -POH groups are also pointed into the interlayer space. In contrast to [alpha]-ZrP, where extensive data exist, intercalation chemistry of the layered vanadyl(IV) hydrogen phosphate hemihydrate at present is a terra incognita. This paper reports the results of the first systematic study of VOHPO[sub 4][center dot]0.5H[sub 2]O intercalation with aliphatic amines as a new route to novel vanadyl(IV) phosphate phases. N-Alkylamines have been commonly known as excellent intercalation agents for testing the intracrystalline reactivity of layered oxides. Intercalated alkylamines may also facilitate introduction of thermostable guest molecules, or [open quotes]pillars[close quotes], by ion exchange producing microporous materials which can modify catalytic and sorptive properties. 9 refs., 6 figs., 2 tabs.

  16. Investigation of the energy spectra and the electron-hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

    NASA Astrophysics Data System (ADS)

    Gorshkov, Alexey P.; Volkova, Natalia S.; Istomin, Leonid A.; Zdoroveishev, Anton V.; Levichev, Sergey

    2016-08-01

    The effects of indium composition and the thickness of the combined InGaAs/GaAs thin cap layer on the energy spectra and relative electron-hole alignment of InAs quantum dots (QDs) grown by metal organic vapor phase epitaxy (MOVPE) are investigated by photoelectrical spectroscopy in a semiconductor/electrolyte system. In structures with InAs QDs and an InGaAs strain reducing layer, the shift of the hole's wave function to the QDs' top was revealed, which indicates In enrichment of the area near the top of QD'. In structures with an ultrathin GaAs cap layer a change of the sign of the built-in dipole moment was observed. This is explained by coupling effects of quantum-confined electrons with surface states.

  17. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  18. Lifetime-applied stress response in air of a SiC-based Nicalon-fiber-reinforced composite with a carbon interfacial layer: Effects of temperature (300 to 1150 C)

    SciTech Connect

    Becher, P.F.; Lin, Hua-Tay; More, K.L.

    1998-07-01

    The lifetimes in air as a function of applied flexure stress and temperature (300--1,150 C) are described for a Si-O-C based (Nicalon) fiber plain-weave cloth reinforced SiC-matrix composite ({approximately}7% closed porosity) with an {approximately}0.3 {micro}m thick carbon interfacial layer. The measured lifetimes of both samples with and without an external SiC seal coating were similar and decreased with applied flexural stress (for stresses greater than {approximately}90 MPa) and with temperature. At temperatures of {ge}600 C, the external CVD SiC coating had negligible effect on the lifetimes; however, at 425 C, a detectable improvement in the lifetime was observed with an external SiC coating. When the applied stress was decreased below an apparent threshold stress (e.g., {approximately}90 MPa) for tests conducted at temperatures {le}950 C, no failures were observed for times of {ge}1,000 H. Electron microscopy observations show that the interfacial carbon layer is progressively removed during tests at 425 and 600 C. In these cases, failure is associated with fiber failure and pull-out. At 950 and 1,150 C, the carbon interface layer is eliminated and replaced by a thick silica layer due to the oxidation of the Nicalon fiber and the SiC matrix. This results in embrittling the composite.

  19. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks

    NASA Astrophysics Data System (ADS)

    Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C.

    2016-09-01

    Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films (<7 nm) on ˜1 nm ALD Al2O3 passivated Ge and Si substrates for applications in higher-k dielectric metal oxide semiconductor field effect transistors below 10 nm technology node. By applying synchrotron grazing incidence x-ray d-spacing maps, x-ray photoelectron spectroscopy (XPS), and angle-resolved XPS, we have identified a monoclinic to tetragonal phase transition with increasing ZrO2 content, elucidated the role of the Ge vs Si substrates in complete tetragonal phase formation (CTPF), and determined the interfacial characteristics of these technologically relevant films. The ZrO2 concentration required for CTPF is lower on Ge than on Si substrates (x ˜ 0.5 vs. x ˜ 0.86), which we attribute as arising from the growth of an ultra-thin layer of metal germanates between the Hf1-xZrxO2 and Al2O3/Ge, possibly during the first deposition and annealing cycle. Due to Ge-induced tetragonal phase stabilization, the interfacial metal germanates could act as a template for the subsequent preferential growth of the tetragonal Hf1-xZrxO2 phase following bottom-up crystallization during the DADA ALD process. We surmise that the interfacial metal germanate layer also function as a diffusion barrier limiting excessive Ge uptake into the dielectric film. An ALD Al2O3 passivation layer of thickness ≥1.5 nm is required to minimize Ge diffusion for developing highly conformal and textured HfO2 based higher-k dielectrics on Ge substrates using the DADA ALD process.

  20. Charged Surfaces and Interfacial Ions.

    PubMed

    Kallay; Zalac

    2000-10-01

    Interfacial charge in a solid/liquid system is due to interactions of ions with surface sites affected by the electrostatic potential that is a consequence of their accumulation. The present theoretical approach is based on the so-called Surface Complexation Model that has several modifications known as either the 1-pK, the 2-pK, or the "MUSIC" model. These models assume different surface reactions and their equilibrium constants, taking into account electrostatic interactions. For that purpose the relationships between potentials affecting the state of interfacial ions and their surface densities need to be known, so that a certain model of the electrical interfacial layer should be introduced. The complexity of the problem results in the use of a variety of different theoretical approaches that cannot be distinguished experimentally. This article discusses several aspects of the problem, such as counterion association, structure of the electrical interfacial layer, potential-charge relationships, surface potentials, the zero charge condition, enthalpy of surface reactions, and the influence of the interfacial ionic equilibrium on the colloid stability. Copyright 2000 Academic Press. PMID:10998282

  1. Tunable Interfacial Thermal Conductance by Molecular Dynamics

    NASA Astrophysics Data System (ADS)

    Shen, Meng

    We study the mechanism of tunable heat transfer through interfaces between solids using a combination of non-equilibrium molecular dynamics simulation (NEMD), vibrational mode analysis and wave packet simulation. We investigate how heat transfer through interfaces is affected by factors including pressure, interfacial modulus, contact area and interfacial layer thickness, with an overreaching goal of developing fundamental knowledge that will allow one to tailor thermal properties of interfacial materials. The role of pressure and interfacial stiffness is unraveled by our studies on an epitaxial interface between two Lennard-Jones (LJ) crystals. The interfacial stiffness is varied by two different methods: (i) indirectly by applying pressure which due to anharmonic nature of bonding, increases interfacial stiffness, and (ii) directly by changing the interfacial bonding strength by varying the depth of the potential well of the LJ potential. When the interfacial bonding strength is low, quantitatively similar behavior to pressure tuning is observed when the interfacial thermal conductance is increased by directly varying the potential-well depth parameter of the LJ potential. By contrast, when the interfacial bonding strength is high, thermal conductance is almost pressure independent, and even slightly decreases with increasing pressure. This decrease can be explained by the change in overlap between the vibrational densities of states of the two crystalline materials. The role of contact area is studied by modeling structures comprised of Van der Waals junctions between single-walled nanotubes (SWCNT). Interfacial thermal conductance between SWCNTs is obtained from NEMD simulation as a function of crossing angle. In this case the junction conductance per unit area is essentially a constant. By contrast, interfacial thermal conductance between multiwalled carbon nanotubes (MWCNTs) is shown to increase with diameter of the nanotubes by recent experimental studies [1

  2. Tunable Interfacial Thermal Conductance by Molecular Dynamics

    NASA Astrophysics Data System (ADS)

    Shen, Meng

    We study the mechanism of tunable heat transfer through interfaces between solids using a combination of non-equilibrium molecular dynamics simulation (NEMD), vibrational mode analysis and wave packet simulation. We investigate how heat transfer through interfaces is affected by factors including pressure, interfacial modulus, contact area and interfacial layer thickness, with an overreaching goal of developing fundamental knowledge that will allow one to tailor thermal properties of interfacial materials. The role of pressure and interfacial stiffness is unraveled by our studies on an epitaxial interface between two Lennard-Jones (LJ) crystals. The interfacial stiffness is varied by two different methods: (i) indirectly by applying pressure which due to anharmonic nature of bonding, increases interfacial stiffness, and (ii) directly by changing the interfacial bonding strength by varying the depth of the potential well of the LJ potential. When the interfacial bonding strength is low, quantitatively similar behavior to pressure tuning is observed when the interfacial thermal conductance is increased by directly varying the potential-well depth parameter of the LJ potential. By contrast, when the interfacial bonding strength is high, thermal conductance is almost pressure independent, and even slightly decreases with increasing pressure. This decrease can be explained by the change in overlap between the vibrational densities of states of the two crystalline materials. The role of contact area is studied by modeling structures comprised of Van der Waals junctions between single-walled nanotubes (SWCNT). Interfacial thermal conductance between SWCNTs is obtained from NEMD simulation as a function of crossing angle. In this case the junction conductance per unit area is essentially a constant. By contrast, interfacial thermal conductance between multiwalled carbon nanotubes (MWCNTs) is shown to increase with diameter of the nanotubes by recent experimental studies [1

  3. Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates

    NASA Astrophysics Data System (ADS)

    Zhao, Lianfeng; Tan, Zhen; Wang, Jing; Xu, Jun

    2014-01-01

    Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electrical properties of Al2O3 and HfO2 gate dielectric films on GaSb substrates were investigated carefully. It is found that the dielectric quality and the interfacial properties of the Al2O3 and HfO2 films are improved by ozone PDT. After in-situ ozone PDT for 5 min, the Al2O3 and HfO2 films on GaSb substrates exhibit improved electrical and interfacial properties, such as reduced frequency dispersion, gate leakage current, border traps and interface traps. Interface trap density is reduced by ∼24% for the Al2O3/GaSb stacks and ∼27% for the HfO2/GaSb stacks. In-situ ozone PDT is proved to be a promising technique in improving the quality of high-k gate stacks on GaSb substrates.

  4. CdS/CdSe quantum dots and ZnPc dye co-sensitized solar cells with Au nanoparticles/graphene oxide as efficient modified layer.

    PubMed

    Chen, Cong; Cheng, Yu; Jin, Junjie; Dai, Qilin; Song, Hongwei

    2016-10-15

    Co-sensitization by using two or more sensitizers with complementary absorption spectra to expand the spectral response range is an effective approach to enhance device performance of quantum dot sensitized solar cells (QDSSCs). To improve the light-harvesting in the visible/near-infrared (NIR) region, organic dye zinc phthalocyanine (ZnPc) was combined with CdS/CdSe quantum dots (QDs) for co-sensitized solar cells based on ZnO inverse opals (IOs) as photoanode. The resulting co-sensitized device shows an efficient panchromatic spectral response feature to ∼750nm and presents an overall conversion efficiency of 4.01%, which is superior to that of the individual ZnPc-sensitized solar cells and CdS/CdSe-sensitized solar cells. Meanwhile, an Au nanoparticles/graphene oxide (Au NPs/GO) composite layer was successfully prepared to modify Cu2S counter electrode for the co-sensitized solar cells. Reducing the carrier recombination process by GO and catalytic process of Au NPs leads to increased power conversion efficiency(PCE) from 4.01 to 4.60% and sustainable stability remains ∼85% of its original value after 60min light exposure. In this paper, introduction of the organic dyes as co-sensitizer and Au NPs/GO as counter electrode modified layer has been proved to be an effective route to improve the performance of QDSSCs. PMID:27399618

  5. CdS/CdSe quantum dots and ZnPc dye co-sensitized solar cells with Au nanoparticles/graphene oxide as efficient modified layer.

    PubMed

    Chen, Cong; Cheng, Yu; Jin, Junjie; Dai, Qilin; Song, Hongwei

    2016-10-15

    Co-sensitization by using two or more sensitizers with complementary absorption spectra to expand the spectral response range is an effective approach to enhance device performance of quantum dot sensitized solar cells (QDSSCs). To improve the light-harvesting in the visible/near-infrared (NIR) region, organic dye zinc phthalocyanine (ZnPc) was combined with CdS/CdSe quantum dots (QDs) for co-sensitized solar cells based on ZnO inverse opals (IOs) as photoanode. The resulting co-sensitized device shows an efficient panchromatic spectral response feature to ∼750nm and presents an overall conversion efficiency of 4.01%, which is superior to that of the individual ZnPc-sensitized solar cells and CdS/CdSe-sensitized solar cells. Meanwhile, an Au nanoparticles/graphene oxide (Au NPs/GO) composite layer was successfully prepared to modify Cu2S counter electrode for the co-sensitized solar cells. Reducing the carrier recombination process by GO and catalytic process of Au NPs leads to increased power conversion efficiency(PCE) from 4.01 to 4.60% and sustainable stability remains ∼85% of its original value after 60min light exposure. In this paper, introduction of the organic dyes as co-sensitizer and Au NPs/GO as counter electrode modified layer has been proved to be an effective route to improve the performance of QDSSCs.

  6. Influence of the active layer nanomorphology on device performance for ternary PbS x Se1-x quantum dots based solution-processed infrared photodetector

    NASA Astrophysics Data System (ADS)

    Song, Taojian; Cheng, Haijuan; Fu, Chunjie; He, Bo; Li, Weile; Xu, Junfeng; Tang, Yi; Yang, Shengyi; Zou, Bingsuo

    2016-04-01

    In this paper, the influence of the active layer nanomorphology on device performance for ternary PbS x Se1-x quantum dot-based solution-processed infrared photodetector is presented. Firstly, ternary PbS x Se1-x quantum dots (QDs) in various chemical composition were synthesized and the bandgap of the ternary PbS x Se1-x QDs can be controlled by the component ratio of S/(S + Se), and then field-effect transistor (FET) based photodetectors Au/PbS0.4Se0.6:P3HT/PMMA/Al, in which ternary PbS0.4Se0.6 QDs doped with poly(3-hexylthiophene) (P3HT) act as the active layer and poly(methyl methacrylate) (PMMA) as the dielectric layer, were presented. By changing the weight ratio of P3HT to PbS0.4Se0.6 QDs (K = MP3HT:MQDs) in dichlorobenzene solution, we found that the device with K = 2:1 shows optimal electrical property in dark; however, the device with K = 1:2 demonstrated optimal performance under illumination, showing a maximum responsivity and specific detectivity of 55.98 mA W-1 and 1.02 × 1010 Jones, respectively, at low V DS = -10 V and V G = 3 V under 980 nm laser with an illumination intensity of 0.1 mW cm-2. By measuring the atomic force microscopy phase images of PbS0.4Se0.6:P3HT films in different weight ratio K, our experimental data show that the active layer nanomorphology has a great influence on the device performance. Also, it provides an easy way to fabricate high performance solution-processed infrared photodetector.

  7. Influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dots based solution-processed infrared photodetector.

    PubMed

    Song, Taojian; Cheng, Haijuan; Fu, Chunjie; He, Bo; Li, Weile; Xu, Junfeng; Tang, Yi; Yang, Shengyi; Zou, Bingsuo

    2016-04-22

    In this paper, the influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dot-based solution-processed infrared photodetector is presented. Firstly, ternary PbS(x)Se(1-x) quantum dots (QDs) in various chemical composition were synthesized and the bandgap of the ternary PbS(x)Se(1-x) QDs can be controlled by the component ratio of S/(S + Se), and then field-effect transistor (FET) based photodetectors Au/PbS0.4Se0.6:P3HT/PMMA/Al, in which ternary PbS0.4Se0.6 QDs doped with poly(3-hexylthiophene) (P3HT) act as the active layer and poly(methyl methacrylate) (PMMA) as the dielectric layer, were presented. By changing the weight ratio of P3HT to PbS0.4Se0.6 QDs (K = M(P3HT):M(QDs)) in dichlorobenzene solution, we found that the device with K = 2:1 shows optimal electrical property in dark; however, the device with K = 1:2 demonstrated optimal performance under illumination, showing a maximum responsivity and specific detectivity of 55.98 mA W(-1) and 1.02 × 10(10) Jones, respectively, at low V(DS) = -10 V and V(G) = 3 V under 980 nm laser with an illumination intensity of 0.1 mW cm(-2). By measuring the atomic force microscopy phase images of PbS0.4Se0.6:P3HT films in different weight ratio K, our experimental data show that the active layer nanomorphology has a great influence on the device performance. Also, it provides an easy way to fabricate high performance solution-processed infrared photodetector. PMID:26963474

  8. Influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dots based solution-processed infrared photodetector.

    PubMed

    Song, Taojian; Cheng, Haijuan; Fu, Chunjie; He, Bo; Li, Weile; Xu, Junfeng; Tang, Yi; Yang, Shengyi; Zou, Bingsuo

    2016-04-22

    In this paper, the influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dot-based solution-processed infrared photodetector is presented. Firstly, ternary PbS(x)Se(1-x) quantum dots (QDs) in various chemical composition were synthesized and the bandgap of the ternary PbS(x)Se(1-x) QDs can be controlled by the component ratio of S/(S + Se), and then field-effect transistor (FET) based photodetectors Au/PbS0.4Se0.6:P3HT/PMMA/Al, in which ternary PbS0.4Se0.6 QDs doped with poly(3-hexylthiophene) (P3HT) act as the active layer and poly(methyl methacrylate) (PMMA) as the dielectric layer, were presented. By changing the weight ratio of P3HT to PbS0.4Se0.6 QDs (K = M(P3HT):M(QDs)) in dichlorobenzene solution, we found that the device with K = 2:1 shows optimal electrical property in dark; however, the device with K = 1:2 demonstrated optimal performance under illumination, showing a maximum responsivity and specific detectivity of 55.98 mA W(-1) and 1.02 × 10(10) Jones, respectively, at low V(DS) = -10 V and V(G) = 3 V under 980 nm laser with an illumination intensity of 0.1 mW cm(-2). By measuring the atomic force microscopy phase images of PbS0.4Se0.6:P3HT films in different weight ratio K, our experimental data show that the active layer nanomorphology has a great influence on the device performance. Also, it provides an easy way to fabricate high performance solution-processed infrared photodetector.

  9. Controlling thermal conductance through quantum dot roughening at interfaces

    NASA Astrophysics Data System (ADS)

    Hopkins, Patrick E.; Duda, John C.; Petz, Christopher W.; Floro, Jerrold A.

    2011-07-01

    We examine the fundamental phonon mechanisms affecting the interfacial thermal conductance across a single layer of quantum dots (QDs) on a planar substrate. We synthesize a series of GexSi1-x QDs by heteroepitaxial self-assembly on Si surfaces and modify the growth conditions to provide QD layers with different root-mean-square (rms) roughness levels in order to quantify the effects of roughness on thermal transport. We measure the thermal boundary conductance (hK) with time-domain thermoreflectance. The trends in thermal boundary conductance show that the effect of the QDs on hK are more apparent at elevated temperatures, while at low temperatures, the QD patterning does not drastically affect hK. The functional dependence of hK with rms surface roughness reveals a trend that suggests that both vibrational mismatch and changes in the localized phonon transport near the interface contribute to the reduction in hK. We find that QD structures with rms roughnesses greater than 4 nm decrease hK at Si interfaces by a factor of 1.6. We develop an analytical model for phonon transport at rough interfaces based on a diffusive scattering assumption and phonon attenuation that describes the measured trends in hK. This indicates that the observed reduction in thermal conductivity in SiGe quantum dot superlattices is primarily due to the increased physical roughness at the interfaces, which creates additional phonon resistive processes beyond the interfacial vibrational mismatch.

  10. Interfacial behavior of polymer electrolytes

    SciTech Connect

    Kerr, John; Kerr, John B.; Han, Yong Bong; Liu, Gao; Reeder, Craig; Xie, Jiangbing; Sun, Xiaoguang

    2003-06-03

    Evidence is presented concerning the effect of surfaces on the segmental motion of PEO-based polymer electrolytes in lithium batteries. For dry systems with no moisture the effect of surfaces of nano-particle fillers is to inhibit the segmental motion and to reduce the lithium ion transport. These effects also occur at the surfaces in composite electrodes that contain considerable quantities of carbon black nano-particles for electronic connection. The problem of reduced polymer mobility is compounded by the generation of salt concentration gradients within the composite electrode. Highly concentrated polymer electrolytes have reduced transport properties due to the increased ionic cross-linking. Combined with the interfacial interactions this leads to the generation of low mobility electrolyte layers within the electrode and to loss of capacity and power capability. It is shown that even with planar lithium metal electrodes the concentration gradients can significantly impact the interfacial impedance. The interfacial impedance of lithium/PEO-LiTFSI cells varies depending upon the time elapsed since current was turned off after polarization. The behavior is consistent with relaxation of the salt concentration gradients and indicates that a portion of the interfacial impedance usually attributed to the SEI layer is due to concentrated salt solutions next to the electrode surfaces that are very resistive. These resistive layers may undergo actual phase changes in a non-uniform manner and the possible role of the reduced mobility polymer layers in dendrite initiation and growth is also explored. It is concluded that PEO and ethylene oxide-based polymers are less than ideal with respect to this interfacial behavior.

  11. Interfacial and near interfacial crack growth phenomena in metal bonded alumina

    SciTech Connect

    Kruzic, Jamie Joseph

    2002-03-01

    Metal/ceramic interfaces can be found in many engineering applications including microelectronic packaging, multi-layered films, coatings, joints, and composite materials. In order to design reliable engineering systems that contain metal/ceramic interfaces, a comprehensive understanding of interfacial and near interfacial failure mechanisms is necessary.

  12. Supramolecular interfacial architectures for biosensing

    NASA Astrophysics Data System (ADS)

    Yu, Fang; Yao, Danfeng; Christensen, Danica; Neumann, Thomas; Sinner, Eva-Kathrin; Knoll, Wolfgang

    2004-12-01

    This contribution summarizes some of our efforts in designing, assembling and functionally characterizing supramolecular interfacial architectures for bio-affinity studies and for biosensor development. All the surface interaction studies will be based on the recently introduced novel sensor platforms involving surface plasmon fluorescence spectroscopy (SPFS) and -microscopy (SPFM). Emphasis will be put on documenting the distance-dependence of fluorescence intensity at the metal-dielectric interface and utilizing this principle to optimize the conformation/orientation of the interfacial supra-molecular sensor coatings. This is exemplified by a number of examples, including a layer-by-layer assembly system, antibody-antigen interactions, oligonucleotide-oligonucleotide, and oligonucleotide-PCR amplicon hybridization. For practical sensing purposes, a three-dimensionally extended surface coating is then employed to overcome the fluorescence quenching problem on a planar matrix. A commercial dextran layer is shown to be an optimized matrix for SPFS, with an example of a protein-binding study.

  13. Role of interfacial carbon layer in the thermal diffusivity/conductivity of silicon carbide fiber-reinforced reaction-bonded silicon nitride matrix composites

    NASA Technical Reports Server (NTRS)

    Bhatt, Hemanshu; Donaldson, Kimberly Y.; Hasselman, D. P. H.; Bhatt, Ramakrishna T.

    1992-01-01

    Experiments were carried out on samples of reaction-bonded silicon nitride uniaxially reinforced by SiC monofilaments with and without a 3-micron-thick carbon-rich coating. It is found that a combination of a carbon coatings on the fibers and an interfacial gap due to the thermal expansion mismatch in the composite can significantly (by a factor of 2) lower the effective thermal diffusivity in the direction transverse to the fiber. At atmospheric pressure, gaseous conduction across the interfacial gap makes a significant contribution to the heat transfer across the interface, indicated by significantly lower values of the effective thermal diffusivity under vacuum than in nitrogen or helium at atmospheric pressure.

  14. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

    PubMed

    Tanabe, Katsuaki; Guimard, Denis; Bordel, Damien; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2010-05-10

    An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).

  15. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

    SciTech Connect

    Shimomura, Kenichi; Ohshita, Yoshio; Kamiya, Itaru; Suzuki, Hidetoshi; Sasaki, Takuo; Takahasi, Masamitu

    2015-11-14

    Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures.

  16. Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

    SciTech Connect

    McKerracher, Ian; Fu Lan; Hoe Tan, Hark; Jagadish, Chennupati

    2012-12-01

    Various approaches can be used to selectively control the amount of intermixing in III-V quantum well and quantum dot structures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dot structures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiO{sub x}N{sub y} films. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.

  17. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

    PubMed Central

    2014-01-01

    An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, responsible for a significant degradation of photoluminescence (PL), are thereby solved allowing the achievement of room-temperature (RT) emission. A particularly strong improvement on the PL is obtained when the growth rate of the CL is increased. This is likely due to an improvement in the structural quality of the quaternary alloy that resulted from reduced strain and composition inhomogeneities. Nevertheless, a significant reduction of Sb and N incorporation was found when the growth rate was increased. Indeed, the incorporation of N is intrinsically limited to a maximum value of approximately 1.6% when the growth rate is at 2.0 ML s−1. Therefore, achieving RT emission and extending it somewhat beyond 1.3 μm were possible by means of a compromise among the growth conditions. This opens the possibility of exploiting the versatility on band structure engineering offered by this QD-CL structure in devices working at RT. PACS 81.15.Hi (molecular beam epitaxy); 78.55.Cr (III-V semiconductors); 73.21.La (quantum dots) PMID:24438542

  18. Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

    NASA Astrophysics Data System (ADS)

    Pavelescu, Emil-Mihai; Polojärvi, Ville; Schramm, Andreas; Tukiainen, Antti; Aho, Arto; Zhang, Wenxin; Puustinen, Janne; Salmi, Joel; Guina, Mircea

    2016-02-01

    We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.

  19. Hydrogenic impurity, external electric and magnetic fields effects on the nonlinear optical properties of a multi-layer spherical quantum dot

    NASA Astrophysics Data System (ADS)

    Tanhaei, M. H.; Rezaei, G.

    2016-10-01

    In this work, effects of an on-center hydrogenic impurity, external electric and magnetic fields on the optical rectification coefficient (ORC), second and third harmonic generations (SHG and THG) of a multi-layer spherical quantum dot (MLSQD) are studied. Energy eigenvalues and eigenvectors are calculated using the direct matrix diagonalization method and optical properties are obtained using the compact density matrix approach. Our results reveal that the hydrogenic impurity and external fields have a great influence on these optical quantities. Hydrogenic impurity reduces the magnitude of the resonant peaks and shifts them to the higher energies. An increase in the magnetic (electric) field, leads to increase (decrease) the interval energies and the dipole moment matrix elements. Therefore, resonant peaks of these optical quantities find an obvious blue (red) shift and their magnitudes enhance (diminish) with increasing the external magnetic (electric) field.

  20. Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lou, Qing; Ji, Wen-Yu; Zhao, Jia-Long; Shan, Chong-Xin

    2016-08-01

    In this study, we report quantum-dot light-emitting devices (QD-LEDs) using ammonia reduced graphene oxide (rGO) as a hole injection layer (HIL). Compared with pristine GO, QD-LEDs employing rGO as a HIL show higher maximum luminance (936 cd m‑2 versus 699 cd m‑2) and lower turn-on voltage (V th, 5.0 V versus 7.5 V). The improved performance can be attributed to the synergistic effect of the improved conductivity (1.27 μS cm‑1 versus 0.139 μS cm‑1) and decreased work function (5.27 eV versus 5.40 eV) of the GO after the reduction process. The above results indicate that ammonia functionalized graphene may be a promising hole injection material for QD-LEDs.

  1. Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes.

    PubMed

    Lou, Qing; Ji, Wen-Yu; Zhao, Jia-Long; Shan, Chong-Xin

    2016-08-12

    In this study, we report quantum-dot light-emitting devices (QD-LEDs) using ammonia reduced graphene oxide (rGO) as a hole injection layer (HIL). Compared with pristine GO, QD-LEDs employing rGO as a HIL show higher maximum luminance (936 cd m(-2) versus 699 cd m(-2)) and lower turn-on voltage (V th, 5.0 V versus 7.5 V). The improved performance can be attributed to the synergistic effect of the improved conductivity (1.27 μS cm(-1) versus 0.139 μS cm(-1)) and decreased work function (5.27 eV versus 5.40 eV) of the GO after the reduction process. The above results indicate that ammonia functionalized graphene may be a promising hole injection material for QD-LEDs. PMID:27347655

  2. Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lou, Qing; Ji, Wen-Yu; Zhao, Jia-Long; Shan, Chong-Xin

    2016-08-01

    In this study, we report quantum-dot light-emitting devices (QD-LEDs) using ammonia reduced graphene oxide (rGO) as a hole injection layer (HIL). Compared with pristine GO, QD-LEDs employing rGO as a HIL show higher maximum luminance (936 cd m-2 versus 699 cd m-2) and lower turn-on voltage (V th, 5.0 V versus 7.5 V). The improved performance can be attributed to the synergistic effect of the improved conductivity (1.27 μS cm-1 versus 0.139 μS cm-1) and decreased work function (5.27 eV versus 5.40 eV) of the GO after the reduction process. The above results indicate that ammonia functionalized graphene may be a promising hole injection material for QD-LEDs.

  3. Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

    NASA Astrophysics Data System (ADS)

    Ma, Zehao; Ooi, Poh Choon; Li, Fushan; Yun, Dong Yeol; Kim, Tae Whan

    2015-10-01

    Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current-voltage ( I- V) curves showed a bistable current behavior and the presence of hysteresis. The current-time ( I- t) curves showed that the fabricated NVM memory devices were stable up to 1 × 104 s with a distinct ON/OFF ratio of 104 and were reprogrammable when the endurance test was performed. The extrapolation of the I- t curve to 105 s with corresponding current ON/OFF ratio 1 × 105 indicated a long performance stability of the NVM devices. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and Child-Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I- V characteristics.

  4. Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho; Yu, Bong-Ahn

    2015-03-01

    We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.

  5. Magnesium effects on CdSe self-assembled quantum dot formation on Zn xCd yMg 1-x-ySe layers

    NASA Astrophysics Data System (ADS)

    Noemi Perez-Paz, M.; Lu, Hong; Shen, Aidong; Jean Mary, F.; Akins, Daniel; Tamargo, Maria C.

    2006-09-01

    Optical and morphological studies are used to investigate the effects of chemical composition and, in particular, the magnesium content of the Zn xCd yMg 1-x-ySe barrier layers on the size, density and uniformity of CdSe self-assembled quantum dots (QDs). A reduction of the uncapped QD size, as well as a blue shift of the capped QD photoluminescence peak position by increasing Mg concentration in the Zn xCd yMg 1-x-ySe barrier has been demonstrated by changing the Mg cell temperature during growth. In addition, a more uniform and more densely packed QD layer has been observed with an increase of the MgSe fraction in the Zn xCd yMg 1-x-ySe barrier layer using three-dimensional topographic atomic force microscopy images of the surface of uncapped QDs. Results point to Mg as a chemical factor that induces QD formation, either by increasing the density of atomic steps or/and by changing the energy of the Zn xCd yMg 1-x-ySe surface.

  6. Tris(trimethylsilyl)borate as an electrolyte additive for improving interfacial stability of high voltage layered lithium-rich oxide cathode/carbonate-based electrolyte

    NASA Astrophysics Data System (ADS)

    Li, Jianhui; Xing, Lidan; Zhang, Ruiqin; Chen, Min; Wang, Zaisheng; Xu, Mengqing; Li, Weishan

    2015-07-01

    Tris(trimethylsilyl)borate (TMSB) is used as an electrolyte additive for high voltage lithium-rich oxide cathode of lithium ion battery. The interfacial natures of Li[Li0.2Mn0.54Ni0.13Co0.13]O2/carbonate-based electrolyte are investigated with a combination of electrochemical measurements and physical characterizations. Charge/discharge tests show that the cyclic performance of Li[Li0.2Mn0.54Ni0.13Co0.13]O2 in a mixed carbonate electrolyte is significantly improved by using TMSB. After 200 cycles between 2 V and 4.8 V (vs. Li/Li+) at 0.5 C rate, the capacity retention of Li[Li0.2Mn0.54Ni0.13Co0.13]O2 is only 19% in the blank electrolyte, while it is improved to 74% when 0.5% TMSB is applied. The results from physical characterizations demonstrate that this excellent cyclic performance is attributed to the improved interfacial stability of Li[Li0.2Mn0.54Ni0.13Co0.13]O2/electrolyte due to the thin and protective film generated by TMSB.

  7. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect

    Beltran, AM; Ben, Teresa; Sanchez, AM; Sales Lerida, David; Chisholm, Matthew F; Varela del Arco, Maria; Pennycook, Stephen J; Galindo, Pedro; Ripalda, JM; Molina Rubio, Sergio I

    2008-01-01

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  8. A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer

    NASA Astrophysics Data System (ADS)

    Kaya, A.; Çetinkaya, H. G.; Altındal, Ş.; Uslu, I.

    2016-05-01

    In order to compare the main electrical parameters such as ideality factor (n), barrier height (BH) (ΦI-V), series (Rs) and shunt (Rsh) resistances and energy density distribution profile of surface states (Nss), the Au/n-Si (MS) Schotthy diodes (SDs), with and without interfacial (Ca1.9Pr0.1Co4Ox) layer were obtained from the current-voltage (I-V ) measurements at room temperature. The other few electrical parameters such as Fermi energy level (EF), BH (ΦC-V), Rs and voltage dependence of Nss profile were also obtained from the capacitance-voltage (C-V ) measurements. The voltage dependence of Nss profile has two distinctive peaks in the depletion region for two diodes and they were attributed to a particular distribution of Nss located at metal-semiconductor (MS) interface. All of these results have been investigated at room temperature and results have been compared with each other. Experimental results confirmed that interfacial (Ca1.9Pr0.1Co4Ox) layer enhanced diode performance in terms of rectifier rate (RR = IF/IR at ± 3.4V), Nss (at 0.5eV) and Rsh (‑3.4V) with values of 265, 5.38 × 1013eV‑1 ṡcm‑2 and 7.87 × 104Ω for MS type Schottky barrier diode and 2.56 × 106, 1.15 × 1013eV‑1 ṡcm‑2 and 7.50 × 108Ω for metal-insulator-semiconductor (MIS) type SBD, respectively. It is clear that the rectifying ratio of MIS type SBD is about 9660 times greater than MS type SBD. The value of barrier height (BH) obtained from C-V data is higher than the forward bias I-V data and it was attributed to the nature of measurements. These results confirmed that the interfacial (Ca1.9Pr0.1Co4Ox) layer has considerably improved the performance of SD.

  9. A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer

    NASA Astrophysics Data System (ADS)

    Kaya, A.; Çetinkaya, H. G.; Altındal, Ş.; Uslu, I.

    2016-05-01

    In order to compare the main electrical parameters such as ideality factor (n), barrier height (BH) (ΦI-V), series (Rs) and shunt (Rsh) resistances and energy density distribution profile of surface states (Nss), the Au/n-Si (MS) Schotthy diodes (SDs), with and without interfacial (Ca1.9Pr0.1Co4Ox) layer were obtained from the current-voltage (I-V ) measurements at room temperature. The other few electrical parameters such as Fermi energy level (EF), BH (ΦC-V), Rs and voltage dependence of Nss profile were also obtained from the capacitance-voltage (C-V ) measurements. The voltage dependence of Nss profile has two distinctive peaks in the depletion region for two diodes and they were attributed to a particular distribution of Nss located at metal-semiconductor (MS) interface. All of these results have been investigated at room temperature and results have been compared with each other. Experimental results confirmed that interfacial (Ca1.9Pr0.1Co4Ox) layer enhanced diode performance in terms of rectifier rate (RR = IF/IR at ± 3.4V), Nss (at 0.5eV) and Rsh (-3.4V) with values of 265, 5.38 × 1013eV-1 ṡcm-2 and 7.87 × 104Ω for MS type Schottky barrier diode and 2.56 × 106, 1.15 × 1013eV-1 ṡcm-2 and 7.50 × 108Ω for metal-insulator-semiconductor (MIS) type SBD, respectively. It is clear that the rectifying ratio of MIS type SBD is about 9660 times greater than MS type SBD. The value of barrier height (BH) obtained from C-V data is higher than the forward bias I-V data and it was attributed to the nature of measurements. These results confirmed that the interfacial (Ca1.9Pr0.1Co4Ox) layer has considerably improved the performance of SD.

  10. Use of Mixed CH3-/HC(O)CH2CH2-Si(111) Functionality to Control Interfacial Chemical and Electronic Properties During the Atomic-Layer Deposition of Ultrathin Oxides on Si(111).

    PubMed

    O'Leary, Leslie E; Strandwitz, Nicholas C; Roske, Christopher W; Pyo, Suyeon; Brunschwig, Bruce S; Lewis, Nathan S

    2015-02-19

    Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s(-1) whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s(-1). During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.

  11. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

    SciTech Connect

    Aoki, T. Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

    2014-07-21

    Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

  12. Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties.

    PubMed

    Palmstrom, Axel F; Santra, Pralay K; Bent, Stacey F

    2015-08-01

    Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.

  13. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    SciTech Connect

    Utrilla, A. D.; Ulloa, J. M. Guzman, A.; Hierro, A.

    2014-07-28

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves the GaAsSbN immiscibility-related problems. Strong fluctuations in the CL composition and strain field as well as in the QD size distribution are significantly reduced, and a more regular CL interface is also obtained. Room-temperature (RT) photoluminescence (PL) is obtained for overall N contents as high as 3%, yielding PL peak wavelengths beyond 1.4 μm in samples with a type-II band alignment. High external quantum efficiency electroluminescence and photocurrent from the QD ground state are also demonstrated at RT in a single QD-layer p-i-n device. Thus, it becomes possible to combine and transfer the complementary benefits of Sb- and N-containing GaAs alloys to InAs QD-based optoelectronics.

  14. Efficient CdSe quantum dot-sensitized solar cells prepared by an improved successive ionic layer adsorption and reaction process.

    PubMed

    Lee, Hyojoong; Wang, Mingkui; Chen, Peter; Gamelin, Daniel R; Zakeeruddin, Shaik M; Grätzel, Michael; Nazeeruddin, Md K

    2009-12-01

    In pursuit of efficient quantum dot (QD)-sensitized solar cells based on mesoporous TiO(2) photoanodes, a new procedure for preparing selenide (Se(2-)) was developed and used for depositing CdSe QDs in situ over TiO(2) mesopores by the successive ionic layer adsorption and reaction (SILAR) process in ethanol. The sizes and density of CdSe QDs over TiO(2) were controlled by the number of SILAR cycles applied. After some optimization of these QD-sensitized TiO(2) films in regenerative photoelectrochemical cells using a cobalt redox couple [Co(o-phen)(3)(2+/3+)], including addition of a final layer of CdTe, over 4% overall efficiencies were achieved at 100 W/m(2) with about 50% IPCE at its maximum. Light-harvesting properties and transient voltage decay/impedance measurements confirmed that CdTe-terminated CdSe QD cells gave better charge-collection efficiencies and kinetic parameters than corresponding CdSe QD cells. In a preliminary study, a CdSe(Te) QD-sensitized TiO(2) film was combined with an organic hole conductor, spiro-OMeTAD, and shown to exhibit a promising efficiency of 1.6% at 100 W/m(2) in inorganic/organic hybrid all-solid-state cells.

  15. Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

    SciTech Connect

    Kim, Yeongho; Ban, Keun-Yong Honsberg, Christiana B.; Boley, Allison; Smith, David J.

    2015-10-26

    The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.

  16. Submicroporous/microporous and compatible/incompatible multi-functional dual-layer polymer electrolytes and their interfacial characteristics with lithium metal anode

    NASA Astrophysics Data System (ADS)

    Lee, Young-Gi; Kyhm, Kwangseuk; Choi, Nam-Soon; Ryu, Kwang Sun

    A novel multi-functional dual-layer polymer electrolyte was prepared by impregnating the interconnected pores with an ethylene carbonate (EC)/dimethyl carbonate (DMC)/lithium hexafluorophosphate (LiPF 6) solution. An incompatible layer is based on a microporous polyethylene (PE) and a compatible layer, based on a poly(vinylidenefluoride-co-hexafluoropropylene) (P(VdF-co-HFP)) is sub-microporous and compatible with an electrolyte solution. The Li electrode/the dual-layer polymer electrolyte/Li[Ni 0.15Li 0.23M n0.62]O 2 cell showed stable cycle performance under prolonged cycle number. This behavior is due to the enhanced compatibility between the matrix polymer and the liquid electrolytes within the submicroporous compatible layer, which could lead to a controlled Li + deposition on the Li anode surface by forming homegeneous electrolyte zone near the anode.

  17. High temperature interfacial superconductivity

    SciTech Connect

    Bozovic, Ivan; Logvenov, Gennady; Gozar, Adrian Mihai

    2012-06-19

    High-temperature superconductivity confined to nanometer-scale interfaces has been a long standing goal because of potential applications in electronic devices. The spontaneous formation of a superconducting interface in bilayers consisting of an insulator (La.sub.2CuO.sub.4) and a metal (La.sub.1-xSr.sub.xCuO.sub.4), neither of which is superconducting per se, is described. Depending upon the layering sequence of the bilayers, T.sub.c may be either .about.15 K or .about.30 K. This highly robust phenomenon is confined to within 2-3 nm around the interface. After exposing the bilayer to ozone, T.sub.c exceeds 50 K and this enhanced superconductivity is also shown to originate from a 1 to 2 unit cell thick interfacial layer. The results demonstrate that engineering artificial heterostructures provides a novel, unconventional way to fabricate stable, quasi two-dimensional high T.sub.c phases and to significantly enhance superconducting properties in other superconductors. The superconducting interface may be implemented, for example, in SIS tunnel junctions or a SuFET.

  18. Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell

    NASA Astrophysics Data System (ADS)

    Masudy-Panah, Saeid; Dalapati, Goutam Kumar; Radhakrishnan, K.; Kumar, Avishek; Tan, Hui Ru

    2014-08-01

    Copper-rich interfacial-layer (Cu-rich IL) is formed during sputter deposition of cupric oxide (CuO) layer on silicon (Si). It has significant impact on the performance of p-CuO/n-Si heterojunction solar cells. In this report, CuO films deposited on Si at different RF-power levels using single and two-step RF-sputtering techniques and p-CuO/n-Si heterojunction solar cells have been investigated. Systematic characterization using XPS, AFM, XRD, Raman, and HR-TEM reveal that two-step RF-sputtering technique offers better crystal quality CuO film with thinner Cu-rich IL layer. Photovoltaic (PV) properties with an open-circuit voltage (Voc) of 421 mV, short circuit current (Jsc) of 4.5 mA/cm2, and a photocurrent of 8.3 mA/cm2 have been achieved for the cells prepared using two-step sputtering method, which are significantly higher than that for the solar cells fabricated using a single-step sputtering. The PV properties were further improved by depositing CuO films at higher working pressure with nitrogen doping. The efficiency of the best device achieved is approximately 1.21%, which is the highest value reported for p-CuO/n-Si heterojunction based solar cells.

  19. Interfacial structure of multi-layered thin-films produced by pulsed laser deposition for use in small-scale ceramic capacitors

    NASA Astrophysics Data System (ADS)

    Araki, Takao; Hino, Takanori; Ohara, Masahiro

    2014-08-01

    The aim of this study was to develop thin film capacitors with superior properties that could provide an alternative to materials currently used in conventional multi-layer ceramic capacitors fabricated by sintering. To this end, an artificial dielectric super lattice technique, incorporating pulsed laser deposition, was applied to improving the dielectric properties of thin film capacitors. This method permits the A-site atoms of a perovskite ABO3 structure to be selected layer by layer at a nanoscopic scale; consequently, multi-layer BaTiO3- SrTiO3 thin films were produced on Pt(111)/Ti/SiO2/Si(100) and SrTiO3(111) substrates. Hetero-epitaxial grain growth was observed between BaTiO3 and SrTiO3, with the lattice mismatch between them introducing a compressive residual strain at the interface. The dielectric properties of these multi-layer thin-film capacitors were found to be superior to those of conventional solid-solution thin films once the thickness of the layers and the ratio of the two oxides were optimized.

  20. Improving charge transport of P3HT:PCBM organic solar cell using MoO3 nanoparticles as an interfacial buffer layer

    NASA Astrophysics Data System (ADS)

    Kim, Jae-Hyoung; Park, Eung-Kyu; Kim, Ji-Hwan; Cho, Hyeong Jun; Lee, Dong-Hoon; Kim, Yong-Sang

    2016-05-01

    In this work, P3HT:PCBM based organic solar cells (OSCs) were fabricated. We investigated the protection of PEDOT:PSS from active layer using the solution processed molybdenum oxide nanoparticles layer (MoO3 NPs, ≤100 nm). The device structure was ITO/ZnO/P3HT: PCBM/MoO3/PEDOT:PSS/Ag. A thin film MoO3 NPs was spin-coated and it acts as a hole transporting layer between the active layer and PEDOT:PSS. The MoO3 NPs based device showed an improved short circuit current compared without MoO3 NP layer. The pristine OSCs showed short circuit current density ( J sc ) of 11.56 mA/cm2 and PCE of 3.70% under AM 1.5G (100 mW/cm2). MoO3 NPs based device showed an increased PCE of 4.11% with J sc of 12.74 mA/cm2. MoO3 NPs also decreased the charge recombination and resistance of the OSCs. [Figure not available: see fulltext.

  1. Synchrotron radiation photoemission study of interfacial electronic structure of HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As(001)-4 × 2 from atomic layer deposition

    SciTech Connect

    Pi, T. W. E-mail: gkwer@verizon.net E-mail: mhong@phys.ntu.edu.tw; Lin, T. D.; Chang, Y. C.; Hong, M. E-mail: gkwer@verizon.net E-mail: mhong@phys.ntu.edu.tw; Lin, H. Y.; Kwo, J. E-mail: gkwer@verizon.net E-mail: mhong@phys.ntu.edu.tw; Wertheim, G. K. E-mail: gkwer@verizon.net E-mail: mhong@phys.ntu.edu.tw

    2014-01-27

    The growth of a passivating layer on a In{sub 0.53}Ga{sub 0.47}As(001)-4 × 2 surface by atomic-layer deposition of tetrakis[ethylmethylamino]Hafnium (TEMAHf)) followed by the water pulse was investigated by synchrotron radiation photoemission. The Hf atoms maintain four-fold coordination, both after the initial TEMAHf deposition and the subsequent water pulse. The Hf atoms initially bond to the As dangling bonds of the surface As atom located on the edges of the raised ridges. One EMA ligand is removed in this process. Subsequent water exposure substitutes OH ligand for one or more remaining EMA ligands. These in turn react with TEMAHf to form Hf-O-Hf bonds allowing the hafnium oxides to grow. The surface In atoms on the terrace of the raised ridges were partially removed, but none bonded of the precursor atoms. Correlations between the interfacial electronic structure and the electric performance are discussed.

  2. Effect of sodium acetate additive in successive ionic layer adsorption and reaction on the performance of CdS quantum-dot-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Liu, I.-Ping; Chen, Liang-Yih; Lee, Yuh-Lang

    2016-09-01

    Sodium acetate (NaAc) is utilized as an additive in cationic precursors of the successive ionic layer adsorption and reaction (SILAR) process to fabricate CdS quantum-dot (QD)-sensitized photoelectrodes. The effects of the NaAc concentration on the deposition rate and distribution of QDs in mesoporous TiO2 films, as well as on the performance of CdS-sensitized solar cells are studied. The experimental results show that the presence of NaAc can significantly accelerate the deposition of CdS, improve the QD distribution across photoelectrodes, and thereby, increase the performance of solar cells. These results are mainly attributed to the pH-elevation effect of NaAc to the cationic precursors which increases the electrostatic interaction of the TiO2 film to cadmium ions. The light-to-energy conversion efficiency of the CdS-sensitized solar cell increases with increasing concentration of the NaAc and approaches a maximum value (3.11%) at 0.05 M NaAc. Additionally, an ionic exchange is carried out on the photoelectrode to transform the deposited CdS into CdS1-xSex ternary QDs. The light-absorption range of the photoelectrode is extended and an exceptional power conversion efficiency of 4.51% is achieved due to this treatment.

  3. Atomic layer deposition effect on the electrical properties of Al{sub 2}O{sub 3}-passivated PbS quantum dot field-effect transistors

    SciTech Connect

    So, Hye-Mi; Shim, Hyung Cheoul; Choi, Hyekyoung; Lee, Seung-Mo; Jeong, Sohee; Chang, Won Seok

    2015-03-02

    We have investigated the effect of atomic layer deposition (ALD) on the electrical properties of colloidal PbS quantum dot field-effect transistors (PbS QD-FETs). Low-temperature Al{sub 2}O{sub 3} ALD process was used to fill up the pore spaces of PbS QD films containing 1, 2-ethanedithiol ligands. Upon deposition of Al{sub 2}O{sub 3} on PbS film, the PbS QD-FETs showed ambipolar behavior. The treated film retained this property for over 2 months, despite of exposure to air. This change in the electrical properties of the PbS QD-FETs is attributed to the formation of electron channels in the Al{sub 2}O{sub 3}-passivated PbS film. We conclude that these electron transport channels in the Al{sub x}O{sub y}-PbS film are formed due to substitution of the Pb sites by Al metal and chemical reduction of Pb{sup 2+} ions, as determined by an analysis of the depth profile of the film using secondary ion mass spectrometry and X-ray photoelectron spectroscopy.

  4. Quantum Dots

    NASA Astrophysics Data System (ADS)

    Tartakovskii, Alexander

    2012-07-01

    Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

  5. Modification of ZnS-inserting layer in the TiO2 inverse opal-based photoanode to enhance the efficiency of quantum dot-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Deng, Fei; Wan, Xiangyu; Mei, Xingan; Fan, Runzhou; Yan, Xuemin; Wan, Li; Shi, Dean; Xiong, Yan

    2016-07-01

    Modification of ZnS-inserting layer in the titanium dioxide (TiO2) inverse opal-based photoanode was investigated, and it is an effective and easy approach to enhance the efficiency of quantum dot-sensitized solar cells (QDSSCs). The introduction of ZnS between TiO2 and quantum dots (QDs) not only enhanced the light harvesting of QDs on its top, but also lessened the charge-transfer resistances at the TiO2/QD/electrolyte interfaces. The TiO2 inverse opal-based QDSSCs increased the energy conversion efficiency by modifying the ZnS-inserting layer in the photoanode, particularly the CdS/CdSe QD co-sensitized solar cells which attained 79% rate of increase in cell efficiency.

  6. A layer-nanostructured assembly of PbS quantum dot/multiwalled carbon nanotube for a high-performance photoswitch

    PubMed Central

    Feng, Wei; Qin, Chengqun; Shen, Yongtao; Li, Yu; Luo, Wen; An, Haoran; Feng, Yiyu

    2014-01-01

    A layered nanostructure of a lead sulfide (PbS) quantum dot (QD)/multi-walled carbon nanotube (MWNT) hybrid was prepared by the electrostatic assembly after the phase transfer of PbS QDs from an organic to an aqueous phase. Well-crystallized PbS QDs with a narrow diameter (5.5 nm) was mono-dispersed on the sidewalls of MWNT by the electrostatic adsorption. Near-infrared absorption of PbS/MWNT nanostructures was improved and controlled by the packing density of PbS QDs. Efficient charge transfer between PbS and MWNT at the interface resulted in a remarkable quenching of photoluminescence up to 28.6% and a blue-shift of emission band by 300 nm. This feature was facilitated by band energy levels based on the intimate contact through the electrostatic interaction. Two-terminal devices using PbS/MWNT nanostructures showed an excellent on/off switching photocurrent and good stability during 20 cycles under light illumination due to electron transfer from PbS to MWNT. The photoswitch exhibited a high photo sensitivity up to 31.3% with the photocurrent of 18.3 μA under the light of 3.85 mW/cm2, which outperformed many QD/carbon-based nanocomposites. Results indicate that the electrostatic layered assembly of QD/MWNT nanostructure is an excellent platform for the fabrication of high-performance optoelectronic devices. PMID:24445285

  7. Effects of thickness layer on the photoluminescence properties of InAlAs/GaAlAs quantum dots

    NASA Astrophysics Data System (ADS)

    Daly, A. Ben; Bernardot, F.; Barisien, T.; Galopin, E.; Lemaître, A.; Maaref, M. A.; Testelin, C.

    2016-09-01

    We investigated the effect of InAlAs layer thickness on exciton-spin relaxation and optical properties of In0.62Al0.38As/Al0.67Ga0.33As QDs. The luminescence properties and carrier dynamics of QDs were studied by the temperature-dependent photoluminescence (PL) and pump-probe measurements. As the total amount of deposited In0.62Al0.38As alloy increased, the central position of the low-energy PL signal decreases, while its full width at half maximum (FWHM) increases. A monotonous redshift of the PL peak was observed with increasing temperature due to the electron-phonon scattering. From the pump-probe measurement, the spin relaxation time decreases with the monolayers at higher temperatures, in agreement with the phonon energy determinate by PL measurements.

  8. (In,Mn)As multilayer quantum dot structures

    SciTech Connect

    Bouravleuv, Alexei; Sapega, Victor; Nevedomskii, Vladimir; Khrebtov, Artem; Samsonenko, Yuriy; Cirlin, George

    2014-12-08

    (In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.

  9. Enhanced heteroepitaxial growth of CoCrPt-SiO{sub 2} perpendicular magnetic recording media on optimized Ru intermediate layers

    SciTech Connect

    Srinivasan, Kumar; Piramanayagam, S. N.

    2008-01-15

    The crystallographic growth, interfacial roughness, and magnetic properties of CoCrPt-SiO{sub 2} perpendicular magnetic recording media prepared on various types of Ru intermediate growth layers were systematically investigated based on high angle and omega offset x-ray diffraction scans, rocking curve scans, synchrotron radiation based grazing incidence reflectivity scans, and magneto-optical Kerr hysteresis loops. For samples that make use of one Ru growth layer, voltage bias applied on the Ru layer was seen to have two observable effects: (1) the dispersion in the Ru(00{center_dot}2) perpendicular texture increased, but that of the Co(00{center_dot}2) remained unchanged, leading to identical layered growth and (2) the in-plane a-lattice parameter of the Ru decreased leading to enhanced heteroepitaxy with the Co. There was no significant change in the Ru-Co interfacial roughness with changing the bias on the Ru layer. The bias effect can be used to optimize the design of the Ru intermediate layers. A scheme that makes use of two Ru growth layers consisting of a bottom Ru layer prepared under zero bias, which is inserted below a second Ru layer prepared under biased conditions, is shown to lead to significant benefits such as improved texture without affecting the magnetic properties. This is due to the different functional roles ascribed to each of the Ru growth layers.

  10. On-chip high density droplet-on-template (DOT) array

    NASA Astrophysics Data System (ADS)

    Kim, Jitae; Song, Simon

    2015-01-01

    In this report, we present a new method for generating a high-density (2D) droplet array using double-layered polydimethylsiloxane (PDMS) templates containing honeycomb microwells. Without external flow control, a droplet-on-template (DOT) was created by utilizing capillary forces associated with the interfacial tension between the aqueous and oil phases. The DOT process involved three simple steps: (1) vacuum-assisted filling of microwells; (2) excess water removal; and (3) covering the droplet array with oil. To demonstrate the concept of the DOT, we generated spherical water droplets 147, 191, 238, 326 and 405 μm in diameter from corresponding microwells with lengths of 200, 300, 400, 600 and 800 μm, respectively and a height of 76 μm (up to ~10,000 droplets on a template 25  ×  25 mm). Two important factors, including the aspect ratio (height-to-length ratio) of the microwell and the interfacial tension of the two phases, were investigated to understand how those factors affect the shape of the droplets (‘sphere’ or ‘dome’). All the droplets were spherical up to an aspect ratio of 0.55. The droplets were dome-shaped for aspect ratios above 0.82. For a 1 mM sodium dodecyl sulfate (SDS) solution, the use of mineral oil (which had the highest interfacial tension studied) produced spherical droplets, but dome-shaped droplets were produced by corn oil and oleic acid.

  11. Cross-linking of interfacial layers affects the salt and temperature stability of multilayered emulsions consisting of fish gelatin and sugar beet pectin.

    PubMed

    Zeeb, Benjamin; Fischer, Lutz; Weiss, Jochen

    2011-10-12

    This study assessed the stabilizing effect of enzymatic cross-linking on double-coated emulsions (beet pectin-fish gelatin). The beet pectin layer was cross-linked via ferulic acid groups using laccase (an enzyme that is known to catalyze the oxidation of phenolic groups). Fish gelatin-coated oil droplets (primary emulsion) were mixed at pH 3.5 to promote electrostatic deposition of the beet pectin molecules onto the surfaces of the oil droplets (secondary emulsion). Laccase was then added to promote cross-linking of the adsorbed beet pectin layer. Cross-linked pectin-coated oil droplets had similar or significantly better stability (p < 0.05) than oil droplets of primary or secondary emulsions to NaCl addition (0-500 mM), CaCl(2) addition (0-250 mM), and thermal processing (30-90 °C for 30 min). Freeze-thaw stability and creaming behavior of enzyme-treated, secondary emulsions after two cycles (-8 °C for 22 h; 25 °C for 2 h) were significantly improved (p < 0.05). These results may have important implications for food manufacturers that are in need of emulsions with improved physical stability, for example, emulsions used in frozen foods for sauces or dips.

  12. Effect of interfacial ion structuring on range and magnitude of electric double layer, hydration, and adhesive interactions between mica surfaces in 0.05-3 M Li⁺ and Cs⁺ electrolyte solutions.

    PubMed

    Baimpos, Theodoros; Shrestha, Buddha R; Raman, Sangeetha; Valtiner, Markus

    2014-04-22

    Ions and water structuring at charged-solid/electrolyte interfaces and forces arising from interfacial structuring in solutions above 100 mM concentrations dominate structure and functionality in many physiological, geological, and technological systems. In these concentrations, electrolyte structuring occurs within the range of molecular dimensions. Here, we quantitatively measure and describe electric double layer (EDL) and adhesive interactions at mica-interfaces in aqueous CsCl and LiCl solutions with concentrations ranging from 50 mM to 3 M. Complementarily, using atomic force microscopy and surface forces apparatus experiments we characterize concentration-dependent stark differences in the inner and outer EDL force profiles, and discuss differences between the used methods. From 50 mM to 1 M concentrations, interactions forces measured in CsCl-solutions exhibit strong hydration repulsions, but no diffuse EDL-repulsions beyond the Stern layer. In confinement the weakly hydrated Cs(+) ions condensate into the mica-lattice screening the entire surface charge within the Stern layer. In contrast, strongly hydrated Li(+) ions only partially compensate the surface charge within the Stern layer, leading to the formation of a diffuse outer double layer with DLVO behavior. Both LiCl and CsCl solutions exhibit oscillatory ion-hydration forces at surface separations from 2.2 nm to 4-8 Å. Below 4-8 Å the force profiles are dominated in both cases by forces originating from water and/or ion confinement at the solid/electrolyte/solid interface. Adhesive minima and their location vary strongly with the electrolyte and its concentration due to specific ion correlations across the interface, while dispersion forces between the surfaces are overpowered. Highly concentrated 3 M solutions exhibit solidification of the inner EDL structure and an unexpected formation of additional diffuse EDL forces with an increasing range, as recently measured in ionic liquids. Our results may

  13. White-light-exciting, layer-by-layer-assembled ZnCdHgSe quantum dots/polymerized ionic liquid hybrid film for highly sensitive photoelectrochemical immunosensing of neuron specific enolase.

    PubMed

    Yu, Xiangyang; Wang, Yanying; Chen, Xuemin; Wu, Kangbing; Chen, Danchao; Ma, Ming; Huang, Zhenjia; Wu, Wangze; Li, Chunya

    2015-04-21

    ZnCdHgSe quantum dots (QDs) functionalized with N-acetyl-l-cysteine were synthesized and characterized. Through layer-by-layer assembling, the ZnCdHgSe QDs was integrated with a polymerized 1-decyl-3-[3-pyrrole-1-yl-propyl]imidazolium tetrafluoroborate (PDPIT) ionic liquid film modified indium tin oxide (ITO) electrode to fabricated a photoelectrochemical interface for the immobilization of rabbit antihuman neuron specific enolase (anti-NSE). After being treated with glutaraldehyde vapor and bovine serum albumin successively, an anti-NSE/ZnCdHgSe QDs/PDPIT/ITO sensing platform was established. Simplely using a white-light LED as an excitation source, the immunoassay of neuron specific enolase (NSE) was achieved through monitoring the photocurrent variation. The polymerized ionic liquid film was demonstrated to be an important element to enhance the photocurrent response of ZnCdHgSe QDs. The anti-NSE/ZnCdHgSe QDs/PDPIT/ITO based immunosensor presents excellent performances in neuron specific enolase determination. The photocurrent variation before and after being interacted with NSE exhibits a good linear relationship with the logarithm of its concentration (log cNSE) in the range from 1.0 pg mL(-1) to 100 ng mL(-1). The limit of detection of this immunosensor is able to reach 0.2 pg mL(-1) (S/N = 3). The determination of NSE in clinical human sera was also demonstrated using anti-NSE/ZnCdHgSe QDs/PDPIT/ITO electrode. The results were found comparable with those obtained by using enzyme-linked immunosorbent assay method. PMID:25790014

  14. Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al2O3 using atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Cheng, Chih-Yi; Mao, Ming-Hua

    2016-08-01

    We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al2O3 thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al2O3 passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated and passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al2O3 protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.

  15. Bulk- and layer-heterojunction phototransistors based on poly [2-methoxy-5-(2′-ethylhexyloxy-p-phenylenevinylene)] and PbS quantum dot hybrids

    SciTech Connect

    Song, Xiaoxian; Zhang, Yating Wang, Ran; Cao, Mingxuan; Che, Yongli; Wang, Jianlong; Wang, Haiyan; Jin, Lufan; Ding, Xin; Zhang, Guizhong; Yao, Jianquan; Dai, Haitao

    2015-06-22

    The responsivity (R) of a thin film photodetector is proportional to the product of its photo-induced carrier density (n) and mobility (μ). However, when choosing between layer heterojunction (LH) and bulk heterojunction (BH) field-effect phototransistors (FEpTs), it is still unclear which of the two device structures is more conducive to photodetection. A comparison study is performed on the two structures based on polymer and PbS quantum dot hybrids. Both devices exhibit ambipolar behavior, with μ{sub E} ≈ μ{sub H} = 3.7 cm{sup 2} V{sup −1} s{sup −1} for BH-FEpTs and μ{sub H} = 36 cm{sup 2} V{sup −1} s{sup −1} and μ{sub E} = 52 cm{sup 2} V{sup −1} s{sup −1} for LH-FEpTs. Because of the improvements in μ and the channel order degree (α), the responsivity of LH-FEpTs is as high as 10{sup 1 }A/W, which is as much as two orders of magnitude higher than that of BH-FEpTs (10{sup −1}A/W) under the same conditions. Although the large area of the BH improves both the exciton separation degree (β) and n in the BH-FEpT, the lack of an effective transport mechanism becomes the main constraint on high device responsivity. Therefore, LH-FEpTs are better candidates for use as photo detectors, and a “three-high” principle of high α, β, and μ is found to be required for high responsivity.

  16. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    SciTech Connect

    Ulloa, J. M. Utrilla, A. D.; Guzman, A.; Hierro, A.

    2014-10-07

    Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5 nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

  17. Quantum dot-layer-encapsulated and phenyl-functionalized silica spheres for highly luminous, colour rendering, and stable white light-emitting diodes.

    PubMed

    Yoo, Hyein; Jang, Ho Seong; Lee, Kwangyeol; Woo, Kyoungja

    2015-08-14

    Although the quantum efficiencies of quantum dots (QDs) are approaching unity through advances in the synthesis of QD materials, their luminescence efficiencies after mixing with resin and thermal curing for white light-emitting diodes (LEDs) are seriously lowered because of aggregation and oxidation of QDs and poor adhesion of QDs to the resin. To overcome these problems, QD-layer-encapsulated and phenyl-functionalized silica (SQS(Ph)) spheres were synthesized and applied for white LEDs, whereby the QDs were homogeneously distributed at radial equidistance from the center and near the surface of approximately 100 nm-sized silica spheres and the surface was functionalized with phenylethyl groups. The inter-core distances of QDs were over ∼14 nm, which is over the limit (<10 nm) for Förster resonance energy transfer (FRET) that leads to photoluminescence (PL) reduction. This hierarchical nanostructure excludes a chance of FRET between QDs and provides the QDs a gradually refractive index matching environment, which yields ∼4-fold enhanced PL in SQS(Ph). More importantly, the SQS(Ph) acquired a highly adhesive property to silicone resin due to their phenyl functional group matching, which resulted in remarkably improved light extraction in white LEDs. When incorporated along with a yellow-emitting Y3Al5O12:Ce(3+) (YAG:Ce) phosphor and silicone resin on blue LED chips, the SQS(Ph) spheres presented significantly improved performance [luminous efficiency (LE) = 58.2 lm W(-1); colour rendering index Ra = 81.8; I/I0 = 0.98 after 60 h operation] than their original QDs (LE = 39.6 lm W(-1); Ra = 78.1; I/I0 = 0.91 after 60 h operation) under a forward bias current of 60 mA.

  18. HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

    NASA Astrophysics Data System (ADS)

    Kim, Hyoung-Sub; Ok, I.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Lee, Jack C.; Majhi, Prashant

    2008-09-01

    In this letter, we present our experimental results of HfO2-based n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on indium phosphide (InP) substrates using a thin germanium (Ge) interfacial passivation layer (IPL). We found that MOSCAPs on n-InP substrates showed good C-V characteristics such as a small capacitance equivalent thickness (14Å ), a small frequency dispersion (<10% and <200mV), and a low dielectric leakage current (˜5×10-4A/cm2 at Vg=1.5V), whereas MOSCAPs on p-InP exhibited poor characteristics, implying severe Fermi level pinning. It was also found that InP was more vulnerable to a high temperature process such that C-V curves showed a characteristic "bump" and inversion capacitance at relatively high frequencies. From n-channel MOSFETs on a semi-insulating InP substrate using Ge IPL, HfO2, and TaN gate electrodes, excellent electrical characteristics such as a large transconductance (9.3mS /mm) and large drain currents (12.3mA/mm at Vd=2V and Vg=Vth+2V) were achieved, which are comparable to other works.

  19. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

    PubMed

    Tang, Mingchu; Chen, Siming; Wu, Jiang; Jiang, Qi; Dorogan, Vitaliy G; Benamara, Mourad; Mazur, Yuriy I; Salamo, Gregory J; Seeds, Alwyn; Liu, Huiyun

    2014-05-19

    We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at ~1.27 μm with a threshold current density of 194 A/cm(2) and output power of ~77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers.

  20. Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer

    NASA Astrophysics Data System (ADS)

    Park, Chan-Rok; Ik Kim, Shin; Young Moon, Seon; You, Yil-Hwan; Hwan Seo, Jung; Baek, Seung-Hyub; Keun Kim, Seong; Kang, Chong-Yun; Kim, Jin-Sang; Hwang, Jin-Ha

    2015-07-01

    The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.

  1. Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces

    SciTech Connect

    Zhernokletov, D. M.; Dong, H.; Brennan, B.; Kim, J.; Yakimov, M.; Tokranov, V.; Oktyabrsky, S.; Wallace, R. M.

    2013-04-01

    An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

  2. Effect of graphene layer thickness and mechanical compliance on interfacial heat flow and thermal conduction in solid-liquid phase change materials.

    PubMed

    Warzoha, Ronald J; Fleischer, Amy S

    2014-08-13

    Solid-liquid phase change materials (PCMs) are attractive candidates for thermal energy storage and electronics cooling applications but have limited applicability in state-of-the-art technologies due to their low intrinsic thermal conductivities. Recent efforts to incorporate graphene and multilayer graphene into PCMs have led to the development of thermal energy storage materials with remarkable values of bulk thermal conductivity. However, the full potential of graphene as a filler material for the thermal enhancement of PCMs remains unrealized, largely due to an incomplete understanding of the physical mechanisms that govern thermal transport within graphene-based nanocomposites. In this work, we show that the number of graphene layers (n) within an individual graphene nanoparticle has a significant effect on the bulk thermal conductivity of an organic PCM. Results indicate that the bulk thermal conductivity of PCMs can be tuned by over an order of magnitude simply by adjusting the number of graphene layers (n) from n = 3 to 44. Using scanning electron microscopy in tandem with nanoscale analytical techniques, the physical mechanisms that govern heat flow within a graphene nanocomposite PCM are found to be nearly independent of the intrinsic thermal conductivity of the graphene nanoparticle itself and are instead found to be dependent on the mechanical compliance of the graphene nanoparticles. These findings are critical for the design and development of PCMs that are capable of cooling next-generation electronics and storing heat effectively in medium-to-large-scale energy systems, including solar-thermal power plants and building heating and cooling systems. PMID:24983698

  3. L{sub g} = 100 nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    SciTech Connect

    Koh, D. E-mail: Taewoo.Kim@sematech.org; Kwon, H. M.; Kim, T.-W. E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.

    2014-04-21

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond.

  4. Effect of ethylene glycol bis (propionitrile) ether (EGBE) on the performance and interfacial chemistry of lithium-rich layered oxide cathode

    NASA Astrophysics Data System (ADS)

    Hong, Pengbo; Xu, Mengqing; Zheng, Xiongwen; Zhu, Yunmin; Liao, Youhao; Xing, Lidan; Huang, Qiming; Wan, Huaping; Yang, Yongjun; Li, Weishan

    2016-10-01

    Ethylene glycol bis (propionitrile) ether (EGBE) is used as an electrolyte additive to improve the cycling stability and rate capability of Li/Li1.2Mn0.54Ni0.13Co0.13O2 cells at high operating voltage (4.8 V). After 150 cycles, cells with 1.0 wt% of EGBE containing electrolyte have remarkable cycling performance, 89.0% capacity retention; while the cells with baseline electrolyte only remain 67.4% capacity retention. Linear sweep voltammetry (LSV) and computation results demonstrate that EGBE preferably oxidizes on the cathode surface compared to the LiPF6/carbonate electrolyte. In order to further understand the effects of EGBE on Li1.2Mn0.54Ni0.13Co0.13O2 cathode upon cycling at high voltage, electrochemical behaviors and ex-situ surface analysis of Li1.2Mn0.54Ni0.13Co0.13O2 are investigated via electrochemical impedance spectroscopy (EIS), scanning electron spectroscopy (SEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and inductive coupled plasma spectroscopy (ICP-MS). The improved cycling performance can be attributed to more stable and robust surface layer yield via incorporation of EGBE, which mitigates the oxidation of electrolyte on the cathode electrode, and also inhibits the dissolution of bulk transition metal ions as well upon cycling at high voltage.

  5. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Liu, Zhi Hong

    2015-03-02

    The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.

  6. Functionalization enhancement on interfacial shear strength between graphene and polyethylene

    NASA Astrophysics Data System (ADS)

    Jin, Yikuang; Duan, Fangli; Mu, Xiaojing

    2016-11-01

    Pull-out processes were simulated to investigate the interfacial mechanical properties between the functionalized graphene sheet (FGS) and polyethylene (PE) matrix by using molecular dynamics simulation with ReaxFF reactive force field. The interfacial structure of polymer and the interfacial interaction in the equilibrium FGS/PE systems were also analyzed to reveal the enhancement mechanism of interfacial shear strength. We observed the insertion of functional groups into polymer layer in the equilibrium FGS/PE systems. During the pull-out process, some interfacial chains were attached on the FGS and pulled out from the polymer matrix. The behavior of these pulled out chains was further analyzed to clarify the different traction action of functional groups applied on them. The results show that the traction effect of functional groups on the pulled-out chains is agreement with their enhancement influence on the interfacial shear strength of the FGS/PE systems. They both are basically dominated by the size of functional groups, suggesting the enhancement mechanism of mechanical interlocking. However, interfacial binding strength also exhibits an obvious influence on the interfacial shear properties of the hybrid system. Our simulation show that geometric constrains at the interface is the principal contributor to the enhancement of interfacial shear strength in the FGS/PE systems, which could be further strengthened by the wrinkled morphology of graphene in experiments.

  7. Interfacial charge-induced polarization switching in Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} bi-layer

    SciTech Connect

    Kim, Yu Jin; Park, Min Hyuk; Jeon, Woojin; Kim, Han Joon; Moon, Taehwan; Lee, Young Hwan; Kim, Keum Do; Hyun, Seung Dam; Hwang, Cheol Seong

    2015-12-14

    Detailed polarization switching behavior of an Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} (AO/PZT) structure is examined by comparing the phenomenological thermodynamic model to the experimental polarization–voltage (P-V) results. Amorphous AO films with various thicknesses (2–10 nm) were deposited on the polycrystalline 150-nm-thick PZT film. The thermodynamic calculation showed that the transition from the ferroelectric-like state to the paraelectric-like state with increasing AO thickness occurs at ∼3 nm thickness. This paraelectric-like state should have exhibited a negative capacitance effect without permanent polarization switching if no other adverse effects are involved. However, experiments showed typical ferroelectric-like hysteresis loops where the coercive voltage increased with the increasing AO thickness, which could be explained by the carrier injection through the thin AO layer and trapping of the carriers at the AO/PZT interface. The fitting of the experimental P-V loops using the thermodynamic model considering the depolarization energy effect showed that trapped charge density was ∼±0.1 Cm{sup −2} and critical electric field at the Pt electrode/AO interface, at which the carrier transport occurs, was ∼±10 MV/cm irrespective of the AO thickness. Energy band model at each electrostatic state along the P-V loop was provided to elucidate correlation between macroscopic polarization and internal charge state of the stacked films.

  8. Vertical asymmetric double quantum dots

    NASA Astrophysics Data System (ADS)

    Roßbach, R.; Reischle, M.; Beirne, G. J.; Schweizer, H.; Jetter, M.; Michler, P.

    2007-01-01

    Two layers of differently sized self-assembled InP-quantum dots (QDs) separated by a GaInP spacer layer with varying thickness were grown by metal organic vapor phase epitaxy (MOVPE). Photoluminescence measurements of the QD ensembles and of individual asymmetric double QDS show coupling due to the tunnelling of carriers.

  9. Specific effects of Ca2+ ions and molecular structure of β-lactoglobulin interfacial layers that drive macroscopic foam stability† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c6sm00636a Click here for additional data file.

    PubMed Central

    Schulze-Zachau, Felix; Nagel, Eva; Engelhardt, Kathrin; Stoyanov, Stefan; Gochev, Georgi; Khristov, Khr.; Mileva, Elena; Exerowa, Dotchi; Miller, Reinhard; Peukert, Wolfgang

    2016-01-01

    β-Lactoglobulin (BLG) adsorption layers at air–water interfaces were studied in situ with vibrational sum-frequency generation (SFG), tensiometry, surface dilatational rheology and ellipsometry as a function of bulk Ca2+ concentration. The relation between the interfacial molecular structure of adsorbed BLG and the interactions with the supporting electrolyte is additionally addressed on higher length scales along the foam hierarchy – from the ubiquitous air–water interface through thin foam films to macroscopic foam. For concentrations <1 mM, a strong decrease in SFG intensity from O–H stretching bands and a slight increase in layer thickness and surface pressure are observed. A further increase in Ca2+ concentrations above 1 mM causes an apparent change in the polarity of aromatic C–H stretching vibrations from interfacial BLG which we associate to a charge reversal at the interface. Foam film measurements show formation of common black films at Ca2+ concentrations above 1 mM due to considerable decrease of the stabilizing electrostatic disjoining pressure. These observations also correlate with a minimum in macroscopic foam stability. For concentrations >30 mM Ca2+, micrographs of foam films show clear signatures of aggregates which tend to increase the stability of foam films. Here, the interfacial layers have a higher surface dilatational elasticity. In fact, macroscopic foams formed from BLG dilutions with high Ca2+ concentrations where aggregates and interfacial layers with higher elasticity are found, showed the highest stability with much smaller bubble sizes. PMID:27337699

  10. Interfacial insertion of a poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) layer between the poly(3-hexyl thiophene) semiconductor and cross-linked poly(vinyl alcohol) insulator layer in organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Cruz-Cruz, Isidro; Tavares, Ana C. B.; Reyes-Reyes, Marisol; López-Sandoval, Román; Hümmelgen, Ivo A.

    2014-02-01

    The role of a thin layer of conductive poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT : PSS), inserted between the gate dielectric and the active layer in poly(3-hexylthiophene)-based transistors was investigated. The devices were fabricated in the bottom-gate top-contact geometry by using cross-linked poly(vinyl alcohol) as the dielectric, whereas the PEDOT : PSS layer was prepared by using an aged aqueous dispersion with addition of different amounts of dimethyl sulfoxide (DMSO) as a secondary dopant. Under these conditions, both a significant reduction in the number of electrically active traps at the interface with the semiconductor and an improvement in the field-effect mobility were obtained, whereas the low power consumption was preserved. The threshold voltage was also displaced by approximately -1 V.

  11. Oxidation-resistant interfacial coatings for fiber-reinforced ceramic composites

    SciTech Connect

    Lara-Curzio, Edgar; More, Karren L.; Lee, Woo Y.

    1999-04-22

    A ceramic-matrix composite having a multilayered interfacial coating adapted to protect the reinforcing fibers from long-term oxidation, while allowing these to bridge the wake of advancing cracks in the matrix, is provided by selectively mismatching materials within adjacent layers of the interfacial coating, the materials having different coefficients of thermal expansion so that a low toughness interface region is created to promote crack deflection either within an interior layer of the mismatched interfacial coating or between adjacent layers of the mismatched interfacial coating.

  12. PbS Quantum-Dot Depleted Heterojunction Solar Cells Employing CdS Nanorod Arrays as the Electron Acceptor with Enhanced Efficiency.

    PubMed

    Yao, Xudong; Liu, Shangjing; Chang, Yajing; Li, Guopeng; Mi, Longfei; Wang, Xiaoming; Jiang, Yang

    2015-10-21

    Depleted heterojunction (DH) solar cells have shown great potential in power conversion. A 3-D DH structure was first designed and fabricated through a layer-by-layer spin-coating technique to increase the interfacial contact of p-type PbS quantum dots (QDs) and n-type CdS nanorod arrays. As a result, a decent power conversion efficiency of 4.78% in this structure was achieved, which is five times the efficiency of a planar heterojunction structure of a similar thickness. In the 3-D DH structure, n-type CdS nanorod arrays (NRs) were grown vertically as electron acceptors, on which p-type PbS quantum dots were deposited as absorbing materials in a layer-by-layer spin-coating fashion. The results are discussed in view of effective transportation of electrons through CdS NRs than the hopping transportation in large nanoparticle-based CdS film, the enlarged interfacial area, and shortened carrier diffusion distance.

  13. Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

    NASA Astrophysics Data System (ADS)

    Chaker, A.; Szkutnik, P. D.; Pointet, J.; Gonon, P.; Vallée, C.; Bsiesy, A.

    2016-08-01

    In this paper, TiO2 layers grown on RuO2 by atomic layer deposition (ALD) using tetrakis (dimethyla-mino) titanium (TDMAT) and either oxygen plasma or H2O as oxygen source were analyzed using X-ray diffraction (XRD), Raman spectroscopy, and depth-resolved X-ray Photoelectron spectroscopy (XPS). The main objective is to investigate the surface chemical reactions mechanisms and their influence on the TiO2 film properties. The experimental results using XRD show that ALD deposition using H2O leads to anatase TiO2 whereas a rutile TiO2 is obtained when oxygen-plasma is used as oxygen source. Depth-resolved XPS analysis allows to determine the reaction mechanisms at the RuO2 substrate surface after growth of thin TiO2 layers. Indeed, the XPS analysis shows that when H2O assisted ALD process is used, intermediate Ti2O3 layer is obtained and RuO2 is reduced into Ru as evidenced by high resolution transmission electron microscopy. In this case, there is no possibility to re-oxidize the Ru surface into RuO2 due to the weak oxidation character of H2O and an anatase TiO2 layer is therefore grown on Ti2O3. In contrast, when oxygen plasma is used in the ALD process, its strong oxidation character leads to the re-oxidation of the partially reduced RuO2 following the first Ti deposition step. Consequently, the RuO2 surface is regenerated, allowing the growth of rutile TiO2. A surface chemical reaction scheme is proposed that well accounts for the observed experimental results.

  14. Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

    NASA Astrophysics Data System (ADS)

    Nolph, C. A.; Kassim, J. K.; Floro, J. A.; Reinke, P.

    2013-08-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T < 160 °C leaves the Mn-clusters on the WL unchanged, while the Mn-islands on the Ge{105} facet undergo first a ripening process, followed by a volume gain which can be attributed to the onset of intermixing with Ge. This development is supported by the statistical analysis of island volume, size and size distribution. Increasing the annealing temperature to 220° and finally 375 ° C leads to a rapid increase in the Mn-surface diffusion, as evidenced by the formation of larger, nanometer size clusters, which are identified as germanide Mn5Ge3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and

  15. Addition of Mn to Ge quantum dot surfaces--interaction with the Ge QD {105} facet and the Ge(001) wetting layer.

    PubMed

    Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

    2013-08-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T < 160 °C leaves the Mn-clusters on the WL unchanged, while the Mn-islands on the Ge{105} facet undergo first a ripening process, followed by a volume gain which can be attributed to the onset of intermixing with Ge. This development is supported by the statistical analysis of island volume, size and size distribution. Increasing the annealing temperature to 220° and finally 375 ° C leads to a rapid increase in the Mn-surface diffusion, as evidenced by the formation of larger, nanometer size clusters, which are identified as germanide Mn5Ge3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de

  16. Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell.

    PubMed

    Li, Senlin; Bi, Jingfeng; Li, Mingyang; Yang, Meijia; Song, Minghui; Liu, Guanzhou; Xiong, Weiping; Li, Yang; Fang, Yanyan; Chen, Changqing; Lin, Guijiang; Chen, Wenjun; Wu, Chaoyu; Wang, Duxiang

    2015-01-01

    The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

  17. Rheology of interfacial protein-polysaccharide composites

    NASA Astrophysics Data System (ADS)

    Fischer, P.

    2013-05-01

    The morphology and mechanical properties of protein adsorption layers can significantly be altered by the presence of surfactants, lipids, particles, other proteins, and polysaccharides. In food emulsions, polysaccharides are primarily considered as bulk thickener but can under appropriate environmental conditions stabilize or destabilize the protein adsorption layer and, thus, the entire emulsion system. Despite their ubiquitous usage as stabilization agent, relatively few investigations focus on the interfacial rheology of composite protein/polysaccharide adsorption layers. The manuscript provides a brief review on both main stabilization mechanisms, thermodynamic phase separation and electrostatic interaction and discusses the rheological response in light of the environmental conditions such as ionic strength and pH.

  18. Emulsions for interfacial filtration.

    SciTech Connect

    Grillet, Anne Mary; Bourdon, Christopher Jay; Souza, Caroline Ann; Welk, Margaret Ellen; Hartenberger, Joel David; Brooks, Carlton, F.

    2006-11-01

    We have investigated a novel emulsion interfacial filter that is applicable for a wide range of materials, from nano-particles to cells and bacteria. This technology uses the interface between the two immiscible phases as the active surface area for adsorption of targeted materials. We showed that emulsion interfaces can effectively collect and trap materials from aqueous solution. We tested two aqueous systems, a bovine serum albumin (BSA) solution and coal bed methane produced water (CBMPW). Using a pendant drop technique to monitor the interfacial tension, we demonstrated that materials in both samples were adsorbed to the liquid-liquid interface, and did not readily desorb. A prototype system was built to test the emulsion interfacial filter concept. For the BSA system, a protein assay showed a progressive decrease in the residual BSA concentration as the sample was processed. Based on the initial prototype operation, we propose an improved system design.

  19. TiO2 quantum dots as superb compact block layers for high-performance CH3NH3PbI3 perovskite solar cells with an efficiency of 16.97%

    NASA Astrophysics Data System (ADS)

    Tu, Yongguang; Wu, Jihuai; Zheng, Min; Huo, Jinghao; Zhou, Pei; Lan, Zhang; Lin, Jianming; Huang, Miaoliang

    2015-12-01

    A compact TiO2 layer is crucial to achieve high-efficiency perovskite solar cells. In this study, we developed a facile, low-cost and efficient method to fabricate a pinhole-free and ultrathin blocking layer based on highly crystallized TiO2 quantum dots (QDs) with an average diameter of 3.6 nm. The surface morphology of the blocking layer and the photoelectric performance of the perovskite solar cells were investigated by spin-coating with three different materials: colloidal TiO2 QDs, titanium precursor solution, and aqueous TiCl4. Among these three treatments, the perovskite solar cell based on the TiO2 QD compact layer offered the highest power conversion efficiency (PCE) of 16.97% with a photocurrent density of 22.48 mA cm-2, a photovoltage of 1.063 V and a fill factor of 0.71. The enhancement of PCE mainly stems from the small series resistance and the large shunt resistance of the TiO2 QD layer.A compact TiO2 layer is crucial to achieve high-efficiency perovskite solar cells. In this study, we developed a facile, low-cost and efficient method to fabricate a pinhole-free and ultrathin blocking layer based on highly crystallized TiO2 quantum dots (QDs) with an average diameter of 3.6 nm. The surface morphology of the blocking layer and the photoelectric performance of the perovskite solar cells were investigated by spin-coating with three different materials: colloidal TiO2 QDs, titanium precursor solution, and aqueous TiCl4. Among these three treatments, the perovskite solar cell based on the TiO2 QD compact layer offered the highest power conversion efficiency (PCE) of 16.97% with a photocurrent density of 22.48 mA cm-2, a photovoltage of 1.063 V and a fill factor of 0.71. The enhancement of PCE mainly stems from the small series resistance and the large shunt resistance of the TiO2 QD layer. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05563f

  20. Increasing optical density of single-layer multi-polymer bulk-heterojunction OPVs using CdSe(ZnS) core(shell) quantum dots

    NASA Astrophysics Data System (ADS)

    Bump, Buddy J.; Olson, Grant T.; Savage, Richard; Echols, Robert S.

    2014-10-01

    Photovoltaic technology has powerful implications from commercial and national security standpoints. Due to the high material cost of silicon solar devices, inexpensive and lightweight polymer based solar is desirable to meet the demand for decentralized electrical power production in traditionally "off-grid" areas. Using a blend of Poly(3-hexylthiophene- 2,5-diyl) (P3HT), Phenyl-C61-butyric acid methyl ester (PCBM), and the low band-gap polymer Poly[2,6-(4,4-bis-(2- ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b']dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT), we have fabricated devices with a wide spectral response and 3% power conversion efficiency in AM 1.5 conditions. Due to low absorptivity in the peak of the solar spectra (500nm), we have blended this previous polymer system with CdSe(ZnS) core (shell) quantum dots to improve absorption, and thus power conversion efficiencies. Devices were prepared with quantum dots having a peak absorbance at 560nm and an emission wavelength of 577nm, with device loading ranging from 0% to 2.7% by weight. The relationship between quantum dot concentration and device performance is discussed, along with the impact of quantum dot concentration on thermal resistance to morphology changes.

  1. Organic electrophosphorescence device having interfacial layers

    DOEpatents

    Choulis, Stelios A.; Mathai, Mathew; Choong, Vi-En; So, Franky

    2010-08-10

    Techniques are described for forming an organic light emitting diode device with improved device efficiency. Materials having at least one energy level that is similar to those of a phosphorescent light emitting material in the diode are incorporated into the device to directly inject holes or electrons to the light emitting material.

  2. Interfacial functionalization and engineering of nanoparticles

    NASA Astrophysics Data System (ADS)

    Song, Yang

    also of the metal elements in the nanoparticle cores, in contrast to the bulk-exchange counterparts where these distributions were homogeneous within the nanoparticles, as manifested in contact angle, UV--vis, XPS, and TEM measurements. More interestingly, the electrocatalytic performance of the Janus nanoparticles was markedly better than the bulk-exchange ones, suggesting that the segregated distribution of the polar ligands from the apolar ones might further facilitate charge transfer from Ag to Au in the nanoparticle cores, leading to additional improvement of the adsorption and reduction of oxygen. This interfacial protocol was then adopted to prepare trimetallic Ag AuPt Neapolitan nanoparticles by two sequential galvanic exchange reactions of 1-hexanethiolate-capped silver nanoparticles with gold(I)-thiomalic acid and platinum(II)-hexanethiolate complexes. As both reactions were confined to an interface, the Au and Pt elements were situated on two opposite poles of the original Ag nanoparticles, which was clearly manifested in elemental mapping of the nanoparticles, and consistent with the damping and red-shift of the nanoparticle surface plasmon resonance. As nanoscale analogs to conventional amphiphilic molecules, the resulting Janus nanoparticles were found to form oil-in-water micelle-like or water-in-oil reverse micelle-like superparticulate structures depending on the solvent media. These unique characteristics were exploited for the effective transfer of diverse guest nanoparticles between organic and water phase. The transfer of hydrophobic nanoparticles from organic to water media or water-soluble nanoparticles to the organic phase was evidenced by TEM, DLS, UV-Vis, and PL measurements. In particular, line scans based on EDS analysis showed that the vesicle-like structures consisted of multiple layers of the Janus nanoparticles, which encapsulated the guest nanoparticles in the cores. The results highlight the unique effectiveness of using Janus

  3. Layers

    NASA Astrophysics Data System (ADS)

    Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2014-09-01

    The temperature-dependent photoresponse characteristics of MnAl2S4 layers have been investigated, for the first time, by use of photocurrent (PC) spectroscopy. Three peaks were observed at all temperatures. The electronic origin of these peaks was associated with band-to-band transitions from the valence-band states Γ4( z), Γ5( x), and Γ5( y) to the conduction-band state Γ1( s). On the basis of the relationship between PC-peak energy and temperature, the optical band gap could be well expressed by the expression E g( T) = E g(0) - 2.80 × 10-4 T 2/(287 + T), where E g(0) was estimated to be 3.7920 eV, 3.7955 eV, and 3.8354 eV for the valence-band states Γ4( z), Γ5( x), and Γ5( y), respectively. Results from PC spectroscopy revealed the crystal-field and spin-orbit splitting were 3.5 meV and 39.9 meV. The gradual decrease of PC intensity with decreasing temperature can be explained on the basis of trapping centers associated with native defects in the MnAl2S4 layers. Plots of log J ph, the PC current density, against 1/ T, revealed a dominant trap level in the high-temperature region. By comparing PC and the Hall effect results, we confirmed that this trap level is a shallow donor 18.9 meV below the conduction band.

  4. Molecular dynamics studies of interfacial water at the alumina surface.

    SciTech Connect

    Argyris, Dr. Dimitrios; Ho, Thomas; Cole, David

    2011-01-01

    Interfacial water properties at the alumina surface were investigated via all-atom equilibrium molecular dynamics simulations at ambient temperature. Al-terminated and OH-terminated alumina surfaces were considered to assess the structural and dynamic behavior of the first few hydration layers in contact with the substrates. Density profiles suggest water layering up to {approx}10 {angstrom} from the solid substrate. Planar density distribution data indicate that water molecules in the first interfacial layer are organized in well-defined patterns dictated by the atomic terminations of the alumina surface. Interfacial water exhibits preferential orientation and delayed dynamics compared to bulk water. Water exhibits bulk-like behavior at distances greater than {approx}10 {angstrom} from the substrate. The formation of an extended hydrogen bond network within the first few hydration layers illustrates the significance of water?water interactions on the structural properties at the interface.

  5. Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation

    NASA Astrophysics Data System (ADS)

    Murakumo, Keisuke; Yamaoka, Yuya; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2016-04-01

    We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ∼1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.

  6. TiO2 quantum dots as superb compact block layers for high-performance CH3NH3PbI3 perovskite solar cells with an efficiency of 16.97.

    PubMed

    Tu, Yongguang; Wu, Jihuai; Zheng, Min; Huo, Jinghao; Zhou, Pei; Lan, Zhang; Lin, Jianming; Huang, Miaoliang

    2015-12-28

    A compact TiO(2) layer is crucial to achieve high-efficiency perovskite solar cells. In this study, we developed a facile, low-cost and efficient method to fabricate a pinhole-free and ultrathin blocking layer based on highly crystallized TiO(2) quantum dots (QDs) with an average diameter of 3.6 nm. The surface morphology of the blocking layer and the photoelectric performance of the perovskite solar cells were investigated by spin-coating with three different materials: colloidal TiO(2) QDs, titanium precursor solution, and aqueous TiCl(4). Among these three treatments, the perovskite solar cell based on the TiO(2) QD compact layer offered the highest power conversion efficiency (PCE) of 16.97% with a photocurrent density of 22.48 mA cm(-2), a photovoltage of 1.063 V and a fill factor of 0.71. The enhancement of PCE mainly stems from the small series resistance and the large shunt resistance of the TiO(2) QD layer.

  7. Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs{sub 1-x}Sb{sub x}/GaAs composite substrates

    SciTech Connect

    Tang, Dinghao; Kim, Yeongho Faleev, Nikolai; Honsberg, Christiana B.; Smith, David J.

    2015-09-07

    The structure-performance properties of single-layered and multi-layered InAs/GaAs{sub 1−x}Sb{sub x} quantum dot (QD) system, grown by molecular beam epitaxy on GaAs (001) substrates, have been investigated as a function of Sb concentration. Electron microscopy observations showed no significant crystalline defects for the single-layered InAs QDs (Sb 20%). X-ray diffraction analysis revealed that the increase of Sb concentration from 7.3% to 10.2% for the multi-layered QDs increased the strain relaxation from 0% to ∼23% and the dislocation density of GaAsSb layers went up to 3.6 × 10{sup 9 }cm{sup −2}. The peak energy of QD luminescence was red-shifted with increasing Sb concentration due to reduced strain inside QDs. Moreover, the carrier lifetime of the QDs was highly improved from 1.7 to 36.7 ns due to weak hole confinement as the Sb concentration was increased from 7.3% to 10.2%. These structures should be highly promising as the basis for photovoltaic solar-cell applications. Finally, the increased Sb concentration increased the thermal activation energy of electrons confined in the QDs from 163.7 to 206.8 meV, which was indicative of the improved thermal stability with Sb concentration.

  8. TiO2 quantum dots as superb compact block layers for high-performance CH3NH3PbI3 perovskite solar cells with an efficiency of 16.97.

    PubMed

    Tu, Yongguang; Wu, Jihuai; Zheng, Min; Huo, Jinghao; Zhou, Pei; Lan, Zhang; Lin, Jianming; Huang, Miaoliang

    2015-12-28

    A compact TiO(2) layer is crucial to achieve high-efficiency perovskite solar cells. In this study, we developed a facile, low-cost and efficient method to fabricate a pinhole-free and ultrathin blocking layer based on highly crystallized TiO(2) quantum dots (QDs) with an average diameter of 3.6 nm. The surface morphology of the blocking layer and the photoelectric performance of the perovskite solar cells were investigated by spin-coating with three different materials: colloidal TiO(2) QDs, titanium precursor solution, and aqueous TiCl(4). Among these three treatments, the perovskite solar cell based on the TiO(2) QD compact layer offered the highest power conversion efficiency (PCE) of 16.97% with a photocurrent density of 22.48 mA cm(-2), a photovoltage of 1.063 V and a fill factor of 0.71. The enhancement of PCE mainly stems from the small series resistance and the large shunt resistance of the TiO(2) QD layer. PMID:26585357

  9. Interfacial Symmetry Control of Emergent Ferromagnetism

    NASA Astrophysics Data System (ADS)

    Grutter, Alexander; Borchers, Julie; Kirby, Brian; He, Chunyong; Arenholz, Elke; Vailionis, Arturas; Flint, Charles; Suzuki, Yuri

    Atomically precise complex oxide heterostructures provide model systems for the discovery of new emergent phenomena since their magnetism, structure and electronic properties are strongly coupled. Octahedral tilts and rotations have been shown to alter the magnetic properties of complex oxide heterostructures, but typically induce small, gradual magnetic changes. Here, we demonstrate sharp switching between ferromagnetic and antiferromagnetic order at the emergent ferromagnetic interfaces of CaRuO3/CaMnO3 superlattices. Through synchrotron X-ray diffraction and neutron reflectometry, we show that octahedral distortions in superlattices with an odd number of CaMnO3 unit cells in each layer are symmetry mismatched across the interface. In this case, the rotation symmetry switches across the interface, reducing orbital overlap, suppressing charge transfer from Ru to Mn, and disrupting the interfacial double exchange. This disruption switches half of the interfaces from ferromagnetic to antiferromagnetic and lowers the saturation magnetic of the superlattice from 1.0 to 0.5 μB/interfacial Mn. By targeting a purely interfacial emergent magnetic system, we achieve drastic alterations to the magnetic ground state with extremely small changes in layer thickness.

  10. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    DOEpatents

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  11. Design principles of interfacial thermal conductance

    NASA Astrophysics Data System (ADS)

    Polanco, Carlos; Rastgarkafshgarkolaei, Rouzbeh; Zhang, Jingjie; Le, Nam; Norris, Pamela; Ghosh, Avik

    We explore fundamental principles to design the thermal conductance across solid interfaces by changing the composition and disorder of an intermediate matching layer. In absence of phonon-phonon interactions, the layer addition involves two competing effects that influence the conductance. The layer can act as an impedance matching 'bridge' to increase the mode-averaged phonon transmission. However, it also reduces the relevant modes that conserve their momenta transverse to the interface, so that the net result depends on features such as the overlap of conserving modes and the dispersivity of the transverse subbands. Moving into the interacting anharmonic regime, we find that the added layer aids conductance when the decreased resistances at the contact-layer boundaries compensate for the layer resistance. In fact, we show that the maximum conductance corresponds to an exact matching of the two separate contact-layer resistances. For instance, if we vary just the atomic mass across layers, then maximum conductance happens when the intervening layer mass is the geometric mean of the contact masses. We conjecture that the best interfacial layer is one that is compositionally graded into many geometric means - in other words, an exponential variation in thermal impedance.

  12. High-Throughput Screening and Optimization of Binary Quantum Dots Cosensitized Solar Cell.

    PubMed

    Yuan, Ding; Xiao, Lina; Luo, Jianheng; Luo, Yanhong; Meng, Qingbo; Mao, Bing-Wei; Zhan, Dongping

    2016-07-20

    Quantum dots (QDs) are considered as the alternative of dye sensitizers for solar cells. However, interfacial construction and evaluation of photocatalytic nanomaterials still remains challenge through the conventional methodology involving demo devices. We propose here a high-throughput screening and optimizing method based on combinatorial chemistry and scanning electrochemical microscopy (SECM). A homogeneous TiO2 catalyst layer is coated on a FTO substrate, which is then covered by a dark mask to expose the photocatalyst array. On each photocatalyst spot, different successive ionic layer adsorption and reaction (SILAR) processes are performed by a programmed solution dispenser to load the binary PbxCd1-xS QDs sensitizers. An optical fiber is employed as the scanning tip of SECM, and the photocatalytic current is recorded during the imaging experiment, through which the optimized technical parameters are figured out. To verify the validity of the combinatorial SECM imaging results, the controlled trials are performed with the corresponding photovoltaic demo devices. The harmonious accordance proved that the methodology based on combinatorial chemistry and SECM is valuable for the interfacial construction, high-throughput screening, and optimization of QDSSCs. Furthermore, the PbxCd1-xS/CdS QDs cosensitized solar cell optimized by SECM achieves a short circuit current density of 24.47 mA/cm(2), an open circuit potential of 421 mV, a fill factor of 0.52, and a photovoltaic conversion efficiency of 5.33%. PMID:27355523

  13. Estimating interfacial thermal conductivity in metamaterials through heat flux mapping

    SciTech Connect

    Canbazoglu, Fatih M.; Vemuri, Krishna P.; Bandaru, Prabhakar R.

    2015-04-06

    The variability of the thickness as well as the thermal conductivity of interfaces in composites may significantly influence thermal transport characteristics and the notion of a metamaterial as an effective medium. The consequent modulations of the heat flux passage are analytically and experimentally examined through a non-contact methodology using radiative imaging, on a model anisotropic thermal metamaterial. It was indicated that a lower Al layer/silver interfacial epoxy ratio of ∼25 compared to that of a Al layer/alumina interfacial epoxy (of ∼39) contributes to a smaller deviation of the heat flux bending angle.

  14. Interfacial solvation thermodynamics.

    PubMed

    Ben-Amotz, Dor

    2016-10-19

    Previous studies have reached conflicting conclusions regarding the interplay of cavity formation, polarizability, desolvation, and surface capillary waves in driving the interfacial adsorptions of ions and molecules at air-water interfaces. Here we revisit these questions by combining exact potential distribution results with linear response theory and other physically motivated approximations. The results highlight both exact and approximate compensation relations pertaining to direct (solute-solvent) and indirect (solvent-solvent) contributions to adsorption thermodynamics, of relevance to solvation at air-water interfaces, as well as a broader class of processes linked to the mean force potential between ions, molecules, nanoparticles, proteins, and biological assemblies. PMID:27545849

  15. Interfacial solvation thermodynamics

    NASA Astrophysics Data System (ADS)

    Ben-Amotz, Dor

    2016-10-01

    Previous studies have reached conflicting conclusions regarding the interplay of cavity formation, polarizability, desolvation, and surface capillary waves in driving the interfacial adsorptions of ions and molecules at air-water interfaces. Here we revisit these questions by combining exact potential distribution results with linear response theory and other physically motivated approximations. The results highlight both exact and approximate compensation relations pertaining to direct (solute-solvent) and indirect (solvent-solvent) contributions to adsorption thermodynamics, of relevance to solvation at air-water interfaces, as well as a broader class of processes linked to the mean force potential between ions, molecules, nanoparticles, proteins, and biological assemblies.

  16. Roles of interfacial reaction on mechanical properties of solder interfaces

    NASA Astrophysics Data System (ADS)

    Liu, Pilin

    This study investigated roles of interfacial reaction in fracture and fatigue of solder interconnects. The interfacial reaction phases in the as-reflowed and after aging were examined by cross-sectional transmission electron microscopy (TEM) while interfacial mechanical properties were determined from a flexural peel fracture mechanics technique. Because of their widespread uses in microelectronic packaging, SnPb solder interfaces, and Bi-containing Pb-free solder interfaces were chosen as the subjects of this study. In the interfacial reaction study, we observed a complicated micro structural evolution during solid-state aging of electroless-Ni(P)/SnPb solder interconnects. In as-reflowed condition, the interfacial reaction produced Ni3Sn 4 and P-rich layers. Following overaging, the interfacial microstructure degenerated into a complex multilayer structure consisting of multiple layers of Ni-Sn compounds and transformed Ni-P phases. In SnPb solder interfacial system, fatigue study showed that the overaging of the high P electroless Ni-P/SnPb interconnects resulted in a sharp reduction in the fatigue resistance of the interface in the high crack growth rate regime. Fracture mechanism analysis indicated that the sharp drop in fatigue resistance was triggered by the brittle fracture of the Ni3Sn2 intermetallic phase developed at the overaged interface. The fatigue behavior was strongly dependent on P concentration in electroless Ni. Kirkendall voids were found in the interfacial region after aging, but they did not cause premature fracture of the solder interfaces. In Bi-containing solder interfacial system, we found that Bi segregated to the Cu-intermetallic interface during aging in SnBi/Cu interconnect. This caused serious embrittlement of Sn-Bi/Cu interface. Further aging induced numerous voids along the Cu3Sn/Cu interface. These interfacial voids were different from Kirkendall voids. Their formation was explained on basis of vacancy condensation at the

  17. Effect of nanoscale patterned interfacial roughness on interfacial toughness.

    SciTech Connect

    Zimmerman, Jonathan A.; Moody, Neville Reid; Mook, William M.; Kennedy, Marian S.; Bahr, David F.; Zhou, Xiao Wang; Reedy, Earl David, Jr.

    2007-09-01

    The performance and the reliability of many devices are controlled by interfaces between thin films. In this study we investigated the use of patterned, nanoscale interfacial roughness as a way to increase the apparent interfacial toughness of brittle, thin-film material systems. The experimental portion of the study measured the interfacial toughness of a number of interfaces with nanoscale roughness. This included a silicon interface with a rectangular-toothed pattern of 60-nm wide by 90-nm deep channels fabricated using nanoimprint lithography techniques. Detailed finite element simulations were used to investigate the nature of interfacial crack growth when the interface is patterned. These simulations examined how geometric and material parameter choices affect the apparent toughness. Atomistic simulations were also performed with the aim of identifying possible modifications to the interfacial separation models currently used in nanoscale, finite element fracture analyses. The fundamental nature of atomistic traction separation for mixed mode loadings was investigated.

  18. A direct investigation of photocharge transfer across monomolecular layer between C60 and CdS quantum dots by photoassisted conductive atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaohong; Liu, He; Zhang, Xingtang; Cheng, Gang; Wang, Shujie; Du, Zuliang

    2016-04-01

    The composite assembly of C60 and CdS Quantum Dots (QDs) on ITO substrate was prepared by Langmuir-Blodgett (LB) technique using arachic acid (AA), stearic acid (SA) and octadecanyl amine (OA) as additives. Photoassisted conductive atomic force microscopy was used to make point contact current-voltage (I-V) measurements on both the CdS QDs and the composite assembly of C60/CdS. The result make it clear that the CdS, C60/CdS assemblies deposited on ITO substrate showed linear characteristics and the current increased largely under illumination comparing with that in the dark. The coherent, nonresonant tunneling mechanism was used to explain the current occurrence. It is considered that the photoinduced carriers CdS QDs tunneled through alkyl chains increased the current rapidly.

  19. Fluorescent carbon dot (C-dot) nanoclusters.

    PubMed

    Wang, Guan; Pan, Xiaoyong; Gu, Liuqun; Ren, Wei; Cheng, Weiren; Kumar, Jatin N; Liu, Ye

    2014-09-19

    Fluorescent carbon dot (C-dot) nanoclusters composed of C-dot-loaded hollow silica spheres are obtained via the dehydration of mannose, which is adsorbed onto hollow silica spheres or poly(ethylene glycol)-graft-hollow silica spheres (PEG-g-hollow silica). The structure of C-dot nanoclusters are confirmed using 1H NMR, FTIR, TEM and TGA. C-dot nanoclusters show a redshifted fluorescence emission with an increased excitation wavelength. Passivation with PEG diamines improve the quantum yields to ∼2%. Confocal laser scanning microscopy (CLSM) results reflect the fact that C-dot nanoclusters can provide good cytoplasm imaging of live Hep G2 cells and live MCF-7 cells, and the imaging obtained is brighter and more even than those from free C-dots. With their combination of good photostability and low cytotoxicity, C-dot nanoclusters are promising for the production of higher quality bioimaging.

  20. Interfacial engineering for silica nanocapsules.

    PubMed

    Wibowo, David; Hui, Yue; Middelberg, Anton P J; Zhao, Chun-Xia

    2016-10-01

    Silica nanocapsules have attracted significant interest due to their core-shell hierarchical structure. The core domain allows the encapsulation of various functional components such as drugs, fluorescent and magnetic nanoparticles for applications in drug delivery, imaging and sensing, and the silica shell with its unique properties including biocompatibility, chemical and physical stability, and surface-chemistry tailorability provides a protection layer for the encapsulated cargo. Therefore, significant effort has been directed to synthesize silica nanocapsules with engineered properties, including size, composition and surface functionality, for various applications. This review provides a comprehensive overview of emerging methods for the manufacture of silica nanocapsules, with a special emphasis on different interfacial engineering strategies. The review starts with an introduction of various manufacturing approaches of silica nanocapsules highlighting surface engineering of the core template nanomaterials (solid nanoparticles, liquid droplets, and gas bubbles) using chemicals or biomolecules which are able to direct nucleation and growth of silica at the boundary of two-phase interfaces (solid-liquid, liquid-liquid, and gas-liquid). Next, surface functionalization of silica nanocapsules is presented. Furthermore, strategies and challenges of encapsulating active molecules (pre-loading and post-loading approaches) in these capsular systems are critically discussed. Finally, applications of silica nanocapsules in controlled release, imaging, and theranostics are reviewed. PMID:27522646

  1. Surface and interfacial creases in a bilayer tubular soft tissue.

    PubMed

    Razavi, Mir Jalil; Pidaparti, Ramana; Wang, Xianqiao

    2016-08-01

    Surface and interfacial creases induced by biological growth are common types of instability in soft biological tissues. This study focuses on the criteria for the onset of surface and interfacial creases as well as their morphological evolution in a growing bilayer soft tube within a confined environment. Critical growth ratios for triggering surface and interfacial creases are investigated both analytically and numerically. Analytical interpretations provide preliminary insights into critical stretches and growth ratios for the onset of instability and formation of both surface and interfacial creases. However, the analytical approach cannot predict the evolution pattern of the model after instability; therefore nonlinear finite element simulations are carried out to replicate the poststability morphological patterns of the structure. Analytical and computational simulation results demonstrate that the initial geometry, growth ratio, and shear modulus ratio of the layers are the most influential factors to control surface and interfacial crease formation in this soft tubular bilayer. The competition between the stretch ratios in the free and interfacial surfaces is one of the key driving factors to determine the location of the first crease initiation. These findings may provide some fundamental understanding in the growth modeling of tubular biological tissues such as esophagi and airways as well as offering useful clues into normal and pathological functions of these tissues. PMID:27627333

  2. Surface and interfacial creases in a bilayer tubular soft tissue

    NASA Astrophysics Data System (ADS)

    Razavi, Mir Jalil; Pidaparti, Ramana; Wang, Xianqiao

    2016-08-01

    Surface and interfacial creases induced by biological growth are common types of instability in soft biological tissues. This study focuses on the criteria for the onset of surface and interfacial creases as well as their morphological evolution in a growing bilayer soft tube within a confined environment. Critical growth ratios for triggering surface and interfacial creases are investigated both analytically and numerically. Analytical interpretations provide preliminary insights into critical stretches and growth ratios for the onset of instability and formation of both surface and interfacial creases. However, the analytical approach cannot predict the evolution pattern of the model after instability; therefore nonlinear finite element simulations are carried out to replicate the poststability morphological patterns of the structure. Analytical and computational simulation results demonstrate that the initial geometry, growth ratio, and shear modulus ratio of the layers are the most influential factors to control surface and interfacial crease formation in this soft tubular bilayer. The competition between the stretch ratios in the free and interfacial surfaces is one of the key driving factors to determine the location of the first crease initiation. These findings may provide some fundamental understanding in the growth modeling of tubular biological tissues such as esophagi and airways as well as offering useful clues into normal and pathological functions of these tissues.

  3. Surface and interfacial creases in a bilayer tubular soft tissue.

    PubMed

    Razavi, Mir Jalil; Pidaparti, Ramana; Wang, Xianqiao

    2016-08-01

    Surface and interfacial creases induced by biological growth are common types of instability in soft biological tissues. This study focuses on the criteria for the onset of surface and interfacial creases as well as their morphological evolution in a growing bilayer soft tube within a confined environment. Critical growth ratios for triggering surface and interfacial creases are investigated both analytically and numerically. Analytical interpretations provide preliminary insights into critical stretches and growth ratios for the onset of instability and formation of both surface and interfacial creases. However, the analytical approach cannot predict the evolution pattern of the model after instability; therefore nonlinear finite element simulations are carried out to replicate the poststability morphological patterns of the structure. Analytical and computational simulation results demonstrate that the initial geometry, growth ratio, and shear modulus ratio of the layers are the most influential factors to control surface and interfacial crease formation in this soft tubular bilayer. The competition between the stretch ratios in the free and interfacial surfaces is one of the key driving factors to determine the location of the first crease initiation. These findings may provide some fundamental understanding in the growth modeling of tubular biological tissues such as esophagi and airways as well as offering useful clues into normal and pathological functions of these tissues.

  4. More About Measuring Interfacial Tension Between Liquids

    NASA Technical Reports Server (NTRS)

    Rashidnia, Nasser; Balasubramaniam, R.; Del Signore, David M.

    1995-01-01

    Report presents additional discussion of technique for measuring interfacial tension between two immiscible liquids. Technique described in "Measuring Interfacial Tension Between Immiscible Liquids" (LEW-15855).

  5. Interfacial models of nerve fiber cytoskeleton.

    PubMed Central

    Malev, V V; Gromov, D B; Komissarchik YaYu; Brudnaya, M S

    1992-01-01

    A new approach, basing on a resemblance between cytoskeleton structures associated with plasma membranes and interfacial layers of coexisting phases, is proposed. In particular, a lattice model, similar to those of the theory of surface properties of pure liquids and nonelectrolyte solutions (Ono, S., and S. Kondo. 1960. Handbuch der Physik.), has been developed to describe nerve fiber cytoskeleton. The preliminary consideration of the model shows the existence of submembrane cytoskeleton having increased peripheral densities of microtubules (compared with the bulk density) which is in qualitative agreement with the data in literature. Some additional possibilities of the approach proposed are briefly discussed. Images FIGURE 2 FIGURE 3 FIGURE 4 PMID:1420929

  6. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    NASA Astrophysics Data System (ADS)

    Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen

    2016-02-01

    We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5-90 nm), the SiO2 thickness (3-4 nm), and as well the SiGe-shell thickness (2-15 nm) has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS) devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5) in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge) MOS nanoelectronic and nanophotonic applications.

  7. Interfacial chemistry and structure in ceramic composites

    SciTech Connect

    Jones, R.H.; Saenz, N.T.; Schilling, C.H.

    1990-09-01

    The interfacial chemistry and structure of ceramic matrix composites (CMCs) play a major role in the properties of these materials. Fiber-matrix interfaces chemistries are vitally important in the fracture strength, fracture toughness, and fracture resistance of ceramic composites because they influence fiber loading and fiber pullout. Elevated-temperature properties are also linked to the interfacial characteristics through the chemical stability of the interface in corrosive environments and the creep/pullout behavior of the interface. Physical properties such as electrical and thermal conductivity are also dependent on the interface. Fiber-matrix interfaces containing a 1-{mu}m-thick multilayered interface with amorphous and graphitic C to a 1-nm-thick SiO{sub 2} layer can result from sintering operations for some composite systems. Fibers coated with C, BN, C/BC/BN, and Si are also used to produce controlled interface chemistries and structures. Growth interfaces within the matrix resulting from processing of CMCs can also be crucial to the behavior of these materials. Evaluation of the interfacial chemistry and structure of CMCs requires the use of a variety of analytical tools, including optical microscopy, scanning electron microscopy, Auger electron spectroscopy, and transmission electron microscopy coupled with energy dispersive x-ray analysis. A review of the interfacial chemistry and structure of SiC whisker- and fiber-reinforced Si{sub 3}N{sub 4} and SiC/SiC materials is presented. Where possible, correlations with fracture properties and high-temperature stability are made. 94 refs., 10 figs.

  8. Some Aspects of Interfacial Phenomena in Steelmaking and Refining

    NASA Astrophysics Data System (ADS)

    Wang, L. J.; Viswanathan, N. N.; Muhmood, L.; Kapilashrami, E.; Seetharaman, S.

    2016-08-01

    Unique experiments were designed to study the surface phenomena in steelmaking reactions. The concept of surface sulfide capacities and an understanding of the surface accumulation of surface-active species, based on experimental results, are presented. In order to understand the flow phenomenon at slag/metal interface, experiments were designed to measure the interfacial velocity of S on the surface of an iron drop immersed in an aluminosilicate slag using the X-ray sessile drop method. The oscillation of the iron drop in the slag due to the change in the surface concentration of sulfur at the slag-metal interface was monitored by X-ray imaging. From the observations, the interfacial velocity of sulfur was evaluated. Similar experiments were performed to measure the interfacial velocity of oxygen at the interface as well as the impact of oxygen potential on the interfacial velocity of sulfur. The interfacial shear viscosity and the dilatational modulus were also evaluated. In a study of the wetting of alumina base by iron drop at constant oxygen pressure under isothermal condition, the contact angle was found to be decreased with the progress of the reaction leading to the formation of hercynite as an intermediate layer creating non-wetting conditions. In the case of silica substrate, an intermediate liquid fayalite layer was formed.

  9. Annealing-induced change in quantum dot chain formation mechanism

    NASA Astrophysics Data System (ADS)

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun

    2014-12-01

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  10. Annealing-induced change in quantum dot chain formation mechanism

    SciTech Connect

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun

    2014-12-15

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  11. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  12. Cold welding of organic light emitting diode: Interfacial and contact models

    NASA Astrophysics Data System (ADS)

    Asare, J.; Adeniji, S. A.; Oyewole, O. K.; Agyei-Tuffour, B.; Du, J.; Arthur, E.; Fashina, A. A.; Zebaze Kana, M. G.; Soboyejo, W. O.

    2016-06-01

    This paper presents the results of an analytical and computational study of the contacts and interfacial fracture associated with the cold welding of Organic Light Emitting diodes (OLEDs). The effects of impurities (within the possible interfaces) are explored for contacts and interfacial fracture between layers that are relevant to model OLEDs. The models are used to study the effects of adhesion, pressure, thin film layer thickness and dust particle modulus (between the contacting surfaces) on contact profiles around impurities between cold-welded thin films. The lift-off stage of thin films (during cold welding) is then modeled as an interfacial fracture process. A combination of adhesion and interfacial fracture theories is used to provide new insights for the design of improved contact and interfacial separation during cold welding. The implications of the results are discussed for the design and fabrication of cold welded OLED structures.

  13. Innovative qPCR using interfacial effects to enable low threshold cycle detection and inhibition relief

    PubMed Central

    Harshman, Dustin K.; Rao, Brianna M.; McLain, Jean E.; Watts, George S.; Yoon, Jeong-Yeol

    2015-01-01

    Molecular diagnostics offers quick access to information but fails to operate at a speed required for clinical decision-making. Our novel methodology, droplet-on-thermocouple silhouette real-time polymerase chain reaction (DOTS qPCR), uses interfacial effects for droplet actuation, inhibition relief, and amplification sensing. DOTS qPCR has sample-to-answer times as short as 3 min 30 s. In infective endocarditis diagnosis, DOTS qPCR demonstrates reproducibility, differentiation of antibiotic susceptibility, subpicogram limit of detection, and thermocycling speeds of up to 28 s/cycle in the presence of tissue contaminants. Langmuir and Gibbs adsorption isotherms are used to describe the decreasing interfacial tension upon amplification. Moreover, a log-linear relationship with low threshold cycles is presented for real-time quantification by imaging the droplet-on-thermocouple silhouette with a smartphone. DOTS qPCR resolves several limitations of commercially available real-time PCR systems, which rely on fluorescence detection, have substantially higher threshold cycles, and require expensive optical components and extensive sample preparation. Due to the advantages of low threshold cycle detection, we anticipate extending this technology to biological research applications such as single cell, single nucleus, and single DNA molecule analyses. Our work is the first demonstrated use of interfacial effects for sensing reaction progress, and it will enable point-of-care molecular diagnosis of infections. PMID:26601245

  14. Supersensitization of CdS quantum dots with a near-infrared organic dye: toward the design of panchromatic hybrid-sensitized solar cells.

    PubMed

    Choi, Hyunbong; Nicolaescu, Roxana; Paek, Sanghyun; Ko, Jaejung; Kamat, Prashant V

    2011-11-22

    The photoresponse of quantum dot solar cells (QDSCs) has been successfully extended to the near-IR (NIR) region by sensitizing nanostructured TiO(2)-CdS films with a squaraine dye (JK-216). CdS nanoparticles anchored on mesoscopic TiO(2) films obtained by successive ionic layer adsorption and reaction (SILAR) exhibit limited absorption below 500 nm with a net power conversion efficiency of ~1% when employed as a photoanode in QDSC. By depositing a thin barrier layer of Al(2)O(3), the TiO(2)-CdS films were further modified with a NIR absorbing squaraine dye. Quantum dot sensitized solar cells supersensitized with a squariand dye (JK-216) showed good stability during illumination with standard global AM 1.5 solar conditions, delivering a maximum overall power conversion efficiency (η) of 3.14%. Transient absorption and pulse radiolysis measurements provide further insight into the excited state interactions of squaraine dye with SiO(2), TiO(2), and TiO(2)/CdS/Al(2)O(3) films and interfacial electron transfer processes. The synergy of combining semiconductor quantum dots and NIR absorbing dye provides new opportunities to harvest photons from different regions of the solar spectrum.

  15. Charge-extraction strategies for colloidal quantum dot photovoltaics.

    PubMed

    Lan, Xinzheng; Masala, Silvia; Sargent, Edward H

    2014-03-01

    The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p- and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction.

  16. Interfacial Materials for Organic Solar Cells: Recent Advances and Perspectives

    PubMed Central

    Yin, Zhigang; Wei, Jiajun

    2016-01-01

    Organic solar cells (OSCs) have shown great promise as low‐cost photovoltaic devices for solar energy conversion over the past decade. Interfacial engineering provides a powerful strategy to enhance efficiency and stability of OSCs. With the rapid advances of interface layer materials and active layer materials, power conversion efficiencies (PCEs) of both single‐junction and tandem OSCs have exceeded a landmark value of 10%. This review summarizes the latest advances in interfacial layers for single‐junction and tandem OSCs. Electron or hole transporting materials, including metal oxides, polymers/small‐molecules, metals and metal salts/complexes, carbon‐based materials, organic‐inorganic hybrids/composites, and other emerging materials, are systemically presented as cathode and anode interface layers for high performance OSCs. Meanwhile, incorporating these electron‐transporting and hole‐transporting layer materials as building blocks, a variety of interconnecting layers for conventional or inverted tandem OSCs are comprehensively discussed, along with their functions to bridge the difference between adjacent subcells. By analyzing the structure–property relationships of various interfacial materials, the important design rules for such materials towards high efficiency and stable OSCs are highlighted. Finally, we present a brief summary as well as some perspectives to help researchers understand the current challenges and opportunities in this emerging area of research. PMID:27812480

  17. Oscillatory interfacial instability between miscible fluids

    NASA Astrophysics Data System (ADS)

    Shevtsova, Valentina; Gaponenko, Yuri; Mialdun, Aliaksandr; Torregrosa, Marita; Yasnou, Viktar

    Interfacial instabilities occurring between two fluids are of fundamental interest in fluid dynamics, biological systems and engineering applications such as liquid storage, solvent extraction, oil recovery and mixing. Horizontal vibrations applied to stratified layers of immiscible liquids may generate spatially periodic waving of the interface, stationary in the reference frame of the vibrated cell, referred to as a "frozen wave". We present experimental evidence that frozen wave instability exists between two ordinary miscible liquids of similar densities and viscosities. At the experiments and at the numerical model, two superimposed layers of ordinary liquids, water-alcohol of different concentrations, are placed in a closed cavity in a gravitationally stable configuration. The density and viscosity of these fluids are somewhat similar. Similar to the immiscible fluids this instability has a threshold. When the value of forcing is increased the amplitudes of perturbations grow continuously displaying a saw-tooth structure. The decrease of gravity drastically changes the structure of frozen waves.

  18. Understanding the electric field control of the electronic and optical properties of strongly-coupled multi-layered quantum dot molecules.

    PubMed

    Usman, Muhammad

    2015-10-21

    Strongly-coupled quantum dot molecules (QDMs) are widely employed in the design of a variety of optoelectronic, photovoltaic, and quantum information devices. An efficient and optimized performance of these devices demands engineering of the electronic and optical properties of the underlying QDMs. The application of electric fields offers a way to realise such a control over the QDM characteristics for a desired device operation. We performed multi-million-atom atomistic tight-binding calculations to study the influence of electric fields on the electron and hole wave function confinements and symmetries, the ground-state transition energies, the band-gap wavelengths, and the optical transition modes. Electrical fields parallel (Ep) and anti-parallel (Ea) to the growth direction were investigated to provide a comprehensive guide for understanding the electric field effects. The strain-induced asymmetry of the hybridized electron states is found to be weak and can be balanced by applying a small Ea electric field, of the order of 1 kV cm(-1). The strong interdot couplings completely break down at large electric fields, leading to single QD states confined at the opposite edges of the QDM. This mimics a transformation from a type-I band structure to a type-II band structure for the QDMs, which is a critical requirement for the design of intermediate-band solar cells (IBSCs). The analysis of the field-dependent ground-state transition energies reveals that the QDM can be operated both as a high dipole moment device by applying large electric fields and as a high polarizability device under the application of small electric field magnitudes. The quantum confined Stark effect (QCSE) red shifts the band-gap wavelength to 1.3 μm at the 15 kV cm(-1) electric field; however the reduced electron-hole wave function overlaps lead to a decrease in the interband optical transition strengths by roughly three orders of magnitude. The study of the polarisation-resolved optical

  19. Solid/liquid interfacial free energies in binary systems

    NASA Technical Reports Server (NTRS)

    Nason, D.; Tiller, W. A.

    1973-01-01

    Description of a semiquantitative technique for predicting the segregation characteristics of smooth interfaces between binary solid and liquid solutions in terms of readily available thermodynamic parameters of the bulk solutions. A lattice-liquid interfacial model and a pair-bonded regular solution model are employed in the treatment with an accommodation for liquid interfacial entropy. The method is used to calculate the interfacial segregation and the free energy of segregation for solid-liquid interfaces between binary solutions for the (111) boundary of fcc crystals. The zone of compositional transition across the interface is shown to be on the order of a few atomic layers in width, being moderately narrower for ideal solutions. The free energy of the segregated interface depends primarily upon the solid composition and the heats of fusion of the component atoms, the composition difference of the solutions, and the difference of the heats of mixing of the solutions.

  20. Quantitative morphological characterization of bicontinuous Pickering emulsions via interfacial curvatures

    NASA Astrophysics Data System (ADS)

    Reeves, Matthew; Stratford, Kevin; Thijssen, Job H. J.

    Bicontinuous Pickering emulsions (bijels) are a physically interesting class of soft materials with many potential applications including catalysis, microfluidics and tissue engineering. They are created by arresting the spinodal decomposition of a partially-miscible liquid with a (jammed) layer of interfacial colloids. Porosity $L$ (average interfacial separation) of the bijel is controlled by varying the radius ($r$) and volume fraction ($\\phi$) of the colloids ($L \\propto r/\\phi$). However, to optimize the bijel structure with respect to other parameters, e.g. quench rate, characterizing by $L$ alone is insufficient. Hence, we have used confocal microscopy and X-ray CT to characterize a range of bijels in terms of local and area-averaged interfacial curvatures. In addition, the curvatures of bijels have been monitored as a function of time, which has revealed an intriguing evolution up to 60 minutes after bijel formation, contrary to previous understanding.

  1. Study on the blocking effect of a quantum-dot TiO2 compact layer in dye-sensitized solar cells with ionic liquid electrolyte under low-intensity illumination

    NASA Astrophysics Data System (ADS)

    Zhai, Peng; Lee, Hyeonseok; Huang, Yu-Ting; Wei, Tzu-Chien; Feng, Shien-Ping

    2016-10-01

    In this study, ultrasmall and ultrafine TiO2 quantum dots (QDs) were prepared and used as a high-performance compact layer (CL) in dye-sensitized solar cells (DSCs). We systematically investigated the performance of TiO2 CL under both low-intensity light and indoor fluorescent light illumination and found that the efficiency of DSCs with the insertion of optimal TiO2 QDs-CL was increased up to 18.3% under indoor T5 fluorescent light illumination (7000 lux). We clarified the controversy over the blocking effect of TiO2 CL for the efficiency increment and confirmed that the TiO2 QDs-CL performed significantly better under low-intensity illumination due to the efficient suppression of electron recombination at the FTO/electrolyte interface. We, for the first time, demonstrate this potential for the application of the DSCs with TiO2 QDs-CL in the low-intensity light and indoor fluorescent light illumination.

  2. Magnetization reversal in asymmetric trilayer dots: effect of the interlayer magnetostatic coupling

    PubMed Central

    2014-01-01

    The spin structure and magnetization reversal in Co/insulator/Fe trilayer nanodots are investigated by micromagnetic simulations. The vortex and C-state are found and the magnetization reversal is dominated by the shape asymmetry of the dots, which is produced by cutting off a fraction of the circular dot. The vortex chirality is thus controlled by the magnetic field direction. On the other hand, the magnetostatic interaction between the top and bottom magnetic layers has interesting influence on the dot reversal process, where the magnetocrystalline anisotropy direction of the Co layer is allowed to vary within the layer plane. The combined effect of these two aspects is discussed on the base of dot coercivity, remanent magnetization, vortex nucleation and annihilation, and the bias of the Fe layer hysteresis loop. While leading to a new S-state in circle dots, the interlayer interaction facilitates the formation of C-state in asymmetric dots, which reduces the vortex nucleation field. The bias effect of all dots is decreased with the deviation of the Co layer easy axis from the field direction. Unlike the circle and semicircle dots, the field range of the vortex state in other asymmetric dots increases with the angle between the cutting direction and the Co layer anisotropy. Additionally, vortex ranges in less asymmetric dots even larger than that in the circle dots are evidenced unexpectedly. Therefore, the control of the vortex chirality and enhancement of the vortex range are found simultaneously. PMID:24589295

  3. Metamorphic quantum dots: Quite different nanostructures

    SciTech Connect

    Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.

    2010-09-15

    In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

  4. Dot-in-Well Quantum-Dot Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

    2008-01-01

    Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material

  5. Exploring interfacial ferromagnetism in manganite-based superlattices

    NASA Astrophysics Data System (ADS)

    Yi, Di; Flint, Charles; Suzuki, Yuri

    Heterointerface of complex oxides provides a rich playground to explore the emergent phenomena that are not found in bulk. In particular, emergent interfacial ferromagnetism has been successfully demonstrated in heterostructures composed of materials which are paramagnetic and antiferromagnetic in bulk. In our previous work, leakage of itinerant electrons from a paramagnetic metal to an antiferromagnetic insulator has been shown to give rise to interfacial ferromagnetism in CaMnO3 based superlattices. However interfacial ferromagnetism in insulating superlattices suggests a more complicated scenario. Therefore a thorough investigation of coupling between charge, lattice and spin degrees of freedom is necessary. In this talk, we focus on the NdNiO3 /CaMnO3 system. By choosing a paramagnetic layer that undergoes a metal-insulator transition, we can explore the role of electron itinerancy in interfacial ferromagnetism in the same sample to eliminate the inconsistencies that may originate from the deposition of multiple samples. We demonstrate that NdNiO3 exhibits a metal-insulator transition as a function of temperature, which can be tuned as a function of film thickness. We have also grown NdNiO3 /CaMnO3 heterostructures with excellent crystallinity. Preliminary transport measurements indicate that the presence of an adjacent CaMnO3 layer also affects the transport in NdNiO3 so that charge transfer from the itinerant layer into the adjacent antiferromagnetic insulating CaMnO3 is likely not the only contribution to interfacial ferromagnetism.

  6. Martensitic transformation of FeNi nanofilm induced by interfacial stress generated in FeNi/V nanomultilayered structure

    NASA Astrophysics Data System (ADS)

    Li, Wei; Liu, Ping; Zhang, Ke; Ma, Fengcang; Liu, Xinkuan; Chen, Xiaohong; He, Daihua

    2014-08-01

    FeNi/V nanomultilayered films with different V layer thicknesses were synthesized by magnetron sputtering. By adjusting the thickness of the V layer, different interfacial compressive stress were imposed on FeNi layers and the effect of interfacial stress on martensitic transformation of the FeNi film was investigated. Without insertion of V layers, the FeNi film exhibits a face-centered cubic (fcc) structure. With the thickness of V inserted layers up to 1.5 nm, under the coherent growth structure in FeNi/V nanomultilayered films, FeNi layers bear interfacial compressive stress due to the larger lattice parameter relative to V, which induces the martensitic transformation of the FeNi film. As the V layer thickness increases to 2.0 nm, V layers cannot keep the coherent growth structure with FeNi layers, leading to the disappearance of interfacial compressive stress and termination of the martensitic transformation in the FeNi film. The interfacial compressive stress-induced martensitic transformation of the FeNi nanofilm is verified through experiment. The method of imposing and modulating the interfacial stress through the epitaxial growth structure in the nanomultilayered films should be noticed and utilized.

  7. Martensitic transformation of FeNi nanofilm induced by interfacial stress generated in FeNi/V nanomultilayered structure

    PubMed Central

    2014-01-01

    FeNi/V nanomultilayered films with different V layer thicknesses were synthesized by magnetron sputtering. By adjusting the thickness of the V layer, different interfacial compressive stress were imposed on FeNi layers and the effect of interfacial stress on martensitic transformation of the FeNi film was investigated. Without insertion of V layers, the FeNi film exhibits a face-centered cubic (fcc) structure. With the thickness of V inserted layers up to 1.5 nm, under the coherent growth structure in FeNi/V nanomultilayered films, FeNi layers bear interfacial compressive stress due to the larger lattice parameter relative to V, which induces the martensitic transformation of the FeNi film. As the V layer thickness increases to 2.0 nm, V layers cannot keep the coherent growth structure with FeNi layers, leading to the disappearance of interfacial compressive stress and termination of the martensitic transformation in the FeNi film. The interfacial compressive stress-induced martensitic transformation of the FeNi nanofilm is verified through experiment. The method of imposing and modulating the interfacial stress through the epitaxial growth structure in the nanomultilayered films should be noticed and utilized. PMID:25232296

  8. Interfacial Nonlinear Dynamics, Phenomena, and Devices

    NASA Astrophysics Data System (ADS)

    Zhou, Ping

    The dynamics of an optical switch based on a dielectric -clad nonlinear film is presented. Two transition processes of the optical switching, from total internal reflection (TIR) to transmission (Tr) and from Tr to TIR, are investigated in theory as well as experiment. Nonlinear dynamic layered transfer matrix theory is developed to study the transition process from TIR to Tr at a nonlinear thin film due to the optically induced refractive index change. A simple theoretical model based on a dynamic nonlinear Fabry-Perot etalon is given for the analysis of the switching process from Tr to TIR. The quantitative analysis can be used for the design and optimization of an optical sensor protector and other devices. Experiments have been done on both the processes of TIR to Tr and Tr to TIR switching for visible as well as infrared wavelengths. A theory for the design of an optimal anti-reflection coating is proposed in order to aid the design and optimization of a nonlinear interfacial switch. Furthermore, a detailed study of the dynamic optical tunneling through the nonlinear interface indicates that the reflected wave would undergo an additional dynamic nonlinear phase shift which is a novel nonlinear interfacial phenomenon, first revealed by this study.

  9. Interfacial bonding and friction in SiC fiber/{beta}` SiAlON composites

    SciTech Connect

    Huang, C.M.; Zhu, D.; Xu, D.

    1994-12-31

    Interfacial mechanical properties of SiC fiber-reinforced, combustion synthesized {beta}`-SiAlON composites were studied by a fiber push-out technique. Interfacial debonding and parameters were studied in terms of embedded fiber length. Stable, progressive interfacial debonding prior to fiber frictional sliding was observed in specimens with large embedded fiber lengths. Linear, shear-lag and progressive debonding models were used in the analysis of interfacial parameters. The coefficient of friction and the residual radial stress estimated from the progressive debonding model was 0.25 and 158 MPa, respectively, as compared to 0.26 and 102 MPa, respectively obtained from the shear-lag model. The radial residual stress extracted from either model was reasonably close to that (125 MPa) calculated from the thermal expansion mismatch and cooling temperature range. An axial residual load (8.7 N) extracted from the progressive debonding model was compared well with that (6.7 N) obtained from a calculation based on thermal expansion mismatch. The interfacial fracture toughness was calculated to be 0.5 J/m{sup 2}. TEM interfacial characterization correlated with SEM observation of the interfacial debonding site, revealed that interfacial debonding was attributed to the weak physical bonding between the outermost carbon-rich layer of the SiC fiber and the matrix.

  10. Wear and interfacial transport of material

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1975-01-01

    Bonding across the interface for two solids in contact and the subsequent transfer of material from one surface to another is a direct result of the interfacial bonds being stronger than the cohesive bonds in either of the two solids. Surface tools such as LEED, Auger emission spectroscopy, field ion microscopy, and the atom probe are used to examine adhesive contacts and to determine the direction, nature, quantity of material transfer and properties of the solids which effect transfer and wear. The electronic nature, cohesive binding energies, surface structure, lattice disregistry and distribution of species in surface layers are all found to effect adhesion and transfer or transport for clean surfaces in solid state contact. The influence of adsorbed and reacted surface films from fractions of a monolayer to multilayer reactive films are considered. It is shown that even fractions of a monolayer of surface active species such as oxygen and sulfur can markedly inhibit adhesion and transport.

  11. InAsP quantum dot lasers grown by MOVPE.

    PubMed

    Karomi, Ivan; Smowton, Peter M; Shutts, Samuel; Krysa, Andrey B; Beanland, Richard

    2015-10-19

    We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.

  12. Numerical simulation of optical feedback on a quantum dot lasers

    SciTech Connect

    Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.

    2012-02-15

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  13. Interfacial rheology in complex flow

    NASA Astrophysics Data System (ADS)

    Martin, Jeffrey; Hudson, Steven

    2009-03-01

    Multiphase liquid systems are omnipresent in and essential to everyday life, e.g. foods, pharmaceutics, cosmetics, paints, oil recovery, etc. The morphology and stability of such systems depend on dynamic interfacial properties and processes. Typical methods utilized to measure such interfacial properties often employ drops that are much larger and flows that are much simpler than those encountered in typical processing applications. A microfluidic approach is utilized to measure dynamic structure and kinetics in multiphase systems with drop sizes comparable to those encountered in applications and flow complexity that is easily adjustable. The internal circulation and deformation of an aqueous droplet in clear mineral oil is measured using particle tracers and a detailed shape analysis, which is capable of measuring sub-micron deviations in drop shape. Deformation dynamics, detailed drop shape, interfacial tension, and internal circulation patterns and velocities are measured in Poiseuille and transient elongational flows. Flow kinematics are adjusted by varying the microchannel geometry, relative drop size, and drop height. The effects of confinement on interfacial dynamics and circulation patterns and velocities are also explored.

  14. Avalanche in adhesion. [interfacial separation between two Ni crystals

    NASA Technical Reports Server (NTRS)

    Smith, John R.; Bozzolo, Guillermo; Banerjea, Amitava; Ferrante, John

    1989-01-01

    Consider surfaces being brought into contact. It is proposed that atomic layers can collapse or avalanche together when the interfacial spacing falls below a critical distance. This causes a discontinuous drop in the adhesive binding energy. Avalanche can occur regardless of the stiffness of external supports. A simple understanding of the origin of this phenomenon is provided. A numerical calculation has been carried out for adhesion in Ni. A new wear mechanism due to avalanche is suggested.

  15. Relaxations and Interfacial Water Ordering at the Corundum (110) Surface

    SciTech Connect

    Catalano, Jeffrey G.

    2010-09-17

    In situ high resolution specular X-ray reflectivity measurements were used to examine relaxations and interfacial water ordering occurring at the corundum (110)-water interface. Sample preparation affected the resulting surface structure. Annealing in air at 1373 K produced a reconstructed surface formed through an apparently ordered aluminum vacancy. The effect of the reconstruction on in-plane periodicity was not determined. The remaining aluminum sites on the surface maintain full coordination by oxygen and the surface was coated with a layer of physically adsorbed water. Ordering of water further from the surface was not observed. Acid etching of this surface and preparing a surface through annealing at 723 K both produced an unreconstructed surface with identical relaxations and water ordering. Relaxations were confined primarily to the top {approx}4 {angstrom} of the surface and were dominated by an increased distribution width of the fully occupied surface aluminum site and outward relaxation of the oxygen surface functional groups. A layer of adsorbed water fully coated the surface and occurred in two distinct sites. Water above this showed signs of layering and indicated that water ordering extended 7-10 {angstrom} from the surface. Relaxations and the arrangement of interfacial water were nearly identical on both the unreconstructed corundum and isostructural hematite (110) surfaces. Comparison to corundum and hematite (012) suggests that the arrangement of interfacial water is primarily controlled by mineral surface structure.

  16. Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

    DOEpatents

    Forrest, Stephen R.; Wei, Guodan

    2010-07-06

    A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

  17. Dot-immunobinding assay (Dot-Iba).

    PubMed

    Surendran, Sumi; Mathai, Annamma; Radhakrishnan, Vishnampet Venkataraman

    2015-01-01

    Dot-immunobinding assay (Dot-Iba) is a simple and highly reproducible immunodiagnostic method. Antibody or antigen is dotted directly onto nitrocellulose membrane (NCM) discs. The diagnostic material to be checked can be incubated on this disc. Presence of antigen-antibody complex in NCM discs can be directly demonstrated with enzyme-conjugated antiglobulins and substrate. Development of a purple-pink colored, insoluble substrate product in the nitrocellulose membrane will be considered a positive result in the assay. This assay allows the processing of multiple specimens at a time and the entire operational procedures required only 4-6 h. Dot-IBA is rapid and the technical steps involved in the assay are much simpler than the other immunoassays such as enzyme-linked immunosorbent assay in detecting circulating antigen and antibody in clinical samples. The Dot-Iba showed an overall sensitivity of 60 % for tuberculous meningitis diagnosis and no false positive results were encountered. Hence this assay is highly specific for the diagnosis of paucibacillary diseases like extrapulmonary tuberculosis. Dot-Iba is best suited to laboratories in developing world where there are constraints in laboratory resources.

  18. Liquid metal actuation by electrical control of interfacial tension

    NASA Astrophysics Data System (ADS)

    Eaker, Collin B.; Dickey, Michael D.

    2016-09-01

    By combining metallic electrical conductivity with low viscosity, liquid metals and liquid metal alloys offer new and exciting opportunities to serve as reconfigurable components of electronic, microfluidic, and electromagnetic devices. Here, we review the physics and applications of techniques that utilize voltage to manipulate the interfacial tension of liquid metals; such techniques include electrocapillarity, continuous electrowetting, electrowetting-on-dielectric, and electrochemistry. These techniques lower the interfacial tension between liquid metals and a surrounding electrolyte by driving charged species (or in the case of electrochemistry, chemical species) to the interface. The techniques are useful for manipulating and actuating liquid metals at sub-mm length scales where interfacial forces dominate. We focus on metals and alloys that are liquid near or below room temperature (mercury, gallium, and gallium-based alloys). The review includes discussion of mercury—despite its toxicity—because it has been utilized in numerous applications and it offers a way of introducing several phenomena without the complications associated with the oxide layer that forms on gallium and its alloys. The review focuses on the advantages, applications, opportunities, challenges, and limitations of utilizing voltage to control interfacial tension as a method to manipulate liquid metals.

  19. Decimetric radio dot emissions

    NASA Astrophysics Data System (ADS)

    Mészárosová, H.; Karlický, M.; Sawant, H. S.; Fernandes, F. C. R.; Cecatto, J. R.; de Andrade, M. C.

    2008-11-01

    Context: We study a rare type of solar radio bursts called decimetric dot emissions. Aims: In the period 1999-2001, 20 events of decimetric dot emissions observed by the Brazilian Solar Spectroscope (BSS) in the frequency range 950-2640 MHz are investigated statistically and compared with radio fine structures of zebras and fibers. Methods: For the study of the spectral characteristics of the dot emissions we use specially developed Interactive Data Language (IDL) software called BSSView and basic statistical methods. Results: We have found that the dm dot emissions, contrary to the fine structures of the type IV bursts (i.e. zebras, fibers, lace bursts, spikes), are not superimposed on any background burst emission. In the radio spectrum, in most cases the dot emissions form chains that appear to be arranged in zebra patterns or fibers. Because some zebras and fibers, especially those observed with high time and high spectral resolutions, also show emission dots (but superimposed on the background burst emission), we compared the spectral parameters of the dot emissions with the dots being the fine structure of zebras and fibers. For both these dots, similar spectral characteristics were found. Some similarities of the dot emissions can be found also with the lace bursts and spikes. For some events the dot emissions show structural evolution from patterns resembling fibers to patterns resembling zebras and vice versa, or they evolve into fully chaotic patterns. Conclusions: For the first time, we present decimetric dot emissions that appear to be arranged in zebra patterns or fibers. We propose that these emissions are generated by the plasma emission mechanism at the locations in the solar atmosphere where the double resonance condition is fulfilled.

  20. Surface Exchange and Shape Transitions of PbSe Quantum Dots during Overgrowth

    SciTech Connect

    Abtin, L.; Springholz, G.; Holy, V.

    2006-12-31

    Epitaxial overgrowth of PbSe quantum dots is shown to drastically affect their shape and composition due to anion exchange reactions. As shown by scanning tunneling microscopy, for PbTe capping layers this results in a complete truncation of the dots. Introduction of EuTe into the cap layer leads to an effective suppression of the anion exchange process. This preserves the original dot pyramids and induces a large stress concentration on the surface which further alters the overgrowth process.

  1. Profiling the Local Seebeck Coefficient of InAs-GaAs Quantum Dots Using Scanning Thermoelectric Microscopy

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Hsiang; Walrath, Jenna; Huang, Simon; Goldman, Rachel

    2014-03-01

    Thermoelectric (TE) devices offer a method of recovering waste heat through solid state conversion of heat to electricity. However, the typical efficiencies of TE devices are 5-10% which constitutes a barrier to wide spread use. There have recently been a number of reports of an increase in the bulk thermopower due to nanostructuring. In addition to our recent report of enhanced thermopower for GaAs embedded with indium nanocrystals, a theoretical study by Mahan and Sofo suggested that the best thermoelectric materials have a delta function density of states. Quantum dots fit ideally into such a picture. To date, the influence of nanostructuring on the electronic LDOS and thermopower has been studied using spatially averaged measurements; a nanoscale investigation of the effects of nanostructures on thermopower has yet to be presented. To investigate the link between dimensionality and TE properties, we are examining structures ranging from QDs to bulk-like layers, comparing SThEM measurements of the local Seebeck coefficient, S, with STS measurements of the local density of states (LDOS). STM, STS, and SThEM performed on InAs quantum dots (QDs) grown on GaAs. SThEM reveals enhanced S-values near the QD edge; STS reveals band-bending at the QD/GaAs interface, suggesting that the S enhancement is due to interfacial charge accumulation.

  2. Mechanics of interfacial composite materials.

    PubMed

    Subramaniam, Anand Bala; Abkarian, Manouk; Mahadevan, L; Stone, Howard A

    2006-11-21

    Recent experiments and simulations have demonstrated that particle-covered fluid/fluid interfaces can exist in stable nonspherical shapes as a result of the steric jamming of the interfacially trapped particles. The jamming confers the interface with solidlike properties. We provide an experimental and theoretical characterization of the mechanical properties of these armored objects, with attention given to the two-dimensional granular state of the interface. Small inhomogeneous stresses produce a plastic response, while homogeneous stresses produce a weak elastic response. Shear-driven particle-scale rearrangements explain the basic threshold needed to obtain the near-perfect plastic deformation that is observed. Furthermore, the inhomogeneous stress state of the interface is exhibited experimentally by using surfactants to destabilize the particles on the surface. Since the interfacially trapped particles retain their individual characteristics, armored interfaces can be recognized as a kind of composite material with distinct chemical, structural, and mechanical properties.

  3. Height control of self-assembled quantum dots by strain engineering during capping

    SciTech Connect

    Grossi, D. F. Koenraad, P. M.; Smereka, P.; Keizer, J. G.; Ulloa, J. M.

    2014-10-06

    Strain engineering during the capping of III-V quantum dots has been explored as a means to control the height of strained self-assembled quantum dots. Results of Kinetic Monte Carlo simulations are confronted with cross-sectional Scanning Tunnel Microscopy (STM) measurements performed on InAs quantum dots grown by molecular beam epitaxy. We studied InAs quantum dots that are capped by In{sub x}Ga{sub (1−x)}As layers of different indium compositions. Both from our realistic 3D kinetic Monte Carlo simulations and the X-STM measurements on real samples, a trend in the height of the capped quantum dot is found as a function of the lattice mismatch between the quantum dot material and the capping layer. Results obtained on additional material combinations show a generic role of the elastic energy in the control of the quantum dot morphology by strain engineering during capping.

  4. Nitrogen-doped graphene oxide quantum dots as photocatalysts for overall water-splitting under visible light illumination.

    PubMed

    Yeh, Te-Fu; Teng, Chiao-Yi; Chen, Shean-Jen; Teng, Hsisheng

    2014-05-28

    Nitrogen-doped graphene oxide quantum dots exhibit both p- and n-type conductivities and catalyze overall water-splitting under visible-light irradiation. The quantum dots contain p-n type photochemical diodes, in which the carbon sp(2) clusters serve as the interfacial junction. The active sites for H2 and O2 evolution are the p- and n-domains, respectively, and the reaction mimics biological photosynthesis.

  5. Interfacial stress transfer in a graphene nanosheet toughened hydroxyapatite composite

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Zhang, X. G.; Chen, Y.; Su, J. N.; Liu, W. W.; Zhang, T. H.; Qi, F.; Wang, Y. G.

    2014-10-01

    In recent years, graphene has emerged as potential reinforcing nanofiller in the composites for structural engineering due to its extraordinary high elastic modulus and mechanical strength. As recognized, the transfer of stress from a low modulus matrix to a high-modulus reinforcing graphene and the interfacial behavior at a graphene-matrix interface is the fundamental issue in these composites. In the case of graphene nanosheet (GNS) reinforced hydroxyapatite (HA) composite, this research presented analytical models and simulated that the number of graphene layers of GNSs has little effect on the maximum axial stress (˜0.35 GPa) and the maximum shear stress (˜0.14 GPa) at a GNS-HA interface, and the energy dissipation by GNS pull-out decreases with increasing the number of graphene layers due to weak bonding between them. Also, GNS-HA interfacial delamination and/or GNS rupture were also indentified to be the two key failure mechanisms. The computed results are expected to facilitate a better understanding of the interfacial behavior at a GNS-ceramic interface and to achieve tough ceramics reinforced with GNSs.

  6. Probing Interfacial Processes on Graphene Surface by Mass Detection

    NASA Astrophysics Data System (ADS)

    Kakenov, Nurbek; Kocabas, Coskun

    2013-03-01

    In this work we studied the mass density of graphene, probed interfacial processes on graphene surface and examined the formation of graphene oxide by mass detection. The graphene layers were synthesized by chemical vapor deposition method on copper foils and transfer-printed on a quartz crystal microbalance (QCM). The mass density of single layer graphene was measured by investigating the mechanical resonance of the QCM. Moreover, we extended the developed technique to probe the binding dynamics of proteins on the surface of graphene, were able to obtain nonspecific binding constant of BSA protein of graphene surface in aqueous solution. The time trace of resonance signal showed that the BSA molecules rapidly saturated by filling the available binding sites on graphene surface. Furthermore, we monitored oxidation of graphene surface under oxygen plasma by tracing the changes of interfacial mass of the graphene controlled by the shifts in Raman spectra. Three regimes were observed the formation of graphene oxide which increases the interfacial mass, the release of carbon dioxide and the removal of small graphene/graphene oxide flakes. Scientific and Technological Research Council of Turkey (TUBITAK) grant no. 110T304, 109T209, Marie Curie International Reintegration Grant (IRG) grant no 256458, Turkish Academy of Science (TUBA-Gebip).

  7. Quantum Dots: Theory

    SciTech Connect

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  8. Slow electron cooling in colloidal quantum dots.

    PubMed

    Pandey, Anshu; Guyot-Sionnest, Philippe

    2008-11-01

    Hot electrons in semiconductors lose their energy very quickly (within picoseconds) to lattice vibrations. Slowing this energy loss could prove useful for more efficient photovoltaic or infrared devices. With their well-separated electronic states, quantum dots should display slow relaxation, but other mechanisms have made it difficult to observe. We report slow intraband relaxation (>1 nanosecond) in colloidal quantum dots. The small cadmium selenide (CdSe) dots, with an intraband energy separation of approximately 0.25 electron volts, are capped by an epitaxial zinc selenide (ZnSe) shell. The shell is terminated by a CdSe passivating layer to remove electron traps and is covered by ligands of low infrared absorbance (alkane thiols) at the intraband energy. We found that relaxation is markedly slowed with increasing ZnSe shell thickness.

  9. PRISM3 DOT1 Atlantic Basin Reconstruction

    USGS Publications Warehouse

    Dowsett, Harry; Robinson, Marci; Dwyer, Gary; Chandler, Mark; Cronin, Thomas

    2006-01-01

    PRISM3 DOT1 (Pliocene Research, Interpretation and Synoptic Mapping 3, Deep Ocean Temperature 1) provides a three-dimensional temperature reconstruction for the mid-Pliocene Atlantic basin, the first of several regional data sets that will comprise a global mid-Pliocene reconstruction. DOT1 is an alteration of modern temperature values for the Atlantic Ocean in 4 degree x 5 degree cells in 13 depth layers for December 1 based on Mg/Ca-derived BWT estimates from seventeen DSDP and ODP Sites and SST estimates from the PRISM2 reconstruction (Dowsett et al., 1999). DOT1 reflects a vaguely modern circulation system, assuming similar processes of deep-water formation; however, North Atlantic Deep Water (NADW) production is increased, and Antarctic Bottom Water (AABW) production is decreased. Pliocene NADW was approximately 2 degreesC warmer than modern temperatures, and Pliocene AABW was approximately 0.3 degreesC warmer than modern temperatures.

  10. Quantum Dot-Based Cell Motility Assay

    SciTech Connect

    Gu, Weiwei; Pellegrino, Teresa; Parak Wolfgang J; Boudreau,Rosanne; Le Gros, Mark A.; Gerion, Daniele; Alivisatos, A. Paul; Larabell, Carolyn A.

    2005-06-06

    Because of their favorable physical and photochemical properties, colloidal CdSe/ZnS-semiconductor nanocrystals (commonly known as quantum dots) have enormous potential for use in biological imaging. In this report, we present an assay that uses quantum dots as markers to quantify cell motility. Cells that are seeded onto a homogeneous layer of quantum dots engulf and absorb the nanocrystals and, as a consequence, leave behind a fluorescence-free trail. By subsequently determining the ratio of cell area to fluorescence-free track area, we show that it is possible to differentiate between invasive and noninvasive cancer cells. Because this assay uses simple fluorescence detection, requires no significant data processing, and can be used in live-cell studies, it has the potential to be a powerful new tool for discriminating between invasive and noninvasive cancer cell lines or for studying cell signaling events involved in migration.

  11. An excellent candidate for largely reducing interfacial thermal resistance: a nano-confined mass graded interface

    NASA Astrophysics Data System (ADS)

    Zhou, Yanguang; Zhang, Xiaoliang; Hu, Ming

    2016-01-01

    Pursuing extremely low interfacial thermal resistance has long been the task of many researchers in the area of nano-scale heat transfer, in particular pertaining to improve heat dissipation performance in electronic cooling. While it is well known and documented that confining a macroscopic third layer between two dissimilar materials usually increases the overall interfacial thermal resistance, no research has realized the fundamental decrease in resistance so far. By performing nonequilibrium molecular dynamics simulations, we report that the overall interfacial thermal resistance can be reduced by 6 fold by confining mass graded materials with thickness of the order of nanometers. As comparison we also studied the thermal transport across the perfectly abrupt interface and the widely used alloyed (rough) interface, which shows an opposing and significantly large increase in the overall thermal resistance. With the help of frequency dependent interfacial thermal conductance and wave packet dynamics simulation, different mechanisms governing the heat transfer across these three types of interfaces are identified. It is found that for the rough interface there are two different regimes of interfacial heat transfer, which originates from the competition between phonon scattering and the thickness of the interface. The mechanism of dramatically improved interfacial heat transfer across the nano-confined mass graded interface resides in the minor phonon reflection when the phonons first reach the mass graded area and the rare occurrence of phonon scattering in the subsequent interior region. The phonons are found to be gradually truncated by the geometric interfaces and can travel through the mass graded layer with a high transmission coefficient, benefited from the small mass mismatch between two neighboring layers in the interfacial region. Our findings provide deep insight into the phonon transport across nano-confined mass graded layers and also offer significant

  12. Atomistic simulation of surface functionalization on the interfacial properties of graphene-polymer nanocomposites

    SciTech Connect

    Wang, M. C.; Lai, Z. B.; Galpaya, D.; Yan, C.; Hu, N.; Zhou, L. M.

    2014-03-28

    Graphene has been increasingly used as nano sized fillers to create a broad range of nanocomposites with exceptional properties. The interfaces between fillers and matrix play a critical role in dictating the overall performance of a composite. However, the load transfer mechanism along graphene-polymer interface has not been well understood. In this study, we conducted molecular dynamics simulations to investigate the influence of surface functionalization and layer length on the interfacial load transfer in graphene-polymer nanocomposites. The simulation results show that oxygen-functionalized graphene leads to larger interfacial shear force than hydrogen-functionalized and pristine ones during pull-out process. The increase of oxygen coverage and layer length enhances interfacial shear force. Further increase of oxygen coverage to about 7% leads to a saturated interfacial shear force. A model was also established to demonstrate that the mechanism of interfacial load transfer consists of two contributing parts, including the formation of new surface and relative sliding along the interface. These results are believed to be useful in development of new graphene-based nanocomposites with better interfacial properties.

  13. Quantum Dot Solar Cells

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  14. Stationary patterns in centrifugally driven interfacial elastic fingering.

    PubMed

    Carvalho, Gabriel D; Gadêlha, Hermes; Miranda, José A

    2014-12-01

    A vortex sheet formalism is used to search for equilibrium shapes in the centrifugally driven interfacial elastic fingering problem. We study the development of interfacial instabilities when a viscous fluid surrounded by another of smaller density flows in the confined environment of a rotating Hele-Shaw cell. The peculiarity of the situation is associated to the fact that, due to a chemical reaction, the two-fluid boundary becomes an elastic layer. The interplay between centrifugal and elastic forces leads to the formation of a rich variety of stationary shapes. Visually striking equilibrium morphologies are obtained from the numerical solution of a nonlinear differential equation for the interface curvature (the shape equation), determined by a zero vorticity condition. Classification of the various families of shapes is made via two dimensionless parameters: an effective bending rigidity (ratio of elastic to centrifugal effects) and a geometrical radius of gyration. PMID:25615189

  15. Stationary patterns in centrifugally driven interfacial elastic fingering

    NASA Astrophysics Data System (ADS)

    Carvalho, Gabriel D.; Gadêlha, Hermes; Miranda, José A.

    2014-12-01

    A vortex sheet formalism is used to search for equilibrium shapes in the centrifugally driven interfacial elastic fingering problem. We study the development of interfacial instabilities when a viscous fluid surrounded by another of smaller density flows in the confined environment of a rotating Hele-Shaw cell. The peculiarity of the situation is associated to the fact that, due to a chemical reaction, the two-fluid boundary becomes an elastic layer. The interplay between centrifugal and elastic forces leads to the formation of a rich variety of stationary shapes. Visually striking equilibrium morphologies are obtained from the numerical solution of a nonlinear differential equation for the interface curvature (the shape equation), determined by a zero vorticity condition. Classification of the various families of shapes is made via two dimensionless parameters: an effective bending rigidity (ratio of elastic to centrifugal effects) and a geometrical radius of gyration.

  16. Nanowire Membrane-based Nanothermite: towards Processable and Tunable Interfacial Diffusion for Solid State Reactions

    PubMed Central

    Yang, Yong; Wang, Peng-peng; Zhang, Zhi-cheng; Liu, Hui-ling; Zhang, Jingchao; Zhuang, Jing; Wang, Xun

    2013-01-01

    Interfacial diffusion is of great importance in determining the performance of solid-state reactions. For nanometer sized particles, some solid-state reactions can be triggered accidently by mechanical stress owing to their large surface-to-volume ratio compared with the bulk ones. Therefore, a great challenge is the control of interfacial diffusion for solid state reactions, especially for energetic materials. Here we demonstrate, through the example of nanowire-based thermite membrane, that the thermite solid-state reaction can be easily tuned via the introduction of low-surface-energy coating layer. Moreover, this silicon-coated thermite membrane exhibit controlled wetting behavior ranging from superhydrophilic to superhydrophobic and, simultaneously, to significantly reduce the friction sensitivity of thermite membrane. This effect enables to increase interfacial resistance by increasing the amount of coating material. Indeed, our results described here make it possible to tune the solid-state reactions through the manipulation of interfacial diffusion between the reactants. PMID:23603809

  17. A biomimetic approach to enhancing interfacial interactions: polydopamine-coated clay as reinforcement for epoxy resin.

    PubMed

    Yang, Liping; Phua, Si Lei; Teo, Jun Kai Herman; Toh, Cher Ling; Lau, Soo Khim; Ma, Jan; Lu, Xuehong

    2011-08-01

    A facile biomimetic method was developed to enhance the interfacial interaction in polymer-layered silicate nanocomposites. By mimicking mussel adhesive proteins, a monolayer of polydopamine was constructed on clay surface by a controllable coating method. The modified clay (D-clay) was incorporated into an epoxy resin, it is found that the strong interfacial interactions brought by the polydopamine benefits not only the dispersion of the D-clay in the epoxy but also the effective interfacial stress transfer, leading to greatly improved thermomechanical properties at very low inorganic loadings. Rheological and infrared spectroscopic studies show that the interfacial interactions between the D-clay and epoxy are dominated by the hydrogen bonds between the catechol-enriched polydopamine and the epoxy. PMID:21728371

  18. [Interfacial area and interfacial transfer in two-phase flow

    SciTech Connect

    Ishii, M.

    1993-09-01

    A joint research program funded by the DOE/BES at Purdue University and the University of Wisconsin-Milwaukee has been underway. The main efforts of the Purdue program were concentrated on the following tasks. Development of Four Sensor Measurement Method; Experimental Study of Axial Changes of Transverse Void and Interfacial Area Profiles in Bubbly Flow; Modeling of the Probe-Particle Interaction Using Monte Carlo Numerical Simulation; and Experimental Study of the Stability of Interface of Very Large Bubbles. Highlights of these research results are reported.

  19. Alcohol-soluble interfacial fluorenes for inverted polymer solar cells: sequence induced spatial conformation dipole moment.

    PubMed

    Chen, Lie; Liu, Xiangfu; Wei, Yingkai; Wu, Feiyan; Chen, Yiwang

    2016-01-21

    Three fluorene-based alcohol-soluble organic small molecule electrolytes (SMEs) with different conjugated backbones, namely, TFTN-Br, FTFN-Br and FTTFN-Br, were designed as cathode interfacial layers for inverted polymer solar cells (i-PSCs). The insertion of SMEs to the ITO/active layer interfaces effectively lowered the energy barrier for electron transport and improved the inherent compatibility between the hydrophilic ITO and hydrophobic active layers. Due to these advantages, the device based on poly(3-hexylthiophene) (P3HT):(6,6)-phenyl-C61 butyric acid methyl ester (PC61BM) with TFTN-Br as the cathode interfacial layer achieved an improved power conversion efficiency (PCE) of 3.8%, which is a 26% improvement when compared to the standard device comprising ZnO cathode interfacial layers (PCE = 3.0%). Devices with FTFN-Br and FTTFN-Br also showed an improved PCE of 3.1% and 3.5%, respectively. The variation in device performance enhancement was found to be primarily correlated with the different conformation of their assembly onto the electrode caused by the joint sequence of the polar group of the SMEs, consequently impacting the dipole moment and interface morphology. In addition, introducing SMEs as the cathode interfacial layer also produced devices with long-term stability.

  20. Alcohol-soluble interfacial fluorenes for inverted polymer solar cells: sequence induced spatial conformation dipole moment.

    PubMed

    Chen, Lie; Liu, Xiangfu; Wei, Yingkai; Wu, Feiyan; Chen, Yiwang

    2016-01-21

    Three fluorene-based alcohol-soluble organic small molecule electrolytes (SMEs) with different conjugated backbones, namely, TFTN-Br, FTFN-Br and FTTFN-Br, were designed as cathode interfacial layers for inverted polymer solar cells (i-PSCs). The insertion of SMEs to the ITO/active layer interfaces effectively lowered the energy barrier for electron transport and improved the inherent compatibility between the hydrophilic ITO and hydrophobic active layers. Due to these advantages, the device based on poly(3-hexylthiophene) (P3HT):(6,6)-phenyl-C61 butyric acid methyl ester (PC61BM) with TFTN-Br as the cathode interfacial layer achieved an improved power conversion efficiency (PCE) of 3.8%, which is a 26% improvement when compared to the standard device comprising ZnO cathode interfacial layers (PCE = 3.0%). Devices with FTFN-Br and FTTFN-Br also showed an improved PCE of 3.1% and 3.5%, respectively. The variation in device performance enhancement was found to be primarily correlated with the different conformation of their assembly onto the electrode caused by the joint sequence of the polar group of the SMEs, consequently impacting the dipole moment and interface morphology. In addition, introducing SMEs as the cathode interfacial layer also produced devices with long-term stability. PMID:26694627

  1. Insight into interfacial effect on effective physical properties of fibrous materials. I. The volume fraction of soft interfaces around anisotropic fibers

    NASA Astrophysics Data System (ADS)

    Xu, Wenxiang; Wang, Han; Niu, Yanze; Bai, Jingtao

    2016-01-01

    With advances in interfacial properties characterization technologies, the interfacial volume fraction is a feasible parameter for evaluating effective physical properties of materials. However, there is a need to determine the interfacial volume fraction around anisotropic fibers and a need to assess the influence of such the interfacial property on effective properties of fibrous materials. Either ways, the accurate prediction of interfacial volume fraction is required. Towards this end, we put forward both theoretical and numerical schemes to determine the interfacial volume fraction in fibrous materials, which are considered as a three-phase composite structure consisting of matrix, anisotropic hard spherocylinder fibers, and soft interfacial layers with a constant dimension coated on the surface of each fiber. The interfacial volume fraction actually represents the fraction of space not occupied by all hard fibers and matrix. The theoretical scheme that adopts statistical geometry and stereological theories is essentially an analytic continuation from spherical inclusions. By simulating such three-phase chopped fibrous materials, we numerically derive the interfacial volume fraction. The theoretical and numerical schemes provide a quantitative insight that the interfacial volume fraction depends strongly on the fiber geometries like fiber shape, geometric size factor, and fiber size distribution. As a critical interfacial property, the present contribution can be further drawn into assessing effective physical properties of fibrous materials, which will be demonstrated in another paper (Part II) of this series.

  2. Insight into interfacial effect on effective physical properties of fibrous materials. I. The volume fraction of soft interfaces around anisotropic fibers.

    PubMed

    Xu, Wenxiang; Wang, Han; Niu, Yanze; Bai, Jingtao

    2016-01-01

    With advances in interfacial properties characterization technologies, the interfacial volume fraction is a feasible parameter for evaluating effective physical properties of materials. However, there is a need to determine the interfacial volume fraction around anisotropic fibers and a need to assess the influence of such the interfacial property on effective properties of fibrous materials. Either ways, the accurate prediction of interfacial volume fraction is required. Towards this end, we put forward both theoretical and numerical schemes to determine the interfacial volume fraction in fibrous materials, which are considered as a three-phase composite structure consisting of matrix, anisotropic hard spherocylinder fibers, and soft interfacial layers with a constant dimension coated on the surface of each fiber. The interfacial volume fraction actually represents the fraction of space not occupied by all hard fibers and matrix. The theoretical scheme that adopts statistical geometry and stereological theories is essentially an analytic continuation from spherical inclusions. By simulating such three-phase chopped fibrous materials, we numerically derive the interfacial volume fraction. The theoretical and numerical schemes provide a quantitative insight that the interfacial volume fraction depends strongly on the fiber geometries like fiber shape, geometric size factor, and fiber size distribution. As a critical interfacial property, the present contribution can be further drawn into assessing effective physical properties of fibrous materials, which will be demonstrated in another paper (Part II) of this series. PMID:26747814

  3. Measuring Interfacial Tension Between Immiscible Liquids

    NASA Technical Reports Server (NTRS)

    Rashidnia, Nasser; Balasubramaniam, R.; Delsignore, David M.

    1995-01-01

    Glass capillary tube technique measures interfacial tension between two immiscible liquids. Yields useful data over fairly wide range of interfacial tensions, both for pairs of liquids having equal densities and pairs of liquids having unequal densities. Data on interfacial tensions important in diverse industrial chemical applications, including enhanced extraction of oil; printing; processing foods; and manufacture of paper, emulsions, foams, aerosols, detergents, gel encapsulants, coating materials, fertilizers, pesticides, and cosmetics.

  4. Effect of the length of ligands passivating quantum dots on the electrooptical characteristics of organic light-emitting diodes

    SciTech Connect

    Kurochkin, N. S.; Vashchenko, A. A. Vitukhnovsky, A. G.; Tananaev, P. N.

    2015-07-15

    The electrooptical characteristics of organic light-emitting diodes with quantum dots passivated with organic ligands of different lengths as emitting centers are investigated. It is established that the thickness of the ligand coating covering the quantum dots has little effect on the Förster energy transfer in the diodes, but significantly affects the direct injection of charge carriers into the quantum-dot layer. It is shown that the thickness of the passivation coating covering the quantum dots in a close-packed nanoparticle layer is deter- mined both by the length of passivating ligands and the degree of quantum-dot coverage with ligands.

  5. Influence of interfacial rheology on stabilization of the tear film

    NASA Astrophysics Data System (ADS)

    Bhamla, M. Saad; Fuller, Gerald G.

    2014-11-01

    The tear film that protecting the ocular surface is a complex, thin film comprised of a collection of proteins and lipids that come together to provide a number of important functions. Of particular interest in this presentation is meibum, an insoluble layer that is spread from glands lining our eyelids. Past work has focussed on the role of this layer in reducing evaporation, although conflicting evidence on its ability to reduce evaporative loss has been published. We present here the beneficial effects that are derived through the interfacial viscoelasticity of the meibomian lipid film. This is a duplex film is comprised of a rich mixture of phospholipids, long chain fatty esters, and cholesterol esters. Using interfacial rheology measurements, meibum has been shown to be highly viscoelastic. By measuring the drainage and dewetting dynamics of thin aqueous films from hemispherical surfaces where those films are laden with insoluble layers of lipids at controlled surface pressure, we offer evidence that these layers strongly stabilize the films because of their ability to support surface shearing stresses. This alternative view of the role of meibum can help explain the origin of meibomian gland dysfunction, or dry eye disease, where improper compositions of this lipid mixture do not offer the proper mechanical resistance to breakage and dewetting of the tear film.

  6. Dielectrophoretic Manipulation and Separation of Microparticles Using Microarray Dot Electrodes

    PubMed Central

    Yafouz, Bashar; Kadri, Nahrizul Adib; Ibrahim, Fatimah

    2014-01-01

    This paper introduces a dielectrophoretic system for the manipulation and separation of microparticles. The system is composed of five layers and utilizes microarray dot electrodes. We validated our system by conducting size-dependent manipulation and separation experiments on 1, 5 and 15 μm polystyrene particles. Our findings confirm the capability of the proposed device to rapidly and efficiently manipulate and separate microparticles of various dimensions, utilizing positive and negative dielectrophoresis (DEP) effects. Larger size particles were repelled and concentrated in the center of the dot by negative DEP, while the smaller sizes were attracted and collected by the edge of the dot by positive DEP. PMID:24705632

  7. Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

    SciTech Connect

    Oliveira, F.; Fischer, I. A.; Schulze, J.; Benedetti, A.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.

    2015-03-28

    We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge{sub 0.96}Sn{sub 0.04} self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.

  8. Non contact probing of interfacial stiffnesses between two plates by zero-group velocity Lamb modes

    NASA Astrophysics Data System (ADS)

    Mezil, Sylvain; Laurent, Jérôme; Royer, Daniel; Prada, Claire

    2014-07-01

    A non contact technique using zero-group velocity (ZGV) Lamb modes is developed to probe the bonding between two solid plates coupled by a thin layer. The layer thickness is assumed to be negligible compared with the plate thickness and the acoustic wavelength. The coupling layer is modeled by a normal and a tangential spring to take into account the normal and shear interfacial stresses. Theoretical ZGV frequencies are determined for a symmetrical bi-layer structure and the effect of the interfacial stiffnesses on the cut-off and ZGV frequencies are evaluated. Experiments are conducted with two glass plates bonded by a drop of water, oil, or salol, leading to a few micrometer thick layer. An evaluation of normal and shear stiffnesses is obtained using ZGV resonances locally excited and detected with laser ultrasonic techniques.

  9. Protein interfacial structure and nanotoxicology

    NASA Astrophysics Data System (ADS)

    White, John W.; Perriman, Adam W.; McGillivray, Duncan J.; Lin, Jhih-Min

    2009-02-01

    Here we briefly recapitulate the use of X-ray and neutron reflectometry at the air-water interface to find protein structures and thermodynamics at interfaces and test a possibility for understanding those interactions between nanoparticles and proteins which lead to nanoparticle toxicology through entry into living cells. Stable monomolecular protein films have been made at the air-water interface and, with a specially designed vessel, the substrate changed from that which the air-water interfacial film was deposited. This procedure allows interactions, both chemical and physical, between introduced species and the monomolecular film to be studied by reflectometry. The method is briefly illustrated here with some new results on protein-protein interaction between β-casein and κ-casein at the air-water interface using X-rays. These two proteins are an essential component of the structure of milk. In the experiments reported, specific and directional interactions appear to cause different interfacial structures if first, a β-casein monolayer is attacked by a κ-casein solution compared to the reverse. The additional contrast associated with neutrons will be an advantage here. We then show the first results of experiments on the interaction of a β-casein monolayer with a nanoparticle titanium oxide sol, foreshadowing the study of the nanoparticle "corona" thought to be important for nanoparticle-cell wall penetration.

  10. Convection and interfacial mass exchange

    NASA Astrophysics Data System (ADS)

    Colinet, P.; Legros, J. C.; Dauby, P. C.; Lebon, G.; Bestehorn, M.; Stephan, P.; Tadrist, L.; Cerisier, P.; Poncelet, D.; Barremaecker, L.

    2005-10-01

    Mass-exchange through fluid interfaces is ubiquitous in many natural and industrial processes. Yet even basic phase-change processes such as evaporation of a pure liquid are not fully understood, in particular when coupled with fluid motions in the vicinity of the phase-change interface, or with microscopic physical phenomena in the vicinity of a triple line (where the interface meets a solid). Nowadays, many industries recognise that this lack of fundamental knowledge is hindering the optimisation of existing processes. Their modelling tools are too dependent on empirical correlations with a limited - and often unknown - range of applicability. In addition to the intrinsic multiscale nature of the phenomena involved in typical industrial processes linked to interfacial mass exchange, their study is highly multi-disciplinary, involving tools and techniques belonging to physical chemistry, chemical engineering, fluid dynamics, non-linear physics, non-equilibrium thermodynamics, chemistry and statistical physics. From the experimental point of view, microgravity offers a unique environment to obtain valuable data on phase-change processes, greatly reducing the influence of body forces and allowing the detailed and accurate study of interfacial dynamics. In turn, such improved understanding leads to optimisation of industrial processes and devices involving phase-change, both for space and ground applications.

  11. Sinusoidal Forcing of Interfacial Films

    NASA Astrophysics Data System (ADS)

    Rasheed, Fayaz; Raghunandan, Aditya; Hirsa, Amir; Lopez, Juan

    2015-11-01

    Fluid transport, in vivo, is accomplished via pumping mechanisms of the heart and lungs, which results in biological fluids being subjected to oscillatory shear. Flow is known to influence biological macromolecules, but predicting the effect of shear is incomplete without also accounting for the influence of complex interfaces ubiquitous throughout the body. Here, we investigated the oscillatory response of the structure of aqueous interfacial films using a cylindrical knife edge viscometer. Vitamin K1 was used as a model monolayer because its behaviour has been thoroughly quantified and it doesn't show any measurable hysteresis. The monolayer was subjected to sinusoidal forcing under varied conditions of surface concentrations, periodic frequencies, and knife edge amplitudes. Particle Image Velocimetry(PIV) data was collected using Brewster Angle Microscopy(BAM), revealing the influence of oscillatory interfacial shear stress on the monolayer. Insights were gained as to how the velocity profile dampens at specific distances from the knife edge contact depending on the amplitude, frequency, and concentration of Vitamin K1. Supported by NNX13AQ22G, National Aeronautics and Space Administration.

  12. Templating growth of gold nanostructures with a CdSe quantum dot array.

    PubMed

    Paul, Neelima; Metwalli, Ezzeldin; Yao, Yuan; Schwartzkopf, Matthias; Yu, Shun; Roth, Stephan V; Müller-Buschbaum, Peter; Paul, Amitesh

    2015-06-01

    In optoelectronic devices based on quantum dot arrays, thin nanolayers of gold are preferred as stable metal contacts and for connecting recombination centers. The optimal morphology requirements are uniform arrays with precisely controlled positions and sizes over a large area with long range ordering since this strongly affects device performance. To understand the development of gold layer nanomorphology, the detailed mechanism of structure formation are probed with time-resolved grazing incidence small-angle X-ray scattering (GISAXS) during gold sputter deposition. Gold is sputtered on a CdSe quantum dot array with a characteristic quantum dot spacing of ≈7 nm. In the initial stages of gold nanostructure growth, a preferential deposition of gold on top of quantum dots occurs. Thus, the quantum dots act as nucleation sites for gold growth. In later stages, the gold nanoparticles surrounding the quantum dots undergo a coarsening to form a complete layer comprised of gold-dot clusters. Next, growth proceeds dominantly via vertical growth of gold on these gold-dot clusters to form an gold capping layer. In this capping layer, a shift of the cluster boundaries due to ripening is found. Thus, a templating of gold on a CdSe quantum dot array is feasible at low gold coverage.

  13. Enhancing Perovskite Solar Cell Performance by Interface Engineering Using CH3NH3PbBr0.9I2.1 Quantum Dots.

    PubMed

    Cha, Mingyang; Da, Peimei; Wang, Jun; Wang, Weiyi; Chen, Zhanghai; Xiu, Faxian; Zheng, Gengfeng; Wang, Zhong-Sheng

    2016-07-13

    To improve the interfacial charge transfer that is crucial to the performance of perovskite solar cells, the interface engineering in a device should be rationally designed. Here we have developed an interface engineering method to tune the photovoltaic performance of planar-heterojunction perovskite solar cells by incorporating MAPbBr3-xIx (MA = CH3NH3) quantum dots (QDs) between the MAPbI3 perovskite film and the hole-transporting material (HTM) layer. By adjustment of the Br:I ratio, the as-synthesized MAPbBr3-xIx QDs show tunable fluorescence and band edge positions. When the valence band (VB) edge of MAPbBr3-xIx QDs is located below that of the MAPbI3 perovskite, the hole transfer from the MAPbI3 perovskite film to the HTM layer is hindered, and hence, the power conversion efficiency decreases. In contrast, when the VB edge of MAPbBr3-xIx QDs is located between the VB edge of the MAPbI3 perovskite film and the highest occupied molecular orbital of the HTM layer, the hole transfer from the MAPbI3 perovskite film to the HTM layer is well-facilitated, resulting in significant improvements in the fill factor, short-circuit photocurrent, and power conversion efficiency. PMID:27345104

  14. Dots and Cubes

    ERIC Educational Resources Information Center

    Eaton, Bryan L.

    1974-01-01

    Illustrated is the mathematical analysis of a three-dimensional game using techniques from the calculus of finite differences. This game is an analog of the familiar two-dimensional game, Dots and Squares. (JP)

  15. Understanding controls on interfacial wetting at epitaxial graphene: Experiment and Theory

    SciTech Connect

    Zhou, Hua; Ganesh, Panchapakesan; Presser, Volker; Wander, Matthew C; Fenter, Paul; Kent, Paul R; Jiang, Deen; Chialvo, Ariel A; Mcdonough, John; Shuford, Kevin L; Gogotsi, Yury G.

    2012-01-01

    The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution x-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle c = 73 ) is substantially smaller than that of multilayer graphene ( c = 93 ). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

  16. Theoretical study of interfacial damping in perpendicular anisotropy superlattices along multiple crystal orientations

    NASA Astrophysics Data System (ADS)

    Qu, T.; Victora, R. H.

    2016-06-01

    Damping, representing the loss of magnetic energy from the electrons to the lattice through the spin-orbit interaction, is calculated for Co/Pt and Co/Pd superlattices grown along the (001), (111), and (011) orientations. The damping consists of two contributions: interfacial and, usually, bulk. The interfacial damping shows dependence on the superlattice orientation. The origin of the interfacial damping is due to both the distorted electronic states at the interface and the spin-orbit interaction in the weakly polarized nonmagnetic Pt/Pd layers deposited on Co layers. The density of states around the Fermi level provides the spin-flip channels and closely correlates with the damping value. The damping shows asymmetry in the two transverse directions of the spin for spins at most angles. The damping for out-of-plane magnetization can be as much as 1.7 times larger than that of in-plane magnetization.

  17. Understanding controls on interfacial wetting at epitaxial graphene: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Zhou, Hua; Ganesh, P.; Presser, Volker; Wander, Matthew C. F.; Fenter, Paul; Kent, Paul R. C.; Jiang, De-En; Chialvo, Ariel A.; McDonough, John; Shuford, Kevin L.; Gogotsi, Yury

    2012-01-01

    The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution x-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle θc = 73°) is substantially smaller than that of multilayer graphene (θc = 93°). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

  18. Understanding controls on interfacial wetting at epitaxial graphene: Experiment and Theory

    SciTech Connect

    Kent, Paul R

    2011-01-01

    The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution x-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle {Theta}{sub c} = 73{sup o}) is substantially smaller than that of multilayer graphene ({Theta}{sub c} = 93{sup o}). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

  19. The Dynamic Organic/Inorganic Interface of Colloidal PbS Quantum Dots.

    PubMed

    Grisorio, Roberto; Debellis, Doriana; Suranna, Gian Paolo; Gigli, Giuseppe; Giansante, Carlo

    2016-06-01

    Colloidal quantum dots are composed of nanometer-sized crystallites of inorganic semiconductor materials bearing organic molecules at their surface. The organic/inorganic interface markedly affects forms and functions of the quantum dots, therefore its description and control are important for effective application. Herein we demonstrate that archetypal colloidal PbS quantum dots adapt their interface to the surroundings, thus existing in solution phase as equilibrium mixtures with their (metal-)organic ligand and inorganic core components. The interfacial equilibria are dictated by solvent polarity and concentration, show striking size dependence (leading to more stable ligand/core adducts for larger quantum dots), and selectively involve nanocrystal facets. This notion of ligand/core dynamic equilibrium may open novel synthetic paths and refined nanocrystal surface-chemistry strategies.

  20. The Dynamic Organic/Inorganic Interface of Colloidal PbS Quantum Dots.

    PubMed

    Grisorio, Roberto; Debellis, Doriana; Suranna, Gian Paolo; Gigli, Giuseppe; Giansante, Carlo

    2016-06-01

    Colloidal quantum dots are composed of nanometer-sized crystallites of inorganic semiconductor materials bearing organic molecules at their surface. The organic/inorganic interface markedly affects forms and functions of the quantum dots, therefore its description and control are important for effective application. Herein we demonstrate that archetypal colloidal PbS quantum dots adapt their interface to the surroundings, thus existing in solution phase as equilibrium mixtures with their (metal-)organic ligand and inorganic core components. The interfacial equilibria are dictated by solvent polarity and concentration, show striking size dependence (leading to more stable ligand/core adducts for larger quantum dots), and selectively involve nanocrystal facets. This notion of ligand/core dynamic equilibrium may open novel synthetic paths and refined nanocrystal surface-chemistry strategies. PMID:27038221