Review – Quantum Dots and Their Application in Lighting, Displays, and Biology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frecker, Talitha; Bailey, Danielle; Arzeta-Ferrer, Xochitl

2015-08-18

In this review, we focus on the advancement of white light emitting nanocrystals, their usage as the emissive layer in LEDs and display backlights, and examine the increased efficiency and longevity of quantum dots based colored LEDs. In addition, we also explore recent discoveries on quantum dots as biological labels, dynamic trackers, and applications in drug delivery.

Bright colloidal quantum dot light-emitting diodes enabled by efficient chlorination

NASA Astrophysics Data System (ADS)

Li, Xiyan; Zhao, Yong-Biao; Fan, Fengjia; Levina, Larissa; Liu, Min; Quintero-Bermudez, Rafael; Gong, Xiwen; Quan, Li Na; Fan, James; Yang, Zhenyu; Hoogland, Sjoerd; Voznyy, Oleksandr; Lu, Zheng-Hong; Sargent, Edward H.

2018-03-01

The external quantum efficiencies of state-of-the-art colloidal quantum dot light-emitting diodes (QLEDs) are now approaching the limit set by the out-coupling efficiency. However, the brightness of these devices is constrained by the use of poorly conducting emitting layers, a consequence of the present-day reliance on long-chain organic capping ligands. Here, we report how conductive and passivating halides can be implemented in Zn chalcogenide-shelled colloidal quantum dots to enable high-brightness green QLEDs. We use a surface management reagent, thionyl chloride (SOCl2), to chlorinate the carboxylic group of oleic acid and graft the surfaces of the colloidal quantum dots with passivating chloride anions. This results in devices with an improved mobility that retain high external quantum efficiencies in the high-injection-current region and also feature a reduced turn-on voltage of 2.5 V. The treated QLEDs operate with a brightness of 460,000 cd m-2, significantly exceeding that of all previously reported solution-processed LEDs.

Effect of core quantum-dot size on power-conversion-efficiency for silicon solar-cells implementing energy-down-shift using CdSe/ZnS core/shell quantum dots.

PubMed

Baek, Seung-Wook; Shim, Jae-Hyoung; Seung, Hyun-Min; Lee, Gon-Sub; Hong, Jin-Pyo; Lee, Kwang-Sup; Park, Jea-Gun

2014-11-07

Silicon solar cells mainly absorb visible light, although the sun emits ultraviolet (UV), visible, and infrared light. Because the surface reflectance of a textured surface with SiNX film on a silicon solar cell in the UV wavelength region (250-450 nm) is higher than ∼27%, silicon solar-cells cannot effectively convert UV light into photo-voltaic power. We implemented the concept of energy-down-shift using CdSe/ZnS core/shell quantum-dots (QDs) on p-type silicon solar-cells to absorb more UV light. CdSe/ZnS core/shell QDs demonstrated clear evidence of energy-down-shift, which absorbed UV light and emitted green-light photoluminescence signals at a wavelength of 542 nm. The implementation of 0.2 wt% (8.8 nm QDs layer) green-light emitting CdSe/ZnS core/shell QDs reduced the surface reflectance of the textured surface with SiNX film on a silicon solar-cell from 27% to 15% and enhanced the external quantum efficiency (EQE) of silicon solar-cells to around 30% in the UV wavelength region, thereby enhancing the power conversion efficiency (PCE) for p-type silicon solar-cells by 5.5%.

Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

PubMed

Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki

2018-06-19

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashchenko, A. A.; Goriachiy, D. O., E-mail: goryachii@phystech.edu; Vitukhnovsky, A. G.

Experimental samples of organic light-emitting diodes with transport layers based on polythienothiophenes and using CdSe/CdS/ZnS semiconductor quantum dots with an internal quantum efficiency up to 85% in the emitting layer are investigated. It is shown that solubility and film-forming properties are key for using polythienothiophenes in light-emitting diodes. The most promising polythienothiophenes are identified on the basis of the results obtained.

Highly efficient organic light-emitting diodes with a quantum dot interfacial layer.

PubMed

Ryu, Seung Yoon; Hwang, Byoung Har; Park, Ki Wan; Hwang, Hyeon Seok; Sung, Jin Woo; Baik, Hong Koo; Lee, Chang Ho; Song, Seung Yong; Lee, Jun Yeob

2009-02-11

Advanced organic light-emitting diodes (OLEDs), based on a multiple structure, were achieved in combination with a quantum dot (QD) interfacial layer. The authors used core/shell CdSe/ZnS QDs passivated with trioctylphosphine oxide (TOPO) and TOPO-free QDs as interlayers. Multiple-structure OLEDs (MOLEDs) with TOPO-free QDs showed higher device efficiency because of a well-defined interfacial monolayer formation. Additionally, the three-unit MOLED showed high performance for device efficiency with double-structured QD interfacial layers due to the enhanced charge balance and recombination probability.

Colloidal quantum dot active layers for light emitting diodes

NASA Astrophysics Data System (ADS)

Pagan, Jennifer G.; Stokes, Edward B.; Patel, Kinnari; Burkhart, Casey C.; Ahrens, Michael T.; Barletta, Philip T.; O'Steen, Mark

2006-07-01

In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. Properties of p-type Mg doped overgrowth GaN are examined via circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). Electroluminescence of LED test structures is reported, and an ideality factor of n = 1.6 is demonstrated.

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Modeling and studying of white light emitting diodes based on CdS/ZnS spherical quantum dots

NASA Astrophysics Data System (ADS)

Hasanirokh, K.; Asgari, A.

2018-07-01

In this paper, we propose a quantum dot (QD) based white light emitting diode (WLED) structure to study theoretically the material gain and quantum efficiency of the system. We consider the spherical QDs with a II-VI semiconductor core (CdS) that covered with a wider band gap semiconductor acting as a shell (ZnS). In order to generate white light spectrum, we use layers with different dot size that can emit blue, green and red colors. The blue emission originating from CdS core combines to green/orange components originating from ZnS shell and creates an efficiency white light emission. To model this device, at first, we solve Schrödinger and Poisson equations self consistently and obtain eigen energies and wave functions. Then, we calculate the optical gain and internal quantum efficiency (IQE) of a CdS/ZnS LED sample. We investigate the structural parameter effects on the optical properties of the WLED. The numerical results show that the gain profile and IQE curves depend strongly on the structural parameters such as dot size, carrier density and volume scaling parameter. The gain profile becomes higher and wider with increasing the core radius while it becomes less and narrower with increasing the shell thickness. Furthermore, it is found that the volume scaling parameter can manage the system quantum efficiency.

III-nitride quantum dots for ultra-efficient solid-state lighting

DOE PAGES

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

2016-05-23

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

PubMed

Nguyen, H P T; Zhang, S; Cui, K; Han, X; Fathololoumi, S; Couillard, M; Botton, G A; Mi, Z

2011-05-11

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.

Efficient nanosecond photoluminescence from infrared PbS quantum dots coupled to plasmonic nanoantennas

DOE PAGES

Akselrod, Gleb M.; Weidman, Mark C.; Li, Ying; ...

2016-09-13

Infrared (IR) light sources with high modulation rates are critical components for on-chip optical communications. Lead-based colloidal quantum dots are promising nonepitaxial materials for use in IR light-emitting diodes, but their slow photoluminescence lifetime is a serious limitation. Here we demonstrate coupling of PbS quantum dots to colloidal plasmonic nanoantennas based on film-coupled metal nanocubes, resulting in a dramatic 1300-fold reduction in the emission lifetime from the microsecond to the nanosecond regime. This lifetime reduction is primarily due to a 1100-fold increase in the radiative decay rate owing to the high quantum yield (65%) of the antenna. The short emissionmore » lifetime is accompanied by high antenna quantum efficiency and directionality. Lastly, this nonepitaxial platform points toward GHz frequency, electrically modulated, telecommunication wavelength light-emitting diodes and single-photon sources.« less

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

NASA Astrophysics Data System (ADS)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

PubMed

Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

2012-07-01

White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes

PubMed Central

Bae, Wan Ki; Park, Young-Shin; Lim, Jaehoon; Lee, Donggu; Padilha, Lazaro A.; McDaniel, Hunter; Robel, Istvan; Lee, Changhee; Pietryga, Jeffrey M.; Klimov, Victor I.

2013-01-01

Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separation due to applied electric field. Here we address this problem with studies that correlate the excited state dynamics of structurally engineered quantum dots with their emissive performance within LEDs. We find that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents. Further, we demonstrate two specific approaches for mitigating this problem using heterostructured quantum dots, either by suppressing Auger decay through the introduction of an intermediate alloyed layer, or by using an additional shell that impedes electron transfer into the quantum dot to help balance electron and hole injection. PMID:24157692

Luminescent carbon quantum dots with high quantum yield as a single white converter for white light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, X. T.; Zhang, Y.; Liu, X. G., E-mail: liuxuguang@tyut.edu.cn

Carbon quantum dots (CQDs) with high quantum yield (51.4%) were synthesized by a one-step hydrothermal method using thiosalicylic acid and ethylenediamine as precursor. The CQDs have the average diameter of 2.3 nm and possess excitation-independent emission wavelength in the range from 320 to 440 nm excitation. Under an ultraviolet (UV) excitation, the CQDs aqueous solutions emit bright blue fluorescence directly and exhibit broad emission with a high spectral component ratio of 67.4% (blue to red intensity to total intensity). We applied the CQDs as a single white-light converter for white light emitting diodes (WLEDs) using a UV-LED chip as the excitation lightmore » source. The resulted WLED shows superior performance with corresponding color temperature of 5227 K and the color coordinates of (0.34, 0.38) belonging to the white gamut.« less

Unveiling the composite structures of emissive consolidated p-i-n junction nanocells for white light emission.

PubMed

Lee, Kyu Seung; Shim, Jaeho; Lee, Hyunbok; Yim, Sang-Youp; Angadi, Basavaraj; Lim, Byungkwon; Son, Dong Ick

2018-06-08

Hybrid organic-Red-Green-Blue (RGB) color quantum dots were incorporated into consolidated p(polymer)-i(RGB quantum dots)-n(small molecules) junction structures to fabricate a single active layer for a light emitting diode device for white electroluminescence. The semiconductor RGB quantum dots, as an intrinsic material, were electrostatically bonded between functional groups of the p-type polymer organic material core surface and the n-type small molecular organic material shell surface. The ZnCdSe/ZnS and CdSe/ZnS quantum dots distributed uniformly and isotropically surrounding the polymer core which in turn was surrounded by small molecular organic materials. In the present study, we have identified the mechanisms of chemical synthesis and interactions of the p-i-n junction nanocell structure through modeling studies by DFT calculations. We have also investigated optical, structural and electrical properties along with the carrier transport mechanism of the light emitting diodes which have a single active layer of consolidated p-i-n junction nanocells for white electroluminescence.

Cesium lead halide perovskite quantum dot-based warm white light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Bi, Ke; Wang, Dan; Wang, Peng; Duan, Bin; Zhang, Tieqiang; Wang, Yinghui; Zhang, Hanzhuang; Zhang, Yu

2017-05-01

White light-emitting diodes (WLEDs) were fabricated by employing a combination of a commercial yellow emission Ce3+-doped Y3Al5O12 (YAG:Ce)-based phosphor and all-inorganic perovskite quantum dots pumped with blue LED chip. Perovskite quantum dot solution was used as the color conversion layer with liquid-type structure. Red-emitting materials based on cesium lead halide (CsPb(X)3) perovskite quantum dots were introduced to generate WLEDs with high efficacy and high color rendering index through compensating the red emission of the YAG:Ce phosphor-based commercialized WLEDs. The experimental results suggested that the luminous efficiency and color rendering index of the as-prepared WLED device could reach up to 84.7 lm/W and 89, respectively. The characteristics of those devices including correlated color temperature (CCT), color rendering index (CRI), and color coordinates were observed under different forward currents. The as-fabricated warm WLEDs showed excellent color stability against the increasing current, while the color coordinates shifted slightly from (0.3837, 0.3635) at 20 mA to (0.3772, 0.3592) at 120 mA and color temperature tuned from 3803 to 3953 K.

Polymer as an Additive in the Emitting Layer for High-Performance Quantum Dot Light-Emitting Diodes.

PubMed

Liang, Feng; Liu, Yuan; Hu, Yun; Shi, Ying-Li; Liu, Yu-Qiang; Wang, Zhao-Kui; Wang, Xue-Dong; Sun, Bao-Quan; Liao, Liang-Sheng

2017-06-14

A facile but effective method is proposed to improve the performance of quantum dot light-emitting diodes (QLEDs) by incorporating a polymer, poly(9-vinlycarbazole) (PVK), as an additive into the CdSe/CdS/ZnS quantum dot (QD) emitting layer (EML). It is found that the charge balance of the device with the PVK-added EML was greatly improved. In addition, the film morphology of the hole-transporting layer (HTL) which is adjacent to the EML, is substantially improved. The surface roughness of the HTL is reduced from 5.87 to 1.38 nm, which promises a good contact between the HTL and the EML, resulting in low leakage current. With the improved charge balance and morphology, a maximum external quantum efficiency (EQE) of 16.8% corresponding to the current efficiency of 19.0 cd/A is achievable in the red QLEDs. The EQE is 1.6 times as high as that (10.5%) of the reference QLED, comprising a pure QD EML. This work demonstrates that incorporating some polymer molecules into the QD EML as additives could be a facile route toward high-performance QLEDs.

Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs

NASA Astrophysics Data System (ADS)

Lobanov, S. V.; Tikhodeev, S. G.; Gippius, N. A.; Maksimov, A. A.; Filatov, E. V.; Tartakovskii, I. I.; Kulakovskii, V. D.; Weiss, T.; Schneider, C.; Geßler, J.; Kamp, M.; Höfling, S.

2015-11-01

We study the polarization properties of light emitted by quantum dots that are embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral grating fabricated by partial etching of the waveguide layer has been shown to result in a high circular polarization degree ρc of the quantum dot emission in the absence of external magnetic field. The physical nature of the phenomenon can be understood in terms of the reciprocity principle taking into account the structural symmetry. At the resonance wavelength, the magnitude of | ρc| is predicted to exceed 98%. The experimentally achieved value of | ρc|=81 % is smaller, which is due to the contribution of unpolarized light scattered by grating defects, thus breaking its periodicity. The achieved polarization degree estimated removing the unpolarized nonresonant background from the emission spectra can be estimated to be as high as 96%, close to the theoretical prediction.

Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm

NASA Astrophysics Data System (ADS)

Jia, Chuanyu; Yu, Tongjun; Mu, Sen; Pan, Yaobo; Yang, Zhijian; Chen, Zhizhong; Qin, Zhixin; Zhang, Guoyi

2007-05-01

Polarization-resolved edge-emitting electroluminescence of InGaN /GaN multiple quantum well (MQW) light emitting diodes (LEDs) from 395to455nm was measured. Polarization ratio decreased from 3.2 of near-ultraviolet LEDs (395nm) to 1.9 of blue LEDs (455nm). Based on TE mode dominant emissions in InGaN /GaN MQWs, compressive strain in well region favors TE mode, indium induced quantum-dot-like behavior leads to an increased TM component. As wavelength increased, indium enhanced quantum-dot-like behavior became obvious and E ‖C electroluminescence signal increased thus lower polarization ratio. Electroluminescence spectrum shifts confirmed that quantum dotlike behaviors rather than strain might be dominant in modifying luminescence mode of InGaN /GaN MQWs from near ultraviolet to blue.

Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

NASA Astrophysics Data System (ADS)

Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

2017-08-01

Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

Red Light-Emitting Diode Based on Blue InGaN Chip with CdTe x S(1 - x) Quantum Dots

NASA Astrophysics Data System (ADS)

Wang, Rongfang; Wei, Xingming; Qin, Liqin; Luo, Zhihui; Liang, Chunjie; Tan, Guohang

2017-01-01

Thioglycolic acid-capped CdTe x S(1 - x) quantum dots (QDs) were synthesized through a one-step approach in an aqueous medium. The CdTe x S(1 - x) QDs played the role of a color conversion center. The structural and luminescent properties of the obtained CdTe x S(1 - x) QDs were investigated. The fabricated red light-emitting hybrid device with the CdTe x S(1 - x) QDs as the phosphor and a blue InGaN chip as the excitation source showed a good luminance. The Commission Internationale de L'Eclairage coordinates of the light-emitting diode (LED) at (0.66, 0.29) demonstrated a red LED. Results showed that CdTe x S(1 - x) QDs can be excited by blue or near-UV regions. This feature presents CdTe x S(1 - x) QDs with an advantage over wavelength converters for LEDs.

Light-emitting diodes based on colloidal silicon quantum dots

NASA Astrophysics Data System (ADS)

Zhao, Shuangyi; Liu, Xiangkai; Pi, Xiaodong; Yang, Deren

2018-06-01

Colloidal silicon quantum dots (Si QDs) hold great promise for the development of printed Si electronics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for optoelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes (LEDs) play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD surface and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.

Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes.

PubMed

Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

2018-06-15

Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W -1 , and good working stability, thus indicating a promising potential for practical lighting applications.

Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

2018-06-01

Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

A Laboratory-Based Course in Display Technology

ERIC Educational Resources Information Center

Sarik, J.; Akinwande, A. I.; Kymissis, I.

2011-01-01

A laboratory-based class in flat-panel display technology is presented. The course introduces fundamental concepts of display systems and reinforces these concepts through the fabrication of three display devices--an inorganic electroluminescent seven-segment display, a dot-matrix organic light-emitting diode (OLED) display, and a dot-matrix…

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE PAGES

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin; ...

2017-08-25

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Tricolor White-Light-Emitting Carbon Dots with Multiple-Cores@Shell Structure for WLED Application.

PubMed

Zhang, Tianyi; Zhao, Feifei; Li, Li; Qi, Bin; Zhu, Dongxia; Lü, Jianhua; Lü, Changli

2018-06-13

The past few years have witnessed the rapid development of carbon dots (CDs) due to their outstanding optical properties and a wide range of applications. However, the design and control of CDs with long-wavelength multicolor emission are still huge challenges to be addressed for their practical use in different fields. Here, novel nitrogen-doped multiple-core@shell-structured AC-CDs with tricolor emissions of red, green, and blue were constructed via one-pot hydrothermal method from 5-amino-1,10-phenanthroline and citric acid as reactants and the growth process of AC-CDs was monitored with the reaction time in the synthetic system. The origin of different fluorescence emissions was explored using the unique coordination ability of the surface groups of AC-CDs. An obvious concentration dependence of fluorescent properties was observed for the as-prepared AC-CDs, and a highly fluorescent quantum yield (QY) of 67% for red emission at 630 nm can be obtained by adjusting concentration of AC-CDs. The pure white-light emission (0.33, 0.33; Commission Internationale de l'Elcairage coordinate) was carried out from single carbon dot with QY of 29% through regulation of the excitation and concentration of multiple-core@shell-structured AC-CDs. In addition, because of their excellent photoluminescent properties, the white-emitting AC-CDs as emitting phosphor can be easily used in the fabrication of white-light-emitting diode with good anti-photobleaching and temperature stability.

One-Step Preparation of Long-Term Stable and Flexible CsPbBr3 Perovskite Quantum Dots/Ethylene Vinyl Acetate Copolymer Composite Films for White Light-Emitting Diodes.

PubMed

Li, Yang; Lv, Ying; Guo, Ziquan; Dong, Liubing; Zheng, Jianghui; Chai, Chufen; Chen, Nan; Lu, Yijun; Chen, Chao

2018-05-09

CsPbBr 3 perovskite quantum dots (PQDs)/ethylene vinyl acetate (EVA) composite films were prepared via a one-step method; on the basis of this, both supersaturated recrystallization of CsPbBr 3 PQDs and dissolution of EVA were realized in toluene. The prepared films display outstanding green-emitting performance with high color purity of 92% and photoluminescence (PL) quantum yield of 40.5% at appropriate CsPbBr 3 PQD loading. They possess long-term stable luminescent properties in the air and in water, benefiting from the effective protection of CsPbBr 3 PQDs by the EVA matrix. Besides, the prepared CsPbBr 3 PQDs/EVA films are flexible enough to be repeatedly bent for 1000 cycles while keeping unchanged the PL intensity. The optical properties of the CsPbBr 3 PQDs/EVA films in white light-emitting diodes were also studied by experiments and theoretical simulation. Overall, facile preparation process, good long-term stability, and high flexibility allow our green-emitting CsPbBr 3 PQDs/EVA films to be applied in lighting applications and flexible displays.

Red carbon dots-based phosphors for white light-emitting diodes with color rendering index of 92.

PubMed

Zhai, Yuechen; Wang, Yi; Li, Di; Zhou, Ding; Jing, Pengtao; Shen, Dezhen; Qu, Songnan

2018-05-29

Exploration of solid-state efficient red emissive carbon dots (CDs) phosphors is strongly desired for the development of high performance CDs-based white light-emitting diodes (WLEDs). In this work, enhanced red emissive CDs-based phosphors with photoluminescence quantum yields (PLQYs) of 25% were prepared by embedding red emissive CDs (PLQYs of 23%) into polyvinyl pyrrolidone (PVP). Because of the protection of PVP, the phosphors could preserve strong luminescence under long-term UV excitation or being mixed with conventional packaging materials. By applying the red emissive phosphors as the color conversion layer, WLEDs with high color rendering index of 92 and color coordinate of (0.33, 0.33) are fabricated. Copyright © 2018 Elsevier Inc. All rights reserved.

Synthesis of Carbon Dots with Multiple Color Emission by Controlled Graphitization and Surface Functionalization.

PubMed

Miao, Xiang; Qu, Dan; Yang, Dongxue; Nie, Bing; Zhao, Yikang; Fan, Hongyou; Sun, Zaicheng

2018-01-01

Multiple-color-emissive carbon dots (CDots) have potential applications in various fields such as bioimaging, light-emitting devices, and photocatalysis. The majority of the current CDots to date exhibit excitation-wavelength-dependent emissions with their maximum emission limited at the blue-light region. Here, a synthesis of multiple-color-emission CDots by controlled graphitization and surface function is reported. The CDots are synthesized through controlled thermal pyrolysis of citric acid and urea. By regulating the thermal-pyrolysis temperature and ratio of reactants, the maximum emission of the resulting CDots gradually shifts from blue to red light, covering the entire light spectrum. Specifically, the emission position of the CDots can be tuned from 430 to 630 nm through controlling the extent of graphitization and the amount of surface functional groups, COOH. The relative photoluminescence quantum yields of the CDots with blue, green, and red emission reach up to 52.6%, 35.1%, and 12.9%, respectively. Furthermore, it is demonstrated that the CDots can be uniformly dispersed into epoxy resins and be fabricated as transparent CDots/epoxy composites for multiple-color- and white-light-emitting devices. This research opens a door for developing low-cost CDots as alternative phosphors for light-emitting devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Physics of Ultracold Sr2 Molecules: Optical Production and Precision Measurement

NASA Astrophysics Data System (ADS)

Osborn, Christopher Butler

Colloidal quantum dots have desirable optical properties which can be exploited to realize a variety of photonic devices and functionalities. However, colloidal dots have not had a pervasive utility in photonic devices because of the absence of patterning methods. The electronic chip industry is highly successful due to the well-established lithographic procedures. In this thesis we borrow ideas from the semiconductor industry to develop lithographic techniques that can be used to pattern colloidal quantum dots while ensuring that the optical properties of the quantum dots are not affected by the process. In this thesis we have developed colloidal quantum dot based waveguide structures for amplification and switching applications for all-optical signal processing. We have also developed colloidal quantum dot based light emitting diodes. We successfully introduced CdSe/ZnS quantum dots into a UV curable photo-resist, which was then patterned to realize active devices. In addition, "passive" devices (devices without quantum dots) were integrated to "active" devices via waveguide couplers. Use of photo-resist devices offers two distinct advantages. First, they have low scattering loss and secondly, they allow good fiber to waveguide coupling efficiency due to the low refractive index which allows for large waveguide cross-sections while supporting single mode operation. Practical planar photonic devices and circuits incorporating both active and passive structures can now be realized, now that we have patterning capabilities of quantum dots while maintaining the original optical attributes of the system. In addition to the photo-resist host, we also explored the incorporation of colloidal quantum dots into a dielectric silicon dioxide and silicon nitride one-dimensional microcavity structures using low temperature plasma enhanced chemical vapor deposition. This material system can be used to realize microcavity light emitting diodes that can be realized on any substrate. As a proof of concept demonstration we show a 1550 nm emitting all-dielectric vertical cavity structure embedded with PbS quantum dots. Enhancement in spontaneous emission from the dots embedded in the microcavity is also demonstrated.

Site-controlled InGaN/GaN single-photon-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu; Teng, Chu-Hsiang

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

NASA Astrophysics Data System (ADS)

Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo; Gregersen, Niels; Bellet-Amalric, Edith; Nogues, Gilles; Kheng, Kuntheak

2017-11-01

Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA =0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining microphotoluminescence, decay time measurements, and numerical simulations, we obtain a fourfold increase in the collected photoluminescence from the quantum dot. We show that this improvement is due to an increase of the quantum-dot emission rate and a redirection of the emitted light. Our ex situ fabrication technique allows a precise and reproducible fabrication on a large scale. Its improved extraction efficiency is compared to state-of-the-art top-down devices.

Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

NASA Astrophysics Data System (ADS)

Dong, Yajie

2017-02-01

Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum Dot Light Emitting Diodes. SID Symp. Dig. Tech. Pap. 47, 344-346 (2016). [4] H. Chen, J. He, J. S. Chen, S. T. Wu and Y. J. Dong, High Efficacy, High Color Quality Hybrid White OLEDs Incorporating Red Quantum Dots with Narrow Emission Bands. SID Symp. Dig. Tech. Pap. 47, 50-52 (2016).

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot LED with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21 % at a bias of 6 V and outstanding operational stability, with a L70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under amore » constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 quantum dots for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.« less

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

DOE PAGES

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; ...

2017-09-11

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot LED with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21 % at a bias of 6 V and outstanding operational stability, with a L70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under amore » constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 quantum dots for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.« less

Emitting color tunable carbon dots by adjusting solvent towards light-emitting devices

NASA Astrophysics Data System (ADS)

Zhu, Jinyang; Bai, Xue; Bai, Jialin; Pan, Gencai; Zhu, Yongsheng; Zhai, Yue; Shao, He; Chen, Xu; Dong, Biao; Zhang, Hanzhuang; Song, Hongwei

2018-02-01

Carbon dots (CDs), one of the most significant classes of carbon-based nanophosphors, have attracted extensive attention in recent years. However, few attempts have been reported for realizing CDs with tunable emissions, especially for obtaining the red-light emissions with high photoluminescence quantum yields. Herein, we synthesized CDs with different chromatic blue, green and red emissions by facilely changing the reaction solvent during hydrothermal conditions. The photoluminescence quantum yields of 34%, 19% and 47% for the blue, green and red emissions, respectively, were achieved. Furthermore, the solid-state CD/PVA composite films were constructed through mixing the CDs with PVA polymer, in which the self-quenching of photoluminescence of CDs had been successfully avoided benefiting from the formation of hydrogen bonds between the CDs and PVA molecules. Finally, the warm white light emitting diode (WLED) was fabricated by integrating CD/PVA film on a UV-LED chip. The WLED exhibited the Commission International de l’Eclairage coordinates (CIE) of (0.38, 0.34), correlated color temperature of 3913 K and color rendering index of 91, respectively, which were comparable with the commercial WLEDs.

Rapid microwave-assisted synthesis of highly luminescent nitrogen-doped carbon dots for white light-emitting diodes

NASA Astrophysics Data System (ADS)

Wang, Yaling; Zheng, Jingxia; Wang, Junli; Yang, Yongzhen; Liu, Xuguang

2017-11-01

Highly luminescent nitrogen-doped carbon dots (N-CDs) were synthesized rapidly by one-step microwave-assisted hydrothermal method using citric acid as carbon source and ethylenediamine as dopant. The influences of reaction temperature, reaction time and raw material ratio on the fluorescence performance of N-CDs were investigated. Then N-CDs with the highest quantum yield were selected as fluorescent materials for fabricating white light-emitting diodes (LEDs). Highly luminescent N-CDs with the quantum yield of 75.96% and blue-to-red spectral composition of 51.48% were obtained at the conditions of 180 °C, 8 min and the molar ratio of citric acid to ethylenediamine 2:1. As-prepared highly luminescent N-CDs have an average size of 6.06 nm, possess extensive oxygen- and nitrogen-containing functional groups on their surface, and exhibit strong absorption in ultraviolet region. White LEDs based on the highly luminescent N-CDs emit warm white light with color coordinates of (0.42, 0.40) and correlated color temperature of 3416 K.

Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.

PubMed

Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J

2018-06-11

Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.

Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes.

PubMed

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young; Lee, Byeongdu; Lee, Dong Ryeol

2017-09-07

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX 3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting in stronger quantum confinement. The cubic-phase perovskite NCs formed despite the fact that the reaction temperatures increased from 140 to 180 °C; however, monodispersive NC cubes that are required for densely packing self-assembly film were formed only at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

Engineered core/shell quantum dots as phosphors for solid-state lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klimov, Victor Ivanovich; Pietryga, Jeffrey Michael; McDaniel, Hunter

2015-01-14

Light-emitting diodes (LEDs) for solid state light ing (SSL) typically combine a blue or near- ultraviolet drive LED with one or more dow nconverting phosphors to produce “white” light. Further advances in both efficiency and wh ite-light quality will re quire new phosphors with narrow-band, highly efficient emission, particul arly in the red. A team led by principal investigator Dr. Victor Klim ov of Los Alamos National Labo ratory proposes to develop engineered semiconductor nanocrystal quantum dots (QDs) that combine optimal luminescent properties with long-term stability under ty pical downconverting conditions to enable new performance levels in SSL. The whitemore » LED phosphor industry is estimated to have sales of roughly $400 million in 2018 and would significantly benefit from the development of bright and narrow red-emitting QD phosphors because they woul d enable warmer whites without wasting energy by emission of light beyond the response of the human eye. In order to capitalize on the market opportunity, the LANL team is partnering with a local company called UbiQD that will facilitate US manufacturing.« less

Silicon Based Colloidal Quantum Dot and Nanotube Lasers

DTIC Science & Technology

2013-03-01

carrier density is theoretically and experimentally derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting...diodes and GaN single nanowire photonic crystal laser on silicon characterized by a lasing transition at λ=371.3 nm with a linewidth of 0.55 nm. The...derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting diodes and GaN single nanowire photonic crystal

Microwave-assisted one-step synthesis of white light-emitting carbon dot suspensions

NASA Astrophysics Data System (ADS)

Vanessa, Hinterberger; Wenshuo, Wang; Cornelia, Damm; Simon, Wawra; Martin, Thoma; Wolfgang, Peukert

2018-06-01

In this contribution, we demonstrate that an aqueous solution with adjustable fluorescent color, including white light emission, can be achieved by a rapid one-step microwave synthesis method resulting in a mixture of blue-emitting carbon dots (CDs) and the yellow-emitting 2,3-diaminophenazine (DAP). Aqueous mixtures of o-phenylene-diamine (oPD) and citric acid (CA) are used as precursors. The resulting product structures are analyzed by FT-IR and NMR spectroscopy and the size of the resulting CDs is determined by atomic force microscopy to be 1.1 ± 0.3 nm. The synthesized solution exhibits two fluorescence emission peaks at 430 and 560 nm, which were found to originate from the CDs and DAP, respectively. The intensity ratio of both fluorescence peaks depends on pH, which is driven by the protonation state of DAP. In consequence, the fluorescence emission color of the CD solution can be tuned precisely and reproducibly from blue to white to yellow by careful control of the pH. Finally, at a pH level of 5.4, at which there is equal blue and yellow emission intensity, a white light emitting solution can be successfully produced in a very fast and simple synthesis procedure.

White light-emitting nanocomposites based on an oxadiazole-carbazole copolymer (POC) and InP/ZnS quantum dots

NASA Astrophysics Data System (ADS)

Bruno, Annalisa; Borriello, Carmela; Di Luccio, Tiziana; Nenna, Giuseppe; Sessa, Lucia; Concilio, Simona; Haque, Saif A.; Minarini, Carla

2013-11-01

In this work, we studied energetic and optical proprieties of a polyester-containing oxadiazole and carbazole units that we will indicate as POC. This polymer is characterized by high photoluminescence activity in the blue region of the visible spectrum, making it suitable for the development of efficient white-emitting organic light emission devices. Moreover, POC polymer has been combined with two red emitters InP/ZnS quantum dots (QDs) to obtain nanocomposites with wide emission spectra. The two types of QDs have different absorption wavelengths: 570 nm [InP/ZnS(570)] and 627 nm [InP/ZnS(627)] and were inserted in the polymer at different concentrations. The optical properties of the nanocomposites have been investigated and compared to the ones of the pure polymer. Both spectral and time resolved fluorescence measurements show an efficient energy transfer from the polymer to QDs, resulting in white-emitting nanocomposites.

Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots.

PubMed

Huber, Daniel; Reindl, Marcus; Huo, Yongheng; Huang, Huiying; Wildmann, Johannes S; Schmidt, Oliver G; Rastelli, Armando; Trotta, Rinaldo

2017-05-26

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.

Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

PubMed Central

Huber, Daniel; Reindl, Marcus; Huo, Yongheng; Huang, Huiying; Wildmann, Johannes S.; Schmidt, Oliver G.; Rastelli, Armando; Trotta, Rinaldo

2017-01-01

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g(2)(0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies. PMID:28548081

Quantum Dotting the "i" of Inquiry: A Guided Inquiry Approach to Teaching Nanotechnology

ERIC Educational Resources Information Center

Laubach, Timothy A.; Elizondo, Lee A.; McCann, Patrick J.; Gilani, Shahryar

2010-01-01

When illuminating four "mystery" vials of nanoparticle solution with a 405-nm light emitting diode (LED), four distinct colors related to the peak wavelength of fluorescent emission can be observed. This phenomenon perplexes high school physics students and leads to the subsequent exploratory question, "Why are the four vials emitting a different…

Full spectral optical modeling of quantum-dot-converted elements for light-emitting diodes considering reabsorption and reemission effect.

PubMed

Li, Jia-Sheng; Tang, Yong; Li, Zong-Tao; Cao, Kai; Yan, Cai-Man; Ding, Xin-Rui

2018-07-20

Quantum dots (QDs) have attracted significant attention in light-emitting diode (LED) illumination and display applications, owing to their high quantum yield and unique spectral properties. However, an effective optical model of quantum-dot-converted elements (QDCEs) for (LEDs) that entirely considers the reabsorption and reemission effect is lacking. This suppresses the design of QDCE structures and further investigation of light-extraction/conversion mechanisms in QDCEs. In this paper, we proposed a full spectral optical modeling method for QDCEs packaged in LEDs, entirely considering the reabsorption and reemission effect, and its results are compared with traditional models without reabsorption or reemission. The comparisons indicate that the QDCE absorption loss of QD emission light is a major factor decreasing the radiant efficacy of LEDs, which should be considered when designing QDCE structures. According to the measurements of fabricated LEDs, only calculation results that entirely consider reabsorption and reemission show good agreement with experimental radiant efficacy, spectra, and peak wavelength at the same down-conversion efficiency. Consequently, it is highly expected that QDCE will be modeled considering the reabsorption and reemission events. This study provides a simple and effective modeling method for QDCEs, which shows great potential for their structure designs and fundamental investigations.

Full spectral optical modeling of quantum-dot-converted elements for light-emitting diodes considering reabsorption and reemission effect

NASA Astrophysics Data System (ADS)

Li, Jia-Sheng; Tang, Yong; Li, Zong-Tao; Cao, Kai; Yan, Cai-Man; Ding, Xin-Rui

2018-07-01

Quantum dots (QDs) have attracted significant attention in light-emitting diode (LED) illumination and display applications, owing to their high quantum yield and unique spectral properties. However, an effective optical model of quantum-dot-converted elements (QDCEs) for (LEDs) that entirely considers the reabsorption and reemission effect is lacking. This suppresses the design of QDCE structures and further investigation of light-extraction/conversion mechanisms in QDCEs. In this paper, we proposed a full spectral optical modeling method for QDCEs packaged in LEDs, entirely considering the reabsorption and reemission effect, and its results are compared with traditional models without reabsorption or reemission. The comparisons indicate that the QDCE absorption loss of QD emission light is a major factor decreasing the radiant efficacy of LEDs, which should be considered when designing QDCE structures. According to the measurements of fabricated LEDs, only calculation results that entirely consider reabsorption and reemission show good agreement with experimental radiant efficacy, spectra, and peak wavelength at the same down-conversion efficiency. Consequently, it is highly expected that QDCE will be modeled considering the reabsorption and reemission events. This study provides a simple and effective modeling method for QDCEs, which shows great potential for their structure designs and fundamental investigations.

ORNL Demonstrates Large-Scale Technique to Produce Quantum Dots

ScienceCinema

Graham, David; Moon, Ji-Won

2018-01-16

A method to produce significant amounts of semiconducting nanoparticles for light-emitting displays, sensors, solar panels and biomedical applications has gained momentum with a demonstration by researchers at Oak Ridge National Laboratory.

Ultrastable, highly luminescent quantum dot composites based on advanced surface manipulation strategy for flexible lighting-emitting.

PubMed

Kong, Lingqing; Zhang, Lin; Meng, Zhaohui; Xu, Chuan; Lin, Naibo; Liu, Xiang-Yang

2018-08-03

Although quantum dots (QDs) have remarkable potential application in flexible light emitting diodes (LED), the loss of solvent-protected QDs leads to low quantum yield (QY) and poor stability, severely restricting the development. Flexible QD LEDs (Q-LEDs) with three primary colors were fabricated by mixing CdS/ZnS, CdSe@ZnS/ZnS, and CdSe/CdS QDs with polydimethylsiloxane (PDMS) by in situ hydrosilylation based surface manipulation strategy, which endows the device with highly ultrastable and luminescent performance. The surface manipulation strategy mainly includes the control of solvent dosage, purification times of QDs, concentration of QDs in PDMS, and oxidation on the preparation process of the QDs and PDMS composites. The highest QY of CdSe@ZnS/ZnS-PDMS composite is 82.03%, higher than the QY (80%) of the QD solution. After UV bleaching, organic solvents (acetone, ethanol and water), and heating treatment, the QYs of the QDs and PDMS maintain a high value, manifesting their good stability. Q-LED hybrid light-emitting devices were further fabricated by a molding technique demonstrating satisfied current and thermal stability. Flexible Q-LEDs can be expended to other shapes, such as fibers and blocks, indicating the huge potential of QD-polymer composites for light sources and displays etc.

Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices

PubMed Central

Kang, Byoung-Ho; Lee, Jae-Sung; Lee, Sang-Won; Kim, Sae-Wan; Lee, Jun-Woo; Gopalan, Sai-Anand; Park, Ji-Sub; Kwon, Dae-Hyuk; Bae, Jin-Hyuk; Kim, Hak-Rin; Kang, Shin-Won

2016-01-01

We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br-) in cetyl trimethylammonium bromide (CTAB). The Br- ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m2 and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface. PMID:27686147

Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

NASA Astrophysics Data System (ADS)

Fan, Bingfeng; Yan, Linchao; Lao, Yuqin; Ma, Yanfei; Chen, Zimin; Ma, Xuejin; Zhuo, Yi; Pei, Yanli; Wang, Gang

2017-08-01

A method for preparing a quantum dot (QD)-white light-emitting diode (WLED) is reported. Holes were etched in the SiO2 layer deposited on the sapphire substrate of the flip-chip LED by inductively coupled plasma, and these holes were then filled with QDs. An ultraviolet-curable resin was then spin-coated on top of the QD-containing SiO2 layer, and the resin was cured to act as a protecting layer. The reflective sidewall structure minimized sidelight leakage. The fabrication of the QD-WLED is simple in preparation and compatible with traditional LED processes, which was the minimum size of the WLED chip-scale integrated package. InP/ZnS core-shell QDs were used as the converter in the WLED. A blue light-emitting diode with a flip-chip structure was used as the excitation source. The QD-WLED exhibited color temperatures from 5900 to 6400 K and Commission Internationale De L'Elcairage color coordinates from (0.315, 0.325) to (0.325, 0.317), under drive currents from 100 to 400 mA. The QD-WLED exhibited stable optoelectronic properties.

Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Feng; Wang, Yaling; Miao, Yanqin

Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral compositionmore » of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.« less

ZnCuInS/ZnSe/ZnS quantum dot-based downconversion light-emitting diodes and their thermal effect

DOE PAGES

Liu, Wenyan; Zhang, Yu; Wang, Dan; ...

2015-08-13

The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half-maximum (FWHM) and power efficiencies (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed littlemore » due to the low emission temperature coefficients of 0.022, 0.050 and 0.068 nm/°C for red-, yellow- and green-emitting ZnCuInS/ZnSe/ZnS QDs. Lastly this indicates that ZnCuInS/ZnSe/ZnS QDs are more suitable for down-conversion LEDs compared to CdSe QDs.« less

Linearly polarized light emission from quantum dots with plasmonic nanoantenna arrays.

PubMed

Ren, Mengxin; Chen, Mo; Wu, Wei; Zhang, Lihui; Liu, Junku; Pi, Biao; Zhang, Xinzheng; Li, Qunqing; Fan, Shoushan; Xu, Jingjun

2015-05-13

Polarizers provide convenience in generating polarized light, meanwhile their adoption raises problems of extra weight, cost, and energy loss. Aiming to realize polarizer-free polarized light sources, herein, we present a plasmonic approach to achieve direct generation of linearly polarized optical waves at the nanometer scale. Periodic slot nanoantenna arrays are fabricated, which are driven by the transition dipole moments of luminescent semiconductor quantum dots. By harnessing interactions between quantum dots and scattered fields from the nanoantennas, spontaneous emission with a high degree of linear polarization is achieved from such hybrid antenna system with polarization perpendicular to antenna slot. We also demonstrate that the polarization is engineerable in aspects of both spectrum and magnitude by tailoring plasmonic resonance of the antenna arrays. Our findings will establish a basis for the development of innovative polarized light-emitting devices, which are useful in optical displays, spectroscopic techniques, optical telecommunications, and so forth.

Improving lumen maintenance by nanopore array dispersed quantum dots for on-chip light emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Quan; Yang, Fan; Wan, Renzhuo; Fang, Dong

2017-12-01

The temperature stability of quantum dots (QDs), which is crucial for integrating into high power light-emitting diodes (LEDs) in the on-chip configuration, needs to be further improved. In this letter, we report warm white LEDs, where CdSe/ZnS nanoparticles were incorporated into a porous anodic alumina (PAA) matrix with a chain structure by the self-assembly method. Experiments demonstrate that the QD concentration range in toluene solvent from 1% mg/μl to 1.2% mg/μl in combination with the PAA matrix shows the best luminous property. To verify the reliability of the as-prepared device, a comparison experiment was conducted. It indicates excellent lumen maintenance of the light source and less chromaticity coordinate shift under accelerated life testing conditions. Experiments also prove that optical depreciation was only up to 4.6% of its initial value after the 1500 h aging test at the junction temperature of 76 °C.

Fully Transparent Quantum Dot Light-Emitting Diode with a Laminated Top Graphene Anode.

PubMed

Yao, Li; Fang, Xin; Gu, Wei; Zhai, Wenhao; Wan, Yi; Xie, Xixi; Xu, Wanjin; Pi, Xiaodong; Ran, Guangzhao; Qin, Guogang

2017-07-19

A new method to employ graphene as top electrode was introduced, and based on that, fully transparent quantum dot light-emitting diodes (T-QLEDs) were successfully fabricated through a lamination process. We adopted the widely used wet transfer method to transfer bilayer graphene (BG) on polydimethylsiloxane/polyethylene terephthalate (PDMS/PET) substrate. The sheet resistance of graphene reduced to ∼540 Ω/□ through transferring BG for 3 times on the PDMS/PET. The T-QLED has an inverted device structure of glass/indium tin oxide (ITO)/ZnO nanoparticles/(CdSSe/ZnS quantum dots (QDs))/1,1-bis[(di-4-tolylamino)phenyl] cyclohexane (TAPC)/MoO 3 /graphene/PDMS/PET. The graphene anode on PDMS/PET substrate can be directly laminated on the MoO 3 /TAPC/(CdSSe/ZnS QDs)/ZnO nanoparticles/ITO/glass, which relied on the van der Waals interaction between the graphene/PDMS and the MoO 3 . The transmittance of the T-QLED is 79.4% at its main electroluminescence peak wavelength of 622 nm.

Quantum dot light emitting devices for photomedical applications.

PubMed

Chen, Hao; He, Juan; Lanzafame, Raymond; Stadler, Istvan; Hamidi, Hamid El; Liu, Hui; Celli, Jonathan; Hamblin, Michael R; Huang, Yingying; Oakley, Emily; Shafirstein, Gal; Chung, Ho-Kyoon; Wu, Shin-Tson; Dong, Yajie

2017-03-01

While OLEDs have struggled to find a niche lighting application that can fully take advantage of their unique form factors as thin, flexible, lightweight and uniformly large-area luminaire, photomedical researchers have been in search of low-cost, effective illumination devices with such form factors that could facilitate widespread clinical applications of photodynamic therapy (PDT) or photobiomodulation (PBM). Although existing OLEDs with either fluorescent or phosphorescent emitters cannot achieve the required high power density at the right wavelength windows for photomedicine, the recently developed ultrabright and efficient deep red quantum dot light emitting devices (QLEDs) can nicely fit into this niche. Here, we report for the first time the in-vitro study to demonstrate that this QLED-based photomedical approach could increase cell metabolism over control systems for PBM and kill cancerous cells efficiently for PDT. The perspective of developing wavelength-specific, flexible QLEDs for two critical photomedical fields (wound repair and cancer treatment) will be presented with their potential impacts summarized. The work promises to generate flexible QLED-based light sources that could enable the widespread use and clinical acceptance of photomedical strategies including PDT and PBM.

Quantum dot light emitting devices for photomedical applications

PubMed Central

Chen, Hao; He, Juan; Lanzafame, Raymond; Stadler, Istvan; Hamidi, Hamid El; Liu, Hui; Celli, Jonathan; Hamblin, Michael R.; Huang, Yingying; Oakley, Emily; Shafirstein, Gal; Chung, Ho-Kyoon; Wu, Shin-Tson; Dong, Yajie

2017-01-01

While OLEDs have struggled to find a niche lighting application that can fully take advantage of their unique form factors as thin, flexible, lightweight and uniformly large-area luminaire, photomedical researchers have been in search of low-cost, effective illumination devices with such form factors that could facilitate widespread clinical applications of photodynamic therapy (PDT) or photobiomodulation (PBM). Although existing OLEDs with either fluorescent or phosphorescent emitters cannot achieve the required high power density at the right wavelength windows for photomedicine, the recently developed ultrabright and efficient deep red quantum dot light emitting devices (QLEDs) can nicely fit into this niche. Here, we report for the first time the in-vitro study to demonstrate that this QLED-based photomedical approach could increase cell metabolism over control systems for PBM and kill cancerous cells efficiently for PDT. The perspective of developing wavelength-specific, flexible QLEDs for two critical photomedical fields (wound repair and cancer treatment) will be presented with their potential impacts summarized. The work promises to generate flexible QLED-based light sources that could enable the widespread use and clinical acceptance of photomedical strategies including PDT and PBM. PMID:28867926

Single-mode light source fabrication based on colloidal quantum dots

NASA Astrophysics Data System (ADS)

Xu, Jianfeng; Chen, Bing; Baig, Sarfaraz; Wang, Michael R.

2009-02-01

There are huge market demands for innovative, cheap and efficient light sources, including light emitting devices, such as LEDs and lasers. However, the light source development in the visible spectral range encounters significant difficulties these years. The available visible wavelength LEDs or lasers are few, large and expensive. The main challenge lies at the lack of efficient light media. Semiconductor nanocrystal quantum dots (QDs) have recently commanded considerable attention. As a result of quantum confinement effect, the emission color of these QDs covers the whole visible spectral range and can be modified dramatically by simply changing their size. Such spectral tunability, together with large photoluminescence quantum yield and photostability, make QDs attractive for potential applications in a variety of light emitting technologies. However, there are still several technical problems that hinder their application as light sources. One main issue is how to fabricate these QDs into a solid state device while still retaining their original optical emission properties. A vacuum assisted micro-fluidic fabrication of guided wave devices has demonstrated low waveguide propagation loss, lower crosstalk, and improved waveguide structures. We report herein the combination of the excellent emission properties of QDs and novel vacuum assisted micro-fluidic photonic structure fabrication technique to realize single-mode efficient light sources.

White/blue-emitting, water-dispersible CdSe quantum dots prepared by counter ion-induced polymer collapse

NASA Astrophysics Data System (ADS)

Wang, Jing; Goh, Jane Betty; Goh, M. Cynthia; Giri, Neeraj Kumar; Paige, Matthew F.

2015-09-01

The synthesis and characterization of water-dispersible, luminescent CdSe/ZnS semiconductor quantum dots that exhibit nominal "white" fluorescence emission and have potential applications in solid-state lighting is described. The nanomaterials, prepared through counter ion-induced collapse and UV cross-linking of high-molecular weight polyacrylic acid in the presence of appropriate aqueous inorganic ions, were of ∼2-3 nm diameter and could be prepared in gram quantities. The quantum dots exhibited strong luminescence emission in two bands, the first in the blue-region (band edge) of the optical spectrum and the second, a broad emission in the red-region (attributed to deep trap states) of the optical spectrum. Because of the relative strength of emission of the band edge and deep trap state luminescence, it was possible to achieve visible white luminescence from the quantum dots in aqueous solution and in dried, solid films. The optical spectroscopic properties of the nanomaterials, including ensemble and single-molecule spectroscopy, was performed, with results compared to other white-emitting quantum dot systems described previously in the literature.

External modes in quantum dot light emitting diode with filtered optical feedback

NASA Astrophysics Data System (ADS)

Al Husseini, Hussein B.; Al Naimee, Kais A.; Al-Khursan, Amin H.; Khedir, Ali. H.

2016-06-01

This research reports a theoretical investigation on the role of filtered optical feedback (FOF) in the quantum dot light emitting diode (QD-LED). The underlying dynamics is affected by a sidle node, which returns to an elliptical shape when the wetting layer (WL) is neglected. Both filter width and time delay change the appearance of different dynamics (chaotic and mixed mode oscillations, MMOs). The results agree with the experimental observations. Here, the fixed point analysis for QDs was done for the first time. For QD-LED with FOF, the system transits from the coherence collapse case in conventional optical feedback to a coherent case with a filtered mode in FOF. It was found that the WL washes out the modes which is an unexpected result. This may attributed to the longer capture time of WL compared with that between QD states. Thus, WL reduces the chaotic behavior.

Cadmium-free quantum dot light emitting devices: energy-transfer realizing pure blue emission.

PubMed

Ji, Wenyu; Jing, Pengtao; Fan, Yi; Zhao, Jialong; Wang, Yunjun; Kong, Xianggui

2013-01-01

In this study, deep blue, pure electroluminescence (EL) at 441.5 nm from a ZnSe/ZnS quantum dot light-emitting device (QD-LED) is obtained by using poly (4-butylphenyl-diphenyl-amine) (poly-TPD) as the hole-transport layer (HTL) to open up the channel for energy transfer from poly-TPD to QDs. The emission originating from HTL is observed in the QD-LED with N,N'-bis (tolyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine functionalized with two styryl groups (2-TPD) as the HTL due to inefficient energy-transfer from 2-TPD to QDs. The poly-TPD based device exhibits color-saturated blue emission with a narrow spectral bandwidth of full width at half maximum (~17.2 nm). These results explore the operating mechanism of the QD EL and signify a remarkable progress in deep blue QD-LEDs based on environmental-friendly QD materials.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

PubMed

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Red, green, and blue luminescence by carbon dots: full-color emission tuning and multicolor cellular imaging.

PubMed

Jiang, Kai; Sun, Shan; Zhang, Ling; Lu, Yue; Wu, Aiguo; Cai, Congzhong; Lin, Hengwei

2015-04-27

A facile approach for preparation of photoluminescent (PL) carbon dots (CDs) is reported. The three resulting CDs emit bright and stable red, green and blue (RGB) colors of luminescence, under a single ultraviolet-light excitation. Alterations of PL emission of these CDs are tentatively proposed to result from the difference in their particle size and nitrogen content. Interestingly, up-conversion (UC)PL of these CDs is also observed. Moreover, flexible full-color emissive PVA films can be achieved through mixing two or three CDs in the appropriate ratios. These CDs also show low cytotoxicity and excellent cellular imaging capability. The facile preparation and unique optical features make these CDs potentially useful in numerous applications such as light-emitting diodes, full-color displays, and multiplexed (UC)PL bioimaging. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

External modes in quantum dot light emitting diode with filtered optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al Husseini, Hussein B.; Department of Physics, College of Science, University of Baghdad, Al Jadiriyah, Baghdad; Al Naimee, Kais A.

2016-06-14

This research reports a theoretical investigation on the role of filtered optical feedback (FOF) in the quantum dot light emitting diode (QD-LED). The underlying dynamics is affected by a sidle node, which returns to an elliptical shape when the wetting layer (WL) is neglected. Both filter width and time delay change the appearance of different dynamics (chaotic and mixed mode oscillations, MMOs). The results agree with the experimental observations. Here, the fixed point analysis for QDs was done for the first time. For QD-LED with FOF, the system transits from the coherence collapse case in conventional optical feedback to amore » coherent case with a filtered mode in FOF. It was found that the WL washes out the modes which is an unexpected result. This may attributed to the longer capture time of WL compared with that between QD states. Thus, WL reduces the chaotic behavior.« less

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

PubMed Central

2012-01-01

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm. PMID:23134721

Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, Nosoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

2015-06-01

Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes.

PubMed

Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, NoSoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

2015-06-11

Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

Nano-Dots Enhanced White Organic Light-Emitting Diodes

DTIC Science & Technology

2006-11-30

phenolato)-aluminum (BAlq) and a 20 nm electron-transporting layer of tris(8-hydroxyl-quino- line)-aluminum ( Alq3 ) were sequentially deposited at 2...resultant red OLED at emission. The device composes structure of ITO/PEDOT: PSS/CBP: 6 wt% Btp2Ir(acac): x wt% CdSe quantum dots/BAlq/ Alq3 /LiF/ Al...The device composes struc- ture of ITO/PEDOT: PSS/CBP: 6 wt% Ir(ppy)3: x wt% CdSe quantum dots/BAlq/ Alq3 /LiF/ Al. Figure 8 shows the effect of

Theory of few photon dynamics in light emitting quantum dot devices

NASA Astrophysics Data System (ADS)

Carmele, Alexander; Richter, Marten; Sitek, Anna; Knorr, Andreas

2009-10-01

We present a modified cluster expansion to describe single-photon emitters in a semiconductor environment. We calculate microscopically to what extent semiconductor features in quantum dot-wetting layer systems alter the exciton and photon dynamics in comparison to the atom-like emission dynamics. We access these systems by the photon-probability-cluster-expansion: a reliable approach for few photon dynamics in many body electron systems. As a first application, we show that the amplitude of vacuum Rabi flops determines the number of electrons in the quantum dot.

High ambient contrast ratio OLED and QLED without a circular polarizer

NASA Astrophysics Data System (ADS)

Tan, Guanjun; Zhu, Ruidong; Tsai, Yi-Shou; Lee, Kuo-Chang; Luo, Zhenyue; Lee, Yuh-Zheng; Wu, Shin-Tson

2016-08-01

A high ambient contrast ratio display device using a transparent organic light emitting diode (OLED) or transparent quantum-dot light-emitting diode (QLED) with embedded multilayered structure and absorber is proposed and its performance is simulated. With the help of multilayered structure, the device structure allows almost all ambient light to get through the display device and be absorbed by the absorber. Because the reflected ambient light is greatly reduced, the ambient contrast ratio of the display system is improved significantly. Meanwhile, the multilayered structure helps to lower the effective refractive index, which in turn improves the out-coupling efficiency of the display system. Potential applications for sunlight readable flexible and rollable displays are emphasized.

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode.

PubMed

Wang, Zhibin; Cheng, Tai; Wang, Fuzhi; Bai, Yiming; Bian, Xingming; Zhang, Bing; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2018-05-31

Stable and efficient red (R), green (G), and blue (B) light sources based on solution-processed quantum dots (QDs) play important roles in next-generation displays and solid-state lighting technologies. The brightness and efficiency of blue QDs-based light-emitting diodes (LEDs) remain inferior to their red and green counterparts, due to the inherently unfavorable energy levels of different colors of light. To solve these problems, a device structure should be designed to balance the injection holes and electrons into the emissive QD layer. Herein, through a simple autoxidation strategy, pure blue QD-LEDs which are highly bright and efficient are demonstrated, with a structure of ITO/PEDOT:PSS/Poly-TPD/QDs/Al:Al2O3. The autoxidized Al:Al2O3 cathode can effectively balance the injected charges and enhance radiative recombination without introducing an additional electron transport layer (ETL). As a result, high color-saturated blue QD-LEDs are achieved with a maximum luminance over 13,000 cd m -2 , and a maximum current efficiency of 1.15 cd A -1 . The easily controlled autoxidation procedure paves the way for achieving high-performance blue QD-LEDs.

White lighting device from composite films embedded with hydrophilic Cu(In, Ga)S2/ZnS and hydrophobic InP/ZnS quantum dots

NASA Astrophysics Data System (ADS)

Kim, Jong-Hoon; Yang, Heesun

2014-06-01

Two types of non-Cd quantum dots (QDs)—In/Ga ratio-varied, green-to-greenish-yellow fluorescence-tuned Cu-In-Ga-S (CIGS) alloy ones, and red-emitting InP ones—are synthesized for use as down-converters in conjunction with a blue light-emitting diode (LED). Among a series of Ga-rich CI1-xGxS/ZnS core/shell QDs (x = 0.7, 0.8, and 0.9), CI0.2G0.8S/ZnS QD is chosen for the hydrophobic-to-hydrophilic surface modification via an in-situ ligand exchange and then embedded in a water-soluble polyvinyl alcohol (PVA). This free-standing composite film is utilized as a down-converter for the fabrication of a remote-type white QD-LED, but the resulting bi-colored device exhibits a cool white light with a limited color rendering index property. To improve white light qualities, another QD-polymer film of hydrophobic red InP/ZnS QD-embedding polyvinylpyrrolidone is sequentially stacked onto the CI0.2G0.8S/ZnS QD-PVA film, producing a unique dual color-emitting, flexible and transparent bilayered composite film. Tri-colored white QD-LED integrated with the bilayered QD film possesses an exceptional color rendering property through reinforcing a red spectral component and balancing a white spectral distribution.

White lighting device from composite films embedded with hydrophilic Cu(In, Ga)S2/ZnS and hydrophobic InP/ZnS quantum dots.

PubMed

Kim, Jong-Hoon; Yang, Heesun

2014-06-06

Two types of non-Cd quantum dots (QDs)-In/Ga ratio-varied, green-to-greenish-yellow fluorescence-tuned Cu-In-Ga-S (CIGS) alloy ones, and red-emitting InP ones-are synthesized for use as down-converters in conjunction with a blue light-emitting diode (LED). Among a series of Ga-rich CI1-xGxS/ZnS core/shell QDs (x = 0.7, 0.8, and 0.9), CI0.2G0.8S/ZnS QD is chosen for the hydrophobic-to-hydrophilic surface modification via an in-situ ligand exchange and then embedded in a water-soluble polyvinyl alcohol (PVA). This free-standing composite film is utilized as a down-converter for the fabrication of a remote-type white QD-LED, but the resulting bi-colored device exhibits a cool white light with a limited color rendering index property. To improve white light qualities, another QD-polymer film of hydrophobic red InP/ZnS QD-embedding polyvinylpyrrolidone is sequentially stacked onto the CI0.2G0.8S/ZnS QD-PVA film, producing a unique dual color-emitting, flexible and transparent bilayered composite film. Tri-colored white QD-LED integrated with the bilayered QD film possesses an exceptional color rendering property through reinforcing a red spectral component and balancing a white spectral distribution.

Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor

NASA Astrophysics Data System (ADS)

Shen, Huaibin; Zheng, Ying; Wang, Hongzhe; Xu, Weiwei; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Li, Lin Song

2013-11-01

In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using ‘greener’ chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50-75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 103 mA cm-2 and 17.7 mW cm-2 at 8 V it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.

Dual emissive manganese and copper Co-doped Zn-In-S quantum dots as a single color-converter for high color rendering white-light-emitting diodes.

PubMed

Yuan, Xi; Ma, Ruixin; Zhang, Wenjin; Hua, Jie; Meng, Xiangdong; Zhong, Xinhua; Zhang, Jiahua; Zhao, Jialong; Li, Haibo

2015-04-29

Novel white light emitting diodes (LEDs) with environmentally friendly dual emissive quantum dots (QDs) as single color-converters are one of the most promising high-quality solid-state lighting sources for meeting the growing global demand for resource sustainability. A facile method was developed for the synthesis of the bright green-red-emitting Mn and Cu codoped Zn-In-S QDs with an absorption bangdgap of 2.56 eV (485 nm), a large Stokes shift of 150 nm, and high emission quantum yield up to 75%, which were suitable for warm white LEDs based on blue GaN chips. The wide photoluminescence (PL) spectra composed of Cu-related green and Mn-related red emissions in the codoped QDs could be controlled by varying the doping concentrations of Mn and Cu ions. The energy transfer processes in Mn and Cu codoped QDs were proposed on the basis of the changes in PL intensity and lifetime measured by means of steady-state and time-resolved PL spectra. By integrating these bicolor QDs with commercial GaN-based blue LEDs, the as-fabricated tricolor white LEDs showed bright natural white light with a color rendering index of 95, luminous efficacy of 73.2 lm/W, and color temperature of 5092 K. These results indicated that (Mn,Cu):Zn-In-S/ZnS QDs could be used as a single color-converting material for the next generation of solid-state lighting.

Control of Photoluminescence of Carbon Nanodots via Surface Functionalization using Para-substituted Anilines

NASA Astrophysics Data System (ADS)

Kwon, Woosung; Do, Sungan; Kim, Ji-Hee; Seok Jeong, Mun; Rhee, Shi-Woo

2015-07-01

Carbon nanodots (C-dots) are a kind of fluorescent carbon nanomaterials, composed of polyaromatic carbon domains surrounded by amorphous carbon frames, and have attracted a great deal of attention because of their interesting properties. There are still, however, challenges ahead such as blue-biased photoluminescence, spectral broadness, undefined energy gaps and etc. In this report, we chemically modify the surface of C-dots with a series of para-substituted anilines to control their photoluminescence. Our surface functionalization endows our C-dots with new energy levels, exhibiting long-wavelength (up to 650 nm) photoluminescence of very narrow spectral widths. The roles of para-substituted anilines and their substituents in developing such energy levels are thoroughly studied by using transient absorption spectroscopy. We finally demonstrate light-emitting devices exploiting our C-dots as a phosphor, converting UV light to a variety of colors with internal quantum yields of ca. 20%.

Evaluation of a reconfigurable portable instrument for copper determination based on luminescent carbon dots.

PubMed

Salinas-Castillo, Alfonso; Morales, Diego P; Lapresta-Fernández, Alejandro; Ariza-Avidad, María; Castillo, Encarnación; Martínez-Olmos, Antonio; Palma, Alberto J; Capitan-Vallvey, Luis Fermin

2016-04-01

A portable reconfigurable platform for copper (Cu(II)) determination based on luminescent carbon dot (Cdots) quenching is described. The electronic setup consists of a light-emitting diode (LED) as the carbon dot optical exciter and a photodiode as a light-to-current converter integrated in the same instrument. Moreover, the overall analog conditioning is simply performed with one integrated solution, a field-programmable analog array (FPAA), which makes it possible to reconfigure the filter and gain stages in real time. This feature provides adaptability to use the platform as an analytical probe for carbon dots coming from different batches with some variations in luminescence characteristics. The calibration functions obtained that fit a modified Stern-Volmer equation were obtained using luminescence signals from Cdots quenching by Cu(II). The analytical applicability of the reconfigurable portable instrument for Cu(II) using Cdots has been successfully demonstrated in tap water analysis.

On-chip interference of single photons from an embedded quantum dot and an external laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prtljaga, N., E-mail: n.prtljaga@sheffield.ac.uk; Bentham, C.; O'Hara, J.

2016-06-20

In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler.more » This experimental approach allows us to use a classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.« less

Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk.

PubMed

Kim, Je-Hyung; Ko, Young-Ho; Gong, Su-Hyun; Ko, Suk-Min; Cho, Yong-Hoon

2013-01-01

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region.

Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

PubMed

Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

2015-07-03

In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening

PubMed Central

Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

2015-01-01

In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications. PMID:26138830

Structural control of InP/ZnS core/shell quantum dots enables high-quality white LEDs.

PubMed

Kumar, Baskaran Ganesh; Sadeghi, Sadra; Melikov, Rustamzhon; Aria, Mohammad Mohammadi; Jalali, Houman Bahmani; Ow-Yang, Cleva W; Nizamoglu, Sedat

2018-08-24

Herein, we demonstrate that the structural and optical control of InP-based quantum dots (QDs) can lead to high-performance light-emitting diodes (LEDs). Zinc sulphide (ZnS) shells passivate the InP QD core and increase the quantum yield in green-emitting QDs by 13-fold and red-emitting QDs by 8-fold. The optimised QDs are integrated in the liquid state to eliminate aggregation-induced emission quenching and we fabricated white LEDs with a warm, neutral and cool-white appearance by the down-conversion mechanism. The QD-functionalized white LEDs achieve luminous efficiency (LE) up to 14.7 lm W -1 and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell QDs enable 23-fold enhancement in LE of white LEDs compared to ones containing only QDs of InP core.

Versatile Tri(pyrazolyl)phosphanes as Phosphorus Precursors for the Synthesis of Highly Emitting InP/ZnS Quantum Dots.

PubMed

Panzer, René; Guhrenz, Chris; Haubold, Danny; Hübner, René; Gaponik, Nikolai; Eychmüller, Alexander; Weigand, Jan J

2017-11-13

Tri(pyrazolyl)phosphanes (5 R1,R2 ) are utilized as an alternative, cheap and low-toxic phosphorus source for the convenient synthesis of InP/ZnS quantum dots (QDs). From these precursors, remarkably long-term stable stock solutions (>6 months) of P(OLA) 3 (OLAH=oleylamine) are generated from which the respective pyrazoles are conveniently recovered. P(OLA) 3 acts simultaneously as phosphorus source and reducing agent in the synthesis of highly emitting InP/ZnS core/shell QDs. These QDs are characterized by a spectral range between 530-620 nm and photoluminescence quantum yields (PL QYs) between 51-62 %. A proof-of-concept white light-emitting diode (LED) applying the InP/ZnS QDs as a color-conversion layer was built to demonstrate their applicability and processibility. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes.

PubMed

Wang, Ting; Zhu, Bingyan; Wang, Shuangpeng; Yuan, Qilin; Zhang, Han; Kang, Zhihui; Wang, Rong; Zhang, Hanzhuang; Ji, Wenyu

2018-05-02

The effect of shell thickness on the performance of all-inorganic quantum dot light-emitting diodes (QLEDs) is explored by employing a series of green quantum dots (QDs) (Zn x Cd 1- x Se/ZnS core/shell QDs with different ZnS shell thicknesses) as the emitters. ZnO nanoparticles and sol-gel NiO are employed as the electron and hole transport materials, respectively. Time-resolved and steady-state photoluminescence results indicate that positive charging processes might occur for the QDs deposited on NiO, which results in emission quenching of QDs and poor device performance. The thick shell outside the core in QDs not only largely suppresses the QD emission quenching but also effectively preserves the excitons in QDs from dissociation of electron-hole pairs when they are subjected to an electric field. The peak efficiency of 4.2 cd/A and maximum luminance of 4205 cd/m 2 are achieved for the device based on QDs with the thickest shells (∼4.2 nm). We anticipate that these results will spur progress toward the design and realization of efficient all-inorganic QLEDs as a platform for the QD-based full-colored displays.

Realization of wide circadian variability by quantum dots-luminescent mesoporous silica-based white light-emitting diodes

NASA Astrophysics Data System (ADS)

Xie, Bin; Zhang, Jingjing; Chen, Wei; Hao, Junjie; Cheng, Yanhua; Hu, Run; Wu, Dan; Wang, Kai; Luo, Xiaobing

2017-10-01

Human comfort has become one of the most important criteria in modern lighting architecture. Here, we proposed a tuning strategy to enhance the non-image forming photobiological effect on the human circadian rhythm based on quantum-dots-converted white light-emitting diodes (QDs-WLEDs). We introduced the limiting variability of the circadian action factor (CAF), defined as the ratio of circadian efficiency and luminous efficiency of radiation. The CAF was deeply discussed and was found to be a function of constraining the color rendering index (CRI) and correlated color temperatures. The maximum CAF variability of QDs-WLEDs was found to be dependent on the QDs’ peak wavelength and full width at half maximum. With the optimized parameters, the packaging materials were synthesized and WLEDs were packaged. Experimental results show that at CRI > 90, the maximum CAF variability can be tuned by 3.83 times (from 0.251 at 2700 K to 0.961 at 6500 K), which implies that our approach could reduce the number of tunable channels, and could achieve wider CAF variability.

Evidence of significant down-conversion in a Si-based solar cell using CuInS2/ZnS core shell quantum dots

NASA Astrophysics Data System (ADS)

Gardelis, Spiros; Nassiopoulou, Androula G.

2014-05-01

We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS2/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

Optical efficiency enhancement in white organic light-emitting diode display with high color gamut using patterned quantum dot film and long pass filter

NASA Astrophysics Data System (ADS)

Kim, Hyo-Jun; Shin, Min-Ho; Kim, Young-Joo

2016-08-01

A new structure for white organic light-emitting diode (OLED) displays with a patterned quantum dot (QD) film and a long pass filter (LPF) was proposed and evaluated to realize both a high color gamut and high optical efficiency. Since optical efficiency is a critical parameter in white OLED displays with a high color gamut, a red or green QD film as a color-converting component and an LPF as a light-recycling component are introduced to be adjusted via the characteristics of a color filter (CF). Compared with a conventional white OLED without both a QD film and the LPF, it was confirmed experimentally that the optical powers of red and green light in a new white OLED display were increased by 54.1 and 24.7% using a 30 wt % red QD film and a 20 wt % green QD film with the LPF, respectively. In addition, the white OLED with both a QD film and the LPF resulted in an increase in the color gamut from 98 to 107% (NTSC x,y ratio) due to the narrow emission linewidth of the QDs.

Highly Efficient Carbon Dots with Reversibly Switchable Green-Red Emissions for Trichromatic White Light-Emitting Diodes.

PubMed

Yuan, Biao; Guan, Shanyue; Sun, Xingming; Li, Xiaoming; Zeng, Haibo; Xie, Zheng; Chen, Ping; Zhou, Shuyun

2018-05-09

Carbon dots (CDs) have potentials to be utilized in optoelectronic devices, bioimaging, and photocatalysis. The majority of the current CDs with high quantum yield to date were limited in the blue light emission region. Herein, on the basis of surface electron-state engineering, we report a kind of CDs with reversible switching ability between green and red photoluminescence with a quantum yield (QY) of both up to 80%. Highly efficient green and red solid-state luminescence is realized by doping CDs into a highly transparent matrix of methyltriethoxysilane and 3-triethoxysilylpropylamine to form CDs/gel glasses composites with QYs of 80 and 78%. The CDs/gel glasses show better transmittance in visible light bands and excellent thermal stability. A blue-pumped CDs/gel glasses phosphor-based trichromatic white light-emitting diode (WLED) is realized, whose color rendering index is 92.9. The WLED gets the highest luminous efficiency of 71.75 lm W -1 in CDs-based trichromatic WLEDs. This work opens a door for developing highly efficient green- and red-emissive switching CDs which were used as phosphors for WLEDs and have the tendency for applications in other fields, such as sensing, bioimaging, and photocatalysis.

Energy-saving quality road lighting with colloidal quantum dot nanophosphors

NASA Astrophysics Data System (ADS)

Erdem, Talha; Kelestemur, Yusuf; Soran-Erdem, Zeliha; Ji, Yun; Demir, Hilmi Volkan

2014-12-01

Here the first photometric study of road-lighting white light-emitting diodes (WLEDs) integrated with semiconductor colloidal quantum dots (QDs) is reported enabling higher luminance than conventional light sources, specifically in mesopic vision regimes essential to street lighting. Investigating over 100 million designs uncovers that quality road-lighting QD-WLEDs, with a color quality scale and color rendering index ≥85, enables 13-35% higher mesopic luminance than the sources commonly used in street lighting. Furthermore, these QD-WLEDs were shown to be electrically more efficient than conventional sources with power conversion efficiencies ≥16-29%. Considering this fact, an experimental proof-of-concept QD-WLED was demonstrated, which is the first account of QD based color conversion custom designed for street lighting applications. The obtained white LED achieved the targeted mesopic luminance levels in accordance with the road lighting standards of the USA and the UK. These results indicate that road-lighting QD-WLEDs are strongly promising for energy-saving quality road lighting.

Light-emitting diode-based multiwavelength diffuse optical tomography system guided by ultrasound

PubMed Central

Yuan, Guangqian; Alqasemi, Umar; Chen, Aaron; Yang, Yi; Zhu, Quing

2014-01-01

Abstract. Laser diodes are widely used in diffuse optical tomography (DOT) systems but are typically expensive and fragile, while light-emitting diodes (LEDs) are cheaper and are also available in the near-infrared (NIR) range with adequate output power for imaging deeply seated targets. In this study, we introduce a new low-cost DOT system using LEDs of four wavelengths in the NIR spectrum as light sources. The LEDs were modulated at 20 kHz to avoid ambient light. The LEDs were distributed on a hand-held probe and a printed circuit board was mounted at the back of the probe to separately provide switching and driving current to each LED. Ten optical fibers were used to couple the reflected light to 10 parallel photomultiplier tube detectors. A commercial ultrasound system provided simultaneous images of target location and size to guide the image reconstruction. A frequency-domain (FD) laser-diode-based system with ultrasound guidance was also used to compare the results obtained from those of the LED-based system. Results of absorbers embedded in intralipid and inhomogeneous tissue phantoms have demonstrated that the LED-based system provides a comparable quantification accuracy of targets to the FD system and has the potential to image deep targets such as breast lesions. PMID:25473884

Engineering triangular carbon quantum dots with unprecedented narrow bandwidth emission for multicolored LEDs.

PubMed

Yuan, Fanglong; Yuan, Ting; Sui, Laizhi; Wang, Zhibin; Xi, Zifan; Li, Yunchao; Li, Xiaohong; Fan, Louzhen; Tan, Zhan'ao; Chen, Anmin; Jin, Mingxing; Yang, Shihe

2018-06-08

Carbon quantum dots (CQDs) have emerged as promising materials for optoelectronic applications on account of carbon's intrinsic merits of high stability, low cost, and environment-friendliness. However, the CQDs usually give broad emission with full width at half maximum exceeding 80 nm, which fundamentally limit their display applications. Here we demonstrate multicolored narrow bandwidth emission (full width at half maximum of 30 nm) from triangular CQDs with a quantum yield up to 54-72%. Detailed structural and optical characterizations together with theoretical calculations reveal that the molecular purity and crystalline perfection of the triangular CQDs are key to the high color-purity. Moreover, multicolored light-emitting diodes based on these CQDs display good stability, high color-purity, and high-performance with maximum luminance of 1882-4762 cd m -2 and current efficiency of 1.22-5.11 cd A -1 . This work will set the stage for developing next-generation high-performance CQDs-based light-emitting diodes.

A Building Brick Principle to Create Transparent Composite Films with Multicolor Emission and Self-Healing Function.

PubMed

Xiong, Yuan; Zhu, Minshen; Wang, Zhenguang; Schneider, Julian; Huang, He; Kershaw, Stephen V; Zhi, Chunyi; Rogach, Andrey L

2018-05-01

A cellulose paper is used impregnated with light-emitting CdTe nanocrystals and carbon dots, and filled with a polyurethane to fabricate uniform transparent composite films with bright photoluminescence of red (R), green (G), and blue (B) (RGB) colors. A building brick-like assembly method is introduced to realize RGB multicolor emission patterns from this composite material. By sectioning out individual pixels from monochrome-emissive composite sheets, the advantage of the self-healing properties of polyurethane is taken to arrange and weld them into a RGB patterned fabric by brief exposure to ethanol. This provides an approach to form single layer RGB light-emitting pixels, such as potentially required in the display applications, without the use of any lithographic or etching processing. The method can utilize a wide range of different solution-based kinds of light-emitting materials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

PubMed

Moyen, Eric; Kanwat, Anil; Cho, Sinyoung; Jun, Haeyeon; Aad, Roy; Jang, Jin

2018-05-10

Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

PubMed

Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

2015-09-25

Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

One-pot synthesis of polythiol ligand for highly bright and stable hydrophilic quantum dots toward bioconjugate formation

NASA Astrophysics Data System (ADS)

Dezhurov, Sergey V.; Krylsky, Dmitry V.; Rybakova, Anastasia V.; Ibragimova, Sagila A.; Gladyshev, Pavel P.; Vasiliev, Alexey A.; Morenkov, Oleg S.

2018-03-01

A fast and efficient one-pot synthesis of thiol-terminated poly(vinylpirrolidone-co-maleic anhydride-co-ethylene glycol dimethacrylate) based heterobifunctional polymer (PTVP) has been developed. The polymer was used for the modification of quantum dots (QDs) to prepare water soluble and stable QDs with emission quantum yield as high as 80%. Using carbodiimide method, PTVP-capped red light-emitting QDs were conjugated to model monoclonal antibodies specific to glycoprotein B (gB) of Aujeszky’s disease virus (ADV) and successfully used in the lateral flow assay (LFA) for the detection of ADV gB in biological fluids. A comparative analysis of the sensitivity of the method was carried out using three types of QDs emitting in the red and far-red region.

Extremely Vivid, Highly Transparent, and Ultrathin Quantum Dot Light-Emitting Diodes.

PubMed

Choi, Moon Kee; Yang, Jiwoong; Kim, Dong Chan; Dai, Zhaohe; Kim, Junhee; Seung, Hyojin; Kale, Vinayak S; Sung, Sae Jin; Park, Chong Rae; Lu, Nanshu; Hyeon, Taeghwan; Kim, Dae-Hyeong

2018-01-01

Displaying information on transparent screens offers new opportunities in next-generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such "see-through" displays to show vivid images over clear background view. Here transparent quantum dot light-emitting diodes (Tr-QLEDs) are reported with high brightness (bottom: ≈43 000 cd m -2 , top: ≈30 000 cd m -2 , total: ≈73 000 cd m -2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr-QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr-QLEDs (513 pixels in. -1 ) shows the potential of the full-color transparent display. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor.

PubMed

He, Penghui; Jiang, Congbiao; Lan, Linfeng; Sun, Sheng; Li, Yizhi; Gao, Peixiong; Zhang, Peng; Dai, Xingqiang; Wang, Jian; Peng, Junbiao; Cao, Yong

2018-05-22

Light-emitting field-effect transistors (LEFETs) have attained great attention due to their special characteristics of both the switching capacity and the electroluminescence capacity. However, high-performance LEFETs with high mobility, high brightness, and high efficiency have not been realized due to the difficulty in developing high electron and hole mobility materials with suitable band structures. In this paper, quantum dot hybrid LEFETs (QD-HLEFETs) combining high-luminous-efficiency quantum dots (QDs) and a solution-processed scandium-incorporated indium oxide (Sc:In 2 O 3 ) semiconductor were demonstrated. The red QD-HLEFET showed high electrical and optical performance with an electron mobility of 0.8 cm 2 V -1 s -1 , a maximum brightness of 13 400 cd/m 2 , and a maximum external quantum efficiency of 8.7%. The high performance of the QD-HLEFET is attributed to the good energy band matching between Sc:In 2 O 3 and QDs and the balanced hole and electron injection (less exciton nonradiative recombination). In addition, incorporation of Sc into In 2 O 3 can suppress the oxygen vacancy and free carrier generation and brings about excellent current and optical modulation (the on/off current ratio is 10 5 and the on/off brightness ratio is 10 6 ).

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

PubMed Central

Li, Ying-Chang; Chang, Liann-Be; Chen, Hou-Jen; Yen, Chia-Yi; Pan, Ke-Wei; Huang, Bohr-Ran; Kuo, Wen-Yu; Chow, Lee; Zhou, Dan; Popko, Ewa

2017-01-01

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED’s color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer. The photoluminescence (PL) and electroluminescence (EL) spectra of this white LED reveal a broad spectrum ranging from 475 to 675 nm which is close to an ideal white-light source. The corresponding color temperature and color rendering index (CRI) of the fabricated white LED, operated at 350, 500, and 750 mA, are comparable to that of the conventional phosphor-based LEDs. Insights of the epitaxial structure and the transport mechanism were revealed through the TEM and temperature dependent PL and EL measurements. Our results show true potential in the Epi-ready GaN white LEDs for future solid state lighting applications. PMID:28772792

Utilization of solvothermally grown InP/ZnS quantum dots as wavelength converters for fabrication of white light-emitting diodes.

PubMed

Jang, Eun-Pyo; Yang, Heesun

2013-09-01

This work reports on a simple solvothermal synthesis of InP/ZnS core/shell quantum dots (QDs) using a much safer and cheaper phosphorus precursor of tris(dimethylamino)phosphine than the most popularly chosen tris(trimethylsilyl)phosphine. The band gap of InP QDs is facilely controlled by varying the solvothermal core growth time (4 vs. 6 h) with a fixed temperature of 150 degrees C, and the successive solvothermal ZnS shelling at 220 degrees C for 6 h results in green- and yellow-emtting InP/ZnS QD with emission quantum yield of 41-42%. The broad size distribution of as-synthesized InP/ZnS QDs, which appears to be inherent in the current solvothermal approach, is improved by a size-selective sorting procedure, and the emission properties of the resulting size-sorted QD fractions are investigated. To produce white emission for general lighting source, a blue light-emitting diode (LED) is combined with non-size-soroted green or yellow QDs as wavelength converters. Furthermore, the QD-LED that includes a blend of green and yellow QDs is fabricated to generate a white lighting source with an enhanced color rendering performance, and its electroluminescent properties are characterized in detail.

Broadband light sources based on InAs/InGaAs metamorphic quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Trevisi, G.; Frigeri, P.

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In{sub x}Ga{sub 1−x}As buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in In{submore » x}Al{sub y}Ga{sub 1−x−y}As layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescence emission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.« less

Selective recognition of dysprosium(III) ions by enhanced chemiluminescence CdSe quantum dots

NASA Astrophysics Data System (ADS)

Hosseini, Morteza; Ganjali, Mohammad R.; Vaezi, Zahra; Faridbod, Farnoush; Arabsorkhi, Batool; Sheikhha, Mohammad H.

2014-03-01

The intensity of emitted light from CdSe quantum dots (QDs)-H2O2 is described as a novel chemiluminescence (CL) reaction for determination of dysprosium. This reaction is based on the catalytic effect of Dy3+ ions, causing a significant increase in the light emission, as a result of the reaction of quantum dots (QDs) with hydrogen peroxide. In the optimum conditions, this method was satisfactorily described by linear calibration curve in the range of 8.3 × 10-7-5.0 × 10-6 M, the detection limit of 6.0 × 10-8 M, and the relative standard deviation for five determinations of 2.5 × 10-6 M Dy3+ 3.2%. The main experimental advantage of the proposed method is its selective to Dy3+ ions compared with common coexisting cations, therefore, it was successfully applied for the determination of dysprosium ions in water samples.

Improved Efficiency and Enhanced Color Quality of Light-Emitting Diodes with Quantum Dot and Organic Hybrid Tandem Structure.

PubMed

Zhang, Heng; Feng, Yuanxiang; Chen, Shuming

2016-10-03

Light-emitting diodes based on organic (OLEDs) and colloidal quantum dot (QLEDs) are widely considered as next-generation display technologies because of their attractive advantages such as self-emitting and flexible form factor. The OLEDs exhibit relatively high efficiency, but their color saturation is quite poor compared with that of QLEDs. In contrast, the QLEDs show very pure color emission, but their efficiency is lower than that of OLEDs currently. To combine the advantages and compensate for the weaknesses of each other, we propose a hybrid tandem structure which integrates both OLED and QLED in a single device architecture. With ZnMgO/Al/HATCN interconnecting layer, hybrid tandem LEDs are successfully fabricated. The demonstrated hybrid tandem devices feature high efficiency and high color saturation simultaneously; for example, the devices exhibit maximum current efficiency and external quantum efficiency of 96.28 cd/A and 25.90%, respectively. Meanwhile, the full width at half-maximum of the emission spectra is remarkably reduced from 68 to 44 nm. With the proposed hybrid tandem structure, the color gamut of the displays can be effectively increased from 81% to 100% NTSC. The results indicate that the advantages of different LED technologies can be combined in a hybrid tandem structure.

Enhancing the thermal dissipation of a light-converting composite for quantum dot-based white light-emitting diodes through electrospinning nanofibers

NASA Astrophysics Data System (ADS)

Zheng, Huai; Lei, Xiang; Cheng, Ting; Liu, Sheng; Zeng, Xiaoliang; Sun, Rong

2017-06-01

Quantum dots (QDs) have been developed as one of the most promising light-converting materials for white light-emitting diodes (LEDs). In current QD-based LED packaging structures, composites of QDs and polymers are used as light-converting layers. However, the ultralow thermal conductivity of such composites seriously hinders the dissipation of QD-generating heat. In this paper, we demonstrate a method to enhance the thermal dissipation of QD-polymer composites through electrospinning polymer nanofibers. QD-polymer films embedded by electrospun nanofibers were prepared. Benefitting from aligned polymer chains in the electrospun nanofibers, the through-panel and in-panel thermal conductivities of the proposed QD-polymer film increased by 39.9% and 423.1%, respectively, compared to traditional QD-polymer film. The proposed and traditional QD-polymer films were both packaged on chip on board (CoB) LEDs for experimental comparison. Compared to traditional QD-polymer film, the luminous flux and luminous efficiency of the LEDs were increased by up to 51.8% and 42.9% by the proposed QD-polymer film under a current of 800 mA, respectively. With an increase in the driving current from 20-800 mA, the correlated color temperature (CCT) variation decreased by 72.7%. The maximum temperatures in the QD-polymer films were reduced from 419 K-411 K under a driving current of 200 mA.

Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xingsheng, E-mail: xsxu@semi.ac.cn

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreasedmore » with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.« less

Near-infrared quantum dots for HER2 localization and imaging of cancer cells.

PubMed

Rizvi, Sarwat B; Rouhi, Sepideh; Taniguchi, Shohei; Yang, Shi Yu; Green, Mark; Keshtgar, Mo; Seifalian, Alexander M

2014-01-01

Quantum dots are fluorescent nanoparticles with unique photophysical properties that allow them to be used as diagnostic, therapeutic, and theranostic agents, particularly in medical and surgical oncology. Near-infrared-emitting quantum dots can be visualized in deep tissues because the biological window is transparent to these wavelengths. Their small sizes and free surface reactive groups that can be conjugated to biomolecules make them ideal probes for in vivo cancer localization, targeted chemotherapy, and image-guided cancer surgery. The human epidermal growth factor receptor 2 gene (HER2/neu) is overexpressed in 25%-30% of breast cancers. The current methods of detection for HER2 status, including immunohistochemistry and fluorescence in situ hybridization, are used ex vivo and cannot be used in vivo. In this paper, we demonstrate the application of near-infrared-emitting quantum dots for HER2 localization in fixed and live cancer cells as a first step prior to their in vivo application. Near-infrared-emitting quantum dots were characterized and their in vitro toxicity was established using three cancer cell lines, ie, HepG2, SK-BR-3 (HER2-overexpressing), and MCF7 (HER2-underexpressing). Mouse antihuman anti-HER2 monoclonal antibody was conjugated to the near-infrared-emitting quantum dots. In vitro toxicity studies showed biocompatibility of SK-BR-3 and MCF7 cell lines with near-infrared-emitting quantum dots at a concentration of 60 μg/mL after one hour and 24 hours of exposure. Near-infrared-emitting quantum dot antiHER2-antibody bioconjugates successfully localized HER2 receptors on SK-BR-3 cells. Near-infrared-emitting quantum dot bioconjugates can be used for rapid localization of HER2 receptors and can potentially be used for targeted therapy as well as image-guided surgery.

An entangled-light-emitting diode.

PubMed

Salter, C L; Stevenson, R M; Farrer, I; Nicoll, C A; Ritchie, D A; Shields, A J

2010-06-03

An optical quantum computer, powerful enough to solve problems so far intractable using conventional digital logic, requires a large number of entangled photons. At present, entangled-light sources are optically driven with lasers, which are impractical for quantum computing owing to the bulk and complexity of the optics required for large-scale applications. Parametric down-conversion is the most widely used source of entangled light, and has been used to implement non-destructive quantum logic gates. However, these sources are Poissonian and probabilistically emit zero or multiple entangled photon pairs in most cycles, fundamentally limiting the success probability of quantum computational operations. These complications can be overcome by using an electrically driven on-demand source of entangled photon pairs, but so far such a source has not been produced. Here we report the realization of an electrically driven source of entangled photon pairs, consisting of a quantum dot embedded in a semiconductor light-emitting diode (LED) structure. We show that the device emits entangled photon pairs under d.c. and a.c. injection, the latter achieving an entanglement fidelity of up to 0.82. Entangled light with such high fidelity is sufficient for application in quantum relays, in core components of quantum computing such as teleportation, and in entanglement swapping. The a.c. operation of the entangled-light-emitting diode (ELED) indicates its potential function as an on-demand source without the need for a complicated laser driving system; consequently, the ELED is at present the best source on which to base future scalable quantum information applications.

Fully Solution-Processed Tandem White Quantum-Dot Light-Emitting Diode with an External Quantum Efficiency Exceeding 25.

PubMed

Jiang, Congbiao; Zou, Jianhua; Liu, Yu; Song, Chen; He, Zhiwei; Zhong, Zhenji; Wang, Jian; Yip, Hin-Lap; Peng, Junbiao; Cao, Yong

2018-06-15

Solution-processed electroluminescent tandem white quantum-dot light-emitting diodes (TWQLEDs) have the advantages of being low-cost and high-efficiency and having a wide color gamut combined with color filters, making this a promising backlight technology for high-resolution displays. However, TWQLEDs are rarely reported due to the challenge of designing device structures and the deterioration of film morphology with component layers that can be deposited from solutions. Here, we report an interconnecting layer with the optical, electrical, and mechanical properties required for fully solution-processed TWQLED. The optimized TWQLEDs exhibit a state-of-the-art current efficiency as high as 60.4 cd/A and an extremely high external quantum efficiency of 27.3% at a luminance of 100 000 cd/m 2 . A high color gamut of 124% NTSC 1931 standard can be achieved when combined with commercial color filters. These results represent the highest performance for solution-processed WQLEDs, unlocking the great application potential of TWQLEDs as backlights for new-generation displays.

High Color-Purity Green, Orange, and Red Light-Emitting Didoes Based on Chemically Functionalized Graphene Quantum Dots

NASA Astrophysics Data System (ADS)

Kwon, Woosung; Kim, Young-Hoon; Kim, Ji-Hee; Lee, Taehyung; Do, Sungan; Park, Yoonsang; Jeong, Mun Seok; Lee, Tae-Woo; Rhee, Shi-Woo

2016-04-01

Chemically derived graphene quantum dots (GQDs) to date have showed very broad emission linewidth due to many kinds of chemical bondings with different energy levels, which significantly degrades the color purity and color tunability. Here, we show that use of aniline derivatives to chemically functionalize GQDs generates new extrinsic energy levels that lead to photoluminescence of very narrow linewidths. We use transient absorption and time-resolved photoluminescence spectroscopies to study the electronic structures and related electronic transitions of our GQDs, which reveals that their underlying carrier dynamics is strongly related to the chemical properties of aniline derivatives. Using these functionalized GQDs as lumophores, we fabricate light-emitting didoes (LEDs) that exhibit green, orange, and red electroluminescence that has high color purity. The maximum current efficiency of 3.47 cd A-1 and external quantum efficiency of 1.28% are recorded with our LEDs; these are the highest values ever reported for LEDs based on carbon-nanoparticle phosphors. This functionalization of GQDs with aniline derivatives represents a new method to fabricate LEDs that produce natural color.

Studies of mist deposition for the formation of quantum dot CdSe films

NASA Astrophysics Data System (ADS)

Price, S. C.; Shanmugasundaram, K.; Ramani, S.; Zhu, T.; Zhang, F.; Xu, J.; Mohney, S. E.; Zhang, Q.; Kshirsagar, A.; Ruzyllo, J.

2009-10-01

Films of CdSe(ZnS) colloidal nanocrystalline quantum dots (NQDs) were deposited on bare silicon, glass and polymer coated silicon using mist deposition. This effort is a part of an exploratory investigation in which this deposition technique is studied for the first time as a method to form semiconductor NQD films. The process parameters, including deposition time, solution concentration and electric field, were varied to change the thickness of the deposited film. Blanket films and films deposited through a shadow mask were created to investigate the method's ability to pattern films during the deposition process. The differences between these deposition modes in terms of film morphology were observed. Overall, the results show that mist deposition of quantum dots is a viable method for creating thin, patterned quantum dot films using colloidal solution as the precursor. It is concluded that this technique shows very good promise for quantum dot (light emitting diode, LED) fabrication.

Nanophotonic enhanced quantum emitters

NASA Astrophysics Data System (ADS)

Li, Xin; Zhou, Zhang-Kai; Yu, Ying; Gather, Malte; Di Falco, Andrea

2017-08-01

Quantum dots are excellent solid-state quantum sources, because of their stability, their narrow spectral linewidth, and radiative lifetime in the range of 1ns. Most importantly, they can be integrated into more complex nanophononics devices, to realize high quality quantum emitters of single photons or entangled photon sources. Recent progress in nanotechnology materials and devices has opened a number of opportunities to increase, optimize and ultimately control the emission property of single quantum dot. In this work, we present an approach that combines the properties of quantum dots with the flexibility of light control offered by nanoplasmonics and metamaterials structuring. Specifically, we show the nanophotonic enhancement of two types of quantum dots devices. The quantum dots are inserted into optical-positioned micropillar cavities, or decorated on the facets of core-shell GaAs/AlGaAs nanowires, fabricated with a bottom-up approach. In both cases, the metallic nanofeatures, which are designed to control the emission and the polarization state of the emitted light, are realized via direct electron-beam-induced deposition. This approach permits to create three-dimensional features with nanometric resolution and positional accuracy, and does not require wet lithographic steps and previous knowledge of the exact spatial arrangement of the quantum devices.

Spectral and dynamical properties of single excitons, biexcitons, and trions in cesium-lead-halide perovskite quantum dots

DOE PAGES

Makarov, Nikolay Sergeevich; Guo, Shaojun; Isaienko, Oleksandr; ...

2016-02-16

Organic–inorganic lead-halide perovskites have been the subject of recent intense interest due to their unusually strong photovoltaic performance. A new addition to the perovskite family is all-inorganic Cs–Pb-halide perovskite nanocrystals, or quantum dots, fabricated via a moderate-temperature colloidal synthesis. While being only recently introduced to the research community, these nanomaterials have already shown promise for a range of applications from color-converting phosphors and light-emitting diodes to lasers, and even room-temperature single-photon sources. Knowledge of the optical properties of perovskite quantum dots still remains vastly incomplete. Here we apply various time-resolved spectroscopic techniques to conduct a comprehensive study of spectral andmore » dynamical characteristics of single- and multiexciton states in CsPbX3 nanocrystals with X being either Br, I, or their mixture. Specifically, we measure exciton radiative lifetimes, absorption cross-sections, and derive the degeneracies of the band-edge electron and hole states. We also characterize the rates of intraband cooling and nonradiative Auger recombination and evaluate the strength of exciton–exciton coupling. The overall conclusion of this work is that spectroscopic properties of Cs–Pb-halide quantum dots are largely similar to those of quantum dots of more traditional semiconductors such as CdSe and PbSe. At the same time, we observe some distinctions including, for example, an appreciable effect of the halide identity on radiative lifetimes, considerably shorter biexciton Auger lifetimes, and apparent deviation of their size dependence from the “universal volume scaling” previously observed for many traditional nanocrystal systems. The high efficiency of Auger decay in perovskite quantum dots is detrimental to their prospective applications in light-emitting devices and lasers. Furthermore, this points toward the need for the development of approaches for effective suppression of Auger recombination in these nanomaterials, using perhaps insights gained from previous studies of II–VI nanocrystals.« less

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

PubMed Central

Muñoz-Rosas, Ana Luz; Alonso-Huitrón, Juan Carlos

2018-01-01

Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer. PMID:29565267

Luminance enhancement in quantum dot light-emitting diodes fabricated with Field’s metal as the cathode

NASA Astrophysics Data System (ADS)

Basilio, Carlos; Oliva, Jorge; Lopez-Luke, Tzarara; Pu, Ying-Chih; Zhang, Jin Z.; Rodriguez, C. E.; de la Rosa, E.

2017-03-01

This work reports the fabrication and characterization of blue-green quantum dot light-emitting diodes (QD-LEDs) by using core/shell/shell Cd1-x Zn x Se/ZnSe/ZnS quantum dots. Poly [(9,9-bis(3‧-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) was introduced in order to enhance the electron injection and also acted as a protecting layer during the deposition of the cathode (a Field’s metal sheet) on the organic/inorganic active layers at low temperature (63 °C). This procedure permitted us to eliminate the process of thermal evaporation for the deposition of metallic cathodes, which is typically used in the fabrication of OLEDs. The performance of devices made with an aluminum cathode was compared with that of devices which employed Field’s metal (FM) as the cathode. We found that the luminance and efficiency of devices with FM was ~70% higher with respect to those that employed aluminum as the cathode and their consumption of current was similar up to 13 V. We also demonstrated that the simultaneous presence of 1,2-ethanedethiol (EDT) and PFN enhanced the luminance in our devices and improved the current injection in QD-LEDs. Hence, the architecture for QD-LEDs presented in this work could be useful for the fabrication of low-cost luminescent devices.

Quantum-dot-in-perovskite solids.

PubMed

Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H

2015-07-16

Heteroepitaxy-atomically aligned growth of a crystalline film atop a different crystalline substrate-is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

PubMed

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-02-07

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode

DTIC Science & Technology

2011-11-15

nanocavity laser with world record low threshold of 208 nW based on a lateral p-i-n junction defined by ion implantation in gallium arsenide6. This...recombination effects are mini- mized. In contrast, at room temperature, thermal excitation of car- riers depopulates the quantum dots much quicker than does Pur

Tuning Optoelectronic Properties of the Graphene-Based Quantum Dots C16- xSi xH10 Family.

PubMed

Ramadan, F-Z; Ouarrad, H; Drissi, L B

2018-06-07

The electronic and optical properties of graphene-based quantum dots (QDs) are investigated using DFT and many-body perturbation theory. Formation energy, hardeness and electrophilicity show that all structures, from pyrene to silicene QD passing through 15 CSi QD configurations, are energetically and chemically stable. It is also found that they are reactive which implies their favorable character for the possible electronic transport and conductivity. The electronic and optical properties are very sensitive to the number and position of the substituted silicon atoms as well as the directions of the light polarization. Moreover, quantum confinement effects make the exciton binding energy of CSi quantum dots larger than those of their higher dimensional allotropes such as silicene, graphene, and SiC sheet and nanotube. It is also higher those of other shapes of quantum dots like hexagonal graphene QDs and can be tailored from the ultraviolet region to the visible one. The values of the singlet-triplet splitting determined for the X- and Y-light polarized indicate that all configurations have a high fluorescence quantum yield compared to the yield of typical semiconductors, which makes them very promising for various applications such as the light-emitting diode material and nanomedicine.

Lighting market alchemy: Will we find a pot of gold at the end of the III-V rainbow?

NASA Astrophysics Data System (ADS)

Conway, Kathryn M.

2004-12-01

With a focus on visible spectrum light emitting diodes (LEDs), three questions frame this update. First, what are the market and financial outlooks for light-producing compound semiconductor materials and devices? Second, which applications offer the greatest growth potential for the next five to ten years and with which technologies will they likely compete for market share? Third, how can photonics experts contribute to accelerated successes for LEDs and other solid-state lighting technologies such as quantum dots? Using the rainbow as a metaphor for the market, the author examines developments in single color, multiple color and "white light" products.

Scintillating Quantum Dots for Imaging X-Rays (SQDIX) for Aircraft Inspection

NASA Technical Reports Server (NTRS)

Burke, E. R.; DeHaven, S. L.; Williams, P. A.

2015-01-01

Scintillation is the process currently employed by conventional X-ray detectors to create X-ray images. Scintillating quantum dots (StQDs) or nano-crystals are novel, nanometer-scale materials that upon excitation by X-rays, re-emit the absorbed energy as visible light. StQDs theoretically have higher output efficiency than conventional scintillating materials and are more environmentally friendly. This paper will present the characterization of several critical elements in the use of StQDs that have been performed along a path to the use of this technology in wide spread X-ray imaging. Initial work on the scintillating quantum dots for imaging X-rays (SQDIX) system has shown great promise to create state-of-the-art sensors using StQDs as a sensor material. In addition, this work also demonstrates a high degree of promise using StQDs in microstructured fiber optics. Using the microstructured fiber as a light guide could greatly increase the capture efficiency of a StQDs based imaging sensor.

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

PubMed

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Nanotechnology: Colourful Particles for Spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anheier, Norman C.

2015-07-01

In 1857 Michael Faraday gave a well-attended lecture at the Royal Institution of Great Britain, in which he presented his pioneering experimental work that investigated the interaction of light with matter. Faraday’s study probed the fundamental properties of light as it was reflected and absorbed by progressively smaller particles. Very fine gold particles dispersed in liquid were shown to produce vivid colors not seen in larger particles. Faraday did not know he had created colloidal suspensions of quantum dots, but his insight correctly concluded that the distinct colors were somehow due to the minute size of the gold particles. Thismore » great experimental physicist had actually glimpsed a special condition where the particle’s quantum nature was expressed. This work set the future course for nanoscience and quantum theory, but it would take another 125 years before the physical basis of this phenomenon would be explained by quantum size effects. It is now known that when quantum dots are exposed to UV light, some of the electrons are excited as they gain energy, however they remain confined to discrete energy levels not observed in larger particles and solid materials. When the electrons relax and lose their energy, the quantum dot emits light at a specific color that varies with the size of the quantum dot. Bao and Bawendi have cleverly exploited the unique optical properties intrinsic to colloidal quantum dots to develop an innovative compact optical spectrometer that could be integrated with a smart phone camera or as a versatile miniature handheld sensing tool.« less

Overcoming the limitations of silver nanowire electrodes for light emitting applications

NASA Astrophysics Data System (ADS)

Chen, Dustin Yuan

The global lighting market is projected to exceed 100 billion dollars by 2020, undergoing rapid transitions driven by technological advancements. In conjunction with increased demand for new technology, global regulations have become increasingly stringent, mandating the development and implementation of more fuel-efficient light sources. As prior generations of lighting technology such as incandescent bulbs and florescent lighting progressively become phased out, newer technologies such as light emitting diodes (LEDs) and organic light emitting diodes (OLEDs) have become progressively popular and commonplace. Though they still lag behind LEDs in terms of market penetration, OLEDs have garnered increasing amounts of attention in recent years due to unique attributes such as their exotic and large scale form factors, mechanical flexibility, and potential for high volume, low-cost manufacturing. Unfortunately, the costs for OLED manufacturing are currently still prohibitively high for several applications, with the anode and substrate representing 20-25 percent of this total cost. Significant technical and processing improvements for OLED substrates are of utmost necessity for fiscal cost reduction and commercialization of OLED technology. Silver nanowires have gained traction as a potential replacement for the current status quo, indium tin oxide (ITO) due to attributes such as flexibility, low cost processing, and high optoelectronic properties. However, due to nanoscale size effects, the integration of silver nanowires in both process flows and operational use has proven to be problematic. This work makes several key contributions towards enabling the use of silver nanowires for practical and commercial applications within the lighting industry. First, a novel method for the fabrication of a high temperature-stable, flexible substrate with surface roughness (Ra) < 2 nm is presented, based on atomic layer deposition of a conformal metal oxide film on silver nanowires. This development of a thermally stable AgNW based substrate is critical for the future of flexible OLEDs, as both polymers and AgNWs are unstable at elevated temperatures required for certain OLED processing. However, at the time publication, no solutions existed for flexible OLED substrates simultaneously having thermal stability in excess of 230 °C for more than a few minutes while maintaining a smooth surface for subsequent device fabrication. The thermally stable silver nanowires developed in this work are able to withstand temperatures of 500 °C in ramping tests, and when integrated with a thermally stable polymer matrix, withstand temperatures of 300 °C for at least 6 hours, representing an increase in allowable processing temperatures of 70 °C for several hours longer. Resulting polymer light emitting devices (PLEDs) requiring high temperature processing fabricated on this thermally stable exhibit comparable performance to the same devices fabricated on ITO, validating its compatibility for integration in traditional process flows, and validity for use in extreme processing conditions. Secondly, the aforementioned method is applied to understanding the electrical stability of silver nanowires. At the time of publication, previous works on the electrical failure of silver nanowires centered on the observation of failure under current flow, without a solution offered for how to mitigate the phenomenon. However, because the underlying purpose of these electrodes is to transport current, providing a solution for the failure flow is paramount to the success of AgNWs in future commercial applications. The importance of the development of this solution cannot be understated, especially in light of the fact that silver nanowires have been shown to fail under electrical stresses below typical operating conditions of various optoelectronic devices. The same technique mentioned previously can be leveraged for electrically stable silver nanowire networks, which show significant morphological stability over pristine silver nanowires when electrically stressed at normal operating conditions for OLEDs. These electrically stable substrates were able to produce high performance OLEDs with lifetimes 140% longer than the same devices fabricated on ITO, and 20% higher than non-electrically stable AgNW-based substrates. Thirdly, the thermally and electrically stable substrate was used to fabricate a high performing perovskite quantum dot light-emitting device exhibiting high flexibility. The use of quantum dots instead of perovskite precursors and post treatment to convert the precursors to perovskite allowed for several new innovations. Due to the elimination of highly polar solvents typically required with perovskite precursors, a broadened range of architectures can be achieved. Furthermore, due to the small dimensions of the quantum dots in contrast to thick films of perovskite formed from precursors, the active layer can extremely thin, allowing for high mechanical flexibility. The performance metrics achieved of 10.4 cd/A, 8.1 lm/W, and 2.6% EQE at a brightness of 1000 cd/m2 were enabled in part by the substrate, which further allowed for the high mechanical performance. The electroluminescence performance of the perovskite quantum dot LEDs was found to be virtually fully recoverable after being subjected to a bending radius of 2.5 mm, or repeated cycles of bending and unbending to a 4 mm radius, representing the first report of a highly flexible and mechanically perovskite quantum dot light emitting device with high electroluminescence performance. The improved stability of AgNWs with regards to both manufacturing and operational use, in addition to proof of concept in various light emitting devices demonstrates the potential of this technology for large-scale, commercial lighting applications.

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.

PubMed

Deshpande, Saniya; Heo, Junseok; Das, Ayan; Bhattacharya, Pallab

2013-01-01

In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based single quantum dots. It has been suggested that short-wavelength blue single-photon emitters would be useful for free-space quantum cryptography, with the availability of high-speed single-photon detectors in this spectral region. Here we demonstrate blue single-photon emission with electrical injection from an In0.25Ga0.75N quantum dot in a single nanowire. The emitted single photons are linearly polarized along the c axis of the nanowire with a degree of linear polarization of ~70%.

Highly efficient and stable blue-emitting CsPbBr3@SiO2 nanospheres through low temperature synthesis for nanoprinting and WLED.

PubMed

Shao, He; Bai, Xue; Pan, Gencai; Cui, Haining; Zhu, Jinyang; Zhai, Yue; Liu, Jingshi; Dong, Biao; Xu, Lin; Song, Hongwei

2018-07-13

Inorganic perovskite quantum dots (QDs) have attracted wide attention in display and solid-state lighting because of their easily tunable band-gaps and high photoluminescence quantum yields (PLQY) of green light emission. However, some drawbacks limit their practical applications, including the low PLQY of blue light emission and the instability in the moisture environment. In this work, efficient blue-light emitting CsPbBr 3 perovskite QDs with PLQY of 72% were developed through a bandgap engineering approach. The achieved blue-light emitting PLQY is much higher than the values acquired in the inorganic perovskite QDs in the literature. And the emission color of the as-prepared QDs can be facially tuned by only adjusting the reaction temperature. Further, the mono-dispersed perovskite QDs@SiO 2 composites were constructed benefiting from the low temperature synthesis. The optical performance of the QDs could be well persisted even in the moisture environment. Finally, the as-prepared QDs@SiO 2 composite was fabricated as the QD ink on the anti-counterfeit printing technology, from which the obtained pattern would emit varied color under UV lamp. And the as-prepared composites was also applied for fabricating WLED, with Commission Internationale de l'Eclairage (CIE) color coordinates of (0.33, 0.38) and power efficiency of 32.5 lm W -1 , demonstrating their promising potentials in solid-state lighting.

Highly efficient and stable blue-emitting CsPbBr3@SiO2 nanospheres through low temperature synthesis for nanoprinting and WLED

NASA Astrophysics Data System (ADS)

Shao, He; Bai, Xue; Pan, Gencai; Cui, Haining; Zhu, Jinyang; Zhai, Yue; Liu, Jingshi; Dong, Biao; Xu, Lin; Song, Hongwei

2018-07-01

Inorganic perovskite quantum dots (QDs) have attracted wide attention in display and solid-state lighting because of their easily tunable band-gaps and high photoluminescence quantum yields (PLQY) of green light emission. However, some drawbacks limit their practical applications, including the low PLQY of blue light emission and the instability in the moisture environment. In this work, efficient blue-light emitting CsPbBr3 perovskite QDs with PLQY of 72% were developed through a bandgap engineering approach. The achieved blue-light emitting PLQY is much higher than the values acquired in the inorganic perovskite QDs in the literature. And the emission color of the as-prepared QDs can be facially tuned by only adjusting the reaction temperature. Further, the mono-dispersed perovskite QDs@SiO2 composites were constructed benefiting from the low temperature synthesis. The optical performance of the QDs could be well persisted even in the moisture environment. Finally, the as-prepared QDs@SiO2 composite was fabricated as the QD ink on the anti-counterfeit printing technology, from which the obtained pattern would emit varied color under UV lamp. And the as-prepared composites was also applied for fabricating WLED, with Commission Internationale de l’Eclairage (CIE) color coordinates of (0.33, 0.38) and power efficiency of 32.5 lm W‑1, demonstrating their promising potentials in solid-state lighting.

Spin-Based Devices for Magneto-Optoelectronic Integrated Circuits

DTIC Science & Technology

2009-04-29

bulk material and matches that in quantum wells. While these simple linear relationships hold for spin-polarized light-emitting diodes (spin-LEDs...temperature. The quantum efficiency and hence r| increases with decreasing temperature. The individual circuit elements, 33 therefore, exhibit the...Injection, Threshold Reduction and Output Circular Polarization Modulation in Quantum Well and Quantum Dot Semiconductor Spin Polarized Lasers working

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

PubMed Central

Li, Hongjian; Li, Panpan; Kang, Junjie; Ding, Jiianfeng; Ma, Jun; Zhang, Yiyun; Yi, Xiaoyan; Wang, Guohong

2016-01-01

We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-width of 164 nm, covering entire visible wavelength range. A color temperature of 3370 K and a color rendering index of 69.3 have been achieved. Temperature-dependent photoluminescence measurements reveal a strong carriers localization effect of the InGaN QDs layer by obvious blue-shift of emission peak from 50 K to 300 K. The broadband luminescence spectrum is believed to be attributed to the injected carriers captured by the different localized states of InGaN QDs with various sizes, shapes and indium compositions, leading to a full visible color emission. The successful realization of our broadband InGaN QDs LEDs provide a convenient and practical method for the fabrication of GaN-based monolithic full-color LEDs in wafer scale. PMID:27734917

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-01

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at 5 V, the highest luminance (160 cd/m2) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

Highly luminescent and photostable quantum dot-silica monolith and its application to light-emitting diodes.

PubMed

Jun, Shinae; Lee, Junho; Jang, Eunjoo

2013-02-26

A highly luminescent and photostable quantum dot-silica monolith (QD-SM) substance was prepared by preliminary surface exchange of the QDs and base-catalyzed sol-gel condensation of silica. The SM was heavily doped with 6-mercaptohexanol exchanged QDs up to 12 vol % (26 wt %) without particle aggregation. Propylamine catalyst was important in maintaining the original luminescence of the QDs in the SM during sol-gel condensation. The silica layer was a good barrier against oxygen and moisture, so that the QD-SM maintained its initial luminescence after high-power UV radiation (∼1 W) for 200 h and through the 150 °C LED encapsulant curing process. Green and red light-emitting QD-SMs were applied as color-converting layers on blue LEDs, and the external quantum efficiency reached up to 89% for the green QD-SM and 63% for the red one. A white LED made with a mixture of green and red QDs in the SM, in which the color coordinate was adjusted at (0.23, 0.21) in CIE1931 color space for a backlight application, showed an efficacy of 47 lm/W, the highest value yet reported.

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Nishi, Kenichi; Ogura, Ichiro; Sugou, Shigeo; Sugimoto, Yoshimasa

1996-11-01

Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots.

Tuning Single Quantum Dot Emission with a Micromirror.

PubMed

Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

2018-02-14

The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

Intercrossed carbon nanorings with pure surface states as low-cost and environment-friendly phosphors for white-light-emitting diodes.

PubMed

Li, Xiaoming; Liu, Yanli; Song, Xiufeng; Wang, Hao; Gu, Haoshuang; Zeng, Haibo

2015-02-02

As an important energy-saving technique, white-light-emitting diodes (W-LEDs) have been seeking for low-cost and environment-friendly substitutes for rare-earth-based expensive phosphors or Pd(2+)/Cd(2+)-based toxic quantum dots (QDs). In this work, precursors and chemical processes were elaborately designed to synthesize intercrossed carbon nanorings (IC-CNRs) with relatively pure hydroxy surface states for the first time, which enable them to overcome the aggregation-induced quenching (AIQ) effect, and to emit stable yellow-orange luminescence in both colloidal and solid states. As a direct benefit of such scarce solid luminescence from carbon nanomaterials, W-LEDs with color coordinate at (0.28, 0.27), which is close to pure white light (0.33, 0.33), were achieved through using these low-temperature-synthesized and toxic ion-free IC-CNRs as solid phosphors on blue LED chips. This work demonstrates that the design of surface states plays a crucial role in exploring new functions of fluorescent carbon nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Balancing the Electron and Hole Transfer for Efficient Quantum Dot Light-Emitting Diodes by Employing a Versatile Organic Electron-Blocking Layer.

PubMed

Jin, Xiao; Chang, Chun; Zhao, Weifeng; Huang, Shujuan; Gu, Xiaobing; Zhang, Qin; Li, Feng; Zhang, Yubao; Li, Qinghua

2018-05-09

The electron-blocking layer (EBL) is important to balance the charge carrier transfer and achieve highly efficient quantum dot light-emitting diodes (QLEDs). Here, we report the utilization of a soluble tert-butyldimethylsilyl chloride-modified poly( p-phenylene benzobisoxazole) (TBS-PBO) as an EBL for simultaneous good charge carrier transfer balance while maintaining a high current density. We show that the versatile TBS-PBO blocks excess electron injection into the quantum dots (QDs), thus leading to better charge carrier transfer balance. It also restricts the undesired QD-to-EBL electron-transfer process, which preserves the superior emission capabilities of the emitter. As a consequence, the TBS-PBO device delivers an external quantum efficiency (EQE) maximum of 16.7% along with a remarkable current density as high as 139 mA/cm 2 with a brightness of 5484 cd/m 2 . The current density of our device is higher than those of insulator EBL-based devices because of the higher conductivity of the TBS-PBO versus insulator EBL, thus helping achieve high luminance values ranging from 1414 to 20 000 cd/cm 2 with current densities ranging from 44 to 648 mA/cm 2 and EQE > 14%. We believe that these unconventional features of the present TBS-PBO-based QLEDs will expand the wide use of TBS-PBO as buffer layers in other advanced QLED applications.

Photoluminescent carbon quantum dots as a directly film-forming phosphor towards white LEDs.

PubMed

Zhang, Feng; Feng, Xiaoting; Zhang, Yi; Yan, Lingpeng; Yang, Yongzhen; Liu, Xuguang

2016-04-28

Photoluminescent organosilane-functionalized carbon quantum dots (CQDs), 3.0-3.5 nm in diameter, were synthesized via a facile hydrothermal method using citric acid monohydrate as a precursor and N-(3-(trimethoxysilyl) propyl) ethylenediamine as a coordinating and passivation agent. The optical properties of the as-obtained CQDs were investigated in detail. The CQD aqueous solution emits bright blue-white light under ultraviolet (UV) illumination with a quantum yield of 57.3% and high red-green-blue (RGB) spectral composition of 60.1%, and in particular the CQDs exhibit excitation-independent photoluminescence. The CQDs have a narrow size distribution around 3.1 nm and good film-forming ability through simple heat-treatment. By virtue of these excellent optical characteristics and good film-forming ability, a white light-emitting device (LED) was fabricated by combining a UV-LED chip with a single CQD phosphor film, which exhibited cool white light with a CIE coordinate of (0.31, 0.36), a color rendering index of 84 and a correlated color temperature of 6282 K. In addition, the white LED exhibits good optical stability under various working currents and for different working time intervals. Moreover, the interaction between the carbogenic core and surface groups was discussed using the DMol(3) program based on density functional theory. This research suggests the great potential of CQDs for solid-state lighting systems and reveals the effect of the surface state on the photoluminescent mechanism of CQDs.

Tunable light emission by exciplex state formation between hybrid halide perovskite and core/shell quantum dots: Implications in advanced LEDs and photovoltaics.

PubMed

Sanchez, Rafael S; de la Fuente, Mauricio Solis; Suarez, Isaac; Muñoz-Matutano, Guillermo; Martinez-Pastor, Juan P; Mora-Sero, Ivan

2016-01-01

We report the first observation of exciplex state electroluminescence due to carrier injection between the hybrid lead halide perovskite (MAPbI3-xClx) and quantum dots (core/shell PbS/CdS). Single layers of perovskite (PS) and quantum dots (QDs) have been produced by solution processing methods, and their photoluminescent properties are compared to those of bilayer samples in both PS/QD and QD/PS configurations. Exciplex emission at lower energies than the band gap of both PS and QD has been detected. The exciplex emission wavelength of this mixed system can be simply tuned by controlling the QD size. Light-emitting diodes (LEDs) have been fabricated using those configurations, which provide light emission with considerably low turn-on potential. The "color" of the LED can also be tuned by controlling the applied bias. The presence of the exciplex state PS and QDs opens up a broad range of possibilities with important implications not only in tunable LEDs but also in the preparation of intermediate band gap photovoltaic devices with the potentiality of surpassing the Shockley-Queisser limit.

Tunable light emission by exciplex state formation between hybrid halide perovskite and core/shell quantum dots: Implications in advanced LEDs and photovoltaics

PubMed Central

Sanchez, Rafael S.; de la Fuente, Mauricio Solis; Suarez, Isaac; Muñoz-Matutano, Guillermo; Martinez-Pastor, Juan P.; Mora-Sero, Ivan

2016-01-01

We report the first observation of exciplex state electroluminescence due to carrier injection between the hybrid lead halide perovskite (MAPbI3–xClx) and quantum dots (core/shell PbS/CdS). Single layers of perovskite (PS) and quantum dots (QDs) have been produced by solution processing methods, and their photoluminescent properties are compared to those of bilayer samples in both PS/QD and QD/PS configurations. Exciplex emission at lower energies than the band gap of both PS and QD has been detected. The exciplex emission wavelength of this mixed system can be simply tuned by controlling the QD size. Light-emitting diodes (LEDs) have been fabricated using those configurations, which provide light emission with considerably low turn-on potential. The “color” of the LED can also be tuned by controlling the applied bias. The presence of the exciplex state PS and QDs opens up a broad range of possibilities with important implications not only in tunable LEDs but also in the preparation of intermediate band gap photovoltaic devices with the potentiality of surpassing the Shockley-Queisser limit. PMID:26844299

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field

PubMed Central

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-01-01

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton–exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72±0.05. PMID:22314357

Polydiacetylene-enclosed near-infrared fluorescent semiconducting polymer dots for bioimaging and sensing.

PubMed

Wu, Pei-Jing; Kuo, Shih-Yu; Huang, Ya-Chi; Chen, Chuan-Pin; Chan, Yang-Hsiang

2014-05-20

Semiconducting polymer dots (P-dots) recently have emerged as a new type of ultrabright fluorescent probe with promising applications in biological imaging and detection. With the increasing desire for near-infrared (NIR) fluorescing probes for in vivo biological measurements, the currently available NIR-emitting P-dots are very limited and the leaching of the encapsulated dyes/polymers has usually been a concern. To address this challenge, we first embedded the NIR dyes into the matrix of poly[(9,9-dioctylfluorene)-co-2,1,3-benzothiadiazole-co-4,7-di(thiophen-2-yl)-2,1,3-benzothiadiazole] (PF-BT-DBT) polymer and then enclosed the doped P-dots with polydiacetylenes (PDAs) to avoid potential leakage of the entrapped NIR dyes from the P-dot matrix. These PDA-enclosed NIR-emitting P-dots not only emitted much stronger NIR fluorescence than conventional organic molecules but also exhibited enhanced photostability over CdTe quantum dots, free NIR dyes, and gold nanoclusters. We next conjugated biomolecules onto the surface of the resulting P-dots and demonstrated their capability for specific cellular labeling without any noticeable nonspecific binding. To employ this new class of material as a facile sensing platform, an easy-to-prepare test paper, obtained by soaking the paper into the PDA-enclosed NIR-emitting P-dot solution, was used to sense external stimuli such as ions, temperature, or pH, depending on the surface functionalization of PDAs. We believe these PDA-coated NIR-fluorescing P-dots will be very useful in a variety of bioimaging and analytical applications.

Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control

NASA Astrophysics Data System (ADS)

Tsai, Sheng-Chieh; Li, Ming-Jui; Fang, Hsin-Chiao; Tu, Chia-Hao; Liu, Chuan-Pu

2018-05-01

A facile method for fabricating blue light-emitting diodes (B-LEDs) with small embedded quantum dots (QDs) and enhanced light emission is demonstrated by tuning the temperature of the growing GaN capping layer to eliminate V-defects. As the growth temperature increases from 770 °C to 840 °C, not only does the density of the V-defects reduce from 4.12 ∗ 108 #/cm2 nm to zero on a smooth surface, but the QDs also get smaller. Therefore, the growth mechanism of smaller QDs assisted by elimination of V-defects is discussed. Photoluminescence and electroluminescence results show that smaller embedded QDs can improve recombination efficiency, and thus achieve higher peak intensity with smaller peak broadening. Accordingly, the external quantum efficiency of the B-LEDs with smaller QDs is enhanced, leading to a 6.8% increase in light output power in lamp-form package LEDs.

Bandgap Tuning of Silicon Quantum Dots by Surface Functionalization with Conjugated Organic Groups.

PubMed

Zhou, Tianlei; Anderson, Ryan T; Li, Huashan; Bell, Jacob; Yang, Yongan; Gorman, Brian P; Pylypenko, Svitlana; Lusk, Mark T; Sellinger, Alan

2015-06-10

The quantum confinement and enhanced optical properties of silicon quantum dots (SiQDs) make them attractive as an inexpensive and nontoxic material for a variety of applications such as light emitting technologies (lighting, displays, sensors) and photovoltaics. However, experimental demonstration of these properties and practical application into optoelectronic devices have been limited as SiQDs are generally passivated with covalently bound insulating alkyl chains that limit charge transport. In this work, we show that strategically designed triphenylamine-based surface ligands covalently bonded to the SiQD surface using conjugated vinyl connectivity results in a 70 nm red-shifted photoluminescence relative to their decyl-capped control counterparts. This suggests that electron density from the SiQD is delocalized into the surface ligands to effectively create a larger hybrid QD with possible macroscopic charge transport properties.

Can the exciton--polariton be defined by its quantum properties?

NASA Astrophysics Data System (ADS)

Fonseca-Romero, Karen; Cipagauta, Gustavo; Suárez-Forero, Daniel; Vinck-Posada, Herbert; Rey-González, Rafael; Herrera, William; Rodriguez, Boris

2013-03-01

We discuss the defining properties of a polariton in the framework of a microcavity-quantum dot system, described by a simple fully quantum model which takes into account loses and pumping. We show that even in the strong coupling regime, and provided that the emitted light exhibit subpoissonian statistics, the density operator of the system can be so mixed that quantum matter-radiation correlations are absent. We suggest the inclusion of matter-radiation entanglement as a defining property of the polariton. The weak-coupling, strong-coupling and lasing regimes, usually identified through the photoluminescence of the emitted light, can be understood in terms of quantum properties of the system state (entanglement, mixedness and light correlation functions). Our numerical anaylisis reveals the fundamental role of detuning on the coherence properties of the emitted light and on entanglement. In this sense, there is no polariton near resonance, even in the strong coupling regime. We show that the ``best'' polariton (maximally entangled matter-light state) is found when the exciton pumping rate is equal to the photon decay rate, and the detuning is of the order of three times the value of the coupling constant. The authors acknowledge partial financial support from Dirección de Investigación - Sede Bogotá, Universidad Nacional de Colombia (DIB-UNAL) under project 12584.

Novel Biomedical Device Utilizing Light-Emitting Nanostructures Developed

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Goldman, Rachel

2004-01-01

Sketches and chemical diagrams of state-of-the-art device and novel proposed device are presented. Current device uses a diode laser that emits into a fluorescent fluid only one wavelength and a photodetector diode that detects only one wavelength. Only one type of bacteria can be detected. The proposed device uses a quantum dot array that emits into a fluorescent fluid multiple wavelengths and an NIR 512 spectrometer that scans 0.8- to 1.7-mm wavelengths. Hundreds of different bacteria and viruses can be detected. A novel biomedical device is being developed at the NASA Glenn Research Center in cooperation with the University of Michigan. This device uses nano-structured quantum dots that emit light in the near-infrared (IR) region. The nanostructured quantum dots are used as a source and excite fluorochrome polymers coupled with antibodies that seek out and attach to specific bacteria and viruses. The fluorochrome polymers/antibodies fluoresce at specific wavelengths in the near-IR spectrum, but these wavelengths are offset from the excitation wavelength and can be detected with a tunable spectrometer. The device will be used to detect the presence of viruses and bacteria in simple fluids and eventually in more complex fluids, such as blood. Current state-of-the-art devices are limited to single bacteria or virus detection and a considerable amount of time and effort is required to prepare samples for analysis. Most importantly, the devices are quite large and cumbersome, which prohibits them from being used on the International Space Station and the space shuttles. This novel device uses nanostructured quantum dots which, through molecular beam epitaxy and highly selective annealing processes, can be developed into an illumination source that could potentially generate hundreds of specific wavelengths. As a result, this device will be able to excite hundreds of antibody/fluorochrome polymer combinations, which in turn could be used to detect hundreds of bacteria and viruses in fluids. A novel sample preparation technique that exploits micromembrane filtration and centrifugation methods has been developed for this device. The technique greatly reduces the time required to prepare the sample and the amount of sample needed to perform an accurate and comprehensive analysis. Last, and probably most important, because of the nano-light-emitting source and the novel sample preparation technique, the overall size of the device could be reduced dramatically. This device will serve as a nanoscale lab-on-a-chip for in situ microorganism detection and will enable tests to be performed on a time scale of minutes rather than days. Thus, it is ideally suited for monitoring the environmental conditions onboard the International Space Station and the space shuttles, thereby enhancing the safety of the astronauts. In addition, the device has important commercial applications, such as detecting the presence of bacteria and viruses in water at food- and beverage-processing centers, water treatment plants, and restaurants. Also, this technology has the potential to be used to detect bacteria and viruses in more complex fluids, such as blood--which in all likelihood would revolutionize blood analysis as it is performed today. This project was made possible through the Director's Discretionary Fund and is ongoing. In addition, this project provides funding to Dr. Rachel Goldman of the University of Michigan for the research and development of nanostructured quantum dots.

Selective Determination of Trinitrotoluene Based on Energy Transfer between Carbon Dots and Gold Nanoparticles.

PubMed

Oskoei, Yones Mosaei; Fattahi, Hassan; Hassanzadeh, Javad; Azar, Ali Mousavi

2016-01-01

A fluorescence resonance energy transfer (FRET) system between carbon dots (C-dots) and amine-capped gold nanoparticles (AuNPs) was developed for the selective determination of 2,4,6-trinitrotoluene (TNT). C-dots have an intrinsic florescence emission depending on their exciting wavelength. In the presence of AuNPs, C-dots adsorb on the Au surfaces, and NPs treat as energy acceptor, which can receive light emitted by C-dots, leading to decrease the fluorescence intensity of C-dots. Furthermore, it is observed that nitroaromatic compounds, especially TNT, could restore this fluorescence due to selective interaction with AuNPs via amine groups, and so releasing the C-dots. Based on this effect, a sensitive and selective fluorescence turn-on probe was designed for the determination of TNT. Some important factors including AuNPs and C-dot concentrations and media pH, which would affect the efficiency of the probe, were optimized. Under the optimum experimental conditions, good linear relationships in the range of 7 - 250 nmol L(-1) TNT with the detection limit of 2.2 nmol L(-1) were obtained. The proposed method was satisfactorily applied to the determination of TNT in the environmental water samples. Compared with previous reports, the developed method has relatively high sensitivity, short analysis time, low cost and ease of operation.

High-efficiency red electroluminescent device based on multishelled InP quantum dots.

PubMed

Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

2016-09-01

We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4^'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m², a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling

PubMed Central

Kim, Hyo-Jun; Shin, Min-Ho; Kim, Joo-Suc; Kim, Se-Eun; Kim, Young-Joo

2017-01-01

An optically efficient structure was proposed and fabricated to realize high brightness organic light emitting diode (OLED) displays based on a white OLED prepared with the air-gapped bridges on the quantum dot (QD) patterns. Compared with a conventional white OLED display, in our experiments, the optical intensity of the proposed OLED display shows the enhancement of 58.2% in the red color and 16.8% in the green color after applying the air-gapped bridge structure on QD patterns of 20 wt% concentration. This enhancement comes from the two facts that the QD patterns downconvert unnecessary blue or blue/green light to the required green or red light and the air-gapped bridges increase the color conversion efficiency of QDs by optical recycling using total internal reflection (TIR) at the interface. In addition, the color gamut of the proposed OLED display increases from 65.5 to 75.9% (NTSC x, y ratio) due to the narrow emission spectra of QDs. PMID:28211516

High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling

NASA Astrophysics Data System (ADS)

Kim, Hyo-Jun; Shin, Min-Ho; Kim, Joo-Suc; Kim, Se-Eun; Kim, Young-Joo

2017-02-01

An optically efficient structure was proposed and fabricated to realize high brightness organic light emitting diode (OLED) displays based on a white OLED prepared with the air-gapped bridges on the quantum dot (QD) patterns. Compared with a conventional white OLED display, in our experiments, the optical intensity of the proposed OLED display shows the enhancement of 58.2% in the red color and 16.8% in the green color after applying the air-gapped bridge structure on QD patterns of 20 wt% concentration. This enhancement comes from the two facts that the QD patterns downconvert unnecessary blue or blue/green light to the required green or red light and the air-gapped bridges increase the color conversion efficiency of QDs by optical recycling using total internal reflection (TIR) at the interface. In addition, the color gamut of the proposed OLED display increases from 65.5 to 75.9% (NTSC x, y ratio) due to the narrow emission spectra of QDs.

High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling.

PubMed

Kim, Hyo-Jun; Shin, Min-Ho; Kim, Joo-Suc; Kim, Se-Eun; Kim, Young-Joo

2017-02-17

An optically efficient structure was proposed and fabricated to realize high brightness organic light emitting diode (OLED) displays based on a white OLED prepared with the air-gapped bridges on the quantum dot (QD) patterns. Compared with a conventional white OLED display, in our experiments, the optical intensity of the proposed OLED display shows the enhancement of 58.2% in the red color and 16.8% in the green color after applying the air-gapped bridge structure on QD patterns of 20 wt% concentration. This enhancement comes from the two facts that the QD patterns downconvert unnecessary blue or blue/green light to the required green or red light and the air-gapped bridges increase the color conversion efficiency of QDs by optical recycling using total internal reflection (TIR) at the interface. In addition, the color gamut of the proposed OLED display increases from 65.5 to 75.9% (NTSC x, y ratio) due to the narrow emission spectra of QDs.

Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Y. F.; Cao, X. A., E-mail: xacao@mail.wvu.edu

2014-11-17

CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasinglymore » dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.« less

Brightly Luminescent and Color-Tunable Colloidal CH3NH3PbX3 (X = Br, I, Cl) Quantum Dots: Potential Alternatives for Display Technology.

PubMed

Zhang, Feng; Zhong, Haizheng; Chen, Cheng; Wu, Xian-gang; Hu, Xiangmin; Huang, Hailong; Han, Junbo; Zou, Bingsuo; Dong, Yuping

2015-04-28

Organometal halide perovskites are inexpensive materials with desirable characteristics of color-tunable and narrow-band emissions for lighting and display technology, but they suffer from low photoluminescence quantum yields at low excitation fluencies. Here we developed a ligand-assisted reprecipitation strategy to fabricate brightly luminescent and color-tunable colloidal CH3NH3PbX3 (X = Br, I, Cl) quantum dots with absolute quantum yield up to 70% at room temperature and low excitation fluencies. To illustrate the photoluminescence enhancements in these quantum dots, we conducted comprehensive composition and surface characterizations and determined the time- and temperature-dependent photoluminescence spectra. Comparisons between small-sized CH3NH3PbBr3 quantum dots (average diameter 3.3 nm) and corresponding micrometer-sized bulk particles (2-8 μm) suggest that the intense increased photoluminescence quantum yield originates from the increase of exciton binding energy due to size reduction as well as proper chemical passivations of the Br-rich surface. We further demonstrated wide-color gamut white-light-emitting diodes using green emissive CH3NH3PbBr3 quantum dots and red emissive K2SiF6:Mn(4+) as color converters, providing enhanced color quality for display technology. Moreover, colloidal CH3NH3PbX3 quantum dots are expected to exhibit interesting nanoscale excitonic properties and also have other potential applications in lasers, electroluminescence devices, and optical sensors.

Quantum optics with nanowires (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

DTIC Science & Technology

2015-07-16

SECURITY CLASSIFICATION OF: The InAs quantum dot (QD) grown on GaAs substrates represents a highly performance active region in the 1 - 1.3 µm...2015 Approved for Public Release; Distribution Unlimited Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface...ABSTRACT Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene Report

One-step fabrication of biocompatible chitosan-coated ZnS and ZnS:Mn2+ quantum dots via a γ-radiation route

NASA Astrophysics Data System (ADS)

Chang, Shu-Quan; Kang, Bin; Dai, Yao-Dong; Zhang, Hong-Xu; Chen, Da

2011-11-01

Biocompatible chitosan-coated ZnS quantum dots [CS-ZnS QDs] and chitosan-coated ZnS:Mn2+ quantum dots [CS-ZnS:Mn2+ QDs] were successfully fabricated via a convenient one-step γ-radiation route. The as-obtained QDs were around 5 nm in diameter with excellent water-solubility. These QDs emitting strong visible blue or orange light under UV excitation were successfully used as labels for PANC-1 cells. The cell experiments revealed that CS-ZnS and CS-ZnS:Mn2+ QDs showed low cytotoxicity and good biocompatibility, which offered possibilities for further biomedical applications. Moreover, this convenient synthesis strategy could be extended to fabricate other nanoparticles coated with chitosan. PACS: 81.07.Ta; 78.67.Hc; 82.35.Np; 87.85.Rs.

Impact of D2O/H2O Solvent Exchange on the Emission of HgTe and CdTe Quantum Dots: Polaron and Energy Transfer Effects.

PubMed

Wen, Qiannan; Kershaw, Stephen V; Kalytchuk, Sergii; Zhovtiuk, Olga; Reckmeier, Claas; Vasilevskiy, Mikhail I; Rogach, Andrey L

2016-04-26

We have studied light emission kinetics and analyzed carrier recombination channels in HgTe quantum dots that were initially grown in H2O. When the solvent is replaced by D2O, the nonradiative recombination rate changes highlight the role of the vibrational degrees of freedom in the medium surrounding the dots, including both solvent and ligands. The contributing energy loss mechanisms have been evaluated by developing quantitative models for the nonradiative recombination via (i) polaron states formed by strong coupling of ligand vibration modes to a surface trap state (nonresonant channel) and (ii) resonant energy transfer to vibration modes in the solvent. We conclude that channel (i) is more important than (ii) for HgTe dots in either solution. When some of these modes are removed from the relevant spectral range by the H2O to D2O replacement, the polaron effect becomes weaker and the nonradiative lifetime increases. Comparisons with CdTe quantum dots (QDs) served as a reference where the resonant energy loss (ii) a priori was not a factor, also confirmed by our experiments. The solvent exchange (H2O to D2O), however, is found to slightly increase the overall quantum yield of CdTe samples, probably by increasing the fraction of bright dots in the ensemble. The fundamental study reported here can serve as the foundation for the design and optimization principles of narrow bandgap quantum dots aimed at applications in long wavelength colloidal materials for infrared light emitting diodes and photodetectors.

High color rendering index of remote-type white LEDs with multi-layered quantum dot-phosphor films and short-wavelength pass dichroic filters

NASA Astrophysics Data System (ADS)

Yoon, Hee Chang; Oh, Ji Hye; Do, Young Rag

2014-09-01

This paper introduces high color rendering index (CRI) white light-emitting diodes (W-LEDs) coated with red emitting (Sr,Ca)AlSiN3:Eu phosphors and yellowish-green emitting AgIn5S8/ZnS (AIS/ZS) quantum dots (QDs) on glass or a short-wavelength pass dichroic filter (SPDF), which transmit blue wavelength regions and reflect yellow wavelength regions. The red emitting (Sr,Ca)AlSiN3:Eu phosphor film is coated on glass and a SPDF using a screen printing method, and then the yellowish-green emitting AIS/ZS QDs are coated on the red phosphor (Sr,Ca)AlSiN3:Eu film-coated glass and SPDF using the electrospray (e-spray) method.To fabricate the red phosphor film, the optimum amount of phosphor is dispersed in a silicon binder to form a red phosphor paste. The AIS/ZS QDs are mixed with dimethylformamide (DMF), toluene, and poly(methyl methacrylate) (PMMA) for the e-spray coating. The substrates are spin-coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to fabricate a conductive surface. The CRI of the white LEDs is improved through inserting the red phosphor film between the QD layer and the glass substrate. Furthermore, the light intensities of the multi-layered phosphor films are enhanced through changing the glass substrate to the SPDF. The correlated color temperatures (CCTs) vary as a function of the phosphor concentration in the phosphor paste. The optical properties of the yellowish-green AIS/ZS QDs and red (Sr,Ca)AlSiN3:Eu phosphors are characterized using photoluminescence (PL), and the multi-layered QD-phosphor films are measured using electroluminescence (EL) with an InGaN blue LED (λmax = 450 nm) at 60 mA.

Alumina/polymer-coated nanocrystals with extremely high stability used as a color conversion material in LEDs

NASA Astrophysics Data System (ADS)

Woo, Ju Yeon; Lee, Jongsoo; Han, Chang-Soo

2013-12-01

The long-term stability of quantum dot (QD)-based devices under harsh environmental conditions has been a critical bottleneck to be resolved for commercial use. Here, we demonstrate an extremely stable QD/alumina/polymer hybrid structure by combining internal atomic layer deposition (ALD) infilling with polymer encapsulation. ALD infilling and polymer encapsulation of QDs synergistically prohibit the degradation of QDs in terms of optical, thermal and humid attacks. Our hybrid QD/alumina/polymer film structure showed no noticeable reduction in photoluminescence even in a commercial grade test (85% humidity at 85 ° C) over 28 days. In addition, we successfully fabricated a QD-based light-emitting device with excellent long-term stability by incorporating hybrid QD/alumina/polymer film as a color conversion material on light-emitting diode chips.

Designing artificial 2D crystals with site and size controlled quantum dots.

PubMed

Xie, Xuejun; Kang, Jiahao; Cao, Wei; Chu, Jae Hwan; Gong, Yongji; Ajayan, Pulickel M; Banerjee, Kaustav

2017-08-30

Ordered arrays of quantum dots in two-dimensional (2D) materials would make promising optical materials, but their assembly could prove challenging. Here we demonstrate a scalable, site and size controlled fabrication of quantum dots in monolayer molybdenum disulfide (MoS 2 ), and quantum dot arrays with nanometer-scale spatial density by focused electron beam irradiation induced local 2H to 1T phase change in MoS 2 . By designing the quantum dots in a 2D superlattice, we show that new energy bands form where the new band gap can be controlled by the size and pitch of the quantum dots in the superlattice. The band gap can be tuned from 1.81 eV to 1.42 eV without loss of its photoluminescence performance, which provides new directions for fabricating lasers with designed wavelengths. Our work constitutes a photoresist-free, top-down method to create large-area quantum dot arrays with nanometer-scale spatial density that allow the quantum dots to interfere with each other and create artificial crystals. This technique opens up new pathways for fabricating light emitting devices with 2D materials at desired wavelengths. This demonstration can also enable the assembly of large scale quantum information systems and open up new avenues for the design of artificial 2D materials.

Bioconjugated Quantum Dots for In Vivo Molecular and Cellular Imaging

PubMed Central

Smith, Andrew M.; Duan, Hongwei; Mohs, Aaron M.; Nie, Shuming

2008-01-01

Semiconductor quantum dots (QDs) are tiny light-emitting particles on the nanometer scale, and are emerging as a new class of fluorescent labels for biology and medicine. In comparison with organic dyes and fluorescent proteins, they have unique optical and electronic properties, with size-tunable light emission, superior signal brightness, resistance to photobleaching, and broad absorption spectra for simultaneous excitation of multiple fluorescence colors. QDs also provide a versatile nanoscale scaffold for designing multifunctional nanoparticles with both imaging and therapeutic functions. When linked with targeting ligands such as antibodies, peptides or small molecules, QDs can be used to target tumor biomarkers as well as tumor vasculatures with high affinity and specificity. Here we discuss the synthesis and development of state-of-the-art QD probes and their use for molecular and cellular imaging. We also examine key issues for in vivo imaging and therapy, such as nanoparticle biodistribution, pharmacokinetics, and toxicology. PMID:18495291

Electrically controlled crossing of energy levels in quantum dots in two-dimensional topological insulators

NASA Astrophysics Data System (ADS)

Sukhanov, Aleksei A.

2017-05-01

We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a trivial insulator, the energy difference between the levels of the ground state and first excited state can decrease with decreasing the radius and increasing the depth of the QD so that these levels intersect under some critical condition. The crossing of the levels results in unusual features of optical properties caused by intraceneter electron transitions. In particular, it leads to significant changes of light absorption due to electron transitions between such levels and to the transient electroluminescence induced by electrical tuning of QD and TI parameters. In the case of magnetic TIs, the polarization direction of the absorbed or emitted circularly polarized light is changed due to the level crossing.

Two-Photon Absorption and Two-Photon-Induced Gain in Perovskite Quantum Dots.

PubMed

Nagamine, Gabriel; Rocha, Jaqueline O; Bonato, Luiz G; Nogueira, Ana F; Zaharieva, Zhanet; Watt, Andrew A R; de Brito Cruz, Carlos H; Padilha, Lazaro A

2018-06-21

Perovskite quantum dots (PQDs) emerged as a promising class of material for applications in lighting devices, including light emitting diodes and lasers. In this work, we explore nonlinear absorption properties of PQDs showing the spectral signatures and the size dependence of their two-photon absorption (2PA) cross-section, which can reach values higher than 10 6 GM. The large 2PA cross section allows for low threshold two-photon induced amplified spontaneous emission (ASE), which can be as low as 1.6 mJ/cm 2 . We also show that the ASE properties are strongly dependent on the nanomaterial size, and that the ASE threshold, in terms of the average number of excitons, decreases for smaller PQDs. Investigating the PQDs biexciton binding energy, we observe strong correlation between the increasing on the biexciton binding energy and the decreasing on the ASE threshold, suggesting that ASE in PQDs is a biexciton-assisted process.

Design, Implementation and Characterization of a Quantum-Dot-Based Volumetric Display

NASA Astrophysics Data System (ADS)

Hirayama, Ryuji; Naruse, Makoto; Nakayama, Hirotaka; Tate, Naoya; Shiraki, Atsushi; Kakue, Takashi; Shimobaba, Tomoyoshi; Ohtsu, Motoichi; Ito, Tomoyoshi

2015-02-01

In this study, we propose and experimentally demonstrate a volumetric display system based on quantum dots (QDs) embedded in a polymer substrate. Unlike conventional volumetric displays, our system does not require electrical wiring; thus, the heretofore unavoidable issue of occlusion is resolved because irradiation by external light supplies the energy to the light-emitting voxels formed by the QDs. By exploiting the intrinsic attributes of the QDs, the system offers ultrahigh definition and a wide range of colours for volumetric displays. In this paper, we discuss the design, implementation and characterization of the proposed volumetric display's first prototype. We developed an 8 × 8 × 8 display comprising two types of QDs. This display provides multicolour three-type two-dimensional patterns when viewed from different angles. The QD-based volumetric display provides a new way to represent images and could be applied in leisure and advertising industries, among others.

Design, implementation and characterization of a quantum-dot-based volumetric display.

PubMed

Hirayama, Ryuji; Naruse, Makoto; Nakayama, Hirotaka; Tate, Naoya; Shiraki, Atsushi; Kakue, Takashi; Shimobaba, Tomoyoshi; Ohtsu, Motoichi; Ito, Tomoyoshi

2015-02-16

In this study, we propose and experimentally demonstrate a volumetric display system based on quantum dots (QDs) embedded in a polymer substrate. Unlike conventional volumetric displays, our system does not require electrical wiring; thus, the heretofore unavoidable issue of occlusion is resolved because irradiation by external light supplies the energy to the light-emitting voxels formed by the QDs. By exploiting the intrinsic attributes of the QDs, the system offers ultrahigh definition and a wide range of colours for volumetric displays. In this paper, we discuss the design, implementation and characterization of the proposed volumetric display's first prototype. We developed an 8 × 8 × 8 display comprising two types of QDs. This display provides multicolour three-type two-dimensional patterns when viewed from different angles. The QD-based volumetric display provides a new way to represent images and could be applied in leisure and advertising industries, among others.

Highly Efficient Organic Photovoltaic Cells from Polymer-Aligned Carbon Nanotube Dispersed Heterojunctions

DTIC Science & Technology

2009-09-01

semiconducting VA-SWNTs, and muiltcomponent micropatterns of VA- CNTs . We also designed and synthesized several classes of novel low bandgap...photovoltaic active polymers, and polymer-/TiO2–coated VA- CNTs , critical to developing high efficient polymer photovoltaic cells and dye-sensitized solar...an efficient solar absorption and charge separation/collection. Besides, novel N-doped CNT fuel cells, polymer/quantum dot light-emitting diodes, and

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes.

PubMed

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-19

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at ~ 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at ~ 5 V, the highest luminance (160 cd/m 2 ) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

Tailoring Quantum Dot Assemblies to Extend Exciton Coherence Times and Improve Exciton Transport

NASA Astrophysics Data System (ADS)

Seward, Kenton; Lin, Zhibin; Lusk, Mark

2012-02-01

The motion of excitons through nanostructured assemblies plays a central role in a wide range of physical phenomena including quantum computing, molecular electronics, photosynthetic processes, excitonic transistors and light emitting diodes. All of these technologies are severely handicapped, though, by quasi-particle lifetimes on the order of a nanosecond. The movement of excitons must therefore be as efficient as possible in order to move excitons meaningful distances. This is problematic for assemblies of small Si quantum dots (QDs), where excitons quickly localize and entangle with dot phonon modes. Ensuing exciton transport is then characterized by a classical random walk reduced to very short distances because of efficient recombination. We use a combination of master equation (Haken-Strobl) formalism and density functional theory to estimate the rate of decoherence in Si QD assemblies and its impact on exciton mobility. Exciton-phonon coupling and Coulomb interactions are calculated as a function of dot size, spacing and termination to minimize the rate of intra-dot phonon entanglement. This extends the time over which more efficient exciton transport, characterized by partial coherence, can be maintained.

Highly pure yellow light emission of perovskite CsPb(BrxI1-x)3 quantum dots and their application for yellow light-emitting diodes

NASA Astrophysics Data System (ADS)

He, Yuandan; Gong, Jinhui; Zhu, Yiyuan; Feng, Xingcan; Peng, Hong; Wang, Wei; He, Haiyang; Liu, Hu; Wang, Li

2018-06-01

High-quality all-inorganic perovskite CsPb(BrxI1-x)3 quantum dots (QDs) with quantum yield of 50% were systematically studied as yellow light convertor for light emitting diodes (LEDs). A novel heat insulation structure was designed for the QD-converted yellow LEDs. In this structure, a silicone layer was set on top of the GaN LED chip to prevent directly heating of the QDs by the LED chip. Then the CsPb(BrxI1-x)3 QDs were filled in the bowl-shaped silicone layer after ultrasonic dispersion treatment. Finally, an Al2O3 passivation layer was grown on the QDs layer by Atomic Layer Disposition at 40 °C. When x = 0.55, highly pure yellow LEDs with an emission peak at ∼570 nm and a full width at half maximum of 25 nm were achieved. The chromaticity coordinates of the QD-converted yellow LEDs (0.4920 ± 0.0017, 0.4988 ± 0.0053) showed almost no variation under driving current from 5 mA to 150 mA. During an operation period of 60 min, the emission wavelength of the yellow LEDs showed no distinct shift. Moreover, the luminous efficiency of the QD-converted yellow LEDs achieved 13.51 l m/W at 6 mA. These results demonstrated that CsPb(BrxI1-x)3 QDs and the heat insulation structure are promising candidate for high purity yellow LEDs.

Investigation of Exciton Recombination Zone in Quantum Dot Light-Emitting Diodes Using a Fluorescent Probe.

PubMed

Huang, Xiaoyu; Zhang, Heng; Xu, Dingxin; Wen, Feng; Chen, Shuming

2017-08-23

Exciton recombination zone, where the photons are generated, can greatly affect the performance, such as the efficiency and color purity, of the quantum dot (QD) light-emitting diodes (QLEDs). To probe the exciton recombination zone, 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) is doped into the charge transport layer as a fluorescent sensor; by monitoring the Förster resonant energy transfer (FRET) between QD and DCJTB, the location of the recombination zone can be determined. It is found that the electron transport layer (ETL) has a great impact on the recombination zone. For example, in QLEDs with ZnMgO ETL, the recombination zone is near the interface of the QD/hole transport layer (HTL) and is shifted to the interface of the QD/ETL as the driving voltage is increased, whereas in devices with 1,3,5-tris(2-N-phenylbenzimidazolyl) benzene (TPBi) ETL, the recombination zone is close to the interface of the QD/ETL and moved to the interface of the QD/HTL with the increase in the driving voltage. Our results can also clarify the light emission mechanism in QLEDs. In devices with ZnMgO ETL, the emission is dominated by the direct charge recombination, whereas in devices with TPBi ETL, the emission is contributed by both FRET and direct charge recombination. Our studies suggest that fluorescent probe can be a powerful tool for investigating the exciton recombination zone, light emission mechanism, and other fundamental processes in QLEDs.

Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

PubMed Central

Rastelli, A; Schmidt, OG; Ulrich, SM; Michler, P

2006-01-01

We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.

Laser direct-write and crystallization of FeSi II micro-dot array for NIR light-emitting device application

NASA Astrophysics Data System (ADS)

Narazaki, Aiko; Kurosaki, Ryozo; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki

2007-02-01

We printed FeSi II micro-dot array on various kinds of substrates utilizing laser-induced forward transfer (LIFT). An amorphous FeSi II was deposited by sputtering on a transparent plate as a source film. A single KrF excimer laser pulse through a mask-projection system was imaged with a small micrometer-sized grid pattern onto a film/plate interface, resulting in the deposition of FeSi II micro-dot array on a facing substrate with a high number density of 10 4 mm -2. FeSi II in the β crystalline phase is a promising eco-friendly semiconductor because of NIR electroluminescence used for optical networking as well as abundant components reserve on the earth and non-toxicity. However, the β-FeSi II film fabrication generally required high-temperature multi-processes which hamper its integration and performance reproducibility. Using the LIFT of micro-dot array, we succeeded in room-temperature preparation of β-FeSi II. Micro-Raman spectroscopy confirmed the β crystalline phase in the micro-dots deposited on an unheated silica glass substrate. Thus, the LIFT is useful for integrating functional micro-dot array accompanied by the crystallization at lower temperatures.

Phosphor-free nanopyramid white light-emitting diodes grown on (101{sup ¯}1) planes using nanospherical-lens photolithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kui; Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084; Wei, Tongbo, E-mail: tbwei@semi.ac.cn

2013-12-09

We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO{sub 2} mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the (101{sup ¯}1) planes towards the substrate and the perpendicular direction to the (101{sup ¯}1) planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was foundmore » that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.« less

White light emitting device based on single-phase CdS quantum dots.

PubMed

Li, Feng; Nie, Chao; You, Lai; Jin, Xiao; Zhang, Qin; Qin, Yuancheng; Zhao, Feng; Song, Yinglin; Chen, Zhongping; Li, Qinghua

2018-05-18

White light emitting diodes (WLEDs) based on quantum dots (QDs) are emerging as robust candidates for white light sources, however they are suffering from the problem of energy loss resulting from the re-absorption and self-absorption among the employed QDs of different peak wavelengths. It still remains a challenging task to construct WLEDs based on single-phase QD emitters. Here, CdS QDs with short synthesis times are introduced to the fabrication of WLEDs. With a short synthesis time, on one hand, CdS QDs with a small diameter with blue emission can be obtained. On the other hand, surface reconstruction barely has time to occur, and the surface is likely defect-ridden, which enables the existence of a broad emission covering the range of green, yellow and red regions. This is essential for the white light emission of CdS QDs, and is very important for WLED applications. The temporal evolution of the PL spectra for CdS QDs was obtained to investigate the influence of growth time on the luminescent properties. The CdS QDs with a growth time of 0.5 min exhibited a colour rendering index (CRI) of 79.5 and a correlated colour temperature (CCT) of 6238 K. With increasing reaction time, the colour coordinates of the CdS QDs will move away from the white light region in the CIE 1931 chromaticity diagram. By integrating the as prepared white light emission CdS QDs with a violet GaN chip, WLEDs were fabricated. The fabricated WLEDs exhibited a CRI of 87.9 and a CCT of 4619 K, which satisfy the demand of general illumination. The luminous flux and the luminous efficiency of the fabricated WLEDs, being less advanced than current commercial white light sources, can be further improved, meaning there is a need for much more in-depth studies on white light emission CdS QDs.

White light emitting device based on single-phase CdS quantum dots

NASA Astrophysics Data System (ADS)

Li, Feng; Nie, Chao; You, Lai; Jin, Xiao; Zhang, Qin; Qin, Yuancheng; Zhao, Feng; Song, Yinglin; Chen, Zhongping; Li, Qinghua

2018-05-01

White light emitting diodes (WLEDs) based on quantum dots (QDs) are emerging as robust candidates for white light sources, however they are suffering from the problem of energy loss resulting from the re-absorption and self-absorption among the employed QDs of different peak wavelengths. It still remains a challenging task to construct WLEDs based on single-phase QD emitters. Here, CdS QDs with short synthesis times are introduced to the fabrication of WLEDs. With a short synthesis time, on one hand, CdS QDs with a small diameter with blue emission can be obtained. On the other hand, surface reconstruction barely has time to occur, and the surface is likely defect-ridden, which enables the existence of a broad emission covering the range of green, yellow and red regions. This is essential for the white light emission of CdS QDs, and is very important for WLED applications. The temporal evolution of the PL spectra for CdS QDs was obtained to investigate the influence of growth time on the luminescent properties. The CdS QDs with a growth time of 0.5 min exhibited a colour rendering index (CRI) of 79.5 and a correlated colour temperature (CCT) of 6238 K. With increasing reaction time, the colour coordinates of the CdS QDs will move away from the white light region in the CIE 1931 chromaticity diagram. By integrating the as prepared white light emission CdS QDs with a violet GaN chip, WLEDs were fabricated. The fabricated WLEDs exhibited a CRI of 87.9 and a CCT of 4619 K, which satisfy the demand of general illumination. The luminous flux and the luminous efficiency of the fabricated WLEDs, being less advanced than current commercial white light sources, can be further improved, meaning there is a need for much more in-depth studies on white light emission CdS QDs.

Integrated smartphone imaging of quantum dot photoluminescence and Förster resonance energy transfer

NASA Astrophysics Data System (ADS)

Petryayeva, Eleonora; Algar, W. Russ

2015-06-01

Smartphones and other mobile devices are emerging as promising analytical platforms for point-of-care diagnostics, particularly when combined with nanotechnology. For example, we have shown that the optical properties of semiconductor quantum dots (QDs) are well suited to photoluminescence (PL) detection with a smartphone camera. However, this previous work has utilized an external excitation source for interrogation of QD PL. In this proceeding, we demonstrate that the white-light LED photographic flashes built into smartphones can be optically filtered to yield blue light suitable for excitation of QD PL. Measurements were made by recording video with filtered flash illumination and averaging the frames of the video to obtain images with good signal-to-background ratios. These images permitted detection of green-emitting and red-emitting QDs at levels comparable to those possible with excitation using an external long-wave UV lamp. The optical properties of QDs proved to be uniquely suited to smartphone PL imaging, exhibiting emission that was 1-2 orders magnitude brighter than that of common fluorescent dyes under the same conditions. Excitation with the smartphone flash was also suitable for imaging of FRET between green-emitting QD donors and Alexa Fluor 555 (A555) fluorescent dye acceptors. No significant difference in FRET imaging capability was observed between excitation with the smartphone flash and a long-wave UV lamp. Although the smartphone flash did have some disadvantages compared to an external UV lamp, these disadvantages are potentially offset by the benefit of having excitation and detection integrated into the smartphone.

Design and Synthesis of Antiblinking and Antibleaching Quantum Dots in Multiple Colors via Wave Function Confinement.

PubMed

Cao, Hujia; Ma, Junliang; Huang, Lin; Qin, Haiyan; Meng, Renyang; Li, Yang; Peng, Xiaogang

2016-12-07

Single-molecular spectroscopy reveals that photoluminescence (PL) of a single quantum dot blinks, randomly switching between bright and dim/dark states under constant photoexcitation, and quantum dots photobleach readily. These facts cast great doubts on potential applications of these promising emitters. After ∼20 years of efforts, synthesis of nonblinking quantum dots is still challenging, with nonblinking quantum dots only available in red-emitting window. Here we report synthesis of nonblinking quantum dots covering most part of the visible window using a new synthetic strategy, i.e., confining the excited-state wave functions of the core/shell quantum dots within the core quantum dot and its inner shells (≤ ∼5 monolayers). For the red-emitting ones, the new synthetic strategy yields nonblinking quantum dots with small sizes (∼8 nm in diameter) and improved nonblinking properties. These new nonblinking quantum dots are found to be antibleaching. Results further imply that the PL blinking and photobleaching of quantum dots are likely related to each other.

Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots

NASA Astrophysics Data System (ADS)

Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

2018-05-01

In this work, we prepared CdTe quantum dots, and series of Cd1-xMnxTe-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd1-xMnxTe-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd1-xMnxTe-alloyed quantum dots which confirmed the successful ion-exchange reaction.

Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip

NASA Astrophysics Data System (ADS)

Mancini, L.; Moyon, F.; Houard, J.; Blum, I.; Lefebvre, W.; Vurpillot, F.; Das, A.; Monroy, E.; Rigutti, L.

2017-12-01

Single-dot time-resolved micro-photoluminescence spectroscopy and correlated electron tomography (ET) have been performed on self-assembled GaN/AlN quantum dots isolated within a field-emission nanoscale tip by focused ion beam (FIB). Despite the effect of the FIB, the system conserves the capability of emitting light through multi-excitonic complexes. The optical spectroscopy data have then been correlated with the electronic structure and lifetime parameters that could be extracted using the structural parameters obtained by ET via a 6 band k.p model. A biexciton-exciton cascade could be identified and thoroughly analysed. The biexciton-exciton states exhibit a non-negligible polarization component along the [0001] polar crystal axis, indicating a significant valence band mixing, while the relationship between exciton energy and biexciton binding energy is consistent with a hybrid character of the biexciton.

Development of transition metal dichalcogenide based quantum dots for light emitting diodes

NASA Astrophysics Data System (ADS)

Seth, Subhashree; Sharma, S. K.

2018-05-01

Photoluminescent quantum dots (QDs) were synthesized by facile colloidal chemical route. Its properties were characterized and analysed by utilizing Fluorescence, FTIR and UV-Vis spectrophotometers. The resultant MoS2 QD exhibits fluorescence at 470 nm for excitation wavelength 400 nm. The as prepared sample exhibits excitation dependent emission due to polydispersion of MoS2 in the dispersive medium which is the characteristics of colloidal synthesis. It is also observed that resultant MoS2 QDs show size tunable emission in the visible region. The FTIR spectrum confirms the attachment of oleic acid on the surface of MoS2. Absorption spectrum shows a band at 346 nm and a shoulder band at 400 nm. The band gap of quantum dots was obtained as 3.5 eV. CIE diagram indicates the shifting of colour coordinates towards green region with increasing excitation wavelength.

High-performance semiconductor quantum-dot single-photon sources

NASA Astrophysics Data System (ADS)

Senellart, Pascale; Solomon, Glenn; White, Andrew

2017-11-01

Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.

Semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

DOEpatents

Goyal, Amit

2014-08-05

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit

2015-03-24

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes

NASA Astrophysics Data System (ADS)

Hestroffer, Karine; Sperlich, Dennis; Dadgostar, Shabnam; Golz, Christian; Krumland, Jannis; Masselink, William Ted; Hatami, Fariba

2018-05-01

The transport properties of n- and p-doped AlP layers grown by gas-source molecular beam epitaxy are investigated. n- and p-types of conductivities are achieved using Si and Be with peak room-temperature mobilities of 59.6 cm2/Vs and 65.0 cm2/Vs for electrons and holes, respectively. Si-doping results are then used for the design of n-doped AlP/GaP distributed Bragg reflectors (DBRs) with an ohmic resistance of about 7.5 ± 0.1 Ω. The DBRs are integrated as bottom mirrors in GaP-based light-emitting diodes (LEDs) containing InGaP/GaP quantum dots. The functionality of the LED structure and the influence of the DBRs on the InGaP/GaP electroluminescence spectra are demonstrated.

Quality factor of luminescent solar concentrators and practical concentration limits attainable with semiconductor quantum dots

DOE PAGES

Klimov, Victor I.; Baker, Thomas A.; Lim, Jaehoon; ...

2016-05-09

In this study, luminescent solar concentrators (LSCs) can be utilized as both large-area collectors of solar radiation supplementing traditional photovoltaic cells as well as semitransparent “solar windows” that provide a desired degree of shading and simultaneously serve as power-generation units. An important characteristic of an LSC is a concentration factor (C) that can be thought of as a coefficient of effective enlargement (or contraction) of the area of a solar cell when it is coupled to the LSC. Here we use analytical and numerical Monte Carlo modeling in addition to experimental studies of quantum-dot-based LSCs to analyze the factors thatmore » influence optical concentration in practical devices. Our theoretical model indicates that the maximum value of C achievable with a given fluorophore is directly linked to the LSC quality factor (Q LSC) defined as the ratio of absorption coefficients at the wavelengths of incident and reemitted light. In fact, we demonstrate that the ultimate concentration limit (C 0) realized in large-area devices scales linearly with the LSC quality factor and in the case of perfect emitters and devices without back reflectors is approximately equal to Q LSC. To test the predictions of this model, we conduct experimental studies of LSCs based on visible-light emitting II–VI core/shell quantum dots with two distinct LSC quality factors. We also investigate devices based on near-infrared emitting CuInSe xS 2–x quantum dots for which the large emission bandwidth allows us to assess the impact of varied Q LSC on the concentration factor by simply varying the detection wavelength. In all cases, we find an excellent agreement between the model and the experimental observations, suggesting that the developed formalism can be utilized for express evaluation of prospective LSC performance based on the optical spectra of LSC fluorophores, which should facilitate future efforts on the development of high-performance devices based on quantum dots as well as other types of emitters.« less

Quality factor of luminescent solar concentrators and practical concentration limits attainable with semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klimov, Victor I.; Baker, Thomas A.; Lim, Jaehoon

In this study, luminescent solar concentrators (LSCs) can be utilized as both large-area collectors of solar radiation supplementing traditional photovoltaic cells as well as semitransparent “solar windows” that provide a desired degree of shading and simultaneously serve as power-generation units. An important characteristic of an LSC is a concentration factor (C) that can be thought of as a coefficient of effective enlargement (or contraction) of the area of a solar cell when it is coupled to the LSC. Here we use analytical and numerical Monte Carlo modeling in addition to experimental studies of quantum-dot-based LSCs to analyze the factors thatmore » influence optical concentration in practical devices. Our theoretical model indicates that the maximum value of C achievable with a given fluorophore is directly linked to the LSC quality factor (Q LSC) defined as the ratio of absorption coefficients at the wavelengths of incident and reemitted light. In fact, we demonstrate that the ultimate concentration limit (C 0) realized in large-area devices scales linearly with the LSC quality factor and in the case of perfect emitters and devices without back reflectors is approximately equal to Q LSC. To test the predictions of this model, we conduct experimental studies of LSCs based on visible-light emitting II–VI core/shell quantum dots with two distinct LSC quality factors. We also investigate devices based on near-infrared emitting CuInSe xS 2–x quantum dots for which the large emission bandwidth allows us to assess the impact of varied Q LSC on the concentration factor by simply varying the detection wavelength. In all cases, we find an excellent agreement between the model and the experimental observations, suggesting that the developed formalism can be utilized for express evaluation of prospective LSC performance based on the optical spectra of LSC fluorophores, which should facilitate future efforts on the development of high-performance devices based on quantum dots as well as other types of emitters.« less

Ex post manipulation of barriers in InGaAs tunnel injection devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talalaev, Vadim G.; Fock Institute of Physics, St. Petersburg State University, St. Petersburg 198504; Cirlin, George E.

Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

Quantitative imaging and in situ concentration measurements of quantum dot nanomaterials in variably saturated porous media

DOE PAGES

Uyuşur, Burcu; Snee, Preston T.; Li, Chunyan; ...

2016-01-01

Knowledge of the fate and transport of nanoparticles in the subsurface environment is limited, as techniques to monitor and visualize the transport and distribution of nanoparticles in porous media and measure their in situ concentrations are lacking. To address these issues, we have developed a light transmission and fluorescence method to visualize and measure in situ concentrations of quantum dot (QD) nanoparticles in variably saturated environments. Calibration cells filled with sand as porous medium and various known water saturation levels and QD concentrations were prepared. By measuring the intensity of the light transmitted through porous media exposed to fluorescent lightmore » and by measuring the hue of the light emitted by the QDs under UV light exposure, we obtained simultaneously in situ measurements of water saturation and QD nanoparticle concentrations with high spatial and temporal resolutions. Water saturation was directly proportional to the light intensity. A linear relationship was observed between hue-intensity ratio values and QD concentrations for constant water saturation levels. Lastly, the advantages and limitations of the light transmission and fluorescence method as well as its implications for visualizing and measuring in situ concentrations of QDs nanoparticles in the subsurface environment are discussed.« less

Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots.

PubMed

Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

2018-05-02

In this work, we prepared CdTe quantum dots, and series of Cd 1-x Mn x Te-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn 2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd 1-x Mn x Te-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd 1-x Mn x Te-alloyed quantum dots which confirmed the successful ion-exchange reaction.

Photoluminescence Spectra From The Direct Energy Gap of a-SiQDs

NASA Astrophysics Data System (ADS)

Abdul-Ameer, Nidhal M.; Abdulrida, Moafak C.; Abdul-Hakeem, Shatha M.

2018-05-01

A theoretical model for radiative recombination in amorphous silicon quantum dots (a-SiQDs) was developed. In this model, for the first time, the coexistence of both spatial and quantum confinements were considered. Also, it is found that the photoluminescence exhibits significant size dependence in the range (1-4) nm of the quantum dots. a-SiQDs show visible light emission peak energies and high radiative quantum efficiency at room temperature,in contrast to bulk a-Si structures. The quantum efficiency is sensitive to any change in defect density (the volume nonradiative centers density and/or the surface nonradiative centers density) but, with small dots sizes, the quantum efficiency is insensitive to such defects. Our analysis shows that the photoluminescence intensity increases or decreases by the effect of radiative quantum efficiency. By controlling the size of a-SiQDs, we note that the energy of emission can be tuned. The blue shift is attributed to quantum confinement effect. Meanwhile, the spatial confinement effect is clearly observed in red shift in emission spectra. we found a good agreement with the experimental published data. Therefore, we assert that a-SiQDs material is a promising candidate for visible, tunable, and high performance devices of light emitting.

Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths

NASA Astrophysics Data System (ADS)

Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.

2013-05-01

In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.

Mn(II)-coordinated Fluorescent Carbon Dots: Preparation and Discrimination of Organic Solvents

NASA Astrophysics Data System (ADS)

Wang, Yuru; Wang, Tianren; Chen, Xi; Xu, Yang; Li, Huanrong

2018-04-01

Herein, we prepared a Mn(II)-coordinated carbon dots (CDs) with fluorescence and MRI (magnetic resonance imaging) bimodal properties by a one-pot solvothermal method and separated via silica column chromatography. The quantum yield of the CDs increased greatly from 2.27% to 6.75% with increase of Mn(II) doping, meanwhile the CDs exhibited a higher MR activity (7.28 mM-1s-1) than that of commercial Gd-DTPA (4.63 mM-1s-1). In addition, white light emitting CDs were obtained by mixing the different types of CDs. Notably, these CDs exhibited different fluorescence emissions in different organic solvents and could be used to discriminate organic solvents based on the polarity and protonation of the solvents.

Quantum properties of light emitted by dipole nano-laser

NASA Astrophysics Data System (ADS)

Ghannam, Talal

Recent technological advances allow entire optical systems to be lithographically implanted on small silicon chips. These systems include tiny semiconductor lasers that function as light sources for digital optical signals. Future advances will rely on even smaller components. At the theoretical limit of this process, the smallest lasers will have an active medium consisting of a single atom (natural or artificial). Several suggestions for how this can be accomplished have already been published, such as nano-lasers based on photonic crystals and nano wires. In particular, the "dipole nanolaser" consists of a single quantum dot functioning as the active medium. It is optically coupled to a metal nanoparticles that form a resonant cavity. Laser light is generated from the near-field optical signal. The proposed work is a theoretical exploration of the nature of the resulting laser light. The dynamics of the system will be studied and relevant time scales described. These will form the basis for a set of operator equations describing the quantum properties of the emitted light. The dynamics will be studied in both density matrix and quantum Langevin formulations, with attention directed to noise sources. The equations will be linearized and solved using standard techniques. The result of the study will be a set of predicted noise spectra describing the statistics of the emitted light. The goal will be to identify the major noise contributions and suggest methods for suppressing them. This will be done by studying the probability of getting squeezed light from the nanoparticle for the certain scheme of parameters.

Blue light hazard performance comparison of phosphor-converted LED sources with red quantum dots and red phosphor

NASA Astrophysics Data System (ADS)

Zhang, Jingjing; Xie, Bin; Yu, Xingjian; Luo, Xiaobing; Zhang, Tao; Liu, Shishen; Yu, Zhihua; Liu, Li; Jin, Xing

2017-07-01

In this study, the blue light hazard performances of phosphor converted-light-emitting diodes (pc-LEDs) with red phosphor and red quantum dots (QDs) were compared and analyzed by spectral optimization, which boosts the minimum attainable blue light hazard efficiency of radiation (BLHER) at high values of color rendering index (CRI) and luminous efficacy of radiation (LER) when the correlated color temperature (CCT) value changes from 1800 to 7800 K. It is found that the minimal BLHER value increases with the increase in the CCT value, and the minimal BLHER values of the two spectral models are nearly the same. Note that the QDs' model has advantages at CCT coverage under the same constraints of CRI and LER. Then, the relationships between minimal BLHER, CRI, CCT, and LER of pc-LEDs with QDs' model were analyzed. It is found that the minimal BLHER values are nearly the same when the CRI value changes from 50 to 90. Therefore, the influence of CRI on minimal BLHER is insignificant. Minimal BLHER increases with the increase in the LER value from 240 to 360 lm/W.

{100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit [Knoxville, TN

2012-05-15

Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

PubMed

Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

2017-04-12

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas.

PubMed

Sahu, Bibhuti Bhusan; Yin, Yongyi; Han, Jeon Geon; Shiratani, Masaharu

2016-06-21

The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3-0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.

Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes

PubMed Central

Tae Lim, Jong; Lee, Hyunkoo; Cho, Hyunsu; Kwon, Byoung-Hwa; Sung Cho, Nam; Kuk Lee, Bong; Park, Jonghyurk; Kim, Jaesu; Han, Jun-Han; Yang, Jong-Heon; Yu, Byoung-Gon; Hwang, Chi-Sun; Chu Lim, Seong; Lee, Jeong-Ik

2015-01-01

Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device. Here, a multilayered graphene (MLG) as a top electrode is successfully implanted, via dry bonding, onto the top organic layer of transparent OLED (TOLED) with flexion patterns. The performance of the TOLED with MLG electrode is comparable to that of a conventional TOLED with a semi-transparent thin-Ag top electrode, because the MLG electrode makes a contact with the TOLED with no residue. In addition, we successfully fabricate a large-size transparent segment panel using the developed MLG electrode. Therefore, we believe that the flexion bonding technology presented in this work is applicable to various optoelectronic devices. PMID:26626439

Photoluminescence of carbon dots from mesoporous silica

NASA Astrophysics Data System (ADS)

Nelson, D. K.; Razbirin, B. S.; Starukhin, A. N.; Eurov, D. A.; Kurdyukov, D. A.; Stovpiaga, E. Yu; Golubev, V. G.

2016-09-01

Photophysical properties of carbon dots were investigated under various excitation conditions and over a wide temperature region - from room to liquid helium temperatures. The carbon dots (CDs) were synthesized using mesoporous silica particles as a reactor and (3-aminopropyl)triethoxysilane (APTES) as a precursor. The photoluminescence spectra of CDs exhibit a strong dependence on the excitation wavelength and demonstrate a significant inhomogeneous broadening. Lowering sample temperature reveals the doublet structure of the spectra, which is associated with the vibronic structure of radiative transitions. The vibration energy ∼1200 cm-1 is close to the energy of Csbnd O stretching vibration. Long-lived phosphorescence of carbon dots with its decay time ∼0.2 s at T = 80 K was observed. The fluorescence and phosphorescence spectra are shown to be spectrally separated. The long-lived component of the emission was ascribed to optically forbidden triplet-singlet transitions. The value of the singlet-triplet splitting was found to be about 0.3 eV. Photo-induced polarization of the luminescence of carbon dots was revealed. The degree of the linear polarization is dependent on the wavelengths of both excitation and emitted light. The effect indicates a hidden anisotropy of optical dipole transitions in the dots and demonstrates the loss of the dipole orientation during the electron energy relaxation.

Integrated InAs/InP quantum-dot coherence comb lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lu, Zhenguo; Liu, Jiaren; Poole, Philip J.; Song, Chun-Ying; Webber, John; Mao, Linda; Chang, Shoude; Ding, Heping; Barrios, Pedro J.; Poitras, Daniel; Janz, Siegfried

2017-02-01

Current communication networks needs to keep up with the exponential growth of today's internet traffic, and telecommunications industry is looking for radically new integrated photonics components for new generation optical networks. We at National Research Council (NRC) Canada have successfully developed nanostructure InAs/InP quantum dot (QD) coherence comb lasers (CCLs) around 1.55 μm. Unlike uniform semiconductor layers in most telecommunication lasers, in these QD CCLs light is emitted and amplified by millions of semiconductor QDs less than 60 nm in diameter. Each QD acts like an isolated light source acting independently of its neighbours, and each QD emits light at its own unique wavelength. The end result is a QD CCL is more stable and has ultra-low timing jitter. But most importantly, a single QD CCL can simultaneously produce 50 or more separate laser beams at distinct wavelengths over the telecommunications C-band. Utilizing those unique properties we have put considerable effort well to design, grow and fabricate InAs/InP QD gain materials. After our integrated packaging and using electrical feedback-loop control systems, we have successfully demonstrated ultra-low intensity and phase noise, frequency-stabilized integrated QD CCLs with the repetition rates from 10 GHz to 100 GHz and the total output power up to 60 mW at room temperature. We have investigated their relative intensity noises, phase noises, RF beating signals and other performance of both filtered individual channel and the whole CCLs. Those highly phase-coherence comb lasers are the promising candidates for flexible bandwidth terabit coherent optical networks and signal processing applications.

Scintillating Quantum Dots for Imaging X-rays (SQDIX) for Aircraft Inspection

NASA Technical Reports Server (NTRS)

Burke, Eric (Principal Investigator); Williams, Phillip (Principal Investigator); Dehaven, Stan

2015-01-01

Scintillation is the process currently employed by conventional x-ray detectors to create x-ray images. Scintillating quantum dots or nano-crystals (StQDs) are a novel, nanometer-scale material that upon excitation by x-rays, re-emit the absorbed energy as visible light. StQDs theoretically have higher output efficiency than conventional scintillating materials and are more environmental friendly. This paper will present the characterization of several critical elements in the use of StQDs that have been performed along a path to the use of this technology in wide spread x-ray imaging. Initial work on the SQDIX system has shown great promise to create state-of-the-art sensors using StQDs as a sensor material. In addition, this work also demonstrates a high degree of promise using StQDs in microstructured fiber optics. Using the microstructured fiber as a light guide could greatly increase the capture efficiency a StQDs based imaging sensor.

High-Z Nanoparticle/Polymer Nanocomposites for Gamma-Ray Scintillation Detectors

NASA Astrophysics Data System (ADS)

Liu, Chao

An affordable and reliable solution for spectroscopic gamma-ray detection has long been sought after due to the needs from research, defense, and medical applications. Scintillators resolve gamma energy by proportionally converting a single high-energy photon into a number of photomultiplier-tube-detectable low-energy photons, which is considered a more affordable solution for general purposes compared to the delicate semiconductor detectors. An ideal scintillator should simultaneously exhibit the following characteristics: 1) high atomic number (Z) for high gamma stopping power and photoelectron production; 2) high light yield since the energy resolution is inversely proportional to the square root of light yield; 3) short emission decay lifetime; and 4) low cost and scalable production. However, commercial scintillators made from either inorganic single crystals or plastics fail to satisfy all requirements due to their intrinsic material properties and fabrication limitations. The concept of adding high-Z constituents into plastic scintillators to harness high Z, low cost, and fast emission in the resulting nanocomposite scintillators is not new in and of itself. Attempts have been made by adding organometallics, quantum dots, and scintillation nanocrystals into the plastic matrix. High-Z organometallics have long been used to improve the Z of plastic scintillators; however, their strong spin-orbit coupling effect entails careful triplet energy matching using expensive triplet emitters to avoid severe quenching of the light yield. On the other hand, reported quantum dot- and nanocrystal-polymer nanocomposites suffer from moderate Z and high optical loss due to aggregation and self-absorption at loadings higher than 10 wt%, limiting their potential for practical application. This dissertation strives to improve the performance of nanoparticle-based nanocomposite scintillators. One focus is to synthesize transparent nanocomposites with higher loadings of high-Z inorganic nanoparticles. A facile single-precursor method is first developed to synthesize HfO2 nanoparticles, the highest-Z simple oxide with band gap larger than polyvinyltoluene, with uniform size distribution around 5 nm. A nanoparticle-surface-modification protocol is then developed for the fabrication of transparent nanocomposite monoliths with high nanoparticle loadings (up to 40 wt%). Using this method, transparent HfO2-loaded blue-emitting nanocomposite scintillators (2 mm thick, transmittance at 550 nm >75%) have been fabricated capable of producing a full energy photopeak for 662 keV gamma rays, with the best deconvoluted photopeak energy resolution < 8%, representing a significant improvement over previous nanoparticle-based nanocomposite scintillators. Although the HfO2 work represents a great improvement over previous reports, it is also found in this system that the light yield deteriorates at higher nanoparticle loadings. This is attributed to the trapping of fast electron energy deposited in the non-emitting nanoparticles. To overcome this deterioration issue, a revisit to the previously proposed quantum-dot-loaded nanocomposite scintillator is made with significant improvements. Transparent, ultra-high-loading (up to 60 wt%) CdxZn1-xS/ZnS core/shell quantum dot/polymer nanocomposite monoliths are first synthesized by in situ copolymerization of the partially mathacrylate-functionalized quantum dots in a monomer solution. With efficient Forster resonance energy transfer from the high-atomic-number quantum dots to lower-band-gap organic dyes, quantum-dot-borne excitons are extracted for photon production. The resulting nanocomposites thus exhibit unprecedented simultaneous enhancements in both light yield (visible photons produced per MeV of gamma photon energy) and gamma attenuation power. In a best demonstration, a 60 wt% quantum-dot nanocomposite scintillator exhibits a light yield of 9255 photons/MeV and a photopeak resolution of 9.8% under 662 keV Cs-137 gamma irradiation, demonstrating the potential of this model system for future high-performance low-cost spectroscopic gamma detectors.

Mechanisms of optical orientation of an individual Mn2+ ion spin in a II-VI quantum dot

NASA Astrophysics Data System (ADS)

Smoleński, T.; Cywiński, Ł.; Kossacki, P.

2018-02-01

We provide a theoretical description of the optical orientation of a single Mn2+ ion spin under quasi-resonant excitation demonstrated experimentally by Goryca et al (2009 Phys. Rev. Lett. 103 087401). We build and analyze a hierarchy of models by starting with the simplest assumptions (transfer of perfectly spin-polarized excitons from Mn-free dot to the other dot containing a single Mn2+ spin, followed by radiative recombination) and subsequently adding more features, such as spin relaxation of electrons and holes. Particular attention is paid to the role of the influx of the dark excitons and the process of biexciton formation, which are shown to contribute significantly to the orientation process in the quasi-resonant excitation case. Analyzed scenarios show how multiple features of the excitonic complexes in magnetically-doped quantum dots, such as the values of exchange integrals, spin relaxation times, etc, lead to a plethora of optical orientation processes, characterized by distinct dependencies on light polarization and laser intensity, and occurring on distinct timescales. Comparison with experimental data shows that the correct description of the optical orientation mechanism requires taking into account Mn2+ spin-flip processes occurring not only when the exciton is already in the orbital ground state of the light-emitting dot, but also those that happen during the exciton transfer from high-energy states to the ground state. Inspired by the experimental results on energy relaxation of electrons and holes in nonmagnetic dots, we focus on the process of biexciton creation allowed by mutual spin-flip of an electron and the Mn2+ spin, and we show that by including it in the model, we obtain good qualitative and quantitative agreement with the experimental data on quasi-resonantly driven Mn2+ spin orientation.

N-doped carbon dots derived from bovine serum albumin and formic acid with one- and two-photon fluorescence for live cell nuclear imaging.

PubMed

Tan, Mingqian; Li, Xintong; Wu, Hao; Wang, Beibei; Wu, Jing

2015-12-01

Carbon dots with both one- and two-photon fluorescence have drawn great attention for biomedical imaging. Herein, nitrogen-doped carbon dots were facilely developed by one-pot hydrothermal method using bovine serum albumin and formic acid as carbon sources. They are highly water-soluble with strong fluorescence when excited with ultraviolet or near infrared light. The carbon dots have a diameter of ~8.32 nm and can emit strong two-photon induced fluorescence upon excitation at 750 nm with a femtosecond laser. X-ray photoelectron spectrometer analysis revealed that the carbon dots contained three components, C, N and O, corresponding to the peak at 285, 398 and 532 eV, respectively. The Fourier-transform infrared spectroscopy analysis revealed that there are carboxyl and carboxylic groups on the surface, which allowed further linking of functional molecules. pH stability study demonstrated that the carbon dots are able to be used in a wide range of pH values. The fluorescence mechanism is also discussed in this study. Importantly, these carbon dots are biocompatible and highly photostable, which can be directly applied for both one- and two-photon living cell imaging. After proper surface functionalization with TAT peptide, they can be used as fluorescent probes for live cell nuclear-targeted imaging. Copyright © 2015 Elsevier B.V. All rights reserved.

Two-dimensionally grown single-crystal silicon nanosheets with tunable visible-light emissions.

PubMed

Kim, Sung Wook; Lee, Jaejun; Sung, Ji Ho; Seo, Dong-jae; Kim, Ilsoo; Jo, Moon-Ho; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2014-07-22

Since the discovery of graphene, growth of two-dimensional (2D) nanomaterials has greatly attracted attention. However, spontaneous growth of atomic two-dimensional (2D) materials is limitedly permitted for several layered-structure crystals, such as graphene, MoS2, and h-BN, and otherwise it is notoriously difficult. Here we report the gas-phase 2D growth of silicon (Si), that is cubic in symmetry, via dendritic growth and an interdendritic filling mechanism and to form Si nanosheets (SiNSs) of 1 to 13 nm in thickness. Thin SiNSs show strong thickness-dependent photoluminescence in visible range including red, green, and blue (RGB) emissions with the associated band gap energies ranging from 1.6 to 3.2 eV; these emission energies were greater than those from Si quantum dots (SiQDs) of the similar sizes. We also demonstrated that electrically driven white, as well as blue, emission in a conventional organic light-emitting diode (OLED) geometry with the SiNS assembly as the active emitting layers. Tunable light emissions in visible range in our observations suggest practical implications for novel 2D Si nanophotonics.

Two-Color Single Hybrid Plasmonic Nanoemitters with Real Time Switchable Dominant Emission Wavelength.

PubMed

Zhou, Xuan; Wenger, Jérémie; Viscomi, Francesco N; Le Cunff, Loïc; Béal, Jérémie; Kochtcheev, Serguei; Yang, Xuyong; Wiederrecht, Gary P; Colas des Francs, Gérard; Bisht, Anu Singh; Jradi, Safi; Caputo, Roberto; Demir, Hilmi Volkan; Schaller, Richard D; Plain, Jérôme; Vial, Alexandre; Sun, Xiao Wei; Bachelot, Renaud

2015-11-11

We demonstrate two-color nanoemitters that enable the selection of the dominant emitting wavelength by varying the polarization of excitation light. The nanoemitters were fabricated via surface plasmon-triggered two-photon polymerization. By using two polymerizable solutions with different quantum dots, emitters of different colors can be positioned selectively in different orientations in the close vicinity of the metal nanoparticles. The dominant emission wavelength of the metal/polymer anisotropic hybrid nanoemitter thus can be selected by altering the incident polarization.

Nucleation and Growth Control of ZnO via Impurity-mediated Crystallization

DTIC Science & Technology

2015-01-02

Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells ”, G. Uchida, Y. Wang, D. Ichida, H. Seo, K. Kamataki, N...Electron Transfer of Dye-Sensitized Solar Cell Using Vanadium Doped TiO2 ”, H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S...conductive oxide (TCO) in flat-panel displays, touch screens on smartphones, organic light-emitting diodes (OLEDs), solar cells , etc [1-6]. The resistivity

Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paiella, Roberto; Moustakas, Theodore D.

This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles locatedmore » within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical control. The results of these studies provide fundamental new understanding of optical processes at the nanoscale, including near-field energy transfer between quantum emitters and photonic nanostructures, dissipation phenomena of plasmonic excitations, and radiation from nanoantennas. Furthermore, they may open the way to entirely new device concepts and applications, in a broad range of disciplines including optoelectronics, sensing, spectroscopy, photovoltaics, and quantum information science. A specific application of particularly strong relevance to the DOE mission is the development of energy efficient LED active materials for solid-state lighting, based on plasmonic enhancement effects.« less

Engineering of Semiconductor Nanocrystals for Light Emitting Applications

PubMed Central

Todescato, Francesco; Fortunati, Ilaria; Minotto, Alessandro; Signorini, Raffaella; Jasieniak, Jacek J.; Bozio, Renato

2016-01-01

Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs) provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies. PMID:28773794

Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide

NASA Astrophysics Data System (ADS)

Haffouz, Sofiane; Zeuner, Katharina D.; Dalacu, Dan; Poole, Philip J.; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D.; Zwiller, Valery; Williams, Robin L.

2018-05-01

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission from single InAsP quantum dots with an unprecedented tuning range from 880nm to 1550nm. These results pave the way towards efficient single photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

PubMed Central

Cirlin, GE; Tonkikh, AA; Zakharov, ND; Werner, P; Gösele, U; Tomm, JW; Elsaesser, T

2006-01-01

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm.

Charge transport in strongly coupled quantum dot solids

NASA Astrophysics Data System (ADS)

Kagan, Cherie R.; Murray, Christopher B.

2015-12-01

The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

Charge transport in strongly coupled quantum dot solids.

PubMed

Kagan, Cherie R; Murray, Christopher B

2015-12-01

The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

Strong localization induced anomalous temperature dependence exciton emission above 300 K from SnO{sub 2} quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, S. S., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn; Li, F. D.; Liu, Q. W.

2015-05-07

SnO{sub 2} quantum dots (QDs) are potential materials for deep ultraviolet (DUV) light emitting devices. In this study, we report the temperature and excitation power-dependent exciton luminescence from SnO{sub 2} QDs. The exciton emission exhibits anomalous blue shift, accompanied with band width reduction with increasing temperature and excitation power above 300 K. The anomalous temperature dependences of the peak energy and band width are well interpreted by the strongly localized carrier thermal hopping process and Gaussian shape of band tails states, respectively. The localized wells and band tails at conduction minimum are considered to be induced by the surface oxygen defectsmore » and local potential fluctuation in SnO{sub 2} QDs.« less

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness.

PubMed

Chen, Cheng; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhang, Wei; Liang, Renli; Dai, Jiangnan; Chen, Changqing

2016-12-01

We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness

NASA Astrophysics Data System (ADS)

Chen, Cheng; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhang, Wei; Liang, Renli; Dai, Jiangnan; Chen, Changqing

2016-10-01

We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

Magnetic enhancement of photoluminescence from blue-luminescent graphene quantum dots

NASA Astrophysics Data System (ADS)

Chen, Qi; Shi, Chentian; Zhang, Chunfeng; Pu, Songyang; Wang, Rui; Wu, Xuewei; Wang, Xiaoyong; Xue, Fei; Pan, Dengyu; Xiao, Min

2016-02-01

Graphene quantum-dots (GQDs) have been predicted and demonstrated with fascinating optical and magnetic properties. However, the magnetic effect on the optical properties remains experimentally unexplored. Here, we conduct a magneto-photoluminescence study on the blue-luminescence GQDs at cryogenic temperatures with magnetic field up to 10 T. When the magnetic field is applied, a remarkable enhancement of photoluminescence emission has been observed together with an insignificant change in circular polarization. The results have been well explained by the scenario of magnetic-field-controlled singlet-triplet mixing in GQDs owing to the Zeeman splitting of triplet states, which is further verified by temperature-dependent experiments. This work uncovers the pivotal role of intersystem crossing in GQDs, which is instrumental for their potential applications such as light-emitting diodes, photodynamic therapy, and spintronic devices.

Tunable Quantum Dot Solids: Impact of Interparticle Interactions on Bulk Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinclair, Michael B.; Fan, Hongyou; Brener, Igal

2015-09-01

QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. Duringmore » the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.« less

Peptide-coated semiconductor quantum dots and their applications in biological imaging of single molecules in live cells and organisms

NASA Astrophysics Data System (ADS)

Pinaud, Fabien Florent

2007-12-01

A new surface chemistry has been developed for the solubilization and biofunctionalization of inorganic semiconductor nanocrystals fluorescent probes, also known as quantum dots. This chemistry is based on the surface coating of quantum dots with custom-designed polycysteine peptides and yields water-soluble, small, monodispersed and colloidally stable probes that remain bright and photostable in complex biological milieus. This peptide coating strategy was successfully tested on several types of core and core-shell quantum dots emitting from the visible (e.g. CdSe/ZnS) to the NIR spectrum range (e.g. CdTe/CdSe/ZnS). By taking advantage of the versatile physico-chemical properties of peptides, a peptide "toolkit" was designed and employed to impart several biological functions to individual quantum dots and control their biochemical activity at the nanometer scale. These biofunctionalized peptide-coated quantum dots were exploited in very diverse biological applications. Near-infrared emitting quantum dot probes were engineered with optimized blood circulation and biodistribution properties for in vivo animal imaging. Visible emitting quantum dots were used for single molecule tracking of raft-associated GPI-anchored proteins in live cells. This last application revealed the presence of discrete and non-caveolar lipid microdomains capable of impeding free lateral diffusions in the plasma membrane of Hela cells. Imaging and tracking of peptide-coated quantum dots provided the first direct evidence that microdomains having the composition and behavior expected for lipid rafts can induce molecular compartmentalization in the membrane of living cells.

Dead Star Creates Celestial Havoc

NASA Technical Reports Server (NTRS)

2006-01-01

A star's spectacular death in the constellation Taurus was observed on Earth as the supernova of 1054 A.D. Now, almost a thousand years later, a superdense neutron star left behind by the stellar death is spewing out a blizzard of extremely high-energy particles into the expanding debris field known as the Crab Nebula.

This composite image uses data from three of NASA's Great Observatories. The Chandra X-ray image is shown in light blue, the Hubble Space Telescope optical images are in green and dark blue, and the Spitzer Space Telescope's infrared image is in red. The size of the X-ray image is smaller than the others because ultrahigh-energy X-ray emitting electrons radiate away their energy more quickly than the lower-energy electrons emitting optical and infrared light. The neutron star, which has the mass equivalent to the sun crammed into a rapidly spinning ball of neutrons twelve miles across, is the bright white dot in the center of the image.

Dead Star Creates Celestial Havoc

NASA Image and Video Library

2006-10-27

A star's spectacular death in the constellation Taurus was observed on Earth as the supernova of 1054 A.D. Now, almost a thousand years later, a superdense neutron star left behind by the stellar death is spewing out a blizzard of extremely high-energy particles into the expanding debris field known as the Crab Nebula. This composite image uses data from three of NASA's Great Observatories. The Chandra X-ray image is shown in light blue, the Hubble Space Telescope optical images are in green and dark blue, and the Spitzer Space Telescope's infrared image is in red. The size of the X-ray image is smaller than the others because ultrahigh-energy X-ray emitting electrons radiate away their energy more quickly than the lower-energy electrons emitting optical and infrared light. The neutron star, which has the mass equivalent to the sun crammed into a rapidly spinning ball of neutrons twelve miles across, is the bright white dot in the center of the image. http://photojournal.jpl.nasa.gov/catalog/PIA01320

A quantum light-emitting diode for the standard telecom window around 1,550 nm.

PubMed

Müller, T; Skiba-Szymanska, J; Krysa, A B; Huwer, J; Felle, M; Anderson, M; Stevenson, R M; Heffernan, J; Ritchie, D A; Shields, A J

2018-02-28

Single photons and entangled photon pairs are a key resource of many quantum secure communication and quantum computation protocols, and non-Poissonian sources emitting in the low-loss wavelength region around 1,550 nm are essential for the development of fibre-based quantum network infrastructure. However, reaching this wavelength window has been challenging for semiconductor-based quantum light sources. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region. Using the biexciton cascade mechanism, they also produce entangled photons with a fidelity of 87 ± 4%, sufficient for the application of one-way error correction protocols. The material system further allows for entangled photon generation up to an operating temperature of 93 K. Our quantum photon source can be directly integrated with existing long distance quantum communication and cryptography systems, and provides a promising material platform for developing future quantum network hardware.

Fabrication of CuInS2/ZnS quantum dots-based white light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Hsiao, Chih-Chun; Su, Yu-Sheng; Chung, Shu-Ru

2017-09-01

Among solid-state lighting technology, phosphor-converted white light-emitting diodes (pc-WLEDs) are excellent candidates to replace incandescent lamps for their merit of high energy conservation, long lifetime, high luminous efficiency as well as polarized emissions. Semiconductor quantum dots (QDs) are emerging color tunable emissive light converters. They have shown significant promise as light emitters, as solar cells, and in biological imaging. It has been demonstrated that the pc-WLED devices integrated with red emissive ZnCdSe QDs show improved color rendering index of device. However, cadmium-based QDs have limited future owing to the well-known toxicity. Recently, non-cadmium luminescence materials, i.e. CuInS2-based QDs, are investigated as desirable low toxic alternatives. Particularly, CuInS2-based QDs exhibit very broad emissions spectra with full width at half maximum (FWHM) of 100-120 nm, large Stokes shifts of 200 300 meV and finely-tunable emissions. In order to adjust emission wavelengths and improved quantum yield (QY), CuInS2/ZnS (CIS/ZnS) core/shell structure was introduced. Therefore, CIS/ZnS QDs have been extensively investigated and be used as color converter in solid-state lighting. Synthesis and application of CuInS2/ZnS core/shell QDs are conducted using a hot injection route. CIS/ZnS core/shell QDs with molar ratio of Cu:In equal to 1:4 are prepared. For WLED fabrication, the CIS/ZnS QD is dispersed in toluene first, and then it is blended with transparent acrylic-based UV resin. Subsequently, the commercial green-emitting Lu3Al5O12: Ce3+ (LuAG) phosphors are mixed with QDs-resin mixture. After that, the QDs-phosphors-resin mixtures are put in the oven at 140 °C for 1 h to evaporate the toluene. Subsequently, the homogeneous QDs-phosphors-resin mixture is dropped on the top of a blue LED chip (InGaN). Then, the device is cured by 400 W UV light to form WLED. The emission wavelength of CIS/ZnS QD exhibits yellow region of 552 nm with QY of 76 %, and with relatively broad bandwidth of 86 nm. The structure of CIS/ZnS belongs to chalcopyrite phase and its average particle size is 3.2 nm. The luminous efficacy, color rendering index (CRI), correlated color temperature (CCT), and CIE chromaticity coordinate of WLED is 47 lm/W, 89, 5661 K, and (0.33, 0.29), respectively.

Highly Efficient Light-Emitting Diodes of Colloidal Metal-Halide Perovskite Nanocrystals beyond Quantum Size.

PubMed

Kim, Young-Hoon; Wolf, Christoph; Kim, Young-Tae; Cho, Himchan; Kwon, Woosung; Do, Sungan; Sadhanala, Aditya; Park, Chan Gyung; Rhee, Shi-Woo; Im, Sang Hyuk; Friend, Richard H; Lee, Tae-Woo

2017-07-25

Colloidal metal-halide perovskite quantum dots (QDs) with a dimension less than the exciton Bohr diameter D B (quantum size regime) emerged as promising light emitters due to their spectrally narrow light, facile color tuning, and high photoluminescence quantum efficiency (PLQE). However, their size-sensitive emission wavelength and color purity and low electroluminescence efficiency are still challenging aspects. Here, we demonstrate highly efficient light-emitting diodes (LEDs) based on the colloidal perovskite nanocrystals (NCs) in a dimension > D B (regime beyond quantum size) by using a multifunctional buffer hole injection layer (Buf-HIL). The perovskite NCs with a dimension greater than D B show a size-irrespective high color purity and PLQE by managing the recombination of excitons occurring at surface traps and inside the NCs. The Buf-HIL composed of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and perfluorinated ionomer induces uniform perovskite particle films with complete film coverage and prevents exciton quenching at the PEDOT:PSS/perovskite particle film interface. With these strategies, we achieved a very high PLQE (∼60.5%) in compact perovskite particle films without any complex post-treatments and multilayers and a high current efficiency of 15.5 cd/A in the LEDs of colloidal perovskite NCs, even in a simplified structure, which is the highest efficiency to date in green LEDs that use colloidal organic-inorganic metal-halide perovskite nanoparticles including perovskite QDs and NCs. These results can help to guide development of various light-emitting optoelectronic applications based on perovskite NCs.

Ultrawide Spectral Response of CIGS Solar Cells Integrated with Luminescent Down-Shifting Quantum Dots.

PubMed

Jeong, Ho-Jung; Kim, Ye-Chan; Lee, Soo Kyung; Jeong, Yonkil; Song, Jin-Won; Yun, Ju-Hyung; Jang, Jae-Hyung

2017-08-02

Conventional Cu(In 1-x ,Ga x )Se 2 (CIGS) solar cells exhibit poor spectral response due to parasitic light absorption in the window and buffer layers at the short wavelength range between 300 and 520 nm. In this study, the CdSe/CdZnS core/shell quantum dots (QDs) acting as a luminescent down-shifting (LDS) layer were inserted between the MgF 2 antireflection coating and the window layer of the CIGS solar cell to improve light harvesting in the short wavelength range. The LDS layer absorbs photons in the short wavelength range and re-emits photons in the 609 nm range, which are transmitted through the window and buffer layer and absorbed in the CIGS layer. The average external quantum efficiency in the parasitic light absorption region (300-520 nm) was enhanced by 51%. The resulting short circuit current density of 34.04 mA/cm 2 and power conversion efficiency of 14.29% of the CIGS solar cell with the CdSe/CdZnS QDs were improved by 4.35 and 3.85%, respectively, compared with those of the conventional solar cells without QDs.

Improved QD-BRET conjugates for detection and imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xing Yun; So, Min-kyung; Koh, Ai Leen

2008-08-01

Self-illuminating quantum dots, also known as QD-BRET conjugates, are a new class of quantum dot bioconjugates which do not need external light for excitation. Instead, light emission relies on the bioluminescence resonance energy transfer from the attached Renilla luciferase enzyme, which emits light upon the oxidation of its substrate. QD-BRET combines the advantages of the QDs (such as superior brightness and photostability, tunable emission, multiplexing) as well as the high sensitivity of bioluminescence imaging, thus holding the promise for improved deep tissue in vivo imaging. Although studies have demonstrated the superior sensitivity and deep tissue imaging potential, the stability ofmore » the QD-BRET conjugates in biological environment needs to be improved for long-term imaging studies such as in vivo cell tracking. In this study, we seek to improve the stability of QD-BRET probes through polymeric encapsulation with a polyacrylamide gel. Results show that encapsulation caused some activity loss, but significantly improved both the in vitro serum stability and in vivo stability when subcutaneously injected into the animal. Stable QD-BRET probes should further facilitate their applications for both in vitro testing as well as in vivo cell tracking studies.« less

High-quality quantum-dot-based full-color display technology by pulsed spray method

NASA Astrophysics Data System (ADS)

Chen, Kuo-Ju; Chen, Hsin-Chu; Tsai, Kai-An; Lin, Chien-Chung; Tsai, Hsin-Han; Chien, Shih-Hsuan; Cheng, Bo-Siao; Hsu, Yung-Jung; Shih, Min-Hsiung; Kuo, Hao-Chung

2013-03-01

We fabricated the colloidal quantum-dot light-emitting diodes (QDLEDs) with the HfO2/SiO2-distributed Bragg reflector (DBR) structure using a pulsed spray coating method. Moreover, pixelated RGB arrays, 2-in. wafer-scale white light emission, and an integrated small footprint white light device were demonstrated. The experimental results showed that the intensity of red, blue, and green (RGB) emissions exhibited considerable enhancement because of the high reflectivity in the UV region by the DBR structure, which subsequently increased the use in the UV optical pumping of RGB QDs. In this experiment, a pulsed spray coating method was crucial in providing uniform RGB layers, and the polydimethylsiloxane (PDMS) film was used as the interface layer between each RGB color to avoid crosscontamination and self-assembly of QDs. Furthermore, the chromaticity coordinates of QDLEDs with the DBR structure remained constant under various pumping powers in the large area sample, whereas a larger shift toward high color temperatures was observed in the integrated device. The resulting color gamut of the proposed QDLEDs covered an area 1.2 times larger than that of the NTSC standard, which is favorable for the next generation of high-quality display technology.

Beneficial effects of water in the colloidal synthesis of InP/ZnS core-shell quantum dots for optoelectronic applications.

PubMed

Ramasamy, Parthiban; Kim, Bumjin; Lee, Min-Sang; Lee, Jong-Soo

2016-10-21

We demonstrate that the presence of a small amount of water as an impurity during the hot-injection synthesis can significantly decrease the emission lines full width at half-maximum (FWHM) and improve the quantum yield (QY) of InP/ZnS quantum dots (QDs). By utilizing the water present in the indium precursor and solvent, we obtained InP/ZnS QDs emitting around 530 nm with a FWHM as narrow as 46 nm and a QY up to 45%. Without water, the synthesized QDs have emission around 625 nm with a FWHM of 66 nm and a QY of about 33%. Absorption spectra, XRD and XPS analyses revealed that when water is present, an amorphous phosphate layer is formed over the InP QDs and inhibits the QD growth. This amorphous layer favors the formation of a very thick ZnS shell by decreasing the lattice mismatch between the InP core and the ZnS shell. We further show the possibility to tune the emission wavelengths of InP/ZnS QDs by simply adjusting the amount of water present in the system while keeping all the other reaction parameters (i.e., precursor concentration, reaction temperature and time) constant. As an example of their application in light-emitting diodes (LEDs), the green and red InP/ZnS QDs are combined with a blue LED chip to produce white light.

Uniform Luminous Perovskite Nanofibers with Color-Tunability and Improved Stability Prepared by One-Step Core/Shell Electrospinning.

PubMed

Tsai, Ping-Chun; Chen, Jung-Yao; Ercan, Ender; Chueh, Chu-Chen; Tung, Shih-Huang; Chen, Wen-Chang

2018-04-30

A one-step core/shell electrospinning technique is exploited to fabricate uniform luminous perovskite-based nanofibers, wherein the perovskite and the polymer are respectively employed in the core and the outer shell. Such a coaxial electrospinning technique enables the in situ formation of perovskite nanocrystals, exempting the needs of presynthesis of perovskite quantum dots or post-treatments. It is demonstrated that not only the luminous electrospun nanofibers can possess color-tunability by simply tuning the perovskite composition, but also the grain size of the formed perovskite nanocrystals is largely affected by the perovskite precursor stoichiometry and the polymer solution concentration. Consequently, the optimized perovskite electrospun nanofiber yields a high photoluminescence quantum yield of 30.9%, significantly surpassing the value of its thin-film counterpart. Moreover, owing to the hydrophobic characteristic of shell polymer, the prepared perovskite nanofiber is endowed with a high resistance to air and water. Its photoluminescence intensity remains constant while stored under ambient environment with a relative humidity of 85% over a month and retains intensity higher than 50% of its initial intensity while immersed in water for 48 h. More intriguingly, a white light-emitting perovskite-based nanofiber is successfully fabricated by pairing the orange light-emitting compositional perovskite with a blue light-emitting conjugated polymer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantum interference of electrically generated single photons from a quantum dot.

PubMed

Patel, Raj B; Bennett, Anthony J; Cooper, Ken; Atkinson, Paola; Nicoll, Christine A; Ritchie, David A; Shields, Andrew J

2010-07-09

Quantum interference lies at the foundation of many protocols for scalable quantum computing and communication with linear optics. To observe these effects the light source must emit photons that are indistinguishable. From a technological standpoint, it would be beneficial to have electrical control over the emission. Here we report of an electrically driven single-photon source emitting indistinguishable photons. The device consists of a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode. Indistinguishability of consecutive photons is tested in a two-photon interference experiment under two modes of operation, continuous and pulsed current injection. We also present a complete theory based on the interference of photons with a Lorentzian spectrum which we compare to both our continuous wave and pulsed experiments. In the former case, a visibility was measured limited only by the timing resolution of our detection system. In the case of pulsed injection, we employ a two-pulse voltage sequence which suppresses multi-photon emission and allows us to carry out temporal filtering of photons which have undergone dephasing. The characteristic Hong-Ou-Mandel 'dip' is measured, resulting in a visibility of 64 +/- 4%.

Cavity-assisted emission of polarization-entangled photons from biexcitons in quantum dots with fine-structure splitting.

PubMed

Schumacher, Stefan; Förstner, Jens; Zrenner, Artur; Florian, Matthias; Gies, Christopher; Gartner, Paul; Jahnke, Frank

2012-02-27

We study the quantum properties and statistics of photons emitted by a quantum-dot biexciton inside a cavity. In the biexciton-exciton cascade, fine-structure splitting between exciton levels degrades polarization-entanglement for the emitted pair of photons. However, here we show that the polarization-entanglement can be preserved in such a system through simultaneous emission of two degenerate photons into cavity modes tuned to half the biexciton energy. Based on detailed theoretical calculations for realistic quantum-dot and cavity parameters, we quantify the degree of achievable entanglement.

Superabsorption of light via quantum engineering

PubMed Central

Higgins, K. D. B.; Benjamin, S. C.; Stace, T. M.; Milburn, G. J.; Lovett, B. W.; Gauger, E. M.

2014-01-01

Almost 60 years ago Dicke introduced the term superradiance to describe a signature quantum effect: N atoms can collectively emit light at a rate proportional to N2. Structures that superradiate must also have enhanced absorption, but the former always dominates in natural systems. Here we show that this restriction can be overcome by combining several well-established quantum control techniques. Our analytical and numerical calculations show that superabsorption can then be achieved and sustained in certain simple nanostructures, by trapping the system in a highly excited state through transition rate engineering. This opens the prospect of a new class of quantum nanotechnology with potential applications including photon detection and light-based power transmission. An array of quantum dots or a molecular ring structure could provide a suitable platform for an experimental demonstration. PMID:25146588

Study of continuous-wave domain fluorescence diffuse optical tomography for quality control on agricultural produce

NASA Astrophysics Data System (ADS)

Nadhira, Vebi; Kurniadi, Deddy; Juliastuti, E.; Sutiswan, Adeline

2014-03-01

The importance of monitoring the quality of vegetables and fruits is prosperity by giving a competitive advantage for producer and providing a more healthy food for consumer. Diffuse Optical Tomography (DOT) is offering the possibility to detect the internal defects of the agricultural produce quality. Fluorescence diffuse optical tomography (FDOT) is the development of DOT, offering the possibilities to improve spatial resolution and to contrast image. The purpose of this research is to compare FDOT and DOT in forward analysis with continuous wave approach. The scattering and absorbing parameters of potatoes are used to represent the real condition. The object was illuminated by the NIR source from some positions on the boundary of object. A set of NIR detector are placed on the peripheral position of the object to measure the intensity of propagated or emitted light. In the simulation, we varied a condition of object then we analyzed the sensitivity of forward problem. The result of this study shows that FDOT has a better sensitivity than DOT and a better potential to monitor internal defects of agricultural produce because of the contrast value between optical and fluorescence properties of agricultural produce normal tissue and defects.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nadhira, Vebi, E-mail: vebi@tf.itb.ac.id; Kurniadi, Deddy, E-mail: vebi@tf.itb.ac.id; Juliastuti, E., E-mail: vebi@tf.itb.ac.id

The importance of monitoring the quality of vegetables and fruits is prosperity by giving a competitive advantage for producer and providing a more healthy food for consumer. Diffuse Optical Tomography (DOT) is offering the possibility to detect the internal defects of the agricultural produce quality. Fluorescence diffuse optical tomography (FDOT) is the development of DOT, offering the possibilities to improve spatial resolution and to contrast image. The purpose of this research is to compare FDOT and DOT in forward analysis with continuous wave approach. The scattering and absorbing parameters of potatoes are used to represent the real condition. The objectmore » was illuminated by the NIR source from some positions on the boundary of object. A set of NIR detector are placed on the peripheral position of the object to measure the intensity of propagated or emitted light. In the simulation, we varied a condition of object then we analyzed the sensitivity of forward problem. The result of this study shows that FDOT has a better sensitivity than DOT and a better potential to monitor internal defects of agricultural produce because of the contrast value between optical and fluorescence properties of agricultural produce normal tissue and defects.« less

A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band

NASA Astrophysics Data System (ADS)

Zeuner, Katharina D.; Paul, Matthias; Lettner, Thomas; Reuterskiöld Hedlund, Carl; Schweickert, Lucas; Steinhauer, Stephan; Yang, Lily; Zichi, Julien; Hammar, Mattias; Jöns, Klaus D.; Zwiller, Val

2018-04-01

The implementation of fiber-based long-range quantum communication requires tunable sources of single photons at the telecom C-band. Stable and easy-to-implement wavelength-tunability of individual sources is crucial to (i) bring remote sources into resonance, (ii) define a wavelength standard, and (iii) ensure scalability to operate a quantum repeater. So far, the most promising sources for true, telecom single photons are semiconductor quantum dots, due to their ability to deterministically and reliably emit single and entangled photons. However, the required wavelength-tunability is hard to attain. Here, we show a stable wavelength-tunable quantum light source by integrating strain-released InAs quantum dots on piezoelectric substrates. We present triggered single-photon emission at 1.55 μm with a multi-photon emission probability as low as 0.097, as well as photon pair emission from the radiative biexciton-exciton cascade. We achieve a tuning range of 0.25 nm which will allow us to spectrally overlap remote quantum dots or tuning distant quantum dots into resonance with quantum memories. This opens up realistic avenues for the implementation of photonic quantum information processing applications at telecom wavelengths.

Atomic clouds as spectrally selective and tunable delay lines for single photons from quantum dots

NASA Astrophysics Data System (ADS)

Wildmann, Johannes S.; Trotta, Rinaldo; Martín-Sánchez, Javier; Zallo, Eugenio; O'Steen, Mark; Schmidt, Oliver G.; Rastelli, Armando

2015-12-01

We demonstrate a compact, spectrally selective, and tunable delay line for single photons emitted by quantum dots. This is achieved by fine-tuning the wavelength of the optical transitions of such "artificial atoms" into a spectral window in which a cloud of natural atoms behaves as a slow-light medium. By employing the ground-state fine-structure-split exciton confined in an InGaAs/GaAs quantum dot as a source of single photons at different frequencies and the hyperfine-structure-split D1 transition of Cs-vapors as a tunable delay medium, we achieve a differential delay of up 2.4 ns on a 7.5-cm-long path for photons that are only 60 μ eV (14.5 GHz) apart. To quantitatively explain the experimental data, we develop a theoretical model that accounts for both the inhomogeneous broadening of the quantum-dot emission lines and the Doppler broadening of the atomic lines. The concept we proposed here may be used to implement time-reordering operations aimed at erasing the "which-path" information that deteriorates entangled-photon emission from excitons with finite fine-structure splitting.

Influence of ablation wavelength and time on optical properties of laser ablated carbon dots

NASA Astrophysics Data System (ADS)

Isnaeni, Hanna, M. Yusrul; Pambudi, A. A.; Murdaka, F. H.

2017-01-01

Carbon dots, which are unique and applicable materials, have been produced using many techniques. In this work, we have fabricated carbon dots made of coconut fiber using laser ablation technique. The purpose of this work is to evaluate two ablation parameters, which are ablation wavelength and ablation time. We used pulsed laser from Nd:YAG laser with emit wavelength at 355 nm, 532 nm and 1064 nm. We varied ablation time one hour and two hours. Photoluminescence and time-resolved photoluminescence setup were used to study the optical properties of fabricated carbon dots. In general, fabricated carbon dots emit bluish green color emission upon excitation by blue laser. We found that carbon dots fabricated using 1064 nm laser produced the highest carbon dots emission among other samples. The peak wavelength of carbon dots emission is between 495 nm until 505 nm, which gives bluish green color emission. Two hours fabricated carbon dots gave four times higher emission than one hour fabricated carbon dot. More emission intensity of carbon dots means more carbon dots nanoparticles were fabricated during laser ablation process. In addition, we also measured electron dynamics of carbon dots using time-resolved photoluminescence. We found that sample with higher emission has longer electron decay time. Our finding gives optimum condition of carbon dots fabrication from coconut fiber using laser ablation technique. Moreover, fabricated carbon dots are non-toxic nanoparticles that can be applied for health, bio-tagging and medical applications.

Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide.

PubMed

Haffouz, Sofiane; Zeuner, Katharina D; Dalacu, Dan; Poole, Philip J; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D; Zwiller, Valery; Williams, Robin L

2018-05-09

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

NASA Astrophysics Data System (ADS)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

Highly Fluorescent Noble Metal Quantum Dots

PubMed Central

Zheng, Jie; Nicovich, Philip R.; Dickson, Robert M.

2009-01-01

Highly fluorescent, water-soluble, few-atom noble metal quantum dots have been created that behave as multi-electron artificial atoms with discrete, size-tunable electronic transitions throughout the visible and near IR. These “molecular metals” exhibit highly polarizable transitions and scale in size according to the simple relation, Efermi/N1/3, predicted by the free electron model of metallic behavior. This simple scaling indicates that fluorescence arises from intraband transitions of free electrons and that these conduction electron transitions are the low number limit of the plasmon – the collective dipole oscillations occurring when a continuous density of states is reached. Providing the “missing link” between atomic and nanoparticle behavior in noble metals, these emissive, water-soluble Au nanoclusters open new opportunities for biological labels, energy transfer pairs, and light emitting sources in nanoscale optoelectronics. PMID:17105412

Quantum technology past, present, future: quantum energetics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Choi, Sang H.

2017-04-01

Since the development of quantum physics in the early part of the 1900s, this field of study has made remarkable contributions to our civilization. Some of these advances include lasers, light-emitting diodes (LED), sensors, spectroscopy, quantum dots, quantum gravity and quantum entanglements. In 1998, the NASA Langley Research Center established a quantum technology committee to monitor the progress in this area and initiated research to determine the potential of quantum technology for future NASA missions. The areas of interest in quantum technology at NASA included fundamental quantum-optics materials associated with quantum dots and quantum wells, device-oriented photonic crystals, smart optics, quantum conductors, quantum information and computing, teleportation theorem, and quantum energetics. A brief review of the work performed, the progress made in advancing these technologies, and the potential NASA applications of quantum technology will be presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baidus, N. V.; Kukushkin, V. A., E-mail: vakuk@appl.sci-nnov.ru; Zvonkov, B. N.

As a result of theoretical and experimental analyses, the parameters of heterostructures with InAs quantum dots in a GaAs matrix are determined, which provide the development of high-speed and efficient plasmon-polariton near-infrared light-emitting Schottky diodes based on such structures. The quantum dots should be arranged on a heavily doped (to a dopant concentration of 10{sup 19} cm{sup –3}) GaAs buffer layer and be separated from the metal by a thin (10–30 nm thick) undoped GaAs cap layer. The interface between the metal (e.g., gold) and GaAs provides the efficient scattering of surface plasmon-polaritons to ordinary photons if it contains inhomogeneitiesmore » shaped as metal-filled cavities with a characteristic size of ~30 nm and a surface concentration above 10{sup 10} cm{sup –2}.« less

Optical Spectra of the Jaynes-Cummings Ladder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laussy, Fabrice P.; Valle, Elena del

2009-06-29

We explore how the Jaynes-Cummings ladder transpires in the emitted spectra of a two-level system in strong coupling with a single mode of light. We focus on the case of very strong coupling, that would be achieved with systems of exceedingly good quality (very long lifetimes for both the emitter and the cavity). We focus on the incoherent regime of excitation, that is realized with semiconductors quantum dots in microcavities, and discuss how reasonable is the understanding of the systems in terms of transitions between dressed states of the Jaynes-Cummings Hamiltonian.

Semiconductor Quantum Dots for Bioimaging and Biodiagnostic Applications

NASA Astrophysics Data System (ADS)

Kairdolf, Brad A.; Smith, Andrew M.; Stokes, Todd H.; Wang, May D.; Young, Andrew N.; Nie, Shuming

2013-06-01

Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.

Semiconductor quantum dots for bioimaging and biodiagnostic applications.

PubMed

Kairdolf, Brad A; Smith, Andrew M; Stokes, Todd H; Wang, May D; Young, Andrew N; Nie, Shuming

2013-01-01

Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.

Semiconductor Quantum Dots for Bioimaging and Biodiagnostic Applications

PubMed Central

Kairdolf, Brad A.; Smith, Andrew M.; Stokes, Todd H.; Wang, May D.; Young, Andrew N.; Nie, Shuming

2013-01-01

Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future. PMID:23527547

Graphitic Nitrogen Triggers Red Fluorescence in Carbon Dots.

PubMed

Holá, Kateřina; Sudolská, Mária; Kalytchuk, Sergii; Nachtigallová, Dana; Rogach, Andrey L; Otyepka, Michal; Zbořil, Radek

2017-12-26

Carbon dots (CDs) are a stable and highly biocompatible fluorescent material offering great application potential in cell labeling, optical imaging, LED diodes, and optoelectronic technologies. Because their emission wavelengths provide the best tissue penetration, red-emitting CDs are of particular interest for applications in biomedical technologies. Current synthetic strategies enabling red-shifted emission include increasing the CD particle size (sp 2 domain) by a proper synthetic strategy and tuning the surface chemistry of CDs with suitable functional groups (e.g., carboxyl). Here we present an elegant route for preparing full-color CDs with well-controllable fluorescence at blue, green, yellow, or red wavelengths. The two-step procedure involves the synthesis of a full-color-emitting mixture of CDs from citric acid and urea in formamide followed by separation of the individual fluorescent fractions by column chromatography based on differences in CD charge. Red-emitting CDs, which had the most negative charge, were separated as the last fraction. The trend in the separation, surface charge, and red-shift of photoluminescence was caused by increasing amount of graphitic nitrogen in the CD structure, as was clearly proved by XPS, FT-IR, Raman spectroscopy, and DFT calculations. Importantly, graphitic nitrogen generates midgap states within the HOMO-LUMO gap of the undoped systems, resulting in significantly red-shifted light absorption that in turn gives rise to fluorescence at the low-energy end of the visible spectrum. The presented findings identify graphitic nitrogen as another crucial factor that can red-shift the CD photoluminescence.

A bright triggered twin-photon source in the solid state

PubMed Central

Heindel, T.; Thoma, A.; von Helversen, M.; Schmidt, M.; Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J. -H.; Strittmatter, A.; Beyer, J.; Rodt, S.; Carmele, A.; Knorr, A.; Reitzenstein, S.

2017-01-01

A non-classical light source emitting pairs of identical photons represents a versatile resource of interdisciplinary importance with applications in quantum optics and quantum biology. To date, photon twins have mostly been generated using parametric downconversion sources, relying on Poissonian number distributions, or atoms, exhibiting low emission rates. Here we propose and experimentally demonstrate the efficient, triggered generation of photon twins using the energy-degenerate biexciton–exciton radiative cascade of a single semiconductor quantum dot. Deterministically integrated within a microlens, this nanostructure emits highly correlated photon pairs, degenerate in energy and polarization, at a rate of up to (234±4) kHz. Furthermore, we verify a significant degree of photon indistinguishability and directly observe twin-photon emission by employing photon-number-resolving detectors, which enables the reconstruction of the emitted photon number distribution. Our work represents an important step towards the realization of efficient sources of twin-photon states on a fully scalable technology platform. PMID:28367950

Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

DOE PAGES

Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; ...

2015-11-27

Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO 2. We show that the mask opening diameter leads to as much as 4 times increasemore » in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.« less

Quantum dots for GaAs-based surface emitting lasers at 1300 nm

NASA Astrophysics Data System (ADS)

Grundmann, M.; Ledentsov, N. N.; Hopfer, F.; Heinrichsdorff, F.; Guffarth, F.; Bimberg, D.; Ustinov, V. M.; Zhukov, A. E.; Kovsh, A. R.; Maximov, M. V.; Musikhin, Yu. G.; Alferov, Zh. I.; Lott, J. A.; Zhakharov, N. D.; Werner, P.

InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation (=80 meV) between excited states is maintained. The introduction of such QD's into a vertical cavity leads to strong narrowing of the emission spectrum. Lasing from a 1300 nm InGaAs quantum dot VCSEL is reported.

Unravelling radiative energy transfer in solid-state lighting

NASA Astrophysics Data System (ADS)

Melikov, Rustamzhon; Press, Daniel Aaron; Ganesh Kumar, Baskaran; Sadeghi, Sadra; Nizamoglu, Sedat

2018-01-01

Today, a wide variety of organic and inorganic luminescent materials (e.g., phosphors, quantum dots, etc.) are being used for lighting and new materials (e.g., graphene, perovskite, etc.) are currently under investigation. However, the understanding of radiative energy transfer is limited, even though it is critical to understand and improve the performance levels of solid-state lighting devices. In this study, we derived a matrix approach that includes absorption, reabsorption, inter-absorption and their iterative and combinatorial interactions for one and multiple types of fluorophores, which is simplified to an analytical matrix. This mathematical approach gives results that agree well with the measured spectral and efficiency characteristics of color-conversion light-emitting diodes. Moreover, it also provides a deep physical insight by uncovering the entire radiative interactions and their contribution to the output optical spectrum. The model is universal and applicable for all kinds of fluorophores.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Peng; State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012; Bai, Xue, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn

High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow fullmore » width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.« less

Active galactic nuclei. IV - Supplying black hole clusters by tidal disruption and by tidal capture of stars

NASA Technical Reports Server (NTRS)

Stoeger, W. R.; Pacholczyk, A. G.; Stepinski, T. F.

1992-01-01

The extent to which individual holes in a cluster of black holes with a mass spectrum can liberate and accrete the resulting material by tidally disrupting stars they encounter, or by capturing stars as binary companions is studied. It is found that the smaller black holes in 'the halo' of such clusters can adequately supply themselves to the level M-dot sub h or greater than 0.0001(M-dot sub h) sub crit, and up to 0.05(M-dot sub h)sub crit for the smallest holes, by tidal disruption, as long as the cluster is embedded in a distribution of stars of relatively high density (not less than 0.1M sub cl/cu pc), and as long as the entire cluster of stars is not too compact (not less than 0.5 pc). Consideration is given to modifications this 'internal' mode of supply introduces in the spectrum emitted by such black hole clusters, and to the current status of their viability as models for AGN and QSOs in light of dynamical studies by Quinlan and Shapiro (1987, 1989).

Operating single quantum emitters with a compact Stirling cryocooler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlehahn, A.; Krüger, L.; Gschrey, M.

2015-01-15

The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, wemore » perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g{sup (2)}(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g{sup (2)}(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.« less

Bioengineered II-VI semiconductor quantum dot-carboxymethylcellulose nanoconjugates as multifunctional fluorescent nanoprobes for bioimaging live cells

NASA Astrophysics Data System (ADS)

Mansur, Alexandra A. P.; Mansur, Herman S.; Mansur, Rafael L.; de Carvalho, Fernanda G.; Carvalho, Sandhra M.

2018-01-01

Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M = Cd, Pb, Zn, X = S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0 nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine.

Operating single quantum emitters with a compact Stirling cryocooler.

PubMed

Schlehahn, A; Krüger, L; Gschrey, M; Schulze, J-H; Rodt, S; Strittmatter, A; Heindel, T; Reitzenstein, S

2015-01-01

The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, we perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g((2))(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g((2))(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

NASA Astrophysics Data System (ADS)

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-01

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces.

PubMed

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-02

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Tuning the emission of aqueous Cu:ZnSe quantum dots to yellow light window

NASA Astrophysics Data System (ADS)

Wang, Chunlei; Hu, Zhiyang; Xu, Shuhong; Wang, Yanbin; Zhao, Zengxia; Wang, Zhuyuan; Cui, Yiping

2015-07-01

Synthesis of internally doped Cu:ZnSe QDs in an aqueous solution still suffers from narrow tunable emissions from the blue to green light window. In this work, we extended the emission window of aqueous Cu:ZnSe QDs to the yellow light window. Our results show that high solution pH, multiple injections of Zn precursors, and nucleation doping strategy are three key factors for preparing yellow emitted Cu:ZnSe QDs. All these factors can depress the reactivity of CuSe nuclei and Zn monomers, promoting ZnSe growth outside CuSe nuclei rather than form ZnSe nuclei separately. With increased ZnSe QD size, the conduction band and nearby trap state energy levels shift to higher energy sites, causing Cu:ZnSe QDs to have a much longer emission.

All Solution-processed Stable White Quantum Dot Light-emitting Diodes with Hybrid ZnO@TiO2 as Blue Emitters

PubMed Central

Chen, Jing; Zhao, Dewei; Li, Chi; Xu, Feng; Lei, Wei; Sun, Litao; Nathan, Arokia; Sun, Xiao Wei

2014-01-01

White quantum dot light-emitting diodes (QD-LEDs) have been a promising candidate for high-efficiency and color-saturated displays. However, it is challenging to integrate various QD emitters into one device and also to obtain efficient blue QDs. Here, we report a simply solution-processed white QD-LED using a hybrid ZnO@TiO2 as electron injection layer and ZnCdSeS QD emitters. The white emission is obtained by integrating the yellow emission from QD emitters and the blue emission generated from hybrid ZnO@TiO2 layer. We show that the performance of white QD-LEDs can be adjusted by controlling the driving force for hole transport and electroluminescence recombination region via varying the thickness of hole transport layer. The device is demonstrated with a maximum luminance of 730 cd/m2 and power efficiency of 1.7 lm/W, exhibiting the Commission Internationale de l'Enclairage (CIE) coordinates of (0.33, 0.33). The unencapsulated white QD-LED has a long lifetime of 96 h at its initial luminance of 730 cd/m2, primarily due to the fact that the device with hybrid ZnO@TiO2 has low leakage current and is insensitive to the oxygen and the moisture. These results indicate that hybrid ZnO@TiO2 provides an alternate and effective approach to achieve high-performance white QD-LEDs and also other optoelectronic devices. PMID:24522341

Absorption and Emission of Light in Optoelectronic Nanomaterials: The Role of the Local Optical Environment.

PubMed

Jiménez-Solano, Alberto; Galisteo-López, Juan F; Míguez, Hernán

2018-04-19

Tailoring the interaction of electromagnetic radiation with matter is central to the development of optoelectronic devices. This becomes particularly relevant for a new generation of devices offering the possibility of solution processing with competitive efficiencies as well as new functionalities. These devices, containing novel materials such as inorganic colloidal quantum dots or hybrid organic-inorganic lead halide perovskites, commonly demand thin (tens of nanometers) active layers in order to perform optimally and thus maximizing the way electromagnetic radiation interacts with these layers is essential. In this Perspective, we discuss the relevance of tailoring the optical environment of the active layer in an optoelectronic device and illustrate it with two real-world systems comprising photovoltaic cells and light emitting devices.

Quantum-dot spin-photon entanglement via frequency downconversion to telecom wavelength.

PubMed

De Greve, Kristiaan; Yu, Leo; McMahon, Peter L; Pelc, Jason S; Natarajan, Chandra M; Kim, Na Young; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Fejer, M M; Yamamoto, Yoshihisa

2012-11-15

Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III-V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III-V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.

Gram-scale synthesis of single-crystalline graphene quantum dots with superior optical properties.

PubMed

Wang, Liang; Wang, Yanli; Xu, Tao; Liao, Haobo; Yao, Chenjie; Liu, Yuan; Li, Zhen; Chen, Zhiwen; Pan, Dengyu; Sun, Litao; Wu, Minghong

2014-10-28

Graphene quantum dots (GQDs) have various alluring properties and potential applications, but their large-scale applications are limited by current synthetic methods that commonly produce GQDs in small amounts. Moreover, GQDs usually exhibit polycrystalline or highly defective structures and thus poor optical properties. Here we report the gram-scale synthesis of single-crystalline GQDs by a facile molecular fusion route under mild and green hydrothermal conditions. The synthesis involves the nitration of pyrene followed by hydrothermal treatment in alkaline aqueous solutions, where alkaline species play a crucial role in tuning their size, functionalization and optical properties. The single-crystalline GQDs are bestowed with excellent optical properties such as bright excitonic fluorescence, strong excitonic absorption bands extending to the visible region, large molar extinction coefficients and long-term photostability. These high-quality GQDs can find a large array of novel applications in bioimaging, biosensing, light emitting diodes, solar cells, hydrogen production, fuel cells and supercapacitors.

Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots

PubMed Central

2012-01-01

Deterministic sources of polarization entangled photon pairs on demand are considered as important building blocks for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not have the required values of the FSS, making the availability of post-growth tuning techniques highly desired. This article reviews the effect of different post-growth treatments and external fields on the FSS such as thermal annealing, magnetic fields, the optical Stark effect, electric fields, and anisotropic stress. As a consequence of the tuning of the FSS, for some tuning techniques a rotation of the polarization of the emitted light is observed. The joint modification of polarization orientation and FSS can be described by an anticrossing of the bright excitonic states. PMID:22726724

Novel magnetic graphene quantum dot as dual modality fluorescence/MMOCT contrast agent for tracking epithelial cells

NASA Astrophysics Data System (ADS)

Li, Wei; Matcher, Stephen J.

2017-02-01

A novel nanoparticle, magnetic graphene quantum dot (MGQD), was synthesized by hydrothermally cutting graphene oxide-iron oxide sheet for contrast agent in magnetomotive optical coherence tomography (MMOCT) and confocal fluorescence microscopy (CFM). The MGQD has superparamagnetism, which allows the MGQD to be tracked and imaged using MMOCT. The MMOCT can display paramagnetic nanoparticle in vivo and provide an anatomical information with micron scale resolution and long imaging depth in clinic application. Moreover, the MGQD has excitation-depend fluorescence and emits visible fluorescence under the excitation of 360nm light, which allows the MGQD to be used as tracer in CFM. CFM can offer intracellular details due to higher resolution, while CFM is unsuitable for imaging anatomical structure because of the limited view of field. The use of MGQD for cell or tissue tracking realizes the combination of MMOCT and CFM, and gives a more comprehensive diagnosis.

Subdiffusive exciton transport in quantum dot solids.

PubMed

Akselrod, Gleb M; Prins, Ferry; Poulikakos, Lisa V; Lee, Elizabeth M Y; Weidman, Mark C; Mork, A Jolene; Willard, Adam P; Bulović, Vladimir; Tisdale, William A

2014-06-11

Colloidal quantum dots (QDs) are promising materials for use in solar cells, light-emitting diodes, lasers, and photodetectors, but the mechanism and length of exciton transport in QD materials is not well understood. We use time-resolved optical microscopy to spatially visualize exciton transport in CdSe/ZnCdS core/shell QD assemblies. We find that the exciton diffusion length, which exceeds 30 nm in some cases, can be tuned by adjusting the inorganic shell thickness and organic ligand length, offering a powerful strategy for controlling exciton movement. Moreover, we show experimentally and through kinetic Monte Carlo simulations that exciton diffusion in QD solids does not occur by a random-walk process; instead, energetic disorder within the inhomogeneously broadened ensemble causes the exciton diffusivity to decrease over time. These findings reveal new insights into exciton dynamics in disordered systems and demonstrate the flexibility of QD materials for photonic and optoelectronic applications.

Quantum Dot-Induced Phase Stabilization of ..alpha..-CsPbI3 Perovskite for High-Efficiency Photovoltaics

DOE PAGES

Swarnkar, Abhishek; Marshall, Ashley R.; Sanehira, Erin M.; ...

2016-10-07

Here, we show nanoscale phase stabilization of CsPbI 3 quantum dots (QDs) to low temperatures that can be used as the active component of efficient optoelectronic devices. CsPbI 3 is an all-inorganic analog to the hybrid organic cation halide perovskites, but the cubic phase of bulk CsPbI3 (..alpha..-CsPbI 3) -- the variant with desirable band gap -- is only stable at high temperatures. We also describe the formation of ..alpha..-CsPbI 3 QD films that are phase-stable for months in ambient air. The films exhibit long-range electronic transport and were used to fabricate colloidal perovskite QD photovoltaic cells with an open-circuitmore » voltage of 1.23 volts and efficiency of 10.77%. Furthermore, these devices function as light-emitting diodes with low turn-on voltage and tunable emission.« less

Pure ultraviolet emission from ZnO quantum dots-based/GaN heterojunction diodes by MgO interlayer

NASA Astrophysics Data System (ADS)

Chen, Cheng; Liang, Renli; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhao, Chong; Zhang, Wei; Dai, Jiangnan; Chen, Changqing

2017-07-01

We demonstrate the fabrication and characterization of ZnO/GaN-based heterojunction light-emitting diodes (LEDs) by using air-stable and solution-processable ZnO quantum dots (QDs) with a thin MgO interlayer acting as an electron blocking layer (EBL). The ZnO QDs/MgO/ p-GaN heterojunction can only display electroluminescence (EL) characteristic in reverse bias regime. Under sufficient reverse bias, a fairly pure ultraviolet EL emission located at 370 nm deriving from near band edge of ZnO with a full width at half maximum (FWHM) of 8.3 nm had been obtained, while the deep-level emission had been almost totally suppressed. The EL origination and corresponding carrier transport mechanisms were investigated qualitatively in terms of photoluminescence (PL) results and energy band diagram.[Figure not available: see fulltext.

Large Scale Synthesis and Light Emitting Fibers of Tailor-Made Graphene Quantum Dots

PubMed Central

Park, Hun; Hyun Noh, Sung; Hye Lee, Ji; Jun Lee, Won; Yun Jaung, Jae; Geol Lee, Seung; Hee Han, Tae

2015-01-01

Graphene oxide (GO), which is an oxidized form of graphene, has a mixed structure consisting of graphitic crystallites of sp2 hybridized carbon and amorphous regions. In this work, we present a straightforward route for preparing graphene-based quantum dots (GQDs) by extraction of the crystallites from the amorphous matrix of the GO sheets. GQDs with controlled functionality are readily prepared by varying the reaction temperature, which results in precise tunability of their optical properties. Here, it was concluded that the tunable optical properties of GQDs are a result of the different fraction of chemical functionalities present. The synthesis approach presented in this paper provides an efficient strategy for achieving large-scale production and long-time optical stability of the GQDs, and the hybrid assembly of GQD and polymer has potential applications as photoluminescent fibers or films. PMID:26383257

Surface Stabilized InP/GaP/ZnS Quantum Dots with Mg Ions for WLED Application.

PubMed

Park, Joong Pill; Kim, Sang-Wook

2016-05-01

One of the most highlighted cadmium-free quantum dots (QDs), InP-based QDs, have improved their optical properties. However, InP-based QDs have some practical drawbacks, for example, stability, compared with CdSe-based QDs. Poor stability of InP-based QDs yields critical problems, such as agglomeration and photoluminescence quenching in light emitting diode (LED). It has to be solved for applications and most research has focused on thick outer shells as an effective solution. We introduced magnesium cations for improving stability of InP-based QDs. We applied very small amounts of Mg cations as surface stabilizers, as a result, stability of QDs is clearly improved. Then, QD based LED chips also yield improved values including RA of 84.4, CCT of 3799 K, and luminous efficiency of 129.57 Im/W, which are highly improved data compared with our previous results.

Strategy for synthesizing quantum dot-layered double hydroxide nanocomposites and their enhanced photoluminescence and photostability.

PubMed

Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee

2013-01-08

Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.

Enhanced photoluminescence property and broad color emission of ZnGa2O4 phosphor due to the synergistic role of Eu3+ and carbon dots

NASA Astrophysics Data System (ADS)

Huo, Qiuyue; Tu, Weixia; Guo, Lin

2017-10-01

ZnGa2O4 phosphors co-composited with nanoscale carbon dots (CDs) and Eu3+ were presented for the tunable color emission. Novel single phase CDs or/and Eu3+ composited ZnGa2O4 phosphors were synthesized by microwave hydrothermal method and their optical properties were investigated. The ZnGa2O4 phosphors composited with CDs exhibited an intense broad blue light emission at 421 nm and a more enhanced photoluminescence intensity than those without CDs. The Eu3+ composited ZnGa2O4 phosphors gave an ideal red color emission. The CDs/Eu3+ co-composited ZnGa2O4 phosphors exhibited a wide emission band peak at 450 nm and narrow emission peak at 618 nm. Furthermore, the tunable color emissions of CDs/Eu3+ co-composited ZnGa2O4 phosphors from blue to the white light region, and then to red were obtained with the increasing Eu3+ concentration, which can be a promising single phased phosphor candidate in light emitting diodes. Broadly tunable emission single phased phosphor is tuned firstly through the synergistic role of the non-metal element and the rare earth metal ions.

Low-noise quantum frequency down-conversion of indistinguishable photons (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kambs, Benjamin; Kettler, Jan; Bock, Matthias; Becker, Jonas; Arend, Carsten; Jetter, Michael; Michler, Peter; Becher, Christoph

2016-04-01

Single-photon sources based on quantum dots have been shown to exhibit almost ideal properties such as high brightness and purity in terms of clear anti-bunching as well as high two-photon interference visibilities of the emitted photons, making them promising candidates for different quantum information applications such as quantum computing, quantum communication and quantum teleportation. However, as most single-photon sources also quantum dots typically emit light at wavelengths of electronic transitions within the visible or the near infrared range. In order to establish quantum networks with remote building blocks, low-loss single photons at telecom wavelengths are preferable, though. Despite recent progress on emitters of telecom-photons, the most efficient single-photon sources still work at shorter wavelengths. On that matter, quantum frequency down-conversion, being a nonlinear optical process, has been used in recent years to alter the wavelength of single photons to the telecom wavelength range while conserving their nonclassical properties. Characteristics such as lifetime, first-order coherence, anti-bunching and entanglement have been shown to be conserved or even improved due to background suppression during the conversion process, while the conservation of indistinguishability was yet to be shown. Here we present our experimental results on quantum frequency down-conversion of single photons emitted by an InAs/GaAs quantum dot at 903.6 nm following a pulsed excitation of a p-shell exciton at 884 nm. The emitted fluorescence photons are mixed with a strong pump-field at 2155 nm inside a periodically poled lithium niobate ridge waveguide and converted to 1557 nm. Common issues of a large background due to Raman-scattered pump-light photons spectrally overlapping with the converted single photons could largely be avoided, as the pump-wavelength was chosen to be fairly longer than the target wavelength. Additional narrowband spectral filtering at the telecom regime as a result of the small conversion bandwidth and using a high-performance fiber-Bragg-grating solely left the detector dark counts as the only noise source in our setup. Therefore, we could achieve conversion efficiencies of more than 20 %. In order to test the indistinguishability, sequentially emitted photons were fed into a Mach-Zehnder interferometer and spatially as well as temporally overlapped at the output beam splitter. Cross-correlation measurements between both output-ports of the beam splitter exhibit two-photon interference contrasts of more than 40 % prior to and after the down-conversion step. Accordingly, we demonstrate that the process of quantum frequency conversion preserves photon indistinguishability and can be used to establish a versatile source of indistinguishable single photons at the telecom C-Band. Furthermore our scheme allows for converting photons in a wavelength band from 900 nm to 910 nm to the same telecom target wavelength. This enables us to test indistinguishability of frequency-converted photons, originally stemming from different sources with dinstinguishable wavelengths.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xin, Yunzi; Nishio, Kazuyuki; Saitow, Ken-ichi, E-mail: saitow@hiroshima-u.ac.jp

A silicon (Si) quantum dot (QD)-based hybrid inorganic/organic light-emitting diode (LED) was fabricated via solution processing. This device exhibited white-blue electroluminescence at a low applied voltage of 6 V, with 78% of the effective emission obtained from the Si QDs. This hybrid LED produced current and optical power densities 280 and 350 times greater than those previously reported for such device. The superior performance of this hybrid device was obtained by both the prepared Si QDs and the optimized layer structure and thereby improving carrier migration through the hybrid LED and carrier recombination in the homogeneous Si QD layer.

Ultrahigh resolution multicolor colocalization of single fluorescent probes

DOEpatents

Weiss, Shimon; Michalet, Xavier; Lacoste, Thilo D.

2005-01-18

A novel optical ruler based on ultrahigh-resolution colocalization of single fluorescent probes is described. Two unique families of fluorophores are used, namely energy-transfer fluorescent beads and semiconductor nanocrystal (NC) quantum dots, that can be excited by a single laser wavelength but emit at different wavelengths. A novel multicolor sample-scanning confocal microscope was constructed which allows one to image each fluorescent light emitter, free of chromatic aberrations, by scanning the sample with nanometer scale steps using a piezo-scanner. The resulting spots are accurately localized by fitting them to the known shape of the excitation point-spread-function of the microscope.

Volume three-dimensional flow measurements using wavelength multiplexing.

PubMed

Moore, Andrew J; Smith, Jason; Lawson, Nicholas J

2005-10-01

Optically distinguishable seeding particles that emit light in a narrow bandwidth, and a combination of bandwidths, were prepared by encapsulating quantum dots. The three-dimensional components of the particles' displacement were measured within a volume of fluid with particle tracking velocimetry (PTV). Particles are multiplexed to different hue bands in the camera images, enabling an increased seeding density and (or) fewer cameras to be used, thereby increasing the measurement spatial resolution and (or) reducing optical access requirements. The technique is also applicable to two-phase flow measurements with PTV or particle image velocimetry, where each phase is uniquely seeded.

Visible-to-telecom quantum frequency conversion of light from a single quantum emitter.

PubMed

Zaske, Sebastian; Lenhard, Andreas; Keßler, Christian A; Kettler, Jan; Hepp, Christian; Arend, Carsten; Albrecht, Roland; Schulz, Wolfgang-Michael; Jetter, Michael; Michler, Peter; Becher, Christoph

2012-10-05

We demonstrate efficient (>30%) quantum frequency conversion of visible single photons (711 nm) emitted by a quantum dot to a telecom wavelength (1313 nm). Analysis of the first- and second-order coherence before and after wavelength conversion clearly proves that pivotal properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with quantum frequency conversion as a promising technique that may pave the way for a number of new applications in quantum technology.

Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots.

PubMed

Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

2015-03-12

Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices.

Quantum dots/silica/polymer nanocomposite films with high visible light transmission and UV shielding properties

NASA Astrophysics Data System (ADS)

Mumin, Md Abdul; Xu, William Z.; Charpentier, Paul A.

2015-08-01

The dispersion of light-absorbing inorganic nanomaterials in transparent plastics such as poly(ethylene-co-vinyl acetate) (PEVA) is of enormous current interest in emerging solar materials, including photovoltaic (PV) modules and commercial greenhouse films. Nanocrystalline semiconductor or quantum dots (QDs) have the potential to absorb UV light and selectively emit visible light, which can control plant growth in greenhouses or enhance PV panel efficiencies. This work provides a new and simple approach for loading mesoporous silica-encapsulated QDs into PEVA. Highly luminescent CdS and CdS-ZnS core-shell QDs with 5 nm size were synthesized using a modified facile approach based on pyrolysis of the single-molecule precursors and capping the CdS QDs with a thin layer of ZnS. To make both the bare and core-shell structure QDs more resistant against photochemical reactions, a mesoporous silica layer was grown on the QDs through a reverse microemulsion technique based on hydrophobic interactions. By careful experimental tuning, this encapsulation technique enhanced the quantum yield (˜65%) and photostability compared to the bare QDs. Both the encapsulated bare and core-shell QDs were then melt-mixed with EVA pellets using a mini twin-screw extruder and pressed into thin films with controlled thickness. The results demonstrated for the first time that mesoporous silica not only enhanced the quantum yield and photostability of the QDs but also improved the compatibility and dispersibility of QDs throughout the PEVA films. The novel light selective films show high visible light transmission (˜90%) and decreased UV transmission (˜75%).

Quantum dots/silica/polymer nanocomposite films with high visible light transmission and UV shielding properties.

PubMed

Mumin, Md Abdul; Xu, William Z; Charpentier, Paul A

2015-08-07

The dispersion of light-absorbing inorganic nanomaterials in transparent plastics such as poly(ethylene-co-vinyl acetate) (PEVA) is of enormous current interest in emerging solar materials, including photovoltaic (PV) modules and commercial greenhouse films. Nanocrystalline semiconductor or quantum dots (QDs) have the potential to absorb UV light and selectively emit visible light, which can control plant growth in greenhouses or enhance PV panel efficiencies. This work provides a new and simple approach for loading mesoporous silica-encapsulated QDs into PEVA. Highly luminescent CdS and CdS-ZnS core-shell QDs with 5 nm size were synthesized using a modified facile approach based on pyrolysis of the single-molecule precursors and capping the CdS QDs with a thin layer of ZnS. To make both the bare and core-shell structure QDs more resistant against photochemical reactions, a mesoporous silica layer was grown on the QDs through a reverse microemulsion technique based on hydrophobic interactions. By careful experimental tuning, this encapsulation technique enhanced the quantum yield (∼65%) and photostability compared to the bare QDs. Both the encapsulated bare and core-shell QDs were then melt-mixed with EVA pellets using a mini twin-screw extruder and pressed into thin films with controlled thickness. The results demonstrated for the first time that mesoporous silica not only enhanced the quantum yield and photostability of the QDs but also improved the compatibility and dispersibility of QDs throughout the PEVA films. The novel light selective films show high visible light transmission (∼90%) and decreased UV transmission (∼75%).

Light-emitting device with organic electroluminescent material and photoluminescent materials

DOEpatents

McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

2005-06-07

A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.

PubMed

Choi, Chang-Hoon; Han, Jaecheon; Park, Jae-Seong; Seong, Tae-Yeon

2013-11-04

The enhanced light output power of a InGaN/AlGaN-based light-emitting diodes (LEDs) using three different types of highly reflective Sn-doped indium oxide (ITO)/Al-based p-type reflectors, namely, ITO/Al, Cu-doped indium oxide (CIO)/s-ITO(sputtered)/Al, and Ag nano-dots(n-Ag)/CIO/s-ITO/Al, is presented. The ITO/Al-based reflectors exhibit lower reflectance (76 - 84% at 365 nm) than Al only reflector (91.1%). However, unlike Al only n-type contact, the ITO/Al-based contacts to p-GaN show good ohmic characteristics. Near-UV (365 nm) InGaN/AlGaN-based LEDs with ITO/Al, CIO/s-ITO/Al, and n-Ag/CIO/s-ITO/Al reflectors exhibit forward-bias voltages of 3.55, 3.48, and 3.34 V at 20 mA, respectively. The LEDs with the ITO/Al and CIO/s-ITO/Al reflectors exhibit 9.5% and 13.5% higher light output power (at 20 mA), respectively, than the LEDs with the n-Ag/CIO/s-ITO/Al reflector. The improved performance of near UV LEDs is attributed to the high reflectance and low contact resistivity of the ITO/Al-based reflectors, which are better than those of conventional Al-based reflectors.

fDOT for in vivo follow-up of tumor development in mice lungs

NASA Astrophysics Data System (ADS)

Koenig, Anne; Hervé, Lionel; Da Silva, Anabela; Dinten, Jean-Marc; Boutet, Jérôme; Berger, Michel; Josserand, Véronique; Coll, Jean-Luc; Peltié, Philippe; Rizo, Philippe

2007-07-01

This paper presents in vivo experiments conducted on cancerous mice bearing mammary murine tumors. In order to reconstruct the fluorescence yield even in highly attenuating and heterogeneous regions like lungs, we developed a fDOT reconstruction method which at first corrects the light propagation model from optical heterogeneities by using the transmitted excitation light measurements. The same approach is also designed to enable working without immersing the mouse in adaptation liquid. The 3D fluorescence map is then reconstructed from the emitted signal of fluorescence and from the corrected propagation model by an ART (Algebraic Reconstruction Technique) algorithm. The system ability to reconstruct fluorescence distribution in presence of high attenuating objects has been validated on phantoms presenting a fluorescent absorbent inclusion. A study was conducted on mice to follow up lungs at different stages of tumor development. The mice were imaged after intravenous injection to the animal of a cancer specific fluorescent marker. A control experiment was conducted in parallel on healthy mice to ensure that the multiple injections of fluorophore did not induce parasite fluorescence distribution. These results validate our system performances for studying small animal lungs tumor evolution. Detection and localization of the fluorophore fixations expresses the tumor development.

Fabrication of three dimensional patterns of wide dimensional range using microbes and their applications

NASA Astrophysics Data System (ADS)

Mehta, Sunita; Murugeson, Saravanan; Prakash, Balaji; Deepak

2015-10-01

Inspired by the wound healing property of certain trees, we report a novel microbes based additive process for producing three dimensional patterns, which has a potential of engineering applications in a variety of fields. Imposing a two dimensional pattern of microbes on a gel media and allowing them to grow in the third dimension is known from its use in biological studies. Instead, we have introduced an intermediate porous substrate between the gel media and the microbial growth, which enables three dimensional patterns in specific forms that can be lifted off and used in engineering applications. In order to demonstrate the applicability of this idea in a diverse set of areas, two applications are selected. In one, using this method of microbial growth, we have fabricated microlenses for enhanced light extraction in organic light emitting diodes, where densely packed microlenses of the diameters of hundreds of microns lead to luminance increase by a factor of 1.24X. In another entirely different type of application, braille text patterns are prepared on a normal office paper where the grown microbial colonies serve as braille tactile dots. Braille dot patterns thus prepared meet the standard specifications (size and spacing) for braille books.

Cd-free Cu-Zn-In-S/ZnS quantum dots@SiO2 multiple cores nanostructure: preparation and application for white LEDs

NASA Astrophysics Data System (ADS)

Jiang, Tongtong; Shen, Mohan; Dai, Peng; Wu, Mingzai; Yu, Xinxin; Li, Guang; Xu, Xiaoliang; Zeng, Haibo

2017-10-01

The work reports the fabrication of Cu doped Zn-In-S (CZIS) alloy quantum dots (QDs) using dodecanethiol and oleic acid as stabilizing ligands. With the increase of doped Cu element, the photoluminescence (PL) peak is monotonically red shifted. After coating ZnS shell, the PL quantum yield of CZIS QDs can reach 78%. Using reverse micelle microemulsion method, CZIS/ZnS QDs@SiO2 multi-core nanospheres were synthesized to improve the colloidal stability and avoid the aggregation of QDs. The obtained multi-core nanospheres were dispersed in curing adhesive, and applied as a color conversion layer in down converted light-emitting diodes. After encapsulation in curing adhesive, the newly designed LEDs show artifically regulated color coordinates with varying the weight ratio of green QDs and red QDs, and the concentrations of these two types of QDs. Moreover, natural white and warm white LEDs with correlated color temperature of 5287, 6732, 2731, and 3309 K can be achieved, which indicates that CZIS/ZnS QDs@SiO2 nanostructures are promising color conversion layer material for solid-state lighting application.

In Situ Crystallization Synthesis of CsPbBr3 Perovskite Quantum Dot-Embedded Glasses with Improved Stability for Solid-State Lighting and Random Upconverted Lasing.

PubMed

Yuan, Shuo; Chen, Daqin; Li, Xinyue; Zhong, Jiasong; Xu, Xuhui

2018-06-06

All-inorganic cesium lead bromide CsPbBr 3 perovskite quantum dots (QDs) are emerging as potential candidates for their applications in optoelectronic devices but they suffer from poor long-term stability due to their high sensitivity to UV irradiation, heat, and especially to moisture. Although great advances in improving stability of perovskite QDs have been achieved by surface modification or encapsulation in polymer and silica, they are not sufficiently refrained from external environment due to nondense structures of these protective layers. In this work, in situ nanocrystallization strategy is developed to directly grow CsPbBr 3 QDs among a specially designed TeO 2 -based glass matrix. As a result, QD-embedded glass shows typical bright green emission assigned to exciton recombination radiation and significant improvement of photon/thermal stability and water resistance due to the effective protecting role of dense structural glass. Particularly, ∼90% of emission intensity is even remained after immersing QD-embedded glass in water up to 120 h, enabling them to find promising applications in white-light-emitting device with superior color stability and low-threshold random upconverted laser under ambient air condition.

Self-illuminating nanoprobe for in vivo imaging of cancers over-expressing the folate receptor

NASA Astrophysics Data System (ADS)

Miller, Steven C.; Beviglia, Lucia; Yeung, Pete; Bhattacharyya, Sukanta; Sobek, Daniel

2012-03-01

New in vivo imaging reagents with increased sensitivity and penetration depth are needed to advance our understanding of metastases and accelerate the development of therapeutics. The folate receptor (FR) is a promising imaging target that is up-regulated in many human carcinomas, including cancers of the ovary, breast, pancreas, endometrium, lungs, kidneys, colon, brain, and myeloid cells. Zymera has developed a self-illuminating Bioluminescence Resonance Energy Transfer Quantum Dot (BRET-Qdot) nanoprobe conjugated with folate (BQ-Folate) for in vivo imaging of cancers overexpressing FR. BQ-Folate is a novel nanoprobe formed by co-conjugating Renilla reniformis luciferase enzyme and folate to near-infrared (NIR) emitting quantum dots. The luciferase substrate, coelenterazine, activates the BQ-Folate nanoprobe generating luminescence emission in the near-infrared (NIR) region (655 nm) for increased sensitivity and penetration depth. Because BQ-Folate requires no external light source for light emission, it has significant advantages for challenging in vivo preclinical optical imaging applications, such as the detection of early stage metastases. Zymera and OncoMed Pharmaceuticals have demonstrated that in vivo imaging with the BQ-Folate nanoprobe detected the primary tumor and early stage metastases in an orthotopic NOD/SCID mouse model of human pancreatic cancer.

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5°. Consequently high efficiency high brightness arrays of micro-LEDs becomes possible. For single emitters the approach is particularly interesting for oscillator strength engineering allowing high speed data transmission and for single photonics applying single quantum dot (QD) emitters and allowing >90% coupling of the emission into single mode fiber. We also note that for longer wavelength ( 1300nm) QDs the thickness of the layers and surface patterns significantly increase allowing greatly reduced processing tolerances and applying further simplifications due to the possibility of using high contrast GaAs-AlOx DBRs.

Nano-scale engineering using lead chalcogenide nanocrystals for opto-electronic applications

NASA Astrophysics Data System (ADS)

Xu, Fan

Colloidal quantum dots (QDs) or nanocrystals of inorganic semiconductors exhibit exceptional optoelectronic properties such as tunable band-gap, high absorption cross-section and narrow emission spectra. This thesis discusses the characterizations and physical properties of lead-chalcogenide nanocrystals, their assembly into more complex nanostructures and applications in solar cells and near-infrared light-emitting devices. In the first part of this work, we demonstrate that the band edge emission of PbS quantum dots can be tuned from the visible to the mid-infrared region through size control, while the self-attachment of PbS nanocrystals can lead to the formation of 1-D nanowires, 2-D quantum dot monolayers and 3-D quantum dot solids. In particular, the assembly of closely-packed quantum dot solids has attracted enormous attention. A series of distinctive optoelectronic properties has been observed, such as superb multiple exciton generation efficiencies, efficient hot-electron transfer and cold-exciton recycling. Since the surfactant determines the quantum dot surface passivation and inter dot electronic coupling, we examine the influence of different cross-linking surfactants on the optoelectronic properties of the quantum dot solids. Then, we discuss the ability to tune the quantum dot band-gap combined with the controllable assembly of lead-chalcogenide quantum dots, which opens new possibilities to engineer the properties of quantum dot solids. The PbS and PbSe quantum dot cascade structures and PbS/PbSe quantum dot heterojunctions are assembled using the layer-by-layer deposition method. We show that exciton funnelling and trap state-bound exciton recycling in the quantum dot cascade structure dramatically enhances the quantum dots photoluminescence. Moreover, we show that both type-I and type-II PbS/PbSe quantum dot heterojunctions can be assembled by carefully choosing the quantum dot sizes. In type-I heterojunctions, the excited electron-hole pairs tend to localize in narrower band-gap quantum dots, leading to significant photoluminescence enhancement. In contrast, the staggered energy bands in type-II heterojunctions lead to rapid exciton separation at the junctions that considerably quenches the photoluminescence. As such, this strategy can be fruitfully employed to enhance performances in nanocrystal-based photovoltaic devices. Using this approach, we achieve efficient PbS nanocrystal-based solar cells using an ITO/ TiO2/ PbS QDs/Au architecture, where a porous TiO2 nanowire network is employed as electron transporting layer. Our best heterojunction solar cells exhibit a decent short circuit current of 2.5 mA/cm2, a large open circuit voltage of 0.6 V and a power converting efficiency of 5.4 % under 8.5 mW/cm2 low-light illumination. On the other hand, nanocrystal-based near infrared LED devices are fabricated using a simple ITO-PbS QDs-Al device structure. There, the active quantum dot layer serves as both the electron- and hole-transporting layer. With appropriate surface chemistry treatment on quantum dots, a high-brightness near-infrared LED device is achieved.

Single step deposition of an interacting layer of a perovskite matrix with embedded quantum dots

NASA Astrophysics Data System (ADS)

Ngo, Thi Tuyen; Suarez, Isaac; Sanchez, Rafael S.; Martinez-Pastor, Juan P.; Mora-Sero, Ivan

2016-07-01

Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by photoluminescence and electroluminescence experiments. The radiative exciplex relaxation is centered in the near infrared region (NIR), ~1200 nm, which corresponds to lower energies than the corresponding band gap of both perovskite (PS) and QDs. Our approach allows the fabrication of multi-wavelength light emitting diodes (LEDs) based on a PS matrix with embedded QDs, which show considerably low turn-on potentials. The presence of the exciplex state of PS and QDs opens up a broad range of possibilities with important implications in both LEDs and solar cells.Hybrid lead halide perovskite (PS) derivatives have emerged as very promising materials for the development of optoelectronic devices in the last few years. At the same time, inorganic nanocrystals with quantum confinement (QDs) possess unique properties that make them suitable materials for the development of photovoltaics, imaging and lighting applications, among others. In this work, we report on a new methodology for the deposition of high quality, large grain size and pinhole free PS films (CH3NH3PbI3) with embedded PbS and PbS/CdS core/shell Quantum Dots (QDs). The strong interaction between both semiconductors is revealed by the formation of an exciplex state, which is monitored by photoluminescence and electroluminescence experiments. The radiative exciplex relaxation is centered in the near infrared region (NIR), ~1200 nm, which corresponds to lower energies than the corresponding band gap of both perovskite (PS) and QDs. Our approach allows the fabrication of multi-wavelength light emitting diodes (LEDs) based on a PS matrix with embedded QDs, which show considerably low turn-on potentials. The presence of the exciplex state of PS and QDs opens up a broad range of possibilities with important implications in both LEDs and solar cells. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr04082a

Single photon emission from charged excitons in CdTe/ZnTe quantum dots

NASA Astrophysics Data System (ADS)

Belyaev, K. G.; Rakhlin, M. V.; Sorokin, S. V.; Klimko, G. V.; Gronin, S. V.; Sedova, I. V.; Mukhin, I. S.; Ivanov, S. V.; Toropov, A. A.

2017-11-01

We report on micro-photoluminescence studies of individual self-organized CdTe/ZnTe quantum dots intended for single-photon-source applications in a visible spectral range. The quantum dots surface density below 1010 per cm2 was achieved by using a thermally activated regime of molecular beam epitaxy that allowed fabrication of etched mesa-structures containing only a few emitting quantum dots. The single photon emission with the autocorrelation function g(2)(0)<0.2 was detected and identified as recombination of charged excitons in the individual quantum dot.

Electron beam induced and microemulsion templated synthesis of CdSe quantum dots: tunable broadband emission and charge carrier recombination dynamics

NASA Astrophysics Data System (ADS)

Guleria, Apurav; Singh, Ajay K.; Rath, Madhab C.; Adhikari, Soumyakanti

2015-04-01

CdSe quantum dots (QDs) were synthesized by a rapid and one step templated approach inside the water pool of AOT (sodium bis(2-ethylhexyl) sulfosuccinate) based water-in-oil microemulsions (MEs) via electron beam (EB) irradiation technique with high dose rate, which favours high nucleation rate. The interplay of different experimental parameters such as precursor concentration, absorbed dose and {{W}0} values (aqueous phase to surfactant molar ratio) of MEs were found to have interesting consequences on the morphology, photoluminescence (PL), surface composition and carrier recombination dynamics of as-grown QDs. For instance, highly stable ultrasmall (∼1.7 nm) bluish-white light emitting QDs were obtained with quantum efficiency (η) of ∼9%. Furthermore, QDs were found to exhibit tunable broadband light emission extending from 450 to 750 nm (maximum FWHM ∼180 nm). This could be realized from the CIE (Commission Internationale d’Eclairage) chromaticity co-ordinates, which varied across the blue region to the orange region thereby, conferring their potential application in white light emitting diodes. Additionally, the average PL lifetime ≤ft( ≤ft< τ \\right> \\right) values could be varied from 18 ns to as high as 74 ns, which reflect the role of surface states in terms of their density and distribution. Another interesting revelation was the self-assembling of the initially formed QDs into nanorods with high aspect ratios ranging from 7 to 20, in correspondence with the {{W}0} values. Besides, the fundamental roles of the chemical nature of water pool and the interfacial fluidity of AOT MEs in influencing the photophysical properties of QDs were investigated by carrying out a similar study in CTAB (cetyltrimethylammonium bromide; cationic surfactant) based MEs. Surprisingly, very profound and contrasting results were observed wherein ≤ft< τ \\right> and η of the QDs in case of CTAB MEs were found to be at least three times lower as compared to that in AOT MEs.

Droplet-based microreactor for synthesis of water-soluble Ag₂S quantum dots.

PubMed

Shu, Yun; Jiang, Peng; Pang, Dai-Wen; Zhang, Zhi-Ling

2015-07-10

A droplet-based microreactor was used for synthesis of water-soluble Ag2S quantum dots (QDs). Monodispersed Ag2S nanoparticles with a surface of carboxylic acid-terminated were synthesized in the droplet microreactor. The x-ray powder diffraction results indicated products were monoclinic Ag2S nanocrystals. Furthermore, different-sized Ag2S QDs that were near-infrared-emitting or visible-emitting were continuously stably synthesized in droplet microreactors at different temperatures. We believe we offer a new method for obtaining different-sized Ag2S nanoparticles.

Droplet-based microreactor for synthesis of water-soluble Ag2S quantum dots

NASA Astrophysics Data System (ADS)

Shu, Yun; Jiang, Peng; Pang, Dai-Wen; Zhang, Zhi-Ling

2015-07-01

A droplet-based microreactor was used for synthesis of water-soluble Ag2S quantum dots (QDs). Monodispersed Ag2S nanoparticles with a surface of carboxylic acid-terminated were synthesized in the droplet microreactor. The x-ray powder diffraction results indicated products were monoclinic Ag2S nanocrystals. Furthermore, different-sized Ag2S QDs that were near-infrared-emitting or visible-emitting were continuously stably synthesized in droplet microreactors at different temperatures. We believe we offer a new method for obtaining different-sized Ag2S nanoparticles.

Coffee-Ring-Free Quantum Dot Thin Film Using Inkjet Printing from a Mixed-Solvent System on Modified ZnO Transport Layer for Light-Emitting Devices.

PubMed

Jiang, Congbiao; Zhong, Zhiming; Liu, Baiquan; He, Zhiwei; Zou, Jianhua; Wang, Lei; Wang, Jian; Peng, JunBiao; Cao, Yong

2016-10-05

Inkjet printing has been considered an available way to achieve large size full-color RGB quantum dots LED display, and the key point is to obtain printed film with uniform and flat surface profile. In this work, mixed solvent of 20 vol % 1,2-dichlorobenzene (oDCB) with cyclohexylbenzene (CHB) was used to dissolve green quantum dots (QDs) with CdSe@ZnS/ZnS core/shell structure. Then, by inkjet printing, a flat dotlike QDs film without the coffee ring was successfully obtained on polyetherimide (PEI)-modified ZnO layer, and the printed dots array exhibited great stability and repeatability. Here, adding oDCB into CHB solutions was used to reduce surface tension, and employing ZnO nanoparticle layer with PEI-modified was used to increase the surface free energy. As a result, a small contact angle is formed, which leads to the enhancement of evaporation rate, and then the coffee ring effect was suppressed. The printed dots with flat surface profile were eventually realized. Moreover, inverted green QD-LEDs with PEI-modified ZnO film as electron transport layer (ETL) and printed green QDs film as emission layer were successfully fabricated. The QD-LEDs exhibited the maximum luminance of 12 000 cd/m 2 and the peak current efficiency of 4.5 cd/A at luminance of 1500 cd/m 2 .

Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

PubMed

Liu, Xiangkai; Zhao, Shuangyi; Gu, Wei; Zhang, Yuting; Qiao, Xvsheng; Ni, Zhenyi; Pi, Xiaodong; Yang, Deren

2018-02-14

Colloidal silicon quantum dots (Si QDs) hold ever-growing promise for the development of novel optoelectronic devices such as light-emitting diodes (LEDs). Although it has been proposed that ligands at the surface of colloidal Si QDs may significantly impact the performance of LEDs based on colloidal Si QDs, little systematic work has been carried out to compare the performance of LEDs that are fabricated using colloidal Si QDs with different ligands. Here, colloidal Si QDs with rather short octyl ligands (Octyl-Si QDs) and phenylpropyl ligands (PhPr-Si QDs) are employed for the fabrication of LEDs. It is found that the optical power density of PhPr-Si QD LEDs is larger than that of Octyl-Si QD LEDs. This is due to the fact that the surface of PhPr-Si QDs is more oxidized and less defective than that of Octyl-Si QDs. Moreover, the benzene rings of phenylpropyl ligands significantly enhance the electron transport of QD LEDs. It is interesting that the external quantum efficiency (EQE) of PhPr-Si QD LEDs is lower than that of Octyl-Si QD LEDs because the benzene rings of phenylpropyl ligands suppress the hole transport of QD LEDs. The unbalance between the electron and hole injection in PhPr-Si QD LEDs is more serious than that in Octyl-Si QD LEDs. The currently obtained highest optical power density of ∼0.64 mW/cm 2 from PhPr-Si QD LEDs and highest EQE of ∼6.2% from Octyl-Si QD LEDs should encourage efforts to further advance the development of high-performance optoelectronic devices based on colloidal Si QDs.

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.

PubMed

Barettin, Daniele; Maur, Matthias Auf der; Carlo, Aldo di; Pecchia, Alessandro; Tsatsulnikov, Andrei F; Sakharov, Alexei V; Lundin, Wsevolod V; Nikolaev, Andrei E; Usov, Sergey O; Cherkashin, Nikolay; Hÿtch, Martin J; Karpov, Sergey Yu

2017-01-06

The impact of electromechanical coupling on optical properties of light-emitting diodes (LEDs) with InGaN/GaN quantum-dot (QD) active regions is studied by numerical simulations. The structure, i.e. the shape and the average In content of the QDs, has been directly derived from experimental data on out-of-plane strain distribution obtained from the geometric-phase analysis of a high-resolution transmission electron microscopy image of an LED structure grown by metalorganic vapor-phase epitaxy. Using continuum [Formula: see text] calculations, we have studied first the lateral and full electromechanical coupling between the QDs in the active region and its impact on the emission spectrum of a single QD located in the center of the region. Our simulations demonstrate the spectrum to be weakly affected by the coupling despite the strong common strain field induced in the QD active region. Then we analyzed the effect of vertical coupling between vertically stacked QDs as a function of the interdot distance. We have found that QCSE gives rise to a blue-shift of the overall emission spectrum when the interdot distance becomes small enough. Finally, we compared the theoretical spectrum obtained from simulation of the entire active region with an experimental electroluminescence (EL) spectrum. While the theoretical peak emission wavelength of the selected central QD corresponded well to that of the EL spectrum, the width of the latter one was determined by the scatter in the structures of various QDs located in the active region. Good agreement between the simulations and experiment achieved as a whole validates our model based on realistic structure of the QD active region and demonstrates advantages of the applied approach.

All-solution-processed, multilayered CuInS₂/ZnS colloidal quantum-dot-based electroluminescent device.

PubMed

Kim, Jong-Hoon; Yang, Heesun

2014-09-01

While significant progress of electroluminescent (EL) quantum dot light-emitting diodes (QD-LEDs) that rely exclusively on Cd-containing II-VI quantum dots (QDs) has been reported over the past two decades with respect to device processing and performance, devices based on non-Cd QDs as an active emissive layer (EML) remain at the early stage of development. In this work, utilizing highly luminescent colloidal CuInS2 (CIS)/ZnS QDs, all-solution-processed multilayered QD-LEDs are fabricated by sequentially spin depositing a hole transport layer of poly(9-vinlycarbazole), an EML of CIS/ZnS QDs, and an electron transport layer of ZnO nanoparticles. Our focus in device fabrication is to vary the thickness of the QD EML, which is one of the primary determinants in EL performance but has not been addressed in earlier reports. The device with an optimal EML thickness exhibits a peak luminance of 1564  cd/m2 and current efficiency of 2.52  cd/A. This record value in efficiency is higher by 3-4 times that of CIS QD-LEDs reported previously.

C8-structured carbon quantum dots: Synthesis, blue and green double luminescence, and origins of surface defects

NASA Astrophysics Data System (ADS)

Xifang, Chen; Wenxia, Zhang; Qianjin, Wang; Jiyang, Fan

Carbon quantum dots (CQDs) have attracted great attention in the past few years due to their low cytotoxicity, exploited various synthesis methods, unexampled abundance of raw materials on earth, and robust near-infrared to near-UV luminescence. Carbon nanoparticles have applications in biological labeling, delivery of drugs and biological molecules into cells, and light emitting diodes and lasing. CQDs generally exist as nanodiamonds or graphite quantum dots according to previous research reports. In this study, we report the first synthesis of the third-allotrope CQDs through carbonization of sucrose and study their luminescence properties. These CQDs have a body-centered cubic structure and each lattice point is composed of eight atoms which form a sub-cube (so called C8 crystal structure). High-resolution transmission electron microscopy and X-ray diffraction confirm the C8 structure of the synthesized carbon nanocrystallites with an average size of 2 nm. The C8 CQDs exhibit double-band luminescence with two peaks centered at around 432 and 520 nm. The study based on the photoluminescence, UV-Vis absorption, Fourier-transform infrared, and X-ray photoelectron spectroscopies reveals that the green emission originates from the C=O related surface defect.

Room temperature synthesis of Mn2+ doped ZnS d-dots and observation of tunable dual emission: Effects of doping concentration, temperature, and ultraviolet light illumination

NASA Astrophysics Data System (ADS)

Kole, A. K.; Tiwary, C. S.; Kumbhakar, P.

2013-03-01

Mn2+ doped (0-50.0 molar %) ZnS d-dots have been synthesized in water medium by using an environment friendly low cost chemical technique. Tunable dual emission in UV and yellow-orange regions is achieved by tailoring the Mn2+ doping concentration in the host ZnS nanocrystal. The optimum doping concentration for achieving efficient photoluminescence (PL) emission is determined to be ˜1.10 (at. %) corresponding to 40.0 (molar %) of Mn2+ doping concentration used during synthesis. The mechanism of charge transfer from the host to the dopant leading to the intensity modulated tunable (594-610 nm) yellow-orange PL emission is straightforwardly understood as no capping agent is used. The temperature dependent PL emission measurements are carried out, viz., in 1.10 at. % Mn2+ doped sample and the experimental results are explained by using a theoretical PL emission model. It is found that the ratio of non-radiative to radiative recombination rates is temperature dependent and this phenomenon has not been reported, so far, in Mn2+ doped ZnS system. The colour tuning of the emitted light from the samples are evident from the calculated chromaticity coordinates. UV light irradiation for 150 min in 40.0 (molar %) Mn2+ doped sample shows an enhancement of 33% in PL emission intensity.

High performance organic distributed Bragg reflector lasers fabricated by dot matrix holography.

PubMed

Wan, Wenqiang; Huang, Wenbin; Pu, Donglin; Qiao, Wen; Ye, Yan; Wei, Guojun; Fang, Zongbao; Zhou, Xiaohong; Chen, Linsen

2015-12-14

We report distributed Bragg reflector (DBR) polymer lasers fabricated using dot matrix holography. Pairs of distributed Bragg reflector mirrors with variable mirror separations are fabricated and a novel energy transfer blend consisting of a blue-emitting conjugated polymer and a red-emitting one is spin-coated onto the patterned substrate to complete the device. Under optical pumping, the device emits sing-mode lasing around 622 nm with a bandwidth of 0.41 nm. The working threshold is as low as 13.5 μJ/cm² (~1.68 kW/cm²) and the measured slope efficiency reaches 5.2%. The distributed feedback (DFB) cavity and the DBR cavity resonate at the same lasing wavelength while the DFB laser shows a much higher threshold. We further show that flexible DBR lasers can be conveniently fabricated through the UV-imprinting technique by using the patterned silica substrate as the mold. Dot matrix holography represents a versatile approach to control the number, the size, the location and the orientation of DBR mirrors, thus providing great flexibility in designing DBR lasers.

Biocide immobilized OMMT-carbon dot reduced Cu2O nanohybrid/hyperbranched epoxy nanocomposites: Mechanical, thermal, antimicrobial and optical properties.

PubMed

De, Bibekananda; Gupta, Kuldeep; Mandal, Manabendra; Karak, Niranjan

2015-11-01

The present work demonstrated a transparent thermosetting nanocomposite with antimicrobial and photoluminescence attributes. The nanocomposites are fabricated by incorporation of different wt.% (1, 2 and 3) of a biocide immobilized OMMT-carbon dot reduced Cu2O nanohybrid (MITH-NH) in the hyperbranched epoxy matrix. MITH-NH is obtained by immobilization of 2-methyl-4-isothiazolin-3-one hydrochloride (MITH) at room temperature using sonication on OMMT-carbon dot reduced Cu2O nanohybid. The nanohybrid is prepared by reduction of cupric acetate using carbon dot as the reducing agent in the presence of OMMT at 70°C. The significant improvements in tensile strength (~2 fold), elongation at break (3 fold), toughness (4 fold) and initial thermal degradation temperature (30°C) of the pristine hyperbranched epoxy system are achieved by incorporation of 3wt.% of MITH-NH in it. The nanocomposites exhibit strong antimicrobial activity against Staphylococcus aureus, Bacillus subtilis, Klebsiella pneumoniae and Pseudomonas aeruginosa bacteria and Candida albicans, a fungus. The nanocomposite also shows significant activity against biofilm formation compared to the pristine thermoset. Further, the nanocomposite films emit different colors on exposure of different wavelengths of UV light. The properties of these nanocomposites are also compared with the same nanohybrid without OMMT. Copyright © 2015. Published by Elsevier B.V.

Double channel emission from a redox active single component quantum dot complex.

PubMed

Bhandari, Satyapriya; Roy, Shilaj; Pramanik, Sabyasachi; Chattopadhyay, Arun

2015-01-13

Herein we report the generation and control of double channel emission from a single component system following a facile complexation reaction between a Mn(2+) doped ZnS colloidal quantum dot (Qdot) and an organic ligand (8-hydroxy quinoline; HQ). The double channel emission of the complexed quantum dot-called the quantum dot complex (QDC)-originates from two independent pathways: one from the complex (ZnQ2) formed on the surface of the Qdot and the other from the dopant Mn(2+) ions of the Qdot. Importantly, reaction of ZnQ2·2H2O with the Qdot resulted in the same QDC formation. The emission at 500 nm with an excitation maximum at 364 nm is assigned to the surface complex involving ZnQ2 and a dangling sulfide bond. On the other hand, the emission at 588 nm-with an excitation maximum at 330 nm-which is redox tunable, is ascribed to Mn(2+) dopant. The ZnQ2 complex while present in QDC has superior thermal stability in comparison to the bare complex. Interestingly, while the emission of Mn(2+) was quenched by an electron quencher (benzoquinone), that due to the surface complex remained unaffected. Further, excitation wavelength dependent tunability in chromaticity color coordinates makes the QDC a potential candidate for fabricating a light emitting device of desired color output.

Photon antibunching from a single quantum-dot-microcavity system in the strong coupling regime.

PubMed

Press, David; Götzinger, Stephan; Reitzenstein, Stephan; Hofmann, Carolin; Löffler, Andreas; Kamp, Martin; Forchel, Alfred; Yamamoto, Yoshihisa

2007-03-16

We observe antibunching in the photons emitted from a strongly coupled single quantum dot and pillar microcavity in resonance. When the quantum dot was spectrally detuned from the cavity mode, the cavity emission remained antibunched, and also anticorrelated from the quantum dot emission. Resonant pumping of the selected quantum dot via an excited state enabled these observations by eliminating the background emitters that are usually coupled to the cavity. This device demonstrates an on-demand single-photon source operating in the strong coupling regime, with a Purcell factor of 61+/-7 and quantum efficiency of 97%.

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes.

PubMed

Subramanian, Alagesan; Pan, Zhenghui; Zhang, Zhenbo; Ahmad, Imtiaz; Chen, Jing; Liu, Meinan; Cheng, Shuang; Xu, Yijun; Wu, Jun; Lei, Wei; Khan, Qasim; Zhang, Yuegang

2018-04-18

All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr 3 -based PeLED with an inverted architecture using lithium-doped TiO 2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A -1 , a luminance efficiency of 2210 cd m -2 , and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr 3 -based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO 2 compared to that for undoped TiO 2 -based devices.

Embedded Ag/Ni Metal-Mesh with Low Surface Roughness As Transparent Conductive Electrode for Optoelectronic Applications.

PubMed

Chen, Xiaolian; Guo, Wenrui; Xie, Liming; Wei, Changting; Zhuang, Jinyong; Su, Wenming; Cui, Zheng

2017-10-25

Metal-mesh is one of the contenders to replace indium tin oxide (ITO) as transparent conductive electrodes (TCEs) for optoelectronic applications. However, considerable surface roughness accompanying metal-mesh type of transparent electrodes has been the root cause of electrical short-circuiting for optoelectronic devices, such as organic light-emitting diode (OLED) and organic photovoltaic (OPV). In this work, a novel approach to making metal-mesh TCE has been proposed that is based on hybrid printing of silver (Ag) nanoparticle ink and electroplating of nickel (Ni). By polishing back the electroplated Ni, an extremely smooth surface was achieved. The fabricated Ag/Ni metal-mesh TCE has a surface roughness of 0.17 nm, a low sheet resistance of 2.1 Ω/□, and a high transmittance of 88.6%. The figure of merit is 1450, which is 30 times better than ITO. In addition, the Ag/Ni metal-mesh TCE shows outstanding mechanical flexibility and environmental stability at high temperature and humidity. Using the polished Ag/Ni metal-mesh TCE, a flexible quantum dot light-emitting diode (QLED) was fabricated with an efficiency of 10.4 cd/A and 3.2 lm/W at 1000 cd/m 2 .

Nanostructured organosilicon luminophores as a new concept of nanomaterials for highly efficient down-conversion of light

NASA Astrophysics Data System (ADS)

Ponomarenko, Sergey A.; Surin, Nikolay M.; Borshchev, Oleg V.; Skorotetcky, Maxim S.; Muzafarov, Aziz M.

2015-10-01

Nanostructured organosilicon luminophores (NOLs) are branched molecular structures having two types of covalently bonded via silicon atoms organic luminophores with efficient Förster energy transfer between them. They combine the best properties of organic luminophores and inorganic quantum dots: high absorption cross-section, excellent photoluminescence quantum yield, fast luminescence decay time, good processability and low toxicity. A smart choice of organic luminophores allowed us to design and synthesize a library of NOLs, absorbing from VUV to visible region and emitting at the desired wavelengths from 390 to 650 nm. They can be used as unique wavelength shifters in plastic scintillators and other applications.

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

NASA Astrophysics Data System (ADS)

Barettin, Daniele; Auf der Maur, Matthias; di Carlo, Aldo; Pecchia, Alessandro; Tsatsulnikov, Andrei F.; Lundin, Wsevolod V.; Sakharov, Alexei V.; Nikolaev, Andrei E.; Korytov, Maxim; Cherkashin, Nikolay; Hÿtch, Martin J.; Karpov, Sergey Yu

2017-07-01

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current-voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of LED structures and their efficiency and should be taken into account while further comparing performances of MQW and QD-based LEDs. In contrast to experimental results, our simulations did not reveal any advantages of using QD-based ARs over the MQW ones, if the same recombination constants are assumed for both cases. This fact demonstrates importance of accounting for growth-dependent factors, like crystal quality, which may limit the device performance. Nevertheless, a more uniform carrier injection into multi-layer QD ARs predicted by modeling may serve as the basis for further improvement of LED efficiency by lowering carrier density in individual QDs and, hence, suppressing the Auger recombination losses.

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes.

PubMed

Barettin, Daniele; Auf der Maur, Matthias; di Carlo, Aldo; Pecchia, Alessandro; Tsatsulnikov, Andrei F; Lundin, Wsevolod V; Sakharov, Alexei V; Nikolaev, Andrei E; Korytov, Maxim; Cherkashin, Nikolay; Hÿtch, Martin J; Karpov, Sergey Yu

2017-07-07

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current-voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of LED structures and their efficiency and should be taken into account while further comparing performances of MQW and QD-based LEDs. In contrast to experimental results, our simulations did not reveal any advantages of using QD-based ARs over the MQW ones, if the same recombination constants are assumed for both cases. This fact demonstrates importance of accounting for growth-dependent factors, like crystal quality, which may limit the device performance. Nevertheless, a more uniform carrier injection into multi-layer QD ARs predicted by modeling may serve as the basis for further improvement of LED efficiency by lowering carrier density in individual QDs and, hence, suppressing the Auger recombination losses.

Charge Transport between Coupling Colloidal Perovskite Quantum Dots Assisted by Functional Conjugated Ligands.

PubMed

Dai, Jinfei; Xi, Jun; Li, Lu; Zhao, JingFeng; Shi, Yifei; Zhang, Wenwen; Ran, Chenxin; Jiao, Bo; Hou, Xun; Duan, Xinhua; Wu, Zhaoxin

2018-05-14

Long alkyl-chain capping ligands are indispensable for preparing stable colloidal quantum dots. However, its insulating feature blocks efficient carrier transport among QDs, leading to inferior performance in light-emitting diodes (LEDs). The trade-off between conductivity and colloidal stability of QDs has now been overcome. Methylamine lead bromide (MAPbBr 3 ) QDs with a conjugated alkyl-amine, 3-phenyl-2-propen-1-amine (PPA), as ligands were prepared. Owing to electron cloud overlapping and the delocalization effect of conjugated molecules, the conductivity and carrier mobility of PPA-QDs films increased almost 22 times over that of OA-QD films without compromising colloidal stability and photoluminescence. PPA-QDs LEDs exhibit a maximum current efficiency of 9.08 cd A -1 , which is 8 times of that of OA-QDs LEDs (1.14 cd A -1 ). This work provides critical solution for the poor conductivity of QDs in applications of energy-related devices. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Performance CuInS 2 Quantum Dot Laminated Glass Luminescent Solar Concentrators for Windows

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bergren, Matthew R.; Makarov, Nikolay S.; Ramasamy, Karthik

Building-integrated sunlight harvesting utilizing laminated glass luminescent solar concentrators (LSCs) is proposed. By incorporating high quantum yield (>90%), NIR-emitting CuInS2/ZnS quantum dots into the polymer interlayer between two sheets of low-iron float glass, a record optical efficiency of 8.1% is demonstrated for a 10 cm x 10 cm device that transmits ~44% visible light. After completing prototypes by attaching silicon solar cells along the perimeter of the device, the electrical power conversion efficiency was certified at 2.2% with a black background and at 2.9% using a reflective substrate. This 'drop-in' LSC solution is particularly attractive because it fits within themore » existing glazing industry value chain with only modest changes to typical glazing products. Performance modeling predicts >1 GWh annual electricity production for a typical urban skyscraper in most major U.S. cities, enabling significant energy cost savings and potentially 'net-zero' buildings.« less

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

DOE PAGES

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; ...

2017-05-16

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less

Silicon Nanoparticles with Surface Nitrogen: 90% Quantum Yield with Narrow Luminescence Bandwidth and the Ligand Structure Based Energy Law.

PubMed

Li, Qi; Luo, Tian-Yi; Zhou, Meng; Abroshan, Hadi; Huang, Jingchun; Kim, Hyung J; Rosi, Nathaniel L; Shao, Zhengzhong; Jin, Rongchao

2016-09-27

Silicon nanoparticles (NPs) have been widely accepted as an alternative material for typical quantum dots and commercial organic dyes in light-emitting and bioimaging applications owing to silicon's intrinsic merits of least toxicity, low cost, and high abundance. However, to date, how to improve Si nanoparticle photoluminescence (PL) performance (such as ultrahigh quantum yield, sharp emission peak, high stability) is still a major issue. Herein, we report surface nitrogen-capped Si NPs with PL quantum yield up to 90% and narrow PL bandwidth (full width at half-maximum (fwhm) ≈ 40 nm), which can compete with commercial dyes and typical quantum dots. Comprehensive studies have been conducted to unveil the influence of particle size, structure, and amount of surface ligand on the PL of Si NPs. Especially, a general ligand-structure-based PL energy law for surface nitrogen-capped Si NPs is identified in both experimental and theoretical analyses, and the underlying PL mechanisms are further discussed.

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less

Electrically driven quantum light emission in electromechanically tuneable photonic crystal cavities

NASA Astrophysics Data System (ADS)

Petruzzella, M.; Pagliano, F. M.; Zobenica, Ž.; Birindelli, S.; Cotrufo, M.; van Otten, F. W. M.; van der Heijden, R. W.; Fiore, A.

2017-12-01

A single quantum dot deterministically coupled to a photonic crystal environment constitutes an indispensable elementary unit to both generate and manipulate single-photons in next-generation quantum photonic circuits. To date, the scaling of the number of these quantum nodes on a fully integrated chip has been prevented by the use of optical pumping strategies that require a bulky off-chip laser along with the lack of methods to control the energies of nano-cavities and emitters. Here, we concurrently overcome these limitations by demonstrating electrical injection of single excitonic lines within a nano-electro-mechanically tuneable photonic crystal cavity. When an electrically driven dot line is brought into resonance with a photonic crystal mode, its emission rate is enhanced. Anti-bunching experiments reveal the quantum nature of these on-demand sources emitting in the telecom range. These results represent an important step forward in the realization of integrated quantum optics experiments featuring multiple electrically triggered Purcell-enhanced single-photon sources embedded in a reconfigurable semiconductor architecture.

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

PubMed Central

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.

2017-01-01

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications. PMID:28508866

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using the small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting stronger quantum confinement. The cubic-phase perovskite NCs were formed despite the reaction temperatures increased from 140 to 180 °C. However, monodispersive NC cubes which are required for densely packing self-assembly film were only formed at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lowermore » temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus, the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.« less

Quantifying exciton hopping in disordered media with quenching sites: Application to arrays of quantum dots

NASA Astrophysics Data System (ADS)

Miyazaki, Jun

2013-10-01

We present an analytical method for quantifying exciton hopping in an energetically disordered system with quenching sites. The method is subsequently used to provide a quantitative understanding of exciton hopping in a quantum dot (QD) array. Several statistical quantities that characterize the dynamics (survival probability, average number of distinct sites visited, average hopping distance, and average hopping rate in the initial stage) are obtained experimentally by measuring time-resolved fluorescence intensities at various temperatures. The time evolution of these quantities suggests in a quantitative way that at low temperature an exciton tends to be trapped at a local low-energy site, while at room temperature, exciton hopping occurs repeatedly, leading to a large hopping distance. This method will serve to facilitate highly efficient optoelectronic devices using QDs such as photovoltaic cells and light-emitting diodes, since exciton hopping is considered to strongly influence their operational parameters. The presence of a dark QD (quenching site) that exhibits fast decay is also quantified.

Fluorescent Carbon Dots Derived from Maillard Reaction Products: Their Properties, Biodistribution, Cytotoxicity, and Antioxidant Activity.

PubMed

Li, Dongmei; Na, Xiaokang; Wang, Haitao; Xie, Yisha; Cong, Shuang; Song, Yukun; Xu, Xianbing; Zhu, Bei-Wei; Tan, Mingqian

2018-02-14

Food-borne nanoparticles have received great attention because of their unique physicochemical properties and potential health risk. In this study, carbon dots (CDs) formed during one of the most important chemical reactions in the food processing field, the Maillard reaction from the model system including glucose and lysine, were investigated. The CDs purified from Maillard reaction products emitted a strong blue fluorescence under ultraviolet light with a fluorescent quantum yield of 16.30%. In addition, they were roughly spherical, with sizes of around 4.3 nm, and mainly composed of carbon, oxygen, hydrogen, and nitrogen. Their surface groups such as hydroxyl, amino, and carboxyl groups were found to possibly enable CDs to scavenge DPPH and hydroxyl radicals. Furthermore, the cytotoxicity assessment of CDs showed that they could readily enter HepG2 cells while causing negligible cell death at low concentration. However, high CDs concentrations were highly cytotoxic and led to cell death via interference of the glycolytic pathway.

Successive and large-scale synthesis of InP/ZnS quantum dots in a hybrid reactor and their application to white LEDs

NASA Astrophysics Data System (ADS)

Kim, Kyungnam; Jeong, Sohee; Woo, Ju Yeon; Han, Chang-Soo

2012-02-01

We report successive and large-scale synthesis of InP/ZnS core/shell nanocrystal quantum dots (QDs) using a customized hybrid flow reactor, which is based on serial combination of a batch-type mixer and a flow-type furnace. InP cores and InP/ZnS core/shell QDs were successively synthesized in the hybrid reactor in a simple one-step process. In this reactor, the flow rate of the solutions was typically 1 ml min-1, 100 times larger than that of conventional microfluidic reactors. In order to synthesize high-quality InP/ZnS QDs, we controlled both the flow rate and the crystal growth temperature. Finally, we obtained high-quality InP/ZnS QDs in colors from bluish green to red, and we demonstrated that these core/shell QDs could be incorporated into white-light-emitting diode (LED) devices to improve color rendering performance.

Successive and large-scale synthesis of InP/ZnS quantum dots in a hybrid reactor and their application to white LEDs.

PubMed

Kim, Kyungnam; Jeong, Sohee; Woo, Ju Yeon; Han, Chang-Soo

2012-02-17

We report successive and large-scale synthesis of InP/ZnS core/shell nanocrystal quantum dots (QDs) using a customized hybrid flow reactor, which is based on serial combination of a batch-type mixer and a flow-type furnace. InP cores and InP/ZnS core/shell QDs were successively synthesized in the hybrid reactor in a simple one-step process. In this reactor, the flow rate of the solutions was typically 1 ml min(-1), 100 times larger than that of conventional microfluidic reactors. In order to synthesize high-quality InP/ZnS QDs, we controlled both the flow rate and the crystal growth temperature. Finally, we obtained high-quality InP/ZnS QDs in colors from bluish green to red, and we demonstrated that these core/shell QDs could be incorporated into white-light-emitting diode (LED) devices to improve color rendering performance.

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

NASA Astrophysics Data System (ADS)

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.

2017-05-01

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.

Highly stable red-emitting polymer dots for cellular imaging

NASA Astrophysics Data System (ADS)

Chelora, Jipsa; Zhang, Jinfeng; Chen, Rui; Thachoth Chandran, Hrisheekesh; Lee, Chun-Sing

2017-07-01

Polymer dots (Pdots) have emerged as a new type of fluorescent probe material for biomedical applications and have attracted great interest due to their excellent optical properties and biocompatability. In this work, we report on a red-emitting P3HT Pdot fluorescent probe for intracellular bioimaging. The as-prepared Pdot fluorescent probe exhibits good stability and has a large Stokes shift (121 nm) compared to molecules in tetrahydrofuran (THF). Furthermore, the probe shows low cytotoxicity, broad absorption spectrum, resistance against photodegradation, and good water dispersibility. These advantageous characteristics make P3HT Pdots a promising fluorescent probe material for bioimaging.

Highly stable red-emitting polymer dots for cellular imaging.

PubMed

Chelora, Jipsa; Zhang, Jinfeng; Chen, Rui; Chandran, Hrisheekesh Thachoth; Lee, Chun-Sing

2017-07-14

Polymer dots (Pdots) have emerged as a new type of fluorescent probe material for biomedical applications and have attracted great interest due to their excellent optical properties and biocompatability. In this work, we report on a red-emitting P 3 HT Pdot fluorescent probe for intracellular bioimaging. The as-prepared Pdot fluorescent probe exhibits good stability and has a large Stokes shift (121 nm) compared to molecules in tetrahydrofuran (THF). Furthermore, the probe shows low cytotoxicity, broad absorption spectrum, resistance against photodegradation, and good water dispersibility. These advantageous characteristics make P 3 HT Pdots a promising fluorescent probe material for bioimaging.

High efficiency light source using solid-state emitter and down-conversion material

DOEpatents

Narendran, Nadarajah; Gu, Yimin; Freyssinier, Jean Paul

2010-10-26

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Detection of CdSe quantum dot photoluminescence for security label on paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok; Bilqis, Ratu

CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program tomore » reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.« less

Solid-state, ambient-operation thermally activated delayed fluorescence from flexible, non-toxic gold-nanocluster thin films: towards the development of biocompatible light-emitting devices

NASA Astrophysics Data System (ADS)

Talite, M. J. A.; Lin, H. T.; Jiang, Z. C.; Lin, T. N.; Huang, H. Y.; Heredia, E.; Flores, A.; Chao, Y. C.; Shen, J. L.; Lin, C. A. J.; Yuan, C. T.

2016-08-01

Luminescent gold nanoclusters (AuNCs) with good biocompatibility have gained much attention in bio-photonics. In addition, they also exhibit a unique photo-physical property, namely thermally activated delayed fluorescence (TADF), by which both singlet and triplet excitons can be harvested. The combination of their non-toxic material property and unique TADF behavior makes AuNCs biocompatible nano-emitters for bio-related light-emitting devices. Unfortunately, the TADF emission is quenched when colloidal AuNCs are transferred to solid states under ambient environment. Here, a facile, low-cost and effective method was used to generate efficient and stable TADF emissions from solid AuNCs under ambient environment using polyvinyl alcohol as a solid matrix. To unravel the underlying mechanism, temperature-dependent static and transient photoluminescence measurements were performed and we found that two factors are crucial for solid TADF emission: small energy splitting between singlet and triplet states and the stabilization of the triplet states. Solid TADF films were also deposited on the flexible plastic substrate with patterned structures, thus mitigating the waveguide-mode losses. In addition, we also demonstrated that warm white light can be generated based on a co-doped single emissive layer, consisting of non-toxic, solution-processed TADF AuNCs and fluorescent carbon dots under UV excitation.

Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles

PubMed Central

Tvrdy, Kevin; Frantsuzov, Pavel A.; Kamat, Prashant V.

2011-01-01

Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO2, TiO2, and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO2) were not the same as those which showed the highest photocurrent (TiO2). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency. PMID:21149685

Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles.

PubMed

Tvrdy, Kevin; Frantsuzov, Pavel A; Kamat, Prashant V

2011-01-04

Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO(2), TiO(2), and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO(2)) were not the same as those which showed the highest photocurrent (TiO(2)). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency.

Fluorescent carbon dots: facile synthesis at room temperature and its application for Fe2+ sensing

NASA Astrophysics Data System (ADS)

Xiao, Sai Jin; Chu, Zhao Jun; Zuo, Jun; Zhao, Xiao Jing; Huang, Cheng Zhi; Zhang, Li

2017-02-01

A new route for one-pot preparation of carbon dots (CDs) was developed at room temperature using PEG400 as both the carbon source and passitive agent. The new method possesses the advantages of facile, rapid, energy-saving, without any external stimulus and environment friendly. By changing the content of NaOH, the PEG400-CDs with blue-emitting, yellow-emitting, orange red-emitting and red-emitting were obtained, and the formation mechanism were carefully investigated. In addition, a sensitive fluorescence sensor were developed for Fe2+ detection based on PEG400-CDs since the fluorescence of PEG400-CDs could be enhanced by Fe2+. It was found that there is a good linear relationship between the enhanced fluorescence and Fe2+ concentration in the range of 0.5 to 2.0 μmol·L-1 with the detection limit of 6.0 × 10-8 mol·L-1, and Fe2+ in water samples was also determined with high accuracy and repeatability.

Plasmon-resonance-enhanced visible-light photocatalytic activity of Ag quantum dots/TiO2 microspheres for methyl orange degradation

NASA Astrophysics Data System (ADS)

Yu, Xin; Shang, Liwei; Wang, Dongjun; An, Li; Li, Zhonghua; Liu, Jiawen; Shen, Jun

2018-06-01

We successfully prepared Ag quantum dots modified TiO2 microspheres by facile solvothermal and calcination method. The as-prepared Ag quantum dots/TiO2 microspheres were characterized by scanning electron microscope, transmission electron microscope, X-ray diffraction, X-ray photoelectron spectroscopy and UV-vis diffuse reflectance spectroscopy. The Ag quantum dots/TiO2 photocatalyst showed excellent visible light absorption and efficient photocatalytic activity for methyl orange degradation. And the sample with the molar ratio of 0.05 (Ag to Ti) showed the best visible light photocatalytic activity for methyl orange degradation, mainly because of the surface plasmon resonance (SPR) effects of Ag quantum dots to generate electron and hole pairs for enhanced visible light photocatalysis. Finally, possible visible light photocatalytic mechanism of Ag quantum dots/TiO2 microspheres for methyl orange degradation was proposed in detail.

Fabrication of three dimensional patterns of wide dimensional range using microbes and their applications

PubMed Central

Mehta, Sunita; Murugeson, Saravanan; Prakash, Balaji; Deepak

2015-01-01

Inspired by the wound healing property of certain trees, we report a novel microbes based additive process for producing three dimensional patterns, which has a potential of engineering applications in a variety of fields. Imposing a two dimensional pattern of microbes on a gel media and allowing them to grow in the third dimension is known from its use in biological studies. Instead, we have introduced an intermediate porous substrate between the gel media and the microbial growth, which enables three dimensional patterns in specific forms that can be lifted off and used in engineering applications. In order to demonstrate the applicability of this idea in a diverse set of areas, two applications are selected. In one, using this method of microbial growth, we have fabricated microlenses for enhanced light extraction in organic light emitting diodes, where densely packed microlenses of the diameters of hundreds of microns lead to luminance increase by a factor of 1.24X. In another entirely different type of application, braille text patterns are prepared on a normal office paper where the grown microbial colonies serve as braille tactile dots. Braille dot patterns thus prepared meet the standard specifications (size and spacing) for braille books. PMID:26486847

Laser-Induced-Fluorescence Photogrammetry and Videogrammetry

NASA Technical Reports Server (NTRS)

Danehy, Paul; Jones, Tom; Connell, John; Belvin, Keith; Watson, Kent

2004-01-01

An improved method of dot-projection photogrammetry and an extension of the method to encompass dot-projection videogrammetry overcome some deficiencies of dot-projection photogrammetry as previously practiced. The improved method makes it possible to perform dot-projection photogrammetry or videogrammetry on targets that have previously not been amenable to dot-projection photogrammetry because they do not scatter enough light. Such targets include ones that are transparent, specularly reflective, or dark. In standard dot-projection photogrammetry, multiple beams of white light are projected onto the surface of an object of interest (denoted the target) to form a known pattern of bright dots. The illuminated surface is imaged in one or more cameras oriented at a nonzero angle or angles with respect to a central axis of the illuminating beams. The locations of the dots in the image(s) contain stereoscopic information on the locations of the dots, and, hence, on the location, shape, and orientation of the illuminated surface of the target. The images are digitized and processed to extract this information. Hardware and software to implement standard dot-projection photogrammetry are commercially available. Success in dot-projection photogrammetry depends on achieving sufficient signal-to-noise ratios: that is, it depends on scattering of enough light by the target so that the dots as imaged in the camera(s) stand out clearly against the ambient-illumination component of the image of the target. In one technique used previously to increase the signal-to-noise ratio, the target is illuminated by intense, pulsed laser light and the light entering the camera(s) is band-pass filtered at the laser wavelength. Unfortunately, speckle caused by the coherence of the laser light engenders apparent movement in the projected dots, thereby giving rise to errors in the measurement of the centroids of the dots and corresponding errors in the computed shape and location of the surface of the target. The improved method is denoted laser-induced-fluorescence photogrammetry.

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belhadj, T.; Amand, T.; Kunz, S.

2010-08-02

We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k{center_dot}p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

Liquid nitrogen-assisted synthesis of fluorescent carbon dots from Blueberry and their performance in Fe3+ detection

NASA Astrophysics Data System (ADS)

Aslandaş, Ayşe Merve; Balcı, Neslihan; Arık, Mustafa; Şakiroğlu, Halis; Onganer, Yavuz; Meral, Kadem

2015-11-01

Fluorescent carbon dots (C-dots) were synthesized by a facile method containing liquid N2 treatment and centrifuge processes. The photophysical properties of the C-dots in an aqueous solution were examined at various conditions such as concentration, temperature, pH and excitation wavelength by using UV-vis absorption, fluorescence and time-resolved fluorescence spectroscopies. The C-dots emitted a broad fluorescence between approximately 350-550 nm and their fluorescence was tuned by changing excitation wavelength. The as-prepared C-dots were applied to Fe3+ detection from aqueous solution. Spectroscopic data revealed that the as-prepared C-dots were used to detect Fe3+ in the range of 12.5 μM to 100 μM as a fluorescence sensor.

Energy structure and radiative lifetimes of InxGa1-xN /AlN quantum dots

NASA Astrophysics Data System (ADS)

Aleksandrov, Ivan A.; Zhuravlev, Konstantin S.

2018-01-01

We report calculations of the ground state transition energies and the radiative lifetimes in InxGa1-xN /AlN quantum dots with different size and indium content. The ground state transition energy and the radiative lifetime of the InxGa1-xN /AlN quantum dots can be varied over a wide range by changing the height of the quantum dot and the indium content. The sizes and compositions for quantum dots emitting in the wavelength range for fiber-optic telecommunications have been found. The radiative lifetime of the InxGa1-xN /AlN quantum dots increases with increase in quantum dot height at a constant indium content, and increases with increase in indium content at constant quantum dot height. For quantum dots with constant ground state transition energy the radiative lifetime decreases with increase in indium content.

Magnetically-assembled micro/mesopixels exhibiting light intensity enhancement in the (012) planes of fish guanine crystals

NASA Astrophysics Data System (ADS)

Chikashige, T.; Iwasaka, M.

2018-05-01

In this study, a new method was investigated to form light-reflecting dots at the micrometer scale using the magnetic orientations of biogenic guanine crystals obtained from fish skin and scales. The crystal platelets, possessing average dimensions of 5 μm×20 μm×100 nm, were dispersed in water and observed during exposure to vertical magnetic fields up to 5 T. The magnetic field direction was parallel to Earth's gravity, and allowed the narrowest edges of the crystals to be observed at the micrometer scale for the first time. The magnetic orientation process was initiated under conditions where the crystal platelets in water were laid on a glass substrate or where the platelets had random orientations. In the former case, the crystal platelets followed a two-stage magnetic orientation process where, in the first step, the platelet widths were aligned in the magnetic field direction. The second step required rotation of the ˜20-μm-long plates with respect to the Earth's gravity, where application of a 5 T magnetic field enabled their orientation. Real-time images of the magnetically aligning platelets provided new evidence that the crystal platelets also emitted reflected light from a very narrow window at two crystal planes (i.e., (0 1 ¯ 2 ¯ ) and (0 1 ¯ 2 )). In the latter case with random platelet orientation, spatially-condensed light-reflecting dots appeared while the guanine crystal platelets were floating and maintaining their orientation. The technique developed for controlling light-reflecting microscale objects in an aqueous medium can be applied to produce a type of microfluidic optical tool.

CdSe white quantum dots-based white light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Su, Yu-Sheng; Hsiao, Chih-Chun; Chung, Shu-Ru

2016-09-01

A white light emission CdSe quantum dots (QDs) can be prepared by chemical route under 180°C. An organic oleic acid (OA) is used to react with CdO to form Cd-OA complex. Hexadecylamine (HDA) and 1-Octadecene (ODE) were used as co-surfactants. By controlling the reaction time, a white light emission CdSe QDs can be obtained after reacts for 3 to 10 min. The luminescence spectra compose two obvious emission peaks and entire visible light ranges from 400 to 650 nm. Based on TEM measurement result, spherical morphologies with particle size 2.39+/-0.27 nm can be obtained. The quantum yields (QYs) of white CdSe QD are between 20 and 60 %, which depends on reaction time. A white CdSe QDs were mixed with UV cured gel (OPAS-226) with weight ratios 50.0 wt. %, and putted the mixture into reflective cup (3020, 13 mil) as convert type. The white LEDs have controllable CIE coordinates and correlated color temperature (CCT). The luminous efficacy of the device is less than 3 lm/W, but the color rendering index (CRI) for all devices are higher than 80. Since the luminous efficacy of hybrid devices has a direct dependence on the external QY of the UV-LED as well, the luminous efficacy can be improved by well dispersion of CdSe QDs in UV gel matrix and using optimized LED chips. Therefore, in this study, we provide a new and simple method to prepare high QY of white CdSe QDs and its have a potential to applicate in solid-state lighting.

1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report a room temperature optically pumped Quantum Dot-based Spin-Vertical-External-Cavity Surface-Emitting laser (QD Spin-VECSEL) operating at the telecom wavelength of 1.3 μm. The active medium was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Circularly polarized lasing in the QD-VECSEL under Continuous-Wave optical pumping has been realized with a threshold pump power of 11 mW. We further demonstrate at room temperature control of the QD-VECSEL output polarization ellipticity via the pump polarization.

Development of Technologies for Early Detection and Stratification of Breast Cancer

DTIC Science & Technology

2016-12-01

heterogeneous nature of these cells. Figure 17 shows a yellow emitting Pdot (semiconducting polymer dot), which is a new family of ultra-bright fluorescent...Yu, J., Zhang, X., Sun, W., Ye, F., Wu, I., Zhang, Y., Hayden, S., Zhang, Y., Wu, C., Chiu, D.T. "New yellow fluorescent semiconducting polymer dots...fluorescent fluorinated semiconducting polymer dots for cellular imaging and analysis" Chemical Communication, 2013, 49, 8256-8258. • Zhao, M., Wei, B

Non-contact pumping of light emitters via non-radiative energy transfer

DOEpatents

Klimov, Victor I.; Achermann, Marc

2010-01-05

A light emitting device is disclosed including a primary light source having a defined emission photon energy output, and, a light emitting material situated near to said primary light source, said light emitting material having an absorption onset equal to or less in photon energy than the emission photon energy output of the primary light source whereby non-radiative energy transfer from said primary light source to said light emitting material can occur yielding light emission from said light emitting material.

Three-dimensional spatial localization of thin fluorophore-filled capillaries in thick scattering media

NASA Astrophysics Data System (ADS)

Desrochers, Johanne; Vermette, Patrick; Fontaine, Réjean; Bérubé-Lauzière, Yves

2008-06-01

Fluorescence optical diffuse tomography (fDOT) is of much interest in molecular imaging to retrieve information from fluorescence signals emitted from specifically targeted bioprocesses deep within living tissues. An exciting application of fDOT is in the growing field of tissue engineering, where 3D non-invasive imaging techniques are required to ultimately grow 3D engineered tissues. Via appropriate labelling strategies and fluorescent probes, fDOT has the potential to monitor culture environment and cells viability non-destructively directly within the bioreactor environment where tissues are to be grown. Our ultimate objective is to image the formation of blood vessels in bioreactor conditions. Herein, we use a non-contact setup for small animal fDOT imaging designed for 3D light collection around the sample. We previously presented a time of flight approach using a numerical constant fraction discrimination technique to assign an early photons arrival time to every fluorescence time point-spread function collected around the sample. Towards bioreactor in-situ imaging, we have shown the capability of our approach to localize a fluorophore-filled 500 μm capillary immersed coaxially in a cylindrically shaped bioreactor phantom containing an absorbing/scattering medium representative of experiments on real tissue cultures. Here, we go one step further, and present results for the 3D localization of thinner indocyanine green labelled capillaries (250 μm and 360 μm inner diameter) immersed in the same phantom conditions and geometry but with different spatial configurations (10° and 30° capillary inclination).

Photon-induced formation of CdS nanocrystals in selected areas of polymer matrices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Athanassiou, Athanassia; Cingolani, Roberto; Tsiranidou, Elsa

2007-10-08

We demonstrate light-induced formation of semiconductor quantum dots in TOPAS registered polymer matrix with very high control of their size and their spatial localization. Irradiation with UV laser pulses of polymer films embedding Cd thiolate precursors results in the formation of cadmium sulfide nanocrystals well confined in the irradiation area, through a macroscopically nondestructive procedure for the host matrix. With increasing number of laser pulses, we accomplish the formation of nanoparticles with gradually increasing dimensions, resulting in the dynamic change of the spectra emitted by the formed nanocomposite areas. The findings are supported by x-ray diffraction and transmission electron microscopymore » measurements.« less

Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth.

PubMed

Lim, Kipil; Jang, Ho Seong; Woo, Kyoungja

2012-12-07

Blue (<480 nm) emitting Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been challenging. Here we present blue emitting InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs.

Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth

NASA Astrophysics Data System (ADS)

Lim, Kipil; Jang, Ho Seong; Woo, Kyoungja

2012-12-01

Blue (<480 nm) emitting Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been challenging. Here we present blue emitting InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs.

A Web-Based Framework For a Time-Domain Warehouse

NASA Astrophysics Data System (ADS)

Brewer, J. M.; Bloom, J. S.; Kennedy, R.; Starr, D. L.

2009-09-01

The Berkeley Transients Classification Pipeline (TCP) uses a machine-learning classifier to automatically categorize transients from large data torrents and provide automated notification of astronomical events of scientific interest. As part of the training process, we created a large warehouse of light-curve sources with well-labelled classes that serve as priors to the classification engine. This web-based interactive framework, which we are now making public via DotAstro.org (http://dotastro.org/), allows us to ingest time-variable source data in a wide variety of formats and store it in a common internal data model. Data is passed between pipeline modules in a prototype XML representation of time-series format (VOTimeseries), which can also be emitted to collaborators through dotastro.org. After import, the sources can be visualized using Google Sky, light curves can be inspected interactively, and classifications can be manually adjusted.

Long lifetime near-infrared-emitting quantum dots for time-gated in vivo imaging of rare circulating cells (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fragola, Alexandra; Bouccara, Sophie; Pezet, Sophie; Lequeux, Nicolas; Loriette, Vincent; Pons, Thomas

2017-02-01

The in vivo detection of rare circulating cells using non invasive fluorescence imaging would provide a key tool to study migration of eg. tumoral or immunological cells. Fluorescence detection is however currently limited by a lack of contrast between the small emission of isolated, fast circulating cells and the strong autofluorescence background of the surrounding tissues. We present the development of near infrared emitting quantum dots (NIR-QDs) with long fluorescence lifetime for sensitive time-gated in vivo imaging of circulating cells. These QDs are composed of low toxicity ZnCuInSe/ZnS materials and made biocompatible using a novel multidentate imidazole zwitterionic block copolymer, ensuring their long term intracellular stability. Cells of interest can thus be labeled ex vivo with QDs, injected intravenously and imaged in the near infrared range. Excitation using a pulsed laser coupled to time-gated detection enables the efficient rejection of short lifetime (≈ ns) autofluorescence background and detection of long lifetime (≈ 150 ns) fluorescence from QD-labeled cells. We demonstrate efficient in vivo imaging of single fast-flowing cells, which opens opportunities for future biological studies. [1] M. Tasso et al, "Sulfobetaine-Vinylimidazole block copolymers: a robust quantum dot surface chemistry expanding bioimaging's horizons", ACS Nano, 9(11), 2015 [2] S. Bouccara et al, "Time-gated cell imaging using long lifetime near-infrared-emitting quantum dots for autofluorescence rejection", J Biomed Optc, 19(5), 2014

Investigations into the formation of nanocrystalline quantum dot thin films by mist deposition process

NASA Astrophysics Data System (ADS)

Kshirsagar, Aditya

Semiconductor nanocrystalline quantum dots (NQDs) have material properties remarkably different compared to bulk semiconductors with the same material composition. These NQDs have various novel applications in the electronic and photonic industry, such as light emitting diodes (LEDs) and flat-panel displays. In these applications, ultra-thin films of NQDs in the monolayer regime are needed to ensure optimal current transport properties and device efficiency. There is ongoing search to find a suitable method to deposit and pattern such ultra-thin films of quantum dots with few monolayer thicknesses. Several competing approaches are available, each with its pros and cons. This study explores mist deposition as the technique to fill this void. In this study, ultra-thin films of quantum dots are deposited on diverse substrates and are characterized to understand the mechanics of mist deposition. Various applications of blanket deposited and patterned quantum dot films are studied. The results discussed here include atomic force microscopy analysis of the films to study surface morphology, fluorescence microscopy to study light emission and optical microscope images to study patterning techniques. These results demonstrate the ability of mist deposition to form 1-4 monolayers thick, uniform, defect-free patterned films with root mean square (RMS) surface roughness less than 2 nm. LEDs fabricated using mist deposition show a peak luminescence greater than 500 cd/m2 for matched red, yellow and green devices using Alq3 as the electron transport layer, and over 9000 cd/m2 for red devices using ZnO as the electron transport layer, respectively. In addition to the experimental approach to study the process and explore potential applications, simulation and modeling are carried out to understand the various aspects of mist deposition. A mathematical model is presented which discusses the atomization process of the precursor solution, the physics involved during the deposition process, and the mechanics of film formation. Results of film morphology simulation using Monte Carlo techniques and process simulation using multi-physics approach are discussed. Problems in pattern transfer due to electrostatic effects when using shadow masks are presented in a separate chapter.

Combinational light emitting diode-high frequency focused ultrasound treatment for HeLa cell.

PubMed

Choe, Se-Woon; Park, Kitae; Park, Chulwoo; Ryu, Jaemyung; Choi, Hojong

2017-12-01

Light sources such as laser and light emitting diode or ultrasound devices have been widely used for cancer therapy and regenerative medicines, since they are more cost-effective and less harmful than radiation therapy, chemotherapy or magnetic treatment. Compared to laser and low intensity ultrasound techniques, light emitting diode and high frequency focused ultrasound shows enhanced therapeutic effects, especially for small tumors. We propose combinational light emitting diode-high frequency focused ultrasound treatment for human cervical cancer HeLa cells. Individual red, green, and blue light emitting diode light only, high frequency focused ultrasound only, or light emitting diode light combined with high frequency focused ultrasound treatments were applied in order to characterize the responses of HeLa cells. Cell density exposed by blue light emitting diode light combined with high frequency focused ultrasound (2.19 ± 0.58%) was much lower than that of cells exposed by red and green light emitting diode lights (81.71 ± 9.92% and 61.81 ± 4.09%), blue light emitting diode light (11.19 ± 2.51%) or high frequency focused ultrasound only (9.72 ± 1.04%). We believe that the proposed combinational blue light emitting diode-high frequency focused ultrasound treatment could have therapeutic benefits to alleviate cancer cell proliferation.

ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Miin-Jang; Yang, Jer-Ren; Shiojiri, Makoto

2012-07-01

We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.

Colour gamut enhancement with remote light conversion mechanism

NASA Astrophysics Data System (ADS)

Koseoglu, D.; Sezer, Y. S.; Karsli, K.

2018-01-01

The backlight unit spectrum of liquid crystal displays (LCD) directly affects the colour gamut. With the invention of GaN based blue light emitting diodes (LED), phosphors and quantum dots (QD) have gained considerable scientific interest due to their broad range of applications especially in lighting and display technologies. These phosphors and QDs are used to convert the blue light of the LEDs into white in general lighting. On the other hand, in display systems, they are used to generate red and green bands. There are different application methods such as on-chip and remote configurations. In this study, we concentrate on remote phosphor and QD backlight configurations where the light conversion is done away from the chips. In our display designs, we used GaN based blue LED lateral chips as an excitation source, on the other hand, light conversion layers were placed in backlight units as a thin film for the emission of green and red bands. The mixing ratios of these composite layers were arranged to match the emission spectrum of the blue LEDs and the light conversion layer to the colour filters of the LCD, so that the green, blue, and red bands efficiently widens the colour space. The results were also compared with the on-chip phosphor arrangements.

Assessment of Anisotropic Semiconductor Nanorod and Nanoplatelet Heterostructures with Polarized Emission for Liquid Crystal Display Technology.

PubMed

Cunningham, Patrick D; Souza, João B; Fedin, Igor; She, Chunxing; Lee, Byeongdu; Talapin, Dmitri V

2016-06-28

Semiconductor nanorods can emit linear-polarized light at efficiencies over 80%. Polarization of light in these systems, confirmed through single-rod spectroscopy, can be explained on the basis of the anisotropy of the transition dipole moment and dielectric confinement effects. Here we report emission polarization in macroscopic semiconductor-polymer composite films containing CdSe/CdS nanorods and colloidal CdSe nanoplatelets. Anisotropic nanocrystals dispersed in polymer films of poly butyl-co-isobutyl methacrylate (PBiBMA) can be stretched mechanically in order to obtain unidirectionally aligned arrays. A high degree of alignment, corresponding to an orientation factor of 0.87, was achieved and large areas demonstrated polarized emission, with the contrast ratio I∥/I⊥ = 5.6, making these films viable candidates for use in liquid crystal display (LCD) devices. To some surprise, we observed significant optical anisotropy and emission polarization for 2D CdSe nanoplatelets with the electronic structure of quantum wells. The aligned nanorod arrays serve as optical funnels, absorbing unpolarized light and re-emitting light from deep-green to red with quantum efficiencies over 90% and high degree of linear polarization. Our results conclusively demonstrate the benefits of anisotropic nanostructures for LCD backlighting. The polymer films with aligned CdSe/CdS dot-in-rod and rod-in-rod nanostructures show more than 2-fold enhancement of brightness compared to the emitter layers with randomly oriented nanostructures. This effect can be explained as the combination of linearly polarized luminescence and directional emission from individual nanostructures.

Purcell effect in triangular plasmonic nanopatch antennas with three-layer colloidal quantum dots

NASA Astrophysics Data System (ADS)

Eliseev, S. P.; Kurochkin, N. S.; Vergeles, S. S.; Sychev, V. V.; Chubich, D. A.; Argyrakis, P.; Kolymagin, D. A.; Vitukhnovskii, A. G.

2017-05-01

A model describing a plasmonic nanopatch antenna based on triangular silver nanoprisms and multilayer cadmium chalcogenide quantum dots is introduced. Electromagnetic-field distributions in nanopatch antennas with different orientations of the quantum-dot dipoles are calculated for the first time with the finite element method for numerical electrodynamics simulations. The energy flux through the surface of an emitting quantum dot is calculated for the configurations with the dot in free space, on an aluminum substrate, and in a nanopatch antenna. It is shown that the radiative part of the Purcell factor is as large as 1.7 × 102 The calculated photoluminescence lifetimes of a CdSe/CdS/ZnS colloidal quantum dot in a nanopatch antenna based on a silver nanoprism agree well with the experimental results.

White light-emitting organic electroluminescent devices

DOEpatents

Shiang, Joseph John; Duggal, Anil Raj; Parthasarathy, Gautam

2006-06-20

A light-emitting device comprises a light-emitting member, which comprises two electrodes, at least two organic electroluminescent ("EL") materials disposed between the electrodes, a charge blocking material disposed between the electrodes, and at least one photoluminescent ("PL") material. The light-emitting member emits electromagnetic ("EM") radiation having a first spectrum in response to a voltage applied across the two electrodes. The PL material absorbs a portion of the EM radiation emitted by the light-emitting member and emits EM radiation having second spectrum different than the first spectrum. Each of the organic EL materials emits EM radiation having a wavelength range selected from the group consisting of blue and red wavelength ranges.

Large-area (over 50 cm × 50 cm) freestanding films of colloidal InP/ZnS quantum dots.

PubMed

Mutlugun, Evren; Hernandez-Martinez, Pedro Ludwig; Eroglu, Cuneyt; Coskun, Yasemin; Erdem, Talha; Sharma, Vijay K; Unal, Emre; Panda, Subhendu K; Hickey, Stephen G; Gaponik, Nikolai; Eychmüller, Alexander; Demir, Hilmi Volkan

2012-08-08

We propose and demonstrate the fabrication of flexible, freestanding films of InP/ZnS quantum dots (QDs) using fatty acid ligands across very large areas (greater than 50 cm × 50 cm), which have been developed for remote phosphor applications in solid-state lighting. Embedded in a poly(methyl methacrylate) matrix, although the formation of stand-alone films using other QDs commonly capped with trioctylphosphine oxide (TOPO) and oleic acid is not efficient, employing myristic acid as ligand in the synthesis of these QDs, which imparts a strongly hydrophobic character to the thin film, enables film formation and ease of removal even on surprisingly large areas, thereby avoiding the need for ligand exchange. When pumped by a blue LED, these Cd-free QD films allow for high color rendering, warm white light generation with a color rendering index of 89.30 and a correlated color temperature of 2298 K. In the composite film, the temperature-dependent emission kinetics and energy transfer dynamics among different-sized InP/ZnS QDs are investigated and a model is proposed. High levels of energy transfer efficiency (up to 80%) and strong donor lifetime modification (from 18 to 4 ns) are achieved. The suppression of the nonradiative channels is observed when the hybrid film is cooled to cryogenic temperatures. The lifetime changes of the donor and acceptor InP/ZnS QDs in the film as a result of the energy transfer are explained well by our theoretical model based on the exciton-exciton interactions among the dots and are in excellent agreement with the experimental results. The understanding of these excitonic interactions is essential to facilitate improvements in the fabrication of photometrically high quality nanophosphors. The ability to make such large-area, flexible, freestanding Cd-free QD films pave the way for environmentally friendly phosphor applications including flexible, surface-emitting light engines.

Light collection optics for measuring flux and spectrum from light-emitting devices

DOEpatents

McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

2016-05-24

Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

Recent advances in conjugated polymers for light emitting devices.

PubMed

Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

Recent Advances in Conjugated Polymers for Light Emitting Devices

PubMed Central

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

NASA Astrophysics Data System (ADS)

Nötzel, Richard

2009-07-01

This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

Aperture lamp

DOEpatents

MacLennan, Donald A.; Turner, Brian P.

2003-01-01

A discharge lamp includes means for containing a light emitting fill, the fill being capable of absorbing light at one wavelength and re-emitting the light at a different wavelength, the light emitted from the fill having a first spectral power distribution in the absence of reflection of light back into the fill; means for exciting the fill to cause the fill to emit light; and means for reflecting some of the light emitted by the fill back into the fill while allowing some light to exit, the exiting light having a second spectral power distribution with proportionately more light in the visible region as compared to the first spectral power distribution, wherein the light re-emitted by the fill is shifted in wavelength with respect to the absorbed light and the magnitude of the shift is in relation to an effective optical path length. Another discharge lamp includes an envelope; a fill which emits light when excited disposed in the envelope; a source of excitation power coupled to the fill to excite the fill and cause the fill to emit light; and a reflective ceramic structure disposed around the envelope and defining an light emitting opening, wherein the structure comprises a sintered body built up directly on the envelope and made from a combination of alumina and silica.

Wyoming Wildfire Spotted by NASA Spacecraft

NASA Image and Video Library

2016-07-28

The blue dots in this field of galaxies, known as the COSMOS field, show galaxies that contain supermassive black holes emitting high-energy X-rays. The black holes were detected by NASA's Nuclear Spectroscopic Array, or NuSTAR, which spotted 32 such black holes in this field and has observed hundreds across the whole sky so far. The other colored dots are galaxies that host black holes emitting lower-energy X-rays, and were spotted by NASA's Chandra X-ray Observatory. Chandra data show X-rays with energies between 0.5 to 7 kiloelectron volts, while NuSTAR data show X-rays between 8 to 24 kiloelectron volts. http://photojournal.jpl.nasa.gov/catalog/PIA20865

A Black Hole Choir.

NASA Image and Video Library

2016-07-28

The blue dots in this field of galaxies, known as the COSMOS field, show galaxies that contain supermassive black holes emitting high-energy X-rays. The black holes were detected by NASA's Nuclear Spectroscopic Array, or NuSTAR, which spotted 32 such black holes in this field and has observed hundreds across the whole sky so far. The other colored dots are galaxies that host black holes emitting lower-energy X-rays, and were spotted by NASA's Chandra X-ray Observatory. Chandra data show X-rays with energies between 0.5 to 7 kiloelectron volts, while NuSTAR data show X-rays between 8 to 24 kiloelectron volts. http://photojournal.jpl.nasa.gov/catalog/PIA20865

Dielectric impedance and optical performance of quantum dots doped OLEDs

NASA Astrophysics Data System (ADS)

Jobin, Marc; Pellodi, Cédric; Emmenegger, Nicolas

2016-04-01

We investigate the effect of the incorporation of CdSe quantum dots (QD) in the standard ITO/TPD/Alq3/Al organic light emitting diodes (OLED's). The OLED's structures have been prepared in a double glove box coupled to a vacuum chamber containing both low and high temperature evaporators. For the standard (undoped) OLED's, the hole transport layer (HTL) consisting of 50nm of TPD is deposited by spin coating (8000rpm during 60 sec) and the 40nm of Alq3 were deposited at 2A/sec (organic crucible Radak-I). 150nm of Al were finally evaporated at 5A/s. For the CdSe-doped OLED's, the procedure was the same expect that the QD's were mixed with TPD in toluene before spin coating. During the thermal processing if the film, the QD's are expected to segregate to the surface, and then will be located at the TPD/Alq3 interface. The various layers were imaged by Atomic Force Microscopy (AFM) at each phase of the structure deposition, and we could indeed visualize the segregated QD's above the TPD film. AFM was systematically used to monitor the homogeneity and the thickness of the various films. The impedance of the non-encapsulated films structures were measured in air in the 40-40MHz frequency range, with bias at 0V (non-emitting), 2V (low emission) and 8V (strong emission). The corresponding dielectric spectra were analyzed with the standard Havriliak-Negami (HV) formula, where the conductive term has been subtracted from the data in case of light emission. We have measured a relaxation ranging from 100kHZ for the unbiased structure to 1MHz for 8V (strong emission). Apart from this expected relaxation, we found a second relaxation mechanism around 10 MHz. The origin of this second peak will be discussed. To monitor the optical emission of the OLED's, we have built a specific bench which allows for the quantitative measurement of the emission spectra and the dynamics behavior of the OLED's (raising and falling time). We found that the incorporation of the QD's unfortunately results in the decrease of the light emission but with a favorable modification of the light spectrum (around 700nm).

Quantum dot enabled detection of Escherichia coli using a cell-phone†

PubMed Central

Zhu, Hongying; Sikora, Uzair; Ozcan, Aydogan

2013-01-01

We report a cell-phone based Escherichia coli (E. coli) detection platform for screening of liquid samples. In this compact and cost-effective design attached to a cell-phone, we utilize anti-E. coli O157:H7 antibody functionalized glass capillaries as solid substrates to perform a quantum dot based sandwich assay for specific detection of E. coli O157:H7 in liquid samples. Using battery-powered inexpensive light-emitting-diodes (LEDs) we excite/pump these labelled E. coli particles captured on the capillary surface, where the emission from the quantum dots is then imaged using the cell-phone camera unit through an additional lens that is inserted between the capillary and the cell-phone. By quantifying the fluorescent light emission from each capillary tube, the concentration of E. coli in the sample is determined. We experimentally confirmed the detection limit of this cell-phone based fluorescent imaging and sensing platform as ~5 to 10 cfu mL−1 in buffer solution. We also tested the specificity of this E. coli detection platform by spiking samples with different species (e.g., Salmonella) to confirm that non-specific binding/detection is negligible. We further demonstrated the proof-of-concept of our approach in a complex food matrix, e.g., fat-free milk, where a similar detection limit of ~5 to 10 cfu mL−1 was achieved despite challenges associated with the density of proteins that exist in milk. Our results reveal the promising potential of this cell-phone enabled field-portable and cost-effective E. coli detection platform for e.g., screening of water and food samples even in resource limited environments. The presented platform can also be applicable to other pathogens of interest through the use of different antibodies. PMID:22396952

Quantum dot enabled detection of Escherichia coli using a cell-phone.

PubMed

Zhu, Hongying; Sikora, Uzair; Ozcan, Aydogan

2012-06-07

We report a cell-phone based Escherichia coli (E. coli) detection platform for screening of liquid samples. In this compact and cost-effective design attached to a cell-phone, we utilize anti-E. coli O157:H7 antibody functionalized glass capillaries as solid substrates to perform a quantum dot based sandwich assay for specific detection of E. coli O157:H7 in liquid samples. Using battery-powered inexpensive light-emitting-diodes (LEDs) we excite/pump these labelled E. coli particles captured on the capillary surface, where the emission from the quantum dots is then imaged using the cell-phone camera unit through an additional lens that is inserted between the capillary and the cell-phone. By quantifying the fluorescent light emission from each capillary tube, the concentration of E. coli in the sample is determined. We experimentally confirmed the detection limit of this cell-phone based fluorescent imaging and sensing platform as ∼5 to 10 cfu mL(-1) in buffer solution. We also tested the specificity of this E. coli detection platform by spiking samples with different species (e.g., Salmonella) to confirm that non-specific binding/detection is negligible. We further demonstrated the proof-of-concept of our approach in a complex food matrix, e.g., fat-free milk, where a similar detection limit of ∼5 to 10 cfu mL(-1) was achieved despite challenges associated with the density of proteins that exist in milk. Our results reveal the promising potential of this cell-phone enabled field-portable and cost-effective E. coli detection platform for e.g., screening of water and food samples even in resource limited environments. The presented platform can also be applicable to other pathogens of interest through the use of different antibodies.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

NASA Astrophysics Data System (ADS)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Bluish green emitting carbon quantum dots synthesized from jackfruit (Artocarpus heterophyllus) and its sensing applications of Hg (II) and Cr (VI) ions

NASA Astrophysics Data System (ADS)

Rajendran, Kalimuthu; Rajendiran, Nagappan

2018-02-01

A simple, economical, and green method for the preparation of water soluble, high fluorescent carbon quantum dots (CQDs) has been prepared via hydrothermal process using jackfruit (Artocarpus heterophyllus) as a carbon source. The optical properties of synthesized CQDs were characterized by UV- visible and fluorescence spectroscopy. Fourier transform infrared spectroscopy (FT-IR), x-ray Diffraction (XRD) and high resolution transmission electron microscopy (HR-TEM) techniques were used to study the composition and size of the CQDs. The prepared CQDs were spherical in shape with an average size of 2.5 nm along with uniform distribution and showed bright bluish green emission properties, without any further surface modification. The prepared CQDs were exhibit high stability at neutral pH and showed high photo-stability under UV light irradiation at 365 nm. The obtained CQDs were effectively utilized as fluorescent probe for highly selective and sensitive detection of Hg2+ and Cr6+ ions in environmental samples with a limit of detection of about 8 and 10 nM respectively.

Photo-induced interaction of thioglycolic acid (TGA)-capped CdTe quantum dots with cyanine dyes

NASA Astrophysics Data System (ADS)

Abdelbar, Mostafa F.; Fayed, Tarek A.; Meaz, Talaat M.; Ebeid, El-Zeiny M.

2016-11-01

The photo-induced interaction of three different sizes of thioglycolic acid (TGA)-capped CdTe quantum dots (CdTe QDs) with two monomethine cyanine dyes belonging to the thiazole orange (TO) family has been studied. Positively charged cyanines interact with QDs surface which is negatively charged due to capping agent carboxylate ions. The energy transfer parameters including Stern-Volmer constant, Ksv, number of binding sites, n, quenching sphere radius, r, the critical energy transfer distance, R0, and energy transfer efficiencies, E have been calculated. The effect of structure and the number of aggregating molecules have been studied as a function of CdTe QDs particle size. Combining organic and inorganic semiconductors leads to increase of the effective absorption cross section of the QDs which can be utilized in novel nanoscale designs for light-emitting, photovoltaic and sensor applications. A synthesized triplet emission of the studied dyes was observed using CdTe QDs as donors and this is expected to play a potential role in molecular oxygen sensitization and in photodynamic therapy (PDT) applications.

Ultrathin Quantum Dot Display Integrated with Wearable Electronics.

PubMed

Kim, Jaemin; Shim, Hyung Joon; Yang, Jiwoong; Choi, Moon Kee; Kim, Dong Chan; Kim, Junhee; Hyeon, Taeghwan; Kim, Dae-Hyeong

2017-10-01

An ultrathin skin-attachable display is a critical component for an information output port in next-generation wearable electronics. In this regard, quantum dot (QD) light-emitting diodes (QLEDs) offer unique and attractive characteristics for future displays, including high color purity with narrow bandwidths, high electroluminescence (EL) brightness at low operating voltages, and easy processability. Here, ultrathin QLED displays that utilize a passive matrix to address individual pixels are reported. The ultrathin thickness (≈5.5 µm) of the QLED display enables its conformal contact with the wearer's skin and prevents its failure under vigorous mechanical deformation. QDs with relatively thick shells are employed to improve EL characteristics (brightness up to 44 719 cd m -2 at 9 V, which is the record highest among wearable LEDs reported to date) by suppressing the nonradiative recombination. Various patterns, including letters, numbers, and symbols can be successfully visualized on the skin-mounted QLED display. Furthermore, the combination of the ultrathin QLED display with flexible driving circuits and wearable sensors results in a fully integrated QLED display that can directly show sensor data. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mo, Xiaoming; Long, Hao; Wang, Haoning

2014-08-11

We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emissionmore » at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.« less

Long-lived and Well-resolved Mn2+ Ion Emissions in CuInS-ZnS Quantum Dots

PubMed Central

Cao, Sheng; Li, Chengming; Wang, Lin; Shang, Minghui; Wei, Guodong; Zheng, Jinju; Yang, Weiyou

2014-01-01

CuInS2 (CIS) quantum dots (QDs) have tunable photoluminescence (PL) behaviors in the visible and near infrared spectral range with markedly lower toxicity than the cadmium-based counterparts, making them very promising applications in light emitting and solar harvesting. However, there still remain material- and fabrication- related obstacles in realizing the high-performance CIS-based QDs with well-resolved Mn2+ d-d emission, long emission lifetimes as well as high efficiencies. Here, we demonstrate the growth of high-quality Mn2+-doped CuInS-ZnS (CIS-ZnS) QDs based on a multi-step hot-injection strategy. The resultant QDs exhibit a well-resolved Mn2+ d-d emission with a high PL quantum yield (QY) up to 66% and an extremely long excited state lifetime up to ~3.78 ms, which is nearly two times longer than the longest one of “green” QDs ever reported. It is promising that the synthesized Mn2+-doped CIS-ZnS QDs might open new doors for their practical applications in bioimaging and opto/electronic devices. PMID:25515207

Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics.

PubMed

Tasco, Vittorianna; Usman, Muhammad; De Giorgi, Milena; Passaseo, Adriana

2014-02-07

Tailoring of electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how fine control of the strain-induced surface kinetics during the growth of vertically stacked multiple layers of QDs allows for the engineering of their self-organization process. Most noticeably, this study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping with a GaAs spacer. This leads to a drastic increase of the TM/TE polarization ratio of emitted light, not accessible from conventional growth parameters. Our detailed experimental measurements, supported by comprehensive multi-million atom simulations of strain, electronic and optical properties, provide in-depth analysis of the grown QD samples allowing us to give a clear picture of the atomic scale phenomena affecting the proposed growth dynamics and consequent QD polarization response.

Feasibility of interstitial diffuse optical tomography using cylindrical diffusing fiber for prostate PDT

PubMed Central

Liang, Xing; Wang, Ken Kang-Hsin; Zhu, Timothy C.

2013-01-01

Interstitial diffuse optical tomography (DOT) has been used to characterize spatial distribution of optical properties for prostate photodynamic therapy (PDT) dosimetry. We have developed an interstitial DOT method using cylindrical diffuse fibers (CDFs) as light sources, so that the same light sources can be used for both DOT measurement and PDT treatment. In this novel interstitial CDF-DOT method, absolute light fluence per source strength (in unit of 1/cm2) is used to separate absorption and scattering coefficients. A mathematical phantom and a solid prostate phantom including anomalies with known optical properties were used, respectively, to test the feasibility of reconstructing optical properties using interstitial CDF-DOT. Three dimension spatial distributions of the optical properties were reconstructed for both scenarios. Our studies show that absorption coefficient can be reliably extrapolated while there are some cross talks between absorption and scattering properties. Even with the suboptimal reduced scattering coefficients, the reconstructed light fluence rate agreed with the measured values to within ±10%, thus the proposed CDF-DOT allows greatly improved light dosimetry calculation for interstitial PDT. PMID:23629149

Ultrafast optical control of individual quantum dot spin qubits.

PubMed

De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa

2013-09-01

Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a 'flying' photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin-spin entanglement can be generated if each spin can emit a photon that is entangled with the spin, and these photons are then interfered. We review recent work demonstrating entanglement between a stationary spin qubit and a flying photonic qubit. These experiments utilize the polarization- and frequency-dependent spontaneous emission from the lowest charged exciton state to single spin Zeeman sublevels.

PREFACE: Quantum Dot 2010

NASA Astrophysics Data System (ADS)

Taylor, Robert A.

2010-09-01

These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur Zrenner (Paderborn University, Germany) International Programme Committee: Alexander Eychmüller (TU Dresden, Germany) Jonathan Finley (TU Munich, Germany) Dan Gammon (NRL, Washington, USA) Alexander Govorov (Ohio University, USA) Neil Greenham (Cavendish Laboratory, UK) Vladimir Korenev (Ioffe Institute, Russia) Leo Kouwenhoven (TU Delft, Netherlands) Wolfgang Langbein (Cardiff University, UK) Xavier Marie (CNRS Toulouse, France) David Ritchie (Cambridge, UK) Andrew Sachrajda (IMS, Ottawa, Canada) Katerina Soulantica (University of Toulouse, France) Seigo Tarucha (University of Tokyo, Japan) Carlos Tejedor (UAM, Madrid, Spain) Euijoon Yoon (Seoul National University, Korea) Ulrike Woggon (Tu Berlin, Germany) Proceedings edited and compiled by Profesor Robert A Taylor, University of Oxford

Interband emission energy in a dilute nitride quaternary semiconductor quantum dot for longer wavelength applications

NASA Astrophysics Data System (ADS)

Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo; Duque, C. A.

2016-07-01

Excitonic properties are studied in a strained Ga1-xInxNyAs1-y/GaAs cylindrical quantum dot. The optimum condition for the desired band alignment for emitting wavelength 1.55 μm is investigated using band anticrossing model and the model solid theory. The band gap and the band discontinuities of a Ga1-xInxNyAs1-y/GaAs quantum dot on GaAs are computed with the geometrical confinement effect. The binding energy of the exciton, the oscillator strength and its radiative life time for the optimum condition are found taking into account the spatial confinement effect. The effects of geometrical confinement and the nitrogen incorporation on the interband emission energy are brought out. The result shows that the desired band alignment for emitting wavelength 1.55 μm is achieved for the inclusion of alloy contents, y=0.0554% and x=0.339% in Ga1-xInxNyAs1-y/GaAs quantum dot. And the incorporation of nitrogen and indium shows the red-shift and the geometrical confinement shows the blue-shift. And it can be applied for fibre optical communication networks.

Efficiency enhancement of hybridized solar cells through co-sensitization and fast charge extraction by up-converted polyethylene glycol modified carbon quantum dots

NASA Astrophysics Data System (ADS)

Zhu, Wanlu; Duan, Jialong; Duan, Yanyan; Zhao, Yuanyuan; Tang, Qunwei

2017-11-01

Photovoltaics are promising solutions to energy crisis and environmental pollution problems. The dye-sensitized solar cells with mesoscopic structures have attracted growing interests because of zero emissions, easy fabrication, scalable materials and techniques, etc. However, the state-of-the-art dye-sensitized solar cells have narrow spectral absorption for photoelectric conversion and high electron-hole recombination rate under sunlight illumination. Therefore, it is a persistent object to make wide-spectral absorption and fast charge extraction solar cells for energy harvest in both solar and dark-light conditions. To address this issue, we present here experimental realization of a category of solar cells converting visible and near-infrared light into electricity by co-sensitizing photoanode with N719 dye and polyethylene glycol (PEG) modified carbon quantum dots (PEG-m-CQDs), arising from up-conversion and hole-transporting behaviors of PEG-m-CQDs as well as photofluorescence of green-emitting long persistence phosphors. The optimized solar cell yields maximized photoelectric conversion efficiencies of 9.89% and 25.81% under simulated sunlight (air mass 1.5, 100 mW cm-2) illumination and dark conditions, respectively. This work is far from optimization, but the physical proof-of-concept hybridized solar cell may markedly increase electricity generation time and total power output of photovoltaic platforms.

Highly Efficient Red-Emitting Carbon Dots with Gram-Scale Yield for Bioimaging.

PubMed

Ding, Hui; Wei, Ji-Shi; Zhong, Ning; Gao, Qing-Yu; Xiong, Huan-Ming

2017-11-07

Carbon dots (CDs) are a new class of photoluminescent (PL), biocompatible, environment-friendly, and low-cost carbon nanomaterials. Synthesis of highly efficient red-emitting carbon dots (R-CDs) on a gram scale is a great challenge at present, which heavily restricts the wide applications of CDs in the bioimaging field. Herein, R-CDs with a high quantum yield (QY) of 53% are produced on a gram scale by heating a formamide solution of citric acid and ethylenediamine. The as-prepared R-CDs have an average size of 4.1 nm and a nitrogen content of about 30%, with an excitation-independent emission at 627 nm. After detailed characterizations, such strong red fluorescence is ascribed to the contribution from the nitrogen- and oxygen-related surface states and the nitrogen-derived structures in the R-CD cores. Our R-CDs show good photostability and low cytotoxicity, and thus they are excellent red fluorescence probes for bioimaging both in vitro and in vivo.

Enhancing the Performance of CdSe/CdS Dot-in-Rod Light-Emitting Diodes via Surface Ligand Modification.

PubMed

Rastogi, Prachi; Palazon, Francisco; Prato, Mirko; Di Stasio, Francesco; Krahne, Roman

2018-02-14

The surface ligands on colloidal nanocrystals (NCs) play an important role in the performance of NC-based optoelectronic devices such as photovoltaic cells, photodetectors, and light-emitting diodes (LEDs). On one hand, the NC emission depends critically on the passivation of the surface to minimize trap states that can provide nonradiative recombination channels. On the other hand, the electrical properties of NC films are dominated by the ligands that constitute the barriers for charge transport from one NC to its neighbor. Therefore, surface modifications via ligand exchange have been employed to improve the conductance of NC films. However, in LEDs, such surface modifications are more critical because of their possible detrimental effects on the emission properties. In this work, we study the role of surface ligand modifications on the optical and electrical properties of CdSe/CdS dot-in-rods (DiRs) in films and investigate their performance in all-solution-processed LEDs. The DiR films maintain high photoluminescence quantum yield, around 40-50%, and their electroluminescence in the LED preserves the excellent color purity of the photoluminescence. In the LEDs, the ligand exchange boosted the luminance, reaching a fourfold increase from 2200 cd/m 2 for native surfactants to 8500 cd/m 2 for the exchanged aminoethanethiol (AET) ligands. Moreover, the efficiency roll-off, operational stability, and shelf life are significantly improved, and the external quantum efficiency is modestly increased from 5.1 to 5.4%. We relate these improvements to the increased conductivity of the emissive layer and to the better charge balance of the electrically injected carriers. In this respect, we performed ultraviolet photoelectron spectroscopy (UPS) to obtain a deeper insight into the band alignment of the LED structure. The UPS data confirm similar flat-band offsets of the emitting layer to the electron- and hole-transport layers in the case of AET ligands, which translates to more symmetric barriers for charge injection of electrons and holes. Furthermore, the change in solubility of the NCs induced by the ligand exchange allows for a layer-by-layer deposition process of the DiR films, which yields excellent homogeneity and good thickness control and enables the fabrication of all the LED layers (except for cathode and anode) by spin-coating.

Dependence of the phototropic response of Arabidopsis thaliana on fluence rate and wavelength

DOE Office of Scientific and Technical Information (OSTI.GOV)

Konjevic, R.; Steinitz, B.; Poff, K.L.

1989-12-01

In the phototropic response of Arabidopsis thaliana seedlings, the shape of the fluence-response relation depends on fluence rate and wavelength. At low fluence rates, the response to 450-nm light is characterized by a single maximum at about 0.3 {mu}mol{center dot}m{sup {minus}2}. At higher fluence rates, the response shows two distinct maxima, I and II, at 0.3 and 3.5 {mu}mol{center dot}m{sup {minus}2}, respectively. The response to 500-nm light shows a single maximum at 2 {mu}mol{center dot}m{sup {minus}2}, and the response to 510-nm light shows a single maximum at 4.5 {mu}mol{center dot}m{sup {minus}2}, independent of fluence rate. The response to 490-nm lightmore » shows a maximal at 4.5 {mu}mol{center dot}m{sup {minus}2} and a shoulder at about 0.6 {mu}mol{center dot}m{sup {minus}2}. Preirradiation with high-fluence 510-nm light from above, immediately followed by unilateral 450-nm light, eliminates maximum II but not maximum I. Preirradiation with high-fluence 450-nm light from above eliminates the response to subsequent unilateral irradiation with either 450-nm or 510-nm light. The recovery of the response following high-fluence 450-nm light is considerably slower than the recovery following high-fluence 510-nm light. Unilateral irradiation with low-fluence 510-nm light followed by 450-nm light results in curvature that is approximately the sum of those produced by either irradiation alone. Based on these results, it is proposed that phototropism in A. thaliana seedlings is mediated by at least two blue-light photoreceptor pigments.« less

Optical Properties of CdSe/ZnS Nanocrystals

PubMed Central

Gaigalas, Adolfas K; DeRose, Paul; Wang, Lili; Zhang, Yu-Zhong

2014-01-01

Measurements are presented of the absorbance, fluorescence emission, fluorescence quantum yield, and fluorescence lifetime of CdSe/ZnS nanocrystals, also known as quantum dots (QDs). The study included three groups of nanocrystals whose surfaces were either passivated with organic molecules, modified further with carboxyl groups, or conjugated with CD14 mouse anti-human antibodies. The surface modifications had observable effects on the optical properties of the nanocrystals. The oscillator strength (OS) of the band edge transition was about 1.0 for the nanocrystals emitting at 565 nm, 605 nm, and 655 nm. The OS could not be determined for QDs with emission at 700 nm and 800 nm. The fluorescence lifetimes varied from 26 ns for nanocrystals emitting near 600 nm to 150 ns for nanocrystals emitting near 800 nm. The quantum yield ranged between 0.4 and 0.9 for the nanocrystals in this study. A brightness index (BI) was used to evaluate the suitability of the nanocrystal labels for flow cytometer measurements. Most QD labels are at least as bright as fluorescein for applications in flow cytometer assays with 488 nm excitation. For optimal brightness the QDs should be excited with 405 nm light. We observed a strong dependence of the QD absorbance at 250 nm on the surface modification of the QD. PMID:26601047

Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots.

PubMed

Chen, Yan; Zhang, Jiaxiang; Zopf, Michael; Jung, Kyubong; Zhang, Yang; Keil, Robert; Ding, Fei; Schmidt, Oliver G

2016-01-27

Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.

InAs Colloidal Quantum Dots Synthesis via Aminopnictogen Precursor Chemistry.

PubMed

Grigel, Valeriia; Dupont, Dorian; De Nolf, Kim; Hens, Zeger; Tessier, Mickael D

2016-10-05

Despite their various potential applications, InAs colloidal quantum dots have attracted considerably less attention than more classical II-VI materials because of their complex syntheses that require hazardous precursors. Recently, amino-phosphine has been introduced as a cheap, easy-to-use and efficient phosphorus precursor to synthesize InP quantum dots. Here, we use aminopnictogen precursors to implement a similar approach for synthesizing InAs quantum dots. We develop a two-step method based on the combination of aminoarsine as the arsenic precursor and aminophosphine as the reducing agent. This results in state-of-the-art InAs quantum dots with respect to the size dispersion and band-gap range. Moreover, we present shell coating procedures that lead to the formation of InAs/ZnS(e) core/shell quantum dots that emit in the infrared region. This innovative synthesis approach can greatly facilitate the research on InAs quantum dots and may lead to synthesis protocols for a wide range of III-V quantum dots.

Spectral gain measurements of quantum confined emitters, and design and fabrication of intersubband quantum box laser structures

NASA Astrophysics Data System (ADS)

Tsvid, Gene

Semiconductor laser active regions are commonly characterized by photo- and electro-luminescence (PL, EL) and cavity length analysis. However quantitative spectral information is not readily extracted from PL and EL data and comparison of different active region materials can be difficult. More quantifiable spectral information is contained in the optical gain spectra. This work reports on spectral gain studies, using multi-segmented interband devices, of InGaAs quantum well and quantum dot active regions grown by metalorganic chemical vapor deposition (MOCVD). Using the fundamental connection between gain and spontaneous emission spectra, the spontaneous radiative current and spontaneous radiative efficiency is evaluated for these active regions. The spectral gain and spontaneous radiative efficiency measurements of 980 nm emitting InGaAs quantum well (QW) material provides a benchmark comparison to previous results obtained on highly-strained, 1200 nm emitting InGaAs QW material. These studies provide insight into carrier recombination and the role of the current injection efficiency in InGaAs QW lasers. The spectral gain of self-assembled MOCVD grown InGaAs quantum dots (QD) active regions are also investigated, allowing for comparison to InGaAs QW material. The second part of my talk will cover intersubband-transition QW and quantum-box (QB) lasers. Quantum cascade (QC) lasers have emerged as compact and technologically important light sources in the mid-infrared (IR) and far-IR wavelength ranges infringing on the near-IR and terahertz spectral regions respectively. However, the overall power conversion efficiency, so-called wallplug efficiency, of the best QC lasers, emitting around 5 microns, is ˜9% in CW operation and very unlikely to exceed 15%. In order to dramatically improve the wallplug efficiency of mid-IR lasers (i.e., to about 50%), intersubband QB (IQB) lasers have been proposed. The basic idea, the optimal design and the progress towards the fabrication of IQB lasers will be presented.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Automated setup for spray assisted layer-by-layer deposition.

PubMed

Mundra, Paul; Otto, Tobias; Gaponik, Nikolai; Eychmüller, Alexander

2013-07-01

The design for a setup allowing the layer-by-layer (LbL) assembly of thin films consisting of various colloidal materials is presented. The proposed system utilizes the spray-assisted LbL approach and is capable of autonomously producing films. It provides advantages to existing LbL procedures in terms of process speed and applicability. The setup offers several features that are advantageous for routine operation like an actuated sample holder, stainless steel spraying nozzles, or an optical liquid detection system. The applicability is demonstrated by the preparation of films containing semiconductor nanoparticles, namely, CdSe∕CdS quantum dots and a polyelectolyte. The films of this type are of potential interest for applications in optoelectronic devices such as light-emitting diodes or solar cells.

Modeling of the whispering gallery mode in microdisk and microgear resonators using a Toeplitz matrix formalism for single-photon source

NASA Astrophysics Data System (ADS)

Attia, Moez; Gueddana, Amor; Chatta, Rihab; Morand, Alain

2013-09-01

The work presented in this paper develops a new formalism to design microdisks and microgears structures. The main objective is to study the optics and geometrics parameters influence on the microdisks and microgears structures resonance behavior. This study is conducted to choice a resonance structure with height quality factor Q to be associated with Quantum dot to form a single photon source. This new method aims to design resonant structures that are simpler and requires less computing performances than FDTD and Floquet Block methods. This formalism is based on simplifying Fourier transformed and using toeplitz matrix writing. This new writing allows designing all kind of resonance structures with any defect and any modification. In other study we have design a quantum dot emitting a photon at 1550 nm of the fundamental mode, but the quantum dot emits other photons at other wavelengths. The focus of the resonant structure and the quantum dot association is the resonance of the photon at 1550 nm and the elimination of all other photons with others energies. The quantum dot studied in [1] is an InAs/GaAs quantum dot, we design an GaAS microdisk and microgear and we compare the quality factor Q of this two structures and we conclude that the microgear is more appropriated to be associate to the quantum dot and increase the probability P1 to obtain a single photon source at 1550 nm and promotes the obtaining of single photon. The performance improving of the resonant structure is able to increase the success of quantum applications such as quantum gates based on single photon source.

Solvent-Controlled Synthesis of Highly Luminescent Carbon Dots with a Wide Color Gamut and Narrowed Emission Peak Widths.

PubMed

Ding, Hui; Wei, Ji-Shi; Zhang, Peng; Zhou, Zi-Yuan; Gao, Qing-Yu; Xiong, Huan-Ming

2018-05-01

Carbon dots (CDs) have tremendous potential applications in bioimaging, biomedicine, and optoelectronics. By far, it is still difficult to produce photoluminescence (PL) tunable CDs with high quantum yield (QY) across the entire visible spectrum and narrow the emission peak widths of CDs close to those of typical quantum dots. In this work, a series of CDs with tunable emission from 443 to 745 nm, quantum yield within 13-54%, and narrowed full width at half maximum (FWHM) from 108 to 55 nm, are obtained by only adjusting the reaction solvents in a one-pot solvothermal route. The distinct optical features of these CDs are based on their differences in the particle size, and the content of graphitic nitrogen and oxygen-containing functional groups, which can be modulated by controlling the dehydration and carbonization processes during solvothermal reactions. Blue, green, yellow, red, and even pure white light emitting films (Commission Internationale de L'Eclairage (CIE)= 0.33, 0.33, QY = 39%) are prepared by dispersing one or three kinds of CDs into polyvinyl alcohol with appropriate ratios. The near-infrared emissive CDs are excellent fluorescent probes for both in vitro and in vivo bioimaging because of their high QY in water, long-term stability, and low cytotoxicity. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Defect induced photoluminescence in MoS2 quantum dots and effect of Eu3+/Tb3+ co-doping towards efficient white light emission

NASA Astrophysics Data System (ADS)

Haldar, Dhrubaa; Ghosh, Arnab; Bose, Saptasree; Mondal, Supriya; Ghorai, Uttam Kumar; Saha, Shyamal K.

2018-05-01

Intensive research has been carried out on optical properties of MoS2 quantum dots for versatile applications in photo catalytic, sensing and optoelectronic devices. However, white light generation from MoS2 quantum dots particularly using doping effect is relatively unexplored. Herein we report successful synthesis of Europium (Eu)/Terbium (Tb) co-doped MoS2 quantum dots to achieve white light for potential applications in optoelectronic devices. The dopant ions are introduced into the host lattice to retain the emission colors to cover the entire range of visible light of solar spectrum. Perfect white light (CIE = 0.31, 0.33) with high intensity (quantum yield = 28.29%) is achieved in these rare earth elements co-doped quantum dot system. A new peak is observed in the NIR region which is attributed to the defects present in MoS2 quantum dots. Temperature dependent study has been carried out to understand the origin of this new peak in the NIR region. It is seen that the 'S' defects in the QDs cause the appearance of this peak which shows a blue shift at higher temperature.

Red, green, and blue lasing enabled by single-exciton gain in colloidal quantum dot films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V.; Dang, Cuong

The methods and materials described herein contemplate the use films of colloidal quantum dots as a gain medium in a vertical-cavity surface-emitting laser. The present disclosure demonstrates a laser with single-exciton gain in the red, green, and blue wavelengths. Leveraging this nanocomposite gain, the results realize a significant step toward full-color single-material lasers.

Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

NASA Astrophysics Data System (ADS)

Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia

2018-02-01

We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.

Polarization of the photoluminescence of quantum dots incorporated into quantum wires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Platonov, A. V., E-mail: alexei.platonov@mail.ioffe.ru; Kochereshko, V. P.; Kats, V. N.

The photoluminescence spectra of individual quantum dots incorporated into a quantum wire are studied. From the behavior of the spectra in a magnetic field, it is possible to estimate the exciton binding energy in a quantum dot incorporated into a quantum wire. It is found that the exciton photoluminescence signal emitted from a quantum dot along the direction of the nanowire axis is linearly polarized. At the same time, the photoluminescence signal propagating in the direction orthogonal to the nanowire axis is practically unpolarized. The experimentally observed effect is attributed to the nonaxial arrangement of the dot in the wiremore » under conditions of a huge increase in the exciton binding energy due to the effect of the image potential on the exciton.« less

Resource Materials for Nanoscale Science and Technology Education

NASA Astrophysics Data System (ADS)

Lisensky, George

2006-12-01

Nanotechnology and advanced materials examples can be used to explore science and engineering concepts, exhibiting the "wow" and potential of nanotechnology, introducing prospective scientists to key ideas, and educating a citizenry capable of making well-informed technology-driven decisions. For example, material syntheses an atomic layer at a time have already revolutionized lighting and display technologies and dramatically expanded hard drive storage capacities. Resource materials include kits, models, and demonstrations that explain scanning probe microscopy, x-ray diffraction, information storage, energy and light, carbon nanotubes, and solid-state structures. An online Video Lab Manual, where movies show each step of the experiment, illustrates more than a dozen laboratory experiments involving nanoscale science and technology. Examples that are useful at a variety of levels when instructors provide the context include preparation of self-assembled monolayers, liquid crystals, colloidal gold, ferrofluid nanoparticles, nickel nanowires, solar cells, electrochromic thin films, organic light emitting diodes, and quantum dots. These resources have been developed, refined and class tested at institutions working with the Materials Research Science and Engineering Center on Nanostructured Interfaces at the University of Wisconsin-Madison (http://mrsec.wisc.edu/nano).

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

PubMed

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-23

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-01

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Multifunctional Magnetic and Upconverting Nanobeads as Dual Modal Imaging Tools.

PubMed

Materia, Maria Elena; Pernia Leal, Manuel; Scotto, Marco; Balakrishnan, Preethi Bala; Kumar Avugadda, Sahitya; García-Martín, María L; Cohen, Bruce E; Chan, Emory M; Pellegrino, Teresa

2017-11-15

We report the fabrication of aqueous multimodal imaging nanocomposites based on superparamagnetic nanoparticles (MNPs) and two different sizes of photoluminescent upconverting nanoparticles (UCNPs). The controlled and simultaneous incorporation of both types of nanoparticles (NPs) was obtained by controlling the solvent composition and the addition rate of the destabilizing solvent. The magnetic properties of the MNPs remained unaltered after their encapsulation into the polymeric beads as shown by the T2 relaxivity measurements. The UCNPs maintain photoluminescent properties even when embedded with the MNPs into the polymer bead. Moreover, the light emitted by the magnetic and upconverting nanobeads (MUCNBs) under NIR excitation (λ exc = 980 nm) was clearly observed through different thicknesses of agarose gel or through a mouse skin layer. The comparison with magnetic and luminescent nanobeads based on red-emitting quantum dots (QDs) demonstrated that while the QD-based beads show significant autofluorescence background from the skin, the signal obtained by the MUCNBs allows a decrease in this background. In summary, these results indicate that MUCNBs are good magnetic and optical probes for in vivo multimodal imaging sensors.

UV Nano-Lights - Nonlinear Quantum Dot-Plasmon Coupling

DTIC Science & Technology

2016-06-20

AFRL-AFOSR-JP-TR-2016-0072 UV Nano-Lights - Nonlinear Quantum Dot- Plasmon Coupling Eric Waclawik QUEENSLAND UNIVERSITY OF TECHNOLOGY Final Report 06...Final 3.  DATES COVERED (From - To)  03 Feb 2014 to 02 Feb 2016 4.  TITLE AND SUBTITLE UV Nano-Lights - Nonlinear Quantum Dot- Plasmon Coupling 5a...in the form of the localised surface plasmon resonance of the gold component of nanoparticle hybrids could enhance nonlinear emission by several

UV Nano Lights - Nonlinear Quantum Dot-Plasmon Coupling

DTIC Science & Technology

2016-06-20

AFRL-AFOSR-JP-TR-2016-0072 UV Nano-Lights - Nonlinear Quantum Dot- Plasmon Coupling Eric Waclawik QUEENSLAND UNIVERSITY OF TECHNOLOGY Final Report 06...Final 3.  DATES COVERED (From - To)  03 Feb 2014 to 02 Feb 2016 4.  TITLE AND SUBTITLE UV Nano-Lights - Nonlinear Quantum Dot- Plasmon Coupling 5a...in the form of the localised surface plasmon resonance of the gold component of nanoparticle hybrids could enhance nonlinear emission by several

Reshaping Light-Emitting Diodes To Increase External Efficiency

NASA Technical Reports Server (NTRS)

Rogowski, Robert; Egalon, Claudio

1995-01-01

Light-emitting diodes (LEDs) reshaped, according to proposal, increasing amount of light emitted by decreasing fraction of light trapped via total internal reflection. Results in greater luminous output power for same electrical input power; greater external efficiency. Furthermore, light emitted by reshaped LEDs more nearly collimated (less diffuse). Concept potentially advantageous for conventional red-emitting LEDs. More advantageous for new "blue" LEDs, because luminous outputs and efficiencies of these devices very low. Another advantage, proposed conical shapes achieved relatively easily by chemical etching of semiconductor surfaces.

Lamp method and apparatus using multiple reflections

DOEpatents

MacLennan, Donald A.; Turner, Brian P.

2001-01-01

An electrodeless microwave discharge lamp includes an envelope with a discharge forming fill disposed therein which emits light, the fill being capable of absorbing light at one wavelength and re-emitting the absorbed light at a different wavelength, the light emitted from the fill having a first spectral power distribution in the absence of reflection of light back into the fill, a source of microwave energy coupled to the fill to excite the fill and cause the fill to emit light, and a reflector disposed within the microwave cavity and configured to reflect at least some of the light emitted by the fill back into the fill while allowing some light to exit, the exiting light having a second spectral power distribution with proportionately more light in the visible region as compared to the first spectral power distribution, wherein the light re-emitted by the fill is shifted in wavelength with respect to the absorbed light and the magnitude of the shift is in relation to an effective optical path length.

Hybrid chip-on-board LED module with patterned encapsulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soer, Wouter Anthon; Helbing, Rene; Huang, Guan

Different wavelength conversion materials, or different concentrations of a wavelength conversion material are used to encapsulate the light emitting elements of different colors of a hybrid light emitting module. In an embodiment of this invention, second light emitting elements (170) of a particular color are encapsulated with a transparent second encapsulant (120;420;520), while first light emitting elements (160) of a different color are encapsulated with a wavelength conversion first encapsulant (110;410;510). In another embodiment of this invention, a particular second set of second and third light emitting elements (170,580) of different colors is encapsulated with a different encapsulant than anothermore » first set of first light emitting elements (160).« less

Perovskite Materials for Light-Emitting Diodes and Lasers.

PubMed

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dispersion of the electron g factor anisotropy in InAs/InP self-assembled quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belykh, V. V., E-mail: vasilii.belykh@tu-dortmund.de; P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991; Yakovlev, D. R.

The electron g factor in an ensemble of InAs/InP quantum dots with emission wavelengths around 1.4 μm is measured using time-resolved pump-probe Faraday rotation spectroscopy in different magnetic field orientations. Thereby, we can extend recent single dot photoluminescence measurements significantly towards lower optical transition energies through 0.86 eV. This allows us to obtain detailed insight into the dispersion of the recently discovered g factor anisotropy in these infrared emitting quantum dots. We find with decreasing transition energy over a range of 50 meV a strong enhancement of the g factor difference between magnetic field normal and along the dot growth axis, namely, frommore » 1 to 1.7. We argue that the g factor cannot be solely determined by the confinement energy, but the dot asymmetry underlying this anisotropy therefore has to increase with increasing dot size.« less

Rapid Synthesis of Carbon Dots by Hydrothermal Treatment of Lignin

PubMed Central

Chen, Wenxin; Hu, Chaofan; Yang, Yunhua; Cui, Jianghu; Liu, Yingliang

2016-01-01

A rapid approach has been developed for the fluorescent carbon dots (CDs) by the hydrothermal treatment of lignin in the presence of H2O2. The as-synthesized CDs were found to emit blue photoluminescence with excellent photostability. Moreover, the CDs displayed biocompatibility, low cytotoxicity, and high water solubility properties. Finally, the as-resulted CDs were demonstrated to be excellent probes for bioimaging and biosensing applications. PMID:28773309

Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions

NASA Astrophysics Data System (ADS)

Zopf, Michael; Keil, Robert; Chen, Yan; HöFer, Bianca; Zhang, Jiaxiang; Ding, Fei; Schmidt, Oliver G.

Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization entangled photon pairs. Despite remarkable progress in the last twenty years, many challenges still remain for this material, such as the extremely low yield (< 1% quantum dots can emit entangled photons), the low degree of entanglement, and the large wavelength distribution. Here we show that, with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble (close to 100%) of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement (fidelity up to F=0.91, with a record high concurrence C=0.90), and ultra-narrow wavelength distribution at rubidium transitions. Therefore, a solid-state quantum repeater - among many other key enabling quantum photonic elements - can be practically implemented with this new material. Financially supported by BMBF Q.Com-H (16KIS0106) and the Euro- pean Union Seventh Framework Programme 209 (FP7/2007-2013) under Grant Agreement No. 601126 210 (HANAS).

Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices

DTIC Science & Technology

2003-01-01

Kramer Fabrication of hcp-Co nanocrystals via rapid pyrolysis in inverse PS - b - P2VP micelles and thermal annealing Nano Letters In Press ...the figure) and different pump photon energies. a) hν=1.684eV, b ) hν= 1.536eV and c) hν= 1.433eV. All spectra are normalized to the maximum value of...correlation functions of two consecutively emitted photons from a single excited semiconductor quantum dot. We have shown that a 6 a) b ) 0.10 [ML/s] 250 nm 3.0

Device and Method of Scintillating Quantum Dots for Radiation Imaging

NASA Technical Reports Server (NTRS)

Burke, Eric R. (Inventor); DeHaven, Stanton L. (Inventor); Williams, Phillip A. (Inventor)

2017-01-01

A radiation imaging device includes a radiation source and a micro structured detector comprising a material defining a surface that faces the radiation source. The material includes a plurality of discreet cavities having openings in the surface. The detector also includes a plurality of quantum dots disclosed in the cavities. The quantum dots are configured to interact with radiation from the radiation source, and to emit visible photons that indicate the presence of radiation. A digital camera and optics may be used to capture images formed by the detector in response to exposure to radiation.

Environmental barrier material for organic light emitting device and method of making

DOEpatents

Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

2003-02-18

An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

Nano-imaging enabled via self-assembly

PubMed Central

McLeod, Euan; Ozcan, Aydogan

2014-01-01

SUMMARY Imaging object details with length scales below approximately 200 nm has been historically difficult for conventional microscope objective lenses because of their inability to resolve features smaller than one-half the optical wavelength. Here we review some of the recent approaches to surpass this limit by harnessing self-assembly as a fabrication mechanism. Self-assembly can be used to form individual nano- and micro-lenses, as well as to form extended arrays of such lenses. These lenses have been shown to enable imaging with resolutions as small as 50 nm half-pitch using visible light, which is well below the Abbe diffraction limit. Furthermore, self-assembled nano-lenses can be used to boost contrast and signal levels from small nano-particles, enabling them to be detected relative to background noise. Finally, alternative nano-imaging applications of self-assembly are discussed, including three-dimensional imaging, enhanced coupling from light-emitting diodes, and the fabrication of contrast agents such as quantum dots and nanoparticles. PMID:25506387

Recent Advances in Inorganic Nanoparticle-Based NIR Luminescence Imaging: Semiconductor Nanoparticles and Lanthanide Nanoparticles.

PubMed

Kim, Dokyoon; Lee, Nohyun; Park, Yong Il; Hyeon, Taeghwan

2017-01-18

Several types of nanoparticle-based imaging probes have been developed to replace conventional luminescent probes. For luminescence imaging, near-infrared (NIR) probes are useful in that they allow deep tissue penetration and high spatial resolution as a result of reduced light absorption/scattering and negligible autofluorescence in biological media. They rely on either an anti-Stokes or a Stokes shift process to generate luminescence. For example, transition metal-doped semiconductor nanoparticles and lanthanide-doped inorganic nanoparticles have been demonstrated as anti-Stokes shift-based agents that absorb NIR light through two- or three-photon absorption process and upconversion process, respectively. On the other hand, quantum dots (QDs) and lanthanide-doped nanoparticles that emit in NIR-II range (∼1000 to ∼1350 nm) were suggested as promising Stokes shift-based imaging agents. In this topical review, we summarize and discuss the recent progress in the development of inorganic nanoparticle-based luminescence imaging probes working in NIR range.

Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core-Shell Heterostructures.

PubMed

Lewis, Ryan B; Corfdir, Pierre; Küpers, Hanno; Flissikowski, Timur; Brandt, Oliver; Geelhaar, Lutz

2018-04-11

The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realize arrays of extremely and controllably bent nanowires comprising lattice-mismatched and highly asymmetric core-shell heterostructures. Strain sharing across the nanowire heterostructures is sufficient to bend vertical nanowires over backward to contact either neighboring nanowires or the substrate itself, presenting new possibilities for designing nanowire networks and interconnects. Photoluminescence spectroscopy on bent-nanowire heterostructures reveals that spatially varying strain fields induce charge carrier drift toward the tensile-strained outside of the nanowires, and that the polarization response of absorbed and emitted light is controlled by the bending direction. This unconventional strain field is employed for light emission by placing an active region of quantum dots at the outer side of a bent nanowire to exploit the carrier drift and tensile strain. These results demonstrate how bending in nanoheterostructures opens up new degrees of freedom for strain and device engineering.

Light emitting fabric technologies for photodynamic therapy.

PubMed

Mordon, Serge; Cochrane, Cédric; Tylcz, Jean Baptiste; Betrouni, Nacim; Mortier, Laurent; Koncar, Vladan

2015-03-01

Photodynamic therapy (PDT) is considered to be a promising method for treating various types of cancer. A homogeneous and reproducible illumination during clinical PDT plays a determinant role in preventing under- or over-treatment. The development of flexible light sources would considerably improve the homogeneity of light delivery. The integration of optical fiber into flexible structures could offer an interesting alternative. This paper aims to describe different methods proposed to develop Side Emitting Optical Fibers (SEOF), and how these SEOF can be integrated in a flexible structure to improve light illumination of the skin during PDT. Four main techniques can be described: (i) light blanket integrating side-glowing optical fibers, (ii) light emitting panel composed of SEOF obtained by micro-perforations of the cladding, (iii) embroidery-based light emitting fabric, and (iv) woven-based light emitting fabric. Woven-based light emitting fabrics give the best performances: higher fluence rate, best homogeneity of light delivery, good flexibility. Copyright © 2014 Elsevier B.V. All rights reserved.

Recent developments in white light emitting diodes

NASA Astrophysics Data System (ADS)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

Top-emitting organic light-emitting diodes.

PubMed

Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

2011-11-07

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Improving the light-emitting properties of single-layered polyfluorene light-emitting devices by simple ionic liquid blending

NASA Astrophysics Data System (ADS)

Horike, Shohei; Nagaki, Hiroto; Misaki, Masahiro; Koshiba, Yasuko; Morimoto, Masahiro; Fukushima, Tatsuya; Ishida, Kenji

2018-03-01

This paper describes an evaluation of ionic liquids (ILs) as potential electrolytes for single-layered light-emitting devices with good emission performance. As optoelectronic devices continue to grow in abundance, high-performance light-emitting devices with a single emission layer are becoming increasingly important for low-cost production. We show that a simple technique of osmosing IL into the polymer layer can result in high luminous efficiency and good response times of single-layered light-emitting polymers, even without the additional stacking of charge carrier injection and transport layers. The IL contributions to the light-emission of the polymer are discussed from the perspectives of energy diagrams and of the electric double layers on the electrodes. Our findings enable a faster, cheaper, and lower-in-waste production of light-emitting devices.

Interfacing a quantum dot with a spontaneous parametric down-conversion source

NASA Astrophysics Data System (ADS)

Huber, Tobias; Prilmüller, Maximilian; Sehner, Michael; Solomon, Glenn S.; Predojević, Ana; Weihs, Gregor

2017-09-01

Quantum networks require interfacing stationary and flying qubits. These flying qubits are usually nonclassical states of light. Here we consider two of the leading source technologies for nonclassical light, spontaneous parametric down-conversion and single semiconductor quantum dots. Down-conversion delivers high-grade entangled photon pairs, whereas quantum dots excel at producing single photons. We report on an experiment that joins these two technologies and investigates the conditions under which optimal interference between these dissimilar light sources may be achieved.

Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yacob, M.; Reithmaier, J. P.; Benyoucef, M., E-mail: m.benyoucef@physik.uni-kassel.de

The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 × 10{sup 8} cm{sup −2} are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 μm with narrow excitonic linewidth below 50 μeV, which can be used as single photon source in the telecom wavelength range.

Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

PubMed

Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

2015-07-01

Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

Design Considerations for a Water Treatment System Utilizing Ultra-Violet Light Emitting Diodes

DTIC Science & Technology

2014-03-27

DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING DIODES...the United States. ii AFIT-ENV-14-M-58 DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING DIODES...DISTRIBUTION UNLIMITED. iii AFIT-ENV-14-M-58 DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING

Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission

DTIC Science & Technology

2000-06-23

when Nitrogen concentration is increased [91. In molecular beam epitaxy (MBE) one of the reasons of this is the surface quality degradation due to the...cavity surface emitting laser ( VCSEL ) emitting at 1.18 /tm was also reported [7 1. The main problem in the InGaAsN epitaxy is a large difference in the...vertical cavity surface emitting lasers ( VCSELs ). This stimulates attempts to fabricate high quality 1.3 /tm lasers on GaAs substrates. The best results

Efficient broad color luminescence from InGaN/GaN single quantum-well nanocolumn crystals on Si (111) substrate

NASA Astrophysics Data System (ADS)

Zhang, Wei; Zhang, Xuehua; Wang, Yongjin; Hu, Fangren

2017-10-01

Nanocolumn InGaN/GaN single quantum well crystals were deposited on Si (111) substrate with nitrified Ga dots as buffer layer. Transmission electron microscopy image shows the crystals' diameter of 100-130 nm and length of about 900 nm. Nanoscale spatial phase separation of cubic and hexagonal GaN was observed by selective area electron diffraction on the quantum well layer. Raman spectrum of the quantum well crystals proved that the crystals were fully relaxed. Room temperature photoluminescence from 450 to 750 nm and full width at half maximum of about 420 meV indicate broad color luminescence covering blue, green, yellow and red emission, which is helpful for the fabrication of tunable optoelectronic devices and colorful light emitting diodes.

A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

PubMed Central

Rae, Bruce R.; Muir, Keith R.; Gong, Zheng; McKendry, Jonathan; Girkin, John M.; Gu, Erdan; Renshaw, David; Dawson, Martin D.; Henderson, Robert K.

2009-01-01

We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented. PMID:22291564

Electrochemical control over photoinduced electron transfer and trapping in CdSe-CdTe quantum-dot solids.

PubMed

Boehme, Simon C; Walvis, T Ardaan; Infante, Ivan; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Houtepen, Arjan J

2014-07-22

Understanding and controlling charge transfer between different kinds of colloidal quantum dots (QDs) is important for devices such as light-emitting diodes and solar cells and for thermoelectric applications. Here we study photoinduced electron transfer between CdTe and CdSe QDs in a QD film. We find that very efficient electron trapping in CdTe QDs obstructs electron transfer to CdSe QDs under most conditions. Only the use of thiol ligands results in somewhat slower electron trapping; in this case the competition between trapping and electron transfer results in a small fraction of electrons being transferred to CdSe. However, we demonstrate that electron trapping can be controlled and even avoided altogether by using the unique combination of electrochemistry and transient absorption spectroscopy. When the Fermi level is raised electrochemically, traps are filled with electrons and electron transfer from CdTe to CdSe QDs occurs with unity efficiency. These results show the great importance of knowing and controlling the Fermi level in QD films and open up the possibility of studying the density of trap states in QD films as well as the systematic investigation of the intrinsic electron transfer rates in donor-acceptor films.

Tunable single and double emission semiconductor nanocrystal quantum dots: a multianalyte sensor

NASA Astrophysics Data System (ADS)

Ratnesh, Ratneshwar Kumar; Singh Mehata, Mohan

2018-07-01

We have prepared stable colloidal CdTe and CdTe/ZnS core–shell quantum dots (QDs) using hot injection chemical route. The developed CdTe QDs emit tunable single and dual photoluminescence (PL) bands, originating from the direct band edge and the surface state of QDs, as evident by the steady-state and time-resolved spectroscopy. The developed CdTe and CdTe/ZnS QDs act as optical sensors for the detection of metal ions (e.g., Fe2+ and Pb2+) in the feed water. The PL quenching in the presence of analytes has been examined by both the steady-state and time-resolved PL spectroscopy. The linear Stern–Volmer (S–V) plots obtained for PL intensity and lifetime as a function of metal ion concentration demonstrates the diffusion-mediated collisional quenching as a dominant mechanism together with the possibility of fluorescence resonance energy transfer. Thus, the prepared core and core–shell QDs which cover a broad spectral range of white light with high quantum yield (QY) are highly sensitive to the detection of metal ions in feed water and are also important for biological applications (Ratnesh and Mehata 2017 Spectrochim. Acta A: Mol. Biomol. Spectro. 179 201–10).

All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot

PubMed Central

Muñoz-Matutano, G.; Barrera, D.; Fernández-Pousa, C.R.; Chulia-Jordan, R.; Seravalli, L.; Trevisi, G.; Frigeri, P.; Sales, S.; Martínez-Pastor, J.

2016-01-01

New optical fiber based spectroscopic tools open the possibility to develop more robust and efficient characterization experiments. Spectral filtering and light reflection have been used to produce compact and versatile fiber based optical cavities and sensors. Moreover, these technologies would be also suitable to study N-photon correlations, where high collection efficiency and frequency tunability is desirable. We demonstrated single photon emission of a single quantum dot emitting at 1300 nm, using a Fiber Bragg Grating for wavelength filtering and InGaAs Avalanche Photodiodes operated in Geiger mode for single photon detection. As we do not observe any significant fine structure splitting for the neutral exciton transition within our spectral resolution (46 μeV), metamorphic QD single photon emission studied with our all-fiber Hanbury Brown & Twiss interferometer could lead to a more efficient analysis of entangled photon sources at telecom wavelength. This all-optical fiber scheme opens the door to new first and second order interferometers to study photon indistinguishability, entangled photon and photon cross correlation in the more interesting telecom wavelengths. PMID:27257122

Luminescent properties and energy transfer of luminescent carbon dots assembled mesoporous Al(2)O(3): Eu(3) co-doped materials for temperature sensing.

PubMed

He, Youling; He, Jiangling; Zhang, Haoran; Liu, Yingliang; Lei, Bingfu

2017-06-15

Owning to the hydrogen-band interactions, blue-light-emitting luminescent carbon dots (CDs) synthesized by one-pot hydrothermal treatment were successfully assembled into Eu 3+ doped mesoporous aluminas (MAs). Interesting, dual-emissive CDs/MAs co-doped materials with higher quantum yield (QY), long-term stability, mesoporous structure, high thermal stability, and large surface areas were obtained. Furthermore, the obtained CDs/MAs co-doped materials possessed tunable color, and excellent temperature sensitivity due to the existing of energy transfer between CDs and Eu 3+ ion. The energy transfer efficiency (η) and energy transfer probability (P) for CDs/Eu 3+ co-doped materials possessed a monotonous tendency with the change of Eu 3+ content. More importantly, the dual-emissive colors can be regularly adjusted through regulating their excitation wavelength or relative mass ratio. In addition, the emission intensity of the CDs/MAs co-doped materials gradually decreased with increasing temperature showing the clear temperature dependence, this dual-emissive thermometer was with high sensitivity, owning a great fitted curve in the range from 100 to 360K under a single wavelength excitation. Copyright © 2017 Elsevier Inc. All rights reserved.

Light emitting device having peripheral emissive region

DOEpatents

Forrest, Stephen R

2013-05-28

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Working Beyond Moore’s Limit - Coherent Nonlinear Optical Control of Individual and Coupled Single Electron Doped Quantum Dots

DTIC Science & Technology

2015-07-06

preparation for deterministic spin-photon entanglement ; (3) Demonstration of initialization of the 2 qubit states; (4) Demonstration of nonlocal nuclear...Demonstration of a flying qubit by entanglement of the quantum dot spin polarization with the polarization of a spontaneously emitted photon. Future...coherent optical control steps in preparation for deterministic spin-photon entanglement ; (3) Demonstration of initialization of the 2 qubit states in

The influence of the quantum dot/polymethylmethacrylate composite preparation method on the stability of its optical properties under laser radiation

NASA Astrophysics Data System (ADS)

Zvaigzne, M. A.; Martynov, I. L.; Krivenkov, V. A.; Samokhvalov, P. S.; Nabiev, I. R.

2017-01-01

Photoluminescent semiconductor nanocrystals, quantum dots (QDs), are nowadays one of the most promising materials for developing a new generation of fluorescent labels, new types of light-emitting devices and displays, flexible electronic components, and solar panels. In many areas the use of QDs is associated with an intense optical excitation, which, in the case of a prolonged exposure, often leads to changes in their optical characteristics. In the present work we examined how the method of preparation of quantum dot/polymethylmethacrylate (QD/PMMA) composite influenced the stability of the optical properties of QD inside the polymer matrix under irradiation by different laser harmonics in the UV (355 nm) and visible (532 nm) spectral regions. The composites were synthesized by spin-coating and radical polymerization methods. Experiments with the samples obtained by spin-coating showed that the properties of the QD/PMMA films remain almost constant at values of the radiation dose below 10 fJ per particle. Irradiating the composites prepared by the radical polymerization method, we observed a monotonic increase in the luminescence quantum yield (QY) accompanied by an increase in the luminescence decay time regardless of the wavelength of the incident radiation. We assume that the observed difference in the optical properties of the samples under exposure to laser radiation is associated with the processes occurring during radical polymerization, in particular, with charge transfer from the radical particles inside QDs. The results of this study are important for understanding photophysical properties of composites on the basis of QDs, as well as for selection of the type of polymer and the composite synthesis method with quantum dots that would allow one to avoid the degradation of their luminescence.

Photophysics of Thermally-Assisted Photobleaching in "Giant" Quantum Dots Revealed in Single Nanocrystals.

PubMed

Orfield, Noah J; Majumder, Somak; McBride, James R; Yik-Ching Koh, Faith; Singh, Ajay; Bouquin, Sarah J; Casson, Joanna L; Johnson, Alex D; Sun, Liuyang; Li, Xiaoqin; Shih, Chih-Kang; Rosenthal, Sandra J; Hollingsworth, Jennifer A; Htoon, Han

2018-05-07

Quantum dots (QDs) are steadily being implemented as down-conversion phosphors in market-ready display products to enhance color rendering, brightness, and energy efficiency. However, for adequate longevity, QDs must be encased in a protective barrier that separates them from ambient oxygen and humidity, and device architectures are designed to avoid significant heating of the QDs as well as direct contact between the QDs and the excitation source. In order to increase the utility of QDs in display technologies and to extend their usefulness to more demanding applications as, for example, alternative phosphors for solid-state lighting (SSL), QDs must retain their photoluminescence emission properties over extended periods of time under conditions of high temperature and high light flux. Doing so would simplify the fabrication costs for QD display technologies and enable QDs to be used as down-conversion materials in light-emitting diodes for SSL, where direct-on-chip configurations expose the emitters to temperatures approaching 100 °C and to photon fluxes from 0.1 W/mm 2 to potentially 10 W/mm 2 . Here, we investigate the photobleaching processes of single QDs exposed to controlled temperature and photon flux. In particular, we investigate two types of room-temperature-stable core/thick-shell QDs, known as "giant" QDs for which shell growth is conducted using either a standard layer-by-layer technique or by a continuous injection method. We determine the mechanistic pathways responsible for thermally-assisted photodegradation, distinguishing effects of hot-carrier trapping and QD charging. The findings presented here will assist in the further development of advanced QD heterostructures for maximum device lifetime stability.

Towards Violation of Classical Inequalities using Quantum Dot Resonance Fluorescence

NASA Astrophysics Data System (ADS)

Peiris, Manoj

Self-assembled semiconductor quantum dots have attracted considerable interest recently, ranging from fundamental studies of quantum optics to advanced applications in the field of quantum information science. With their atom-like properties, quantum dot based nanophotonic devices may also substantially contribute to the development of quantum computers. This work presents experimental progress towards the understanding of light-matter interactions that occur beyond well-understood monochromatic resonant light scattering processes in semiconductor quantum dots. First, we report measurements of resonance fluorescence under bichromatic laser excitation. With the inclusion of a second laser, both first-order and second-order correlation functions are substantially altered. Under these conditions, the scattered light exhibits a rich spectrum containing many spectral features that lead to a range of nonlinear multiphoton dynamics. These observations are discussed and compared with a theoretical model. Second, we investigated the light scattered by a quantum dot in the presence of spectral filtering. By scanning the tunable filters placed in front of each detector of a Hanbury-Brown and Twiss setup and recording coincidence measurements, a \\two-photon spectrum" has been experimentally reconstructed for the first time. The two-photon spectrum contains a wealth of information about the cascaded emission involved in the scattering process, such as transitions occurring via virtual intermediate states. Our measurements also reveal that the scattered frequency-filtered light from a quantum dot violates the Cauchy-Schwarz inequality. Finally, Franson-interferometry has been performed using spectrally filtered light from quantum dot resonance fluorescence. Visibilities exceeding the classical limit were demonstrated by using a pair of folded Mach-Zehnder interferometers, paving the way for producing single time-energy entangled photon pairs that could violate Bell's inequalities.

Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolodin, Boris; Deshpande, Anirudha R

A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

DOEpatents

LeToquin, Ronan P; Tong, Tao; Glass, Robert C

2014-12-30

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen; Shi, Hongying; Liu, Bin; Wang, Lianhui; Huang, Wei

2015-02-01

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the usemore » of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.« less

Two-photon absorption and efficient encapsulation of near-infrared-emitting CdSexTe1-x quantum dots

NASA Astrophysics Data System (ADS)

Szeremeta, Janusz; Lamch, Lukasz; Wawrzynczyk, Dominika; Wilk, Kazimiera A.; Samoc, Marek; Nyk, Marcin

2015-07-01

Hydrophobic CdSexTe1-x quantum dots with near infrared emission in the 700-750 nm range were synthesized by a wet chemistry technique. Their nonlinear optical properties were studied using Z-scan technique with a tunable femtosecond laser system. The peak value of the two-photon absorption cross section was found to be ∼2400 GM at 1400 nm. To demonstrate a possible way of utilizing the CdSexTe1-x quantum dots in aqueous environment we describe here a convenient method of preparation of Brij 58® micellar systems loaded with the quantum dots. The obtained nanoconstructs were characterized using optical spectroscopy, TEM and DLS. The micelles colloidal stability, and the influence of the encapsulation process on the spectroscopic properties of the quantum dots are discussed. In particular, we have observed a 60 nm blue-shift of the emission maxima upon loading quantum dots inside the micelles.

Graphene quantum dots with nitrogen-doped content dependence for highly efficient dual-modality photodynamic antimicrobial therapy and bioimaging.

PubMed

Kuo, Wen-Shuo; Chen, Hua-Han; Chen, Shih-Yao; Chang, Chia-Yuan; Chen, Pei-Chi; Hou, Yung-I; Shao, Yu-Ting; Kao, Hui-Fang; Lilian Hsu, Chih-Li; Chen, Yi-Chun; Chen, Shean-Jen; Wu, Shang-Rung; Wang, Jiu-Yao

2017-03-01

Reactive oxygen species is the main contributor to photodynamic therapy. The results of this study show that a nitrogen-doped graphene quantum dot, serving as a photosensitizer, was capable of generating a higher amount of reactive oxygen species than a nitrogen-free graphene quantum dot in photodynamic therapy when photoexcited for only 3 min of 670 nm laser exposure (0.1 W cm -2 ), indicating highly improved antimicrobial effects. In addition, we found that higher nitrogen-bonding compositions of graphene quantum dots more efficiently performed photodynamic therapy actions than did the lower compositions that underwent identical treatments. Furthermore, the intrinsically emitted luminescence from nitrogen-doped graphene quantum dots and high photostability simultaneously enabled it to act as a promising contrast probe for tracking and localizing bacteria in biomedical imaging. Thus, the dual modality of nitrogen-doped graphene quantum dots presents possibilities for future clinical applications, and in particular multidrug resistant bacteria. Copyright © 2016 Elsevier Ltd. All rights reserved.

Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55 μ m telecom wavelength

NASA Astrophysics Data System (ADS)

Carmesin, C.; Schowalter, M.; Lorke, M.; Mourad, D.; Grieb, T.; Müller-Caspary, K.; Yacob, M.; Reithmaier, J. P.; Benyoucef, M.; Rosenauer, A.; Jahnke, F.

2017-12-01

Results for the development and detailed analysis of self-organized InAs/InAlGaAs/InP quantum dots suitable for single-photon emission at the 1.55 μ m telecom wavelength are reported. The structural and compositional properties of the system are obtained from high-resolution scanning transmission electron microscopy of individual quantum dots. The system is composed of almost pure InAs quantum dots embedded in quaternary InAlGaAs barrier material, which is lattice matched to the InP substrate. When using the measured results for a representative quantum-dot geometry as well as experimentally reconstructed alloy concentrations, a combination of strain-field and electronic-state calculations is able to reproduce the quantum-dot emission wavelength in agreement with the experimentally determined photoluminescence spectrum. The inhomogeneous broadening of the latter can be related to calculated variations of the emission wavelength for the experimentally deduced In-concentration fluctuations and size variations.

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection.

PubMed

Chen, Disheng; Lander, Gary R; Flagg, Edward B

2017-10-13

The ability to perform simultaneous resonant excitation and fluorescence detection is important for quantum optical measurements of quantum dots (QDs). Resonant excitation without fluorescence detection - for example, a differential transmission measurement - can determine some properties of the emitting system, but does not allow applications or measurements based on the emitted photons. For example, the measurement of photon correlations, observation of the Mollow triplet, and realization of single photon sources all require collection of the fluorescence. Incoherent excitation with fluorescence detection - for example, above band-gap excitation - can be used to create single photon sources, but the disturbance of the environment due to the excitation reduces the indistinguishability of the photons. Single photon sources based on QDs will have to be resonantly excited to have high photon indistinguishability, and simultaneous collection of the photons will be necessary to make use of them. We demonstrate a method to resonantly excite a single QD embedded in a planar cavity by coupling the excitation beam into this cavity from the cleaved face of the sample while collecting the fluorescence along the sample's surface normal direction. By carefully matching the excitation beam to the waveguide mode of the cavity, the excitation light can couple into the cavity and interact with the QD. The scattered photons can couple to the Fabry-Perot mode of the cavity and escape in the surface normal direction. This method allows complete freedom in the detection polarization, but the excitation polarization is restricted by the propagation direction of the excitation beam. The fluorescence from the wetting layer provides a guide to align the collection path with respect to the excitation beam. The orthogonality of the excitation and detection modes enables resonant excitation of a single QD with negligible laser scattering background.

Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Höfer, B.; Zhang, J.; Wildmann, J.; Zallo, E.; Trotta, R.; Ding, F.; Rastelli, A.; Schmidt, O. G.

2017-04-01

Independent tuning of emission energy and decay time of neutral excitons confined in single self-assembled In(Ga)As/GaAs quantum dots is achieved by simultaneously employing vertical electric fields and lateral biaxial strain fields. By locking the emission energy via a closed-loop feedback on the piezoelectric actuator used to control the strain in the quantum dot, we continuously decrease the decay time of an exciton from 1.4 to 0.7 ns. Both perturbations are fully electrically controlled and their combination offers a promising route to engineer the indistinguishability of photons emitted from spatially separated single photon sources.

Monolithically integrated Si gate-controlled light-emitting device: science and properties

NASA Astrophysics Data System (ADS)

Xu, Kaikai

2018-02-01

The motivation of this study is to develop a p-n junction based light emitting device, in which the light emission is conventionally realized using reverse current driving, by voltage driving. By introducing an additional terminal of insulated gate for voltage driving, a novel three-terminal Si light emitting device is described where both the light intensity and spatial light pattern of the device are controlled by the gate voltage. The proposed light emitting device employs injection-enhanced Si in avalanche mode where electric field confinement occurs in the corner of a reverse-biased p+n junction. It is found that, depending on the bias conditions, the light intensity is either a linear or a quadratic function of the applied gate voltage or the reverse-bias. Since the light emission is based on the avalanching mode, the Si light emitting device offers the potential for very large scale integration-compatible light emitters for inter- or intra-chip signal transmission and contactless functional testing of wafers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lafuente-Sampietro, A.; CNRS, Institut Néel, F-38000 Grenoble; Institute of Materials Science, University of Tsukuba, 305-8573 Tsukuba

We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels population in Cr-doped quantum dots shows that the observed spin dynamics is dominated by the exciton-Crmore » interaction. These measurements also provide a lower bound in the 20 ns range for the intrinsic Cr spin relaxation time.« less

Bactericidal effects of a high-power, red light-emitting diode on two periodontopathic bacteria in antimicrobial photodynamic therapy in vitro.

PubMed

Umeda, Makoto; Tsuno, Akiko; Okagami, Yoshihide; Tsuchiya, Fumito; Izumi, Yuichi; Ishikawa, Isao

2011-11-01

  Light-emitting diodes have been investigated as new light activators for photodynamic therapy. We investigated the bactericidal effects of high-power, red light-emitting diodes on two periodontopathic bacteria in vitro.   A light-emitting diode (intensity: 1100 mW/cm(2) , peak wavelength: 650 nm) was used to irradiate a bacterial solution for either 10 or 20 s. Bacterial solutions (Porphyromonas gingivalis or Aggregatibacter actinomycetemcomitans) at a concentration of 2.5 × 10(6) c.f.u./mL were mixed with an equal volume of either methylene blue or toluidine blue O (0-20 μg/mL) and added to titer plate wells. The plate wells were irradiated with red light-emitting diode light from a distance of 22 or 40 mm. The contents were diluted, and 50 μL was smeared onto blood agar plates. After 1 week of culturing, bacterial c.f.u. were counted.   The light-emitting diode energy density was estimated to be approximately 4 and 8 J/cm(2) after 10 and 20 s of irradiation, respectively. Red light-emitting diode irradiation for 10 s from a distance of 22 mm, combined with methylene blue at concentrations >10 μg/mL, completely killed Porphyromonas gingivalis and Aggregatibacter actinomycetemcomitans.   High-power, red light-emitting diode irradiation with a low concentration of dye showed effective bactericidal effects against two periodontopathic bacteria. © 2011 Blackwell Publishing Asia Pty Ltd.

A highly selective fluorescence sensing platform for nanomolar Hg(II) detection based on cytosine derived quantum dot

NASA Astrophysics Data System (ADS)

Luo, Liang; Song, Ting; Wang, Haoqiang; Yuan, Qunhui; Zhou, Shenghai

2018-03-01

Inspired by low toxicity and good biocompatibility of biomass derived quantum dot (QD), we herein developed a cytosine derived quantum dot, namely cyt-dot, via a one-step hydrothermal synthesis. The as-prepared cyt-dot emits blue fluorescence (FL) containing abundant oxygen (20.6 at.%) and nitrogen (24.1 at.%) contents. The cyt-dot based sensing platform shows exclusive selectivity for Hg(II) while being insensitive towards Fe(III) and Ag(I), which are important interference that usually cannot be ruled out. The detection limit for Hg(II) is of 11 nM, which is very close to the guideline value of 10 nM allowed by the U.S. Environmental Protection Agency in drinking water. In real water sample analyses, the present sensing platform can fulfil satisfied recoveries ranging from 100% to 108%. Besides, the acidity of solution has almost no effect on the sensing performance of the cyt-dot in a pH range of 5-8, suggesting its potential applications in sensing and bio-imaging.

Super-Lattice Light Emitting Diodes (SLEDS) on GaAs

DTIC Science & Technology

2016-03-31

Super-Lattice Light Emitting Diodes (SLEDS) on GaAs Kassem Nabha1, Russel Ricker2, Rodney McGee1, Nick Waite1, John Prineas2, Sydney Provence2...infrared light emitting diodes (LEDs). Typically, the LED arrays are mated with CMOS read-in integrated circuit (RIIC) chips using flip-chip bonding. In...circuit (RIIC) chips using flip-chip bonding. This established technology is called Hybrid-super-lattice light emitting diodes (Hybrid- SLEDS). In

One-pot fabrication of high-quality InP/ZnS (core/shell) quantum dots and their application to cellular imaging.

PubMed

Hussain, Sahid; Won, Nayoun; Nam, Jutaek; Bang, Jiwon; Chung, Hyokyun; Kim, Sungjee

2009-07-13

True colors: High-quality InP and InP/ZnS quantum dots (QDs) are obtained by means of a simple one-pot method in the presence of polyethylene glycol (PEG). Rapid and size-controlled reactions lead to highly crystalline and nearly monodisperse QDs at relatively low temperatures. The particles emit from cyan blue to far-red, and are successfully used in cellular imaging (see figure).

Organic light emitting diode with light extracting electrode

DOEpatents

Bhandari, Abhinav; Buhay, Harry

2017-04-18

An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

Self-organized colloidal quantum dots and metal nanoparticles for plasmon-enhanced intermediate-band solar cells.

PubMed

Mendes, Manuel J; Hernández, Estela; López, Esther; García-Linares, Pablo; Ramiro, Iñigo; Artacho, Irene; Antolín, Elisa; Tobías, Ignacio; Martí, Antonio; Luque, Antonio

2013-08-30

A colloidal deposition technique is presented to construct long-range ordered hybrid arrays of self-assembled quantum dots and metal nanoparticles. Quantum dots are promising for novel opto-electronic devices but, in most cases, their optical transitions of interest lack sufficient light absorption to provide a significant impact in their implementation. A potential solution is to couple the dots with localized plasmons in metal nanoparticles. The extreme confinement of light in the near-field produced by the nanoparticles can potentially boost the absorption in the quantum dots by up to two orders of magnitude.In this work, light extinction measurements are employed to probe the plasmon resonance of spherical gold nanoparticles in lead sulfide colloidal quantum dots and amorphous silicon thin-films. Mie theory computations are used to analyze the experimental results and determine the absorption enhancement that can be generated by the highly intense near-field produced in the vicinity of the gold nanoparticles at their surface plasmon resonance.The results presented here are of interest for the development of plasmon-enhanced colloidal nanostructured photovoltaic materials, such as colloidal quantum dot intermediate-band solar cells.

Combatant Eye Protection: An Introduction to the Blue Light Hazard

DTIC Science & Technology

2015-12-01

visible solar radiation (i.e., blue light ), as well as from light - emitting diode (LED)-generated radiant energy remains a questionable factor under...Garcia, M., Picaud, S., Attia D. 2011. Light - emitting diodes (LED) for domestic lighting : Any risks for the eye?. Progress in retinal and eye research...C., Sliney, D. H., Rollag, M., D., Hanifin, J. P., and Brainard, G. C. 2011. Blue light from light - emitting diodes elicits a dose-dependent

Methodological comparison on OLED and OLET fabrication

NASA Astrophysics Data System (ADS)

Suppiah, Sarveshvaran; Hambali, Nor Azura Malini Ahmad; Wahid, Mohamad Halim Abd; Retnasamy, Vithyacharan; Shahimin, Mukhzeer Mohamad

2018-02-01

The potential of organic semiconductor devices for light generation is demonstrated by the commercialization of display technologies based on organic light emitting diode (OLED). In OLED, organic materials play the role of light emission once the current is passed through. However, OLED do have major drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as the new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as light generation. The aim of this study is to methodologically compare and contrast fabrication process and evaluate feasibility of both organic light emitting diode (OLED) and organic light emitting transistor (OLET). The proposed light emitting layer in this study is poly [2-methoxy-5- (2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV).

Finding the Acceleration and Speed of a Light-Emitting Object on an Inclined Plane with a Smartphone Light Sensor

ERIC Educational Resources Information Center

Kapucu, Serkan

2017-01-01

This study investigates how the acceleration and speed of a light-emitting object on an inclined plane may be determined using a smartphone's light sensor. A light-emitting object was released from the top of an inclined plane and its illuminance values were detected by a smartphone's light sensor during its subsequent motion down the plane. Using…

Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCarthy, M. A.; Liu, B.; Donoghue, E. P.

2011-01-01

Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

Method to generate high efficient devices which emit high quality light for illumination

DOEpatents

Krummacher, Benjamin C.; Mathai, Mathew; Choong, Vi-En; Choulis, Stelios A.

2009-06-30

An electroluminescent apparatus includes an OLED device emitting light in the blue and green spectrums, and at least one down conversion layer. The down conversion layer absorbs at least part of the green spectrum light and emits light in at least one of the orange spectra and red spectra.

Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

NASA Astrophysics Data System (ADS)

Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-03-01

Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

Atlas-based head modeling and spatial normalization for high-density diffuse optical tomography: in vivo validation against fMRI.

PubMed

Ferradal, Silvina L; Eggebrecht, Adam T; Hassanpour, Mahlega; Snyder, Abraham Z; Culver, Joseph P

2014-01-15

Diffuse optical imaging (DOI) is increasingly becoming a valuable neuroimaging tool when fMRI is precluded. Recent developments in high-density diffuse optical tomography (HD-DOT) overcome previous limitations of sparse DOI systems, providing improved image quality and brain specificity. These improvements in instrumentation prompt the need for advancements in both i) realistic forward light modeling for accurate HD-DOT image reconstruction, and ii) spatial normalization for voxel-wise comparisons across subjects. Individualized forward light models derived from subject-specific anatomical images provide the optimal inverse solutions, but such modeling may not be feasible in all situations. In the absence of subject-specific anatomical images, atlas-based head models registered to the subject's head using cranial fiducials provide an alternative solution. In addition, a standard atlas is attractive because it defines a common coordinate space in which to compare results across subjects. The question therefore arises as to whether atlas-based forward light modeling ensures adequate HD-DOT image quality at the individual and group level. Herein, we demonstrate the feasibility of using atlas-based forward light modeling and spatial normalization methods. Both techniques are validated using subject-matched HD-DOT and fMRI data sets for visual evoked responses measured in five healthy adult subjects. HD-DOT reconstructions obtained with the registered atlas anatomy (i.e. atlas DOT) had an average localization error of 2.7mm relative to reconstructions obtained with the subject-specific anatomical images (i.e. subject-MRI DOT), and 6.6mm relative to fMRI data. At the group level, the localization error of atlas DOT reconstruction was 4.2mm relative to subject-MRI DOT reconstruction, and 6.1mm relative to fMRI. These results show that atlas-based image reconstruction provides a viable approach to individual head modeling for HD-DOT when anatomical imaging is not available. Copyright © 2013. Published by Elsevier Inc.

Aluminum-nanodisc-induced collective lattice resonances: Controlling the light extraction in organic light emitting diodes

NASA Astrophysics Data System (ADS)

Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim R.; List-Kratochvil, Emil J. W.

2017-10-01

We examine aluminum-nanodisc-induced collective lattice resonances as a means to enhance the efficiency of organic light emitting diodes. Thus, nanodisc arrays were embedded in the hole transporting layer of a solution-processed phosphorescent organic blue-light emitting diode. Through extinction spectroscopy, we confirm the emergence of array-induced collective lattice resonances within the organic light emitting diode. Through finite-difference time domain simulations, we show that the collective lattice resonances yield an enhancement of the electric field intensity within the emissive layer. The effectiveness for improving the light generation and light outcoupling is demonstrated by electro-optical characterization, realizing a gain in a current efficiency of 35%.

An intraocular micro light-emitting diode device for endo-illumination during pars plana vitrectomy.

PubMed

Koelbl, Philipp S; Lingenfelder, Christian; Spraul, Christoph W; Kampmeier, Juergen; Koch, Frank Hj; Kim, Yong Keun; Hessling, Martin

2018-03-01

Development of a new, fiber-free, single-use endo-illuminator for pars plana vitrectomy as a replacement for fiber-based systems with external light sources. The hand-guided intraocularly placed white micro light-emitting diode is evaluated for its illumination properties and potential photochemical and thermal hazards. A micro light-emitting diode was used to develop a single-use intraocular illumination system. The light-source-on-tip device was implemented in a prototype with 23G trocar compatible outer diameter of 0.6 mm. The experimental testing was performed on porcine eyes. All calculations of possible photochemical and thermal hazards during the application of the intraocular micro light-emitting diode were calculated according to DIN EN ISO 15007-2: 2014. The endo-illuminator generated a homogeneous and bright illumination of the intraocular space. The color impression was physiologic and natural. Contrary to initial apprehension, the possible risk caused by inserting a light-emitting diode into the intraocular vitreous was much smaller when compared to conventional fiber-based illumination systems. The photochemical and thermal hazards allowed a continuous exposure time to the retina of at least 4.7 h. This first intraocular light source showed that a light-emitting diode can be introduced into the eye. The system can be built as single-use illumination system. This light-source-on-tip light-emitting diode-endo-illumination combines a chandelier wide-angle illumination with an adjustable endo-illuminator.

Organic light emitting devices for illumination

DOEpatents

Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S.

2010-02-16

An organic light emitting device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient that an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

Monte Carlo simulations of thermal comptonization process in a two-component advective flow around a neutron star

NASA Astrophysics Data System (ADS)

Bhattacharjee, Ayan; Chakrabarti, Sandip K.

2017-12-01

We explore spectral properties of a two-component advective flow around a neutron star. We compute the effects of thermal Comptonization of soft photons emitted from a Keplerian disc and the boundary layer of the neutron star by the post-shock region of a sub-Keplerian flow, formed due to the centrifugal barrier. The shock location Xs is also the inner edge of the Keplerian disc. We compute a series of realistic spectra assuming a set of electron temperatures of the post-shock region TCE, the temperature of the Normal BOundary Layer (NBOL) TNS of the neutron star and the shock location Xs. These parameters depend on the disc and halo accretion rates (\\dot{m}d and \\dot{m}h, respectively) that control the resultant spectra. We find that the spectrum becomes harder when \\dot{m}_h is increased. The spectrum is controlled strongly by TNS due to its proximity to the Comptonizing cloud since photons emitted from the NBOL cool down the post-shock region very effectively. We also show the evidence of spectral hardening as the inclination angle of the disc is increased.

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

PubMed

Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

2016-06-22

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

Thermoresponsive scattering coating for smart white LEDs.

PubMed

Bauer, Jurica; Verbunt, Paul P C; Lin, Wan-Yu; Han, Yang; Van, My-Phung; Cornelissen, Hugo J; Yu, Joan J H; Bastiaansen, Cees W M; Broer, Dirk J

2014-12-15

White light emitting diode (LED) systems, capable of lowering the color temperature of emitted light on dimming, have been reported in the literature. These systems all use multiple color LEDs and complex control circuitry. Here we present a novel responsive lighting system based on a single white light emitting LED and a thermoresponsive scattering coating. The coated LED automatically emits light of lower correlated color temperature (CCT) when the power is reduced. We also present results on the use of multiple phosphors in the white light LED allowing for the emission of warm white light in the range between 2900 K and 4150 K, and with a chromaticity complying with the ANSI standards (C78.377). This responsive warm white light LED-system with close-to-ideal emission characteristics is highly interesting for the lighting industry.

Light emitting elastomer compositions and method of use

DOEpatents

McElhanon, James R.; Zifer, Thomas; Whinnery, LeRoy L.

2004-11-23

There is provided a light emitting device comprising a plurality of triboluminescent particles dispersed throughout an elastomeric body and activated by deforming the body in order to transfer mechanical energy to some portion of the particles. The light emitted by these mechanically excited particles is collected and directed into a light conduit and transmitted to a detector/indicator means.

Cathodic-controlled and near-infrared organic upconverter for local blood vessels mapping

PubMed Central

Yuan, Chih-Hsien; Lee, Chih-Chien; Liu, Chun-Fu; Lin, Yun-Hsuan; Su, Wei-Cheng; Lin, Shao-Yu; Chen, Kuan-Ting; Li, Yan-De; Chang, Wen-Chang; Li, Ya-Ze; Su, Tsung-Hao; Liu, Yu-Hsuan; Liu, Shun-Wei

2016-01-01

Organic materials are used in novel optoelectronic devices because of the ease and high compatibility of their fabrication processes. Here, we demonstrate a low-driving-voltage cathodic-controlled organic upconverter with a mapping application that converts near-infrared images to produce images of visible blood vessels. The proposed upconverter has a multilayer structure consisting of a photosensitive charge-generation layer (CGL) and a phosphorescent organic light-emitting diode (OLED) for producing clear images with a high resolution of 600 dots per inch. In this study, temperature-dependent electrical characterization was performed to analyze the interfacial modification of the cathodic-controlled upconverter. The result shows that the upconverter demonstrated a high conversion efficiency of 3.46% because of reduction in the injection barrier height at the interface between the CGL and the OLED. PMID:27578199

Cathodic-controlled and near-infrared organic upconverter for local blood vessels mapping.

PubMed

Yuan, Chih-Hsien; Lee, Chih-Chien; Liu, Chun-Fu; Lin, Yun-Hsuan; Su, Wei-Cheng; Lin, Shao-Yu; Chen, Kuan-Ting; Li, Yan-De; Chang, Wen-Chang; Li, Ya-Ze; Su, Tsung-Hao; Liu, Yu-Hsuan; Liu, Shun-Wei

2016-08-31

Organic materials are used in novel optoelectronic devices because of the ease and high compatibility of their fabrication processes. Here, we demonstrate a low-driving-voltage cathodic-controlled organic upconverter with a mapping application that converts near-infrared images to produce images of visible blood vessels. The proposed upconverter has a multilayer structure consisting of a photosensitive charge-generation layer (CGL) and a phosphorescent organic light-emitting diode (OLED) for producing clear images with a high resolution of 600 dots per inch. In this study, temperature-dependent electrical characterization was performed to analyze the interfacial modification of the cathodic-controlled upconverter. The result shows that the upconverter demonstrated a high conversion efficiency of 3.46% because of reduction in the injection barrier height at the interface between the CGL and the OLED.

Novel Biomedical Devices Utilizing Light-Emitting Nanostructures

NASA Technical Reports Server (NTRS)

Goldman, Rachel S.

2004-01-01

As part of the NASA project, we are investigating the formation, properties, and performance of QD heterostructures, to be incorporated into a novel biomedical device for detecting bacteria and/or viruses in fluids on board space vehicles. We are presently synthesizing the epitaxial quantum dot structures using molecular beam epitaxy. We recently developed a method for controlling the arrangement of QDs, based upon a combination of buffer layer growth and controlled annealing sequences. This method is promising for producing arrangements of QDs with a locally well-controlled distribution of sizes. In the future, we plan to explore selective pre-patterning of the starting surface using focused ion-beam nanopatterning, which will enable us to precisely tune the compositions, sizes, and placement of the QDs, in order laterally tune the emission and detection wavelengths of QD based devices.

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

NASA Astrophysics Data System (ADS)

Zhang, Meng; Bhattacharya, Pallab; Guo, Wei; Banerjee, Animesh

2010-03-01

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 °C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1×1018 cm-3. The corresponding doping efficiency and hole mobility are ˜4.9% and 3.7 cm2/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λpeak=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swarnkar, Abhishek; Marshall, Ashley R.; Sanehira, Erin M.

Here, we show nanoscale phase stabilization of CsPbI 3 quantum dots (QDs) to low temperatures that can be used as the active component of efficient optoelectronic devices. CsPbI 3 is an all-inorganic analog to the hybrid organic cation halide perovskites, but the cubic phase of bulk CsPbI3 (..alpha..-CsPbI 3) -- the variant with desirable band gap -- is only stable at high temperatures. We also describe the formation of ..alpha..-CsPbI 3 QD films that are phase-stable for months in ambient air. The films exhibit long-range electronic transport and were used to fabricate colloidal perovskite QD photovoltaic cells with an open-circuitmore » voltage of 1.23 volts and efficiency of 10.77%. Furthermore, these devices function as light-emitting diodes with low turn-on voltage and tunable emission.« less

Green emitting phosphors and blends thereof

DOEpatents

Setlur, Anant Achyut; Siclovan, Oltea Puica; Nammalwar, Prasanth Kumar; Sathyanarayan, Ramesh Rao; Porob, Digamber G.; Chandran, Ramachandran Gopi; Heward, William Jordan; Radkov, Emil Vergilov; Briel, Linda Jane Valyou

2010-12-28

Phosphor compositions, blends thereof and light emitting devices including white light emitting LED based devices, and backlights, based on such phosphor compositions. The devices include a light source and a phosphor material as described. Also disclosed are phosphor blends including such a phosphor and devices made therefrom.

Nanocluster-based white-light-emitting material employing surface tuning

DOEpatents

Wilcoxon, Jess P [Albuquerque, NM; Abrams, Billie L [Albuquerque, NM; Thoma, Steven G [Albuquerque, NM

2007-06-26

A method for making a nanocrystal-based material capable of emitting light over a sufficiently broad spectral range to appear white. Surface-modifying ligands are used to shift and broaden the emission of semiconductor nanocrystals to produce nanoparticle-based materials that emit white light.

Controlling reabsorption effect of bi-color CdSe quantum dots-based white light-emitting diodes

NASA Astrophysics Data System (ADS)

Siao, Cyuan-Bin; Chung, Shu-Ru; Wang, Kuan-Wen

2017-08-01

The colloidal semiconductor quantum dots (QDs) have the potentials to be used in white light-emitting diode (WLED) as a down-converting component to replace incandescent lamps, because the traditional WLED composed of Y3Al5O12:Ce3+ (YAG:Ce) phosphor lack of red color emissions and shows low color quality. Among various QDs, CdSe has been extensively studied because it possesses attractive characteristics such as high quantum yields (QYs), narrow emission spectral bandwidth, as well as size-tunable optical characteristics. However, in order to enhance the color rendering index (CRI) of WLED, blending materials with different emission wavelengths has been used frequently. Unfortunately, these procedures are complex and time-consuming, and the emission energy of smaller QDs can be reabsorbed by larger QDs, resulting in decreasing the excitation intensity in yellowish-green region. Therefore, in this study, in order to decrease the reabsorption effect and to simplify the procedures, we have demonstrated a facile thermal pyrolyzed route to prepare bicolor CdSe QDs with dual-wavelengths. The emission wavelengths, particle sizes, and QYs of QDs can be tuned from 537/595 to 537/602 nm, 2.59/3.92 to 2.59/4.01 nm, and 27 to 40 %, for GR1 to 3 samples, respectively when the amount of Se precursor is decreased from 1.5 to 0.75 mmol. Meanwhile, the area ratio of green to red (Ag/Ar) in fluorescence spectra is gradually increased, due to the increase in growth rate, and decrease in nuclei formation in red emission. The GR1, GR2, and GR3 QDs are then encapsulated by convert types to form the LED, in which the QDs are deposited on the blue-emitting InGaN LED chip (λem = 450 nm). After encapsulation, the devices properties of Commission International d'Eclairage (CIE) chromaticity and Ag/Ar area ratio are (0.40, 0.24), 0.28/1, (0.40, 0.31), 0.52/1, and (0.40, 0.38), 1.02/1, respectively for GR1, GR2, and GR3. The results show that the green emission intensity are strongly reabsorbed by red emission, as the Ag/Ar area ratios are gradually increased and the CIEs are dramatically shift to white light region, suggesting that the Se amount not only can tune the red emission intensity but also can decrease the reabsorption effect. Based on the above results, the GR3 is suitable to be applied for WLED against the reabsorption effect. Besides, when the GR3 is blended with UV resin of 30 wt. % to prepare the WLED, the CIE located at (0.35, 0.34) is applied as backlight source, providing 126 % color gamut in sRGB standard. As a result, by simply adjusting the concentration of Se precursor, QDs with dual-wavelengths can be prepared and the reabsorption effect can be avoided to show promising lighting properties for the application in WLED.

Facile synthesis of blue-emitting carbon dots@mesoporous silica composite spheres

NASA Astrophysics Data System (ADS)

Guo, Ziying; Zhu, Zhenpeng; Zhang, Xinguo; Chen, Yibo

2018-02-01

This paper reported a facile and effective approach towards high-efficient composite luminophores by embedding blue-emitting N-doped carbon dots into spherical SiO2 matrix (CDs@SiO2). Mesoporous silica microspheres (r-CDs@MSN) with strong luminescence were synthesized by removing CTAB templates in CDs@SiO2 using reflux with acetone. The r-CDs@MSN possess a spherical morphology with smooth surface and a diameter of 130 nm, while it exhibits an excitation-independent blue emission peak at 440 nm with an internal quantum yield of 21.5%. BET result shows that the corresponding surface area and adsorption total pore volume are 156.27 m2/g and 0.682 cm3/g, which is suitable for the drugs loading and release. The results indicate that r-CDs@MSN might act as a potential fluorescent drug carrier.

Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barettin, Daniele, E-mail: Daniele.Barettin@uniroma2.it; Auf der Maur, Matthias; De Angelis, Roberta

2015-03-07

We report on numerical simulations of InP surface lateral quantum-dot molecules on In{sub 0.48}Ga{sub 0.52 }P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateralmore » quantum-dot molecules. Continuum electromechanical, k{sup →}·p{sup →} bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.« less

Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

NASA Astrophysics Data System (ADS)

Barettin, Daniele; Auf der Maur, Matthias; De Angelis, Roberta; Prosposito, Paolo; Casalboni, Mauro; Pecchia, Alessandro

2015-03-01

We report on numerical simulations of InP surface lateral quantum-dot molecules on In0.48Ga0.52P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k →.p → bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.

Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots

NASA Astrophysics Data System (ADS)

Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

2015-03-01

Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices.Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices. Electronic supplementary information (ESI) available: Detailed description of synthesis of CdZnS/ZnS, CIS/ZnS QDs and ZnO NPs; TEM images of CdZnS/ZnS and CIS/ZnS QDs; voltage-dependent luminance (CE variations of blue CdZnS/ZnS and yellow CIS/ZnS monochromatic QLEDs; EL spectra and energy band diagram of bilayered QD EML-based QLED with a stacking sequence of CdZnS/ZnS//CIS/ZnS QD; normalized EL spectra of CIS/ZnS//CdZnS/ZnS QD-bilayered QLEDs; comparison of current density of monochromatic QLEDs and bicolored white QLEDs; and voltage-dependent luminance (CE variations of CIS/ZnS QLED fabricated through 150 °C-EML baking. See DOI: 10.1039/c5nr00426h

Optical manipulation of electron spin in quantum dot systems

NASA Astrophysics Data System (ADS)

Villas-Boas, Jose; Ulloa, Sergio; Govorov, Alexander

2006-03-01

Self-assembled quantum dots (QDs) are of particular interest for fundamental physics because of their similarity with atoms. Coupling two of such dots and addressing them with polarized laser light pulses is perhaps even more interesting. In this paper we use a multi-exciton density matrix formalism to model the spin dynamics of a system with single or double layers of QDs. Our model includes the anisotropic electron-hole exchange in the dots, the presence of wetting layer states, and interdot tunneling [1]. Our results show that it is possible to switch the spin polarization of a single self-assembled quantum dot under elliptically polarized light by increasing the laser intensity. In the nonlinear mechanism described here, intense elliptically polarized light creates an effective exchange channel between the exciton spin states through biexciton states, as we demonstrate by numerical and analytical methods. We further show that the effect persists in realistic ensembles of dots, and we propose alternative ways to detect it. We also extend our study to a double layer of quantum dots, where we find a competition between Rabi frequency and tunneling oscillations. [1] J. M. Villas-Boas, S. E. Ulloa, and A. O. Govorov, Phys. Rev. Lett. 94, 057404 (2005); Phys. Rev. B 69, 125342 (2004).