Prototype Compton imager for special nuclear material

NASA Astrophysics Data System (ADS)

Wulf, Eric A.; Phlips, Bernard F.; Kurfess, James D.; Novikova, Elena I.; Fitzgerald, Carrie

2006-05-01

Compton imagers offer a method for passive detection of nuclear material over background radiation. A prototype Compton imager has been constructed using 8 layers of silicon detectors. Each layer consists of a 2×2 array of 2 mm thick cross-strip double-sided silicon detectors with active areas of 5.7 × 5.7 cm2 and 64 strips per side. The detectors are daisy-chained together in the array so that only 256 channels of electronics are needed to read-out each layer of the instrument. This imager is a prototype for a large, high-efficiency Compton imager that will meet operational requirements of Homeland Security for detection of shielded uranium. The instrument can differentiate between different radioisotopes using the reconstructed gamma-ray energy and can also show the location of the emissions with respect to the detector location. Results from the current instrument as well as simulations of the next generation instrument are presented.

Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

La Rosa, Alessandro; /CERN; Boscardin, M.

2012-04-04

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3)more » at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.« less

Method for making alignment-enhancing feed-through conductors for stackable silicon-on-sapphire

NASA Technical Reports Server (NTRS)

Anthony, Thomas R. (Inventor)

1985-01-01

Alignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process of this invention involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.

Multi-pinhole SPECT Imaging with Silicon Strip Detectors

PubMed Central

Peterson, Todd E.; Shokouhi, Sepideh; Furenlid, Lars R.; Wilson, Donald W.

2010-01-01

Silicon double-sided strip detectors offer outstanding instrinsic spatial resolution with reasonable detection efficiency for iodine-125 emissions. This spatial resolution allows for multiple-pinhole imaging at low magnification, minimizing the problem of multiplexing. We have conducted imaging studies using a prototype system that utilizes a detector of 300-micrometer thickness and 50-micrometer strip pitch together with a 23-pinhole collimator. These studies include an investigation of the synthetic-collimator imaging approach, which combines multiple-pinhole projections acquired at multiple magnifications to obtain tomographic reconstructions from limited-angle data using the ML-EM algorithm. Sub-millimeter spatial resolution was obtained, demonstrating the basic validity of this approach. PMID:20953300

Record high efficiency of screen-printed silicon aluminum back surface field solar cell: 20.29%

NASA Astrophysics Data System (ADS)

Kim, Ki Hyung; Park, Chang Sub; Doo Lee, Jae; Youb Lim, Jong; Yeon, Je Min; Kim, Il Hwan; Lee, Eun Joo; Cho, Young Hyun

2017-08-01

We have achieved a record high cell efficiency of 20.29% for an industrial 6-in. p-type monocrystalline silicon solar cell with a full-area aluminum back surface field (Al-BSF) by simply modifying the cell structure and optimizing the process with the existing cell production line. The cell efficiency was independently confirmed by the Solar Energy Research Institute of Singapore (SERIS). To increase the cell efficiency, for example, in four busbars, double printing, a lightly doped emitter with a sheet resistance of 90 to 100 Ω/□, and front surface passivation by using silicon oxynitride (SiON) on top of a silicon nitride (SiN x ) antireflection layer were adopted. To optimize front side processing, PC1D simulation was carried out prior to cell fabrication. The resulting efficiency gain is 0.64% compared with that in the reference cells with three busbars, a single antireflection coating layer, and a low-sheet-resistance emitter.

Tunable all-optical photonic crystal channel drop filter for DWDM systems

NASA Astrophysics Data System (ADS)

Habibiyan, H.; Ghafoori-Fard, H.; Rostami, A.

2009-06-01

In this paper we propose a tunable channel drop filter in a two-dimensional photonic crystal, based on coupled-cavity waveguides with alternating small and large defects and an electromagnetically induced transparency phenomenon. By utilizing this phenomenon a narrower linewidth is obtained and also the frequency of the dropped signal becomes tunable. Simulation results show that the proposed filter is suitable for dense wavelength-division multiplexing (DWDM) systems with 0.8 nm channel spacing. Using this novel component, two ultrasmall eight-channel double-sided and single-sided demultiplexers are introduced. The properties of these devices are investigated using the finite-difference time-domain method. For the single-sided device, transmission loss is 1.5 ± 0.5 dB, the cross-talk level between adjacent channels is better than -18 dB and the average 3 dB optical passband is 0.36 nm. Using planar silicon-on-insulator technology, the physical area for the single-sided component is 700 µm2 and for the double-sided component is 575 µm2. To the best of our knowledge, these are the smallest all-optical demultiplexers with this spectral resolution reported to date. Malfunction of the proposed device due to fabrication errors is modeled and its tunable characteristic is demonstrated.

Surface chemical structure for soft contact lenses as a function of polymer processing.

PubMed

Grobe, G L; Valint, P L; Ammon, D M

1996-09-01

The surface chemistry and topography of cast-molded Etafilcon-A and doubled-sided lathed Etafilcon-A soft contact lenses were determined to be significantly different. The variations in surface chemical and morphologic structure between the two lenses were the result of contact lens manufacturing methods. The surface of the cast-molded Etafilcon-A had a consistently less rough surface compared to the doubled sided lathed Etafilcon-A as determined by atomic force microscopy. The surface of the doubled sided lathed Etafilcon-A contained primarily silicone and wax contamination in addition to minute amounts of HEMA. The cast-molded Etafilcon-A had an elemental and chemical content which was consistent with the polymer stoichiometry. Contact angle wettability profiles revealed inherent wettability differences between the two lenses types. The cast-molded Etafilcon-A had an inherently greater water wettability, polarity, and critical surface tension. This means that these two lenses cannot be compared as similar or identical lens materials in terms of surface composition. The manufacturing method used to produce a soft contact lens directly determines the surface elemental and chemical structure as well as the morphology of the finished lens material. These results suggest possible differences in the clinical comfort, spoilage, and lubricity felt during patient wear.

A Silicon SPECT System for Molecular Imaging of the Mouse Brain.

PubMed

Shokouhi, Sepideh; Fritz, Mark A; McDonald, Benjamin S; Durko, Heather L; Furenlid, Lars R; Wilson, Donald W; Peterson, Todd E

2007-01-01

We previously demonstrated the feasibility of using silicon double-sided strip detectors (DSSDs) for SPECT imaging of the activity distribution of iodine-125 using a 300-micrometer thick detector. Based on this experience, we now have developed fully customized silicon DSSDs and associated readout electronics with the intent of developing a multi-pinhole SPECT system. Each DSSD has a 60.4 mm × 60.4 mm active area and is 1 mm thick. The strip pitch is 59 micrometers, and the readout of the 1024 strips on each side gives rise to a detector with over one million pixels. Combining four high-resolution DSSDs into a SPECT system offers an unprecedented space-bandwidth product for the imaging of single-photon emitters. The system consists of two camera heads with two silicon detectors stacked one behind the other in each head. The collimator has a focused pinhole system with cylindrical-shaped pinholes that are laser-drilled in a 250 μm tungsten plate. The unique ability to collect projection data at two magnifications simultaneously allows for multiplexed data at high resolution to be combined with lower magnification data with little or no multiplexing. With the current multi-pinhole collimator design, our SPECT system will be capable of offering high spatial resolution, sensitivity and angular sampling for small field-of-view applications, such as molecular imaging of the mouse brain.

Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography

NASA Astrophysics Data System (ADS)

Van Elburg, Devin J.; Noble, Scott D.; Hagey, Simone; Goertzen, Andrew L.

2018-03-01

Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials (‘100MP’, ‘A100’, and ‘GPA’) were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation compared to SiG occurs, double-sided tapes are convenient alternatives for optical coupling materials since they diffuse light intrinsically, acting as a light guide, offer mechanical support and durability, are easily applied and removed from scintillators/photodetectors, and are relatively inexpensive and readily available.

Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography.

PubMed

Van Elburg, Devin J; Noble, Scott D; Hagey, Simone; Goertzen, Andrew L

2018-02-26

Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials ('100MP', 'A100', and 'GPA') were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation compared to SiG occurs, double-sided tapes are convenient alternatives for optical coupling materials since they diffuse light intrinsically, acting as a light guide, offer mechanical support and durability, are easily applied and removed from scintillators/photodetectors, and are relatively inexpensive and readily available.

The Silicon Tracking System of the CBM experiment at FAIR

NASA Astrophysics Data System (ADS)

Teklishyn, Maksym

2018-03-01

The Silicon Tracking System (STS) is the central detector in the Compressed Baryonic Matter (CBM) experiment at FAIR. Operating in the 1Tm dipole magnetic field, the STS will enable pile-up free detection and momentum measurement of the charged particles originating from beam-target nuclear interactions at rates up to 10 MHz. The STS consists of 8 tracking stations based on double-sided silicon micro-strip sensors equipped with fast, self-triggering read-out electronics. With about two million read-out channels, the STS will deliver a high-rate stream of time-stamped data that is transferred to a computing farm for on-line event determination and analysis. The functional building block is a detector module consisting of a sensor, micro-cables and two front-end electronics boards. In this contribution, the development status of the STS components and the system integration is discussed and an outlook on the detector construction is given.

CsI-Silicon Particle detector for Heavy ions Orbiting in Storage rings (CsISiPHOS)

NASA Astrophysics Data System (ADS)

Najafi, M. A.; Dillmann, I.; Bosch, F.; Faestermann, T.; Gao, B.; Gernhäuser, R.; Kozhuharov, C.; Litvinov, S. A.; Litvinov, Yu. A.; Maier, L.; Nolden, F.; Popp, U.; Sanjari, M. S.; Spillmann, U.; Steck, M.; Stöhlker, T.; Weick, H.

2016-11-01

A heavy-ion detector was developed for decay studies in the Experimental Storage Ring (ESR) at the GSI Helmholtz Centre for Heavy Ion Research in Darmstadt, Germany. This detector serves as a prototype for the in-pocket particle detectors for future experiments with the Collector Ring (CR) at FAIR (Facility for Antiproton and Ion Research). The detector includes a stack of six silicon pad sensors, a double-sided silicon strip detector (DSSD), and a CsI(Tl) scintillation detector. It was used successfully in a recent experiment for the detection of the β+-decay of highly charged 142Pm60+ ions. Based on the ΔE / E technique for particle identification and an energy resolution of 0.9% for ΔE and 0.5% for E (Full Width at Half Maximum (FWHM)), the detector is well-suited to distinguish neighbouring isobars in the region of interest.

Using silicone gel sheet for the treatment of facial telangiectasias with sclerotherapy.

PubMed

Misirlioglu, Aykut; Gideroglu, Kaan; Akan, Mithat; Akoz, Tayfun

2004-03-01

Telangiectasias are superficial cutaneous vessels that are visible to human eye and are present as a dilated venule, capillary, or arteriole. They are a common cause of concern, especially when located in face. Sclerotherapy is among the treatment alternatives, but facial telangiectasias are less responsive than those located on the leg. To show the effectiveness of silicone gel sheet in improving the results obtained by sclerotherapy in facial telangiectasias. Between 1998 and 2003, 32 patients were treated with sclerotherapy and silicone gel sheet (group 1). Twenty-six patients were treated with sclerotherapy and cotton ball (group 2), and 30 patients were treated only sclerotherapy (group 3). Patients were evaluated for 12 weeks for the degree of improvement and side effects. All complications, side effects, and number of sessions were also recorded at each follow-up visit. The number of sessions is limited to six. After the final follow-up visit, the photographs taken of each treatment site at baseline and at final visit were reviewed in a double-blinded manner based on a 0 to 4 scale by two physicians. Fifty one of the 88 patients showed improvement totally. In the silicone sheet-sclerotherapy group, 22 of the 36 patients showed improvement. In the sclerotherapy-cotton ball group, 14 of the 26 patients showed improvement, and in the sclerotherapy-only group, 15 of the 30 patients showed improvement completely within the 12 weeks. The patients treated with sclerotherapy-silicone gel sheet (group 1) had more improvement than the other groups. Combining silicone gel sheeting to sclerotherapy increases the success rate in treating facial telangiectasias, especially facial subunits, which have bone support.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

The use of cosmic-ray muons in the energy calibration of the Beta-decay Paul Trap silicon-detector array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirsh, T. Y.; Perez Galvan, A.; Burkey, M.

This article presents an approach to calibrate the energy response of double-sided silicon strip detectors (DSSDs) for low-energy nuclear-science experiments by utilizing cosmic-ray muons. For the 1-mm-thick detectors used with the Beta-decay Paul Trap, the minimum-ionizing peak from these muons provides a stable and time-independent in situ calibration point at around 300 keV, which supplements the calibration data obtained above 3 MeV from sources. The muon-data calibration is achieved by comparing experimental spectra with detailed Monte Carlo simulations performed using GEANT4 and CRY codes. This additional information constrains the calibration at lower energies, resulting in improvements in quality and accuracy.

The use of cosmic-ray muons in the energy calibration of the Beta-decay Paul Trap silicon-detector array

NASA Astrophysics Data System (ADS)

Hirsh, T. Y.; Pérez Gálvan, A.; Burkey, M. T.; Aprahamian, A.; Buchinger, F.; Caldwell, S.; Clark, J. A.; Gallant, A. T.; Heckmaier, E.; Levand, A. F.; Marley, S. T.; Morgan, G. E.; Nystrom, A.; Orford, R.; Savard, G.; Scielzo, N. D.; Segel, R.; Sharma, K. S.; Siegl, K.; Wang, B. S.

2018-04-01

This article presents an approach to calibrate the energy response of double-sided silicon strip detectors (DSSDs) for low-energy nuclear-science experiments by utilizing cosmic-ray muons. For the 1-mm-thick detectors used with the Beta-decay Paul Trap, the minimum-ionizing peak from these muons provides a stable and time-independent in situ calibration point at around 300 keV, which supplements the calibration data obtained above 3 MeV from α sources. The muon-data calibration is achieved by comparing experimental spectra with detailed Monte Carlo simulations performed using GEANT4 and CRY codes. This additional information constrains the calibration at lower energies, resulting in improvements in quality and accuracy.

Investigation of the thickness non-uniformity of the very thin silicon-strip detectors

NASA Astrophysics Data System (ADS)

Liu, Qiang; Ye, Yanlin; Li, Zhihuan; Lin, Chengjian; Jia, Huiming; Ge, Yucheng; Li, Qite; Lou, Jianling; Yang, Xiaofei; Yang, Biao; Feng, Jun; Zang, Hongliang; Chen, Zhiqiang; Liu, Yang; Liu, Wei; Chen, Sidong; Yu, Hanzhou; Li, Jingjing; Zhang, Yun; Yang, Feng; Yang, Lei; Ma, Nanru; Sun, Lijie; Wang, Dongxi

2018-07-01

The properties of some very thin (∼ 20 μm) large-area Single-sided Silicon-Strip Detectors (SSSDs) were investigated by using the 12C-particles elastically scattered from a Au target. In the detection system, each thin SSSD was installed in front of a thick (300 μm or 500 μm) Double-sided Silicon-Strip Detector (DSSD) to form a ΔE - E particle-telescope. The energy calibration of these detectors was realized by varying the beam energy and also by the irradiation from a three-component α-particle source. The thickness distribution each SSSD is precisely determined from the energy loss in the thin layer, which was independently measured by the corresponding DSSD. It is found that, for the SSSD with the nominal thicknesses of ∼ 20 μm, the real thickness may vary by several μm over the active area. The reason for this large non-uniformity still needs to be investigated. For the present application, this non-uniformity could be corrected according to the known pixel-thickness. This correction allows to restore a good particle identification (PID) performance for the entire large-area detector, the importance of which is demonstrated by an example of measuring the cluster-decays of the highly-excited resonant states in 16O.

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

NASA Astrophysics Data System (ADS)

Barbier, G.; Cadoux, F.; Clark, A.; Endo, M.; Favre, Y.; Ferrere, D.; Gonzalez-Sevilla, S.; Hanagaki, K.; Hara, K.; Iacobucci, G.; Ikegami, Y.; Jinnouchi, O.; La Marra, D.; Nakamura, K.; Nishimura, R.; Perrin, E.; Seez, W.; Takubo, Y.; Takashima, R.; Terada, S.; Todome, K.; Unno, Y.; Weber, M.

2014-04-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 1034 cm-2 s-1. For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described.

Color sensitive silicon photomultiplers with micro-cell level encoding for DOI PET detectors

NASA Astrophysics Data System (ADS)

Shimazoe, Kenji; Koyama, Akihiro; Takahashi, Hiroyuki; Ganka, Thomas; Iskra, Peter; Marquez Seco, Alicia; Schneider, Florian; Wiest, Florian

2017-11-01

There have been many studies on Depth Of Interaction (DOI) identification for high resolution Positron Emission Tomography (PET) systems, including those on phoswich detectors, double-sided readout, light sharing methods, and wavelength discrimination. The wavelength discrimination method utilizes the difference in wavelength of stacked scintillators and requires a color sensitive photodetector. Here, a new silicon photomultiplier (SiPM) coupled to a color filter (colorSiPM) was designed and fabricated for DOI detection. The fabricated colorSiPM has two anode readouts that are sensitive to blue and green color. The colorSiPM's response and DOI identification capability for stacked GAGG and LYSO crystals are characterized. The fabricated colorSiPM is sensitive enough to detect a peak of 662 keV from a 137 Cs source.

Development of double-sided silicon strip detectors for solar hard x-ray observation

NASA Astrophysics Data System (ADS)

Saito, Shinya; Ishikawa, Shin-Nosuke; Watanabe, Shin; Odaka, Hirokazu; Sugimoto, Soichiro; Fukuyama, Taro; Kokubun, Motohide; Takahashi, Tadayuki; Terada, Yukikatsu; Tajima, Hiroyasu; Tanaka, Takaaki; Krucker, Säm; Christe, Steven; McBride, Steve; Glesener, Lindsay

2010-07-01

The Focusing Optics X-ray Solar Imager (FOXSI) is a rocket experiment scheduled for January 2011 launch. FOXSI observes 5 - 15 keV hard X-ray emission from quiet-region solar flares in order to study the acceleration process of electrons and the mechanism of coronal heating. For observing faint hard X-ray emission, FOXSI uses focusing optics for the first time in solar hard X-ray observation, and attains 100 times higher sensitivity than RHESSI, which is the present solar hard X-ray observing satellite. Now our group is working on developments of both Double-sided Silicon Strip Detector (DSSD) and read-out analog ASIC "VATA451" used for FOXSI. Our DSSD has a very fine strip pitch of 75 μm, which has sufficient position resolution for FOXSI mirrors with angular resolution (FWHM) of 12 arcseconds. DSSD also has high spectral resolution and efficiency in the FOXSI's energy range of 5 - 15 keV, when it is read out by our 64-channel analog ASIC. In advance of the FOXSI launch, we have established and tested a setup of 75 μm pitch DSSD bonded with "VATA451" ASICs. We successfully read out from almost all the channels of the detector, and proved ability to make a shadow image of tungsten plate. We also confirmed that our DSSD has energy resolution (FWHM) of 0.5 keV, lower threshold of 5 keV, and position resolution less than 63 μm. These performance satisfy FOXSI's requirements.

The PAMELA experiment on satellite and its capability in cosmic rays measurements

NASA Astrophysics Data System (ADS)

Adriani, O.; Ambriola, M.; Barbarino, G.; Barbier, L. M.; Bartalucci, S.; Bazilevskaja, G.; Bellotti, R.; Bertazzoni, S.; Bidoli, V.; Boezio, M.; Bogomolov, E.; Bonechi, L.; Bonvicini, V.; Boscherini, M.; Bravar, U.; Cafagna, F.; Campana, D.; Carlson, P.; Casolino, M.; Castellano, M.; Castellini, G.; Christian, E. R.; Ciacio, F.; Circella, M.; D'Alessandro, R.; De Marzo, C. N.; De Pascale, M. P.; Finetti, N.; Furano, G.; Gabbanini, A.; Galper, A. M.; Giglietto, N.; Grandi, M.; Grigorjeva, A.; Guarino, F.; Hof, M.; Koldashov, S. V.; Korotkov, M. G.; Krizmanic, J. F.; Krutkov, S.; Lund, J.; Marangelli, B.; Marino, L.; Menn, W.; Mikhailov, V. V.; Mirizzi, N.; Mitchell, J. W.; Mocchiutti, E.; Moiseev, A. A.; Morselli, A.; Mukhametshin, R.; Ormes, J. F.; Osteria, G.; Ozerov, J. V.; Papini, P.; Pearce, M.; Perego, A.; Piccardi, S.; Picozza, P.; Ricci, M.; Salsano, A.; Schiavon, P.; Scian, G.; Simon, M.; Sparvoli, R.; Spataro, B.; Spillantini, P.; Spinelli, P.; Stephens, S. A.; Stochaj, S. J.; Stozhkov, Y.; Straulino, S.; Streitmatter, R. E.; Taccetti, F.; Tesi, M.; Vacchi, A.; Vannuccini, E.; Vasiljev, G.; Vignoli, V.; Voronov, S. A.; Yurkin, Y.; Zampa, G.; Zampa, N.

2002-02-01

The PAMELA& equipment will be assembled in 2001 and installed on board the Russian satellite Resurs. PAMELA is conceived mainly to study the antiproton and positron fluxes in cosmic rays up to high energy (190GeV for p¯ and 270GeV for e+) and to search antinuclei, up to 30GeV/n, with a sensitivity of 10-7 in the He/He ratio. The PAMELA telescope consists of: a magnetic spectrometer made up of a permanent magnet system equipped with double sided microstrip silicon detectors; a transition radiation detector made up of active layers of proportional straw tubes interleaved with carbon fibre radiators; and a silicon-tungsten imaging calorimeter made up of layers of tungsten absorbers and silicon detector planes. A time-of-flight system and anti-coincidence counters complete the PAMELA equipment. In the past years, tests have been done on each subdetector of PAMELA; the main results are presented and their implications on the anti-particles identification capability in cosmic rays are discussed here.

Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

NASA Astrophysics Data System (ADS)

Ghosh, P.

2015-03-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported.

Residual strain effects on large aspect ratio micro-diaphragms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hijab, R.S.; Muller, R.S.

1988-09-30

Highly compliant, large aspect ratio diaphragms for use in low-pressure, capacitive-readout sensors, have been investigated. In such structures, unrelaxed strain in the diaphragms can radically alter mechanical behavior. Although strain can be reduced by thermal annealing, it usually reaches a remnant irreducible minimum. The purpose of this paper is to describe techniques that result in low-strain materials and that reduce the effects of residual strain in micro-diaphragms. Square polysilicon grilles and perforated diaphragms made from both single and double polysilicon layers and from single-crystal silicon, with aspect ratios (side/thickness) of up to 1000 and very low compressive strain ({approx}6 {times}more » 10{sup {minus}5}), have been fabricated. Strain reduction is achieved by combining thermal annealing with one of two mechanical design techniques. The first technique makes use of a series of cantilever beams to support the diaphragms. In a second procedure, corrugated surfaces in thinned membranes of single-crystal silicon are formed. The corrugations result from the use of boron doping and anisotropic silicon etching. In both of these techniques to produce low-strain diaphragms, an etched cavity is purposely formed in the substrate crystal below them. Only one-sided processing of wafers is employed, thus aiding reproducibility and providing ease of compatibility with an MOS process. A fast-etching sacrificial-support layer (phosphorus-doped CVD oxide) is used. 4 refs., 10 figs.« less

A wide-band 760-GHz planar integrated Schottky receiver

NASA Technical Reports Server (NTRS)

Gearhart, Steven S.; Hesler, Jeffrey; Bishop, William L.; Crowe, Thomas W.; Rebeiz, Gabriel M.

1993-01-01

A wideband planar integrated heterodyne receiver has been developed for use at submillimeter-wave to FIR frequencies. The receiver consists of a log-periodic antenna integrated with a planar 0.8-micron GaAs Schottky diode. The monolithic receiver is placed on a silicon lens and has a measured room temperature double side-band conversion loss and noise temperature of 14.9 +/- 1.0 dB and 8900 +/- 500 K, respectively, at 761 GHz. These results represent the best performance to date for room temperature integrated receivers at this frequency.

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

DOEpatents

Holland, Stephen Edward

2000-02-15

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

Is the side with the best masticatory performance selected for chewing?

PubMed

Rovira-Lastra, Bernat; Flores-Orozco, Elan Ignacio; Salsench, Juan; Peraire, Maria; Martinez-Gomis, Jordi

2014-12-01

This study assessed the degree of relationship between masticatory laterality and lateral asymmetry of masticatory performance using silicon pieces enclosed in a latex bag. Forty-two young adults with natural dentition participated in this cross-sectional, observational study. They performed four different masticatory assays, each consisting of five trials of chewing three pieces of silicon for 20 cycles. In one assay, they were asked to masticate unbagged silicon free-style, whilst in the three other assays they were asked to masticate bagged silicon free-style, unilaterally on the right-hand side and unilaterally on the left-hand side. The preferred chewing side was determined by calculating the asymmetry index for both the free-style assays. Masticatory performance was determined by sieving the silicon particles and the cycle duration was also recorded. Data were analysed using independent samples or paired t-test and linear regression. Masticatory function using the bagged silicon was similar to that using the unbagged silicon. A significant and positive relationship was observed between the preferred chewing side expressed as the asymmetry index and the side with better masticatory performance. Alternate unilateral chewers demonstrated better masticatory performance than unilateral chewers. However, when free-style and unilateral chewing were compared for each subject, unilateral chewing was found to be as efficient as - or even more efficient than - free-style chewing. There is a positive association between the preferred chewing side and the more efficient side. Alternate unilateral mastication per se does not promote better masticatory performance than consistently unilateral mastication. Copyright © 2014 Elsevier Ltd. All rights reserved.

Use of double pigtail stent in hypospadias surgery.

PubMed

Chang, Paul C Y; Yeh, Ming-Lun; Chao, Chun-Chih; Chang, Chi-Jen

2011-01-01

Various types and materials of stents have been used for urinary diversion in hypospadias surgery. We evaluated whether double pigtail stents are superior to straight silicone stents. We conducted a retrospective chart review of all patients who underwent hypospadias surgery with straight silicone or double pigtail stents between November 1997 and October 2005. Comparisons were made between the two groups specifically with regard to the complication rates. A total of 86 patients were included. The complication rates in patients who received double pigtail stents were significantly reduced as compared with those who received straight silicon stents. There was less wound disruption associated with early stent dislodgement in the double pigtail group compared with the straight silicone group (3.2%vs. 17.4%, p< 0.05). The rate of urethrocutaneous fistula was also lower in the double pigtail stent group (12.7%vs. 30.4%). Subjectively, there was also improved patient comfort and parent anxiety in the double pigtail stent group. Double pigtail stent is a suitable material for urinary diversion in hypospadias surgery. It not only reduces patient discomfort, but also decreases complication rates in hypospadias surgery. Copyright © 2011 Asian Surgical Association. Published by Elsevier B.V. All rights reserved.

Temperature and color management of silicon solar cells for building integrated photovoltaic

NASA Astrophysics Data System (ADS)

Amara, Mohamed; Mandorlo, Fabien; Couderc, Romain; Gerenton, Félix; Lemiti, Mustapha

2018-01-01

Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

Novel mid-infrared silicon/germanium detector concepts

NASA Astrophysics Data System (ADS)

Presting, Hartmut; Konle, Johannes; Hepp, Markus; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf; Corbin, Elizabeth A.; Jaros, Milan

2000-10-01

Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures are grown by molecular beam epitaxy on double-sided polished (100)Si substrates for mid-IR (3 to 5 micrometers and 8 to 12 micrometers ) detection. The samples are characterized by secondary ion mass spectroscopy, x-ray diffraction, and absorption measurements. Single mesa detectors are fabricated as well as large-area focal plane arrays with 256 X 256 pixels using standard Si integrated processing techniques. The detectors, based on heterointernal photo-emission (HIP) of photogenerated holes from a heavily p-doped (p++ approximately 5 X 1020 cm-3) SiGe QW into an undoped silicon layer, operate at 77 K. Various novel designs of the SiGe HIP's such as Ge- and B-grading, double- and multi-wells, are realized; in addition, thin doping setback layers between the highly doped well and the undoped Si layer are introduced. The temperature dependence of dark currents and photocurrents are measured up to 225 K. In general, we observe broad photoresponse curves with peak external quantum efficiencies, up to (eta) ext approximately 0.5% at 77 K and 4(mu) , detectivities up to 8 X 1011 cm(root)Hz/W are obtained. We demonstrate that by varying the thickness, Ge content, and doping level of the single- and the multi-QWs of SiGe HIP detectors, the photoresponse peak and the cutoff of the spectrum can be tuned over a wide wavelength range. The epitaxial versatility of the Si/SiGe system enables a tailoring of the photoresponse spectrum which demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

Space qualification tests of the PAMELA instrument

NASA Astrophysics Data System (ADS)

Sparvoli, R.; Basili, A.; Bencardino, R.; Casolino, M.; de Pascale, M. P.; Furano, G.; Menicucci, A.; Minori, M.; Morselli, A.; Picozza, P.; Wischnewski, R.; Bakaldin, A.; Galper, A. M.; Koldashov, S. V.; Korotkov, M. G.; Mikhailov, V. V.; Voronov, S. A.; Yurkin, Y.; Adriani, O.; Bonechi, L.; Bongi, M.; Papini, P.; Ricciarini, S. B.; Spillantini, P.; Straulino, S.; Taccetti, F.; Vannuccini, E.; Castellini, G.; Boezio, M.; Bonvicini, M.; Mocchiutti, E.; Schiavon, P.; Vacchi, A.; Zampa, G.; Zampa, N.; Carlson, P.; Lund, J.; Lundquist, J.; Orsi, S.; Pearce, M.; Barbarino, G. C.; Campana, D.; Osteria, G.; Rossi, G.; Russo, S.; Boscherini, M.; Menn, W.; Simon, M.; Bongiorno, L.; Ricci, M.; Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; de Marzo, C.; Giglietto, N.; Mirizzi, N.; Romita, M.; Spinelli, P.; Bogomolov, E.; Krutkov, S.; Vasiljev, G.; Bazilevskaja, G. A.; Kvashnin, A. N.; Logachev, V. I.; Makhmutov, V. S.; Maksumov, O. S.; Stozhkov, Yu. I.; Mitchell, J. W.; Streitmatter, R. E.; Stochaj, S. J.

PAMELA is a satellite-borne experiment which will measure the antiparticle component of cosmic rays over an extended energy range and with unprecedented accuracy. The apparatus consists of a permanent magnetic spectrometer equipped with a double-sided silicon microstrip tracking system and surrounded by a scintillator anticoincidence system. A silicon tungsten imaging calorimeter, complemented by a scintillator shower tail catcher, and a transition radiation detector perform the particle identification task. Fast scintillators are used for Time-of-Flight measurements and to provide the primary trigger. A neutron detector is finally provided to extend the range of particle measurements to the TeV region. PAMELA will fly on-board of the Resurs-DK1 satellite, which will be put into a semi-polar orbit in 2005 by a Soyuz rocket. We give a brief review of the scientific issues of the mission and report about the status of the experiment few months before the launch.

Belle II SVD ladder assembly procedure and electrical qualification

NASA Astrophysics Data System (ADS)

Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, Varghese; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, T.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rao, K. K.; Rashevskaya, I.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.; Belle II SVD Collaboration

2016-07-01

The Belle II experiment at the SuperKEKB asymmetric e+e- collider in Japan will operate at a luminosity approximately 50 times larger than its predecessor (Belle). At its heart lies a six-layer vertex detector comprising two layers of pixelated silicon detectors (PXD) and four layers of double-sided silicon microstrip detectors (SVD). One of the key measurements for Belle II is time-dependent CP violation asymmetry, which hinges on a precise charged-track vertex determination. Towards this goal, a proper assembly of the SVD components with precise alignment ought to be performed and the geometrical tolerances should be checked to fall within the design limits. We present an overview of the assembly procedure that is being followed, which includes the precision gluing of the SVD module components, wire-bonding of the various electrical components, and precision three dimensional coordinate measurements of the jigs used in assembly as well as of the final SVD modules.

Can direct electron detectors outperform phosphor-CCD systems for TEM?

NASA Astrophysics Data System (ADS)

Moldovan, G.; Li, X.; Kirkland, A.

2008-08-01

A new generation of imaging detectors is being considered for application in TEM, but which device architectures can provide the best images? Monte Carlo simulations of the electron-sensor interaction are used here to calculate the expected modulation transfer of monolithic active pixel sensors (MAPS), hybrid active pixel sensors (HAPS) and double sided Silicon strip detectors (DSSD), showing that ideal and nearly ideal transfer can be obtained using DSSD and MAPS sensors. These results highly recommend the replacement of current phosphor screen and charge coupled device imaging systems with such new directly exposed position sensitive electron detectors.

Laser-assisted patterning of double-sided adhesive tapes for optofluidic chip integration

NASA Astrophysics Data System (ADS)

Zamora, Vanessa; Janeczka, Christian; Arndt-Staufenbiel, Norbert; Havlik, George; Queisser, Marco; Schröder, Henning

2018-02-01

Portable high-sensitivity biosensors exhibit a growing demand in healthcare, food industry and environmental monitoring sectors. Optical biosensors based on photonic integration platforms are attractive candidates due to their high sensitivity, compactness and multiplexing capabilities. However, they need a low-cost and reliable integration with the microfluidic system. Laser-micropatterned double-sided biocompatible adhesive tapes are promising bonding layers for hybrid integration of an optofluidic biochip. As a part of the EU-PHOCNOSIS project, double-sided adhesive tapes have been proposed to integrate the polymer microfluidic system with the optical integrated waveguide sensor chip. Here the adhesive tape should be patterned in a micrometer scale in order to create an interaction between the sample that flows through the polymer microchannel and the photonic sensing microstructure. Three laser-assisted structuring methods are investigated to transfer microchannel patterns to the adhesive tape. The test structure design consists of a single channel with 400 μm wide, 30 mm length and two circular receivers with 3 mm radius. The best structuring results are found by using the picosecond UV laser where smooth and straight channel cross-sections are obtained. Such patterned tapes are used to bond blank polymer substrates to blank silicon substrates. As a proof of concept, the hybrid integration is tested using colored DI-water. Structuring tests related to the reduction of channel widths are also considered in this work. The use of this technique enables a simple and rapid manufacturing of narrow channels (50-60 μm in width) in adhesive tapes, achieving a cheap and stable integration of the optofluidic biochip.

A bipolar analog front-end integrated circuit for the SDC silicon tracker

NASA Astrophysics Data System (ADS)

Kipnis, I.; Spieler, H.; Collins, T.

1993-11-01

A low noise, low power, high bandwidth, radiation hard, silicon bipolar transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using CBIC-U2, 4 GHz f(sub T) complementary bipolar technology. Each channel contains the following functions: low noise preamplification, pulse shaping, and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 micron pitch double-sided silicon strip detector. The chip measures 6.8 mm by 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to four times the noise level, a 16 nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Phi = 10(exp 14) protons/sq cm have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process.

All silicon electrode photocapacitor for integrated energy storage and conversion.

PubMed

Cohn, Adam P; Erwin, William R; Share, Keith; Oakes, Landon; Westover, Andrew S; Carter, Rachel E; Bardhan, Rizia; Pint, Cary L

2015-04-08

We demonstrate a simple wafer-scale process by which an individual silicon wafer can be processed into a multifunctional platform where one side is adapted to replace platinum and enable triiodide reduction in a dye-sensitized solar cell and the other side provides on-board charge storage as an electrochemical supercapacitor. This builds upon electrochemical fabrication of dual-sided porous silicon and subsequent carbon surface passivation for silicon electrochemical stability. The utilization of this silicon multifunctional platform as a combined energy storage and conversion system yields a total device efficiency of 2.1%, where the high frequency discharge capability of the integrated supercapacitor gives promise for dynamic load-leveling operations to overcome current and voltage fluctuations during solar energy harvesting.

Double stabilization of nanocrystalline silicon: a bonus from solvent

NASA Astrophysics Data System (ADS)

Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A.

2016-01-01

Double stabilization of the silicon nanocrystals was observed for the first time by 29Si and 13C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C-O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

NASA Technical Reports Server (NTRS)

Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam;

Fine-pitch CdTe detector for hard X-ray imaging and spectroscopy of the Sun with the FOXSI rocket experiment

NASA Astrophysics Data System (ADS)

Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'ichiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Buitrago-Casas, Juan Camilo; Krucker, Säm.; Christe, Steven

2016-07-01

We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires <100μm position resolution (to take advantage of the angular resolution of the optics) and ≈1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (>-30°C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 μm for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 μm and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm × 7.67 mm, corresponding to the field of view of 791'' × 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of ≈4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

NASA Astrophysics Data System (ADS)

Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

2014-04-01

This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10-10 Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10-10 Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment.

The XGS instrument on-board THESEUS

NASA Astrophysics Data System (ADS)

Fuschino, F.; Campana, R.; Labanti, C.; Marisaldi, M.; Amati, L.; Fiorini, M.; Uslenghi, M.; Baldazzi, G.; Evangelista, Y.; Elmi, I.; Feroci, M.; Frontera, F.; Rachevski, A.; Rignanese, L. P.; Vacchi, A.; Zampa, G.; Zampa, N.; Rashevskaya, I.; Bellutti, P.; Piemonte, C.

2016-10-01

Consolidated techniques used for space-borne X-ray and gamma-ray instruments are based on the use of scintillators coupled to Silicon photo-detectors. This technology associated with modern very low noise read-out electronics allows the design of innovative architectures able to reduce drastically the system complexity and power consumption, also with a moderate-to-high number of channels. These detector architectures can be exploited in the design of space instrumentation for gamma-spectroscopy with the benefit of possible smart background rejection strategies. We describe a detector prototype with 3D imaging capabilities to be employed in future gamma-ray and particle space missions in the 0.002-100 MeV energy range. The instrument is based on a stack of scintillating bars read out by Silicon Drift Detectors (SDDs) at both ends. The spatial segmentation and the crystal double-side readout allow a 3D position reconstruction with ∼3 mm accuracy within the full active volume, using a 2D readout along the two external faces of the detector. Furthermore, one of the side of SDDs can be used simultaneously to detect X-rays in the 2-30 keV energy range. The characteristics of this instrument make it suitable in next generation gamma-ray and particle space missions for Earth or outer space observations, and it will be briefly illustrated.

β-decay spectroscopy for the r-process nucleosynthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishimura, Shunji; Collaboration: RIBF Decay Collaborations

2014-05-09

Series of decay spectroscopy experiments, utilizing of high-purity Ge detectors and double-sided silicon-strip detectors, have been conducted to harvest the decay properties of very exotic nuclei relevant to the r-process nucleosynthesis at the RIBF. The decay properties such as β-decay half-lives, low-lying states, β-delayed neutron emissions, isomeric states, and possibly Q{sub β} of the very neutron-rich nuclei are to be measured to give significant constraints in the uncertainties of nuclear properties for the r-process nucleosynthesis. Recent results of βγ spectroscopy study using in-flight fission of {sup 238}U-beam will be presented together with our future perspectives.

Double-shelled silicon anode nanocomposite materials: A facile approach for stabilizing electrochemical performance via interface construction

NASA Astrophysics Data System (ADS)

Du, Lulu; Wen, Zhongsheng; Wang, Guanqin; Yang, Yan-E.

2018-04-01

The rapid capacity fading induced by volumetric changes is the main issue that hinders the widespread application of silicon anode materials. Thus, double-shelled silicon composite materials where lithium silicate was located between an Nb2O5 coating layer and a silicon active core were configured to overcome the chemical compatibility issues related to silicon and oxides. The proposed composites were prepared via a facile co-precipitation method combined with calcination. Transmission electron microscopy and X-ray photoelectron spectroscopy analysis demonstrated that a transition layer of lithium silicate was constructed successfully, which effectively hindered the thermal inter-diffusion between the silicon and oxide coating layers during heat treatment. The electrochemical performance of the double-shelled silicon composites was enhanced dramatically with a retained specific capacity of 1030 mAh g-1 after 200 cycles at a current density of 200 mA g-1 compared with 598 mAh g-1 for a core-shell Si@Nb2O5 composite that lacked the interface. The lithium silicate transition layer was shown to play an important role in maintaining the high electrochemical stability.

High-performance mc-Si ingot grown by modified DS system: Numerical investigation

NASA Astrophysics Data System (ADS)

Thiyagaragjan, M.; Aravindan, G.; Srinivasan, M.; Ramasamy, P.

2018-04-01

Numerical investigation is carried out on multi-crystalline silicon ingot grown by using side-top and side-bottom heaters and the temperature distribution, von Mises stress and maximum shear stress are analyzed. In order to analyze the changes, results from the side-top and side-bottom heaters are compared. The stress values are reduced, when the side-bottom heaters are placed. A 2D numerical approach is successfully applied to study the stress parameters in directional solidification silicon.

Sol-gel-Derived nano-sized double layer anti-reflection coatings (SiO2/TiO2) for low-cost solar cell fabrication.

PubMed

Lee, Seung Jun; Hur, Man Gyu; Yoon, Dae Ho

2013-11-01

We investigate nano-sized double layer anti-reflection coatings (ARCs) using a TiO2 and SiO2 sol-gel solution process for mono-crystalline silicon solar cells. The process can be easily adapted for spraying sol-gel coatings to reduce manufacturing cost. The spray-coated SiO2/TiO2 nano-sized double layer ARCs were deposited on mono-crystalline silicon solar cells, and they showed good optical properties. The spray coating process is a lower-cost fabrication process for large-scale coating than vacuum deposition processes such as PECVD. The measured average optical reflectance (300-1200 nm) was about approximately 8% for SiO2/TiO2 nano-sized double layer ARCs. The electrical parameters of a mono-crystalline silicon solar cell and reflection losses show that the SiO2/TiO2 stacks can improve cell efficiency by 0.2% compared to a non-coated mono-crystalline silicon solar cell. In the results, good correlation between theoretical and experimental data was obtained. We expect that the sol-gel spray-coated mono-crystalline silicon solar cells have high potential for low-cost solar cell fabrication.

Optical Addressing Electronic Tongue Based on Low Selective Photovoltaic Transducer with Nanoporous Silicon Layer

NASA Astrophysics Data System (ADS)

Litvinenko, S. V.; Bielobrov, D. O.; Lysenko, V.; Skryshevsky, V. A.

2016-08-01

The electronic tongue based on the array of low selective photovoltaic (PV) sensors and principal component analysis is proposed for detection of various alcohol solutions. A sensor array is created at the forming of p-n junction on silicon wafer with porous silicon layer on the opposite side. A dynamical set of sensors is formed due to the inhomogeneous distribution of the surface recombination rate at this porous silicon side. The sensitive to molecular adsorption photocurrent is induced at the scanning of this side by laser beam. Water, ethanol, iso-propanol, and their mixtures were selected for testing. It is shown that the use of the random dispersion of surface recombination rates on different spots of the rear side of p-n junction and principal component analysis of PV signals allows identifying mentioned liquid substances and their mixtures.

An analog front-end bipolar-transistor integrated circuit for the SDC silicon tracker

NASA Astrophysics Data System (ADS)

Kipnis, I.; Spieler, H.; Collins, T.

1994-08-01

A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker The IC was designed and tested at LBL and was fabricated using AT&T's CBIC-U2, 4 GHz f/sub /spl tau// complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 /spl mu/m pitch double-sided silicon strip detector. The chip measures 6.8 mm/spl times/3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. RMS at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a /spl Phi/=10/sup 14/ protons/cm/sup 2/ have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process.

Reduce on the Cost of Photovoltaic Power Generation for Polycrystalline Silicon Solar Cells by Double Printing of Ag/Cu Front Contact Layer

NASA Astrophysics Data System (ADS)

Peng, Zhuoyin; Liu, Zhou; Chen, Jianlin; Liao, Lida; Chen, Jian; Li, Cong; Li, Wei

2018-06-01

With the development of photovoltaic industry, the cost of photovoltaic power generation has become the significant issue. And the metallization process has decided the cost of original materials and photovoltaic efficiency of the solar cells. Nowadays, double printing process has been introduced instead of one-step printing process for front contact of polycrystalline silicon solar cells, which can effectively improve the photovoltaic conversion efficiency of silicon solar cells. Here, the relative cheap Cu paste has replaced the expensive Ag paste to form Ag/Cu composite front contact of silicon solar cells. The photovoltaic performance and the cost of photovoltaic power generation have been investigated. With the optimization on structure and height of Cu finger layer for Ag/Cu composite double-printed front contact, the silicon solar cells have exhibited a photovoltaic conversion efficiency of 18.41%, which has reduced 3.42 cent per Watt for the cost of photovoltaic power generation.

Ablation enhancement of silicon by ultrashort double-pulse laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xin; Shin, Yung C.

In this study, the ultrashort double-pulse ablation of silicon is investigated. An atomistic simulation model is developed to analyze the underlying physics. It is revealed that the double-pulse ablation could significantly increase the ablation rate of silicon, compared with the single pulse ablation with the same total pulse energy, which is totally different from the case of metals. In the long pulse delay range (over 1 ps), the enhancement is caused by the metallic transition of melted silicon with the corresponding absorption efficiency. At ultrashort pulse delay (below 1 ps), the enhancement is due to the electron excitation by the first pulse.more » The enhancement only occurs at low and moderate laser fluence. The ablation is suppressed at high fluence due to the strong plasma shielding effect.« less

Analog front-end design of the STS/MUCH-XYTER2—full size prototype ASIC for the CBM experiment

NASA Astrophysics Data System (ADS)

Kleczek, Rafal

2017-01-01

The design of the analog front-end of the STS/MUCH-XYTER2 ASIC, a full-size prototype chip for the Silicon Tracking System (STS, based on double-sided silicon strip sensors) and Muon Chamber (MUCH, based on gas sensors) detectors is presented. The ASIC contains 128 charge processing channels, each built of a charge sensitive amplifier, a polarity selection circuit and two pulse shaping amplifiers forming two parallel signal paths. The first path is used for timing measurement with a fast discriminator. The second path allows low-noise amplitude measurement with a 5-bit continuous-time flash ADC. Different operating conditions and constraints posed by two target detectors' applications require front-end electronics flexibility to meet extended system-wise requirements. The presented circuit implements switchable shaper peaking time, gain switching and trimming, input amplifier pulsed reset circuit, fail-safe measures. The power consumption is scalable (for the STS and the MUCH modes), but limited to 10 mW/channel.

Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2009-12-01

By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

Double layer adhesive silicone dressing as a potential dermal drug delivery film in scar treatment.

PubMed

Mojsiewicz-Pieńkowska, Krystyna; Jamrógiewicz, Marzena; Żebrowska, Maria; Mikolaszek, Barbara; Sznitowska, Małgorzata

2015-03-15

The present studies focused on the evaluation of design of an adhesive silicone film intended for scar treatment. Developed silicone double layer film was examined in terms of its future relevance to therapy and applicability on the human skin considering properties which included in vitro permeability of water vapor and oxygen. In order to adapt the patches for medical use in the future there were tested such properties as in vitro adhesion and occlusion related to in vivo hydration. From the silicone rubbers double layer silicone film was prepared: a non-adhesive elastomer as a drug carrier (the matrix for active substances - enoxaparin sodium - low molecular weight heparin) and an adhesive elastomer, applied on the surface of the matrix. The novel adhesive silicone film was found to possess optimal properties in comparison to commercially available silicone dressing: adhesion in vivo, adhesion in vitro - 11.79N, occlusion F=85% and water vapor permeability in vitro - WVP=105g/m(2)/24h, hydration of stratum corneum in vivoH=61-89 (RSD=1.6-0.9%), oxygen permeation in vitro - 119-391 cm(3)/m(2)/24 (RSD=0.17%). In vitro release studies indicated sufficient LMWH release rate from silicone matrix. Developed novel adhesive silicone films were considered an effective treatment of scars and keloids and a potential drug carrier able to improve the effectiveness of therapy. Copyright © 2015 Elsevier B.V. All rights reserved.

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

NASA Astrophysics Data System (ADS)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

The Hard X-ray Imager (HXI) for the ASTRO-H mission

NASA Astrophysics Data System (ADS)

Kokubun, Motohide; Nakazawa, Kazuhiro; Enoto, Teruaki; Fukazawa, Yasushi; Kataoka, Jun; Kawaharada, Madoka; Laurent, Philippe; Lebrun, François; Limousin, Olivier; Makishima, Kazuo; Mizuno, Tsunefumi; Mori, Kunishiro; Nakamori, Takeshi; Odaka, Hirokazu; Ohno, Masanori; Ohta, Masayuki; Sato, Goro; Sato, Rie; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Tanaka, Takaaki; Terada, Yukikatsu; Uchiyama, Hideki; Uchiyama, Yasunobu; Watanabe, Shin; Yatsu, Yoichi; Yuasa, Takayuki

2012-09-01

The Hard X-ray Imager (HXI) is one of the four detectors on board the ASTRO-H mission (6th Japanese X-ray satellite), which is scheduled to be launched in 2014. Using the hybrid structure composed of double-sided silicon strip detectors and a cadmium telluride double-sided strip detector, both with a high spatial resolution of 250 μm. Combined with the hard X-ray telescope (HXT), it consists a hard X-ray imaging spectroscopic instrument covering the energy range from 5 to 80 keV with an effective area of <300 cm2 in total at 30 keV. An energy resolution of 1-2 keV (FWHM) and lower threshold of 5 keV are both achieved with using a low noise front-end ASICs. In addition, the thick BGO active shields surrounding the main detector package is a heritage of the successful performance of the Hard X-ray Detector on board the Suzaku satellite. This feature enables the instrument to achieve an extremely good reduction of background caused by cosmic-ray particles, cosmic X-ray background, and in-orbit radiation activation. In this paper, we present the detector concept, design, latest results of the detector development, and the current status of the hardware.

Interaction of a single acetophenone molecule with group III-IV elements mediated by Si(001)

NASA Astrophysics Data System (ADS)

Racis, A.; Jurczyszyn, L.; Radny, M. W.

2018-03-01

A theoretical study of an influence of the acetophenone molecule adsorbed on the Si(001) on the local chemical reactivity of silicon surface is presented. The obtained results indicate that the interaction of the molecule with silicon substrate breaks the intra-dimer π bonds in four surface silicon dimers interacting directly with adsorbed molecule. This leads to the formation of two pairs of unpaired dangling bonds at two opposite sides of the molecule. It is demonstrated that these dangling bonds increase considerably the local chemical reactivity of the silicon substrate in the vicinity of the adsorbed molecule. Consequently, it is shown that such molecule bonded with Si(001) can stabilize the position of In and Pb adatoms diffusing on silicon substrate at two sides and initiate the one-dimensional aggregation of the metallic adatoms on the Si(001) substrate anchored at both sides of the adsorbed molecule. This type of aggregation leads to the growth of chain-like atomic structures in opposite directions, pinned to adsorbed molecule and oriented perpendicular to the rows of surface silicon dimers.

Light-trapping optimization in wet-etched silicon photonic crystal solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca; John, Sajeev; Department of Physics, King Abdul-Aziz University, Jeddah

2015-07-14

We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, correspondingmore » to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.« less

Creation of hydrophobic surfaces using a paint containing functionalized oxide particles

NASA Astrophysics Data System (ADS)

Sino, Paul Albert L.; Herrera, Marvin U.; Balela, Mary Donnabelle L.

2017-05-01

Hydrophobic surfaces were created by coating various substrates (aluminum sheet, soda-lime glass, silicon carbide polishing paper, glass with double-sided adhesive) with paint containing functionalized oxide particles. The paint was created by functionalizing oxide particles (ground ZnO, TiO2 nanoparticles, or TiO2 microparticles) with fluorosilane molecules in absolute ethanol. Water contact angle of samples shows that the coated substrate becomes hydrophobic (water contact angle ≥ 90°). Among the oxides that were used, ground ZnO yielded contact angle exemplifying superhydrophobicity (water contact angle ≥ 150°). Scanning electron micrograph of paint-containing TiO2 nanoparticles shows rough functionalized oxides structures which probably increase the hydrophobicity of the surface.

Double silicone tube intubation for the management of partial lacrimal system obstruction.

PubMed

Demirci, Hakan; Elner, Victor M

2008-02-01

To evaluate the effectiveness of double silicone intubation for the management of partial lacrimal drainage system obstruction in adults. Observational retrospective case series. Twenty-four eyes of 18 consecutive adult patients with partial lacrimal system obstruction managed at the University of Michigan. Retrospective review of symptoms and signs, duration of silicone intubation, and complications. Resolution of tearing. Preoperative tearing, negative Jones I testing, positive Jones II testing, and resistance to positive-pressure irrigation were present in all eyes (100%). The first silicone tube was removed after a mean of 11+/-7 months, and the second tube after 16+/-6 months. Postoperatively, at a mean of 21+/-9 months after removal of both tubes, tearing remained resolved in 19 eyes (79%) and remained improved in 2 eyes (8%). In eyes with resolved tearing, Jones I testing became positive, and there was no resistance to positive-pressure irrigation. Persistent tearing in 3 eyes (13%) required treatment with external dacryocystorhinostomy. The only complication was peripunctal pyogenic granulomas in 2 eyes. Double silicone intubation is an effective minimally invasive technique for treatment of partial lacrimal system obstruction in adults.

Esthetic management of a primary double tooth using a silicone putty guide: a case report.

PubMed

Agarwal, Ravi; Chaudhry, Kalpna; Yeluri, Ramakrishna; Munshi, Autar Krishen

2013-03-01

The term double tooth is often used to describe fusion and gemination. The development of isolated large or joined teeth is not rare, but the literature is confusing when the appropriate terminology is presented. The objective of this paper is to present a case of a primary double tooth in a 5-year-old girl with a history of trauma. The tooth was endodontically treated and esthetic management was carried out using a silicone putty guide.

Back-side hydrogenation technique for defect passivation in silicon solar cells

DOEpatents

Sopori, Bhushan L.

1994-01-01

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

Back-side hydrogenation technique for defect passivation in silicon solar cells

DOEpatents

Sopori, B.L.

1994-04-19

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

Electron spin resonance and spin-valley physics in a silicon double quantum dot.

PubMed

Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

2014-05-14

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

Formation of unexpected silicon- and disiloxane-bridged multiferrocenyl derivatives bearing Si-O-CH[double bond, length as m-dash]CH2 and Si-(CH2)2C(CH3)3 substituents via cleavage of tetrahydrofuran and trapping of its ring fragments.

PubMed

Bruña, Sonia; González-Vadillo, Ana Mª; Ferrández, Marta; Perles, Josefina; Montero-Campillo, M Merced; Mó, Otilia; Cuadrado, Isabel

2017-09-12

The formation of a family of silicon- and siloxane-bridged multiferrocenyl derivatives carrying different functional groups attached to silicon, including Fc 2 (CH 3 ) 3 C(CH 2 ) 2 SiCH[double bond, length as m-dash]CH 2 (5), Fc 2 (CH 2 [double bond, length as m-dash]CH-O)SiCH[double bond, length as m-dash]CH 2 (6), Fc 2 (OH)SiCH[double bond, length as m-dash]CH 2 (7), Fc 2 (CH 2 [double bond, length as m-dash]CH-O)Si-O-Si(O-CH[double bond, length as m-dash]CH 2 )Fc 2 (8) and Fc 2 (CH 2 [double bond, length as m-dash]CH-O)Si-O-SiFc 3 (9) is described. Silyl vinyl ether molecules 6, 8 and 9 and the heteroleptic vinylsilane 5 resulted from the competing metathesis reaction of lithioferrocene (FcLi), CH 2 [double bond, length as m-dash]CH-OLi or (CH 3 ) 3 C(CH 2 ) 2 Li with the corresponding multifunctional chlorosilane, Cl 3 SiCH[double bond, length as m-dash]CH 2 or Cl 3 Si-O-SiCl 3 . The last two organolithium species have been likely formed in situ by fragmentation of the tetrahydrofuran solvent. Diferrocenylvinyloxyvinylsilane 6 is noteworthy since it represents a rare example of a redox-active silyl mononomer in which two different C[double bond, length as m-dash]C polymerisable groups are directly connected to silicon. The molecular structures of the silicon-containing multiferrocenyl species 5, 6, 8 and 9 have been investigated by single-crystal X-ray diffraction studies, demonstrating the capture and storage processes of two ring fragments resulting from the cleavage of cyclic THF in redox-active and stable crystalline organometallic compounds. From electrochemical studies we found that by changing the anion of the supporting electrolyte from [PF 6 ] - to [B(C 6 F 5 ) 4 ] - , the redox behaviour of tetrametallic disiloxane 8 can be switched from a poorly resolved multistep redox process to four consecutive well-separated one-electron oxidations, corresponding to the sequential oxidation of the four ferrocenyl moieties.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Fabrication of novel silicone capsules with tunable mechanical properties by microfluidic techniques.

PubMed

Vilanova, Neus; Rodríguez-Abreu, Carlos; Fernández-Nieves, Alberto; Solans, Conxita

2013-06-12

A novel approach for the synthesis of silicone capsules using double W/O/W emulsions as templates is introduced. The low viscosity of the silicone precursors enables the use of microfluidic techniques to accurately control the size and morphology of the double emulsion droplets, which after cross-linking result in the desired monodisperse silicone capsules. Their shell thickness can be finely tuned, which in turn allows control over their permeability and mechanical properties; the latter are particularly important in a variety of practical applications where the capsules are subjected to large external forces. The potential of these capsules for controlled release is also demonstrated using a model hydrophilic substance.

Wide-band 'black silicon' with atomic layer deposited NbN.

PubMed

Isakov, Kirill; Perros, Alexander Pyymaki; Shah, Ali; Lipsanen, Harri

2018-08-17

Antireflection surfaces are often utilized in optical components to reduce undesired reflection and increase absorption. We report on black silicon (b-Si) with dramatically enhanced absorption over a broad wavelength range (250-2500 nm) achieved by applying a 10-15 nm conformal coating of NbN with atomic layer deposition (ALD). The improvement is especially pronounced in the near infrared (NIR) range of 1100-2500 nm where absorption is increased by >90%. A significant increase of absorption is also observed over the ultraviolet range of 200-400 nm. Preceding NbN deposition with a nanostructured ALD Al 2 O 3 (n-Al 2 O 3 ) coating to enhance the NbN texture was also examined. Such texturing further improves absorption in the NIR, especially at longer wavelengths, strong absorption up to 4-5 μm wavelengths has been attested. For comparison, double side polished silicon and sapphire coated with 10 nm thick NbN exhibited absorption of only ∼55% in the NIR range of 1100-2500 nm. The results suggest a positive correlation between the surface area of NbN coating and optical absorption. Based on the wide-band absorption, the presented NbN-coated b-Si may be an attractive candidate for use in e.g. spectroscopic systems, infrared microbolometers.

A silk sericin/silicone nerve guidance conduit promotes regeneration of a transected sciatic nerve.

PubMed

Xie, Hongjian; Yang, Wen; Chen, Jianghai; Zhang, Jinxiang; Lu, Xiaochen; Zhao, Xiaobo; Huang, Kun; Li, Huili; Chang, Panpan; Wang, Zheng; Wang, Lin

2015-10-28

Peripheral nerve gap defects lead to significant loss of sensory or motor function. Tissue engineering has become an important alternative to nerve repair. Sericin, a major component of silk, is a natural protein whose value in tissue engineering has just begun to be explored. Here, the first time use of sericin in vivo is reported as a long-term implant for peripheral nerve regeneration. A sericin nerve guidance conduit is designed and fabricated. This conduit is highly porous with mechanical strength matching peripheral nerve tissue. It supports Schwann cell proliferation and is capable of up-regulating the transcription of glial cell derived neurotrophic factor and nerve growth factor in Schwann cells. The sericin conduit wrapped with a silicone conduit (sericin/silicone double conduits) is used for bridging repair of a 5 mm gap in a rat sciatic nerve transection model. The sericin/silicone double conduits achieve functional recovery comparable to that of autologous nerve grafting as evidenced by drastically improved nerve function and morphology. Importantly, this improvement is mainly attributed to the sericin conduit as the silicone conduit alone only produces marginal functional recovery. This sericin/silicone-double-conduit strategy offers an efficient and valuable alternative to autologous nerve grafting for repairing damaged peripheral nerve. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two-axis control of a singlet-triplet qubit with an integrated micromagnet.

DOE PAGES

Wu, Xian; Ward, D. R.; Prance, J. R.; ...

2014-08-04

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double-quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micromagnet, the magnetic field difference ΔB between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit’s Bloch vector around two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time T*2 is determined. By measuringmore » T*2 at many different values of the exchange coupling J and at two different values of ΔB, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on T*2 arising from charge noise and from coupling to nuclear spins.« less

The Si/CdTe semiconductor camera of the ASTRO-H Hard X-ray Imager (HXI)

NASA Astrophysics Data System (ADS)

Sato, Goro; Hagino, Kouichi; Watanabe, Shin; Genba, Kei; Harayama, Atsushi; Kanematsu, Hironori; Kataoka, Jun; Katsuragawa, Miho; Kawaharada, Madoka; Kobayashi, Shogo; Kokubun, Motohide; Kuroda, Yoshikatsu; Makishima, Kazuo; Masukawa, Kazunori; Mimura, Taketo; Miyake, Katsuma; Murakami, Hiroaki; Nakano, Toshio; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Onishi, Mitsunobu; Saito, Shinya; Sato, Rie; Sato, Tamotsu; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shin`ichiro; Yuasa, Takayuki

2016-09-01

The Hard X-ray Imager (HXI) is one of the instruments onboard the ASTRO-H mission [1-4] to be launched in early 2016. The HXI is the focal plane detector of the hard X-ray reflecting telescope that covers an energy range from 5 to 80 keV. It will execute observations of astronomical objects with a sensitivity for point sources as faint as 1/100,000 of the Crab nebula at > 10 keV. The HXI camera - the imaging part of the HXI - is realized by a hybrid semiconductor detector system that consists of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. Here, we present the final design of the HXI camera and report on the development of the flight model. The camera is composed of four layers of Double-sided Silicon Strip Detectors (DSSDs) and one layer of CdTe Double-sided Strip Detector (CdTe-DSD), each with an imaging area of 32 mm×32 mm. The strip pitch of the Si and CdTe sensors is 250 μm, and the signals from all 1280 strips are processed by 40 Application Specified Integrated Circuits (ASICs) developed for the HXI. The five layers of sensors are vertically stacked with a 4 mm spacing to increase the detection efficiency. The thickness of the sensors is 0.5 mm for the Si, and 0.75 mm for the CdTe. In this configuration, soft X-ray photons will be absorbed in the Si part, while hard X-ray photons will go through the Si part and will be detected in the CdTe part. The design of the sensor trays, peripheral circuits, power connections, and readout schemes are also described. The flight models of the HXI camera have been manufactured, tested and installed in the HXI instrument and then on the satellite.

Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

DOEpatents

Gee, James M; Schmit, Russell R.

2007-01-30

Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Ines; Schillig, Cora

A double-sided adhesive metal-based tape for use as contacting aid for SOFC fuel cells is provided. The double-sided metal-based adhesive tape is suitable for simplifying the construction of cell bundles. The double-sided metal-based adhesive tape is used for electrical contacting of the cell connector with the anode and for electrical contacting of the interconnector of the fuel cells with the cell connector. A method for producing the double-sided adhesive metal-base tape is also provided.

Neutron radiation tolerance of Au-activated silicon

NASA Technical Reports Server (NTRS)

Joyner, W. T.

1987-01-01

Double injection devices prepared by the introduction of deep traps, using the Au activation method have been found to tolerate gamma irradiation into the Gigarad (Si) region without significant degradation of operating characteristics. Silicon double injection devices, using deep levels creacted by Au diffusion, can tolerate fast neutron irradiation up to 10 to the 15th n/sq cm. Significant parameter degradation occurs at 10 to the 16th n/sq cm. However, since the actual doping of the basic material begins to change as a result of the transmutation of silicon into phosphorus for neutron fluences greater than 10 to the 17th/sq cm, the radiation tolerance of these devices is approaching the limit possible for any device based on initially doped silicon.

Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kononov, N. N., E-mail: nnk@kapella.gpi.ru; Dorofeev, S. G.; Ishchenko, A. A.

2011-08-15

Dielectric properties of thin films precipitated on solid substrates from colloidal solutions containing silicon nanoparticles (average diameter is 10 nm) are studied by optical ellipsometry and impedance-spectroscopy. In the optical region, the values of real {epsilon} Prime and imaginary {epsilon} Double-Prime components of the complex permittivity {epsilon} vary within 2.1-1.1 and 0.25-0.75, respectively. These values are significantly lower than those of crystalline silicon. Using numerical simulation within the Bruggeman effective medium approximation, we show that the experimental {epsilon} Prime and {epsilon} Double-Prime spectra can be explained with good accuracy, assuming that the silicon film is a porous medium consisting ofmore » silicon monoxide (SiO) and air voids at a void ratio of 0.5. Such behavior of films is mainly caused by the effect of outer shells of silicon nanoparticles interacting with atmospheric oxygen on their dielectric properties. In the frequency range of 10-10{sup 6} Hz, the experimentally measured {epsilon} Prime and {epsilon} Double-Prime spectra of thin nanoscale silicon films are well approximated by the semi-empirical Cole-Cole dielectric dispersion law with the term related to free electric charges. The experimentally determined power-law frequency dependence of the ac conductivity means that the electrical transport in films is controlled by electric charge hopping through localized states in the unordered medium of outer shells of silicon nanoparticles composing films. It is found that the film conductivity at frequencies of {<=}2 Multiplication-Sign 10{sup 2} Hz is controlled by proton transport through Si-OH groups on the silicon nanoparticle surface.« less

Electromigration process for the purification of molten silicon during crystal growth

DOEpatents

Lovelace, Alan M. Administrator of the National Aeronautics and Space; Shlichta, Paul J.

1982-01-01

A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal growth according to Czochralski techniques and edge-defined film-fed growth (EFG) conditions. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. In the EFG crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities are thereby migrated to one side only of the crystal ribbon. The impurities may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

HAREM: high aspect ratio etching and metallization for microsystems fabrication

NASA Astrophysics Data System (ADS)

Sarajlic, Edin; Yamahata, Christophe; Cordero, Mauricio; Collard, Dominique; Fujita, Hiroyuki

2008-07-01

We report a simple bulk micromachining method for the fabrication of high aspect ratio monocrystalline silicon MEMS (microelectromechanical systems) in a standard silicon wafer. We call this two-mask microfabrication process high aspect ratio etching and metallization or HAREM: it combines double-side etching and metallization to create suspended micromechanical structures with electrically 'insulating walls' on their backside. The insulating walls ensure a proper electrical insulation between the different actuation and sensing elements situated on either fixed or movable parts of the device. To demonstrate the high potential of this simple microfabrication method, we have designed and characterized electrostatically actuated microtweezers that integrate a differential capacitive sensor. The prototype showed an electrical insulation better than 1 GΩ between the different elements of the device. Furthermore, using a lock-in amplifier circuit, we could measure the position of the moving probe with few nanometers resolution for a displacement range of about 3 µm. This work was presented in part at the 21st IEEE MEMS Conference (Tucson, AZ, USA, 13-17 January, 2008) (doi:10.1109/MEMSYS.2008.4443656).

Overview of the Micro Vertex Detector for the P bar ANDA experiment

NASA Astrophysics Data System (ADS)

Calvo, Daniela; P¯ANDA MVD Group

2017-02-01

The P bar ANDA experiment is devoted to study interactions between cooled antiproton beams and a fixed target (the interaction rate is of about 107 events/s), hydrogen or heavier nuclei. The innermost tracker of P bar ANDA is the Micro Vertex Detector (MVD), specially designed to ensure the secondary vertex resolution for the discrimination of short-lived charmonium states. Hybrid epitaxial silicon pixels and double-sided silicon microstrips will equip four barrels, arranged around the interaction point, and six forward disks. The experiment features a triggerless architecture with a master clock of 160 MHz, therefore the MVD has to run with a continuous data transmission where the hits need precise timestamps. The energy loss of the particles in the sensor will be measured as well. The challenging request of a triggerless readout suggested to develop custom readout chips for both pixel (ToPix) and microstrip (PASTA) devices. To validate components and the triggerless readout architecture, prototypes have been built and tested. After an overview of the MVD, the technological aspects and performances of some prototypes will be reported.

Vertically Integrated MEMS SOI Composite Porous Silicon-Crystalline Silicon Cantilever-Array Sensors: Concept for Continuous Sensing of Explosives and Warfare Agents

NASA Astrophysics Data System (ADS)

Stolyarova, Sara; Shemesh, Ariel; Aharon, Oren; Cohen, Omer; Gal, Lior; Eichen, Yoav; Nemirovsky, Yael

This study focuses on arrays of cantilevers made of crystalline silicon (c-Si), using SOI wafers as the starting material and using bulk micromachining. The arrays are subsequently transformed into composite porous silicon-crystalline silicon cantilevers, using a unique vapor phase process tailored for providing a thin surface layer of porous silicon on one side only. This results in asymmetric cantilever arrays, with one side providing nano-structured porous large surface, which can be further coated with polymers, thus providing additional sensing capabilities and enhanced sensing. The c-Si cantilevers are vertically integrated with a bottom silicon die with electrodes allowing electrostatic actuation. Flip Chip bonding is used for the vertical integration. The readout is provided by a sensitive Capacitance to Digital Converter. The fabrication, processing and characterization results are reported. The reported study is aimed towards achieving miniature cantilever chips with integrated readout for sensing explosives and chemical warfare agents in the field.

Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

NASA Astrophysics Data System (ADS)

Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

2017-02-01

Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

Tests on Double Layer Metalization

NASA Technical Reports Server (NTRS)

Woo, D. S.

1983-01-01

28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.

Alternative Packaging for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An alternative scheme has been conceived for packaging of silicon-based back-illuminated, back-side-thinned complementary metal oxide/semiconductor (CMOS) and charge-coupled-device image-detector integrated circuits, including an associated fabrication process. This scheme and process are complementary to those described in "Making a Back-Illuminated Imager With Back-Side Connections" (NPO-42839), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), page 38. To avoid misunderstanding, it should be noted that in the terminology of imaging integrated circuits, "front side" or "back side" does not necessarily refer to the side that, during operation, faces toward or away from a source of light or other object to be imaged. Instead, "front side" signifies that side of a semiconductor substrate upon which the pixel pattern and the associated semiconductor devices and metal conductor lines are initially formed during fabrication, and "back side" signifies the opposite side. If the imager is of the type called "back-illuminated," then the back side is the one that faces an object to be imaged. Initially, a back-illuminated, back-side-thinned image-detector is fabricated with its back side bonded to a silicon handle wafer. At a subsequent stage of fabrication, the front side is bonded to a glass wafer (for mechanical support) and the silicon handle wafer is etched away to expose the back side. The frontside integrated circuitry includes metal input/output contact pads, which are rendered inaccessible by the bonding of the front side to the glass wafer. Hence, one of the main problems is to make the input/output contact pads accessible from the back side, which is ultimately to be the side accessible to the external world. The present combination of an alternative packaging scheme and associated fabrication process constitute a solution of the problem.

Silicon-gate CMOS/SOS processing

NASA Technical Reports Server (NTRS)

Ramondetta, P.

1979-01-01

Major silicon-gate CMOS/SOS processes are described. Sapphire substrate preparation is also discussed, as well as the following process variations: (1) the double epi process; and (2) ion implantation.

Rapid prototyping of microfluidic systems using a PDMS/polymer tape composite.

PubMed

Kim, Jungkyu; Surapaneni, Rajesh; Gale, Bruce K

2009-05-07

Rapid prototyping of microfluidic systems using a combination of double-sided tape and PDMS (polydimethylsiloxane) is introduced. PDMS is typically difficult to bond using adhesive tapes due to its hydrophobic nature and low surface energy. For this reason, PDMS is not compatible with the xurography method, which uses a knife plotter and various adhesive coated polymer tapes. To solve these problems, a PDMS/tape composite was developed and demonstrated in microfluidic applications. The PDMS/tape composite was created by spinning it to make a thin layer of PDMS over double-sided tape. Then the PDMS/tape composite was patterned to create channels using xurography, and bonded to a PDMS slab. After removing the backing paper from the tape, a complete microfluidic system could be created by placing the construct onto nearly any substrate; including glass, plastic or metal-coated glass/silicon substrates. The bond strength was shown to be sufficient for the pressures that occur in typical microfluidic channels used for chemical or biological analysis. This method was demonstrated in three applications: standard microfluidic channels and reactors, a microfluidic system with an integrated membrane, and an electrochemical biosensor. The PDMS/tape composite rapid prototyping technique provides a fast and cost effective fabrication method and can provide easy integration of microfluidic channels with sensors and other components without the need for a cleanroom facility.

Method for Forming Fiber Reinforced Composite Bodies with Graded Composition and Stress Zones

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay (Inventor); Levine, Stanley R. (Inventor); Smialek, James A. (Inventor)

1999-01-01

A near-net, complex shaped ceramic fiber reinforced silicon carbide based composite bodies with graded compositions and stress zones is disclosed. To provide the composite a fiber preform is first fabricated and an interphase is applied by chemical vapor infiltration, sol-gel or polymer processes. This first body is further infiltrated with a polymer mixture containing carbon, and/or silicon carbide, and additional oxide, carbide, or nitride phases forming a second body. One side of the second body is spray coated or infiltrated with slurries containing high thermal expansion and oxidation resistant. crack sealant phases and the other side of this second body is coated with low expansion phase materials to form a third body. This third body consisting of porous carbonaceous matrix surrounding the previously applied interphase materials, is then infiltrated with molten silicon or molten silicon-refractory metal alloys to form a fourth body. The resulting fourth body comprises dense composites consisting of fibers with the desired interphase which are surrounded by silicon carbide and other second phases materials at the outer and inner surfaces comprising material of silicon, germanium, refractory metal suicides, borides, carbides, oxides, and combinations thereof The resulting composite fourth body has different compositional patterns from one side to the other.

Double stenting with silicone and metallic stents for malignant airway stenosis.

PubMed

Matsumoto, Keitaro; Yamasaki, Naoya; Tsuchiya, Tomoshi; Miyazaki, Takuro; Kamohara, Ryotaro; Hatachi, Go; Nagayasu, Takeshi

2017-08-01

For severe malignant airway stenosis, there are several types of commercially available airway stents, and each has its own advantages and disadvantages. We herein describe the safety and efficacy of combination stenting with silicone and metallic stents for patients with extended malignant airway stenosis. Seven patients with malignant airway stenosis were treated via combination stenting with a silicone stent and a metallic stent for extended airway stenosis from the central to peripheral airways. Five patients were diagnosed with advanced esophageal cancer, two of whom had tracheoesophageal fistulas. One patient had adenoid cystic carcinoma, and another had mediastinal tumor. There were no specific complications related to the double stenting. Combination stenting with silicone and metallic stents proved to be a safe option for patients with severe, extended, and complicated malignant airway stenosis.

Case series: evaluation of a liquid silicone gel on scar appearance following excisional surgery--a pilot study.

PubMed

Spencer, James M

2010-07-01

Efforts to improve the size and appearance of scars have included therapies as varied as laser treatments and onion extract gels. Silicone gel sheeting is well know to improve the appearance of hypertrophic scars, and may have a role in the management of routine surgical and traumatic scars. By varying the degree of cross linking, silicone elastomer can be a solid sheet or a liquid gel. In this pilot series, seven patients applied a liquid silicone gel twice a day to one half of a new surgical scar for three months. At the end of this time, the treated side was noticeably better in appearance in five of seven patients while two of seven had no difference. In no patient was the silicone treated side worse in appearance.

Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon.

PubMed

Derrien, Thibault J-Y; Krüger, Jörg; Itina, Tatiana E; Höhm, Sandra; Rosenfeld, Arkadi; Bonse, Jörn

2013-12-02

The formation of near-wavelength laser-induced periodic surface structures (LIPSS) on silicon upon irradiation with sequences of Ti:sapphire femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied theoretically. For this purpose, the nonlinear generation of conduction band electrons in silicon and their relaxation is numerically calculated using a two-temperature model approach including intrapulse changes of optical properties, transport, diffusion and recombination effects. Following the idea that surface plasmon polaritons (SPP) can be excited when the material turns from semiconducting to metallic state, the "SPP active area" is calculated as function of fluence and double-pulse delay up to several picoseconds and compared to the experimentally observed rippled surface areas. Evidence is presented that multi-photon absorption explains the large increase of the rippled area for temporally overlapping pulses. For longer double-pulse delays, relevant relaxation processes are identified. The results demonstrate that femtosecond LIPSS on silicon are caused by the excitation of SPP and can be controlled by temporal pulse shaping.

New overlay measurement technique with an i-line stepper using embedded standard field image alignment marks for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2017-06-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules require addition backside processing of the wafer; thus an accurate alignment between the front and backside of the wafer is mandatory. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 μm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8]. Therefore, the available overlay measurement techniques are not suitable if overlay and alignment marks are realized at the bonding interface of a wafer stack which consists of both a silicon device and a silicon carrier wafer. The former used EVG 40NT automated overlay measurement system, which use two opposite positioned microscopes inspecting simultaneous the wafer back and front side, is not capable measuring embedded overlay marks. In this work, the non-contact infrared alignment system of the Nikon i-line Stepper NSR-SF150 for both the alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the offsets between all different FIA's into account, after correcting the wafer rotation induced FIA position errors, hence an overlay for the stacked wafers can be determined. The developed approach has been validated by a standard back to front side application. The overlay was measured and determined using both, the EVG NT40 automated measurement system with special overlay marks and the measurement of the FIA marks of the front and back side layer. A comparison of both results shows mismatches in x and y translations smaller than 200 nm, which is relatively small compared to the overlay tolerances of +/-500 nm for the back to front side process. After the successful validation of the developed technique, special wafer stacks with FIA alignment marks in the bonding interface are fabricated. Due to the super IR light transparency of both doubled side polished wafers, the embedded FIA marks generate a stable and clear signal for accurate x and y wafer coordinate positioning. The FIA marks of the device wafer top layer were measured under standard condition in a developed photoresist mask without IR illumination. Following overlay calculation shows an overlay of less than 200 nm, which enables very accurate process condition for highly scaled TSV integration and advanced substrate integration into IHP's 0.25/0.13 μm SiGe:C BiCMOS technology. The presented method can be applied for both the standard back to front side process technologies and also new temporary and permanent wafer bonding applications.

Urethane/Silicone Adhesives for Bonding Flexing Metal Parts

NASA Technical Reports Server (NTRS)

Edwards, Paul D.

2004-01-01

Adhesives that are blends of commercially available urethane and silicone adhesives have been found to be useful for bonding metal parts that flex somewhat during use. These urethane/silicone adhesives are formulated for the specific metal parts to be bonded. The bonds formed by these adhesives have peel and shear strengths greater than those of bonds formed by double-sided tapes and by other adhesives, including epoxies and neat silicones. In addition, unlike the bonds formed by epoxies, the bonds formed by these adhesives retain flexibility. In the initial application for which the urethane/silicone adhesives were devised, there was a need to bond spring rings, which provide longitudinal rigidity for inflatable satellite booms, with the blades that provide the booms axial strength. The problem was to make the bonds withstand the stresses, associated with differences in curvature between the bonded parts, that arose when the booms were deflated and the springs were compressed. In experiments using single adhesives (that is, not the urethane/ silicone blends), the bonds were broken and, in each experiment, it was found that the adhesive bonded well with either the ring or with the blade, but not both. After numerous experiments, the adhesive that bonded best with the rings and the adhesive that bonded best with the blades were identified. These adhesives were then blended and, as expected, the blend bonded well with both the rings and the blades. The two adhesives are Kalex (or equivalent) high-shear-strength urethane and Dow Corning 732 (or equivalent) silicone. The nominal mixture ratio is 5 volume parts of the urethane per 1 volume part of the silicone. Increasing the proportion of silicone makes the bond weaker but more flexible, and decreasing the proportion of silicone makes the bond stronger but more brittle. The urethane/silicone blend must be prepared and used quickly because of the limited working time of the urethane: The precursor of the urethane adhesive is supplied in a two-part form, comprising a resin and a hardener that must be mixed. The resulting urethane adhesive has a working time of 3 to 5 minutes. To prepare the urethane/silicone blend, one must quickly add the silicone to the urethane adhesive and mix it in thoroughly within the working time of the urethane. Once the urethane/silicone blend has been mixed and applied to the bond surfaces, it takes about 2 hours for the adhesive to cure under pressure. However, it takes about 24 hours for the adhesive to reach full strength.

Silicon-based hot electron emitting substrate with double tunneling

NASA Astrophysics Data System (ADS)

Chen, Fei; Zhan, Xinghua; Salcic, Zoran; Wong, Chee Cheong; Gao, Wei

2017-07-01

We propose a novel silicon structure, Hot Electron Emitting Substrate (HEES), which exhibits important effect of repeated tunneling at two different voltage ranges, which we refer to as double tunneling. In ambient atmosphere and room temperature, the I-V characteristic of HEES shows two current peaks during voltage sweep from 2 to 15 V. These two peaks are formed by the Fowler-Nordheim (FN) tunneling effect and tunneling diode mechanism, respectively.

The Belle II Silicon Vertex Detector

NASA Astrophysics Data System (ADS)

Friedl, M.; Ackermann, K.; Aihara, H.; Aziz, T.; Bergauer, T.; Bozek, A.; Campbell, A.; Dingfelder, J.; Drasal, Z.; Frankenberger, A.; Gadow, K.; Gfall, I.; Haba, J.; Hara, K.; Hara, T.; Higuchi, T.; Himori, S.; Irmler, C.; Ishikawa, A.; Joo, C.; Kah, D. H.; Kang, K. H.; Kato, E.; Kiesling, C.; Kodys, P.; Kohriki, T.; Koike, S.; Kvasnicka, P.; Marinas, C.; Mayekar, S. N.; Mibe, T.; Mohanty, G. B.; Moll, A.; Negishi, K.; Nakayama, H.; Natkaniec, Z.; Niebuhr, C.; Onuki, Y.; Ostrowicz, W.; Park, H.; Rao, K. K.; Ritter, M.; Rozanska, M.; Saito, T.; Sakai, K.; Sato, N.; Schmid, S.; Schnell, M.; Shimizu, N.; Steininger, H.; Tanaka, S.; Tanida, K.; Taylor, G.; Tsuboyama, T.; Ueno, K.; Uozumi, S.; Ushiroda, Y.; Valentan, M.; Yamamoto, H.

2013-12-01

The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×1035 cm-2 s-1 in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13 m2 and 223,744 channels-twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics.

The AMS tracking detector for cosmic-ray physics in space

NASA Astrophysics Data System (ADS)

Bourquin, Maurice; AMS Tracker Collaboration

2005-04-01

AMS-02 is a general-purpose spectrometer designed to measure cosmic rays and gamma rays in near-Earth orbit. The main scientific motivations are the search for cosmic anti-matter, the search for dark matter, precision measurements on the relative abundance of different nuclei and isotopes, as well as the measurement of very high-energy gamma rays. Constructed by a large international collaboration of institutes from America, Asia and Europe, it will collect data on the International Space Station for a period of at least three years. In this contribution, I first identify the various detector requirements necessary to carry out this ambitious program. In particular, a large-area silicon microstrip detector inside a 0.8 T superconducting magnet is well suited to measure rigidity p/Z and specific energy loss d E/d x of cosmic rays, as well as the direction and energy of converted gamma rays. I review the advantage of such a silicon-tracking detector, taking into account the constraints of the space environment. The collaboration has gained extensive operating experience with double-sided silicon sensors in beam tests, and above all with AMS-01, a precursor spectrometer flown in the cargo bay of the Shuttle Discovery. During the entire 10-day STS-91 mission, the Silicon Tracker functioned without fault and with good spatial resolution. From the lessons learned with AMS-01, improvements were made to the design and assembly procedure of the 2500 sensors of AMS-02. As a result, the charge identification has been extended from Oxygen ( Z=8) to Iron ( Z=26). The physics reach of the new spectrometer is presented.

Silicone granuloma from ruptured breast implants as a cause of cervical lymphadenopathy

PubMed Central

Gallagher, G; Skelly, BL

2016-01-01

A 56-year-old woman with a 10-year history of bilateral silicone breast implants presented to the ear, nose and throat outpatient clinic with a 2-month history of a right-sided neck lump. She was found to have a 1.3cm supraclavicular lymph node that gave the clinical impression of being reactive. Ultrasonography guided fine needle aspiration was inconclusive and initial review of subsequent computed tomography failed to identify a cause. This was followed by excisional biopsy of the lymph node, which revealed a silicone granuloma that was linked to a ruptured right-sided breast implant placed ten years previously. This case highlights the importance for otolaryngologists to consider silicone granuloma among the differential diagnoses of cervical lymphadenopathy in patients with a history of silicone breast implants. Recognising this differential diagnosis could avoid undue anxiety for patient and clinician regarding more serious pathology. PMID:27167311

Photoluminescent silicon nanocrystals with chlorosilane surfaces - synthesis and reactivity

NASA Astrophysics Data System (ADS)

Höhlein, Ignaz M. D.; Kehrle, Julian; Purkait, Tapas K.; Veinot, Jonathan G. C.; Rieger, Bernhard

2014-12-01

We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place.We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place. Electronic supplementary information (ESI) available: Detailed experimental procedures and additional NMR, PL, EDX, DLS and TEM data. See DOI: 10.1039/C4NR05888G

The immediate use of a silicone sheet wound closure device in scar reduction and prevention.

PubMed

Parry, James R; Stupak, Howard D; Johnson, Calvin M

2016-02-01

Silicone has been used successfully postoperatively in the prevention of hypertrophic and other types of adverse scars. The Silicone Suture Plate (SSP) is a new, minimally invasive, sterile wound closure device that is applied intraoperatively to prevent adverse scarring. The SSP device permits immediate application of silicone while concurrently allowing for wound-edge tension redistribution. In this prospective, controlled, single-blinded clinical study, 8 consecutive patients undergoing deep-plane rhytidectomy were selected. SSP devices were placed on the patients' posterior rhytidectomy hairline incision; the mirror-image control site underwent standard suturing techniques. Three blinded, independent raters assessed the treatment and control sides at 6-week and 4-month follow-up visits, using the Objective Scar Assessment Scale (OSAS), a validated scar assessment tool. The 6-week OSAS scores revealed an 18.4% improvement on the side with the SSP device (13.3) when compared to the control side (16.3). The 4-month OSAS scores showed a 27.3% improvement on the treatment side from 12.7 (control) to 9.2 (SSP). These OSAS results were found to be statistically significant when taken as an aggregate of the observers' scores, but not when observers' scores were measured individually (p < 0.05). In our series of patients, we showed promising results with the use of the SSP device. Early silicone application and tissue tension distribution contributed to an overall more aesthetically pleasing scar compared to those seen with standard suturing techniques, although more testing is required.

Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

da Silva, D. S.; Côrtes, A. D. S.; Oliveira, M. H.; Motta, E. F.; Viana, G. A.; Mei, P. R.; Marques, F. C.

2011-08-01

We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO2) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF2) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, Jsc, was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF2). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability.

Analysis and amelioration about the cross-sensitivity of a high resolution MOEMS accelerometer based on diffraction grating

NASA Astrophysics Data System (ADS)

Lu, Qianbo; Bai, Jian; Wang, Kaiwei; Lou, Shuqi; Jiao, Xufen; Han, Dandan

2016-10-01

Cross-sensitivity is a crucial parameter since it detrimentally affect the performance of an accelerometer, especially for a high resolution accelerometer. In this paper, a suite of analytical and finite-elements-method (FEM) models for characterizing the mechanism and features of the cross-sensitivity of a single-axis MOEMS accelerometer composed of a diffraction grating and a micromachined mechanical sensing chip are presented, which have not been systematically investigated yet. The mechanism and phenomena of the cross-sensitivity of this type MOEMS accelerometer based on diffraction grating differ quite a lot from the traditional ones owing to the identical sensing principle. By analyzing the models, some ameliorations and the modified design are put forward to suppress the cross-sensitivity. The modified design, achieved by double sides etching on a specific double-substrate-layer silicon-on-insulator (SOI) wafer, is validated to have a far smaller cross-sensitivity compared with the design previously reported in the literature. Moreover, this design can suppress the cross-sensitivity dramatically without compromising the acceleration sensitivity and resolution.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Endodontic treatment and esthetic management of a primary double tooth with direct composite using silicone buildup guide.

PubMed

Kulkarni, Vinaya Kumar; Ragavendra, T Raju; Deshmukh, Jeevanand; Vanka, Amit; Duddu, Mahesh Kumar; Patil, Anand Kumar G

2012-04-01

Gemination and fusion are morphological dental anomalies, characterized by the formation of a clinically wide tooth. Gemination occurs when one tooth bud tries to divide, while fusion occurs if two buds unite. The terms double teeth, double formation, conjoined teeth, geminifusion, vicinifusion and dental twinning are often used to describe fusion and gemination. Double teeth are associated with clinical problems such as poor esthetics, spacing problems and caries susceptibility. Management of such cases requires a comprehensive knowledge of the clinical entity as well as the problems associated with it. This report presents a case of primary double tooth in a 6-year-old boy involving maxillary left central incisor. The anomalous tooth was carious and pulpally involved. This was treated conservatively by endodontic treatment and esthetic rehabilitation was done with direct composite restoration using a silicone buildup guide. The treated tooth was followed up until exfoliation.

Endodontic treatment and esthetic management of a primary double tooth with direct composite using silicone buildup guide

PubMed Central

Kulkarni, Vinaya Kumar; Ragavendra, T. Raju; Deshmukh, Jeevanand; Vanka, Amit; Duddu, Mahesh Kumar; Patil, Anand Kumar G.

2012-01-01

Gemination and fusion are morphological dental anomalies, characterized by the formation of a clinically wide tooth. Gemination occurs when one tooth bud tries to divide, while fusion occurs if two buds unite. The terms double teeth, double formation, conjoined teeth, geminifusion, vicinifusion and dental twinning are often used to describe fusion and gemination. Double teeth are associated with clinical problems such as poor esthetics, spacing problems and caries susceptibility. Management of such cases requires a comprehensive knowledge of the clinical entity as well as the problems associated with it. This report presents a case of primary double tooth in a 6-year-old boy involving maxillary left central incisor. The anomalous tooth was carious and pulpally involved. This was treated conservatively by endodontic treatment and esthetic rehabilitation was done with direct composite restoration using a silicone buildup guide. The treated tooth was followed up until exfoliation. PMID:22629077

Skin-Inspired Hydrogel-Elastomer Composite with Application in a Moisture Permeable Prosthetic Limb Liner

NASA Astrophysics Data System (ADS)

Ruiz, Esteban

Recent advances in fields such as 3D printing, and biomaterials, have enabled the development of a moisture permeable prosthetic liner. This project demonstrates the feasibility of the invention by addressing the three primary areas of risk including the mechanical strength, the permeability, and the ability to manufacture. The key enabling technology which allows the liner to operate is the skin inspired hydrogel elastomer composite. The skin inspiration is reflected in the molecular arrangement of the double network of polymers which mimics collagen-elastin toughening in the natural epidermis. A custom formulation for a novel tough double network nanocomposite reinforced hydrogel was developed to improve manufacturability of the liner. The liner features this double network nanocomposite reinforced hydrogel as a permeable membrane which is reinforced on either side by perforated silicone layers manufactured by 3d printing assisted casting. Uniaxial compression tests were conducted on the individual hydrogels, as well as a representative sample of off the shelf prosthetic liners for comparison. Permeability testing was also done on the same set of materials and compared to literature values for traditional hydrogels. This work led to the manufacture of three generations of liner prototypes, with the second and third liner prototype being tested with human participants.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Femtosecond laser-induced periodic surface structures on silicon upon polarization controlled two-color double-pulse irradiation.

PubMed

Höhm, Sandra; Herzlieb, Marcel; Rosenfeld, Arkadi; Krüger, Jörg; Bonse, Jörn

2015-01-12

Two-color double-fs-pulse experiments were performed on silicon wafers to study the temporally distributed energy deposition in the formation of laser-induced periodic surface structures (LIPSS). A Mach-Zehnder interferometer generated parallel or cross-polarized double-pulse sequences at 400 and 800 nm wavelength, with inter-pulse delays up to a few picoseconds between the sub-ablation 50-fs-pulses. Multiple two-color double-pulse sequences were collinearly focused by a spherical mirror to the sample. The resulting LIPSS characteristics (periods, areas) were analyzed by scanning electron microscopy. A wavelength-dependent plasmonic mechanism is proposed to explain the delay-dependence of the LIPSS. These two-color experiments extend previous single-color studies and prove the importance of the ultrafast energy deposition for LIPSS formation.

Comparison of light and x-ray sensitometric responses of double-emulsion films for different processing conditions.

PubMed

Blendl, C; Buhr, E

2001-12-01

The effects of different film processing conditions on light and x-ray sensitometric responses were compared for a variety of double-emulsion x-ray films. The processing conditions were altered by changes of the developer temperature. Three different exposure variants were applied: x-ray sensitometry using two stepped neutral density attenuators between film and screens, simultaneous double-sided light sensitometry, and single-sided light sensitometry. 13 different types of double-emulsion x-ray films were investigated, among them three asymmetric films. In the special case of exposing the asymmetric films with the single-sided light sensitometer, a method was investigated where each side of the film is exposed at different locations and the sum effect is analyzed. From each sensitometric curve shape two parameters, the logarithmic speed (logS) and the average gradient (G), were evaluated. The results of this study can be summarized as follows: (1) Single-sided and double-sided light sensitometers revealed almost equal changes of logS when the processing conditions are altered. Thus, single-sided light sensitometers can serve as a substitute for double-sided light sensitometers provided that suited exposure methods are used and appropriate sensitometric parameters are evaluated. (2) Light sensitometry quantitatively indicated changes of the film processing that affect the x-ray speed. Hence, light sensitometry is a useful method to monitor changes in film processing.

System and method for liquid silicon containment

DOEpatents

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

System and method for liquid silicon containment

DOEpatents

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Double Mine Building, interior detail to southeast Fort McKinley, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Double Mine Building, interior detail to southeast - Fort McKinley, Double Mine Building, East side of East Side Drive, approximately 125 feet south of Weymouth Way, Great Diamond Island, Portland, Cumberland County, ME

A facile electrode preparation method for accurate electrochemical measurements of double-side-coated electrode from commercial Li-ion batteries

NASA Astrophysics Data System (ADS)

Zhou, Ge; Wang, Qiyu; Wang, Shuo; Ling, Shigang; Zheng, Jieyun; Yu, Xiqian; Li, Hong

2018-04-01

The post mortem electrochemical analysis, including charge-discharge and electrochemical impedance spectroscopy (EIS) measurements, are critical steps for revealing the failure mechanisms of commercial lithium-ion batteries (LIBs). These post measurements usually require the reassembling of coin-cell with electrode which is often double-side-coated in commercial LIBs. It is difficult to use such double-side-coated electrode to perform accurate electrochemical measurements because the back side of the electrode is coated with active materials, rather than single-side-coated electrode that is often used in coin-cell measurements. In this study, we report a facile tape-covering sample preparation method, which can effectively suppress the influence of back side of the double-side-coated electrodes on capacity and EIS measurements in coin-cells. By tape-covering the unwanted side, the areal capacity of the desired investigated side of the electrode has been accurately measured with an experimental error of about 0.5% at various current densities, and accurate EIS measurements and analysis have been conducted as well.

22. FIFTH FLOOR BLDG. 28A, DETAIL DOUBLE DOORS SOUND TEST ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

22. FIFTH FLOOR BLDG. 28A, DETAIL DOUBLE DOORS SOUND TEST ROOM LOOKING NORTH. - Fafnir Bearing Plant, Bounded on North side by Myrtle Street, on South side by Orange Street, on East side by Booth Street & on West side by Grove Street, New Britain, Hartford County, CT

Double Mine Building, general view in setting; view northeast ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Double Mine Building, general view in setting; view northeast - Fort McKinley, Double Mine Building, East side of East Side Drive, approximately 125 feet south of Weymouth Way, Great Diamond Island, Portland, Cumberland County, ME

Quasi-optical antenna-mixer-array design for terahertz frequencies

NASA Technical Reports Server (NTRS)

Guo, Yong; Potter, Kent A.; Rutledge, David B.

1992-01-01

A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

PAMELA: A Satellite Experiment for Antiparticles Measurement in Cosmic Rays

NASA Astrophysics Data System (ADS)

Bongi, M.; Adriani, O.; Ambriola, M.; Bakaldin, A.; Barbarino, G. C.; Basili, A.; Bazilevskaja, G.; Bellotti, R.; Bencardino, R.; Boezio, M.; Bogomolov, E. A.; Bonechi, L.; Bongiorno, L.; Bonvicini, V.; Boscherini, M.; Cafagna, F. S.; Campana, D.; Carlson, P.; Casolino, M.; Castellini, G.; Circella, M.; De Marzo, C. N.; De Pascale, M. P.; Furano, G.; Galper, A. M.; Giglietto, N.; Grigorjeva, A.; Koldashov, S. V.; Korotkov, M. G.; Krut'kov, S. Y.; Lund, J.; Lundquist, J.; Menicucci, A.; Menn, W.; Mikhailov, V. V.; Minori, M.; Mirizzi, N.; Mitchell, J. W.; Mocchiutti, E.; Morselli, A.; Mukhametshin, R.; Orsi, S.; Osteria, G.; Papini, P.; Pearce, M.; Picozza, P.; Ricci, M.; Ricciarini, S. B.; Romita, M.; Rossi, G.; Russo, S.; Schiavon, P.; Simon, M.; Sparvoli, R.; Spillantini, P.; Spinelli, P.; Stochaj, S. J.; Stozhkov, Y.; Straulino, S.; Streitmatter, R. E.; Taccetti, F.; Vacchi, A.; Vannuccini, E.; Vasilyev, G. I.; Voronov, S. A.; Wischnewski, R.; Yurkin, Y.; Zampa, G.; Zampa, N.

2004-06-01

PAMELA is a satellite-borne experiment that will study the antiproton and positron fluxes in cosmic rays in a wide range of energy (from 80 MeV up to 190 GeV for antiprotons and from 50 MeV up to 270 GeV for positrons) and with high statistics, and that will measure the antihelium/helium ratio with a sensitivity of the order of 10/sup -8/. The detector will fly on-board a polar orbiting Resurs DK1 satellite, which will be launched into space by a Soyuz rocket in 2004 from Baikonur cosmodrome in Kazakhstan, for a 3-year-long mission. Particle identification and energy measurements are performed in the PAMELA apparatus using the following subdetectors: a magnetic spectrometer made up of a permanent magnet equipped with double-sided microstrip silicon detectors, an electromagnetic imaging calorimeter composed of layers of tungsten absorber and silicon detectors planes, a transition radiation detector made of straw tubes interleaved with carbon fiber radiators, a plastic scintillator time-of-flight and trigger system, a set of anticounter plastic scintillator detectors, and a neutron detector. The features of the detectors and the main results obtained in beam test sessions are presented.

The Focusing Optics X-ray Solar Imager (FOXSI)

NASA Astrophysics Data System (ADS)

Krucker, S.

2011-12-01

The Focusing Optics X-ray Solar Imager (FOXSI) is a NASA Low Cost Access to Space sounding rocket payload that will launch in early 2012. A larger sensitivity and dynamic range than currently available are needed in order to image faint X-rays from electron beams in the tenuous corona, particularly those near the coronal acceleration region and those that escape into interplanetary space. FOXSI combines nested, grazing-incidence replicated optics with double-sided silicon strip detectors to achieve a dynamic range of >100 and a sensitivity 100 times that of RHESSI. Advances in the fabrication and assembly of the optics at the NASA Marshall Space Flight Center provide a spatial resolution of 8 arcseconds (FWHM), while the silicon detectors, developed by the Astro-H team at ISAS/JAXA, offer an energy resolution of 0.4 keV. FOXSI's first flight will conduct a search for nonthermal electrons in the quiet Sun, possibly related to nanoflares. FOXSI will serve as a pathfinder for future space-based solar hard X-ray spectroscopic imagers, which will be able to image nonthermal electrons in flare acceleration sites and provide quantitative measurements such as energy spectra, densities, and energy content in accelerated electrons.

The Focusing Optics X-ray Solar Imager

NASA Astrophysics Data System (ADS)

Glesener, Lindsay; Krucker, S.; Christe, S.; Ramsey, B.; Ishikawa, S.; Takahashi, T.; Saito, S.

2011-05-01

The Focusing Optics X-ray Solar Imager (FOXSI) is a NASA Low Cost Access to Space sounding rocket payload that will launch in late 2011. A larger sensitivity and dynamic range than currently available are needed in order to image faint X-rays from electron beams in the tenuous corona, particularly those near any coronal acceleration region and those that escape into interplanetary space. FOXSI combines fast-replication, nested, grazing-incidence optics with double-sided silicon strip detectors to achieve a dynamic range of >100 and a sensitivity 100 times that of RHESSI. Advances in the fabrication and assembly of the optics at the NASA Marshall Space Flight Center provide a spatial resolution of 8 arcseconds, while the silicon detectors, developed by the Astro-H team at ISAS/JAXA, offer an energy resolution of 0.5 keV. FOXSI's first flight will be used to conduct a search for X-ray emission from nonthermal electron beams in quiet Sun nanoflares. In addition, FOXSI will serve as a pathfinder for future space-based solar hard X-ray spectroscopic imagers, which will be able to image nonthermal electrons in flare acceleration sites and provide quantitative measurements such as energy spectra, densities, and energy content in accelerated electrons.

A time-based front-end ASIC for the silicon micro strip sensors of the bar PANDA Micro Vertex Detector

NASA Astrophysics Data System (ADS)

Di Pietro, V.; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Zambanini, A.

2016-03-01

The bar PANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA (bar PANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels.

Surface modification of silicon wafer by grafting zwitterionic polymers to improve its antifouling property

NASA Astrophysics Data System (ADS)

Sun, Yunlong; Chen, Changlin; Xu, Heng; Lei, Kun; Xu, Guanzhe; Zhao, Li; Lang, Meidong

2017-10-01

Silicon (111) wafer was modified by triethoxyvinylsilane containing double bond as an intermedium, and then P4VP (polymer 4-vinyl pyridine) brush was "grafted" onto the surface of silicon wafer containing reactive double bonds by adopting the "grafting from" way and Si-P4VP substrate (silicon wafer grafted by P4VP) was obtained. Finally, P4VP brush of Si-P4VP substrate was modified by 1,3-propanesulfonate fully to obtain P4VP-psl brush (zwitterionic polypyridinium salt) and the functional Si-P4VP-psl substrate (silicon wafer grafted by zwitterionic polypyridinium salt based on polymer 4-vinyl pyridine) was obtained successfully. The antifouling property of the silicon wafer, the Si-P4VP substrate and the Si-P4VP-psl substrate was investigated by using bovine serum albumin, mononuclear macrophages (RAW 264.7) and Escherichia coli (E. coli) ATTC25922 as model bacterium. The results showed that compared with the blank sample-silicon wafer, the Si-P4VP-psl substrate had excellent anti-adhesion ability against bovine serum albumin, cells and bacterium, due to zwitterionic P4VP-psl brush (polymer 4-vinyl pyridine salt) having special functionality like antifouling ability on biomaterial field.

Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lauermann, M.; Weimann, C.; Palmer, R.

2014-05-27

We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB.

Covalent Surface Modification of Silicon Oxides with Alcohols in Polar Aprotic Solvents.

PubMed

Lee, Austin W H; Gates, Byron D

2017-09-05

Alcohol-based monolayers were successfully formed on the surfaces of silicon oxides through reactions performed in polar aprotic solvents. Monolayers prepared from alcohol-based reagents have been previously introduced as an alternative approach to covalently modify the surfaces of silicon oxides. These reagents are readily available, widely distributed, and are minimally susceptible to side reactions with ambient moisture. A limitation of using alcohol-based compounds is that previous reactions required relatively high temperatures in neat solutions, which can degrade some alcohol compounds or could lead to other unwanted side reactions during the formation of the monolayers. To overcome these challenges, we investigate the condensation reaction of alcohols on silicon oxides carried out in polar aprotic solvents. In particular, propylene carbonate has been identified as a polar aprotic solvent that is relatively nontoxic, readily accessible, and can facilitate the formation of alcohol-based monolayers. We have successfully demonstrated this approach for tuning the surface chemistry of silicon oxide surfaces with a variety of alcohol containing compounds. The strategy introduced in this research can be utilized to create silicon oxide surfaces with hydrophobic, oleophobic, or charged functionalities.

Influence of backside loading on the floating mass transducer: An in vitro experimental study.

PubMed

Gostian, A-O; Otte, M S; Pazen, D; Ortmann, M; Schwarz, D; Hüttenbrink, K B; Beutner, D

2018-04-01

The vibration of the floating mass transducer (FMT) of a single active middle-ear implant (AMEI) is distinctly influenced by the properties of the material coupled to its back side. In round window vibroplasty, the FMT needs to be padded against the surrounding bone opposite from the round window membrane. This represents one factor influencing its performance as a round window driver. Therefore, we examined the effects of different materials linked to the back side of an FMT on its vibration range. The back side of an FMT was glued to a silicone cylinder 1.0 mm in diameter and 1.0 mm - 1.5 mm in length and of 40A, 50A or 70A Shore hardness; to cartilage of equivalent size; or to a round window soft coupler (RWSC), all firmly fixed on a steel plate. The vibrations were determined by a laser Doppler vibrometer (LDV) measuring the velocity of the centre point on the front side of the FMT. The materials on the back side of the FMT significantly influenced the vibration range of the FMT. The RWSC and silicone of 40A Shore hardness allowed for the highest detected velocities, while cartilage led to a distinct reduction similarly to 70A silicone. The coupling on the back side of an FMT distinctly affects its vibration range. In this regard, the RWSC and silicone of 40A Shore hardness yield the least impairment of vibration. Thus, the RWSC may be a feasible option in round window vibroplasty when additionally connected to the FMT opposite from the round window membrane. © 2017 John Wiley & Sons Ltd.

Platinum concentration in silicone breast implant material and capsular tissue by ICP-MS.

PubMed

Maharaj, S V M

2004-09-01

Inductively coupled plasma-mass spectrometry (ICP-MS) was used to determine the concentration of platinum (Pt) in silicone breast implant gel (range, 0.26-48.90 microg g(-1) Pt; n=15), elastomer (range, 3.05-28.78 microg g(-1) Pt; n=7), double lumen (range, 5.79-125.27 microg g(-1) Pt; n=7), foam (range, 5.79-8.36 microg g(-1) Pt; n=2), and capsular tissue (range, 0.003-0.272 microg g(-1) Pt; n=15). The results show that very high levels of Pt are present in the encasing elastomer, double lumen, and foam envelope materials. Silicone breast implants can be a source of significant Pt exposure for individuals with these implants.

Process for making silicon from halosilanes and halosilicons

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Process for making silicon

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Numerical analysis of urine flow through the side holes of a double J stent in a ureteral stenosis.

PubMed

Kim, Hyoung-Ho; Choi, Young Ho; Lee, Seung Bae; Baba, Yasutaka; Kim, Kyung-Wuk; Suh, Sang-Ho

2017-07-20

Ureteral stenosis presents with a narrowing in the ureter, due to an intrinsic or extrinsic ureteral disease, such as ureter cancer or retroperitoneal fibrosis. The placement of a double J stent in the upper urinary system is one of the most common treatments of ureteral stenosis, along with the insertion of a percutaneous nephrostomy tube into the renal pelvis. The effect that the side holes in a double J stent have on urine flow has been evaluated in a few studies using straight ureter models. In this study, urine flow through a double J stent's side holes was analyzed in curved ureter models, which were based on human anatomy. In ureteral stenosis, especially in severe ureteral stenosis, a stent with side holes had a positive effect on the luminal and total flow rates, compared with the rates for a stent without side holes. The more side holes a stent has, the greater the luminal and total flow rates. However, the angular positions of the side holes did not affect flow rate. In conclusion, the side holes in a double J stent had a positive effect on ureteral stenosis, and the effect became greater as the ureteral stenosis became more severe.

Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin

2016-11-14

For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

Optimization of the Surface Structure on Black Silicon for Surface Passivation

NASA Astrophysics Data System (ADS)

Jia, Xiaojie; Zhou, Chunlan; Wang, Wenjing

2017-03-01

Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al2O3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH4OH/H2O2/H2O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.

Optimization of the Surface Structure on Black Silicon for Surface Passivation.

PubMed

Jia, Xiaojie; Zhou, Chunlan; Wang, Wenjing

2017-12-01

Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al 2 O 3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH 4 OH/H 2 O 2 /H 2 O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.

Performance study of double SOI image sensors

NASA Astrophysics Data System (ADS)

Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

2018-02-01

Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

Design and Fabrication of Electrostatically Actuated Silicon Microshutters Arrays

NASA Technical Reports Server (NTRS)

Oh, L.; Li, M.; Kim, K.; Kelly, D.; Kutyrev, A.; Moseley, S.

2017-01-01

We have developed a new fabrication process to actuate microshutter arrays (MSA) electrostatically at NASA Goddard Space Flight Center. The microshutters are fabricated on silicon with thin silicon nitride membranes. A pixel size of each microshutter is 100 x 200 micrometers 2. The microshutters rotate 90 degrees on torsion bars. The selected microshutters are actuated, held, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The atomic layer deposition (ALD) of aluminum oxide was used to insulate electrodes on the back side of walls; the insulation can withstand over 100 V. The ALD aluminum oxide is dry etched, and then the microshutters are released in vapor HF.

The "Double" Tessier 7 Cleft: An Unusual Presentation of a Transverse Facial Cleft.

PubMed

Raveendran, Janani A; Chao, Jerry W; Rogers, Gary F; Boyajian, Michael J

2018-07-01

Congenital macrostomia, or Tessier number 7 cleft, is a rare craniofacial anomaly. We present a unique patient with bilateral macrostomia that consisted of a "double" transverse cleft on the left side and a single transverse cleft on the right side. A staged reconstructive approach was used to repair the "double" left-sided clefts. This staged technique produced a satisfactory aesthetic and functional outcome.

Systematic analysis of diffuse rear reflectors for enhanced light trapping in silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pfeffer, Florian; Eisenlohr, Johannes; Basch, Angelika

Simple diffuse rear reflectors can enhance the light path length of weakly absorbed near infrared light in silicon solar cells and set a benchmark for more complex and expensive light trapping structures like dielectric gratings or plasmonic particles. We analyzed such simple diffuse rear reflectors systematically by optical and electrical measurements. We applied white paint, TiO 2 nanoparticles, white backsheets and a silver mirror to bifacial silicon solar cells and measured the enhancement of the external quantum efficiency for three different solar cell geometries: planar front and rear side, textured front and planar rear side, and textured front and rearmore » side. We showed that an air-gap between the solar cell and the reflector decreases the absorption enhancement significantly, thus white paint and TiO 2 nanoparticles directly applied to the rear cell surface lead to the highest short circuit current density enhancements. Here, the short circuit current density gains for a 200 um thick planar solar cell reached up to 1.8 mA/cm 2, compared to a non-reflecting black rear side and up to 0.8 mA/cm 2 compared to a high-quality silver mirror rear side. For solar cells with textured front side the short circuit current density gains are in the range between 0.5 and 1.0 mA/cm 2 compared to a non-reflecting black rear side and do not significantly depend on the angular characteristic of the rear side reflector but mainly on its absolute reflectance.« less

Systematic analysis of diffuse rear reflectors for enhanced light trapping in silicon solar cells

DOE PAGES

Pfeffer, Florian; Eisenlohr, Johannes; Basch, Angelika; ...

2016-04-08

Simple diffuse rear reflectors can enhance the light path length of weakly absorbed near infrared light in silicon solar cells and set a benchmark for more complex and expensive light trapping structures like dielectric gratings or plasmonic particles. We analyzed such simple diffuse rear reflectors systematically by optical and electrical measurements. We applied white paint, TiO 2 nanoparticles, white backsheets and a silver mirror to bifacial silicon solar cells and measured the enhancement of the external quantum efficiency for three different solar cell geometries: planar front and rear side, textured front and planar rear side, and textured front and rearmore » side. We showed that an air-gap between the solar cell and the reflector decreases the absorption enhancement significantly, thus white paint and TiO 2 nanoparticles directly applied to the rear cell surface lead to the highest short circuit current density enhancements. Here, the short circuit current density gains for a 200 um thick planar solar cell reached up to 1.8 mA/cm 2, compared to a non-reflecting black rear side and up to 0.8 mA/cm 2 compared to a high-quality silver mirror rear side. For solar cells with textured front side the short circuit current density gains are in the range between 0.5 and 1.0 mA/cm 2 compared to a non-reflecting black rear side and do not significantly depend on the angular characteristic of the rear side reflector but mainly on its absolute reflectance.« less

Liquid argon scintillation read-out with silicon devices

NASA Astrophysics Data System (ADS)

Canci, N.; Cattadori, C.; D'Incecco, M.; Lehnert, B.; Machado, A. A.; Riboldi, S.; Sablone, D.; Segreto, E.; Vignoli, C.

2013-10-01

Silicon photosensors represent a viable alternative to standard photomultipliers in fields such as communications and medical imaging. We explored the interesting possibility of using these sensors in combination with liquid argon (LAr) for astroparticle physics applications such as neutrino, dark matter and double beta decay experiments. In fact, silicon photosensors have detection efficiencies comparable with those of the highest performance PMTs and can be manufactured with high level of radiopurity. In particular within the on-going R&D activity of the SILENT project (Low background and low noise techniques for double beta decay physics funded by ASPERA) a large area SiPM (Silicon PhotoMultiplier - Hamamatsu S11828-3344M - 1.7 cm2 area) has been installed in a LAr scintillation chamber of 0.5 liters volume together with a cryogenic photomultiplier tube (Hamamatsu R11065) used as a reference. The liquid argon chamber has been exposed to many gamma sources of different energies and single photoelectron response and light yield for the SiPM and PMT have been measured and compared. In this contribution the results of the tests, and the ongoing R&D to optimize the SiPM for cryogenic and for ultralow background applications, are reported, as well as the possible application in the GERDA experiment on Double Beta Decay Searches of 76Ge.

Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis.

PubMed

Hong, Feng; Wei, Bin; Chen, Lin

2015-01-01

Bacterial nanocellulose (BNC) has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine.

Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis

PubMed Central

Wei, Bin; Chen, Lin

2015-01-01

Bacterial nanocellulose (BNC) has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine. PMID:26090420

Multi-pinhole collimator design for small-object imaging with SiliSPECT: a high-resolution SPECT

NASA Astrophysics Data System (ADS)

Shokouhi, S.; Metzler, S. D.; Wilson, D. W.; Peterson, T. E.

2009-01-01

We have designed a multi-pinhole collimator for a dual-headed, stationary SPECT system that incorporates high-resolution silicon double-sided strip detectors. The compact camera design of our system enables imaging at source-collimator distances between 20 and 30 mm. Our analytical calculations show that using knife-edge pinholes with small-opening angles or cylindrically shaped pinholes in a focused, multi-pinhole configuration in combination with this camera geometry can generate narrow sensitivity profiles across the field of view that can be useful for imaging small objects at high sensitivity and resolution. The current prototype system uses two collimators each containing 127 cylindrically shaped pinholes that are focused toward a target volume. Our goal is imaging objects such as a mouse brain, which could find potential applications in molecular imaging.

Free-standing GaN grating couplers and rib waveguide for planar photonics at telecommunication wavelength

NASA Astrophysics Data System (ADS)

Liu, Qifa; Wang, Wei

2018-01-01

Gallium Nitride (GaN) free-standing planar photonic device at telecommunication wavelength based on GaN-on-silicon platform was presented. The free-standing structure was realized by particular double-side fabrication process, which combining GaN front patterning, Si substrate back releasing and GaN slab etching. The actual device parameters were identified via the physical characterizations employing scanning electron microscope (SEM), atomic force microscope (AFM) and reflectance spectra testing. High coupling efficiency and good light confinement properties of the gratings and rib waveguide at telecommunication wavelength range were verified by finite element method (FEM) simulation. This work illustrates the potential of new GaN photonic structure which will enable new functions for planar photonics in communication and sensing applications, and is favorable for the realization of integrated optical circuit.

Effects of aging on the structural, mechanical, and thermal properties of the silicone rubber current transformer insulation bushing for a 500 kV substation.

PubMed

Wang, Zhigao; Zhang, Xinghai; Wang, Fangqiang; Lan, Xinsheng; Zhou, Yiqian

2016-01-01

In order to analyze the cracking and aging reason of the silicone rubber current transformer (CT) insulation bushing used for 8 years from a 500 kV alternating current substation, characteristics including Fourier transform infrared (FTIR) spectroscopy, mechanical properties analysis, hardness, and thermo gravimetric analysis have been carried out. The FTIR results indicated that the external surface of the silicone rubber CT insulation bushing suffered from more serious aging than the internal part, fracture of side chain Si-C bond was much more than the backbone. Mechanical properties and thermal stability results illustrated that the main aging reasons were the breakage of side chain Si-C bond and the excessive cross-linking reaction of the backbone. This study can provide valuable basis for evaluating degradation mechanism and aging state of the silicone rubber insulation bushing in electric power field.

Lamb wave band gaps in a double-sided phononic plate

NASA Astrophysics Data System (ADS)

Wang, Peng; Chen, Tian-Ning; Yu, Kun-Peng; Wang, Xiao-Peng

2013-02-01

In this paper, we report on the theoretical investigation of the propagation characteristics of Lamb wave in a phononic crystal structure constituted by a square array of cylindrical stubs deposited on both sides of a thin homogeneous plate. The dispersion relations, the power transmission spectra, and the displacement fields of the eigenmodes are studied by using the finite-element method. We investigate the evolution of band gaps in the double-sided phononic plate with stub height on both sides arranged from an asymmetrical distribution to a symmetrical distribution gradually. Numerical results show that as the double stubs in a unit cell arranged more symmetrically on both sides, band width shifts, new band gaps appear, and the bands become flat due to localized resonant modes which couple with plate modes. Specially, more band gaps and flat bands can be found in the symmetrical system as a result of local resonances of the stubs which interact in a stronger way with the plate modes. Moreover, the symmetrical double-sided plate exhibits lower and smaller band gap than that of the asymmetrical plate. These propagation properties of elastic or acoustic waves in the double-sided plate can potentially be utilized to generate filters, slow the group velocity, low-frequency sound insulation, and design acoustic sensors.

Strong spin-photon coupling in silicon

NASA Astrophysics Data System (ADS)

Samkharadze, N.; Zheng, G.; Kalhor, N.; Brousse, D.; Sammak, A.; Mendes, U. C.; Blais, A.; Scappucci, G.; Vandersypen, L. M. K.

2018-03-01

Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. As a first step to address this issue, we demonstrate the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. Our results provide a route to realizing large networks of quantum dot–based spin qubit registers.

Method of Fabricating Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

NASA Technical Reports Server (NTRS)

Choi, Sang Hyouk (Inventor); Park, Yeonjoon (Inventor)

2017-01-01

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2016-01-01

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Drainage characteristics of the 3F MicroStent using a novel film occlusion anchoring mechanism.

PubMed

Lange, Dirk; Hoag, Nathan A; Poh, Beow Kiong; Chew, Ben H

2011-06-01

To determine whether the overall ureteral flow through an obstructed ureter using the 3F MicroStent™ that uses a novel film occlusion anchoring mechanism is comparable to the flow using a conventional 3F and 4.7F Double-J stent. An in vitro silicone ureter model and an ex vivo porcine urinary model (kidney and ureter) were used to measure the overall flow through obstructed and unobstructed ureters with either a 3F Double-J stent (Cook), 3F MicroStent (PercSys), or 4.7F Double-J stent (Cook). Mean flow rates were compared with descriptive statistics. Mean flow rates through the obstructed silicone ureter (12-mm stone) for the 3F MicroStent, 3F Double-J stent, and 4.7F Double-J stent were 326.7±13.3  mL/min, 283.3±19.2  mL/min, and 356.7±14.1  mL/min, respectively. In the obstructed ex vivo porcine ureter model, the flow as a percentage of free flow was 60%, 53%, and 50 %, respectively. In both ureteral models, flow rates of the 3F MicroStent and 4.7F Double-J stents were not statistically different. The 3F MicroStent demonstrated drainage equivalent to a 4.7F Double-J stent, in both in vitro silicone and ex vivo porcine obstructed urinary models. We have demonstrated the crucial first step that this 3F stent, using a novel film occlusion anchoring mechanism, has equivalent, if not slightly improved, drainage rates when compared with its larger counterpart.

A double-sided microscope to realize whole-ganglion imaging of membrane potential in the medicinal leech

PubMed Central

Wagenaar, Daniel A

2017-01-01

Studies of neuronal network emergence during sensory processing and motor control are greatly facilitated by technologies that allow us to simultaneously record the membrane potential dynamics of a large population of neurons in single cell resolution. To achieve whole-brain recording with the ability to detect both small synaptic potentials and action potentials, we developed a voltage-sensitive dye (VSD) imaging technique based on a double-sided microscope that can image two sides of a nervous system simultaneously. We applied this system to the segmental ganglia of the medicinal leech. Double-sided VSD imaging enabled simultaneous recording of membrane potential events from almost all of the identifiable neurons. Using data obtained from double-sided VSD imaging, we analyzed neuronal dynamics in both sensory processing and generation of behavior and constructed functional maps for identification of neurons contributing to these processes. PMID:28944754

Double-walled silicon nanotubes: an ab initio investigation

NASA Astrophysics Data System (ADS)

Lima, Matheus P.

2018-02-01

The synthesis of silicon nanotubes realized in the last decade demonstrates multi-walled tubular structures consisting of Si atoms in {{sp}}2 and the {{sp}}3 hybridizations. However, most of the theoretical models were elaborated taking as the starting point {{sp}}2 structures analogous to carbon nanotubes. These structures are unfavorable due to the natural tendency of the Si atoms to undergo {{sp}}3. In this work, through ab initio simulations based on density functional theory, we investigated double-walled silicon nanotubes proposing layered tubes possessing most of the Si atoms in an {{sp}}3 hybridization, and with few {{sp}}2 atoms localized at the outer wall. The lowest-energy structures have metallic behavior. Furthermore, the possibility to tune the band structure with the application of a strain was demonstrated, inducing a metal-semiconductor transition. Thus, the behavior of silicon nanotubes differs significantly from carbon nanotubes, and the main source of the differences is the distortions in the lattice associated with the tendency of Si to make four chemical bonds.

Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs

NASA Technical Reports Server (NTRS)

Grunthaner, Paula; Elliott, Stythe; Jones, Todd; Nikzad, Shouleh

2004-01-01

An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.

The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to bemore » promising for integrated chemical micro- and nanosensors.« less

First results from GaAs double-sided detectors

NASA Astrophysics Data System (ADS)

Beaumont, S. P.; Bertin, R.; Booth, C. N.; Buttar, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F. H.; D'Auria, S.; del Papa, C.; Dogru, M.; Edwards, M.; Foster, F.; Francescato, A.; Gowdy, S.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B. K.; Lynch, J. G.; Lisowski, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P. G.; Raine, C.; Santana, J.; Saunders, I. J.; Seller, P. H.; Shankar, K.; Sharp, P. H.; Skillicorn, I. O.; Sloan, T.; Smith, K. M.; ten Have, I.; Turnbull, R. M.; Vanni, U.; Zichichi, A.

1994-09-01

Preliminary results are presented on the performance of double-sided microstrip detectors using Schottky contacts on both sides of a semi-insulating (SI) GaAs substrate wafer, after exposure to 10 14 neutrons cm -2 at the ISIS facility. A qualitative explanation of the device behaviour is given.

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF.

PubMed

Wallace, Ryan A; Sepaniak, Michael J; Lavrik, Nickolay V; Datskos, Panos G

2017-06-06

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this work, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallace, Ryan A.; Sepaniak, Michael J.; Lavrik, Nickolay V.

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this paper, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Finally, profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Evaluation of Porous Silicon Oxide on Silicon Microcantilevers for Sensitive Detection of Gaseous HF

DOE PAGES

Wallace, Ryan A.; Sepaniak, Michael J.; Lavrik, Nickolay V.; ...

2017-05-10

Sensitive detection of harmful chemicals in industrial applications is pertinent to safety. In this paper, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the MCs that have been mechanically manipulated to increase sensitivity. Included is the evaluation of porous silicon oxide present on different geometries of MCs and exposed to varying concentrations of hydrogen fluoride in humid air. Finally, profilometry and the signal generated by the stress-induced porous silicon oxide (PSO) coating and bending of the MC were used as methods of evaluation.

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F.

2016-05-16

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

Simulation and optimization of a new focusing polarizing bender for the diffuse neutrons scattering spectrometer DNS at MLZ

NASA Astrophysics Data System (ADS)

Nemkovski, K.; Ioffe, A.; Su, Y.; Babcock, E.; Schweika, W.; Brückel, Th

2017-06-01

We present the concept and the results of the simulations of a new polarizer for the diffuse neutron scattering spectrometer DNS at MLZ. The concept of the polarizer is based on the idea of a bender made from the stack of the silicon wafers with a double-side supermirror polarizing coating and absorbing spacers in between. Owing to its compact design, such a system provides more free space for the arrangement of other instrument components. To reduce activation of the polarizer in the high intensity neutron beam of the DNS spectrometer we plan to use the Fe/Si supermirrors instead of currently used FeCoV/Ti:N ones. Using the VITESS simulation package we have performed simulations for horizontally focusing polarizing benders with different geometries in the combination with the double-focusing crystal monochromator of DNS. Neutron transmission and polarization efficiency as well as the effects of the focusing for convergent conventional C-benders and S-benders have been analyzed both for wedge-like and plane-parallel convergent geometries of the channels. The results of these simulations and the advantages/disadvantages of the various configurations are discussed.

Electrical machines and assemblies including a yokeless stator with modular lamination stacks

DOEpatents

Qu, Ronghai; Jansen, Patrick Lee; Bagepalli, Bharat Sampathkumar; Carl, Jr., Ralph James; Gadre, Aniruddha Dattatraya; Lopez, Fulton Jose

2010-04-06

An electrical machine includes a rotor with an inner rotor portion and an outer rotor portion, and a double-sided yokeless stator. The yokeless stator includes modular lamination stacks and is configured for radial magnetic flux flow. The double-sided yokeless stator is concentrically disposed between the inner rotor portion and the outer rotor portion of the electrical machine. Examples of particularly useful embodiments for the electrical machine include wind turbine generators, ship propulsion motors, switch reluctance machines and double-sided synchronous machines.

Scintillating fibres coupled to silicon photomultiplier prototypes for fast beam monitoring and thin timing detectors

NASA Astrophysics Data System (ADS)

Papa, A.; Kettle, P.-R.; Ripiccini, E.; Rutar, G.

2016-07-01

Several scintillating fibre prototypes (single- and double-layers) made of 250 μm multi-clad square fibres coupled to silicon photomultiplier have been studied using electrons, positrons and muons at different energies. Current measurements show promising results: already for a single fibre layer and minimum ionizing particles we obtain a detection efficiency ≥ 95 % (mean collected light/fibre ≈ 8 phe), a timing resolution of 550 ps/fibre and a foreseen spatial resolution < 100 μm, based on the achieved negligible optical cross-talk between fibres (< 1 %). We will also discuss the performances of a double-layer staggered prototype configuration, for which a full detection efficiency (≥ 99 %) has been measured together with a timing resolution of ≈ 400 ps for double hit events.

A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

NASA Astrophysics Data System (ADS)

Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

2015-05-01

This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

Design and properties of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Bar, Jan; Budzyński, Tadeusz; CieŻ, Michal; Grabiec, Piotr; Kozłowski, Roman; Kulawik, Jan; Panas, Andrzej; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecka, Iwona; Wielunski, Marek; Witek, Krzysztof; Yakushev, Alexander; Zaborowski, Michał

2013-07-01

The paper discusses the design of charged-particle detectors commissioned and developed at the Institute of Electron Technology (ITE) in collaboration with foreign partners, used in international research on transactinide elements and to build personal radiation protection devices in Germany. Properties of these detectors and the results obtained using the devices are also presented. The design of the following epiplanar detector structures is discussed: ♢ 64-element chromatographic arrays for the COMPACT (Cryo On-line Multidetector for Physics And Chemistry of Transactinides) detection system used at the GSI Helmholtzzentrum für Schwerionenforschung in Darmstadt (GSI) for research on Hassium, Copernicium and Flerovium, as well as elements 119 and 120, ♢ 2-element flow detectors for the COLD (Cryo On-Line Detector) system used for research on Copernicium and Flerovium at the Joint Institute for Nuclear Research, Dubna, ♢ detectors for a radon exposimeter and sensors for a neutron dosimeter developed at the Institut für Strahlenschutz, Helmholtz Zentrum München. The design of planar detectors - single-sided and double-sided strip detectors for the Focal Plane Detector Box used at GSI for research on Flerovium and elements 119 and 120 is also discussed.

Numerical analysis of the effect of side holes of a double J stent on flow rate and pattern.

PubMed

Kim, Kyung-Wuk; Choi, Young Ho; Lee, Seung Bae; Baba, Yasutaka; Kim, Hyoung-Ho; Suh, Sang-Ho

2015-01-01

A double J stent has been used widely these days for patients with a ureteral stenosis or with renal stones and lithotripsy. The stent has multiple side holes in the shaft, which supply detours for urine flow. Even though medical companies produce various forms of double J stents that have different numbers and positions of side holes in the stent, the function of side holes in fluid dynamics has not been studied well. Here, the flow rate and pattern around the side holes of a double J stent were evaluated in curved models of a stented ureter based on the human anatomy and straight models for comparison. The total flow rate was higher in the stent with a greater number of side holes. The inflow and outflow to the stent through the side holes in the curved ureter was more active than in the straight ureter, which means the flow through side holes exists even in the ureter without ureteral stenosis or occlusion and even in the straight ureter. When the diameter of the ureter changed, the in-stent flow rate in the ureter did not change and the extraluminal flow rate was higher in the ureter with a greater diameter.

Pull-in instability of paddle-type and double-sided NEMS sensors under the accelerating force

NASA Astrophysics Data System (ADS)

Keivani, M.; Khorsandi, J.; Mokhtari, J.; Kanani, A.; Abadian, N.; Abadyan, M.

2016-02-01

Paddle-type and double-sided nanostructures are potential for use as accelerometers in flying vehicles and aerospace applications. Herein the pull-in instability of the cantilever paddle-type and double-sided sensors in the Casimir regime are investigated under the acceleration. The D'Alembert principle is employed to transform the accelerating system into an equivalent static system by incorporating the accelerating force. Based on the couple stress theory (CST), the size-dependent constitutive equations of the sensors are derived. The governing nonlinear equations are solved by two approaches, i.e. modified variational iteration method and finite difference method. The influences of the Casimir force, geometrical parameters, acceleration and the size phenomenon on the instability performance have been demonstrated. The obtained results are beneficial to design and fabricate paddle-type and double-sided accelerometers.

FOXSI: Properties of optics and detectors for hard-X rays

NASA Astrophysics Data System (ADS)

Buitrago-Casas, Juan Camilo; Glesener, Lindsay; Christe, Steven; Krucker, Sam; Ishikawa, Shin-nosuke; Foster, Natalie

2015-04-01

The Focusing Optics X-ray Solar Imager (FOXSI) is a state-of-the-art direct focusing X-ray telescope designed to observe the Sun. This experiment completed its second flight onboard a sounding rocket last December 11, 2014 from the White Sands Missile Range in New Mexico. The optics use a set of iridium-coated nickel/cobalt mirrors made using a replication technique based on an electroformed perfect polished surface. Since this technique creates full shells that no need to be co-aligned with other segments, an angular resolution of up to ~5 arcsec is gotten. The FOXSI focal plane consists of seven double-sided strip detectors. Five Silicon and 2 CdTe detectors were used during the second flight.We present on various properties of Wolter-I optics that are applicable to solar HXR observation, including ray-tracing simulations of the single-bounce (“ghost ray”) patterns from sources outside the field of view and angular resolution for different source angles and effective area measurements of the FOXSI optics. We also present the detectors calibration results, paying attention to energy resolution (~0.5 keV), energy thresholds (~4-15 keV for Silicon and ~4-20 keV for CdTe detectors), and spatial coherence of these values over the entire detector.

Design of a 1200-V ultra-thin partial SOI LDMOS with n-type buried layer

NASA Astrophysics Data System (ADS)

Qiao, Ming; Wang, Yuru; Li, Yanfei; Zhang, Bo; Li, Zhaoji

2014-11-01

A novel 1200-V ultra-thin partial silicon-on-insulator (PSOI) lateral double-diffusion metal oxide semiconductor (LDMOS) with n-type buried (n-buried) layer (NBL PSOI LDMOS) is proposed in this paper. The new PSOI LDMOS features an n-buried layer underneath the n-type drift (n-drift) region close to the source side, providing a large conduction region for majority carriers and a silicon window to improve self-heating effect (SHE). A combination of uniform and linear variable doping (ULVD) profile is utilized in the n-drift region, which alleviates the inherent tradeoff between specific on-resistance (Ron,sp) and breakdown voltage (BV). With the n-drift region length of 80 μm, the NBL PSOI LDMOS obtains a high BV of 1243 V which is improved by around 105 V in comparison to the conventional SOI LDMOS with linear variable doping (LVD) profile for the n-drift region (LVD SOI LDMOS). Besides, the 1200-V NBL PSOI LDMOS has a lower maximum temperature (Tmax) of 333 K at a power (P) of 1 mW/μm which is reduced by around 61 K. Meanwhile, Ron,sp and Tmax of the NBL PSOI LDMOS are lower than those of the conventional LVD SOI LDMOS for a wide range of BV.

Silicones in the rehabilitation of burns: a review and overview.

PubMed

Van den Kerckhove, E; Stappaerts, K; Boeckx, W; Van den Hof, B; Monstrey, S; Van der Kelen, A; De Cubber, J

2001-05-01

This article gives an overview of the use of silicones in the treatment and prevention of hypertrophic (burn related) scars. Of all non-invasive treatment modalities the use of continuous pressure and occlusive contact media, e.g. silicones, seem to be generally accepted as the only ones that are able to manage hypertrophic scarring without significant side-effects. A summary of the current opinions of the assumed working mechanisms of pressure as well as silicones is given. The use of silicones, either alone or in combination with pressure, is discussed. The recent development of custom made silicone devices has led to combinations of both modalities. Some of these, including the inflatable silicone insert systems (ISIS), are shown and discussed.

Synthesis of uniformly distributed single- and double-sided zinc oxide (ZnO) nanocombs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Altintas Yildirim, Ozlem; Liu, Yuzi; Petford-Long, Amanda K.

Uniformly distributed single- and double-sided zinc oxide (ZnO) nanocomb structures have been prepared by a vapor-liquid-solid technique from a mixture of ZnO nanoparticles and graphene nanoplatelets. The ZnO seed nanoparticles were synthesized via a simple precipitation method. The structure of the ZnO nanocombs could easily be controlled by tuning the carrier-gas flow rate during growth. Higher flow rate resulted in the formation of uniformly-distributed single-sided comb structures with nanonail-shaped teeth, as a result of the self-catalysis effect of the catalytically active Zn-terminated polar (0001) surface. Lower gas flow rate was favorable for production of double-sided comb structures with the twomore » sets of teeth at an angle of similar to 110 degrees to each other along the comb ribbon, which was attributed to the formation of a bicrystal nanocomb ribbon. Lastly, the formation of such a double-sided structure with nanonail-shaped teeth has not previously been reported.« less

Synthesis of uniformly distributed single- and double-sided zinc oxide (ZnO) nanocombs

DOE PAGES

Altintas Yildirim, Ozlem; Liu, Yuzi; Petford-Long, Amanda K.

2015-08-21

Uniformly distributed single- and double-sided zinc oxide (ZnO) nanocomb structures have been prepared by a vapor-liquid-solid technique from a mixture of ZnO nanoparticles and graphene nanoplatelets. The ZnO seed nanoparticles were synthesized via a simple precipitation method. The structure of the ZnO nanocombs could easily be controlled by tuning the carrier-gas flow rate during growth. Higher flow rate resulted in the formation of uniformly-distributed single-sided comb structures with nanonail-shaped teeth, as a result of the self-catalysis effect of the catalytically active Zn-terminated polar (0001) surface. Lower gas flow rate was favorable for production of double-sided comb structures with the twomore » sets of teeth at an angle of similar to 110 degrees to each other along the comb ribbon, which was attributed to the formation of a bicrystal nanocomb ribbon. Lastly, the formation of such a double-sided structure with nanonail-shaped teeth has not previously been reported.« less

Hard X-ray Detector Calibrations for the FOXSI Sounding Rocket

NASA Astrophysics Data System (ADS)

Lopez, A.; Glesener, L.; Buitrago Casas, J. C.; Han, R.; Ishikawa, S. N.; Christe, S.; Krucker, S.

2015-12-01

In the study of high-energy solar flares, detailed X-ray images and spectra of the Sun are required. The Focusing Optics X-ray Solar Imager (FOXSI) sounding rocket experiment is used to test direct-focusing X-ray telescopes and Double-sided Silicon Strip Detectors (DSSD) for solar flare study and to further understand coronal heating. The measurement of active region differential emission measures, flare temperatures, and possible quiet-Sun emission requires a precisely calibrated spectral response. This poster describes recent updates in the calibration of FOXSI's DSSDs based on new calibration tests that were performed after the second flight. The gain for each strip was recalculated using additional radioactive sources. Additionally, the varying strip sensitivity across the detectors was investigated and based on these measurements, the flight images were flatfielded. These improvements lead to more precise X-ray data for future FOXSI flights and show promise for these new technologies in imaging the Sun.

Double Mine Building (N) wall showing clerestory slot windows opening ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Double Mine Building (N) wall showing clerestory slot windows opening above level of main roof. Note structure is built on poured concrete foundation partly buried in hillside; view in southeast - Fort McKinley, Double Mine Building, East side of East Side Drive, approximately 125 feet south of Weymouth Way, Great Diamond Island, Portland, Cumberland County, ME

Method for double-sided processing of thin film transistors

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2008-04-08

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Electronically conductive polymer binder for lithium-ion battery electrode

DOEpatents

Liu, Gao; Xun, Shidi; Battaglia, Vincent S.; Zheng, Honghe; Wu, Mingyan

2015-07-07

A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

Electronically conductive polymer binder for lithium-ion battery electrode

DOEpatents

Liu, Gao; Battaglia, Vincent S.; Park, Sang -Jae

2015-10-06

A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

Electronically conductive polymer binder for lithium-ion battery electrode

DOEpatents

Liu, Gao; Xun, Shidi; Battaglia, Vincent S.; Zheng, Honghe; Wu, Mingyan

2017-08-01

A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

Regulating Effect of Asymmetrical Impeller on the Flow Distributions of Double-sided Centrifugal Compressor

NASA Astrophysics Data System (ADS)

Yang, Ce; Liu, Yixiong; Yang, Dengfeng; Wang, Benjiang

2017-11-01

To achieve the rebalance of flow distributions of double-sided impellers, a method of improving the radius of rear impeller is presented in this paper. It is found that the flow distributions of front and rear impeller can be adjusted effectively by increasing the radius of rear impeller, thus improves the balance of flow distributions of front and rear impeller. Meanwhile, the working conversion mode process of double-sided centrifugal compressor is also changed. Further analysis shows that the flowrates of blade channels in front impeller are mainly influenced by the circumferential distributions of static pressure in the volute. But the flowrates of rear impeller blade channels are influenced by the outlet flow field of bent duct besides the effects of static pressure distributions in the volute. In the airflow interaction area downstream, the flowrate of blade channel is obviously smaller. By increasing the radius of rear impeller, the work capacity of rear impeller is enhanced, the working mode conversion process from parallel working mode of double-sided impeller to the single impeller working mode is delayed, and the stable working range of double-sided compressor is broadened.

6. DOUBLE METAL DOORS ON WEST SIDE WITH CABLES ENTERING ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

6. DOUBLE METAL DOORS ON WEST SIDE WITH CABLES ENTERING GROUND AT NORTH END OF BUILDING. - Chollas Heights Naval Radio Transmitting Facility, Helix House, 6410 Zero Road, San Diego, San Diego County, CA

Double lung point in an 18-month-old child: a case report and literature review

PubMed Central

2015-01-01

Objective Double lung point is a rare sign of pneumothorax in clinical practice. In this report I presented an 18-month-old child who presented with bilateral pneumothorax. Data synthesis and case presentation Ultrasonography examination revealed conventional lung point sign on the right and double lung point on the left side. Thoracentesis was attempted and closed thoracic drainage was performed on the right side, but no gas was drawn on the left side. Clinical implication of double lung point sign found in chest ultrasonography is that the size of pneumothorax is limited and conservative treatment is enough. Conclusions To the best of our knowledge, this is the first case of double lung point identified with ultrasonography in child. The strength of the case is that the double lung point sign is supported by computed tomography (CT). Furthermore, we propose that the presence of double lung point indicates limited pneumothorax and conservative management may well be attempted. PMID:25922750

Observation of a stationary, current-free double layer in a plasma

NASA Technical Reports Server (NTRS)

Hairapetian, G.; Stenzel, R. L.

1990-01-01

A stationary, current-free, potential double layer is formed in a two-electron-population plasma due to self-consistent separation of the two electron species. The position and amplitude of the double layer are controlled by the relative densities of the two electron populations. The steady-state double layer traps the colder electrons on the high potential side, and generates a neutralized, monoenergetic ion beam on the low potential side. The field-aligned double layer is annihilated when an electron current is drawn through the plasma.

Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching

NASA Astrophysics Data System (ADS)

Omiya, Takuma; Tanaka, Akira; Shimomura, Masaru

2012-07-01

The structure of porous silicon carbide membranes that peeled off spontaneously during electrochemical etching was studied. They were fabricated from n-type 6H SiC(0001) wafers by a double-step electrochemical etching process in a hydrofluoric electrolyte. Nanoporous membranes were obtained after double-step etching with current densities of 10-20 and 60-100 mA/cm2 in the first and second steps, respectively. Microporous membranes were also fabricated after double-step etching with current densities of 100 and 200 mA/cm2. It was found that the pore diameter is influenced by the etching current in step 1, and that a higher current is required in step 2 when the current in step 1 is increased. During the etching processes in steps 1 and 2, vertical nanopore and lateral crack formations proceed, respectively. The influx pathway of hydrofluoric solution, expansion of generated gases, and transfer limitation of positive holes to the pore surface are the key factors in the peeling-off mechanism of the membrane.

Recent progress in high-output-voltage silicon solar cells

NASA Technical Reports Server (NTRS)

Muelenberg, A.; Arndt, R. A.; Allison, J. F.; Weizer, V.

1980-01-01

The status of the technology associated with the development of high output voltage silicon solar cells is reported. The energy conversion efficiency of a double diffusion process is compared to that of a single diffusion process. The efficiency of a 0.1 ohm/cm solar cell is characterized both before and after covering.

Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

PubMed

Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

2008-11-01

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

A stable silicon(0) compound with a Si=Si double bond.

PubMed

Wang, Yuzhong; Xie, Yaoming; Wei, Pingrong; King, R Bruce; Schaefer, Henry F; von R Schleyer, Paul; Robinson, Gregory H

2008-08-22

Dative, or nonoxidative, ligand coordination is common in transition metal complexes; however, this bonding motif is rare in compounds of main group elements in the formal oxidation state of zero. Here, we report that the potassium graphite reduction of the neutral hypervalent silicon-carbene complex L:SiCl4 {where L: is:C[N(2,6-Pri2-C6H3)CH]2 and Pri is isopropyl} produces L:(Cl)Si-Si(Cl):L, a carbene-stabilized bis-silylene, and L:Si=Si:L, a carbene-stabilized diatomic silicon molecule with the Si atoms in the formal oxidation state of zero. The Si-Si bond distance of 2.2294 +/- 0.0011 (standard deviation) angstroms in L:Si=Si:L is consistent with a Si=Si double bond. Complementary computational studies confirm the nature of the bonding in L:(Cl)Si-Si(Cl):L and L:Si=Si:L.

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

PubMed

Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

2017-04-19

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

Silicon MEMS bistable electromagnetic vibration energy harvester using double-layer micro-coils

NASA Astrophysics Data System (ADS)

Podder, P.; Constantinou, P.; Mallick, D.; Roy, S.

2015-12-01

This work reports the development of a MEMS bistable electromagnetic vibrational energy harvester (EMVEH) consisting of a silicon-on-insulator (SOI) spiral spring, double layer micro-coils and miniaturized NdFeB magnets. Furthermore, with respect to the spiral silicon spring based VEH, four different square micro-coil topologies with different copper track width and number of turns have been investigated to determine the optimal coil dimensions. The micro-generator with the optimal micro-coil generated 0.68 micro-watt load power over an optimum resistive load at 0.1g acceleration, leading to normalized power density of 3.5 kg.s/m3. At higher accelerations the load power increased, and the vibrating magnet collides with the planar micro-coil producing wider bandwidth. Simulation results show that a substantially wider bandwidth could be achieved in the same device by introducing bistable nonlinearity through a repulsive configuration between the moving and fixed permanent magnets.

Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode

NASA Astrophysics Data System (ADS)

Ariyoshi, Tetsuya; Takane, Yuta; Iwasa, Jumpei; Sakamoto, Kenji; Baba, Akiyoshi; Arima, Yutaka

2018-04-01

In this paper, we report a direct-conversion-type X-ray sensor composed of trench-structured silicon photodiodes, which achieves a high X-ray-to-current conversion efficiency under side X-ray irradiation. The silicon X-ray sensor with a length of 22.6 mm and a trench depth of 300 µm was fabricated using a single-poly single-metal 0.35 µm process. X-rays with a tube voltage of 80 kV were irradiated along the trench photodiode from the side of the test chip. The theoretical limit of X-ray-to-current conversion efficiency of 83.8% was achieved at a low reverse bias voltage of 25 V. The X-ray-to-electrical signal conversion efficiency of conventional indirect-conversion-type X-ray sensors is about 10%. Therefore, the developed sensor has a conversion efficiency that is about eight times higher than that of conventional sensors. It is expected that the developed X-ray sensor will be able to markedly lower the radiation dose required for X-ray diagnoses.

Flat-top passband filter based on parallel-coupled double microring resonators in silicon

NASA Astrophysics Data System (ADS)

Huang, Qingzhong; Xiao, Xi; Li, Yuntao; Li, Zhiyong; Yu, Yude; Yu, Jinzhong

2009-08-01

Optical filters with box-like response were designed and realized based on parallel-coupled double microrings in silicon-on-insulator. The properties of this design are simulated, considering the impact of the center-to-center distance of two rings, and coupling efficiency. Flat-top passband in the drop channel of the fabricated device was demonstrated with a 1dB bandwidth of 0.82nm, a 1dB/10dB bandwidth ratio of 0.51, an out of band rejection ratio of 14.6dB, as well as a free spectrum range of 13.6nm.

A pH sensor with a double-gate silicon nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Kim, Jee-Yeon; Seol, Myeong-Lok; Baek, David J.; Guo, Zheng; Kim, Chang-Hoon; Choi, Sung-Jin; Choi, Yang-Kyu

2013-02-01

A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness.

Elemental analyses of hypervelocity microparticle impact sites on Interplanetary Dust Experiment sensor surfaces

NASA Technical Reports Server (NTRS)

Simon, Charles G.; Hunter, J. L.; Griffis, D. P.; Misra, V.; Ricks, D. A.; Wortman, Jim J.; Brownlee, D. E.

1993-01-01

The Interplanetary Dust Experiment (IDE) had over 450 electrically active ultra-high purity metal-oxide-silicon impact detectors located on the six primary sides of the Long Duration Exposure Facility (LDEF). Hypervelocity microparticles (approximately 0.2 to approximately 100 micron diameter) that struck the active sensors with enough energy to break down the 0.4 or 1.0 micron thick SIO2 insulator layer separating the silicon base (the negative electrode), and the 1000 A thick surface layer of aluminum (the positive electrode) caused electrical discharges that were recorded for the first year of orbit. The high purity Al-SiO2-Si substrates allowed detection of trace (ppm) amounts of hypervelocity impactor residues. After sputtering through a layer of surface contamination, secondary ion mass spectrometry (SIMS) was used to create two-dimensional elemental ion intensity maps of microparticle impact sites on the IDE sensors. The element intensities in the central craters of the impacts were corrected for relative ion yields and instrumental conditions and then normalized to silicon. The results were used to classify the particles' origins as 'manmade,' 'natural,' or 'indeterminate.' The last classification resulted from the presence of too little impactor residue, analytical interference from high background contamination, the lack of information on silicon and aluminum residues, or a combination of these circumstances. Several analytical 'blank' discharges were induced on flight sensors by pressing down on the sensor surface with a pure silicon shard. Analyses of these blank discharges showed that the discharge energy blasts away the layer of surface contamination. Only Si and Al were detected inside the discharge zones, including the central craters of these features. Thus far a total of 79 randomly selected microparticle impact sites from the six primary sides of the LDEF have been analyzed: 36 from tray C-9 (Leading (ram), or East, side), 18 from tray C-3 (Trailing (wake), or West, side), 12 from tray B-12 (North side), 4 from tray D-6 (South side), 3 from tray H-11 (Space end), and 6 from tray G-10 (Earth end). Residue from manmade debris was identified in craters on all trays. (Aluminum oxide particle residues were not detectable on the Al/Si substrates.) These results were consistent with the IDE impact record which showed highly variable long term microparticle impact flux rates on the West, Space and Earth sides of the LDEF which could not be ascribed to astronomical variability of micrometeorite density. The IDE record also showed episodic bursts of microparticle impacts on the East, North, and South sides of the satellite, denoting passage through orbital debris clouds or rings.

Elemental Analyses of Hypervelocity Microparticle Impact Sites on Interplanetary Dust Experiment Sensor Surfaces

NASA Technical Reports Server (NTRS)

Simon, C. G.; Hunter, J. L.; Griffis, D. P.; Misra, V.; Ricks, D. A.; Wortman, J. J.; Brownlee, D. E.

1992-01-01

The Interplanetary Dust Experiment (IDE) had over 450 electrically active ultra-high purity metal-oxide-silicon impact detectors located on the six primary sides of the Long Duration Exposure Facility (LDEF). Hypervelocity microparticles (approximately 0.2 to approximately 100 micron diameter) that struck the active sensors with enough energy to breakdown the 0.4 or 1.0 micron thick SiO2 insulator layer separating the silicon base (the negative electrode), and the 1000 A thick surface layer of aluminum (the positive electrode) caused electrical discharges that were recorded for the first year of orbit. The high purity Al-SiO2-Si substrates allowed detection of trace (ppm) amounts of hypervelocity impactor residues. After sputtering through a layer of surface contamination, secondary ion mass spectrometry (SIMS) was used to create two-dimensional elemental ion intensity maps of microparticle sites on the IDE sensors. The element intensities in the central craters of the impacts were corrected for relative ion yields and instrumental conditions and then normalized to silicon. The results classification resulted from the particles' origins as 'manmade', 'natural', or 'indeterminate'. The last classification resulted from the presence of too little impactor residue, analytical interference from high background contamination, the lack of information on silicon and aluminum residues, or a combination of these circumstances. Several analytical 'blank' discharges were induced on flight sensors by pressing down on the sensor surface with a pure silicon shard. Analyses of these blank discharges showed that the discharge energy blasts away the layer of surface contamination. Only Si and Al were detected inside the discharge zones, including the central craters, of these features. Thus far, a total of 79 randomly selected microparticle impact sites from the six primary sides of the LDEF were analyzed: 36 from tray C-9 (Leading (ram), or east, side), 18 from tray C-3 (Trailing (wake), or west, side), 12 from tray B-12 (north side), 4 from tray D-6 (south side), 3 from tray H-11 (space end), and 6 from tray G-10 (earth end). Residue from manmade debris was identified in craters on all trays (aluminum oxide particle residues were not detectable on the Al/Si substrates). These results were consistent with the IDE impact record which showed highly variable long term microparticle impact flux rates on the west, space, and Earth sides of the LDEF which could not be ascribed to astronomical variability of micrometeorite density. The IDE record also showed episodic bursts of microparticle impacts on the east, north, and south sides of the satellite, denoting passage through orbital debris clouds or rings.

Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

DOE PAGES

Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; ...

2015-10-26

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

MEMS vibrating-beam accelerometer with piezoelectric drive

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strehlow, John; MacGugan, Doug

A high-temperature drive component for a double-ended tuning fork (DETF). The drive component attaches to a surface of at least one of the tines. The drive component includes at least one piezoelectric trace sandwiched at least partially between two electrical traces. At least one of the tines includes a doped silicon base with drive component located thereon. One of the electrical traces is electrically connected to the doped silicon base and the other is electrically isolated from the doped silicon base.

Fabrication of flexible and vertical silicon nanowire electronics.

PubMed

Weisse, Jeffrey M; Lee, Chi Hwan; Kim, Dong Rip; Zheng, Xiaolin

2012-06-13

Vertical silicon nanowire (SiNW) array devices directly connected on both sides to metallic contacts were fabricated on various non-Si-based substrates (e.g., glass, plastics, and metal foils) in order to fully exploit the nanomaterial properties for final applications. The devices were realized with uniform length Ag-assisted electroless etched SiNW arrays that were detached from their fabrication substrate, typically Si wafers, reattached to arbitrary substrates, and formed with metallic contacts on both sides of the NW array. Electrical characterization of the SiNW array devices exhibits good current-voltage characteristics consistent with the SiNW morphology.

13. OBSERVATION HALL ALONG WEST SIDE. DOUBLE DOORS LEAD TO ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

13. OBSERVATION HALL ALONG WEST SIDE. DOUBLE DOORS LEAD TO MAIN ROOM. Looking north. - Edwards Air Force Base, Air Force Rocket Propulsion Laboratory, Instrumentation & Control Building, Test Area 1-115, northwest end of Saturn Boulevard, Boron, Kern County, CA

Double sided circuit board and a method for its manufacture

DOEpatents

Lindenmeyer, Carl W.

1989-01-01

Conductance between the sides of a large double sided printed circuit board is provided using a method which eliminates the need for chemical immersion or photographic exposure of the entire large board. A plurality of through-holes are drilled or punched in a substratum according to the desired pattern, conductive laminae are made to adhere to both sides of the substratum covering the holes and the laminae are pressed together and permanently joined within the holes, providing conductive paths.

Double sided circuit board and a method for its manufacture

DOEpatents

Lindenmeyer, C.W.

1988-04-14

Conductance between the sides of a large double sided printed circuit board is provided using a method which eliminates the need for chemical immersion or photographic exposure of the entire large board. A plurality of through-holes are drilled or punched in a substratum according to the desired pattern, conductive laminae are made to adhere to both sides of the substratum covering the holes and the laminae are pressed together and permanently joined within the holes, providing conductive paths. 4 figs.

Double sided circuit board and a method for its manufacture

DOEpatents

Lindenmeyer, Carl W.

1989-07-04

Conductance between the sides of a large double sided printed circuit board is provided using a method which eliminates the need for chemical immersion or photographic exposure of the entire large board. A plurality of through-holes are drilled or punched in a substratum according to the desired pattern, conductive laminae are made to adhere to both sides of the substratum covering the holes and the laminae are pressed together and permanently joined within the holes, providing conductive paths.

Progress in MOSFET double-layer metalization

NASA Technical Reports Server (NTRS)

Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

1980-01-01

Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

Facile preparation of magnetic graphene double-sided mesoporous composites for the selective enrichment and analysis of endogenous peptides.

PubMed

Yin, Peng; Sun, Nianrong; Deng, Chunhui; Li, Yan; Zhang, Xiangmin; Yang, Pengyuan

2013-08-01

In this work, magnetic graphene double-sided mesoporous nanocomposites (mag-graphene@mSiO₂) were synthesized by coating a layer of mesoporous silica materials on each side of magnetic grapheme. The surfactant (CTAB) mediated sol-gel coating was performed using tetraethyl orthosilicate as the silica source. The as-made magnetic graphene double-sided mesoporous silica composites were treated with high-temperature calcination to remove the hydroxyl on the surface. The novel double-sided materials possess high surface area (167.8 cm²/g) and large pore volume (0.2 cm³/g). The highly open pore structure presents uniform pore size (3.2 nm) and structural stability. The hydrophobic interior pore walls could ensure an efficient adsorption of target molecules through hydrophobic-hydrophobic interaction. At the same time, the magnetic Fe₃O₄ particles on both sides of the materials could simplify the process of enrichment, which plays an important role in the treatment of complex biological samples. The magnetic graphene double-sided nanocomposites were successfully applied to size-selective and specific enrichment of peptides in standard peptide mixtures, protein digest solutions, and human urine samples. Finally, the novel material was applied to selective enrichment of endogenous peptides in mouse brain tissue. The enriched endogenous peptides were then analyzed by LC-MS/MS, and 409 endogenous peptides were detected and identified. The results demonstrate that the as-made mag-graphene@mSiO₂ have powerful potential for peptidome research. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Limits on silicon nanoelectronics for terascale integration.

PubMed

Meindl, J D; Chen, Q; Davis, J A

2001-09-14

Throughout the past four decades, silicon semiconductor technology has advanced at exponential rates in both performance and productivity. Concerns have been raised, however, that the limits of silicon technology may soon be reached. Analysis of fundamental, material, device, circuit, and system limits reveals that silicon technology has an enormous remaining potential to achieve terascale integration (TSI) of more than 1 trillion transistors per chip. Such massive-scale integration is feasible assuming the development and economical mass production of double-gate metal-oxide-semiconductor field effect transistors with gate oxide thickness of about 1 nanometer, silicon channel thickness of about 3 nanometers, and channel length of about 10 nanometers. The development of interconnecting wires for these transistors presents a major challenge to the achievement of nanoelectronics for TSI.

Detection of Ammonia-Oxidizing Bacteria (AOB) Using a Porous Silicon Optical Biosensor Based on a Multilayered Double Bragg Mirror Structure.

PubMed

Zhang, Hongyan; Lv, Jie; Jia, Zhenhong

2018-01-01

We successfully demonstrate a porous silicon (PS) double Bragg mirror by electrochemical etching at room temperature as a deoxyribonucleic acid (DNA) label-free biosensor for detecting ammonia-oxidizing bacteria (AOB). Compared to various other one-dimension photonic crystal configurations of PS, the double Bragg mirror structure is quite easy to prepare and exhibits interesting optical properties. The width of high reflectivity stop band of the PS double Bragg mirror is about 761 nm with a sharp and deep resonance peak at 1328 nm in the reflectance spectrum, which gives a high sensitivity and distinguishability for sensing performance. The detection sensitivity of such a double Bragg mirror structure is illustrated through the investigation of AOB DNA hybridization in the PS pores. The redshifts of the reflectance spectra show a good linear relationship with both complete complementary and partial complementary DNA. The lowest detection limit for complete complementary DNA is 27.1 nM and the detection limit of the biosensor for partial complementary DNA is 35.0 nM, which provides the feasibility and effectiveness for the detection of AOB in a real environment. The PS double Bragg mirror structure is attractive for widespread biosensing applications and provides great potential for the development of optical applications.

Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress

NASA Astrophysics Data System (ADS)

Lin, Jyh‑Ling; Lin, Ming‑Jang; Lin, Li‑Jheng

2006-04-01

The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage (\\mathit{BV}) and reduce specific on-resistance (Ron,sp). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the \\mathit{BV} and Ron,sp of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

Improved Starting Materials for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Revealing a double-inversion mechanism for the F⁻+CH₃Cl SN2 reaction.

PubMed

Szabó, István; Czakó, Gábor

2015-01-19

Stereo-specific reaction mechanisms play a fundamental role in chemistry. The back-side attack inversion and front-side attack retention pathways of the bimolecular nucleophilic substitution (SN2) reactions are the textbook examples for stereo-specific chemical processes. Here, we report an accurate global analytic potential energy surface (PES) for the F(-)+CH₃Cl SN2 reaction, which describes both the back-side and front-side attack substitution pathways as well as the proton-abstraction channel. Moreover, reaction dynamics simulations on this surface reveal a novel double-inversion mechanism, in which an abstraction-induced inversion via a FH···CH₂Cl(-) transition state is followed by a second inversion via the usual [F···CH₃···Cl](-) saddle point, thereby opening a lower energy reaction path for retention than the front-side attack. Quasi-classical trajectory computations for the F(-)+CH₃Cl(ν1=0, 1) reactions show that the front-side attack is a fast direct, whereas the double inversion is a slow indirect process.

Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

NASA Astrophysics Data System (ADS)

Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

2016-11-01

We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

PubMed

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Double emulsions based on silicone-fluorocarbon-water and their skin penetration.

PubMed

Mahrhauser, Denise-Silvia; Fischer, Claudia; Valenta, Claudia

2016-02-10

Double emulsions have significant potential in pharmacy and cosmetics due to the feasibility of combining incompatible substances in one product and the protection of sensitive compounds by incorporating them into their innermost phase. However, a major drawback of double emulsions is their thermodynamic instability and their strong tendency to coalesce. In the present study, the physicochemical stability, the skin permeation and the skin penetration potential of modified semi-solid double emulsions was investigated. The double emulsions were prepared of the cosmetically applied perfluoropolyethers Fomblin HC/04 or Fomblin HC-OH, silicone, carbomer and water. Measurement of the droplet size and examination of the microscopic images confirmed their physicochemical stability over the observation period of eight weeks. Franz-type diffusion cell experiments revealed no increase in curcumin permeation due to the employed perfluoropolyethers compared to the respective control formulations. The formulations used as control were O/W macroemulsions with or without a Polysorbate 80/Sorbitane monooleate 80 surfactant combination. Likewise, tape stripping studies showed no penetration enhancing effect of the employed perfluoropolyethers which is desirable as both perfluoropolyethers are commonly applied components in human personal-care products. Copyright © 2015 Elsevier B.V. All rights reserved.

Efficient optical analysis of surface texture combinations for silicon solar cells

NASA Astrophysics Data System (ADS)

Tucher, Nico; Eisenlohr, Johannes; Kiefel, Peter; Gebrewold, Habtamu; Höhn, Oliver; Hauser, Hubert; Müller, Claas; Goldschmidt, Jan Christoph; Bläsi, Benedikt

2016-04-01

Surface textures can significantly improve anti-reflective and light trapping properties of silicon solar cells. Combining standard pyramidal front side textures with scattering or diffractive rear side textures has the potential to further increase the light path length inside the silicon and thereby increase the solar cell efficiency. In this work we introduce the OPTOS (Optical Properties of Textured Optical Sheets) simulation formalism and apply it to the modelling of silicon solar cells with different surface textures at front and rear side. OPTOS is a matrix-based method that allows for the computationally-efficient calculation of non-coherent light propagation within textured solar cells, featuring multiple textures that may operate in different optical regimes. After calculating redistribution matrices for each individual surface texture with the most appropriate technique, optical properties like angle dependent reflectance, transmittance or absorptance can be determined via matrix multiplications. Using OPTOS, we demonstrate for example that the integration of a diffractive grating at the rear side of solar cells with random pyramids at the front results in an absorptance gain that corresponds to a photocurrent density enhancement of 0.73 mA/cm2 for a 250 μm thick cell. The re-usability of matrices enables the investigation of different solar cell thicknesses within minutes. For thicknesses down to 50 μm the simulated gain increases up to 1.22 mA/cm2. The OPTOS formalism is furthermore not restricted with respect to the number of textured interfaces. By combining two or more textured sheets to effective interfaces, it is possible to optically model a complete photovoltaic module including EVA and potentially textured glass layers with one calculation tool.

Rhodium-catalyzed synthesis of silafluorene derivatives via cleavage of silicon-hydrogen and carbon-hydrogen bonds.

PubMed

Ureshino, Tomonari; Yoshida, Takuya; Kuninobu, Yoichiro; Takai, Kazuhiko

2010-10-20

The rhodium-catalyzed synthesis of silafluorenes from biphenylhydrosilanes is described. This highly efficient reaction proceeds via both Si-H and C-H bond activation, producing only H(2) as a side product. Using this method, a ladder-type bis-silicon-bridged p-terphenyl could also be synthesized.

Atomistic analysis of valley-orbit hybrid states and inter-dot tunnel rates in a Si double quantum dot

NASA Astrophysics Data System (ADS)

Ferdous, Rifat; Rahman, Rajib; Klimeck, Gerhard

2014-03-01

Silicon quantum dots are promising candidates for solid-state quantum computing due to the long spin coherence times in silicon, arising from small spin-orbit interaction and a nearly spin free host lattice. However, the conduction band valley degeneracy adds an additional degree of freedom to the electronic structure, complicating the encoding and operation of qubits. Although the valley and the orbital indices can be uniquely identified in an ideal silicon quantum dot, atomic-scale disorder mixes valley and orbital states in realistic dots. Such valley-orbit hybridization, strongly influences the inter-dot tunnel rates.Using a full-band atomistic tight-binding method, we analyze the effect of atomic-scale interface disorder in a silicon double quantum dot. Fourier transform of the tight-binding wavefunctions helps to analyze the effect of disorder on valley-orbit hybridization. We also calculate and compare inter-dot inter-valley and intra-valley tunneling, in the presence of realistic disorder, such as interface tilt, surface roughness, alloy disorder, and interface charges. The method provides a useful way to compute electronic states in realistically disordered systems without any posteriori fitting parameters.

Double side read-out technique for mitigation of radiation damage effects in PbWO 4 crystals

DOE PAGES

Lucchini, Marco Toliman; Auffray, E.; Benaglia, A.; ...

2016-04-18

Test beam results of a calorimetric module based on 3×3×22 cm 3 PbWO 4 crystals, identical to those used in the CMS ECAL Endcaps, read out by a pair of photodetectors coupled to the two opposite sides (front and rear) of each crystal are presented. Nine crystals with different level of induced absorption, from 0 to 20 m -1, have been tested using electrons in the 50–200 GeV energy range. Photomultiplier tubes have been chosen as photodetectors to allow for a precise measurement of highly damaged crystals. The information provided by this double side read-out configuration allows to correct formore » event-by-event fluctuations of the longitudinal development of electromagnetic showers. By strongly mitigating the effect of non-uniform light collection efficiency induced by radiation damage, the double side read-out technique significantly improves the energy resolution with respect to a single side read-out configuration. The non-linearity of the response arising in damaged crystals is also corrected by a double side read-out configuration and the response linearity of irradiated crystals is restored. In high radiation environments at future colliders, as it will be the case for detectors operating during the High Luminosity phase of the Large Hadron Collider, defects can be created inside the scintillator volume leading to a non-uniform response of the calorimetric cell. As a result, the double side read-out technique presented in this study provides a valuable way to improve the performance of calorimeters based on scintillators whose active volumes are characterized by high aspect ratio cells similar to those used in this study.« less

Double side read-out technique for mitigation of radiation damage effects in PbWO 4 crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lucchini, Marco Toliman; Auffray, E.; Benaglia, A.

Test beam results of a calorimetric module based on 3×3×22 cm 3 PbWO 4 crystals, identical to those used in the CMS ECAL Endcaps, read out by a pair of photodetectors coupled to the two opposite sides (front and rear) of each crystal are presented. Nine crystals with different level of induced absorption, from 0 to 20 m -1, have been tested using electrons in the 50–200 GeV energy range. Photomultiplier tubes have been chosen as photodetectors to allow for a precise measurement of highly damaged crystals. The information provided by this double side read-out configuration allows to correct formore » event-by-event fluctuations of the longitudinal development of electromagnetic showers. By strongly mitigating the effect of non-uniform light collection efficiency induced by radiation damage, the double side read-out technique significantly improves the energy resolution with respect to a single side read-out configuration. The non-linearity of the response arising in damaged crystals is also corrected by a double side read-out configuration and the response linearity of irradiated crystals is restored. In high radiation environments at future colliders, as it will be the case for detectors operating during the High Luminosity phase of the Large Hadron Collider, defects can be created inside the scintillator volume leading to a non-uniform response of the calorimetric cell. As a result, the double side read-out technique presented in this study provides a valuable way to improve the performance of calorimeters based on scintillators whose active volumes are characterized by high aspect ratio cells similar to those used in this study.« less

GaN membrane MSM ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) <111> oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Plasmonic layers based on Au-nanoparticle-doped TiO2 for optoelectronics: structural and optical properties.

PubMed

Pedrueza, E; Sancho-Parramon, J; Bosch, S; Valdés, J L; Martinez-Pastor, J P

2013-02-15

The anti-reflective effect of dielectric coatings used in silicon solar cells has traditionally been the subject of intensive studies and practical applications. In recent years the interest has permanently grown in plasmonic layers based on metal nanoparticles, which are shown to increase light trapping in the underlying silicon. In the present work we have combined these two concepts by means of in situ synthesis of Au nanoparticles in a dielectric matrix (TiO2), which is commonly used as an anti-reflective coating in silicon solar cells, and added the third element: a 10-20% porosity in the matrix. The porosity is formed by means of a controllable wet etching by low concentration HF. As a consequence, the experimentally measured reflectance of silicon coated by such a plasmonic layer decreases to practically zero in a broad wavelength region around the localized surface plasmon resonance. Furthermore, we demonstrate that extinction and reflectance spectra of silicon coated by the plasmonic films can be successfully accounted for by means of Fresnel formulae, in which a double refractive index of the metal-dielectric material is used. This double refractive index cannot be explained by effective medium theory (Maxwell-Garnett, for example) and appears when the contribution of Au nanoparticles located at the TiO2/Si interface is high enough to result in formation of interface surface plasmon modes.

A novel durable double-conductive core-shell structure applying to the synthesis of silicon anode for lithium ion batteries

NASA Astrophysics Data System (ADS)

Xing, Yan; Shen, Tong; Guo, Ting; Wang, Xiuli; Xia, Xinhui; Gu, Changdong; Tu, Jiangping

2018-04-01

Si/C composites are currently the most commercially viable next-generation lithium-ion battery anode materials due to their high specific capacity. However, there are still many obstacles need to be overcome such as short cycle life and poor conductivity. In this work, we design and successfully synthesis an excellent durable double-conductive core-shell structure p-Si-Ag/C composites. Interestingly, this well-designed structure offers remarkable conductivity (both internal and external) due to the introduction of silver particles and carbon layer. The carbon layer acts as a protective layer to maintain the integrity of the structure as well as avoids the direct contact of silicon with electrolyte. As a result, the durable double-conductive core-shell structure p-Si-Ag/C composites exhibit outstanding cycling stability of roughly 1000 mAh g-1 after 200 cycles at a current density of 0.2 A g-1 and retain 765 mAh g-1 even at a high current density of 2 A g-1, indicating a great improvement in electrochemical performance compared with traditional silicon electrode. Our research results provide a novel pathway for production of high-performance Si-based anodes to extending the cycle life and specific capacity of commercial lithium ion batteries.

Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

PubMed

Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

2017-12-13

Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

The High Energy Particle Detector on Board of the China Seismo-Electromagnetic Satellite

NASA Astrophysics Data System (ADS)

Sparvoli, Roberta; Palma, Francesco; Panico, Beatrice; Sotgiu, Alessandro; Vitale, Vincenzo

2016-08-01

The study of the Van Allen belts temporal stability is among the main objectives of the China Seismo- Electromagnetic Satellite (CSES) space mission, as well as the study of other electromagnetic disturbances with possible seismic origin. In parallel to this, the CSES mission will address issues of heliospheric and magnetospheric physics, by measuring the cosmic radiation around the Earth.The CSES satellite, developed by a Chinese-Italian collaboration, will be launched in the first half of 2017 and inserted into a circular Sun-synchronous orbit with 98° inclination and 500 km altitude. The expected lifetime is 5 years. CSES hosts several instruments on board: 2 magnetometers, an electric field detector, a plasma analyser, a Langmuir probe and a High-Energy Particle Detector (HEPD). The HEPD detector, responsibility of the Italian side of the CSES collaboration, will measure electrons (3 - 100 MeV) and protons (30 - 300 MeV) along CSES orbit. It consists of a segmented layer of plastic scintillators for the trigger and a calorimeter constituted by a tower of plastic scintillator counters and a LYSO plane. The direction of the incident particle is provided by two planes of double-side silicon micro-strip detectors placed in front of the trigger. Topic of this talk is the technical description of the HEPD and its main characteristics.

Polarization of gold in nanopores leads to ion current rectification

DOE PAGES

Yang, Crystal; Hinkle, Preston; Menestrina, Justin; ...

2016-10-03

Biomimetic nanopores with rectifying properties are relevant components of ionic switches, ionic circuits, and biological sensors. Rectification indicates that currents for voltages of one polarity are higher than currents for voltages of the opposite polarity. Ion current rectification requires the presence of surface charges on the pore walls, achieved either by the attachment of charged groups or in multielectrode systems by applying voltage to integrated gate electrodes. Here we present a simpler concept for introducing surface charges via polarization of a thin layer of Au present at one entrance of a silicon nitride nanopore. In an electric field applied bymore » two electrodes placed in bulk solution on both sides of the membrane, the Au layer polarizes such that excess positive charge locally concentrates at one end and negative charge concentrates at the other end. Consequently, a junction is formed between zones with enhanced anion and cation concentrations in the solution adjacent to the Au layer. This bipolar double layer together with enhanced cation concentration in a negatively charged silicon nitride nanopore leads to voltage-controlled surface-charge patterns and ion current rectification. The experimental findings are supported by numerical modeling that confirm modulation of ionic concentrations by the Au layer and ion current rectification even in low-aspect ratio nanopores. Lastly, our findings enable a new strategy for creating ionic circuits with diodes and transistors.« less

Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsam (Inventor); Manohara, Harish (Inventor); Mobasser, Sohrab (Inventor); Lee, Choonsup (Inventor)

2011-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Anti- reflective device having an anti-reflection surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsman (Inventor); Mooasser, Sohrab (Inventor); Manohara, Harish (Inventor); Lee, Choonsup (Inventor); Bae, Kungsam (Inventor)

2009-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Dip-coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Gutter, C. D.; Schuldt, S. B.

1977-01-01

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The past quarter demonstrated significant progress in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L sub n from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which we believe to be due to an unidentified source of impurities.

Heat Transfer in the LCCM Thermal Reserve Battery

DTIC Science & Technology

2009-09-01

and Molded Sheet 3M Corporation, Elkhart IN 46516 Microtherm Sheet Microtherm Inc., Alcoa TN 37701 AR5401 Flexible Blanket Aspen Aerogels, Inc...heated Microtherm side wall and axial thermal insulation 90.9 GPS9I 04/27/07 All batteries after GPS9H used six silicone rubber gaskets to form...pressure before ignition. Thin Microtherm side wrap next to cell stack. No pre- compression of any side wall insulation or side wall heat paper (– 40

Strong coupling of a single electron in silicon to a microwave photon

NASA Astrophysics Data System (ADS)

Mi, X.; Cady, J. V.; Zajac, D. M.; Deelman, P. W.; Petta, J. R.

2017-01-01

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

Effect of oxygen plasma on nanomechanical silicon nitride resonators

NASA Astrophysics Data System (ADS)

Luhmann, Niklas; Jachimowicz, Artur; Schalko, Johannes; Sadeghi, Pedram; Sauer, Markus; Foelske-Schmitz, Annette; Schmid, Silvan

2017-08-01

Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter, we study the influence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma for only a few minutes oxidizes the silicon nitride surface, creating several nanometer thick silicon dioxide layers with a compressive stress of 1.30(16) GPa. Such oxide layers can cause a reduction in the effective tensile stress of a 50 nm thick stoichiometric silicon nitride membrane by almost 50%. Additionally, intrinsic damping linearly increases with the silicon dioxide film thickness. An oxide layer of 1.5 nm grown in just 10 s in a 50 W oxygen plasma almost doubled the intrinsic damping. The oxide surface layer can be efficiently removed in buffered hydrofluoric acid.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

2000-01-01

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yang; Chen, Xiaolong; Ye, Weiguang

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed,more » possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.« less

Reconfigurable Cellular Photonic Crystal Arrays (RCPA)

DTIC Science & Technology

2013-03-01

signal processing based on reconfigurable integrated optics devices. This technology has the potential to revolutionize the design circle of optical...Accomplishments III.A. Design and fabrication of an accumulation-mode modulator Figure 1(a) shows the schematic of a compact resonator on the double-Si... integration of silicon nitride on silicon-on-insulator platform to enhance the arsenal of photonic circuit designers . The coherent integration of

Memory device using movement of protons

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

1998-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

2000-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Stability of hydrogenated graphene: a first-principles study

DOE PAGES

Yi, Ding; Yang, Liu; Xie, Shijie; ...

2015-02-10

In order to explain the disagreement between present theoretical and experimental investigations on the stability of hydrogenated graphene, we have systematically studied hydrogenated graphene with different configurations from the consideration of single-side and double-side adsorption using first-principles calculations. Both binding energy and formation energy are calculated to characterize the stability of the system. It is found that single-side hydrogenated graphene is always unstable. However, for double-side hydrogenation, some configurations are stable due to the increased carbon–carbon sp 3 hybridization compared to single-side hydrogenation. Furthermore, it is found that the system is energetically favorable when an equal number of hydrogen atomsmore » are adsorbed on each side of the graphene.« less

Design considerations for multielectron double quantum dot qubits in silicon

NASA Astrophysics Data System (ADS)

Nielsen, Erik; Barnes, Edwin; Kestner, Jason

2014-03-01

Solid state double quantum dot (DQD) spin qubits can be created by confining two electrons to a DQD potential. We present results showing the viability and potential advantages of creating a DQD spin qubit with greater than two electrons, and which suggest that silicon devices which could realize these advantages are experimentally possible. Our analysis of a six-electron DQD uses full configuration interaction methods and shows an isolated qubit space in regimes which 3D quantum device simulations indicate are accessible experimentally. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Investigating the Effect of Carbon Nanotube Diameter and Wall Number in Carbon Nanotube/Silicon Heterojunction Solar Cells

PubMed Central

Grace, Tom; Yu, LePing; Gibson, Christopher; Tune, Daniel; Alturaif, Huda; Al Othman, Zeid; Shapter, Joseph

2016-01-01

Suspensions of single-walled, double-walled and multi-walled carbon nanotubes (CNTs) were generated in the same solvent at similar concentrations. Films were fabricated from these suspensions and used in carbon nanotube/silicon heterojunction solar cells and their properties were compared with reference to the number of walls in the nanotube samples. It was found that single-walled nanotubes generally produced more favorable results; however, the double and multi-walled nanotube films used in this study yielded cells with higher open circuit voltages. It was also determined that post fabrication treatments applied to the nanotube films have a lesser effect on multi-walled nanotubes than on the other two types. PMID:28344309

Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.

We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

Double Y-stenting for tracheobronchial stenosis.

PubMed

Oki, Masahide; Saka, Hideo

2012-12-01

The purpose of the present study was to evaluate the feasibility, efficacy and safety of the double Y-stenting technique, by which silicone Y-stents are placed on both the main carina and another peripheral carina, for patients with tracheobronchial stenosis. Under general anaesthesia, using rigid and flexible bronchoscopes, a Dumon™ Y-stent (Novatech, La Ciotat, France) was first placed on the primary right or secondary left carina followed by another Y-stent on the main carina so as to insert the bronchial limb of the stent into the first Y-stent. Patients who underwent double Y-stent placement during 3 yrs and 1 month in a single centre were retrospectively reviewed. In the study period, 93 patients underwent silicone stent placement and 12 (13%) underwent double Y-stent placement (11 for right and one for left bronchus). A combination of Y-stents, 14 × 10 × 10 mm and 16 × 13 × 13 mm in outer diameter, were most frequently used. Dyspnoea was relieved in all patients. Six out of seven patients with supplemental oxygen before stent placement could be discharged without supplemental oxygen. Median survival after stenting was 94.5 days. One pneumothorax and one granuloma formation occurred. Double Y-stent placement for patients with tracheobronchial stenosis was technically feasible, effective and acceptably safe.

48 CFR 52.204-4 - Printed or Copied Double-Sided on Recycled Paper.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 2 2010-10-01 2010-10-01 false Printed or Copied Double-Sided on Recycled Paper. 52.204-4 Section 52.204-4 Federal Acquisition Regulations System FEDERAL... and paper products, postconsumer material means “postconsumer fiber” defined by the U.S. Environmental...

48 CFR 52.204-4 - Printed or Copied Double-Sided on Postconsumer Fiber Content Paper.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 48 Federal Acquisition Regulations System 2 2011-10-01 2011-10-01 false Printed or Copied Double-Sided on Postconsumer Fiber Content Paper. 52.204-4 Section 52.204-4 Federal Acquisition Regulations System FEDERAL ACQUISITION REGULATION (CONTINUED) CLAUSES AND FORMS SOLICITATION PROVISIONS AND CONTRACT...

β-particle energy-summing correction for β-delayed proton emission measurements

DOE PAGES

Meisel, Z.; del Santo, M.; Crawford, H. L.; ...

2016-11-14

One common approach to studying β-delayed proton emission is to measure the energy of the emitted proton and corresponding nuclear recoil in a double-sided silicon-strip detector (DSSD) after implanting the β-delayed proton-emitting (βp) nucleus. However, in order to extract the proton-decay energy, the measured energy must be corrected for the additional energy implanted in the DSSD by the β-particle emitted from the βp nucleus, an effect referred to here as β-summing. Here, we present an approach to determine an accurate correction for β-summing. Our method relies on the determination of the mean implantation depth of the βp nucleus within themore » DSSD by analyzing the shape of the total (proton + recoil + β) decay energy distribution shape. We validate this approach with other mean implantation depth measurement techniques that take advantage of energy deposition within DSSDs upstream and downstream of the implantation DSSD.« less

First Results on High-spin States in ^179Au

NASA Astrophysics Data System (ADS)

Mueller, W. F.; Bingham, C. R.; Reviol, W.; Riedinger, L. L.; Smith, B. H.; Wauters, J.; Ahmad, I.; Amro, H. A.; Blumenthal, D. J.; Carpenter, M. P.; Davids, C. N.; Fischer, S. M.; Hackman, G.; Henderson, D. J.; Janssens, R. V. F.; Khoo, T. L.; Lauritsen, T.; Lister, C. J.; Nisius, D. T.; Seweryniak, D.; Ma, W. C.

1996-05-01

High-spin states in ^179Au were studied for the first time in two experiments at the Argonne uc(atlas) facility. The ^144Sm(^40Ar,p4n)^179Au reaction at 207 MeV was used for the first experiment and ^124Te(^58Ni,p2n)^179Au at 255 MeV in the second. The setup in the first experiment consisted of the Fragment Mass Analyzer (uc(fma)) plus Parallel Plate Avalanche Counter (uc(ppac)) system and 10 Compton-suppressed Ge detectors (CSG's). From this run, several transitions from the yrast bands were established. The latter experiment utilized the uc(fma) + uc(ppac) system in conjunction with the uc(aye-ball) array of 19 Ge detectors (eight >70% efficient CSG's, nine 25% efficient CSG's, and two LEPS; one with Compton suppression) and a double sided silicon strip detector (uc(dssd).) The results from these experiments, including a level scheme, will be presented and discussed.

The readout chain for the bar PANDA MVD strip detector

NASA Astrophysics Data System (ADS)

Schnell, R.; Brinkmann, K.-Th.; Di Pietro, V.; Kleines, H.; Goerres, A.; Riccardi, A.; Rivetti, A.; Rolo, M. D.; Sohlbach, H.; Zaunick, H.-G.

2015-02-01

The bar PANDA (antiProton ANnihilation at DArmstadt) experiment will study the strong interaction in annihilation reactions between an antiproton beam and a stationary gas jet target. The detector will comprise different sub-detectors for tracking, particle identification and calorimetry. The Micro-Vertex Detector (MVD) as the innermost part of the tracking system will allow precise tracking and detection of secondary vertices. For the readout of the double-sided silicon strip sensors a custom-made ASIC is being developed, employing the Time-over-Threshold (ToT) technique for digitization and utilize time-to-digital converters (TDC) to provide a high-precision time stamp of the hit. A custom-made Module Data Concentrator ASIC (MDC) will multiplex the data of all front-ends of one sensor towards the CERN-developed GBT chip set (GigaBit Transceiver). The MicroTCA-based MVD Multiplexer Board (MMB) at the off-detector site will receive and concentrate the data from the GBT links and transfer it to FPGA-based compute nodes for global event building.

Automation of experiments at Dubna Gas-Filled Recoil Separator

NASA Astrophysics Data System (ADS)

Tsyganov, Yu. S.

2016-01-01

Approaches to solving the problems of automation of basic processes in long-term experiments in heavy ion beams of the Dubna Gas-Filled Recoil Separator (DGFRS) facility are considered. Approaches in the field of spectrometry, both of rare α decays of superheavy nuclei and those for constructing monitoring systems to provide accident-free experiment running with highly radioactive targets and recording basic parameters of experiment, are described. The specific features of Double Side Silicon Strip Detectors (DSSSDs) are considered, special attention is paid to the role of boundary effects of neighboring p-n transitions in the "active correlations" method. An example of an off-beam experiment attempting to observe Zeno effect is briefly considered. Basic examples for nuclear reactions of complete fusion at 48Ca ion beams of U-400 cyclotron (LNR, JINR) are given. A scenario of development of the "active correlations" method for the case of very high intensity beams of heavy ions at promising accelerators of LNR, JINR, is presented.

Beta decay of exotic TZ = -1, -2 nuclei: the interesting case of 56Zn

NASA Astrophysics Data System (ADS)

Orrigo, S. E. A.; Rubio, B.; Fujita, Y.; Blank, B.; Gelletly, W.; Agramunt, J.; Algora, A.; Ascher, P.; Bilgier, B.; Cáceres, L.; Cakirli, R. B.; Fujita, H.; Ganioğlu, E.; Gerbaux, M.; Giovinazzo, J.; Grévy, S.; Kamalou, O.; Kozer, H. C.; Kucuk, L.; Kurtukian-Nieto, T.; Molina, F.; Popescu, L.; Rogers, A. M.; Susoy, G.; Stodel, C.; Suzuki, T.; Tamii, A.; Thomas, J. C.

2014-03-01

The β decay properties of the Tz = -2, 56Zn isotope and other proton-rich nuclei in the fp-shell have been investigated in an experiment performed at GANIL. The ions were produced in fragmentation reactions and implanted in a double-sided silicon strip detector surrounded by Ge EXOGAM clovers. Preliminary results for 56Zn are presented .The 56Zn decay proceeds mainly by β delayed proton emission, but β delayed gamma rays were also detected. Moreover, the exotic β delayed gamma-proton decay was observed for the first time. The 56Zn half-life and the energy levels populated in the 56Cu daughter have been determined. Knowledge of the gamma de-excitation of the mirror states in 56Co and the comparison with the results of the mirror charge exchange process, the 56Fe(3He,t) reaction (where 56Fe has Tz = +2), were important in the interpretation of the 56Zn decay data. The absolute Fermi and Gamow-Teller strengths have been deduced.

Simultaneous double-rod rotation technique in posterior instrumentation surgery for correction of adolescent idiopathic scoliosis.

PubMed

Ito, Manabu; Abumi, Kuniyoshi; Kotani, Yoshihisa; Takahata, Masahiko; Sudo, Hideki; Hojo, Yoshihiro; Minami, Akio

2010-03-01

The authors present a new posterior correction technique consisting of simultaneous double-rod rotation using 2 contoured rods and polyaxial pedicle screws with or without Nesplon tapes. The purpose of this study is to introduce the basic principles and surgical procedures of this new posterior surgery for correction of adolescent idiopathic scoliosis. Through gradual rotation of the concave-side rod by 2 rod holders, the convex-side rod simultaneously rotates with the the concave-side rod. This procedure does not involve any force pushing down the spinal column around the apex. Since this procedure consists of upward pushing and lateral translation of the spinal column with simultaneous double-rod rotation maneuvers, it is simple and can obtain thoracic kyphosis as well as favorable scoliosis correction. This technique is applicable not only to a thoracic single curve but also to double major curves in cases of adolescent idiopathic scoliosis.

A Double-Sided Linear Primary Permanent Magnet Vernier Machine

PubMed Central

2015-01-01

The purpose of this paper is to present a new double-sided linear primary permanent magnet (PM) vernier (DSLPPMV) machine, which can offer high thrust force, low detent force, and improved power factor. Both PMs and windings of the proposed machine are on the short translator, while the long stator is designed as a double-sided simple iron core with salient teeth so that it is very robust to transmit high thrust force. The key of this new machine is the introduction of double stator and the elimination of translator yoke, so that the inductance and the volume of the machine can be reduced. Hence, the proposed machine offers improved power factor and thrust force density. The electromagnetic performances of the proposed machine are analyzed including flux, no-load EMF, thrust force density, and inductance. Based on using the finite element analysis, the characteristics and performances of the proposed machine are assessed. PMID:25874250

A double-sided linear primary permanent magnet vernier machine.

PubMed

Du, Yi; Zou, Chunhua; Liu, Xianxing

2015-01-01

The purpose of this paper is to present a new double-sided linear primary permanent magnet (PM) vernier (DSLPPMV) machine, which can offer high thrust force, low detent force, and improved power factor. Both PMs and windings of the proposed machine are on the short translator, while the long stator is designed as a double-sided simple iron core with salient teeth so that it is very robust to transmit high thrust force. The key of this new machine is the introduction of double stator and the elimination of translator yoke, so that the inductance and the volume of the machine can be reduced. Hence, the proposed machine offers improved power factor and thrust force density. The electromagnetic performances of the proposed machine are analyzed including flux, no-load EMF, thrust force density, and inductance. Based on using the finite element analysis, the characteristics and performances of the proposed machine are assessed.

Improved passivation effect in multicrystalline black silicon by chemical solution pre-treatment

NASA Astrophysics Data System (ADS)

Jiang, Ye; Shen, Honglie; Pu, Tian; Zheng, Chaofan

2018-04-01

Though black silicon has excellent anti-reflectance property, its passivation is one of the main technical bottlenecks due to its large specific surface area. In this paper, multicrystalline black silicon is fabricated by metal assisted chemical etching, and is rebuilt in low concentration alkali solution. Different solution pre-treatment is followed to make surface modification on black silicon before Al2O3 passivation by atomic layer deposition. HNO3 and H2SO4 + H2O2 solution pre-treatment makes the silicon surface become hydrophilic, with contact angle decrease from 117.28° to about 30°. It is demonstrated that when the pre-treatment solution is nitric acid, formed ultrathin SiO x layer between Al2O3 layer and black silicon is found to increase effective carrier lifetime to 72.64 µs, which is obviously higher than that of the unpassivated black silicon. The passivation stacks of SiO x /Al2O3 are proved to be effective double layers for nanoscaled multicrystalline silicon surface.

A quantitative comparison of resolution, scanning speed and lifetime behavior of CVD grown Single Wall Carbon Nanotubes and silicon SPM probes using spectral methods

NASA Astrophysics Data System (ADS)

Krause, O.; Bouchiat, V.; Bonnot, A. M.

2007-03-01

Due to their extreme aspect ratios and exceptional mechanical properties Carbon Nanotubes terminated silicon probes have proven to be the ''ideal'' probe for Atomic Force Microscopy. But especially for the manufacturing and use of Single Walled Carbon Nanotubes there are serious problems, which have not been solved until today. Here, Single and Double Wall Carbon Nanotubes, batch processed and used as deposited by Chemical Vapor Deposition without any postprocessing, are compared to standard and high resolution silicon probes concerning resolution, scanning speed and lifetime behavior.

Qualification test of the Ross Double Planetary Mixer

NASA Technical Reports Server (NTRS)

Lueders, Kurt F.

1993-01-01

This test report describes the qualification test of the Ross Double Planetary Mixer used to mix room temperature vulcanized (RTV) silicone (Dow Corning 90-006-2) for the redesigned solid rocket motor (RSRM) nozzle joints. Testing was completed 18 June 1993 in the M-113A Nozzle Fabrication Facility at Thiokol Corporation, Space Operations, Brigham City, Utah. The Ross mixer provides better mixing and better control on temperature and humidity, resulting in better quality RTV and a longer usable pot life. The test began on 3 May 1993 and was stopped due to operator error during the tensile strength and elongation testing. Specimens were ruined without gathering any useful data. A 'no test' was declared, the problem was remedied, and the test was re-run with MSFC approval. The test was run and all pass/fail criteria were met, most with a considerable margin. The Ross Double Planetary Mixer met all certification objectives and is recommended for immediate use for mixing RTV silicone for RSRM nozzle joints.

Computation of a spectrum from a single-beam fourier-transform infrared interferogram.

PubMed

Ben-David, Avishai; Ifarraguerri, Agustin

2002-02-20

A new high-accuracy method has been developed to transform asymmetric single-sided interferograms into spectra. We used a fraction (short, double-sided) of the recorded interferogram and applied an iterative correction to the complete recorded interferogram for the linear part of the phase induced by the various optical elements. Iterative phase correction enhanced the symmetry in the recorded interferogram. We constructed a symmetric double-sided interferogram and followed the Mertz procedure [Infrared Phys. 7,17 (1967)] but with symmetric apodization windows and with a nonlinear phase correction deduced from this double-sided interferogram. In comparing the solution spectrum with the source spectrum we applied the Rayleigh resolution criterion with a Gaussian instrument line shape. The accuracy of the solution is excellent, ranging from better than 0.1% for a blackbody spectrum to a few percent for a complicated atmospheric radiance spectrum.

Double Sided-Design of Electrodes Driving Tunable Dielectrophoretic Miniature Lens.

PubMed

Almoallem, Yousuf; Jiang, Hongrui

2017-10-01

We demonstrate the design methodology, geometrical analysis, device fabrication, and testing of a double-sided design (DSD) of tunable-focus dielectrophoretic liquid miniature lenses. This design is intended to reduce the driving voltage for tuning the lens, utilizing a double-sided electrode design that enhances the electric field magnitude. Fabricated devices were tested and measurements on a goniometer showed changes of up to 14° in the contact angle when the dielectrophoretic force was applied under 25 V rms . Correspondingly, the back focal length of the liquid lens changed from 67.1 mm to 14.4 mm when the driving voltage was increased from zero to 25 V rms . The driving voltage was significantly lower than those previously reported with similar device dimensions using single-sided electrode designs. This design allows for a range of both positive and negative menisci dependent on the volume of the lens liquid initially dispensed.

Adverse effects associated with ethanol catheter lock solutions: a systematic review.

PubMed

Mermel, Leonard A; Alang, Neha

2014-10-01

Antimicrobial lock therapy has been widely utilized internationally for the prevention and management of intravascular catheter-related bloodstream infections. One of the agents commonly utilized for lock therapy is ethanol. However, a systematic review of adverse events associated with ethanol locks has not been published. PubMed was searched to collect articles published from May 2003 through March 2014. The bibliographies of relevant articles were also reviewed. In vitro studies of the mechanical properties of catheters after ethanol immersion have revealed changes predominantly in polyurethane catheters and to a lesser extent in silicone and Carbothane catheters. An elution of polymers from polyurethane and Carbothane catheters has been observed at the ethanol concentrations used in ethanol lock therapy. Ethanol above a concentration of 28% leads to plasma protein precipitation. Ethanol locks were associated with catheter occlusion in 11 studies and independently increased the risk of thrombosis compared with heparin lock in a randomized trial. Six studies noted abnormalities in catheter integrity, including one case leading to catheter embolization. Of note, five of these studies involved silicone catheters. Ethanol lock use was associated with systemic side effects in 10 studies and possible side effects in one additional study. Four studies noted liver function test abnormalities, predominantly transaminase elevation, related to ethanol lock use. However, a prospective study did not find any difference in the risk of doubling the transaminase level above the normal range during use of ethanol locks compared with not using an ethanol lock. The use of ethanol locks has been associated with structural changes in catheters, as well as the elution of molecules from the catheter polymers. Clinical studies have revealed systemic toxicity, increased catheter occlusion and breaches in catheter integrity. © The Author 2014. Published by Oxford University Press on behalf of the British Society for Antimicrobial Chemotherapy. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com.

Silicon carbide at nanoscale: Finite single-walled to "infinite" multi-walled tubes

NASA Astrophysics Data System (ADS)

Adhikari, Kapil

A systematic ab initio study of silicon carbide (SiC) nanostructures, especially finite single-walled, infinite double- and multi-walled nanotubes and nanocones is presented. Electronic and structural properties of all these nanostructures have been calculated using hybrid density functionals (B3LYP and PBE0) as implemented in the GAUSSIAN 03/09 suite of software. The unusual dependence of band gap of silicon carbide nanotubes (SiCNT) has been explained as a direct consequence of curvature effect on the ionicity of the bonds. The study of fullerene hemisphere capped, finite SiC nanotubes indicates that the carbon-capped SiC nanotubes are energetically more preferred than silicon-capped finite or hydrogen terminated infinite nanotubes. Capping a nanotube by fullerene hemisphere reduces its band gap. SiC nanocones have also been investigated as possible cap structures of nanotubes. Electronic properties of the nanocones are found to be strongly dependent upon their tip and edge structures, with possible interesting applications in surface science. Three types of double-walled SiCNTs (n, n)@(m, m) (3 ≤ n ≤ 6 ; 7 ≤ m ≤ 12) have been studied using the finite cluster approximation. The stabilities of these nanotubes are of the same order as those of the single-walled SiC nanotubes and it should be experimentally possible to synthesize both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes and their types. A study of binding energies, Mulliken charges, density of states and HOMO-LUMO gaps has been performed for all nanotubes from (n, n)@(n+3,n+3) to (n, n)@(n+6, n+6) (n=3-6). Evolution of band gaps of the SiCNTs with increase in the number of walls has also been investigated. The nature of interaction between transition metal atoms and silicon carbide nanotubes with different curvature has also been investigated. The curvature of the nanotubes affects the nature of the interaction between the nanotubes and the transition teal atoms. Our study of functionalized SiCNTs by 3d transition metal atoms indicates that these nanostructures can have possible applications in spintronics and nano-magnetic storage.

Effects of doubling the portion size of fruit and vegetable side dishes on children's intake at a meal.

PubMed

Kral, Tanja V E; Kabay, April C; Roe, Liane S; Rolls, Barbara J

2010-03-01

Increasing the portion size of energy-dense entrées has been shown to increase children's energy intake during a meal. It remains to be investigated whether serving larger portions to children can be used to promote intake of more healthful foods, such as fruits and vegetables (F&V). The aim of the present study was to examine the effects of increasing the portion size of F&V side dishes on children's intake. Forty-three children (22 boys, 21 girls), aged 5-6 years, were served dinner once a week for 2 weeks. Each dinner consisted of pasta with tomato sauce, three F&V side dishes (broccoli, carrots, and applesauce), and milk. The portion size of the F&V was doubled between experimental conditions whereas the size of the pasta remained constant. Doubling the portion size of the side dishes resulted in a 43% increase in children's intake of the fruit side dish (P = 0.001), but did not affect children's intake of the two vegetable side dishes (P > 0.60). Further, when the portion size of F&V side dishes was doubled, children ate significantly less of the pasta (P = 0.04). The difference in meal energy intake between portion size conditions (19.5 +/- 16.3 kcal) was not significant (P = 0.24). Although more studies are needed to understand whether increases in portion size can influence vegetable intake, children did eat more in response to a large quantity of a preferred low energy-dense fruit side dish at meals. Thus variations in portion size can be used strategically to help children achieve the recommended intake of fruits.

Strong coupling of a single electron in silicon to a microwave photon.

PubMed

Mi, X; Cady, J V; Zajac, D M; Deelman, P W; Petta, J R

2017-01-13

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots. Copyright © 2017, American Association for the Advancement of Science.

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

PubMed

Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

2012-07-17

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Laser-induced periodic surface structures on zinc oxide crystals upon two-colour femtosecond double-pulse irradiation

NASA Astrophysics Data System (ADS)

Höhm, S.; Rosenfeld, A.; Krüger, J.; Bonse, J.

2017-03-01

In order to study the temporally distributed energy deposition in the formation of laser-induced periodic surface structures (LIPSS) on single-crystalline zinc oxide (ZnO), two-colour double-fs-pulse experiments were performed. Parallel or cross-polarised double-pulse sequences at 400 and 800 nm wavelength were generated by a Mach-Zehnder interferometer, exhibiting inter-pulse delays up to a few picoseconds between the sub-ablation 50-fs-pulses. Twenty two-colour double-pulse sequences were collinearly focused by a spherical mirror to the sample surface. The resulting LIPSS periods and areas were analysed by scanning electron microscopy. The delay-dependence of these LIPSS characteristics shows a dissimilar behaviour when compared to the semiconductor silicon, the dielectric fused silica, or the metal titanium. A wavelength-dependent plasmonic mechanism is proposed to explain the delay-dependence of the LIPSS on ZnO when considering multi-photon excitation processes. Our results support the involvement of nonlinear processes for temporally overlapping pulses. These experiments extend previous two-colour studies on the indirect semiconductor silicon towards the direct wide band-gap semiconductor ZnO and further manifest the relevance of the ultrafast energy deposition for LIPSS formation.

Single Side Electrolytic In-Process Dressing (ELID) Grinding with Lapping Kinematics of Silicon Carbide

NASA Astrophysics Data System (ADS)

Khoshaim, Ahmed Bakr

The demand for Silicon Carbide ceramics (SiC) has increased significantly in the last decade due to its reliable physical and chemical properties. The silicon carbide is widely used for aerospace segments in addition to many uses in the industry. Sometimes, a single side grinding is preferable than conventional grinding, for it has the ability to produce flat ceramics. However, the manufacturing cost is still high because of the high tool wear and long machining time. Part of the solution is to use electrolytic in process dressing (ELID) to reduce the processing time. The study on ELID single side grinding of ceramics has never been attempted before. The study involves four variables with three levels each. One of the variables, which is the eccentricity, is being investigated for the first time on ceramics. A full factorial design, for both the surface roughness and material removal rate, guides to calculate mathematical models that can predict future results. Three grinding wheel mesh sizes are used. An investigation of the influence of different grain size on the results can then be evaluated. The kinematics of the process was studied based on eccentricity in order to optimize the pattern of the diamond grains. The experiment is performed with the assist of the proposed specialized ELID fluid, TRIM C270E.

Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

PubMed

Kiaee, Zohreh; Joo, Seung Ki

2018-03-01

The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

Numerical study of melt flow under the influence of heater-generating magnetic field during directional solidification of silicon ingots

NASA Astrophysics Data System (ADS)

Li, Zaoyang; Qi, Xiaofang; Liu, Lijun; Zhou, Genshu

2018-02-01

The alternating current (AC) in the resistance heater for generating heating power can induce a magnetic field in the silicon melt during directional solidification (DS) of silicon ingots. We numerically study the influence of such a heater-generating magnetic field on the silicon melt flow and temperature distribution in an industrial DS process. 3D simulations are carried out to calculate the Lorentz force distribution as well as the melt flow and heat transfer in the entire DS furnace. The pattern and intensity of silicon melt flow as well as the temperature distribution are compared for cases with and without Lorentz force. The results show that the Lorentz force induced by the heater-generating magnetic field is mainly distributed near the top and side surfaces of the silicon melt. The melt flow and temperature distribution, especially those in the upper part of the silicon region, can be influenced significantly by the magnetic field.

Unified double- and single-sided homogeneous Green’s function representations

PubMed Central

van der Neut, Joost; Slob, Evert

2016-01-01

In wave theory, the homogeneous Green’s function consists of the impulse response to a point source, minus its time-reversal. It can be represented by a closed boundary integral. In many practical situations, the closed boundary integral needs to be approximated by an open boundary integral because the medium of interest is often accessible from one side only. The inherent approximations are acceptable as long as the effects of multiple scattering are negligible. However, in case of strongly inhomogeneous media, the effects of multiple scattering can be severe. We derive double- and single-sided homogeneous Green’s function representations. The single-sided representation applies to situations where the medium can be accessed from one side only. It correctly handles multiple scattering. It employs a focusing function instead of the backward propagating Green’s function in the classical (double-sided) representation. When reflection measurements are available at the accessible boundary of the medium, the focusing function can be retrieved from these measurements. Throughout the paper, we use a unified notation which applies to acoustic, quantum-mechanical, electromagnetic and elastodynamic waves. We foresee many interesting applications of the unified single-sided homogeneous Green’s function representation in holographic imaging and inverse scattering, time-reversed wave field propagation and interferometric Green’s function retrieval. PMID:27436983

Unified double- and single-sided homogeneous Green's function representations

NASA Astrophysics Data System (ADS)

Wapenaar, Kees; van der Neut, Joost; Slob, Evert

2016-06-01

In wave theory, the homogeneous Green's function consists of the impulse response to a point source, minus its time-reversal. It can be represented by a closed boundary integral. In many practical situations, the closed boundary integral needs to be approximated by an open boundary integral because the medium of interest is often accessible from one side only. The inherent approximations are acceptable as long as the effects of multiple scattering are negligible. However, in case of strongly inhomogeneous media, the effects of multiple scattering can be severe. We derive double- and single-sided homogeneous Green's function representations. The single-sided representation applies to situations where the medium can be accessed from one side only. It correctly handles multiple scattering. It employs a focusing function instead of the backward propagating Green's function in the classical (double-sided) representation. When reflection measurements are available at the accessible boundary of the medium, the focusing function can be retrieved from these measurements. Throughout the paper, we use a unified notation which applies to acoustic, quantum-mechanical, electromagnetic and elastodynamic waves. We foresee many interesting applications of the unified single-sided homogeneous Green's function representation in holographic imaging and inverse scattering, time-reversed wave field propagation and interferometric Green's function retrieval.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yu; School of Mechanical and Electrical Engineering, Wuhan Institute of Technology, Wuhan 430073; Guo, Zhiguang, E-mail: zguo@licp.cas.cn

Graphical abstract: A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces, showing a good superhydrophobicity with the contact angle of about 170°, and the sliding angle of about 0°. Meanwhile, the potential formation mechanism about it is also presented. Highlights: ► A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces. ► The obtained surfaces show good superhydrophobicity with a high contact angle and low sliding angle. ► The color of the etched substrate dark brown or black and it is so-called black silicon. -- Abstract: Silicon substrates treated by metal-assisted chemical etching have been studied formore » many years since they could be employed in a variety of electronic and optical devices such as integrated circuits, photovoltaics, sensors and detectors. However, to the best of our knowledge, the chemical etching treatment on the same silicon substrate with the assistance of two or more kinds of metals has not been reported. In this paper, we mainly focus on the etching time and finally obtain a series of superhydrophobic silicon surfaces with novel etching structures through two successive etching processes of Cu-assisted and Ag-assisted chemical etching. It is shown that large-scale homogeneous but locally irregular wire-like structures are obtained, and the superhydrophobic surfaces with low hysteresis are prepared after the modifications with low surface energy materials. It is worth noting that the final silicon substrates not only possess high static contact angle and low hysteresis angle, but also show a black color, indicating that the superhydrophobic silicon substrate has an extremely low reflectance in a certain range of wavelengths. In our future work, we will go a step further to discuss the effect of temperature, the size of Cu nanoparticles and solution concentration on the final topography and superhydrophobicity.« less

Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer

PubMed Central

2012-01-01

The aims of this work are to getter undesirable impurities from low-cost multicrystalline silicon (mc-Si) wafers and then enhance their electronic properties. We used an efficient process which consists of applying phosphorus diffusion into a sacrificial porous silicon (PS) layer in which the gettered impurities have been trapped after the heat treatment. As we have expected, after removing the phosphorus-rich PS layer, the electrical properties of the mc-Si wafers were significantly improved. The PS layers, realized on both sides of the mc-Si substrates, were formed by the stain-etching technique. The phosphorus treatment was achieved using a liquid POCl3-based source on both sides of the mc-Si wafers. The realized phosphorus/PS/Si/PS/phosphorus structures were annealed at a temperature ranging between 700°C and 950°C under a controlled O2 atmosphere, which allows phosphorus to diffuse throughout the PS layers and to getter eventual metal impurities towards the phosphorus-doped PS layer. The effect of this gettering procedure was investigated by means of internal quantum efficiency and the dark current–voltage (I-V) characteristics. The minority carrier lifetime measurements were made using a WTC-120 photoconductance lifetime tester. The serial resistance and the shunt resistance carried out from the dark I-V curves confirm this gettering-related solar cell improvement. It has been shown that the photovoltaic parameters of the gettered silicon solar cells were improved with regard to the ungettered one, which proves the beneficial effect of this gettering process on the conversion efficiency of the multicrystalline silicon solar cells. PMID:22846070

Fabrication of resistive switching memory structure using double-sided-anodized porous alumina

NASA Astrophysics Data System (ADS)

Morishita, Yoshitaka; Hosono, Takaya; Ogawa, Hiroto

2017-05-01

Double-sides of aluminum sheet were anodized; at first, one side (front-side) of aluminum sheet was anodized, and the pores were filled with nickel using electroplating technique. Next, the other side (back side) of aluminum sheet was anodized. After formation of electrodes on both sides of anodic porous alumina, the current-voltage characteristics were examined, and reversible change in the resistance between metallic and insulating states was measured during mono-polar operation. This switching behavior could be measured for the sample with the depth of backside pores of about 100 μm. The bias voltage, at which the resistance state changed into the lower-resistance state from the higher-resistance state, decreased with decreasing the depth of backside pores, and the bias voltage was about 1 V in the case of the backside pores of about 10 μm.

Mapping and analysis of microplasticity in tensile-deformed double-notched silicon crystals by computer-aided X-ray rocking curve analyzer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H.Y.; Mayo, W.E.; Weissmann, S.

A computer-aided X-ray rocking curve analyzer (CARCA) was developed to map and analyze rapidly the distribution of plastic and elastic strains in deformed single crystals. Double-notched silicon crystal, tensile deformed at 800 C, was selected as a model material. For small stresses the interaction effects of the strained plastic zones were negligible. With increased deformation interaction of microplasticity caused modifications of the characteristics of the plastic zones at the notch tips. The microplastic trajectory of the internotch zone outlined the future fracture path at an early stage of deformation. The observed decrease of micrplasticity with depth from the surface ismore » explained both from the micro and macromechanics viewpoint.« less

All-solid-state supercapacitors on silicon using graphene from silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitancemore » behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.« less

Structure assignment, electronic properties, and magnetism quenching of endohedrally doped neutral silicon clusters, Si(n)Co (n = 10-12).

PubMed

Li, Yejun; Tam, Nguyen Minh; Claes, Pieterjan; Woodham, Alex P; Lyon, Jonathan T; Ngan, Vu Thi; Nguyen, Minh Tho; Lievens, Peter; Fielicke, André; Janssens, Ewald

2014-09-18

The structures of neutral cobalt-doped silicon clusters have been assigned by a combined experimental and theoretical study. Size-selective infrared spectra of neutral Si(n)Co (n = 10-12) clusters are measured using a tunable IR-UV two-color ionization scheme. The experimental infrared spectra are compared with calculated spectra of low-energy structures predicted at the B3P86 level of theory. It is shown that the Si(n)Co (n = 10-12) clusters have endohedral caged structures, where the silicon frameworks prefer double-layered structures encapsulating the Co atom. Electronic structure analysis indicates that the clusters are stabilized by an ionic interaction between the Co dopant atom and the silicon cage due to the charge transfer from the silicon valence sp orbitals to the cobalt 3d orbitals. Strong hybridization between the Co dopant atom and the silicon host quenches the local magnetic moment on the encapsulated Co atom.

Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate

NASA Astrophysics Data System (ADS)

Mizoguchi, Seiya; Shimatani, Naoki; Kobayashi, Mizuki; Makino, Takaomi; Yamaoka, Yu; Kodera, Tetsuo

2018-04-01

We study hole transport properties in physically defined p-type silicon quantum dots (QDs) on a heavily doped silicon-on-insulator (SOI) substrate. We observe Coulomb diamonds using single QDs and estimate the charging energy as ∼1.6 meV. We obtain the charge stability diagram of double QDs using single QDs as a charge sensor. This is the first demonstration of charge sensing in p-type heavily doped silicon QDs. For future time-resolved measurements, we apply radio-frequency reflectometry using impedance matching of LC circuits to the device. We observe the resonance and estimate the capacitance as ∼0.12 pF from the resonant frequency. This value is smaller than that of the devices with top gates on nondoped SOI substrate. This indicates that high-frequency signals can be applied efficiently to p-type silicon QDs without top gates.

Analysis of periprosthetic capsular tissue from women with silicone breast implants by magic-angle spinning NMR.

PubMed

Garrido, L; Young, V L

1999-09-01

The amount of silicone (polydimethylsiloxane [PDMS]) in capsular tissue surgically removed from women with breast implants was measured by using (29)Si and (1)H magic-angle spinning solid-state NMR spectroscopy. Twelve women having smooth surface silicone gel-filled implants, including a subject with "low-bleed" double-lumen implants, had detectable levels of PDMS ranging from 0. 05 to 9.8% silicon in wet tissue (w/w). No silicon-containing compounds other than PDMS were detected. No correlation was found between the amount of PDMS measured in the capsular tissue and the length of implantation time (Pearson correlation coefficient, r = 0. 22). The results showed no relationship between higher amounts of PDMS and capsular contracture (p = 0.74) or other symptoms (p = 0. 53). Magn Reson Med 42:436-441, 1999. Copyright 1999 Wiley-Liss, Inc.

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

NASA Astrophysics Data System (ADS)

Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

2018-06-01

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Double-inversion mechanisms of the X⁻ + CH₃Y [X,Y = F, Cl, Br, I] SN2 reactions.

PubMed

Szabó, István; Czakó, Gábor

2015-03-26

The double-inversion and front-side attack transition states as well as the proton-abstraction channels of the X(-) + CH3Y [X,Y = F, Cl, Br, I] reactions are characterized by the explicitly correlated CCSD(T)-F12b/aug-cc-pVTZ(-PP) level of theory using small-core relativistic effective core potentials and the corresponding aug-cc-pVTZ-PP bases for Br and I. In the X = F case the double-inversion classical(adiabatic) barrier heights are 28.7(25.6), 15.8(13.4), 13.2(11.0), and 8.6(6.6) kcal mol(-1) for Y = F, Cl, Br, and I, respectively, whereas the barrier heights are in the 40-90 kcal mol(-1) range for the other 12 reactions. The abstraction channels are always above the double-inversion saddle points. For X = F, the front-side attack classical(adiabatic) barrier heights, 45.8(44.8), 31.0(30.3), 24.7(24.2), and 19.5(19.3) kcal mol(-1) for Y = F, Cl, Br, and I, respectively, are higher than the corresponding double-inversion ones, whereas for the other systems the front-side attack saddle points are in the 35-70 kcal mol(-1) range. The double-inversion transition states have XH···CH2Y(-) structures with Cs point-group symmetry, and the front-side attack saddle points have either Cs (X = F or X = Y) or C1 symmetry with XCY angles in the 78-88° range. On the basis of the previous reaction dynamics simulations and the minimum energy path computations along the inversion coordinate of selected XH···CH2Y(-) systems, we suggest that the double inversion may be a general mechanism for SN2 reactions.

Silicone derivatives for contact lenses: functionalization, chemical characterization, and cell compatibility assessment.

PubMed

Migonney, V; Lacroix, M D; Ratner, B D; Jozefowicz, M

1995-01-01

Epoxy ring-opening functionalization of polymers at random sites along chains with various chemical groups has been demonstrated. The reaction is performed in an aqueous solution under mild conditions in order to minimize degradation of the macromolecular chains. Silicone lenses made of copolymers with epoxy side chains were functionalized with 4-hydroxybutyric acid, sodium salt. The carboxylated silicone derivatives were characterized by ESCA and radiotracers. A mean value of 30% reaction yield was concluded, based upon data from both methods; nevertheless, the latter can be improved up to 50% or more if the conditions of preparation of the epoxydized silicone lenses are optimized. Derivatized silicones were coated in the wells of culture plates to evaluate the cell compatibility of these new polymers with a fibroblast cell line (McCoy's). No cellular toxicity was observed.

Coatings on reflective mask substrates

DOEpatents

Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

2002-01-01

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Systematization, description, and territory of the caudal cerebral artery in surface of the brain of the ostrich (Struthio camelus).

PubMed

Nazer, Manoel; Campos, Rui

2014-08-01

Brain specimens from 30 ostriches were injected with red-dyed latex via the internal carotid arteries, and the caudal cerebral arteries and their branches were systematically described. On the right side, the caudal cerebral artery was double-, triple-, quadruple-, and single-branched in 73.5%, 23.3%, 3.3%, and 3.3% of cases, respectively; on the left side, it was double-, triple-, quadruple-, and single-branched in 76.7%, 20%, 3.3%, and 3.3% of cases, respectively. The dorsal tectal mesencephalic artery appeared as a single vessel in 96.7% of cases, emerging as a collateral branch of the caudal cerebral artery. The dorsal mesencephalic tectal artery originated from the right dorsal cerebellar artery in 40% of cases and from the left side in 63.3% of cases. On the right side, there were four and three medial occipital hemispheric branches in 46.7% and 20% of cases, respectively; on the left side, there were four and three branches in 30% and 26.7% of cases. On the right side, the pineal artery was double-, single-, triple-, and quadruple-branched in 50%, 23.3%, 20%, and 6.7% of cases, respectively; on the left side, this artery was double-, single-, triple-, and quadruple-branched in 50%, 23.3%, 16.7%, and 10% of cases, respectively. The diencephalic artery was on the right side in 43.3% of cases and on the left side in 56.7% of cases. The interhemispheric artery was on the right side in 56.7% of cases and on the left side in 43.3% of cases; four, three, two, five, and one dorsal hemispheric trunks branched off of the interhemispheric artery in 40%, 40%, 10%, 6.7%, and 26.7% of cases, respectively. The caudal cerebral artery was classified as Type I in 56.7% of cases (subtype IA in 33.3% of cases and IB in 23.3% of cases), Type II in 40% of cases (subtype IIA in 20% of cases and IIB in 20% of cases), and Type III in 3.3% of cases. Copyright © 2014 Wiley Periodicals, Inc.

Double Pass 595 nm Pulsed Dye Laser Does Not Enhance the Efficacy of Port Wine Stains Compared with Single Pass: A Randomized Comparison with Histological Examination.

PubMed

Yu, Wenxin; Zhu, Jiafang; Wang, Lizhen; Qiu, Yajing; Chen, Yijie; Yang, Xi; Chang, Lei; Ma, Gang; Lin, Xiaoxi

2018-03-27

To compare the efficacy and safety of double-pass pulsed dye laser (DWL) and single-pass PDL (SWL) in treating virgin port wine stain (PWS). The increase in the extent of vascular damage attributed to the use of double-pass techniques for PWS remains inconclusive. A prospective, side-by-side comparison with a histological study for virgin PWS is still lacking. Twenty-one patients (11 flat PWS, 10 hypertrophic PWS) with untreated PWS underwent 3 treatments at 2-month intervals. Each PWS was divided into three treatment sites: SWL, DWL, and untreated control. Chromametric and visual evaluation of the efficacy and evaluation of side effects were conducted 3 months after final treatment. Biopsies were taken at the treated sites immediately posttreatment. Chromametric and visual evaluation suggested that DWL sites showed no significant improvement compared with SWL (p > 0.05) in treating PWS. The mean depth of photothermal damage to the vessels was limited to a maximum of 0.36-0.41 mm in both SWL and DWL sides. Permanent side effects were not observed in any patients. Double-pass PDL does not enhance PWS clearance. To improve the clearance of PWS lesions, either the depth of laser penetration should be increased or greater photothermal damage to vessels should be generated.

Design of miniaturized silicon wire and slot waveguide polarization splitterbased on a resonant tunneling.

PubMed

Komatsu, Masa-Aki; Saitoh, Kunimasa; Koshiba, Masanori

2009-10-12

We propose an ultra-small polarization splitter based on a resonant tunneling phenomenon. This polarization splitter consists of two identical horizontally oblong silicon wire waveguides separated by a vertical slot waveguide. The structural parameters of the central resonant slot waveguide are designed to couple only the TM-like mode between the left and right side silicon wire waveguides. Results from numerical simulation with the full-vectorial beam propagation method show that a 16-mum-long polarization splitter with extinction ratio better than -20 dB on the entire C-band is achieved.

Design of a low parasitic inductance SiC power module with double-sided cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Fei; Liang, Zhenxian; Wang, Fei

In this paper, a low-parasitic inductance SiC power module with double-sided cooling is designed and compared with a baseline double-sided cooled module. With the unique 3D layout utilizing vertical interconnection, the power loop inductance is effectively reduced without sacrificing the thermal performance. Both simulations and experiments are carried out to validate the design. Q3D simulation results show a power loop inductance of 1.63 nH, verified by the experiment, indicating more than 60% reduction of power loop inductance compared with the baseline module. With 0Ω external gate resistance turn-off at 600V, the voltage overshoot is less than 9% of the busmore » voltage at a load of 44.6A.« less

Design of permanent magnet eddy current brake for a small scaled electromagnetic launch model

NASA Astrophysics Data System (ADS)

Zhou, Shigui; Yu, Haitao; Hu, Minqiang; Huang, Lei

2012-04-01

A variable pole-pitch double-sided permanent magnet (PM) linear eddy current brake (LECB) is proposed for a small scaled electromagnetic launch model. A two-dimensional (2D) analytical steady state model is presented for the double-sided PM-LECB, and the expression for the braking force is derived. Based on the analytical model, the material and eddy current skin effect of the conducting plate are analyzed. Moreover, a variable pole-pitch double-sided PM-LECB is proposed for the effective braking of the moving plate. In addition, the braking force is predicted by finite element (FE) analysis, and the simulated results are in good agreement with the analytical model. Finally, a prototype is presented to test the braking profile for validation of the proposed design.

Asymmetry-symmetry transition of double-sided adhesive tapes

NASA Astrophysics Data System (ADS)

Yamaguchi, Tetsuo; Muroo, Hiroyuki; Sumino, Yutaka; Doi, Masao

2012-06-01

We report on the debonding process of a double-sided adhesive tape sandwiched between two glass plates. When the glass plates are separated from each other at a constant rate, a highly asymmetric extension of top and bottom adhesive layers and bending of the inner film are observed first. As the separation proceeds, the elongation of both layers becomes symmetric, and the inner film becomes flat again. When this happens, there appears a local maximum in the force-displacement curve. We explain this asymmetry-symmetry transition and discuss the role of the bimodal force-displacement relation of each adhesive layer. We also discuss the effect of the inner film thickness and the separation rate on the debonding behavior, which causes undesirable early detachment of the double-sided adhesive tape in a certain condition.

Integrated TiN coated porous silicon supercapacitor with large capacitance per foot print

NASA Astrophysics Data System (ADS)

Grigoras, Kestutis; Grönberg, Leif; Ahopelto, Jouni; Prunnila, Mika

2017-05-01

We have fabricated a micro-supercapacitor with porous silicon electrodes coated with TiN by atomic layer deposition technique. The coating provides an efficient surface passivation and high electrical conductivity of the electrodes, resulting in stable and almost ideal electrochemical double layer capacitor behavior with characteristics comparable to the best carbon based micro-supercapacitors. Stability of the supercapacitor is verified by performing 50 000 voltammetry cycles with high capacitance retention obtained. Silicon microfabrication techniques facilitate integration of both supercapacitor electrodes inside the silicon substrate and, in this work, such in-chip supercapacitor is demonstrated. This approach allows realization of very high capacitance per foot print area. The in-chip micro-supercapacitor can be integrated with energy harvesting elements and can be used in wearable and implantable microdevices.

Unanticipated C=C bonds in covalent monolayers on silicon revealed by NEXAFS.

PubMed

Lee, Michael V; Lee, Jonathan R I; Brehmer, Daniel E; Linford, Matthew R; Willey, Trevor M

2010-02-02

Interfaces are crucial to material properties. In the case of covalent organic monolayers on silicon, molecular structure at the interface controls the self-assembly of the monolayers, which in turn influences the optical properties and electrical transport. These properties intrinsically affect their application in biology, tribology, optics, and electronics. We use near-edge X-ray absorption fine structure spectroscopy to show that the most basic covalent monolayers formed from 1-alkenes on silicon retain a double bond in one-fifth to two-fifths of the resultant molecules. Unsaturation in the predominantly saturated monolayers will perturb the regular order and affect the dependent properties. The presence of unsaturation in monolayers produced by two different methods also prompts the re-evaluation of other radical-based mechanisms for forming covalent monolayers on silicon.

Cell force mapping using a double-sided micropillar array based on the moiré fringe method

NASA Astrophysics Data System (ADS)

Zhang, F.; Anderson, S.; Zheng, X.; Roberts, E.; Qiu, Y.; Liao, R.; Zhang, X.

2014-07-01

The mapping of traction forces is crucial to understanding the means by which cells regulate their behavior and physiological function to adapt to and communicate with their local microenvironment. To this end, polymeric micropillar arrays have been used for measuring cell traction force. However, the small scale of the micropillar deflections induced by cell traction forces results in highly inefficient force analyses using conventional optical approaches; in many cases, cell forces may be below the limits of detection achieved using conventional microscopy. To address these limitations, the moiré phenomenon has been leveraged as a visualization tool for cell force mapping due to its inherent magnification effect and capacity for whole-field force measurements. This Letter reports an optomechanical cell force sensor, namely, a double-sided micropillar array (DMPA) made of poly(dimethylsiloxane), on which one side is employed to support cultured living cells while the opposing side serves as a reference pattern for generating moiré patterns. The distance between the two sides, which is a crucial parameter influencing moiré pattern contrast, is predetermined during fabrication using theoretical calculations based on the Talbot effect that aim to optimize contrast. Herein, double-sided micropillar arrays were validated by mapping mouse embryo fibroblast contraction forces and the resulting force maps compared to conventional microscopy image analyses as the reference standard. The DMPA-based approach precludes the requirement for aligning two independent periodic substrates, improves moiré contrast, and enables efficient moiré pattern generation. Furthermore, the double-sided structure readily allows for the integration of moiré-based cell force mapping into microfabricated cell culture environments or lab-on-a-chip devices.

Stress analysis in tungsten and Si 3N 4 coated silicon wafers

NASA Astrophysics Data System (ADS)

Ogilvie, Robert E.; Nicolich, Jeffrey

2009-08-01

A paper by G. Gerald Stoney [Gerald Stoney, The Tension of Metallic Films Deposited by Electrolysis, Proc. R. Soc. Lond. A 82 (1909) 172-175], entitled "The Tension of Metallic Films deposited by Electrolysis," was presented to the Royal Society of London by the Hon. C. A. Parsons. It was well known at that time that films deposited electrolytically were liable to peel off when exceeding a certain thickness. After examining many thin Steel rules of thickness d which have a thin, t, deposit of Nickel, which curved the Rule to a radius r. Taking the moments about the point b for the steel, Stoney then arrived at the following equation where the integral must be equal to zero; ∫d0(E/r)(b-x)xdx=0sothat b=2/3d From the solution of Eq. (1), we obtain the important fact that the neutral plane is at 2/3 the thickness of the rule from film surface. This also implies that the absolute value of the stress on the film side is twice that on the opposite side of the steel rule. The important point is that if the absolute stress in the silicon on the film side is twice that on the opposite side then the position of the neutral plane must be at 2/3 d. The purpose of this paper is to show that the neutral plane in silicon wafers, which have a thin film (~ 3 μm) of tungsten or Si 3N 4 is indeed at 2/3 the thickness of the wafer.

Opened end-to-side technique for end-to-side anastomosis and analyses by an elastic true-to-scale silicone rubber model.

PubMed

Mücke, Thomas; Ritschl, Lucas M; Balasso, Andrea; Wolff, Klaus-Dietrich; Mitchell, David A; Liepsch, Dieter

2014-01-01

The end-to-side anastomosis is frequently used in microvascular free flap transfer, but detailed rheological analyses are not available. The purpose of this study was to introduce a new modified end-to-side (Opened End-to-Side, OES-) technique and compare the resulting flow pattern to a conventional technique. The new technique was based on a bi-triangulated preparation of the branching-vessel end, resulting in a "fish-mouthed" opening. We performed two different types of end-to-side anastomoses in forty pig coronary arteries and produced one elastic, true-to-scale silicone rubber model of each anastomosis. Then we installed the transparent models in a circulatory experimental setup that simulated the physiological human blood flow. Flow velocity was measured with the one-component Laser-Doppler-Anemometer system, recording flow axial and perpendicular to the model at four defined cross-sections for seven heart cycles in each model. Maximal and minimal axial velocities ranged in the conventional model between 0.269 and -0.122 m/s and in the experimental model between 0.313 and -0.153 m/s. A less disturbed flow velocity distribution was seen in the experimental model distal to the anastomosis. The OES-technique showed superior flow profiles distal to the anastomosis with minor tendencies of flow separation and represents a new alternative for end-to-side anastomosis. Copyright © 2013 Wiley Periodicals, Inc.

Stability and rheology of dispersions of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1987-01-01

The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

An all-silicone zoom lens in an optical imaging system

NASA Astrophysics Data System (ADS)

Zhao, Cun-Hua

2013-09-01

An all-silicone zoom lens is fabricated. A tunable metal ringer is fettered around the side edge of the lens. A nylon rope linking a motor is tied, encircling the notch in the metal ringer. While the motor is operating, the rope can shrink or release to change the focal length of the lens. A calculation method is developed to obtain the focal length and the zoom ratio. The testing is carried out in succession. The testing values are compared with the calculated ones, and they tally with each other well. Finally, the imaging performance of the all-silicone lens is demonstrated. The all-silicone lens has potential uses in cellphone cameras, notebook cameras, micro monitor lenses, etc.

Design of an Experiment to Measure ann Using 3H(γ, pn)n at HIγS★

NASA Astrophysics Data System (ADS)

Friesen, F. Q. L.; Ahmed, M. W.; Crowe, B. J.; Crowell, A. S.; Cumberbatch, L. C.; Fallin, B.; Han, Z.; Howell, C. R.; Malone, R. M.; Markoff, D.; Tornow, W.; Witała, H.

2016-03-01

We provide an update on the development of an experiment at TUNL for determining the 1S0 neutron-neutron (nn) scattering length (ann) from differential cross-section measurements of three-body photodisintegration of the triton. The experiment will be conducted using a linearly polarized gamma-ray beam at the High Intensity Gamma-ray Source (HIγS) and tritium gas contained in thin-walled cells. The main components of the planned experiment are a 230 Ci gas target system, a set of wire chambers and silicon strip detectors on each side of the beam axis, and an array of neutron detectors on each side beyond the silicon detectors. The protons emitted in the reaction are tracked in the wire chambers and their energy and position are measured in silicon strip detectors. The first iteration of the experiment will be simplified, making use of a collimator system, and silicon detectors to interrogate the main region of interest near 90° in the polar angle. Monte-Carlo simulations based on rigorous 3N calculations have been conducted to validate the sensitivity of the experimental setup to ann. This research supported in part by the DOE Office of Nuclear Physics Grant Number DE-FG02-97ER41033

Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression.

PubMed

He, Jian; Gao, Pingqi; Liao, Mingdun; Yang, Xi; Ying, Zhiqin; Zhou, Suqiong; Ye, Jichun; Cui, Yi

2015-06-23

Hybrid silicon/polymer solar cells promise to be an economically feasible alternative energy solution for various applications if ultrathin flexible crystalline silicon (c-Si) substrates are used. However, utilization of ultrathin c-Si encounters problems in light harvesting and electronic losses at surfaces, which severely degrade the performance of solar cells. Here, we developed a metal-assisted chemical etching method to deliver front-side surface texturing of hierarchically bowl-like nanopores on 20 μm c-Si, enabling an omnidirectional light harvesting over the entire solar spectrum as well as an enlarged contact area with the polymer. In addition, a back surface field was introduced on the back side of the thin c-Si to minimize the series resistance losses as well as to suppress the surface recombination by the built high-low junction. Through these improvements, a power conversion efficiency (PCE) up to 13.6% was achieved under an air mass 1.5 G irradiation for silicon/organic hybrid solar cells with the c-Si thickness of only about 20 μm. This PCE is as high as the record currently reported in hybrid solar cells constructed from bulk c-Si, suggesting a design rule for efficient silicon/organic solar cells with thinner absorbers.

A density functional theory model of mechanically activated silyl ester hydrolysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pill, Michael F.; Schmidt, Sebastian W.; Institut für Physikalische Chemie, Christian-Albrechts-Universität zu Kiel, Olshausenstraße 40, 24098 Kiel

2014-01-28

To elucidate the mechanism of the mechanically activated dissociation of chemical bonds between carboxymethylated amylose (CMA) and silane functionalized silicon dioxide, we have investigated the dissociation kinetics of the bonds connecting CMA to silicon oxide surfaces with density functional calculations including the effects of force, solvent polarizability, and pH. We have determined the activation energies, the pre-exponential factors, and the reaction rate constants of candidate reactions. The weakest bond was found to be the silyl ester bond between the silicon and the alkoxy oxygen atom. Under acidic conditions, spontaneous proton addition occurs close to the silyl ester such that neutralmore » reactions become insignificant. Upon proton addition at the most favored position, the activation energy for bond hydrolysis becomes 31 kJ mol{sup −1}, which agrees very well with experimental observation. Heterolytic bond scission in the protonated molecule has a much higher activation energy. The experimentally observed bi-exponential rupture kinetics can be explained by different side groups attached to the silicon atom of the silyl ester. The fact that different side groups lead to different dissociation kinetics provides an opportunity to deliberately modify and tune the kinetic parameters of mechanically activated bond dissociation of silyl esters.« less

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de; National Renewable Energy Laboratory; Feldmann, Frank

Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells.more » Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.« less

Comparison of Transformer Winding Methods for Contactless Power Transfer Systems of Electric Vehicle

NASA Astrophysics Data System (ADS)

Kaneko, Yasuyoshi; Ehara, Natsuki; Iwata, Takuya; Abe, Shigeru; Yasuda, Tomio; Ida, Kazuhiko

This paper describes the comparison of the characteristics of double- and single-sided windings of contactless power transfer systems used in electric vehicles. The self-inductance changes with the electric current when the gap length is fixed in single-sided windings. The issue is resolved by maintaining the secondary voltage constant. In the case of double-sided windings, the transformer can be miniaturized in comparison with the single-sided winding transformer. However, the coupling factor is small, and appropriate countermeasures must be adopted to reduce the back leakage flux. The leakage flux is reduced by placing an aluminum board behind the transformer. Thus, the coupling factor increases.

Molecular-Beam-Epitaxy Program

NASA Technical Reports Server (NTRS)

Sparks, Patricia D.

1988-01-01

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

Identification of doubly excited states in nonsequential double ionization of Ar in strong laser fields

NASA Astrophysics Data System (ADS)

Chen, Zhangjin; Li, Xiaojin; Sun, Xiaoli; Hao, Xiaolei; Chen, Jing

2017-12-01

We use the semiclassical model to study the intensity dependence of nonsequential double ionization (NSDI) of Ar in short strong laser pulses. The contributions to NSDI through sequential ionization of doubly excited states (SIDE) are identified by tracking the energy trajectories of the two outgoing electrons. The correlated electron momentum distributions are calculated from which the longitudinal momentum distributions of the fast and the slow electrons for the side-by-side and the back-to-back emissions are obtained. The simulated momentum distributions of the fast and the slow electrons for NSDI of Ar by linearly polarized fields with a wavelength of 795 nm at an intensity of 7 × 1013 W cm-2 are in good agreement with the experimental measurements of Liu et al (2014 Phys. Rev. Lett. 112 013003). We demonstrate that the process of double ionization through SIDE dominates NSDI only when the laser intensities are below the recollision threshold; nevertheless, for higher intensities the SIDE process still takes place although the contribution to the NSDI yields decreases rapidly as the intensity increases. It has been found that for SIDE at different intensities, both the correlated electron momentum spectra and the momentum distributions of the fast and the slow electrons remain the same.

Composite flexible blanket insulation

NASA Technical Reports Server (NTRS)

Kourtides, Demetrius A. (Inventor); Lowe, David M. (Inventor)

1994-01-01

An improved composite flexible blanket insulation is presented comprising top silicon carbide having an interlock design, wherein the reflective shield is composed of single or double aluminized polyimide and wherein the polyimide film has a honeycomb pattern.

Ultrasonographic assessment of the quadriceps muscle and femoral cartilage in transtibial amputees using different prostheses.

PubMed

Şahin Onat, Şule; Malas, Fevziye Ünsal; Öztürk, Gökhan Tuna; Akkaya, Nuray; Kara, Murat; Özçakar, Levent

2016-08-01

In patients with lower limb amputations, gait alteration, increased loading on the intact extremity, and use of prosthesis may lead to joint degeneration. To explore the effects of prosthesis type on quadriceps muscle and distal femoral cartilage thicknesses in transtibial amputees. A cross-sectional study. A total of 38 below-knee amputees were enrolled in the study, of which 13 patients were using vacuum system type prosthesis and 25 patients were using silicon liner pin system prosthesis. Patients' femoral cartilage and quadriceps muscle thickness measurements were performed using musculoskeletal ultrasound. When compared with the intact sides, cartilage and rectus femoris, vastus intermedius, and vastus medialis muscle thickness values were significantly decreased on the amputee sides (all p < 0.05). Clinical characteristics and ultrasound measurements were similar between the two groups except the lateral and medial femoral condyle thicknesses, thinner in the silicon liner pin system users (both p < 0.05). The distal femoral cartilage and quadriceps muscle thicknesses were found to be decreased on the amputated sides, and the negative impact on the cartilage seemed to be worse in the silicon liner pin system users. This study might provide another argument as regards the preference of vacuum system type prosthesis to prevent possible knee osteoarthritis due to cartilage thinning in adult transtibial amputees. © The International Society for Prosthetics and Orthotics 2015.

Microelectromechanical pump utilizing porous silicon

DOEpatents

Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

2011-07-19

A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

Theoretical study of pyramid sizes and scattering effects in silicon photovoltaic module stacks.

PubMed

Höhn, Oliver; Tucher, Nico; Bläsi, Benedikt

2018-03-19

Front side pyramids are the industrial standard for wafer based monocrystalline silicon solar cells. These pyramids fulfill two tasks: They act as anti-reflective structure on the one hand and as a light-trapping structure on the other hand. In recent development smaller pyramids with sizes below 1 µm attract more and more interest. In this paper an optical analysis of periodically arranged front side pyramids is performed. The impact on the reflectance as well as on the useful absorption within the solar cell is investigated depending on the pyramids size, the amount of additional scattering in the system and the quality of the rear side reflector. In contrast to other investigations not only the solar cell, but the full photovoltaic (PV) module stack is considered. This can strongly influence results, as we show in this paper. The results indicate that in a PV module stack with realistic assumptions for the amount of scattering as well as for the rear side reflectance only small differences for pyramids with sizes above 600 nm occur. Preliminary conclusions for random pyramids deduced from these results for periodically arranged pyramids indicate that these differences could become even smaller.

Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient.

PubMed

Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyeon; Kim, Soojung; Jeon, Hyojin; Shin, Mincheol; Jang, Moongyu

2013-12-01

We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.

Electrical-assisted double side incremental forming and processes thereof

DOEpatents

Roth, John; Cao, Jian

2014-06-03

A process for forming a sheet metal component using an electric current passing through the component is provided. The process can include providing a double side incremental forming machine, the machine operable to perform a plurality of double side incremental deformations on the sheet metal component and also apply an electric direct current to the sheet metal component during at least part of the forming. The direct current can be applied before or after the forming has started and/or be terminated before or after the forming has stopped. The direct current can be applied to any portion of the sheet metal. The electrical assistance can reduce the magnitude of force required to produce a given amount of deformation, increase the amount of deformation exhibited before failure and/or reduce any springback typically exhibited by the sheet metal component.

Double-sided anodic titania nanotube arrays: a lopsided growth process.

PubMed

Sun, Lidong; Zhang, Sam; Sun, Xiao Wei; Wang, Xiaoyan; Cai, Yanli

2010-12-07

In the past decade, the pore diameter of anodic titania nanotubes was reported to be influenced by a number of factors in organic electrolyte, for example, applied potential, working distance, water content, and temperature. All these were closely related to potential drop in the organic electrolyte. In this work, the essential role of electric field originating from the potential drop was directly revealed for the first time using a simple two-electrode anodizing method. Anodic titania nanotube arrays were grown simultaneously at both sides of a titanium foil, with tube length being longer at the front side than that at the back side. This lopsided growth was attributed to the higher ionic flux induced by electric field at the front side. Accordingly, the nanotube length was further tailored to be comparable at both sides by modulating the electric field. These results are promising to be used in parallel configuration dye-sensitized solar cells, water splitting, and gas sensors, as a result of high surface area produced by the double-sided architecture.

Fabrication and characterization of an ultrasensitive acousto-optical cantilever

NASA Astrophysics Data System (ADS)

Sievilä, P.; Rytkönen, V.-P.; Hahtela, O.; Chekurov, N.; Kauppinen, J.; Tittonen, I.

2007-05-01

A cantilever-type silicon device for sensing changes in pressure has been designed, fabricated and characterized. The microfabrication process is based on two-sided etching of silicon-on insulator (SOI) wafers. The rectangular cantilevers are 9.5 µm thick, and cover an area of a few square millimeters. The cantilevers are surrounded by thick and tight frames, since on the three free sides there are only narrow, micrometer sized air gaps between the cantilever and the frame. This design and excellent mechanical properties of single crystal silicon enable sensitive detection of time-dependent gas pressure variations, i.e. acoustic waves. The mechanical properties of the cantilever have been characterized by analyzing its dynamic behavior. The resonance frequency and the mechanical vibrational mode patterns have been determined using finite-element method (FEM) simulations and laser interferometry. These results are found to be in good agreement with each other. Initially this mechanical door-like cantilever was designed to be used in ultra-high sensitivity photoacoustic gas sensing, but it can also be applied quite generally in various kinds of sound wave detection schemes.

An evaluation of strain measuring devices for ceramic composites

NASA Technical Reports Server (NTRS)

Gyekenyesi, John Z.; Bartolotta, Paul A.

1991-01-01

A series of tensile tests was conducted on SiC/reaction bonded silicon nitrides (RBSN) composites using different methods of strain measurement. The tests were used to find the optimum strain sensing device for use with continuous fiber reinforced ceramic matrix composites in ambient and high temperature environments. Bonded resistance gages were found to offer excellent performance for room temperature tests. The clip-on gage offers the same performance, but less time is required for mounting it to the specimen. Low contact force extensometers track the strain with acceptable results at high specimen temperatures. Silicon carbide rods with knife edges are preferred. The edges must be kept sharp. The strain measuring devices should be mounted on the flat side of the specimen. This is in contrast to mounting on the rough thickness side.

Detection of gain enhancement in laser-induced fluorescence of rhodamine B lasing dye by silicon dioxide nanostructures-coated cavity

NASA Astrophysics Data System (ADS)

Al-Tameemi, Mohammed N. A.

2018-03-01

In this work, nanostructured silicon dioxide films are deposited by closed-field unbalanced direct-current (DC) reactive magnetron sputtering technique on two sides of quartz cells containing rhodamine B dye dissolved in ethanol with 10‒5 M concentration as a random gain medium. The preparation conditions are optimized to prepare highly pure SiO2 nanostructures with a minimum particle size of about 20 nm. The effect of SiO2 films as external cavity for the random gain medium is determined by the laser-induced fluorescence of this medium, and an increase of about 200% in intensity is observed after the deposition of nanostructured SiO2 thin films on two sides of the dye cell.

3D-fabrication of tunable and high-density arrays of crystalline silicon nanostructures

NASA Astrophysics Data System (ADS)

Wilbers, J. G. E.; Berenschot, J. W.; Tiggelaar, R. M.; Dogan, T.; Sugimura, K.; van der Wiel, W. G.; Gardeniers, J. G. E.; Tas, N. R.

2018-04-01

In this report, a procedure for the 3D-nanofabrication of ordered, high-density arrays of crystalline silicon nanostructures is described. Two nanolithography methods were utilized for the fabrication of the nanostructure array, viz. displacement Talbot lithography (DTL) and edge lithography (EL). DTL is employed to perform two (orthogonal) resist-patterning steps to pattern a thin Si3N4 layer. The resulting patterned double layer serves as an etch mask for all further etching steps for the fabrication of ordered arrays of silicon nanostructures. The arrays are made by means of anisotropic wet etching of silicon in combination with an isotropic retraction etch step of the etch mask, i.e. EL. The procedure enables fabrication of nanostructures with dimensions below 15 nm and a potential density of 1010 crystals cm-2.

Development of high-efficiency solar cells on silicon web

NASA Technical Reports Server (NTRS)

Meier, D. L.; Greggi, J.; Rai-Choudhury, P.

1986-01-01

Work is reported aimed at identifying and reducing sources of carrier recombination both in the starting web silicon material and in the processed cells. Cross-sectional transmission electron microscopy measurements of several web cells were made and analyzed. The effect of the heavily twinned region on cell efficiency was modeled, and the modeling results compared to measured values for processed cells. The effects of low energy, high dose hydrogen ion implantation on cell efficiency and diffusion length were examined. Cells were fabricated from web silicon known to have a high diffusion length, with a new double layer antireflection coating being applied to these cells. A new contact system, to be used with oxide passivated cells and which greatly reduces the area of contact between metal and silicon, was designed. The application of DLTS measurements to beveled samples was further investigated.

Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

PubMed Central

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed. PMID:24459433

Technology of an adhesive silicone film as drug carrier in transdermal therapy. I: Analytical methods used for characterization and design of the universal elastomer layers.

PubMed

Mojsiewicz-Pieńkowska, Krystyna; Jamrógiewicz, Marzena; Zebrowska, Maria; Sznitowska, Małgorzata; Centkowska, Katarzyna

2011-08-25

Silicone polymers possess unique properties, which make them suitable for many different applications, for example in the pharmaceutical and medical industry. To create an adhesive silicone film, the appropriate silicone components have to be chosen first. From these components two layers were made: an adhesive elastomer applied on the skin, and a non-adhesive elastomer on the other side of the film. The aim of this study was to identify a set of analytical methods that can be used for detailed characterization of the elastomer layers, as needed when designing new silicone films. More specifically, the following methods were combined to detailed identification of the silicone components: Fourier transform infrared spectroscopy (FTIR), proton nuclear magnetic resonance (¹H NMR) and size exclusion chromatography with evaporative light scattering detector (SEC-ELSD). It was demonstrated that these methods together with a rheological analysis are suitable for controlling the cross-linking reaction, thus obtaining the desired properties of the silicone film. Adhesive silicone films can be used as universal materials for medical use, particularly for effective treatment of scars and keloids or as drug carriers in transdermal therapy.

Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

PubMed

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

A fabrication guide for planar silicon quantum dot heterostructures

NASA Astrophysics Data System (ADS)

Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

2018-04-01

We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

Low frequency acoustic properties of a honeycomb-silicone rubber acoustic metamaterial

NASA Astrophysics Data System (ADS)

Gao, Nansha; Hou, Hong

2017-04-01

In order to overcome the influence of mass law on traditional acoustic materials and obtain a lightweight thin-layer structure which can effectively isolate the low frequency noises, a honeycomb-silicone rubber acoustic metamaterial was proposed. Experimental results show that the sound transmission loss (STL) of acoustic metamaterial in this paper is greatly higher than that of monolayer silicone rubber metamaterial. Based on the band structure, modal shapes, as well as the sound transmission simulation, the sound insulation mechanism of the designed honeycomb-silicone rubber structure was analyzed from a new perspective, which had been validated experimentally. Side length of honeycomb structure and thickness of the unit structure would affect STL in damping control zone. Relevant conclusions and design method provide a new concept for engineering noise control.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Graphene field-effect devices

NASA Astrophysics Data System (ADS)

Echtermeyer, T. J.; Lemme, M. C.; Bolten, J.; Baus, M.; Ramsteiner, M.; Kurz, H.

2007-09-01

In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs).

Development of a Silicon Metal-Oxide-Semiconductor-Based Qubit Using Spin Exchange Interactions Alone

DTIC Science & Technology

2016-03-31

Electron spin resonance and spin–valley physics in a silicon double quantum dot, Nature Communications, (05 2014): 0. doi: 10.1038/ncomms4860 Ming...new scheme to better manipulate the exchange-only qubit using a pulsed RF source [5], known as a resonant -exchange-qubit [6,7], in GaAs further...triple points into a quadruple point [10], as shown in Fig. 1. We can also gate control the tunnel coupling over a broad energy range. The

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y.; Fan, A.; Fiorillo, G.

Rare event search experiments, such as those searching for dark matter and observations of neutrinoless double beta decay, require ultra low levels of radioactive background for unmistakable identification. In order to reduce the radioactive background of detectors used in these types of event searches, low background photosensors are required, as the physical size of these detectors become increasing larger, and hence the number of such photosensors used also increases rapidly. Considering that most dark matter and neutrinoless double beta decay experiments are turning towards using noble liquids as the target choice, liquid xenon and liquid argon for instance, photosensors thatmore » can work well at cryogenic temperatures are required, 165 K and 87 K for liquid xenon and liquid argon, respectively. The Silicon Geiger Hybrid Tube (SiGHT) is a novel photosensor designed specifically for use in ultra low background experiments operating at cryogenic temperatures. It is based on the proven photocathode plus silicon photomultiplier (SiPM) hybrid technology and consists of very few other, but also ultra radio-pure, materials like fused silica and silicon for the SiPM. Lastly, the introduction of the SiGHT concept, as well as a feasibility study for its production, is reported in this article.« less

A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS

NASA Astrophysics Data System (ADS)

Kawamoto, Kazunori; Mizuno, Shoji; Abe, Hirofumi; Higuchi, Yasushi; Ishihara, Hideaki; Fukumoto, Harutsugu; Watanabe, Takamoto; Fujino, Seiji; Shirakawa, Isao

2001-04-01

Using the example of an air bag controller, a single chip solution for automotive sub-control systems is investigated, by using a technological combination of improved circuits, bipolar complimentary metal oxide silicon double-diffused metal oxide silicon (BiCDMOS) and thick silicon on insulator (SOI). For circuits, an automotive specific reduced instruction set computer (RISC) center processing unit (CPU), and a novel, all integrated system clock generator, dividing digital phase-locked loop (DDPLL) are proposed. For the device technologies, the authors use SOI-BiCDMOS with trench dielectric-isolation (TD) which enables integration of various devices in an integrated circuit (IC) while avoiding parasitic miss operations by ideal isolation. The structures of the SOI layer and TD, are optimized for obtaining desired device characteristics and high electromagnetic interference (EMI) immunity. While performing all the air bag system functions over a wide range of supply voltage, and ambient temperature, the resulting single chip reduces the electronic parts to about a half of those in the conventional air bags. The combination of single chip oriented circuits and thick SOI-BiCDMOS technologies offered in this work is valuable for size reduction and improved reliability of automotive electronic control units (ECUs).

Properties, performance and associated hazards of state-of-the-art durable water repellent (DWR) chemistry for textile finishing.

PubMed

Holmquist, H; Schellenberger, S; van der Veen, I; Peters, G M; Leonards, P E G; Cousins, I T

2016-05-01

Following the phase-out of long-chain per- and polyfluoroalkyl substances (PFASs), the textile industry had to find alternatives for side-chain fluorinated polymer based durable water repellent (DWR) chemistries that incorporated long perfluoroalkyl side chains. This phase-out and subsequent substitution with alternatives has resulted in a market where both fluorinated and non-fluorinated DWRs are available. These DWR alternatives can be divided into four broad groups that reflect their basic chemistry: side-chain fluorinated polymers, silicones, hydrocarbons and other chemistries (includes dendrimer and inorganic nanoparticle chemistries). In this critical review, the alternative DWRs are assessed with regards to their structural properties and connected performance, loss and degradation processes resulting in diffuse environmental emissions, and hazard profiles for selected emitted substances. Our review shows that there are large differences in performance between the alternative DWRs, most importantly the lack of oil repellence of non-fluorinated alternatives. It also shows that for all alternatives, impurities and/or degradation products of the DWR chemistries are diffusively emitted to the environment. Our hazard ranking suggests that hydrocarbon based DWR is the most environmentally benign, followed by silicone and side-chain fluorinated polymer-based DWR chemistries. Industrial commitments to reduce the levels of impurities in silicone based and side-chain fluorinated polymer based DWR formulations will lower the actual risks. There is a lack of information on the hazards associated with DWRs, in particular for the dendrimer and inorganic nanoparticle chemistries, and these data gaps must be filled. Until environmentally safe alternatives, which provide the required performance, are available our recommendation is to choose DWR chemistry on a case-by-case basis, always weighing the benefits connected to increased performance against the risks to the environment and human health. Copyright © 2016 Elsevier Ltd. All rights reserved.

Effects of silicone gel on burn scars.

PubMed

Momeni, Mahnoush; Hafezi, Farhad; Rahbar, Hossein; Karimi, Hamid

2009-02-01

To study the efficacy of silicone gel applied to hypertrophic burn scars, in reducing scar interference with normal function and improving cosmesis. A randomised, double-blind, placebo-controlled trial involving 38 people with hypertrophic burn scars. Each scar was divided into two segments; silicone gel sheet was applied randomly to one of the two and placebo to the other. Participants were seen again after 1 and 4 months. Their data and wound characteristics were collected using the Vancouver scar scale. The median age of participants was 22 years (1.5-60 years) and 16 were male; 4 did not attend follow-up and were excluded from the study. There were no significant differences in baseline characteristics. Although after 1 month all scar scale measures were lower in treated areas, only the vascularity scale was significantly different between the two areas. After 4 months, all scale measures were significantly lower in the silicone gel group than in the control group, except for the pain score. Silicone gel is an effective treatment for hypertrophic burn scars.

Processes for producing low cost, high efficiency silicon solar cells

DOEpatents

Rohatgi, Ajeet; Chen, Zhizhang; Doshi, Parag

1996-01-01

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horibe, Kosuke; Oda, Shunri; Kodera, Tetsuo, E-mail: kodera.t.ac@m.titech.ac.jp

2015-02-23

Silicon quantum dot (QD) devices with a proximal single-electron transistor (SET) charge sensor have been fabricated in a metal-oxide-semiconductor structure based on a silicon-on-insulator substrate. The charge state of the QDs was clearly read out using the charge sensor via the SET current. The lithographically defined small QDs enabled clear observation of the few-electron regime of a single QD and a double QD by charge sensing. Tunnel coupling on tunnel barriers of the QDs can be controlled by tuning the top-gate voltages, which can be used for manipulation of the spin quantum bit via exchange interaction between tunnel-coupled QDs. Themore » lithographically defined silicon QD device reported here is technologically simple and does not require electrical gates to create QD confinement potentials, which is advantageous for the integration of complicated constructs such as multiple QD structures with SET charge sensors for the purpose of spin-based quantum computing.« less

An Array of Layers in Silicon Sulfides: Chain-like and Ground State Structures

NASA Astrophysics Data System (ADS)

Alonso-Lanza, Tomás; Ayuela, Andrés; Aguilera-Granja, Faustino

While much is known about isoelectronic materials related to carbon nanostructures, such as boron nitride layers and nanotubes, rather less is known about equivalent silicon based materials. Following the recent discovery of phosphorene, we here discuss isoelectronic silicon monosulfide monolayers. We describe a set of anisotropic ground state structures that clearly have a high stability with respect to the near isotropic silicon monosulfide monolayers. The source of the layer anisotropy is related to the presence of Si-S double chains linked by some Si-Si covalent bonds, which lie at the core of the increased stability, together with a remarkable spd hybridization on Si. The involvement of d orbitals brings more variety to silicon-sulfide based nanostructures that are isoelectronic to phosphorene, which could be relevant for future applications, adding extra degrees of freedom. Spanish Ministry of Economy and Competitiveness MINECO, Basque Government (ETORTEK Program 2014), University of the Basque Country (GrantGrant No. IT-366-07) and MPC Material Physics Center - San Sebastián.

23.6%-efficient monolithic perovskite/silicon tandem solar cells with improved stability

NASA Astrophysics Data System (ADS)

Bush, Kevin A.; Palmstrom, Axel F.; Yu, Zhengshan J.; Boccard, Mathieu; Cheacharoen, Rongrong; Mailoa, Jonathan P.; McMeekin, David P.; Hoye, Robert L. Z.; Bailie, Colin D.; Leijtens, Tomas; Peters, Ian Marius; Minichetti, Maxmillian C.; Rolston, Nicholas; Prasanna, Rohit; Sofia, Sarah; Harwood, Duncan; Ma, Wen; Moghadam, Farhad; Snaith, Henry J.; Buonassisi, Tonio; Holman, Zachary C.; Bent, Stacey F.; McGehee, Michael D.

2017-02-01

As the record single-junction efficiencies of perovskite solar cells now rival those of copper indium gallium selenide, cadmium telluride and multicrystalline silicon, they are becoming increasingly attractive for use in tandem solar cells due to their wide, tunable bandgap and solution processability. Previously, perovskite/silicon tandems were limited by significant parasitic absorption and poor environmental stability. Here, we improve the efficiency of monolithic, two-terminal, 1-cm2 perovskite/silicon tandems to 23.6% by combining an infrared-tuned silicon heterojunction bottom cell with the recently developed caesium formamidinium lead halide perovskite. This more-stable perovskite tolerates deposition of a tin oxide buffer layer via atomic layer deposition that prevents shunts, has negligible parasitic absorption, and allows for the sputter deposition of a transparent top electrode. Furthermore, the window layer doubles as a diffusion barrier, increasing the thermal and environmental stability to enable perovskite devices that withstand a 1,000-hour damp heat test at 85 ∘C and 85% relative humidity.

Porous Nanocrystalline Silicon Supported Bimetallic Pd-Au Catalysts: Preparation, Characterization, and Direct Hydrogen Peroxide Synthesis

PubMed Central

Potemkin, Dmitriy I.; Maslov, Dmitry K.; Loponov, Konstantin; Snytnikov, Pavel V.; Shubin, Yuri V.; Plyusnin, Pavel E.; Svintsitskiy, Dmitry A.; Sobyanin, Vladimir A.; Lapkin, Alexei A.

2018-01-01

Bimetallic Pd-Au catalysts were prepared on the porous nanocrystalline silicon (PSi) for the first time. The catalysts were tested in the reaction of direct hydrogen peroxide synthesis and characterized by standard structural and chemical techniques. It was shown that the Pd-Au/PSi catalyst prepared from conventional H2[PdCl4] and H[AuCl4] precursors contains monometallic Pd and a range of different Pd-Au alloy nanoparticles over the oxidized PSi surface. The PdAu2/PSi catalyst prepared from the [Pd(NH3)4][AuCl4]2 double complex salt (DCS) single-source precursor predominantly contains bimetallic Pd-Au alloy nanoparticles. For both catalysts the surface of bimetallic nanoparticles is Pd-enriched and contains palladium in Pd0 and Pd2+ states. Among the catalysts studied, the PdAu2/PSi catalyst was the most active and selective in the direct H2O2 synthesis with H2O2 productivity of 0.5 mol gPd-1 h-1 at selectivity of 50% and H2O2 concentration of 0.023 M in 0.03 M H2SO4-methanol solution after 5 h on stream at −10°C and atmospheric pressure. This performance is due to high activity in the H2O2 synthesis reaction and low activities in the undesirable H2O2 decomposition and hydrogenation reactions. Good performance of the PdAu2/PSi catalyst was associated with the major part of Pd in the catalyst being in the form of the bimetallic Pd-Au nanoparticles. Porous silicon was concluded to be a promising catalytic support for direct hydrogen peroxide synthesis due to its inertness with respect to undesirable side reactions, high thermal stability, and conductivity, possibility of safe operation at high temperatures and pressures and a well-established manufacturing process. PMID:29637068

Porous nanocrystalline silicon supported bimetallic Pd-Au catalysts: preparation, characterization and direct hydrogen peroxide synthesis

NASA Astrophysics Data System (ADS)

Potemkin, Dmitriy I.; Maslov, Dmitry K.; Loponov, Konstantin; Snytnikov, Pavel V.; Shubin, Yuri V.; Plyusnin, Pavel E.; Svintsitskiy, Dmitry A.; Sobyanin, Vladimir A.; Lapkin, Alexei A.

2018-03-01

Bimetallic Pd-Au catalysts were prepared on the porous nanocrystalline silicon (PSi) for the first time. The catalysts were tested in the reaction of direct hydrogen peroxide synthesis and characterised by standard structural and chemical techniques. It was shown that the Pd-Au/PSi catalyst prepared from conventional H2[PdCl4] and H[AuCl4] precursors contains monometallic Pd and a range of different Pd-Au alloy nanoparticles over the oxidized PSi surface. The PdAu2/PSi catalyst prepared from the [Pd(NH3)4][AuCl4]2 double complex salt single-source precursor predominantly contains bimetallic Pd-Au alloy nanoparticles. For both catalysts the surface of bimetallic nanoparticles is Pd-enriched and contains palladium in Pd0 and Pd2+ states. Among the catalysts studied, the PdAu2/PSi catalyst was the most active and selective in the direct H2O2 synthesis with H2O2 productivity of 0.5 at selectivity of 50 % and H2O2 concentration of 0.023 M in 0.03 M H2SO4-methanol solution after 5 h on stream at -10 °C and atmospheric pressure. This performance is due to high activity in the H2O2 synthesis reaction and low activities in the undesirable H2O2 decomposition and hydrogenation reactions. Good performance of the PdAu2/PSi catalyst was associated with the major part of Pd in the catalyst being in the form of the bimetallic Pd-Au nanoparticles. Porous silicon was concluded to be a promising catalytic support for direct hydrogen peroxide synthesis due to its inertness with respect to undesirable side reactions, high thermal stability and conductivity, possibility of safe operation at high temperatures and pressures and a well-established manufacturing process.

Coulomb-repulsion-assisted double ionization from doubly excited states of argon

NASA Astrophysics Data System (ADS)

Liao, Qing; Winney, Alexander H.; Lee, Suk Kyoung; Lin, Yun Fei; Adhikari, Pradip; Li, Wen

2017-08-01

We report a combined experimental and theoretical study to elucidate nonsequential double-ionization dynamics of argon atoms at laser intensities near and below the recollision-induced ionization threshold. Three-dimensional momentum measurements of two electrons arising from strong-field nonsequential double ionization are achieved with a custom-built electron-electron-ion coincidence apparatus, showing laser intensity-dependent Coulomb repulsion effect between the two outgoing electrons. Furthermore, a previously predicted feature of double ionization from doubly excited states is confirmed in the distributions of sum of two-electron momenta. A classical ensemble simulation suggests that Coulomb-repulsion-assisted double ionization from doubly excited states is at play at low laser intensity. This mechanism can explain the dependence of Coulomb repulsion effect on the laser intensity, as well as the transition from side-by-side to back-to-back dominant emission along the laser polarization direction.

Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagamatsu, Ken A., E-mail: knagamat@princeton.edu; Man, Gabriel; Jhaveri, Janam

2015-03-23

In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described.more » The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.« less

Slow infusion of low{\\hyphen}dose ketamine reduces bothersome side effects compared to IV push: a double{\\hyphen}blind, double dummy, randomized controlled trial.

PubMed

Clattenburg, Eben J; Hailozian, Christian; Haro, Daniel; Yoo, Tina; Flores, Stefan; Louie, Derex; Herring, Andrew A

2018-04-12

We compared the analgesic efficacy and incidence of side effects when low{\\hyphen}dose (0.3 mg{\\sol}kg) ketamine (LDK) is administered as a slow infusion (SI) over 15 minutes versus an intravenous push (IVP) over one minute. This was a prospective, randomized, double blind, double dummy, placebo{\\hyphen}controlled trial of adult ED patients presenting with moderate to severe pain (numerical rating score ≥ 5). Patients received ketamine 0.3mg{\\sol}kg administered either as a SI or IVP. Our primary outcome was the proportion of patients experiencing any psychoperceptual side effect over 60 minutes. A secondary outcome was incidence of moderate or greater psychoperceptual side effects. Additional outcomes included reduction in pain NRS scores at 60 minutes and percent maximum summed pain intensity difference ({\\percnt}SPID). Fifty{\\hyphen}nine participants completed the study. 86.2{\\percnt} of the IVP arm and 70.0{\\percnt} of the SI arm experienced any side effect (difference 16.2{\\percnt}, 95{\\percnt}CI {\\hyphen}5.4 - 37.8). We found a large reduction in moderate or greater psychoperceptual side effects with SI administration-75.9{\\percnt} reported moderate or greater side effects versus 43.4{\\percnt} in the SI arm (difference 32.5{\\percnt}, 95{\\percnt}CI 7.9 - 57.1). Additionally, the IVP arm experienced more hallucinations (n{\\equal}8, 27.6{\\percnt}) than the SI arm (SI n{\\equal}2, 6.7{\\percnt}; difference 20.9{\\percnt}, 95{\\percnt}CI 1.8 - 43.4). We found no significant differences in analgesic efficacy. At 60 minutes, the mean {\\percnt}SPID in the IVP and SI arms was 39.9{\\percnt} and 33.5{\\percnt}, respectively, with a difference of 6.5{\\percnt} (95{\\percnt}CI {\\hyphen}5.8 - 18.7). Most patients who are administered LDK experience a psychoperceptual side effect regardless of administration via SI or IVP. However, patients receiving LDK as a SI reported significantly fewer moderate or greater psychoperceptual side effects and hallucinations with equivalent analgesia. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

[CT measurement and clinical application of double-row suture anchor reconstruction for the treatment of Tossy type III acromioclavicular joint dislocation].

PubMed

Zhang, Chuan-Kai; Liu, Chen; Han, Bing; Feng, Hui; Chen, Qi-Zhong; Sunx, Sun Yi-Yan

2017-04-25

To study feasibility and reliability of reconstruction of the acromioclavicular ligament with double-row suture anchor for the treatment of acromioclavicular joint dislocation through coracoid coronal CT measurement, and to provide a new operation method for treating acromioclavicular joint dislocation. Total 60 healthy people received CT examination of shoulder joint, including 30 males and 30 females, ranging in age from 18 to 50 years old. The coronal width, thickness and 20 degree camber angle in the medial part of the toot of coronal were measured using CT scan. The results were applied to clinical treatment for 12 patients with acromioclavicular joint dislocation of Tossy III type. The width in the medial part of the root of the coracoid was(17.65±1.82) mm(left side) and (17.67±1.80) mm(right side) in males; (16.55±1.78) mm(left side) and (16.52±1.74) mm (right side) in females. The vertical thickness of the roots of the coracoid: (13.11±2.11) mm(left side) and (13.16±2.09) mm(right side) in males;(12.79±2.21) mm(left side) and (12.76±2.19) mm (right side) in females. The thickness of 20 degrees camber angle of the coracoid roots: (16.32±1.74) mm (left side) and (16.30±1.69) mm(right side) in males; (15.68±1.44) mm(left side) and (15.67±1.43) mm(right side) in females. Total 12 patients were treated with anchor nail with extraversion 20 degrees. The postoperative X-ray films showed bone anchors were located in the coracoid process, no bone splitting. Double-row suture anchor of 5 mm diameter nails can be placed into coracoid with extraversion 20 degrees, which is safety.

An Accelerated Recursive Doubling Algorithm for Block Tridiagonal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seal, Sudip K

2014-01-01

Block tridiagonal systems of linear equations arise in a wide variety of scientific and engineering applications. Recursive doubling algorithm is a well-known prefix computation-based numerical algorithm that requires O(M^3(N/P + log P)) work to compute the solution of a block tridiagonal system with N block rows and block size M on P processors. In real-world applications, solutions of tridiagonal systems are most often sought with multiple, often hundreds and thousands, of different right hand sides but with the same tridiagonal matrix. Here, we show that a recursive doubling algorithm is sub-optimal when computing solutions of block tridiagonal systems with multiplemore » right hand sides and present a novel algorithm, called the accelerated recursive doubling algorithm, that delivers O(R) improvement when solving block tridiagonal systems with R distinct right hand sides. Since R is typically about 100 1000, this improvement translates to very significant speedups in practice. Detailed complexity analyses of the new algorithm with empirical confirmation of runtime improvements are presented. To the best of our knowledge, this algorithm has not been reported before in the literature.« less

Nd:YAG-CO(2) double-pulse laser induced breakdown spectroscopy of organic films.

PubMed

Weidman, Matthew; Baudelet, Matthieu; Palanco, Santiago; Sigman, Michael; Dagdigian, Paul J; Richardson, Martin

2010-01-04

Laser-induced breakdown spectroscopy (LIBS) using double-pulse irradiation with Nd:YAG and CO(2) lasers was applied to the analysis of a polystyrene film on a silicon substrate. An enhanced emission signal, compared to single-pulse LIBS using a Nd:YAG laser, was observed from atomic carbon, as well as enhanced molecular emission from C(2) and CN. This double-pulse technique was further applied to 2,4,6-trinitrotoluene residues, and enhanced LIBS signals for both atomic carbon and molecular CN emission were observed; however, no molecular C(2) emission was detected.

Surface topography acquisition method for double-sided near-right-angle structured surfaces based on dual-probe wavelength scanning interferometry.

PubMed

Zhang, Tao; Gao, Feng; Jiang, Xiangqian

2017-10-02

This paper proposes an approach to measure double-sided near-right-angle structured surfaces based on dual-probe wavelength scanning interferometry (DPWSI). The principle and mathematical model is discussed and the measurement system is calibrated with a combination of standard step-height samples for both probes vertical calibrations and a specially designed calibration artefact for building up the space coordinate relationship of the dual-probe measurement system. The topography of the specially designed artefact is acquired by combining the measurement results with white light scanning interferometer (WLSI) and scanning electron microscope (SEM) for reference. The relative location of the two probes is then determined with 3D registration algorithm. Experimental validation of the approach is provided and the results show that the method is able to measure double-sided near-right-angle structured surfaces with nanometer vertical resolution and micrometer lateral resolution.

Biomechanical comparison of double-row versus transtendon single-row suture anchor technique for repair of the grade III partial articular-sided rotator cuff tears.

PubMed

Zhang, Chun-Gang; Zhao, De-Wei; Wang, Wei-Ming; Ren, Ming-Fa; Li, Rui-Xin; Yang, Sheng; Liu, Yu-Peng

2010-11-01

For partial-thickness tears of the rotator cuff, double-row fixation and transtendon single-row fixation restore insertion site anatomy, with excellent results. We compared the biomechanical properties of double-row and transtendon single-row suture anchor techniques for repair of grade III partial articular-sided rotator cuff tears. In 10 matched pairs of fresh-frozen sheep shoulders, the infraspinatus tendon from 1 shoulder was repaired with a double-row suture anchor technique. This comprised placement of 2 medial anchors with horizontal mattress sutures at an angle of ≤ 45° into the medial margin of the infraspinatus footprint, just lateral to the articular surface, and 2 lateral anchors with horizontal mattress sutures. Standardized, 50% partial, articular-sided infraspinatus lesions were created in the contralateral shoulder. The infraspinatus tendon from the contralateral shoulder was repaired using two anchors with transtendon single-row mattress sutures. Each specimen underwent cyclic loading from 10 to 100 N for 50 cycles, followed by tensile testing to failure. Gap formation and strain over the footprint area were measured using a motion capture system; stiffness and failure load were determined from testing data. Gap formation for the transtendon single-row repair was significantly smaller (P < 0.05) when compared with the double-row repair for the first cycle ((1.74 ± 0.38) mm vs. (2.86 ± 0.46) mm, respectively) and the last cycle ((3.77 ± 0.45) mm vs. (5.89 ± 0.61) mm, respectively). The strain over the footprint area for the transtendon single-row repair was significantly smaller (P < 0.05) when compared with the double-row repair. Also, it had a higher mean ultimate tensile load and stiffness. For grade III partial articular-sided rotator cuff tears, transtendon single-row fixation exhibited superior biomechanical properties when compared with double-row fixation.

Optimization of heat transfer during the directional solidification process of 1600 kg silicon feedstock

NASA Astrophysics Data System (ADS)

Hu, Chieh; Chen, Jyh Chen; Nguyen, Thi Hoai Thu; Hou, Zhi Zhong; Chen, Chun Hung; Huang, Yen Hao; Yang, Michael

2018-02-01

In this study, the power ratio between the top and side heaters and the moving velocity of the side insulation are designed to control the shape of the crystal-melt interface during the growth process of a 1600 kg multi-crystalline silicon ingot. The power ratio and insulation gap are adjusted to ensure solidification of the melt. To ensure that the crystal-melt interface is slightly convex in relation to the melt during the entire solidification process, the power ratio should be augmented gradually in the initial stages while being held to a constant value in the middle stages. Initially the gap between the side and the bottom insulation is kept small to reduce thermal stress inside the seed crystals. However, the growth rate will be slow in the early stages of the solidification process. Therefore, the movement of the side insulation is fast in the initial stages but slower in the middle stages. In the later stages, the side insulation gap is fixed. With these modifications, the convexity of the crystal-melt interface in relation to the melt can be maintained during the growth process with an approximately 41% reduction in the thermal stress inside the growing ingot and an 80% reduction in dislocation density along the center line of the ingot compared with the original case.

Exploring the Short-Channel Characteristics of Asymmetric Junctionless Double-Gate Silicon-on-Nothing MOSFET

NASA Astrophysics Data System (ADS)

Saha, Priyanka; Banerjee, Pritha; Dash, Dinesh Kumar; Sarkar, Subir Kumar

2018-03-01

This paper presents an analytical model of an asymmetric junctionless double-gate (asymmetric DGJL) silicon-on-nothing metal-oxide-semiconductor field-effect transistor (MOSFET). Solving the 2-D Poisson's equation, the expressions for center potential and threshold voltage are calculated. In addition, the response of the device toward the various short-channel effects like hot carrier effect, drain-induced barrier lowering and threshold voltage roll-off has also been examined along with subthreshold swing and drain current characteristics. Performance analysis of the present model is also demonstrated by comparing its short-channel behavior with conventional DGJL MOSFET. The effect of variation of the device features due to the variation of device parameters is also studied. The simulated results obtained using 2D device simulator, namely ATLAS, are in good agreement with the analytical results, hence validating our derived model.

Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

NASA Astrophysics Data System (ADS)

John, J.; Prajapati, V.; Vermang, B.; Lorenz, A.; Allebe, C.; Rothschild, A.; Tous, L.; Uruena, A.; Baert, K.; Poortmans, J.

2012-08-01

Bulk crystalline Silicon solar cells are covering more than 85% of the world's roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF) technology has been developed in the 90's and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell). While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si) in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

Foreign Object Damage in Disks of Two Gas-turbine-grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

2003-01-01

Foreign object damage (FOD) behavior of two commercial gas-turbine-grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through postimpact strength testing of disks impacted by steel ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (k(sub Ic)). The critical impact velocity V(sub c) for which the corresponding postimpact strength was the lowest was V(sub c) approximately equal to 440 and 300 m/s AS800 and SN282, respectively. A unique lower strength regime was typified for both silicon nitrides depending on impact velocity and was attributed to significant radial cracking. The damage generated by projectile impact was typically in the form of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike the thick (4 millimeters) flexure bar specimens used in our previous studies, the thin (2 millimeter) disk target specimen exhibited a unique back-side radial cracking on the reverse side just beneath the impact sites at and above impact velocities of 160 meters per second for SN282 and 220 meters per second AS800.

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

PubMed

Guan, Hang; Novack, Ari; Galfsky, Tal; Ma, Yangjin; Fathololoumi, Saeed; Horth, Alexandre; Huynh, Tam N; Roman, Jose; Shi, Ruizhi; Caverley, Michael; Liu, Yang; Baehr-Jones, Thomas; Bergman, Keren; Hochberg, Michael

2018-04-02

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si 3 N 4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

Low temperature spalling of silicon: A crack propagation study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bertoni, Mariana; Uberg Naerland, Tine; Stoddard, Nathan

2017-06-08

Spalling is a promising kerfless method for cutting thin silicon wafers while doubling the yield of a silicon ingot. The main obstacle in this technology is the high total thickness variation of the spalled wafers, often as high as 100% of the wafer thickness. It has been suggested before that a strong correlation exists between low crack velocities and a smooth surface, but this correlation has never been shown during a spalling process in silicon. The reason lies in the challenge associated to measuring such velocities. In this contribution, we present a new approach to assess, in real time, themore » crack velocity as it propagates during a low temperature spalling process. Understanding the relationship between crack velocity and surface roughness during spalling can pave the way to attain full control on the surface quality of the spalled wafer.« less

Fission product palladium-silicon carbide interaction in htgr fuel particles

NASA Astrophysics Data System (ADS)

Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

1990-07-01

Interaction of fission product palladium (Pd) with the silicon carbide (SiC) layer was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors (HTGR) with an optical microscope and electron probe microanalyzers. The SiC layers were attacked locally or the reaction product formed nodules at the attack site. Although the main element concerned with the reaction was palladium, rhodium and ruthenium were also detected at the corroded areas in some particles. Palladium was detected on both the hot and cold sides of the particles, but the corroded areas and the palladium accumulations were distributed particularly on the cold side of the particles. The observed Pd-SiC reaction depths were analyzed on the assumption that the release of palladium from the fuel kernel controls the whole Pd-SiC reaction.

Silver nanoparticles-coated glass frits for silicon solar cells

NASA Astrophysics Data System (ADS)

Li, Yingfen; Gan, Weiping; Li, Biyuan

2016-04-01

Silver nanoparticles-coated glass frit composite powders for silicon solar cells were prepared by electroless plating. Silver colloids were used as the activating agent of glass frits. The products were characterized by X-ray diffraction, scanning electron microscopy, and differential scanning calorimetry. The characterization results indicated that silver nanoparticles with the melting temperature of 838 °C were uniformly deposited on glass frit surface. The particle size of silver nanoparticles could be controlled by adjusting the [Ag(NH3)2]NO3 concentration. The as-prepared composite powders were applied in the front side metallization of silicon solar cells. Compared with those based on pure glass frits, the solar cells containing the composite powders had the denser silver electrodes and the better silver-silicon ohmic contacts. Furthermore, the photovoltaic performances of solar cells were improved after the electroless plating.

28. PENTHOUSE, ROOM 3005, LOOKING SOUTHWEST THROUGH DOUBLE DOORS. NORTH ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

28. PENTHOUSE, ROOM 3005, LOOKING SOUTHWEST THROUGH DOUBLE DOORS. NORTH SIDE OF BUILDING. - Hughes Aircraft Company, Processing & Electronics Building, 6775 Centinela Avenue, Los Angeles, Los Angeles County, CA

Gecko-inspired bidirectional double-sided adhesives.

PubMed

Wang, Zhengzhi; Gu, Ping; Wu, Xiaoping

2014-05-14

A new concept of gecko-inspired double-sided adhesives (DSAs) is presented. The DSAs, constructed by dual-angled (i.e. angled base and angled tip) micro-pillars on both sides of the backplane substrate, are fabricated by combinations of angled etching, mould replication, tip modification, and curing bonding. Two types of DSA, symmetric and antisymmetric (i.e. pillars are patterned symmetrically or antisymmetrically relative to the backplane), are fabricated and studied in comparison with the single-sided adhesive (SSA) counterparts through both non-conformal and conformal tests. Results indicate that the DSAs show controllable and bidirectional adhesion. Combination of the two pillar-layers can either amplify (for the antisymmetric DSA, providing a remarkable and durable adhesion capacity of 25.8 ± 2.8 N cm⁻² and a high anisotropy ratio of ∼8) or counteract (for the symmetric DSA, generating almost isotropic adhesion) the adhesion capacity and anisotropic level of one SSA (capacity of 16.2 ± 1.7 N cm⁻² and anisotropy ratio of ∼6). We demonstrate that these two DSAs can be utilized as a facile fastener for two individual objects and a small-scale delivery setup, respectively, complementing the functionality of the commonly studied SSA. As such, the double-sided patterning is believed to be a new branch in the further development of biomimetic dry adhesives.

Comparison of fiber lasers based on distributed side-coupled cladding-pumped fibers and double-cladding fibers.

PubMed

Huang, Zhihe; Cao, Jianqiu; Guo, Shaofeng; Chen, Jinbao; Xu, Xiaojun

2014-04-01

We compare both analytically and numerically the distributed side-coupled cladding-pumped (DSCCP) fiber lasers and double cladding fiber (DCF) lasers. We show that, through optimization of the coupling and absorbing coefficients, the optical-to-optical efficiency of DSCCP fiber lasers can be made as high as that of DCF lasers. At the same time, DSCCP fiber lasers are better than the DCF lasers in terms of thermal management.

The dominant role of side chains in supramolecular double helical organisation in synthetic tripeptides

NASA Astrophysics Data System (ADS)

Sharma, Ankita; Tiwari, Priyanka; Dutt Konar, Anita

2018-06-01

Peptide self-assembled nanostructures have attracted attention recently owing to their promising applications in diversified avenues. To validate the importance of sidechains in supramolecular architectural stabilization, herein this report describes the self-assembly propensities involving weak interactions in a series of model tripeptides Boc-Xaa-Aib-Yaa-OMe I-IV, (where Xaa = 4-F-Phe/NMeSer/Ile & Yaa = Tyr in peptide I-III respectively and Xaa = 4-F-Phe & Yaa = Ile in peptide IV) differing in terminal side chains. The solid state structural analysis reveals that tripeptide (I) displays supramolecular preference for double helical architecture. However, when slight modification has been introduced in the N-terminal side chains disfavour the double helical organisation (Peptide II and III). Indeed the peptides display sheet like ensemble within the framework. Besides replacement of C-terminal Tyr by Ile in peptide I even do not promote the architecture, emphasizing the dominant role of balance of side chains in stabilizing double helical organisation. The CD measurements, concentration dependant studies, NMR titrations and ROESY spectra are well in agreement with the solid state conformational investigation. Moreover the morphological experiments utilizing FE-SEM, support the heterogeneity present in the peptides. Thus this work may not only hold future promise in understanding the structure and function of neurodegenerative diseases but also assist in rational design of protein modification in biologically active peptides.

Reconstruction of the gastric passage by a side-to-side gastrogastrostomy after failed vertical-banded gastroplasty: a case report

PubMed Central

Soll, Christopher; Müller, Markus K; Wildi, Stefan; Clavien, Pierre-Alain; Weber, Markus

2008-01-01

Introduction Vertical-banded gastroplasty, a technique that is commonly performed in the treatment of morbid obesity, represents a nonadjustable restrictive procedure which reduces the volume of the upper stomach by a vertical stapler line. In addition, a textile or silicone band restricts food passage through the stomach. Case presentation A 71-year-old woman presented with a severe gastric stenosis 11 years after vertical gastroplasty. We describe a side-to-side gastrogastrostomy as a safe surgical procedure to restore the physiological gastric passage after failed vertical-banded gastroplasty. Conclusion Occasionally, restrictive procedures for morbid obesity cannot be converted into an alternative bariatric procedure to maintain weight control. This report demonstrates that a side-to-side gastrogastrostomy is a feasible and safe procedure. PMID:18513454

Application of real-time radiation dosimetry using a new silicon LET sensor

NASA Technical Reports Server (NTRS)

Doke, T.; Hayashi, T.; Kikuchi, J.; Nagaoka, S.; Nakano, T.; Sakaguchi, T.; Terasawa, K.; Badhwar, G. D.

1999-01-01

A new type of real-time radiation monitoring device, RRMD-III, consisting of three double-sided silicon strip detectors (DSSDs), has been developed and tested on-board the Space Shuttle mission STS-84. The test succeeded in measuring the linear energy transfer (LET) distribution over the range of 0.2 keV/micrometer to 600 keV/micrometer for 178 h. The Shuttle cruised at an altitude of 300 to 400 km and an inclination angle of 51.6 degrees for 221.3 h, which is equivalent to the International Space Station orbit. The LET distribution obtained for particles was investigated by separating it into galactic cosmic ray (GCR) particles and trapped particles in the South Atlantic Anomaly (SAA) region. The result shows that the contribution in dose-equivalent due to GCR particles is almost equal to that from trapped particles. The total absorbed dose rate during the mission was 0.611 mGy/day; the effective quality factor, 1.64; and the dose equivalent rate, 0.998 mSv/day. The average absorbed dose rates are 0.158 mGy/min for GCR particles and 3.67 mGy/min for trapped particles. The effective quality factors are 2.48 for GCR particles and 1.19 for trapped particles. The absorbed doses obtained by the RRMD-III and a conventional method using TLD (Mg(2)SiO(4)), which was placed around the RRMD-III were compared. It was found that the TLDs showed a lower efficiency, just 58% of absorbed dose registered by the RRMD-III.

Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells.

PubMed

Zhou, Suqiong; Yang, Zhenhai; Gao, Pingqi; Li, Xiaofeng; Yang, Xi; Wang, Dan; He, Jian; Ying, Zhiqin; Ye, Jichun

2016-12-01

Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells.

A compact and modular x- and gamma-ray detector with a CsI scintillator and double-readout Silicon Drift Detectors

NASA Astrophysics Data System (ADS)

Campana, R.; Fuschino, F.; Labanti, C.; Marisaldi, M.; Amati, L.; Fiorini, M.; Uslenghi, M.; Baldazzi, G.; Bellutti, P.; Evangelista, Y.; Elmi, I.; Feroci, M.; Ficorella, F.; Frontera, F.; Picciotto, A.; Piemonte, C.; Rachevski, A.; Rashevskaya, I.; Rignanese, L. P.; Vacchi, A.; Zampa, G.; Zampa, N.; Zorzi, N.

2016-07-01

A future compact and modular X and gamma-ray spectrometer (XGS) has been designed and a series of proto- types have been developed and tested. The experiment envisages the use of CsI scintillator bars read out at both ends by single-cell 25 mm2 Silicon Drift Detectors. Digital algorithms are used to discriminate between events absorbed in the Silicon layer (lower energy X rays) and events absorbed in the scintillator crystal (higher energy X rays and -rays). The prototype characterization is shown and the modular design for future experiments with possible astrophysical applications (e.g. for the THESEUS mission proposed for the ESA M5 call) are discussed.

Dynamics of the formation of laser-induced periodic surface structures (LIPSS) upon femtosecond two-color double-pulse irradiation of metals, semiconductors, and dielectrics

NASA Astrophysics Data System (ADS)

Höhm, S.; Herzlieb, M.; Rosenfeld, A.; Krüger, J.; Bonse, J.

2016-06-01

In order to address the dynamics and physical mechanisms of LIPSS formation for three different classes of materials (metals, semiconductors, and dielectrics), two-color double-fs-pulse experiments were performed on Titanium, Silicon and Fused Silica. For that purpose a Mach-Zehnder interferometer generated polarization controlled (parallel or cross-polarized) double-pulse sequences at 400 nm and 800 nm wavelength, with inter-pulse delays up to a few picoseconds. Multiple of these two-color double-pulse sequences were collinearly focused by a spherical mirror to the sample surfaces. The fluence of each individual pulse (400 nm and 800 nm) was always kept below its respective ablation threshold and only the joint action of both pulses lead to the formation of LIPSS. Their resulting characteristics (periods, areas) were analyzed by scanning electron microscopy. The periods along with the LIPSS orientation allow a clear identification of the pulse which dominates the energy coupling to the material. For strong absorbing materials (Silicon, Titanium), a wavelength-dependent plasmonic mechanism can explain the delay-dependence of the LIPSS. In contrast, for dielectrics (Fused Silica) the first pulse always dominates the energy deposition and LIPSS orientation, supporting a non-plasmonic formation scenario. For all materials, these two-color experiments confirm the importance of the ultrafast energy deposition stage for LIPSS formation.

Plan for Subdividing Genesis Mission Diamond-on-Silicon 60000 Solar Wind Collector

NASA Technical Reports Server (NTRS)

Burkett, Patti J.; Allton, J. A.; Clemett, S. J.; Gonzales, C. P.; Lauer, H. V., Jr.; Nakamura-Messenger, K.; Rodriquez, M. C.; See, T. H.; Sutter, B.

2013-01-01

NASA's Genesis solar wind sample return mission experienced an off nominal landing resulting in broken, albeit useful collectors. Sample 60000 from the collector is comprised of diamond-like-carbon film on a float zone (FZ) silicon wafer substrate Diamond-on-Silicon (DOS), and is highly prized for its higher concentration of solar wind (SW) atoms. A team of scientist at the Johnson Space Center was charged with determining the best, nondestructive and noncontaminating method to subdivide the specimen that would result in a 1 sq. cm subsample for allocation and analysis. Previous work included imaging of the SW side of 60000, identifying the crystallographic orientation of adjacent fragments, and devising an initial cutting plan.

MEMS for vibration energy harvesting

NASA Astrophysics Data System (ADS)

Li, Lin; Zhang, Yangjian; San, Haisheng; Guo, Yinbiao; Chen, Xuyuan

2008-03-01

In this paper, a capacitive vibration-to-electrical energy harvester was designed. An integrated process flow for fabricating the designed capacitive harvester is presented. For overcoming the disadvantage of depending on external power source in capacitive energy harvester, two parallel electrodes with different work functions are used as the two electrodes of the capacitor to generate a build-in voltage for initially charging the capacitor. The device is a sandwich structure of silicon layer in two glass layers with area of about 1 cm2. The silicon structure is fabricated by using silicon-on-insulator (SOI) wafer. The glass wafers are anodic bonded on to both sides of the SOI wafer to create a vacuum sealed package.

Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

2010-01-01

This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

An unusual course after injection of industrial silicone for penile augmentation.

PubMed

Shin, Yu Seob; You, Jae Hyung; Choi, Hwang; Zhang, Li Tao; Zhao, Chen; Choi, In Sung; Park, Jong Kwan

2015-01-01

A 48-year-old male patient had an injection of industrial silicone under the penile skin for augmentation by non-medical practitioners a week before. There was complete necrosis of the dorsal part of the penile skin and soft tissue. In a penile magnetic resonance image, big masses of silicone under the penile skin were found and a part of the silicone was partially exposed. Debridement of the necrotic tissue was done. As the right side of the tunica albuginea was thin-walled, a silicone-induced infection developed. Because of this, the wet dressing was done daily without closing the wound for the next 23 days. Finally, both scrotal skins were drawn and sutured to the dorsal glandular skin after the total penile skin was completely removed and sutured with T-style anastomosis. The ventral flap was anastomosed to the ventral glandular skin with the end-to-end technique with inverted V incision at 1 cm proximal from the sutured margin. Flaps survived completely without skin necrosis or dehiscence.

Compact GaSb/silicon-on-insulator 2.0x μm widely tunable external cavity lasers.

PubMed

Wang, Ruijun; Malik, Aditya; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Roelkens, Gunther

2016-12-12

2.0x µm widely tunable external cavity lasers realized by combining a GaSb gain chip with a silicon photonics waveguide circuit for wavelength selection are demonstrated. Wavelength tuning over 58 nm from 2.01 to 2.07 µm is demonstrated. In the silicon photonic integrated circuit, laser feedback is realized by using a silicon Bragg grating and continuous tuning is realized by using two thermally tuned silicon microring resonators (MRRs) and a phase section. The uncooled laser has maximum output power of 7.5 mW and threshold current density of 0.8 kA/cm². The effect of the coupling gap of the MRRs on tunable laser performance is experimentally assessed. A side mode suppression ratio better than 52 dB over the full tuning range and in the optimum operation point of more than 60 dB is achieved for the laser with weakly coupled MRRs.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

PubMed

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

Barium Transport Process in Impregnated Dispenser Cathodes.

DTIC Science & Technology

1982-01-25

experiments were carried out on pure tungsten. The tung- sten was either in the form of thin foils (6 mm on a side) or single crystal disks (6 mm in...temperature reveal the presence of car- bon, silicon , calcium, and nitrogen impurities, with only trace amounts (ɚ%) of calcium and nitrogen. Carbon is not...expected to be present at diffusion temperatures but forms as an overlayer only upon cooling [6]. We hope to re- duce silicon impurity levels by use of

Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

NASA Astrophysics Data System (ADS)

Gao, J.; Kang, L.; Wong, H. Y.; Cheung, Y. L.; Yang, J.

Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu2CuO4/YSZ (yttrium-stabilized ZrO2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu2CuO4/YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

NASA Astrophysics Data System (ADS)

Yan-Hui, Zhang; Jie, Wei; Chao, Yin; Qiao, Tan; Jian-Ping, Liu; Peng-Cheng, Li; Xiao-Rong, Luo

2016-02-01

A uniform doping ultra-thin silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor (LDMOS) with low specific on-resistance (Ron,sp) and high breakdown voltage (BV) is proposed and its mechanism is investigated. The proposed LDMOS features an accumulation-mode extended gate (AG) and back-side etching (BE). The extended gate consists of a P- region and two diodes in series. In the on-state with VGD > 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The Ron,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the Ron,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping (VLD) and the “hot-spot” caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the Ron,sp by 70.2% and increases the BV from 776 V to 818 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079).

Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

DOEpatents

Haller, Eugene E.; Brundermann, Erik

2000-01-01

A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

Polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating

NASA Astrophysics Data System (ADS)

Hohne, Andrew J.; Moon, Benjamin; Baumbauer, Carol L.; Gray, Tristan; Dilts, James; Shaw, Joseph A.; Dickensheets, David L.; Nakagawa, Wataru

2017-08-01

We present the design, fabrication, and characterization of a polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating for use in polarimetric imaging. Gold nanowires were deposited via physical vapor deposition (PVD) onto a silicon surface relief grating that was patterned using electron beam lithography (EBL) and fabricated using standard silicon processing techniques. Optical characterization with a broad-spectrum tungsten halogen light source and a grating spectrometer showed normalized peak TM transmission of 53% with a full-width at half-maximum (FWHM) of 122 nm, which was consistent with rigorous coupled-wave analysis (RCWA) simulations. Simulation results suggested that device operation relied on suppression of the TM transmission caused by surface plasmon polariton (SPP) excitation at the gold-silicon interface and an increase in TM transmission caused by a Fabry-Perot (FP) resonance in the cavity between the gratings. TE rejection occurred at the initial air/gold interface. We also present simulation results of an improved design based on a two-dielectric grating where two different SPP resonances allowed us to improve the shape of the passband by suppressing the side lobes. This newer design resulted in improved side-band performance and increased peak TM transmission.

Intraoperative Comparison of Anatomical versus Round Implants in Breast Augmentation: A Randomized Controlled Trial.

PubMed

Hidalgo, David A; Weinstein, Andrew L

2017-03-01

The purpose of this randomized controlled trial was to determine whether anatomical implants are aesthetically superior to round implants in breast augmentation. Seventy-five patients undergoing primary breast augmentation had a round silicone implant of optimal volume, projection, and diameter placed in one breast and an anatomical silicone device of similar volume and optimal shape placed in the other. After intraoperative photographs were taken, the anatomical device was replaced by a round implant to complete the procedure. A survey designed to measure breast aesthetics was administered to 10 plastic surgeon and 10 lay reviewers for blind evaluation of the 75 cases. No observable difference in breast aesthetics between anatomical and round implants was reported by plastic surgeons in 43.6 percent or by lay individuals in 29.2 percent of cases. When a difference was perceived, neither plastic surgeons nor lay individuals preferred the anatomical side more often than the round side. Plastic surgeons judged the anatomical side superior in 51.1 percent of cases and the round side superior in 48.9 percent of cases (p = 0.496). Lay individuals judged the anatomical side superior in 46.7 percent of cases and the round side superior in 53.3 percent (p = 0.140). Plastic surgeons identified implant shape correctly in only 26.5 percent of cases. This study provides high-level evidence supporting no aesthetic superiority of anatomical over round implants. Given that anatomical implants have important and unique disadvantages, a lack of proven aesthetic superiority argues against their continued use in breast augmentation. Therapeutic, I.

Advanced Polymer Network Structures

DTIC Science & Technology

2016-02-01

double networks in a single step was identified from coarse-grained molecular dynamics simulations of polymer solvents bearing rigid side chains dissolved...in a polymer network. Coarse-grained molecular dynamics simulations also explored the mechanical behavior of traditional double networks and...DRI), polymer networks, polymer gels, molecular dynamics simulations , double networks 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

PubMed

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short-term exposure and emptying did not significantly influence the silicone oil layer at the investigated silicone level. It thus appears reasonable to use this approach to characterize silicone oil layers in filled syringes over time. The developed method characterizes non-destructively the layer thickness and distribution of silicone oil in empty syringes and provides fast access to reliable results. The gained information can be further used to support optimization of siliconization processes and increase the understanding of syringe functionality. LAY ABSTRACT: Silicone oil layers as lubricant are required to ensure functionality of prefilled syringes. Methods evaluating these layers are limited, and systematic evaluation is missing. The aim of this study was to develop and assess white light interferometry as an analytical method to characterize sprayed-on silicone oil layers in 1 mL prefilled syringes. White light interferometry showed a good accuracy (93-99%) as well as instrument and analyst precision (0.5% and 4.1%, respectively). Different applied instrument parameters had no significant impact on the measured layer thickness. The obtained values from white light interferometry applying a fully developed method concurred with orthogonal results from 3D-laser scanning microscopy and combined white light and laser interferometry. The average layer thicknesses in two investigated syringe lots gradually decreased from 170-190 nm at the flange to 100-90 nm at the needle side. The silicone layers were homogeneously distributed over the syringe barrel circumference (110-135 nm) for both lots. Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. Syringe filling with a surrogate solution, including short-term exposure and emptying, did not significantly affect the silicone oil layer. The developed, non-destructive method provided reliable results to characterize the silicone oil layer thickness and distribution in empty siliconized syringes. This information can be further used to support optimization of siliconization processes and increase understanding of syringe functionality. © PDA, Inc. 2018.

Multifunctionality in coating films including Nb-doped TiO2 and Cs x WO3: near infrared shielding and photocatalytic properties.

PubMed

Asakura, Yusuke; Anada, Yuto; Hamanaka, Ryo; Sato, Tsugio; Katsumata, Ken-Ichi; Wu, Xiaoyong; Yin, Shu

2018-06-01

Various types of coating films were obtained from hydrothermally synthesized Nb-doped TiO 2 (NTO) and Cs x WO 3 (CWO) nanoparticles. The coating films possessed multifunctionality including near infrared (NIR) absorption and photocatalysis abilities. The NTO and CWO nanoparticles were synthesized by a unique solvothermal reaction in which water induced by an esterification reaction between alcohol and carboxylic acid can act as a hydrolyzing agent for metal precursors. NTO was synthesized by the unique solvothermal reaction for the first time. The reaction accompanied by the reduction of Ti 4+ to Ti 3+ led to the formation of nanoparticles with both NIR absorption and photocatalytic properties. The effect of the ethanol-acetic acid ratio on the morphology of the obtained NTO was investigated, and the larger amount of acetic acid led to a larger nanoparticle size, indicating the size controllability. The two types of coating film, including CWO and NTO nanoparticles, were obtained for comparison: (1) coexistent coating film: one side of the quartz glass was coated with a dispersion, including both CWO and NTO nanoparticles, and (2) double-sided coating film: a quartz glass coated with a CWO dispersion on one side and an NTO dispersion on the other side. The double-sided coating led to higher multifunctionality. Furthermore, the optimized condition for the double-sided coating was investigated by using various NTO particles obtained using different ethanol-acetic acid ratios.

Multifunctionality in coating films including Nb-doped TiO2 and Cs x WO3: near infrared shielding and photocatalytic properties

NASA Astrophysics Data System (ADS)

Asakura, Yusuke; Anada, Yuto; Hamanaka, Ryo; Sato, Tsugio; Katsumata, Ken-ichi; Wu, Xiaoyong; Yin, Shu

2018-06-01

Various types of coating films were obtained from hydrothermally synthesized Nb-doped TiO2 (NTO) and Cs x WO3 (CWO) nanoparticles. The coating films possessed multifunctionality including near infrared (NIR) absorption and photocatalysis abilities. The NTO and CWO nanoparticles were synthesized by a unique solvothermal reaction in which water induced by an esterification reaction between alcohol and carboxylic acid can act as a hydrolyzing agent for metal precursors. NTO was synthesized by the unique solvothermal reaction for the first time. The reaction accompanied by the reduction of Ti4+ to Ti3+ led to the formation of nanoparticles with both NIR absorption and photocatalytic properties. The effect of the ethanol–acetic acid ratio on the morphology of the obtained NTO was investigated, and the larger amount of acetic acid led to a larger nanoparticle size, indicating the size controllability. The two types of coating film, including CWO and NTO nanoparticles, were obtained for comparison: (1) coexistent coating film: one side of the quartz glass was coated with a dispersion, including both CWO and NTO nanoparticles, and (2) double-sided coating film: a quartz glass coated with a CWO dispersion on one side and an NTO dispersion on the other side. The double-sided coating led to higher multifunctionality. Furthermore, the optimized condition for the double-sided coating was investigated by using various NTO particles obtained using different ethanol–acetic acid ratios.

Double Super-Exchange in Silicon Quantum Dots Connected by Short-Bridged Networks

NASA Astrophysics Data System (ADS)

Li, Huashan; Wu, Zhigang; Lusk, Mark

2013-03-01

Silicon quantum dots (QDs) with diameters in the range of 1-2 nm are attractive for photovoltaic applications. They absorb photons more readily, transport excitons with greater efficiency, and show greater promise in multiple-exciton generation and hot carrier collection paradigms. However, their high excitonic binding energy makes it difficult to dissociate excitons into separate charge carriers. One possible remedy is to create dot assemblies in which a second material creates a Type-II heterojunction with the dot so that exciton dissociation occurs locally. This talk will focus on such a Type-II heterojunction paradigm in which QDs are connected via covalently bonded, short-bridge molecules. For such interpenetrating networks of dots and molecules, our first principles computational investigation shows that it is possible to rapidly and efficiently separate electrons to QDs and holes to bridge units. The bridge network serves as an efficient mediator of electron superexchange between QDs while the dots themselves play the complimentary role of efficient hole superexchange mediators. Dissociation, photoluminescence and carrier transport rates will be presented for bridge networks of silicon QDs that exhibit such double superexchange. This material is based upon work supported by the Renewable Energy Materials Research Science and Engineering Center (REMRSEC) under Grant No. DMR-0820518 and Golden Energy Computing Organization (GECO).

Real-time monitoring of enzyme activity in a mesoporous silicon double layer

PubMed Central

Orosco, Manuel M.; Pacholski, Claudia; Sailor, Michael J.

2009-01-01

A double layer mesoporous silicon with different pore sizes functions as a nano-reactor that can isolate, filter and quantify the kinetics of enzyme reactions in real-time by optical reflectivity. This tiny reactor may be used to rapidly characterize a variety of isolated enzymes in a label-free manner. Activity of certain protease enzymes is often an indicator of disease states such as cancer1,2, stroke2, and neurodegeneracy3, and thus, there is a need for rapid assays that can characterize the kinetics and substrate specificity of enzymatic reactions. Nanostructured membranes can efficiently separate biomolecules4 but coupling a sensitive detection method remains difficult. Here we report a single mesoporous nano-reactor that can isolate and quantify in real-time the reaction products of proteases. The reactor consists of two layers of porous films electrochemically prepared from crystalline silicon. The upper layer with large pore sizes traps the protease enzymes and acts as the reactor while the lower layer with smaller pore sizes excludes the large proteins and captures the reaction products. Infiltration of the digested fragments into the lower layer produces a measurable change in optical reflectivity and this allows label-free quantification of enzyme kinetics in real-time within a volume of approximately 5 nanoliters. PMID:19350037

All-silicon tandem solar cells: Practical limits for energy conversion and possible routes for improvement

NASA Astrophysics Data System (ADS)

Jia, Xuguang; Puthen-Veettil, Binesh; Xia, Hongze; Yang, Terry Chien-Jen; Lin, Ziyun; Zhang, Tian; Wu, Lingfeng; Nomoto, Keita; Conibeer, Gavin; Perez-Wurfl, Ivan

2016-06-01

Silicon nanocrystals (Si NCs) embedded in a dielectric matrix is regarded as one of the most promising materials for the third generation photovoltaics, owing to their tunable bandgap that allows fabrication of optimized tandem devices. Previous work has demonstrated fabrication of Si NCs based tandem solar cells by sputter-annealing of thin multi-layers of silicon rich oxide and SiO2. However, these device efficiencies were much lower than expected given that their theoretical values are much higher. Thus, it is necessary to understand the practical conversion efficiency limits for these devices. In this article, practical efficiency limits of Si NC based double junction tandem cells determined by fundamental material properties such as minority carrier, mobility, and lifetime are investigated. The practical conversion efficiency limits for these devices are significantly different from the reported efficiency limits which use Shockley-Queisser assumptions. Results show that the practical efficiency limit of a double junction cell (1.6 eV Si NC top cell and a 25% efficient c-Si PERL cell as the bottom cell) is 32%. Based on these results suggestions for improvement to the performance of Si nanocrystal based tandem solar cells in terms of the different parameters that were simulated are presented.

Double-plasma enhanced carbon shield for spatial/interfacial controlled electrodes in lithium ion batteries via micro-sized silicon from wafer waste

NASA Astrophysics Data System (ADS)

Chen, Bing-Hong; Chuang, Shang-I.; Duh, Jenq-Gong

2016-11-01

Using spatial and interfacial control, the micro-sized silicon waste from wafer slurry could greatly increase its retention potential as a green resource for silicon-based anode in lithium ion batteries. Through step by step spatial and interfacial control for electrode, the cyclability of recycled waste gains potential performance from its original poor retention property. In the stages of spatial control, the electrode stabilizers of active, inactive and conductive additives were mixed into slurries for maintaining architecture and conductivity of electrode. In addition, a fusion electrode modification of interfacial control combines electrolyte additive, technique of double-plasma enhanced carbon shield (D-PECS) to convert the chemical bond states and to alter the formation of solid electrolyte interphases (SEIs) in the first cycle. The depth profiles of chemical composition from external into internal electrode illustrate that the fusion electrode modification not only forms a boundary to balance the interface between internal and external electrodes but also stabilizes the SEIs formation and soothe the expansion of micro-sized electrode. Through these effect approaches, the performance of micro-sized Si waste electrode can be boosted from its serious capacity degradation to potential retention (200 cycles, 1100 mAh/g) and better meet the requirements for facile and cost-effective in industrial production.

Feasibility study of SiGHT: a novel ultra low background photosensor for low temperature operation

DOE PAGES

Wang, Y.; Fan, A.; Fiorillo, G.; ...

2017-02-27

Rare event search experiments, such as those searching for dark matter and observations of neutrinoless double beta decay, require ultra low levels of radioactive background for unmistakable identification. In order to reduce the radioactive background of detectors used in these types of event searches, low background photosensors are required, as the physical size of these detectors become increasing larger, and hence the number of such photosensors used also increases rapidly. Considering that most dark matter and neutrinoless double beta decay experiments are turning towards using noble liquids as the target choice, liquid xenon and liquid argon for instance, photosensors thatmore » can work well at cryogenic temperatures are required, 165 K and 87 K for liquid xenon and liquid argon, respectively. The Silicon Geiger Hybrid Tube (SiGHT) is a novel photosensor designed specifically for use in ultra low background experiments operating at cryogenic temperatures. It is based on the proven photocathode plus silicon photomultiplier (SiPM) hybrid technology and consists of very few other, but also ultra radio-pure, materials like fused silica and silicon for the SiPM. Lastly, the introduction of the SiGHT concept, as well as a feasibility study for its production, is reported in this article.« less

SOI layout decomposition for double patterning lithography on high-performance computer platforms

NASA Astrophysics Data System (ADS)

Verstov, Vladimir; Zinchenko, Lyudmila; Makarchuk, Vladimir

2014-12-01

In the paper silicon on insulator layout decomposition algorithms for the double patterning lithography on high performance computing platforms are discussed. Our approach is based on the use of a contradiction graph and a modified concurrent breadth-first search algorithm. We evaluate our technique on 45 nm Nangate Open Cell Library including non-Manhattan geometry. Experimental results show that our soft computing algorithms decompose layout successfully and a minimal distance between polygons in layout is increased.

Studies of Silicon-Refractory Metal Interfaces: Photoemission Study of Interface Formation and Compound Nucleation.

DTIC Science & Technology

1984-10-29

Photoelectron energy analysis was done with Si s states 10--14 eV below E,. For CoSi2 and NiSi2, a commercial double-pass electron energy analyzer . The...Collaborative studies with theorists gave rise to modeling ,f interfaces and calculation of electronic energy states for ordered silicides. (i, ,I... analyzed by a double-pass cylindrical mirror energy A. There is no evidence of Cr outdiffusion into the Au analyzer , and the overall resolution

Novel silicon-carbon fullerene-like nanostructures: an Ab initio study on the stability of Si54C6 and Si60C6 clusters.

PubMed

Srinivasan, Aravind; Ray, Asok K

2006-01-01

Silicon fullerene like nanostructures with six carbon atoms on the surface of Si60 cages by substitution, as well as inside the cage at various symmetry orientations have been studied within the generalized gradient approximation to density functional theory. Full geometry optimizations have been performed without any symmetry constraints using the Gaussian 03 suite of programs and the LANL2DZ basis set. Thus, for the silicon atom, the Hay-Wadt pseudopotential with the associated basis set are used for the core electrons and the valence electrons, respectively. For the carbon atom, the Dunning/Huzinaga double zeta basis set is employed. Electronic and geometric properties of the nanostructures are presented and discussed in detail. It was found that optimized silicon-carbon fullerene like nanostructures have increased stability compared to bare Si60 cage and the stability depends on the orientation of carbon atoms, as well as on the nature of bonding between silicon and carbon atoms and also on the carbon-carbon bonding.

Microstructural evolution of laser-exposed silicon targets in SF6 atmospheres

NASA Astrophysics Data System (ADS)

Fowlkes, J. D.; Pedraza, A. J.; Lowndes, D. H.

2000-09-01

The microstructures formed at the surface of silicon during pulsed-laser irradiation in SF6-rich atmospheres consist of an array of microholes surrounded by microcones. It is shown that there is a dynamic interplay between the formation of microholes and microcones. Fluorine produced by the laser-induced decomposition of SF6 is most likely responsible for the etching/ablation process. It is proposed that silicon-rich molecules and clusters that form in and are ejected from the continually deepening microholes sustain the axial and lateral growth of the microcones. The laser-melted layer at the tip and sides of the cones efficiently collects the silicon-rich products formed upon ablation. The total and partial pressures of SF6 in the chamber play a major role in cone development, a clear indication that it is the laser-generated plasma that controls the growth of these cones.

Linear and passive silicon optical isolator

PubMed Central

Wang, Chen; Zhong, Xiao-Lan; Li, Zhi-Yuan

2012-01-01

On-chip optical isolation plays a key role in optical communications and computing based on silicon integrated photonic structures and has attracted great attentions for long years. Recently there have appeared hot controversies upon whether isolation of light can be realized via linear and passive photonic structures. Here we demonstrate optical isolation of infrared light in purely linear and passive silicon photonic structures. Both numerical simulations and experimental measurements show that the round-trip transmissivity of in-plane infrared light across a silicon photonic crystal slab heterojunction diode could be two orders of magnitudes smaller than the forward transmissivity at around 1,550 nm with a bandwidth of about 50 nm, indicating good performance of optical isolation. The occurrence of in-plane light isolation is attributed to the information dissipation due to off-plane and side-way scattering and selective modal conversion in the multiple-channel structure and has no conflict with the reciprocal principle. PMID:22993699

Demonstration of the feasibility of automated silicon solar cell fabrication

NASA Technical Reports Server (NTRS)

Taylor, W. E.; Schwartz, F. M.

1975-01-01

A study effort was undertaken to determine the process, steps and design requirements of an automated silicon solar cell production facility. Identification of the key process steps was made and a laboratory model was conceptually designed to demonstrate the feasibility of automating the silicon solar cell fabrication process. A detailed laboratory model was designed to demonstrate those functions most critical to the question of solar cell fabrication process automating feasibility. The study and conceptual design have established the technical feasibility of automating the solar cell manufacturing process to produce low cost solar cells with improved performance. Estimates predict an automated process throughput of 21,973 kilograms of silicon a year on a three shift 49-week basis, producing 4,747,000 hexagonal cells (38mm/side), a total of 3,373 kilowatts at an estimated manufacturing cost of $0.866 per cell or $1.22 per watt.

Upgraded metallurgical-grade silicon solar cells with efficiency above 20%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, P.; Rougieux, F. E.; Samundsett, C.

We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presencemore » of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.« less

Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

NASA Astrophysics Data System (ADS)

Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

2013-04-01

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

Tibial rotation under combined in vivo loading after single- and double-bundle anterior cruciate ligament reconstruction.

PubMed

Tsarouhas, Alexander; Iosifidis, Michael; Spyropoulos, Giannis; Kotzamitelos, Dimitrios; Tsatalas, Themistoklis; Giakas, Giannis

2011-12-01

To evaluate in vivo the differences in tibial rotation between single- and double-bundle anterior cruciate ligament (ACL)-reconstructed knees under combined loading conditions. An 8-camera optoelectronic system and a force plate were used to collect kinematic and kinetic data from 14 patients with double-bundle ACL reconstruction, 14 patients with single-bundle reconstruction, 12 ACL-deficient subjects, and 12 healthy control individuals while performing 2 tasks. The first included walking, 60° pivoting, and stair ascending, and the second included stair descending, 60° pivoting, and walking. The 2 variables evaluated were the maximum range of internal-external tibial rotation and the maximum knee rotational moment. Tibial rotation angles were not significantly different across the 4 groups (P = .331 and P = .851, respectively) or when side-to-side differences were compared within groups (P = .216 and P = .371, respectively) for the ascending and descending maneuvers, nor were rotational moments among the 4 groups (P = .418 and P = .290, respectively). Similarly, for the descending maneuver, the rotational moments were not significantly different between sides (P = .192). However, for the ascending maneuver, rotational moments of the affected sides were significantly lower by 20.5% and 18.7% compared with their intact counterparts in the single-bundle (P = .015) and double-bundle (P = .05) groups, respectively. High-intensity activities combining stair ascending or descending with pivoting produce similar tibial rotation in single- and double-bundle ACL-reconstructed patients. During such maneuvers, the reconstructed knee may be subjected to significantly lower rotational loads compared with the intact knee. Level III, retrospective comparative study. Copyright © 2011 Arthroscopy Association of North America. Published by Elsevier Inc. All rights reserved.

Review of nanostructured devices for thermoelectric applications

PubMed Central

2014-01-01

Summary A big research effort is currently dedicated to the development of thermoelectric devices capable of a direct thermal-to-electrical energy conversion, aiming at efficiencies as high as possible. These devices are very attractive for many applications in the fields of energy recovery and green energy harvesting. In this paper, after a quick summary of the fundamental principles of thermoelectricity, the main characteristics of materials needed for high efficiency thermoelectric conversion will be discussed, and a quick review of the most promising materials currently under development will be given. This review paper will put a particular emphasis on nanostructured silicon, which represents a valid compromise between good thermoelectric properties on one side and material availability, sustainability, technological feasibility on the other side. The most important bottom-up and top-down nanofabrication techniques for large area silicon nanowire arrays, to be used for high efficiency thermoelectric devices, will be presented and discussed. PMID:25247111

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ericson, N; Frank, S; Britton, C

2014-02-01

A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into anmore » isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.« less

Thermal detection of single e-h pairs in a biased silicon crystal detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romani, R. K.; Brink, P. L.; Cabrera, B.

We demonstrate that individual electron-hole pairs are resolved in a 1 cm 2 by 4 mm thick silicon crystal (0.93 g) operated at ~35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e –h +) pair in the crystal near the grid. The energy of the drifting charges is measured withmore » a phonon sensor noise σ ~0.09 e – h + pair. In conclusion, the observed charge quantization is nearly identical for h +s or e –s transported across the crystal.« less

Thermal detection of single e-h pairs in a biased silicon crystal detector

DOE PAGES

Romani, R. K.; Brink, P. L.; Cabrera, B.; ...

2018-01-23

We demonstrate that individual electron-hole pairs are resolved in a 1 cm 2 by 4 mm thick silicon crystal (0.93 g) operated at ~35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e –h +) pair in the crystal near the grid. The energy of the drifting charges is measured withmore » a phonon sensor noise σ ~0.09 e – h + pair. In conclusion, the observed charge quantization is nearly identical for h +s or e –s transported across the crystal.« less

Thermal detection of single e-h pairs in a biased silicon crystal detector

NASA Astrophysics Data System (ADS)

Romani, R. K.; Brink, P. L.; Cabrera, B.; Cherry, M.; Howarth, T.; Kurinsky, N.; Moffatt, R. A.; Partridge, R.; Ponce, F.; Pyle, M.; Tomada, A.; Yellin, S.; Yen, J. J.; Young, B. A.

2018-01-01

We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ˜35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e- h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ˜0.09 e- h+ pair. The observed charge quantization is nearly identical for h+s or e-s transported across the crystal.

Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells

NASA Astrophysics Data System (ADS)

Gorbatsevich, A. A.; Danilin, A. B.; Korneev, V. I.; Magomedbekov, E. P.; Molin, A. A.

2016-07-01

Beta-voltaic cells based on standard silicon solar cells with bilateral coating with beta-radiation sources in the form of 63Ni isotope have been studied experimentally and by numerical simulation. The optimal parameters of the cell, including its thickness, the doping level of the substrate, the depth of the p- n junction on its front side, and the p + layer on the back side, as well as the activity of the source material, have been calculated. The limiting theoretical values of the open-circuit voltage (0.26 V), short-circuiting current (2.1 μA), the output power of the cell (0.39 μW), and the efficiency of the conversion of the radioactive energy onto the electric energy (4.8%) have been determined for a beta-source activity of 40 mCi. The results of numerical analysis have been compared with the experimental data.

Magnetically Assisted Bilayer Composites for Soft Bending Actuators.

PubMed

Jang, Sung-Hwan; Na, Seon-Hong; Park, Yong-Lae

2017-06-12

This article presents a soft pneumatic bending actuator using a magnetically assisted bilayer composite composed of silicone polymer and ferromagnetic particles. Bilayer composites were fabricated by mixing ferromagnetic particles to a prepolymer state of silicone in a mold and asymmetrically distributed them by applying a strong non-uniform magnetic field to one side of the mold during the curing process. The biased magnetic field induces sedimentation of the ferromagnetic particles toward one side of the structure. The nonhomogeneous distribution of the particles induces bending of the structure when inflated, as a result of asymmetric stiffness of the composite. The bilayer composites were then characterized with a scanning electron microscopy and thermogravimetric analysis. The bending performance and the axial expansion of the actuator were discussed for manipulation applications in soft robotics and bioengineering. The magnetically assisted manufacturing process for the soft bending actuator is a promising technique for various applications in soft robotics.

Magnetically Assisted Bilayer Composites for Soft Bending Actuators

PubMed Central

Jang, Sung-Hwan; Na, Seon-Hong; Park, Yong-Lae

2017-01-01

This article presents a soft pneumatic bending actuator using a magnetically assisted bilayer composite composed of silicone polymer and ferromagnetic particles. Bilayer composites were fabricated by mixing ferromagnetic particles to a prepolymer state of silicone in a mold and asymmetrically distributed them by applying a strong non-uniform magnetic field to one side of the mold during the curing process. The biased magnetic field induces sedimentation of the ferromagnetic particles toward one side of the structure. The nonhomogeneous distribution of the particles induces bending of the structure when inflated, as a result of asymmetric stiffness of the composite. The bilayer composites were then characterized with a scanning electron microscopy and thermogravimetric analysis. The bending performance and the axial expansion of the actuator were discussed for manipulation applications in soft robotics and bioengineering. The magnetically assisted manufacturing process for the soft bending actuator is a promising technique for various applications in soft robotics. PMID:28773007

Protected, back-illuminated silicon photocathodes or photoanodes for water splitting tandem stacks (Conference Presentation)

NASA Astrophysics Data System (ADS)

Vesborg, Peter C.; Bae, Dowon; Seger, Brian J.; Chorkendorff, Ib; Hansen, Ole; Pedersen, Thomas; Mei, Bastian; Frydendal, Rasmus

2016-10-01

Silicon is a promising contender in the race for low-bandgap absorbers for use in a solar driven monolithic water splitting cell (PEC). However, given its role as the low-bandgap material the silicon must sit behind the corresponding high-bandgap material and as such, it will be exposed to (red) light from the dry back-side - not from the wet front side, where the electrochemistry takes place.[1,2] Depending on the configuration of the selective contacts (junctions) this may lead to compromises between high absorption and low recombination.[2,3] We discuss the tradeoffs and compare modeling results to measurements. Regardless of configuration, the wet surface of the silicon is prone to passivation or corrosion and must therefore be carefully protected in service in order to remain active. We demonstrate the use of TiO2 as an effective protection layer for both photoanodes and photocathodes in acid electrolyte [4] and NiCoOx for photoanodes in alkaline electrolyte. [3] References: [1]: B. Seger et alia, Energ. Environ. Sci., 7 (8), 2397-2413 (2014), DOI:10.1039/c4ee01335b [2]: D. Bae et alia, Energ. Environ. Sci., 8 (2), 650-660 (2015), DOI: 10.1039/c4ee03723e [3]: D. Bae et alia, submitted, (2016) [4]: B. Mei et alia, J. Phys. Chem. C., 119 (27), 15019-15027 (2015), DOI: 10.1021/acs.jpcc.5b04407

All-silicon-based nano-antennas for wavelength and polarization demultiplexing.

PubMed

Panmai, Mingcheng; Xiang, Jin; Sun, Zhibo; Peng, Yuanyuan; Liu, Hongfeng; Liu, Haiying; Dai, Qiaofeng; Tie, Shaolong; Lan, Sheng

2018-05-14

We propose an all-silicon-based nano-antenna that functions as not only a wavelength demultiplexer but also a polarization one. The nano-antenna is composed of two silicon cuboids with the same length and height but with different widths. The asymmetric structure of the nano-antenna with respect to the electric field of the incident light induced an electric dipole component in the propagation direction of the incident light. The interference between this electric dipole and the magnetic dipole induced by the magnetic field parallel to the long side of the cuboids is exploited to manipulate the radiation direction of the nano-antenna. The radiation direction of the nano-antenna at a certain wavelength depends strongly on the phase difference between the electric and magnetic dipoles interacting coherently, offering us the opportunity to realize wavelength demultiplexing. By varying the polarization of the incident light, the interference of the magnetic dipole induced by the asymmetry of the nano-antenna and the electric dipole induced by the electric field parallel to the long side of the cuboids can also be used to realize polarization demultiplexing in a certain wavelength range. More interestingly, the interference between the dipole and quadrupole modes of the nano-antenna can be utilized to shape the radiation directivity of the nano-antenna. We demonstrate numerically that radiation with adjustable direction and high directivity can be realized in such a nano-antenna which is compatible with the current fabrication technology of silicon chips.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

NASA Astrophysics Data System (ADS)

Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

2017-02-01

High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

The fabrication and property of hydrophilic and hydrophobic double functional bionic chitosan film.

PubMed

Wang, Xiaohong; Xi, Zhen; Liu, Zhongxin; Yang, Liang; Cao, Yang

2011-11-01

A new kind of hydrophobic bionic chitosan film was fabricated by simulating the surface structure of lotus leaf. The titanium oxide nanotube array was used as templates. Scanning electron microscopy (SEM) images show that one side of this films have nano-scale rough surface with spherical protrusions alike the surface of lotus leaf. The diameter of the protrusions is about 100 nm, which is equal to diameter of the titanium oxide nanotube. The water contact angle of chitosan films is up to 120 degrees and it is hydrophobic. The other side of the film is flat and the contact angle is 70 degrees. That indicated that the hydrophilism of natural materials is connected with the surface structures. The double functional chitosan films, one side is hydrophilic, the other is hydrophobic, can be made by an easy method. This method is non-toxic and clean. The double functional chitosan film will improve the application of chitosan films in medicine.

Flexible organic light-emitting diodes with enhanced light out-coupling efficiency fabricated on a double-sided nanotextured substrate.

PubMed

Luo, Yu; Wang, Chunhui; Wang, Li; Ding, Yucheng; Li, Long; Wei, Bin; Zhang, Jianhua

2014-07-09

High-efficiency organic light-emitting diodes (OLEDs) have generated tremendous research interest. One of the exciting possibilities of OLEDs is the use of flexible plastic substrates, which unfortunately have a mismatching refractive index compared with the conventional ITO anode and the air. To unlock the light loss on flexible plastic, we report a high-efficiency flexible OLED directly fabricated on a double-sided nanotextured polycarbonate substrate by thermal nanoimprint lithography. The template for the nanoimprint process is a replicate from a silica arrayed with nanopillars and fabricated by ICP etching through a SiO2 colloidal spheres mask. It has been shown that with the internal quasi-periodical scattering gratings the efficiency enhancement can reach 50% for a green light OLED, and with an external antireflection structure, the normal transmittance is increased from 89% to 94% for paraboloid-like pillars. The OLED directly fabricated on the double-sided nanotextured polycarbonate substrate has reached an enhancing factor of ∼2.8 for the current efficiency.

Effectiveness of hyaluronic acid in post-tonsillectomy pain relief and wound healing: a prospective, double-blind, controlled clinical study.

PubMed

Hancı, Deniz; Altun, Huseyin

2015-09-01

To find the effectiveness of hyaluronic acid in post-tonsillectomy pain relief and wound healing. Fifty patients were included in this prospective, double-blind, controlled clinical study (20 males, 30 females mean age of 13.56 years). Hyaluronic acid was applied to one side and the other side was used as a control during tonsillectomy. Therefore, the same patient evaluated and scored the post-tonsillectomy pain, excluding individual bias. Results indicated that patients had significantly lower pain scores for hyaluronic acid treated side (p<0.001). At the end of two weeks follow-up period, the wound in the hyaluronic acid side was almost completely healed, indicating that the healing was faster with hyaluronic acid compared to control side (p<0.001). Hyaluronic acid could be recommended as an effective treatment for the management of post-tonsillectomy pain and wound healing. Copyright © 2015. Published by Elsevier Ireland Ltd.

Design of micro bending deformer for optical fiber weight sensor

NASA Astrophysics Data System (ADS)

Ula, R. K.; Hanto, D.; Waluyo, T. B.; Adinanta, H.; Widiyatmoko, B.

2017-04-01

The road damage due to excessive load is one of the causes of accidents on the road. A device to measure weight of the passing vehicles needs to be planted in the road structure. Thus, a weight sensor for the passing vehicles is required. In this study, we designed a weight sensor for a static load based on a power loss due to a micro bending on the optical fiber flanked on a board. The following main components are used i.e. LED 1310 nm as a light source, a multimode fiber optic as a transmission media and a power meter for measuring power loss. This works focuses on obtaining a suitable deformer design for weight sensor. Experimental results show that deformer design with 1.5 mm single side has level of accuracy as 4.32% while the design with 1.5 mm double side has level of accuracy as 98.77%. Increasing deformer length to 2.5 mm gives 71.18% level of accuracy for single side, and 76.94% level of accuracy for double side. Micro bending design with 1.5 mm double side has a high sensitivity and it is also capable of measuring load up to 100 kg. The sensor designed has been tested for measuring the weight of motor cycle, and it can be upgraded for measuring heavy vehicles.

ANTERIOR CRUCIATE LIGAMENT RECONSTRUCTION USING THE DOUBLE-BUNDLE TECHNIQUE - EVALUATION IN THE BIOMECHANICS LABORATORY.

PubMed

D'Elia, Caio Oliveira; Bitar, Alexandre Carneiro; Castropil, Wagner; Garofo, Antônio Guilherme Padovani; Cantuária, Anita Lopes; Orselli, Maria Isabel Veras; Luques, Isabela Ugo; Duarte, Marcos

2011-01-01

The objective of this study was to describe the methodology of knee rotation analysis using biomechanics laboratory instruments and to present the preliminary results from a comparative study on patients who underwent anterior cruciate ligament (ACL) reconstruction using the double-bundle technique. The protocol currently used in our laboratory was described. Three-dimensional kinematic analysis was performed and knee rotation amplitude was measured on eight normal patients (control group) and 12 patients who were operated using the double-bundle technique, by means of three tasks in the biomechanics laboratory. No significant differences between operated and non-operated sides were shown in relation to the mean amplitudes of gait, gait with change in direction or gait with change in direction when going down stairs (p > 0.13). The preliminary results did not show any difference in the double-bundle ACL reconstruction technique in relation to the contralateral side and the control group.

Developments toward an 18% efficient silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.

1983-01-01

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Electrical Double Layer-Induced Ion Surface Accumulation for Ultrasensitive Refractive Index Sensing with Nanostructured Porous Silicon Interferometers.

PubMed

Mariani, Stefano; Strambini, Lucanos Marsilio; Barillaro, Giuseppe

2018-03-23

Herein, we provide the first experimental evidence on the use of electrical double layer (EDL)-induced accumulation of charged ions (using both Na + and K + ions in water as the model) onto a negatively charged nanostructured surface (e.g., thermally growth SiO 2 )-Ion Surface Accumulation, ISA-as a means of improving performance of nanostructured porous silicon (PSi) interferometers for optical refractometric applications. Nanostructured PSi interferometers are very promising optical platforms for refractive index sensing due to PSi huge specific surface (hundreds of m 2 per gram) and low preparation cost (less than $0.01 per 8 in. silicon wafer), though they have shown poor resolution ( R) and detection limit (DL) (on the order of 10 -4 -10 -5 RIU) compared to other plasmonic and photonic platforms ( R and DL on the order of 10 -7 -10 -8 RIU). This can be ascribed to both low sensitivity and high noise floor of PSi interferometers when bulk refractive index variation of the solution infiltrating the nanopores either approaches or is below 10 -4 RIU. Electrical double layer-induced ion surface accumulation (EDL-ISA) on oxidized PSi interferometers allows the interferometer output signal (spectral interferogram) to be impressively amplified at bulk refractive index variation below 10 -4 RIU, increasing, in turn, sensitivity up to 2 orders of magnitude and allowing reliable measurement of refractive index variations to be carried out with both DL and R of 10 -7 RIU. This represents a 250-fold-improvement (at least) with respect to the state-of-the-art literature on PSi refractometers and pushes PSi interferometer performance to that of state-of-the-art ultrasensitive photonics/plasmonics refractive index platforms.

FIBER AND INTEGRATED OPTICS: New type of heterogeneous nanophotonic silicon-on-insulator optical waveguides

NASA Astrophysics Data System (ADS)

Tsarev, Andrei V.

2007-08-01

A new type of optical waveguides in silicon-on-insulator nanostructures is proposed and studied. Their optical properties are simulated by the beam propagation method and discussed. A new design in the form of heterogeneous waveguide structures is based on the production of additionally heavily doped p+-regions on the sides of a multimode stripe waveguide (the silicon core cross section is ~200 nm × 16 μm). Such doping provides the 'single-mode' behaviour of the heterogeneous waveguide due to the decrease in the optical losses for the fundamental mode and increase in losses for higher-order modes. Single-mode heterogeneous waveguides can be used as base waveguides in photonic and integrated optical elements.

Silicon-Based Thermoelectrics: Harvesting Low Quality Heat Using Economically Printed Flexible Nanostructured Stacked Thermoelectric Junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-03-01

Broad Funding Opportunity Announcement Project: UIUC is experimenting with silicon-based materials to develop flexible thermoelectric devices—which convert heat into energy—that can be mass-produced at low cost. A thermoelectric device, which resembles a computer chip, creates electricity when a different temperature is applied to each of its sides. Existing commercial thermoelectric devices contain the element tellurium, which limits production levels because tellurium has become increasingly rare. UIUC is replacing this material with microscopic silicon wires that are considerably cheaper and could be equally effective. Improvements in thermoelectric device production could return enough wasted heat to add up to 23% to ourmore » current annual electricity production.« less

46 CFR 91.40-3 - Drydock examination, internal structural examination, cargo tank internal examination, and...

Code of Federal Regulations, 2010 CFR

2010-10-01

... hull barge with internal framing 1 Double hull barge with external framing 2 Single hull barge with..., ends, and bottoms) when the structural framing is on the internal tank surface. 2 Applicable to double hull tank barges (double sides, ends, and bottoms) when the structural framing is on the external tank...

Synoptic Formation of Double Tropopauses

NASA Astrophysics Data System (ADS)

Liu, Chengji; Barnes, Elizabeth

2018-01-01

Double tropopauses are ubiquitous in the midlatitude winter hemisphere and represent the vertical stacking of two stable tropopause layers separated by a less stable layer. By analyzing COSMIC GPS data, reanalysis, and eddy life cycle simulations, we demonstrate that they often occur during Rossby wave breaking and act to increase the stratosphere-to-troposphere exchange of mass. We further investigate the adiabatic formation of double tropopauses and propose two mechanisms by which they can occur. The first mechanism operates at the tropopause break in the subtropics where the higher tropical tropopause sits on one side of the break and the lower extratropical tropopause sits on the other. The double tropopauses are then formed by differential meridional advection of the higher and lower tropopauses on the two sides of the tropopause break. We show that anticyclonic wave breaking can form double tropopauses mainly by providing stronger poleward advection of the higher tropopause in its poleward lobe. Cyclonic wave breaking mainly forms double tropopauses by providing stronger equatorward advection of the lower tropopause in its equatorward lobe. We demonstrate in the COSMIC GPS data and reanalysis that about half of the double tropopauses in the Northern Hemisphere winter can be directly attributed to such differential advection. For the second mechanism, adiabatic destabilization of the air above the tropopause contributes to the formation of a double tropopause. In this case, a tropopause inversion layer is necessary for this destabilization to result in a double tropopause.

Ultrafast-laser dicing of thin silicon wafers: strategies to improve front- and backside breaking strength

NASA Astrophysics Data System (ADS)

Domke, Matthias; Egle, Bernadette; Stroj, Sandra; Bodea, Marius; Schwarz, Elisabeth; Fasching, Gernot

2017-12-01

Thin 50-µm silicon wafers are used to improve heat dissipation of chips with high power densities. However, mechanical dicing methods cause chipping at the edges of the separated dies that reduce the mechanical stability. Thermal load changes may then lead to sudden chip failure. Recent investigations showed that the mechanical stability of the cut chips could be increased using ultrashort-pulsed lasers, but only at the laser entrance (front) side and not at the exit (back) side. The goal of this study was to find strategies to improve both front- and backside breaking strength of chips that were cut out of an 8″ wafer with power metallization using an ultrafast laser. In a first experiment, chips were cut by scanning the laser beam in single lines across the wafer using varying fluencies and scan speeds. Three-point bending tests of the cut chips were performed to measure front and backside breaking strengths. The results showed that the breaking strength of both sides increased with decreasing accumulated fluence per scan. Maximum breaking strengths of about 1100 MPa were achieved at the front side, but only below 600 MPa were measured for the backside. A second experiment was carried out to optimize the backside breaking strength. Here, parallel line scans to increase the distance between separated dies and step cuts to minimize the effect of decreasing fluence during scribing were performed. Bending tests revealed that breaking strengths of about 1100 MPa could be achieved also on the backside using the step cut. A reason for the superior performance could be found by calculating the fluence absorbed by the sidewalls. The calculations suggested that an optimal fluence level to minimize thermal side effects and periodic surface structures was achieved due to the step cut. Remarkably, the best breaking strengths values achieved in this study were even higher than the values obtained on state of the art ns-laser and mechanical dicing machines. This is the first study to the knowledge of the authors, which demonstrates that ultrafast-laser dicing improves the mechanical stability of thin silicon chips.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Feng; Spring, Andrew M.; Sato, Hiromu

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that ofmore » the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.« less

Material Analysis of Coated Siliconized Silicon Carbide (SiSiC) Honeycomb Structures for Thermochemical Hydrogen Production

PubMed Central

Neises-von Puttkamer, Martina; Simon, Heike; Schmücker, Martin; Roeb, Martin; Sattler, Christian; Pitz-Paal, Robert

2013-01-01

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO2, zircon (ZrSiO4), iron silicide (FeSi) and hercynite (FeAl2O4) indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si), which is present in the SiSiC matrix, and silicon carbide (SiC). These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO2) and through SiC forming SiO2 and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie. PMID:28809316

Material Analysis of Coated Siliconized Silicon Carbide (SiSiC) Honeycomb Structures for Thermochemical Hydrogen Production.

PubMed

Neises-von Puttkamer, Martina; Simon, Heike; Schmücker, Martin; Roeb, Martin; Sattler, Christian; Pitz-Paal, Robert

2013-01-31

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO₂, zircon (ZrSiO₄), iron silicide (FeSi) and hercynite (FeAl₂O₄) indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si), which is present in the SiSiC matrix, and silicon carbide (SiC). These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO₂) and through SiC forming SiO₂ and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie.

Solar cell with a gallium nitride electrode

DOEpatents

Pankove, Jacques I.

1979-01-01

A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

Development of high energy density electrical double layer capacitors

NASA Astrophysics Data System (ADS)

Devarajan, Thamarai selvi

Electrochemical Double Layer capacitors (EDLCs) have shown themselves as a viable energy storage alternative. EDLCs have high power density, faster charge/discharge, wide operating temperature and long cycle life compared to batteries since it stores charge by physical separation. Despites all their advantages, their low energy density stand as a bottleneck for capacitors. This research aims to increase the energy density of EDLC without compromising the power density. Energy is proportional to the square of cell voltage. Cell voltage is mainly dependent on electrolyte breakdown. Electrolytes also provide ions for charge separation and conduction. Therefore various electrolytes (Solutes and Solvents) which can give high concentration, solubility and decomposition potential were characterized in the first part of the research. In that study, a novel ionic liquid OPBF4 had higher capacitance and comparable voltage window compared to commercial TEABF4 in Acetonitrile. However, the increased polarity of the fixed ring O-atom and the ion-ion interaction in OPBF4 was responsible for lowering its conductivity. Oxygenated ionic compounds with alkyl groups had lower stability due to beta elimination between two electron withdrawing atoms. Volume based thermodynamics and quantum chemical calculations were used to calculate ion size, HOMO/LUMO energies, and free energy changes and establish relationship with capacitance, redox potential and melting points respectively. In addition free energy of fusion was used to predict the melting point. Ion size had correlation with capacitance due to compact double layer formation. Free energy changes did not explain the differences in melting point and predicted dielectric constant was inconsistent with the polarity. This is presumably due to using Van der Waals volume instead of crystal structure volume and insufficient incorporation of polarization term. The HOMO/LUMO energies gave direct relation between oxidation and reduction potential at 1mA/cm 2. A brief study on non-polar co-solvents for EDLC was studied. Among the solvents studied, fluorinated solvents had low melting point and viscosity due to incorporation of asymmetry. However, because of low dielectric constant, TEABF4 is insoluble and had to be mixed with other solvents. The mixed fluorinated solvents had slightly higher voltage window due to decreased donicity of lone pairs of electrons. The second approach to increasing energy density is to increase capacitance. Capacitance is mainly dependent on surface area and porosity of electrodes. Nanostructured materials which can offer multiple charge storage are currently of interest. Hence, novel NiSi nanotubes were studied as electrodes for supercapacitor applications. Silicon material has high capacity and these inert electrodes can enable higher capacitance by controlling the porosity and functional groups in specific electrolytes. The Silicon wafers were made porous by anodization using hydrofluoric acid. In order to improve the conductivity, the porous silicon was doped, then plated with Ni using electroless plating method and annealed to form nickel mono silicide. Gold was deposited on the back side of the electrode to enhance conductivity. Our porous NiSi electrodes gave capacitance of about 1185muF /cm2 in 0.5 M H 2SO4. Further investigation of oxide formation and modification of functional groups will help achieve higher capacitance.

4. Detail of the south side of the building showing ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

4. Detail of the south side of the building showing the decorative-brick cornice, typical double-hung window, and chimneys. Credit GADA/MRM. - Stroud Building, 31-33 North Central Avenue, Phoenix, Maricopa County, AZ

14. LIVING ROOM INTERIOR SHOWING WEST SIDE AND SOUTH END ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

14. LIVING ROOM INTERIOR SHOWING WEST SIDE AND SOUTH END DOUBLE FRENCH DOORS, AND FIBERBOARD WALLS. VIEW TO SOUTHWEST. - Big Creek Hydroelectric System, Powerhouse 8, Operator Cottage, Big Creek, Big Creek, Fresno County, CA

Recurrent laryngeal nerve regeneration through a silicone tube produces reinnervation without vocal fold mobility in rats.

PubMed

Kumai, Yoshihiko; Aoyama, Takashi; Nishimoto, Kohei; Sanuki, Tetsuji; Minoda, Ryosei; Yumoto, Eiji

2013-01-01

We established an animal model of recurrent laryngeal nerve reinnervation with persistent vocal fold immobility following recurrent laryngeal nerve injury. In 36 rats, the left recurrent laryngeal nerve was transected and the stumps were abutted in a silicone tube with a 1-mm interspace, facilitating regeneration. The mobility of the vocal folds was examined endoscopically 5, 10, and 15 weeks later. Electromyography of the thyroarytenoid muscle was performed. Reinnervation was assessed by means of a quantitative immunohistologic evaluation with anti-neurofilament antibody in the nerve both proximal and distal to the silicone tube. The atrophy of the thyroarytenoid muscle was assessed histologically. We observed that all animals had a fixed left vocal fold throughout the study. The average neurofilament expression in the nerve both distal and proximal to the silicone tube, the muscle area, and the amplitude of the compound muscle action potential recorded from the thyroarytenoid muscle on the treated side increased significantly (p < 0.05) over time, demonstrating regeneration through the silicone tube. Recurrent laryngeal nerve regeneration through a silicone tube produced reinnervation without vocal fold mobility in rats. The efficacy of new laryngeal reinnervation treatments can be assessed with this model.

Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

NASA Technical Reports Server (NTRS)

Allevato, C. E.; Vining, Cronin B.

1992-01-01

The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

Implementation of controlled quantum teleportation with an arbitrator for secure quantum channels via quantum dots inside optical cavities.

PubMed

Heo, Jino; Hong, Chang-Ho; Kang, Min-Sung; Yang, Hyeon; Yang, Hyung-Jin; Hong, Jong-Phil; Choi, Seong-Gon

2017-11-02

We propose a controlled quantum teleportation scheme to teleport an unknown state based on the interactions between flying photons and quantum dots (QDs) confined within single- and double-sided cavities. In our scheme, users (Alice and Bob) can teleport the unknown state through a secure entanglement channel under the control and distribution of an arbitrator (Trent). For construction of the entanglement channel, Trent utilizes the interactions between two photons and the QD-cavity system, which consists of a charged QD (negatively charged exciton) inside a single-sided cavity. Subsequently, Alice can teleport the unknown state of the electron spin in a QD inside a double-sided cavity to Bob's electron spin in a QD inside a single-sided cavity assisted by the channel information from Trent. Furthermore, our scheme using QD-cavity systems is feasible with high fidelity, and can be experimentally realized with current technologies.

Variation in shape of the lingula in the adult human mandible

PubMed Central

TULI, A.; CHOUDHRY, R.; CHOUDHRY, S.; RAHEJA, S.; AGARWAL, S.

2000-01-01

The lingulae of both sides of 165 dry adult human mandibles, 131 males and 34 females of Indian origin, were classified by their shape into 4 types: 1, triangular; 2, truncated; 3, nodular; and 4, assimilated. Triangular lingulae were found in 226 (68.5%) sides, truncated in 52 (15.8%), nodular in 36 (10.9%) and assimilated in 16 (4.8%) sides. Triangular lingulae were found bilaterally in 110, truncated in 23, nodular in 17 and assimilated in 7 mandibles. Of the remaining 8 mandibles with different appearances on the 2 sides, 6 had a combination of triangular and truncated and 2 had nodular and assimilated. The incidence of triangular and assimilated types in the male and female mandibles are almost equal. In the truncated type it was double in the male mandibles while the nodular type was a little less than double in the female mandibles. PMID:11005723

Gate protective device for SOS array

NASA Technical Reports Server (NTRS)

Meyer, J. E., Jr.; Scott, J. H.

1972-01-01

Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.

Investigation of the double exponential in the current-voltage characteristics of silicon solar cells. [proton irradiation effects on ATS 1 cells

NASA Technical Reports Server (NTRS)

Wolf, M.; Noel, G. T.; Stirn, R. J.

1977-01-01

Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

Analysis of multiple internal reflections in a parallel aligned liquid crystal on silicon SLM.

PubMed

Martínez, José Luis; Moreno, Ignacio; del Mar Sánchez-López, María; Vargas, Asticio; García-Martínez, Pascuala

2014-10-20

Multiple internal reflection effects on the optical modulation of a commercial reflective parallel-aligned liquid-crystal on silicon (PAL-LCoS) spatial light modulator (SLM) are analyzed. The display is illuminated with different wavelengths and different angles of incidence. Non-negligible Fabry-Perot (FP) effect is observed due to the sandwiched LC layer structure. A simplified physical model that quantitatively accounts for the observed phenomena is proposed. It is shown how the expected pure phase modulation response is substantially modified in the following aspects: 1) a coupled amplitude modulation, 2) a non-linear behavior of the phase modulation, 3) some amount of unmodulated light, and 4) a reduction of the effective phase modulation as the angle of incidence increases. Finally, it is shown that multiple reflections can be useful since the effect of a displayed diffraction grating is doubled on a beam that is reflected twice through the LC layer, thus rendering gratings with doubled phase modulation depth.

Anisotropy modulations of femtosecond laser pulse induced periodic surface structures on silicon by adjusting double pulse delay.

PubMed

Han, Weina; Jiang, Lan; Li, Xiaowei; Wang, Qingsong; Li, Hao; Lu, YongFeng

2014-06-30

We demonstrate that the polarization-dependent anisotropy of the laser-induced periodic surface structure (LIPSS) on silicon can be adjusted by designing a femtosecond laser pulse train (800 nm, 50 fs, 1 kHz). By varying the pulse delay from 100 to 1600 fs within a double pulse train to reduce the deposited pulse energy, which weakens the directional surface plasmon polarition (SPP)-laser energy coupling based on the initial formed ripple structure, the polarization-dependent geometrical morphology of the LIPSS evolves from a nearly isotropic circular shape to a somewhat elongated elliptical shape. Meanwhile, the controllable anisotropy of the two-dimensional scanned-line widths with different directions is achieved based on a certain pulse delay combined with the scanning speed. This can effectively realize better control over large-area uniform LIPSS formation. As an example, we further show that the large-area LIPSS can be formed with different scanning times under different pulse delays.

Development of a silicone hollow fiber membrane oxygenator for ECMO application.

PubMed

Yamane, S; Ohashi, Y; Sueoka, A; Sato, K; Kuwana, J; Nosé, Y

1998-01-01

A new silicone hollow fiber membrane oxygenator for extracorporeal membrane oxygenation (ECMO) was developed using an ultrathin silicone hollow fiber, with a 300 microm outer diameter and a wall thickness of 50 microm. The hollow fibers were mechanically cross-wound on the flow distributor to achieve equal distribution of blood flow without changing the fiber shape. The housing, made of silicone coated acryl, was 236 mm long with an inner diameter of 60 mm. The surface area was 1.0 m2 for prototype 211, and 1.1 m2 for prototype 209. The silicone fiber length was 150 mm, and the silicone membrane packing density was 43% for prototype 211 and 36% for prototype 209. Prototype 211 has a priming volume of 208 ml, and prototype 209 has a priming volume of 228 ml. The prototype 211 oxygenator demonstrates a gas transfer rate of 120 +/- 5 ml/min (mean +/- SD) for O2 and 67 +/- 12 ml/min for CO2 under 2 L of blood flow and 4 L of O2 gas flow. Prototype 209 produced the same values. The blood side pressure drop was low compared with the silicone sheet oxygenator (Avecor, 1500ECMO). These results showed that this new oxygenator for ECMO had efficiency similar to the silicone sheet oxygenator that has a 50% larger surface area. These results suggest that the new generation oxygenator using an ultrathin silicone hollow fiber possesses sufficient gas transfer performance for long-term extracorporeal lung support.

Interior view of bedroom 3 showing double doors to dining ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Interior view of bedroom 3 showing double doors to dining area and china dresser in background, facing southeast. - Albrook Air Force Station, Company Officer's Quarters, East side of Canfield Avenue, Balboa, Former Panama Canal Zone, CZ

5. Double crib barn, main floor, 4th room from northeast, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. Double crib barn, main floor, 4th room from northeast, southeast and southwest walls - Wilkins Farm, Barn, South side of Dove Hollow Road, 6000 feet east of State Route 259, Lost City, Hardy County, WV

Control of periodic surface structures on silicon by combined temporal and polarization shaping of femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Fraggelakis, F.; Stratakis, E.; Loukakos, P. A.

2018-06-01

We demonstrate the capability to exercise advanced control on the laser-induced periodic surface structures (LIPSS) on silicon by combining the effect of temporal shaping, via tuning the interpulse temporal delay between double femtosecond laser pulses, along with the independent manipulation of the polarization state of each of the individual pulses. For this, cross-polarized (CP) as well as counter-rotating (CR) double circularly polarized pulses have been utilized. The pulse duration was 40 fs and the central wavelength of 790 nm. The linearly polarized double pulses are generated by a modified Michelson interferometer allowing the temporal delay between the pulses to vary from Δτ = -80 ps to Δτ = +80 ps with an accuracy of 0.2 fs. We show the significance of fluence balance between the two pulse components and its interplay with the interpulse delay and with the order of arrival of the individually polarized pulse components of the double pulse sequence on the final surface morphology. For the case of CR pulses we found that when the pulses are temporally well separated the surface morphology attains no axial symmetry. But strikingly, when the two CP pulses temporally overlap, we demonstrate, for the first time in our knowledge, the detrimental effect that the phase delay has on the ripple orientation. Our results provide new insight showing that temporal pulse shaping in combination with polarization control gives a powerful tool for drastically controlling the surface nanostructure morphology.

Suppression of nanoindentation-induced phase transformation in crystalline silicon implanted with hydrogen

NASA Astrophysics Data System (ADS)

Jelenković, Emil V.; To, Suet

2017-09-01

In this paper the effect of hydrogen implantation in silicon on nanoindentation-induced phase transformation is investigated. Hydrogen ions were implanted in silicon through 300 nm thick oxide with double energy implantation (75 and 40 keV). For both energies implantation dose was 4 × 1016 cm-2. Some samples were thermally annealed at 400 °C. The micro-Raman spectroscopy was applied on nanoindentation imprints and the obtained results were related to the pop out/elbow appearances in nanoindentatioin unloading-displacement curves. The Raman spectroscopy revealed a suppression of Si-XII and Si-III phases and formation of a-Si in the indents of hydrogen implanted Si. The high-resolution x-ray diffraction measurements were taken to support the analysis of silicon phase formation during nanoindentation. Implantation induced strain, high hydrogen concentration, and platelets generation were found to be the factors that control suppression of c-Si phases Si-XII and Si-III, as well as a-Si phase enhancement during nanoindentation. [Figure not available: see fulltext.

Internal alignment and position resolution of the silicon tracker of DAMPE determined with orbit data

NASA Astrophysics Data System (ADS)

Tykhonov, A.; Ambrosi, G.; Asfandiyarov, R.; Azzarello, P.; Bernardini, P.; Bertucci, B.; Bolognini, A.; Cadoux, F.; D'Amone, A.; De Benedittis, A.; De Mitri, I.; Di Santo, M.; Dong, Y. F.; Duranti, M.; D'Urso, D.; Fan, R. R.; Fusco, P.; Gallo, V.; Gao, M.; Gargano, F.; Garrappa, S.; Gong, K.; Ionica, M.; La Marra, D.; Lei, S. J.; Li, X.; Loparco, F.; Marsella, G.; Mazziotta, M. N.; Peng, W. X.; Qiao, R.; Salinas, M. M.; Surdo, A.; Vagelli, V.; Vitillo, S.; Wang, H. Y.; Wang, J. Z.; Wang, Z. M.; Wu, D.; Wu, X.; Zhang, F.; Zhang, J. Y.; Zhao, H.; Zimmer, S.

2018-06-01

The DArk Matter Particle Explorer (DAMPE) is a space-borne particle detector designed to probe electrons and gamma-rays in the few GeV to 10 TeV energy range, as well as cosmic-ray proton and nuclei components between 10 GeV and 100 TeV. The silicon-tungsten tracker-converter is a crucial component of DAMPE. It allows the direction of incoming photons converting into electron-positron pairs to be estimated, and the trajectory and charge (Z) of cosmic-ray particles to be identified. It consists of 768 silicon micro-strip sensors assembled in 6 double layers with a total active area of 6.6 m2. Silicon planes are interleaved with three layers of tungsten plates, resulting in about one radiation length of material in the tracker. Internal alignment parameters of the tracker have been determined on orbit, with non-showering protons and helium nuclei. We describe the alignment procedure and present the position resolution and alignment stability measurements.

Silicon wafer-based tandem cells: The ultimate photovoltaic solution?

NASA Astrophysics Data System (ADS)

Green, Martin A.

2014-03-01

Recent large price reductions with wafer-based cells have increased the difficulty of dislodging silicon solar cell technology from its dominant market position. With market leaders expected to be manufacturing modules above 16% efficiency at 0.36/Watt by 2017, even the cost per unit area (60-70/m2) will be difficult for any thin-film photovoltaic technology to significantly undercut. This may make dislodgement likely only by appreciably higher energy conversion efficiency approaches. A silicon wafer-based cell able to capitalize on on-going cost reductions within the mainstream industry, but with an appreciably higher than present efficiency, might therefore provide the ultimate PV solution. With average selling prices of 156 mm quasi-square monocrystalline Si photovoltaic wafers recently approaching 1 (per wafer), wafers now provide clean, low cost templates for overgrowth of thin, wider bandgap high performance cells, nearly doubling silicon's ultimate efficiency potential. The range of possible Si-based tandem approaches is reviewed together with recent results and ultimate prospects.

Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

PubMed

Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

Design of hybrid laser structures with QD-RSOA and silicon photonic mirrors

NASA Astrophysics Data System (ADS)

Gioannini, Mariangela; Benedetti, Alessio; Bardella, Paolo; Bovington, Jock; Traverso, Matt; Siriani, Dominic; Gothoskar, Prakash

2018-02-01

We compare the design of three different single mode laser structures consisting in a Reflective Semiconductor Optical Amplifier coupled to a silicon photonic external cavity mirror. The three designs differ for the mirror structure and are compared in terms of SOA power consumption and side mode suppression ratio (SMSR). Assuming then a Quantum Dot active material, we simulate the best laser design using a numerical model that includes the peculiar physical characteristics of the QD gain medium. The simulated QD laser CW characteristics are shown and discussed.

Evolution of a phase separated gravity independent bioreactor

NASA Technical Reports Server (NTRS)

Villeneuve, Peter E.; Dunlop, Eric H.

1992-01-01

The evolution of a phase-separated gravity-independent bioreactor is described. The initial prototype, a zero head-space manifold silicone membrane based reactor, maintained large diffusional resistances. Obtaining oxygen transfer rates needed to support carbon-recycling aerobic microbes is impossible if large resistances are maintained. Next generation designs (Mark I and II) mimic heat exchanger design to promote turbulence at the tubing-liquid interface, thereby reducing liquid and gas side diffusional resistances. While oxygen transfer rates increased by a factor of ten, liquid channeling prevented further increases. To overcome these problems, a Mark III reactor was developed which maintains inverted phases, i.e., media flows inside the silicone tubing, oxygen gas is applied external to the tubing. This enhances design through changes in gas side driving force concentration and liquid side turbulence levels. Combining an applied external pressure of 4 atm with increased Reynolds numbers resulted in oxygen transfer intensities of 232 mmol O2/l per hr (1000 times greater than the first prototype and comparable to a conventional fermenter). A 1.0 liter Mark III reactor can potentially deliver oxygen supplies necessary to support cell cultures needed to recycle a 10-astronaut carbon load continuously.

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

PubMed Central

Takeda, Kenta; Kamioka, Jun; Otsuka, Tomohiro; Yoneda, Jun; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Allison, Giles; Kodera, Tetsuo; Oda, Shunri; Tarucha, Seigo

2016-01-01

Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor Q (the Rabi oscillation decay time divided by the π rotation time). In isotopically purified silicon quantum dots, only the second approach has been used, leaving the qubit operation slow. We apply the first approach to demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet that is optimally designed for fast spin control. This optimized design allows access to Rabi frequencies up to 35 MHz, which is two orders of magnitude greater than that achieved in previous studies. We find the optimum Q = 140 in such high-frequency range at a Rabi frequency of 10 MHz. This leads to a qubit fidelity of 99.6% measured via randomized benchmarking, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum dot–based qubits. This result can inspire contributions to quantum computing from industrial communities. PMID:27536725

A fault-tolerant addressable spin qubit in a natural silicon quantum dot.

PubMed

Takeda, Kenta; Kamioka, Jun; Otsuka, Tomohiro; Yoneda, Jun; Nakajima, Takashi; Delbecq, Matthieu R; Amaha, Shinichi; Allison, Giles; Kodera, Tetsuo; Oda, Shunri; Tarucha, Seigo

2016-08-01

Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor Q (the Rabi oscillation decay time divided by the π rotation time). In isotopically purified silicon quantum dots, only the second approach has been used, leaving the qubit operation slow. We apply the first approach to demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet that is optimally designed for fast spin control. This optimized design allows access to Rabi frequencies up to 35 MHz, which is two orders of magnitude greater than that achieved in previous studies. We find the optimum Q = 140 in such high-frequency range at a Rabi frequency of 10 MHz. This leads to a qubit fidelity of 99.6% measured via randomized benchmarking, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum dot-based qubits. This result can inspire contributions to quantum computing from industrial communities.

Impurity screening behavior of the high-field side scrape-off layer in near-double-null configurations: prospect for mitigating plasma-material interactions on RF actuators and first-wall components

NASA Astrophysics Data System (ADS)

LaBombard, B.; Kuang, A. Q.; Brunner, D.; Faust, I.; Mumgaard, R.; Reinke, M. L.; Terry, J. L.; Howard, N.; Hughes, J. W.; Chilenski, M.; Lin, Y.; Marmar, E.; Rice, J. E.; Rodriguez-Fernandez, P.; Wallace, G.; Whyte, D. G.; Wolfe, S.; Wukitch, S.

2017-07-01

The impurity screening response of the high-field side (HFS) scrape-off layer (SOL) to localized nitrogen injection is investigated on Alcator C-Mod for magnetic equilibria spanning lower-single-null, double-null and upper-single-null configurations under otherwise identical plasma conditions. L-mode, EDA H-mode and I-mode discharges are investigated. HFS impurity screening is found to depend on magnetic flux balance and the direction of B  ×  \

Isolation and functional characterization of CsLsi1, a silicon transporter gene in Cucumis sativus.

PubMed

Sun, Hao; Guo, Jia; Duan, Yaoke; Zhang, Tiantian; Huo, Heqiang; Gong, Haijun

2017-02-01

Cucumber (Cucumis sativus) is a widely grown cucurbitaceous vegetable that exhibits a relatively high capacity for silicon (Si) accumulation, but the molecular mechanism for silicon uptake remains to be clarified. Here we isolated and characterized CsLsi1, a gene encoding a silicon transporter in cucumber (cv. Mch-4). CsLsi1 shares 55.70 and 90.63% homology with the Lsi1s of a monocot and dicot, rice (Oryza sativa) and pumpkin (Cucurbita moschata), respectively. CsLsi1 was predominantly expressed in the roots, and application of exogenous silicon suppressed its expression. Transient expression in cucumber protoplasts showed that CsLsi1 was localized in the plasma membrane. Heterologous expression in Xenopus laevis oocytes showed that CsLsi1 evidenced influx transport activity for silicon but not urea or glycerol. Expression of cucumber CsLsi1-mGFP under its own promoter showed that CsLsi1 was localized at the distal side of the endodermis and the cortical cells in the root tips as well as in the root hairs near the root tips. Heterologous expression of CsLsi1 in a rice mutant defective in silicon uptake and the over-expression of this gene in cucumber further confirmed the role of CsLsi1 in silicon uptake. Our results suggest that CsLsi1 is a silicon influx transporter in cucumber. The cellular localization of CsLsi1 in cucumber roots is different from that in other plants, implying the possible effect of transporter localization on silicon uptake capability. © 2016 Scandinavian Plant Physiology Society.

Supercapacitor electrodes based on polyaniline-silicon nanoparticle composite

NASA Astrophysics Data System (ADS)

Liu, Qiang; Nayfeh, Munir H.; Yau, Siu-Tung

A composite material formed by dispersing ultrasmall silicon nanoparticles in polyaniline has been used as the electrode material for supercapacitors. Electrochemical characterization of the composite indicates that the nanoparticles give rise to double-layer capacitance while polyaniline produces pseudocapacitance. The composite shows significantly improved capacitance compared to that of polyaniline. The enhanced capacitance results in high power (220 kW kg -1) and energy-storage (30 Wh kg -1) capabilities of the composite material. A prototype supercapacitor using the composite as the charge storage material has been constructed. The capacitor showed the enhanced capacitance and good device stability during 1000 charging/discharging cycles.

Advanced detectors and signal processing

NASA Technical Reports Server (NTRS)

Greve, D. W.; Rasky, P. H. L.; Kryder, M. H.

1986-01-01

Continued progress is reported toward development of a silicon on garnet technology which would allow fabrication of advanced detection and signal processing circuits on bubble memories. The first integrated detectors and propagation patterns have been designed and incorporated on a new mask set. In addition, annealing studies on spacer layers are performed. Based on those studies, a new double layer spacer is proposed which should reduce contamination of the silicon originating in the substrate. Finally, the magnetic sensitivity of uncontaminated detectors from the last lot of wafers is measured. The measured sensitivity is lower than anticipated but still higher than present magnetoresistive detectors.

Structure analysis of aqueous ferrofluids at interface with silicon: neutron reflectometry data

NASA Astrophysics Data System (ADS)

Gapon, I. V.; Petrenko, V. I.; Bulavin, L. A.; Balasoiu, M.; Kubovcikova, M.; Zavisova, V.; Koneracka, M.; Kopcansky, P.; Chiriac, H.; Avdeev, M. V.

2017-05-01

Adsorption of nanoparticles from aqueous ferrofluids (FFs) on solid surface (crystalline silicon) was studied by neutron reflectometry (NR). Two kinds of FFs were considered. First kind was heavy water-based ferrofluids with magnetite nanoparticles coated by double layer of sodium oleate. Second one FF was cobalt ferrite nanoparticles stabilized by lauric acid/sodium n-dodecylsulphate layer and dispersed in water. It was obtained only a single adsorption layer for two types of ferrofluids. The impact of the magnetic nanoparticles concentration and geometry was considered in frame of the adsorption characteristic of FFs.

Characterization of a fully depleted CCD on high-resistivity silicon

NASA Astrophysics Data System (ADS)

Stover, Richard J.; Wei, Mingzhi; Lee, Y.; Gilmore, David K.; Holland, S. E.; Groom, D. E.; Moses, William W.; Perlmutter, Saul; Goldhaber, G.; Pennypacker, C.; Wang, N. W.; Palaio, N.

1997-04-01

Most scientific CCD imagers are fabricated on 30-50 (Omega) - cm epitaxial silicon. When illuminated form the front side of the device they generally have low quantum efficiency in the blue region of the visible spectrum because of strong absorption in the polycrystalline silicon gates as well as poor quantum efficiency in the far red and near infrared region of the spectrum because of the shallow depletion depth of the low-resistivity silicon. To enhance the blue response of scientific CCDs they are often thinned and illuminated from the back side. While blue response is greatly enhanced by this process, it is expensive and it introduces additional problems for the red end of the spectrum. A typical thinned CCD is 15 to 25 micrometers thick, and at wavelengths beyond about 800 nm the absorption depth becomes comparable to the thickness of the device, leading to interference fringes from reflected light. Because these interference fringes are of high order, the spatial pattern of the fringes is extremely sensitive to small changes in the optical illumination of the detector. Calibration and removal of the effects of the fringes is one of the primary limitations on the performance of astronomical images taken at wavelengths of 800 nm or more. In this paper we present results from the characterization of a CCD which promises to address many of the problems of typical thinned CCDs. The CCD reported on here was fabricated at Lawrence Berkeley National Laboratory (LBNL) on a 10-12 K$OMega-cm n-type silicon substrate.THe CCD is a 200 by 200 15-micrometers square pixel array, and due to the very high resistivity of the starting material, the entire 300 micrometers substrate is depleted. Full depletion works because of the gettering technology developed at LBNL which keeps leakage current down. Both front-side illuminated and backside illuminated devices have been tested. We have measured quantum efficiency, read-noise, full-well, charge-transfer efficiency, and leakage current. We have also observed the effects of clocking waveform shapes on spurious charge generation. While these new CCDs promise to be a major advance in CD technology, they too have limitations such as charge spreading and cosmic-ray effects. These limitations have been characterized and are presented. Examples of astronomical observations obtained with the backside CCD on the 1-meter reflector at Lick Observatory are presented.

Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

NASA Astrophysics Data System (ADS)

Dhar, Sukanta; Mandal, Sourav; Mitra, Suchismita; Ghosh, Hemanta; Mukherjee, Sampad; Banerjee, Chandan; Saha, Hiranmoy; Barua, A. K.

2017-12-01

The advantages of the amorphous silicon (a-Si)/crystalline silicon (c-Si) hetero junction technology are low temperature (<200 °C) processing and fewer process steps to fabricate the device. In this work, we used indium tin oxide (ITO) nanoparticles embedded in amorphous silicon material at the rear side of the crystalline wafer. The nanoparticles were embedded in silicon to have higher scattering efficiency, as has been established by simulation studies. It has been shown that significant photocurrent enhancements (32.8 mA cm-2 to 35.1 mA cm-2) are achieved because of high scattering and coupling efficiency of the embedded nanoparticles into the silicon device, leading to an increase in efficiency from 13.74% to 15.22%. In addition, we have observed a small increase in open circuit voltage. This may be due to the surface passivation during the ITO nanoparticle formation with hydrogen plasma treatment. We also support our experimental results by simulation, with the help of a commercial finite-difference time-domain (FDTD) software solution.

Transmuscular Migration of a Scleral Tunnel-Secured Encircling Silicone Band.

PubMed

Nishida, Yui; Fukumoto, Masanori; Kida, Teruyo; Suzuki, Hiroyuki; Ikeda, Tsunehiko

2016-01-01

The migration of an encircling silicone band through a rectus muscle is a rare postoperative complication associated with scleral buckling surgery for retinal detachment. In this present study, we describe what we believe to be the first reported case of a patient who experienced postoperative migration of an encircling silicone band through the rectus muscle, despite the band being surgically secured to the sclera in a scleral tunnel. A 58-year-old man presented with a rhegmatogenous retinal detachment in his left eye. Pars plana vitrectomy was performed with the placement of an encircling silicone band, and the patient's retina was successfully reattached. One year postoperatively, the encircling band became exposed on the nasal side of the conjunctiva next to the limbus without any symptoms. Two weeks later, the exposed encircling band was surgically removed without any complications. The findings of this study show that even when an encircling silicone band is surgically secured around the eye, periodic and careful postoperative follow-up examinations should be performed to ensure no migration of the band.

Determination of effective mechanical properties of a double-layer beam by means of a nano-electromechanical transducer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hocke, Fredrik; Pernpeintner, Matthias; Gross, Rudolf, E-mail: rudolf.gross@wmi.badw.de

We investigate the mechanical properties of a doubly clamped, double-layer nanobeam embedded into an electromechanical system. The nanobeam consists of a highly pre-stressed silicon nitride and a superconducting niobium layer. By measuring the mechanical displacement spectral density both in the linear and the nonlinear Duffing regime, we determine the pre-stress and the effective Young's modulus of the nanobeam. An analytical double-layer model quantitatively corroborates the measured values. This suggests that this model can be used to design mechanical multilayer systems for electro- and optomechanical devices, including materials controllable by external parameters such as piezoelectric, magnetostrictive, or in more general multiferroicmore » materials.« less

Parallel electric fields in extragalactic jets - Double layers and anomalous resistivity in symbiotic relationships

NASA Technical Reports Server (NTRS)

Borovsky, J. E.

1986-01-01

After examining the properties of Coulomb-collision resistivity, anomalous (collective) resistivity, and double layers, a hybrid anomalous-resistivity/double-layer model is introduced. In this model, beam-driven waves on both sides of a double layer provide electrostatic plasma-wave turbulence that greatly reduces the mobility of charged particles. These regions then act to hold open a density cavity within which the double layer resides. In the double layer, electrical energy is dissipated with 100 percent efficiency into high-energy particles, creating conditions optimal for the collective emission of polarized radio waves.

Pressure garment therapy alone and in combination with silicone for the prevention of hypertrophic scarring: randomized controlled trial with intraindividual comparison.

PubMed

Steinstraesser, Lars; Flak, Ewa; Witte, Bernd; Ring, Andrej; Tilkorn, Daniel; Hauser, Jörg; Langer, Stefan; Steinau, Hans-Ulrich; Al-Benna, Sammy

2011-10-01

Published trials evaluating pressure garment and/or silicone therapy as a treatment for hypertrophic burn scarring are of poor quality and highly susceptible to bias. The authors' aim was to compare the efficacy of pressure garment therapy alone and in combination with silicone gel sheet or spray therapy for the prevention of hypertrophic scarring. The authors conducted an open, single-center, randomized controlled study with intraindividual comparison of study preparations and control to standard treatment. Forty-three consecutive patients with two comparable areas of split-thickness graft burn wounds were recruited into the study, and 38 patients were followed up for 18 months. All patients received compression garments and were randomized to one of two treatment groups: (1) self-drying silicone spray and compression versus compression alone and (2) silicone sheeting and compression versus compression alone. Clinical assessment, measurement of scar redness, height, and photographic documentation of each treated area were performed at different visits over an 18-month follow-up period. Significance was tested using repeated-measures analyses and Wilcoxon paired-sample signed rank tests. Use of pressure garment therapy alone produced results equivalent to those of combined silicone and pressure garment therapy in the prevention of hypertrophic scars. The efficacy of silicone spray therapy was comparable to that of silicone gel sheet therapy in the prevention of hypertrophic scars. Patients treated with silicone spray had fewer side effects when compared with the silicone sheet group. Multimodal therapy with silicone and pressure garment therapy failed to prevent hypertrophic scars beyond that observed with pressure garment therapy alone. Therapeutic, II.

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

PubMed

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Effect of Binder Architecture on the Performance of Silicon/Graphite Composite Anodes for Lithium Ion Batteries

DOE PAGES

Cao, Peng-Fei; Naguib, Michael; Du, Zhijia; ...

2018-01-04

Although significant progress has been made in improving cycling performance of silicon-based electrodes, few studies have been performed on the architecture effect on polymer binder performance for lithium-ion batteries. A systematic study on the relationship between polymer architectures and binder performance is especially useful in designing synthetic polymer binders. In this paper, a graft block copolymer with readily tunable architecture parameters is synthesized and tested as the polymer binder for the high-mass loading silicon (15 wt %)/graphite (73 wt %) composite electrode (active materials >2.5 mg/cm 2). With the same chemical composition and functional group ratio, the graft block copolymermore » reveals improved cycling performance in both capacity retention (495 mAh/g vs 356 mAh/g at 100th cycle) and Coulombic efficiency (90.3% vs 88.1% at first cycle) than the physical mixing of glycol chitosan (GC) and lithium polyacrylate (LiPAA). Galvanostatic results also demonstrate the significant impacts of different architecture parameters of graft copolymers, including grafting density and side chain length, on their ultimate binder performance. Finally, by simply changing the side chain length of GC-g-LiPAA, the retaining delithiation capacity after 100 cycles varies from 347 mAh/g to 495 mAh/g.« less

Surface micro-structuring of silicon by excimer-laser irradiation in reactive atmospheres

NASA Astrophysics Data System (ADS)

Pedraza, A. J.; Fowlkes, J. D.; Jesse, S.; Mao, C.; Lowndes, D. H.

2000-12-01

The formation mechanisms of cones and columns by pulsed-laser irradiation in reactive atmospheres were studied using scanning electron microscopy and profilometry. Deep etching takes place in SF6- and O2- rich atmospheres and consequently, silicon-containing molecules and clusters are released. Transport of silicon from the etched/ablated regions to the tip of columns and cones and to the side of the cones is required because both structures, columns and cones, protrude above the initial surface. The laser-induced micro-structure is influenced not only by the nature but also by the partial pressure of the reactive gas in the atmosphere. Irradiation in Ar following cone formation in SF6 produced no additional growth but rather melting and resolidification. Subsequent irradiation using again a SF6 atmosphere lead to cone restructuring and growth resumption. Thus the effects of etching plus re-deposition that produce column/cone formation and growth are clearly separated from the effects of just melting. On the other hand, irradiation continued in air after first performed in SF6 resulted in: (a) an intense etching of the cones and a tendency to transform them into columns; (b) growth of new columns on top of the existing cones and (c) filamentary nano-structures coating the sides of the columns and cones.

Effect of Binder Architecture on the Performance of Silicon/Graphite Composite Anodes for Lithium Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Peng-Fei; Naguib, Michael; Du, Zhijia

Although significant progress has been made in improving cycling performance of silicon-based electrodes, few studies have been performed on the architecture effect on polymer binder performance for lithium-ion batteries. A systematic study on the relationship between polymer architectures and binder performance is especially useful in designing synthetic polymer binders. In this paper, a graft block copolymer with readily tunable architecture parameters is synthesized and tested as the polymer binder for the high-mass loading silicon (15 wt %)/graphite (73 wt %) composite electrode (active materials >2.5 mg/cm 2). With the same chemical composition and functional group ratio, the graft block copolymermore » reveals improved cycling performance in both capacity retention (495 mAh/g vs 356 mAh/g at 100th cycle) and Coulombic efficiency (90.3% vs 88.1% at first cycle) than the physical mixing of glycol chitosan (GC) and lithium polyacrylate (LiPAA). Galvanostatic results also demonstrate the significant impacts of different architecture parameters of graft copolymers, including grafting density and side chain length, on their ultimate binder performance. Finally, by simply changing the side chain length of GC-g-LiPAA, the retaining delithiation capacity after 100 cycles varies from 347 mAh/g to 495 mAh/g.« less

CMOS-compatible spot-size converter for optical fiber to sub-μm silicon waveguide coupling with low-loss low-wavelength dependence and high tolerance to misalignment

NASA Astrophysics Data System (ADS)

Picard, Marie-Josée.; Latrasse, Christine; Larouche, Carl; Painchaud, Yves; Poulin, Michel; Pelletier, François; Guy, Martin

2016-03-01

One of the biggest challenges of silicon photonics is the efficient coupling of light between the sub-micron SiP waveguides and a standard optical fiber (SMF-28). We recently proposed a novel approach based on a spot-size converter (SSC) that fulfills this need. The SSC integrates a tapered silicon waveguide and a superimposed structure made of a plurality of rods of high index material, disposed in an array-like configuration and embedded in a cladding of lower index material. This superimposed structure defines a waveguide designed to provide an efficient adiabatic transfer, through evanescent coupling, to a 220 nm thick Si waveguide tapered down to a narrow tip on one side, while providing a large mode overlap to the optical fiber on the other side. An initial demonstration was made using a SSC fabricated with post-processing steps. Great coupling to a SMF-28 fiber with a loss of 0.6 dB was obtained for TEpolarized light at 1550 nm with minimum wavelength dependence. In this paper, SSCs designed for operation at 1310 and 1550 nm for TE/TM polarizations and entirely fabricated in a CMOS fab are presented.

Interactive High-Relief Reconstruction for Organic and Double-Sided Objects from a Photo.

PubMed

Yeh, Chih-Kuo; Huang, Shi-Yang; Jayaraman, Pradeep Kumar; Fu, Chi-Wing; Lee, Tong-Yee

2017-07-01

We introduce an interactive user-driven method to reconstruct high-relief 3D geometry from a single photo. Particularly, we consider two novel but challenging reconstruction issues: i) common non-rigid objects whose shapes are organic rather than polyhedral/symmetric, and ii) double-sided structures, where front and back sides of some curvy object parts are revealed simultaneously on image. To address these issues, we develop a three-stage computational pipeline. First, we construct a 2.5D model from the input image by user-driven segmentation, automatic layering, and region completion, handling three common types of occlusion. Second, users can interactively mark-up slope and curvature cues on the image to guide our constrained optimization model to inflate and lift up the image layers. We provide real-time preview of the inflated geometry to allow interactive editing. Third, we stitch and optimize the inflated layers to produce a high-relief 3D model. Compared to previous work, we can generate high-relief geometry with large viewing angles, handle complex organic objects with multiple occluded regions and varying shape profiles, and reconstruct objects with double-sided structures. Lastly, we demonstrate the applicability of our method on a wide variety of input images with human, animals, flowers, etc.

Double versus single stenting for coronary bifurcation lesions: a meta-analysis.

PubMed

Katritsis, Demosthenes G; Siontis, George C M; Ioannidis, John P A

2009-10-01

Several trials have addressed whether bifurcation lesions require stenting of both the main vessel and side branch, but uncertainty remains on the benefits of such double versus single stenting of the main vessel only. We have conducted a meta-analysis of randomized trials including patients with coronary bifurcation lesions who were randomly selected to undergo percutaneous coronary intervention by either double or single stenting. Six studies (n=1642 patients) were eligible. There was increased risk of myocardial infarction with double stenting (risk ratio, 1.78; P=0.001 by fixed effects; risk ratio, 1.49 with Bayesian meta-analysis). The summary point estimate suggested also an increased risk of stent thrombosis with double stenting, but the difference was not nominally significant given the sparse data (risk ratio, 1.85; P=0.19). No obvious difference was seen for death (risk ratio, 0.81; P=0.66) and target lesion revascularization (risk ratio, 1.09; P=0.67). Stenting of both the main vessel and side branch in bifurcation lesions may increase myocardial infarction and stent thrombosis risk compared with stenting of the main vessel only.

First results on DEPFET Active Pixel Sensors fabricated in a CMOS foundry—a promising approach for new detector development and scientific instrumentation

NASA Astrophysics Data System (ADS)

Aschauer, S.; Majewski, P.; Lutz, G.; Soltau, H.; Holl, P.; Hartmann, R.; Schlosser, D.; Paschen, U.; Weyers, S.; Dreiner, S.; Klusmann, M.; Hauser, J.; Kalok, D.; Bechteler, A.; Heinzinger, K.; Porro, M.; Titze, B.; Strüder, L.

2017-11-01

DEPFET Active Pixel Sensors (APS) have been introduced as focal plane detectors for X-ray astronomy already in 1996. Fabricated on high resistivity, fully depleted silicon and back-illuminated they can provide high quantum efficiency and low noise operation even at very high read rates. In 2009 a new type of DEPFET APS, the DSSC (DEPFET Sensor with Signal Compression) was developed, which is dedicated to high-speed X-ray imaging at the European X-ray free electron laser facility (EuXFEL) in Hamburg. In order to resolve the enormous contrasts occurring in Free Electron Laser (FEL) experiments, this new DSSC-DEPFET sensor has the capability of nonlinear amplification, that is, high gain for low intensities in order to obtain single-photon detection capability, and reduced gain for high intensities to achieve high dynamic range for several thousand photons per pixel and frame. We call this property "signal compression". Starting in 2015, we have been fabricating DEPFET sensors in an industrial scale CMOS foundry maintaining the outstanding proven DEPFET properties and adding new capabilities due to the industrial-scale CMOS process. We will highlight these additional features and describe the progress achieved so far. In a first attempt on double-sided polished 725 μm thick 200 mm high resistivity float zone silicon wafers all relevant device related properties have been measured, such as leakage current, depletion voltage, transistor characteristics, noise and energy resolution for X-rays and the nonlinear response. The smaller feature size provided by the new technology allows for an advanced design and significant improvements in device performance. A brief summary of the present status will be given as well as an outlook on next steps and future perspectives.

Microelectromechanical systems (MEMS) sensors based on lead zirconate titanate (PZT) films

NASA Astrophysics Data System (ADS)

Wang, Li-Peng

2001-12-01

In this thesis, modeling, fabrication and testing of microelectromechanical systems (MEMS) accelerometers based on piezoelectric lead zirconate titanate (PZT) films are investigated. Three different types of structures, cantilever beam, trampoline, and annular diaphragm, are studied. It demonstrates the high-performance, miniaturate, mass-production-compatible, and potentially circuitry-integratable piezoelectric-type PZT MEMS devices. Theoretical models of the cantilever-beam and trampoline accelerometers are derived via structural dynamics and the constitutive equations of piezoelectricity. The time-dependent transverse vibration equations, mode shapes, resonant frequencies, and sensitivities of the accelerometers are calculated through the models. Optimization of the silicon and PZT thickness is achieved with considering the effects of the structural dynamics, the material properties, and manufacturability for different accelerometer specifications. This work is the first demonstration of the fabrication of bulk-micromachined accelerometers combining a deep-trench reactive ion etching (DRIE) release strategy and thick piezoelectric PZT films deposited using a sol-gel method. Processing challenges which are overcome included materials compatibility, metallization, processing of thick layers, double-side processing, deep-trench silicon etching, post-etch cleaning and process integration. In addition, the processed PZT films are characterized by dielectric, ferroelectric (polarization electric-field hysteresis), and piezoelectric measurements and no adverse effects are found. Dynamic frequency response and impedance resonance measurements are performed to ascertain the performance of the MEMS accelerometers. The results show high sensitivities and broad frequency ranges of the piezoelectric-type PZT MEMS accelerometers; the sensitivities range from 0.1 to 7.6 pC/g for resonant frequencies ranging from 44.3 kHz to 3.7 kHz. The sensitivities were compared to theoretical values and a reasonable agreement (˜36% difference) is obtained.

Pneumatically Actuated Miniature Peristaltic Vacuum Pumps

NASA Technical Reports Server (NTRS)

Feldman, Sabrina; Feldman, Jason; Svehla, Danielle

2003-01-01

Pneumatically actuated miniature peristaltic vacuum pumps have been proposed for incorporation into advanced miniature versions of scientific instruments that depend on vacuum for proper operation. These pumps are expected to be capable of reaching vacuum-side pressures in the torr to millitorr range (from .133 down to .0.13 Pa). Vacuum pumps that operate in this range are often denoted roughing pumps. In comparison with previously available roughing pumps, these pumps are expected to be an order of magnitude less massive and less power-hungry. In addition, they would be extremely robust, and would operate with little or no maintenance and without need for oil or other lubricants. Portable mass spectrometers are typical examples of instruments that could incorporate the proposed pumps. In addition, the proposed pumps could be used as roughing pumps in general laboratory applications in which low pumping rates could be tolerated. The proposed pumps could be designed and fabricated in conventionally machined and micromachined versions. A typical micromachined version (see figure) would include a rigid glass, metal, or plastic substrate and two layers of silicone rubber. The bottom silicone layer would contain shallow pump channels covered by silicone arches that could be pushed down pneumatically to block the channels. The bottom silicone layer would be covered with a thin layer of material with very low gas permeability, and would be bonded to the substrate everywhere except in the channel areas. The top silicone layer would be attached to the bottom silicone layer and would contain pneumatic- actuation channels that would lie crosswise to the pump channels. This version is said to be micromachined because the two silicone layers containing the channels would be fabricated by casting silicone rubber on micromachined silicon molds. The pneumatic-actuation channels would be alternately connected to a compressed gas and (depending on pump design) either to atmospheric pressure or to a partial vacuum source. The design would be such that the higher pneumatic pressure would be sufficient to push the silicone arches down onto the substrates, blocking the channels. Thus, by connecting pneumatic- actuation channels to the two pneumatic sources in spatial and temporal alternation, waves of opening and closing, equivalent to peristalsis, could be made to move along the pump channels. A pump according to this concept could be manufactured inexpensively. Pneumatic sources (compressors and partial vacuum sources) similar those needed for actuation are commercially available; they typically have masses of .100 g and power demands of the order of several W. In a design-optimization effort, it should be possible to reduce masses and power demands below even these low levels and to integrate pneumatic sources along with the proposed pumps into miniature units with overall dimensions of no more than a few centimeters per side.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

NASA Astrophysics Data System (ADS)

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J.; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E.; Iacopi, Francesca

2015-10-01

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square-1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g-1. This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors.

PubMed

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E; Iacopi, Francesca

2015-10-30

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square(-1) from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g(-1). This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS

NASA Astrophysics Data System (ADS)

Syms, Richard R. A.; Liu, Dixi; Ahmad, Munir M.

2017-07-01

Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young’s moduli and effective Poisson’s ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson’s ratio are verified and failure patterns are described.

2. Southern Light Tower and Northern Light Tower, view north, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

2. Southern Light Tower and Northern Light Tower, view north, south sides - Kennebec River Light Station, South side of Doubling Point Road, off State Highway 127, 1.8 miles south of U.S. Route 1, Arrowsic, Sagadahoc County, ME

Multi-layered nanocomposite dielectrics for high density organic memory devices

NASA Astrophysics Data System (ADS)

Kang, Moonyeong; Chung, Kyungwha; Baeg, Kang-Jun; Kim, Dong Ha; Kim, Choongik

2015-01-01

We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (ΔVth).

Modeling Slab-Slab Interactions: Dynamics of Outward Dipping Double-Sided Subduction Systems

NASA Astrophysics Data System (ADS)

Király, Ágnes; Holt, Adam F.; Funiciello, Francesca; Faccenna, Claudio; Capitanio, Fabio A.

2018-03-01

Slab-slab interaction is a characteristic feature of tectonically complex areas. Outward dipping double-sided subduction is one of these complex cases, which has several examples on Earth, most notably the Molucca Sea and Adriatic Sea. This study focuses on developing a framework for linking plate kinematics and slab interactions in an outward dipping subduction geometry. We used analog and numerical models to better understand the underlying subduction dynamics. Compared to a single subduction model, double-sided subduction exhibits more time-dependent and vigorous toroidal flow cells that are elongated (i.e., not circular). Because both the Molucca and Adriatic Sea exhibit an asymmetric subduction configuration, we also examine the role that asymmetry plays in the dynamics of outward dipping double-sided subduction. We introduce asymmetry in two ways; with variable initial depths for the two slabs ("geometric" asymmetry), and with variable buoyancy within the subducting plate ("mechanical" asymmetry). Relative to the symmetric case, we probe how asymmetry affects the overall slab kinematics, whether asymmetric behavior intensifies or equilibrates as subduction proceeds. While initial geometric asymmetry disappears once the slabs are anchored to the 660 km discontinuity, the mechanical asymmetry can cause more permanent differences between the two subduction zones. In the most extreme case, the partly continental slab stops subducting due to the unequal slab pull force. The results show that the slab-slab interaction is most effective when the two trenches are closer than 10-8 cm in the laboratory, which is 600-480 km when scaled to the Earth.

Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jo, Mingyu, E-mail: mingyujo@eis.hokudai.ac.jp; Uchida, Takafumi; Tsurumaki-Fukuchi, Atsushi

2015-12-07

A triple-dot single-electron transistor was fabricated on silicon-on-insulator wafer using pattern-dependent oxidation. A specially designed one-dimensional silicon wire having small constrictions at both ends was converted to a triple-dot single-electron transistor by means of pattern-dependent oxidation. The fabrication of the center dot involved quantum size effects and stress-induced band gap reduction, whereas that of the two side dots involved thickness modulation because of the complex edge structure of two-dimensional silicon. Single-electron turnstile operation was confirmed at 8 K when a 100-mV, 1-MHz square wave was applied. Monte Carlo simulations indicated that such a device with inhomogeneous tunnel and gate capacitances canmore » exhibit single-electron transfer.« less

Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods

PubMed Central

Lou, Shishu; Zhu, Huishi; Hu, Shaoxu; Zhao, Chunhua; Han, Peide

2015-01-01

Characterization of the diffusion length of solar cells in space has been widely studied using various methods, but few studies have focused on a fast, simple way to obtain the quantified diffusion length distribution on a silicon wafer. In this work, we present two different facile methods of doing this by fitting photoluminescence images taken in two different wavelength ranges or from different sides. These methods, which are based on measuring the ratio of two photoluminescence images, yield absolute values of the diffusion length and are less sensitive to the inhomogeneity of the incident laser beam. A theoretical simulation and experimental demonstration of this method are presented. The diffusion length distributions on a polycrystalline silicon wafer obtained by the two methods show good agreement. PMID:26364565

An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET.

PubMed

Jang, Taejin; Baek, Myung-Hyun; Kim, Hyungjin; Park, Byung-Gook

2018-09-01

In this paper, we demonstrate the characteristics of the floating body effect of poly-silicon with grain boundary by SENTAURUS™ TCAD simulation. As drain voltage increases, impact ionization occurs at the drain-channel junction. And these holes created by impact ionization are deposited on the bottom of the body to change the threshold voltage. This feature, the kink effect, is also observed in fully depleted silicon on insulator because grain boundary of the poly-silicon serve as a storage to trap the holes. We simulate the transfer curve depending on the density and position of the grain boundary. The trap density of the grain boundary affects the device characteristics significantly. However similar properties appear except where the grain boundary is located on the drain side.

Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

DOEpatents

Li, Zheng; Chen, Wei

2016-07-05

A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

Design of a portable near infrared system for topographic imaging of the brain in babies

NASA Astrophysics Data System (ADS)

Vaithianathan, Tharshan; Tullis, Iain D. C.; Everdell, Nicholas; Leung, Terence; Gibson, Adam; Meek, Judith; Delpy, David T.

2004-10-01

A portable topographic near-infrared spectroscopic (NIRS) imaging system has been developed to provide real-time temporal and spatial information about the cortical response to stimulation in unrestrained infants. The optical sensing array is lightweight, flexible, and easy to apply to infants ranging from premature babies in intensive care to children in a normal environment. The sensor pad consists of a flexible double-sided circuit board onto which are mounted multiple sources (light-emitting diodes) and multiple detectors (p-i-n photodiodes), all electrically encapsulated in silicone rubber. The control electronics are housed in a box with a medical grade isolated power supply and linked to a PC fitted with a data acquisition card, the signal acquisition and analysis being performed using LABVIEW™. The signal output is displayed as an image of oxy- and deoxyhemoglobin concentration ([HbO2], [Hb]) changes at a frame rate of 3 Hz. Experiments have been conducted on phantoms to determine the sensitivity of the system, and the results have been compared to theoretical simulations. The system has been tested in volunteers by imaging changes in forearm muscle oxygenation, following blood pressure cuff occlusion to obtain typical [Hb] and [HbO2] plots.

Late Quaternary to Holocene Geology, Geomorphology and Glacial History of Dawson Creek and Surrounding area, Northeast British Columbia, Canada

NASA Astrophysics Data System (ADS)

Henry, Edward Trowbridge

Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed. This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation. Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here. The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.

Nonlinear stability research on the hydraulic system of double-side rolling shear.

PubMed

Wang, Jun; Huang, Qingxue; An, Gaocheng; Qi, Qisong; Sun, Binyu

2015-10-01

This paper researches the stability of the nonlinear system taking the hydraulic system of double-side rolling shear as an example. The hydraulic system of double-side rolling shear uses unsymmetrical electro-hydraulic proportional servo valve to control the cylinder with single piston rod, which can make best use of the space and reduce reversing shock. It is a typical nonlinear structure. The nonlinear state-space equations of the unsymmetrical valve controlling cylinder system are built first, and the second Lyapunov method is used to evaluate its stability. Second, the software AMEsim is applied to simulate the nonlinear system, and the results indicate that the system is stable. At last, the experimental results show that the system unsymmetrical valve controlling the cylinder with single piston rod is stable and conforms to what is deduced by theoretical analysis and simulation. The construction and application of Lyapunov function not only provide the theoretical basis for using of unsymmetrical valve controlling cylinder with single piston rod but also develop a new thought for nonlinear stability evaluation.

Nonlinear stability research on the hydraulic system of double-side rolling shear

NASA Astrophysics Data System (ADS)

Wang, Jun; Huang, Qingxue; An, Gaocheng; Qi, Qisong; Sun, Binyu

2015-10-01

This paper researches the stability of the nonlinear system taking the hydraulic system of double-side rolling shear as an example. The hydraulic system of double-side rolling shear uses unsymmetrical electro-hydraulic proportional servo valve to control the cylinder with single piston rod, which can make best use of the space and reduce reversing shock. It is a typical nonlinear structure. The nonlinear state-space equations of the unsymmetrical valve controlling cylinder system are built first, and the second Lyapunov method is used to evaluate its stability. Second, the software AMEsim is applied to simulate the nonlinear system, and the results indicate that the system is stable. At last, the experimental results show that the system unsymmetrical valve controlling the cylinder with single piston rod is stable and conforms to what is deduced by theoretical analysis and simulation. The construction and application of Lyapunov function not only provide the theoretical basis for using of unsymmetrical valve controlling cylinder with single piston rod but also develop a new thought for nonlinear stability evaluation.

Scalable photonic quantum computing assisted by quantum-dot spin in double-sided optical microcavity.

PubMed

Wei, Hai-Rui; Deng, Fu-Guo

2013-07-29

We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.

Fabrication and characterization of high-efficiency double-sided blazed x-ray optics.

PubMed

Mohacsi, Istvan; Vartiainen, Ismo; Guizar-Sicairos, Manuel; Karvinen, Petri; Guzenko, Vitaliy A; Müller, Elisabeth; Kewish, Cameron M; Somogyi, Andrea; David, Christian

2016-01-15

The focusing efficiency of conventional diffractive x-ray lenses is fundamentally limited due to their symmetric binary structures and the corresponding symmetry of their focusing and defocusing diffraction orders. Fresnel zone plates with asymmetric structure profiles can break this limitation; yet existing implementations compromise either on resolution, ease of use, or stability. We present a new way for the fabrication of such blazed lenses by patterning two complementary binary Fresnel zone plates on the front and back sides of the same membrane chip to provide a compact, inherently stable, single-chip device. The presented blazed double-sided zone plates with 200 nm smallest half-pitch provide up to 54.7% focusing efficiency at 6.2 keV, which is clearly beyond the value obtainable by their binary counterparts.

Impact-Resistant Ceramic Coating

NASA Technical Reports Server (NTRS)

Wheeler, W. H.; Creedon, J. F.; Izu, Y. D.

1986-01-01

Refractory fibers more than double strength of coating. Impact strengths of ceramic coatings increase with increasing whisker content. Silicon carbide whiskers clearly produce largest increase, and improvement grows even more with high-temperature sintering. Coating also improves thermal and mechanical properties of electromagnetic components, mirrors, furnace linings, and ceramic parts of advanced internal-combustion engines.

A novel control strategy for enhancing the LVRT and voltage support capabilities of DFIG

NASA Astrophysics Data System (ADS)

Shen, Yangwu; Zhang, Bin; Liang, Liqing; Cui, Ting

2018-02-01

A novel integrated control strategy is proposed in this paper to enhance the low voltage ride through capacity for the double-fed induction generator by equipping an energy storage system. The energy storage system is installed into the DC-link capacitor of the DFIG and used to control the DC-link voltage during normal or transient operations. The energy storage device will absorb or compensate the power difference between the captured wind power and the power injected to the grid during the normal and transient period, and the grid side converter can be free from maintaining the voltage stability of the DC-link capacitor. Thus, the grid-side converter is changed to reactive power support while the rotor-side converter is used to control the maximum power production during normal operation. The grid-side converter and rotor-side converter will act as reactive power sources to further enhance the voltage support capability of double-fed induction generator during the transient period. Numerical Simulation are performed to validate the effectiveness of the proposed control designs.

Incidence of double ovulation during the early postpartum period in lactating dairy cows.

PubMed

Kusaka, Hiromi; Miura, Hiroshi; Kikuchi, Motohiro; Sakaguchi, Minoru

2017-03-15

In lactating cattle, the incidence of twin calving has many negative impacts on production and reproduction in dairy farming. In almost all cases, natural twinning in dairy cattle is the result of double ovulation. It has been suggested that the milk production level of cows influences the number of ovulatory follicles. The objective of the present study was to investigate the incidence of double ovulations during the early postpartum period in relation to the productive and reproductive performance of dairy cows. The ovaries of 43 Holstein cows (26 primiparous and 17 multiparous) were ultrasonographically scanned throughout the three postpartum ovulation sequences. The incidence of double ovulation in the unilateral ovaries was 66.7%, with a higher incidence in the right ovary than in the left, whereas that in bilateral ovaries was 33.3%. When double ovulations were counted dividing into each side ovary in which ovulations occurred, the total frequency of ovulations deviated from a 1:1 ratio (60.3% in the right side and 39.7% in the left side, P < 0.05). In multiparous cows, double ovulation occurred more frequently than in primiparous cows (58.8% vs. 11.5% per cow and 30.0% vs. 3.8% per ovulation, respectively P < 0.01). The double ovulators experienced more anovulatory repeated waves of follicles before their first ovulations than the single ovulators, which resulted in an extension of the period from parturition to third ovulation (81.5 days vs. 64.2 days, P < 0.05). In the multiparous cows, the double ovulators exhibited higher peak milk yield (P < 0.01) with lower milk lactose concentration (P < 0.05), indicating the prevalence of a more severe negative energy balance during the postpartum 3-month compared to the multiparous single ovulators. Our results showed that, regardless of their parity, double ovulation had no impact on the reproductive performance of the cows. Two multiparous cows that experienced double ovulation during the early postpartum period subsequently conceived twin fetuses. It can be speculated that the incidence of double ovulations during the early postpartum period partly contributes to the increased incidence of undesirable twin births in multiparous dairy cows. Copyright © 2016. Published by Elsevier Inc.

11. INTERIOR OF WEST SIDE ENCLOSED SCREEN PORCH IN OPPOSITE ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

11. INTERIOR OF WEST SIDE ENCLOSED SCREEN PORCH IN OPPOSITE VIEW FROM CA-167-A-8. DOUBLE FRENCH DOORS LEAD TO BEDROOM #2. VIEW TO NORTHEAST. - Big Creek Hydroelectric System, Powerhouse 8, Operator Cottage, Big Creek, Big Creek, Fresno County, CA

Impurity gettering in silicon using cavities formed by helium implantation and annealing

DOEpatents

Myers, Jr., Samuel M.; Bishop, Dawn M.; Follstaedt, David M.

1998-01-01

Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer.

Impurity gettering in silicon using cavities formed by helium implantation and annealing

DOEpatents

Myers, S.M. Jr.; Bishop, D.M.; Follstaedt, D.M.

1998-11-24

Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer. 4 figs.

Slicing of silicon into sheet material: Silicon sheet growth development for the large area silicon sheet task of the Low Cost Silicon Solar Array project

NASA Technical Reports Server (NTRS)

Fleming, J. R.

1978-01-01

The limits of blade tolerance were defined. The standard blades are T-2 thickness tolerance. Good results were obtained by using a slurry fluid consisting of mineral oil and a lubricity additive. Adjustments of the formulation and fine tuning of the cutting process with the new fluid are necessary. Test results and consultation indicate that the blade breakage encountered with water based slurries is unavoidable. Two full capacity (974 wafer) runs were made on the large prototype saw. Both runs resulted in extremely low yield. However, the reasons for the low yield were lack of proper technique rather than problems with machine function. The test on the effect of amount of material etched off of an as-sawn wafer on solar cell efficiency were completed. The results agree with previous work at JPL in that the minimum material removed per side that gives maximum efficiency is on the order of 10 microns.

11. Corner of Derrick Showing Bolted Joints and DoublePipe/Wood Beam ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

11. Corner of Derrick Showing Bolted Joints and Double-Pipe/Wood Beam Support For Bull Wheel, Looking Southeast - David Renfrew Oil Rig, East side of Connoquenessing Creek, 0.4 mile North of confluence with Thorn Creek, Renfrew, Butler County, PA

ANTERIOR CRUCIATE LIGAMENT RECONSTRUCTION USING THE DOUBLE-BUNDLE TECHNIQUE – EVALUATION IN THE BIOMECHANICS LABORATORY

PubMed Central

D'Elia, Caio Oliveira; Bitar, Alexandre Carneiro; Castropil, Wagner; Garofo, Antônio Guilherme Padovani; Cantuária, Anita Lopes; Orselli, Maria Isabel Veras; Luques, Isabela Ugo; Duarte, Marcos

2015-01-01

Objective: The objective of this study was to describe the methodology of knee rotation analysis using biomechanics laboratory instruments and to present the preliminary results from a comparative study on patients who underwent anterior cruciate ligament (ACL) reconstruction using the double-bundle technique. Methods: The protocol currently used in our laboratory was described. Three-dimensional kinematic analysis was performed and knee rotation amplitude was measured on eight normal patients (control group) and 12 patients who were operated using the double-bundle technique, by means of three tasks in the biomechanics laboratory. Results: No significant differences between operated and non-operated sides were shown in relation to the mean amplitudes of gait, gait with change in direction or gait with change in direction when going down stairs (p > 0.13). Conclusion: The preliminary results did not show any difference in the double-bundle ACL reconstruction technique in relation to the contralateral side and the control group. PMID:27027003

Bedmap2; Mapping, visualizing and communicating the Antarctic sub-glacial environment.

NASA Astrophysics Data System (ADS)

Fretwell, Peter; Pritchard, Hamish

2013-04-01

Bedmap2; Mapping, visualizing and communicating the Antarctic sub-glacial environment. The Bedmap2 project has been a large cooperative effort to compile, model, map and visualize the ice-rock interface beneath the Antarctic ice sheet. Here we present the final output of that project; the Bedmap2 printed map. The map is an A1, double sided print, showing 2d and 3d visualizations of the dataset. It includes scientific interpretations, cross sections and comparisons with other areas. Paper copies of the colour double sided map will be freely distributed at this session.

Placement of percutaneous transhepatic biliary stent using a silicone drain with channels

PubMed Central

Yoshida, Hiroshi; Mamada, Yasuhiro; Taniai, Nobuhiko; Mineta, Sho; Mizuguchi, Yoshiaki; Kawano, Yoichi; Sasaki, Junpei; Nakamura, Yoshiharu; Aimoto, Takayuki; Tajiri, Takashi

2009-01-01

This report describes a method for percutaneous transhepatic biliary stenting with a BLAKE Silicone Drain, and discusses the usefulness of placement of the drain connected to a J-VAC Suction Reservoir for the treatment of stenotic hepaticojejunostomy. Percutaneous transhepatic biliary drainage was performed under ultrasonographic guidance in a patient with stenotic hepaticojejunostomy after hepatectomy for hepatic hilum malignancy. The technique used was as follows. After dilatation of the drainage root, an 11-Fr tube with several side holes was passed through the stenosis of the hepaticojejunostomy. A 10-Fr BLAKE Silicone Drain is flexible, which precludes one-step insertion. One week after insertion of the 11-Fr tube, a 0.035-inch guidewire was inserted into the tube. After removal of the 11-Fr tube, the guidewire was put into the channel of a 10-Fr BLAKE Silicone Drain. The drain was inserted into the jejunal limb through the intrahepatic bile duct and was connected to a J-VAC Suction Reservoir. Low-pressure continued suction was applied. Patients can be discharged after insertion of the 10-Fr BLAKE Silicone Drain connected to the J-VAC Suction Reservoir. Placement of a percutaneous transhepatic biliary stent using a 10-Fr BLAKE Silicone Drain connected to a J-VAC Suction Reservoir is useful for the treatment of stenotic hepaticojejunostomy. PMID:19725159

Effects of Double-Leakage Tip Clearance Flow on the Performance of a Compressor Stage with a Large Rotor Tip Gap

NASA Technical Reports Server (NTRS)

Hah, Chunill

2016-01-01

Effects of a large rotor tip gap on the performance of a one and half stage axial compressor are investigated in detail with a numerical simulation based on LES and available PIV data. The current paper studies the main flow physics, including why and how the loss generation is increased with the large rotor tip gap. The present study reveals that when the tip gap becomes large, tip clearance fluid goes over the tip clearance core vortex and enters into the next blade's tip gap, which is called double-leakage tip clearance flow. As the tip clearance flow enters into the adjacent blade's tip gap, a vortex rope with a lower pressure core is generated. This vortex rope breaks up the tip clearance core vortex of the adjacent blade, resulting in a large additional mixing. This double-leakage tip clearance flow occurs at all operating conditions, from design flow to near stall condition, with the large tip gap for the current compressor stage. The double-leakage tip clearance flow, its interaction with the tip clearance core vortex of the adjacent blade, and the resulting large mixing loss are the main flow mechanism of the large rotor tip gap in the compressor. When the tip clearance is smaller, flow near the end wall follows more closely with the main passage flow and this double-leakage tip clearance flow does not happen near the design flow condition for the current compressor stage. When the compressor with a large tip gap operates at near stall operation, a strong vortex rope is generated near the leading edge due to the double-leakage flow. Part of this vortex separates from the path of the tip clearance core vortex and travels from the suction side of the blade toward the pressure side of the blade. This vortex is generated periodically at near stall operation with a large tip gap. As the vortex travels from the suction side to the pressure side of the blade, a large fluctuation of local pressure forces blade vibration. Nonsynchronous blade vibration occurs due to this vortex as the frequency of this vortex generation is not the same as the rotor. The present investigation confirms that this vortex is a part of separated tip clearance vortex, which is caused by the double-leakage tip clearance flow.

Structurally stable, thin silicon solar cells

NASA Technical Reports Server (NTRS)

Arndt, R. A.; Meulenberg, A.

1984-01-01

A fabrication process for structurally stable thin solar cell wafers that produce good power output after irradiation is described. The fabrication process is as follows. A 6 mil, circular wafer is oxidized on both sides. One side is then patterned with a rectangular array of holes in the oxide that are nominally 75 mils square and separated by 2 mil spacings. Wells are then etched into the silicon with KOH to a depth of 4 mils, leaving a 2 mil, unetched thickness. Two areas on the surface are left unetched to provide pads for bonding or testing. All oxide is then removed and the rest of the processing is normal; the unetched face is used as the illuminated face. When all other processing is complete, a 2 X 2 cm cell is sawed from the starting wafer leaving a border that is approximately 10 mils wide. The effective thickness, determined by weighing an unmetallized sample, of such a cell is about 2.4 mil.

Developing Barbed Microtip-Based Electrode Arrays for Biopotential Measurement

PubMed Central

Hsu, Li-Sheng; Tung, Shu-Wei; Kuo, Che-Hsi; Yang, Yao-Joe

2014-01-01

This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS) polymer, and a polyvinylchloride (PVC) film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG) and electrocardiography (ECG) recordings using these electrode prototypes were also demonstrated. PMID:25014098

3D mosquito screens to create window double screen traps for mosquito control.

PubMed

Khattab, Ayman; Jylhä, Kaisa; Hakala, Tomi; Aalto, Mikko; Malima, Robert; Kisinza, William; Honkala, Markku; Nousiainen, Pertti; Meri, Seppo

2017-08-29

Mosquitoes are vectors for many diseases such as malaria. Insecticide-treated bed nets and indoor residual spraying of insecticides are the principal malaria vector control tools used to prevent malaria in the tropics. Other interventions aim at reducing man-vector contact. For example, house screening provides additive or synergistic effects to other implemented measures. We used commercial screen materials made of polyester, polyethylene or polypropylene to design novel mosquito screens that provide remarkable additional benefits to those commonly used in house screening. The novel design is based on a double screen setup made of a screen with 3D geometric structures parallel to a commercial mosquito screen creating a trap between the two screens. Owing to the design of the 3D screen, mosquitoes can penetrate the 3D screen from one side but cannot return through the other side, making it a unidirectional mosquito screen. Therefore, the mosquitoes are trapped inside the double screen system. The permissiveness of both sides of the 3D screens for mosquitoes to pass through was tested in a wind tunnel using the insectary strain of Anopheles stephensi. Among twenty-five tested 3D screen designs, three designs from the cone, prism, or cylinder design groups were the most efficient in acting as unidirectional mosquito screens. The three cone-, prism-, and cylinder-based screens allowed, on average, 92, 75 and 64% of Anopheles stephensi mosquitoes released into the wind tunnel to penetrate the permissive side and 0, 0 and 6% of mosquitoes to escape through the non-permissive side, respectively. A cone-based 3D screen fulfilled the study objective. It allowed capturing 92% of mosquitoes within the double screen setup inside the wind tunnel and blocked 100% from escaping. Thus, the cone-based screen effectively acted as a unidirectional mosquito screen. This 3D screen-based trap design could therefore be used in house screening as a means of avoiding infective bites and reducing mosquito population size.

Millimeter-Wave Wireless Power Transfer Technology for Space Applications

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Manohara, Harish; Mojarradi, Mohammad M.; Vo, Tuan A.; Mojarradi, Hadi; Bae, Sam Y.; Marzwell, Neville

2008-01-01

In this paper we present a new compact, scalable, and low cost technology for efficient receiving of power using RF waves at 94 GHz. This technology employs a highly innovative array of slot antennas that is integrated on substrate composed of gold (Au), silicon (Si), and silicon dioxide (SiO2) layers. The length of the slots and spacing between them are optimized for a highly efficient beam through a 3-D electromagnetic simulation process. Antenna simulation results shows a good beam profile with very low side lobe levels and better than 93% antenna efficiency.