Transport anomalies of high-mobility Q-valley electrons in few-layer WS2 and MoS2

NASA Astrophysics Data System (ADS)

Wang, Ning

Atomically thin transition metal dichalcogenides (TMDCs) have opened new avenues for exploring physical property anomalies due to their large band gaps, strong spin-orbit couplings, and rich valley degrees of freedom. Although novel optical phenomena such as valley selective circular dichroism, opto-valley Hall effect, and valley Zeeman effect have been extensively studied in TMDCs, investigation of quantum transport properties has encountered a number of obstacles primarily due to the low carrier mobility and strong impurity scattering. Recently, we successfully fabricated ultrahigh-mobility few-layer TMDC field-effect transistors based on the boron nitride encapsulation method and observed a number of interesting transport properties, such as even-odd layer-dependent magnetotransport of Q-valley electrons in WS2 and MoS2 and unconventional quantum Hall transport of Γ-valley hole carriers in WSe2. In few-layer samples of these TMDCs, the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q-valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q-valleys to be spin-valley coupled. In this talk, I'll demonstrate the prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices. In addition, we observe a series of quantum Hall states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field in p-type few-layer TMDCs, indicating a large Zeeman energy associated with the carriers in the valence band at the Γ-valley. Financial supports from the Research Grants Council of Hong Kong (Project Nos. 16302215, HKU9/CRF/13G, 604112 and N-HKUST613/12) are hereby acknowledged.

Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

NASA Astrophysics Data System (ADS)

Kou, Liangzhi; Fu, Huixia; Ma, Yandong; Yan, Binghai; Liao, Ting; Du, Aijun; Chen, Changfeng

2018-02-01

We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). We showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by C H2OH , which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

Superconducting quantum spin-Hall systems with giant orbital g-factors

NASA Astrophysics Data System (ADS)

Hankiewicz, Ewelina; Reinthaler, Rolf; Tkachov, Grigory

Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. Here, we describe a novel superconducting quantum spin-Hall effect (quantum spin Hall system in the proximity to the s-wave superconductor and in the orbital in-plane magnetic field), which is protected against elastic backscattering by combined time-reversal and particle-hole symmetry. This effect is characterized by spin-polarized edge states, which can be manipulated in weak magnetic fields due to a giant effective orbital g-factor, allowing the generation of spin currents. The phenomenon provides a novel solution to the outstanding challenge of detecting the spin-polarization of the edge states. Here we propose the detection of the edge polarization in the three-terminal junction using unusual transport properties of superconducting quantum Hall-effect: a non-monotonic excess current and a zero-bias conductance splitting. We thank for the financial support the German Science Foundation (DFG), Grants No HA 5893/4-1 within SPP 1666, HA5893/5-2 within FOR1162 and TK60/1-1 (G.T.), as well the ENB graduate school ``Topological insulators''.

Numerical Study of Quantum Hall Bilayers at Total Filling νT=1 : A New Phase at Intermediate Layer Distances

NASA Astrophysics Data System (ADS)

Zhu, Zheng; Fu, Liang; Sheng, D. N.

2017-10-01

We study the phase diagram of quantum Hall bilayer systems with total filing νT=1 /2 +1 /2 of the lowest Landau level as a function of layer distances d . Based on numerical exact diagonalization calculations, we obtain three distinct phases, including an exciton superfluid phase with spontaneous interlayer coherence at small d , a composite Fermi liquid at large d , and an intermediate phase for 1.1

Prediction of a Large-Gap and Switchable Kane-Mele Quantum Spin Hall Insulator

NASA Astrophysics Data System (ADS)

Marrazzo, Antimo; Gibertini, Marco; Campi, Davide; Mounet, Nicolas; Marzari, Nicola

2018-03-01

Fundamental research and technological applications of topological insulators are hindered by the rarity of materials exhibiting a robust topologically nontrivial phase, especially in two dimensions. Here, by means of extensive first-principles calculations, we propose a novel quantum spin Hall insulator with a sizable band gap of ˜0.5 eV that is a monolayer of jacutingaite, a naturally occurring layered mineral first discovered in 2008 in Brazil and recently synthesized. This system realizes the paradigmatic Kane-Mele model for quantum spin Hall insulators in a potentially exfoliable two-dimensional monolayer, with helical edge states that are robust and that can be manipulated exploiting a unique strong interplay between spin-orbit coupling, crystal-symmetry breaking, and dielectric response.

Universality of modular symmetries in two-dimensional magnetotransport

NASA Astrophysics Data System (ADS)

Olsen, K. S.; Limseth, H. S.; Lütken, C. A.

2018-01-01

We analyze experimental quantum Hall data from a wide range of different materials, including semiconducting heterojunctions, thin films, surface layers, graphene, mercury telluride, bismuth antimonide, and black phosphorus. The fact that these materials have little in common, except that charge transport is effectively two-dimensional, shows how robust and universal the quantum Hall phenomenon is. The scaling and fixed point data we analyzed appear to show that magnetotransport in two dimensions is governed by a small number of universality classes that are classified by modular symmetries, which are infinite discrete symmetries not previously seen in nature. The Hall plateaux are (infrared) stable fixed points of the scaling-flow, and quantum critical points (where the wave function is delocalized) are unstable fixed points of scaling. Modular symmetries are so rigid that they in some cases fix the global geometry of the scaling flow, and therefore predict the exact location of quantum critical points, as well as the shape of flow lines anywhere in the phase diagram. We show that most available experimental quantum Hall scaling data are in good agreement with these predictions.

Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.

PubMed

Danilov, Yuri A; Vikhrova, Olga V; Kudrin, Alexey V; Zvonkov, Boris N

2012-06-01

The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.

Exciton Transport and Perfect Coulomb Drag

NASA Astrophysics Data System (ADS)

Nandi, Debaleena

2013-03-01

Exciton condensation is realized in closely-spaced bilayer quantum Hall systems at νT = 1 when the total density in the two 2D electron layers matches the Landau level degeneracy. In this state, electrons in one layer become tightly bound to holes in the other layer, forming a condensate similar to the Cooper pairs in a superconductor. Being charge neutral, these excitons ought to be free to move throughout the bulk of the quantum Hall fluid. One therefore expects that electron current driven in one layer would spontaneously generate a ``hole'' current in the other layer, even in the otherwise insulating bulk of the 2D system. We demonstrate precisely this effect, using a Corbino geometry to defeat edge state transport. Our sample contains two essentially identical two-dimensional electron systems (2DES) in GaAs quantum wells separated by a thin AlGaAs barrier. It is patterned into an annulus with arms protruding from each rim that provide contact to each 2DES separately. A current drag geometry is realized by applying a drive voltage between the outer and inner rim on one 2DES layer while the two rims on the opposite layer are connected together in a closed loop. There is no direct electrical connection between the two layers. At νT = 1 the bulk of the Corbino annulus becomes insulating owing to the quantum Hall gap and net charge transport across the bulk is suppressed. Nevertheless, we find that in the drag geometry appreciable currents do flow in each layer. These currents are almost exactly equal magnitude but, crucially, flow in opposite directions. This phenomenon reflects exciton transport within the νT = 1 condensate, rather than its quasiparticle excitations. We find that quasiparticle transport competes with exciton transport at elevated temperatures, drive levels, and layer separations. This work represents a collaboration with A.D.K. Finck, J.P. Eisenstein, L.N. Pfeiffer and K.W. West. This work is supported by the NSF under grant DMR-1003080.

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Joishi, Chandan; Xia, Zhanbo; Brenner, Mark; Lodha, Saurabh; Rajan, Siddharth

2018-06-01

In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and parasitic channel formation in the barrier layer. We demonstrate a double heterostructure to realize a β-(AlxGa1-x)2O3/Ga2O3/(AlxGa1-x)2O3 quantum well, where electrons can be transferred from below and above the β-Ga2O3 quantum well. The confined 2DEG charge density of 3.85 × 1012 cm-2 was estimated from the low-temperature Hall measurement, which is higher than that achievable in a single heterostructure. Hall mobilities of 1775 cm2/V.s at 40 K and 123 cm2/V.s at room temperature were measured. Modulation-doped double heterostructure field effect transistors showed a maximum drain current of IDS = 257 mA/mm, a peak transconductance (gm) of 39 mS/mm, and a pinch-off voltage of -7.0 V at room temperature. The three-terminal off-state breakdown measurement on the device with a gate-drain spacing (LGD) of 1.55 μm showed a breakdown voltage of 428 V, corresponding to an average breakdown field of 2.8 MV/cm. The breakdown measurement on the device with a scaled gate-drain spacing of 196 nm indicated an average breakdown field of 3.2 MV/cm. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistor could act as a promising candidate for high power and high frequency device applications.

Optimization of edge state velocity in the integer quantum Hall regime

NASA Astrophysics Data System (ADS)

Sahasrabudhe, H.; Novakovic, B.; Nakamura, J.; Fallahi, S.; Povolotskyi, M.; Klimeck, G.; Rahman, R.; Manfra, M. J.

2018-02-01

Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point contact (QPCs) interferometers having a high edge state velocity is desirable. Here we present a new simulation method for designing heterostructures with high edge state velocity by realistically modeling edge states near QPCs in the integer quantum Hall effect (IQHE) regime. Using this simulation method, we also predict the filling factor at the center of QPCs and their conductance at different gate voltages. The 3D Schrödinger equation is split into 1D and 2D parts. Quasi-1D Schrödinger and Poisson equations are solved self-consistently in the IQHE regime to obtain the potential profile, and quantum transport is used to solve for the edge state wave functions. The velocity of edge states is found to be /B , where is the expectation value of the electric field for the edge state. Anisotropically etched trench gated heterostructures with double-sided delta doping have the highest edge state velocity among the structures considered.

Chirality-induced magnon transport in AA-stacked bilayer honeycomb chiral magnets.

PubMed

Owerre, S A

2016-11-30

In this Letter, we study the magnetic transport in AA-stacked bilayer honeycomb chiral magnets coupled either ferromagnetically or antiferromagnetically. For both couplings, we observe chirality-induced gaps, chiral protected edge states, magnon Hall and magnon spin Nernst effects of magnetic spin excitations. For ferromagnetically coupled layers, thermal Hall and spin Nernst conductivities do not change sign as function of magnetic field or temperature similar to single-layer honeycomb ferromagnetic insulator. In contrast, for antiferromagnetically coupled layers, we observe a sign change in the thermal Hall and spin Nernst conductivities as the magnetic field is reversed. We discuss possible experimental accessible honeycomb bilayer quantum materials in which these effects can be observed.

Effect of quantum tunneling on spin Hall magnetoresistance

NASA Astrophysics Data System (ADS)

Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

2017-02-01

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y3Fe5O12) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

Theory of activated transport in bilayer quantum Hall systems.

PubMed

Roostaei, B; Mullen, K J; Fertig, H A; Simon, S H

2008-07-25

We analyze the transport properties of bilayer quantum Hall systems at total filling factor nu=1 in drag geometries as a function of interlayer bias, in the limit where the disorder is sufficiently strong to unbind meron-antimeron pairs, the charged topological defects of the system. We compute the typical energy barrier for these objects to cross incompressible regions within the disordered system using a Hartree-Fock approach, and show how this leads to multiple activation energies when the system is biased. We then demonstrate using a bosonic Chern-Simons theory that in drag geometries current in a single layer directly leads to forces on only two of the four types of merons, inducing dissipation only in the drive layer. Dissipation in the drag layer results from interactions among the merons, resulting in very different temperature dependences for the drag and drive layers, in qualitative agreement with experiment.

Chemical potential and compressibility of quantum Hall bilayer excitons,.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skinner, Brian

2016-02-25

I consider a system of two parallel quantum Hall layers with total filling factor 0 or 1. When the distance between the layers is small enough, electrons and holes in opposite layers can form inter-layer excitons, which have a finite effective mass and interact via a dipole-dipole potential. I present results for the chemical potential u of the resulting bosonic system as a function of the exciton concentration n and the interlayer separation d. I show that both u and the interlayer capacitance have an unusual nonmonotonic dependence on d, owing to the interplay between an increasing dipole moment andmore » an increasing effective mass with increasing d. Finally, I discuss the transition between the superfluid and Wigner crystal phases, which is shown to occur at d x n-1/10. Results are derived first via simple intuitive arguments, and then verified with more careful analytic derivations and numeric calculations.« less

Interplay of Hofstadter and quantum Hall states in bilayer graphene

NASA Astrophysics Data System (ADS)

Spanton, Eric M.; Zibrov, Alexander A.; Zhou, Haoxin; Taniguchi, Takashi; Watanabe, Kenji; Young, Andrea

Electron interactions in ultraclean systems such as graphene lead to the fractional quantum Hall effect in an applied magnetic field. Long wavelength periodic potentials from a moiré pattern in aligned boron nitride-graphene heterostructures may compete with such interactions and favor spatially ordered states (e.g. Wigner crystals orcharge density waves). To investigate this competition, we studied the bulk phase diagram of asymmetrically moiré-coupled bilayer graphene via multi-terminal magnetocapacitance measurements at ultra-high magnetic fields. Two quantum numbers characterize energy gaps in this regime: t, which indexes the Bloch bands, and s, which indexes the Landau level. Similar to past experiments, we observe the conventional integer and fractional quantum Hall gaps (t = 0), integer Hofstadter gaps (integer s and integer t ≠ 0), and fractional Bloch states associated with an expanded superlattice unit cell (fractional s and integer t). Additionally, we find states with fractional values for both s and t. Measurement of the capacitance matrix shows that these states occur on the layer exposed to the strong periodic potential. We discuss the results in terms of possible fractional quantum hall states unique to periodically modulated systems.

Intrinsic quantum anomalous Hall effect in the kagome lattice Cs 2LiMn 3F 12

DOE PAGES

Xu, Gang; Lian, Biao; Zhang, Shou -Cheng

2015-10-27

In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several well-separated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs 2Mn 3F 12 kagome lattice and on the (001) surface of a Cs 2LiMn 3F 12 single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Furthermore, a simplified tight binding modelmore » based on the in-plane ddσ antibonding states is constructed to understand the topological band structures of the system.« less

Theory of Multifarious Quantum Phases and Large Anomalous Hall Effect in Pyrochlore Iridate Thin Films

PubMed Central

Hwang, Kyusung; Kim, Yong Baek

2016-01-01

We theoretically investigate emergent quantum phases in the thin film geometries of the pyrochore iridates, where a number of exotic quantum ground states are proposed to occur in bulk materials as a result of the interplay between electron correlation and strong spin-orbit coupling. The fate of these bulk phases as well as novel quantum states that may arise only in the thin film platforms, are studied via a theoretical model that allows layer-dependent magnetic structures. It is found that the magnetic order develop in inhomogeneous fashions in the thin film geometries. This leads to a variety of magnetic metal phases with modulated magnetic ordering patterns across different layers. Both the bulk and boundary electronic states in these phases conspire to promote unusual electronic properties. In particular, such phases are akin to the Weyl semimetal phase in the bulk system and they would exhibit an unusually large anomalous Hall effect. PMID:27418293

Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions.

PubMed

Masuda, Hidetoshi; Sakai, Hideaki; Tokunaga, Masashi; Yamasaki, Yuichi; Miyake, Atsushi; Shiogai, Junichi; Nakamura, Shintaro; Awaji, Satoshi; Tsukazaki, Atsushi; Nakao, Hironori; Murakami, Youichi; Arima, Taka-hisa; Tokura, Yoshinori; Ishiwata, Shintaro

2016-01-01

For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm(2)/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.

Robust integer and fractional helical modes in the quantum Hall effect

NASA Astrophysics Data System (ADS)

Ronen, Yuval; Cohen, Yonatan; Banitt, Daniel; Heiblum, Moty; Umansky, Vladimir

2018-04-01

Electronic systems harboring one-dimensional helical modes, where spin and momentum are locked, have lately become an important field of their own. When coupled to a conventional superconductor, such systems are expected to manifest topological superconductivity; a unique phase hosting exotic Majorana zero modes. Even more interesting are fractional helical modes, yet to be observed, which open the route for realizing generalized parafermions. Possessing non-Abelian exchange statistics, these quasiparticles may serve as building blocks in topological quantum computing. Here, we present a new approach to form protected one-dimensional helical edge modes in the quantum Hall regime. The novel platform is based on a carefully designed double-quantum-well structure in a GaAs-based system hosting two electronic sub-bands; each tuned to the quantum Hall effect regime. By electrostatic gating of different areas of the structure, counter-propagating integer, as well as fractional, edge modes with opposite spins are formed. We demonstrate that, due to spin protection, these helical modes remain ballistic over large distances. In addition to the formation of helical modes, this platform can serve as a rich playground for artificial induction of compounded fractional edge modes, and for construction of edge-mode-based interferometers.

Cyclotron resonance of interacting quantum Hall droplets

NASA Astrophysics Data System (ADS)

Widmann, M.; Merkt, U.; Cortés, M.; Häusler, W.; Eberl, K.

1998-06-01

The line shape and position of cyclotron resonance in gated GaAs/GaAlAs heterojunctions with δ-doped layers of negatively charged beryllium acceptors, that provide strong potential fluctuations in the channels of the quasi-two-dimensional electron systems, are examined. Specifically, the magnetic quantum limit is considered when the electrons are localized in separate quantum Hall droplets in the valleys of the disorder potential. A model treating disorder and electron-electron interaction on an equal footing accounts for all of the principal experimental findings: blue shifts from the unperturbed cyclotron frequency that decrease when the electron density is reduced, surprisingly narrow lines in the magnetic quantum limit, and asymmetric lines due to additional oscillator strength on their high-frequency sides.

Fractional Quantum Hall Effect in Infinite-Layer Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naud, J. D.; Pryadko, Leonid P.; Sondhi, S. L.

2000-12-18

Stacked two dimensional electron systems in transverse magnetic fields exhibit three dimensional fractional quantum Hall phases. We analyze the simplest such phases and find novel bulk properties, e.g., irrational braiding. These phases host ''one and a half'' dimensional surface phases in which motion in one direction is chiral. We offer a general analysis of conduction in the latter by combining sum rule and renormalization group arguments, and find that when interlayer tunneling is marginal or irrelevant they are chiral semimetals that conduct only at T>0 or with disorder.

SO(8) fermion dynamical symmetry and strongly correlated quantum Hall states in monolayer graphene

NASA Astrophysics Data System (ADS)

Wu, Lian-Ao; Murphy, Matthew; Guidry, Mike

2017-03-01

A formalism is presented for treating strongly correlated graphene quantum Hall states in terms of an SO(8) fermion dynamical symmetry that includes pairing as well as particle-hole generators. The graphene SO(8) algebra is isomorphic to an SO(8) algebra that has found broad application in nuclear physics, albeit with physically very different generators, and exhibits a strong formal similarity to SU(4) symmetries that have been proposed to describe high-temperature superconductors. The well-known SU(4) symmetry of quantum Hall ferromagnetism for single-layer graphene is recovered as one subgroup of SO(8), but the dynamical symmetry structure associated with the full set of SO(8) subgroup chains extends quantum Hall ferromagnetism and allows analytical many-body solutions for a rich set of collective states exhibiting spontaneously broken symmetry that may be important for the low-energy physics of graphene in strong magnetic fields. The SO(8) symmetry permits a natural definition of generalized coherent states that correspond to symmetry-constrained Hartree-Fock-Bogoliubov solutions, or equivalently a microscopically derived Ginzburg-Landau formalism, exhibiting the interplay between competing spontaneously broken symmetries in determining the ground state.

Interface and phase transition between Moore-Read and Halperin 331 fractional quantum Hall states: Realization of chiral Majorana fermion

NASA Astrophysics Data System (ADS)

Yang, Kun

2017-12-01

We consider an interface separating the Moore-Read state and Halperin 331 state in a half-filled Landau level, which can be realized in a double quantum well system with varying interwell tunneling and/or interaction strengths. In the presence of electron tunneling and strong Coulomb interactions across the interface, we find that all charge modes localize and the only propagating mode left is a chiral Majorana fermion mode. Methods to probe this neutral mode are proposed. A quantum phase transition between the Moore-Read and Halperin 331 states is described by a network of such Majorana fermion modes. In addition to a direct transition, they may also be separated by a phase in which the Majorana fermions are delocalized, realizing an incompressible state which exhibits quantum Hall charge transport and bulk heat conduction.

Electronic Phenomena in Two-Dimensional Topological Insulators

NASA Astrophysics Data System (ADS)

Hart, Sean

In recent years, two-dimensional electron systems have played an integral role at the forefront of discoveries in condensed matter physics. These include the integer and fractional quantum Hall effects, massless electron physics in graphene, the quantum spin and quantum anomalous Hall effects, and many more. Investigation of these fascinating states of matter brings with it surprising new results, challenges us to understand new physical phenomena, and pushes us toward new technological capabilities. In this thesis, we describe a set of experiments aimed at elucidating the behavior of two such two-dimensional systems: the quantum Hall effect, and the quantum spin Hall effect. The first experiment examines electronic behavior at the edge of a two-dimensional electron system formed in a GaAs/AlGaAs heterostructure, under the application of a strong perpendicular magnetic field. When the ratio between the number of electrons and flux quanta in the system is tuned near certain integer or fractional values, the electrons in the system can form states which are respectively known as the integer and fractional quantum Hall effects. These states are insulators in the bulk, but carry gapless excitations at the edge. Remarkably, in certain fractional quantum Hall states, it was predicted that even as charge is carried downstream along an edge, heat can be carried upstream in a neutral edge channel. By placing quantum dots along a quantum Hall edge, we are able to locally monitor the edge temperature. Using a quantum point contact, we can locally heat the edge and use the quantum dot thermometers to detect heat carried both downstream and upstream. We find that heat can be carried upstream when the edge contains structure related to the nu = 2/3 fractional quantum Hall state. We further find that this fractional edge physics can even be present when the bulk is tuned to the nu = 1integer quantum Hall state. Our experiments also demonstrate that the nature of this fractional reconstruction can be tuned by modifying the sharpness of the confining potential at the edge. In the second set of experiments, we focus on an exciting new two-dimensional system known as a quantum spin Hall insulator. Realized in quantum well heterostructures formed by layers of HgTe and HgCdTe, this material belongs to a set of recently discovered topological insulators. Like the quantum Hall effect, the quantum spin Hall effect is characterized by an insulating bulk and conducting edge states. However, the quantum spin Hall effect occurs in the absence of an external magnetic field, and contains a pair of counter propagating edge states which are the time-reversed partners of one another. It was recently predicted that a Josephson junction based around one of these edge states could host a new variety of excitation called a Majorana fermion. Majorana fermions are predicted to have non-Abelian braiding statistics, a property which holds promise as a robust basis for quantum information processing. In our experiments, we place a section of quantum spin Hall insulator between two superconducting leads, to form a Josephson junction. By measuring Fraunhofer interference, we are able to study the spatial distribution of supercurrent in the junction. In the quantum spin Hall regime, this supercurrent becomes confined to the topological edge states. In addition to providing a microscopic picture of these states, our measurement scheme generally provides a way to investigate the edge structure of any topological insulator. In further experiments, we tune the chemical potential into the conduction band of the HgTe system, and investigate the behavior of Fraunhofer interference as a magnetic field is applied parallel to the plane of the quantum well. By theoretically analyzing the interference in a parallel field, we find that Cooper pairs in the material acquire a tunable momentum that grows with the magnetic field strength. This finite pairing momentum leads to the appearance of triplet pair correlations at certain locations within the junction, which we are able to control with the external magnetic field. Our measurements and analysis also provide a method to obtain information about the Fermi surface properties and spin-orbit coupling in two-dimensional materials.

Room temperature quantum spin Hall insulators with a buckled square lattice.

PubMed

Luo, Wei; Xiang, Hongjun

2015-05-13

Two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, are excellent candidates for coherent spin transport related applications because the edge states of 2D TIs are robust against nonmagnetic impurities since the only available backscattering channel is forbidden. Currently, most known 2D TIs are based on a hexagonal (specifically, honeycomb) lattice. Here, we propose that there exists the quantum spin Hall effect (QSHE) in a buckled square lattice. Through performing global structure optimization, we predict a new three-layer quasi-2D (Q2D) structure, which has the lowest energy among all structures with the thickness less than 6.0 Å for the BiF system. It is identified to be a Q2D TI with a large band gap (0.69 eV). The electronic states of the Q2D BiF system near the Fermi level are mainly contributed by the middle Bi square lattice, which are sandwiched by two inert BiF2 layers. This is beneficial since the interaction between a substrate and the Q2D material may not change the topological properties of the system, as we demonstrate in the case of the NaF substrate. Finally, we come up with a new tight-binding model for a two-orbital system with the buckled square lattice to explain the low-energy physics of the Q2D BiF material. Our study not only predicts a QSH insulator for realistic room temperature applications but also provides a new lattice system for engineering topological states such as quantum anomalous Hall effect.

Gapless Andreev bound states in the quantum spin Hall insulator HgTe.

PubMed

Bocquillon, Erwann; Deacon, Russell S; Wiedenmann, Jonas; Leubner, Philipp; Klapwijk, Teunis M; Brüne, Christoph; Ishibashi, Koji; Buhmann, Hartmut; Molenkamp, Laurens W

2017-02-01

In recent years, Majorana physics has attracted considerable attention because of exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to engineer the interplay between superconductivity and electronic properties in a topological insulator, but experimental work remains scarce and ambiguous. Here, we report experimental evidence for topological superconductivity induced in a HgTe quantum well, a 2D topological insulator that exhibits the quantum spin Hall (QSH) effect. The a.c. Josephson effect demonstrates that the supercurrent has a 4π periodicity in the superconducting phase difference, as indicated by a doubling of the voltage step for multiple Shapiro steps. In addition, this response like that of a superconducting quantum interference device to a perpendicular magnetic field shows that the 4π-periodic supercurrent originates from states located on the edges of the junction. Both features appear strongest towards the QSH regime, and thus provide evidence for induced topological superconductivity in the QSH edge states.

Persistent Hall voltages across thin planar charged quantum rings on the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Durganandini, P.

2015-03-01

We consider thin planar charged quantum rings on the surface of a three dimensional topological insulator coated with a thin ferromagnetic layer. We show theoretically, that when the ring is threaded by a magnetic field, then, due to the Aharanov-Bohm effect, there are not only the well known circulating persistent currents in the ring but also oscillating persistent Hall voltages across the thin ring. Such oscillating persistent Hall voltages arise due to the topological magneto-electric effect associated with the axion electrodynamics exhibited by the surface electronic states of the three dimensional topological insulator when time reversal symmetry is broken. We further generalize to the case of dipole currents and show that analogous Hall dipole voltages arise. We also discuss the robustness of the effect and suggest possible experimental realizations in quantum rings made of semiconductor heterostructures. Such experiments could also provide new ways of observing the predicted topological magneto-electric effect in three dimensional topological insulators with time reversal symmetry breaking. I thank BCUD, Pune University, Pune for financial support through research grant.

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Binh-Minh, E-mail: mbnguyen@hrl.com, E-mail: MSokolich@hrl.com; Yi, Wei; Noah, Ramsey

2015-01-19

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm{sup 2}/Vs at sheet charge density of 8 × 10{sup 11} cm{sup −2} and approaching 100 000 cm{sup 2}/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridizationmore » gap.« less

Experiments on Quantum Hall Topological Phases in Ultra Low Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Rui-Rui

2015-02-14

This project is to cool electrons in semiconductors to extremely low temperatures and to study new states of matter formed by low-dimensional electrons (or holes). At such low temperatures (and with an intense magnetic field), electronic behavior differs completely from ordinary ones observed at room temperatures or regular low temperature. Studies of electrons at such low temperatures would open the door for fundamental discoveries in condensed matter physics. Present studies have been focused on topological phases in the fractional quantum Hall effect in GaAs/AlGaAs semiconductor heterostructures, and the newly discovered (by this group) quantum spin Hall effect in InAs/GaSb materials.more » This project consists of the following components: 1) Development of efficient sample cooling techniques and electron thermometry: Our goal is to reach 1 mK electron temperature and reasonable determination of electron temperature; 2) Experiments at ultra-low temperatures: Our goal is to understand the energy scale of competing quantum phases, by measuring the temperature-dependence of transport features. Focus will be placed on such issues as the energy gap of the 5/2 state, and those of 12/5 (and possible 13/5); resistive signature of instability near 1/2 at ultra-low temperatures; 3) Measurement of the 5/2 gaps in the limit of small or large Zeeman energies: Our goal is to gain physics insight of 5/2 state at limiting experimental parameters, especially those properties concerning the spin polarization; 4) Experiments on tuning the electron-electron interaction in a screened quantum Hall system: Our goal is to gain understanding of the formation of paired fractional quantum Hall state as the interaction pseudo-potential is being modified by a nearby screening electron layer; 5) Experiments on the quantized helical edge states under a strong magnetic field and ultralow temperatures: our goal is to investigate both the bulk and edge states in a quantum spin Hall insulator under time-reversal symmetry-broken conditions.« less

Surface Acoustic Wave Study of Exciton Condensation in Bilayer Quantum Hall Systems

NASA Astrophysics Data System (ADS)

Pollanen, J.; Eisenstein, J. P.; Pfeiffer, L. N.; West, K. W.

In bilayer two-dimensional electron systems (2DES) in GaAs a strongly correlated many-electron state forms at low temperature and high magnetic field when the total electron density nT becomes equal to the degeneracy of a single spin split Landau level. This state corresponds to a total filling factor νT = 1 and can be described in terms of pseudospin ferromagnetism, or equivalently, Bose condensation of bilayer excitons. We have simultaneously measured magneto-transport and the propagation of pulsed surface acoustic waves (SAWs) at a frequency of 747 MHz to explore the phase transition between two independent layers at νT = 1 / 2 + 1 / 2 and the correlated state at νT = 1 in a high quality double quantum well device. We tune through this transition by varying the total electron density in our device with front and backside electrostatic gates. We acknowledge funding provided by the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center (NFS Grant PHY-1125565) with support of the Gordon and Betty Moore Foundation (GBMF-12500028).

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Yang; Feng, Xiao; Ou, Yunbo

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to amore » quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.« less

Enhanced thermopower in ZnO two-dimensional electron gas

PubMed Central

Shimizu, Sunao; Bahramy, Mohammad Saeed; Iizuka, Takahiko; Ono, Shimpei; Miwa, Kazumoto; Tokura, Yoshinori; Iwasa, Yoshihiro

2016-01-01

Control of dimensionality has proven to be an effective way to manipulate the electronic properties of materials, thereby enabling exotic quantum phenomena, such as superconductivity, quantum Hall effects, and valleytronic effects. Another example is thermoelectricity, which has been theoretically proposed to be favorably controllable by reducing the dimensionality. Here, we verify this proposal by performing a systematic study on a gate-tuned 2D electron gas (2DEG) system formed at the surface of ZnO. Combining state-of-the-art electric-double-layer transistor experiments and realistic tight-binding calculations, we show that, for a wide range of carrier densities, the 2DEG channel comprises a single subband, and its effective thickness can be reduced to ∼ 1 nm at sufficiently high gate biases. We also demonstrate that the thermoelectric performance of the 2DEG region is significantly higher than that of bulk ZnO. Our approach opens up a route to exploit the peculiar behavior of 2DEG electronic states and realize thermoelectric devices with advanced functionalities. PMID:27222585

Contactless measurement of alternating current conductance in quantum Hall structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drichko, I. L.; Diakonov, A. M.; Malysh, V. A.

2014-10-21

We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods—acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use themore » fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized p-SiGe/Ge/SiGe heterostructure.« less

Undoped Si/SiGe Depletion-Mode Few-Electron Double Quantum Dots

NASA Astrophysics Data System (ADS)

Borselli, Matthew; Huang, Biqin; Ross, Richard; Croke, Edward; Holabird, Kevin; Hazard, Thomas; Watson, Christopher; Kiselev, Andrey; Deelman, Peter; Alvarado-Rodriguez, Ivan; Schmitz, Adele; Sokolich, Marko; Gyure, Mark; Hunter, Andrew

2011-03-01

We have successfully formed a double quantum dot in the sSi/SiGe material system without need for intentional dopants. In our design, a two-dimensional electron gas is formed in a strained silicon well by forward biasing a global gate. Lateral definition of quantum dots is established with reverse-biased gates with ~ 40 nm critical dimensions. Low-temperature capacitance and Hall measurements confirm electrons are confined in the Si-well with mobilities > 10 4 cm 2 / V - s . Further characterization identifies practical gate bias limits for this design and will be compared to simulation. Several double dot devices have been brought into the few-electron Coulomb blockade regime as measured by through-dot transport. Honeycomb diagrams and nonlinear through-dot transport measurements are used to quantify dot capacitances and addition energies of several meV. Sponsored by United States Department of Defense. Approved for Public Release, Distribution Unlimited.

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

NASA Astrophysics Data System (ADS)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

High resolution study of magnetic ordering at absolute zero.

PubMed

Lee, M; Husmann, A; Rosenbaum, T F; Aeppli, G

2004-05-07

High resolution pressure measurements in the zero-temperature limit provide a unique opportunity to study the behavior of strongly interacting, itinerant electrons with coupled spin and charge degrees of freedom. Approaching the precision that has become the hallmark of experiments on classical critical phenomena, we characterize the quantum critical behavior of the model, elemental antiferromagnet chromium, lightly doped with vanadium. We resolve the sharp doubling of the Hall coefficient at the quantum critical point and trace the dominating effects of quantum fluctuations up to surprisingly high temperatures.

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

NASA Astrophysics Data System (ADS)

Lund, Cory; Catalano, Massimo; Wang, Luhua; Wurm, Christian; Mates, Thomas; Kim, Moon; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2018-02-01

N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and GaN layers. As the thickness was increased, the dots elongated along the step direction before growing outward perpendicular to the step direction and coalescing to form a complete InN layer. XRD reciprocal space maps indicated that the InN films relaxed upon quantum dot formation after nominally 1 nm thick growth, resulting in 5-7 nm tall dots with diameters around 20-50 nm. For thicker layers above 10 nm, high electron mobilities of up to 706 cm2/V s were measured using Hall effect measurements indicating high quality layers.

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

DOE PAGES

Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

2016-05-04

Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at themore » double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

Algebra of Majorana doubling.

PubMed

Lee, Jaehoon; Wilczek, Frank

2013-11-27

Motivated by the problem of identifying Majorana mode operators at junctions, we analyze a basic algebraic structure leading to a doubled spectrum. For general (nonlinear) interactions the emergent mode creation operator is highly nonlinear in the original effective mode operators, and therefore also in the underlying electron creation and destruction operators. This phenomenon could open up new possibilities for controlled dynamical manipulation of the modes. We briefly compare and contrast related issues in the Pfaffian quantum Hall state.

Growth and characterization of (110) InAs quantum well metamorphic heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podpirka, Adrian A., E-mail: adrian.podpirka.ctr@nrl.navy.mil; Katz, Michael B.; Twigg, Mark E.

An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm{sup 2}/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in themore » quantum Hall regime.« less

Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

NASA Astrophysics Data System (ADS)

Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Borah, Abhinandan; Agarwal, Hitesh; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar

There is an increasing interest in the electronic properties of few layer graphene as it offers a platform to study electronic interactions because the dispersion of bands can be tuned with number and stacking of layers in combination with electric field. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism (QHF) seen in a dual gated ABA trilayer graphene sample. Due to high mobility (500,000 cm2V-1s-1) in our device compared to previous studies, we find all symmetry broken states including ν = 0 filling factor at relatively low magnetic field (6T). Activation measurements show that Landau Level (LL) gaps are enhanced by interactions. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of QHF states at low magnetic field.

Wave Function and Emergent SU(2) Symmetry in the νT=1 Quantum Hall Bilayer

NASA Astrophysics Data System (ADS)

Lian, Biao; Zhang, Shou-Cheng

2018-02-01

We propose a trial wave function for the quantum Hall bilayer system of total filling factor νT=1 at a layer distance d to magnetic length ℓ ratio d /ℓ=κc 1≈1.1 , where the lowest charged excitation is known to have a level crossing. The wave function has two-particle correlations, which fit well with those in previous numerical studies, and can be viewed as a Bose-Einstein condensate of free excitons formed by composite bosons and anticomposite bosons in different layers. We show the free nature of these excitons indicating an emergent SU(2) symmetry for the composite bosons at d /ℓ=κc 1, which leads to the level crossing in low-lying charged excitations. We further show the overlap between the trial wave function, and the ground state of a small size exact diagonalization is peaked near d /ℓ=κc 1, which supports our theory.

Quantum Anomalous Hall Effect in Low-buckled Honeycomb Lattice with In-plane Magnetization

NASA Astrophysics Data System (ADS)

Ren, Yafei; Pan, Hui; Yang, Fei; Li, Xin; Qiao, Zhenhua; Zhenhua Qiao's Group Team; Hui Pan's Group Team

With out-of-plane magnetization, the quantum anomalous Hall effect has been extensively studied in quantum wells and two-dimensional atomic crystal layers. Here, we investigate the possibility of realizing quantum anomalous Hall effect (QAHE) in honeycomb lattices with in-plane magnetization. We show that the QAHE can only occur in low-buckled honeycomb lattice where both intrinsic and intrinsic Rashba spin-orbit coupling appear spontaneously. The extrinsic Rashba spin-orbit coupling is detrimental to this phase. In contrast to the out-of-plane magnetization induced QAHE, the QAHE from in-plane magnetization is achieved in the vicinity of the time reversal symmetric momenta at M points rather than Dirac points. In monolayer case, the QAHE can be characterized by Chern number  = +/- 1 whereas additional phases with Chern number  = +/- 2 appear in chiral stacked bilayer system. The Chern number strongly depends on the orientation of the magnetization. The bilayer system also provides additional tunability via out-of-plane electric field, which can reduce the critical magnetization strength required to induce QAHE. It can also lead to topological phase transitions from  = +/- 2 to +/- 1 and finally to 0 Equal contribution from Yafei Ren and Hui Pan.

Negative quantum capacitance induced by midgap states in single-layer graphene.

PubMed

Wang, Lin; Wang, Yang; Chen, Xiaolong; Zhu, Wei; Zhu, Chao; Wu, Zefei; Han, Yu; Zhang, Mingwei; Li, Wei; He, Yuheng; Xiong, Wei; Law, Kam Tuen; Su, Dangsheng; Wang, Ning

2013-01-01

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.

Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene

PubMed Central

Wang, Lin; Wang, Yang; Chen, Xiaolong; Zhu, Wei; Zhu, Chao; Wu, Zefei; Han, Yu; Zhang, Mingwei; Li, Wei; He, Yuheng; Xiong, Wei; Law, Kam Tuen; Su, Dangsheng; Wang, Ning

2013-01-01

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions. PMID:23784258

Characteristics of a-IGZO/ITO hybrid layer deposited by magnetron sputtering.

PubMed

Bang, Joon-Ho; Park, Hee-Woo; Cho, Sang-Hyun; Song, Pung-Keun

2012-04-01

Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.

Electrostatically defined isolated domain wall in integer quantum Hall regime as precursor for reconfigurable Majorana network

NASA Astrophysics Data System (ADS)

Kazakov, Alexander; Simion, George; Kolkovsky, Valery; Adamus, Zbigniew; Karczewski, Grzegorz; Wojtowicz, Tomasz; Lyanda-Geller, Yuli; Rokhinson, Leonid

Development of a two-dimensional systems with reconfigurable one-dimensional topological superconductor channels became primary direction in experimental branch of Majorana physics. Such system would allow to probe non-Abelian properties of Majorana quasiparticles and realize the ultimate goal of Majorana research - topological qubit for topologically protected quantum computations. In order to create and exchange Majorana quasiparticles desired system may be spin-full, but fermion doubling should be lifted. These requirements may be fulfilled in domain walls (DW) which are formed during quantum Hall ferromagnet (QHF) transition when two Landau levels with opposite spin polarization become degenerate. We developed a system based on CdMnTe quantum well with engineered placement of Mn ions where exchange interaction and, consequently, QHF transition can be controlled by electrostatic gating. Using electrostatic control of exchange we create conductive channels of DWs which, unlike conventional edge channels, are not chiral and should contain both spin polarizations. We will present results on the formation of isolated DWs of various widths and discuss their transport properties. Department of Defence Office of Naval research Award N000141410339.

Hydrodynamic flows of non-Fermi liquids: Magnetotransport and bilayer drag

NASA Astrophysics Data System (ADS)

Patel, Aavishkar A.; Davison, Richard A.; Levchenko, Alex

2017-11-01

We consider a hydrodynamic description of transport for generic two-dimensional electron systems that lack Galilean invariance and do not fall into the category of Fermi liquids. We study magnetoresistance and show that it is governed only by the electronic viscosity provided that the wavelength of the underlying disorder potential is large compared to the microscopic equilibration length. We also derive the Coulomb drag transresistance for double-layer non-Fermi-liquid systems in the hydrodynamic regime. As an example, we consider frictional drag between two quantum Hall states with half-filled lowest Landau levels, each described by a Fermi surface of composite fermions coupled to a U (1 ) gauge field. We contrast our results to prior calculations of drag of Chern-Simons composite particles and place our findings in the context of available experimental data.

Magnetically Defined Qubits on 3D Topological Insulators

NASA Astrophysics Data System (ADS)

Ferreira, Gerson J.; Loss, Daniel

2014-03-01

We explore potentials that break time-reversal symmetry to confine the surface states of 3D topological insulators into quantum wires and quantum dots. A magnetic domain wall on a ferromagnet insulator cap layer provides interfacial states predicted to show the quantum anomalous Hall effect. Here, we show that confinement can also occur at magnetic domain heterostructures, with states extended in the inner domain, as well as interfacial QAHE states at the surrounding domain walls. The proposed geometry allows the isolation of the wire and dot from spurious circumventing surface states. For the quantum dots, we find that highly spin-polarized quantized QAHE states at the dot edge constitute a promising candidate for quantum computing qubits. See [Ferreira and Loss, Phys. Rev. Lett. 111, 106802 (2013)]. We explore potentials that break time-reversal symmetry to confine the surface states of 3D topological insulators into quantum wires and quantum dots. A magnetic domain wall on a ferromagnet insulator cap layer provides interfacial states predicted to show the quantum anomalous Hall effect. Here, we show that confinement can also occur at magnetic domain heterostructures, with states extended in the inner domain, as well as interfacial QAHE states at the surrounding domain walls. The proposed geometry allows the isolation of the wire and dot from spurious circumventing surface states. For the quantum dots, we find that highly spin-polarized quantized QAHE states at the dot edge constitute a promising candidate for quantum computing qubits. See [Ferreira and Loss, Phys. Rev. Lett. 111, 106802 (2013)]. We acknowledge support from the Swiss NSF, NCCR Nanoscience, NCCR QSIT, and the Brazillian Research Support Center Initiative (NAP Q-NANO) from Pró-Reitoria de Pesquisa (PRP/USP).

Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer

NASA Astrophysics Data System (ADS)

Sanchez-Yamagishi, Javier D.; Luo, Jason Y.; Young, Andrea F.; Hunt, Benjamin M.; Watanabe, Kenji; Taniguchi, Takashi; Ashoori, Raymond C.; Jarillo-Herrero, Pablo

2017-02-01

Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states, the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states. Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics.

Symmetry breaking in the zero-energy Landau level in bilayer graphene.

PubMed

Zhao, Y; Cadden-Zimansky, P; Jiang, Z; Kim, P

2010-02-12

The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high-field regime, the eightfold degeneracy in the zero-energy Landau level is completely lifted, exhibiting new quantum Hall states corresponding to filling factors nu=0, 1, 2, and 3. Measurements of the activation energy gaps for the nu=2 and 3 filling factors in tilted magnetic fields exhibit no appreciable dependence on the in-plane magnetic field, suggesting that these Landau level splittings are independent of spin. In addition, measurements taken at the nu=0 charge neutral point show that, similar to single layer graphene, the bilayer becomes insulating at high fields.

Quasi-one-dimensional quantum anomalous Hall systems as new platforms for scalable topological quantum computation

NASA Astrophysics Data System (ADS)

Chen, Chui-Zhen; Xie, Ying-Ming; Liu, Jie; Lee, Patrick A.; Law, K. T.

2018-03-01

Quantum anomalous Hall insulator/superconductor heterostructures emerged as a competitive platform to realize topological superconductors with chiral Majorana edge states as shown in recent experiments [He et al. Science 357, 294 (2017), 10.1126/science.aag2792]. However, chiral Majorana modes, being extended, cannot be used for topological quantum computation. In this work, we show that quasi-one-dimensional quantum anomalous Hall structures exhibit a large topological regime (much larger than the two-dimensional case) which supports localized Majorana zero energy modes. The non-Abelian properties of a cross-shaped quantum anomalous Hall junction is shown explicitly by time-dependent calculations. We believe that the proposed quasi-one-dimensional quantum anomalous Hall structures can be easily fabricated for scalable topological quantum computation.

Extreme Soft Limit Observation of Quantum Hall Effect in a 3-d Semiconductor

NASA Astrophysics Data System (ADS)

Bleiweiss, Michael; Yin, Ming; Amirzadeh, Jafar; Preston, Harry; Datta, Timir

2004-03-01

We report on the evidence for quantum hall effect at 38K and in magnetic fields (B) as low as 1k-Orsted. Our specimens were semiconducting, carbon replica opal (CRO) structures. CRO are three dimensional bulk systems where the carbon is grown by CVD into the porous regions in artificial silica opals. The carbon forms layers on top of the silica spheres as eggshells. The shells are of uneven thickness and are perforated at the contacts points of the opal spheres and form a closed packed, three dimensional crystal structure. Plateaus in inverse R_xy that are conjugated with well-defined Subnikov-deHass modulations in R_xx were observed. The quantum steps that are particularly prominent were the states with fill factors v = p/q (p,q are integers) were the well know fractions, 1/3, 1/2, 3/5, 1 and 5/2. QHE steps indicate that the carriers are localized in two-dimensional regions, which may be due to the extremely large surface to volume ratio associated with replica opal structure. From the B-1 vs v straight line, the effective surface carrier density, ns = 2.2 x 10^14 m-2. To the best of our knowledge, the current work is the first to report fractional quantum hall plateaus in a bulk system.

Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

PubMed Central

Zhang, Tian; Lin, Jia-He; Yu, Yan-Mei; Chen, Xiang-Rong; Liu, Wu-Ming

2015-01-01

Bilayer phosphorene attracted considerable interest, giving a potential application in nanoelectronics owing to its natural bandgap and high carrier mobility. However, very little is known regarding the possible usefulness in spintronics as a quantum spin Hall (QSH) state of material characterized by a bulk energy gap and gapless spin-filtered edge states. Here, we report a strain-induced topological phase transition from normal to QSH state in bilayer phosphorene, accompanied by band-inversion that changes number from 0 to 1, which is highly dependent on interlayer stacking. When the bottom layer is shifted by 1/2 unit-cell along zigzag/armchair direction with respect to the top layer, the maximum topological bandgap 92.5 meV is sufficiently large to realize QSH effect even at room-temperature. An optical measurement of QSH effect is therefore suggested in view of the wide optical absorption spectrum extending to far infra-red, making bilayer phosphorene a promising candidate for opto-spintronic devices. PMID:26370771

Wave Function and Emergent SU(2) Symmetry in the ν_{T}=1 Quantum Hall Bilayer.

PubMed

Lian, Biao; Zhang, Shou-Cheng

2018-02-16

We propose a trial wave function for the quantum Hall bilayer system of total filling factor ν_{T}=1 at a layer distance d to magnetic length ℓ ratio d/ℓ=κ_{c1}≈1.1, where the lowest charged excitation is known to have a level crossing. The wave function has two-particle correlations, which fit well with those in previous numerical studies, and can be viewed as a Bose-Einstein condensate of free excitons formed by composite bosons and anticomposite bosons in different layers. We show the free nature of these excitons indicating an emergent SU(2) symmetry for the composite bosons at d/ℓ=κ_{c1}, which leads to the level crossing in low-lying charged excitations. We further show the overlap between the trial wave function, and the ground state of a small size exact diagonalization is peaked near d/ℓ=κ_{c1}, which supports our theory.

Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

PubMed

Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

2016-05-17

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

Husimi function and phase-space analysis of bilayer quantum Hall systems at ν = 2/λ

NASA Astrophysics Data System (ADS)

Calixto, M.; Peón-Nieto, C.

2018-05-01

We propose localization measures in phase space of the ground state of bilayer quantum Hall systems at fractional filling factors , to characterize the three quantum phases (shortly denoted by spin, canted and ppin) for arbitrary -isospin λ. We use a coherent state (Bargmann) representation of quantum states, as holomorphic functions in the 8-dimensional Grassmannian phase-space (a higher-dimensional generalization of the Haldane’s 2-dimensional sphere ). We quantify the localization (inverse volume) of the ground state wave function in phase-space throughout the phase diagram (i.e. as a function of Zeeman, tunneling, layer distance, etc, control parameters) with the Husimi function second moment, a kind of inverse participation ratio that behaves as an order parameter. Then we visualize the different ground state structure in phase space of the three quantum phases, the canted phase displaying a much higher delocalization (a Schrödinger cat structure) than the spin and ppin phases, where the ground state is highly coherent. We find a good agreement between analytic (variational) and numeric diagonalization results.

Formulation of the relativistic quantum Hall effect and parity anomaly

NASA Astrophysics Data System (ADS)

Yonaga, Kouki; Hasebe, Kazuki; Shibata, Naokazu

2016-06-01

We present a relativistic formulation of the quantum Hall effect on Haldane sphere. An explicit form of the pseudopotential is derived for the relativistic quantum Hall effect with/without mass term. We clarify particular features of the relativistic quantum Hall states with the use of the exact diagonalization study of the pseudopotential Hamiltonian. Physical effects of the mass term to the relativistic quantum Hall states are investigated in detail. The mass term acts as an interpolating parameter between the relativistic and nonrelativistic quantum Hall effects. It is pointed out that the mass term unevenly affects the many-body physics of the positive and negative Landau levels as a manifestation of the "parity anomaly." In particular, we explicitly demonstrate the instability of the Laughlin state of the positive first relativistic Landau level with the reduction of the charge gap.

Electron-hole asymmetry, Dirac fermions, and quantum magnetoresistance in BaMnBi 2

DOE PAGES

Li, Lijun; Wang, Kefeng; Graf, D.; ...

2016-03-28

Here, we report two-dimensional quantum transport and Dirac fermions in BaMnBi 2 single crystals. BaMnBi 2 is a layered bad metal with highly anisotropic conductivity and magnetic order below 290 K. Magnetotransport properties, nonzero Berry phase, small cyclotron mass, and the first-principles band structure calculations indicate the presence of Dirac fermions in Bi square nets. Quantum oscillations in the Hall channel suggest the presence of both electron and hole pockets, whereas Dirac and parabolic states coexist at the Fermi level.

Destruction of the Fractional Quantum Hall Effect by Disorder

DOE R&D Accomplishments Database

Laughlin, R. B.

1985-07-01

It is suggested that Hall steps in the fractional quantum Hall effect are physically similar to those in the ordinary quantum Hall effect. This proposition leads to a simple scaling diagram containing a new type of fixed point, which is identified with the destruction of the fractional states by disorder. 15 refs., 3 figs.

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1995-01-01

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Higher (odd) dimensional quantum Hall effect and extended dimensional hierarchy

NASA Astrophysics Data System (ADS)

Hasebe, Kazuki

2017-07-01

We demonstrate dimensional ladder of higher dimensional quantum Hall effects by exploiting quantum Hall effects on arbitrary odd dimensional spheres. Non-relativistic and relativistic Landau models are analyzed on S 2 k - 1 in the SO (2 k - 1) monopole background. The total sub-band degeneracy of the odd dimensional lowest Landau level is shown to be equal to the winding number from the base-manifold S 2 k - 1 to the one-dimension higher SO (2 k) gauge group. Based on the chiral Hopf maps, we clarify the underlying quantum Nambu geometry for odd dimensional quantum Hall effect and the resulting quantum geometry is naturally embedded also in one-dimension higher quantum geometry. An origin of such dimensional ladder connecting even and odd dimensional quantum Hall effects is illuminated from a viewpoint of the spectral flow of Atiyah-Patodi-Singer index theorem in differential topology. We also present a BF topological field theory as an effective field theory in which membranes with different dimensions undergo non-trivial linking in odd dimensional space. Finally, an extended version of the dimensional hierarchy for higher dimensional quantum Hall liquids is proposed, and its relationship to quantum anomaly and D-brane physics is discussed.

A Bowtie Antenna Coupled Tunable Photon-Assisted Tunneling Double Quantum Well (DQW) THz Detector

DTIC Science & Technology

2002-01-01

Proc. Vol. 692 © 2002 Materials Research Society H4.2 A Bowtie Antenna Coupled Tunable Photon-Assisted Tunneling Double Quantum Well (DQW) THz Detector ...on photon-assisted tunneling (PAT) between the two electron layers in a double quantum well (DQW) heterostructure, will be explained. The detector is...the frequency and strength of that radiation. The THz detector discussed in this paper makes use of photon- assisted tunnelling (PAT) between multiple

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Dissipative Quantum Mechanics and Kondo-Like Impurities on Noncommutative Two-Tori

NASA Astrophysics Data System (ADS)

Iacomino, Patrizia; Marotta, Vincenzo; Naddeo, Adele

In a recent paper, by exploiting the notion of Morita equivalence for field theories on noncommutative tori and choosing rational values of the noncommutativity parameter θ (in appropriate units), a general one-to-one correspondence between the m-reduced conformal field theory (CFT) describing a quantum Hall fluid (QHF) at paired states fillings1,2 ν = (m)/(pm+2) and an Abelian noncommutative field theory (NCFT) has been established.3 That allowed us to add new evidence to the relationship between noncommutativity and quantum Hall fluids.4 On the other hand, the m-reduced CFT is equivalent to a system of two massless scalar bosons with a magnetic boundary interaction as introduced in Ref. 5, at the so-called "magic" points. We are then able to describe, within such a framework, the dissipative quantum mechanics of a particle confined to a plane and subject to an external magnetic field normal to it. Here we develop such a point of view by focusing on the case m=2 which corresponds to a quantum Hall bilayer. The key role of a localized impurity which couples the two layers is emphasized and the effect of noncommutativity in terms of generalized magnetic translations (GMT) is fully exploited. As a result, general GMT operators are introduced, in the form of a tensor product, which act on the QHF and defect space respectively, and a comprehensive study of their rich structure is performed.

Subwavelength and directional control of flexural waves in zone-folding induced topological plates

NASA Astrophysics Data System (ADS)

Chaunsali, Rajesh; Chen, Chun-Wei; Yang, Jinkyu

2018-02-01

Inspired by the quantum spin Hall effect shown by topological insulators, we propose a plate structure that can be used to demonstrate the pseudospin Hall effect for flexural waves. The system consists of a thin plate with periodically arranged resonators mounted on its top surface. We extend a technique based on the plane-wave expansion method to identify a double Dirac cone emerging due to the zone-folding in frequency band structures. This particular design allows us to move the double Dirac cone to a lower frequency than the resonating frequency of local resonators. We then manipulate the pattern of local resonators to open subwavelength Bragg band gaps that are topologically distinct. Building on this method, we verify numerically that a waveguide at an interface between two topologically distinct resonating plate structures can be used for guiding low-frequency, spin-dependent one-way flexural waves along a desired path with bends.

Quantum Hall effect in graphene with interface-induced spin-orbit coupling

NASA Astrophysics Data System (ADS)

Cysne, Tarik P.; Garcia, Jose H.; Rocha, Alexandre R.; Rappoport, Tatiana G.

2018-02-01

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

Proximity enhanced quantum spin Hall state in graphene

DOE PAGES

Kou, Liangzhi; Hu, Feiming; Yan, Binghai; ...

2015-02-23

Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin–orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb 2Te 3 (or MoTe 2). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning themore » interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane–Mele interaction in competition with Kekulé deformation and symmetry breaking. As a result, the present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene.« less

Optically adjustable valley Hall current in single-layer transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Pavlidis, Dimitris; Shi, Junxia

2018-02-01

The illumination of a single-layer transition metal dichalcogenide with an elliptically polarized light beam is shown to give rise to a differential rate of inter-band carrier excitation between the valence and conduction states around the valley edges, K and K' . This rate with a linear dependence on the beam ellipticity and inverse of the optical gap manifests as an asymmetric Fermi distribution between the valleys or a non-equilibrium population which under an external field and a Berry curvature induced anomalous velocity, results in an externally tunable finite valley Hall current. Surface imperfections that influence the excitation rates are included through the self-consistent Born approximation. Further, we describe applications centered around circular dichroism, quantum computing, and spin torque via optically excited spin currents within the framework of the suggested formalism. A closing summary points to the possibility of extending the calculations to composite charged particles like trions. The role of the substrate in renormalizing the fundamental band gap and moderating the valley Hall current is also discussed.

Control of fluorescence in quantum emitter and metallic nanoshell hybrids for medical applications

NASA Astrophysics Data System (ADS)

Singh, Mahi R.; Guo, Jiaohan; J. Cid, José M.; De Hoyos Martinez, Jesús E.

2017-03-01

We study the light emission from a quantum emitter and double metallic nanoshell hybrid systems. Quantum emitters act as local sources which transmit their light efficiently due to a double nanoshell near field. The double nanoshell consists of a dielectric core and two outer nanoshells. The first nanoshell is made of a metal, and the second spacer nanoshell is made of a dielectric material or human serum albumin. We have calculated the fluorescence emission for a quantum emitter-double nanoshell hybrid when it is injected in an animal or a human body. Surface plasmon polariton resonances in the double nanoshell are calculated using Maxwell's equations in the quasi-static approximation, and the fluorescence emission is evaluated using the density matrix method in the presence of dipole-dipole interactions. We have compared our theory with two fluorescence experiments in hybrid systems in which the quantum emitter is Indocyanine Green or infrared fluorescent molecules. The outer spacer nanoshell of double metallic nanoshells consists of silica and human serum albumin with variable thicknesses. Our theory explains the enhancement of fluorescence spectra in both experiments. We find that the thickness of the spacer nanoshell layer increases the enhancement when the fluorescence decreases. The enhancement of the fluorescence depends on the type of quantum emitter, spacer layer, and double nanoshell. We also found that the peak of the fluorescence spectrum can be shifted by changing the shape and the size of the nanoshell. The fluorescence spectra can be switched from one peak to two peaks by removing the degeneracy of excitonic states in the quantum emitter. Hence, using these properties, one can use these hybrids as sensing and switching devices for applications in medicine.

A programmable quantum current standard from the Josephson and the quantum Hall effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poirier, W., E-mail: wilfrid.poirier@lne.fr; Lafont, F.; Djordjevic, S.

We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable quantum current source, a quantum ampere-meter, and a simplified closure of the quantum metrological triangle. Moreover, very accurate universality tests of the QHE could be performed by comparing PQCS based on different QHRs.

Quantum Hall Ferroelectrics and Nematics in Multivalley Systems

NASA Astrophysics Data System (ADS)

Sodemann, Inti; Zhu, Zheng; Fu, Liang

2017-10-01

We study broken symmetry states at integer Landau-level fillings in multivalley quantum Hall systems whose low-energy dispersions are anisotropic. When the Fermi surface of individual pockets lacks twofold rotational symmetry, like in bismuth (111) [Feldman et al. , Observation of a Nematic Quantum Hall Liquid on the Surface of Bismuth, Science 354, 316 (2016), 10.1126/science.aag1715] and in Sn1 -xPbxSe (001) [Dziawa et al., Topological Crystalline Insulator States in Pb1 -xSnxSe , Nat. Mater. 11, 1023 (2012), 10.1038/nmat3449] surfaces, interactions tend to drive the formation of quantum Hall ferroelectric states. We demonstrate that the dipole moment in these states has an intimate relation to the Fermi surface geometry of the parent metal. In quantum Hall nematic states, like those arising in AlAs quantum wells, we demonstrate the existence of unusually robust Skyrmion quasiparticles.

Revealing topological Dirac fermions at the surface of strained HgTe thin films via quantum Hall transport spectroscopy

NASA Astrophysics Data System (ADS)

Thomas, C.; Crauste, O.; Haas, B.; Jouneau, P.-H.; Bäuerle, C.; Lévy, L. P.; Orignac, E.; Carpentier, D.; Ballet, P.; Meunier, T.

2017-12-01

We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides insights in the quantum Hall effect of topological insulator (TI) slabs, in the crossover regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore circuit functionalities in spintronics and quantum nanoelectronics.

A holographic model for the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Lippert, Matthew; Meyer, René; Taliotis, Anastasios

2015-01-01

Experimental data for fractional quantum Hall systems can to a large extent be explained by assuming the existence of a Γ0(2) modular symmetry group commuting with the renormalization group flow and hence mapping different phases of two-dimensional electron gases into each other. Based on this insight, we construct a phenomenological holographic model which captures many features of the fractional quantum Hall effect. Using an -invariant Einstein-Maxwell-axio-dilaton theory capturing the important modular transformation properties of quantum Hall physics, we find dyonic diatonic black hole solutions which are gapped and have a Hall conductivity equal to the filling fraction, as expected for quantum Hall states. We also provide several technical results on the general behavior of the gauge field fluctuations around these dyonic dilatonic black hole solutions: we specify a sufficient criterion for IR normalizability of the fluctuations, demonstrate the preservation of the gap under the action, and prove that the singularity of the fluctuation problem in the presence of a magnetic field is an accessory singularity. We finish with a preliminary investigation of the possible IR scaling solutions of our model and some speculations on how they could be important for the observed universality of quantum Hall transitions.

Valley-chiral quantum Hall state in graphene superlattice structure

NASA Astrophysics Data System (ADS)

Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

2016-05-01

We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

Floquet high Chern insulators in periodically driven chirally stacked multilayer graphene

NASA Astrophysics Data System (ADS)

Li, Si; Liu, Cheng-Cheng; Yao, Yugui

2018-03-01

Chirally stacked N-layer graphene is a semimetal with ±p N band-touching at two nonequivalent corners in its Brillioun zone. We predict that an off-resonant circularly polarized light (CPL) drives chirally stacked N-layer graphene into a Floquet Chern insulators (FCIs), aka quantum anomalous Hall insulators, with tunable high Chern number C F = ±N and large gaps. A topological phase transition between such a FCI and a valley Hall (VH) insulator with high valley Chern number C v = ±N induced by a voltage gate can be engineered by the parameters of the CPL and voltage gate. We propose a topological domain wall between the FCI and VH phases, along which perfectly valley-polarized N-channel edge states propagate unidirectionally without backscattering.

Large capacitance enhancement induced by metal-doping in graphene-based supercapacitors: a first-principles-based assessment.

PubMed

Paek, Eunsu; Pak, Alexander J; Hwang, Gyeong S

2014-08-13

Chemically doped graphene-based materials have recently been explored as a means to improve the performance of supercapacitors. In this work, we investigate the effects of 3d transition metals bound to vacancy sites in graphene with [BMIM][PF6] ionic liquid on the interfacial capacitance; these results are compared to the pristine graphene case with particular attention to the relative contributions of the quantum and electric double layer capacitances. Our study highlights that the presence of metal-vacancy complexes significantly increases the availability of electronic states near the charge neutrality point, thereby enhancing the quantum capacitance drastically. In addition, the use of metal-doped graphene electrodes is found to only marginally influence the microstructure and capacitance of the electric double layer. Our findings indicate that metal-doping of graphene-like electrodes can be a promising route toward increasing the interfacial capacitance of electrochemical double layer capacitors, primarily by enhancing the quantum capacitance.

Representation of the Coulomb Matrix Elements by Means of Appell Hypergeometric Function F 2

NASA Astrophysics Data System (ADS)

Bentalha, Zine el abidine

2018-06-01

Exact analytical representation for the Coulomb matrix elements by means of Appell's double series F 2 is derived. The finite sum obtained for the Appell function F 2 allows us to evaluate explicitly the matrix elements of the two-body Coulomb interaction in the lowest Landau level. An application requiring the matrix elements of Coulomb potential in quantum Hall effect regime is presented.

Tunable-φ Josephson junction with a quantum anomalous Hall insulator

NASA Astrophysics Data System (ADS)

Sakurai, Keimei; Ikegaya, Satoshi; Asano, Yasuhiro

2017-12-01

We theoretically study the Josephson current in a superconductor/quantum anomalous Hall insulator/superconductor junction by using the lattice Green function technique. When an in-plane external Zeeman field is applied to the quantum anomalous Hall insulator, the Josephson current J flows without a phase difference across the junction θ . The phase shift φ appearing in the current-phase relationship J ∝sin(θ -φ ) is proportional to the amplitude of Zeeman fields and depends on the direction of Zeeman fields. A phenomenological analysis of the Andreev reflection processes explains the physical origin of φ . In a quantum anomalous Hall insulator, time-reversal symmetry and mirror-reflection symmetry are broken simultaneously. However, magnetic mirror-reflection symmetry is preserved. Such characteristic symmetry properties enable us to have a tunable φ junction with a quantum Hall insulator.

Charge transport in quantum dot organic solar cells with Si quantum dots sandwiched between poly(3-hexylthiophene) (P3HT) absorber and bathocuproine (BCP) transport layers

NASA Astrophysics Data System (ADS)

Verma, Upendra Kumar; Kumar, Brijesh

2017-10-01

We have modeled a multilayer quantum dot organic solar cell that explores the current-voltage characteristic of the solar cell whose characteristics can be tuned by varying the fabrication parameters of the quantum dots (QDs). The modeled device consists of a hole transport layer (HTL) which doubles up as photon absorbing layer, several quantum dot layers, and an electron transport layer (ETL). The conduction of charge carriers in HTL and ETL has been modeled by the drift-diffusion transport mechanism. The conduction and recombination in the quantum dot layers are described by a system of coupled rate equations incorporating tunneling and bimolecular recombination. Analysis of QD-solar cells shows improved device performance compared to the similar bilayer and trilayer device structures without QDs. Keeping other design parameters constant, solar cell characteristics can be controlled by the quantum dot layers. Bimolecular recombination coefficient of quantum dots is a prime factor which controls the open circuit voltage (VOC) without any significant reduction in short circuit current (JSC).

3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

NASA Astrophysics Data System (ADS)

Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

2017-09-01

The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

Critical layer thickness in In/sub 0. 2/Ga/sub 0. 8/As/GaAs single strained quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fritz, I.J.; Gourley, P.L.; Dawson, L.R.

1987-09-28

We report accurate determination of the critical layer thickness (CLT) for single strained-layer epitaxy in the InGaAs/GaAs system. Our samples were molecular beam epitaxially grown, selectively doped, single quantum well structures comprising a strained In/sub 0.2/Ga/sub 0.8/As layer imbedded in GaAs. We determined the CLT by two sensitive techniques: Hall-effect measurements at 77 K and photoluminescence microscopy. Both techniques indicate a CLT of about 20 nm. This value is close to that determined previously (--15 nm) for comparable strained-layer superlattices, but considerably less than the value of --45 nm suggested by recent x-ray rocking-curve measurements. We show by a simplemore » calculation that photoluminescence microscopy is more than two orders of magnitude more sensitive to dislocations than x-ray diffraction. Our results re-emphasize the necessity of using high-sensitivity techniques for accurate determination of critical layer thicknesses.« less

Bending strain engineering in quantum spin hall system for controlling spin currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bing; Jin, Kyung-Hwan; Cui, Bin

Quantum spin Hall system can exhibit exotic spin transport phenomena, mediated by its topological edge states. The concept of bending strain engineering to tune the spin transport properties of a quantum spin Hall system is demonstrated. Here, we show that bending strain can be used to control the spin orientation of counter-propagating edge states of a quantum spin system to generate a non-zero spin current. This physics mechanism can be applied to effectively tune the spin current and pure spin current decoupled from charge current in a quantum spin Hall system by control of its bending curvature. Moreover, the curvedmore » quantum spin Hall system can be achieved by the concept of topological nanomechanical architecture in a controllable way, as demonstrated by the material example of Bi/Cl/Si(111) nanofilm. This concept of bending strain engineering of spins via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.« less

Bending strain engineering in quantum spin hall system for controlling spin currents

DOE PAGES

Huang, Bing; Jin, Kyung-Hwan; Cui, Bin; ...

2017-06-16

Quantum spin Hall system can exhibit exotic spin transport phenomena, mediated by its topological edge states. The concept of bending strain engineering to tune the spin transport properties of a quantum spin Hall system is demonstrated. Here, we show that bending strain can be used to control the spin orientation of counter-propagating edge states of a quantum spin system to generate a non-zero spin current. This physics mechanism can be applied to effectively tune the spin current and pure spin current decoupled from charge current in a quantum spin Hall system by control of its bending curvature. Moreover, the curvedmore » quantum spin Hall system can be achieved by the concept of topological nanomechanical architecture in a controllable way, as demonstrated by the material example of Bi/Cl/Si(111) nanofilm. This concept of bending strain engineering of spins via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.« less

Numerical investigation of gapped edge states in fractional quantum Hall-superconductor heterostructures

NASA Astrophysics Data System (ADS)

Repellin, Cécile; Cook, Ashley M.; Neupert, Titus; Regnault, Nicolas

2018-03-01

Fractional quantum Hall-superconductor heterostructures may provide a platform towards non-abelian topological modes beyond Majoranas. However their quantitative theoretical study remains extremely challenging. We propose and implement a numerical setup for studying edge states of fractional quantum Hall droplets with a superconducting instability. The fully gapped edges carry a topological degree of freedom that can encode quantum information protected against local perturbations. We simulate such a system numerically using exact diagonalization by restricting the calculation to the quasihole-subspace of a (time-reversal symmetric) bilayer fractional quantum Hall system of Laughlin ν = 1/3 states. We show that the edge ground states are permuted by spin-dependent flux insertion and demonstrate their fractional 6π Josephson effect, evidencing their topological nature and the Cooper pairing of fractionalized quasiparticles. The versatility and efficiency of our setup make it a well suited method to tackle wider questions of edge phases and phase transitions in fractional quantum Hall systems.

Crossover to the anomalous quantum regime in the extrinsic spin Hall effect of graphene

NASA Astrophysics Data System (ADS)

Ferreira, Aires; Milletari, Mirco

Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density dependence of the extrinsic spin Hall effect in spin-orbit coupled graphene. We present a nonperturbative quantum diagrammatic calculation of the spin Hall response function in the strong-coupling regime that incorporates skew scattering and anomalous impurity density-independent contributions on equal footing. The spin Hall conductivity dependence on Fermi energy and electron-impurity interaction strength reveals the existence of experimentally accessible regions where anomalous quantum processes dominate. Our findings suggest that spin-orbit-coupled graphene is an ideal model system for probing the competition between semiclassical and bona fide quantum scattering mechanisms underlying the spin Hall effect. A.F. gratefully acknowledges the financial support of the Royal Society (U.K.).

Electric-field control of conductance in metal quantum point contacts by electric-double-layer gating

NASA Astrophysics Data System (ADS)

Shibata, K.; Yoshida, K.; Daiguji, K.; Sato, H.; , T., Ii; Hirakawa, K.

2017-10-01

An electric-field control of quantized conductance in metal (gold) quantum point contacts (QPCs) is demonstrated by adopting a liquid-gated electric-double-layer (EDL) transistor geometry. Atomic-scale gold QPCs were fabricated by applying the feedback-controlled electrical break junction method to the gold nanojunction. The electric conductance in gold QPCs shows quantized conductance plateaus and step-wise increase/decrease by the conductance quantum, G0 = 2e2/h, as EDL-gate voltage is swept, demonstrating a modulation of the conductance of gold QPCs by EDL gating. The electric-field control of conductance in metal QPCs may open a way for their application to local charge sensing at room temperature.

Observation of the fractional quantum Hall effect in graphene.

PubMed

Bolotin, Kirill I; Ghahari, Fereshte; Shulman, Michael D; Stormer, Horst L; Kim, Philip

2009-11-12

When electrons are confined in two dimensions and subject to strong magnetic fields, the Coulomb interactions between them can become very strong, leading to the formation of correlated states of matter, such as the fractional quantum Hall liquid. In this strong quantum regime, electrons and magnetic flux quanta bind to form complex composite quasiparticles with fractional electronic charge; these are manifest in transport measurements of the Hall conductivity as rational fractions of the elementary conductance quantum. The experimental discovery of an anomalous integer quantum Hall effect in graphene has enabled the study of a correlated two-dimensional electronic system, in which the interacting electrons behave like massless chiral fermions. However, owing to the prevailing disorder, graphene has so far exhibited only weak signatures of correlated electron phenomena, despite intense experimental and theoretical efforts. Here we report the observation of the fractional quantum Hall effect in ultraclean, suspended graphene. In addition, we show that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap. These newly discovered quantum states offer the opportunity to study correlated Dirac fermions in graphene in the presence of large magnetic fields.

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

NASA Astrophysics Data System (ADS)

Knapp, T. J.; Mohr, R. T.; Li, Yize Stephanie; Thorgrimsson, Brandur; Foote, Ryan H.; Wu, Xian; Ward, Daniel R.; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

We report the characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. Previously, all heterostructures used to form quantum dots were created using the strain-grading method of strain relaxation, a method that necessarily introduces misfit dislocations into a heterostructure and thereby degrades the reproducibility of quantum devices. Using a SiGe nanomembrane as a virtual substrate eliminates the need for misfit dislocations but requires a wet-transfer process that results in a non-epitaxial interface in close proximity to the quantum dots. We show that this interface does not prevent the formation of quantum dots, and is compatible with a tunable inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of the applied magnetic field. This work was supported in part by ARO (W911NF-12-0607), NSF (DMR-1206915, PHY-1104660), and the United States Department of Defense. The views and conclusions contained in this document are those of the author and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. T.J. Knapp et al. (2015). arXiv:1510.08888 [cond-mat.mes-hall].

The quantum Hall effects: Philosophical approach

NASA Astrophysics Data System (ADS)

Lederer, P.

2015-05-01

The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.

Nematic fluctuations balancing the zoo of phases in half-filled quantum Hall systems

NASA Astrophysics Data System (ADS)

Mesaros, Andrej; Lawler, Michael J.; Kim, Eun-Ah

2017-03-01

Half-filled Landau levels form a zoo of strongly correlated phases. These include non-Fermi-liquids (NFLs), fractional quantum Hall (FQH) states, nematic phases, and FQH nematic phases. This diversity begs the following question: what keeps the balance between the seemingly unrelated phases? The answer is elusive because the Halperin-Lee-Read description that offers a natural departure point is inherently strongly coupled. However, the observed nematic phases suggest that nematic fluctuations play an important role. To study this possibility, we apply a recently formulated controlled double-expansion approach in large-N composite fermion flavors and small ɛ nonanalytic bosonic action to the case with both gauge and nematic boson fluctuations. In the vicinity of a nematic quantum critical line, we find that depending on the amount of screening of the gauge- and nematic-mediated interactions controlled by ɛ 's, the renormalization-group flow points to all four mentioned correlated phases. When pairing preempts the nematic phase, NFL behavior is possible at temperatures above the pairing transition. We conclude by discussing measurements at low tilt angles, which could reveal the stabilization of the FQH phase by nematic fluctuations.

Numerical studies of the topological Chern numbers in two dimensional electron system

NASA Astrophysics Data System (ADS)

Sheng, Donna

2004-03-01

I will report on the numerical results of the exact calculation of the topological Chern numbers in fractional and bilayer quantum Hall systems[1]. I will show that following the evolution of the Chern numbers as a function of the disorder strength and/or layer separations, various quantum phase transitions as well as the characteristic transport properties of the phases, can be determined. The hidden topological ordering in other two dimensional electron systems will also be discussed. 1. D. N. Sheng et. al., Phys. Rev. Lett. 90, 256802 (2003).

Capacitance of carbon-based electrical double-layer capacitors.

PubMed

Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

2014-01-01

Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Liu, Yang; Magill, B. A.; Moon, B. H.; Engel, L. W.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.

2014-06-01

In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dyer, G. C.; Olson, B. V.; Hawkins, S. D.

2016-01-04

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.

Quantum energy teleportation in a quantum Hall system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yusa, Go; Izumida, Wataru; Hotta, Masahiro

2011-09-15

We propose an experimental method for a quantum protocol termed quantum energy teleportation (QET), which allows energy transportation to a remote location without physical carriers. Using a quantum Hall system as a realistic model, we discuss the physical significance of QET and estimate the order of energy gain using reasonable experimental parameters.

Quantum Entanglement and the Topological Order of Fractional Hall States

NASA Astrophysics Data System (ADS)

Rezayi, Edward

2015-03-01

Fractional quantum Hall states or, more generally, topological phases of matter defy Landau classification based on order parameter and broken symmetry. Instead they have been characterized by their topological order. Quantum information concepts, such as quantum entanglement, appear to provide the most efficient method of detecting topological order solely from the knowledge of the ground state wave function. This talk will focus on real-space bi-partitioning of quantum Hall states and will present both exact diagonalization and quantum Monte Carlo studies of topological entanglement entropy in various geometries. Results on the torus for non-contractible cuts are quite rich and, through the use of minimum entropy states, yield the modular S-matrix and hence uniquely determine the topological order, as shown in recent literature. Concrete examples of minimum entropy states from known quantum Hall wave functions and their corresponding quantum numbers, used in exact diagonalizations, will be given. In collaboration with Clare Abreu and Raul Herrera. Supported by DOE Grant DE-SC0002140.

Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering

DOE PAGES

Koirala, Nikesh; Han, Myung -Geun; Brahlek, Matthew; ...

2015-11-19

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In 2Se 3/(Bi 0.5In 0.5) 2Se 3 heterostructure, we introduce a quantum generation of Bi 2Se 3 films with an order of magnitude enhanced mobilities than before. Furthermore, this scheme has led to the first observation of the quantum Hallmore » effect in Bi 2Se 3.« less

Large quantum rings in the ν > 1 quantum Hall regime.

PubMed

Räsänen, E; Aichinger, M

2009-01-14

We study computationally the ground-state properties of large quantum rings in the filling-factor ν>1 quantum Hall regime. We show that the arrangement of electrons into different Landau levels leads to clear signatures in the total energies as a function of the magnetic field. In this context, we discuss possible approximations for the filling factor ν in the system. We are able to characterize integer-ν states in quantum rings in an analogy with conventional quantum Hall droplets. We also find a partially spin-polarized state between ν = 2 and 3. Despite the specific topology of a quantum ring, this state is strikingly reminiscent of the recently found ν = 5/2 state in a quantum dot.

Observation of the Quantum Anomalous Hall Insulator to Anderson Insulator Quantum Phase Transition and its Scaling Behavior.

PubMed

Chang, Cui-Zu; Zhao, Weiwei; Li, Jian; Jain, J K; Liu, Chaoxing; Moodera, Jagadeesh S; Chan, Moses H W

2016-09-16

Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in the quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall insulator to an Anderson insulator in a magnetic topological insulator by tuning the chemical potential. Our experiment demonstrates the existence of scaling behavior from which we extract the critical exponent for this quantum phase transition. We expect that our work will motivate much further investigation of many properties of quantum phase transition in this new context.

Geometric construction of quantum hall clustering Hamiltonians

DOE PAGES

Lee, Ching Hua; Papić, Zlatko; Thomale, Ronny

2015-10-08

In this study, many fractional quantum Hall wave functions are known to be unique highest-density zero modes of certain “pseudopotential” Hamiltonians. While a systematic method to construct such parent Hamiltonians has been available for the infinite plane and sphere geometries, the generalization to manifolds where relative angular momentum is not an exact quantum number, i.e., the cylinder or torus, remains an open problem. This is particularly true for non-Abelian states, such as the Read-Rezayi series (in particular, the Moore-Read and Read-Rezayi Z 3 states) and more exotic nonunitary (Haldane-Rezayi and Gaffnian) or irrational (Haffnian) states, whose parent Hamiltonians involve complicatedmore » many-body interactions. Here, we develop a universal geometric approach for constructing pseudopotential Hamiltonians that is applicable to all geometries. Our method straightforwardly generalizes to the multicomponent SU(n) cases with a combination of spin or pseudospin (layer, subband, or valley) degrees of freedom. We demonstrate the utility of our approach through several examples, some of which involve non-Abelian multicomponent states whose parent Hamiltonians were previously unknown, and we verify the results by numerically computing their entanglement properties.« less

Electromagnetic waves in a topological insulator thin film stack: helicon-like wave mode and photonic band structure.

PubMed

Inoue, Jun-ichi

2013-09-09

We theoretically explore the electromagnetic modes specific to a topological insulator superlattice in which topological and conventional insulator thin films are stacked periodically. In particular, we obtain analytic formulas for low energy mode that corresponds to a helicon wave, as well as those for photonic bands. We illustrate that the system can be modeled as a stack of quantum Hall layers whose conductivity tensors alternately change signs, and then we analyze the photonic band structures. This subject is a natural extension of a previous study by Tselis et al., which took into consideration a stack of identical quantum Hall layers but their discussion was limited into a low energy mode. Thus we provide analytic formulas for photonic bands and compare their features between the two systems. Our central findings in the topological insulator superlattice are that a low energy mode corresponding to a helicon wave has linear dispersion instead of the conventional quadratic form, and that a robust gapless photonic band appears although the system considered has spacial periodicity. In addition, we demonstrate that the photonic bands agree with the numerically calculated transmission spectra.

Integer, fractional, and anomalous quantum Hall effects explained with Eyring's rate process theory and free volume concept.

PubMed

Hao, Tian

2017-02-22

The Hall effects, especially the integer, fractional and anomalous quantum Hall effects, have been addressed using Eyring's rate process theory and free volume concept. The basic assumptions are that the conduction process is a common rate controlled "reaction" process that can be described with Eyring's absolute rate process theory; the mobility of electrons should be dependent on the free volume available for conduction electrons. The obtained Hall conductivity is clearly quantized as with prefactors related to both the magnetic flux quantum number and the magnetic quantum number via the azimuthal quantum number, with and without an externally applied magnetic field. This article focuses on two dimensional (2D) systems, but the approaches developed in this article can be extended to 3D systems.

Unconventional Topological Phase Transition in Two-Dimensional Systems with Space-Time Inversion Symmetry

NASA Astrophysics Data System (ADS)

Ahn, Junyeong; Yang, Bohm-Jung

2017-04-01

We study a topological phase transition between a normal insulator and a quantum spin Hall insulator in two-dimensional (2D) systems with time-reversal and twofold rotation symmetries. Contrary to the case of ordinary time-reversal invariant systems, where a direct transition between two insulators is generally predicted, we find that the topological phase transition in systems with an additional twofold rotation symmetry is mediated by an emergent stable 2D Weyl semimetal phase between two insulators. Here the central role is played by the so-called space-time inversion symmetry, the combination of time-reversal and twofold rotation symmetries, which guarantees the quantization of the Berry phase around a 2D Weyl point even in the presence of strong spin-orbit coupling. Pair creation and pair annihilation of Weyl points accompanying partner exchange between different pairs induces a jump of a 2D Z2 topological invariant leading to a topological phase transition. According to our theory, the topological phase transition in HgTe /CdTe quantum well structure is mediated by a stable 2D Weyl semimetal phase because the quantum well, lacking inversion symmetry intrinsically, has twofold rotation about the growth direction. Namely, the HgTe /CdTe quantum well can show 2D Weyl semimetallic behavior within a small but finite interval in the thickness of HgTe layers between a normal insulator and a quantum spin Hall insulator. We also propose that few-layer black phosphorus under perpendicular electric field is another candidate system to observe the unconventional topological phase transition mechanism accompanied by the emerging 2D Weyl semimetal phase protected by space-time inversion symmetry.

Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

PubMed

Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

2016-06-07

Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

Localization in a quantum spin Hall system.

PubMed

Onoda, Masaru; Avishai, Yshai; Nagaosa, Naoto

2007-02-16

The localization problem of electronic states in a two-dimensional quantum spin Hall system (that is, a symplectic ensemble with topological term) is studied by the transfer matrix method. The phase diagram in the plane of energy and disorder strength is exposed, and demonstrates "levitation" and "pair annihilation" of the domains of extended states analogous to that of the integer quantum Hall system. The critical exponent nu for the divergence of the localization length is estimated as nu congruent with 1.6, which is distinct from both exponents pertaining to the conventional symplectic and the unitary quantum Hall systems. Our analysis strongly suggests a different universality class related to the topology of the pertinent system.

Quantum Hall physics: Hierarchies and conformal field theory techniques

NASA Astrophysics Data System (ADS)

Hansson, T. H.; Hermanns, M.; Simon, S. H.; Viefers, S. F.

2017-04-01

The fractional quantum Hall effect, being one of the most studied phenomena in condensed matter physics during the past 30 years, has generated many ground-breaking new ideas and concepts. Very early on it was realized that the zoo of emerging states of matter would need to be understood in a systematic manner. The first attempts to do this, by Haldane and Halperin, set an agenda for further work which has continued to this day. Since that time the idea of hierarchies of quasiparticles condensing to form new states has been a pillar of our understanding of fractional quantum Hall physics. In the 30 years that have passed since then, a number of new directions of thought have advanced our understanding of fractional quantum Hall states and have extended it in new and unexpected ways. Among these directions is the extensive use of topological quantum field theories and conformal field theories, the application of the ideas of composite bosons and fermions, and the study of non-Abelian quantum Hall liquids. This article aims to present a comprehensive overview of this field, including the most recent developments.

Strategy for synthesizing quantum dot-layered double hydroxide nanocomposites and their enhanced photoluminescence and photostability.

PubMed

Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee

2013-01-08

Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

NASA Astrophysics Data System (ADS)

Falson, Joseph; Kawasaki, Masashi

2018-05-01

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

Quantum Effects on the Capacitance of Graphene-Based Electrodes

DOE PAGES

Zhan, Cheng; Neal, Justin; Wu, Jianzhong; ...

2015-09-08

We recently measured quantum capacitance for electric double layers (EDL) at electrolyte/graphene interfaces. However, the importance of quantum capacitance in realistic carbon electrodes is not clear. Toward understanding that from a theoretical perspective, here we studied the quantum capacitance and total capacitance of graphene electrodes as a function of the number of graphene layers. The quantum capacitance was obtained from electronic density functional theory based on fixed band approximation with an implicit solvation model, while the EDL capacitances were from classical density functional theory. We found that quantum capacitance plays a dominant role in total capacitance of the single-layer graphenemore » both in aqueous and ionic-liquid electrolytes but the contribution decreases as the number of graphene layers increases. Moreover, the total integral capacitance roughly levels off and is dominated by the EDL capacitance beyond about four graphene layers. Finally, because many porous carbons have nanopores with stacked graphene layers at the surface, this research provides a good estimate of the effect of quantum capacitance on their electrochemical performance.« less

Stability of excitons in double quantum well: Through electron and holes transmission probabilities

NASA Astrophysics Data System (ADS)

Vignesh, G.; Nithiananthi, P.

2017-05-01

Stability of excitons has been analyzed using the transmission probability of its constituent particles in GaAs/Al0.3Ga0.7As Double Quantum Well (DQW) structure by varying well and barrier layer thickness. The effective mass approximation is used and anisotropy in material properties are also considered to get realistic situations. It is observed that tuning barrier layer avails many resonance peaks for the transmission and tuning well width admits maximum transmission at narrow well widths. Every saddle point of the observed transmission coefficients decides the formation, strength and transportation of excitons in DQW.

Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry

DOE PAGES

Ma, Eric Yue; Calvo, M. Reyes; Wang, Jing; ...

2015-05-26

The realization of quantum spin Hall effect in HgTe quantum wells is considered a milestone in the discovery of topological insulators. Quantum spin Hall states are predicted to allow current flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction yet to be experimentally verified is the breakdown of the edge conduction under broken time-reversal symmetry. Here we first establish a systematic framework for the magnetic field dependence of electrostatically gated quantum spin Hall devices. We then study edge conduction of an inverted quantum well device under broken time-reversal symmetry using microwave impedance microscopy,more » and compare our findings to a non-inverted device. At zero magnetic field, only the inverted device shows clear edge conduction in its local conductivity profile, consistent with theory. Surprisingly, the edge conduction persists up to 9 T with little change. Finally, this indicates physics beyond simple quantum spin Hall model, including material-specific properties and possibly many-body effects.« less

Spin measurement in an undoped Si/SiGe double quantum dot incorporating a micromagnet

NASA Astrophysics Data System (ADS)

Wu, Xian; Ward, Daniel; Prance, Jonathan; Kim, Dohun; Shi, Zhan; Mohr, Robert; Gamble, John; Savage, Donald; Lagally, Max; Friesen, Mark; Coppersmith, Susan; Eriksson, Mark

2014-03-01

We present measurements on a double dot formed in an accumulation-mode undoped Si/SiGe heterostructure. The double dot incorporates a proximal micromagnet to generate a stable magnetic field difference between the quantum dots. The gate design incorporates two layers of gates, and the upper layer of gates is split into five different sections to decrease crosstalk between different gates. A novel pattern of the lower layer gates enhances the tunability of tunnel rates. We will describe our attempts to create a singlet-triplet qubit in this device. This work was supported in part by ARO(W911NF-12-0607), NSF(DMR-1206915), and the United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. Now works at Lancaster University, UK.

Direct measurement of discrete valley and orbital quantum numbers in bilayer graphene.

PubMed

Hunt, B M; Li, J I A; Zibrov, A A; Wang, L; Taniguchi, T; Watanabe, K; Hone, J; Dean, C R; Zaletel, M; Ashoori, R C; Young, A F

2017-10-16

The high magnetic field electronic structure of bilayer graphene is enhanced by the spin, valley isospin, and an accidental orbital degeneracy, leading to a complex phase diagram of broken symmetry states. Here, we present a technique for measuring the layer-resolved charge density, from which we directly determine the valley and orbital polarization within the zero energy Landau level. Layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital order, including previously unobserved orbitally polarized states stabilized by skew interlayer hopping. We fit our data to a model that captures both single-particle and interaction-induced anisotropies, providing a complete picture of this correlated electron system. The resulting roadmap to symmetry breaking paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two-dimensional materials where layer polarization maps to the valley or spin quantum numbers.The phase diagram of bilayer graphene at high magnetic fields has been an outstanding question, with orders possibly between multiple internal quantum degrees of freedom. Here, Hunt et al. report the measurement of the valley and orbital order, allowing them to directly reconstruct the phase diagram.

Fractional Quantum Hall Effect in n = 0 Landau Band of Graphene with Chern Number Matrix

NASA Astrophysics Data System (ADS)

Kudo, Koji; Hatsugai, Yasuhiro

2018-06-01

Fully taking into account the honeycomb lattice structure, fractional quantum Hall states of graphene are considered by a pseudopotential projected into the n = 0 Landau band. By using chirality as an internal degree of freedom, the Chern number matrices are defined and evaluated numerically. Quantum phase transition induced by changing a range of the interaction is demonstrated that is associated with chirality ferromagnetism. The chirality-unpolarized ground state is consistent with the Halperin 331 state of the bilayer quantum Hall system.

Role of chiral quantum Hall edge states in nuclear spin polarization.

PubMed

Yang, Kaifeng; Nagase, Katsumi; Hirayama, Yoshiro; Mishima, Tetsuya D; Santos, Michael B; Liu, Hongwu

2017-04-20

Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and, in particular, the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on the nuclear spin polarization. A side-by-side comparison of the RDNMR signals from Hall bar and Corbino disk configurations allows us to distinguish the contributions of bulk and edge states to DNP in QHF. The unidirectional current flow along chiral edge states makes the polarization robust to thermal fluctuations at high temperatures and makes it possible to observe a reciprocity principle of the RDNMR response. These findings help us better understand complex NMR responses in QHF, which has important implications for the development of RDNMR techniques.

Hall viscosity and electromagnetic response of electrons in graphene

NASA Astrophysics Data System (ADS)

Sherafati, Mohammad; Principi, Alessandro; Vignale, Giovanni

The Hall viscosity is a dissipationless component of the viscosity tensor of an electron liquid with broken time- reversal symmetry, such as a two-dimensional electron gas (2DEG) in the quantum Hall state. Similar to the Hall conductivity, the Hall viscosity is an anomalous transport coefficient; however, while the former is connected with the current response, the latter stems from the stress response to a geometric deformation. For a Galilean-invariant system such as 2DEG, the current density is indeed the generator of the geometric deformation: therefore a connection between the Hall connectivity and viscosity is expected and by now well established. In the case of graphene, a non-Galilean-invariant system, the existence of such a connection is far from obvious, as the current operator is essentially different from the momentum operator. In this talk, I will first present our results of the geometric Hall viscosity of electrons in single-layer graphene. Then, from the expansion of the nonlocal Hall conductivity for small wave vectors, I demonstrate that, in spite of the lack of Galilean invariance, an effective mass can be defined such that the relationship between the Hall conductivity and the viscosity retains the form it has in Galilean-invariant systems, not only for a large number of occupied Landau levels, but also, with very high accuracy, for the undoped system.

Few layer epitaxial germanene: a novel two-dimensional Dirac material

NASA Astrophysics Data System (ADS)

Dávila, María Eugenia; Le Lay, Guy

2016-02-01

Monolayer germanene, a novel graphene-like germanium allotrope akin to silicene has been recently grown on metallic substrates. Lying directly on the metal surfaces the reconstructed atom-thin sheets are prone to lose the massless Dirac fermion character and unique associated physical properties of free standing germanene. Here, we show that few layer germanene, which we create by dry epitaxy on a gold template, possesses Dirac cones thanks to a reduced interaction. This finding established on synchrotron-radiation-based photoemission, scanning tunneling microscopy imaging and surface electron diffraction places few layer germanene among the rare two-dimensional Dirac materials. Since germanium is currently used in the mainstream Si-based electronics, perspectives of using germanene for scaling down beyond the 5 nm node appear very promising. Other fascinating properties seem at hand, typically the robust quantum spin Hall effect for applications in spintronics and the engineering of Floquet Majorana fermions by light for quantum computing.

Few layer epitaxial germanene: a novel two-dimensional Dirac material.

PubMed

Dávila, María Eugenia; Le Lay, Guy

2016-02-10

Monolayer germanene, a novel graphene-like germanium allotrope akin to silicene has been recently grown on metallic substrates. Lying directly on the metal surfaces the reconstructed atom-thin sheets are prone to lose the massless Dirac fermion character and unique associated physical properties of free standing germanene. Here, we show that few layer germanene, which we create by dry epitaxy on a gold template, possesses Dirac cones thanks to a reduced interaction. This finding established on synchrotron-radiation-based photoemission, scanning tunneling microscopy imaging and surface electron diffraction places few layer germanene among the rare two-dimensional Dirac materials. Since germanium is currently used in the mainstream Si-based electronics, perspectives of using germanene for scaling down beyond the 5 nm node appear very promising. Other fascinating properties seem at hand, typically the robust quantum spin Hall effect for applications in spintronics and the engineering of Floquet Majorana fermions by light for quantum computing.

Few layer epitaxial germanene: a novel two-dimensional Dirac material

PubMed Central

Dávila, María Eugenia; Le Lay, Guy

2016-01-01

Monolayer germanene, a novel graphene-like germanium allotrope akin to silicene has been recently grown on metallic substrates. Lying directly on the metal surfaces the reconstructed atom-thin sheets are prone to lose the massless Dirac fermion character and unique associated physical properties of free standing germanene. Here, we show that few layer germanene, which we create by dry epitaxy on a gold template, possesses Dirac cones thanks to a reduced interaction. This finding established on synchrotron-radiation-based photoemission, scanning tunneling microscopy imaging and surface electron diffraction places few layer germanene among the rare two-dimensional Dirac materials. Since germanium is currently used in the mainstream Si-based electronics, perspectives of using germanene for scaling down beyond the 5 nm node appear very promising. Other fascinating properties seem at hand, typically the robust quantum spin Hall effect for applications in spintronics and the engineering of Floquet Majorana fermions by light for quantum computing. PMID:26860590

Surface conductance of graphene from non-contact resonant cavity.

PubMed

Obrzut, Jan; Emiroglu, Caglar; Kirillov, Oleg; Yang, Yanfei; Elmquist, Randolph E

2016-06-01

A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. The measurements are made in an air filled standard R100 rectangular waveguide configuration at one of the resonant frequency modes, typically at TE 103 mode of 7.4543 GHz. Surface conductance measurement involves monitoring a change in the quality factor of the cavity as the specimen is progressively inserted into the cavity in quantitative correlation with the specimen surface area. The specimen consists of a nano-carbon-layer supported on a low loss dielectric substrate. The thickness of the conducting nano-carbon layer does not need to be explicitly known, but it is assumed that the lateral dimension is uniform over the specimen area. The non-contact surface conductance measurements are illustrated for a typical graphene grown by chemical vapor deposition process, and for a high quality monolayer epitaxial graphene grown on silicon carbide wafers for which we performed non-gated quantum Hall resistance measurements. The sequence of quantized transverse Hall resistance at the Landau filling factors ν = ±6 and ±2, and the absence of the Hall plateau at ν = 4 indicate that the epitaxially grown graphene is a high quality mono-layer. The resonant microwave cavity measurement is sensitive to the surface and bulk conductivity, and since no additional processing is required, it preserves the integrity of the conductive graphene layer. It allows characterization with high speed, precision and efficiency, compared to transport measurements where sample contacts must be defined and applied in multiple processing steps.

Normal state transport studies of Bi2Sr2 Ca n-1CunOy thin films at different doping levels and manifestation of the pseudogap

NASA Astrophysics Data System (ADS)

Raffy, H.

2002-03-01

We have studied the evolution of the transport properties of Bi2Sr2 Ca n-1CunOy (n=1, 2) epitaxial thin films as function of doping p. For each phase, this was done on a single film by changing the oxygen content going from a maximally overdoped to a strongly underdoped non superconducting state(Z. Konstantinovic, Z.Z. Li and H. Raffy, Physica C 351, 163 (2001)). The behaviour of the resistance versus T and of the Hall effect will be described in the different regions of the phase diagram. In the underdoped region the pseudogap manifests itself on R(T) by a more rapid decrease or a reduction of the scattering rate below a temperature T*, representing an energy /temperature scale. It is observed that the resistivity curves can be scaled to a universal curve as a function of T/T*. Magnetoresistance measurements performed up to 20 Teslas do not show any significant change of this curve or of T*. The Hall constant RH(T) shows similar temperature dependence for both phases, with a broad maximum around 100K. The cotangent of the Hall angle can be described, above a temperature T0 (p), by a law of the form a+bT^m with 1.65

Exploring 4D quantum Hall physics with a 2D topological charge pump

NASA Astrophysics Data System (ADS)

Lohse, Michael; Schweizer, Christian; Price, Hannah M.; Zilberberg, Oded; Bloch, Immanuel

2018-01-01

The discovery of topological states of matter has greatly improved our understanding of phase transitions in physical systems. Instead of being described by local order parameters, topological phases are described by global topological invariants and are therefore robust against perturbations. A prominent example is the two-dimensional (2D) integer quantum Hall effect: it is characterized by the first Chern number, which manifests in the quantized Hall response that is induced by an external electric field. Generalizing the quantum Hall effect to four-dimensional (4D) systems leads to the appearance of an additional quantized Hall response, but one that is nonlinear and described by a 4D topological invariant—the second Chern number. Here we report the observation of a bulk response with intrinsic 4D topology and demonstrate its quantization by measuring the associated second Chern number. By implementing a 2D topological charge pump using ultracold bosonic atoms in an angled optical superlattice, we realize a dynamical version of the 4D integer quantum Hall effect. Using a small cloud of atoms as a local probe, we fully characterize the nonlinear response of the system via in situ imaging and site-resolved band mapping. Our findings pave the way to experimentally probing higher-dimensional quantum Hall systems, in which additional strongly correlated topological phases, exotic collective excitations and boundary phenomena such as isolated Weyl fermions are predicted.

Exploring 4D quantum Hall physics with a 2D topological charge pump.

PubMed

Lohse, Michael; Schweizer, Christian; Price, Hannah M; Zilberberg, Oded; Bloch, Immanuel

2018-01-03

The discovery of topological states of matter has greatly improved our understanding of phase transitions in physical systems. Instead of being described by local order parameters, topological phases are described by global topological invariants and are therefore robust against perturbations. A prominent example is the two-dimensional (2D) integer quantum Hall effect: it is characterized by the first Chern number, which manifests in the quantized Hall response that is induced by an external electric field. Generalizing the quantum Hall effect to four-dimensional (4D) systems leads to the appearance of an additional quantized Hall response, but one that is nonlinear and described by a 4D topological invariant-the second Chern number. Here we report the observation of a bulk response with intrinsic 4D topology and demonstrate its quantization by measuring the associated second Chern number. By implementing a 2D topological charge pump using ultracold bosonic atoms in an angled optical superlattice, we realize a dynamical version of the 4D integer quantum Hall effect. Using a small cloud of atoms as a local probe, we fully characterize the nonlinear response of the system via in situ imaging and site-resolved band mapping. Our findings pave the way to experimentally probing higher-dimensional quantum Hall systems, in which additional strongly correlated topological phases, exotic collective excitations and boundary phenomena such as isolated Weyl fermions are predicted.

Fractional quantum Hall effect in strained graphene: Stability of Laughlin states in disordered pseudomagnetic fields

NASA Astrophysics Data System (ADS)

Bagrov, Andrey A.; Principi, Alessandro; Katsnelson, Mikhail I.

2017-03-01

We address the question of the stability of the fractional quantum Hall effect in the presence of pseudomagnetic disorder generated by mechanical deformations of a graphene sheet. Neglecting the potential disorder and taking into account only strain-induced random pseudomagnetic fields, it is possible to write down a Laughlin-like trial ground-state wave function explicitly. Exploiting the Laughlin plasma analogy, we demonstrate that in the case of fluctuating pseudomagnetic fluxes of a relatively small amplitude, the fractional quantum Hall effect is always stable upon the deformations. By contrast, in the case of bubble-induced pseudomagnetic fields in graphene on a substrate (a small number of large fluxes) the disorder can be strong enough to cause a glass transition in the corresponding classical Coulomb plasma, resulting in the destruction of the fractional quantum Hall regime and in a quantum phase transition to a nonergodic state of the lowest Landau level.

Nonlocal Polarization Feedback in a Fractional Quantum Hall Ferromagnet.

PubMed

Hennel, Szymon; Braem, Beat A; Baer, Stephan; Tiemann, Lars; Sohi, Pirouz; Wehrli, Dominik; Hofmann, Andrea; Reichl, Christian; Wegscheider, Werner; Rössler, Clemens; Ihn, Thomas; Ensslin, Klaus; Rudner, Mark S; Rosenow, Bernd

2016-04-01

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a nonlocal effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a ν=2/3 fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

Quantum anomalous Hall Majorana platform

NASA Astrophysics Data System (ADS)

Zeng, Yongxin; Lei, Chao; Chaudhary, Gaurav; MacDonald, Allan H.

2018-02-01

We show that quasi-one-dimensional quantum wires can be written onto the surface of magnetic topological insulator (MTI) thin films by gate arrays. When the MTI is in a quantum anomalous Hall state, MTI/superconductor quantum wires have especially broad stability regions for both topological and nontopological states, facilitating creation and manipulation of Majorana particles on the MTI surface.

Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling

NASA Astrophysics Data System (ADS)

Tiira, Jonna; Radevici, Ivan; Haggren, Tuomas; Hakkarainen, Teemu; Kivisaari, Pyry; Lyytikäinen, Jari; Aho, Arto; Tukiainen, Antti; Guina, Mircea; Oksanen, Jani

2017-02-01

Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV- measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.

Theory of the disordered ν =5/2 quantum thermal Hall state: Emergent symmetry and phase diagram

NASA Astrophysics Data System (ADS)

Lian, Biao; Wang, Juven

2018-04-01

Fractional quantum Hall (FQH) system at Landau level filling fraction ν =5 /2 has long been suggested to be non-Abelian, either Pfaffian (Pf) or antiPfaffian (APf) states by numerical studies, both with quantized Hall conductance σx y=5 e2/2 h . Thermal Hall conductances of the Pf and APf states are quantized at κx y=7 /2 and κx y=3 /2 , respectively, in a proper unit. However, a recent experiment shows the thermal Hall conductance of ν =5 /2 FQH state is κx y=5 /2 . It has been speculated that the system contains random Pf and APf domains driven by disorders, and the neutral chiral Majorana modes on the domain walls may undergo a percolation transition to a κx y=5 /2 phase. In this paper, we do perturbative and nonperturbative analyses on the domain walls between Pf and APf. We show the domain wall theory possesses an emergent SO(4) symmetry at energy scales below a threshold Λ1, which is lowered to an emergent U (1 )×U (1) symmetry at energy scales between Λ1 and a higher value Λ2, and is finally lowered to the composite fermion parity symmetry Z2F above Λ2. Based on the emergent symmetries, we propose a phase diagram of the disordered ν =5 /2 FQH system and show that a κx y=5 /2 phase arises at disorder energy scales Λ >Λ1 . Furthermore, we show the gapped double-semion sector of ND compact domain walls contributes nonlocal topological degeneracy 2ND-1, causing a low-temperature peak in the heat capacity. We implement a nonperturbative method to bootstrap generic topological 1 +1 D domain walls (two-surface defects) applicable to any 2 +1 D non-Abelian topological order. We also identify potentially relevant spin topological quantum field theories (TQFTs) for various ν =5 /2 FQH states in terms of fermionic version of U (1) ±8 Chern-Simons theory ×Z8 -class TQFTs.

Moiré assisted fractional quantum Hall state spectroscopy

DOE PAGES

Wu, Fengcheng; MacDonald, A. H.

2016-12-14

Intra-Landau level excitations in the fractional quantum Hall regime are not accessible via optical absorption measurements. Here we point out that optical probes are enabled by the periodic potentials produced by a moire pattern. Our observation is motivated by the recent observations of fractional quantum Hall incompressible states in moire-patterned graphene on a hexagonal boron nitride substrate, and is theoretically based on f-sum rule considerations supplemented by a perturbative analysis of the influence of the moire potential on many-body states.

Group Γ (2) and the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Georgelin, Yvon; Wallet, Jean-Christophe

1997-02-01

We analyze the action of the inhomogeneous modular group Γ (2) on the three cusps of its principal fundamental domain in the Poincaré half plane. From this, we obtain an exhaustive classification of the fractional quantum Hall numbers. This classification, in which the integer and the fractional states appear on an equal level, is somehow similar to the one given by Jain. We also present some resulting remarks concerning direct phase transitions between the different quantum Hall states.

Charge 2e/3 Superconductivity and Topological Degeneracies without Localized Zero Modes in Bilayer Fractional Quantum Hall States.

PubMed

Barkeshli, Maissam

2016-08-26

It has been recently shown that non-Abelian defects with localized parafermion zero modes can arise in conventional Abelian fractional quantum Hall (FQH) states. Here we propose an alternate route to creating, manipulating, and measuring topologically protected degeneracies in bilayer FQH states coupled to superconductors, without the creation of localized parafermion zero modes. We focus mainly on electron-hole bilayers, with a ±1/3 Laughlin FQH state in each layer, with boundaries that are proximity coupled to a superconductor. We show that the superconductor induces charge 2e/3 quasiparticle-pair condensation at each boundary of the FQH state, and that this leads to (i) topologically protected degeneracies that can be measured through charge sensing experiments and (ii) a fractional charge 2e/3 ac Josephson effect. We demonstrate that an analog of non-Abelian braiding is possible, despite the absence of a localized zero mode. We discuss several practical advantages of this proposal over previous work, and also several generalizations.

Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes

DOEpatents

Tansu, Nelson; Zhao, Hongping; Zhang, Jing; Liu, Guangyu

2014-04-01

A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

Capacitive Energy Extraction by Few-Layer Graphene Electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lian, Cheng; Zhan, Cheng; Jiang, De-en

Capacitive double-layer expansion is a promising technology to harvest energy arising from the salinity difference between freshwater and seawater. Its optimal performance requires a careful selection of the operation potentials and electrode materials. While carbonaceous materials such as graphene and various forms of activated carbons are routinely used as the electrodes, there is little knowledge on how the quantum capacitance and the electric double-layer (EDL) capacitance, which are on the same order of magnitude, affect the capacitive performance. Toward understanding that from a theoretical perspective, here we study the capacitive energy extraction with graphene electrodes as a function of themore » number of graphene layers. The classical density functional theory is joined with the electronic density functional theory to obtain the EDL and the quantum capacitance, respectively. The theoretical results show that the quantum capacitance contribution plays a dominant role in extracting energy using the single-layer graphene, but its effect diminishes as the number of graphene layers increases. The overall extracted energy is dominated by the EDL contribution beyond about four graphene layers. Electrodes with more graphene layers are able to extract more energy at low charging potential. Here, because many porous carbons have nanopores with stacked graphene layers, our theoretical predictions are useful to identify optimal operation parameters for capacitive energy extraction with porous electrodes of different wall thickness.« less

Capacitive Energy Extraction by Few-Layer Graphene Electrodes

DOE PAGES

Lian, Cheng; Zhan, Cheng; Jiang, De-en; ...

2017-06-09

Capacitive double-layer expansion is a promising technology to harvest energy arising from the salinity difference between freshwater and seawater. Its optimal performance requires a careful selection of the operation potentials and electrode materials. While carbonaceous materials such as graphene and various forms of activated carbons are routinely used as the electrodes, there is little knowledge on how the quantum capacitance and the electric double-layer (EDL) capacitance, which are on the same order of magnitude, affect the capacitive performance. Toward understanding that from a theoretical perspective, here we study the capacitive energy extraction with graphene electrodes as a function of themore » number of graphene layers. The classical density functional theory is joined with the electronic density functional theory to obtain the EDL and the quantum capacitance, respectively. The theoretical results show that the quantum capacitance contribution plays a dominant role in extracting energy using the single-layer graphene, but its effect diminishes as the number of graphene layers increases. The overall extracted energy is dominated by the EDL contribution beyond about four graphene layers. Electrodes with more graphene layers are able to extract more energy at low charging potential. Here, because many porous carbons have nanopores with stacked graphene layers, our theoretical predictions are useful to identify optimal operation parameters for capacitive energy extraction with porous electrodes of different wall thickness.« less

Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

NASA Astrophysics Data System (ADS)

Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.

2017-02-01

Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ~500,000 cm2 V-1 s-1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

Framing anomaly in the effective theory of the fractional quantum Hall effect.

PubMed

Gromov, Andrey; Cho, Gil Young; You, Yizhi; Abanov, Alexander G; Fradkin, Eduardo

2015-01-09

We consider the geometric part of the effective action for the fractional quantum Hall effect (FQHE). It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions. In the lowest order in gradients, the linear response generating functional includes Chern-Simons, Wen-Zee, and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and contributes to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses for non-Abelian FQH states.

Enhanced thermoelectric response in the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Roura-Bas, Pablo; Arrachea, Liliana; Fradkin, Eduardo

2018-02-01

We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors ν =1 /m within Laughlin series. We calculate the figure of merit Z T for the maximum efficiency at a fixed temperature difference. We find a significant enhancement of this quantity in the fractional filling in relation to the integer-filling case, which is a direct consequence of the fractionalization of the electron in the fractional quantum Hall state. We present simple theoretical expressions for the Onsager coefficients at low temperatures, which explicitly show that Z T and the Seebeck coefficient increase with m .

Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating

NASA Astrophysics Data System (ADS)

Jin, Kui; Hu, Wei; Zhu, Beiyi; Kim, Dohun; Yuan, Jie; Sun, Yujie; Xiang, Tao; Fuhrer, Michael S.; Takeuchi, Ichiro; Greene, Richard. L.

2016-05-01

The occurrence of electrons and holes in n-type copper oxides has been achieved by chemical doping, pressure, and/or deoxygenation. However, the observed electronic properties are blurred by the concomitant effects such as change of lattice structure, disorder, etc. Here, we report on successful tuning the electronic band structure of n-type Pr2-xCexCuO4 (x = 0.15) ultrathin films, via the electric double layer transistor technique. Abnormal transport properties, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been revealed within an electrostatic field in range of -2 V to + 2 V, as well as varying the temperature and magnetic field. In the mixed state, the intrinsic anomalous Hall conductivity invokes the contribution of both electron and hole-bands as well as the energy dependent density of states near the Fermi level. The two-band model can also describe the normal state transport properties well, whereas the carrier concentrations of electrons and holes are always enhanced or depressed simultaneously in electric fields. This is in contrast to the scenario of Fermi surface reconstruction by antiferromagnetism, where an anti-correlation is commonly expected.

Effects of Hall current and electrical resistivity on the stability of gravitating anisotropic quantum plasma

NASA Astrophysics Data System (ADS)

Bhakta, S.; Prajapati, R. P.

2018-02-01

The effects of Hall current and finite electrical resistivity are studied on the stability of uniformly rotating and self-gravitating anisotropic quantum plasma. The generalized Ohm's law modified by Hall current and electrical resistivity is used along with the quantum magnetohydrodynamic fluid equations. The general dispersion relation is derived using normal mode analysis and discussed in the parallel and perpendicular propagations. In the parallel propagation, the Jeans instability criterion, expression of critical Jeans wavenumber, and Jeans length are found to be independent of non-ideal effects and uniform rotation but in perpendicular propagation only rotation affects the Jeans instability criterion. The unstable gravitating mode modified by Bohm potential and the stable Alfven mode modified by non-ideal effects are obtained separately. The criterion of firehose instability remains unaffected due to the presence of non-ideal effects. In the perpendicular propagation, finite electrical resistivity and quantum pressure anisotropy modify the dispersion relation, whereas no effect of Hall current was observed in the dispersion characteristics. The Hall current, finite electrical resistivity, rotation, and quantum corrections stabilize the growth rate. The stability of the dynamical system is analyzed using the Routh-Hurwitz criterion.

Parafermionic zero modes in gapless edge states

NASA Astrophysics Data System (ADS)

Clarke, David

It has been recently demonstrated1 that Majorana zero modes may occur in the gapless edge of Abelian quantum Hall states at a boundary between different edge phases bordering the same bulk. Such a zero mode is guaranteed to occur when an edge phase that supports fermionic excitations borders one that does not. Here we generalize to the non-charge conserving case such as may occur when a superconductor abuts the quantum Hall edge. We find that not only Majorana zero modes, but their ℤN generalizations (known as parafermionic zero modes) may occur at boundaries between edge phases in a fractional quantum Hall state. In particular, we find thst the ν = 1 / 3 fractional quantum Hall state supports topologically distinct edge phases separated by ℤ3 parafermionic zero modes when charge conservation is broken. Paradoxically, an arrangement of phases can be made such that only an odd number of localized parafermionic zero modes occur around the edge of a quantum Hall droplet. Such an arrangement is not allowed in a gapped system, but here the paradox is resolved due to an extended zero mode in the edge spectrum. LPS-MPO-CMTC, JQI-NSF-PFC, Microsoft Station Q.

Observation of the quantum Hall effect in δ-doped SrTiO3

PubMed Central

Matsubara, Y.; Takahashi, K. S.; Bahramy, M. S.; Kozuka, Y.; Maryenko, D.; Falson, J.; Tsukazaki, A.; Tokura, Y.; Kawasaki, M.

2016-01-01

The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO3 has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO3-two-dimensional electron system, fabricated by metal organic molecular-beam epitaxy. The quantized Hall plateaus are found to be solely stemming from the low Landau levels with even integer-filling factors, ν=4 and 6 without any contribution from odd ν's. For ν=4, the corresponding plateau disappears on decreasing the carrier density. Such peculiar behaviours are proposed to be due to the crossing between the Landau levels originating from the two subbands composed of d orbitals with different effective masses. Our findings pave a way to explore unprecedented quantum phenomena in d-electron systems. PMID:27228903

Anomalous Hall resistance in bilayer quantum Hall systems

NASA Astrophysics Data System (ADS)

Ezawa, Z. F.; Suzuki, S.; Tsitsishvili, G.

2007-07-01

We present a microscopic theory of the Hall current in the bilayer quantum Hall system on the basis of noncommutative geometry. By analyzing the Heisenberg equation of motion and the continuity equation of charge, we demonstrate the emergence of the phase current in a system where the interlayer phase coherence develops spontaneously. The phase current arranges itself to minimize the total energy of the system, as it induces certain anomalous behaviors in the Hall current in the counterflow geometry and also in the drag experiment. They explain the recent experimental data for anomalous Hall resistances due to Kellogg [Phys. Rev. Lett. 88, 126804 (2002); 93, 036801 (2004)] and Tutuc [Phys. Rev. Lett. 93, 036802 (2004)] at ν=1 .

Gate-Controlled Transmission of Quantum Hall Edge States in Bilayer Graphene.

PubMed

Li, Jing; Wen, Hua; Watanabe, Kenji; Taniguchi, Takashi; Zhu, Jun

2018-02-02

The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas carry key information of the bulk excitations. Here we demonstrate gate-controlled transmission of edge states in bilayer graphene through a potential barrier with tunable height. The backscattering rate is continuously varied from 0 to close to 1, with fractional quantized values corresponding to the sequential complete backscattering of individual modes. Our experiments demonstrate the feasibility to controllably manipulate edge states in bilayer graphene, thus opening the door to more complex experiments.

Gate-Controlled Transmission of Quantum Hall Edge States in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Li, Jing; Wen, Hua; Watanabe, Kenji; Taniguchi, Takashi; Zhu, Jun

2018-02-01

The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas carry key information of the bulk excitations. Here we demonstrate gate-controlled transmission of edge states in bilayer graphene through a potential barrier with tunable height. The backscattering rate is continuously varied from 0 to close to 1, with fractional quantized values corresponding to the sequential complete backscattering of individual modes. Our experiments demonstrate the feasibility to controllably manipulate edge states in bilayer graphene, thus opening the door to more complex experiments.

Prediction of weak topological insulators in layered semiconductors.

PubMed

Yan, Binghai; Müchler, Lukas; Felser, Claudia

2012-09-14

We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.

Edge physics of the quantum spin Hall insulator from a quantum dot excited by optical absorption.

PubMed

Vasseur, Romain; Moore, Joel E

2014-04-11

The gapless edge modes of the quantum spin Hall insulator form a helical liquid in which the direction of motion along the edge is determined by the spin orientation of the electrons. In order to probe the Luttinger liquid physics of these edge states and their interaction with a magnetic (Kondo) impurity, we consider a setup where the helical liquid is tunnel coupled to a semiconductor quantum dot that is excited by optical absorption, thereby inducing an effective quantum quench of the tunneling. At low energy, the absorption spectrum is dominated by a power-law singularity. The corresponding exponent is directly related to the interaction strength (Luttinger parameter) and can be computed exactly using boundary conformal field theory thanks to the unique nature of the quantum spin Hall edge.

Approaching quantum anomalous Hall effect in proximity-coupled YIG/graphene/h-BN sandwich structure

NASA Astrophysics Data System (ADS)

Tang, Chi; Cheng, Bin; Aldosary, Mohammed; Wang, Zhiyong; Jiang, Zilong; Watanabe, K.; Taniguchi, T.; Bockrath, Marc; Shi, Jing

2018-02-01

Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions can be acquired by coupling graphene to a magnetic insulator as revealed by the anomalous Hall effect. Here, we show enhanced magnetic proximity coupling by sandwiching graphene between a ferrimagnetic insulator yttrium iron garnet (YIG) and hexagonal-boron nitride (h-BN) which also serves as a top gate dielectric. By sweeping the top-gate voltage, we observe Fermi level-dependent anomalous Hall conductance. As the Dirac point is approached from both electron and hole sides, the anomalous Hall conductance reaches ¼ of the quantum anomalous Hall conductance 2e2/h. The exchange coupling strength is determined to be as high as 27 meV from the transition temperature of the induced magnetic phase. YIG/graphene/h-BN is an excellent heterostructure for demonstrating proximity-induced interactions in two-dimensional electron systems.

Remnant Geometric Hall Response in a Quantum Quench.

PubMed

Wilson, Justin H; Song, Justin C W; Refael, Gil

2016-12-02

Out-of-equilibrium systems can host phenomena that transcend the usual restrictions of equilibrium systems. Here, we unveil how out-of-equilibrium states, prepared via a quantum quench in a two-band system, can exhibit a nonzero Hall-type current-a remnant Hall response-even when the instantaneous Hamiltonian is time reversal symmetric (in contrast to equilibrium Hall currents). Interestingly, the remnant Hall response arises from the coherent dynamics of the wave function that retain a remnant of its quantum geometry postquench, and can be traced to processes beyond linear response. Quenches in two-band Dirac systems are natural venues for realizing remnant Hall currents, which exist when either mirror or time-reversal symmetry are broken (before or after the quench). Its long time persistence, sensitivity to symmetry breaking, and decoherence-type relaxation processes allow it to be used as a sensitive diagnostic of the complex out-of-equilibrium dynamics readily controlled and probed in cold-atomic optical lattice experiments.

Topological states of matter in two-dimensional fermionic systems

NASA Astrophysics Data System (ADS)

Beugeling, W.

2012-09-01

Topological states of matter in two-dimensional systems are characterised by the different properties of the edges and the bulk of the system: The edges conduct electrical current while the bulk is insulating. The first well-known example is the quantum Hall effect, which is induced by a perpendicular magnetic field that generates chiral edge channels along which the current propagates. Each channel contributes one quantum to the Hall conductivity. Due to the chirality, i.e., all currents propagate in the same direction, backscattering due to impurities is absent, and the Hall conductivity carried by the edge states is therefore protected from perturbations. Another example is the quantum spin Hall effect, induced by intrinsic spin-orbit coupling in absence of a magnetic field. There the edge states are helical, i.e., spin up and down currents propagate oppositely. In this case, the spin Hall conductivity is quantized, and it is protected by time-reversal symmetry from backscattering due to impurities. In Chapter 2 of the thesis, I discuss the combined effect of the magnetic field and intrinsic spin-orbit coupling. In addition, I discuss the influence of the Rashba spin-orbit coupling and of the Zeeman effect. In particular, I show that in absence of magnetic impurities, a weaker form of the quantum spin Hall state persists in the presence of a magnetic field. In addition, I show that the intrinsic spin-orbit coupling and the Zeeman effect act similarly in the low-flux limit. I furthermore analyse the phase transitions induced by intrinsic spin-orbit coupling at a fixed magnetic field, thereby explaining the change of the Hall and spin Hall conductivities at the transition. I also study the subtle interplay between the effects of the different terms in the Hamiltonian. In Chapter 3, I investigate an effective model for HgTe quantum wells doped with Mn ions. Without doping, HgTe quantum wells may exhibit the quantum spin Hall effect, depending on the thickness of the well. The doping with Mn ions modifies the behaviour of the system in two ways: First, the quantum spin Hall gap is reduced in size, and secondly, the system becomes paramagnetic. The latter effect causes a bending of the Landau levels, which is responsible for reentrant behaviour of the (spin) Hall conductivity. I investigate the different types of reentrant behaviour, and I estimate the experimental resolvability of this effect. In Chapter 4, I present a framework to describe the fractional quantum Hall effect in systems with multiple internal degrees of freedom, e.g., spin or pseudospin. This framework describes the so-called flux attachment in terms of a Chern-Simons theory in Hamiltonian form, proposed earlier for systems without internal degrees of freedom. Here, I show a generalization of these results, by replacing the number of attached flux quanta by a matrix. In particular, the plasma analogy proposed by Laughlin still applies, and Kohn’s theorem remains valid. I also show that the results remain valid when the flux-attachment matrix is singular.

Fabry-Perot Interferometry in the Integer and Fractional Quantum Hall Regimes

NASA Astrophysics Data System (ADS)

McClure, Douglas; Chang, Willy; Kou, Angela; Marcus, Charles; Pfeiffer, Loren; West, Ken

2011-03-01

We present measurements of electronic Fabry-Perot interferometers in the integer and fractional quantum Hall regimes. Two classes of resistance oscillations may be seen as a function of magnetic field and gate voltage, as we have previously reported. In small interferometers in the integer regime, oscillations of the type associated with Coulomb interaction are ubiquitous, while those consistent with single-particle Aharonov-Bohm interference are seen to co-exist in some configurations. The amplitude scaling of both types with temperature and device size is consistent with a theoretical model. Oscillations are further observed in the fractional quantum Hall regime. Here the dependence of the period on the filling factors in the constrictions and bulk of the interferometer can shed light on the effective charge of the interfering quasiparticles, but care is needed to distinguish these oscillations from those associated with integer quantum Hall states. We acknowledge funding from Microsoft Project Q and IBM.

Quantum Hall ferromagnets and transport properties of buckled Dirac materials

NASA Astrophysics Data System (ADS)

Luo, Wenchen; Chakraborty, Tapash

2015-10-01

We study the ground states and low-energy excitations of a generic Dirac material with spin-orbit coupling and a buckling structure in the presence of a magnetic field. The ground states can be classified into three types under different conditions: SU(2), easy-plane, and Ising quantum Hall ferromagnets. For the SU(2) and the easy-plane quantum Hall ferromagnets there are goldstone modes in the collective excitations, while all the modes are gapped in an Ising-type ground state. We compare the Ising quantum Hall ferromagnet with that of bilayer graphene and present the domain-wall solution at finite temperatures. We then specify the phase transitions and transport gaps in silicene in Landau levels 0 and 1. The phase diagram depends strongly on the magnetic field and the dielectric constant. We note that there exist triple points in the phase diagrams in Landau level N =1 that could be observed in experiments.

Graphene-based quantum Hall resistance standards grown by chemical vapor deposition on silicon carbide

NASA Astrophysics Data System (ADS)

Ribeiro-Palau, Rebeca; Lafont, Fabien; Kazazis, Dimitris; Michon, Adrien; Couturaud, Olivier; Consejo, Christophe; Jouault, Benoit; Poirier, Wilfrid; Schopfer, Felicien

2015-03-01

Replace GaAs-based quantum Hall resistance standards (GaAs-QHRS) by a more convenient one, based on graphene (Gr-QHRS), is an ongoing goal in metrology. The new Gr-QHRS are expected to work in less demanding experimental conditions than GaAs ones. It will open the way to a broad dissemination of quantum standards, potentially towards industrial end-users, and it will support the implementation of a new International System of Units based on fixed fundamental constants. Here, we present accurate quantum Hall resistance measurements in large graphene Hall bars, grown by the hybrid scalable technique of propane/hydrogen chemical vapor deposition (CVD) on silicon carbide (SiC). This new Gr-QHRS shows a relative accuracy of 1 ×10-9 of the Hall resistance under the lowest magnetic field ever achieved in graphene. These experimental conditions surpass those of the most wildely used GaAs-QHRS. These results confirm the promises of graphene for resistance metrology applications and emphasizes the quality of the graphene produced by the CVD on SiC for applications as demanding as the resistance metrology.

Mini array of quantum Hall devices based on epitaxial graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, S.; Lebedeva, N.; Hämäläinen, J.

2016-05-07

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed thatmore » the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.« less

Non-Abelian Bosonization and Fractional Quantum Hall Transitions

NASA Astrophysics Data System (ADS)

Hui, Aaron; Mulligan, Michael; Kim, Eun-Ah

A fully satisfying theoretical description for the quantum phase transition between fractional quantum Hall plateaus remains an outstanding problem. Experiments indicate scaling exponents that are not readily obtained in conventional theories. Using insights from duality, we describe a class of quantum critical effective theories that produce qualitatively realistic scaling exponents for the transition. We discuss the implications of our results for the physically-relevant interactions controlling this broad class of quantum critical behavior. Supported by National Science Foundation Graduate Research Fellowship Program under Grant No. DGE-1650441.

Interplay between snake and quantum edge states in a graphene Hall bar with a pn-junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milovanović, S. P., E-mail: slavisa.milovanovic@uantwerpen.be; Peeters, F. M., E-mail: francois.peeters@uantwerpen.be; Ramezani Masir, M., E-mail: mrmphys@gmail.com

2014-09-22

The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied, we predict oscillations in the Hall and the bend resistance as function of the magnetic field, which are a consequence of quantum interference between the occupied snake states.

Highly efficient organic light-emitting diodes with a quantum dot interfacial layer.

PubMed

Ryu, Seung Yoon; Hwang, Byoung Har; Park, Ki Wan; Hwang, Hyeon Seok; Sung, Jin Woo; Baik, Hong Koo; Lee, Chang Ho; Song, Seung Yong; Lee, Jun Yeob

2009-02-11

Advanced organic light-emitting diodes (OLEDs), based on a multiple structure, were achieved in combination with a quantum dot (QD) interfacial layer. The authors used core/shell CdSe/ZnS QDs passivated with trioctylphosphine oxide (TOPO) and TOPO-free QDs as interlayers. Multiple-structure OLEDs (MOLEDs) with TOPO-free QDs showed higher device efficiency because of a well-defined interfacial monolayer formation. Additionally, the three-unit MOLED showed high performance for device efficiency with double-structured QD interfacial layers due to the enhanced charge balance and recombination probability.

Few-layer 1T‧ MoTe2 as gapless semimetal with thickness dependent carrier transport

NASA Astrophysics Data System (ADS)

Song, Peng; Hsu, Chuanghan; Zhao, Meng; Zhao, Xiaoxu; Chang, Tay-Rong; Teng, Jinghua; Lin, Hsin; Loh, Kian Ping

2018-07-01

Semimetal MoTe2 can be a type II Weyl semimetal in the bulk, but monolayer of this material is predicted to be quantum spin hall insulators. This dramatic change in electronic properties with number of layers is an excellent example of the dimensional effects of quantum transport. However, a detailed experimental study of the carrier transport and band structure of ultrathin semimetal MoTe2 is lacking so far. We performed magneto-transport measurements to study the conduction behavior and quantum phase coherence of 1T‧ MoTe2 as a function of its thickness. We show that due to a unique two-band transport mechanism (synergetic contribution from electron conduction and hole conduction), the conduction behavior of 1T‧ MoTe2 changes from metallic to p-type unipolar, and finally to ambipolar as the thickness decreases, suggesting that this effect can be used in devices by effectively controlling the thickness. Our transport studies, optical measurements and first-principles electronic structure calculations reveal that 1T‧ MoTe2 remains gapless down to a few (~2–3) layers. Despite being gapless, 1T‧ MoTe2 exhibits metal-insulator transition at 3-layer thickness, due to enhanced carrier localization effect.

Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

PubMed

Tanabe, Katsuaki; Guimard, Denis; Bordel, Damien; Iwamoto, Satoshi; Arakawa, Yasuhiko

2010-05-10

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2). (c) 2010 Optical Society of America.

Double-wells and double-layers in dusty Fermi-Dirac plasmas: Comparison with the semiclassical Thomas-Fermi counterpart

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akbari-Moghanjoughi, M.

Based on the quantum hydrodynamics (QHD) model, a new relationship between the electrostatic-potential and the electron-density in the ultradense plasma is derived. Propagation of arbitrary amplitude nonlinear ion waves is, then, investigated in a completely degenerate dense dusty electron-ion plasma, using this new energy relation for the relativistic electrons, in the ground of quantum hydrodynamics model and the results are compared to the case of semiclassical Thomas-Fermi dusty plasma. Based on the standard pseudopotential approach, it is remarked that the Fermi-Dirac plasma, in contrast to the Thomas-Fermi counterpart, accommodates a wide variety of nonlinear excitations such as positive/negative-potential ion solitarymore » and periodic waves, double-layers, and double-wells. It is also remarked that the relativistic degeneracy parameter which relates to the mass-density of plasma has significant effects on the allowed matching-speed range in Fermi-Dirac dusty plasmas.« less

Operationalizing Air-Sea Battle in the Pacific

DTIC Science & Technology

2015-02-01

Joumall 25 \\/ FEATURE Ballard, Harysch, Cole, & Hall Operationalizing Ait’-Sea Battle in the Pacific tribes and nomadic marauders such as the...communications in general, the former focuses on the digital data links between different platforms. The original CSBA operational con- cept touches on this...very capable fourth-generation fighters; and it has fielded layers of upgraded and double- digit surface-to-air missile systems and antiaircraft

Bias voltage dependence of the electron spin depolarization in quantum wires in the quantum Hall regime detected by the resistively detected NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chida, K.; Yamauchi, Y.; Arakawa, T.

2013-12-04

We performed the resistively-detected nuclear magnetic resonance (RDNMR) to study the electron spin polarization in the non-equilibrium quantum Hall regime. By measuring the Knight shift, we derive source-drain bias voltage dependence of the electron spin polarization in quantum wires. The electron spin polarization shows minimum value around the threshold voltage of the dynamic nuclear polarization.

Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

PubMed Central

Wu, Zefei; Xu, Shuigang; Lu, Huanhuan; Khamoshi, Armin; Liu, Gui-Bin; Han, Tianyi; Wu, Yingying; Lin, Jiangxiazi; Long, Gen; He, Yuheng; Cai, Yuan; Yao, Yugui; Zhang, Fan; Wang, Ning

2016-01-01

In few-layer transition metal dichalcogenides (TMDCs), the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by threefold rotational symmetry and time reversal symmetry. In even layers, the extra inversion symmetry requires all states to be Kramers degenerate; whereas in odd layers, the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. Here we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons in few-layer TMDCs. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices, which provide a crucial information for understanding the unique properties of multi-valley band structures of few-layer TMDCs. PMID:27651106

Disorder-induced half-integer quantized conductance plateau in quantum anomalous Hall insulator-superconductor structures

NASA Astrophysics Data System (ADS)

Huang, Yingyi; Setiawan, F.; Sau, Jay D.

2018-03-01

A weak superconducting proximity effect in the vicinity of the topological transition of a quantum anomalous Hall system has been proposed as a venue to realize a topological superconductor (TSC) with chiral Majorana edge modes (CMEMs). A recent experiment [Science 357, 294 (2017), 10.1126/science.aag2792] claimed to have observed such CMEMs in the form of a half-integer quantized conductance plateau in the two-terminal transport measurement of a quantum anomalous Hall-superconductor junction. Although the presence of a superconducting proximity effect generically splits the quantum Hall transition into two phase transitions with a gapped TSC in between, in this Rapid Communication we propose that a nearly flat conductance plateau, similar to that expected from CMEMs, can also arise from the percolation of quantum Hall edges well before the onset of the TSC or at temperatures much above the TSC gap. Our Rapid Communication, therefore, suggests that, in order to confirm the TSC, it is necessary to supplement the observation of the half-quantized conductance plateau with a hard superconducting gap (which is unlikely for a disordered system) from the conductance measurements or the heat transport measurement of the transport gap. Alternatively, the half-quantized thermal conductance would also serve as a smoking-gun signature of the TSC.

Minimal excitation states for heat transport in driven quantum Hall systems

NASA Astrophysics Data System (ADS)

Vannucci, Luca; Ronetti, Flavio; Rech, Jérôme; Ferraro, Dario; Jonckheere, Thibaut; Martin, Thierry; Sassetti, Maura

2017-06-01

We investigate minimal excitation states for heat transport into a fractional quantum Hall system driven out of equilibrium by means of time-periodic voltage pulses. A quantum point contact allows for tunneling of fractional quasiparticles between opposite edge states, thus acting as a beam splitter in the framework of the electron quantum optics. Excitations are then studied through heat and mixed noise generated by the random partitioning at the barrier. It is shown that levitons, the single-particle excitations of a filled Fermi sea recently observed in experiments, represent the cleanest states for heat transport since excess heat and mixed shot noise both vanish only when Lorentzian voltage pulses carrying integer electric charge are applied to the conductor. This happens in the integer quantum Hall regime and for Laughlin fractional states as well, with no influence of fractional physics on the conditions for clean energy pulses. In addition, we demonstrate the robustness of such excitations to the overlap of Lorentzian wave packets. Even though mixed and heat noise have nonlinear dependence on the voltage bias, and despite the noninteger power-law behavior arising from the fractional quantum Hall physics, an arbitrary superposition of levitons always generates minimal excitation states.

Nontrivial transition of transmission in a highly open quantum point contact in the quantum Hall regime

NASA Astrophysics Data System (ADS)

Hong, Changki; Park, Jinhong; Chung, Yunchul; Choi, Hyungkook; Umansky, Vladimir

2017-11-01

Transmission through a quantum point contact (QPC) in the quantum Hall regime usually exhibits multiple resonances as a function of gate voltage and high nonlinearity in bias. Such behavior is unpredictable and changes sample by sample. Here, we report the observation of a sharp transition of the transmission through an open QPC at finite bias, which was observed consistently for all the tested QPCs. It is found that the bias dependence of the transition can be fitted to the Fermi-Dirac distribution function through universal scaling. The fitted temperature matches quite nicely to the electron temperature measured via shot-noise thermometry. While the origin of the transition is unclear, we propose a phenomenological model based on our experimental results that may help to understand such a sharp transition. Similar transitions are observed in the fractional quantum Hall regime, and it is found that the temperature of the system can be measured by rescaling the quasiparticle energy with the effective charge (e*=e /3 ). We believe that the observed phenomena can be exploited as a tool for measuring the electron temperature of the system and for studying the quasiparticle charges of the fractional quantum Hall states.

Anomalous Hall effect in ZrTe 5

DOE PAGES

Liang, Tian; Lin, Jingjing; Gibson, Quinn; ...

2018-03-19

Research in topological matter has expanded to include the Dirac and Weyl semimetals which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated inmore » the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. Finally, this suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.« less

Anomalous Hall effect in ZrTe5

NASA Astrophysics Data System (ADS)

Liang, Tian; Lin, Jingjing; Gibson, Quinn; Kushwaha, Satya; Liu, Minhao; Wang, Wudi; Xiong, Hongyu; Sobota, Jonathan A.; Hashimoto, Makoto; Kirchmann, Patrick S.; Shen, Zhi-Xun; Cava, R. J.; Ong, N. P.

2018-05-01

Research in topological matter has expanded to include the Dirac and Weyl semimetals1-10, which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated in the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. This suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.

Anomalous Hall effect in ZrTe 5

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Tian; Lin, Jingjing; Gibson, Quinn

Research in topological matter has expanded to include the Dirac and Weyl semimetals which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated inmore » the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. Finally, this suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.« less

Topological approach to quantum Hall effects and its important applications: higher Landau levels, graphene and its bilayer

NASA Astrophysics Data System (ADS)

Jacak, Janusz; Łydżba, Patrycja; Jacak, Lucjan

2017-05-01

In this paper the topological approach to quantum Hall effects is carefully described. Commensurability conditions together with proposed generators of a system braid group are employed to establish the fractional quantum Hall effect hierarchies of conventional semiconductors, monolayer and bilayer graphene structures. Obtained filling factors are compared with experimental data and a very good agreement is achieved. Preliminary constructions of ground-state wave functions in the lowest Landau level are put forward. Furthermore, this work explains why pyramids of fillings from higher bands are not counterparts of the well-known composite-fermion hierarchy - it provides with the cause for an intriguing robustness of ν = 7/3 , 8/3 and 5/2 states (also in graphene). The argumentation why paired states can be developed in two-subband systems (wide quantum wells) only when the Fermi energy lies in the first Landau level is specified. Finally, the paper also clarifies how an additional surface in bilayer systems contributes to an observation of the fractional quantum Hall effect near half-filling, ν = 1/2 .

Quantum Hall effect in ac driven graphene: From the half-integer to the integer case

NASA Astrophysics Data System (ADS)

Ding, Kai-He; Lim, Lih-King; Su, Gang; Weng, Zheng-Yu

2018-01-01

We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at σxy=±(n +1 /2 ) 4 e2/h (n is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at σxy=±n (4 e2/h ) starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with σxy=0 can be realized at the band center, hence fully restoring a conventional integer QHE with particle-hole symmetry. Within a low-energy Hamiltonian for Dirac cones merging, we show a very good agreement with the tight-binding calculations for the Hall plateau transitions. We also obtain the band structure for driven graphene ribbons to provide a further understanding on the appearance of the new Hall plateaus, showing a trivial insulator behavior for the σxy=0 state. In the presence of disorder, we numerically study the disorder-induced destruction of the quantum Hall states in a finite driven sample and find that qualitative features known in the undriven disordered case are maintained.

Chiral Maxwell demon in a quantum Hall system with a localized impurity

NASA Astrophysics Data System (ADS)

Rosselló, Guillem; López, Rosa; Platero, Gloria

2017-08-01

We investigate the role of chirality on the performance of a Maxwell demon implemented in a quantum Hall bar with a localized impurity. Within a stochastic thermodynamics description, we investigate the ability of such a demon to drive a current against a bias. We show that the ability of the demon to perform is directly related to its ability to extract information from the system. The key features of the proposed Maxwell demon are the topological properties of the quantum Hall system. The asymmetry of the electronic interactions felt at the localized state when the magnetic field is reversed joined to the fact that we consider energy-dependent (and asymmetric) tunneling barriers that connect such state with the Hall edge modes allow the demon to properly work.

Admittance of multiterminal quantum Hall conductors at kilohertz frequencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernández, C.; Consejo, C.; Chaubet, C., E-mail: christophe.chaubet@univ-montp2.fr

2014-03-28

We present an experimental study of the low frequency admittance of quantum Hall conductors in the [100 Hz, 1 MHz] frequency range. We show that the frequency dependence of the admittance of the sample strongly depends on the topology of the contacts connections. Our experimental results are well explained within the Christen and Büttiker approach for finite frequency transport in quantum Hall edge channels taking into account the influence of the coaxial cables capacitance. In the Hall bar geometry, we demonstrate that there exists a configuration in which the cable capacitance does not influence the admittance measurement of the sample. In thismore » case, we measure the electrochemical capacitance of the sample and observe its dependence on the filling factor.« less

Phase transition and field effect topological quantum transistor made of monolayer MoS2

NASA Astrophysics Data System (ADS)

Simchi, H.; Simchi, M.; Fardmanesh, M.; Peeters, F. M.

2018-06-01

We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q 2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q 2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q 2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.

Local Thermometry of Neutral Modes on the Quantum Hall Edge

NASA Astrophysics Data System (ADS)

Hart, Sean; Venkatachalam, Vivek; Pfeiffer, Loren; West, Ken; Yacoby, Amir

2012-02-01

A system of electrons in two dimensions and strong magnetic fields can be tuned to create a gapped 2D system with one dimensional channels along the edge. Interactions among these edge modes can lead to independent transport of charge and heat, even in opposite directions. Measuring the chirality and transport properties of these charge and heat modes can reveal otherwise hidden structure in the edge. Here, we heat the outer edge of such a quantum Hall system using a quantum point contact. By placing quantum dots upstream and downstream along the edge of the heater, we can measure both the chemical potential and temperature of that edge to study charge and heat transport, respectively. We find that charge is transported exclusively downstream, but heat can be transported upstream when the edge has additional structure related to fractional quantum Hall physics.

Kinetic Electric Field Signatures Associated with Magnetic Turbulence and Their Impact on Space Plasma Environments

NASA Astrophysics Data System (ADS)

Goodrich, K. A.

Magnetic turbulence is a universal phenomenon that occurs in space plasma physics, the small-scale processes of which is not well understood. This thesis presents on observational analysis of kinetic electric field signatures associated with magnetic turbulence, in an attempt to examine its underlying microphysics. Such kinetic signatures include small-scale magnetic holes, double layers, and phase-space holes. The first and second parts of this thesis presents observations of small-scale magnetic holes, observed depressions in total magnetic field strength with spatial widths on the order of or less than the ion Larmor radius, in the near-Earth plasmasheet. Here I demonstrate electric field signatures associated small-scale magnetic holes are consistent with the presence of electron Hall currents, currents oriented perpendicularly to the magnetic field. Further investigation of these fields indicates that the Hall electron current is primarily responsible for the depletion of | B| associated with small-scale magnetic holes. I then present evidence that suggests these currents can descend to smaller spatial scales, indicating they participate in a turbulent cascade to smaller scales, a link that has not been observable suggested until now. The last part of this thesis investigates the presence of double layers and phase-space holes in a magnetically turbulent region of the terrestrial bow shock. In this part, I present evidence that these same signatures can be generated via field-aligned currents generated by strong magnetic fluctuations. I also show that double layers and phase-space holes, embedded within localized nonlinear ion acoustic waves, correlate with localized electron heating and possible ion deceleration, indicating they play a role in turbulent dissipation of kinetic to thermal energy. This thesis clearly demonstrates that energy dissipation in turbulent plasma is closely linked to the small-scale electric field environment.

Quantum hall ferromagnets

NASA Astrophysics Data System (ADS)

Kumar, Akshay

We study several quantum phases that are related to the quantum Hall effect. Our initial focus is on a pair of quantum Hall ferromagnets where the quantum Hall ordering occurs simultaneously with a spontaneous breaking of an internal symmetry associated with a semiconductor valley index. In our first example ---AlAs heterostructures--- we study domain wall structure, role of random-field disorder and dipole moment physics. Then in the second example ---Si(111)--- we show that symmetry breaking near several integer filling fractions involves a combination of selection by thermal fluctuations known as "order by disorder" and a selection by the energetics of Skyrme lattices induced by moving away from the commensurate fillings, a mechanism we term "order by doping". We also study ground state of such systems near filling factor one in the absence of valley Zeeman energy. We show that even though the lowest energy charged excitations are charge one skyrmions, the lowest energy skyrmion lattice has charge > 1 per unit cell. We then broaden our discussion to include lattice systems having multiple Chern number bands. We find analogs of quantum Hall ferromagnets in the menagerie of fractional Chern insulator phases. Unlike in the AlAs system, here the domain walls come naturally with gapped electronic excitations. We close with a result involving only topology: we show that ABC stacked multilayer graphene placed on boron nitride substrate has flat bands with non-zero local Berry curvature but zero Chern number. This allows access to an interaction dominated system with a non-trivial quantum distance metric but without the extra complication of a non-zero Chern number.

Anomalous Coulomb oscillation in crossed carbon nanotubes

NASA Astrophysics Data System (ADS)

Baek, Seung Jae; Lee, Dongsu; Park, Seung Joo; Park, Yung Woo; Svensson, Johannes; Jonson, Mats; Campbell, Eleanor E. B.

2008-03-01

Single-walled carbon nanotube (SWCNT) crossed junctions separated by an insulating layer were fabricated to investigate the double quantum dot modulated by a single gate (DQD-sG). Anomalous Coulomb oscillations were observed on the lower CNT at low temperature, where the behavior was interpreted by the concept of a double quantum dot (DQD) system http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id =APPLAB000089000023233107000001&idtype=cvips&gifs=yes [1]. To understand it more clearly, we have intentionally fabricated crossed CNTs without oxide layer in between. The observed anomalous Coulomb oscillations indicate that the contact resistance between the two tubes becomes a potential barrier splitting the initial single QD into the DQD, and the back-gate modulates the energy levels of the DQD.

Magnetotransport of High Mobility Holes in Monolayer and Bilayer WSe2

NASA Astrophysics Data System (ADS)

Tutuc, Emanuel

Transition metal dichalcogenides have attracted significant interest because of their two-dimensional crystal structure, large band-gap, and strong spin-orbit interaction which leads to spin-valley locking. Recent advances in sample fabrication have allowed the experimental study of low temperature magneto-transport of high mobility holes in WSe2. We review here the main results of these studies which reveal clear quantum Hall states in mono- and bilayer WSe2. The data allows the extraction of an effective hole mass of m* = 0.45me (me is the bare electron mass) in both mono and bilayer WSe2. A systematic study of the carrier distribution in bilayer WSe2 determined from a Fourier analysis of the Shubnikov-de Haas oscillations indicates that the two layers are weakly coupled. The individual layer density dependence on gate bias shows negative compressibility, a signature of strong electron-electron interaction in these materials associated with the large effective mass. We discuss the interplay between cyclotron and Zeeman splitting using the dependence of the quantum Hall state sequence on carrier density, and the angle between the magnetic field and the WSe2 plane. Work done in collaboration with B. Fallahazad, H. C. P. Movva, K. Kim, S. K. Banerjee, T. Taniguchi, and K. Watanabe. This work supported by the Nanoelectronics Research Initiative SWAN center, Intel Corp., and National Science Foundation.

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

NASA Astrophysics Data System (ADS)

Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V.; Kumar, Roshan Krishna; Gorbachev, Roman V.; Kudrynskyi, Zakhar R.; Pezzini, Sergio; Kovalyuk, Zakhar D.; Zeitler, Uli; Novoselov, Konstantin S.; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V.; Fal'Ko, Vladimir I.; Geim, Andre K.; Cao, Yang

2017-03-01

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V-1 s-1 and 104 cm2 V-1 s-1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

Selective Equilibration of Spin-Polarized Quantum Hall Edge States in Graphene

NASA Astrophysics Data System (ADS)

Amet, F.; Williams, J. R.; Watanabe, K.; Taniguchi, T.; Goldhaber-Gordon, D.

2014-05-01

We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study scattering between edge states when the fourfold degeneracy of the Landau level is lifted by electron correlations, causing edge states to be spin and/or valley polarized. In this new regime, we observe a dramatic departure from the equilibration seen in more disordered devices: edge states with opposite spins propagate without mixing. As a result, the degree of equilibration inferred from transport can reveal the spin polarization of the ground state at each filling factor. In particular, the first Landau level is shown to be spin polarized at half filling, providing an independent confirmation of a conclusion of Young et al. [Nat. Phys. 8, 550 (2012)]. The conductance in the bipolar regime is strongly suppressed, indicating that copropagating edge states, even with the same spin, do not equilibrate along PN interfaces. We attribute this behavior to the formation of an insulating ν =0 stripe at the PN interface.

Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

DOE PAGES

Li, Jin; He, Chaoyu; Meng, Lijun; ...

2015-09-14

Here, we report that two-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing ab initio electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tunedmore » up to large values (0.2 eV for HgTe and 0.05 eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.« less

Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions.

PubMed

Xue, Fei; MacDonald, A H

2018-05-04

We study the phase diagram of a model quantum spin Hall system as a function of band inversion and band-coupling strength, demonstrating that when band hybridization is weak, an interaction-induced nematic insulator state emerges over a wide range of band inversion. This property is a consequence of the long-range Coulomb interaction, which favors interband phase coherence that is weakly dependent on momentum and therefore frustrated by the single-particle Hamiltonian at the band inversion point. For weak band hybridization, interactions convert the continuous gap closing topological phase transition at inversion into a pair of continuous phase transitions bounding a state with broken time-reversal and rotational symmetries. At intermediate band hybridization, the topological phase transition proceeds instead via a quantum anomalous Hall insulator state, whereas at strong hybridization interactions play no role. We comment on the implications of our findings for InAs/GaSb and HgTe/CdTe quantum spin Hall systems.

Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions

NASA Astrophysics Data System (ADS)

Xue, Fei; MacDonald, A. H.

2018-05-01

We study the phase diagram of a model quantum spin Hall system as a function of band inversion and band-coupling strength, demonstrating that when band hybridization is weak, an interaction-induced nematic insulator state emerges over a wide range of band inversion. This property is a consequence of the long-range Coulomb interaction, which favors interband phase coherence that is weakly dependent on momentum and therefore frustrated by the single-particle Hamiltonian at the band inversion point. For weak band hybridization, interactions convert the continuous gap closing topological phase transition at inversion into a pair of continuous phase transitions bounding a state with broken time-reversal and rotational symmetries. At intermediate band hybridization, the topological phase transition proceeds instead via a quantum anomalous Hall insulator state, whereas at strong hybridization interactions play no role. We comment on the implications of our findings for InAs/GaSb and HgTe/CdTe quantum spin Hall systems.

Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diniz, G. S., E-mail: ginetom@gmail.com; Guassi, M. R.; Qu, F.

2013-12-28

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of themore » exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.« less

Edge mixing dynamics in graphene p–n junctions in the quantum Hall regime

PubMed Central

Matsuo, Sadashige; Takeshita, Shunpei; Tanaka, Takahiro; Nakaharai, Shu; Tsukagoshi, Kazuhito; Moriyama, Takahiro; Ono, Teruo; Kobayashi, Kensuke

2015-01-01

Massless Dirac electron systems such as graphene exhibit a distinct half-integer quantum Hall effect, and in the bipolar transport regime co-propagating edge states along the p–n junction are realized. Additionally, these edge states are uniformly mixed at the junction, which makes it a unique structure to partition electrons in these edge states. Although many experimental works have addressed this issue, the microscopic dynamics of electron partition in this peculiar structure remains unclear. Here we performed shot-noise measurements on the junction in the quantum Hall regime as well as at zero magnetic field. We found that, in sharp contrast with the zero-field case, the shot noise in the quantum Hall regime is finite in the bipolar regime, but is strongly suppressed in the unipolar regime. Our observation is consistent with the theoretical prediction and gives microscopic evidence that the edge states are uniquely mixed along the p–n junction. PMID:26337445

Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, F.; Gao, K. H., E-mail: khgao@tju.edu.cn; Li, Z. Q.

2015-04-21

We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Ω/◻ at 2 K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility μ{sub q}more » owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer.« less

Fabrication of quantum dots in undoped Si/Si 0.8Ge 0.2 heterostructures using a single metal-gate layer

DOE PAGES

Lu, T. M.; Gamble, J. K.; Muller, R. P.; ...

2016-08-01

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si 0.8Ge 0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratiomore » used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

Response of two-band systems to a single-mode quantized field

NASA Astrophysics Data System (ADS)

Shi, Z. C.; Shen, H. Z.; Wang, W.; Yi, X. X.

2016-03-01

The response of topological insulators (TIs) to an external weakly classical field can be expressed in terms of Kubo formula, which predicts quantized Hall conductivity of the quantum Hall family. The response of TIs to a single-mode quantized field, however, remains unexplored. In this work, we take the quantum nature of the external field into account and define a Hall conductance to characterize the linear response of a two-band system to the quantized field. The theory is then applied to topological insulators. Comparisons with the traditional Hall conductance are presented and discussed.

Domain wall in a quantum anomalous Hall insulator as a magnetoelectric piston

NASA Astrophysics Data System (ADS)

Upadhyaya, Pramey; Tserkovnyak, Yaroslav

2016-07-01

We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall insulator with a magnetic configuration of a domain wall, when contacted by electrical reservoirs, acts as a magnetoelectric piston. A moving domain wall pumps charge current between electrical leads in a closed circuit, while applying an electrical bias induces reciprocal domain-wall motion. This pistonlike action is enabled by a finite reflection of charge carriers via chiral modes imprinted by the domain wall. Moreover, we find that, when compared with the recently discovered spin-orbit torque-induced domain-wall motion in heavy metals, the reflection coefficient plays the role of an effective spin-Hall angle governing the efficiency of the proposed electrical control of domain walls. Quantitatively, this effective spin-Hall angle is found to approach a universal value of 2, providing an efficient scheme to reconfigure the domain-wall chiral interconnects for possible memory and logic applications.

Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators

NASA Astrophysics Data System (ADS)

Chang, Cui-Zu; Li, Mingda

2016-03-01

The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity {σyx}=\\frac{{{e}2}}{h} without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this topical review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.

Analytical theory and possible detection of the ac quantum spin Hall effect

DOE PAGES

Deng, W. Y.; Ren, Y. J.; Lin, Z. X.; ...

2017-07-11

Here, we develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu, E-mail: iyun@yonsei.ac.kr

2014-11-07

A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV{sub TH}{sup QM}) and the gate capacitance (C{sub g}) degradation. First of all, ΔV{sub TH}{sup QM} induced by quantum mechanical (QM) effects is modeled. The C{sub g} degradation is then modeled by introducing the inversion layer centroid. With ΔV{sub TH}{sup QM} and the C{sub g} degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulationmore » results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.« less

Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tóvári, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Kriváchy, T.

2014-09-22

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

Optical manipulation of electron spin in quantum dot systems

NASA Astrophysics Data System (ADS)

Villas-Boas, Jose; Ulloa, Sergio; Govorov, Alexander

2006-03-01

Self-assembled quantum dots (QDs) are of particular interest for fundamental physics because of their similarity with atoms. Coupling two of such dots and addressing them with polarized laser light pulses is perhaps even more interesting. In this paper we use a multi-exciton density matrix formalism to model the spin dynamics of a system with single or double layers of QDs. Our model includes the anisotropic electron-hole exchange in the dots, the presence of wetting layer states, and interdot tunneling [1]. Our results show that it is possible to switch the spin polarization of a single self-assembled quantum dot under elliptically polarized light by increasing the laser intensity. In the nonlinear mechanism described here, intense elliptically polarized light creates an effective exchange channel between the exciton spin states through biexciton states, as we demonstrate by numerical and analytical methods. We further show that the effect persists in realistic ensembles of dots, and we propose alternative ways to detect it. We also extend our study to a double layer of quantum dots, where we find a competition between Rabi frequency and tunneling oscillations. [1] J. M. Villas-Boas, S. E. Ulloa, and A. O. Govorov, Phys. Rev. Lett. 94, 057404 (2005); Phys. Rev. B 69, 125342 (2004).

Modulated phases of graphene quantum Hall polariton fluids

PubMed Central

Pellegrino, Francesco M. D.; Giovannetti, Vittorio; MacDonald, Allan H.; Polini, Marco

2016-01-01

There is a growing experimental interest in coupling cavity photons to the cyclotron resonance excitations of electron liquids in high-mobility semiconductor quantum wells or graphene sheets. These media offer unique platforms to carry out fundamental studies of exciton-polariton condensation and cavity quantum electrodynamics in a regime, in which electron–electron interactions are expected to play a pivotal role. Here, focusing on graphene, we present a theoretical study of the impact of electron–electron interactions on a quantum Hall polariton fluid, that is a fluid of magneto-excitons resonantly coupled to cavity photons. We show that electron–electron interactions are responsible for an instability of graphene integer quantum Hall polariton fluids towards a modulated phase. We demonstrate that this phase can be detected by measuring the collective excitation spectra, which is often at a characteristic wave vector of the order of the inverse magnetic length. PMID:27841346

Hall effect in quantum critical charge-cluster glass

DOE PAGES

Bozovic, Ivan; Wu, Jie; Bollinger, Anthony T.; ...

2016-04-04

Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La 2-xSr xCuO 4 (LSCO) samples doped near the quantum critical point at x ≈ 0.06. Dramatic fluctuations in the Hall resistance appear below T CG ≈ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is variedmore » in extremely fine steps, Δx ≈ 0.00008. Furthermore, we observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.« less

Hall effect in quantum critical charge-cluster glass

PubMed Central

Wu, Jie; Bollinger, Anthony T.; Sun, Yujie; Božović, Ivan

2016-01-01

Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4 (LSCO) samples doped near the quantum critical point at x ∼ 0.06. Dramatic fluctuations in the Hall resistance appear below TCG ∼ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps, Δx ∼ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state. PMID:27044081

Hall effect in quantum critical charge-cluster glass.

PubMed

Wu, Jie; Bollinger, Anthony T; Sun, Yujie; Božović, Ivan

2016-04-19

Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4(LSCO) samples doped near the quantum critical point atx∼ 0.06. Dramatic fluctuations in the Hall resistance appear belowTCG∼ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps,Δx∼ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.

Photo-excited zero-resistance states in quasi-two-dimensional GaAs / Al xGa 1- xAs devices

NASA Astrophysics Data System (ADS)

Mani, R. G.

2007-12-01

We illustrate some experimental features of the recently discovered radiation-induced zero-resistance states in the high-mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the radiation-induced changes in the diagonal resistance and the Hall effect. We show that, quantum Hall effects, i.e., quantum Hall plateaus, disappear under photoexcitation, at the minima of the radiation-induced magnetoresistance oscillations.

Simulation of double stage hall thruster with double-peaked magnetic field

NASA Astrophysics Data System (ADS)

Ding, Yongjie; Li, Peng; Sun, Hezhi; Wei, Liqiu; Xu, Yu; Peng, Wuji; Su, Hongbo; Li, Hong; Yu, Daren

2017-07-01

This study adopts double permanent magnetic rings and four permanent magnetic rings to form two symmetrical magnetic peaks and two asymmetrical magnetic peaks in the channel of a Hall thruster, and uses a 2D-3V PIC-MCC model to analyze the influence of magnetic strength on the discharge characteristic and performance of Hall thrusters with an intermediate electrode and double-peaked magnetic field. As opposed to the two symmetrical magnetic peaks formed by double permanent magnetic rings, increasing the magnetic peak value deep within the channel can cause propellant ionization to occur; with the increase in the magnetic peak deep in the channel, the propellant utilization, thrust, and anode efficiency of the thruster are significantly improved. Double-peaked magnetic field can realize separate control of ionization and acceleration in a Hall thruster, and provide technical means for further improving thruster performance. Contribution to the Topical Issue "Physics of Ion Beam Sources", edited by Holger Kersten and Horst Neumann.

Anisotropy-driven transition from the Moore-Read state to quantum Hall stripes

NASA Astrophysics Data System (ADS)

Zhu, Zheng; Sodemann, Inti; Sheng, D. N.; Fu, Liang

2017-05-01

We investigate the nature of the quantum Hall liquid in a half-filled second Landau level (n =1 ) as a function of band mass anisotropy using numerical exact diagonalization and density matrix renormalization group methods. We find increasing the mass anisotropy induces a quantum phase transition from the Moore-Read state to a charge density wave state. By analyzing the energy spectrum, guiding center structure factors, and by adding weak pinning potentials, we show that this charge density wave is a unidirectional quantum Hall stripe, which has a periodicity of a few magnetic lengths and survives in the thermodynamic limit. We find smooth profiles for the guiding center occupation function that reveal the strong coupling nature of the array of chiral Luttinger liquids residing at the stripe edges.

Optical Radiation from Integer Quantum Hall States in Dirac Materials

NASA Astrophysics Data System (ADS)

Gullans, Michael; Taylor, Jacob; Ghaemi, Pouyan; Hafezi, Mohammad

Quantum Hall systems exhibit topologically protected edge states, which can have a macroscopic spatial extent. Such edge states provide a unique opportunity to study a quantum emitter whose size far exceeds the wavelength of emitted light. To better understand this limit, we theoretically characterize the optical radiation from integer quantum Hall states in two-dimensional Dirac materials. We show that the scattered light from the bulk reflects the spatial profile of the wavefunctions, enabling spatial imaging of the disorder landscape. We find that the radiation from the edge states are characterized by the presence of large multipole moments in the far-field. This multipole radiation arises from the transfer of angular momentum from the electrons into the scattered light, enabling the generation of coherent light with high orbital angular momentum.

Effect of capping layer on spin-orbit torques

NASA Astrophysics Data System (ADS)

Sun, Chi; Siu, Zhuo Bin; Tan, Seng Ghee; Yang, Hyunsoo; Jalil, Mansoor B. A.

2018-04-01

In order to enhance the magnitude of spin-orbit torque (SOT), considerable experimental works have been devoted to studying the thickness dependence of the different layers in multilayers consisting of heavy metal (HM), ferromagnet (FM), and capping layers. Here, we present a theoretical model based on the spin-drift-diffusion formalism to investigate the effect of the capping layer properties such as its thickness on the SOT observed in experiments. It is found that the spin Hall-induced SOT can be significantly enhanced by incorporating a capping layer with an opposite spin Hall angle to that of the HM layer. The spin Hall torque can be maximized by tuning the capping layer thickness. However, in the absence of the spin Hall effect (SHE) in the capping layer, the torque decreases monotonically with the capping layer thickness. Conversely, the spin Hall torque is found to decrease monotonically with the FM layer thickness, irrespective of the presence or absence of the SHE in the capping layer. All these trends are in correspondence with experimental observations. Finally, our model suggests that capping layers with a long spin diffusion length and high resistivity would also enhance the spin Hall torque.

Quasiparticle Excitations with Berry Curvature in Insulating Magnets and Weyl Semimetals

NASA Astrophysics Data System (ADS)

Hirschberger, Maximilian Anton

The concept of the geometric Berry phase of the quantum mechanical wave function has led to a better theoretical understanding of natural phenomena in all fields of fundamental physics research. In condensed matter physics, the impact of this theoretical discovery has been particularly profound: The quantum Hall effect, the anomalous Hall effect, the quantum spin Hall effect, magnetic skyrmions, topological insulators, and topological semimetals are but a few subfields that have witnessed rapid developments over the three decades since Michael Berry's landmark paper. In this thesis, I will present and discuss the results of three experiments where Berry's phase leads to qualitatively new transport behavior of electrons or magnetic spin excitations in solids. We introduce the theoretical framework that leads to the prediction of a thermal Hall effect of magnons in Cu(1,3-bdc), a simple two-dimensional layered ferromagnet on a Kagome net of spin S = 1/2 copper atoms. Combining our experimental results measured down to very low temperatures T = 0.3 K with published data from inelastic neutron scattering, we report a quantitative comparison with the theory. This confirms the expected net Berry curvature of the magnon band dispersion in this material. Secondly, we have studied the thermal Hall effect in the frustrated pyrochlore magnet Tb2Ti2O7, where the thermal Hall effect is large in the absence of long-range magnetic order. We establish the magnetic nature of the thermal Hall effect in Tb2Ti2O7, introducing this material as the first example of a paramagnet with non-trivial low-lying spin excitations. Comparing our results to other materials with zero thermal Hall effect such as the classical spin ice Dy2Ti 2O7 and the non-magnetic analogue Y2Ti2O 7, we carefully discuss the experimental limitations of our setup and rule out spurious background signals. The third and final chapter of this thesis is dedicated to electrical transport and thermopower experiments on the half-Heusler material GdPtBi. A careful doping study of the negative longitudinal magnetoresistance (LMR) establishes GdPtBi as a new material platform to study the physical properties of a simple Weyl metal with only two Weyl points (for magnetic field along the crystallographic 〈111〉 direction). The negative LMR is associated with the theory of the chiral anomaly in solids, and a direct consequence of the nonzero Berry curvature of the energy band structure of a Weyl semimetal. We compare our results to detailed calculations of the electronic band structure. Moving beyond the negative LMR, we report for the first time the effect of the chiral anomaly on the longitudinal thermopower in a Weyl semimetal.

Study of plasmonics in hybrids made from a quantum emitter and double metallic nanoshell dimer

NASA Astrophysics Data System (ADS)

Guo, Jiaohan; Black, Kevin; Hu, Jiawen; Singh, Mahi

2018-05-01

We developed a theory for the fluorescence (FL) for quantum emitter and double metallic nanoshell dimer hybrids using the density matrix method. The dimer is made from two identical double metallic nanoshells, which are made of a dielectric core, a gold metallic shell and a dielectric spacer layer. The quantum emitters are deposited on the surface of the spacer layers of the dimers due to the electrostatic absorptions. We consider that dimer hybrids are surrounded by biological cells. This can be achieved by injecting them into human or animal cells. The surface plasmon polaritons (SPP) are calculated for the dimer using Maxwell’s equations in the static wave approximation. The calculated SPP energy agrees with experimental data from Zhai et al (2017 Plasmonics 12 263) for the dimer made from a silica core, a gold metallic nanoshell and a silica spacer layer. We have also obtained an analytical expression of the FL using the density matrix method. We compare our theory with FL experimental data from Zhai et al (2017 Plasmonics 12 263) where the FL spectrum was measured by varying the thickness of the spacer layer from 9 nm to 40 nm. A good agreement between theory and experiment is found. We have shown that the enhancement of the FL increases as the thickness of the spacer layer decreases. We have also found that the enhancement of the FL increases as the distance between the double metallic nanoshells in the dimer decreases. These are interesting findings which are consistent with the experiments of Zhai et al (2017 Plasmonics 12 263) and can be used to control the FL enhancement in the FL-based biomedical imaging and cancer treatment. These interesting findings may also be useful in the fabrication of nanosensors and nanoswitches for applications in medicine.

Redistributing Chern numbers and quantum Hall transitions in multi-band lattices

NASA Astrophysics Data System (ADS)

Yu, H. L.; Zhai, Z. Y.; Jiang, C.

2018-07-01

We numerically study the integer quantum Hall effect (IQHE) on m-band lattices. With continuous modulating the next-nearest-neighbor hopping integral t' , it is found that the full band is divided into 2 m - 1 regions. There are m - 1 critical regions with pseudogaps induced by the merging between the two adjacent subbands, where both Chern numbers of the correlating Landau subbands and the corresponding Hall plateau are not well-defined. The other m regions with different well-defined Chern numbers are separated by the above m - 1 critical regions. Due to the redistributing Chern numbers of system induced by the merging of subbands, the Hall conductance exhibits a peculiar phase transition, which is characterized by the direct change of Hall plateau state.

Universal Topological Quantum Computation from a Superconductor-Abelian Quantum Hall Heterostructure

NASA Astrophysics Data System (ADS)

Mong, Roger S. K.; Clarke, David J.; Alicea, Jason; Lindner, Netanel H.; Fendley, Paul; Nayak, Chetan; Oreg, Yuval; Stern, Ady; Berg, Erez; Shtengel, Kirill; Fisher, Matthew P. A.

2014-01-01

Non-Abelian anyons promise to reveal spectacular features of quantum mechanics that could ultimately provide the foundation for a decoherence-free quantum computer. A key breakthrough in the pursuit of these exotic particles originated from Read and Green's observation that the Moore-Read quantum Hall state and a (relatively simple) two-dimensional p+ip superconductor both support so-called Ising non-Abelian anyons. Here, we establish a similar correspondence between the Z3 Read-Rezayi quantum Hall state and a novel two-dimensional superconductor in which charge-2e Cooper pairs are built from fractionalized quasiparticles. In particular, both phases harbor Fibonacci anyons that—unlike Ising anyons—allow for universal topological quantum computation solely through braiding. Using a variant of Teo and Kane's construction of non-Abelian phases from weakly coupled chains, we provide a blueprint for such a superconductor using Abelian quantum Hall states interlaced with an array of superconducting islands. Fibonacci anyons appear as neutral deconfined particles that lead to a twofold ground-state degeneracy on a torus. In contrast to a p+ip superconductor, vortices do not yield additional particle types, yet depending on nonuniversal energetics can serve as a trap for Fibonacci anyons. These results imply that one can, in principle, combine well-understood and widely available phases of matter to realize non-Abelian anyons with universal braid statistics. Numerous future directions are discussed, including speculations on alternative realizations with fewer experimental requirements.

Microwave spectroscopic observation of multiple phase transitions in the bilayer electron solid in wide quantum wells

NASA Astrophysics Data System (ADS)

Hatke, Anthony; Engel, Lloyd; Liu, Yang; Shayegan, Mansour; Pfeiffer, Loren; West, Ken; Baldwin, Kirk

2015-03-01

The termination of the low Landau filling factor (ν) fractional quantum Hall series for a single layer two dimensional system results in the formation of a pinned Wigner solid for ν < 1 / 5. In a wide quantum well the system can support a bilayer state in which interlayer and intralayer interactions become comparable, which is measured in traditional transport as an insulating state for ν < 1 / 2. We perform microwave spectroscopic studies of this bilayer state and observe that this insulator exhibits a resonance, a signature of a solid phase. Additionally, we find that as we increase the density of the well at fixed ν this bilayer solid exhibits multiple sharp reductions in the resonance amplitude vs ν. This behavior is characteristic of multiple phase transitions, which remain hidden from dc transport measurements.

Nobel Lecture: Topological quantum matter*

NASA Astrophysics Data System (ADS)

Haldane, F. Duncan M.

2017-10-01

Nobel Lecture, presented December 8, 2016, Aula Magna, Stockholm University. I will describe the history and background of three discoveries cited in this Nobel Prize: The "TKNN" topological formula for the integer quantum Hall effect found by David Thouless and collaborators, the Chern insulator or quantum anomalous Hall effect, and its role in the later discovery of time-reversal-invariant topological insulators, and the unexpected topological spin-liquid state of the spin-1 quantum antiferromagnetic chain, which provided an initial example of topological quantum matter. I will summarize how these early beginnings have led to the exciting, and currently extremely active, field of "topological matter."

Double Charge Ordering States and Spin Ordering State Observed in a RFe2O4 System

PubMed Central

Sun, Fei; Wang, Rui; Aku-Leh, C.; Yang, H. X.; He, Rui; Zhao, Jimin

2014-01-01

Charge, spin, and lattice degrees of orderings are of great interest in the layered quantum material RFe2O4 (R = Y, Er, Yb, Tm, and Lu) system. Recently many unique properties have been found using various experimental methods. However so far the nature of the two-dimensional (2D) charge ordering (CO) state is not clear and no observation of its fine structure in energy has been reported. Here we report unambiguous observation of double 2D CO states at relatively high temperature in a polycrystalline Er0.1Yb0.9Fe2O4 using Raman scattering. The energy gaps between the 3D and the double 2D states are 170 meV (41.2 THz) and 193 meV (46.6 THz), respectively. We also observed a spin ordering (SO) state at below 210 K with characteristic energy of 45 meV (10.7 THz). Our investigation experimentally identified new fine structures of quantum orders in the system, which also extends the capability of optical methods in investigating other layered quantum materials. PMID:25234133

Macroscopic Quantum Phase-Locking Model for the Quantum Hall = Effect

NASA Astrophysics Data System (ADS)

Wang, Te-Chun; Gou, Yih-Shun

1997-08-01

A macroscopic model of nonlinear dissipative phase-locking between a Josephson-like frequency and a macroscopic electron wave frequency is proposed to explain the Quantum Hall Effect. It is well known that a r.f-biased Josephson junction displays a collective phase-locking behavior which can be described by a non-autonomous second order equation or an equivalent 2+1-dimensional dynamical system. Making a direct analogy between the QHE and the Josephson system, this report proposes a computer-solving nonlinear dynamical model for the quantization of the Hall resistance. In this model, the Hall voltage is assumed to be proportional to a Josephson-like frequency and the Hall current is assumed related to a coherent electron wave frequency. The Hall resistance is shown to be quantized in units of the fine structure constant as the ratio of these two frequencies are locked into a rational winding number. To explain the sample-width dependence of the critical current, the 2DEG under large applied current is further assumed to develop a Josephson-like junction array in which all Josephson-like frequencies are synchronized. Other remarkable features of the QHE such as the resistance fluctuation and the even-denominator states are also discussed within this picture.

Topological phase transitions and quantum Hall effect in the graphene family

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaksmore » which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.« less

Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System

NASA Astrophysics Data System (ADS)

Gusev, G. M.; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.

2010-04-01

We study the transport properties of HgTe-based quantum wells containing simultaneously electrons and holes in a magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity σxy≈0 and in a minimum of diagonal conductivity σxx at ν=νp-νn=0, where νn and νp are the electron and hole Landau level filling factors. We suggest that the transport at the CNP point is determined by electron-hole “snake states” propagating along the ν=0 lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in a random magnetic field with a zero mean value.

Topological phase transitions and quantum Hall effect in the graphene family

NASA Astrophysics Data System (ADS)

Ledwith, P.; Kort-Kamp, W. J. M.; Dalvit, D. A. R.

2018-04-01

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaks which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. This complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.

Topological phase transitions and quantum Hall effect in the graphene family

DOE PAGES

Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

2018-04-15

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaksmore » which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.« less

Time-of-Flight Measurements as a Possible Method to Observe Anyonic Statistics

NASA Astrophysics Data System (ADS)

Umucalılar, R. O.; Macaluso, E.; Comparin, T.; Carusotto, I.

2018-06-01

We propose a standard time-of-flight experiment as a method for observing the anyonic statistics of quasiholes in a fractional quantum Hall state of ultracold atoms. The quasihole states can be stably prepared by pinning the quasiholes with localized potentials and a measurement of the mean square radius of the freely expanding cloud, which is related to the average total angular momentum of the initial state, offers direct signatures of the statistical phase. Our proposed method is validated by Monte Carlo calculations for ν =1 /2 and 1 /3 fractional quantum Hall liquids containing a realistic number of particles. Extensions to quantum Hall liquids of light and to non-Abelian anyons are briefly discussed.

Area-Preserving Diffeomorphisms, W∞ and { U}q [sl(2)] in Chern-Simons Theory and the Quantum Hall System

NASA Astrophysics Data System (ADS)

Kogan, Ian I.

We discuss a quantum { U}q [sl(2)] symmetry in the Landau problem, which naturally arises due to the relation between { U}q [sl(2)] and the group of magnetic translations. The latter is connected with W∞ and area-preserving (symplectic) diffeomorphisms which are the canonical transformations in the two-dimensional phase space. We shall discuss the hidden quantum symmetry in a 2 + 1 gauge theory with the Chern-Simons term and in a quantum Hall system, which are both connected with the Landau problem.

Shot-noise evidence of fractional quasiparticle creation in a local fractional quantum Hall state.

PubMed

Hashisaka, Masayuki; Ota, Tomoaki; Muraki, Koji; Fujisawa, Toshimasa

2015-02-06

We experimentally identify fractional quasiparticle creation in a tunneling process through a local fractional quantum Hall (FQH) state. The local FQH state is prepared in a low-density region near a quantum point contact in an integer quantum Hall (IQH) system. Shot-noise measurements reveal a clear transition from elementary-charge tunneling at low bias to fractional-charge tunneling at high bias. The fractional shot noise is proportional to T(1)(1-T(1)) over a wide range of T(1), where T(1) is the transmission probability of the IQH edge channel. This binomial distribution indicates that fractional quasiparticles emerge from the IQH state to be transmitted through the local FQH state. The study of this tunneling process enables us to elucidate the dynamics of Laughlin quasiparticles in FQH systems.

Robert B. Laughlin and the Fractional Quantum Hall Effect

Science.gov Websites

dropdown arrow Site Map A-Z Index Menu Synopsis Robert B. Laughlin and the Fractional Quantum Hall Effect Tsui discovered the effect. In 1983, Laughlin, then at the Lawrence Livermore National Laboratory , provided the theoretical explanation of the effect in terms of fractionally charged particles. It was a

ADHM and the 4d quantum Hall effect

NASA Astrophysics Data System (ADS)

Barns-Graham, Alec; Dorey, Nick; Lohitsiri, Nakarin; Tong, David; Turner, Carl

2018-04-01

Yang-Mills instantons are solitonic particles in d = 4 + 1 dimensional gauge theories. We construct and analyse the quantum Hall states that arise when these particles are restricted to the lowest Landau level. We describe the ground state wavefunctions for both Abelian and non-Abelian quantum Hall states. Although our model is purely bosonic, we show that the excitations of this 4d quantum Hall state are governed by the Nekrasov partition function of a certain five dimensional supersymmetric gauge theory with Chern-Simons term. The partition function can also be interpreted as a variant of the Hilbert series of the instanton moduli space, counting holomorphic sections rather than holomorphic functions. It is known that the Hilbert series of the instanton moduli space can be rewritten using mirror symmetry of 3d gauge theories in terms of Coulomb branch variables. We generalise this approach to include the effect of a five dimensional Chern-Simons term. We demonstrate that the resulting Coulomb branch formula coincides with the corresponding Higgs branch Molien integral which, in turn, reproduces the standard formula for the Nekrasov partition function.

Hyperspherical Slater determinant approach to few-body fractional quantum Hall states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Bin, E-mail: yanbin@purdue.edu; Wooten, Rachel E.; Daily, Kevin M.

2017-05-15

In a recent study (Daily et al., 2015), a hyperspherical approach has been developed to study few-body fractional quantum Hall states. This method has been successfully applied to the exploration of few boson and fermion problems in the quantum Hall region, as well as the study of inter-Landau level collective excitations (Rittenhouse et al., 2016; Wooten et al., 2016). However, the hyperspherical method as it is normally implemented requires a subsidiary (anti-)symmetrization process, which limits its computational effectiveness. The present work overcomes these difficulties and extends the power of this method by implementing a representation of the hyperspherical many-body basismore » space in terms of Slater determinants of single particle eigenfunctions. A clear connection between the hyperspherical representation and the conventional single particle picture is presented, along with a compact operator representation of the theoretical framework. - Highlights: • A hyperspherical method has been implemented to study the quantum Hall effect. • The hyperspherical many-body basis space is represented with Slater determinants. • Example numerical studies of the 4- and 8-electron systems are presented.« less

Paired quantum Hall states on noncommutative two-tori

NASA Astrophysics Data System (ADS)

Marotta, Vincenzo; Naddeo, Adele

2010-08-01

By exploiting the notion of Morita equivalence for field theories on noncommutative tori and choosing rational values of the noncommutativity parameter θ (in appropriate units), a one-to-one correspondence between an Abelian noncommutative field theory (NCFT) and a non-Abelian theory of twisted fields on ordinary space can be established. Starting from this general result, we focus on the conformal field theory (CFT) describing a quantum Hall fluid (QHF) at paired states fillings ν=mp/m+2 Cristofano et al. (2000) [1], recently obtained by means of m-reduction procedure, and show that it is the Morita equivalent of a NCFT. In this way we extend the construction proposed in Marotta and Naddeo (2008) [2] for the Jain series ν=>m2p/m+1. The case m=2 is explicitly discussed and the role of noncommutativity in the physics of quantum Hall bilayers is emphasized. Our results represent a step forward the construction of a new effective low energy description of certain condensed matter phenomena and help to clarify the relationship between noncommutativity and quantum Hall fluids.

Two-component quantum Hall effects in topological flat bands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Tian-Sheng; Zhu, Wei; Sheng, D. N.

2017-03-27

Here in this paper, we study quantum Hall states for two-component particles (hardcore bosons and fermions) loading in topological lattice models. By tuning the interplay of interspecies and intraspecies interactions, we demonstrate that two-component fractional quantum Hall states emerge at certain fractional filling factors ν = 1/2 for fermions (ν = 2/3 for bosons) in the lowest Chern band, classified by features from ground states including the unique Chern number matrix (inverse of the K matrix), the fractional charge and spin pumpings, and two parallel propagating edge modes. Moreover, we also apply our strategy to two-component fermions at integer fillingmore » factor ν = 2 , where a possible topological Neel antiferromagnetic phase is under intense debate very recently. For the typical π -flux checkerboard lattice, by tuning the onsite Hubbard repulsion, we establish a first-order phase transition directly from a two-component fermionic ν = 2 quantum Hall state at weak interaction to a topologically trivial antiferromagnetic insulator at strong interaction, and therefore exclude the possibility of an intermediate topological phase for our system.« less

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

DOE PAGES

Lu, T. M.; Tracy, L. A.; Laroche, D.; ...

2017-06-01

We typically achieve Quantum Hall ferromagnetic transitions by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We also show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 10 10 cm -2, this ratio grows greater than 1, resulting inmore » a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. For such gate-controlled spin-polarizations in the quantum Hall regime the door opens in order to realize Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.« less

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, T. M.; Tracy, L. A.; Laroche, D.

We typically achieve Quantum Hall ferromagnetic transitions by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We also show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 10 10 cm -2, this ratio grows greater than 1, resulting inmore » a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. For such gate-controlled spin-polarizations in the quantum Hall regime the door opens in order to realize Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.« less

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

NASA Astrophysics Data System (ADS)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi{sub 1–x}Sb{sub x} (0.07 ≤ x ≤ 0.2)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muntyanu, F. M., E-mail: muntean-teodor@yahoo.com; Gheorghitsa, E. I.; Gilewski, A.

2017-04-15

Galvanomagnetic effects in twisting bicrystals of Bi{sub 1–x}Sb{sub x} alloys (0.07 ≤ x ≤ 0.2) at low temperatures and in magnetic fields up to 40 T are studied. It is found that, at small crystallite misorientation angles, the semiconductor–semimetal transition is induced in the central layer (~60-nm-thick) and two adjacent layers (each ~20-nm-thick) of the interface at different values of ultraquantum magnetic field. Bicrystals with large misorientation angles, being located in strong magnetic fields, exhibit quantum oscillations of the magnetoresistance and the Hall effect, thus indicating that the density of states is higher and charge carriers are heavier in themore » adjacent layers of the interfaces than in the crystallites. Our results show also that twisting bicrystals contain regions with different densities of quantum electronic states, which are determined by the crystallite misorientation angle and magnetic-field strength.« less

Semiclassical theory of Hall viscosity

NASA Astrophysics Data System (ADS)

Biswas, Rudro

2014-03-01

Hall viscosity is an intriguing stress response in quantum Hall systems and is predicted to be observable via the conductivity in an inhomogeneous electric field. This has been studied extensively using a range of techniques, such as adiabatic transport, effective field theories, and Kubo formulae. All of these are, however, agnostic as to the distinction between strongly correlated quantum Hall states and non-interacting ones, where the effect arises due to the fundamental non-commuting nature of velocities and orbit positions in a magnetic field. In this talk I shall develop the semiclassical theory of quantized cyclotron orbits drifting in an applied inhomogeneous electric field and use it to provide a clear physical picture of how single particle properties in a magnetic field contribute to the Hall viscosity-dependence of the conductivity.

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Crystalline Symmetry-Protected Majorana Mode in Number-Conserving Dirac Semimetal Nanowires

NASA Astrophysics Data System (ADS)

Zhang, Rui-Xing; Liu, Chao-Xing

2018-04-01

One of the cornerstones for topological quantum computations is the Majorana zero mode, which has been intensively searched in fractional quantum Hall systems and topological superconductors. Several recent works suggest that such an exotic mode can also exist in a one-dimensional (1D) interacting double-wire setup even without long-range superconductivity. A notable instability in these proposals comes from interchannel single-particle tunneling that spoils the topological ground state degeneracy. Here we show that a 1D Dirac semimetal (DSM) nanowire is an ideal number-conserving platform to realize such Majorana physics. By inserting magnetic flux, a DSM nanowire is driven into a 1D crystalline-symmetry-protected semimetallic phase. Interaction enables the emergence of boundary Majorana zero modes, which is robust as a result of crystalline symmetry protection. We also explore several experimental consequences of Majorana signals.

Resonant optical tunneling-induced enhancement of the photonic spin Hall effect

NASA Astrophysics Data System (ADS)

Jiang, Xing; Wang, Qingkai; Guo, Jun; Zhang, Jin; Chen, Shuqing; Dai, Xiaoyu; Xiang, Yuanjiang

2018-04-01

Due to the quantum analogy with optics, the resonant optical tunneling effect (ROTE) has been proposed to investigate both the fundamental physics and the practical applications of optical switches and liquid refractive index sensors. In this paper, the ROTE is used to enhance the spin Hall effect (SHE) of transmitted light. It is demonstrated that sandwiching a layer of a high-refractive-index medium (boron nitride crystal) between two low-refractive-index layers (silica) can effectively enhance the photonic SHE due to the increased refractive index gradient and an enhanced evanescent field near the interface between silica and boron nitride. A maximum transverse shift of the horizontal polarization state in the ROTE structure of about 22.25 µm has been obtained, which is at least three orders of magnitude greater than the transverse shift in the frustrated total internal reflection structure. Moreover, the SHE can be manipulated by controlling the component materials and the thickness of the ROTE structure. These findings open the possibility for future applications of photonic SHE in precision metrology and spin-based photonics.

Anomalous Hall effect in calcium-doped lanthanum cobaltite and gadolinium

NASA Astrophysics Data System (ADS)

Baily, Scott Alan

The physical origin of the anomalous (proportional to magnetization) Hall effect is not very well understood. While many theories account for a Hall effect proportional to the magnetization of a material, these theories often predict effects significantly smaller than those found in ferromagnetic materials. An even more significant deficiency of the conventional theories is that they predict an anomalous Hall resistivity that is proportional to a power of the resistivity, and in the absence of a metal insulator transition cannot account for the anomalous Hall effect that peaks near TC. Recent models based on a geometric, or Berry, phase have had a great deal of success describing the anomalous Hall effect in double-exchange systems (e.g., lanthanum manganite and chromium dioxide). In gadolinium, as in double-exchange magnets, the exchange interaction is mediated by the conduction electrons and the anomalous Hall effect may therefore resemble that of CrO2 and other metallic double-exchange ferromagnets. Lanthanum cobaltite is similar to manganite in many ways, but a strong double-exchange interaction is not present. Calcium-doped lanthanum cobaltite films were found to have the largest anomalous Hall effect of any ferromagnetic metal. The primary purpose of this study is to gain insight into the origin of the anomalous Hall effect with the hope that these theories can be extended to account for the effect in other materials. The Hall resistivity, magnetoresistance, and magnetization of a Gadolinium single crystal were measured in fields up to 30 T. Cobaltite films were grown via laser ablation and characterized by a variety of techniques. Hall resistivity, magnetoresistance, magnetization, and magnetothermopower of L 1-xCaxCoO3 samples with 0.15 < x < 0.4 were measured in fields up to 7 T. The Gd results suggest that Berry's phase contributes partially to the Hall effect near TC. Berry's phase theories hold promise for explaining the large anomalous Hall effect in La1-xCaxCoO3 near T C, but the material presents many additional complexities, including a unique low temperature magnetoresistance. At low temperature, the Hall effect may be best explained by spin-polarized carriers scattering off of orbital disorder in spin-ordered clusters.

General response formula and application to topological insulator in quantum open system.

PubMed

Shen, H Z; Qin, M; Shao, X Q; Yi, X X

2015-11-01

It is well-known that the quantum linear response theory is based on the first-order perturbation theory for a system in thermal equilibrium. Hence, this theory breaks down when the system is in a steady state far from thermal equilibrium and the response up to higher order in perturbation is not negligible. In this paper, we develop a nonlinear response theory for such quantum open system. We first formulate this theory in terms of general susceptibility, after which we apply it to the derivation of Hall conductance for open system at finite temperature. As an example, the Hall conductance of the two-band model is derived. Then we calculate the Hall conductance for a two-dimensional ferromagnetic electron gas and a two-dimensional lattice model. The calculations show that the transition points of topological phase are robust against the environment. Our results provide a promising platform for the coherent manipulation of the nonlinear response in quantum open system, which has potential applications for quantum information processing and statistical physics.

Fractional quantum Hall effect at Landau level filling ν = 4/11

DOE PAGES

Pan, W.; Baldwin, K. W.; West, K. W.; ...

2015-01-09

In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance R xx and a quantized Hall resistance R xy, within 1% of the expected value of h/(4/11)e 2, were observed. The temperature dependence of the R xx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν =more » 3/8 and 5/13.« less

Control of excitons in multi-layer van der Waals heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calman, E. V., E-mail: ecalman@gmail.com; Dorow, C. J.; Fogler, M. M.

2016-03-07

We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS{sub 2} and hexagonal boron nitride. The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.

Studies of quantum dots in the quantum Hall regime

NASA Astrophysics Data System (ADS)

Goldmann, Eyal

We present two studies of quantum dots in the quantum Hall regime. In the first study, presented in Chapter 3, we investigate the edge reconstruction phenomenon believed to occur when the quantum dot filling fraction is n≲1 . Our approach involves the examination of large dots (≤40 electrons) using a partial diagonalization technique in which the occupancies of the deep interior orbitals are frozen. To interpret the results of this calculation, we evaluate the overlap between the diagonalized ground state and a set of trial wavefunctions which we call projected necklace (PN) states. A PN state is simply the angular momentum projection of a maximum density droplet surrounded by a ring of localized electrons. Our calculations reveal that PN states have up to 99% overlap with the diagonalized ground states, and are lower in energy than the states identified in Chamon and Wen's study of the edge reconstruction. In the second study, presented in Chapter 4, we investigate quantum dots in the fractional quantum Hall regime using a Hartree formulation of composite fermion theory. We find that under appropriate conditions, the chemical potential of the dots oscillates periodically with B due to the transfer of composite fermions between quasi-Landau bands. This effect is analogous the addition spectrum oscillations which occur in quantum dots in the integer quantum Hall regime. Period f0 oscillations are found in sharply confined dots with filling factors nu = 2/5 and nu = 2/3. Period 3 f0 oscillations are found in a parabolically confined nu = 2/5 dot. More generally, we argue that the oscillation period of dots with band pinning should vary continuously with B, whereas the period of dots without band pinning is f0 .

Gate-controlled tunneling of quantum Hall edge states in bilayer graphene

NASA Astrophysics Data System (ADS)

Zhu, Jun; Li, Jing; Wen, Hua

Controlled tunneling of integer and fractional quantum Hall edge states provides a powerful tool to probe the physics of 1D systems and exotic particle statistics. Experiments in GaAs 2DEGs employ either a quantum point contact or a line junction tunnel barrier. It is generally difficult to independently control the filling factors νL and νR on the two sides of the barrier. Here we show that in bilayer graphene both νL and νR as well as their Landau level structures can be independently controlled using a dual-split-gate structure. In addition, the height of the line-junction tunnel barrier implemented in our experiments is tunable via a 5th gate. By measuring the tunneling resistance across the junction RT we examine the equilibration of the edge states in a variety of νL/νR scenarios and under different barrier heights. Edge states from both sides are fully mixed in the case of a low barrier. As the barrier height increases, we observe plateaus in RT that correspond to sequential complete backscattering of edge states. Gate-controlled manipulation of edge states offers a new angle to the exploration of quantum Hall magnetism and fractional quantum Hall effect in bilayer graphene.

Quenching of the Quantum Hall Effect in Graphene with Scrolled Edges

NASA Astrophysics Data System (ADS)

Cresti, Alessandro; Fogler, Michael M.; Guinea, Francisco; Castro Neto, A. H.; Roche, Stephan

2012-04-01

Edge nanoscrolls are shown to strongly influence transport properties of suspended graphene in the quantum Hall regime. The relatively long arclength of the scrolls in combination with their compact transverse size results in formation of many nonchiral transport channels in the scrolls. They short circuit the bulk current paths and inhibit the observation of the quantized two-terminal resistance. Unlike competing theoretical proposals, this mechanism of disrupting the Hall quantization in suspended graphene is not caused by ill-chosen placement of the contacts, singular elastic strains, or a small sample size.

Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

DOE PAGES

Rosen, Ilan T.; Fox, Eli J.; Kou, Xufeng; ...

2017-12-01

The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Crmore » $$_y$$Bi$$_x$$Sb$$_{1-x-y}$$)$$_2$$Te$$_3$$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $$\

Error modelling of quantum Hall array resistance standards

NASA Astrophysics Data System (ADS)

Marzano, Martina; Oe, Takehiko; Ortolano, Massimo; Callegaro, Luca; Kaneko, Nobu-Hisa

2018-04-01

Quantum Hall array resistance standards (QHARSs) are integrated circuits composed of interconnected quantum Hall effect elements that allow the realization of virtually arbitrary resistance values. In recent years, techniques were presented to efficiently design QHARS networks. An open problem is that of the evaluation of the accuracy of a QHARS, which is affected by contact and wire resistances. In this work, we present a general and systematic procedure for the error modelling of QHARSs, which is based on modern circuit analysis techniques and Monte Carlo evaluation of the uncertainty. As a practical example, this method of analysis is applied to the characterization of a 1 MΩ QHARS developed by the National Metrology Institute of Japan. Software tools are provided to apply the procedure to other arrays.

Hidden-Symmetry-Protected Topological Semimetals on a Square Lattice

NASA Astrophysics Data System (ADS)

Hou, Jing-Min

2013-09-01

We study a two-dimensional fermionic square lattice, which supports the existence of a two-dimensional Weyl semimetal, quantum anomalous Hall effect, and 2π-flux topological semimetal in different parameter ranges. We show that the band degenerate points of the two-dimensional Weyl semimetal and 2π-flux topological semimetal are protected by two distinct novel hidden symmetries, which both correspond to antiunitary composite operations. When these hidden symmetries are broken, a gap opens between the conduction and valence bands, turning the system into a insulator. With appropriate parameters, a quantum anomalous Hall effect emerges. The degenerate point at the boundary between the quantum anomalous Hall insulator and trivial band insulator is also protected by the hidden symmetry.

Quantum Hall Valley Nematics: From Field Theories to Microscopic Models

NASA Astrophysics Data System (ADS)

Parameswaran, Siddharth

The interplay between quantum Hall ordering and spontaneously broken ``internal'' symmetries in two-dimensional electron systems with spin or pseudospin degrees of freedom gives rise to a variety of interesting phenomena, including novel phases, phase transitions, and topological excitations. I will discuss a theory of broken-symmetry quantum Hall states, applicable to a class of multivalley systems, where the symmetry at issue is a point-group element that combines a spatial rotation with a permutation of valley indices. I will explore its ramifications for the phase diagram of a variety of experimental systems, such as AlAs and Si quantum wells and the surface states of bismuth. I will also discuss unconventional transport phenomena in these phases in the presence of quenched randomness, and the possible mechanisms of selection between degenerate broken-symmetry phases in clean systems. I acknowledge support from NSF DMR-1455366.

Topological gapped edge states in fractional quantum Hall-superconductor heterostructures

NASA Astrophysics Data System (ADS)

Cook, Ashley; Repellin, Cécile; Regnault, Nicolas; Neupert, Titus

We propose and implement a numerical setup for studying edge states of fractional quantum Hall droplets with a superconducting instability. We focus on a time-reversal symmetric bilayer fractional quantum Hall system of Laughlin ν = 1 / 3 states. The fully gapped edges carry a topological parafermionic degree of freedom that can encode quantum information protected against local perturbations. We numerically simulate such a system using exact diagonalization by restricting the calculation to the Laughlin quasihole subspace. We study the quantization of the total charge on each edge and show that the ground states are permuted by spin flux insertion and the parafermionic Josephson effect, evidencing their topological nature and the Cooper pairing of fractionalized quasiparticles. The full affiliation for Author 3 is: Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Paris Diderot-Sorbonne Paris Cité, 24 rue Lhomond, 75231 Paris.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

NASA Astrophysics Data System (ADS)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Efficient single photon detection by quantum dot resonant tunneling diodes.

PubMed

Blakesley, J C; See, P; Shields, A J; Kardynał, B E; Atkinson, P; Farrer, I; Ritchie, D A

2005-02-18

We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.

21. INTERIOR, DOUBLE STAIRWAY LEADING TO MODEL HALL, DETAIL OF ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

21. INTERIOR, DOUBLE STAIRWAY LEADING TO MODEL HALL, DETAIL OF ONE FLIGHT (5 x 7 negative; 8 x 10 print) - Patent Office Building, Bounded by Seventh, Ninth, F & G Streets, Northwest, Washington, District of Columbia, DC

Quantum Nonlinear Hall Effect Induced by Berry Curvature Dipole in Time-Reversal Invariant Materials.

PubMed

Sodemann, Inti; Fu, Liang

2015-11-20

It is well known that a nonvanishing Hall conductivity requires broken time-reversal symmetry. However, in this work, we demonstrate that Hall-like currents can occur in second-order response to external electric fields in a wide class of time-reversal invariant and inversion breaking materials, at both zero and twice the driving frequency. This nonlinear Hall effect has a quantum origin arising from the dipole moment of the Berry curvature in momentum space, which generates a net anomalous velocity when the system is in a current-carrying state. The nonlinear Hall coefficient is a rank-two pseudotensor, whose form is determined by point group symmetry. We discus optimal conditions to observe this effect and propose candidate two- and three-dimensional materials, including topological crystalline insulators, transition metal dichalcogenides, and Weyl semimetals.

Double layers and double wells in arbitrary degenerate plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akbari-Moghanjoughi, M.

Using the generalized hydrodynamic model, the possibility of variety of large amplitude nonlinear excitations is examined in electron-ion plasma with arbitrary electron degeneracy considering also the ion temperature effect. A new energy-density relation is proposed for plasmas with arbitrary electron degeneracy which reduces to the classical Boltzmann and quantum Thomas-Fermi counterparts in the extreme limits. The pseudopotential method is employed to find the criteria for existence of nonlinear structures such as solitons, periodic nonlinear structures, and double-layers for different cases of adiabatic and isothermal ion fluids for a whole range of normalized electron chemical potential, η{sub 0}, ranging from dilutemore » classical to completely degenerate electron fluids. It is observed that there is a Mach-speed gap in which no large amplitude localized or periodic nonlinear excitations can propagate in the plasma under consideration. It is further revealed that the plasma under investigation supports propagation of double-wells and double-layers the chemical potential and Mach number ranges of which are studied in terms of other plasma parameters. The Mach number criteria for nonlinear waves are shown to significantly differ for cases of classical with η{sub 0} < 0 and quantum with η{sub 0} > 0 regimes. It is also shown that the localized structure propagation criteria possess significant dissimilarities for plasmas with adiabatic and isothermal ions. Current research may be generalized to study the nonlinear structures in plasma containing positrons, multiple ions with different charge states, and charged dust grains.« less

Disorder effects in the quantum Hall effect of graphene p-n junctions

NASA Astrophysics Data System (ADS)

Li, Jian; Shen, Shun-Qing

2008-11-01

The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.

Waves, particles, and interactions in reduced dimensions

NASA Astrophysics Data System (ADS)

Zhang, Yiming

This thesis presents a set of experiments that study the interplay between the wave-particle duality of electrons and the interaction effects in systems of reduced dimensions. Both dc transport and measurements of current noise have been employed in the studies; in particular, techniques for efficiently measuring current noise have been developed specifically for these experiments. The first four experiments study current noise auto- and cross correlations in various mesoscopic devices, including quantum point contacts, single and double quantum dots, and graphene devices. In quantum point contacts, shot noise at zero magnetic field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus where shot noise vanishes, agrees with a model of bias-dependent electron heating. In a three-lead single quantum dot and a capacitively coupled double quantum dot, sign reversal of noise cross correlations have been observed in the Coulomb blockade regime, and found to be tunable by gate voltages and source-drain bias. In the limit of weak output tunneling, cross correlations in the three-lead dot are found to be proportional to the two-lead noise in excess of the Poissonian value. These results can be reproduced with master equation calculations that include multi-level transport in the single dot, and inter-dot charging energy in the double dot. Shot noise measurements in single-layer graphene devices reveal a Fano factor independent of carrier type and density, device geometry, and the presence of a p-n junction. This result contrasts with theory for ballistic graphene sheets and junctions, suggesting that the transport is disorder dominated. The next two experiments study magnetoresistance oscillations in electronic Fabry-Perot interferometers in the integer quantum Hall regime. Two types of resistance oscillations, as a function of perpendicular magnetic field and gate voltages, in two interferometers of different sizes can be distinguished by three experimental signatures. The oscillations observed in the small (2.0 mum2) device are understood to arise from Coulomb blockade, and those observed in the big (18 mum2) device from Aharonov-Bohm interference. Nonlinear transport in the big device reveals a checkerboard-like pattern of conductance oscillations as a function of dc bias and magnetic field. Edge-state velocities extracted from the checkerboard data are compared to model calculations and found to be consistent with a crossover from skipping orbits at low fields to E⃗ x B⃗ drift at high fields. Suppression of visibility as a function of bias and magnetic field is accounted for by including energy- and field-dependent dephasing of edge electrons.

Electron Raman scattering in a strained ZnO/MgZnO double quantum well

NASA Astrophysics Data System (ADS)

Mojab-abpardeh, M.; Karimi, M. J.

2018-02-01

In this work, the electron Raman scattering in a strained ZnO / MgZnO double quantum wells is studied. The energy eigenvalues and the wave functions are obtained using the transfer matrix method. The effects of Mg composition, well width and barrier width on the internal electric field in well and barrier layers are investigated. Then, the influences of these parameters on the differential cross-section of electron Raman scattering are studied. Results indicate that the position, magnitude and the number of the peaks depend on the Mg composition, well width and barrier width.

Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Liang, Meng; Fu, Jiajia

2015-03-15

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL atmore » the current density of 100 A/cm{sup 2}.« less

Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

PubMed

Mani, Arjun; Benjamin, Colin

2016-04-13

On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin-orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible--the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case.

Impurity-generated non-Abelions

NASA Astrophysics Data System (ADS)

Simion, G.; Kazakov, A.; Rokhinson, L. P.; Wojtowicz, T.; Lyanda-Geller, Y. B.

2018-06-01

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an s -wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an s superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by characteristic disorder, gate voltage induced angular momentum splitting of impurity levels, and by a proximity superconducting gap. The phase diagram exhibits two ranges of gate voltage with conventional superconducting order separated by a gate voltage range with topological superconductivity. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana fermions. Ferromagnetic transitions in the fractional quantum Hall regime may lead to the formation and electrostatic control of higher order non-Abelian excitations.

13. OBSERVATION HALL ALONG WEST SIDE. DOUBLE DOORS LEAD TO ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

13. OBSERVATION HALL ALONG WEST SIDE. DOUBLE DOORS LEAD TO MAIN ROOM. Looking north. - Edwards Air Force Base, Air Force Rocket Propulsion Laboratory, Instrumentation & Control Building, Test Area 1-115, northwest end of Saturn Boulevard, Boron, Kern County, CA

Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

NASA Astrophysics Data System (ADS)

Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.; Schopfer, F.

2015-11-01

The quantum Hall effect provides a universal standard for electrical resistance that is theoretically based on only the Planck constant h and the electron charge e. Currently, this standard is implemented in GaAs/AlGaAs, but graphene's electronic properties have given hope for a more practical device. Here, we demonstrate that the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices. In particular, the Hall resistance can be accurately quantized to within 1 × 10-9 over a 10 T wide range of magnetic flux density, down to 3.5 T, at a temperature of up to 10 K or with a current of up to 0.5 mA. This experimental simplification highlights the great potential of graphene in the development of user-friendly and versatile quantum standards that are compatible with broader industrial uses beyond those in national metrology institutes. Furthermore, the measured agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs, with an ultimate uncertainty of 8.2 × 10-11, supports the universality of the quantum Hall effect. This also provides evidence of the relation of the quantized Hall resistance with h and e, which is crucial for the new Système International d'unités to be based on fixing such fundamental constants of nature.

Characterization of background carriers in InAs/GaSb quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junbin; Wu, Xiaoguang; Wang, Guowei

2016-03-07

The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to twomore » orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.« less

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

NASA Astrophysics Data System (ADS)

Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

2015-04-01

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10-9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

Tuning energy relaxation along quantum Hall channels.

PubMed

Altimiras, C; le Sueur, H; Gennser, U; Cavanna, A; Mailly, D; Pierre, F

2010-11-26

The chiral edge channels in the quantum Hall regime are considered ideal ballistic quantum channels, and have quantum information processing potentialities. Here, we demonstrate experimentally, at a filling factor of ν(L)=2, the efficient tuning of the energy relaxation that limits quantum coherence and permits the return toward equilibrium. Energy relaxation along an edge channel is controllably enhanced by increasing its transmission toward a floating Ohmic contact, in quantitative agreement with predictions. Moreover, by forming a closed inner edge channel loop, we freeze energy exchanges in the outer channel. This result also elucidates the inelastic mechanisms at work at ν(L)=2, informing us, in particular, that those within the outer edge channel are negligible.

Probing quantum Hall states with single-electron transistors at high magnetic fields

NASA Astrophysics Data System (ADS)

Gustafsson, Martin; Yankowitz, Matthew; Forsythe, Carlos; Zhu, Xiaoyang; Dean, Cory

The sequence of fractional quantum Hall states in graphene is not yet fully understood, largely due to disorder-induced limitations of conventional transport studies. Measurements of magnetotransport in other 2D crystals are further complicated by the difficulties in making ohmic contact to the materials. On the other hand, bulk electronic compressibility can provide clear signatures of the integer and fractional quantum Hall effects, does not require ohmic contact, and can be localized to regions of low disorder. The single-electron transistor (SET) is a suitable tool for such experiments due to its small size and high charge sensitivity, which allow electric fields penetrating the 2D electron system to be detected locally and with high fidelity. Here we report studies of exfoliated 2D van der Waals materials fully encapsulated in flakes of hexagonal boron nitride. SETs are fabricated lithographically on top of the encapsulation, yielding a structure which lends itself to experiments at high electric and magnetic fields. We demonstrate the method on monolayer graphene, where we observe fractional quantum Hall states at all filling factors ν = n / 3 up to n = 17 and extract their associated energy gaps for magnetic fields up to 31 tesla.

Quantum Hall ferroelectrics and nematics in multivalley systems

NASA Astrophysics Data System (ADS)

Sodemann, I.; Zhu, Zheng; Fu, Liang

We study broken symmetry states in multivalley quantum Hall systems whose low energy dispersions are anisotropic. Interactions tend to select states that are maximally valley polarized and have nematic character. Interestingly, in certain systems like the recently studied Bismuth (111) surfaces, the formation of these nematic states can be accompanied by appearance of an spontaneous dipole moment, leading to formation of a quantum Hall ferroelectric state. We study these states combining mean field calculations with state of the art DMRG numerical approach, and demonstrate that skyrmion-type charged excitations are extremely robust to the presence of nematic anisotropy. Supported by DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Award DE-SC0010526. IS. supported by Pappalardo Fellowship. We used Extreme Science and Engineering Discovery Environment (XSEDE) under NSF Grant ACI-1053575.

Quantum Hall effect in epitaxial graphene with permanent magnets.

PubMed

Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

2016-12-06

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

Quasiparticle Aggregation in the Fractional Quantum Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-10-10

Quasiparticles in the Fractional Quantum Hall Effect behave qualitatively like electrons confined to the lowest landau level, and can do everything electrons can do, including condense into second generation Fractional Quantum Hall ground states. I review in this paper the reasoning leading to variational wavefunctions for ground state and quasiparticles in the 1/3 effect. I then show how two-quasiparticle eigenstates are uniquely determined from symmetry, and how this leads in a natural way to variational wavefunctions for composite states which have the correct densities (2/5, 2/7, ...). I show in the process that the boson, anyon and fermion representations for the quasiparticles used by Haldane, Halperin, and me are all equivalent. I demonstrate a simple way to derive Halperin`s multiple-valued quasiparticle wavefunction from the correct single-valued electron wavefunction. (auth)

A direct connection between quantum Hall plateaus and exact pair states in a 2D electron gas

NASA Astrophysics Data System (ADS)

Hai, Wenhua; Li, Zejun; Xiao, Kewen

2011-12-01

It is previously found that the two-dimensional (2D) electron-pair in a homogeneous magnetic field has a set of exact solutions for a denumerably infinite set of magnetic fields. Here we demonstrate that as a function of magnetic field a band-like structure of energy associated with the exact pair states exists. A direct and simple connection between the pair states and the quantum Hall effect is revealed by the band-like structure of the hydrogen "pseudo-atom". From such a connection one can predict the sites and widths of the integral and fractional quantum Hall plateaus for an electron gas in a GaAs-Al x Ga1- x As heterojunction. The results are in good agreement with the existing experimental data.

Chern Numbers Hiding in Time of Flight Images

NASA Astrophysics Data System (ADS)

Satija, Indubala; Zhao, Erhai; Ghosh, Parag; Bray-Ali, Noah

2011-03-01

Since the experimental realization of synthetic magnetic fields in neural ultracold atoms, transport measurement such as quantized Hall conductivity remains an open challenge. Here we propose a novel and feasible scheme to measure the topological invariants, namely the chern numbers, in the time of flight images. We study both the commensurate and the incommensurate flux, with the later being the main focus here. The central concept underlying our proposal is the mapping between the chern numbers and the size of the dimerized states that emerge when the two-dimensional hopping is tuned to the highly anisotropic limit. In a uncoupled double quantum Hall system exhibiting time reversal invariance, only odd-sized dimer correlation functions are non-zero and hence encode quantized spin current. Finally, we illustrate that inspite of highly fragmented spectrum, a finite set of chern numbers are meaningful. Our results are supported by direct numerical computation of transverse conductivity. NBA acknowledges support from a National Research Council postdoctoral research associateship.

Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0–1.2 μm due to increased charge carrier's localization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Yablonsky, A. N.; Morozov, S. V.

2014-11-28

In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2 μm) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiativemore » recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.« less

Levitation of current carrying states in the lattice model for the integer quantum Hall effect.

PubMed

Koschny, T; Potempa, H; Schweitzer, L

2001-04-23

The disorder driven quantum Hall to insulator transition is investigated for a two-dimensional lattice model. The Hall conductivity and the localization length are calculated numerically near the transition. For uncorrelated and weakly correlated disorder potentials the current carrying states are annihilated by the negative Chern states originating from the band center. In the presence of correlated disorder potentials with correlation length larger than approximately half the lattice constant the floating up of the critical states in energy without merging is observed. This behavior is similar to the levitation scenario proposed for the continuum model.

Magnetotransport of Monolayer Graphene with Inert Gas Adsorption in the Quantum Hall Regime

NASA Astrophysics Data System (ADS)

Fukuda, A.; Terasawa, D.; Fujimoto, A.; Kanai, Y.; Matsumoto, K.

2018-03-01

The surface of graphene is easily accessible from outside, and thus it is a suitable material to study the effects of molecular adsorption on the electric transport properties. We investigate the magnetotransport of inert-gas-adsorbed monolayer graphene at a temperature of 4.4 K under a magnetic field ranging from 0 to 7 T. We introduce 4He or Ar gas at low temperature to graphene kept inside a sample cell. The magnetoresistance change ΔRxx and Hall resistance change ΔRxy from the pristine graphene are measured as a function of gate voltage and magnetic field for one layer of adsorbates. ΔRxx and ΔRxy show oscillating patterns related to the constant filling factor lines in a Landau-fan diagram. Magnitudes of these quantities are relatively higher around a charge neutral point and may be mass-sensitive. These conditions could be optimized for development of a highly sensitive gas sensor.

Quantum Entanglement as a Diagnostic of Phase Transitions in Disordered Fractional Quantum Hall Liquids.

PubMed

Liu, Zhao; Bhatt, R N

2016-11-11

We investigate the disorder-driven phase transition from a fractional quantum Hall state to an Anderson insulator using quantum entanglement methods. We find that the transition is signaled by a sharp increase in the sensitivity of a suitably averaged entanglement entropy with respect to disorder-the magnitude of its disorder derivative appears to diverge in the thermodynamic limit. We also study the level statistics of the entanglement spectrum as a function of disorder. However, unlike the dramatic phase-transition signal in the entanglement entropy derivative, we find a gradual reduction of level repulsion only deep in the Anderson insulating phase.

Detection of fractional solitons in quantum spin Hall systems

NASA Astrophysics Data System (ADS)

Fleckenstein, C.; Traverso Ziani, N.; Trauzettel, B.

2018-03-01

We propose two experimental setups that allow for the implementation and the detection of fractional solitons of the Goldstone-Wilczek type. The first setup is based on two magnetic barriers at the edge of a quantum spin Hall system for generating the fractional soliton. If then a quantum point contact is created with the other edge, the linear conductance shows evidence of the fractional soliton. The second setup consists of a single magnetic barrier covering both edges and implementing a long quantum point contact. In this case, the fractional soliton can unambiguously be detected as a dip in the conductance without the need to control the magnetization of the barrier.

Electrically tunable spin filtering for electron tunneling between spin-resolved quantum Hall edge states and a quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiyama, H., E-mail: kiyama@meso.t.u-tokyo.ac.jp; Fujita, T.; Teraoka, S.

2014-06-30

Spin filtering with electrically tunable efficiency is achieved for electron tunneling between a quantum dot and spin-resolved quantum Hall edge states by locally gating the two-dimensional electron gas (2DEG) leads near the tunnel junction to the dot. The local gating can change the potential gradient in the 2DEG and consequently the edge state separation. We use this technique to electrically control the ratio of the dot–edge state tunnel coupling between opposite spins and finally increase spin filtering efficiency up to 91%, the highest ever reported, by optimizing the local gating.

European Scientific Notes. Volume 38, Number 2.

DTIC Science & Technology

1984-02-01

Two-Dimensional Systems .................. J.T. Schriempf 80 The conference focused on the quantum Hall effect and the anomalous quantum Hall effect ...Study of the Effects of tional methods occur when the aim of Teaching Algorithmic and Heuristic instruction is to develop problem-solv- Solution Methods...Sharp and Dohme already has are therefore generally unsuitable as a fairly effective vaccine prepared from vaccines. The approach used by the the

Explanation of ν=−12 fractional quantum Hall state in bilayer graphene

PubMed Central

Jacak, L.

2016-01-01

The commensurability condition is applied to determine the hierarchy of fractional filling of Landau levels for fractional quantum Hall effect (FQHE) in monolayer and bilayer graphene. Good agreement with experimental data is achieved. The presence of even-denominator filling fractions in the hierarchy of the FQHE in bilayer graphene is explained, including the state at ν=−12. PMID:27118883

Quasiparticle interactions in fractional quantum Hall systems: Justification of different hierarchy schemes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wojs, Arkadiusz; Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw,; Quinn, John J.

2000-01-15

The pseudopotentials describing the interactions of quasiparticles in fractional quantum Hall (FQH) states are studied. Rules for the identification of incompressible quantum fluid ground states are found, based upon the form of the pseudopotentials. States belonging to the Jain sequence {nu}=n(1+2pn){sup -1}, where n and p are integers, appear to be the only incompressible states in the thermodynamic limit, although other FQH hierarchy states occur for finite size systems. This explains the success of the composite Fermion picture. (c) 2000 The American Physical Society.

Proceedings of the 8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology

NASA Astrophysics Data System (ADS)

Ishioka, Sachio; Fujikawa, Kazuo

2006-06-01

Preface -- Committees -- Opening address / H. Fukuyama -- Welcoming address / N. Osakabe -- Special lecture. Albert Einstein: opportunity and perception / C. N. Yang -- Quantum information and entanglement. Quantum optics with single atoms and photons / H. J. Kimble. Quantum information system experiments using a single photon source / Y. Yamamoto. Quantum communication and quantum computation with entangled photons / A. Zeilinger. High-fidelity quantum teleportation and a quantum teleportation network for continuous variables / N. Takei, A. Furusawa. Long lived entangled states / H. Häffner ... [et al.]. Quantum non-locality using tripartite entanglement with non-orthogonal states / J. V. Corbett, D. Home. Quantum entanglement and wedge product / H Heydari. Analysis of the generation of photon pairs in periodically poled lithium niobate / J. Söderholm ... [et al.]. Generation of entangled photons in a semiconductor and violation of Bell's inequality / G. Oohata, R. Shimizu, K. Edamatsu -- Quantum computing. Decoherence of a Josephson junction flux qubit / Y. Nakamura ... [et al.]. Spectroscopic analysis of a candidate two-qubit silicon quantum computer in the microwave regime / J. Gorman, D. G. Hasko, D. A. Williams. Berry phase detection in charge-coupled flux-qubits and the effect of decoherence / H. Nakano ... [et al.]. Locally observable conditions for the successful implementation of entangling multi-qubit quantum gates / H. F. Hofmann, R. Okamoto, S. Takeuchi. State control in flux qubit circuits: manipulating optical selection rules of microwave-assisted transitions in three-level artificial atoms / Y.-X. Liu ... [et al.]. The effect of local structure and non-uniformity on decoherence-free states of charge qubits / T. Tanamoto, S. Fujita. Entanglement-assisted estimation of quantum channels / A. Fujiwara. Superconducting quantum bit with ferromagnetic [symbol]-Junction / T. Yamashita, S. Takahashi, S. Maekawa. Generation of macroscopic Greenberger-Horne-Zeilinger states in Josephson systems / T. Fujii, M. Nishida, N. Hatakenaka -- Quantum-dot systems. Tunable tunnel and exchange couplings in double quantum dots / S. Tarucha, T. Hatano, M. Stopa. Coherent transport through quantum dots / S. Katsumoto ... [et al.]. Electrically pumped single-photon sources towards 1.3 [symbol]m / X. Xu ... [et al.]. Aharonov-Bohm-type effects in antidot arrays and their decoherence / M. Kato ... [et al.]. Nonequilibrium Kondo dot connected to ferromagnetic leads / Y. Utsumi ... [et al.]. Full counting-statistics in a single-electron transistor in the presence of strong quantum fluctuations / Y. Utsumi -- Anomalous Hall effect and Spin-Hall effect. Geometry and the anomalous Hall effect in ferromagnets / N. P. Ong, W.-L. Lee. Control of spin chirality, Berry phase, and anomalous Hall effect / Y. Tokura, Y. Taguchi. Quantum geometry and Hall effect in ferromagnets and semiconductors / N. Nagaosa. Spin-Hall effect in a semiconductor two-dimensional hole gas with strong spin-orbit coupling / J. Wunderlich ... [et al.]. Intrinsic spin Hall effect in semiconductors / S. Murakami -- Spin related phenomena. Theory of spin transfer phenomena in magnetic metals and semiconductors / A. S. Núñez, A. H. MacDonald. Spin filters of semiconductor nanostructures / T. Dietl, G. Grabecki, J. Wróbel. Experimental study on current-driven domain wall motion / T. Ono ... [et al.]. Magnetization reversal of ferromagnetic nano-dot by non local spin injection / Y. Otani, T. Kimura. Theory of current-driven domain wall dynamics / G. Tatara ... [et al.]. Magnetic impurity states and ferromagnetic interaction in diluted magnetic semiconductors / M. Ichimura ... [et al.]. Geometrical effect on spin current in magnetic nano-structures / M. Ichimura, S. Takahashi, S. Maekawa. Ferromagnetism in anatase TiO[symbol] codoped with Co and Nb / T. Hitosugi ... [et al.] -- Superconductivity in nano-systems. Nonlinear quantum effects in nanosuperconductors / C. Carballeira ... [et al.]. Coalescence and rearrangement of vortices in mesoscopic superconductors / A. Kanda ... [et al.]. Superconductivity in topologically nontrivial spaces / M. Hayashi ... [et al.]. DC-SQUID ratchet using atomic point contact / Y. Ootuka, H. Miyazaki, A. Kanda. Superconducting wire network under spatially modulated magnetic field / H. Sano ... [et al.]. Simple and stable control of mechanical break junction for the study of superconducting atomic point contact / H. Miyazaki ... [et al.]. Critical currents in quasiperiodic pinning arrays: one-dimensional chains and Penrose lattices / V. R. Misko, S. Savel'ev, F. Nori. Macroscopic quantum tunneling in high-Tc superconductor Josephson junctions / S. Kawabata -- Novel properties of carbon nanotubes. Carbon nanotubes and unique transport properties: importance of symmetry and channel number / T. Ando. Optical processes in single-walled carbon nanotubes threaded by a magnetic flux / J. Kono ... [et al.]. Non-equilibrium transport through a single-walled carbon nanotube with highly transparent coupling to reservoirs / P. Recher, N. Y. Kim, Y. Yamamoto -- Novel properties of nano-systems. Transport properties in low dimensional artificial lattice of gold nano-particles / S. Saito ... [et al.]. First principles study of dihydride-chain structures on H-terminated Si(100) surface / Y. Suwa ... [et al.]. Electrical property of Ag nanowires fabricated on hydrogen-terminated Si(100) surface / M. Fujimori, S. Heike, T. Hashizume. Effect of environment on ionization of excited atoms embedded in a solid-state cavity / M. Ando ... [et al.]. Development of universal virtual spectroscope for optoelectronics research: first principles software replacing dielectric constant measurements / T. Hamada ... [et al.]. Quantum Nernst effect / H Nakamura, N. Hatano, R. Shirasaki -- Precise measurements. Quantum phenomena visualized using electron waves / A. Tonomura. An optical lattice clock: ultrastable atomic clock with engineered perturbation / H. Katori ... [et al.]. Development of Mach-Zehnder interferometer and "coherent beam steering" technique for cold neutron / K. Taketani ... [et al.]. Surface potential measurement by atomic force microscopy using a quartz resonator / S. Heike, T. Hashizume -- Fundamental Problems in quantum physics. Berry's phases and topological properties in the Born-Oppenheimer approximation / K. Fujikawa. Self-trapping of Bose-Einstein condensates by oscillating interactions / H. Saito, M. Ueda. Spinor solitons in Bose-Einstein condensates - atomic spin transport / J. Ieda. Spin decoherence in a gravitational field / H. Terashima, M. Ueda. Berry's phase of atoms with different sign of the g-factor in a conical rotating magnetic field observed by a time-domain atom interferometer / A. Morinaga ... [et al.] -- List of participants.

Induced Superconductivity in the Quantum Spin Hall Edge

NASA Astrophysics Data System (ADS)

Ren, Hechen; Hart, Sean; Wagner, Timo; Leubner, Philipp; Muehlbauer, Mathias; Bruene, Christoph; Buhmann, Hartmut; Molenkamp, Laurens; Yacoby, Amir

2014-03-01

Two-dimensional topological insulators have a gapped bulk and helical edge states, making it a quantum spin Hall insulator. Combining such edge states with superconductivity can be an excellent platform for observing and manipulating localized Majorana fermions. In the context of condensed matter, these are emergent electronic states that obey non-Abelian statistics and hence support fault-tolerant quantum computing. To realize such theoretical constructions, an essential step is to show these edge channels are capable of carrying coherent supercurrent. In our experiment, we fabricate Josephson junctions with HgTe/HgCdTe quantum wells, a two-dimensional material that becomes a quantum spin Hall insulator when the quantum well is thicker than 6.3 nm and the bulk density is depleted. In this regime, we observe supercurrents whose densities are confined to the edges of the junctions, with edge widths ranging from 180 nm to 408 nm. To verify the topological nature of these edges, we measure identical junctions with HgTe/HgCdTe quantum wells thinner than 6.3 nm and observe only uniform supercurrent density across the junctions. This research is supported by Microsoft Corporation Project Q, the NSF DMR-1206016, the DOE SCGF Program, the German Research Foundation, and EU ERC-AG program.

Topological Hall Effect in Skyrmions: A Nonequilibrium Coherent Transport Approach

NASA Astrophysics Data System (ADS)

Yin, Gen; Zang, Jiadong; Lake, Roger

2014-03-01

Skyrmion is a topological spin texture recently observed in many materials with broken inversion symmetry. In experiments, one effective method to detect the skyrmion crystal phase is the topological Hall measurement. At adiabatic approximation, previous theoretical studies show that the Hall signal is provided by an emergent magnetic field, which explains the topological Hall effect in the classical level. Motivated by the potential device application of skyrmions as digital bits, it is important to understand the topological Hall effect in the mesoscopic level, where the electron coherence should be considered. In this talk, we will discuss the quantum aspects of the topological Hall effect on a tight binding setup solved by nonequilibrium Green's function (NEGF). The charge distribution, Hall potential distribution, thermal broadening effect and the Hall resistivity are investigated in detail. The relation between the Hall resistance and the DM interaction is investigated. Driven by the spin transferred torque (SST), Skyrmion dynamics is previously studied within the adiabatic approximation. At the quantum transport level, this talk will also discuss the non-adiabatic effect in the skyrmion motion with the presence of the topological Hall effect. This material is based upon work supported by the National Science Foundation under Grant Nos. NSF 1128304 and NSF 1124733. It was also supported in part by FAME, one of six centers of STARnet, an SRC program sponsored by MARCO and DARPA.

Transfer matrix approach for the Kerr and Faraday rotation in layered nanostructures.

PubMed

Széchenyi, Gábor; Vigh, Máté; Kormányos, Andor; Cserti, József

2016-09-21

To study the optical rotation of the polarization of light incident on multilayer systems consisting of atomically thin conductors and dielectric multilayers we present a general method based on transfer matrices. The transfer matrix of the atomically thin conducting layer is obtained using the Maxwell equations. We derive expressions for the Kerr (Faraday) rotation angle and for the ellipticity of the reflected (transmitted) light as a function of the incident angle and polarization of the light. The method is demonstrated by calculating the Kerr (Faraday) angle for bilayer graphene in the quantum anomalous Hall state placed on the top of dielectric multilayers. The optical conductivity of the bilayer graphene is calculated in the framework of a four-band model.

Photonic topological boundary pumping as a probe of 4D quantum Hall physics

NASA Astrophysics Data System (ADS)

Zilberberg, Oded; Huang, Sheng; Guglielmon, Jonathan; Wang, Mohan; Chen, Kevin P.; Kraus, Yaacov E.; Rechtsman, Mikael C.

2018-01-01

When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.

Photonic topological boundary pumping as a probe of 4D quantum Hall physics.

PubMed

Zilberberg, Oded; Huang, Sheng; Guglielmon, Jonathan; Wang, Mohan; Chen, Kevin P; Kraus, Yaacov E; Rechtsman, Mikael C

2018-01-03

When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.

Photoinduced topological phase transition and spin polarization in a two-dimensional topological insulator

NASA Astrophysics Data System (ADS)

Chen, M. N.; Su, W.; Deng, M. X.; Ruan, Jiawei; Luo, W.; Shao, D. X.; Sheng, L.; Xing, D. Y.

2016-11-01

A great deal of attention has been paid to the topological phases engineered by photonics over the past few years. Here, we propose a topological quantum phase transition to a quantum anomalous Hall (QAH) phase induced by off-resonant circularly polarized light in a two-dimensional system that is initially in a quantum spin Hall phase or a trivial insulator phase. This provides an alternative method to realize the QAH effect, other than magnetic doping. The circularly polarized light effectively creates a Zeeman exchange field and a renormalized Dirac mass, which are tunable by varying the intensity of the light and drive the quantum phase transition. Both the transverse and longitudinal Hall conductivities are studied, and the former is consistent with the topological phase transition when the Fermi level lies in the band gap. A highly controllable spin-polarized longitudinal electrical current can be generated when the Fermi level is in the conduction band, which may be useful for designing topological spintronics.

On-chip microwave circulators using quantum Hall plasmonics

NASA Astrophysics Data System (ADS)

Mahoney, Alice; Colless, James; Pauka, Sebastian; Hornibrook, John; Doherty, Andrew; Reilly, David; Peeters, Lucas; Fox, Eli; Goldhaber-Gordon, David; Kou, Xuefeng; Pan, Lei; Wang, Kang; Watson, John; Gardner, Geoffrey; Manfra, Michael

Circulators are directional circuit elements integral to technologies including radar systems, microwave communication transceivers and the readout of quantum information devices. Their non-reciprocity commonly arises from the interference of microwaves over the centimetre-scale of the signal wavelength in the presence of bulky magnetic media that breaks time-reversal symmetry. We present a completely passive on-chip microwave circulator with size 1/1000th the wavelength by exploiting the chiral, `slow-light' response of a GaAs/AlGaAs 2-dimensional electron gas in the quantum Hall regime. Further, by implementing this circulator design on a thin film of a magnetic topological insulator (Cr0.12(Bi0.26Sb0.62)2Te3), we show that similar non-reciprocity can be achieved at zero magnetic field. This additional mode of operation serves as a non-invasive probe of edge states in the quantum anomalous Hall effect, while also extending the possibility for integration with superconducting devices.

Quantum Hall states and conformal field theory on a singular surface

NASA Astrophysics Data System (ADS)

Can, T.; Wiegmann, P.

2017-12-01

In Can et al (2016 Phys. Rev. Lett. 117), quantum Hall states on singular surfaces were shown to possess an emergent conformal symmetry. In this paper, we develop this idea further and flesh out details on the emergent conformal symmetry in holomorphic adiabatic states, which we define in the paper. We highlight the connection between the universal features of geometric transport of quantum Hall states and holomorphic dimension of primary fields in conformal field theory. In parallel we compute the universal finite-size corrections to the free energy of a critical system on a hyperbolic sphere with conical and cusp singularities, thus extending the result of Cardy and Peschel for critical systems on a flat cone (Cardy and Peschel 1988 Nucl. Phys. B 300 377-92), and the known results for critical systems on polyhedra and flat branched Riemann surfaces.

Gap Reversal at Filling Factors 3 +1 /3 and 3 +1 /5 : Towards Novel Topological Order in the Fractional Quantum Hall Regime

NASA Astrophysics Data System (ADS)

Kleinbaum, Ethan; Kumar, Ashwani; Pfeiffer, L. N.; West, K. W.; Csáthy, G. A.

2015-02-01

In the region of the second Landau level several theories predict fractional quantum Hall states with novel topological order. We report the opening of an energy gap at the filling factor ν =3 +1 /3 , firmly establishing the ground state as a fractional quantum Hall state. This and other odd-denominator states unexpectedly break particle-hole symmetry. Specifically, we find that the relative magnitudes of the energy gaps of the ν =3 +1 /3 and 3 +1 /5 states from the upper spin branch are reversed when compared to the ν =2 +1 /3 and 2 +1 /5 counterpart states in the lower spin branch. Our findings raise the possibility that at least one of the former states is of an unusual topological order.

Termination of the spin-resolved integer quantum Hall effect

NASA Astrophysics Data System (ADS)

Wong, L. W.; Jiang, H. W.; Palm, E.; Schaff, W. J.

1997-03-01

We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlxGa1-xAs heterostructure. We have found that, for a given Nth Landau level, the difference in filling factors of a pair of spin-split resistivity peaks δνN=\\|νN↑-νN↓\\| changes rapidly from one to zero near a critical density nc. Scaling analysis shows that δνN collapses onto a single curve independent of N when plotted against the parameter (n-nc)/nc for five Landau levels. The effect of increasing the Zeeman energy is also examined by tilting the direction of magnetic field relative to the plane of the two-dimensional electron gas. Our experiment suggests the termination of the spin-resolved quantum Hall effect is a phase transition.

Interaction-induced interference in the integer quantum Hall effect

NASA Astrophysics Data System (ADS)

Sivan, I.; Bhattacharyya, R.; Choi, H. K.; Heiblum, M.; Feldman, D. E.; Mahalu, D.; Umansky, V.

2018-03-01

In recent interference experiments with an electronic Fabry-Pérot interferometer (FPI), implemented in the integer quantum Hall effect regime, a flux periodicity of h /2 e was observed at bulk fillings νB>2.5 . The halved periodicity was accompanied by an interfering charge e*=2 e , determined by shot-noise measurements. Here, we present measurements demonstrating that, counterintuitively, the coherence and the interference periodicity of the interfering chiral edge channel are solely determined by the coherence and the enclosed flux of the adjacent edge channel. Our results elucidate the important role of the latter and suggest that a neutral chiral edge mode plays a crucial role in the pairing phenomenon. Our findings reveal that the observed pairing of electrons is not a curious isolated phenomenon, but one of many manifestations of unexpected edge physics in the quantum Hall effect regime.

Conformal field theory construction for non-Abelian hierarchy wave functions

NASA Astrophysics Data System (ADS)

Tournois, Yoran; Hermanns, Maria

2017-12-01

The fractional quantum Hall effect is the paradigmatic example of topologically ordered phases. One of its most fascinating aspects is the large variety of different topological orders that may be realized, in particular non-Abelian ones. Here we analyze a class of non-Abelian fractional quantum Hall model states which are generalizations of the Abelian Haldane-Halperin hierarchy. We derive their topological properties and show that the quasiparticles obey non-Abelian fusion rules of type su (q)k . For a subset of these states we are able to derive the conformal field theory description that makes the topological properties—in particular braiding—of the state manifest. The model states we study provide explicit wave functions for a large variety of interesting topological orders, which may be relevant for certain fractional quantum Hall states observed in the first excited Landau level.

Hidden-Symmetry-Protected Topological Semimetals on a Square Lattice

NASA Astrophysics Data System (ADS)

Hou, Jing-Min

2014-03-01

We study a two-dimensional fermionic square lattice, which supports the existence of two-dimensional Weyl semimetal, quantum anomalous Hall effect, and 2 π -flux topological semimetal in different parameter ranges. We show that the band degenerate points of the two-dimensional Weyl semimetal and 2 π -flux topological semimetal are protected by two distinct novel hidden symmetries, which both corresponds to antiunitary composite operations. When these hidden symmetries are broken, a gap opens between the conduction and valence bands, turning the system into a insulator. With appropriate parameters, a quantum anomalous Hall effect emerges. The degenerate point at the boundary between the quantum anomalous Hall insulator and trivial band insulator is also protected by the hidden symmetry. [PRL 111, 130403(2013)] This work was supported by the National Natural Science Foundation of China under Grants No. 11004028 and No. 11274061.

Magnetoelectric effect in concentric quantum rings induced by shallow donor

NASA Astrophysics Data System (ADS)

Escorcia, R.; García, L. F.; Mikhailov, I. D.

2018-05-01

We study the alteration of the magnetic and electric properties induced by the off-axis donor in a double InAs/GaAs concentric quantum ring. To this end we consider a model of an axially symmetrical ring-like nanostructure with double rim, in which the thickness of the InAs thin layer is varied smoothly in the radial direction. The energies and of contour plots of the density of charge for low-lying levels we find by using the adiabatic approximation and the double Fourier-Bessel series expansion method and the Kane model. Our results reveal a possibility of the formation of a giant dipole momentum induced by the in-plane electric field, which in addition can be altered by of the external magnetic field applied along the symmetry axis.

Copenhagen's single system premise prevents a unified view of integer and fractional quantum hall effect

NASA Astrophysics Data System (ADS)

Post, Evert Jan

1999-05-01

This essay presents conclusive evidence of the impermissibility of Copenhagen's single system interpretation of the Schroedinger process. The latter needs to be viewed as a tool exclusively describing phase and orientation randomized ensembles and is not be used for isolated single systems. Asymptotic closeness of single system and ensemble behavior and the rare nature of true single system manifestations have prevented a definitive identification of this Copenhagen deficiency over the past three quarter century. Quantum uncertainty so becomes a basic trade mark of phase and orientation disordered ensembles. The ensuing void of usable single system tools opens a new inquiry for tools without statistical connotations. Three, in part already known, period integrals here identified as flux, charge and action counters emerge as diffeo-4 invariant tools fully compatible with the demands of the general theory of relativity. The discovery of the quantum Hall effect has been instrumental in forcing a distinction between ensemble disorder as in the normal Hall effect versus ensemble order in the plateau states. Since the order of the latter permits a view of the plateau states as a macro- or meso-scopic single system, the period integral description applies, yielding a straightforward unified description of integer and fractional quantum Hall effects.

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi 2O 2Se

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng

Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi 2O 2Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m 0. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi 2O 2Se was found to increase as thinning down to the monolayer duemore » to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm 2 V -1 s -1 was achieved in as-grown Bi 2O 2Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi 2O 2Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm 2 V -1 s -1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi 2O 2Se semiconductor a promising candidate for future high-speed and low-power electronic applications.« less

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi 2O 2Se

DOE PAGES

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; ...

2017-04-03

Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi 2O 2Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m 0. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi 2O 2Se was found to increase as thinning down to the monolayer duemore » to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm 2 V -1 s -1 was achieved in as-grown Bi 2O 2Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi 2O 2Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm 2 V -1 s -1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi 2O 2Se semiconductor a promising candidate for future high-speed and low-power electronic applications.« less

Simulation and optimization of deep violet InGaN double quantum well laser

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Ghazai, A. J.; Rahmani, R.; Mahmodi, H.; Hassan, Z.

2012-03-01

The performance characteristics of a deep violet InGaN double quantum well laser diode (LD) such as threshold current ( Ith), external differential quantum efficiency (DQE) and output power have been investigated using the Integrated System Engineering Technical Computer Aided Design (ISE-TCAD) software. As well as its operating parameters such as internal quantum efficiency ( ηi), internal loss ( αi) and transparency threshold current density ( J0) have been studied. Since, we are interested to investigate the mentioned characteristics and parameters independent of well and barrier thickness, therefore to reach a desired output wavelength, the indium mole fraction of wells and barriers has been varied consequently. The indium mole fractions of well and barrier layers have been considered 0.08 and 0.0, respectively. Some important parameters such as Al mole fraction of the electronic blocking layer (EBL) and cavity length which affect performance characteristics were also investigated. The optimum values of the Al mole fraction and cavity length in this study are 0.15 and 400 μm, respectively. The lowest threshold current, the highest DQE and output power which obtained at the emission wavelength of 391.5 nm are 43.199 mA, 44.99% and 10.334 mW, respectively.

Parity Anomaly and Spin Transmutation in Quantum Spin Hall Josephson Junctions.

PubMed

Peng, Yang; Vinkler-Aviv, Yuval; Brouwer, Piet W; Glazman, Leonid I; von Oppen, Felix

2016-12-23

We study the Josephson effect in a quantum spin Hall system coupled to a localized magnetic impurity. As a consequence of the fermion parity anomaly, the spin of the combined system of impurity and spin-Hall edge alternates between half-integer and integer values when the superconducting phase difference across the junction advances by 2π. This leads to characteristic differences in the splittings of the spin multiplets by exchange coupling and single-ion anisotropy at phase differences, for which time-reversal symmetry is preserved. We discuss the resulting 8π-periodic (or Z_{4}) fractional Josephson effect in the context of recent experiments.

Commensurability condition and hierarchy of fillings for FQHE in higher Landau levels in conventional 2DEG systems and in graphene—monolayer and bilayer

NASA Astrophysics Data System (ADS)

Jacak, Janusz; Jacak, Lucjan

2016-01-01

The structure of the filling rate hierarchy referred to as the fractional quantum Hall effect is studied in higher Landau levels using the commensurability condition. The hierarchy of fillings that are derived in this manner is consistent with the experimental observations of the first three Landau levels in conventional semiconductor Hall systems. The relative poverty of the fractional structure in higher Landau levels compared with the lowest Landau level is explained using commensurability topological arguments. The commensurability criterion for correlated states for higher Landau levels (with n≥slant 1) including the paired states at half fillings of the spin-subbands of these levels is formulated. The commensurability condition is applied to determine the hierarchy of the fractional fillings of Landau levels in the monolayer and bilayer graphene. Good agreement with current experimental observations of fractional quantum Hall effect in the graphene monolayer and bilayer is achieved. The presence of even denominator rates in the hierarchy for fractional quantum Hall effect in the bilayer graphene is also explained.

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

PubMed Central

Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

2015-01-01

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices. PMID:25891533

Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

NASA Astrophysics Data System (ADS)

Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

2017-10-01

We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x < 0.6 ) and the D022 phase ( x > 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties

NASA Astrophysics Data System (ADS)

Mihalyuk, Alexey N.; Bondarenko, Leonid V.; Tupchaya, Alexandra Y.; Gruznev, Dimitry V.; Chou, Jyh-Pin; Hsing, Cheng-Rong; Wei, Ching-Ming; Zotov, Andrey V.; Saranin, Alexander A.

2018-02-01

Metastable double-atomic layer of Tl on Si(111) has recently been found to display interesting electric properties, namely superconductivity below 0.96 K and magnetic-field-induced transition into an insulating phase intermediated by a quantum metal state. In the present work, using a set of experimental techniques, including low-energy electron diffraction, scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, in a combination with density-functional-theory calculations, we have characterized atomic and electronic properties of the Tl double layer on Si(111). The double Tl layer has been concluded to contain ∼ 2.4 monolayer of Tl. A top Tl layer has a '1 × 1' basic structure and displays 6 × 6 moiré pattern which originates from various residence sites of Tl atoms. Upon cooling below ∼ 140 K, the 6 × 6 moiré pattern changes to that having a 6√{ 3} × 6√{ 3} periodicity. However, the experimentally determined electron band dispersions show a 1 × 1 periodicity. The calculated band structure unfolded into the 1 × 1 surface Brillouin zone reproduces well the main features of the photoelectron spectra.

Different structural morphologies of the two surfaces in some Co-based amorphous ribbons

NASA Astrophysics Data System (ADS)

Bordin, G.; Buttino, G.

1992-12-01

In nearly zero magnetostriction Co-based Metglas amorphous ribbons, the anomalous Hall effect is used to investigate the behaviour of the surfaces (dull or shiny). The electronic transport properties of a double-layer film, where one of the two layers examined is ferromagnetic and amorphous, and the other is a non-magnetic film, are interpreted on the basis of the mean free path method of Bergmann and Fuchs-Sondheimer theory. The results obtained confirm the different structural morphology of the amorphous surfaces (dull or shiny) already observed by means of bending effects on the initial permeability that depends on the way of winding the ribbons in toroidal samples of the same amorphous materials.

Spontaneous Hall effect in a chiral p-wave superconductor

NASA Astrophysics Data System (ADS)

Furusaki, Akira; Matsumoto, Masashige; Sigrist, Manfred

2001-08-01

In a chiral superconductor with broken time-reversal symmetry a ``spontaneous Hall effect'' may be observed. We analyze this phenomenon by taking into account the surface properties of a chiral superconductor. We identify two main contributions to the spontaneous Hall effect. One contribution originates from the Bernoulli (or Lorentz) force due to spontaneous currents running along the surfaces of the superconductor. The other contribution has a topological origin and is related to the intrinsic angular momentum of Cooper pairs. The latter can be described in terms of a Chern-Simons-like term in the low-energy field theory of the superconductor and has some similarities with the quantum Hall effect. The spontaneous Hall effect in a chiral superconductor is, however, nonuniversal. Our analysis is based on three approaches to the problem: a self-consistent solution of the Bogoliubov-de Gennes equation, a generalized Ginzburg-Landau theory, and a hydrodynamic formulation. All three methods consistently lead to the same conclusion that the spontaneous Hall resistance of a two-dimensional superconducting Hall bar is of order h/(ekFλ)2, where kF is the Fermi wave vector and λ is the London penetration depth; the Hall resistance is substantially suppressed from a quantum unit of resistance. Experimental issues in measuring this effect are briefly discussed.

Hall viscosity of hierarchical quantum Hall states

NASA Astrophysics Data System (ADS)

Fremling, M.; Hansson, T. H.; Suorsa, J.

2014-03-01

Using methods based on conformal field theory, we construct model wave functions on a torus with arbitrary flat metric for all chiral states in the abelian quantum Hall hierarchy. These functions have no variational parameters, and they transform under the modular group in the same way as the multicomponent generalizations of the Laughlin wave functions. Assuming the absence of Berry phases upon adiabatic variations of the modular parameter τ, we calculate the quantum Hall viscosity and find it to be in agreement with the formula, given by Read, which relates the viscosity to the average orbital spin of the electrons. For the filling factor ν =2/5 Jain state, which is at the second level in the hierarchy, we compare our model wave function with the numerically obtained ground state of the Coulomb interaction Hamiltonian in the lowest Landau level, and find very good agreement in a large region of the complex τ plane. For the same example, we also numerically compute the Hall viscosity and find good agreement with the analytical result for both the model wave function and the numerically obtained Coulomb wave function. We argue that this supports the notion of a generalized plasma analogy that would ensure that wave functions obtained using the conformal field theory methods do not acquire Berry phases upon adiabatic evolution.

Signatures of a Nonthermal Metastable State in Copropagating Quantum Hall Edge Channels

NASA Astrophysics Data System (ADS)

Itoh, Kosuke; Nakazawa, Ryo; Ota, Tomoaki; Hashisaka, Masayuki; Muraki, Koji; Fujisawa, Toshimasa

2018-05-01

A Tomonaga-Luttinger (TL) liquid is known as an integrable system, in which a nonequilibrium many-body state survives without relaxing to a thermalized state. This intriguing characteristic is tested experimentally in copropagating quantum Hall edge channels at bulk filling factor ν =2 . The unidirectional transport allows us to investigate the time evolution by measuring the spatial evolution of the electronic states. The initial state is prepared with a biased quantum point contact, and its spatial evolution is measured with a quantum-dot energy spectrometer. We find strong evidence for a nonthermal metastable state in agreement with the TL theory before the system relaxes to thermal equilibrium with coupling to the environment.

Exotic quantum order in low-dimensional systems

NASA Astrophysics Data System (ADS)

Girvin, S. M.

1998-08-01

Strongly correlated quantum systems in low dimensions often exhibit novel quantum ordering. This ordering is sometimes hidden and can be revealed only by examining new "dual" types of correlations. Such ordering leads to novel collection modes and fractional quantum numbers. Examples will be presented from quantum spin chains and the quantum Hall effect.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour,more » analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.« less

Vector-mean-field theory of the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Rejaei, B.; Beenakker, C. W. J.

1992-12-01

A mean-field theory of the fractional quantum Hall effect is formulated based on the adiabatic principle of Greiter and Wilczek. The theory is tested on known bulk properties (excitation gap, fractional charge, and statistics), and then applied to a confined region in a two-dimensional electron gas (quantum dot). For a small number N of electrons in the dot, the exact ground-state energy has cusps at the same angular momentum values as the mean-field theory. For large N, Wen's algebraic decay of the probability for resonant tunneling through the dot is reproduced, albeit with a different exponent.

Interacting Electrons and Holes in Quasi-2D Quantum Dots in Strong Magnetic Fields

NASA Astrophysics Data System (ADS)

Hawrylak, P.; Sheng, W.; Cheng, S.-J.

2004-09-01

Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and of excitonic quantum Hall droplets at a filling factorν=2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons.

Electronic properties of novel topological quantum materials studied by angle-resolved photoemission spectroscopy (ARPES)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yun

The discovery of quantum Hall e ect has motivated the use of topology instead of broken symmetry to classify the states of matter. Quantum spin Hall e ect has been proposed to have a separation of spin currents as an analogue of the charge currents separation in quantum Hall e ect, leading us to the era of topological insulators. Three-dimensional analogue of the Dirac state in graphene has brought us the three-dimensional Dirac states. Materials with three-dimensional Dirac states could potentially be the parent compounds for Weyl semimetals and topological insulators when time-reversal or space inversion symmetry is broken. Inmore » addition to the single Dirac point linking the two dispersion cones in the Dirac/Weyl semimetals, Dirac points can form a line in the momentum space, resulting in a topological node line semimetal. These fascinating novel topological quantum materials could provide us platforms for studying the relativistic physics in condensed matter systems and potentially lead to design of new electronic devices that run faster and consume less power than traditional, silicon based transistors. In this thesis, we present the electronic properties of novel topological quantum materials studied by angle-resolved photoemission spectroscopy (ARPES).« less

Real-space imaging of fractional quantum Hall liquids

NASA Astrophysics Data System (ADS)

Hayakawa, Junichiro; Muraki, Koji; Yusa, Go

2013-01-01

Electrons in semiconductors usually behave like a gas--as independent particles. However, when confined to two dimensions under a perpendicular magnetic field at low temperatures, they condense into an incompressible quantum liquid. This phenomenon, known as the fractional quantum Hall (FQH) effect, is a quantum-mechanical manifestation of the macroscopic behaviour of correlated electrons that arises when the Landau-level filling factor is a rational fraction. However, the diverse microscopic interactions responsible for its emergence have been hidden by its universality and macroscopic nature. Here, we report real-space imaging of FQH liquids, achieved with polarization-sensitive scanning optical microscopy using trions (charged excitons) as a local probe for electron spin polarization. When the FQH ground state is spin-polarized, the triplet/singlet intensity map exhibits a spatial pattern that mirrors the intrinsic disorder potential, which is interpreted as a mapping of compressible and incompressible electron liquids. In contrast, when FQH ground states with different spin polarization coexist, domain structures with spontaneous quasi-long-range order emerge, which can be reproduced remarkably well from the disorder patterns using a two-dimensional random-field Ising model. Our results constitute the first reported real-space observation of quantum liquids in a class of broken symmetry state known as the quantum Hall ferromagnet.

Quasi-one-dimensional Hall physics in the Harper–Hofstadter–Mott model

NASA Astrophysics Data System (ADS)

Kozarski, Filip; Hügel, Dario; Pollet, Lode

2018-04-01

We study the ground-state phase diagram of the strongly interacting Harper–Hofstadter–Mott model at quarter flux on a quasi-one-dimensional lattice consisting of a single magnetic flux quantum in y-direction. In addition to superfluid phases with various density patterns, the ground-state phase diagram features quasi-one-dimensional analogs of fractional quantum Hall phases at fillings ν = 1/2 and 3/2, where the latter is only found thanks to the hopping anisotropy and the quasi-one-dimensional geometry. At integer fillings—where in the full two-dimensional system the ground-state is expected to be gapless—we observe gapped non-degenerate ground-states: at ν = 1 it shows an odd ‘fermionic’ Hall conductance, while the Hall response at ν = 2 consists of the transverse transport of a single particle–hole pair, resulting in a net zero Hall conductance. The results are obtained by exact diagonalization and in the reciprocal mean-field approximation.

Quantum Hall effect breakdown in two-dimensional hole gases

NASA Astrophysics Data System (ADS)

Eaves, L.; Stoddart, S. T.; Wirtz, R.; Neumann, A. C.; Gallagher, B. L.; Main, P. C.; Henini, M.

2000-02-01

The breakdown of dissipationless current flow in the quantum Hall effect is studied for a two-dimensional hole gas at filling factors i=1 and 2. At high currents, the magnetoresistance curves at breakdown exhibit a series of steps accompanied by hysteresis and intermittent noise. These are compared with similar data for electron systems and are discussed in terms of a hydrodynamic model involving inter-Landau level scattering at the sample edge.

Holographic anyonic superfluidity

NASA Astrophysics Data System (ADS)

Jokela, Niko; Lifschytz, Gilad; Lippert, Matthew

2013-10-01

Starting with a holographic construction for a fractional quantum Hall state based on the D3-D7' system, we explore alternative quantization conditions for the bulk gauge fields. This gives a description of a quantum Hall state with various filling fractions. For a particular alternative quantization of the bulk gauge fields, we obtain a holographic anyon fluid in a vanishing background magnetic field. We show that this system is a superfluid, exhibiting the relevant gapless excitation.

Scanned gate microscopy of inter-edge channel scattering in the quantum Hall regime

NASA Astrophysics Data System (ADS)

Woodside, Michael T.; Vale, Chris; McEuen, Paul L.; Kadow, C.; Maranowski, K. D.; Gossard, A. C.

2000-03-01

Novel scanned probe techniques have recently been used to study in detail the microscopic properties of 2D electron gases in the quantum Hall regime [1]. We report local measurements of the scattering between edge states in a quantum Hall conductor with non-equilibrium edge state populations. Using an atomic force microscope (AFM) tip as a local gate to perturb the edge states, we find that the scattering is dominated by individual, microscopic scattering sites, which we directly image and characterise. The dependence of the scattering on the AFM tip voltage reveals that it involves tunneling both through quasi-bound impurity states and through disorder-induced weak links between the edge states. [1] S. H. Tessmer et al., Nature 392, 51 (1998); K. L. McCormick et al., Phys. Rev. B 59, 4654 (1999); A. Yacoby et al., Solid State Comm. 111, 1 (1999).

Non-Abelian fermionization and fractional quantum Hall transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hui, Aaron; Mulligan, Michael; Kim, Eun-Ah

There has been a recent surge of interest in dualities relating theories of Chern-Simons gauge fields coupled to either bosons or fermions within the condensed matter community, particularly in the context of topological insulators and the half-filled Landau level. Here, we study the application of one such duality to the long-standing problem of quantum Hall interplateaux transitions. The key motivating experimental observations are the anomalously large value of the correlation length There has been a recent surge of interest in dualities relating theories of Chern-Simons gauge fields coupled to either bosons or fermions within the condensed matter community, particularly in the context of topological insulators and the half-filled Landau level. Here, we study the application of one such duality to the long-standing problem of quantum Hall inter-plateaux transitions. The key motivating experimental observations are the anomalously large value of the correlation length exponentmore » $$\

Non-Abelian fermionization and fractional quantum Hall transitions

DOE PAGES

Hui, Aaron; Mulligan, Michael; Kim, Eun-Ah

2018-02-08

There has been a recent surge of interest in dualities relating theories of Chern-Simons gauge fields coupled to either bosons or fermions within the condensed matter community, particularly in the context of topological insulators and the half-filled Landau level. Here, we study the application of one such duality to the long-standing problem of quantum Hall interplateaux transitions. The key motivating experimental observations are the anomalously large value of the correlation length There has been a recent surge of interest in dualities relating theories of Chern-Simons gauge fields coupled to either bosons or fermions within the condensed matter community, particularly in the context of topological insulators and the half-filled Landau level. Here, we study the application of one such duality to the long-standing problem of quantum Hall inter-plateaux transitions. The key motivating experimental observations are the anomalously large value of the correlation length exponentmore » $$\

From rotating atomic rings to quantum Hall states.

PubMed

Roncaglia, M; Rizzi, M; Dalibard, J

2011-01-01

Considerable efforts are currently devoted to the preparation of ultracold neutral atoms in the strongly correlated quantum Hall regime. However, the necessary angular momentum is very large and in experiments with rotating traps this means spinning frequencies extremely near to the deconfinement limit; consequently, the required control on parameters turns out to be too stringent. Here we propose instead to follow a dynamic path starting from the gas initially confined in a rotating ring. The large moment of inertia of the ring-shaped fluid facilitates the access to large angular momenta, corresponding to giant vortex states. The trapping potential is then adiabatically transformed into a harmonic confinement, which brings the interacting atomic gas in the desired quantum-Hall regime. We provide numerical evidence that for a broad range of initial angular frequencies, the giant-vortex state is adiabatically connected to the bosonic ν = 1/2 Laughlin state.

Creating fractional quantum Hall states with atomic clusters using light-assisted insertion of angular momentum

NASA Astrophysics Data System (ADS)

Zhang, Junyi; Beugnon, Jerome; Nascimbene, Sylvain

We describe a protocol to prepare clusters of ultracold bosonic atoms in strongly interacting states reminiscent of fractional quantum Hall states. Our scheme consists in injecting a controlled amount of angular momentum to an atomic gas using Raman transitions carrying orbital angular momentum. By injecting one unit of angular momentum per atom, one realizes a single-vortex state, which is well described by mean-field theory for large enough particle numbers. We also present schemes to realize fractional quantum Hall states, namely, the bosonic Laughlin and Moore-Read states. We investigate the requirements for adiabatic nucleation of such topological states, in particular comparing linear Landau-Zener ramps and arbitrary ramps obtained from optimized control methods. We also show that this protocol requires excellent control over the isotropic character of the trapping potential. ERC-Synergy Grant UQUAM, ANR-10-IDEX-0001-02, DIM NanoK Atocirc project.

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures.

PubMed

Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

2011-12-20

Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO(3) bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in e(g) systems are also discussed.

Tunability of the fractional quantum Hall states in buckled Dirac materials

NASA Astrophysics Data System (ADS)

Apalkov, Vadym M.; Chakraborty, Tapash

2014-12-01

We report on the fractional quantum Hall states of germanene and silicene where one expects a strong spin-orbit interaction. This interaction causes an enhancement of the electron-electron interaction strength in one of the Landau levels corresponding to the valence band of the system. This enhancement manifests itself as an increase of the fractional quantum Hall effect gaps compared to that in graphene and is due to the spin-orbit induced coupling of the Landau levels of the conduction and valence bands, which modifies the corresponding wave functions and the interaction within a single level. Due to the buckled structure, a perpendicular electric field lifts the valley degeneracy and strongly modifies the interaction effects within a single Landau level: in one valley the perpendicular electric field enhances the interaction strength in the conduction band Landau level, while in another valley, the electric field strongly suppresses the interaction effects.

Nonreciprocal quantum Hall devices with driven edge magnetoplasmons in two-dimensional materials

NASA Astrophysics Data System (ADS)

Bosco, S.; DiVincenzo, D. P.

2017-05-01

We develop a theory that describes the response of nonreciprocal devices employing two-dimensional materials in the quantum Hall regime capacitively coupled to external electrodes. As the conduction in these devices is understood to be associated to the edge magnetoplasmons (EMPs), we first investigate the EMP problem by using the linear response theory in the random phase approximation. Our model can incorporate several cases that were often treated on different grounds in literature. In particular, we analyze plasmonic excitations supported by a smooth and sharp confining potential in a two-dimensional electron gas, and in monolayer graphene, and we point out the similarities and differences in these materials. We also account for a general time-dependent external drive applied to the system. Finally, we describe the behavior of a nonreciprocal quantum Hall device: the response contains additional resonant features, which were not foreseen from previous models.

Fractionally charged skyrmions in fractional quantum Hall effect

PubMed Central

Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; Pinczuk, A.; Jain, J. K.

2015-01-01

The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region. PMID:26608906

Transport and magnetic properties in topological materials

NASA Astrophysics Data System (ADS)

Liang, Tian

The notion of topology has been the central topic of the condensed matter physics in recent years, ranging from 2D quantum hall (QH) and quantum spin hall (QSH) states, 3D topological insulators (TIs), topological crystalline insulators (TCIs), 3D Dirac/Weyl semimetals, and topological superconductors (TSCs) etc. The key notion of the topological materials is the bulk edge correspondence, i.e., in order to preserve the symmetry of the whole system (bulk+edge), edge states must exist to counter-compensate the broken symmetry of the bulk. Combined with the fact that the bulk is topologically protected, the edge states are robust due to the bulk edge correspondence. This leads to interesting phenomena of chiral edge states in 2D QH, helical edge states in 2D QSH, "parity anomaly'' (time reversal anomaly) in 3D TI, helical edge states in the mirror plane of TCI, chiral anomaly in Dirac/Weyl semimetals, Majorana fermions in the TSCs. Transport and magnetic properties of topological materials are investigated to yield intriguing phenomena. For 3D TI Bi1.1Sb0.9Te 2S, anomalous Hall effect (AHE) is observed, and for TCI Pb1-x SnxSe, Seebeck/Nernst measurements reveal the anomalous sign change of Nernst signals as well as the massive Dirac fermions. Ferroelectricity and pressure measurements show that TCI Pb1-xSnxTe undergoes quantum phase transition (QPT) from trivial insulator through Weyl semimetal to anomalous insulator. Dirac semimetals Cd3As2, Na 3Bi show interesting results such as the ultrahigh mobility 10 7cm2V-1s-1 protected from backscattering at zero magnetic field, as well as anomalous Nernst effect (ANE) for Cd3As2, and the negative longitudinal magnetoresistance (MR) due to chiral anomaly for Na3Bi. In-plane and out-of-plane AHE are observed for semimetal ZrTe5 by in-situ double-axes rotation measurements. For interacting system Eu2Ir2O7, full angle torque magnetometry measurements reveal the existence of orthogonal magnetization breaking the symmetry of handedness, as well as additional order parameter which breaks the underlying lattice symmetry. Heat capacity measurements for CoNb2O6 detect the neutral gapless fermion-like excitations near the quantum critical point (QCP) under transverse magnetic field. The implications of these phenomena are discussed.

Epitaxial Graphene: A New Material for Electronics

NASA Astrophysics Data System (ADS)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Epitaxial graphene

NASA Astrophysics Data System (ADS)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

DMRG study of fractional quantum Hall effect and valley skyrmions in graphene

NASA Astrophysics Data System (ADS)

Shibata, Naokazu

2011-12-01

The ground state and low-energy excitations of graphene and its bilayer are investigated by the density matrix renormalization group (DMRG) method. We analyze the effect of Coulomb interaction between the electrons including valley degrees of freedoms. The obtained results show finite charge excitation gap at various fractional fillings νn = 1/3, 2/5, 2/3 in the n = 0 and 1 Landau levels of single-layer graphene (SLG) and n = 2 Landau level of bilayer graphene (BLG). The lowest charge excitations at ν = 1/3, and 1 in SLG are valley skyrmions.

Thermal oxidation of Si/SiGe heterostructures for use in quantum dot qubits

NASA Astrophysics Data System (ADS)

Neyens, Samuel F.; Foote, Ryan H.; Knapp, T. J.; McJunkin, Thomas; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.

Here we demonstrate dry thermal oxidation of a Si/SiGe heterostructure at 700°C and use a Hall bar device to measure the mobility after oxidation to be 43,000 cm2V-1s-1 at a carrier density of 4.1 ×1011 cm-2. Surprisingly, we find no significant reduction in mobility compared with an Al2O3 device made with atomic layer deposition on the same heterostructure, indicating thermal oxidation can be used to process Si/SiGe quantum dot devices. This result provides a path for investigating improvements to the gate oxide in Si/SiGe qubit devices, whose performance is believed to be limited by charge noise in the oxide layer. This work was supported in part by ARO (W911NF-12-0607) and NSF (DMR-1206915 and PHY-1104660). Development and maintenance of the growth facilities used for fabricating samples is supported by DOE (DE-FG02-03ER46028). This research utilized NSF-supported shared facilities at the University of Wisconsin-Madison.

Exceptionally High Electric Double Layer Capacitances of Oligomeric Ionic Liquids.

PubMed

Matsumoto, Michio; Shimizu, Sunao; Sotoike, Rina; Watanabe, Masayoshi; Iwasa, Yoshihiro; Itoh, Yoshimitsu; Aida, Takuzo

2017-11-15

Electric double layer (EDL) capacitors are promising as next-generation energy accumulators if their capacitances and operation voltages are both high. However, only few electrolytes can simultaneously fulfill these two requisites. Here we report that an oligomeric ionic liquid such as IL4 TFSI with four imidazolium ion units in its structure provides a wide electrochemical window of ∼5.0 V, similar to monomeric ionic liquids. Furthermore, electrochemical impedance measurements using Au working electrodes demonstrated that IL4 TFSI exhibits an exceptionally high EDL capacitance of ∼66 μF/cm 2 , which is ∼6 times as high as those of monomeric ionic liquids so far reported. We also found that an EDL-based field effect transistor (FET) using IL4 TFSI as a gate dielectric material and SrTiO 3 as a channel material displays a very sharp transfer curve with an enhanced carrier accumulation capability of ∼64 μF/cm 2 , as determined by Hall-effect measurements.

Valley-polarized quantum transport generated by gauge fields in graphene

NASA Astrophysics Data System (ADS)

Settnes, Mikkel; Garcia, Jose H.; Roche, Stephan

2017-09-01

We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a {{e}2}/h Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.

Non-Abelian fractional quantum Hall states for hard-core bosons in one dimension

NASA Astrophysics Data System (ADS)

Paredes, Belén

2012-05-01

I present a family of one-dimensional bosonic liquids analogous to non-Abelian fractional quantum Hall states. A new quantum number is introduced to characterize these liquids, the chiral momentum, which differs from the usual angular or linear momentum in one dimension. As their two-dimensional counterparts, these liquids minimize a k-body hard-core interaction with the minimum total chiral momentum. They exhibit global order, with a hidden organization of the particles in k identical copies of a one-dimensional Laughlin state. For k=2 the state is a p-wave paired phase corresponding to the Pfaffian quantum Hall state. By imposing conservation of the total chiral momentum, an exact parent Hamiltonian is derived which involves long-range tunneling and interaction processes with an amplitude decaying with the chord distance. This family of non-Abelian liquids is shown to be in formal correspondence with a family of spin-(k)/(2) liquids which are total singlets made out of k indistinguishable resonating valence bond states. The corresponding spin Hamiltonians are obtained.

Spin-hall-active platinum thin films grown via atomic layer deposition

NASA Astrophysics Data System (ADS)

Schlitz, Richard; Amusan, Akinwumi Abimbola; Lammel, Michaela; Schlicht, Stefanie; Tynell, Tommi; Bachmann, Julien; Woltersdorf, Georg; Nielsch, Kornelius; Goennenwein, Sebastian T. B.; Thomas, Andy

2018-06-01

We study the magnetoresistance of yttrium iron garnet/Pt heterostructures in which the Pt layer was grown via atomic layer deposition (ALD). Magnetotransport experiments in three orthogonal rotation planes reveal the hallmark features of spin Hall magnetoresistance. To estimate the spin transport parameters, we compare the magnitude of the magnetoresistance in samples with different Pt thicknesses. We check the spin Hall angle and the spin diffusion length of the ALD Pt layers against the values reported for high-quality sputter-deposited Pt films. The spin diffusion length of 1.5 nm agrees well with that of platinum thin films reported in the literature, whereas the spin Hall magnetoresistance Δ ρ / ρ = 2.2 × 10 - 5 is approximately a factor of 20 smaller compared to that of our sputter-deposited films. Our results demonstrate that ALD allows fabricating spin-Hall-active Pt films of suitable quality for use in spin transport structures. This work provides the basis to establish conformal ALD coatings for arbitrary surface geometries with spin-Hall-active metals and could lead to 3D spintronic devices in the future.

Quantum group symmetry of the quantum Hall effect on non-flat surfaces

NASA Astrophysics Data System (ADS)

Alimohammadi, M.; Shafei Deh Abad, A.

1996-02-01

After showing that the magnetic translation operators are not the symmetries of the quantum Hall effect (QHE) on non-flat surfaces, we show that another set of operators which leads to the quantum group symmetries for some of these surfaces exists. As a first example we show that the su(2) symmetry of the QHE on a sphere leads to 0305-4470/29/3/010/img6(2) algebra in the equator. We explain this result by a contraction of su(2). Second, with the help of the symmetry operators of QHE on the Poincaré upper half plane, we will show that the ground-state wavefunctions form a representation of the 0305-4470/29/3/010/img6(2) algebra.

Topology versus Anderson localization: Nonperturbative solutions in one dimension

NASA Astrophysics Data System (ADS)

Altland, Alexander; Bagrets, Dmitry; Kamenev, Alex

2015-02-01

We present an analytic theory of quantum criticality in quasi-one-dimensional topological Anderson insulators. We describe these systems in terms of two parameters (g ,χ ) representing localization and topological properties, respectively. Certain critical values of χ (half-integer for Z classes, or zero for Z2 classes) define phase boundaries between distinct topological sectors. Upon increasing system size, the two parameters exhibit flow similar to the celebrated two-parameter flow of the integer quantum Hall insulator. However, unlike the quantum Hall system, an exact analytical description of the entire phase diagram can be given in terms of the transfer-matrix solution of corresponding supersymmetric nonlinear sigma models. In Z2 classes we uncover a hidden supersymmetry, present at the quantum critical point.

Coherence length saturation at the low temperature limit in two-dimensional hole gas

NASA Astrophysics Data System (ADS)

Shan, Pujia; Fu, Hailong; Wang, Pengjie; Yang, Jixiang; Pfeiffer, L. N.; West, K. W.; Lin, Xi

2018-05-01

The plateau-plateau transition in the integer quantum Hall effect is studied in three Hall bars with different widths. The slopes of the Hall resistance as a function of magnetic field follow the scaling power law as expected in the plateau-plateau transition, and saturate at the low temperature limit. Surprisingly, the saturation temperature is irrelevant with the Hall bar size, which suggests that the saturation of the coherence length is intrinsic.

Topologically protected gates for quantum computation with non-Abelian anyons in the Pfaffian quantum Hall state

NASA Astrophysics Data System (ADS)

Georgiev, Lachezar S.

2006-12-01

We extend the topological quantum computation scheme using the Pfaffian quantum Hall state, which has been recently proposed by Das Sarma , in a way that might potentially allow for the topologically protected construction of a universal set of quantum gates. We construct, for the first time, a topologically protected controlled-NOT gate, which is entirely based on quasihole braidings of Pfaffian qubits. All single-qubit gates, except for the π/8 gate, are also explicitly implemented by quasihole braidings. Instead of the π/8 gate we try to construct a topologically protected Toffoli gate, in terms of the controlled-phase gate and CNOT or by a braid-group-based controlled-controlled- Z precursor. We also give a topologically protected realization of the Bravyi-Kitaev two-qubit gate g3 .

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sengupta, Parijat; Bellotti, Enrico

2016-05-23

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; themore » spin Hall conductivity of WSe{sub 2} was found to be larger.« less

Optimal Decay of Wannier functions in Chern and Quantum Hall Insulators

NASA Astrophysics Data System (ADS)

Monaco, Domenico; Panati, Gianluca; Pisante, Adriano; Teufel, Stefan

2018-01-01

We investigate the localization properties of independent electrons in a periodic background, possibly including a periodic magnetic field, as e. g. in Chern insulators and in quantum Hall systems. Since, generically, the spectrum of the Hamiltonian is absolutely continuous, localization is characterized by the decay, as {|x| → ∞} , of the composite (magnetic) Wannier functions associated to the Bloch bands below the Fermi energy, which is supposed to be in a spectral gap. We prove the validity of a localization dichotomy in the following sense: either there exist exponentially localized composite Wannier functions, and correspondingly the system is in a trivial topological phase with vanishing Hall conductivity, or the decay of any composite Wannier function is such that the expectation value of the squared position operator, or equivalently of the Marzari-Vanderbilt localization functional, is {+ ∞} . In the latter case, the Bloch bundle is topologically non-trivial, and one expects a non-zero Hall conductivity.

Traceable quantum sensing and metrology relied up a quantum electrical triangle principle

NASA Astrophysics Data System (ADS)

Fang, Yan; Wang, Hengliang; Yang, Xinju; Wei, Jingsong

2016-11-01

Hybrid quantum state engineering in quantum communication and imaging1-2 needs traceable quantum sensing and metrology, which are especially critical to quantum internet3 and precision measurements4 that are important across all fields of science and technology-. We aim to set up a mode of traceable quantum sensing and metrology. We developed a method by specially transforming an atomic force microscopy (AFM) and a scanning tunneling microscopy (STM) into a conducting atomic force microscopy (C-AFM) with a feedback control loop, wherein quantum entanglement enabling higher precision was relied upon a set-point, a visible light laser beam-controlled an interferometer with a surface standard at z axis, diffractometers with lateral standards at x-y axes, four-quadrant photodiode detectors, a scanner and its image software, a phase-locked pre-amplifier, a cantilever with a kHz Pt/Au conducting tip, a double barrier tunneling junction model, a STM circuit by frequency modulation and a quantum electrical triangle principle involving single electron tunneling effect, quantum Hall effect and Josephson effect5. The average and standard deviation result of repeated measurements on a 1 nm height local micro-region of nanomedicine crystal hybrid quantum state engineering surface and its differential pA level current and voltage (dI/dV) in time domains by using C-AFM was converted into an international system of units: Siemens (S), an indicated value 0.86×10-12 S (n=6) of a relative standard uncertainty was superior over a relative standard uncertainty reference value 2.3×10-10 S of 2012 CODADA quantized conductance6. It is concluded that traceable quantum sensing and metrology is emerging.

Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet.

PubMed

Ulloa, Camilo; Duine, R A

2018-04-27

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

NASA Astrophysics Data System (ADS)

Ulloa, Camilo; Duine, R. A.

2018-04-01

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

Dyon proliferation in interacting quantum spin Hall edges

NASA Astrophysics Data System (ADS)

Lee, Shu-Ping; Maciejko, Joseph

We show that a quantum spin Hall system with intra-edge multiparticle backscattering and inter-edge exchange interactions exhibits a modular invariant zero-temperature phase diagram. We establish this through mapping to a classical 2D Coulomb gas with electrically and magnetically charged particles; strong coupling phases in the quantum edge problem correspond to the proliferation of various dyons in the Coulomb gas. Distinct dyon proliferated phases can be accessed by tuning the edge Luttinger parameters, for example using a split gate geometry. This research was supported by NSERC Grant #RGPIN-2014-4608, the Canada Research Chair Program (CRC) and the Canadian Institute for Advanced Research (CIFAR).

Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

NASA Astrophysics Data System (ADS)

Shang, T.; Yang, H. L.; Zhan, Q. F.; Zuo, Z. H.; Xie, Y. L.; Liu, L. P.; Zhang, S. L.; Zhang, Y.; Li, H. H.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2016-10-01

We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.

Fractional charge revealed in computer simulations of resonant tunneling in the fractional quantum Hall regime.

PubMed

Tsiper, E V

2006-08-18

The concept of fractional charge is central to the theory of the fractional quantum Hall effect. Here I use exact diagonalization as well as configuration space renormalization to study finite clusters which are large enough to contain two independent edges. I analyze the conditions of resonant tunneling between the two edges. The "computer experiment" reveals a periodic sequence of resonant tunneling events consistent with the experimentally observed fractional quantization of electric charge in units of e/3 and e/5.

Structure solution of network materials by solid-state NMR without knowledge of the crystallographic space group.

PubMed

Brouwer, Darren H

2013-01-01

An algorithm is presented for solving the structures of silicate network materials such as zeolites or layered silicates from solid-state (29)Si double-quantum NMR data for situations in which the crystallographic space group is not known. The algorithm is explained and illustrated in detail using a hypothetical two-dimensional network structure as a working example. The algorithm involves an atom-by-atom structure building process in which candidate partial structures are evaluated according to their agreement with Si-O-Si connectivity information, symmetry restraints, and fits to (29)Si double quantum NMR curves followed by minimization of a cost function that incorporates connectivity, symmetry, and quality of fit to the double quantum curves. The two-dimensional network material is successfully reconstructed from hypothetical NMR data that can be reasonably expected to be obtained for real samples. This advance in "NMR crystallography" is expected to be important for structure determination of partially ordered silicate materials for which diffraction provides very limited structural information. Copyright © 2013 Elsevier Inc. All rights reserved.

Emergent Momentum-Space Skyrmion Texture on the Surface of Topological Insulators

NASA Astrophysics Data System (ADS)

Mohanta, Narayan; Kampf, Arno P.; Kopp, Thilo

The quantum anomalous Hall effect has been theoretically predicted and experimentally verified in magnetic topological insulators. In addition, the surface states of these materials exhibit a hedgehog-like ``spin'' texture in momentum space. Here, we apply the previously formulated low-energy model for Bi2Se3, a parent compound for magnetic topological insulators, to a slab geometry in which an exchange field acts only within one of the surface layers. In this sample set up, the hedgehog transforms into a skyrmion texture beyond a critical exchange field. This critical field marks a transition between two topologically distinct phases. The topological phase transition takes place without energy gap closing at the Fermi level and leaves the transverse Hall conductance unchanged and quantized to e2 / 2 h . The momentum-space skyrmion texture persists in a finite field range. It may find its realization in hybrid heterostructures with an interface between a three-dimensional topological insulator and a ferromagnetic insulator. The work was supported by the Deutsche Forschungsgemeinschaft through TRR 80.

Lattices for fractional Chern insulators

NASA Astrophysics Data System (ADS)

Repellin, Cécile; Regnault, Nicolas

2018-04-01

Individual electrons are elementary particles, but in some solid-state systems, electrons can act collectively as though they had a fraction of an electron's charge. This emergent behavior is spectacularly observed in two-dimensional (2D) electron gases as the fractional quantum Hall (FQH) effect in the form of a fractional quantized transverse (or Hall) conductivity and in shot-noise experiments. These experiments require low temperatures and very large magnetic fields in order to create strong electron interactions. This latter condition now appears not to be as essential as originally thought. On page 62 of this issue, Spanton et al. (1) report on an experimental platform based on bilayer graphene that forms a moiré pattern with an encapsulating hexagonal boron nitride layer. They observed incompressible phases with a fractional filling of the band structure with a nonzero Chern number (it has quantized properties robust to local perturbations, or topologically invariant). Some of which have no analog in traditional FQH systems (see the figure).

Theoretical Investigation of Light Transmission in a Slab Cavity via Kerr Nonlinearity of Carbon Nanotube Quantum Dot Nanostructure

NASA Astrophysics Data System (ADS)

Solookinejad, Gh.; Jabbari, M.; Sangachin, E. Ahmadi; Asadpour, S. H.

2018-01-01

In this paper, we discuss the transmission properties of weak probe laser field propagate through slab cavity with defect layer of carbon-nanotube quantum dot (CNT-QD) nanostructure. We show that due to spin-orbit coupling, the double electromagnetically induced transparency (EIT) windows appear and the giant Kerr nonlinearity of the intracavity medium can lead to manipulating of transmission coefficient of weak probe light. The thickness effect of defect layer medium has also been analyzed on transmission properties of probe laser field. Our proposed model may be useful for integrated photonics devices based on CNT-QD for applications in all-optical systems which require multiple EIT effect.

How can we probe the atom mass currents induced by synthetic gauge fields?

NASA Astrophysics Data System (ADS)

Paramekanti, Arun; Killi, Matthew; Trotzky, Stefan

2013-05-01

Ultracold atomic fermions and bosons in an optical lattice can have quantum ground states which support equilibrium currents in the presence of synthetic magnetic fields or spin orbit coupling. As a tool to uncover these mass currents, we propose using an anisotropic quantum quench of the optical lattice which dynamically converts the current patterns into measurable density patterns. Using analytical calculations and numerical simulations, we show that this scheme can probe diverse equilibrium bulk current patterns in Bose superfluids and Fermi fluids induced by synthetic magnetic fields, as well as detect the chiral edge currents in topological states of atomic matter such as quantum Hall and quantum spin Hall insulators. This work is supported by NSERC of Canada and the Canadian Institute for Advanced Research.

Production of Charmonium at Threshold in Hall A and C at Jefferson Lab

DOE PAGES

Hafidi, K.; Joosten, S.; Meziani, Z. -E.; ...

2017-05-27

Here, we describe in this paper two approved experiments in Hall A and Hall C at Jefferson Lab that will investigate the pure gluonic component of the strong interaction of Quantum ChromoDynamics by measuring the elastic J/ψ electro and photo-production cross section in the threshold region as well as explore the nature of the recently discovered LHCb charmed pentaquarks.

Structural disorder of natural BimSen superlattices grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Springholz, G.; Wimmer, S.; Groiss, H.; Albu, M.; Hofer, F.; Caha, O.; Kriegner, D.; Stangl, J.; Bauer, G.; Holý, V.

2018-05-01

The structure and morphology of BimSen epitaxial layers with compositions ranging from Bi2Se3 to the Bi1Se1 grown by molecular beam epitaxy with different flux compositions are investigated by transmission electron microscopy, high-resolution x-ray diffraction, and atomic force microscopy. It is shown that the lattice structure changes significantly as a function of the beam flux composition, i.e., Se/BiSe flux ratio that determines the stoichiometry of the layers. A perfect Bi2Se3 phase is formed only with a sufficiently high additional Se flux, whereas Bi1Se1 is obtained when only a BiSe compound source without additional Se is used. For intermediate values of the excess Se flux during growth, Bi2Se3 -δ layers are obtained with the Se deficit δ varying between 0 and 1. This Se deficit is accommodated by incorporation of additional Bi-Bi double layers into the Bi2Se3 structure that otherwise exclusively consists of Se-Bi-Se-Bi-Se quintuple layers. While a periodic insertion of such Bi double layers would result in the formation of natural BimSen superlattices, we find that this Bi double-layer insertion is rather stochastic with a high degree of disorder depending on the film composition. Therefore, the structure of such epilayers is better described by a one-dimensional paracrystal model, consisting of disordered sequences of quintuple and double layers rather than by strictly periodic natural superlattices. From detailed analysis of the x-ray diffraction data, we determine the dependence of the lattice parameters a and c and distances of the individual (0001) planes dj as a function of composition, evidencing that only the in-plane lattice parameter a shows a linear dependence on composition. The simulation of the diffraction curves with the random stacking paracrystal model yields an excellent agreement with the experimental data and it brings quantitative information on the randomness of the stacking sequence, which is compared to growth modeling using Monte Carlo simulations. The analysis of transmission electron microscopy data furthermore confirms that the Bi-Bi bilayers contain a large amount of vacancies of up to 25%. Conductivity and Hall data confirm that BimSen phases containing Bi-Bi double layers exhibit a rather semimetallic behavior.

Fractionally charged skyrmions in fractional quantum Hall effect

DOE PAGES

Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; ...

2015-11-26

The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeemanmore » energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region.« less

Quantum spin Hall state in monolayer 1T '-WTe 2

DOE PAGES

Tang, Shujie; Zhang, Chaofan; Wong, Dillon; ...

2017-06-26

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T '-WTe 2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulkmore » bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T '-WTe 2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).« less

Quantum spin Hall state in monolayer 1T '-WTe 2

DOE PAGES

Tang, Shujie; Zhang, Chaofan; Wong, Dillon; ...

2017-06-26

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T '-WTe 2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulkmore » bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Finally, our results establish monolayer 1T '-WTe 2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).« less

Optical probing of quantum Hall effect of composite fermions and of the liquid-insulator transition

NASA Astrophysics Data System (ADS)

Rossella, F.; Bellani, V.; Dionigi, F.; Amado, M.; Diez, E.; Kowalik, K.; Biasiol, G.; Sorba, L.

2011-12-01

In the photoluminescence spectra of a two-dimensional electron gas in the fractional quantum Hall regime we observe the states at filling factors ν = 4/5, 5/7, 4/11 and 3/8 as clear minima in the intensity or area emission peak. The first three states are described as interacting composite fermions in fractional quantum Hall regime. The minimum in the intensity at ν = 3/8, which is not explained within this picture, can be an evidence of a suppression of the screening of the Coulomb interaction among the effective quasi-particles involved in this intriguing state. The magnetic field energy dispersion at very low temperatures is also discussed. At low field the emission follows a Landau dispersion with a screened magneto-Coulomb contribution. At intermediate fields the hidden symmetry manifests. At high field above ν = 1/3 the electrons correlate into an insulating phase, and the optical emission behaviour at the liquid-insulator transition is coherent with a charge ordering driven by Coulomb correlations.

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Houqiang; Lu, Zhijian; Zhao, Yuji

We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n{sub 0}), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carriermore » lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.« less

Electric double-layer capacitance between an ionic liquid and few-layer graphene.

PubMed

Uesugi, Eri; Goto, Hidenori; Eguchi, Ritsuko; Fujiwara, Akihiko; Kubozono, Yoshihiro

2013-01-01

Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance Cg. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance CEDL between the ionic liquid and graphene involves the series connection of Cg and the quantum capacitance Cq, which is proportional to the density of states. We investigated the variables that determine CEDL at the molecular level by varying the number of graphene layers n and thereby optimising Cq. The CEDL value is governed by Cq at n < 4, and by Cg at n > 4. This transition with n indicates a composite nature for CEDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor.

Electric double-layer capacitance between an ionic liquid and few-layer graphene

PubMed Central

Uesugi, Eri; Goto, Hidenori; Eguchi, Ritsuko; Fujiwara, Akihiko; Kubozono, Yoshihiro

2013-01-01

Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance Cg. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance CEDL between the ionic liquid and graphene involves the series connection of Cg and the quantum capacitance Cq, which is proportional to the density of states. We investigated the variables that determine CEDL at the molecular level by varying the number of graphene layers n and thereby optimising Cq. The CEDL value is governed by Cq at n < 4, and by Cg at n > 4. This transition with n indicates a composite nature for CEDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor. PMID:23549208

Controllable Quantum States Mesoscopic Superconductivity and Spintronics (MS+S2006)

NASA Astrophysics Data System (ADS)

Takayanagi, Hideaki; Nitta, Junsaku; Nakano, Hayato

2008-10-01

Mesoscopic effects in superconductors. Tunneling measurements of charge imbalance of non-equilibrium superconductors / R. Yagi. Influence of magnetic impurities on Josephson current in SNS junctions / T. Yokoyama. Nonlinear response and observable signatures of equilibrium entanglement / A. M. Zagoskin. Stimulated Raman adiabatic passage with a Cooper pair box / Giuseppe Falci. Crossed Andreev reflection-induced giant negative magnetoresistance / Francesco Giazotto -- Quantum modulation of superconducting junctions. Adiabatic pumping through a Josephson weak link / Fabio Taddei. Squeezing of superconducting qubits / Kazutomu Shiokawa. Detection of Berrys phases in flux qubits with coherent pulses / D. N. Zheng. Probing entanglement in the system of coupled Josephson qubits / A. S. Kiyko. Josephson junction with tunable damping using quasi-particle injection / Ryuta Yagi. Macroscopic quantum coherence in rf-SQUIDs / Alexey V. Ustinov. Bloch oscillations in a Josephson circuit / D. Esteve. Manipulation of magnetization in nonequilibrium superconducting nanostructures / F. Giazotto -- Superconducting qubits. Decoherence and Rabi oscillations in a qubit coupled to a quantum two-level system / Sahel Ashhab. Phase-coupled flux qubits: CNOT operation, controllable coupling and entanglement / Mun Dae Kim. Characteristics of a switchable superconducting flux transformer with a DC-SQUID / Yoshihiro Shimazu. Characterization of adiabatic noise in charge-based coherent nanodevices / E. Paladino -- Unconventional superconductors. Threshold temperatures of zero-bias conductance peak and zero-bias conductance dip in diffusive normal metal/superconductor junctions / Iduru Shigeta. Tunneling conductance in 2DEG/S junctions in the presence of Rashba spin-orbit coupling / T. Yokoyama. Theory of charge transport in diffusive ferromagnet/p-wave superconductor junctions / T. Yokoyama. Theory of enhanced proximity effect by the exchange field in FS bilayers / T. Yokoyama. Theory of Josephson effect in diffusive d-wave junctions / T. Yokoyama. Quantum dissipation due to the zero energy bound states in high-T[symbol] superconductor junctions / Shiro Kawabata. Spin-polarized heat transport in ferromagnet/unconventional superconductor junctions / T. Yokoyama. Little-Parks oscillations in chiral p-wave superconducting rings / Mitsuaki Takigawa. Theoretical study of synergy effect between proximity effect and Andreev interface resonant states in triplet p-wave superconductors / Yasunari Tanuma. Theory of proximity effect in unconventional superconductor junctions / Y. Tanaka -- Quantum information. Analyzing the effectiveness of the quantum repeater / Kenichiro Furuta. Architecture-dependent execution time of Shor's algorithm / Rodney Van Meter -- Quantum dots and Kondo effects. Coulomb blockade properties of 4-gated quantum dot / Shinichi Amaha. Order-N electronic structure calculation of n-type GaAs quantum dots / Shintaro Nomura. Transport through double-dots coupled to normal and superconducting leads / Yoichi Tanaka. A study of the quantum dot in application to terahertz single photon counting / Vladimir Antonov. Electron transport through laterally coupled double quantum dots / T. Kubo. Dephasing in Kondo systems: comparison between theory and experiment / F. Mallet. Kondo effect in quantum dots coupled with noncollinear ferromagnetic leads / Daisuke Matsubayashi. Non-crossing approximation study of multi-orbital Kondo effect in quantum dot systems / Tomoko Kita. Theoretical study of electronic states and spin operation in coupled quantum dots / Mikio Eto. Spin correlation in a double quantum dot-quantum wire coupled system / S. Sasaki. Kondo-assisted transport through a multiorbital quantum dot / Rui Sakano. Spin decay in a quantum dot coupled to a quantum point contact / Massoud Borhani -- Quantum wires, low-dimensional electrons. Control of the electron density and electric field with front and back gates / Masumi Yamaguchi. Effect of the array distance on the magnetization configuration of submicron-sized ferromagnetic rings / Tetsuya Miyawaki. A wide GaAs/GaAlAs quantum well simultaneously containing two dimensional electrons and holes / Ane Jensen. Simulation of the photon-spin quantum state transfer process / Yoshiaki Rikitake. Magnetotransport in two-dimensional electron gases on cylindrical surface / Friedland Klaus-Juergen. Full counting statistics for a single-electron transistor at intermediate conductance / Yasuhiro Utsumi. Creation of spin-polarized current using quantum point contacts and its detection / Mikio Eto. Density dependent electron effective mass in a back-gated quantum well / S. Nomura. The supersymmetric sigma formula and metal-insulator transition in diluted magnetic semiconductors / I. Kanazawa. Spin-photovoltaic effect in quantum wires / A. Fedorov -- Quantum interference. Nonequilibrium transport in Aharonov-Bohm interferometer with electron-phonon interaction / Akiko Ueda. Fano resonance and its breakdown in AB ring embedded with a molecule / Shigeo Fujimoto, Yuhei Natsume. Quantum resonance above a barrier in the presence of dissipation / Kohkichi Konno. Ensemble averaging in metallic quantum networks / F. Mallet -- Coherence and order in exotic materials. Progress towards an electronic array on liquid helium / David Rees. Measuring noise and cross correlations at high frequencies in nanophysics / T. Martin. Single wall carbon nanotube weak links / K. Grove-Rasmussen. Optical preparation of nuclear spins coupled to a localized electron spin / Guido Burkard. Topological effects in charge density wave dynamics / Toru Matsuura. Studies on nanoscale charge-density-wave systems: fabrication technique and transport phenomena / Katsuhiko Inagaki. Anisotropic behavior of hysteresis induced by the in-plane field in the v = 2/3 quantum Hall state / Kazuki Iwata. Phase diagram of the v = 2 bilayer quantum Hall state / Akira Fukuda -- Trapped ions (special talk). Quantum computation with trapped ions / Hartmut Häffner.

Low loss InGaAs/InP multiple quantum well waveguides

NASA Astrophysics Data System (ADS)

Koren, U.; Miller, B. I.; Koch, T. L.; Boyd, G. D.; Capik, R. J.

1986-12-01

Double heterostructure planar waveguides with an InGaAs/InP multiple quantum well (MQW) core and InP cladding layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ridge waveguides had a low propagation loss of 0.8 dB/cm for 1.52 micron input light. The indices of refraction for the guided TE and TM modes have been measured and the bulk dispersion curves of the MQW material for the 1.46-1.55 micron wavelength region were derived.

Effective anomalous Hall coefficient in an ultrathin Co layer sandwiched by Pt layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Peng; Wu, Di; Jiang, Zhengsheng

2014-02-14

Anomalous Hall effect in Co/Pt multilayer is important to study the effect of interface with strong spin-orbit coupling. However, the shunting effect of the layers in such system and the circuit in the plane perpendicular to the injected current were overlooked in most works and thus, anomalous Hall coefficient in Co/Pt multilayer has not been determined accurately. Considering the shunting effect and the equivalent circuit, we show that the effective anomalous Hall coefficient of a 0.5 nm thick Co layer sandwiched by Pt layers R{sub S} is 0.29 ± 0.01 μΩ cm/T at the zero temperature limit and increases to about 0.73 μΩ cm/T at the temperaturemore » of 300 K. R{sub S} is one order larger than that in bulk Co film, indicating the large contribution of the Co/Pt interface. R{sub S} increases with the resistivity of Co as well as a resistivity independent contribution of −0.23 ± 0.01 μΩ cm/T. The equivalent anomalous Hall current in the Co layer has a maximum of 1.1% of the injected transverse current in the Co layer around the temperature of 80 K.« less

Probing the geometry of the Laughlin state

DOE PAGES

Johri, Sonika; Papic, Z.; Schmitteckert, P.; ...

2016-02-05

It has recently been pointed out that phases of matter with intrinsic topological order, like the fractional quantum Hall states, have an extra dynamical degree of freedom that corresponds to quantum geometry. Here we perform extensive numerical studies of the geometric degree of freedom for the simplest example of fractional quantumHall states—the filling v = 1/3 Laughlin state.We perturb the system by a smooth, spatially dependent metric deformation and measure the response of the Hall fluid, finding it to be proportional to the Gaussian curvature of the metric. Further, we generalize the concept of coherent states to formulate the bulkmore » off-diagonal long range order for the Laughlin state, and compute the deformations of the metric in the vicinity of the edge of the system. We introduce a ‘pair amplitude’ operator and show that it can be used to numerically determine the intrinsic metric of the Laughlin state. Furthermore, these various probes are applied to several experimentally relevant settings that can expose the quantum geometry of the Laughlin state, in particular to systems with mass anisotropy and in the presence of an electric field gradient.« less

Dephasing in a 5/2 quantum Hall Mach-Zehnder interferometer due to the presence of neutral edge modes

NASA Astrophysics Data System (ADS)

Dinaii, Yehuda; Goldstein, Moshe; Gefen, Yuval

Non-Abelian statistics is an intriguing feature predicted to characterize quasiparticles in certain topological phases of matter. This property is both fascinating on the theoretical side and the key ingredient for the implementation of future topological quantum computers. A smoking gun manifestation of non-Abelian statistics consists of demonstrating that braiding of quasiparticles leads to transitions among different states in the relevant degenerate Hilbert manifold. This can be achieved utilizing a Mach-Zehnder interferometer, where Coulomb effects can be neglected, and the electric current is expected to carry clear signatures of non-Abelianity. Here we argue that attempts to measure non-Abelian statistics in the prominent quantum Hall fraction of 5/2 may fail; this can be understood by studying the corresponding edge theory at finite temperatures and bias. We find that the presence of neutral modes imposes stronger limitations on the experimental conditions as compared to quantum Hall states that do not support neutral edge modes. We discuss how to overcome this hindrance. Interestingly, neutral-mode-induced dephasing can be quite different in the Pfaffian state as compared to the anti-Pfaffian state, if the neutral and charge velocities are comparable.

Infrared spectroscopy of Landau levels of graphene.

PubMed

Jiang, Z; Henriksen, E A; Tung, L C; Wang, Y-J; Schwartz, M E; Han, M Y; Kim, P; Stormer, H L

2007-05-11

We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show in situ half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs, are resolved. Their transition energies are proportional to sqrt[B], and the deduced band velocity is (-)c approximately equal to 1.1 x 10(6) m/s. The lack of precise scaling between different LL transitions indicates considerable contributions of many-particle effects to the infrared transition energies.

Spin Hall driven domain wall motion in magnetic bilayers coupled by a magnetic oxide interlayer

NASA Astrophysics Data System (ADS)

Liu, Yang; Furuta, Masaki; Zhu, Jian-Gang Jimmy

2018-05-01

mCell, previously proposed by our group, is a four-terminal magnetoresistive device with isolated write- and read-paths for all-spin logic and memory applications. A mCell requires an electric-insulating magnetic layer to couple the spin Hall driven write-path to the magnetic free layer of the read-path. Both paths are magnetic layers with perpendicular anisotropy and their perpendicularly oriented magnetization needs to be maintained with this insertion layer. We have developed a magnetic oxide (FeOx) insertion layer to serve for these purposes. We show that the FeOx insertion layer provides sufficient magnetic coupling between adjacent perpendicular magnetic layers. Resistance measurement shows that this magnetic oxide layer can act as an electric-insulating layer. In addition, spin Hall driven domain wall motion in magnetic bi-layers coupled by the FeOx insertion layer is significantly enhanced compared to that in magnetic single layer; it also requires low voltage threshold that poses possibility for power-efficient device applications.

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

NASA Astrophysics Data System (ADS)

Zhang, Meng; Bhattacharya, Pallab; Guo, Wei; Banerjee, Animesh

2010-03-01

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 °C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1×1018 cm-3. The corresponding doping efficiency and hole mobility are ˜4.9% and 3.7 cm2/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λpeak=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

Generic superweak chaos induced by Hall effect

NASA Astrophysics Data System (ADS)

Ben-Harush, Moti; Dana, Itzhack

2016-05-01

We introduce and study the "kicked Hall system" (KHS), i.e., charged particles periodically kicked in the presence of uniform magnetic (B ) and electric (E ) fields that are perpendicular to each other and to the kicking direction. We show that for resonant values of B and E and in the weak-chaos regime of sufficiently small nonintegrability parameter κ (the kicking strength), there exists a generic family of periodic kicking potentials for which the Hall effect from B and E significantly suppresses the weak chaos, replacing it by "superweak" chaos (SWC). This means that the system behaves as if the kicking strength were κ2 rather than κ . For E =0 , SWC is known to be a classical fingerprint of quantum antiresonance, but it occurs under much less generic conditions, in particular only for very special kicking potentials. Manifestations of SWC are a decrease in the instability of periodic orbits and a narrowing of the chaotic layers, relative to the ordinary weak-chaos case. Also, for global SWC, taking place on an infinite "stochastic web" in phase space, the chaotic diffusion on the web is much slower than the weak-chaos one. Thus, the Hall effect can be relatively stabilizing for small κ . In some special cases, the effect is shown to cause ballistic motion for almost all parameter values. The generic global SWC on stochastic webs in the KHS appears to be the two-dimensional closest analog to the Arnol'd web in higher dimensional systems.

Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures

NASA Astrophysics Data System (ADS)

Giannini, Nathan; Yang, Zhou; Albrecht, Alexander R.; Sheik-Bahae, Mansoor

2017-02-01

Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaInP|GaAs double heterostructures (DHS) has never been realized. This is due to an unknown source of parasitic absorption. Prior studies have ruled out the possibility of the bulk absorption from the GaAs layer. Thus it is thought to be either at the air- GaInP interface, through the presence of dangling bonds, or in bulk GaInP through impurities. Using two-color thermallens calorimetry (based on the Z-scan technique), this study indicates that that the parasitic absorption likely originates from the GaInP bulk layers.

Improved performance of CdSe/CdS/PbS co-sensitized solar cell with double-layered TiO2 films as photoanode

NASA Astrophysics Data System (ADS)

Zhang, Xiaolong; Lin, Yu; Wu, Jihuai; Jing, Jing; Fang, Biaopeng

2017-07-01

Improving the photovoltaic performance of CdSe/CdS/PbS co-sensitized double-layered TiO2 solar cells is reported. Double-layered TiO2 films with TiO2 microspheres as the light blocking layers were prepared. PbS, CdS and CdSe quantum dots (QDs) were assembled onto TiO2 photoanodes by simple successive ionic layer absorption and reaction (SILAR) to fabricate CdSe/CdS/PbS co-sensitized solar cells. An improved power conversion efficiency (PCE) of 5.11% was achieved for CdSe/CdS/PbS co-sensitized solar cells at one sun illumination (AM 1.5 G, 100 mW cm-2), which had an improvement of 22.6% over that of the CdSe/CdS co-sensitized solar cells (4.17%). This enhancement is mainly attributed to their better ability of the absorption of solar light with the existence of PbS QDs, the reduction of charge recombination of the excited electron and longer lifetime of electrons, which have been proved with the photovoltaic studies and electrochemical impedance spectroscopy (EIS).

Tunable multifunctional topological insulators in ternary Heusler and related compounds

NASA Astrophysics Data System (ADS)

Felser, Claudia

2011-03-01

Recently the quantum spin Hall effect was theoretically predicted and experimentally realized in quantum wells based on the binary semiconductor HgTe. The quantum spin Hall state and topological insulators are new states of quantum matter interesting for both fundamental condensed-matter physics and material science. Many Heusler compounds with C1b structure are ternary semiconductors that are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the bandgap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by the lattice parameter) and magnitude of spin--orbit coupling (by the atomic charge). Based on first-principle calculations we demonstrate that around 50 Heusler compounds show band inversion similar to that of HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantumwell structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare-earth element Ln, which can realize additional properties ranging from superconductivity (for example LaPtBi) to magnetism (for example GdPtBi) and heavy fermion behaviour (for example YbPtBi). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors. Heusler compounds are similar to a stuffed diamond, correspondingly, it should be possible to find the ``high Z'' equivalent of graphene in a graphite-like structure with 18 valence electrons and with inverted bands. Indeed the ternary compounds, such as LiAuSe and KHgSb with a honeycomb structure of their Au-Se and Hg-Sb layers feature band inversion very similar to HgTe which is a strong precondition for existence of the topological surface states. These materials have a gap at the Fermi energy and are therefore candidates for 3D-topological insulators. Additionally they are centro-symmetric, therefore, it is possible to determine the parity of their wave functions, and hence, their topological character. Surprisingly, the compound KHgSb with the strong SOC is topologically trivial, whereas LiAuSe is found to be a topological non-trivial insulator.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galambos, John D.; Anderson, David E.; Bechtol, D.

The Second Target Station (STS) is a proposed upgrade for SNS. It includes a doubling of the accelerator power and an additional instrument hall. The new instrument hall will receive a 467 kW 10 Hz beam. The parameters and preliminary design aspects of the STS are presented for the accelerator, target systems, instrument hall, instruments and civil construction aspects.

Preparation and photovoltaic properties of CdS quantum dot-sensitized solar cell based on zinc tin mixed metal oxides.

PubMed

Cao, Jiupeng; Zhao, Yifan; Zhu, Yatong; Yang, Xiaoyu; Shi, Peng; Xiao, Hongdi; Du, Na; Hou, Wanguo; Qi, Genggeng; Liu, Jianqiang

2017-07-15

The present study reports a new type of quantum dot sensitized solar cells (QDSSCs) using the zinc tin mixed metal oxides (MMO) as the anode materials, which were obtained from the layered double hydroxide (LDH) precursor. The successive ionic layer adsorption and reaction (SILAR) method is applied to deposit CdS quantum dots. The effects of sensitizing cycles on the performance of CdS QDSSC are studied. Scanning electron microscopy (SEM), Transmission electron microscope (TEM) and X-ray diffraction (XRD) are used to identify the surface profile and crystal structure of the mixed metal oxides anode. The photovoltaic performance of the QDSSC is studied by the electrochemical method. The new CdS QDSSC exhibits power conversion efficiency (PCE) up to 0.48% when the anode was sensitized for eight cycles. Copyright © 2017 Elsevier Inc. All rights reserved.

Topological Defects in Double Exchange Materials and Anomalous Hall Resistance.

NASA Astrophysics Data System (ADS)

Calderón, M. J.; Brey, L.

2000-03-01

Recently it has been proposed that the anomalous Hall effect observed in Double Exchange materials is due to Berry phase effects caused by carrier hopping in a nontrivial spins background (J.Ye et al.) Phys.Rev.Lett. 83, 3737 1999.In order to study this possibility we have performed Monte Carlo simulations of the Double Exchange model and we have computed, as a function of the temperature, the number of topological defects in the system and the internal gauge magnetic field associated with these defects. In the simplest Double Exchange model the gauge magnetic field is random, and its average value is zero. The inclusion in the problem of spin-orbit coupling privileges the opposite direction of the magnetization and an anomalous Hall resistance (AHR) effect arises. We have computed the AHR, and we have obtained its temperature dependence. In agreement with previous experiments we obtain that AHR increases exponentially at low temperature and presents a maximum at a temperature slightly higher than the critical temperature.

Role of helical edge modes in the chiral quantum anomalous Hall state.

PubMed

Mani, Arjun; Benjamin, Colin

2018-01-22

Although indications are that a single chiral quantum anomalous Hall(QAH) edge mode might have been experimentally detected. There have been very many recent experiments which conjecture that a chiral QAH edge mode always materializes along with a pair of quasi-helical quantum spin Hall (QSH) edge modes. In this work we deal with a substantial 'What If?' question- in case the QSH edge modes, from which these QAH edge modes evolve, are not topologically-protected then the QAH edge modes wont be topologically-protected too and thus unfit for use in any applications. Further, as a corollary one can also ask if the topological-protection of QSH edge modes does not carry over during the evolution process to QAH edge modes then again our 'What if?' scenario becomes apparent. The 'how' of the resolution of this 'What if?' conundrum is the main objective of our work. We show in similar set-ups affected by disorder and inelastic scattering, transport via trivial QAH edge mode leads to quantization of Hall resistance and not that via topological QAH edge modes. This perhaps begs a substantial reinterpretation of those experiments which purported to find signatures of chiral(topological) QAH edge modes albeit in conjunction with quasi helical QSH edge modes.

Direct comparison of fractional and integer quantized Hall resistance

NASA Astrophysics Data System (ADS)

Ahlers, Franz J.; Götz, Martin; Pierz, Klaus

2017-08-01

We present precision measurements of the fractional quantized Hall effect, where the quantized resistance {{R}≤ft[ 1/3 \\right]} in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance {{R}[2]} , represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAs-based devices located in two cryostats. A value of 1-(5.3  ±  6.3) 10-8 (95% confidence level) was obtained for the ratio ({{R}≤ft[ 1/3 \\right]}/6{{R}[2]} ). This constitutes the most precise comparison of integer resistance quantization (in terms of h/e 2) in single-particle systems and of fractional quantization in fractionally charged quasi-particle systems. While not relevant for practical metrology, such a test of the validity of the underlying physics is of significance in the context of the upcoming revision of the SI.

Position-Momentum Duality and Fractional Quantum Hall Effect in Chern Insulators

DOE PAGES

Claassen, Martin; Lee, Ching-Hua; Thomale, Ronny; ...

2015-06-11

We develop a first quantization description of fractional Chern insulators that is the dual of the conventional fractional quantum Hall (FQH) problem, with the roles of position and momentum interchanged. In this picture, FQH states are described by anisotropic FQH liquids forming in momentum-space Landau levels in a fluctuating magnetic field. The fundamental quantum geometry of the problem emerges from the interplay of single-body and interaction metrics, both of which act as momentum-space duals of the geometrical picture of the anisotropic FQH effect. We then present a novel broad class of ideal Chern insulator lattice models that act as dualsmore » of the isotropic FQH effect. The interacting problem is well-captured by Haldane pseudopotentials and affords a detailed microscopic understanding of the interplay of interactions and non-trivial quantum geometry.« less

Admittance measurements in the quantum Hall effect regime

NASA Astrophysics Data System (ADS)

Hernández, C.; Consejo, C.; Chaubet, C.

2014-11-01

In this work we present an admittance study of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. We have studied several Hall bars in different contacts configurations in the frequency range 100 Hz-1 MHz. Our interpretation is based on the Landauer-Büttiker theory and takes into account both the capacitance and the topology of the coaxial cables which are connected to the sample holder. We show that we always observe losses through the capacitive impedance of the coaxial cables, except in the two contacts configuration in which the cable capacitance does not influence the admittance measurement of the sample. In this case, we measure the electrochemical capacitance of the 2DEG and show its dependence with the filling factor ν.

Chern number distribution and quantum phase transition in three-band lattices

NASA Astrophysics Data System (ADS)

Yu, H. L.; Zhai, Z. Y.

2018-05-01

We numerically study the integer quantum Hall effect on a three-band lattice. With modulating the hopping integral, the peculiar behaviors have been found: (1) Chern numbers of Landau subbands are redistributed; (2) the Hall plateau exhibits a direct transition; (3) there are critical states, where the neighboring two subbands merge together and the pseudogap leads to undefined Chern numbers. By contrast, in the presence of disorder, we find that the higher Hall plateau is sensitive to the disorder and it is always destroyed earlier than lower ones. We also find that the insulator-plateau transition becomes sharper with increasing the size of system. And the critical energy Ec1 gradually shifts to the center of plateau while Ec2 is unaffected with increasing the disorder strength.

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Wang, Ke; Harzheim, Achim; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip

In the quantum Hall (QH) regime, ballistic conducting paths along the physical edges of a sample appear, leading to quantized Hall conductance and vanishing longitudinal magnetoconductance. These QH edge states are often described as ballistic compressible strips separated by insulating incompressible strips, the spatial profiles of which can be crucial in understanding the stability and emergence of interaction driven QH states. In this work, we present tunneling transport between two QH edge states in bilayer graphene. Employing locally gated device structure, we guide and control the separation between the QH edge states in bilayer graphene. Using resonant Landau level tunneling as a spectroscopy tool, we measure the energy gap in bilayer graphene as a function of displacement field and probe the emergence and evolution of incompressible strips.

Spin Mode Switching at the Edge of a Quantum Hall System.

PubMed

Khanna, Udit; Murthy, Ganpathy; Rao, Sumathi; Gefen, Yuval

2017-11-03

Quantum Hall states can be characterized by their chiral edge modes. Upon softening the edge potential, the edge has long been known to undergo spontaneous reconstruction driven by charging effects. In this Letter we demonstrate a qualitatively distinct phenomenon driven by exchange effects, in which the ordering of the edge modes at ν=3 switches abruptly as the edge potential is made softer, while the ordering in the bulk remains intact. We demonstrate that this phenomenon is robust, and has many verifiable experimental signatures in transport.

Quantum anomalous Hall phase and half-metallic phase in ferromagnetic (111) bilayers of 4 d and 5 d transition metal perovskites

NASA Astrophysics Data System (ADS)

Chandra, Hirak Kumar; Guo, Guang-Yu

2017-04-01

Extraordinary electronic phases can form in artificial oxide heterostructures, which will provide a fertile ground for new physics and also give rise to novel device functions. Based on a systematic first-principles density functional theory study of the magnetic and electronic properties of the (111) superlattices (ABO3) 2/(AB'O3)10 of 4 d and 5 d transition metal perovskite (B = Ru, Rh, Ag, Re, Os, Ir, Au; AB'O3=LaAlO3 , SrTiO3) , we demonstrate that due to quantum confinement, bilayers (LaBO3)2 (B = Ru, Re, Os) and (SrBO3)2 (B = Rh, Os, Ir) are ferromagnetic with ordering temperatures up to room temperature. In particular, bilayer (LaOsO3)2 is an exotic spin-polarized quantum anomalous Hall insulator, while the other ferromagnetic bilayers are metallic with large Hall conductances comparable to the conductance quantum. Furthermore, bilayers (LaRuO3)2 and (SrRhO3)2 are half metallic, while the bilayer (SrIrO3)2 exhibits a peculiar colossal magnetic anisotropy. Our findings thus show that 4 d and 5 d metal perovskite (111) bilayers are a class of quasi-two-dimensional materials for exploring exotic quantum phases and also for advanced applications such as low-power nanoelectronics and oxide spintronics.

Universal DC Hall conductivity of Jain's state ν = N/2N +/- 1

NASA Astrophysics Data System (ADS)

Nguyen, Dung; Son, Dam

We present the Fermi-liquid theory of the fractional quantum Hall effect to describe Jain's states with filling fraction ν =N/2 N +/- 1 , that are near half filling. We derive the DC Hall conductivity σH (t) in closed form within the validity of our model. The results show that, without long range interaction, DC Hall conductivity has the universal form which doesn't depend on the detail of short range Landau's parameters Fn. When long range interaction is included, DC Hall conductivity depends on both long range interaction and Landau's parameters. We also analyze the relation between DC Hall conductivity and static structure factor. This work was supported by the Chicago MRSEC, which is funded by NSF through Grant DMR-1420709.

Anomalous Hall Resistance in Bilayer Electron Systems

NASA Astrophysics Data System (ADS)

Ezawa, Z. F.; Suzuki, S.; Tsitsishvili, G.

2007-04-01

Interlayer phase coherence has revealed various novel features in bilayer quantum Hall (QH) systems. It is shown to make the QH resistance vanish instead of developing a Hall plateau in a bilayer counterflow geometry. It also induces another anomalous QH resistance discovered in a drag experiment. These theoretical results explain recent experimental data due to Kellogg et al. [PRL 93 (2004) 036801;PRL 88 (2002) 126804] and Tutuc et al.[PRL 93 (2004) 036802].

Barium: An Efficient Cathode Layer for Bulk-heterojunction Solar Cells

PubMed Central

Gupta, Vinay; Kyaw, Aung Ko Ko; Wang, Dong Hwan; Chand, Suresh; Bazan, Guillermo C.; Heeger, Alan J.

2013-01-01

We report Barium (Ba) cathode layer for bulk-heterojunction solar cells which enhanced the fill factor (FF) of p-DTS(FBTTh2)2/PC71BM BHJ solar cell up to 75.1%, one of the highest value reported for an organic solar cell. The external quantum efficiency exceeds 80%. Analysis of recombination mechanisms using the current-voltage (J–V) characteristics at various light intensities in the BHJ solar cell layer reveals that Ba prevents trap assisted Shockley-Read-Hall (SRH) recombination at the interface and with different thicknesses of the Ba, the recombination shifts towards bimolecular from monomolecular. Moreover, Ba increases shunt resistance and decreases the series resistance significantly. This results in an increase in the charge collection probability leading to high FF. This work identifies a new cathode interlayer which outclasses the all the reported interlayers in increasing FF leading to high power conversion efficiency and have significant implications in improving the performance of BHJ solar cells. PMID:23752562

Epitaxial growth of highly strained antimonene on Ag(111)

NASA Astrophysics Data System (ADS)

Mao, Ya-Hui; Zhang, Li-Fu; Wang, Hui-Li; Shan, Huan; Zhai, Xiao-Fang; Hu, Zhen-Peng; Zhao, Ai-Di; Wang, Bing

2018-06-01

The synthesis of antimonene, which is a promising group-V 2D material for both fundamental studies and technological applications, remains highly challenging. Thus far, it has been synthesized only by exfoliation or growth on a few substrates. In this study, we show that thin layers of antimonene can be grown on Ag(111) by molecular beam epitaxy. High-resolution scanning tunneling microscopy combined with theoretical calculations revealed that the submonolayer Sb deposited on a Ag(111) surface forms a layer of AgSb2 surface alloy upon annealing. Further deposition of Sb on the AgSb2 surface alloy causes an epitaxial layer of Sb to form, which is identified as antimonene with a buckled honeycomb structure. More interestingly, the lattice constant of the epitaxial antimonene (5 Å) is much larger than that of freestanding antimonene, indicating a high tensile strain of more than 20%. This kind of large strain is expected to make the antimonene a highly promising candidate for roomtemperature quantum spin Hall material.

Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal Cd3 As2

NASA Astrophysics Data System (ADS)

Schumann, Timo; Galletti, Luca; Kealhofer, David A.; Kim, Honggyu; Goyal, Manik; Stemmer, Susanne

2018-01-01

The magnetotransport properties of epitaxial films of Cd3 As2 , a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.

Graphene based d-character Dirac Systems

NASA Astrophysics Data System (ADS)

Li, Yuanchang; Zhang, S. B.; Duan, Wenhui

From graphene to topological insulators, Dirac material continues to be the hot topics in condensed matter physics. So far, almost all of the theoretically predicted or experimentally observed Dirac materials are composed of sp -electrons. By using first-principles calculations, we find the new Dirac system of transition-metal intercalated epitaxial graphene on SiC(0001). Intrinsically different from the conventional sp Dirac system, here the Dirac-fermions are dominantly contributed by the transition-metal d-electrons, which paves the way to incorporate correlation effect with Dirac-cone physics. Many intriguing quantum phenomena are proposed based on this system, including quantum spin Hall effect with large spin-orbital gap, quantum anomalous Hall effect, 100% spin-polarized Dirac fermions and ferromagnet-to-topological insulator transition.

Beyond the Fermi liquid paradigm: Hidden Fermi liquids

PubMed Central

Jain, J. K.; Anderson, P. W.

2009-01-01

An intense investigation of possible non-Fermi liquid states of matter has been inspired by two of the most intriguing phenomena discovered in the past quarter century, namely, high-temperature superconductivity and the fractional quantum Hall effect. Despite enormous conceptual strides, these two fields have developed largely along separate paths. Two widely employed theories are the resonating valence bond theory for high-temperature superconductivity and the composite fermion theory for the fractional quantum Hall effect. The goal of this perspective article is to note that they subscribe to a common underlying paradigm: They both connect these exotic quantum liquids to certain ordinary Fermi liquids residing in unphysical Hilbert spaces. Such a relation yields numerous nontrivial experimental consequences, exposing these theories to rigorous and definitive tests. PMID:19506260

Quasi-particle properties from tunneling in the v = 5/2 fractional quantum Hall state.

PubMed

Radu, Iuliana P; Miller, J B; Marcus, C M; Kastner, M A; Pfeiffer, L N; West, K W

2008-05-16

Quasi-particles with fractional charge and statistics, as well as modified Coulomb interactions, exist in a two-dimensional electron system in the fractional quantum Hall (FQH) regime. Theoretical models of the FQH state at filling fraction v = 5/2 make the further prediction that the wave function can encode the interchange of two quasi-particles, making this state relevant for topological quantum computing. We show that bias-dependent tunneling across a narrow constriction at v = 5/2 exhibits temperature scaling and, from fits to the theoretical scaling form, extract values for the effective charge and the interaction parameter of the quasi-particles. Ranges of values obtained are consistent with those predicted by certain models of the 5/2 state.

Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musalinov, S. B.; Anzulevich, A. P.; Bychkov, I. V.

2017-01-15

The results of simulation by the transfer-matrix method of TiO{sub 2}/SiO{sub 2} double-layer and TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO{sub 2}/SiO{sub 2} double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m{sup 2}) and for the case of zero reflection loss. It ismore » shown in the simulation that the optimized TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coating provides a 2.3 mA/cm{sup 2} gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO{sub 2}/SiO{sub 2} double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.« less

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

NASA Astrophysics Data System (ADS)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

2017-07-01

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

Fractional Quantization of the Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-02-27

The Fractional Quantum Hall Effect is caused by the condensation of a two-dimensional electron gas in a strong magnetic field into a new type of macroscopic ground state, the elementary excitations of which are fermions of charge 1/m, where m is an odd integer. A mathematical description is presented.

The multi-layer multi-configuration time-dependent Hartree method for bosons: theory, implementation, and applications.

PubMed

Cao, Lushuai; Krönke, Sven; Vendrell, Oriol; Schmelcher, Peter

2013-10-07

We develop the multi-layer multi-configuration time-dependent Hartree method for bosons (ML-MCTDHB), a variational numerically exact ab initio method for studying the quantum dynamics and stationary properties of general bosonic systems. ML-MCTDHB takes advantage of the permutation symmetry of identical bosons, which allows for investigations of the quantum dynamics from few to many-body systems. Moreover, the multi-layer feature enables ML-MCTDHB to describe mixed bosonic systems consisting of arbitrary many species. Multi-dimensional as well as mixed-dimensional systems can be accurately and efficiently simulated via the multi-layer expansion scheme. We provide a detailed account of the underlying theory and the corresponding implementation. We also demonstrate the superior performance by applying the method to the tunneling dynamics of bosonic ensembles in a one-dimensional double well potential, where a single-species bosonic ensemble of various correlation strengths and a weakly interacting two-species bosonic ensemble are considered.

Quantum anomalous Hall effect in magnetic topological insulators

DOE PAGES

Wang, Jing; Lian, Biao; Zhang, Shou -Cheng

2015-08-25

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Here, we give a theoretical introduction to the quantum anomalous Hall (QAH) effect based on magnetic topological insulators in two-dimensions (2D) and three-dimensions (3D). In 2D topological insulators, magnetic order breaks the symmetry between the counter-propagating helical edge states, and as a result, the quantum spin Hall effect can evolve into the QAH effect. In 3D, magnetic order opens up a gap for the topological surface states, and chiral edge state has been predicted to exist on the magnetic domain walls. We presentmore » the phase diagram in thin films of a magnetic topological insulator and review the basic mechanism of ferromagnetic order in magnetically doped topological insulators. We also review the recent experimental observation of the QAH effect. Furthermore, we discuss more recent theoretical work on the coexistence of the helical and chiral edge states, multi-channel chiral edge states, the theory of the plateau transition, and the thickness dependence in the QAH effect.« less

High-order multipole radiation from quantum Hall states in Dirac materials

NASA Astrophysics Data System (ADS)

Gullans, Michael J.; Taylor, Jacob M.; Imamoǧlu, Ataç; Ghaemi, Pouyan; Hafezi, Mohammad

2017-06-01

We investigate the optical response of strongly disordered quantum Hall states in two-dimensional Dirac materials and find qualitatively different effects in the radiation properties of the bulk versus the edge. We show that the far-field radiation from the edge is characterized by large multipole moments (>50 ) due to the efficient transfer of angular momentum from the electrons into the scattered light. The maximum multipole transition moment is a direct measure of the coherence length of the edge states. Accessing these multipole transitions would provide new tools for optical spectroscopy and control of quantum Hall edge states. On the other hand, the far-field radiation from the bulk appears as random dipole emission with spectral properties that vary with the local disorder potential. We determine the conditions under which this bulk radiation can be used to image the disorder landscape. Such optical measurements can probe submicron-length scales over large areas and provide complementary information to scanning probe techniques. Spatially resolving this bulk radiation would serve as a novel probe of the percolation transition near half filling.

Composite Fermions: Motivation, Successes, and Application to Fractional Quantum Hall Effect in Graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Jainendra

2011-07-15

The fractional quantum Hall effect (FQHE) is one of the most amazing collective states discovered in modern times. A remarkably detailed and accurate understanding of its nonperturbative physics has been achieved in terms of a new class of exotic particles called composite fermions. I will begin with a brief review of the composite fermion theory and its outstanding successes. The rest of the talk will be concerned with fractional quantum Hall effect in graphene, observed recently. I will present results of theoretical studies that demonstrate that composite fermions are formed in graphene as well, but the spin and valley degeneraciesmore » and the linear dispersion of electrons produce interesting new physics relative to that in the usual two-dimensional GaAs systems. Composite fermion theory allows detailed predictions about FQHE in graphene in regimes when either or both of the spin and valley degeneracies are broken. I will discuss the relevance of our theory to recent experiments. This work on FQHE in graphene has been performed in collaboration with Csaba Toke.« less

Activation energies for the ν=5/2 Fractional Quantum Hall Effect at 10 Tesla

NASA Astrophysics Data System (ADS)

Zhang, Chi; Du, R. R.; Pfeiffer, L. N.; West, K. W.

2010-03-01

We reported on the low-temperature magnetotransport in a high-purity (mobility ˜ 1x10^7cm^2/Vs) modulation-doped GaAs/AlGaAs quantum well with a high electron density (6x10^11 cm-2). A quantized ν=5/2 Hall plateau is observed at B ˜ 10 T, with an activation gap δ5/2˜ 125±10 mK; the plateau can persist up to ˜ 25^o tilt-field. We determined the activation energies δ and quasi-gap energies δ^quasi for the ν=5/2, 7/3, and 8/3 fractional quantum Hall states in tilted-magnetic field (θ). The δ5/2, δ7/3 and the δ5/2^quasi , δ7/3^quasi are found to decrease in θ. We will present the systematic data and discuss their implications on the spin-polarization of ν=5/2 states observed at 10 T.[4pt] [1] R. Willett, Phys. Rev. Lett. 59, 1776 (1987).[0pt] [2] W. Pan et al, Solid State Commun. 119, 641 (2001).

Wave-function description of conductance mapping for a quantum Hall electron interferometer

NASA Astrophysics Data System (ADS)

Kolasiński, K.; Szafran, B.

2014-04-01

Scanning gate microscopy of quantum point contacts (QPC) in the integer quantum Hall regime is considered in terms of the scattering wave functions with a finite-difference implementation of the quantum transmitting boundary approach. Conductance (G) maps for a clean QPC as well as for a system including an antidot within the QPC constriction are evaluated. The steplike locally flat G maps for clean QPCs turn into circular resonances that are reentrant in an external magnetic field when the antidot is introduced to the constriction. The current circulation around the antidot and the spacing of the resonances at the magnetic field scale react to the probe approaching the QPC. The calculated G maps with a rigid but soft antidot potential reproduce the features detected recently in the electron interferometer [F. Martins et al., Sci. Rep. 3, 1416 (2013), 10.1038/srep01416].

Electrons in Flatland

NASA Astrophysics Data System (ADS)

MacDonald, Allan

2007-04-01

Like the classical squares and triangles in Edwin Abbott's 19th century social satire and science fiction novel Flatland, electrons and other quantum particles behave differently when confined to a two-dimensional world. Condensed matter physicists have been intrigued and regularly suprised by two-dimensional electron systems since they were first studied in semiconductor field-effect-transistor devices over forty years ago. I will discuss some important milestones in the study of two-dimensional electrn systems, from the discoveries of the integer and fractional quantum Hall effects in the 1980's to recent quantum Hall effect work on quasiparticles with non-Abelian quantum statistics. Special attention will be given to a new electronic Flatland that has risen to prominence recently, graphene, which consists of a single sheet of carbon atoms in a honeycomb lattice arrangement. Graphene provides a realization of two-dimensional massless Dirac fermions which interact via nearly instantaneous Coulomb interactions. Early research on graphene has demonstrated yet again that Flatland exceeds expectations.

Exploring photonic topological insulator states in a circuit-QED lattice

NASA Astrophysics Data System (ADS)

Li, Jing-Ling; Shan, Chuan-Jia; Zhao, Feng

2018-04-01

We propose a simple protocol to explore the topological properties of photonic integer quantum Hall states in a one-dimensional circiut-QED lattice. By periodically modulating the on-site photonic energies in such a lattice, we demonstrate that this one-dimensional lattice model can be mapped into a two-dimensional integer quantum Hall insulator model. Based on the lattice-based cavity input-output theory, we show that both the photonic topological protected edge states and topological invariants can be clearly measured from the final steady state of the resonator lattice after taking into account cavity dissipation. Interestingly, we also find that the measurement signals associated with the above topological features are quite unambitious even in five coupled dissipative resonators. Our work opens up a new prospect of exploring topological states with a small-size dissipative quantum artificial lattice, which is quite attractive to the current quantum optics community.

Shot noise generated by graphene p–n junctions in the quantum Hall effect regime

PubMed Central

Kumada, N.; Parmentier, F. D.; Hibino, H.; Glattli, D. C.; Roulleau, P.

2015-01-01

Graphene offers a unique system to investigate transport of Dirac Fermions at p–n junctions. In a magnetic field, combination of quantum Hall physics and the characteristic transport across p–n junctions leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a p–n junction could be used as an electronic beam splitter. Here we report the shot noise study of the mode-mixing process and demonstrate the crucial role of the p–n junction length. For short p–n junctions, the amplitude of the noise is consistent with an electronic beam-splitter behaviour, whereas, for longer p–n junctions, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing. PMID:26337067

Phase Transitions of the Polariton Condensate in 2D Dirac Materials

NASA Astrophysics Data System (ADS)

Lee, Ki Hoon; Lee, Changhee; Min, Hongki; Chung, Suk Bum

2018-04-01

For the quantum well in an optical microcavity, the interplay of the Coulomb interaction and the electron-photon (e -ph) coupling can lead to the hybridizations of the exciton and the cavity photon known as polaritons, which can form the Bose-Einstein condensate above a threshold density. Additional physics due to the nontrivial Berry phase comes into play when the quantum well consists of the gapped two-dimensional Dirac material such as the transition metal dichalcogenide MoS2 or WSe2 . Specifically, in forming the polariton, the e -ph coupling from the optical selection rule due to the Berry phase can compete against the Coulomb electron-electron (e -e ) interaction. We find that this competition gives rise to a rich phase diagram for the polariton condensate involving both topological and symmetry breaking phase transitions, with the former giving rise to the quantum anomalous Hall and the quantum spin Hall phases.

Phase Transitions of the Polariton Condensate in 2D Dirac Materials.

PubMed

Lee, Ki Hoon; Lee, Changhee; Min, Hongki; Chung, Suk Bum

2018-04-13

For the quantum well in an optical microcavity, the interplay of the Coulomb interaction and the electron-photon (e-ph) coupling can lead to the hybridizations of the exciton and the cavity photon known as polaritons, which can form the Bose-Einstein condensate above a threshold density. Additional physics due to the nontrivial Berry phase comes into play when the quantum well consists of the gapped two-dimensional Dirac material such as the transition metal dichalcogenide MoS_{2} or WSe_{2}. Specifically, in forming the polariton, the e-ph coupling from the optical selection rule due to the Berry phase can compete against the Coulomb electron-electron (e-e) interaction. We find that this competition gives rise to a rich phase diagram for the polariton condensate involving both topological and symmetry breaking phase transitions, with the former giving rise to the quantum anomalous Hall and the quantum spin Hall phases.

Transmission and reflection of charge-density wave packets in a quantum Hall edge controlled by a metal gate

NASA Astrophysics Data System (ADS)

Matsuura, Masahiro; Mano, Takaaki; Noda, Takeshi; Shibata, Naokazu; Hotta, Masahiro; Yusa, Go

2018-02-01

Quantum energy teleportation (QET) is a proposed protocol related to quantum vacuum. The edge channels in a quantum Hall system are well suited for the experimental verification of QET. For this purpose, we examine a charge-density wave packet excited and detected by capacitively coupled front gate electrodes. We observe the waveform of the charge packet, which is proportional to the time derivative of the applied square voltage wave. Further, we study the transmission and reflection behaviors of the charge-density wave packet by applying a voltage to another front gate electrode to control the path of the edge state. We show that the threshold voltages where the dominant direction is switched in either transmission or reflection for dense and sparse wave packets are different from the threshold voltage where the current stops flowing in an equilibrium state.

Hall Plateaus at magic angles in ultraquantum Bismuth

NASA Astrophysics Data System (ADS)

Benoît, Fauqué.

2009-03-01

The behaviour of a three-dimensional electron gas in the presence of a magnetic field strong enough to put all carriers in the first Landau level (i.e. beyond the quantum limit) is a longstanding question of theoretical condensed matter physics [1]. This issue has been recently explored by two high-field experiments on elemental semi-metal Bismuth. In a first study of transport coefficients (which are dominated by hole-like carriers), the Nernst coefficient presented three unexpected maxima that are concomitant with quasi-plateaux in the Hall coefficient [2]. In a second series of experiments, torque magnetometry (which mainly probes the three Dirac valley electron pockets) detected a field-induced phase transition [3]. The full understanding of the electron and hole behaviours above the quantum limit of pure Bi is therefore still under debate. In this talk, we will present our measurement of the Hall resistivity and torque magnetometry with magnetic field up to 31 T and rotating in the trigonal-bisectrix plane [4]. The Hall response is dominated by the hole pockets according to its sign as well as the period and the angular dependence of its quantum oscillations. In the vicinity of the quantum limit, it presents additional anomalies which are the fingerprints of the electron pockets. We found that for particular orientations of the magnetic field (namely ``magic angles''), the Hall response becomes field-independent within the experimental resolution around 20T. This drastic dependence of the plateaux on the field orientation provides strong constraints for theoretical scenarios. [4pt] [1] Bertrand I. Halperin, Japanese Journal of Applied Physics, 26, Supplement 26-3 (1987).[0pt] [2] Kamran Behnia, Luis Balicas, Yakov Kopelevich, Science, 317, 1729 (2008).[0pt] [3] Lu Li, J. G. Checkelsky, Y. S. Hor, C. Uher, A. F. Hebard, R. J. Cava, and N. P. Ong , Science, 321, 5888 (2008).[0pt] [4] Benoît Fauqu'e, Luis Balicas, Ilya Sheikin, Jean Paul Issi and Kamran Behnia, to be published

Anomalous Hall hysteresis in T m3F e5O12/Pt with strain-induced perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Xu, Yadong; Garay, Javier E.; Shi, Jing

2016-10-01

We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator T m3F e5O12 (TIG) films grown with pulsed laser deposition on a substituted G d3G a5O12 substrate which maximizes the tensile strain at the interface. In bilayers consisting of Pt and TIG, we observe large squared Hall hysteresis loops over a wide range of thicknesses of Pt at room temperature. When a thin Cu layer is inserted between Pt and TIG, the Hall hysteresis magnitude decays but stays finite as the thickness of Cu increases up to 5 nm. However, if the Cu layer is placed atop Pt instead, the Hall hysteresis magnitude is consistently larger than when the Cu layer with the same thickness is inserted in between for all Cu thicknesses. These results suggest that both the proximity-induced ferromagnetism and spin current contribute to the anomalous Hall effect.

A hybrid plasmonic waveguide terahertz quantum cascade laser

NASA Astrophysics Data System (ADS)

Degl'Innocenti, Riccardo; Shah, Yash D.; Wallis, Robert; Klimont, Adam; Ren, Yuan; Jessop, David S.; Beere, Harvey E.; Ritchie, David A.

2015-02-01

We present the realization of a quantum cascade laser emitting at around 2.85 THz, based on a hybrid plasmonic waveguide with a low refractive index dielectric cladding. This hybrid waveguide design allows the performance of a double-metal waveguide to be retained, while improving the emission far-field. A set of lasers based on the same active region material were fabricated with different metal layer thicknesses. A detailed characterization of the performance of these lasers revealed that there is an optimal trade-off that yields the best far-field emission and the maximum temperature of operation. By exploiting the pure plasmonic mode of these waveguides, the standard operation conditions of a double-metal quantum cascade laser were retrieved, such that the maximum operating temperature of these devices is not affected by the process. These results pave the way to realizing a class of integrated devices working in the terahertz range which could be further exploited to fabricate terahertz on-chip circuitry.

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8Ge 0.2 quantum well hetero-structure

DOE PAGES

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; ...

2018-06-04

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regionsmore » in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.« less

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8Ge 0.2 quantum well hetero-structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regionsmore » in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.« less

A hybrid plasmonic waveguide terahertz quantum cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Degl'Innocenti, Riccardo, E-mail: rd448@cam.ac.uk; Shah, Yash D.; Wallis, Robert

2015-02-23

We present the realization of a quantum cascade laser emitting at around 2.85 THz, based on a hybrid plasmonic waveguide with a low refractive index dielectric cladding. This hybrid waveguide design allows the performance of a double-metal waveguide to be retained, while improving the emission far-field. A set of lasers based on the same active region material were fabricated with different metal layer thicknesses. A detailed characterization of the performance of these lasers revealed that there is an optimal trade-off that yields the best far-field emission and the maximum temperature of operation. By exploiting the pure plasmonic mode of thesemore » waveguides, the standard operation conditions of a double-metal quantum cascade laser were retrieved, such that the maximum operating temperature of these devices is not affected by the process. These results pave the way to realizing a class of integrated devices working in the terahertz range which could be further exploited to fabricate terahertz on-chip circuitry.« less

Intrinsic quantum anomalous hall effect in a two-dimensional anilato-based lattice.

PubMed

Ni, Xiaojuan; Jiang, Wei; Huang, Huaqing; Jin, Kyung-Hwan; Liu, Feng

2018-06-13

Using first-principles calculations, we predict an intrinsic quantum anomalous Hall (QAH) state in a monolayer anilato-based metal-organic framework M2(C6O4X2)3 (M = Mn and Tc, X = F, Cl, Br and I). The spin-orbit coupling of M d orbitals opens a nontrivial band gap up to 18 meV at the Dirac point. The electron counting rule is used to explain the intrinsic nature of the QAH state. The calculated nonzero Chern number, gapless edge states and quantized Hall conductance all confirm the nontrivial topological properties in the anilato-based lattice. Our findings provide an organic materials platform for the realization of the QAH effect without the need for magnetic and charge doping, which are highly desirable for the development of low-energy-consumption spintronic devices.

Unusual Thermal Hall Effect in a Kitaev Spin Liquid Candidate α -RuCl3

NASA Astrophysics Data System (ADS)

Kasahara, Y.; Sugii, K.; Ohnishi, T.; Shimozawa, M.; Yamashita, M.; Kurita, N.; Tanaka, H.; Nasu, J.; Motome, Y.; Shibauchi, T.; Matsuda, Y.

2018-05-01

The Kitaev quantum spin liquid displays the fractionalization of quantum spins into Majorana fermions. The emergent Majorana edge current is predicted to manifest itself in the form of a finite thermal Hall effect, a feature commonly discussed in topological superconductors. Here we report on thermal Hall conductivity κx y measurements in α -RuCl3 , a candidate Kitaev magnet with the two-dimensional honeycomb lattice. In a spin-liquid (Kitaev paramagnetic) state below the temperature characterized by the Kitaev interaction JK/kB˜80 K , positive κx y develops gradually upon cooling, demonstrating the presence of highly unusual itinerant excitations. Although the zero-temperature property is masked by the magnetic ordering at TN=7 K , the sign, magnitude, and T dependence of κx y/T at intermediate temperatures follows the predicted trend of the itinerant Majorana excitations.

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

PubMed Central

Chiatti, Olivio; Riha, Christian; Lawrenz, Dominic; Busch, Marco; Dusari, Srujana; Sánchez-Barriga, Jaime; Mogilatenko, Anna; Yashina, Lada V.; Valencia, Sergio; Ünal, Akin A.; Rader, Oliver; Fischer, Saskia F.

2016-01-01

Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼1019 cm−3) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2Se3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability. PMID:27270569

Hall viscosity and geometric response in the Chern-Simons matrix model of the Laughlin states

NASA Astrophysics Data System (ADS)

Lapa, Matthew F.; Hughes, Taylor L.

2018-05-01

We study geometric aspects of the Laughlin fractional quantum Hall (FQH) states using a description of these states in terms of a matrix quantum mechanics model known as the Chern-Simons matrix model (CSMM). This model was proposed by Polychronakos as a regularization of the noncommutative Chern-Simons theory description of the Laughlin states proposed earlier by Susskind. Both models can be understood as describing the electrons in a FQH state as forming a noncommutative fluid, i.e., a fluid occupying a noncommutative space. Here, we revisit the CSMM in light of recent work on geometric response in the FQH effect, with the goal of determining whether the CSMM captures this aspect of the physics of the Laughlin states. For this model, we compute the Hall viscosity, Hall conductance in a nonuniform electric field, and the Hall viscosity in the presence of anisotropy (or intrinsic geometry). Our calculations show that the CSMM captures the guiding center contribution to the known values of these quantities in the Laughlin states, but lacks the Landau orbit contribution. The interesting correlations in a Laughlin state are contained entirely in the guiding center part of the state/wave function, and so we conclude that the CSMM accurately describes the most important aspects of the physics of the Laughlin FQH states, including the Hall viscosity and other geometric properties of these states, which are of current interest.

Optimum performance of electron beam pumped GaAs and GaN

NASA Astrophysics Data System (ADS)

Afify, M. S.; Moslem, W. M.; Hassouba, M. A.; Abu-El Hassan, A.

2018-05-01

This paper introduces a physical solution in order to overcome the damage to semiconductors, due to increasing temperature during the pumping process. For this purpose, we use quantum hydrodynamic fluid equations, including different quantum effects. This study concludes that nonlinear acoustic waves, in the form of soliton and shock-like (double layer) pulses, can propagate depending on the electron beam temperature and the streaming speed. Therefore, one can precisely tune the beam parameters in order to avoid such unfavorable noises that may lead to defects in semiconductors.

Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

PubMed Central

Maryenko, D.; Mishchenko, A. S.; Bahramy, M. S.; Ernst, A.; Falson, J.; Kozuka, Y.; Tsukazaki, A.; Nagaosa, N.; Kawasaki, M.

2017-01-01

Anomalous Hall effect, a manifestation of Hall effect occurring in systems without time-reversal symmetry, has been mostly observed in ferromagnetically ordered materials. However, its realization in high-mobility two-dimensional electron system remains elusive, as the incorporation of magnetic moments deteriorates the device performance compared to non-doped structure. Here we observe systematic emergence of anomalous Hall effect in various MgZnO/ZnO heterostructures that exhibit quantum Hall effect. At low temperatures, our nominally non-magnetic heterostructures display an anomalous Hall effect response similar to that of a clean ferromagnetic metal, while keeping a large anomalous Hall effect angle θAHE≈20°. Such a behaviour is consistent with Giovannini–Kondo model in which the anomalous Hall effect arises from the skew scattering of electrons by localized paramagnetic centres. Our study unveils a new aspect of many-body interactions in two-dimensional electron systems and shows how the anomalous Hall effect can emerge in a non-magnetic system. PMID:28300133

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.

For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15}more » layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.« less

Self-induced inverse spin-Hall effect in an iron and a cobalt single-layer films themselves under the ferromagnetic resonance

NASA Astrophysics Data System (ADS)

Kanagawa, Kazunari; Teki, Yoshio; Shikoh, Eiji

2018-05-01

The inverse spin-Hall effect (ISHE) is produced even in a "single-layer" ferromagnetic material film. Previously, the self-induced ISHE in a Ni80Fe20 film under the ferromagnetic resonance (FMR) was discovered. In this study, we observed an electromotive force (EMF) in an iron (Fe) and a cobalt (Co) single-layer films themselves under the FMR. As origins of the EMFs in the films themselves, the ISHE was main for Fe and dominant for Co, respectively 2 and 18 times larger than the anomalous Hall effect. Thus, we demonstrated the self-induced ISHE in an Fe and a Co single-layer films themselves under the FMR.

Nontrivial interplay of strong disorder and interactions in quantum spin-Hall insulators doped with dilute magnetic impurities

NASA Astrophysics Data System (ADS)

Zheng, Jun-Hui; Cazalilla, Miguel A.

2018-06-01

We investigate nonperturbatively the effect of a magnetic dopant impurity on the edge transport of a quantum spin Hall (QSH) insulator. We show that for a strongly coupled magnetic dopant located near the edge of a system, a pair of transmission antiresonances appear. When the chemical potential is on resonance, interaction effects broaden the antiresonance width with decreasing temperature, thus suppressing transport for both repulsive and moderately attractive interactions. Consequences for the recently observed QSH insulating phase of the 1 -T' of WTe2 are briefly discussed.

Composite fermion theory for bosonic quantum Hall states on lattices.

PubMed

Möller, G; Cooper, N R

2009-09-04

We study the ground states of the Bose-Hubbard model in a uniform magnetic field, motivated by the physics of cold atomic gases on lattices at high vortex density. Mapping the bosons to composite fermions (CF) leads to the prediction of quantum Hall fluids that have no counterpart in the continuum. We construct trial states for these phases and test numerically the predictions of the CF model. We establish the existence of strongly correlated phases beyond those in the continuum limit and provide evidence for a wider scope of the composite fermion approach beyond its application to the lowest Landau level.

Excitons in the Fractional Quantum Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-09-01

Quasiparticles of charge 1/m in the Fractional Quantum Hall Effect form excitons, which are collective excitations physically similar to the transverse magnetoplasma oscillations of a Wigner crystal. A variational exciton wavefunction which shows explicitly that the magnetic length is effectively longer for quasiparticles than for electrons is proposed. This wavefunction is used to estimate the dispersion relation of these excitons and the matrix elements to generate them optically out of the ground state. These quantities are then used to describe a type of nonlinear conductivity which may occur in these systems when they are relatively clean.

On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

NASA Astrophysics Data System (ADS)

Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

2017-04-01

Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

Progress towards two double-dot qubits in Si/SiGe: quadruple quantum dots

NASA Astrophysics Data System (ADS)

Foote, Ryan H.; Ward, Daniel R.; Kim, Dohun; Thorgrimsson, Brandur; Smith, Luke; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

We present the fabrication and electrical characterization of two types of gate-defined quadruple quantum dot devices formed in Si/SiGe heterostructures. We compare two designs, one which uses three layers of tightly overlapping gates and is similar to the work found in, and one which uses only two layers of gates and has significantly more open space between neighboring gates. We demonstrate charge-state conditional quantum oscillations in the more open device, we compare the tunability of both devices with each other, and we discuss the implications of these measurements on a path towards larger numbers of coupled quantum dot qubits. This work is supported in part by ARO (W911NF-12-1-0607), NSF (DMR-1206915, PHY-1104660), ONR (N00014-15-1-0029) and the Department of Defense. Development and maintenance of the growth facilities used for fabricating samples supported by DOE (DE-FG02-03ER46028). DK acknowledges support from the Korea Institute of Science and Technology Institutional Program (Project No. 2E26681). This research utilized facilities supported by the NSF (DMR-0832760, DMR-1121288).

Application of galvanomagnetic measurements in temperature range 70-300 K to MBE GaAs layers characterization

NASA Astrophysics Data System (ADS)

Wolkenberg, Andrzej; Przeslawski, Tomasz

1996-04-01

Galvanomagnetic measurements were performed on the square shaped samples after Van der Pauw and on the Hall bar at low electric fields app. 1.5 V/cm and magnetic induction app. 6 kG in order to make a comparison between the theoretical and experimental results of the temperature dependence of mobility and resistivity from 70 K to 300 K. A calculation method was obtained of the drift mobility and the Hall mobility in which the scatterings are applied: on ionized impurities, on polar optical phonons, on acoustic phonons (deformation potential), on acoustic phonons (piezoelectric potential) and on dislocations. The elaborated method transformed to a computer program allows us to fit experimental values of the resistivity and the Hall mobility to those calculated. The fitting procedure makes it possible to characterize the quality of the n-type GaAs MBE layer, i.e. the net electron concentration, whole ionized impurities concentration and dislocation density after Read space charge cylinders model. The calculations together with the measurements allow us to obtain compensation ratio value in the layer, too. The influence of the epitaxial layer thickness on layers measurements accuracy in the case of Van der Pauw square probe was investigated. It was stated that in the layers under 3 micrometer the bulk properties are strongly influenced by both surfaces. The results of measurements of the same layer using the Van der Pauw and the Hall bar structure were compared. It was stated that the Hall bar structure only could be used to obtain proper measurements results.

Effect of subband mixing on the energy levels of a hydrogenic impurity in a GaAs/Ga1-xAlxAs double quantum well in a magnetic field

NASA Astrophysics Data System (ADS)

Nguyen, N.; Ranganathan, R.; McCombe, B. D.; Rustgi, M. L.

1992-05-01

In view of the recent evidence found in favor of subband mixing in coupling of confined impurity states in doped double-quantum-well structures, a variational approach employing Gaussian trial wave functions has been used to calculate the binding energies of the ground, (1s, m=0) and first excited, (2p-, m=-1) states of a hydrogenic donor associated with the mixture of subbands of a double-GaAs quantum well coupled by a layer of Ga1-xA1xAs in the presence of a magnetic field. Two different well sizes and three different locations of the impurity, (A) at the outer edge, (B) at the center, and (C) at the inner edge of the well, are considered, and the barrier width is allowed to vary. It is found that for the structures considered here the results from the calculations using the mixture of only first (symmetric) and second (asymmetric) subbands are significantly different from those using only the lowest (symmetric) subband, especially for the intermediate barrier widths, and depend strongly on the location of the impurity in the well. These results demonstrate that subband mixing should be included in double-quantum-well structure calculations. The effect of varying the magnetic field on the binding energies is also studied. A comparison with the measurements of Ranganathan et al. [Phys. Rev. B 44, 1423 (1991)] demonstrates that the agreement is not improved when mixing of subbands higher than the lowest two is included in the calculation.

Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, C. H.; Cheng, Y. H.; Ko, C. W.

2015-10-12

This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed tomore » the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.« less

Deformed Calogero-Sutherland model and fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Atai, Farrokh; Langmann, Edwin

2017-01-01

The deformed Calogero-Sutherland (CS) model is a quantum integrable system with arbitrary numbers of two types of particles and reducing to the standard CS model in special cases. We show that a known collective field description of the CS model, which is based on conformal field theory (CFT), is actually a collective field description of the deformed CS model. This provides a natural application of the deformed CS model in Wen's effective field theory of the fractional quantum Hall effect (FQHE), with the two kinds of particles corresponding to electrons and quasi-hole excitations. In particular, we use known mathematical results about super-Jack polynomials to obtain simple explicit formulas for the orthonormal CFT basis proposed by van Elburg and Schoutens in the context of the FQHE.

Chiral Majorana fermion modes in a quantum anomalous Hall insulator-superconductor structure.

PubMed

He, Qing Lin; Pan, Lei; Stern, Alexander L; Burks, Edward C; Che, Xiaoyu; Yin, Gen; Wang, Jing; Lian, Biao; Zhou, Quan; Choi, Eun Sang; Murata, Koichi; Kou, Xufeng; Chen, Zhijie; Nie, Tianxiao; Shao, Qiming; Fan, Yabin; Zhang, Shou-Cheng; Liu, Kai; Xia, Jing; Wang, Kang L

2017-07-21

Majorana fermion is a hypothetical particle that is its own antiparticle. We report transport measurements that suggest the existence of one-dimensional chiral Majorana fermion modes in the hybrid system of a quantum anomalous Hall insulator thin film coupled with a superconductor. As the external magnetic field is swept, half-integer quantized conductance plateaus are observed at the locations of magnetization reversals, giving a distinct signature of the Majorana fermion modes. This transport signature is reproducible over many magnetic field sweeps and appears at different temperatures. This finding may open up an avenue to control Majorana fermions for implementing robust topological quantum computing. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

The effects of temperature dependent recombination rates on performance of InGaN/GaN blue superluminescent light emitting diodes

NASA Astrophysics Data System (ADS)

Moslehi Milani, N.; Mohadesi, V.; Asgari, A.

2015-07-01

The effects of temperature dependent radiative and nonradiative recombination (Shockley-Read-Hall, spontaneous radiative, and Auger coefficients) on the spectral and power characteristics of a blue multiple quantum well (MQW) superluminescent light emitting diode (SLD or SLED) have been studied. The study is based on the rate equations model, where three rate equations corresponding to MQW active region, separate confinement heterostructure (SCH) layer, and spectral density of optical power are solved self-consistently with no k-selection energy dependent gain and quasi-Fermi level functions at steady state. We have taken into account the temperature effects on Shockley-Read-Hall (SRH), spontaneous radiative, and Auger recombination in the rate equations and have investigated the effects of temperature rising from 300 K to 375 K at a fixed current density. We examine this procedure for a moderate current density and interpret the spectral radiation power and light output power diagrams. The investigation reveals that the main loss due to temperature is related to Auger coefficient.

Magnetic Reconnection and Modification of the Hall Physics Due to Cold Ions at the Magnetopause

NASA Technical Reports Server (NTRS)

Andre, M.; Li, W.; Toldeo-Redondo, S.; Khotyaintsev, Yu. V.; Vaivads, A.; Graham, D. B.; Norgren, C.; Burch, J.; Lindqvist, P.-A.; Marklund, G.;

Method of making an InAsSb/InAsSbP diode lasers

DOEpatents

Razeghi, Manijeh

1997-01-01

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

Quantum size effects on the (0001) surface of double hexagonal close packed americium

NASA Astrophysics Data System (ADS)

Gao, D.; Ray, A. K.

2007-01-01

Electronic structures of double hexagonal close-packed americium and the (0001) surface have been studied via full-potential all-electron density-functional calculations with a mixed APW+lo/LAPW basis. The electronic and geometric properties of bulk dhcp Am as well as quantum size effects in the surface energies and the work functions of the dhcp Am (0001) ultra thin films up to seven layers have been examined at nonmagnetic, ferromagnetic, and antiferromagnetic configurations with and without spin orbit coupling. The anti-ferromagnetic state including spin-orbit coupling is found to be the ground state of dhcp Am with the 5f electrons primarily localized. Our results show that both magnetic configurations and spin-orbit coupling play important roles in determining the equilibrium lattice constant, the bulk modulus as well as the localized feature of 5f electrons for dhcp Am. Our calculated equilibrium lattice constant and bulk modulus at the ground state are in good agreement with the experimental values respectively. The work function of dhcp Am (0001) 7-layer surface at the ground state is predicted to be 2.90 eV. The surface energy for dhcp Am (0001) semi-infinite surface energy at the ground state is predicted to be 0.84 J/m2. Quantum size effects are found to be more pronounced in work functions than in surface energies.

Late Quaternary to Holocene Geology, Geomorphology and Glacial History of Dawson Creek and Surrounding area, Northeast British Columbia, Canada

NASA Astrophysics Data System (ADS)

Henry, Edward Trowbridge

Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed. This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation. Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here. The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.

The non-commutative topology of two-dimensional dirty superconductors

NASA Astrophysics Data System (ADS)

De Nittis, Giuseppe; Schulz-Baldes, Hermann

2018-01-01

Non-commutative analysis tools have successfully been applied to the integer quantum Hall effect, in particular for a proof of the stability of the Hall conductance in an Anderson localization regime and of the bulk-boundary correspondence. In this work, these techniques are implemented to study two-dimensional dirty superconductors described by Bogoliubov-de Gennes Hamiltonians. After a thorough presentation of the basic framework and the topological invariants, Kubo formulas for the thermal, thermoelectric and spin Hall conductance are analyzed together with the corresponding edge currents.

Ensemble Density Functional Approach to the Quantum Hall Effect

NASA Astrophysics Data System (ADS)

Heinonen, O.

1997-03-01

The fractional quantum Hall effect (FQHE) occurs in a two-dimensional electron gas of density n when a strong magnetic field perpendicular to the plane of the electron gas takes on certain strengths B(n). At these magnetic field strengths the system is incompressible, i.e., there is a finite cost in energy for creating charge density fluctuations in the bulk. Even so the boundary of the electron gas supports gapless modes of density waves. The bulk energy gap arises because of the strong electron-electron interactions. There are very good models for infinite homogeneous systems and for the gapless excitations of the boundary of the electron gas. But in order to explain experiments on quantum Hall systems, including Hall bars and quantum dots, new approaches are needed which can accurately describe inhomogeneous systems, including Landau level mixing and the spin degree of freedom. One possibility is an ensemble density functional theory approach that we have developed.(O. Heinonen, M.I. Lubin, and M.D. Johnson, Phys. Rev. Lett. 75), 4110 (1995)(O. Heinonen, M.I. Lubin, and M.D. Johnson, Int. J. Quant. Chem, December 1996) We have applied this to study edge reconstructions of spin-polarized quantum dots. The results for a six-electron test case are in excellent agreement with numerical diagonalizations. For larger systems, compressible and incompressible strips appear as the magnetic field is increased from the region in which a dot forms a compact so-called maximum density droplet. We have recently included spin degree of freedom to study the stability of a maximum density droplet, and charge-spin textures in inhomogeneous systems. As an example, when the Zeeman coupling is decreased, we find that the maximum density droplet develops a spin-structured edge instability. This implies that the spin degree of freedom may play a significant role in the study of edge modes at low or moderate magnetic fields.

Tunnel transport and interlayer excitons in bilayer fractional quantum Hall systems

NASA Astrophysics Data System (ADS)

Zhang, Yuhe; Jain, J. K.; Eisenstein, J. P.

2017-05-01

In a bilayer system consisting of a composite-fermion (CF) Fermi sea in each layer, the tunnel current is exponentially suppressed at zero bias, followed by a strong peak at a finite-bias voltage Vmax. This behavior, which is qualitatively different from that observed for the electron Fermi sea, provides fundamental insight into the strongly correlated non-Fermi-liquid nature of the CF Fermi sea and, in particular, offers a window into the short-distance high-energy physics of this highly nontrivial state. We identify the exciton responsible for the peak current and provide a quantitative account of the value of Vmax. The excitonic attraction is shown to be quantitatively significant, and its variation accounts for the increase of Vmax with the application of an in-plane magnetic field. We also estimate the critical Zeeman energy where transition occurs from a fully spin-polarized composite-fermion Fermi sea to a partially spin-polarized one, carefully incorporating corrections due to finite width and Landau level mixing, and find it to be in satisfactory agreement with the Zeeman energy where a qualitative change has been observed for the onset bias voltage [J. P. Eisenstein et al., Phys. Rev. B 94, 125409 (2016), 10.1103/PhysRevB.94.125409]. For fractional quantum Hall states, we predict a substantial discontinuous jump in Vmax when the system undergoes a transition from a fully spin-polarized state to a spin singlet or a partially spin-polarized state.

Duality of two pairs of double-walled nanotubes consisting of S=1 and S=3/2 spins probed by means of a quantum simulation approach

NASA Astrophysics Data System (ADS)

Liu, Zhaosen; Ian, Hou

2017-01-01

Using a quantum simulation approach, we investigate in the present work the spontaneous magnetic properties of two pairs of double-walled cylindrical nanotubes consisting of different spins. Our simulated magnetic and thermodynamic properties for each pair of them are precisely identical, exhibiting a fascinating property of the nature world and demonstrating the correctness of our simulation approach. The second pair of nanotubes are frustrated, two magnetic phases of distinct spin configurations appear in the low temperature region, but only the inner layer consisting of small spins is frustrated evidently, its magnetization is considerably suppressed in the high temperature phase. Moreover, the nanosystems exhibit typical Ising-like behavior due to the uniaxial anisotropy along the z-direction, and evident finite-size effects as well.

Anionic poly(p-phenylenevinylene)/layered double hydroxide ordered ultrathin films with multiple quantum well structure: a combined experimental and theoretical study.

PubMed

Yan, Dongpeng; Lu, Jun; Ma, Jing; Wei, Min; Wang, Xinrui; Evans, David G; Duan, Xue

2010-05-18

The sulfonated phenylenevinylene polyanion derivate (APPV) and exfoliated Mg-Al-layered double hydroxide (LDH) monolayers were alternatively assembled into ordered ultrathin films (UTFs) employing a layer-by-layer method, which shows uniform yellow luminescence. UV-vis absorption and fluorescence spectroscopy present a stepwise and regular growth of the UTFs upon increasing deposited cycles. X-ray diffraction, atomic force microscopy, and scanning electron microscopy demonstrate that the UTFs are orderly periodical layered structure with a thickness of 3.3-3.5 nm per bilayer. The APPV/LDH UTFs exhibit well-defined polarized photoemission characteristic with the maximum luminescence anisotropy of approximately 0.3. Moreover, the UTF exhibit longer fluorescence lifetime (3-3.85-fold) and higher photostability than the drop-casting APPV film under UV irradiation, suggesting that the existence of a LDH monolayer enhances the optical performance of the APPV polyanion. A combination study of electrochemistry and periodic density functional theory was used to investigate the electronic structure of the APPV/LDH system, illustrating that the APPV/LDH UTF is a kind of organic-inorganic hybrid multiple quantum well (MQW) structure with a low band energy of 1.7-1.8 eV, where the valence electrons of APPV can be confined into the energy wells formed by the LDH monolayers effectively. Therefore, this work not only gives a feasible method for fabricating a luminescence ultrathin film but also provides a detailed understanding of the geometric and electronic structures of photoactive polyanions confined between the LDH monolayers.

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb) 2Te 3 film

DOE PAGES

Li, W.; Claassen, M.; Chang, Cui -Zu; ...

2016-09-07

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Diracmore » point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.« less

Microscopic model of quasiparticle wave packets in superfluids, superconductors, and paired Hall states.

PubMed

Parameswaran, S A; Kivelson, S A; Shankar, R; Sondhi, S L; Spivak, B Z

2012-12-07

We study the structure of Bogoliubov quasiparticles, bogolons, the fermionic excitations of paired superfluids that arise from fermion (BCS) pairing, including neutral superfluids, superconductors, and paired quantum Hall states. The naive construction of a stationary quasiparticle in which the deformation of the pair field is neglected leads to a contradiction: it carries a net electrical current even though it does not move. However, treating the pair field self-consistently resolves this problem: in a neutral superfluid, a dipolar current pattern is associated with the quasiparticle for which the total current vanishes. When Maxwell electrodynamics is included, as appropriate to a superconductor, this pattern is confined over a penetration depth. For paired quantum Hall states of composite fermions, the Maxwell term is replaced by a Chern-Simons term, which leads to a dipolar charge distribution and consequently to a dipolar current pattern.

What do you measure when you measure the Hall effect?

NASA Astrophysics Data System (ADS)

Koon, D. W.; Knickerbocker, C. J.

1993-02-01

A formalism for calculating the sensitivity of Hall measurements to local inhomogeneities of the sample material or the magnetic field is developed. This Hall weighting function g(x,y) is calculated for various placements of current and voltage probes on square and circular laminar samples. Unlike the resistivity weighting function, it is nonnegative throughout the entire sample, provided all probes lie at the edge of the sample. Singularities arise in the Hall weighting function near the current and voltage probes except in the case where these probes are located at the corners of a square. Implications of the results for cross, clover, and bridge samples, and the implications of our results for metal-insulator transition and quantum Hall studies are discussed.

Linear response and Berry curvature in two-dimensional topological phases

NASA Astrophysics Data System (ADS)

Bradlyn, Barry J.

In this thesis we examine the viscous and thermal transport properties of chiral topological phases, and their relationship to topological invariants. We start by developing a Kubo formalism for calculating the frequency dependent viscosity tensor of a general quantum system, both with and without a uniform external magnetic field. The importance of contact terms is emphasized. We apply this formalism to the study of integer and fractional quantum Hall states, as well as p + ip paired superfluids, and verify the relationship between the Hall viscosity and the mean orbital spin density. We also elucidate the connection between our Kubo formulas and prior adiabatic transport calculations of the Hall viscosity. Additionally, we derive a general relationship between the frequency dependent viscosity and conductivity tensors for Galilean-invariant systems. We comment on the implications of this relationship towards the measurement of Hall viscosity in solid-state systems. To address the question of thermal transport, we first review the standard Kubo formalism of Luttinger for computing thermoelectric coefficients. We apply this to the specific case of non-interacting electrons in the integer quantum Hall regime, paying careful attention to the roles of bulk and edge effects. In order to generalize our discussion to interacting systems, we construct a low-energy effective action for a two-dimensional non-relativistic topological phase of matter in a continuum, which completely describes all of its bulk thermoelectric and visco-elastic properties in the limit of low frequencies, long distances, and zero temperature, without assuming either Lorentz or Galilean invariance, by coupling the microscopic degrees of freedom to the background spacetime geometry. We derive the most general form of a local bulk induced action to first order in derivatives of the background fields, from which thermodynamic and transport properties can be obtained. We show that the gapped bulk cannot contribute to low-temperature thermoelectric transport other than the ordinary Hall conductivity; the other thermoelectric effects (if they occur) are thus purely edge effects. The stress response to time-dependent strains is given by the Hall viscosity, which is robust against perturbations and related to the spin current. Finally, we address the issue of calculating the topological central charge from bulk wavefunctions for a topological phase. Using the form of the topological terms in the induced action, we show that we can calculate the various coefficients of these terms as Berry curvatures associated to certain metric and electromagnetic vector potential perturbations. We carry out this computation explicitly for quantum Hall trial wavefunctions that can be represented as conformal blocks in a chiral conformal field theory (CFT). These calculations make use of the gauge and gravitational anomalies in the underlying chiral CFT.

Pt thickness dependence of spin Hall effect switching of in-plane magnetized CoFeB free layers studied by differential planar Hall effect

NASA Astrophysics Data System (ADS)

Mihajlović, G.; Mosendz, O.; Wan, L.; Smith, N.; Choi, Y.; Wang, Y.; Katine, J. A.

2016-11-01

We introduce a differential planar Hall effect method that enables the experimental study of spin orbit torque switching of in-plane magnetized free layers in a simple Hall bar device geometry. Using this method, we study the Pt thickness dependence of switching currents and show that they decrease monotonically down to the minimum experimental thickness of ˜5 nm, while the critical current and power densities are very weakly thickness dependent, exhibiting the minimum values of Jc0 = 1.1 × 108 A/cm2 and ρJc0 2=0.6 ×1012 W/cm 3 at this minimum thickness. Our results suggest that a significant reduction of the critical parameters could be achieved by optimizing the free layer magnetics, which makes this technology a viable candidate for fast, high endurance and low-error rate applications such as cache memories.

Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices

NASA Astrophysics Data System (ADS)

King, Cameron; Schoenfield, Joshua; Calderón, M. J.; Koiller, Belita; Saraiva, André; Hu, Xuedong; Jiang, Hong-Wen; Friesen, Mark; Coppersmith, S. N.

Fabricating quantum dots in silicon metal-oxide-semiconductor (MOS) for quantum information processing applications is attractive because of the long spin coherence times in silicon and the potential for leveraging the massive investments that have been made for scaling of the technology for classical electronics. One obstacle that has impeded the development of electrically gated MOS singlet-triplet qubits is the lack of observed spin blockade, where the tunneling of a second electron into a dot is fast when the two-electron state is a singlet and slow when the two-electron state is a triplet, even in samples with large singlet-triplet energy splittings. We show that this is a commonly exhibited problem in MOS double quantum dots, and present evidence that the cause is stray positive charges in the oxide layer inducing accidental dots near the device's active region that allow spin blockade lifting. This work was supported by ARO (W911NF-12-1-0607), NSF (IIA-1132804), the Department of Defense under Contract No. H98230-15-C 0453, ARO (W911NF-14-1-0346), NSF (OISE-1132804), ONR (N00014-15-1-0029), and ARO (W911NF-12-R-0012).

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seed layer

NASA Astrophysics Data System (ADS)

Hu, Fang; Xu, Guizhou; You, Yurong; Zhang, Zhi; Xu, Zhan; Gong, Yuanyuan; Liu, Er; Zhang, Hongguo; Liu, Enke; Wang, Wenhong; Xu, Feng

2018-03-01

Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in antiferromagnetic spintronic devices. Herein, we report the preparation of Mn3Ga films in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on a thermally oxidized Si substrate. Large coercivity together with large anomalous Hall resistivity is found in the Ta-only sample with a mixed tetragonal phase. By increasing the thickness of the Ru layer, the tetragonal phase gradually disappears and a relatively pure hexagonal phase is obtained in the Ta(5)/Ru(30) buffered sample. Further magnetic and transport measurements revealed that the anomalous Hall conductivity nearly vanishes in the pure hexagonal sample, while an abnormal asymmetric hump structure emerges in the low field region. The extracted additional Hall term is robust in a large temperature range and presents a sign reversal above 200 K. The abnormal Hall properties are proposed to be closely related to the frustrated spin structure of D019 Mn3Ga.

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.

PubMed

Park, Jeongmin; Kang, Haeyong; Kang, Kyeong Tae; Yun, Yoojoo; Lee, Young Hee; Choi, Woo Seok; Suh, Dongseok

2016-03-09

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

Shubnikov-de Haas quantum oscillations reveal a reconstructed Fermi surface near optimal doping in a thin film of the cuprate superconductor Pr 1.86 Ce 0.14 CuO 4 ± δ

DOE PAGES

Breznay, Nicholas P.; Hayes, Ian M.; Ramshaw, B. J.; ...

2016-09-16

In this work, we study magnetotransport properties of the electron-doped superconductor Pr 2-xCe xCuO 4±δ with x = 0.14 in magnetic fields up to 92 T, and observe Shubnikov-de Haas magnetic quantum oscillations. The oscillations display a single frequency F = 255 ± 10 T, indicating a small Fermi pocket that is ~1 % of the two-dimensional Brillouin zone and consistent with a Fermi surface reconstructed from the large holelike cylinder predicted for these layered materials. Despite the low nominal doping, all electronic properties including the effective mass and Hall effect are consistent with overdoped compounds. In conclusion, our studymore » demonstrates that the exceptional chemical control afforded by high quality thin films will enable Fermi surface studies deep into the overdoped cuprate phase diagram.« less

Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells

NASA Astrophysics Data System (ADS)

Łepkowski, Sławomir P.; Bardyszewski, Witold

2017-05-01

We study theoretically the topological phase transition and the Rashba spin-orbit interaction in electrically biased InN/GaN quantum wells. We show that that for properly chosen widths of quantum wells and barriers, one can effectively tune the system through the topological phase transition applying an external electric field perpendicular to the QW plane. We find that in InN/GaN quantum wells with the inverted band structure, when the conduction band s-type level is below the heavy hole and light hole p-type levels, the spin splitting of the subbands decreases with increasing the amplitude of the electric field in the quantum wells, which reveals the anomalous Rashba effect. Derived effective Rashba Hamiltonians can describe the subband spin splitting only for very small wave vectors due to strong coupling between the subbands. Furthermore, we demonstrate that for InN/GaN quantum wells in a Hall bar geometry, the critical voltage for the topological phase transition depends distinctly on the width of the structure and a significant spin splitting of the edge states lying in the 2D band gap can be almost switched off by increasing the electric field in quantum wells only by a few percent. We show that the dependence of the spin splitting of the upper branch of the edge state dispersion curve on the wave vector has a threshold-like behavior with the on/off spin splitting ratio reaching two orders of magnitude for narrow Hall bars. The threshold wave vector depends weakly on the Hall bar width, whereas it increases significantly with the bias voltage due to an increase of the energetic distance between the s-type and p-type quantum well energy levels and a reduction of the coupling between the subbands.

Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells.

PubMed

Łepkowski, Sławomir P; Bardyszewski, Witold

2017-05-17

We study theoretically the topological phase transition and the Rashba spin-orbit interaction in electrically biased InN/GaN quantum wells. We show that that for properly chosen widths of quantum wells and barriers, one can effectively tune the system through the topological phase transition applying an external electric field perpendicular to the QW plane. We find that in InN/GaN quantum wells with the inverted band structure, when the conduction band s-type level is below the heavy hole and light hole p-type levels, the spin splitting of the subbands decreases with increasing the amplitude of the electric field in the quantum wells, which reveals the anomalous Rashba effect. Derived effective Rashba Hamiltonians can describe the subband spin splitting only for very small wave vectors due to strong coupling between the subbands. Furthermore, we demonstrate that for InN/GaN quantum wells in a Hall bar geometry, the critical voltage for the topological phase transition depends distinctly on the width of the structure and a significant spin splitting of the edge states lying in the 2D band gap can be almost switched off by increasing the electric field in quantum wells only by a few percent. We show that the dependence of the spin splitting of the upper branch of the edge state dispersion curve on the wave vector has a threshold-like behavior with the on/off spin splitting ratio reaching two orders of magnitude for narrow Hall bars. The threshold wave vector depends weakly on the Hall bar width, whereas it increases significantly with the bias voltage due to an increase of the energetic distance between the s-type and p-type quantum well energy levels and a reduction of the coupling between the subbands.

Pilot study: Exposure and materiality of the secondary room and its impact in the impulse response of coupled-volume concert halls

NASA Astrophysics Data System (ADS)

Ermann, Michael; Johnson, Marty E.

2002-05-01

What does one room sound like when it is partially exposed to another (acoustically coupled)? More specifically, this research aims to quantify how operational and design decisions impact aural impressions in the design of concert halls with acoustical coupling. By adding a second room to a concert hall, and designing doors to control the sonic transparency between the two rooms, designers can create a new, coupled acoustic. Concert halls use coupling to achieve a variable, longer, and distinct reverberant quality for their musicians and listeners. For this study, a coupled-volume shoebox concert hall was conceived with a fixed geometric volume, form, and primary-room sound absorption. Aperture size and secondary-room sound-absorption levels were established as variables. Statistical analysis of sound decay in this simulated hall suggests a highly sensitive relationship between the double-sloped condition and (1) Architectural composition, as defined by the aperture size exposing the chamber and (2) Materiality, as defined by the sound absorbance in the coupled volume. Preliminary calculations indicate that the double-sloped sound decay condition only appears when the total aperture area is less than 1.5% of the total shoebox surface area and the average absorption coefficient of the coupled volume is less than 0.07.

Covariant effective action for a Galilean invariant quantum Hall system

NASA Astrophysics Data System (ADS)

Geracie, Michael; Prabhu, Kartik; Roberts, Matthew M.

2016-09-01

We construct effective field theories for gapped quantum Hall systems coupled to background geometries with local Galilean invariance i.e. Bargmann spacetimes. Along with an electromagnetic field, these backgrounds include the effects of curved Galilean spacetimes, including torsion and a gravitational field, allowing us to study charge, energy, stress and mass currents within a unified framework. A shift symmetry specific to single constituent theories constraints the effective action to couple to an effective background gauge field and spin connection that is solved for by a self-consistent equation, providing a manifestly covariant extension of Hoyos and Son's improvement terms to arbitrary order in m.

Geometric Defects in Quantum Hall States

NASA Astrophysics Data System (ADS)

Gromov, Andrey

I will describe a geometric analogue of Laughlin quasiholes in fractional quantum Hall (FQH) states. These ``quasiholes'' are generated by an insertion of quantized fluxes of curvature - which can be modeled by branch points of a certain Riemann surface - and, consequently, are related to genons. Unlike quasiholes, the genons are not excitations, but extrinsic defects. Fusion of genons describes the response of an FQH state to a process that changes (effective) topology of the physical space. These defects are abelian for IQH states and non-abelian for FQH states. I will explain how to calculate an electric charge, geometric spin and adiabatic mutual statistics of the these defects. Leo Kadanoff Fellowship.

Two-terminal conductance fluctuations in the integer quantum Hall regime

NASA Astrophysics Data System (ADS)

Ho, Chang-Ming

1999-09-01

Motivated by recent experiments on the conductance fluctuations in mesoscopic integer quantum Hall systems, we consider a model in which the Coulomb interactions are incorporated into the picture of edge-state transport through a single saddle point. The occupancies of classical localized states in the two-dimensional electron system change due to the interactions between electrons when the gate voltage on top of the device is varied. The electrostatic potential between the localized states and the saddle point causes fluctuations of the saddle-point potential and thus fluctuations of the transmission probability of edge states. This simple model is studied numerically and compared with the observation.

Unconventional fractional quantum Hall effect in monolayer and bilayer graphene

PubMed Central

Jacak, Janusz; Jacak, Lucjan

2016-01-01

The commensurability condition is applied to determine the hierarchy of fractional fillings of Landau levels in monolayer and in bilayer graphene. The filling rates for fractional quantum Hall effect (FQHE) in graphene are found in the first three Landau levels in one-to-one agreement with the experimental data. The presence of even denominator filling fractions in the hierarchy for FQHE in bilayer graphene is explained. Experimentally observed hierarchy of FQHE in the first and second Landau levels in monolayer graphene and in the zeroth Landau level in bilayer graphene is beyond the conventional composite fermion interpretation but fits to the presented nonlocal topology commensurability condition. PMID:27877866

Fluctuations and instabilities of a holographic metal

NASA Astrophysics Data System (ADS)

Jokela, Niko; Järvinen, Matti; Lippert, Matthew

2013-02-01

We analyze the quasinormal modes of the D2-D8' model of 2+1-dimensional, strongly-coupled, charged fermions in a background magnetic field and at non-zero density. The model is known to include a quantum Hall phase with integer filling fraction. As expected, we find a hydrodynamical diffusion mode at small momentum and the nonzero-temperature holographic zero sound, which becomes massive above a critical magnetic field. We confirm the previously-known thermodynamic instability. In addition, we discover an instability at low temperature, large mass, and in a charge density and magnetic field range near the quantum Hall phase to an inhomogeneous striped phase.

Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

NASA Astrophysics Data System (ADS)

Schopfer, F.; Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.

Large-area and high-quality graphene devices synthesized by CVD on SiC are used to develop reliable electrical resistance standards, based on the quantum Hall effect (QHE), with state-of-the-art accuracy of 1x10-9 and under an extended range of experimental conditions of magnetic field (down to 3.5 T), temperature (up to 10 K) or current (up to 0.5 mA). These conditions are much relaxed as compared to what is required by GaAs/AlGaAs standards and will enable to broaden the use of the primary quantum electrical standards to the benefit of Science and Industry for electrical measurements. Furthermore, by comparison of these graphene devices with GaAs/AlGaAs standards, we demonstrate the universality of the QHE within an ultimate uncertainty of 8.2x10-11. This suggests the exact relation of the quantized Hall resistance with the Planck constant and the electron charge, which is crucial for the new SI to be based on fixing such fundamental constants. These results show that graphene realizes its promises and demonstrates its superiority over other materials for a demanding application. Nature Nanotech. 10, 965-971, 2015, Nature Commun. 6, 6806, 2015

Spectral sum rules and magneto-roton as emergent graviton in fractional quantum Hall effect

DOE PAGES

Golkar, Siavash; Nguyen, Dung X.; Son, Dam T.

2016-01-05

Here, we consider gapped fractional quantum Hall states on the lowest Landau level when the Coulomb energy is much smaller than the cyclotron energy. We introduce two spectral densities, ρ T(ω) andmore » $$\\bar{p}$$ T(ω), which are proportional to the probabilities of absorption of circularly polarized gravitons by the quantum Hall system. We prove three sum rules relating these spectral densities with the shift S, the q 4 coefficient of the static structure factor S 4, and the high-frequency shear modulus of the ground state μ ∞, which is precisely defined. We confirm an inequality, first suggested by Haldane, that S 4 is bounded from below by |S–1|/8. The Laughlin wavefunction saturates this bound, which we argue to imply that systems with ground state wavefunctions close to Laughlin’s absorb gravitons of predominantly one circular polarization. We consider a nonlinear model where the sum rules are saturated by a single magneto-roton mode. In this model, the magneto-roton arises from the mixing between oscillations of an internal metric and the hydrodynamic motion. Implications for experiments are briefly discussed.« less

Fractional charge and inter-Landau-level states at points of singular curvature.

PubMed

Biswas, Rudro R; Son, Dam Thanh

2016-08-02

The quest for universal properties of topological phases is fundamentally important because these signatures are robust to variations in system-specific details. Aspects of the response of quantum Hall states to smooth spatial curvature are well-studied, but challenging to observe experimentally. Here we go beyond this prevailing paradigm and obtain general results for the response of quantum Hall states to points of singular curvature in real space; such points may be readily experimentally actualized. We find, using continuum analytical methods, that the point of curvature binds an excess fractional charge and sequences of quantum states split away, energetically, from the degenerate bulk Landau levels. Importantly, these inter-Landau-level states are bound to the topological singularity and have energies that are universal functions of bulk parameters and the curvature. Our exact diagonalization of lattice tight-binding models on closed manifolds demonstrates that these results continue to hold even when lattice effects are significant. An important technological implication of these results is that these inter-Landau-level states, being both energetically and spatially isolated quantum states, are promising candidates for constructing qubits for quantum computation.

Applications of quantum measurement techniques: Counterfactual quantum computation, spin hall effect of light, and atomic-vapor-based photon detectors

NASA Astrophysics Data System (ADS)

Hosten, Onur

This dissertation investigates several physical phenomena in atomic and optical physics, and quantum information science, by utilizing various types and techniques of quantum measurements. It is the deeper concepts of these measurements, and the way they are integrated into the seemingly unrelated topics investigated, which binds together the research presented here. The research comprises three different topics: Counterfactual quantum computation, the spin Hall effect of light, and ultra-high-efficiency photon detectors based on atomic vapors. Counterfactual computation entails obtaining answers from a quantum computer without actually running it, and is accomplished by preparing the computer as a whole into a superposition of being activated and not activated. The first experimental demonstration is presented, including the best performing implementation of Grover's quantum search algorithm to date. In addition, we develop new counterfactual computation protocols that enable unconditional and completely deterministic operation. These methods stimulated a debate in the literature, on the meaning of counterfactuality in quantum processes, which we also discuss. The spin Hall effect of light entails tiny spin-dependent displacements, unsuspected until 2004, of a beam of light when it changes propagation direction. The first experimental demonstration of the effect during refraction at an air-glass interface is presented, together with a novel enabling metrological tool relying on the concepts of quantum weak measurements. Extensions of the effect to smoothly varying media are also presented, along with utilization of a time-varying version of the weak measurement techniques. Our approach to ultra-high-efficiency photon detection develops and extends a recent novel non-solid-state scheme for photo-detection based on atomic vapors. This approach is in principle capable of resolving the number of photons in a pulse, can be extended to non-destructive detection of photons, and most importantly is proposed to operate with single-photon detection efficiencies exceeding 99%, ideally without dark counts. Such a detector would have tremendous implications, e.g., for optical quantum information processing. The feasibility of operation of this approach at the desired level is studied theoretically and several promising physical systems are investigated.

OPTICS. Quantum spin Hall effect of light.

PubMed

Bliokh, Konstantin Y; Smirnova, Daria; Nori, Franco

2015-06-26

Maxwell's equations, formulated 150 years ago, ultimately describe properties of light, from classical electromagnetism to quantum and relativistic aspects. The latter ones result in remarkable geometric and topological phenomena related to the spin-1 massless nature of photons. By analyzing fundamental spin properties of Maxwell waves, we show that free-space light exhibits an intrinsic quantum spin Hall effect—surface modes with strong spin-momentum locking. These modes are evanescent waves that form, for example, surface plasmon-polaritons at vacuum-metal interfaces. Our findings illuminate the unusual transverse spin in evanescent waves and explain recent experiments that have demonstrated the transverse spin-direction locking in the excitation of surface optical modes. This deepens our understanding of Maxwell's theory, reveals analogies with topological insulators for electrons, and offers applications for robust spin-directional optical interfaces. Copyright © 2015, American Association for the Advancement of Science.

Resistively detected NMR line shapes in a quasi-one-dimensional electron system

NASA Astrophysics Data System (ADS)

Fauzi, M. H.; Singha, A.; Sahdan, M. F.; Takahashi, M.; Sato, K.; Nagase, K.; Muralidharan, B.; Hirayama, Y.

2017-06-01

We observe variation in the resistively detected nuclear magnetic resonance (RDNMR) line shapes in quantum Hall breakdown. The breakdown occurs locally in a gate-defined quantum point contact (QPC) region. Of particular interest is the observation of a dispersive line shape occurring when the bulk two-dimensional electron gas (2DEG) set to νb=2 and the QPC filling factor to the vicinity of νQPC=1 , strikingly resemble the dispersive line shape observed on a 2D quantum Hall state. This previously unobserved line shape in a QPC points to a simultaneous occurrence of two hyperfine-mediated spin flip-flop processes within the QPC. Those events give rise to two different sets of nuclei polarized in the opposite direction and positioned at a separate region with different degrees of electronic spin polarization.

On-Chip Microwave Quantum Hall Circulator

NASA Astrophysics Data System (ADS)

Mahoney, A. C.; Colless, J. I.; Pauka, S. J.; Hornibrook, J. M.; Watson, J. D.; Gardner, G. C.; Manfra, M. J.; Doherty, A. C.; Reilly, D. J.

2017-01-01

Circulators are nonreciprocal circuit elements that are integral to technologies including radar systems, microwave communication transceivers, and the readout of quantum information devices. Their nonreciprocity arises from the interference of microwaves over the centimeter scale of the signal wavelength, in the presence of bulky magnetic media that breaks time-reversal symmetry. Here, we realize a completely passive on-chip microwave circulator with size 1 /1000 th the wavelength by exploiting the chiral, "slow-light" response of a two-dimensional electron gas in the quantum Hall regime. For an integrated GaAs device with 330 μ m diameter and about 1-GHz center frequency, a nonreciprocity of 25 dB is observed over a 50-MHz bandwidth. Furthermore, the nonreciprocity can be dynamically tuned by varying the voltage at the port, an aspect that may enable reconfigurable passive routing of microwave signals on chip.

Scaling in Plateau-to-Plateau Transition: A Direct Connection of Quantum Hall Systems with the Anderson Localization Model

NASA Astrophysics Data System (ADS)

Li, Wanli; Vicente, C. L.; Xia, J. S.; Pan, W.; Tsui, D. C.; Pfeiffer, L. N.; West, K. W.

2009-05-01

The quantum Hall-plateau transition was studied at temperatures down to 1 mK in a random alloy disordered high mobility two-dimensional electron gas. A perfect power-law scaling with κ=0.42 was observed from 1.2 K down to 12 mK. This perfect scaling terminates sharply at a saturation temperature of Ts˜10mK. The saturation is identified as a finite-size effect when the quantum phase coherence length (Lϕ∝T-p/2) reaches the sample size (W) of millimeter scale. From a size dependent study, Ts∝W-1 was observed and p=2 was obtained. The exponent of the localization length, determined directly from the measured κ and p, is ν=2.38, and the dynamic critical exponent z=1.

ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitkalov, Sergey A.; Bowers, C. Russell; Simmons, Jerry A.

2000-02-15

This paper presents a study of the enhancement of the Zeeman energy of two-dimensional (2D) conduction electrons near the {nu}=1 filling factor of the quantum Hall effect by optical dynamic nuclear polarization. The change in the Zeeman energy is determined from the Overhauser shift of the transport detected electron spin resonance in GaAs/Al{sub x}Ga{sub 1-x}As multiquantum wells. In a separate experiment the NMR signal enhancement factor is obtained by radio frequency detected nuclear magnetic resonance under similar conditions in the same sample. These measurements afford an estimation of the hyperfine coupling constant between the nuclei and 2D conduction electrons. (c)more » 2000 The American Physical Society.« less

Wide gap Chern Mott insulating phases achieved by design

NASA Astrophysics Data System (ADS)

Guo, Hongli; Gangopadhyay, Shruba; Köksal, Okan; Pentcheva, Rossitza; Pickett, Warren E.

2017-12-01

Quantum anomalous Hall insulators, which display robust boundary charge and spin currents categorized in terms of a bulk topological invariant known as the Chern number (Thouless et al Phys. Rev. Lett. 49, 405-408 (1982)), provide the quantum Hall anomalous effect without an applied magnetic field. Chern insulators are attracting interest both as a novel electronic phase and for their novel and potentially useful boundary charge and spin currents. Honeycomb lattice systems such as we discuss here, occupied by heavy transition-metal ions, have been proposed as Chern insulators, but finding a concrete example has been challenging due to an assortment of broken symmetry phases that thwart the topological character. Building on accumulated knowledge of the behavior of the 3d series, we tune spin-orbit and interaction strength together with strain to design two Chern insulator systems with bandgaps up to 130 meV and Chern numbers C = -1 and C = 2. We find, in this class, that a trade-off between larger spin-orbit coupling and strong interactions leads to a larger gap, whereas the stronger spin-orbit coupling correlates with the larger magnitude of the Hall conductivity. Symmetry lowering in the course of structural relaxation hampers obtaining quantum anomalous Hall character, as pointed out previously; there is only mild structural symmetry breaking of the bilayer in these robust Chern phases. Recent growth of insulating, magnetic phases in closely related materials with this orientation supports the likelihood that synthesis and exploitation will follow.

Competing ν = 5/2 fractional quantum Hall states in confined geometry.

PubMed

Fu, Hailong; Wang, Pengjie; Shan, Pujia; Xiong, Lin; Pfeiffer, Loren N; West, Ken; Kastner, Marc A; Lin, Xi

2016-11-01

Some theories predict that the filling factor 5/2 fractional quantum Hall state can exhibit non-Abelian statistics, which makes it a candidate for fault-tolerant topological quantum computation. Although the non-Abelian Pfaffian state and its particle-hole conjugate, the anti-Pfaffian state, are the most plausible wave functions for the 5/2 state, there are a number of alternatives with either Abelian or non-Abelian statistics. Recent experiments suggest that the tunneling exponents are more consistent with an Abelian state rather than a non-Abelian state. Here, we present edge-current-tunneling experiments in geometrically confined quantum point contacts, which indicate that Abelian and non-Abelian states compete at filling factor 5/2. Our results are consistent with a transition from an Abelian state to a non-Abelian state in a single quantum point contact when the confinement is tuned. Our observation suggests that there is an intrinsic non-Abelian 5/2 ground state but that the appropriate confinement is necessary to maintain it. This observation is important not only for understanding the physics of the 5/2 state but also for the design of future topological quantum computation devices.

Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Pan, W.; Klem, J. F.; Kim, J. K.; Thalakulam, M.; Cich, M. J.; Lyo, S. K.

2013-03-01

We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e2 / h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Electron transport shows noisy behavior around the CNP at extremely high B fields. When the diagonal conductivity σxx is plotted against the Hall conductivity σxy, a conductivity circle law is discovered, suggesting a chaotic quantum transport behavior. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Signatures of Fractional Exclusion Statistics in the Spectroscopy of Quantum Hall Droplets

NASA Astrophysics Data System (ADS)

Cooper, Nigel

2015-05-01

One of the most dramatic features of strongly correlated phases is the emergence of quasiparticle excitations with unconventional quantum statistics. The archetypal example is the fractional, ``anyonic,'' quantum statistics predicted for quasiparticles of the fractional quantum Hall phases. While experiments on semiconductor devices have shown that these quasiparticles have fractional charges, a direct observation of the fractional statistics has remained lacking. In this talk I shall show how precision spectroscopy measurements of rotating droplets of ultracold atoms might be used to demonstrate the Haldane fractional exclusion statistics of quasiholes in the Laughlin state of bosons. The characteristic signatures appear in the single-particle excitation spectrum. I shall show that the transitions are governed by a ``many-body selection rule'' which allows one to relate the number of allowed transitions to the number of quasihole states. I shall illustrate the theory with numerically exact simulations of small numbers of particles. Work in collaboration with Steven H. Simon, and supported by the EPSRC and the Royal Society.

Contribution of Dielectric Screening to the Total Capacitance of Few-Layer Graphene Electrodes.

PubMed

Zhan, Cheng; Jiang, De-en

2016-03-03

We apply joint density functional theory (JDFT), which treats the electrode/electrolyte interface self-consistently, to an electric double-layer capacitor (EDLC) based on few-layer graphene electrodes. The JDFT approach allows us to quantify a third contribution to the total capacitance beyond quantum capacitance (CQ) and EDL capacitance (CEDL). This contribution arises from the dielectric screening of the electric field by the surface of the few-layer graphene electrode, and we therefore term it the dielectric capacitance (CDielec). We find that CDielec becomes significant in affecting the total capacitance when the number of graphene layers in the electrode is more than three. Our investigation sheds new light on the significance of the electrode dielectric screening on the capacitance of few-layer graphene electrodes.

Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N.; Dresselhaus, M. S.

2015-02-01

The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18-600 nm) of p-type topological insulator Bi2Te3 thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18-100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi2Te3 quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi2Te3 and are inherent to topological insulators.

Method of making an InAsSb/InAsSbP diode lasers

DOEpatents

Razeghi, M.

1997-08-19

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.

Synthesis and characterization of graphene quantum dots/CoNiAl-layered double-hydroxide nanocomposite: Application as a glucose sensor.

PubMed

Samuei, Sara; Fakkar, Jila; Rezvani, Zolfaghar; Shomali, Ashkan; Habibi, Biuck

2017-03-15

In the present work, a novel nanocomposite based on the graphene quantum dots and CoNiAl-layered double-hydroxide was successfully synthesized by co-precipitation method. To achieve the morphological, structural and compositional information, the resulted nanocomposite was characterized by scanning electron microscopy X-ray diffraction, thermal gravimetric analysis, Fourier transform infrared spectroscopy, and photoluminescence. Then, the nanocomposite was used as a modifier to fabricate a modified carbon paste electrode as a non-enzymatic sensor for glucose determination. Electrochemical behavior and determination of glucose at the nanocomposite modified carbon paste electrode were investigated by cyclic voltammetry and chronoamperometry methods, respectively. The prepared sensor offered good electrocatalytic properties, fast response time, high reproducibility and stability. At the optimum conditions, the constructed sensor exhibits wide linear range; 0.01-14.0 mM with a detection limit of 6 μM (S/N = 3) and high sensitivity of 48.717 μAmM -1 . Finally, the sensor was successfully applied to determine the glucose in real samples which demonstrated its applicability. Copyright © 2017 Elsevier Inc. All rights reserved.

Aperture size, materiality of the secondary room, and listener location: Impact on the simulated impulse response of a coupled-volume concert hall

NASA Astrophysics Data System (ADS)

Ermann, Michael; Johnson, Marty E.; Harrison, Byron W.

2002-11-01

By adding a second room to a concert hall, and designing doors to control the sonic transparency between the two rooms, designers can create a new, coupled acoustic. Concert halls use coupling to achieve a variable, longer, and distinct reverberant quality for their musicians and listeners. For this study, a coupled-volume concert hall based on an existing performing arts center is conceived and computer modeled. It has a fixed geometric volume, form, and primary-room sound absorption. Ray-tracing software simulates impulse responses, varying both aperture size and secondary-room sound-absorption level, across a grid of receiver (listener) locations. The results are compared with statistical analysis that suggests a highly sensitive relationship between the double-sloped condition and the architecture of the space. This line of study aims to quantitatively and spatially correlate the double-sloped condition with (1) aperture size exposing the chamber, (2) sound absorptance in the coupled volume, and (3) listener location.

Aperture size, materiality of the secondary room and listener location: Impact on the simulated impulse response of a coupled-volume concert hall

NASA Astrophysics Data System (ADS)

Ermann, Michael; Johnson, Marty E.; Harrison, Byron W.

2003-04-01

By adding a second room to a concert hall, and designing doors to control the sonic transparency between the two rooms, designers can create a new, coupled acoustic. Concert halls use coupling to achieve a variable, longer and distinct reverberant quality for their musicians and listeners. For this study, a coupled-volume concert hall based on an existing performing arts center is conceived and computer-modeled. It has a fixed geometric volume, form and primary-room sound absorption. Ray-tracing software simulates impulse responses, varying both aperture size and secondary-room sound absorption level, across a grid of receiver (listener) locations. The results are compared with statistical analysis that suggests a highly sensitive relationship between the double-sloped condition and the architecture of the space. This line of study aims to quantitatively and spatially correlate the double-sloped condition with (1) aperture size exposing the chamber, (2) sound absorptance in the coupled volume, and (3) listener location.

The Development of Plasma Thrusters and Its Importance for Space Technology and Science Education at University of Brasilia

NASA Astrophysics Data System (ADS)

Ferreira, Jose Leonardo; Calvoso, Lui; Gessini, Paolo; Ferreira, Ivan

Since 2004 The Plasma Physics Laboratory of University of Brasilia (Brazil) is developing Hall Plasma Thurusters for Satellite station keeping and orbit control. The project is supported by CNPq, CAPES, FAP DF and from The Brazillian Space Agency-AEB. The project is part of The UNIESPAÇO Program for Space Activities Development in Brazillian Universities. In this work we are going to present the highlights of this project together with its vital contribution to include University of Brasilia in the Brazillian Space Program. Electric propulsion has already shown, over the years, its great advantages in being used as main and secondary thruster system of several space mission types. Between the many thruster concepts, one that has more tradition in flying real spacecraft is the Hall Effect Thruster (HET). These thrusters, first developed by the USSR in the 1960s, uses, in the traditional design, the radial magnetic field and axial electric field to trap electrons, ionize the gas and accelerate the plasma to therefore generate thrust. In contrast to the usual solution of using electromagnets to generate the magnetic field, the research group of the Plasma Physics Laboratory of University of Brasília has been working to develop new models of HETs that uses combined permanent magnets to generate the necessary magnetic field, with the main objective of saving electric power in the final system design. Since the beginning of this research line it was developed and implemented two prototypes of the Permanent Magnet Hall Thruster (PMHT). The first prototype, called P-HALL1, was successfully tested with the using of many diagnostics instruments, including, RF probe, Langmuir probe, Ion collector and Ion energy analyzer. The second prototype, P-HALL2, is currently under testing, and it’s planned the increasing of the plasma diagnostics and technology analysis, with the inclusion of a thrust balance, mass spectroscopy and Doppler broadening. We are also developing an Helicon Double Layer Thruster based on plasma expiation along diverging magnetic field lines within similar conditons that can be met in auroral plasma formation. HDLT is sometimes called an Auroral thruster because during the plasma expiation in the cusped magnetic field a current free double layer is formed accelerating ions and a supersonic ion beam. The development fo this type of thruster are been made in several laboratories around the world and tis application for high specific impulce space mission in the solar system is foreseen. Since the beginning of this project we have about 20 undergraduate students working at the laboratory as junior scientist with CNPq schollarships for Scientific Initiation Program called PIBIC. More than 10 graduate students were involved in master and doctoral thesis work related to space science and technology problems concerning the application of plasma space propulsion for satellite and spacecrafts for solar system missions.

Use of XPS to clarify the Hall coefficient sign variation in thin niobium layers buried in silicon

NASA Astrophysics Data System (ADS)

Demchenko, Iraida N.; Lisowski, Wojciech; Syryanyy, Yevgen; Melikhov, Yevgen; Zaytseva, Iryna; Konstantynov, Pavlo; Chernyshova, Maryna; Cieplak, Marta Z.

2017-03-01

Si/Nb/Si trilayers formed with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were prepared by magnetron sputtering and studied using XPS depth-profile techniques in order to investigate the change of Hall coefficient sign with thickness. The analysis of high-resolution (HR) XPS spectra revealed that the thicker layer sample has sharp top interface and metallic phase of niobium, thus holes dominate the transport. In contrast, the analysis indicates that the thinner layer sample has a Nb-rich mixed alloy formation at the top interface. The authors suggest that the main effect leading to a change of sign of the Hall coefficient for the thinner layer sample (which is negative contrary to the positive sign for the thicker layer sample) may be related to strong boundary scattering enhanced by the presence of silicon ions in the layer close to the interface/s. The depth-profile reconstruction was performed by SESSA software tool confirming that it can be reliably used for quantitative analysis/interpretation of experimental XPS data.

New International Reference Standards of Voltage and Resistance.

ERIC Educational Resources Information Center

Sirvastava, V. P.

1991-01-01

The introduction of the quantum standards of resistance and voltage, based on the Quantum Hall Effect (QHE) and the Josephson Effect, can be used to establish highly reproducible and uniform representations of the ohm and volt worldwide. Discussed are the QHE and the Josephson Effect. (KR)

Tunable dielectric response, resistive switching, and unconventional transport in SrTiO3

NASA Astrophysics Data System (ADS)

Mikheev, Evgeny

The first section of this thesis discusses integration of SR TiO3 grown by molecular beam epitaxy (MBE) in vertical device structures. One target application is as a tunable dielectric. Parallel plate capacitors based on epitaxial Pt(001) bottom electrodes and (Ba,Sr)TiO 3 dielectric layers grown by MBE are demonstrated. Optimization of structural quality of the vertical stack is shown to produce very low dielectric loss combined with very high tunability of the dielectric constant by DC bias. This results in considerable improvement of common figures of merit for varactor performance in comparison to previous reports. Another target application for transition metals oxides is in resistive switching memories, which are based on the hysteretic current-voltage response observed in many oxide-based Schottky junctions and capacitors. A study on the role of metal/oxide interface quality is presented. In particular, the use of epitaxial Pt(001) as Schottky contacts to Nb:SRTiO 3 is shown to suppress resistive switching hysteresis by eliminating unintentional contributions to interface capacitance. Such uncontrolled factors are discussed as a probable root cause for poor reproducibility in resistive switching memories, currently a ubiquitous challenge in the field. Potential routes towards stabilizing reproducible switching through intentional control of defect densities in high-quality structures are discussed, including a proof of concept demonstration using Schottky junctions incorporating intentionally non-stoichiometric SRTiO3 interlayers grown by MBE. The second section of this thesis is concerned with unconventional electronic transport in SRTiO3. A systematic description of scattering mechanisms will be presented for three related material systems: uniformly-doped SRTiO3, two-dimensional electron liquids (2DEL) at SRTiO3/RTiO 3 interfaces (R = Gd, Sm) and confined 2DELs in RTiO3/SRTiO3/ RTiO3 quantum wells. In particular, the prevalence of a well-defined T2 scattering rate in doped SRTiO3 will be discussed as being incompatible with its traditional assignment as electron-electron scattering in a Fermi liquid. In the case of ultrathin SRTiO3 quantum wells bound by RTiO3, evidence will be presented for the existence of a quantum critical point. This refers to a quantum phase transition at zero temperature towards an ordered phase in SRTiO 3. This transition is driven by increasing confinement of the 2DEL, with a critical point located at the 5 SrO layer thickness of SRTiO 3. It is manifested in anomalous temperature exponents of the power law resistivity. Additionally, a well-defined trend for the separation of the Hall and longitudinal scattering rates will be presented, analogously to a similar effect observed in the normal state of high-Tc superconductors. In particular, a unique pattern of residual scattering separation was documented, consistent with a quantum critical correction to the Hall lifetime that is divergent at the quantum critical point.

Laughlin states on the Poincaré half-plane and their quantum group symmetry

NASA Astrophysics Data System (ADS)

Alimohammadi, M.; Mohseni Sadjadi, H.

1996-09-01

We find the Laughlin states of the electrons on the Poincaré half-plane in different representations. In each case we show that a quantum group 0305-4470/29/17/025/img5 symmetry exists such that the Laughlin states are a representation of it. We calculate the corresponding filling factor by using the plasma analogy of the fractional quantum Hall effect.

Modeling a Hall Thruster from Anode to Plume Far Field

DTIC Science & Technology

2008-12-31

Two dimensional ax symmetric simulations of xenon plasma plume flow fields from a D55 Anode layer Hall thruster is performed. A hybrid particle-fluid...method is used for the Simulations. The magnetic field surrounding the Hall thruster exit is included in the Calculation. The plasma properties