Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

NASA Astrophysics Data System (ADS)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

Modelling short channel mosfets for use in VLSI

NASA Technical Reports Server (NTRS)

Klafter, Alex; Pilorz, Stuart; Polosa, Rosa Loguercio; Ruddock, Guy; Smith, Andrew

1986-01-01

In an investigation of metal oxide semiconductor field effect transistor (MOFSET) devices, a one-dimensional mathematical model of device dynamics was prepared, from which an accurate and computationally efficient drain current expression could be derived for subsequent parameter extraction. While a critical review revealed weaknesses in existing 1-D models (Pao-Sah, Pierret-Shields, Brews, and Van de Wiele), this new model in contrast was found to allow all the charge distributions to be continuous, to retain the inversion layer structure, and to include the contribution of current from the pinched-off part of the device. The model allows the source and drain to operate in different regimes. Numerical algorithms used for the evaluation of surface potentials in the various models are presented.

Leakage current conduction in metal gate junctionless nanowire transistors

NASA Astrophysics Data System (ADS)

Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

2017-05-01

In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region.

Current conduction in junction gate field effect transistors. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Kim, C.

1970-01-01

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Two-Dimensional Quantum Model of a Nanotransistor

NASA Technical Reports Server (NTRS)

Govindan, T. R.; Biegel, B.; Svizhenko, A.; Anantram, M. P.

2009-01-01

A mathematical model, and software to implement the model, have been devised to enable numerical simulation of the transport of electric charge in, and the resulting electrical performance characteristics of, a nanotransistor [in particular, a metal oxide/semiconductor field-effect transistor (MOSFET) having a channel length of the order of tens of nanometers] in which the overall device geometry, including the doping profiles and the injection of charge from the source, gate, and drain contacts, are approximated as being two-dimensional. The model and software constitute a computational framework for quantitatively exploring such device-physics issues as those of source-drain and gate leakage currents, drain-induced barrier lowering, and threshold voltage shift due to quantization. The model and software can also be used as means of studying the accuracy of quantum corrections to other semiclassical models.

Analytic drain current model for III-V cylindrical nanowire transistors

NASA Astrophysics Data System (ADS)

Marin, E. G.; Ruiz, F. G.; Schmidt, V.; Godoy, A.; Riel, H.; Gámiz, F.

2015-07-01

An analytical model is proposed to determine the drain current of III-V cylindrical nanowires (NWs). The model uses the gradual channel approximation and takes into account the complete analytical solution of the Poisson and Schrödinger equations for the Γ-valley and for an arbitrary number of subbands. Fermi-Dirac statistics are considered to describe the 1D electron gas in the NWs, being the resulting recursive Fermi-Dirac integral of order -1/2 successfully integrated under reasonable assumptions. The model has been validated against numerical simulations showing excellent agreement for different semiconductor materials, diameters up to 40 nm, gate overdrive biases up to 0.7 V, and densities of interface states up to 1013eV-1cm-2 .

An improved model to predict bandwidth enhancement in an inductively tuned common source amplifier.

PubMed

Reza, Ashif; Misra, Anuraag; Das, Parnika

2016-05-01

This paper presents an improved model for the prediction of bandwidth enhancement factor (BWEF) in an inductively tuned common source amplifier. In this model, we have included the effect of drain-source channel resistance of field effect transistor along with load inductance and output capacitance on BWEF of the amplifier. A frequency domain analysis of the model is performed and a closed-form expression is derived for BWEF of the amplifier. A prototype common source amplifier is designed and tested. The BWEF of amplifier is obtained from the measured frequency response as a function of drain current and load inductance. In the present work, we have clearly demonstrated that inclusion of drain-source channel resistance in the proposed model helps to estimate the BWEF, which is accurate to less than 5% as compared to the measured results.

Comparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's

NASA Astrophysics Data System (ADS)

Zupac, Dragan; Kosier, Steven L.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Baum, Keith W.

1991-10-01

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.

Toward refined environmental scenarios for ecological risk assessment of down-the-drain chemicals in freshwater environments.

PubMed

Franco, Antonio; Price, Oliver R; Marshall, Stuart; Jolliet, Olivier; Van den Brink, Paul J; Rico, Andreu; Focks, Andreas; De Laender, Frederik; Ashauer, Roman

2017-03-01

Current regulatory practice for chemical risk assessment suffers from the lack of realism in conventional frameworks. Despite significant advances in exposure and ecological effect modeling, the implementation of novel approaches as high-tier options for prospective regulatory risk assessment remains limited, particularly among general chemicals such as down-the-drain ingredients. While reviewing the current state of the art in environmental exposure and ecological effect modeling, we propose a scenario-based framework that enables a better integration of exposure and effect assessments in a tiered approach. Global- to catchment-scale spatially explicit exposure models can be used to identify areas of higher exposure and to generate ecologically relevant exposure information for input into effect models. Numerous examples of mechanistic ecological effect models demonstrate that it is technically feasible to extrapolate from individual-level effects to effects at higher levels of biological organization and from laboratory to environmental conditions. However, the data required to parameterize effect models that can embrace the complexity of ecosystems are large and require a targeted approach. Experimental efforts should, therefore, focus on vulnerable species and/or traits and ecological conditions of relevance. We outline key research needs to address the challenges that currently hinder the practical application of advanced model-based approaches to risk assessment of down-the-drain chemicals. Integr Environ Assess Manag 2017;13:233-248. © 2016 SETAC. © 2016 SETAC.

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

NASA Astrophysics Data System (ADS)

Xu, Huifang; Dai, Yuehua

2017-02-01

A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

NASA Astrophysics Data System (ADS)

Raksharam; Dutta, Aloke K.

2017-04-01

In this paper, a unified analytical model for the drain current of a symmetric Double-Gate Junctionless Field-Effect Transistor (DG-JLFET) is presented. The operation of the device has been classified into four modes: subthreshold, semi-depleted, accumulation, and hybrid; with the main focus of this work being on the accumulation mode, which has not been dealt with in detail so far in the literature. A physics-based model, using a simplified one-dimensional approach, has been developed for this mode, and it has been successfully integrated with the model for the hybrid mode. It also includes the effect of carrier mobility degradation due to the transverse electric field, which was hitherto missing in the earlier models reported in the literature. The piece-wise models have been unified using suitable interpolation functions. In addition, the model includes two most important short-channel effects pertaining to DG-JLFETs, namely the Drain Induced Barrier Lowering (DIBL) and the Subthreshold Swing (SS) degradation. The model is completely analytical, and is thus computationally highly efficient. The results of our model have shown an excellent match with those obtained from TCAD simulations for both long- and short-channel devices, as well as with the experimental data reported in the literature.

Optimization of limestone drains for long- term treatment of acidic mine drainage, Swatara Creek Basin, Schuylkill County, PA

USGS Publications Warehouse

Cravotta, Charles A.; Ward, S.J.; Koury, Daniel J.; Koch, R.D.

2004-01-01

Limestone drains were constructed in 1995, 1997, and 2000 to treat acidic mine drainage (AMD) from the Orchard, Buck Mtn., and Hegins discharges, respectively, in the Swatara Creek Basin, Southern Anthracite Coalfield, east-central Pennsylvania. This report summarizes the construction characteristics and performance of each of the limestone drains on the basis of influent and effluent quality and laboratory tests of variables affecting limestone dissolution rates. Data for influent and effluent indicate substantial alkalinity production by the Orchard and Buck Mtn. limestone drains and only marginal benefits from the Hegins drain. Nevertheless, the annual alkalinity loading rates have progressively declined with age of all three systems. Collapsible-container (cubitainer) testing was conducted to evaluate current scenarios and possible options for reconstruction and maintenance of the limestone drains to optimize their long-term performance. The cubitainer tests indicated dissolution rates for the current configurations that were in agreement with field flux data (net loading) for alkalinity and dissolved calcium. The dissolution rates in cubitainers were larger for closed conditions than open conditions, but the rates were comparable for coated and uncoated limestone for a given condition. Models developed on the basis of the cubitainer testing indicate (1) exponential declines in limestone mass and corresponding alkalinity loading rates with increased age of limestone drains and (2) potential for improved performance with enlargement, complete burial, and/or regular flushing of the systems.

Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Jun-Sik; Rim, Taiuk; Kim, Jungsik; Kim, Kihyun; Baek, Chang-Ki; Jeong, Yoon-Ha

2015-03-01

Random dopant fluctuation effects of gate-all-around inversion-mode silicon nanowire field-effect transistors (FETs) with different diameters and extension lengths are investigated. The nanowire FETs with smaller diameter and longer extension length reduce average values and variations of subthreshold swing and drain-induced barrier lowering, thus improving short channel immunity. Relative variations of the drain currents increase as the diameter decreases because of decreased current drivability from narrower channel cross-sections. Absolute variations of the drain currents decrease critically as the extension length increases due to decreasing the number of arsenic dopants penetrating into the channel region. To understand variability origins of the drain currents, variations of source/drain series resistance and low-field mobility are investigated. All these two parameters affect the variations of the drain currents concurrently. The nanowire FETs having extension lengths sufficient to prevent dopant penetration into the channel regions and maintaining relatively large cross-sections are suggested to achieve suitable short channel immunity and small variations of the drain currents.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Equivalent input spectrum and drain current spectrum for 1/ƒ noise in short channel MOS transistors

NASA Astrophysics Data System (ADS)

Gentil, P.; Mounib, A.

1981-05-01

Flicker noise in MOS transistors can be evaluated by measuring the spectrum SID of the drain current fluctuation or the spectrum Sve of an equivalent gate fluctuation. We show here that experimental variations of {S I D}/{Sve} are in good agreement with gm2 by considering a model of the transconductance gm which takes into account the variations of the channel carriers mobility with the surface electric field. The model agrees with the experimental results obtained on short channel MOS transistors which exhibit large variations of mobility with the gate voltage. The validity of physical interpretations of noise data on MOS transistors is examined.

Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application.

PubMed

Chatterjee, Prasenjit; Chow, Hwang-Cherng; Feng, Wu-Shiung

2016-08-30

This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in size with respect to the metal loop, which ensures that the generated magnetic field is approximately uniform. The change of drain current and change of bulk current per micron device width has been measured. The result shows that the difference drain current is about 145 µA for the maximum applied magnetic field. Such changes occur from the applied Lorentz force to push out the carriers from the channel. Based on the drain current difference, the change in effective mobility has been detected up to 4.227%. Furthermore, a detailed investigation reveals that the device behavior is quite different in subthreshold and saturation region. A change of 50.24 µA bulk current has also been measured. Finally, the device has been verified for use as a magnetic sensor with sensitivity 4.084% (29.6 T(-1)), which is very effective as compared to other previously reported works for a single device.

Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Qin, Ting; Liao, Congwei; Huang, Shengxiang; Yu, Tianbao; Deng, Lianwen

2018-01-01

An analytical drain current model based on the surface potential is proposed for amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) with a synchronized symmetric dual-gate (DG) structure. Solving the electric field, surface potential (φS), and central potential (φ0) of the InGaZnO film using the Poisson equation with the Gaussian method and Lambert function is demonstrated in detail. The compact analytical model of current-voltage behavior, which consists of drift and diffusion components, is investigated by regional integration, and voltage-dependent effective mobility is taken into account. Comparison results demonstrate that the calculation results obtained using the derived models match well with the simulation results obtained using a technology computer-aided design (TCAD) tool. Furthermore, the proposed model is incorporated into SPICE simulations using Verilog-A to verify the feasibility of using DG InGaZnO TFTs for high-performance circuit designs.

Evapotranspiration from drained wetlands: drivers, modeling, storage functions, and restoration implications

NASA Astrophysics Data System (ADS)

Shukla, S.; Wu, C. L.; Shrestha, N.

2017-12-01

Abstract Evapotranspiration (ET) is a major component of wetland and watershed water budgets. The effect of wetland drainage on ET is not well understood. We tested whether the current understanding of insignificant effect of drainage on ET in the temperate region wetlands applies to those in the sub-tropics. Eddy covariance (EC) based ET measurements were made for two years at two previously drained and geographically close wetlands in the Everglades region of Florida. One wetland was significantly drained with 97% of its storage capacity lost. The other was a more functional wetland with 42% of storage capacity lost. Annual average ET at the significantly drained wetland was 836 mm, 34% less than the function wetland (1271 mm) and the difference was statistically significant (p = 0.001). Such differences in wetland ET in the same climatic region have not been observed. The difference in ET was mainly due to drainage driven differences in inundation and associated effects on net radiation (Rn) and local relative humidity. Two daily ET models, a regression (r2 = 0.80) and a Relevance Vector Machine (RVM) model (r2 = 0.84), were developed with the latter being more robust. These models, when used in conjunction with hydrologic models, improved ET predictions for drained wetlands. Predictions from an integrated model showed that more intensely drained wetlands at higher elevation should be targeted for restoration of downstream flows (flooding) because they have the ability to loose higher water volume through ET which increases available water storage capacity of wetlands. Daily ET models can predict changes in ET for improved evaluation of basin-scale effects of restoration programs and climate change scenarios.

Evapotranspiration from drained wetlands with different hydrologic regimes: Drivers, modeling, and storage functions

NASA Astrophysics Data System (ADS)

Wu, Chin-Lung; Shukla, Sanjay; Shrestha, Niroj K.

2016-07-01

We tested whether the current understanding of insignificant effect of drainage on evapotranspiration (ET) in the temperate region wetlands applies to those in the subtropics. Hydro-climatic drivers causing the changes in drained wetlands were identified and used to develop a generic model to predict wetland ET. Eddy covariance (EC)-based ET measurements were made for two years at two differently drained but close by wetlands, a heavily drained wetland (SW) (97% reduced surface storage) and a more functional wetland (DW) (42% reduced storage). Annual ET for more intensively drained SW was 836 mm, 34% less than DW (1271 mm) and the difference was significant (p = 0.001). This difference was mainly due to drainage driven differences in inundation and associated effects on net radiation (Rn) and local relative humidity. Two generic daily ET models, a regression model (MSE = 0.44 mm2, R2 = 0.80) and a machine learning-based Relevance Vector Machine (RVM) model (MSE = 0.36 mm2, R2 = 0.84), were developed with the latter being more robust. The RVM model can predict changes in ET for different restoration scenarios; a 1.1 m rise in drainage level showed 7% increase ET (18 mm) at SW while the increase at DW was negligible. The additional ET, 28% of surface flow, can enhance water storage, flood protection, and climate mitigation services at SW compared to DW. More intensely drained wetlands at higher elevation should be targeted for restoration for enhanced storage through increased ET. The models developed can predict changes in ET for improved evaluation of basin-scale effects of restoration programs and climate change scenarios.

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

NASA Astrophysics Data System (ADS)

Thorpe, B.; Kalna, K.; Langbein, F. C.; Schirmer, S.

2017-12-01

Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.

Charge-based MOSFET model based on the Hermite interpolation polynomial

NASA Astrophysics Data System (ADS)

Colalongo, Luigi; Richelli, Anna; Kovacs, Zsolt

2017-04-01

An accurate charge-based compact MOSFET model is developed using the third order Hermite interpolation polynomial to approximate the relation between surface potential and inversion charge in the channel. This new formulation of the drain current retains the same simplicity of the most advanced charge-based compact MOSFET models such as BSIM, ACM and EKV, but it is developed without requiring the crude linearization of the inversion charge. Hence, the asymmetry and the non-linearity in the channel are accurately accounted for. Nevertheless, the expression of the drain current can be worked out to be analytically equivalent to BSIM, ACM and EKV. Furthermore, thanks to this new mathematical approach the slope factor is rigorously defined in all regions of operation and no empirical assumption is required.

Stability of amorphous silicon thin film transistors and circuits

NASA Astrophysics Data System (ADS)

Liu, Ting

Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) have been widely used for the active-matrix addressing of flat panel displays, optical scanners and sensors. Extending the application of the a-Si TFTs from switches to current sources, which requires continuous operation such as for active-matrix organic light-emitting-diode (AMOLED) pixels, makes stability a critical issue. This thesis first presents a two-stage model for the stability characterization and reliable lifetime prediction for highly stable a-Si TFTs under low gate-field stress. Two stages of the threshold voltage shift are identified from the decrease of the drain saturation current under low-gate field. The first initial stage dominates up to hours or days near room temperature. It can be characterized with a stretched-exponential model, with the underlying physical mechanism of charge trapping in the gate dielectric. The second stage dominates in the long term and then saturates. It corresponds to the breaking of weak bonds in the amorphous silicon. It can be modeled with a "unified stretched exponential fit," in which a thermalization energy is used to unify experimental measurements of drain current decay at different temperatures into a single curve. Two groups of experiments were conducted to reduce the drain current instability of a-Si TFTs under prolonged gate bias. Deposition conditions for the silicon nitride (SiNx) gate insulator and the a-Si channel layer were varied, and TFTs were fabricated with all reactive ion etching steps, or with all wet etching steps, the latter in a new process. The two-stage model that unites charge trapping in the SiNx gate dielectric and defect generation in the a-Si channel was used to interpret the experimental results. We identified the optimal substrate temperature, gas flow ratios, and RF deposition power densities. The stability of the a-Si channel depends also on the deposition conditions for the underlying SiNx gate insulator. TFTs made with wet etching are more stable than TFTs made with reactive ion etching. Combining the various improvements raised the extrapolated 50% decay time of the drain current of back channel passivated dry-etched TFTs under continuous operation at 20°C from 3.3 x 104 sec (9.2 hours) to 4.4 x 107 sec (1.4 years). The 50% lifetime can be further improved by ˜2 times through wet etching process. Two assumptions in the two-stage model were revisited. First, the distribution of the gap state density in a-Si was obtained with the field-effect technique. The redistribution of the gap state density after low-gate field stress supports the idea that defect creation in a-Si dominates in the long term. Second, the drain-bias dependence of drain current degradation was measured and modeled. The unified stretched exponential was validated for a-Si TFTs operating in saturation. Finally, a new 3-TFT voltage-programmed pixel circuit with an in-pixel current source is presented. This circuit is largely insensitive to the TFT threshold voltage shift. The fabricated pixel circuit provides organic light-emitting diode (OLED) currents ranging from 25 nA to 2.9 microA, an on/off ratio of 116 at typical quarter graphics display resolution (QVGA) display timing. The overall conclusion of this thesis research is that the operating life of a-Si TFTs can be quite long, and that these transistors can expect to find yet more applications in large area electronics.

Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

NASA Technical Reports Server (NTRS)

Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

2007-01-01

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

Scaling properties of ballistic nano-transistors

PubMed Central

2011-01-01

Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade. PMID:21711899

Simulation Model of A Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen; Russell, Larry W. (Technical Monitor)

2002-01-01

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations.

PubMed

Yoon, Young Jun; Eun, Hye Rim; Seo, Jae Hwa; Kang, Hee-Sung; Lee, Seong Min; Lee, Jeongmin; Cho, Seongjae; Tae, Heung-Sik; Lee, Jung-Hee; Kang, In Man

2015-10-01

We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (Cgd) because of the increase in the overlap capacitance (Cov) and inversion capacitance (Cinv). Thus, in this work, a dual-metal gate structure is additionally applied along with the drain overlap. The current performance and the total gate capacitance (Cgg) of the device with a dual-metal gate can be possibly controlled by adjusting the metal gate workfunction (φgate) and φoverlap-gate in the overlapping regions. As a result, the intrinsic delay time (τ) is greatly reduced by obtaining lower Cgg divided by the on-state current (Ion), i.e., Cgg/Ion. We have successfully demonstrated excellent LP and high-speed performance of a highly scaled TFET by adopting both drain overlap and dual-metal gate with DIBT minimization.

Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-01-01

A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valin, R., E-mail: r.valinferreiro@swansea.ac.uk; Martinez, A., E-mail: a.e.Martinez@swansea.ac.uk; Barker, J. R., E-mail: john.barker@glasgow.ac.uk

In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. Thismore » effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias.« less

Enhanced performance of amorphous In-Ga-Zn-O thin-film transistors using different metals for source/drain electrodes

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-09-01

In this paper, we propose an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with off-planed source/drain electrodes. We applied different metals for the source/drain electrodes with Ni and Ti to control the work function as high and low. When we measured the configuration of Ni to drain and source to Ti, the a-IGZO TFT showed increased driving current, decreased leakage current, a high on/off current ratio, low subthreshold swing, and high mobility. In addition, we conducted a reliability test with a gate bias stress test at various temperatures. The results of the reliability test showed the Ni drain and Ti drain had an equivalent effective energy barrier height. Thus, we confirmed that the proposed off-planed structure improved the electrical characteristics of the fabricated devices without any degradation of characteristics. Through the a-IGZO TFT with different source/drain electrode metal engineering, we realized high-performance TFTs for next-generation display devices.

Photocurrent microscopy of contact resistance and charge carrier traps in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liewald, C.; Reiser, D.; Westermeier, C.; Nickel, B.

2016-08-01

We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.

Nano-Transistor Modeling: Two Dimensional Green's Function Method

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

Two quantum mechanical effects that impact the operation of nanoscale transistors are inversion layer energy quantization and ballistic transport. While the qualitative effects of these features are reasonably understood, a comprehensive study of device physics in two dimensions is lacking. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL (Drain Induced Barrier Lowering), and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI).

Electronic Model of a Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen; Russell, Larry (Technical Monitor)

2001-01-01

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

NASA Astrophysics Data System (ADS)

Cai, M. X.; Yao, R. H.

2018-03-01

Temperature dependent electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are investigated considering the percolation and multiple trapping and release (MTR) conduction mechanisms. Carrier-density and temperature dependent carrier mobility in a-IGZO is derived with the Boltzmann transport equation, which is affected by potential barriers above the conduction band edge with Gaussian-like distributions. The free and trapped charge densities in the channel are calculated with Fermi-Dirac statistics, and the field effective mobility of a-IGZO TFTs is then deduced based on the MTR theory. Temperature dependent drain current model for a-IGZO TFTs is finally derived with the obtained low field mobility and free charge density, which is applicable to both non-degenerate and degenerate conductions. This physical-based model is verified by available experiment results at various temperatures.

Analytical Modeling of Triple-Metal Hetero-Dielectric DG SON TFET

NASA Astrophysics Data System (ADS)

Mahajan, Aman; Dash, Dinesh Kumar; Banerjee, Pritha; Sarkar, Subir Kumar

2018-02-01

In this paper, a 2-D analytical model of triple-metal hetero-dielectric DG TFET is presented by combining the concepts of triple material gate engineering and hetero-dielectric engineering. Three metals with different work functions are used as both front- and back gate electrodes to modulate the barrier at source/channel and channel/drain interface. In addition to this, front gate dielectric consists of high-K HfO2 at source end and low-K SiO2 at drain side, whereas back gate dielectric is replaced by air to further improve the ON current of the device. Surface potential and electric field of the proposed device are formulated solving 2-D Poisson's equation and Young's approximation. Based on this electric field expression, tunneling current is obtained by using Kane's model. Several device parameters are varied to examine the behavior of the proposed device. The analytical model is validated with TCAD simulation results for proving the accuracy of our proposed model.

Evaluation of wick drain performance in Virginia soils.

DOT National Transportation Integrated Search

2003-01-01

Prefabricated vertical drains (PVD), also known as wick drains, are commonly used to accelerate the consolidation of fine-grained soils in order to reduce future settlements and increase shear strength. Various drain designs are currently on the mark...

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

NASA Astrophysics Data System (ADS)

Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

1997-03-01

Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

High efficiency FET microwave detector design

NASA Astrophysics Data System (ADS)

Luglio, Juan; Ishii, Thomas Koryu

1990-12-01

The work is based on an assumption that very little microwave power would be consumed at a negatively biased gate of a microwave FET, yet significant detected signals would be obtained at the drain if the bias is given. By analyzing a Taylor-series expansion of the drain-current equation in the vicinity of a fixed gate-bias voltage, the bias voltage is found to maximize the second derivative of the drain current, the gate-bias voltage characteristic curve for the maximum detected drain current under a given fixed drain-bias voltage. Based on these findings, a high-efficiency microwave detector is designed, fabricated, and tested at 8.6 GHz, and it is shown that the audio power over absorbed microwave power ratio of the detector is 135 percent due to the positive gain.

A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design

NASA Astrophysics Data System (ADS)

Chien, Feng-Tso; Chen, Jian-Liang; Chen, Chien-Ming; Chen, Chii-Wen; Cheng, Ching-Hwa; Chiu, Hsien-Chin

2017-11-01

In this paper, a novel step gate-overlapped lightly doped drain (GOLDD) with raised source/drain (RSD) structure (SGORSD) is proposed for TFT electronic device application. The new SGORSD structure could obtain a low electric field at channel near the drain side owing to a step GOLDD design. Compared to the conventional device, the SGORSD TFT exhibits a better kink effect and higher breakdown performance due to the reduced drain electric field (D-EF). In addition, the leakage current also can be suppressed. Moreover, the device stability, such as the threshold voltage shift and drain current degradation under a high gate bias, is improved by the design of SGORSD structure. Therefore, this novel step GOLDD structure can be a promising design to be used in active-matrix flat panel electronics.

Effects of pond draining on biodiversity and water quality of farm ponds.

PubMed

Usio, Nisikawa; Imada, Miho; Nakagawa, Megumi; Akasaka, Munemitsu; Takamura, Noriko

2013-12-01

Farm ponds have high conservation value because they contribute significantly to regional biodiversity and ecosystem services. In Japan pond draining is a traditional management method that is widely believed to improve water quality and eradicate invasive fish. In addition, fishing by means of pond draining has significant cultural value for local people, serving as a social event. However, there is a widespread belief that pond draining reduces freshwater biodiversity through the extirpation of aquatic animals, but scientific evaluation of the effectiveness of pond draining is lacking. We conducted a large-scale field study to evaluate the effects of pond draining on invasive animal control, water quality, and aquatic biodiversity relative to different pond-management practices, pond physicochemistry, and surrounding land use. The results of boosted regression-tree models and analyses of similarity showed that pond draining had little effect on invasive fish control, water quality, or aquatic biodiversity. Draining even facilitated the colonization of farm ponds by invasive red swamp crayfish (Procambarus clarkii), which in turn may have detrimental effects on the biodiversity and water quality of farm ponds. Our results highlight the need for reconsidering current pond management and developing management plans with respect to multifunctionality of such ponds. Efectos del Drenado de Estanques sobre la Biodiversidad y la Calidad del Agua en Estanques de Cultivo. © 2013 Society for Conservation Biology.

Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

NASA Astrophysics Data System (ADS)

Kale, Sumit; Kondekar, Pravin N.

2018-01-01

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

Modeling of coastal water contamination in Fortaleza (Northeastern Brazil).

PubMed

Pereira, S P; Rosman, P C C; Alvarez, C; Schetini, C A F; Souza, R O; Vieira, R H S F

2015-01-01

An important tool in environmental management projects and studies due to the complexity of environmental systems, environmental modeling makes it possible to integrate many variables and processes, thereby providing a dynamic view of systems. In this study the bacteriological quality of the coastal waters of Fortaleza (a state capital in Northeastern Brazil) was modeled considering multiple contamination sources. Using the software SisBaHiA, the dispersion of thermotolerant coliforms and Escherichia coli from three sources of contamination (local rivers, storm drains and submarine outfall) was analyzed. The models took into account variations in bacterial decay due to solar radiation and other environmental factors. Fecal pollution discharged from rivers and storm drains is transported westward by coastal currents, contaminating strips of beach water to the left of each storm drain or river. Exception to this condition only occurs on beaches protected by the breakwater of the harbor, where counterclockwise vortexes reverse this behavior. The results of the models were consistent with field measurements taken during the dry and the rainy season. Our results show that the submarine outfall plume was over 2 km from the nearest beach. The storm drains and the Maceió stream are the main factors responsible for the poor water quality on the waterfront of Fortaleza. The depollution of these sources would generate considerable social, health and economic gains for the region.

A novel inexpensive IV catheterization training model for paramedic students.

PubMed

Parwani, Vivek; Cone, David C

2006-01-01

Teaching paramedic students venipuncture and intravenous catheterization has traditionally relied on bulky, expensive phlebotomy models. A gelatin intravenous model (GIM) costing less than 50 cents is currently being used in the training of medical students and interns. The study objective was to evaluate paramedic students' perceptions of the GIM as a training tool. GIMs are created using gelatin, psyllium, Penrose drains, food coloring, salt, and water. Penrose drains are filled with artificial blood composed of salt water and food coloring. The drains are placed in an aluminum pan with a base of hardening gelatin, with half-inch drains at the bottom of the pan and quarter-inch drains higher up in layers of mixed psyllium and gelatin to simulate deep and superficial veins respectively. A convenience, volunteer sample of 14 paramedic students who previously trained with traditional phlebotomy models each made two to five attempts at intravenous insertion using the GIM. Perceptions of the GIM were measured using a Likert scale (1, worst rating; 5, best rating). Means are reported. Study subjects rated ease of use at 4.17, realism at 4.07, and effectiveness in learning intravenous insertion at 4.28. GIM as a more effective teaching tool than the conventional rubber arm yielded a rating of 4.14. This study is limited by a small sample size, and further studies evaluating the GIMs construct and content validity are needed. Despite these limitations, given the GIMs simplicity and value, paramedic instructors may wish to consider implementation of this device in their training programs.

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

2016-12-01

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

NASA Astrophysics Data System (ADS)

Garg, Shelly; Saurabh, Sneh

2018-01-01

In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demonstrate the superiority of the DP technique over the existing techniques in controlling the ambipolar current. In particular, the addition of DP to a TFET is able to fully suppress the ambipolar current even when TFET is biased at high negative gate voltages and drain doping is kept as high as the source doping. Moreover, adding DP is complementary to the well-known technique of employ-ing source-pocket (SP) in a TFET since both need similar doping type and doping concentration.

THE PANCHROMATIC HUBBLE ANDROMEDA TREASURY. VIII. A WIDE-AREA, HIGH-RESOLUTION MAP OF DUST EXTINCTION IN M31

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dalcanton, Julianne J.; Fouesneau, Morgan; Weisz, Daniel R.

We map the distribution of dust in M31 at 25 pc resolution using stellar photometry from the Panchromatic Hubble Andromeda Treasury survey. The map is derived with a new technique that models the near-infrared color–magnitude diagram (CMD) of red giant branch (RGB) stars. The model CMDs combine an unreddened foreground of RGB stars with a reddened background population viewed through a log-normal column density distribution of dust. Fits to the model constrain the median extinction, the width of the extinction distribution, and the fraction of reddened stars in each 25 pc cell. The resulting extinction map has a factor ofmore » ≳4 times better resolution than maps of dust emission, while providing a more direct measurement of the dust column. There is superb morphological agreement between the new map and maps of the extinction inferred from dust emission by Draine et al. However, the widely used Draine and Li dust models overpredict the observed extinction by a factor of ∼2.5, suggesting that M31's true dust mass is lower and that dust grains are significantly more emissive than assumed in Draine et al. The observed factor of ∼2.5 discrepancy is consistent with similar findings in the Milky Way by the Plank Collaboration et al., but we find a more complex dependence on parameters from the Draine and Li dust models. We also show that the the discrepancy with the Draine et al. map is lowest where the current interstellar radiation field has a harder spectrum than average. We discuss possible improvements to the CMD dust mapping technique, and explore further applications in both M31 and other galaxies.« less

The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

PubMed

Xiao, Z; Camino, F E

2009-04-01

Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

DOEpatents

Turner, Steven Richard

2006-12-26

A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors

NASA Astrophysics Data System (ADS)

Kim, Sang Min; Cho, Won Ju; Yu, Chong Gun; Park, Jong Tae

2018-04-01

In this work, the lifetime prediction models of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were suggested for the application of display device and BEOL (Back End Of line) transistors with embedded a-IGZO TFTs. Four different types of test devices according to the active layer thickness, source/drain electrode materials and thermal treatments have been used to verify the suggested model. The device lifetimes under high gate bias stress and hot carrier stress were extracted through fittings of the stretched-exponential equation for threshold voltage shifts and the current estimation method for drain current degradations. Our suggested lifetime prediction models could be used in any kinds of structures of a-IGZO TFTs for the application of display device and BEOL transistors. The a-IGZO TFTs with embedded ITO local conducting layer under source/drain is better for BEOL transistor application and a-IGZO TFTs with InGaZnO thin film as source/drain electrodes may be better for the application of display devices. From 1983 to 1985, he was a Researcher at Gold-Star Semiconductor, Inc., Korea, where he worked on the development of SRAM. He joined the Department of Electronics Engineering, University of Incheon, Incheon, Korea, in 1987, where he is a Professor. As a visiting scientist at Massachusetts Institute of Technology, Cambridge, in 1991, he conducted research in hot carrier reliability of CMOS. As a visiting scholar at University of California, Davis, in 2001, he conducted research on the device structure of Nano-scale SOI CMOS. His recent interests are device structure and reliability of Nano-scale CMOS devices, flash memory, and thin film transistors.

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

2017-11-01

Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

PubMed

Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

2011-06-08

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

p-MOSFET total dose dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

1994-01-01

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

Influence of Scattering on Ballistic Nanotransistor Design

NASA Technical Reports Server (NTRS)

Anantram, M. P.; Svizhenko, Alexei; Biegel, Bryan, A. (Technical Monitor)

2002-01-01

Importance of this work: (1) This is the first work to model electron-phonon scattering within a quantum mechanical approach to nanotransistors. The simulations use the non equilibrium Green's function method. (2) A simple equation which captures the importance of scattering as a function of the spatial location from source to drain is presented. This equation helps interpret the numerical simulations. (3) We show that the resistance per unit length in the source side is much larger than in the drain side. Thus making scattering in the source side of the device much more important than scattering in the drain side. Numerical estimates of ballisticity for 10nm channel length devices in the presence of of electron-phonon scattering are given. Based on these calculations, we propose that to achieve a larger on-current in nanotransistors, it is crucial to keep the highly doped source extension region extremely small, even if this is at the cost of making the highly doped drain extension region longer.

Method and system for reducing device performance degradation of organic devices

DOEpatents

Teague, Lucile C.

2014-09-02

Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.

Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique

NASA Astrophysics Data System (ADS)

Qiang, Lei; Liang, Xiaoci; Cai, Guangshuo; Pei, Yanli; Yao, Ruohe; Wang, Gang

2018-06-01

Indium zinc oxide (IZO) thin film transistor (TFT) deposited by solution method is of considerable technological interest as it is a key component for the fabrication of flexible and cheap transparent electronic devices. To obtain a principal understanding of physical properties of solution-processed IZO TFT, a new drain current model that account for the charge transport is proposed. The formulation is developed by incorporating the effect of gate voltage on mobility and threshold voltage with the carrier charges. It is demonstrated that in IZO TFTs the below threshold regime should be divided into two sections: EC - EF > 3kT and EC - EF ≤ 3kT, where kT is the thermal energy, EF and EC represent the Fermi level and the conduction band edge, respectively. Additionally, in order to describe conduction mechanisms more accurately, the extended mobility edge model is conjoined, which can also get rid of the complicated and lengthy computations. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin film circuits.

Dual drain MOSFET detector for crosstie memory systems

NASA Astrophysics Data System (ADS)

Bluzer, N.

1985-03-01

This patent application, which discloses a circuit for detecting binary information in crosstie memory systems includes a dual drain MOSFET device having a single channel with a common source and an integrated, thin-film strip of magnetic material suitable for the storage and propagation of Bloch line-crosstie pairs acting as both a shift register and the device's gate. Current flowing through the device, in the absence of a magnetic field, is equally distributed to each drain; however, changing magnetic fields, normal to the plane of the device and generated by Bloch line-crosstie pairs in the strip, interact with the current such that a distribution imbalance exists and one drain or the other receives a disproportionate fraction of the current depending upon the direction of the magnetic field.

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Chen, Te-Chih; Lin, Kun-Yao; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

2013-07-01

This letter investigates the effect of temperature on hot-carrier stress-induced degradation behavior in InGaZnO thin film transistors. After hot-carrier stress at 25 °C, serious on-current and subthreshold swing degradations are observed due to trap state generation near the drain side. For identical stress performed at elevated temperatures, current degradation in the I-V transfer curve under reverse mode is gradually suppressed and the anomalous hump in the gate-to-drain capacitance-voltage curve becomes more severe. These suppressed degradations and the more severe hump can be both attributed to hole-trapping near the drain side due to high drain bias at high temperature.

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

NASA Astrophysics Data System (ADS)

Naderi, Ali

2017-12-01

In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

NASA Astrophysics Data System (ADS)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

NASA Astrophysics Data System (ADS)

Singh, Subhash; Mohapatra, Y. N.

2017-06-01

We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

Using Arc/Info GIS to help implement the National Pollutant Discharge Elimination System (NPDES) stormwater permit for Los Angeles County

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levine, D.A.; Pace, P.J.; Woods, J.A.

1997-06-01

One of Los Angeles County Department of Public Works` many responsibilities is to manage non-point pollution that enters the storm drain network within Los Angeles County. The management of this non-point source pollution is mandated by the NPDES guidelines under the Federal Clean Water Act. These guidelines require the County to monitor the drainage network and the storm water and urban runoff flowing through it. The County covers over 3,117 square miles, with the NPDES Permit covering over 3,100 square miles and over 2500 miles of storm drains. A proposed solution to monitor and manage this vast geographic area ismore » centered upon an Arc/Info GIS. Some of the many concerns which need to be addressed include the administration and evaluation of Best Management Practices (BMP`s), storm drain inspection for illegal connections and illicit discharges, and pollutant load assessment and modeling. The storm drain network and other coverages will be related to external data bases currently used for facility management and planning. This system would be used for query purposes to perform spatial modeling and {open_quotes}what if{close_quotes} scenarios needed to create maps and reports required by the permit and to evaluate various BMP implementation strategies.« less

Structural tuning of nanogaps using electromigration induced by field emission current with bipolar biasing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yagi, Mamiko; Ito, Mitsuki; Shirakashi, Jun-ichi, E-mail: shrakash@cc.tuat.ac.jp

We report a new method for fabrication of Ni nanogaps based on electromigration induced by a field emission current. This method is called “activation” and is demonstrated here using a current source with alternately reversing polarities. The activation procedure with alternating current bias, in which the current source polarity alternates between positive and negative bias conditions, is performed with planar Ni nanogaps defined on SiO{sub 2}/Si substrates at room temperature. During negative biasing, a Fowler-Nordheim field emission current flows from the source (cathode) to the drain (anode) electrode. The Ni atoms at the tip of the drain electrode are thusmore » activated and then migrate across the gap from the drain to the source electrode. In contrast, in the positive bias case, the field emission current moves the activated atoms from the source to the drain electrode. These two procedures are repeated until the tunnel resistance of the nanogaps is successively reduced from 100 TΩ to 48 kΩ. Scanning electron microscopy and atomic force microscopy studies showed that the gap separation narrowed from approximately 95 nm to less than 10 nm because of the Ni atoms that accumulated at the tips of both the source and drain electrodes. These results show that the alternately biased activation process, which is a newly proposed atom transfer technique, can successfully control the tunnel resistance of the Ni nanogaps and is a suitable method for formation of ultrasmall nanogap structures.« less

Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

NASA Astrophysics Data System (ADS)

Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

A mathematical model to optimize the drain phase in gravity-based peritoneal dialysis systems.

PubMed

Akonur, Alp; Lo, Ying-Cheng; Cizman, Borut

2010-01-01

Use of patient-specific drain-phase parameters has previously been suggested to improve peritoneal dialysis (PD) adequacy. Improving management of the drain period may also help to minimize intraperitoneal volume (IPV). A typical gravity-based drain profile consists of a relatively constant initial fast-flow period, followed by a transition period and a decaying slow-flow period. That profile was modeled using the equation VD(t) = (V(D0) - Q(MAX) x t) xphi + (V(D0) x e(-alphat)) x (1 - phi), where V(D)(t) is the time-dependent dialysate volume; V(D0), the dialysate volume at the start of the drain; Q(MAX), the maximum drain flow rate; alpha, the exponential drain constant; and phi, the unit step function with respect to the flow transition. We simulated the effects of the assumed patient-specific maximum drain flow (Q(MAX)) and transition volume (psi), and the peritoneal volume percentage when transition occurs,for fixed device-specific drain parameters. Average patient transport parameters were assumed during 5-exchange therapy with 10 L of PD solution. Changes in therapy performance strongly depended on the drain parameters. Comparing 400 mL/85% with 200 mL/65% (Q(MAX/psi), drain time (7.5 min vs. 13.5 min) and IPV (2769 mL vs. 2355 mL) increased when the initial drain flow was low and the transition quick. Ultrafiltration and solute clearances remained relatively similar. Such differences were augmented up to a drain time of 22 minutes and an IPV of more than 3 L when Q(MAX) was 100 mL/min. The ability to model individual drain conditions together with water and solute transport may help to prevent patient discomfort with gravity-based PD. However, it is essential to note that practical difficulties such as displaced catheters and obstructed flow paths cause variability in drain characteristics even for the same patient, limiting the clinical applicability of this model.

Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Razavi, S. M.; Ebrahim Hosseini, Seyed; Amini Moghadam, Hamid

2011-11-01

In this paper, the potential impact of drain side-double recessed gate (DS-DRG) on silicon carbide (SiC)-based metal semiconductor field effect transistors (MESFETs) is studied. We investigate the device performance focusing on breakdown voltage, threshold voltage, drain current and dc output conductance with two-dimensional and two-carrier device simulation. Our simulation results demonstrate that the channel thickness under the gate in the drain side is an important factor in the breakdown voltage. Also, the positive shift in the threshold voltage for the DS-DRG structure is larger in comparison with that for the source side-double recessed gate (SS-DRG) SiC MESFET. The saturated drain current for the DS-DRG structure is larger compared to that for the SS-DRG structure. The maximum dc output conductance in the DS-DRG structure is smaller than that in the SS-DRG structure.

Accounting for the risks of phosphorus losses through tile drains in a phosphorus index.

PubMed

Reid, D Keith; Ball, Bonnie; Zhang, T Q

2012-01-01

Tile drainage systems have been identified as a significant conduit for phosphorus (P) losses to surface water, but P indices do not currently account for this transport pathway in a meaningful way. Several P indices mention tile drains, but most account for either the reduction in surface runoff or the enhanced transport through tiles rather than both simultaneously. A summary of the current state of how tile drains are accounted for within P indices is provided, and the challenges in predicting the risk of P losses through tile drains that are relative to actual losses are discussed. A framework for a component P Index is described, along with a proposal to incorporate predictions of losses through tile drains as a component within this framework. Options for calibrating and testing this component are discussed. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Moldovan, Oana; Castro-Carranza, Alejandra; Cerdeira, Antonio; Estrada, Magali; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Miljakovic, Slobodan; Iñiguez, Benjamin

2016-12-01

An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Goto, Ken; Morikawa, Yoji; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

2018-06-01

A vertical β-Ga2O3 metal–oxide–semiconductor field-effect transistor featuring a planar-gate architecture is presented. The device was fabricated by an all-ion-implanted process without requiring trench etching or epitaxial regrowth. A Mg-ion-implanted current blocking layer (CBL) provided electrical isolation between the source and the drain except at an aperture opening through which drain current was conducted. Successful transistor action was realized by gating a Si-ion-implanted channel above the CBL. Thermal diffusion of Mg induced a large source–drain leakage current through the CBL, which resulted in compromised off-state device characteristics as well as a reduced peak extrinsic transconductance compared with the results of simulations.

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

PubMed

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Drain site evisceration of fallopian tube, another reason to discourage abdominal drain: report of a case and brief review of literature.

PubMed

Saini, Pradeep; Faridi, M S; Agarwal, Nitin; Gupta, Arun; Kaur, Navneet

2012-04-01

Placement of a drain following abdominal surgery is common despite a lack of convincing evidence in the current literature to support this practice. The use of intra-abdominal drain is associated with many potential and serious complications. We report a drain site evisceration of the right fallopian tube after the removal of an intra-abdominal drain. The drain was placed in the right iliac fossa in a patient who underwent a lower segment Caesarean section (LSCS) for meconium liquor with fetal distress. The Pfannenstiel incision made for LSCS was reopened and the protruding inflamed fimbrial end of the right fallopian tube was excised. The patient made an uneventful recovery. Routine intra-abdominal prophylactic drain following an abdominal surgery including LSCS should be discouraged.

Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein.

PubMed

Park, Keun-Yong; Kim, Min-Suk; Choi, Sie-Young

2005-04-15

A metal oxide silicon field effect transistor (MOSFET) protein chip for the easy detection of protein was fabricated and its characteristics were investigated. Generally, the drain current of the MOSFET is varied by the gate potential. It is expected that the formation of an antibody-antigen complex on the gate of MOSFET would lead to a detectable change in the charge distribution and thus, directly modulate the drain current of MOSFET. As such, the drain current of the MOSFET protein chip can be varied by ribosomal proteins absorbed by the self-assembled monolayer (SAM) immobilized on the gate (Au) surface, as ribosomal protein has positive charge, and these current variations then used as the response of the protein chip. The gate of MOSFET protein chip is not directly biased by an external voltage source, so called open gate or floating gate MOSFET, but rather chemically modified by immobilized molecular receptors called self-assembled monolayer (SAM). In our experiments, the current variation in the proposed protein chip was about 8% with a protein concentration of 0.7 mM. As the protein concentration increased, the drain current also gradually increased. In addition, there were some drift of the drain current in the device. It is considered that these drift might be caused by the drift from the MOSFET itself or protein absorption procedures that are relied on the facile attachment of thiol (-S) ligands to the gate (Au) surface. We verified the formation of SAM on the gold surface and the absorption of protein through the surface plasmon resonance (SPR) measurement.

Modelling rapid flow response of a tile drained hillslope with explicit representation of preferential flow paths and consideration of equifinal model structures

NASA Astrophysics Data System (ADS)

Klaus, Julian; Zehe, Erwin

2010-05-01

Rapid water flow along spatially connected - often biologically mediated - flow paths of minimum flow resistance is widely acknowledged to play a key role in runoff generation at the hillslope and small catchment scales but also in the transport of solutes like agro chemicals and nutrients in cohesive soils. Especially at tile drained fields site connected vertical flow structures such as worm burrows, roots or shrinkage cracks act as short cuts allowing water flow to bypass the soil matrix. In the present study we propose a spatially explicit approach to represent worm burrows as connected structures of high conductivity and low retention capacity in a 2D physically model. With this approach tile drain discharge and preferential flow patterns in soil observed during the irrigation of a tile drained hillslope in the Weiherbach catchment were modelled. The model parameters derived from measurements and are considered to be uncertain. Given this uncertainty of key factors that organise flow and transport at tile drained sites the main objectives of the present studies are to shed light on the following three questions: 1. Does a simplified approach that explicitly represents worm burrows as continuous flow paths of small flow resistance and low retention properties in a 2D physically model allow successful reproduction of event flow response at a tile drained field site in the Weiherbach catchment? 2. Does the above described uncertainty in key factors cause equifinality i.e. are there several model structural setups that reproduce event flow response in an acceptable manner without compromising our physical understanding of the system? 3. If so, what are the key factors that have to be known at high accuracy to reduce the equifinality of model structures? The issue of equifinality is usually discussed in catchment modelling to indicate that often a large set of conceptual model parameter sets allows acceptable reproduction of the behaviour of the system of interest - in many cases catchment stream flow response. Beven and Binley (1992) suggest that these model structures should be considered to be equally likely to account for predictive uncertainty. In this study we show that the above outline approach allows successful prediction of the tile drain discharge and preferential flow patterns in soil observed during the irrigation of a tile drained hillslope in the Weiherbach catchment flow event. Strikingly we a found a considerable equifinality in the model structural setup, when key parameters such as the area density of worm burrows, their hydraulic conductivity and the conductivity of the tile drains were varied within the ranges of either our measurements or measurements reported in the literature. Thirteen different model setups yielded a normalised time-shifted Nash-Sutcliffe of more than 0.9, which means that more than 90% of the flow variability is explained by the model. Also the flow volumes were in good accordance and timing errors were less or equal than 20 min (which corresponds to two simulation output time steps). It is elaborated that this uncertainty/equifinality could be reduced when more precise data on initial states of the subsurface and on the drainage area of a single drainage tube could be made available. However, such data are currently most difficult to assess even at very well investigated site as the one that is dealt with here. We thus suggest non uniqueness of process based model structures seems thus to be an important factor causing predictive uncertainty at many sites where preferential flow dominates systems response. References Beven, K.J. and Binley, A.M., 1992. The future of distributed models: model calibration and uncertainty prediction, Hydrological Processes, 6, p.279-298.

Analog-model analysis of effect of wastewater management on the ground-water reservoir in Nassau and Suffolk Counties, New York: Report I: Proposed and current sewerage

USGS Publications Warehouse

Kimmel, Grant E.; Harbaugh, Arlen W.

1976-01-01

By 1995, the water table may fall by as much as 5 metres (16 feet) in east-central Nassau County and as much as 1.8 metres (6 feet) in central Suffolk County as a result of proposed sewerage programs. similar, but generally slightly less, change may occur in the potentiometric head in the Magothy aquifer. Streamflow may decrease by as much as 55 percent in streams draining from Nassau County Sewage Disposal District 3 and as much as 56 percent in streams draining from the Huntington-Northport Sewer District.

Exploring the Short-Channel Characteristics of Asymmetric Junctionless Double-Gate Silicon-on-Nothing MOSFET

NASA Astrophysics Data System (ADS)

Saha, Priyanka; Banerjee, Pritha; Dash, Dinesh Kumar; Sarkar, Subir Kumar

2018-03-01

This paper presents an analytical model of an asymmetric junctionless double-gate (asymmetric DGJL) silicon-on-nothing metal-oxide-semiconductor field-effect transistor (MOSFET). Solving the 2-D Poisson's equation, the expressions for center potential and threshold voltage are calculated. In addition, the response of the device toward the various short-channel effects like hot carrier effect, drain-induced barrier lowering and threshold voltage roll-off has also been examined along with subthreshold swing and drain current characteristics. Performance analysis of the present model is also demonstrated by comparing its short-channel behavior with conventional DGJL MOSFET. The effect of variation of the device features due to the variation of device parameters is also studied. The simulated results obtained using 2D device simulator, namely ATLAS, are in good agreement with the analytical results, hence validating our derived model.

Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

NASA Astrophysics Data System (ADS)

Ishii, Hajime; Ueno, Hiroaki; Ueda, Tetsuzo; Endoh, Tetsuo

2018-06-01

In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (I dmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% I dmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (g m) peak of the g m–V g characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Hsien; Chou, Wu-Ching, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw; Chang, Ting-Chang, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw

2014-10-21

This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of themore » surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I{sub D}-V{sub G} and modulated peak/base pulse time I{sub D}-V{sub D} measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.« less

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

NASA Astrophysics Data System (ADS)

Kim, Jungsik; Oh, Hyeongwan; Kim, Jiwon; Meyyappan, M.; Lee, Jeong-Soo

2017-02-01

Effects of using asymmetric channel thickness in tunneling field-effect transistors (TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) simulations. As the thickness of the source side becomes narrower in narrow-source wide-drain (NSWD) TFETs, the threshold voltage (V th) and the subthreshold swing (SS) decrease due to enhanced gate controllability of the source side. The narrow source thickness can make the band-to-band tunneling (BTBT) distance shorter and induce much higher electric field near the source junction at the on-state condition. In contrast, in a TFET with wide-source narrow-drain (WSND), the SS shows almost constant values and the V th slightly increases with narrowing thickness of the drain side. In addition, the ambipolar current can rapidly become larger with smaller thickness on the drain side because of the shorter BTBT distance and the higher electric-field at the drain junction. The on-current of the asymmetric channel TFET is lower than that of conventional TFETs due to the volume limitation of the NSWD TFET and high series resistance of the WSND TFET. The on-current is almost determined by the channel thickness of the source side.

Effect of abdominopelvic abscess drain size on drainage time and probability of occlusion

PubMed Central

Rotman, Jessica A.; Getrajdman, George I.; Maybody, Majid; Erinjeri, Joseph P.; Yarmohammadi, Hooman; Sofocleous, Constantinos T.; Solomon, Stephen B.; Boas, F. Edward

2016-01-01

Background The purpose of this study is to determine whether larger abdominopelvic abscess drains reduce the time required for abscess resolution, or the probability of tube occlusion. Methods 144 consecutive patients who underwent abscess drainage at a single institution were reviewed retrospectively. Results: Larger initial drain size did not reduce drainage time, drain occlusion, or drain exchanges (p>0.05). Subgroup analysis did not find any type of collection that benefitted from larger drains. A multivariate model predicting drainage time showed that large collections (>200 ml) required 16 days longer drainage time than small collections (<50 ml). Collections with a fistula to bowel required 17 days longer drainage time than collections without a fistula. Initial drain size and the viscosity of the fluid in the collection had no significant effect on drainage time in the multivariate model. Conclusions 8 F drains are adequate for initial drainage of most serous and serosanguineous collections. 10 F drains are adequate for initial drainage of most purulent or bloody collections. PMID:27634422

Controlling the ambipolarity and improvement of RF performance using Gaussian Drain Doped TFET

NASA Astrophysics Data System (ADS)

Nigam, Kaushal; Gupta, Sarthak; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

2018-05-01

Ambipolar conduction in tunnel field-effect transistors (TFETs) has been occurred as an inherent issue due to drain-channel tunneling. It makes TFET less efficient and restricts its application in complementary digital circuits. Therefore, this manuscript reports the application of Gaussian doping profile on nanometer regime silicon channel TFETs to completely eliminate the ambipolarity. For this, Gaussian doping is used in the drain region of conventional gate-drain overlap TFET to control the tunneling of electrons from the valence band of channel to the conduction band of drain. As a result, barrier width at the drain/channel junction increases significantly leading to the suppression of an ambipolar current even when higher doping concentration (1 ? 10 ? cm ?) is considered in the drain region. However, significant improvement in terms of RF figure-of-merits such as cut-off frequency (f ?), gain bandwidth product (GBW), and gate-to-drain capacitance (C ?) is achieved with Gaussian doped gate on drain overlap TFET as compared to its counterpart TFET.

Modeling of Sonos Memory Cell Erase Cycle

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeond, Todd C.; Ho, Fat D.

2010-01-01

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

Alternative to Agricultural Drains in California's San Joaquin Valley: Results of a Regional-Scale Hydrogeologic Approach

NASA Astrophysics Data System (ADS)

Belitz, Kenneth; Phillips, Steven P.

1995-08-01

The occurrence of selenium in agricultural drainage water derived from the central part of the western San Joaquin Valley has focused concern on alternatives to agricultural drains for managing shallow, poor-quality groundwater. A transient, three-dimensional simulation model was developed to evaluate the response of the water table to alternatives that affect recharge to or discharge from the groundwater flow system. The modeled area is 551 mi2 (1 mi2 = 2.59 km2) and includes both the semiconfined and confined zones above and below the Corcoran Clay Member of the Tulare Formation of Pleistocene age. The simulation model was calibrated using hydrologic data from 1972 to 1988, and was extended to the year 2040 to forecast for various management alternatives, including maintenance of present practices, land retirement, reduced recharge, increased groundwater pumping, and combinations of these alternatives. Maintenance of present practices results in a worsening of the situation: the total area subject to bare-soil evaporation increases from 224 mi2 in 1990 to 344 mi2 in 2040, and drain flow increases from 25,000 ac ft/yr (1 ac ft = 1234 m3) to 28,000 ac ft/yr. Although land retirement results in elimination of bare-soil evaporation and drain flow in the areas retired, it has little to no effect in adjacent areas. In contrast, regional-scale changes in recharge and pumping are effective for regional management. The area subject to bare-soil evaporation can be reduced to 78 mi2, and drain flow to 8000 ac ft/yr if (1) recharge is reduced by 15% (26,000 ac ft/yr) in areas that currently use surface and groundwater (362 mi2); (2) recharge is reduced by 40% (28,000 ac ft/yr) in areas that currently use only surface water (137 mi2); and (3) pumping rates are uniformly incremented by 0.5 ft/yr (160,000 ac ft/yr) in both areas. If these water budget changes were to be implemented in the study area, and in adjacent areas with similiar Hydrogeologic characteristics, then approximately 400,000 ac ft/yr of surface water would be made available. Thus a shift in the hydrologic budget in the central part of the western San Joaquin Valley improves the prospects for sustaining agriculture in the area, and could provide substantial water resources for other uses.

Current practice patterns of drain usage amongst UK and Irish surgeons performing bilateral breast reductions: Evidence down the drain.

PubMed

Sugrue, Conor M; McInerney, Niall; Joyce, Cormac W; Jones, Deidre; Hussey, Alan J; Kelly, Jack L; Kerin, Michael J; Regan, Padraic J

2015-01-01

Bilateral breast reduction (BBR) is one of the most frequently performed female breast operations. Despite no evidence supporting efficacy of drain usage in BBRs, postoperative insertion is common. Recent high quality evidence demonstrating potential harm from drain use has subsequently challenged this traditional practice. The aim of this study is to assess the current practice patterns of drains usage by Plastic & Reconstructive and Breast Surgeons in UK and Ireland performing BBRs. An 18 question survey was created evaluating various aspects of BBR practice. UK and Irish Plastic & Reconstructive and Breast Surgeons were invited to participate by an email containing a link to a web-based survey. Statistical analysis was performed with student t-test and chi-square test. Two hundred and eleven responding surgeons were analysed, including 80.1% (171/211) Plastic Surgeons and 18.9% (40/211) Breast Surgeons. Of the responding surgeons, 71.6% (151/211) routinely inserted postoperative drains, for a mean of 1.32 days. Drains were used significantly less by surgeons performing ≥20 BBRs (p = 0.02). With the majority of BBRs performed as an inpatient procedure, there was a trend towards less drain usage in surgeons performing this procedure as an outpatient; however, this was not statistically significant (p = 0.07). Even with the high level of evidence demonstrating the safety of BBR without drains, they are still routinely utilised. In an era of evidence- based medicine, surgeons performing breast reductions must adopt the results from scientific research into their clinical practice.

Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

NASA Astrophysics Data System (ADS)

Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour

NASA Astrophysics Data System (ADS)

Jain, Prateek; Yadav, Chandan; Agarwal, Amit; Chauhan, Yogesh Singh

2017-08-01

We present a surface potential based analytical model for double gate tunnel field effect transistor (DGTFET) for the current, terminal charges, and terminal capacitances. The model accounts for the effect of the mobile charge in the channel and captures the device physics in depletion as well as in the strong inversion regime. The narrowing of the tunnel barrier in the presence of mobile charges in the channel is incorporated via modeling of the inverse decay length, which is constant under channel depletion condition and bias dependent under inversion condition. To capture the ambipolar current behavior in the model, tunneling at the drain junction is also included. The proposed model is validated against TCAD simulation data and it shows close match with the simulation data.

An AlN/Al 0.85Ga 0.15N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-22

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85Ga 0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on/I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion,more » the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.« less

An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-18

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminalmore » off-state drain current was adequately modeled with Frenkel-Poole emission.« less

Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

NASA Astrophysics Data System (ADS)

Kim, Heesang; Oh, Byoungchan; Kim, Kyungdo; Cha, Seon-Yong; Jeong, Jae-Goan; Hong, Sung-Joo; Lee, Jong-Ho; Park, Byung-Gook; Shin, Hyungcheol

2010-09-01

We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxide-semiconductor field-effect transistors (MOSFETs).

Prescribing Control in Mixed Conifer Stands Affected by Annosus Root Disease

Treesearch

Gary Petersen

1989-01-01

Tree mortality caused by root diseases constitutes a major drain on Forest productivity of mixed-conifer stands. Factors such as changes in species composition, selective harvesting, unfavorable economic climate, and optimizing of short-term benefits have contributed to current stand conditions. Computer simulation models, such as the "RRMOD Computerized Root...

Effect of abdominopelvic abscess drain size on drainage time and probability of occlusion.

PubMed

Rotman, Jessica A; Getrajdman, George I; Maybody, Majid; Erinjeri, Joseph P; Yarmohammadi, Hooman; Sofocleous, Constantinos T; Solomon, Stephen B; Boas, F Edward

2017-04-01

The purpose of this study is to determine whether larger abdominopelvic abscess drains reduce the time required for abscess resolution or the probability of tube occlusion. 144 consecutive patients who underwent abscess drainage at a single institution were reviewed retrospectively. Larger initial drain size did not reduce drainage time, drain occlusion, or drain exchanges (P > .05). Subgroup analysis did not find any type of collection that benefitted from larger drains. A multivariate model predicting drainage time showed that large collections (>200 mL) required 16 days longer drainage time than small collections (<50 mL). Collections with a fistula to bowel required 17 days longer drainage time than collections without a fistula. Initial drain size and the viscosity of the fluid in the collection had no significant effect on drainage time in the multivariate model. 8 F drains are adequate for initial drainage of most serous and serosanguineous collections. 10 F drains are adequate for initial drainage of most purulent or bloody collections. Copyright © 2016 Elsevier Inc. All rights reserved.

A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-03-01

In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Dong-Suk; Kang, Yu-Jin; Park, Jae-Hyung

Highlights: • We developed and investigated source/drain electrodes in oxide TFTs. • The Mo S/D electrodes showed good output characteristics. • Intrinsic TFT parameters were calculated by the transmission line method. - Abstract: This paper investigates the feasibility of a low-resistivity electrode material (Mo) for source/drain (S/D) electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain electrodes and amorphous zinc–tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Momore » source/drain electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm{sup 2}/V s. In spite of slight current crowding effects, the Mo source/drain electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V{sub DS}) region.« less

Performance improvement of doped TFET by using plasma formation concept

NASA Astrophysics Data System (ADS)

Soni, Deepak; Sharma, Dheeraj; Yadav, Shivendra; Aslam, Mohd.; Sharma, Neeraj

2018-01-01

Formation of abrupt doping profile at tunneling junction for the nanoscale tunnel field effect transistor (TFET) is a critical issue for attaining improved electrical behaviour. The realization of abrupt doping profile is more difficult in the case of physically doped TFETs due to material solubility limit. In this concern, we propose a novel design of TFET. For this, P+ (source)-I (channel)-N (drain) type structure has been considered, wherein a metal electrode is deposited over the source region. In addition to this, a negative voltage is applied to the source electrode (SE). It induces the surface plasma layer of holes in the source region, which is responsible for steepness in the bands at source/channel junction and provides the advantage of higher doping in source region without any addition of the physical impurity. The proposed modification is helpful for achieving steeper band bending at the source/channel interface, which enables higher tunneling generation rate of charge carriers at this interface and overcomes the issue of low ON-state current. Thus, the proposed device shows the increment of 2 decades in drain current and 252 mV reduction in threshold voltage compared with conventional device. The optimization of spacer length (LSG) between source/gate (LSG) and applied negative voltage (Vpg) over source electrode have been performed to obtain optimum drain current and threshold voltage (Vth). Further, for the suppression of ambipolar current, drain region is kept lightly doped, which reduces the ambipolar current up to level of Off state current. Moreover, in the proposed device gate electrode is underlapped for improving RF performance. It also reduces gate to drain capacitances (Cgd) and increases cut-off-frequency (fT), fmax, GBP, TFP. In addition to these, linearity analysis has been performed to validate the applicability of the device.

Modeling the effects of tile drain placement on the hydrologic function of farmed prairie wetlands

USGS Publications Warehouse

Werner, Brett; Tracy, John; Johnson, W. Carter; Voldseth, Richard A.; Guntenspergen, Glenn R.; Millett, Bruce

2016-01-01

The early 2000s saw large increases in agricultural tile drainage in the eastern Dakotas of North America. Agricultural practices that drain wetlands directly are sometimes limited by wetland protection programs. Little is known about the impacts of tile drainage beyond the delineated boundaries of wetlands in upland catchments that may be in agricultural production. A series of experiments were conducted using the well-published model WETLANDSCAPE that revealed the potential for wetlands to have significantly shortened surface water inundation periods and lower mean depths when tile is placed in certain locations beyond the wetland boundary. Under the soil conditions found in agricultural areas of South Dakota in North America, wetland hydroperiod was found to be more sensitive to the depth that drain tile is installed relative to the bottom of the wetland basin than to distance-based setbacks. Because tile drainage can change the hydrologic conditions of wetlands, even when deployed in upland catchments, tile drainage plans should be evaluated more closely for the potential impacts they might have on the ecological services that these wetlands currently provide. Future research should investigate further how drainage impacts are affected by climate variability and change.

Simulation model for electron irradiated IGZO thin film transistors

NASA Astrophysics Data System (ADS)

Dayananda, G. K.; Shantharama Rai, C.; Jayarama, A.; Kim, Hyun Jae

2018-02-01

An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

Effects of tillage and application rate on atrazine transport to subsurface drainage: Evaluation of RZWQM using a six-year field study

USGS Publications Warehouse

Malone, Robert W.; Nolan, Bernard T.; Ma, Liwang; Kanwar, Rameshwar S.; Pederson, Carl H.; Heilman, Philip

2014-01-01

Well tested agricultural system models can improve our understanding of the water quality effects of management practices under different conditions. The Root Zone Water Quality Model (RZWQM) has been tested under a variety of conditions. However, the current model's ability to simulate pesticide transport to subsurface drain flow over a long term period under different tillage systems and application rates is not clear. Therefore, we calibrated and tested RZWQM using six years of data from Nashua, Iowa. In this experiment, atrazine was spring applied at 2.8 (1990–1992) and 0.6 kg/ha/yr (1993–1995) to two 0.4 ha plots with different tillage (till and no-till). The observed and simulated average annual flow weighted atrazine concentrations (FWAC) in subsurface drain flow from the no-till plot were 3.7 and 3.2 μg/L, respectively for the period with high atrazine application rates, and 0.8 and 0.9 μg/L, respectively for the period with low application rates. The 1990–1992 observed average annual FWAC difference between the no-till and tilled plot was 2.4 μg/L while the simulated difference was 2.1 μg/L. These observed and simulated differences for 1993–1995 were 0.1 and 0.1 μg/L, respectively. The Nash–Sutcliffe model performance statistic (EF) for cumulative atrazine flux to subsurface drain flow was 0.93 for the no-till plot testing years (1993–1995), which is comparable to other recent model tests. The value of EF is 1.0 when simulated data perfectly match observed data. The order of selected parameter sensitivity for RZWQM simulated FWAC was atrazine partition coefficient > number of macropores > atrazine half life in soil > soil hydraulic conductivity. Simulations from 1990 to 1995 with four different atrazine application rates applied at a constant rate throughout the simulation period showed concentrations in drain flow for the no-till plot to be twice those of the tilled plot. The differences were more pronounced in the early simulation period (1990–1992), partly because of the characteristics of macropore flow during large storms. The results suggest that RZWQM is a promising tool to study pesticide transport to subsurface drain flow under different tillage systems and application rates over several years, the concentrations of atrazine in drain flow can be higher with no-till than tilled soil over a range of atrazine application rates, and atrazine concentrations in drain flow are sensitive to the macropore flow characteristics under different tillage systems and rainfall timing and intensity.

Analysis of source/drain engineered 22nm FDSOI using high-k spacers

NASA Astrophysics Data System (ADS)

Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

While looking at the current classical scaling of devices there are lots of short channel effects come into consideration. In this paper, a novel device structure is proposed that is an improved structure of Modified Source(MS) FDSOI in terms of better electrical performance, on current and reduced off state leakage current with a higher Ion/Ioff ratio that helps in fast switching of low power nano electronic devices. Proposed structure has Modified drain and source regions with two different type to doping profile at 22nm gate length. In the upper part of engineered region (MD and MS) the doping concentration is kept high and less in the lower region. The purpose was to achieve low parasitic capacitance in source and drain region by reducing doping concentration [1].

Printable organic thin film transistors for glucose detection incorporating inkjet-printing of the enzyme recognition element

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elkington, D., E-mail: Daniel.Elkington@newcastle.edu.au; Wasson, M.; Belcher, W.

The effect of device architecture upon the response of printable enzymatic glucose sensors based on poly(3-hexythiophene) (P3HT) organic thin film transistors is presented. The change in drain current is used as the basis for glucose detection and we show that significant improvements in drain current response time can be achieved by modifying the design of the sensor structure. In particular, we show that eliminating the dielectric layer and reducing the thickness of the active layer reduce the device response time considerably. The results are in good agreement with a diffusion based model of device operation, where an initial rapid dedopingmore » process is followed by a slower doping of the P3HT layer from protons that are enzymatically generated by glucose oxidase (GOX) at the Nafion gate electrode. The fitted diffusion data are consistent with a P3HT doping region that is close to the source-drain electrodes rather than located at the P3HT:[Nafion:GOX] interface. Finally, we demonstrate that further improvements in sensor structure and morphology can be achieved by inkjet-printing the GOX layer, offering a pathway to low-cost printed biosensors for the detection of glucose in saliva.« less

Restructuring brain drain: strengthening governance and financing for health worker migration.

PubMed

Mackey, Tim K; Liang, Bryan A

2013-01-15

Health worker migration from resource-poor countries to developed countries, also known as ''brain drain'', represents a serious global health crisis and a significant barrier to achieving global health equity. Resource-poor countries are unable to recruit and retain health workers for domestic health systems, resulting in inadequate health infrastructure and millions of dollars in healthcare investment losses. Using acceptable methods of policy analysis, we first assess current strategies aimed at alleviating brain drain and then propose our own global health policy based solution to address current policy limitations. Although governments and private organizations have tried to address this policy challenge, brain drain continues to destabilise public health systems and their populations globally. Most importantly, lack of adequate financing and binding governance solutions continue to fail to prevent health worker brain drain. In response to these challenges, the establishment of a Global Health Resource Fund in conjunction with an international framework for health worker migration could create global governance for stable funding mechanisms encourage equitable migration pathways, and provide data collection that is desperately needed.

Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.

PubMed

Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lian-Mao

2015-01-27

Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.

A novel explicit approach to model bromide and pesticide transport in connected soil structures

NASA Astrophysics Data System (ADS)

Klaus, J.; Zehe, E.

2011-07-01

The present study tests whether an explicit treatment of worm burrows and tile drains as connected structures is feasible for simulating water flow, bromide and pesticide transport in structured heterogeneous soils at hillslope scale. The essence is to represent worm burrows as morphologically connected paths of low flow resistance in a hillslope model. A recent Monte Carlo study (Klaus and Zehe, 2010, Hydrological Processes, 24, p. 1595-1609) revealed that this approach allowed successful reproduction of tile drain event discharge recorded during an irrigation experiment at a tile drained field site. However, several "hillslope architectures" that were all consistent with the available extensive data base allowed a good reproduction of tile drain flow response. Our second objective was thus to find out whether this "equifinality" in spatial model setups may be reduced when including bromide tracer data in the model falsification process. We thus simulated transport of bromide for the 13 spatial model setups that performed best with respect to reproduce tile drain event discharge, without any further calibration. All model setups allowed a very good prediction of the temporal dynamics of cumulated bromide leaching into the tile drain, while only four of them matched the accumulated water balance and accumulated bromide loss into the tile drain. The number of behavioural model architectures could thus be reduced to four. One of those setups was used for simulating transport of Isoproturon, using different parameter combinations to characterise adsorption according to the Footprint data base. Simulations could, however, only reproduce the observed leaching behaviour, when we allowed for retardation coefficients that were very close to one.

A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Han, Chang-Wook; Han, Min-Koo; Choi, Nack-Bong; Kim, Chang-Dong; Kim, Ki-Yong; Chung, In-Jae

2007-07-01

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a flexible stainless-steel (SS) substrate. The stability of the a-Si:H TFT is a key issue for active matrix organic light-emitting diodes (AMOLEDs). The drain current decreases because of the threshold voltage shift (Δ VTH) during OLED driving. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and the gate electrode without additional circuits. The negative voltage biased at the SS substrate can recover Δ VTH and reduced drain current of the driving TFT. The VTH of the TFT increased by 2.3 V under a gate bias of +15 V and a drain bias of +15 V at 65 °C applied for 3,500 s. The VTH decreased by -2.3 V and the drain current recovered 97% of its initial value under a substrate bias of -23 V at 65 °C applied for 3,500 s.

A Brain-Machine-Brain Interface for Rewiring of Cortical Circuitry after Traumatic Brain Injury

DTIC Science & Technology

2011-09-01

cerebral cortex of a rat’s brain. The flow chart for spike discrimination algorithm is also shown. Negative threshold level (not shown in bottom left...portion of the transistor drain current can flow into its bulk due to impact ionization effect [40], greatly degrading the output impedance of the...current source. This can be solved by connecting the bulk and source of together, as also seen in Fig. 4, allowing its drain-bulk current to also flow

Investigation of defect-induced abnormal body current in fin field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin

2015-08-24

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Advances in chest drain management in thoracic disease

PubMed Central

George, Robert S.

2016-01-01

An adequate chest drainage system aims to drain fluid and air and restore the negative pleural pressure facilitating lung expansion. In thoracic surgery the post-operative use of the conventional underwater seal chest drainage system fulfills these requirements, however they allow great variability amongst practices. In addition they do not offer accurate data and they are often inconvenient to both patients and hospital staff. This article aims to simplify the myths surrounding the management of chest drains following chest surgery, review current experience and explore the advantages of modern digital chest drain systems and address their disease-specific use. PMID:26941971

Generation of airborne Listeria innocua from model floor drains.

PubMed

Berrang, Mark E; Frank, Joseph F

2012-07-01

Listeria monocytogenes can colonize floor drains in poultry processing and further processing facilities, remaining present even after cleaning and disinfection. Therefore, during wash down, workers exercise caution to avoid spraying hoses directly into drains in an effort to prevent the escape and transfer of drain microflora to food contact surfaces. The objective of this study was to examine the extent to which an inadvertent water spray into a colonized floor drain can cause the spread of airborne Listeria. Listeria innocua was used to inoculate a polyvinyl chloride model floor drain, resulting in approximately 10(8) cells per ml of phosphate-buffered saline and 10(4) attached cells per square centimeter of inner surface. Each model drain was subjected to a 2-s spray of tap water at 68.9 kPa from a distance of 1 m. Drains were sprayed while filled and again after emptying. Airborne cells were collected by using sedimentation plates containing Listeria selective agar which were placed on the floor and walls of a contained room at incremental horizontal and vertical distances of 0.6, 1.2, 2.4, or 4.0 m from the drain. Sedimentation plates were exposed for 10 min. A mechanical sampler was used to also collect air by impaction on the surface of Listeria selective agar to determine the number of cells per liter of air. The experiment was conducted in triplicate rooms for each of four replications. L. innocua was detected on sedimentation plates on the floor as far as 4.0 m from the drain and on walls as high as 2.4 m above the floor and 4 m from the drain. A 2-s spray with a water hose into a contaminated drain can cause airborne spread of Listeria, resulting in the potential for cross-contamination of food contact surfaces, equipment, and exposed product.

Potential depletion of surface water in the Colorado River and agricultural drains by groundwater pumping in the Parker-Palo Verde-Cibola area, Arizona and California

USGS Publications Warehouse

Leake, Stanley A.; Owen-Joyce, Sandra J.; Heilman, Julian A.

2013-01-01

Water use along the lower Colorado River is allocated as “consumptive use,” which is defined to be the amount of water diverted from the river minus the amount that returns to the river. Diversions of water from the river include surface water in canals and water removed from the river by pumping wells in the aquifer connected to the river. A complication in accounting for water pumped by wells occurs if the pumping depletes water in drains and reduces measured return flow in those drains. In that case, consumptive use of water pumped by the wells is accounted for in the reduction of measured return flow. A method is needed to understand where groundwater pumping will deplete water in the river and where it will deplete water in drains. To provide a basis for future accounting for pumped groundwater in the Parker-Palo Verde-Cibola area, a superposition model was constructed. The model consists of three layers of finite-difference cells that cover most of the aquifer in the study area. The model was run repeatedly with each run having a pumping well in a different model cell. The source of pumped water that is depletion of the river, expressed as a fraction of the pumping rate, was computed for all active cells in model layer 1, and maps were constructed to understand where groundwater pumping depletes the river and where it depletes drains. The model results indicate that if one or more drains exist between a pumping well location and the river, nearly all of the depletion will be from drains, and little or no depletion will come from the Colorado River. Results also show that if a well pumps on a side of the river with no drains in the immediate area, depletion will come from the Colorado River. Finally, if a well pumps between the river and drains that parallel the river, a fraction of the pumping will come from the river and the rest will come from the drains. Model results presented in this report may be considered in development or refinement of strategies for accounting for groundwater pumping in the river aquifer connected to the Colorado River in the study area.

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

Towards evidence-based emergency medicine: best BETs from the Manchester Royal Infirmary. BET 4: does size matter? Chest drains in haemothorax following trauma.

PubMed

2013-11-01

A short-cut review was carried out to establish whether the size of chest drain inserted is important in haemothoraces. Forty-nine papers were found of which four presented the best evidence to answer the clinical question. The author, date and country of publication, patient group studied, study type, relevant outcomes, results and study weaknesses of these best papers are shown in table 4. The clinical bottom line is that while the available evidence suggests that small bore drains may be as effective as large bore drains in resolving traumatic haemothoraces without additional complications, there is insufficient evidence currently available to recommend a change to standard practice (ie, large bore drains).

Chemically assembled double-dot single-electron transistor analyzed by the orthodox model considering offset charge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kano, Shinya; Maeda, Kosuke; Majima, Yutaka, E-mail: majima@msl.titech.ac.jp

2015-10-07

We present the analysis of chemically assembled double-dot single-electron transistors using orthodox model considering offset charges. First, we fabricate chemically assembled single-electron transistors (SETs) consisting of two Au nanoparticles between electroless Au-plated nanogap electrodes. Then, extraordinary stable Coulomb diamonds in the double-dot SETs are analyzed using the orthodox model, by considering offset charges on the respective quantum dots. We determine the equivalent circuit parameters from Coulomb diamonds and drain current vs. drain voltage curves of the SETs. The accuracies of the capacitances and offset charges on the quantum dots are within ±10%, and ±0.04e (where e is the elementary charge),more » respectively. The parameters can be explained by the geometrical structures of the SETs observed using scanning electron microscopy images. Using this approach, we are able to understand the spatial characteristics of the double quantum dots, such as the relative distance from the gate electrode and the conditions for adsorption between the nanogap electrodes.« less

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

NASA Astrophysics Data System (ADS)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Modeling the long-term effect of winter cover crops on nitrate transport in artificially drained fields across the Midwest U.S.

USDA-ARS?s Scientific Manuscript database

A fall-planted cover crop is a management practice with multiple benefits including reducing nitrate losses from artificially drained fields. We used the Root Zone Water Quality Model (RZWQM) to simulate the impact of a cereal rye cover crop on reducing nitrate losses from drained fields across five...

Efficiency of lithium pacemaker batteries as a function of discharge rate and iodine:P2VP cathode composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Helgeson, W.D.; Fester, K.E.

1980-01-01

Electrochemical discharge data for Li/I/sub 2/-P2VP pacemaker batteries at various discharge currents show the efficiency of the battery to be a function of discharge current. Depending on the iodine:P2VP cathode composition, the optimum current drain occurs between discharge currents of 100 to 200 /mu/a. As current drain is reduced to pacemaker application drains, 15-25 /mu/a, the efficiency of the Li/I/sub 2/-P2VP battery decreases. The loss in efficiency at pacemaker rates is attributed primarily to self-discharge. The efficiency of Li/I/sub 2/-P2VP batteries is improved by increasing the percent of iodine in the cathode. I/sub 2/:P2VP weight ratios of 10:1, 15:1 andmore » 20:1 have been discharged at various currents and the data indicate that there is significant improvement in efficiency at pacemaker rate in going from 10:1 to 20:1 cathode weight ratio. 2 refs.« less

Preliminary Chaotic Model of Snapover on High Voltage Solar Cells

NASA Technical Reports Server (NTRS)

Mackey, Willie R.

1995-01-01

High voltage power systems in space will interact with the space plasma in a variety of ways. One of these, Snapover, is characterized by a sudden enlargement of the electron current collection area across normally insulating surfaces. A power drain on solar array power systems will results from this enhanced current collection. Optical observations of the snapover phenomena in the laboratory indicates a functional relation between bia potential and surface glow area. This paper shall explore the potential benefits of modeling the relation between current and bia potential as an aspect of bifurcation analysis in chaos theory. Successful characterizations of snapover as a chaotic phenomena may provide a means of snapover prevention and control through chaotic synchronization.

Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density

NASA Astrophysics Data System (ADS)

Li, Kexin; Rakheja, Shaloo

2017-02-01

In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

Integrated modeling of storm drain and natural channel networks for real-time flash flood forecasting in large urban areas

NASA Astrophysics Data System (ADS)

Habibi, H.; Norouzi, A.; Habib, A.; Seo, D. J.

2016-12-01

To produce accurate predictions of flooding in urban areas, it is necessary to model both natural channel and storm drain networks. While there exist many urban hydraulic models of varying sophistication, most of them are not practical for real-time application for large urban areas. On the other hand, most distributed hydrologic models developed for real-time applications lack the ability to explicitly simulate storm drains. In this work, we develop a storm drain model that can be coupled with distributed hydrologic models such as the National Weather Service Hydrology Laboratory's Distributed Hydrologic Model, for real-time flash flood prediction in large urban areas to improve prediction and to advance the understanding of integrated response of natural channels and storm drains to rainfall events of varying magnitude and spatiotemporal extent in urban catchments of varying sizes. The initial study area is the Johnson Creek Catchment (40.1 km2) in the City of Arlington, TX. For observed rainfall, the high-resolution (500 m, 1 min) precipitation data from the Dallas-Fort Worth Demonstration Network of the Collaborative Adaptive Sensing of the Atmosphere radars is used.

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

NASA Astrophysics Data System (ADS)

Kuzmík, J.; Pogany, D.; Gornik, E.; Javorka, P.; Kordoš, P.

2004-02-01

We study degradation mechanisms in 50 μm gate width/0.45 μm length AlGaN/GaN HEMTs after electrical overstresses. One hundred nanosecond long rectangular current pulses are applied on the drain contact keeping either both of the source and gate grounded or the source grounded and gate floating. Source-drain pulsed I- V characteristics show similar shape for both connections. After the HEMT undergoes the source-drain breakdown, a negative differential resistance region transits into a low voltage/high current region. Changes in the Schottky contact dc I- V characteristics and in the source and drain ohmic contacts are investigated as a function of the current stress level and are related to the HEMT dc performance. Catastrophic HEMT degradation was observed after Istress=1.65 A in case of the 'gate floating' connection due to ohmic contacts burnout. In case of the 'gate grounded' connection, Istress=0.45 A was sufficient for the gate failure showing a high gate susceptibility to overstress. Backside transient interferometric mapping technique experiment reveals a current filament formation under both HEMT stress connections. Infrared camera observations lead to conclusion that the filament formation together with a consequent high-density electron flow is responsible for a dark spot formation and gradual ohmic contact degradation.

Extended behavioural modelling of FET and lattice-mismatched HEMT devices

NASA Astrophysics Data System (ADS)

Khawam, Yahya; Albasha, Lutfi

2017-07-01

This study presents an improved large signal model that can be used for high electron mobility transistors (HEMTs) and field effect transistors using measurement-based behavioural modelling techniques. The steps for accurate large and small signal modelling for transistor are also discussed. The proposed DC model is based on the Fager model since it compensates between the number of model's parameters and accuracy. The objective is to increase the accuracy of the drain-source current model with respect to any change in gate or drain voltages. Also, the objective is to extend the improved DC model to account for soft breakdown and kink effect found in some variants of HEMT devices. A hybrid Newton's-Genetic algorithm is used in order to determine the unknown parameters in the developed model. In addition to accurate modelling of a transistor's DC characteristics, the complete large signal model is modelled using multi-bias s-parameter measurements. The way that the complete model is performed is by using a hybrid multi-objective optimisation technique (Non-dominated Sorting Genetic Algorithm II) and local minimum search (multivariable Newton's method) for parasitic elements extraction. Finally, the results of DC modelling and multi-bias s-parameters modelling are presented, and three-device modelling recommendations are discussed.

Identification of glacial meltwater runoff in a karstic environment and its implication for present and future water availability

NASA Astrophysics Data System (ADS)

Finger, D.; Hugentobler, A.; Huss, M.; Voinesco, A.; Wernli, H.; Fischer, D.; Weber, E.; Jeannin, P.-Y.; Kauzlaric, M.; Wirz, A.; Vennemann, T.; Hüsler, F.; Schädler, B.; Weingartner, R.

2013-08-01

Glaciers all over the world are expected to continue to retreat due to the global warming throughout the 21st century. Consequently, future seasonal water availability might become scarce once glacier areas have declined below a certain threshold affecting future water management strategies. Particular attention should be paid to glaciers located in a karstic environment, as parts of the meltwater can be drained by underlying karst systems, making it difficult to assess water availability. In this study tracer experiments, karst modeling and glacier melt modeling are combined in order to identify flow paths in a high alpine, glacierized, karstic environment (Glacier de la Plaine Morte, Switzerland) and to investigate current and predict future downstream water availability. Flow paths through the karst underground were determined with natural and fluorescent tracers. Subsequently, geologic information and the findings from tracer experiments were assembled in a karst model. Finally, glacier melt projections driven with a climate scenario were performed to discuss future water availability in the area surrounding the glacier. The results suggest that during late summer glacier meltwater is rapidly drained through well-developed channels at the glacier bottom to the north of the glacier, while during low flow season meltwater enters into the karst and is drained to the south. Climate change projections with the glacier melt model reveal that by the end of the century glacier melt will be significantly reduced in the summer, jeopardizing water availability in glacier-fed karst springs.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Threshold Voltage Instability in A-Si:H TFTS and the Implications for Flexible Displays and Circuits

DTIC Science & Technology

2008-12-01

and negative gate voltages with and without elevated drain voltages for FDC TFTs. Extending techniques used to localize hot electron degradation...in MOSFETs, experiments in our lab have localized the degradation of a-Si:H to the gate dielectric/a-Si:H channel interface [Shringarpure, et al...saturation, increased drain source current measured with the source and drain reversed indicates localization of ΔVth to the gate dielectric/amorphous

Analytical model of surface potential profiles and transfer characteristics for hetero stacked tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Hui Fang; Sun, Wen; Han, Xin Feng

2018-06-01

An analytical model of surface potential profiles and transfer characteristics for hetero stacked tunnel field-effect transistors (HS-TFETs) is presented for the first time, where hetero stacked materials are composed of two different bandgaps. The bandgap of the underlying layer is smaller than that of the upper layer. Under different device parameters (upper layer thickness, underlying layer thickness, and hetero stacked materials) and temperature, the validity of the model is demonstrated by the agreement of its results with the simulation results. Moreover, the results show that the HS-TFETs can obtain predominant performance with relatively slow changes of subthreshold swing (SS) over a wide drain current range, steep average subthreshold swing, high on-state current, and large on–off state current ratio.

Fluidic nanotubes and devices

DOEpatents

Yang, Peidong [Berkeley, CA; He, Rongrui [El Cerrito, CA; Goldberger, Joshua [Berkeley, CA; Fan, Rong [El Cerrito, CA; Wu, Yiying [Albany, CA; Li, Deyu [Albany, CA; Majumdar, Arun [Orinda, CA

2008-04-08

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Fluidic nanotubes and devices

DOEpatents

Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

2010-01-10

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

NASA Astrophysics Data System (ADS)

Ichino, Shinya; Mawaki, Takezo; Teramoto, Akinobu; Kuroda, Rihito; Park, Hyeonwoo; Wakashima, Shunichi; Goto, Tetsuya; Suwa, Tomoyuki; Sugawa, Shigetoshi

2018-04-01

Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a floor noise of 35 µV rms. In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

Multiple-channel detection of cellular activities by ion-sensitive transistors

NASA Astrophysics Data System (ADS)

Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

2018-04-01

An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Yang, Zhaonian; Zhang, Yue; Yang, Yuan; Yu, Ningmei

2017-11-01

Tunnel field-effect transistor (TFET) is very attractive in replacing a MOSFET, particularly for low-power nanoelectronic circuits. The U-shaped channel TFET (U-TFET) was proposed to improve the drain-source current with a reduced footprint. In this work, the impact of the source height (HS) on the characteristic of the U-shaped channel tunnel field-effect transistor (U-TFET) is investigated by using TCAD simulation. It is found that with a fixed gate height (HG) the drain-source current has a negative correlation with HS. This is because when the gate region is deeper than the source region, the electric field near the corner of the tunneling junction can be enhanced and the tunneling rate is increased. When HS becomes very thin, the drain-source current is limited by the source region volume. The U-TFET with an n+ pocket is also studied and the same trend is observed.

Fabrication of resistively-coupled single-electron device using an array of gold nanoparticles

NASA Astrophysics Data System (ADS)

Huong, Tran Thi Thu; Matsumoto, Kazuhiko; Moriya, Masataka; Shimada, Hiroshi; Kimura, Yasuo; Hirano-Iwata, Ayumi; Mizugaki, Yoshinao

2017-08-01

We demonstrated one type of single-electron device that exhibited electrical characteristics similar to those of resistively-coupled SE transistor (R-SET) at 77 K and room temperature (287 K). Three Au electrodes on an oxidized Si chip served as drain, source, and gate electrodes were formed using electron-beam lithography and evaporation techniques. A narrow (70-nm-wide) gate electrode was patterned using thermal evaporation, whereas wide (800-nm-wide) drain and source electrodes were made using shadow evaporation. Subsequently, aqueous solution of citric acid and 15-nm-diameter gold nanoparticles (Au NPs) and toluene solution of 3-nm-diameter Au NPs chemisorbed via decanethiol were dropped on the chip to make the connections between the electrodes. Current-voltage characteristics between the drain and source electrodes exhibited Coulomb blockade (CB) at both 77 and 287 K. Dependence of the CB region on the gate voltage was similar to that of an R-SET. Simulation results of the model based on the scanning electron microscopy image of the device could reproduce the characteristics like the R-SET.

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Fukuda, Koichi; Liu, Yongxun; Mori, Takahiro; Mizubayashi, Wataru; O'uchi, Shin-ichi; Fuketa, Hiroshi; Otsuka, Shintaro; Migita, Shinji; Masahara, Meishoku; Endo, Kazuhiko; Ota, Hiroyuki; Matsukawa, Takashi

2017-04-01

We have demonstrated the operation of a CMOS inverter consisting of Si tunnel FinFETs. Both p- and n-type tunnel FinFETs are successfully fabricated and operated on the same SOI wafer. The current mismatch between p- and n-type tunnel FETs is compensated by tuning the number of fin channels. Very low short-circuit current and clear voltage input-output characteristics are obtained. The thin epitaxial channel in the tunnel FinFETs effectively increases the drain current and accordingly reduces the drain capacitance, which could help high-performance tunnel FET CMOS inverter operation.

Improved simulation of poorly drained forests using Biome-BGC.

PubMed

Bond-Lamberty, Ben; Gower, Stith T; Ahl, Douglas E

2007-05-01

Forested wetlands and peatlands are important in boreal and terrestrial biogeochemical cycling, but most general-purpose forest process models are designed and parameterized for upland systems. We describe changes made to Biome-BGC, an ecophysiological process model, that improve its ability to simulate poorly drained forests. Model changes allowed for: (1) lateral water inflow from a surrounding watershed, and variable surface and subsurface drainage; (2) adverse effects of anoxic soil on decomposition and nutrient mineralization; (3) closure of leaf stomata in flooded soils; and (4) growth of nonvascular plants (i.e., bryophytes). Bryophytes were treated as ectohydric broadleaf evergreen plants with zero stomatal conductance, whose cuticular conductance to CO(2) was dependent on plant water content. Individual model changes were parameterized with published data, and ecosystem-level model performance was assessed by comparing simulated output to field data from the northern BOREAS site in Manitoba, Canada. The simulation of the poorly drained forest model exhibited reduced decomposition and vascular plant growth (-90%) compared with that of the well-drained forest model; the integrated bryophyte photosynthetic response accorded well with published data. Simulated net primary production, biomass and soil carbon accumulation broadly agreed with field measurements, although simulated net primary production was higher than observed data in well-drained stands. Simulated net primary production in the poorly drained forest was most sensitive to oxygen restriction on soil processes, and secondarily to stomatal closure in flooded conditions. The modified Biome-BGC remains unable to simulate true wetlands that are subject to prolonged flooding, because it does not track organic soil formation, water table changes, soil redox potential or anaerobic processes.

A novel explicit approach to model bromide and pesticide transport in soils containing macropores

NASA Astrophysics Data System (ADS)

Klaus, J.; Zehe, E.

2011-01-01

The present study tests whether an explicit treatment of worm burrows is feasible for simulating water flow, bromide and pesticide transport in structured heterogeneous soils. The essence is to represent worm burrows as morphologically connected paths of low flow resistance in the spatially highly resolved model domain. A recent Monte Carlo study (Klaus and Zehe, 2010) revealed that this approach allowed successful reproduction of tile drain event discharge recorded during an irrigation experiment at a tile drained field site. However, several "hillslope architectures" that were all consistent with the available extensive data base allowed a good reproduction of tile drain flow response. Our second objective was thus to find out whether this "equifinality" in spatial model setups may be reduced when including bromide tracer data in the model falsification process. We thus simulated transport of bromide and Isoproturon (IPU) for the 13 spatial model setups, which performed best with respect to reproduce tile drain event discharge, without any further calibration. All model setups allowed a very good prediction of the temporal dynamics of cumulated bromide leaching into the tile drain, while only four of them matched the accumulated water balance and accumulated bromide loss into the tile drain. The number of behavioural model architectures could thus be reduced to four. One of those setups was used for simulating transport of IPU, using different parameter combinations to characterise adsorption according to the Footprint data base. Simulations could, however, only reproduce the observed leaching behaviour, when we allowed for retardation coefficients that were very close to one.

Establishment and application of the estimation model for pollutant concentrfation in agriculture drain

NASA Astrophysics Data System (ADS)

Li, Qiangkun; Hu, Yawei; Jia, Qian; Song, Changji

2018-02-01

It is the key point of quantitative research on agricultural non-point source pollution load, the estimation of pollutant concentration in agricultural drain. In the guidance of uncertainty theory, the synthesis of fertilization and irrigation is used as an impulse input to the farmland, meanwhile, the pollutant concentration in agricultural drain is looked as the response process corresponding to the impulse input. The migration and transformation of pollutant in soil is expressed by Inverse Gaussian Probability Density Function. The law of pollutants migration and transformation in soil at crop different growth periods is reflected by adjusting parameters of Inverse Gaussian Distribution. Based on above, the estimation model for pollutant concentration in agricultural drain at field scale was constructed. Taking the of Qing Tong Xia Irrigation District in Ningxia as an example, the concentration of nitrate nitrogen and total phosphorus in agricultural drain was simulated by this model. The results show that the simulated results accorded with measured data approximately and Nash-Sutcliffe coefficients were 0.972 and 0.964, respectively.

[Outpatient Drain Management in Patients with Clinically Relevant Postoperative Pancreatic Fistula (CR-POPF) - Current Status in Germany].

PubMed

Hempel, Sebastian; Püttmann, Pamela; Kahlert, Christoph; Seifert, Lena; Mees, Sören Torge; Welsch, Thilo; Weitz, Jürgen; Distler, Marius

2018-06-01

Postoperative pancreatic fistula (POPF) is a common complication after pancreatic surgery and is associated with extended hospitalisation, increased medical costs, and reduced quality of life. The aim of the present study was to assess the treatment of POPF in Germany, with a special focus on outpatient drain management in patients with clinically relevant POPF (CR-POPF). A questionnaire evaluating postoperative management once a CR-POPF is diagnosed - especially focusing on ambulatory drain management - was developed and sent to 211 German hospitals performing > 12 pancreatic operations per year. Statistical analysis was carried out using SPSS 21. The final response rate was 62% (n = 131). Outpatient drainage management is performed by most of the responding hospitals (n = 100, 76.3%). However, 30% of hospitals (n = 40) perform outpatient treatment only in 5% of their cases with clinically relevant POPF. There was no correlation between case load of the pancreatic centres and frequency of outpatient drain management. In general, discharge criteria for patients with drained POPF (n = 98, 74.8%), the drain management itself (n = 95, 72.5%) and criteria for drain removal (n = 74, 56.5%) are not standardised but made individually. In centres with standardised drain management criteria for drain removal, these criteria were drain volume < 20 ml (29.8%), no fluid collection (25.2%), no elevation of drain amylase/lipase (25.2%) and no specific symptoms (22.1%). This is the first survey in Germany evaluating outpatient drain management in patients with CR-POPF. Although the data in the literature are rare, the majority of German pancreatic surgeons perform outpatient drain management. However, discharge criteria, outpatient care and drain removal are standardised in only the minority of centres. Therefore, we recommend the evaluation of discharge criteria and a management algorithm for patients with drained CR-POPF to improve the perioperative course. Georg Thieme Verlag KG Stuttgart · New York.

Charge-Dissipative Electrical Cables

NASA Technical Reports Server (NTRS)

Kolasinski, John R.; Wollack, Edward J.

2004-01-01

Electrical cables that dissipate spurious static electric charges, in addition to performing their main functions of conducting signals, have been developed. These cables are intended for use in trapped-ion or ionizing-radiation environments, in which electric charges tend to accumulate within, and on the surfaces of, dielectric layers of cables. If the charging rate exceeds the dissipation rate, charges can accumulate in excessive amounts, giving rise to high-current discharges that can damage electronic circuitry and/or systems connected to it. The basic idea of design and operation of charge-dissipative electrical cables is to drain spurious charges to ground by use of lossy (slightly electrically conductive) dielectric layers, possibly in conjunction with drain wires and/or drain shields (see figure). In typical cases, the drain wires and/or drain shields could be electrically grounded via the connector assemblies at the ends of the cables, in any of the conventional techniques for grounding signal conductors and signal shields. In some cases, signal shields could double as drain shields.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Identification of glacial melt water runoff in a karstic environment and its implication for present and future water availability

NASA Astrophysics Data System (ADS)

Finger, D.; Hugentobler, A.; Huss, M.; Voinesco, A.; Wernli, H.; Fischer, D.; Weber, E.; Jeannin, P.-Y.; Kauzlaric, M.; Wirz, A.; Vennemann, T.; Hüsler, F.; Schädler, B.; Weingartner, R.

2013-03-01

Glaciers all over the world are expected to continue to retreat due to the global warming throughout the 21st century. Consequently, future seasonal water availability might become scarce once glacier areas have declined below a certain threshold affecting future water management strategies. Particular attention should be paid to glaciers located in a karstic environment, as parts of the melt water can be drained by souterrain karst systems. In this study tracer experiments, karst modeling and glacier melt modeling are combined in order to identify flow paths in a high alpine, glacierized, karstic environment (Glacier de la Plaine Morte, Switzerland) and to investigate current and predict future downstream water availability. Flow paths through the karst underground were determined with natural and fluorescent tracers. Subsequently, tracer results and geologic information were assembled in a karst model. Finally, glacier melt projections driven with a climate scenario were performed to discuss future water availability in the area surrounding the glacier. The results suggest that during late summer glacier melt water is rapidly drained through well-developed channels at the glacier bottom to the north of the glacier, while during low flow season melt water enters into the karst and is drained to the south. Climate change projections reveal that by the end of the century glacier melt will be significantly reduced in the summer, jeopardizing water availability in glacier-fed karst springs.

GIDL analysis of the process variation effect in gate-all-around nanowire FET

NASA Astrophysics Data System (ADS)

Kim, Shinkeun; Seo, Youngsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

A novel method for electronic measurement and recording of surgical drain output.

PubMed

van Duren, Bernard Hendrik; van Boxel, Gijsbert Isaac

2017-04-01

Surgical drains are used to collect and measure fluids (e.g. serous fluid, lymph, blood, etc.). The volume of fluid in the container is measured using graded markings on the container and then recorded manually on a "drain chart" allowing for manual rate calculations. This method is dependant on regularly checking the volume of the drain and recording the value accurately; unfortunately, this is often not feasible due to staffing levels and time constraints. This results in inaccurate "drain charts" making clinical decisions based on these figures unreliable. Often the lack of confidence in these measurements leads to delayed drain removal with consequent increased infection risks and potential delayed discharge. Accurate digital measurement of drain content would have a significant impact on clinical care. This paper describes a digital technology to measure volume, making use of a positive terminal at the lowest point of the vessel and negative (sensor) terminals placed at accurate intervals along an axis of the vessel. A proof-of-concept prototype was developed using commercially available electronic components to test the feasibility of a technology for electronic measurement and recording of surgical drain content. In a simulated environment, the proposed technology was shown to be effective and accurate. The proposed electronic drain has a number of advantages over currently used devices in saving time and easing pressure on nursing staff, reduce disturbance of patients, and allows for preset alarms.

Effects of groundwater pumping on agricultural drains in the Tule Lake subbasin, Oregon and California

USGS Publications Warehouse

Pischel, Esther M.; Gannett, Marshall W.

2015-07-24

To better define the effect of increased pumping on drain flow and on the water balance of the groundwater system, the annual water volume pumped from drains in three subareas of the Tule Lake subbasin was estimated and a fine-grid, local groundwater model of the Tule Lake subbasin was constructed. Results of the agricultural-drain flow analysis indicate that groundwater discharge to drains has decreased such that flows in 2012 were approximately 32,400 acre-ft less than the 1997–2000 average flow. This decrease was concentrated in the northern and southeastern parts of the subbasin, which corresponds with the areas of greatest groundwater pumping. Model simulation results of the Tule Lake subbasin groundwater model indicate that increased supplemental pumping is the dominant stress to the groundwater system in the subbasin. Simulated supplemental pumping and decreased recharge from irrigation between 2000 and 2010 totaled 323,573 acre-ft, 234,800 acre-ft (73 percent) of which was from supplemental pumping. The response of the groundwater system to this change in stress included about 180,500 acre-ft (56 percent) of decreased groundwater discharge to drains and a 126,000 acre-ft (39 percent) reduction in aquifer storage. The remaining 5 percent came from reduced groundwater flow to other model boundaries, including the Lost River, the Tule Lake sumps, and interbasin flow.

75 FR 61999 - Airworthiness Directives; The Boeing Company Model 767 Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2010-10-07

..., for certain airplanes, reworking the bonding jumper assemblies on the drain tube assemblies of the... inspections of the drain tube assemblies of the slat track housing of the wings to find discrepancies... would also require replacing the drain tube assemblies. For certain airplanes, this proposed AD would...

Structural Modification of Organic Thin-Film Transistors for Photosensor Application

NASA Astrophysics Data System (ADS)

Jeong, Hyeon Seok; Bae, Jin-Hyuk; Lee, Hyeonju; Ndikumana, Joel; Park, Jaehoon

2018-05-01

We investigated the light response characteristics of bottom-gate/top-contact organic TFTs fabricated using pentacene and polystyrene as an organic semiconductor and a polymeric insulator, respectively. The pentacene TFT with overlaps (50 μm) between the source and gate electrodes as well as between the drain and gate electrodes exhibited negligible hysteresis in its transfer characteristics upon reversal of the gate voltage sweep direction. When the TFTs were structurally modified to produce an underlap structure between the source and gate electrodes, clockwise hysteresis and a drain-current decrease were observed, which were further augmented by increasing the gate underlap (from 30 μm to 50 μm and 70 μm). Herein, these results are explained in terms of space charge formation and accumulation capacitance reduction. Importantly, we found that space charges formed under the source electrode contributed to the drain currents via light irradiation through the underlap region. Under constant bias conditions, the TFTs with gate underlap structures thus exhibited on-state drain current changes in response to light signals. In our study, an optimal photosensitivity exceeding 11 was achieved by the TFT with a 30 μm gate underlap. Consequently, we suggest that gate underlap structure modification is a viable means of implementing light responsiveness in organic TFTs.

Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices

NASA Astrophysics Data System (ADS)

Zanoni, Enrico; Meneghesso, Gaudenzio; Menozzi, Roberto

2000-03-01

Hot electron in III-V FETs can be indirectly monitored by measuring the current coming out from the gate when the device is biased at high electric fields. This negative current is due to the collection of holes generated by impact ionization in the gate-to drain region. Electroluminescence represents a powerful tool in order to characterize not only hot electrons but also material properties. By using spatially resolved emission microscopy it is possible to show that the light due to cold electron/hole recombination is emitted between the gate and the source (low electric field region), while the contribution due to hot electrons is emitted between the gate and the drain (high electric field region). Deep-traps created in the device by hot carriers can be analysed by means of drain current deep level transient spectroscopy and by transconductance frequency dispersion. Cathodoluminescence, optical beam induced current, X-ray spectroscopy, electron energy loss spectroscopy in combination with a transmission electron microscopy are powerful tools in order to identify and localize surface modification following hot-electron stress tests.

Enhanced Erosion of Carbon Grains in a Hot Plasma

NASA Astrophysics Data System (ADS)

Bringa, E. M.; Johnson, R. E.; Salonen, E.; Nordlund, K. H.; Jurac, S.

2001-12-01

Grain creation and survival plays an important role in the overall mass balance, ionization state, and chemistry in the interstellar medium (ISM), in the early solar nebula and in the giant planet magnetospheres. Grain erosion by a high temperature plasma or in a shocked gas depends strongly on the values of the sputtering yield, Y. For instance, Draine [1] considered an energy dependence for Y extrapolated from high energy data and calculated a fractional erosion of less than 1% for a grain which encounters a shocked gas moving with a velocity vo < 90 km/s). Since carbon grains rapidly become hydrogenated in a space environment, we present new data based on accurate simulations for the sputtering of hydrogenated carbon surfaces [2]. The yield is larger at low velocities and is found to have a lower threshold for sputter erosion due to chemical sputtering effects. Here we present results of two sets of calculations. First we use the Draine model for erosion of a grain in a shock as in Jurac et al [3], but change the energy dependence of the sputtering yield based on our new simulation data. This leads to a grain destruction rate which is much larger than Draine's estimate. This worsens the problem of grain destruction in the ISM, which is already larger than currently accepted grain formation rates. Second we give the erosion rates vs. plasma temperature for such grains in a stationery plasma. These data can now be used for modeling grain erosion in the early solar system, in the solar wind or in a trapped plasma in a planetary magnetosphere. [1] B.T. Draine, Astrophys. Space Sci. 233, 111 (1995).\

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

NASA Astrophysics Data System (ADS)

Jarndal, Anwar; Ghannouchi, Fadhel M.

2016-09-01

In this paper, an improved modeling approach has been developed and validated for GaN high electron mobility transistors (HEMTs). The proposed analytical model accurately simulates the drain current and its inherent trapping and thermal effects. Genetic-algorithm-based procedure is developed to automatically find the fitting parameters of the model. The developed modeling technique is implemented on a packaged GaN-on-Si HEMT and validated by DC and small-/large-signal RF measurements. The model is also employed for designing and realizing a switch-mode inverse class-F power amplifier. The amplifier simulations showed a very good agreement with RF large-signal measurements.

H-terminated diamond field effect transistor with ferroelectric gate insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karaya, Ryota; Furuichi, Hiroki; Nakajima, Takashi

2016-06-13

An H-terminated diamond field-effect-transistor (FET) with a ferroelectric vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film was deposited on the H-terminated diamond by the spin-coating method and low-temperature annealing was performed to suppress processing damage to the H-terminated diamond surface channel layer. The fabricated FET structure showed the typical properties of depletion-type p-channel FET and showed clear saturation of the drain current with a maximum value of 50 mA/mm. The drain current versus gate voltage curves of the proposed FET showed clockwise hysteresis loops due to the ferroelectricity of the VDF-TrFE gate insulator, and the memory windowmore » width was 19 V, when the gate voltage was swept from 20 to −20 V. The maximum on/off current ratio and the linear mobility were 10{sup 8} and 398 cm{sup 2}/V s, respectively. In addition, we modulated the drain current of the fabricated FET structure via the remnant polarization of the VDF-TrFE gate and obtained an on/off current ratio of 10{sup 3} without applying a DC gate voltage.« less

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Kang, B. S.; Mehandru, R.; Kim, S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2004-06-01

Pt contacted AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectrics show reversible changes in drain-source current upon exposure to H2-containing ambients, even at room temperature. The changes in current (as high as 3 mA for relatively low gate voltage and drain-source voltage) are approximately an order of magnitude larger than for Pt/GaN Schottky diodes and a factor of 5 larger than Sc2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) diodes exposed under the same conditions. This shows the advantage of using a transistor structure in which the gain produces larger current changes upon exposure to hydrogen-containing ambients. The increase in current is the result of a decrease in effective barrier height of the MOS gate of 30-50 mV at 25 °C for 10% H2/90% N2 ambients relative to pure N2 and is due to catalytic dissociation of the H2 on the Pt contact, followed by diffusion to the Sc2O3/AlGaN interface.

Analytical model of nanoscale junctionless transistors towards controlling of short channel effects through source/drain underlap and channel thickness engineering

NASA Astrophysics Data System (ADS)

Roy, Debapriya; Biswas, Abhijit

2018-01-01

We develop a 2D analytical subthreshold model for nanoscale double-gate junctionless transistors (DGJLTs) with gate-source/drain underlap. The model is validated using well-calibrated TCAD simulation deck obtained by comparing experimental data in the literature. To analyze and control short-channel effects, we calculate the threshold voltage, drain induced barrier lowering (DIBL) and subthreshold swing of DGJLTs using our model and compare them with corresponding simulation value at channel length of 20 nm with channel thickness tSi ranging 5-10 nm, gate-source/drain underlap (LSD) values 0-7 nm and source/drain doping concentrations (NSD) ranging 5-12 × 1018 cm-3. As tSi reduces from 10 to 5 nm DIBL drops down from 42.5 to 0.42 mV/V at NSD = 1019 cm-3 and LSD = 5 nm in contrast to decrement from 71 to 4.57 mV/V without underlap. For a lower tSiDIBL increases marginally with increasing NSD. The subthreshold swing reduces more rapidly with thinning of channel thickness rather than increasing LSD or decreasing NSD.

Automated detection of external ventricular and lumbar drain-related meningitis using laboratory and microbiology results and medication data.

PubMed

van Mourik, Maaike S M; Groenwold, Rolf H H; Berkelbach van der Sprenkel, Jan Willem; van Solinge, Wouter W; Troelstra, Annet; Bonten, Marc J M

2011-01-01

Monitoring of healthcare-associated infection rates is important for infection control and hospital benchmarking. However, manual surveillance is time-consuming and susceptible to error. The aim was, therefore, to develop a prediction model to retrospectively detect drain-related meningitis (DRM), a frequently occurring nosocomial infection, using routinely collected data from a clinical data warehouse. As part of the hospital infection control program, all patients receiving an external ventricular (EVD) or lumbar drain (ELD) (2004 to 2009; n = 742) had been evaluated for the development of DRM through chart review and standardized diagnostic criteria by infection control staff; this was the reference standard. Children, patients dying <24 hours after drain insertion or with <1 day follow-up and patients with infection at the time of insertion or multiple simultaneous drains were excluded. Logistic regression was used to develop a model predicting the occurrence of DRM. Missing data were imputed using multiple imputation. Bootstrapping was applied to increase generalizability. 537 patients remained after application of exclusion criteria, of which 82 developed DRM (13.5/1000 days at risk). The automated model to detect DRM included the number of drains placed, drain type, blood leukocyte count, C-reactive protein, cerebrospinal fluid leukocyte count and culture result, number of antibiotics started during admission, and empiric antibiotic therapy. Discriminatory power of this model was excellent (area under the ROC curve 0.97). The model achieved 98.8% sensitivity (95% CI 88.0% to 99.9%) and specificity of 87.9% (84.6% to 90.8%). Positive and negative predictive values were 56.9% (50.8% to 67.9%) and 99.9% (98.6% to 99.9%), respectively. Predicted yearly infection rates concurred with observed infection rates. A prediction model based on multi-source data stored in a clinical data warehouse could accurately quantify rates of DRM. Automated detection using this statistical approach is feasible and could be applied to other nosocomial infections.

Development and testing of watershed-scale models for poorly drained soils

Treesearch

Glenn P. Fernandez; George M. Chescheir; R. Wayne Skaggs; Devendra M. Amatya

2005-01-01

Watershed-scale hydrology and water quality models were used to evaluate the crrmulative impacts of land use and management practices on dowrzstream hydrology and nitrogen loading of poorly drained watersheds. Field-scale hydrology and nutrient dyyrutmics are predicted by DRAINMOD in both models. In the first model (DRAINMOD-DUFLOW), field-scale predictions are coupled...

Restructuring brain drain: strengthening governance and financing for health worker migration

PubMed Central

Mackey, Tim K.; Liang, Bryan A.

2013-01-01

Background Health worker migration from resource-poor countries to developed countries, also known as ‘‘brain drain’’, represents a serious global health crisis and a significant barrier to achieving global health equity. Resource-poor countries are unable to recruit and retain health workers for domestic health systems, resulting in inadequate health infrastructure and millions of dollars in healthcare investment losses. Methods Using acceptable methods of policy analysis, we first assess current strategies aimed at alleviating brain drain and then propose our own global health policy based solution to address current policy limitations. Results Although governments and private organizations have tried to address this policy challenge, brain drain continues to destabilise public health systems and their populations globally. Most importantly, lack of adequate financing and binding governance solutions continue to fail to prevent health worker brain drain. Conclusions In response to these challenges, the establishment of a Global Health Resource Fund in conjunction with an international framework for health worker migration could create global governance for stable funding mechanisms encourage equitable migration pathways, and provide data collection that is desperately needed. PMID:23336617

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

NASA Astrophysics Data System (ADS)

Zhou, Hong; Maize, Kerry; Qiu, Gang; Shakouri, Ali; Ye, Peide D.

2017-08-01

We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

Homogenization of one-dimensional draining through heterogeneous porous media including higher-order approximations

NASA Astrophysics Data System (ADS)

Anderson, Daniel M.; McLaughlin, Richard M.; Miller, Cass T.

2018-02-01

We examine a mathematical model of one-dimensional draining of a fluid through a periodically-layered porous medium. A porous medium, initially saturated with a fluid of a high density is assumed to drain out the bottom of the porous medium with a second lighter fluid replacing the draining fluid. We assume that the draining layer is sufficiently dense that the dynamics of the lighter fluid can be neglected with respect to the dynamics of the heavier draining fluid and that the height of the draining fluid, represented as a free boundary in the model, evolves in time. In this context, we neglect interfacial tension effects at the boundary between the two fluids. We show that this problem admits an exact solution. Our primary objective is to develop a homogenization theory in which we find not only leading-order, or effective, trends but also capture higher-order corrections to these effective draining rates. The approximate solution obtained by this homogenization theory is compared to the exact solution for two cases: (1) the permeability of the porous medium varies smoothly but rapidly and (2) the permeability varies as a piecewise constant function representing discrete layers of alternating high/low permeability. In both cases we are able to show that the corrections in the homogenization theory accurately predict the position of the free boundary moving through the porous medium.

Evaluation of SCS-CN method using a fully distributed physically based coupled surface-subsurface flow model

NASA Astrophysics Data System (ADS)

Shokri, Ali

2017-04-01

The hydrological cycle contains a wide range of linked surface and subsurface flow processes. In spite of natural connections between surface water and groundwater, historically, these processes have been studied separately. The current trend in hydrological distributed physically based model development is to combine distributed surface water models with distributed subsurface flow models. This combination results in a better estimation of the temporal and spatial variability of the interaction between surface and subsurface flow. On the other hand, simple lumped models such as the Soil Conservation Service Curve Number (SCS-CN) are still quite common because of their simplicity. In spite of the popularity of the SCS-CN method, there have always been concerns about the ambiguity of the SCS-CN method in explaining physical mechanism of rainfall-runoff processes. The aim of this study is to minimize these ambiguity by establishing a method to find an equivalence of the SCS-CN solution to the DrainFlow model, which is a fully distributed physically based coupled surface-subsurface flow model. In this paper, two hypothetical v-catchment tests are designed and the direct runoff from a storm event are calculated by both SCS-CN and DrainFlow models. To find a comparable solution to runoff prediction through the SCS-CN and DrainFlow, the variance between runoff predictions by the two models are minimized by changing Curve Number (CN) and initial abstraction (Ia) values. Results of this study have led to a set of lumped model parameters (CN and Ia) for each catchment that is comparable to a set of physically based parameters including hydraulic conductivity, Manning roughness coefficient, ground surface slope, and specific storage. Considering the lack of physical interpretation in CN and Ia is often argued as a weakness of SCS-CN method, the novel method in this paper gives a physical explanation to CN and Ia.

Continuous 'Passive' Registration of Non-Point Contaminant Loads Via Agricultural Subsurface Drain Tubes

NASA Astrophysics Data System (ADS)

Rozemeijer, J.; Jansen, S.; de Jonge, H.; Lindblad Vendelboe, A.

2014-12-01

Considering their crucial role in water and solute transport, enhanced monitoring and modeling of agricultural subsurface tube drain systems is important for adequate water quality management. For example, previous work in lowland agricultural catchments has shown that subsurface tube drain effluent contributed up to 80% of the annual discharge and 90-92% of the annual NO3 loads from agricultural fields towards the surface water. However, existing monitoring techniques for flow and contaminant loads from tube drains are expensive and labor-intensive. Therefore, despite the unambiguous relevance of this transport route, tube drain monitoring data are scarce. The presented study aimed developing a cheap, simple, and robust method to monitor loads from tube drains. We are now ready to introduce the Flowcap that can be attached to the outlet of tube drains and is capable of registering total flow, contaminant loads, and flow-averaged concentrations. The Flowcap builds on the existing SorbiCells, a modern passive sampling technique that measures average concentrations over longer periods of time (days to months) for various substances. By mounting SorbiCells in our Flowcap, a flow-proportional part of the drain effluent is sampled from the main stream. Laboratory testing yielded good linear relations (R-squared of 0.98) between drainage flow rates and sampling rates. The Flowcap was tested in practice for measuring NO3 loads from two agricultural fields and one glasshouse in the Netherlands. The Flowcap registers contaminant loads from tube drains without any need for housing, electricity, or maintenance. This enables large-scale monitoring of non-point contaminant loads via tube drains, which would facilitate the improvement of contaminant transport models and would yield valuable information for the selection and evaluation of mitigation options to improve water quality.

Toward Adequate Operation of Amorphous Oxide Thin-Film Transistors for Low-Concentration Gas Detection.

PubMed

Kim, Kyung Su; Ahn, Cheol Hyoun; Jung, Sung Hyeon; Cho, Sung Woon; Cho, Hyung Koun

2018-03-28

We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO 2 gas detection. Although amorphous oxide layers have a restricted surface area when reacting with NO 2 gas, such TFT sensors have incomparable advantages in the aspects of electrical stability, large-scale uniformity, and the possibility of miniaturization. The a-IGZO thin films do not possess typical reactive sites and grain boundaries, so that the variation in drain current of the TFTs strictly originates from oxidation reaction between channel surface and NO 2 gas. Especially, the sensing data obtained from the variation rate of drain current makes it possible to monitor efficiently and quickly the variation of the NO 2 concentration. Interestingly, we found that enhancement-mode TFT (EM-TFT) allows discrimination of the drain current variation rate at NO 2 concentrations ≤10 ppm, whereas a depletion-mode TFT is adequate for discriminating NO 2 concentrations ≥10 ppm. This discrepancy is attributed to the ratio of charge carriers contributing to gas capture with respect to total carriers. This capacity for the excellent detection of low-concentration NO 2 gas can be realized through (i) three-terminal TFT gas sensors using amorphous oxide, (ii) measurement of the drain current variation rate for high selectivity, and (iii) an EM mode driven by tuning the electrical conductivity of channel layers.

Preliminary chaotic model of snapover on high voltage solar cells

NASA Technical Reports Server (NTRS)

Mackey, Willie R.

1995-01-01

High voltage power systems in space will interact with the space plasma in a variety of ways. One of these, snapover, is characterized by sudden enlargement of the current collection area across normally insulating surfaces generating enhanced electron current collection. Power drain on solar array power systems results from this enhanced current collection. Optical observations of the snapover phenomena in the laboratory indicates a functional relation between glow area and bia potential as a consequence of the fold/cusp bifurcation in chaos theory. Successful characterizations of snapover as a chaotic phenomena may provide a means of snapover prevention and control through chaotic synchronization.

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

NASA Astrophysics Data System (ADS)

Lachab, M.; Sultana, M.; Fatima, H.; Adivarahan, V.; Fareed, Q.; Khan, M. A.

2012-12-01

This work reports on the dc performance of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) grown on Si (1 1 1) substrate and the study of current dispersion in these devices using various widely adopted methods. The MOSHEMTs were fabricated using a very thin (4.2 nm) SiO2 film as the gate insulator and were subsequently passivated with about 30 nm thick Si3N4 layer. For devices with 2.5 µm long gates and a 4 µm drain-to-source spacing, the maximum saturation drain current density was 822 mA mm-1 at + 4 V gate bias and the peak external transconductance was ˜100 mS mm-1. Furthermore, the oxide layer successfully suppressed the drain and gate leakage currents with the subthreshold current and the gate diode current levels exceeding by more than three orders of magnitude the levels found in their Schottky gate counterparts. Capacitance-voltage and dynamic current-voltage measurements were carried out to assess the oxide quality as well as the devices’ surface properties after passivation. The efficacy of each of these characterization techniques to probe the presence of interface traps and oxide charge in the nitride-based transistors is also discussed.

Improving Current Balance In Parallel MOSFET's

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1992-01-01

Simple circuit makes currents more nearly equal. Addition of diodes and adjustable-tap resistor increases operating range over which drain currents in two unmatched power MOSFET's brought more nearly into balance.

Using MODFLOW drains to simulate groundwater flow in a karst environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quinn, J.; Tomasko, D.; Glennon, M.A.

1998-07-01

Modeling groundwater flow in a karst environment is both numerically challenging and highly uncertain because of potentially complex flowpaths and a lack of site-specific information. This study presents the results of MODFLOW numerical modeling in which drain cells in a finite-difference model are used as analogs for preferential flowpaths or conduits in karst environments. In this study, conduits in mixed-flow systems are simulated by assigning connected pathways of drain cells from the locations of tracer releases, sinkholes, or other karst features to outlet springs along inferred flowpaths. These paths are determined by the locations of losing stream segments, ephemeral streammore » beds, geophysical surveys, fracture lineaments, or other surficial characteristics, combined with the results of dye traces. The elevations of the drains at the discharge ends of the inferred flowpaths are estimated from field data and are adjusted when necessary during model calibration. To simulate flow in a free-flowing conduit, a high conductance is assigned to each drain to eliminate the need for drain-specific information that would be very difficult to obtain. Calculations were performed for a site near Hohenfels, Germany. The potentiometric surface produced by the simulations agreed well with field data. The head contours in the vicinity of the karst features behaved in a manner consistent with a flow system having both diffuse and conduit components, and the sum of the volumetric flow out of the drain cells agreed closely with spring discharges and stream flows. Because of the success of this approach, it is recommended for regional studies in which little site-specific information (e.g., location, number, size, and conductivity of fractures and conduits) is available, and general flow characteristics are desired.« less

A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance

NASA Astrophysics Data System (ADS)

Dash, S.; Mishra, G. P.

2015-09-01

A 2D analytical tunnel field-effect transistor (FET) potential model with cylindrical gate (CG-TFET) based on the solution of Laplace’s equation is proposed. The band-to-band tunneling (BTBT) current is derived by the help of lateral electric field and the shortest tunneling distance. However, the analysis is extended to obtain the subthreshold swing (SS) and transfer characteristics of the device. The dependency of drain current, SS and transconductance on gate voltage and shortest tunneling distance is discussed. Also, the effect of scaling the gate oxide thickness and the cylindrical body diameter on the electrical parameters of the device is analyzed.

Modeling of Current Consumption in 802.15.4/ZigBee Sensor Motes

PubMed Central

Casilari, Eduardo; Cano-García, Jose M.; Campos-Garrido, Gonzalo

2010-01-01

Battery consumption is a key aspect in the performance of wireless sensor networks. One of the most promising technologies for this type of networks is 802.15.4/ZigBee. This paper presents an empirical characterization of battery consumption in commercial 802.15.4/ZigBee motes. This characterization is based on the measurement of the current that is drained from the power source under different 802.15.4 communication operations. The measurements permit the definition of an analytical model to predict the maximum, minimum and mean expected battery lifetime of a sensor networking application as a function of the sensor duty cycle and the size of the sensed data. PMID:22219671

Modeling of current consumption in 802.15.4/ZigBee sensor motes.

PubMed

Casilari, Eduardo; Cano-García, Jose M; Campos-Garrido, Gonzalo

2010-01-01

Battery consumption is a key aspect in the performance of wireless sensor networks. One of the most promising technologies for this type of networks is 802.15.4/ZigBee. This paper presents an empirical characterization of battery consumption in commercial 802.15.4/ZigBee motes. This characterization is based on the measurement of the current that is drained from the power source under different 802.15.4 communication operations. The measurements permit the definition of an analytical model to predict the maximum, minimum and mean expected battery lifetime of a sensor networking application as a function of the sensor duty cycle and the size of the sensed data.

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

NASA Astrophysics Data System (ADS)

Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

2016-08-01

The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p+-p-p+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2-4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 105. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

Prediction of phosphorus loads in an artificially drained lowland catchment using a modified SWAT model

NASA Astrophysics Data System (ADS)

Bauwe, Andreas; Eckhardt, Kai-Uwe; Lennartz, Bernd

2017-04-01

Eutrophication is still one of the main environmental problems in the Baltic Sea. Currently, agricultural diffuse sources constitute the major portion of phosphorus (P) fluxes to the Baltic Sea and have to be reduced to achieve the HELCOM targets and improve the ecological status. Eco-hydrological models are suitable tools to identify sources of nutrients and possible measures aiming at reducing nutrient loads into surface waters. In this study, the Soil and Water Assessment Tool (SWAT) was applied to the Warnow river basin (3300 km2), the second largest watershed in Germany discharging into the Baltic Sea. The Warnow river basin is located in northeastern Germany and characterized by lowlands with a high proportion of artificially drained areas. The aim of this study were (i) to estimate P loadings for individual flow fractions (point sources, surface runoff, tile flow, groundwater flow), spatially distributed on sub-basin scale. Since the official version of SWAT does not allow for the modeling of P in tile drains, we tested (ii) two different approaches of simulating P in tile drains by changing the SWAT source code. The SWAT source code was modified so that (i) the soluble P concentration of the groundwater was transferred to the tile water and (ii) the soluble P in the soil was transferred to the tiles. The SWAT model was first calibrated (2002-2011) and validated (1992-2001) for stream flow at 7 headwater catchments at a daily time scale. Based on this, the stream flow at the outlet of the Warnow river basin was simulated. Performance statistics indicated at least satisfactory model results for each sub-basin. Breaking down the discharge into flow constituents, it becomes visible that stream flow is mainly governed by groundwater and tile flow. Due to the topographic situation with gentle slopes, surface runoff played only a minor role. Results further indicate that the prediction of soluble P loads was improved by the modified SWAT versions. Major sources of P in rivers are groundwater and tile flow. P was also released by surface runoff during large storm events when sediment was eroded into the rivers. The contributions of point sources in terms of waste water treatment plants to the overall P loading were low. The modifications made in the SWAT source code should be considered as a starting point to simulate P loads in artificially drained landscapes more precisely. Further testing and development of the code is required.

Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets

NASA Astrophysics Data System (ADS)

Mativenga, Mallory; Kang, Dong Han; Lee, Ung Gi; Jang, Jin

2012-09-01

Bias instability of top-gate amorphous-indium-gallium-zinc-oxide thin-film transistors with source- and drain-offsets is reported. Positive and negative gate bias-stress (VG_STRESS) respectively induce reversible negative threshold-voltage shift (ΔVTH) and reduction in on-current. Migration of positive charges towards the offsets lowers the local resistance of the offsets, resulting in the abnormal negative ΔVTH under positive VG_STRESS. The reduction in on-current under negative VG_STRESS is due to increase in resistance of the offsets when positive charges migrate away from the offsets. Appropriate drain and source bias-stresses applied simultaneously with VG_STRESS either suppress or enhance the instability, verifying lateral ion migration to be the instability mechanism.

Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

NASA Astrophysics Data System (ADS)

Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei

2017-04-01

A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

Suction forces generated by passive bile bag drainage on a model of post-subdural hematoma evacuation.

PubMed

Tenny, Steven O; Thorell, William E

2018-05-05

Passive drainage systems are commonly used after subdural hematoma evacuation but there is a dearth of published data regarding the suction forces created. We set out to quantify the suction forces generated by a passive drainage system. We created a model of passive drainage after subdural hematoma evacuation. We measured the maximum suction force generated with a bile bag drain for both empty drain tubing and fluid-filled drain tube causing a siphoning effect. We took measurements at varying heights of the bile bag to analyze if bile bag height changed suction forces generated. An empty bile bag with no fluid in the drainage tube connected to a rigid, fluid-filled model creates minimal suction force of 0.9 mmHg (95% CI 0.64-1.16 mmHg). When fluid fills the drain tubing, a siphoning effect is created and can generate suction forces ranging from 18.7 to 30.6 mmHg depending on the relative position of the bile bag and filled amount of the bile bag. The suction forces generated are statistically different if the bile bag is 50 cm below, level with or 50 cm above the experimental model. Passive bile bag drainage does not generate significant suction on a fluid-filled rigid model if the drain tubing is empty. If fluid fills the drain tubing then siphoning occurs and can increase the suction force of a passive bile bag drainage system to levels comparable to partially filled Jackson-Pratt bulb drainage.

Fabrication and Analysis of a Selectively Contacted Dual Channel High Electron Mobility Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Khanna, Ravi

1992-01-01

A selectively contacted dual-channel high electron mobility transistor (SCD-CHEMT) has been designed, fabricated, and electrically characterized, in order to better understand the properties of two layers of two-dimensional electron gases (2DEGs) confined within a quantum well. The 2DEGs are placed under a Schottky barrier control gate which modulates their sheet charge densities, and by use of auxiliary Schottky barrier gates and two levels of ohmic contacts, electrical contacts to the individual channels in which each 2DEG resides is achieved. The design of the dual channel FET structure, and its practical realization by recourse to process development and fabrication are described, as are the techniques, results, and interpretations of electrical characterizations used to analyze the completed device. Critical fabrication procedures involving photolithography, etching, deposition, shallow and deep ohmic contact formation, and gate formation are developed, and a simple technique to reduce gate leakage by photo-oxidation is demonstrated. Analysis of the completed device is performed using one-dimensional band diagram simulations, magnetotransport and electrical measurements. Magnetotransport studies establish the existence of two 2DEGs within the quantum well at 4K. Drain current vs. drain voltage, and transconductance vs. gate voltage characteristics at room temperature confirm the presence of two 2DEGs and show that current flow between them occurs easily at room temperature. Carrier electron mobility profiles are taken of the 2DEGs and show that the lower 2DEG has a mobility comparable to that of a 2DEG formed at a normal interface, indicating that the "inverted interface problem" has been overcome. Capacitance vs. gate voltage measurements are taken, which are consistent with a simple device model consisting of gate depletion and interelectrode parasitic capacitances. It is concluded from the analysis that the dual channel system resides in three basic states: (1) Both channels are occupied by 2DEGs or (2) The upper channel is depleted, or (3) Both channels depleted. Finally, increase in isolation between the two 2DEGs is dramatically demonstrated at 77K by the drain current vs. drain voltage, and transconductance vs. gate voltage characteristics.

Effectiveness of submerged drains in reducing subsidence of peat soils in agricultural use, and their effects on water management and nutrient loading of surface water: modelling of a case study in the western peat soil area of The Netherlands

NASA Astrophysics Data System (ADS)

Hendriks, Rob F. A.; van den Akker, Jan J. A.

2017-04-01

Effectiveness of submerged drains in reducing subsidence of peat soils in agricultural use, and their effects on water management and nutrient loading of surface water: modelling of a case study in the western peat soil area of The Netherlands In the Netherlands, about 8% of the area is covered by peat soils. Most of these soils are in use for dairy farming and, consequently, are drained. Drainage causes decomposition of peat by oxidation and accordingly leads to surface subsidence and greenhouse gas emission. Submerged drains that enhance submerged infiltration of water from ditches during the dry and warm summer half year were, and are still, studied in The Netherlands as a promising tool for reducing peat decomposition by raising groundwater levels. For this purpose, several pilot field studies in the Western part of the Dutch peat area were conducted. Besides the effectiveness of submerged drains in reducing peat decomposition and subsidence by raising groundwater tables, some other relevant or expected effects of these drains were studied. Most important of these are water management and loading of surface water with nutrients nitrogen, phosphorus and sulphate. Because most of these parameters are not easy to assess and all of them are strongly depending on the meteorological conditions during the field studies some of these studies were modelled. The SWAP model was used for evaluating the hydrological results on groundwater table and water discharge and recharge. Effects of submerged drains were assessed by comparing the results of fields with and without drains. An empirical relation between deepest groundwater table and subsidence was used to convert effects on groundwater table to effects on subsidence. With the SWAP-ANIMO model nutrient loading of surface water was modelled on the basis of field results on nutrient concentrations . Calibrated models were used to assess effects in the present situation, as thirty-year averages, under extreme weather conditions and for two extreme climate scenarios of the Royal Netherlands Meteorological Institute. In this study the model results of one of the pilot studies are presented. The case study 'de Krimpenerwaard' is situated in the peat area in the "Green Heart" between the major cities of Amsterdam, The Hague, Rotterdam and Utrecht. Model results show a halving of soil subsidence, a strong increase of water recharge but a lower increase of water discharge, and generally small to moderate effects on nutrient loading , all depending (strongly) on meteorological conditions.

Linking selenium sources to ecosystems: San Francisco Bay-Delta Model

USGS Publications Warehouse

Presser, Theresa S.; Luoma, Samuel N.

2004-01-01

Marine sedimentary rocks of the Coast Ranges contribute selenium to soil, surface water, and ground water in the western San Joaquin Valley, California. Irrigation funnels selenium into a network of subsurface drains and canals. Proposals to build a master drain (i.e., San Luis Drain) to discharge into the San Francisco Bay-Delta Estuary remain as controversial today as they were in the 1950s, when drainage outside the San Joaquin Valley was first considered. An existing 85-mile portion of the San Luis Drain was closed in 1986 after fish mortality and deformities in ducks, grebes and coots were discovered at Kesterson National Wildlife Refuge, the temporary terminus of the drain. A 28-mile portion of the drain now conveys drainage from 100,000 acres into the San Joaquin River and eventually into the Bay-Delta. If the San Luis Drain is extended directly to the Bay-Delta, as is now being proposed as an alternative to sustain agriculture, it could receive drainage from an estimated one-million acres of farmland affected by rising water tables and increasing salinity. In addition to agricultural sources, oil refineries also discharge selenium to the Bay-Delta, although those discharges have declined in recent years. To understand the effects of changing selenium inputs, scientists have developed the Bay-Delta Selenium Model.

DRAINMOD-FOREST: Integrated modeling of hydrology, soil carbon and nitrogen dynamics, and plant growth for drained forests

Treesearch

Shiying Tian; Mohamed A. Youssef; R. Wayne Skaggs; Devendra M. Amatya; G.M. Chescheir

2012-01-01

We present a hybrid and stand-level forest ecosystem model, DRAINMOD-FOREST, for simulating the hydrology, carbon (C) and nitrogen (N) dynamics, and tree growth for drained forest lands under common silvicultural practices. The model was developed by linking DRAINMOD, the hydrological model, and DRAINMOD-N II, the soil C and N dynamics model, to a forest growth model,...

Modeling and risk assessment of a 30-Year-old subsurface radioactive-liquid drain field

NASA Astrophysics Data System (ADS)

Dawson, Lon A.; Pohl, Phillip I.

1997-11-01

The contamination from a 30-year-old radioactive liquid drain field was assessed for movement in the subsurface and potential risks to humans. This assessment included determining field concentrations of cesium 137 (137Cs) and other inorganic contaminants and modeling of the flow and transport of the liquid waste that was sent to the drain field. The field investigation detected no contamination deeper than 15 feet (4.6 m) from the bottom of the drain field. Prediction of the water content of the vadose zone showed no saturated conditions for times greater than 10 years after the known infiltration. Sensitivity analysis of the modeling parameters showed the equilibrium sorption coefficient to be the most important factor in predicting the contaminant plumes. Calibration of modeling results with field data gave a 137Cs sorption coefficient that is within the range of values found in the literature. The risk assessment for the site showed that the contamination poses no significant risk to human health.

Controlling attachment and growth of Listeria monocytogenes in PVC model floor drains using a peroxide chemical, chitosan/arginine or heat

USDA-ARS?s Scientific Manuscript database

Listeria monocytogenes enters a poultry further processing plant with raw product and colonizes the plant as a resident in floor drains. We have shown that L. monocytogenes can escape floor drains, becoming airborne during wash down, creating potential for contamination of fully cooked product. Li...

Controlling attachment and growth of listeria monocytogenes in polyvinyl chloride model floor drains using a peroxide chemical, chitosan-arginine, or heat

USDA-ARS?s Scientific Manuscript database

Listeria monocytogenes can colonize a poultry processing or further processing plant as a resident in floor drains. Limiting growth and attachment to drain surfaces may help lessen the potential for cross contamination of product. The objective of this study was to compare a synthetic hydrogen per...

Development of Thermal Bridging Factors for Use in Energy Models

DTIC Science & Technology

2015-06-20

assemblies. 5.2.2 Drainage : Drained systems Drained (Figure 5-6) and screened enclosures assume some rainwater will penetrate the outer surface...38 5.2.2 Drainage : Drained systems ...layer (e.g., drainage plane and gap or waterproofing) 2. Airflow control layer (e.g., an air barrier system ) 3. Thermal control layer (e.g., insulation

Assessment of geomorphological and hydrological changes produced by Pleistocene glaciations in a Patagonian basin

NASA Astrophysics Data System (ADS)

Scordo, Facundo; Seitz, Carina; Melo, Walter D.; Piccolo, M. Cintia; Perillo, Gerardo M. E.

2018-04-01

This work aims to assess how Pleistocene glaciations modeled the landscape in the upper Senguer River basin and its relationship to current watershed features (drainage surface and fluvial hydrological regime). During the Pleistocene six glacial lobes developed in the upper basin of the Senguer River localized east of the Andean range in southern Argentinean Patagonia between 43° 36' - 46° 27‧ S. To describe the topography and hydrology, map the geomorphology, and propose an evolution of the study area during the Pleistocene we employed multitemporal Landsat images, national geological sheets and a mosaic of the digital elevation model (Shuttle Radar Topography Mission) along with fieldwork. The main conclusion is that until the Middle Pleistocene, the drainage divide of the Senguer River basin was located to the west of its current limits and its rivers drained the meltwater of the glaciers during interglacial periods. However, processes of drainage inversion and drainage surface reduction occurred in the headwater of most rivers of the basin during the Late Pleistocene. Those processes were favored by a relative shorter glacial extension during LGM and the dam effect produced by the moraines of the Post GPG I and III glaciations. Thus, since the Late Pleistocene, the headwaters of several rivers in the basin have been reduced, and the moraines corresponding to the Middle Pleistocene glaciations currently divide the watersheds that drain towards the Senguer River from those that flow west towards the Pacific Ocean.

Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Woo-Sic; Cho, Yong-Jung; Lee, Yeol-Hyeong; Park, JeongKi; Kim, GeonTae; Kim, Ohyun

2017-11-01

We investigated the degradation mechanism of a-InGaZnO TFTs under simultaneous gate and drain bias stress. Gate and drain bias of 20 V were applied simultaneously to induce current stress, and abnormal turn-around behavior in transfer characteristics with a hump phenomenon were identified. Hump characteristics were interpreted in terms of parasitic current path, and the degradation itself was found to be caused dominantly by the electrical field and to be accelerated with current by Joule heating. The mechanism of asymmetrical degradation after current stress was also investigated. By decomposing the curves into two curves and measuring the relaxation behavior of the stressed TFTs, we also found that abnormal turn-around behavior in the transfer characteristics was related to acceptor-like states.

Field evaluations of a forestry version of DRAINMOD-NII model

Treesearch

S. Tian; M. A. Youssef; R.W. Skaggs; D.M. Amatya; G.M. Chescheir

2010-01-01

This study evaluated the performance of the newly developed forestry version of DRAINMOD-NII model using a long term (21-year) data set collected from an artificially drained loblolly pine (Pinus taeda L.) plantation in eastern North Carolina, U.S.A. The model simulates the main hydrological and biogeochemical processes in drained forested lands. The...

Phosphorus modeling in tile drained agricultural systems using APEX

USDA-ARS?s Scientific Manuscript database

Phosphorus losses through tile drained systems in agricultural landscapes may be causing the persistent eutrophication problems observed in surface water. The purpose of this paper is to evaluate the state of the science in the Agricultural Policy/Environmental eXtender (APEX) model related to surf...

Analytical results from an environmental investigation of six sites on Kirtland Air Force Base, New Mexico, 1993-94

USGS Publications Warehouse

Wilcox, Ralph

1995-01-01

The six sites investigated include silver recovery units; a buried caustic drain line; a neutralization pit; an evaporation/infiltration pond; the Manzano fire training area; and a waste oil underground storage tank. Environmental samples of soil, pond sediment, soil gas, and water and gas in floor drains were collected and analyzed. Field quality-control samples were also collected and analyzed in association with the environmental samples. The six sites were investigated because past or current activities could have resulted in contamination of soil, pond sediment, or water and sediment in drains.

Partially to fully saturated flow through smooth, clean, open fractures: qualitative experimental studies

NASA Astrophysics Data System (ADS)

Jones, Brendon R.; Brouwers, Luke B.; Dippenaar, Matthys A.

2018-05-01

Fractures are both rough and irregular but can be expressed by a simple model concept of two smooth parallel plates and the associated cubic law governing discharge through saturated fractures. However, in natural conditions and in the intermediate vadose zone, these assumptions are likely violated. This paper presents a qualitative experimental study investigating the cubic law under variable saturation in initially dry free-draining discrete fractures. The study comprised flow visualisation experiments conducted on transparent replicas of smooth parallel plates with inlet conditions of constant pressure and differing flow rates over both vertical and horizontal inclination. Flow conditions were altered to investigate the influence of intermittent and continuous influx scenarios. Findings from this research proved, for instance, that saturated laminar flow is not likely achieved, especially in nonhorizontal fractures. In vertical fractures, preferential flow occupies the minority of cross-sectional area despite the water supply. Movement of water through the fractured vadose zone therefore becomes a matter of the continuity principle, whereby water should theoretically be transported downward at significantly higher flow rates given the very low degree of water saturation. Current techniques that aim to quantify discrete fracture flow, notably at partial saturation, are questionable. Inspired by the results of this study, it is therefore hypothetically improbable to achieve saturation in vertical fractures under free-draining wetting conditions. It does become possible under extremely excessive water inflows or when not free-draining; however, the converse is not true, as a wet vertical fracture can be drained.

Charge-exchange plasma environment for an ion drive spacecraft. [a model for describing mercury ion engines and its effect on spacecraft subsystems

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Carruth, M. R., Jr.

1979-01-01

The charge exchange plasma environment around a spacecraft that uses mercury ion thrusters for propulsion is described. The interactions between the plasma environment and the spacecraft are determined and a model which describes the propagation of the mercury charge exchange plasma is discussed. The model is extended to describe the flow of the molybdenum component of the charge exchange plasma. The uncertainties in the models for various conditions are discussed and current drain to the solar array, charge exchange plasma material deposition, and the effects of space plasma on the charge exchange plasma propagation are addressed.

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

NASA Astrophysics Data System (ADS)

Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

2017-09-01

A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

A pH sensor based on electric properties of nanotubes on a glass substrate

PubMed Central

Nakamura, Motonori; Ishii, Atsushi; Subagyo, Agus; Hosoi, Hirotaka; Sueoka, Kazuhisa; Mukasa, Koichi

2007-01-01

We fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling agent on the nanotube. The device showed properties of ann-type field effect transistor when a potential was applied to the nanotube from the top gate electrode. Before fabrication of the insulating layer, the device showed that thep-type field effect transistor and the current through the source and drain electrodes depend on the buffer pH. The current increases with decreasing pH of the CNT solution. This device, which can detect pH, is applicable for use as a biosensor through modification of the CNT surface. PMID:21806848

Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET

NASA Astrophysics Data System (ADS)

Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng

2014-01-01

In this work, three dimensional technology computer-aided design (TCAD) simulations are performed to investigate the impact of random discrete dopant (RDD) including extension induced fluctuation in 14 nm silicon-on-insulator (SOI) gate-source/drain (G-S/D) underlap fin field effect transistor (FinFET). To fully understand the RDD impact in extension, RDD effect is evaluated in channel and extension separately and together. The statistical variability of FinFET performance parameters including threshold voltage (Vth), subthreshold slope (SS), drain induced barrier lowering (DIBL), drive current (Ion), and leakage current (Ioff) are analyzed. The results indicate that RDD in extension can lead to substantial variability, especially for SS, DIBL, and Ion and should be taken into account together with that in channel to get an accurate estimation on RDF. Meanwhile, higher doping concentration of extension region is suggested from the perspective of overall variability control.

Corn stover harvest increases herbicide movement to subsurface drains – Root Zone Water Quality Model simulations

USDA-ARS?s Scientific Manuscript database

BACKGROUND: Removal of crop residues for bioenergy production can alter soil hydrologic properties, but there is little information on its impact on transport of herbicides and their degradation products to subsurface drains. The Root Zone Water Quality Model, previously calibrated using measured fl...

State of science of phosphorus modeling in tile drained agricultural systems using APEX

USDA-ARS?s Scientific Manuscript database

Phosphorus losses through tile drained systems in agricultural landscapes may be causing the persistent eutrophication problems observed in surface water. The purpose of this paper is to evaluate the state of the science in the Agricultural Policy/Environmental eXtender (APEX) model related to surf...

Hierarchical Approach to 'Atomistic' 3-D MOSFET Simulation

NASA Technical Reports Server (NTRS)

Asenov, Asen; Brown, Andrew R.; Davies, John H.; Saini, Subhash

1999-01-01

We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1 micron MOSFET's. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.

Comparative Evaluation of Immediate Post-Operative Sequelae after Surgical Removal of Impacted Mandibular Third Molar with or without Tube Drain - Split-Mouth Study.

PubMed

Kumar, Barun; Bhate, Kalyani; Dolas, R S; Kumar, Sn Santhosh; Waknis, Pushkar

2016-12-01

Third molar surgery is one of the most common surgical procedures performed in general dentistry. Post-operative variables such as pain, swelling and trismus are major concerns after impacted mandibular third molar surgery. Use of passive tube drain is supposed to help reduce these immediate post-operative sequelae. The current study was designed to compare the effect of tube drain on immediate post-operative sequelae following impacted mandibular third molar surgery. To compare the post-operative sequelae after surgical removal of impacted mandibular third molar surgery with or without tube drain. Thirty patients with bilateral impacted mandibular third molars were divided into two groups: Test (with tube drain) and control (without tube drain) group. In the test group, a tube drain was inserted through the releasing incision, and kept in place for three days. The control group was left without a tube drain. The post-operative variables like, pain, swelling, and trismus were calculated after 24 hours, 72 hours, 7 days, and 15 days in both the groups and analyzed statistically using chi-square and t-test analysis. The test group showed lesser swelling as compared to control group, with the swelling variable showing statistically significant difference at post-operative day 3 and 7 (p≤ 0.05) in both groups. There were no statistically significant differences in pain and trismus variables in both the groups. The use of tube drain helps to control swelling following impacted mandibular third molar surgery. However, it does not have much effect on pain or trismus.

Aptamer-Based Carboxyl-Terminated Nanocrystalline Diamond Sensing Arrays for Adenosine Triphosphate Detection.

PubMed

Suaebah, Evi; Naramura, Takuro; Myodo, Miho; Hasegawa, Masataka; Shoji, Shuichi; Buendia, Jorge J; Kawarada, Hiroshi

2017-07-21

Here, we propose simple diamond functionalization by carboxyl termination for adenosine triphosphate (ATP) detection by an aptamer. The high-sensitivity label-free aptamer sensor for ATP detection was fabricated on nanocrystalline diamond (NCD). Carboxyl termination of the NCD surface by vacuum ultraviolet excimer laser and fluorine termination of the background region as a passivated layer were investigated by X-ray photoelectron spectroscopy. Single strand DNA (amide modification) was used as the supporting biomolecule to immobilize into the diamond surface via carboxyl termination and become a double strand with aptamer. ATP detection by aptamer was observed as a 66% fluorescence signal intensity decrease of the hybridization intensity signal. The sensor operation was also investigated by the field-effect characteristics. The shift of the drain current-drain voltage characteristics was used as the indicator for detection of ATP. From the field-effect characteristics, the shift of the drain current-drain voltage was observed in the negative direction. The negative charge direction shows that the aptamer is capable of detecting ATP. The ability of the sensor to detect ATP was investigated by fabricating a field-effect transistor on the modified NCD surface.

Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)

NASA Astrophysics Data System (ADS)

Wong, Hei; Iwai, Hiroshi; Liou, J. J.

2005-05-01

It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

An orthotopic model of murine bladder cancer.

PubMed

Dobek, Georgina L; Godbey, W T

2011-02-06

In this straightforward procedure, bladder tumors are established in female C57 mice through the use of catheterization, local cauterization, and subsequent cell adhesion. After their bladders are transurethrally catheterized and drained, animals are again catheterized to permit insertion of a platinum wire into bladders without damaging the urethra or bladder. The catheters are made of Teflon to serve as an insulator for the wire, which will conduct electrical current into the bladder to create a burn injury. An electrocautery unit is used to deliver 2.5W to the exposed end of the wire, burning away extracellular layers and providing attachment sites for carcinoma cells that are delivered in suspension to the bladder through a subsequent catheterization. Cells remain in the bladder for 90 minutes, after which the catheters are removed and the bladders allowed to drain naturally. The development of tumor is monitored via ultrasound. Specific attention is paid to the catheterization technique in the accompanying video.

Modeling hydrology and in-stream transport on drained forested lands in coastal Carolinas, U.S.A.

Treesearch

Devendra Amatya

2005-01-01

This study summarizes the successional development and testing of forest hydrologic models based on DRAINMOD that predicts the hydrology of low-gradient poorly drained watersheds as affected by land management and climatic variation. The field scale (DRAINLOB) and watershed-scale in-stream routing (DRAINWAT) models were successfully tested with water table and outflow...

A Physical Model for Shallow Groundwater Studies and the Simulation of Land Drain Performance.

ERIC Educational Resources Information Center

Parkinson, Robert; Reid, Ian

1987-01-01

Describes a two-dimensional sand-tank model that illustrates the influence of ground slope on tile drain discharge and the movement of groundwater in general. The model can be used to demonstrate the effect of topography on sub-surface water movement in agricultural catchments, thus it is a useful hydrological teaching aid. (Author/BSR)

Watershed Models for Predicting Nitrogen Loads from Artificially Drained Lands

Treesearch

R. Wayne Skaggs; George M. Chescheir; Glenn Fernandez; Devendra M. Amatya

2003-01-01

Non-point sources of pollutants originate at the field scale but water quality problems usually occur at the watershed or basin scale. This paper describes a series of models developed for poorly drained watersheds. The models use DRAINMOD to predict hydrology at the field scale and a range of methods to predict channel hydraulics and nitrogen transport. In-stream...

A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification

NASA Astrophysics Data System (ADS)

Jiang, Chunsheng; Liang, Renrong; Wang, Jing; Xu, Jun

2015-09-01

A carrier-based analytical drain current model for negative capacitance symmetric double-gate field effect transistors (NC-SDG FETs) is proposed by solving the differential equation of the carrier, the Pao-Sah current formulation, and the Landau-Khalatnikov equation. The carrier equation is derived from Poisson’s equation and the Boltzmann distribution law. According to the model, an amplified semiconductor surface potential and a steeper subthreshold slope could be obtained with suitable thicknesses of the ferroelectric film and insulator layer at room temperature. Results predicted by the analytical model agree well with those of the numerical simulation from a 2D simulator without any fitting parameters. The analytical model is valid for all operation regions and captures the transitions between them without any auxiliary variables or functions. This model can be used to explore the operating mechanisms of NC-SDG FETs and to optimize device performance.

Effectiveness of Postoperative Wound Drains in One- and Two-Level Cervical Spine Fusions

PubMed Central

Poorman, Caroline E.; Bianco, Kristina M.; Boniello, Anthony; Yang, Sun; Gerling, Michael C.

2014-01-01

Background Cervical drains have historically been used to avoid postoperative wound and respiratory complications such as excessive edema, hematoma, infection, re-intubation, delayed extubation, or respiratory distress. Recently, some surgeons have ceased using drains because they may prolong hospital stay, operative time, or patient discomfort. The objective of this retrospective case-control series is to investigate the effectiveness of postoperative drains following one- and two-level cervical fusions. Methods A chart review was conducted at a single institution from 2010-2013. Outcome measures included operative time, hospital stay, estimated blood loss and incidence of wound complications (infection, hematoma, edema, and complications with wound healing or evacuation), respiratory complications (delayed extubation, re-intubation, and respiratory treatment), and overall complications (wound complications, respiratory complications, dysphagia, and other complications). Statistical analyses including independent samples t-test, chi-square, analysis of covariance, and linear regression were used to compare patients who received a postoperative drain to those who did not. Results The study population included 39 patients who received a postoperative drain and 42 patients who did not. There were no differences in demographics between the two groups. Patients with drains showed increased operative time (100.1 vs 69.3 min, p < 0.001), hospital stay (38.9 vs. 31.7 hrs, p = 0.021), and blood loss (62.7 vs 29.1 mL, p < 0.001) compared to patients without drains. The frequency of wound complications, respiratory complications, and overall complications did not vary significantly between groups. Conclusions/Level of Evidence Cervical drains may not be necessary for patients undergoing one- and two-level cervical fusion. While there were no differences in incidence of complications between groups, patients treated with drains had significantly longer operative time and length of hospital stay. Clinical relevance This could contribute to excessive costs for patients treated with drains, despite the lack of compelling evidence of the advantages of this treatment in the literature and in the current study. PMID:25694927

Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition.

PubMed

Wu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Huang, Bo-Wen; Zhang, Yu-Xin; Wang, Shui-Jinn; Hsu, Jui-Mei

2018-03-01

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO TFTs) with high transparent gallium zinc oxide (GZO) source/drain electrodes. The influence of post-deposition annealing (PDA) temperature on GZO source/drain and device performance was studied. Device with a 300 °C annealing demonstrated excellent electrical characteristics with on/off current ratio of 2.13 × 108, saturation mobility of 10 cm2/V-s, and low subthreshold swing of 0.2 V/dec. The gate stacked LaAlO3/ZrO2 of AP-IGZO TFTs with highly transparent and conductive AP-GZO source/drain electrode show excellent gate control ability at a low operating voltage.

Simulation of the hydraulic performance of highway filter drains through laboratory models and stormwater management tools.

PubMed

Sañudo-Fontaneda, Luis A; Jato-Espino, Daniel; Lashford, Craig; Coupe, Stephen J

2017-05-23

Road drainage is one of the most relevant assets in transport infrastructure due to its inherent influence on traffic management and road safety. Highway filter drains (HFDs), also known as "French Drains", are the main drainage system currently in use in the UK, throughout 7000 km of its strategic road network. Despite being a widespread technique across the whole country, little research has been completed on their design considerations and their subsequent impact on their hydraulic performance, representing a gap in the field. Laboratory experiments have been proven to be a reliable indicator for the simulation of the hydraulic performance of stormwater best management practices (BMPs). In addition to this, stormwater management tools (SMT) have been preferentially chosen as a design tool for BMPs by practitioners from all over the world. In this context, this research aims to investigate the hydraulic performance of HFDs by comparing the results from laboratory simulation and two widely used SMT such as the US EPA's stormwater management model (SWMM) and MicroDrainage®. Statistical analyses were applied to a series of rainfall scenarios simulated, showing a high level of accuracy between the results obtained in laboratory and using SMT as indicated by the high and low values of the Nash-Sutcliffe and R 2 coefficients and root-mean-square error (RMSE) reached, which validated the usefulness of SMT to determine the hydraulic performance of HFDs.

A MECHANISTIC MODEL FOR ESTIMATING VOC EMISSIONS FROM INDUSTRIAL PROCESS DRAINS PART I: THE UNDERLYING CHANNEL. (R823335)

EPA Science Inventory

Recent research has indicated the potential for emissions of volatile organic compound
(VOCs) from industrial process drains, and a need for better understanding of the mass transfer
kinetics associated with such emissions. rn this study, a two-zone model was developed in a...

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

PubMed

Oh, S K; Song, C G; Jang, T; Kim, Kwang-Choong; Jo, Y J; Kwak, J S

2013-03-01

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.

SLD-MOSCNT: A new MOSCNT with step-linear doping profile in the source and drain regions

NASA Astrophysics Data System (ADS)

Tahne, Behrooz Abdi; Naderi, Ali

2017-01-01

In this paper, a new structure, step-linear doping MOSCNT (SLD-MOSCNT), is proposed to improve the performance of basic MOSCNTs. The basic structure suffers from band to band tunneling (BTBT). We show that using SLD profile for source and drain regions increases the horizontal distance between valence and conduction bands at gate to source/drain junction which reduces BTBT probability. SLD performance is compared with other similar structures which have recently been proposed to reduce BTBT such as MOSCNT with lightly-doped drain and source (LDDS), and with double-light doping in source and drain regions (DLD). The obtained results using a nonequilibrium Green’s function (NEGF) method show that the SLD-MOSCNT has the lowest leakage current, power consumption and delay time, and the highest current ratio and voltage gain. The ambipolar conduction in the proposed structure is very low and can be neglected. In addition, these structures can improve short-channel effects. Also, the investigation of cutoff frequency of the different structures shows that the SLD has the highest cutoff frequency. Device performance has been investigated for gate length from 8 to 20 nm which demonstrates all discussions regarding the superiority of the proposed structure are also valid for different channel lengths. This improvement is more significant especially for channel length less than 12 nm. Therefore, the SLD can be considered as a candidate to be used in the applications with high speed and low power consumption.

Measurements of the Low Frequency Gain Fluctuations of a 30 GHz High-Electron-Mobility-Transistor Cryogenic Amplifier

NASA Technical Reports Server (NTRS)

Jarosik, Norman

1994-01-01

Low frequency gain fluctuations of a 30 GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15 K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.

Anthropogenic modifications to drainage conditions on streamflow variability in the Wabash River basin, Indiana

NASA Astrophysics Data System (ADS)

Chiu, C.; Bowling, L. C.

2011-12-01

The Wabash River watershed is the largest watershed in Indiana and includes the longest undammed river reach east of the Mississippi River. The land use of the Wabash River basin began to significantly change from mixed woodland dominated by small lakes and wetlands to agriculture in the mid-1800s and agriculture is now the predominant land use. Over 80% of natural wetland areas were drained to facilitate better crop production through both surface and subsurface drainage applications. Quantifying the change in hydrologic response in this intensively managed landscape requires a hydrologic model that can represent wetlands, crop growth, and impervious area as well as subsurface and surface drainage enhancements, coupled with high resolution soil and topographic inputs. The Variable Infiltration Capacity (VIC) model wetland algorithm has been previously modified to incorporate spatially-varying estimates of water table distribution using a topographic index approach, as well as a simple urban representation. Now, the soil water characteristics curve and a derived drained to equilibrium moisture profile are used to improve the model's estimation of the water table. In order to represent subsurface (tile) drainage, the tile drainage component of subsurface flow is calculated when the simulated water table rises above a specified drain depth. A map of the current estimated extent of subsurface tile drainage for the Wabash River based on a decision tree classifier of soil drainage class, soil slope and agricultural land use is used to activate the new tile drainage feature in the VIC model, while wetland depressional storage capacity is extracted from digital elevation and soil information. This modified VIC model is used to evaluate the performance of model physical variations in the intensively managed hydrologic regime of the Wabash River system and to understand the role of surface and subsurface storage, and land use and land cover change on hydrologic change.

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gasparyan, F.; Forschungszentrum Jülich, Peter Grünberg Institute; Khondkaryan, H.

2016-08-14

The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p{sup +}-p-p{sup +} field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2–4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculatingmore » the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 10{sup 5}. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.« less

Vulnerability of drained and rewetted organic soils to climate change impacts and associated adaptation options

NASA Astrophysics Data System (ADS)

Renou-Wilson, Florence; Müller, Christoph; Wilson, David

2016-04-01

With 20% of the land covered with peat soils, Ireland needs to develop a deeper understanding among stakeholders of the potential vulnerability of peatlands and organic soils to climate change (both gradual and extreme events) in the context of current land use changes. The fate of carbon in organic soils is critical for predicting future greenhouse gas (GHG) concentrations in the atmosphere. While keeping carbon stock in organic soils (for example by rewetting drained sites) can be an effective mitigation measures to reduce CO2 emissions, adaptation options are also required to ensure their 'resilience'. Rewetting of drained organic soils has been initiated at several sites across the country with the aim to (i) reduce net GHG emissions at the source and/or (ii) create suitable conditions for carbon sequestration in active peatland habitats. We present here two sites: an industrial cutaway peatland and an extensive grassland over organic soil, where long-term (> 4 years) environmental and GHG flux (chamber) datasets in both drained and rewetted areas have provided information on the impact of annual weather variability on net ecosystem exchange (NEE). Statistical response functions estimated for gross primary production (GPP) and ecosystem respiration (Reco) were used to reconstruct annual CO2 balances using site-specific models driven by soil temperature, solar radiation, soil water table levels and leaf area index. The modification of some of the model parameters to fit predicted future climate scenarios for the region allowed potential changes in modelled NEE to be assessed. Both sites were, on average, an annual source of CO2 when drained (138 - 232 g C m-2 yr-1) and a sink when rewetted (ranging from -40 g C m-2 yr-1 in the ungrazed rewetted grassland to a maximum of -260 g C m-2 yr-1 in the rewetted cutaway). At both sites, soil temperatures and water table levels varied significantly between all years. Average NEE at each site displayed a very large standard deviation over the years suggesting a strong influence of external factors (weather variability) and vegetation change in some cases. Such wide variation in annual NEE values is not encountered in their natural counterparts within the same region. Under simulated moderate scenarios of (i) increased soil temperature (1° C) and (ii) deeper WT (-10cm) (both seasonal and/or annual), the rewetted areas always displayed a larger change (increase) in annual NEE compared to the drained areas. Furthermore, all rewetted sites became CO2 sources when both parameters were altered simultaneously over 4 years. Although positive feedbacks from vegetation may occur following such environmental changes, it is expected that the rewetted peatland areas will remain at risk under even moderate levels of climate change and may therefore require further intervention.

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

NASA Astrophysics Data System (ADS)

Cho, Yong-Jung; Kim, Woo-Sic; Lee, Yeol-Hyeong; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

2018-06-01

We investigated the mechanism of formation of the hump that occurs in the current-voltage I-V characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) that are exposed to long-term drain bias stress under illumination. Transfer characteristics showed two-stage degradation under the stress. At the beginning of the stress, the I-V characteristics shifted in the negative direction with a degradation of subthreshold slope, but the hump phenomenon developed over time in the I-V characteristics. The development of the hump was related to creation of defects, especially ionized oxygen vacancies which act as shallow donor-like states near the conduction-band minimum in a-IGZO. To further investigate the hump phenomenon we measured a capacitance-voltage C-V curve and performed two-dimensional device simulation. Stretched-out C-V for the gate-to-drain capacitance and simulated electric field distribution which exhibited large electric field near the drain side of TFT indicated that VO2+ were generated near the drain side of TFT, but the hump was not induced when VO2+ only existed near the drain side. Therefore, the degradation behavior under DBITS occurred because VO2+ were created near the drain side, then were migrated to the source side of the TFT.

Fabrication and Electrical Characterization of Deep-Submicron Trench-Isolated CMOS Device Structures.

NASA Astrophysics Data System (ADS)

Perera, Asanga Hiran

The magnitude of the extrinsic parasitic MOSFET series resistance was experimentally evaluated in the deep -submicron domain and its consequence on device performance was determined. The series resistance of depletion mode MOSFET test structures were measured for source-drain sizes as small as 0.2 μm by 0.3 μm at room temperature and 100^ circK. To build the test structures a multilevel -full electron beam lithography fabrication process was developed with a pattern overlay accuracy of 75 nm. A new positive tone novalac resist, SYSTEM-9, was developed for electron beam application. The resist had moderate sensitivity, 19-30 muC/cm ^2, and a contrast up to 14. Interrupted development and reduced developer temperature resulted in contrast enhancements of up to 125%. SYSTEM-9 had a two or three times better dry etch resistance than PMMA. A shallow trench isolation technology capable of defining 0.2 μm wide active areas was developed. A rapid thermal annealing based silicidation scheme using TiSi_2 was established. MOSFET sidewall spacer formation using PECVD SiO_2 was calibrated. Antimony and gallium were investigated as possible alternatives to arsenic and boron, respectively, and well behaved substrate diodes were successfully fabricated. Two new patterning techniques for the metal bi-layer metalization of TiW and Al, based on liftoff and reactive ion etching, were developed. The source drain resistance of the test structures was measured at room temperature and at 100^ circK. An LN_2 flushed cold chuck for low temperature device probing was designed and constructed. The temperature dependence of the current voltage characteristics and the extracted series resistance proved that current flow in the contacts was tunneling dominated. The extrinsic source-drain resistance increased rapidly as the contact size decreased below 0.5 mum, and showed an almost two order of magnitude change, when the source-drain area was reduced from 2 x 1.7 mum^2 to 0.2 x 0.3 mum^2 . The effect of this resistance increase on a CMOS inverter switching speed was estimated. A first order empirical model to predict the series resistance was also formulated. Good correspondence was observed between results from the device simulator PISCES-2B and measured data for larger source-drain sizes.

Draining characteristics of hemispherically bottomed cylinders in a low-gravity environment

NASA Technical Reports Server (NTRS)

Symons, E. P.

1978-01-01

An experimental investigation was conducted to study the phenomenon of vapor ingestion during the draining of a scale model, hemispherically bottomed cylindrical tank in a low-gravity environment. Where possible, experimental results are compared with previously obtained numerical predictions. It was observed that certain combinations of Weber and Bond number resulted in draining-induced axisymmetric slosh motion. The periods of the slosh waves were correlated with the square root of the draining parameter, the ratio (Weber number)/(Bond number plus one), as was the quantity of liquid remaining in the tank when vapor was ingested into the outlet line.

Comparative Evaluation of Immediate Post-Operative Sequelae after Surgical Removal of Impacted Mandibular Third Molar with or without Tube Drain - Split-Mouth Study

PubMed Central

Bhate, Kalyani; Dolas, RS; Kumar, SN Santhosh; Waknis, Pushkar

2016-01-01

Introduction Third molar surgery is one of the most common surgical procedures performed in general dentistry. Post-operative variables such as pain, swelling and trismus are major concerns after impacted mandibular third molar surgery. Use of passive tube drain is supposed to help reduce these immediate post-operative sequelae. The current study was designed to compare the effect of tube drain on immediate post-operative sequelae following impacted mandibular third molar surgery. Aim To compare the post-operative sequelae after surgical removal of impacted mandibular third molar surgery with or without tube drain. Materials and Methods Thirty patients with bilateral impacted mandibular third molars were divided into two groups: Test (with tube drain) and control (without tube drain) group. In the test group, a tube drain was inserted through the releasing incision, and kept in place for three days. The control group was left without a tube drain. The post-operative variables like, pain, swelling, and trismus were calculated after 24 hours, 72 hours, 7 days, and 15 days in both the groups and analyzed statistically using chi-square and t-test analysis. Results The test group showed lesser swelling as compared to control group, with the swelling variable showing statistically significant difference at post-operative day 3 and 7 (p≤ 0.05) in both groups. There were no statistically significant differences in pain and trismus variables in both the groups. Conclusion The use of tube drain helps to control swelling following impacted mandibular third molar surgery. However, it does not have much effect on pain or trismus. PMID:28209003

Using a Process Based Model to Simulate the Effects of Drainage and Land Use Change on Hydrology, and Sediment and Nutrient Transport in the Midwestern United States

NASA Astrophysics Data System (ADS)

Downer, C. W.; Pradhan, N. R.; Skahill, B. E.; Wahl, M.; Turnbull, S. J.

2015-12-01

Historically the Midwestern United State was a region dominated by prairie grasses and wetlands. To make use of the rich soils underlying these fertile environments, farmers converted the land to agriculture and currently the Midwest is a region of intensive agricultural production, with agriculture being a predominant land use. The Midwest is a region of gentle slopes, tight soils, and high water tables, and in order to make the lands suitable for agriculture, farmers have installed extensive networks of ditches to drain off excess surface water and subsurface tiles to lower the water table and remove excess soil water in the root zone that can stress common row crops, such as corn and soybeans. The combination of tiles, ditches, and intensive agricultural land practices radically alters the landscape and hydrology. As part of the Minnesota River Basin Integrated Study we are simulating nested watersheds in a sub-basin of the Minnesota River Basin, Seven Mile Creek, using the physics-based watershed model GSSHA (Gridded Surface Subsurface Hydrologic Analysis) to simulate water, sediment, and nutrients. Representative of the larger basin, more than 80% of the land in the watershed is dedicated to agricultural practices. From a process perspective, the hydrology is complicated, with snow accumulation and melt, frozen soil, and tile drains all being important processes within the watershed. In this study we attempt to explicitly simulate these processes, including the tile drains, which are simulated as a network of subsurface pipes that collect water from the local water table. Within the watershed, tiles discharge to both the ditch/stream network as well as overland locations, where the tile discharge appears to initiate gullies and exacerbate overland erosion. Testing of the methods on smaller basins demonstrates the ability of the model to simulate measured tile flow. At the larger scale, the model demonstrates ability to simulate flow and sediments. Sparse nutrient data limit the assessment of nutrient simulations. The models are being used to asses an array of potential future land use scenarios, including predevelopment and increased agricultural use. Results from these simulations will be presented. Preliminary results indicate that tile drains increase discharge and erosion in the watershed.

Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pasadas, Francisco, E-mail: Francisco.Pasadas@uab.cat; Jiménez, David

2015-12-28

Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge, and capacitance. In this work, we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been includedmore » considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.« less

Intracerebral hemorrhage after external ventricular drain placement: an evaluation of risk factors for post-procedural hemorrhagic complications.

PubMed

Rowe, A Shaun; Rinehart, Derrick R; Lezatte, Stephanie; Langdon, J Russell

2018-03-07

The objective of this study was to evaluate and identify the risk factors for developing a new or enlarged intracranial hemorrhage (ICH) after the placement of an external ventricular drain. A single center, nested case-control study of individuals who received an external ventricular drain from June 1, 2011 to June 30, 2014 was conducted at a large academic medical center. A bivariate analysis was conducted to compare those individuals who experienced a post-procedural intracranial hemorrhage to those who did not experience a new bleed. The variables identified as having a p-value less than 0.15 in the bivariate analysis were then evaluated using a multivariate logistic regression model. Twenty-seven of the eighty-one study participants experienced a new or enlarged intracranial hemorrhage after the placement of an external ventricular drain. Of these twenty-seven patients, 6 individuals received an antiplatelet within ninety-six hours of external ventricular drain placement (p = 0.024). The multivariate logistic regression model identified antiplatelet use within 96 h of external ventricular drain insertion as an independent risk factor for post-EVD ICH (OR 13.1; 95% CI 1.95-88.6; p = 0.008). Compared to those study participants who did not receive an antiplatelet within 96 h of external ventricular drain placement, those participants who did receive an antiplatelet were 13.1 times more likely to exhibit a new or enlarged intracranial hemorrhage.

Modeling the impact of nitrogen fertilizer application and tile drain configuration on nitrate leaching using SWAT

USDA-ARS?s Scientific Manuscript database

Recently, the Soil and Water Assessment Tool (SWAT) was revised to improve the partitioning of runoff and tile drainage in poorly drained soils by modifying the algorithm for computing the soil moisture retention parameter. In this study, the revised SWAT model was used to evaluate the sensitivity a...

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

2017-11-01

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

NASA Astrophysics Data System (ADS)

Myodo, Miho; Inaba, Masafumi; Ohara, Kazuyoshi; Kato, Ryogo; Kobayashi, Mikinori; Hirano, Yu; Suzuki, Kazuma; Kawarada, Hiroshi

2015-05-01

Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.

Back bias induced dynamic and steep subthreshold swing in junctionless transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parihar, Mukta Singh; Kranti, Abhinav, E-mail: akranti@iiti.ac.in

In this work, we analyze back bias induced steep and dynamic subthreshold swing in junctionless double gate transistors operated in the asymmetric mode. This impact ionization induced dynamic subthreshold swing is explained in terms of the ratio between minimum hole concentration and peak electron concentration, and the dynamic change in the location of the conduction channel with applied front gate voltage. The reason for the occurrence of impact ionization at sub-bandgap drain voltages in silicon junctionless transistors is also accounted for. The optimum junctionless transistor operating at a back gate bias of −0.9 V, achieves over 5 orders of change inmore » drain current at a gate overdrive of 200 mV and drain bias of 1 V. These results for junctionless transistors are significantly better than those exhibited by silicon tunnel field effect transistors operating at the same drain bias.« less

Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

NASA Astrophysics Data System (ADS)

Lee, Sol Kyu; Seok, Ki Hwan; Chae, Hee Jae; Lee, Yong Hee; Han, Ji Su; Jo, Hyeon Ah; Joo, Seung Ki

2017-03-01

We report a novel method to reduce source and drain (S/D) resistances, and to form a lightly doped layer (LDL) of bottom-gate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). For application in driving TFTs, which operate under high drain voltage condition, poly-Si TFTs are needed in order to attain reliability against hot-carriers as well as high field-effect mobility (μFE). With an additional doping on the p+ Si layer, sheet resistance on S/D was reduced by 37.5% and an LDL was introduced between the channel and drain. These results contributed to not only a lower leakage current and gate-induced drain leakage, but also high immunity of kink-effect and hot-carrier stress. Furthermore, the measured electrical characteristics exhibited a steep subthreshold slope of 190 mV/dec and high μFE of 263 cm2/Vs.

Short-term effects of salinity reduction and drainage on salt-marsh biogeochemical cycling and Spartina (Cordgrass) production

USGS Publications Warehouse

Portnoy, J.W.; Valiela, I.

1997-01-01

To assess the biogeochemical effects of tidal restrictions on salt-marsh sulfur cycling and plant growth, cores of short-form Spartina alterniflora peat were desalinated and kept either waterlogged or drained in greenhouse microcosms. Changes in net Spartina production, and porewater and solid phase chemistry of treated cores were compared to natural conditions in the field collection site over a 21-mo period. Net production among treatments increased significantly in drained and waterlogged peat compared to field conditions during the first growing season. Constantly high sulfide in waterlogged cores accompanied reduced plant growth. Aeration invigorated growth in drained cores but led to oxidization of sulfide minerals and to lowered pH. During the second growing season, growth declined in the drained treatment, probably because of acidification and decreased dissolved inorganic nitrogen. Results are pertinent to the success of current wetland protection and restoration activities in the coastal zone.

Remaining Sites Verification Package for the 100-F-46, 119-F Stack Sampling French Drain, Waste Site Reclassification Form 2008-021

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. M. Capron

2008-08-08

The 100-F-46 french drain consisted of a 1.5 to 3 m long, vertically buried, gravel-filled pipe that was approximately 1 m in diameter. Also included in this waste site was a 5 cm cast-iron pipeline that drained condensate from the 119-F Stack Sampling Building into the 100-F-46 french drain. In accordance with this evaluation, the confirmatory sampling results support a reclassification of this site to No Action. The current site conditions achieve the remedial action objectives and the corresponding remedial action goals established in the Remaining Sites ROD. The results of confirmatory sampling show that residual contaminant concentrations do notmore » preclude any future uses and allow for unrestricted use of shallow zone soils. The results also demonstrate that residual contaminant concentrations are protective of groundwater and the Columbia River.« less

Volatilization of low vapor pressure--volatile organic compounds (LVP-VOCs) during three cleaning products-associated activities: Potential contributions to ozone formation.

PubMed

Shin, Hyeong-Moo; McKone, Thomas E; Bennett, Deborah H

2016-06-01

There have been many studies to reduce ozone formation mostly from volatile organic compound (VOC) sources. However, the role of low vapor pressure (LVP)-VOCs from consumer products remains mostly unexplored and unaddressed. This study explores the impact of high production volume LVP-VOCs on ozone formation from three cleaning products-associated activities (dishwashing, clothes washing, and surface cleaning). We develop a model framework to account for the portion available for ozone formation during the use phase and from the down-the-drain disposal. We apply experimental studies that measured emission rates or models that were developed for estimating emission rates of organic compounds during the use phase. Then, the fraction volatilized (fvolatilized) and the fraction disposed down the drain (fdown-the-drain) are multiplied by the portion available for ozone formation for releases to the outdoor air (fO3|volatilized) and down-the-drain (fO3|down-the-drain), respectively. Overall, for chemicals used in three specific cleaning-product uses, fvolatilized is less than 0.6% for all studied LVP-VOCs. Because greater than 99.4% of compounds are disposed of down the drain during the use phase, when combined with fO3|volatilized and fO3|down-the-drain, the portion available for ozone formation from the direct releases to outdoor air and the down-the-drain disposal is less than 0.4% and 0.2%, respectively. The results from this study indicate that the impact of the studied LVP-VOCs on ozone formation is very sensitive to what occurs during the use phase and suggest the need for future research on experimental work at the point of use. Copyright © 2016 Elsevier Ltd. All rights reserved.

Effect of Ion Flux (Dose Rate) in Source-Drain Extension Ion Implantation for 10-nm Node FinFET and Beyond on 300/450mm Platforms

NASA Astrophysics Data System (ADS)

Shen, Ming-Yi

The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications of ion implantation (I/I) is source-drain extension (SDE) I/I for the silicon FinFET device. This study investigated the dose rate effects on the material properties and device performance of the 10-nm node silicon FinFET. In order to gain better understanding of the dose rate effects, the dose rate study is based on Synopsys Technology CAD (TCAD) process and device simulations that are calibrated and validated using available structural silicon fin samples. We have successfully shown that the kinetic monte carlo (KMC) I/I simulation can precisely model both the silicon amorphization and the arsenic distribution in the fin by comparing the KMC simulation results with TEM images. The results of the KMC I/I simulation show that at high dose rate more activated arsenic dopants were in the source-drain extension (SDE) region. This finding matches with the increased silicon amorphization caused by the high dose-rate I/I, given that the arsenic atoms could be more easily activated by the solid phase epitaxial regrowth process. This increased silicon amorphization led to not only higher arsenic activation near the spacer edge, but also less arsenic atoms straggling into the channel. Hence, it is possible to improve the throughput of the ion implanter when the dopants are implanted at high dose rate if the same doping level with a lower wafer dose can be achieved. In addition, the leakage current might also be reduced due to less undesired dopants in the channel. However, the twin defects from the problematic Si{111} recrystallization is well-known to cause excessive leakage current to the FinFET. This drawback can offset the benefits of the high dose rate I/I mentioned above. This work produced the first attempt at simulating the electrical impact of twin defects on advanced-node (10 nm) FinFET device performance. It was found that the high dose-rate I/I causes more twin defects in the silicon fin, and the physical locations of these defects were close to the channel. The defects undesirably induced trap-assisted band-to-band tunneling near the drain, which increased the leakage current. This issue could be mitigated by using asymmetrical gate overlap/underlap design or thicker spacer for SDE I/I so that the twin defects are not located in the depletion region near the drain.

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Gyrotropic Zener tunneling and nonlinear IV curves in the zero-energy Landau level of graphene in a strong magnetic field.

PubMed

Laitinen, Antti; Kumar, Manohar; Hakonen, Pertti; Sonin, Edouard

2018-01-12

We have investigated tunneling current through a suspended graphene Corbino disk in high magnetic fields at the Dirac point, i.e. at filling factor ν = 0. At the onset of the dielectric breakdown the current through the disk grows exponentially before ohmic behaviour, but in a manner distinct from thermal activation. We find that Zener tunneling between Landau sublevels dominates, facilitated by tilting of the source-drain bias potential. According to our analytic modelling, the Zener tunneling is strongly affected by the gyrotropic force (Lorentz force) due to the high magnetic field.

Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

2018-04-01

A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

PubMed

Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

2012-08-19

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach

NASA Astrophysics Data System (ADS)

Arefinia, Zahra; Orouji, Ali A.

2009-02-01

The concept of dual-material gate (DMG) is applied to the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions, and the features exhibited by the resulting new structure, i.e., the DMG-CNTFET structure, have been examined for the first time by developing a two-dimensional (2D) full quantum simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. The results show DMG-CNTFET decreases significantly leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to the single material gate counterparts CNTFET. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate metals. Therefore, this work provides an incentive for further experimental exploration.

An underlap field-effect transistor for electrical detection of influenza

NASA Astrophysics Data System (ADS)

Lee, Kwang-Won; Choi, Sung-Jin; Ahn, Jae-Hyuk; Moon, Dong-Il; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu

2010-01-01

An underlap channel-embedded field-effect transistor (FET) is proposed for label-free biomolecule detection. Specifically, silica binding protein fused with avian influenza (AI) surface antigen and avian influenza antibody (anti-AI) were designed as a receptor molecule and a target material, respectively. The drain current was significantly decreased after the binding of negatively charged anti-AI on the underlap channel. A set of control experiments supports that only the biomolecules on the underlap channel effectively modulate the drain current. With the merits of a simple fabrication process, complementary metal-oxide-semiconductor compatibility, and enhanced sensitivity, the underlap FET could be a promising candidate for a chip-based biosensor.

Unusual instability mode of transparent all oxide thin film transistor under dynamic bias condition

NASA Astrophysics Data System (ADS)

Oh, Himchan; Hwang, Chi-Sun; Pi, Jae-Eun; Ki Ryu, Min; Ko Park, Sang-Hee; Yong Chu, Hye

2013-09-01

We report a degradation behavior of fully transparent oxide thin film transistor under dynamic bias stress which is the condition similar to actual pixel switching operation in active matrix display. After the stress test, drain current increased while the threshold voltage was almost unchanged. We found that shortening of effective channel length is leading cause of increase in drain current. Electrons activate the neutral donor defects by colliding with them during short gate-on period. These ionized donors are stabilized during the subsequent gate-off period due to electron depletion. This local increase in doping density reduces the channel length.

Characteristics of camel-gate structures with active doping channel profiles

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui; Lour, Wen-Shiung; Laih, Lih-Wen; Liu, Rong-Chau; Liu, Wen-Chau

1996-03-01

In this paper, we demonstrate the influence of channel doping profile on the performances of camel-gate field effect transistors (CAMFETs). For comparison, single and tri-step doping channel structures with identical doping thickness products are employed, while other parameters are kept unchanged. The results of a theoretical analysis show that the single doping channel FET with lightly doping active layer has higher barrier height and drain-source saturation current. However, the transconductance is decreased. For a tri-step doping channel structure, it is found that the output drain-source saturation current and the barrier height are enhanced. Furthermore, the relatively voltage independent performances are improved. Two CAMFETs with single and tri-step doping channel structures have been fabricated and discussed. The devices exhibit nearly voltage independent transconductances of 144 mS mm -1 and 222 mS mm -1 for single and tri-step doping channel CAMFETs, respectively. The operation gate voltage may extend to ± 1.5 V for a tri-step doping channel CAMFET. In addition, the drain current densities of > 750 and 405 mA mm -1 are obtained for the tri-step and single doping CAMFETs. These experimental results are inconsistent with theoretical analysis.

Current instability and burnout of HEMT structures

NASA Astrophysics Data System (ADS)

Vashchenko, V. A.; Sinkevitch, V. F.

1996-06-01

The burnout mechanism and region of high conductivity formation under breakdown of pseudomorphic GalnAs/GaAlAs and GaAs/GaAlAs HEMT structures have been studied in a pulsed and direct current (d.c.) regime. Peculiarities of the HEMT breakdown have been compared with a GaAs MESFET structure of the same topology. It appears that in all types of investigated structures the drain voltage increase is limited by the transition into a high conductivity state as a result of "parasitic" avalanche-injection conductivity modulation of the undoped GaAs or i-GaAs layer. It has been established that the transition into a high conductivity state is caused by holes from the drain avalanche region in the channel and is the result of a mutual intensification of the avalanche generation rate near the drain and the injection level from the source contact. It turns out that under a typical gate bias operation the transition in the high conductivity state is accompanied by a negative differential conductivity (NDC) and results in the formation of high current density filaments. The resulting high local overheating in the filament region is the cause of local melting and burnout of the HEMT structures.

Broadband pH-Sensing Organic Transistors with Polymeric Sensing Layers Featuring Liquid Crystal Microdomains Encapsulated by Di-Block Copolymer Chains.

PubMed

Seo, Jooyeok; Song, Myeonghun; Jeong, Jaehoon; Nam, Sungho; Heo, Inseok; Park, Soo-Young; Kang, Inn-Kyu; Lee, Joon-Hyung; Kim, Hwajeong; Kim, Youngkyoo

2016-09-14

We report broadband pH-sensing organic field-effect transistors (OFETs) with the polymer-dispersed liquid crystal (PDLC) sensing layers. The PDLC layers are prepared by spin-coating using ethanol solutions containing 4-cyano-4'-pentyl-biphenyl (5CB) and a diblock copolymer (PAA-b-PCBOA) that consists of LC-philic block [poly(4-cyano-biphenyl-4-oxyundecyl acrylate) (PCBOA)] and acrylic acid block [poly(acrylic acid) (PAA)]. The spin-coated sensing layers feature of 5CB microdomains (<5 μm) encapsulated by the PAA-b-PCBOA polymer chains. The resulting LC-integrated-OFETs (PDLC-i-OFETs) can detect precisely and reproducibly a wide range of pH with only small amounts (10-40 μL) of analyte solutions in both static and dynamic perfusion modes. The positive drain current change is measured for acidic solutions (pH < 7), whereas basic solutions (pH > 7) result in the negative change of drain current. The drain current trend in the present PDLC-i-OFET devices is explained by the shrinking-expanding mechanism of the PAA chains in the diblock copolymer layers.

Quantum Mechanical Study of Nanoscale MOSFET

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Development and fabrication of low ON resistance high current vertical VMOS power FETs

NASA Technical Reports Server (NTRS)

Kay, S.

1979-01-01

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Effect of inlet modelling on surface drainage in coupled urban flood simulation

NASA Astrophysics Data System (ADS)

Jang, Jiun-Huei; Chang, Tien-Hao; Chen, Wei-Bo

2018-07-01

For a highly developed urban area with complete drainage systems, flood simulation is necessary for describing the flow dynamics from rainfall, to surface runoff, and to sewer flow. In this study, a coupled flood model based on diffusion wave equations was proposed to simulate one-dimensional sewer flow and two-dimensional overland flow simultaneously. The overland flow model provides details on the rainfall-runoff process to estimate the excess runoff that enters the sewer system through street inlets for sewer flow routing. Three types of inlet modelling are considered in this study, including the manhole-based approach that ignores the street inlets by draining surface water directly into manholes, the inlet-manhole approach that drains surface water into manholes that are each connected to multiple inlets, and the inlet-node approach that drains surface water into sewer nodes that are connected to individual inlets. The simulation results were compared with a high-intensity rainstorm event that occurred in 2015 in Taipei City. In the verification of the maximum flood extent, the two approaches that considered street inlets performed considerably better than that without street inlets. When considering the aforementioned models in terms of temporal flood variation, using manholes as receivers leads to an overall inefficient draining of the surface water either by the manhole-based approach or by the inlet-manhole approach. Using the inlet-node approach is more reasonable than using the inlet-manhole approach because the inlet-node approach greatly reduces the fluctuation of the sewer water level. The inlet-node approach is more efficient in draining surface water by reducing flood volume by 13% compared with the inlet-manhole approach and by 41% compared with the manhole-based approach. The results show that inlet modeling has a strong influence on drainage efficiency in coupled flood simulation.

N loss to drain flow and N2O emissions from a corn-soybean rotation with winter rye.

PubMed

Gillette, K; Malone, R W; Kaspar, T C; Ma, L; Parkin, T B; Jaynes, D B; Fang, Q X; Hatfield, J L; Feyereisen, G W; Kersebaum, K C

2018-03-15

Anthropogenic perturbation of the global nitrogen cycle and its effects on the environment such as hypoxia in coastal regions and increased N 2 O emissions is of increasing, multi-disciplinary, worldwide concern, and agricultural production is a major contributor. Only limited studies, however, have simultaneously investigated NO 3 - losses to subsurface drain flow and N 2 O emissions under corn-soybean production. We used the Root Zone Water Quality Model (RZWQM) to evaluate NO 3 - losses to drain flow and N 2 O emissions in a corn-soybean system with a winter rye cover crop (CC) in central Iowa over a nine year period. The observed and simulated average drain flow N concentration reductions from CC were 60% and 54% compared to the no cover crop system (NCC). Average annual April through October cumulative observed and simulated N 2 O emissions (2004-2010) were 6.7 and 6.0kgN 2 O-Nha -1 yr -1 for NCC, and 6.2 and 7.2kgNha -1 for CC. In contrast to previous research, monthly N 2 O emissions were generally greatest when N loss to leaching were greatest, mostly because relatively high rainfall occurred during the months fertilizer was applied. N 2 O emission factors of 0.032 and 0.041 were estimated for NCC and CC using the tested model, which are similar to field results in the region. A local sensitivity analysis suggests that lower soil field capacity affects RZWQM simulations, which includes increased drain flow nitrate concentrations, increased N mineralization, and reduced soil water content. The results suggest that 1) RZWQM is a promising tool to estimate N 2 O emissions from subsurface drained corn-soybean rotations and to estimate the relative effects of a winter rye cover crop over a nine year period on nitrate loss to drain flow and 2) soil field capacity is an important parameter to model N mineralization and N loss to drain flow. Published by Elsevier B.V.

Experiences with the FIDAP code in analysis of a natural convection problem of an LMR primary heat transport system.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dean, E. M.; Shin, Y. W.

1999-02-24

The Experimental Breeder Reactor II (EBR-II) at Argonne National Laboratory (ANL) West in Idaho is currently undergoing a plant closing operation, and a number of technical issues need to be addressed. This paper is related to the heat transfer analysis support effort performed for the upcoming draining operation of the primary sodium from the primary system tank. The issue addressed was how much of heat input would be required to the sodium if it were to be maintained in the liquid state during the prolonged period of the draining operation. The fluid dynamics analysis package FIDAP Code of Fluent Incorporatedmore » was used to model the primary tank system. It was possible to obtain solutions to the model in most of the cases considered, which provided the needed information for the project. However, certain appropriate choices of the solution algorithms were necessary in certain cases and in addition certain special measures had to be followed in order to successfully utilize the solution. In certain other instances, only some entirely different algorithm was the only successful choice, while in some other limited instances none of the algorithms or the special measures that were satisfactory for the earlier cases proved successful. Several configurations of the model with varying sodium levels to represent the quasi-steady state draining operation are considered. The reference configuration of the model was first calculated and the results are compared with measurement data. The model thus benchmarked to the reference case then was calculated for other model configurations. This paper discusses details of the experiences we gained, including successes, the difficulties we had to overcome, and in some instances the eventual failures. The results of the successful calculations are first presented. For each of the model configurations calculated, various computational aspects are then discussed in view of the numerical stability, convergence, and robustness of the solution algorithms in use. Finally, effects of certain model simplifications on the solutions and performance of the solution algorithms are discussed.« less

Identifying Hydrologic Processes in Agricultural Watersheds Using Precipitation-Runoff Models

USGS Publications Warehouse

Linard, Joshua I.; Wolock, David M.; Webb, Richard M.T.; Wieczorek, Michael

2009-01-01

Understanding the fate and transport of agricultural chemicals applied to agricultural fields will assist in designing the most effective strategies to prevent water-quality impairments. At a watershed scale, the processes controlling the fate and transport of agricultural chemicals are generally understood only conceptually. To examine the applicability of conceptual models to the processes actually occurring, two precipitation-runoff models - the Soil and Water Assessment Tool (SWAT) and the Water, Energy, and Biogeochemical Model (WEBMOD) - were applied in different agricultural settings of the contiguous United States. Each model, through different physical processes, simulated the transport of water to a stream from the surface, the unsaturated zone, and the saturated zone. Models were calibrated for watersheds in Maryland, Indiana, and Nebraska. The calibrated sets of input parameters for each model at each watershed are discussed, and the criteria used to validate the models are explained. The SWAT and WEBMOD model results at each watershed conformed to each other and to the processes identified in each watershed's conceptual hydrology. In Maryland the conceptual understanding of the hydrology indicated groundwater flow was the largest annual source of streamflow; the simulation results for the validation period confirm this. The dominant source of water to the Indiana watershed was thought to be tile drains. Although tile drains were not explicitly simulated in the SWAT model, a large component of streamflow was received from lateral flow, which could be attributed to tile drains. Being able to explicitly account for tile drains, WEBMOD indicated water from tile drains constituted most of the annual streamflow in the Indiana watershed. The Nebraska models indicated annual streamflow was composed primarily of perennial groundwater flow and infiltration-excess runoff, which conformed to the conceptual hydrology developed for that watershed. The hydrologic processes represented in the parameter sets resulting from each model were comparable at individual watersheds, but varied between watersheds. The models were unable to show, however, whether hydrologic processes other than those included in the original conceptual models were major contributors to streamflow. Supplemental simulations of agricultural chemical transport could improve the ability to assess conceptual models.

Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun

The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.

Vertical architecture for enhancement mode power transistors based on GaN nanowires

NASA Astrophysics Data System (ADS)

Yu, F.; Rümmler, D.; Hartmann, J.; Caccamo, L.; Schimpke, T.; Strassburg, M.; Gad, A. E.; Bakin, A.; Wehmann, H.-H.; Witzigmann, B.; Wasisto, H. S.; Waag, A.

2016-05-01

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

SWAT Model Prediction of Phosphorus Loading in a South Carolina Karst Watershed with a Downstream Embayment

Treesearch

Devendra M. Amatya; Manoj K. Jha; Thomas M. Williams; Amy E. Edwards; Daniel R. Hitchcock

2013-01-01

The SWAT model was used to predict total phosphorus (TP) loadings for a 1555-ha karst watershed—Chapel Branch Creek (CBC)—which drains to a lake via a reservoir-like embayment (R-E). The model was first tested for monthly streamflow predictions from tributaries draining three potential source areas as well as the downstream R-E, followed by TP loadings using data...

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Zhu, Hui; Meng, Xiao; Zheng, Xiang; Yang, Ying; Feng, Shiwei; Zhang, Yamin; Guo, Chunsheng

2018-07-01

We studied how substrate thinning affected the electronic transport characteristics of AlGaN/GaN HEMTs. By thinning their sapphire substrate from 460 μm to 80 μm, we varied the residual stress in these HEMTs. The thinned sample showed decreased drain-source current and occurrence of kink effect. Furthermore, shown by current transient measurements and time constant analysis, the detrapping behaviors of trap states shifted toward a larger time constant, and the detrapping behavior under the gate and in the gate-drain access region showed increased amplitude. By using pulsed current-voltage measurements, the thinned sample showed a positive shift of the threshold voltage, a decrease in peak transconductance, and an aggravation in current collapse, as compared with the thick one. The degradation of electrical behavior were associated with the structural degradation, as confirmed by the increase of pit density on the thinned sample surface.

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Sub-THz Imaging Using Non-Resonant HEMT Detectors.

PubMed

Delgado-Notario, Juan A; Velazquez-Perez, Jesus E; Meziani, Yahya M; Fobelets, Kristel

2018-02-10

Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si Schottky-gated MODFETs (Modulation-doped Field-Effect Transistor) was performed. The response of the strained-Si MODFET has been characterized at two frequencies: 150 and 300 GHz: The DC drain-to-source voltage transducing the THz radiation (photovoltaic mode) of 250-nm gate length transistors exhibited a non-resonant response that agrees with theoretical models and physics-based simulations of the electrical response of the transistor. When imposing a weak source-to-drain current of 5 μA, a substantial increase of the photoresponse was found. This increase is translated into an enhancement of the responsivity by one order of magnitude as compared to the photovoltaic mode, while the NEP (Noise Equivalent Power) is reduced in the subthreshold region. Strained-Si MODFETs demonstrated an excellent performance as detectors in THz imaging.

A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations

NASA Astrophysics Data System (ADS)

Hosenfeld, Fabian; Horst, Fabian; Iñíguez, Benjamín; Lime, François; Kloes, Alexander

2017-11-01

Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm channel length. Modeling quantum mechanical effects including SD tunneling has gained more importance specially for compact model developers. The non-equilibrium Green's function (NEGF) has become a state-of-the-art method for nano-scaled device simulation in the past years. In the sense of a multi-scale simulation approach it is necessary to bridge the gap between compact models with their fast and efficient calculation of the device current, and numerical device models which consider quantum effects of nano-scaled devices. In this work, an NEGF based analytical model for nano-scaled double-gate (DG) MOSFETs is introduced. The model consists of a closed-form potential solution of a classical compact model and a 1D NEGF formalism for calculating the device current, taking into account quantum mechanical effects. The potential calculation omits the iterative coupling and allows the straightforward current calculation. The model is based on a ballistic NEGF approach whereby backscattering effects are considered as second order effect in a closed-form. The accuracy and scalability of the non-iterative DG MOSFET model is inspected in comparison with numerical NanoMOS TCAD data for various channel lengths. With the help of this model investigations on short-channel and temperature effects are performed.

Accuracy of surgical wound drainage measurements: an analysis and comparison.

PubMed

Yue, Brian; Nizzero, Danielle; Zhang, Chunxiao; van Zyl, Natasha; Ting, Jeannette

2015-05-01

Surgical drain tube readings can influence the clinical management of the post-operative patient. The accuracy of these readings has not been documented in the current literature and this experimental study aims to address this paucity. Aliquots (10, 25, 40 and 90 mL) of black tea solution prepared to mimic haemoserous fluid were injected into UnoVac, RedoVac and Jackson-Pratt drain tubes. Nursing and medical staff from a tertiary hospital were asked to estimate drain volumes by direct observation; analysis of variance was performed on the results and significance level was set at 0.05. Doctors and nurses are equally accurate in estimating drain tube volumes. Jackson-Pratt systems were found to be the most accurate for intermediate volumes of 25 and 40 mL. For extreme of volumes (both high and low), all drainage systems were inaccurate. This study suggests that for intermediate volumes (25 and 40 mL), Jackson-Pratt is the drainage system of choice. The accuracy of volume measurement is diminished at the extremes of drain volumes; emptying of drainage systems is recommended to avoid overfilling of drainage systems. © 2014 Royal Australasian College of Surgeons.

Hydraulic characteristics of an underdrained irrigation circle, Muskegon County wastewater disposal system, Michigan

USGS Publications Warehouse

McDonald, M.G.

1980-01-01

Muskegon County, Michigan, disposes of wastewater by spray irrigating farmland on its waste-disposal site. Buried drains in the highly permeable unconfined aquifer at the site control the level of the water table. Hydraulic conductivity of the aquifer and drain-leakance, the reciprocal of resistance to flow into the drains, was determined at a representative irrigation circle while calibrating a model of the groundwater flow system. Hydraulic conductivity is 0.00055 m/sec, in the north zone of the circle, and 0.00039 m/sec in the south zone. Drain leakance -6 -6 is low in both zones: 2.9 x 10m/sec in the north and 9.5 x 10 m/sec in the south. Low drain leakance is responsible for waterlogging when irrigation rates are maintained at design levels. The capacity of the study circle to accept wastewater is 35 percent less than design capacity.

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed Central

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc. PMID:26039589

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE PAGES

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; ...

2017-10-23

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Integrated MOSFET-Embedded-Cantilever-Based Biosensor Characteristic for Detection of Anthrax Simulant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mostafa, Salwa; Lee, Ida; Islam, Syed K

2011-01-01

In this work, MOSFET-embedded cantilevers are configured as microbial sensors for detection of anthrax simulants, Bacillus thuringiensis. Anthrax simulants attached to the chemically treated gold-coated cantilever cause changes in the MOSFET drain current due to the bending of the cantilever which indicates the detection of anthrax simulant. Electrical properties of the anthrax simulant are also responsible for the change in the drain current. The test results suggest a detection range of 10 L of stimulant test solution (a suspension population of 1.3 107 colony-forming units/mL diluted in 40% ethanol and 60% deionized water) with a linear response of 31 A/more » L.« less

Regenerative switching CMOS system

DOEpatents

Welch, James D.

1998-01-01

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

Regenerative switching CMOS system

DOEpatents

Welch, J.D.

1998-06-02

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

EVALUATION OF FABRIC MEMBRANES FOR USE IN SALTSTONE DRAIN WATER SYSTEM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pickenheim, B.; Miller, D.; Burket, P.

2012-03-08

Saltstone Disposal Unit 2 contains a sheet drain fabric intended to separate solids from drain water to be returned to the Salt Feed Tank. A similar system installed in Vault 4 appears to be ineffective in keeping solids out of the drain water return lines. Waste Solidification Engineering is considering installation of an additional fabric membrane to supplement the existing sheet drain in SDU 2. Amerdrain 200 is the product currently installed in SDU 2. This product is no longer available, so Sitedrain 94 was used as the replacement product in this testing. Fabrics with apparent opening sizes of 10,more » 25, 50 and 100 microns were evaluated. These fabrics were evaluated under three separate test conditions, a water flow test, a solids retention test and a grout pour test. A flow test with water showed that installation of an additional filter layer will predictably reduce the theoretical flux through the sheet drain. The manufacturer reports the flux for Sitedrain 94 as 150 gpm/ft{sup 2} by ASTM D-4491. This compares reasonably well with the 117 gpm/ft{sup 2} obtained in this testing. A combination of the 10 micron fabric with Sitedrain 94 could be expected to decrease flux by about 10 times as compared to Sitedrain 94 alone. The different media were used to filter a slag and fly ash mixture from water. Slag historically has the smallest nominal particle size of the premix components. Cement was omitted from the test because of its reactivity with water would prohibit accurately particle size measurements of the filtered samples. All four media sizes were able to remove greater than 95% of particles larger than 100 microns from the slurry. The smaller opening sizes were increasingly effective in removing more particles. The 10 micron filter captured 15% of the total amount of solids used in the test. This result implies that some insoluble particles may still be able to enter the drain water collection system, although the overall solids rejection is significantly improved over the current design. Test boxes were filled with grout to evaluate the performance of the sheet drain and fabrics in a simulated vault environment. All of the tests produced a similar amount of drain water, between 8-11% of the amount of water in the mix, which is expected with the targeted formulation. All of the collected drain waters contained some amount of solids, although the 10 micron filter did not appear to allow any premix materials to pass through. The solids collected from this box are believed to consist of calcium carbonate based on one ICP-AES measurement. Any of the four candidate fabrics would be an improvement over the sheet drain alone relative to solids removal. The 10 micron fabric is the only candidate that stopped all premix material from passing. The 10 micron fabric will also cause the largest decrease in flux. This decrease in flux was not enough to inhibit the total amount of drain water removed, but may lead to increased time to remove standing water prior to subsequent pours in the facility. The acceptability of reduced liquid flux through the 10 micron fabric will depend on the amount of excess water to be removed, the time available for water removal and the total area of fabric installed at the disposal cell.« less

95 MeV oxygen ion irradiation effects on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ke, S. C.; Siddappa, K.

2003-09-01

The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions, in the fluence range of 5 x 10(10) to 5 x 10(13) ions/cm(2). The influence of ion irradiation on threshold voltage (V-TH), linear drain current (I-DLin), leakage current (I-L), drain conductance (g(D)), transconductance (g(m)), mobility (mu) and drain saturation current (I-DSat) of MOSFETs was studied systematically for various fluence. The V-TH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (N-it) and oxide trapped charge (N-ot) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (DeltaN(it)) charge in irradiated MOSFETs were found to he higher than those of the interface trapped charge (DeltaN(ot)). The I-DLin and I-Dsat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on g(m), g(D) and mu show a degradation varying front 70 to 75% after irradiation. The mobility degradation coefficients for N-it(alpha(it)) and N-ot(alpha(it)) were estimated. The results of these studies are presented and discussed.

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Integrated, Continuous Emulsion Creamer.

PubMed

Cochrane, Wesley G; Hackler, Amber L; Cavett, Valerie J; Price, Alexander K; Paegel, Brian M

2017-12-19

Automated and reproducible sample handling is a key requirement for high-throughput compound screening and currently demands heavy reliance on expensive robotics in screening centers. Integrated droplet microfluidic screening processors are poised to replace robotic automation by miniaturizing biochemical reactions to the droplet scale. These processors must generate, incubate, and sort droplets for continuous droplet screening, passively handling millions of droplets with complete uniformity, especially during the key step of sample incubation. Here, we disclose an integrated microfluidic emulsion creamer that packs ("creams") assay droplets by draining away excess oil through microfabricated drain channels. The drained oil coflows with creamed emulsion and then reintroduces the oil to disperse the droplets at the circuit terminus for analysis. Creamed emulsion assay incubation time dispersion was 1.7%, 3-fold less than other reported incubators. The integrated, continuous emulsion creamer (ICEcreamer) was used to miniaturize and optimize measurements of various enzymatic activities (phosphodiesterase, kinase, bacterial translation) under multiple- and single-turnover conditions. Combining the ICEcreamer with current integrated microfluidic DNA-encoded library bead processors eliminates potentially cumbersome instrumentation engineering challenges and is compatible with assays of diverse target class activities commonly investigated in drug discovery.

Fabrication and Characteristics of Pentacene/Vanadium Pentoxide Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minagawa, M.; Nakai, K.; Baba, A.

2011-12-23

Organic field-effect transistors (OFETs) were fabricated using pentacene thin layer, and the effects of inserted Lewis-acid thin layers on electrical properties were investigated. The OFETs have active layers of pentacene and vanadium pentoxide (V{sub 2}O{sub 5}) as a Lewis-acid layer. Typical source-drain current (I{sub DS}) vs. source-drain voltage (V{sub DS}) curves were observed under negative gate voltages (V{sub G}S) application, and the shift of the threshold voltage for FET driving (V{sub t}) to positive side was also observed by V{sub 2}O{sub 5} layer insertion, that is, -2.5 V for device with V{sub 2}O{sub 5} layer and -5.7 V for devicemore » without V{sub 2}O{sub 5} layer. It was thought that charge transfer (CT) complexes which were formed at the interface between pentacene and V{sub 2}O{sub 5} layer were dissociated by the applied gate voltage, and the generated holes seem to contribute to drain current and the apparent V{sub t} improvement.« less

Managing Artificially Drained Low-Gradient Agricultural Headwaters for Enhanced Ecosystem Functions

PubMed Central

Pierce, Samuel C.; Kröger, Robert; Pezeshki, Reza

2012-01-01

Large tracts of lowlands have been drained to expand extensive agriculture into areas that were historically categorized as wasteland. This expansion in agriculture necessarily coincided with changes in ecosystem structure, biodiversity, and nutrient cycling. These changes have impacted not only the landscapes in which they occurred, but also larger water bodies receiving runoff from drained land. New approaches must append current efforts toward land conservation and restoration, as the continuing impacts to receiving waters is an issue of major environmental concern. One of these approaches is agricultural drainage management. This article reviews how this approach differs from traditional conservation efforts, the specific practices of drainage management and the current state of knowledge on the ecology of drainage ditches. A bottom-up approach is utilized, examining the effects of stochastic hydrology and anthropogenic disturbance on primary production and diversity of primary producers, with special regard given to how management can affect establishment of macrophytes and how macrophytes in agricultural landscapes alter their environment in ways that can serve to mitigate non-point source pollution and promote biodiversity in receiving waters. PMID:24832519

Modeling of Dual Gate Material Hetero-dielectric Strained PNPN TFET for Improved ON Current

NASA Astrophysics Data System (ADS)

Kumari, Tripty; Saha, Priyanka; Dash, Dinesh Kumar; Sarkar, Subir Kumar

2018-01-01

The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply voltage. However, the main challenging issue associated with realizing TFET for wide scale applications is its low ON current. To overcome this, a dual gate material with the concept of dielectric engineering has been incorporated into conventional TFET structure to tune the tunneling width at source-channel interface allowing significant flow of carriers. In addition to this, N+ pocket is implanted at source-channel junction of the proposed structure and the effect of strain is added for exploring the performance of the model in nanoscale regime. All these added features upgrade the device characteristics leading to higher ON current, low leakage and low threshold voltage. The present work derives the surface potential, electric field expression and drain current by solving 2D Poisson's equation at different boundary conditions. A comparative analysis of proposed model with conventional TFET has been done to establish the superiority of the proposed structure. All analytical results have been compared with the results obtained in SILVACO ATLAS device simulator to establish the accuracy of the derived analytical model.

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Campabadal, F.

2001-08-01

The hot-carrier degradation of lightly doped drain (LDD) and large angle tilt implanted drain (LATID) nMOSFETs of a 0.35 μm CMOS technology is analysed and compared by means of I-V characterisation and charge pumping current measurements. LATID nMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity at maximum substrate current condition. The different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. Further to this analysis, the hot-carrier degradation comparison between LDD and LATID devices is extended to the whole range of gate-stress regimes and the effects of short electron injection (SEI) and short hole injection (SHI) phases on hot-carrier-stressed devices are analysed. Apart from a significant improved resistance to hot-carrier effects registered for LATID devices, a similar behaviour is observed for the two types of architectures. In this way, SEI phases are found to be an efficient tool for revealing part of the damage generated in stresses at low gate voltages, whereas the performance of a first SHI phase after stress at high gate bias is found to result in a significant additional degradation of the devices. This enhanced degradation is attributed to a sudden interface states build-up occurring in both, LDD and LATID devices, near the Si/spacer interface only under the first hot-hole injection condition.

Environmental Impact Analysis Process. Environmental Impact Statement for the Closure of Pease Air Force Base. Volume 1

DTIC Science & Technology

1990-05-01

initially known as Portsmouth AFB. In 1957, it was rededicated as Pease AFB in honor of Captain Harl Pease, Jr., a native of Plymouth , Now Hampshire. During... barren soil, up-gradient from storm drains, or in close proximity of floor drains. Corrective action currently being taken is the prompt disposal of...Plant communities on base are indicative of the pine / northern hardwood ecosystem.. The forest resources of. Pease AFB are substantial. More than one

Switches from pi- to sigma-bonding complexes controlled by gate voltages.

PubMed

Matsui, Eriko; Harnack, Oliver; Matsuzawa, Nobuyuki N; Yasuda, Akio

2005-10-01

A conjugated polymer/metal ion/liquid-crystal molecular system was set between source and drain electrodes with a 100 nm gap. When gate voltage (Vg) increases, the current between source and drain electrodes increases. Infrared spectra show this system to be composed of pi and sigma complexes. At Vg = 0, the pi complex dominates the sigma complex, whereas the sigma complex becomes dominant when Vg is switched on. Calculations found that the pi complex has lower conductivity than the sigma complex.

Suspended sediment yield of New Jersey coastal plain streams draining into the Delaware estuary

USGS Publications Warehouse

Mansue, Lawrence J.

1972-01-01

The purpose of this report is to summarize sediment data collected at selected stream-sampling sites in southern New Jersey. Computations of excepted average annual yields at each sampling site were made and utilized to estimate the annual yield at ungaged sites. Similar data currently are being compiled for streams draining Pennsylvania and Delaware. It is planned to report on the combined information at a later date in the Geological Survey's Water-Supply Paper series.

Verifiable metamodels for nitrate losses to drains and groundwater in the corn belt, USA

USDA-ARS?s Scientific Manuscript database

Metamodels (MMs) consisting of artificial neural networks were developed to simplify and upscale mechanistic fate and transport models for prediction of nitrate losses to drains and groundwater in the Corn Belt, USA. The two final MMs predicted nitrate concentration and flux, respectively, in the sh...

Millimeter-Wave Circuit Analysis and Synthesis.

DTIC Science & Technology

1985-05-01

correct within a few percent and the resulting drain-source t.r7njnal current is usually high by approximately 10 percent. -20- Before Eqs. 5 and 9 can...typically used in arialytic FET models and is correct in the limit of long gates.1-3 With this approximation, the voltage drop across the depletion layer...carried out for two ba. c geometrica ss- ft WI sa of arbitrary thickness place-i c;c:.slc,, wi’ta -v .h each sidewall and (2) a thin Yl, s 1 te w~ith

Modeling flow and solute transport at a tile drain field site by explicit representation of preferential flow structures: Equifinality and uncertainty

NASA Astrophysics Data System (ADS)

Zehe, E.; Klaus, J.

2011-12-01

Rapid flow in connected preferential flow paths is crucial for fast transport of water and solutes through soils, especially at tile drained field sites. The present study tests whether an explicit treatment of worm burrows is feasible for modeling water flow, bromide and pesticide transport in structured heterogeneous soils with a 2-dimensional Richards based model. The essence is to represent worm burrows as morphologically connected paths of low flow resistance and low retention capacity in the spatially highly resolved model domain. The underlying extensive database to test this approach was collected during an irrigation experiment, which investigated transport of bromide and the herbicide Isoproturon at a 900 sqm tile drained field site. In a first step we investigated whether the inherent uncertainty in key data causes equifinality i.e. whether there are several spatial model setups that reproduce tile drain event discharge in an acceptable manner. We found a considerable equifinality in the spatial setup of the model, when key parameters such as the area density of worm burrows and the maximum volumetric water flows inside these macropores were varied within the ranges of either our measurement errors or measurements reported in the literature. Thirteen model runs yielded a Nash-Sutcliffe coefficient of more than 0.9. Also, the flow volumes were in good accordance and peak timing errors where less than or equal to 20 min. In the second step we investigated thus whether this "equifinality" in spatial model setups may be reduced when including the bromide tracer data into the model falsification process. We simulated transport of bromide for the 13 spatial model setups, which performed best with respect to reproduce tile drain event discharge, without any further calibration. Four of this 13 model setups allowed to model bromide transport within fixed limits of acceptability. Parameter uncertainty and equifinality could thus be reduced. Thirdly, we selected one of those four setups for simulating transport of Isoproturon, which was applied the day before the irrigation experiment, and tested different parameter combinations to characterise adsorption according to the footprint data base. Simulations could, however, only reproduce the observed event based leaching behaviour, when we allowed for retardation coefficients that were very close to one. This finding is consistent with observations various field observations. We conclude: a) A realistic representation of dominating structures and their topology is of key importance for predicting preferential water and mass flows at tile drained hillslopes. b) Parameter uncertainty and equifinality could be reduced, but a system inherent equifinality in a 2-dimensional Richards based model has to be accepted.

Test of a simplified modeling approach for nitrogen transfer in agricultural subsurface-drained catchments

NASA Astrophysics Data System (ADS)

Henine, Hocine; Julien, Tournebize; Jaan, Pärn; Ülo, Mander

2017-04-01

In agricultural areas, nitrogen (N) pollution load to surface waters depends on land use, agricultural practices, harvested N output, as well as the hydrology and climate of the catchment. Most of N transfer models need to use large complex data sets, which are generally difficult to collect at larger scale (>km2). The main objective of this study is to carry out a hydrological and a geochemistry modeling by using a simplified data set (land use/crop, fertilizer input, N losses from plots). The modelling approach was tested in the subsurface-drained Orgeval catchment (Paris Basin, France) based on following assumptions: Subsurface tile drains are considered as a giant lysimeter system. N concentration in drain outlets is representative for agricultural practices upstream. Analysis of observed N load (90% of total N) shows 62% of export during the winter. We considered prewinter nitrate (NO3) pool (PWNP) in soils at the beginning of hydrological drainage season as a driving factor for N losses. PWNP results from the part of NO3 not used by crops or the mineralization part of organic matter during the preceding summer and autumn. Considering these assumptions, we used PWNP as simplified input data for the modelling of N transport. Thus, NO3 losses are mainly influenced by the denitrification capacity of soils and stream water. The well-known HYPE model was used to perform water and N losses modelling. The hydrological simulation was calibrated with the observation data at different sub-catchments. We performed a hydrograph separation validated on the thermal and isotopic tracer studies and the general knowledge of the behavior of Orgeval catchment. Our results show a good correlation between the model and the observations (a Nash-Sutcliffe coefficient of 0.75 for water discharge and 0.7 for N flux). Likewise, comparison of calibrated PWNP values with the results from a field survey (annual PWNP campaign) showed significant positive correlation. One can conclude that the simplified modeling approach using PWNP as a driving factor for the evaluation of N losses from drained agricultural catchments gave satisfactory results and we can propose this approach for a wider use.

High work function materials for source/drain contacts in printed polymer thin film transistors

NASA Astrophysics Data System (ADS)

Sholin, V.; Carter, S. A.; Street, R. A.; Arias, A. C.

2008-02-01

Studies of materials for source-drain electrodes in ink-jet printed polymer-based thin film transistors (TFTs) are reported. Two systems are studied: a blend of Ag nanoparticles with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) and an ethylene glycol-doped PEDOT:PSS solution (modified-PEDOT). The semiconductor used is the polythiophene derivative poly [5,5'-bis(3-dodecyl-2-thienyl)-2,2,2'-bithiophene]. PEDOT:Ag blends and modified-PEDOT yield TFTs with mobilities around 10-2 and 10-3cm2/Vs, respectively, subthreshold slopes around 1.6V/decade and on-to-off current ratios of 106-107. Both systems show considerable improvement over printed TFTs with Ag nanoparticle source-drain electrodes. Results on film resistivity and morphology are discussed along with device characteristic analysis.

The nitrate response of a lowland catchment and groundwater travel times

NASA Astrophysics Data System (ADS)

van der Velde, Ype; Rozemeijer, Joachim; de Rooij, Gerrit; van Geer, Frans

2010-05-01

Intensive agriculture in lowland catchments causes eutrophication of downstream waters. To determine effective measures to reduce the nutrient loads from upstream lowland catchments, we need to understand the origin of long-term and daily variations in surface water nutrient concentrations. Surface water concentrations are often linked to travel time distributions of water passing through the saturated and unsaturated soil of the contributing catchment. This distribution represents the contact time over which sorption, desorption and degradation takes place. However, travel time distributions are strongly influenced by processes like tube drain flow, overland flow and the dynamics of draining ditches and streams and therefore exhibit strong daily and seasonal variations. The study we will present is situated in the 6.6 km2 Hupsel brook catchment in The Netherlands. In this catchment nitrate and chloride concentrations have been intensively monitored for the past 26 years under steadily decreasing agricultural inputs. We described the complicated dynamics of subsurface water fluxes as streams, ditches and tube drains locally switch between active or passive depending on the ambient groundwater level by a groundwater model with high spatial and temporal resolutions. A transient particle tracking approach is used to derive a unique catchment-scale travel time distribution for each day during the 26 year model period. These transient travel time distributions are not smooth distributions, but distributions that are strongly spiked reflecting the contribution of past rainfall events to the current discharge. We will show that a catchment-scale mass response function approach that only describes catchment-scale mixing and degradation suffices to accurately reproduce observed chloride and nitrate surface water concentrations as long as the mass response functions include the dynamics of travel time distributions caused by the highly variable connectivity of the surface water network.

Climate mitigation scenarios of drained peat soils

NASA Astrophysics Data System (ADS)

Kasimir Klemedtsson, Åsa; Coria, Jessica; He, Hongxing; Liu, Xiangping; Nordén, Anna

2014-05-01

The national inventory reports (NIR) submitted to the UNFCCC show Sweden - which as many other countries has wetlands where parts have been drained for agriculture and forestry purposes, - to annually emit 12 million tonnes carbon dioxide equivalents, which is more GHG'es than industrial energy use release in Sweden. Similar conditions can be found in other northern countries, having cool and wet conditions, naturally promoting peat accumulation, and where land use management over the last centuries have promoted draining activities. These drained peatland, though covering only 2% of the land area, have emissions corresponding to 20% of the total reported NIR emissions. This substantial emission contribution, however, is hidden within the Land Use Land Use Change and Forestry sector (LULUCF) where the forest Carbon uptake is even larger, which causes the peat soil emissions become invisible. The only drained soil emission accounted in the Swedish Kyoto reporting is the N2O emission from agricultural drained organic soils of the size 0.5 million tonnes CO2e yr-1. This lack of visibility has made incentives for land use change and management neither implemented nor suggested, however with large potential. Rewetting has the potential to decrease soil mineralization, why CO2 and N2O emissions are mitigated. However if the soil becomes very wet CH4 emission will increase together with hampered plant growth. By ecological modeling, using the CoupModel the climate change mitigation potential have been estimated for four different land use scenarios; 1, Drained peat soil with Spruce (business as usual scenario), 2, raised ground water level to 20 cm depth and Willow plantation, 3, raised ground water level to 10 cm depth and Reed Canary Grass, and 4, rewetting to an average water level in the soil surface with recolonizing wetland plants and mosses. We calculate the volume of biomass production per year, peat decomposition, N2O emission together with nitrate and DOC/POC leakage. Based on the modelling results a cost benefit analysis is performed (economics), guiding to the design of environmental policies needed for land use change to come true.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

NASA Astrophysics Data System (ADS)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing BTBT leakage. With further replacement of raised InGaAs spacers by recessed, doping-graded InP spacers at high field regions, BTBT leakage can be reduced ~100:1. Using the above-mentioned techniques, record high performance InAs MOSFETs with a 2.7 nm InAs channel and a ZrO2 gate dielectric were demonstrated with Ion = 500 microA/microm at Ioff = 100 nA/microm and VDS =0.5 V, showing the highest on-state performance among all the III-V MOSFETs and comparable performance to 22 nm Si FinFETs. Record low leakage InGaAs MOSFETs with recessed InP source/drain spacers were also demonstrated with minimum I off = 60 pA/microm at 30 nm-Lg , and Ion = 150 microA/microm at I off = 1 nA/microm and VDS =0.5 V. This recessed InP source/drain spacer technique improves device scalability and enables III-V MOSFETs for low standby power logic applications. Furthermore, ultra-thin InAs channel MOSFETs were fabricated on Si substrates, exhibiting high yield and high transconductance gm ~2.0 mS/microm at 20 nm- Lg and VDS =0.5 V. With further scaling of gate lengths, a 12 nm-Lg III-V MOSFET has shown maximum Ion/Ioff ratio ~8.3x105 , confirming that III-V MOSFETs are scalable to sub-10-nm technology nodes.

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Ghaffari, Majid

2015-11-01

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

2016-07-01

Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

Regional flow in a complex coastal aquifer system: Combining voxel geological modelling with regularized calibration

NASA Astrophysics Data System (ADS)

Meyer, Rena; Engesgaard, Peter; Høyer, Anne-Sophie; Jørgensen, Flemming; Vignoli, Giulio; Sonnenborg, Torben O.

2018-07-01

Low-lying coastal regions are often highly populated, constitute sensitive habitats and are at the same time exposed to challenging hydrological environments due to surface flooding from storm events and saltwater intrusion, which both may affect drinking water supply from shallow and deeper aquifers. Near the Wadden Sea at the border of Southern Denmark and Northern Germany, the hydraulic system (connecting groundwater, river water, and the sea) was altered over centuries (until the 19th century) by e.g. the construction of dikes and drains to prevent flooding and allow agricultural use. Today, massive saltwater intrusions extend up to 20 km inland. In order to understand the regional flow, a methodological approach was developed that combined: (1) a highly-resolved voxel geological model, (2) a ∼1 million node groundwater model with 46 hydrofacies coupled to rivers, drains and the sea, (3) Tikhonov regularization calibration using hydraulic heads and average stream discharges as targets and (4) parameter uncertainty analysis. It is relatively new to use voxel models for constructing geological models that often have been simplified to stacked, pseudo-3D layer geology. The study is therefore one of the first to combine a voxel geological model with state-of-the-art flow calibration techniques. The results show that voxel geological modelling, where lithofacies information are transferred to each volumetric element, is a useful method to preserve 3D geological heterogeneity on a local scale, which is important when distinct geological features such as buried valleys are abundant. Furthermore, it is demonstrated that simpler geological models and simpler calibration methods do not perform as well. The proposed approach is applicable to many other systems, because it combines advanced and flexible geological modelling and flow calibration techniques. This has led to new insights in the regional flow patterns and especially about water cycling in the marsh area near the coast based on the ability to define six predictive scenarios from the linear analysis of parameter uncertainty. The results show that the coastal system near the Danish-German border is mainly controlled by flow in the two aquifers separated by a thick clay layer, and several deep high-permeable buried valleys that connect the sea with the interior and the two aquifers. The drained marsh area acts like a huge regional sink limiting submarine groundwater discharge. With respect to water balance, the greatest sensitivity to parameter uncertainty was observed in the drained marsh area, where some scenarios showed increased flow of sea water into the interior and increased drainage. We speculate that the massive salt water intrusion may be caused by a combination of the preferential pathways provided by the buried valleys, the marsh drainage and relatively high hydraulic conductivities in the two main aquifers as described by one of the scenarios. This is currently under investigation by using a salt water transport model.

Sulfur as a surface passivation for InP

NASA Technical Reports Server (NTRS)

Iyer, R.; Chang, R. R.; Lile, D. L.

1988-01-01

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

PubMed Central

2012-01-01

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. PMID:22901374

Design and simulation of a novel 1400 V-4000 V enhancement mode buried gate GaN HEMT for power applications

NASA Astrophysics Data System (ADS)

Faramehr, Soroush; Kalna, Karol; Igić, Petar

2014-11-01

A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V-4000 V for a source-to-drain spacing (LSD) of 6 μm-32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance RS for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm2 and 3.5 mΩ · cm2, respectively. Further improvement up to BV = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of RS = 35.5 mΩ · cm2. The leakage current in the proposed devices stays in the range of ˜5 × 10-9 mA mm-1.

Hydraulic characteristics of an underdrained irrigation circle, Muskegon County, wastewater disposal system, Michigan

USGS Publications Warehouse

McDonald, M.G.

1981-01-01

Muskegon County, Michigan, disposes of waste water by spray irrigating farmland on its waste-disposal site. Buried drains in the highly permeable unconfined aquifer at the site control the level of the water table. Hydraulic conductivity of the aquifer and drain-leakance, the reciprocal of resistance to flow into the drains, was determined at a representative irrigation circle while calibrating a model of the ground-water flow system. Hydraulic conductivity is 0.00055 meter per second in the north zone of the circle and 0.00039 meter per second in the south zone. Drain leakance is low in both zones: 2.9 x 10-6 meters per second in the north and 9.5 x 10-6 meters per second in the south. Low drain leakance is responsible for waterlogging when irrigation rates are maintained at design levels. The capacity of the study circle to accept waste water is 35 percent less than design capacity.

Features predictive of brain arteriovenous malformation hemorrhage: extrapolation to a physiologic model.

PubMed

Sahlein, Daniel H; Mora, Paloma; Becske, Tibor; Huang, Paul; Jafar, Jafar J; Connolly, E Sander; Nelson, Peter K

2014-07-01

Although there is generally thought to be a 2% to 4% per annum rupture risk for brain arteriovenous malformations (bAVMs), there is no way to estimate risk for an individual patient. In this retrospective study, patients were eligible who had nidiform bAVMs and underwent detailed pretreatment diagnostic cerebral angiography at our medical center from 1996 to 2006. All patients had superselective microcatheter angiography, and films were reviewed for the purpose of this project. Patient demographics, clinical presentation, and angioarchitectural characteristics were analyzed. A univariate analysis was performed, and angioarchitectural features with potential physiological significance that showed at least a trend toward significance were added to a multivariate logistic regression model. One hundred twenty-two bAVMs met criteria for study entry. bAVMs with single venous drainage anatomy were more likely to present with hemorrhage. In addition, patients with multiple draining veins and a venous stenosis reverted to a risk similar to those with 1 draining vein, whereas those with multiple draining veins and without stenosis had diminished association with hemorrhage presentation. Those bAVMs with associated aneurysms were more likely to present with hemorrhage. These findings were robust in both univariate and multivariate models. The results of this article lead to the first physiological, internally consistent model of individual bAVM hemorrhage risk, where 1 draining vein, venous stenosis, and associated aneurysms increase risk. © 2014 American Heart Association, Inc.

Wavelength dependence and multiple-induced states in photoresponses of copper phthalocyanine-doped gold nanoparticle single-electron device

NASA Astrophysics Data System (ADS)

Yamamoto, Makoto; Ueda, Rieko; Terui, Toshifumi; Imazu, Keisuke; Tamada, Kaoru; Sakano, Takeshi; Matsuda, Kenji; Ishii, Hisao; Noguchi, Yutaka

2014-01-01

We have proposed a gold nanoparticle (GNP)-based single-electron transistor (SET) doped with a dye molecule, where the molecule works as a photoresponsive floating gate. Here, we examined the source-drain current (I_{\\text{SD}}) at a constant drain voltage under light irradiation with various wavelengths ranging from 400 to 700 nm. Current change was enhanced at the wavelengths of 600 and 700 nm, corresponding to the optical absorption band of the doped molecule (copper phthalocyanine: CuPc). Moreover, several peaks appear in the histograms of I_{\\text{SD}} during light irradiation, indicating that multiple discrete states were induced in the device. The results suggest that the current change was initiated by the light absorption of CuPc and multiple CuPc molecules near the GNP working as a floating gate. Molecular doping can activate advanced device functions in GNP-based SETs.

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

2003-10-01

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (˜0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (˜0.6 A/mm and ˜5%). The Sc 2O 3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ˜5% to 12%) on the surface passivated HEMTs, showing that Sc 2O 3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Sensitivity analysis of the agricultural policy/environmental extender (APEX) for phosphorus loads in tile-drained landscapes

USDA-ARS?s Scientific Manuscript database

Numerical modeling is an economical and feasible approach for quantifying the effects of best management practices on phosphorus (P) loadings from agricultural fields. However, tools that simulate both surface and subsurface P pathways are limited and have not been robustly evaluated in tile-drained...

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

NASA Astrophysics Data System (ADS)

Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

2016-04-01

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

On current transients in MoS2 Field Effect Transistors.

PubMed

Macucci, Massimo; Tambellini, Gerry; Ovchinnikov, Dmitry; Kis, Andras; Iannaccone, Giuseppe; Fiori, Gianluca

2017-09-14

We present an experimental investigation of slow transients in the gate and drain currents of MoS 2 -based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude that there are at least two independent trapping mechanisms: trapping of charges in the silicon oxide substrate, occurring with time constants of the order of tens of seconds and involving charge motion orthogonal to the MoS 2 sheet, and trapping at the channel surface, which occurs with much longer time constants, in particular when the device is in a vacuum. We observe that the presence of such slow phenomena makes it very difficult to perform reliable low-frequency noise measurements, requiring a stable and repeatable steady-state bias point condition, and may explain the sometimes contradictory results that can be found in the literature about the dependence of the flicker noise power spectral density on gate bias.

Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration.

PubMed

Hayakawa, Ryoma; Chikyow, Toyohiro; Wakayama, Yutaka

2017-08-10

Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C 60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Shallow Groundwater Discharge into Urban Drains: Identifying the Missing Link to Define Urban Typologies for Impact Assessment of Urbanization on Water and Nutrient Balances

NASA Astrophysics Data System (ADS)

Ocampo, C. J.; Oldham, C. E.

2015-12-01

Groundwater and surface water (GW-SW) interaction in drains of many sandy coastal plain areas displays an ephemeral hydrological regime, as often shifts occur in their hydraulic functioning from a losing to a gaining water conditions upon the position of the surrounding shallow water table (SWT). Urbanization in such areas and stormwater management strategies enhancing infiltration have the potential to alter the infiltration rates and the subsurface water storage dynamics with consequences for the residence time of the water and nutrient transformations prior their discharge into receiving SW drains. Identifying first order control on the above processes will assist the improvement of assessment tools for better urban development. This work presents findings on the hydrodynamics of the GW-SW water exchange in two drains of the Perth Coastal Plain area (Western Australia, Australia) impacted by a SWT developing on a layered variable texture soil: a peri-urban drain and a restored living stream drain in urban residential area. A multi-technique approach was used to investigate water mass balance and fluxes over a reach scale and involved continuous records of hydrometric data for GW-SW interactions, passive tracers for water pathway identification, pore water temperature for vertical water exchange, and differential SW discharge using an Acoustic Doppler Current Profiler. Results highlighted differences in the GW-SW interactions between both drains under stormflow and baseflow conditions. A substantial increase of GW discharge into the drain coincided with the full development of a SWT over a seasonal scale at the peri-urban drain, which suggests a more natural water infiltration and redistribution in the subsurface. In contrast, a large volume of infiltrated rain water was discharged into the living stream over a period of few weeks regardless of the development of the surrounding SWT, which suggests the influence of underground pipe system in water redistribution. The results contributed to identify key physical parameters to define urban typologies, quantify the subsurface storage discharge and residence time, and finally assess the transport and transformations of nutrients using a generalised Damköhler number. Future work will populate the framework with other study cases.

Amylase in drain fluid for the diagnosis of pancreatic leak in post-pancreatic resection.

PubMed

Davidson, Tsetsegdemberel Bat-Ulzii; Yaghoobi, Mohammad; Davidson, Brian R; Gurusamy, Kurinchi Selvan

2017-04-07

The treatment of people with clinically significant postoperative pancreatic leaks is different from those without clinically significant pancreatic leaks. It is important to know the diagnostic accuracy of drain fluid amylase as a triage test for the detection of clinically significant pancreatic leaks, so that an informed decision can be made as to whether the patient with a suspected pancreatic leak needs further investigations and treatment. There is currently no systematic review of the diagnostic test accuracy of drain fluid amylase for the diagnosis of clinically relevant pancreatic leak. To determine the diagnostic accuracy of amylase in drain fluid at 48 hours or more for the diagnosis of pancreatic leak in people who had undergone pancreatic resection. We searched MEDLINE, Embase, the Science Citation Index Expanded, and the National Institute for Health Research Health Technology Assessment (NIHR HTA) websites up to 20 February 2017. We searched the references of the included studies to identify additional studies. We did not restrict studies based on language or publication status, or whether data were collected prospectively or retrospectively. We also performed a 'related search' and 'citing reference' search in MEDLINE and Embase. We included all studies that evaluated the diagnostic test accuracy of amylase in the drain fluid at 48 hours or more for the diagnosis of pancreatic leak in people who had undergone pancreatic resection excluding total pancreatectomy. We planned to exclude case-control studies because these studies are prone to bias, but did not find any. At least two authors independently searched and screened the references produced by the search to identify relevant studies. Two review authors independently extracted data from the included studies. The included studies reported drain fluid amylase on different postoperative days and measured at different cut-off levels, so it was not possible to perform a meta-analysis using the bivariate model as planned. We have reported the sensitivity, specificity, post-test probability of a positive and negative drain fluid amylase along with 95% confidence interval (CI) on each of the different postoperative days and measured at different cut-off levels. A total of five studies including 868 participants met the inclusion criteria for this review. The five studies included in this review reported the value of drain fluid amylase at different thresholds and different postoperative days. The sensitivities and specificities were variable; the sensitivities ranged between 0.72 and 1.00 while the specificities ranged between 0.73 and 0.99 for different thresholds on different postoperative days. At the median prevalence (pre-test probability) of 15.9%, the post-test probabilities for pancreatic leak ranged between 35.9% and 95.4% for a positive drain fluid amylase test and ranged between 0% and 5.5% for a negative drain fluid amylase test.None of the studies used the reference standard of confirmation by surgery or by a combination of surgery and clinical follow-up, but used the International Study Group on Pancreatic Fistula (ISGPF) grade B and C as the reference standard. The overall methodological quality was unclear or high in all the studies. Because of the paucity of data and methodological deficiencies in the studies, we are uncertain whether drain fluid amylase should be used as a method for testing for pancreatic leak in an unselected population after pancreatic resection; and we judge that the optimal cut-off of drain fluid amylase for making the diagnosis of pancreatic leak is also not clear. Further well-designed diagnostic test accuracy studies with pre-specified index test threshold of drain fluid amylase (at three times more on postoperative day 5 or another suitable pre-specified threshold), appropriate follow-up (for at least six to eight weeks to ensure that there are no pancreatic leaks), and clearly defined reference standards (of surgical, clinical, and radiological confirmation of pancreatic leak) are important to reliably determine the diagnostic accuracy of drain fluid amylase in the diagnosis of pancreatic leak.

Modeling of I-V characteristics in a 3-channel SFFT with nanobridges by gate current signals

NASA Astrophysics Data System (ADS)

Yu, Byunggyu; Kim, Young-Pil; Ko, Seok-Cheol

2018-04-01

A superconducting flux flow transistor (SFFT) with three channels and nanobridges was successfully fabricated by electron beam (e-beam) lithography and an Ar ion milling technique. The SFFT is composed of three weak links with a nearby gate current line. We explain the process to obtain the equation for the current-voltage characteristics and describe the method to induce external and internal magnetic fields by Biot-Savart's law. The equation can be used to predict the current-voltage curves for the 3-channel SFFT fabricated using e-beam lithography. I-V characteristics were simulated to analyze the SFFT with three channels and nanobridges by a Matlab program. From the I-V characteristics equation of the 3-channel SFFT, the drain currents and the output voltages as the gate current is applied are graphically compared with the measured value and the simulation value. The simulated I-V curves were in good agreement with the measured curves of the 3-channel SFFT with nanobridges.

Controlling attachment and growth of Listeria monocytogenes in polyvinyl chloride model floor drains using a peroxide chemical, chitosan-arginine, or heat.

PubMed

Berrang, Mark E; Hofacre, Charles L; Frank, Joseph F

2014-12-01

Listeria monocytogenes can colonize a poultry processing plant as a resident in floor drains. Limiting growth and attachment to drain surfaces may help lessen the potential for cross-contamination of product. The objective of this study was to compare a hydrogen peroxide-peroxyacetic acid-based chemical to chitosan-arginine or heat to prevent attachment of or destroy existing L. monocytogenes on the inner surface of model floor drains. L. monocytogenes was introduced to result in about 10(9) planktonic and attached cells within untreated polyvinyl chloride model drain pipes. Treatments (0.13 % peroxide-based sanitizer, 0.1 % chitosan-arginine, or 15 s of hot water at 95 to 100°C) were applied immediately after inoculation or after 24 h of incubation. Following treatment, all pipes were incubated for an additional 24 h; planktonic and attached cells were enumerated by plate count. All treatments significantly (P < 0.05) lowered numbers of planktonic and attached cells recovered. Chitosan-arginine resulted in approximately a 6-log reduction in planktonic cells when applied prior to incubation and a 3-log reduction after the inoculum had a chance to grow. Both heat and peroxide significantly outperformed chitosan-arginine (8- to 9-log reduction) and were equally effective before and after incubation. Heat was the only treatment that eliminated planktonic L. monocytogenes. All treatments were less effective against attached cells. Chitosan-arginine provided about a 4.5-log decrease in attached cells when applied before incubation and no significant decrease when applied after growth. Like with planktonic cells, peroxide-peroxyacetic acid and heat were equally effective before or after incubation, causing decreases ranging from 7 to 8.5 log for attached L. monocytogenes. Applied at the most efficacious time, any of these techniques may lessen the potential for L. monocytogenes to remain as a long-term resident in processing plant floor drains.

DC and analog/RF performance optimisation of source pocket dual work function TFET

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Sharma, Dheeraj; Kondekar, Pravin; Nigam, Kaushal; Baronia, Sagar

2017-12-01

We investigate a systematic study of source pocket tunnel field-effect transistor (SP TFET) with dual work function of single gate material by using uniform and Gaussian doping profile in the drain region for ultra-low power high frequency high speed applications. For this, a n+ doped region is created near the source/channel junction to decrease the depletion width results in improvement of ON-state current. However, the dual work function of the double gate is used for enhancement of the device performance in terms of DC and analog/RF parameters. Further, to improve the high frequency performance of the device, Gaussian doping profile is considered in the drain region with different characteristic lengths which decreases the gate to drain capacitance and leads to drastic improvement in analog/RF figures of merit. Furthermore, the optimisation is performed with different concentrations for uniform and Gaussian drain doping profile and for various sectional length of lower work function of the gate electrode. Finally, the effect of temperature variation on the device performance is demonstrated.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, James D.

1997-01-01

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, J.D.

1997-09-02

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

Simulation of ground-water flow near the nuclear-fuel reprocessing facility at the Western New York Nuclear Service Center, Cattaraugus County, New York

USGS Publications Warehouse

Yager, R.M.

1987-01-01

A two-dimensional finite-difference model was developed to simulate groundwater flow in a surficial sand and gravel deposit underlying the nuclear fuel reprocessing facility at Western New York Nuclear Service Center near West Valley, N.Y. The sand and gravel deposit overlies a till plateau that abuts an upland area of siltstone and shale on its west side, and is bounded on the other three sides by deeply incised stream channels that drain to Buttermilk Creek, a tributary to Cattaraugus Creek. Radioactive materials are stored within the reprocessing plant and are also buried within a till deposit at the facility. Tritiated water is stored in a lagoon system near the plant and released under permit to Franks Creek, a tributary to Buttermilk Creek. Groundwater levels predicted by steady-state simulations closely matched those measured in 23 observation wells, with an average error of 0.5 meter. Simulated groundwater discharges to two stream channels and a subsurface drain were within 5% of recorded values. Steady-state simulations used an average annual recharge rate of 46 cm/yr; predicted evapotranspiration loss from the ground was 20 cm/yr. The lateral range in hydraulic conductivity obtained through model calibration was 0.6 to 10 m/day. Model simulations indicated that 33% of the groundwater discharged from the sand and gravel unit (2.6 L/sec) is lost by evapotranspiration, 3% (3.0 L/sec) flows to seepage faces at the periphery of the plateau, 20% (1.6 L/sec) discharges to stream channels that drain a large wetland area near the center of the plateau, and the remaining 8% (0.6 L/sec) discharges to a subsurface french drain and to a wastewater treatment system. Groundwater levels computed by a transient-state simulation of an annual climatic cycle, including seasonal variation in recharge and evapotranspiration, closely matched water levels measured in eight observation wells. The model predicted that the subsurface drain and the stream channel that drains the wetland would intercept most of the recharge originating near the reprocessing plant. (Lantz-PTT)

Municipal solid waste management in Lahore City District, Pakistan

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batool, Syeda Adila; Muhammad Nawaz Ch

2009-06-15

This study deals with generation, composition, collection, transportation, and disposal, as well as the present cost of the waste management on the basis of 60% collection of the total waste and the cost of proposed improved system of management on the basis of 100% waste collection using the IWM-2 LCI model. A GIS map of Data Ganj Bakhsh Town (DGBT) of Lahore City District showing communal storage facilities is also provided. DGBT has a population of 1,624,169 living in 232,024 dwellings. The total waste generated per year is 500,000 tons, or 0.84/kg/cap/day. Presently 60% of the MSW is collected andmore » disposed in open dumps, while 40% is not collected and lies along roadsides, streets railway lines, depressions, vacant plots, drains, storm drains and open sewers. In DGBT, 129 containers of 5-m{sup 3} capacity, 120 containers of 10-m{sup 3} capacity and 380 skips of 2.5-m{sup 3} capacity are placed for waste collection. The overall collection and disposal cost of the MSW of DGBT is $3,177,900/yr, which is $10.29/ton. Modeling was conducted using the IWM-2 model for improved collection and disposal on the basis of 100% service, compared to the current 60% service. The modelled cost is $8.3/per ton, which is 20% less than the present cost, but the overall cost of 100% collection and disposal increases to $4,155,737/yr.« less

Efficacy of tranexamic acid plus drain-clamping to reduce blood loss in total knee arthroplasty: A meta-analysis.

PubMed

Zhang, Yan; Zhang, Jun-Wei; Wang, Bao-Hua

2017-06-01

Perioperative blood loss is still an unsolved problem in total knee arthroplasty (TKA). The efficacy of the preoperative use of tranexamic acid (TXA) plus drain-clamping to reduce blood loss in TKA has been debated. This meta-analysis aimed to illustrate the efficacy of TXA plus drain-clamping to reduce blood loss in patients who underwent a TKA. In February 2017, a systematic computer-based search was conducted in PubMed, EMBASE, Web of Science, the Cochrane Database of Systematic Reviews, and Google Scholar. Data from patients prepared for TKA in studies that compared TXA plus drain-clamping versus TXA alone, drain-clamping alone, or controls were retrieved. The primary endpoint was the need for transfusion. The secondary outcomes were total blood loss, blood loss in drainage, the decrease in hemoglobin, and the occurrence of deep venous thrombosis. After testing for publication bias and heterogeneity between studies, data were aggregated for random-effects models when necessary. Ultimately, 5 clinical studies with 618 patients (TXA plus drain-clamping group = 249, control group = 130, TXA-alone group = 60, and drain-clamping group = 179) were included. TXA plus drain-clamping could decrease the need for transfusion, total blood loss, blood loss in drainage, and the decrease in hemoglobin than could the control group, the TXA-alone group, and the drain-clamping group (P < .05). There was no significant difference between the occurrence of deep venous thrombosis between the included groups (P > .05). TXA plus drain-clamping can achieve the maximum effects of hemostasis in patients prepared for primary TKA. Because the number and the quality of the included studies were limited, more high-quality randomized controlled trials are needed to identify the optimal dose of TXA and the clamping hours in patients prepared for TKA.

Nitrate and phosphorus transport through subsurface drains under free and controlled drainage.

PubMed

Saadat, Samaneh; Bowling, Laura; Frankenberger, Jane; Kladivko, Eileen

2018-05-28

Controlled drainage (CD) is a structural conservation practice in which the drainage outlet is managed in order to reduce drain flow volume and nutrient loads to water bodies. The goal of this study was to evaluate the potential of CD to improve water quality for two different seasons and levels of outlet control, using ten years of data collected from an agricultural drained field in eastern Indiana with two sets of paired plots. The Rank Sum test was used to quantify the impact of CD on cumulative annual drain flow and nitrate-N and phosphorus loads. CD plots had a statistically significant (at 5% level) lower annual drain flow (eastern pair: 39%; western pair: 25%) and nitrate load (eastern pair: 43%; western pair: 26%) compared to free draining (FD) plots, while annual soluble reactive phosphorus (SRP) and total phosphorus (TP) loads were not significantly different. An ANCOVA model was used to evaluate the impact of CD on daily drain flow, nitrate-N, SRP and TP concentrations and loads during the two different periods of control. The average percent reduction of daily drain flow was 68% in the eastern pair and 58% in the western pair during controlled drainage at the higher outlet level (winter) and 64% and 58% at the lower outlet level (summer) in the eastern and western pairs, respectively. Nitrate load reduction was similar to drain flow reduction, while the effect of CD on SRP and TP loads was not significant except for the increase in SRP in one pair. These results from a decade-long field monitoring and two different statistical methods enhance our knowledge about water quality impacts of CD system and support this management practice as a reliable system for reducing nitrate loss through subsurface drains, mainly caused by flow reduction. Copyright © 2018 Elsevier Ltd. All rights reserved.

Efficacy of tranexamic acid plus drain-clamping to reduce blood loss in total knee arthroplasty

PubMed Central

Zhang, Yan; Zhang, Jun-Wei; Wang, Bao-Hua

2017-01-01

Abstract Background: Perioperative blood loss is still an unsolved problem in total knee arthroplasty (TKA). The efficacy of the preoperative use of tranexamic acid (TXA) plus drain-clamping to reduce blood loss in TKA has been debated. This meta-analysis aimed to illustrate the efficacy of TXA plus drain-clamping to reduce blood loss in patients who underwent a TKA. Methods: In February 2017, a systematic computer-based search was conducted in PubMed, EMBASE, Web of Science, the Cochrane Database of Systematic Reviews, and Google Scholar. Data from patients prepared for TKA in studies that compared TXA plus drain-clamping versus TXA alone, drain-clamping alone, or controls were retrieved. The primary endpoint was the need for transfusion. The secondary outcomes were total blood loss, blood loss in drainage, the decrease in hemoglobin, and the occurrence of deep venous thrombosis. After testing for publication bias and heterogeneity between studies, data were aggregated for random-effects models when necessary. Results: Ultimately, 5 clinical studies with 618 patients (TXA plus drain-clamping group = 249, control group = 130, TXA-alone group = 60, and drain-clamping group = 179) were included. TXA plus drain-clamping could decrease the need for transfusion, total blood loss, blood loss in drainage, and the decrease in hemoglobin than could the control group, the TXA-alone group, and the drain-clamping group (P < .05). There was no significant difference between the occurrence of deep venous thrombosis between the included groups (P > .05). Conclusions: TXA plus drain-clamping can achieve the maximum effects of hemostasis in patients prepared for primary TKA. Because the number and the quality of the included studies were limited, more high-quality randomized controlled trials are needed to identify the optimal dose of TXA and the clamping hours in patients prepared for TKA. PMID:28658157

Random telegraph signals by alkanethiol-protected Au nanoparticles in chemically assembled single-electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kano, Shinya; CREST, Japan Science and Technology Agency, Yokohama 226-8503; Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE

2013-12-14

We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low as 300 mK. The RTSs in the chemically assembled SET were investigated by measuring the source–drain current, using a histogram of the RTS dwell time, and calculating the power spectrum density of the drain current–time characteristics. It was found that the dwell time of the RTS was dependent on the drain voltage of the SET, but was independent of the gate voltage. Considering the spatial structure of the chemically assembled SET, the origin of the RTS is attributed to the trapped chargesmore » on an alkanethiol-protected Au nanoparticle positioned near the SET. These results are important as they will help to realize stable chemically assembled SETs in practical applications.« less

Conjunctival oedema as a potential objective sign of intracranial hypertension: a short illustrated review and three case reports.

PubMed

Toalster, Nicholas; Jeffree, Rosalind L

2013-11-01

Periorbital and conjunctival oedema has been reported anecdotally by patients with raised intracranial pressure states. We present three clinical cases of this phenomenon and discuss the current evidence for pathways by which cerebrospinal fluid (CSF) drains in relation to conjunctival oedema. We reviewed the available literature using PubMed, in regards to conjunctival oedema as it relates to intracranial hypertension, and present the clinical history, radiology and orbital photographs of three cases we have observed. Only one previous publication has linked raised intracranial pressure (ICP) to conjuctival oedema. The weight of evidence supports the observation that the majority of CSF drains along the cranial nerves as opposed to via the arachnoid projections. Conjunctival oedema may be a clinical manifestation of CSF draining via the optic nerve in elevated ICP states.

A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

NASA Astrophysics Data System (ADS)

Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

NASA Astrophysics Data System (ADS)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

NASA Astrophysics Data System (ADS)

Bauer, Thilo; Jäger, Christof M.; Jordan, Meredith J. T.; Clark, Timothy

2015-07-01

We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.

A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, Thilo; Jäger, Christof M.; Jordan, Meredith J. T.

2015-07-28

We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localizemore » charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.« less

Study of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) transistor including source drain depletion length: Model for sub-threshold behavior

NASA Astrophysics Data System (ADS)

Kumari, Vandana; Kumar, Ayush; Saxena, Manoj; Gupta, Mridula

2018-01-01

The sub-threshold model formulation of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) FET including source/drain depletion length is reported in the present work under the assumption that the ungated regions are fully depleted. To provide deeper insight into the device performance, the impact of gaussian straggle, channel length, oxide and channel thickness and high-k gate dielectric has been studied using extensive TCAD device simulation.

An extensive investigation of work function modulated trapezoidal recessed channel MOSFET

NASA Astrophysics Data System (ADS)

Lenka, Annada Shankar; Mishra, Sikha; Mishra, Satyaranjan; Bhanja, Urmila; Mishra, Guru Prasad

2017-11-01

The concept of silicon on insulator (SOI) and grooved gate help to lessen the short channel effects (SCEs). Again the work function modulation along the metal gate gives a better drain current due to the uniform electric field along the channel. So all these concepts are combined and used in the proposed MOSFET structure for more improved performance. In this work, trapezoidal recessed channel silicon on insulator (TRC-SOI) MOSFET and work function modulated trapezoidal recessed channel silicon on insulator (WFM-TRC-SOI) MOSFET are compared with DC and RF parameters and later linearity of both the devices is tested. An analytical model is formulated by using a 2-D Poisson's equation and develops a compact equation for threshold voltage using minimum surface potential. In this work we analyze the effect of negative junction depth and the corner angle on various device parameters such as minimum surface potential, sub-threshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage. The analysis interprets that the switching performance of WFM-TRC-SOI MOSFET surpasses TRC-SOI MOSFET in terms of high Ion/Ioff ratio and also the proposed structure can minimize the short channel effects (SCEs) in RF application. The validity of proposed model has been verified with simulation result performed on Sentaurus TCAD device simulator.

Nano-Electromechanical Systems: Displacement Detection and the Mechanical Single Electron Shuttle

NASA Astrophysics Data System (ADS)

Blick, R. H.; Beil, F. W.; Höhberger, E.; Erbe, A.; Weiss, C.

For an introduction to nano-electromechanical systems we present measurements on nanomechanical resonators operating in the radio frequency range. We discuss in detail two different schemes of displacement detection for mechanical resonators, namely conventional reflection measurements of a probing signal and direct detection by capacitive coupling via a gate electrode. For capacitive detection we employ an on-chip preamplifier, which enables direct measurements of the resonator's disp lacement. We observe that the mechanical quality factor of the resonator depends on the detection technique applied, which is verified in model calculations and report on the detection of sub-harmonics. In the second part we extend our investigations to include transport of single electrons through an electron island on the tip of a nanomachined mechanical pendulum. The pendulum is operated by applying a modulating electromagnetic field in the range of 1 - 200 MHz, leading to mechanical oscillations between two laterally integrated source and drain contacts. Forming tunneling barriers the metallic tip shuttles single electrons from source to drain. The resulting tunneling current shows distinct features corresponding to the discrete mechanical eigenfrequencies of the pendulum. We report on measurements covering the temperature range from 300 K down to 4.2 K. The transport properties of the device are compared in detail to model calculations based on a Master-equation approach.

A programmable point-of-care device for external CSF drainage and monitoring.

PubMed

Simkins, Jeffrey R; Subbian, Vignesh; Beyette, Fred R

2014-01-01

This paper presents a prototype of a programmable cerebrospinal fluid (CSF) external drainage system that can accurately measure the dispensed fluid volume. It is based on using a miniature spectrophotometer to collect color data to inform drain rate and pressure monitoring. The prototype was machined with 1 μm dimensional accuracy. The current device can reliably monitor the total accumulated fluid volume, the drain rate, the programmed pressure, and the pressure read from the sensor. Device requirements, fabrication processes, and preliminary results with an experimental set-up are also presented.

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

PubMed

Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

2018-01-01

Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

NASA Astrophysics Data System (ADS)

Madan, Jaya; Chaujar, Rishu

2017-02-01

This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is analysed that the source pocket located at the source-channel junction narrows the tunneling barrier width at the tunneling junction and thereby enhances the ON-state current of GAA-TFET. Further, it is obtained that the GDU resists the extension of carrier density (built-up under the gated region) towards the drain side (under the underlapped length), thereby suppressing the ambipolar current and reducing the parasitic capacitances of GAA-TFET. Consequently, the amalgamated merits of both engineering schemes are obtained in GDU-PNIN-GAA-TFET that thus conquers the greatest challenges faced by TFET. Thus, GDU-PNIN-GAA-TFET results in an up-gradation in the overall performance of GAA-TFET. Moreover, it is realised that the RF figure of merits FOMs such as cut-off frequency (fT) and maximum oscillation frequency (fMAX) are also considerably improved with integration of source pocket on GAA-TFET. Thus, the improved analog and RF performance of GDU-PNIN-GAA-TFET makes it ideal for low power and high-speed applications.

RF dual-gate-trench LDMOS on InGaAs with improved performance

NASA Astrophysics Data System (ADS)

Payal, M.; Singh, Y.

2018-02-01

A new power dual-gate-trench LDMOSFET (DGTLDMOS) structure implemented on emerging InGaAs material is proposed. The proposed device consists of two gates out of which one gate is placed horizontally on the surface while other gate is located vertically in a trench. The dual-gate structure of DGTLDMOS creates two channels in p-base which carry current simultaneously from drain to source. This not only enhances the drain current (ID) but also reduces specific on-resistance (Ron,sp) and improves the peak transconductance (gm) resulting higher cut-off frequency (fT) and maximum oscillation frequency (fmax). Another trench filled with Al2O3 is placed in the drift region between gate and drain to enhance reduced-surface-field effect leading to higher breakdown voltage (Vbr) even at increased drift region doping. Based on 2D simulations, it is demonstrate that a DGTLDMOS designed for Vbr of 90 V achieves 2.2 times higher ID, 10 times reduction in Ron,sp, 1.8 times improvement in gm, 2.8 times increase in fT, and 1.8 times improvement in fmax with 3.3 times reduction in cell pitch as compared to the conventional LDMOS.

Sub-THz Imaging Using Non-Resonant HEMT Detectors

PubMed Central

Delgado-Notario, Juan A.; Meziani, Yahya M.; Fobelets, Kristel

2018-01-01

Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si Schottky-gated MODFETs (Modulation-doped Field-Effect Transistor) was performed. The response of the strained-Si MODFET has been characterized at two frequencies: 150 and 300 GHz: The DC drain-to-source voltage transducing the THz radiation (photovoltaic mode) of 250-nm gate length transistors exhibited a non-resonant response that agrees with theoretical models and physics-based simulations of the electrical response of the transistor. When imposing a weak source-to-drain current of 5 μA, a substantial increase of the photoresponse was found. This increase is translated into an enhancement of the responsivity by one order of magnitude as compared to the photovoltaic mode, while the NEP (Noise Equivalent Power) is reduced in the subthreshold region. Strained-Si MODFETs demonstrated an excellent performance as detectors in THz imaging. PMID:29439437

Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors

NASA Astrophysics Data System (ADS)

Moglestue, C.; Buot, F. A.; Anderson, W. T.

1995-08-01

The lattice heating rate has been calculated for GaAs field-effect transistors of different source-drain channel design by means of the ensemble Monte Carlo particle model. Transport of carriers in the substrate and the presence of free surface charges are also included in our simulation. The actual heat generation was obtained by accounting for the energy exchanged with the lattice of the semiconductor during phonon scattering. It was found that the maximum heating rate takes place below the surface near the drain end of the gate. The results correlate well with a previous hydrodynamic energy transport estimate of the electronic energy density, but shifted slightly more towards the drain. These results further emphasize the adverse effects of hot electrons on the Ohmic contacts.

Linear increases in carbon nanotube density through multiple transfer technique.

PubMed

Shulaker, Max M; Wei, Hai; Patil, Nishant; Provine, J; Chen, Hong-Yu; Wong, H-S P; Mitra, Subhasish

2011-05-11

We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. We perform multiple transfers, whereby we transfer CNTs from several growth wafers onto the same target surface, thereby linearly increasing CNT density on the target substrate. This process, called transfer of nanotubes through multiple sacrificial layers, is highly scalable, and we demonstrate linear CNT density scaling up to 5 transfers. We also demonstrate that this linear CNT density increase results in an ideal linear increase in drain-source currents of carbon nanotube field effect transistors (CNFETs). Experimental results demonstrate that CNT density can be improved from 2 to 8 CNTs/μm, accompanied by an increase in drain-source CNFET current from 4.3 to 17.4 μA/μm.

Shuttle-promoted nano-mechanical current switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Taegeun, E-mail: tsong@ictp.it; Kiselev, Mikhail N.; Gorelik, Leonid Y.

2015-09-21

We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instabilitymore » and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.« less

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

PubMed

Li, Wenjun; Brubaker, Matt D; Spann, Bryan T; Bertness, Kris A; Fay, Patrick

2018-02-01

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10 8 , an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g m /SS of 0.41 μS/μm-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

NASA Astrophysics Data System (ADS)

Zhu, Wencong

Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because of its shorter channel length and wider width, however, it also exhibit higher gate leakage current (>10-7 A) than side channel (<10-7 A) due to larger Ga ion implantation and diffusion region in SiO2 after annealing. Hysteresis window increase and positive VON shift were also observed due to the interface trap density increase and carrier density suppression both by Ga ions. Laser interference lithography was applied to define the IGZO active region, which gives more flexibility on TFT channel dimension and circuit modification. He-Cd laser with 325 nm wavelength was used to define 2D array of IGZO islands with period of 2.5 im. Logic gate array was designed and fabricated by combining this 2D array of IGZO islands and FIB direct channel milling. After annealing, device shows on-off feature, but high temperature (400 °C) release more free carrier and results in negative shift of VON. The row selection voltage was also introduced in the design of logic gate array to act as switch of input signals to each row separately. However, due to the long input signal sweeping time, the leakage current cannot be overlooked. The idea can be verified by AC or short pulse input signal.

Diagnostic evaluations of a beam-shielded 8-cm mercury ion thruster

NASA Technical Reports Server (NTRS)

Nakanishi, S.

1978-01-01

An engineering model thruster fitted with a remotely actuated graphite fiber polyimide composite beam shield was tested in a 3- by 6.5-meter vacuum facility for in-situ assessment of beam shield effects on thruster performance. Accelerator drain current neutralizer floating potential and ion beam floating potential increased slightly when the shield was moved into position. A target exposed to the low density regions of the ion beam was used to map the boundaries of energetic fringe ions capable of sputtering. The particle efflux was evaluated by measurement of film deposits on cold, heated, bare, and enclosed glass slides.

Simulating the Effects of Drainage and Agriculture on Hydrology and Sediment in the Minnesota River Basin

NASA Astrophysics Data System (ADS)

Downer, C. W.; Pradhan, N. R.; Skahill, B. E.; Banitt, A. M.; Eggers, G.; Pickett, R. E.

2014-12-01

Throughout the Midwest region of the United States, slopes are relatively flat, soils tend to have low permeability, and local water tables are high. In order to make the region suitable for agriculture, farmers have installed extensive networks of ditches to drain off excess surface water and subsurface tiles to lower the water table and remove excess soil water in the root zone that can stress common row crops, such as corn and soybeans. The combination of tiles, ditches, and intensive agricultural land practices radically alters the landscape and hydrology. Within the watershed, tiles have outlets to both the ditch/stream network as well as overland locations, where the tile discharge appears to initiate gullies and exacerbate overland erosion. As part of the Minnesota River Basin Integrated Study we are explicitly simulating the tile and drainage systems in the watershed at multiple scales using the physics-based watershed model GSSHA (Gridded Surface Subsurface Hydrologic Analysis). The tile drainage system is simulated as a network of pipes that collect water from the local water table. Within the watershed, testing of the methods on smaller basins shows the ability of the model to simulate tile flow, however, application at the larger scale is hampered by the computational burden of simulating the flow in the complex tile drain networks that drain the agricultural fields. Modeling indicates the subsurface drains account for approximately 40% of the stream flow in the Seven Mile Creek sub-basin account in the late spring and early summer when the tile is flowing. Preliminary results indicate that agricultural tile drains increase overland erosion in the Seven Mile Creek watershed.

Vaginal Immunization to Elicit Primary T-Cell Activation and Dissemination

PubMed Central

Pettini, Elena; Prota, Gennaro; Ciabattini, Annalisa; Boianelli, Alessandro; Fiorino, Fabio; Pozzi, Gianni; Vicino, Antonio; Medaglini, Donata

2013-01-01

Primary T-cell activation at mucosal sites is of utmost importance for the development of vaccination strategies. T-cell priming after vaginal immunization, with ovalbumin and CpG oligodeoxynucleotide adjuvant as model vaccine formulation, was studied in vivo in hormone-synchronized mice and compared to the one induced by the nasal route. Twenty-four hours after both vaginal or nasal immunization, antigen-loaded dendritic cells were detected within the respective draining lymph nodes. Vaginal immunization elicited a strong recruitment of antigen-specific CD4+ T cells into draining lymph nodes that was more rapid than the one observed following nasal immunization. T-cell clonal expansion was first detected in iliac lymph nodes, draining the genital tract, and proliferated T cells disseminated towards distal lymph nodes and spleen similarly to what observed following nasal immunization. T cells were indeed activated by the antigen encounter and acquired homing molecules essential to disseminate towards distal lymphoid organs as confirmed by the modulation of CD45RB, CD69, CD44 and CD62L marker expression. A multi-type Galton Watson branching process, previously used for in vitro analysis of T-cell proliferation, was applied to model in vivo CFSE proliferation data in draining lymph nodes 57 hours following immunization, in order to calculate the probabilistic decision of a cell to enter in division, rest in quiescence or migrate/die. The modelling analysis indicated that the probability of a cell to proliferate was higher following vaginal than nasal immunization. All together these data show that vaginal immunization, despite the absence of an organized mucosal associated inductive site in the genital tract, is very efficient in priming antigen-specific CD4+ T cells and inducing their dissemination from draining lymph nodes towards distal lymphoid organs. PMID:24349003

Hydrograph Predictions of Glacial Lake Outburst Floods From an Ice-Dammed Lake

NASA Astrophysics Data System (ADS)

McCoy, S. W.; Jacquet, J.; McGrath, D.; Koschitzki, R.; Okuinghttons, J.

2017-12-01

Understanding the time evolution of glacial lake outburst floods (GLOFs), and ultimately predicting peak discharge, is crucial to mitigating the impacts of GLOFs on downstream communities and understanding concomitant surface change. The dearth of in situ measurements taken during GLOFs has left many GLOF models currently in use untested. Here we present a dataset of 13 GLOFs from Lago Cachet Dos, Aysen Region, Chile in which we detail measurements of key environmental variables (total volume drained, lake temperature, and lake inflow rate) and high temporal resolution discharge measurements at the source lake, in addition to well-constrained ice thickness and bedrock topography. Using this dataset we test two common empirical equations as well as the physically-based model of Spring-Hutter-Clarke. We find that the commonly used empirical relationships based solely on a dataset of lake volume drained fail to predict the large variability in observed peak discharges from Lago Cachet Dos. This disagreement is likely because these equations do not consider additional environmental variables that we show also control peak discharge, primarily, lake water temperature and the rate of meltwater inflow to the source lake. We find that the Spring-Hutter-Clarke model can accurately simulate the exponentially rising hydrographs that are characteristic of ice-dammed GLOFs, as well as the order of magnitude variation in peak discharge between events if the hydraulic roughness parameter is allowed to be a free fitting parameter. However, the Spring-Hutter-Clarke model over predicts peak discharge in all cases by 10 to 35%. The systematic over prediction of peak discharge by the model is related to its abrupt flood termination that misses the observed steep falling limb of the flood hydrograph. Although satisfactory model fits are produced, the range in hydraulic roughness required to obtain these fits across all events was large, which suggests that current models do not completely capture the physics of these systems, thus limiting their ability to truly predict peak discharges using only independently constrained parameters. We suggest what some of these missing physics might be.

Sediment transport by irrigation return flows in four small drains within the DID-18 drainage of the Sulphur Creek basin, Yakima County, Washington, April 1979 to October 1981

USGS Publications Warehouse

Boucher, P.R.

1984-01-01

Suspended sediment, water discharges, and water temperatures were monitored in four small drains in the DID-18 basin of the Sulphur Creek basin, a tributary to the Yakima River, Washington. Water outflow, inflow, and miscellaneous sites were also monitored. The information was used to evaluate the effectiveness of management practices in reducing sediment loads in irrigated areas. This study was one of seven Model Implementation Plan projects selected by the U.S. Soil Conservation Service and the U.S. Environmental Protection Agency to demonstrate the effectiveness of institutional and administrative implementation of management plans. Sediment discharges from the four basins could not be correlated with changes in management practices, because Imhoff Cone readings collected for the study showed no statistical differences between the three irrigation seasons. However, one drain acted as a sink for sediment where more lands were sprinkler irrigated; this drain had a smaller proportion of row crops than did the other three drains. (USGS)

Organic [6,6]-phenyl-C61-butyric-acid-methyl-ester field effect transistors: Analysis of the contact properties by combined photoemission spectroscopy and electrical measurements

NASA Astrophysics Data System (ADS)

Scheinert, S.; Grobosch, M.; Sprogies, J.; Hörselmann, I.; Knupfer, M.; Paasch, G.

2013-05-01

Carrier injection barriers determined by photoemission spectroscopy for organic/metal interfaces are widely accepted to determine the performance of organic field-effect transistors (OFET), which strongly depends on this interface at the source/drain contacts. This assumption is checked here in detail, and a more sophisticated connection is presented. According to the preparation process described in our recently published article [S. Scheinert, J. Appl. Phys. 111, 064502 (2012)], we prepared PCBM/Au and PCBM/Al samples to characterize the interface by photoemission and electrical measurements of PCBM based OFETs with bottom and top (TOC) contacts, respectively. The larger drain currents for TOC OFETs indicate the presence of Schottky contacts at source/drain for both metals. The hole injection barrier as determined by photoemission is 1.8 eV for both Al and Au. Therefore, the electron injection barriers are also the same. In contrast, the drain currents are orders of magnitude larger for the transistors with the Al contacts than for those with the Au contacts. We show that indeed the injection is determined by two other properties measured also by photoemission, the (reduced) work functions, and the interface dipoles, which have different sign for each contact material. In addition, we demonstrate by core-level and valence band photoemission that the deposition of gold as top contact onto PCBM results in the growth of small gold clusters. With increasing gold coverage, the clusters grow inside and begin to form a metallic, but not uniform, closed film onto PCBM.

DRAINWAT--Based Methods For Estimating Nitrogen Transport in Poorly Drained Watersheds

Treesearch

Devendra M. Amatya; George M. Chescheir; Glenn P. Fernandez; R. Wayne Skaggs; J.W. Gilliam

2004-01-01

Methods are needed to quantify effects of land use and management practices on nutrient and sediment loads at the watershed scale. Two methods were used to apply a DRAINMOD-based watershed-scale model (DRAINWAT) to estimate total nitrogen (N) transport from a poorly drained, forested watershed. In both methods, in-stream retention or losses of N were calculated with a...

X-DRAIN and XDS: a simplified road erosion prediction method

Treesearch

William J. Elliot; David E. Hall; S. R. Graves

1998-01-01

To develop a simple road sediment delivery tool, the WEPP program modeled sedimentation from forest roads for more than 50,000 combinations of distance between cross drains, road gradient, soil texture, distance from stream, steepness of the buffer between the road and the stream, and climate. The sediment yield prediction from each of these runs was stored in a data...

Physicians' brain drain in Greece: a perspective on the reasons why and how to address it.

PubMed

Ifanti, Amalia A; Argyriou, Andreas A; Kalofonou, Foteini H; Kalofonos, Haralabos P

2014-08-01

This review study explores the "brain drain" currently evident amongst physicians in Greece, which is closely linked to the country's severe financial woes. In particular, it shows that the Greek healthcare labour market offers few opportunities and thus physicians are forsaking their homeland to seek jobs abroad. The main causes generating or greatly inflating the brain drain of Greek physicians are unemployment, job insecurity, income reduction, over-taxation, together with limited budgets for research institutes. It is argued that, to stop the evolving mass exodus of skilled medical staff, policy-makers should implement fiscal and human-centred approaches, thoroughly safeguarding both the right of skilled Greek physicians to work in their homeland with motivation and dignity, but also of Greek citizens to continue receiving high-quality healthcare by skilled physicians at times when this is mostly needed. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

Study on effective MOSFET channel length extracted from gate capacitance

NASA Astrophysics Data System (ADS)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Mitigating wildfire carbon loss in managed northern peatlands through restoration.

PubMed

Granath, Gustaf; Moore, Paul A; Lukenbach, Maxwell C; Waddington, James M

2016-06-27

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha(-1) emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change.

Mitigating wildfire carbon loss in managed northern peatlands through restoration

NASA Astrophysics Data System (ADS)

Granath, Gustaf; Moore, Paul A.; Lukenbach, Maxwell C.; Waddington, James M.

2016-06-01

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha-1 emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change.

Mitigating wildfire carbon loss in managed northern peatlands through restoration

PubMed Central

Granath, Gustaf; Moore, Paul A.; Lukenbach, Maxwell C.; Waddington, James M.

2016-01-01

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha−1 emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change. PMID:27346604

Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Upadhyay, Bhanu B.; Takhar, Kuldeep; Jha, Jaya; Ganguly, Swaroop; Saha, Dipankar

2018-03-01

We demonstrate that N2 and O2 plasma treatment followed by rapid thermal annealing leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor. Both the source/drain access and gate regions respond positively improving the transistor characteristics albeit to different extents. Characterizations indicate that the surface show the characteristics of that of a higher band-gap material like AlxOy and GaxOy along with N-vacancy in the sub-surface region. The N-vacancy leads to an increased two-dimensional electron gas density. The formation of oxides lead to a reduced gate leakage current and surface passivation. The DC characteristics show increased transconductance, saturation drain current, ON/OFF current ratio, sub-threshold swing and lower ON resistance by a factor of 2.9, 2.0, 103.3 , 2.3, and 2.1, respectively. The RF characteristics show an increase in unity current gain frequency by a factor of 1.7 for a 500 nm channel length device.

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

Comparative and Developmental Anatomy of Cardiac Lymphatics

PubMed Central

Ratajska, A.; Gula, G.; Flaht-Zabost, A.; Czarnowska, E.; Ciszek, B.; Jankowska-Steifer, E.; Niderla-Bielinska, J.; Radomska-Lesniewska, D.

2014-01-01

The role of the cardiac lymphatic system has been recently appreciated since lymphatic disturbances take part in various heart pathologies. This review presents the current knowledge about normal anatomy and structure of lymphatics and their prenatal development for a better understanding of the proper functioning of this system in relation to coronary circulation. Lymphatics of the heart consist of terminal capillaries of various diameters, capillary plexuses that drain continuously subendocardial, myocardial, and subepicardial areas, and draining (collecting) vessels that lead the lymph out of the heart. There are interspecies differences in the distribution of lymphatic capillaries, especially near the valves, as well as differences in the routes and number of draining vessels. In some species, subendocardial areas contain fewer lymphatic capillaries as compared to subepicardial parts of the heart. In all species there is at least one collector vessel draining lymph from the subepicardial plexuses and running along the anterior interventricular septum under the left auricle and further along the pulmonary trunk outside the heart and terminating in the right venous angle. The second collector assumes a different route in various species. In most mammalian species the collectors run along major branches of coronary arteries, have valves and a discontinuous layer of smooth muscle cells. PMID:24592145

Comparative and developmental anatomy of cardiac lymphatics.

PubMed

Ratajska, A; Gula, G; Flaht-Zabost, A; Czarnowska, E; Ciszek, B; Jankowska-Steifer, E; Niderla-Bielinska, J; Radomska-Lesniewska, D

2014-01-01

The role of the cardiac lymphatic system has been recently appreciated since lymphatic disturbances take part in various heart pathologies. This review presents the current knowledge about normal anatomy and structure of lymphatics and their prenatal development for a better understanding of the proper functioning of this system in relation to coronary circulation. Lymphatics of the heart consist of terminal capillaries of various diameters, capillary plexuses that drain continuously subendocardial, myocardial, and subepicardial areas, and draining (collecting) vessels that lead the lymph out of the heart. There are interspecies differences in the distribution of lymphatic capillaries, especially near the valves, as well as differences in the routes and number of draining vessels. In some species, subendocardial areas contain fewer lymphatic capillaries as compared to subepicardial parts of the heart. In all species there is at least one collector vessel draining lymph from the subepicardial plexuses and running along the anterior interventricular septum under the left auricle and further along the pulmonary trunk outside the heart and terminating in the right venous angle. The second collector assumes a different route in various species. In most mammalian species the collectors run along major branches of coronary arteries, have valves and a discontinuous layer of smooth muscle cells.

On the design of GaN vertical MESFETs on commercial LED sapphire wafers

NASA Astrophysics Data System (ADS)

Atalla, Mahmoud R. M.; Noor Elahi, Asim M.; Mo, Chen; Jiang, Zhenyu; Liu, Jie; Ashok, S.; Xu, Jian

2016-12-01

Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

PubMed Central

Zheng, Jiaxin; Wang, Lu; Quhe, Ruge; Liu, Qihang; Li, Hong; Yu, Dapeng; Mei, Wai-Ning; Shi, Junjie; Gao, Zhengxiang; Lu, Jing

2013-01-01

Radio-frequency application of graphene transistors is attracting much recent attention due to the high carrier mobility of graphene. The measured intrinsic cut-off frequency (fT) of graphene transistor generally increases with the reduced gate length (Lgate) till Lgate = 40 nm, and the maximum measured fT has reached 300 GHz. Using ab initio quantum transport simulation, we reveal for the first time that fT of a graphene transistor still increases with the reduced Lgate when Lgate scales down to a few nm and reaches astonishing a few tens of THz. We observe a clear drain current saturation when a band gap is opened in graphene, with the maximum intrinsic voltage gain increased by a factor of 20. Our simulation strongly suggests it is possible to design a graphene transistor with an extraordinary high fT and drain current saturation by continuously shortening Lgate and opening a band gap. PMID:23419782

Shot noise: from Schottky's vacuum tube to present-day quantum devices

NASA Astrophysics Data System (ADS)

Schonenberger, Christian; Oberholzer, Stefan

2004-05-01

Shot-noise in the electrical current through a 'device' is caused by random processes that determine the electron transport from source to drain. Two sources can be distinguished: on the hand, electrons may randomly emanate from the contacts (source and drain), because the relevant states in the reservoirs fluctuate. On the other hand, the transmission through the device is non-deterministic (non-classical). As we demonstrate in this article the former dominates noise in the vacuum tube, whereas the latter applies to coherent mesoscopic devices, which have been studied in great detail during the last decade.

Management of Chest Drains After Thoracic Resections.

PubMed

Filosso, Pier Luigi; Sandri, Alberto; Guerrera, Francesco; Roffinella, Matteo; Bora, Giulia; Solidoro, Paolo

2017-02-01

Immediately after lung resection, air tends to collect in the retrosternal part of the chest wall (in supine position), and fluids in its lower part (costodiaphragmatic sinus). Several general thoracic surgery textbooks currently recommend the placement of 2 chest tubes after major pulmonary resections, one anteriorly, to remove air, and another into the posterior and basilar region, to drain fluids. Recently, several authors advocated the placement of a single chest tube. In terms of air and fluid drainage, this technique demonstrated to be as effective as the conventional one after wedge resection or uncomplicated lobectomy. Copyright © 2016 Elsevier Inc. All rights reserved.

Photon-assisted quantum transport in quantum point contacts

NASA Astrophysics Data System (ADS)

Hu, Qing

1993-02-01

We have studied the feasibility of photon-assisted quantum transport in semiconductor quantum point contacts or electron waveguides. Due to photon-induced intersubband transitions, it is expected that the drain/source conductance of the quantum point contacts can be modulated by far-infrared (f not less than 300 GHz) radiation, which is similar to the photon-assisted tunneling in superconducting tunnel junctions. An antenna/gate electrodes structure will be used to couple far-infrared photons into quantum point contacts of submicron dimensions. A calculation of the photon-induced drain/source current as a function of the far-infrared radiation power is also presented.

Performance analysis of junction-less double Gate n-p-n impact ionization MOS transistor (JLDG n-IMOS)

NASA Astrophysics Data System (ADS)

Chauhan, Manvendra Singh; Chauhan, R. K.

2018-04-01

This paper demonstrates a Junction-less Double Gate n-p-n Impact ionization MOS transistor (JLDG n-IMOS) on a very light doped p-type silicon body. Device structure proposed in the paper is based on charge plasma concept. There is no metallurgical junctions in the proposed device and does not need any impurity doping to create the drain and source regions. Due to doping-less nature, the fabrication process is simple for JLDG n-IMOS. The double gate engineering in proposed device leads to reduction in avalanche breakdown via impact ionization, generating large number of carriers in drain-body junction, resulting high ION current, small IOFF current and great improvement in ION/IOFF ratio. The simulation and examination of the proposed device have been performed on ATLAS device simulatorsoftware.

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

NASA Technical Reports Server (NTRS)

Niedra, Janis M.; Schwarze, Gene E.

2005-01-01

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.

PubMed

Wang, Dapeng; Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-04-05

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses ( T IGZO ) are investigated. As the T IGZO increased, the turn-on voltage ( V on ) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²·V −1 ·s −1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the T IGZO . The PBS results exhibit that the V on shift is aggravated as the T IGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various T IGZO values is revealed using current–voltage and capacitance–voltage ( C – V ) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source ( C gs ) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the T IGZO value increased, the hump in the off state of the C gs curve was gradually weakened.

Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam

NASA Astrophysics Data System (ADS)

Gonçalves Filho, Luiz C.; Monte, David S.; Barros, Fabio R.; Santos, Luiz A. P.

2018-01-01

MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.

Water resources planning for rivers draining into Mobile Bay. Part 2: Non-conservative species transport models

NASA Technical Reports Server (NTRS)

April, G. C.; Liu, H. A.

1975-01-01

Total coliform group bacteria were selected to expand the mathematical modeling capabilities of the hydrodynamic and salinity models to understand their relationship to commercial fishing ventures within bay waters and to gain a clear insight into the effect that rivers draining into the bay have on water quality conditions. Parametric observations revealed that temperature factors and river flow rate have a pronounced effect on the concentration profiles, while wind conditions showed only slight effects. An examination of coliform group loading concentrations at constant river flow rates and temperature shows these loading changes have an appreciable influence on total coliform distribution within Mobile Bay.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities.

PubMed

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-04-21

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 10(4) ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)(-1) just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

PubMed Central

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-01-01

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 104 ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)−1 just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling. PMID:27098051

Long-term hydrology and water quality of a drained pine plantation in North Carolina

Treesearch

D.M. Amatya; R.W. Skaggs

2011-01-01

Long-term data provide a basis for understanding natural variability, reducing uncertainty in model inputs and parameter estimation, and developing new hypotheses. This article evaluates 21 years (1988-2008) of hydrologic data and 17 years (1988-2005) of water quality data from a drained pine plantation in eastern North Carolina. The plantation age was 14 years at the...

Organic electrochemical transistors for cell-based impedance sensing

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan; Ramuz, Marc; Leleux, Pierre; Hama, Adel; Huerta, Miriam; Owens, Roisin M.

2015-01-01

Electrical impedance sensing of biological systems, especially cultured epithelial cell layers, is now a common technique to monitor cell motion, morphology, and cell layer/tissue integrity for high throughput toxicology screening. Existing methods to measure electrical impedance most often rely on a two electrode configuration, where low frequency signals are challenging to obtain for small devices and for tissues with high resistance, due to low current. Organic electrochemical transistors (OECTs) are conducting polymer-based devices, which have been shown to efficiently transduce and amplify low-level ionic fluxes in biological systems into electronic output signals. In this work, we combine OECT-based drain current measurements with simultaneous measurement of more traditional impedance sensing using the gate current to produce complex impedance traces, which show low error at both low and high frequencies. We apply this technique in vitro to a model epithelial tissue layer and show that the data can be fit to an equivalent circuit model yielding trans-epithelial resistance and cell layer capacitance values in agreement with literature. Importantly, the combined measurement allows for low biases across the cell layer, while still maintaining good broadband signal.

Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimatani, Masaaki; Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp; Fujisawa, Daisuke

2016-03-15

Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illumination in graphene-based phototransistors with n-doped Si substrates, but not those with p-doped substrates. The source-drain current and substrate current were investigated with and without illumination for both p-type and n-type Si substrates. The decay time of the drain-source current indicates that the Si substrate, SiO{sub 2} layer, and metal electrode comprise a metal-oxide-semiconductor (MOS) capacitor due tomore » the presence of defects at the interface between the Si substrate and SiO{sub 2} layer. The difference in the diffusion time of the intrinsic major carriers (electrons) and the photogenerated electron-hole pairs to the depletion layer delays the application of the gate voltage to the graphene channel. Therefore, the giant Dirac point shift is attributed to the n-type Si substrate current. This phenomenon can be exploited to realize high-performance graphene-based phototransistors.« less

Improved modeling on the RF behavior of InAs/AlSb HEMTs

NASA Astrophysics Data System (ADS)

Guan, He; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen

2015-12-01

The leakage current and the impact ionization effect causes a drawback for the performance of InAs/AlSb HEMTs due to the InAs channel with a very narrow band gap of 0.35 eV. In this paper, the conventional HEMT small-signal model was enhanced to characterize the RF behavior for InAs/AlSb HEMTs. The additional gate leakage current induced by the impact ionization was modeled by adding two resistances RGh1 and RGh2 shunting the Cgs-Ri and Cgd-Rj branches, respectively, and the ionized-drain current was characterized by an additional resistance Rmi parallel with the output resistance Rds, meanwhile the influence of the impact ionization on the transconductance was modeled by an additional current source gmi controlled by Vgs. The additional inductance, evaluated as a function of f(ω, R), was introduced to characterize the frequency dependency of impact ionization by using the impact ionization effective rate 1/τi and a new frequency response rate factor n, which guaranteed the enhanced model reliable for a wide frequency range. As a result, the enhanced model achieved good agreement with the measurements of the S-parameters and Y-parameters for a wide frequency range, moreover, the simulated results of the stability factor K, the cutoff frequency fT, the maximum frequency of oscillation fmax, and the unilateral Mason's gain U were estimated to approach the experimental results with a high degree.

Modelling methane fluxes from managed and restored peatlands

NASA Astrophysics Data System (ADS)

Cresto Aleina, F.; Rasche, L.; Hermans, R.; Subke, J. A.; Schneider, U. A.; Brovkin, V.

2015-12-01

European peatlands have been extensively managed over past centuries. Typical management activities consisted of drainage and afforestation, which lead to considerable damage to the peat and potentially significant carbon loss. Recent efforts to restore previously managed peatlands have been carried out throughout Europe. These restoration efforts have direct implications for water table depth and greenhouse gas emissions, thus impacting on the ecosystem services provided by peatland areas. In order to quantify the impact of peatland restoration on water table depth and greenhouse gas budget, We coupled the Environmental Policy Integrated Climate (EPIC) model to a process-based model for methane emissions (Walter and Heimann, 2000). The new model (EPIC-M) can potentially be applied at the European and even at the global scale, but it is yet to be tested and evaluated. We present results of this new tool from different peatlands in the Flow Country, Scotland. Large parts of the peatlands of the region have been drained and afforested during the 1980s, but since the late 1990s, programs to restore peatlands in the Flow Country have been enforced. This region offers therefore a range of peatlands, from near pristine, to afforested and drained, with different resoration ages in between, where we can apply the EPIC-M model and validate it against experimental data from all land stages of restoration. Goals of this study are to evaluate the EPIC-M model and its performances against in situ measurements of methane emissions and water table changes in drained peatlands and in restored ones. Secondly, our purpose is to study the environmental impact of peatland restoration, including methane emissions, due to the rewetting of drained surfaces. To do so, we forced the EPIC-M model with local meteorological and soil data, and simulated soil temperatures, water table dynamics, and greenhouse gas emissions. This is the first step towards a European-wide application of the EPIC-M model for the assessment of the environmental impact of peatland restoration.

Modeling water table dynamics in managed and restored peatlands

NASA Astrophysics Data System (ADS)

Cresto Aleina, Fabio; Rasche, Livia; Hermans, Renée; Subke, Jens-Arne; Schneider, Uwe; Brovkin, Victor

2016-04-01

European peatlands have been extensively managed over past centuries. Typical management activities consisted of drainage and afforestation, which lead to considerable damage to the peat and potentially significant carbon loss. Recent efforts to restore previously managed peatlands have been carried out throughout Europe. These restoration efforts have direct implications for water table depth and greenhouse gas emissions, thus impacting on the ecosystem services provided by peatland areas. In order to quantify the impact of peatland restoration on water table depth and greenhouse gas budget, We coupled the Environmental Policy Integrated Climate (EPIC) model to a process-based model for methane emissions (Walter and Heimann, 2000). The new model (EPIC-M) can potentially be applied at the European and even at the global scale, but it is yet to be tested and evaluated. We present results of this new tool from different peatlands in the Flow Country, Scotland. Large parts of the peatlands of the region have been drained and afforested during the 1980s, but since the late 1990s, programs to restore peatlands in the Flow Country have been enforced. This region offers therefore a range of peatlands, from near pristine, to afforested and drained, with different resoration ages in between, where we can apply the EPIC-M model and validate it against experimental data from all land stages of restoration Goals of this study are to evaluate the EPIC-M model and its performances against in situ measurements of methane emissions and water table changes in drained peatlands and in restored ones. Secondly, our purpose is to study the environmental impact of peatland restoration, including methane emissions, due to the rewetting of drained surfaces. To do so, we forced the EPIC-M model with local meteorological and soil data, and simulated soil temperatures, water table dynamics, and greenhouse gas emissions. This is the first step towards a European-wide application of the EPIC-M model for the assessment of the environmental impact of peatland restoration.

Evaluation of the hooghoudt and kirkham tile drain equations in the soil and water assessment tool to simulate tile flow and nitrate-nitrogen.

PubMed

Moriasi, Daniel N; Gowda, Prasanna H; Arnold, Jeffrey G; Mulla, David J; Ale, Srinivasulu; Steiner, Jean L; Tomer, Mark D

2013-11-01

Subsurface tile drains in agricultural systems of the midwestern United States are a major contributor of nitrate-N (NO-N) loadings to hypoxic conditions in the Gulf of Mexico. Hydrologic and water quality models, such as the Soil and Water Assessment Tool, are widely used to simulate tile drainage systems. The Hooghoudt and Kirkham tile drain equations in the Soil and Water Assessment Tool have not been rigorously tested for predicting tile flow and the corresponding NO-N losses. In this study, long-term (1983-1996) monitoring plot data from southern Minnesota were used to evaluate the SWAT version 2009 revision 531 (hereafter referred to as SWAT) model for accurately estimating subsurface tile drain flows and associated NO-N losses. A retention parameter adjustment factor was incorporated to account for the effects of tile drainage and slope changes on the computation of surface runoff using the curve number method (hereafter referred to as Revised SWAT). The SWAT and Revised SWAT models were calibrated and validated for tile flow and associated NO-N losses. Results indicated that, on average, Revised SWAT predicted monthly tile flow and associated NO-N losses better than SWAT by 48 and 28%, respectively. For the calibration period, the Revised SWAT model simulated tile flow and NO-N losses within 4 and 1% of the observed data, respectively. For the validation period, it simulated tile flow and NO-N losses within 8 and 2%, respectively, of the observed values. Therefore, the Revised SWAT model is expected to provide more accurate simulation of the effectiveness of tile drainage and NO-N management practices. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

Soil surface CO2 flux in a boreal black spruce fire chronosequence

NASA Astrophysics Data System (ADS)

Wang, Chuankuan; Bond-Lamberty, Ben; Gower, Stith T.

2003-02-01

Understanding the effects of wildfire on the carbon (C) cycle of boreal forests is essential to quantifying the role of boreal forests in the global carbon cycle. Soil surface CO2 flux (Rs), the second largest C flux in boreal forests, is directly and indirectly affected by fire and is hypothesized to change during forest succession following fire. The overall objective of this study was to measure and model Rs for a black spruce (Picea mariana [Mill.] BSP) postfire chronosequence in northern Manitoba, Canada. The experiment design was a nested factorial that included two soil drainage classes (well and poorly drained) × seven postfire aged stands. Specific objectives were (1) to quantify the relationship between Rs and soil temperature for different aged boreal black spruce forests in well-drained and poorly drained soil conditions, (2) to examine Rs dynamics along postfire successional stands, and (3) to estimate annual soil surface CO2 flux for these ecosystems. Soil surface CO2 flux was significantly affected by soil drainage class (p = 0.014) and stand age (p = 0.006). Soil surface CO2 flux was positively correlated to soil temperature (R2 = 0.78, p < 0.001), but different models were required for each drainage class × aged stand combination. Soil surface CO2 flux was significantly greater at the well-drained than the poorly drained stands (p = 0.007) during growing season. Annual soil surface CO2 flux for the 1998, 1995, 1989, 1981, 1964, 1930, and 1870 burned stands averaged 226, 412, 357, 413, 350, 274, and 244 g C m-2 yr-1 in the well-drained stands and 146, 380, 300, 303, 256, 233, and 264 g C m-2 yr-1 in the poorly drained stands. Soil surface CO2 flux during the winter (from 1 November to 30 April) comprised from 5 to 19% of the total annual Rs. We speculate that the smaller soil surface CO2 flux in the recently burned than the older stands is mainly caused by decreased root respiration.

Soil surface CO2 flux in a boreal black spruce fire chronosequence

NASA Astrophysics Data System (ADS)

Wang, Chuankuan; Bond-Lamberty, Ben; Gower, Stith T.

2002-02-01

Understanding the effects of wildfire on the carbon (C) cycle of boreal forests is essential to quantifying the role of boreal forests in the global carbon cycle. Soil surface CO2 flux (Rs), the second largest C flux in boreal forests, is directly and indirectly affected by fire and is hypothesized to change during forest succession following fire. The overall objective of this study was to measure and model Rs for a black spruce (Picea mariana [Mill.] BSP) postfire chronosequence in northern Manitoba, Canada. The experiment design was a nested factorial that included two soil drainage classes (well and poorly drained) × seven postfire aged stands. Specific objectives were (1) to quantify the relationship between Rs and soil temperature for different aged boreal black spruce forests in well-drained and poorly drained soil conditions, (2) to examine Rs dynamics along postfire successional stands, and (3) to estimate annual soil surface CO2 flux for these ecosystems. Soil surface CO2 flux was significantly affected by soil drainage class (p = 0.014) and stand age (p = 0.006). Soil surface CO2 flux was positively correlated to soil temperature (R2 = 0.78, p < 0.001), but different models were required for each drainage class × aged stand combination. Soil surface CO2 flux was significantly greater at the well-drained than the poorly drained stands (p = 0.007) during growing season. Annual soil surface CO2 flux for the 1998, 1995, 1989, 1981, 1964, 1930, and 1870 burned stands averaged 226, 412, 357, 413, 350, 274, and 244 g C m-2 yr-1 in the well-drained stands and 146, 380, 300, 303, 256, 233, and 264 g C m-2 yr-1 in the poorly drained stands. Soil surface CO2 flux during the winter (from 1 November to 30 April) comprised from 5 to 19% of the total annual Rs. We speculate that the smaller soil surface CO2 flux in the recently burned than the older stands is mainly caused by decreased root respiration.

A field effect glucose sensor with a nanostructured amorphous In-Ga-Zn-O network.

PubMed

Du, Xiaosong; Li, Yajuan; Herman, Gregory S

2016-11-03

Amorphous indium gallium zinc oxide (IGZO) field effect transistors (FETs) are a promising technology for a wide range of electronic applications. Herein, we fabricated and characterized FETs with a nanostructured IGZO network as a sensing transducer. The IGZO was patterned using colloidal lithography and electrohydrodynamic printing, where an 8 μm wide nanostructured close-packed hexagonal IGZO network was obtained. Electrical characterization of the nanostructured IGZO network FET demonstrated a drain-source current on-off ratio of 6.1 × 10 3 and effective electron mobilities of 3.6 cm 2 V -1 s -1 . The nanostructured IGZO network was functionalized by aminosilane groups with cross-linked glucose oxidase. The devices demonstrated a decrease in drain-source conductance and a more positive V ON with increasing glucose concentration. These changes are ascribed to the acceptor-like surface states associated with positively charged aminosilane groups attached to the nanostructured IGZO surface. Continuous monitoring of the drain-source current indicates a stepwise and fully reversible response to glucose concentrations with a short response time. The specific catalytic reaction between the GOx enzyme and glucose eliminates interference from acetaminophen/ascorbic acid. We demonstrate that nanostructured IGZO FETs have improved sensitivity compared to non-nanostructured IGZO for sensing glucose and can be potentially extended to other biosensor technologies.

Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection.

PubMed

Mirza, Misbah; Wang, Jiawei; Li, Dexing; Arabi, S Atika; Jiang, Chao

2014-04-23

We report on the fabrication of an organic field-effect transistor (OFET) of a monolayer pentacene thin film with top-contact electrodes for the aim of ammonia (NH3) gas detection by monitoring changes in its drain current. A top-contact configuration, in which source and drain electrodes on a flexible stamp [poly(dimethylsiloxane)] were directly contacted with the monolayer pentacene film, was applied to maintain pentacene arrangement ordering and enhance the monolayer OFET detection performance. After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity. This sensitivity enhancement to a limit of the 10 ppm level was attributed to an increase of charge trapping in the carrier channel, and the amount of trapped states was experimentally evaluated by the threshold voltage shift induced by the absorbed NH3 molecular analyte. In contrast, a conventional device with a 50-nm-thick pentacene layer displayed much higher mobility but lower response to NH3 gas, arising from the impediment of analyte penetrating into the conductive channel, owing to the thick pentacene film.

I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide

NASA Astrophysics Data System (ADS)

Alekseev, P. A.; Geydt, P.; Dunaevskiy, M. S.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

2017-09-01

The control of nanowire-based device performance requires knowledge about the transport of charge carriers and its limiting factors. We present the experimental and modeled results of a study of electrical properties of GaAs nanowires (NWs), considering their native oxide cover. Measurements of individual vertical NWs were performed by conductive atomic force microscopy (C-AFM). Experimental C-AFM observations with numerical simulations revealed the complex resistive behavior of NWs. A hysteresis of current-voltage characteristics of the p-doped NWs as-grown on substrates with different types of doping was registered. The emergence of hysteresis was explained by the trapping of majority carriers in the surface oxide layer near the reverse-biased barriers under the source-drain current. It was found that the accumulation of charge increases the current for highly doped p+-NWs on n+-substrates, while for moderately doped p-NWs on p+-substrates, charge accumulation decreases the current due to blocking of the conductive channel of NWs.

Drainage after Modified Radical Mastectomy – A Methodological Mini-Review

PubMed Central

Tsocheva, Dragostina; Marinova, Katerina; Dobrev, Emil; Nenkov, Rumen

2017-01-01

Breast cancer is a socially relevant group of malignant conditions of the mammary gland, affecting both males and females. Most commonly the surgical approach of choice is a modified radical mastectomy (MRM), due to it allowing for both the removal of the main tumor mass and adjacent glandular tissue, which are suspected of infiltration and multifocality of the process, and a sentinel axillary lymph node removal. Most common post-surgical complications following MRM are the formation of a hematoma, the infection of the surgical wound and the formation of a seroma. These post-surgical complications can, at least in part, be attributed to the drainage of the surgical wound. However, the lack of modern and official guidelines provides an ample scope for innovation, but also leads to a need for a randomized comparison of the results. We compared different approaches to wound drainage after MRM, reviewed based on the armamentarium, number of drains, location, type of drainage system, timing of drain removal and no drainage alternatives. Currently, based on the general results, scientific and comparative discussions, seemingly the most affordable methodology with the best patient outcome, with regards to hospital stay and post-operative complications, is the placement of one medial to lateral (pectoro-axillary) drain with low negative pressure. Ideally, the drain should be removed on the second or third postoperative day or when the amount of drained fluid in the last 24 hours reaches below 50 milliliters. PMID:28929038

Conceptual modelling of E. coli in urban stormwater drains, creeks and rivers

NASA Astrophysics Data System (ADS)

Jovanovic, Dusan; Hathaway, Jon; Coleman, Rhys; Deletic, Ana; McCarthy, David T.

2017-12-01

Accurate estimation of faecal microorganism levels in water systems, such as stormwater drains, creeks and rivers, is needed for appropriate assessment of impacts on receiving water bodies and the risks to human health. The underlying hypothesis for this work is that a single conceptual model (the MicroOrganism Prediction in Urban Stormwater model - i.e. MOPUS) can adequately simulate microbial dynamics over a variety of water systems and wide range of scales; something which has not been previously tested. Additionally, the application of radar precipitation data for improvement of the model performance at these scales via more accurate areal averaged rainfall intensities was tested. Six comprehensive Escherichia coli (E. coli) datasets collected from five catchments in south-eastern Australia and one catchment in Raleigh, USA, were used to calibrate the model. The MOPUS rainfall-runoff model performed well at all scales (Nash-Sutcliffe E for instantaneous flow rates between 0.70 and 0.93). Sensitivity analysis showed that wet weather urban stormwater flows can be modelled with only three of the five rainfall runoff model parameters: routing coefficient (K), effective imperviousness (IMP) and time of concentration (TOC). The model's performance for representing instantaneous E. coli fluctuations ranged from 0.17 to 0.45 in catchments drained via pipe or open creek, and was the highest for a large riverine catchment (0.64); performing similarly, if not better, than other microbial models in literature. The model could also capture the variability in event mean concentrations (E = 0.17-0.57) and event loads (E = 0.32-0.97) at all scales. Application of weather radar-derived rainfall inputs caused lower overall performance compared to using gauged rainfall inputs in representing both flow and E. coli levels in urban drain catchments, with the performance improving with increasing catchment size and being comparable to the models that use gauged rainfall inputs at the large riverine catchment. These results demonstrate the potential of the MOPUS model and its ability to be applied to a wide range of catchment scales, including large riverine systems.

Experimental investigation on On-Off current ratio behavior near onset voltage for a pentacene based organic thin film transistor

NASA Astrophysics Data System (ADS)

Amrani, Aumeur El; Es-saghiri, Abdeljabbar; Boufounas, El-Mahjoub; Lucas, Bruno

2018-06-01

The performance of a pentacene based organic thin film transistor (OTFT) with polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is investigated. On the one hand, we showed that the threshold voltage increases with gate voltage, and on the other hand that it decreases with drain voltage. Thus, we noticed that the onset voltage shifts toward positive voltage values with the drain voltage increase. In addition, threshold-onset differential voltage (TODV) is proposed as an original approach to estimate an averaged carrier density in pentacene. Indeed, a value of about 4.5 × 1016 cm-3 is reached at relatively high gate voltage of -50 V; this value is in good agreement with that reported in literature with other technique measurements. However, at a low applied gate voltage, the averaged pentacene carrier density remains two orders of magnitude lower; it is of about 2.8 × 1014 cm-3 and remains similar to that obtained from space charge limited current approach for low applied bias voltage of about 2.2 × 1014 cm-3. Furthermore, high IOn/IOff and IOn/IOnset current ratios of 5 × 106 and 7.5 × 107 are reported for lower drain voltage, respectively. The investigated OTFTs also showed good electrical performance including carrier mobility increasing with gate voltage; mobility values of 4.5 × 10-2 cm2 V-1 s-1 and of 4.25 × 10-2 cm2 V-1 s-1 are reached for linear and saturation regimes, respectively. These results remain enough interesting since current modulation ratio exceeds a value of 107 that is a quite important requirement than high mobility for some particular logic gate applications.

High-power microstrip switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1974-01-01

Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.

Soil settlement analysis in soft soil by using preloading system and prefabricated vertical draining runway of Kualanamu Airport

NASA Astrophysics Data System (ADS)

Roesyanto; Iskandar, R.; Silalahi, S. A.; Fadliansyah

2018-02-01

The method of soil improvement, using the combination of prefabricated vertical drain (PVD) and preloading, was used to accelerate the process of consolidation and the consolidation settlement in the runway of Kualanamu International Airport, which was constructed on the soft soil sediment like silty clay. In this research, the investigated area was the runway of Kualanamu International Airport zone I which had 11 meter-thickness of soft soil. Geotechnic instruments surveyed was settlement plate. Monitoring was done toward the behavior of landfill such as basic soil settlement. The result were compared with the analysis of finite element method of full scale in Mohr-Coulomb model by verifying the vertical drain of asymmetric unit cell and equivalent plane strain unit cell condition. The results of the research showed that there were an interesting behavior between the data in field observation and finite element of Mohr-Coulomb model. It was also found that the result of soil settlement of finite element method of Mohr-Coulomb model was closed to the result of settlement plate monitoring.

Retention of Ag-specific memory CD4+ T cells in the draining lymph node indicates lymphoid tissue resident memory populations.

PubMed

Marriott, Clare L; Dutton, Emma E; Tomura, Michio; Withers, David R

2017-05-01

Several different memory T-cell populations have now been described based upon surface receptor expression and migratory capabilities. Here we have assessed murine endogenous memory CD4 + T cells generated within a draining lymph node and their subsequent migration to other secondary lymphoid tissues. Having established a model response targeting a specific peripheral lymph node, we temporally labelled all the cells within draining lymph node using photoconversion. Tracking of photoconverted and non-photoconverted Ag-specific CD4 + T cells revealed the rapid establishment of a circulating memory population in all lymph nodes within days of immunisation. Strikingly, a resident memory CD4 + T cell population became established in the draining lymph node and persisted for several months in the absence of detectable migration to other lymphoid tissue. These cells most closely resembled effector memory T cells, usually associated with circulation through non-lymphoid tissue, but here, these cells were retained in the draining lymph node. These data indicate that lymphoid tissue resident memory CD4 + T-cell populations are generated in peripheral lymph nodes following immunisation. © 2017 The Authors. European Journal of Immunology published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Simulation-based optimization framework for reuse of agricultural drainage water in irrigation.

PubMed

Allam, A; Tawfik, A; Yoshimura, C; Fleifle, A

2016-05-01

A simulation-based optimization framework for agricultural drainage water (ADW) reuse has been developed through the integration of a water quality model (QUAL2Kw) and a genetic algorithm. This framework was applied to the Gharbia drain in the Nile Delta, Egypt, in summer and winter 2012. First, the water quantity and quality of the drain was simulated using the QUAL2Kw model. Second, uncertainty analysis and sensitivity analysis based on Monte Carlo simulation were performed to assess QUAL2Kw's performance and to identify the most critical variables for determination of water quality, respectively. Finally, a genetic algorithm was applied to maximize the total reuse quantity from seven reuse locations with the condition not to violate the standards for using mixed water in irrigation. The water quality simulations showed that organic matter concentrations are critical management variables in the Gharbia drain. The uncertainty analysis showed the reliability of QUAL2Kw to simulate water quality and quantity along the drain. Furthermore, the sensitivity analysis showed that the 5-day biochemical oxygen demand, chemical oxygen demand, total dissolved solids, total nitrogen and total phosphorous are highly sensitive to point source flow and quality. Additionally, the optimization results revealed that the reuse quantities of ADW can reach 36.3% and 40.4% of the available ADW in the drain during summer and winter, respectively. These quantities meet 30.8% and 29.1% of the drainage basin requirements for fresh irrigation water in the respective seasons. Copyright © 2016 Elsevier Ltd. All rights reserved.

Simscape Modeling of a Custom Closed-Volume Tank

NASA Technical Reports Server (NTRS)

Fischer, Nathaniel P.

2015-01-01

The library for Mathworks Simscape does not currently contain a model for a closed volume fluid tank where the ullage pressure is variable. In order to model a closed-volume variable ullage pressure tank, it was necessary to consider at least two separate cases: a vertical cylinder, and a sphere. Using library components, it was possible to construct a rough model for the cylindrical tank. It was not possible to construct a model for a spherical tank, using library components, due to the variable area. It was decided that, for these cases, it would be preferable to create a custom library component to represent each case, using the Simscape language. Once completed, the components were added to models, where filling and draining the tanks could be simulated. When the models were performing as expected, it was necessary to generate code from the models and run them in Trick (a real-time simulation program). The data output from Trick was then compared to the output from Simscape and found to be within acceptable limits.

Skyrmion based universal memory operated by electric current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zang, Jiadong; Chien, Chia-Ling; Li, Yufan

2017-09-26

A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

Seasonal and circadian biases in bird tracking with solar GPS-tags.

PubMed

Silva, Rafa; Afán, Isabel; Gil, Juan A; Bustamante, Javier

2017-01-01

Global Positioning System (GPS) tags are nowadays widely used in wildlife tracking. This geolocation technique can suffer from fix loss biases due to poor satellite GPS geometry, that result in tracking data gaps leading to wrong research conclusions. In addition, new solar-powered GPS tags deployed on birds can suffer from a new "battery drain bias" currently ignored in movement ecology analyses. We use a GPS tracking dataset of bearded vultures (Gypaetus barbatus), tracked for several years with solar GPS tags, to evaluate the causes and triggers of fix and data retrieval loss biases. We compare two models of solar GPS tags using different data retrieval systems (Argos vs GSM-GPRS), and programmed with different duty cycles. Neither of the models was able to accomplish the duty cycle programed initially. Fix and data retrieval loss rates were always greater than expected, and showed non-random gaps in GPS locations. Number of fixes per month of tracking was a bad criterion to identify tags with smaller biases. Fix-loss rates were four times higher due to battery drain than due to poor GPS satellite geometry. Both tag models were biased due to the uneven solar energy available for the recharge of the tag throughout the annual cycle, resulting in greater fix-loss rates in winter compared to summer. In addition, we suggest that the bias found along the diurnal cycle is linked to a complex three-factor interaction of bird flight behavior, topography and fix interval. More fixes were lost when vultures were perching compared to flying, in rugged versus flat topography. But long fix-intervals caused greater loss of fixes in dynamic (flying) versus static situations (perching). To conclude, we emphasize the importance of evaluating fix-loss bias in current tracking projects, and deploying GPS tags that allow remote duty cycle updates so that the most appropriate fix and data retrieval intervals can be selected.

Seasonal and circadian biases in bird tracking with solar GPS-tags

PubMed Central

Afán, Isabel; Gil, Juan A.; Bustamante, Javier

2017-01-01

Global Positioning System (GPS) tags are nowadays widely used in wildlife tracking. This geolocation technique can suffer from fix loss biases due to poor satellite GPS geometry, that result in tracking data gaps leading to wrong research conclusions. In addition, new solar-powered GPS tags deployed on birds can suffer from a new “battery drain bias” currently ignored in movement ecology analyses. We use a GPS tracking dataset of bearded vultures (Gypaetus barbatus), tracked for several years with solar GPS tags, to evaluate the causes and triggers of fix and data retrieval loss biases. We compare two models of solar GPS tags using different data retrieval systems (Argos vs GSM-GPRS), and programmed with different duty cycles. Neither of the models was able to accomplish the duty cycle programed initially. Fix and data retrieval loss rates were always greater than expected, and showed non-random gaps in GPS locations. Number of fixes per month of tracking was a bad criterion to identify tags with smaller biases. Fix-loss rates were four times higher due to battery drain than due to poor GPS satellite geometry. Both tag models were biased due to the uneven solar energy available for the recharge of the tag throughout the annual cycle, resulting in greater fix-loss rates in winter compared to summer. In addition, we suggest that the bias found along the diurnal cycle is linked to a complex three-factor interaction of bird flight behavior, topography and fix interval. More fixes were lost when vultures were perching compared to flying, in rugged versus flat topography. But long fix-intervals caused greater loss of fixes in dynamic (flying) versus static situations (perching). To conclude, we emphasize the importance of evaluating fix-loss bias in current tracking projects, and deploying GPS tags that allow remote duty cycle updates so that the most appropriate fix and data retrieval intervals can be selected. PMID:29020062

Randomized Controlled Trial to Reduce Bacterial Colonization of Surgical Drains After Breast and Axillary Operations

PubMed Central

Degnim, Amy C.; Scow, Jeffrey S.; Hoskin, Tanya L.; Miller, Joyce P.; Loprinzi, Margie; Boughey, Judy C.; Jakub, James W.; Throckmorton, Alyssa; Patel, Robin; Baddour, Larry M.

2014-01-01

Objective To determine if bacterial colonization of drains can be reduced by local antiseptic interventions. Summary Background Drains are a potential source of bacterial entry into surgical wounds and may contribute to surgical site infection (SSI) after breast surgery. Methods Following IRB approval, patients undergoing total mastectomy and/or axillary lymph node dissection were randomized to standard drain care (control) or drain antisepsis (treated). Standard drain care comprised twice daily cleansing with alcohol swabs. Antisepsis drain care included 1) a chlorhexidine disc at the drain exit site and 2) irrigation of the drain bulb twice daily with dilute sodium hypochlorite (Dakin’s) solution. Cultures results of drain fluid and tubing were compared between control and antisepsis groups. Results Overall, 100 patients with 125 drains completed the study with 48 patients (58 drains) in the control group and 52 patients (67 drains) in the antisepsis group. Cultures of drain bulb fluid at one week were positive (1+ or greater growth) in 66% (38/58) of control drains compared to 21% of antisepsis drains (14/67), (p=0.0001). Drain tubing cultures demonstrated >50 CFU in 19% (8/43) of control drains versus 0% (0/53) of treated drains (p=0.004). SSI was diagnosed in 6 patients (6%) - 5 patients in the control group and 1 patient in the antisepsis group (p=0.06). Conclusions Simple and inexpensive local antiseptic interventions with a chlorhexidine disc and hypochlorite solution reduce bacterial colonization of drains. Based on these data, further study of drain antisepsis and its potential impact on SSI rate is warranted. PMID:23518704

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

NASA Astrophysics Data System (ADS)

Cai, Minxi; Yao, Ruohe

2017-10-01

An analytical model of the low-frequency noise (LFN) for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) in the subthreshold region is developed. For a-IGZO TFTs, relations between the device noise and the subgap defects are characterized based on the dominant multiple trapping and release (MTR) mechanism. The LFN is considered to be contributed from trapping/detrapping of carriers both into the border traps and the subgap density of states (DOS). It is revealed that the LFN behavior of a-IGZO TFTs in the subthreshold region is significantly influenced by the distribution of tail states, where MTR process prevails. The 1/f α (with α < 1) spectrum of the drain current noise is also related to the characteristic temperature of the tail states. The new method is introduced to calculate the LFN of devices by extracting the LFN-related DOS parameters from the current-voltage characteristics.

Mobility overestimation due to gated contacts in organic field-effect transistors

PubMed Central

Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

2016-01-01

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

NASA Astrophysics Data System (ADS)

Islam, R.; Uddin, M. M.; Hossain, M. Mofazzal; Matin, M. A.

The design of a 1μm gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrödinger-Poisson (QCSP) and two-dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42m2V-1s-1 at Vg=0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of ˜4.85mS/μm and a drain current density of more than 3.34mA/μm. A short-circuit current-gain cut-off frequency (fT) of 374GHz and a maximum oscillation frequency (fmax) of 645GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.

Voltage Amplifier Based on Organic Electrochemical Transistor.

PubMed

Braendlein, Marcel; Lonjaret, Thomas; Leleux, Pierre; Badier, Jean-Michel; Malliaras, George G

2017-01-01

Organic electrochemical transistors (OECTs) are receiving a great deal of attention as amplifying transducers for electrophysiology. A key limitation of this type of transistors, however, lies in the fact that their output is a current, while most electrophysiology equipment requires a voltage input. A simple circuit is built and modeled that uses a drain resistor to produce a voltage output. It is shown that operating the OECT in the saturation regime provides increased sensitivity while maintaining a linear signal transduction. It is demonstrated that this circuit provides high quality recordings of the human heart using readily available electrophysiology equipment, paving the way for the use of OECTs in the clinic.

Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT)

NASA Astrophysics Data System (ADS)

Wang, Wei; Wang, Long; Xu, Guangwei; Gao, Nan; Wang, Lingfei; Ji, Zhuoyu; Lu, Congyan; Lu, Nianduan; Li, Ling; Liu, Miwng

2017-08-01

Mobility degradation at high gate bias is often observed in organic thin film transistors. We propose a mechanism for this confusing phenomenon, based on the percolation theory with the presence of disordered energy landscape with an exponential density of states. Within a simple model we show how the surface states at insulator/organic interface trap a portion of channel carriers, and result in decrease of mobility as well as source/drain current with gate voltage. Depending on the competition between the carrier accumulation and surface trapping effect, two different carrier density dependences of mobility are obtained, in excellent agreement with experiment data.

Electrical signal transmission and gap junction regulation in a bone cell network: a cable model for an osteon

NASA Technical Reports Server (NTRS)

Zhang, D.; Cowin, S. C.; Weinbaum, S.

1997-01-01

A cable model is formulated to estimate the spatial distribution of intracellular electric potential and current, from the cement line to the lumen of an osteon, as the frequency of the loading and the conductance of the gap junction are altered. The model predicts that the characteristic diffusion time for the spread of current along the membrane of the osteocytic processes, 0.03 sec, is nearly the same as the predicted pore pressure relaxation time in Zeng et al. (Annals of Biomedical Engineering. 1994) for the draining of the bone fluid into the osteonal canal. This approximate equality of characteristic times causes the cable to behave as a high-pass, low-pass filter cascade with a maximum in the spectral response for the intracellular potential at approximately 30 Hz. This behavior could be related to the experiments of Rubin and McLeod (Osteoporosis, Academic Press, 1996) which show that live bone appears to be selectively responsive to mechanical loading in a specific frequency range (15-30 Hz) for several species.

A novel high-performance high-frequency SOI MESFET by the damped electric field

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Khayatian, Ahmad; Keshavarzi, Parviz

2016-06-01

In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate-drain and gate-source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

I-V Characteristics of a Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

Passively operated spool valve for drain-down freeze protection of thermosyphon water heaters. Final technical report

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

1982-04-30

The work done to extend the existing drain-down valve technology to provide passive drain-down freeze protection for thermosyphon-based solar water heaters is described. The basic design of the existing valve model is that of a spool valve, employing a cylindrical spool which moves axially in a mating cartridge to open and close o-rings at the two operating extremes (drain and operate) to perform the valving function. Three passive actuators to drive the basic valving mechanism were designed, fabricated, and tested. Two piping configurations used to integrate the spool valve with the thermosyphon system are described, as are the passive actuators.more » The three actuator designs are: photovoltaic driven, refrigerant-based bellows, and heat motor cable-drive designs. Costs are compared for the alternative actuator designs, and operating characteristics were examined for the thermosyphon system, including field tests. The market for the valve for thermosyphon systems is then assessed. (LEW)« less

Land use of drained peatlands: Greenhouse gas fluxes, plant production, and economics.

PubMed

Kasimir, Åsa; He, Hongxing; Coria, Jessica; Nordén, Anna

2017-10-10

Drained peatlands are hotspots for greenhouse gas (GHG) emissions, which could be mitigated by rewetting and land use change. We performed an ecological/economic analysis of rewetting drained fertile peatlands in a hemiboreal climate using different land use strategies over 80 years. Vegetation, soil processes, and total GHG emissions were modeled using the CoupModel for four scenarios: (1) business as usual-Norway spruce with average soil water table of -40 cm; (2) willow with groundwater at -20 cm; (3) reed canary grass with groundwater at -10 cm; and (4) a fully rewetted peatland. The predictions were based on previous model calibrations with several high-resolution datasets consisting of water, heat, carbon, and nitrogen cycling. Spruce growth was calibrated by tree-ring data that extended the time period covered. The GHG balance of four scenarios, including vegetation and soil, were 4.7, 7.1, 9.1, and 6.2 Mg CO 2 eq ha -1  year -1 , respectively. The total soil emissions (including litter and peat respiration CO 2 + N 2 O + CH 4 ) were 33.1, 19.3, 15.3, and 11.0 Mg CO 2 eq ha -1  year -1 , respectively, of which the peat loss contributed 35%, 24%, and 7% of the soil emissions for the three drained scenarios, respectively. No peat was lost for the wet peatland. It was also found that draining increases vegetation growth, but not as drastically as peat respiration does. The cost-benefit analysis (CBA) is sensitive to time frame, discount rate, and carbon price. Our results indicate that the net benefit was greater with a somewhat higher soil water table and when the peatland was vegetated with willow and reed canary grass (Scenarios 2 and 3). We conclude that saving peat and avoiding methane release using fairly wet conditions can significantly reduce GHG emissions, and that this strategy should be considered for land use planning and policy-making. © 2017 John Wiley & Sons Ltd.

Chest tube drainage of pleural effusions--an audit of current practice and complications at Hutt Hospital.

PubMed

Epstein, Erica; Jayathissa, Sisira; Dee, Stephen

2012-05-11

The aims of the study were to review small-bore chest tube insertion practices for drainage of pleural fluid at Hutt Valley District Health Board (HVDHB), to assess complications, and compare the findings with international data. Retrospective analysis of clinical records was completed on all chest tube insertions for drainage of pleural fluid at HVDHB from December 2008 to November 2009. Descriptive statistics were used to present demographics and tube-associated complications. Comparison was made to available similar international data. Small-bore tubes comprised 59/65 (91%) chest tube insertions and 23/25 (92%) complications. Available comparative data was limited. Ultrasound was used in 36% of insertions. Nearly half of chest drains placed for empyema required subsequent cardiothoracic surgical intervention. Chest drain complication rates at HVDHB were comparable to those seen internationally. Referral rates to cardiothoracic surgery for empyema were within described ranges. The importance of procedural training for junior medical staff, optimising safety of drain insertions with ultrasound guidance, and clear clinical governance for chest tube insertions are important in minimising harm from this procedure. Specialist societies need to take a leadership in providing guidance on chest drain insertions to secondary and tertiary hospitals in Australia and New Zealand.

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

2013-02-01

This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

GaN transistors on Si for switching and high-frequency applications

NASA Astrophysics Data System (ADS)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Composite fibrous glaucoma drainage implant

NASA Astrophysics Data System (ADS)

Klapstova, A.; Horakova, J.; Shynkarenko, A.; Lukas, D.

2017-10-01

Glaucoma is a frequent reason of loss vision. It is usually caused by increased intraocular pressure leading to damage of optic nerve head. This work deals with the development of fibrous structure suitable for glaucoma drainage implants (GDI). Commercially produced metallic glaucoma implants are very effective in lowering intraocular pressure. However, these implants may cause adverse events such as damage to adjacent tissue, fibrosis, hypotony or many others [1]. The aim of this study is to reduce undesirable properties of currently produced drains and improve their properties by creating of the composite fibrous drain for achieve a normal intraocular pressure. Two types of electrospinning technologies were used for the production of very small tubular implants. First type was focused for production of outer part of tubular drain and the second type of electrospinning method made the inner part of shape follows the connections of both parts. Complete implant had a special properties suitable for drainage of fluid. Morphological parameters, liquid transport tests and in-vitro cell adhesion tests were detected.

Community-based environmental management for malaria control: evidence from a small-scale intervention in Dar es Salaam, Tanzania.

PubMed

Castro, Marcia C; Tsuruta, Atsuko; Kanamori, Shogo; Kannady, Khadija; Mkude, Sixbert

2009-04-08

Historically, environmental management has brought important achievements in malaria control and overall improvements of health conditions. Currently, however, implementation is often considered not to be cost-effective. A community-based environmental management for malaria control was conducted in Dar es Salaam between 2005 and 2007. After community sensitization, two drains were cleaned followed by maintenance. This paper assessed the impact of the intervention on community awareness, prevalence of malaria infection, and Anopheles larval presence in drains. A survey was conducted in neighbourhoods adjacent to cleaned drains; for comparison, neighbourhoods adjacent to two drains treated with larvicides and two drains under no intervention were also surveyed. Data routinely collected by the Urban Malaria Control Programme were also used. Diverse impacts were evaluated through comparison of means, odds ratios (OR), logistic regression, and time trends calculated by moving averages. Individual awareness of health risks and intervention goals were significantly higher among sensitized neighbourhoods. A reduction in the odds of malaria infection during the post-cleaning period in intervention neighbourhoods was observed when compared to the pre-cleaning period (OR = 0.12, 95% CI 0.05-0.3, p < 0.001). During the post-cleaning period, a higher risk of infection (OR = 1.7, 95% CI 1.1-2.4, p = 0.0069) was observed in neighbourhoods under no intervention compared to intervention ones. Eighteen months after the initial cleaning, one of the drains was still clean due to continued maintenance efforts (it contained no waste materials and the water was flowing at normal velocity). A three-month moving average of the percentage of water habitats in that drain containing pupae and/or Anopheles larvae indicated a decline in larval density. In the other drain, lack of proper resources and local commitment limited success. Although environmental management was historically coordinated by authoritarian/colonial regimes or by industries/corporations, its successful implementation as part of an integrated vector management framework for malaria control under democratic governments can be possible if four conditions are observed: political will and commitment, community sensitization and participation, provision of financial resources for initial cleaning and structural repairs, and inter-sectoral collaboration. Such effort not only is expected to reduce malaria transmission, but has the potential to empower communities, improve health and environmental conditions, and ultimately contribute to poverty alleviation and sustainable development.

75 FR 16657 - Airworthiness Directives; Airbus Model A300 B2-1C, B2K-3C, B2-203, B4-2C, B4-103, and B4-203...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-02

... phasing inspections and magnetic plug inspections for metal particles on the drain plug using detailed... inspections and magnetic plug inspections for metal particles on the drain plug using detailed inspection..., but the magnetic plug inspection reveals metal particles with dimensions greater than 1.5 mm (0.059 in...

Advanced p-MOSFET Ionizing-Radiation Dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.

1994-01-01

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

Investigation of dielectric pocket induced variations in tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Upasana; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

2016-04-01

The performance of conventional Tunnel FETs struggling from ambipolar issues, insufficient on-current, lower transconductance value, higher delay and lower cut off frequency has been improved by introducing several material and device engineering concepts in past few years. Keeping this in view, another interesting and reliable option i.e. Dielectric Pocket TFET (featuring a dielectric pocket placement near tunneling junction) has been comprehensively and qualitatively demonstrated using ATLAS device simulator. The architecture has been explored in terms of various device electrostatic parameters such as potential, energy band profile, electron and hole concentration, electric field variation and band to band generation rate (GBTB) near the tunneling junction where the Dielectric Pocket (DP) has been introduced. Subsequently, a detailed investigation by changing the position and dielectric constant of pocket at respective junctions has been made where DP induced variations in drain current, transconductance and parasitic capacitance have been examined. The work highlights major improvements over conventional TFET in terms of lower subthreshold swing and threshold voltage, higher drain current and transconductance, improved on-to-off current ratio, suppressed ambipolar conduction and improved dynamic power dissipation issues for low voltage analog and digital applications.

Performance analysis of junctionless double gate VeSFET considering the effects of thermal variation - An explicit 2D analytical model

NASA Astrophysics Data System (ADS)

Chaudhary, Tarun; Khanna, Gargi

2017-03-01

The purpose of this paper is to explore junctionless double gate vertical slit field effect transistor (JLDG VeSFET) with reduced short channel effects and to develop an analytical threshold voltage model for the device considering the impact of thermal variations for the very first time. The model has been derived by solving 2D Poisson's equation and the effects of variation in temperature on various electrical parameters of the device such as Rout, drain current, mobility, subthreshold slope and DIBL has been studied and described in the paper. The model provides a deep physical insight of the device behavior and is also very helpful in contributing to the design space exploration for JLDG VeSFET. The proposed model is verified with simulative analysis at different radii of the device and it has been observed that there is a good agreement between the analytical model and simulation results.

Chemical fractionation of metals in wetland sediments: Indiana Dunes National Lakeshore.

PubMed

Dollar, N L; Souch, C J; Filippelli, G M; Mastalerz, M

2001-09-15

Tessier-type (1979) sequential extractions for heavy metals (Cd, Cr, Cu, Fe, Mn, Pb, and Zn) were conducted on sediments from two wetland sites, one inundated and the other drained, within the Indiana Dunes National Lakeshore (IDNL), NW Indiana, with the objective of (i) evaluating extraction techniques on organic-rich sediments, (ii) determining the geochemistry and mobility of potentially biotoxic trace metals in a contaminated environment, and (iii) considering the implications of different restoration strategies on the potential for heavy metal remobilization. Long and repeated extractions were needed to effectively degrade the organic-rich sediments (up to 75% of the sediment by mass). Analysis of sulfur fractionation revealed that it was predominantly sequestered along with the organically bound fraction (renamed oxidizable). Metal recovery was good with the sum of the extractant steps typically within 20% of the total metal concentration determined after total microwave digestion. Results showed metal fractionation to be both metal- and site-specific, The oxidizable fraction is dominant for Cu, Cr, and Fe (>65% of the nonresidual fraction for almost all samples) and overall is most important also for Cd and Pb. The iron/manganese oxide fraction is important for Pb, Mn, and Zn, particularly at the drained site. The carbonate bound fraction is relatively insignificant at both sites, except for Cd and Mn, although it is more important at the drained site. The exchangeable fraction is significant in the uppermost sediments at the drained site, particularly for Cd (3-24%), Pb (3-14%), and Zn (36-45%); whereas, for the inundated site, it ranged only from 0 to 1% Zn, with no detectable Cd or Pb. Chromium, Cu, and Fe exist in forms not likely to be remobilized, whereas Cd, Mn, Pb, and Zn are potentially mobile if drained wetland sites are reflooded (and pH and redox potential altered). Simple mass balance calculations illustrate the potential for the removal of approximately 84,375 kg of exchangeable Zn if currently drained sites across the IDNL are reflooded, with concentrations in water draining into Lake Michigan as high as 5 ppm.

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

PubMed Central

Martins, Jorge; Bahubalindruni, Pydi; Rovisco, Ana; Kiazadeh, Asal; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro

2017-01-01

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables. PMID:28773037

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits.

PubMed

Martins, Jorge; Bahubalindruni, Pydi; Rovisco, Ana; Kiazadeh, Asal; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro

2017-06-21

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.

Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry

NASA Astrophysics Data System (ADS)

Vishvakarma, S. K.; Beohar, Ankur; Vijayvargiya, Vikas; Trivedi, Priyal

2017-07-01

In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel field-effect transistor (TFET) has been made using distinct device geometry. Firstly, performance parameters of GAA-TFET are analyzed in terms of drain current, gate capacitances, transconductance, source-drain conductance at different radii and channel length. Furthermore, we also produce the geometrical analysis towards the optimized investigation of radio frequency parameters like cut-off frequency, maximum oscillation frequency and gain bandwidth product using a 3D technology computer-aided design ATLAS. Due to band-to-band tunneling based current mechanism unlike MOSFET, gate-bias dependence values as primary parameters of TFET differ. We also analyze that the maximum current occurs when radii of Si is around 8 nm due to high gate controllability over channel with reduced fringing effects and also there is no change in the current of TFET on varying its length from 100 to 40 nm. However current starts to increase when channel length is further reduced for 40 to 30 nm. Both of these trades-offs affect the RF performance of the device. Project supported by the Council of Scientific and Industrial Research (CSIR) Funded Research Project, Grant No. 22/0651/14/EMR-II, Government of India.

Can a bog drained for forestry be a stronger carbon sink than a natural bog forest?

NASA Astrophysics Data System (ADS)

Hommeltenberg, J.; Schmid, H. P.; Drösler, M.; Werle, P.

2014-07-01

This study compares the CO2 exchange of a natural bog forest, and of a bog drained for forestry in the pre-Alpine region of southern Germany. The sites are separated by only 10 km, they share the same soil formation history and are exposed to the same climate and weather conditions. In contrast, they differ in land use history: at the Schechenfilz site a natural bog-pine forest (Pinus mugo ssp. rotundata) grows on an undisturbed, about 5 m thick peat layer; at Mooseurach a planted spruce forest (Picea abies) grows on drained and degraded peat (3.4 m). The net ecosystem exchange of CO2 (NEE) at both sites has been investigated for 2 years (July 2010-June 2012), using the eddy covariance technique. Our results indicate that the drained, forested bog at Mooseurach is a much stronger carbon dioxide sink (-130 ± 31 and -300 ± 66 g C m-2 a-1 in the first and second year, respectively) than the natural bog forest at Schechenfilz (-53 ± 28 and -73 ± 38 g C m-2 a-1). The strong net CO2 uptake can be explained by the high gross primary productivity of the 44-year old spruces that over-compensates the two-times stronger ecosystem respiration at the drained site. The larger productivity of the spruces can be clearly attributed to the larger plant area index (PAI) of the spruce site. However, even though current flux measurements indicate strong CO2 uptake of the drained spruce forest, the site is a strong net CO2 source when the whole life-cycle since forest planting is considered. It is important to access this result in terms of the long-term biome balance. To do so, we used historical data to estimate the difference between carbon fixation by the spruces and the carbon loss from the peat due to drainage since forest planting. This rough estimate indicates a strong carbon release of +134 t C ha-1 within the last 44 years. Thus, the spruces would need to grow for another 100 years at about the current rate, to compensate the potential peat loss of the former years. In contrast, the natural bog-pine ecosystem has likely been a small but stable carbon sink for decades, which our results suggest is very robust regarding short-term changes of environmental factors.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

PubMed Central

Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-01-01

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm2·V−1·s−1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current–voltage and capacitance–voltage (C–V) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened. PMID:29621154

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawarada, H., E-mail: kawarada@waseda.jp; Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555; Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051

2014-07-07

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-Hmore » surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.« less

Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Chang; Liao, XueYang; Li, RuGuan

2015-09-28

In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Basedmore » on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.« less

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

Agricultural management explains historic changes in regional soil carbon stocks

PubMed Central

van Wesemael, Bas; Paustian, Keith; Meersmans, Jeroen; Goidts, Esther; Barancikova, Gabriela; Easter, Mark

2010-01-01

Agriculture is considered to be among the economic sectors having the greatest greenhouse gas mitigation potential, largely via soil organic carbon (SOC) sequestration. However, it remains a challenge to accurately quantify SOC stock changes at regional to national scales. SOC stock changes resulting from SOC inventory systems are only available for a few countries and the trends vary widely between studies. Process-based models can provide insight in the drivers of SOC changes, but accurate input data are currently not available at these spatial scales. Here we use measurements from a soil inventory dating from the 1960s and resampled in 2006 covering the major soil types and agricultural regions in Belgium together with region-specific land use and management data and a process-based model. The largest decreases in SOC stocks occurred in poorly drained grassland soils (clays and floodplain soils), consistent with drainage improvements since 1960. Large increases in SOC in well drained grassland soils appear to be a legacy effect of widespread conversion of cropland to grassland before 1960. SOC in cropland increased only in sandy lowland soils, driven by increasing manure additions. Modeled land use and management impacts accounted for more than 70% of the variation in observed SOC changes, and no bias could be demonstrated. There was no significant effect of climate trends since 1960 on observed SOC changes. SOC monitoring networks are being established in many countries. Our results demonstrate that detailed and long-term land management data are crucial to explain the observed SOC changes for such networks. PMID:20679194

Model framework for integrating multiple exposure pathways to chemicals in household cleaning products.

PubMed

Shin, H-M; McKone, T E; Bennett, D H

2017-07-01

We present a screening-level exposure-assessment method which integrates exposure from all plausible exposure pathways as a result of indoor residential use of cleaning products. The exposure pathways we considered are (i) exposure to a user during product use via inhalation and dermal, (ii) exposure to chemical residues left on clothing, (iii) exposure to all occupants from the portion released indoors during use via inhalation and dermal, and (iv) exposure to the general population due to down-the-drain disposal via inhalation and ingestion. We use consumer product volatilization models to account for the chemical fractions volatilized to air (f volatilized ) and disposed down the drain (f down-the-drain ) during product use. For each exposure pathway, we use a fate and exposure model to estimate intake rates (iR) in mg/kg/d. Overall, the contribution of the four exposure pathways to the total exposure varies by the type of cleaning activities and with chemical properties. By providing a more comprehensive exposure model and by capturing additional exposures from often-overlooked exposure pathways, our method allows us to compare the relative contribution of various exposure routes and could improve high-throughput exposure assessment for chemicals in cleaning products. © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Transport in a capacitive ultracold atomtronic circuit

NASA Astrophysics Data System (ADS)

Eller, Benjamin; Warren, Kayla; Eckel, Stephen; Clark, Charles; Edwards, Mark

2016-05-01

A recent NIST experiment studied the transport of a gaseous Bose-Einstein condensate (BEC) confined in an atomtronic ``dumbbell'' circuit. The optically created condensate potential consisted of a tight harmonic potential in the vertical direction confining the BEC to a horizontial plane. The horizontal potential consisted of two cylindrical wells separated by a channel produced by a harmonic oscillator potential transverse to the line joining the wells. The BEC, formed in the ``source'' well, was released to flow toward the ``drain'' well. We modeled this system with the Gross-Pitaevskii (GP) equation and found good agreement with the data provided that the channel potential is carefully reproduced. The GP simulations show behavior, not detectable in the experiment, that atoms can jump out of the dumbbell area after filling up the drain well. We describe the GP evolution of this system with a model RCL circuit having a time-dependent resistance. This resistance exhibits a strong connection to the time-dependence of the atom loss in the drain. We also studied and present the dependence of the R and L parameters of this model circuit on the channel shape. Supported by NSF Grant PHY-1413768 and ARO Atomtronics MURI.

Modeling of Current-Voltage Characteristics in Large Metal-Semiconducting Carbon Nanotube Systems

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Biegel, Bryon A. (Technical Monitor)

2000-01-01

A model is proposed for two observed current-voltage (I-V) patterns in recent experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 (1997)]. We claim that there are two contact modes for a tip (metal)-nanotube (semiconductor) junction depending whether the alignment of the metal and the semiconductor band structures is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this model to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor with metallic electrodes at low temperature [Zhou et al., Appl. Phys. Lett. 76, 1597 (2000)], and show that two independent metal-semiconductor junctions in series are responsible for the observed behavior.

Characterization of the efficiency of sedimentation basins downstream of harvested peat bogs

NASA Astrophysics Data System (ADS)

Samson-Do, Myriam; St-Hilaire, André

2015-04-01

Peat harvesting is a very lucrative industry in the provinces of Quebec and New-Brunswick (Canada). Peat enters in many potting mix used for horticulture. However, harvesting this resource has some impacts on the environment. First, industries need to drain the peat bog to dry the superficial layer. Then, it is harvested with industrial vacuums and the underlying layer is allowed to dry. The drained water is laden with suspended sediments (mostly organic peat fibers) that may affect biota of the stream where it is discharged. To counter the problem, this water does not go directly on the stream but first flows through a sedimentation basin, built to reduce suspended sediment loads. This work focuses on characterizing and eventually modeling the efficiency of those sedimentation basins. Seven basins were studied in Rivière-du-Loup, St-Valère and Escoumins (Quebec, Canada). They each have a different ratio basin area/drained area (4.7 10-4 to 20.3 10-4). To continuously monitor the sediment loads (calculated from sediment concentrations and discharge) entering and leaving basins, a nephelometer and a level logger were installed in the water column upstream and downstream of sedimentation basins. Their trapping efficiency was measured during the ice-free period (May to October) and for each significant rain event, since it is known that the rain and subsequent runoff induce most of the peat transport in and out of the basin. Results show that the event efficiency decreases as the basin is filled up with trapped sediments. For one basin, the efficiency was 85August. Trapping efficiency can be used as a tool to estimate basin dimensions. This has been done for municipal sedimentation ponds that trap minerals and will be adapted to the current context, where the dominant sediment is organic.

Calibration and Validation of the Precision Nitrogen Management Tool for Artificially Drained Fields Under Maize

NASA Astrophysics Data System (ADS)

Marjerison, R.; Hutson, J.; Melkonian, J.; van Es, H.; Sela, S.

2015-12-01

Organic and inorganic fertilizer additions to agricultural fields can lead to soil nitrogen (N) levels in excess of those required for optimal crop growth. The primary loss pathways for this excess N are leaching and denitrification. Nitrate leaching from agricultural sources contributes to the formation of hypoxic zones in critical estuarine systems including the Chesapeake Bay and Gulf of Mexico. Denitrification can lead to the production of nitrous oxide (N2O), a potent greenhouse gas. Agricultural practices such as controlling the timing and location of fertilizer application can help reduce these losses. The Precision Nitrogen Management (PNM) model was developed to simulate water transport, nitrogen transformations and transport, and crop growth and nutrient uptake from agricultural fields. The PNM model allows for the prediction of N losses under a variety of crop and management scenarios. Recent improvements to the model include the option to simulate artificially drained fields. The model performs well in simulating drainage and nitrate leaching when compared to measured data from field studies in artificially drained soils in New York and Minnesota. A simulated N budget was compared to available data. The improved model will be used to assess different management options for reducing N losses in maize production under different climate projections for key maize production locations/systems in the U.S.

Carbon balance of a fertile forestry-drained peatland in southern Finland

NASA Astrophysics Data System (ADS)

Lohila, Annalea; Korkiakoski, Mika; Tuovinen, Juha-Pekka; Minkkinen, Kari; Penttilä, Timo; Ojanen, Paavo; Launiainen, Samuli; Laurila, Tuomas

2016-04-01

Forestry on peatlands is a significant land use form and has been economically important during the last decades particularly in the Nordic countries. While nutrient-poor forests are generally able to maintain their carbon sink status even after drainage, the peat soil at the fertile sites is typically considered as a large carbon dioxide (CO2) source. This means that despite of high timber production capacity, the fertile peatland forests gradually lose their peat carbon store. In addition, many of the nutrient-rich sites emit considerable amount of nitrous oxide (N2O) into the atmosphere. While the current estimates of the greenhouse gas (GHG) balance of forestry-drained peatlands are largely based on soil inventories or on data combining soil GHG fluxes and tree growth litter input measurements and modelling, only few studies have utilized the high-resolution, continuous eddy covariance (EC) data to address the short-term dynamics of the net CO2 fluxes covering both the soil, forest floor vegetation and the trees. Hence, little is known about the factors which control the year-to-year variation in fluxes. Here we present a 5-year dataset of CO2 fluxes measured with the EC method above a nutrient-rich forestry-drained peatland in southern Finland. The site, drained in the beginning of 1970's, is a well growing pine forest with some spruces and birches, the tree volume and carbon fixation rate equaling 8.0 kg C m-2 and 0.273 kg C m-2 yr-1, respectively. The average summer-time water level depth is -50 cm. By combining the gap-filled half-hourly net ecosystem exchange (NEE) data, the tree growth measurements, and the measurements on dissolved organic carbon (DOC) losses and soil methane (CH4) exchange, we will in this presentation estimate the total annual loss of peat carbon of this fertile peatland forest. In addition, using the N2O flux data we will estimate the contribution of different gases to the total GHG balance. Factors controlling the carbon balance and its seasonal and inter-annual variation are discussed.

Comparisons of single event vulnerability of GaAs SRAMS

NASA Astrophysics Data System (ADS)

Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

1986-12-01

A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

Explicit Simulation of Networks of Outlet Glaciers to Constrain Greenland's Sea Level Contribution

NASA Astrophysics Data System (ADS)

Ultee, E.; Bassis, J. N.

2017-12-01

Ice from the Greenland Ice Sheet drains to the ocean through hundreds of outlet glaciers, many of which are too small to be accurately resolved in continental-scale ice sheet models. Moreover, despite the fact that dynamic changes in Greenland outlet glaciers are currently responsible for about half of the ice sheet's contribution to global sea level, all but the largest are often excluded from major sea level assessments. We have previously developed and validated a simple model that simulates advance and retreat of networks of marine-terminating glaciers based on the perfect plastic approximation. Here we apply this model to a selection of forcing scenarios, representing both climate persistence and extreme scenarios, to constrain changes in calving flux from the most significant Greenland outlet glaciers. Our model can be implemented in standalone mode or as the calving module in a more sophisticated large-scale model, providing constraints on Greenland's future contribution to global sea level rise under a range of scenarios.

Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons

NASA Astrophysics Data System (ADS)

Majidi, Danial; Faez, Rahim

2017-02-01

In this paper, using first principle calculation and non-equilibrium Green's function, the thermally induced spin current in Hydrogen terminated Zigzag-edge Germanene Nanoribbon (ZGeNR-H) is investigated. In this model, because of the difference between the source and the drain temperature of ZGeNR device, the spin up and spin down currents flow in the opposite direction with two different threshold temperatures (Tth). Hence, a pure spin polarized current which belongs to spin down is obtained. It is shown that, for temperatures above the threshold temperature spin down current increases with the increasing temperature up to 75 K and then decreases. But spin up current rises steadily and in the high temperature we can obtain polarized spin up current. In addition, we show an acceptable spin current around the room temperature for ZGeNR. The transmission peaks in ZGeNR which are closer to the Fermi level rather than Zigzag Graphene Nanoribbon (ZGNRS) which causes ZGeNR to have spin current at higher temperatures. Finally, it is indicated that by tuning the back gate voltage, the spin current can be completely modulated and polarized. Simulation results verify the Zigzag Germanene Nanoribbon as a promising candidate for spin caloritronics devices, which can be applied in future low power consumption technology.

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Oil system drains. 23.1021 Section 23.1021 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Oil system drains. 23.1021 Section 23.1021 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

A prospective randomized study of use of drain versus no drain after burr-hole evacuation of chronic subdural hematoma.

PubMed

Singh, Amit Kumar; Suryanarayanan, Bhaskar; Choudhary, Ajay; Prasad, Akhila; Singh, Sachin; Gupta, Laxmi Narayan

2014-01-01

Chronic subdural hematoma (CSDH) recurs after surgical evacuation in 5-30% of patients. Inserting subdural drain might reduce the recurrence rate, but is not commonly practiced. There are few prospective studies to evaluate the effect of subdural drains. A prospective randomized study to investigate the effect of subdural drains in the on recurrence rates and clinical outcome following burr-hole drainage (BHD) of CSDH was undertaken. During the study period, 246 patients with CSDH were assessed for eligibility. Among 200 patients fulfilling the eligibility criteria, 100 each were assigned to "drain group" (drain inserted into the subdural space following BHD) and "without drain group" (subdural drain was not inserted following BHD) using random allocation software. The primary end point was recurrence needing re-drainage up to a period of 6 months from surgery. Recurrence occurred in 9 of 100 patients with a drain, and 26 of 100 patients in without drain group (P = 0.002). The mortality was 5% in patients with drain and 4% in patients without drain group (P = 0.744). The medical and surgical complications were comparable between the two study groups. Use of a subdural drain after burr-hole evacuation of a CSDH reduces the recurrence rate and is not associated with increased complications.

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

PubMed

Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

2014-04-18

We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Engineering Nanowire n-MOSFETs at L_{g}<8 nm

NASA Astrophysics Data System (ADS)

Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

2013-07-01

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

Chest drainage systems in use

PubMed Central

Zisis, Charalambos; Tsirgogianni, Katerina; Lazaridis, George; Lampaki, Sofia; Baka, Sofia; Mpoukovinas, Ioannis; Karavasilis, Vasilis; Kioumis, Ioannis; Pitsiou, Georgia; Katsikogiannis, Nikolaos; Tsakiridis, Kosmas; Rapti, Aggeliki; Trakada, Georgia; Karapantzos, Ilias; Karapantzou, Chrysanthi; Zissimopoulos, Athanasios; Zarogoulidis, Konstantinos

2015-01-01

A chest tube is a flexible plastic tube that is inserted through the chest wall and into the pleural space or mediastinum. It is used to remove air in the case of pneumothorax or fluid such as in the case of pleural effusion, blood, chyle, or pus when empyema occurs from the intrathoracic space. It is also known as a Bülau drain or an intercostal catheter. Insertion of chest tubes is widely performed by radiologists, pulmonary physicians and thoracic surgeons. Large catheters or small catheters are used based on each situation that the medical doctor encounters. In the current review we will focus on the chest drain systems that are in use. PMID:25815304

A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

PubMed Central

Aiello, Orazio; Fiori, Franco

2013-01-01

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor. PMID:23385408

THE URBAN STREAM SYNDROME: CURRENT KNOWLEDGE AND THE SEARCH FOR A CURE

EPA Science Inventory

The term "urban stream syndrome" describes the consistently observed ecological degradation of streams draining urban land. This paper reviews recent literature to describe symptoms of the syndrome, explores mechanisms driving the syndrome, and identifies appropriate goals and me...

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

NASA Astrophysics Data System (ADS)

Cazimajou, T.; Legallais, M.; Mouis, M.; Ternon, C.; Salem, B.; Ghibaudo, G.

2018-05-01

We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in back-gated transistor mode, for future use as gas or biosensors. These devices featured P-type field-effect characteristics. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as apparent low field mobility, threshold voltage and subthreshold slope ideality factor. Their variation with channel length and nanowire density was related to the change of conduction regime from direct source/drain connection by parallel nanowires to percolating channels. Experimental results could be related in part to an influence of the threshold voltage dispersion of individual nanowires.

Characterization and modeling of radiation effects NASA/MSFC semiconductor devices

NASA Technical Reports Server (NTRS)

Kerns, D. V., Jr.; Cook, K. B., Jr.

1978-01-01

A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 23.1021 Section 23.1021... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Powerplant Oil System § 23.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 29.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 29.1021 Section 29.1021... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Oil System § 29.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 27.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 27.1021 Section 27.1021... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Oil System § 27.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible; and (b...

14 CFR 25.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 25.1021 Section 25.1021... STANDARDS: TRANSPORT CATEGORY AIRPLANES Powerplant Oil System § 25.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 25.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 25.1021 Section 25.1021... STANDARDS: TRANSPORT CATEGORY AIRPLANES Powerplant Oil System § 25.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 23.1021 Section 23.1021... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Powerplant Oil System § 23.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 29.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 29.1021 Section 29.1021... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Oil System § 29.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 27.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 27.1021 Section 27.1021... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Oil System § 27.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible; and (b...

2D Quantum Transport Modeling in Nanoscale MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Sediment dispersal in the northwestern Adriatic Sea

USGS Publications Warehouse

Harris, C.K.; Sherwood, C.R.; Signell, R.P.; Bever, A.J.; Warner, J.C.

2008-01-01

Sediment dispersal in the Adriatic Sea was evaluated using coupled three-dimensional circulation and sediment transport models, representing conditions from autumn 2002 through spring 2003. The calculations accounted for fluvial sources, resuspension by waves and currents, and suspended transport. Sediment fluxes peaked during southwestward Bora wind conditions that produced energetic waves and strengthened the Western Adriatic Coastal Current. Transport along the western Adriatic continental shelf was nearly always to the south, except during brief periods when northward Sirocco winds reduced the coastal current. Much of the modeled fluvial sediment deposition was near river mouths, such as the Po subaqueous delta. Nearly all Po sediment remained in the northern Adriatic. Material from rivers that drain the Apennine Mountains traveled farther before deposition than Po sediment, because it was modeled with a lower settling velocity. Fluvial sediment delivered to areas with high average bed shear stress was more highly dispersed than material delivered to more quiescent areas. Modeled depositional patterns were similar to observed patterns that have developed over longer timescales. Specifically, modeled Po sediment accumulation was thickest near the river mouth with a very thin deposit extending to the northeast, consistent with patterns of modern sediment texture in the northern Adriatic. Sediment resuspended from the bed and delivered by Apennine Rivers was preferentially deposited on the northern side of the Gargano Peninsula, in the location of thick Holocene accumulation. Deposition here was highest during Bora winds when convergences in current velocities and off-shelf flux enhanced delivery of material to the midshelf. Copyright 2008 by the American Geophysical Union.

Modeling Leptospirosis in Trinidad, West Indies: A Waterborne Zoonosis of Increasing Public Health Importance

NASA Astrophysics Data System (ADS)

Vega, M. C.; Opadeyi, J.

2012-12-01

Leptospirosis is a waterborne disease which is considered one of the most common and widely spread bacterial zoonosis and a growing global public health problem. Transmission in humans is caused by direct or indirect contact with contaminated water, soil or infected urine, blood or tissue of carrier animals. Because of the similarity with influenza, dengue and viral hepatitis symptoms it is often misdiagnosed with these diseases, but as the leptospirosis progresses, internal organs can be compromised, causing severe syndromes (e.g. Weil's disease), and potentially can cause death. In less developed countries, leptospirosis is often poorly recognized. In humid tropics and subtropics, where this disease has a high impact, climatic and environmental factors, such as rainfall, floods, land cover and their modifications have been frequently related to the occurrence of leptospirosis. In these regions one of the main problems for the study of the role of environmental factors on disease dynamics is the lack of accurate data since, in many cases, data are either unavailable or do not exist at all. Between 1980 and 2005 a total of 12,475 cases of leptospirosis were reported from all Caribbean countries, with 2,370 (19%) of these corresponding to Trinidad and Tobago, where the current average annual incidence rate is 1.84 per 100,000 population based on confirmed cases. In order to explore the underlying spatial variability of leptospirosis occurrence as related to environmental and socio-economic factors, a series of Geographically Weighted Regression (GWR) models were developed. GWR was used to examine the determinants of leptospirosis in the communities of Trinidad using a total of 1,549 reported cases and 250 confirmed cases from 1998 to 2008. MODIS satellite imagery and GIS analysis were used to develop a series of covariables for each community including land cover, vegetation indices, wetness index (ln (α/tanβ)), river length per Ha, topography, percentage of free draining soils, percentage of imperfectly draining soils, percentage of impeded draining soils and mean annual rainfall. These covariables together with socio-economic data were used to set up the GWR models. Local model correlation (R^{2}) was 0.78, higher than the global correlation of 0.58 and there was found to be a clear spatial correlation between covariables and leptospirosis cases. Percentage of draining soils and topography were found to be significant (p<0.01 and 0.00) indicating spatial variability in the influence of these factors on the occurrence of leptospirosis in Trinidad communities. Composition of the soils and their lack of drainage may be an important factor influencing leptospirosis occurrence. Leptospires do not have a waterproof membrane therefore for their survival they must remain submersed in water. Previous studies have found leptospires to be associated with soils of high moisture and organic matter content.

Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

NASA Astrophysics Data System (ADS)

Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

2016-09-01

In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

Electrothermal DC characterization of GaN on Si MOS-HEMTs

NASA Astrophysics Data System (ADS)

Rodríguez, R.; González, B.; García, J.; Núñez, A.

2017-11-01

DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

Transverse tripolar spinal cord stimulation: theoretical performance of a dual channel system.

PubMed

Struijk, J J; Holsheimer, J

1996-07-01

A new approach to spinal cord stimulation is presented, by which several serious problems of conventional methods can be solved. A transverse tripolar electrode with a dual-channel voltage stimulator is evaluated theoretically by means of a volume conductor model, combined with nerve fibre models. The simulations predict that a high degree of freedom in the control of activation of dorsal spinal pathways may be obtained with the described system. This implies an easier control of paraesthesia coverage of skin areas and the possibility to correct undesired paraesthesia patterns, caused by lead migration, tissue growth, or anatomical asymmetries, for example, without surgical intervention. It will also be possible to preferentially activate either dorsal column or dorsal root fibres, which has some important clinical advantages. Compared to conventional stimulation systems, the new system has a relatively high current drain.

A "Stratospheric Drain" over the Maritime Continent

NASA Technical Reports Server (NTRS)

Sherwood, Steve

1999-01-01

Evidence is presented from operational rawinsonde data surrounding the maritime continent that the net mass flux near the tropopause is downward over this region, contrary to the behavior of current numerical models. The air is descending year-round, despite mean upward motion below and above the descending layer. This sinking implies the existence of a significant energy-removing process, which is argued to be the injection of cold air by overshooting convective clouds. The mass, energy, and horizontal momentum budgets are examined in reaching these conclusions. The implied cooling effect of convective overshoots can be simulated with a simple, parcel-sorting convective mixing model. The findings contradict the common view that the mean flow enters the stratosphere in this strongly-convecting region, and have important implications for transport of water vapor and other gases into the stratosphere.

Experiments of draining and filling processes in a collapsible tube at high external pressure

NASA Astrophysics Data System (ADS)

Flaud, P.; Guesdon, P.; Fullana, J.-M.

2012-02-01

The venous circulation in the lower limb is mainly controlled by the muscular action of the calf. To study the mechanisms governing the venous draining and filling process in such a situation, an experimental setup, composed by a collapsible tube under external pressure, has been built. A valve preventing back flows is inserted at the bottom of the tube and allows to model two different configurations: physiological when the fluid flow is uni-directional and pathological when the fluid flows in both directions. Pressure and flow rate measurements are carried out at the inlet and outlet of the tube and an original optical device with three cameras is proposed to measure the instantaneous cross-sectional area. The experimental results (draining and filling with physiological or pathological valves) are confronted to a simple one-dimensional numerical model which completes the physical interpretation. One major observation is that the muscular contraction induces a fast emptying phase followed by a slow one controlled by viscous effects, and that a defect of the valve decreases, as expected, the ejected volume.

Description and spatial inference of soil drainage using matrix soil colours in the Lower Hunter Valley, New South Wales, Australia

PubMed Central

McBratney, Alex B.; Minasny, Budiman

2018-01-01

Soil colour is often used as a general purpose indicator of internal soil drainage. In this study we developed a necessarily simple model of soil drainage which combines the tacit knowledge of the soil surveyor with observed matrix soil colour descriptions. From built up knowledge of the soils in our Lower Hunter Valley, New South Wales study area, the sequence of well-draining → imperfectly draining → poorly draining soils generally follows the colour sequence of red → brown → yellow → grey → black soil matrix colours. For each soil profile, soil drainage is estimated somewhere on a continuous index of between 5 (very well drained) and 1 (very poorly drained) based on the proximity or similarity to reference soil colours of the soil drainage colour sequence. The estimation of drainage index at each profile incorporates the whole-profile descriptions of soil colour where necessary, and is weighted such that observation of soil colour at depth and/or dominantly observed horizons are given more preference than observations near the soil surface. The soil drainage index, by definition disregards surficial soil horizons and consolidated and semi-consolidated parent materials. With the view to understanding the spatial distribution of soil drainage we digitally mapped the index across our study area. Spatial inference of the drainage index was made using Cubist regression tree model combined with residual kriging. Environmental covariates for deterministic inference were principally terrain variables derived from a digital elevation model. Pearson’s correlation coefficients indicated the variables most strongly correlated with soil drainage were topographic wetness index (−0.34), mid-slope position (−0.29), multi-resolution valley bottom flatness index (−0.29) and vertical distance to channel network (VDCN) (0.26). From the regression tree modelling, two linear models of soil drainage were derived. The partitioning of models was based upon threshold criteria of VDCN. Validation of the regression kriging model using a withheld dataset resulted in a root mean square error of 0.90 soil drainage index units. Concordance between observations and predictions was 0.49. Given the scale of mapping, and inherent subjectivity of soil colour description, these results are acceptable. Furthermore, the spatial distribution of soil drainage predicted in our study area is attuned with our mental model developed over successive field surveys. Our approach, while exclusively calibrated for the conditions observed in our study area, can be generalised once the unique soil colour and soil drainage relationship is expertly defined for an area or region in question. With such rules established, the quantitative components of the method would remain unchanged. PMID:29682425

Description and spatial inference of soil drainage using matrix soil colours in the Lower Hunter Valley, New South Wales, Australia.

PubMed

Malone, Brendan P; McBratney, Alex B; Minasny, Budiman

2018-01-01

Soil colour is often used as a general purpose indicator of internal soil drainage. In this study we developed a necessarily simple model of soil drainage which combines the tacit knowledge of the soil surveyor with observed matrix soil colour descriptions. From built up knowledge of the soils in our Lower Hunter Valley, New South Wales study area, the sequence of well-draining → imperfectly draining → poorly draining soils generally follows the colour sequence of red → brown → yellow → grey → black soil matrix colours. For each soil profile, soil drainage is estimated somewhere on a continuous index of between 5 (very well drained) and 1 (very poorly drained) based on the proximity or similarity to reference soil colours of the soil drainage colour sequence. The estimation of drainage index at each profile incorporates the whole-profile descriptions of soil colour where necessary, and is weighted such that observation of soil colour at depth and/or dominantly observed horizons are given more preference than observations near the soil surface. The soil drainage index, by definition disregards surficial soil horizons and consolidated and semi-consolidated parent materials. With the view to understanding the spatial distribution of soil drainage we digitally mapped the index across our study area. Spatial inference of the drainage index was made using Cubist regression tree model combined with residual kriging. Environmental covariates for deterministic inference were principally terrain variables derived from a digital elevation model. Pearson's correlation coefficients indicated the variables most strongly correlated with soil drainage were topographic wetness index (-0.34), mid-slope position (-0.29), multi-resolution valley bottom flatness index (-0.29) and vertical distance to channel network (VDCN) (0.26). From the regression tree modelling, two linear models of soil drainage were derived. The partitioning of models was based upon threshold criteria of VDCN. Validation of the regression kriging model using a withheld dataset resulted in a root mean square error of 0.90 soil drainage index units. Concordance between observations and predictions was 0.49. Given the scale of mapping, and inherent subjectivity of soil colour description, these results are acceptable. Furthermore, the spatial distribution of soil drainage predicted in our study area is attuned with our mental model developed over successive field surveys. Our approach, while exclusively calibrated for the conditions observed in our study area, can be generalised once the unique soil colour and soil drainage relationship is expertly defined for an area or region in question. With such rules established, the quantitative components of the method would remain unchanged.

Timing of Re-Transfusion Drain Removal Following Total Knee Replacement

PubMed Central

Leeman, MF; Costa, ML; Costello, E; Edwards, D

2006-01-01

INTRODUCTION The use of postoperative drains following total knee replacement (TKR) has recently been modified by the use of re-transfusion drains. The aim of our study was to investigate the optimal time for removal of re-transfusion drains following TKR. PATIENTS AND METHODS The medical records of 66 patients who had a TKR performed between October 2003 and October 2004 were reviewed; blood drained before 6 h and the total volume of blood drained was recorded. RESULTS A total of 56 patients had complete records of postoperative drainage. The mean volume of blood collected in the drain in the first 6 h was 442 ml. The mean total volume of blood in the drain was 595 ml. Therefore, of the blood drained, 78% was available for transfusion. CONCLUSION Re-transfusion drains should be removed after 6 h, when no further re-transfusion is permissible. PMID:16551400

A Brief History of Two Common Surgical Drains.

PubMed

Meyerson, Joseph M

2016-01-01

The use of surgical drains is commonplace in all types of surgical procedures, and rarely do we take the time to contemplate or investigate the origins of these critical devices. Every surgeon should be familiar with the Jackson-Pratt drain and Blake drain, 2 of the most frequently used closed suction, negative-pressure drainage devices in surgery. These drains are used throughout the body in a wide variety of surgical procedures. The development and differences between these 2 devices are seldom known by the practicing surgeon. In this article, we delve into the ancient history of drains, the creation and alterations of the closed suction, negative-pressure drain that paved the way for the Jackson-Pratt and Blake drain. Finally, we will discuss the variety of reservoirs that attach to these drains and the origin of the well-known adage of when to pull a drain.

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

NASA Astrophysics Data System (ADS)

Pearton, S. J.; Kang, B. S.; Kim, Suku; Ren, F.; Gila, B. P.; Abernathy, C. R.; Lin, Jenshan; Chu, S. N. G.

2004-07-01

There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to central monitoring locations. We discuss the advances in use of GaN-based solid-state sensors for these applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization-induced two-dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors to detect gases, polar liquids and mechanical pressure. AlGaN/GaN HEMT structures have been demonstrated to exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. Pt-gated GaN Schottky diodes and Sc2O3/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H2. Of particular interest is detection of ethylene (C2H4), which has strong double bonds and hence is difficult to dissociate at modest temperatures. Apart from combustion gas sensing, the AlGaN/GaN heterostructure devices can be used as sensitive detectors of pressure changes. In addition, large changes in source-drain current of the AlGaN/GaN HEMT sensors can be detected upon adsorption of biological species on the semiconductor surface. Finally, the nitrides provide an ideal platform for fabrication of surface acoustic wave (SAW) devices. The GaN-based devices thus appear promising for a wide range of chemical, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications. In addition, the sensors are compatible with high bit-rate wireless communication systems that facilitate their use in remote arrays.

Advances in electrometer vacuum tube design

NASA Technical Reports Server (NTRS)

1970-01-01

Single-ended, miniature-cathode tube with a relatively low grid current level is constructed. Adequate cathode temperature at relatively low heater power drain is provided by designing the supporting spacers to provide a square cathode hole. Method of assembling the mount and bonding the elements is discussed.

Usefulness of high-resolution 3D multifusion medical imaging for preoperative planning in patients with posterior fossa hemangioblastoma: technical note.

PubMed

Yoshino, Masanori; Nakatomi, Hirofumi; Kin, Taichi; Saito, Toki; Shono, Naoyuki; Nomura, Seiji; Nakagawa, Daichi; Takayanagi, Shunsaku; Imai, Hideaki; Oyama, Hiroshi; Saito, Nobuhito

2017-07-01

Successful resection of hemangioblastoma depends on preoperative assessment of the precise locations of feeding arteries and draining veins. Simultaneous 3D visualization of feeding arteries, draining veins, and surrounding structures is needed. The present study evaluated the usefulness of high-resolution 3D multifusion medical imaging (hr-3DMMI) for preoperative planning of hemangioblastoma. The hr-3DMMI combined MRI, MR angiography, thin-slice CT, and 3D rotated angiography. Surface rendering was mainly used for the creation of hr-3DMMI using multiple thresholds to create 3D models, and processing took approximately 3-5 hours. This hr-3DMMI technique was used in 5 patients for preoperative planning and the imaging findings were compared with the operative findings. Hr-3DMMI could simulate the whole 3D tumor as a unique sphere and show the precise penetration points of both feeding arteries and draining veins with the same spatial relationships as the original tumor. All feeding arteries and draining veins were found intraoperatively at the same position as estimated preoperatively, and were occluded as planned preoperatively. This hr-3DMMI technique could demonstrate the precise locations of feeding arteries and draining veins preoperatively and estimate the appropriate route for resection of the tumor. Hr-3DMMI is expected to be a very useful support tool for surgery of hemangioblastoma.

High performance multi-finger MOSFET on SOI for RF amplifiers

NASA Astrophysics Data System (ADS)

Adhikari, M. Singh; Singh, Y.

2017-10-01

In this paper, we propose structural modifications in the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon-on-insulator by utilizing trenches in the epitaxial layer. The proposed multi-finger MOSFET (MF-MOSFET) has dual vertical-gates placed in separate trenches to form multiple channels in the p-base which carry the drain current in parallel. The proposed device uses TaN as gate electrode and SiO2 as gate dielectric. Simultaneous conduction of multiple channels enhances the drain current (ID) and provides higher transconductance (gm) leading to significant improvement in cut-off frequency (ft). Two-dimensional simulations are performed to evaluate and compare the performance of the MF-MOSFET with the conventional MOSFET. At a gate length of 60 nm, the proposed device provides 4 times higher ID, 3 times improvement in gm and 1.25 times increase in ft with better control over the short channel effects as compared with the conventional device.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

NASA Astrophysics Data System (ADS)

Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong

2018-05-01

Gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 110 nm and 220 nm, respectively. The gate recess was formed by dry plasma etching with Cr metal as the mask. The fabricated devices with a 25-nm HfO2 gate dielectric both showed a low off-state drain current of about 1.8 × 10-10 A/mm. The effects of recess depth on the electronic characteristics of Ga2O3 MOSFETs were investigated. Upon increasing the recess depth from 110 nm to 220 nm, the saturated drain current decreased from 20.7 mA/mm to 2.6 mA/mm, while the threshold voltage moved increased to +3 V. Moreover, the breakdown voltage increased from 122 V to 190 V. This is mainly because the inverted-trapezoidal gate played the role of a gate-field plate, which suppressed the peak electric field close to the gate.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

NASA Astrophysics Data System (ADS)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Solute load concentrations in some streams in the Upper Osun and Owena drainage basins, central western Nigeria

NASA Astrophysics Data System (ADS)

Jeje, L. K.; Ogunkoya, O. O.; Oluwatimilehin, J. M.

1999-12-01

The solute load dynamics of 12 third-order streams in central western Nigeria are presented, during storm and non-storm runoff events. The relevance of the Walling and Foster model for explaining storm period solute load dynamics in the humid tropical environment was assessed and it was found that this model was generally applicable to the study area. Exceptions appear to be streams draining settlements and/or farms where fertilizers are applied heavily. The solute load ranged from 5 mg l -1 to 580 mg l -1 with streams draining basins with tree-crop plantations ( Theobroma cacao, Cola sp.) as the dominant land cover having the highest solute load.

A study of the complications of small bore 'Seldinger' intercostal chest drains.

PubMed

Davies, Helen E; Merchant, Shairoz; McGown, Anne

2008-06-01

Use of small bore chest drains (<14F), inserted via the Seldinger technique, has increased globally over the last few years. They are now used as first line interventions in most acute medical situations when thoracostomy is required. Limited data are available on the associated complications. In this study, the frequency of complications associated with 12F chest drains, inserted using the Seldinger technique, was quantified. A retrospective case note audit was performed of consecutive patients requiring pleural drainage over a 12-month period. One hundred consecutive small bore Seldinger (12F) chest drain insertions were evaluated. Few serious complications occurred. However, 21% of the chest drains were displaced ('fell out') and 9% of the drains became blocked. This contributed to high morbidity rates, with 13% of patients requiring repeat pleural procedures. The frequency of drain blockage in pleural effusion was reduced by administration of regular normal saline drain flushes (odds ratio for blockage in flushed drains compared with non-flushed drains 0.04, 95% CI: 0.01-0.37, P < 0.001). Regular chest drain flushes are advocated in order to reduce rates of drain blockage, and further studies are needed to determine optimal fixation strategies that may reduce associated patient morbidity.

Comparison of a large and small-calibre tube drain for managing spontaneous pneumothoraces.

PubMed

Benton, Ian J; Benfield, Grant F A

2009-10-01

To compare treatment success of large- and small-bore chest drains in the treatment of spontaneous pneumothoraces the case-notes were reviewed of those admitted to our hospital with a total of 73 pneumothoraces and who were treated by trainee doctors of varying experience. Both a large- and a small-bore intercostal tube drain system were in use during the two-year period reviewed. Similar pneumothorax profile and numbers treated with both drains were recorded, resulting in a similar drain time and numbers of successful and failed re-expansion of pneumothoraces. Successful pneumothorax resolution was the same for both drain types and the negligible tube drain complications observed with the small-bore drain reflected previously reported experiences. However the large-bore drain was associated with a high complication rate (32%) with more infectious complications (24%). The small-bore drain was prone to displacement (21%). There was generally no evidence of an increased failure and morbidity, reflecting poorer expertise, in the non-specialist trainees managing the pneumothoraces. A practical finding however was that in those large pneumothoraces where re-expansion failed, the tip of the drain had not been sited at the apex of the pleural cavity irrespective of the drain type inserted.

Investigation of the effects of slow-release fertilizer and struvite in biodegradation in filter drains and potential application of treated water in irrigation of road verges.

PubMed

Theophilus, Stephen C; Mbanaso, Fredrick U; Nnadi, Ernest O; Onyedeke, Kingsley T

2017-11-14

Filter drains are usually laid along the margins of highways. Highway runoffs are polluted with hydrocarbons and high levels of total dissolved solids. Therefore, effective pollution removal mechanism is necessary in order to avoid contamination of surrounding soils and groundwater. Biodegradation is amongst pollution removal mechanisms in filter drains, but it is a relatively slow process which is dependent on wide range of factors including the type of pollutant and availability of nutrients. This paper reports on a study conducted to investigate the impact of slow-release fertilizer and struvite in enhancement of biodegradation of hydrocarbon in filter drains. Filter drain models incorporated with geotextile were challenged with cumulative oil loading of 178 mg/m 2 /week with a view to comparing the efficiency of these two nutrient sources under high oil pollution loading and realistic rainfall conditions of 13 mm/week. Nutrients and street dust were applied at one-off rate of 17 g/m 2 and 1.55 g/rig to provide nutrient enhancement and simulate field conditions respectively. The impact of the nutrients was studied by monitoring bacterial and fungal growth using nutrient agar, Rose Bengal Agar media and CO2 evolution. EC, pH, heavy metals, TPH, elemental analysis and SAR were used to investigate water quality of effluent of filter drains for potential application as irrigation fluid for trees and flowers planted on road verges. The results show that nutrient application encouraged microbial activities and enhanced biodegradation rates with differences in type of nutrient applied. Also, it was observed that incorporation of geotextiles in filter drains improved pollution retention efficiency and there is a potential opportunity for utilization of struvite in SuDS systems as sustainable nutrient source.

A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

NASA Astrophysics Data System (ADS)

Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

2018-05-01

In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

NASA Astrophysics Data System (ADS)

Liu, Xiangyu; Hu, Huiyong; Wang, Bin; Wang, Meng; Han, Genquan; Cui, Shimin; Zhang, Heming

2017-02-01

In this paper, a novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The simulation results show that Ion = 5.5 × 10-5A/μm is achieved. The junctionless device structure enhances Ion effectively and increases the region where significant BTBT occurs, comparing with the normal Ge-nTEFT. The impact of the lightly doped drain (LDD) region is investigated. A comparison of Ion and Ioff of the junctionless Ge n-TFET with different channel doping concentration ND and LDD doping concentration NLDD is studied. Ioff is reduced 1 order of magnitude with the optimized ND and NLDD are 1 × 1018cm-3 and 1 × 1017 cm-3, respectively. To reduce the gate induced drain leakage (GIDL) current, the impact of the sloped gate oxide structure is also studied. By employing the sloped gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved at Ion = 4.05 × 10-5A/μm and Ion/Ioff = 5.7 × 106.

Evaluation of Impact Damage to the Burster Detonation Vessel Caused by Fragments from a Drained M121A1 Chemical Munition Detonated with an Initiation Charge

DOE Office of Scientific and Technical Information (OSTI.GOV)

KIPP, MARLIN E.

2001-12-01

Explosive charges placed on the fuze end of a drained chemical munition are expected to be used as a means to destroy the fuze and burster charges of the munition. Analyses are presented to evaluate the effect of these additional initiation charges on the fragmentation characteristics for the M121A1 155mm chemical munition, modeled with a T244 fuze attached, and to assess the consequences of these fragment impacts on the walls of a containment chamber--the Burster Detonation Vessel. A numerical shock physics code (CTH) is used to characterize the mass and velocity of munition fragments. Both two- and three-dimensional simulations ofmore » the munition have been completed in this study. Based on threshold fragment velocity/mass results drawn from both previous and current analyses, it is determined that under all fragment impact conditions from the munition configurations considered in this study, no perforation of the inner chamber wall will occur, and the integrity of the Burster Detonation Vessel is retained. However, the munition case fragments have sufficient mass and velocity to locally damage the surface of the inner wall of the containment vessel.« less

Reservoir fracture mapping using microearthquakes: Austin chalk, Giddings field, TX and 76 field, Clinton Co., KY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phillips, W.S.; Rutledge, J.T.; Gardner, T.L.

1996-11-01

Patterns of microearthquakes detected downhole defined fracture orientation and extent in the Austin chalk, Giddings field, TX and the 76 field, Clinton Co., KY. We collected over 480 and 770 microearthquakes during hydraulic stimulation at two sites in the Austin chalk, and over 3200 during primary production in Clinton Co. Data were of high enough quality that 20%, 31% and 53% of the events could be located, respectively. Reflected waves constrained microearthquakes to the stimulated depths at the base of the Austin chalk. In plan view, microearthquakes defined elongate fracture zones extending from the stimulation wells parallel to the regionalmore » fracture trend. However, widths of the stimulated zones differed by a factor of five between the two Austin chalk sites, indicating a large difference in the population of ancillary fractures. Post-stimulation production was much higher from the wider zone. At Clinton Co., microearthquakes defined low-angle, reverse-fault fracture zones above and below a producing zone. Associations with depleted production intervals indicated the mapped fractures had been previously drained. Drilling showed that the fractures currently contain brine. The seismic behavior was consistent with poroelastic models that predicted slight increases in compressive stress above and below the drained volume.« less

Reservoir fracture mapping using microearthquakes: Austin chalk, Giddings field, TX and 76 field, Clinton Co., KY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phillips, W.S.; Rutledge, J.T.; Fairbanks, T.D.

1996-12-31

Patterns of microearthquakes detected downhole defined fracture orientation and extent in the Austin chalk, Giddings field, TX and the 76 field, Clinton Co., KY. We collected over 480 and 770 microearthquakes during hydraulic stimulation at two sites in the Austin chalk, and over 3200 during primary production in Clinton Co. Data were of high enough quality that 20%, 31% and 53% of the events could be located, respectively. Reflected waves constrained microearthquakes to the stimulated depths at the base of the Austin chalk. In plan view, microearthquakes defined elongate fracture zones extending from the stimulation wells parallel to the regionalmore » fracture trend. However, widths of the stimulated zones differed by a factor of live between the two Austin chalk sites, indicating a large difference in the population of ancillary fractures. Post-stimulation production was much higher from the wider zone. At Clinton Co., microearthquakes defined low-angle, reverse-fault fracture zones above and below a producing zone. Associations with depleted production intervals indicated the mapped fractures had been previously drained. Drilling showed that the fractures currently contain brine. The seismic behavior was consistent with poroelastic models that predicted slight increases in compressive stress above and below the drained volume.« less

Modeling flow and solute transport in irrigation furrows

USDA-ARS?s Scientific Manuscript database

This paper presents an internally coupled flow and solute transport model for free-draining irrigation furrows. Furrow hydraulics is simulated with a numerical zero-inertia model and solute transport is computed with a model based on a numerical solution of the cross-section averaged advection-dispe...

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

NASA Astrophysics Data System (ADS)

Lin, Chung-Han; Doutt, D. R.; Mishra, U. K.; Merz, T. A.; Brillson, L. J.

2010-11-01

Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

NASA Astrophysics Data System (ADS)

Ostermaier, Clemens; Pozzovivo, Gianmauro; Basnar, Bernhard; Schrenk, Werner; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas; Vincze, Andrej; Tóth, Lajos; Pécz, Bela; Strasser, Gottfried; Pogany, Dionyz; Kuzmik, Jan

2010-11-01

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

A Water Temperature Simulation Model for Rice Paddies With Variable Water Depths

NASA Astrophysics Data System (ADS)

Maruyama, Atsushi; Nemoto, Manabu; Hamasaki, Takahiro; Ishida, Sachinobu; Kuwagata, Tsuneo

2017-12-01

A water temperature simulation model was developed to estimate the effects of water management on the thermal environment in rice paddies. The model was based on two energy balance equations: for the ground and for the vegetation, and considered the water layer and changes in the aerodynamic properties of its surface with water depth. The model was examined with field experiments for water depths of 0 mm (drained conditions) and 100 mm (flooded condition) at two locations. Daily mean water temperatures in the flooded condition were mostly higher than in the drained condition in both locations, and the maximum difference reached 2.6°C. This difference was mainly caused by the difference in surface roughness of the ground. Heat exchange by free convection played an important role in determining water temperature. From the model simulation, the temperature difference between drained and flooded conditions was more apparent under low air temperature and small leaf area index conditions; the maximum difference reached 3°C. Most of this difference occurred when the range of water depth was lower than 50 mm. The season-long variation in modeled water temperature showed good agreement with an observation data set from rice paddies with various rice-growing seasons, for a diverse range of water depths (root mean square error of 0.8-1.0°C). The proposed model can estimate water temperature for a given water depth, irrigation, and drainage conditions, which will improve our understanding of the effect of water management on plant growth and greenhouse gas emissions through the thermal environment of rice paddies.

Numerical simulation of ground-water flow in the central part of the western San Joaquin Valley, California

USGS Publications Warehouse

Belitz, Kenneth; Phillips, Steven P.; Gronberg, Jo Ann M.

1993-01-01

The occurrence of selenium in agricultural drain water in the central part of the western San Joaquin Valley, California, has focused concern on strategies for managing shallow, saline ground water. To assess alternatives to agricultural drains, a three-dimensional, finite-difference numerical model of the regional groundwater flow system was developed. This report documents the mathematical approach used to model the flow system, the data base on which the model is based, and the methods used to calibrate the model. The 550-square-mile study area includes parts of the Panoche Creek alluvial fan and parts of the Little Panoche Creek and Cantua Creek alluvial fans. The model simulates transient flow in the semiconfined and confined zones above and below the Corcoran Clay Member of the Tulare Formation of Pleistocene age. The model incorporates areally distributed ground-water recharge, areally and vertically distributed pumping, regional-collector drains in the Wesdands Water District (operative from 1980 to 1985), on-farm drains in parts of the Panoche, Broadview, and Firebaugh Water Districts, and bare-soil evaporation (which occurs if the water table is within 7 feet of land surface). The model also incorporates texture-based estimates of hydraulic conductivity, where texture is defined as the fraction of coarse-grained deposits present in a given subsurface interval. The numerical model was developed using hydrologic data from 1972 to 1988. Most of the parameters incorporated into the model were evaluated independently of the model, including system geometry, the distribution of texture, the altitudes of the water table and potentiometric surface of the confined zone in 1972 (initial condition), the hydraulic conductivity of coarse-grained deposits derived from the Coast Ranges, the hydraulic conductivity of coarse-grained deposits derived from the Sierra Nevada, specific storage, recharge, pumping, and parameters needed to incorporate drains and bare-soil evaporation. Four parameters were calibration variables: the hydraulic conductivity of fine-grained deposits in the semiconfined zone, the hydraulic conductivity of the Corcoran Clay Member, specific yield, and the transmissivity of the confined zone. The model was calibrated in two phases. In the first phase, a steady-state model of the ground-water flow system in 1984 was used to constrain the relation between the hydraulic conductivity of fine-grained deposits in the semiconfined zone and the hydraulic conductivity of the Corcoran Clay Member, thus reducing the number of independent variables from four to three. In the second phase of calibration, the change in altitude of the water table from 1972 to 1984, the change in altitude of the potentiometric surface of the confined zone from 1972 to 1984, and the number of model cells subject to bare-soil evaporation from 1972 to 1988 were used to evaluate the remaining three variables. The calibrated model reproduces the average change in water-table altitude (1972-84) to within 0.4 foot (average measured change 11.5 feet) and the average change in confined zone head (1972- 84) to within 19 feet (average measured change 120 feet). The simulated time-series record of the total number of model cells subject to bare-soil evaporation (each cell is 1 mile square) is within the range of the measured data. The measured values are at a minimum in October and a maximum in July. The October values ranged from 103 in 1972 to 132 in 1984 (the drains were closed in 1985) to 151 in 1988. The July values ranged from 144 in 1973 to 198 in 1984, to 204 in 1988. The simulated values ranged from 103 in 1972 to 161 in 1984, to 208 in 1988.

Verifiable metamodels for nitrate losses to drains and groundwater in the Corn Belt, USA

USGS Publications Warehouse

Nolan, Bernard T.; Malone, Robert W.; Gronberg, Jo Ann M.; Thorp, K.R.; Ma, Liwang

2012-01-01

Nitrate leaching in the unsaturated zone poses a risk to groundwater, whereas nitrate in tile drainage is conveyed directly to streams. We developed metamodels (MMs) consisting of artificial neural networks to simplify and upscale mechanistic fate and transport models for prediction of nitrate losses by drains and leaching in the Corn Belt, USA. The two final MMs predicted nitrate concentration and flux, respectively, in the shallow subsurface. Because each MM considered both tile drainage and leaching, they represent an integrated approach to vulnerability assessment. The MMs used readily available data comprising farm fertilizer nitrogen (N), weather data, and soil properties as inputs; therefore, they were well suited for regional extrapolation. The MMs effectively related the outputs of the underlying mechanistic model (Root Zone Water Quality Model) to the inputs (R2 = 0.986 for the nitrate concentration MM). Predicted nitrate concentration was compared with measured nitrate in 38 samples of recently recharged groundwater, yielding a Pearson’s r of 0.466 (p = 0.003). Predicted nitrate generally was higher than that measured in groundwater, possibly as a result of the time-lag for modern recharge to reach well screens, denitrification in groundwater, or interception of recharge by tile drains. In a qualitative comparison, predicted nitrate concentration also compared favorably with results from a previous regression model that predicted total N in streams.

Abdominal drainage versus no drainage post gastrectomy for gastric cancer.

PubMed

Wang, Zhen; Chen, Junqiang; Su, Ka; Dong, Zhiyong

2011-08-10

Gastrectomy remains the primary therapeutic method for resectable gastric cancer. Thought of as an important measure to reduce post-operative complications and mortality, abdominal drainage was used widely after gastrectomy for gastric cancer in previous decades. The benefits of abdominal drainage have been questioned by researchers in recent years. The objectives of this review were to access the benefits and harms of routine abdominal drainage post gastrectomy for gastric cancer. We searched the Cochrane Controlled Trials Register (Central/CCTR) in The Cochrane Library (2010, Issue 10), including the Specialised Registers of the Cochrane Upper Gastrointestinal and Pancreatic Diseases (UGPD) Group; MEDLINE (via Pubmed, 1950 to October, 2010); EMBASE (1980 to October, 2010); and the Chinese National Knowledge Infrastructure (CNKI) Database (1979 to October, 2010). We included randomised controlled trials (RCTs) comparing abdominal drain versus no drain in patients who had undergone gastrectomy (not considering the scale of gastrectomy and the extent of lymphadenectomy; irrespective of language, publication status, and the type of drain). We excluded RCTs comparing one drain with another. From each trial, we extracted the data on the methodological quality and characteristics of the included studies, mortality (30-day mortality), re-operations, post-operative complications (pneumonia, wound infection, intra-abdominal abscess, anastomotic leak, drain-related complications), operation time, length of post-operative hospital stay and initiation of soft diet. For dichotomous data, we calculated the risk ratio (RR) and 95% confidence intervals (CI). For continuous data, we calculated mean differences (MD) and 95% CI. We tested heterogeneity using the Chi(2) test. We used a fixed-effect model for data analysis with RevMan software but we used a random-effects model if the P value of the Chi(2) test was less than 0.1. We included four RCTs involving 438 patients (220 patients in the drain group and 218 in the no-drain group).There was no evidence of a difference between the two groups in mortality (RR 1.73, 95% CI 0.38 to 7.84); re-operations (RR 2.49, 95% CI 0.71 to 8.74); post-operative complications (pneumonia: RR 1.18, 95% CI 0.55 to 2.54; wound infection: RR 1.23, 95% CI 0.47 to 3.23; intra-abdominal abscess: RR 1.27, 95% CI 0.29 to 5.51; anastomotic leak: RR 0.93, 95% CI 0.06 to 14.47); and initiation of soft diet (MD 0.15 day, 95% CI -0.07 to 0.37). However, the addition of a drain prolonged the operation time (MD 9.07 min, 95% CI 2.56 to 15.57) and post-operative hospital stay (MD 0.69 day, 95% CI 0.18 to 1.21) and lead to drain-related complications. Additionally, we should note that 30-day mortality and re-operations are very rare events and, as a result, very large numbers of patients would be required to make any sensible conclusions about whether the two groups were similar. The overall quality of the evidence according to the GRADE approach was "Very Low" for mortality and re-operations, and "Low" for post-operative complications, operation time, and post-operative length of stay. We found no convincing evidence to support routine drain use after gastrectomy for gastric cancer.

Abdominal drainage versus no drainage post-gastrectomy for gastric cancer.

PubMed

Wang, Zhen; Chen, Junqiang; Su, Ka; Dong, Zhiyong

2015-05-11

Gastrectomy remains the primary therapeutic method for resectable gastric cancer. Thought of as an important measure to reduce post-operative complications and mortality, abdominal drainage has been used widely after gastrectomy for gastric cancer in previous decades. The benefits of abdominal drainage have been questioned by researchers in recent years. The objectives of this review were to assess the benefits and harms of routine abdominal drainage post-gastrectomy for gastric cancer. We searched the Cochrane Upper Gastrointestinal and Pancreatic Diseases (UGPD) Group Specialised Register and the Cochrane Central Register of Controlled Trials (CENTRAL) in The Cochrane Library (2014, Issue 11); MEDLINE (via PubMed) (1950 to November 2014); EMBASE (1980 to November 2014); and the Chinese National Knowledge Infrastructure (CNKI) Database (1979 to November 2014). We included randomised controlled trials (RCTs) comparing an abdominal drain versus no drain in patients who had undergone gastrectomy (not considering the scale of gastrectomy and the extent of lymphadenectomy); irrespective of language, publication status, and the type of drain. We excluded RCTs comparing one drain with another. We adhered to the standard methodological procedures of The Cochrane Collaboration. From each included trial, we extracted the data on the methodological quality and characteristics of the participants, mortality (30-day mortality), re-operations, post-operative complications (pneumonia, wound infection, intra-abdominal abscess, anastomotic leak, drain-related complications), operation time, length of post-operative hospital stay, and initiation of a soft diet. For dichotomous data, we calculated the risk ratio (RR) and 95% confidence interval (CI). For continuous data, we calculated mean difference (MD) and 95% CI. We tested heterogeneity using the Chi(2) test. We used a fixed-effect model for data analysis with RevMan software, but we used a random-effects model if the P value of the Chi(2) test was less than 0.1. We included four RCTs involving 438 patients (220 patients in the drain group and 218 in the no-drain group). There was no evidence of a difference between the two groups in mortality (RR 1.73, 95% CI 0.38 to 7.84); re-operations (RR 2.49, 95% CI 0.71 to 8.74); post-operative complications (pneumonia: RR 1.18, 95% CI 0.55 to 2.54; wound infection: RR 1.23, 95% CI 0.47 to 3.23; intra-abdominal abscess: RR 1.27, 95% CI 0.29 to 5.51; anastomotic leak: RR 0.93, 95% CI 0.06 to 14.47); or initiation of soft diet (MD 0.15 days, 95% CI -0.07 to 0.37). However, the addition of a drain prolonged the operation time (MD 9.07 min, 95% CI 2.56 to 15.57) and post-operative hospital stay (MD 0.69 day, 95% CI 0.18 to 1.21) and led to drain-related complications. Additionally, we should note that 30-day mortality and re-operations are very rare events and, as a result, very large numbers of patients would be required to make any sensible conclusions about whether the two groups were similar. The overall quality of the evidence according to the GRADE approach was 'very low' for mortality and re-operations, and 'low' for post-operative complications, operation time, and post-operative length of stay. We found no convincing evidence to support routine drain use after gastrectomy for gastric cancer.

'Soft' amplifier circuits based on field-effect ionic transistors.

PubMed

Boon, Niels; Olvera de la Cruz, Monica

2015-06-28

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst-Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.

Chest Drain Fall-Out Rate According to Suturing Practices: A Retrospective Direct Comparison.

PubMed

Asciak, Rachelle; Addala, Dinesh; Karimjee, Juzer; Rana, Maaz Suhail; Tsikrika, Stamatoula; Hassan, Maged Fayed; Mercer, Rachel Mary; Hallifax, Robert John; Wrightson, John Matthew; Psallidas, Ioannis; Benamore, Rachel; Rahman, Najib Mahboob

2018-06-14

Chest drains often become displaced and require replacement, adding unnecessary risks to patients. Simple measures such as suturing of the drain may reduce fall-out rates; however, there is no direct data to demonstrate this and no standardized recommended practice that is evidence based. The study aimed to analyze the rate of chest drain fall out according to suturing practice. Retrospective analysis of all chest drain insertions (radiology and pleural teams) in 2015-2016. Details of chest drain fall out were collected from patient electronic records. Drain "fall out" was pre-hoc defined as the drain tip becoming dislodged outside the pleural cavity unintentionally before a clinical decision was taken to remove the drain. A total of 369 chest drains were inserted: sutured (n = 106, 28.7%; 44 male [41.5%], median age 74 [interquartile range (IQR) 21] years), and unsutured (n = 263, 71.3%; 139 male [52.9%], median age 68 [IQR 21] years). Of the sutured drains, 7 (6.6%) fell out after a mean of 3.3 days (SD 2.6) compared to 39 (14.8%; p = 0.04) unsutured drains falling out after a mean of 2.7 days (SD 2.0; p = 0.8). Within the limits of this retrospective analysis, these results -suggest that suturing of drains is associated with lower fall-out rates. © 2018 S. Karger AG, Basel.

Suction on chest drains following lung resection: evidence and practice are not aligned.

PubMed

Lang, Peter; Manickavasagar, Menaka; Burdett, Clare; Treasure, Tom; Fiorentino, Francesca

2016-02-01

A best evidence topic in Interactive CardioVascular and Thoracic Surgery (2006) looked at application of suction to chest drains following pulmonary lobectomy. After screening 391 papers, the authors analysed six studies (five randomized controlled trials [RCTs]) and found no evidence in favour of postoperative suction in terms of air leak duration, time to chest drain removal or length of stay. Indeed, suction was found to be detrimental in four studies. We sought to determine whether clinical practice is consistent with published evidence by surveying thoracic units nationally and performing a meta-analysis of current best evidence. We systematically searched MEDLINE, EMBASE and CENTRAL for RCTs, comparing outcomes with and without application of suction to chest drains after lung surgery. A meta-analysis was performed using RevMan(©) software. A questionnaire concerning chest drain management and suction use was emailed to a clinical representative in every thoracic unit. Eight RCTs, published 2001-13, with 31-500 participants, were suitable for meta-analysis. Suction prolonged length of stay (weighted mean difference [WMD] 1.74 days; 95% confidence interval [CI] 1.17-2.30), chest tube duration (WMD 1.77 days; 95% CI 1.47-2.07) and air leak duration (WMD 1.47 days; 95% CI 1.45-2.03). There was no difference in occurrence of prolonged air leak. Suction was associated with fewer instances of postoperative pneumothorax. Twenty-five of 39 thoracic units responded to the national survey. Suction is routinely used by all surgeons in 11 units, not by any surgeon in 5 and by some surgeons in 9. Of the 91 surgeons represented, 62 (68%) routinely used suction. Electronic drains are used in 15 units, 10 of which use them routinely. Application of suction to chest drains following non-pneumonectomy lung resection is common practice. Suction has an effect in hastening the removal of air and fluid in clinical experience but a policy of suction after lung resection has not been shown to offer improved clinical outcomes. Clinical practice is not aligned with Level 1a evidence. © The Author 2015. Published by Oxford University Press on behalf of the European Association for Cardio-Thoracic Surgery. All rights reserved.

Might digital drains speed up the time to thoracic drain removal?

PubMed

Afoke, Jonathan; Tan, Carol; Hunt, Ian; Zakkar, Mustafa

2014-07-01

A best evidence topic in thoracic surgery was written according to a structured protocol. The question addressed was: might digital drains speed up the time to thoracic drain removal in terms of time till chest drain removal, hospital stay and overall cost? A total of 296 papers were identified as a result of the search as described below. Of these, five papers provided the best evidence to answer the clinical question. The author, date and country of publication, patient group studied, study type, relevant outcomes, results and study weaknesses of the papers are tabulated. A literature search revealed that several single-centre prospective randomized studies have shown significantly earlier removal of chest drains with digital drains ranging between 0.8 and 2.1 days sooner. However, there was heterogeneity in studies in the management protocol of chest drains in terms of the use of suction, number of drains and assessment for drain removal. Some protocols such as routinely keeping drains irrespective of the presence of air leak or drain output may have skewed results. Differences in exclusion criteria and protocols for discharging home with portable devices may have biased results. Due to heterogeneity in the management protocol of chest drains, there is conflicting evidence regarding hospital stay. The limited data on cost suggest that there may be significantly lower postoperative costs in the digital drain group. All the studies were single-centre series generally including patients with good preoperative lung function tests. Further larger studies with more robust chest drain management protocols are required especially to assess length of hospital stay, cost and whether the results are applicable to a larger patient population. © The Author 2014. Published by Oxford University Press on behalf of the European Association for Cardio-Thoracic Surgery. All rights reserved.

Nitrate concentration-drainage flow (C-Q) relationship for a drained agricultural field in Eastern North Carolina Plain

NASA Astrophysics Data System (ADS)

Liu, W.; Youssef, M.; Birgand, F.; Chescheir, G. M.; Maxwell, B.; Tian, S.

2017-12-01

Agricultural drainage is a practice used to artificially enhance drainage characteristics of naturally poorly drained soils via subsurface drain tubing or open-ditch systems. Approximately 25% of the U.S. agricultural land requires improved drainage for economic crop production. However, drainage increases the transport of dissolved agricultural chemicals, particularly nitrates to downstream surface waters. Nutrient export from artificially drained agricultural landscapes has been identified as the leading source of elevated nutrient levels in major surface water bodies in the U.S. Controlled drainage has long been practiced to reduce nitrogen export from agricultural fields to downstream receiving waters. It has been hypothesized that controlled drainage reduces nitrogen losses by promoting denitrification, reducing drainage outflow from the field, and increasing plant uptake. The documented performance of the practice was widely variable as it depends on several site-specific factors. The goal of this research was to utilize high frequency measurements to investigate the effect of agricultural drainage and related management practices on nitrate fate and transport for an artificially drained agricultural field in eastern North Carolina. We deployed a field spectrophotometer to measure nitrate concentration every 45 minutes and measured drainage flow rate using a V-notch weir every 15 minutes. Furthermore, we measured groundwater level, precipitation, irrigation amount, temperature to characterize antecedent conditions for each event. Nitrate concentration-drainage flow (C-Q) relationships generated from the high frequency measurements illustrated anti-clockwise hysteresis loops and nitrate flushing mechanism in response to most precipitation and irrigation events. Statistical evaluation will be carried out for the C-Q relationships. The results of our analysis, combined with numerical modeling, will provide a better understanding of hydrological and biogeochemical processes controlling the fate and transport of nitrate in drained agricultural landscapes.

What Is the Outcome of an Incision and Drainage Procedure in Endodontic Patients? A Prospective, Randomized, Single-blind Study.

PubMed

Beus, Hannah; Fowler, Sara; Drum, Melissa; Reader, Al; Nusstein, John; Beck, Mike; Jatana, Courtney

2018-02-01

There are no prospective endodontic studies to determine the outcome of an incision and drainage (I&D) procedure for swelling in healthy, endodontic patients. The purpose of this prospective, randomized, single-blind study was to compare the postoperative course of I&D with drain placement versus a mock I&D procedure with mock drain placement after endodontic debridement in swollen emergency patients with symptomatic teeth and a pulpal diagnosis of necrosis. Eighty-one adult emergency patients presenting with clinical swelling received either penicillin or, if allergic, clindamycin and complete endodontic debridement, and then were randomly divided into 2 treatment groups: I&D with drain placement or a mock I&D procedure with mock drain placement. At the end of the appointment, all patients received a combination of ibuprofen/acetaminophen and, if needed, an opioid-containing escape medication. Patients recorded their pain and medication use for 4 days postoperatively. Success was defined as no or mild postoperative pain and no use of an opioid-containing escape medication. Success was evaluated using repeated measure mixed model logistic regression. Both groups had a decrease in postoperative pain and medication use over the 4 days. The mock I&D group had significantly higher success than the I&D group (odds ratio = 2.00; 95% confidence interval, 1.16-3.41). The success rate was 45% with the mock I&D and 33% with the I&D. After endodontic debridement, patients who received a mock I&D procedure with mock drain placement had more success than patients who received I&D with drain placement. Both groups clinically improved over 4 days. Copyright © 2017 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

Development and validation of a runoff and erosion model for lowland drained catchments

NASA Astrophysics Data System (ADS)

Grangeon, Thomas; Cerdan, Olivier; Vandromme, Rosalie; Landemaine, Valentin; Manière, Louis; Salvador-Blanes, Sébastien; Foucher, Anthony; Evrard, Olivier

2017-04-01

Modelling water and sediment transfer in lowland catchments is complex as both hortonian and saturation excess-flow occur in these environments. Moreover, their dynamics was complexified by the installation of tile drainage networks or stream redesign. To the best of our knowledge, few models are able to simulate saturation runoff as well as hortonian runoff in tile-drained catchments. Most of the time, they are used for small scale applications due to their high degree of complexity. In this context, a model of intermediate complexity was developed to simulate the hydrological and erosion processes at the catchment scale in lowland environments. This GIS-based, spatially distributed and lumped model at the event scale uses a theoretical hydrograph to approximate within-event temporal variations. It comprises two layers used to represent surface and subsurface transfers. Observations of soil surface characteristics (i.e. vegetation density, soil crusting and roughness) were used to document spatial variations of physical soil characteristics (e.g. infiltration capacity). Flow was routed depending on the local slope, using LIDAR elevation data. Both the diffuse and the gully erosion are explicitly described. The model ability to simulate water and sediment dynamics at the catchment scale was evaluated using the monitoring of a selection of flood events in a small, extensively cultivated catchment (the Louroux catchment, Loire River basin, central France; 25 km2). In this catchment, five monitoring stations were equipped with water level sensors, turbidity probes, and automatic samplers. Discharge and suspended sediment concentration were deduced from field measurements. One station was installed at the outlet of a tile drain and was used to parameterize fluxes supplied by the drainage network. The selected floods were representative of various rainfall and soil surface conditions (e.g. low-intensity rainfall occurring on saturated soils as well as intense rainfall occurring on dry soils in spring). The model was able to reproduce the runoff volumes for these different situations, and performed well, especially in winter (the relationship between observed and modeled values has R2=0.72) when most of the sediment are transferred. Therefore, future work will evaluate the model ability to reproduce the erosion and sediment dynamics in this catchment in order to provide a tool for sediment management in these lowland environments draining agricultural land where river siltation is problematic.

Emerging technologies to remove nonpoint phosphorus sources from surface water and groundwater

USDA-ARS?s Scientific Manuscript database

New innovative remediation practices are currently being developed that address phosphorus transfers from soils and applied sources to surface and ground waters. These practices include reactive barriers placed along field ditches and drainage ways, retention filters at the end of tile drains, mater...

Analyzing Single-Event Gate Ruptures In Power MOSFET's

NASA Technical Reports Server (NTRS)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

NASA Astrophysics Data System (ADS)

Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

2018-04-01

In this work, we extend our analytical compact model for nanoscale junctionless triple-gate (JL TG) MOSFETs, capturing carrier transport from drift-diffusion to quasi-ballistic regime. This is based on a simple formulation of the low-field mobility extracted from experimental data using the Y-function method, taking into account the ballistic carrier motion and an increased carrier scattering in process-induced defects near the source/drain regions. The case of a Schottky junction in non-ideal ohmic contact at the drain side was also taken into account by modifying the threshold voltage and ideality factor of the JL transistor. The model is validated with experimental data for n-channel JL TG MOSFETs with channel length varying from 95 down to 25 nm. It can be easily implemented as a compact model for use in Spice circuit simulators.