Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

2003-10-01

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (˜0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (˜0.6 A/mm and ˜5%). The Sc 2O 3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ˜5% to 12%) on the surface passivated HEMTs, showing that Sc 2O 3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

NASA Astrophysics Data System (ADS)

Lachab, M.; Sultana, M.; Fatima, H.; Adivarahan, V.; Fareed, Q.; Khan, M. A.

2012-12-01

This work reports on the dc performance of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) grown on Si (1 1 1) substrate and the study of current dispersion in these devices using various widely adopted methods. The MOSHEMTs were fabricated using a very thin (4.2 nm) SiO2 film as the gate insulator and were subsequently passivated with about 30 nm thick Si3N4 layer. For devices with 2.5 µm long gates and a 4 µm drain-to-source spacing, the maximum saturation drain current density was 822 mA mm-1 at + 4 V gate bias and the peak external transconductance was ˜100 mS mm-1. Furthermore, the oxide layer successfully suppressed the drain and gate leakage currents with the subthreshold current and the gate diode current levels exceeding by more than three orders of magnitude the levels found in their Schottky gate counterparts. Capacitance-voltage and dynamic current-voltage measurements were carried out to assess the oxide quality as well as the devices’ surface properties after passivation. The efficacy of each of these characterization techniques to probe the presence of interface traps and oxide charge in the nitride-based transistors is also discussed.

Water movement and isoproturon behaviour in a drained heavy clay soil: 1. Preferential flow processes

NASA Astrophysics Data System (ADS)

Haria, A. H.; Johnson, A. C.; Bell, J. P.; Batchelor, C. H.

1994-12-01

The processes and mechanisms that control pesticide transport from drained heavy clay catchments are being studied at Wytham Farm (Oxford University) in southern England. In the first field season field-drain water contained high concentrations of pesticide. Soil studies demonstrated that the main mechanism for pesticide translocation was by preferential flow processes, both over the soil surface and through the soil profile via a macropore system that effectively by-passed the soil matrix. This macropore system included worm holes, shrinkage cracks and cracks resulting from ploughing. Rainfall events in early winter rapidly created a layer of saturation in the A horizon perched above a B horizon of very low hydraulic conductivity. Drain flow was initiated when the saturated layer in the A horizon extended into the upper 0.06m of the soil profile; thereafter water moved down slope via horizontal macropores possibly through a band of incorporated straw residues. These horizontal pathways for water movement connected with the fracture system of the mole drains, thus feeding the drains. Overland flow occurred infrequently during the season.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jyegal, Jang, E-mail: jjyegal@inu.ac.kr

Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onsetmore » of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices.« less

Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.

PubMed

Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

2016-05-04

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage.

Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

NASA Astrophysics Data System (ADS)

Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

2015-02-01

InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

95 MeV oxygen ion irradiation effects on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ke, S. C.; Siddappa, K.

2003-09-01

The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions, in the fluence range of 5 x 10(10) to 5 x 10(13) ions/cm(2). The influence of ion irradiation on threshold voltage (V-TH), linear drain current (I-DLin), leakage current (I-L), drain conductance (g(D)), transconductance (g(m)), mobility (mu) and drain saturation current (I-DSat) of MOSFETs was studied systematically for various fluence. The V-TH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (N-it) and oxide trapped charge (N-ot) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (DeltaN(it)) charge in irradiated MOSFETs were found to he higher than those of the interface trapped charge (DeltaN(ot)). The I-DLin and I-Dsat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on g(m), g(D) and mu show a degradation varying front 70 to 75% after irradiation. The mobility degradation coefficients for N-it(alpha(it)) and N-ot(alpha(it)) were estimated. The results of these studies are presented and discussed.

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

NASA Astrophysics Data System (ADS)

Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

2008-12-01

Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Upadhyay, Bhanu B.; Takhar, Kuldeep; Jha, Jaya; Ganguly, Swaroop; Saha, Dipankar

2018-03-01

We demonstrate that N2 and O2 plasma treatment followed by rapid thermal annealing leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor. Both the source/drain access and gate regions respond positively improving the transistor characteristics albeit to different extents. Characterizations indicate that the surface show the characteristics of that of a higher band-gap material like AlxOy and GaxOy along with N-vacancy in the sub-surface region. The N-vacancy leads to an increased two-dimensional electron gas density. The formation of oxides lead to a reduced gate leakage current and surface passivation. The DC characteristics show increased transconductance, saturation drain current, ON/OFF current ratio, sub-threshold swing and lower ON resistance by a factor of 2.9, 2.0, 103.3 , 2.3, and 2.1, respectively. The RF characteristics show an increase in unity current gain frequency by a factor of 1.7 for a 500 nm channel length device.

The effects of soil flooding on the establishment of cogongrass (Imperata cylindrica), a nonindigenous invader of the southeastern United States

USGS Publications Warehouse

King, S.E.; Grace, J.B.

2000-01-01

Cogongrass (Imperata cylindrica), an invasive perennial introduced from Southeast Asia, is currently spreading throughout the southeastern United States from Florida to Louisiana. In the U.S., cogongrass is generally not considered a wetland species, although it's range is expanding in regions with high wetland abundance. The objective of this study was to determine if excessive soil moisture might prevent cogongrass from establishing in areas with seasonally flooded soils. In one greenhouse experiment, we examined cogongrass germination and seedling growth in soils that were freely drained, saturated, and inundated. We performed a second greenhouse experiment to evaluate growth and survival of cogongrass seedlings of four different size classes in five soil moisture treatments ranging from dry to inundated. Cogongrass germination was lowest when seeds were overtopped with water. There were no differences in germination between saturated and freely drained treatments; however, seedlings grew largest in freely drained soil and were smallest when immersed. In our second experiment, most cogongrass plants survived except when given no water, but growth differed by watering treatment depending on seedling size. Increasing moisture was more detrimental to the growth of small seedlings compared to the growth of larger cogongrass plants. Overall, cogongrass was most sensitive to soil inundation in the earliest stages of establishment; thus, excessive moisture conditions in the spring, during early seedling development, could restrict invasion of cogongrass by seed. Once cogongrass is established, however, its tolerance of flooding appears to increase.

High-frequency graphene voltage amplifier.

PubMed

Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

2011-09-14

While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

PubMed Central

Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

2016-01-01

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage. PMID:27142861

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Ghaffari, Majid

2015-11-01

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

NASA Astrophysics Data System (ADS)

Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong

2018-05-01

Gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 110 nm and 220 nm, respectively. The gate recess was formed by dry plasma etching with Cr metal as the mask. The fabricated devices with a 25-nm HfO2 gate dielectric both showed a low off-state drain current of about 1.8 × 10-10 A/mm. The effects of recess depth on the electronic characteristics of Ga2O3 MOSFETs were investigated. Upon increasing the recess depth from 110 nm to 220 nm, the saturated drain current decreased from 20.7 mA/mm to 2.6 mA/mm, while the threshold voltage moved increased to +3 V. Moreover, the breakdown voltage increased from 122 V to 190 V. This is mainly because the inverted-trapezoidal gate played the role of a gate-field plate, which suppressed the peak electric field close to the gate.

Engineering solutions to improve the removal of fecal indicator bacteria by bioinfiltration systems during intermittent flow of stormwater.

PubMed

Mohanty, Sanjay K; Torkelson, Andrew A; Dodd, Hanna; Nelson, Kara L; Boehm, Alexandria B

2013-10-01

Bioinfiltration systems facilitate the infiltration of urban stormwater into soil and reduce high flow events and flooding. Stormwater carries a myriad of pollutants including fecal indicator bacteria (FIB). Significant knowledge gaps exist about the ability of bioinfiltration systems to remove and retain FIB. The present study investigates the ability of model, simplified bioinfiltration systems containing quartz sand and iron oxide-coated quartz sand (IOCS) to remove two FIB (Enterococcus faecalis and Escherichia coli) suspended in synthetic stormwater with and without natural organic matter (NOM) as well as the potential for accumulated FIB to be remobilized during intermittent flow. The experiments were conducted in two phases: (1) the saturated columns packed with either sand or IOCS were contaminated by injecting stormwater with bacteria followed by injection of sterile stormwater and (2) the contaminated columns were subjected to intermittent infiltration of sterile stormwater preceded by a pause during which columns were either kept saturated or drained by gravity. During intermittent flow, fewer bacteria were released from the saturated column compared to the column drained by gravity: 12% of attached E. coli and 3% of attached Ent. faecalis were mobilized from the drained sand column compared to 3% of attached E. coli and 2% attached Ent. faecalis mobilized from the saturated sand column. Dry and wet cycles introduce moving air-water interfaces that can scour bacteria from grain surfaces. During intermittent flows, less than 0.2% of attached bacteria were mobilized from IOCS, which bound both bacteria irreversibly in the absence of NOM. Addition of NOM, however, increased bacterial mobilization from IOCS: 50% of attached E. coli and 8% of attached Ent. faecalis were released from IOCS columns during draining and rewetting. Results indicate that using geomedia such as IOCS that promote irreversible attachment of bacteria, and maintaining saturated condition, could minimize the mobilization of previous attached bacteria from bioinfiltration systems, although NOM may significantly decrease these benefits.

Nanoporous carbon tunable resistor/transistor and methods of production thereof

DOEpatents

Biener, Juergen; Baumann, Theodore F; Dasgupta, Subho; Hahn, Horst

2014-04-22

In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically. In any embodiment, the electrolyte solution saturating the nanoporous carbon active channel is adapted for altering an electrical resistance of the nanoporous carbon active channel based on an applied electrochemical potential.

Distribution of selenium in soils of agricultural fields, western San Joaquin Valley, California

USGS Publications Warehouse

Fujii, Roger; Deverel, S.J.; Hatfield, D.B.

1987-01-01

Soils from three agricultural fields in the western San Joaquin Valley were analyzed for soluble, adsorbed, and total concentrations of selenium (Se) to assess the distribution and forms of Se, and the relation of the distribution and forms of Se to the leaching of Se from soils. Soil samples were collected in three fields with drainage systems of different ages (6, 15, 1.5 yr) and different Se concentrations in drain water (58, 430, 3700 micrograms/L respectively). Preliminary methods to determine total Se and estimate adsorbed Se were developed. Of the three fields, concentrations of soluble Se and salinity were highest in soils from the field drained for 1.5 yr and lowest in the field drained for 6 yr. The field drained for 1.5 yr also had the highest concentration of total Se in soil; a median of 1.2 microgram/gm. Of the total concentration of Se in soil from all three fields, the proportion of adsorbed Se and soluble Se ranged from 1 to 11% and < 1 to 63%, respectively. Most of the variance in soluble Se is explained by salinity ( r sq > 0.68) in saturation extracts of soils sampled from below the water table, reflecting evaporative concentration of Se and salinity. In contrast, most soluble salts and Se apparently have been leached from the unsaturated soils in the fields drained for 6 and 15 yr; therefore, the correlation was lower between Se and salinity in saturation extracts of those soils (r sq < 0.33). Among soils from all three fields, the ratio of Se to salinity in saturation extracts increased with increasing salinity. (Author 's abstract)

Anisotropic Behaviour of Opalinus Clay Through Consolidated and Drained Triaxial Testing in Saturated Conditions

NASA Astrophysics Data System (ADS)

Favero, Valentina; Ferrari, Alessio; Laloui, Lyesse

2018-05-01

This paper investigates the anisotropic hydro-mechanical behaviour of Opalinus Clay shale, the host material currently being considered for the construction of a nuclear waste repository in Switzerland. Consolidated and drained triaxial tests on Opalinus Clay from the Mont Terri URL have been conducted in order to derive information on its strength and stiffness properties. Opalinus Clay specimens were tested both parallel to bedding (P-specimens) and perpendicular to bedding (S-specimens). The considered effective confining stress range (from 2 to 12 MPa) has been selected in order to reproduce possible in situ stress conditions for the repository. In this work, particular attention has been paid to the experimental procedure in order to ensure consolidated conditions and avoid generation of unwanted excess pore water pressure during drained shearing. The Skempton B parameter has been determined for all the tested specimens in order to ensure saturation. Both single-stage and multistage triaxial testing procedures were adopted in the experimental campaign. The results of the triaxial tests highlight an anisotropic elastic response of Opalinus Clay: S-specimens present a more compliant behaviour than P-specimens. The values of the Young modulus are found to increase with the increase in mean effective stress. The analysis of the peak and ultimate shear strength results reveals that the material behaves in a similar manner regardless of the considered direction of loading (P and S directions) with respect to the bedding orientation. Peak and ultimate failure envelopes for Opalinus Clay were derived for the investigated stress range.

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

NASA Technical Reports Server (NTRS)

Niedra, Janis M.; Schwarze, Gene E.

2005-01-01

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

Mechanisms of surface runoff genesis on a subsurface drained soil affected by surface crusting: A field investigation

NASA Astrophysics Data System (ADS)

Augeard, Bénédicte; Kao, Cyril; Chaumont, Cédric; Vauclin, Michel

Artificial drainage has been subject to widespread criticism because of its impact on water quality and because there is suspicion that it may have detrimental effects on flood genesis. The present work aims at a better understanding of the mechanisms controlling infiltration and surface runoff genesis, particularly in soils with artificial drainage and affected by surface crusting. A field experiment was conducted during one drainage season (November 2003-March 2004) in the Brie region (80 km east of Paris, France) on a subsurface drained silty soil. Water table elevation and surface runoff were monitored above the drain and at midpoint between drains. Soil water pressure head was measured at various depths and locations between the midpoint and the drain. Soil surface characteristics (microtopography and degree of structural and sedimentary crust development) were recorded regularly on the experimental site and on other plots of various drainage intensities. The results show that the first surface runoff events were induced by high water table. However, runoff was higher at midpoint between the drains because water table reached the soil surface at that point, thus considerably reducing infiltration capacity compared to that above the drain. Comparing different plots, the area with older drainage installation (1948) yielded the most surface runoff. Wider drain spacing, smaller drain depth and possible plugging may have led to a greater area of saturated soil between drains. During the winter period, the impact of raindrops induced the formation of a structural crust on the soil surface. Furthermore, the development of the sedimentary crust, which was favored by water actually flowing on the soil surface during the high water table periods could be correlated with surface runoff volume. The formation of this crust had a significant impact on runoff occurrence at the end of the winter. Therefore, poorly drained fields presented more favorable conditions for both Horton type runoff and saturation excess runoff. Drainage effectively reduces surface runoff occurrences not only by lowering the water table in winter but also by limiting soil surface sealing.

Raman imaging of carrier distribution in the channel of an ionic liquid-gated transistor fabricated with regioregular poly(3-hexylthiophene)

NASA Astrophysics Data System (ADS)

Wada, Y.; Enokida, I.; Yamamoto, J.; Furukawa, Y.

2018-05-01

Raman images of carriers (positive polarons) at the channel of an ionic liquid-gated transistor (ILGT) fabricated with regioregular poly(3-hexylthiophene) (P3HT) have been measured with excitation at 785 nm. The observed spectra indicate that carriers generated are positive polarons. The intensities of the 1415 cm-1 band attributed to polarons in the P3HT channel were plotted as Raman images; they showed the carrier density distribution. When the source-drain voltage VD is lower than the source-gate voltage VG (linear region), the carrier density was uniform. When VD is nearly equal to VG (saturation region), a negative carrier density gradient from the source electrode towards the drain electrode was observed. This carrier density distribution is associated with the observed current-voltage characteristics, which is not consistent with the "pinch-off" theory of inorganic semiconductor transistors.

A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect

NASA Astrophysics Data System (ADS)

Mao, Kun; Qiao, Ming; Zhang, WenTong; Zhang, Bo; Li, Zhaoji

2014-11-01

This paper proposes a 700 V narrow channel region triple-RESURF (reduced surface field) n-type junction field-effect transistor (NCT-nJFET). Compared to traditional structures, low pinch-off voltage (VP) with unobvious drain-induced barrier lowering (DIBL) effect and large saturated current (IDsat) are achieved. This is because p-type buried layer (Pbury) and PWELL are introduced to shape narrow n-type channel in JFET channel region. DIBL sensitivity (SDIBL) is firstly introduced in this paper to analyze the DIBL effect of high-voltage long-channel JFET. Ultra-high breakdown voltage is obtained by triple RESURF technology. Experimental results show that proposed NCT-nJFET achieves 24-V VP, 3.5% SDIBL, 2.3-mA IDsat, 800-V OFF-state breakdown voltage (OFF-BV) and 650-V ON-state breakdown voltage when VGS equals 0 V (ON-BV).

High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

PubMed

Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

2010-10-29

Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Boudier, D.; Cretu, B.; Simoen, E.; Veloso, A.; Collaert, N.

2018-05-01

In this work, Gate-All-Around Nanowire MOSFETs have been studied at very low temperatures. DC behaviors have been investigated in the linear operation and saturation regions, giving access to several analog parameters. Static characteristics at 4.2 K and low polarization exhibit step- like variations of the drain current, which can be linked to energy subband scattering. First results on the impact of quantum transport mechanism on the low frequency noise are shown. Finally the low frequency noise spectroscopy has led to the identification of silicon film traps.

Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.

PubMed

Hyung, Gun Woo; Wang, Jian-Xun; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Young Kwan

2013-06-01

We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.8 cm2Ns) and on/off current ratios of approximately 10(6).

AlN/GaN heterostructures for normally-off transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.

The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

DOE PAGES

Ahn, Shihyun; Zhu, Weidi; Dong, Chen; ...

2015-04-21

Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 10 9 and 5 × 10 8 cm ₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, theremore » was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

NASA Astrophysics Data System (ADS)

Ostermaier, Clemens; Pozzovivo, Gianmauro; Basnar, Bernhard; Schrenk, Werner; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas; Vincze, Andrej; Tóth, Lajos; Pécz, Bela; Strasser, Gottfried; Pogany, Dionyz; Kuzmik, Jan

2010-11-01

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

Experimental investigation on On-Off current ratio behavior near onset voltage for a pentacene based organic thin film transistor

NASA Astrophysics Data System (ADS)

Amrani, Aumeur El; Es-saghiri, Abdeljabbar; Boufounas, El-Mahjoub; Lucas, Bruno

2018-06-01

The performance of a pentacene based organic thin film transistor (OTFT) with polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is investigated. On the one hand, we showed that the threshold voltage increases with gate voltage, and on the other hand that it decreases with drain voltage. Thus, we noticed that the onset voltage shifts toward positive voltage values with the drain voltage increase. In addition, threshold-onset differential voltage (TODV) is proposed as an original approach to estimate an averaged carrier density in pentacene. Indeed, a value of about 4.5 × 1016 cm-3 is reached at relatively high gate voltage of -50 V; this value is in good agreement with that reported in literature with other technique measurements. However, at a low applied gate voltage, the averaged pentacene carrier density remains two orders of magnitude lower; it is of about 2.8 × 1014 cm-3 and remains similar to that obtained from space charge limited current approach for low applied bias voltage of about 2.2 × 1014 cm-3. Furthermore, high IOn/IOff and IOn/IOnset current ratios of 5 × 106 and 7.5 × 107 are reported for lower drain voltage, respectively. The investigated OTFTs also showed good electrical performance including carrier mobility increasing with gate voltage; mobility values of 4.5 × 10-2 cm2 V-1 s-1 and of 4.25 × 10-2 cm2 V-1 s-1 are reached for linear and saturation regimes, respectively. These results remain enough interesting since current modulation ratio exceeds a value of 107 that is a quite important requirement than high mobility for some particular logic gate applications.

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung

2013-09-01

This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S.S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (Vd). However, our experimental data indicate that S.S. has no evident change under CHCS, but threshold voltage (Vth) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such Vth degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different Vth behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-Nit occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior.

The transformation of weak saturated soils using piles-drains for improving its mechanical properties

NASA Astrophysics Data System (ADS)

Ter-Martirosyan, Z. G.; Ter-Martirosyan, A. Z.; Sidorov, V. V.

2018-04-01

In practice of increased responsibility structures design there are often weak saturated clayey soils with low characteristics of deformability and strength take place on the construction site. In these cases, foundations using piles-drains of sandy or coarse material are recommended by norms, which is able to bear the load and to accelerate the consolidation process. The presented solutions include an analytical solution of the interaction problem between piles and slab raft foundation with the surrounding soil of the base with the possibility of extension of pile shaft. The closed-form solutions to determine the stresses in pile shaft and in the soil under the foundation slab are obtained. The article presents the results of large scale tests in the pilot area construction of major energy facilities in Russia.

A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Moldovan, Oana; Castro-Carranza, Alejandra; Cerdeira, Antonio; Estrada, Magali; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Miljakovic, Slobodan; Iñiguez, Benjamin

2016-12-01

An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices.

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

2004-01-01

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Overland flow dynamics through visual observation using time-lapse photographs

NASA Astrophysics Data System (ADS)

Silasari, Rasmiaditya; Blöschl, Günter

2016-04-01

Overland flow process on agricultural land is important to be investigated as it affects the stream discharge and water quality assessment. During rainfall events the formation of overland flow may happen through different processes (i.e. Hortonian or saturation excess overland flow) based on the governing soil hydraulic parameters (i.e. soil infiltration rate, soil water capacity). The dynamics of the soil water state and the processes will affect the surface runoff response which can be analyzed visually by observing the saturation patterns with a camera. Although visual observation was proven useful in laboratory experiments, the technique is not yet assessed for natural rainfall events. The aim of this work is to explore the use of time-lapse photographs of naturally occurring-saturation patterns in understanding the threshold processes of overland flow generation. The image processing produces orthographic projection of the saturation patterns which will be used to assess the dynamics of overland flow formation in relation with soil moisture state and rainfall magnitude. The camera observation was performed at Hydrological Open Air Laboratory (HOAL) catchment at Petzenkirchen, Lower Austria. The catchment covers an area of 66 ha dominated with agricultural land (87%). The mean annual precipitation and mean annual flow at catchment outlet are 750 mm and 4 l/s, respectively. The camera was set to observe the overland flow along a thalweg on an arable field which was drained in 1950s and has advantages of: (1) representing agricultural land as the dominant part of the catchment, (2) adjacent to the stream with clear visibility (no obstructing objects, such as trees), (3) drained area provides extra cases in understanding the response of tile drain outflow to overland flow formation and vice versa, and (4) in the vicinity of TDT soil moisture stations. The camera takes a picture with 1280 x 720 pixels resolution every minute and sends it directly in a PC via fiber-optic network. Exterior orientation is required to project the observed saturation patterns in the photographs onto orthographic map. This was done by georeferencing the on-field GPS points taken throughout the camera field of view to the orthographic map obtained from an airborne laser scanning (ALS) campaign. Based on the projected saturation patterns, the patterns dynamics were analyzed in relation to soil moisture state and rainfall magnitude for events in autumn and winter 2014. From the observed events during saturated soil condition, tile drain flow reacted within one hour after the rain started, while no sign of saturation pattern evolving into overland flow was observed. Within two hours after the rain started, overland flow was fully formed along the thalweg which flowed to the erosion gully and created signal at the discharge station almost immediately. From the surface roughness aspect, field management is an important factor of overland flow development as surface runoff was formed faster along the tractor tracks. In overall, time-lapse photographs have potentials to qualitatively assess the saturation patterns dynamics during rainfall events with high time resolution and wide area coverage.

Leakage current conduction in metal gate junctionless nanowire transistors

NASA Astrophysics Data System (ADS)

Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

2017-05-01

In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region.

Microbial Community Shifts Associated with RDX Loss in a Saturated and Well-Drained Surface Soil

DTIC Science & Technology

2005-03-01

community containing firmicutes (36%), proteobacteria (54%), actinobacteria (8%), and bacteroidetes (1%). The unsaturated soil contained a greater number of...genera (2.5 times that of the saturated soil) within similar phyla (19% firmicutes, 66% proteobacteria, 6% actinobacteria , 2% bacteroidetes, and 7...by the PLFA analysis. The T-RFLP analysis identified firmicutes (36%), proteobacteria (54%), actinobacteria (8%), and bacteroidetes (1%) in the

Voltage Amplifier Based on Organic Electrochemical Transistor.

PubMed

Braendlein, Marcel; Lonjaret, Thomas; Leleux, Pierre; Badier, Jean-Michel; Malliaras, George G

2017-01-01

Organic electrochemical transistors (OECTs) are receiving a great deal of attention as amplifying transducers for electrophysiology. A key limitation of this type of transistors, however, lies in the fact that their output is a current, while most electrophysiology equipment requires a voltage input. A simple circuit is built and modeled that uses a drain resistor to produce a voltage output. It is shown that operating the OECT in the saturation regime provides increased sensitivity while maintaining a linear signal transduction. It is demonstrated that this circuit provides high quality recordings of the human heart using readily available electrophysiology equipment, paving the way for the use of OECTs in the clinic.

Effect of the mobility on (I-V) characteristics of the MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benzaoui, Ouassila, E-mail: o-benzaoui@yahoo.fr; Azizi, Cherifa, E-mail: aziziche@yahoo.fr

2013-12-16

MOSFET Transistor was the subject of many studies and research works (electronics, data-processing, telecommunications...) in order to exploit its interesting and promising characteristics. The aim of this contribution is devoted to the effect of the mobility on the static characteristics I-V of the MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program. The influence of mobility was studied. Obtained results allow us to determine the mobility law in the MOSFET which gives optimal (I-V) characteristics of the component.

Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

NASA Astrophysics Data System (ADS)

Zhu, Wencong

Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because of its shorter channel length and wider width, however, it also exhibit higher gate leakage current (>10-7 A) than side channel (<10-7 A) due to larger Ga ion implantation and diffusion region in SiO2 after annealing. Hysteresis window increase and positive VON shift were also observed due to the interface trap density increase and carrier density suppression both by Ga ions. Laser interference lithography was applied to define the IGZO active region, which gives more flexibility on TFT channel dimension and circuit modification. He-Cd laser with 325 nm wavelength was used to define 2D array of IGZO islands with period of 2.5 im. Logic gate array was designed and fabricated by combining this 2D array of IGZO islands and FIB direct channel milling. After annealing, device shows on-off feature, but high temperature (400 °C) release more free carrier and results in negative shift of VON. The row selection voltage was also introduced in the design of logic gate array to act as switch of input signals to each row separately. However, due to the long input signal sweeping time, the leakage current cannot be overlooked. The idea can be verified by AC or short pulse input signal.

Lack of differences in the regional variation of oxygen saturation in larger retinal vessels in diabetic maculopathy and proliferative diabetic retinopathy.

PubMed

Jørgensen, Christina Mørup; Bek, Toke

2017-06-01

Diabetic retinopathy is characterised by morphological lesions in the ocular fundus related to disturbances in retinal blood flow. The two vision threatening forms of retinopathy show specific patterns of distribution of retinal lesions with proliferative diabetic retinopathy (PDR) developing secondary to ischaemia and hypoxia in the retinal periphery and diabetic maculopathy (DM) developing secondary to hyperperfusion and increased vascular permeability in the macular area. These differences in the distribution of retinal lesions might be reflected in regional differences in oxygen saturation in the larger retinal vessels. Dual-wavelength retinal oximetry was performed in 30 normal persons, 30 patients with DM and 30 patients with PDR, and the oxygen saturation was measured in peripapillary vessels supplying the four retinal quadrants and in branches from the upper temporal arcades supplying, respectively, the macular area and the retinal periphery. The overall oxygen saturation was significantly higher in diabetic patients than in normal persons and the arteriovenous (AV) saturation difference significantly lower in the patients with DM. The regional variation in oxygen saturation was similar in the three studied groups with a decreasing saturation from the upper nasal through the lower nasal, lower temporal and the upper temporal peripapillary vessels, and with a significantly higher oxygen saturation in venules draining the macular area than in venules draining the retinal periphery. The regional differences in retinal lesions in vision threatening diabetic retinopathy are not reflected in regional differences in the oxygen saturation of larger retinal vessels. The development of vision threatening diabetic retinopathy depends on other factors, such as, for example, regional differences in the retinal microcirculation. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/.

Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Jun-Sik; Rim, Taiuk; Kim, Jungsik; Kim, Kihyun; Baek, Chang-Ki; Jeong, Yoon-Ha

2015-03-01

Random dopant fluctuation effects of gate-all-around inversion-mode silicon nanowire field-effect transistors (FETs) with different diameters and extension lengths are investigated. The nanowire FETs with smaller diameter and longer extension length reduce average values and variations of subthreshold swing and drain-induced barrier lowering, thus improving short channel immunity. Relative variations of the drain currents increase as the diameter decreases because of decreased current drivability from narrower channel cross-sections. Absolute variations of the drain currents decrease critically as the extension length increases due to decreasing the number of arsenic dopants penetrating into the channel region. To understand variability origins of the drain currents, variations of source/drain series resistance and low-field mobility are investigated. All these two parameters affect the variations of the drain currents concurrently. The nanowire FETs having extension lengths sufficient to prevent dopant penetration into the channel regions and maintaining relatively large cross-sections are suggested to achieve suitable short channel immunity and small variations of the drain currents.

Low voltage operation of GaN vertical nanowire MOSFET

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Seo, Jae Hwa; Won, Chul-Ho; Im, Ki-Sik; Lee, Yong Soo; Jang, Hwan Soo; Kim, Dae-Hyun; Kang, In Man; Lee, Jung-Hee

2018-07-01

GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropic side-wall wet etching in TMAH solution and photoresist etch-back process. The VNWMOSFET exhibited output characteristics with very low saturation drain voltage of less than 0.5 V, which is hardly observed from the wide bandgap-based devices. Simulation results indicated that the narrow diameter of the VNWMOSFET with relatively short channel length is responsible for the low voltage operation. The VNWMOSFET also demonstrated normally-off mode with threshold voltage (VTH) of 0.7 V, extremely low leakage current of ∼10-14 A, low drain-induced barrier lowering (DIBL) of 125 mV/V, and subthreshold swing (SS) of 66-122 mV/decade. The GaN GAA VNWMOSFET with narrow channel diameter investigated in this work would be promising for new low voltage logic application. He has been a Professor with the School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, Korea, since 1993

Homogenization of one-dimensional draining through heterogeneous porous media including higher-order approximations

NASA Astrophysics Data System (ADS)

Anderson, Daniel M.; McLaughlin, Richard M.; Miller, Cass T.

2018-02-01

We examine a mathematical model of one-dimensional draining of a fluid through a periodically-layered porous medium. A porous medium, initially saturated with a fluid of a high density is assumed to drain out the bottom of the porous medium with a second lighter fluid replacing the draining fluid. We assume that the draining layer is sufficiently dense that the dynamics of the lighter fluid can be neglected with respect to the dynamics of the heavier draining fluid and that the height of the draining fluid, represented as a free boundary in the model, evolves in time. In this context, we neglect interfacial tension effects at the boundary between the two fluids. We show that this problem admits an exact solution. Our primary objective is to develop a homogenization theory in which we find not only leading-order, or effective, trends but also capture higher-order corrections to these effective draining rates. The approximate solution obtained by this homogenization theory is compared to the exact solution for two cases: (1) the permeability of the porous medium varies smoothly but rapidly and (2) the permeability varies as a piecewise constant function representing discrete layers of alternating high/low permeability. In both cases we are able to show that the corrections in the homogenization theory accurately predict the position of the free boundary moving through the porous medium.

Cannulation for veno-venous extracorporeal membrane oxygenation

PubMed Central

2018-01-01

Extracorporeal membrane oxygenation (ECMO) is described as a modified, smaller cardiopulmonary bypass circuit. The veno-venous (VV) ECMO circuit drains venous blood, oxygenate the blood, and pump the blood back into the same venous compartment. Draining and reinfusing in the same compartment means there are a risk of recirculation. The draining position within the venous system, ECMO pump flow, return flow position within the venous system and the patients cardiac output (CO) all have an impact on recirculation. Using two single lumen cannulas or one dual lumen cannula, but also the design of the venous cannula, can have an impact on where within the venous system the cannula is draining blood and will affect the efficiency of the ECMO circuit. VV ECMO can be performed with different cannulation strategies. The use of two single lumen cannulas draining in inferior vena cava (IVC) and reinfusing in superior vena cava (SVC) or draining in SVC and reinfusing in IVC, or one dual lumen cannula inserted in right jugular vein is all possible cannulation strategies. Independent of cannulation strategy there will be a risk of recirculation. Efficiency can be reasonable in either strategy if the cannulas are carefully positioned and monitored during the dynamic procedure of pulmonary disease. The disadvantage draining from IVC only occurs when there is a need for converting from VV to veno-arterial (VA) ECMO, reinfusing in the femoral artery. Then draining from SVC is the most efficient strategy, draining low saturated venous blood, and also means low risk of dual circulation. PMID:29732177

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

NASA Astrophysics Data System (ADS)

Ren, F.; Kopf, R. F.; Kuo, J. M.; Lothian, J. R.; Lee, J. W.; Pearton, S. J.; Shul, R. J.; Constantine, C.; Johnson, D.

1998-05-01

InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors have been exposed to inductively coupled plasma or electron cyclotron resonance H 2 plasmas as a function of pressure, source power and rf chuck power. The transconductance, gate ideality factor and saturated drain-source current are all degraded by the plasma treatment. Two mechanisms are identified: passivation of Si dopants in the InGaP or AlGaAs donor layers by H 0 and lattice disorder created by H + and H 2+ ion bombardment. HEMTs are found to be more susceptible to plasma-induced degradation than heterojunction bipolar transistors.

Electrospun Polyaniline/Polyethylene Oxide Nanofiber Field Effect Transistor

NASA Technical Reports Server (NTRS)

Pinto, N. J.; Johnson, A. T.; MacDiarmid, A. G.; Mueller, C. H.; Theofylaktos, N.; Robinson, D. C.; Miranda, F. A.

2003-01-01

We report on the observation of field effect transistor (FET) behavior in electrospun camphorsulfonic acid doped polyaniline(PANi)/polyethylene oxide(PE0) nanofibers. Saturation channel currents are observed at surprisingly low source/drain voltages. The hole mobility in the depletion regime is 1.4 x 10(exp -4) sq cm/V s while the 1-D charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating 1-D polymer FET's.

Comparison of multispectral remote-sensing techniques for monitoring subsurface drain conditions. [Imperial Valley, California

NASA Technical Reports Server (NTRS)

Goettelman, R. C.; Grass, L. B.; Millard, J. P.; Nixon, P. R.

1983-01-01

The following multispectral remote-sensing techniques were compared to determine the most suitable method for routinely monitoring agricultural subsurface drain conditions: airborne scanning, covering the visible through thermal-infrared (IR) portions of the spectrum; color-IR photography; and natural-color photography. Color-IR photography was determined to be the best approach, from the standpoint of both cost and information content. Aerial monitoring of drain conditions for early warning of tile malfunction appears practical. With careful selection of season and rain-induced soil-moisture conditions, extensive regional surveys are possible. Certain locations, such as the Imperial Valley, Calif., are precluded from regional monitoring because of year-round crop rotations and soil stratification conditions. Here, farms with similar crops could time local coverage for bare-field and saturated-soil conditions.

Modeling and risk assessment of a 30-Year-old subsurface radioactive-liquid drain field

NASA Astrophysics Data System (ADS)

Dawson, Lon A.; Pohl, Phillip I.

1997-11-01

The contamination from a 30-year-old radioactive liquid drain field was assessed for movement in the subsurface and potential risks to humans. This assessment included determining field concentrations of cesium 137 (137Cs) and other inorganic contaminants and modeling of the flow and transport of the liquid waste that was sent to the drain field. The field investigation detected no contamination deeper than 15 feet (4.6 m) from the bottom of the drain field. Prediction of the water content of the vadose zone showed no saturated conditions for times greater than 10 years after the known infiltration. Sensitivity analysis of the modeling parameters showed the equilibrium sorption coefficient to be the most important factor in predicting the contaminant plumes. Calibration of modeling results with field data gave a 137Cs sorption coefficient that is within the range of values found in the literature. The risk assessment for the site showed that the contamination poses no significant risk to human health.

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

NASA Technical Reports Server (NTRS)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Method for shallow junction formation

DOEpatents

Weiner, K.H.

1996-10-29

A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

Method for shallow junction formation

DOEpatents

Weiner, Kurt H.

1996-01-01

A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.

Leaching of dissolved phosphorus from tile-drained agricultural areas.

PubMed

Andersen, H E; Windolf, J; Kronvang, B

2016-01-01

We investigated leaching of dissolved phosphorus (P) from 45 tile-drains representing animal husbandry farms in all regions of Denmark. Leaching of P via tile-drains exhibits a high degree of spatial heterogeneity with a low concentration in the majority of tile-drains and few tile-drains (15% in our investigation) having high to very high concentration of dissolved P. The share of dissolved organic P (DOP) was high (up to 96%). Leaching of DOP has hitherto been a somewhat overlooked P loss pathway in Danish soils and the mechanisms of mobilization and transport of DOP needs more investigation. We found a high correlation between Olsen-P and water extractable P. Water extractable P is regarded as an indicator of risk of loss of dissolved P. Our findings indicate that Olsen-P, which is measured routinely in Danish agricultural soils, may be a useful proxy for the P leaching potential of soils. However, we found no straight-forward correlation between leaching potential of the top soil layer (expressed as either degree of P saturation, Olsen-P or water extractable P) and the measured concentration of dissolved P in the tile-drain. This underlines that not only the source of P but also the P loss pathway must be taken into account when evaluating the risk of P loss.

Role of air-water interfaces on retention of viruses under unsaturated conditions

NASA Astrophysics Data System (ADS)

Torkzaban, S.; Hassanizadeh, S. M.; Schijven, J. F.; van den Berg, H. H. J. L.

2006-12-01

We investigated transport of viruses through saturated and unsaturated sand columns. Unsaturated experiments were conducted under conditions of uniform saturation and steady state water flow. The water saturation ranged from 1 to 0.5. Bacteriophages MS2 and ϕX174 were used as surrogates for pathogenic viruses in these studies. Phosphate-buffered solutions with different pH values (7.5, 6.2, 5.5, and 5) were utilized. Virus transport was modeled assuming first-order kinetic adsorption for interactions to the solid-water interface (SWI) and the air-water interface (AWI). Under saturated conditions, virus retention increased as pH decreased, and a one-site kinetic model produced a good fit to the breakthrough curves. Under unsaturated conditions a two-site kinetic model was needed to fit the breakthrough curves satisfactorily. The second site was attributed to the adsorption of phages to the AWI. According to our results, ϕX174 exhibits a high affinity to the AWI at pH values below 6.6 (the isoelectric point of ϕX174). Although it is believed that MS2 is more hydrophobic than ϕX174, MS2 had a lower affinity to the AWI than ϕX174, presumably because of the lower isoelectric point of MS2, which is equal to 3.9. Under unsaturated conditions, viruses captured within the column could be recovered in the column outflow by resaturating and immediately draining the column. Draining columns under saturated conditions, however, did not result in any recovery of viruses. Therefore the recovery can be attributed to the release of viruses adsorbed to the AWI. Our results suggest that electrostatic interactions of viruses with the AWI are much more important than hydrophobicity.

Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length

NASA Astrophysics Data System (ADS)

Tiwari, Durgesh Laxman; Sivasankaran, K.

This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95μm and 5nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics.

High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yu; Che, Yuchi; Zhou, Chongwu, E-mail: chongwuz@usc.edu

In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailoredmore » diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.« less

Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pasadas, Francisco, E-mail: Francisco.Pasadas@uab.cat; Jiménez, David

2015-12-28

Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge, and capacitance. In this work, we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been includedmore » considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.« less

An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications

NASA Astrophysics Data System (ADS)

Huanqin, Dang; Xiaoming, Wu; Xiaowei, Sun; Runqiu, Zou; Ruochuan, Zhang; Shougen, Yin

2015-10-01

We report an effective method to improve the performance of p-type copper phthalocyanine (CuPc) based organic field-effect transistors (OFETs) by employing a thin para-quaterphenyl (p-4p) film and simultaneously applying V2O5 to the source/drain regions. The p-4p layer was inserted between the insulating layer and the active layer, and V2O5 layer was added between CuPc and Al in the source-drain (S/D) area. As a result, the field-effect saturation mobility and on/off current ratio of the optimized device were improved to 5 × 10-2 cm2/(V·s) and 104, respectively. We believe that because p-4p could induce CuPc to form a highly oriented and continuous film, this resulted in the better injection and transport of the carriers. Moreover, by introducing the V2O5 electrode's modified layers, the height of the carrier injection barrier could be effectively tuned and the contact resistance could be reduced. Project supported by the National Natural Science Foundation of China (No. 60676051), the National High Technology Research and Development Program of China (No. 2013A A014201), the Scientific Developing Foundation of Tianjin Education Commission (No. 2011ZD02), the Key Science and Technology Support Program of Tianjin (No. 14ZCZDGX00006), and the Foundation of Key Discipline of Material Physics and Chemistry of Tianjin.

A theoretical approach to study the optical sensitivity of a MESFET

NASA Astrophysics Data System (ADS)

Dutta, Sutanu

2018-05-01

A theoretical model to study the optical sensitivity of a metal-semiconductor field effect transistor has been proposed for a relatively high drain field. An analytical expression of drain current of the device has been derived for a MESFET under optical illumination considering field dependent mobility of electrons across the channel. The variation of drain current with and without optical illumination has been studied with drain and gate voltages. The optical sensitivity of the drain current has been studied for different biasing conditions and gate lengths. In addition, the shift in threshold voltage of a MESFET under optical illumination is determined and optical sensitivity of the device in terms of its threshold voltage has been studied.

Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations.

PubMed

Yoon, Young Jun; Eun, Hye Rim; Seo, Jae Hwa; Kang, Hee-Sung; Lee, Seong Min; Lee, Jeongmin; Cho, Seongjae; Tae, Heung-Sik; Lee, Jung-Hee; Kang, In Man

2015-10-01

We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (Cgd) because of the increase in the overlap capacitance (Cov) and inversion capacitance (Cinv). Thus, in this work, a dual-metal gate structure is additionally applied along with the drain overlap. The current performance and the total gate capacitance (Cgg) of the device with a dual-metal gate can be possibly controlled by adjusting the metal gate workfunction (φgate) and φoverlap-gate in the overlapping regions. As a result, the intrinsic delay time (τ) is greatly reduced by obtaining lower Cgg divided by the on-state current (Ion), i.e., Cgg/Ion. We have successfully demonstrated excellent LP and high-speed performance of a highly scaled TFET by adopting both drain overlap and dual-metal gate with DIBT minimization.

Detecting Pore Fluid Pressure Changes by Using the Vp/Vs Ratio

NASA Astrophysics Data System (ADS)

Vanorio, T.; Mavko, G.

2006-12-01

A central problem in studies aimed at predicting the dynamic behavior of faults is monitoring and quantifying fluid changes in areas prone to overpressure. Experimental and modeling studies show the Vp/Vs ratio to be a good determinant of the saturation state of a rock formation as well as of its inner pore pressure condition. Dectecting pore pressure changes depends, among other causes, on the reliability of laboratory data to calibrate the in-situ measured velocities. Ideally, laboratory experiments performed under controlled conditions would identify the fundamental mechanisms responsible for changes in the measured acoustic properties. However, technical limitations in the laboratory together with the assumptions driving the experimental and modeling approaches rise spouriuos mechanisms which hinder our present understanding of the actual role of high pore pressure on the elastic and poroelastic parameters. Critical issues unclude: a) the frequencies used in the laboratory are responsible for high-frequency fluid effects which induce velocity dispersion. As a result, both the effective stress parameter and velocities (and their pressure-dependence) estimated from high- frequency ultrasonic data are different from those applicable to crustal low frequency wave propagation; b) laboratory measurements made at dry, drained conditions are assumed to mimic those in gas pressured rocks. However, in dry, drained conditions, no pore pressure is exerted in the pore space, and the pore gas is infinitely compressible; c) when using room-dry, drained measurements as the baseline to model pressured rock formations, the unloading path (i.e. decreasing confining pressure) is supposed to mimic the inflationary path due to pore pressure increase. Doing so, it is assumed that the amount of crack opening due to pore pressure is equal to that of crack closure caused by the overburden stress and thus, the effective stress coefficient is implicitely assumed equal to 1. To minimize the assumptions and limitations described above, we designed a laboratory experiment which used gas as pore fluid medium. Experimental results show that in gas-pressured saturated rocks the Vp/Vs ratio, while remaining lower than values reported for liquid saturation conditions, increases with decreasing differential pressure, similarly to the trend observed in liquid saturated rocks.

Nutrient response of Bacopa monnieri (water hyssop) to varying degrees of soil saturation

USDA-ARS?s Scientific Manuscript database

Tissue concentrations of N and P were measured in Bacopa monnieri subjected to four progressive levels of flooding: well-drained Control, Intermittently Flooded, Partially Flooded, and Continuously Flooded. Soil redox potential (Eh) decreased in all flooded treatments at 30 cm depth, becoming anoxic...

Denitrification and gas emissions from organic soils under different water-table and flooding management

USDA-ARS?s Scientific Manuscript database

Draining the Florida Everglades for agricultural use has led to land subsidence and increase phosphorus loads to the southern Everglades, environmental concerns which can be limited by controlling water table depth. The resulting anaerobic conditions in saturated soils may lead to increased denitrif...

Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valin, R., E-mail: r.valinferreiro@swansea.ac.uk; Martinez, A., E-mail: a.e.Martinez@swansea.ac.uk; Barker, J. R., E-mail: john.barker@glasgow.ac.uk

In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. Thismore » effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias.« less

Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N-channel depletion MOSFETs

NASA Astrophysics Data System (ADS)

Gnana Prakash, A. P.; Pradeep, T. M.; Hegde, Vinayakprasanna N.; Pushpa, N.; Bajpai, P. K.; Patel, S. P.; Trivedi, Tarkeshwar; Bhushan, K. G.

2017-12-01

NPN transistors and N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 5 MeV protons and 60Co gamma radiation in the dose ranging from 1 Mrad(Si) to 100 Mrad(Si). The different electrical characteristics of the NPN transistor such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied as a function of total dose. The different electrical characteristics of N-channel MOSFETs such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (µ) and drain saturation current (IDSat) were studied systematically before and after irradiation in the same dose ranges. A considerable increase in the base current (IB) and decrease in the hFE, gm and collector saturation current (ICSat) were observed after irradiation in the case of the NPN transistor. In the N-channel MOSFETs, the ΔNit and ΔNot were found to increase and Vth, gm, µ and IDSat were found to decrease with increase in the radiation dose. The 5 MeV proton irradiation results of both the NPN transistor and N-channel MOSFETs were compared with 60Co gamma-irradiated devices in the same dose ranges. It was observed that the degradation in 5 MeV proton-irradiated devices is more when compared with the 60Co gamma-irradiated devices at higher total doses.

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

2003-01-01

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Enhanced performance of amorphous In-Ga-Zn-O thin-film transistors using different metals for source/drain electrodes

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-09-01

In this paper, we propose an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with off-planed source/drain electrodes. We applied different metals for the source/drain electrodes with Ni and Ti to control the work function as high and low. When we measured the configuration of Ni to drain and source to Ti, the a-IGZO TFT showed increased driving current, decreased leakage current, a high on/off current ratio, low subthreshold swing, and high mobility. In addition, we conducted a reliability test with a gate bias stress test at various temperatures. The results of the reliability test showed the Ni drain and Ti drain had an equivalent effective energy barrier height. Thus, we confirmed that the proposed off-planed structure improved the electrical characteristics of the fabricated devices without any degradation of characteristics. Through the a-IGZO TFT with different source/drain electrode metal engineering, we realized high-performance TFTs for next-generation display devices.

SONOS Nonvolatile Memory Cell Programming Characteristics

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2010-01-01

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Jaewook

2016-11-01

In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

Evaluation of wick drain performance in Virginia soils.

DOT National Transportation Integrated Search

2003-01-01

Prefabricated vertical drains (PVD), also known as wick drains, are commonly used to accelerate the consolidation of fine-grained soils in order to reduce future settlements and increase shear strength. Various drain designs are currently on the mark...

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

NASA Astrophysics Data System (ADS)

Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

1997-03-01

Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

High efficiency FET microwave detector design

NASA Astrophysics Data System (ADS)

Luglio, Juan; Ishii, Thomas Koryu

1990-12-01

The work is based on an assumption that very little microwave power would be consumed at a negatively biased gate of a microwave FET, yet significant detected signals would be obtained at the drain if the bias is given. By analyzing a Taylor-series expansion of the drain-current equation in the vicinity of a fixed gate-bias voltage, the bias voltage is found to maximize the second derivative of the drain current, the gate-bias voltage characteristic curve for the maximum detected drain current under a given fixed drain-bias voltage. Based on these findings, a high-efficiency microwave detector is designed, fabricated, and tested at 8.6 GHz, and it is shown that the audio power over absorbed microwave power ratio of the detector is 135 percent due to the positive gain.

A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design

NASA Astrophysics Data System (ADS)

Chien, Feng-Tso; Chen, Jian-Liang; Chen, Chien-Ming; Chen, Chii-Wen; Cheng, Ching-Hwa; Chiu, Hsien-Chin

2017-11-01

In this paper, a novel step gate-overlapped lightly doped drain (GOLDD) with raised source/drain (RSD) structure (SGORSD) is proposed for TFT electronic device application. The new SGORSD structure could obtain a low electric field at channel near the drain side owing to a step GOLDD design. Compared to the conventional device, the SGORSD TFT exhibits a better kink effect and higher breakdown performance due to the reduced drain electric field (D-EF). In addition, the leakage current also can be suppressed. Moreover, the device stability, such as the threshold voltage shift and drain current degradation under a high gate bias, is improved by the design of SGORSD structure. Therefore, this novel step GOLDD structure can be a promising design to be used in active-matrix flat panel electronics.

Frictional strength of wet and dry montmorillonite

USGS Publications Warehouse

Morrow, Carolyn A.; Moore, Diane E.; Lockner, David A.

2017-01-01

Montmorillonite is a common mineral in fault zones, and its low strength relative to other common gouge minerals is important in many models of fault rheology. However, the coefficient of friction, μ, varies with degree of saturation and is not well constrained in the literature due to the difficulty of establishing fully drained or fully dried states in the laboratory. We measured μ of both saturated and oven-dried montmorillonite at normal stresses up to 700 MPa. Care was taken to shear saturated samples slowly enough to avoid pore fluid overpressure. For saturated samples, μ increased from 0.10 to 0.28 with applied effective normal stress, while for dry samples μ decreased from 0.78 to 0.45. The steady state rate dependence of friction, (a − b), was positive, promoting stable sliding. The wide disparity in reported frictional strengths can be attributed to experimental procedures that promote differing degrees of partial saturation or overpressured pore fluid conditions.

Determination of field-effective soil properties in the tidewater region of North Carolina

Treesearch

J. McFero Grace; R.W. Skaggs

2013-01-01

Soils vary spatially in texture, structure, depth of horizons, and macropores, which can lead to a large variation in soil physical properties. In particular, saturated hydraulic conductivity (Ksat) and drainable porosity are critical properties required to model field hydrology in poorly drained lands. These soil-property values can be measured...

High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.

PubMed

Chen, Po-Chiang; Shen, Guozhen; Chen, Haitian; Ha, Young-geun; Wu, Chao; Sukcharoenchoke, Saowalak; Fu, Yue; Liu, Jun; Facchetti, Antonio; Marks, Tobin J; Thompson, Mark E; Zhou, Chongwu

2009-11-24

We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (approximately 1490 cm(2) V(-1) s(-1)), current on/off ratios (5.7 x 10(6)), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 microA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm(2) V(-1) s(-1) and 160 microA, respectively. All devices exhibit good optical transparency (approximately 81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated seven-segment AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature.

Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

NASA Astrophysics Data System (ADS)

Kale, Sumit; Kondekar, Pravin N.

2018-01-01

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

Decomposition of soil organic matter from boreal black spruce forest: Environmental and chemical controls

USGS Publications Warehouse

Wickland, K.P.; Neff, J.C.

2008-01-01

Black spruce forests are a dominant covertype in the boreal forest region, and they inhabit landscapes that span a wide range of hydrologic and thermal conditions. These forests often have large stores of soil organic carbon. Recent increases in temperature at northern latitudes may be stimulating decomposition rates of this soil carbon. It is unclear, however, how changes in environmental conditions influence decomposition in these systems, and if substrate controls of decomposition vary with hydrologic and thermal regime. We addressed these issues by investigating the effects of temperature, moisture, and organic matter chemical characteristics on decomposition of fibric soil horizons from three black spruce forest sites. The sites varied in drainage and permafrost, and included a "Well Drained" site where permafrost was absent, and "Moderately well Drained" and "Poorly Drained" sites where permafrost was present at about 0.5 m depth. Samples collected from each site were incubated at five different moisture contents (2, 25, 50, 75, and 100% saturation) and two different temperatures (10??C and 20??C) in a full factorial design for two months. Organic matter chemistry was analyzed using pyrolysis gas chromatography-mass spectrometry prior to incubation, and after incubation on soils held at 20??C, 50% saturation. Mean cumulative mineralization, normalized to initial carbon content, ranged from 0.2% to 4.7%, and was dependent on temperature, moisture, and site. The effect of temperature on mineralization was significantly influenced by moisture content, as mineralization was greatest at 20??C and 50-75% saturation. While the relative effects of temperature and moisture were similar for all soils, mineralization rates were significantly greater for samples from the "Well Drained" site compared to the other sites. Variations in the relative abundances of polysaccharide-derivatives and compounds of undetermined source (such as toluene, phenol, 4-methyl phenol, and several unidentifiable compounds) could account for approximately 44% of the variation in mineralization across all sites under ideal temperature and moisture conditions. Based on our results, changes in temperature and moisture likely have similar, additive effects on in situ soil organic matter (SOM) decomposition across a wide range of black spruce forest systems, while variations in SOM chemistry can lead to significant differences in decomposition rates within and among forest sites. ?? 2007 Springer Science+Business Media B.V.

Development and validation of a runoff and erosion model for lowland drained catchments

NASA Astrophysics Data System (ADS)

Grangeon, Thomas; Cerdan, Olivier; Vandromme, Rosalie; Landemaine, Valentin; Manière, Louis; Salvador-Blanes, Sébastien; Foucher, Anthony; Evrard, Olivier

2017-04-01

Modelling water and sediment transfer in lowland catchments is complex as both hortonian and saturation excess-flow occur in these environments. Moreover, their dynamics was complexified by the installation of tile drainage networks or stream redesign. To the best of our knowledge, few models are able to simulate saturation runoff as well as hortonian runoff in tile-drained catchments. Most of the time, they are used for small scale applications due to their high degree of complexity. In this context, a model of intermediate complexity was developed to simulate the hydrological and erosion processes at the catchment scale in lowland environments. This GIS-based, spatially distributed and lumped model at the event scale uses a theoretical hydrograph to approximate within-event temporal variations. It comprises two layers used to represent surface and subsurface transfers. Observations of soil surface characteristics (i.e. vegetation density, soil crusting and roughness) were used to document spatial variations of physical soil characteristics (e.g. infiltration capacity). Flow was routed depending on the local slope, using LIDAR elevation data. Both the diffuse and the gully erosion are explicitly described. The model ability to simulate water and sediment dynamics at the catchment scale was evaluated using the monitoring of a selection of flood events in a small, extensively cultivated catchment (the Louroux catchment, Loire River basin, central France; 25 km2). In this catchment, five monitoring stations were equipped with water level sensors, turbidity probes, and automatic samplers. Discharge and suspended sediment concentration were deduced from field measurements. One station was installed at the outlet of a tile drain and was used to parameterize fluxes supplied by the drainage network. The selected floods were representative of various rainfall and soil surface conditions (e.g. low-intensity rainfall occurring on saturated soils as well as intense rainfall occurring on dry soils in spring). The model was able to reproduce the runoff volumes for these different situations, and performed well, especially in winter (the relationship between observed and modeled values has R2=0.72) when most of the sediment are transferred. Therefore, future work will evaluate the model ability to reproduce the erosion and sediment dynamics in this catchment in order to provide a tool for sediment management in these lowland environments draining agricultural land where river siltation is problematic.

Tunneling contact IGZO TFTs with reduced saturation voltages

NASA Astrophysics Data System (ADS)

Wang, Longyan; Sun, Yin; Zhang, Xintong; Zhang, Lining; Zhang, Shengdong; Chan, Mansun

2017-04-01

We report a tunneling contact indium-gallium-zinc oxide (IGZO) thin film transistor (TFT) with a graphene interlayer technique in this paper. A Schottky junction is realized between a metal and IGZO with a graphene interlayer, leading to a quantum tunneling of the TFT transport in saturation regions. This tunneling contact enables a significant reduction in the saturation drain voltage Vdsat compared to that of the thermionic emission TFTs, which is usually equal to the gate voltage minus their threshold voltages. Measured temperature independences of the subthreshold swing confirm a transition from the thermionic emission to quantum tunneling transports depending on the gate bias voltages in the proposed device. The tunneling contact TFTs with the graphene interlayer have implications to reduce the power consumptions of certain applications such as the active matrix OLED display.

Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

NASA Astrophysics Data System (ADS)

Garg, Shelly; Saurabh, Sneh

2018-01-01

In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demonstrate the superiority of the DP technique over the existing techniques in controlling the ambipolar current. In particular, the addition of DP to a TFET is able to fully suppress the ambipolar current even when TFET is biased at high negative gate voltages and drain doping is kept as high as the source doping. Moreover, adding DP is complementary to the well-known technique of employ-ing source-pocket (SP) in a TFET since both need similar doping type and doping concentration.

Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

DOEpatents

Turner, Steven Richard

2006-12-26

A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

Modeling of Metal-Ferroelectric-Semiconductor Field Effect Transistors

NASA Technical Reports Server (NTRS)

Duen Ho, Fat; Macleod, Todd C.

1998-01-01

The characteristics for a MFSFET (metal-ferroelectric-semiconductor field effect transistor) is very different than a conventional MOSFET and must be modeled differently. The drain current has a hysteresis shape with respect to the gate voltage. The position along the hysteresis curve is dependent on the last positive or negative polling of the ferroelectric material. The drain current also has a logarithmic decay after the last polling. A model has been developed to describe the MFSFET drain current for both gate voltage on and gate voltage off conditions. This model takes into account the hysteresis nature of the MFSFET and the time dependent decay. The model is based on the shape of the Fermi-Dirac function which has been modified to describe the MFSFET's drain current. This is different from the model proposed by Chen et. al. and that by Wu.

A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime

NASA Astrophysics Data System (ADS)

Yu, Fei; Ma, Xiaoyu; Deng, Wanling; Liou, Juin J.; Huang, Junkai

2017-11-01

A physics-based drain current compact model for amorphous InGaZnO (a-InGaZnO) thin-film transistors (TFTs) is proposed. As a key feature, the surface potential model accounts for both exponential tail and deep trap densities of states, which are essential to describe a-InGaZnO TFT electrical characteristics. The surface potential is solved explicitly without the process of amendment and suitable for circuit simulations. Furthermore, based on the surface potential, an explicit closed-form expression of the drain current is developed. For the cases of the different operational voltages, surface potential and drain current are verified by numerical results and experimental data, respectively. As a result, our model can predict DC characteristics of a-InGaZnO TFTs.

Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

NASA Astrophysics Data System (ADS)

Swami, Yashu; Rai, Sanjeev

2017-02-01

The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in nano-MOSFET circuits as threshold voltage, channel length, and gate oxide thickness are scaled down to nano-meter range. Precise leakage current valuation and meticulous modeling of the same at nano-meter technology scale is an increasingly a critical work in designing the low power nano-MOSFET circuits. We present a specific compact model for sub-threshold regime leakage current in bulk driven nano-MOSFETs. The proposed logical model is instigated and executed into the latest updated PTM bulk nano-MOSFET model and is found to be in decent accord with technology-CAD simulation data. This paper also reviews various transistor intrinsic leakage mechanisms for nano-MOSFET exclusively in weak inversion, like drain-induced barricade lowering (DIBL), gate-induced drain leakage (GIDL), gate oxide tunneling (GOT) leakage etc. The root cause of the sub-surface leakage current is mainly due to the nano-scale short channel length causing source-drain coupling even in sub-threshold domain. Consequences leading to carriers triumphing the barricade between the source and drain. The enhanced model effectively considers the following parameter dependence in the account for better-quality value-added results like drain-to-source bias (VDS), gate-to-source bias (VGS), channel length (LG), source/drain junction depth (Xj), bulk doping concentration (NBULK), and operating temperature (Top).

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

2017-11-01

Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

Quantification of soil water retention parameters using multi-section TDR-waveform analysis

NASA Astrophysics Data System (ADS)

Baviskar, S. M.; Heimovaara, T. J.

2017-06-01

Soil water retention parameters are important for describing flow in variably saturated soils. TDR is one of the standard methods used for determining water content in soil samples. In this study, we present an approach to estimate water retention parameters of a sample which is initially saturated and subjected to an incremental decrease in boundary head causing it to drain in a multi-step fashion. TDR waveforms are measured along the height of the sample at assumed different hydrostatic conditions at daily interval. The cumulative discharge outflow drained from the sample is also recorded. The saturated water content is obtained using volumetric analysis after the final step involved in multi-step drainage. The equation obtained by coupling the unsaturated parametric function and the apparent dielectric permittivity is fitted to a TDR wave propagation forward model. The unsaturated parametric function is used to spatially interpolate the water contents along TDR probe. The cumulative discharge outflow data is fitted with cumulative discharge estimated using the unsaturated parametric function. The weight of water inside the sample estimated at the first and final boundary head in multi-step drainage is fitted with the corresponding weights calculated using unsaturated parametric function. A Bayesian optimization scheme is used to obtain optimized water retention parameters for these different objective functions. This approach can be used for samples with long heights and is especially suitable for characterizing sands with a uniform particle size distribution at low capillary heads.

Hydrobiogeochemical interactions in 'anoxic' limestone drains for neutralization of acidic mine drainage

USGS Publications Warehouse

Robbins, E.I.; Cravotta, C.A.; Savela, C.E.; Nord, G.L.

1999-01-01

Processes affecting neutralization of acidic coal mine drainage were evaluated within 'anoxic' limestone drains (ALDs). Influents had pH???3.5 and dissolved oxygen <2 mg/l. Even though effluents were near neutral (pH 6 and alkalinity acidity), two of the four ALDs were failing due to clogging. Mineral-saturation indices indicated the potential for dissolution of calcite and gypsum, and precipitation of Al3+ and Fe3+ compounds. Cleavage mounts of calcite and gypsum that were suspended within the ALDs and later examined microscopically showed dissolution features despite coatings by numerous bacteria, biofilms, and Fe-Al-Si precipitates. In the drain exhibiting the greatest flow reduction, Al-hydroxysulfates had accumulated on limestone surfaces and calcite etch points, thus causing the decline in transmissivity and dissolution. Therefore, where Al loadings are high and flow rates are low, a pre-treatment step is indicated to promote Al removal before diverting acidic mine water into alkalinity-producing materials. ?? 1998 Elsevier Science Ltd.

The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

NASA Astrophysics Data System (ADS)

Kim, Miryeon; Sun, Wookyung; Kang, Jongseuk; Shin, Hyungsoon

2017-08-01

The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified.

An analytical drain current model for symmetric double-gate MOSFETs

NASA Astrophysics Data System (ADS)

Yu, Fei; Huang, Gongyi; Lin, Wei; Xu, Chuanzhong

2018-04-01

An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson's equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson's equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

Method and system for reducing device performance degradation of organic devices

DOEpatents

Teague, Lucile C.

2014-09-02

Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.

Dual drain MOSFET detector for crosstie memory systems

NASA Astrophysics Data System (ADS)

Bluzer, N.

1985-03-01

This patent application, which discloses a circuit for detecting binary information in crosstie memory systems includes a dual drain MOSFET device having a single channel with a common source and an integrated, thin-film strip of magnetic material suitable for the storage and propagation of Bloch line-crosstie pairs acting as both a shift register and the device's gate. Current flowing through the device, in the absence of a magnetic field, is equally distributed to each drain; however, changing magnetic fields, normal to the plane of the device and generated by Bloch line-crosstie pairs in the strip, interact with the current such that a distribution imbalance exists and one drain or the other receives a disproportionate fraction of the current depending upon the direction of the magnetic field.

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Chen, Te-Chih; Lin, Kun-Yao; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

2013-07-01

This letter investigates the effect of temperature on hot-carrier stress-induced degradation behavior in InGaZnO thin film transistors. After hot-carrier stress at 25 °C, serious on-current and subthreshold swing degradations are observed due to trap state generation near the drain side. For identical stress performed at elevated temperatures, current degradation in the I-V transfer curve under reverse mode is gradually suppressed and the anomalous hump in the gate-to-drain capacitance-voltage curve becomes more severe. These suppressed degradations and the more severe hump can be both attributed to hole-trapping near the drain side due to high drain bias at high temperature.

The nitrate response of a lowland catchment and groundwater travel times

NASA Astrophysics Data System (ADS)

van der Velde, Ype; Rozemeijer, Joachim; de Rooij, Gerrit; van Geer, Frans

2010-05-01

Intensive agriculture in lowland catchments causes eutrophication of downstream waters. To determine effective measures to reduce the nutrient loads from upstream lowland catchments, we need to understand the origin of long-term and daily variations in surface water nutrient concentrations. Surface water concentrations are often linked to travel time distributions of water passing through the saturated and unsaturated soil of the contributing catchment. This distribution represents the contact time over which sorption, desorption and degradation takes place. However, travel time distributions are strongly influenced by processes like tube drain flow, overland flow and the dynamics of draining ditches and streams and therefore exhibit strong daily and seasonal variations. The study we will present is situated in the 6.6 km2 Hupsel brook catchment in The Netherlands. In this catchment nitrate and chloride concentrations have been intensively monitored for the past 26 years under steadily decreasing agricultural inputs. We described the complicated dynamics of subsurface water fluxes as streams, ditches and tube drains locally switch between active or passive depending on the ambient groundwater level by a groundwater model with high spatial and temporal resolutions. A transient particle tracking approach is used to derive a unique catchment-scale travel time distribution for each day during the 26 year model period. These transient travel time distributions are not smooth distributions, but distributions that are strongly spiked reflecting the contribution of past rainfall events to the current discharge. We will show that a catchment-scale mass response function approach that only describes catchment-scale mixing and degradation suffices to accurately reproduce observed chloride and nitrate surface water concentrations as long as the mass response functions include the dynamics of travel time distributions caused by the highly variable connectivity of the surface water network.

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

NASA Astrophysics Data System (ADS)

Naderi, Ali

2017-12-01

In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

Investigation of guided wave propagation and attenuation in pipe buried in sand

NASA Astrophysics Data System (ADS)

Leinov, Eli; Lowe, Michael J. S.; Cawley, Peter

2015-07-01

Long-range guided wave testing is a well-established method for detection of corrosion defects in pipelines. The method is currently used routinely for above ground pipelines in a variety of industries, e.g. petrochemical and energy. When the method is applied to pipes buried in soil, test ranges tend to be significantly compromised and unpredictable due to attenuation of the guided wave resulting from energy leakage into the embedding soil. The attenuation characteristics of guided wave propagation in an 8 in. pipe buried in sand are investigated using a laboratory full-scale experimental rig and model predictions. We report measurements of attenuation of the T(0,1) and L(0,2) guided wave modes over a range of sand conditions, including loose, compacted, mechanically compacted, water saturated and drained. Attenuation values are found to be in the range of 1.65-5.5 dB/m and 0.98-3.2 dB/m for the torsional and longitudinal modes, respectively, over the frequency of 11-34 kHz. The application of overburden pressure modifies the compaction of the sand and increases the attenuation. Mechanical compaction of the sand yields similar attenuation values to those obtained with applied overburden pressure. The attenuation decreases in the fully water-saturated sand, and increases in drained sand to values comparable with those obtained for compacted sand. Attenuation measurements are compared with Disperse software model predictions and confirm that the attenuation phenomenon in buried pipes is essentially governed by the bulk shear velocity in the sand. The attenuation behaviour of the torsional guided wave mode is found not to be captured by a uniform soil model; comparison with predictions obtained with the Disperse software suggest that this is likely to be due to a layer of sand adhering to the surface of the pipe.

Structural tuning of nanogaps using electromigration induced by field emission current with bipolar biasing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yagi, Mamiko; Ito, Mitsuki; Shirakashi, Jun-ichi, E-mail: shrakash@cc.tuat.ac.jp

We report a new method for fabrication of Ni nanogaps based on electromigration induced by a field emission current. This method is called “activation” and is demonstrated here using a current source with alternately reversing polarities. The activation procedure with alternating current bias, in which the current source polarity alternates between positive and negative bias conditions, is performed with planar Ni nanogaps defined on SiO{sub 2}/Si substrates at room temperature. During negative biasing, a Fowler-Nordheim field emission current flows from the source (cathode) to the drain (anode) electrode. The Ni atoms at the tip of the drain electrode are thusmore » activated and then migrate across the gap from the drain to the source electrode. In contrast, in the positive bias case, the field emission current moves the activated atoms from the source to the drain electrode. These two procedures are repeated until the tunnel resistance of the nanogaps is successively reduced from 100 TΩ to 48 kΩ. Scanning electron microscopy and atomic force microscopy studies showed that the gap separation narrowed from approximately 95 nm to less than 10 nm because of the Ni atoms that accumulated at the tips of both the source and drain electrodes. These results show that the alternately biased activation process, which is a newly proposed atom transfer technique, can successfully control the tunnel resistance of the Ni nanogaps and is a suitable method for formation of ultrasmall nanogap structures.« less

Distribution of selenium in soils of agricultural fields, western San Joaquin Valley, California

USGS Publications Warehouse

Fujii, Roger; Deverel, S.J.; Hatfield, D.B.

1988-01-01

Soils from three agricultural fields in the Panoche Creek alluvial fan area in the western San Joaquin Valley, California, were analyzed for soluble, adsorbed, and total concentrations of selenium (Se) to assess the distribution and forms of Se in relation to the leaching of Se from soils. This assessment is needed to evaluate the importance of soil Se in affecting ground water concentrations. Soil samples were collected from three fields with drainage systems of different ages (6, 15, 1.5 yr) and different Se concentrations in drain water (58, 430, 3700 µg L−1, respectively). Concentrations of soluble Se and salinity were highest in soils from the field drained for 1.5 yr and lowest in the field drained for 6 yr. Of the total concentration of soil Se from all three fields, the proportion of adsorbed and soluble Se ranged from 1 to 11% and 2 > 0.68) in saturation extracts of soils sampled from below the water table. In contrast, most soluble salts and Se apparently have been leached from the unsaturated soils in the fields drained for 6 and 15 yr. For the leached soils, dissolution and precipitation of evaporite minerals containing Se may no longer control concentrations of soluble Se.

Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

NASA Astrophysics Data System (ADS)

Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

Geotechnical properties of core sample from methane hydrate deposits in Eastern Nankai Trough

NASA Astrophysics Data System (ADS)

Yoneda, J.; Masui, A.; Egawa, K.; Konno, Y.; Ito, T.; Kida, M.; Jin, Y.; Suzuki, K.; Nakatsuka, Y.; Tenma, N.; Nagao, J.

2013-12-01

To date, MH extraction has been simulated in several ways to help ensure the safe and efficient production of gas, with a particular focus on the investigation of landsliding, uneven settlement, and production well integrity. The mechanical properties of deep sea sediments and gas-hydrate-bearing sediments, typically obtained through material tests, are essential for the geomechanical response simulation to hydrate extraction. We conducted triaxial compression tests and the geotechnical properties of the sediments was investigated. Consolidated undrained compression tests were performed for silty sediments. And consolidated drained tests were performed for sandy samples. In addition, permeability was investigated from isotropic consolidation results. These core samples recovered from methane hydrate deposits of Daini Atsumi Knoll in Eastern Nankai Trough during the 2012 JOGMEC/JAPEX Pressure coring operation. The pressure core samples were rapidly depressurized on the ship and it were frozen using liquid nitrogen to prevent MH dissociation. Undrained shear strength of the core samples increase linearly with depth from sea floor. These core samples should be normally consolidated sample in-situ. Drained shear strength increases dramatically with hydrate saturation increases. Peak stress ratio q/p' of the core sample which has 73% of hydrate saturation was approximately 2.0 and it decrease down to 1.3 at the critical state. Dilatancy also changed from compressive tendency to dilative tendency with hydrate saturation increase. This study was financially supported by the Research Consortium for Methane Hydrate Resources in Japan (MH21 Research Consortium) that carries out Japan's Methane Hydrate R&D Program conducted by the Ministry of Economy, Trade and Industry (METI).

High-frequency self-aligned graphene transistors with transferred gate stacks.

PubMed

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-07-17

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra-high-frequency circuits.

Saturation-dependent solute dispersivity in porous media: Pore-scale processes

NASA Astrophysics Data System (ADS)

Raoof, A.; Hassanizadeh, S. M.

2013-04-01

It is known that in variably saturated porous media, dispersion coefficient depends on Darcy velocity and water saturation. In one-dimensional flow, it is commonly assumed that the dispersion coefficient is a linear function of velocity. The coefficient of proportionality, called the dispersivity, is considered to depend on saturation. However, there is not much known about its dependence on saturation. In this study, we investigate, using a pore network model, how the longitudinal dispersivity varies nonlinearly with saturation. We schematize the porous medium as a network of pore bodies and pore throats with finite volumes. The pore space is modeled using the multidirectional pore-network concept, which allows for a distribution of pore coordination numbers. This topological property together with the distribution of pore sizes are used to mimic the microstructure of real porous media. The dispersivity is calculated by solving the mass balance equations for solute concentration in all network elements and averaging the concentrations over a large number of pores. We have introduced a new formulation of solute transport within pore space, where we account for different compartments of residual water within drained pores. This formulation makes it possible to capture the effect of limited mixing due to partial filling of the pores under variably saturated conditions. We found that dispersivity increases with the decrease in saturation, it reaches a maximum value, and then decreases with further decrease in saturation. To show the capability of our formulation to properly capture the effect of saturation on solute dispersion, we applied it to model the results of a reported experimental study.

Accounting for the risks of phosphorus losses through tile drains in a phosphorus index.

PubMed

Reid, D Keith; Ball, Bonnie; Zhang, T Q

2012-01-01

Tile drainage systems have been identified as a significant conduit for phosphorus (P) losses to surface water, but P indices do not currently account for this transport pathway in a meaningful way. Several P indices mention tile drains, but most account for either the reduction in surface runoff or the enhanced transport through tiles rather than both simultaneously. A summary of the current state of how tile drains are accounted for within P indices is provided, and the challenges in predicting the risk of P losses through tile drains that are relative to actual losses are discussed. A framework for a component P Index is described, along with a proposal to incorporate predictions of losses through tile drains as a component within this framework. Options for calibrating and testing this component are discussed. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Goto, Ken; Morikawa, Yoji; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

2018-06-01

A vertical β-Ga2O3 metal–oxide–semiconductor field-effect transistor featuring a planar-gate architecture is presented. The device was fabricated by an all-ion-implanted process without requiring trench etching or epitaxial regrowth. A Mg-ion-implanted current blocking layer (CBL) provided electrical isolation between the source and the drain except at an aperture opening through which drain current was conducted. Successful transistor action was realized by gating a Si-ion-implanted channel above the CBL. Thermal diffusion of Mg induced a large source–drain leakage current through the CBL, which resulted in compromised off-state device characteristics as well as a reduced peak extrinsic transconductance compared with the results of simulations.

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

PubMed

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Drain site evisceration of fallopian tube, another reason to discourage abdominal drain: report of a case and brief review of literature.

PubMed

Saini, Pradeep; Faridi, M S; Agarwal, Nitin; Gupta, Arun; Kaur, Navneet

2012-04-01

Placement of a drain following abdominal surgery is common despite a lack of convincing evidence in the current literature to support this practice. The use of intra-abdominal drain is associated with many potential and serious complications. We report a drain site evisceration of the right fallopian tube after the removal of an intra-abdominal drain. The drain was placed in the right iliac fossa in a patient who underwent a lower segment Caesarean section (LSCS) for meconium liquor with fetal distress. The Pfannenstiel incision made for LSCS was reopened and the protruding inflamed fimbrial end of the right fallopian tube was excised. The patient made an uneventful recovery. Routine intra-abdominal prophylactic drain following an abdominal surgery including LSCS should be discouraged.

Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein.

PubMed

Park, Keun-Yong; Kim, Min-Suk; Choi, Sie-Young

2005-04-15

A metal oxide silicon field effect transistor (MOSFET) protein chip for the easy detection of protein was fabricated and its characteristics were investigated. Generally, the drain current of the MOSFET is varied by the gate potential. It is expected that the formation of an antibody-antigen complex on the gate of MOSFET would lead to a detectable change in the charge distribution and thus, directly modulate the drain current of MOSFET. As such, the drain current of the MOSFET protein chip can be varied by ribosomal proteins absorbed by the self-assembled monolayer (SAM) immobilized on the gate (Au) surface, as ribosomal protein has positive charge, and these current variations then used as the response of the protein chip. The gate of MOSFET protein chip is not directly biased by an external voltage source, so called open gate or floating gate MOSFET, but rather chemically modified by immobilized molecular receptors called self-assembled monolayer (SAM). In our experiments, the current variation in the proposed protein chip was about 8% with a protein concentration of 0.7 mM. As the protein concentration increased, the drain current also gradually increased. In addition, there were some drift of the drain current in the device. It is considered that these drift might be caused by the drift from the MOSFET itself or protein absorption procedures that are relied on the facile attachment of thiol (-S) ligands to the gate (Au) surface. We verified the formation of SAM on the gold surface and the absorption of protein through the surface plasmon resonance (SPR) measurement.

Study of the variation of thermal conductivity with water saturation using nuclear magnetic resonance

NASA Astrophysics Data System (ADS)

Jorand, Rachel; Fehr, Annick; Koch, Andreas; Clauser, Christoph

2011-08-01

In this paper, we present a method that allows one to correct thermal conductivity measurements for the effect of water loss when extrapolating laboratory data to in situ conditions. The water loss in shales and unconsolidated rocks is a serious problem that can introduce errors in the characterization of reservoirs. For this study, we measure the thermal conductivity of four sandstones with and without clay minerals according to different water saturation levels using an optical scanner. Thermal conductivity does not decrease linearly with water saturation. At high saturation and very low saturation, thermal conductivity decreases more quickly because of spontaneous liquid displacement and capillarity effects. Apart from these two effects, thermal conductivity decreases quasi-linearly. We also notice that the samples containing clay minerals are not completely drained, and thermal conductivity reaches a minimum value. In order to fit the variation of thermal conductivity with the water saturation as a whole, we used modified models commonly presented in thermal conductivity studies: harmonic and arithmetic mean and geometric models. These models take into account different types of porosity, especially those attributable to the abundance of clay, using measurements obtained from nuclear magnetic resonance (NMR). For argillaceous sandstones, a modified arithmetic-harmonic model fits the data best. For clean quartz sandstones under low water saturation, the closest fit to the data is obtained with the modified arithmetic-harmonic model, while for high water saturation, a modified geometric mean model proves to be the best.

Simulation study of short-channel effects of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro; Matsukawa, Takashi

2018-04-01

Short-channel effects of tunnel field-effect transistors (FETs) are investigated in detail using simulations of a nonlocal band-to-band tunneling model. Discussion is limited to silicon. Several simulation scenarios were considered to address different effects, such as source overlap and drain offset effects. Adopting the drain offset to suppress the drain leakage current suppressed the short channel effects. The physical mechanism underlying the short-channel behavior of the tunnel FETs (TFETs) was very different from that of metal-oxide-semiconductor FETs (MOSFETs). The minimal gate lengths that do not lose on-state current by one order are shown to be 3 nm for single-gate structures and 2 nm for double gate structures, as determined from the drain offset structure.

Greenhouse gases emission from the sewage draining rivers.

PubMed

Hu, Beibei; Wang, Dongqi; Zhou, Jun; Meng, Weiqing; Li, Chongwei; Sun, Zongbin; Guo, Xin; Wang, Zhongliang

2018-01-15

Carbon dioxide (CO 2 ), methane (CH 4 ) and nitrous oxide (N 2 O) concentration, saturation and fluxes in rivers (Beitang drainage river, Dagu drainage rive, Duliujianhe river, Yongdingxinhe river and Nanyunhe river) of Tianjin city (Haihe watershed) were investigated during July and October in 2014, and January and April in 2015 by static headspace gas chromatography method and the two-layer model of diffusive gas exchange. The influence of environmental variables on greenhouse gases (GHGs) concentration under the disturbance of anthropogenic activities was discussed by Spearman correlative analysis and multiple stepwise regression analysis. The results showed that the concentration and fluxes of CO 2 , CH 4 and N 2 O were seasonally variable with >winter>fall>summer, spring>summer>winter>fall and summer>spring>winter>fall for concentrations and spring>summer>fall>winter, spring>summer>winter>fall and summer>spring>fall>winter for fluxes respectively. The GHGs concentration and saturation were higher in comprehensively polluted river sites and lower in lightly polluted river sites. The three GHGs emission fluxes in two sewage draining rivers of Tianjin were clearly higher than those of other rivers (natural rivers) and the spatial variation of CH 4 was more obvious than the others. CO 2 and N 2 O air-water interface emission fluxes of the sewage draining rivers in four seasons were about 1.20-2.41 times and 1.13-3.12 times of those in the natural rivers. The CH 4 emission fluxes of the sewage draining rivers were 3.09 times in fall to 10.87 times in spring of those in the natural rivers in different season. The wind speed, water temperature and air temperature were related to GHGs concentrations. Nitrate and nitrite (NO 3 - +NO 2 - -N) and ammonia (NH 4 + -N) were positively correlated with CO 2 concentration and CH 4 concentration; and dissolved oxygen (DO) concentration was negatively correlated with CH 4 concentration and N 2 O concentration. The effect of human activities on carbon and nitrogen cycling in river is great. Copyright © 2017 Elsevier B.V. All rights reserved.

High Performance 0.1 μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77 GHz Car Radar Applications

NASA Astrophysics Data System (ADS)

Kim, Sungwon; Noh, Hunhee; Jang, Kyoungchul; Lee, JaeHak; Seo, Kwangseok

2005-04-01

In this study, 0.1 μm double-recessed T-gate GaAs pseudomorphic high electron mobility transistors (PHEMT’s), in which an InGaAs layer and a Si pulse-doped layer in the cap structure are inserted, have been successfully fabricated. This cap structure improves ohmic contact. The ohmic contact resistance is as small as 0.07 Ωmm, consequently the source resistance is reduced by about 20% compared to that of a conventional cap structure. This device shows good DC and microwave performance such as an extrinsic transconductance of 620 mS/mm, a maximum saturated drain current of 780 mA/mm, a cut-off frequency fT of 140 GHz and a maximum oscillation frequency of 260 GHz. The reverse breakdown is 5.7 V at a gate current density of 1 mA/mm. The maximum available gain is about 7 dB at 77 GHz. It is well suited for car radar monolithic microwave integrated circuits (MMICs).

Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

NASA Astrophysics Data System (ADS)

Jiahui, Zhou; Hudong, Chang; Xufang, Zhang; Jingzhi, Yang; Guiming, Liu; Haiou, Li; Honggang, Liu

2016-02-01

A novel radio frequency (RF) switch device has been successfully fabricated using InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/mm, a turn-on resistance of 0.72 mω·mm2 and a drain current on-off (Ion/Ioff) ratio of 1 × 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6 As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

NASA Astrophysics Data System (ADS)

Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga N.; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George D.

2016-12-01

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2-2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of 0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10-6 A/mm ( V gs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed.

Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

NASA Astrophysics Data System (ADS)

Ishii, Hajime; Ueno, Hiroaki; Ueda, Tetsuzo; Endoh, Tetsuo

2018-06-01

In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (I dmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% I dmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (g m) peak of the g m–V g characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

Integrating Partial Polarization into a Metal-Ferroelectric-Semiconductor Field Effect Transistor Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

The ferroelectric channel in a Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFSFET) can partially change its polarization when the gate voltage near the polarization threshold voltage. This causes the MFSFET Drain current to change with repeated pulses of the same gate voltage near the polarization threshold voltage. A previously developed model [11, based on the Fermi-Dirac function, assumed that for a given gate voltage and channel polarization, a sin-le Drain current value would be generated. A study has been done to characterize the effects of partial polarization on the Drain current of a MFSFET. These effects have been described mathematically and these equations have been incorporated into a more comprehensive mathematical model of the MFSFET. The model takes into account the hysteresis nature of the MFSFET and the time dependent decay as well as the effects of partial polarization. This model defines the Drain current based on calculating the degree of polarization from previous gate pulses, the present Gate voltage, and the amount of time since the last Gate volta-e pulse.

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

NASA Astrophysics Data System (ADS)

Kim, Jungsik; Oh, Hyeongwan; Kim, Jiwon; Meyyappan, M.; Lee, Jeong-Soo

2017-02-01

Effects of using asymmetric channel thickness in tunneling field-effect transistors (TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) simulations. As the thickness of the source side becomes narrower in narrow-source wide-drain (NSWD) TFETs, the threshold voltage (V th) and the subthreshold swing (SS) decrease due to enhanced gate controllability of the source side. The narrow source thickness can make the band-to-band tunneling (BTBT) distance shorter and induce much higher electric field near the source junction at the on-state condition. In contrast, in a TFET with wide-source narrow-drain (WSND), the SS shows almost constant values and the V th slightly increases with narrowing thickness of the drain side. In addition, the ambipolar current can rapidly become larger with smaller thickness on the drain side because of the shorter BTBT distance and the higher electric-field at the drain junction. The on-current of the asymmetric channel TFET is lower than that of conventional TFETs due to the volume limitation of the NSWD TFET and high series resistance of the WSND TFET. The on-current is almost determined by the channel thickness of the source side.

Soil magnetic susceptibility: A quantitative proxy of soil drainage for use in ecological restoration

USGS Publications Warehouse

Grimley, D.A.; Wang, J.-S.; Liebert, D.A.; Dawson, J.O.

2008-01-01

Flooded, saturated, or poorly drained soils are commonly anaerobic, leading to microbially induced magnetite/maghemite dissolution and decreased soil magnetic susceptibility (MS). Thus, MS is considerably higher in well-drained soils (MS typically 40-80 ?? 10-5 standard international [SI]) compared to poorly drained soils (MS typically 10-25 ?? 10-5 SI) in Illinois, other soil-forming factors being equal. Following calibration to standard soil probings, MS values can be used to rapidly and precisely delineate hydric from nonhydric soils in areas with relatively uniform parent material. Furthermore, soil MS has a moderate to strong association with individual tree species' distribution across soil moisture regimes, correlating inversely with independently reported rankings of a tree species' flood tolerance. Soil MS mapping can thus provide a simple, rapid, and quantitative means for precisely guiding reforestation with respect to plant species' adaptations to soil drainage classes. For instance, in native woodlands of east-central Illinois, Quercus alba , Prunus serotina, and Liriodendron tulipifera predominantly occur in moderately well-drained soils (MS 40-60 ?? 10-5 SI), whereas Acer saccharinum, Carya laciniosa, and Fraxinus pennsylvanica predominantly occur in poorly drained soils (MS <20 ?? 10-5 SI). Using a similar method, an MS contour map was used to guide restoration of mesic, wet mesic, and wet prairie species to pre-settlement distributions at Meadowbrook Park (Urbana, IL, U.S.A.). Through use of soil MS maps calibrated to soil drainage class and native vegetation occurrence, restoration efforts can be conducted more successfully and species distributions more accurately reconstructed at the microecosystem level. ?? 2008 Society for Ecological Restoration International.

Controlling the ambipolarity and improvement of RF performance using Gaussian Drain Doped TFET

NASA Astrophysics Data System (ADS)

Nigam, Kaushal; Gupta, Sarthak; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

2018-05-01

Ambipolar conduction in tunnel field-effect transistors (TFETs) has been occurred as an inherent issue due to drain-channel tunneling. It makes TFET less efficient and restricts its application in complementary digital circuits. Therefore, this manuscript reports the application of Gaussian doping profile on nanometer regime silicon channel TFETs to completely eliminate the ambipolarity. For this, Gaussian doping is used in the drain region of conventional gate-drain overlap TFET to control the tunneling of electrons from the valence band of channel to the conduction band of drain. As a result, barrier width at the drain/channel junction increases significantly leading to the suppression of an ambipolar current even when higher doping concentration (1 ? 10 ? cm ?) is considered in the drain region. However, significant improvement in terms of RF figure-of-merits such as cut-off frequency (f ?), gain bandwidth product (GBW), and gate-to-drain capacitance (C ?) is achieved with Gaussian doped gate on drain overlap TFET as compared to its counterpart TFET.

Two dimensional hydrological simulation in elastic swelling/shrinking peat soils

NASA Astrophysics Data System (ADS)

Camporese, M.; Ferraris, S.; Paniconi, C.; Putti, M.; Salandin, P.; Teatini, P.

2005-12-01

Peatlands respond to natural hydrologic cycles of precipitation and evapotranspiration with reversible deformations due to variations of water content in both the unsaturated and saturated zone. This phenomenon results in short-term vertical displacements of the soil surface that superimpose to the irreversible long-term subsidence naturally occurring in drained cropped peatlands because of bio-oxidation of the organic matter. The yearly sinking rates due to the irreversible process are usually comparable with the short-term deformation (swelling/shrinkage) and the latter must be evaluated to achieve a thorough understanding of the whole phenomenon. A mathematical model describing swelling/shrinkage dynamics in peat soils under unsaturated conditions has been derived from simple physical considerations, and validated by comparison with laboratory shrinkage data. The two-parameter model relates together the void and moisture ratios of the soil. This approach is implemented in a subsurface flow model describing variably saturated porous media flow (Richards' equation), by means of an appropriate modification of the general storage term. The contribution of the saturated zone to total deformation is considered by using information from the elastic storage coefficient. Simulations have been carried out for a drained cropped peatland south of the Venice Lagoon (Italy), for which a large data set of hydrological and deformation measurements has been collected since the end of 2001. The considered domain is representative of a field section bounded by ditches, subject to rainfall and evapotranspiration. The comparison between simulated and measured quantities demonstrates the capability of the model to accurately reproduce both the hydrological and deformation dynamics of peat, with values of the relevant parameters that are in good agreement with the literature.

Current practice patterns of drain usage amongst UK and Irish surgeons performing bilateral breast reductions: Evidence down the drain.

PubMed

Sugrue, Conor M; McInerney, Niall; Joyce, Cormac W; Jones, Deidre; Hussey, Alan J; Kelly, Jack L; Kerin, Michael J; Regan, Padraic J

2015-01-01

Bilateral breast reduction (BBR) is one of the most frequently performed female breast operations. Despite no evidence supporting efficacy of drain usage in BBRs, postoperative insertion is common. Recent high quality evidence demonstrating potential harm from drain use has subsequently challenged this traditional practice. The aim of this study is to assess the current practice patterns of drains usage by Plastic & Reconstructive and Breast Surgeons in UK and Ireland performing BBRs. An 18 question survey was created evaluating various aspects of BBR practice. UK and Irish Plastic & Reconstructive and Breast Surgeons were invited to participate by an email containing a link to a web-based survey. Statistical analysis was performed with student t-test and chi-square test. Two hundred and eleven responding surgeons were analysed, including 80.1% (171/211) Plastic Surgeons and 18.9% (40/211) Breast Surgeons. Of the responding surgeons, 71.6% (151/211) routinely inserted postoperative drains, for a mean of 1.32 days. Drains were used significantly less by surgeons performing ≥20 BBRs (p = 0.02). With the majority of BBRs performed as an inpatient procedure, there was a trend towards less drain usage in surgeons performing this procedure as an outpatient; however, this was not statistically significant (p = 0.07). Even with the high level of evidence demonstrating the safety of BBR without drains, they are still routinely utilised. In an era of evidence- based medicine, surgeons performing breast reductions must adopt the results from scientific research into their clinical practice.

Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

NASA Astrophysics Data System (ADS)

Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

Nonlinear current-voltage characteristics and enhanced negative differential conductance in graphene field effect transistors.

PubMed

Wang, Lin; Chen, Xiaoshuang; Hu, Yibin; Yu, Anqi; Lu, Wei

2014-11-07

Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as themore » AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.« less

Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint)

DTIC Science & Technology

2014-02-01

Applied Drain Voltage Ids Drain-to-Source current MPa Megapascals σxx x-Component of Stress INTRODUCTION Gallium nitride (GaN) based high electron...the thermodynamic model to obtain the current densities within a semiconductor device. In doing so, it is possible to determine the electric

Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

NASA Astrophysics Data System (ADS)

Kim, Heesang; Oh, Byoungchan; Kim, Kyungdo; Cha, Seon-Yong; Jeong, Jae-Goan; Hong, Sung-Joo; Lee, Jong-Ho; Park, Byung-Gook; Shin, Hyungcheol

2010-09-01

We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxide-semiconductor field-effect transistors (MOSFETs).

A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-03-01

In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Dong-Suk; Kang, Yu-Jin; Park, Jae-Hyung

Highlights: • We developed and investigated source/drain electrodes in oxide TFTs. • The Mo S/D electrodes showed good output characteristics. • Intrinsic TFT parameters were calculated by the transmission line method. - Abstract: This paper investigates the feasibility of a low-resistivity electrode material (Mo) for source/drain (S/D) electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain electrodes and amorphous zinc–tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Momore » source/drain electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm{sup 2}/V s. In spite of slight current crowding effects, the Mo source/drain electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V{sub DS}) region.« less

Performance improvement of doped TFET by using plasma formation concept

NASA Astrophysics Data System (ADS)

Soni, Deepak; Sharma, Dheeraj; Yadav, Shivendra; Aslam, Mohd.; Sharma, Neeraj

2018-01-01

Formation of abrupt doping profile at tunneling junction for the nanoscale tunnel field effect transistor (TFET) is a critical issue for attaining improved electrical behaviour. The realization of abrupt doping profile is more difficult in the case of physically doped TFETs due to material solubility limit. In this concern, we propose a novel design of TFET. For this, P+ (source)-I (channel)-N (drain) type structure has been considered, wherein a metal electrode is deposited over the source region. In addition to this, a negative voltage is applied to the source electrode (SE). It induces the surface plasma layer of holes in the source region, which is responsible for steepness in the bands at source/channel junction and provides the advantage of higher doping in source region without any addition of the physical impurity. The proposed modification is helpful for achieving steeper band bending at the source/channel interface, which enables higher tunneling generation rate of charge carriers at this interface and overcomes the issue of low ON-state current. Thus, the proposed device shows the increment of 2 decades in drain current and 252 mV reduction in threshold voltage compared with conventional device. The optimization of spacer length (LSG) between source/gate (LSG) and applied negative voltage (Vpg) over source electrode have been performed to obtain optimum drain current and threshold voltage (Vth). Further, for the suppression of ambipolar current, drain region is kept lightly doped, which reduces the ambipolar current up to level of Off state current. Moreover, in the proposed device gate electrode is underlapped for improving RF performance. It also reduces gate to drain capacitances (Cgd) and increases cut-off-frequency (fT), fmax, GBP, TFP. In addition to these, linearity analysis has been performed to validate the applicability of the device.

Optimization of limestone drains for long- term treatment of acidic mine drainage, Swatara Creek Basin, Schuylkill County, PA

USGS Publications Warehouse

Cravotta, Charles A.; Ward, S.J.; Koury, Daniel J.; Koch, R.D.

2004-01-01

Limestone drains were constructed in 1995, 1997, and 2000 to treat acidic mine drainage (AMD) from the Orchard, Buck Mtn., and Hegins discharges, respectively, in the Swatara Creek Basin, Southern Anthracite Coalfield, east-central Pennsylvania. This report summarizes the construction characteristics and performance of each of the limestone drains on the basis of influent and effluent quality and laboratory tests of variables affecting limestone dissolution rates. Data for influent and effluent indicate substantial alkalinity production by the Orchard and Buck Mtn. limestone drains and only marginal benefits from the Hegins drain. Nevertheless, the annual alkalinity loading rates have progressively declined with age of all three systems. Collapsible-container (cubitainer) testing was conducted to evaluate current scenarios and possible options for reconstruction and maintenance of the limestone drains to optimize their long-term performance. The cubitainer tests indicated dissolution rates for the current configurations that were in agreement with field flux data (net loading) for alkalinity and dissolved calcium. The dissolution rates in cubitainers were larger for closed conditions than open conditions, but the rates were comparable for coated and uncoated limestone for a given condition. Models developed on the basis of the cubitainer testing indicate (1) exponential declines in limestone mass and corresponding alkalinity loading rates with increased age of limestone drains and (2) potential for improved performance with enlargement, complete burial, and/or regular flushing of the systems.

Methane production as key to the greenhouse gas budget of thawing permafrost

NASA Astrophysics Data System (ADS)

Knoblauch, Christian; Beer, Christian; Liebner, Susanne; Grigoriev, Mikhail N.; Pfeiffer, Eva-Maria

2018-04-01

Permafrost thaw liberates frozen organic carbon, which is decomposed into carbon dioxide (CO2) and methane (CH4). The release of these greenhouse gases (GHGs) forms a positive feedback to atmospheric CO2 and CH4 concentrations and accelerates climate change1,2. Current studies report a minor importance of CH4 production in water-saturated (anoxic) permafrost soils3-6 and a stronger permafrost carbon-climate feedback from drained (oxic) soils1,7. Here we show through seven-year laboratory incubations that equal amounts of CO2 and CH4 are formed in thawing permafrost under anoxic conditions after stable CH4-producing microbial communities have established. Less permafrost carbon was mineralized under anoxic conditions but more CO2-carbon equivalents (CO2-Ce) were formed than under oxic conditions when the higher global warming potential (GWP) of CH4 is taken into account8. A model of organic carbon decomposition, calibrated with the observed decomposition data, predicts a higher loss of permafrost carbon under oxic conditions (113 ± 58 g CO2-C kgC-1 (kgC, kilograms of carbon)) by 2100, but a twice as high production of CO2-Ce (241 ± 138 g CO2-Ce kgC-1) under anoxic conditions. These findings challenge the view of a stronger permafrost carbon-climate feedback from drained soils1,7 and emphasize the importance of CH4 production in thawing permafrost on climate-relevant timescales.

A new assessment method of pHEMT models by comparing relative errors of drain current and its derivatives up to the third order

NASA Astrophysics Data System (ADS)

Dobeš, Josef; Grábner, Martin; Puričer, Pavel; Vejražka, František; Míchal, Jan; Popp, Jakub

2017-05-01

Nowadays, there exist relatively precise pHEMT models available for computer-aided design, and they are frequently compared to each other. However, such comparisons are mostly based on absolute errors of drain-current equations and their derivatives. In the paper, a novel method is suggested based on relative root-mean-square errors of both drain current and its derivatives up to the third order. Moreover, the relative errors are subsequently relativized to the best model in each category to further clarify obtained accuracies of both drain current and its derivatives. Furthermore, one our older and two newly suggested models are also included in comparison with the traditionally precise Ahmed, TOM-2 and Materka ones. The assessment is performed using measured characteristics of a pHEMT operating up to 110 GHz. Finally, a usability of the proposed models including the higher-order derivatives is illustrated using s-parameters analysis and measurement at more operating points as well as computation and measurement of IP3 points of a low-noise amplifier of a multi-constellation satellite navigation receiver with ATF-54143 pHEMT.

The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors

NASA Astrophysics Data System (ADS)

Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I.; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming

2017-03-01

This paper investigates the degradation behavior of InGaZnO thin film transistors (TFTs) under negative bias illumination stress (NBIS). TFT devices with two different source and drain layouts were exanimated: one having a parallel format electrode and the other with UI format electrode. UI means that source/drain electrodes shapes is defined as a forked-shaped structure. The I-V curve of the parallel electrode exhibited a symmetric degradation under forward and reverse sweeping in the saturation region after 1000 s NBIS. In contrast, the I-V curve of the UI electrode structure under similar conditions was asymmetric. The UI electrode structure also shows a stretch-out phenomenon in its C-V measurement. Finally, this work utilizes the ISE-Technology Computer Aided Design (ISE-TCAD) system simulations, which simulate the electron field and IV curves, to analyze the mechanisms dominating the parallel and UI device degradation behaviors.

Bilateral primary spontaneous pneumothoraces postcaesarean section – another reason to avoid general anaesthesia in pregnancy

PubMed Central

Aye, Christina Yi Ling; McKean, David; Dark, Allan; Akinsola, S Adeyemi

2012-01-01

A 36-year-old, healthy, primiparous female underwent a caesarean section under general anaesthetic. She had previously had a severe reaction to dye during a myelogram and therefore, had declined epidural analgesia or regional anaesthesia. Induction and maintenance of anaesthesia was uneventful, but on emergence, and before tracheal extubation, the patient coughed on the endotracheal tube and almost immediately developed right-sided subcutaneous emphysema of the face and neck. At this point her oxygen saturation began to fall and she was noted to be difficult to ventilate. Clinically and radiologically, she had a right-sided pneumothorax which was treated immediately with intercostal drain insertion. She went on to develop a left pneumothorax which also required intercostal drain insertion. She made an uneventful recovery and was discharged 8 days later. A subsequent CT scan of her chest revealed no pre-existing primary pulmonary pathology that would have accounted for the pneumothoraces. PMID:22927264

Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors

NASA Astrophysics Data System (ADS)

Choi, Kwang-Hyuk; Kim, Han-Ki

2013-02-01

Ti contact properties and their electrical contribution to an amorphous InGaZnO (a-IGZO) semiconductor-based thin film transistor (TFT) were investigated in terms of chemical, structural, and electrical considerations. TFT device parameters were quantitatively studied by a transmission line method. By comparing various a-IGZO TFT parameters with those of different Ag and Ti source/drain electrodes, Ti S/D contact with an a-IGZO channel was found to lead to a negative shift in VT (-Δ 0.52 V). This resulted in higher saturation mobility (8.48 cm2/Vs) of a-IGZO TFTs due to effective interfacial reaction between Ti and an a-IGZO semiconducting layer. Based on transmission electron microcopy, x-ray photoelectron depth profile analyses, and numerical calculation of TFT parameters, we suggest a possible Ti contact mechanism on semiconducting a-IGZO channel layers for TFTs.

Soft-type trap-induced degradation of MoS2 field effect transistors.

PubMed

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS 2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS 2 FETs.

Soft-type trap-induced degradation of MoS2 field effect transistors

NASA Astrophysics Data System (ADS)

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Specific yield - laboratory experiments showing the effect of time on column drainage

USGS Publications Warehouse

Prill, Robert C.; Johnson, A.I.; Morris, Donald Arthur

1965-01-01

The increasing use of ground water from many major aquifers in the United States has required a more thorough understanding of gravity drainage, or specific yield. This report describes one phase of specific yield research by the U.S. Geological Survey's Hydrologic Laboratory in cooperation with the California Department of Water Resources. An earlier phase of the research concentrated on the final distribution of moisture retained after drainage of saturated columns of porous media. This report presents the phase that concentrated on the distribution of moisture retained in similar columns after drainage for various periods of time. Five columns, about 4 cm in diameter by 170 cm long, were packed with homogenous sand of very fine, medium, and coarse sizes, and one column was packed with alternating layers of coarse and medium sand. The very fine materials were more uniform in size range than were the medium materials. As the saturated columns drained, tensiometers installed throughout the length recorded changes in moisture tension. The relation of tension to moisture content, determined for each of the materials, was then used to convert the tension readings to moisture content. Data were then available on the distribution of retained moisture for different periods of drainage from 1 to 148 hours. Data also are presented on the final distribution of moisture content by weight and volume and on the degree of saturation. The final zone of capillary saturation was approximately 12 cm for coarse sand, 13 cm for medium sand, and 52 cm for very fine sand. The data showed these zones were 92 to 100 percent saturated. Most of the outflow from the columns occurred in the earlier hours of drainage--90 percent in 1 hour for the coarse materials, 50 percent for the medium, and 60 percent for the very fine. Although the largest percentage of the specific yield was reached during the early hours of .drainage, this study amply demonstrates that a very long time would be required to reach drainage equilibrium. In the layered columns the middle (medium sand) layer functioned as a hanging water column accelerating the drainage of the overlying coarse-sand layer. After the middle layer started to drain, the moisture distribution as retained in all three layers showed trends similar to that obtained when the same materials were tested in homogenous columns.

Analysis of source/drain engineered 22nm FDSOI using high-k spacers

NASA Astrophysics Data System (ADS)

Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

While looking at the current classical scaling of devices there are lots of short channel effects come into consideration. In this paper, a novel device structure is proposed that is an improved structure of Modified Source(MS) FDSOI in terms of better electrical performance, on current and reduced off state leakage current with a higher Ion/Ioff ratio that helps in fast switching of low power nano electronic devices. Proposed structure has Modified drain and source regions with two different type to doping profile at 22nm gate length. In the upper part of engineered region (MD and MS) the doping concentration is kept high and less in the lower region. The purpose was to achieve low parasitic capacitance in source and drain region by reducing doping concentration [1].

Drained coastal peatlands: A potential nitrogen source to marine ecosystems under prolonged drought and heavy storm events-A microcosm experiment.

PubMed

Wang, Hongjun; Richardson, Curtis J; Ho, Mengchi; Flanagan, Neal

2016-10-01

Over the past several decades there has been a massive increase in coastal eutrophication, which is often caused by increased runoff input of nitrogen from landscape alterations. Peatlands, covering 3% of land area, have stored about 12-21% of global soil organic nitrogen (12-20Pg N) around rivers, lakes and coasts over millennia and are now often drained and farmed. Their huge nitrogen pools may be released by intensified climate driven hydrologic events-prolonged droughts followed by heavy storms-and later transported to marine ecosystems. In this study, we collected peat monoliths from drained, natural, and restored coastal peatlands in the Southeastern U.S., and conducted a microcosm experiment simulating coupled prolonged-drought and storm events to (1) test whether storms could trigger a pulse of nitrogen export from drought-stressed peatlands and (2) assess how differentially hydrologic managements through shifting plant communities affect nitrogen export by combining an experiment of nitrogen release from litter. During the drought phase, we observed a significant temporal variation in net nitrogen mineralization rate (NMR). NMR spiked in the third month and then decreased rapidly. This pattern indicates that drought duration significantly affects nitrogen mineralization in peat. NMR in the drained site reached up to 490±110kgha(-1)year(-1), about 5 times higher than in the restored site. After the 14-month drought phase, we simulated a heavy storm by bringing peat monoliths to saturation. In the discharge waters, concentrations of total dissolved nitrogen in the monoliths from the drained site (72.7±16.3mgL(-1)) was about ten times as high as from the restored site. Our results indicate that previously drained peatlands under prolonged drought are a potent source of nitrogen export. Moreover, drought-induced plant community shifts to herbaceous plants substantially raise nitrogen release with lasting effects by altering litter quality in peatlands. Copyright © 2016 Elsevier B.V. All rights reserved.

Restructuring brain drain: strengthening governance and financing for health worker migration.

PubMed

Mackey, Tim K; Liang, Bryan A

2013-01-15

Health worker migration from resource-poor countries to developed countries, also known as ''brain drain'', represents a serious global health crisis and a significant barrier to achieving global health equity. Resource-poor countries are unable to recruit and retain health workers for domestic health systems, resulting in inadequate health infrastructure and millions of dollars in healthcare investment losses. Using acceptable methods of policy analysis, we first assess current strategies aimed at alleviating brain drain and then propose our own global health policy based solution to address current policy limitations. Although governments and private organizations have tried to address this policy challenge, brain drain continues to destabilise public health systems and their populations globally. Most importantly, lack of adequate financing and binding governance solutions continue to fail to prevent health worker brain drain. In response to these challenges, the establishment of a Global Health Resource Fund in conjunction with an international framework for health worker migration could create global governance for stable funding mechanisms encourage equitable migration pathways, and provide data collection that is desperately needed.

Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.

PubMed

Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lian-Mao

2015-01-27

Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.

A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Han, Chang-Wook; Han, Min-Koo; Choi, Nack-Bong; Kim, Chang-Dong; Kim, Ki-Yong; Chung, In-Jae

2007-07-01

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a flexible stainless-steel (SS) substrate. The stability of the a-Si:H TFT is a key issue for active matrix organic light-emitting diodes (AMOLEDs). The drain current decreases because of the threshold voltage shift (Δ VTH) during OLED driving. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and the gate electrode without additional circuits. The negative voltage biased at the SS substrate can recover Δ VTH and reduced drain current of the driving TFT. The VTH of the TFT increased by 2.3 V under a gate bias of +15 V and a drain bias of +15 V at 65 °C applied for 3,500 s. The VTH decreased by -2.3 V and the drain current recovered 97% of its initial value under a substrate bias of -23 V at 65 °C applied for 3,500 s.

Two-dimensional analytical model for dual-material control-gate tunnel FETs

NASA Astrophysics Data System (ADS)

Xu, Hui Fang; Dai, Yue Hua; Gui Guan, Bang; Zhang, Yong Feng

2016-09-01

An analytical model for a dual-material control-gate (DMCG) tunnel field effect transistor (TFET) is presented for the first time in this paper, and the influence of the mobile charges on the potential profile is taken into account. On the basis of the potential profile, the lateral electric field is derived and the expression for the drain current is obtained by integrating the band-to-band tunneling (BTBT) generation rate applicable to low-bandgap and high-bandgap materials over the tunneling region. The model also predicts the impacts of the control-gate work function on the potential and drain current. The advantage of this work is that it not only offers physical insight into device physics but also provides the basic designing guideline for DMCG TFETs, enabling the designer to optimize the device in terms of the on-state current, the on-off current ratio, and suppressed ambipolar behavior. Very good agreements for both the potential and drain current are observed between the model calculations and the simulated results.

A Brain-Machine-Brain Interface for Rewiring of Cortical Circuitry after Traumatic Brain Injury

DTIC Science & Technology

2011-09-01

cerebral cortex of a rat’s brain. The flow chart for spike discrimination algorithm is also shown. Negative threshold level (not shown in bottom left...portion of the transistor drain current can flow into its bulk due to impact ionization effect [40], greatly degrading the output impedance of the...current source. This can be solved by connecting the bulk and source of together, as also seen in Fig. 4, allowing its drain-bulk current to also flow

Investigation of defect-induced abnormal body current in fin field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin

2015-08-24

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Fabrication of Organic Transistors Using Nanomaterials for Sensing Applications

NASA Astrophysics Data System (ADS)

Harb, Mohamed E.; Ebrahim, Shaker; Soliman, Moataz; Shabana, Mahmoud

2018-01-01

In this work, an organic field-effect transistor (OFET) was fabricated and characterized based on the bottom contact of a polyaniline (PANI) or PANI/TiO2 nanocomposite as an active layer and SiO2 as an insulating layer to be used for ammonia gas sensing applications. The OFET sensors exhibited a change in the drain current when exposed to NH3. Titanium dioxide (TiO2) nanoparticles with different weight percentages (0-50 wt.%) were added to dope PANI and enhance charge carrier transport, although the response of both the PANI OFET sensor and PANI/TiO2 OFET sensor has reached saturation value at almost the same period. The response of PANI/TiO2 transistor is (2.5), which is much higher than that of PANI (0.17). The results showed that the sensor response of the OFET device fabricated with PANI/TiO2 is 15 times greater than that with an OFET device fabricated using pristine PANI.

High-frequency self-aligned graphene transistors with transferred gate stacks

PubMed Central

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-01-01

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

NASA Astrophysics Data System (ADS)

Gillespie, J. K.; Fitch, R. C.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; Mastro, M. A.; Tsvetkov, D.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.; Luo, B.; Pearton, S. J.; Ren, F.

2003-10-01

AlGaN/GaN high electron mobility transistors (HEMTs) were grown by molecular beam epitaxy (MBE) on 2 in. diameter GaN buffer layers grown by hydride vapor epitaxy (HVPE) on sapphire substrates. HEMTs with 1 μm gate length displayed excellent dc and rf performance uniformity with up to 258 separate devices measured for each parameter. The drain-source saturation current was 561 mA with a standard deviation of 1.9% over the 2 in. diameter, with a corresponding transconductance of 118 ± 3.9 mS/mm. The threshold voltage was -5.3 ± 0.07 V. The rf performance uniformity was equally good, with an fT of 8.6 ± 0.8 GHz and fmax of 12.8 ± 2.5 GHz. The results show the excellent uniformity of the MBE technique for producing AlGaN/GaN HEMTs and also the ability of HVPE to provide high quality buffers at low cost.

Advances in chest drain management in thoracic disease

PubMed Central

George, Robert S.

2016-01-01

An adequate chest drainage system aims to drain fluid and air and restore the negative pleural pressure facilitating lung expansion. In thoracic surgery the post-operative use of the conventional underwater seal chest drainage system fulfills these requirements, however they allow great variability amongst practices. In addition they do not offer accurate data and they are often inconvenient to both patients and hospital staff. This article aims to simplify the myths surrounding the management of chest drains following chest surgery, review current experience and explore the advantages of modern digital chest drain systems and address their disease-specific use. PMID:26941971

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

Structural, Material, and Geotechnical Solutions to Levee and Floodwall Construction and Retrofitting - Physical Modeling

DTIC Science & Technology

2012-12-01

thick sand layer was placed, the excess surface water was drained off, completing the saturated loose sand layer (Figure 22). Ten pore pressure...during flight. ERDC/GSL TR-12-37 17 Figure 28. Lasers to measure top of I-wall deflection. A 1/4-in. water supply tube was installed to provide...inflow rate via the 1/4-in. tubing would not fill the basin faster than any underseepage would develop because of the relative foundation weakness

Towards evidence-based emergency medicine: best BETs from the Manchester Royal Infirmary. BET 4: does size matter? Chest drains in haemothorax following trauma.

PubMed

2013-11-01

A short-cut review was carried out to establish whether the size of chest drain inserted is important in haemothoraces. Forty-nine papers were found of which four presented the best evidence to answer the clinical question. The author, date and country of publication, patient group studied, study type, relevant outcomes, results and study weaknesses of these best papers are shown in table 4. The clinical bottom line is that while the available evidence suggests that small bore drains may be as effective as large bore drains in resolving traumatic haemothoraces without additional complications, there is insufficient evidence currently available to recommend a change to standard practice (ie, large bore drains).

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

NASA Astrophysics Data System (ADS)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Efficiency of lithium pacemaker batteries as a function of discharge rate and iodine:P2VP cathode composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Helgeson, W.D.; Fester, K.E.

1980-01-01

Electrochemical discharge data for Li/I/sub 2/-P2VP pacemaker batteries at various discharge currents show the efficiency of the battery to be a function of discharge current. Depending on the iodine:P2VP cathode composition, the optimum current drain occurs between discharge currents of 100 to 200 /mu/a. As current drain is reduced to pacemaker application drains, 15-25 /mu/a, the efficiency of the Li/I/sub 2/-P2VP battery decreases. The loss in efficiency at pacemaker rates is attributed primarily to self-discharge. The efficiency of Li/I/sub 2/-P2VP batteries is improved by increasing the percent of iodine in the cathode. I/sub 2/:P2VP weight ratios of 10:1, 15:1 andmore » 20:1 have been discharged at various currents and the data indicate that there is significant improvement in efficiency at pacemaker rate in going from 10:1 to 20:1 cathode weight ratio. 2 refs.« less

Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing

NASA Astrophysics Data System (ADS)

Rabbaa, S.; Stiens, J.

2012-11-01

Gallium nitride (GaN) is a relatively new semiconductor material that has the potential of replacing gallium arsenide (GaAs) in some of the more recent technological applications, for example chemical sensor applications. In this paper, we introduce a triangular quantum well model for an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure used as a chemical and biological sensor for pH and dipole moment measurements of polar liquids. We have performed theoretical calculations related to the HEMT characteristics and we have compared them with experimental measurements carried out in many previous papers. These calculations include the current-voltage (I-V) characteristics of the device, the surface potential, the change in the drain current with the dipole moment and the drain current as a function of pH. The results exhibit good agreement with experimental measurements for different polar liquids and electrolyte solutions. It is also found that the drain current of the device exhibits a large linear variation with the dipole moment, and that the surface potential and the drain current depend strongly on the pH. Therefore, it can distinguish molecules with slightly different dipole moments and solutions with small variations in pH. The ability of the device to sense biomolecules (such as proteins) with very large dipole moments is investigated.

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

NASA Astrophysics Data System (ADS)

Kuzmík, J.; Pogany, D.; Gornik, E.; Javorka, P.; Kordoš, P.

2004-02-01

We study degradation mechanisms in 50 μm gate width/0.45 μm length AlGaN/GaN HEMTs after electrical overstresses. One hundred nanosecond long rectangular current pulses are applied on the drain contact keeping either both of the source and gate grounded or the source grounded and gate floating. Source-drain pulsed I- V characteristics show similar shape for both connections. After the HEMT undergoes the source-drain breakdown, a negative differential resistance region transits into a low voltage/high current region. Changes in the Schottky contact dc I- V characteristics and in the source and drain ohmic contacts are investigated as a function of the current stress level and are related to the HEMT dc performance. Catastrophic HEMT degradation was observed after Istress=1.65 A in case of the 'gate floating' connection due to ohmic contacts burnout. In case of the 'gate grounded' connection, Istress=0.45 A was sufficient for the gate failure showing a high gate susceptibility to overstress. Backside transient interferometric mapping technique experiment reveals a current filament formation under both HEMT stress connections. Infrared camera observations lead to conclusion that the filament formation together with a consequent high-density electron flow is responsible for a dark spot formation and gradual ohmic contact degradation.

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Reduced contact resistance of a-IGZO thin film transistors with inkjet-printed silver electrodes

NASA Astrophysics Data System (ADS)

Chen, Jianqiu; Ning, Honglong; Fang, Zhiqiang; Tao, Ruiqiang; Yang, Caigui; Zhou, Yicong; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao

2018-04-01

In this study, high performance amorphous In–Ga–Zn–O (a-IGZO) TFTs were successfully fabricated with inkjet-printed silver source-drain electrodes. The results showed that increased channel thickness has an improving trend in the properties of TFTs due to the decreased contact resistance. Compared with sputtered silver TFTs, devices with printed silver electrodes were more sensitive to the thickness of active layer. Furthermore, the devices with optimized active layer showed high performances with a maximum saturation mobility of 8.73 cm2 · V‑1 · S‑1 and an average saturation mobility of 6.97 cm2 · V‑1 · S‑1, I on/I off ratio more than 107 and subthreshold swing of 0.28 V/decade, which were comparable with the analogous devices with sputtered electrodes.

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

NASA Astrophysics Data System (ADS)

Thorpe, B.; Kalna, K.; Langbein, F. C.; Schirmer, S.

2017-12-01

Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Fluidic nanotubes and devices

DOEpatents

Yang, Peidong [Berkeley, CA; He, Rongrui [El Cerrito, CA; Goldberger, Joshua [Berkeley, CA; Fan, Rong [El Cerrito, CA; Wu, Yiying [Albany, CA; Li, Deyu [Albany, CA; Majumdar, Arun [Orinda, CA

2008-04-08

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Fluidic nanotubes and devices

DOEpatents

Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

2010-01-10

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

NASA Astrophysics Data System (ADS)

Ichino, Shinya; Mawaki, Takezo; Teramoto, Akinobu; Kuroda, Rihito; Park, Hyeonwoo; Wakashima, Shunichi; Goto, Tetsuya; Suwa, Tomoyuki; Sugawa, Shigetoshi

2018-04-01

Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a floor noise of 35 µV rms. In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

Multiple-channel detection of cellular activities by ion-sensitive transistors

NASA Astrophysics Data System (ADS)

Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

2018-04-01

An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Yang, Zhaonian; Zhang, Yue; Yang, Yuan; Yu, Ningmei

2017-11-01

Tunnel field-effect transistor (TFET) is very attractive in replacing a MOSFET, particularly for low-power nanoelectronic circuits. The U-shaped channel TFET (U-TFET) was proposed to improve the drain-source current with a reduced footprint. In this work, the impact of the source height (HS) on the characteristic of the U-shaped channel tunnel field-effect transistor (U-TFET) is investigated by using TCAD simulation. It is found that with a fixed gate height (HG) the drain-source current has a negative correlation with HS. This is because when the gate region is deeper than the source region, the electric field near the corner of the tunneling junction can be enhanced and the tunneling rate is increased. When HS becomes very thin, the drain-source current is limited by the source region volume. The U-TFET with an n+ pocket is also studied and the same trend is observed.

Acoustoelectric current saturation in c-axis fiber-textured polycrystalline zinc oxide films

NASA Astrophysics Data System (ADS)

Pompe, T.; Srikant, V.; Clarke, D. R.

1996-12-01

Acoustoelectric current saturation, which until now has only been observed in piezoelectric single crystals, is observed in thin polycrystalline zinc oxide films. Epitaxial ZnO films on c-plane sapphire and textured ZnO polycrystalline films on fused silica both exhibit current saturation phenomenon. The values of the saturation current densities are in the range 105-106 A/cm2, depending on the carrier concentration in the film, with corresponding saturation electric fields of 3-5×103 V/cm. In addition to the current saturation, the electrical properties of the films degraded with the onset of the acoustoelectric effect but could be restored by annealing at 250 °C in a vacuum for 30 min.

Micro-poromechanics model of fluid-saturated chemically active fibrous media.

PubMed

Misra, Anil; Parthasarathy, Ranganathan; Singh, Viraj; Spencer, Paulette

2015-02-01

We have developed a micromechanics based model for chemically active saturated fibrous media that incorporates fiber network microstructure, chemical potential driven fluid flow, and micro-poromechanics. The stress-strain relationship of the dry fibrous media is first obtained by considering the fiber behavior. The constitutive relationships applicable to saturated media are then derived in the poromechanics framework using Hill's volume averaging. The advantage of this approach is that the resultant continuum model accounts for the discrete nature of the individual fibers while retaining a form suitable for porous materials. As a result, the model is able to predict the influence of micro-scale phenomena, such as the fiber pre-strain caused by osmotic effects and evolution of fiber network structure with loading, on the overall behavior and in particular, on the poromechanics parameters. Additionally, the model can describe fluid-flow related rate-dependent behavior under confined and unconfined conditions and varying chemical environments. The significance of the approach is demonstrated by simulating unconfined drained monotonic uniaxial compression under different surrounding fluid bath molarity, and fluid-flow related creep and relaxation at different loading-levels and different surrounding fluid bath molarity. The model predictions conform to the experimental observations for saturated soft fibrous materials. The method can potentially be extended to other porous materials such as bone, clays, foams and concrete.

Sidewall crystallization and saturation front formation in silicic magma chambers

NASA Astrophysics Data System (ADS)

Lake, E. T.

2012-12-01

The cooling and crystallization style of silicic magma bodies in the upper crust falls on a continuum between whole-chamber processes of convection, crystal settling, and cumulate formation and interface driven processes of conduction and crystallization front migration. In the former case, volatile saturation occurs uniformly chamber wide, in the latter volatile saturation occurs along an inward propagating front. Ambient thermal gradient primarily controls the propagation rate; warm (> 30 °C / km) geothermal gradients promote 1000m+ thick crystal mush zones but slow crystallization front propagation. Cold geothermal gradients support the opposite. Magma chamber geometry plays a second order role in controlling propagation rates; bodies with high surface to magma ratio and large Earth's surface parallel faces exhibit more rapid propagation and smaller mush zones. Crystallization front propagation occurs at speeds of up to 6 cm/year (rhyolitic magma, thin sill geometry, 10 °C / km geotherm), far faster than diffusion of volatiles in magma and faster than bubbles can nucleate and ascend under certain conditions. Saturation front propagation is fixed by pressure and magma crystal content; above certain modest initial water contents (4.4 wt% in a dacite) mobile magma above 10 km depth always contains a saturation front. Saturation fronts propagate down from the magma chamber roof at lower water contents (3.3 wt% in a dacite at 5 km depth), creating an upper saturated interface for most common (4 - 6 wt%) magma water contents. This upper interface promotes the production of a fluid pocket underneath the apex of the magma chamber. Magma de-densification by bubble nucleation promotes convection and homogenization in dacitic systems. If the fluid pocket grew rapidly without draining, hydro-fracturing and eruption would result. The combination of fluid escape pathways and metal scavenging would generate economic vein or porphyry deposits.

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Fukuda, Koichi; Liu, Yongxun; Mori, Takahiro; Mizubayashi, Wataru; O'uchi, Shin-ichi; Fuketa, Hiroshi; Otsuka, Shintaro; Migita, Shinji; Masahara, Meishoku; Endo, Kazuhiko; Ota, Hiroyuki; Matsukawa, Takashi

2017-04-01

We have demonstrated the operation of a CMOS inverter consisting of Si tunnel FinFETs. Both p- and n-type tunnel FinFETs are successfully fabricated and operated on the same SOI wafer. The current mismatch between p- and n-type tunnel FETs is compensated by tuning the number of fin channels. Very low short-circuit current and clear voltage input-output characteristics are obtained. The thin epitaxial channel in the tunnel FinFETs effectively increases the drain current and accordingly reduces the drain capacitance, which could help high-performance tunnel FET CMOS inverter operation.

[Outpatient Drain Management in Patients with Clinically Relevant Postoperative Pancreatic Fistula (CR-POPF) - Current Status in Germany].

PubMed

Hempel, Sebastian; Püttmann, Pamela; Kahlert, Christoph; Seifert, Lena; Mees, Sören Torge; Welsch, Thilo; Weitz, Jürgen; Distler, Marius

2018-06-01

Postoperative pancreatic fistula (POPF) is a common complication after pancreatic surgery and is associated with extended hospitalisation, increased medical costs, and reduced quality of life. The aim of the present study was to assess the treatment of POPF in Germany, with a special focus on outpatient drain management in patients with clinically relevant POPF (CR-POPF). A questionnaire evaluating postoperative management once a CR-POPF is diagnosed - especially focusing on ambulatory drain management - was developed and sent to 211 German hospitals performing > 12 pancreatic operations per year. Statistical analysis was carried out using SPSS 21. The final response rate was 62% (n = 131). Outpatient drainage management is performed by most of the responding hospitals (n = 100, 76.3%). However, 30% of hospitals (n = 40) perform outpatient treatment only in 5% of their cases with clinically relevant POPF. There was no correlation between case load of the pancreatic centres and frequency of outpatient drain management. In general, discharge criteria for patients with drained POPF (n = 98, 74.8%), the drain management itself (n = 95, 72.5%) and criteria for drain removal (n = 74, 56.5%) are not standardised but made individually. In centres with standardised drain management criteria for drain removal, these criteria were drain volume < 20 ml (29.8%), no fluid collection (25.2%), no elevation of drain amylase/lipase (25.2%) and no specific symptoms (22.1%). This is the first survey in Germany evaluating outpatient drain management in patients with CR-POPF. Although the data in the literature are rare, the majority of German pancreatic surgeons perform outpatient drain management. However, discharge criteria, outpatient care and drain removal are standardised in only the minority of centres. Therefore, we recommend the evaluation of discharge criteria and a management algorithm for patients with drained CR-POPF to improve the perioperative course. Georg Thieme Verlag KG Stuttgart · New York.

A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

NASA Astrophysics Data System (ADS)

Priya, Anjali; Mishra, Ram Awadh

2016-04-01

In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

Charge-Dissipative Electrical Cables

NASA Technical Reports Server (NTRS)

Kolasinski, John R.; Wollack, Edward J.

2004-01-01

Electrical cables that dissipate spurious static electric charges, in addition to performing their main functions of conducting signals, have been developed. These cables are intended for use in trapped-ion or ionizing-radiation environments, in which electric charges tend to accumulate within, and on the surfaces of, dielectric layers of cables. If the charging rate exceeds the dissipation rate, charges can accumulate in excessive amounts, giving rise to high-current discharges that can damage electronic circuitry and/or systems connected to it. The basic idea of design and operation of charge-dissipative electrical cables is to drain spurious charges to ground by use of lossy (slightly electrically conductive) dielectric layers, possibly in conjunction with drain wires and/or drain shields (see figure). In typical cases, the drain wires and/or drain shields could be electrically grounded via the connector assemblies at the ends of the cables, in any of the conventional techniques for grounding signal conductors and signal shields. In some cases, signal shields could double as drain shields.

Subsurface evaluation of the west parking lot and landfill 3 areas of Air Force Plant 4, Fort Worth, Texas, using two-dimensional direct-current resistivity profiling

USGS Publications Warehouse

Braun, Christopher L.; Jones, Sonya A.

2002-01-01

During September 1999, the U.S. Geological Survey made 10 two-dimensional direct-current resistivity profile surveys in the west parking lot and landfill 3 areas of Air Force Plant 4, Fort Worth, Texas, to identify subsurface areas of anomalously high or low resistivity that could indicate potential contamination, contaminant pathways, or anthropogenic structures. Six of the 10 surveys (transects) were in the west parking lot. Each of the inverted sections of these transects had anomalously high resistivities in the terrace alluvium/fill (the surficial subsurface layer) that probably were caused by highly resistive fill material. In addition, each of these transects had anomalously low resistivities in the Walnut Formation (a bedrock layer immediately beneath the alluvium/fill) that could have been caused by saturation of fractures within the Walnut Formation. A high-resistivity anomaly in the central part of the study area probably is associated with pea gravel fill used in construction of a French drain. Another high resistivity anomaly in the west parking lot, slightly southeast of the French drain, could be caused by dense nonaqueous-phase liquid in the Walnut Formation. The inverted sections of the four transects in the landfill 3 area tended to have slightly higher resistivities in both the alluvium/fill and the Walnut Formation than the transects in the west parking lot. The higher resistivities in the alluvium/fill could have been caused by drier conditions in grassy areas relative to conditions in the west parking lot. Higher resistivities in parts of the Walnut Formation also could be a function of drier conditions or variations in the lithology of the Walnut Formation. In addition to the 10 vertical sections, four horizontal sections at 2-meteraltitude intervals show generally increasing resistivity with decreasing altitude that most likely results from the increased influence of the Walnut Formation, which has a higher resistivity than the terrace alluvium/fill.

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

NASA Astrophysics Data System (ADS)

Poorvasha, S.; Lakshmi, B.

2018-05-01

In this paper, RF performance analysis of InAs-based double gate (DG) tunnel field effect transistors (TFETs) is investigated in both qualitative and quantitative fashion. This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters, unity gain cut-off frequency (f t), maximum oscillation frequency (f max), intrinsic gain and admittance (Y) parameters. An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. Higher ON-current (I ON) of about 0.2 mA and less leakage current (I OFF) of 29 fA is achieved for DG TFET with gate-drain overlap. Due to increase in transconductance (g m), higher f t and intrinsic gain is attained for DG TFET with gate-drain overlap. Higher f max of 985 GHz is obtained for drain doping of 5 × 1017 cm‑3 because of the reduced gate-drain capacitance (C gd) with DG TFET with gate-drain overlap. In terms of Y-parameters, gate oxide thickness variation offers better performance due to the reduced values of C gd. A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters. The simulation results are compared with this numerical model where the predicted values match with the simulated values. Project supported by the Department of Science and Technology, Government of India under SERB Scheme (No. SERB/F/2660).

An EKV-based high voltage MOSFET model with improved mobility and drift model

NASA Astrophysics Data System (ADS)

Chauhan, Yogesh Singh; Gillon, Renaud; Bakeroot, Benoit; Krummenacher, Francois; Declercq, Michel; Ionescu, Adrian Mihai

2007-11-01

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270-3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11-12):1801-13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11-12):1801-13] especially in the quasi-saturation region of output characteristics.

GIDL analysis of the process variation effect in gate-all-around nanowire FET

NASA Astrophysics Data System (ADS)

Kim, Shinkeun; Seo, Youngsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

A novel method for electronic measurement and recording of surgical drain output.

PubMed

van Duren, Bernard Hendrik; van Boxel, Gijsbert Isaac

2017-04-01

Surgical drains are used to collect and measure fluids (e.g. serous fluid, lymph, blood, etc.). The volume of fluid in the container is measured using graded markings on the container and then recorded manually on a "drain chart" allowing for manual rate calculations. This method is dependant on regularly checking the volume of the drain and recording the value accurately; unfortunately, this is often not feasible due to staffing levels and time constraints. This results in inaccurate "drain charts" making clinical decisions based on these figures unreliable. Often the lack of confidence in these measurements leads to delayed drain removal with consequent increased infection risks and potential delayed discharge. Accurate digital measurement of drain content would have a significant impact on clinical care. This paper describes a digital technology to measure volume, making use of a positive terminal at the lowest point of the vessel and negative (sensor) terminals placed at accurate intervals along an axis of the vessel. A proof-of-concept prototype was developed using commercially available electronic components to test the feasibility of a technology for electronic measurement and recording of surgical drain content. In a simulated environment, the proposed technology was shown to be effective and accurate. The proposed electronic drain has a number of advantages over currently used devices in saving time and easing pressure on nursing staff, reduce disturbance of patients, and allows for preset alarms.

Comparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's

NASA Astrophysics Data System (ADS)

Zupac, Dragan; Kosier, Steven L.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Baum, Keith W.

1991-10-01

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.

Structural Modification of Organic Thin-Film Transistors for Photosensor Application

NASA Astrophysics Data System (ADS)

Jeong, Hyeon Seok; Bae, Jin-Hyuk; Lee, Hyeonju; Ndikumana, Joel; Park, Jaehoon

2018-05-01

We investigated the light response characteristics of bottom-gate/top-contact organic TFTs fabricated using pentacene and polystyrene as an organic semiconductor and a polymeric insulator, respectively. The pentacene TFT with overlaps (50 μm) between the source and gate electrodes as well as between the drain and gate electrodes exhibited negligible hysteresis in its transfer characteristics upon reversal of the gate voltage sweep direction. When the TFTs were structurally modified to produce an underlap structure between the source and gate electrodes, clockwise hysteresis and a drain-current decrease were observed, which were further augmented by increasing the gate underlap (from 30 μm to 50 μm and 70 μm). Herein, these results are explained in terms of space charge formation and accumulation capacitance reduction. Importantly, we found that space charges formed under the source electrode contributed to the drain currents via light irradiation through the underlap region. Under constant bias conditions, the TFTs with gate underlap structures thus exhibited on-state drain current changes in response to light signals. In our study, an optimal photosensitivity exceeding 11 was achieved by the TFT with a 30 μm gate underlap. Consequently, we suggest that gate underlap structure modification is a viable means of implementing light responsiveness in organic TFTs.

Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices

NASA Astrophysics Data System (ADS)

Zanoni, Enrico; Meneghesso, Gaudenzio; Menozzi, Roberto

2000-03-01

Hot electron in III-V FETs can be indirectly monitored by measuring the current coming out from the gate when the device is biased at high electric fields. This negative current is due to the collection of holes generated by impact ionization in the gate-to drain region. Electroluminescence represents a powerful tool in order to characterize not only hot electrons but also material properties. By using spatially resolved emission microscopy it is possible to show that the light due to cold electron/hole recombination is emitted between the gate and the source (low electric field region), while the contribution due to hot electrons is emitted between the gate and the drain (high electric field region). Deep-traps created in the device by hot carriers can be analysed by means of drain current deep level transient spectroscopy and by transconductance frequency dispersion. Cathodoluminescence, optical beam induced current, X-ray spectroscopy, electron energy loss spectroscopy in combination with a transmission electron microscopy are powerful tools in order to identify and localize surface modification following hot-electron stress tests.

High soil solution carbon and nitrogen concentrations in a drained Atlantic bog are reduced to natural levels by 10 years of rewetting

NASA Astrophysics Data System (ADS)

Frank, S.; Tiemeyer, B.; Gelbrecht, J.; Freibauer, A.

2014-04-01

Anthropogenic drainage of peatlands releases additional greenhouse gases to the atmosphere, and dissolved carbon (C) and nutrients to downstream ecosystems. Rewetting drained peatlands offers a possibility to reduce nitrogen (N) and C losses. In this study, we investigate the impact of drainage and rewetting on the cycling of dissolved C and N as well as on dissolved gases, over a period of 1 year and a period of 4 months. We chose four sites within one Atlantic bog complex: a near-natural site, two drained grasslands with different mean groundwater levels and a former peat cutting area rewetted 10 years ago. Our results clearly indicate that long-term drainage has increased the concentrations of dissolved organic carbon (DOC), ammonium, nitrate and dissolved organic nitrogen (DON) compared to the near-natural site. DON and ammonium contributed the most to the total dissolved nitrogen. Nitrate concentrations below the mean groundwater table were negligible. The concentrations of DOC and N species increased with drainage depth. In the deeply-drained grassland, with a mean annual water table of 45 cm below surface, DOC concentrations were twice as high as in the partially rewetted grassland with a mean annual water table of 28 cm below surface. The deeply drained grassland had some of the highest-ever observed DOC concentrations of 195.8 ± 77.3 mg L-1 with maximum values of >400 mg L-1. In general, dissolved organic matter (DOM) at the drained sites was enriched in aromatic moieties and showed a higher degradation status (lower DOC to DON ratio) compared to the near-natural site. At the drained sites, the C to N ratios of the uppermost peat layer were the same as of DOM in the peat profile. This suggests that the uppermost degraded peat layer is the main source of DOM. Nearly constant DOM quality through the profile furthermore indicated that DOM moving downwards through the drained sites remained largely biogeochemically unchanged. Unlike DOM concentration, DOM quality and dissolved N species distribution were similar in the two grasslands and thus unaffected by the drainage depth. Methane production during the winter months at the drained sites was limited to the subsoil, which was quasi-permanently water saturated. The recovery of the water table in the winter months led to the production of nitrous oxide around mean water table depth at the drained sites. The rewetted and the near-natural site had comparable DOM quantity and quality (DOC to DON ratio and aromaticity). 10 years after rewetting quasi-pristine biogeochemical conditions have been re-established under continuously water logged conditions in the former peat cut area. Only the elevated dissolved methane and ammonium concentrations reflected the former disturbance by drainage and peat extraction. Rewetting via polder technique seems to be an appropriate way to revitalize peatlands on longer timescales and to improve the water quality of downstream water bodies.

The need for an improved risk index for phosphorus losses to water from tile-drained agricultural land

NASA Astrophysics Data System (ADS)

Ulén, Barbro; Djodjic, Faruk; Etana, Araso; Johansson, Göran; Lindström, Jan

2011-03-01

SummaryA refined version of a conditional phosphorus risk index (PRI) for P losses to waters was developed based on monitoring and analyses of PRI factors from an agricultural catchment in Sweden. The catchment has a hummocky landscape of heavy glacial till overlying moraine and an overall balanced soil P level. Single P source factors and combinations of factors were tested and discussed together with water movement and water management factors important for catchments dominated by drained clay soils. An empirical relationship was established (Pearson correlation coefficient 0.861, p < 0.001) between phosphorus sorption index (PSI-CaCl 2), measured in a weak calcium chloride solution, and iron (Fe-AL) aluminium (Al-AL) and phosphorus (P-AL) in soil extract with acid ammonium lactate. Differing relationships were found for a field that had not received any manure in the last 15 years and a field that had received chicken litter very recently. In addition, a general relationship (Pearson correlation coefficient 0.839, p < 0.001) was found between the ratio of phosphorus extracted from fresh soil in water (Pw) to PSI-CaCl 2 and the degree of phosphorus saturation in lactate extract (DPS-AL). One exception was a single field, representing 7% of agricultural land in the catchment, that had been treated with glyphosate shortly before soil sampling. Saturated hydraulic conductivity (SHC) in heavy clay in contact with the moraine base (at 1 m depth) was on average 0.06 m day -1. In clay not in contact with moraine, SHC was significantly lower (mean 0.007 m day -1). A reduction in the present tile drain spacing (from 14-16 m to 11 m) is theoretically required to maintain satisfactory water discharge and groundwater level. Up to 10% of the arable land was estimated to be a potential source area for P, based on different indices. Parts of a few fields close to farm buildings (1% of total arable land) were identified as essential P source areas, with high DPS-AL values and low PSI-CaCl 2 values throughout the soil profile. A further 2% of arable land was identified as potential important transport areas, based on visible surface water rills or frequent water-ponded conditions. Fields comprising 10% of the total arable land in the catchment should be re-drained in the near future to improve water infiltration and avoid unnecessary channelised water flow. The need for an improved PRI for erosion and water transport is discussed.

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Kang, B. S.; Mehandru, R.; Kim, S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2004-06-01

Pt contacted AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectrics show reversible changes in drain-source current upon exposure to H2-containing ambients, even at room temperature. The changes in current (as high as 3 mA for relatively low gate voltage and drain-source voltage) are approximately an order of magnitude larger than for Pt/GaN Schottky diodes and a factor of 5 larger than Sc2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) diodes exposed under the same conditions. This shows the advantage of using a transistor structure in which the gain produces larger current changes upon exposure to hydrogen-containing ambients. The increase in current is the result of a decrease in effective barrier height of the MOS gate of 30-50 mV at 25 °C for 10% H2/90% N2 ambients relative to pure N2 and is due to catalytic dissociation of the H2 on the Pt contact, followed by diffusion to the Sc2O3/AlGaN interface.

Restructuring brain drain: strengthening governance and financing for health worker migration

PubMed Central

Mackey, Tim K.; Liang, Bryan A.

2013-01-01

Background Health worker migration from resource-poor countries to developed countries, also known as ‘‘brain drain’’, represents a serious global health crisis and a significant barrier to achieving global health equity. Resource-poor countries are unable to recruit and retain health workers for domestic health systems, resulting in inadequate health infrastructure and millions of dollars in healthcare investment losses. Methods Using acceptable methods of policy analysis, we first assess current strategies aimed at alleviating brain drain and then propose our own global health policy based solution to address current policy limitations. Results Although governments and private organizations have tried to address this policy challenge, brain drain continues to destabilise public health systems and their populations globally. Most importantly, lack of adequate financing and binding governance solutions continue to fail to prevent health worker brain drain. Conclusions In response to these challenges, the establishment of a Global Health Resource Fund in conjunction with an international framework for health worker migration could create global governance for stable funding mechanisms encourage equitable migration pathways, and provide data collection that is desperately needed. PMID:23336617

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

NASA Astrophysics Data System (ADS)

Zhou, Hong; Maize, Kerry; Qiu, Gang; Shakouri, Ali; Ye, Peide D.

2017-08-01

We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

Targeting sediment management strategies using sediment quantification and fingerprinting methods

NASA Astrophysics Data System (ADS)

Sherriff, Sophie; Rowan, John; Fenton, Owen; Jordan, Phil; hUallacháin, Daire Ó.

2016-04-01

Cost-effective sediment management is required to reduce excessive delivery of fine sediment due to intensive land uses such as agriculture, resulting in the degradation of aquatic ecosystems. Prioritising measures to mitigate dominant sediment sources is, however, challenging, as sediment loss risk is spatially and temporally variable between and within catchments. Fluctuations in sediment supply from potential sources result from variations in land uses resulting in increased erodibility where ground cover is low (e.g., cultivated, poached and compacted soils), and physical catchment characteristics controlling hydrological connectivity and transport pathways (surface and/or sub-surface). Sediment fingerprinting is an evidence-based management tool to identify sources of in-stream sediments at the catchment scale. Potential sediment sources are related to a river sediment sample, comprising a mixture of source sediments, using natural physico-chemical characteristics (or 'tracers'), and contributions are statistically un-mixed. Suspended sediment data were collected over two years at the outlet of three intensive agricultural catchments (approximately 10 km2) in Ireland. Dominant catchment characteristics were grassland on poorly-drained soils, arable on well-drained soils and arable on moderately-drained soils. High-resolution (10-min) calibrated turbidity-based suspended sediment and discharge data were combined to quantify yield. In-stream sediment samples (for fingerprinting analysis) were collected at six to twelve week intervals, using time-integrated sediment samplers. Potential sources, including stream channel banks, ditches, arable and grassland field topsoils, damaged road verges and tracks were sampled, oven-dried (<40oC) and sieved (125 microns). Soil and sediment samples were analysed for mineral magnetics, geochemistry and radionuclide tracers, particle size distribution and soil organic carbon. Tracer data were corrected to account for particle size and organic matter selectivity processes. Contributions from potential sources type groups (channel - ditches and stream banks, roads - road verges and tracks, fields - grassland and arable topsoils) were statistically un-mixed using FR2000, an uncertainty-inclusive algorithm, and combined with sediment yield data. Results showed sediment contributions from channel, field and road groups were 70%, 25% and 5% in the poorly-drained catchment, 59%, 22% and 19% in the well-drained catchment, and 17%, 74% and 9% in the moderately-drained catchment. Higher channel contributions in the poorly-drained catchment were attributed to bank erosion accelerated by the rapid diversion of surface runoff into channels, facilitated by surface and sub-surface artificial drainage networks, and bank seepage from lateral pressure gradients due to confined groundwater. Despite the greatest proportion of arable soils in the well-drained catchment, this source was frequently hydrologically disconnected as well-drained soils largely infiltrated rainfall and prevented surface soil erosion. Periods of high and intense rainfall were associated with greater proportions of field losses in the well-drained catchment likely due to infiltration exceeding the saturated hydraulic conductivity of soils and establishment of surface hydrological connectivity. Losses from field topsoils dominated in the moderately-drained catchment as antecedent soil wetness maintained surface flow pathways and coincided with low groundcover on arable soils. For cost-effective management of sediment pressures to aquatic ecosystems, catchment specific variations in sediment sources must be considered.

Emerging organic contaminants in vertical subsurface flow constructed wetlands: influence of media size, loading frequency and use of active aeration.

PubMed

Avila, Cristina; Nivala, Jaime; Olsson, Linda; Kassa, Kinfe; Headley, Tom; Mueller, Roland A; Bayona, Josep Maria; García, Joan

2014-10-01

Four side-by-side pilot-scale vertical flow (VF) constructed wetlands of different designs were evaluated for the removal of eight widely used emerging organic contaminants from municipal wastewater (i.e. ibuprofen, acetaminophen, diclofenac, tonalide, oxybenzone, triclosan, ethinylestradiol, bisphenol A). Three of the systems were free-draining, with one containing a gravel substrate (VGp), while the other two contained sand substrate (VS1p and VS2p). The fourth system had a saturated gravel substrate and active aeration supplied across the bottom of the bed (VAp). All beds were pulse-loaded on an hourly basis, except VS2p, which was pulse-loaded every 2h. Each system had a surface area of 6.2m(2), received a hydraulic loading rate of 95 mm/day and was planted with Phragmites australis. The beds received an organic loading rate of 7-16 gTOC/m(2)d. The sand-based VF (VS1p) performed significantly better (p<0.05) than the gravel-based wetland (VGp) both in the removal of conventional water quality parameters (TSS, TOC, NH4-N) and studied emerging organic contaminants except for diclofenac (85 ± 17% vs. 74 ± 15% average emerging organic contaminant removal for VS1p and VGp, respectively). Although loading frequency (hourly vs. bi-hourly) was not observed to affect the removal efficiency of the cited conventional water quality parameters, significantly lower removal efficiencies were found for tonalide and bisphenol A for the VF wetland that received bi-hourly dosing (VS2p) (higher volume per pulse), probably due to the more reducing conditions observed in that system. However, diclofenac was the only contaminant showing an opposite trend to the rest of the compounds, achieving higher elimination rates in the wetlands that exhibited less-oxidizing conditions (VS2p and VGp). The use of active aeration in the saturated gravel bed (VAp) generally improved the treatment performance compared to the free-draining gravel bed (VGp) and achieved a similar performance to the free-draining sand-based VF wetlands (VS1p). Copyright © 2014 Elsevier B.V. All rights reserved.

Toward Adequate Operation of Amorphous Oxide Thin-Film Transistors for Low-Concentration Gas Detection.

PubMed

Kim, Kyung Su; Ahn, Cheol Hyoun; Jung, Sung Hyeon; Cho, Sung Woon; Cho, Hyung Koun

2018-03-28

We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO 2 gas detection. Although amorphous oxide layers have a restricted surface area when reacting with NO 2 gas, such TFT sensors have incomparable advantages in the aspects of electrical stability, large-scale uniformity, and the possibility of miniaturization. The a-IGZO thin films do not possess typical reactive sites and grain boundaries, so that the variation in drain current of the TFTs strictly originates from oxidation reaction between channel surface and NO 2 gas. Especially, the sensing data obtained from the variation rate of drain current makes it possible to monitor efficiently and quickly the variation of the NO 2 concentration. Interestingly, we found that enhancement-mode TFT (EM-TFT) allows discrimination of the drain current variation rate at NO 2 concentrations ≤10 ppm, whereas a depletion-mode TFT is adequate for discriminating NO 2 concentrations ≥10 ppm. This discrepancy is attributed to the ratio of charge carriers contributing to gas capture with respect to total carriers. This capacity for the excellent detection of low-concentration NO 2 gas can be realized through (i) three-terminal TFT gas sensors using amorphous oxide, (ii) measurement of the drain current variation rate for high selectivity, and (iii) an EM mode driven by tuning the electrical conductivity of channel layers.

Electronic system for data acquisition to study radiation effects on operating MOSFET transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alves de Oliveira, Juliano; Assis de Melo, Marco Antônio; Guazzelli da Silveira, Marcilei A.

In this work we present the development of an acquisition system for characterizing transistors under X-ray radiation. The system is able to carry out the acquisition and to storage characteristic transistor curves. To test the acquisition system we have submitted polarized P channel MOS transistors under continuous 10-keV X-ray doses up to 1500 krad. The characterization system can operate in the saturation region or in the linear region in order to observe the behavior of the currents or voltages involved during the irradiation process. Initial tests consisted of placing the device under test (DUT) in front of the X-ray beammore » direction, while its drain current was constantly monitored through the prototype generated in this work, the data are stored continuously and system behavior was monitored during the test. In order to observe the behavior of the DUT during the radiation tests, we used an acquisition system that consists of an ultra-low consumption16-bit Texas Instruments MSP430 microprocessor. Preliminary results indicate linear behavior of the voltage as a function of the exposure time and fast recovery. These features may be favorable to use this device as a radiation dosimeter to monitor low rate X-ray.« less

Improving Current Balance In Parallel MOSFET's

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1992-01-01

Simple circuit makes currents more nearly equal. Addition of diodes and adjustable-tap resistor increases operating range over which drain currents in two unmatched power MOSFET's brought more nearly into balance.

An analytical solution for predicting the transient seepage from a subsurface drainage system

NASA Astrophysics Data System (ADS)

Xin, Pei; Dan, Han-Cheng; Zhou, Tingzhang; Lu, Chunhui; Kong, Jun; Li, Ling

2016-05-01

Subsurface drainage systems have been widely used to deal with soil salinization and waterlogging problems around the world. In this paper, a mathematical model was introduced to quantify the transient behavior of the groundwater table and the seepage from a subsurface drainage system. Based on the assumption of a hydrostatic pressure distribution, the model considered the pore-water flow in both the phreatic and vadose soil zones. An approximate analytical solution for the model was derived to quantify the drainage of soils which were initially water-saturated. The analytical solution was validated against laboratory experiments and a 2-D Richards equation-based model, and found to predict well the transient water seepage from the subsurface drainage system. A saturated flow-based model was also tested and found to over-predict the time required for drainage and the total water seepage by nearly one order of magnitude, in comparison with the experimental results and the present analytical solution. During drainage, a vadose zone with a significant water storage capacity developed above the phreatic surface. A considerable amount of water still remained in the vadose zone at the steady state with the water table situated at the drain bottom. Sensitivity analyses demonstrated that effects of the vadose zone were intensified with an increased thickness of capillary fringe, capillary rise and/or burying depth of drains, in terms of the required drainage time and total water seepage. The analytical solution provides guidance for assessing the capillary effects on the effectiveness and efficiency of subsurface drainage systems for combating soil salinization and waterlogging problems.

Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets

NASA Astrophysics Data System (ADS)

Mativenga, Mallory; Kang, Dong Han; Lee, Ung Gi; Jang, Jin

2012-09-01

Bias instability of top-gate amorphous-indium-gallium-zinc-oxide thin-film transistors with source- and drain-offsets is reported. Positive and negative gate bias-stress (VG_STRESS) respectively induce reversible negative threshold-voltage shift (ΔVTH) and reduction in on-current. Migration of positive charges towards the offsets lowers the local resistance of the offsets, resulting in the abnormal negative ΔVTH under positive VG_STRESS. The reduction in on-current under negative VG_STRESS is due to increase in resistance of the offsets when positive charges migrate away from the offsets. Appropriate drain and source bias-stresses applied simultaneously with VG_STRESS either suppress or enhance the instability, verifying lateral ion migration to be the instability mechanism.

Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

NASA Astrophysics Data System (ADS)

Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei

2017-04-01

A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

Floods in southwest-central Florida from hurricane Frances, September 2004

USGS Publications Warehouse

Kane, Richard L.

2005-01-01

Hurricane Frances brought heavy rainfall and widespread flooding to southwest-central Florida September 4-14, 2004. The center of Hurricane Frances made landfall on the east coast of Florida on September 5 as a category 2 hurricane on the Saffir-Simpson scale, then moved west-northwestward through central Florida before exiting Pasco County into the Gulf of Mexico on September 6 (fig. 1; National Weather Service, 2004). The hurricane moved across the Florida Peninsula generating 5 to 11 inches of rain over already saturated ground (table 1). Record flooding occurred in parts of Hardee, Hillsborough, Pasco, and Polk Counties (fig. 1). The hurricane and resulting floods caused an estimated $4-5 billion in damage to public and private property (Harrington, 2004), and 23 deaths were attributed to Hurricane Frances (National Weather Service, 2004). Several watersheds drain counties in southwest-central Florida that were affected by Hurricane Frances. De Soto, Hardee, and Polk Counties generally are drained by the Peace River system, which flows southwestward to Charlotte Harbor and the Gulf of Mexico. Hillsborough and Pasco Counties generally are drained by the Alafia, Hillsborough, Anclote, and Pithlachascotee River systems. Water in the Hillsborough and Alafia River watersheds flows west to Tampa Bay and water in the Anclote and Pithlachascotee River watersheds flows west to the Gulf of Mexico. (fig. 1, http://water.usgs.gov/pubs/fs/2005/3028/#fig1).

A two-dimensional transient analytical solution for a ponded ditch drainage system under the influence of source/sink

NASA Astrophysics Data System (ADS)

Sarmah, Ratan; Tiwari, Shubham

2018-03-01

An analytical solution is developed for predicting two-dimensional transient seepage into ditch drainage network receiving water from a non-uniform steady ponding field from the surface of the soil under the influence of source/sink in the flow domain. The flow domain is assumed to be saturated, homogeneous and anisotropic in nature and have finite extends in horizontal and vertical directions. The drains are assumed to be standing vertical and penetrating up to impervious layer. The water levels in the drains are unequal and invariant with time. The flow field is also assumed to be under the continuous influence of time-space dependent arbitrary source/sink term. The correctness of the proposed model is checked by developing a numerical code and also with the existing analytical solution for the simplified case. The study highlights the significance of source/sink influence in the subsurface flow. With the imposition of the source and sink term in the flow domain, the pathline and travel time of water particles started deviating from their original position and above that the side and top discharge to the drains were also observed to have a strong influence of the source/sink terms. The travel time and pathline of water particles are also observed to have a dependency on the height of water in the ditches and on the location of source/sink activation area.

Effects of pond draining on biodiversity and water quality of farm ponds.

PubMed

Usio, Nisikawa; Imada, Miho; Nakagawa, Megumi; Akasaka, Munemitsu; Takamura, Noriko

2013-12-01

Farm ponds have high conservation value because they contribute significantly to regional biodiversity and ecosystem services. In Japan pond draining is a traditional management method that is widely believed to improve water quality and eradicate invasive fish. In addition, fishing by means of pond draining has significant cultural value for local people, serving as a social event. However, there is a widespread belief that pond draining reduces freshwater biodiversity through the extirpation of aquatic animals, but scientific evaluation of the effectiveness of pond draining is lacking. We conducted a large-scale field study to evaluate the effects of pond draining on invasive animal control, water quality, and aquatic biodiversity relative to different pond-management practices, pond physicochemistry, and surrounding land use. The results of boosted regression-tree models and analyses of similarity showed that pond draining had little effect on invasive fish control, water quality, or aquatic biodiversity. Draining even facilitated the colonization of farm ponds by invasive red swamp crayfish (Procambarus clarkii), which in turn may have detrimental effects on the biodiversity and water quality of farm ponds. Our results highlight the need for reconsidering current pond management and developing management plans with respect to multifunctionality of such ponds. Efectos del Drenado de Estanques sobre la Biodiversidad y la Calidad del Agua en Estanques de Cultivo. © 2013 Society for Conservation Biology.

Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Woo-Sic; Cho, Yong-Jung; Lee, Yeol-Hyeong; Park, JeongKi; Kim, GeonTae; Kim, Ohyun

2017-11-01

We investigated the degradation mechanism of a-InGaZnO TFTs under simultaneous gate and drain bias stress. Gate and drain bias of 20 V were applied simultaneously to induce current stress, and abnormal turn-around behavior in transfer characteristics with a hump phenomenon were identified. Hump characteristics were interpreted in terms of parasitic current path, and the degradation itself was found to be caused dominantly by the electrical field and to be accelerated with current by Joule heating. The mechanism of asymmetrical degradation after current stress was also investigated. By decomposing the curves into two curves and measuring the relaxation behavior of the stressed TFTs, we also found that abnormal turn-around behavior in the transfer characteristics was related to acceptor-like states.

ZnO-based multiple channel and multiple gate FinMOSFETs

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Huang, Hung-Lin; Tseng, Chun-Yen; Lee, Hsin-Ying

2016-02-01

In recent years, zinc oxide (ZnO)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted much attention, because ZnO-based semiconductors possess several advantages, including large exciton binding energy, nontoxicity, biocompatibility, low material cost, and wide direct bandgap. Moreover, the ZnO-based MOSFET is one of most potential devices, due to the applications in microwave power amplifiers, logic circuits, large scale integrated circuits, and logic swing. In this study, to enhance the performances of the ZnO-based MOSFETs, the ZnObased multiple channel and multiple gate structured FinMOSFETs were fabricated using the simple laser interference photolithography method and the self-aligned photolithography method. The multiple channel structure possessed the additional sidewall depletion width control ability to improve the channel controllability, because the multiple channel sidewall portions were surrounded by the gate electrode. Furthermore, the multiple gate structure had a shorter distance between source and gate and a shorter gate length between two gates to enhance the gate operating performances. Besides, the shorter distance between source and gate could enhance the electron velocity in the channel fin structure of the multiple gate structure. In this work, ninety one channels and four gates were used in the FinMOSFETs. Consequently, the drain-source saturation current (IDSS) and maximum transconductance (gm) of the ZnO-based multiple channel and multiple gate structured FinFETs operated at a drain-source voltage (VDS) of 10 V and a gate-source voltage (VGS) of 0 V were respectively improved from 11.5 mA/mm to 13.7 mA/mm and from 4.1 mS/mm to 6.9 mS/mm in comparison with that of the conventional ZnO-based single channel and single gate MOSFETs.

Novel fen ecosystems in western North Carolina

NASA Astrophysics Data System (ADS)

Wilcox, J. D.

2012-12-01

Western North Carolina is mountainous, and groundwater flows from hillslope recharge zones to valley stream and spring discharge zones. Depending on surface topography and geologic conditions, the water table may approach or intersect the ground surface to form seepage wetlands, or fens. Fen ecosystems can be very sensitive to changes in land use, groundwater pumping, and upslope development. This presentation will focus on two sites where historical land use and human activity played important roles in creating or preserving fen ecosystems. Both sites now support—and are being managed to protect—federally endangered flora and fauna. The first site is home to Sarracenia oreophilia, an endangered pitcher plant that thrives on saturated soils with low nutrient content. The site's early history includes tree clearing, drain tile installation, and cattle grazing, while more recent management activities have included drain tile excavation, manual invasive removal, and prescribed burns. A 15-year water-level record indicates seasonal artesian conditions wet a 3m clay unit (K=2E-5 cm/sec) beneath the site, which is able to retain moisture during drier periods. Shorter "clay wetting periods" during drought years (1999-2000; 2007-2008) correspond to reduced clump counts in pitcher-plant surveys. The second site is a former aggregate quarry that now supports over 60 bog turtles (Clemmys muhlenbergii). The biggest threat to this site is encroachment of non-native and invasive multiflora rose (Rosa multiflora) and other large woody species. Management activities include manual removal and prescribed goat herbivory. Current efforts to characterize the springs, water-table, and surface-water flows will be used to detect changes in the future to the hydrologic regime in the fen.

Self-heating and scaling of thin body transistors

NASA Astrophysics Data System (ADS)

Pop, Eric

The most often cited technological roadblock of nanoscale electronics is the "power problem," i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. Technology roadmap (ITRS) requirements are expected to lead to more heat dissipation problems, especially with the transition towards geometrically confined device geometries (SOI, FinFET, nanowires), and new materials with poor thermal properties. This work examines the physics of heat generation in silicon, and in the context of nanoscale CMOS transistors. A new Monte Carlo code (MONET) is introduced which uses analytic descriptions of both the electron bands and the phonon dispersion. Detailed heat generation statistics are computed in bulk and strained silicon, and within simple device geometries. It is shown that non-stationary transport affects heat generation near strongly peaked electric fields, and that self-heating occurs almost entirely in the drain end of short, quasi-ballistic devices. The dissipated power is spectrally distributed between the (slow) optical and (fast) acoustic phonon modes approximately by a ratio of two to one. In addition, this work explores the limits of device design and scaling from an electrical and thermal point of view. A self-consistent electro-thermal compact model for thin-body (SOI, GOI) devices is introduced for calculating operating temperature, saturation current and intrinsic gate delay. Self-heating is sensitive to several device parameters, such as raised source/drain height and material boundary thermal resistance. An experimental method is developed for extracting via/contact thermal resistance from electrical measurements. The analysis suggests it is possible to optimize device geometry in order to simultaneously minimize operating temperature and intrinsic gate delay. Electro-thermal contact and device design are expected to become more important with continued scaling.

Analytical results from an environmental investigation of six sites on Kirtland Air Force Base, New Mexico, 1993-94

USGS Publications Warehouse

Wilcox, Ralph

1995-01-01

The six sites investigated include silver recovery units; a buried caustic drain line; a neutralization pit; an evaporation/infiltration pond; the Manzano fire training area; and a waste oil underground storage tank. Environmental samples of soil, pond sediment, soil gas, and water and gas in floor drains were collected and analyzed. Field quality-control samples were also collected and analyzed in association with the environmental samples. The six sites were investigated because past or current activities could have resulted in contamination of soil, pond sediment, or water and sediment in drains.

Effect of current on the maximum possible reward.

PubMed

Gallistel, C R; Leon, M; Waraczynski, M; Hanau, M S

1991-12-01

Using a 2-lever choice paradigm with concurrent variable interval schedules of reward, it was found that when pulse frequency is increased, the preference-determining rewarding effect of 0.5-s trains of brief cathodal pulses delivered to the medial forebrain bundle of the rat saturates (stops increasing) at values ranging from 200 to 631 pulses/s (pps). Raising the current lowered the saturation frequency, which confirms earlier, more extensive findings showing that the rewarding effect of short trains saturates at pulse frequencies that vary from less than 100 pps to more than 800 pps, depending on the current. It was also found that the maximum possible reward--the magnitude of the reward at or beyond the saturation pulse frequency--increases with increasing current. Thus, increasing the current reduces the saturation frequency but increases the subjective magnitude of the maximum possible reward.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Chu-Lin; Perfect, Edmund; Kang, Misun

Water retention curves are essential for understanding the hydrologic behavior of partially-saturated porous media and modeling flow transport processes within the vadose zone. In this paper we report direct measurements of the main drying and wetting branches of the average water retention function obtained using 2-dimensional neutron radiography. Flint sand columns were saturated with water and then drained under quasi-equilibrium conditions using a hanging water column setup. Digital images (2048 x 2048 pixels) of the transmitted flux of neutrons were acquired at each imposed matric potential (~10-15 matric potential values per experiment) at the NCNR BT-2 neutron imaging beam line.more » Volumetric water contents were calculated on a pixel by pixel basis using Beer-Lambert s law after taking into account beam hardening and geometric corrections. To remove scattering effects at high water contents the volumetric water contents were normalized (to give relative saturations) by dividing the drying and wetting sequences of images by the images obtained at saturation and satiation, respectively. The resulting pixel values were then averaged and combined with information on the imposed basal matric potentials to give average water retention curves. The average relative saturations obtained by neutron radiography showed an approximate one-to-one relationship with the average values measured volumetrically using the hanging water column setup. There were no significant differences (at p < 0.05) between the parameters of the van Genuchten equation fitted to the average neutron radiography data and those estimated from replicated hanging water column data. Our results indicate that neutron imaging is a very effective tool for quantifying the average water retention curve.« less

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

NASA Astrophysics Data System (ADS)

Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

2017-09-01

A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

A pH sensor based on electric properties of nanotubes on a glass substrate

PubMed Central

Nakamura, Motonori; Ishii, Atsushi; Subagyo, Agus; Hosoi, Hirotaka; Sueoka, Kazuhisa; Mukasa, Koichi

2007-01-01

We fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling agent on the nanotube. The device showed properties of ann-type field effect transistor when a potential was applied to the nanotube from the top gate electrode. Before fabrication of the insulating layer, the device showed that thep-type field effect transistor and the current through the source and drain electrodes depend on the buffer pH. The current increases with decreasing pH of the CNT solution. This device, which can detect pH, is applicable for use as a biosensor through modification of the CNT surface. PMID:21806848

Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET

NASA Astrophysics Data System (ADS)

Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng

2014-01-01

In this work, three dimensional technology computer-aided design (TCAD) simulations are performed to investigate the impact of random discrete dopant (RDD) including extension induced fluctuation in 14 nm silicon-on-insulator (SOI) gate-source/drain (G-S/D) underlap fin field effect transistor (FinFET). To fully understand the RDD impact in extension, RDD effect is evaluated in channel and extension separately and together. The statistical variability of FinFET performance parameters including threshold voltage (Vth), subthreshold slope (SS), drain induced barrier lowering (DIBL), drive current (Ion), and leakage current (Ioff) are analyzed. The results indicate that RDD in extension can lead to substantial variability, especially for SS, DIBL, and Ion and should be taken into account together with that in channel to get an accurate estimation on RDF. Meanwhile, higher doping concentration of extension region is suggested from the perspective of overall variability control.

Hierarchical Approach to 'Atomistic' 3-D MOSFET Simulation

NASA Technical Reports Server (NTRS)

Asenov, Asen; Brown, Andrew R.; Davies, John H.; Saini, Subhash

1999-01-01

We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1 micron MOSFET's. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.

Comparative Evaluation of Immediate Post-Operative Sequelae after Surgical Removal of Impacted Mandibular Third Molar with or without Tube Drain - Split-Mouth Study.

PubMed

Kumar, Barun; Bhate, Kalyani; Dolas, R S; Kumar, Sn Santhosh; Waknis, Pushkar

2016-12-01

Third molar surgery is one of the most common surgical procedures performed in general dentistry. Post-operative variables such as pain, swelling and trismus are major concerns after impacted mandibular third molar surgery. Use of passive tube drain is supposed to help reduce these immediate post-operative sequelae. The current study was designed to compare the effect of tube drain on immediate post-operative sequelae following impacted mandibular third molar surgery. To compare the post-operative sequelae after surgical removal of impacted mandibular third molar surgery with or without tube drain. Thirty patients with bilateral impacted mandibular third molars were divided into two groups: Test (with tube drain) and control (without tube drain) group. In the test group, a tube drain was inserted through the releasing incision, and kept in place for three days. The control group was left without a tube drain. The post-operative variables like, pain, swelling, and trismus were calculated after 24 hours, 72 hours, 7 days, and 15 days in both the groups and analyzed statistically using chi-square and t-test analysis. The test group showed lesser swelling as compared to control group, with the swelling variable showing statistically significant difference at post-operative day 3 and 7 (p≤ 0.05) in both groups. There were no statistically significant differences in pain and trismus variables in both the groups. The use of tube drain helps to control swelling following impacted mandibular third molar surgery. However, it does not have much effect on pain or trismus.

Aptamer-Based Carboxyl-Terminated Nanocrystalline Diamond Sensing Arrays for Adenosine Triphosphate Detection.

PubMed

Suaebah, Evi; Naramura, Takuro; Myodo, Miho; Hasegawa, Masataka; Shoji, Shuichi; Buendia, Jorge J; Kawarada, Hiroshi

2017-07-21

Here, we propose simple diamond functionalization by carboxyl termination for adenosine triphosphate (ATP) detection by an aptamer. The high-sensitivity label-free aptamer sensor for ATP detection was fabricated on nanocrystalline diamond (NCD). Carboxyl termination of the NCD surface by vacuum ultraviolet excimer laser and fluorine termination of the background region as a passivated layer were investigated by X-ray photoelectron spectroscopy. Single strand DNA (amide modification) was used as the supporting biomolecule to immobilize into the diamond surface via carboxyl termination and become a double strand with aptamer. ATP detection by aptamer was observed as a 66% fluorescence signal intensity decrease of the hybridization intensity signal. The sensor operation was also investigated by the field-effect characteristics. The shift of the drain current-drain voltage characteristics was used as the indicator for detection of ATP. From the field-effect characteristics, the shift of the drain current-drain voltage was observed in the negative direction. The negative charge direction shows that the aptamer is capable of detecting ATP. The ability of the sensor to detect ATP was investigated by fabricating a field-effect transistor on the modified NCD surface.

Saturation current and collection efficiency for ionization chambers in pulsed beams.

PubMed

DeBlois, F; Zankowski, C; Podgorsak, E B

2000-05-01

Saturation currents and collection efficiencies in ionization chambers exposed to pulsed megavoltage photon and electron beams are determined assuming a linear relationship between 1/I and 1/V in the extreme near-saturation region, with I and V the chamber current and polarizing voltage, respectively. Careful measurements of chamber current against polarizing voltage in the extreme near-saturation region reveal a current rising faster than that predicted by the linear relationship. This excess current combined with conventional "two-voltage" technique for determination of collection efficiency may result in an up to 0.7% overestimate of the saturation current for standard radiation field sizes of 10X10 cm2. The measured excess current is attributed to charge multiplication in the chamber air volume and to radiation-induced conductivity in the stem of the chamber (stem effect). These effects may be accounted for by an exponential term used in conjunction with Boag's equation for collection efficiency in pulsed beams. The semiempirical model follows the experimental data well and accounts for both the charge recombination as well as for the charge multiplication effects and the chamber stem effect.

Origin of threshold voltage fluctuation caused by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors using three-dimensional process and device simulations

NASA Astrophysics Data System (ADS)

Tsutsumi, Toshiyuki

2018-06-01

The threshold voltage (V th) fluctuation induced by ion implantation (I/I) in the source and drain extensions (SDEs) of a silicon-on-insulator (SOI) triple-gate (Tri-Gate) fin-type field-effect transistor (FinFET) was analyzed by both three-dimensional (3D) process and device simulations collaboratively. The origin of the V th fluctuation induced by the SDE I/I is basically a variation of a bottleneck barrier height (BBH) due to implanted arsenic (As+) ions. In particular, a very low and broad V th distribution in the saturation region is due to percolative conduction in addition to the BBH variation. Moreover, it is surprisingly found that the V th fluctuation is mostly characterized by the BBH of only a top surface center line of a Si fin of the device. Our collaborative approach by 3D process and device simulations is dispensable for the accurate investigation of variability-tolerant devices. The obtained results are beneficial for the research and development of such future devices.

Calcite saturation in the River Dee, NE Scotland.

PubMed

Wade, A J; Neal, C; Smart, R P; Edwards, A C

2002-01-23

The spatial and temporal variations in calcite (calcium carbonate) solubility within the Dee basin of NE Scotland were assessed using water chemistry data gathered from a network of 59 sites monitored for water quality from June 1996 to May 1997. Calcite solubility, expressed in terms of a saturation index (SIcalcite), was determined from measured streamwater pH, Gran alkalinity and calcium concentrations and water temperature. In general, the waters of the Dee system are undersaturated with respect to calcite, though the saturation index is higher during the summer months indicating a dependency on flow conditions and biological activity. Under low-flow conditions, the streamwaters are dominated by water derived from the lower soil horizons and deeper groundwater stores and therefore, ions such as Gran alkalinity and calcium are at their highest concentrations as they are derived mainly from bedrock weathering. The influence of biological activity on the carbonate system is also evident as the observed pH and estimated EpCO2 values indicate strong seasonal patterns, with the highest pH and lowest EpCO2 values occurring during the summer low-flow periods. Only at three sites in the lowland region of the catchment, during the summer low-flow period, are the waters oversaturated. As such, the Dee system represents an extreme 'end-member' case when compared to many UK rivers that span both under- and oversaturated conditions during the year. Regression analysis highlights a systematic change in the SIcalcite-pH relationship in a broad east-west direction across the Dee system. At sites draining the relatively impermeable upland areas, the regression of SIcalcite against pH gives a straight line with a gradient in the range 1.6-2.4. Correspondingly, under the most extreme alkaline conditions found at sites draining lowland agricultural areas, a straight-line relationship exists but with a gradient of unity. It is concluded that these changes in the SIcalcite-pH relationship are due to variations in the bicarbonate system induced by the flow conditions and biological activity. Given the waters are undersaturated, then calcite precipitation and hence phosphorus co-precipitation cannot occur within the water column.

Effectiveness of Postoperative Wound Drains in One- and Two-Level Cervical Spine Fusions

PubMed Central

Poorman, Caroline E.; Bianco, Kristina M.; Boniello, Anthony; Yang, Sun; Gerling, Michael C.

2014-01-01

Background Cervical drains have historically been used to avoid postoperative wound and respiratory complications such as excessive edema, hematoma, infection, re-intubation, delayed extubation, or respiratory distress. Recently, some surgeons have ceased using drains because they may prolong hospital stay, operative time, or patient discomfort. The objective of this retrospective case-control series is to investigate the effectiveness of postoperative drains following one- and two-level cervical fusions. Methods A chart review was conducted at a single institution from 2010-2013. Outcome measures included operative time, hospital stay, estimated blood loss and incidence of wound complications (infection, hematoma, edema, and complications with wound healing or evacuation), respiratory complications (delayed extubation, re-intubation, and respiratory treatment), and overall complications (wound complications, respiratory complications, dysphagia, and other complications). Statistical analyses including independent samples t-test, chi-square, analysis of covariance, and linear regression were used to compare patients who received a postoperative drain to those who did not. Results The study population included 39 patients who received a postoperative drain and 42 patients who did not. There were no differences in demographics between the two groups. Patients with drains showed increased operative time (100.1 vs 69.3 min, p < 0.001), hospital stay (38.9 vs. 31.7 hrs, p = 0.021), and blood loss (62.7 vs 29.1 mL, p < 0.001) compared to patients without drains. The frequency of wound complications, respiratory complications, and overall complications did not vary significantly between groups. Conclusions/Level of Evidence Cervical drains may not be necessary for patients undergoing one- and two-level cervical fusion. While there were no differences in incidence of complications between groups, patients treated with drains had significantly longer operative time and length of hospital stay. Clinical relevance This could contribute to excessive costs for patients treated with drains, despite the lack of compelling evidence of the advantages of this treatment in the literature and in the current study. PMID:25694927

Photocurrent microscopy of contact resistance and charge carrier traps in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liewald, C.; Reiser, D.; Westermeier, C.; Nickel, B.

2016-08-01

We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.

A steady state solution for ditch drainage problem with special reference to seepage face and unsaturated zone flow contribution: Derivation of a new drainage spacing eqaution

NASA Astrophysics Data System (ADS)

Yousfi, Ammar; Mechergui, Mohammed

2016-04-01

The seepage face is an important feature of the drainage process when recharge occurs to a permeable region with lateral outlets. Examples of the formation of a seepage face above the downstream water level include agricultural land drained by ditches. Flow problem to these drains has been investigated extensively by many researchers (e.g. Rubin, 1968; Hornberger et al. 1969; Verma and Brutsaert, 1970; Gureghian and Youngs, 1975; Vauclin et al., 1975; Skaggs and Tang, 1976; Youngs, 1990; Gureghian, 1981; Dere, 2000; Rushton and Youngs, 2010; Youngs, 2012; Castro-Orgaz et al., 2012) and may be tackled either using variably saturated flow models, or the complete 2-D solution of Laplace equation, or using the Dupuit-Forchheimer approximation; the most widely accepted methods to obtain analytical solutions for unconfined drainage problems. However, the investigation reported by Clement et al. (1996) suggest that accounting for the seepage face alone, as in the fully saturated flow model, does not improve the discharge estimate because of disregarding flow the unsaturated zone flow contribution. This assumption can induce errors in the location of the water table surface and results in an underestimation of the seepage face and the net discharge (e.g. Skaggs and Tang, 1976; Vauclin et al., 1979; Clement et al., 1996). The importance of the flow in the unsaturated zone has been highlighted by many authors on the basis of laboratory experiments and/or numerical experimentations (e.g. Rubin, 1968; Verma and Brutsaert, 1970; Todsen, 1973; Vauclin et al., 1979; Ahmad et al., 1993; Anguela, 2004; Luthin and Day, 1955; Shamsai and Narasimhan, 1991; Wise et al., 1994; Clement et al., 1996; Boufadel et al., 1999; Romano et al., 1999; Kao et al., 2001; Kao, 2002). These studies demonstrate the failure of fully saturated flow models and suggested that the error made when using these models not only depends on soil properties but also on the infiltration rate as reported by Kao et al. (2001). In this work, a novel solution based on theoretical approach will be adapted to incorporate both the seepage face and the unsaturated zone flow contribution for solving ditch drained aquifers problems. This problem will be tackled on the basis of the approximate 2D solution given by Castro-Orgaz et al. (2012). This given solution yields the generalized water table profile function with a suitable boundary condition to be determined and provides a modified DF theory which permits as an outcome the analytical determination of the seepage face. To assess the ability of the developed equation for water-table estimations, the obtained results were compared with numerical solutions to the 2-D problem under different conditions. It is shown that results are in fair agreement and thus the resulting model can be used for designing ditch drainage systems. With respect to drainage design, the spacings calculated with the newly derived equation are compared with those computed from the DF theory. It is shown that the effect of the unsaturated zone flow contribution is limited to sandy soils and The calculated maximum increase in drain spacing is about 30%. Keywords: subsurface ditch drainage; unsaturated zone; seepage face; water-table, ditch spacing equation

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

PubMed

Oh, S K; Song, C G; Jang, T; Kim, Kwang-Choong; Jo, Y J; Kwak, J S

2013-03-01

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.

Geomechanical Behaviors of Laboratory-Formed Non-Cementing Hydrate-Bearing Sediments

NASA Astrophysics Data System (ADS)

Seol, Y.

2015-12-01

Natural hydrate-bearing sediments (HBS) have been known to exist with non-cementing pore habits, i.e., pore-filling, load-bearing, or patchy type. However, few laboratory studies have been conducted to characterize geomechanical behaviors of non-cementing CH4-HBS, which are of great importance in engineering the process of drilling and gas production in natural hydrate reservoir. In this study, we conducted multi-stage drained triaxial tests on laboratory synthesized CH4-HBS samples, which were formed in sand-clay mixtures (5%wt kaolinite) to have non-cementing habits. Three different effective confining stresses, σ3' = 0.69, 1.38, and 2.76 MPa, were applied on the HBS with the hydrate saturation, Sh, in the range of 0 to ~ 40%. The result confirms that the strength and stiffness of HBS increases with effective confining stress and hydrate saturation. It is also demonstrated that when compared to the cementing HBS, the non-cementing HBS has lower strength and cohesion, owing to less inter-particle adhesion effects from non-cementing hydrate.

Land Capability Potential Index (LCPI) for the Lower Missouri River Valley

USGS Publications Warehouse

Jacobson, Robert B.; Chojnacki, Kimberly A.; Reuter, Joanna M.

2007-01-01

The Land Capability Potential Index (LCPI) was developed to serve as a relatively coarse-scale index to delineate broad land capability classes in the valley of the Lower Missouri River. The index integrates fundamental factors that determine suitability of land for various uses, and may provide a useful mechanism to guide land-management decisions. The LCPI was constructed from integration of hydrology, hydraulics, land-surface elevations, and soil permeability (or saturated hydraulic conductivity) datasets for an area of the Lower Missouri River, river miles 423–670. The LCPI estimates relative wetness based on intersecting water-surface elevations, interpolated from measurements or calculated from hydraulic models, with a high-resolution land-surface elevation dataset. The potential for wet areas to retain or drain water is assessed using soil-drainage classes that are estimated from saturated hydraulic conductivity of surface soils. Terrain mapping that delineates areas with convex, concave, and flat parts of the landscape provides another means to assess tendency of landscape patches to retain surface water.

SLD-MOSCNT: A new MOSCNT with step-linear doping profile in the source and drain regions

NASA Astrophysics Data System (ADS)

Tahne, Behrooz Abdi; Naderi, Ali

2017-01-01

In this paper, a new structure, step-linear doping MOSCNT (SLD-MOSCNT), is proposed to improve the performance of basic MOSCNTs. The basic structure suffers from band to band tunneling (BTBT). We show that using SLD profile for source and drain regions increases the horizontal distance between valence and conduction bands at gate to source/drain junction which reduces BTBT probability. SLD performance is compared with other similar structures which have recently been proposed to reduce BTBT such as MOSCNT with lightly-doped drain and source (LDDS), and with double-light doping in source and drain regions (DLD). The obtained results using a nonequilibrium Green’s function (NEGF) method show that the SLD-MOSCNT has the lowest leakage current, power consumption and delay time, and the highest current ratio and voltage gain. The ambipolar conduction in the proposed structure is very low and can be neglected. In addition, these structures can improve short-channel effects. Also, the investigation of cutoff frequency of the different structures shows that the SLD has the highest cutoff frequency. Device performance has been investigated for gate length from 8 to 20 nm which demonstrates all discussions regarding the superiority of the proposed structure are also valid for different channel lengths. This improvement is more significant especially for channel length less than 12 nm. Therefore, the SLD can be considered as a candidate to be used in the applications with high speed and low power consumption.

Measurements of the Low Frequency Gain Fluctuations of a 30 GHz High-Electron-Mobility-Transistor Cryogenic Amplifier

NASA Technical Reports Server (NTRS)

Jarosik, Norman

1994-01-01

Low frequency gain fluctuations of a 30 GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15 K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.

Poroelasticity of the Callovo-Oxfordian Claystone

NASA Astrophysics Data System (ADS)

Belmokhtar, Malik; Delage, Pierre; Ghabezloo, Siavash; Tang, Anh-Minh; Menaceur, Hamza; Conil, Nathalie

2017-04-01

This work is devoted to an experimental investigation of the poroelastic behavior of the Callovo-Oxfordian claystone, a potential host rock for the deep underground repository of high-level radioactive waste in France. Drained, undrained, pore pressure loading and unjacketed tests were carried out in a specially designed isotropic compression cell to determine the poroelastic parameters of fully saturated specimens. Great care was devoted to the saturation procedure, and small loading rates were used to ensure full drainage conditions in drained and pore pressure tests (0.5 kPa/min) and in the unjacketed test (2 kPa/min). High-precision strain measurements were performed by ensuring direct contact between the LVDT stems and the specimen. An analysis in the framework of transverse isotropic poroelasticity provided the Biot effective stress coefficients b 1 (perpendicular to bedding) between 0.85 and 0.87 and b 2 (parallel to bedding) between 0.90 and 0.98 under different stress conditions (pore pressure 4 MPa, total isotropic stresses of 14 and 12 MPa, respectively). A set of equivalent isotropic poroelastic parameters was also determined and a very good compatibility between the results of different tests was found, giving confidence in the parameters determined. The unjacketed test provided a directly reliable measurement of the unjacketed modulus ( K s = 21.7 GPa) that was afterward confirmed by an indirect evaluation that showed the non-dependency of K s with respect to the stress level. These parameters were obtained for specimens cored and trimmed in the laboratory. A parametric study was then conducted so as to provide an estimation of the parameters in situ, i.e., not submitted to the damage supported by laboratory specimens. A minimal value b = 0.77 seems to be a reasonable lower bound for the equivalent isotropic Biot parameter.

Simulations of ecosystem hydrological processes using a unified multi-scale model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xiaofan; Liu, Chongxuan; Fang, Yilin

2015-01-01

This paper presents a unified multi-scale model (UMSM) that we developed to simulate hydrological processes in an ecosystem containing both surface water and groundwater. The UMSM approach modifies the Navier–Stokes equation by adding a Darcy force term to formulate a single set of equations to describe fluid momentum and uses a generalized equation to describe fluid mass balance. The advantage of the approach is that the single set of the equations can describe hydrological processes in both surface water and groundwater where different models are traditionally required to simulate fluid flow. This feature of the UMSM significantly facilitates modelling ofmore » hydrological processes in ecosystems, especially at locations where soil/sediment may be frequently inundated and drained in response to precipitation, regional hydrological and climate changes. In this paper, the UMSM was benchmarked using WASH123D, a model commonly used for simulating coupled surface water and groundwater flow. Disney Wilderness Preserve (DWP) site at the Kissimmee, Florida, where active field monitoring and measurements are ongoing to understand hydrological and biogeochemical processes, was then used as an example to illustrate the UMSM modelling approach. The simulations results demonstrated that the DWP site is subject to the frequent changes in soil saturation, the geometry and volume of surface water bodies, and groundwater and surface water exchange. All the hydrological phenomena in surface water and groundwater components including inundation and draining, river bank flow, groundwater table change, soil saturation, hydrological interactions between groundwater and surface water, and the migration of surface water and groundwater interfaces can be simultaneously simulated using the UMSM. Overall, the UMSM offers a cross-scale approach that is particularly suitable to simulate coupled surface and ground water flow in ecosystems with strong surface water and groundwater interactions.« less

A brief clinical case of monitoring of oxygenator performance and patient-machine interdependency during prolonged veno-venous extracorporeal membrane oxygenation.

PubMed

Belliato, Mirko; Degani, Antonella; Buffa, Antonino; Sciutti, Fabio; Pagani, Michele; Pellegrini, Carlo; Iotti, Giorgio Antonio

2017-10-01

Monitoring veno-venous extracorporeal membrane oxygenation (vvECMO) during 76 days of continuous support in a 42-years old patient with end-stage pulmonary disease, listed for double-lung transplantation. Applying a new monitor (Landing ® , Eurosets, Medolla, Italy) and describing how measured and calculated parameters can be used to understand the variable interdependency between artificial membrane lung (ML) and patient native lung (NL). During vvECMO, in order to understand how the respiratory function is shared between ML and NL, ideally we should obtain data about oxygen transfer and CO 2 removal, both by ML and NL. Measurements for NL can be made on the mechanical ventilator. Measurements for ML are typically made from gas analysis on blood samples drawn from the ECMO system before and after the oxygenator, and therefore are non-continuous. Differently, the Landing monitor provides a continuous measurement of the oxygen transfer from the ML, combined with hemoglobin level, saturation of drained blood and saturation of reinfused blood. Moreover, the Landing monitor provides hemodynamics data about circulation through the ECMO system, with blood flow, pre-oxygenator pressure and post-oxygenator pressure. Of note, measurements include the drain negative pressure, whose monitoring may be particularly useful to prevent hemolysis. Real-time monitoring of vvECMO provides data helpful to understand the complex picture of a patient with severely damaged lungs on one side and an artificial lung on the other side. Data from vvECMO monitoring may help to adapt the settings of both mechanical ventilator and vvECMO. Data about oxygen transfer by the oxygenator are important to evaluate the performance of the device and may help to avoid unnecessary replacements, thus reducing risks and costs.

A Preliminary Design of a Calibration Chamber for Evaluating the Stability of Unsaturated Soil Slope

NASA Astrophysics Data System (ADS)

Hsu, H.-H.

2012-04-01

The unsaturated soil slopes, which have ground water tables and are easily failure caused by heavy rainfalls, are widely distributed in the arid and semi-arid areas. For analyzing the stability of slope, in situ tests are the direct methods to obtain the test site characteristics. The cone penetration test (CPT) is a popular in situ test method. Some of the CPT empirical equations established from calibration chamber tests. The CPT performed in calibration chamber was commonly used clean quartz sand as testing material in the past. The silty sand is observed in many actual slopes. Because silty sand is relatively compressible than quartz sand, it is not suitable to apply the correlations between soil properties and CPT results built from quartz sand to silty sand. The experience on CPT calibration in silty sand has been limited. CPT calibration tests were mostly performed in dry or saturated soils. The condition around cone tip during penetration is assumed to be fully drained or fully undrained, yet it was observed to be partially drained for unsaturated soils. Because of the suction matrix has a great effect on the characteristics of unsaturated soils, they are much sensitive to the water content than saturated soils. The design of an unsaturated calibration chamber is in progress. The air pressure is supplied from the top plate and the pore water pressure is provided through the high air entry value ceramic disks located at the bottom plate of chamber cell. To boost and uniform distribute the unsaturated effect, four perforated burettes are installed onto the ceramic disks and stretch upwards to the midheight of specimen. This paper describes design concepts, illustrates this unsaturated calibration chamber, and presents the preliminary test results.

The relationship of catchment topography and soil hydraulic characteristics to lake alkalinity in the northeastern United States

USGS Publications Warehouse

Wolock, D.M.; Hornberger, G.M.; Beven, K.J.; Campbell, W.G.

1989-01-01

We undertook the task of determining whether base flow alkalinity of surface waters in the northeastern United States is related to indices of soil contact time and flow path partitioning that are derived from topographic and soils information. The influence of topography and soils on catchment hydrology has been incorporated previously in the variable source area model TOPMODEL as the relative frequency distribution of ln (a/Kb tan B), where ln is the Naperian logarithm, “a” is the area drained per unit contour, K is the saturated hydraulic conductivity, b is the soil depth, and tan B is the slope. Using digital elevation and soil survey data, we calculated the ln (a/Kb tan B) distribution for 145 catchments. Indices of flow path partitioning and soil contact time were derived from the ln (a/Kb tan B) distributions and compared to measurements of alkalinity in lakes to which the catchments drain. We found that alkalinity was, in general, positively correlated with the index of soil contact time, whereas the correlation between alkalinity and the flow path partitioning index was weak at best. A portion of the correlation between the soil contact time index and alkalinity was attributable to covariation with soil base saturation and cation exchange capacity, while another portion was found to be independent of these factors. Although our results indicate that catchments with long soil contact time indices are most likely to produce high alkalinity base flow, a sensitivity analysis of TOPMODEL suggests that surface waters of these same watersheds may be susceptible to alkalinity depressions during storm events, due to the role of flow paths.

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

NASA Astrophysics Data System (ADS)

Cho, Yong-Jung; Kim, Woo-Sic; Lee, Yeol-Hyeong; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

2018-06-01

We investigated the mechanism of formation of the hump that occurs in the current-voltage I-V characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) that are exposed to long-term drain bias stress under illumination. Transfer characteristics showed two-stage degradation under the stress. At the beginning of the stress, the I-V characteristics shifted in the negative direction with a degradation of subthreshold slope, but the hump phenomenon developed over time in the I-V characteristics. The development of the hump was related to creation of defects, especially ionized oxygen vacancies which act as shallow donor-like states near the conduction-band minimum in a-IGZO. To further investigate the hump phenomenon we measured a capacitance-voltage C-V curve and performed two-dimensional device simulation. Stretched-out C-V for the gate-to-drain capacitance and simulated electric field distribution which exhibited large electric field near the drain side of TFT indicated that VO2+ were generated near the drain side of TFT, but the hump was not induced when VO2+ only existed near the drain side. Therefore, the degradation behavior under DBITS occurred because VO2+ were created near the drain side, then were migrated to the source side of the TFT.

Identifying Hydrologic Processes in Agricultural Watersheds Using Precipitation-Runoff Models

USGS Publications Warehouse

Linard, Joshua I.; Wolock, David M.; Webb, Richard M.T.; Wieczorek, Michael

2009-01-01

Understanding the fate and transport of agricultural chemicals applied to agricultural fields will assist in designing the most effective strategies to prevent water-quality impairments. At a watershed scale, the processes controlling the fate and transport of agricultural chemicals are generally understood only conceptually. To examine the applicability of conceptual models to the processes actually occurring, two precipitation-runoff models - the Soil and Water Assessment Tool (SWAT) and the Water, Energy, and Biogeochemical Model (WEBMOD) - were applied in different agricultural settings of the contiguous United States. Each model, through different physical processes, simulated the transport of water to a stream from the surface, the unsaturated zone, and the saturated zone. Models were calibrated for watersheds in Maryland, Indiana, and Nebraska. The calibrated sets of input parameters for each model at each watershed are discussed, and the criteria used to validate the models are explained. The SWAT and WEBMOD model results at each watershed conformed to each other and to the processes identified in each watershed's conceptual hydrology. In Maryland the conceptual understanding of the hydrology indicated groundwater flow was the largest annual source of streamflow; the simulation results for the validation period confirm this. The dominant source of water to the Indiana watershed was thought to be tile drains. Although tile drains were not explicitly simulated in the SWAT model, a large component of streamflow was received from lateral flow, which could be attributed to tile drains. Being able to explicitly account for tile drains, WEBMOD indicated water from tile drains constituted most of the annual streamflow in the Indiana watershed. The Nebraska models indicated annual streamflow was composed primarily of perennial groundwater flow and infiltration-excess runoff, which conformed to the conceptual hydrology developed for that watershed. The hydrologic processes represented in the parameter sets resulting from each model were comparable at individual watersheds, but varied between watersheds. The models were unable to show, however, whether hydrologic processes other than those included in the original conceptual models were major contributors to streamflow. Supplemental simulations of agricultural chemical transport could improve the ability to assess conceptual models.

Comparative Evaluation of Immediate Post-Operative Sequelae after Surgical Removal of Impacted Mandibular Third Molar with or without Tube Drain - Split-Mouth Study

PubMed Central

Bhate, Kalyani; Dolas, RS; Kumar, SN Santhosh; Waknis, Pushkar

2016-01-01

Introduction Third molar surgery is one of the most common surgical procedures performed in general dentistry. Post-operative variables such as pain, swelling and trismus are major concerns after impacted mandibular third molar surgery. Use of passive tube drain is supposed to help reduce these immediate post-operative sequelae. The current study was designed to compare the effect of tube drain on immediate post-operative sequelae following impacted mandibular third molar surgery. Aim To compare the post-operative sequelae after surgical removal of impacted mandibular third molar surgery with or without tube drain. Materials and Methods Thirty patients with bilateral impacted mandibular third molars were divided into two groups: Test (with tube drain) and control (without tube drain) group. In the test group, a tube drain was inserted through the releasing incision, and kept in place for three days. The control group was left without a tube drain. The post-operative variables like, pain, swelling, and trismus were calculated after 24 hours, 72 hours, 7 days, and 15 days in both the groups and analyzed statistically using chi-square and t-test analysis. Results The test group showed lesser swelling as compared to control group, with the swelling variable showing statistically significant difference at post-operative day 3 and 7 (p≤ 0.05) in both groups. There were no statistically significant differences in pain and trismus variables in both the groups. Conclusion The use of tube drain helps to control swelling following impacted mandibular third molar surgery. However, it does not have much effect on pain or trismus. PMID:28209003

Nitrous oxide emissions in the Shanghai river network: implications for the effects of urban sewage and IPCC methodology.

PubMed

Yu, Zhongjie; Deng, Huanguang; Wang, Dongqi; Ye, Mingwu; Tan, Yongjie; Li, Yangjie; Chen, Zhenlou; Xu, Shiyuan

2013-10-01

Global nitrogen (N) enrichment has resulted in increased nitrous oxide (N(2)O) emission that greatly contributes to climate change and stratospheric ozone destruction, but little is known about the N(2)O emissions from urban river networks receiving anthropogenic N inputs. We examined N(2)O saturation and emission in the Shanghai city river network, covering 6300 km(2), over 27 months. The overall mean saturation and emission from 87 locations was 770% and 1.91 mg N(2)O-N m(-2) d(-1), respectively. Nitrous oxide (N(2)O) saturation did not exhibit a clear seasonality, but the temporal pattern was co-regulated by both water temperature and N loadings. Rivers draining through urban and suburban areas receiving more sewage N inputs had higher N(2)O saturation and emission than those in rural areas. Regression analysis indicated that water ammonium (NH(4)(+)) and dissolved oxygen (DO) level had great control on N(2)O production and were better predictors of N(2)O emission in urban watershed. About 0.29 Gg N(2)O-N yr(-1) N(2)O was emitted from the Shanghai river network annually, which was about 131% of IPCC's prediction using default emission values. Given the rapid progress of global urbanization, more study efforts, particularly on nitrification and its N(2)O yielding, are needed to better quantify the role of urban rivers in global riverine N(2)O emission. © 2013 John Wiley & Sons Ltd.

Grain scale observations of stick-slip dynamics in fluid saturated granular fault gouge

NASA Astrophysics Data System (ADS)

Johnson, P. A.; Dorostkar, O.; Guyer, R. A.; Marone, C.; Carmeliet, J.

2017-12-01

We are studying granular mechanics during slip. In the present work, we conduct coupled computational fluid dynamics (CFD) and discrete element method (DEM) simulations to study grain scale characteristics of slip instabilities in fluid saturated granular fault gouge. The granular sample is confined with constant normal load (10 MPa), and sheared with constant velocity (0.6 mm/s). This loading configuration is chosen to promote stick-slip dynamics, based on a phase-space study. Fluid is introduced in the beginning of stick phase and characteristics of slip events i.e. macroscopic friction coefficient, kinetic energy and layer thickness are monitored. At the grain scale, we monitor particle coordination number, fluid-particle interaction forces as well as particle and fluid kinetic energy. Our observations show that presence of fluids in a drained granular fault gouge stabilizes the layer in the stick phase and increases the recurrence time. In saturated model, we observe that average particle coordination number reaches higher values compared to dry granular gouge. Upon slip, we observe that a larger portion of the granular sample is mobilized in saturated gouge compared to dry system. We also observe that regions with high particle kinetic energy are correlated with zones of high fluid motion. Our observations highlight that spatiotemporal profile of fluid dynamic pressure affects the characteristics of slip instabilities, increasing macroscopic friction coefficient drop, kinetic energy release and granular layer compaction. We show that numerical simulations help characterize the micromechanics of fault mechanics.

Estimation of CO2 saturation during both CO2 drainage and imbibition processes based on both seismic velocity and electrical resistivity measurements

NASA Astrophysics Data System (ADS)

Kim, Jongwook; Nam, Myung Jin; Matsuoka, Toshifumi

2013-10-01

In order to monitor injected carbon dioxide (CO2), simultaneous measurements of seismic velocity and electrical resistivity are employed during the drainage (CO2 injection) and imbibition (water injection) processes of a Berea sandstone. Supercritical CO2 (10 MPa at 40 ºC) was injected into a water-saturated Berea sandstone in the drainage stage and monitored via simultaneous measurements. After the injection of supercritical CO2, fresh distilled water was injected into the CO2-injected sandstone during the imbibition stage. Electrical resistivity and P-wave velocity measurements acquired during the drainage and imbibition stages were employed to evaluate CO2 saturations (SCO2) based on the resistivity index and the Gassmann fluid-substitution equations, respectively. Comparing estimated values for SCO2 saturation against those from volume-derived SCO2, based on analysis on injected and drained fluid volumes in the drainage process, we conclude that Gassmann-Brie and resistivity index are suitable for the evaluation based on P-wave velocity and electrical resistivity, respectively. Rt-based estimation properly tracks the variation in SCO2 even when SCO2 is large (>0.15), while Vp-based estimation is sensitive to the variation in SCO2 when SCO2 is small (<0.1). Employing the Gassmann-Brie and resistivity index, estimation of variation in SCO2 based on the simultaneous measurements provides the upper and lower bounds of SCO2 even when SCO2 is large (>0.1), while properly estimating SCO2 when SCO2 is small (<0.1). Monitoring the CO2 imbibition process confirms residual CO2 saturation within the sample.

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

NASA Astrophysics Data System (ADS)

Myodo, Miho; Inaba, Masafumi; Ohara, Kazuyoshi; Kato, Ryogo; Kobayashi, Mikinori; Hirano, Yu; Suzuki, Kazuma; Kawarada, Hiroshi

2015-05-01

Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.

Back bias induced dynamic and steep subthreshold swing in junctionless transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parihar, Mukta Singh; Kranti, Abhinav, E-mail: akranti@iiti.ac.in

In this work, we analyze back bias induced steep and dynamic subthreshold swing in junctionless double gate transistors operated in the asymmetric mode. This impact ionization induced dynamic subthreshold swing is explained in terms of the ratio between minimum hole concentration and peak electron concentration, and the dynamic change in the location of the conduction channel with applied front gate voltage. The reason for the occurrence of impact ionization at sub-bandgap drain voltages in silicon junctionless transistors is also accounted for. The optimum junctionless transistor operating at a back gate bias of −0.9 V, achieves over 5 orders of change inmore » drain current at a gate overdrive of 200 mV and drain bias of 1 V. These results for junctionless transistors are significantly better than those exhibited by silicon tunnel field effect transistors operating at the same drain bias.« less

Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

NASA Astrophysics Data System (ADS)

Lee, Sol Kyu; Seok, Ki Hwan; Chae, Hee Jae; Lee, Yong Hee; Han, Ji Su; Jo, Hyeon Ah; Joo, Seung Ki

2017-03-01

We report a novel method to reduce source and drain (S/D) resistances, and to form a lightly doped layer (LDL) of bottom-gate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). For application in driving TFTs, which operate under high drain voltage condition, poly-Si TFTs are needed in order to attain reliability against hot-carriers as well as high field-effect mobility (μFE). With an additional doping on the p+ Si layer, sheet resistance on S/D was reduced by 37.5% and an LDL was introduced between the channel and drain. These results contributed to not only a lower leakage current and gate-induced drain leakage, but also high immunity of kink-effect and hot-carrier stress. Furthermore, the measured electrical characteristics exhibited a steep subthreshold slope of 190 mV/dec and high μFE of 263 cm2/Vs.

Short-term effects of salinity reduction and drainage on salt-marsh biogeochemical cycling and Spartina (Cordgrass) production

USGS Publications Warehouse

Portnoy, J.W.; Valiela, I.

1997-01-01

To assess the biogeochemical effects of tidal restrictions on salt-marsh sulfur cycling and plant growth, cores of short-form Spartina alterniflora peat were desalinated and kept either waterlogged or drained in greenhouse microcosms. Changes in net Spartina production, and porewater and solid phase chemistry of treated cores were compared to natural conditions in the field collection site over a 21-mo period. Net production among treatments increased significantly in drained and waterlogged peat compared to field conditions during the first growing season. Constantly high sulfide in waterlogged cores accompanied reduced plant growth. Aeration invigorated growth in drained cores but led to oxidization of sulfide minerals and to lowered pH. During the second growing season, growth declined in the drained treatment, probably because of acidification and decreased dissolved inorganic nitrogen. Results are pertinent to the success of current wetland protection and restoration activities in the coastal zone.

Remaining Sites Verification Package for the 100-F-46, 119-F Stack Sampling French Drain, Waste Site Reclassification Form 2008-021

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. M. Capron

2008-08-08

The 100-F-46 french drain consisted of a 1.5 to 3 m long, vertically buried, gravel-filled pipe that was approximately 1 m in diameter. Also included in this waste site was a 5 cm cast-iron pipeline that drained condensate from the 119-F Stack Sampling Building into the 100-F-46 french drain. In accordance with this evaluation, the confirmatory sampling results support a reclassification of this site to No Action. The current site conditions achieve the remedial action objectives and the corresponding remedial action goals established in the Remaining Sites ROD. The results of confirmatory sampling show that residual contaminant concentrations do notmore » preclude any future uses and allow for unrestricted use of shallow zone soils. The results also demonstrate that residual contaminant concentrations are protective of groundwater and the Columbia River.« less

Method of determining interwell oil field fluid saturation distribution

DOEpatents

Donaldson, Erle C.; Sutterfield, F. Dexter

1981-01-01

A method of determining the oil and brine saturation distribution in an oil field by taking electrical current and potential measurements among a plurality of open-hole wells geometrically distributed throughout the oil field. Poisson's equation is utilized to develop fluid saturation distributions from the electrical current and potential measurement. Both signal generating equipment and chemical means are used to develop current flow among the several open-hole wells.

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

2018-04-01

A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach

NASA Astrophysics Data System (ADS)

Arefinia, Zahra; Orouji, Ali A.

2009-02-01

The concept of dual-material gate (DMG) is applied to the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions, and the features exhibited by the resulting new structure, i.e., the DMG-CNTFET structure, have been examined for the first time by developing a two-dimensional (2D) full quantum simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. The results show DMG-CNTFET decreases significantly leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to the single material gate counterparts CNTFET. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate metals. Therefore, this work provides an incentive for further experimental exploration.

Dynamic Dilational Strengthening During Earthquakes in Saturated Gouge-Filled Fault Zones

NASA Astrophysics Data System (ADS)

Sparks, D. W.; Higby, K.

2016-12-01

The effect of fluid pressure in saturated fault zones has been cited as an important factor in the strength and slip-stability of faults. Fluid pressure controls the effective normal stress across the fault and therefore controls the faults strength. In a fault core consisting of granular fault gouge, local transient dilations and compactions occur during slip that dynamically change the fluid pressure. We use a grain-scale numerical model to investigate the effect of these fluid effects in fault gouge during an earthquake. We use a coupled finite difference-discrete element model (Goren et al, 2011), in which the pore space is filled with a fluid. Local changes in grain packing generate local deviations in fluid pressure, which can be relieved by fluid flow through the permeable gouge. Fluid pressure gradients exert drag forces on the grains that couple the grain motion and fluid flow. We simulated 39 granular gouge zones that were slowly loaded in shear stress to near the failure point, and then conducted two different simulations starting from each grain packing: one with a high enough mean permeability (> 10-11 m2) that pressure remains everywhere equilibrated ("fully drained"), and one with a lower permeability ( 10-14 m2) in which flow is not fast enough to prevent significant pressure variations from developing ("undrained"). The static strength of the fault, the size of the event and the evolution of slip velocity are not imposed, but arise naturally from the granular packing. In our particular granular model, all fully drained slip events are well-modeled by a rapid drop in the frictional resistance of the granular packing from a static value to a dynamic value that remains roughly constant during slip. Undrained events show more complex behavior. In some cases, slip occurs via a slow creep with resistance near the static value. When rapid slip events do occur, the dynamic resistance is typically larger than in drained events, and highly variable. Frictional resistance is not correlated with the mean fluid pressure in the layer, but is instead controlled by local regions undergoing dilational strengthening. We find that (in the absence of pressure-generating effects like thermal pressurization or fluid-releasing reactions), the overall effect of fluid is to strengthen the fault.

Phosphorus transport and retention in a channel draining an urban, tropical catchment with informal settlements

NASA Astrophysics Data System (ADS)

Nyenje, P. M.; Meijer, L. M. G.; Foppen, J. W.; Kulabako, R.; Uhlenbrook, S.

2014-03-01

Urban catchments in sub-Saharan Africa (SSA) are increasingly becoming a major source of phosphorus (P) to downstream ecosystems. This is primarily due to large inputs of untreated wastewater to urban drainage channels, especially in informal settlements (or slums). However, the processes governing the fate of P in these catchments are largely unknown. In this study, these processes are investigated. During high runoff events and a period of base flow, we collected hourly water samples (over 24 h) from a primary channel draining a 28 km2 slum-dominated catchment in Kampala, Uganda, and from a tertiary channel draining one of the contributing slum areas (0.54 km2). The samples were analysed for orthophosphate (PO4-P), particulate P (PP), total P (TP), suspended solids (SS) and hydrochemistry. We also collected channel bed and suspended sediments to determine their geo-available metals, sorption characteristics and the dominant phosphorus forms. Our results showed that the catchment exported high fluxes of P (0.3 kg km2 d-1 for PO4-P and 0.95 for TP), which were several orders of magnitude higher than values normally reported in literature. A large proportion of P exported was particulate (56% of TP) and we inferred that most of it was retained along the channel bed. The retained sediment P was predominantly inorganic (> 63% of total sediment P) and consisted of mostly Ca and Fe-bound P, which were present in almost equal proportions. Ca-bound sediment P was attributed to the adsorption of P to calcite because surface water was near saturation with respect to calcite in all the events sampled. Fe-bound sediment P was attributed to the adsorption of P to iron oxides in suspended sediment during runoff events given that surface water was undersaturated with respect to iron phosphates. We also found that the bed sediments were P-saturated and showed a tendency to release P by mineralisation and desorption. During rain events, there was a flushing of PP which we attributed to the resuspension of P-rich bed sediment that accumulated in the channel during low flows. However, first-flush effects were not observed. Our findings provide useful insights into the processes governing the fate and transport of P in urban slum catchments in SSA.

An underlap field-effect transistor for electrical detection of influenza

NASA Astrophysics Data System (ADS)

Lee, Kwang-Won; Choi, Sung-Jin; Ahn, Jae-Hyuk; Moon, Dong-Il; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu

2010-01-01

An underlap channel-embedded field-effect transistor (FET) is proposed for label-free biomolecule detection. Specifically, silica binding protein fused with avian influenza (AI) surface antigen and avian influenza antibody (anti-AI) were designed as a receptor molecule and a target material, respectively. The drain current was significantly decreased after the binding of negatively charged anti-AI on the underlap channel. A set of control experiments supports that only the biomolecules on the underlap channel effectively modulate the drain current. With the merits of a simple fabrication process, complementary metal-oxide-semiconductor compatibility, and enhanced sensitivity, the underlap FET could be a promising candidate for a chip-based biosensor.

Unusual instability mode of transparent all oxide thin film transistor under dynamic bias condition

NASA Astrophysics Data System (ADS)

Oh, Himchan; Hwang, Chi-Sun; Pi, Jae-Eun; Ki Ryu, Min; Ko Park, Sang-Hee; Yong Chu, Hye

2013-09-01

We report a degradation behavior of fully transparent oxide thin film transistor under dynamic bias stress which is the condition similar to actual pixel switching operation in active matrix display. After the stress test, drain current increased while the threshold voltage was almost unchanged. We found that shortening of effective channel length is leading cause of increase in drain current. Electrons activate the neutral donor defects by colliding with them during short gate-on period. These ionized donors are stabilized during the subsequent gate-off period due to electron depletion. This local increase in doping density reduces the channel length.

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

NASA Astrophysics Data System (ADS)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

Current instability and burnout of HEMT structures

NASA Astrophysics Data System (ADS)

Vashchenko, V. A.; Sinkevitch, V. F.

1996-06-01

The burnout mechanism and region of high conductivity formation under breakdown of pseudomorphic GalnAs/GaAlAs and GaAs/GaAlAs HEMT structures have been studied in a pulsed and direct current (d.c.) regime. Peculiarities of the HEMT breakdown have been compared with a GaAs MESFET structure of the same topology. It appears that in all types of investigated structures the drain voltage increase is limited by the transition into a high conductivity state as a result of "parasitic" avalanche-injection conductivity modulation of the undoped GaAs or i-GaAs layer. It has been established that the transition into a high conductivity state is caused by holes from the drain avalanche region in the channel and is the result of a mutual intensification of the avalanche generation rate near the drain and the injection level from the source contact. It turns out that under a typical gate bias operation the transition in the high conductivity state is accompanied by a negative differential conductivity (NDC) and results in the formation of high current density filaments. The resulting high local overheating in the filament region is the cause of local melting and burnout of the HEMT structures.

Broadband pH-Sensing Organic Transistors with Polymeric Sensing Layers Featuring Liquid Crystal Microdomains Encapsulated by Di-Block Copolymer Chains.

PubMed

Seo, Jooyeok; Song, Myeonghun; Jeong, Jaehoon; Nam, Sungho; Heo, Inseok; Park, Soo-Young; Kang, Inn-Kyu; Lee, Joon-Hyung; Kim, Hwajeong; Kim, Youngkyoo

2016-09-14

We report broadband pH-sensing organic field-effect transistors (OFETs) with the polymer-dispersed liquid crystal (PDLC) sensing layers. The PDLC layers are prepared by spin-coating using ethanol solutions containing 4-cyano-4'-pentyl-biphenyl (5CB) and a diblock copolymer (PAA-b-PCBOA) that consists of LC-philic block [poly(4-cyano-biphenyl-4-oxyundecyl acrylate) (PCBOA)] and acrylic acid block [poly(acrylic acid) (PAA)]. The spin-coated sensing layers feature of 5CB microdomains (<5 μm) encapsulated by the PAA-b-PCBOA polymer chains. The resulting LC-integrated-OFETs (PDLC-i-OFETs) can detect precisely and reproducibly a wide range of pH with only small amounts (10-40 μL) of analyte solutions in both static and dynamic perfusion modes. The positive drain current change is measured for acidic solutions (pH < 7), whereas basic solutions (pH > 7) result in the negative change of drain current. The drain current trend in the present PDLC-i-OFET devices is explained by the shrinking-expanding mechanism of the PAA chains in the diblock copolymer layers.

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-12-01

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

High soil solution carbon und nitrogen concentrations in a drained Atlantic bog are reduced to natural levels by 10 yr of rewetting

NASA Astrophysics Data System (ADS)

Frank, S.; Tiemeyer, B.; Gelbrecht, J.; Freibauer, A.

2013-10-01

Artificial drainage of peatlands causes dramatic changes in the release of greenhouse gases and in the export of dissolved carbon (C) and nutrients to downstream ecosystems. Rewetting anthropogenically altered peatlands offers a possibility to reduce nitrogen (N) and C losses. In this study, we investigate the impact of drainage and rewetting on the cycling of dissolved C and N as well as on dissolved gases over a period of 1 yr and 4 month, respectively. The peeper technique was used to receive a high vertical sampling resolution. Within one Atlantic bog complex a near natural site, two drained grasslands sites with different mean water table positions, and a former peat cutting area rewetted 10 yr ago were chosen. Our results clearly indicate that drainage increased the concentration of dissolved organic carbon (DOC), ammonia, nitrate and dissolved organic nitrogen (DON) compared to the near natural site. Drainage depth further determined the release and therefore the concentration level of DOC and N species, but the biochemical cycling and therefore dissolved organic matter (DOM) quality and N species composition were unaffected. Thus, especially deep drainage can cause high DOC losses. In general, DOM at drained sites was enriched in aromatic moieties as indicated by SUVA280 and showed a higher degradation status (lower DOC to DON ratio) compared to the near natural site. At the drained sites, equal C to N ratios of uppermost peat layer and DOC to DON ratio of DOM in soil solution suggest that the uppermost degraded peat layer is the main source of DOM. Nearly constant DOC to DON ratios and SUVA280 values with depth furthermore indicated that DOM moving downwards through the drained sites remained largely unchanged. DON and ammonia contributed most to the total dissolved nitrogen (TN). The subsoil concentrations of nitrate were negligible due to strong decline in nitrate around mean water table depth. Methane production during the winter months at the drained sites moved downwards to areas which were mostly water saturated over the whole year (>40 cm). Above these depths, the recovery of the water table in winter months led to the production of nitrous oxide around mean water table depth at drained sites. 10 yr after rewetting, the DOM quality (DOC to DON ratio and SUVA280) and quantity were comparable to the near natural site, indicating the re-establishment of mostly pristine biochemical processes under continuously water logged conditions. The only differences occur in elevated dissolved methane and ammonia concentrations reflecting the former disturbance by drainage and peat extraction. Rewetting via polder technique seems to be an appropriate way to revitalize peatlands on longer timescales and to improve the water quality of downstream water bodies.

Effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ganesh, K. C. P.; Nagesha, Y. N.; Umakanth, D.; Arora, S. K.; Siddappa, K.

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (V-TH), the voltage shift due to interface trapped charge (DeltaV(Nit)), the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot) ) and the drain saturation current (I-D Sat) were studied as a function of fluence. Considerable increase in DeltaN(it) and DeltaN(ot) , and decrease in V-TH and I-D Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 degreesC.

Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors.

PubMed

Morkötter, S; Jeon, N; Rudolph, D; Loitsch, B; Spirkoska, D; Hoffmann, E; Döblinger, M; Matich, S; Finley, J J; Lauhon, L J; Abstreiter, G; Koblmüller, G

2015-05-13

Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 10(3) cm(2) V(-1) s(-1). The spatial separation between the high-mobility free electron gas at the NW core-shell interface and the Si dopants in the shell is directly verified by atom probe tomographic (APT) analysis, band-profile calculations, and transport characterization in advanced field-effect transistor (FET) geometries, demonstrating powerful control over the free electron gas density and conductivity. Multigated NW-FETs allow us to spatially resolve channel width- and crystal phase-dependent variations in electron gas density and mobility along single NW-FETs. Notably, dc output and transfer characteristics of these n-type depletion mode NW-FETs reveal excellent drain current saturation and record low subthreshold slopes of 70 mV/dec at on/off ratios >10(4)-10(5) at room temperature.

Seismic evidence for the erosion of subglacial sediments by rapidly draining supraglacial lakes on the West Greenland Ice Sheet

NASA Astrophysics Data System (ADS)

Kulessa, Bernd; Booth, Adam; Hubbard, Alun; Dow, Christine; Doyle, Samuel; Clark, Roger; Gusmeroli, Alessio; Lindbäck, Katrin; Pettersson, Rickard; Jones, Glenn; Murray, Tavi

2013-04-01

As part of a multi-disciplinary, multi-national project investigating the ice-dynamic implications of rapidly draining supraglacial lakes on the West Greenland Ice Sheet, we have conducted a series of seismic reflection experiments immediately following the rapid drainage of Lake F in the land-terminating Russell Glacier catchment to [1] isolate the principal mode of basal motion, and [2] identify and characterise the modification of that mode as forced by ingress of surface-derived meltwaters. Lake F had a surface area of ~3.84 km2 and drained entirely in less than two hours at a maximum rate of ~ 3300 m3 s-1, marked by local ice extension and uplift of up to 1 m. Two seismic profiles (A and B) were acquired and optimised for amplitude versus angle (AVA) characterisation of the substrate. All seismic data were recorded with a Geometrics GEODE system, using 48 vertically-orientated 100-Hz geophones installed at 10 m intervals. 250 g pentalite charges were fired in shallow auger holes at 80 m intervals along each line, providing six-fold coverage. Profile A targets the subglacial hydrological basin into which the Lake-F waters drained, and reveals a uniform, flat glacier bed beneath ~1.3 km of ice, characterised by the presence of a very stiff till with an acoustic impedance of 4.17 ± 0.11 x 106 kg m-2 s1 and a Poisson's ratio of 0.06 ± 0.05. In profile B, to the southeast of Lake F in an isolated subglacial hydrological basin, ice thickness is 1.0-1.1 km and a discrete sedimentary basin is evident; within this feature, we interpret a stratified subglacial till deposit, having lodged till (acoustic impedance = 4.26 ± 0.59×106 kgm-2 s-1) underlying a water-saturated dilatant till layer (thickness

Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun

The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.

Vertical architecture for enhancement mode power transistors based on GaN nanowires

NASA Astrophysics Data System (ADS)

Yu, F.; Rümmler, D.; Hartmann, J.; Caccamo, L.; Schimpke, T.; Strassburg, M.; Gad, A. E.; Bakin, A.; Wehmann, H.-H.; Witzigmann, B.; Wasisto, H. S.; Waag, A.

2016-05-01

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

Comparison of Chest Pain Protocols for Electrocardiography-Gated Dual-Source Cardiothoracic CT in Children and Adults: The Effect of Tube Current Saturation on Radiation Dose Reduction

PubMed Central

2018-01-01

Objective To compare radiation doses between conventional and chest pain protocols using dual-source retrospectively electrocardiography (ECG)-gated cardiothoracic computed tomography (CT) in children and adults and assess the effect of tube current saturation on radiation dose reduction. Materials and Methods This study included 104 patients (16.6 ± 7.7 years, range 5–48 years) that were divided into two groups: those with and those without tube current saturation. The estimated radiation doses of retrospectively ECG-gated spiral cardiothoracic CT were compared between conventional, uniphasic, and biphasic chest pain protocols acquired with the same imaging parameters in the same patients by using paired t tests. Dose reduction percentages, patient ages, volume CT dose index values, and tube current time products per rotation were compared between the two groups by using unpaired t tests. A p value < 0.05 was considered significant. Results The volume CT dose index values of the biphasic chest pain protocol (10.8 ± 3.9 mGy) were significantly lower than those of the conventional protocol (12.2 ± 4.7 mGy, p < 0.001) and those of the uniphasic chest pain protocol (12.9 ± 4.9 mGy, p < 0.001). The dose-saving effect of biphasic chest pain protocol was significantly less with a saturated tube current (4.5 ± 10.2%) than with unsaturated tube current method (14.8 ± 11.5%, p < 0.001). In 76 patients using 100 kVp, patient age showed no significant differences between the groups with and without tube current saturation in all protocols (p > 0.05); the groups with tube current saturation showed significantly higher volume CT dose index values (p < 0.01) and tube current time product per rotation (p < 0.001) than the groups without tube current saturation in all protocols. Conclusion The radiation dose of dual-source retrospectively ECG-gated spiral cardiothoracic CT can be reduced by approximately 15% by using the biphasic chest pain protocol instead of the conventional protocol in children and adults if radiation dose parameters are further optimized to avoid tube current saturation. PMID:29353996

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Zhu, Hui; Meng, Xiao; Zheng, Xiang; Yang, Ying; Feng, Shiwei; Zhang, Yamin; Guo, Chunsheng

2018-07-01

We studied how substrate thinning affected the electronic transport characteristics of AlGaN/GaN HEMTs. By thinning their sapphire substrate from 460 μm to 80 μm, we varied the residual stress in these HEMTs. The thinned sample showed decreased drain-source current and occurrence of kink effect. Furthermore, shown by current transient measurements and time constant analysis, the detrapping behaviors of trap states shifted toward a larger time constant, and the detrapping behavior under the gate and in the gate-drain access region showed increased amplitude. By using pulsed current-voltage measurements, the thinned sample showed a positive shift of the threshold voltage, a decrease in peak transconductance, and an aggravation in current collapse, as compared with the thick one. The degradation of electrical behavior were associated with the structural degradation, as confirmed by the increase of pit density on the thinned sample surface.

Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

NASA Technical Reports Server (NTRS)

Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

2007-01-01

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Phosphorus and greenhouse gas dynamics in a drained calcareous wetland soil in Minnesota.

PubMed

Berryman, Erin M; Venterea, Rodney T; Baker, John M; Bloom, Paul R; Elf, Brandy

2009-01-01

Restoration of wetland hydrology can produce ecological benefits but may have unintended consequences. We examined effects of altered water level on release of dissolved reactive phosphorus (DRP) and greenhouse gases (GHG) in soil cores from a marsh being evaluated for restoration. We also measured field concentrations of DRP and other constituents in wetland porewater. Intact cores from a sampling location with higher Fe and lower calcium carbonate (CaCO(3)) contents released more DRP than another location, and displayed higher DRP under completely saturated compared to partly drained conditions. Porewater samples collected from the high-Fe location also contained higher DRP levels. Chemical data suggest that redox-driven reactions largely controlled DRP levels at the high-Fe site, while CaCO(3) adsorption was more important at the low-Fe site. Over the long term, water table elevation may attenuate P draining from the wetland due to decreased mineralization. However, such measures may increase P release in the short term. Raising the water level in soil cores resulted in decreased nitrous oxide (N(2)O) emissions, increased methane (CH(4)) emissions, and an overall increase in total global warming potential (GWP). The proportion of total GWP contributed by N(2)O decreased from 14% to < or = 1% as water level was raised, while the proportion contributed by CH(4) increased from 10 to 20% to 60 to 80%. Restoration of hydrology in the Rice Lake wetland has the potential to affect both local water quality and global air quality. These combined effects complicate the cost-to-benefit analysis of such wetland restoration efforts.

Accuracy of surgical wound drainage measurements: an analysis and comparison.

PubMed

Yue, Brian; Nizzero, Danielle; Zhang, Chunxiao; van Zyl, Natasha; Ting, Jeannette

2015-05-01

Surgical drain tube readings can influence the clinical management of the post-operative patient. The accuracy of these readings has not been documented in the current literature and this experimental study aims to address this paucity. Aliquots (10, 25, 40 and 90 mL) of black tea solution prepared to mimic haemoserous fluid were injected into UnoVac, RedoVac and Jackson-Pratt drain tubes. Nursing and medical staff from a tertiary hospital were asked to estimate drain volumes by direct observation; analysis of variance was performed on the results and significance level was set at 0.05. Doctors and nurses are equally accurate in estimating drain tube volumes. Jackson-Pratt systems were found to be the most accurate for intermediate volumes of 25 and 40 mL. For extreme of volumes (both high and low), all drainage systems were inaccurate. This study suggests that for intermediate volumes (25 and 40 mL), Jackson-Pratt is the drainage system of choice. The accuracy of volume measurement is diminished at the extremes of drain volumes; emptying of drainage systems is recommended to avoid overfilling of drainage systems. © 2014 Royal Australasian College of Surgeons.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE PAGES

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; ...

2017-10-23

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Equivalent input spectrum and drain current spectrum for 1/ƒ noise in short channel MOS transistors

NASA Astrophysics Data System (ADS)

Gentil, P.; Mounib, A.

1981-05-01

Flicker noise in MOS transistors can be evaluated by measuring the spectrum SID of the drain current fluctuation or the spectrum Sve of an equivalent gate fluctuation. We show here that experimental variations of {S I D}/{Sve} are in good agreement with gm2 by considering a model of the transconductance gm which takes into account the variations of the channel carriers mobility with the surface electric field. The model agrees with the experimental results obtained on short channel MOS transistors which exhibit large variations of mobility with the gate voltage. The validity of physical interpretations of noise data on MOS transistors is examined.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Integrated MOSFET-Embedded-Cantilever-Based Biosensor Characteristic for Detection of Anthrax Simulant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mostafa, Salwa; Lee, Ida; Islam, Syed K

2011-01-01

In this work, MOSFET-embedded cantilevers are configured as microbial sensors for detection of anthrax simulants, Bacillus thuringiensis. Anthrax simulants attached to the chemically treated gold-coated cantilever cause changes in the MOSFET drain current due to the bending of the cantilever which indicates the detection of anthrax simulant. Electrical properties of the anthrax simulant are also responsible for the change in the drain current. The test results suggest a detection range of 10 L of stimulant test solution (a suspension population of 1.3 107 colony-forming units/mL diluted in 40% ethanol and 60% deionized water) with a linear response of 31 A/more » L.« less

Influence of Scattering on Ballistic Nanotransistor Design

NASA Technical Reports Server (NTRS)

Anantram, M. P.; Svizhenko, Alexei; Biegel, Bryan, A. (Technical Monitor)

2002-01-01

Importance of this work: (1) This is the first work to model electron-phonon scattering within a quantum mechanical approach to nanotransistors. The simulations use the non equilibrium Green's function method. (2) A simple equation which captures the importance of scattering as a function of the spatial location from source to drain is presented. This equation helps interpret the numerical simulations. (3) We show that the resistance per unit length in the source side is much larger than in the drain side. Thus making scattering in the source side of the device much more important than scattering in the drain side. Numerical estimates of ballisticity for 10nm channel length devices in the presence of of electron-phonon scattering are given. Based on these calculations, we propose that to achieve a larger on-current in nanotransistors, it is crucial to keep the highly doped source extension region extremely small, even if this is at the cost of making the highly doped drain extension region longer.

Regenerative switching CMOS system

DOEpatents

Welch, James D.

1998-01-01

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

Regenerative switching CMOS system

DOEpatents

Welch, J.D.

1998-06-02

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

EVALUATION OF FABRIC MEMBRANES FOR USE IN SALTSTONE DRAIN WATER SYSTEM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pickenheim, B.; Miller, D.; Burket, P.

2012-03-08

Saltstone Disposal Unit 2 contains a sheet drain fabric intended to separate solids from drain water to be returned to the Salt Feed Tank. A similar system installed in Vault 4 appears to be ineffective in keeping solids out of the drain water return lines. Waste Solidification Engineering is considering installation of an additional fabric membrane to supplement the existing sheet drain in SDU 2. Amerdrain 200 is the product currently installed in SDU 2. This product is no longer available, so Sitedrain 94 was used as the replacement product in this testing. Fabrics with apparent opening sizes of 10,more » 25, 50 and 100 microns were evaluated. These fabrics were evaluated under three separate test conditions, a water flow test, a solids retention test and a grout pour test. A flow test with water showed that installation of an additional filter layer will predictably reduce the theoretical flux through the sheet drain. The manufacturer reports the flux for Sitedrain 94 as 150 gpm/ft{sup 2} by ASTM D-4491. This compares reasonably well with the 117 gpm/ft{sup 2} obtained in this testing. A combination of the 10 micron fabric with Sitedrain 94 could be expected to decrease flux by about 10 times as compared to Sitedrain 94 alone. The different media were used to filter a slag and fly ash mixture from water. Slag historically has the smallest nominal particle size of the premix components. Cement was omitted from the test because of its reactivity with water would prohibit accurately particle size measurements of the filtered samples. All four media sizes were able to remove greater than 95% of particles larger than 100 microns from the slurry. The smaller opening sizes were increasingly effective in removing more particles. The 10 micron filter captured 15% of the total amount of solids used in the test. This result implies that some insoluble particles may still be able to enter the drain water collection system, although the overall solids rejection is significantly improved over the current design. Test boxes were filled with grout to evaluate the performance of the sheet drain and fabrics in a simulated vault environment. All of the tests produced a similar amount of drain water, between 8-11% of the amount of water in the mix, which is expected with the targeted formulation. All of the collected drain waters contained some amount of solids, although the 10 micron filter did not appear to allow any premix materials to pass through. The solids collected from this box are believed to consist of calcium carbonate based on one ICP-AES measurement. Any of the four candidate fabrics would be an improvement over the sheet drain alone relative to solids removal. The 10 micron fabric is the only candidate that stopped all premix material from passing. The 10 micron fabric will also cause the largest decrease in flux. This decrease in flux was not enough to inhibit the total amount of drain water removed, but may lead to increased time to remove standing water prior to subsequent pours in the facility. The acceptability of reduced liquid flux through the 10 micron fabric will depend on the amount of excess water to be removed, the time available for water removal and the total area of fabric installed at the disposal cell.« less

Power flow control using distributed saturable reactors

DOEpatents

Dimitrovski, Aleksandar D.

2016-02-13

A magnetic amplifier includes a saturable core having a plurality of legs. Control windings wound around separate legs are spaced apart from each other and connected in series in an anti-symmetric relation. The control windings are configured in such a way that a biasing magnetic flux arising from a control current flowing through one of the plurality of control windings is substantially equal to the biasing magnetic flux flowing into a second of the plurality of control windings. The flow of the control current through each of the plurality of control windings changes the reactance of the saturable core reactor by driving those portions of the saturable core that convey the biasing magnetic flux in the saturable core into saturation. The phasing of the control winding limits a voltage induced in the plurality of control windings caused by a magnetic flux passing around a portion of the saturable core.

Influence of infrastructure on water quality and greenhouse gas dynamics in urban streams

NASA Astrophysics Data System (ADS)

Smith, Rose M.; Kaushal, Sujay S.; Beaulieu, Jake J.; Pennino, Michael J.; Welty, Claire

2017-06-01

Streams and rivers are significant sources of nitrous oxide (N2O), carbon dioxide (CO2), and methane (CH4) globally, and watershed management can alter greenhouse gas (GHG) emissions from streams. We hypothesized that urban infrastructure significantly alters downstream water quality and contributes to variability in GHG saturation and emissions. We measured gas saturation and estimated emission rates in headwaters of two urban stream networks (Red Run and Dead Run) of the Baltimore Ecosystem Study Long-Term Ecological Research project. We identified four combinations of stormwater and sanitary infrastructure present in these watersheds, including: (1) stream burial, (2) inline stormwater wetlands, (3) riparian/floodplain preservation, and (4) septic systems. We selected two first-order catchments in each of these categories and measured GHG concentrations, emissions, and dissolved inorganic and organic carbon (DIC and DOC) and nutrient concentrations biweekly for 1 year. From a water quality perspective, the DOC : NO3- ratio of streamwater was significantly different across infrastructure categories. Multiple linear regressions including DOC : NO3- and other variables (dissolved oxygen, DO; total dissolved nitrogen, TDN; and temperature) explained much of the statistical variation in nitrous oxide (N2O, r2 = 0.78), carbon dioxide (CO2, r2 = 0.78), and methane (CH4, r2 = 0.50) saturation in stream water. We measured N2O saturation ratios, which were among the highest reported in the literature for streams, ranging from 1.1 to 47 across all sites and dates. N2O saturation ratios were highest in streams draining watersheds with septic systems and strongly correlated with TDN. The CO2 saturation ratio was highly correlated with the N2O saturation ratio across all sites and dates, and the CO2 saturation ratio ranged from 1.1 to 73. CH4 was always supersaturated, with saturation ratios ranging from 3.0 to 2157. Longitudinal surveys extending form headwaters to third-order outlets of Red Run and Dead Run took place in spring and fall. Linear regressions of these data yielded significant negative relationships between each gas with increasing watershed size as well as consistent relationships between solutes (TDN or DOC, and DOC : TDN ratio) and gas saturation. Despite a decline in gas saturation between the headwaters and stream outlet, streams remained saturated with GHGs throughout the drainage network, suggesting that urban streams are continuous sources of CO2, CH4, and N2O. Our results suggest that infrastructure decisions can have significant effects on downstream water quality and greenhouse gases, and watershed management strategies may need to consider coupled impacts on urban water and air quality.

Assessing the fate of explosives derived nitrate in mine waste rock dumps using the stable isotopes of oxygen and nitrogen.

PubMed

Hendry, M Jim; Wassenaar, Leonard I; Barbour, S Lee; Schabert, Marcie S; Birkham, Tyler K; Fedec, Tony; Schmeling, Erin E

2018-05-29

Ammonium nitrate (NH 4 NO 3 ) mixed with fuel oil is a common blasting agent used to fragment rock into workable size fractions at mines throughout the world. The decomposition and oxidation of undetonated explosives can result in high NO 3 - concentrations in waters emanating from waste rock dumps. We used the stable isotopic composition of NO 3 - (δ 15 N- and δ 18 O-NO 3 - ) to define and quantify the controls on NO 3 - composition in waste rock dumps by studying water-unsaturated and saturated conditions at nine coal waste rock dumps located in the Elk Valley, British Columbia, Canada. Estimates of the extent of nitrification of NH 4 NO 3 in oxic zones in the dumps, initial NO 3 - concentrations prior to denitrification, and the extent of NO 3 - removal by denitrification in sub-oxic to anoxic zones are provided. δ 15 N data from unsaturated waste rock dumps confirm NO 3 - is derived from blasting. δ 15 N- and δ 18 O-NO 3 - data show extensive denitrification can occur in saturated waste rock and in localized zones of elevated water saturation and low oxygen concentrations in unsaturated waste rock. At the mine dump scale, the extent of denitrification in the unsaturated waste rock was inferred from water samples collected from underlying rock drains. Copyright © 2018. Published by Elsevier B.V.

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

Integrated, Continuous Emulsion Creamer.

PubMed

Cochrane, Wesley G; Hackler, Amber L; Cavett, Valerie J; Price, Alexander K; Paegel, Brian M

2017-12-19

Automated and reproducible sample handling is a key requirement for high-throughput compound screening and currently demands heavy reliance on expensive robotics in screening centers. Integrated droplet microfluidic screening processors are poised to replace robotic automation by miniaturizing biochemical reactions to the droplet scale. These processors must generate, incubate, and sort droplets for continuous droplet screening, passively handling millions of droplets with complete uniformity, especially during the key step of sample incubation. Here, we disclose an integrated microfluidic emulsion creamer that packs ("creams") assay droplets by draining away excess oil through microfabricated drain channels. The drained oil coflows with creamed emulsion and then reintroduces the oil to disperse the droplets at the circuit terminus for analysis. Creamed emulsion assay incubation time dispersion was 1.7%, 3-fold less than other reported incubators. The integrated, continuous emulsion creamer (ICEcreamer) was used to miniaturize and optimize measurements of various enzymatic activities (phosphodiesterase, kinase, bacterial translation) under multiple- and single-turnover conditions. Combining the ICEcreamer with current integrated microfluidic DNA-encoded library bead processors eliminates potentially cumbersome instrumentation engineering challenges and is compatible with assays of diverse target class activities commonly investigated in drug discovery.

Fabrication and Characteristics of Pentacene/Vanadium Pentoxide Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minagawa, M.; Nakai, K.; Baba, A.

2011-12-23

Organic field-effect transistors (OFETs) were fabricated using pentacene thin layer, and the effects of inserted Lewis-acid thin layers on electrical properties were investigated. The OFETs have active layers of pentacene and vanadium pentoxide (V{sub 2}O{sub 5}) as a Lewis-acid layer. Typical source-drain current (I{sub DS}) vs. source-drain voltage (V{sub DS}) curves were observed under negative gate voltages (V{sub G}S) application, and the shift of the threshold voltage for FET driving (V{sub t}) to positive side was also observed by V{sub 2}O{sub 5} layer insertion, that is, -2.5 V for device with V{sub 2}O{sub 5} layer and -5.7 V for devicemore » without V{sub 2}O{sub 5} layer. It was thought that charge transfer (CT) complexes which were formed at the interface between pentacene and V{sub 2}O{sub 5} layer were dissociated by the applied gate voltage, and the generated holes seem to contribute to drain current and the apparent V{sub t} improvement.« less

Managing Artificially Drained Low-Gradient Agricultural Headwaters for Enhanced Ecosystem Functions

PubMed Central

Pierce, Samuel C.; Kröger, Robert; Pezeshki, Reza

2012-01-01

Large tracts of lowlands have been drained to expand extensive agriculture into areas that were historically categorized as wasteland. This expansion in agriculture necessarily coincided with changes in ecosystem structure, biodiversity, and nutrient cycling. These changes have impacted not only the landscapes in which they occurred, but also larger water bodies receiving runoff from drained land. New approaches must append current efforts toward land conservation and restoration, as the continuing impacts to receiving waters is an issue of major environmental concern. One of these approaches is agricultural drainage management. This article reviews how this approach differs from traditional conservation efforts, the specific practices of drainage management and the current state of knowledge on the ecology of drainage ditches. A bottom-up approach is utilized, examining the effects of stochastic hydrology and anthropogenic disturbance on primary production and diversity of primary producers, with special regard given to how management can affect establishment of macrophytes and how macrophytes in agricultural landscapes alter their environment in ways that can serve to mitigate non-point source pollution and promote biodiversity in receiving waters. PMID:24832519

Influence of helical external driven current on nonlinear resistive tearing mode evolution and saturation in tokamaks

NASA Astrophysics Data System (ADS)

Zhang, W.; Wang, S.; Ma, Z. W.

2017-06-01

The influences of helical driven currents on nonlinear resistive tearing mode evolution and saturation are studied by using a three-dimensional toroidal resistive magnetohydrodynamic code (CLT). We carried out three types of helical driven currents: stationary, time-dependent amplitude, and thickness. It is found that the helical driven current is much more efficient than the Gaussian driven current used in our previous study [S. Wang et al., Phys. Plasmas 23(5), 052503 (2016)]. The stationary helical driven current cannot persistently control tearing mode instabilities. For the time-dependent helical driven current with f c d = 0.01 and δ c d < 0.04 , the island size can be reduced to its saturated level that is about one third of the initial island size. However, if the total driven current increases to about 7% of the total plasma current, tearing mode instabilities will rebound again due to the excitation of the triple tearing mode. For the helical driven current with time dependent strength and thickness, the reduction speed of the radial perturbation component of the magnetic field increases with an increase in the driven current and then saturates at a quite low level. The tearing mode is always controlled even for a large driven current.

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Campabadal, F.

2001-08-01

The hot-carrier degradation of lightly doped drain (LDD) and large angle tilt implanted drain (LATID) nMOSFETs of a 0.35 μm CMOS technology is analysed and compared by means of I-V characterisation and charge pumping current measurements. LATID nMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity at maximum substrate current condition. The different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. Further to this analysis, the hot-carrier degradation comparison between LDD and LATID devices is extended to the whole range of gate-stress regimes and the effects of short electron injection (SEI) and short hole injection (SHI) phases on hot-carrier-stressed devices are analysed. Apart from a significant improved resistance to hot-carrier effects registered for LATID devices, a similar behaviour is observed for the two types of architectures. In this way, SEI phases are found to be an efficient tool for revealing part of the damage generated in stresses at low gate voltages, whereas the performance of a first SHI phase after stress at high gate bias is found to result in a significant additional degradation of the devices. This enhanced degradation is attributed to a sudden interface states build-up occurring in both, LDD and LATID devices, near the Si/spacer interface only under the first hot-hole injection condition.

Environmental Impact Analysis Process. Environmental Impact Statement for the Closure of Pease Air Force Base. Volume 1

DTIC Science & Technology

1990-05-01

initially known as Portsmouth AFB. In 1957, it was rededicated as Pease AFB in honor of Captain Harl Pease, Jr., a native of Plymouth , Now Hampshire. During... barren soil, up-gradient from storm drains, or in close proximity of floor drains. Corrective action currently being taken is the prompt disposal of...Plant communities on base are indicative of the pine / northern hardwood ecosystem.. The forest resources of. Pease AFB are substantial. More than one

Switches from pi- to sigma-bonding complexes controlled by gate voltages.

PubMed

Matsui, Eriko; Harnack, Oliver; Matsuzawa, Nobuyuki N; Yasuda, Akio

2005-10-01

A conjugated polymer/metal ion/liquid-crystal molecular system was set between source and drain electrodes with a 100 nm gap. When gate voltage (Vg) increases, the current between source and drain electrodes increases. Infrared spectra show this system to be composed of pi and sigma complexes. At Vg = 0, the pi complex dominates the sigma complex, whereas the sigma complex becomes dominant when Vg is switched on. Calculations found that the pi complex has lower conductivity than the sigma complex.

Suspended sediment yield of New Jersey coastal plain streams draining into the Delaware estuary

USGS Publications Warehouse

Mansue, Lawrence J.

1972-01-01

The purpose of this report is to summarize sediment data collected at selected stream-sampling sites in southern New Jersey. Computations of excepted average annual yields at each sampling site were made and utilized to estimate the annual yield at ungaged sites. Similar data currently are being compiled for streams draining Pennsylvania and Delaware. It is planned to report on the combined information at a later date in the Geological Survey's Water-Supply Paper series.

Watershed-Scale Cover Crops Reduce Nutrient Export From Agricultural Landscapes.

NASA Astrophysics Data System (ADS)

Tank, J. L.; Hanrahan, B.; Christopher, S. F.; Trentman, M. T.; Royer, T. V.; Prior, K.

2016-12-01

The Midwestern US has undergone extensive land use change as forest, wetlands, and prairies have been converted to agroecosystems. Today, excess fertilizer nutrients from farm fields enter Midwestern agricultural streams, which degrades both local and downstream water quality, resulting in algal blooms and subsequent hypoxic "dead zones" far from the nutrient source. We are quantifying the benefits of watershed-scale conservation practices that may reduce nutrient runoff from adjacent farm fields. Specifically, research is lacking on whether the planting of winter cover crops in watersheds currently dominated by row-crop agriculture can significantly reduce nutrient inputs to adjacent streams. Since 2013, farmers have planted cover crops on 70% of croppable acres in the Shatto Ditch Watershed (IN), and "saturation level" implementation of this conservation practice has been sustained for 3 years. Every 14 days, we have quantified nutrient loss from fields by sampling nutrient fluxes from multiple subsurface tile drains and longitudinally along the stream channel throughout the watershed. Cover crops improved stream water quality by reducing dissolved inorganic nutrients exported downstream; nitrate-N and DRP concentrations and fluxes were significantly lower in tiles draining fields with cover crops compared to those without. Annual watershed nutrient export also decreased, and reductions in N and P loss ( 30-40%) exceeded what we expected based on only a 6-10% reduction in runoff due to increased watershed water holding capacity. We are also exploring the processes responsible for increased nutrient retention, where they are occurring (terrestrial vs. aquatic) and when (baseflow vs. storms). For example, whole-stream metabolism also responded to cover crop planting, showing reduced variation in primary production and respiration in years after watershed-scale planting of cover crops. In summary, widespread land cover change, through cover crop planting, can significantly reduce annual watershed-scale nutrient export. Moreover, successful outcomes highlighted through demonstration projects may facilitate widespread adoption, making them powerful agents of change for advancing conservation success.

Geophysical Investigations at Hidden Dam, Raymond, California Flow Simulations

USGS Publications Warehouse

Minsley, Burke J.; Ikard, Scott

2010-01-01

Numerical flow modeling and analysis of observation-well data at Hidden Dam are carried out to supplement recent geophysical field investigations at the site (Minsley and others, 2010). This work also is complementary to earlier seepage-related studies at Hidden Dam documented by Cedergren (1980a, b). Known seepage areas on the northwest right abutment area of the downstream side of the dam was documented by Cedergren (1980a, b). Subsequent to the 1980 seepage study, a drainage blanket with a sub-drain system was installed to mitigate downstream seepage. Flow net analysis provided by Cedergren (1980a, b) suggests that the primary seepage mechanism involves flow through the dam foundation due to normal reservoir pool elevations, which results in upflow that intersects the ground surface in several areas on the downstream side of the dam. In addition to the reservoir pool elevations and downstream surface topography, flow is also controlled by the existing foundation geology as well as the presence or absence of a horizontal drain in the downstream portion of the dam. The current modeling study is aimed at quantifying how variability in dam and foundation hydrologic properties influences seepage as a function of reservoir stage. Flow modeling is implemented using the COMSOL Multiphysics software package, which solves the partially saturated flow equations in a two-dimensional (2D) cross-section of Hidden Dam that also incorporates true downstream topography. Use of the COMSOL software package provides a more quantitative approach than the flow net analysis by Cedergren (1980a, b), and allows for rapid evaluation of the influence of various parameters such as reservoir level, dam structure and geometry, and hydrogeologic properties of the dam and foundation materials. Historical observation-well data are used to help validate the flow simulations by comparing observed and predicted water levels for a range of reservoir elevations. The flow models are guided by, and discussed in the context of, the geophysical work (Minsley and others, 2010) where appropriate.

High work function materials for source/drain contacts in printed polymer thin film transistors

NASA Astrophysics Data System (ADS)

Sholin, V.; Carter, S. A.; Street, R. A.; Arias, A. C.

2008-02-01

Studies of materials for source-drain electrodes in ink-jet printed polymer-based thin film transistors (TFTs) are reported. Two systems are studied: a blend of Ag nanoparticles with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) and an ethylene glycol-doped PEDOT:PSS solution (modified-PEDOT). The semiconductor used is the polythiophene derivative poly [5,5'-bis(3-dodecyl-2-thienyl)-2,2,2'-bithiophene]. PEDOT:Ag blends and modified-PEDOT yield TFTs with mobilities around 10-2 and 10-3cm2/Vs, respectively, subthreshold slopes around 1.6V/decade and on-to-off current ratios of 106-107. Both systems show considerable improvement over printed TFTs with Ag nanoparticle source-drain electrodes. Results on film resistivity and morphology are discussed along with device characteristic analysis.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

NASA Astrophysics Data System (ADS)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing BTBT leakage. With further replacement of raised InGaAs spacers by recessed, doping-graded InP spacers at high field regions, BTBT leakage can be reduced ~100:1. Using the above-mentioned techniques, record high performance InAs MOSFETs with a 2.7 nm InAs channel and a ZrO2 gate dielectric were demonstrated with Ion = 500 microA/microm at Ioff = 100 nA/microm and VDS =0.5 V, showing the highest on-state performance among all the III-V MOSFETs and comparable performance to 22 nm Si FinFETs. Record low leakage InGaAs MOSFETs with recessed InP source/drain spacers were also demonstrated with minimum I off = 60 pA/microm at 30 nm-Lg , and Ion = 150 microA/microm at I off = 1 nA/microm and VDS =0.5 V. This recessed InP source/drain spacer technique improves device scalability and enables III-V MOSFETs for low standby power logic applications. Furthermore, ultra-thin InAs channel MOSFETs were fabricated on Si substrates, exhibiting high yield and high transconductance gm ~2.0 mS/microm at 20 nm- Lg and VDS =0.5 V. With further scaling of gate lengths, a 12 nm-Lg III-V MOSFET has shown maximum Ion/Ioff ratio ~8.3x105 , confirming that III-V MOSFETs are scalable to sub-10-nm technology nodes.

Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

2016-07-01

Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

Modelling short channel mosfets for use in VLSI

NASA Technical Reports Server (NTRS)

Klafter, Alex; Pilorz, Stuart; Polosa, Rosa Loguercio; Ruddock, Guy; Smith, Andrew

1986-01-01

In an investigation of metal oxide semiconductor field effect transistor (MOFSET) devices, a one-dimensional mathematical model of device dynamics was prepared, from which an accurate and computationally efficient drain current expression could be derived for subsequent parameter extraction. While a critical review revealed weaknesses in existing 1-D models (Pao-Sah, Pierret-Shields, Brews, and Van de Wiele), this new model in contrast was found to allow all the charge distributions to be continuous, to retain the inversion layer structure, and to include the contribution of current from the pinched-off part of the device. The model allows the source and drain to operate in different regimes. Numerical algorithms used for the evaluation of surface potentials in the various models are presented.

Analytic drain current model for III-V cylindrical nanowire transistors

NASA Astrophysics Data System (ADS)

Marin, E. G.; Ruiz, F. G.; Schmidt, V.; Godoy, A.; Riel, H.; Gámiz, F.

2015-07-01

An analytical model is proposed to determine the drain current of III-V cylindrical nanowires (NWs). The model uses the gradual channel approximation and takes into account the complete analytical solution of the Poisson and Schrödinger equations for the Γ-valley and for an arbitrary number of subbands. Fermi-Dirac statistics are considered to describe the 1D electron gas in the NWs, being the resulting recursive Fermi-Dirac integral of order -1/2 successfully integrated under reasonable assumptions. The model has been validated against numerical simulations showing excellent agreement for different semiconductor materials, diameters up to 40 nm, gate overdrive biases up to 0.7 V, and densities of interface states up to 1013eV-1cm-2 .

Sulfur as a surface passivation for InP

NASA Technical Reports Server (NTRS)

Iyer, R.; Chang, R. R.; Lile, D. L.

1988-01-01

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

Design and simulation of a novel 1400 V-4000 V enhancement mode buried gate GaN HEMT for power applications

NASA Astrophysics Data System (ADS)

Faramehr, Soroush; Kalna, Karol; Igić, Petar

2014-11-01

A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V-4000 V for a source-to-drain spacing (LSD) of 6 μm-32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance RS for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm2 and 3.5 mΩ · cm2, respectively. Further improvement up to BV = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of RS = 35.5 mΩ · cm2. The leakage current in the proposed devices stays in the range of ˜5 × 10-9 mA mm-1.

Four-Quadrant Analog Multipliers Using G4-FETs

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Blalock, Benjamin; Christoloveanu, Sorin; Chen, Suheng; Akarvardar, Kerem

2006-01-01

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.

Wavelength dependence and multiple-induced states in photoresponses of copper phthalocyanine-doped gold nanoparticle single-electron device

NASA Astrophysics Data System (ADS)

Yamamoto, Makoto; Ueda, Rieko; Terui, Toshifumi; Imazu, Keisuke; Tamada, Kaoru; Sakano, Takeshi; Matsuda, Kenji; Ishii, Hisao; Noguchi, Yutaka

2014-01-01

We have proposed a gold nanoparticle (GNP)-based single-electron transistor (SET) doped with a dye molecule, where the molecule works as a photoresponsive floating gate. Here, we examined the source-drain current (I_{\\text{SD}}) at a constant drain voltage under light irradiation with various wavelengths ranging from 400 to 700 nm. Current change was enhanced at the wavelengths of 600 and 700 nm, corresponding to the optical absorption band of the doped molecule (copper phthalocyanine: CuPc). Moreover, several peaks appear in the histograms of I_{\\text{SD}} during light irradiation, indicating that multiple discrete states were induced in the device. The results suggest that the current change was initiated by the light absorption of CuPc and multiple CuPc molecules near the GNP working as a floating gate. Molecular doping can activate advanced device functions in GNP-based SETs.

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

NASA Astrophysics Data System (ADS)

Singh, Subhash; Mohapatra, Y. N.

2017-06-01

We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

On thermohydrologic conditions near high-level nuclear wastes emplaced in partially saturated fractured tuff: 1. Simulation studies with explicit consideration of fracture effects

NASA Astrophysics Data System (ADS)

Pruess, K.; Wang, J. S. Y.; Tsang, Y. W.

1990-06-01

We have performed modeling studies on the simultaneous transport of heat, liquid water, vapor, and air in partially saturated, fractured porous rock. Formation parameters were chosen as representative of the potential nuclear waste repository site in the Topopah Spring unit of the Yucca Mountain tuffs. The presence of fractures makes the transport problem very complex, both in terms of flow geometry and physics. The numerical simulator used for our flow calculations takes into account most of the physical effects believed to be important in multiphase fluid and heat flow. It has provisions for handling the extreme nonlinearities that arise in phase transitions, component disappearances, and capillary discontinuities at fracture faces. We model a region around an infinite linear string of nuclear waste canisters, taking into account both the discrete fractures and the porous matrix. Thermohydrologic conditions in the vicinity of the waste packages are found to depend strongly on relative permeability and capillary pressure characteristics of the fractures, which are unknown at the present time. If liquid held on the rough walls of drained fractures is assumed to be mobile, strong heat pipe effects are predicted. Under these conditions the host rock will remain in two-phase conditions right up to the emplacement hole, and formation temperatures will peak near 100°C. If it is assumed that liquid cannot move along drained fractures, the region surrounding the waste packages is predicted to dry up, and formation temperatures will rise beyond 200°C. A substantial fraction of waste heat can be removed if emplacement holes are left open and ventilated, as opposed to backfilled and sealed emplacement conditions. Comparing our model predictions with observations from in situ heater experiments reported by Zimmerman and coworkers, some intriguing similarities are noted. However, for a quantitative evaluation, additional carefully controlled laboratory and field experiments will be needed.

On current transients in MoS2 Field Effect Transistors.

PubMed

Macucci, Massimo; Tambellini, Gerry; Ovchinnikov, Dmitry; Kis, Andras; Iannaccone, Giuseppe; Fiori, Gianluca

2017-09-14

We present an experimental investigation of slow transients in the gate and drain currents of MoS 2 -based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude that there are at least two independent trapping mechanisms: trapping of charges in the silicon oxide substrate, occurring with time constants of the order of tens of seconds and involving charge motion orthogonal to the MoS 2 sheet, and trapping at the channel surface, which occurs with much longer time constants, in particular when the device is in a vacuum. We observe that the presence of such slow phenomena makes it very difficult to perform reliable low-frequency noise measurements, requiring a stable and repeatable steady-state bias point condition, and may explain the sometimes contradictory results that can be found in the literature about the dependence of the flicker noise power spectral density on gate bias.

Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration.

PubMed

Hayakawa, Ryoma; Chikyow, Toyohiro; Wakayama, Yutaka

2017-08-10

Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C 60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Linking carbon and hydrologic fluxes in the critical zone: Observations from high-frequency monitoring of a weathered bedrock vadose zone

NASA Astrophysics Data System (ADS)

Tune, A. K.; Druhan, J. L.; Wang, J.; Cargill, S.; Murphy, C.; Rempe, D. M.

2017-12-01

A principle challenge in quantifying feedbacks between continental weathering and atmospheric CO2 is to improve understanding of how biogeochemical processes in the critical zone influence the distribution and mobility of organic and inorganic carbon. In particular, in landscapes characterized by thin soils and heterogeneous weathered and fractured bedrock, little data exist to inform and constrain predictive models for carbon dynamics. Here, we present the results of an intensive water and gas sampling campaign across an 18 m thick, variably saturated argillite weathering profile in the Eel River CZO. We monitor water content in situ and regularly collect samples of freely-draining water, tightly-held water, and gas through wet and dry seasons using a novel Vadose-zone Monitoring System (VMS) consisting of sensors and samplers distributed across a 20 m long inclined borehole. This novel approach facilitates the interception of gas and water during transport across the entire variably saturated weathering profile. The data demonstrate that seasonal changes in saturation control the vertical distribution and mobility of carbon in the fractured critical zone. Concentrations of gaseous CO2, O2, and dissolved organic and inorganic carbon fluctuate significantly and repeatably with seasonal additions of water infiltrating the weathered bedrock. A persistent vertical structure in the concentrations of dissolved phases and gas concentrations broadly corresponds to depths associated with unsaturated, seasonally saturated, and chronically saturated zones. Associated variations in the vertical structure of mineralogy and elemental composition, including solid phase organic carbon content, are observed in core obtained during drilling. Together, our observations indicate significant respiration of organic carbon at depths greater than the base of the soil, and thus motivate further investigation of the role of heterogeneous weathered, bedrock environments, which are needed to improve quantitative models for feedbacks between terrestrial and atmospheric CO2.

Shallow Groundwater Discharge into Urban Drains: Identifying the Missing Link to Define Urban Typologies for Impact Assessment of Urbanization on Water and Nutrient Balances

NASA Astrophysics Data System (ADS)

Ocampo, C. J.; Oldham, C. E.

2015-12-01

Groundwater and surface water (GW-SW) interaction in drains of many sandy coastal plain areas displays an ephemeral hydrological regime, as often shifts occur in their hydraulic functioning from a losing to a gaining water conditions upon the position of the surrounding shallow water table (SWT). Urbanization in such areas and stormwater management strategies enhancing infiltration have the potential to alter the infiltration rates and the subsurface water storage dynamics with consequences for the residence time of the water and nutrient transformations prior their discharge into receiving SW drains. Identifying first order control on the above processes will assist the improvement of assessment tools for better urban development. This work presents findings on the hydrodynamics of the GW-SW water exchange in two drains of the Perth Coastal Plain area (Western Australia, Australia) impacted by a SWT developing on a layered variable texture soil: a peri-urban drain and a restored living stream drain in urban residential area. A multi-technique approach was used to investigate water mass balance and fluxes over a reach scale and involved continuous records of hydrometric data for GW-SW interactions, passive tracers for water pathway identification, pore water temperature for vertical water exchange, and differential SW discharge using an Acoustic Doppler Current Profiler. Results highlighted differences in the GW-SW interactions between both drains under stormflow and baseflow conditions. A substantial increase of GW discharge into the drain coincided with the full development of a SWT over a seasonal scale at the peri-urban drain, which suggests a more natural water infiltration and redistribution in the subsurface. In contrast, a large volume of infiltrated rain water was discharged into the living stream over a period of few weeks regardless of the development of the surrounding SWT, which suggests the influence of underground pipe system in water redistribution. The results contributed to identify key physical parameters to define urban typologies, quantify the subsurface storage discharge and residence time, and finally assess the transport and transformations of nutrients using a generalised Damköhler number. Future work will populate the framework with other study cases.

Volume change associated with formation and dissociation of hydrate in sediment

USGS Publications Warehouse

Ruppel, Carolyn D.; Lee, J.Y.; Santamarina, J. Carlos

2017-01-01

Gas hydrate formation and dissociation in sediments are accompanied by changes in the bulk volume of the sediment and can lead to changes in sediment properties, loss of integrity for boreholes, and possibly regional subsidence of the ground surface over areas where methane might be produced from gas hydrate in the future. Experiments on sand, silts, and clay subject to different effective stress and containing different saturations of hydrate formed from dissolved phase tetrahydrofuran are used to systematically investigate the impact of gas hydrate formation and dissociation on bulk sediment volume. Volume changes in low specific surface sediments (i.e., having a rigid sediment skeleton like sand) are much lower than those measured in high specific surface sediments (e.g., clay). Early hydrate formation is accompanied by contraction for all soils and most stress states in part because growing gas hydrate crystals buckle skeletal force chains. Dilation can occur at high hydrate saturations. Hydrate dissociation under drained, zero lateral strain conditions is always associated with some contraction, regardless of soil type, effective stress level, or hydrate saturation. Changes in void ratio during formation-dissociation decrease at high effective stress levels. The volumetric strain during dissociation under zero lateral strain scales with hydrate saturation and sediment compressibility. The volumetric strain during dissociation under high shear is a function of the initial volume average void ratio and the stress-dependent critical state void ratio of the sediment. Other contributions to volume reduction upon hydrate dissociation are related to segregated hydrate in lenses and nodules. For natural gas hydrates, some conditions (e.g., gas production driven by depressurization) might contribute to additional volume reduction by increasing the effective stress.

On the coupled unsaturated-saturated flow process induced by vertical, horizontal, and slant wells in unconfined aquifers

NASA Astrophysics Data System (ADS)

Liang, Xiuyu; Zhan, Hongbin; Zhang, You-Kuan; Liu, Jin

2017-03-01

Conventional models of pumping tests in unconfined aquifers often neglect the unsaturated flow process. This study concerns the coupled unsaturated-saturated flow process induced by vertical, horizontal, and slant wells positioned in an unconfined aquifer. A mathematical model is established with special consideration of the coupled unsaturated-saturated flow process and the well orientation. Groundwater flow in the saturated zone is described by a three-dimensional governing equation and a linearized three-dimensional Richards' equation in the unsaturated zone. A solution in the Laplace domain is derived by the Laplace-finite-Fourier-transform and the method of separation of variables, and the semi-analytical solutions are obtained using a numerical inverse Laplace method. The solution is verified by a finite-element numerical model. It is found that the effects of the unsaturated zone on the drawdown of a pumping test exist at any angle of inclination of the pumping well, and this impact is more significant in the case of a horizontal well. The effects of the unsaturated zone on the drawdown are independent of the length of the horizontal well screen. The vertical well leads to the largest water volume drained from the unsaturated zone (W) during the early pumping time, and the effects of the well orientation on W values become insignificant at the later time. The screen length of the horizontal well does not affect W for the whole pumping period. The proposed solutions are useful for the parameter identification of pumping tests with a general well orientation (vertical, horizontal, and slant) in unconfined aquifers affected from above by the unsaturated flow process.

Simultaneous measurement of macro- and microvascular blood flow and oxygen saturation for quantification of muscle oxygen consumption.

PubMed

Englund, Erin K; Rodgers, Zachary B; Langham, Michael C; Mohler, Emile R; Floyd, Thomas F; Wehrli, Felix W

2018-02-01

To investigate the relationship between blood flow and oxygen consumption in skeletal muscle, a technique called "Velocity and Perfusion, Intravascular Venous Oxygen saturation and T2*" (vPIVOT) is presented. vPIVOT allows the quantification of feeding artery blood flow velocity, perfusion, draining vein oxygen saturation, and muscle T2*, all at 4-s temporal resolution. Together, the measurement of blood flow and oxygen extraction can yield muscle oxygen consumption ( V˙O2) via the Fick principle. In five subjects, vPIVOT-derived results were compared with those obtained from stand-alone sequences during separate ischemia-reperfusion paradigms to investigate the presence of measurement bias. Subsequently, in 10 subjects, vPIVOT was applied to assess muscle hemodynamics and V˙O2 following a bout of dynamic plantar flexion contractions. From the ischemia-reperfusion paradigm, no significant differences were observed between data from vPIVOT and comparison sequences. After exercise, the macrovascular flow response reached a maximum 8 ± 3 s after relaxation; however, perfusion in the gastrocnemius muscle continued to rise for 101 ± 53 s. Peak V˙O2 calculated based on mass-normalized arterial blood flow or perfusion was 15.2 ± 6.7 mL O 2 /min/100 g or 6.0 ± 1.9 mL O 2 /min/100 g, respectively. vPIVOT is a new method to measure blood flow and oxygen saturation, and therefore to quantify muscle oxygen consumption. Magn Reson Med 79:846-855, 2018. © 2017 International Society for Magnetic Resonance in Medicine. © 2017 International Society for Magnetic Resonance in Medicine.

Spatial variability of herbicide mobilisation and transport at catchment scale: insights from a field experiment

NASA Astrophysics Data System (ADS)

Doppler, T.; Camenzuli, L.; Hirzel, G.; Krauss, M.; Lück, A.; Stamm, C.

2012-02-01

During rain events, herbicides can be transported from their point of application to surface waters where they may harm aquatic organisms. Since the spatial pattern of mobilisation and transport is heterogeneous, the contributions of different fields to the herbicide load in the stream may differ considerably within one catchment. Therefore, the prediction of contributing areas could help to target mitigation measures efficiently to those locations where they reduce herbicide pollution the most. Such spatial predictions require sufficient insight into the underlying transport processes. To improve the understanding of the process chain of herbicide mobilisation on the field and the subsequent transport through the catchment to the stream, we performed a controlled herbicide application on corn fields in a small agricultural catchment (ca. 1 km2) with intensive crop production in the Swiss Plateau. For two months after application in 2009, water samples were taken at different locations in the catchment (overland flow, tile drains and open channel) with a high temporal resolution during rain events. We also analysed soil samples from the experimental fields and measured discharge, groundwater level, soil moisture and the occurrence of overland flow at several locations. Several rain events with varying intensities and magnitudes occurred during the study period. Overland flow and erosion were frequently observed in the entire catchment. Infiltration excess and saturation excess overland flow were both observed. However, the main herbicide loss event was dominated by infiltration excess. This is in contrast to earlier studies in the Swiss Plateau, demonstrating that saturation excess overland flow was the dominant process. Despite the frequent and wide-spread occurrence of overland flow, most of this water did not directly reach the channel. It mostly got retained in small sinks in the catchment. From there, it reached the stream via macropores and tile drains. Manholes of the drainage system and catch basins for road and farmyard runoff acted as additional shortcuts to the stream. Although fast flow processes like overland and macropore flow reduce the influence of herbicide properties due to short travel times, sorption properties influenced the herbicide transfer from ponding overland flow to tile drains (macropore flow). However, no influence of sorption was observed during the mobilisation of the herbicides from soil to overland flow. These two observations on the role of herbicide properties contradict, to some degrees, previous findings. They demonstrate that valuable insight can be gained by spatially detailed observations along the flow paths.

DC and analog/RF performance optimisation of source pocket dual work function TFET

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Sharma, Dheeraj; Kondekar, Pravin; Nigam, Kaushal; Baronia, Sagar

2017-12-01

We investigate a systematic study of source pocket tunnel field-effect transistor (SP TFET) with dual work function of single gate material by using uniform and Gaussian doping profile in the drain region for ultra-low power high frequency high speed applications. For this, a n+ doped region is created near the source/channel junction to decrease the depletion width results in improvement of ON-state current. However, the dual work function of the double gate is used for enhancement of the device performance in terms of DC and analog/RF parameters. Further, to improve the high frequency performance of the device, Gaussian doping profile is considered in the drain region with different characteristic lengths which decreases the gate to drain capacitance and leads to drastic improvement in analog/RF figures of merit. Furthermore, the optimisation is performed with different concentrations for uniform and Gaussian drain doping profile and for various sectional length of lower work function of the gate electrode. Finally, the effect of temperature variation on the device performance is demonstrated.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, James D.

1997-01-01

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, J.D.

1997-09-02

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

Strength of Wet and Dry Montmorillonite

NASA Astrophysics Data System (ADS)

Morrow, C. A.; Lockner, D. A.; Moore, D. E.

2015-12-01

Montmorillonite, an expandable smectite clay, is a common mineral in fault zones to a depth of around 3 km. Its low strength relative to other common fault gouge minerals is important in many models of fault rheology. However, the coefficient of friction is not well constrained in the literature due to the difficulty of establishing fully drained or fully dried states in the laboratory. For instance, in some reported studies, samples were either partially saturated or possibly over pressured, leading to wide variability in reported shear strength. In this study, the coefficient of friction, μ, of both saturated and oven-dried (at 150°C) Na-montmorillonite was measured at normal stresses up to 680 MPa at room temperature and shortening rates from 1.0 to 0.01 μm/s. Care was taken to shear saturated samples slowly enough to avoid pore fluid overpressure in the clay layers. Coefficients of friction are reported after 8 mm of axial displacement in a triaxial apparatus on saw-cut samples containing a layer of montmorillonite gouge, with either granite or sandstone driving blocks. For saturated samples, μ increased from around 0.1 at low pressure to 0.25 at the highest test pressures. In contrast, values for oven-dried samples decreased asymptotically from approximately 0.78 at 10 MPa normal stress to around 0.45 at 400-680 MPa. While wet and dry strengths approached each other with increasing effective normal stress, wet strength remained only about half of the dry strength at 600 MPa effective normal stress. The increased coefficient of friction can be correlated with a reduction in the number of loosely bound lubricating surface water layers on the clay platelets due to applied normal stress under saturated conditions. The steady-state rate dependence of friction, a-b, was positive and dependent on normal stress. For saturated samples, a-b increased linearly with applied normal stress from ~0 to 0.004, while for dry samples a-b decreased with increasing normal stress from 0.008 to 0.002. All values were either neutral or rate strengthening, indicating a tendency for stable sliding.

Modeling fecal bacteria transport and retention in agricultural and urban soils under saturated and unsaturated flow conditions.

PubMed

Balkhair, Khaled S

2017-03-01

Pathogenic bacteria, that enter surface water bodies and groundwater systems through unmanaged wastewater land application, pose a great risk to human health. In this study, six soil column experiments were conducted to simulate the vulnerability of agricultural and urban field soils for fecal bacteria transport and retention under saturated and unsaturated flow conditions. HYDRUS-1D kinetic attachment and kinetic attachment-detachment models were used to simulate the breakthrough curves of the experimental data by fitting model parameters. Results indicated significant differences in the retention and drainage of bacteria between saturated and unsaturated flow condition in the two studied soils. Flow under unsaturated condition retained more bacteria than the saturated flow case. The high bacteria retention in the urban soil compared to agricultural soil is ascribed not only to the dynamic attachment and sorption mechanisms but also to the greater surface area of fine particles and low flow rate. All models simulated experimental data satisfactorily under saturated flow conditions; however, under variably saturated flow, the peak concentrations were overestimated by the attachment-detachment model and underestimated by the attachment model with blocking. The good match between observed data and simulated concentrations by the attachment model which was supported by the Akaike information criterion (AIC) for model selection indicates that the first-order attachment coefficient was sufficient to represent the quantitative and temporal distribution of bacteria in the soil column. On the other hand, the total mass balance of the drained and retained bacteria in all transport experiments was in the range of values commonly found in the literature. Regardless of flow conditions and soil texture, most of the bacteria were retained in the top 12 cm of the soil column. The approaches and the models used in this study have proven to be a good tool for simulating fecal bacteria transport under a variety of initial and boundary flow conditions, hence providing a better understanding of the transport mechanism of bacteria as well as soil removal efficiency. Copyright © 2016 Elsevier Ltd. All rights reserved.

Soil Organic Matter Stabilization via Mineral Interactions in Forest Soils with Varying Saturation Frequency

NASA Astrophysics Data System (ADS)

Possinger, A. R.; Inagaki, T.; Bailey, S. W.; Kogel-Knabner, I.; Lehmann, J.

2017-12-01

Soil carbon (C) interaction with minerals and metals through surface adsorption and co-precipitation processes is important for soil organic C (SOC) stabilization. Co-precipitation (i.e., the incorporation of C as an "impurity" in metal precipitates as they form) may increase the potential quantity of mineral-associated C per unit mineral surface compared to surface adsorption: a potentially important and as yet unaccounted for mechanism of C stabilization in soil. However, chemical, physical, and biological characterization of co-precipitated SOM as such in natural soils is limited, and the relative persistence of co-precipitated C is unknown, particularly under dynamic environmental conditions. To better understand the relationships between SOM stabilization via organometallic co-precipitation and environmental variables, this study compares mineral-SOM characteristics across a forest soil (Spodosol) hydrological gradient with expected differences in co-precipitation of SOM with iron (Fe) and aluminum (Al) due to variable saturation frequency. Soils were collected from a steep, well-drained forest soil transect with low, medium, and high frequency of water table intrusion into surface soils (Hubbard Brook Experimental Forest, Woodstock, NH). Lower saturation frequency soils generally had higher C content, C/Fe, C/Al, and other indicators of co-precipitation interactions resulting from SOM complexation, transport, and precipitation, an important process of Spodosol formation. Preliminary Fe X-ray Absorption Spectroscopic (XAS) characterization of SOM and metal chemistry in low frequency profiles suggest co-precipitation of SOM in the fine fraction (<20 µm). Short-term (10d) aerobic incubation of high and low saturation frequency soils showed greater SOC mineralization per unit soil C for low saturation frequency (i.e., higher co-precipitation) soils; however, increased mineralization may be attributed to non-mineral associated fractions of SOM. Further work to identify the component of SOM contributing to rapid mineralization using 13C-labeled substrates will link the observed chemical characteristics (13C-NMR, C K-edge XANES, and Fe XAS) of mineral-organic associations resulting from varying saturation frequency with mechanisms driving mineralization processes.

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

NASA Astrophysics Data System (ADS)

Xu, Huifang; Dai, Yuehua

2017-02-01

A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

Toward refined environmental scenarios for ecological risk assessment of down-the-drain chemicals in freshwater environments.

PubMed

Franco, Antonio; Price, Oliver R; Marshall, Stuart; Jolliet, Olivier; Van den Brink, Paul J; Rico, Andreu; Focks, Andreas; De Laender, Frederik; Ashauer, Roman

2017-03-01

Current regulatory practice for chemical risk assessment suffers from the lack of realism in conventional frameworks. Despite significant advances in exposure and ecological effect modeling, the implementation of novel approaches as high-tier options for prospective regulatory risk assessment remains limited, particularly among general chemicals such as down-the-drain ingredients. While reviewing the current state of the art in environmental exposure and ecological effect modeling, we propose a scenario-based framework that enables a better integration of exposure and effect assessments in a tiered approach. Global- to catchment-scale spatially explicit exposure models can be used to identify areas of higher exposure and to generate ecologically relevant exposure information for input into effect models. Numerous examples of mechanistic ecological effect models demonstrate that it is technically feasible to extrapolate from individual-level effects to effects at higher levels of biological organization and from laboratory to environmental conditions. However, the data required to parameterize effect models that can embrace the complexity of ecosystems are large and require a targeted approach. Experimental efforts should, therefore, focus on vulnerable species and/or traits and ecological conditions of relevance. We outline key research needs to address the challenges that currently hinder the practical application of advanced model-based approaches to risk assessment of down-the-drain chemicals. Integr Environ Assess Manag 2017;13:233-248. © 2016 SETAC. © 2016 SETAC.

Random telegraph signals by alkanethiol-protected Au nanoparticles in chemically assembled single-electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kano, Shinya; CREST, Japan Science and Technology Agency, Yokohama 226-8503; Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE

2013-12-14

We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low as 300 mK. The RTSs in the chemically assembled SET were investigated by measuring the source–drain current, using a histogram of the RTS dwell time, and calculating the power spectrum density of the drain current–time characteristics. It was found that the dwell time of the RTS was dependent on the drain voltage of the SET, but was independent of the gate voltage. Considering the spatial structure of the chemically assembled SET, the origin of the RTS is attributed to the trapped chargesmore » on an alkanethiol-protected Au nanoparticle positioned near the SET. These results are important as they will help to realize stable chemically assembled SETs in practical applications.« less

An improved model to predict bandwidth enhancement in an inductively tuned common source amplifier.

PubMed

Reza, Ashif; Misra, Anuraag; Das, Parnika

2016-05-01

This paper presents an improved model for the prediction of bandwidth enhancement factor (BWEF) in an inductively tuned common source amplifier. In this model, we have included the effect of drain-source channel resistance of field effect transistor along with load inductance and output capacitance on BWEF of the amplifier. A frequency domain analysis of the model is performed and a closed-form expression is derived for BWEF of the amplifier. A prototype common source amplifier is designed and tested. The BWEF of amplifier is obtained from the measured frequency response as a function of drain current and load inductance. In the present work, we have clearly demonstrated that inclusion of drain-source channel resistance in the proposed model helps to estimate the BWEF, which is accurate to less than 5% as compared to the measured results.

Conjunctival oedema as a potential objective sign of intracranial hypertension: a short illustrated review and three case reports.

PubMed

Toalster, Nicholas; Jeffree, Rosalind L

2013-11-01

Periorbital and conjunctival oedema has been reported anecdotally by patients with raised intracranial pressure states. We present three clinical cases of this phenomenon and discuss the current evidence for pathways by which cerebrospinal fluid (CSF) drains in relation to conjunctival oedema. We reviewed the available literature using PubMed, in regards to conjunctival oedema as it relates to intracranial hypertension, and present the clinical history, radiology and orbital photographs of three cases we have observed. Only one previous publication has linked raised intracranial pressure (ICP) to conjuctival oedema. The weight of evidence supports the observation that the majority of CSF drains along the cranial nerves as opposed to via the arachnoid projections. Conjunctival oedema may be a clinical manifestation of CSF draining via the optic nerve in elevated ICP states.

Two-Dimensional Quantum Model of a Nanotransistor

NASA Technical Reports Server (NTRS)

Govindan, T. R.; Biegel, B.; Svizhenko, A.; Anantram, M. P.

2009-01-01

A mathematical model, and software to implement the model, have been devised to enable numerical simulation of the transport of electric charge in, and the resulting electrical performance characteristics of, a nanotransistor [in particular, a metal oxide/semiconductor field-effect transistor (MOSFET) having a channel length of the order of tens of nanometers] in which the overall device geometry, including the doping profiles and the injection of charge from the source, gate, and drain contacts, are approximated as being two-dimensional. The model and software constitute a computational framework for quantitatively exploring such device-physics issues as those of source-drain and gate leakage currents, drain-induced barrier lowering, and threshold voltage shift due to quantization. The model and software can also be used as means of studying the accuracy of quantum corrections to other semiclassical models.

A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

NASA Astrophysics Data System (ADS)

Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

NASA Astrophysics Data System (ADS)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

PubMed

Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2014-07-23

Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

Electrical properties of AlGaN/GaN HEMTs in stretchable geometries

NASA Astrophysics Data System (ADS)

Tompkins, R. P.; Mahaboob, I.; Shahedipour-Sandvik, F.; Lazarus, N.

2017-10-01

Many biological materials are naturally soft and stretchable, far more so than crystalline semiconductors. Creating systems that can be placed directly on a surface such as human skin has required new approaches in electronic device design and materials, a field known as stretchable electronics. One common method for fabricating a highly brittle semiconductor device able to survive tens of percent strain is to incorporate stress relief structures ('waves'). Although the mechanical advantages of this approach are well known, the effects on the electrical behavior of a device such as a transistor compared to a more traditional geometry have not been studied. Here, AlGaN/GaN high electron mobility transistors (HEMTs) grown on rigid sapphire substrates were fabricated in a common wavy geometry, a sinusoid, with dimensions similar to those used in stretchable electronics. The study analyzes control parameters available to the designer including gate location along the sinusoid, angle the source-drain contacts make with the gate, as well as variation of the gate length at the peak of the sinusoid. Common electrical parameters such as saturation current density, threshold voltage, and transconductance were compared between the sinusoidal and conventional straight geometries and results found to fall to within experimental uncertainty, suggesting shifting to a stretchable geometry is possible without appreciably degrading semiconductor device performance.

Passivation of GaSb using molecular beam epitaxy Y{sub 2}O{sub 3} to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, R. L.; Chiang, T. H.; Hsueh, W. J.

2014-11-03

Molecular beam epitaxy deposited rare-earth oxide of Y{sub 2}O{sub 3} has effectively passivated GaSb, leading to low interfacial trap densities of (1–4) × 10{sup 12 }cm{sup −2} eV{sup −1} across the energy bandgap of GaSb. A high saturation drain current density of 130 μA/μm, a peak transconductance of 90 μS/μm, a low subthreshold slope of 147 mV/decade, and a peak field-effect hole mobility of 200 cm{sup 2}/V-s were obtained in 1 μm-gate-length self-aligned inversion-channel GaSb p-Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). In this work, high-κ/GaSb interfacial properties were better in samples with a high substrate temperature of 200 °C than in those with high κ's deposited at room temperature, in terms of themore » interfacial electrical properties, particularly, the reduction of interfacial trap densities near the conduction band and the MOSFET device performance.« less

Which species? A decision-support tool to guide plant selection in stormwater biofilters

NASA Astrophysics Data System (ADS)

Payne, Emily G. I.; Pham, Tracey; Deletic, Ana; Hatt, Belinda E.; Cook, Perran L. M.; Fletcher, Tim D.

2018-03-01

Plant species are diverse in form, function and environmental response. This provides enormous potential for designing nature-based stormwater treatment technologies, such as biofiltration systems. However, species can vary dramatically in their pollutant-removal performance, particularly for nitrogen removal. Currently, there is a lack of information on how to efficiently select from the vast palette of species. This study aimed to identify plant traits beneficial to performance and create a decision-support tool to screen species for further testing. A laboratory experiment using 220 biofilter columns paired plant morphological characteristics with nitrogen removal and water loss for 20 Australian native species and two lawn grasses. Testing was undertaken during wet and dry conditions, for two biofilter designs (saturated zone and free-draining). An extensive root system and high total biomass were critical to the effective removal of total nitrogen (TN) and nitrate (NO3-), driven by high nitrogen assimilation. The same characteristics were key to performance under dry conditions, and were associated with high water use for Australian native plants; linking assimilation and transpiration. The decision-support tool uses these scientific relationships and readily-available information to identify the morphology, natural distribution and stress tolerances likely to be good predictors of plant nitrogen and water uptake.

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

NASA Astrophysics Data System (ADS)

Van Hove, Marleen; Posthuma, Niels; Geens, Karen; Wellekens, Dirk; Li, Xiangdong; Decoutere, Stefaan

2018-04-01

p-GaN gate enhancement mode power transistors were processed in a Si CMOS processing line on 200 mm Si(111) substrates using Au-free metallization schemes. Si/Ti/Al/Ti/TiN ohmic contacts were formed after full recessing of the AlGaN barrier, followed by a HCl-based wet cleaning step. The electrical performance of devices aligned to the [11\\bar{2}0] and the perpendicular [1\\bar{1}00] directions was compared. The ohmic contact resistance was decreased from 1 Ω·mm for the [11\\bar{2}0] direction to 0.35 Ω·mm for the [1\\bar{1}00] direction, resulting in an increase of the drain saturation current from 0.5 to 0.6 A/mm, and a reduction of the on-resistance from 6.4 to 5.1 Ω·mm. Moreover, wafer mapping of the device characteristics over the 200 mm wafer showed a tighter statistical distribution for the [1\\bar{1}00] direction. However, by using an optimized sulfuric/ammonia peroxide (SPM/APM) cleaning step, the ohmic contact resistance could be lowered to 0.3 Ω·mm for both perpendicular directions.

A programmable point-of-care device for external CSF drainage and monitoring.

PubMed

Simkins, Jeffrey R; Subbian, Vignesh; Beyette, Fred R

2014-01-01

This paper presents a prototype of a programmable cerebrospinal fluid (CSF) external drainage system that can accurately measure the dispensed fluid volume. It is based on using a miniature spectrophotometer to collect color data to inform drain rate and pressure monitoring. The prototype was machined with 1 μm dimensional accuracy. The current device can reliably monitor the total accumulated fluid volume, the drain rate, the programmed pressure, and the pressure read from the sensor. Device requirements, fabrication processes, and preliminary results with an experimental set-up are also presented.

Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

NASA Astrophysics Data System (ADS)

Madan, Jaya; Chaujar, Rishu

2017-02-01

This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is analysed that the source pocket located at the source-channel junction narrows the tunneling barrier width at the tunneling junction and thereby enhances the ON-state current of GAA-TFET. Further, it is obtained that the GDU resists the extension of carrier density (built-up under the gated region) towards the drain side (under the underlapped length), thereby suppressing the ambipolar current and reducing the parasitic capacitances of GAA-TFET. Consequently, the amalgamated merits of both engineering schemes are obtained in GDU-PNIN-GAA-TFET that thus conquers the greatest challenges faced by TFET. Thus, GDU-PNIN-GAA-TFET results in an up-gradation in the overall performance of GAA-TFET. Moreover, it is realised that the RF figure of merits FOMs such as cut-off frequency (fT) and maximum oscillation frequency (fMAX) are also considerably improved with integration of source pocket on GAA-TFET. Thus, the improved analog and RF performance of GDU-PNIN-GAA-TFET makes it ideal for low power and high-speed applications.

RF dual-gate-trench LDMOS on InGaAs with improved performance

NASA Astrophysics Data System (ADS)

Payal, M.; Singh, Y.

2018-02-01

A new power dual-gate-trench LDMOSFET (DGTLDMOS) structure implemented on emerging InGaAs material is proposed. The proposed device consists of two gates out of which one gate is placed horizontally on the surface while other gate is located vertically in a trench. The dual-gate structure of DGTLDMOS creates two channels in p-base which carry current simultaneously from drain to source. This not only enhances the drain current (ID) but also reduces specific on-resistance (Ron,sp) and improves the peak transconductance (gm) resulting higher cut-off frequency (fT) and maximum oscillation frequency (fmax). Another trench filled with Al2O3 is placed in the drift region between gate and drain to enhance reduced-surface-field effect leading to higher breakdown voltage (Vbr) even at increased drift region doping. Based on 2D simulations, it is demonstrate that a DGTLDMOS designed for Vbr of 90 V achieves 2.2 times higher ID, 10 times reduction in Ron,sp, 1.8 times improvement in gm, 2.8 times increase in fT, and 1.8 times improvement in fmax with 3.3 times reduction in cell pitch as compared to the conventional LDMOS.

Ultrasound estimation of volume of postoperative pleural effusion in cardiac surgery patients.

PubMed

Usta, Engin; Mustafi, Migdat; Ziemer, Gerhard

2010-02-01

The aim of this study was to establish a practical simplified formula to facilitate the management of a frequently occurring postoperative complication, pleural effusion. Chest ultrasonography with better sensitivity and reliability in the diagnosis of pleural effusions than chest X-ray can be repeated serially at the bedside without any radiation risk. One hundred and fifty patients after cardiac surgery with basal pleural opacity on chest X-ray have been included in our prospective observational study during a two-year period. Effusion was confirmed on postoperative day (POD) 5.9+/-3.2 per chest ultrasound sonography. Inclusion criteria for subsequent thoracentesis based on clinical grounds alone and were not protocol-driven. Major inclusion criteria were: dyspnea and peripheral oxygen saturation (SpO(2)) levels < or = 92% and the maximal distance between mid-height of the diaphragm and visceral pleura (D > or = 30 mm). One hundred and thirty-five patients (90%) were drained with a 14-G needle if according to the simplified formula: V (ml)=[16 x D (mm)] the volume of the pleural effusion was around 500 ml. The success rate of obtaining fluid was 100% without any complications. There is a high accuracy between the estimated and drained pleural effusion. Simple quantification of pleural effusion enables time and cost-effective decision-making for thoracentesis in postoperative patients.

Maceral and palynomorph facies from two tertiary peat-forming environments in the Powder River Basin, U.S.A.

USGS Publications Warehouse

Moore, T.A.; Stanton, R.W.; Pocknall, D.T.; Glores, R.M.

1990-01-01

The differences between the depositional settings of the Smith and Anderson subbituminous coal beds (Paleocene, central Powder River Basin, U.S.A.) are interpreted on the basis of their petrographic composition and palynologic assemblages. The Smith coal bed is relatively thin ( 50 m) sandstone bodies of an abandoned meander-belt complex, the coal bed is generally thicker (> 7 m) and more widespread (> 15 km) in extent than the Smith coal bed. The sands provided a relatively stable, poorly compactable platform that was favorable to the growth of large, arborescent vegetation, such as the dominant ancestral Glyptostrobus, as well as ancestral Nyssa, Carya, and Betulaceae in a well-drained but moist swamp environment. The stability of the peat-forming environment resulted in a raised peat deposit of relatively uniform paleoflora and peat composition. In the thicker areas of the Anderson coal bed, the upward increase in carbonized plant components indicates a progressively drier or better-drained swamp environment. Intervals within the coal bed that overlie or are lateral to crevasse-splay deposits contain a high concentration of pollen attributable to Pterocarya and an absence of carbonized plant remains, an indication that ancestral Pterocarya preferred a water-saturated environment close to the edge of the swamp where detrial influx occurred. ?? 1990.

Effect of active-layer composition and structure on device performance of coplanar top-gate amorphous oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Yue, Lan; Meng, Fanxin; Chen, Jiarong

2018-01-01

The thin-film transistors (TFTs) with amorphous aluminum-indium-zinc-oxide (a-AIZO) active layer were prepared by dip coating method. The dependence of properties of TFTs on the active-layer composition and structure was investigated. The results indicate that Al atoms acted as a carrier suppressor in IZO films. Meanwhile, it was found that the on/off current ratio (I on/off) of TFT was improved by embedding a high-resistivity AIZO layer between the low-resistivity AIZO layer and gate insulator. The improvement in I on/off was attributed to the decrease in off-state current of double-active-layer TFT due to an increase in the active-layer resistance and the contact resistance between active layer and source/drain electrode. Moreover, on-state current and threshold voltage (V th) can be mainly controlled through thickness and Al content of the low-resistivity AIZO layer. In addition, the saturation mobility (μ sat) of TFTs was improved with reducing the size of channel width or/and length, which was attributed to the decrease in trap states in the semiconductor and at the semiconductor/gate-insulator interface with the smaller channel width or/and shorter channel length. Thus, we can demonstrate excellent TFTs via the design of active-layer composition and structure by utilizing a low cost solution-processed method. The resulting TFT, operating in enhancement mode, has a high μ sat of 14.16 cm2 V-1 s-1, a small SS of 0.40 V/decade, a close-to-zero V th of 0.50 V, and I on/off of more than 105.

Optical-resolution photoacoustic microscopy of ischemic stroke

NASA Astrophysics Data System (ADS)

Hu, Song; Gonzales, Ernie; Soetikno, Brian; Gong, Enhao; Yan, Ping; Maslov, Konstantin; Lee, Jin-Moo; Wang, Lihong V.

2011-03-01

A major obstacle in understanding the mechanism of ischemic stroke is the lack of a tool to noninvasively or minimally invasively monitor cerebral hemodynamics longitudinally. Here, we applied optical-resolution photoacoustic microscopy (OR-PAM) to longitudinally study ischemic stroke induced brain injury in a mouse model with transient middle cerebral artery occlusion (MCAO). OR-PAM showed that, during MCAO, the average hemoglobin oxygen saturation (sO2) values of feeder arteries and draining veins within the stroke core region dropped ~10% and ~34%, respectively. After reperfusion, arterial sO2 recovered back to the baseline; however, the venous sO2 increased above the baseline value by ~7%. Thereafter, venous sO2 values were close to the arterial sO2 values, suggesting eventual brain tissue infarction.

Charge-based MOSFET model based on the Hermite interpolation polynomial

NASA Astrophysics Data System (ADS)

Colalongo, Luigi; Richelli, Anna; Kovacs, Zsolt

2017-04-01

An accurate charge-based compact MOSFET model is developed using the third order Hermite interpolation polynomial to approximate the relation between surface potential and inversion charge in the channel. This new formulation of the drain current retains the same simplicity of the most advanced charge-based compact MOSFET models such as BSIM, ACM and EKV, but it is developed without requiring the crude linearization of the inversion charge. Hence, the asymmetry and the non-linearity in the channel are accurately accounted for. Nevertheless, the expression of the drain current can be worked out to be analytically equivalent to BSIM, ACM and EKV. Furthermore, thanks to this new mathematical approach the slope factor is rigorously defined in all regions of operation and no empirical assumption is required.

Linear increases in carbon nanotube density through multiple transfer technique.

PubMed

Shulaker, Max M; Wei, Hai; Patil, Nishant; Provine, J; Chen, Hong-Yu; Wong, H-S P; Mitra, Subhasish

2011-05-11

We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. We perform multiple transfers, whereby we transfer CNTs from several growth wafers onto the same target surface, thereby linearly increasing CNT density on the target substrate. This process, called transfer of nanotubes through multiple sacrificial layers, is highly scalable, and we demonstrate linear CNT density scaling up to 5 transfers. We also demonstrate that this linear CNT density increase results in an ideal linear increase in drain-source currents of carbon nanotube field effect transistors (CNFETs). Experimental results demonstrate that CNT density can be improved from 2 to 8 CNTs/μm, accompanied by an increase in drain-source CNFET current from 4.3 to 17.4 μA/μm.

Shuttle-promoted nano-mechanical current switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Taegeun, E-mail: tsong@ictp.it; Kiselev, Mikhail N.; Gorelik, Leonid Y.

2015-09-21

We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instabilitymore » and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.« less

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

PubMed

Li, Wenjun; Brubaker, Matt D; Spann, Bryan T; Bertness, Kris A; Fay, Patrick

2018-02-01

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10 8 , an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g m /SS of 0.41 μS/μm-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Inside Story of Gas Processes within Stormwater Biofilters: Does Greenhouse Gas Production Tarnish the Benefits of Nitrogen Removal?

PubMed

Payne, Emily G I; Pham, Tracey; Cook, Perran L M; Deletic, Ana; Hatt, Belinda E; Fletcher, Tim D

2017-04-04

Stormwater biofilters are dynamic environments, supporting diverse processes that act to capture and transform incoming pollutants. However, beneficial water treatment processes can be accompanied by undesirable greenhouse gas production. This study investigated the potential for nitrous oxide (N 2 O) and methane (CH 4 ) generation in dissolved form at the base of laboratory-scale stormwater biofilter columns. The influence of plant presence, species, inflow frequency, and inclusion of a saturated zone and carbon source were studied. Free-draining biofilters remained aerobic with negligible greenhouse gas production during storm events. Designs with a saturated zone were oxygenated at their base by incoming stormwater before anaerobic conditions rapidly re-established, although extended dry periods allowed the reintroduction of oxygen by evapotranspiration. Production of CH 4 and N 2 O in the saturated zone varied significantly in response to plant presence, species, and wetting and drying. Concentrations of N 2 O typically peaked rapidly following stormwater inundation, associated with limited plant root systems and poorer nitrogen removal from biofilter effluent. Production of CH 4 also commenced quickly but continued throughout the anaerobic interevent period and lacked clear relationships with plant characteristics or nitrogen removal performance. Dissolved greenhouse gas concentrations were highly variable, but peak concentrations of N 2 O accounted for <1.5% of the incoming total nitrogen load. While further work is required to measure surface emissions, the potential for substantial release of N 2 O or CH 4 in biofilter effluent appears relatively low.

Water Saturation Relations and Their Diffusion-Limited Equilibration in Gas Shale: Implications for Gas Flow in Unconventional Reservoirs

NASA Astrophysics Data System (ADS)

Tokunaga, Tetsu K.; Shen, Weijun; Wan, Jiamin; Kim, Yongman; Cihan, Abdullah; Zhang, Yingqi; Finsterle, Stefan

2017-11-01

Large volumes of water are used for hydraulic fracturing of low permeability shale reservoirs to stimulate gas production, with most of the water remaining unrecovered and distributed in a poorly understood manner within stimulated regions. Because water partitioning into shale pores controls gas release, we measured the water saturation dependence on relative humidity (rh) and capillary pressure (Pc) for imbibition (adsorption) as well as drainage (desorption) on samples of Woodford Shale. Experiments and modeling of water vapor adsorption into shale laminae at rh = 0.31 demonstrated that long times are needed to characterize equilibrium in larger (5 mm thick) pieces of shales, and yielded effective diffusion coefficients from 9 × 10-9 to 3 × 10-8 m2 s-1, similar in magnitude to the literature values for typical low porosity and low permeability rocks. Most of the experiments, conducted at 50°C on crushed shale grains in order to facilitate rapid equilibration, showed significant saturation hysteresis, and that very large Pc (˜1 MPa) are required to drain the shales. These results quantify the severity of the water blocking problem, and suggest that gas production from unconventional reservoirs is largely associated with stimulated regions that have had little or no exposure to injected water. Gravity drainage of water from fractures residing above horizontal wells reconciles gas production in the presence of largely unrecovered injected water, and is discussed in the broader context of unsaturated flow in fractures.

Development of a numerical model for the electric current in burner-stabilised methane-air flames

NASA Astrophysics Data System (ADS)

Speelman, N.; de Goey, L. P. H.; van Oijen, J. A.

2015-03-01

This study presents a new model to simulate the electric behaviour of one-dimensional ionised flames and to predict the electric currents in these flames. The model utilises Poisson's equation to compute the electric potential. A multi-component diffusion model, including the influence of an electric field, is used to model the diffusion of neutral and charged species. The model is incorporated into the existing CHEM1D flame simulation software. A comparison between the computed electric currents and experimental values from the literature shows good qualitative agreement for the voltage-current characteristic. Physical phenomena, such as saturation and the diodic effect, are captured by the model. The dependence of the saturation current on the equivalence ratio is also captured well for equivalence ratios between 0.6 and 1.2. Simulations show a clear relation between the saturation current and the total number of charged particles created. The model shows that the potential at which the electric field saturates is strongly dependent on the recombination rate and the diffusivity of the charged particles. The onset of saturation occurs because most created charged particles are withdrawn from the flame and because the electric field effects start dominating over mass based diffusion. It is shown that this knowledge can be used to optimise ionisation chemistry mechanisms. It is shown numerically that the so-called diodic effect is caused primarily by the distance the heavier cations have to travel to the cathode.

Organic [6,6]-phenyl-C61-butyric-acid-methyl-ester field effect transistors: Analysis of the contact properties by combined photoemission spectroscopy and electrical measurements

NASA Astrophysics Data System (ADS)

Scheinert, S.; Grobosch, M.; Sprogies, J.; Hörselmann, I.; Knupfer, M.; Paasch, G.

2013-05-01

Carrier injection barriers determined by photoemission spectroscopy for organic/metal interfaces are widely accepted to determine the performance of organic field-effect transistors (OFET), which strongly depends on this interface at the source/drain contacts. This assumption is checked here in detail, and a more sophisticated connection is presented. According to the preparation process described in our recently published article [S. Scheinert, J. Appl. Phys. 111, 064502 (2012)], we prepared PCBM/Au and PCBM/Al samples to characterize the interface by photoemission and electrical measurements of PCBM based OFETs with bottom and top (TOC) contacts, respectively. The larger drain currents for TOC OFETs indicate the presence of Schottky contacts at source/drain for both metals. The hole injection barrier as determined by photoemission is 1.8 eV for both Al and Au. Therefore, the electron injection barriers are also the same. In contrast, the drain currents are orders of magnitude larger for the transistors with the Al contacts than for those with the Au contacts. We show that indeed the injection is determined by two other properties measured also by photoemission, the (reduced) work functions, and the interface dipoles, which have different sign for each contact material. In addition, we demonstrate by core-level and valence band photoemission that the deposition of gold as top contact onto PCBM results in the growth of small gold clusters. With increasing gold coverage, the clusters grow inside and begin to form a metallic, but not uniform, closed film onto PCBM.

Mapping global vulnerability index in mining sectors: A case study Moulares-Redayef aquifer system, southwestern Tunisia

NASA Astrophysics Data System (ADS)

Khelif, Nadia; Jmal, Ikram; Bouri, Salem

2016-09-01

Contrary to the DRASTIC model grouping together the saturated and unsaturated zones to compute a global intrinsic vulnerability index, the global vulnerability index method incorporates both hydrogeological and hydrochemical data for a comprehensive index mapping for the saturated zones. This concept depends on the behavior and the uses of the groundwater. The main aim of this study is to propose a scientific basis for sustainable land use planning and groundwater management of the Moulares-Reayef aquifer, located in Southwestern Tunisia. The overexploitation of this aquifer causes the threat of groundwater quality by various sources of pollution. The global vulnerability index was applied in the Moulares-Reayef aquifer. The results show that the most favorable zones to pollutant percolation are situated along the wadis (Tabaddit, Zallaz, Berka, …) which are drained by continuous discharges. The global vulnerability values were correlated with nitrates values for validation. It revealed a significant correlation showing that high values of nitrates occurred in highly vulnerable zones with a value of 0.69 for the Pearson coefficient. The global vulnerability evaluation shows that the aquifer is characterized by high vertical vulnerability and high susceptibility.

Radio-tracer techniques for the study of flow in saturated porous materials

USGS Publications Warehouse

Skibitzke, H.E.; Chapman, H.T.; Robinson, G.M.; McCullough, Richard A.

1961-01-01

An experiment was conducted by the U.S. Geological Survey to determine the feasibility of using a radioactive substance as a tracer in the study of microscopic flow in a saturated porous solid. A radioactive tracer was chosen in preference to dye or other chemical in order to eliminate effects of the tracer itself on the flow system such as those relating to density, viscosity and surface tension. The porous solid was artificial "sandstone" composed of uniform fine grains of sand bonded together with an epoxy adhesive. The sides of the block thus made were sealed with an epoxy coating compound to insure water-tightness. Because of the chemical inertness of the block it was possible to use radioactive phosphorus (P32). Ion-exchange equilibrium was created between the block and nonradioactive phosphoric acid. Then a tracer tagged with P32 was injected into the block in the desired geometric configuration, in this case, a line source. After equilibrium in isotopic exchange was reached between the block and the line source, the block was rinsed, drained and sawn into slices. It was found that a quantitative analysis of the flow system may be made by assaying the dissected block. ?? 1961.

Physicians' brain drain in Greece: a perspective on the reasons why and how to address it.

PubMed

Ifanti, Amalia A; Argyriou, Andreas A; Kalofonou, Foteini H; Kalofonos, Haralabos P

2014-08-01

This review study explores the "brain drain" currently evident amongst physicians in Greece, which is closely linked to the country's severe financial woes. In particular, it shows that the Greek healthcare labour market offers few opportunities and thus physicians are forsaking their homeland to seek jobs abroad. The main causes generating or greatly inflating the brain drain of Greek physicians are unemployment, job insecurity, income reduction, over-taxation, together with limited budgets for research institutes. It is argued that, to stop the evolving mass exodus of skilled medical staff, policy-makers should implement fiscal and human-centred approaches, thoroughly safeguarding both the right of skilled Greek physicians to work in their homeland with motivation and dignity, but also of Greek citizens to continue receiving high-quality healthcare by skilled physicians at times when this is mostly needed. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

Study on effective MOSFET channel length extracted from gate capacitance

NASA Astrophysics Data System (ADS)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Mitigating wildfire carbon loss in managed northern peatlands through restoration.

PubMed

Granath, Gustaf; Moore, Paul A; Lukenbach, Maxwell C; Waddington, James M

2016-06-27

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha(-1) emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change.

Mitigating wildfire carbon loss in managed northern peatlands through restoration

NASA Astrophysics Data System (ADS)

Granath, Gustaf; Moore, Paul A.; Lukenbach, Maxwell C.; Waddington, James M.

2016-06-01

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha-1 emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change.

Scaling properties of ballistic nano-transistors

PubMed Central

2011-01-01

Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade. PMID:21711899

Mitigating wildfire carbon loss in managed northern peatlands through restoration

PubMed Central

Granath, Gustaf; Moore, Paul A.; Lukenbach, Maxwell C.; Waddington, James M.

2016-01-01

Northern peatlands can emit large amounts of carbon and harmful smoke pollution during a wildfire. Of particular concern are drained and mined peatlands, where management practices destabilize an array of ecohydrological feedbacks, moss traits and peat properties that moderate water and carbon losses in natural peatlands. Our results demonstrate that drained and mined peatlands in Canada and northern Europe can experience catastrophic deep burns (>200 t C ha−1 emitted) under current weather conditions. Furthermore, climate change will cause greater water losses in these peatlands and subject even deeper peat layers to wildfire combustion. However, the rewetting of drained peatlands and the restoration of mined peatlands can effectively lower the risk of these deep burns, especially if a new peat moss layer successfully establishes and raises peat moisture content. We argue that restoration efforts are a necessary measure to mitigate the risk of carbon loss in managed peatlands under climate change. PMID:27346604

Photovoltaic and thermophotovoltaic devices with quantum barriers

DOEpatents

Wernsman, Bernard R [Jefferson Hills, PA

2007-04-10

A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.

Comparative and Developmental Anatomy of Cardiac Lymphatics

PubMed Central

Ratajska, A.; Gula, G.; Flaht-Zabost, A.; Czarnowska, E.; Ciszek, B.; Jankowska-Steifer, E.; Niderla-Bielinska, J.; Radomska-Lesniewska, D.

2014-01-01

The role of the cardiac lymphatic system has been recently appreciated since lymphatic disturbances take part in various heart pathologies. This review presents the current knowledge about normal anatomy and structure of lymphatics and their prenatal development for a better understanding of the proper functioning of this system in relation to coronary circulation. Lymphatics of the heart consist of terminal capillaries of various diameters, capillary plexuses that drain continuously subendocardial, myocardial, and subepicardial areas, and draining (collecting) vessels that lead the lymph out of the heart. There are interspecies differences in the distribution of lymphatic capillaries, especially near the valves, as well as differences in the routes and number of draining vessels. In some species, subendocardial areas contain fewer lymphatic capillaries as compared to subepicardial parts of the heart. In all species there is at least one collector vessel draining lymph from the subepicardial plexuses and running along the anterior interventricular septum under the left auricle and further along the pulmonary trunk outside the heart and terminating in the right venous angle. The second collector assumes a different route in various species. In most mammalian species the collectors run along major branches of coronary arteries, have valves and a discontinuous layer of smooth muscle cells. PMID:24592145

Comparative and developmental anatomy of cardiac lymphatics.

PubMed

Ratajska, A; Gula, G; Flaht-Zabost, A; Czarnowska, E; Ciszek, B; Jankowska-Steifer, E; Niderla-Bielinska, J; Radomska-Lesniewska, D

2014-01-01

The role of the cardiac lymphatic system has been recently appreciated since lymphatic disturbances take part in various heart pathologies. This review presents the current knowledge about normal anatomy and structure of lymphatics and their prenatal development for a better understanding of the proper functioning of this system in relation to coronary circulation. Lymphatics of the heart consist of terminal capillaries of various diameters, capillary plexuses that drain continuously subendocardial, myocardial, and subepicardial areas, and draining (collecting) vessels that lead the lymph out of the heart. There are interspecies differences in the distribution of lymphatic capillaries, especially near the valves, as well as differences in the routes and number of draining vessels. In some species, subendocardial areas contain fewer lymphatic capillaries as compared to subepicardial parts of the heart. In all species there is at least one collector vessel draining lymph from the subepicardial plexuses and running along the anterior interventricular septum under the left auricle and further along the pulmonary trunk outside the heart and terminating in the right venous angle. The second collector assumes a different route in various species. In most mammalian species the collectors run along major branches of coronary arteries, have valves and a discontinuous layer of smooth muscle cells.

Saturation of the Electric Field Transmitted to the Magnetosphere

NASA Technical Reports Server (NTRS)

Lyatsky, Wladislaw; Khazanov, George V.; Slavin, James A.

2010-01-01

We reexamined the processes leading to saturation of the electric field, transmitted into the Earth's ionosphere from the solar wind, incorporating features of the coupled system previously ignored. We took into account that the electric field is transmitted into the ionosphere through a region of open field lines, and that the ionospheric conductivity in the polar cap and auroral zone may be different. Penetration of the electric field into the magnetosphere is linked with the generation of the Alfven wave, going out from the ionosphere into the solar wind and being coupled with the field-aligned currents at the boundary of the open field limes. The electric field of the outgoing Alfven wave reduces the original electric field and provides the saturation effect in the electric field and currents during strong geomagnetic disturbances, associated with increasing ionospheric conductivity. The electric field and field-aligned currents of this Alfven wave are dependent on the ionospheric and solar wind parameters and may significantly affect the electric field and field-aligned currents, generated in the polar ionosphere. Estimating the magnitude of the saturation effect in the electric field and field-aligned currents allows us to improve the correlation between solar wind parameters and resulting disturbances in the Earth's magnetosphere.

Deployment of Indicator of Reduction in Soils (IRIS) Probes in Arctic Drained Thaw Lake Basins and Drainages: Time Integrated Signals of Soil Saturation and Redox

NASA Astrophysics Data System (ADS)

Heikoop, J. M.; Newman, B. D.; Hudak, M.; Gard, M.; Altmann, G.; Throckmorton, H.; Wilson, C. J.

2013-12-01

Climate driven warming and degradation of permafrost may lead to changes in the hydrology of low gradient regions like the North Slope of Alaska. Hydrologic changes will affect the saturation and redox state of soils in drained thaw lake basins (DTLBs), interlake areas, and associated drainages. These changes are being investigated at the Barrow Environmental Observatory (BEO) and surroundings as part of the Next Generation Ecosystem Experiment - Arctic project. As a complement to traditional redox and aqueous chemistry measurements, the use of indicator of reduction in soils (IRIS) probes is being assessed as a simple and cost-effective way to monitor redox changes. The probes consist of PVC sheets coated with a ferrihydrite paint. Under reducing conditions iron on these probes will partially dissolve. The amount of dissolution can be quantified by image analysis and related in a semi-quantitative fashion to redox conditions in the soils. IRIS probes have been successfully utilized in numerous temperate settings to demonstrate, for example, the presence of reducing soils for wetlands delineation. Test probes were installed in saturated soils for 48 hours in July, 2013. After 48 hours, minor reductive dissolution of ferrihydrite was observed. No sulfide precipitation was noted. As such, probes were installed in quadruplicate at 14 locations representing primarily outlet drainages from different-aged DTLBs and interlake areas. In each case, the probes were installed to refusal at the frost table within the active layer overlying the permafrost. IRIS probes were deployed adjacent to arrays of rhizon samplers used for soil pore water sampling so that time-integrated IRIS probe results can be compared to chemical results (a snapshot in time) obtained at the beginning and end of the monitoring period (probes will be extracted in September). Image analysis will employ LANL's GENIE technology. Field measurements of ferrous iron in water samples showed significant redox variation both between locations and with depth at each location. Values were lowest in surface waters (as low as zero mg/L) and were generally higher in soil pore water with values up to approximately 7 mg/L. Correlations between percentage iron removal from the IRIS probes and ferrous iron and other redox sensitive species will be presented. If correlations are significant, redox couples (ammonia/nitrate, Fe(II)/Fe(III), sulfide/sulfate) will be used to estimate Eh and to develop an empirical relationship for the use of IRIS probes in the BEO and surrounding environs.

Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Qin, Ting; Liao, Congwei; Huang, Shengxiang; Yu, Tianbao; Deng, Lianwen

2018-01-01

An analytical drain current model based on the surface potential is proposed for amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) with a synchronized symmetric dual-gate (DG) structure. Solving the electric field, surface potential (φS), and central potential (φ0) of the InGaZnO film using the Poisson equation with the Gaussian method and Lambert function is demonstrated in detail. The compact analytical model of current-voltage behavior, which consists of drift and diffusion components, is investigated by regional integration, and voltage-dependent effective mobility is taken into account. Comparison results demonstrate that the calculation results obtained using the derived models match well with the simulation results obtained using a technology computer-aided design (TCAD) tool. Furthermore, the proposed model is incorporated into SPICE simulations using Verilog-A to verify the feasibility of using DG InGaZnO TFTs for high-performance circuit designs.

Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-01-01

A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

Shot noise: from Schottky's vacuum tube to present-day quantum devices

NASA Astrophysics Data System (ADS)

Schonenberger, Christian; Oberholzer, Stefan

2004-05-01

Shot-noise in the electrical current through a 'device' is caused by random processes that determine the electron transport from source to drain. Two sources can be distinguished: on the hand, electrons may randomly emanate from the contacts (source and drain), because the relevant states in the reservoirs fluctuate. On the other hand, the transmission through the device is non-deterministic (non-classical). As we demonstrate in this article the former dominates noise in the vacuum tube, whereas the latter applies to coherent mesoscopic devices, which have been studied in great detail during the last decade.

Management of Chest Drains After Thoracic Resections.

PubMed

Filosso, Pier Luigi; Sandri, Alberto; Guerrera, Francesco; Roffinella, Matteo; Bora, Giulia; Solidoro, Paolo

2017-02-01

Immediately after lung resection, air tends to collect in the retrosternal part of the chest wall (in supine position), and fluids in its lower part (costodiaphragmatic sinus). Several general thoracic surgery textbooks currently recommend the placement of 2 chest tubes after major pulmonary resections, one anteriorly, to remove air, and another into the posterior and basilar region, to drain fluids. Recently, several authors advocated the placement of a single chest tube. In terms of air and fluid drainage, this technique demonstrated to be as effective as the conventional one after wedge resection or uncomplicated lobectomy. Copyright © 2016 Elsevier Inc. All rights reserved.

Nano-Transistor Modeling: Two Dimensional Green's Function Method

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

Two quantum mechanical effects that impact the operation of nanoscale transistors are inversion layer energy quantization and ballistic transport. While the qualitative effects of these features are reasonably understood, a comprehensive study of device physics in two dimensions is lacking. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL (Drain Induced Barrier Lowering), and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI).

Photon-assisted quantum transport in quantum point contacts

NASA Astrophysics Data System (ADS)

Hu, Qing

1993-02-01

We have studied the feasibility of photon-assisted quantum transport in semiconductor quantum point contacts or electron waveguides. Due to photon-induced intersubband transitions, it is expected that the drain/source conductance of the quantum point contacts can be modulated by far-infrared (f not less than 300 GHz) radiation, which is similar to the photon-assisted tunneling in superconducting tunnel junctions. An antenna/gate electrodes structure will be used to couple far-infrared photons into quantum point contacts of submicron dimensions. A calculation of the photon-induced drain/source current as a function of the far-infrared radiation power is also presented.

Performance analysis of junction-less double Gate n-p-n impact ionization MOS transistor (JLDG n-IMOS)

NASA Astrophysics Data System (ADS)

Chauhan, Manvendra Singh; Chauhan, R. K.

2018-04-01

This paper demonstrates a Junction-less Double Gate n-p-n Impact ionization MOS transistor (JLDG n-IMOS) on a very light doped p-type silicon body. Device structure proposed in the paper is based on charge plasma concept. There is no metallurgical junctions in the proposed device and does not need any impurity doping to create the drain and source regions. Due to doping-less nature, the fabrication process is simple for JLDG n-IMOS. The double gate engineering in proposed device leads to reduction in avalanche breakdown via impact ionization, generating large number of carriers in drain-body junction, resulting high ION current, small IOFF current and great improvement in ION/IOFF ratio. The simulation and examination of the proposed device have been performed on ATLAS device simulatorsoftware.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.

PubMed

Wang, Dapeng; Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-04-05

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses ( T IGZO ) are investigated. As the T IGZO increased, the turn-on voltage ( V on ) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²·V −1 ·s −1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the T IGZO . The PBS results exhibit that the V on shift is aggravated as the T IGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various T IGZO values is revealed using current–voltage and capacitance–voltage ( C – V ) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source ( C gs ) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the T IGZO value increased, the hump in the off state of the C gs curve was gradually weakened.

Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam

NASA Astrophysics Data System (ADS)

Gonçalves Filho, Luiz C.; Monte, David S.; Barros, Fabio R.; Santos, Luiz A. P.

2018-01-01

MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.

Evapotranspiration from drained wetlands: drivers, modeling, storage functions, and restoration implications

NASA Astrophysics Data System (ADS)

Shukla, S.; Wu, C. L.; Shrestha, N.

2017-12-01

Abstract Evapotranspiration (ET) is a major component of wetland and watershed water budgets. The effect of wetland drainage on ET is not well understood. We tested whether the current understanding of insignificant effect of drainage on ET in the temperate region wetlands applies to those in the sub-tropics. Eddy covariance (EC) based ET measurements were made for two years at two previously drained and geographically close wetlands in the Everglades region of Florida. One wetland was significantly drained with 97% of its storage capacity lost. The other was a more functional wetland with 42% of storage capacity lost. Annual average ET at the significantly drained wetland was 836 mm, 34% less than the function wetland (1271 mm) and the difference was statistically significant (p = 0.001). Such differences in wetland ET in the same climatic region have not been observed. The difference in ET was mainly due to drainage driven differences in inundation and associated effects on net radiation (Rn) and local relative humidity. Two daily ET models, a regression (r2 = 0.80) and a Relevance Vector Machine (RVM) model (r2 = 0.84), were developed with the latter being more robust. These models, when used in conjunction with hydrologic models, improved ET predictions for drained wetlands. Predictions from an integrated model showed that more intensely drained wetlands at higher elevation should be targeted for restoration of downstream flows (flooding) because they have the ability to loose higher water volume through ET which increases available water storage capacity of wetlands. Daily ET models can predict changes in ET for improved evaluation of basin-scale effects of restoration programs and climate change scenarios.

Evapotranspiration from drained wetlands with different hydrologic regimes: Drivers, modeling, and storage functions

NASA Astrophysics Data System (ADS)

Wu, Chin-Lung; Shukla, Sanjay; Shrestha, Niroj K.

2016-07-01

We tested whether the current understanding of insignificant effect of drainage on evapotranspiration (ET) in the temperate region wetlands applies to those in the subtropics. Hydro-climatic drivers causing the changes in drained wetlands were identified and used to develop a generic model to predict wetland ET. Eddy covariance (EC)-based ET measurements were made for two years at two differently drained but close by wetlands, a heavily drained wetland (SW) (97% reduced surface storage) and a more functional wetland (DW) (42% reduced storage). Annual ET for more intensively drained SW was 836 mm, 34% less than DW (1271 mm) and the difference was significant (p = 0.001). This difference was mainly due to drainage driven differences in inundation and associated effects on net radiation (Rn) and local relative humidity. Two generic daily ET models, a regression model (MSE = 0.44 mm2, R2 = 0.80) and a machine learning-based Relevance Vector Machine (RVM) model (MSE = 0.36 mm2, R2 = 0.84), were developed with the latter being more robust. The RVM model can predict changes in ET for different restoration scenarios; a 1.1 m rise in drainage level showed 7% increase ET (18 mm) at SW while the increase at DW was negligible. The additional ET, 28% of surface flow, can enhance water storage, flood protection, and climate mitigation services at SW compared to DW. More intensely drained wetlands at higher elevation should be targeted for restoration for enhanced storage through increased ET. The models developed can predict changes in ET for improved evaluation of basin-scale effects of restoration programs and climate change scenarios.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities.

PubMed

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-04-21

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 10(4) ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)(-1) just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

PubMed Central

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-01-01

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 104 ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)−1 just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling. PMID:27098051

Oxygen targeting in preterm infants using the Masimo SET Radical pulse oximeter

PubMed Central

Johnston, Ewen D; Boyle, Breidge; Juszczak, Ed; King, Andy; Brocklehurst, Peter; Stenson, Ben J

2011-01-01

Background A pretrial clinical improvement project for the BOOST-II UK trial of oxygen saturation targeting revealed an artefact affecting saturation profiles obtained from the Masimo Set Radical pulse oximeter. Methods Saturation was recorded every 10 s for up to 2 weeks in 176 oxygen dependent preterm infants in 35 UK and Irish neonatal units between August 2006 and April 2009 using Masimo SET Radical pulse oximeters. Frequency distributions of % time at each saturation were plotted. An artefact affecting the saturation distribution was found to be attributable to the oximeter's internal calibration algorithm. Revised software was installed and saturation distributions obtained were compared with four other current oximeters in paired studies. Results There was a reduction in saturation values of 87–90%. Values above 87% were elevated by up to 2%, giving a relative excess of higher values. The software revision eliminated this, improving the distribution of saturation values. In paired comparisons with four current commercially available oximeters, Masimo oximeters with the revised software returned similar saturation distributions. Conclusions A characteristic of the software algorithm reduces the frequency of saturations of 87–90% and increases the frequency of higher values returned by the Masimo SET Radical pulse oximeter. This effect, which remains within the recommended standards for accuracy, is removed by installing revised software (board firmware V4.8 or higher). Because this observation is likely to influence oxygen targeting, it should be considered in the analysis of the oxygen trial results to maximise their generalisability. PMID:21378398

Oxygen targeting in preterm infants using the Masimo SET Radical pulse oximeter.

PubMed

Johnston, Ewen D; Boyle, Breidge; Juszczak, Ed; King, Andy; Brocklehurst, Peter; Stenson, Ben J

2011-11-01

A pretrial clinical improvement project for the BOOST-II UK trial of oxygen saturation targeting revealed an artefact affecting saturation profiles obtained from the Masimo Set Radical pulse oximeter. Saturation was recorded every 10 s for up to 2 weeks in 176 oxygen dependent preterm infants in 35 UK and Irish neonatal units between August 2006 and April 2009 using Masimo SET Radical pulse oximeters. Frequency distributions of % time at each saturation were plotted. An artefact affecting the saturation distribution was found to be attributable to the oximeter's internal calibration algorithm. Revised software was installed and saturation distributions obtained were compared with four other current oximeters in paired studies. There was a reduction in saturation values of 87-90%. Values above 87% were elevated by up to 2%, giving a relative excess of higher values. The software revision eliminated this, improving the distribution of saturation values. In paired comparisons with four current commercially available oximeters, Masimo oximeters with the revised software returned similar saturation distributions. A characteristic of the software algorithm reduces the frequency of saturations of 87-90% and increases the frequency of higher values returned by the Masimo SET Radical pulse oximeter. This effect, which remains within the recommended standards for accuracy, is removed by installing revised software (board firmware V4.8 or higher). Because this observation is likely to influence oxygen targeting, it should be considered in the analysis of the oxygen trial results to maximise their generalisability.

Estimation of plasma ion saturation current and reduced tip arcing using Langmuir probe harmonics.

PubMed

Boedo, J A; Rudakov, D L

2017-03-01

We present a method to calculate the ion saturation current, I sat , for Langmuir probes at high frequency (>100 kHz) using the harmonics technique and we compare that to a direct measurement of I sat . It is noted that the I sat estimation can be made directly by the ratio of harmonic amplitudes, without explicitly calculating T e . We also demonstrate that since the probe tips using the harmonic method are oscillating near the floating potential, drawing little power, this method reduces tip heating and arcing and allows plasma density measurements at a plasma power flux that would cause continuously biased tips to arc. A multi-probe array is used, with two spatially separated tips employing the harmonics technique and measuring the amplitude of at least two harmonics per tip. A third tip, located between the other two, measures the ion saturation current directly. We compare the measured and calculated ion saturation currents for a variety of plasma conditions and demonstrate the validity of the technique and its use in reducing arcs.

Estimation of plasma ion saturation current and reduced tip arcing using Langmuir probe harmonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boedo, J. A.; Rudakov, D. L.

Here we present a method to calculate the ion saturation current, I sat, for Langmuir probes at high frequency (>100 kHz) using the harmonics technique and we compare that to a direct measurement of I sat. It is noted that the Isat estimation can be made directly by the ratio of harmonic amplitudes, without explicitly calculating T e. We also demonstrate that since the probe tips using the harmonic method are oscillating near the floating potential, drawing little power, this method reduces tip heating and arcing and allows plasma density measurements at a plasma power flux that would cause continuouslymore » biased tips to arc. A multi-probe array is used, with two spatially separated tips employing the harmonics technique and measuring the amplitude of at least two harmonics per tip. A third tip, located between the other two, measures the ion saturation current directly. We compare the measured and calculated ion saturation currents for a variety of plasma conditions and demonstrate the validity of the technique and it’s use in reducing arcs.« less

Estimation of plasma ion saturation current and reduced tip arcing using Langmuir probe harmonics

DOE PAGES

Boedo, J. A.; Rudakov, D. L.

2017-03-20

Here we present a method to calculate the ion saturation current, I sat, for Langmuir probes at high frequency (>100 kHz) using the harmonics technique and we compare that to a direct measurement of I sat. It is noted that the Isat estimation can be made directly by the ratio of harmonic amplitudes, without explicitly calculating T e. We also demonstrate that since the probe tips using the harmonic method are oscillating near the floating potential, drawing little power, this method reduces tip heating and arcing and allows plasma density measurements at a plasma power flux that would cause continuouslymore » biased tips to arc. A multi-probe array is used, with two spatially separated tips employing the harmonics technique and measuring the amplitude of at least two harmonics per tip. A third tip, located between the other two, measures the ion saturation current directly. We compare the measured and calculated ion saturation currents for a variety of plasma conditions and demonstrate the validity of the technique and it’s use in reducing arcs.« less

Streaming Potential In Rocks Saturated With Water And Oil

NASA Astrophysics Data System (ADS)

Tarvin, J. A.; Caston, A.

2011-12-01

Fluids flowing through porous media generate electrical currents. These currents cause electric potentials, called "streaming potentials." Streaming potential amplitude depends on the applied pressure gradient, on rock and fluid properties, and on the interaction between rock and fluid. Streaming potential has been measured for rocks saturated with water (1) and with water-gas mixtures. (2) Few measurements (3) have been reported for rocks saturated with water-oil mixtures. We measured streaming potential for sandstone and limestone saturated with a mixture of brine and laboratory oil. Cylindrical samples were initially saturated with brine and submerged in oil. Saturation was changed by pumping oil from one end of a sample to the other and then through the sample in the opposite direction. Saturation was estimated from sample resistivity. The final saturation of each sample was determined by heating the sample in a closed container and measuring the pressure. Measurements were made by modulating the pressure difference (of oil) between the ends of a sample at multiple frequencies below 20 Hz. The observed streaming potential is a weak function of the saturation. Since sample conductivity decreases with increasing oil saturation, the electro-kinetic coupling coefficient (Pride's L (4)) decreases with increasing oil saturation. (1) David B. Pengra and Po-zen Wong, Colloids and Surfaces, vol., p. 159 283-292 (1999). (2) Eve S. Sprunt, Tony B. Mercer, and Nizar F. Djabbarah, Geophysics, vol. 59, p. 707-711 (1994). (3) Vinogradov, J., Jackson, M.D., Geophysical Res. L., Vol. 38, Article L01301 (2011). (4) Steve Pride, Phys. Rev. B, vol. 50, pp. 15678-15696 (1994).

Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimatani, Masaaki; Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp; Fujisawa, Daisuke

2016-03-15

Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illumination in graphene-based phototransistors with n-doped Si substrates, but not those with p-doped substrates. The source-drain current and substrate current were investigated with and without illumination for both p-type and n-type Si substrates. The decay time of the drain-source current indicates that the Si substrate, SiO{sub 2} layer, and metal electrode comprise a metal-oxide-semiconductor (MOS) capacitor due tomore » the presence of defects at the interface between the Si substrate and SiO{sub 2} layer. The difference in the diffusion time of the intrinsic major carriers (electrons) and the photogenerated electron-hole pairs to the depletion layer delays the application of the gate voltage to the graphene channel. Therefore, the giant Dirac point shift is attributed to the n-type Si substrate current. This phenomenon can be exploited to realize high-performance graphene-based phototransistors.« less

A field effect glucose sensor with a nanostructured amorphous In-Ga-Zn-O network.

PubMed

Du, Xiaosong; Li, Yajuan; Herman, Gregory S

2016-11-03

Amorphous indium gallium zinc oxide (IGZO) field effect transistors (FETs) are a promising technology for a wide range of electronic applications. Herein, we fabricated and characterized FETs with a nanostructured IGZO network as a sensing transducer. The IGZO was patterned using colloidal lithography and electrohydrodynamic printing, where an 8 μm wide nanostructured close-packed hexagonal IGZO network was obtained. Electrical characterization of the nanostructured IGZO network FET demonstrated a drain-source current on-off ratio of 6.1 × 10 3 and effective electron mobilities of 3.6 cm 2 V -1 s -1 . The nanostructured IGZO network was functionalized by aminosilane groups with cross-linked glucose oxidase. The devices demonstrated a decrease in drain-source conductance and a more positive V ON with increasing glucose concentration. These changes are ascribed to the acceptor-like surface states associated with positively charged aminosilane groups attached to the nanostructured IGZO surface. Continuous monitoring of the drain-source current indicates a stepwise and fully reversible response to glucose concentrations with a short response time. The specific catalytic reaction between the GOx enzyme and glucose eliminates interference from acetaminophen/ascorbic acid. We demonstrate that nanostructured IGZO FETs have improved sensitivity compared to non-nanostructured IGZO for sensing glucose and can be potentially extended to other biosensor technologies.

A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

NASA Astrophysics Data System (ADS)

Raksharam; Dutta, Aloke K.

2017-04-01

In this paper, a unified analytical model for the drain current of a symmetric Double-Gate Junctionless Field-Effect Transistor (DG-JLFET) is presented. The operation of the device has been classified into four modes: subthreshold, semi-depleted, accumulation, and hybrid; with the main focus of this work being on the accumulation mode, which has not been dealt with in detail so far in the literature. A physics-based model, using a simplified one-dimensional approach, has been developed for this mode, and it has been successfully integrated with the model for the hybrid mode. It also includes the effect of carrier mobility degradation due to the transverse electric field, which was hitherto missing in the earlier models reported in the literature. The piece-wise models have been unified using suitable interpolation functions. In addition, the model includes two most important short-channel effects pertaining to DG-JLFETs, namely the Drain Induced Barrier Lowering (DIBL) and the Subthreshold Swing (SS) degradation. The model is completely analytical, and is thus computationally highly efficient. The results of our model have shown an excellent match with those obtained from TCAD simulations for both long- and short-channel devices, as well as with the experimental data reported in the literature.

Printable organic thin film transistors for glucose detection incorporating inkjet-printing of the enzyme recognition element

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elkington, D., E-mail: Daniel.Elkington@newcastle.edu.au; Wasson, M.; Belcher, W.

The effect of device architecture upon the response of printable enzymatic glucose sensors based on poly(3-hexythiophene) (P3HT) organic thin film transistors is presented. The change in drain current is used as the basis for glucose detection and we show that significant improvements in drain current response time can be achieved by modifying the design of the sensor structure. In particular, we show that eliminating the dielectric layer and reducing the thickness of the active layer reduce the device response time considerably. The results are in good agreement with a diffusion based model of device operation, where an initial rapid dedopingmore » process is followed by a slower doping of the P3HT layer from protons that are enzymatically generated by glucose oxidase (GOX) at the Nafion gate electrode. The fitted diffusion data are consistent with a P3HT doping region that is close to the source-drain electrodes rather than located at the P3HT:[Nafion:GOX] interface. Finally, we demonstrate that further improvements in sensor structure and morphology can be achieved by inkjet-printing the GOX layer, offering a pathway to low-cost printed biosensors for the detection of glucose in saliva.« less

Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection.

PubMed

Mirza, Misbah; Wang, Jiawei; Li, Dexing; Arabi, S Atika; Jiang, Chao

2014-04-23

We report on the fabrication of an organic field-effect transistor (OFET) of a monolayer pentacene thin film with top-contact electrodes for the aim of ammonia (NH3) gas detection by monitoring changes in its drain current. A top-contact configuration, in which source and drain electrodes on a flexible stamp [poly(dimethylsiloxane)] were directly contacted with the monolayer pentacene film, was applied to maintain pentacene arrangement ordering and enhance the monolayer OFET detection performance. After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity. This sensitivity enhancement to a limit of the 10 ppm level was attributed to an increase of charge trapping in the carrier channel, and the amount of trapped states was experimentally evaluated by the threshold voltage shift induced by the absorbed NH3 molecular analyte. In contrast, a conventional device with a 50-nm-thick pentacene layer displayed much higher mobility but lower response to NH3 gas, arising from the impediment of analyte penetrating into the conductive channel, owing to the thick pentacene film.

Drainage after Modified Radical Mastectomy – A Methodological Mini-Review

PubMed Central

Tsocheva, Dragostina; Marinova, Katerina; Dobrev, Emil; Nenkov, Rumen

2017-01-01

Breast cancer is a socially relevant group of malignant conditions of the mammary gland, affecting both males and females. Most commonly the surgical approach of choice is a modified radical mastectomy (MRM), due to it allowing for both the removal of the main tumor mass and adjacent glandular tissue, which are suspected of infiltration and multifocality of the process, and a sentinel axillary lymph node removal. Most common post-surgical complications following MRM are the formation of a hematoma, the infection of the surgical wound and the formation of a seroma. These post-surgical complications can, at least in part, be attributed to the drainage of the surgical wound. However, the lack of modern and official guidelines provides an ample scope for innovation, but also leads to a need for a randomized comparison of the results. We compared different approaches to wound drainage after MRM, reviewed based on the armamentarium, number of drains, location, type of drainage system, timing of drain removal and no drainage alternatives. Currently, based on the general results, scientific and comparative discussions, seemingly the most affordable methodology with the best patient outcome, with regards to hospital stay and post-operative complications, is the placement of one medial to lateral (pectoro-axillary) drain with low negative pressure. Ideally, the drain should be removed on the second or third postoperative day or when the amount of drained fluid in the last 24 hours reaches below 50 milliliters. PMID:28929038

Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions

NASA Technical Reports Server (NTRS)

Von Roos, O.; Mavromatis, H.

1984-01-01

The application of the radiative transfer theory for semiconductors to p-n homojunctions subject to low level injection conditions is discussed. By virtue of the interaction of the radiation field with free carriers across the depletion layer, the saturation current density in Shockley's expression for the diode current is reduced at high doping levels. The reduction, due to self-induced photon generation, is noticeable for n-type material owing to the small electron effective mass in direct band-gap III-V compounds. The effect is insignificant in p-type material. At an equilibrium electron concentration of 2 x 10 to the 18th/cu cm in GaAs, a reduction of the saturation current density by 15 percent is predicted. It is concluded that realistic GaAs p-n junctions possess a finite thickness.

Magnetic Field Saturation of the Ion Weibel Instability in Interpenetrating Relativistic Plasmas

NASA Astrophysics Data System (ADS)

Takamoto, Makoto; Matsumoto, Yosuke; Kato, Tsunehiko N.

2018-06-01

The time evolution and saturation of the Weibel instability at the ion Alfvén current are presented by ab initio particle-in-cell (PIC) simulations. We found that the ion Weibel current in three-dimensional (3D) simulations could evolve into the Alfvén current where the magnetic field energy is sustained at 1.5% of the initial beam kinetic energy. The current filaments are no longer isolated at saturation, but rather connected to each other to form a network structure. Electrons are continuously heated during the coalescence of the filaments, which is crucial for obtaining sustained magnetic fields with much stronger levels than with two-dimensional (2D) simulations. The results highlight again the importance of the Weibel instability in generating magnetic fields in laboratory, astrophysical, and cosmological situations.

High-power microstrip switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1974-01-01

Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.

Water related triggering mechanisms of shallow landslides: Numerical modelling of hydraulic flows in slopes verified with field experiments

NASA Astrophysics Data System (ADS)

Broennimann, C.; Tacher, L.

2009-04-01

To assess hill slope stability and landslide triggering mechanisms, it is essential to understand the hydrogeological regime in slopes. In this work finite element models are elaborated and field experiments are carried out to study particularly shallow landslides with thickness of a few meters. The basis hypothesis of the presented research assumes that even for shallow landslides the hydrogeological role of the substratum, mostly bedrock, is determinant for the slopes behaviour, either it is draining or feeding the overlaying unstable mass. The investigated area of about 1 square kilometre is situated next to the villages Buchberg and Rüdlingen (canton Schaffhausen, Switzerland) at the border of the river Rhine. The lithology in this region is characterized mainly by horizontally layered sandstones intersected by marls from the upper seawater and the lower freshwater molasse, overlaid by soil and weathered bedrock of about 1 to 4 m thickness, both classified as silty sands. With a slope inclination of locally up to 40° the area is rather steep and characterized by continuous regressive erosion processes. During heavy rainfall events, such as the one from May 2002, shallow landslides occurred in the area affecting afforested soils as well as woodless areas. Geological field observations, infiltration and tracer tests show a fairly complicated hydrogeological character of the region. Along the slope, in the first few meters of depth, no groundwater table was found. However, seasonally controlled sources can be observed in-between outcropping bedrock. Within the sandstone, vertical faults in decametre scale oriented parallel to the Rhine that most likely opened during decompression due to the cutting of the river affect locally the hydrogeological regime by draining the slope. This implies a high grade of heterogeneity in the water flows in a local scale. Based on these conceptual hydrological and geological models, a numerical flow model was obtained using finite element software. Different scenarios of groundwater flow pattern and hydraulic head distribution in the saturated and unsaturated zones were modelled considering transient hydraulic conditions. The hydraulic pressure boundary conditions can then be introduced in a geomechanical model in order to evaluate mass movements and to estimate the soil stability. In a next step, a 10 x 30 m large test side situated inside the above mentioned study area was chosen to investigate the slopes behaviour during a triggering field experiment carried out in October 2008. With the aim to provoke a shallow landslide the test site with a mean inclination of 35° was intensely irrigated with sprinklers during 5 days (20 - 30 mm/hr). Transient soil parameters such as suction, pore water pressure and saturation at different depth, water infiltration rate, ground water table and soil movements in a mm-scale were measured. During this first field experiment, the slope remained stable. At this state the results of experiment and models suggest that: - At the experiment scale, heavy rainfall is not sufficient to trigger a mass movement if the hydrogeological conditions inside the substratum (bedrock) are not in a critical state as well. During the experiment, the bedrock was not saturated and played a draining role. - The behaviour of the local area, at the experiment scale, must be modelled within a regional scale (e.g. kilometric) to consider the role of hydraulic pressures inside the bedrock. The results obtained from the experiment will be used to refine the numeric models and to design future field experiments.

Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors

NASA Astrophysics Data System (ADS)

Kim, Sang Min; Cho, Won Ju; Yu, Chong Gun; Park, Jong Tae

2018-04-01

In this work, the lifetime prediction models of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were suggested for the application of display device and BEOL (Back End Of line) transistors with embedded a-IGZO TFTs. Four different types of test devices according to the active layer thickness, source/drain electrode materials and thermal treatments have been used to verify the suggested model. The device lifetimes under high gate bias stress and hot carrier stress were extracted through fittings of the stretched-exponential equation for threshold voltage shifts and the current estimation method for drain current degradations. Our suggested lifetime prediction models could be used in any kinds of structures of a-IGZO TFTs for the application of display device and BEOL transistors. The a-IGZO TFTs with embedded ITO local conducting layer under source/drain is better for BEOL transistor application and a-IGZO TFTs with InGaZnO thin film as source/drain electrodes may be better for the application of display devices. From 1983 to 1985, he was a Researcher at Gold-Star Semiconductor, Inc., Korea, where he worked on the development of SRAM. He joined the Department of Electronics Engineering, University of Incheon, Incheon, Korea, in 1987, where he is a Professor. As a visiting scientist at Massachusetts Institute of Technology, Cambridge, in 1991, he conducted research in hot carrier reliability of CMOS. As a visiting scholar at University of California, Davis, in 2001, he conducted research on the device structure of Nano-scale SOI CMOS. His recent interests are device structure and reliability of Nano-scale CMOS devices, flash memory, and thin film transistors.

Quantifying the water storage volume of major aquifers in the US

NASA Astrophysics Data System (ADS)

Jame, S. A.; Bowling, L. C.

2017-12-01

Groundwater is one of our most valuable natural resources which affects not only the food and energy nexus, but ecosystem and human health, through the availability of drinking water. Quantification of current groundwater storage is not only required to better understand groundwater flow and its role in the hydrologic cycle, but also sustainable use. In this study, a new high resolution map (5' minutes) of groundwater properties is created for US major aquifers to provide an estimate of total groundwater storage. The estimation was done using information on the spatial extent of the principal aquifers of the US from the USGS Groundwater Atlas, the average porosity of different hydrolithologic groups and the current saturated thickness of each aquifer. Saturated thickness varies within aquifers, and has been calculated by superimposing current water-table contour maps over the base aquifer altitude provided by USGS. The average saturated thickness has been computed by interpolating available data on saturated thickness for an aquifer using the kriging method. Total storage of aquifers in each cell was then calculated by multiplying the spatial extent, porosity, and thickness of the saturated layer. The resulting aquifer storage estimates was compared with current groundwater withdrawal rates to produce an estimate of how many years' worth of water are stored in the aquifers. The resulting storage map will serve as a national dataset for stakeholders to make decisions for sustainable use of groundwater.

The effects of capillary forces on the axisymmetric propagation of two-phase, constant-flux gravity currents in porous media

NASA Astrophysics Data System (ADS)

Golding, Madeleine J.; Huppert, Herbert E.; Neufeld, Jerome A.

2013-03-01

The effects of capillary forces on the propagation of two-phase, constant-flux gravity currents in a porous medium are studied analytically and numerically in an axisymmetric geometry. The fluid within a two-phase current generally only partially saturates the pore space it invades. For long, thin currents, the saturation distribution is set by the vertical balance between gravitational and capillary forces. The capillary pressure and relative permeability of the fluid in the current depend on this saturation. The action of capillary forces reduces the average saturation, thereby decreasing the relative permeability throughout the current. This results in a thicker current, which provides a steeper gradient to drive flow, and a more blunt-nose profile. The relative strength of gravity and capillary forces remains constant within a two-phase gravity current fed by a constant flux and spreading radially, due to mass conservation. For this reason, we use an axisymmetric representation of the framework developed by Golding et al. ["Two-phase gravity currents in porous media," J. Fluid Mech. 678, 248-270 (2011)], 10.1017/jfm.2011.110, to investigate the effect on propagation of varying the magnitude of capillary forces and the pore-size distribution. Scaling analysis indicates that axisymmetric two-phase gravity currents fed by a constant flux propagate like t1/2, similar to their single-phase counterparts [S. Lyle, H. E. Huppert, M. Hallworth, M. Bickle, and A. Chadwick, "Axisymmetric gravity currents in a porous medium," J. Fluid Mech. 543, 293-302 (2005)], 10.1017/S0022112005006713, with the effects of capillary forces encapsulated in the constant of proportionality. As a practical application of our new concepts and quantitative evaluations, we discuss the implications of our results for the process of carbon dioxide (CO2) sequestration, during which gravity currents consisting of supercritical CO2 propagate in rock saturated with aqueous brine. We apply our two-phase model including capillary forces to quantitatively assess seismic images of CO2 spreading at Sleipner underneath the North Sea.

M-I-S solar cell - Theory and experimental results

NASA Technical Reports Server (NTRS)

Childs, R.; Fortuna, J.; Geneczko, J.; Fonash, S. J.

1976-01-01

The paper presents an operating-mode analysis of an MIS solar cell and discusses the advantages which can arise as a result of the use of transport control, field shaping (increased n factor), and zero bias barrier height modification. It is noted that for an n-type semiconductor, it is relatively easy to obtain an enhanced n factor using acceptor-like states without an increase in diode saturation current, the converse being true for p-type semiconductors. Several MIS configurations are examined: an acceptor-like, localized state configuration producing field shaping and no change in diode saturation current, and acceptor-like localized configurations producing field shaping, with a decrease of diode saturation current, in one case, and an increase in the other.

Skyrmion based universal memory operated by electric current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zang, Jiadong; Chien, Chia-Ling; Li, Yufan

2017-09-26

A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

Randomized Controlled Trial to Reduce Bacterial Colonization of Surgical Drains After Breast and Axillary Operations

PubMed Central

Degnim, Amy C.; Scow, Jeffrey S.; Hoskin, Tanya L.; Miller, Joyce P.; Loprinzi, Margie; Boughey, Judy C.; Jakub, James W.; Throckmorton, Alyssa; Patel, Robin; Baddour, Larry M.

2014-01-01

Objective To determine if bacterial colonization of drains can be reduced by local antiseptic interventions. Summary Background Drains are a potential source of bacterial entry into surgical wounds and may contribute to surgical site infection (SSI) after breast surgery. Methods Following IRB approval, patients undergoing total mastectomy and/or axillary lymph node dissection were randomized to standard drain care (control) or drain antisepsis (treated). Standard drain care comprised twice daily cleansing with alcohol swabs. Antisepsis drain care included 1) a chlorhexidine disc at the drain exit site and 2) irrigation of the drain bulb twice daily with dilute sodium hypochlorite (Dakin’s) solution. Cultures results of drain fluid and tubing were compared between control and antisepsis groups. Results Overall, 100 patients with 125 drains completed the study with 48 patients (58 drains) in the control group and 52 patients (67 drains) in the antisepsis group. Cultures of drain bulb fluid at one week were positive (1+ or greater growth) in 66% (38/58) of control drains compared to 21% of antisepsis drains (14/67), (p=0.0001). Drain tubing cultures demonstrated >50 CFU in 19% (8/43) of control drains versus 0% (0/53) of treated drains (p=0.004). SSI was diagnosed in 6 patients (6%) - 5 patients in the control group and 1 patient in the antisepsis group (p=0.06). Conclusions Simple and inexpensive local antiseptic interventions with a chlorhexidine disc and hypochlorite solution reduce bacterial colonization of drains. Based on these data, further study of drain antisepsis and its potential impact on SSI rate is warranted. PMID:23518704

Elastic Dispersion and Attenuation in Fully Saturated Sandstones: Role of Mineral Content, Porosity, and Pressures

NASA Astrophysics Data System (ADS)

Pimienta, Lucas; Borgomano, Jan V. M.; Fortin, Jérôme; Guéguen, Yves

2017-12-01

Because measuring the frequency dependence of elastic properties in the laboratory is a technical challenge, not enough experimental data exist to test the existing theories. We report measurements of three fluid-saturated sandstones over a broad frequency band: Wilkenson, Berea, and Bentheim sandstones. Those sandstones samples, chosen for their variable porosities and mineral content, are saturated by fluids of varying viscosities. The samples elastic response (Young's modulus and Poisson's ratio) and hydraulic response (fluid flow out of the sample) are measured as a function of frequency. Large dispersion and attenuation phenomena are observed over the investigated frequency range. For all samples, the variation at lowest frequency relates to a large fluid flow directly measured out of the rock samples. These are the cause (i.e., fluid flow) and consequence (i.e., dispersion/attenuation) of the transition between drained and undrained regimes. Consistently, the characteristic frequency correlates with permeability for each sandstone. Beyond this frequency, a second variation is observed for all samples, but the rocks behave differently. For Berea sandstone, an onset of dispersion/attenuation is expected from both Young's modulus and Poisson's ratio at highest frequency. For Bentheim and Wilkenson sandstones, however, only Young's modulus shows dispersion/attenuation phenomena. For Wilkenson sandstone, the viscoelastic-like dispersion/attenuation response is interpreted as squirt flow. For Bentheim sandstone, the second effect does not fully follow such response, which could be due to a lower accuracy in the measured attenuation or to the occurence of another physical effect in this rock sample.

Water Saturation Relations and Their Diffusion-Limited Equilibration in Gas Shale: Implications for Gas Flow in Unconventional Reservoirs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tokunaga, Tetsu K.; Shen, Weijun; Wan, Jiamin

Large volumes of water are used for hydraulic fracturing of low permeability shale reservoirs to stimulate gas production, with most of the water remaining unrecovered and distributed in a poorly understood manner within stimulated regions. Because water partitioning into shale pores controls gas release, we measured the water saturation dependence on relative humidity (rh) and capillary pressure (P c) for imbibition (adsorption) as well as drainage (desorption) on samples of Woodford Shale. Experiments and modeling of water vapor adsorption into shale laminae at rh = 0.31 demonstrated that long times are needed to characterize equilibrium in larger (5 mm thick)more » pieces of shales, and yielded effective diffusion coefficients from 9 × 10 -9 to 3 × 10 -8 m 2 s -1, similar in magnitude to the literature values for typical low porosity and low permeability rocks. Most of the experiments, conducted at 50°C on crushed shale grains in order to facilitate rapid equilibration, showed significant saturation hysteresis, and that very large P c (~1 MPa) are required to drain the shales. These results quantify the severity of the water blocking problem, and suggest that gas production from unconventional reservoirs is largely associated with stimulated regions that have had little or no exposure to injected water. Finally, gravity drainage of water from fractures residing above horizontal wells reconciles gas production in the presence of largely unrecovered injected water, and is discussed in the broader context of unsaturated flow in fractures.« less

Water Saturation Relations and Their Diffusion-Limited Equilibration in Gas Shale: Implications for Gas Flow in Unconventional Reservoirs

DOE PAGES

Tokunaga, Tetsu K.; Shen, Weijun; Wan, Jiamin; ...

2017-11-15

Large volumes of water are used for hydraulic fracturing of low permeability shale reservoirs to stimulate gas production, with most of the water remaining unrecovered and distributed in a poorly understood manner within stimulated regions. Because water partitioning into shale pores controls gas release, we measured the water saturation dependence on relative humidity (rh) and capillary pressure (P c) for imbibition (adsorption) as well as drainage (desorption) on samples of Woodford Shale. Experiments and modeling of water vapor adsorption into shale laminae at rh = 0.31 demonstrated that long times are needed to characterize equilibrium in larger (5 mm thick)more » pieces of shales, and yielded effective diffusion coefficients from 9 × 10 -9 to 3 × 10 -8 m 2 s -1, similar in magnitude to the literature values for typical low porosity and low permeability rocks. Most of the experiments, conducted at 50°C on crushed shale grains in order to facilitate rapid equilibration, showed significant saturation hysteresis, and that very large P c (~1 MPa) are required to drain the shales. These results quantify the severity of the water blocking problem, and suggest that gas production from unconventional reservoirs is largely associated with stimulated regions that have had little or no exposure to injected water. Finally, gravity drainage of water from fractures residing above horizontal wells reconciles gas production in the presence of largely unrecovered injected water, and is discussed in the broader context of unsaturated flow in fractures.« less

Hydrological and geochemical processes constraining groundwater salinity in wetland areas related to evaporitic (karst) systems. A case study from Southern Spain

NASA Astrophysics Data System (ADS)

Gil-Márquez, J. M.; Barberá, J. A.; Andreo, B.; Mudarra, M.

2017-01-01

Chemical and isotopic evolution of groundwater in an evaporite karst plateau (including wetland areas and saline to hyper-saline springs) located at S Spain was studied. Physicochemical parameters, major ions and stable isotopes were analyzed in rain, brine spring, wetland and leakage water samples, from which the most common mineral saturation indexes were computed and geochemical and isotopic modelling were performed. Results show an apparent relationship between the elevation of brine springs and their water mineralization, indicating that drainage at higher altitude may be associated to gravity-driven flows, since brackish groundwater is isotopically fractionated due to evaporation. On the other hand, the lower altitude springs could drain deeper flows with longer residence time, resulting in highly mineralized and warmer (briny) groundwater. The dissolution of halite and gypsum has proved to be the main geochemical processes, which are favored by the great ionic strength of groundwater. Calcite precipitation occurs in brackish waters draining wetlands, being boosted by common ion effect (when CaSO4 waters are present) and solute concentration caused by evaporation. Modelling results strongly support the hypothesis that most of the selected springs geochemically evolve in a common (S-N) flowpath. The methods used in this research contribute to a better understanding of the hydrogeological processes occurring in the studied evaporitic system, but also in equivalent hydrological environments worldwide.

Memory characteristics of ring-shaped ceramic superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeoka, A.; Hasunuma, M.; Sakaiya, S.

1989-03-01

For the practical application of ceramic superconductors, the authors investigated the residual magnetic field characteristics of ring-shaped ceramic superconductors in a Y-Ba-Cu-O system with high Tc. The residual magnetic field of a ring with asymmetric current paths, supplied by external currents, appeared when one of the branch currents was above the critical current. The residual magnetic field saturated when both brach currents exceeded the critical current of the ring and showed hysteresis-like characteristics. The saturated magnetic field is subject to the critical current of the ring. A superconducting ring with asymmetric current paths suggests a simple and quite new persistent-currentmore » type memory device.« less

A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

NASA Astrophysics Data System (ADS)

Cai, M. X.; Yao, R. H.

2018-03-01

Temperature dependent electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are investigated considering the percolation and multiple trapping and release (MTR) conduction mechanisms. Carrier-density and temperature dependent carrier mobility in a-IGZO is derived with the Boltzmann transport equation, which is affected by potential barriers above the conduction band edge with Gaussian-like distributions. The free and trapped charge densities in the channel are calculated with Fermi-Dirac statistics, and the field effective mobility of a-IGZO TFTs is then deduced based on the MTR theory. Temperature dependent drain current model for a-IGZO TFTs is finally derived with the obtained low field mobility and free charge density, which is applicable to both non-degenerate and degenerate conductions. This physical-based model is verified by available experiment results at various temperatures.

An AlN/Al 0.85Ga 0.15N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-22

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85Ga 0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on/I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion,more » the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.« less

An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-18

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminalmore » off-state drain current was adequately modeled with Frenkel-Poole emission.« less

A novel high-performance high-frequency SOI MESFET by the damped electric field

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Khayatian, Ahmad; Keshavarzi, Parviz

2016-06-01

In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate-drain and gate-source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

I-V Characteristics of a Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

Cage-rotor induction motor inter-turn short circuit fault detection with and without saturation effect by MEC model.

PubMed

Naderi, Peyman

2016-09-01

The inter-turn short fault for the Cage-Rotor-Induction-Machine (CRIM) is studied in this paper and its local saturation is taken into account. However, in order to observe the exact behavior of machine, the Magnetic-Equivalent-Circuit (MEC) and nonlinear B-H curve are proposed to provide an insight into the machine model and saturation effect respectively. The electrical machines are generally operated near to their saturation zone due to some design necessities. Hence, when the machine is exposed to a fault such as short circuit or eccentricities, it is operated within its saturation zone and thus, time and space harmonics are integrated and as a result, current and torque harmonics are generated which the phenomenon cannot be explored when saturation is dismissed. Nonetheless, inter-turn short circuit may lead to local saturation and this occurrence is studied in this paper using MEC model. In order to achieve the mentioned objectives, two and also four-pole machines are modeled as two samples and the machines performances are analyzed in healthy and faulty cases with and without saturation effect. A novel strategy is proposed to precisely detect inter-turn short circuit fault according to the stator׳s lines current signatures and the accuracy of the proposed method is verified by experimental results. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Relations between macropore network characteristics and the degree of preferential solute transport

NASA Astrophysics Data System (ADS)

Larsbo, M.; Koestel, J.; Jarvis, N.

2014-12-01

The characteristics of the soil macropore network determine the potential for fast transport of agrochemicals and contaminants through the soil. The objective of this study was to examine the relationships between macropore network characteristics, hydraulic properties and state variables and measures of preferential transport. Experiments were carried out under near-saturated conditions on undisturbed columns sampled from four agricultural topsoils of contrasting texture and structure. Macropore network characteristics were computed from 3-D X-ray tomography images of the soil pore system. Non-reactive solute transport experiments were carried out at five steady-state water flow rates from 2 to 12 mm h-1. The degree of preferential transport was evaluated by the normalised 5% solute arrival time and the apparent dispersivity calculated from the resulting breakthrough curves. Near-saturated hydraulic conductivities were measured on the same samples using a tension disc infiltrometer placed on top of the columns. Results showed that many of the macropore network characteristics were inter-correlated. For example, large macroporosities were associated with larger specific macropore surface areas and better local connectivity of the macropore network. Generally, an increased flow rate resulted in earlier solute breakthrough and a shifting of the arrival of peak concentration towards smaller drained volumes. Columns with smaller macroporosities, poorer local connectivity of the macropore network and smaller near-saturated hydraulic conductivities exhibited a greater degree of preferential transport. This can be explained by the fact that, with only two exceptions, global (i.e. sample scale) continuity of the macropore network was still preserved at low macroporosities. Thus, for any given flow rate, pores of larger diameter were actively conducting solute in soils of smaller near-saturated hydraulic conductivity. This was associated with larger local transport velocities and, hence, less time for equilibration between the macropores and the surrounding matrix which made the transport more preferential. Conversely, the large specific macropore surface area and well-connected macropore networks associated with columns with large macroporosities limit the degree of preferential transport because they increase the diffusive flux between macropores and the soil matrix and they increase the near-saturated hydraulic conductivity. The normalised 5% arrival times were most strongly correlated with the estimated hydraulic state variables (e.g. with the degree of saturation in the macropores R2 = 0.589), since these combine into one measure the effects of irrigation rate and the near-saturated hydraulic conductivity function, which in turn implicitly depends on the volume, size distribution, global continuity, local connectivity and tortuosity of the macropore network.

Reliability of Near-Infrared Spectroscopy for Determining Muscle Oxygen Saturation during Exercise

ERIC Educational Resources Information Center

Austin, Krista G.; Daigle, Karen A.; Patterson, Patricia; Cowman, Jason; Chelland, Sara; Haymes, Emily M.

2005-01-01

Near-infrared spectroscopy is currently used to assess changes in the oxygen saturation of the muscle during exercise. The primary purpose of this study was to assess the reliability of near-infrared spectroscopy in determining muscle oxygen saturation (StO[subscript 2]) in the vastus lateralis during cycling and the gastrocnemius during running…

Analog-model analysis of effect of wastewater management on the ground-water reservoir in Nassau and Suffolk Counties, New York: Report I: Proposed and current sewerage

USGS Publications Warehouse

Kimmel, Grant E.; Harbaugh, Arlen W.

1976-01-01

By 1995, the water table may fall by as much as 5 metres (16 feet) in east-central Nassau County and as much as 1.8 metres (6 feet) in central Suffolk County as a result of proposed sewerage programs. similar, but generally slightly less, change may occur in the potentiometric head in the Magothy aquifer. Streamflow may decrease by as much as 55 percent in streams draining from Nassau County Sewage Disposal District 3 and as much as 56 percent in streams draining from the Huntington-Northport Sewer District.

Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment

NASA Astrophysics Data System (ADS)

Jang, Hun; Lee, Su Jeong; Porte, Yoann; Myoung, Jae-Min

2018-03-01

In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 × 106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 × 1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 × 108.

Position-dependent performance of copper phthalocyanine based field-effect transistors by gold nanoparticles modification.

PubMed

Luo, Xiao; Li, Yao; Lv, Wenli; Zhao, Feiyu; Sun, Lei; Peng, Yingquan; Wen, Zhanwei; Zhong, Junkang; Zhang, Jianping

2015-01-21

A facile fabrication and characteristics of copper phthalocyanine (CuPc)-based organic field-effect transistor (OFET) using the gold nanoparticles (Au NPs) modification is reported, thereby achieving highly improved performance. The effect of Au NPs located at three different positions, that is, at the SiO2/CuPc interface (device B), embedding in the middle of CuPc layer (device C), and on the top of CuPc layer (device D), is investigated, and the results show that device D has the best performance. Compared with the device without Au NPs (reference device A), device D displays an improvement of field-effect mobility (μ(sat)) from 1.65 × 10(-3) to 5.51 × 10(-3) cm(2) V(-1) s(-1), and threshold voltage decreases from -23.24 to -16.12 V. Therefore, a strategy for the performance improvement of the CuPc-based OFET with large field-effect mobility and saturation drain current is developed, on the basis of the concept of nanoscale Au modification. The model of an additional electron transport channel formation by FET operation at the Au NPs/CuPc interface is therefore proposed to explain the observed performance improvement. Optimum CuPc thickness is confirmed to be about 50 nm in the present study. The device-to-device uniformity and time stability are discussed for future application.

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2016-09-21

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Using Arc/Info GIS to help implement the National Pollutant Discharge Elimination System (NPDES) stormwater permit for Los Angeles County

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levine, D.A.; Pace, P.J.; Woods, J.A.

1997-06-01

One of Los Angeles County Department of Public Works` many responsibilities is to manage non-point pollution that enters the storm drain network within Los Angeles County. The management of this non-point source pollution is mandated by the NPDES guidelines under the Federal Clean Water Act. These guidelines require the County to monitor the drainage network and the storm water and urban runoff flowing through it. The County covers over 3,117 square miles, with the NPDES Permit covering over 3,100 square miles and over 2500 miles of storm drains. A proposed solution to monitor and manage this vast geographic area ismore » centered upon an Arc/Info GIS. Some of the many concerns which need to be addressed include the administration and evaluation of Best Management Practices (BMP`s), storm drain inspection for illegal connections and illicit discharges, and pollutant load assessment and modeling. The storm drain network and other coverages will be related to external data bases currently used for facility management and planning. This system would be used for query purposes to perform spatial modeling and {open_quotes}what if{close_quotes} scenarios needed to create maps and reports required by the permit and to evaluate various BMP implementation strategies.« less

Chest tube drainage of pleural effusions--an audit of current practice and complications at Hutt Hospital.

PubMed

Epstein, Erica; Jayathissa, Sisira; Dee, Stephen

2012-05-11

The aims of the study were to review small-bore chest tube insertion practices for drainage of pleural fluid at Hutt Valley District Health Board (HVDHB), to assess complications, and compare the findings with international data. Retrospective analysis of clinical records was completed on all chest tube insertions for drainage of pleural fluid at HVDHB from December 2008 to November 2009. Descriptive statistics were used to present demographics and tube-associated complications. Comparison was made to available similar international data. Small-bore tubes comprised 59/65 (91%) chest tube insertions and 23/25 (92%) complications. Available comparative data was limited. Ultrasound was used in 36% of insertions. Nearly half of chest drains placed for empyema required subsequent cardiothoracic surgical intervention. Chest drain complication rates at HVDHB were comparable to those seen internationally. Referral rates to cardiothoracic surgery for empyema were within described ranges. The importance of procedural training for junior medical staff, optimising safety of drain insertions with ultrasound guidance, and clear clinical governance for chest tube insertions are important in minimising harm from this procedure. Specialist societies need to take a leadership in providing guidance on chest drain insertions to secondary and tertiary hospitals in Australia and New Zealand.

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

2013-02-01

This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

GaN transistors on Si for switching and high-frequency applications

NASA Astrophysics Data System (ADS)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Composite fibrous glaucoma drainage implant

NASA Astrophysics Data System (ADS)

Klapstova, A.; Horakova, J.; Shynkarenko, A.; Lukas, D.

2017-10-01

Glaucoma is a frequent reason of loss vision. It is usually caused by increased intraocular pressure leading to damage of optic nerve head. This work deals with the development of fibrous structure suitable for glaucoma drainage implants (GDI). Commercially produced metallic glaucoma implants are very effective in lowering intraocular pressure. However, these implants may cause adverse events such as damage to adjacent tissue, fibrosis, hypotony or many others [1]. The aim of this study is to reduce undesirable properties of currently produced drains and improve their properties by creating of the composite fibrous drain for achieve a normal intraocular pressure. Two types of electrospinning technologies were used for the production of very small tubular implants. First type was focused for production of outer part of tubular drain and the second type of electrospinning method made the inner part of shape follows the connections of both parts. Complete implant had a special properties suitable for drainage of fluid. Morphological parameters, liquid transport tests and in-vitro cell adhesion tests were detected.

Community-based environmental management for malaria control: evidence from a small-scale intervention in Dar es Salaam, Tanzania.

PubMed

Castro, Marcia C; Tsuruta, Atsuko; Kanamori, Shogo; Kannady, Khadija; Mkude, Sixbert

2009-04-08

Historically, environmental management has brought important achievements in malaria control and overall improvements of health conditions. Currently, however, implementation is often considered not to be cost-effective. A community-based environmental management for malaria control was conducted in Dar es Salaam between 2005 and 2007. After community sensitization, two drains were cleaned followed by maintenance. This paper assessed the impact of the intervention on community awareness, prevalence of malaria infection, and Anopheles larval presence in drains. A survey was conducted in neighbourhoods adjacent to cleaned drains; for comparison, neighbourhoods adjacent to two drains treated with larvicides and two drains under no intervention were also surveyed. Data routinely collected by the Urban Malaria Control Programme were also used. Diverse impacts were evaluated through comparison of means, odds ratios (OR), logistic regression, and time trends calculated by moving averages. Individual awareness of health risks and intervention goals were significantly higher among sensitized neighbourhoods. A reduction in the odds of malaria infection during the post-cleaning period in intervention neighbourhoods was observed when compared to the pre-cleaning period (OR = 0.12, 95% CI 0.05-0.3, p < 0.001). During the post-cleaning period, a higher risk of infection (OR = 1.7, 95% CI 1.1-2.4, p = 0.0069) was observed in neighbourhoods under no intervention compared to intervention ones. Eighteen months after the initial cleaning, one of the drains was still clean due to continued maintenance efforts (it contained no waste materials and the water was flowing at normal velocity). A three-month moving average of the percentage of water habitats in that drain containing pupae and/or Anopheles larvae indicated a decline in larval density. In the other drain, lack of proper resources and local commitment limited success. Although environmental management was historically coordinated by authoritarian/colonial regimes or by industries/corporations, its successful implementation as part of an integrated vector management framework for malaria control under democratic governments can be possible if four conditions are observed: political will and commitment, community sensitization and participation, provision of financial resources for initial cleaning and structural repairs, and inter-sectoral collaboration. Such effort not only is expected to reduce malaria transmission, but has the potential to empower communities, improve health and environmental conditions, and ultimately contribute to poverty alleviation and sustainable development.

Current Saturation Avoidance with Real-Time Control using DPCS

NASA Astrophysics Data System (ADS)

Ferrara, M.; Hutchinson, I.; Wolfe, S.; Stillerman, J.; Fredian, T.

2008-11-01

Tokamak ohmic-transformer and equilibrium-field coils need to be able to operate near their maximum current capabilities. However if they reach their upper limit during high-performance discharges or in the presence of a strong off-normal event, shape control is compromised, and instability, even plasma disruptions can result. On Alcator C-Mod we designed and tested an anti-saturation routine which detects the impending saturation of OH and EF currents and interpolates to a neighboring safe equilibrium in real-time. The routine was implemented with a multi-processor, multi-time-scale control scheme, which is based on a master process and multiple asynchronous slave processes. The scheme is general and can be used for any computationally-intensive algorithm. USDoE award DE- FC02-99ER545512.

Spatial variability of herbicide mobilisation and transport at catchment scale: insights from a field experiment

NASA Astrophysics Data System (ADS)

Doppler, T.; Camenzuli, L.; Hirzel, G.; Krauss, M.; Lück, A.; Stamm, C.

2012-07-01

During rain events, herbicides can be transported from their point of application to surface waters, where they may harm aquatic organisms. Since the spatial pattern of mobilisation and transport is heterogeneous, the contributions of different fields to the herbicide load in the stream may vary considerably within one catchment. Therefore, the prediction of contributing areas could help to target mitigation measures efficiently to those locations where they reduce herbicide pollution the most. Such spatial predictions require sufficient insight into the underlying transport processes. To improve the understanding of the process chain of herbicide mobilisation on the field and the subsequent transport through the catchment to the stream, we performed a controlled herbicide application on corn fields in a small agricultural catchment (ca. 1 km2) with intensive crop production in the Swiss Plateau. Water samples were collected at different locations in the catchment (overland flow, tile drains and open channel) for two months after application in 2009, with a high temporal resolution during rain events. We also analysed soil samples from the experimental fields and measured discharge, groundwater level, soil moisture and the occurrence of overland flow at several locations. Several rain events with varying intensities and magnitudes occurred during the study period. Overland flow and erosion were frequently observed in the entire catchment. Infiltration excess and saturation excess overland flow were both observed. However, the main herbicide loss event was dominated by infiltration excess. Despite the frequent and wide-spread occurrence of overland flow, most of this water did not reach the channel directly, but was retained in small depressions in the catchment. From there, it reached the stream via macropores and tile drains. Manholes of the drainage system and storm drains for road and farmyard runoff acted as additional shortcuts to the stream. Although fast flow processes such as overland and macropore flow reduce the influence of the herbicide's chemical properties on transport due to short travel times, sorption properties influenced the herbicide transfer from ponding overland flow to tile drains (macropore flow). However, no influence of sorption was observed during the mobilisation of the herbicides from soil to overland flow. These observations on the role of herbicide properties contradict previous findings to some degree. Furthermore, they demonstrate that valuable insight can be gained by making spatially detailed observations along the flow paths.

Validating a spatially distributed hydrological model with soil morphology data

NASA Astrophysics Data System (ADS)

Doppler, T.; Honti, M.; Zihlmann, U.; Weisskopf, P.; Stamm, C.

2013-10-01

Spatially distributed hydrological models are popular tools in hydrology and they are claimed to be useful to support management decisions. Despite the high spatial resolution of the computed variables, calibration and validation is often carried out only on discharge time-series at specific locations due to the lack of spatially distributed reference data. Because of this restriction, the predictive power of these models, with regard to predicted spatial patterns, can usually not be judged. An example of spatial predictions in hydrology is the prediction of saturated areas in agricultural catchments. These areas can be important source areas for the transport of agrochemicals to the stream. We set up a spatially distributed model to predict saturated areas in a 1.2 km2 catchment in Switzerland with moderate topography. Around 40% of the catchment area are artificially drained. We measured weather data, discharge and groundwater levels in 11 piezometers for 1.5 yr. For broadening the spatially distributed data sets that can be used for model calibration and validation, we translated soil morphological data available from soil maps into an estimate of the duration of soil saturation in the soil horizons. We used redox-morphology signs for these estimates. This resulted in a data set with high spatial coverage on which the model predictions were validated. In general, these saturation estimates corresponded well to the measured groundwater levels. We worked with a model that would be applicable for management decisions because of its fast calculation speed and rather low data requirements. We simultaneously calibrated the model to the groundwater levels in the piezometers and discharge. The model was able to reproduce the general hydrological behavior of the catchment in terms of discharge and absolute groundwater levels. However, the accuracy of the groundwater level predictions was not high enough to be used for the prediction of saturated areas. The groundwater level dynamics were not adequately reproduced and the predicted spatial patterns of soil saturation did not correspond to the patterns estimated from the soil map. Our results indicate that an accurate prediction of the groundwater level dynamics of the shallow groundwater in our catchment that is subject to artificial drainage would require a more complex model. Especially high spatial resolution and very detailed process representations at the boundary between the unsaturated and the saturated zone are expected to be crucial. The data needed for such a detailed model are not generally available. The high computational demand and the complex model setup would require more resources than the direct identification of saturated areas in the field. This severely hampers the practical use of such models despite their usefulness for scientific purposes.

Advanced p-MOSFET Ionizing-Radiation Dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.

1994-01-01

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

Modes of supraglacial lake drainage and dynamic ice sheet response

NASA Astrophysics Data System (ADS)

Das, S. B.; Behn, M. D.; Joughin, I. R.

2011-12-01

We investigate modes of supraglacial lake drainage using geophysical, ground, and remote sensing observations over the western margin of the Greenland ice sheet. Lakes exhibit a characteristic life cycle defined by a pre-drainage, drainage, and post-drainage phase. In the pre-drainage phase winter snow fills pre-existing cracks and stream channels, efficiently blocking past drainage conduits. As temperatures increase in the spring, surface melting commences, initially saturating the snow pack and subsequently forming a surface network of streams that fills the lake basins. Basins continue to fill until lake drainage commences, which for individual lakes occurs at different times depending on the previous winter snow accumulation and summer temperatures. Three styles of drainage behavior have been observed: (1) no drainage, (2) slow drainage over the side into an adjacent pre-existing crack, and (3) rapid drainage through a new crack formed beneath the lake basin. Moreover, from year-to-year individual lakes exhibit different drainage behaviors. Lakes that drain slowly often utilize the same outflow channel for multiple years, creating dramatic canyons in the ice. Ultimately, these surface channels are advected out of the lake basin and a new channel forms. In the post-drainage phase, melt water continues to access the bed typically through a small conduit (e.g. moulin) formed near a local topographic minimum along the main drainage crack, draining the lake catchment throughout the remainder of the melt season. This melt water input to the bed leads to continued basal lubrication and enhanced ice flow compared to background velocities. Lakes that do not completely drain freeze over to form a surface ice layer that persists into the following year. Our results show that supraglacial lakes show a spectrum of drainage behaviors and that these styles of drainage lead to varying rates and timing of surface meltwater delivery to the bed resulting in different dynamic ice responses.

Investigation of dielectric pocket induced variations in tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Upasana; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

2016-04-01

The performance of conventional Tunnel FETs struggling from ambipolar issues, insufficient on-current, lower transconductance value, higher delay and lower cut off frequency has been improved by introducing several material and device engineering concepts in past few years. Keeping this in view, another interesting and reliable option i.e. Dielectric Pocket TFET (featuring a dielectric pocket placement near tunneling junction) has been comprehensively and qualitatively demonstrated using ATLAS device simulator. The architecture has been explored in terms of various device electrostatic parameters such as potential, energy band profile, electron and hole concentration, electric field variation and band to band generation rate (GBTB) near the tunneling junction where the Dielectric Pocket (DP) has been introduced. Subsequently, a detailed investigation by changing the position and dielectric constant of pocket at respective junctions has been made where DP induced variations in drain current, transconductance and parasitic capacitance have been examined. The work highlights major improvements over conventional TFET in terms of lower subthreshold swing and threshold voltage, higher drain current and transconductance, improved on-to-off current ratio, suppressed ambipolar conduction and improved dynamic power dissipation issues for low voltage analog and digital applications.

Chemical fractionation of metals in wetland sediments: Indiana Dunes National Lakeshore.

PubMed

Dollar, N L; Souch, C J; Filippelli, G M; Mastalerz, M

2001-09-15

Tessier-type (1979) sequential extractions for heavy metals (Cd, Cr, Cu, Fe, Mn, Pb, and Zn) were conducted on sediments from two wetland sites, one inundated and the other drained, within the Indiana Dunes National Lakeshore (IDNL), NW Indiana, with the objective of (i) evaluating extraction techniques on organic-rich sediments, (ii) determining the geochemistry and mobility of potentially biotoxic trace metals in a contaminated environment, and (iii) considering the implications of different restoration strategies on the potential for heavy metal remobilization. Long and repeated extractions were needed to effectively degrade the organic-rich sediments (up to 75% of the sediment by mass). Analysis of sulfur fractionation revealed that it was predominantly sequestered along with the organically bound fraction (renamed oxidizable). Metal recovery was good with the sum of the extractant steps typically within 20% of the total metal concentration determined after total microwave digestion. Results showed metal fractionation to be both metal- and site-specific, The oxidizable fraction is dominant for Cu, Cr, and Fe (>65% of the nonresidual fraction for almost all samples) and overall is most important also for Cd and Pb. The iron/manganese oxide fraction is important for Pb, Mn, and Zn, particularly at the drained site. The carbonate bound fraction is relatively insignificant at both sites, except for Cd and Mn, although it is more important at the drained site. The exchangeable fraction is significant in the uppermost sediments at the drained site, particularly for Cd (3-24%), Pb (3-14%), and Zn (36-45%); whereas, for the inundated site, it ranged only from 0 to 1% Zn, with no detectable Cd or Pb. Chromium, Cu, and Fe exist in forms not likely to be remobilized, whereas Cd, Mn, Pb, and Zn are potentially mobile if drained wetland sites are reflooded (and pH and redox potential altered). Simple mass balance calculations illustrate the potential for the removal of approximately 84,375 kg of exchangeable Zn if currently drained sites across the IDNL are reflooded, with concentrations in water draining into Lake Michigan as high as 5 ppm.

A novel inexpensive IV catheterization training model for paramedic students.

PubMed

Parwani, Vivek; Cone, David C

2006-01-01

Teaching paramedic students venipuncture and intravenous catheterization has traditionally relied on bulky, expensive phlebotomy models. A gelatin intravenous model (GIM) costing less than 50 cents is currently being used in the training of medical students and interns. The study objective was to evaluate paramedic students' perceptions of the GIM as a training tool. GIMs are created using gelatin, psyllium, Penrose drains, food coloring, salt, and water. Penrose drains are filled with artificial blood composed of salt water and food coloring. The drains are placed in an aluminum pan with a base of hardening gelatin, with half-inch drains at the bottom of the pan and quarter-inch drains higher up in layers of mixed psyllium and gelatin to simulate deep and superficial veins respectively. A convenience, volunteer sample of 14 paramedic students who previously trained with traditional phlebotomy models each made two to five attempts at intravenous insertion using the GIM. Perceptions of the GIM were measured using a Likert scale (1, worst rating; 5, best rating). Means are reported. Study subjects rated ease of use at 4.17, realism at 4.07, and effectiveness in learning intravenous insertion at 4.28. GIM as a more effective teaching tool than the conventional rubber arm yielded a rating of 4.14. This study is limited by a small sample size, and further studies evaluating the GIMs construct and content validity are needed. Despite these limitations, given the GIMs simplicity and value, paramedic instructors may wish to consider implementation of this device in their training programs.

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

PubMed Central

Martins, Jorge; Bahubalindruni, Pydi; Rovisco, Ana; Kiazadeh, Asal; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro

2017-01-01

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables. PMID:28773037

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits.

PubMed

Martins, Jorge; Bahubalindruni, Pydi; Rovisco, Ana; Kiazadeh, Asal; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro

2017-06-21

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.

Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry

NASA Astrophysics Data System (ADS)

Vishvakarma, S. K.; Beohar, Ankur; Vijayvargiya, Vikas; Trivedi, Priyal

2017-07-01

In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel field-effect transistor (TFET) has been made using distinct device geometry. Firstly, performance parameters of GAA-TFET are analyzed in terms of drain current, gate capacitances, transconductance, source-drain conductance at different radii and channel length. Furthermore, we also produce the geometrical analysis towards the optimized investigation of radio frequency parameters like cut-off frequency, maximum oscillation frequency and gain bandwidth product using a 3D technology computer-aided design ATLAS. Due to band-to-band tunneling based current mechanism unlike MOSFET, gate-bias dependence values as primary parameters of TFET differ. We also analyze that the maximum current occurs when radii of Si is around 8 nm due to high gate controllability over channel with reduced fringing effects and also there is no change in the current of TFET on varying its length from 100 to 40 nm. However current starts to increase when channel length is further reduced for 40 to 30 nm. Both of these trades-offs affect the RF performance of the device. Project supported by the Council of Scientific and Industrial Research (CSIR) Funded Research Project, Grant No. 22/0651/14/EMR-II, Government of India.

Fabrication and Analysis of a Selectively Contacted Dual Channel High Electron Mobility Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Khanna, Ravi

1992-01-01

A selectively contacted dual-channel high electron mobility transistor (SCD-CHEMT) has been designed, fabricated, and electrically characterized, in order to better understand the properties of two layers of two-dimensional electron gases (2DEGs) confined within a quantum well. The 2DEGs are placed under a Schottky barrier control gate which modulates their sheet charge densities, and by use of auxiliary Schottky barrier gates and two levels of ohmic contacts, electrical contacts to the individual channels in which each 2DEG resides is achieved. The design of the dual channel FET structure, and its practical realization by recourse to process development and fabrication are described, as are the techniques, results, and interpretations of electrical characterizations used to analyze the completed device. Critical fabrication procedures involving photolithography, etching, deposition, shallow and deep ohmic contact formation, and gate formation are developed, and a simple technique to reduce gate leakage by photo-oxidation is demonstrated. Analysis of the completed device is performed using one-dimensional band diagram simulations, magnetotransport and electrical measurements. Magnetotransport studies establish the existence of two 2DEGs within the quantum well at 4K. Drain current vs. drain voltage, and transconductance vs. gate voltage characteristics at room temperature confirm the presence of two 2DEGs and show that current flow between them occurs easily at room temperature. Carrier electron mobility profiles are taken of the 2DEGs and show that the lower 2DEG has a mobility comparable to that of a 2DEG formed at a normal interface, indicating that the "inverted interface problem" has been overcome. Capacitance vs. gate voltage measurements are taken, which are consistent with a simple device model consisting of gate depletion and interelectrode parasitic capacitances. It is concluded from the analysis that the dual channel system resides in three basic states: (1) Both channels are occupied by 2DEGs or (2) The upper channel is depleted, or (3) Both channels depleted. Finally, increase in isolation between the two 2DEGs is dramatically demonstrated at 77K by the drain current vs. drain voltage, and transconductance vs. gate voltage characteristics.

Can a bog drained for forestry be a stronger carbon sink than a natural bog forest?

NASA Astrophysics Data System (ADS)

Hommeltenberg, J.; Schmid, H. P.; Drösler, M.; Werle, P.

2014-07-01

This study compares the CO2 exchange of a natural bog forest, and of a bog drained for forestry in the pre-Alpine region of southern Germany. The sites are separated by only 10 km, they share the same soil formation history and are exposed to the same climate and weather conditions. In contrast, they differ in land use history: at the Schechenfilz site a natural bog-pine forest (Pinus mugo ssp. rotundata) grows on an undisturbed, about 5 m thick peat layer; at Mooseurach a planted spruce forest (Picea abies) grows on drained and degraded peat (3.4 m). The net ecosystem exchange of CO2 (NEE) at both sites has been investigated for 2 years (July 2010-June 2012), using the eddy covariance technique. Our results indicate that the drained, forested bog at Mooseurach is a much stronger carbon dioxide sink (-130 ± 31 and -300 ± 66 g C m-2 a-1 in the first and second year, respectively) than the natural bog forest at Schechenfilz (-53 ± 28 and -73 ± 38 g C m-2 a-1). The strong net CO2 uptake can be explained by the high gross primary productivity of the 44-year old spruces that over-compensates the two-times stronger ecosystem respiration at the drained site. The larger productivity of the spruces can be clearly attributed to the larger plant area index (PAI) of the spruce site. However, even though current flux measurements indicate strong CO2 uptake of the drained spruce forest, the site is a strong net CO2 source when the whole life-cycle since forest planting is considered. It is important to access this result in terms of the long-term biome balance. To do so, we used historical data to estimate the difference between carbon fixation by the spruces and the carbon loss from the peat due to drainage since forest planting. This rough estimate indicates a strong carbon release of +134 t C ha-1 within the last 44 years. Thus, the spruces would need to grow for another 100 years at about the current rate, to compensate the potential peat loss of the former years. In contrast, the natural bog-pine ecosystem has likely been a small but stable carbon sink for decades, which our results suggest is very robust regarding short-term changes of environmental factors.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

PubMed Central

Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-01-01

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm2·V−1·s−1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current–voltage and capacitance–voltage (C–V) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened. PMID:29621154

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawarada, H., E-mail: kawarada@waseda.jp; Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555; Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051

2014-07-07

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-Hmore » surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.« less

Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Chang; Liao, XueYang; Li, RuGuan

2015-09-28

In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Basedmore » on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.« less

Ni-rich precipitates in a lead bismuth eutectic loop

NASA Astrophysics Data System (ADS)

Kikuchi, K.; Saito, S.; Hamaguchi, D.; Tezuka, M.

2010-03-01

Solidified LBE was sampled from the specimens, electro-magnetic pump, filter, drain valve and oxygen sensor at the JAEA Lead Bismuth Loop-1 (JLBL-1) where the structural material was made of SS316. The concentration of Ni, Fe and Cr in LBE were analyzed by the Inductive Coupled Plasma atomic emission spectrometer. It was concluded that the solution of Ni into LBE was not saturated although the concentration of Fe and Cr almost achieved to the values in the literature. A needle-type structure appeared on the surface of solidified LBE inside the tube specimens. It was found to be Ni-rich precipitates by X-ray analyses (Field Emission Scanning Electron Microscope, FE-SEM). LBE samples collected from a circulating loop after discharging did not show the amount of impurities equivalent to the LBE bulk property.

Saturated Fats and Cardiovascular Disease: Interpretations Not as Simple as They Once Were.

PubMed

Bier, Dennis M

2016-09-09

Historically, the so-called "lipid hypothesis" has focused on the detrimental role of saturated fats per se in enhancing the risks of cardiovascular disease. Recently, a body of new information and systematic analyses of available data have questioned simple interpretation of the relationship of dietary saturated fats and of individual saturated fatty acids to CVD risk. Thus, current assessments of risks due to dietary fat consumption that emphasize the confounding nature of the dietary macronutrients substituted for dietary saturated fats and give broader recognition to the effect of patterns of food intake as a whole are the most productive approach to an overall healthy diet.

Beyond the Natural Proteome: Nondegenerate Saturation Mutagenesis-Methodologies and Advantages.

PubMed

Ferreira Amaral, M M; Frigotto, L; Hine, A V

2017-01-01

Beyond the natural proteome, high-throughput mutagenesis offers the protein engineer an opportunity to "tweak" the wild-type activity of a protein to create a recombinant protein with required attributes. Of the various approaches available, saturation mutagenesis is one of the core techniques employed by protein engineers, and in recent times, nondegenerate saturation mutagenesis is emerging as the approach of choice. This review compares the current methodologies available for conducting nondegenerate saturation mutagenesis with traditional, degenerate saturation and briefly outlines the options available for screening the resulting libraries, to discover a novel protein with the required activity and/or specificity. © 2017 Elsevier Inc. All rights reserved.

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Oil system drains. 23.1021 Section 23.1021 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Oil system drains. 23.1021 Section 23.1021 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

A prospective randomized study of use of drain versus no drain after burr-hole evacuation of chronic subdural hematoma.

PubMed

Singh, Amit Kumar; Suryanarayanan, Bhaskar; Choudhary, Ajay; Prasad, Akhila; Singh, Sachin; Gupta, Laxmi Narayan

2014-01-01

Chronic subdural hematoma (CSDH) recurs after surgical evacuation in 5-30% of patients. Inserting subdural drain might reduce the recurrence rate, but is not commonly practiced. There are few prospective studies to evaluate the effect of subdural drains. A prospective randomized study to investigate the effect of subdural drains in the on recurrence rates and clinical outcome following burr-hole drainage (BHD) of CSDH was undertaken. During the study period, 246 patients with CSDH were assessed for eligibility. Among 200 patients fulfilling the eligibility criteria, 100 each were assigned to "drain group" (drain inserted into the subdural space following BHD) and "without drain group" (subdural drain was not inserted following BHD) using random allocation software. The primary end point was recurrence needing re-drainage up to a period of 6 months from surgery. Recurrence occurred in 9 of 100 patients with a drain, and 26 of 100 patients in without drain group (P = 0.002). The mortality was 5% in patients with drain and 4% in patients without drain group (P = 0.744). The medical and surgical complications were comparable between the two study groups. Use of a subdural drain after burr-hole evacuation of a CSDH reduces the recurrence rate and is not associated with increased complications.

Effect of Ion Flux (Dose Rate) in Source-Drain Extension Ion Implantation for 10-nm Node FinFET and Beyond on 300/450mm Platforms

NASA Astrophysics Data System (ADS)

Shen, Ming-Yi

The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications of ion implantation (I/I) is source-drain extension (SDE) I/I for the silicon FinFET device. This study investigated the dose rate effects on the material properties and device performance of the 10-nm node silicon FinFET. In order to gain better understanding of the dose rate effects, the dose rate study is based on Synopsys Technology CAD (TCAD) process and device simulations that are calibrated and validated using available structural silicon fin samples. We have successfully shown that the kinetic monte carlo (KMC) I/I simulation can precisely model both the silicon amorphization and the arsenic distribution in the fin by comparing the KMC simulation results with TEM images. The results of the KMC I/I simulation show that at high dose rate more activated arsenic dopants were in the source-drain extension (SDE) region. This finding matches with the increased silicon amorphization caused by the high dose-rate I/I, given that the arsenic atoms could be more easily activated by the solid phase epitaxial regrowth process. This increased silicon amorphization led to not only higher arsenic activation near the spacer edge, but also less arsenic atoms straggling into the channel. Hence, it is possible to improve the throughput of the ion implanter when the dopants are implanted at high dose rate if the same doping level with a lower wafer dose can be achieved. In addition, the leakage current might also be reduced due to less undesired dopants in the channel. However, the twin defects from the problematic Si{111} recrystallization is well-known to cause excessive leakage current to the FinFET. This drawback can offset the benefits of the high dose rate I/I mentioned above. This work produced the first attempt at simulating the electrical impact of twin defects on advanced-node (10 nm) FinFET device performance. It was found that the high dose-rate I/I causes more twin defects in the silicon fin, and the physical locations of these defects were close to the channel. The defects undesirably induced trap-assisted band-to-band tunneling near the drain, which increased the leakage current. This issue could be mitigated by using asymmetrical gate overlap/underlap design or thicker spacer for SDE I/I so that the twin defects are not located in the depletion region near the drain.

Engineering Nanowire n-MOSFETs at L_{g}<8 nm

NASA Astrophysics Data System (ADS)

Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

2013-07-01

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

Chest drainage systems in use

PubMed Central

Zisis, Charalambos; Tsirgogianni, Katerina; Lazaridis, George; Lampaki, Sofia; Baka, Sofia; Mpoukovinas, Ioannis; Karavasilis, Vasilis; Kioumis, Ioannis; Pitsiou, Georgia; Katsikogiannis, Nikolaos; Tsakiridis, Kosmas; Rapti, Aggeliki; Trakada, Georgia; Karapantzos, Ilias; Karapantzou, Chrysanthi; Zissimopoulos, Athanasios; Zarogoulidis, Konstantinos

2015-01-01

A chest tube is a flexible plastic tube that is inserted through the chest wall and into the pleural space or mediastinum. It is used to remove air in the case of pneumothorax or fluid such as in the case of pleural effusion, blood, chyle, or pus when empyema occurs from the intrathoracic space. It is also known as a Bülau drain or an intercostal catheter. Insertion of chest tubes is widely performed by radiologists, pulmonary physicians and thoracic surgeons. Large catheters or small catheters are used based on each situation that the medical doctor encounters. In the current review we will focus on the chest drain systems that are in use. PMID:25815304

A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

PubMed Central

Aiello, Orazio; Fiori, Franco

2013-01-01

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor. PMID:23385408

The impact of capillary backpressure on spontaneous counter-current imbibition in porous media

NASA Astrophysics Data System (ADS)

Foley, Amir Y.; Nooruddin, Hasan A.; Blunt, Martin J.

2017-09-01

We investigate the impact of capillary backpressure on spontaneous counter-current imbibition. For such displacements in strongly water-wet systems, the non-wetting phase is forced out through the inlet boundary as the wetting phase imbibes into the rock, creating a finite capillary backpressure. Under the assumption that capillary backpressure depends on the water saturation applied at the inlet boundary of the porous medium, its impact is determined using the continuum modelling approach by varying the imposed inlet saturation in the analytical solution. We present analytical solutions for the one-dimensional incompressible horizontal displacement of a non-wetting phase by a wetting phase in a porous medium. There exists an inlet saturation value above which any change in capillary backpressure has a negligible impact on the solutions. Above this threshold value, imbibition rates and front positions are largely invariant. A method for identifying this inlet saturation is proposed using an analytical procedure and we explore how varying multiphase flow properties affects the analytical solutions and this threshold saturation. We show the value of this analytical approach through the analysis of previously published experimental data.

THE URBAN STREAM SYNDROME: CURRENT KNOWLEDGE AND THE SEARCH FOR A CURE

EPA Science Inventory

The term "urban stream syndrome" describes the consistently observed ecological degradation of streams draining urban land. This paper reviews recent literature to describe symptoms of the syndrome, explores mechanisms driving the syndrome, and identifies appropriate goals and me...

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 23.1021 Section 23.1021... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Powerplant Oil System § 23.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 29.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 29.1021 Section 29.1021... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Oil System § 29.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 27.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 27.1021 Section 27.1021... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Oil System § 27.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible; and (b...

14 CFR 25.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 25.1021 Section 25.1021... STANDARDS: TRANSPORT CATEGORY AIRPLANES Powerplant Oil System § 25.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 25.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 25.1021 Section 25.1021... STANDARDS: TRANSPORT CATEGORY AIRPLANES Powerplant Oil System § 25.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 23.1021 - Oil system drains.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Oil system drains. 23.1021 Section 23.1021... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Powerplant Oil System § 23.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain...

14 CFR 29.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 29.1021 Section 29.1021... STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Oil System § 29.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible...

14 CFR 27.1021 - Oil system drains.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Oil system drains. 27.1021 Section 27.1021... STANDARDS: NORMAL CATEGORY ROTORCRAFT Powerplant Oil System § 27.1021 Oil system drains. A drain (or drains) must be provided to allow safe drainage of the oil system. Each drain must— (a) Be accessible; and (b...

A physically-based Distributed Hydrologic Model for Tropical Catchments

NASA Astrophysics Data System (ADS)

Abebe, N. A.; Ogden, F. L.

2010-12-01

Hydrological models are mathematical formulations intended to represent observed hydrological processes in a watershed. Simulated watersheds in turn vary in their nature based on their geographic location, altitude, climatic variables and geology and soil formation. Due to these variations, available hydrologic models vary in process formulation, spatial and temporal resolution and data demand. Many tropical watersheds are characterized by extensive and persistent biological activity and a large amount of rain. The Agua Salud catchments located within the Panama Canal Watershed, Panama, are such catchments identified by steep rolling topography, deep soils derived from weathered bedrock, and limited exposed bedrock. Tropical soils are highly affected by soil cracks, decayed tree roots and earthworm burrows forming a network of preferential flow paths that drain to a perched water table, which forms at a depth where the vertical hydraulic conductivity is significantly reduced near the bottom of the bioturbation layer. We have developed a physics-based, spatially distributed, multi-layered hydrologic model to simulate the dominant processes in these tropical watersheds. The model incorporates the major flow processes including overland flow, channel flow, matrix and non-Richards film flow infiltration, lateral downslope saturated matrix and non-Darcian pipe flow in the bioturbation layer, and deep saturated groundwater flow. Emphasis is given to the modeling of subsurface unsaturated zone soil moisture dynamics and the saturated preferential lateral flow from the network of macrospores. Preliminary results indicate that the model has the capability to simulate the complex hydrological processes in the catchment and will be a useful tool in the ongoing comprehensive ecohydrological studies in tropical catchments, and help improve our understanding of the hydrological effects of deforestation and aforestation.

Ground Water in the Southern Lihue Basin, Kauai, Hawaii

USGS Publications Warehouse

Izuka, Scot K.; Gingerich, Stephen B.

1998-01-01

A multi-phased study of ground-water resources, including well drilling, aquifer tests, analysis of ground-water discharge, and numerical ground-water modeling, indicates that the rocks of the southern Lihue Basin, Kauai, have permeabilities that are much lower than in most other areas of ground-water development in the Hawaiian islands. The regional hydraulic conductivity of the Koloa Volcanics, which dominates fresh ground-water flow in the basin, is about 0.275 foot per day. The Waimea Canyon Basalt which surrounds the basin and underlies the Koloa Volcanics within the basin is intruded by dikes that reduce the bulk hydraulic conductivity of the rocks to about 1.11 feet per day. The low permeabilities result in steeper head gradients compared with other areas in the Hawaiian islands, and a higher proportion of ground-water discharging to streams than to the ocean. Water levels rise from near sea level at the coast to several hundreds of feet above sea level at the center of the basin a few miles inland. The high inland water levels are part of a completely saturated ground-water system. Because of the low regional hydraulic conductivity and high influx of water from recharge in the southern Lihue Basin, the rocks become saturated nearly to the surface and a variably saturated/unsaturated (perched) condition is not likely to exist. Streams incising the upper part of the aquifer drain ground water and keep the water levels just below the surface in most places. Streams thus play an important role in shaping the water table in the southern Lihue Basin. At least 62 percent of the ground water discharging from the aquifer in the southern Lihue Basin seeps to streams; the remainder seeps directly to the ocean or is withdrawn by wells.

An approach to understanding hydrologic connectivity on the hillslope and the implications for nutrient transport

USGS Publications Warehouse

Stieglitz, M.; Shaman, J.; McNamara, J.; Engel, V.; Shanley, J.; Kling, G.W.

2003-01-01

Hydrologic processes control much of the export of organic matter and nutrients from the land surface. It is the variability of these hydrologic processes that produces variable patterns of nutrient transport in both space and time. In this paper, we explore how hydrologic "connectivity" potentially affects nutrient transport. Hydrologic connectivity is defined as the condition by which disparate regions on the hillslope are linked via subsurface water flow. We present simulations that suggest that for much of the year, water draining through a catchment is spatially isolated. Only rarely, during storm and snowmelt events when antecedent soil moisture is high, do our simulations suggest that mid-slope saturation (or near saturation) occurs and that a catchment connects from ridge to valley. Observations during snowmelt at a small headwater catchment in Idaho are consistent with these model simulations. During early season discharge episodes, in which the mid-slope soil column is not saturated, the electrical conductivity in the stream remains low, reflecting a restricted, local (lower slope) source of stream water and the continued isolation of upper and mid-slope soil water and nutrients from the stream system. Increased streamflow and higher stream water electrical conductivity, presumably reflecting the release of water from the upper reaches of the catchment, are simultaneously observed when the mid-slope becomes sufficiently wet. This study provides preliminary evidence that the seasonal timing of hydrologic connectivity may affect a range of ecological processes, including downslope nutrient transport, C/N cycling, and biological productivity along the toposequence. A better elucidation of hydrologic connectivity will be necessary for understanding local processes as well as material export from land to water at regional and global scales. Copyright 2003 by the American Geophysical Union.

Runoff and solute mobilization processes in a semiarid headwater catchment

NASA Astrophysics Data System (ADS)

Hughes, Justin D.; Khan, Shahbaz; Crosbie, Russell S.; Helliwell, Stuart; Michalk, David L.

2007-09-01

Runoff and solute transport processes contributing to streamflow were determined in a small headwater catchment in the eastern Murray-Darling Basin of Australia using hydrometric and tracer methods. Streamflow and electrical conductivity were monitored from two gauges draining a portion of the upper catchment area (UCA) and a saline scalded area, respectively. Runoff in the UCA was related to the formation of a seasonally perched aquifer in the near-surface zone (0-0.4 m). A similar process was responsible for runoff generation in the saline scalded area. However, saturation in the scald area was related to the proximity of groundwater rather than low subsurface hydraulic conductivity. Because of higher antecedent water content, runoff commenced earlier in winter from the scald than did the UCA. Additionally, areal runoff from the scald was far greater than from the UCA. Total runoff from the UCA was higher than the scald (15.7 versus 3.5 mL), but salt export was far lower (0.6 and 5.4 t for the UCA and scald area, respectively) since salinity of the scald runoff was far higher than that from the UCA, indicating the potential impact of saline scalded areas at the catchment scale. End-member mixing analysis modeling using six solutes indicated that most runoff produced from the scald was "new" (40-71%) despite the proximity of the groundwater surface and the high antecedent moisture levels. This is a reflection of the very low hydraulic conductivity of soils in the study area. Nearly all chloride exported to the stream from the scald emanated from the near-surface zone (77-87%). Runoff and solute mobilization processes depend upon seasonal saturation occurring in the near-surface zone during periods of low evaporative demand and generation of saturated overland flow.

Runoff and Solute Mobilisation in a Semi-arid Headwater Catchment

NASA Astrophysics Data System (ADS)

Hughes, J. D.; Khan, S.; Crosbie, R.; Helliwell, S.; Michalk, D.

2006-12-01

Runoff and solute transport processes contributing to stream flow were determined in a small headwater catchment in the eastern Murray-Darling Basin of Australia using hydrometric and tracer methods. Stream flow and electrical conductivity were monitored from two gauges draining a portion of upper catchment area (UCA), and a saline scalded area respectively. Results show that the bulk of catchment solute export, occurs via a small saline scald (< 2% of catchment area) where solutes are concentrated in the near surface zone (0-40 cm). Non-scalded areas of the catchment are likely to provide the bulk of catchment runoff, although the scalded area is a higher contributor on an areal basis. Runoff from the non-scalded area is about two orders of magnitude lower in electrical conductivity than the scalded area. This study shows that the scalded zone and non-scalded parts of the catchment can be managed separately since they are effectively de-coupled except over long time scales, and produce runoff of contrasting quality. Such differences are "averaged out" by investigations that operate at larger scales, illustrating that observations need to be conducted at a range of scales. EMMA modelling using six solutes shows that "event" or "new" water dominated the stream hydrograph from the scald. This information together with hydrometric data and soil physical properties indicate that saturated overland flow is the main form of runoff generation in both the scalded area and the UCA. Saturated areas make up a small proportion of the catchment, but are responsible for production of all run off in conditions experienced throughout the experimental period. The process of saturation and runoff bears some similarities to the VSA concept (Hewlett and Hibbert 1967).

Modeling of coastal water contamination in Fortaleza (Northeastern Brazil).

PubMed

Pereira, S P; Rosman, P C C; Alvarez, C; Schetini, C A F; Souza, R O; Vieira, R H S F

2015-01-01

An important tool in environmental management projects and studies due to the complexity of environmental systems, environmental modeling makes it possible to integrate many variables and processes, thereby providing a dynamic view of systems. In this study the bacteriological quality of the coastal waters of Fortaleza (a state capital in Northeastern Brazil) was modeled considering multiple contamination sources. Using the software SisBaHiA, the dispersion of thermotolerant coliforms and Escherichia coli from three sources of contamination (local rivers, storm drains and submarine outfall) was analyzed. The models took into account variations in bacterial decay due to solar radiation and other environmental factors. Fecal pollution discharged from rivers and storm drains is transported westward by coastal currents, contaminating strips of beach water to the left of each storm drain or river. Exception to this condition only occurs on beaches protected by the breakwater of the harbor, where counterclockwise vortexes reverse this behavior. The results of the models were consistent with field measurements taken during the dry and the rainy season. Our results show that the submarine outfall plume was over 2 km from the nearest beach. The storm drains and the Maceió stream are the main factors responsible for the poor water quality on the waterfront of Fortaleza. The depollution of these sources would generate considerable social, health and economic gains for the region.

Demagnetization using a determined estimated magnetic state

DOEpatents

Denis, Ronald J; Makowski, Nathanael J

2015-01-13

A method for demagnetizing comprising positioning a core within the electromagnetic field generated by a first winding until the generated first electrical current is not substantially increasing, thereby determining a saturation current. A second voltage, having the opposite polarity, is then applied across the first winding until the generated second electrical current is approximately equal to the magnitude of the determined saturation current. The maximum magnetic flux within the core is then determined using the voltage across said first winding and the second current. A third voltage, having the opposite polarity, is then applied across the first winding until the core has a magnetic flux equal to approximately half of the determined maximum magnetic flux within the core.

Formation and dissipation of runaway current by MGI on J-TEXT

NASA Astrophysics Data System (ADS)

Wei, Yunong; Chen, Zhongyong; Huang, Duwei; Tong, Ruihai; Zhang, Xiaolong

2017-10-01

Plasma disruptions are one of the major concern for ITER. A large fraction of runaway current may be formed due to the avalanche generation of runaway electrons (REs) during disruptions and ruin the device structure. Experiments of runaway current formation and dissipation have been done on J-TEXT. Two massive gas injection (MGI) valves are used to form and dissipate the runaway current. Hot tail RE generation caused by the fast thermal quench leads to an abnormal formation of runaway current when the pre-TQ electron density increases in a range of 0.5-2-10 19m-3. 1020-22 quantities of He, Ne, Ar or Kr impurities are injected by MGI2 to dissipate the runaway current. He injection shows no obvious effect on runaway current dissipation in the experiments and Kr injection shows the best. The kinetic energy of REs and the magnetic energy of RE beam will affect the dissipation efficiency to a certain extent. Runaway current decay rate is found increasing quickly with the increase of the gas injection when the quantity is moderate, and then reaches to a saturation value with large quantity injection. A possible reason to explain the saturation of dissipation effect is the saturation of gas assimilation efficiency.

THE PANCHROMATIC HUBBLE ANDROMEDA TREASURY. VIII. A WIDE-AREA, HIGH-RESOLUTION MAP OF DUST EXTINCTION IN M31

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dalcanton, Julianne J.; Fouesneau, Morgan; Weisz, Daniel R.

We map the distribution of dust in M31 at 25 pc resolution using stellar photometry from the Panchromatic Hubble Andromeda Treasury survey. The map is derived with a new technique that models the near-infrared color–magnitude diagram (CMD) of red giant branch (RGB) stars. The model CMDs combine an unreddened foreground of RGB stars with a reddened background population viewed through a log-normal column density distribution of dust. Fits to the model constrain the median extinction, the width of the extinction distribution, and the fraction of reddened stars in each 25 pc cell. The resulting extinction map has a factor ofmore » ≳4 times better resolution than maps of dust emission, while providing a more direct measurement of the dust column. There is superb morphological agreement between the new map and maps of the extinction inferred from dust emission by Draine et al. However, the widely used Draine and Li dust models overpredict the observed extinction by a factor of ∼2.5, suggesting that M31's true dust mass is lower and that dust grains are significantly more emissive than assumed in Draine et al. The observed factor of ∼2.5 discrepancy is consistent with similar findings in the Milky Way by the Plank Collaboration et al., but we find a more complex dependence on parameters from the Draine and Li dust models. We also show that the the discrepancy with the Draine et al. map is lowest where the current interstellar radiation field has a harder spectrum than average. We discuss possible improvements to the CMD dust mapping technique, and explore further applications in both M31 and other galaxies.« less

Timing of Re-Transfusion Drain Removal Following Total Knee Replacement

PubMed Central

Leeman, MF; Costa, ML; Costello, E; Edwards, D

2006-01-01

INTRODUCTION The use of postoperative drains following total knee replacement (TKR) has recently been modified by the use of re-transfusion drains. The aim of our study was to investigate the optimal time for removal of re-transfusion drains following TKR. PATIENTS AND METHODS The medical records of 66 patients who had a TKR performed between October 2003 and October 2004 were reviewed; blood drained before 6 h and the total volume of blood drained was recorded. RESULTS A total of 56 patients had complete records of postoperative drainage. The mean volume of blood collected in the drain in the first 6 h was 442 ml. The mean total volume of blood in the drain was 595 ml. Therefore, of the blood drained, 78% was available for transfusion. CONCLUSION Re-transfusion drains should be removed after 6 h, when no further re-transfusion is permissible. PMID:16551400

A Brief History of Two Common Surgical Drains.

PubMed

Meyerson, Joseph M

2016-01-01

The use of surgical drains is commonplace in all types of surgical procedures, and rarely do we take the time to contemplate or investigate the origins of these critical devices. Every surgeon should be familiar with the Jackson-Pratt drain and Blake drain, 2 of the most frequently used closed suction, negative-pressure drainage devices in surgery. These drains are used throughout the body in a wide variety of surgical procedures. The development and differences between these 2 devices are seldom known by the practicing surgeon. In this article, we delve into the ancient history of drains, the creation and alterations of the closed suction, negative-pressure drain that paved the way for the Jackson-Pratt and Blake drain. Finally, we will discuss the variety of reservoirs that attach to these drains and the origin of the well-known adage of when to pull a drain.

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

NASA Astrophysics Data System (ADS)

Pearton, S. J.; Kang, B. S.; Kim, Suku; Ren, F.; Gila, B. P.; Abernathy, C. R.; Lin, Jenshan; Chu, S. N. G.

2004-07-01

There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to central monitoring locations. We discuss the advances in use of GaN-based solid-state sensors for these applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization-induced two-dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors to detect gases, polar liquids and mechanical pressure. AlGaN/GaN HEMT structures have been demonstrated to exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. Pt-gated GaN Schottky diodes and Sc2O3/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H2. Of particular interest is detection of ethylene (C2H4), which has strong double bonds and hence is difficult to dissociate at modest temperatures. Apart from combustion gas sensing, the AlGaN/GaN heterostructure devices can be used as sensitive detectors of pressure changes. In addition, large changes in source-drain current of the AlGaN/GaN HEMT sensors can be detected upon adsorption of biological species on the semiconductor surface. Finally, the nitrides provide an ideal platform for fabrication of surface acoustic wave (SAW) devices. The GaN-based devices thus appear promising for a wide range of chemical, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications. In addition, the sensors are compatible with high bit-rate wireless communication systems that facilitate their use in remote arrays.

Assessing species saturation: conceptual and methodological challenges.

PubMed

Olivares, Ingrid; Karger, Dirk N; Kessler, Michael

2018-05-07

Is there a maximum number of species that can coexist? Intuitively, we assume an upper limit to the number of species in a given assemblage, or that a lineage can produce, but defining and testing this limit has proven problematic. Herein, we first outline seven general challenges of studies on species saturation, most of which are independent of the actual method used to assess saturation. Among these are the challenge of defining saturation conceptually and operationally, the importance of setting an appropriate referential system, and the need to discriminate among patterns, processes and mechanisms. Second, we list and discuss the methodological approaches that have been used to study species saturation. These approaches vary in time and spatial scales, and in the variables and assumptions needed to assess saturation. We argue that assessing species saturation is possible, but that many studies conducted to date have conceptual and methodological flaws that prevent us from currently attaining a good idea of the occurrence of species saturation. © 2018 Cambridge Philosophical Society.

Design and realization of assessment software for DC-bias of transformers

NASA Astrophysics Data System (ADS)

Liu, Chang; Liu, Lian-guang; Yuan, Zhong-chen

2013-03-01

The transformer working at the rated state will partically be saturated, and its mangetic current will be distorted accompanying with various of harmonic, increasing reactive power demand and some other affilicated phenomenon, which will threaten the safe operation of power grid. This paper establishes a transformer saturation circuit model of DCbias under duality principle basing on J-A theory which can reflect the hysteresis characteristics of iron core, and develops an software can assess the effects of transformer DC-bias using hybrid programming technology of C#.net and MATLAB with the microsoft.net platform. This software is able to simulate the mangnetizing current of different structures and assess the Saturation Level of transformers and the influnces of affilicated phenomenon accroding to the parameter of transformers and the DC equivalent voltage. It provides an effective method to assess the influnces of transformers caused by magnetic storm disaster and the earthing current of the HVDC project.

Advances in electrometer vacuum tube design

NASA Technical Reports Server (NTRS)

1970-01-01

Single-ended, miniature-cathode tube with a relatively low grid current level is constructed. Adequate cathode temperature at relatively low heater power drain is provided by designing the supporting spacers to provide a square cathode hole. Method of assembling the mount and bonding the elements is discussed.

High conductivity and transparent aluminum-based multi-layer source/drain electrodes for thin film transistors

NASA Astrophysics Data System (ADS)

Yao, Rihui; Zhang, Hongke; Fang, Zhiqiang; Ning, Honglong; Zheng, Zeke; Li, Xiaoqing; Zhang, Xiaochen; Cai, Wei; Lu, Xubing; Peng, Junbiao

2018-02-01

In this study, high conductivity and transparent multi-layer (AZO/Al/AZO-/Al/AZO) source/drain (S/D) electrodes for thin film transistors were fabricated via conventional physical vapor deposition approaches, without toxic elements or further thermal annealing process. The 68 nm-thick multi-layer films with excellent optical properties (transparency: 82.64%), good electrical properties (resistivity: 6.64  ×  10-5 Ω m, work function: 3.95 eV), and superior surface roughness (R q   =  0.757 nm with scanning area of 5  ×  5 µm2) were fabricated as the S/D electrodes. Significantly, comprehensive performances of AZO films are enhanced by the insertion of ultra-thin Al layers. The optimal transparent TFT with this multi-layer S/D electrodes exhibited a decent electrical performance with a saturation mobility (µ sat) of 3.2 cm2 V-1 s-1, an I on/I off ratio of 1.59  ×  106, a subthreshold swing of 1.05 V/decade. The contact resistance of AZO/Al/AZO/Al/AZO multi-layer electrodes is as low as 0.29 MΩ. Moreover, the average visible light transmittance of the unpatterned multi-layers constituting a whole transparent TFT could reach 72.5%. The high conductivity and transparent multi-layer S/D electrodes for transparent TFTs possessed great potential for the applications of the green and transparent displays industry.

Dissolved organic nitrogen in urban streams: Biodegradability and molecular composition studies.

PubMed

Lusk, Mary G; Toor, Gurpal S

2016-06-01

A portion of the dissolved organic nitrogen (DON) is biodegradable in water bodies, yet our knowledge of the molecular composition and controls on biological reactivity of DON is limited. Our objective was to investigate the biodegradability and molecular composition of DON in streams that drain a gradient of 19-83% urban land use. Weekly sampling over 21 weeks suggested no significant relationship between urban land use and DON concentration. We then selected two streams that drain 28% and 83% urban land use to determine the biodegradability and molecular composition of the DON by coupling 5-day bioassay experiments with high resolution Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR-MS). Both urban streams contained a wide range of N-bearing biomolecular formulas and had >80% DON in lignin-like compounds, with only 5-7% labile DON. The labile DON consisted mostly of lipid-and protein-like structures with high H/C and low O/C values. Comparison of reactive formulas and formed counterparts during the bioassay experiments indicated a shift toward more oxygenated and less saturated N-bearing DON formulas due to the microbial degradation. Although there was a little net removal (5-7%) of organic-bound N over the 5-day bioassay, there was some change to the carbon skeleton of DON compounds. These results suggest that DON in urban streams contains a complex mixture of compounds such as lipids, proteins, and lignins of variable chemical structures and biodegradability. Copyright © 2016 Elsevier Ltd. All rights reserved.

Analytical Modeling of Triple-Metal Hetero-Dielectric DG SON TFET

NASA Astrophysics Data System (ADS)

Mahajan, Aman; Dash, Dinesh Kumar; Banerjee, Pritha; Sarkar, Subir Kumar

2018-02-01

In this paper, a 2-D analytical model of triple-metal hetero-dielectric DG TFET is presented by combining the concepts of triple material gate engineering and hetero-dielectric engineering. Three metals with different work functions are used as both front- and back gate electrodes to modulate the barrier at source/channel and channel/drain interface. In addition to this, front gate dielectric consists of high-K HfO2 at source end and low-K SiO2 at drain side, whereas back gate dielectric is replaced by air to further improve the ON current of the device. Surface potential and electric field of the proposed device are formulated solving 2-D Poisson's equation and Young's approximation. Based on this electric field expression, tunneling current is obtained by using Kane's model. Several device parameters are varied to examine the behavior of the proposed device. The analytical model is validated with TCAD simulation results for proving the accuracy of our proposed model.

High performance multi-finger MOSFET on SOI for RF amplifiers

NASA Astrophysics Data System (ADS)

Adhikari, M. Singh; Singh, Y.

2017-10-01

In this paper, we propose structural modifications in the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon-on-insulator by utilizing trenches in the epitaxial layer. The proposed multi-finger MOSFET (MF-MOSFET) has dual vertical-gates placed in separate trenches to form multiple channels in the p-base which carry the drain current in parallel. The proposed device uses TaN as gate electrode and SiO2 as gate dielectric. Simultaneous conduction of multiple channels enhances the drain current (ID) and provides higher transconductance (gm) leading to significant improvement in cut-off frequency (ft). Two-dimensional simulations are performed to evaluate and compare the performance of the MF-MOSFET with the conventional MOSFET. At a gate length of 60 nm, the proposed device provides 4 times higher ID, 3 times improvement in gm and 1.25 times increase in ft with better control over the short channel effects as compared with the conventional device.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

NASA Astrophysics Data System (ADS)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

A study of the complications of small bore 'Seldinger' intercostal chest drains.

PubMed

Davies, Helen E; Merchant, Shairoz; McGown, Anne

2008-06-01

Use of small bore chest drains (<14F), inserted via the Seldinger technique, has increased globally over the last few years. They are now used as first line interventions in most acute medical situations when thoracostomy is required. Limited data are available on the associated complications. In this study, the frequency of complications associated with 12F chest drains, inserted using the Seldinger technique, was quantified. A retrospective case note audit was performed of consecutive patients requiring pleural drainage over a 12-month period. One hundred consecutive small bore Seldinger (12F) chest drain insertions were evaluated. Few serious complications occurred. However, 21% of the chest drains were displaced ('fell out') and 9% of the drains became blocked. This contributed to high morbidity rates, with 13% of patients requiring repeat pleural procedures. The frequency of drain blockage in pleural effusion was reduced by administration of regular normal saline drain flushes (odds ratio for blockage in flushed drains compared with non-flushed drains 0.04, 95% CI: 0.01-0.37, P < 0.001). Regular chest drain flushes are advocated in order to reduce rates of drain blockage, and further studies are needed to determine optimal fixation strategies that may reduce associated patient morbidity.

Comparison of a large and small-calibre tube drain for managing spontaneous pneumothoraces.

PubMed

Benton, Ian J; Benfield, Grant F A

2009-10-01

To compare treatment success of large- and small-bore chest drains in the treatment of spontaneous pneumothoraces the case-notes were reviewed of those admitted to our hospital with a total of 73 pneumothoraces and who were treated by trainee doctors of varying experience. Both a large- and a small-bore intercostal tube drain system were in use during the two-year period reviewed. Similar pneumothorax profile and numbers treated with both drains were recorded, resulting in a similar drain time and numbers of successful and failed re-expansion of pneumothoraces. Successful pneumothorax resolution was the same for both drain types and the negligible tube drain complications observed with the small-bore drain reflected previously reported experiences. However the large-bore drain was associated with a high complication rate (32%) with more infectious complications (24%). The small-bore drain was prone to displacement (21%). There was generally no evidence of an increased failure and morbidity, reflecting poorer expertise, in the non-specialist trainees managing the pneumothoraces. A practical finding however was that in those large pneumothoraces where re-expansion failed, the tip of the drain had not been sited at the apex of the pleural cavity irrespective of the drain type inserted.

A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

NASA Astrophysics Data System (ADS)

Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

2018-05-01

In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

Fabrication of resistively-coupled single-electron device using an array of gold nanoparticles

NASA Astrophysics Data System (ADS)

Huong, Tran Thi Thu; Matsumoto, Kazuhiko; Moriya, Masataka; Shimada, Hiroshi; Kimura, Yasuo; Hirano-Iwata, Ayumi; Mizugaki, Yoshinao

2017-08-01

We demonstrated one type of single-electron device that exhibited electrical characteristics similar to those of resistively-coupled SE transistor (R-SET) at 77 K and room temperature (287 K). Three Au electrodes on an oxidized Si chip served as drain, source, and gate electrodes were formed using electron-beam lithography and evaporation techniques. A narrow (70-nm-wide) gate electrode was patterned using thermal evaporation, whereas wide (800-nm-wide) drain and source electrodes were made using shadow evaporation. Subsequently, aqueous solution of citric acid and 15-nm-diameter gold nanoparticles (Au NPs) and toluene solution of 3-nm-diameter Au NPs chemisorbed via decanethiol were dropped on the chip to make the connections between the electrodes. Current-voltage characteristics between the drain and source electrodes exhibited Coulomb blockade (CB) at both 77 and 287 K. Dependence of the CB region on the gate voltage was similar to that of an R-SET. Simulation results of the model based on the scanning electron microscopy image of the device could reproduce the characteristics like the R-SET.

Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

NASA Astrophysics Data System (ADS)

Liu, Xiangyu; Hu, Huiyong; Wang, Bin; Wang, Meng; Han, Genquan; Cui, Shimin; Zhang, Heming

2017-02-01

In this paper, a novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The simulation results show that Ion = 5.5 × 10-5A/μm is achieved. The junctionless device structure enhances Ion effectively and increases the region where significant BTBT occurs, comparing with the normal Ge-nTEFT. The impact of the lightly doped drain (LDD) region is investigated. A comparison of Ion and Ioff of the junctionless Ge n-TFET with different channel doping concentration ND and LDD doping concentration NLDD is studied. Ioff is reduced 1 order of magnitude with the optimized ND and NLDD are 1 × 1018cm-3 and 1 × 1017 cm-3, respectively. To reduce the gate induced drain leakage (GIDL) current, the impact of the sloped gate oxide structure is also studied. By employing the sloped gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved at Ion = 4.05 × 10-5A/μm and Ion/Ioff = 5.7 × 106.

Linear response of field-aligned currents to the interplanetary electric field

NASA Astrophysics Data System (ADS)

Weimer, D. R.; Edwards, T. R.; Olsen, Nils

2017-08-01

Many studies that have shown that the ionospheric, polar cap electric potentials (PCEPs) exhibit a "saturation" behavior in response to the level of the driving by the solar wind. As the magnitudes of the interplanetary magnetic field (IMF) and electric field (IEF) increase, the PCEP response is linear at low driving levels, followed with a rollover to a more constant level. While there are several different theoretical explanations for this behavior, so far, no direct observational evidence has existed to confirm any particular model. In most models of this saturation, the interaction of the field-aligned currents (FACs) with the solar wind/magnetosphere/ionosphere system has a role. As the FACs are more difficult to measure, their behavior in response to the level of the IEF has not been investigated as thoroughly. In order to resolve the question of whether or not the FAC also exhibit saturation, we have processed the magnetic field measurements from the Ørsted, CHAMP, and Swarm missions, spanning more than a decade. As the amount of current in each region needs to be known, a new technique is used to separate and sum the current by region, widely known as R0, R1, and R2. These totals are found separately for the dawnside and duskside. Results indicate that the total FAC has a response to the IEF that is highly linear, continuing to increase well beyond the level at which the electric potentials saturate. The currents within each region have similar behavior.

Fabrication and Electrical Characterization of Deep-Submicron Trench-Isolated CMOS Device Structures.

NASA Astrophysics Data System (ADS)

Perera, Asanga Hiran

The magnitude of the extrinsic parasitic MOSFET series resistance was experimentally evaluated in the deep -submicron domain and its consequence on device performance was determined. The series resistance of depletion mode MOSFET test structures were measured for source-drain sizes as small as 0.2 μm by 0.3 μm at room temperature and 100^ circK. To build the test structures a multilevel -full electron beam lithography fabrication process was developed with a pattern overlay accuracy of 75 nm. A new positive tone novalac resist, SYSTEM-9, was developed for electron beam application. The resist had moderate sensitivity, 19-30 muC/cm ^2, and a contrast up to 14. Interrupted development and reduced developer temperature resulted in contrast enhancements of up to 125%. SYSTEM-9 had a two or three times better dry etch resistance than PMMA. A shallow trench isolation technology capable of defining 0.2 μm wide active areas was developed. A rapid thermal annealing based silicidation scheme using TiSi_2 was established. MOSFET sidewall spacer formation using PECVD SiO_2 was calibrated. Antimony and gallium were investigated as possible alternatives to arsenic and boron, respectively, and well behaved substrate diodes were successfully fabricated. Two new patterning techniques for the metal bi-layer metalization of TiW and Al, based on liftoff and reactive ion etching, were developed. The source drain resistance of the test structures was measured at room temperature and at 100^ circK. An LN_2 flushed cold chuck for low temperature device probing was designed and constructed. The temperature dependence of the current voltage characteristics and the extracted series resistance proved that current flow in the contacts was tunneling dominated. The extrinsic source-drain resistance increased rapidly as the contact size decreased below 0.5 mum, and showed an almost two order of magnitude change, when the source-drain area was reduced from 2 x 1.7 mum^2 to 0.2 x 0.3 mum^2 . The effect of this resistance increase on a CMOS inverter switching speed was estimated. A first order empirical model to predict the series resistance was also formulated. Good correspondence was observed between results from the device simulator PISCES-2B and measured data for larger source-drain sizes.

Alternative to Agricultural Drains in California's San Joaquin Valley: Results of a Regional-Scale Hydrogeologic Approach

NASA Astrophysics Data System (ADS)

Belitz, Kenneth; Phillips, Steven P.

1995-08-01

The occurrence of selenium in agricultural drainage water derived from the central part of the western San Joaquin Valley has focused concern on alternatives to agricultural drains for managing shallow, poor-quality groundwater. A transient, three-dimensional simulation model was developed to evaluate the response of the water table to alternatives that affect recharge to or discharge from the groundwater flow system. The modeled area is 551 mi2 (1 mi2 = 2.59 km2) and includes both the semiconfined and confined zones above and below the Corcoran Clay Member of the Tulare Formation of Pleistocene age. The simulation model was calibrated using hydrologic data from 1972 to 1988, and was extended to the year 2040 to forecast for various management alternatives, including maintenance of present practices, land retirement, reduced recharge, increased groundwater pumping, and combinations of these alternatives. Maintenance of present practices results in a worsening of the situation: the total area subject to bare-soil evaporation increases from 224 mi2 in 1990 to 344 mi2 in 2040, and drain flow increases from 25,000 ac ft/yr (1 ac ft = 1234 m3) to 28,000 ac ft/yr. Although land retirement results in elimination of bare-soil evaporation and drain flow in the areas retired, it has little to no effect in adjacent areas. In contrast, regional-scale changes in recharge and pumping are effective for regional management. The area subject to bare-soil evaporation can be reduced to 78 mi2, and drain flow to 8000 ac ft/yr if (1) recharge is reduced by 15% (26,000 ac ft/yr) in areas that currently use surface and groundwater (362 mi2); (2) recharge is reduced by 40% (28,000 ac ft/yr) in areas that currently use only surface water (137 mi2); and (3) pumping rates are uniformly incremented by 0.5 ft/yr (160,000 ac ft/yr) in both areas. If these water budget changes were to be implemented in the study area, and in adjacent areas with similiar Hydrogeologic characteristics, then approximately 400,000 ac ft/yr of surface water would be made available. Thus a shift in the hydrologic budget in the central part of the western San Joaquin Valley improves the prospects for sustaining agriculture in the area, and could provide substantial water resources for other uses.

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.