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Sample records for driven semiconductor optical

  1. Consistency Properties of a Chaotic Semiconductor Laser Driven by Optical Feedback

    NASA Astrophysics Data System (ADS)

    Oliver, Neus; Jüngling, Thomas; Fischer, Ingo

    2015-03-01

    We experimentally study consistency properties of a semiconductor laser in response to a coherent optical drive originating from delayed feedback. The laser is connected to a short and a long optical fiber loop, switched such that only one is providing input to the laser at a time. This way, repeating the exact same optical drive twice, we find consistent or inconsistent responses depending on the pump parameter and we relate the kind of response to strong and weak chaos. Moreover, we are able to experimentally determine the sub-Lyapunov exponent, underlying the consistency properties.

  2. Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

    PubMed

    Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

    2012-09-01

    In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

  3. On the output characteristics of a semiconductor optical amplifier driven by an ultrafast optical time division multiplexing pulse train

    NASA Astrophysics Data System (ADS)

    Zoiros, K. E.; Chasioti, R.; Koukourlis, C. S.; Houbavlis, T.

    2007-03-01

    A comprehensive theoretical analysis of a semiconductor optical amplifier (SOA) that is subject to an ultrafast optical time division multiplexing pulse stream is presented with the help of a simple but efficient model developed for this purpose. The model combines the necessary set of mathematical equations with the appropriate simplifying assumptions to describe in the time domain gain saturation and recovery for the case of multiple incoming pulses. In this manner, analytical expressions can be obtained for the power and chirp profile of the amplified pulses, essentially extending the work that has been performed for a single pulse only. This allows to identify the critical operational parameters and to investigate and evaluate their effect on these two output characteristics. The derived simulation curves are thoroughly studied to specify the limitations imposed on the SOA small signal gain and carrier lifetime as well as on the full-width at half-maximum (FWHM) and energy of the input pulses and, based on a series of logical arguments, to extract useful rules concerning their selection so as to achieve improved performance with respect to the practical applications of all-optical switching and pulse compression. The obtained results indicate that due to the continuous insertion of pulses, the requirements for the SOA small signal gain and the input pulse energy are stringent than those for the case of isolated pulse amplification. The combination of these two parameters determines also the regime in which the amplifier must be biased to operate in order to ensure distortionless pulse amplification and enhanced chirp for efficient pulse compression and it has been found that low saturation is necessary for the former case whilst heavy saturation for the latter. The scopes of the corresponding requirements for the carrier lifetime and the FWHM are also tight but to a less extent and can be simply satisfied with the available photonics technology. These results

  4. Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors.

    PubMed

    Romeira, Bruno; Javaloyes, Julien; Ironside, Charles N; Figueiredo, José M L; Balle, Salvador; Piro, Oreste

    2013-09-01

    We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics. PMID:24103966

  5. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  6. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  7. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  8. Optical cavity furnace for semiconductor wafer processing

    DOEpatents

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  9. Optical limiting in semiconductor-doped glasses

    NASA Astrophysics Data System (ADS)

    Bindra, K. S.; Oak, S. M.; Rustagi, K. C.

    1996-02-01

    We report optical limiting at 527 nm in two Schott semiconductor-doped glasses OG530 and OG515. These two glasses show quite contrasting nonlinear optical behaviour. The glass OG515 shows strong clamping while OG530 shows no clamping in optical limiting inspite of having much larger nonlinear refractive index. Similarly OG530 exhibits saturation of absorption while OG515 does not.

  10. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  11. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1996-08-20

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  12. Engineering optical properties of semiconductor metafilm superabsorbers

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2016-04-01

    Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials' properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.

  13. Optical processing for semiconductor device fabrication

    NASA Technical Reports Server (NTRS)

    Sopori, Bhushan L.

    1994-01-01

    A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

  14. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1994-01-01

    Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

  15. Investigation of semiconductor clad optical waveguides

    NASA Technical Reports Server (NTRS)

    Batchman, T. E.; Carson, R. F.

    1985-01-01

    A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

  16. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1995-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  17. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  18. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1998-06-30

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  19. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1998-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  20. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  1. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  2. Electrically driven optical metamaterials

    NASA Astrophysics Data System (ADS)

    Le-van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-06-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors.

  3. Electrically driven optical metamaterials.

    PubMed

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-06-22

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors.

  4. Electrically driven optical metamaterials.

    PubMed

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-01-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors. PMID:27328976

  5. Electrically driven optical metamaterials

    PubMed Central

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-01-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors. PMID:27328976

  6. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  7. Fibre-Optic Semiconductor Temperature Gage

    NASA Technical Reports Server (NTRS)

    Sharma, M.

    1982-01-01

    "Safe" temperature gage for explosive liquids is based on optical transmission. Semiconductor crystal inserted between input and output optical fibers is temperature-sensing element in a new approach to measuring temperature of cryogens. Since no electrical components are immersed in liquid, new sensor minimizes danger of electrically ignited explosions in hazardous cryogens such as oxygen and hydrogen. Gage also useful for handling noncryogenic liquids in aircraft, automobiles, boats and water tanks.

  8. Optical-fiber-coupled optical bistable semiconductor lasers

    SciTech Connect

    Zhing Lichen; Tang Yunxin; Qin Ying; Guo Yili

    1986-12-01

    A compact, low input power optical bistable device, consisting of a photodetector, an optical fiber directional coupler, and a semiconductor laser diode, was presented. The principle is described graphically to explain the observed effects such as hysteresis, differential operational gain and memory functions.

  9. Magneto-Optical Characterization of Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Agool, Ibrahim R.

    Available from UMI in association with The British Library. The subject matter of this thesis lies within the area of the physics of semiconductor crystals and more particularly is concerned with the characterization of compound semiconductors using the magneto-optical excitation studies for their importance in the field of device technology. In the first part of this thesis a full study is reported for bulk indium phosphide which is important as substrate material for device fabrication. Measurements have shown that the MCD-ODMR technique is a powerful tool in the investigation of ground state transitions of bulk substrate semiconductors. It has also been shown that the optical technique can be used to explore native defects and transition metal ions in semiconductors. It is also shown in the thesis that an important method used in the characterization of semiconductor superlattices is the use of CO_2 optically pumped far-infrared lasers for studies in quantum wells. This method described as optically detected cyclotron resonance (ODCR), where FIR induced changes in luminescence intensity at resonance has allowed the investigation of non-parabolicity and subband structure for both conduction and valence bands in GaAs. ODCR results at FIR frequencies are compared with measurements performed at microwave frequencies. We have demonstrated that the sensitivity and resolution of FIR-ODCR allows the investigation of multilayer (low dimensional) GaAs/GaAlAs systems with different well widths, where one can monitor the emission from each well independently and examine the effective mass versus well thickness. For the first time we have observed the exchange interaction between donor and acceptor pairs. A Hall Effect system is described for the electrical characterization of doped ZnSe grown at Heriot-Watt University using molecular beam epitaxy (MBE) for new optoelectronic devices such as blue light emitting diodes and blue lasers.

  10. Optical Biosensors Based on Semiconductor Nanostructures

    PubMed Central

    Martín-Palma, Raúl J.; Manso, Miguel; Torres-Costa, Vicente

    2009-01-01

    The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented. PMID:22346691

  11. Optical injection in semiconductor ring lasers

    SciTech Connect

    Coomans, W.; Beri, S.; Sande, G. Van der; Gelens, L.; Danckaert, J.

    2010-03-15

    We theoretically investigate optical injection in semiconductor ring lasers and disclose several dynamical regimes. Through numerical simulations and bifurcation continuation, two separate parameter regions in which two different injection-locked solutions coexist are revealed, in addition to a region in which a frequency-locked limit cycle coexists with an injection-locked solution. Finally, an antiphase chaotic regime without the involvement of any carrier dynamics is revealed. Parallels are drawn with the onset of chaos in the periodically forced Duffing oscillator.

  12. Toward a photoconducting semiconductor RF optical fiber antenna array.

    PubMed

    Davis, R; Rice, R; Ballato, A; Hawkins, T; Foy, P; Ballato, J

    2010-09-20

    Recently, optical fibers comprising a crystalline semiconductor core in a silica cladding have been successfully drawn by a conventional drawing process. These fibers are expected to exhibit a photoconductive response when illuminated by photons more energetic than the band gap of the core. In the photoconducting state, such a fiber can be expected to support driven RF currents so as to function as an antenna element, much as a plasma antenna. In this paper, we report the first device-related results on a crystalline semiconductor core optical fiber potentially useful in a photoconducting optical fiber antenna array; namely, optically induced changes to the electrical conductivity of a glass-clad germanium-core optical fiber. Since DC photoconduction measurements were masked by a photovoltaic effect, RF measurements at 5 MHz were used to determine the magnitude of the induced photoconductive effect. The observed photoconductivity, though not large in the present experiment, was comparable to that measured for the bulk crystals from which the fibers were drawn. The absorbed pumping light generated photo-carriers, thereby transforming the core from a dielectric material to a conductor. This technology could thus enable a class of transient antenna elements useful in low observable and reconfigurable antenna array applications.

  13. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  14. Optical Stark effect in 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Sie, Edbert J.; McIver, James W.; Lee, Yi-Hsien; Fu, Liang; Kong, Jing; Gedik, Nuh

    2016-05-01

    Semiconductors that are atomically thin can exhibit novel optical properties beyond those encountered in the bulk compounds. Monolayer transition-metal dichalcogenides (TMDs) are leading examples of such semiconductors that possess remarkable optical properties. They obey unique selection rules where light with different circular polarization can be used for selective photoexcitation at two different valleys in the momentum space. These valleys constitute bandgaps that are normally locked in the same energy. Selectively varying their energies is of great interest for applications because it unlocks the potential to control valley degree of freedom, and offers a new promising way to carry information in next-generation valleytronics. In this proceeding paper, we show that the energy gaps at the two valleys can be shifted relative to each other by means of the optical Stark effect in a controllable valley-selective manner. We discuss the physics of the optical Stark effect, and we describe the mechanism that leads to its valleyselectivity in monolayer TMD tungsten disulfide (WS2).

  15. Recent advances in optically pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chilla, Juan; Shu, Qi-Ze; Zhou, Hailong; Weiss, Eli; Reed, Murray; Spinelli, Luis

    2007-02-01

    Optically pumped semiconductor lasers offer significant advantages with respect to all traditional diode-pumped solid state lasers (including fiber lasers) in regards to wavelength flexibility, broad pump tolerance, efficient spectral and spatial brightness conversion and high power scaling. In this talk we will describe our recent progress in the lab and applying this technology to commercial systems. Results include diversified wavelengths from 460 to 570nm, power scaling to >60W of CW 532nm, and the launch of a low cost 5W CW visible source for forensic applications.

  16. Glass-clad semiconductor core optical fibers

    NASA Astrophysics Data System (ADS)

    Morris, Stephanie Lynn

    Glass-clad optical fibers comprising a crystalline semiconductor core have garnered considerable recent attention for their potential utility as novel waveguides for applications in nonlinear optics, sensing, power delivery, and biomedicine. As research into these fibers has progressed, it has become evident that excessive losses are limiting performance and so greater understanding of the underlying materials science, coupled with advances in fiber processing, is needed. More specifically, the semiconductor core fibers possess three performance-limiting characteristics that need to be addressed: (a) thermal expansion mismatches between crystalline core and glass cladding that lead to cracks, (b) the precipitation of oxide species in the core upon fiber cooling, which results from partial dissolution of the cladding glass by the core melt, and (c) polycrystallinity; all of which lead to scattering and increased transmission losses. This dissertation systematically studies each of these effects and develops both a fundamental scientific understanding of and practical engineering methods for reducing their impact. With respect to the thermal expansion mismatch and, in part, the dissolution of oxides, for the first time to our knowledge, oxide and non-oxide glass compositions are developed for a series of semiconductor cores based on two main design criteria: (1) matching the thermal expansion coefficient between semiconductor core and glass cladding to minimize cracking and (2) matching the viscosity-temperature dependences, such that the cladding glass draws into fiber at a temperature slightly above the melting point of the semiconductor in order to minimize dissolution and improve the fiber draw process. The x[Na 2O:Al2O3] + (100 - 2x)SiO2 glass compositional family was selected due to the ability to tailor the glass properties to match the aforementioned targets through slight variations in composition and adjusting the ratios of bridging and non-bridging oxygen

  17. Nonuniform carrier distribution in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Evankow, Joseph David, Jr.

    This work discusses the experimental results and theoretical analysis of the longitudinal distribution of the spontaneous emission, amplified spontaneous emission, hole-electron pairs, and gain in semiconductor optical amplifiers. A novel, yet simple, technique was developed enabling, for the first time, the measurement of these distributions. This was accomplished with a high degree of spatial resolution using a single-mode micro-lensed fiber tip positioned perpendicular to the active region and moved longitudinally along the stripe. The cornerstone of this study centers on the theoretical analysis of the small portion of the isotropic spontaneous emission, emanating from the optical cavity, which is captured by the lensed fiber. Spectral as well as integrated power measurements were made along the length of the cavity. These spectral and integrated power measurements provide a direct link to the carrier concentration and gain along the optical cavity. The distribution of this spontaneous emission along the amplifier, and its relationship to other parameters, provide information about the carriers. Since the common mode of operation for linear optical amplifiers is deep in saturation, the devices in this study were analyzed in regimes significantly below the small-signal gain. While large carrier density non- uniformity occur with output powers equal to or greater than Psat, a significant amount can occur in amplifiers even with small input signals. In these amplifiers, the higher carder concentrations produce much higher internal gain coefficients making them more prone to non-uniform carrier density distributions. Moreover, even in semiconductor lasers, where the carrier concentration and the gain are pinned at the onset of lasing to rather pedestrian levels (approximately 1 × 1018 cm-3 and of 3 dB, respectively), previous theoretical analysis for more than a decade postulated that a significant spatial distribution occur. These measurements and analysis

  18. An integrated semiconductor device enabling non-optical genome sequencing.

    PubMed

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-21

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome. PMID:21776081

  19. A Low-Noise Semiconductor Optical Amplifier

    SciTech Connect

    Ratowsky, R.P.; Dijaili, S.; Kallman, J.S.; Feit, M.D.; Walker, J.

    1999-03-23

    Optical amplifiers are essential devices for optical networks, optical systems, and computer communications. These amplifiers compensate for the inevitable optical loss in long-distance propagation (>50 km) or splitting (>10x). Fiber amplifiers such as the erbium-doped fiber amplifier have revolutionized the fiber-optics industry and are enjoying widespread use. Semiconductor optical amplifiers (SOAs) are an alternative technology that complements the fiber amplifiers in cost and performance. One obstacle to the widespread use of SOAs is the severity of the inevitable noise output resulting from amplified spontaneous emission (ASE). Spectral filtering is often used to reduce ASE noise, but this constrains the source spectrally, and improvement is typically limited to about 10 dB. The extra components also add cost and complexity to the final assembly. The goal of this project was to analyze, design, and take significant steps toward the realization of an innovative, low-noise SOA based on the concept of ''distributed spatial filtering'' (DSF). In DSF, we alternate active SOA segments with passive free-space diffraction regions. Since spontaneous emission radiates equally in all directions, the free-space region lengthens the amplifier for a given length of gain region, narrowing the solid angle into which the spontaneous emission is amplified [1,2]. Our innovation is to use spatial filtering in a differential manner across many segments, thereby enhancing the effect when wave-optical effects are included [3]. The structure quickly and effectively strips the ASE into the higher-order modes, quenching the ASE gain relative to the signal.

  20. Optical effects of spin currents in semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Jing

    2011-03-01

    BANG-FEN ZHU, Department of Physics and Institute of Advanced Study, Tsinghua University, REN-BAO LIU, Department of Physics, The Chinese University of Hong Kong -- We predict the linear and second-order nonlinear optical effects of spin currents in semiconductors, based on systematic symmetry analysis and microscopic calculations with realistic models [1, 2]. By an analogue to the Ampere effect and Oersted effect, we conceived and verified that a spin current can be coupled to a ``photon spin curren'' carried by a polarized light beam, which causes sizeable Faraday rotation without involving net magnetization. Furthermore, a spin current can have a strong second-order nonlinear optical effect with unique polarization-dependence due to the special symmetry properties of the spin current. In particular, for a longitudinal spin current, in which the spins point parallel or anti-parallel to the current direction is a chiral quantity, a chiral sum-frequency effect will be induced. The second-order optical effects of spin currents have been experimentally verified immediately after the theoretical prediction. These discoveries represent new phenomena in magneto-optics, with potential spin-photonic applications. They bring new opportunities to research of spintronics and may also facilitate research of topological insulators where the edge states form pure spin currents. This work was supported by the NSFC Grant Nos.10574076, 10774086, and the Basic Research Program of China Grant 2006CB921500, Hong Kong RGC HKU 10/CRF/08 and Hong Kong GRF CUHK 402207.

  1. Optical correlators with fast updating speed using photorefractive semiconductor materials

    NASA Technical Reports Server (NTRS)

    Gheen, Gregory; Cheng, Li-Jen

    1988-01-01

    The performance of an updatable optical correlator which uses a photorefractive semiconductor to generate real-time matched filters is discussed. The application of compound semiconductors makes possible high-speed operation and low optical input intensities. The Bragg diffraction is considered, along with the speed and power characteristics of these materials. Experimental results on photorefractive GaAs are presented.

  2. Variable Gain Semiconductor Optical Linear Amplifier (OLA)

    NASA Astrophysics Data System (ADS)

    Michie, W. Craig; Kelly, Tony; Tomlinson, Andy; Andonovic, Ivan

    2002-12-01

    The semiconductor optical amplifier (SOA) is a versatile component that can be deployed to meet the expanding applications associated with the introduction of additional functionalities at the optical level in wavelength division multiplexed systems. The future network requires low cost, small footprint, directly controllable amplification throughout the different application layers from long haul through to metro; the intrinsic size and integration capability advantages will ensure that the SOA plays a key role in this evolution. In multi-wavelength gating/amplification applications the gain dynamics, oscillating at timescales comparable to that of the data which is being amplified, introduce issues of pattern dependent waveform distortion (patterning) in single channel, and inter-channel cross-talk in multi-wavelength cases which require management through careful SOA design and understanding of the network application scenarios. In this paper, an optical linear amplifier (OLA) architecture with the unique capability to provide variable gain whilst maintaining linear operation at high output saturation powers will be described. Initial characterisation results for the OLA will be presented.

  3. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  4. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  5. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

    PubMed

    Wang, Ping; Yuan, Ying; Zhao, Chao; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Li, Xinzheng; Zhang, Xixiang; Shen, Bo

    2016-02-10

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

  6. Phase noise reduction in semiconductor lasers by optical negative feedback

    NASA Astrophysics Data System (ADS)

    Yasaka, Hiroshi; Aoyama, Konosuke; Yokota, Nobuhide

    2016-04-01

    Phase noise of a single mode semiconductor laser is reduced drastically by introducing a newly proposed optical negative feedback scheme. Proof-of-concept experiment confirms that the spectral linewidth of a semiconductor laser can be reduced to 1/1,000 successfully by applying the scheme.

  7. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  8. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  9. Tapered rib fiber coupler for semiconductor optical devices

    DOEpatents

    Vawter, Gregory A.; Smith, Robert Edward

    2001-01-01

    A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

  10. Semiconductor optical fibres for infrared applications: A review

    NASA Astrophysics Data System (ADS)

    Peacock, Anna C.; Healy, Noel

    2016-10-01

    Over the last decade a new class of optical fibre has emerged that incorporates semiconductor materials within the core. These fibres are rich in optoelectronic functionality and offer extended transmission bands across the infrared spectral region so that their application potential is vast. Various fabrication methods have been developed to produce fibres with a range of unary and compound semiconductor core materials, which can be either amorphous or crystalline in form. This review discusses the main fabrication procedures and the infrared optical properties of the semiconductor fibres that have been fabricated to date, then takes a look at the future prospects of this exciting new technology.

  11. Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2014-02-01

    The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

  12. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  13. Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

  14. Frequency chirping in semiconductor-optical fiber ring laser

    SciTech Connect

    Zhang, Jiangping; Ye, Peida )

    1990-01-01

    In this letter, a complete small-signal analysis for frequency chirping in the semiconductor-optical fiber ring laser is presented. It shows that chirp-to-power ratio (CPR) strongly depends on the junction phase shift, the optical coupling, and the phase detuning between two cavities, especially if the modulation frequency is below the gigahertz range. 7 refs.

  15. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  16. Multidimensional coherent optical spectroscopy of semiconductor nanostructures: a review

    NASA Astrophysics Data System (ADS)

    Nardin, Gaël

    2016-02-01

    Multidimensional coherent optical spectroscopy (MDCS) is an elegant and versatile tool to measure the ultrafast nonlinear optical response of materials. Of particular interest for semiconductor nanostructures, MDCS enables the separation of homogeneous and inhomogeneous linewidths, reveals the nature of coupling between resonances, and is able to identify the signatures of many-body interactions. As an extension of transient four-wave mixing (FWM) experiments, MDCS can be implemented in various geometries, in which different strategies can be used to isolate the FWM signal and measure its phase. I review and compare different practical implementations of MDCS experiments adapted to the study of semiconductor materials. The power of MDCS is illustrated by discussing experimental results obtained on semiconductor nanostructures such as quantum dots, quantum wells, microcavities, and layered semiconductors.

  17. Chirp-enhanced fast light in semiconductor optical amplifiers.

    PubMed

    Sedgwick, F G; Pesala, Bala; Uskov, Alexander V; Chang-Hasnain, C J

    2007-12-24

    We present a novel scheme to increase the THz-bandwidth fast light effect in semiconductor optical amplifiers and increase the number of advanced pulses. By introducing a linear chirp to the input pulses before the SOA and recompressing at the output with an opposite chirp, the advance-bandwidth product reached 3.5 at room temperature, 1.55 microm wavelength. This is the largest number reported, to the best of our knowledge, for a semiconductor slow/fast light device.

  18. Thermally robust semiconductor optical amplifiers and laser diodes

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  19. Emergence of transverse spin in optical modes of semiconductor nanowires.

    PubMed

    Alizadeh, M H; Reinhard, Björn M

    2016-04-18

    The transverse spin angular momentum of light has recently received tremendous attention as it adds a new degree of freedom for controlling light-matter interactions. In this work we demonstrate the generation of transverse spin angular momentum by the weakly-guided mode of semiconductor nanowires. The evanescent field of these modes in combination with the transversality condition rigorously accounts for the occurrence of transverse spin angular momentum. The intriguing and nontrivial spin properties of optical modes in semiconductor nanowires are of high interest for a broad range of new applications including chiral optical trapping, quantum information processing, and nanophotonic circuitry. PMID:27137285

  20. Integrated semiconductor twin-microdisk laser under mutually optical injection

    SciTech Connect

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  1. Evaluation and testing of semiconductor laser reliability in optic system

    NASA Astrophysics Data System (ADS)

    Tang, Wenyan; Fan, Xianguang; Sun, Heyi

    2007-01-01

    In order to improve the performance of an optic system, a new evaluation and testing methodology for the light source which uses semiconductor laser is presented. A new system, combining high accuracy source and measure capabilities for pulsed testing, is developed to achieve the aim of automatic measurement of Light-Current-Power (LIV) for semiconductor laser. The test can provide customer with L-I, V-I curves and other correlative parameters, such as the threshold current and slope efficiency, and so on. Meanwhile, the change of environment temperature versus lasing wavelength under pulse injection is discussed, and the relationship between the lasing wavelength and the width and cycle of injection pulse is obtained. The temperature character of packaged laser unit is measured conveniently. Making use of the above examined curves and parameters, the reliability of semiconductor laser and quality of device can be compared directly and evaluated accurately. The technique is successfully applied for the evaluation of semiconductor laser reliability.

  2. Optical and electronic properties of some semiconductors from energy gaps

    NASA Astrophysics Data System (ADS)

    Tripathy, Sunil K.; Pattanaik, Anup

    2016-03-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.

  3. Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

    NASA Astrophysics Data System (ADS)

    Li, Yuan; Yi, Yuanping; Coropceanu, Veaceslav; Brédas, Jean-Luc

    2014-12-01

    We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply bandlike transport.

  4. Semiconductor optoelectronic devices for free-space optical communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  5. Invited Article: Four-mode semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wen, He; Alahmadi, Yousef; LiKamWa, Patrick; Xia, Cen; Carboni, Christian; Li, Guifang

    2016-10-01

    We demonstrate the first few-mode semiconductor optical amplifier (FM SOA) that supports up to four waveguide modes. We show that each of the modes are confined to the waveguide, overlapping the quantum wells with approximately the same amount, leading to equalized gain for each of the four waveguide modes.

  6. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  7. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  8. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  9. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  10. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    SciTech Connect

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  11. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  12. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    SciTech Connect

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  13. Optical velocimeters for moving surfaces using gas and semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya.; Dubnistshev, Yu. N.; Meledin, V. G.

    1990-10-01

    A differential arrangement using a laser for the measurement of the velocity of moving surfaces is discussed. Configurations of optical velocimeters with diffraction beam-splitters are shown not to be critical on the wavelength stability of a semiconductor laser. Laser meters measuring the velocity and length of rolled stock have been built on the basis of the devices considered.

  14. Linear semiconductor optical amplifiers for amplification of advanced modulation formats.

    PubMed

    Bonk, R; Huber, G; Vallaitis, T; Koenig, S; Schmogrow, R; Hillerkuss, D; Brenot, R; Lelarge, F; Duan, G-H; Sygletos, S; Koos, C; Freude, W; Leuthold, J

    2012-04-23

    The capability of semiconductor optical amplifiers (SOA) to amplify advanced optical modulation format signals is investigated. The input power dynamic range is studied and especially the impact of the SOA alpha factor is addressed. Our results show that the advantage of a lower alpha-factor SOA decreases for higher-order modulation formats. Experiments at 20 GBd BPSK, QPSK and 16QAM with two SOAs with different alpha factors are performed. Simulations for various modulation formats support the experimental findings.

  15. Magneto-optical studies of compound semiconductors

    SciTech Connect

    Jones, E.D.; Klem, J.F.; Lyo, S.K.

    1994-09-01

    A simultaneous determination of both the conduction and valence-band dispersion curves (and masses) from a single compound semiconductor quantum-well structure using magnetoluminescence is discussed. Data from InGaAs/GaAs strained-single-quantum wells and GaAs/AlGaAs lattice matched quantum wells are presented. The conduction bands are found to be parabolic for densities approaching densities of 1 {times} 10{sup 12} cm{sup {minus}2}. However, the valence bands are highly nonparabolic and strongly affected by heavy-hole light-hole interactions.

  16. Integrated superconducting detectors on semiconductors for quantum optics applications

    NASA Astrophysics Data System (ADS)

    Kaniber, M.; Flassig, F.; Reithmaier, G.; Gross, R.; Finley, J. J.

    2016-05-01

    Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit nonclassical states of light for distributed photon-based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realize highly efficient and ultra-fast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20 % for ~4 nm thin films and single-photon timing resolutions <72 ps. We discuss the integration of such detectors into quantum dot-loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a linewidth <15 μeV displaced by 1 mm from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported.

  17. Optical Fano resonance of an individual semiconductor nanostructure

    NASA Astrophysics Data System (ADS)

    Fan, Pengyu; Yu, Zongfu; Fan, Shanhui; Brongersma, Mark L.

    2014-05-01

    Fano resonances with a characteristic asymmetric line shape can be observed in light scattering, transmission and reflection spectra of resonant optical systems. They result from interference between direct and indirect, resonance-assisted pathways. In the nanophotonics field, Fano effects have been observed in a wide variety of systems, including metallic nanoparticle assemblies, metamaterials and photonic crystals. Their unique properties find extensive use in applications, including optical filtering, polarization selectors, sensing, lasers, modulators and nonlinear optics. We report on the observation of a Fano resonance in a single semiconductor nanostructure, opening up opportunities for their use in active photonic devices. We also show that Fano-resonant semiconductor nanostructures afford the intriguing opportunity to simultaneously measure the far-field scattering response and the near-field energy storage by extracting photogenerated charge. Together they can provide a complete experimental characterization of this type of resonance.

  18. Testing methodologies and systems for semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  19. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  20. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOEpatents

    Hui, Rongqing; Jiang,Hong-Xing; Lin, Jing-Yu

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  1. Optically Loaded Semiconductor Quantum Memory Register

    NASA Astrophysics Data System (ADS)

    Kim, Danny; Kiselev, Andrey A.; Ross, Richard S.; Rakher, Matthew T.; Jones, Cody; Ladd, Thaddeus D.

    2016-02-01

    We propose and analyze an optically loaded quantum memory that exploits capacitive coupling between self-assembled quantum-dot molecules and electrically gated quantum-dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and outline both its operation and fabrication. We provide self-consistent Poisson-Schrödinger simulations to establish the design viability, to refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.

  2. Photovoltaic driven multiple quantum well optical modulator

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph (Inventor)

    1990-01-01

    Multiple quantum well (MQW) structures (12) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10). The optically-addressed SLM comprises a vertical stack of quantum well layers (12a) within the penetration depth of an optical write signal 18, a plurality of space charge barriers (12b) having predetermined tunneling times by control of doping and thickness. The material comprising the quantum well layers has a lower bandgap than that of the space charge barrier layers. The write signal modulates a read signal (20). The modulation sensitivity of the device is high and no external voltage source is required. In a preferred embodiment, the SLM having interleaved doped semiconductor layers for driving the MQW photovoltaically is characterized by the use of a shift analogous to the Moss-Burnstein shift caused by the filling of two-dimensional states in the multiple quantum wells, thus allowing high modulation sensitivity in very narrow wells. Arrays (30) may be formed with a plurality of the modulators.

  3. Optical signatures of defects in nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew

    2012-02-01

    Despite successful commercialization of GaN-based light emitting diodes (LEDs) and high frequency transistors, crystal defects continue to have a strong and often undesired impact on the opto-electronic properties of the III-Nitride family of materials. Fully realizing the potential of this fascinating materials system requires a better understanding of the physical origin of defects, their dependence on both substrate quality and epitaxial growth conditions, and their influence on electrical and optical properties. This talk will discuss the use of deep level optical spectroscopy (DLOS) to quantitatively study defect states in GaN-based materials. As a photocapacitance technique, DLOS is able to probe defect levels that are otherwise inaccessible to thermally-stimulated defect spectroscopies in wide band gap materials, such as the III-Nitrides. DLOS quantifies both the energy level and density of defects and probes defect states with nanoscale depth resolution. Beyond the canonical application of DLOS to thin films, this talk will describe new developments of DLOS to quantitatively study defect states in a wide variety of structures with nanoscale dimensionality, including InGaN/GaN multi-quantum wells and AlGaN/GaN core-shell nanowires. The microscopic origin of observed defect states and their influence on the electrical and optical properties of GaN-based LEDs and nanowire devices will be discussed. The reported studies establish DLOS as a critical technique for nanoscale dimensional defect metrology that is able to advance the development of conventional and emerging opto-electronic devices.

  4. Optical phase conjugation in semiconductor-doped glasses

    NASA Astrophysics Data System (ADS)

    Roussignol, P.; Ricard, D.; Rustagi, K. C.; Flytzanis, C.

    1985-08-01

    We have studied optical phase conjugation in two types of semiconductor-doped glasses. Corning 3.68 and Schott OG 530 at λ = 0.532 μm using picosecond pulses. We observe a slow nonlinearity in agreement with the slow decay of luminescence. The saturation of the reflectivity is strongly correlated with the absorption saturation of these glasses and may be interpreted in terms of a three-level system model.

  5. Static gain saturation in quantum dot semiconductor optical amplifiers.

    PubMed

    Meuer, Christian; Kim, Jungho; Laemmlin, Matthias; Liebich, Sven; Capua, Amir; Eisenstein, Gadi; Kovsh, Alexey R; Mikhrin, Sergey S; Krestnikov, Igor L; Bimberg, Dieter

    2008-05-26

    Measurements of saturated amplified spontaneous emission-spectra of quantum dot semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot ground state population from excited states. This saturation behavior is perfectly modeled by a rate equation model. We examined experimentally the dependence of saturation on the drive current and the saturating optical pump power as well as on the pump wavelength. A coherent noise spectral hole is observed with which we assess dynamical properties and propose optimization of the SOA operating parameters for high speed applications.

  6. Transient optical properties of semiconductors under femtosecond x-ray irradiation

    NASA Astrophysics Data System (ADS)

    Tkachenko, Victor; Medvedev, Nikita; Li, Zheng; Piekarz, Przemysław; Ziaja, Beata

    2016-04-01

    Semiconductors under femtosecond x-ray irradiation are transiently excited to nonequilibrium states. This can lead to observable material modifications. During the excitation and relaxation dynamics, optical properties of the solid are changing, affected by both transient electron excitation as well as the evolution of the atomic structure. In this paper we apply a unified hybrid model to trace these two effects. Transient evolution of the optical properties is calculated within the transferable tight-binding approach. The presented methodology of calculation of the complex dielectric function proves to be capable of describing changes in the optical parameters during the phase transitions, when the solids are driven out of equilibrium by intense laser pulses, in a reasonable agreement with experiments.

  7. Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ou, Yu-Sheng; Chiu, Yi-Hsin; Harmon, N. J.; Odenthal, Patrick; Sheffield, Matthew; Chilcote, Michael; Kawakami, R. K.; Flatté, M. E.; Johnston-Halperin, E.

    2016-03-01

    We demonstrate that electron spin relaxation in GaAs in the proximity of a Fe /MgO layer is dominated by interaction with an exchange-driven hyperfine field at temperatures below 60 K. Temperature-dependent spin-resolved optical pump-probe spectroscopy reveals a strong correlation of the electron spin relaxation with carrier freeze-out, in quantitative agreement with a theoretical interpretation that at low temperatures the free-carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. As the regime of large nuclear inhomogeneity is accessible in these heterostructures for magnetic fields <3 kG , inferences from this result resolve a long-standing and contentious dispute concerning the origin of spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding clarifies the importance of future experiments probing the time-dependent exchange interaction at a ferromagnet-semiconductor interface and its consequences for spin dissipation and transport during spin pumping.

  8. Ultrafast Optical Spin Echo for Electron Spins in Semiconductors

    SciTech Connect

    Clark, Susan M.; Fu, Kai-Mei C.; Zhang Qiang; Ladd, Thaddeus D.; Yamamoto, Yoshihisa; Stanley, Colin

    2009-06-19

    Spin-based quantum computing and magnetic resonance techniques rely on the ability to measure the coherence time T{sub 2} of a spin system. We report on the experimental implementation of all-optical spin echo to determine the T{sub 2} time of a semiconductor electron-spin system. We use three ultrafast optical pulses to rotate spins an arbitrary angle and measure an echo signal as the time between pulses is lengthened. Unlike previous spin-echo techniques using microwaves, ultrafast optical pulses allow clean T{sub 2} measurements of systems with dephasing times (T{sub 2}*) fast in comparison to the time scale for microwave control. This demonstration provides a step toward ultrafast optical dynamic decoupling of spin-based qubits.

  9. Donor-driven spin relaxation in multivalley semiconductors.

    PubMed

    Song, Yang; Chalaev, Oleg; Dery, Hanan

    2014-10-17

    The observed dependence of spin relaxation on the identity of the donor atom in n-type silicon has remained without explanation for decades and poses a long-standing open question with important consequences for modern spintronics. Taking into account the multivalley nature of the conduction band in silicon and germanium, we show that the spin-flip amplitude is dominated by short-range scattering off the central-cell potential of impurities after which the electron is transferred to a valley on a different axis in k space. Through symmetry arguments, we show that this spin-flip process can strongly affect the spin relaxation in all multivalley materials in which time-reversal cannot connect distinct valleys. From the physical insights gained from the theory, we provide guidelines to significantly enhance the spin lifetime in semiconductor spintronics devices. PMID:25361275

  10. Donor-driven spin relaxation in multivalley semiconductors.

    PubMed

    Song, Yang; Chalaev, Oleg; Dery, Hanan

    2014-10-17

    The observed dependence of spin relaxation on the identity of the donor atom in n-type silicon has remained without explanation for decades and poses a long-standing open question with important consequences for modern spintronics. Taking into account the multivalley nature of the conduction band in silicon and germanium, we show that the spin-flip amplitude is dominated by short-range scattering off the central-cell potential of impurities after which the electron is transferred to a valley on a different axis in k space. Through symmetry arguments, we show that this spin-flip process can strongly affect the spin relaxation in all multivalley materials in which time-reversal cannot connect distinct valleys. From the physical insights gained from the theory, we provide guidelines to significantly enhance the spin lifetime in semiconductor spintronics devices.

  11. Optical band gaps of organic semiconductor materials

    NASA Astrophysics Data System (ADS)

    Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2016-08-01

    UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

  12. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1987-01-01

    A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

  13. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1988-01-01

    Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

  14. Petahertz optical drive with wide-bandgap semiconductor

    NASA Astrophysics Data System (ADS)

    Mashiko, Hiroki; Oguri, Katsuya; Yamaguchi, Tomohiko; Suda, Akira; Gotoh, Hideki

    2016-08-01

    High-speed photonic and electronic devices at present rely on radiofrequency electric fields to control the physical properties of a semiconductor, which limits their operating speed to terahertz frequencies (1012 Hz ref. ). Using the electric field from intense light pulses, however, could extend the operating frequency into the petahertz regime (1015 Hz ref. ). Here we demonstrate optical driving at a petahertz frequency in the wide-bandgap semiconductor gallium nitride. Few-cycle near-infrared pulses are shown to induce electric interband polarization though a multiphoton process. Dipole oscillations with a periodicity of 860 as are revealed in the gallium nitride electron and hole system by using the quantum interference between the two transitions from the valence and conduction band states, which are probed by an extremely short isolated attosecond pulse with a coherent broadband spectrum. In principle, this shows that the conductivity of the semiconductor can be manipulated on attosecond timescales, which corresponds to instantaneous light-induced switching from insulator to conductor. The resultant dipole frequency reaches 1.16 PHz, showing the potential for future high-speed signal processing technologies based on wide-bandgap semiconductors.

  15. Dynamics and Synchronization of Semiconductor Lasers for Chaotic Optical Communications

    NASA Astrophysics Data System (ADS)

    Liu, Jia-Ming; Chen, How-Foo; Tang, Shuo

    The objective of this chapter is to provide a complete picture of the nonlinear dynamics and chaos synchronization of single-mode semiconductor lasers for chaotic optical communications. Basic concepts and theoretical framework are reviewed. Experimental results are presented to demonstrate the fundamental concepts. Numerical computations are employed for mapping the dynamical states and for illustrating certain detailed characteristics of the chaotic states. Three different semiconductor laser systems, namely, the optical injection system, the optical feedback system, and the optoelectronic feedback system, that are of most interest for high-bit-rate chaotic optical communications are considered. The optical injection system is a nonautonomous system that follows a period-doubling route to chaos. The optical feedback system is a phase-sensitive delayed-feedback autonomous system for which all three known routes, namely, period-doubling, quasiperiodicity, and intermittency, to chaos can be found. The optical feedback system is a phase-insensitive delayed-feedback autonomous system that follows a quasiperiodicity route to chaotic pulsing. Identical synchronization in unidirectionally coupled configurations is the focus of discussions for chaotic communications. For optical injection and optical feedback systems, the frequency, phase, and amplitude of the optical fields of both transmitter and receiver lasers are all locked in synchronism when complete synchronization is accomplished. For the optoelectronic feedback system, chaos synchronization involves neither the locking of the optical frequency nor the synchronization of the optical phase. For both optical feedback and optoelectronic feedback systems, where the transmitter is configured with a delayed feedback loop, anticipated and retarded synchronization can be observed as the difference between the feedback delay time and the propagation time from the transmitter laser to the receiver laser is varied. For a

  16. Density driven structural transformations in amorphous semiconductor clathrates

    DOE PAGES

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with themore » consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.« less

  17. Density driven structural transformations in amorphous semiconductor clathrates

    SciTech Connect

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with the consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.

  18. Integrated semiconductor optical sensors for cellular and neural imaging

    NASA Astrophysics Data System (ADS)

    Levi, Ofer; Lee, Thomas T.; Lee, Meredith M.; Smith, Stephen J.; Harris, James S.

    2007-04-01

    We review integrated optical sensors for functional brain imaging, localized index-of-refraction sensing as part of a lab-on-a-chip, and in vivo continuous monitoring of tumor and cancer stem cells. We present semiconductor-based sensors and imaging systems for these applications. Measured intrinsic optical signals and tissue optics simulations indicate the need for high dynamic range and low dark-current neural sensors. Simulated and measured reflectance spectra from our guided resonance filter demonstrate the capability for index-of-refraction sensing on cellular scales, compatible with integrated biosensors. Finally, we characterized a thermally evaporated emission filter that can be used to improve sensitivity for in vivo fluorescence sensing.

  19. Arnold diffusion in a driven optical lattice.

    PubMed

    Boretz, Yingyue; Reichl, L E

    2016-03-01

    The effect of time-periodic forces on matter has been a topic of growing interest since the advent of lasers. It is known that dynamical systems with 2.5 or more degrees of freedom are intrinsically unstable. As a consequence, time-periodic driven systems can experience large excursions in energy. We analyze the classical and quantum dynamics of rubidium atoms confined to a time-periodic optical lattice with 2.5 degrees of freedom. When the laser polarizations are orthogonal, the system consists of two 1.5 uncoupled dynamical systems. When laser polarizations are turned away from orthogonal, an Arnold web forms and the dynamics undergoes a fundamental change. For parallel polarizations, we find huge random excursions in the rubidium atom energies and significant entanglement of energies in the quantum dynamics. PMID:27078351

  20. Sideband Raman Cooling of Optical Phonons in Semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Kwek, Leong Chuan; Xiong, Qihua

    2014-03-01

    Last century has witnessed a tremendous success of laser cooling technology from trapped atomic ions to solid-state optical refrigeration. As one of the laser cooling techniques, sideband Raman cooling plays an important role in quantum ground state preparation, coherent quantum-state manipulation and quantum phenomena study. However, those studies still limited in trapped atomic ions and cavity optomechanics, which need be cooled it below than 0.1 Kelvin even tens of nano-Kelvin due to very low frequency of phonons from several kHz to GHz. Here we report sideband Raman cooling and heating experiments of longitudinal optical phonon (LOP) with a 6.23 THz in semiconductor ZnTe nano-ribbons. By using of red-sideband laser, we cool the LOP from 225 to 55 Kelvin, corresponding to an average occupation number reduced from 0.36 to 0.005. We also observe a LOPs heating from 230 to 384 Kelvin with a blue-sideband pumping. Our experiment opens a possibility of all solid state quantum applications using semiconductor optical phonon mediated coupling at room temperature. We gratefully acknowledge funding from Singapore NRF, MOE and NTU.

  1. Polarimetric optical fiber sensor using a frequency stabilized semiconductor laser

    SciTech Connect

    Tsuchida, H.; Mitsuhashi, Y.; Ishihara, S. )

    1989-05-01

    The authors discuss the performance of a polarimetric optical fiber sensor for remote temperature measurement improved by the use of a frequency stabilized semiconductor laser. The temperature change is measured from the phase delay between two orthogonally polarized modes in a polarization maintaining fiber. The sensor output signal is demodulated utilizing direct modulation of the laser frequency. The center frequency of the modulated laser is locked to a Fabry-Perot interferometer by controlling the injection current. The minimum detectable temperature change is evaluated experimentally to be less than 0.005{sup 0}C, which is seven times smaller than that obtained with the freerunning laser.

  2. Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions.

    PubMed

    Celano, Thomas A; Hill, David J; Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; McBride, James R; Cahoon, James F

    2016-08-10

    Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds.

  3. Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions.

    PubMed

    Celano, Thomas A; Hill, David J; Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; McBride, James R; Cahoon, James F

    2016-08-10

    Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds. PMID:27459319

  4. Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications

    NASA Technical Reports Server (NTRS)

    Tratt, David M.; Mansour, Kamjou; Menzies, Robert T.; Qiu, Yueming; Forouhar, Siamak; Maker, Paul D.; Muller, Richard E.

    2001-01-01

    The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch

  5. Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

    PubMed Central

    2014-01-01

    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

  6. Coherent Semiconductor Laser Systems For Optical Intersatellite Links

    NASA Astrophysics Data System (ADS)

    Somerset, R. J.; Fletcher, G. D.

    1990-04-01

    Semiconductor laser based optical intersatellite links are attractive for use in both DRS type applications, and as links in the existing satellite-based telecommunications networks (for example between EUTELSAT SMS and INTELSAT IBS business services satellites). Initial ISL experiments will demonstrate direct detection systems using intensity modulation. Coherent systems offer significant improvements over these: the use of frequency shift keying modulation and heterodyne receivers provide significantly improved system sensitivities, which will allow practical systems with reliable laser sources (50 mW CW), and small optical telescopes (20 cm diameter). The SILEX ADD-ON CHANNEL is intended to demonstrate the potential of such systems within the framework of the ESA SILEX program.

  7. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    PubMed Central

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  8. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier.

    PubMed

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-27

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing.

  9. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  10. Coherence optimization of vertical-cavity semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Sanchez, Michael; Wen, Pengyue; Gross, Matthias; Kibar, Osman; Esener, Sadik C.

    2002-06-01

    Vertical cavity semiconductor optical amplifiers (VCSOAs) are attractive devices for use in coherent optical amplification, especially where 2-D amplifier arrays are required. However, the coherence preservation quality of a VCSOA depends strongly on the bias condition, resonant wavelength mismatch, and the optical input power level. We characterize the coherence degree of a VCSOA as a function of these parameters by measuring interference fringe visibility with an interferometer. The dominant factors influencing the contrast of the fringes are the ratio of coherent, stimulated emission photons to amplified spontaneous emission (ASE) photons, and the spectral distortion of the amplified signal. Mostly, the overall gain and the saturation characteristic of the amplifier determine the ratio of stimulated emission to ASE. The spectral distortion of the signal is due to the narrow gain window of the VCSOA, but the effect significantly degrades the visibility only for relatively large wavelength mismatch from the gain peak. Analytic expressions may be used to identify the optimal bias current and optical input power to maximize the amplifier gain and visibility of the interference.

  11. Novel applications of optical techniques to the study of buried semiconductor interfaces

    NASA Technical Reports Server (NTRS)

    Wilson, Barbara A.

    1989-01-01

    Detailed electronic and structural information about buried semiconductor interfaces obtained through application of optical techniques is discussed. The measurements described include the determination of band discontinuities, strain, and disorder associated with semiconductor heterointerfaces. The contactless and nondestructive nature of these optical techniques is particularly important for the study of heterointerfaces which are inherently inaccessible to direct electrical or physical contact.

  12. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  13. Application of semiconductor optical amplifier for mobile radio communications networks based on radio-over-fiber systems

    NASA Astrophysics Data System (ADS)

    Andreev, Vladimir A.; Burdin, Vladimir A.; Volkov, Kirill A.; Dashkov, Michael V.; Bukashkin, Sergei A.; Buzov, Alexander L.; Procopiev, Vladimir I.; Zharkov, Alexander D.

    2016-03-01

    The analysis of semiconductor optical amplifier applications in Radio-over-Fiber systems of telecommunication networks is given. In such systems semiconductor optical amplifier can be used for either amplification, modulation or detection, and also as an universal device.

  14. All-optical mitigation of amplitude and phase-shift drift noise in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Rocha, Peterson; Gallep, Cristiano M.; Conforti, Evandro

    2015-10-01

    An all-optical scheme aimed at minimizing distortions induced by semiconductor optical amplifiers (SOAs) over modulated optical carriers is presented. The scheme employs an additional SOA properly biased to act as a saturated absorber, and thus counteract the distortions induced by the first amplifying device. The scheme here is demonstrated in silico, for 40 and 100 Gb/s (10 and 25 Gbaud, 16 QAM), with reasonable total gain (>20 dB) for symbol error rate below the forward error correction limit.

  15. Ultrafast all-optical NOR gate based on semiconductor optical amplifier and fiber delay interferometer.

    PubMed

    Xu, Jing; Zhang, Xinliang; Liu, Deming; Huang, Dexiu

    2006-10-30

    An ultrafast all-optical logic NOR gate based on a semiconductor optical amplifier (SOA) and a fiber delay interferometer (FDI) is presented. For high-speed input return-to-zero (RZ) signal, nonreturn-to-zero (NRZ) switching windows which satisfy Boolean NOR operation can be formed by properly choosing the delay time and the phase shift of FDI. 40Gb/s NOR operation has been demonstrated successfully with low control optical power. The factors that degrade the NOR operation have been discussed.

  16. Ultrafast all-optical NOR gate based on semiconductor optical amplifier and fiber delay interferometer

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Zhang, Xinliang; Liu, Deming; Huang, Dexiu

    2006-10-01

    An ultrafast all-optical logic NOR gate based on a semiconductor optical amplifier (SOA) and a fiber delay interferometer (FDI) is presented. For high-speed input return-to-zero (RZ) signal, nonreturn-to-zero (NRZ) switching windows which satisfy Boolean NOR operation can be formed by properly choosing the delay time and the phase shift of FDI. 40Gb/s NOR operation has been demonstrated successfully with low control optical power. The factors that degrade the NOR operation have been discussed.

  17. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  18. Analysis of dynamic behavior of semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Quintana, Daniel; Olivares, Ricardo

    2001-08-01

    A study of the transient response of semiconductor optical amplifiers (SOAs) is presented. The gain saturation and recovery times, as well as the pulse distortion due to the cross-gain modulation produced by the bias current and input signal power variations have been evaluated for different scenarios. Observations of the temporal variation of the rate carrier density at the input and output of the amplifier show the effects on gain saturation for different input powers. Gain saturation and saturation-induced inter- channel crosstalk are evaluated. The results show that fast gain dynamic in SOAs. Transient effects of gain saturation and recovery times occur on a time scale of between 500 ps and 1 ns. It is concluded that SOAs are sensible to channel crosstalk in WDM systems operating at high bit rates.

  19. Optical Properties of III-Mn-V Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Burch, Kenneth

    2008-03-01

    We discuss the important role optical studies have played in our understanding of the electronic structure of III-Mn-V ferromagnetic semiconductors. These extensive studies have established the electronic structure is strongly affected by the strength of the exchange between the Mn local moments and the holes they introduce. Particular focus is given to Ga1-xMnxAs, where spectroscopic studies suggest the metallic state is unconventional. Finally, we will detail our recent experiments into the ultrafast manipulation of magnetism on the nanoscale. This work is in collaboration with D.B. Shrekenhamer, E.J. Singley, D.N. Basov (University of California, San Diego) J. Stephens, S. Mack, R.K. Kawakami, D.D. Awschalom(University of California, Santa Barbara), B.L. Sheu, N. Samarth (Pennsylvania State University), F. Chen, A. Azad, J. O'Hara, A.M. Dattelbaum, G. Montano, S. Crooker, and A.J. Taylor (Los Alamos National Laboratory).

  20. Biologically inspired optics: analog semiconductor model of the beetle exoskeleton

    NASA Astrophysics Data System (ADS)

    Buhl, Kaia; Roth, Zachary; Srinivasan, Pradeep; Rumpf, Raymond; Johnson, Eric

    2008-08-01

    Evolution in nature has produced through adaptation a wide variety of distinctive optical structures in many life forms. For example, pigment differs greatly from the observed color of most beetles because their exoskeletons contain multilayer coatings. The green beetle is disguised in a surrounding leaf by having a comparable reflection spectrum as the leaves. The Manuka and June beetle have a concave structure where light incident at any angle on the concave structures produce matching reflection spectra. In this work, semiconductor processing methods were used to duplicate the structure of the beetle exoskeleton. This was achieved by combining analog lithography with a multilayer deposition process. The artificial exoskeleton, 3D concave multilayer structure, demonstrates a wide field of view with a unique spectral response. Studying and replicating these biologically inspired nanostructures may lead to new knowledge for fabrication and design of new and novel nano-photonic devices, as well as provide valuable insight to how such phenomenon is exploited.

  1. Linear and nonlinear optical response of spherical anisotropic semiconductor microcrystallites

    NASA Astrophysics Data System (ADS)

    Ramaniah, Lavanya M.; Nair, Selvakumar V.; Rustagi, Kailash C.

    1989-12-01

    We present a phenomenological theory of the linear and nonlinear optical properties associated with the Fröhlich resonances of an optically anisotropic, spherical semiconductor crystallite. Using the Maxwell-Garnett approach, we calculate the effective dielectric function of a composite medium containing such crystallites. To study the effect of anisotropy, we take CdS and CdSe quantum dots as examples for the inclusions, and use a two-resonance model for the dielectric function. Even for randomly oriented inclusions, the Fröhlich resonances split as a result of anisotropic local-field corrections. At higher laser intensities, absorption saturation leads to bistability or tristability in the optical response of individual crystallites, while the response of the composite medium with randomly oriented inclusions shows multistability, with many intermediate branches. The nonlinear response of such a composite medium also exhibits a new kind of orientation-induced broadening of resonances. We also find that tristability is possible in another kind of inhomogeneous material, viz., a composite medium containing two types of isotropic spherical crystallites.

  2. Radiation-tolerant optical links for the ATLAS semiconductor tracker

    NASA Astrophysics Data System (ADS)

    Matheson, John; Charlton, David G.; Chu, Ming-lee; Dowell, John D.; Galagedera, Senerath; Homer, Roger J.; Hou, Li-Shing; Jovanovic, Predrag; Kundu, Nikhil N.; Lee, Shih-chang; McMahon, Thomas J.; Macwaters, Craig; Mahout, Gilles; Morrissey, Martin; Rudge, Alan; Skubic, Bjorn J.; Teng, Ping-kun; Wastie, Roy; Weidberg, Anthony R.; Wilson, John A.

    2002-09-01

    The Large Hadron Collider (LHC), currently under construction at CERN, Geneva, will collide proton beams of energy 7 TeV. The high luminosity of the machine will lead to a severe radiation environment for detectors such as ATLAS. The ATLAS Semiconductor Tracker (SCT) must be able to tolerate a radiation field equivalent to an ionising dose of 10 Mrad (Si) and a neutron fluence of 2x1014cm-2 (1MeV,Si) over the 10 year lifetime of the experiment. The SCT is instrumented by silicon microstrip detectors and their front-end chips (ABCDs). Data is transferred from, and control signals to, the ABCDs using multimode optical links carrying light at 840 nm. The incoming timing, trigger and control (TTC) link uses biphase mark encoding to send 40 Mbit/s control signals along with a 40 MHz clock down a single fibre. Optical signals are received by a p-i-n diode and decoded by DORIC chips. Data in electrical form from the ABCDs is used to moderate two VCSELs by means of a VCSEL driver chip (VDC). Each detector module carries 12 ABCDs and is served by two optical fibres for data readout and one for TTC signals. There are 4088 such modules within the SCT. The system performance specifications and architecture are described, followed by test results on individual components and complete links. The optical fibre, active optical components, chips, packaging and interconnects have all been qualified to the necessary radiation levels. This has involved studies of total dose effects, single event upset and ageing at elevated temperatures and details of these studies are presented.

  3. Nonlinear semiconductor lasers and amplifiers for all-optical information processing.

    PubMed

    Adams, M J; Hurtado, A; Labukhin, D; Henning, I D

    2010-09-01

    The nonlinear properties of semiconductor lasers and laser amplifiers when subject to optical injection are reviewed and new results are presented for multisection lasers, vertical cavity semiconductor optical amplifiers, and surface-emitting lasers. The main underlying material parameters are outlined and the key design approaches are discussed for both edge-emitting and vertical cavity devices. An overview of theoretical modeling approaches is discussed and a summary of key experimental results is presented. The practical use of optically injected edge-emitting and vertical cavity semiconductor lasers and laser amplifiers is illustrated with examples of applications including, among others, optical logic and chaotic communication.

  4. Linear and Nonlinear Optical Techniques to Characterize Narrow Gap Semiconductors:

    NASA Astrophysics Data System (ADS)

    McClure, Stephen Warren

    Several methods have been developed and used to characterize the narrow gap semiconductors Hg(,1-x)Cd(,x)Te (HgCdTe) (0.20 < x < 0.32) and InSb both in the presence of CO(,2) laser radiation and in the dark. The results have allowed the determination of certain band parameters including the fundamental energy bandgap E(,g) which is directly related to x, the mole fraction of Cd. In the dark, characterization of several different samples of HgCdTe and InSb were carried out by analyzing the temperature dependence of the Hall coefficient and the magnetic field positions of the magnetophonon extrema from which their x-values were determined. The quality of the magnetophonon spectral is also shown to be related to the inhomogeneity (DELTA)x of the HgCdTe samples. One-photon magneto-absorption (OPMA) spectra have been obtained for x (TURN) 0.2 samples of p-HgCdTe thin films and n-HgCdTe bulk samples. Analysis of the OPMA transition energies allows the x-value to be determined to within (DBLTURN)(+OR-)0.001. A method is also discussed which can be used to estimate the sample inhomogeneity (DELTA)x. Nonlinear optical properties of semiconductors are not only scientifically interesting to study, but are also proving to be technologically important as various nonlinear optical devices are being developed. One of the most valuable nonlinear optical characterization method uses two-photon absorption (TPA). Two techniques using TPA processes were developed and used to measure the cut -off wavelength of several different samples of HgCdTe (x (TURN) 0.3) from which x-values were determined to within (DBLTURN)(+OR-)0.0005. Intensity and temperature dependent measurements on impurity and TPA processes have also been carried out and the results are compared with rate equations describing the photo-excited carrier dynamics. These results have yielded important information about the optical and material properties of HgCdTe such as the detection of impurity and trapping levels, TPA

  5. Theoretical and experimental analysis of an optical driven servo system

    NASA Astrophysics Data System (ADS)

    Lu, F.; Wang, X. J.; Huang, J. H.; Liu, Y. F.

    2016-09-01

    An optical driven servo system model based on single-type PLZT ceramic is proposed in this paper. The control equation of the proposed servo system is derived based on the mathematical model of PLZT with coupled multi-physics fields. The parameters of photodeformation of the PLZT actuator during both the illumination phase and light off phase are identified through the static experiment. Then displacement response of optical driven servo system is numerically simulated based on the control equation presented in this paper. After that, the closed-loop control experiment of optical driven servo system based on PLZT single-type ceramic with a simple on-off method is carried out. The experimental results show that the optical driven servo system with simple on-off method can achieve the target displacement by applying UV light to the PLZT actuator. Furthermore, an improved on-off control strategy is proposed to decrease the undesirable fluctuation around the target displacement.

  6. Theoretical and experimental analysis of an optical driven servo system

    NASA Astrophysics Data System (ADS)

    Lu, F.; Wang, X. J.; Huang, J. H.; Liu, Y. F.

    2016-09-01

    An optical driven servo system model based on single-type PLZT ceramic is proposed in this paper. The control equation of the proposed servo system is derived based on the mathematical model of PLZT with coupled multi-physics fields. The parameters of photodeformation of the PLZT actuator during both the illumination phase and light off phase are identified through the static experiment. Then displacement response of optical driven servo system is numerically simulated based on the control equation presented in this paper. After that, the closed-loop control experiment of optical driven servo system based on PLZT single-type ceramic with a simple on–off method is carried out. The experimental results show that the optical driven servo system with simple on–off method can achieve the target displacement by applying UV light to the PLZT actuator. Furthermore, an improved on–off control strategy is proposed to decrease the undesirable fluctuation around the target displacement.

  7. Study of all-optical sampling using a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Chen; Wang, Yongjun; Wang, Lina; Wang, Fu

    2016-08-01

    All-optical sampling is an important research content of all-optical signal processing. In recent years, the application of the semiconductor optical amplifier (SOA) in optical sampling has attracted lots of attention because of its small volume and large nonlinear coefficient. We propose an optical sampling model based on nonlinear polarization rotation effect of the SOA. The proposed scheme has the advantages of high sampling speed and small input pump power, and a transfer curve with good linearity was obtained through simulation. To evaluate the performance of sampling, we analyze the linearity and efficiency of sampling pulse considering the impact of pulse width and analog signal frequency. We achieve the sampling of analog signal to high frequency pulse and exchange the positions of probe light and pump light to study another sampling.

  8. Implantable micro-optical semiconductor devices for optical theranostics in deep tissue

    NASA Astrophysics Data System (ADS)

    Takehara, Hiroaki; Katsuragi, Yuji; Ohta, Yasumi; Motoyama, Mayumi; Takehara, Hironari; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2016-04-01

    Optical therapy and diagnostics using photoactivatable molecular tools are promising approaches in medical applications; however, a method for the delivery of light deep inside biological tissues remains a challenge. Here, we present a method of illumination and detection of light using implantable micro-optical semiconductor devices. Unlike in conventional transdermal light delivery methods using low-energy light (>620 nm or near-infrared light), in our method, high-energy light (470 nm) can also be used for illumination. Implanted submillimeter-sized light-emitting diodes were found to provide sufficient illumination (0.6-4.1 mW/cm2), and a complementary metal-oxide-semiconductor image sensor enabled the detection of fluorescence signals.

  9. Non-adiabatic effects on the optical response of driven systems

    NASA Astrophysics Data System (ADS)

    Fregoso, Benjamin M.; Kolodrubetz, Michael; Moore, Joel

    Periodically driven systems have received renewed interest due to their capacity to engineer non-trivial effective Hamiltonians. A characteristic of such systems is how they respond to weak periodicity-breaking drive, as for example when a laser is pulsed instead of continuous wave. We develop semi-classical equations of motion of a wave packet in the presence of electric and magnetic fields which are turned on non-adiabatically. We then show the emergence of significant corrections to electronic collective excitations and optical responses of topological insulator surface states, Weyl metals and semiconductor mono-chalcogenides.

  10. Fast and Efficient Dynamic WDM Semiconductor Optical Amplifier Model

    NASA Astrophysics Data System (ADS)

    Mathlouthi, Walid; Lemieux, Pascal; Salsi, Massimiliano; Vannucci, Armando; Bononi, Alberto; Rusch, Leslie A.

    2006-11-01

    A novel state-variable model for semiconductor optical amplifiers (SOAs) that is amenable to block diagram implementation of wavelength division multiplexed (WDM) signals and fast execution times is presented. The novel model is called the reservoir model, in analogy with similar block-oriented models for Raman and erbium-doped fiber amplifiers (EDFAs). A procedure is proposed to extract the needed reservoir model parameters from the parameters of a detailed and accurate space-resolved SOA model due to Connelly, which was extended to cope with the time-resolved gain transient analysis. Several variations of the reservoir model are considered with increasing complexity, which allow the accurate inclusion of scattering losses and gain saturation induced by amplified spontaneous emission. It is shown that at comparable accuracy, the reservoir model can be 20 times faster than the Connelly model in single-channel operation; much more significant time savings are expected for WDM operation. The model neglects intraband SOA phenomena and is thus limited to modulation rates per channel not exceeding 10 Gb/s. The SOA reservoir model provides a unique tool with reasonably short computation times for a reliable analysis of gain transients in WDM optical networks with complex topologies.

  11. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optical velocimeter based on a semiconductor laser

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya; Dubnishchev, Yu N.; Meledin, V. G.

    1988-03-01

    It is shown that optical velocimeters using diffraction beam splitters are not critically sensitive to the stability of the emission wavelength of a semiconductor laser. A functional scheme of a semiconductor laser source with systems for stabilization of the temperature and pump current is described. The technical characteristics are given of a semiconductor-laser velocimeter for the determination of the velocity and length of rolling stock.

  12. Dissipation-Induced Symmetry Breaking in a Driven Optical Lattice

    SciTech Connect

    Gommers, R.; Bergamini, S.; Renzoni, F.

    2005-08-12

    We analyze the atomic dynamics in an ac driven periodic optical potential which is symmetric in both time and space. We experimentally demonstrate that in the presence of dissipation the symmetry is broken, and a current of atoms through the optical lattice is generated as a result.

  13. Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

    DOEpatents

    Duncan, Paul G.

    2002-01-01

    Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

  14. All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier.

    PubMed

    Guo, L Q; Connelly, M J

    2006-04-01

    An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.

  15. Optical driven electromechanical transistor based on tunneling effect.

    PubMed

    Jin, Leisheng; Li, Lijie

    2015-04-15

    A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic.

  16. Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Shouting

    Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

  17. Antiphase dynamics in multimode semiconductor lasers with optical feedback

    SciTech Connect

    Masoller, C.; Torre, M. S.; Mandel, Paul

    2005-01-01

    We study the dynamics of multimode semiconductor lasers with optical feedback. Our model takes into account explicitly spatial effects, which are included by considering spatial profiles for N longitudinal modes coupled to the space-dependent gain. We also consider the effect of carrier diffusion. We find that in the weak feedback regime the longitudinal modes display antiphase oscillations that lead to a nearly constant output intensity. This result is largely independent of the value of the diffusion coefficient. For larger feedback we observe in-phase fast oscillations at a frequency close to the relaxation oscillation frequency of the solitary laser. In these two regimes, the total output of the laser has the properties of a single-mode laser for nondispersive applications. We assess the validity of an existing approximation scheme that has dealt with spatial inhomogeneities by expanding the carrier density into a truncated hierarchy of moments. We demonstrate that this approximation is very good when the underlying carrier diffusion is fast, thus leading to a weakly developed carrier grating.

  18. Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Abe, Katsumi; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

    2012-08-01

    We fabricated transparent amorphous oxide semiconductor superlattices composed of In-Ga-Zn-O (a-IGZO) well layers and Ga2O3 (a-Ga2O3) barrier layers, and investigated their optical absorption properties to examine energy quantization in the a-IGZO well layer. The Tauc gap of a-IGZO well layers monotonically increases with decreasing well thickness at ≤5 nm. The thickness dependence of the Tauc gap is quantitatively explained by a Krönig-Penny model employing a conduction band offset of 1.2 eV between the a-IGZO and the a-Ga2O3, and the effective masses of 0.35m0 for the a-IGZO well layer and 0.5m0 for the a-Ga2O3 barrier layer, where m0 is the electron rest mass. This result demonstrates the quantization in the a-IGZO well layer. The phase relaxation length of the a-IGZO is estimated to be larger than 3.5 nm.

  19. Continuously Controlled Optical Band Gap in Oxide Semiconductor Thin Films.

    PubMed

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-03-01

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. Charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques. PMID:26836282

  20. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGES

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  1. Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

    PubMed Central

    2014-01-01

    Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

  2. Laser-driven polyplanar optic display

    SciTech Connect

    Veligdan, J.T.; Biscardi, C.; Brewster, C.; DeSanto, L.; Beiser, L.

    1998-01-01

    The Polyplanar Optical Display (POD) is a unique display screen which can be used with any projection source. This display screen is 2 inches thick and has a matte-black face which allows for high contrast images. The prototype being developed is a form, fit and functional replacement display for the B-52 aircraft which uses a monochrome ten-inch display. The new display uses a 200 milliwatt green solid-state laser (532 nm) as its optical source. In order to produce real-time video, the laser light is being modulated by a Digital Light Processing (DLP) chip manufactured by Texas Instruments, Inc. A variable astigmatic focusing system is used to produce a stigmatic image on the viewing face of the POD. In addition to the optical design, the authors discuss the DLP chip, the optomechanical design and viewing angle characteristics.

  3. Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

    SciTech Connect

    Keay, B.J.; Allen, S.J.; Campman, K.L.

    1995-12-31

    We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process.

  4. Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface

    NASA Astrophysics Data System (ADS)

    Monahan, Nicholas R.; Williams, Kristopher W.; Kumar, Bharat; Nuckolls, Colin; Zhu, X.-Y.

    2015-06-01

    How an electron-hole pair escapes the Coulomb potential at a donor-acceptor interface has been a key issue in organic photovoltaic research. Recent evidence suggests that long-distance charge separation can occur on ultrafast time scales, yet the underlying mechanism remains unclear. Here we use charge transfer excitons (CTEs) across an organic semiconductor-vacuum interface as a model and show that nascent hot CTEs can spontaneously climb up the Coulomb potential within 100 fs. This process is driven by entropic gain due to the rapid rise in density of states with increasing electron-hole separation. In contrast, the lowest CTE cannot delocalize, but undergoes self-trapping and recombination.

  5. Time-domain model of quantum-dot semiconductor optical amplifiers for wideband optical signals.

    PubMed

    Puris, D; Schmidt-Langhorst, C; Lüdge, K; Majer, N; Schöll, E; Petermann, K

    2012-11-19

    We present a novel theoretical time-domain model for a quantum dot semiconductor optical amplifier, that allows to simulate subpicosecond pulse propagation including power-based and phase-based effects. Static results including amplified spontaneous emission spectra, continuous wave amplification, and four-wave mixing experiments in addition to dynamic pump-probe simulations are presented for different injection currents. The model uses digital filters to describe the frequency dependent gain and microscopically calculated carrier-carrier scattering rates for the interband carrier dynamics. It can be used to calculate the propagation of multiple signals with different wavelengths or one wideband signal with high bitrate.

  6. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  7. Simulation of current filamentation in a dc-driven planar gas discharge-semiconductor system

    NASA Astrophysics Data System (ADS)

    Mokrov, M. S.; Raizer, Yu P.

    2011-10-01

    We have performed a theoretical study of self-organized current filamentation in a dc-driven planar gas discharge-semiconductor system at very low currents and under cryogenic conditions. The discharge instability and the observed formation of current filaments are explained by a thermal mechanism, as proposed in our previous paper. We have found, for the first time, a stationary periodic current structure in a two-dimensional Cartesian geometry from first principles, by numerically solving the general system of continuity equations for ions and electrons, the Poisson equation for the electric field in the gas, together with the equation for gas temperature and the equation for electric field in the semiconductor. The space charge induced electric field redistribution, which usually leads to a discharge instability and is automatically included in the first three equations of the system, is practically absent at the very low currents considered, and thus it cannot be responsible for the discharge instability. This is why another mechanism of filamentation (thermal) should be considered. The calculated periodic current structure agrees with the hexagonal current pattern observed in the experiment, as well as with the periodic current structure found in the frame of the previously developed simple model. This serves as a corroboration of the fact that the thermal effect is essential for pattern formation under the conditions considered.

  8. Optically driven actuators using poly(vinylidene difluoride)

    NASA Astrophysics Data System (ADS)

    Mizutani, Yasuhiro; Otani, Yukitoshi; Umeda, Norihiro

    2008-05-01

    Optically driven actuators have a feature of a non-contact method supplied by light energy. A new method is proposed with three poly(vinylidene difluoride) (PVDF) cantilevers as the legs and a polymer film as the body. The PVDF cantilevers are coated with silver on one surface. When one side of the cantilever is irradiated by a laser beam, an electric field is produced along a cross-section of the cantilever by the pyroelectric effect and a mechanical displacement occurs by the piezoelectric effect. Its response time and its generated force are measured experimentally. Two types of optically driven actuators using PVDF film are proposed to move using different characteristics.

  9. Thermally driven continuous-wave and pulsed optical vortex.

    PubMed

    Ding, Yitian; Xu, Miaomiao; Zhao, Yongguang; Yu, Haohai; Zhang, Huaijin; Wang, Zhengping; Wang, Jiyang

    2014-04-15

    We demonstrated a continuous-wave (cw) and pulsed optical vortex with topological charges driven by heat generated during the lasing process without introducing the astigmatism effect and reducing lasing efficiency. During the lasing process, the topological charges were changeable by the thermal-induced lens and selected by the mode-matching between the pump and oscillating beams. With a graphene sample as the saturable absorber, a pulsed optical vortex was achieved at a wavelength of 1.36 μm, which identified that graphene could be used as a pulse modulator for the generation of a pulsed optical vortex. Thermally driven cw and pulsed optical vortexes should have various promising applications based on the compact structure, changeable topological charges, and specific wavelength. PMID:24978994

  10. Growth, structural, electronic and optical characterization of nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Constantin, Costel

    This project investigates the growth, optical, electronic, surface, magnetic and bulk properties of scandium gallium nitride on Sapphire(0001), manganese scandium nitride on MgO(001), heterostructures of cubic gallium nitride and scandium nitride on Mg(001), and chromium nitride on MgO(001) grown by radio frequency molecular beam epitaxy. The growth of ScxGa1- xN films has been performed at a substrate temperature of 650°C. The diffraction and optical experiments confirm the existence of two main regimes of growth; for high Sc concentration (x ≥ 0.54), a rocksalt crystal structure is obtained. For low x ( x ≤ 0.17), a wurtzite-like crystal structure is observed with local lattice distortions at the sites where the Sc atoms incorporate substitutionally into the Ga sites. The growth of MnxSc1- xN films, with x = 0.03-0.05, has been performed at a substrate temperature of ˜500°C. A rocksalt structure is observed for the MnxSc1-xN films. Magnetic measurements preformed on the Mn0.03Sc0.97 N film show ferromagnetic with a TC ˜ 50 K. As the manganese concentration is increased to x = 0.05, the ferromagnetism is reduced. The growth of heterostructures c-GaN(001)/ScN(001)/MgO(001) and ScN(001)/c-GaN(001)/MgO(001) adopt a cubical symmetry of the MgO(001) substrate. The zincblend c-GaN grown atop of ScN(001) shows a smoother surface (predominantly 2D growth) as compared to the rocksalt ScN(001) grown on atop of c-GaN(001). The growth of stoichiometric CrN(001) films is performed at a substrate temperature of 450°C. A novel growth method of highly crystalline stoichiometric CrN(001) films has been proposed. The room temperature scanning tunneling microscopy together with resistivity versus temperature experiments reveal the electronic behavior of CrN(001) films to be metallic below T N ≃ 270 K, and semiconductor above TN.

  11. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  12. All-optical pulse data generation in a semiconductor optical amplifier gain controlled by a reshaped optical clock injection

    NASA Astrophysics Data System (ADS)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-05-01

    Wavelength-maintained all-optical pulse data pattern transformation based on a modified cross-gain-modulation architecture in a strongly gain-depleted semiconductor optical amplifier (SOA) is investigated. Under a backward dark-optical-comb injection with 70% duty-cycle reshaping from the received data clock at 10GHz, the incoming optical data stream is transformed into a pulse data stream with duty cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. The high-pass filtering effect of the gain-saturated SOA greatly improves the extinction ratio of data stream by 8dB and reduces its bit error rate to 10-12 at -18dBm.

  13. Thermo-optically driven adaptive mirror

    NASA Astrophysics Data System (ADS)

    Reinert, Felix; Lüthy, Willy

    2006-02-01

    The ideal adaptive optical mirror combines large aperture with high spatial and temporal resolution and a phase shift of at least 2π. Further, a simple low-cost solution is preferred. No adaptive system can perfectly fulfill all these requirements. We present a system that has the potential to reach this goal with the exception of high temporal resolution. But even with a moderate temporal resolution of one second such a system can find practical applications. For example as a laser resonator mirror that allows to modify the intensity distribution of the emission, or to correct slowly varying aberrations of optical systems. Two possible mechanisms can be used to change the optical path length of the adaptive mirror: thermal expansion of the mirror substrate or the thermally induced change of the refractive index (thermal dispersion) of a medium in front of the mirror. Both mechanisms have been shown to lead to promising results. In both cases heating was performed by irradiation of light in the active medium. The thermal dispersion based adaptive mirror is built with a thin layer of a liquid in front of a mirror. To allow a modification of the refractive index by irradiation with a diode laser at 808 nm, a suitable absorber is dissolved in the water. With chopped irradiation a resolution of 3.8 Hz at 30 % contrast is measured. This mirror has been used in a laser resonator to modify the output distribution of the laser. The thermal expansion based adaptive mirror is built with a thin layer of a silicon elastomer with a gold coated front side. We present a preparation method to produce thin films of Sylgard on sapphire. With an irradiated intensity of only 370 mW/cm2 surface modulations of up to 350 nm are obtained. With a test pattern a resolution of 1.6 line-pairs per millimeter at 30 % contrast is measured. The temporal resolution is better than one second.

  14. Formation and all-optical control of optical patterns in semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Binder, R.; Tsang, C. Y.; Tse, Y. C.; Luk, M. H.; Kwong, N. H.; Chan, Chris K. P.; Leung, P. T.; Lewandowski, P.; Schumacher, Stefan; Lafont, O.; Baudin, E.; Tignon, J.

    2016-05-01

    Semiconductor microcavities offer a unique way to combine transient all-optical manipulation of GaAs quantum wells with the benefits of structural advantages of microcavities. In these systems, exciton-polaritons have dispersion relations with very small effective masses. This has enabled prominent effects, for example polaritonic Bose condensation, but it can also be exploited for the design of all-optical communication devices. The latter involves non-equilibrium phase transitions in the spatial arrangement of exciton-polaritons. We consider the case of optical pumping with normal incidence, yielding a spatially homogeneous distribution of exciton-polaritons in optical cavities containing the quantum wells. Exciton-exciton interactions can trigger instabilities if certain threshold behavior requirements are met. Such instabilities can lead, for example, to the spontaneous formation of hexagonal polariton lattices (corresponding to six-spot patterns in the far field), or to rolls (corresponding to two-spot far field patterns). The competition among these patterns can be controlled to a certain degree by applying control beams. In this paper, we summarize the theory of pattern formation and election in microcavities and illustrate the switching between patterns via simulation results.

  15. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    SciTech Connect

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-08-23

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  16. Frequency-stabilized limit-cycle dynamics of an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    AlMulla, Mohammad; Liu, Jia-Ming

    2014-07-01

    Limit-cycle dynamics are self-sustained oscillations that arise in man-made nonlinear systems and in nature. In an optically injected semiconductor laser, limit-cycle oscillations can reach a frequency ten times the relaxation resonance frequency of the solitary semiconductor laser. To stabilize such oscillations, complicated circuitry is often used. Here, we demonstrate limit-cycle oscillations of inherently stable frequencies. By properly choosing the operating conditions, three distinct types of stable-frequency oscillation points are defined.

  17. Optically enhanced oxidation of III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Fukuda, Mitsuo; Takahei, Kenichiro

    1985-01-01

    Oxidation of III-V compound semiconductor (110) cleaved surfaces under light irradiation is studied. The light irradiation enhanced the reaction rate of oxidation but the relationship between oxide growth and oxidation time under logarithmic law scarcely changed within this experimental range. The oxidation trend observed under light irradiation is similar to that of thermal oxidation for GaP, GaAs, InP, InAs, InGaAs, and InGaAsP. Semiconductors having As as the V element tend to be easily oxidized, while those of the above mentioned six kinds of materials having Ga as the III element are quickly oxidized in their initial stage. Ternary and quaternary compound semiconductors have less tendency to be oxidized compared to their constituent binary materials. off

  18. An analytical study on bistability of Fabry-Perot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wang, Gang; Chen, Shuqiang; Yang, Huajun

    2016-09-01

    Optical bistabilities have been considered to be useful for sensor applications. As a typical nonlinear device, Fabry-Perot semiconductor optical amplifiers (FPSOAs) exhibit bistability under certain conditions. In this paper, the bistable characteristics in FPSOAs are investigated theoretically. Based on Adams's relationship between the incident optical intensity I in and the z-independent average intracavity intensity I av, an analytical expression of the bistable loop width in SOAs is derived. Numerical simulations confirm the accuracy of the analytical result.

  19. Tangled nonlinear driven chain reactions of all optical singularities

    NASA Astrophysics Data System (ADS)

    Vasil'ev, V. I.; Soskin, M. S.

    2012-03-01

    Dynamics of polarization optical singularities chain reactions in generic elliptically polarized speckle fields created in photorefractive crystal LiNbO3 was investigated in details Induced speckle field develops in the tens of minutes scale due to photorefractive 'optical damage effect' induced by incident beam of He-Ne laser. It was shown that polarization singularities develop through topological chain reactions of developing speckle fields driven by photorefractive nonlinearities induced by incident laser beam. All optical singularities (C points, optical vortices, optical diabolos,) are defined by instantaneous topological structure of the output wavefront and are tangled by singular optics lows. Therefore, they have develop in tangled way by six topological chain reactions driven by nonlinear processes in used nonlinear medium (photorefractive LiNbO3:Fe in our case): C-points and optical diabolos for right (left) polarized components domains with orthogonally left (right) polarized optical vortices underlying them. All elements of chain reactions consist from loop and chain links when nucleated singularities annihilated directly or with alien singularities in 1:9 ratio. The topological reason of statistics was established by low probability of far enough separation of born singularities pair from existing neighbor singularities during loop trajectories. Topology of developing speckle field was measured and analyzed by dynamic stokes polarimetry with few seconds' resolution. The hierarchy of singularities govern scenario of tangled chain reactions was defined. The useful space-time data about peculiarities of optical damage evolution were obtained from existence and parameters of 'islands of stability' in developing speckle fields.

  20. Distributed fibre optic strain measurements on a driven pile

    NASA Astrophysics Data System (ADS)

    Woschitz, Helmut; Monsberger, Christoph; Hayden, Martin

    2016-05-01

    In civil engineering pile systems are used in unstable areas as a foundation of buildings or other structures. Among other parameters, the load capacity of the piles depends on their length. A better understanding of the mechanism of load-transfer to the soil would allow selective optimisation of the system. Thereby, the strain variations along the loaded pile are of major interest. In this paper, we report about a field trial using an optical backscatter reflectometer for distributed fibre-optic strain measurements along a driven pile. The most significant results gathered in a field trial with artificial pile loadings are presented. Calibration results show the performance of the fibre-optic system with variations in the strain-optic coefficient.

  1. Formation of Nanoscale Composites of Compound Semiconductors Driven by Charge Transfer.

    PubMed

    Gao, Weiwei; Dos Reis, Roberto; Schelhas, Laura T; Pool, Vanessa L; Toney, Michael F; Yu, Kin Man; Walukiewicz, Wladek

    2016-08-10

    Composites are a class of materials that are formed by mixing two or more components. These materials often have new functional properties compared to their constituent materials. Traditionally composites are formed by self-assembly due to structural dissimilarities or by engineering different layers or structures in the material. Here we report the synthesis of a uniform and stoichiometric composite of CdO and SnTe with a novel nanocomposite structure stabilized by the dissimilarity of the electronic band structure of the constituent materials. The composite has interesting electronic properties which range from highly n-type in CdO to semi-insulating in the intermediate composition range to highly p-type in SnTe. This can be explained by the overlap of the conduction and valence band of the constituent compounds. Ultimately, our work identifies a new class of composite semiconductors in which nanoscale self-organization is driven and stabilized by charge transfer between constituent materials. PMID:27459505

  2. Nanoscale-driven crystal growth of hexaferrite heterostructures for magnetoelectric tuning of microwave semiconductor integrated devices.

    PubMed

    Hu, Bolin; Chen, Zhaohui; Su, Zhijuan; Wang, Xian; Daigle, Andrew; Andalib, Parisa; Wolf, Jason; McHenry, Michael E; Chen, Yajie; Harris, Vincent G

    2014-11-25

    A nanoscale-driven crystal growth of magnetic hexaferrites was successfully demonstrated at low growth temperatures (25-40% lower than the temperatures required often for crystal growth). This outcome exhibits thermodynamic processes of crystal growth, allowing ease in fabrication of advanced multifunctional materials. Most importantly, the crystal growth technique is considered theoretically and experimentally to be universal and suitable for the growth of a wide range of diverse crystals. In the present experiment, the conical spin structure of Co2Y ferrite crystals was found to give rise to an intrinsic magnetoelectric effect. Our experiment reveals a remarkable increase in the conical phase transition temperature by ∼150 K for Co2Y ferrite, compared to 5-10 K of Zn2Y ferrites recently reported. The high quality Co2Y ferrite crystals, having low microwave loss and magnetoelectricity, were successfully grown on a wide bandgap semiconductor GaN. The demonstration of the nanostructure materials-based "system on a wafer" architecture is a critical milestone to next generation microwave integrated systems. It is also practical that future microwave integrated systems and their magnetic performances could be tuned by an electric field because of the magnetoelectricity of hexaferrites.

  3. Formation of Nanoscale Composites of Compound Semiconductors Driven by Charge Transfer.

    PubMed

    Gao, Weiwei; Dos Reis, Roberto; Schelhas, Laura T; Pool, Vanessa L; Toney, Michael F; Yu, Kin Man; Walukiewicz, Wladek

    2016-08-10

    Composites are a class of materials that are formed by mixing two or more components. These materials often have new functional properties compared to their constituent materials. Traditionally composites are formed by self-assembly due to structural dissimilarities or by engineering different layers or structures in the material. Here we report the synthesis of a uniform and stoichiometric composite of CdO and SnTe with a novel nanocomposite structure stabilized by the dissimilarity of the electronic band structure of the constituent materials. The composite has interesting electronic properties which range from highly n-type in CdO to semi-insulating in the intermediate composition range to highly p-type in SnTe. This can be explained by the overlap of the conduction and valence band of the constituent compounds. Ultimately, our work identifies a new class of composite semiconductors in which nanoscale self-organization is driven and stabilized by charge transfer between constituent materials.

  4. NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

    NASA Astrophysics Data System (ADS)

    Khadzhi, P. I.; Lyakhomskaya, K. D.

    1999-10-01

    The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

  5. Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

    NASA Astrophysics Data System (ADS)

    Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

    2016-05-01

    It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

  6. Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors

    SciTech Connect

    Malevich, Y. V. Adomavičius, R.; Krotkus, A.; Malevich, V. L.

    2014-02-21

    Transient photoconductivity in cubic semiconductors InGaAs and InAs excited by a femtosecond laser pulse in the presence of a uniform dc electric field has been studied with the use of the Monte Carlo simulation by taking into account optical alignment of photoexcited electrons over their momenta. Simulations show that due to the optical alignment effect and energy dependence of the electron mobility, the transient photoconductivity in cubic semiconductors becomes anisotropic during the first few picoseconds after optical excitation. The magnitude of this anisotropy reaches its peak when the excess energy of the optically excited electrons approaches the threshold for the intervalley transfer. It has also been found that when the electrons are excited near the threshold energy for the intervalley transfer, the component of the transient photocurrent directed along the dc field for a short time after the end of the femtosecond optical pulse can become negative. The anisotropy of the transient photoconductivity has been investigated experimentally on (001) InGaAs sample by the optical pump - terahertz-probe technique. Optically induced changes in terahertz pulse amplitude were found to be dependent on the direction of terahertz field relative to the polarization of the optical pump pulse and to the crystallographic axes of the semiconductor. Experimental data have been explained in terms of the transient anisotropic photoconductivity and correlate with the results of the Monte Carlo simulation.

  7. Mixed-polarization optical rectification in semiconductor waveguides

    NASA Astrophysics Data System (ADS)

    Bubke, Karsten; Hutchings, David C.; Peschel, Ulf

    2002-04-01

    The nonlinear interaction of TE and TM optical modes with a microwave by means of optical rectification and the electro-optic effect in a traveling-wave structure is investigated. The phase velocity mismatch between the optical waves leads to effects that are essentially different from those in the single-polarization case. Whereas, for a velocity-matched structure, alternating upconversion and downconversion occur, a slight difference between optical group velocity and microwave phase velocity gives rise to a sinusoidal terahertz signal with a number of cycles that depends on beat length, length of the structure, and velocity mismatch. A structure for on-chip generation of tunable narrow-bandwidth terahertz signals is suggested. Cascading caused by optical rectification and the electro-optic effect can lead to an effective change of beat length and self-induced mode conversion at high optical powers.

  8. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  9. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  10. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    PubMed

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

  11. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    PubMed

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication. PMID:21369207

  12. Screening effect on the exciton mediated nonlinear optical susceptibility of semiconductor quantum dots.

    PubMed

    Bautista, Jessica E Q; Lyra, Marcelo L; Lima, R P A

    2014-11-17

    We study the exciton contribution to the third-order optical susceptibility of one-dimensional semiconductor quantum dots and show that the screening of the electron-hole interaction has a strong influence on the nonlinear optical properties in the weak confinement regime. Based on a density matrix formulation, we estimate the spectrum of the third-order optical susceptibility and its contribution to the refraction index and absorption coefficient. In particular, we show that the multipeaked spectrum of the nonlinear susceptibility, which results from the hydrogenoid character of the exciton eigenstates for a purely Coulombian electron-hole coupling, is reverted towards a single peaked structure as the interaction becomes strongly screened, thus leading to a substantial enhancement of the nonlinear optical properties of semiconductor quantum dots.

  13. Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells

    NASA Astrophysics Data System (ADS)

    H, R. Hamedi; M, R. Mehmannavaz; Hadi, Afshari

    2015-08-01

    The effects of optical field on the phenomenon of optical bistability (OB) are investigated in a K-type semiconductor double quantum well (SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing. Project supported by the Lithuanian Research Council (Grant No. VP1-3.1-ŠM-01-V-03-001).

  14. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  15. Critical slowing down and critical exponents in LD/PIN optically-bistable semiconductor lasers

    SciTech Connect

    Zhong Lichen; Guo Yili

    1988-04-01

    Critical slowing down for LD/PIN bistable optical semiconductor lasers and the critical exponents ..gamma.. for this system have been experimentally investigated. The experimental value ..gamma..approx.0.53 is basically in agreement with the theoretically predicted value of 0.5.

  16. Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Charles, John; Hyland, Patrick; Scholz, Christian; Xu, Zuntu; Lin, Yong; Weiss, Eli; Chilla, Juan; Lepert, Arnaud

    2016-03-01

    Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.

  17. Optical nonlinearities in semiconductor-doped glasses near and below the band edge

    NASA Astrophysics Data System (ADS)

    Bindra, K. S.; Oak, S. M.; Rustagi, K. C.

    1998-03-01

    We present a brief review of our recent experimental results on optical nonlinearities in semiconductor-doped glasses. It is shown that even below the absorption edge the nonlinearities are determined by nonlinear absorption. The optical Kerr effect is found to have a susceptibility which is comparable to that for nonlinear refraction. We also find that in degenerate four-wave mixing the observed intensity dependence can be strongly influenced by nonlinear absorption.

  18. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  19. Optically pumped DBR-free semiconductor disk lasers.

    PubMed

    Yang, Zhou; Albrecht, Alexander R; Cederberg, Jeffrey G; Sheik-Bahae, Mansoor

    2015-12-28

    We report high power distributed Bragg reflector (DBR)-free semiconductor disk lasers. With active regions lifted off and bonded to various transparent heatspreaders, the high thermal impedance and narrow bandwidth of DBRs are mitigated. For a strained InGaAs multi-quantum-well sample bonded to a single-crystalline chemical-vapor deposited diamond, a maximum CW output power of 2.5 W and a record 78 nm tuning range centered at λ≈1160 nm was achieved. Laser operation using a total internal reflection geometry is also demonstrated. Furthermore, analysis for power scaling, based on thermal management, is presented. PMID:26831984

  20. The dynamics of radiation-driven, optically thick winds

    NASA Astrophysics Data System (ADS)

    Shen, Rong-Feng; Nakar, Ehud; Piran, Tsvi

    2016-06-01

    Recent observation of some luminous transient sources with low colour temperatures suggests that the emission is dominated by optically thick winds driven by super-Eddington accretion. We present a general analytical theory of the dynamics of radiation pressure-driven, optically thick winds. Unlike the classical adiabatic stellar wind solution whose dynamics are solely determined by the sonic radius, here the loss of the radiation pressure due to photon diffusion also plays an important role. We identify two high mass-loss rate regimes (dot{M} > L_Edd/c^2). In the large total luminosity regime, the solution resembles an adiabatic wind solution. Both the radiative luminosity, L, and the kinetic luminosity, Lk, are super-Eddington with L < Lk and L ∝ L_k^{1/3}. In the lower total luminosity regime, most of the energy is carried out by the radiation with Lk < L ≈ LEdd. In a third, low mass-loss regime (dot{M} < L_Edd/c^2), the wind becomes optically thin early on and, unless gas pressure is important at this stage, the solution is very different from the adiabatic one. The results are independent from the energy generation mechanism at the foot of the wind; therefore, they are applicable to a wide range of mass ejection systems, from black hole accretion, to planetary nebulae, and to classical novae.

  1. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, M. C.; Muggli, Patric; Yakimenko, Vitaly; Babzien, Marcus; Kusche, Karl; Fedurin, Mikhail

    2010-11-01

    Beam-driven plasma wakefield accelerators (PWFA), such as the ``plasma afterburner,'' are a promising approach for significantly increasing the particle energies of conventional accelerators. The study and optimization of PWFA would benefit from an experimental correlation between the parameters of the drive bunch, the accelerated bunch and the corresponding, accelerating plasma wave structure. However, the plasma wave structure has not yet been observed directly in PWFA. We will report our current work on noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) visualization of beam-driven plasma waves. Both techniques employ two laser pulses (probe and reference) co-propagating with the particle drive-beam and its plasma wake. The reference pulse precedes the drive bunch, while the probe overlaps the plasma wave and maps its longitudinal and transverse structure. The experiment is being developed at the BNL/ATF Linac to visualize wakes generated by two and multi-bunch drive beams.

  2. SEMICONDUCTOR DEVICES Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy

    NASA Astrophysics Data System (ADS)

    Lan, Rao; Guofeng, Song; Lianghui, Chen

    2010-10-01

    In order to analyze the thermal characteristics of the cavity facet of a semiconductor laser, a home-built near-field scanning optical microscopy (NSOM) is employed to probe the topography of the facet. By comparing the topographic images of two samples under different DC current injections, we can find that the thermal characteristic is related to its lifetime. We show that it is possible to predict the lifetime of the semiconductor laser diode with non-destructive tests.

  3. Experimental examinations of semiconductor laser amplifiers for optical communication technology

    NASA Astrophysics Data System (ADS)

    Ludwig, Reinhold

    1993-01-01

    Properties of SLA (Semiconductor Laser Amplifier), which are particularly interesting for application to linear repeaters in coherent multichannel systems, are studied and design rules for future optimized amplifier structure are deduced. Laser diode antireflection was examined and reflection factor was measured. Low signal properties were discussed considering injection current, wavelengths, temperature and polarization. The coupling between amplifiers and glass fibers was examined. The utilization of cascade amplifiers as linear repeaters in multichannel heterodyne systems and television distribution systems was investigatied. The following results are obtained: measurement and calculation of the paradiaphony between two signals radiated in a SLA; multichannel data transfer through a SLA; polarization independent amplification with SLA configurations; measurement of the frequency dependence of four wave mixing sidelines in a SLA; measurement of the system degradation through echoes in a bidirectional SLA chain; data transmission with frequency conversion and calculation of multichannel transmission systems with cascade SLA, taking into account saturation, signal to noise ratio, bandwidth reduction and echo.

  4. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    PubMed Central

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  5. Low-temperature optical processing of semiconductor devices using photon effects

    SciTech Connect

    Sopori, B.L.; Cudzinovic, M.; Symko, M.

    1995-08-01

    In an RTA process the primary purpose of the optical energy incident on the semiconductor sample is to increase its temperature rapidly. The activation of reactions involved in processes such as the formation of junctions, metal contacts, deposition of oxides or nitrides, takes place purely by the temperature effects. We describe the observation of a number of new photonic effects that take place within the bulk and at the interfaces of a semiconductor when a semiconductor device is illuminated with a spectrally broad-band light. Such effects include changes in the diffusion properties of impurities in the semiconductor, increased diffusivity of impurities across interfaces, and generation of electric fields that can alter physical and chemical properties of the interface. These phenomena lead to certain unique effects in an RTA process that do not occur during conventional furnace annealing under the same temperature conditions. Of particular interest are observations of low-temperature alloying of Si-Al interfaces, enhanced activation of phosphorus in Si during drive-in, low-temperature oxidation of Si, and gettering of impurities at low-temperatures under optical illumination. These optically induced effects, in general, diminish with an increase in the temperature, thus allowing thermally activated reaction rates to dominate at higher temperatures.

  6. Linearly chirped microwave waveform generation with large time-bandwidth product by optically injected semiconductor laser.

    PubMed

    Zhou, Pei; Zhang, Fangzheng; Guo, Qingshui; Pan, Shilong

    2016-08-01

    A scheme for photonic generation of linearly chirped microwave waveforms (LCMWs) with a large time-bandwidth product (TBWP) is proposed and demonstrated based on an optically injected semiconductor laser. In the proposed system, the optically injected semiconductor laser is operated in period-one (P1) oscillation state. After optical-to-electrical conversion, a microwave signal can be generated with its frequency determined by the injection strength. By properly controlling the injection strength, an LCMW with a large TBWP can be generated. The proposed system has a simple and compact structure. Besides, the center frequency, bandwidth, as well as the temporal duration of the generated LCMWs can be easily adjusted. An experiment is carried out. LCMWs with TBWPs as large as 1.2x105 (bandwidth 12 GHz; temporal duration 10 μs) are successfully generated. The flexibility for tuning the center frequency, bandwidth and temporal duration is also demonstrated. PMID:27505809

  7. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    SciTech Connect

    Kasherininov, P. G. Tomasov, A. A.

    2008-11-15

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10{sup 6} cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10{sup -2}V/cm{sup 2}, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  8. Floquet engineering with quasienergy bands of periodically driven optical lattices

    NASA Astrophysics Data System (ADS)

    Holthaus, Martin

    2016-01-01

    A primer on the Floquet theory of periodically time-dependent quantum systems is provided, and it is shown how to apply this framework for computing the quasienergy band structure governing the dynamics of ultracold atoms in driven optical cosine lattices. Such systems are viewed here as spatially and temporally periodic structures living in an extended Hilbert space, giving rise to spatio-temporal Bloch waves whose dispersion relations can be manipulated at will by exploiting ac-Stark shifts and multiphoton resonances. The elements required for numerical calculations are introduced in a tutorial manner, and some example calculations are discussed in detail, thereby illustrating future prospects of Floquet engineering.

  9. Structure and optical properties of CdSe chalcogenide semiconductors

    NASA Astrophysics Data System (ADS)

    Ganaie, Mohsin; Prince, Zulfequar, M.

    2015-08-01

    CdSe bulk sample has been prepared by melt-quenching technique and were characterized with XRD, SEM, FTIR, and electrical measurements. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of 10-6 Torr. An XRD measurement reveals the coexistence of glassy and crystalline phase in bulk sample. SEM studies shows single phase, porous, and granular surface morphology of powder CdSe alloy. Optical properties (optical gap, absorption coefficient, extinction coefficient, refractive index) are calculated in the range of 190-1100nm. Analysis of the optical measurement shows that the non-direct transition is predominant and the band gap come outs to be 1.751eV. Dc conductivity measurement is thermally activated process which shows the semiconducting nature of the sample having activation energy 0.31eV.

  10. Optical properties of two-dimensional zigzag and armchair graphyne nanoribbon semiconductor.

    PubMed

    Asadpour, Mohamad; Jafari, Mahmoud; Asadpour, Milad; Jafari, Maryam

    2015-03-15

    Optical properties of zigzag and armchair graphyne nanoribbon (GNR) sheet were investigated. Effect of increasing the width of nanoribbon on optical properties and optical band gap in particular was also studied. Calculations were based on density functional theory (DFT) and the results showed that these structures were semiconductors with the optical band gap of about 1-3.5 eV; this value was higher than for the armchair than zigzag structures. With increasing the width of the ribbons, optical band gap decreased in both structures and maximum electron energy loss spectroscopy (EELS) and dielectric constant increased for the zigzag and armchair structures. Moreover, for the armchair structure, maximum optical reflectivity versus GNR width was a linear function, while it showed a teeth behavior for the zigzag structure.

  11. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    NASA Astrophysics Data System (ADS)

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  12. Fibre-optic thermometer using semiconductor-etalon sensor

    NASA Technical Reports Server (NTRS)

    Beheim, G.

    1986-01-01

    A fiber-optic thermometer is described which uses a thick-film SiC sensing etalon. The etalon's temperature-dependent phase shift is determined by analyzing its spectral reflectance, using an LED and a tunable Michelson interferometer. Temperatures from 20 to 1000 C are measured with better than 0.5 deg C resolution.

  13. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-01

    Bunch driven plasma wakefield accelerators (PWFA), such as the "plasma afterburner," are a promising emerging method for significantly increasing the energy output of conventional particle accelerators [1]. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) [2] and Holographic (FDH) [3] diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two [4] and multi-bunch [5] drive beams.

  14. Beam driven upper-hybrid-wave instability in quantized semiconductor plasmas

    SciTech Connect

    Jamil, M.; Rasheed, A.; Rozina, Ch.; Moslem, W. M.; Salimullah, M.

    2014-02-15

    The excitation of Upper-Hybrid waves (UHWs) induced by electron beam in semiconductor plasma is examined using quantum hydrodynamic model. Various quantum effects are taken into account including recoil effect, Fermi degenerate pressure, and exchange-correlation potential. The bandwidth of the UHWs spectrum shows that the system supports purely growing unstable mode. The latter has been studied for diversified parameters of nano-sized GaAs semiconductor.

  15. Fast photonic information processing using semiconductor lasers with delayed optical feedback: role of phase dynamics.

    PubMed

    Nguimdo, Romain Modeste; Verschaffelt, Guy; Danckaert, Jan; Van der Sande, Guy

    2014-04-01

    Semiconductor lasers subject to delayed optical feedback have recently shown great potential in solving computationally hard tasks. By optically implementing a neuro-inspired computational scheme, called reservoir computing, based on the transient response to optical data injection, high processing speeds have been demonstrated. While previous efforts have focused on signal bandwidths limited by the semiconductor laser's relaxation oscillation frequency, we demonstrate numerically that the much faster phase response makes significantly higher processing speeds attainable. Moreover, this also leads to shorter external cavity lengths facilitating future on-chip implementations. We numerically benchmark our system on a chaotic time-series prediction task considering two different feedback configurations. The results show that a prediction error below 4% can be obtained when the data is processed at 0.25 GSamples/s. In addition, our insight into the phase dynamics of optical injection in a semiconductor laser also provides a clear understanding of the system performance at different pump current levels, even below solitary laser threshold. Considering spontaneous emission noise and noise in the readout layer, we obtain good prediction performance at fast processing speeds for realistic values of the noise strength.

  16. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    NASA Astrophysics Data System (ADS)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  17. Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-11-01

    We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

  18. Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

    NASA Astrophysics Data System (ADS)

    Yang, Shuyu; Zhang, Yi; Li, Qi; Zhu, Xiaoliang; Bergman, Keren; Magill, Peter; Baehr-Jones, Thomas; Hochberg, Michael

    2015-02-01

    We report a hybrid integrated external cavity laser by butt coupling a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip. The device lasers at 1302 nm in the O-band, a wavelength regime critical to data communication systems. We measured 18 mW on-chip output power and over 50-dB side-mode suppression ratio. We also demonstrated open eye diagrams at 10 and 40 Gb/s.

  19. Drastic emission-spectra changes in a semiconductor laser owing to optical feedback from an optical connector

    SciTech Connect

    Matsuura, M.; Tanifuji, T.; Yamamoto, Y.

    1986-07-01

    The time-averaged longitudinal-mode power of a semiconductor laser coupled to fiber changes drastically when an external force is applied to a multimode fiber terminated with an optical connector. No emission-spectra changes have been observed in the case of a single-mode fiber. This phenomenon is considered to be induced by the wavelength-dependent change of the reflected field speckle intensity coupled into the laser-active region.

  20. Mueller based scatterometry and optical characterization of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Muthinti, Gangadhara Raja

    Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete information about the optical reflection and transmission of polarized light reflected from a sample. MM is a 4x4 transformation matrix (16 elements) describing the change in the intensities of incident polarized light expressed by means of a Stokes Vector. The symmetry properties associated with MM provide an excellent means of measuring and understanding the topography of the periodic nanostructures. Topography here refers to uniformity of the periodic order of arrayed structure. The advantage of MMS over traditional SE Scatterometry is the ability of MMS to measure samples that have anisotropic optical properties and depolarize light. The present work focuses on understanding the Mueller based Scatterometry with respect to other methodologies by a systematic approach. Several laterally complex nano-scale structures with dimensions in the order of nanometers were designed and fabricated using e-beam lithography. Also Mueller based analysis was used to extract profile information and anisotropy coefficients of complex 3D FinFET, SOI fin grating structures. Later, Spectroscopic Mueller matrix (all 16 elements) and SE data were collected in planar diffraction mode for the samples using a J.A. Woollam RC2(TM) Spectroscopic Ellipsometer. Nano

  1. Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.

    PubMed

    Rautiainen, Jussi; Krestnikov, Igor; Butkus, Mantas; Rafailov, Edik U; Okhotnikov, Oleg G

    2010-03-01

    We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry.

  2. Methods and devices for optimizing the operation of a semiconductor optical modulator

    DOEpatents

    Zortman, William A.

    2015-07-14

    A semiconductor-based optical modulator includes a control loop to control and optimize the modulator's operation for relatively high data rates (above 1 GHz) and/or relatively high voltage levels. Both the amplitude of the modulator's driving voltage and the bias of the driving voltage may be adjusted using the control loop. Such adjustments help to optimize the operation of the modulator by reducing the number of errors present in a modulated data stream.

  3. All optical millimeter-wave electrical signal generation using an integrated mode-locked semiconductor ring laser and photodiode

    SciTech Connect

    Vawter, G.A.; Mar, A.; Hietala, V.; Zolper, J.; Hohimer, J.

    1997-12-01

    The first monolithic photonic integrated circuit for all-optical generation of millimeter (mm)-wave electrical signals is reported. The design integrates a mode-locked semiconductor ring diode laser, an optical amplifier, and a high-speed photodetector into a single optical integrated circuit. Signal generation is demonstrated at frequencies of 30, 60, and 90 GHz.

  4. Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

    NASA Technical Reports Server (NTRS)

    Suematsu, Y.; Iga, K.

    1980-01-01

    Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

  5. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    NASA Astrophysics Data System (ADS)

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-08-01

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception-and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In2O3 (ITO)-converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein-Moss shift that are consistent with previous studies on In2O3 single crystals and thin films.

  6. Two semiconductor ring lasers coupled by a single-waveguide for optical memory operation

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Coomans, Werner; Gelens, Lendert

    2014-05-01

    Semiconductor ring lasers are semiconductor lasers where the laser cavity consists of a ring-shaped waveguide. SRLs are highly integrable and scalable, making them ideal candidates for key components in photonic integrated circuits. SRLs can generate light in two counterpropagating directions between which bistability has been demonstrated. Hence, information can be coded into the emission direction. This bistable operation allows SRLs to be used in systems for all-optical switching and as all-optical memories. For the demonstration of fast optical flip-flop operation, Hill et al. [Nature 432, 206 (2004)] fabricated two SRLs coupled by a single waveguide, rather than a solitary SRL. Nevertheless, the literature shows that a single SRL can also function perfectly as an all-optical memory. In our recent paper [W. Coomans et al., Phys. Rev. A 88, 033813, (2013)], we have raised the question whether coupling two SRLs to realize a single optical memory has any advantage over using a solitary SRL, taking into account the obvious disadvantage of a doubled footprint and power consumption. To provide the answer, we have presented in that paper a numerical study of the dynamical behavior of semiconductor ring lasers coupled by a single bus waveguide, both when weakly coupled and when strongly coupled. We have provided a detailed analysis of the multistable landscape in the coupled system, analyzed the stability of all solutions and related the internal dynamics in the individual lasers to the field effectively measured at the output of the waveguide. We have shown which coupling phases generally promote instabilities and therefore need to be avoided in the design. Regarding all-optical memory operation, we have demonstrated that there is no real advantage for bistable memory operation compared to using a solitary SRL. An increased power suppression ratio has been found to be mainly due to the destructive interference of the SRL fields at the low power port. Also

  7. Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-10-01

    We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

  8. Influence of external optical feedback on the alpha factor of semiconductor lasers.

    PubMed

    Yu, Yanguang; Xi, Jiangtao

    2013-06-01

    This Letter presents the results revealing the influence of external optical feedback (EOF) on the alpha factor, or the linewidth enhancement factor, of semiconductor lasers operating on single mode. First, a method is proposed for the measurement of the alpha over a wide range of optical feedback level, which provides an effective way for investigating the dependence of the alpha on laser operating conditions. Second, experimental investigation based on the proposed method is performed on a GaAlAs laser diode with a multiquantum well structure. It is discovered that the alpha value remains approximately constant with increasing injection current, but has a strong dependence on EOF.

  9. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, Raymond J.; Benett, William J.; Mills, Steven T.

    1997-01-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

  10. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, R.J.; Benett, W.J.; Mills, S.T.

    1997-04-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

  11. Enhanced 10 Gb/s operations of directly modulated reflective semiconductor optical amplifiers without electronic equalization.

    PubMed

    Presi, M; Chiuchiarelli, A; Corsini, R; Choudury, P; Bottoni, F; Giorgi, L; Ciaramella, E

    2012-12-10

    We report enhanced 10 Gb/s operation of directly modulated bandwidth-limited reflective semiconductor optical amplifiers. By using a single suitable arrayed waveguide grating we achieve simultaneously WDM demultiplexing and optical equalization. Compared to previous approaches, the proposed system results significantly more tolerant to seeding wavelength drifts. This removes the need for wavelength lockers, additional electronic equalization or complex digital signal processing. Uniform C-band operations are obtained experimentally with < 2 dB power penalty within a wavelength drift of 10 GHz (which doubles the ITU-T standard recommendations).

  12. RZ-DQPSK Signal Amplitude Regeneration Using a Semiconductor Optical Amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Wen-Han; Huang, Xi; Yu, Yu; Zhang, Xin-Liang

    2012-04-01

    An all-optical return-to-zero differential quadrature phase-shift keying (RZ-DQPSK) signal regeneration scheme is experimentally demonstrated. Thanks to the gain saturation effect, common quantum-well semiconductor optical amplifiers have the ability to regenerate the amplitude distorted RZ-DQPSK signal, so amplitude noise can be reduced while phase information will not be distorted. A significant eye-opening improvement and a negative power penalty of about 1 dB can be achieved for an 80 Gb/s RZ-DQPSK signal.

  13. Odd-number theorem: optical feedback control at a subcritical Hopf bifurcation in a semiconductor laser.

    PubMed

    Schikora, S; Wünsche, H-J; Henneberger, F

    2011-02-01

    A subcritical Hopf bifurcation is prepared in a multisection semiconductor laser. In the free-running state, hysteresis is absent due to noise-induced escape processes. The missing branches are recovered by stabilizing them against noise through application of phase-sensitive noninvasive delayed optical feedback control. The same type of control is successfully used to stabilize the unstable pulsations born in the Hopf bifurcation. This experimental finding represents an optical counterexample to the so-called odd-number limitation of delayed feedback control. However, as a leftover of the limitation, the domains of control are extremely small.

  14. Comparison of the fiber optic dosimeter and semiconductor dosimeter for use in diagnostic radiology

    NASA Astrophysics Data System (ADS)

    Yoo, W. J.; Shin, S. H.; Sim, H. I.; Hong, S.; Kim, S. G.; Jang, J. S.; Kim, J. S.; Jeon, H. S.; Kwon, G. W.; Jang, K. W.; Cho, S.; Lee, B.

    2014-05-01

    A fiber-optic dosimeter (FOD) was fabricated using a plstic scintillating fiber, a plastic optical fiber, and a multi-pixel photon counter to measure entrance surface dose (ESD) in diagnostic radiology. Under changing tube current and irradition time of the digital radiography (DR) system, we measured the scintillating light and the ESD simultaneously. As experiemtnal results, the total counts of the FOD were changed in a manner similar to the ESDs of the semiconductor dosimeter (SCD). In conclusion, we demonstrated that the proposed FOD minimally affected the diagnostic information of DR image while the SCD caused serious image artifacts.

  15. Laser-driven Sisyphus cooling in an optical dipole trap

    SciTech Connect

    Ivanov, Vladyslav V.; Gupta, Subhadeep

    2011-12-15

    We propose a laser-driven Sisyphus-cooling scheme for atoms confined in a far-off resonance optical dipole trap. Utilizing the differential trap-induced ac Stark shift, two electronic levels of the atom are resonantly coupled by a cooling laser preferentially near the trap bottom. After absorption of a cooling photon, the atom loses energy by climbing the steeper potential, and then spontaneously decays preferentially away from the trap bottom. The proposed method is particularly suited to cooling alkaline-earth-metal-like atoms where two-level systems with narrow electronic transitions are present. Numerical simulations for the cases of {sup 88}Sr and {sup 174}Yb demonstrate the expected recoil and Doppler temperature limits. The method requires a relatively small number of scattered photons and can potentially lead to phase-space densities approaching quantum degeneracy in subsecond time scales.

  16. Intrinsic optical bistability in a strongly driven Rydberg ensemble

    NASA Astrophysics Data System (ADS)

    de Melo, Natalia R.; Wade, Christopher G.; Šibalić, Nikola; Kondo, Jorge M.; Adams, Charles S.; Weatherill, Kevin J.

    2016-06-01

    We observe and characterize intrinsic optical bistability in a dilute Rydberg vapor. The bistability is characterized by sharp jumps between states of low and high Rydberg occupancy with jump-up and -down positions displaying hysteresis depending on the direction in which the control parameter is changed. We find that the shift in frequency of the jump point scales with the fourth power of the principal quantum number. Also, the width of the hysteresis window increases with increasing principal quantum number, before reaching a peak and then closing again. The experimental results are consistent with predictions from a simple theoretical model based on semiclassical Maxwell-Bloch equations including the effects of interaction-induced broadening and level shifts. These results provide insight into the dynamics of driven dissipative systems.

  17. Optically driven Archimedes micro-screws for micropump application.

    PubMed

    Lin, Chih-Lang; Vitrant, Guy; Bouriau, Michel; Casalegno, Roger; Baldeck, Patrice L

    2011-04-25

    Archimedes micro-screws have been fabricated by three-dimensional two-photon polymerization using a Nd:YAG Q-switched microchip laser at 532nm. Due to their small sizes they can be easily manipulated, and made to rotate using low power optical tweezers. Rotation rates up to 40 Hz are obtained with a laser power of 200 mW, i.e. 0.2 Hz/mW. A photo-driven micropump action in a microfluidic channel is demonstrated with a non-optimized flow rate of 6 pL/min. The optofluidic properties of such type of Archimedes micro-screws are quantitatively described by the conservation of momentum that occurs when the laser photons are reflected on the helical micro-screw surface.

  18. Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

    SciTech Connect

    Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

    2007-11-01

    We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity.

  19. Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, Xiaoli

    1989-01-01

    Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

  20. Controlling of the optical properties of the solutions of the PTCDI-C8 organic semiconductor

    NASA Astrophysics Data System (ADS)

    Erdoğan, Erman; Gündüz, Bayram

    2016-09-01

    N,N'-Dioctyl-3,4,9,10 perylenedicarboximide (PTCDI-C8) organic semiconductor have vast applications in solar cells, thermoelectric generators, thin film photovoltaics and many other optoelectronic devices. These applications of the materials are based on their spectral and optical properties. The solutions of the PTCDI-C8 for different molarities were prepared and the spectral and optical mesaurements were analyzed. Effects of the molarities on optical properties were investigated. Vibronic structure has been observed based on the absorption bands of PTCDI-C8 semiconductor with seven peaks at 2.292, 2.451, 2.616, 3.212, 3.851, 4.477 and 4.733 eV. The important spectral parameteres such as molar/mass extinction coefficients, absorption coefficient of the PTCDI-C8 molecule were calculated. Optical properties such as angle of incidence/refraction, optical band gap, real and imaginary parts of dielectric constant, loss factor and electrical susceptibility of the the PTCDI-C8 were obtained. Finally, we discussed these parameters for optoelectronic applications and compared with related parameters in literature.

  1. Rate equations model and optical external efficiency of optically pumped electrically driven terahertz quantum cascade lasers

    NASA Astrophysics Data System (ADS)

    Hamadou, A.; Thobel, J.-L.; Lamari, S.

    2016-10-01

    A four level rate equations model for a terahertz optically pumped electrically driven quantum cascade laser is here introduced and used to model the system both analytically and numerically. In the steady state, both in the presence and absence of the terahertz optical field, we solve the resulting nonlinear system of equations and obtain closed form expressions for the levels occupation, population inversion as well as the mid-infrared pump threshold intensity in terms of the device parameters. We also derive, for the first time for this system, an analytical formula for the optical external efficiency and analyze the simultaneous effects of the cavity length and pump intensity on it. At moderate to high pump intensities, we find that the optical external efficiency scales roughly as the reciprocal of the cavity length.

  2. Investigation of Insulator and Semiconductor Optical Materials for Photonic Applications.

    NASA Astrophysics Data System (ADS)

    Davis, Jeffrey Edward

    1995-01-01

    This dissertation will focus on the characterization of two photonic materials; (1) the potassium dihydrogen phosphate (KDP) family of crystals used for optical harmonic generation and (2) the two general forms of nanoscale silicon --"porous silicon" and isolated silicon nanocrystals that shows fascinating luminescent properties. Four main topics concerning the porous/nanocrystalline silicon research will be presented. First, a distinct difference in the optical properties is found between porous silicon (on silicon wafers) and isolated silicon nanocrystals taken directly from porous silicon wafers. Second, the luminescence of the smallest nanocrystals is found to extend much further into the blue (400-450 nm) end of the spectrum than the common porous silicon luminescence. Third, the photoluminescence decay dynamics of the nanocrystalline system are found not only to be significantly different from the porous silicon system but also aid in elucidating the luminescence mechanism in both systems. Forth, the luminescence of the nanocrystals as a function of the input intensity point to a unique saturation effect and a coupling between the red and blue luminescence. The investigations of KDP and its isomorphs found and characterized a new class of transient electronic defects generated with ultraviolet photons. At room temperatures, the defect forms within 1.6 +/- 0.4 ps after UV two-photon excitation, decays nonexponentially in ~10-20 s, and absorbs from the UV to the near IR. The absorption spectra consist of two broad absorbing transitions centered at ~ 545 nm and ~410 nm. The 545 nm transition is unpolarized while the 410 nm transition is slightly polarized. The defect is identified as a HPO _sp{4}{-} radical and discussion of the formation and decay mechanisms based on intrabond and interbond protonic transport within the hydrogen bond network is presented. These results plus critical examination of defects studies of x-irradiated KDP, KD^*P, and ADP at low

  3. Nonlinear optics response of semiconductor quantum wells under high magnetic fields

    SciTech Connect

    Chemla, D.S.

    1993-07-01

    Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW`s as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H {yields} {infinity}. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed.

  4. Metallic nanoshells with semiconductor cores: optical characteristics modified by core medium properties.

    PubMed

    Bardhan, Rizia; Grady, Nathaniel K; Ali, Tamer; Halas, Naomi J

    2010-10-26

    It is well-known that the geometry of a nanoshell controls the resonance frequencies of its plasmon modes; however, the properties of the core material also strongly influence its optical properties. Here we report the synthesis of Au nanoshells with semiconductor cores of cuprous oxide and examine their optical characteristics. This material system allows us to systematically examine the role of core material on nanoshell optical properties, comparing Cu(2)O core nanoshells (ε(c) ∼ 7) to lower core dielectric constant SiO(2) core nanoshells (ε(c) = 2) and higher dielectric constant mixed valency iron oxide nanoshells (ε(c) = 12). Increasing the core dielectric constant increases nanoparticle absorption efficiency, reduces plasmon line width, and modifies plasmon energies. Modifying the core medium provides an additional means of tailoring both the near- and far-field optical properties in this unique nanoparticle system. PMID:20860401

  5. Optically driven resonance of nanoscale flexural oscillators in liquid.

    PubMed

    Verbridge, Scott S; Bellan, Leon M; Parpia, Jeevak M; Craighead, H G

    2006-09-01

    We demonstrate the operation of radio frequency nanoscale flexural resonators in air and liquid. Doubly clamped string, as well as singly clamped cantilever resonators, with nanoscale cross-sectional dimensions and resonant frequencies as high as 145 MHz are driven in air as well as liquid with an amplitude modulated laser. We show that this laser drive technique can impart sufficient energy to a nanoscale resonator to overcome the strong viscous damping present in these media, resulting in a mechanical resonance that can be measured by optical interference techniques. Resonance in air, isopropyl alcohol, acetone, water, and phosphate-buffered saline is demonstrated for devices having cross-sectional dimensions close to 100 nm. For operation in air, quality factors as high as 400 at 145 MHz are demonstrated. In liquid, quality factors ranging from 3 to 10 and frequencies ranging from 20 to 100 MHz are observed. These devices, and an all-optical actuation and detection system, may provide insight into the physics of the interaction of nanoscale mechanical structures with their environments, greatly extending the viscosity range over which such small flexural resonant devices can be operated. PMID:16968035

  6. Optically driven quantum networks: Applications in molecular electronics

    NASA Astrophysics Data System (ADS)

    Körner, H.; Mahler, G.

    1993-07-01

    Progress in nanostructuring tends to provide us with synthetic structures for which, for example, energy or time scales can be adjusted in such a way that quantum systems with unusual physical properties emerge. The challenge of molecular electronics is to make these properties represent computer functions. We investigate a quantum network model consisting of a modular array of localized few-level subsystems. When driven optically, a diagonal (energy renormalizing) interaction among these subsystems is shown to lead to a complex stochastic dynamics, which may be interpreted as a highly parallel Monte-Carlo-type simulation ``programmed'' by the external light field. A first application is demonstrated in terms of a two-dimensional kinetic Ising model with J(Rn-Rm)~||Rn-Rm||-3. In another application the nonlocal nonlinear optical properties are exploited in specific pump and probe scenarios: Under certain conditions simple image processing tasks are performed. A possible realization of such quantum network models by an array of charge-transfer quantum dots is discussed.

  7. Optical properties of three-dimensional arrays of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Kim, Bosang

    The major part of this thesis is devoted to interdot interactions in CdSe nanocrystal arrays at elevated pressure. Three-dimensional arrays of organically passivated CdSe nanocrystals were investigated under hydrostatic pressure using photoluminescence (PL) and absorption spectroscopies. Interdot separations were varied coarsely by varying the organic ligand on the nanocrystal and finely by applying hydrostatic pressure. The PL and absorption spectra of solutions and arrays of CdSe nanocrystals capped by tri-n-octylphosphine oxide (TOPO) or tri-n-butylphosphine oxide (TBPO) are the same up to 60 kbar. In contrast, there is a distinct difference between the pressure dependence of CdSe/pyridine dots in solution and arrays. This different dependence can be attributed to several factors, including possible carrier coupling between neighboring nanoparticles through the organic ligands capping the respective particles that would lead to a decrease in carrier confinement energy. The kinetics of solvent and organic ligand of CdSe nanocrystal arrays during the assembly were quantitatively investigated. Attenuated total reflection is shown to be a quantitative real-time probe of several important features of nanocrystal self-assembly by following the infrared absorption of the solvent and the organic ligands that passivate the nanocrystal surface. During the self-assembly of a 250 monolayer array of CdSe nanocrystals capped by pyridine, the pyridine solvent molecules evaporate in ˜30--40 min and the pyridine-capping molecules leave the array very slowly, apparently limited by diffusion, with ˜30 +/- 8% remaining after three days. The method of spin-assisted self-assembly was used to produce sub-micron thick films of CdSe nanocrystals. The uniformity was investigated with various spin rate and solvents; the films made from a hexane/octane mixture at a spin rate of 100 RPM with intermittent pauses resulted in the least fluctuations in film thickness. Using optical microscopy

  8. A study on the optical parts for a semiconductor laser module

    NASA Astrophysics Data System (ADS)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik; Jang, Kwang-Ho; Kang, Seung-Goo

    2014-11-01

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  9. Optical waveguide beam splitters based on hybrid metal-dielectric-semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Yunyun; Liang, Junwu; Zhang, Qinglin; Zhou, Zidong; Li, Honglai; Fan, Xiaopeng; Wang, Xiaoxia; Fan, Peng; Yang, Yankun; Guo, Pengfei; Zhuang, Xiujuan; Zhu, Xiaoli; Liao, Lei; Pan, Anlian

    2015-11-01

    Miniature integration is desirable for the future photonics circuit. Low-dimensional semiconductor and metal nanostructures is the potential building blocks in compact photonic circuits for their unique electronic and optical properties. In this work, a hybrid metal-dielectric-semiconductor nanostructure is designed and fabricated to realizing a nano-scale optical waveguide beam splitter, which is constructed with the sandwiched structure of a single CdS nanoribbon/HfO2 thin film/Au nanodisk arrays. Micro-optical investigations reveal that the guided light outputting at the terminal end of the CdS ribbon is well separated into several light spots. Numerical simulations further demonstrate that the beam splitting mechanism is attributed to the strong electromagnetic coupling between the Au nanodisks and light guided in the nanoribbon. The number of the split beams (light spots) at the terminal end of the nanoribbon is mainly determined by the number of the Au nanodisk rows, as well as the distance of the blank region between the nanodisks array and the end of the CdS ribbon, owing to the interference between the split beams. These optical beam splitters may find potential applications in high-density integrated photonic circuits and systems.

  10. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    NASA Astrophysics Data System (ADS)

    Bakry, A.; Abdulrhmann, S.; Ahmed, M.

    2016-06-01

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  11. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    PubMed Central

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-01-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles. PMID:26314911

  12. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

    NASA Astrophysics Data System (ADS)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

    2010-02-01

    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  13. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

    DOE PAGES

    Donev, E. U.; Suh, J. Y.; Lopez, R.; Feldman, L. C.; Haglund, R. F.

    2008-01-01

    We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model.more » The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.« less

  14. Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

    2003-01-01

    Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

  15. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    SciTech Connect

    Chang-Hwan Kim

    2003-12-12

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  16. High efficiency 160 Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Han, Huining; Zhang, Fangdi; Yang, Wei; Cai, Libo; Zhang, Min; Ye, Peida

    2007-11-01

    Proposed in this paper is a high efficient 160Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot Semiconductor optical amplifier (QDSOA -TOAD). The performance of the wavelength converter under various operating conditions, such as different injected current densities, input pulse widths and input control pulse energies, is analyzed in terms of contrast ratio (CR) through numerical simulations. With the properly chosen parameters, a wavelength-converted signal with CR over 19.48 can be obtained.

  17. Semiconductor laser precision gain switching experiment for Gbaud ternary optical signaling

    SciTech Connect

    O'Dowd, R.F.; Byrne, D.M.

    1989-06-01

    An experiment was carried out to gain switch a 1.3 /mu/m semiconductor laser at gigabit/second rates and with sufficient electrical drive precision to validate a previous theoretical study. The method takes advantage of the relaxation oscillation phenomenon to produce shortened, single, optical pulses by careful control of the electrical bias, drive excursion, and pulse duration. It was demonstrated that two-level and three-level (i.e., ternary) optical data stream generation could be reliably achieved with only two electrical drive levels. The latter was performed by control of the drive pulse duration and is the first demonstration of a three-level PCM system based on two-level gain switching. Furthermore, the pulse shortening which results recommends this technique for optical TDM of multiple laser transmitters. This combination of formats may ultimately allow the 100 Gbit/s target to be achieved.

  18. High-stability optical components for semiconductor laser intersatellite link experiment (SILEX) project

    NASA Astrophysics Data System (ADS)

    Lepretre, Francois

    1994-09-01

    Within the framework of a MATRA MARCONI SPACE FRANC contract for the European Space Agency, MATRA DEFENSE - DOD/UAO have developed, produced and tested 9 laser diode collimators, 52 optical components (anamorphoser, mirrors, dichroic splitters, redundancy module) and 9 interferential filters. All these space equipments must be integrated into the optical head of the SILEX (Semi-conductor Laser Intersatellite Link Experiment) bench. The SILEX experiment consists in transferring data from a low altitude satellite (SPOT 4) to a satellite in geostationary orbit (ARTEMIS) via beam generated by a laser diode (60 mW Cw). Very low emitted flux and long distance between the two satellites gives rise to the following technical difficulties: high angular (1 (mu) rad) and transverse stability requirements, requirement for high transmission and high rejection narrow band filters, in order to differentiate the transmit and receive channels, necessity of a very good optical wavefront, wavelength range 815-825 nm, 843-853 nm.

  19. Phenomenological model for charge dynamics and optical response of disordered systems: Application to organic semiconductors

    NASA Astrophysics Data System (ADS)

    Fratini, S.; Ciuchi, S.; Mayou, D.

    2014-06-01

    We provide a phenomenological formula that describes the low-frequency optical absorption of charge carriers in disordered systems with localization. This allows us to extract, from experimental data on the optical conductivity, the relevant microscopic parameters determining the transport properties, such as the carrier localization length and the elastic and inelastic scattering times. This general formula is tested and applied here to organic semiconductors, where dynamical molecular disorder is known to play a key role in the transport properties. The present treatment captures the basic ideas underlying the recently proposed transient localization scenario for charge transport, extending it from the dc mobility to the frequency domain. When applied to existing optical measurements in rubrene field-effect transistors, our analysis provides quantitative evidence for the transient localization phenomenon. Possible applications to other disordered electronic systems are briefly discussed.

  20. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  1. Semiconductor ring lasers with delayed optical feedback: low-frequency fluctuations

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Mashal, Lilia; Nguimdo, Romain Modeste; Cornelles-Soriano, Miguel C.; Danckaert, Jan; Verschaffelt, Guy

    2014-05-01

    Semiconductor lasers subject to external feedback are known to exhibit a wide variety of dynamical regimes desired for some applications such as chaos cryptography, random bit generation, and reservoir computing. Low-frequency fluctuations is one of the most frequently encountered regimes. It is characterized by a fast drop in laser intensity followed by a gradual recovery. The duration of this recovery process is irregular and of the order of hundred nanoseconds. The average time between dropouts is much larger than the laser system characteristic time-scales. Semiconductor ring lasers are currently the focus of a rapidly thriving research activity due to their unique feature of directional bistability. They can be employed in systems for all-optical switching, gating, wavelength-conversion functions, and all-optical memories. Semiconductor ring lasers do not require cleaved facets or gratings for optical feedback and are thus particularly suited for monolithic integration. We experimentally and numerically address the issue of low-frequency fluctuations considering a semiconductor ring laser in a feedback configuration where only one directional mode is re-injected into the same directional mode, a so-called single self-feedback. We have observed that the system is very sensitive to the feedback strength and the injection current. In particular, the power dropouts are more regular when the pump current is increased and become less frequent when the feedback strength is increased. In addition, we find two different recovery processes after the power dropouts of the low-frequency fluctuations. The recovery can either occur via pulses or in a stepwise manner. Since low-frequency fluctuations are not specific to semiconductor ring lasers, we expect these recovery processes to appear also in VCSELs and edge-emitting lasers under similar feedback conditions. The numerical simulations also capture these different behaviors, where the representation in the phase space of

  2. Optical signal processing with a network of semiconductor optical amplifiers in the context of photonic reservoir computing

    NASA Astrophysics Data System (ADS)

    Vandoorne, Kristof; Fiers, Martin; Verstraeten, David; Schrauwen, Benjamin; Dambre, Joni; Bienstman, Peter

    2011-01-01

    Photonic reservoir computing is a hardware implementation of the concept of reservoir computing which comes from the field of machine learning and artificial neural networks. This concept is very useful for solving all kinds of classification and recognition problems. Examples are time series prediction, speech and image recognition. Reservoir computing often competes with the state-of-the-art. Dedicated photonic hardware would offer advantages in speed and power consumption. We show that a network of coupled semiconductor optical amplifiers can be used as a reservoir by using it on a benchmark isolated words recognition task. The results are comparable to existing software implementations and fabrication tolerances can actually improve the robustness.

  3. New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

    NASA Astrophysics Data System (ADS)

    Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

    2002-05-01

    The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

  4. Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.

    PubMed

    Wang, Peng; Xiong, Jintian; Zhang, Tingting; Chen, Dalei; Xiang, Peng; Zheng, Jilin; Zhang, Yunshan; Li, Ruoming; Huang, Long; Pu, Tao; Chen, Xiangfei

    2015-08-10

    A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset.

  5. Optical properties and electronic band structure of AgGaTe2 chalcopyrite semiconductor.

    PubMed

    Arai, Shinya; Ozaki, Shunji; Adachi, Sadao

    2010-02-10

    The optical properties of AgGaTe(2) chalcopyrite semiconductor are studied by optical absorption, spectroscopic ellipsometry (SE), and thermoreflectance (TR) spectroscopy. Optical absorption spectra suggest that AgGaTe(2) is a direct-gap semiconductor having a bandgap of approximately 1.2 eV at T=300 K. The pseudodielectric-function spectra of AgGaTe(2) are determined by SE in the range between E=1.2 and 5.2 eV for both states of polarization. These spectra reveal distinct structures at energies of the critical points in the Brillouin zone. The TR spectra are also measured in the E=1.0-5.3 eV ranges at T=20 K-300 K. The spin-orbit and crystal-field splitting parameters of AgGaTe(2) are determined to be Delta(so)=0.70 eV and Delta(cr)=-0.23 eV, respectively.

  6. Characterization of CdSe-nanocrystals used in semiconductors for aerospace applications: Production and optical properties

    NASA Astrophysics Data System (ADS)

    Hegazy, Maroof A.; Abd El-Hameed, Afaf M.

    2014-06-01

    Semiconductor nanocrystals (NC’s) are the materials with dimensions less than 10 nm. When the dimensions of nanocrystals are reduced the bulk bohr diameter, the photo generated electron-hole pair becomes confined and nanocrystal exhibits size dependent upon optical properties. This work is focused on the studying of CdSe semiconductor nanocrystals. These nanocrystals are considered as one of the most widely studies semiconductors because of their size - tunable optical properties from the visible spectrum. CdSe-nanocrystals are produced and obtained throughout the experimental setup initiated at Nano-NRIAG Unit (NNU), which has been constructed and assembled at NRIAG institute. This unit has a specific characterization for preparing chemical compositions, which may be used for solar cell fabrications and space science technology. The materials prepared included cadmium oxide and selinid have sizes ranging between 2.27 nm and 3.75 nm. CdSe-nanocrystals are synthesized in “TOP/TOPO (tri-octyl phosphine/tri-octyl phosphine oxide). Diagnostic tools, include UV analysis, TEM microscope, and X-ray diffraction, which are considered for the analytical studies of the obtained materials. The results show that, in this size regime, the generated particles have unique optical properties, which is achieved from the UV analysis. Also, the TEM image analysis shows the size and shape of the produced particles. These studies are carried out to optimize the photoluminescent efficiency of these nanoparticles. Moreover, the data revealed that, the grain size of nanocrystals is dependent upon the growth time in turn, it leads to a change in the energy gap. Some applications of this class of materials are outlined.

  7. Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction.

    PubMed

    Winget, Paul; Schirra, Laura K; Cornil, David; Li, Hong; Coropceanu, Veaceslav; Ndione, Paul F; Sigdel, Ajaya K; Ginley, David S; Berry, Joseph J; Shim, Jaewon; Kim, Hyungchui; Kippelen, Bernard; Brédas, Jean-Luc; Monti, Oliver L A

    2014-07-16

    The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties. PMID:24830796

  8. Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

    SciTech Connect

    Oh, Changhoon; Ryoo, Hoonchul; Lee, Hyungwoo; Hahn, Jae W.; Kim, Se-Yeon; Yi, Hun-Jung

    2010-10-15

    We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO{sub 2} film on a silicon wafer.

  9. Second-order nonlinear optical susceptibilities of AIIBVI and AIIIBV semiconductors

    NASA Astrophysics Data System (ADS)

    Kumar, V.; Sinha, Anita; Singh, B. P.; Chandra, S.

    2016-10-01

    The second-order nonlinear optical (NLO) susceptibilities χ123(2) of AIIBVI and AIIIBV groups of semiconductors with zincblende (ZB) structure have been studied. Two relations have been proposed for the calculation of χ123(2) (0) at zero frequency. One is based on bond charge model of Levine and the other is based on plasma oscillations theory of solids. Calculated values of χ123(2) (0) for all compounds are in fair agreement with the available experimental and reported values.

  10. Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers

    SciTech Connect

    Mezzapesa, F. P. Brambilla, M.; Dabbicco, M.; Scamarcio, G.; Columbo, L. L.; Vitiello, M. S.

    2014-01-27

    To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (≅40 mW/cm{sup 2}) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.

  11. All-optical depletion of dark excitons from a semiconductor quantum dot

    SciTech Connect

    Schmidgall, E. R.; Schwartz, I.; Cogan, D.; Gershoni, D.; Gantz, L.; Heindel, T.; Reitzenstein, S.

    2015-05-11

    Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.

  12. Anticipation in the synchronization of chaotic semiconductor lasers with optical feedback.

    PubMed

    Masoller, C

    2001-03-26

    The synchronization of chaotic semiconductor lasers with optical feedback is studied numerically in a one-way coupling configuration, in which a small amount of the intensity of one laser (master laser) is injected coherently into the other (slave laser). A regime of anticipated synchronization is found, in which the intensity of the slave laser is synchronized to the future chaotic intensity of the master laser. Anticipation is robust to small noise and parameter mismatches, but in this case the synchronization is not complete. It is also shown that anticipated synchronization occurs in coupled time-delay systems, when the coupling has a delay that is less than the delay of the systems.

  13. Tunable semiconductor laser with an acousto-optic filter in an external fibre cavity

    SciTech Connect

    Andreeva, E V; Mamedov, D S; Ruenkov, A A; Shramenko, M V; Magdich, L N; Yakubovich, S D

    2006-04-30

    A tunable semiconductor laser with a laser amplifier based on a double-pass superluminescent diode as an active element and an acousto-optic filter in an external fibre cavity as a selective element is investigated. A continuous spectral tuning is achieved in a band of width 60 nm centered at a wavelength of 845 nm and the 'instant' linewidth below 0.05 nm is obtained. The sweep frequency within the tuning range achieves 200 Hz. The cw power at the output of a single-mode fibre was automatically maintained constant at the level up to 1.5 mW. (lasers and amplifiers)

  14. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    SciTech Connect

    Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  15. Theory of optical multistability and chaos in a resonant-type semiconductor laser amplifier

    SciTech Connect

    Otsuka, K.; Iwamura, H.

    1983-11-01

    Multistable light amplifications and self-pulsations in a resonant-type semiconductor laser diode (LD) amplifier are predicted. A basic idea is derived from the active layer refractive index dependence on carrier density. An LD amplifier is shown to act as a high-Q nonlinear Fabry-Perot interferometer with true optical gain and nonlinear refraction. Periodic and chaotic self-pulsations are shown to occur in the regime where the delay time of the feedback is smaller than the carrier lifetime.

  16. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    SciTech Connect

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

  17. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    DOE PAGES

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; et al

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less

  18. Dye-sensitised semiconductors modified with molecular catalysts for light-driven H2 production.

    PubMed

    Willkomm, Janina; Orchard, Katherine L; Reynal, Anna; Pastor, Ernest; Durrant, James R; Reisner, Erwin

    2016-01-01

    The development of synthetic systems for the conversion of solar energy into chemical fuels is a research goal that continues to attract growing interest owing to its potential to provide renewable and storable energy in the form of a 'solar fuel'. Dye-sensitised photocatalysis (DSP) with molecular catalysts is a relatively new approach to convert sunlight into a fuel such as H2 and is based on the self-assembly of a molecular dye and electrocatalyst on a semiconductor nanoparticle. DSP systems combine advantages of both homogenous and heterogeneous photocatalysis, with the molecular components providing an excellent platform for tuning activity and understanding performance at defined catalytic sites, whereas the semiconductor bridge ensures favourable multi-electron transfer kinetics between the dye and the fuel-forming electrocatalyst. In this tutorial review, strategies and challenges for the assembly of functional molecular DSP systems and experimental techniques for their evaluation are explained. Current understanding of the factors governing electron transfer across inorganic-molecular interfaces is described and future directions and challenges for this field are outlined.

  19. A silicon-nanowire memory driven by optical gradient force induced bistability

    SciTech Connect

    Dong, B.; Cai, H. Gu, Y. D.; Kwong, D. L.; Chin, L. K.; Ng, G. I.; Ser, W.; Huang, J. G.; Yang, Z. C.; Liu, A. Q.

    2015-12-28

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

  20. New time-space-time optical packet switching node based on nonlinear polarization rotation of a semiconductor optical amplifier.

    PubMed

    Yongjun, Wang; Qinghua, Tian; Zhi, Wang; Xiaoqing, Zhu; Chen, Wu; Chao, Shang; Xin, Xiangjun

    2016-03-10

    In this paper, we establish a simple model to analyze the semiconductor optical amplifier's (SOA) nonlinear polarization rotation (NPR) and acquire the variable curves of phase difference between TE and TM modes with bias current, pump power, probe power, and linewidth enhancement factor (LEF). The results indicate that the optical switch based on the SOA's NPR can be realized by changing the pump's optical power and the main operating parameters, such as bias current and hold beam power, and then the pump power can be determined. On this basis, a time-space-time (T-S-T) optical packet switching node is proposed, in which the SOA's NPR switch is the basic element. Then, the T-S and S-T experimental systems are set up, and the experimental results demonstrate that the proposed switch scheme can implement the optical switching function in accordance with the routing requirement. The signal-to-noise ratio (SNR) exceeds 20 dB, and the extinction ratio (ER) is more than 10 dB after being delayed and switched in the node.

  1. Photoinduced superconductivity in semiconductors

    NASA Astrophysics Data System (ADS)

    Goldstein, Garry; Aron, Camille; Chamon, Claudio

    2015-02-01

    We show that optically pumped semiconductors can exhibit superconductivity. We illustrate this phenomenon in the case of a two-band semiconductor tunnel-coupled to broad-band reservoirs and driven by a continuous wave laser. More realistically, we also show that superconductivity can be induced in a two-band semiconductor interacting with a broad-spectrum light source. We furthermore discuss the case of a three-band model in which the middle band replaces the broad-band reservoirs as the source of dissipation. In all three cases, we derive the simple conditions on the band structure, electron-electron interaction, and hybridization to the reservoirs that enable superconductivity. We compute the finite superconducting pairing and argue that the mechanism can be induced through both attractive and repulsive interactions and is robust to high temperatures.

  2. Peculiarities of two-photon optical nutation of biexcitons in semiconductors taking into account elastic interparticle interactions

    SciTech Connect

    Khadzhi, P I; Vasiliev, V V

    2010-12-09

    The peculiarities of two-photon nutation in a system of coherent biexcitons in CuCl semiconductors are considered taking into account the elastic biexciton - biexciton interaction. It is shown that depending on the system parameters, optical nutation represents a process of periodic transformation of photon pairs into biexcitons and vice versa. The possibility of exercising the phase control of the optical nutation process is predicted. (nonlinear optical phenomena)

  3. Superresolution Structure Optical Disk with Semiconductor-Doped Glass Mask Layer Containing CdSe Nanoparticles

    NASA Astrophysics Data System (ADS)

    Yeh, Tung‑Ti; Wang, Jr‑Hau; Hsieh, Tsung‑Eong; Shieh, Han‑Ping D.

    2006-02-01

    In this work, we demonstrate a distinct superresolution phenomenon and signal properties of an optical disk with a semiconductor-doped glass (SDG) mask layer containing CdSe nanoparticles. It was found that the 69 nm marks could be consistently retrieved at reading power (Pr) = 4 mW with carrier-to-noise ratio (CNR) = 13.56 dB. The signals were clearly resolved with CNRs nearly equal to 40 dB at Pr=4 mW when the recorded marks were larger than 100 nm. The cyclability test indicated that the CdSe-SiO2 SDG layer might serve as a stable and reliable optical mask layer in 105 readout cycles.

  4. Magnetic field control of the optical absorption in two-dimensional semiconductor rings

    NASA Astrophysics Data System (ADS)

    Olendski, Oleg; Barakat, Thabit

    2014-03-01

    Linear and nonlinear optical absorption coefficients of the two-dimensional semiconductor ring in the perpendicular magnetic field B are calculated within independent electron approximation. Characteristic feature of the energy spectrum are crossings of the levels with adjacent nonpositive magnetic quantum numbers m as the intensity B changes. It is shown that the absorption coefficient of the associated optical transition is drastically decreased at the fields corresponding to the crossing. Proposed model of the Volcano disc allows to get simple mathematical analytical results which allow clear physical interpretation. An interplay between positive linear and intensity-dependent negative cubic absorption coefficients is discussed; in particular, critical light intensity at which additional resonances appear in the total absorption dependence on the light frequency, is calculated as a function of the magnetic field and levels' broadening. Authors extend their appreciation to the Deanship of Scientific Research at King Saud University for funding this work through research group no RGP-VPP-217.

  5. Fiber Bragg grating dynamic strain sensor using an adaptive reflective semiconductor optical amplifier source.

    PubMed

    Wei, Heming; Tao, Chuanyi; Zhu, Yinian; Krishnaswamy, Sridhar

    2016-04-01

    In this paper, a reflective semiconductor optical amplifier (RSOA) is configured to demodulate dynamic spectral shifts of a fiber Bragg grating (FBG) dynamic strain sensor. The FBG sensor and the RSOA source form an adaptive fiber cavity laser. As the reflective spectrum of the FBG sensor changes due to dynamic strains, the wavelength of the laser output shifts accordingly, which is subsequently converted into a corresponding phase shift and demodulated by an unbalanced Michelson interferometer. Due to the short transition time of the RSOA, the RSOA-FBG cavity can respond to dynamic strains at high frequencies extending to megahertz. A demodulator using a PID controller is used to compensate for low-frequency drifts induced by temperature and large quasi-static strains. As the sensitivity of the demodulator is a function of the optical path difference and the FBG spectral width, optimal parameters to obtain high sensitivity are presented. Multiplexing to demodulate multiple FBG sensors is also discussed. PMID:27139682

  6. Universal solders for direct and powerful bonding on semiconductors, diamond, and optical materials

    NASA Astrophysics Data System (ADS)

    Mavoori, Hareesh; Ramirez, Ainissa G.; Jin, Sungho

    2001-05-01

    The surfaces of electronic and optical materials such as nitrides, carbides, oxides, sulfides, fluorides, selenides, diamond, silicon, and GaAs are known to be very difficult to bond with low melting point solders (<300 °C). We have achieved a direct and powerful bonding on these surfaces by using low temperature solders doped with rare-earth elements. The rare earth is stored in micron-scale, finely-dispersed intermetallic islands (Sn3Lu or Au4Lu), and when released, causes chemical reactions at the interface producing strong bonds. These solders directly bond to semiconductor surfaces and provide ohmic contacts. They can be useful for providing direct electrical contacts and interconnects in a variety of electronic assemblies, dimensionally stable and reliable bonding in optical fiber, laser, or thermal management assemblies.

  7. Bound states in optical absorption of semiconductor quantum wells containing a two-dimensional electron Gas

    PubMed

    Huard; Cox; Saminadayar; Arnoult; Tatarenko

    2000-01-01

    The dependence of the optical absorption spectrum of a semiconductor quantum well on two-dimensional electron concentration n(e) is studied using CdTe samples. The trion peak (X-) seen at low n(e) evolves smoothly into the Fermi edge singularity at high n(e). The exciton peak (X) moves off to high energy, weakens, and disappears. The X,X- splitting is linear in n(e) and closely equal to the Fermi energy plus the trion binding energy. For Cd0.998Mn0.002Te quantum wells in a magnetic field, the X,X- splitting reflects unequal Fermi energies for M = +/-1/2 electrons. The data are explained by Hawrylak's theory of the many-body optical response including spin effects.

  8. Nonlinear optical parameters of nonparabolic semiconductor plasmas: Influence of energy dependent effective mass

    SciTech Connect

    Daulatabadkar, Pragya Ghosh, S.

    2015-07-31

    An investigation is carried out in III-V compound semiconductor when a strong transverse magnetic field is applied. By considering the heating effect of carriers, an analytical investigation is made for n-InSb in which the nonlinearity arises due to dependence of effective mass on electronic temperature. At optical frequencies the temperature dependence part of momentum transfer collision frequency is assumed to be negligibly small. The linear and nonlinear parts of optical parameters are evaluated through the first and third order susceptibility of InSb sample. The analysis reveals that the nonlinear part of refractive index increases with intensity which leads to self-focusing of the beam. Thus by adjusting the doping concentration pump frequency and intensity, one may achieve desired nonlinearity in the crystal. Hence n - InSb sample establishes its potentials as candidate material for fabrication of cubic nonlinear devices.

  9. Semiconductor optical amplifier direct modulation with double-stage birefringent fiber loop

    NASA Astrophysics Data System (ADS)

    Engel, Thomas; Rizou, Zoe V.; Zoiros, Kyriakos E.; Morel, Pascal

    2016-06-01

    The feasibility of cascading two birefringent fiber loops (BFLs) for directly modulating a conventional semiconductor optical amplifier (SOA) at a faster data rate than that being possible by its limited electrical bandwidth is demonstrated for the first time. The experimental results reveal the improvements in the quality characteristics of the encoded signal compared to those achieved with a single-stage BFL. The observed trends are complemented by numerical simulations, which allow to investigate the impact of the double-stage BFL detuning and specify how this critical parameter must be selected for enhanced performance. Provided that it is properly tailored, the proposed optical notch filtering scheme efficiently compensates for the pattern-dependent SOA response and enables this element to be employed as intensity modulator with improved performance at enhanced data speeds.

  10. Coherent optical spectroscopy of a strongly coupled semiconductor microcavity quantum-dot system

    NASA Astrophysics Data System (ADS)

    Srinivasan, Kartik; Painter, Oskar

    2008-03-01

    Chip-based systems involving a semiconductor microcavity coupled to an embedded quantum dot (QD) offer a scalable, stable platform for optical cavity quantum electrodynamics. To harness this potential in a manner consistent with many protocols for quantum information processing, the system must be coherently probed and manipulated. However, experiments in these systems have largely relied on incoherent excitation through photoluminescence (PL). Here, we describe recent experiments [1] in which a fiber taper waveguide is used to perform steady-state coherent linear and nonlinear optical spectroscopy of a strongly coupled microcavity-QD system, probing the system on its photonic channel (rather than its matter channel, as in PL). Under weak driving, vacuum Rabi splitting is observed, while increasing the drive strength reveals saturation for an average intracavity photon number of less than one. [1] K. Srinivasan and O. Painter (2007), to appear in Nature, Dec. 6, 2007 (preprint: physics/0707.3311).

  11. Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Khmelinskii, Igor; Makarov, Vladimir I.

    2016-04-01

    We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.

  12. Optical surface polaritons of TM type at the nonlinear semiconductor-nanocomposite interface

    NASA Astrophysics Data System (ADS)

    Panyaev, I. S.; Rozhleis, I. A.; Sannikov, D. G.

    2016-03-01

    TM-polarized optical surface polaritons in a nonlinear semiconductor-nanocomposite guiding structure have been considered. The nanocomposite consists of alternating layers of bismuth-containing garnet ferrite (BIG, Lu3 - x Bi x Fe5 - y Ga y O12) and gallium-gadolinium garnet (Gd3Ga5O12), and the semiconductor ( n-InSb) has a cubic nonlinearity and is characterized by two components of the nonlinear susceptibility tensor. With allowance for the anisotropy of the optical properties of the nanocomposite, caused by the magnetization of the BIG layers, the dispersion relation has been obtained and analyzed and its solutions are shown to split into two pairs of high- and low-frequency branches. The influence of the electric field at the interface on the wave characteristics and the existence domains of nonlinear surface TM polaritons has been studied. By solving the inverse problem of finding the profile of the longitudinal electric component of the surface polariton, it has been found that the nonlinearity gives rise to soliton-like wave fields.

  13. Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

    NASA Astrophysics Data System (ADS)

    Xu, Kaikai; Zhang, Zhengyuan; Zhang, Zhengping

    2016-01-01

    A silicon p-channel metal oxide semiconductor field-effect transistor (Si-PMOSFET) that is fully compatible with the standard complementary metal oxide semiconductor process is investigated based on the phenomenon of optical radiation observed in the reverse-biased p-n junction in the Si-PMOSFET device. The device can be used either as a two-terminal silicon diode light-emitting device (Si-diode LED) or as a three-terminal silicon gate-controlled diode light-emitting device (Si gate-controlled diode LED). It is seen that the three-terminal operating mode could provide much higher power transfer efficiency than the two-terminal operating mode. A new solution based on the concept of a theoretical quantum efficiency model combined with calculated results is proposed for interpreting the evidence of light intensity reduction at high operating voltages. The Si-LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

  14. Bistability characteristics of different types of optical modes amplified by quantum dot vertical cavity semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Qasaimeh, Omar

    2016-04-01

    We have studied the characteristics of optical bistability of different types of optical modes amplified by small-size quantum dot vertical cavity semiconductor optical amplifiers operated in reflection. Our analysis reveals that TE01 mode exhibits stronger intensity-dependent non-linearity in small radius devices, which results in stronger optical phase modulation and therefore larger hysteresis width compared with the other modes. The effect of the wavelength detuning of the input signal on the shape of the hysteresis loop is studied. We find that butterfly hysteresis loop exhibits the largest hysteresis width compared with clockwise and counterclockwise loops. Our analysis reveals that doping the quantum dots with p-type doping slightly reduces the hysteresis width while doping the dots with n-type doping clearly increases the hysteresis width for any wavelength detuning. We estimate that the hysteresis width of quantum dot active layer will exhibit higher hysteresis width compared with quantum well active layer having the same threshold gain.

  15. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

    SciTech Connect

    Petrunov, A. N.; Podoskin, A. A.; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A. Nalet, T. A.; Fetisova, N. V.; Vavilova, L. S.; Lyutetskiy, A. V.; Alekseev, P. A.; Titkov, A. N.; Tarasov, I. S.

    2010-06-15

    Asymmetric heterostructures with an ultrathick waveguide based on an AlGaAs/GaAs alloy system that allow lasing at a wavelength of 905 nm have been developed and fabricated by hydride metalorganic vapor-phase epitaxy. The internal optical loss and internal quantum efficiency of semiconductor lasers based on such structures were 0.7 cm{sup -1} and 97%, respectively. It is shown that the highest output optical power of laser diodes with antireflecting (SiO{sub 2}) and reflecting (Si/SiO{sub 2}) coatings deposited on untreated Fabry-Perot cavity facets obtained by cleaving in an oxygen atmosphere reached 67 W in the pulsed mode and is limited by mirror damage. Treatment of Fabry-Perot cavity facets by etching in argon plasma and the formation of coatings with passivating and oxygen-blocking GaN and Si{sub 3}N{sub 4} layers allowed an increase in the maximum output optical power to 120 W. Mirror damage was not observed at the attained output optical power.

  16. Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot

    NASA Astrophysics Data System (ADS)

    Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo

    2016-10-01

    Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.

  17. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    PubMed Central

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  18. Unexpected magnetic semiconductor behavior in zigzag phosphorene nanoribbons driven by half-filled one dimensional band.

    PubMed

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-03-09

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices.

  19. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    NASA Astrophysics Data System (ADS)

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-03-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV) (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices.

  20. Unexpected magnetic semiconductor behavior in zigzag phosphorene nanoribbons driven by half-filled one dimensional band.

    PubMed

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  1. Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

    PubMed Central

    Shakhvorostov, Dmitry; Nistor, Razvan A.; Krusin-Elbaum, Lia; Martyna, Glenn J.; Newns, Dennis M.; Elmegreen, Bruce G.; Liu, Xiao-hu; Hughes, Zak E.; Paul, Sujata; Cabral, Cyril; Raoux, Simone; Shrekenhamer, David B.; Basov, Dimitri N.; Song, Young; Müser, Martin H.

    2009-01-01

    Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class. PMID:19549858

  2. Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications

    PubMed Central

    Bilenca, A.; Yun, S. H.; Tearney, G. J.; Bouma, B. E.

    2009-01-01

    Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift–broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging. PMID:16544615

  3. Slow and fast light using nonlinear processes in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Pesala, Bala Subrahmanyam

    Ability to control the velocity of light is usually referred to as slow or fast light depending on whether the group velocity of light is reduced or increased. The slowing of light as it passes through the glass to 2/3rd its original value is a well known phenomenon. This slowing down happens due to the interaction of light with the electrons in the medium. As a general principle, stronger the interaction, larger is the reduction in velocity. Recently, a fascinating field has emerged with the objective of not only slowing down the velocity of light but also speeding it up as it goes through the medium by enhancing light-matter interaction. This unprecedented control opens up several exciting applications in various scientific disciplines ranging from nonlinear science, RF photonics to all-optical networks. Initial experiments succeeded in reducing the velocity of light more than a million times to a very impressive 17 m/s. This speed reduction is extremely useful to enhance various nonlinear processes. For RF photonic applications including phased array antennas and tunable filters, control of phase velocity of light is required while control of group velocity serves various functionalities including packet synchronization and contention resolution in an optical buffer. Within the last 10 years, several material systems have been proposed and investigated for this purpose. Schemes based on semiconductor systems for achieving slow and fast light has the advantage of extremely high speed and electrical control. In addition, they are compact, operate at room temperature and can be easily integrated with other optical subsystems. In this work, we propose to use nonlinear processes in semiconductor optical amplifiers (SOAs) for the purpose of controlling the velocity of light. The versatility of the physical processes present in SOAs enables the control of optical signals ranging from 1GHz to larger than 1000 GHz (1 THz). First, we experimentally demonstrate both

  4. Synthesis and nonlinear optical properties of semiconductor nanoparticles within ionomer solutions

    NASA Astrophysics Data System (ADS)

    Jia, Wenling

    For the first time, optical limiting performance of semiconductor nanoparticles was investigated thoroughly against particle size and composition with nanosecond laser pulses at 532 nm as well as picosecond laser pulses in the wavelength range between 680 and 900 nm. Measurement from degenerate four-wave mixing showed the dominance of third-order optical nonlinearity. A combination of optical limiting and DFWM measurements was used to extract the bound electronic nonlinear refraction. CdS(2), core-shell CdS(2)/Ag2S and ternary Cd1-xAgxS nanoparticles were prepared and stabilized within random/block ionomer solutions with a particle diameter range between 2 to 9 nm. UV-visible absorption spectra indicated the shift of absorption edge with respect to bulk materials. Selected area diffraction results showed for the first time that cubic CdS2 formed in solutions at room temperature. The results from the factorial experimental design revealed that---for CdS(2) in random ionomer solutions---the neutralization level and S:Cd ratio are two important factors influencing CdS(2) particle size, while the ionomer concentration and polymer composition are not significant factors. Free-carrier absorption (FCA) and two-photon absorption (TPA) are responsible for the optical limiting performance towards ns and ps pulses respectively. The derived free-carrier absorption cross section of nanoparticle solutions is about 10-18˜10-19 cm 2. The lowest limiting threshold is 0.4 J/cm2. Two-photon absorption coefficients were determined to be tens or a few hundreds cm/GW, which is significantly greater than the reported value for corresponding bulk materials. The determined nonlinear refractive indices are on the order of 10-8 esu, at least 1˜2 orders larger than that of bulk materials. These enhancements are attributed to the quantum confinement which results in different mechanisms of nonlinearity for semiconductor nanoparticles compared to bulk materials. Particles with larger size

  5. Measuring the feedback parameter of a semiconductor laser with external optical feedback.

    PubMed

    Yu, Yanguang; Xi, Jiangtao; Chicharo, Joe F

    2011-05-01

    Feedback parameter (the C factor) is an important parameter for a semiconductor laser operating in the regime of external optical feedback. Self-mixing interferometry (SMI) has been proposed for the measurement of the parameter, based on the time-domain analysis of the output power waveforms (called SMI signals) in presence of feedback. However, the existing approaches only work for a limited range of C, below about 3.5. This paper presents a new method to measure C based on analysis of the phase signal of SMI signals in the frequency domain. The proposed method covers a large range of C values, up to about 10. Simulations and experimental results are presented for verification of the proposed method.

  6. Significant intensity noise suppression of single-frequency fiber laser via cascading semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Feng, Zhouming; Li, Can; Xu, Shanhui; Huang, Xiang; Yang, Changsheng; Zhou, Kaijun; Gan, Jiulin; Deng, Huaqiu; Yang, Zhongmin

    2015-09-01

    Significant suppression of the intensity noise of single-frequency fiber laser is demonstrated with a cascading semiconductor optical amplifier (SOA). Based on the nonlinear amplification dynamics of the SOA, intensity noise reduction would take place in every transmission of the laser signal. By cascading two SOAs, a maximum noise suppression of 30 dB at around the resonant relaxation oscillation (RRO) frequency as well as a suppression bandwidth of up to 50 MHz is realized. Moreover, the RRO peak is restricted to a significant narrow frequency band, outside of which the laser noise approaches the noise floor of the measurement. The remarkable amplified spontaneous emission (ASE) introduced by the SOA is entirely filtered out with a fiber Bragg grating (FBG). Furthermore, no noticeable degradation of laser frequency noise has been observed.

  7. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

    SciTech Connect

    Andreeva, E V; Il'chenko, S N; Lobintsov, A A; Shramenko, M V; Ladugin, M A; Marmalyuk, A A; Yakubovich, S D

    2013-11-30

    A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

  8. Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles.

    PubMed

    Ichimura, Taro; Jin, Takashi; Fujita, Hideaki; Higuchi, Hideo; Watanabe, Tomonobu M

    2014-01-01

    Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometer scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies. PMID:25120488

  9. Modeling of Millimeter-Wave Modulation Characteristics of Semiconductor Lasers under Strong Optical Feedback

    PubMed Central

    Bakry, Ahmed

    2014-01-01

    This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated. PMID:25383381

  10. Near-infrared optical parametric oscillator in a III-V semiconductor waveguide

    NASA Astrophysics Data System (ADS)

    Savanier, M.; Ozanam, C.; Lanco, L.; Lafosse, X.; Andronico, A.; Favero, I.; Ducci, S.; Leo, G.

    2013-12-01

    We demonstrate a near-infrared integrated optical parametric oscillator (OPO) in a direct gap semiconductor. Based on a selectively oxidized GaAs/AlGaAs waveguide and monolithic SiO2/TiO2 dichroic Bragg mirrors, this device combines a strong non-resonant quadratic nonlinearity and form-birefringent type-I phase matching. With a TM00 pump around 1 μm and TE00 signal and idler around 2 μm in a single-pass-pump doubly resonant scheme, we observe an oscillation threshold of 210 mW at degeneracy in the continuous-wave regime. This result represents a significant milestone in the perspective of an electrically injected OPO on chip.

  11. Solid-state semiconductor optical cryocooler based on CdS nanobelts.

    PubMed

    Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

    2014-08-13

    We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

  12. Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles.

    PubMed

    Ichimura, Taro; Jin, Takashi; Fujita, Hideaki; Higuchi, Hideo; Watanabe, Tomonobu M

    2014-01-01

    Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometer scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies.

  13. Spin dynamics of an individual Cr atom in a semiconductor quantum dot under optical excitation

    NASA Astrophysics Data System (ADS)

    Lafuente-Sampietro, A.; Utsumi, H.; Boukari, H.; Kuroda, S.; Besombes, L.

    2016-08-01

    We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels population in Cr-doped quantum dots shows that the observed spin dynamics is dominated by the exciton-Cr interaction. These measurements also provide a lower bound in the 20 ns range for the intrinsic Cr spin relaxation time.

  14. Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles

    PubMed Central

    Ichimura, Taro; Jin, Takashi; Fujita, Hideaki; Higuchi, Hideo; Watanabe, Tomonobu M.

    2014-01-01

    Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometer scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies. PMID:25120488

  15. Tapered semiconductor amplifiers for optical frequency combs in the near infrared.

    PubMed

    Cruz, Flavio C; Stowe, Matthew C; Ye, Jun

    2006-05-01

    A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780 nm from a mode-locked Ti:sapphire laser. Energy gains of more than 17 dB(12 dB) are obtained for 1 mW(20 mW) of average input power when the input pulses are stretched into the picosecond range. A spectral window of supercontinuum light generated in a photonic fiber has also been amplified. Interferometric measurements show sub-Hertz linewidths for a heterodyne beat between the input and amplified comb components, yielding no detectable phase-noise degradation under amplification. These amplifiers can be used to boost the infrared power in f-to-2f interferometers used to determine the carrier-to-envelope offset frequency, with clear advantages for stabilization of octave-spanning femtosecond lasers and other supercontinuum light sources. PMID:16642104

  16. Gain recovery dynamics in semiconductor optical amplifiers with distributed feedback grating under assist light injection

    NASA Astrophysics Data System (ADS)

    Qin, Cui; Zhao, Jing; Yu, Huilong; Zhang, Jian

    2016-07-01

    The gain recovery dynamic characteristics of the semiconductor optical amplifier (SOA) with distributed feedback (DFB) grating are theoretically investigated. The interaction of the grating structure and the assist light is used to accelerate the gain recovery process in the SOA. The effects of the assist light that is injected into the SOA with DFB structure on the gain recovery dynamics, the steady-state carrier density, and field intensity distributions are analyzed, respectively. Results show that the recovery time in the DFB SOA is successfully reduced by injecting relatively high power assist light, whose wavelength is set at the gain region. Finally, under assist light injection, the effects of DFB grating on the gain recovery process are also discussed. It is shown that the gain recovery in the SOA with DFB grating is faster than that in the SOA without DFB grating. In addition, the coupling factor in the DFB grating structure can be optimized to shorten the gain recovery time.

  17. Dynamics of a passively mode-locked semiconductor laser subject to dual-cavity optical feedback

    NASA Astrophysics Data System (ADS)

    Jaurigue, Lina; Nikiforov, Oleg; Schöll, Eckehard; Breuer, Stefan; Lüdge, Kathy

    2016-02-01

    We study the influence of dual-cavity optical feedback on the emission dynamics and timing stability of a passively mode-locked semiconductor laser using a delay differential equation model and verify the timing stability results by an initial experiment. By bifurcation analysis in dependence of the feedback delay times and feedback strength bistability, quasiperiodic and chaotic dynamics, as well as fundamental mode-locking are investigated, yielding a comprehensive overview on the nonlinear emission dynamics arising due to dual-cavity optical feedback. Optimum self-locking ranges for improving the timing stability by dual-cavity optical feedback are identified. A timing jitter reduction and an increase of the repetition rate tuning range of up to a factor of three, compared with single-cavity feedback, are predicted for the parameter ranges investigated. Improved timing stability on short and long timescales is predicted for dual-cavity feedback through the suppression of noise-induced fluctuations. Based on the numerical predictions, experimentally, a maximum timing jitter reduction up to a factor of 180 is found, accompanied by a side-band reduction by a factor of 58 dB, when both feedback cavities are resonant.

  18. Enhanced Optical Properties of Germanate and Tellurite Glasses Containing Metal or Semiconductor Nanoparticles

    PubMed Central

    de Araujo, Cid Bartolomeu; Silvério da Silva, Diego; Alves de Assumpção, Thiago Alexandre; Kassab, Luciana Reyes Pires; Mariano da Silva, Davinson

    2013-01-01

    Germanium- and tellurium-based glasses have been largely studied due to their recognized potential for photonics. In this paper, we review our recent studies that include the investigation of the Stokes and anti-Stokes photoluminescence (PL) in different glass systems containing metallic and semiconductor nanoparticles (NPs). In the case of the samples with metallic NPs, the enhanced PL was attributed to the increased local field on the rare-earth ions located in the proximity of the NPs and/or the energy transfer from the metallic NPs to the rare-earth ions. For the glasses containing silicon NPs, the PL enhancement was mainly due to the energy transfer from the NPs to the Er3+ ions. The nonlinear (NL) optical properties of PbO-GeO2 films containing gold NPs were also investigated. The experiments in the pico- and subpicosecond regimes revealed enhanced values of the NL refractive indices and large NL absorption coefficients in comparison with the films without gold NPs. The reported experiments demonstrate that germanate and tellurite glasses, having appropriate rare-earth ions doping and NPs concentration, are strong candidates for PL-based devices, all-optical switches, and optical limiting. PMID:23710138

  19. Optical characterization of semiconductor microresonaters with self-assembled quantum dots

    NASA Astrophysics Data System (ADS)

    Chu, Yaya

    Micro cavities (MCs) with a small effective volume (V eff ) and a high quality factor (Q) are promising for applications in nonlinear optics, sensing, low-threshold lasers, single photon sources, quantum information processing and cavity quantum electrodynamics (CQED) for individual quantum dots (QDs) in the low temperature emission spectra. Near-field mapping of the emission spectra from embedded self-assembled QD provides a better means to understand and control those applications. This thesis is largely focused on the development of a variety of optically-pumped micro-cavities, including photonic crystals (PCs), microdisks (MDs), and microrings (MRs), utilizing an asymmetric waveguide structure of InAs/AlGaAs or InP/GaInP with ultra-small Veff and high-Q. Good isolation of the waveguide layer from substrate by using a wafer bonding technique with a spin-on-glass or wet oxidation of AlGaAs to produce a stable structure for subsequent device development has been achieved. Both far-field and near-field luminescence have been carried out as a function of temperature, along with near-field imaging and finite-difference-time-domain (FDTD) calculations to study the PC defect and Whispering Gallery Modes (WGMs) inside of the MCs. Optically-pumped lasing of microdisk structures has been investigated in both semiconductor systems. Ultra-low lasing thresholds for InP MD and MR lasers at both room temperature and low temperature are demonstrated for the first time.

  20. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback

    PubMed Central

    2016-01-01

    Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs) of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs) has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation. PMID:26901346

  1. Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission

    NASA Astrophysics Data System (ADS)

    Ruterana, Pierre; Chauvat, Marie-Pierre; Lorenz, Katharina

    2015-04-01

    In order to understand the behavior of nitride semiconductors when submitted to ion implantation, we have used 300 keV europium at fluences from 1012 to above 1017 ions cm-2. Subsequently, Rutherford backscattering (RBS), x-ray diffraction (XRD), and transmission electron microscopy (TEM) were used to investigate the evolution of damage. The optical properties were investigated prior to and after annealing. It was found that the behavior of the three compounds (AlN, GaN InN) under ion implantation is rather different: whereas InN breaks down at very low fluences (˜1012 ions cm-2), the damage formation mechanisms are similar in AlN and GaN. In both compounds, extended defects such as stacking faults play a critical role. However, they exhibit different stability, as a consequence, GaN transforms to nanocrystalline state from the surface at a fluence of around 2.5 × 1015 ions cm-2, whereas AlN undergoes a chemical amorphization starting at the projected range (Rp), when implanted to extremely high Eu fluences >1017 ionscm-2. As for the optical activation, the formation of highly stable extended defects in these compounds constitutes a real challenge for the annealing of heavily doped layers, and it was noticed that for a substantial optical activation, the implantation fluences should be kept low (<1015 Eu at cm-2).

  2. Wide bandwidth chaotic signal generation in a monolithically integrated semiconductor laser via optical injection

    NASA Astrophysics Data System (ADS)

    Yin, Xue-Mei; Zhong, Zhu-Qiang; Zhao, Ling-Juan; Lu, Dan; Qiu, Hai-Ying; Xia, Guang-Qiong; Wu, Zheng-Mao

    2015-11-01

    Wide bandwidth chaotic signal generation in a three-section monolithically integrated semiconductor laser (MISL) under external optical injection is investigated experimentally. Through evaluating the effective bandwidth of chaotic signals, the influences of the optical injection on the bandwidth of chaotic signal from the MISL are analyzed. The experimental results indicate that, for the currents of the DFB section (IDFB) and the phase section (IP) are fixed at 70.00 mA and 34.00 mA, respectively, the effective bandwidth of chaos signal generated by the solitary MISL reaches its maximum value of 14.36 GHz when the current of the amplification section (IA) takes 23.22 mA. After an external optical injection is introduced into the MISL, the effective bandwidth of the generated chaotic signal can be beyond 2.5 times of the maximum value. Furthermore, the effects of the injection strength and the frequency detuning on the effective bandwidth of the generated chaotic signal are also discussed.

  3. Wideband model of a reflective tensile-strained bulk semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Connelly, M. J.

    2014-05-01

    Reflective semiconductor optical amplifiers (RSOAs) have shown promise for applications in WDM optical networks and in fiber ring mode-locked lasers. Polarization insensitive SOAs can be fabricated using tensile-strained bulk material and a rectangular cross section waveguide. The introduction of tensile strain can be used to compensate for the different confinement factors experienced by the waveguide TE and TM modes. There is a need for models that can be used to predict RSOA static characteristics such as the dependency of the signal gain on bias current and input optical power, the amplified spontaneous emission spectrum and noise figure. In this paper we extend our prior work on non-reflective SOAs to develop a static model that includes facet reflections. The model uses a detailed band structure description, which is used to determine the wavelength and carrier density dependency of the material gain and additive spontaneous emission. The model and includes a full geometrical description of the amplifier waveguide, including the input taper and the position dependency of the TE/TM confinement factors. The amplified signal and spontaneous emission are described by detailed travelling-wave equations and numerically solved in conjunction with a carrier density rate equation. The model uses material and geometric parameters for a commercially available RSOA. The versatility of the model is shown by several simulations that are used to predict the SOA operational characteristics as well as internal variables such as the amplified spontaneous emission and signal and the carrier density.

  4. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    DOE PAGES

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends onmore » several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.« less

  5. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    NASA Astrophysics Data System (ADS)

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  6. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    SciTech Connect

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  7. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    PubMed Central

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-01-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades. PMID:26670948

  8. Ultra-Low Threshold Optical Bistability and Multi-Stability in Dielecrtric Slab Doped with Semiconductor Quantum Well

    NASA Astrophysics Data System (ADS)

    Nasehi, R.

    2016-07-01

    A scheme for switching of the optical bistability (OB) and multi-stability (OM) in a dielectric slab doped with a three-level ladder-configuration n-doped semiconductor quantum well is simulated. It is shown that the bistable behavior of the system in dielectric slab can be controlled via amplitude or relative phase of applied fields. This optical system may provide some new possibilities for test the switching process.

  9. Asymmetric MQW semiconductor optical amplifier with low-polarization sensitivity of over 90-nm bandwidth

    NASA Astrophysics Data System (ADS)

    Nkanta, Julie E.; Maldonado-Basilio, Ramón; Abdul-Majid, Sawsan; Zhang, Jessica; Hall, Trevor J.

    2013-12-01

    An exhausted capacity of current Passive Optical Networks has been anticipated as bandwidth-hungry applications such as HDTV and 3D video become available to end-users. To enhance their performance, the next generation optical access networks have been proposed, using optical carriers allocated within the E-band (1360-1460 nm). It is partly motivated by the low-water peak fiber being manufactured by Corning. At these wavelengths, choices for low cost optical amplifiers, with compact size, low energy consumption and feasibility for integration with other optoelectronic components are limited, making the semiconductor optical amplifiers (SOA) a realistic solution. An experimental characterization of a broadband and low polarization sensitive asymmetric multi quantum well (MQW) SOA operating in the E-band is reported. The SOA device is composed of nine 6 nm In1-xGaxAsyP1-y 0.2% tensile strained asymmetric MQW layers sandwiched between nine latticed matched 6 nm InGaAsP barrier layers. The active region is grown on an n-doped InP substrate and buried by p-doped InGaAsP layers. The SOA devices have 7-degrees tilt anti-reflected coated facets, with 2 μm ridge width, and a cavity length of 900 μm. For input powers of -10 dBm and -20 dBm, a maximum gain of 20 dB at 1360 nm with a polarization insensitivity under 3 dB for over 90 nm bandwidth is measured. Polarization sensitivity of less than 0.5 dB is observed for some wavelengths. Obtained results indicate a promising SOA with broadband amplification, polarization insensitivity and high gain. These SOAs were designed and characterized at the Photonics Technology Laboratory, University of Ottawa, Canada.

  10. High-power optically pumped semiconductor lasers for near infrared wavelengths

    NASA Astrophysics Data System (ADS)

    Wang, Tsuei-Lian

    Optically pumped semiconductor lasers (OPSLs) combine features including an engineerable emission wavelength, good beam quality, and scalable output power and are desirable for a wide variety of applications. Power scaling of OPSLs requires a combination of accurate epitaxial quantum design, accurate wafer growth and good thermal management. Here a fabrication process for OPSL devices was developed to ensure efficient OPSL device cooling and minimum surface scattering. A systematic thermal analysis was performed to optimize thermal management. Strategies for optimizing power extraction were developed; including increasing the gain/micro-cavity detuning that increases the threshold but also increases the slope efficiency and the roll-over temperature, recycling the excess pump via reflection from a metalized reflector at the back of a transparent DBR, anti-reflection coating at the pump wavelength while preserving the signal micro-cavity resonance. With optimized thermal management and the strategy of using large gain/micro-cavity detuning structure, a CW output power of 103 W from a single OPSL device was achieved. 42% optical-to-optical efficiency from the net pump power was obtained from the OPSL device with the double pass pump design and 39% optical-to-optical efficiency with respect to the total pump power was obtained with the new pump anti-reflection coating. For the fundamental mode operation, over 27 W of CW output power was achieved. To our knowledge, this is the highest 1 microm TEM00 mode power reported to date for an OPSL. Finally, strategies for generating high peak power are also discussed. A maximum peak power of over 270 W was achieved using 750 ns pump pulses.

  11. Magneto-optical studies of magnetic and non-magnetic narrow-gap semiconductors

    NASA Astrophysics Data System (ADS)

    Khodaparast, Giti

    2005-03-01

    In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. Narrow gap semiconductors (NGS) offer many unique features such as small effective masses, high intrinsic mobilities, large effective g- factors, and large spin-orbit coupling effects. This talk will discuss our recent magneto-optical studies on InSb quantum wells (QWs) and InMnAs ferromagnetic heterostructures. In InSb QWs, we observe spin-resolved cyclotron resonance (CR) caused by the non- parabolicity in conduction band and electron spin resonance in symmetric and asymmetric confinement potentials. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with far more spin splitting than expected from the bulk g-factor of InSb. In InMnAs/GaSb we observe light and heavy hole CR peaks which demonstrate the existence of delocalized p-like carriers. In addition, In order to increase our understanding of the dynamics of carriers and spins, we performed time resolved measurements such as time- resolved CR spectroscopy on undoped InSb QWs and time-resolved magneto-optical Kerr effect on InMnAs/GaSb. Our results are important for understanding the electronic and magnetic states in NGS. This work was performed in collaboration with M. B. Santos and R. E. Doezema at the Univ. of Oklahoma, J. Wang and J. Kono at Rice Univ., H. Munekata at Tokyo Institute of Technology, C. J. Stanton at the Univ. of Florida, and Y. H. Matsuda and N. Miura at the Univ. of Tokyo.

  12. Experimental demonstration of optical phase conjugation using counter-propagating dual pumped four-wave mixing in semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Anchal, Abhishek; Pradeep Kumar, K.; O'Duill, Sean; Anandarajah, Prince M.; Landais, Pascal

    2016-06-01

    We report optical phase conjugation in C-band by counter-propagating dual pumped non-degenerate four-wave mixing in a semiconductor optical amplifier (SOA). The co-propagating signal and pump waves create a grating inside SOA which diffracts counter-propagating pump and generates the conjugate wave. Since the signal and conjugate waves appear at opposite ends, the conjugate is easily filtered out from the rest of spectrum with minimal spectral shift of the conjugate with respect to the incoming signal. With pump powers of -3.2 dBm each and signal input power of -7 dBm, conjugate power was of -27.2 dBm, giving a conversion efficiency of 1% at 18 GHz pump-signal detuning. By modulating the signal by a periodic pattern '1000' at 10 Gbps using a non-zero chirp intensity modulator and resolving the temporal profile of the electric field envelope of the conjugate wave, we demonstrate spectral inversion.

  13. Gain and noise properties of InAs/InP quantum dash semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Bilenca, A.; Hadass, D.; Alizon, R.; Dery, H.; Mikhelashvili, V.; Eisenstein, G.; Somers, A.; Kaiser, W.; Deubert, S.; Reithmaier, J. P.; Forchel, A.; Calligaro, M.; Bansropun, S.; Krakowski, M.

    2005-10-01

    Semiconductor optical amplifiers (SOAs) based on nanostructure gain media such as quantum dots (QD) and quantum dashes (QDASH) have several basic characteristics which offer significant performance improvements over commonly used quantum well (QW) or bulk amplifiers. Among these are broadband optical gain bandwidth (which is two to three times broader than that of QW/bulk gain media), fast gain dynamics, large saturation powers, and low α parameter and population inversion factor. Originally, these properties have been demonstrated for QD/QDASH SOAs operating at 1000 nm and 1300 nm. However, it is imperative that QD/QDASH SOAs operating at 1550 nm be materialized in order for them to have the expected impact on fiber-optic communication. Operation at 1550 nm has been achieved using InAs / InP QD and QDASH laser structures. In this paper the unique gain and noise properties of InAs / InP QDASH SOAs operating at 1550 nm will be presented. Specifically, cross-gain-modulation, four-wave-mixing and chirp measurements which explore the complex spectral cross relaxation dynamics of these SOAs will be described and highlighted in the context of simultaneous, distortionless, high bit-rate multiwavelength data amplification, as well as wideband / high-speed optical signal processing applications. Also, an experimental study of the gain and noise in saturated QDASH SOAs will be described together with a theoretical analysis comprising both coherent and incoherent gain phenomena. The impact of the partially inhomogeneously broadened gain spectrum, fast population pulsation dynamics, α parameter and wetting layer density of states on the noise characteristics will be discussed.

  14. Free-carrier effects on electronic and optical properties of binary oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Schleife, Andre; Roedl, Claudia

    2014-03-01

    While there is persistent interest in oxides, e.g., for semiconductor technology or optoelectronics, it remains difficult to achieve n-type and p-type doping of one and the same material. At the same time, higher and higher conductivities are reported for both types of doping individually. Hence, it is important to understand the corresponding influence of free carriers on electronic structure and optical properties. Modern electronic-structure calculations, based on hybrid exchange-correlation functionals and the GW approximation, were performed for n-type (ZnO, CdO, SnO2) and p-type (MnO, NiO) binary oxides. We use these results to analyze the influence of free carriers by computing contributions that increase (Burstein-Moss shift) or reduce (electron-electron interaction and ionized-impurity scattering) the band gaps as a function of free-carrier concentration. We also compute the carrier-concentration dependence of effective electron and hole masses and compare to experimental data. For n-type ZnO we compute optical absorption spectra by means of a recent extension of the Bethe-Salpeter framework. This allows us to take excitonic effects as well as the influence of free carriers on the electron-hole interaction into account. Prepared by LLNL under Contract DE-AC52-07NA27344.

  15. Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser

    NASA Astrophysics Data System (ADS)

    Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.

    2015-03-01

    The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

  16. Modeling of optically controlled reflective bistability in a vertical cavity semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Mishra, L.

    2015-05-01

    Bistability switching between two optical signals has been studied theoretically utilizing the concept of cross absorption modulation in a vertical cavity semiconductor saturable absorber (VCSSA). The probe beam is fixed at a wavelength other than the low power cavity resonance wavelength, which exhibits bistable characteristic by controlling the power of a pump beam (λpump≠λprobe). The cavity nonlinear effects that arises simultaneously from the excitonic absorption bleaching, and the carrier induced nonlinear index change has been considered in the model. The high power absorption in the active region introduces thermal effects within the nonlinear cavity due to which the effective cavity length changes. This leads to a red-shift of the cavity resonance wavelength, which results a change in phase of the optical fields within the cavity. In the simulation, the phase-change due to this resonance shifting is considered to be constant over time, and it assumes the value corresponding to the maximum input power. Further, an initial phase detuning of the probe beam has been considered to investigate its effect on switching. It is observed from the simulated results that, the output of the probe beam exhibits either clockwise or counter-clockwise bistability, depending on its initial phase detuning.

  17. The next generation in optical transport semiconductors: IC solutions at the system level

    NASA Astrophysics Data System (ADS)

    Gomatam, Badri N.

    2005-02-01

    In this tutorial overview, we survey some of the challenging problems facing Optical Transport and their solutions using new semiconductor-based technologies. Advances in 0.13um CMOS, SiGe/HBT and InP/HBT IC process technologies and mixed-signal design strategies are the fundamental breakthroughs that have made these solutions possible. In combination with innovative packaging and transponder/transceiver architectures IC approaches have clearly demonstrated enhanced optical link budgets with simultaneously lower (perhaps the lowest to date) cost and manufacturability tradeoffs. This paper will describe: *Electronic Dispersion Compensation broadly viewed as the overcoming of dispersion based limits to OC-192 links and extending link budgets, *Error Control/Coding also known as Forward Error Correction (FEC), *Adaptive Receivers for signal quality monitoring for real-time estimation of Q/OSNR, eye-pattern, signal BER and related temporal statistics (such as jitter). We will discuss the theoretical underpinnings of these receiver and transmitter architectures, provide examples of system performance and conclude with general market trends. These Physical layer IC solutions represent a fundamental new toolbox of options for equipment designers in addressing systems level problems. With unmatched cost and yield/performance tradeoffs, it is expected that IC approaches will provide significant flexibility in turn, for carriers and service providers who must ultimately manage the network and assure acceptable quality of service under stringent cost constraints.

  18. Phonon coupling in optical transitions for singlet-triplet pairs of bound excitons in semiconductors

    NASA Astrophysics Data System (ADS)

    Pistol, M. E.; Monemar, B.

    1986-05-01

    A model is presented for the observed strong difference in selection rules for coupling of phonons in the one-phonon sideband of optical spectra related to bound excitons in semiconductors. The present treatment is specialized to the case of a closely spaced pair of singlet-triplet character as the lowest electronic states, as is common for bound excitons associated with neutral complexes in materials like GaP and Si. The optical transition for the singlet bound-exciton state is found to couple strongly only to symmetric A1 modes. The triplet state has a similar coupling strength to A1 modes, but in addition strong contributions are found for replicas corresponding to high-density-of-states phonons TAX, LAX, and TOX. This can be explained by a treatment of particle-phonon coupling beyond the ordinary adiabatic approximation. A weak mixing between the singlet and triplet states is mediated by the phonon coupling, as described in first-order perturbation theory. The model derived in this work, for such phonon-induced mixing of closely spaced electronic states, is shown to explain the observed phonon coupling for several bound-exciton systems of singlet-triplet character in GaP. In addition, the observed oscillator strength of the forbidden triplet state may be explained as partly derived from phonon-induced mixing with the singlet state, which has a much larger oscillator strength.

  19. Semiconductor optical amplifiers and Raman amplification for 1310-nm dense wavelength division multiplexed transmission

    NASA Astrophysics Data System (ADS)

    Mazurek, Paweł; Czyżak, Paweł; de Waardt, Huug; Turkiewicz, Jarosław Piotr

    2015-11-01

    We investigate the utilization of semiconductor optical amplifiers (SOAs) and quantum-dot laser-based Raman amplifiers in high-capacity dense wavelength division multiplexed (DWDM) 1310-nm transmission systems. Performed simulations showed that in a 10×40 Gbit/s system, the utilization of a single Raman amplifier in a back-propagation scheme can extend the maximum error-free (bit error rate <10-9) transmission distance by approximately 25 km in comparison with the same system utilizing only an SOA used as a preamplifier. We successfully applied a Raman amplifier in an 8×2×40 Gbit/s 1310-nm polarization multiplexed (PolMux) DWDM transmission over 25 km. Conducted experiments showed that the utilization of a Raman amplifier in this system leads to 4-dB improvement of the average channel sensitivity in comparison to the same system utilizing SOAs. This sensitivity improvement can be translated into a higher power budget. Moreover, lower input optical power in a system utilizing a Raman amplifier reduces the four-wave mixing interactions. The obtained results prove that Raman amplification can be successfully applied in 1310-nm high-capacity transmission systems, e.g., to extend the reach of 400G and 1T Ethernet systems.

  20. Nonlinear dynamics in semiconductor ring lasers with negative optoelectronic and incoherent optical feedback

    NASA Astrophysics Data System (ADS)

    Kingni, S. T.; Van der Sande, G.; Ermakov, Ilya V.; Danckaert, J.

    2014-05-01

    In this work, we study theoretically the dynamical behavior of two semiconductor ring lasers (SRLs). One is subject to negative optoelectronic feedback and the other laser is subject to incoherent optical feedback. Relying on asymptotic methods, we are able to reduce the original set of five equations used to describe the dynamical behavior of SRLs with negative optoelectronic feedback (SRL-NOEF) or incoherent optical feedback (SRL-IOF) to two equations and one map with time delay valid on time-scales longer than the relaxation oscillations (ROs). The equations of the reduced models turn out to be the same for both systems. As we vary the feedback strength, the devices under consideration in this work display both continuous wave operation and a period-doubling route to chaos. The two counter-propagating intensities of both systems exhibit in-phase chaotic behavior for small delay times comparable to the period of relaxation oscillations. For delay times significantly longer than the period of ROs, the two counter-propagating modes show in anti-phase chaotic oscillations. Moreover, for long delay times, we find that the counter-propagating intensities of both systems depict the same dynamical behaviors when their feedback strengths are increased.

  1. Gain compression effect on the modulation dynamics of an optically injection-locked semiconductor laser using gain lever

    NASA Astrophysics Data System (ADS)

    Sarraute, J.-M.; Schires, K.; LaRochelle, S.; Grillot, F.

    2016-03-01

    The modulation response of an optically-injected gain lever semiconductor laser is studied and calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultra large bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. The impact of the gain compression on the modulation dynamic is discussed for the first time. This work is of prime importance for the development of directly-modulated broadband optical sources for high-speed operation at 40 Gbps and beyond.

  2. Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality.

    PubMed

    Mesaritakis, Charis; Kapsalis, Alexandros; Simos, Hercules; Simos, Christos; Krakowski, Michel; Krestnikov, Igor; Syvridis, Dimitris

    2013-07-15

    In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier's geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M² of the emitted beam. PMID:23939062

  3. Ultrafast exciton dynamics and light-driven H2 evolution in colloidal semiconductor nanorods and Pt-tipped nanorods.

    PubMed

    Wu, Kaifeng; Zhu, Haiming; Lian, Tianquan

    2015-03-17

    Colloidal quantum confined one-dimensional (1D) semiconductor nanorods (NRs) and related semiconductor-metal heterostructures are promising new materials for efficient solar-to-fuel conversion because of their unique physical and chemical properties. NRs can simultaneously exhibit quantum confinement effects in the radial direction and bulk like carrier transport in the axial direction. The former implies that concepts well-established in zero-dimensional quantum dots, such as size-tunable energetics and wave function engineering through band alignment in heterostructures, can also be applied to NRs; while the latter endows NRs with fast carrier transport to achieve long distance charge separation. Selective growth of catalytic metallic nanoparticles, such as Pt, at the tips of NRs provides convenient routes to multicomponent heterostructures with photocatalytic capabilities and controllable charge separation distances. The design and optimization of such materials for efficient solar-to-fuel conversion require the understanding of exciton and charge carrier dynamics. In this Account, we summarize our recent studies of ultrafast charge separation and recombination kinetics and their effects on steady-state photocatalytic efficiencies of colloidal CdS and CdSe/CdS NRs and related NR-Pt heterostructures. After a brief introduction of their electronic structure, we discuss exciton dynamics of CdS NRs. By transient absorption and time-resolved photoluminescence decay, it is shown that although the conduction band electrons are long-lived, photogenerated holes in CdS NRs are trapped on an ultrafast time scale (∼0.7 ps), which forms localized excitons due to strong Coulomb interaction in 1D NRs. In quasi-type II CdSe/CdS dot-in-rod NRs, a large valence band offset drives the ultrafast localization of holes to the CdSe core, and the competition between this process and ultrafast hole trapping on a CdS rod leads to three types of exciton species with distinct spatial

  4. Renormalization of optical transition strengths in semiconductor nanoparticles due to band mixing

    DOE PAGES

    Velizhanin, Kirill A.

    2016-05-25

    We report that unique optical properties of semiconductor nanoparticles (SN) make them very promising in the multitude of applications including lasing, light emission and photovoltaics. In many of these applications it is imperative to understand the physics of interaction of electrons in a SN with external electromagnetic fields on the quantitative level. In particular, the strength of electron–photon coupling determines such important SN parameters as the radiative lifetime and absorption cross section. This strength is often assumed to be fully encoded by the so called Kane momentum matrix element. This parameter, however, pertains to a bulk semiconductor material and, asmore » such, is not sensitive to the quantum confinement effects in SNs. In this work we demonstrate that the quantum confinement, via the so called band mixing, can result in a significant suppression of the strength of electron interaction with electromagnetic field. Within the envelope function formalism we show how this suppression can be described by introducing an effective energy-dependent Kane momentum. Then, the effect of band mixing on the efficiencies of various photoinduced processes can be fully captured by the conventional formulae (e.g., spontaneous emission rate), once the conventional Kane momentum is substituted with the renormalized energy-dependent Kane momentum introduced in here. Lastly, as an example, we evaluate the energy-dependent Kane momentum for spherical PbSe and PbS SNs (i.e., quantum dots) and show that neglecting band mixing in these systems can result in the overestimation of absorption cross sections and emission rates by a factor of ~2.« less

  5. Micro-Ball-Lens Optical Switch Driven by SMA Actuator

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok

    2003-01-01

    The figure is a simplified cross section of a microscopic optical switch that was partially developed at the time of reporting the information for this article. In a fully developed version, light would be coupled from an input optical fiber to one of two side-by-side output optical fibers. The optical connection between the input and the selected output fiber would be made via a microscopic ball lens. Switching of the optical connection from one output fiber to another would be effected by using a pair of thin-film shape-memory-alloy (SMA) actuators to toggle the lens between two resting switch positions. There are many optical switches some made of macroscopic parts by conventional fabrication techniques and some that are microfabricated and, hence, belong to the class of microelectromechanical systems (MEMS). Conventionally fabricated optical switches tend to be expensive. MEMS switches can be mass-produced at relatively low cost, but their attractiveness has been diminished by the fact that, heretofore, MEMS switches have usually been found to exhibit high insertion losses. The present switch is intended to serve as a prototype of low-loss MEMS switches. In addition, this is the first reported SMA-based optical switch. The optical fibers would be held in V grooves in a silicon frame. The lens would have a diameter of 1 m; it would be held by, and positioned between, the SMA actuators, which would be made of thin films of TiNi alloy. Although the SMA actuators are depicted here as having simple shapes for the sake of clarity of illustration, the real actuators would have complex, partly net-like shapes. With the exception of the lens and the optical fibers, the SMA actuators and other components of the switch would be made by microfabrication techniques. The components would be assembled into a sandwich structure to complete the fabrication of the switch. To effect switching, an electric current would be passed through one of the SMA actuators to heat it above

  6. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin

    2013-03-01

    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  7. Adaptive Integrated Optical Bragg Grating in Semiconductor Waveguide Suitable for Optical Signal Processing

    NASA Astrophysics Data System (ADS)

    Moniem, T. A.

    2016-05-01

    This article presents a methodology for an integrated Bragg grating using an alloy of GaAs, AlGaAs, and InGaAs with a controllable refractive index to obtain an adaptive Bragg grating suitable for many applications on optical processing and adaptive control systems, such as limitation and filtering. The refractive index of a Bragg grating is controlled by using an external electric field for controlling periodic modulation of the refractive index of the active waveguide region. The designed Bragg grating has refractive indices programmed by using that external electric field. This article presents two approaches for designing the controllable refractive indices active region of a Bragg grating. The first approach is based on the modification of a planar micro-strip structure of the iGaAs traveling wave as the active region, and the second is based on the modification of self-assembled InAs/GaAs quantum dots of an alloy from GaAs and InGaAs with a GaP traveling wave. The overall design and results are discussed through numerical simulation by using the finite-difference time-domain, plane wave expansion, and opto-wave simulation methods to confirm its operation and feasibility.

  8. Microgravity-Driven Optic Nerve/Sheath Biomechanics Simulations

    NASA Technical Reports Server (NTRS)

    Ethier, C. R.; Feola, A.; Myers, J. G.; Nelson, E.; Raykin, J.; Samuels, B.

    2016-01-01

    Visual Impairment and Intracranial Pressure (VIIP) syndrome is a concern for long-duration space flight. Current thinking suggests that the ocular changes observed in VIIP syndrome are related to cephalad fluid shifts resulting in altered fluid pressures [1]. In particular, we hypothesize that increased intracranial pressure (ICP) drives connective tissue remodeling of the posterior eye and optic nerve sheath (ONS). We describe here finite element (FE) modeling designed to understand how altered pressures, particularly altered ICP, affect the tissues of the posterior eye and optic nerve sheath (ONS) in VIIP. METHODS: Additional description of the modeling methodology is provided in the companion IWS abstract by Feola et al. In brief, a geometric model of the posterior eye and optic nerve, including the ONS, was created and the effects of fluid pressures on tissue deformations were simulated. We considered three ICP scenarios: an elevated ICP assumed to occur in chronic microgravity, and ICP in the upright and supine positions on earth. Within each scenario we used Latin hypercube sampling (LHS) to consider a range of ICPs, ONH tissue mechanical properties, intraocular pressures (IOPs) and mean arterial pressures (MAPs). The outcome measures were biomechanical strains in the lamina cribrosa, optic nerve and retina; here we focus on peak values of these strains, since elevated strain alters cell phenotype and induce tissue remodeling. In 3D, the strain field can be decomposed into three orthogonal components, denoted as first, second and third principal strains. RESULTS AND CONCLUSIONS: For baseline material properties, increasing ICP from 0 to 20 mmHg significantly changed strains within the posterior eye and ONS (Fig. 1), indicating that elevated ICP affects ocular tissue biomechanics. Notably, strains in the lamina cribrosa and retina became less extreme as ICP increased; however, within the optic nerve, the occurrence of such extreme strains greatly increased as

  9. Streaked Optical Pyrometer System for Laser-Driven Shock-Wave Experiments on OMEGA

    SciTech Connect

    Miller, J.E.; Boehly, T.R.; Melchior, Meyerhofer, D.D.; Celliers, P.M.; Eggert, J.H.; Hicks, D.G.; Sorce, C.M.; Oertel, J.A.; Emmel, P.M.

    2007-03-23

    The temperature of laser-driven shock waves is of interest to inertial confinement fusion and high-energy-density physics. We report on a streaked optical pyrometer that measures the self-emission of laser-driven shocks simultaneously with a velocity interferometer system for any reflector (VISAR). Together these diagnostics are used to obtain the temporally and spatially resolved temperatures of ~Mbar shocks driven by the OMEGA laser. We provide a brief description of the diagnostic and how it is used with VISAR. Key spectral calibration results are discussed and important characteristics of the recording system are presented.

  10. Streaked optical pyrometer system for laser-driven shock-wave experiments on OMEGA.

    PubMed

    Miller, J E; Boehly, T R; Melchior, A; Meyerhofer, D D; Celliers, P M; Eggert, J H; Hicks, D G; Sorce, C M; Oertel, J A; Emmel, P M

    2007-03-01

    The temperature of laser-driven shock waves is of interest to inertial confinement fusion and high-energy-density physics. We report on a streaked optical pyrometer that measures the self-emission of laser-driven shocks simultaneously with a velocity interferometer system for any reflector (VISAR). Together these diagnostics are used to obtain the temporally and spatially resolved temperatures of approximately megabar shocks driven by the OMEGA laser. We provide a brief description of the diagnostic and how it is used with VISAR. Key spectral calibration results are discussed and important characteristics of the recording system are presented. PMID:17411209

  11. Peak equalization of rational-harmonic-mode-locking fiberized semiconductor laser pulse via optical injection induced gain modulation.

    PubMed

    Kang, Jung-Jui; Lin, Yu-Chan; Lee, Chao-Kuei; Lin, Gong-Ru

    2009-01-19

    Optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated to equalize the peak intensity of pulses generating from the rational-harmonic-mode-locking (RHML) SOA based fiberized semiconductor laser. This is achieved by adjusting the temporal shape of the injected optical signal generated from a Mach-Zehnder intensity modulator, in which the DC biased level exceeding Vpi and the electrical pulse amplitude of 1.5Vpi are concurrently employed. Numerical simulation on the injected optical signal profile and the SOA gain during the inverse-optical-pulse injection induced gain modulation process are also demonstrated. After a peculiar inverse-optical-pulse injection, each pulse in the 5th-order RHML pulse-train experiences different gain from temporally varied SOA gain profile, leading the pulse peak to equalize one another with a minimum standard deviation of 2.5% on the peak intensity variation. The optimized 5th-order RHML pulse exhibits a signal-to-noise suppression ratio of 20 dB and a reduced variation on temporal spacing from 11 to 4 ps. The clock amplitude jitter is compress from 35.3% to 7.3%, which is less than the limitation up to 10% for 5th order RHML generation.

  12. Optical field emission from resonant gold nanorods driven by femtosecond mid-infrared pulses

    SciTech Connect

    Kusa, F.; Echternkamp, K. E.; Herink, G.; Ropers, C.; Ashihara, S.

    2015-07-15

    We demonstrate strong-field photoelectron emission from gold nanorods driven by femtosecond mid-infrared optical pulses. The maximum photoelectron yield is reached at the localized surface plasmon resonance, indicating that the photoemission is governed by the resonantly-enhanced optical near-field. The wavelength- and field-dependent photoemission yield allows for a noninvasive determination of local field enhancements, and we obtain intensity enhancement factors close to 1300, in good agreement with finite-difference time domain computations.

  13. Optically driven oscillations of ellipsoidal particles. Part I: experimental observations.

    PubMed

    Mihiretie, B M; Snabre, P; Loudet, J-C; Pouligny, B

    2014-12-01

    We report experimental observations of the mechanical effects of light on ellipsoidal micrometre-sized dielectric particles, in water as the continuous medium. The particles, made of polystyrene, have shapes varying between near disk-like (aspect ratio k = 0.2) to very elongated needle-like (k = 8). Rather than the very tightly focused beam geometry of optical tweezers, we use a moderately focused laser beam to manipulate particles individually by optical levitation. The geometry allows us varying the longitudinal position of the particle, and to capture images perpendicular to the beam axis. Experiments show that moderate-k particles are radially trapped with their long axis lying parallel to the beam. Conversely, elongated (k > 3) or flattened (k < 0.3) ellipsoids never come to rest, and permanently "dance" around the beam, through coupled translation-rotation motions. The oscillations are shown to occur in general, be the particle in bulk water or close to a solid boundary, and may be periodic or irregular. We provide evidence for two bifurcations between static and oscillating states, at k ≈ 0.33 and k ≈ 3 for oblate and prolate ellipsoids, respectively. Based on a recently developed 2-dimensional ray-optics simulation (Mihiretie et al., EPL 100, 48005 (2012)), we propose a simple model that allows understanding the physical origin of the oscillations. PMID:25577402

  14. Terahertz magneto-optics in the ferromagnetic semiconductor HgCdCr2Se4

    NASA Astrophysics Data System (ADS)

    Huisman, T. J.; Mikhaylovskiy, R. V.; Telegin, A. V.; Sukhorukov, Yu. P.; Granovsky, A. B.; Naumov, S. V.; Rasing, Th.; Kimel, A. V.

    2015-03-01

    The magneto-optical response of the ferromagnetic semiconductor HgCdCr2Se4 at terahertz (THz) frequencies is studied using polarization sensitive THz time-domain spectroscopy. It is shown that the polarization state of broadband terahertz pulses, with a spectrum spanning from 0.2 THz to 2.2 THz, changes as an even function of the magnetization of the medium. Analysing the ellipticity and the rotation of the polarization of the THz radiation, we show that these effects originate from linear birefringence and dichroism, respectively, induced by the magnetic ordering. These effects are rather strong and reach 102 rad/m at an applied field of 1 kG which saturates the magnetization of the sample. Our observation serves as a proof-of-principle showing strong effects of the magnetic order on the response of a medium to electric fields at THz frequencies. These experiments also suggest the feasibility of spin-dependent transport measurements on a sub-picosecond timescale.

  15. Theoretical simulation of carrier capture and relaxation rates in quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Wu, Yunhu; Zhang, Guoping; Guo, Ling; Qi, Guoqun; Li, Xiaoming

    2014-06-14

    Based on Auger scattering mechanism, carrier-carrier scattering dynamics between the two-dimensional carrier reservoir (also called wetting layer, i.e., WL) and the confined quantum dot ground and first excited state in quantum-dot semiconductor optical amplifiers (QD-SOAs) are investigated theoretically in this paper. The scattering rates for independent electron and hole densities are calculated. The results show an ultra-fast carrier capture (relaxation) rate up to 1 ps{sup −1}, and there is a complex dependence of the Coulomb scattering rates on the WL electron and hole densities. In addition, due to the different effective mass and the level distribution, the scattering rates for electron and hole are very different. Finally, in order to provide a direction to control (increase or decrease) the input current in realistic QD-SOA systems, a simple method is proposed to determine the trends of the carrier recovery rates with the WL carrier densities in the vicinity of the steady-state.

  16. Wideband dynamic behavioral modeling of reflective semiconductor optical amplifiers using a tapped-delay multilayer perceptron.

    PubMed

    Liu, Zhansheng; Violas, Manuel Alberto; Carvalho, Nuno Borges

    2013-02-11

    In this paper, we propose a wideband dynamic behavioral model for a bulk reflective semiconductor optical amplifier (RSOA) used as a modulator in colorless radio over fiber (RoF) systems using a tapped-delay multilayer perceptron (TDMLP). 64 quadrature amplitude modulation (QAM) signals with 20 Msymbol/s were used to train, validate and test the model. Nonlinear distortion and dynamic effects induced by the RSOA modulator are demonstrated. The parameters of the model such as the number of nodes in the hidden layer and memory depth were optimized to ensure the generality and accuracy. The normalized mean square error (NMSE) is used as a figure of merit. The NMSE was up to -44.33 dB when the number of nodes in the hidden layer and memory depth were set to 20 and 3, respectively. The TDMLP model can accurately approximate to the dynamic characteristics of the RSOA modulator. The dynamic AM-AM and dynamic AM-PM distortions of the RSOA modulator are drawn. The results show that the single hidden layer TDMLP can provide accurate approximation for behaviors of the RSOA modulator.

  17. Investigation of the uncertainties of the estimated optical constants and thickness of very thin semiconductor layers

    NASA Astrophysics Data System (ADS)

    Gushterova, P.; Hristov, B.; Sharlandjiev, P.

    2010-04-01

    We recently developed an approach to the estimation of the complex permittivity (epsilon) and thickness (d) of very thin layers using measurements of their transmittance, front-side reflectance and back-side reflectance. The approach is based on a limited expansion of the Abelès characteristic matrix elements and is especially designed for characterization of very thin layers. In this paper we investigate the uncertainties of the estimated real part of epsilon (epsilon1), the imaginary part of epsilon (epsilon2) and d of semiconductor thin layers that are due to the methodological error and the experimental uncertainties in the optical quantities measured. It is shown that the effect of the uncertainties in the measurable quantities is significantly stronger than that of the methodical error and increases considerably with the decrease of the ratio d/λ (λ being the wavelength). An efficient two-step procedure is proposed to reduce this effect. First, we supply a criterion for determination of d with the lowest uncertainty from the ensemble of estimations constructed on a wavelength by wavelength basis. This is crucial for the next step: the estimation of epsilon1 and epsilon2. The approach proposed ensures estimation of epsilon1, epsilon2 and d with the highest accuracy, limited only by the methodological error.

  18. Resolved-sideband Raman cooling of an optical phonon in semiconductor materials

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Zhang, Qing; Wang, Xingzhi; Kwek, Leong Chuan; Xiong, Qihua

    2016-09-01

    The radiation pressure of light has been widely used to cool trapped atoms or the mechanical vibrational modes of optomechanical systems. Recently, by using the electrostrictive forces of light, spontaneous Brillouin cooling and stimulated Brillouin excitation of acoustic modes of the whispering-gallery-type resonator have been demonstrated. The laser cooling of specific lattice vibrations in solids (that is, phonons) proposed by Dykman in the late 1970s, however, still remains sparsely investigated. Here, we demonstrate the first strong spontaneous Raman cooling and heating of a longitudinal optical phonon (LOP) with a 6.23 THz frequency in polar semiconductor zinc telluride nanobelts. We use the exciton to resonate and assist photoelastic Raman scattering from the LOPs caused by a strong exciton–LOP coupling. By detuning the laser pump to a lower (higher) energy-resolved sideband to make a spontaneous scattering photon resonate with an exciton at an anti-Stokes (Stokes) frequency, the dipole oscillation of the LOPs is photoelastically attenuated (enhanced) to a colder (hotter) state.

  19. Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

    SciTech Connect

    Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.

    2010-07-15

    Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

  20. Output-Level Control of Semiconductor Optical Amplifier by External Light Injection

    NASA Astrophysics Data System (ADS)

    Morito, Ken

    2005-12-01

    A method of controlling the output level of semiconductor optical amplifiers (SOAs) that accepts a wide range of input power and delivers constant output power was experimentally studied. It is demonstrated that external light injection into SOAs could change the signal gain by varying the depth of gain saturation while retaining their saturation output power. This feature is very important in SOAs when amplifying signals modulated in the gigabit-per-second (Gb/s) range because the average output level of SOAs must be limited to a value several decibels lower than the saturation output power to prevent signal distortions due to the pattern effect. For signals modulated at 10 Gb/s in the nonreturn-to-zero (NRZ) format, the upper limit for allowable signal input power increased by > 13.5 dB, while retaining good eye patterns in a signal-wavelength range between 1530 and 1560 nm. Consequently, output-level control with a constant output power of +10 dBm was demonstrated for a wide input dynamic range of 13.5 dB in the signal-wavelength range. This method of controlling the output level of SOAs is promising for equalizing the signal power in future photonic network systems because the short carrier lifetime of SOAs can provide extremely fast gain control.

  1. Multiphysics modeling of non-linear laser-matter interactions for optically active semiconductors

    NASA Astrophysics Data System (ADS)

    Kraczek, Brent; Kanp, Jaroslaw

    Development of photonic devices for sensors and communications devices has been significantly enhanced by computational modeling. We present a new computational method for modelling laser propagation in optically-active semiconductors within the paraxial wave approximation (PWA). Light propagation is modeled using the Streamline-upwind/Petrov-Galerkin finite element method (FEM). Material response enters through the non-linear polarization, which serves as the right-hand side of the FEM calculation. Maxwell's equations for classical light propagation within the PWA can be written solely in terms of the electric field, producing a wave equation that is a form of the advection-diffusion-reaction equations (ADREs). This allows adaptation of the computational machinery developed for solving ADREs in fluid dynamics to light-propagation modeling. The non-linear polarization is incorporated using a flexible framework to enable the use of multiple methods for carrier-carrier interactions (e.g. relaxation-time-based or Monte Carlo) to enter through the non-linear polarization, as appropriate to the material type. We demonstrate using a simple carrier-carrier model approximating the response of GaN. Supported by ARL Materials Enterprise.

  2. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

    SciTech Connect

    Mario Agio

    2002-12-31

    This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

  3. Multiwavelength diode-laser absorption spectroscopy using external intensity modulation by semiconductor optical amplifiers.

    PubMed

    Karagiannopoulos, Solon; Cheadle, Edward; Wright, Paul; Tsekenis, Stylianos; McCann, Hugh

    2012-12-01

    A novel opto-electronic scheme for line-of-sight Near-IR gas absorption measurement based on direct absorption spectroscopy (DAS) is reported. A diode-laser-based, multiwavelength system is designed for future application in nonintrusive, high temporal resolution tomographic imaging of H2O in internal combustion engines. DAS is implemented with semiconductor optical amplifiers (SOAs) to enable wavelength multiplexing and to induce external intensity modulation for phase-sensitive detection. Two overtone water transitions in the Near-IR have been selected for ratiometric temperature compensation to enable concentration measurements, and an additional wavelength is used to account for nonabsorbing attenuation. A wavelength scanning approach was used to evaluate the new modulation technique, and showed excellent absorption line recovery. Fixed-wavelength, time-division-multiplexing operation with SOAs has also been demonstrated. To the best of our knowledge this is the first time SOAs have been used for modulation and switching in a spectroscopic application. With appropriate diode laser selection this scheme can be also used for other chemical species absorption measurements. PMID:23207374

  4. Multiwavelength diode-laser absorption spectroscopy using external intensity modulation by semiconductor optical amplifiers.

    PubMed

    Karagiannopoulos, Solon; Cheadle, Edward; Wright, Paul; Tsekenis, Stylianos; McCann, Hugh

    2012-12-01

    A novel opto-electronic scheme for line-of-sight Near-IR gas absorption measurement based on direct absorption spectroscopy (DAS) is reported. A diode-laser-based, multiwavelength system is designed for future application in nonintrusive, high temporal resolution tomographic imaging of H2O in internal combustion engines. DAS is implemented with semiconductor optical amplifiers (SOAs) to enable wavelength multiplexing and to induce external intensity modulation for phase-sensitive detection. Two overtone water transitions in the Near-IR have been selected for ratiometric temperature compensation to enable concentration measurements, and an additional wavelength is used to account for nonabsorbing attenuation. A wavelength scanning approach was used to evaluate the new modulation technique, and showed excellent absorption line recovery. Fixed-wavelength, time-division-multiplexing operation with SOAs has also been demonstrated. To the best of our knowledge this is the first time SOAs have been used for modulation and switching in a spectroscopic application. With appropriate diode laser selection this scheme can be also used for other chemical species absorption measurements.

  5. Resolved-sideband Raman cooling of an optical phonon in semiconductor materials

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Zhang, Qing; Wang, Xingzhi; Kwek, Leong Chuan; Xiong, Qihua

    2016-09-01

    The radiation pressure of light has been widely used to cool trapped atoms or the mechanical vibrational modes of optomechanical systems. Recently, by using the electrostrictive forces of light, spontaneous Brillouin cooling and stimulated Brillouin excitation of acoustic modes of the whispering-gallery-type resonator have been demonstrated. The laser cooling of specific lattice vibrations in solids (that is, phonons) proposed by Dykman in the late 1970s, however, still remains sparsely investigated. Here, we demonstrate the first strong spontaneous Raman cooling and heating of a longitudinal optical phonon (LOP) with a 6.23 THz frequency in polar semiconductor zinc telluride nanobelts. We use the exciton to resonate and assist photoelastic Raman scattering from the LOPs caused by a strong exciton-LOP coupling. By detuning the laser pump to a lower (higher) energy-resolved sideband to make a spontaneous scattering photon resonate with an exciton at an anti-Stokes (Stokes) frequency, the dipole oscillation of the LOPs is photoelastically attenuated (enhanced) to a colder (hotter) state.

  6. Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

    NASA Technical Reports Server (NTRS)

    Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

    1996-01-01

    Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

  7. Observation of power gain in an inductive pulsed power system with an optically activated semiconductor closing and opening switch

    NASA Astrophysics Data System (ADS)

    Kung, Chun C.; Funk, Eric E.; Chauchard, Eve A.; Rhee, M. J.; Lee, Chi H.; Yan, Li

    1991-03-01

    Peak power gain greater than 15 was obtained with a current charged transmission line and an optically activated semiconductor opening switch. The optical pulse used for activating the switch is generated by a Nd:glass laser emitting at 1. 054 pm. It has a slow rise-time (''--''2OO uS) and a fast fall-time (s1O uS). In the experiment a 2 kV output voltage pulse was achieved with a 5 mm cube GaAs p-i-n diode sitch at 500 V charging voltage.

  8. Optical studies of spin dynamics and hole transitions in ferromagnetic semiconductor (gallium,manganese)arsenic

    NASA Astrophysics Data System (ADS)

    Wang, Daimian

    The ferromagnetic semiconductor (Ga,Mn)As has been a focus of much research prompted by its potential applications in semiconductor spintronics. In this thesis, studies of the defect configuration and spin dynamics in this material are reported. The technique of resonant Raman scattering was used to study the defect configuration. Insulating nano-islands consisting of substitutional Mn Ga acceptors and interstitial MnI donors were observed in ferromagnetic (Ga,Mn)As from resonant Raman spectra. As indicated by a sharp Raman transition from the 1S3/2-2 S3/2 hole levels at 703 cm-1, holes bound to MnGa acceptors inside the islands are partially isolated from the outside ferromagnetic environment. The MnGa ions inside the islands can interact with the ferromagnetic environment through bound excitons, as suggested by the presence of magnon-related side peaks. The radius of the nano-islands is inferred to be 5-10 nm. The islands disappear after annealing due to the removal of the MnI ions. Furthermore, the technique of pump-probe magneto-optical Kerr spectroscopy was used to study the spin dynamics in (Ga,Mn)As. Coherent oscillations associated with magnetization precessions were observed. Using a comprehensive theoretical description of the processes by which light couples to the magnetization, the anisotropy and spin stiffness constants were gained from the experimental data. Results reveal a relatively large negative contribution to the energy due to surface anisotropy leading to excitations that are a mixture of bulk waves and surface modes. The dependence of the spin wave oscillations on magnetic field direction and temperature is also discussed. Finally, the pump-probe technique was used to study interlayer coupling in (Ga,Mn)As-based superlattices. A coupled spin precession mode was observed in two layers of (Ga,Mn)As seperated by two-monolayers of AlAs. The spin wave spectra on superlattices with GaAs as spacer layers imply that Mn ions diffuse from (Ga,Mn)As to

  9. All-optical 1st- and 2nd-order differential equation solvers with large tuning ranges using Fabry-Pérot semiconductor optical amplifiers.

    PubMed

    Chen, Kaisheng; Hou, Jie; Huang, Zhuyang; Cao, Tong; Zhang, Jihua; Yu, Yuan; Zhang, Xinliang

    2015-02-01

    We experimentally demonstrate an all-optical temporal computation scheme for solving 1st- and 2nd-order linear ordinary differential equations (ODEs) with tunable constant coefficients by using Fabry-Pérot semiconductor optical amplifiers (FP-SOAs). By changing the injection currents of FP-SOAs, the constant coefficients of the differential equations are practically tuned. A quite large constant coefficient tunable range from 0.0026/ps to 0.085/ps is achieved for the 1st-order differential equation. Moreover, the constant coefficient p of the 2nd-order ODE solver can be continuously tuned from 0.0216/ps to 0.158/ps, correspondingly with the constant coefficient q varying from 0.0000494/ps(2) to 0.006205/ps(2). Additionally, a theoretical model that combining the carrier density rate equation of the semiconductor optical amplifier (SOA) with the transfer function of the Fabry-Pérot (FP) cavity is exploited to analyze the solving processes. For both 1st- and 2nd-order solvers, excellent agreements between the numerical simulations and the experimental results are obtained. The FP-SOAs based all-optical differential-equation solvers can be easily integrated with other optical components based on InP/InGaAsP materials, such as laser, modulator, photodetector and waveguide, which can motivate the realization of the complicated optical computing on a single integrated chip.

  10. Influence of Multi-Cascaded Semiconductor Optical Amplifiers on the Signal in an Energy-Efficient System

    NASA Astrophysics Data System (ADS)

    Chen, Xiao-Yong; Sheng, Xin-Zhi; Wu, Chong-Qing

    2012-01-01

    Signal impairment is experimentally studied by using the extinction ratio (ER), error bit rate (BER) and optical spectrum in a three-cascaded semiconductor optical amplifier (SOA) setup. The signal with the ER of 13 dB and BER of < 10-9 is achieved after the signal passing through the cascaded SOAs. With the results obtained from the experiment, we confirm that the three-cascaded SOAs used to compensate for power in the optical transmission can be accepted. This experimental result also offers the possibility of achieving a higher throughput of multiplane architecture by exploiting three switching domains instead of two switching domains in the energy-efficient design of a scalable optical multi-plane interconnection architecture. The space switches in output ports of multi-plane interconnection architecture can be improved to N = 32 × 32 × 32 = 32768.

  11. Ultra low-loss, isotropic optical negative-index metamaterial based on hybrid metal-semiconductor nanowires

    PubMed Central

    Paniagua-Domínguez, R.; Abujetas, D. R.; Sánchez-Gil, J. A.

    2013-01-01

    Recently, many fascinating properties predicted for metamaterials (negative refraction, superlensing, electromagnetic cloaking,…) were experimentally demonstrated. Unfortunately, the best achievements have no direct translation to the optical domain, without being burdened by technological and conceptual difficulties. Of particular importance within the realm of optical negative-index metamaterials (NIM), is the issue of simultaneously achieving strong electric and magnetic responses and low associated losses. Here, hybrid metal-semiconductor nanowires are proposed as building blocks of optical NIMs. The metamaterial thus obtained, highly isotropic in the plane normal to the nanowires, presents a negative index of refraction in the near-infrared, with values of the real part well below −1, and extremely low losses (an order of magnitude better than present optical NIMs). Tunability of the system allows to select the operating range in the whole telecom spectrum. The design is proven in configurations such as prisms and slabs, directly observing negative refraction. PMID:23514968

  12. Metamaterial-driven lens optics for new beam forming patterns

    NASA Astrophysics Data System (ADS)

    Zaghloul, Amir I.; Weiss, Steven J.

    2011-06-01

    This paper discusses the general concept of using metamaterials in microwave lenses. The different optics afforded by the inclusion of metamaterials in the lens structure produce new features such as reduced size and new beam formations. The use of negative refractive index materials is discussed in reference to the original concept of the perfect lens, leading to the Rotman lens and the Luneburg lens. In Rotman lens, negative refractions help reducing the lens size and a broadband electromagnetic band gap (EBG) surface is used to prevent reflections off the sidewalls. Verification of negative refraction and simulation of isotropic material performance are presented, as well as an example of broadening the band of an EBG surface.

  13. A Modular, IGBT Driven, Ignitron Switched, Optically Controlled Power Supply

    NASA Astrophysics Data System (ADS)

    Carroll, Evan; von der Linden, Jens; You, Setthivoine

    2013-10-01

    An experiment to investigate the dynamics of canonical flux tubes at the University of Washington uses two high energy pulsed power supplies to generate and sustain the plasma discharge. A modular 240 μF , 12 kV DC capacitor based power supply, discharged by ignitron, has been developed specifically for this application. Design considerations include minimizing inductance, rapid switching, fast rise times, and electrically isolated control. An optically coupled front panel and fast IGBT ignitron drive circuit, sequenced manually or by software, control the charge and discharge of the power supply. A complete, sequenced charge/discharge has been successfully tested with a dummy load, producing a peak current of 100 kA and a rise time of 25 μs . This work was sponsored in part by the US DOE Grant DE-SC0010340.

  14. A photo-driven dual-frequency addressable optical device of banana-shaped molecules

    NASA Astrophysics Data System (ADS)

    Krishna Prasad, S.; Lakshmi Madhuri, P.; Hiremath, Uma S.; Yelamaggad, C. V.

    2014-03-01

    We propose a photonic switch employing a blend of host banana-shaped liquid crystalline molecules and guest photoisomerizable calamitic molecules. The material exhibits a change in the sign of the dielectric anisotropy switching from positive to negative, at a certain crossover frequency of the probing field. The consequent change in electric torque can be used to alter the orientation of the molecules between surface-determined and field-driven optical states resulting in a large change in the optical transmission characteristics. Here, we demonstrate the realization of this feature by an unpolarized UV beam, the first of its kind for banana-shaped molecules. The underlying principle of photoisomerization eliminates the need for a second driving frequency. The device also acts as a reversible conductance switch with an order of magnitude increase of conductivity brought about by light. Possible usage of this for optically driven display devices and image storage applications is suggested.

  15. All-optically driven system in ultrasonic wave-based structural health monitoring

    NASA Astrophysics Data System (ADS)

    Bi, Siwen; Wu, Nan; Zhou, Jingcheng; Zhang, Haifeng; Wang, Xingwei

    2016-04-01

    Ultrasonic wave based structural health monitoring (SHM) is an innovative method for nondestructive detection and an area of growing interest. This is due to high demands for wireless detection in the field of structural engineering. Through optically exciting and detecting ultrasonic waves, electrical wire connections can be avoided, and non-contact SHM can be achieved. With the combination of piezoelectric transducer (PZT) (which possesses high heat resistance) and the noncontact detection, this system has a broad range of applications, even in extreme conditions. This paper reports an all-optically driven SHM system. The resonant frequencies of the PZT transducers are sensitive to a variety of structural damages. Experimental results have verified the feasibility of the all-optically driven SHM system.

  16. A photo-driven dual-frequency addressable optical device of banana-shaped molecules

    SciTech Connect

    Krishna Prasad, S. Lakshmi Madhuri, P.; Hiremath, Uma S.; Yelamaggad, C. V.

    2014-03-17

    We propose a photonic switch employing a blend of host banana-shaped liquid crystalline molecules and guest photoisomerizable calamitic molecules. The material exhibits a change in the sign of the dielectric anisotropy switching from positive to negative, at a certain crossover frequency of the probing field. The consequent change in electric torque can be used to alter the orientation of the molecules between surface-determined and field-driven optical states resulting in a large change in the optical transmission characteristics. Here, we demonstrate the realization of this feature by an unpolarized UV beam, the first of its kind for banana-shaped molecules. The underlying principle of photoisomerization eliminates the need for a second driving frequency. The device also acts as a reversible conductance switch with an order of magnitude increase of conductivity brought about by light. Possible usage of this for optically driven display devices and image storage applications is suggested.

  17. Optical-parametric-oscillator solitons driven by the third harmonic

    NASA Astrophysics Data System (ADS)

    Lutsky, Vitaly; Malomed, Boris A.

    2004-12-01

    We introduce a model of a lossy second-harmonic-generating (χ(2)) cavity externally pumped at the third harmonic, which gives rise to driving terms of a new type, corresponding to a cross-parametric gain. The equation for the fundamental-frequency (FF) wave may also contain a quadratic self-driving term, which is generated by the cubic nonlinearity of the medium. Unlike previously studied phase-matched models of χ(2) cavities driven at the second harmonic or at FF, the present one admits an exact analytical solution for the soliton, at a special value of the gain parameter. Two families of solitons are found in a numerical form, and their stability area is identified through numerical computation of the perturbation eigenvalues (stability of the zero solution, which is a necessary condition for the soliton’s stability, is investigated in an analytical form). One family is a continuation of the special analytical solution. At given values of the parameters, one soliton is stable and the other one is not; they swap their stability at a critical value of the mismatch parameter. The stability of the solitons is also verified in direct simulations, which demonstrate that an unstable pulse rearranges itself into a stable one, or into a delocalized state, or decays to zero. A soliton which was given an initial boost C starts to move but quickly comes to a halt, if the boost is smaller than a critical value Ccr . If C>Ccr , the boost destroys the soliton (sometimes, through splitting into two secondary pulses). Interactions between initially separated solitons are investigated, too. It is concluded that stable solitons always merge into a single one. In the system with weak loss, it appears in a vibrating form, slowly relaxing to the static shape. With stronger loss, the final soliton emerges in the stationary form.

  18. Wavelength-dependent femtosecond pulse amplification in wideband tapered-waveguide quantum well semiconductor optical amplifiers.

    PubMed

    Xia, Mingjun; Ghafouri-Shiraz, H

    2015-12-10

    In this paper, we study the wavelength-dependent amplification in three different wideband quantum well semiconductor optical amplifiers (QWAs) having conventional, exponentially tapered, and linearly tapered active region waveguide structures. A new theoretical model for tapered-waveguide QWAs considering the effect of lateral carrier density distribution and the strain effect in the quantum well is established based on a quantum well transmission line modeling method. The temporal and spectral characteristics of amplified femtosecond pulse are analyzed for each structure. It was found that, for the amplification of a single femtosecond pulse, the tapered-waveguide QWA provides higher saturation gain, and the output spectra of the amplified pulse in all three structures exhibit an apparent redshift and bandwidth narrowing due to the reduction of carrier density; however, the output spectrum in the tapered-waveguide amplifier is less distorted and exhibits smaller bandwidth narrowing. For the simultaneous amplification of two femtosecond pulses with different central frequencies, in all the three structures, two peaks appear in the output spectra while the peak at the frequency closer to the peak frequency of the QWA gain spectrum receives higher amplification due to the frequency (wavelength) dependence of the QWA gain. At a low peak power level of the input pulse, the bandwidth of each window in the tapered structure is larger than that of the conventional waveguide structure, which aggravates the spectrum alias in the amplification of femtosecond pulses with different central frequencies. As the peak powers of the two pulses increase, the spectrum alias in the conventional waveguide becomes more serious while there are small changes in the tapered structures. Also, we have found that in the amplification of a femtosecond pulse train, the linear-tapered QWAs exhibit the fastest gain recovery as compared with the conventional and exponentially tapered QWAs.

  19. Wavelength-dependent femtosecond pulse amplification in wideband tapered-waveguide quantum well semiconductor optical amplifiers.

    PubMed

    Xia, Mingjun; Ghafouri-Shiraz, H

    2015-12-10

    In this paper, we study the wavelength-dependent amplification in three different wideband quantum well semiconductor optical amplifiers (QWAs) having conventional, exponentially tapered, and linearly tapered active region waveguide structures. A new theoretical model for tapered-waveguide QWAs considering the effect of lateral carrier density distribution and the strain effect in the quantum well is established based on a quantum well transmission line modeling method. The temporal and spectral characteristics of amplified femtosecond pulse are analyzed for each structure. It was found that, for the amplification of a single femtosecond pulse, the tapered-waveguide QWA provides higher saturation gain, and the output spectra of the amplified pulse in all three structures exhibit an apparent redshift and bandwidth narrowing due to the reduction of carrier density; however, the output spectrum in the tapered-waveguide amplifier is less distorted and exhibits smaller bandwidth narrowing. For the simultaneous amplification of two femtosecond pulses with different central frequencies, in all the three structures, two peaks appear in the output spectra while the peak at the frequency closer to the peak frequency of the QWA gain spectrum receives higher amplification due to the frequency (wavelength) dependence of the QWA gain. At a low peak power level of the input pulse, the bandwidth of each window in the tapered structure is larger than that of the conventional waveguide structure, which aggravates the spectrum alias in the amplification of femtosecond pulses with different central frequencies. As the peak powers of the two pulses increase, the spectrum alias in the conventional waveguide becomes more serious while there are small changes in the tapered structures. Also, we have found that in the amplification of a femtosecond pulse train, the linear-tapered QWAs exhibit the fastest gain recovery as compared with the conventional and exponentially tapered QWAs. PMID

  20. Nonlinear Studies of Semiconductors and Molecular Gases with AN Optically Pumped Laser.

    NASA Astrophysics Data System (ADS)

    Mitchell, Keith William

    Available from UMI in association with The British Library. Requires signed TDF. This work has been concerned with aspects of both the technology and the application of optically pumped FIR lasers. The development of a high power waveguide CO_2 laser for use as a pump source is described, prior to the main body of the thesis on the use of high intensity far-infrared (cw and Q-switched) radiation for nonlinear magneto-optical spectroscopy. The measurement of inter-Landau level lifetimes in GaAs-Ga_{rm x}Al _{rm 1-x}As heterostructures by means of cyclotron resonance absorption saturation is reported. The results are analysed using a three level model, with the lifetimes thus obtained varying from 0.18 ns to 1.2 ns depending on carrier density. It is also demonstrated that in the case of high mobility material the laser pulse length is of crucial importance, with the sample exhibiting bulk characteristics (apparently losing its 2D properties) as the pulse length is shortened. Landau level lifetimes in bulk semiconductors have also been determined, with the results being well interpreted on a three-level model. At higher laser irradiances, cyclotron resonance saturation measurements in uncompensated n-GaAs have demonstrated that an electron-electron scattering mechanism results in an N = 1 Landau level electron lifetime of ~1 ns. The dependence of the cyclotron resonance linewidth (and hence the carrier momentum scattering time) on carrier density is shown to be consistent with ionized impurity scattering. The first observation of saturation of the cyclotron resonance absorption in n-InP is also made, and again this is fitted on a three -level model. The N = 1 Landau level lifetime has thus been determined to be 0.9 ns, in good agreement with the lifetime obtained from emission studies. Finally we report the observation of chaos in the far-infrared output, with all emissions investigated exhibiting the same characteristic signature.

  1. Polarization-insensitive wavelength-division-multiplexing optical millimeter wave generation based on copolarized pump four wave mixing in a semiconductor optical amplifier.

    PubMed

    Li, Ying; Zheng, Zhiwei; Chen, Lin; Wen, Shuangchun; Fan, Dianyuan

    2009-06-01

    We proposed a novel scheme to generate polarization-insensitive optical millimeter-wave (mm-wave) wavelength-division-multiplexing (WDM) signals by using an external modulator and a semiconductor optical amplifier (SOA). In the scheme, two copolarized pumps and a WDM signal are mixed in the SOA based on four wave mixing (FWM), and the quadruple frequency mm-wave signal, similar to the single-sideband mm-wave signal, is obtained by using an optical filter to remove one sideband after FWM. Based on the scheme, we have experimentally demonstrated the generation of a two-channel 2.5 Gbit/s WDM optical mm-wave signal with a repetitive frequency up to 40 GHz by a 10 GHz local oscillator, and the downstream signal delivery over a 20 km fiber with power penalty less than 1 dB.

  2. Maxwell-Bloch Equations Modeling of Ultrashort Optical Pulse Propagation in Semiconductor Materials

    NASA Technical Reports Server (NTRS)

    Goorjian, Peter M.; Agrawal, Govind, P.

    1997-01-01

    An algorithm has been developed that solves the semiconductor Maxwell-Bloch equations, without making the standard slowly-varying envelope (SVEA) and rotating-wave (RWA) approximations. It is applied to study the propagation of ultrashort pulses in semiconductor materials. The results include many-body effects due to the Coulomb interaction among the charge carriers as well as the nonlinear effects resulting from spectral hole-burning.

  3. Microchamber Device Equipped with Complementary Metal Oxide Semiconductor Optical Polarization Analyzer Chip for Micro Total Analysis System

    NASA Astrophysics Data System (ADS)

    Minakawa, Kyosuke; Yamada, Hirofumi; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2009-04-01

    We fabricated a device equipped with a microchannel on a complementary metal oxide semiconductor (CMOS) sensor to observe the optical polarization rotation angle during in situ monitoring. The sensor is based on the integrated wire-grid polarization detection method. The microchannel is fabricated on a Si layer by deep reactive ion etching (DRIE). Using this device, we measured the optical rotation of chiral molecules in a microfluid. This showed that the device is applicable to in situ chiral measurement. Optical rotation angles of the linearly polarized light corresponded to different concentrations of sucrose solution. Sensor output reflecting the temporal concentration change of chiral molecules was also observed. These results clearly demonstrate that the CMOS sensor has the capability of measuring chiral molecules in situ.

  4. Thickness-tunable terahertz plasma oscillations in a semiconductor slab excited by femtosecond optical pulses

    SciTech Connect

    Glinka, Y. D.; Maryenko, D.; Smet, J. H.

    2008-07-15

    We report on the observation of terahertz oscillations in an electron-hole plasma optically excited by a femtosecond pulse in the {mu}m-sized slab of low-temperature-grown-GaAs (LT-GaAs) grown on the GaAs substrate. The frequency of oscillations is shown to be inversely proportional to the slab thickness. It is suggested that the LT-GaAs slab serves as a resonant cavity for traveling plasma waves, which have been generated as a consequence of the shock interaction of photoexcited electron plasma with the GaAs/LT-GaAs interface. The instantaneous diffusion of photoexcited plasma inward the material is driven by the density gradient over the Beer's law distributed carrier population and is evidenced to be a main reason of the shock interaction in the localized plasma. The frequencies of oscillations observed are 3.5 times larger that the inverse electron transit time in the LT-GaAs slab, suggesting the 'ballistic' regime for plasma wave propagation to occur. The oscillations have been observed in the photocurrent autocorrelation measurements. The dynamical electric field at the GaAs/LT-GaAs interface arising due to the instantaneous diffusion of photoexcited electrons inward the material was studied through the transient reflectivity change responses, which have been measured simultaneously with photocurrent.

  5. Deformation Measurement of a Driven Pile Using Distributed Fibre-optic Sensing

    NASA Astrophysics Data System (ADS)

    Monsberger, Christoph; Woschitz, Helmut; Hayden, Martin

    2016-03-01

    New developments in distributed fibre-optic sensing allow the measurement of strain with a very high precision of about 1 µm / m and a spatial resolution of 10 millimetres or even better. Thus, novel applications in several scientific fields may be realised, e. g. in structural monitoring or soil and rock mechanics. Especially due to the embedding capability of fibre-optic sensors, fibre-optic systems provide a valuable extension to classical geodetic measurement methods, which are limited to the surface in most cases. In this paper, we report about the application of an optical backscatter reflectometer for deformation measurements along a driven pile. In general, pile systems are used in civil engineering as an efficient and economic foundation of buildings and other structures. Especially the length of the piles is crucial for the final loading capacity. For optimization purposes, the interaction between the driven pile and the subsurface material is investigated using pile testing methods. In a field trial, we used a distributed fibre-optic sensing system for measuring the strain below the surface of an excavation pit in order to derive completely new information. Prior to the field trial, the fibre-optic sensor was investigated in the laboratory. In addition to the results of these lab studies, we briefly describe the critical process of field installation and show the most significant results from the field trial, where the pile was artificially loaded up to 800 kN. As far as we know, this is the first time that the strain is monitored along a driven pile with such a high spatial resolution.

  6. Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Tilka, J. A.; Park, J.; Ahn, Y.; Pateras, A.; Sampson, K. C.; Savage, D. E.; Prance, J. R.; Simmons, C. B.; Coppersmith, S. N.; Eriksson, M. A.; Lagally, M. G.; Holt, M. V.; Evans, P. G.

    2016-07-01

    The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent x-ray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.

  7. Thermo-optically driven adaptive mirror based on thermal expansion: preparation and resolution

    NASA Astrophysics Data System (ADS)

    Reinert, Felix; Lüthy, W.

    2005-12-01

    A thermo-optically driven adaptive mirror is presented. It is based on the thermal expansion of a thin film heated with a light pattern. We describe a procedure for the preparation of a silicon elastomer with a high-quality optical surface. This material, Sylgard 184, has a high linear thermal expansion coefficient of 3.1μ10-4 K-1. Surface modulations are recorded in an interferometer. Modulations of 350 nm result at an intensity of 370 mW/cm2. The resolution is measured with a line pattern. The contrast drops to 30 % at 1.6 line pairs per millimeter (lp/mm).

  8. Thermo-optically driven adaptive mirror based on thermal expansion: preparation and resolution.

    PubMed

    Reinert, Felix; Lüthy, W

    2005-12-26

    A thermo-optically driven adaptive mirror is presented. It is based on the thermal expansion of a thin film heated with a light pattern. We describe a procedure for the preparation of a silicon elastomer with a high-quality optical surface. This material, Sylgard 184, has a high linear thermal expansion coefficient of 3.110-4 K-1. Surface modulations are recorded in an interferometer. Modulations of 350 nm result at an intensity of 370 mW/cm2. The resolution is measured with a line pattern. The contrast drops to 30 % at 1.6 line pairs per millimeter (lp/mm).

  9. Measurement of an Explosively Driven Hemispherical Shell Using 96 Points of Optical Velocimetry

    SciTech Connect

    Danielson, J. R.; Daykin, E P; Diaz, A. B.; Doty, D. L.; Frogget, B. C.; Furlanetto, M. R.; Gallegos, C. H.; Gibo, M; Garza, A; Holtkamp, D B; Hutchins, M S; Perez, C; Perez, C; Pena, M; Romero, V T; Shinas, M A; Teel, M G; Tabaka, L J

    2014-04-01

    We report the measurement of the surface motion of a hemispherical copper shell driven by high explosives. This measurement was made using three 32-channel multiplexed photonic Doppler velocimetry (PDV) systems, in combination with a novel compound optical probe. Clearly visible are detailed features of the motion of the shell over time, enhanced by spatial correlation. Significant non-normal motion is apparent, and challenges in measuring such a geometry are discussed.

  10. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems

    SciTech Connect

    Chen, Ying

    2011-01-01

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in π-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at ΔmS=±1 and ΔmS=±2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal

  11. Observation of reflection feedback induced the formation of bright-dark pulse pairs in an optically pumped semiconductor laser.

    PubMed

    Tsou, C H; Liang, H C; Huang, K F; Chen, Y F

    2016-06-13

    It is experimentally demonstrated that the tiny reflection feedback can lead the optically pumped semiconductor laser (OPSL) to be operated in a self-mod-locked state with a pulse train of bright-dark pulse pairs. A theoretical model based on the multiple reflections in a phase-locked multi-longitudinal-mode laser is developed to confirm the formation of bright-dark pulse pairs. The present finding can offer an important insight into the temporal dynamics in mode-locked OPSLs. PMID:27410319

  12. Direct measurement of lattice dynamics and optical phonon excitation in semiconductor nanocrystals using femtosecond stimulated Raman spectroscopy.

    PubMed

    Hannah, Daniel C; Brown, Kristen E; Young, Ryan M; Wasielewski, Michael R; Schatz, George C; Co, Dick T; Schaller, Richard D

    2013-09-01

    We report femtosecond stimulated Raman spectroscopy measurements of lattice dynamics in semiconductor nanocrystals and characterize longitudinal optical (LO) phonon production during confinement-enhanced, ultrafast intraband relaxation. Stimulated Raman signals from unexcited CdSe nanocrystals produce a spectral shape similar to spontaneous Raman signals. Upon photoexcitation, stimulated Raman amplitude decreases owing to experimentally resolved ultrafast phonon generation rates within the lattice. We find a ∼600  fs, particle-size-independent depletion time attributed to hole cooling, evidence of LO-to-acoustic down-conversion, and LO phonon mode softening. PMID:25166708

  13. Consideration for the dynamic depolarization in the effective-medium model for description of optical properties for anisotropic nanostructured semiconductors

    SciTech Connect

    Golovan, L. A.; Zabotnov, S. V. Timoshenko, V. Yu.; Kashkarov, P. K.

    2009-02-15

    The effective-medium model has been generalized within the dipole approximation, with allowance for the shape anisotropy and dynamic depolarization of semiconductor nanoparticles. The calculations revealed nonmonotonic dependences for the birefringence and dichroism on the nanoparticle size. Comparison of the measured and calculated refractive index dispersion of birefringent porous silicon layers in the near-IR region indicates that consideration for the dynamic depolarization gives a better description of the optical properties for this material in comparison with the generally used effective-medium electrostatic approximation.

  14. Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

    DOE PAGES

    Gehl, Michael; Gibson, Ricky; Zandbergen, Sander; Keiffer, Patrick; Sears, Jasmine; Khitrova, Galina

    2016-02-01

    Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors,more » with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.« less

  15. Optical and Magnetic Resonance Studies of Defects in Iii-V Compound Semiconductors.

    NASA Astrophysics Data System (ADS)

    Sun, Honjiang

    This dissertation describes experimental studies of the basic properties of impurities and defects in III -V compound semiconductors, using a variety of optical and magnetic resonance techniques. The materials used include InP, GaP, and the Al-GaAs alloy. The methods of investigation include absorption, PL, laser spectroscopy, polarization, electron-irradiation, MCD, ODMR, and ODENDOR. The ODENDOR technique is used to investigate a phosphorus antisite-related defect in as-grown p-type GaP. The defect has been previously identified as arising from an excited S = 1 state via luminescence at ~ 1.1eV. It is established that the observed ODENDOR transitions arise from the M_{s} = 0 state, causing unusual magnetic field and orientation effects. Analysis to high-order perturbation theory and/or matrix diagonalization is required. Hyperfine interactions with the central P and several shells of both P and Ga neighbors are observed confirming that the defect has a P_{Ga}-Y_ {p} structure and that the electronic wave function is highly localized. Two antisite structures in InP have been observed and identified using ODENDOR investigation. One of these is the isolated P_{In} antisite previously studied in as-grown and electron-irradiated p-type InP. Another is the perturbed one observed only in electron-irradiated InP. The energy position of the P_sp{In}{+}/P_sp {In}{++}<=vel of the isolated antisite is estimated to be E_{V} + 1.1 +/- 0.05 eV and that of the P_sp{In}{0}/P _sp{In}{+}<=vel is estimated to be E_{V} + 1.39 +/- 0.01 eV. The dependence of the ODENDOR signals of the perturbed antisite on irradiation dose, detection wavelength, and illumination suggests that at least two slightly different such defects are present after the electron irradiation. Our results indicate that the defects are produced by the electron irradiation and are not initially present in the as-grown materials. In as-grown n-type InP:Sn, a broad (Delta B = 360G), structureless, and isotropic g = 1

  16. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

    PubMed

    Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

    2015-12-01

    Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics. PMID:26535800

  17. Efficient Light-driven Long Distance Charge Separation and H2 Generation in Semiconductor Quantum Rods and Nanoplatelets

    NASA Astrophysics Data System (ADS)

    Lian, Tianquan

    Quantum confined semiconductor nanocrystals (0D quantum dots, 1D quantum rods and 2D quantum platlets) have been intensively investigated as light harvesting and charge separation materials for photovoltaic and photocatalytic applications. The efficiency of these semiconductor nanocrystal-based devices depends on many fundamental processes, including light harvesting, carrier relaxation, exciton localization and transport, charge separation and charge recombination. The competition between these processes determines the overall solar energy conversion (solar to electricity or fuel) efficiency. Semiconductor nano-heterostructures, combining two or more material components, offer unique opportunities to control their charge separation properties by tailoring their compositions, dimensions and spatial arrangement. Further integration of catalysts (heterogeneous or homogeneous) to these materials form multifunctional nano-heterostructures. Using 0D, 1D and 2D CdSe/CdS/Pt heterostructures as model systems, we directly probe the above-mentioned fundamental exciton and carrier processes by transient absorption and time-resolved fluorescence spectroscopy. We are examining how to control these fundamental processes through the design of heterostructures to achieve long-lived charge separation and efficient H2 generation. In this talk, we will discuss a new model for exciton dissociation by charge transfer in quantum dots (i.e. Auger assisted electron transfer), mechanism of 1D and 2D exciton transport and dissociation in nanorods, and key factors limiting H2 generation efficiency in CdSe/CdS/Pt nanorod heterostructures.

  18. 25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Zeghuzi, A. Schmeckebier, H.; Stubenrauch, M.; Bimberg, D.; Meuer, C.; Schubert, C.; Bunge, C.-A.

    2015-05-25

    Error-free generation of 25-Gbit/s differential phase-shift keying (DPSK) signals via direct modulation of InAs quantum-dot (QD) based semiconductor optical amplifiers (SOAs) is experimentally demonstrated with an input power level of −5 dBm. The QD SOAs emit in the 1.3-μm wavelength range and provide a small-signal fiber-to-fiber gain of 8 dB. Furthermore, error-free DPSK modulation is achieved for constant optical input power levels from 3 dBm down to only −11 dBm for a bit rate of 20 Gbit/s. Direct phase modulation of QD SOAs via current changes is thus demonstrated to be much faster than direct gain modulation.

  19. Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Karni, O. Mikhelashvili, V.; Eisenstein, G.; Kuchar, K. J.; Capua, A.; Sęk, G.; Misiewicz, J.; Ivanov, V.; Reithmaier, J. P.

    2014-03-24

    We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

  20. Optically and electrically driven organic thin film transistors with diarylethene photochromic channel layers.

    PubMed

    Hayakawa, Ryoma; Higashiguchi, Kenji; Matsuda, Kenji; Chikyow, Toyohiro; Wakayama, Yutaka

    2013-05-01

    We achieved drain-current switching of diarylethene-channel field-effect transistors with light- and electric-field effects. The drain current was reversibly changed by alternating ultraviolet and visible light irradiation. Stress is placed on the fact that the on/off ratio realized by light irradiation was 1 × 10(2) (1 × 10(4)%) and this value is much larger than those in other photochromism-based transistors. These results indicate that the drain current was effectively controlled by light irradiation. Furthermore, the on and off states modulated by light were maintained without light irradiation even after 1 week, exhibiting that our transistor works as an optical memory. We clarified that the light-driven modulation can be attributed to the transformation in the π-conjugation system accompanied by photoisomerization. These findings have the potential to attain high-performance optoelectrical organic devices including optical sensors, optical memory, and photoswitching transistors.

  1. Optically controlled dense current structures driven by relativistic plasma aperture-induced diffraction

    NASA Astrophysics Data System (ADS)

    Gonzalez-Izquierdo, Bruno; Gray, Ross J.; King, Martin; Dance, Rachel J.; Wilson, Robbie; McCreadie, John; Butler, Nicholas M. H.; Capdessus, Remi; Hawkes, Steve; Green, James S.; Borghesi, Marco; Neely, David; McKenna, Paul

    2016-05-01

    The collective response of charged particles to intense fields is intrinsic to plasma accelerators and radiation sources, relativistic optics and many astrophysical phenomena. Here we show that a relativistic plasma aperture is generated in thin foils by intense laser light, resulting in the fundamental optical process of diffraction. The plasma electrons collectively respond to the resulting laser near-field diffraction pattern, producing a beam of energetic electrons with a spatial structure that can be controlled by variation of the laser pulse parameters. It is shown that static electron-beam and induced-magnetic-field structures can be made to rotate at fixed or variable angular frequencies depending on the degree of ellipticity in the laser polarization. The concept is demonstrated numerically and verified experimentally, and is an important step towards optical control of charged particle dynamics in laser-driven dense plasma sources.

  2. Nonequilibrium optical properties in semiconductors from first principles: A combined theoretical and experimental study of bulk silicon

    NASA Astrophysics Data System (ADS)

    Sangalli, Davide; Dal Conte, Stefano; Manzoni, Cristian; Cerullo, Giulio; Marini, Andrea

    2016-05-01

    The calculation of the equilibrium optical properties of bulk silicon by using the Bethe-Salpeter equation solved in the Kohn-Sham basis represents a cornerstone in the development of an ab-initio approach to the optical and electronic properties of materials. Nevertheless, calculations of the transient optical spectrum using the same efficient and successful scheme are scarce. We report, here, a joint theoretical and experimental study of the transient reflectivity spectrum of bulk silicon. Femtosecond transient reflectivity is compared to a parameter-free calculation based on the nonequilibrium Bethe-Salpeter equation. By providing an accurate description of the experimental results we disclose the different phenomena that determine the transient optical response of a semiconductor. We give a parameter-free interpretation of concepts such as bleaching, photoinduced absorption, and stimulated emission, beyond the Fermi golden rule. We also introduce the concept of optical gap renormalization, as a generalization of the known mechanism of band gap renormalization. The present scheme successfully describes the case of bulk silicon, showing its universality and accuracy.

  3. Narrow linewidth broadband tunable semiconductor laser at 840 nm with dual acousto-optic tunable configuration for OCT applications

    NASA Astrophysics Data System (ADS)

    Chamorovskiy, Alexander; Shramenko, Mikhail V.; Lobintsov, Andrei A.; Yakubovich, Sergei D.

    2016-03-01

    We demonstrate a tunable narrow linewidth semiconductor laser for the 840 nm spectral range. The laser has a linear cavity comprised of polarization maintaining (PM) fiber. A broadband semiconductor optical amplifier (SOA) in in-line fiber-coupled configuration acts as a gain element. It is based on InGaAs quantum-well (QW) active layer. SOA allows for tuning bandwidth exceeding 25 nm around 840 nm. Small-signal fiber-to-fiber gain of SOA is around 30 dB. A pair of acousto-optic tunable filters (AOTF) with a quasi-collinear interaction of optical and acoustic waves are utilized as spectrally selective elements. AOTF technology benefits in continuous tuning, broadband operation, excellent reproducibility and stability of the signal, as well as a high accuracy of wavelength selectivity due to the absence of mechanically moving components. A single AOTF configuration has typical linewidth in 0.05-0.15 nm range due to a frequency shift obtained during each roundtrip. A sequential AOTF arrangement enables instantaneous linewidth generation of <0.01 nm by compensating for this shift. Linewidth as narrow as 0.0036 nm is observed at 846 nm wavelength using a scanning Fabry-Perot interferometer with 50 MHz spectral resolution. Output power is in the range of 1 mW. While the majority of commercial tunable sources operate in 1060-1550 nm spectral ranges, the 840 nm spectral range is beneficial for optical coherence tomography (OCT). The developed narrow linewidth laser can be relevant for OCT with extended imaging depth, as well as spectroscopy, non-destructive testing and other applications.

  4. NONLINEAR OPTICAL PHENOMENA: Self-reflection effect in semiconductors in a two-pulse regime

    NASA Astrophysics Data System (ADS)

    Khadzhi, P. I.; Nad'kin, L. Yu

    2004-12-01

    Peculiarities of reflection at the end face of a semi-infinite semiconductor in a two-pulse regime are studied. The reflection functions behave in a complex and ambiguous manner governed by the amplitudes of the fields of incident pulses. The possibility of a complete bleaching of the medium for the field in the M-band is predicted.

  5. Ultrafast all-optical logic OR gate based on two-photon absorption with a semiconductor optical amplifier-assisted delayed interferometer

    NASA Astrophysics Data System (ADS)

    Kotb, Amer

    2016-01-01

    The performance of an all-optical logic OR gate is numerically studied and simulated. This Boolean operation is realized by using a semiconductor optical amplifier (SOA) and a delayed interferometer (DI) based on two-photon absorption (TPA). The input pulse intensities are high enough so that the two-photon-induced phase change is larger than the regular gain-induced phase change. The study is carried out with the effect of the amplified spontaneous emission (ASE) taken into account in the simulation analysis. The dependence of the output quality factor ( Q-factor) on the data signals and SOA's parameters is also investigated and discussed. The achieved results show that the OR gate is capable of operating at a data speed of 250 Gb/s with logical correctness and proper Q-factor.

  6. Miniaturized magnetic-driven scanning probe for endoscopic optical coherence tomography.

    PubMed

    Pang, Ziwei; Wu, Jigang

    2015-06-01

    We designed and implemented a magnetic-driven scanning (MDS) probe for endoscopic optical coherence tomography (OCT). The probe uses an externally-driven tiny magnet in the distal end to achieve unobstructed 360-degree circumferential scanning at the side of the probe. The design simplifies the scanning part inside the probe and thus allows for easy miniaturization and cost reduction. We made a prototype probe with an outer diameter of 1.4 mm and demonstrated its capability by acquiring OCT images of ex vivo trachea and artery samples from a pigeon. We used a spectrometer-based Fourier-domain OCT system and the system sensitivity with our prototype probe was measured to be 91 dB with an illumination power of 850 μW and A-scan exposure time of 1 ms. The axial and lateral resolutions of the system are 6.5 μm and 8.1 μm, respectively. PMID:26114041

  7. Miniaturized magnetic-driven scanning probe for endoscopic optical coherence tomography.

    PubMed

    Pang, Ziwei; Wu, Jigang

    2015-06-01

    We designed and implemented a magnetic-driven scanning (MDS) probe for endoscopic optical coherence tomography (OCT). The probe uses an externally-driven tiny magnet in the distal end to achieve unobstructed 360-degree circumferential scanning at the side of the probe. The design simplifies the scanning part inside the probe and thus allows for easy miniaturization and cost reduction. We made a prototype probe with an outer diameter of 1.4 mm and demonstrated its capability by acquiring OCT images of ex vivo trachea and artery samples from a pigeon. We used a spectrometer-based Fourier-domain OCT system and the system sensitivity with our prototype probe was measured to be 91 dB with an illumination power of 850 μW and A-scan exposure time of 1 ms. The axial and lateral resolutions of the system are 6.5 μm and 8.1 μm, respectively.

  8. Novel monolithic integration scheme for high-speed electroabsorption modulators and semiconductor optical amplifiers using cascaded structure.

    PubMed

    Lin, Fang-Zheng; Wu, Tsu-Hsiu; Chiu, Yi-Jen

    2009-06-01

    A new monolithic integration scheme, namely cascaded-integration (CI), for improving high-speed optical modulation is proposed and demonstrated. High-speed electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs) are taken as the integrated elements of CI. This structure is based on an optical waveguide defined by cascading segmented EAMs with segmented SOAs, while high-impedance transmission lines (HITLs) are used for periodically interconnecting EAMs, forming a distributive optical re-amplification and re-modulation. Therefore, not only the optical modulation can be beneficial from SOA gain, but also high electrical reflection due to EAM low characteristic impedance can be greatly reduced. Two integration schemes, CI and conventional single-section (SS), with same total EAM- and SOA- lengths are fabricated and compared to examine the concept. Same modulation-depth against with EAM bias (up to 5V) as well as SOA injection current (up to 60mA) is found in both structures. In comparison with SS, a < 1dB extra optical-propagation loss in CI is measured due to multi-sections of electrical-isolation regions between EAMs and SOAs, suggesting no significant deterioration in CI on DC optical modulation efficiency. Lower than -12dB of electrical reflection from D.C. to 30GHz is observed in CI, better than -5dB reflection in SS for frequency of above 5GHz. Superior high-speed electrical properties in CI structure can thus lead to higher speed of electrical-to-optical (EO) response, where -3dB bandwidths are >30GHz and 13GHz for CI and SS respectively. Simulation results on electrical and EO response are quite consistent with measurement, confirming that CI can lower the driving power at high-speed regime, while the optical loss is still kept the same level. Taking such distributive advantage (CI) with optical gain, not only higher-speed modulation with high output optical power can be attained, but also the trade-off issue due to impedance mismatch

  9. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    SciTech Connect

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  10. Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor.

    PubMed

    Goodfellow, Kenneth M; Chakraborty, Chitraleema; Beams, Ryan; Novotny, Lukas; Vamivakas, A Nick

    2015-08-12

    The determination to develop fast, efficient devices has led to vast studies on photonic circuits but it is difficult to shrink these circuits below the diffraction limit of light. However, the coupling between surface plasmon polaritons and nanostructures in the near-field shows promise in developing next-generation integrated circuitry. In this work, we demonstrate the potential for integrating nanoplasmonic-based light guides with atomically thin materials for on-chip near-field plasmon detection. Specifically, we show near-field electrical detection of silver nanowire plasmons with the atomically thin semiconductor molybdenum disulfide. Unlike graphene, atomically thin semiconductors such as molybdenum disulfide exhibit a bandgap that lends itself for the excitation and detection of plasmons. Our fully integrated plasmon detector exhibits plasmon responsivities of ∼255 mA/W that corresponds to highly efficient plasmon detection (∼0.5 electrons per plasmon). PMID:26120877

  11. Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor.

    PubMed

    Goodfellow, Kenneth M; Chakraborty, Chitraleema; Beams, Ryan; Novotny, Lukas; Vamivakas, A Nick

    2015-08-12

    The determination to develop fast, efficient devices has led to vast studies on photonic circuits but it is difficult to shrink these circuits below the diffraction limit of light. However, the coupling between surface plasmon polaritons and nanostructures in the near-field shows promise in developing next-generation integrated circuitry. In this work, we demonstrate the potential for integrating nanoplasmonic-based light guides with atomically thin materials for on-chip near-field plasmon detection. Specifically, we show near-field electrical detection of silver nanowire plasmons with the atomically thin semiconductor molybdenum disulfide. Unlike graphene, atomically thin semiconductors such as molybdenum disulfide exhibit a bandgap that lends itself for the excitation and detection of plasmons. Our fully integrated plasmon detector exhibits plasmon responsivities of ∼255 mA/W that corresponds to highly efficient plasmon detection (∼0.5 electrons per plasmon).

  12. Characterization of laser-driven shock waves in solids using a fiber optic pressure probe

    DOE PAGES

    Cranch, Geoffrey A.; Lunsford, Robert; Grun, Jacob; Weaver, James; Compton, Steve; May, Mark; Kostinski, Natalie

    2013-11-08

    Measurement of laser-driven shock wave pressure in solid blocks of polymethyl methacrylate is demonstrated using fiber optic pressure probes. Three probes based on a fiber Fabry–Perot, fiber Bragg grating, and interferometric fiber tip sensor are tested and compared. Shock waves are generated using a high-power laser focused onto a thin foil target placed in close proximity to the test blocks. The fiber Fabry–Perot sensor appears capable of resolving the shock front with a rise time of 91 ns. As a result, the peak pressure is estimated, using a separate shadowgraphy measurement, to be 3.4 GPa.

  13. Photon Statistics of a Two-Level Atom in a Driven Optical Cavity

    NASA Astrophysics Data System (ADS)

    Clemens, James; Rice, Perry

    1997-10-01

    We consider the second-order intensity correlation function g^(τ ) for a single two-level atom in an optical cavity driven by a classical field. Previous results are extended beyond the weak-field limit, using a quantum trajectory method. Manifestly quantum behavior is observed, and we compare our results to recent experiments by Mielke et. al. ( S. L. Mielke, G. T. Foster, and L. A. Orozco, submitted to Physical Review Letters.) More information can be found at http://muohio.edu/ ~ ricepr/research.htm.

  14. Ultrafast spectroscopic measurement of the optical and electronic properties of narrow-band-gap semiconductor laser materials

    NASA Astrophysics Data System (ADS)

    Anson, Scott Allen

    1999-12-01

    Semiconductor lasers operating in the mid-infrared region of the spectrum (2-5 μm) are of interest for a variety of potential applications and therefore are currently the focus of intense research and development. One of the main impediments to the development of these lasers is a non-radiative loss process know as Auger recombination. It is this loss mechanism that leads to the relatively low temperature operation of these lasers. In addition to Auger recombination, there is an interest in suppressing laser which can lead to the degradation and catastrophic failure of devices at high output powers. The tendency for filament formation is suppressed in materials with small linewidth enhancement factors. To improve the performance of these semiconductor lasers, band structure engineering techniques have been employed to the design of narrow band-gap III-V semiconductor active regions based on GaInSb/InAs superlattices. These superlattice structures are designed to have favorable material properties that allow for the suppression of Auger recombination and a reduction of the linewidth enhancement factor. In addition to Auger recombination and the linewidth enhancement factor, a number of other optical and electronic properties in these superlattice structures are also of interest, including the differential gain, differential index, Shockley-Read-Hall recombination, and in-plane carrier diffusion. In this dissertation measurements of the optical and electronic properties in these structures conducted using two ultrafast spectroscopic techniques, time-resolved differential transmission and photogenerated transient grating is discussed. These ultrafast spectroscopic measurements are performed using 140 fs pump pulses from a mode-locked Ti:sapphire laser operating at 840 nm and 170 fs probe pulses from a synchronously-pumped optical parametric oscillator which is tunable between 2.65 to 4.4 μm. The measurements show that these superlattices have favorable material

  15. Simultaneous monitoring of singlet and triplet exciton variations in solid organic semiconductors driven by an external static magnetic field

    SciTech Connect

    Ding, Baofu Alameh, Kamal

    2014-07-07

    The research field of organic spintronics has remarkably and rapidly become a promising research area for delivering a range of high-performance devices, such as magnetic-field sensors, spin valves, and magnetically modulated organic light emitting devices (OLEDs). Plenty of microscopic physical and chemical models based on exciton or charge interactions have been proposed to explain organic magneto-optoelectronic phenomena. However, the simultaneous observation of singlet- and triplet-exciton variations in an external magnetic field is still unfeasible, preventing a thorough theoretical description of the spin dynamics in organic semiconductors. Here, we show that we can simultaneously observe variations of singlet excitons and triplet excitons in an external magnetic field, by designing an OLED structure employing a singlet-exciton filtering and detection layer in conjunction with a separate triplet-exciton detection layer. This OLED structure enables the observation of a Lorentzian and a non-Lorentzian line-shape magnetoresponse for singlet excitons and triplet excitons, respectively.

  16. Fluctuation-driven topological transition of binary condensates in optical lattices

    NASA Astrophysics Data System (ADS)

    Suthar, K.; Roy, Arko; Angom, D.

    2015-04-01

    We show the emergence of a third Goldstone mode in binary condensates at phase separation in quasi-one-dimensional (quasi-1D) optical lattices. We develop the coupled discrete nonlinear Schrödinger equations using Hartree-Fock-Bogoliubov theory with the Popov approximation in the Bose-Hubbard model to investigate the mode evolution at zero temperature, in particular, as the system is driven from the miscible to the immiscible phase. We demonstrate that the position exchange of the species in the 87Rb-85Rb system is accompanied by a discontinuity in the excitation spectrum. Our results show that, in quasi-1D optical lattices, the presence of the fluctuations dramatically changes the geometry of the ground-state density profile of two-component Bose-Einstein condensates.

  17. High-Q silica zipper cavity for optical radiation pressure driven MOMS switch

    SciTech Connect

    Tetsumoto, Tomohiro; Tanabe, Takasumi

    2014-07-15

    We design a silica zipper cavity that has high optical and mechanical Q (quality factor) values and demonstrate numerically the feasibility of a radiation pressure driven micro opto-mechanical system (MOMS) directional switch. The silica zipper cavity has an optical Q of 4.0 × 10{sup 4} and an effective mode volume V{sub mode} of 0.67λ{sup 3} when the gap between two cavities is 34 nm. The mechanical Q (Q{sub m}) is determined by thermo-elastic damping and is 2.0 × 10{sup 6} in a vacuum at room temperature. The opto-mechanical coupling rate g{sub OM} is as high as 100 GHz/nm, which allows us to move the directional cavity-waveguide system and switch 1550-nm light with 770-nm light by controlling the radiation pressure.

  18. Development of dielectric elastomer driven micro-optical zoom lens system

    NASA Astrophysics Data System (ADS)

    Kim, Hyunseok; Park, Jongkil; Chuc, Nguyen Huu; Choi, H. R.; Nam, J. D.; Lee, Y.; Jung, H. S.; Koo, J. C.

    2007-04-01

    Normally, various micro-scale devices adopt electromechanical actuators for their basic mechanical functions. Those types of actuators require a complicated power transfer system even for generating a tiny scale motion. Since the mechanical power transfer system for the micro-scale motion may require many components, the system design to fit those components into a small space is always challenging. Micro-optical zoom lens systems are recently popularly used for many portable IT devices such as digital cameras, camcorder, and cell phones, Noting the advantages of EAP actuators over the conventional electromechanical counterparts in terms of simple actuator mechanisms, a micro-optic device that is driven with the EAP actuator is introduced in the present work. EAP material selection, device design and fabrication will be also delineated.

  19. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application

    PubMed Central

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  20. Optimization of torque on an optically driven micromotor by manipulation of the index of refraction

    NASA Astrophysics Data System (ADS)

    Wing, Frank M., III; Mahajan, Satish; Collett, Walter

    2004-12-01

    Since the 1970"s, the focused laser beam has become a familiar tool to manipulate neutral, dielectric micro-objects. A number of authors, including Higurashi and Gauthier, have described the effects of radiation pressure from laser light on microrotors. Collett, et al. developed a wave, rather than a ray optic, approach in the calculation of such forces on a microrotor for the first time. This paper describes a modification to the design of a laser driven, radiation pressure microrotor, intended to improve the optically generated torque. Employing the wave approach, the electric and magnetic fields in the vicinity of the rotor are calculated using the finite difference time domain (FDTD) method, which takes into account the wave nature of the incident light. Forces are calculated from the application of Maxwell"s stress tensor over the surfaces of the rotor. Results indicate a significant increase in torque when the index of refraction of the microrotor is changed from a single value to an inhomogeneous profile. The optical fiber industry has successfully employed a variation in the index of refraction across the cross section of a fiber for the purpose of increasing the efficiency of light transmission. Therefore, it is hoped that various fabrication methods can be utilized for causing desired changes in the index of refraction of an optically driven microrotor. Various profiles of the index of refraction inside a microrotor are considered for optimization of torque. Simulation methodology and results of torque on a microrotor for various profiles of the index of refraction are presented. Guidelines for improvised fabrication of efficient microrotors may then be obtained from these profiles.

  1. Electrical conductivity, optical properties and mechanical stability of 3, 4, 9, 10-perylenetetracarboxylic dianhidride based organic semiconductor

    NASA Astrophysics Data System (ADS)

    Pandey, Mayank; Joshi, Girish M.; Deshmukh, Kalim; Nath Ghosh, Narendra; Nambi Raj, N. Arunai

    2015-05-01

    The 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) doped polymer films were prepared with Polypyrrole (PPy) and Polyvinyl alcohol (PVA) polymers by solution-casting. The change in structure and chemical composition of samples was identified by XRD and FTIR respectively. The UV-visible spectroscopy demonstrates the optical characteristics and band gap properties of sample. The homogeneous morphology of sample for higher wt% of PTCDA was examined by atomic force microscopy (AFM). The differential scanning calorimetry (DSC) results demonstrate the decrease in melting temperature (Tm) and degree of crystallinity (χc%) of polymeric organic semiconductor. The mechanical property demonstrates the high tensile strength and improved plasticity nature. Impedance spectroscopy was evaluated to determine the conductivity response of polymeric organic semiconductor. The highest DC conductivity (2.08×10-3 S/m) was obtained for 10 wt% of PTCDA at 140 °C. The decrease in activation energy (Ea) represents the non-Debye process and was evaluated from the slope of ln σdc vs. 103/T plot.

  2. Demonstration and optimisation of an ultrafast all-optical AND logic gate using four-wave mixing in a semiconductor optical amplifier

    SciTech Connect

    Razaghi, M; Nosratpour, A; Das, N K

    2013-02-28

    We have proposed an all-optical AND logic gate based on four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) integrated with an optical filter. In the scheme proposed, the preferred logical function can be performed without using a continuous-wave (cw) signal. The modified nonlinear Schroedinger equation (MNLSE) is used for the modelling wave propagation in a SOA. The MNLSE takes into account all nonlinear effects relevant to pico- and sub-picosecond pulse durations and is solved by the finite-difference beam-propagation method (FD-BPM). Based on the simulation results, the optimal output signal with a 40-fJ energy can be obtained at a bit rate of 50 Gb s{sup -1}. In the simulations, besides the nonlinearities included in the model, the pattern effect of the signals propagating in the SOA medium and the effect of the input signal bit rate are extensively investigated to optimise the system performance. (optical logic elements)

  3. Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

    SciTech Connect

    Ziegler, Mathias; Hempel, Martin; Tomm, Jens W.; Elsaesser, Thomas; Larsen, Henning E.; Andersen, Peter E.; Clausen, Soennik; Elliott, Stella N.

    2010-07-12

    The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters.

  4. Optical design of the Fresnel lens for LED-driven flashlight.

    PubMed

    Chen, Yi-Cheng; Nian, Shih-Chih; Huang, Ming-Shyan

    2016-02-01

    The Fresnel lens is composed of micrometer-sized v-groove structures that determine the maximum illuminance and brightness uniformity of LED-driven flashlights, which are used in high-quality photography. The fabrication quality of the microstructures and the accuracy of the geometrical curvature of the Fresnel lens affect the optical characteristics of the emitted light traveling through the lens, which in turn determines the maximum illuminance and brightness uniformity. This paper presents a systematic design procedure for fabricating the Fresnel lens and investigates the influence of geometrical design and fabrication process on optical performance. The optical analysis was performed using the commercial software TracePro. The results revealed that a small tip radius of the v-groove microstructure facilitates brightness uniformity. Furthermore, both the simulation and the experimental results revealed that Fresnel lenses fabricated through injection molding or injection compression molding have either errors of microstructure height more than 3%-6% or curvature errors higher than 6%, which would affect the optical performance, especially the brightness uniformity. PMID:26836072

  5. Optical design of the Fresnel lens for LED-driven flashlight.

    PubMed

    Chen, Yi-Cheng; Nian, Shih-Chih; Huang, Ming-Shyan

    2016-02-01

    The Fresnel lens is composed of micrometer-sized v-groove structures that determine the maximum illuminance and brightness uniformity of LED-driven flashlights, which are used in high-quality photography. The fabrication quality of the microstructures and the accuracy of the geometrical curvature of the Fresnel lens affect the optical characteristics of the emitted light traveling through the lens, which in turn determines the maximum illuminance and brightness uniformity. This paper presents a systematic design procedure for fabricating the Fresnel lens and investigates the influence of geometrical design and fabrication process on optical performance. The optical analysis was performed using the commercial software TracePro. The results revealed that a small tip radius of the v-groove microstructure facilitates brightness uniformity. Furthermore, both the simulation and the experimental results revealed that Fresnel lenses fabricated through injection molding or injection compression molding have either errors of microstructure height more than 3%-6% or curvature errors higher than 6%, which would affect the optical performance, especially the brightness uniformity.

  6. The preparation of organic infrared semiconductor phthalocyanine gadolinium (III) and its optical and structural characterizations

    NASA Astrophysics Data System (ADS)

    Tang, Li-bin; Ji, Rong-bin; Song, Li-yuan; Chen, Xue-mei; Ma, Yu; Wang, Yi-feng; Qian, Ming; Song, Lei; Su, Hai-ying; Zhuang, Ji-sheng; Yang, Rui-yu

    2009-07-01

    In order to increase the species of organic infrared semiconductor, we synthesized organic infrared semiconductor phthalocyanine gadolinium by using o-phthalodinitrile and GdCl3 as reactants, ammonium molybdate as catalyzer. Under light and dark field modes of microscope, the translucency emerald-like powder of phthalocyanine gadolinium has been observed, the size of the small grain for the sample is around 5μm in diameter, the size of larger grain may reach to several tens of microns. The main vibrational peaks in FT-IR spectrum and Raman spectrum have been assigned. Elementary analysis shows that the experimental data of phthalocyanine gadolinium in the main agree with those of calculated data. The UV-Vis absorption spectrum of the sample indicates the sandwich-like structure of phthalocyanine gadolinium. The organic infrared semiconductor phthalocyanine gadolinium thin film on quartz substrate has been prepared with our synthesized powdered sample by using solution method. The characterizations of XRD and UV-Vis-NIR absorption have been carried out for the phthalocyanine gadolinium thin film on quartz substrate, XRD shows that phthalocyanine gadolinium diffractions occur at 2θ=6.851,8.290 and 8.820 degrees, the corresponding plane spacings (d) for the diffraction peaks are 12.8921, 10.6570, and 10.0176Å.The diffraction peaks locate at low diffraction angle, suggesting that the molecular size of the phthalocyanine gadolinium is big that causes the large spacing of crystal planes. The UV-Vis-NIR absorption of phthalocyanine gadolinium thin film on quartz substrate implies that within near infrared band there is a absorption in the 1.3~2.0μm wavelength range peaked at ca. 1.75μm, indicating the important potential application value of phthalocyanine gadolinium in the field of organic infrared optoelectronics.

  7. Intense laser field effects on the linear and nonlinear optical properties in a semiconductor quantum wire with triangle cross section

    NASA Astrophysics Data System (ADS)

    Barseghyan, M. G.; Duque, C. A.; Niculescu, E. C.; Radu, A.

    2014-02-01

    We study the laser field effects on the intersubband optical absorption and the refractive index changes in a GaAs/AlGaAs quantum wire with equilateral triangle cross section. The wire is under the action of a laser beam which is assumed to be non-resonant with the semiconductor structure and linearly polarized perpendicularly to the triangle side. In the effective mass approximation and for a finite potential barrier we calculate the subband states by using a finite element method. Linear, non linear and total absorption coefficients and refractive index changes are calculated as functions of the laser field for the allowed intersubband transitions. Two polarizations of the pump radiation, parallel and perpendicular to the laser field direction, are discussed.

  8. Method to improve the noise figure and saturation power in multi-contact semiconductor optical amplifiers: simulation and experiment.

    PubMed

    Carney, Kevin; Lennox, Robert; Maldonado-Basilio, Ramon; Philippe, Severine; Surre, Frederic; Bradley, Louise; Landais, Pascal

    2013-03-25

    The consequences of tailoring the longitudinal carrier density along the active layer of a multi-contact bulk semiconductor optical amplifier (SOA) are investigated using a rate equation model. It is shown that both the noise figure and output power saturation can be optimized for a fixed total injected bias current. The simulation results are validated by comparison with experiment using a multi-contact SOA. The inter-contact resistance is increased using a focused ion beam in order to optimize the carrier density control. A chip noise figure of 3.8 dB and a saturation output power of 9 dBm are measured experimentally for a total bias current of 150 mA.

  9. High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xμm wavelength range

    NASA Astrophysics Data System (ADS)

    Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.

    2008-02-01

    We report on recent advances in the performance of GaSb-based optically pumped semiconductor disk lasers (OPSDLs), emitting in the 2.0 - 2.3 μm wavelength range. Both barrier pumped OPSDL (using 980 nm laser diodes as pump source) and in-well pumped OPSDL (using 1.96 μm pump radiation) have been fabricated and characterized. Using alternative SiC or diamond intracavity heatspreader, multiple-watt CW-output powers have been achieved (e.g. >3W at 2.3 μm and >5W at 2.0 μm), with power efficiencies in the range of 18 % - 25 %. For an optimised resonator setup, the beam profile is close to the diffraction limit with M2 values around 1.2; and even for the highest power levels, M2 is in the range of 2-5.

  10. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    PubMed

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift.

  11. Optical properties of layered III-VI semiconductor γ-InSe:M (M=Mn, Fe, Co, Ni)

    NASA Astrophysics Data System (ADS)

    Milutinović, Aleksandra; Lazarević, Zorica Ž.; Jakovljević, Milka; Hadzić, Branka; Petrović, Milica; Gilić, Martina; Dobrowolski, Witold Daniel; Romčević, Nebojša Ž.

    2016-02-01

    Indium selenide belongs to layered III-VI semiconductors with highly anisotropic optical and electronic properties. Energy gap of 1.32 eV makes this material very attractive for solar energy conversion. We investigated the influence of 1% 3-d transition metals M=Mn, Fe, Co, Ni, used as dopants, on energy levels of InSe:M in the range 1.4-6.5 eV and especially in the range of energy gap <1.4 eV by means of ellipsometric measurements. It was concluded that at ambient temperature foregoing dopants, all divalent, with 4s2 valent electrons, in the similar way influenced on blue-shift of energy levels in valent zone, but did not influence on the fundamental energy gap. Photoluminescence measurements confirmed blue-shift of the valent zone energy levels and an existence of deep impurity levels.

  12. Wavelength conversion for polarization multiplexing signal using four-wave mixing in semiconductor optical amplifier with reduced polarization crosstalk

    NASA Astrophysics Data System (ADS)

    Zhou, Hui; Chen, Ming; Wan, Qiuzhen; Zheng, Zhiwei

    2016-06-01

    We investigated wavelength conversion for polarization multiplexing signal based on four-wave mixing in a semiconductor optical amplifier. We found that the converted signals endured crosstalk among the pol-muxed channels. We also proposed and demonstrated a wavelength conversion scheme with polarization diversity technique. By utilizing the technique, the converted polarization multiplexing signal can be received without crosstalk. In addition, the performance of the proposed system is numerically analyzed with respect to the bit error rate of the converted signal, different frequency spacing between signal and pump and modulated data rate. The simulation results show that the proposed scheme may be a promising method to realize transparent wavelength conversion for polarization multiplexing signals.

  13. Analysis of the effects of periodic forcing in the spike rate and spike correlation's in semiconductor lasers with optical feedback

    NASA Astrophysics Data System (ADS)

    Quintero-Quiroz, C.; Sorrentino, Taciano; Torrent, M. C.; Masoller, Cristina

    2016-04-01

    We study the dynamics of semiconductor lasers with optical feedback and direct current modulation, operating in the regime of low frequency fluctuations (LFFs). In the LFF regime the laser intensity displays abrupt spikes: the intensity drops to zero and then gradually recovers. We focus on the inter-spike-intervals (ISIs) and use a method of symbolic time-series analysis, which is based on computing the probabilities of symbolic patterns. We show that the variation of the probabilities of the symbols with the modulation frequency and with the intrinsic spike rate of the laser allows to identify different regimes of noisy locking. Simulations of the Lang-Kobayashi model are in good qualitative agreement with experimental observations.

  14. Comparison of pulse propagation and gain saturation characteristics among different input pulse shapes in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Barua, Suchi; Das, Narottam; Nordholm, Sven; Razaghi, Mohammad

    2016-01-01

    This paper presents the pulse propagation and gain saturation characteristics for different input optical pulse shapes with different energy levels in semiconductor optical amplifiers (SOAs). A finite-difference beam propagation method (FD-BPM) is used to solve the modified nonlinear Schrödinger equation (MNLSE) for the simulation of nonlinear optical pulse propagation and gain saturation characteristics in the SOAs. In this MNLSE, the gain spectrum dynamics, gain saturation are taken into account those are depend on the carrier depletion, carrier heating, spectral hole-burning, group velocity dispersion, self-phase modulation and two photon absorption. From this simulation, we obtained the output waveforms and spectra for different input pulse shapes considering different input energy levels. It has shown that the output pulse shape has changed due to the variation of input parameters, such as input pulse shape, input pulse width, and input pulse energy levels. It also shown clearly that the peak position of the output waveforms are shifted toward the leading edge which is due to the gain saturation of the SOA. We also compared the gain saturation characteristics in the SOA for different input pulse shapes.

  15. High-purity 60GHz band millimeter-wave generation based on optically injected semiconductor laser under subharmonic microwave modulation.

    PubMed

    Fan, Li; Xia, Guangqiong; Chen, Jianjun; Tang, Xi; Liang, Qing; Wu, Zhengmao

    2016-08-01

    Based on an optically injected semiconductor laser (OISL) operating at period-one (P1) nonlinear dynamical state, high-purity millimeter-wave generation at 60 GHz band is experimentally demonstrated via 1/4 and 1/9 subharmonic microwave modulation (the order of subharmonic is with respect to the frequency fc of the acquired 60 GHz band millimeter-wave but not the fundamental frequency f0 of P1 oscillation). Optical injection is firstly used to drive a semiconductor laser into P1 state. For the OISL operates at P1 state with a fundamental frequency f0 = 49.43 GHz, by introducing 1/4 subharmonic modulation with a modulation frequency of fm = 15.32 GHz, a 60 GHz band millimeter-wave with central frequency fc = 61.28 GHz ( = 4fm) is experimentally generated, whose linewidth is below 1.6 kHz and SSB phase noise at offset frequency 10 kHz is about -96 dBc/Hz. For fm is varied between 13.58 GHz and 16.49 GHz, fc can be tuned from 54.32 GHz to 65.96 GHz under matched modulation power Pm. Moreover, for the OISL operates at P1 state with f0 = 45.02 GHz, a higher order subharmonic modulation (1/9) is introduced into the OISL for obtaining high-purity 60 GHz band microwave signal. With (fm, Pm) = (7.23 GHz, 13.00 dBm), a microwave signal at 65.07 GHz ( = 9fm) with a linewidth below 1.6 kHz and a SSB phase noise less than -98 dBc/Hz is experimentally generated. Also, the central frequency fc can be tuned in a certain range through adjusting fm and selecting matched Pm.

  16. High-purity 60GHz band millimeter-wave generation based on optically injected semiconductor laser under subharmonic microwave modulation.

    PubMed

    Fan, Li; Xia, Guangqiong; Chen, Jianjun; Tang, Xi; Liang, Qing; Wu, Zhengmao

    2016-08-01

    Based on an optically injected semiconductor laser (OISL) operating at period-one (P1) nonlinear dynamical state, high-purity millimeter-wave generation at 60 GHz band is experimentally demonstrated via 1/4 and 1/9 subharmonic microwave modulation (the order of subharmonic is with respect to the frequency fc of the acquired 60 GHz band millimeter-wave but not the fundamental frequency f0 of P1 oscillation). Optical injection is firstly used to drive a semiconductor laser into P1 state. For the OISL operates at P1 state with a fundamental frequency f0 = 49.43 GHz, by introducing 1/4 subharmonic modulation with a modulation frequency of fm = 15.32 GHz, a 60 GHz band millimeter-wave with central frequency fc = 61.28 GHz ( = 4fm) is experimentally generated, whose linewidth is below 1.6 kHz and SSB phase noise at offset frequency 10 kHz is about -96 dBc/Hz. For fm is varied between 13.58 GHz and 16.49 GHz, fc can be tuned from 54.32 GHz to 65.96 GHz under matched modulation power Pm. Moreover, for the OISL operates at P1 state with f0 = 45.02 GHz, a higher order subharmonic modulation (1/9) is introduced into the OISL for obtaining high-purity 60 GHz band microwave signal. With (fm, Pm) = (7.23 GHz, 13.00 dBm), a microwave signal at 65.07 GHz ( = 9fm) with a linewidth below 1.6 kHz and a SSB phase noise less than -98 dBc/Hz is experimentally generated. Also, the central frequency fc can be tuned in a certain range through adjusting fm and selecting matched Pm. PMID:27505789

  17. Experimental demonstration of directive Si3N4 optical leaky wave antennas with semiconductor perturbations at near infrared frequencies

    NASA Astrophysics Data System (ADS)

    Zhao, Qiancheng; Guclu, Caner; Huang, Yuwang; Campione, Salvatore; Capolino, Filippo; Boyraz, Ozdal

    2015-02-01

    Directive optical leaky wave antennas (OLWAs) with tunable radiation pattern are promising integrated optical modulation and scanning devices. OLWAs fabricated using CMOS-compatible semiconductor planar waveguide technology have the potential of providing high directivity with electrical tunability for modulation and switching capabilities. We experimentally demonstrate directive radiation from a silicon nitride (Si3N4) waveguide-based OLWA. The OLWA design comprises 50 crystalline Si perturbations buried inside the waveguide, with a period of 1 μm, each with a length of 260 nm and a height of 150 nm, leading to a directive radiation pattern at telecom wavelengths. The measured far-field radiation pattern at the wavelength of 1540 nm is very directive, with the maximum intensity at the angle of 84.4° relative to the waveguide axis and a half-power beam width around 6.2°, which is consistent with our theoretical predictions. The use of semiconductor perturbations facilitates electronic radiation control thanks to the refractive index variation induced by a carrier density change in the perturbations. To assess the electrical modulation capability, we study carrier injection and depletion in Si perturbations, and investigate the Franz-Keldysh effect in germanium as an alternative way. We theoretically show that the silicon wire modulator has a -3 dB modulation bandwidth of 75 GHz with refractive index change of 3×10-4 in depletion mode, and 350 MHz bandwidth with refractive index change of 1.5×10-2 in injection mode. The Franz-Keldysh effect has the potential to generate very fast modulation in radiation control at telecom wavelengths.

  18. Study of π-conjugation effect of organic semiconductors on their optical parameters

    NASA Astrophysics Data System (ADS)

    Ahmad, Zubair; Zafar, Qayyum; Touati, Farid; Shakoor, R. A.; Al-Thani, N. J.

    2016-04-01

    Metal free organic semiconductor "7,16-bis(3,3-dimethyl-3H-indol-2-yl)-5,14-dihydrodibenzo [b,i][1,4,8,11] tetraazacyclotetradecine" and metal free with extended π-conjugation organic semiconductor "8,19-bis(3,3-dimethyl-3H-indol-2-yl)-6,17-dihydrodinaphthol [2,3-b:2‧,3‧-i][1,4,8,11] tetraazacyclotetradecine have been synthesized and the effect of conjugation on their photovoltaic parameters have been investigated. The photo-physical study reveals band gaps of 2.61 eV for metal free and 2.16 eV for extended material. The HOMO/LUMO levels of the materials are calculated using cyclic voltammetry (CV) study. The open circuit voltages of metal free and extended materials in single layer photovoltaic cells are observed to be 0.72 and 0.73 under simulated solar light illumination (air mass 1.5 G, 100 mW/cm2), respectively. The short circuit current in the extended materials is found to be more than ∼1.5 times higher the metal free material.

  19. Theoretical Study of Triboelectric-Potential Gated/Driven Metal-Oxide-Semiconductor Field-Effect Transistor.

    PubMed

    Peng, Wenbo; Yu, Ruomeng; He, Yongning; Wang, Zhong Lin

    2016-04-26

    Triboelectric nanogenerator has drawn considerable attentions as a potential candidate for harvesting mechanical energies in our daily life. By utilizing the triboelectric potential generated through the coupling of contact electrification and electrostatic induction, the "tribotronics" has been introduced to tune/control the charge carrier transport behavior of silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET). Here, we perform a theoretical study of the performances of tribotronic MOSFET gated by triboelectric potential in two working modes through finite element analysis. The drain-source current dependence on contact-electrification generated triboelectric charges, gap separation distance, and externally applied bias are investigated. The in-depth physical mechanism of the tribotronic MOSFET operations is thoroughly illustrated by calculating and analyzing the charge transfer process, voltage relationship to gap separation distance, and electric potential distribution. Moreover, a tribotronic MOSFET working concept is proposed, simulated and studied for performing self-powered FET and logic operations. This work provides a deep understanding of working mechanisms and design guidance of tribotronic MOSFET for potential applications in micro/nanoelectromechanical systems (MEMS/NEMS), human-machine interface, flexible electronics, and self-powered active sensors.

  20. Theoretical Study of Triboelectric-Potential Gated/Driven Metal-Oxide-Semiconductor Field-Effect Transistor.

    PubMed

    Peng, Wenbo; Yu, Ruomeng; He, Yongning; Wang, Zhong Lin

    2016-04-26

    Triboelectric nanogenerator has drawn considerable attentions as a potential candidate for harvesting mechanical energies in our daily life. By utilizing the triboelectric potential generated through the coupling of contact electrification and electrostatic induction, the "tribotronics" has been introduced to tune/control the charge carrier transport behavior of silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET). Here, we perform a theoretical study of the performances of tribotronic MOSFET gated by triboelectric potential in two working modes through finite element analysis. The drain-source current dependence on contact-electrification generated triboelectric charges, gap separation distance, and externally applied bias are investigated. The in-depth physical mechanism of the tribotronic MOSFET operations is thoroughly illustrated by calculating and analyzing the charge transfer process, voltage relationship to gap separation distance, and electric potential distribution. Moreover, a tribotronic MOSFET working concept is proposed, simulated and studied for performing self-powered FET and logic operations. This work provides a deep understanding of working mechanisms and design guidance of tribotronic MOSFET for potential applications in micro/nanoelectromechanical systems (MEMS/NEMS), human-machine interface, flexible electronics, and self-powered active sensors. PMID:27077327

  1. Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho; Yu, Bong-Ahn

    2015-03-01

    We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.

  2. Optical coefficients in a semiconductor quantum ring: Electric field and donor impurity effects

    NASA Astrophysics Data System (ADS)

    Duque, C. M.; Acosta, Ruben E.; Morales, A. L.; Mora-Ramos, M. E.; Restrepo, R. L.; Ojeda, J. H.; Kasapoglu, E.; Duque, C. A.

    2016-10-01

    The electron states in a two-dimensional quantum dot ring are calculated in the presence of a donor impurity atom under the effective mass and parabolic band approximations. The effect of an externally applied electric field is also taken into account. The wavefunctions are obtained via the exact diagonalization of the problem Hamiltonian using a 2D expansion within the adiabatic approximation. The impurity-related optical response is analyzed via the optical absorption, relative refractive index change and the second harmonics generation. The dependencies of the electron states and these optical coefficients with the changes in the configuration of the quantum ring system are discussed in detail.

  3. Boron doping a semiconductor particle

    SciTech Connect

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  4. Boron doping a semiconductor particle

    SciTech Connect

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  5. Optical wafer metrology sensors for process-robust CD and overlay control in semiconductor device manufacturing

    NASA Astrophysics Data System (ADS)

    den Boef, Arie J.

    2016-06-01

    This paper presents three optical wafer metrology sensors that are used in lithography for robustly measuring the shape and position of wafers and device patterns on these wafers. The first two sensors are a level sensor and an alignment sensor that measure, respectively, a wafer height map and a wafer position before a new pattern is printed on the wafer. The third sensor is an optical scatterometer that measures critical dimension-variations and overlay after the resist has been exposed and developed. These sensors have different optical concepts but they share the same challenge that sub-nm precision is required at high throughput on a large variety of processed wafers and in the presence of unknown wafer processing variations. It is the purpose of this paper to explain these challenges in more detail and give an overview of the various solutions that have been introduced over the years to come to process-robust optical wafer metrology.

  6. Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance

    NASA Astrophysics Data System (ADS)

    Park, Jongwoon; Kawakami, Yoichi; Li, Xun; Huang, Wei-Ping

    2006-11-01

    One of the key differences of a semiconductor optical amplifier (SOA) with internal lasing oscillation (ILO) from a SOA with external light injection (ELI) lies in a carrier-sharing mechanism. Since the internal lasing mode shares the same pool of carriers with the signals, the carriers (or photons) withdrawn from the circulating laser mode speed up the gain recovery. On the other hand, the external light injected into the SOA shortens the carrier recovery time through optical pumping without any carrier sharing involved. To find out a better scheme, we have made a comparative investigation on the effects of the ILO and ELI on the SOA performance. It turns out by way of simulation that the ELI scheme provides faster gain recovery, shorter carrier lifetime, and higher saturation power when the external injection power is higher than the internal lasing power. The performance enhancement is not so pronounced with the carrier-sharing mechanism, as the internal lasing mode itself gives rise to severe longitudinal spatial hole burning (LSHB). Nevertheless, the ILO scheme is preferable for linear-amplification applications. We also examine the use of the ELI for low-crosstalk optical amplifiers. It is found that the ELI scheme does not bring in a very strong resonance peak in the crosstalk, which appears in a SOA with ILO due to relaxation oscillations of the lasing mode. In comparison to the ILO in SOAs, the ELI into SOAs is likely to leave more optical gain for multi-channel amplification without any sacrifice on the crosstalk.

  7. Recent network sensing based on a combination of single mode fiber optics and semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Watanabe, Kazuhiro

    2007-05-01

    This paper describes the overview of the past decade's progress of network sensing supported by the use of single mode fiber optics in which glass fiber material itself exhibits sensing function, comparing with conventional FBG/BOTDR techniques, and newly developed hetero-core techniques. The hetero-core fiber optic sensor has been highlighted in terms of the fabrication process, the sensing mechanism and characteristics, and a road map toward commercialization to the variety of industrial applications.

  8. Goldstone mode of optical parametric oscillators in planar semiconductor microcavities in the strong-coupling regime

    SciTech Connect

    Wouters, Michiel; Carusotto, Iacopo

    2007-10-15

    We propose an experimental setup to probe the low-lying excitation modes of a parametrically oscillating planar cavity, in particular the soft Goldstone mode which appears as a consequence of the spontaneously broken U(1) symmetry of signal-idler phase rotations. A strong and narrow peak corresponding to the Goldstone mode is identified in the transmission spectrum of a weak probe beam incident on the cavity. When the U(1) symmetry is explicitly broken by an additional laser beam pinning the signal-idler phase, a gap opens in the dispersion and the Goldstone peak is dramatically suppressed. Quantitative predictions are given for the case of semiconductor planar cavities in the strong exciton-photon coupling regime.

  9. Structural and optical properties of thin films of Cu(In,Ga)Se2 semiconductor compounds

    NASA Astrophysics Data System (ADS)

    Mudryi, A. V.; Gremenok, V. F.; Karotki, A. V.; Zalesski, V. B.; Yakushev, M. V.; Luckert, F.; Martin, R.

    2010-07-01

    The chemical composition of Cu(In,Ga)Se2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap Eg for this material in the 1.05-1.72 eV spectral range at 4.2 K.

  10. Comparison of the optical responses of O-poor and O-rich thermochromic VOX films during semiconductor-to-metal transition

    NASA Astrophysics Data System (ADS)

    Luo, Zhenfei; Wu, Zhiming; Wang, Tao; Xu, Xiangdong; Li, Weizhi; Li, Wei; Jiang, Yadong

    2012-09-01

    O-poor and O-rich thermochromic vanadium oxide (VOX) nanostructured thin films were prepared by applying reactive direct current magnetron sputtering and post-annealing in oxygen ambient. UV-visible spectrophotometer and spectroscopic ellipsometry were used to investigate the optical properties of films. It was found that, when the O-poor VOX thin film underwent semiconductor-to-metal transition, the values of optical conductivity and extinction coefficient in the visible region increased due to the existence of occupied band-gap states. This noticeable feature, however, was not observed for the O-rich film, which showed a similar optical behavior with the stoichiometric crystalline VO2 films reported in the literatures. Moreover, the O-poor VOX film exhibits consistent variations of transmission values in the visible/near-infrared region when it undergoes semiconductor-to-metal transition.

  11. Ultrahigh supermode noise suppressing ratio of a semiconductor optical amplifier filtered harmonically mode-locked Erbium-doped fiber laser.

    PubMed

    Lin, Gong-Ru; Wu, Ming-Chung; Chang, Yung-Cheng; Pan, Ci-Ling

    2005-09-01

    The supermode noise suppressing ratio (SMSR) and the phase noise of a harmonically mode-locked Erbium-doped fiber laser (HML-EDFL) with an intra-cavity semiconductor optical amplifier (SOA) and an optical band-pass filter (OBPF) are improved and compared with a state-of-the-art Fabry-Perot laser diode (FPLD) injection-mode-locked EDFL. By driving the intra-cavity SOA based high-pass filter at unitary gain condition, the SMSR of the HML-EDFL is enhanced to 82 dB at the cost of degrading phase noise, increasing jitter, and broadened pulse width. The adding of OBPF further improves the SMSR, pulse width, phase noise, and jitter of the SOA-filtered HML-EDFL to 90 dB, 42 ps, -112 dBc/Hz, and 0.7 ps, respectively. The ultrahigh SMSR of the SOA-filtered HML-EDFL can compete with that of the FPLD injection-mode-locked EDFL without sacrificing its pulse width and jitter performances. PMID:19498744

  12. X-ray-excited optical luminescence of impurity atom in semiconductor.

    PubMed

    Ishii, M; Tanaka, Y; Komuro, S; Morikawa, T; Aoyagi, Y; Ishikawa, T

    2001-03-01

    We observed the x-ray-excited optical luminescence (XEOL) of erbium-doped silicon (Si:Er) thin films to make a site-selective x-ray absorption fine structure (XAFS) measurement of an optically active Er atom. The undulator beam was used for the increment of the electron population in the excited state, and following XEOL at an infrared wavelength of 1.54 microm with minimum absorption loss in the host Si was detected. The edge-jump and XAFS oscillation were successfully obtained at the Er L(III)-edge. This spectrum originated from inner-shell excitation and relaxation of only the optically active Er atom, indicating that site-selectivity at an atomic level was achieved.

  13. Fiber-optic temperature sensor using a spectrum-modulating semiconductor etalon

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn; Fritsch, Klaus; Anthan, Donald J.

    1988-01-01

    Described is a fiber-optic temperature sensor that uses a spectrum modulating SiC etalon. The spectral output of this type of sensor may be analyzed to obtain a temperature measurement which is largely independent of the transmission properties of the sensor's fiber-optic link. A highly precise laboratory spectrometer is described in detail, and this instrument is used to study the properties of this type of sensor. Also described are a number of different spectrum analyzers that are more suitable for use in a practical thermometer.

  14. Fiber-optic temperature sensor using a spectrum-modulating semiconductor etalon

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn; Anthan, Donald J.; Beheim, Glenn; Anthan, Donald J.

    1987-01-01

    Described is a fiber-optic temperature sensor that uses a spectrum modulating SiC etalon. The spectral output of this type of sensor may be analyzed to obtain a temperature measurement which is largely independent of the transmission properties of the sensor's fiber-optic link. A highly precise laboratory spectrometer is described in detail, and this instrument is used to study the properties of this type of sensor. Also described are a number of different spectrum analyzers that are more suitable for use in a practical thermometer.

  15. Magnons and Phonons Optically Driven out of Local Equilibrium in a Magnetic Insulator.

    PubMed

    An, Kyongmo; Olsson, Kevin S; Weathers, Annie; Sullivan, Sean; Chen, Xi; Li, Xiang; Marshall, Luke G; Ma, Xin; Klimovich, Nikita; Zhou, Jianshi; Shi, Li; Li, Xiaoqin

    2016-09-01

    The coupling and possible nonequilibrium between magnons and other energy carriers have been used to explain several recently discovered thermally driven spin transport and energy conversion phenomena. Here, we report experiments in which local nonequilibrium between magnons and phonons in a single crystalline bulk magnetic insulator, Y_{3}Fe_{5}O_{12}, has been created optically within a focused laser spot and probed directly via micro-Brillouin light scattering. Through analyzing the deviation in the magnon number density from the local equilibrium value, we obtain the diffusion length of thermal magnons. By explicitly establishing and observing local nonequilibrium between magnons and phonons, our studies represent an important step toward a quantitative understanding of various spin-heat coupling phenomena. PMID:27636490

  16. Magnons and Phonons Optically Driven out of Local Equilibrium in a Magnetic Insulator

    NASA Astrophysics Data System (ADS)

    An, Kyongmo; Olsson, Kevin S.; Weathers, Annie; Sullivan, Sean; Chen, Xi; Li, Xiang; Marshall, Luke G.; Ma, Xin; Klimovich, Nikita; Zhou, Jianshi; Shi, Li; Li, Xiaoqin

    2016-09-01

    The coupling and possible nonequilibrium between magnons and other energy carriers have been used to explain several recently discovered thermally driven spin transport and energy conversion phenomena. Here, we report experiments in which local nonequilibrium between magnons and phonons in a single crystalline bulk magnetic insulator, Y3Fe5O12 , has been created optically within a focused laser spot and probed directly via micro-Brillouin light scattering. Through analyzing the deviation in the magnon number density from the local equilibrium value, we obtain the diffusion length of thermal magnons. By explicitly establishing and observing local nonequilibrium between magnons and phonons, our studies represent an important step toward a quantitative understanding of various spin-heat coupling phenomena.

  17. Towards optical polarization control of laser-driven proton acceleration in foils undergoing relativistic transparency

    PubMed Central

    Gonzalez-Izquierdo, Bruno; King, Martin; Gray, Ross J.; Wilson, Robbie; Dance, Rachel J.; Powell, Haydn; Maclellan, David A.; McCreadie, John; Butler, Nicholas M. H.; Hawkes, Steve; Green, James S.; Murphy, Chris D.; Stockhausen, Luca C.; Carroll, David C.; Booth, Nicola; Scott, Graeme G.; Borghesi, Marco; Neely, David; McKenna, Paul

    2016-01-01

    Control of the collective response of plasma particles to intense laser light is intrinsic to relativistic optics, the development of compact laser-driven particle and radiation sources, as well as investigations of some laboratory astrophysics phenomena. We recently demonstrated that a relativistic plasma aperture produced in an ultra-thin foil at the focus of intense laser radiation can induce diffraction, enabling polarization-based control of the collective motion of plasma electrons. Here we show that under these conditions the electron dynamics are mapped into the beam of protons accelerated via strong charge-separation-induced electrostatic fields. It is demonstrated experimentally and numerically via 3D particle-in-cell simulations that the degree of ellipticity of the laser polarization strongly influences the spatial-intensity distribution of the beam of multi-MeV protons. The influence on both sheath-accelerated and radiation pressure-accelerated protons is investigated. This approach opens up a potential new route to control laser-driven ion sources. PMID:27624920

  18. Towards optical polarization control of laser-driven proton acceleration in foils undergoing relativistic transparency.

    PubMed

    Gonzalez-Izquierdo, Bruno; King, Martin; Gray, Ross J; Wilson, Robbie; Dance, Rachel J; Powell, Haydn; Maclellan, David A; McCreadie, John; Butler, Nicholas M H; Hawkes, Steve; Green, James S; Murphy, Chris D; Stockhausen, Luca C; Carroll, David C; Booth, Nicola; Scott, Graeme G; Borghesi, Marco; Neely, David; McKenna, Paul

    2016-01-01

    Control of the collective response of plasma particles to intense laser light is intrinsic to relativistic optics, the development of compact laser-driven particle and radiation sources, as well as investigations of some laboratory astrophysics phenomena. We recently demonstrated that a relativistic plasma aperture produced in an ultra-thin foil at the focus of intense laser radiation can induce diffraction, enabling polarization-based control of the collective motion of plasma electrons. Here we show that under these conditions the electron dynamics are mapped into the beam of protons accelerated via strong charge-separation-induced electrostatic fields. It is demonstrated experimentally and numerically via 3D particle-in-cell simulations that the degree of ellipticity of the laser polarization strongly influences the spatial-intensity distribution of the beam of multi-MeV protons. The influence on both sheath-accelerated and radiation pressure-accelerated protons is investigated. This approach opens up a potential new route to control laser-driven ion sources. PMID:27624920

  19. Towards optical polarization control of laser-driven proton acceleration in foils undergoing relativistic transparency

    NASA Astrophysics Data System (ADS)

    Gonzalez-Izquierdo, Bruno; King, Martin; Gray, Ross J.; Wilson, Robbie; Dance, Rachel J.; Powell, Haydn; MacLellan, David A.; McCreadie, John; Butler, Nicholas M. H.; Hawkes, Steve; Green, James S.; Murphy, Chris D.; Stockhausen, Luca C.; Carroll, David C.; Booth, Nicola; Scott, Graeme G.; Borghesi, Marco; Neely, David; McKenna, Paul

    2016-09-01

    Control of the collective response of plasma particles to intense laser light is intrinsic to relativistic optics, the development of compact laser-driven particle and radiation sources, as well as investigations of some laboratory astrophysics phenomena. We recently demonstrated that a relativistic plasma aperture produced in an ultra-thin foil at the focus of intense laser radiation can induce diffraction, enabling polarization-based control of the collective motion of plasma electrons. Here we show that under these conditions the electron dynamics are mapped into the beam of protons accelerated via strong charge-separation-induced electrostatic fields. It is demonstrated experimentally and numerically via 3D particle-in-cell simulations that the degree of ellipticity of the laser polarization strongly influences the spatial-intensity distribution of the beam of multi-MeV protons. The influence on both sheath-accelerated and radiation pressure-accelerated protons is investigated. This approach opens up a potential new route to control laser-driven ion sources.

  20. Metal colloids and semiconductor quantum dots: Linear and nonlinear optical properties

    NASA Astrophysics Data System (ADS)

    Henderson, D. O.; My, R.; Tung, Y.; Ueda, A.; Zhu, J.; Collins, W. E.; Hall, Christopher

    1995-08-01

    One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantion for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. In general the host material is typically a glass such as optical grade silica. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga and As. An emphasis is placed on host guest interactions between the matrix and the implanted ion and how the matrix effects and implantation parameters can be used to obtain designer level optical devices tailored for specific applications. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. In this part of the program, we are particularly interested in characterizing the thermodynamic and optical properties of these non-composite materials. We also address how phase diagram of the confined material is altered by the interfacial properties between the confined material and the pore wall.

  1. Metal colloids and semiconductor quantum dots: Linear and nonlinear optical properties

    NASA Technical Reports Server (NTRS)

    Henderson, D. O.; My, R.; Tung, Y.; Ueda, A.; Zhu, J.; Collins, W. E.; Hall, Christopher

    1995-01-01

    One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantion for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. In general the host material is typically a glass such as optical grade silica. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga and As. An emphasis is placed on host guest interactions between the matrix and the implanted ion and how the matrix effects and implantation parameters can be used to obtain designer level optical devices tailored for specific applications. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. In this part of the program, we are particularly interested in characterizing the thermodynamic and optical properties of these non-composite materials. We also address how phase diagram of the confined material is altered by the interfacial properties between the confined material and the pore wall.

  2. Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.

    2000-03-02

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity.

  3. T-matrix analysis of biexcitonic correlations in the nonlinear optical response of semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Takayama, R.; Kwong, N. H.; Rumyantsev, I.; Kuwata-Gonokami, M.; Binder, R.

    2002-02-01

    A detailed numerical analysis of exciton-exciton interactions in semiconductor quantum wells is presented. The theory is based on the dynamics-controlled truncation formalism and evaluated for the case of resonant excitation of 1s-heavy-hole excitons. It is formulated in terms of standard concepts of scattering theory, such as the forward-scattering amplitude (or T-matrix). The numerical diagonalization of the exciton-exciton interaction matrix in the 1s-approximation yields the excitonic T-matrix. We discuss the role of the direct and exchange interaction in the effective two-exciton Hamiltonian, which determines the T-matrix, evaluated within the 1s-subspace, and also analyze the effects of the excitonic wave function overlap matrix. Inclusion of the latter is shown to effectively prevent the 1s-approximation from making the Hamiltonian non-hermitian, but a critical discussion shows that other artefacts may be avoided by not including the overlap matrix. We also present a detailed analysis of the correspondence between the excitonic T-matrix in the 1s-approximation and the well-known T-matrix governing two-particle interactions in two dimensional systems via short-range potentials.

  4. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  5. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    Baca, A.G.; Brown, D.J.; Donaldson, R.D.; Helgeson, W.D.; Hjalmarson, H.P.; Loubriel, G.M.; Mar, A.; O'Malley, M.W.; Thornton, R.L.; Zutavern, F.J.

    1999-08-05

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approximately}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  6. Development and Application of Explicitly Correlated Wave Function Based Methods for the Investigation of Optical Properties of Semiconductor Nanomaterials

    NASA Astrophysics Data System (ADS)

    Elward, Jennifer Mary

    Semiconductor nanoparticles, or quantum dots (QDs), are well known to have very unique optical and electronic properties. These properties can be controlled and tailored as a function of several influential factors, including but not limited to the particle size and shape, effect of composition and heterojunction as well as the effect of ligand on the particle surface. This customizable nature leads to extensive experimental and theoretical research on the capabilities of these quantum dots for many application purposes. However, in order to be able to understand and thus further the development of these materials, one must first understand the fundamental interaction within these nanoparticles. In this thesis, I have developed a theoretical method which is called electron-hole explicitly correlated Hartee-Fock (eh-XCHF). It is a variational method for solving the electron-hole Schrodinger equation and has been used in this work to study electron-hole interaction in semiconductor quantum dots. The method was benchmarked with respect to a parabolic quantum dot system, and ground state energy and electron-hole recombination probability were computed. Both of these properties were found to be in good agreement with expected results. Upon successful benchmarking, I have applied the eh-XCHF method to study optical properties of several quantum dot systems including the effect of dot size on exciton binding energy and recombination probability in a CdSe quantum dot, the effect of shape on a CdSe quantum dot, the effect of heterojunction on a CdSe/ZnS quantum dot and the effect of quantum dot-biomolecule interaction within a CdSe-firefly Luciferase protein conjugate system. As metrics for assessing the effect of these influencers on the electron-hole interaction, the exciton binding energy, electron-hole recombination probability and the average electron-hole separation distance have been computed. These excitonic properties have been found to be strongly infuenced by the

  7. Characterisation of optically driven microstructures for manipulating single DNA molecules under a fluorescence microscope.

    PubMed

    Terao, Kyohei; Masuda, Chihiro; Inukai, Ryo; Gel, Murat; Oana, Hidehiro; Washizu, Masao; Suzuki, Takaaki; Takao, Hidekuni; Shimokawa, Fusao; Oohira, Fumikazu

    2016-06-01

    Optical tweezers are powerful tools for manipulating single DNA molecules using fluorescence microscopy, particularly in nanotechnology-based DNA analysis. We previously proposed a manipulation technique using microstructures driven by optical tweezers that allows the handling of single giant DNA molecules of millimetre length that cannot be manipulated by conventional techniques. To further develop this technique, the authors characterised the microstructures quantitatively from the view point of fabrication and efficiency of DNA manipulation under a fluorescence microscope. The success rate and precision of the fabrications were evaluated. The results indicate that the microstructures are obtained in an aqueous solution with a precision ∼50 nm at concentrations in the order of 10(6) particles/ml. The visibility of these microstructures under a fluorescence microscope was also characterised, along with the elucidation of the fabrication parameters needed to fine tune visibility. Manipulating yeast chromosomal DNA molecules with the microstructures illustrated the relationship between the efficiency of manipulation and the geometrical shape of the microstructure. This report provides the guidelines for designing microstructures used in single DNA molecule analysis based on on-site DNA manipulation, and is expected to broaden the applications of this technique in the future.

  8. Temperature driven evolution of thermal, electrical, and optical properties of Ti–Al–N coatings

    PubMed Central

    Rachbauer, Richard; Gengler, Jamie J.; Voevodin, Andrey A.; Resch, Katharina; Mayrhofer, Paul H.

    2012-01-01

    Monolithic single phase cubic (c) Ti1−xAlxN thin films are used in various industrial applications due to their high thermal stability, which beneficially effects lifetime and performance of cutting and milling tools, but also find increasing utilization in electronic and optical devices. The present study elucidates the temperature-driven evolution of heat conductivity, electrical resistivity and optical reflectance from room temperature up to 1400 °C and links them to structural and chemical changes in Ti1−xAlxN coatings. It is shown that various decomposition phenomena, involving recovery and spinodal decomposition (known to account for the age hardening phenomenon in c-Ti1−xAlxN), as well as the cubic to wurtzite phase transformation of spinodally formed AlN-enriched domains, effectively increase the thermal conductivity of the coatings from ∼3.8 W m−1 K−1 by a factor of three, while the electrical resistivity is reduced by one order of magnitude. A change in the coating color from metallic grey after deposition to reddish-golden after annealing to 1400 °C is related to the film structure and discussed in terms of film reflectivity. PMID:23482424

  9. Dynamic saturation in Semiconductor Optical Amplifiers: accurate model, role of carrier density, and slow light.

    PubMed

    Berger, Perrine; Alouini, Mehdi; Bourderionnet, Jérôme; Bretenaker, Fabien; Dolfi, Daniel

    2010-01-18

    We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.

  10. Nonlinear dynamics in a semiconductor laser subject to filtered phase-conjugate optical feedback

    NASA Astrophysics Data System (ADS)

    Weicker, Lionel; Erneux, Thomas; Wolfersberger, Delphine; Sciamanna, Marc

    2016-04-01

    We study both analytically and numerically the rate equations of a laser diode subject to a filtered phase-conjugate optical feedback (FPCF). We formulate dimensionless equations for the FPCF and determine the Hopf bifurcation conditions. The coalescence of different Hopf bifurcations as the filter width decreases suggests the disappearance of the external cavity modes for a narrow width. We confirm our analytical predictions with direct numerical simulations of the FPCF equations.

  11. Effect of surface ligands on optical and electronic spectra of semiconductor nanoclusters.

    PubMed

    Kilina, Svetlana; Ivanov, Sergei; Tretiak, Sergei

    2009-06-10

    We investigate the impact of ligands on the morphology, electronic structure, and optical response of the Cd(33)Se(33) cluster, which overlaps in size with the smallest synthesized CdSe nanocrystal quantum dots (QDs). Our density functional theory calculations demonstrate significant surface reorganization for both the bare cluster and the cluster capped with amine or phosphine oxide model ligands. We observe strong surface-ligand interactions leading to substantial charge redistribution and polarization effects on the surface. These effects result in the development of hybridized states, for which the electronic density is spread over the cluster and the ligands. The loss of one of the passivating ligands leads to either optically dark or bright additional states inside of the band gap, depending on the position of the leaving ligand on the QD surface. However, for fully ligated QDs, neither the ligand-localized nor hybridized molecular orbitals appear as trap states inside or near the band gap of the QD. Instead, being mostly optically dark, dense hybridized states could open new relaxation channels for high-energy photoexcitations. Comparing QDs passivated by different ligands, we also found that hybridized states are denser at the edge of the conduction band of the cluster ligated with phosphine oxide molecules than that with primary amines. Such a different manifestation of ligand binding may potentially lead to faster electron relaxation in QDs passivated by phosphine oxide than by amine ligands. PMID:19425603

  12. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    NASA Astrophysics Data System (ADS)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  13. Structural and optical characterization of group III-nitride compound semiconductors

    NASA Astrophysics Data System (ADS)

    Senawiratne, Jayantha

    The structural properties of the group III-nitrides including AlN, Ga 1-xMnxN, GaN:Cu, and InN were investigated by Raman spectroscopy. Absorption and photoluminescence spectroscopy were utilized to study the optical properties in these materials. The analysis of physical vapor transport grown AlN single crystals showed that oxygen, carbon, silicon, and boron are the major impurities in the bulk AlN. The Raman analysis revealed high crystalline quality and well oriented AlN single crystals. The absorption coefficient of AlN single crystals were assessed in the spectral range from deep UV to the FIR. The absorption and photoluminescence analysis indicate that, in addition to oxygen, carbon, boron, and silicon, contribute to the optical properties of bulk AlN crystals. In situ Cu-doped GaN epilayers with Cu concentrations in the range of 2x1016 cm-3 - 5x10 17 cm-3, grown on sapphire substrate by metal organic chemical vapor deposition, were investigated by Raman and photoluminescence (PL) spectroscopy. The Raman study revealed high crystalline GaN:Cu layers with minimal damage to the hexagonal lattice structure due to the Cu incorporation. A strong Cu related emission band at 2.4 eV was assigned to Cu induced optical transitions between deep Cu states and shallow residual donor states. Compensation of Cu states by residual donors and poor activation probability of deep Cu states are responsible for semi-insulating electrical conductivity. Ferromagnetic Ga1-xMnxN epilayers, grown by MOCVD with Mn concentration from x = 0 to x = 1.5, were optically investigated by Raman, PL, and transmission spectroscopy. The Raman studies revealed Mn-related Raman peaks at 300 cm-1, 609 cm-1, and 669 cm -1. Mn-related absorption and emission bands in Ga1-xMn xN were observed at 1.5 eV and 3.0 eV, respectively. The structural properties of InN layers, grown by high pressure-CVD with different free carrier concentrations, were analyzed by Raman spectroscopy. The Raman results show that

  14. Probing charge and energy transfer process at the donor-acceptor interface of semiconductor nanostructures with simultaneous photocurrent-optical microscopy

    NASA Astrophysics Data System (ADS)

    Gao, Yongqian; Acharya, Krishna; Galande, Charudatta; Ajayan, Pulickel; Mohite, Aditya; Dattelbaum, Andrew; Hollingsworth, Jennifer; Htoon, Han; Los Alamos Natioal Lab Team; Rice Univerisity Collaboration

    2013-03-01

    Understanding and control of charge and energy transfer (CT & ET) processes happening at the donor-acceptor interface of colloidal semiconductor nanostructures play a critical role in defining the performance of many exploratory photo-voltaic devices. Ultrafast dynamics of CT and ET processes in semiconductor nanostrucutres can be investigated effectively by time and energy resolved PL spectroscopy. However a full understanding on impact of these process on device performance demand direct correlation of these dynamical measurements with photocurrent measurements that probe the separation and transport of charges. To this end we develop simultaneous optical and electrical characterization approaches capable of performing scanning photocurrent microscopy and various single nanostructure optical spectroscopies (e.g. photoluminescence (PL), Raman, time resolved PL) simultaneously. We will present application of this technique on various donor/acceptor interfaces including graphene oxide/CdSe nanowire and TiO2 nanocrystals/CdSe nanowire interfaces.

  15. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  16. Wideband 360 degrees microwave photonic phase shifter based on slow light in semiconductor optical amplifiers.

    PubMed

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2010-03-15

    In this work we demonstrate for the first time, to the best of our knowledge, a continuously tunable 360 degrees microwave phase shifter spanning a microwave bandwidth of several tens of GHz (up to 40 GHz). The proposed device exploits the phenomenon of coherent population oscillations, enhanced by optical filtering, in combination with a regeneration stage realized by four-wave mixing effects. This combination provides scalability: three hybrid stages are demonstrated but the technology allows an all-integrated device. The microwave operation frequency limitations of the suggested technique, dictated by the underlying physics, are also analyzed.

  17. Coupling semiconductor lasers into single-mode optical fibers by use of tips grown by photopolymerization.

    PubMed

    Bachelot, Renaud; Fares, Abdesslame; Fikri, Radouane; Barchiesi, Dominique; Lerondel, Gilles; Royer, Pascal

    2004-09-01

    We show that a polymer tip, integrated by free-radical photopolymerization at the end of a telecommunication optical fiber, allows high-efficiency coupling between the fiber and an infrared laser diode. A coupling efficiency of 70% (1.5-dB loss) was achieved. We obtained this result by controlling the radius of curvature of the tip, the origin of which is discussed in terms of the photochemical influence of oxygen during tip formation. The experimental data were found to be in agreement with results of electromagnetic calculations based on the finite-element method.

  18. Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.

    2005-07-01

    Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.

  19. L-asparagine crystals with wide gap semiconductor features: Optical absorption measurements and density functional theory computations

    SciTech Connect

    Zanatta, G.; Gottfried, C.; Silva, A. M.; Caetano, E. W. S.; Sales, F. A. M.; Freire, V. N.

    2014-03-28

    Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences Δa, Δb, Δc between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z → Γ and Z → β transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to α3 → Γ, α1 → Γ, and α2 → Γ transitions, respectively. Δ-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p–carboxyl, C 2p–side chain, and C 2p–carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical

  20. L-Asparagine crystals with wide gap semiconductor features: optical absorption measurements and density functional theory computations.

    PubMed

    Zanatta, G; Gottfried, C; Silva, A M; Caetano, E W S; Sales, F A M; Freire, V N

    2014-03-28

    Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences Δa, Δb, Δc between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z → Γ and Z → β transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to α3 → Γ, α1 → Γ, and α2 → Γ transitions, respectively. Δ-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p-carboxyl, C 2p-side chain, and C 2p-carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical

  1. Timing jitter of passively-mode-locked semiconductor lasers subject to optical feedback: A semi-analytic approach

    NASA Astrophysics Data System (ADS)

    Jaurigue, Lina; Pimenov, Alexander; Rachinskii, Dmitrii; Schöll, Eckehard; Lüdge, Kathy; Vladimirov, Andrei G.

    2015-11-01

    We study the effect of delayed coherent optical feedback on the pulse timing jitter in passively-mode-locked semiconductor lasers with the help of a semi-analytical method which we develop to calculate the timing fluctuations in these lasers. Through the proposed method physical insights into the feedback dependence of the timing jitter are gained and the greatly reduced computation times allow for the investigation of the dependence of timing fluctuations over greater parameter domains. We show that resonant feedback leads to a reduction in the timing jitter and that a frequency-pulling region forms about the main resonances, within which a timing jitter reduction is observed. The width of these frequency-pulling regions increases linearly with short feedback delay times. We derive an analytic expression for the timing jitter, which predicts a monotonic decrease in the timing jitter for resonant feedback of increasing delay lengths, when timing jitter effects are fully separated from amplitude jitter effects. For long feedback cavities the decrease in timing jitter scales approximately as 1 /τ with increasing feedback delay time τ . This behavior is not related to the stability of the system but is instead due to the influence of the noise, on the timing jitter, being reduced since the solution space is larger for increasing τ .

  2. Time-domain simulation of channel crosstalk and inter-modulation distortion in gain-clamped semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Li, Xun; Park, Jongwoon

    2006-07-01

    A time-domain model is implemented for gain-clamped semiconductor optical amplifiers (GC-SOAs) based on a combination of the separated traveling-wave equations and effective Bloch equations. The key feature of this model lies in its capability of handling the lasing-signal, signal-signal, and signal-noise interactions over a broad wavelength band. Therefore, various nonlinear phenomena such as the cross-gain saturation (XGS) and nondegenerate four-wave mixing (ND-FWM) can readily be captured. After being implemented and validated, this model is applied to the simulation of GC-SOA dynamic behaviors such as the channel crosstalk and intermodulation distortion (IMD). Simulation results show that the third-order IMD can be effectively suppressed by a gain-clamping lasing mode in GC-SOAs in comparison with that in conventional SOAs. The channel crosstalk can also be suppressed to some extent in GC-SOAs, but not as effectively. Other than a homogeneous reduction, the gain-clamping in GC-SOAs does not change the dependence of the channel crosstalk and IMD on the input signal power and channel spacing. It is also shown that the channel crosstalk, unlike the IMD, cannot be efficiently reduced by enlarging the channel spacing even in GC-SOAs.

  3. Stability near threshold in a semiconductor laser subject to optical feedback: a bifurcation analysis of the Lang-Kobayashi equations.

    PubMed

    Green, Kirk

    2009-03-01

    Through the use of analytical and numerical techniques, we investigate the interaction between the trivial off-state and the continuous-wave (CW) operation of a semiconductor laser subject to conventional optical feedback. More specifically, using numerical continuation tools, the stability and bifurcations of the CW states, or external-cavity modes (ECMs), are analyzed in dependence on the parameters of feedback phase, feedback strength, pump current, and the linewidth enhancement factor. In this way, curves of codimension-one Hopf bifurcations are shown to destabilize the off-state and lead to stable ECM operation. Moreover, self-intersections of these Hopf curves in codimension-two Hopf-Hopf bifurcation points are seen to give rise to curves of codimension-one torus bifurcations (Hopf bifurcations of the ECMs), and degenerate-Hopf points to the birth of saddle-node bifurcations of the ECMs, as parameters are varied. These codimension-two points are shown to come together at a codimension-three degenerate Hopf-Hopf point (a Bogdanov-Takens bifurcation of the ECMs): a limiting point for which a stable off-state can exist.

  4. Variations of operations and noise of semiconductor lasers subject to optical feedback with nonlinear gain and nonradiative recombination

    SciTech Connect

    Abdulrhmann, S.; Al-Hossain, A.

    2015-03-30

    Influence of the nonlinear gain (NLG) and nonradiative recombination life time ratio (NRRLTR) on the rout to chaos and noise characteristics of semiconductor lasers (SLs) subject to optical feedback (OFB) are investigated. The analyses are performed in terms of the temporal trajectory of the photon numbers, bifurcation diagrams and relative intensity noise (RIN). Variations of the fluctuations of the photon number are statistically analyzed. The corresponding frequency dependence of RIN is characterized. The simulation results show that, NLG and NRRLTR can cause significant changes in the rout to chaos of the SLs and probability distribution of the photon numbers. We found that the value of the OFB rate at which the transition from CW to periodic oscillation (PO) or chaos state occur increases, as the value of the NLG/ NRRLTR is increased/decreased. The RIN is found to be suppressed when the laser is operated in CW or PO region and at relatively higher/lower values of the NLG/NRRLTR. We believe that, the instability of the SLs can be reduced by operating it under OFB and by increasing/decreasing the values of the NLG/NRRLTR parameter.

  5. Momentum Transfer Studies and Studies of Linear and Nonlinear Optical Properties of Metal Colloids and Semiconductor Quantum Dots

    NASA Technical Reports Server (NTRS)

    Collins, W. E.; Burger, A.; Dyer, K.; George, M.; Henderson, D.; Morgan, S.; Mu, R.; Shi, D.; Conner, D; Thompson, E.; Collins, L.; Curry, L.; Mattox, S.; Williams, G.

    1996-01-01

    Phase 1 of this work involved design work on a momentum transfer device. The progress on design and testing will be presented. Phase 2 involved the systematic study of the MPD thruster for dual uses. Though it was designed as a thruster for space vehicles, the characteristics of the plasma make it an excellent candidate for industrial applications. This project sought to characterize the system for use in materials processing and characterization. The surface modification on ZnCdTe, CdTe, and ZnTe will be presented. Phase 3 involved metal colloids and semiconductor quantum dots. One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantation for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga, and As. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb, and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. The results of some of this work will also be reported.

  6. Scissors implementation within length-gauge formulations of the frequency-dependent nonlinear optical response of semiconductors

    NASA Astrophysics Data System (ADS)

    Nastos, F.; Olejnik, B.; Schwarz, K.; Sipe, J. E.

    2005-07-01

    We show that previous calculations of the nonlinear optical response of semiconductors using the “length-gauge” approach of Aversa and Sipe[Phys. Rev. B 52, 14636 (1995)] have incorrectly implemented the scissors correction. Previous calculations have first modified the expressions such that the crystal momentum position operator interband matrix elements rnma(k) and their generalized k -derivatives rnm;ba(k) are written in terms of the local density approximation (LDA) momentum matrix elements and energy eigenvalues, which are then adjusted to account for the scissors correction. This method is incorrect as it violates specific sum rules. We give a consistent implementation that respects the sum rules: rnma(k) and rnm;ba(k) , when written in terms of momentum matrix elements and energy eigenvalues, should be evaluated within Kohn-Sham LDA and not with the scissored one. Calculated spectra via full potential augmented plane wave plus local orbital band structures for the second-harmonic generation tensor χ2xyz(-2ω;ω,ω) show that the errors in previous calculations are approximately 39% and 28% for GaAs and GaP, respectively.

  7. Speckle noise reduction of a dual-frequency laser Doppler velocimeter based on an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    Cheng, Chih-Hao; Lee, Jia-Wei; Lin, Tze-Wei; Lin, Fan-Yi

    2012-02-01

    We develop and investigate a dual-frequency Laser Doppler Velocimeter (DF-LDV) based on an optically injected semiconductor laser. By operating the laser in a period-one oscillation (P1) state, the laser can emit light with two coherent frequency components separated by about 11.25 GHz. Through optical heterodyning, the velocity of the target can be determined from the Doppler shift of the beat signal of the dual-frequency light. While the DF-LDV has the same advantages of good directionality and high intensity as in the conventional singlefrequency LDV (SF-LDV), having an effective wavelength in the range of microwave in the beat signal greatly reduces the speckle noise caused by the random phase modulation from the rough surface of the moving target. To demonstrate the speckle noise reduction, the Doppler shifted signals from a moving target covered by the plain paper are measured both from the SF-LDV and the DF-LDV. The target is rotated to provide a transverse velocity, where the speckle noise increases as the transverse velocity increases. The bandwidth of the Doppler signal obtained from the SF-LDV is increased from 4.7 kHz to 9.4 kHz as the transverse velocity increases from 0 m/s to 5 m/s. In contrast, the bandwidth obtained from the DF-LDV maintains at 0.09 Hz with or without the rotation limited by the linewidth of the P1 state used. By phase-locking the laser with a RF current modulation, the linewidth of the P1 state can be much reduced to further improve the velocity resolution and extend the detection range.

  8. Turnable Semiconductor Laser Spectroscopy in Hollow Optical Waveguides, Phase II SBIR

    SciTech Connect

    Gregory J. Fetzer, Ph.D.

    2001-12-24

    In this study a novel optical trace gas sensor based on a perforated hollow waveguide (PHW) was proposed. The sensor has been given the acronym ESHOW for Environmental Sensor using Hollow Optical Waveguides. Realizations of the sensor have demonstrated rapid response time (<2s), low minimum detection limits (typically around 3 x 10-5 absorbance). Operation of the PHW technology has been demonstrated in the near-infrared (NIR) and mid0infrared (MIR) regions of the spectrum. Simulation of sensor performance provided in depth understanding of the signals and signal processing required to provide high sensitivity yet retain rapid response to gas changes. A dedicated sensor electronics and software foundation were developed during the course of the Phase II effort. Commercial applications of the sensor are ambient air and continuous emissions monitoring, industrial process control and hazardous waste site monitoring. There are numerous other applications for such a sensor including medical diagnosis and treatment, breath analysis for legal purposes, water quality assessment, combustion diagnostics, and chemical process control. The successful completion of Phase II resulted in additional funding of instrument development by the Nations Institute of Heath through a Phase I SBIR grant and a strategic teaming relationship with a commercial manufacture of medical instrumentation. The purpose of the NIH grant and teaming relationship is to further develop the sensor to monitor NO in exhaled breath for the purposes of asthma diagnosis.

  9. Device applications and structural and optical properties of Indigo - A biodegradable, low-cost organic semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Zhengjun; Pisane, Kelly L.; Sierros, Konstantinos; Seehra, Mohindar S.; Korakakis, Dimitris

    2015-03-01

    Currently, memory devices based on organic materials are attracting great attention due to their simplicity in device structure, mechanical flexibility, potential for scalability, low-cost potential, low-power operation, and large capacity for data storage. In a recent paper from our group, Indigo-based nonvolatile organic write-once-read-many-times (WORM) memory device, consisting of a 100nm layer of indigo sandwiched between an indium tin oxide (ITO) cathode and an Al anode, has been reported. This device is found to be at its low resistance state (ON state) and can be switched to high resistance state (OFF state) by applying a positive bias with ON/OFF current ratio of the device being up to 1.02 × e6. A summary of these results along with the structural and optical properties of indigo powder will be reported. Analysis of x-ray diffraction shows a monoclinic structure with lattice parameters a(b)[c] = 0.924(0.577)[0.1222]nm and β =117° . Optical absorption shows a band edge at 1.70 eV with peak of absorption occurring at 1.90 eV. These results will be interpreted in terms of the HOMO-LUMO bands of Indigo.

  10. Temperature transformations of optical spectra in semiconductor flat heterostructures with quantum wells.

    PubMed

    Kondryuk, D V; Derevyanchuk, A V; Kramar, V M

    2016-04-20

    The results of theoretical study of the temperature dependence of a long-wave range fundamental absorption edge in flat nanoheterostructures with a single quantum well (nanofilms) are adduced. The quantum well is assumed to be rectangular, of finite depth, and with unstrained heterojunctions as the nanofilm surface. Energies of electrons, holes, and excitons have been calculated within the framework of the effective mass model using the Green functions techniques, with account of their interaction with polar optical phonons confined within a quantum well. Numerical calculations are performed for nanofilms β-CdS/β-HgS/β-CdS and Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As. It is shown that interaction with optical phonons causes a long-wave shift of the threshold frequency of the fundamental absorption band and a shift of exciton peaks by hundreds of Å for the first mentioned nanofilm and by dozens of Å for the second one, which is characterized by lower magnitudes of the constants of the electron-phonon coupling. The shift magnitude, as well as the height and half-width of the exciton absorption band, changes when the temperature exceeds 80 and 100 K, respectively.

  11. Effect of Pressure on Some Optical Properties of GaxIn1-xP Semiconductors

    NASA Astrophysics Data System (ADS)

    Vyas, P.; Gajjar, P.; Jani, A.

    2013-06-01

    A theoretical procedure is presented for the study of optical properties of ternary alloy GaxIn1-xP. The calculations are based on the pseudopotential formalism in which local potential coupled with the virtual crystal approximation (VCA) is applied to evaluate the effect of pressure on the optical properties like refractive index, electronic polarizability, plasmon energy, dielectric constant and equation of state for gallium concentration x = 0, 0.25, 0.50, 0.75 and 1 of the ternary alloy GaxIn1-xP. To incorporate the screening effect, local field correction functions due to Hartree, Taylor, Ichimaru et al. and Nagy are employed. The refractive index, electronic polarizability and dielectric constant computed for the parent binary compounds GaP and InP are found to be satisfactorily agreeing with the experimental report. It is seen that the refractive index of GaxIn1-xP decreases nonlinearly with the increase in pressure. The results obtained using Hartree's screening functions are not very close to the experimental data as it does not include any exchange and correlation effects. Overall good agreement with the experimental and other theoretical findings confirms the application. The author P. S. Vyas is thankful to UGC, New Delhi, India for providing financial support under minor research project No. F.: 47-651/08(WRO).

  12. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    NASA Astrophysics Data System (ADS)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  13. Recent developments in laser-driven and hollow-core fiber optic gyroscopes

    NASA Astrophysics Data System (ADS)

    Digonnet, M. J. F.; Chamoun, J. N.

    2016-05-01

    Although the fiber optic gyroscope (FOG) continues to be a commercial success, current research efforts are endeavoring to improve its precision and broaden its applicability to other markets, in particular the inertial navigation of aircraft. Significant steps in this direction are expected from the use of (1) laser light to interrogate the FOG instead of broadband light, and (2) a hollow-core fiber (HCF) in the sensing coil instead of a conventional solid-core fiber. The use of a laser greatly improves the FOG's scale-factor stability and eliminates the source excess noise, while an HCF virtually eliminates the Kerr-induced drift and significantly reduces the thermal and Faraday-induced drifts. In this paper we present theoretical evidence that in a FOG with a 1085-m coil interrogated with a laser, the two main sources of noise and drift resulting from the use of coherent light can be reduced below the aircraft-navigation requirement by using a laser with a very broad linewidth, in excess of 40 GHz. We validate this concept with a laser broadened with an external phase modulator driven with a pseudo-random bit sequence at 2.8 GHz. This FOG has a measured noise of 0.00073 deg/√h, which is 30% below the aircraft-navigation requirement. Its measured drift is 0.03 deg/h, the lowest reported for a laser-driven FOG and only a factor of 3 larger than the navigation-grade specification. To illustrate the potential benefits of a hollow-core fiber in the FOG, this review also summarizes the previously reported performance of an experimental FOG utilizing 235 m of HCF and interrogated with broadband light.

  14. Optical and electrical characterization of high resistivity semiconductors for constant-bias microbolometer devices

    NASA Astrophysics Data System (ADS)

    Saint John, David B.

    The commercial market for uncooled infrared imaging devices has expanded in the last several decades, following the declassification of pulse-biased microbolometer-based focal plane arrays (FPAs) using vanadium oxide as the sensing material. In addition to uncooled imaging platforms based on vanadium oxide, several constant-bias microbolometer FPAs have been developed using doped hydrogenated amorphous silicon (a-Si:H) as the active sensing material. While a-Si:H and the broader Si1-xGex:H system have been studied within the context of photovoltaic (PV) devices, only recently have these materials been studied with the purpose of qualifying and optimizing them for potential use in microbolometer applications, which demand thinner films deposited onto substrates different than those used in PV. The behavior of Ge:H is of particular interest for microbolometers due to its intrinsically low resistivity without the introduction of dopants, which alter the growth behavior and frustrate any attempt to address the merits of protocrystalline a-Ge:H. This work reports the optical, microstructural, and electrical characterization and qualification of a variety of Si:H, Si1-xGex:H, and Ge:H films deposited using a plasma enhanced chemical vapor deposition (PECVD) process, including a-Ge:H films which exhibit high TCR (4-6 -%/K) and low 1/f noise at resistivities of interest for microbolometers (4000 -- 6000 O cm). Thin film deposition has been performed simultaneously with real-time optical characterization of the growth evolution dynamics, providing measurement of optical properties and surface roughness evolutions relevant to controlling the growth process for deliberate variations in film microstructure. Infrared spectroscopic ellipsometry has been used to characterize the Si-H and Ge-H absorption modes allowing assessment of the hydrogen content and local bonding behavior in thinner films than measured traditionally. This method allows IR absorption analysis of hydrogen

  15. Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

    SciTech Connect

    Seo, Hyungtak; Cho, Young-Je; Bobade, Santosh M.; Park, Kyoung-Youn; Choi, Duck-Kyun; Kim, Jinwoo; Lee, Jaegab

    2010-05-31

    We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to approx10{sup 18} cm{sup -3} from the background level of 10{sup 16} cm{sup -3}, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at approx10{sup 8} and field-effect mobility at 22.7 cm{sup 2}/V s.

  16. Application of in situ ellipsometry in the fabrication of thin-film optical coatings on semiconductors.

    PubMed

    Boudreau, M G; Wallace, S G; Balcaitis, G; Murugkar, S; Haugen, H K; Mascher, P

    2000-02-20

    Thin-film interference filters, suitable for use on GaAs- and InP-based lasers, have been fabricated by use of the electron-cyclotron resonance plasma-enhanced chemical vapor deposition technique. Multilayer film structures composed of silicon oxynitride material have been deposited at low temperatures with an in situ rotating compensator ellipsometer for monitoring the index of refraction and thickness of the deposited layers. Individual layers with an index of refraction from 3.3 to 1.46 at 633 nm have been produced with a run-to-run reproducibility of 0.005 and a thickness control of 10 A. Several filter designs have been implemented, including high-reflection filters, one- and two-layer anitreflection filters, and narrow-band high-reflection filters. It is shown that an accurate measurement of the filter optical properties during deposition is possible and that controlled reflectance spectra can be obtained. PMID:18337985

  17. High-performance semiconductor optical amplifier array for self-aligned packaging using Si V-groove flip-chip technique

    NASA Astrophysics Data System (ADS)

    Leclerc, D.; Brosson, P.; Pommereau, F.; Ngo, R.; Doussiere, P.; Mallecot, F.; Gavignet, P.; Wamsler, I.; Laube, G.; Hunziker, W.

    1995-05-01

    A high performance four-tilted stripe semiconductor optical amplifier array, with low polarization sensitivity and very low-gain ripple, compatible with self-aligned flip-chip mounting on a Si motherboard is reported. Up to 32 dB of internal gain with 2-dB polarization sensitivity is obtained. A multifiber module has been realized, following an almost static optical alignment procedure, showing no degradation of the SOA array performances. Fiber-to-fiber gain, measured on the four stripes, is 14.4 +/- 1.3 dB with a gain ripple below +/- 0.1 dB.

  18. Enhancement of the low-frequency response of a reflective semiconductor optical amplifier slow light-based microwave phase shifter by forced coherent population oscillations

    NASA Astrophysics Data System (ADS)

    Meehan, Aidan; Connelly, Michael J.

    2014-05-01

    The enhancement of the low frequency gain response of a microwave phase shifter based on slow light in a bulk reflective semiconductor optical amplifier (RSOA), by using forced coherent population oscillations (FCPO), is experimentally demonstrated. FCPO is achieved by simultaneously modulating the input optical power and bias current. The beat signal gain improvement ranges from 45 to 0 dB over a frequency range of 0.5 to 2.5 GHz, thereby improving the noise performance of the phase shifter. Tunable phase shifts of up to 40º are possible over this frequency range.

  19. Time-resolved optical studies of wide-gap II-VI semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Hong

    ZnSe and ZnSe-based quantum well and superlattice structures are potential candidates for light emitting devices and other optical devices such as switches and modulators working in the blue-green wavelength range. Carrier dynamics studies of these structures are important in evaluating device performance as well as understanding the underlying physical processes. In this thesis, a carrier dynamics investigation is conducted for temperature from 77K to 295K on CdZnSSe/ZnSSe single quantum well structure (SQW) and ZnSe/ZnSTe superlattice fabricated by molecular beam epitaxy (MBE). Two experimental techniques with femtosecond time resolution are used in this work: up-conversion technique for time- resolved photoluminescence (PL) and pump-probe technique for time-resolved differential absorption studies. For both heterostructures, the radiative recombination is dominated by exciton transition due to the large exciton binding energy as a result of quantum confinement effect. The measured decay time of free exciton PL in CdZnSSe/ZnSSe SQW increases linearly with increasing temperature which agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination. However, the recombination of free carriers is also observed in CdZnSSe/ZnSSe SQW for the whole temperature range studied. On the other hand, in ZnSe/ZnSTe superlattice structures, the non- radiative recombination processes are non-negligible even at 77K and become more important in higher temperature range. The relaxation processes such as spectral hole burning, carrier thermalization and hot-carrier cooling are observed in ZnSe/ZnSTe superlattices at room temperature (295K) by the femtosecond pump-probe measurements. A rapid cooling of the thermalized hot- carrier from 763K to 450K within 4ps is deduced. A large optical nonlinearity (i.e., the induced absorption change) around the heavy-hole exciton energy is also obtained.

  20. Stripline mount for semiconductor lasers

    SciTech Connect

    Dietrich, N.R.; Holbrook, W.R.; Johnson, A.F. Jr.; Zacharias, A.

    1988-08-02

    An arrangement for coupling a semiconductor optical device to a signal source, is described, the arrangement comprising a stripline transmission path having a predetermined characteristic impedance Z/sub 0/; and resistance means connected in series with the stripline transmission path, chosen to provide impedance matching between the stripline transmission path and an associated semiconductor optical device.

  1. Optical characterization of CdS semiconductor nanoparticles capped with starch

    NASA Astrophysics Data System (ADS)

    Rodríguez-Fragoso, P.; de la Cruz, G. González; Tomas, S. A.; Zelaya-Angel, O.

    2010-11-01

    Starch capped cadmium sulfide (CdS) nanoparticles were synthesized by aqueous solution precipitation. Starch added during the synthesis of nanoparticles resulted in cadmium-rich nanoparticles forming a stable complex with starch. The size of the CdS quantum dots was measured using high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). The average diameter (d) of nanoparticles spanned the range 4.8 ± 0.4 to 5.7 ± 0.2 nm when the pH of the solution was varied within the range 10-14. The main Raman phonon of CdS, the longitudinal optical mode located around 300 cm-1, softens as diameter decreases, in accordance with theoretical predictions. In addition, the largest Raman response of starch, near 478 cm-1, related with the important skeletal vibration modes of the starch pyranose ring, dominates the spectra of the CdS capped nanoparticles and also softens as the size decreases. This fact indicates a strain variation on CdS as a function of d which increases as the pH increases.

  2. Investigation of proton damage in III-V semiconductors by optical spectroscopy

    NASA Astrophysics Data System (ADS)

    Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A. R.; Strittmatter, A.; Hoffmann, A.; Giudici, P.

    2016-06-01

    We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.

  3. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  4. Excitons and spin-dependent optical effects in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Govorov, Alexander; Warburton, Richard; Karrai, Khaled

    2004-04-01

    We discuss the possibility of entangling a localized exciton in a quantum dot with delocalized electrons in adjacent continuum states. We present two mechanisms by which this can occur, both involving excitons in InAs self-assembled quantum dots. The first mechanism involves a tunnel hybridization between weakly-confined electron states in the quantum dot and delocalized states in the continuum [1]. By describing the hybridization with the Anderson Hamiltonian we discover theoretically the existence of novel exciton states which can be called Kondo excitons [1]. We predict several optical manifestations of Kondo excitons. The second mechanism corresponds to an intra-dot Auger-like process [2,3]. Experiments in a magnetic field strongly support the picture of Auger-like processes [2]. [1] A.O. Govorov, R. J. Warburton, and K. Karrai, Phys. Rev. B RC, 67, 241307 (2003). [2] R.J. Warburton, B. Urbaszek, E.J. McGhee, C. Schulhauser, A. Hogele, K. Karrai, A.O.Govorov, J.M. Garcia, B.D.Gerardot, and P.M. Petroff, Nature 427, 135 (2004). [3] A. O. Govorov, K. Karrai, R. J. Warburton, and A. V. Kalameitsev, Physica E, 295 (2004).

  5. Multichannel emission spectrometer for high dynamic range optical pyrometry of shock-driven materials

    NASA Astrophysics Data System (ADS)

    Bassett, Will P.; Dlott, Dana D.

    2016-10-01

    An emission spectrometer (450-850 nm) using a high-throughput, high numerical aperture (N.A. = 0.3) prism spectrograph with stepped fiberoptic coupling, 32 fast photomultipliers and thirty-two 1.25 GHz digitizers is described. The spectrometer can capture single-shot events with a high dynamic range in amplitude and time (nanoseconds to milliseconds or longer). Methods to calibrate the spectrometer and verify its performance and accuracy are described. When a reference thermal source is used for calibration, the spectrometer can function as a fast optical pyrometer. Applications of the spectrometer are illustrated by using it to capture single-shot emission transients from energetic materials or reactive materials initiated by kmṡs-1 impacts with laser-driven flyer plates. A log (time) data analysis method is used to visualize multiple kinetic processes resulting from impact initiation of HMX (octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine) or a Zr/CuO nanolaminate thermite. Using a gray body algorithm to interpret the spectral radiance from shocked HMX, a time history of temperature and emissivity was obtained, which could be used to investigate HMX hot spot dynamics. Finally, two examples are presented showing how the spectrometer can avoid temperature determination errors in systems where thermal emission is accompanied by atomic or molecular emission lines.

  6. Visualization and measurement of capillary-driven blood flow using spectral domain optical coherence tomography.

    PubMed

    Cito, Salvatore; Ahn, Yeh-Chan; Pallares, Jordi; Duarte, Rodrigo Martinez; Chen, Zhongping; Madou, Marc; Katakis, Ioanis

    2012-09-01

    Capillary-driven flow (CD-flow) in microchannels plays an important role in many microfluidic devices. These devices, the most popular being those based in lateral flow, are becoming increasingly used in health care and diagnostic applications. CD-flow can passively pump biological fluids as blood, serum or plasma, in microchannels and it can enhance the wall mass transfer by exploiting the convective effects of the flow behind the meniscus. The flow behind the meniscus has not been experimentally identified up to now because of the lack of high-resolution, non-invasive, cross-sectional imaging means. In this study, spectral-domain Doppler optical coherence tomography is used to visualize and measure the flow behind the meniscus in CD-flows of water and blood. Microchannels of polydimethylsiloxane and glass with different cross-sections are considered. The predictions of the flow behind the meniscus of numerical simulations using the power-law model for non-Newtonian fluids are in reasonable agreement with the measurements using blood as working fluid. The extension of the Lucas-Washburn equation to non-Newtonian power-law fluids predicts well the velocity of the meniscus of the experiments using blood. PMID:23795150

  7. Dispersions of Semiconductor Nanoparticles in Thermotropic Liquid Crystal: From Optical Modification to Assisted Self-Assembly

    NASA Astrophysics Data System (ADS)

    Rodarte, Andrea L.

    The interaction of semiconducting quantum dot nanoparticles (QDs) within thermotropic liquid crystalline (LC) materials are studied in this thesis. LC materials are ideal for bottom-up organization of nanoparticles as an active matrix that can be externally manipulated via electric or magnetic fields. In addition, the optical properties of QDs can be modified by the surrounding LC resulting in novel devices such as a quantum dot/liquid crystal laser. The first system studies the dispersion of spherical nanoparticles in the phase. The dispersion is investigated with the use of polarized optical microscopy, fluorescence microscopy and confocal scanning microscopy. Quantum dots well dispersed in the isotropic phase are expelled from ordered domains of LC at the phase transition. Under controlled conditions, the majority of QDs in the system can form ordered three dimensional assemblies that are situated at defect points in the liquid crystal. The internal order of the assemblies is probed utilizing Forster resonance energy transfer (FRET), combined with small angle X-ray scattering (SAXS). Furthermore, the location of these assemblies can be predetermined with the use of beads as defect nucleation points in the cell. The interaction of QDs in a cholesteric liquid crystal (CLC) is also investigated. The reflection band created by the periodic change of index of refraction in a planar aligned CLC acts as a 1-D photonic cavity when the CLC is doped with a low concentration of QDs. A Cano-wedge cell varies the pitch of the CLC leading to the formation of Grandjean steps. This spatially tunes the photonic stop band, changing the resonance condition and continuously altering both the emission wavelength and polarization state of the QD ensemble. Using high resolution spatially and spectrally resolved photoluminescence measurements, the emission is shown to be elliptically polarized and that the tilt of the ellipse, while dependent on the emission wavelength, additionally

  8. Theory of optical spectra in a magnetic field in doped semiconductor quantum wells: Impurity-induced broadening and transitions

    NASA Astrophysics Data System (ADS)

    Lyo, S. K.

    1989-10-01

    The effect of carrier-impurity interactions on luminescence- and excitation-spectroscopy line shapes and the Landau-level spectral density in a strong quantizing magnetic field is examined in modulation-doped semiconductor quantum wells. The line-shape function is obtained by summing the ``ladder diagrams,'' extending our previous ``one-rung'' approximation. Apart from yielding a line broadening, the carrier-impurity interaction is found to induce off-diagonal transitions (ODT) (n-->n' n'≠n) between the Landau levels in the conduction and valence bands, breaking the usual n-->n selection rule. Here the first and second integers indicate the Landau quantum numbers in the conduction (valence) and valence (conduction) bands, respectively, for luminescence (excitation), for example, in an n-type system. The Landau-level spectral density (essential for obtaining the line-shape functions) is investigated by a self-consistent Born approximation which includes inter-Landau-level impurity scattering. The theory is applied to an n-type strained InxGa1-xAs/GaAs quantum well, where optical transitions arise between the conduction band and the strain-split in-plane ``light-hole'' band. For excitation spectra, the theory predicts that ODT introduce lines below the usual nF-->nF threshold transition as well as satellite lines between the usual main n-->n lines above the threshold (i.e., n>=nF). Here nF is the quantum number of the lowest-lying empty or partially filled conduction-band Landau level. The luminescence line shape is dominated by ODT 1, 2,...-->0 (in addition to the main 0-->0 transition) at low temperatures and by the usual n-->n transitions at high temperatures. The accuracy of the ``one-rung'' approximation is assessed.

  9. Significant Lowering Optical Loss of Electrodes via using Conjugated Polyelectrolytes Interlayer for Organic Laser in Electrically Driven Device Configuration

    PubMed Central

    Yi, Jianpeng; Niu, Qiaoli; Xu, Weidong; Hao, Lin; Yang, Lei; Chi, Lang; Fang, Yueting; Huang, Jinjin; Xia, Ruidong

    2016-01-01

    One of the challenges toward electrically driven organic lasers is the huge optical loss associated with the contact of electrodes and organic gain medium in device. We demonstrated a significant reduction of the optical loss by using our newly developed conjugated polyelectrolytes (CPE) PPFN+Br− as interlayer between gain medium and electrode. The optically pumped amplified spontaneous emission (ASE) was observed at very low threshold for PFO as optical gain medium and up to 37 nm thick CPE as interlayer in device configuration, c.f., a 5.7-fold ASE threshold reduction from pump energy 150 μJ/cm2 for ITO/PFO to 26.3 μJ/cm2 for ITO/PPFN+Br−/PFO. Furthermore, ASE narrowing displayed at pump energy up to 61.8 μJ/cm2 for device ITO/PEDOT:PSS/PFO/PPFN+Br−/Ag, while no ASE was observed for the reference devices without CPE interlayer at pump energy up to 240 μJ/cm2. The optically pumped lasing operation has also been achieved at threshold up to 45 μJ/cm2 for one-dimensional distributed feedback laser fabricated on ITO etched grating in devices with CPE interlayer, demonstrating a promising device configuration for addressing the challenge of electrically driven organic lasers. PMID:27165729

  10. Significant Lowering Optical Loss of Electrodes via using Conjugated Polyelectrolytes Interlayer for Organic Laser in Electrically Driven Device Configuration

    NASA Astrophysics Data System (ADS)

    Yi, Jianpeng; Niu, Qiaoli; Xu, Weidong; Hao, Lin; Yang, Lei; Chi, Lang; Fang, Yueting; Huang, Jinjin; Xia, Ruidong

    2016-05-01

    One of the challenges toward electrically driven organic lasers is the huge optical loss associated with the contact of electrodes and organic gain medium in device. We demonstrated a significant reduction of the optical loss by using our newly developed conjugated polyelectrolytes (CPE) PPFN+Br- as interlayer between gain medium and electrode. The optically pumped amplified spontaneous emission (ASE) was observed at very low threshold for PFO as optical gain medium and up to 37 nm thick CPE as interlayer in device configuration, c.f., a 5.7-fold ASE threshold reduction from pump energy 150 μJ/cm2 for ITO/PFO to 26.3 μJ/cm2 for ITO/PPFN+Br-/PFO. Furthermore, ASE narrowing displayed at pump energy up to 61.8 μJ/cm2 for device ITO/PEDOT:PSS/PFO/PPFN+Br-/Ag, while no ASE was observed for the reference devices without CPE interlayer at pump energy up to 240 μJ/cm2. The optically pumped lasing operation has also been achieved at threshold up to 45 μJ/cm2 for one-dimensional distributed feedback laser fabricated on ITO etched grating in devices with CPE interlayer, demonstrating a promising device configuration for addressing the challenge of electrically driven organic lasers.

  11. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects

    NASA Astrophysics Data System (ADS)

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; Nykypanchuk, Dmytro; Nam, Chang-Yong

    2016-03-01

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that

  12. High-gain optical Cherenkov oscillator driven by low-voltage electron beam

    SciTech Connect

    Smetanin, I.V.; Oraevsky, A.N.

    1995-12-31

    A novel scheme of high-gain optical (from IR up to UV) Cherenkov-type oscillator driven by low-voltage high-current electron beam is proposed in the present report. In the scheme discussed the magnetized electron beam propagates above the surface of absorbing medium of complex dielectric susceptibility {epsilon}{omega} = {epsilon}{sub 1}({omega}) + i{epsilon}{sub 2}({omega}), {epsilon}{sub 2}>0. We have found that at frequencies {omega} that {beta}{sup 2}> 2{epsilon}{sub 1}/{vert_bar}{epsilon}{vert_bar}{sup 2} ({beta} = v/c, v is the electron velocity), an amplification of co-propagating slow surface electromagnetic wave is possible. In contrast to the conventional Cherenkov oscillators, the absorption condition {epsilon}2>0 is crucial for the gain, which is absent for transparent medium. The physics of this amplification effect is analogous to that of electron beam dissipative instability. The wavelength generated is determined here by dielectric properties of the surface, and does not depend strongly on electron energy. Thus it is possible to use rather compact low voltage ({le} 1MeV) high-current accelerators as drivers. Optimum oscillation conditions are found to be at frequencies near the resonance absorption lines of surface material (i.e. from IR up to UV). The gain up to {approximately}0.5cm{sup -1} in the near IR ({approximately}10THz, SrF{sub 2} absorption line) is possible for 250keV high current (density {approximately}10{sup 12}cm{sup -3}) electron beam.

  13. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    SciTech Connect

    Podoskin, A. A. Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  14. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: Energy transfer vs. optical coupling effects

    DOE PAGES

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; Nykypanchuk, Dmytro; Nam, Chang -Yong

    2015-12-07

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from themore » OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. Lastly, these results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.« less

  15. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

    PubMed

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

    2016-03-21

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

  16. Resonant acousto-optics in the terahertz range: TO-phonon polaritons driven by an ultrasonic wave

    NASA Astrophysics Data System (ADS)

    Muljarov, E. A.; Poolman, R. H.; Ivanov, A. L.

    2011-03-01

    The resonant acousto-optic effect is studied both analytically and numerically in the terahertz range where the transverse-optical (TO) phonons play the role of a mediator which strongly couples the ultrasound and light fields. A propagating acoustic wave interacts with the TO phonons via anharmonic channels and opens band gaps in the TO-phonon polariton energy dispersion that results in pronounced Bragg scattering and reflection of the incoming light. The separation in frequency of different Bragg replicas, which is at the heart of acousto-optics, allows us to study the resonant acousto-optic effect in the most simple and efficient geometry of collinear propagation of electromagnetic and ultrasonic waves. The acoustically induced energy gaps, Bragg reflection spectra, and the spatial distribution of the electric field and polarization are calculated for CuCl parameters, in a wide range of frequencies and intensities of the pumping acoustic wave. Our results show drastic changes in terahertz spectra of semiconductor crystals that open the way for efficient and accessible manipulation of their infrared properties by tuning the parameters of the acoustic wave.

  17. Microstructural and Optical properties of transition metal (Cu) doped ZnO diluted magnetic semiconductor nano thin films fabricated by sol gel method

    NASA Astrophysics Data System (ADS)

    Ozturk, Ozgur; Asikuzun, Elif; Tasci, A. Tolga; Arda, Lutfi; Demirozu Senol, Sevim; Celik, Sukru; Terzioglu, Cabir

    Undoped and Cu (Copper) doped ZnO (Zn1-xCuxO) semiconductor thin films were produced by using sol-gel method. Cu was doped 1%, 2%, 3%, 4% and 5% ratio. Methanol and monoethanolamine (MEA) were used as solvent and stabilizer. In this study, the effect of Cu doping was investigated on microstructural and optical properties of ZnO DMS thin films. XRD, SEM, AFM and UV-VIS spectrometer measurements were performed for the microstructural and optical characterization. XRD, SEM and AFM results were showed that all of Cu doped ZnO based thin films have a hexagonal structure. The grain size of Cu doped ZnO thin films and morphology of surface were changed with increasing Cu doping. The optical transmittance of transition metal (Cu) doped ZnO thin films were decreased with doping. Keywords:Diluted Magnetic Semiconductor (DMS), Thin Film, Cu-doping, Bandgap Energy, ZnO. This research has been supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KU-BAP-05/2015-12 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259.

  18. Synthesis, optical properties and ultrafast electronic relaxation of layered semiconductor nanoparticles: Lead iodide, bismuth iodide, bismuth sulfide

    NASA Astrophysics Data System (ADS)

    Sengupta, Archita

    The first direct observation of the electronic relaxation dynamics in PbI2, BiI3 and Bi2S3 nanoparticles using femtosecond transient spectroscopy has been reported. The nanoparticles were synthesized in polar and nonpolar solvents, polymer matrices and inverse micelles using colloidal chemistry methods and in thin films. The particle sizes were determined using TEM which provided direct evidence of photodegradation of nanoparticles. The ground state electronic absorption spectra of PbI 2 and BiI3 colloidal nanoparticles show well-resolved peaks in the near UV and visible region. Using a particle in an anisotropic box model the blue shift and increase in absorption of these peaks with simultaneous decrease in particle size have been explained. The UV-visible absorption spectra of Bi2S3 colloidal nanoparticles have very different features compared to those of PbI2 and BiI3 nanoparticles. Similarities and differences found among these nanoparticle systems, PbI 2, BiI3 and Bi2S3, in terms of optical properties and femtosecond electronic relaxation dynamics have been discussed. For PbI2, BiI3 and Bi2S3 with excitation at 390 nm and probing in the near infrared, the electronic relaxation dynamics were directly monitored and found to be sensitive to solvent and insensitive to particle size. For both PbI2 and BiI3 there appeared to be an oscillatory feature at early times with a period changing with solvent but not with particle size. However, for BiI3, the oscillation periods were slightly shorter and overall relaxation was somewhat faster than that in PbI2. The possibilities of the origin of this feature have been addressed. For Bi2S3 system, the early time dynamics did not show any resolvable oscillation. It could be due to the fact that the origin of oscillations in PbI2 and BiI3 nanoparticle system is connected to layered iodide structure and thus is not found in layered sulfide structure or the feature was not observed due to overall fast relaxation in Bi2S3

  19. Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

    NASA Astrophysics Data System (ADS)

    Rigutti, L.; Mancini, L.; Hernández-Maldonado, D.; Lefebvre, W.; Giraud, E.; Butté, R.; Carlin, J. F.; Grandjean, N.; Blavette, D.; Vurpillot, F.

    2016-03-01

    The ternary semiconductor alloy Al0.25Ga0.75N has been analyzed by means of correlated photoluminescence spectroscopy and atom probe tomography (APT). We find that the composition measured by APT is strongly dependent on the surface electric field, leading to erroneous measurements of the alloy composition at high field, due to the different evaporation behaviors of Al and Ga atoms. After showing how a biased measurement of the alloy content leads to inaccurate predictions on the optical properties of the material, we develop a correction procedure which yields consistent transition and localization energies for the alloy photoluminescence.

  20. Asymmetric laser sideband generation with a tapered semiconductor amplifier

    NASA Astrophysics Data System (ADS)

    Yanakas, Michael; Lim, Michael

    2013-03-01

    We have constructed a free-space, frequency-shifted feedback amplifier using a tapered semiconductor gain element. The general layout of the system is similar to that described in Littler, et al., Opt. Comm. 88, 523 (1992). Traveling-wave feedback is demonstrated with the m = - 1 order of several different acousto-optic modulators driven at variable frequency. Asymmetric sideband production is observed in the rf spectrum of a fast photodiode and in the transmission of a scanning Fabry-Perot interferometer. The number of asymmetric modes is controlled with the AOM rf drive power and the seed laser optical power. Supported by NSF PHY-0613659