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Sample records for driven semiconductor optical

  1. Consistency Properties of a Chaotic Semiconductor Laser Driven by Optical Feedback

    NASA Astrophysics Data System (ADS)

    Oliver, Neus; Jüngling, Thomas; Fischer, Ingo

    2015-03-01

    We experimentally study consistency properties of a semiconductor laser in response to a coherent optical drive originating from delayed feedback. The laser is connected to a short and a long optical fiber loop, switched such that only one is providing input to the laser at a time. This way, repeating the exact same optical drive twice, we find consistent or inconsistent responses depending on the pump parameter and we relate the kind of response to strong and weak chaos. Moreover, we are able to experimentally determine the sub-Lyapunov exponent, underlying the consistency properties.

  2. On the output characteristics of a semiconductor optical amplifier driven by an ultrafast optical time division multiplexing pulse train

    NASA Astrophysics Data System (ADS)

    Zoiros, K. E.; Chasioti, R.; Koukourlis, C. S.; Houbavlis, T.

    2007-03-01

    A comprehensive theoretical analysis of a semiconductor optical amplifier (SOA) that is subject to an ultrafast optical time division multiplexing pulse stream is presented with the help of a simple but efficient model developed for this purpose. The model combines the necessary set of mathematical equations with the appropriate simplifying assumptions to describe in the time domain gain saturation and recovery for the case of multiple incoming pulses. In this manner, analytical expressions can be obtained for the power and chirp profile of the amplified pulses, essentially extending the work that has been performed for a single pulse only. This allows to identify the critical operational parameters and to investigate and evaluate their effect on these two output characteristics. The derived simulation curves are thoroughly studied to specify the limitations imposed on the SOA small signal gain and carrier lifetime as well as on the full-width at half-maximum (FWHM) and energy of the input pulses and, based on a series of logical arguments, to extract useful rules concerning their selection so as to achieve improved performance with respect to the practical applications of all-optical switching and pulse compression. The obtained results indicate that due to the continuous insertion of pulses, the requirements for the SOA small signal gain and the input pulse energy are stringent than those for the case of isolated pulse amplification. The combination of these two parameters determines also the regime in which the amplifier must be biased to operate in order to ensure distortionless pulse amplification and enhanced chirp for efficient pulse compression and it has been found that low saturation is necessary for the former case whilst heavy saturation for the latter. The scopes of the corresponding requirements for the carrier lifetime and the FWHM are also tight but to a less extent and can be simply satisfied with the available photonics technology. These results

  3. 2 Gbit/s 0.5 μm complementary metal-oxide semiconductor optical transceiver with event-driven dynamic power-on capability

    NASA Astrophysics Data System (ADS)

    Wang, Xingle; Kiamilev, Fouad; Gui, Ping; Wang, Xiaoqing; Ekman, Jeremy; Zuo, Yongrong; Blankenberg, Jason; Haney, Michael

    2006-06-01

    A 2 Gb/s0.5 μm complementary metal-oxide semiconductor optical transceiver designed for board- or backplane level power-efficient interconnections is presented. The transceiver supports optical wake-on-link (OWL), an event-driven dynamic power-on technique. Depending on external events, the transceiver resides in either the active mode or the sleep mode and switches accordingly. The active-to-sleep transition shuts off the normal, gigabit link and turns on dedicated circuits to establish a low-power (~1.8 mW), low data rate (less than 100 Mbits/s) link. In contrast the normal, gigabit link consumes over 100 mW. Similarly the sleep-to-active transition shuts off the low-power link and turns on the normal, gigabit link. The low-power link, sharing the same optical channel with the normal, gigabit link, is used to achieve transmitter/receiver pair power-on synchronization and greatly reduces the power consumption of the transceiver. A free-space optical platform was built to evaluate the transceiver performance. The experiment successfully demonstrated the event-driven dynamic power-on operation. To our knowledge, this is the first time a dynamic power-on scheme has been implemented for optical interconnects. The areas of the circuits that implement the low-power link are approximately one-tenth of the areas of the gigabit link circuits.

  4. Enhanced infrared magneto-optical response of the nonmagnetic semiconductor BiTeI driven by bulk Rashba splitting.

    PubMed

    Demkó, L; Schober, G A H; Kocsis, V; Bahramy, M S; Murakawa, H; Lee, J S; Kézsmárki, I; Arita, R; Nagaosa, N; Tokura, Y

    2012-10-19

    We study the magneto-optical (MO) response of the polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3 T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  5. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  6. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  7. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  8. Optical properties of semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Son, Joong-Kon

    Thanks to the difference in energy gap between two semiconductors and to their different indices of refraction, semiconductor heterostructures can confine electrons as well as photons. This property makes it possible to build semiconductor-based optical resonators (microcavities) with a radiation dipole (a quantum well) in its midst to investigate the coupling between the optical modes of the microcavity with the exciton modes of the quantum well. Such an interaction, besides its intrinsic interest, is relevant to vertically-emitting semiconductor lasers, based on the quantum well- microcavity system. In this thesis, we will present experimental evidence of temperature and electric-field dependent exciton-cavity coupling in GaAs-GaAlAs microcavities.

  9. Optical Processing With Photorefractive Semiconductors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory

    1989-01-01

    Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

  10. Electrically driven optical antennas

    NASA Astrophysics Data System (ADS)

    Kern, Johannes; Kullock, René; Prangsma, Jord; Emmerling, Monika; Kamp, Martin; Hecht, Bert

    2015-09-01

    Unlike radiowave antennas, so far optical nanoantennas cannot be fed by electrical generators. Instead, they are driven by light or indirectly via excited discrete states in active materials in their vicinity. Here we demonstrate the direct electrical driving of an in-plane optical antenna by the broadband quantum-shot noise of electrons tunnelling across its feed gap. The spectrum of the emitted photons is determined by the antenna geometry and can be tuned via the applied voltage. Moreover, the direction and polarization of the light emission are controlled by the antenna resonance, which also improves the external quantum efficiency by up to two orders of magnitude. The one-material planar design offers facile integration of electrical and optical circuits and thus represents a new paradigm for interfacing electrons and photons at the nanometre scale, for example for on-chip wireless communication and highly configurable electrically driven subwavelength photon sources.

  11. Integrated Semiconductor/Optical Information Processors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen

    1989-01-01

    Optical information processors made of integrated three-dimensional devices which include optical, electro-optical, and electronic devices. Integration achieved by combination and extension of advanced semiconductor (integrated-circuit) and integrated-optics technology. In integrated device, spatial light modulator fabricated on surface of chip. Leads to miniaturization of sophisticated optical information-processing systems.

  12. Optical isolator for semiconductor lasers.

    PubMed

    Kuwahara, H

    1980-01-15

    An optical isolator for semiconductor lasers, consisting of a polarizer and a quarterwave plate, was investigated experimentally. It was assembled in a compact laser-to-fiber coupling module. Experiment showed forward loss of 1.15 dB, backward loss of 24.8 dB, and rotative tolerance of 2.4 deg for 1 dB down. The length of the module is 43.2 mm. The coupling efficiency to a graded-index multimode fiber is 37.5%. The extinction ratio is improved by 6.75 dB. The suppression effect on the influence of reflected light was investigated, using the assembled module.

  13. Optical cavity furnace for semiconductor wafer processing

    DOEpatents

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  14. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1996-08-20

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  15. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  16. Engineering optical properties of semiconductor metafilm superabsorbers

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2016-04-01

    Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials' properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.

  17. Optical processing for semiconductor device fabrication

    NASA Technical Reports Server (NTRS)

    Sopori, Bhushan L.

    1994-01-01

    A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

  18. Optical Spectroscopy of Hybrid Semiconductor Quantum Dots and Metal Nanoparticles

    DTIC Science & Technology

    2014-11-07

    SECURITY CLASSIFICATION OF: Optical studies of semiconductor quantum dots (SQDs), metal nanoparticles (MNPs), and their hybrid nanomaterials are...Distribution Unlimited Final Report: Optical Spectroscopy of Hybrid Semiconductor Quantum Dots and Metal Nanoparticles The views, opinions and/or findings...Semiconductor Quantum Dots and Metal Nanoparticles Report Title Optical studies of semiconductor quantum dots (SQDs), metal nanoparticles (MNPs), and their

  19. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1994-01-01

    Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

  20. Optical Properties of Non-Crystalline Semiconductors.

    DTIC Science & Technology

    1984-01-01

    Instruments, 1974, unpublished. 42. de Neufville, J.P., Photostructural transformations in amorphous solids, 0 in Optical Properties of Solids --New...semiconductors, in Optical Properties of Solids , Nudelman, S., and Mitra, S.S., eds., Plenum, N.Y., 1969, 123. 52. Cody, G.D., Brooks, B.G., and

  1. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1998-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  2. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  3. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1995-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  4. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1998-06-30

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  5. Investigation of semiconductor clad optical waveguides

    NASA Technical Reports Server (NTRS)

    Batchman, T. E.; Carson, R. F.

    1985-01-01

    A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

  6. Driven optical matter (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Figliozzi, Patrick; Sule, Nishant; Yan, Zijie; Vaikuntanathan, Suriyanarayanan; Rice, Stuart A.; Scherer, Norbert F.

    2016-09-01

    Optical trapping has enabled studying a wide variety of questions and systems in chemistry, biology, physics, and materials science. For example, optical trapping has been used to understand hydrodynamic interactions in dilute and dense colloidal fluids and discover connections to granular materials. In this presentation we show that shaped optical fields and gradients can be used to study the electrodynamic interactions amongst nanoparticles (NPs) and drive them into new ordered states. We demonstrate the formation and use of NP-based optical matter to study a range of nonequilibrium phenomena in solution; field-driven barrier crossing phenomena and noise-driven ordering. Optical matter, a material that forms only in the presence of an optical field, involves NP interactions by optical scattering and interference. Metal NPs can be formed into regular arrangements in minimally shaped fields; e.g., in focused Gaussian beams, line traps, and optical ring traps. Inter-particle interactions and motions are also affected when the optical matter is driven. Particles recirculate in an optical ring vortex trap allowing long term measurements to examine rare events. In particular, particles can hop between optical binding sites, move past electrodynamic obstacles or pass each other while moving around the ring. The polarization state of the optical beam can be used to produce periodic variations of the NP electrodynamic interactions. As particles circulate this "noise" causes NP clusters to be less stable as if the temperature of the system is increased. Conversely, we observe noise-driven ordering in dense systems. We will explain these phenomena using simulations and theory.

  7. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  8. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  9. Electrically driven optical metamaterials

    PubMed Central

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-01-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors. PMID:27328976

  10. Electrically driven optical metamaterials

    NASA Astrophysics Data System (ADS)

    Le-van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-06-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors.

  11. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  12. Stable spatial solitons in semiconductor optical amplifiers.

    PubMed

    Ultanir, E A; Michaelis, D; Lederer, F; Stegeman, G I

    2003-02-15

    The existence of stable dissipative spatial solitons at low intensities in patterned electrode semiconductor optical amplifiers (SOAs) is predicted theoretically. In contrast to conventional SOAs, this system may support stable solitons because the inherent saturating losses provide subcritical bifurcations for both the plane-wave and the soliton solution.

  13. Stable dissipative solitons in semiconductor optical amplifiers.

    PubMed

    Ultanir, Erdem A; Stegeman, George I; Michaelis, Dirk; Lange, Christoph H; Lederer, Falk

    2003-06-27

    We have observed for the first time stable spatial solitons in semiconductor optical amplifiers. Soliton destabilization due to the growth of background noise was suppressed by using patterned electrodes on the device. Numerical simulations fit very well with the experiment results. We show that it is possible to excite these solitons with about 60 mW input power.

  14. Third order mode optically pumped semiconductor laser

    NASA Astrophysics Data System (ADS)

    De Rossi, A.; Semaltianos, N.; Chirlias, E.; Vinter, B.; Ortiz, V.; Berger, V.

    2002-06-01

    Lasing action on a third order waveguide mode is demonstrated at room temperature under optical pumping, in a specifically designed quantum well laser structure. The AlGaAs heterostructure involves barriers which ensure that the third order waveguide mode has a higher overlap with the single quantum well emitter than the fundamental mode. Third order mode operation of a laser structure opens the way to modal phase matched parametric down conversion inside the semiconductor laser itself. It is a first step towards the realization of semiconductor twin photon laser sources, needed for quantum information experiments.

  15. Subwavelength metal-optic semiconductor nanopatch lasers.

    PubMed

    Yu, Kyoungsik; Lakhani, Amit; Wu, Ming C

    2010-04-26

    We report on near infrared semiconductor nanopatch lasers with subwavelength-scale physical dimensions (0.019 cubic wavelengths) and effective mode volumes (0.0017 cubic wavelengths). We observe lasing in the two most fundamental optical modes which resemble oscillating electrical and magnetic dipoles. The ultra-small laser volume is achieved with the presence of nanoscale metal patches which suppress electromagnetic radiation into free-space and convert a leaky cavity into a highly-confined subwavelength optical resonator. Such ultra-small lasers with metallodielectric cavities will enable broad applications in data storage, biological sensing, and on-chip optical communication.

  16. Nonlinear Optical Interactions in Semiconductors

    DTIC Science & Technology

    1984-10-01

    STATEMENT Zb. O TRIUMI’ION COO 13. ABSTRACT (Max"imm 200 worm) They are in the process of completing two prapers and four patents involving optical...involvins four -photon mixing to probe electron dynamics in the Gunn effect regime in GaAeAs and HgCdTe superlattice, utilizing our two recently constructed...CA 92008 K _._.. .. ABSTRACT We are in the process of completing two papers and four patents involving optical absorptions in GaAs which has led to

  17. Nonlinear Optical Interactions in Semiconductors

    DTIC Science & Technology

    1984-03-16

    aU internal audits for TACAN Corporation. 7 V. Coupling A, C. N. R. S., Physique du Solide et Energie Solaire We have an ongoing interaction with Dr...underway at TACAN Corporation. We regularly discuss optical pumping and four - wave parametric mixing in multiple quantum well material and plan to

  18. Semiconductor nanowire optical antenna solar absorbers.

    PubMed

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L

    2010-02-10

    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology.

  19. Nonlinear Optical Interactions in Semiconductors

    DTIC Science & Technology

    1985-02-09

    proposed in Part F of our research proposal. Finally,* an experiment involving four -photon mixing to probe electron dynamics in the Gunn effect regime...Finally, an experiment involving four -photon mixing to probe electron dynamics in the Gunn effect regime in GaAIAs and HgCdTe superlattice, utilizing...a dielectric constant modulation which then gives rise to four -photon mixing. Our attempts are focused on observing a number of new optical effects

  20. Nonlinear Optical Interactions in Semiconductors.

    DTIC Science & Technology

    1985-12-10

    completing bnother article for publication. In addition, we have made four invention disclosures o the U.S. Air Force.We received the delivery of two large...of completing another article for publication. In addition, we have made four invention disclosures to the U. S. Air Force. We received the delivery...gives rise to four -photon mixing. Our attempts were focused on observing a number of new optical effects including nonlinear absorption and transmission

  1. Semiconductor ring lasers as optical neurons

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Gelens, L.; Mashal, L.; Beri, S.; Van der Sande, G.; Danckaert, J.; Verschaffelt, G.

    2012-06-01

    Semiconductor Ring Lasers (SRLs) are a modern class of semiconductor lasers whose active cavity is characterized by a circular geometry. This enables the laser to support two counterpropagating modes, referred to as the clockwise (CW) and the counterclockwise (CCW) mode. Semiconductor ring lasers have been shown to have a regime of operation in which they are excitable, when the linear coupling between the counterpropagating modes is asymmetric. This can be achieved by increasing the reflection of, for example, the CW mode into the CCW mode. This will stabilize lasing in the CCW mode. In the excitable regime, the SRL will fire optical pulses (spikes) in the CW mode as a response to noise perturbations. In this contribution we experimentally and theoretically characterize these spikes. Our experiments reveal a statistical distribution of the characteristics of the optical pulses that is not observed in regular excitable systems. In particular, an inverse correlation exists between the pulse amplitude and duration. Numerical simulations and an interpretation in an asymptotic phase space confirm and explain these experimentally observed pulse characteristics [L. Gelens et al., Phys. Rev. A 82 063841, 2010]. We will also theoretically consider asymmetric SRLs coupled through a single bus waveguide. This is a first step towards an integrated optical neural network using semiconductor ring lasers as building blocks. We will show that for weak coupling, excitatory excursions still persist due to the similar phase space structure. Moreover, the coupled SRLs can excite pulses in each other and can thus function as communicating neurons [W. Coomans et al., Phys. Rev. E 84 036209, 2011]. This type of neural network can be fully integrated on chip and does not suffer from the drawback of needing extra-cavity measures, such as optical injection or saturable absorbers.

  2. Toward a photoconducting semiconductor RF optical fiber antenna array.

    PubMed

    Davis, R; Rice, R; Ballato, A; Hawkins, T; Foy, P; Ballato, J

    2010-09-20

    Recently, optical fibers comprising a crystalline semiconductor core in a silica cladding have been successfully drawn by a conventional drawing process. These fibers are expected to exhibit a photoconductive response when illuminated by photons more energetic than the band gap of the core. In the photoconducting state, such a fiber can be expected to support driven RF currents so as to function as an antenna element, much as a plasma antenna. In this paper, we report the first device-related results on a crystalline semiconductor core optical fiber potentially useful in a photoconducting optical fiber antenna array; namely, optically induced changes to the electrical conductivity of a glass-clad germanium-core optical fiber. Since DC photoconduction measurements were masked by a photovoltaic effect, RF measurements at 5 MHz were used to determine the magnitude of the induced photoconductive effect. The observed photoconductivity, though not large in the present experiment, was comparable to that measured for the bulk crystals from which the fibers were drawn. The absorbed pumping light generated photo-carriers, thereby transforming the core from a dielectric material to a conductor. This technology could thus enable a class of transient antenna elements useful in low observable and reconfigurable antenna array applications.

  3. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  4. Optically pumped nuclear magnetic resonance of semiconductors.

    PubMed

    Hayes, Sophia E; Mui, Stacy; Ramaswamy, Kannan

    2008-02-07

    Optically pumped NMR (OPNMR) of direct gap and indirect gap semiconductors has been an area of active research interest, motivated by both basic science and technological perspectives. Proposals to enhance and to spatially localize nuclear polarization have stimulated interest in this area. Recent progress in OPNMR has focused on exploring the experimental parameter space in order to elucidate details of the underlying photophysics of optical pumping phenomena. The focus of this review is on recent studies of bulk samples of GaAs and InP, namely, the photon energy dependence, the magnetic field dependence, and the phase dependence of OPNMR resonances. Models for the development of nuclear polarization are discussed.

  5. Dynamics of optically-injected semiconductor nanolasers

    NASA Astrophysics Data System (ADS)

    Sarraute, J.-M.; Schires, K.; LaRochelle, S.; Grillot, F.

    2016-03-01

    We propose a novel rate equation model of an optically-injected semiconductor nanolaser based on an expression of the complex electric field including a novel spontaneous emission term. The latter takes into account the amplification of the zero-point energy of the field as well as the Purcell effect. The modulation response of the optically injection-locked nanolaser is studied for the first time using a small-signal analysis of the model. We then investigate the injection map of the nanolaser and study the 3-dB bandwidth of the nanolaser inside the locking region.

  6. Optical investigations of noncrystalline semiconductors. [considering silicon and boron films

    NASA Technical Reports Server (NTRS)

    Blum, N. A.; Feldman, C.; Moorjani, K.

    1973-01-01

    Three areas of investigation into the properties of amorphous silicon and boron are reported: (1) optical properties of elemental amorphous semiconductors; (2) Mossbauer studies of disordered systems; and (3) theoretical aspects of disordered semiconductors.

  7. Optical Studies of Semiconductor Quantum Dots

    NASA Astrophysics Data System (ADS)

    Yükselici, H.; Allahverdi, Ç.; Aşıkoğlu, A.; Ünlü, H.; Baysal, A.; Çulha, M.; İnce, R.; İnce, A.; Feeney, M.; Athalin, H.

    Optical absorption (ABS), steady-state photoluminescence (PL), resonant Raman, and photoabsorption (PA) spectroscopies are employed to study quantum-size effects in II-VI semiconductor quantum dots (QDs) grown in glass samples. We observe a size-dependent shift in the energetic position of the first exciton peak and have examined the photoinduced evolution of the differential absorption spectra. The Raman shifts of the phonon modes are employed to monitor stoichiometric changes in the composition of the QDs during growth. Two sets of glass samples were prepared from color filters doped with CdS x Se1 - x and Zn x Cd1 - x Te. We analyze the optical properties of QDs through the ABS, PL, resonant Raman, and PA spectroscopies. The glass samples were prepared from commercially available semiconductor doped filters by a two-step thermal treatment. The average size of QDs is estimated from the energetic position of the first exciton peak in the ABS spectrum. A calculation based on a quantized-state effective mass model in the strong confinement regime predicts that the average radius of QDs in the glass samples ranges from 2.9 to 4.9 nm for CdTe and from 2.2 to 9.3 nm for CdS0. 08Se0. 92. We have also studied the nonlinear optical properties of QDs by reviewing the results of size-dependent photoinduced modulations in the first exciton band of CdTe QDs studied by PA spectroscopy.

  8. Glass-clad semiconductor core optical fibers

    NASA Astrophysics Data System (ADS)

    Morris, Stephanie Lynn

    Glass-clad optical fibers comprising a crystalline semiconductor core have garnered considerable recent attention for their potential utility as novel waveguides for applications in nonlinear optics, sensing, power delivery, and biomedicine. As research into these fibers has progressed, it has become evident that excessive losses are limiting performance and so greater understanding of the underlying materials science, coupled with advances in fiber processing, is needed. More specifically, the semiconductor core fibers possess three performance-limiting characteristics that need to be addressed: (a) thermal expansion mismatches between crystalline core and glass cladding that lead to cracks, (b) the precipitation of oxide species in the core upon fiber cooling, which results from partial dissolution of the cladding glass by the core melt, and (c) polycrystallinity; all of which lead to scattering and increased transmission losses. This dissertation systematically studies each of these effects and develops both a fundamental scientific understanding of and practical engineering methods for reducing their impact. With respect to the thermal expansion mismatch and, in part, the dissolution of oxides, for the first time to our knowledge, oxide and non-oxide glass compositions are developed for a series of semiconductor cores based on two main design criteria: (1) matching the thermal expansion coefficient between semiconductor core and glass cladding to minimize cracking and (2) matching the viscosity-temperature dependences, such that the cladding glass draws into fiber at a temperature slightly above the melting point of the semiconductor in order to minimize dissolution and improve the fiber draw process. The x[Na 2O:Al2O3] + (100 - 2x)SiO2 glass compositional family was selected due to the ability to tailor the glass properties to match the aforementioned targets through slight variations in composition and adjusting the ratios of bridging and non-bridging oxygen

  9. Optical complexity in external cavity semiconductor laser

    NASA Astrophysics Data System (ADS)

    Rondoni, Lamberto; Ariffin, M. R. K.; Varatharajoo, Renuganth; Mukherjee, Sayan; Palit, Sanjay K.; Banerjee, Santo

    2017-03-01

    In this article, the window based complexity and output modulation of a time delayed chaotic semiconductor laser (SL) model has been investigated. The window based optical complexity (OC), is measured by introducing the recurrence sample entropy (SampEn). The analysis has been done without and in the presence of external noise. The significant changes in the dynamics can be observed under induced noise with weak strength. It has also been found that there is a strong positive correlation between the output power and the complexity of the system with various sets of parameters. The laser intensity, as well as the OC can be increased with the incremental noise strength and the associated system parameters. Thus, optical complexity quantifies the system dynamics and its instabilities, since is strongly correlated with the laser outputs. This analysis can be applied to measure the laser instabilities and modulation of output power.

  10. Optical dephasing in semiconductor mixed crystals

    NASA Astrophysics Data System (ADS)

    Siegner, U.; Weber, D.; Göbel, E. O.; Bennhardt, D.; Heuckeroth, V.; Saleh, R.; Baranovskii, S. D.; Thomas, P.; Schwab, H.; Klingshirn, C.; Hvam, J. M.; Lyssenko, V. G.

    1992-08-01

    The influence of disorder and localization on optical dephasing of excitons in the semiconductor mixed crystals CdS1-xSex and AlxGa1-xAs has been investigated by means of time-resolved four-wave mixing and photon echo experiments. A dephasing time of several hundreds of picoseconds is found for resonantly excited localized excitons in CdS1-xSex while the dephasing time in AlxGa1-xAs amounts to only a few picoseconds. In CdS1-xSex dephasing results mainly from hopping processes, i.e., exciton-phonon interaction. The contribution of disorder is negligible in terms of phase relaxation in CdS1-xSex. In contrast, in AlxGa1-xAs elastic disorder scattering yields an essential contribution to the dephasing rate. We present a theoretical model, which treats dephasing of optical excitations in a disordered semiconductor, including the influence of disorder as well as exciton-phonon interaction. On the base of this model, the experimentally observed differences in the dephasing behavior of excitons in CdS1-xSex and AlxGa1-xAs are related to the microscopic structure of the disorder potential and the mechanism of exciton localization.

  11. Optical Antenna Enhanced Spontaneous Emission in Semiconductors

    NASA Astrophysics Data System (ADS)

    Messer, Kevin James

    Optical antennas can be used to dramatically increase the rate that semiconductors spontaneously emit photons. While traditional LEDs are limited in bandwidth due to the "slow" rate of spontaneous emission, antenna-enhanced LEDs have the potential to be a fast, efficient, nanoscale light emitter. Traditionally, lasers have dominated LEDs as the emitter in optical interconnects due to a 200x speed advantage of stimulated emission over spontaneous emission. This paradigm may be reversed by coupling LEDs to optical antennas. In fact, antenna enhanced spontaneous emission can be faster than the fastest stimulated emission. Spontaneous emission originates from dipole fluctuations within the emitting material. The size of these fluctuations is much less than the wavelength of light emission, which leads to slow spontaneous emission. Coupling the material to an optical antenna corrects the size mismatch and improves the rate of radiation. An optical antenna circuit model is developed to predict the degree to which spontaneous emission can be enhanced. The circuit model presented in this dissertation shows that enhancement over 1000x is possible while still maintaining greater than 50% efficiency. The circuit model provides insight how to design optical antennas for coupling to dipole sources, for maximum enhancement, and for high efficiency. A method for incorporating the anomalous skin effect, often overlooked in metal optics, is provided. While FDTD/FEM simulations cannot include this effect due to its nonlocal nature, its impact can be examined through the use of the optical antenna circuit model. Analysis of the tradeoff between achieving large spontaneous emission enhancement and maintaining high efficiency leads to an ideal antenna feedgap size of 10nm. Experimental demonstration of spontaneous emission enhancement from InP coupled to an arch-dipole antenna is presented. Photoluminescence measurements show light emission from antenna-coupled InP over bare InP ridges

  12. Optical correlators with fast updating speed using photorefractive semiconductor materials

    NASA Technical Reports Server (NTRS)

    Gheen, Gregory; Cheng, Li-Jen

    1988-01-01

    The performance of an updatable optical correlator which uses a photorefractive semiconductor to generate real-time matched filters is discussed. The application of compound semiconductors makes possible high-speed operation and low optical input intensities. The Bragg diffraction is considered, along with the speed and power characteristics of these materials. Experimental results on photorefractive GaAs are presented.

  13. Optical and transport studies of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Shen, Shaoping

    In this thesis, various studies of magneto-transport and magneto-optical effects in III-V and II-V magnetic semiconductors are presented. The magneo-transport study involved the investigation of the anomalous Hall effect (AHE) in (Ga,Mn)As epilayers with low Mn concentration, grown in ultra-high vacuum molecular beam epitaxy (UHV MBE) chamber. Experiments were carried out in National High Magnetic Field Laboratory (NHMFL) on a series of samples with same Mn concentrations (x = 1.4%) but with various Be co-doping levels. We observed a sublinear relationship between the transverse resistivity rhoxy and the longitudinal resistivity rhoxx with a scaling factor n = 0.5, which has not been predicted theoretically. We also investigated the magneto-optical and magnetic properties of two quaternary diluted magnetic semiconductor (DMS) alloys, Cd1- x-yMnxCryTe and Cd1-x-yMnxCo yTe grown by the vertical Bridgman method, with a fixed Mn concentration x ˜ 0.37 and, respectively, with concentrations of Cr in the range 0 < y < 0.07 and Co in the range 0 < y < 0.009. The introduction of Cr and Co leads to very different behaviors, including the occurrence of ferromagnetic order in the case of Cd1-x-yMn xCryTe and several interesting optical transitions for Cd1-x-yMn xCoyTe. We discuss the possible origins of these observed behaviors. Last, we focused on DMS based nano-structures. Magnetic circular dichroism (MCD) studies have been carried out on a series of 1.4 nm thick CdSe:Mn nano-ribbons synthesized via colloidal chemical route. MCD spectra have been used for investigating the Zeeman splitting in these one-dimensional (1D) quantum confined diluted magnetic semiconductor nanostructures. In all samples, a strong MCD signal was found at about 2.9 eV due to a large Zeeman splitting of the exciton confined in the nano-ribbon. The Zeeman splitting is a result of strong sp-d exchange interaction between the electronic holes of the nano-ribbons and localized magnetic moment of Mn2

  14. Optical injection of spin currents in semiconductors

    NASA Astrophysics Data System (ADS)

    Bhat, Ravi D. R.; Sipe, John E.

    2000-03-01

    We propose a scheme in which electron spin currents can be optically injected in an unbiased bulk semiconductor. It relies on the interference between one- and two-photon absorption from a beam and its phase-related second harmonic. Previously, this interference has been shown to lead to an electron current that can be controlled by the relative phase of the two co-linearly polarized beams [1]. Here we show that, with co-circularly polarized beams, the resulting electron current carries a net spin, while with cross-polarized beams there is a spin current with no net magnetization and no net electron current. We characterize the spin currents using a Kane model of a direct bandgap semiconductor, although many of the results can be expected to hold if a more fundamental description is adopted. [1] A. Haché, Y. Kostoulas, R. Atanasov, J.L.P. Hughes, J.E. Sipe, and H.M. van Driel, Phys. Rev. Lett. 78, 306 (1997).

  15. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

    PubMed

    Wang, Ping; Yuan, Ying; Zhao, Chao; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Li, Xinzheng; Zhang, Xixiang; Shen, Bo

    2016-02-10

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

  16. Optical investigations of nanostructured oxides and semiconductors

    NASA Astrophysics Data System (ADS)

    Irvin, Patrick Richard

    This work is motivated by the prospect of building a quantum computer: a device that would allow physicists to explore quantum mechanics more deeply, and allow everyone else to keep their credit card numbers safe on the Internet. In this thesis we explore two classes of materials that are relevant to a proposed quantum computer architecture: oxides and semiconductors. Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. We investigate strained-SrTiO 3, which is ferroelectric at room-temperature, and a composite material of (Ba,Sr)TiO3 and MgO. We present optical techniques to measure electron spin dynamics with GHz dynamical bandwidth, transform-limited spectral selectivity, and phase-sensitive detection. We demonstrate this technique by measuring GHz-spin precession in n-GaAs. We also describe our efforts to optically probe InAs/GaAs and GaAs/AlGaAs quantum dots. Nanoscale devices with photonic properties have been the subject of intense research over the past decade. Potential nanophotonic applications include communications, polarization-sensitive detectors, and solar power generation. Here we show photosensitivity of a nanoscale detector written at the interface between two oxides.

  17. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  18. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  19. All optical logic operations using semiconductor optical amplifier based devices

    NASA Astrophysics Data System (ADS)

    Wang, Qiang

    High-speed optical processing technologies are essential for the construction of all-optical networks in the information era. In this Ph. D. thesis dissertation, essential mechanisms related to the semiconductor optical amplifier (SOA) based device such as the gain and phase dynamics when a short pulse in propagating inside SOA, and, all-optical Boolean function, XOR, AND and OR have been studied. In order to realize the all-optical logic using SOA, the nonlinear gain and phase dynamics in SOA need to be studied first. The experimental results of 10--90% gain recovery curve have been presented. The recovery time is related to the carrier lifetime of the SOA and it varies with gain compression and bias current. For pulse width of a few picosecond, intraband effects need to be considered. In the SOA, phase change is also induced when a short pulse is propagating inside SOA. Unlike the conventional way of estimating the phase shift using alpha factor, the maximum phase shift is obtained first, then the effective alpha factor is calculated. The experimental results of all optical Boolean function XOR and OR at 80 Gb/s are presented using SOA-MZI-DI and SOA-DI respectively. These are the highest operating speed that has been reported. The all optical AND operation at 40 Gb/s using SOA-MZI have also been reported here. The numerical simulation shows that the performance of these all-optical Boolean operations is limited by the carrier lifetime of the SOA. The Boolean functions are the first step towards all optical circuits. The designs of a parity checker and a pseudo-random binary sequence (PRBS) generator are demonstrated. The error analysis using quality factor and eye-diagram is also presented.

  20. Nonlinear optical properties of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ricard, Gianpiero Banfi Vittorio Degiorgio Daniel

    1998-05-01

    This review is devoted to the description of recent experimental results concerning the nonlinear optical properties of semiconductor-doped glasses SDGs with particular emphasis on the regime in which the energy of the incident photon is smaller than the energy gap. A considerable theoretical and experimental effort has been devoted in the last 10years to the fundamental aspects of quantumconfined structures, which have properties somewhat intermediate between the bulk crystals and atoms or molecules. From this point of view, SDGs represent an easily available test system, and optical techniques have been a major diagnostic tool. Luminescence and absorption spectroscopy were extensively used to characterize the electronic states. The experiments aimed at the measurement of the real and imaginary parts of the third-order optical susceptibility of SDGs below the bandgap are described in some detail, and the results obtained with different techniques are compared. Besides the intrinsic fast nonlinearity due to bound electrons, SDGs may present a larger but much slower nonlinearity due to the free carriers generated by two-photon absorption. This implies that experiments have to be properly designed for separation of the two effects. In this article we stress the importance of a detailed structural characterization of the samples. Knowledge of the volume fraction occupied by the nanocrystals is necessary in order to derive from the experimental data the intrinsic nonlinearity and to compare it with the bulk nonlinearity. We discuss recent experiments in which the dependence of the intrinsic nonlinearity on the crystal size is derived by performing, on the samples, measurements of the real part and imaginary part of the nonlinear optical susceptibility and measurements of crystal size and volume fraction. Structural characterization is of interest also for a better understanding of the physical processes underlying the growth of crystallites in SDGs. The average size of

  1. Surface plasmon based engineering of semiconductor nanowire optics

    NASA Astrophysics Data System (ADS)

    Aspetti, Carlos Octavio

    Semiconductor nanowires combine the material properties of semiconductors, which are ubiquitous in modern technology, with nanoscale dimensions and as such, are firmly poised at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics, in particular, arises from the increased interaction between light and matter that occurs when light is confined to dimensions below the size of its wavelength, in other words, when the nanowire serves as a light trapping optical cavity, which itself is also a source of light. Light confinement is taken to new extremes by coupling to the surface plasmon modes of metallic nanostructures, where light acquires mixed photonic and electronic character, and which may focus light to deep-subwavelength regions amenable to the dimensions of the electron wave. This thesis examines how the integration of "plasmonic optical cavities" and semiconductor nanowires leads to substantial modification (and enhancement) of the optical properties of the same, resulting in orders-of-magnitude faster and more efficient light emission with colors that may be tuned as a function of optical cavity geometry. Furthermore, this method is applied to nanowires composed of both direct and indirect bandgap semiconductor materials resulting in applications such as light emission from high-energy states in light emitting materials, highly enhanced broadband light emission from nominally non-light emitting (dark) materials, and broadband (and anomalous) enhancement of light absorption in various materials, all the while maintaining the unifying theme of employing integrated plasmonic-semiconductor optical cavities to achieve tailored optical properties. We begin with a review of the electromagnetic properties of optical cavities, surface plasmon-enhanced light emission in semiconductors, and the key physical properties of semiconductor nanowires. It goes without saying that this thesis work resides at the interface between optical

  2. Physical and chemical sensing using monolithic semiconductor optical transducers

    NASA Astrophysics Data System (ADS)

    Zappe, Hans P.; Hofstetter, Daniel; Maisenhoelder, Bernd; Moser, Michael; Riel, Peter; Kunz, Rino E.

    1997-09-01

    We present two monolithically integrated optical sensor systems based on semiconductor photonic integrated circuits. These compact, robust and highly functional transducers perform all necessary optical and electro-optical functions on-chip; extension to multi-sensor arrays is easily envisaged. A monolithic Michelson interferometer for high-resolution displacement measurement and a monolithic Mach-Zehnder interferometer for refractometry are discussed.

  3. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  4. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  5. Tapered rib fiber coupler for semiconductor optical devices

    DOEpatents

    Vawter, Gregory A.; Smith, Robert Edward

    2001-01-01

    A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

  6. Semiconductor optical fibres for infrared applications: A review

    NASA Astrophysics Data System (ADS)

    Peacock, Anna C.; Healy, Noel

    2016-10-01

    Over the last decade a new class of optical fibre has emerged that incorporates semiconductor materials within the core. These fibres are rich in optoelectronic functionality and offer extended transmission bands across the infrared spectral region so that their application potential is vast. Various fabrication methods have been developed to produce fibres with a range of unary and compound semiconductor core materials, which can be either amorphous or crystalline in form. This review discusses the main fabrication procedures and the infrared optical properties of the semiconductor fibres that have been fabricated to date, then takes a look at the future prospects of this exciting new technology.

  7. Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2014-02-01

    The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

  8. Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

  9. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  10. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  11. Optically induced current in molecular conduction nanojunctions with semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Fainberg, Boris D.; Seideman, Tamar

    2013-06-01

    We propose a new approach to coherent control of transport via molecular junctions, which bypasses several of the hurdles to experimental realization of optically manipulated nanoelectronics noted in the previous literature. The method is based on the application of intrinsic semiconductor contacts and optical frequencies below the semiconductor bandgap. To explore the coherently controlled electronic dynamics, we introduce a density matrix formalism that accounts for both the discrete molecular state and the semiconductor quasicontinua within a single master equation and offers analytically soluble limits for a single and two-site molecular bridge. Our analytical theory predicts a new phenomenon, referred to as coherent destruction of induced tunnelling, which extends the phenomenon of coherent destruction of tunnelling frequently discussed in the previous literature. Our results illustrate the potential of semiconductor contacts in coherent control of photocurrent.

  12. Chirp-enhanced fast light in semiconductor optical amplifiers.

    PubMed

    Sedgwick, F G; Pesala, Bala; Uskov, Alexander V; Chang-Hasnain, C J

    2007-12-24

    We present a novel scheme to increase the THz-bandwidth fast light effect in semiconductor optical amplifiers and increase the number of advanced pulses. By introducing a linear chirp to the input pulses before the SOA and recompressing at the output with an opposite chirp, the advance-bandwidth product reached 3.5 at room temperature, 1.55 microm wavelength. This is the largest number reported, to the best of our knowledge, for a semiconductor slow/fast light device.

  13. Thermally robust semiconductor optical amplifiers and laser diodes

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  14. Optically trapped and driven paddle-wheel

    NASA Astrophysics Data System (ADS)

    Asavei, Theodor; Nieminen, Timo A.; Loke, Vincent L. Y.; Stilgoe, Alexander B.; Bowman, Richard; Preece, Daryl; Padgett, Miles J.; Heckenberg, Norman R.; Rubinsztein-Dunlop, Halina

    2013-06-01

    We demonstrate the control and rotation of an optically trapped object, an optical paddle-wheel, with the rotation direction normal to the beam axis. This is in contrast to the usual situation where the rotation is about the beam axis. The paddle-wheel can be optically driven and moved to any position in the field of view of the microscope, which can be of interest for various biological applications where controlled application of a fluid flow is needed in a particular location and in a specific direction. This is of particular interest in signal transduction studies in cells, especially when a cell is flat and spread out on a surface.

  15. Integrated semiconductor twin-microdisk laser under mutually optical injection

    SciTech Connect

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  16. Optical and electronic properties of some semiconductors from energy gaps

    NASA Astrophysics Data System (ADS)

    Tripathy, Sunil K.; Pattanaik, Anup

    2016-03-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.

  17. Investigation of Nonlinear Optical Properties of Semiconductors.

    DTIC Science & Technology

    1984-02-23

    semiconductor or insula- tor . These include the photo-Hall effect, photoconductivity, recombination, trapping, lifetimes, all of which are important...field. But high-order nonlinear effects in semiconduc- tors have been showing up with surprising magnitudes in laboratories in Britain and the United...in Fig. 2. Resonant 0.5 - 1.5 x 1014 cm - 3 , with Zn or Cd the accep- structure is resolved down to fields as low as tor used for doping. Typical

  18. Review on optical and electrical properties of oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kim, Dong Lim; Kim, Hyun Jae

    2010-03-01

    Oxide semiconductors became one of the potential elements for large area electronics such as a channel for thin film transistors. Optical and electrical properties were modified by alloying or doping of several oxide materials; In2O3, ZnO, Ga2O3, and SnO2. The excellent properties achieved at the ternary or quaternary alloys could be explained by the role of each materials as a carrier controller, a conduction path, and etc. The metal oxide semiconductors were generally deposited by vacuum process but recently, alternative ways, like a sol-gel or an ink-jet printing, are suggested. In this review, diverse approaches on oxide semiconductors are shown, and an in-depth discussion of the optical and electrical properties alternation in metal oxide alloy fabricated by various methods is given.

  19. Semiconductor optoelectronic devices for free-space optical communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  20. Novel operation of semiconductor optical amplifier (SOA) for optoelectronic applications

    SciTech Connect

    DiJaili, S.P.

    1996-03-18

    A new effect is demonstrated that can enable all-optical logic at ultrafast speeds using semiconductor optical amplifier technology. This effect is called gain-dependent-time-shift. There may be many opportunities for growth in optical information processing systems using this effect. Modeling results were used to predict the existence of this effect. The experimental demonstration confirmed the existence of the gain-dependent-time-shift. It is predicted that an ultrafast all-optical switch with switching energies of several femtojoules, switching times of sub-100 fsec, low power, and monolithically integrable is possible.

  1. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  2. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  3. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  4. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  5. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  6. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  7. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  8. Invited Article: Four-mode semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wen, He; Alahmadi, Yousef; LiKamWa, Patrick; Xia, Cen; Carboni, Christian; Li, Guifang

    2016-10-01

    We demonstrate the first few-mode semiconductor optical amplifier (FM SOA) that supports up to four waveguide modes. We show that each of the modes are confined to the waveguide, overlapping the quantum wells with approximately the same amount, leading to equalized gain for each of the four waveguide modes.

  9. Linear semiconductor optical amplifiers for amplification of advanced modulation formats.

    PubMed

    Bonk, R; Huber, G; Vallaitis, T; Koenig, S; Schmogrow, R; Hillerkuss, D; Brenot, R; Lelarge, F; Duan, G-H; Sygletos, S; Koos, C; Freude, W; Leuthold, J

    2012-04-23

    The capability of semiconductor optical amplifiers (SOA) to amplify advanced optical modulation format signals is investigated. The input power dynamic range is studied and especially the impact of the SOA alpha factor is addressed. Our results show that the advantage of a lower alpha-factor SOA decreases for higher-order modulation formats. Experiments at 20 GBd BPSK, QPSK and 16QAM with two SOAs with different alpha factors are performed. Simulations for various modulation formats support the experimental findings.

  10. Hydrodynamic synchronisation of optically driven rotors

    NASA Astrophysics Data System (ADS)

    Debono, Luke J.; Box, Stuart; Phillips, David B.; Simpson, Stephen H.; Hanna, Simon

    2015-08-01

    Hydrodynamic coupling is thought to play a role in the coordinated beating of cilia and flagella, and may inform the future design of artificial swimmers and pumps. In this study, optical tweezers are used to investigate the hydrodynamic coupling between a pair of driven oscillators. The theoretical model of Lenz and Ryskin [P. Lenz and A. Ryskin, Phys. Biol. 3, 285{294 (2006)] is experimentally recreated, in which each oscillator consists of a sphere driven in a circular trajectory. The optical trap position is maintained ahead of the sphere to provide a tangential driving force. The trap is also moved radially to harmonically constrain the sphere to the circular trajectory. Analytically, it has been shown that two oscillators of this type are able to synchronise or phase-lock under certain conditions. We explore the interplay between synchronisation mechanisms and find good agreement between experiment, theory and Brownian dynamics simulations.

  11. Nonlinear optical studies of relaxation in semiconductor microstructures

    NASA Astrophysics Data System (ADS)

    Remillard, Jeffrey Thomas

    1990-11-01

    Exposing a semiconductor to optical radiation near the fundamental band gap results in the creation of populations or elementary excitations including electrons, holes, and excitons, and also results in the creation of a superposition state between the ground and excited state of the solid. The relaxation of optically generated excitons and carriers in semiconductor microstructures was studied using four wave mixing (FWM) spectroscopy. The systems studied include CdSSe microcrystallite doped glasses and GaA/AlGaAs multiple quantum well structures (MQWS). First, the nonlinear optical response of simple two level systems is examined in order to provide insight into the types of line shapes expected from semiconductors. It is shown that the line shape is strongly dependent on how the system is coupled to the reservoir and the consequences of coupling to a reservoir are examined in a FWM measurement made in atomic sodium. The first semiconductor system studied is CdSSe microcrystallite doped glass. This system is shown to have a very slow component to the nonlinear response which has an optical intensity dependence and temperature dependence which suggests that the FWM response in these materials is trap mediated. Room temperature FWM measurements in GaAs MQWS enables the measurement of the carrier recombination time and the ambipolar diffusion coefficient. Using the technique of correlated optical fields, a slow component to the nonlinear response was measured showing an interference profile which suggests a possible shift of the exciton resonance due to the optically generated carriers. At low temperatures, measurements of the exciton line shape and relaxation time were made and evidence for exciton spectral diffusion was found. The low temperature line shapes can be qualitatively reproduced using Modified Optical Bloch equations which include the effects of spectral diffusion.

  12. Nonlinear optical susceptibilities of semiconductor quantum dot - metal nanoparticle hybrids

    NASA Astrophysics Data System (ADS)

    Terzis, A. F.; Kosionis, S. G.; Boviatsis, J.; Paspalakis, E.

    2016-03-01

    We theoretically study nonlinear optical effects of a semiconductor quantum dot and a spherical metal nanoparticle coupled via long-range Coulomb interaction. We solve the relevant density matrix equations in steady state and use proper perturbation theory to obtain closed-form analytical expressions for the nonlinear susceptibilities of the quantum dot, the metal nanoparticle, and the entire coupled system, up to fifth order. We also investigate the influence of the material of the semiconductor and the impact of the interparticle distance on the form of the spectra of the nonlinear susceptibilities.

  13. Spectroscopy of intraband optical transitions in anisotropic semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Turkov, Vadim K.; Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Baranov, Alexander V.; Fedorov, Anatoly V.

    2013-09-01

    We propose a new type of optical spectroscopy of anisotropic semiconductor nanocrystals, which is based on the welldeveloped stationary pump-probe technique, where the pump and probe fields are absorbed upon, respectively, interband and intraband transitions of the nanocrystals' electronic subsystem. We develop a general theory of intraband absorption based on the density matrix formalism. This theory can be applied to study degenerate eigenstates of electrons in semiconductor nanocrystals of different shapes and dimentions. We demonstrate that the angular dependence of intraband absorption by nonspherical nanocrystals enables investigating their shape and orientation, as well as the symmetry of quantum states excited by the probe field and selection rules of electronic transitions.

  14. Integrated superconducting detectors on semiconductors for quantum optics applications

    NASA Astrophysics Data System (ADS)

    Kaniber, M.; Flassig, F.; Reithmaier, G.; Gross, R.; Finley, J. J.

    2016-05-01

    Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit nonclassical states of light for distributed photon-based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realize highly efficient and ultra-fast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20 % for ~4 nm thin films and single-photon timing resolutions <72 ps. We discuss the integration of such detectors into quantum dot-loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a linewidth <15 μeV displaced by 1 mm from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported.

  15. Optical response from lenslike semiconductor nipple arrays

    NASA Astrophysics Data System (ADS)

    Wu, H.-M.; Lai, C.-M.; Peng, L.-H.

    2008-11-01

    The authors reported the use of recessive size reduction in self-assembled polystyrene sphere mask with anisotropic etching to form lenslike nipple arrays onto the surface of silicon and gallium nitride. These devices are shown to exhibit a filling factor near to an ideal close-packed condition and paraboloidlike etch profile with slope increased proportionally to the device aspect ratio. Specular reflectivity of less than 3% was observed over the visible spectral range for the 0.35-μm-period nipple-lens arrays. Using two-dimensional rigorous coupled-wave analysis, the latter phenomenon can be ascribed to a gradual index matching mechanism accessed by a high surface-coverage semiconductor nipple array structure.

  16. Semiconductor nanocrystals for novel optical applications

    NASA Astrophysics Data System (ADS)

    Moon, Jong-Sik

    Inspired by the promise of enhanced spectral response, photorefractive polymeric composites photosensitized with semiconductor nanocrystals have emerged as an important class of materials. Here, we report on the photosensitization of photorefractive polymeric composites at visible wavelengths through the inclusion of narrow band-gap semiconductor nanocrystals composed of PbS. Through this approach, internal diffraction efficiencies in excess of 82%, two-beam-coupling gain coefficients in excess of 211 cm-1, and response times 34 ms have been observed, representing some of the best figures-of-merit reported on this class of materials. In addition to providing efficient photosensitization, however, extensive studies of these hybrid composites have indicated that the inclusion of nanocrystals also provides an enhancement in the charge-carrier mobility and subsequent reduction in the photorefractive response time. Through this approach with PbS as charge-carrier, unprecedented response times of 399 micros were observed, opening the door for video and other high-speed applications. It is further demonstrated that this improvement in response time occurs with little sacrifice in photorefractive efficiency and with internal diffraction efficiencies of 72% and two- beam-coupling gain coefficients of 500 cm-1 being measured. A thorough analysis of the experimental data is presented, supporting the hypothesized mechanism of the enhanced charge mobility without the accompaniment of superfluous traps. Finally, water soluble InP/ZnS and CdSe/ZnS quantum dots interacted with CPP and Herceptin to apply them as a bio-maker. Both of quantum dots showed the excellent potential for use in biomedical imaging and drug delivery applications. It is anticipated that these approaches can play a significant role in the eventual commercialization of these classes of materials.

  17. Optical logic and signal processing using a semiconductor laser diode-based optical bistability device

    NASA Astrophysics Data System (ADS)

    Zhang, Yuancheng; Song, Qian; He, Shaowei

    1995-02-01

    Using an optical fibre-coupled semiconductor laser diode OBD with output feedback pumping operation in 5 modes (differential gain, bistability, zero-bias, inverted differential gain, and inverted bistability) has been realized respectively, and 5 elementary optical logic functions (AND, OR, NOT, NAND, and NOR) and some optical signal processing such as limiting, reshaping, and triggering have been implemented.

  18. Stimulated emission on impurity – band optical transitions in semiconductors

    SciTech Connect

    Bekin, N A; Shastin, V N

    2015-02-28

    This paper examines conditions for population inversion and amplification in the terahertz range using impurity – band electron transitions in semiconductors and semiconductor structures. Our estimates indicate that stimulated emission on such transitions under optical excitation of impurities can be obtained in a semiconductor with a sufficiently high doping level if electron heating is restricted. At a CO{sub 2} laser pump power density near 0.2 MW cm{sup -2} (photon energy of 117 meV), the gain in n-GaAs may exceed the loss by 50 cm{sup -1} provided the electron gas temperature does not exceed 40 K. We analyse the influence of the carrier effective mass and doping compensation on the gain coefficient and briefly discuss the use of resonance tunnelling for obtaining stimulated emission on impurity – band transitions in quantum cascade heterostructures. (terahertz radiation)

  19. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOEpatents

    Hui, Rongqing; Jiang,Hong-Xing; Lin, Jing-Yu

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  20. Optical-Microwave Interactions in Semiconductor Devices.

    DTIC Science & Technology

    1980-02-01

    frequency response, Liquid phase epitaxial crystal growth, Optical waveguide, Photoconductivity, Traps. 1ABSTRACT (Contirniv an, reverse side If neceaa..3...of the sensitivity for a photoconductor has been 2 given by DiDomenico and Svelto. The change in photocurrent due to optical illumination is qq AT AI...at dc ( 0 tr where 0A is the number of photons /sec (uniform illumination is assumed). The sensitivity can be written as AI oAh = o S° ~ L~ (2) 0oA

  1. Testing methodologies and systems for semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  2. Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

    SciTech Connect

    Klimov, V.; McBranch, D.; Schwarz, C.

    1998-08-10

    Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

  3. Coherently driven semiconductor quantum dot at a telecommunication wavelength.

    PubMed

    Takagi, Hiroyuki; Nakaoka, Toshihiro; Watanabe, Katsuyuki; Kumagai, Naoto; Arakawa, Yasuhiko

    2008-09-01

    We proposed and demonstrate use of optical driving pulses at a telecommunication wavelength for exciton-based quantum gate operation. The exciton in a self-assembled quantum dot is coherently manipulated at 1.3 microm through Rabi oscillation. The telecom-band exciton-qubit system incorporates standard optical fibers and fiber optic devices. The coherent manipulation of the two-level system compatible with flexible and stable fiber network paves the way toward practical optical implementation of quantum information processing devices.

  4. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  5. Dephasing of optically generated electron spins in semiconductors

    NASA Astrophysics Data System (ADS)

    Idrish Miah, M.

    2010-09-01

    Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub- μs and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

  6. Excitability in a quantum dot semiconductor laser with optical injection.

    PubMed

    Goulding, D; Hegarty, S P; Rasskazov, O; Melnik, S; Hartnett, M; Greene, G; McInerney, J G; Rachinskii, D; Huyet, G

    2007-04-13

    We experimentally analyze the dynamics of a quantum dot semiconductor laser operating under optical injection. We observe the appearance of single- and double-pulse excitability at one boundary of the locking region. Theoretical considerations show that these pulses are related to a saddle-node bifurcation on a limit cycle as in the Adler equation. The double pulses are related to a period-doubling bifurcation and occur on the same homoclinic curve as the single pulses.

  7. Refractory period of an excitable semiconductor laser with optical injection

    NASA Astrophysics Data System (ADS)

    Garbin, B.; Dolcemascolo, A.; Prati, F.; Javaloyes, J.; Tissoni, G.; Barland, S.

    2017-01-01

    Injection-locked semiconductor lasers can be brought to a neuronlike excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.

  8. Donor-driven spin relaxation in multivalley semiconductors.

    PubMed

    Song, Yang; Chalaev, Oleg; Dery, Hanan

    2014-10-17

    The observed dependence of spin relaxation on the identity of the donor atom in n-type silicon has remained without explanation for decades and poses a long-standing open question with important consequences for modern spintronics. Taking into account the multivalley nature of the conduction band in silicon and germanium, we show that the spin-flip amplitude is dominated by short-range scattering off the central-cell potential of impurities after which the electron is transferred to a valley on a different axis in k space. Through symmetry arguments, we show that this spin-flip process can strongly affect the spin relaxation in all multivalley materials in which time-reversal cannot connect distinct valleys. From the physical insights gained from the theory, we provide guidelines to significantly enhance the spin lifetime in semiconductor spintronics devices.

  9. Static gain saturation in quantum dot semiconductor optical amplifiers.

    PubMed

    Meuer, Christian; Kim, Jungho; Laemmlin, Matthias; Liebich, Sven; Capua, Amir; Eisenstein, Gadi; Kovsh, Alexey R; Mikhrin, Sergey S; Krestnikov, Igor L; Bimberg, Dieter

    2008-05-26

    Measurements of saturated amplified spontaneous emission-spectra of quantum dot semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot ground state population from excited states. This saturation behavior is perfectly modeled by a rate equation model. We examined experimentally the dependence of saturation on the drive current and the saturating optical pump power as well as on the pump wavelength. A coherent noise spectral hole is observed with which we assess dynamical properties and propose optimization of the SOA operating parameters for high speed applications.

  10. Sensitivity of quantum-dot semiconductor lasers to optical feedback.

    PubMed

    O'Brien, D; Hegarty, S P; Huyet, G; Uskov, A V

    2004-05-15

    The sensitivity of quantum-dot semiconductor lasers to optical feedback is analyzed with a Lang-Kobayashi approach applied to a standard quantum-dot laser model. The carriers are injected into a quantum well and are captured by, or escape from, the quantum dots through either carrier-carrier or phonon-carrier interaction. Because of Pauli blocking, the capture rate into the dots depends on the carrier occupancy level in the dots. Here we show that different carrier capture dynamics lead to a strong modification of the damping of the relaxation oscillations. Regions of increased damping display reduced sensitivity to optical feedback even for a relatively large alpha factor.

  11. Theory of the Electronic and Optical Properties of Semiconductor Heterostructures

    DTIC Science & Technology

    1990-01-01

    March, 1990. 2. Theor of Optically-Induced Screening of Piezoelectric Fields in Strained H I I Quntum Wells D. A. Broido, B. V. Shanabrook and D. Gammon, Fall, 1990 Meeting of the Materials Research Society, Boston. 10 ...AD-A231 438 Final Technical Report for ONR Contract #V00014-89-J. 1786 entitled Theory of the Electronic and Optical Properties of Semiconductor... fields in each layer as a consequence of the piezoelectric effect.1 2 It is well known that the strain shifts the conduction and valence band energies

  12. Transient optical properties of semiconductors under femtosecond x-ray irradiation

    NASA Astrophysics Data System (ADS)

    Tkachenko, Victor; Medvedev, Nikita; Li, Zheng; Piekarz, Przemysław; Ziaja, Beata

    2016-04-01

    Semiconductors under femtosecond x-ray irradiation are transiently excited to nonequilibrium states. This can lead to observable material modifications. During the excitation and relaxation dynamics, optical properties of the solid are changing, affected by both transient electron excitation as well as the evolution of the atomic structure. In this paper we apply a unified hybrid model to trace these two effects. Transient evolution of the optical properties is calculated within the transferable tight-binding approach. The presented methodology of calculation of the complex dielectric function proves to be capable of describing changes in the optical parameters during the phase transitions, when the solids are driven out of equilibrium by intense laser pulses, in a reasonable agreement with experiments.

  13. Progress of the quantum nano-optics of semiconductors group at Optical Sciences

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky; Gehl, Michael R.; Zandbergen, Sander; Keiffer, Patrick; Sears, Jasmine; Khitrova, Galina

    2014-09-01

    The history of semiconductor quantum optics group in the College of Optical Sciences will be discussed. The work from planar microcavities including VCSELs, photonic crystal cavities leading to the observation of strong-coupling between an L3 cavity and a quantum dot, and now metallic cavities coupled to quantum wells and quantum dots will be described.

  14. Petahertz optical drive with wide-bandgap semiconductor

    NASA Astrophysics Data System (ADS)

    Mashiko, Hiroki; Oguri, Katsuya; Yamaguchi, Tomohiko; Suda, Akira; Gotoh, Hideki

    2016-08-01

    High-speed photonic and electronic devices at present rely on radiofrequency electric fields to control the physical properties of a semiconductor, which limits their operating speed to terahertz frequencies (1012 Hz ref. ). Using the electric field from intense light pulses, however, could extend the operating frequency into the petahertz regime (1015 Hz ref. ). Here we demonstrate optical driving at a petahertz frequency in the wide-bandgap semiconductor gallium nitride. Few-cycle near-infrared pulses are shown to induce electric interband polarization though a multiphoton process. Dipole oscillations with a periodicity of 860 as are revealed in the gallium nitride electron and hole system by using the quantum interference between the two transitions from the valence and conduction band states, which are probed by an extremely short isolated attosecond pulse with a coherent broadband spectrum. In principle, this shows that the conductivity of the semiconductor can be manipulated on attosecond timescales, which corresponds to instantaneous light-induced switching from insulator to conductor. The resultant dipole frequency reaches 1.16 PHz, showing the potential for future high-speed signal processing technologies based on wide-bandgap semiconductors.

  15. Nonlinear Optical Studies of Relaxation in Semiconductor Microstructures.

    NASA Astrophysics Data System (ADS)

    Remillard, Jeffrey Thomas

    The purpose of this research is to study the relaxation of optically generated excitons and carriers in semiconductor microstructures using four wave mixing (FWM) spectroscopy. The systems studied include CdSSe microcrystallite doped glasses and GaAs/AlGaAs multiple quantum well structures (MQWS). Exposing a semiconductor to optical radiation near the fundamental band gap results in the creation of populations of elementary excitations including electrons, holes, and excitons, and also results in the creation of a superposition state between the ground and excited state of the solid. The work in this dissertation examines the relaxation of the populations of elementary excitations and the relaxation of the coherence between the ground and excited state using four wave mixing spectroscopy. First, the nonlinear optical response of simple two level systems is examined in order to provide insight into the types of line shapes expected from semiconductors. It is shown that the line shape is strongly dependent on how the system is coupled to the reservoir and the consequences of coupling to a reservoir are examined in a FWM measurement made in atomic sodium. The first semiconductor system studied is CdSSe microcrystallite doped glass. This system is shown to have a very slow component to the nonlinear response which has a optical intensity dependence and temperature dependence which suggests that the FWM response in these materials is trap mediated. Room temperature FWM measurements in GaAs MQWS enables the measurement of the carrier recombination time and the ambipolar diffusion coefficient. Using the technique of correlated optical fields, a slow component to the nonlinear response was measured showing an interference profile which suggests a possible shift of the exciton resonance due to the optically generated carriers. At low temperatures (2-20 K), measurements of the exciton line shape and relaxation time were made and evidence for exciton spectral diffusion was

  16. Optical band gaps of organic semiconductor materials

    NASA Astrophysics Data System (ADS)

    Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2016-08-01

    UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

  17. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1988-01-01

    Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

  18. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1987-01-01

    A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

  19. Density driven structural transformations in amorphous semiconductor clathrates

    SciTech Connect

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with the consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.

  20. Density driven structural transformations in amorphous semiconductor clathrates

    DOE PAGES

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; ...

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with themore » consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.« less

  1. Adaptive optics assisted reconfigurable liquid-driven optical switch

    NASA Astrophysics Data System (ADS)

    Fuh, Yiin-Kuen; Huang, Wei-Chi

    2013-07-01

    This study demonstrates a mechanical-based, liquid-driven optical switch integrated with adaptive optics and a reconfigurable black liquid (dye-doped liquid). The device aperture can be continuously tuned between 0.6 and 6.9 mm, precisely achieved by a syringe pump for volume control. Adaptive optics (AO) capability and possible enhancement of the lost power intensity of the ink-polluted glass plate have also been experimentally investigated. While measuring power intensity with/without AO indicates only a marginal difference of ˜1%, a significant difference of 3 s in the response characteristic of "switching on" time can be observed. An extremely high contrast ratio of ˜105 for a red-colored light is achieved.

  2. Metal-optic and Plasmonic Semiconductor-based Nanolasers

    NASA Astrophysics Data System (ADS)

    Lakhani, Amit Manmohan

    Over the past few decades, semiconductor lasers have relentlessly followed the path towards miniaturization. Smaller lasers are more energy efficient, are cheaper to make, and open up new applications in sensing and displays, among many other things. Yet, up until recently, there was a fundamental problem with making lasers smaller: purely semiconductor lasers couldn't be made smaller than the diffraction limit of light. In recent years, however, metal-based lasers have been demonstrated in the nanoscale that have shattered the diffraction limit. As optical materials, metals can be used to either reflect light (metal-optics) or convert light to electrical currents (plasmonics). In both cases, metals have provided ways to squeeze light beyond the diffraction limit. In this dissertation, I experimentally demonstrated one nanolaser based on plasmonic transduction and another laser based on metal-optic reflection. To create coherent plasmons, I designed a nanolaser based on a plasmonic bandgap defect state inside a surface plasmonic crystal. In a one-dimensional periodic semiconductor beam, I was able to confine surface plasmons by interrupting the periodicity of the crystal. These confined surface plasmons then underwent laser oscillations in effective mode volumes as small as 0.007 cubic wavelengths. At this electromagnetic volume, energy was squeezed 10 times smaller than those possible in similar photonic crystals that do not utilize metal. This demonstration should pave the way for achieving engineered nanolasers with deep-subwavelength mode volumes and enable plasmonic crystals to become attractive platforms for designing plasmons. After achieving large reductions in electromagnetic mode volumes, I switched to a metal-optics-based nanolaser design to further reduce the physical volumes of small light sources. The semiconductor nanopatch laser achieved laser oscillations with subwavelength-scale physical dimensions (0.019 cubic wavelengths) and effective mode

  3. Optical switching of nuclear spin-spin couplings in semiconductors.

    PubMed

    Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

    2011-07-05

    Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear-spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings.

  4. Integrated semiconductor optical sensors for cellular and neural imaging.

    PubMed

    Levi, Ofer; Lee, Thomas T; Lee, Meredith M; Smith, Stephen J; Harris, James S

    2007-04-01

    We review integrated optical sensors for functional brain imaging, localized index-of-refraction sensing as part of a lab-on-a-chip, and in vivo continuous monitoring of tumor and cancer stem cells. We present semiconductor-based sensors and imaging systems for these applications. Measured intrinsic optical signals and tissue optics simulations indicate the need for high dynamic range and low dark-current neural sensors. Simulated and measured reflectance spectra from our guided resonance filter demonstrate the capability for index-of-refraction sensing on cellular scales, compatible with integrated biosensors. Finally, we characterized a thermally evaporated emission filter that can be used to improve sensitivity for in vivo fluorescence sensing.

  5. Optical activity of semiconductor nanocrystals with ionic impurities

    NASA Astrophysics Data System (ADS)

    Tepliakov, N. V.; Baimuratov, A. S.; Gun'ko, Yu. K.; Baranov, A. V.; Fedorov, A. V.; Rukhlenko, I. D.

    2017-01-01

    The strength of the enantioselective interaction of chiral semiconductor nanocrystals with circularly polarized light can be varied over a wide range, which finds a series of important applications in modern nanophotonics. As a rule, this interaction is relatively weak, because the dimension of nanocrystals is much smaller than the wavelength of the optical radiation, and the optical activity of nanocrystals is rather low. In this work, we show theoretically that, by applying ion doping, one can significantly enhance the optical activity of nanocrystals and to vary its magnitude over a wide range of values and over a wide range of frequencies. We show that, by precisely arranging impurities inside nanocrystals, one can optimize the rotatory strengths of intraband transitions, making them 100 times stronger than typical rotatory strengths of small chiral molecules.

  6. Laser with optically driven Q-switch

    NASA Technical Reports Server (NTRS)

    Hemmati, Hamid (Inventor)

    1993-01-01

    An optically driven interactive Q-switch, i.e., a Q-switch that responds to a short pulse of light, for example, from external light-emitting diodes (LEDs) or diode lasers, is provided for producing an output laser pulse from electronic energy stored in a laser medium. Q-switching is thus achieved on demand by electrically pulsing the light source to produce a pulse of light directed onto a Q-switch medium in the laser cavity. Electronic control of the light pulse from the external source will thus provide not only efficient Q-switching frequency but also independent control of output laser pulse width with a fast rise time for each output laser pulse.

  7. Laser with optically driven Q-switch

    NASA Technical Reports Server (NTRS)

    Hemmati, Hamid (Inventor)

    1995-01-01

    An optically driven interactive Q-switch, i.e., a Q-switch that responds to a short pulse of light, for example, from external light-emitting diodes (LED's) or diode lasers, is provided for producing an output laser pulse from electronic energy stored in a laser medium. Q-switching is thus achieved on demand by electrically pulsing the light source to produce a pulse of light directed onto a Q-switch medium in the laser cavity. Electronic control of the light pulse from the external source will thus provide not only efficient Q-switching frequency but also independent control of output laser pulse width with a fast rise time for each output laser pulse.

  8. Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions.

    PubMed

    Celano, Thomas A; Hill, David J; Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; McBride, James R; Cahoon, James F

    2016-08-10

    Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds.

  9. Nonlinear Optical Parameters of Magnetoactive Semiconductor-Plasmas

    NASA Astrophysics Data System (ADS)

    Singh, M.; Joseph, D.; Duhan, S.

    The nonlinear optical parameters (absorption coefficient and refractive index) of semiconductor-plasmas subjected to a transverse magnetic field have been investigated analytically. By employing the coupled-mode scheme, an expression of third-order optical susceptibility and resultant nonlinear absorption and refractive index of the medium are obtained. The analysis has been applied to both cases, viz., centrosymmetric (β = 0) and noncentrosymmetric (β ≠ 0) in the presence of magnetic field. The numerical estimates are made for InSb crystal at liquid nitrogen temperature duly irradiated by a 10-nanosecond pulsed 10.6 μm CO2 laser. The influence of doping concentration and magnetic field on both the nonlinear absorption and refractive index has been explored, and the results are found to be well in agreement with theory and experiment. Analysis further establishes that absorption coefficient and refractive index can be controlled with precision in semiconductors by the proper selection of doping concentration and an external magnetic field, and hence these media may be used for fabrication of fast cubic nonlinear optical devices under off-resonant transition regime.

  10. Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

    PubMed

    Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

    2007-07-01

    We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

  11. Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications

    NASA Technical Reports Server (NTRS)

    Tratt, David M.; Mansour, Kamjou; Menzies, Robert T.; Qiu, Yueming; Forouhar, Siamak; Maker, Paul D.; Muller, Richard E.

    2001-01-01

    The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch

  12. Electronic structure and optical transition of semiconductor nanocrystallites

    NASA Astrophysics Data System (ADS)

    Xia, Jian-Bai; Cheah, K. W.

    1997-11-01

    The electronic states and optical transition properties of three semiconductor nanocrystallites, Si, GaAs, and ZnSe, are studied using the empirical pseudopotential homojunction model. The energy levels, wave functions, optical transition matrix elements, and lifetimes are obtained for quadratic prisms with widths from 11 to 27 Å. It is found that the three kinds of prism have different quantum confinement properties. For Si prisms, the energy gaps vary with the equivalent diameter d as 0953-8984/9/45/013/img1, in agreement with previous theoretical calculations. For the same d the energy gaps are slightly different for different shapes: large for the prism with large aspect ratio; small for the prism with small aspect ratio. The exponent of d depends on the boundary barrier height, i.e. the extent of penetration of the wave function into the vacuum. The wave function of the LUMO states consists mainly of bulk X states. The optical transition matrix elements are much smaller than those of direct transition, and increase with decreasing width. The corresponding lifetimes decrease from the millisecond range to the microsecond range, and the change is abrupt depending on the symmetry and composition of the wave function of the LUMO and HOMO states. For GaAs prisms, the energy gap is also pseudo-direct, but the optical transition matrix elements are larger than those of Si prisms by two orders of magnitude for the same width. For ZnSe prisms, the energy gap is always direct, and the optical transition matrix elements are comparable with those of direct energy gap bulk semiconductors. In some cases the symmetry of the HOMO state changes, resulting in an abrupt decrease of the transition matrix element. The calculated lifetimes of the Si prism and the positions of PL peaks are in agreement with experimental results for porous Si.

  13. Solitary and coupled semiconductor ring lasers as optical spiking neurons.

    PubMed

    Coomans, W; Gelens, L; Beri, S; Danckaert, J; Van der Sande, G

    2011-09-01

    We theoretically investigate the possibility of generating pulses in an excitable (asymmetric) semiconductor ring laser (SRL) using optical trigger pulses. We show that the phase difference between the injected field and the electric field inside the SRL determines the direction of the perturbation in phase space. Due to the folded shape of the excitability threshold, this has an important influence on the ability to cross it. A mechanism for exciting multiple consecutive pulses using a single trigger pulse (i.e., multipulse excitability) is revealed. We furthermore investigate the possibility of using asymmetric SRLs in a coupled configuration, which is a first step toward an all-optical neural network using SRLs as building blocks.

  14. Solitary and coupled semiconductor ring lasers as optical spiking neurons

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Gelens, L.; Beri, S.; Danckaert, J.; van der Sande, G.

    2011-09-01

    We theoretically investigate the possibility of generating pulses in an excitable (asymmetric) semiconductor ring laser (SRL) using optical trigger pulses. We show that the phase difference between the injected field and the electric field inside the SRL determines the direction of the perturbation in phase space. Due to the folded shape of the excitability threshold, this has an important influence on the ability to cross it. A mechanism for exciting multiple consecutive pulses using a single trigger pulse (i.e., multipulse excitability) is revealed. We furthermore investigate the possibility of using asymmetric SRLs in a coupled configuration, which is a first step toward an all-optical neural network using SRLs as building blocks.

  15. Optical switching of polariton density patterns in a semiconductor microcavity

    NASA Astrophysics Data System (ADS)

    Kwong, N. H.; Tsang, C. Y.; Luk, Samuel M. H.; Tse, Y. C.; Chan, Chris K. P.; Lewandowski, P.; Leung, P. T.; Schumacher, Stefan; Binder, R.

    2017-03-01

    Phase-conjugate scattering can trigger modulational instabilities in a fluid of exciton-polaritons created in a pumped semiconductor quantum-well microcavity. These instabilities can settle into density patterns, e.g. hexagons and stripes, which produce corresponding patterns in the emitted light. The density patterns can be switched by relatively weak control optical beams. This paper reviews progress in our theoretical understanding of the physical processes that regulate the competitions among various patterns and drive the optical switching. Simulation results of pattern switching using a microscopic model of polariton dynamics are shown, and the mechanisms underlying competitions and switching are analyzed using reduced models that restrict the polariton motions to a limited number of relevant modes. We also briefly indicate the effects of the spin dependence of the polariton dynamics on the patterns.

  16. Quantum of optical absorption in two-dimensional semiconductors.

    PubMed

    Fang, Hui; Bechtel, Hans A; Plis, Elena; Martin, Michael C; Krishna, Sanjay; Yablonovitch, Eli; Javey, Ali

    2013-07-16

    The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, AQ = πα/nc for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and nc is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III-V quantum wells and graphene.

  17. All-optical sampling based on quantum-dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Chen; Wang, Yongjun; Wang, Lina

    2016-11-01

    In recent years, the all-optical signal processing system has become a hot research field of optical communication. This paper focused on the basic research of quantum-dot (QD) semiconductor optical amplifier (SOA) and studied its practical application to all-optical sampling. A multi-level dynamic physical model of QD-SOA is established, and its ultrafast dynamic characteristics are studied through theoretical and simulation research. For further study, an all-optical sampling scheme based on the nonlinear polarization rotation (NPR) effect of QD-SOA is also proposed. This paper analyzed the characteristics of optical switch window and investigated the influence of different control light pulses on switch performance. The presented optical sampling method has an important role in promoting the improvement of all-optical signal processing technology.

  18. Nonlinear optical properties of atomic vapor and semiconductors

    SciTech Connect

    Kim, Doseok

    1997-05-01

    This thesis contains the study of highly forbidden resonant second harmonic generation (SHG) in atomic potassium vapor using tunable picosecond pulses. Various output characteristics of vapor SHG have been investigated including the input intensity dependence, potassium vapor density dependence, buffer gas pressure dependence, and spatial profile. Recently, the discovery of new nonlinear optical crystals such as barium borate (β-BaB2O4, BBO) and lithium borate (LiB3O5, LBO) has greatly improved the performance of a tunable coherent optical devices based on optical parametric generation and amplification. In the second part of this thesis, a homebuilt picosecond optical parametric generator/amplifier (OPG/OPA) system is described in detail, including its construction details and output characteristics. This laser device has found many useful applications in spectroscopic studies including surface nonlinear optical spectroscopy via sum-frequency generation (SFG). The last part of this thesis reports studies on multiphoton-excited photoluminescence from porous silicon and GaN. Multiphoton excitation and photoluminescence can give numerous complementary information about semiconductors not obtainable with one-photon, above-bandgap excitation.

  19. Photonic processing and realization of an all-optical digital comparator based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Singh, Simranjit; Kaur, Ramandeep; Kaler, Rajinder Singh

    2015-01-01

    A module of an all-optical 2-bit comparator is analyzed and implemented using semiconductor optical amplifiers (SOAs). By employing SOA-based cross phase modulation, the optical XNOR logic is used to get an A=B output signal, where as AB¯ and A¯B> logics operations are used to realize A>B and Aoptical high speed networks and computing systems.

  20. A scheme of developing frequency encoded tristate-optical logic operations using semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Garai, Sisir Kumar

    2010-03-01

    The ever increasing demand for very fast and agile optical networks requires very fast execution of different optical and logical operations as well as large information handling capacities at the same time. In conventional binary logic based operations the information is represented by two distinct states only (0 and 1 state). It limits the large information handling capacity and speed of different arithmetic and optical logic operations. Tristate based logic operations can be accommodated with optics successfully in data processing, as this type of operation can enhance the speed of operation as well as increase the information handling capacity. Here in this communication the author proposes a new method to implement all-optical different logic gates with tristate logic using the frequency-encoding principle. The frequency encoding/decoding based optical communication has distinctly great advantages because the frequency is the fundamental character of an optical signal and it preserves its identity throughout the communication. The principle of the rotation of the state of polarization of a probe beam through semiconductor optical amplifier (SOA), frequency routing property of an optical add/drop multiplexer (AD) and high frequency conversion property of reflecting semiconductor optical amplifiers (RSOA) have been exploited here to implement the desired AND, OR, NAND and NOR logic operations with tristate logic.

  1. A fiber-optical cable television system using a reflective semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Peng, P. C.; Shiu, K. C.; Liu, W. C.; Chen, K. J.; Lu, H. H.

    2013-02-01

    This investigation demonstrates a fiber-optical cable television system using a reflective semiconductor optical amplifier (RSOA) for uplink transmission. The downstream signal is cable television and the upstream signal is generated by remodulating the downstream signal via an RSOA with a radio-frequency signal. Favorable carrier-to-noise ratio, composite second-order, and composite triple beat are obtained for the downstream and the upstream signal is successfully transmitted over 60 km of single-mode fiber.

  2. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  3. Investigation of Surface Breakdown on Semiconductor Devices Using Optical Probing Techniques.

    DTIC Science & Technology

    1990-01-01

    18] L. Bovino , T. Burke, R. Youmans, M. Weiner, and J. Car, r, "Recent Advances in Optically C’ntrolled Bulk Semiconductor Switches," Digest of...Comp. Simul. 5 (3), 175 (1988). [321 M. Weiner, L. Bovino , R. Youmans, and T. Burke, "Modeling of the Optically Conrolled Semiconductor Switch," J

  4. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier.

    PubMed

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-27

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing.

  5. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    PubMed Central

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  6. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  7. Application of semiconductor optical amplifier for mobile radio communications networks based on radio-over-fiber systems

    NASA Astrophysics Data System (ADS)

    Andreev, Vladimir A.; Burdin, Vladimir A.; Volkov, Kirill A.; Dashkov, Michael V.; Bukashkin, Sergei A.; Buzov, Alexander L.; Procopiev, Vladimir I.; Zharkov, Alexander D.

    2016-03-01

    The analysis of semiconductor optical amplifier applications in Radio-over-Fiber systems of telecommunication networks is given. In such systems semiconductor optical amplifier can be used for either amplification, modulation or detection, and also as an universal device.

  8. All-semiconductor metamaterial-based optical circuit board at the microscale

    NASA Astrophysics Data System (ADS)

    Min, Li; Huang, Lirong

    2015-07-01

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  9. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  10. Numerical stability maps of an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    Fordell, T.; Lindberg, Å. M.

    2004-12-01

    Detailed experimental mappings of the dynamics of a Fabry-Pérot type semiconductor laser subjected to external optical injection along with parameters describing the injected laser have been published by Eriksson and Lindberg [J. Opt. B: Quantum Semiclass. Opt. 4 (2002) 149] and by Eriksson [Opt. Commun. 210 (2002) 343]. This paper reports on a numerical investigation of the injection experiments. By computing the largest Lyapunov exponent, the chaotic islands, periodic windows and locking ranges are compared in detail with the experimental results for three different operating points of the laser. The numerical results are in good agreement with the experiment once the linewidth enhancement factor is increased from the earlier reported value of 3.9 ± 0.5 to about 6.7. The new value is confirmed by a re-measurement of the linewidth enhancement factor using a current modulation technique.

  11. Track membranes with embedded semiconductor nanocrystals: structural and optical examinations

    NASA Astrophysics Data System (ADS)

    Orlova, A. O.; Gromova, Yu A.; Savelyeva, A. V.; Maslov, V. G.; Artemyev, M. V.; Prudnikau, A.; Fedorov, A. V.; Baranov, A. V.

    2011-11-01

    We studied the optical properties of poly(ethylene terephthalate) ion track membranes of 1.5, 0.5 and 0.05 µm pores impregnated with luminescent semiconductor CdSe/ZnS nanocrystals of different diameters (2.5 and 5 nm). The nanocrystals were embedded from their colloidal solutions in toluene by the immersion of a membrane in a colloidal solution. Localization of quasi-isolated weakly interacting CdSe/ZnS nanocrystals in a loosened layer on the track pore wall surface along with the existence of empty pores was demonstrated. We observed also the spatial separation of nanocrystals of 2.5 and 5 nm in size along the 50 nm pores.

  12. S-Matrix Theory of Ultrafast Optical Phenomena in Semiconductors

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Alex V.

    1997-08-01

    A formalism for describing optical and transport properties of semiconductors excited by ultrashort laser pulses is presented. In contrast to existing theories, the quantum dynamics is described in terms of appropriately generalized single-particle wavefunctions (S-matrix) instead of the ensemble-averaged observables such as distribution functions. TheS-matrix is an operator that relates Heisenberg second quantization operators at finite times to their values in a vacuum state prior to excitation. The explicit form of theS-matrix is given by a perturbative expansion whose terms contain pairs of creation and annihilation operators. The coefficients of the expansion are found using a specially developed diagram technique for Coulomb systems. The first (c-number) term of this expansion is formed from single-electron wavefunctions in an optically excited noninteracting system. In real space, these wavefunctions are well-defined wavepackets whose properties can be investigated analytically. Linear and nonlinear ultrafast optical phenomena are controlled by overlap between conduction and valence band wavepackets. Specific cases of noninteracting electrons, coherent interactions leading to excitonic effects, and the incoherent scattering in the Born approximation are analysed within theS-matrix approach.

  13. A method of developing frequency encoded multi-bit optical data comparator using semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Garai, Sisir Kumar

    2011-02-01

    Optical data comparator is the part and parcel of arithmetic and logical unit of any optical data processor and it is working as a building block in a larger optical circuit, as an optical switch in all optical header processing and optical packet switching based all optical telecommunications system. In this article the author proposes a method of developing an all optical single bit comparator unit and subsequently extending the proposal to develop a n-bit comparator exploiting the nonlinear rotation of the state of polarization of the probe beam in semiconductor optical amplifier (SOA). Here the dataset to be compared are taken in frequency encoded/decoded form throughout the communication. The major advantages of frequency encoding over all other conventional techniques are that as the frequency of any signal is fundamental one so it can preserve its identity throughout the communication of optical signal and minimizes the probability of bit error problem. For frequency routing purpose optical add/drop multiplexer (ADM) is used which not only route the pump beams properly but also to amplify the pump beams efficiently. Switching speed of 'MZI-SOA switch' as well as SOA based switches are very fast with good on-off contrast ratio and as a result it is possible to obtain very fast action of optical data comparator.

  14. Optical spectroscopy of novel semiconductors in high magnetic fields

    NASA Astrophysics Data System (ADS)

    Ludwig, Jonathan

    Understanding new quantum phenomena and properties of new materials is the foundation of condensed matter physics. One can mention celebrated examples of integer and fractional quantum Hall effect, Aharonov-Bohm quantum interference effects, inventions of heterostructures and superlattices, and a recent discover of Dirac-like quasiparticles in atomically thin 2D crystals. Here we employ optical spectroscopy combined with large magnetic field and low temperatures to probe the electronic structure of several novel semiconductor materials. The discovery of graphene has opened the door to the study of other 2D materials. Here we focus on a new family of semiconducting layered 2D materials known as transition metal dichalcogenides (TMDs), which have recently emerged as a new class of direct bandgap 2D semiconductors with two degenerate, but non-equality valleys at the +K and -K points in the Brillouin zone. Due to the broken inversion symmetry in monolayer TMDs, this valley degree of freedom can be selectively addressed by optical helicity, opening the possibility for valleytronic and optoelectronic applications. By performing valley selective photoluminescence measurements on TMDs we demonstrate the lifting of the valley degeneracy and valley polarization in an applied perpendicular magnetic field. One of the most remarkable properties of graphene is its linear dispersion. Once relegated only to the realm of theoretical exploration, the past ten years has seen an explosion in the realization of new Dirac-like materials in condensed matter systems. One of the most important of these new Dirac-like materials is HgTe quantum wells (QWs). Here, we report on Landau level spectroscopy studies of a series of HgTe QWs grown near or at the critical well thickness, where the band gap ?vanishes. We observe a square root B dependence for the energy of the dominant cyclotron resonance (CR) transition over the broad range of magnetic fields, characteristic of Dirac fermions. While

  15. Fabrication and optical studies of semiconductor quantum well structures

    NASA Astrophysics Data System (ADS)

    Chang, Huicheng

    In an effort to investigate modulation doping and 2-dimensional electron gas in wide gap semiconductors and diluted magnetic semiconductors, we carried out systematic studies of n-type modulation doped ZnSe/Zn0.86Cd0.14Se and ZnSe/Zn0.825Cd 0.14Mn0.035Se single quantum well structures. The roles of spacers between doped barriers and undoped wells, as well as doping levels with regard to screening of excitons, were investigated. Low temperature photoluminescence studies were performed under magnetic fields up to 30 tesla. In the presence of a magnetic field, distinct features evolved from the broad luminescence band. These are attributed to interband transitions between electrons occupying Landau levels to photoexcited holes. An analysis of the Landau-level occupation as a function of magnetic field yields the electron sheet density. Modulation doping was also studied in the context of lasing characteristics, such as doping the barriers in the active region of ZnSe/ZnCdSe quantum well laser structures. With the aid of n-type modulation doping, the optical gain (∝ (fc - fv)) enhanced by the modifications of the Fermi-Dirac distribution functions for electrons and holes in the conduction and valence bands. Resulting threshold conditions were obtained to be 1/2 ˜ 1/3 of those without modulation doping in the active regions. The biexcitonic stimulated emission, ˜10 meV below the main excitonic emission, was also observed in undoped samples, but not in the modulation doped structures due to the instability of excitons caused by the two dimensional electron gas in the well. We also studied the lasing modes in broad-area, equilateral triangular laser cavities, which take advantage of total internal reflection at the cleaved facets of the cavity for circulating modes. A new approach is proposed to study optical modes in equilateral triangular cavities in an analytical form. The modes were obtained by examining the simplest optical paths inside the cavity, which yields

  16. Non-adiabatic effects on the optical response of driven systems

    NASA Astrophysics Data System (ADS)

    Fregoso, Benjamin M.; Kolodrubetz, Michael; Moore, Joel

    Periodically driven systems have received renewed interest due to their capacity to engineer non-trivial effective Hamiltonians. A characteristic of such systems is how they respond to weak periodicity-breaking drive, as for example when a laser is pulsed instead of continuous wave. We develop semi-classical equations of motion of a wave packet in the presence of electric and magnetic fields which are turned on non-adiabatically. We then show the emergence of significant corrections to electronic collective excitations and optical responses of topological insulator surface states, Weyl metals and semiconductor mono-chalcogenides.

  17. All-optical flip-flop based on vertical cavity semiconductor optical amplifiers.

    PubMed

    Song, Deqiang; Gauss, Veronica; Zhang, Haijiang; Gross, Matthias; Wen, Pengyue; Esener, Sadik

    2007-10-15

    We report the operation of an all-optical set-reset (SR) flip-flop based on vertical cavity semiconductor optical amplifiers (VCSOAs). This flip-flop is cascadable, has low optical switching power (~10 microW), and has the potential to be integrated on a small footprint (~100 microm(2)). The flip-flop is composed of two cross-coupled electrically pumped VCSOA inverters and uses the principles of cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics to achieve flip-flop functionality. We believe that, when integrated on chip, this type of all-optical flip-flop opens new prospects for implementing all-optical fast memories and timing regeneration circuits.

  18. Study of all-optical sampling using a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Chen; Wang, Yongjun; Wang, Lina; Wang, Fu

    2017-03-01

    All-optical sampling is an important research content of all-optical signal processing. In recent years, the application of the semiconductor optical amplifier (SOA) in optical sampling has attracted lots of attention because of its small volume and large nonlinear coefficient. We propose an optical sampling model based on nonlinear polarization rotation effect of the SOA. The proposed scheme has the advantages of high sampling speed and small input pump power, and a transfer curve with good linearity was obtained through simulation. To evaluate the performance of sampling, we analyze the linearity and efficiency of sampling pulse considering the impact of pulse width and analog signal frequency. We achieve the sampling of analog signal to high frequency pulse and exchange the positions of probe light and pump light to study another sampling.

  19. Investigations of a Coherently Driven Semiconductor Optical Cavity QED System

    DTIC Science & Technology

    2008-09-30

    S. Parkins, and H. J. Kimble, Science 287, 1447 2000. 3 P. W. H. Pinske , T. Fischer, P. Maunz, and G. Rempe, Nature London 404, 365 2000. 4...tuning process 40. 68 I. Schuster, A. Kubanek, A. Fuhrmanek, T. Puppe, P. W. H. Pinske , K. Murr, and G. Rempe, Nat. Phys. 4, 382 2008. 69 J. M

  20. Enhancing light slow-down in semiconductor optical amplifiers by optical filtering.

    PubMed

    Xue, Weiqi; Chen, Yaohui; Ohman, Filip; Sales, Salvador; Mørk, Jesper

    2008-05-15

    We show that the degree of light-speed control in a semiconductor optical amplifier can be significantly extended by the introduction of optical filtering. We achieve a phase shift of approximately 150 degrees at 19 GHz modulation frequency, corresponding to a several-fold increase of the absolute phase shift as well as the achievable bandwidth. We show good quantitative agreement with numerical simulations, including the effects of population oscillations and four-wave mixing, and provide a simple physical explanation based on an analytical perturbation approach.

  1. Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

    DOEpatents

    Duncan, Paul G.

    2002-01-01

    Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

  2. Coherent control of optical bistability and multistability in a triple semiconductor quantum well nanostructure

    NASA Astrophysics Data System (ADS)

    Raheli, A.; Afshari, H.; Hamedi, H. R.

    2015-10-01

    This paper deals with optical bistability (OB) and optical multistability (OM) behaviors for a triple semiconductor quantum well (SQW) structure driven coherently with two control fields, confined in a unidirectional ring cavity. The effect of different system parameters on OB and OM is explored. It is found that the threshold of onset of the OB can be controlled by manipulating the Rabi frequency of control fields. In this case, OB can be converted to OM. Then we investigate the effect of probe and control field detunings on OB behaviors. We found that the frequency detuning of probe field affects only the upper-lower branches of the OB curves but has no specific impact on OB threshold. By manipulating the first control field detuning, neither the OB threshold intensity nor upper-lower branches change. Finally, it is found that increasing the second control field detuning can reduce merely the OB threshold intensity, while no change happens in upper-lower OB branches. The results may be applicable in real experiments for realizing an all-optical switching or coding element in a solid-state platform.

  3. Optical driven electromechanical transistor based on tunneling effect.

    PubMed

    Jin, Leisheng; Li, Lijie

    2015-04-15

    A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic.

  4. Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Shouting

    Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

  5. Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206

    SciTech Connect

    Sopori, B.

    2011-02-01

    This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

  6. A LATTICE THEORY OF THE ELECTRO-OPTIC EFFECTS IN SEMICONDUCTORS.

    DTIC Science & Technology

    A unified lattice theory of the electro - optic effect in semiconductor crystals, which encompasses the piezo-electric and elasto-optic effects, is...presented. Expressions are derived for the constant stress and constant strain electro - optic coefficients and the results are specialized to crystals of the zincblende structure. (Author)

  7. X-ray and optical characterization of multilayer semiconductor waveguides

    NASA Astrophysics Data System (ADS)

    Durand, Olivier; Leo, Giuseppe; Masini, Gianlorenzo; Colace, Lorenzo; Marcadet, Xavier; Berger, Vincent; Assanto, Gaetano

    2001-05-01

    Nowadays refractive-index engineering has become a challenging area for experimentalists in semiconductor integrated optics, whereas design constraints are often more strict than both standard technology tolerances and model accuracies. In fact, it is crucial to non-destructively evaluate thicknesses and refractive indices of a multilayer waveguide independently, and to this aim we resorted to X-ray reflectometry and effective index measurements on MBE-grown AlGaAs waveguides, respectively. With the first technique interference effects (Kiessig fringes) arise, which are related to layer thicknesses. By standard data processing, thickness accuracies of +/- 0.05 nm are readily achieved. Effective index measurements were performed at several wavelengths on both slab and rib waveguides, through grating-assisted distributed coupling with both photoresist and etched gratings. Effective indices were determined with an absolute precision as good as 1/2000, adequate for phase matching in parametric devices. Merging thickness and effective index evaluations, the refractive indices of the constituent layers were determined with unprecedented accuracies, in substantial agreement with existing models.

  8. Continuously controlled optical band gap in oxide semiconductor thin films

    SciTech Connect

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.

  9. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGES

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  10. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

    SciTech Connect

    Cundiff, Steven T.

    2016-05-03

    This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

  11. Terahertz optics: Terahertz-driven harmonics

    NASA Astrophysics Data System (ADS)

    Kim, K. Y.; You, Y. S.

    2014-02-01

    Researchers have demonstrated high-harmonic generation using strong terahertz pulses in a bulk solid without damaging it. The mechanism underpinning such an extreme nonlinearity also generates coherent electromagnetic radiation covering the terahertz, infrared and optical regions.

  12. Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

    PubMed Central

    2014-01-01

    Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

  13. Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

    SciTech Connect

    Keay, B.J.; Allen, S.J.; Campman, K.L.

    1995-12-31

    We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process.

  14. Optical Harmonic Generation from Interfaces with Group IV Semiconductors.

    NASA Astrophysics Data System (ADS)

    Bottomley, David John

    Nonlinear optical techniques have been used to investigate the symmetry properties of interfaces between media comprising at least one Group IV semiconductor. Second harmonic generation (SHG) and third harmonic generation (THG) have been performed for s and p polarization states of the fundamental and harmonic beams as a function of sample azimuthal angle at a fixed fundamental wavelength of 775 nm. In addition to these experimental measurements, the thesis contains theoretical calculations of the optical harmonic response from such media with vicinal surfaces, that is surfaces miscut from a low-index face by {<}{~}10^ circ. The phenomenological theory of Sipe, Moss and van Driel (Phys. Rev. B 35, 1129 (1987)) for SHG and THG in reflection from the low-index faces of cubic centrosymmetric media has been extended to all faces of both cubic centrosymmetric and cubic noncentrosymmetric media. This theory is applied in many parts of the thesis to interpreting the symmetry information present in nonlinear optical data. Experimentally, measurements of SHG and THG from vicinal semiconductor wafers have been performed, and using the above theory the wafer orientations have been obtained to within +/-0.1^circ . In addition, the above theory has been applied to achieve an approximate separation of bulk and surface contributions to SHG measurements from vincinal Si(001) and Si(111) surfaces which Sipe et al. showed is not possible on the low-index faces. The SiO_2/Si interface on vicinal Si(001) has been studied with SHG, and evidence has been obtained for the presence of noncentrosymmetric phases of c-SiO_2 at this interface whose relative concentrations are influenced by the oxidation conditions. For oxidation temperatures below 600 ^circC, the SHG data is shown to be consistent with the presence of tridymite at the buried interface, whereas for oxidation at 900^ circC the SHG data is consistent with the presence of cristobalite. Finally, SHG has been measured from odd

  15. All-optical wavelength conversion by four-wave mixing in a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Lee, Robert Bumju

    1997-11-01

    Wavelength division multiplexed optical communication systems will soon become an integral part of commercial optical networks. A crucial new function required in WDM networks is wavelength conversion, the spectral translation of information-laden optical carriers, which enhances wavelength routing options and greatly improves network reconfigurability. One of several techniques for implementing this function is four-wave mixing utilizing ultra-fast intraband nonlinearities in semiconductor optical amplifiers. The effects of input power, noise prefiltering and semiconductor optical amplifier length on the conversion efficiency and optical signal-to-noise ratio were examined. Systems experiments have been conducted in which several important performance characteristics of the wavelength converter were studied. A bit-error-rate performance of <10-9 at 10 Gb/s was achieved for a record shift of 18 nm down in wavelength and 10 nm up in wavelength. Two cascaded conversions spanning a 40 km fiber link at 10 Gb/s are also demonstrated for conversions of up to 9 nm down and up in wavelength. The dynamic range of input signal power and its impact on the BER performance were studied at 2.5 Gb/s for both a single-channel conversion and a simultaneous 2-channel conversion. The crosstalk penalty induced by parasitic cross-gain modulation in 2-channel conversion is quantified. The spectral inversion which results from the conversion process is studied by time-resolved spectral analysis, and its application as a technique for dispersion compensation is demonstrated. Finally, the application of selective organometallic vapor-phase epitaxy for the formation of highly-uniform and densely-packed arrays of GaAs quantum dots is demonstrated. GaAs dots of 15-20 nm in base diameter and 8-10 nm in height terminated by slow-growth crystallographic planes were grown within dielectric-mask openings and characterized by atomic force microscopy.

  16. Laser-driven polyplanar optic display

    SciTech Connect

    Veligdan, J.T.; Biscardi, C.; Brewster, C.; DeSanto, L.; Beiser, L.

    1998-01-01

    The Polyplanar Optical Display (POD) is a unique display screen which can be used with any projection source. This display screen is 2 inches thick and has a matte-black face which allows for high contrast images. The prototype being developed is a form, fit and functional replacement display for the B-52 aircraft which uses a monochrome ten-inch display. The new display uses a 200 milliwatt green solid-state laser (532 nm) as its optical source. In order to produce real-time video, the laser light is being modulated by a Digital Light Processing (DLP) chip manufactured by Texas Instruments, Inc. A variable astigmatic focusing system is used to produce a stigmatic image on the viewing face of the POD. In addition to the optical design, the authors discuss the DLP chip, the optomechanical design and viewing angle characteristics.

  17. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  18. Time-domain model of quantum-dot semiconductor optical amplifiers for wideband optical signals.

    PubMed

    Puris, D; Schmidt-Langhorst, C; Lüdge, K; Majer, N; Schöll, E; Petermann, K

    2012-11-19

    We present a novel theoretical time-domain model for a quantum dot semiconductor optical amplifier, that allows to simulate subpicosecond pulse propagation including power-based and phase-based effects. Static results including amplified spontaneous emission spectra, continuous wave amplification, and four-wave mixing experiments in addition to dynamic pump-probe simulations are presented for different injection currents. The model uses digital filters to describe the frequency dependent gain and microscopically calculated carrier-carrier scattering rates for the interband carrier dynamics. It can be used to calculate the propagation of multiple signals with different wavelengths or one wideband signal with high bitrate.

  19. Optoelectronic device simulation: Optical modeling for semiconductor optical amplifiers and solid state lighting

    NASA Astrophysics Data System (ADS)

    Wang, Dong-Xue (Michael)

    2006-07-01

    Recent advances in optoelectronic devices require sophisticated optical simulation and modeling. These tiny semiconductor device structures, such as semiconductor lasers and light emitting diodes (LED), not only need detailed electrical computation, such as band structure, carrier transportation, and electron-hole recombination under different external voltages, but also require comprehensive optical modeling, such as photon generation and propagation. Optical modeling also includes waveguide structure calculations, guided mode and leakage mode identification, as well far-field pattern prediction using optical ray tracing. In modeling semiconductor lasers, light emission and propagation can be treated using the single mode of wave optics, the so-called photon propagation equation coupled with carrier transport equations. These differential equations can be numerically solved using the Finite Difference Method (FDM). In the LED modeling, the main tools are based on optical ray tracing, and photons are treated as light emissions with random directions and polarizations. Optical waveguide theory is used to qualitatively analyze photon emissions inside a LED chip, and helps to design the LED device structure. One important area of semiconductor laser modeling is the optical simulation of the wavelength converter based on semiconductor optical amplifiers (SOA). This wavelength converter is a critical device in optical communication, and it can copy information from one wavelength to anther through cross-gain modulation. Some numerical methods have been developed to model the wavelength conversion. In these methods, solutions are found by solving differential equations in the time domain using FDM. In all previous models, the waveguide internal loss is assumed uniform across the cavity of the SOA, or the gain coefficient is based on the polynomial approximation method, i.e., the gain coefficient is assumed proportional to the difference between the carrier and

  20. Tunable optical delay via carrier induced exciton dephasing in semiconductor quantum wells.

    PubMed

    Sarkar, Susanta; Guo, Yan; Wang, Hailin

    2006-04-03

    We report the experimental realization of a tunable optical delay by exploiting unique incoherent nonlinear optical processes in semiconductors. The tunable optical delay takes advantage of the strong Coulomb interactions between excitons and free carriers and uses optical injection of free carriers to broaden and bleach an exciton absorption resonance. Fractional delay exceeding 200% has been obtained for an 8 ps optical pulse propagating near the heavy-hole excitonic transition in a GaAs quantum well structure. Tunable optical delay based on optical injection of free carriers avoids strong absorption of the pump beam and is also robust against variations in the frequency of the pump beam.

  1. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  2. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    SciTech Connect

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-08-23

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  3. Ultrafast all-optical switching with photonic nanojets and semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2016-03-01

    The potential of terabit-per-second fibre optics can be unlocked with emerging all-optical networks and processors employing all-optical switching. To be effective, all-optical switching must support operations with femtojoule switching energies and femtosecond switching times. With this in mind, this work studies geometrical and material characteristics for all-optical switching and develops a new all-optical switching architecture. A nanojet focal geometry is applied, in the form of dielectric spheres, to direct high-intensity photonic nanojets into peripheral semiconductors. Theoretical and experimental analyses demonstrate photonic nanojets, enabling femtojoule switching energies through localized photoinjection, and semiconductor nanoparticles, enabling femtosecond switching times through localized recombination.

  4. An analytical study on bistability of Fabry-Perot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wang, Gang; Chen, Shuqiang; Yang, Huajun

    2016-09-01

    Optical bistabilities have been considered to be useful for sensor applications. As a typical nonlinear device, Fabry-Perot semiconductor optical amplifiers (FPSOAs) exhibit bistability under certain conditions. In this paper, the bistable characteristics in FPSOAs are investigated theoretically. Based on Adams's relationship between the incident optical intensity I in and the z-independent average intracavity intensity I av, an analytical expression of the bistable loop width in SOAs is derived. Numerical simulations confirm the accuracy of the analytical result.

  5. Nanoscale-driven crystal growth of hexaferrite heterostructures for magnetoelectric tuning of microwave semiconductor integrated devices.

    PubMed

    Hu, Bolin; Chen, Zhaohui; Su, Zhijuan; Wang, Xian; Daigle, Andrew; Andalib, Parisa; Wolf, Jason; McHenry, Michael E; Chen, Yajie; Harris, Vincent G

    2014-11-25

    A nanoscale-driven crystal growth of magnetic hexaferrites was successfully demonstrated at low growth temperatures (25-40% lower than the temperatures required often for crystal growth). This outcome exhibits thermodynamic processes of crystal growth, allowing ease in fabrication of advanced multifunctional materials. Most importantly, the crystal growth technique is considered theoretically and experimentally to be universal and suitable for the growth of a wide range of diverse crystals. In the present experiment, the conical spin structure of Co2Y ferrite crystals was found to give rise to an intrinsic magnetoelectric effect. Our experiment reveals a remarkable increase in the conical phase transition temperature by ∼150 K for Co2Y ferrite, compared to 5-10 K of Zn2Y ferrites recently reported. The high quality Co2Y ferrite crystals, having low microwave loss and magnetoelectricity, were successfully grown on a wide bandgap semiconductor GaN. The demonstration of the nanostructure materials-based "system on a wafer" architecture is a critical milestone to next generation microwave integrated systems. It is also practical that future microwave integrated systems and their magnetic performances could be tuned by an electric field because of the magnetoelectricity of hexaferrites.

  6. Gravity-driven convection studies in compound semiconductor crystal growth by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Zoutendyk, J. A.; Akutagawa, W. M.

    1982-01-01

    Experimental results are summarized, and it is pointed out that gravity-driven convection can alter the diffusive-advective mass transport behavior in the growth of crystals by physical vapor transport. Specially designed and constructed transparent furnaces are described which are being used to study the effects of gravity in the crystal growth of the compound semiconductors PbTe and CdTe. The theory underlying vapor transport behavior is reviewed, with attention given to the vapor-solid behavior of compound materials, to one-dimensional mass transport, and to gravity-induced (natural) convection. In the transparent furnaces, the quartz capillary tube mounted along the axis of the main quartz ampoule is used to measure the temperature at the growth surface (vapor-solid crystal interface) and the source, as well as the complete temperature profile along the axis of the tube. The light-pipe works to remove heat from the growth end of the ampoule by radiative heat transfer. The ampoules are sealed after being evacuated to the low 10 to the -8th torr range with a cryogenic vacuum pump.

  7. Tangled nonlinear driven chain reactions of all optical singularities

    NASA Astrophysics Data System (ADS)

    Vasil'ev, V. I.; Soskin, M. S.

    2012-03-01

    Dynamics of polarization optical singularities chain reactions in generic elliptically polarized speckle fields created in photorefractive crystal LiNbO3 was investigated in details Induced speckle field develops in the tens of minutes scale due to photorefractive 'optical damage effect' induced by incident beam of He-Ne laser. It was shown that polarization singularities develop through topological chain reactions of developing speckle fields driven by photorefractive nonlinearities induced by incident laser beam. All optical singularities (C points, optical vortices, optical diabolos,) are defined by instantaneous topological structure of the output wavefront and are tangled by singular optics lows. Therefore, they have develop in tangled way by six topological chain reactions driven by nonlinear processes in used nonlinear medium (photorefractive LiNbO3:Fe in our case): C-points and optical diabolos for right (left) polarized components domains with orthogonally left (right) polarized optical vortices underlying them. All elements of chain reactions consist from loop and chain links when nucleated singularities annihilated directly or with alien singularities in 1:9 ratio. The topological reason of statistics was established by low probability of far enough separation of born singularities pair from existing neighbor singularities during loop trajectories. Topology of developing speckle field was measured and analyzed by dynamic stokes polarimetry with few seconds' resolution. The hierarchy of singularities govern scenario of tangled chain reactions was defined. The useful space-time data about peculiarities of optical damage evolution were obtained from existence and parameters of 'islands of stability' in developing speckle fields.

  8. Driven optical matter: Dynamics of electrodynamically coupled nanoparticles in an optical ring vortex

    NASA Astrophysics Data System (ADS)

    Figliozzi, Patrick; Sule, Nishant; Yan, Zijie; Bao, Ying; Burov, Stanislav; Gray, Stephen K.; Rice, Stuart A.; Vaikuntanathan, Suriyanarayanan; Scherer, Norbert F.

    2017-02-01

    To date investigations of the dynamics of driven colloidal systems have focused on hydrodynamic interactions and often employ optical (laser) tweezers for manipulation. However, the optical fields that provide confinement and drive also result in electrodynamic interactions that are generally neglected. We address this issue with a detailed study of interparticle dynamics in an optical ring vortex trap using 150-nm diameter Ag nanoparticles. We term the resultant electrodynamically interacting nanoparticles a driven optical matter system. We also show that a superior trap is created by using a Au nanoplate mirror in a retroreflection geometry, which increases the electric field intensity, the optical drive force, and spatial confinement. Using nanoparticles versus micron sized colloids significantly reduces the surface hydrodynamic friction allowing us to access small values of optical topological charge and drive force. We quantify a further 50% reduction of hydrodynamic friction when the nanoparticles are driven over the Au nanoplate mirrors versus over a mildly electrostatically repulsive glass surface. Further, we demonstrate through experiments and electrodynamics-Langevin dynamics simulations that the optical drive force and the interparticle interactions are not constant around the ring for linearly polarized light, resulting in a strong position-dependent variation in the nanoparticle velocity. The nonuniformity in the optical drive force is also manifest as an increase in fluctuations of interparticle separation, or effective temperature, as the optical driving force is increased. Finally, we resolve an open issue in the literature on periodic modulation of interparticle separation with comparative measurements of driven 300-nm-diameter polystyrene beads that also clearly reveal the significance of electrodynamic forces and interactions in optically driven colloidal systems. Therefore, the modulations in the optical forces and electrodynamic interactions

  9. Distributed fibre optic strain measurements on a driven pile

    NASA Astrophysics Data System (ADS)

    Woschitz, Helmut; Monsberger, Christoph; Hayden, Martin

    2016-05-01

    In civil engineering pile systems are used in unstable areas as a foundation of buildings or other structures. Among other parameters, the load capacity of the piles depends on their length. A better understanding of the mechanism of load-transfer to the soil would allow selective optimisation of the system. Thereby, the strain variations along the loaded pile are of major interest. In this paper, we report about a field trial using an optical backscatter reflectometer for distributed fibre-optic strain measurements along a driven pile. The most significant results gathered in a field trial with artificial pile loadings are presented. Calibration results show the performance of the fibre-optic system with variations in the strain-optic coefficient.

  10. Phase noise reduction of a semiconductor laser in a composite optical phase-locked loop

    NASA Astrophysics Data System (ADS)

    Satyan, Naresh; Sendowski, Jacob; Vasilyev, Arseny; Rakuljic, George; Yariv, Amnon

    2010-12-01

    The bandwidth and residual phase noise of optical phase-locked loops (OPLLs) using semiconductor lasers are typically constrained by the nonuniform frequency modulation response of the laser, limiting their usefulness in a number of applications. It is shown in this work that additional feedback control using an optical phase modulator improves the coherence between the master and slave lasers in the OPLL by achieving bandwidths determined only by the propagation delay in the loop. A phase noise reduction by more than a factor of two is demonstrated in a proof-of-concept experiment using a commercial distributed feedback semiconductor laser.

  11. Ultrafast switching based on field optical bistability in nano-film of semiconductor

    NASA Astrophysics Data System (ADS)

    Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

    2016-09-01

    Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.

  12. Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

    NASA Astrophysics Data System (ADS)

    Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

    2016-05-01

    It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

  13. Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors

    NASA Astrophysics Data System (ADS)

    Malevich, Y. V.; Adomavičius, R.; Krotkus, A.; Malevich, V. L.

    2014-02-01

    Transient photoconductivity in cubic semiconductors InGaAs and InAs excited by a femtosecond laser pulse in the presence of a uniform dc electric field has been studied with the use of the Monte Carlo simulation by taking into account optical alignment of photoexcited electrons over their momenta. Simulations show that due to the optical alignment effect and energy dependence of the electron mobility, the transient photoconductivity in cubic semiconductors becomes anisotropic during the first few picoseconds after optical excitation. The magnitude of this anisotropy reaches its peak when the excess energy of the optically excited electrons approaches the threshold for the intervalley transfer. It has also been found that when the electrons are excited near the threshold energy for the intervalley transfer, the component of the transient photocurrent directed along the dc field for a short time after the end of the femtosecond optical pulse can become negative. The anisotropy of the transient photoconductivity has been investigated experimentally on (001) InGaAs sample by the optical pump - terahertz-probe technique. Optically induced changes in terahertz pulse amplitude were found to be dependent on the direction of terahertz field relative to the polarization of the optical pump pulse and to the crystallographic axes of the semiconductor. Experimental data have been explained in terms of the transient anisotropic photoconductivity and correlate with the results of the Monte Carlo simulation.

  14. Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors

    SciTech Connect

    Malevich, Y. V. Adomavičius, R.; Krotkus, A.; Malevich, V. L.

    2014-02-21

    Transient photoconductivity in cubic semiconductors InGaAs and InAs excited by a femtosecond laser pulse in the presence of a uniform dc electric field has been studied with the use of the Monte Carlo simulation by taking into account optical alignment of photoexcited electrons over their momenta. Simulations show that due to the optical alignment effect and energy dependence of the electron mobility, the transient photoconductivity in cubic semiconductors becomes anisotropic during the first few picoseconds after optical excitation. The magnitude of this anisotropy reaches its peak when the excess energy of the optically excited electrons approaches the threshold for the intervalley transfer. It has also been found that when the electrons are excited near the threshold energy for the intervalley transfer, the component of the transient photocurrent directed along the dc field for a short time after the end of the femtosecond optical pulse can become negative. The anisotropy of the transient photoconductivity has been investigated experimentally on (001) InGaAs sample by the optical pump - terahertz-probe technique. Optically induced changes in terahertz pulse amplitude were found to be dependent on the direction of terahertz field relative to the polarization of the optical pump pulse and to the crystallographic axes of the semiconductor. Experimental data have been explained in terms of the transient anisotropic photoconductivity and correlate with the results of the Monte Carlo simulation.

  15. Optically induced transport through semiconductor-based molecular electronics

    NASA Astrophysics Data System (ADS)

    Li, Guangqi; Fainberg, Boris D.; Seideman, Tamar

    2015-04-01

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  16. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  17. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  18. Observation and simulation of an optically driven micromotor

    NASA Astrophysics Data System (ADS)

    Metzger, N. K.; Mazilu, M.; Kelemen, L.; Ormos, P.; Dholakia, K.

    2011-04-01

    In the realm of low Reynolds number flow there is a need to find methods to pump, move and mix minute amounts of analyte. Interestingly, micro-devices performing such actuation can be initiated by means of the light-matter interaction. Light induced forces and torques are exerted on such micro-objects, which are then driven by the optical gradient or scattering force. Here, different driving geometries can be realized to harness the light induced force. For example, the scattering force enables micro-gears to be operated in a tangential setup where the micromotor rotors are in line with an optical waveguide. The operational geometry we investigate has the advantage that it reduces the complexity of the driving of such a device in a microfluidic environment by delivering the actuating light by means of a waveguide or fiber optic. In this paper we explore the case of a micromotor being driven by a fiber optically delivered light beam. We experimentally investigate how the driving light interacts with and diffracts from the motor, utilizing two-photon imaging. The micromotor rotation rate dependence on the light field parameters is explored. Additionally, a theoretical model based on the paraxial approximation is used to simulate the torque and predict the rotation rate of such a device and compare it with experiment. The results presented show that our model can be used to optimize the micromotor performance and some example motor designs are evaluated.

  19. Multi-dimensional coherent optical spectroscopy of semiconductor nanostructures: Collinear and non-collinear approaches

    SciTech Connect

    Nardin, Gaël; Li, Hebin; Autry, Travis M.; Moody, Galan; Singh, Rohan; Cundiff, Steven T.

    2015-03-21

    We review our recent work on multi-dimensional coherent optical spectroscopy (MDCS) of semiconductor nanostructures. Two approaches, appropriate for the study of semiconductor materials, are presented and compared. A first method is based on a non-collinear geometry, where the Four-Wave-Mixing (FWM) signal is detected in the form of a radiated optical field. This approach works for samples with translational symmetry, such as Quantum Wells (QWs) or large and dense ensembles of Quantum Dots (QDs). A second method detects the FWM in the form of a photocurrent in a collinear geometry. This second approach extends the horizon of MDCS to sub-diffraction nanostructures, such as single QDs, nanowires, or nanotubes, and small ensembles thereof. Examples of experimental results obtained on semiconductor QW structures are given for each method. In particular, it is shown how MDCS can assess coupling between excitons confined in separated QWs.

  20. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

    NASA Astrophysics Data System (ADS)

    Li, Min; Mi, Xian-Wu

    2009-12-01

    This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it.

  1. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    PubMed

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

  2. Fast optical source for quantum key distribution based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Jofre, M.; Gardelein, A.; Anzolin, G.; Amaya, W.; Campmany, J.; Ursin, R.; Penate, L.; Lopez, D.; San Juan, J. L.; Carrasco, J. A.; Garcia, F.; Torcal-Milla, F. J.; Sanchez-Brea, L. M.; Bernabeu, E.; Perdigues, J. M.; Jennewein, T.; Torres, J. P.; Mitchell, M. W.; Pruneri, V.

    2011-02-01

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as $1.14\\times 10^{-2}$ while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

  3. Controlled wave-packet manipulation with driven optical lattices

    SciTech Connect

    Arlinghaus, Stephan; Holthaus, Martin

    2011-12-15

    Motivated by recent experimental progress achieved with ultracold atoms in kilohertz-driven optical lattices, we provide a theoretical discussion of mechanisms governing the response of a particle in a cosine lattice potential to strong forcing pulses with smooth envelope. Such pulses effectuate adiabatic motion of a wave packet's momentum distribution on quasienergy surfaces created by spatiotemporal Bloch waves. Deviations from adiabaticity can then be deliberately exploited for exerting coherent control and for reaching target states which may not be accessible by other means. As one particular example, we consider an analog of the {pi} pulses known from optical resonance. We also suggest adapting further techniques previously developed for controlling atomic and molecular dynamics by laser pulses to the coherent control of matter waves in shaken optical lattices.

  4. Screening effect on the exciton mediated nonlinear optical susceptibility of semiconductor quantum dots.

    PubMed

    Bautista, Jessica E Q; Lyra, Marcelo L; Lima, R P A

    2014-11-17

    We study the exciton contribution to the third-order optical susceptibility of one-dimensional semiconductor quantum dots and show that the screening of the electron-hole interaction has a strong influence on the nonlinear optical properties in the weak confinement regime. Based on a density matrix formulation, we estimate the spectrum of the third-order optical susceptibility and its contribution to the refraction index and absorption coefficient. In particular, we show that the multipeaked spectrum of the nonlinear susceptibility, which results from the hydrogenoid character of the exciton eigenstates for a purely Coulombian electron-hole coupling, is reverted towards a single peaked structure as the interaction becomes strongly screened, thus leading to a substantial enhancement of the nonlinear optical properties of semiconductor quantum dots.

  5. Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells

    NASA Astrophysics Data System (ADS)

    H, R. Hamedi; M, R. Mehmannavaz; Hadi, Afshari

    2015-08-01

    The effects of optical field on the phenomenon of optical bistability (OB) are investigated in a K-type semiconductor double quantum well (SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing. Project supported by the Lithuanian Research Council (Grant No. VP1-3.1-ŠM-01-V-03-001).

  6. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  7. Specific features of two-photon optical nutation in a system of biexcitons in semiconductors

    SciTech Connect

    Khadzhi, P. I. Vasil'ev, V. V.

    2007-05-15

    Specific features of two-photon nutation in a system of coherent biexcitons in CuCl-type semiconductors are studied. It is shown that, depending on the parameters of the system, nutation represents a process of periodic conversion of photon pairs into biexcitons and vice versa. The possibility of phase control of optical nutation is predicted.

  8. Experimental investigation of chirp properties induced by signal amplification in quantum-dot semiconductor optical amplifiers.

    PubMed

    Matsuura, Motoharu; Ohta, Hiroaki; Seki, Ryota

    2015-03-15

    We experimentally show the dynamic frequency chirp properties induced by signal amplification in a quantum-dot semiconductor optical amplifier (QD-SOA) for the first time. We also compare the red and blue chirp peak values and temporal chirp changes while changing the gain and injected signal powers of the QD-SOA with those of a common SOA.

  9. Spin-Induced Optical Phenomena in Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Takeyama, Shojiro

    The following sections are included: * INTRODUCTION * GENERAL FEATURES * Materials * Crystal Structures * Band Structure at ěc{k}≃ 0 * sp-d Exchange Interaction * Magnetic Properties and Parameters * Magnetization Steps due to Nearest-Neighbor Spin Pairs * The Physical Origin of the sp-d Exchange Constants * OPTICAL RESPONSE OF THE LOW-DIMENSIONAL DMSs * Anisotropy of the Zeeman Effect in Two-Dimensional DMSs * Magneto-Optical Method of Interface Characterization * MAGNETIC POLARONS * Bound Magnetic Polarons * Free Magnetic Polarons * OPTICAL OBSERVATION OF MAGNETIC POLARONS * A Selective Excitation Photoluminescence Study * Optical Survey of Free Magnetic Polarons * Two-Dimensional Exciton Free Magnetic Polarons * SUMMARY * REFERENCES

  10. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  11. The dynamics of radiation-driven, optically thick winds

    NASA Astrophysics Data System (ADS)

    Shen, Rong-Feng; Nakar, Ehud; Piran, Tsvi

    2016-06-01

    Recent observation of some luminous transient sources with low colour temperatures suggests that the emission is dominated by optically thick winds driven by super-Eddington accretion. We present a general analytical theory of the dynamics of radiation pressure-driven, optically thick winds. Unlike the classical adiabatic stellar wind solution whose dynamics are solely determined by the sonic radius, here the loss of the radiation pressure due to photon diffusion also plays an important role. We identify two high mass-loss rate regimes (dot{M} > L_Edd/c^2). In the large total luminosity regime, the solution resembles an adiabatic wind solution. Both the radiative luminosity, L, and the kinetic luminosity, Lk, are super-Eddington with L < Lk and L ∝ L_k^{1/3}. In the lower total luminosity regime, most of the energy is carried out by the radiation with Lk < L ≈ LEdd. In a third, low mass-loss regime (dot{M} < L_Edd/c^2), the wind becomes optically thin early on and, unless gas pressure is important at this stage, the solution is very different from the adiabatic one. The results are independent from the energy generation mechanism at the foot of the wind; therefore, they are applicable to a wide range of mass ejection systems, from black hole accretion, to planetary nebulae, and to classical novae.

  12. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, M. C.; Muggli, Patric; Yakimenko, Vitaly; Babzien, Marcus; Kusche, Karl; Fedurin, Mikhail

    2010-11-01

    Beam-driven plasma wakefield accelerators (PWFA), such as the ``plasma afterburner,'' are a promising approach for significantly increasing the particle energies of conventional accelerators. The study and optimization of PWFA would benefit from an experimental correlation between the parameters of the drive bunch, the accelerated bunch and the corresponding, accelerating plasma wave structure. However, the plasma wave structure has not yet been observed directly in PWFA. We will report our current work on noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) visualization of beam-driven plasma waves. Both techniques employ two laser pulses (probe and reference) co-propagating with the particle drive-beam and its plasma wake. The reference pulse precedes the drive bunch, while the probe overlaps the plasma wave and maps its longitudinal and transverse structure. The experiment is being developed at the BNL/ATF Linac to visualize wakes generated by two and multi-bunch drive beams.

  13. Time delay signature concealment of optical feedback induced chaos in an external cavity semiconductor laser.

    PubMed

    Wu, Jia-Gui; Xia, Guang-Qiong; Tang, Xi; Lin, Xiao-Dong; Deng, Tao; Fan, Li; Wu, Zheng-Mao

    2010-03-29

    The time delay (TD) signature concealment of optical feedback induced chaos in an external cavity semiconductor laser is experimentally demonstrated. Both the evolution curve and the distribution map of TD signature are obtained in the parameter space of external feedback strength and injection current. The optimum parameter scope of the TD signature concealment is also specified. Furthermore, the approximately periodic evolution relation between TD signature and external cavity length is observed and indicates that the intrinsic relaxation oscillation of semiconductor laser may play an important role during the process of TD signature suppression.

  14. New concept to break the intrinsic properties of organic semiconductors for optical sensing applications

    NASA Astrophysics Data System (ADS)

    Choy, Wallace C. H.

    2015-09-01

    As the intrinsic electrostatic limit, space charge limit (SCL) for photocurrent is a universal phenomenon which is fundamental important for organic semiconductors. We will demonstrate SCL breaking by a new plasmonic-electrical concept. As a proof-ofconcept, organic solar cells (OSCs) comprising metallic planar and grating electrodes are studied. Interestingly, although strong plasmonic resonances induce abnormally dense photocarriers around a grating anode, the grating incorporated inverted OSC is exempt from space charge accumulation (limit) and degradation of electrical properties. The plasmonic-electrical concept will open up a new way to manipulate both optical and electrical properties of semiconductor devices simultaneously.

  15. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    PubMed Central

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  16. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking.

    PubMed

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J; Grillot, Frédéric

    2016-06-15

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%.

  17. Low-temperature optical processing of semiconductor devices using photon effects

    SciTech Connect

    Sopori, B.L.; Cudzinovic, M.; Symko, M.

    1995-08-01

    In an RTA process the primary purpose of the optical energy incident on the semiconductor sample is to increase its temperature rapidly. The activation of reactions involved in processes such as the formation of junctions, metal contacts, deposition of oxides or nitrides, takes place purely by the temperature effects. We describe the observation of a number of new photonic effects that take place within the bulk and at the interfaces of a semiconductor when a semiconductor device is illuminated with a spectrally broad-band light. Such effects include changes in the diffusion properties of impurities in the semiconductor, increased diffusivity of impurities across interfaces, and generation of electric fields that can alter physical and chemical properties of the interface. These phenomena lead to certain unique effects in an RTA process that do not occur during conventional furnace annealing under the same temperature conditions. Of particular interest are observations of low-temperature alloying of Si-Al interfaces, enhanced activation of phosphorus in Si during drive-in, low-temperature oxidation of Si, and gettering of impurities at low-temperatures under optical illumination. These optically induced effects, in general, diminish with an increase in the temperature, thus allowing thermally activated reaction rates to dominate at higher temperatures.

  18. Emergent Cometlike Swarming of Optically Driven Thermally Active Colloids

    NASA Astrophysics Data System (ADS)

    Cohen, Jack A.; Golestanian, Ramin

    2014-02-01

    We propose a simple system of optically driven colloids that convert light into heat and move in response to self-generated and collectively generated thermal gradients. We show that the system exhibits self-organization into a moving cometlike swarm and characterize the structure and response of the swarm to a light-intensity-dependent external tuning parameter. We observe many interesting features in this nonequilibrium system including circulation and evaporation, intensity-dependent shape, density and temperature fluctuations, and ejection of hot colloids from the swarm tip.

  19. Improved reduced models for single-pass and reflective semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    O Duill, S. P.; Barry, L. P.

    2015-01-01

    We present highly accurate and easy to implement, improved lumped semiconductor optical amplifier (SOA) models for both single-pass and reflective semiconductor optical amplifiers (RSOA). The key feature of the model is the inclusion of the internal losses and we show that a few SOA subdivisions are required to achieve a computational accuracy of <0.12 dB. For the case of RSOAs, we generalize a recently published model to account for the internal losses that are vital to replicate the observed RSOA behavior. The results of the improved reduced RSOA model show large overlap when compared to a full bidirectional travelling wave model for over a 40 dB dynamic range of input powers and a 20 dB dynamic range of reflectivity values. The models would be useful for the rapid system simulation of signals in communication systems, i.e. passive optical networks that employ RSOAs, signal processing using SOAs.

  20. Simulation of optical excitation spectra of semiconductor nanowires within effective bond orbital model

    NASA Astrophysics Data System (ADS)

    Chang, Y. C.; Mahmoud, Waleed E.

    2015-11-01

    Systematic studies of optical excitation spectra of semiconductor nanowires (including group IV, III-V, and II-VI materials) obtained by using an eight-band effective bond-orbital model (EBOM) are presented. A new set of EBOM parameters are determined which produce good band structures of zincblende semiconductors for the entire Brillouin zone, suitable for modeling the excitation spectra from infrared to ultraviolet. The band structures and optical excitation spectra, including both the interband and intraband transitions (for doped cases) are calculated. The calculations were done with the use of a symmetrized basis functions which transform according to the irreducible representations of the underlying point group. This can improve the computation efficiency by about two orders of magnitude. Thus, the electronic and optical properties of a large class of materials can be simulated.

  1. Voltage controlled optics of a monolayer semiconductor quantum emitter

    NASA Astrophysics Data System (ADS)

    Chakraborty, Chitraleema; Goodfellow, Kenneth; Kinnischtzke, Laura; Vamivakas, Nick; University of Rochester Team

    2015-03-01

    Two-dimensional atomically thin materials are being actively investigated for next generation optoelectronic devices. Particularly exciting are transition metal dichalcogenides (TMDC) since these materials exhibit a band gap, and support valley specific exciton mediated optical transitions. In this work we report the observation of single photon emission in the TMDC tungsten diselenide. We present magneto-optical spectroscopy results and demonstrate voltage controlled photoluminescence of these localized quantum emitters.

  2. Beam driven upper-hybrid-wave instability in quantized semiconductor plasmas

    SciTech Connect

    Jamil, M.; Rasheed, A.; Rozina, Ch.; Moslem, W. M.; Salimullah, M.

    2014-02-15

    The excitation of Upper-Hybrid waves (UHWs) induced by electron beam in semiconductor plasma is examined using quantum hydrodynamic model. Various quantum effects are taken into account including recoil effect, Fermi degenerate pressure, and exchange-correlation potential. The bandwidth of the UHWs spectrum shows that the system supports purely growing unstable mode. The latter has been studied for diversified parameters of nano-sized GaAs semiconductor.

  3. Optical knobs from slow- to fast-light with gain in low-dimensional semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Han, Dingan; Zeng, Yaguang; Bai, Yanfeng

    2011-09-01

    The light pulse propagation through semiconductor quantum-well heterostructures under realistic experimental conditions is studied analytically with the Schrödinger equations. It is shown that slow light and superluminal propagation with gain can be observed by varying the relative phase and the strength of the applied fields. Such investigation may open up the possibility to control the light propagation and may lead to potential applications such as high-fidelity optical delay lines, optical buffers and optical communication in quantum wells solid materials.

  4. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    NASA Astrophysics Data System (ADS)

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  5. Optical properties of two-dimensional zigzag and armchair graphyne nanoribbon semiconductor.

    PubMed

    Asadpour, Mohamad; Jafari, Mahmoud; Asadpour, Milad; Jafari, Maryam

    2015-03-15

    Optical properties of zigzag and armchair graphyne nanoribbon (GNR) sheet were investigated. Effect of increasing the width of nanoribbon on optical properties and optical band gap in particular was also studied. Calculations were based on density functional theory (DFT) and the results showed that these structures were semiconductors with the optical band gap of about 1-3.5 eV; this value was higher than for the armchair than zigzag structures. With increasing the width of the ribbons, optical band gap decreased in both structures and maximum electron energy loss spectroscopy (EELS) and dielectric constant increased for the zigzag and armchair structures. Moreover, for the armchair structure, maximum optical reflectivity versus GNR width was a linear function, while it showed a teeth behavior for the zigzag structure.

  6. Optically Induced Space-charge and Conductivity Gratings in Wide-bandgap Semiconductors

    NASA Astrophysics Data System (ADS)

    Bryushinin, M. A.; Karavaev, P. M.; Sokolov, I. A.

    We report optical excitation of space-charge and conductivity gratings in wide-bandgap semiconductors. The approach is based on the illumination of semiconductor material with an oscillating interference pattern formed of two light waves, one of which is phase modulated with frequency ω. The non-steady-state photocurrent flowing through the short-circuited semiconductor is the measurable quantity in this technique. The alternating current results from the periodic relative shifts of the photoconductivity and space charge electric field gratings which arise in the volume of the crystal under illumination. The experiments are carried out in β-Ga2O3 crystal and the main parameters of the photoinduced carriers are determined.

  7. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    SciTech Connect

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-04

    Bunch driven plasma wakefield accelerators (PWFA), such as the 'plasma afterburner', are a promising emerging method for significantly increasing the energy output of conventional particle accelerators. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two and multi-bunch drive beams.

  8. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-01

    Bunch driven plasma wakefield accelerators (PWFA), such as the "plasma afterburner," are a promising emerging method for significantly increasing the energy output of conventional particle accelerators [1]. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) [2] and Holographic (FDH) [3] diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two [4] and multi-bunch [5] drive beams.

  9. Optical fiber tips functionalized with semiconductor photonic crystal cavities

    NASA Astrophysics Data System (ADS)

    Shambat, Gary; Provine, J.; Rivoire, Kelley; Sarmiento, Tomas; Harris, James; Vučković, Jelena

    2011-11-01

    We demonstrate a simple and rapid epoxy-based method for transferring photonic crystal (PC) cavities to the facets of optical fibers. Passive Si cavities were measured via fiber taper coupling as well as direct transmission from the fiber facet. Active quantum dot containing GaAs cavities showed photoluminescence that was collected both in free space and back through the original fiber. Cavities maintain a high quality factor (2000-4000) in both material systems. This design architecture provides a practical mechanically stable platform for the integration of photonic crystal cavities with macroscale optics and opens the door for innovative research on fiber-coupled cavity devices.

  10. Optically driven micropump with a twin spiral microrotor.

    PubMed

    Maruo, Shoji; Takaura, Akira; Saito, Yohei

    2009-10-12

    An optically driven micropump that employs viscous drag exerted on a spinning microrotor with left- and right-handed spiral blades on its rotational axis has been developed using two-photon microfabrication. It was demonstrated that the twin spiral microrotor provides a higher rotation speed than a single spiral microrotor. The rotation speed reached 560 rpm at a laser power of 500 mW. The twin spiral microrotor was also applied to a viscous micropump with a U-shaped microchannel. To pump fluid, the twin spiral microrotor located at the corner of the U-shaped microchannel was rotated by focusing a laser beam. The flow field inside the U-shaped microchannel was analyzed using the finite element method (FEM) based on the Navier-Stokes equation to optimize the shape of the microchannel. It was confirmed that the rotation of the twin spiral microrotor generated a unidirectional laminar flow. Finally, a tandem micropump using two twin spiral microrotors was driven by a dual optical trapping system using a spatial light modulation technique.

  11. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    NASA Astrophysics Data System (ADS)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  12. Synchronization of bandwidth-enhanced chaos in semiconductor lasers with optical feedback and injection.

    PubMed

    Someya, Hiroyuki; Oowada, Isao; Okumura, Haruka; Kida, Takahiko; Uchida, Atsushi

    2009-10-26

    We experimentally investigate the generation and synchronization of bandwidth-enhanced chaos in a semiconductor laser (drive laser) that is subject to optical injection from another chaotic semiconductor laser (injection laser) with optical feedback. Effective bandwidth enhancement is achieved over 12 GHz, under the condition in which the optical wavelength of the drive laser is positively detuned with respect to that of the injection laser, outside the injection locking range. The bandwidth-enhanced chaotic signal of the drive laser is injected into a third semiconductor laser (response laser) for synchronization. Synchronization of chaos with a bandwidth greater than 12 GHz is observed between the drive and response lasers, under the condition in which the optical wavelength of the response laser is negatively detuned with respect to that of the drive laser, satisfying the injection locking condition. High-quality chaos synchronization is observed within the injection locking range between the drive and response lasers and under the condition of a low relaxation oscillation frequency of the response laser.

  13. Fibre-optic thermometer using semiconductor-etalon sensor

    NASA Technical Reports Server (NTRS)

    Beheim, G.

    1986-01-01

    A fiber-optic thermometer is described which uses a thick-film SiC sensing etalon. The etalon's temperature-dependent phase shift is determined by analyzing its spectral reflectance, using an LED and a tunable Michelson interferometer. Temperatures from 20 to 1000 C are measured with better than 0.5 deg C resolution.

  14. Novel all-optical switches based on traveling-wave semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaoxing

    1997-08-01

    In this work, novel all-optical switches, which can provide both high-speed and broad-bandwidth switching simultaneously for future telecommunication networks, have been proposed and demonstrated in traveling-wave semiconductor optical amplifiers (TW-SOA). The design, fabrication and characterization of anti- reflection coating for TW-SOA were presented. Guided mode approach was used to optimize the coating conditions. High quality TW-SOA were fabricated with 21 dB small- signal gain, 0.2 dB gain ripple and 5× 10-5 residual reflectivity. The study showed careful selection of the laser wavelength was necessary in order to match the amplifier's operating wavelength. A new class of an all-optical packet switch-the wavelength recognizing switch (WRS)-was proposed. The device uses a control signal to sense the wavelength of the input data packet and taps the packet to the appropriate output port. The underlying mechanism is nearly-degenerate four-wave mixing (FWM). The implementation of the WRS in a broad-area TW-SOA provided +8.2 dB switching efficiency, -28.8 dB crosstalk and 32.9 dB signal-to-noise ratio. The switching bandwidth was 42 nm, while the recognition bandwidth was 0.03 A. Completely filter-free FWM wavelength conversion was also proposed and demonstrated for the first time. The noncollinear configuration provided 29 dB suppression of the straight-through converter beam from the converted signal. Further suppression of the strong pump beam from the converted signal was realized by using an orthogonal polarization technique, with isolation ratio of 19.2 dB achieved. A high conversion efficiency of 4.9 dB, together with a wide efficiency bandwidth of 40 nm and a large signal-to-noise ratio of 28 dB was obtained. Important material parameters were investigated for the optimization of devices' performance. Ambipolar diffusion coefficient of 8.0 cm2/s and carrier lifetime of 1.33 ns were directly measured. The diffusion coefficient decreased as the current

  15. Synthesis and optical properties of organic semiconductor: zirconia nanocomposites

    NASA Astrophysics Data System (ADS)

    Sagmeister, M.; Brossmann, U.; List, E. J. W.; Ochs, R.; Szabó, D. V.; Saf, R.; Grogger, W.; Tchernychova, E.; Würschum, R.

    2010-09-01

    Oxide nanoparticles were used as carrier for organic semiconductor materials. Stable suspensions of ZrO2 nanoparticles coated with anthracene, pentacene, or para-hexaphenyl were obtained by microwave plasma synthesis of ZrO2 cores, subsequent in situ coating with organic compounds, and in situ dispersion in ethylene glycol. Powders of coated oxide nanoparticles were synthesized for comparison. The successful coating and a small uniform size distribution of the ZrO2 cores were confirmed by comprehensive characterization including photoluminescence, absorption spectroscopy, electron microscopy, electron energy loss spectroscopy, mass spectrometry, and X-ray diffraction. Powder compacts of anthracene-coated ZrO2 particles showed good air stability and a significant blue shift accompanied by an attenuation of the emission lines at higher vibronic orders in comparison to samples of pure anthracene as received. For para-hexaphenyl-coated nanoparticles, the same photoluminescence characteristics are observed as for pure para-hexaphenyl. In the case of pentacene-coated nanoparticles indication for degradation is found.

  16. Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-11-01

    We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

  17. Gigahertz to terahertz tunable all-optical single-side-band microwave generation via semiconductor optical amplifier gain engineering.

    PubMed

    Li, Fangxin; Helmy, Amr S

    2013-11-15

    We propose and demonstrate a technique to generate low-noise broadly tunable single-side-band microwaves using cascaded semiconductor optical amplifiers (SOAs) using no RF bias. The proposed technique uses no RF components and is based on polarization-state controlled gain-induced four-wave mixing in SOAs. Microwave generation from 40 to 875 GHz with a line-width ~22 KHz is experimentally demonstrated.

  18. Semiconductor hollow optical waveguides formed by omni-directional reflectors

    NASA Astrophysics Data System (ADS)

    Lo, Shih-Shou; Wang, Mou-Sian; Chen, Chii-Chang

    2004-12-01

    In this study, a hollow optical waveguide with omni-directional reflectors in silicon-based materials was design, fabricated and characterized. By using dry etching technique, plasma-enhanced chemical vapor deposition for Si/SiO2 thin films and covering another wafer with omni-directional reflector together, the waveguides can be formed with an air core of 1.2μm x 1.3μm. A uniform propagation loss of the waveguide to be around 1.7dB/cm for C+L band was found for the TE and TM modes. Polarization-independent hollow optical waveguides were obtained with the hollow waveguide structure.

  19. Optical bistability and hysteresis of a hybrid metal-semiconductor nanodimer

    NASA Astrophysics Data System (ADS)

    Malyshev, A. V.; Malyshev, V. A.

    2011-07-01

    Optical response of an artificial composite nanodimer comprising a semiconductor quantum dot and a metal nanosphere is analyzed theoretically. We show that internal degrees of freedom of the system can manifest bistability and optical hysteresis as functions of the incident field intensity. We argue that these effects can be observed for real-world systems, such as a CdSe quantum dot and an Au nanoparticle hybrid. These properties can be revealed by measuring the optical hysteresis of Rayleigh scattering. We also show that the total dipole moment of the system can be switched abruptly between its two stable states by small changes in the excitation intensity. The latter promises various applications in the field of all-optical processing at the nanoscale, the most basic of them being the volatile optical memory.

  20. Radio-over-fiber AM-to-FM upconversion using an optically injected semiconductor laser.

    PubMed

    Chan, Sze-Chun; Hwang, Sheng-Kwang; Liu, Jia-Ming

    2006-08-01

    A radio-over-fiber system uses light to carry a microwave subcarrier on optical fibers. The microwave is usually frequency modulated for wireless broadcasting. A conventional optical communication system usually operates at the baseband with amplitude modulation. The interface of the two systems thus needs an upconversion from the baseband to the microwave band with AM-to-FM transformation. An all-optical solution employing an optically injected semiconductor laser is investigated. The laser is operated in a dynamic state, where its intensity oscillates at a microwave frequency that varies with the injection strength. When the injection carries AM data, the microwave is frequency modulated accordingly. We demonstrate optical conversion from an OC-12 622-Mbps AM baseband signal to the corresponding FM microwave signal. The microwave is centered at 15.90 GHz. A bit-error rate of less than 10(-9) is measured.

  1. Coherent optical spectroscopy in a biological semiconductor quantum dot-DNA hybrid system

    NASA Astrophysics Data System (ADS)

    Li, Jin-Jin; Zhu, Ka-Di

    2012-02-01

    We theoretically investigate coherent optical spectroscopy of a biological semiconductor quantum dot (QD) coupled to DNA molecules. Coupling with DNAs, the linear optical responses of the peptide QDs will be enhanced significantly in the simultaneous presence of two optical fields. Based on this technique, we propose a scheme to measure the vibrational frequency of DNA and the coupling strength between peptide QD and DNA in all-optical domain. Distinct with metallic quantum dot, biological QD is non-toxic and pollution-free to environment, which will contribute to clinical medicine experiments. This article leads people to know more about the optical behaviors of DNAs-quantum dot system, with the currently popular pump-probe technique.

  2. Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

    NASA Technical Reports Server (NTRS)

    Suematsu, Y.; Iga, K.

    1980-01-01

    Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

  3. Simple laser velocimeter that uses photoconductive semiconductors to measure optical frequency differences.

    PubMed

    Wang, C C; Davidson, F; Trivedi, S

    1995-10-01

    The dc photocurrents generated by steady-state moving space-charge fields inside photoconductive semiconductors containing deep level donors and traps can be used to determine the relative frequency differences between the two interfering optical fields that establish the space-charge fields. A simple laser velocimeter that uses a semi-insulating GaAs:Cr sample to detect the Doppler frequency shift between two laser beams is demonstrated.

  4. Generation of high-power ultrashort optical pulses by semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Dudelev, V. V.; Zazulin, S. V.; Kolykhalova, E. D.; Losev, S. N.; Deryagin, A. G.; Kuchinskii, V. I.; Efanov, M. V.; Sokolovskii, G. S.

    2016-12-01

    Fiber-coupled semiconductor lasers have been studied when pumped by high-power short electrical pulses of 5 ns width and leading front duration below 1 ns. In this pumping regime, it is possible to ensure significant sharpening of output pulses, the duration of which decreases below 80 ps for a single-mode laser and below 120 ps for a broad aperture multimode laser at an output peak optical power as high as 1.5 and 27 W, respectively.

  5. Methods and devices for optimizing the operation of a semiconductor optical modulator

    DOEpatents

    Zortman, William A.

    2015-07-14

    A semiconductor-based optical modulator includes a control loop to control and optimize the modulator's operation for relatively high data rates (above 1 GHz) and/or relatively high voltage levels. Both the amplitude of the modulator's driving voltage and the bias of the driving voltage may be adjusted using the control loop. Such adjustments help to optimize the operation of the modulator by reducing the number of errors present in a modulated data stream.

  6. High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

    PubMed

    Di Pietro, Riccardo; Sirringhaus, Henning

    2012-07-03

    We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer.

  7. Tunable fractional-order photonic differentiator using a distributed feedback semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Sun, Shuqian; Deng, Ye; Zhu, Ninghua; Li, Ming

    2016-03-01

    We propose a tunable fractional-order photonic differentiator based on a distributed feedback semiconductor optical amplifier (SOA) working in reflection mode. The phase shift at the resonant wavelength can be adjusted by controlling the current injected into the DFB-SOA, which can implement the fractional-order differentiation. A 60 ps Gaussian pulse is temporally differentiated with a tunable order range from 0.7 to 1.3.

  8. Saturated semiconductor optical amplifier phase modulation for long range laser radar applications.

    PubMed

    Carns, Jennifer L; Duncan, Bradley D; Dierking, Matthew P

    2012-08-20

    We investigate the use of a semiconductor optical amplifier operated in the saturation regime as a phase modulator for long range laser radar applications. The nature of the phase and amplitude modulation resulting from a high peak power Gaussian pulse, and the impact this has on the ideal pulse response of a laser radar system, is explored. We also present results of a proof-of-concept laboratory demonstration using phase-modulated pulses to interrogate a stationary target.

  9. Ab initio study of optical absorption spectra of semiconductors and conjugated polymers

    SciTech Connect

    Tiago, M.L.; Chang, Eric K.; Rohlfing, Michael; Louie, Steven G.

    2000-04-30

    The effects of electron-hole interaction on the optical properties of a variety of materials have been calculated using an ab initio method based on solving the Bethe-Salpeter equation. Results on selected semiconductors, insulators, and semiconducting polymers are presented. In the cases of alpha-quartz (SiO2) and poly-phenylene-vinylene, resonant excitonic states qualitatively alter the absorption spectra.

  10. The Deposition of Electro-Optic Films on Semiconductors

    DTIC Science & Technology

    1994-09-26

    Optical Waveguides," I ~T. M . Graettinger, D. J. Lichtenwalner, A. F. Chow, 0. Auciello, and A. I. Kingon, ISIF 1994 Proceedings, submitted to Integrated3...Ferroelectrics. Appendix 2. "Growth of Epitaxial KNbO3 Thin Films," Thomas M . Graettinger,I P. A. Morris, A. Roshko, A. I. Kingon, 0. Auciello, D. J...34Epitaxial KNb03 Thin Films on KTa03, MgAI204, and MgO Substrates,ŗ A. F. Chow, D. J. Lichtenwalner, R. R. Woolcott, Jr., T. M . Gatigr 0. Auciello, and A. I

  11. The Deposition of Electro-Optic Films on Semiconductors

    DTIC Science & Technology

    1993-10-08

    Electro - optic properties of KNbO3 films on MgO are found to be similar to bulk, although the scattering losses are very high for these films. In comparison KNbO3 films grown on KTaO3 exhibit low losses of less than 8 dB, while losses for films on spinel showed to be in between those two. The variety of substrates provide us with differences in lattice mismatch, refractive index mismatch, surface morphologies, and microstructure, all of which influence loss

  12. All-optical noninvasive chaos control of a semiconductor laser.

    PubMed

    Schikora, S; Wünsche, H-J; Henneberger, F

    2008-08-01

    We demonstrate experimentally control of a chaotic system on time scales much shorter than in any previous study. Combining a multisection laser with an external Fabry-Perot etalon, the chaotic output transforms into a regular intensity self-pulsation with a frequency in the 10-GHz range. The control is noninvasive as the feedback from the etalon is minimum when the target state is reached. The optical phase is identified as a crucial control parameter. Numerical simulations agree well with the experimental data and uncover global control properties.

  13. Recent Advances in Optically Controlled Bulk Semiconductor Switches

    DTIC Science & Technology

    1985-06-01

    REO!NT AIJifl,NCES IN (FTICALIX ~1Ra.LW IILK SHttiaHlOCIOR swrrams L. Bovino , T. Burke, R. Youmans, M. Weiner, J. Carter U.S. Ar~ Electronics...fabrication of all of our optically activated switches. B.e.fer.enc.es. 1. L. Bovino , R. Youmans, T. Burke, M.Weiner, "Modulator Circuits Using Q...tically Activated Switches", Record of 16th Power Modulator SYJll>o- siurn, pp 235-239, June 1984. 2. M. Weiner, T. Burke, R. Youmans, L. Bovino , J

  14. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    NASA Astrophysics Data System (ADS)

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-08-01

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception-and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In2O3 (ITO)-converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein-Moss shift that are consistent with previous studies on In2O3 single crystals and thin films.

  15. Two semiconductor ring lasers coupled by a single-waveguide for optical memory operation

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Coomans, Werner; Gelens, Lendert

    2014-05-01

    Semiconductor ring lasers are semiconductor lasers where the laser cavity consists of a ring-shaped waveguide. SRLs are highly integrable and scalable, making them ideal candidates for key components in photonic integrated circuits. SRLs can generate light in two counterpropagating directions between which bistability has been demonstrated. Hence, information can be coded into the emission direction. This bistable operation allows SRLs to be used in systems for all-optical switching and as all-optical memories. For the demonstration of fast optical flip-flop operation, Hill et al. [Nature 432, 206 (2004)] fabricated two SRLs coupled by a single waveguide, rather than a solitary SRL. Nevertheless, the literature shows that a single SRL can also function perfectly as an all-optical memory. In our recent paper [W. Coomans et al., Phys. Rev. A 88, 033813, (2013)], we have raised the question whether coupling two SRLs to realize a single optical memory has any advantage over using a solitary SRL, taking into account the obvious disadvantage of a doubled footprint and power consumption. To provide the answer, we have presented in that paper a numerical study of the dynamical behavior of semiconductor ring lasers coupled by a single bus waveguide, both when weakly coupled and when strongly coupled. We have provided a detailed analysis of the multistable landscape in the coupled system, analyzed the stability of all solutions and related the internal dynamics in the individual lasers to the field effectively measured at the output of the waveguide. We have shown which coupling phases generally promote instabilities and therefore need to be avoided in the design. Regarding all-optical memory operation, we have demonstrated that there is no real advantage for bistable memory operation compared to using a solitary SRL. An increased power suppression ratio has been found to be mainly due to the destructive interference of the SRL fields at the low power port. Also

  16. Semiconductor optical amplifiers for the 1000-1100-nm spectral range

    SciTech Connect

    Lobintsov, A A; Shramenko, M V; Yakubovich, S D

    2008-07-31

    Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

  17. Enhanced 10 Gb/s operations of directly modulated reflective semiconductor optical amplifiers without electronic equalization.

    PubMed

    Presi, M; Chiuchiarelli, A; Corsini, R; Choudury, P; Bottoni, F; Giorgi, L; Ciaramella, E

    2012-12-10

    We report enhanced 10 Gb/s operation of directly modulated bandwidth-limited reflective semiconductor optical amplifiers. By using a single suitable arrayed waveguide grating we achieve simultaneously WDM demultiplexing and optical equalization. Compared to previous approaches, the proposed system results significantly more tolerant to seeding wavelength drifts. This removes the need for wavelength lockers, additional electronic equalization or complex digital signal processing. Uniform C-band operations are obtained experimentally with < 2 dB power penalty within a wavelength drift of 10 GHz (which doubles the ITU-T standard recommendations).

  18. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, R.J.; Benett, W.J.; Mills, S.T.

    1997-04-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

  19. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, Raymond J.; Benett, William J.; Mills, Steven T.

    1997-01-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

  20. Optical characterization of individual semiconductor nanostructures using a scanning tunneling microscope.

    PubMed

    Tsuruoka, Tohru; Ushioda, Sukekatsu

    2004-01-01

    By injecting low-energy minority carriers from the tip of a scanning tunneling microscope (STM) and analyzing the light emitted from the tip-sample gap of the STM, it is possible to study the optical and electronic properties of individual semiconductor nanostructures with an extremely high spatial resolution close to the atomic scale. This technique has been applied to investigate the transport properties of hot electrons injected into AlGaAs/GaAs quantum well structures and the optical properties of single self-assembled InAs/AlGaAs quantum dots. The physical principles, usefulness and future expectations of this novel technique are discussed.

  1. Tunable directly modulated fiber ring laser using a reflective semiconductor optical amplifier for WDM access networks.

    PubMed

    Lin, Zih-Rong; Liu, Cheng-Kuang; Jhang, Yu-Jhu; Keiser, Gerd

    2010-08-16

    We have proposed a stable, wideband, and tunable directly modulated fiber ring laser (TDMFRL) by using a reflective semiconductor optical amplifier (RSOA) and an optical tunable filter (OTF). For use in a bidirectional access network, the TDMFRL not only generates downstream data traffic but also serves as the wavelength-selecting injection light source for the Fabry-Pérot laser diode (FP-LD) located at the subscriber site. We experimentally demonstrated a bidirectional transmission at 1.25-Gb/s direct modulation over a 25-km single-mode fiber (SMF), thereby showing good performance in a wavelength division multiplexing (WDM) access network.

  2. Optical clock division based on dual-wavelength mode-locked semiconductor fiber ring laser.

    PubMed

    Zhang, Weiwei; Sun, Junqiang; Wang, Jian; Zhang, Xingliang; Huang, Dexiu

    2008-07-21

    We have reported the optical clock division utilizing an injected mode-locked fiber ring laser incorporating semiconductor optical amplifiers (SOAs) and a dispersion compensation fiber (DCF). The clock division is mainly caused by the modulation competition between two wavelength components while both of them satisfy the harmonic mode-locking condition at the newly generated frequency. Stable second, third, and fourth clock divisions are obtained by properly adjusting the polarization controllers inside the ring cavity when a 10-GHz clock signal without any sub-harmonic frequency component is injected into the cavity. The radio-frequency spectra show good qualities of the obtained clock division trains.

  3. Optically driven Archimedes micro-screws for micropump application.

    PubMed

    Lin, Chih-Lang; Vitrant, Guy; Bouriau, Michel; Casalegno, Roger; Baldeck, Patrice L

    2011-04-25

    Archimedes micro-screws have been fabricated by three-dimensional two-photon polymerization using a Nd:YAG Q-switched microchip laser at 532nm. Due to their small sizes they can be easily manipulated, and made to rotate using low power optical tweezers. Rotation rates up to 40 Hz are obtained with a laser power of 200 mW, i.e. 0.2 Hz/mW. A photo-driven micropump action in a microfluidic channel is demonstrated with a non-optimized flow rate of 6 pL/min. The optofluidic properties of such type of Archimedes micro-screws are quantitatively described by the conservation of momentum that occurs when the laser photons are reflected on the helical micro-screw surface.

  4. Intrinsic optical bistability in a strongly driven Rydberg ensemble

    NASA Astrophysics Data System (ADS)

    de Melo, Natalia R.; Wade, Christopher G.; Šibalić, Nikola; Kondo, Jorge M.; Adams, Charles S.; Weatherill, Kevin J.

    2016-06-01

    We observe and characterize intrinsic optical bistability in a dilute Rydberg vapor. The bistability is characterized by sharp jumps between states of low and high Rydberg occupancy with jump-up and -down positions displaying hysteresis depending on the direction in which the control parameter is changed. We find that the shift in frequency of the jump point scales with the fourth power of the principal quantum number. Also, the width of the hysteresis window increases with increasing principal quantum number, before reaching a peak and then closing again. The experimental results are consistent with predictions from a simple theoretical model based on semiclassical Maxwell-Bloch equations including the effects of interaction-induced broadening and level shifts. These results provide insight into the dynamics of driven dissipative systems.

  5. Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-10-01

    We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

  6. Spontaneous locking of optical vortices in coupled semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Yadin, Yoav; Scheuer, Jacob; Gross, Yoav; Orenstein, Meir

    2014-09-01

    Non-conventional emission of light, comprising engaged rotating light cogs, is measured and analyzed. The source of this unique emission is an array of coupled surface emitting lasers, each emitting an optical vortex. The complex rotating light structures are formed spontaneously by specific combinations of the individual vortices, each carrying two types of "charge": orbital angular momentum (±1 topological charge) and a relative engagement phase (0 or π). These charges determine the specific form in which the individual rotating fields are engaged to generate the emanated light gear. The experimentally observed formations and dynamic evolution of the light gears stem from the complex nonlinear dynamics of the coupled rotating-field emitters, a mechanism which we have successfully modeled and utilized for interpreting the obtained results. The engaged light gears can be used in controlled generation and transmission of multiple degrees of freedom photons, for high-bit-rate classic and quantum telecommunications, particle manipulation, and super-resolution imaging.

  7. Controlling of the optical properties of the solutions of the PTCDI-C8 organic semiconductor

    NASA Astrophysics Data System (ADS)

    Erdoğan, Erman; Gündüz, Bayram

    2016-09-01

    N,N'-Dioctyl-3,4,9,10 perylenedicarboximide (PTCDI-C8) organic semiconductor have vast applications in solar cells, thermoelectric generators, thin film photovoltaics and many other optoelectronic devices. These applications of the materials are based on their spectral and optical properties. The solutions of the PTCDI-C8 for different molarities were prepared and the spectral and optical mesaurements were analyzed. Effects of the molarities on optical properties were investigated. Vibronic structure has been observed based on the absorption bands of PTCDI-C8 semiconductor with seven peaks at 2.292, 2.451, 2.616, 3.212, 3.851, 4.477 and 4.733 eV. The important spectral parameteres such as molar/mass extinction coefficients, absorption coefficient of the PTCDI-C8 molecule were calculated. Optical properties such as angle of incidence/refraction, optical band gap, real and imaginary parts of dielectric constant, loss factor and electrical susceptibility of the the PTCDI-C8 were obtained. Finally, we discussed these parameters for optoelectronic applications and compared with related parameters in literature.

  8. Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, Xiaoli

    1989-01-01

    Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

  9. Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

    SciTech Connect

    Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

    2007-11-01

    We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity.

  10. Nonlinear optics response of semiconductor quantum wells under high magnetic fields

    SciTech Connect

    Chemla, D.S.

    1993-07-01

    Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW`s as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H {yields} {infinity}. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed.

  11. Two-Color Coherent Control of Optical Bistability in Asymmetric Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Li, Jia-Hua; Hao, Xiang-Ying

    We investigate optical bistability in intersubband transitions of an asymmetric semiconductor quantum well structure that has equidistant transitions between three subbands of the system and is placed in a unidirectional cavity. The system is simultaneously coupled by a fundamental field and its second harmonic. The second harmonic field acts as a control field and significantly influences the optical bistability. In addition, the two-color coherent control of optical bistability by the relative phase of the fundamental and the second harmonic fields is shown. The influence of the electronic cooperation parameter on the OB behavior is also discussed. This investigation may be used for optimizing and controlling the optical switching process in the SQW solid-state system, which is much more practical than that in the atomic system because of its flexible design and the controllable interference strength.

  12. The optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

    PubMed

    Qiu, Zong-Bo; Zhu, Xin-Jun; Li, Fang-Min; Liu, Xiao; Yue, Ming

    2007-07-01

    Lasers have been widely used in the field of biology along with the development of laser technology, but the mechanism of the bio-effect of lasers is not explicit. The objective of this paper was to test the optical effect of a laser on protecting wheat from UV-B damage. A patent instrument was employed to emit semiconductor laser (wavelength 650 nm) and incoherent red light, which was transformed from the semiconductor laser. The wavelength, power and lightfleck diameter of the incoherent red light are the same as those of the semiconductor laser. The semiconductor laser (wavelength 650 nm, power density 3.97 mW mm(-2)) and incoherent red light (wavelength 650 nm, power density 3.97 mW mm(-2)) directly irradiated the embryo of wheat seeds for 3 min respectively, and when the seedlings were 12-day-old they were irradiated by UV-B radiation (10.08 kJ m(-2)) for 12 h in the dark. Changes in the concentration of malondialdehyde (MDA), hydrogen peroxide (H(2)O(2)), glutathione (GSH), ascorbate (AsA), carotenoids (CAR), the production rate of superoxide radical (O(2)(-)), the activities of peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) and the growth parameters of seedlings (plant height, leaf area and fresh weight) were measured to test the optical effect of the laser. The results showed that the incoherent red light treatment could not enhance the activities of SOD, POD and CAT and the concentration of AsA and CAR. When the plant cells were irradiated by UV-B, the incoherent red light treatment could not eliminate active oxygen and prevent lipid peroxidation in wheat. The results also clearly demonstrate that the plant DNA was damaged by UV-B radiation and semiconductor laser irradiance had the capability to protect plants from UV-B-induced DNA damage, while the incoherent red light could not. This is the first investigation reporting the optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

  13. Exact matter-wave vortices in a driven optical lattice

    NASA Astrophysics Data System (ADS)

    Deng, Yan; Hai, Wenhua; Zhou, Zheng

    2013-07-01

    We investigate vortex dynamics of a periodically driven Bose-Einstein condensate confined in a spatially two-dimensional optical lattice. An exact Floquet solution of the Gross-Pitaevskii equation is obtained for a certain parameter region which can be divided into the phase-jumping and phase-continuing regions. In the former region, the exact solution can describe spatiotemporal evolution of multiple vortices. For a small ratio of driving strength to optical lattice depth the vortices keep nearly unmoved. With the increase of the ratio, the vortices undergo an effective interaction and periodically evolve along some fixed circular orbits that leads the vortex dipoles and quadrupoles to produce and break alternatively. There is a critical ratio in the phase-jumping region beyond which the vortices generate and melt periodically. In the phase-continuing region, the condensate in the exact Floquet state evolves periodically without zero-density nodes. It is numerically demonstrated that the exact solution is stable under an initial perturbation for both parameter regions, except for a subregion of the phase-jumping region in which stability of the condensate is lost. However, the solution is structurally stable under a small parameter perturbation only for the phase-continuing region, while for the whole phase-jumping region the structural stability is destroyed. The results suggest a scheme for creating and controlling matter-wave vortices.

  14. A study on the optical parts for a semiconductor laser module

    NASA Astrophysics Data System (ADS)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik; Jang, Kwang-Ho; Kang, Seung-Goo

    2014-11-01

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  15. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    NASA Astrophysics Data System (ADS)

    Bakry, A.; Abdulrhmann, S.; Ahmed, M.

    2016-06-01

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  16. Optical waveguide beam splitters based on hybrid metal-dielectric-semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Yunyun; Liang, Junwu; Zhang, Qinglin; Zhou, Zidong; Li, Honglai; Fan, Xiaopeng; Wang, Xiaoxia; Fan, Peng; Yang, Yankun; Guo, Pengfei; Zhuang, Xiujuan; Zhu, Xiaoli; Liao, Lei; Pan, Anlian

    2015-11-01

    Miniature integration is desirable for the future photonics circuit. Low-dimensional semiconductor and metal nanostructures is the potential building blocks in compact photonic circuits for their unique electronic and optical properties. In this work, a hybrid metal-dielectric-semiconductor nanostructure is designed and fabricated to realizing a nano-scale optical waveguide beam splitter, which is constructed with the sandwiched structure of a single CdS nanoribbon/HfO2 thin film/Au nanodisk arrays. Micro-optical investigations reveal that the guided light outputting at the terminal end of the CdS ribbon is well separated into several light spots. Numerical simulations further demonstrate that the beam splitting mechanism is attributed to the strong electromagnetic coupling between the Au nanodisks and light guided in the nanoribbon. The number of the split beams (light spots) at the terminal end of the nanoribbon is mainly determined by the number of the Au nanodisk rows, as well as the distance of the blank region between the nanodisks array and the end of the CdS ribbon, owing to the interference between the split beams. These optical beam splitters may find potential applications in high-density integrated photonic circuits and systems.

  17. Optical absorption in semiconductor quantum dots coupling to dispersive phonons of infinite modes

    NASA Astrophysics Data System (ADS)

    Ding, Zhiwen; Wang, Qin; Zheng, Hang

    2012-10-01

    Optical absorption spectrum of semiconductor quantum dot is investigated by means of an analytical approach based on the Green's function for different forms of coupling strength in an unified method by using the standard model with valence and conduction band levels coupled to dispersive quantum phonons of infinite modes. The analytical expression of the optical absorption coefficient in semiconductor quantum dots is obtained and by this expression the line shape and the peak position of the absorption spectrum are procured. The relation between the properties of absorption spectrum and the forms of coupling strength is clarified, which can be referenced for choosing the proper form of the coupling strength or spectral density to control the features of absorption spectrum of quantum dot. The coupling and confinement induced energy shift and intensity decrease in the absorption spectrum are determined precisely for a wide range of parameters. The results show that the activation energy of the optical absorption is reduced by the effect of exciton-phonon coupling and photons with lower frequencies could also be absorbed in absorption process. With increase of the coupling constant, the line shape of optical absorption spectrum broadens and the peak position moves to lower photon energy with a rapid decrease in intensity at the same time. Both the coupling induced red shift and the confinement induced blue shift conduce to decrease in the intensity of absorption spectrum. Furthermore, this method may have application potential to other confined quantum systems.

  18. Electrical and optical conductivities of hole gas in p-doped bulk III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Mawrie, Alestin; Halder, Pushpajit; Ghosh, Barun; Ghosh, Tarun Kanti

    2016-09-01

    We study electrical and optical conductivities of hole gas in p-doped bulk III-V semiconductors described by the Luttinger Hamiltonian. We provide exact analytical expressions of the Drude conductivity, inverse relaxation time for various impurity potentials, Drude weight, and optical conductivity in terms of the Luttinger parameters γ1 and γ2. The back scattering is completely suppressed as a result of the helicity conservation of the heavy and light hole states. The energy dependence of the relaxation time for the hole states is different from the Brooks-Herring formula for electron gas in n-doped semiconductors. We find that the inverse relaxation time of heavy holes is much less than that of the light holes for Coulomb-type and Gaussian-type impurity potentials and vice-versa for a short-range impurity potential. The Drude conductivity increases non-linearly with the increase in the hole density. The exponent of the density dependence of the conductivity is obtained in the Thomas-Fermi limit. The Drude weight varies linearly with the density even in the presence of the spin-orbit coupling. The finite-frequency optical conductivity goes as √{ ω} , and its amplitude strongly depends on the Luttinger parameters. The Luttinger parameters can be extracted from the optical conductivity measurement.

  19. Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors.

    PubMed

    Nashy, El-Shahat H A; Al-Ashkar, Emad; Moez, A Abdel

    2012-02-01

    Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

  20. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    PubMed Central

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-01-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles. PMID:26314911

  1. Optical properties of semiconductor-metal composite thin films in the infrared region

    NASA Astrophysics Data System (ADS)

    Nagendra, C. L.; Lamb, James L.

    1995-07-01

    Germanium:silver (Ge:Ag) composite thin films having different concentrations of Ag, ranging from 7% to 40%, have been prepared by dc cosputtering of Ge and Ag. The films' surface morphology and optical properties have been characterized using transmission electron microscopy and infrared spectrophotometry. It is seen that, although the films that contain lower concentrations of Ag have islandlike morphology (i.e., Ag particles distributed in a Ge matrix), the higher metallic concentration films tend to have a symmetric distribution of Ag and Ge. The optical constants (i.e., refractive index n and absorption index k) derived from the measured optical properties show a semiconductor behavior even as high as 40% of Ag concentration, beyond which the metallic properties dominate over the entire infrared spectrum. Comparison of the n and k data with the two well-known effective medium theories, namely, the Maxwell-Garnett theory and the Bruggeman theory, shows that both theories have limited scope in predicting the optical properties of semiconductor-metal composite films in the infrared region. However, an empirical polynomial equation can simulate the experimental

  2. Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors

    NASA Astrophysics Data System (ADS)

    Nashy, El-Shahat H. A.; Al-Ashkar, Emad; Abdel Moez, A.

    2012-02-01

    Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

  3. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    NASA Astrophysics Data System (ADS)

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-08-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles.

  4. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching.

    PubMed

    Born, Brandon; Krupa, Jeffrey D A; Geoffroy-Gagnon, Simon; Holzman, Jonathan F

    2015-08-28

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles.

  5. Optical modeling of induction-linac driven free-electron lasers

    SciTech Connect

    Scharlemann, E.T.; Fawley, W.M.

    1986-03-31

    The free-electron laser (FEL) simulation code FRED, developed at Lawrence Livermore National Laboratory (LLNL) primarily to model single-pass FEL amplifiers driven by induction linear accelerators, is described. The main emphasis is on the modeling of optical propagation in the laser and on the differences between the requirements for modeling rf-linac-driven vs. induction-linac-driven FELs. Examples of optical guiding and mode cleanup are presented for a 50 ..mu..m FEL.

  6. Optical injection of quantum dash semiconductor lasers at 1550nm for tunable photonic oscillators

    NASA Astrophysics Data System (ADS)

    Pochet, M.; Naderi, N. A.; Kovanis, V.; Lester, L. F.

    2011-02-01

    In this manuscript, we will theoretically compute and experimentally investigate the dynamics of an optically injected nanostructure laser as a function of the injection strength and the optical detuning frequency. A model describing the optically-injected semiconductor laser is derived in dimensionless format that accounts for the large nonlinear gain component associated with nanostructure semiconductor lasers through the gain coefficient's derivative with respect to perturbations in the carrier and photon density. The nonlinear gain (carrier) relaxation rate and gain compression coefficient account for the perturbation in the slave laser's photon density, and are theoretically shown to have a strong impact on the level of stability exhibited by the optically-injected laser. The theoretical model is experimentally verified through the optical-injection of a quantum-dash Fabry-Perot laser at an operating wavelength of 1550 nm. The quantum-dash laser's large damping rate and sufficiently small linewidth enhancement factor are observed to inhibit period-doubling and chaotic operation under zero frequency-detuning conditions. Additionally, the optically injected quantum-dash laser is found to exhibit a large period-one operational state as the injection strength and the detuning frequency are varied, resulting in a highly tunable microwave frequency in the coupled system's equilibrium state. The enhanced and undamped relaxation oscillations of the period-one state are discussed as a building block for tunable photonic oscillators in various RF photonics applications. Finally a path towards realizing an optically-injected diode laser with a THz resonance frequency will be reviewed.

  7. Design and analysis of various multifunctional operations at ultrahigh speed by using a semiconductor optical amplifier-Mach-Zehnder interferometer

    NASA Astrophysics Data System (ADS)

    Lovkesh; Marwaha, Anupma

    2016-03-01

    Various multifunctional operations are performed by proposing designs of optical adder, subtractor, comparator, and decoder at 60 Gb/s. In all operations, constructive interference is produced by choosing optimized parameters, i.e., optical pulse generator power, input power, semiconductor optical amplifier-Mach-Zehnder interferometer parameters, and so on, for delivering a true output signal. An optical pulse-generated signal is required for all operations except addition, subtraction and equal to in a comparator.

  8. Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

    2003-01-01

    Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

  9. Chaos synchronization based on a continuous chaos control method in semiconductor lasers with optical feedback.

    PubMed

    Murakami, A; Ohtsubo, J

    2001-06-01

    Chaos synchronization using a continuous chaos control method was studied in two identical chaotic laser systems consisting of semiconductor lasers and optical feedback from an external mirror. Numerical calculations for rate equations indicate that the stability of chaos synchronization depends significantly on the external mirror position. We performed a linear stability analysis for the rate equations. Our results show that the stability of the synchronization is much influenced by the mode interaction between the relaxation oscillation frequency of the semiconductor laser and the external cavity frequency. Due to this interaction, an intensive mode competition between the two frequencies destroys the synchronization, but stable synchronization can be achieved when the mode competition is very weak.

  10. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

    DOE PAGES

    Donev, E. U.; Suh, J. Y.; Lopez, R.; ...

    2008-01-01

    We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model.more » The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.« less

  11. Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots

    SciTech Connect

    Zhu, J.G.; White, C.W.; Withrow, S.P.

    1996-11-01

    Nanocrystals of semiconductor materials have been fabricated in SiO{sub 2} by ion implantation and subsequent thermal annealing. Strong red photoluminescence (PL) peaked around 750 nm has been observed in samples containing Si nanocrystals in SiO{sub 2}. The Si nanocrystals in the samples with optimized PL intensities are a few nanometers in diameter. Difference in the absorption bandgap energies and the PL peak energies are discussed. Significant influence of implantation sequence on the formation of compound semiconductor nanocrystals are demonstrated with the GaAs in the SiO{sub 2} system. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage if Ga is implanted first. A single surface phonon mode has been observed in the infrared reflectance measurement from samples containing GaAs nanocrystals.

  12. Goos–Hänchen effect for optical vibrational modes in a semiconductor structure

    NASA Astrophysics Data System (ADS)

    Villegas, Diosdado; Arriaga, J.; de León-Pérez, Fernando; Pérez-Álvarez, R.

    2017-03-01

    We study the tunneling of optical vibrational modes with transverse horizontal polarization that impinge, at a given angle, on a semiconductor heterostructure. We find a large influence of the Goos–Hänchen shift on tunneling times. In particular, a Goos–Hänchen shift larger than the barrier thickness is reported for the first time. The relation between Goos–Hänchen and Hartman effects is also discussed. The identity that equals the dwell time to the sum of transmission and interference times, previously derived for one-dimensional tunneling problems, is extended to the two-dimensional case. Closed-form expressions are developed for the relevant quantities. Instead of using the standard approach, the interference time is computed from the vibrational energy density. The present study could be useful for the design of semiconductor devices.

  13. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    SciTech Connect

    Kim, Chang-Hwan

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  14. Goos-Hänchen effect for optical vibrational modes in a semiconductor structure.

    PubMed

    Villegas, Diosdado; Arriaga, J; de León-Pérez, Fernando; Pérez-Álvarez, R

    2017-03-29

    We study the tunneling of optical vibrational modes with transverse horizontal polarization that impinge, at a given angle, on a semiconductor heterostructure. We find a large influence of the Goos-Hänchen shift on tunneling times. In particular, a Goos-Hänchen shift larger than the barrier thickness is reported for the first time. The relation between Goos-Hänchen and Hartman effects is also discussed. The identity that equals the dwell time to the sum of transmission and interference times, previously derived for one-dimensional tunneling problems, is extended to the two-dimensional case. Closed-form expressions are developed for the relevant quantities. Instead of using the standard approach, the interference time is computed from the vibrational energy density. The present study could be useful for the design of semiconductor devices.

  15. Applications of Non-Crystalline Materials — C. REAL TIME OPTICAL RECORDING ON THIN FILMS OF AMORPHOUS SEMICONDUCTORS

    NASA Astrophysics Data System (ADS)

    Mitkova, Maria

    The following sections are included: * Introduction * Amorphous Semiconductors as Optical Storage Medium * Principles and Results on Real-time Optical Recording * Digital optical recording * Digital optical recording due to ablation of the films by illumination with light * Digital optical recording due to coagulation of an island film * Digital optical recording due to phase transition * Digital optical recording due to photoinduced surface deposition of metallic silver * Principles of holographic recording * Recording and readout * Classification of the holograms * Diffraction efficiency * Results in holographic recording on chalcogenide glasses * Future Trends * Acknowledgments * References

  16. A novel method of developing all-optical frequency encoded memory unit exploiting nonlinear switching character of semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Kumar Garai, Sisir; Mukhopadhyay, Sourangshu

    2010-10-01

    The very fast running optical memory and optical logic gates are the basic building blocks for any optical computing data processing system. Realization of a very fast memory-cell in the optical domain is very challenging. In the last two decades many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitation because of low switching response of the active devices. In our present communication the authors propose a method of developing a frequency encoded memory unit based on the switching action of semiconductor optical amplifier (SOA). Nonlinear polarization rotation characters of SOA and 'SOA based Mach-Zehnder Interferometer' switch, i.e. 'SOA-MZI' switch, are exploited for the purpose of some switching action with least switching power (<-3 dB m) and high switching contrast ratio (20 dB). Here two logic states ('0' state and '1' state) of the memory is encoded by two different frequencies, which will remain unchanged throughout the data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. Though the SOA based switch runs with the operational speed 100 Gb/s, still due to the presence of the other optical components in the memory unit, the overall speed of the proposed system will come down to 10 Gb/s.

  17. Optical devices combining an organic semiconductor crystal with a two-dimensional inorganic diffraction grating

    SciTech Connect

    Kitazawa, Takenori; Yamao, Takeshi Hotta, Shu

    2016-02-01

    We have fabricated optical devices using an organic semiconductor crystal as an emission layer in combination with a two-dimensional (2D) inorganic diffraction grating used as an optical cavity. We formed the inorganic diffraction grating by wet etching of aluminum-doped zinc oxide (AZO) under a 2D cyclic olefin copolymer (COC) diffraction grating used as a mask. The COC diffraction grating was fabricated by nanoimprint lithography. The AZO diffraction grating was composed of convex prominences arranged in a triangular lattice. The organic crystal placed on the AZO diffraction grating indicated narrowed peaks in its emission spectrum under ultraviolet light excitation. These are detected parallel to the crystal plane. The peaks were shifted by rotating the optical devices around the normal to the crystal plane, which reflected the rotational symmetries of the triangular lattice through 60°.

  18. High efficiency 160 Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Han, Huining; Zhang, Fangdi; Yang, Wei; Cai, Libo; Zhang, Min; Ye, Peida

    2007-11-01

    Proposed in this paper is a high efficient 160Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot Semiconductor optical amplifier (QDSOA -TOAD). The performance of the wavelength converter under various operating conditions, such as different injected current densities, input pulse widths and input control pulse energies, is analyzed in terms of contrast ratio (CR) through numerical simulations. With the properly chosen parameters, a wavelength-converted signal with CR over 19.48 can be obtained.

  19. Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction.

    PubMed

    Winget, Paul; Schirra, Laura K; Cornil, David; Li, Hong; Coropceanu, Veaceslav; Ndione, Paul F; Sigdel, Ajaya K; Ginley, David S; Berry, Joseph J; Shim, Jaewon; Kim, Hyungchui; Kippelen, Bernard; Brédas, Jean-Luc; Monti, Oliver L A

    2014-07-16

    The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

  20. Spontaneous dc Current Generation in a Resistively Shunted Semiconductor Superlattice Driven by a Terahertz Field

    SciTech Connect

    Alekseev, K.N.; Cannon, E.H.; McKinney, J.C.; Campbell, D.K.; Alekseev, K.N.; Kusmartsev, F.V.; Alekseev, K.N.; Kusmartsev, F.V.

    1998-03-01

    We study a resistively shunted semiconductor superlattice subject to a high-frequency electric field. Using a balance equation approach that incorporates the influence of the electric circuit, we determine numerically a range of amplitude and frequency of the ac field for which a dc bias and current are generated {ital spontaneously} and show that this region is likely accessible to current experiments. Our simulations reveal that the Bloch frequency corresponding to the spontaneous dc bias is approximately an integer multiple of the ac field frequency. {copyright} {ital 1998} {ital The American Physical Society}

  1. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  2. Demonstration of an Optical Isolator with a Semiconductor Guiding Layer that was Obtained by Use of a Nonreciprocal Phase Shift.

    PubMed

    Yokoi, H; Mizumoto, T; Shinjo, N; Futakuchi, N; Nakano, Y

    2000-11-20

    We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-mum wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.

  3. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    DOE PAGES

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; ...

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less

  4. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    SciTech Connect

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

  5. Dye-sensitised semiconductors modified with molecular catalysts for light-driven H2 production.

    PubMed

    Willkomm, Janina; Orchard, Katherine L; Reynal, Anna; Pastor, Ernest; Durrant, James R; Reisner, Erwin

    2016-01-07

    The development of synthetic systems for the conversion of solar energy into chemical fuels is a research goal that continues to attract growing interest owing to its potential to provide renewable and storable energy in the form of a 'solar fuel'. Dye-sensitised photocatalysis (DSP) with molecular catalysts is a relatively new approach to convert sunlight into a fuel such as H2 and is based on the self-assembly of a molecular dye and electrocatalyst on a semiconductor nanoparticle. DSP systems combine advantages of both homogenous and heterogeneous photocatalysis, with the molecular components providing an excellent platform for tuning activity and understanding performance at defined catalytic sites, whereas the semiconductor bridge ensures favourable multi-electron transfer kinetics between the dye and the fuel-forming electrocatalyst. In this tutorial review, strategies and challenges for the assembly of functional molecular DSP systems and experimental techniques for their evaluation are explained. Current understanding of the factors governing electron transfer across inorganic-molecular interfaces is described and future directions and challenges for this field are outlined.

  6. Non-equilibrium optical phonon dynamics in bulk and low-dimensional semiconductors

    NASA Astrophysics Data System (ADS)

    Srivastava, G. P.

    2007-02-01

    We present theoretical investigations of the intrinsic dynamics of long-wavelength non-equilibrium optical phonons in bulk and low-dimensional semiconductors. The theory is based on the application of Fermi's golden rule formula, with phonon dispersion relations as well as crystal anharmonicity considered in the framework of isotropic continuum model. Contributions to the decay rates of the phonon modes are discussed in terms of four possible channels: Klemens channel (into two acoustic daughter modes), generalised Ridley channel (into one acoustic and one optical mode), generalised Vallee-Bogani channel (into a lower mode of the same branch and an acoustic mode), and Barman-Srivastava channel (into two lower-branch optical modes). The role of crystal structure and cation/anion mass ratio in determining the lifetime of such modes in bulk semiconductors is highlighted. Estimates of lifetimes of such modes in silicon nanowires and carbon nanotubes will also be presented. The results support and explain available experimental data, and make predictions in some cases.

  7. Spectrophotometric method for optical band gap and electronic transitions determination of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Sangiorgi, Nicola; Aversa, Lucrezia; Tatti, Roberta; Verucchi, Roberto; Sanson, Alessandra

    2017-02-01

    The optical band gap energy and the electronic processes involved are important parameters of a semiconductor material and it is therefore important to determine their correct values. Among the possible methods, the spectrophotometric is one of the most common. Several methods can be applied to determine the optical band gap energy and still now a defined consensus on the most suitable one has not been established. A highly diffused and accurate optical method is based on Tauc relationship, however to apply this equation is necessary to know the nature of the electronic transitions involved commonly related to the coefficient n. For this purpose, a spectrophotometric technique was used and we developed a graphical method for electronic transitions and band gap energy determination for samples in powder form. In particular, the n coefficient of Tauc equation was determined thorough mathematical elaboration of experimental results on TiO2 (anatase), ZnO, and SnO2. The results were used to calculate the band gap energy values and then compared with the information obtained by Ultraviolet Photoelectron Spectroscopy (UPS). This approach provides a quick and accurate method for band gap determination through n coefficient calculation. Moreover, this simple but reliable method can be used to evaluate the nature of electronic transition that occurs in a semiconductor material in powder form.

  8. Nonlinear Optics of Semiconductors Using a Tunable Free-Electron Laser

    NASA Astrophysics Data System (ADS)

    Yang, Xinxing

    1995-01-01

    The short-pulse and ultrahigh intensity characteristics of the Vanderbilt free-electron laser (FEL) make it ideal for studying nonlinear optical properties of small band gap semiconductors. The FEL wavelength range also fortuitously corresponds to the band gaps of many technologically interesting semiconductors. For example, the FEL is a perfect light source for studying multiphoton processes, which can induce multiphoton transitions in measurable amounts. Multiphoton interaction techniques are important in the field of optical spectroscopy since they allow us to probe transition forbidden to single photon processes. This dissertation focuses on measurements using the FEL and other light sources to study Ge, InAs, and GaAs/AlAs asymmetric multiple quantum wells (MQWs). Several techniques were used, which include: photoluminescence, photoluminescence excitation spectroscopy, and Z-scan. The two-photon absorption in bulk Ge in the wavelength region near the two-photon absorption threshold was measured. In addition to its intensity, the FEL's tunability makes it possible optically pump a specific state. This technique also can be used for studying heterojunctions and MQWs. The interband and intersubband transitions of GaAs/AlAs asymmetric MQWs were measured. Another important area of materials research concerns chemical vapor deposited (CVD) diamond. Cathodoluminescence from annealed and unannealed CVD diamond films were measured using a low-energy electron beam. The measurements exhibit a pronounced difference between the luminescence spectra of annealed and unannealed CVD diamond. A significant temperature dependence in the luminescence has been observed.

  9. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    SciTech Connect

    Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  10. ZnCdSe/ZnSe quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Al-Mossawi, Muwaffaq Abdullah

    2017-02-01

    Gain of CdZnSe quantum dot (QD) semiconductor optical amplifiers (SOAs) is studied theoretically using non-Markovian gain model including many-body effects. The calculations are done at three mole fractions. Spontaneous emission and noise figure of the amplifier are studied. The effect of shot noise is included. High gain, polarization independence, and low noise figure are characterize these QD-SOAs. A multi-mode gain appears for Zn0.69Cd0.31Se structure while the structure Zn0.6Cd0.4Se give a low noise.

  11. All-optical depletion of dark excitons from a semiconductor quantum dot

    SciTech Connect

    Schmidgall, E. R.; Schwartz, I.; Cogan, D.; Gershoni, D.; Gantz, L.; Heindel, T.; Reitzenstein, S.

    2015-05-11

    Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.

  12. Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers

    SciTech Connect

    Mezzapesa, F. P. Brambilla, M.; Dabbicco, M.; Scamarcio, G.; Columbo, L. L.; Vitiello, M. S.

    2014-01-27

    To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (≅40 mW/cm{sup 2}) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.

  13. Performance optimization of a free space optical interconnect system with a metal-semiconductor-metal detector

    NASA Astrophysics Data System (ADS)

    Al-Ababneh, Nedal; Khader, Ateka

    2011-08-01

    In this paper we study the possibility and the potentiality of using metal semiconductor-metal photodetector (MSM-PD) in three-dimensional parallel free space optical interconnect (FSOI) systems. The signal-to-noise ratio (SNR) and time response are used as performance measures to optimize the geometry of MSM-PD used in FSOI systems. Both SNR and time response are evaluated, analyzed, and their dependence on feature parameters of the MSM-PD, including finger size, spacing, and number of fingers, are considered. Based on the results obtained, we show that the use of MSM-PD in FSOI improves the interconnect speed at a given acceptable SNR.

  14. Global optimization of semiconductor quantum well profile for maximal optical rectification by variational calculus

    NASA Astrophysics Data System (ADS)

    Radovanovic, Jelena; Milanovic, Vitomir; Ikonic, Zoran; Indjin, Dragan

    2002-07-01

    A procedure is proposed for finding the optimal profile of a semiconductor quantum well to obtain maximal value of the optical rectification coefficient. It relies on the variational calculus, i.e. the optimal control theory, combined with the method of simulated annealing, and should deliver a globally optimized profile, unconstrained to any particular class of functional forms. For the purpose of illustration, the procedure is applied to the optimized design of AlxGa1-xAs based quantum wells, for rectification of ℎω = 116 meV (CO2 laser) radiation. The optimal smooth profile may eventually be discretized to make the structure fabrication easier.

  15. Figures of merit for microwave photonic phase shifters based on semiconductor optical amplifiers.

    PubMed

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2012-05-07

    We theoretically and experimentally compare the performance of two fully tunable phase shifter structures based on semiconductor optical amplifiers (SOA) by means of several figures of merit common to microwave photonic systems. A single SOA stage followed by a tailored notch filter is compared with a cascaded implementation comprising three SOA-based phase shifter stages. Attention is focused on the assessment of the RF net gain, noise figure and nonlinear distortion. Recommendations on the performance optimization of this sort of approaches are detailed.

  16. Reduction of semiconductor laser diode phase and amplitude noise in interferometric fiber optic sensors.

    PubMed

    Newson, T P; Farahi, F; Jones, J D; Jackson, D A

    1989-10-01

    An optical configuration employing two conventional Michelson interferometers and a fiber Fabry-Perot interferometer connected in parallel is used to demonstrate the principle of common mode rejection of both the amplitude and frequency noise of a semiconductor laser. Common mode noise rejection is maximized when the outputs of the two interferometers with matched path imbalance, fringe visibility and amplitude are differentially combined. One interferometer is used as a reference, and the other as a sensing interferometer. The fiber Fabry-Perot interferometer is used as the sensing interferometer and is demonstrated as a miniature acoustic sensing element.

  17. Second-order nonlinear optical susceptibilities of AIIBVI and AIIIBV semiconductors

    NASA Astrophysics Data System (ADS)

    Kumar, V.; Sinha, Anita; Singh, B. P.; Chandra, S.

    2016-10-01

    The second-order nonlinear optical (NLO) susceptibilities χ123(2) of AIIBVI and AIIIBV groups of semiconductors with zincblende (ZB) structure have been studied. Two relations have been proposed for the calculation of χ123(2) (0) at zero frequency. One is based on bond charge model of Levine and the other is based on plasma oscillations theory of solids. Calculated values of χ123(2) (0) for all compounds are in fair agreement with the available experimental and reported values.

  18. Measurements of the nonradiative states of optically illuminated semiconductors by a superconducting tunnel junction

    SciTech Connect

    Iguchi, I.; Kasai, Y.

    1986-08-18

    A novel technique which utilizes a superconducting tunnel junction as a phonon detector is introduced to detect nonequilibrium phonons from the nonradiative states in optically illuminated semiconductors such as Si or GaAs. The method proved to have very high sensitivity for phonon detection with a large S-italic/N-italic ratio. The detected phonon signal as a function of wavelength of the light for GaAs exhibited modulated structures below the band-gap energy consistent with the presence of an EL2 level.

  19. Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices

    NASA Astrophysics Data System (ADS)

    Kelleher, B.; Bonatto, C.; Huyet, G.; Hegarty, S. P.

    2011-02-01

    Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

  20. Excitability in optically injected semiconductor lasers: contrasting quantum-well- and quantum-dot-based devices.

    PubMed

    Kelleher, B; Bonatto, C; Huyet, G; Hegarty, S P

    2011-02-01

    Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

  1. Proposal for the momentum-resolved and time-resolved optical measurement of the current distribution in semiconductors.

    PubMed

    Liu, Jiang-Tao; Su, Fu-Hai; Deng, Xin-Hua; Wang, Hai

    2012-05-21

    The two-color optical coherence absorption spectrum (QUIC-AB) of semiconductors in the presence of a charge current is investigated. We find that the QUIC-AB depends strongly not only on the amplitude of the electron current but also on the direction of the electron current. Thus, the amplitude and the angular distribution of current in semiconductors can be detected directly in real time with the QUIC-AB.

  2. Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

    NASA Astrophysics Data System (ADS)

    Misiewicz, J.; Kudrawiec, R.

    2012-06-01

    The authors present the application of contactless electroreflectance (CER) spectroscopy to study optical transitions in low dimensional semiconductor structures including quantum wells (QWs), step-like QWs, quantum dots (QDs), quantum dashes (QDashes), QDs and QDashes embedded in a QW, and QDashes coupled with a QW. For QWs optical transitions between the ground and excited states as well as optical transitions in QW barriers and step-like barriers have been clearly observed in CER spectra. Energies of these transitions have been compared with theoretical calculations and in this way the band structure has been determined for the investigated QWs. For QD and QDash structures optical transitions in QDs and QDashes as well as optical transitions in the wetting layer have been identified. For QDs and QDashes surrounded by a QW, in addition to energies of QD and QDash transitions, energies of optical transitions in the surrounded QW have been measured and the band structure has been determined for the surrounded QW. Finally some differences, which can be observed in CER and photo-reflectance spectra, have been presented and discussed for selected QW and QD structures.

  3. Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition.

    PubMed

    Ryckman, Judson D; Hallman, Kent A; Marvel, Robert E; Haglund, Richard F; Weiss, Sharon M

    2013-05-06

    Vanadium dioxide (VO(2)) is a promising reconfigurable optical material and has long been a focus of condensed matter research owing to its distinctive semiconductor-to-metal phase transition (SMT), a feature that has stimulated recent development of thermally reconfigurable photonic, plasmonic, and metamaterial structures. Here, we integrate VO(2) onto silicon photonic devices and demonstrate all-optical switching and reconfiguration of ultra-compact broadband Si-VO(2) absorption modulators (L < 1 μm) and ring-resonators (R ~ λ(0)). Optically inducing the SMT in a small, ~0.275 μm(2), active area of polycrystalline VO(2) enables Si-VO(2) structures to achieve record values of absorption modulation, ~4 dB μm(-1), and intracavity phase modulation, ~π/5 rad μm(-1). This in turn yields large, tunable changes to resonant wavelength, |Δλ(SMT)| ~ 3 nm, approximately 60 times larger than Si-only control devices, and enables reconfigurable filtering and optical modulation in excess of 7 dB from modest Q-factor (~10(3)), high-bandwidth ring resonators (>100 GHz). All-optical integrated Si-VO(2) devices thus constitute platforms for reconfigurable photonics, bringing new opportunities to realize dynamic on-chip networks and ultrafast optical shutters and modulators.

  4. A silicon-nanowire memory driven by optical gradient force induced bistability

    SciTech Connect

    Dong, B.; Cai, H. Gu, Y. D.; Kwong, D. L.; Chin, L. K.; Ng, G. I.; Ser, W.; Huang, J. G.; Yang, Z. C.; Liu, A. Q.

    2015-12-28

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

  5. Asynchronous, self-controlled, all-optical label and payload separator using nonlinear polarization rotation in a semiconductor optical amplifier.

    PubMed

    Vegas Olmos, J; Monroy, I; Liu, Y; Garcia Larrode, M; Turkiewicz, J; Dorren, H; Koonen, A

    2004-09-06

    We demonstrate an all-optical label and payload separator based on nonlinear polarization rotation in a semiconductor optical amplifier (SOA). The proposed scheme uses a packet format composed of a label and payload information signal combined with a control signal by using polarization division multiplexing. The control signal is employed to separate the label from the payload signal by exploiting nonlinear polarization rotation in a SOA. Experimental results show a label from payload suppression factor of 22 dB. This scheme operates asynchronously and does not need external control signal. Clean and wide open eye diagrams are obtained for both the payload and the label signal operating at bit-rates of 10 Gbit/s and 625 Mbit/s, respectively.

  6. New time-space-time optical packet switching node based on nonlinear polarization rotation of a semiconductor optical amplifier.

    PubMed

    Yongjun, Wang; Qinghua, Tian; Zhi, Wang; Xiaoqing, Zhu; Chen, Wu; Chao, Shang; Xin, Xiangjun

    2016-03-10

    In this paper, we establish a simple model to analyze the semiconductor optical amplifier's (SOA) nonlinear polarization rotation (NPR) and acquire the variable curves of phase difference between TE and TM modes with bias current, pump power, probe power, and linewidth enhancement factor (LEF). The results indicate that the optical switch based on the SOA's NPR can be realized by changing the pump's optical power and the main operating parameters, such as bias current and hold beam power, and then the pump power can be determined. On this basis, a time-space-time (T-S-T) optical packet switching node is proposed, in which the SOA's NPR switch is the basic element. Then, the T-S and S-T experimental systems are set up, and the experimental results demonstrate that the proposed switch scheme can implement the optical switching function in accordance with the routing requirement. The signal-to-noise ratio (SNR) exceeds 20 dB, and the extinction ratio (ER) is more than 10 dB after being delayed and switched in the node.

  7. Peculiarities of two-photon optical nutation of biexcitons in semiconductors taking into account elastic interparticle interactions

    SciTech Connect

    Khadzhi, P I; Vasiliev, V V

    2010-12-09

    The peculiarities of two-photon nutation in a system of coherent biexcitons in CuCl semiconductors are considered taking into account the elastic biexciton - biexciton interaction. It is shown that depending on the system parameters, optical nutation represents a process of periodic transformation of photon pairs into biexcitons and vice versa. The possibility of exercising the phase control of the optical nutation process is predicted. (nonlinear optical phenomena)

  8. Effective optical Faraday rotations of semiconductor EuS nanocrystals with paramagnetic transition-metal ions.

    PubMed

    Hasegawa, Yasuchika; Maeda, Masashi; Nakanishi, Takayuki; Doi, Yoshihiro; Hinatsu, Yukio; Fujita, Koji; Tanaka, Katsuhisa; Koizumi, Hitoshi; Fushimi, Koji

    2013-02-20

    Novel EuS nanocrystals containing paramagnetic Mn(II), Co(II), or Fe(II) ions have been reported as advanced semiconductor materials with effective optical rotation under a magnetic field, Faraday rotation. EuS nanocrystals with transition-metal ions, EuS:M nanocrystals, were prepared by the reduction of the Eu(III) dithiocarbamate complex tetraphenylphosphonium tetrakis(diethyldithiocarbamate)europium(III) with transition-metal complexes at 300 °C. The EuS:M nanocrystals thus prepared were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), inductively coupled plasma atomic emission spectroanalysis (ICP-AES), and a superconducting quantum interference device (SQUID) magnetometer. Enhanced Faraday rotations of the EuS:M nanocrystals were observed around 550 nm, and their enhanced spin polarization was estimated using electron paramagnetic resonance (EPR) measurements. In this report, the magneto-optical relationship between the Faraday rotation efficiency and spin polarization is discussed.

  9. Leveraging Nanocavity Harmonics for Control of Optical Processes in 2D Semiconductors.

    PubMed

    Akselrod, Gleb M; Ming, Tian; Argyropoulos, Christos; Hoang, Thang B; Lin, Yuxuan; Ling, Xi; Smith, David R; Kong, Jing; Mikkelsen, Maiken H

    2015-05-13

    Optical cavities with multiple tunable resonances have the potential to provide unique electromagnetic environments at two or more distinct wavelengths--critical for control of optical processes such as nonlinear generation, entangled photon generation, or photoluminescence (PL) enhancement. Here, we show a plasmonic nanocavity based on a nanopatch antenna design that has two tunable resonant modes in the visible spectrum separated by 350 nm and with line widths of ∼60 nm. The importance of utilizing two resonances simultaneously is demonstrated by integrating monolayer MoS2, a two-dimensional semiconductor, into the colloidally synthesized nanocavities. We observe a 2000-fold enhancement in the PL intensity of MoS2--which has intrinsically low absorption and small quantum yield--at room temperature, enabled by the combination of tailored absorption enhancement at the first harmonic and PL quantum-yield enhancement at the fundamental resonance.

  10. Fiber Bragg grating dynamic strain sensor using an adaptive reflective semiconductor optical amplifier source.

    PubMed

    Wei, Heming; Tao, Chuanyi; Zhu, Yinian; Krishnaswamy, Sridhar

    2016-04-01

    In this paper, a reflective semiconductor optical amplifier (RSOA) is configured to demodulate dynamic spectral shifts of a fiber Bragg grating (FBG) dynamic strain sensor. The FBG sensor and the RSOA source form an adaptive fiber cavity laser. As the reflective spectrum of the FBG sensor changes due to dynamic strains, the wavelength of the laser output shifts accordingly, which is subsequently converted into a corresponding phase shift and demodulated by an unbalanced Michelson interferometer. Due to the short transition time of the RSOA, the RSOA-FBG cavity can respond to dynamic strains at high frequencies extending to megahertz. A demodulator using a PID controller is used to compensate for low-frequency drifts induced by temperature and large quasi-static strains. As the sensitivity of the demodulator is a function of the optical path difference and the FBG spectral width, optimal parameters to obtain high sensitivity are presented. Multiplexing to demodulate multiple FBG sensors is also discussed.

  11. Nonlinear optical parameters of nonparabolic semiconductor plasmas: Influence of energy dependent effective mass

    SciTech Connect

    Daulatabadkar, Pragya Ghosh, S.

    2015-07-31

    An investigation is carried out in III-V compound semiconductor when a strong transverse magnetic field is applied. By considering the heating effect of carriers, an analytical investigation is made for n-InSb in which the nonlinearity arises due to dependence of effective mass on electronic temperature. At optical frequencies the temperature dependence part of momentum transfer collision frequency is assumed to be negligibly small. The linear and nonlinear parts of optical parameters are evaluated through the first and third order susceptibility of InSb sample. The analysis reveals that the nonlinear part of refractive index increases with intensity which leads to self-focusing of the beam. Thus by adjusting the doping concentration pump frequency and intensity, one may achieve desired nonlinearity in the crystal. Hence n - InSb sample establishes its potentials as candidate material for fabrication of cubic nonlinear devices.

  12. Influences of semiconductor laser on fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer

    NASA Astrophysics Data System (ADS)

    Liang, Sheng; Zhang, Chun-Xi; Lin, Bo; Lin, Wen-Tai; Li, Qin; Zhong, Xiang; Li, Li-Jing

    2010-12-01

    This paper investigates the influences of a semiconductor laser with narrow linewidth on a fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer. It establishes an effective numerical model to describe the noises and linewidth of a semiconductor laser, taking into account their correlations. Simulation shows that frequency noise has great influences on location errors and their relationship is numerically investigated. Accordingly, there is need to determine the linewidth of the laser less than a threshold and obtain the least location errors. Furthermore, experiments are performed by a sensor prototype using three semiconductor lasers with different linewidths, respectively, with polarization maintaining optical fibres and couplers to eliminate the polarization induced noises and fading. The agreement of simulation with experimental results means that the proposed numerical model can make a comprehensive description of the noise behaviour of a semiconductor laser. The conclusion is useful for choosing a laser source for fibre-optic distributed disturbance sensor to achieve optimized location accuracy. What is more, the proposed numerical model can be widely used for analysing influences of semiconductor lasers on other sensing, communication and optical signal processing systems.

  13. Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Khmelinskii, Igor; Makarov, Vladimir I.

    2016-04-01

    We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.

  14. Role of dielectric function in model GW calculations of structural and optical properties in semiconductors

    NASA Astrophysics Data System (ADS)

    Asahi, Ryoji; Freeman, A. J.

    1998-03-01

    Recently proposed nonlocal exchange potential methods such as screened exchange (sX-LDA)(Bylander, Kleinman, Phys. Rev. B 41, 7868 (1990)) and model GW(Gygi, Baldereschi, Phys. Rev. Lett. 62, 2160 (1989)) demonstrated successful extensions of LDA energy bands to treat excited states in semiconductors and insulators. While using different static dielectric functions - a Thomas-Fermi or a Hubbard screening function for the sX-LDA and a step function or an RPA for the model GW - those methods gave surprising agreement of the energy gaps with each other and with experiments. We have investigated semiconductor systems such as Si, Ge, and InSb using the full-potential linearized augmented plane wave (FLAPW) method(Wimmer, Krakauer, Weinert, Freeman, Phys. Rev. B 24, 864 (1981)) within the model GW method including the above dielectric functions. Our focus is on understanding the different results obtained for the structural properties (lattice constants and bulk moduli) and optical properties (band gaps and optical spectra). We find that the results can be interpreted by different long-range screening behavior corresponding to the different static dielectric functions employed in the model GW calculations.

  15. Ultrafast optical studies of surface reaction processes at semiconductor interfaces. Progress report

    SciTech Connect

    Miller, R.J.D.

    1994-10-01

    The DOE funded research has focused on the development of novel non-linear optical methods for the in situ study of surface reaction dynamics. In particular, the work has concentrated on interfacial charge transfer processes as this is the simplest of all surface reactions, i.e., no bonds are broken and the reaction is derived from nuclear repolarization. Interfacial charge transfer forms the basis for a number of important solar energy conversion strategies. In these studies, semiconductor liquid junctions provide a convenient system in which the interfacial charge transfer can be optically initiated. The all-optical approach necessitates that the dynamics of the charge transfer event itself be put in the proper context of the operating photophysical processes at the surface. There are at least four dynamical processes that are coupled in determining the overall rate of electron flux across the interface. In the limit that interfacial charge transfer approaches strong coupling, the time scale for transport of even field accelerated carriers within the space charge region becomes comparable to the charge transfer dynamics. The transport component needs to be convolved to probes of the carrier population at the surface. The other two dynamical processes, carrier thermalization and surface state trapping, determine the states which ultimately serve as the donor levels to the solution acceptor distribution. In terms of the hot carrier model, these latter two processes compete with direct unthermalized charge transfer. There is a fifth dynamical process which also needs consideration: the solvent modes that are coupled to the reaction coordinate. Ultimately, the dynamics of solvent relaxation determine the upper limit to the charge transfer process. Different optical techniques have been developed to follow all the above dynamical processes in which a real time view of charge transfer dynamics at semiconductor surfaces is emerging. These results are discussed here.

  16. Dielectric response of II-VI semiconductor core-shell ensembles: Study of the lossless optical condition

    NASA Astrophysics Data System (ADS)

    de la Cruz, R. M.; Kanyinda-Malu, C.

    2014-09-01

    We theoretically investigate optical properties of II-VI core-shell distribution mixtures made of two type-I sized-nanoshells as a plausible negative dielectric function material. The nonlocal optical response of the semiconductor QD is described by using a resonant excitonic dielectric function, while the shell response is modeled with Demangeot formula. Achieving the zero-loss at an optical frequency ω, i.e., ɛeff =ɛeff‧ + iɛeff″ with ɛeff‧ < 0 and ɛeff″ = 0, is of fundamental importance in nanophotonics. Resonant states in semiconductors provide a source for negative dielectric function provided that the dipole strength and the oscillator density are adequate to offset the background. Furthermore, the semiconductor offers the prospect of pumping, either optically or electrically, to achieve a gain mechanism that can offset the loss. We analyse optimal conditions that must be satisfied to achieve semiconductor-based negative index materials. By comparing with II-VI semiconductor quantum dots (QDs) previously reported in the literature, the inclusion of phonon and shell contributions in the ɛeff along with the finite barrier Effective Mass Approximation (EMA) approach, we found similar qualitative behaviours for the ɛeff. The lossless optical condition along with ɛeff‧ < 0 is discussed in terms of sizes, volume fractions and embedding medium of the mixtures' distributions. Furthermore, we estimated optical power to maintain nanocrystals density in excited states and this value is less than that previously obtained in II-VI semiconductor QDs.

  17. A micromachined thermo-optical light modulator based on semiconductor-to-metal phase transition

    NASA Astrophysics Data System (ADS)

    Jiang, Lijun

    In this research, a micromachined thermo-optical light modulator was realized based on the semiconductor-to-metal phase transition of vanadium dioxide (VO2) thin film. VO2 undergoes a reversible phase transition at approximately 68°C, which is accompanied with drastic changes in its electrical and optical properties. The sharp electrical resistivity change can be as great as five orders. Optically, VO2 film will switch from a transparent semiconductor phase to a reflective metal phase upon the phase transition. The light modulator in this research exploits this phase transition related optical switching by using surface micromachined low-thermal-mass pixels to achieve good thermal isolations, which ensures that each pixel can be individually switched without cross talking. In operation, the pixel temperature was controlled by integrated resistor on each pixel or spatially addressed thermal radiation sources. Active VO2 thin film was synthesized by thermal oxidation of e-beam evaporated vanadium metal film. The oxidized film exhibits a phase transition at ˜65°C with a hysteresis of about 15°C. A transmittance switching from ˜90% to ˜30% in the near infrared and a reflectance switching from ˜50% to ˜15% in the visible have been achieved. The surface microstructure was studied and correlated to its optical properties. A study on the hysteresis loop reveals that the VO2 can be repetitively switched between the "on" and "off" states. The micromachined thermal isolation pixel was a bridge-like silicon dioxide platform suspended with narrow supporting legs. The pixel design was optimized with both thermal and optical simulations. The VO2 light modulator was fabricated by surface micromachining based on dry processing. Silicon dioxide was deposited on a polyimide sacrificial layer by PECVD and patterned to form the structural pixel. Vanadium film was e-beam evaporated and patterned with lift-off process. It was thermally oxidized into VO2 at 390°C. The thermal

  18. Optical implementation of neural learning algorithms based on cross-gain modulation in a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Wang, Zhi; Le, Yansi; Sun, Chonghui; Song, Xiaojia; Wu, Chongqing

    2016-10-01

    Neuromorphic engineering has a wide range of applications in the fields of machine learning, pattern recognition, adaptive control, etc. Photonics, characterized by its high speed, wide bandwidth, low power consumption and massive parallelism, is an ideal way to realize ultrafast spiking neural networks (SNNs). Synaptic plasticity is believed to be critical for learning, memory and development in neural circuits. Experimental results have shown that changes of synapse are highly dependent on the relative timing of pre- and postsynaptic spikes. Synaptic plasticity in which presynaptic spikes preceding postsynaptic spikes results in strengthening, while the opposite timing results in weakening is called antisymmetric spike-timing-dependent plasticity (STDP) learning rule. And synaptic plasticity has the opposite effect under the same conditions is called antisymmetric anti-STDP learning rule. We proposed and experimentally demonstrated an optical implementation of neural learning algorithms, which can achieve both of antisymmetric STDP and anti-STDP learning rule, based on the cross-gain modulation (XGM) within a single semiconductor optical amplifier (SOA). The weight and height of the potentitation and depression window can be controlled by adjusting the injection current of the SOA, to mimic the biological antisymmetric STDP and anti-STDP learning rule more realistically. As the injection current increases, the width of depression and potentitation window decreases and height increases, due to the decreasing of recovery time and increasing of gain under a stronger injection current. Based on the demonstrated optical STDP circuit, ultrafast learning in optical SNNs can be realized.

  19. Dual-pump wave mixing in semiconductor optical amplifiers: performance enhancement with long amplifiers

    NASA Astrophysics Data System (ADS)

    Tomkos, Ioannis; Zacharopoulos, Ioannis; Syvridis, Dimitrios

    1999-05-01

    We demonstrate experimentally the improvement of the performance of the dual pump wave mixing scheme in semiconductor optical amplifiers, using long amplifier chips and high optical pump powers. The optical amplifiers used in the experiment had a ridge waveguide structure with bulk active layer and antireflective-coated angled facets. Measurements of the conversion efficiency and SBR as a function of wavelength shift are presented for a wavelength shift of more than 40 nm. The above measurements are carried out for three amplifier lengths (500 micrometers , 1000 micrometers , and 1500 micrometers ) and for different levels of the optical power of the two pumps. It will be shown that an increase in the amplifier length from 500 micrometers to 1500 micrometers results to an increase of more than 25 dB for the efficiency and more than 20 dB for the SBR. This improvement combined with the inherent advantages of the dual pump scheme (almost constant SBR and high efficiency for large wavelength shifts) results in a highly performing wavelength converter/phase conjugator, suitable for many applications.

  20. Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot

    NASA Astrophysics Data System (ADS)

    Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo

    2016-10-01

    Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.

  1. Ellipsometric and optical study of some uncommon insulator films on 3-5 semiconductors

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Warner, J. D.; Liu, D. C.; Pouch, J. J.

    1985-01-01

    Optical properties of three types of insulating films that show promise in potential applications in the 3-4 semiconductor technology were evaluated, namely a-C:H, BN and CaF2. The plasma deposited a-C:H shows an amorphous behavior with optical energy gaps of approximately 2 to 2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement, and give a fine-tuned positive confirmation to an existing conjecture on the nature of a-C:H films (1). Ion beam deposited BN films show amorphous behavior with energy gap of 5 eV. These films are nonstoichiometric (B/N approximately 2) and have refractive index, density and/or hardness which are dependent on the deposition conditions. The epitaxially grown CaF2 on GaAs films have optical parameters equal to bulk, but evidence of damage was found in the GaAs at the interface.

  2. Improvements to Optical Communication Capabilities Achieved through the Optical Injection of Semiconductor Lasers

    DTIC Science & Technology

    2012-03-22

    3.1.7. High-Speed Photo Detector .....................................................69 3.1.8. Bit Error Ratio Tester and Eye Diagram Analyzer...Cartoon of a directly modulated optical communications system. A description of the pulse modulation scheme can be found in Appendix A...spectrum based on (b) and (c) [24]. .... 21 Figure 2.4. Illustration of the spreading of the optical pulse as a result of material dispersion [24

  3. Optical Real Time Signal Processors and Semiconductor Surface and Semiconductor-Electrolyte Interface Study Using Acoustic Surface Wave.

    DTIC Science & Technology

    1981-08-01

    Resistivity GaAs", J. Appl. Phys., Vol. 50, pp. 4942-4950, 1979. Copies of the papers are available upon request. 2 5. J . Scott Moore and P. Das, "The...Papers presented with support from the contract 1. J . Scott Moore and P. Das, "Hot Electron Effects in Quasi-Two Dimensional Semiconductors

  4. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    PubMed Central

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-01-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades. PMID:26670948

  5. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    DOE PAGES

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; ...

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends onmore » several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.« less

  6. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    SciTech Connect

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  7. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    NASA Astrophysics Data System (ADS)

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  8. N-bits all-optical circular shift register based on semiconductor optical amplifier buffer

    NASA Astrophysics Data System (ADS)

    Lazzeri, Emma; Berrettini, Gianluca; Meloni, Gianluca; Bogoni, Antonella; Potì, Luca

    2011-03-01

    In the perspective of a future all-optical communication network optical shift register will play an important role especially for what concerns several binary functions, such as serial to parallel conversion and cyclic operations, that are involved in techniques allowing error detection and correction as parity check, or cyclic redundancy check. During the last decades, several attempts of realizing circulating memories or shift register in the optical domain were made, with some limits in terms of functionality, number of bit to be stored (under three), scalability or photonic integrability. In this paper, we present a new approach to realize a circulating optical shift register consisting on an SOA-based optical buffer (OB) and a bit selecting circuit (BSC). The OB is potentially integrable and is able to store a finite number of bit at high bit rate. The BSC returns consecutive bits at a lower clock rate, achieving proper shift register function. The bit selection is realized by means of four wave mixing (FWM) in a Kerr medium, and the sequence cancellation is allowed to enable new sequence storing. Experimental validation of the scheme for fB=59MHz and fB=236MHz shows optical signal to noise ratio per bit penalty of 5.6dB at BER=10-9.

  9. Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

    PubMed

    Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E

    2006-03-15

    Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

  10. Quantum kinetic theory of optically injected electrical and spin currents in bulk semiconductors

    NASA Astrophysics Data System (ADS)

    Prepelita, Oleg; Sipe, J. E.

    2002-03-01

    We consider the relaxation of coherently controlled currents and spin currents in bulk semiconductors. The currents are injected by simultaneous irradiation with two laser beams; the magnitude of both currents is controlled by the relative phases of these two fields [1,2]. At low injected carrier densities the relaxation of the currents occurs because of the interaction of carriers with the equilibrium optical phonons. Using a quantum master equation approach, Boltzmann type microscopic equations for the averages of the electron-hole subsystem were obtained. From these microscopic equations a simple system of linear differential equations for the evolution of the macroscopic electrical current and spin current in semiconductors can be obtained and easily solved, thus vastly simplifying the calculation of current and spin current relaxation. The developed theory was applied to bulk GaAs. 1.A. Hache, Y. Kostoulas, J. L. P. Hughes, J. E. Sipe, and H. M. van Driel, Phys. Rev. Lett. 78, 306 (1997). 2.R. D. R. Bhat and J. E. Sipe, Phys. Rev. Lett. 85, 5432 (2000).

  11. Slow and fast light using nonlinear processes in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Pesala, Bala Subrahmanyam

    Ability to control the velocity of light is usually referred to as slow or fast light depending on whether the group velocity of light is reduced or increased. The slowing of light as it passes through the glass to 2/3rd its original value is a well known phenomenon. This slowing down happens due to the interaction of light with the electrons in the medium. As a general principle, stronger the interaction, larger is the reduction in velocity. Recently, a fascinating field has emerged with the objective of not only slowing down the velocity of light but also speeding it up as it goes through the medium by enhancing light-matter interaction. This unprecedented control opens up several exciting applications in various scientific disciplines ranging from nonlinear science, RF photonics to all-optical networks. Initial experiments succeeded in reducing the velocity of light more than a million times to a very impressive 17 m/s. This speed reduction is extremely useful to enhance various nonlinear processes. For RF photonic applications including phased array antennas and tunable filters, control of phase velocity of light is required while control of group velocity serves various functionalities including packet synchronization and contention resolution in an optical buffer. Within the last 10 years, several material systems have been proposed and investigated for this purpose. Schemes based on semiconductor systems for achieving slow and fast light has the advantage of extremely high speed and electrical control. In addition, they are compact, operate at room temperature and can be easily integrated with other optical subsystems. In this work, we propose to use nonlinear processes in semiconductor optical amplifiers (SOAs) for the purpose of controlling the velocity of light. The versatility of the physical processes present in SOAs enables the control of optical signals ranging from 1GHz to larger than 1000 GHz (1 THz). First, we experimentally demonstrate both

  12. Synthesis and nonlinear optical properties of semiconductor nanoparticles within ionomer solutions

    NASA Astrophysics Data System (ADS)

    Jia, Wenling

    For the first time, optical limiting performance of semiconductor nanoparticles was investigated thoroughly against particle size and composition with nanosecond laser pulses at 532 nm as well as picosecond laser pulses in the wavelength range between 680 and 900 nm. Measurement from degenerate four-wave mixing showed the dominance of third-order optical nonlinearity. A combination of optical limiting and DFWM measurements was used to extract the bound electronic nonlinear refraction. CdS(2), core-shell CdS(2)/Ag2S and ternary Cd1-xAgxS nanoparticles were prepared and stabilized within random/block ionomer solutions with a particle diameter range between 2 to 9 nm. UV-visible absorption spectra indicated the shift of absorption edge with respect to bulk materials. Selected area diffraction results showed for the first time that cubic CdS2 formed in solutions at room temperature. The results from the factorial experimental design revealed that---for CdS(2) in random ionomer solutions---the neutralization level and S:Cd ratio are two important factors influencing CdS(2) particle size, while the ionomer concentration and polymer composition are not significant factors. Free-carrier absorption (FCA) and two-photon absorption (TPA) are responsible for the optical limiting performance towards ns and ps pulses respectively. The derived free-carrier absorption cross section of nanoparticle solutions is about 10-18˜10-19 cm 2. The lowest limiting threshold is 0.4 J/cm2. Two-photon absorption coefficients were determined to be tens or a few hundreds cm/GW, which is significantly greater than the reported value for corresponding bulk materials. The determined nonlinear refractive indices are on the order of 10-8 esu, at least 1˜2 orders larger than that of bulk materials. These enhancements are attributed to the quantum confinement which results in different mechanisms of nonlinearity for semiconductor nanoparticles compared to bulk materials. Particles with larger size

  13. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

    SciTech Connect

    Andreeva, E V; Il'chenko, S N; Lobintsov, A A; Shramenko, M V; Ladugin, M A; Marmalyuk, A A; Yakubovich, S D

    2013-11-30

    A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

  14. Modeling of millimeter-wave modulation characteristics of semiconductor lasers under strong optical feedback.

    PubMed

    Bakry, Ahmed

    2014-01-01

    This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated.

  15. Solid-state semiconductor optical cryocooler based on CdS nanobelts.

    PubMed

    Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

    2014-08-13

    We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

  16. Mode tailoring in subwavelength-dimensional semiconductor micro/nanowaveguides by coupling optical microfibers.

    PubMed

    Gu, Fuxing; Cui, Hongbin; Liao, Feng; Lin, Xing; Wang, Haifeng; Zeng, Heping

    2016-10-03

    Benefitted from large fraction of evanescent wave and high endface reflectivity, we have realized mode tailoring in subwavelength-dimensional semiconductor micro/nanowaveguides (MN-WGs) by coupling optical silica microfibers. By investigating the reflection spectra, it was found that the microfiber tips could offer effective reflection and can been used to continuously and reversibly tune the interference wavelengths by changing the contact points with the MN-WGs. The measured extinction ratio in the interference patterns was as high as ~10 dB. In addition, tunable free spectral range of photoluminescence emissions and humidity sensing were also demonstrated. Its advantages of non-destructively tuning, simple fabrication, easy interrogation, and remote monitoring, offer great possible prospects for developing miniature tunable lasers, sensors, and biological endoscopy.

  17. Gain recovery dynamics in semiconductor optical amplifiers with distributed feedback grating under assist light injection

    NASA Astrophysics Data System (ADS)

    Qin, Cui; Zhao, Jing; Yu, Huilong; Zhang, Jian

    2016-07-01

    The gain recovery dynamic characteristics of the semiconductor optical amplifier (SOA) with distributed feedback (DFB) grating are theoretically investigated. The interaction of the grating structure and the assist light is used to accelerate the gain recovery process in the SOA. The effects of the assist light that is injected into the SOA with DFB structure on the gain recovery dynamics, the steady-state carrier density, and field intensity distributions are analyzed, respectively. Results show that the recovery time in the DFB SOA is successfully reduced by injecting relatively high power assist light, whose wavelength is set at the gain region. Finally, under assist light injection, the effects of DFB grating on the gain recovery process are also discussed. It is shown that the gain recovery in the SOA with DFB grating is faster than that in the SOA without DFB grating. In addition, the coupling factor in the DFB grating structure can be optimized to shorten the gain recovery time.

  18. Optical Properties of Planar Nanostructures Based on Semiconductor Quantum Dots and Plasmonic Metal Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bakanov, A. G.; Toropov, N. A.; Vartanyan, T. A.

    2016-03-01

    The optical properties of a composite material consisting of a thin polymer film, which is activated by semiconductor CdSe/ZnS quantum dots (QDs) and silver nanoparticles, on a transparent dielectric substrate have been investigated. It is revealed that the presence of silver nanoparticles leads to an increase in the QD absorption (by a factor of 4) and in the fluorescence intensity (by a factor of 10), whereas the fluorescence time drops by a factor of about 10. Excitation of the composite medium by a pulsed laser is found to result in narrowing of the fluorescence band and a sublinear dependence of its intensity on the pulse energy. In the absence of silver nanoparticles, the fluorescence spectrum of QDs is independent of the excitation-pulse energy density, and the fluorescence intensity depends linearly on the pulse energy in the entire range of energy densities, up to 75 mJ/cm2.

  19. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination.

    PubMed

    Rodrigo, P J; Lim, M; Saloma, C

    2001-02-01

    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (lambda = 830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, lambda/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker.

  20. Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles

    PubMed Central

    Ichimura, Taro; Jin, Takashi; Fujita, Hideaki; Higuchi, Hideo; Watanabe, Tomonobu M.

    2014-01-01

    Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometer scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies. PMID:25120488

  1. Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles.

    PubMed

    Ichimura, Taro; Jin, Takashi; Fujita, Hideaki; Higuchi, Hideo; Watanabe, Tomonobu M

    2014-01-01

    Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometer scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies.

  2. Decoherence in Optically Excited Semiconductors: a perspective from non-equilibrium Green functions

    NASA Astrophysics Data System (ADS)

    Virk, Kuljit Singh

    Decoherence is central to our understanding of the transition from the quantum to the classical world. It is also a way of probing the dynamics of interacting many-body systems. Photoexcited semiconductors are such systems in which the transient dynamics can be studied in considerable detail experimentally. Recent advances in spectroscopy of semiconductors provide powerful tools to explore many-body physics in new regimes. An appropriate theoretical framework is necessary to describe new physical effects now accessible for observation. We present a possible approach in this thesis, and discuss results of its application to an experimentally relevant scenario. The major portion of this thesis is devoted to a formalism for the multi-dimensional Fourier spectroscopy of semiconductors. A perturbative treatment of the electromagnetic field is used to derive a closed set of differential equations for the multi-particle correlation functions, which take into account the many-body effects up to third order in the field. A diagrammatic method is developed, in which we retain all features of the double-sided Feynman diagrams for bookkeeping the excitation scenario, and complement them by allowing for the description of interactions. We apply the formalism to study decoherence between the states of optically excited excitons embedded in an electron gas, and compare it with the decoherence between these states and the ground state. We derive a dynamical equation for the two-time correlation functions of excitons, and compare it with the corresponding equation for the interband polarization. It is argued, and verified by numerical calculation, that the decay of Raman coherence depends sensitively on how differently the superimposed exciton states interact with the electron gas, and that it can be much slower than the decay of interband polarization. We also present a new numerical approach based on the length gauge for modeling the time-dependent laser-semiconductor interaction

  3. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback.

    PubMed

    Lan, Boon Leong; Masoller, Cristina

    2016-01-01

    Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs) of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs) has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation.

  4. Enhanced optical properties of germanate and tellurite glasses containing metal or semiconductor nanoparticles.

    PubMed

    de Araujo, Cid Bartolomeu; Silvério da Silva, Diego; Alves de Assumpção, Thiago Alexandre; Kassab, Luciana Reyes Pires; Mariano da Silva, Davinson

    2013-01-01

    Germanium- and tellurium-based glasses have been largely studied due to their recognized potential for photonics. In this paper, we review our recent studies that include the investigation of the Stokes and anti-Stokes photoluminescence (PL) in different glass systems containing metallic and semiconductor nanoparticles (NPs). In the case of the samples with metallic NPs, the enhanced PL was attributed to the increased local field on the rare-earth ions located in the proximity of the NPs and/or the energy transfer from the metallic NPs to the rare-earth ions. For the glasses containing silicon NPs, the PL enhancement was mainly due to the energy transfer from the NPs to the Er(3+) ions. The nonlinear (NL) optical properties of PbO-GeO2 films containing gold NPs were also investigated. The experiments in the pico- and subpicosecond regimes revealed enhanced values of the NL refractive indices and large NL absorption coefficients in comparison with the films without gold NPs. The reported experiments demonstrate that germanate and tellurite glasses, having appropriate rare-earth ions doping and NPs concentration, are strong candidates for PL-based devices, all-optical switches, and optical limiting.

  5. Optical Control of Semiconductor Quantum Dot Spin Qubits with Microcavity Exciton-Polaritons

    NASA Astrophysics Data System (ADS)

    Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

    2015-03-01

    Topological surface codes demand the least stringent threshold conditions and are most promising for implementing large quantum algorithms. Based on the resource requirements to reach fault tolerance, we develop a hardware platform for large scale quantum computation with semiconductor quantum dot (QD) electron spin qubits. The current proposals for implementation of two-qubit gates and quantum non demolition (QND) readout in a QuDOS (Quantum Dots with Optically Controlled Spins) architecture suffer from large error rates. In our scheme, the optical manipulation of the QD spin qubits is carried out using their Coulomb exchange interaction with optically excited, spin-polarized, laterally confined quantum well (LcQW) exciton-polaritons. The small mass of polaritons protects them from interaction with their solid-state environment (phonons) and enables strong coupling between spin qubits separated by a few microns. Furthermore, the excitation manifold of the QD is well separated from that of the LcQW polaritons, preventing a spin-flip event during readout. We will outline schemes for implementing fast, high-fidelity, single qubit gate, two-qubit geometric phase gate and single-shot QND measurement and analyze important decoherence mechanisms. The work being presented was carried out at Stanford University. Currently the author is at University of Sherbrooke, Canada.

  6. Wide bandwidth chaotic signal generation in a monolithically integrated semiconductor laser via optical injection

    NASA Astrophysics Data System (ADS)

    Yin, Xue-Mei; Zhong, Zhu-Qiang; Zhao, Ling-Juan; Lu, Dan; Qiu, Hai-Ying; Xia, Guang-Qiong; Wu, Zheng-Mao

    2015-11-01

    Wide bandwidth chaotic signal generation in a three-section monolithically integrated semiconductor laser (MISL) under external optical injection is investigated experimentally. Through evaluating the effective bandwidth of chaotic signals, the influences of the optical injection on the bandwidth of chaotic signal from the MISL are analyzed. The experimental results indicate that, for the currents of the DFB section (IDFB) and the phase section (IP) are fixed at 70.00 mA and 34.00 mA, respectively, the effective bandwidth of chaos signal generated by the solitary MISL reaches its maximum value of 14.36 GHz when the current of the amplification section (IA) takes 23.22 mA. After an external optical injection is introduced into the MISL, the effective bandwidth of the generated chaotic signal can be beyond 2.5 times of the maximum value. Furthermore, the effects of the injection strength and the frequency detuning on the effective bandwidth of the generated chaotic signal are also discussed.

  7. Method of implementing frequency encoded multiplexer and demultiplexer systems using nonlinear semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Garai, Sisir Kumar; Mukhopadhyay, Sourangshu

    2009-11-01

    Multiplexing and demultiplexing are the essential parts of any communication network. In case of optical multiplexing and demultiplexing the coding of the data as well as the coding of control signals are most important issues. Many encoding/decoding mechanisms have already been developed in optical communication technology. Recently frequency encoding technique has drawn some special interest to the scientific communities. The advantage of frequency encoding technique over any other techniques is that as the frequency is fundamental character of any signal so it remains unaltered in reflection, refraction, absorption, etc. during transmission of the signal and therefore the system will execute the operation with reliability. On the other hand, the switching speed of semiconductor optical amplifiers (SOA) is sufficiently high with property of best on/off contrast ratio. In our present communication we propose a method of implementing a '4-to-1' multiplexer (MUX) and a '1-to-4' demultiplexer (DEMUX) exploiting the switching character of nonlinear SOA with the use of frequency encoded control signals. To implement the '4-to-1' MUX and '1-to-4' DEMUX system, the frequency selection by multiquantum well (MQW)-grating filter-based SOA has been used for frequency routing purpose. At the same time, the polarization rotation character of SOA has also been exploited to get the desired purpose. Here the fast switching action of SOA with reliable frequency encoded control input signals, it is possible to achieve a faithful MUX/DEMUX service at tera-Hz operational speed.

  8. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback

    PubMed Central

    2016-01-01

    Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs) of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs) has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation. PMID:26901346

  9. Asymmetric MQW semiconductor optical amplifier with low-polarization sensitivity of over 90-nm bandwidth

    NASA Astrophysics Data System (ADS)

    Nkanta, Julie E.; Maldonado-Basilio, Ramón; Abdul-Majid, Sawsan; Zhang, Jessica; Hall, Trevor J.

    2013-12-01

    An exhausted capacity of current Passive Optical Networks has been anticipated as bandwidth-hungry applications such as HDTV and 3D video become available to end-users. To enhance their performance, the next generation optical access networks have been proposed, using optical carriers allocated within the E-band (1360-1460 nm). It is partly motivated by the low-water peak fiber being manufactured by Corning. At these wavelengths, choices for low cost optical amplifiers, with compact size, low energy consumption and feasibility for integration with other optoelectronic components are limited, making the semiconductor optical amplifiers (SOA) a realistic solution. An experimental characterization of a broadband and low polarization sensitive asymmetric multi quantum well (MQW) SOA operating in the E-band is reported. The SOA device is composed of nine 6 nm In1-xGaxAsyP1-y 0.2% tensile strained asymmetric MQW layers sandwiched between nine latticed matched 6 nm InGaAsP barrier layers. The active region is grown on an n-doped InP substrate and buried by p-doped InGaAsP layers. The SOA devices have 7-degrees tilt anti-reflected coated facets, with 2 μm ridge width, and a cavity length of 900 μm. For input powers of -10 dBm and -20 dBm, a maximum gain of 20 dB at 1360 nm with a polarization insensitivity under 3 dB for over 90 nm bandwidth is measured. Polarization sensitivity of less than 0.5 dB is observed for some wavelengths. Obtained results indicate a promising SOA with broadband amplification, polarization insensitivity and high gain. These SOAs were designed and characterized at the Photonics Technology Laboratory, University of Ottawa, Canada.

  10. Magneto-optical studies of magnetic and non-magnetic narrow-gap semiconductors

    NASA Astrophysics Data System (ADS)

    Khodaparast, Giti

    2005-03-01

    In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. Narrow gap semiconductors (NGS) offer many unique features such as small effective masses, high intrinsic mobilities, large effective g- factors, and large spin-orbit coupling effects. This talk will discuss our recent magneto-optical studies on InSb quantum wells (QWs) and InMnAs ferromagnetic heterostructures. In InSb QWs, we observe spin-resolved cyclotron resonance (CR) caused by the non- parabolicity in conduction band and electron spin resonance in symmetric and asymmetric confinement potentials. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with far more spin splitting than expected from the bulk g-factor of InSb. In InMnAs/GaSb we observe light and heavy hole CR peaks which demonstrate the existence of delocalized p-like carriers. In addition, In order to increase our understanding of the dynamics of carriers and spins, we performed time resolved measurements such as time- resolved CR spectroscopy on undoped InSb QWs and time-resolved magneto-optical Kerr effect on InMnAs/GaSb. Our results are important for understanding the electronic and magnetic states in NGS. This work was performed in collaboration with M. B. Santos and R. E. Doezema at the Univ. of Oklahoma, J. Wang and J. Kono at Rice Univ., H. Munekata at Tokyo Institute of Technology, C. J. Stanton at the Univ. of Florida, and Y. H. Matsuda and N. Miura at the Univ. of Tokyo.

  11. Universal Near-Infrared and Mid-Infrared Optical Modulation for Ultrafast Pulse Generation Enabled by Colloidal Plasmonic Semiconductor Nanocrystals.

    PubMed

    Guo, Qiangbing; Yao, Yunhua; Luo, Zhi-Chao; Qin, Zhipeng; Xie, Guoqiang; Liu, Meng; Kang, Jia; Zhang, Shian; Bi, Gang; Liu, Xiaofeng; Qiu, Jianrong

    2016-09-21

    Field effect relies on the nonlinear current-voltage relation in semiconductors; analogously, materials that respond nonlinearly to an optical field can be utilized for optical modulation. For instance, nonlinear optical (NLO) materials bearing a saturable absorption (SA) feature an on-off switching behavior at the critical pumping power, thus enabling ultrafast laser pulse generation with high peak power. SA has been observed in diverse materials preferably in its nanoscale form, including both gaped semiconductor nanostructures and gapless materials like graphene; while the presence of optical bandgap and small carrier density have limited the active spectral range and intensity. We show here that solution-processed plasmonic semiconductor nanocrystals exhibit superbroadband (over 400 THz) SA, meanwhile with large modulation depth (∼7 dB) and ultrafast recovery (∼315 fs). Optical modulators fabricated using these plasmonic nanocrystals enable mode-locking and Q-switching operation across the near-infrared and mid-infrared spectral region, as exemplified here by the pulsed lasers realized at 1.0, 1.5, and 2.8 μm bands with minimal pulse duration down to a few hundreds of femtoseconds. The facile accessibility and superbroadband optical nonlinearity offered by these nonconventional plasmonic nanocrystals may stimulate a growing interest in the exploiting of relevant NLO and photonic applications.

  12. Second-order optical susceptibility in doped III-V piezoelectric semiconductors in the presence of a magnetostatic field

    NASA Astrophysics Data System (ADS)

    Lal, B.; Aghamkar, P.; Kumar, S.; Kashyap, M. K.

    2011-02-01

    A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III-V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of a pump beam with internally generated density and acoustic perturbations. The effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6 μm CO2 laser and efforts are made towards optimising the doping level, applied magnetostatic field and pump intensity to achieve a large value of second-order optical susceptibility and change of its sign. The enhancement in magnitude and change of sign of second-order optical susceptibility, in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field, confirms the chosen nonlinear medium as a potential candidate material for the fabrication of nonlinear optical devices. In particular, at B 0 = 14.1 T, the second-order susceptibility was found to be 3.4 × 10-7 (SI unit) near the resonance condition.

  13. Near-field optically driven Brownian motors (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Wu, Shao-Hua; Huang, Ningfeng; Jaquay, Eric; Povinelli, Michelle L.

    2016-09-01

    Brownian ratchets are of fundamental interest in fields from statistical physics to molecular motors. The realization of Brownian ratchets in engineered systems opens up the potential to harness thermal energy for directed motion, with applications in transport and sorting of nanoparticles. Implementations based on optical traps provide a high degree of tunability along with precise spatiotemporal control. Near-field optical methods provide particular flexibility and ease of on-chip integration with other microfluidic components. Here, we demonstrate the first all-optical, near-field Brownian ratchet. Our approach uses an asymmetrically patterned photonic crystal and yields an ultra-stable trap stiffness of 253.6 pN/nm-W, 100x greater than conventional optical tweezers. By modulating the laser power, optical ratcheting with transport speed of 1 micron/s can be achieved, allowing a variety of dynamical lab-on-a-chip applications. The resulting transport speed matches well with the theoretical prediction.

  14. Nonlinear Optical Studies of the Optical and Electronic Properties of Semiconductor Heterostructures

    DTIC Science & Technology

    1990-05-14

    strained quantum well structures where the heavy and light hole exciton overlap in energy . 0 Use of precision nonlinear optical spectroscopy methods for...Webb, J. Pamulapati, J. Oh, "High Resolution Nonlinear Laser Spectroscopy of Excitons in GaAs Quantum Well Structures," Quantum Electronics and...sulfide- selenide glasses." Appl. J. Quantum Electron .. vol. QE 21, pp. 774-783. 1985. Phvs. B. vol. 38. pp. 31-36. 1985. 1381 N. 1. Zheludev. 1. S

  15. Measuring the Photon Coalescence Time Window in the Continuous-Wave Regime for Resonantly Driven Semiconductor Quantum Dots

    NASA Astrophysics Data System (ADS)

    Proux, Raphaël; Maragkou, Maria; Baudin, Emmanuel; Voisin, Christophe; Roussignol, Philippe; Diederichs, Carole

    2015-02-01

    We revisit Mandel's notion that the degree of coherence equals the degree of indistinguishability by performing Hong-Ou-Mandel- (HOM-)type interferometry with single photons elastically scattered by a cw resonantly driven excitonic transition of an InAs/GaAs epitaxial quantum dot. We present a comprehensive study of the temporal profile of the photon coalescence phenomenon which shows that photon indistinguishability can be tuned by the excitation laser source, in the same way as their coherence time. A new figure of merit, the coalescence time window, is introduced to quantify the delay below which two photons are indistinguishable. This criterion sheds new light on the interpretation of HOM experiments under cw excitation, particularly when photon coherence times are longer than the temporal resolution of the detectors. The photon indistinguishability is extended over unprecedented time scales beyond the detectors' response time, thus opening new perspectives to conducting quantum optics with single photons and conventional detectors.

  16. Wideband wavelength conversion of 16 Gbaud 16-QAM and 5 Gbaud 64-QAM signals in a semiconductor optical amplifier.

    PubMed

    Filion, Benoît; Ng, W C; Nguyen, An T; Rusch, Leslie A; Larochelle, Sophie

    2013-08-26

    We demonstrate wavelength conversion based on four-wave mixing in a semiconductor optical amplifier of signals with quadrature amplitude modulation (QAM). We first demonstrate wavelength conversion of 16 Gbaud 16-QAM signals over the entire C-band using two co-polarized pumps with low power penalty at the forward error correction threshold (FEC) for a wide range of input optical-signal-to-noise-ratio (OSNR). We also demonstrate for the first time wavelength conversion of 5 Gbaud 64-QAM signals in a semiconductor optical amplifier with bit-error rate below the FEC threshold over the entire C-band and investigate the dependence of the power penalty on input OSNR with a single pump configuration.

  17. Arbitrary GRIN component fabrication in optically driven diffusive photopolymers.

    PubMed

    Urness, Adam C; Anderson, Ken; Ye, Chungfang; Wilson, William L; McLeod, Robert R

    2015-01-12

    We introduce a maskless lithography tool and optically-initiated diffusive photopolymer that enable arbitrary two-dimensional gradient index (GRIN) polymer lens profiles. The lithography tool uses a pulse-width modulated deformable mirror device (DMD) to control the 8-bit gray-scale intensity pattern on the material. The custom polymer responds with a self-developing refractive index profile that is non-linear with optical dose. We show that this nonlinear material response can be corrected with pre-compensation of the intensity pattern to yield high fidelity, optically induced index profiles. The process is demonstrated with quadratic, millimeter aperture GRIN lenses, Zernike polynomials and GRIN Fresnel lenses.

  18. Modeling of optically controlled reflective bistability in a vertical cavity semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Mishra, L.

    2015-05-01

    Bistability switching between two optical signals has been studied theoretically utilizing the concept of cross absorption modulation in a vertical cavity semiconductor saturable absorber (VCSSA). The probe beam is fixed at a wavelength other than the low power cavity resonance wavelength, which exhibits bistable characteristic by controlling the power of a pump beam (λpump≠λprobe). The cavity nonlinear effects that arises simultaneously from the excitonic absorption bleaching, and the carrier induced nonlinear index change has been considered in the model. The high power absorption in the active region introduces thermal effects within the nonlinear cavity due to which the effective cavity length changes. This leads to a red-shift of the cavity resonance wavelength, which results a change in phase of the optical fields within the cavity. In the simulation, the phase-change due to this resonance shifting is considered to be constant over time, and it assumes the value corresponding to the maximum input power. Further, an initial phase detuning of the probe beam has been considered to investigate its effect on switching. It is observed from the simulated results that, the output of the probe beam exhibits either clockwise or counter-clockwise bistability, depending on its initial phase detuning.

  19. Characterization of wavelength-swept active mode locking fiber laser based on reflective semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Lee, Hwi Don; Lee, Ju Han; Yung Jeong, Myung; Kim, Chang-Seok

    2011-07-01

    The static and dynamic characteristics of a wavelength-swept active mode locking (AML) fiber laser are presented in both the time-region and wavelength-region. This paper shows experimentally that the linewidth of a laser spectrum and the bandwidth of the sweeping wavelength are dependent directly on the length and dispersion of the fiber cavity as well as the modulation frequency and sweeping rate under the mode-locking condition. To achieve a narrower linewidth, a longer length and higher dispersion of the fiber cavity as well as a higher order mode locking condition are required simultaneously. For a broader bandwidth, a lower order of the mode locking condition is required using a lower modulation frequency. The dynamic sweeping performance is also analyzed experimentally to determine its applicability to optical coherence tomography imaging. It is shown that the maximum sweeping rate can be improved by the increased free spectral range from the shorter length of the fiber cavity. A reflective semiconductor optical amplifier (RSOA) was used to enhance the modulation and dispersion efficiency. Overall a triangular electrical signal can be used instead of the sinusoidal signal to sweep the lasing wavelength at a high sweeping rate due to the lack of mechanical restrictions in the wavelength sweeping mechanism.

  20. Photon-number discrimination using a semiconductor quantum dot, optically gated, field-effect transistor

    NASA Astrophysics Data System (ADS)

    Gansen, Eric J.; Rowe, Mary A.; Greene, Marion B.; Rosenberg, Danna; Harvey, Todd E.; Su, Mark Y.; Nam, Sae Woo; Mirin, Richard P.

    2007-09-01

    We demonstrate photon-number discrimination using a novel semiconductor detector that utilizes a layer of self-assembled InGaAs quantum dots (QDs) as an optically addressable floating gate in a GaAs/AlGaAs δ-doped field-effect transistor. When the QDOGFET (quantum dot, optically gated, field-effect transistor) is illuminated, the internal gate field directs the holes generated in the dedicated absorption layer of the structure to the QDs, where they are trapped. The positively charged holes are confined to the dots and screen the internal gate field, causing a persistent change in the channel current that is proportional to the total number of holes trapped in the QD ensemble. We use highly attenuated laser pulses to characterize the response of the QDOGFET cooled to 4 K. We demonstrate that different photon-number states produce well resolved changes in the channel current, where the responses of the detector reflect the Poisson statistics of the laser light. For a mean photon number of 1.1, we show that decision regions can be defined such that the QDOGFET determines the number (0, 1, 2, or >=3) of detected photons with a probability of accuracy >=83 % in a single-shot measurement.

  1. Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser

    NASA Astrophysics Data System (ADS)

    Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.

    2015-03-01

    The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

  2. The next generation in optical transport semiconductors: IC solutions at the system level

    NASA Astrophysics Data System (ADS)

    Gomatam, Badri N.

    2005-02-01

    In this tutorial overview, we survey some of the challenging problems facing Optical Transport and their solutions using new semiconductor-based technologies. Advances in 0.13um CMOS, SiGe/HBT and InP/HBT IC process technologies and mixed-signal design strategies are the fundamental breakthroughs that have made these solutions possible. In combination with innovative packaging and transponder/transceiver architectures IC approaches have clearly demonstrated enhanced optical link budgets with simultaneously lower (perhaps the lowest to date) cost and manufacturability tradeoffs. This paper will describe: *Electronic Dispersion Compensation broadly viewed as the overcoming of dispersion based limits to OC-192 links and extending link budgets, *Error Control/Coding also known as Forward Error Correction (FEC), *Adaptive Receivers for signal quality monitoring for real-time estimation of Q/OSNR, eye-pattern, signal BER and related temporal statistics (such as jitter). We will discuss the theoretical underpinnings of these receiver and transmitter architectures, provide examples of system performance and conclude with general market trends. These Physical layer IC solutions represent a fundamental new toolbox of options for equipment designers in addressing systems level problems. With unmatched cost and yield/performance tradeoffs, it is expected that IC approaches will provide significant flexibility in turn, for carriers and service providers who must ultimately manage the network and assure acceptable quality of service under stringent cost constraints.

  3. Gain compression effect on the modulation dynamics of an optically injection-locked semiconductor laser using gain lever

    NASA Astrophysics Data System (ADS)

    Sarraute, J.-M.; Schires, K.; LaRochelle, S.; Grillot, F.

    2016-03-01

    The modulation response of an optically-injected gain lever semiconductor laser is studied and calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultra large bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. The impact of the gain compression on the modulation dynamic is discussed for the first time. This work is of prime importance for the development of directly-modulated broadband optical sources for high-speed operation at 40 Gbps and beyond.

  4. Method of developing all-optical trinary JK, D-type, and T-type flip-flops using semiconductor optical amplifiers.

    PubMed

    Garai, Sisir Kumar

    2012-04-10

    To meet the demand of very fast and agile optical networks, the optical processors in a network system should have a very fast execution rate, large information handling, and large information storage capacities. Multivalued logic operations and multistate optical flip-flops are the basic building blocks for such fast running optical computing and data processing systems. In the past two decades, many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitations because of the low switching response of active devices. The frequency encoding technique has been used because of its many advantages. It can preserve its identity throughout data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. The action of polarization-rotation-based very fast switching of semiconductor optical amplifiers increases processing speed. At the same time, tristate optical flip-flops increase information handling capacity.

  5. An effective magnetic field from optically driven phonons

    NASA Astrophysics Data System (ADS)

    Nova, T. F.; Cartella, A.; Cantaluppi, A.; Först, M.; Bossini, D.; Mikhaylovskiy, R. V.; Kimel, A. V.; Merlin, R.; Cavalleri, A.

    2016-10-01

    Light fields at terahertz and mid-infrared frequencies allow for the direct excitation of collective modes in condensed matter, which can be driven to large amplitudes. For example, excitation of the crystal lattice has been shown to stimulate insulator-metal transitions, melt magnetic order or enhance superconductivity. Here, we generalize these ideas and explore the simultaneous excitation of more than one lattice mode, which are driven with controlled relative phases. This nonlinear mode mixing drives rotations as well as displacements of the crystal-field atoms, mimicking the application of a magnetic field and resulting in the excitation of spin precession in the rare-earth orthoferrite ErFeO3. Coherent control of lattice rotations may become applicable to other interesting problems in materials research--for example, as a way to affect the topology of electronic phases.

  6. Micro-Ball-Lens Optical Switch Driven by SMA Actuator

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok

    2003-01-01

    The figure is a simplified cross section of a microscopic optical switch that was partially developed at the time of reporting the information for this article. In a fully developed version, light would be coupled from an input optical fiber to one of two side-by-side output optical fibers. The optical connection between the input and the selected output fiber would be made via a microscopic ball lens. Switching of the optical connection from one output fiber to another would be effected by using a pair of thin-film shape-memory-alloy (SMA) actuators to toggle the lens between two resting switch positions. There are many optical switches some made of macroscopic parts by conventional fabrication techniques and some that are microfabricated and, hence, belong to the class of microelectromechanical systems (MEMS). Conventionally fabricated optical switches tend to be expensive. MEMS switches can be mass-produced at relatively low cost, but their attractiveness has been diminished by the fact that, heretofore, MEMS switches have usually been found to exhibit high insertion losses. The present switch is intended to serve as a prototype of low-loss MEMS switches. In addition, this is the first reported SMA-based optical switch. The optical fibers would be held in V grooves in a silicon frame. The lens would have a diameter of 1 m; it would be held by, and positioned between, the SMA actuators, which would be made of thin films of TiNi alloy. Although the SMA actuators are depicted here as having simple shapes for the sake of clarity of illustration, the real actuators would have complex, partly net-like shapes. With the exception of the lens and the optical fibers, the SMA actuators and other components of the switch would be made by microfabrication techniques. The components would be assembled into a sandwich structure to complete the fabrication of the switch. To effect switching, an electric current would be passed through one of the SMA actuators to heat it above

  7. Renormalization of optical transition strengths in semiconductor nanoparticles due to band mixing

    DOE PAGES

    Velizhanin, Kirill A.

    2016-05-25

    We report that unique optical properties of semiconductor nanoparticles (SN) make them very promising in the multitude of applications including lasing, light emission and photovoltaics. In many of these applications it is imperative to understand the physics of interaction of electrons in a SN with external electromagnetic fields on the quantitative level. In particular, the strength of electron–photon coupling determines such important SN parameters as the radiative lifetime and absorption cross section. This strength is often assumed to be fully encoded by the so called Kane momentum matrix element. This parameter, however, pertains to a bulk semiconductor material and, asmore » such, is not sensitive to the quantum confinement effects in SNs. In this work we demonstrate that the quantum confinement, via the so called band mixing, can result in a significant suppression of the strength of electron interaction with electromagnetic field. Within the envelope function formalism we show how this suppression can be described by introducing an effective energy-dependent Kane momentum. Then, the effect of band mixing on the efficiencies of various photoinduced processes can be fully captured by the conventional formulae (e.g., spontaneous emission rate), once the conventional Kane momentum is substituted with the renormalized energy-dependent Kane momentum introduced in here. Lastly, as an example, we evaluate the energy-dependent Kane momentum for spherical PbSe and PbS SNs (i.e., quantum dots) and show that neglecting band mixing in these systems can result in the overestimation of absorption cross sections and emission rates by a factor of ~2.« less

  8. Renormalization of optical transition strengths in semiconductor nanoparticles due to band mixing

    SciTech Connect

    Velizhanin, Kirill A.

    2016-05-25

    We report that unique optical properties of semiconductor nanoparticles (SN) make them very promising in the multitude of applications including lasing, light emission and photovoltaics. In many of these applications it is imperative to understand the physics of interaction of electrons in a SN with external electromagnetic fields on the quantitative level. In particular, the strength of electron–photon coupling determines such important SN parameters as the radiative lifetime and absorption cross section. This strength is often assumed to be fully encoded by the so called Kane momentum matrix element. This parameter, however, pertains to a bulk semiconductor material and, as such, is not sensitive to the quantum confinement effects in SNs. In this work we demonstrate that the quantum confinement, via the so called band mixing, can result in a significant suppression of the strength of electron interaction with electromagnetic field. Within the envelope function formalism we show how this suppression can be described by introducing an effective energy-dependent Kane momentum. Then, the effect of band mixing on the efficiencies of various photoinduced processes can be fully captured by the conventional formulae (e.g., spontaneous emission rate), once the conventional Kane momentum is substituted with the renormalized energy-dependent Kane momentum introduced in here. Lastly, as an example, we evaluate the energy-dependent Kane momentum for spherical PbSe and PbS SNs (i.e., quantum dots) and show that neglecting band mixing in these systems can result in the overestimation of absorption cross sections and emission rates by a factor of ~2.

  9. Renormalization of optical transition strengths in semiconductor nanoparticles due to band mixing

    NASA Astrophysics Data System (ADS)

    Velizhanin, Kirill A.

    2016-12-01

    Unique optical properties of semiconductor nanoparticles (SN) make them very promising in the multitude of applications including lasing, light emission and photovoltaics. In many of these applications it is imperative to understand the physics of interaction of electrons in a SN with external electromagnetic fields on the quantitative level. In particular, the strength of electron-photon coupling determines such important SN parameters as the radiative lifetime and absorption cross section. This strength is often assumed to be fully encoded by the so called Kane momentum matrix element. This parameter, however, pertains to a bulk semiconductor material and, as such, is not sensitive to the quantum confinement effects in SNs. In this work we demonstrate that the quantum confinement, via the so called band mixing, can result in a significant suppression of the strength of electron interaction with electromagnetic field. Within the envelope function formalism we show how this suppression can be described by introducing an effective energy-dependent Kane momentum. Then, the effect of band mixing on the efficiencies of various photoinduced processes can be fully captured by the conventional formulae (e.g., spontaneous emission rate), once the conventional Kane momentum is substituted with the renormalized energy-dependent Kane momentum introduced in here. As an example, we evaluate the energy-dependent Kane momentum for spherical PbSe and PbS SNs (i.e., quantum dots) and show that neglecting band mixing in these systems can result in the overestimation of absorption cross sections and emission rates by a factor of ∼ 2.

  10. Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

    SciTech Connect

    Gehl, Michael; Gibson, Ricky; Zandbergen, Sander; Keiffer, Patrick; Sears, Jasmine; Khitrova, Galina

    2016-02-01

    Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors, with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.

  11. Specific property analysis of thin-film semiconductors for effective optical logical operations

    NASA Astrophysics Data System (ADS)

    Liyanage, Chinthaka

    In this thesis, a straightforward laser modulation concept is discussed which has the potential to be employed in similar ways as microelectromechanical systems (MEMS) in optical switching. The concept is realized by crossing two laser lines in a semiconducting thin-film on a glass or flexible polymer substrate, i.e., by switching one of the beams, one achieves a clearly resolved (up to 30%) modulation of the other beam. In case of thin-film GaAs, response times in the picosecond range are possible, whereas ZnTe and CdS exhibits relatively slow but more resolved modulation. Both the transmission and reflection modes of the modulation under different conditions such as various intensities and laser energies were investigated. The experiments were carried out in steady state with continuous wave lasers and time resolved mode with short laser pulses in the order of nanoseconds. Furthermore, electro-optic hybridization possibilities of the modulation concept were also investigated, utilizing thin-film semiconductor as an active optical element. All the experiments have been carried out at ambient conditions with moderate laser powers on the order of 10 mW. Additional experiments were carried out with the intention to relate the concept to photo induced reversible macroscopic property changes in the material such as reflection coefficient and refractive index variations. Reflection spectra of the materials were measured with and without the influence of additional laser illumination. A clear reflectance change was observed in all of the material with a pronounced difference near its band gap.

  12. Fluorosilicene/chlorosilicene bilayer semiconductor with tunable electronic and optical properties

    NASA Astrophysics Data System (ADS)

    Yang, Q.; Zhang, S. L.; Chen, X. P.; Cai, M.; Tan, C. J.

    2017-02-01

    Using comprehensive density functional theory calculations, the structural, electronic, and optical properties of novel fluorosilicene/chlorosilicene (F-silicene/Cl-silicene) heterobilayer are investigated. Our results unveil that the presence of hetero-halogen bonding (Si-F...Cl-Si) has a remarkable influence on the F-silicene/Cl-silicene bilayer. The F-silicene/Cl-silicene heterostructure in the most stable pattern has a moderate band gap of 0.309 eV, lower than that of isolated halogenated silicene. Encouragingly, F-silicene/Cl-silicene heterobilayers all have a direct band gap nature, irrespective of the stacking pattern, thickness and external electric fields (E-fields), which is an advantage over MoS2 layers. In addition, applying appropriate E-field leads to a significant enhancement of binding strength of the F-silicene/Cl-silicene heterobilayer. Especially, the band gap of the F-silicene/Cl-silicene heterobilayer can be effectively modulated by E-fields, even a semiconductor-metal transition occurs. Moreover, the interfacial hetero-halogen interaction changes the optical properties of isolated halogenated silicene; the adsorption edge of imaginary part of the dielectric function displays a corresponding redshift in comparison with that of isolated halogenated silicene, which makes the F-silicene/Cl-silicene heterostructure active over the visible range. The complete electron-hole separation also enhances the photocatalytic efficiency of the F-silicene/Cl-silicene heterobilayer. Overall, the moderate band gap, effective band gap modification by external E-field, robust direct band gap nature, suitable band edge positions, and type-II band alignment enable the F-silicene/Cl-silicene heterobilayer to have great potential applications in the field of optical and nanoelectronic devices.

  13. A multipurpose scanning near-field optical microscope: Reflectivity and photocurrent on semiconductor and biological samples

    NASA Astrophysics Data System (ADS)

    Cricenti, A.; Generosi, R.; Barchesi, C.; Luce, M.; Rinaldi, M.

    1998-09-01

    A multipurpose scanning near field optical microscope (SNOM) operating at ambient pressure is described with the aim of characterizing the inner parts of biological molecules and any semiconductor or metal microstructure. Therefore, in addition to the requirements of reliability and mechanical stability we have carefully considered analyzing a sample with all available geometries for input/output of photons, in order to get as much information as possible. The SNOM unit consists of two separable cylindrical supports; the lower one contains the sample holder mounted on top of a piezoelectric scanner which is contained in a motor controlled x-y-z stage. A piezo-modulated stretched optical fiber with a few tens of nanometer pinhole and a shear-force apparatus mounted inside the top cylinder allow for topography measurements. The reflectivity of the sample can be measured by applying different methods: the sample can be illuminated on top by an external source, as well as by the optical fiber used for the detection of the reflectivity signal. An aperture in the lower cylinder allows for illumination of the sample on the back: in this case the fiber collects the evanescent wave induced at the top of the sample. Another aperture in the lower cylinder allows measurement of the reflected light which includes a contribution due to the interaction with the fiber. Also photocurrent experiments can be easily performed by illuminating the sample with the fiber and detecting the transmitted signal using a current-voltage converter mounted inside the top cylinder. A video-camera that can reach 170 enlargements is mounted on the top cylinder for positioning the fiber on particular regions of the sample. Reflectivity and photocurrent measurements have been performed on uncoated neurons, CsI compound, Au/GaAs, and PtSi/Si systems, reaching a resolution well below the diffraction limit.

  14. Optical response in a laser-driven quantum pseudodot system

    NASA Astrophysics Data System (ADS)

    Kilic, D. Gul; Sakiroglu, S.; Ungan, F.; Yesilgul, U.; Kasapoglu, E.; Sari, H.; Sokmen, I.

    2017-03-01

    We investigate theoretically the intense laser-induced optical absorption coefficients and refractive index changes in a two-dimensional quantum pseudodot system under an uniform magnetic field. The effects of non-resonant, monochromatic intense laser field upon the system are treated within the framework of high-frequency Floquet approach in which the system is supposed to be governed by a laser-dressed potential. Linear and nonlinear absorption coefficients and relative changes in the refractive index are obtained by means of the compact-density matrix approach and iterative method. The results of numerical calculations for a typical GaAs quantum dot reveal that the optical response depends strongly on the magnitude of external magnetic field and characteristic parameters of the confinement potential. Moreover, we have demonstrated that the intense laser field modifies the confinement and thereby causes remarkable changes in the linear and nonlinear optical properties of the system.

  15. Fabrication 3D buried channel optical waveguide modulators on field-driven ion exchange process

    NASA Astrophysics Data System (ADS)

    Zhou, Zigang; Chen, Wenqiang; Zhu, Li; Li, Jing; Luo, Xiaoying

    2010-10-01

    A high electric field technique was developed to fabricate buried optical waveguide modulator on K9 optical glass. The 80V voltage was applied on the glass to accelerate the field-driven ion exchange process by expeditiously replacing host sodium ions in the glass with silver ions. As a result, the optical loss for optical waveguide modulator was measured using the edge coupling technique with a 0.6328μm He-Ne laser. Loss of 0.20 dB/cm was obtained for channel waveguides of 25μm in depth, relatively low for waveguides of such depth at red wavelength.

  16. Microgravity-Driven Optic Nerve/Sheath Biomechanics Simulations

    NASA Technical Reports Server (NTRS)

    Ethier, C. R.; Feola, A.; Myers, J. G.; Nelson, E.; Raykin, J.; Samuels, B.

    2016-01-01

    Visual Impairment and Intracranial Pressure (VIIP) syndrome is a concern for long-duration space flight. Current thinking suggests that the ocular changes observed in VIIP syndrome are related to cephalad fluid shifts resulting in altered fluid pressures [1]. In particular, we hypothesize that increased intracranial pressure (ICP) drives connective tissue remodeling of the posterior eye and optic nerve sheath (ONS). We describe here finite element (FE) modeling designed to understand how altered pressures, particularly altered ICP, affect the tissues of the posterior eye and optic nerve sheath (ONS) in VIIP. METHODS: Additional description of the modeling methodology is provided in the companion IWS abstract by Feola et al. In brief, a geometric model of the posterior eye and optic nerve, including the ONS, was created and the effects of fluid pressures on tissue deformations were simulated. We considered three ICP scenarios: an elevated ICP assumed to occur in chronic microgravity, and ICP in the upright and supine positions on earth. Within each scenario we used Latin hypercube sampling (LHS) to consider a range of ICPs, ONH tissue mechanical properties, intraocular pressures (IOPs) and mean arterial pressures (MAPs). The outcome measures were biomechanical strains in the lamina cribrosa, optic nerve and retina; here we focus on peak values of these strains, since elevated strain alters cell phenotype and induce tissue remodeling. In 3D, the strain field can be decomposed into three orthogonal components, denoted as first, second and third principal strains. RESULTS AND CONCLUSIONS: For baseline material properties, increasing ICP from 0 to 20 mmHg significantly changed strains within the posterior eye and ONS (Fig. 1), indicating that elevated ICP affects ocular tissue biomechanics. Notably, strains in the lamina cribrosa and retina became less extreme as ICP increased; however, within the optic nerve, the occurrence of such extreme strains greatly increased as

  17. Laser beam shaping optical system design methods and their application in edge-emitting semiconductor laser-based LIDAR systems

    NASA Astrophysics Data System (ADS)

    Serkan, Mert

    LIDAR (Light Detection And Ranging) systems are employed for numerous applications such as remote sensing, military applications, optical data storage, display technology, and material processing. Furthermore, they are superior to other active remote sensing tools such as RADAR systems, considering their higher accuracy and more precise resolution due to their much shorter wavelengths and narrower beamwidth. Several types of lasers can be utilized as the radiation source of several LIDAR systems. Semiconductor laser-based LIDAR systems have several advantages such as low cost, compactness, broad range of wavelengths, and high PRFs (Pulse Repetition Frequency). However, semiconductor lasers have different origins and angles of divergence in the two transverse directions, resulting in the inherent astigmatism and elliptical beam shape. Specifically, elliptical beam shape is not desirable for several laser-based applications including LIDAR systems specifically designed to operate in the far-field region. In this dissertation, two mirror-based and two lens-based beam shapers are designed to circularize, collimate, and expand an edge-emitting semiconductor laser beam to a desired beam diameter for possible application in LIDAR systems. Additionally, most laser beams including semiconductor laser beams have Gaussian irradiance distribution. For applications that require uniform illumination of an extended target area, Gaussian irradiance distribution is undesirable. Therefore, a specific beam shaper is designed to transform the irradiance distribution from Gaussian to uniform in addition to circularizing, collimating, and expanding the semiconductor laser beam. For the design of beam shapers, aperture sizes of the surfaces are preset for desired power transmission and allowed diffraction level, surface parameters of the optical components and the distances between these surfaces are determined. Design equations specific to these beam shaping optical systems are

  18. Development of new generation of perovskite based noble metal/semiconductor photocatalysts for visible-light-driven hydrogen production

    NASA Astrophysics Data System (ADS)

    Shen, Peichuan

    In recent decades, semiconductor photocatalysis has attracted a growing attention as a possible alternative to existing methods of hydrogen production, hydrocarbon conversion and organic compound oxidation. Many types of photocatalysts have been developed and tested for photocatalytic applications. However, most of them do not have notable activity in visible light region, which limits their practical applications. Development of photocatalysts, which can be activated by visible light provides a promising way forward to utilize both UV and visible portions of solar spectrum. In this thesis, two main methods to advance visible light driven photocatalysis, such as bandgap modification through doping and co-catalyst development, are investigated. The photocatalysts studied in this thesis included CdS and SrTiO3, which were extensively investigated and characterized. Rhodium doped strontium titanate was synthesized through different preparation methods. The synthesized samples have been investigated by various characterization techniques including XRD, TEM, STEM, XPS and UV-Vis spectroscopy. The effect of preparation conditions, such as doping concentration, calcination temperature and pH have been investigated and optimized. In addition, the photocatalytic activities for hydrogen production of the samples synthesized by different preparation methods were also studied. Among the preparation methods, polymerizable complex (PC) method was found to be the most effective synthesis method for SrTiO3: Rh. The samples prepared by PC method had higher photocatalytic activity as compared to that of samples synthesized by solid state reaction method and hydrothermal method. The reasons might be attributed to more effective doping and higher surface area. The results of this work suggest that PC method can also be applied to develop other perovskite materials for photocatalytic applications. Co-catalyst development for enhancement of photocatalytic hydrogen production is also

  19. Optical field emission from resonant gold nanorods driven by femtosecond mid-infrared pulses

    SciTech Connect

    Kusa, F.; Echternkamp, K. E.; Herink, G.; Ropers, C.; Ashihara, S.

    2015-07-15

    We demonstrate strong-field photoelectron emission from gold nanorods driven by femtosecond mid-infrared optical pulses. The maximum photoelectron yield is reached at the localized surface plasmon resonance, indicating that the photoemission is governed by the resonantly-enhanced optical near-field. The wavelength- and field-dependent photoemission yield allows for a noninvasive determination of local field enhancements, and we obtain intensity enhancement factors close to 1300, in good agreement with finite-difference time domain computations.

  20. Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

    NASA Technical Reports Server (NTRS)

    Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

    1996-01-01

    Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

  1. Optically Driven Spin Based Quantum Dots for Quantum Computing

    DTIC Science & Technology

    2008-01-01

    system approach to quantum optics, Lecture Notes in Physics (Springer, Berlin, 1993). [5] H. M. Wiseman and G. J. Milburn, Phys. Rev. Lett. 70, 548 (1993...Electrical Engineering and Computer Science Department of Physics Harrison M. Randall Laboratory of Physics The University of Michigan Ann Arbor, MI...48109 Phone: 734-764-4469 Email: dst@umich.edu Co-Principal Investigator: L.J. Sham Department of Physics The University of California – San

  2. Driven optical lattices as strong-field simulators

    SciTech Connect

    Arlinghaus, Stephan; Holthaus, Martin

    2010-06-15

    We argue that ultracold atoms in strongly shaken optical lattices can be subjected to conditions similar to those experienced by electrons in laser-irradiated crystalline solids, but without introducing secondary polarization effects. As a consequence, one can induce nonperturbative multiphoton-like resonances due to the mutual penetration of ac-Stark-shifted Bloch bands. These phenomena can be detected with a combination of currently available laboratory techniques.

  3. Effect of random potential on the optical properties of the CdS x Se1 - x semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sedrakyan, D. M.; Petrosyan, P. G.; Grigoryan, L. N.

    2015-05-01

    CdS x Se1 - x semiconductor crystals in silicate glass with different degrees of perfection of crystal-line lattice are fabricated. The spectral features of the optical transmittance and photoluminescence at the initial stage of the heat treatment cannot be interpreted using only the diffusion growth of nanocrystals. Structural defects of nanocrystals must be taken into account at the initial stage of the crystal growth.

  4. Wideband dynamic behavioral modeling of reflective semiconductor optical amplifiers using a tapped-delay multilayer perceptron.

    PubMed

    Liu, Zhansheng; Violas, Manuel Alberto; Carvalho, Nuno Borges

    2013-02-11

    In this paper, we propose a wideband dynamic behavioral model for a bulk reflective semiconductor optical amplifier (RSOA) used as a modulator in colorless radio over fiber (RoF) systems using a tapped-delay multilayer perceptron (TDMLP). 64 quadrature amplitude modulation (QAM) signals with 20 Msymbol/s were used to train, validate and test the model. Nonlinear distortion and dynamic effects induced by the RSOA modulator are demonstrated. The parameters of the model such as the number of nodes in the hidden layer and memory depth were optimized to ensure the generality and accuracy. The normalized mean square error (NMSE) is used as a figure of merit. The NMSE was up to -44.33 dB when the number of nodes in the hidden layer and memory depth were set to 20 and 3, respectively. The TDMLP model can accurately approximate to the dynamic characteristics of the RSOA modulator. The dynamic AM-AM and dynamic AM-PM distortions of the RSOA modulator are drawn. The results show that the single hidden layer TDMLP can provide accurate approximation for behaviors of the RSOA modulator.

  5. Theoretical simulation of carrier capture and relaxation rates in quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Wu, Yunhu; Zhang, Guoping; Guo, Ling; Qi, Guoqun; Li, Xiaoming

    2014-06-14

    Based on Auger scattering mechanism, carrier-carrier scattering dynamics between the two-dimensional carrier reservoir (also called wetting layer, i.e., WL) and the confined quantum dot ground and first excited state in quantum-dot semiconductor optical amplifiers (QD-SOAs) are investigated theoretically in this paper. The scattering rates for independent electron and hole densities are calculated. The results show an ultra-fast carrier capture (relaxation) rate up to 1 ps{sup −1}, and there is a complex dependence of the Coulomb scattering rates on the WL electron and hole densities. In addition, due to the different effective mass and the level distribution, the scattering rates for electron and hole are very different. Finally, in order to provide a direction to control (increase or decrease) the input current in realistic QD-SOA systems, a simple method is proposed to determine the trends of the carrier recovery rates with the WL carrier densities in the vicinity of the steady-state.

  6. Multiphysics modeling of non-linear laser-matter interactions for optically active semiconductors

    NASA Astrophysics Data System (ADS)

    Kraczek, Brent; Kanp, Jaroslaw

    Development of photonic devices for sensors and communications devices has been significantly enhanced by computational modeling. We present a new computational method for modelling laser propagation in optically-active semiconductors within the paraxial wave approximation (PWA). Light propagation is modeled using the Streamline-upwind/Petrov-Galerkin finite element method (FEM). Material response enters through the non-linear polarization, which serves as the right-hand side of the FEM calculation. Maxwell's equations for classical light propagation within the PWA can be written solely in terms of the electric field, producing a wave equation that is a form of the advection-diffusion-reaction equations (ADREs). This allows adaptation of the computational machinery developed for solving ADREs in fluid dynamics to light-propagation modeling. The non-linear polarization is incorporated using a flexible framework to enable the use of multiple methods for carrier-carrier interactions (e.g. relaxation-time-based or Monte Carlo) to enter through the non-linear polarization, as appropriate to the material type. We demonstrate using a simple carrier-carrier model approximating the response of GaN. Supported by ARL Materials Enterprise.

  7. High Photoluminescence Efficiency and Optically Pumped Lasing in Solution-Processed Mixed Halide Perovskite Semiconductors.

    PubMed

    Deschler, Felix; Price, Michael; Pathak, Sandeep; Klintberg, Lina E; Jarausch, David-Dominik; Higler, Ruben; Hüttner, Sven; Leijtens, Tomas; Stranks, Samuel D; Snaith, Henry J; Atatüre, Mete; Phillips, Richard T; Friend, Richard H

    2014-04-17

    The study of the photophysical properties of organic-metallic lead halide perovskites, which demonstrate excellent photovoltaic performance in devices with electron- and hole-accepting layers, helps to understand their charge photogeneration and recombination mechanism and unravels their potential for other optoelectronic applications. We report surprisingly high photoluminescence (PL) quantum efficiencies, up to 70%, in these solution-processed crystalline films. We find that photoexcitation in the pristine CH3NH3PbI3-xClx perovskite results in free charge carrier formation within 1 ps and that these free charge carriers undergo bimolecular recombination on time scales of 10s to 100s of ns. To exemplify the high luminescence yield of the CH3NH3PbI3-xClx perovskite, we construct and demonstrate the operation of an optically pumped vertical cavity laser comprising a layer of perovskite between a dielectric mirror and evaporated gold top mirrors. These long carrier lifetimes together with exceptionally high luminescence yield are unprecedented in such simply prepared inorganic semiconductors, and we note that these properties are ideally suited for photovoltaic diode operation.

  8. Self-Consistent Hybrid Functional Calculations: Implications for Structural, Electronic, and Optical Properties of Oxide Semiconductors

    NASA Astrophysics Data System (ADS)

    Fritsch, Daniel; Morgan, Benjamin J.; Walsh, Aron

    2017-01-01

    The development of new exchange-correlation functionals within density functional theory means that increasingly accurate information is accessible at moderate computational cost. Recently, a newly developed self-consistent hybrid functional has been proposed (Skone et al., Phys. Rev. B 89:195112, 2014), which allows for a reliable and accurate calculation of material properties using a fully ab initio procedure. Here, we apply this new functional to wurtzite ZnO, rutile SnO2, and rocksalt MgO. We present calculated structural, electronic, and optical properties, which we compare to results obtained with the PBE and PBE0 functionals. For all semiconductors considered here, the self-consistent hybrid approach gives improved agreement with experimental structural data relative to the PBE0 hybrid functional for a moderate increase in computational cost, while avoiding the empiricism common to conventional hybrid functionals. The electronic properties are improved for ZnO and MgO, whereas for SnO2 the PBE0 hybrid functional gives the best agreement with experimental data.

  9. High-speed pulse train amplification in semiconductor optical amplifiers with optimized bias current.

    PubMed

    Xia, Mingjun; Ghafouri-Shiraz, H; Hou, Lianping; Kelly, Anthony E

    2017-02-01

    In this paper, we have experimentally investigated the optimized bias current of semiconductor optical amplifiers (SOAs) to achieve high-speed input pulse train amplification with high gain and low distortion. Variations of the amplified output pulse duration with the amplifier bias currents have been analyzed and, compared to the input pulse duration, the amplified output pulse duration is broadened. As the SOA bias current decreases from the high level (larger than the saturated bias current) to the low level, the broadened pulse duration of the amplified output pulse initially decreases slowly and then rapidly. Based on the analysis, an optimized bias current of SOA for high-speed pulse train amplification is introduced. The relation between the SOA optimized bias current and the parameters of the input pulse train (pulse duration, power, and repetition rate) are experimentally studied. It is found that the larger the input pulse duration, the lower the input pulse power or a higher repetition rate can lead to a larger SOA optimized bias current, which corresponds to a larger optimized SOA gain. The effects of assist light injection and different amplifier temperatures on the SOA optimized bias current are studied and it is found that assist light injection can effectively increase the SOA optimized bias current while SOA has a lower optimized bias current at the temperature 20°C than that at other temperatures.

  10. Electrically and optically detected spin echo of hopping carriers in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Mkhitaryan, Vagharsh; Dobrovitski, Viatcheslav

    We develop a theory for electrically and optically detected primary (2-pulse) and stimulated (3-pulse) spin echo produced by the polaron pairs coupled to the nuclear spins in organic semiconductors. The theory employs fully quantum description of the nuclear and polaron spins, and explains how the structure of the echo signal (electron spin echo envelope modulation, ESEEM) depends on the statistics and rate of the polaron hopping. For the primary spin echo the envelope modulation is strong for slow hopping; both modulation amplitude and dephasing time T2 decrease with increasing hopping rate. As the hopping rate increases further, T2 starts to increase again due to motional narrowing, while the primary echo signal becomes exponential without modulation. The stimulated spin echo signal also shows strong envelope modulation for slow polaron hopping. For faster hopping the stimulated echo (unlike the primary echo) shows a modulation which does not disappear for fast hopping, and has the frequency of the nuclear Larmor precession. Besides describing the recent spin echo measurements in π-conjugated polymers, our work provides a way to directly determine the polaron hopping dynamics from the spin echo experiments. This work was supported by the Department of Energy-Basic Energy Sciences under Contract No. DE-AC02-07CH11358.

  11. Resolved-sideband Raman cooling of an optical phonon in semiconductor materials

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Zhang, Qing; Wang, Xingzhi; Kwek, Leong Chuan; Xiong, Qihua

    2016-09-01

    The radiation pressure of light has been widely used to cool trapped atoms or the mechanical vibrational modes of optomechanical systems. Recently, by using the electrostrictive forces of light, spontaneous Brillouin cooling and stimulated Brillouin excitation of acoustic modes of the whispering-gallery-type resonator have been demonstrated. The laser cooling of specific lattice vibrations in solids (that is, phonons) proposed by Dykman in the late 1970s, however, still remains sparsely investigated. Here, we demonstrate the first strong spontaneous Raman cooling and heating of a longitudinal optical phonon (LOP) with a 6.23 THz frequency in polar semiconductor zinc telluride nanobelts. We use the exciton to resonate and assist photoelastic Raman scattering from the LOPs caused by a strong exciton-LOP coupling. By detuning the laser pump to a lower (higher) energy-resolved sideband to make a spontaneous scattering photon resonate with an exciton at an anti-Stokes (Stokes) frequency, the dipole oscillation of the LOPs is photoelastically attenuated (enhanced) to a colder (hotter) state.

  12. Size dependent optical characterization of semiconductor particle: CdS embedded in polymer matrix

    NASA Astrophysics Data System (ADS)

    Roy, S.; Gogoi, A.; Ahmed, G. A.

    2010-10-01

    We report the optical investigation and analysis of both nano-sized and micrometer size Cadmium Sulphide particles which is embedded in a transparent polyvinyl alcohol (PVOH) dielectric host material. A designed and fabricated laser based light scattering system using a He-Ne laser of wavelength 632.8nm was used for the measurement and study of the scattering properties of the particles as a function of the scattering angle at this wavelength. An attempt was made to experimentally determine the most significant elements of the Mueller scattering matrix using combinations of randomly and linearly polarized incident laser beam and subsequent analyzers in corresponding orientations. The analysis of the experimental data was done by the method of comparison with theoretically generated data. Novel computational technique, involving single scattering for spherical particles using Mie-theory, was developed and applied. The theoretical data was found to be in good agreement with the experimental data within an acceptable margin of error. The results have proved that the combination of the experimental setup and associated computational method is a highly efficient and reliable in-situ system for monitoring size growth of semiconductor particles in the laboratory.

  13. Optical properties and electronic requirements for low-temperature operation of yellow semiconductor LEDs

    NASA Astrophysics Data System (ADS)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.

    2001-05-01

    In such LED applications as lighting, it is desirable to have the highest light output for the lowest power consumption. This paper investigates the optical properties and electronic requirements of a commercially available yellow LED as a function of temperature from ambient to liquid nitrogen temperatures. It was found that the illuminance increased by almost an order of magnitude, producing much higher light output at the same diode current. However, the operating voltage increased, increasing the overall power consumption slightly. The efficiency (light-watt output to electrical watts consumed) of the LED, though, improved by a factor of more than three. This, combined with the enhanced light output, compensates for the small increase in power consumption and added cooling costs. These improvements further translate into a comparable increase in the lifetime of the LEDs. In general, each ten-degree reduction in temperature corresponds to a doubling of the lifetime of semiconductor devices. It was also found that the maximum operating current increased significantly at liquid nitrogen temperatures over that at ambient temperatures. Lastly, the emitted wavelength range shifted to shorter values in addition to the significant increase in brightness. Thus, a yellow- colored LED at room temperature gave off a much brighter yellow-green-white color at liquid nitrogen temperatures.

  14. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

    SciTech Connect

    Agio, Mario

    2002-12-31

    This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

  15. Instabilities in the optical response of a semiconductor quantum dot—metal nanoparticle heterodimer: self-oscillations and chaos

    NASA Astrophysics Data System (ADS)

    Nugroho, Bintoro S.; Iskandar, Alexander A.; Malyshev, Victor A.; Knoester, Jasper

    2017-01-01

    We theoretically investigate the nonlinear optical response of a heterodimer comprising a semiconductor quantum dot strongly coupled to a metal nanoparticle. The quantum dot is considered as a three-level ladder system with ground, one-exciton, and bi-exction states. As compared to the case of a two-level quantum dot model, adding the third (bi-exciton) state produces fascinating effects in the optical response of the hybrid system. Specifically, we demonstrate that the system may exhibit picosecond and sub-picosecond self-oscillations and quasi-chaotic behaviour under single-frequency continuous wave excitation. An isolated semiconductor quantum dot does not show such features. The effects originate from competing one-exciton and bi-exciton transitions in the semiconductor quantum dot, triggered by the self-action of the quantum dot via the metal nanoparticle. The key parameter that governs the phenomena mentioned is the ratio of the self-action strength and the bi-exciton shift. The self-oscillation regime can be achieved in practice, in particular, in a heterodimer comprised of a closely spaced ZnS/ZnSe core-shell quantum dot and a spherical silver nanoparticle. The results may have applications in nanodevices for generating trains of ultrashort optical pulses.

  16. Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    2000-01-01

    Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

  17. Robust intravascular optical coherence elastography driven by acoustic radiation pressure

    NASA Astrophysics Data System (ADS)

    van Soest, Gijs; Bouchard, Richard R.; Mastik, Frits; de Jong, Nico; van der Steen, Anton F. W.

    2007-07-01

    High strain spots in the vessel wall indicate the presence of vulnerable plaques. The majority of acute cardiovascular events are preceded by rupture of such a plaque in a coronary artery. Intracoronary optical coherence tomography (OCT) can be extended, in principle, to an elastography technique, mapping the strain in the vascular wall. However, the susceptibility of OCT to frame-to-frame decorrelation, caused by tissue and catheter motion, inhibits reliable tissue displacement tracking and has to date obstructed the development of OCT-based intravascular elastography. We introduce a new technique for intravascular optical coherence elastography, which is robust against motion artifacts. Using acoustic radiation force, we apply a pressure to deform the tissue synchronously with the line scan rate of the OCT instrument. Radial tissue displacement can be tracked based on the correlation between adjacent lines, instead of subsequent frames in conventional elastography. The viability of the method is demonstrated with a simulation study. The root mean square (rms) error of the displacement estimate is 0.55 μm, and the rms error of the strain is 0.6%. It is shown that high-strain spots in the vessel wall, such as observed at the sites of vulnerable atherosclerotic lesions, can be detected with the technique. Experiments to realize this new elastographic method are presented. Simultaneous optical and ultrasonic pulse-echo tracking demonstrate that the material can be put in a high-frequency oscillatory motion with an amplitude of several micrometers, more than sufficient for accurate tracking with OCT. The resulting data are used to optimize the acoustic pushing sequence and geometry.

  18. Electrical and optical characterization of thrombin-induced permeability of cultured endothelial cell monolayers on semiconductor electrode arrays

    NASA Astrophysics Data System (ADS)

    Hillebrandt, H.; Abdelghani, A.; Abdelghani-Jacquin, C.; Aepfelbacher, M.; Sackmann, E.

    Impedance spectroscopy and phase-contrast microscopy are combined to monitor the electrical and morphological properties of human umbilical vein endothelial cell monolayers. The cells were cultured on optically transparent indium-tin-oxide (ITO) semiconductor electrode arrays coated with collagen IV, and the effect of the inflammatory mediator thrombin on monolayer permeability was monitored in real time. ITO electrodes provide several advantages for these kinds of experiments, because they are optically transparent, polarizable and highly sensitive due to the absence of insulating oxide layers. A qualitative correlation between the thrombin-induced gap formation and the electrical parameters of the cell layer is established.

  19. All-optical frequency downconversion technique utilizing a four-wave mixing effect in a single semiconductor optical amplifier for wavelength division multiplexing radio-over-fiber applications.

    PubMed

    Kim, Hyoung-Jun; Song, Jong-In

    2012-03-26

    An all-optical frequency downconversion utilizing a four-wave mixing effect in a single semiconductor optical amplifier (SOA) was experimentally demonstrated for wavelength division multiplexing (WDM) radio-over-fiber (RoF) applications. Two WDM optical radio frequency (RF) signals having 155 Mbps differential phase shift keying (DPSK) data at 28.5 GHz were simultaneously down-converted to two WDM optical intermediate frequency (IF) signals having an IF frequency of 4.5 GHz by mixing with an optical local oscillator (LO) signal having a LO frequency of 24 GHz in the SOA. The bit-error-rate (BER) performance of the RoF up-links with different optical fiber lengths employing all-optical frequency downconversion was investigated. The receiver sensitivity of the RoF up-link with a 6 km single mode fiber and an optical IF signal in an optical double-sideband format was approximately -8.5 dBm and the power penalty for simultaneous frequency downconversion was approximately 0.63 dB. The BER performance showed a strong dependence on the fiber length due to the fiber dispersion. The receiver sensitivity of the RoF up-link with the optical IF signal in the optical single-sideband format was reduced to approximately -17.4 dBm and showed negligible dependence on the fiber length.

  20. Self-organized optical device driven by motor proteins

    PubMed Central

    Aoyama, Susumu; Shimoike, Masahiko; Hiratsuka, Yuichi

    2013-01-01

    Protein molecules produce diverse functions according to their combination and arrangement as is evident in a living cell. Therefore, they have a great potential for application in future devices. However, it is currently very difficult to construct systems in which a large number of different protein molecules work cooperatively. As an approach to this challenge, we arranged protein molecules in artificial microstructures and assembled an optical device inspired by a molecular system of a fish melanophore. We prepared arrays of cell-like microchambers, each of which contained a scaffold of microtubule seeds at the center. By polymerizing tubulin from the fixed microtubule seeds, we obtained radially arranged microtubules in the chambers. We subsequently prepared pigment granules associated with dynein motors and attached them to the radial microtubule arrays, which made a melanophore-like system. When ATP was added to the system, the color patterns of the chamber successfully changed, due to active transportation of pigments. Furthermore, as an application of the system, image formation on the array of the optical units was performed. This study demonstrates that a properly designed microstructure facilitates arrangement and self-organization of molecules and enables assembly of functional molecular systems. PMID:24065817

  1. Optoelectronics with 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  2. All-optical 1st- and 2nd-order differential equation solvers with large tuning ranges using Fabry-Pérot semiconductor optical amplifiers.

    PubMed

    Chen, Kaisheng; Hou, Jie; Huang, Zhuyang; Cao, Tong; Zhang, Jihua; Yu, Yuan; Zhang, Xinliang

    2015-02-09

    We experimentally demonstrate an all-optical temporal computation scheme for solving 1st- and 2nd-order linear ordinary differential equations (ODEs) with tunable constant coefficients by using Fabry-Pérot semiconductor optical amplifiers (FP-SOAs). By changing the injection currents of FP-SOAs, the constant coefficients of the differential equations are practically tuned. A quite large constant coefficient tunable range from 0.0026/ps to 0.085/ps is achieved for the 1st-order differential equation. Moreover, the constant coefficient p of the 2nd-order ODE solver can be continuously tuned from 0.0216/ps to 0.158/ps, correspondingly with the constant coefficient q varying from 0.0000494/ps(2) to 0.006205/ps(2). Additionally, a theoretical model that combining the carrier density rate equation of the semiconductor optical amplifier (SOA) with the transfer function of the Fabry-Pérot (FP) cavity is exploited to analyze the solving processes. For both 1st- and 2nd-order solvers, excellent agreements between the numerical simulations and the experimental results are obtained. The FP-SOAs based all-optical differential-equation solvers can be easily integrated with other optical components based on InP/InGaAsP materials, such as laser, modulator, photodetector and waveguide, which can motivate the realization of the complicated optical computing on a single integrated chip.

  3. Ultra low-loss, isotropic optical negative-index metamaterial based on hybrid metal-semiconductor nanowires

    PubMed Central

    Paniagua-Domínguez, R.; Abujetas, D. R.; Sánchez-Gil, J. A.

    2013-01-01

    Recently, many fascinating properties predicted for metamaterials (negative refraction, superlensing, electromagnetic cloaking,…) were experimentally demonstrated. Unfortunately, the best achievements have no direct translation to the optical domain, without being burdened by technological and conceptual difficulties. Of particular importance within the realm of optical negative-index metamaterials (NIM), is the issue of simultaneously achieving strong electric and magnetic responses and low associated losses. Here, hybrid metal-semiconductor nanowires are proposed as building blocks of optical NIMs. The metamaterial thus obtained, highly isotropic in the plane normal to the nanowires, presents a negative index of refraction in the near-infrared, with values of the real part well below −1, and extremely low losses (an order of magnitude better than present optical NIMs). Tunability of the system allows to select the operating range in the whole telecom spectrum. The design is proven in configurations such as prisms and slabs, directly observing negative refraction. PMID:23514968

  4. A Modular, IGBT Driven, Ignitron Switched, Optically Controlled Power Supply

    NASA Astrophysics Data System (ADS)

    Carroll, Evan; von der Linden, Jens; You, Setthivoine

    2013-10-01

    An experiment to investigate the dynamics of canonical flux tubes at the University of Washington uses two high energy pulsed power supplies to generate and sustain the plasma discharge. A modular 240 μF , 12 kV DC capacitor based power supply, discharged by ignitron, has been developed specifically for this application. Design considerations include minimizing inductance, rapid switching, fast rise times, and electrically isolated control. An optically coupled front panel and fast IGBT ignitron drive circuit, sequenced manually or by software, control the charge and discharge of the power supply. A complete, sequenced charge/discharge has been successfully tested with a dummy load, producing a peak current of 100 kA and a rise time of 25 μs . This work was sponsored in part by the US DOE Grant DE-SC0010340.

  5. The implementation of Grover's algorithm in optically driven quantum dots

    NASA Astrophysics Data System (ADS)

    Yin, W.; Liang, J. Q.; Yan, Q. W.

    2006-11-01

    In this paper, we study the implementation of Grover's algorithm using the system of three identical quantum dots (QDs) coupled by a multi-frequency optical field. Our result shows that increasing the electric field strength A speeds up the oscillations of the occupations of the excited states rather than increasing the occupation probabilities of those states. The larger the detuning of the field from resonance, the fewer the states which can be used as qubits. Compared with a multi-frequency external field, a single-frequency external field will generate much lower amplitudes of the excited states under the same coupling strength A and interdot Coulomb interaction V. However, when the three quantum dots are coupled with a single-frequency external field, these amplitudes increase on increasing the coupling strength A or decreasing the interdot Coulomb interaction V.

  6. Optical position feedback for electrostatically driven MOEMS scanners

    NASA Astrophysics Data System (ADS)

    Tortschanoff, A.; Baumgart, M.; Frank, A.; Wildenhain, M.; Sandner, T.; Schenk, H.; Kenda, A.

    2012-03-01

    For MOEMS devices which do not have intrinsic on-chip feedback, position information can be provided with optical methods, most simply by using a reflection from the backside of a MOEMS scanner. Measurement of timing signals using fast differential photodiodes can be used for resonant scanner mirrors performing sinusoidal motion with large amplitude. While this approach provides excellent accuracy it cannot be directly extended to arbitrary trajectories or static deflection angles. Another approach is based on the measurement of the position of the reflected laser beam with a quadrant diode. In this work, we present position sensing devices based on either principle and compare both approaches showing first experimental results from the implemented devices

  7. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Orbital magnetization in semiconductors

    NASA Astrophysics Data System (ADS)

    Fang, Cheng; Wang, Zhi-Gang; Li, Shu-Shen; Zhang, Ping

    2009-12-01

    This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin-orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin-orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10-2-10-1 effective Bohr magneton and 10-1-1 e2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.

  8. All-optically driven system in ultrasonic wave-based structural health monitoring

    NASA Astrophysics Data System (ADS)

    Bi, Siwen; Wu, Nan; Zhou, Jingcheng; Zhang, Haifeng; Wang, Xingwei

    2016-04-01

    Ultrasonic wave based structural health monitoring (SHM) is an innovative method for nondestructive detection and an area of growing interest. This is due to high demands for wireless detection in the field of structural engineering. Through optically exciting and detecting ultrasonic waves, electrical wire connections can be avoided, and non-contact SHM can be achieved. With the combination of piezoelectric transducer (PZT) (which possesses high heat resistance) and the noncontact detection, this system has a broad range of applications, even in extreme conditions. This paper reports an all-optically driven SHM system. The resonant frequencies of the PZT transducers are sensitive to a variety of structural damages. Experimental results have verified the feasibility of the all-optically driven SHM system.

  9. Preliminary study of lever-based optical driven micro-actuator

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Lang; Li, Yi-Hsiung; Lin, Chin-Te; Chiang, Chia-Chin; Liu, Yi-Jui; Chung, Tien-Tung; Baldeck, Patrice L.

    2012-04-01

    This study presents a novel type of optically driven lever-based micro-actuator fabricated using two-photon polymerization 3D-microfabrication technique. The lever is composed of a beam, an arch, and a sphere. First, optical tweezers is applied on the spheres to demonstrate the actuation of the lever. A spring is jointed at the lever for verifying the induced forces. Under the dragging by laser focusing, the lever simultaneously turns and results a torque like a mechanical arm. Then, the demonstration of a photo-driven micro-transducer with a mechanical arm and a gear is preformed. The experimental result indicates that our design enables precise manipulation of the mirco-actuator by optical tweezers at micron scale. This study provides a possibility for driving micron-sized structured mechanisms, such as connecting rods, valves. It is expected to contribute on the investigation of "Lab-on-a-chip".

  10. Preparation and optical properties of hexa-tungsten bronze-type CsNbW2O9 semiconductor

    NASA Astrophysics Data System (ADS)

    Li, Ling; Xu, Hui; Chen, Yanhu; Wang, Yong

    2017-04-01

    CsNbW2O9 semiconductor nanoparticles were synthesized by the facile sol-gel method. The morphological characteristics were tested by SEM, TEM, and EDS measurements. The samples crystalized in the uniform nanoparticle with a diameter of about 50 nm. The X-ray polycrystalline diffraction (XRD) measurements and the Rietveld refinements were completed to confirm the successful synthesis of CsNbW2O9 nanoparticles. CsNbW2O9 belongs to an interesting compound of AxWO3-type (A = Cs) hexagonal tungsten bronzes with the partial substitution of W6+ by Nb5+ ions. In contrast to AxWO3 (A = Cs) tungsten bronzes, which are nonstoichiometric compounds with metallic-type conductivity, CsNbW2O9 belongs to a typical semiconductor. The optical absorption, band gap energy and electronic structures were discussed. CsNbW2O9 semiconductor shows an indirect allowed transition with an energy gap of 2.38 eV. Meanwhile, CsNbW2O9 shows a self-activated emission due to d0 transitions in (Nb/W)O6. The luminescence properties of CsNbW2O9 semiconductor with a low quenching temperature were discussed based on the distorted structure.

  11. Carrier-driven disordering in semiconductors: Time-resolved x-ray diffraction and density functional perturbation theory investigations

    NASA Astrophysics Data System (ADS)

    Hillyard, Patrick Brian

    Time-resolved x-ray science has opened the door to a previously inaccessible experimental world. Now the possibility of imaging ultrafast events with atomic spatial resolution is a reality. This dissertation highlights these new experimental techniques and uses them to study the effects of carrier photo-excitation in semiconductors using both time-resolved x-ray diffraction and time-resolved x-ray absorption spectroscopy. I have probed the ultrafast atomic disordering in InSb after intense photoexcitation with ultrafast x-ray diffraction measurements at the Sub-Picosecond Pulse Source (SPPS), The results indicate that three disordering regimes exist, depending on the photoinduced carrier density. At lower carrier densities, disordering occurs via a thermal mechanism, occurring on a picosecond time scale with the dominant relaxation mechanism being the transfer of energy from hot carriers to the lattice. At intermediate carrier density values, the potential energy surface flattens, allowing the atoms to move with the inertial room temperature velocities for approximately ~500 fs at which point other processes take over including thermal energy transfer, atomic collision, and diffusion. At higher carrier densities, it is observed that accelerated atomic disordering occurs, indicating the formation of a repulsive potential energy surface. These experimental observations are in contrast with previous theoretical work and therefore, I have performed calculations using Density Functional Perturbation Theory (DFPT) to more clearly outline the role of excited carriers in lattice destabilization. The calculations show that with increasing carrier density the transverse acoustic modes soften and the lattice destabilizes first in the (100) direction (X point) with 3.7% of the valence band electrons excited into the conduction band. Increasing the carrier density leads to the entire transverse acoustic mode becoming unstable, indicating a repulsive interatomic potential. A

  12. All-optical tunable delay line based on wavelength conversion in semiconductor optical amplifiers and fiber dispersion in single-mode fiber

    NASA Astrophysics Data System (ADS)

    Hu, Zhefeng; Sun, Junqiang

    2008-12-01

    We proposed an all-optical tunable delay line based on wavelength conversion in semiconductor optical amplifiers (SOAs), and group-velocity dispersion (GVD) in single-mode fiber (SMF). The system operates in 1.5 μm window, with a nonreturn-to-zero (NRZ) pattern at 10 Gb/s. The maximal time delay up to 2600 ps is obtained. The scheme achieves continuous control of a wide range of delays, nearly no pulse broadening and very little spectral distortion.

  13. Femtosecond optical characterization and applications in cadmium(manganese) telluride diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Daozhi

    This thesis is devoted to the optical characterization of Cd(Mn)Te single crystals. I present the studies of free-carrier dynamics and generation and detection of coherent acoustic phonons (CAPS) using time-resolved femtosecond pump-probe spectroscopy. The giant Faraday effect and ultrafast responsivity of Cd(Mn)Te to sub-picosecond electromagnetic transients are also demonstrated and discussed in detail. The first, few-picosecond-long electronic process after the initial optical excitation exhibits very distinct characteristic dependence on the excitation condition, and in case of Cd(Mn)Te, it has been attributed to the collective effects of band filling, band renormalization, and two-photon absorption. A closed-form, analytic expression for the differential reflectivity induced by the CAPs is derived based on the propagating-strain-pulse model and it accounts very well for our experimental observations. The accurate values of the Mn concentration and longitudinal sound velocity nu s in Cd(Mn)Te were obtained by fitting the data of the refractive index dependence on the probe wavelength to the Schubert model. In Cd 0.91Mn0.09Te, nus was found to be 3.6x103 m/s. Our comparison studies from the one-color and two-color experiments reveal that the intrinsic phonon lifetime in Cd(Mn)Te was at least on the order of nanoseconds, and the observed exponential damping of the CAP oscillations was due to the finite absorption depth of the probe light. Optically-induced electronic stress has been demonstrated to be the main generation mechanism of CAPs. We also present the giant Faraday effect in the Cd(Mn)Te and the spectra of the Verdet constant, which is mainly due to the exchange interaction between the Mn ions and band electrons. The spectral characteristics of the Verdet constant in Cd(Mn)Te exhibit very unique features compared to that in pure semiconductors. In our time-resolved sampling experiments at the room temperature, the response of the Cd(Mn)Te, particularly

  14. Method of all-optical frequency encoded decimal to binary and binary coded decimal, binary to gray, and gray to binary data conversion using semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Garai, Sisir Kumar

    2011-07-01

    Conversion of optical data from decimal to binary format is very important in optical computing and optical signal processing. There are many binary code systems to represent decimal numbers, the most common being the binary coded decimal (BCD) and gray code system. There are a wide choice of BCD codes, one of which is a natural BCD having a weighted code of 8421, by means of which it is possible to represent a decimal number from 0 to 9 with a combination of 4bit binary digits. The reflected binary code, also known as the Gray code, is a binary numeral system where two successive values differ in only 1bit. The Gray code is very important in digital optical communication as it is used to prevent spurious output from optical switches as well as to facilitate error correction in digital communications in an optical domain. Here in this communication, the author proposes an all-optical frequency encoded method of ``:decimal to binary, BCD,'' ``binary to gray,'' and ``gray to binary'' data conversion using the high-speed switching actions of semiconductor optical amplifiers. To convert decimal numbers to a binary form, a frequency encoding technique is adopted to represent two binary bits, 0 and 1. The frequency encoding technique offers advantages over conventional encoding techniques in terms of less probability of bit errors and greater reliability. Here the author has exploited the polarization switch made of a semiconductor optical amplifier (SOA) and a property of nonlinear rotation of the state of polarization of the probe beam in SOA for frequency conversion to develop the method of frequency encoded data conversion.

  15. 10-Gbps optical duobinary signal generated by bandwidth-limited reflective semiconductor optical amplifier in colorless optical network units and compensated by fiber Bragg grating-based equalizer in optical line terminal

    NASA Astrophysics Data System (ADS)

    Fu, Meixia; Zhang, Min; Wang, Danshi; Cui, Yue; Han, Huanhuan

    2016-10-01

    We propose a scheme of optical duobinary-modulated upstream transmission system for reflective semiconductor optical amplifier-based colorless optical network units in 10-Gbps wavelength-division multiplexed passive optical network (WDM-PON), where a fiber Bragg grating (FBG) is adopted as an optical equalizer for better performance. The demodulation module is extremely simple, only needing a binary intensity modulation direct detection receiver. A better received sensitivity of -16.98 dBm at bit rate error (BER)=1.0×10-4 can be achieved at 120 km without FBG, and the BER at the sensitivity of -18.49 dBm can be up to 2.1×10-5 at the transmission distance of 160 km with FBG, which demonstrates the feasibility of our proposed scheme. Moreover, it could be a high cost-effectiveness scheme for WDM-PON in the future.

  16. Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties

    SciTech Connect

    Uddin, M. R.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-03-07

    Hexagonal boron nitride carbon, h(BN){sub 1-x}(C{sub 2}){sub x}, semiconductor alloys have been grown on sapphire substrates by metal-organic chemical vapor deposition. Bandgap tuning through compositional variation has been demonstrated via optical absorption measurements. Furthermore, an enhancement of approximately 10 orders of magnitude in the electrical conductivity has been attained by increasing the carbon concentration (x) from 0 to 0.21. Experimental results revealed evidences that the critical carbon concentration x{sub c} to form the homogenous h(BN){sub 1-x}(C{sub 2}){sub x} alloys, or the carbon solubility in hBN is about 3.2% at a growth temperature of 1300 °C before carbon clusters form. Based on the predicted phase diagram of cubic (BN){sub 1-x}(C{sub 2}){sub x} and the excellent matches in the structural and thermal properties of hBN and graphite, it is expected that homogenous h(BN){sub 1-x}(C{sub 2}){sub x} alloys with higher x can be achieved and the alloy miscibility gap can be reduced or completely removed by increasing the growth temperature. This is a huge advantage over the InGaN alloy system in which InN decomposes at high temperatures and high growth temperature cannot be utilized to close the miscibility gap. The results indicate that the h(BN){sub 1-x}(C{sub 2}){sub x} alloy system has the potential to tackle the challenging issues facing the emerging two-dimension materials beyond graphene, which include realizing the bandgap engineering, conductivity control, and large wafers of homogeneous films.

  17. Access to long-term optical memories using photon echoes retrieved from electron spins in semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Poltavtsev, S. V.; Langer, L.; Yugova, I. A.; Salewski, M.; Kapitonov, Y. V.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2016-10-01

    We use spontaneous (two-pulse) and stimulated (three-pulse) photon echoes for studying the coherent evolution of optically excited ensemble of trions which are localized in semiconductor CdTe/CdMgTe quantum well. Application of transverse magnetic field leads to the Larmor precession of the resident electron spins, which shuffles optically induced polarization between optically accessible and inaccessible states. This results in several spectacular phenomena. First, magnetic field induces oscillations of spontaneous photon echo amplitude. Second, in three-pulse excitation scheme, the photon echo decay is extended by several orders of magnitude. In this study, short-lived optical excitation which is created by the first pulse is coherently transferred into a long-lived electron spin state using the second optical pulse. This coherent spin state of electron ensemble persists much longer than any optical excitation in the system, preserving information on initial optical field, which can be retrieved as a photon echo by means of third optical pulse.

  18. Effect of Na substitution on electronic and optical properties of CuInS{sub 2} chalcopyrite semiconductor

    SciTech Connect

    Mishra, S.; Ganguli, B.

    2015-12-15

    Electronic & optical properties of Na substituted CuNaIn{sub 2}S{sub 4} chalcopyrite semiconductors are significantly modified due to Na substitution in the Cu deficient CuInS{sub 2} semiconductor. These properties are obtained form first principle calculation using density functional theory based tight binding Linear muffin tin orbital method. The presence of Na alters the structural distortion and enhances strengths of Cu d and S p hybridization in CuNaIn{sub 2}S{sub 4}. This effect reduces band gap, in agreement with experimental observations and modify other properties significantly. Calculations of optical matrix elements (OME) and joint density of states (JDOS) show that effects of Na substitution on optical properties come through p–d hybridization and structural distortion. OME contribution is prominent near band edge. Both systems show anisotropic optical properties. - Graphical abstract: The figure shows the band structure and total density of states of CuNaIn{sub 2}S{sub 4}. It illustrates energy bands at various symmetry points, band gap and contribution of various orbitals.

  19. Visible Light Driven Photocatalytic Reactor Based on Micro-structured Polymer Optical Fiber Preform

    NASA Astrophysics Data System (ADS)

    Li, Dong-Dong; She, Jiang-Bo; Wang, Chang-Shun; Peng, Bo

    2014-05-01

    A novel visible light driven photocatalytic reactor with 547 pieces of Ag/AgBr-film-modified capillaries is reported and it is derived from a microstructured polymer optical fiber (MPOF) preform. The MPOF preform not only plays the role of a light-transmitting media, but it is also a Ag/AgBr supporting and waste-water pipe to supply the photocatalytic degradation of dyes solute. The photocatalytic reactor has such a large surface area for Ag/AgBr loading, which is a visible light driven photocatalyst that photodegradation efficiency is enhanced.

  20. Modelling for Transient Optically Induced Metal - Transitions in Narrow-Gap Semiconductors and Semimetals.

    NASA Astrophysics Data System (ADS)

    Vidal, Jordina

    1994-01-01

    The theoretical work presented in this thesis is based on models developed to interpret a series of optical experiments with short-pulse lasers, which allow a time -domain study of phenomena on a sub-picosecond timescale. By means of a pump-probe technique, we observe large amplitude oscillations in the time domain reflectivity response of a series of narrow-gap semiconductors and semimetals. The oscillations have the frequency of the fully-symmetric optical phonon mode of the system, and are maximally displaced from their midpoint value at zero time delay between pump and probe. These features indicate that a coherent phonon vibration is generated in these materials via an electronic excitation at different points of the Brillouin zone, which displaces instantaneously the equilibrium positions of the atoms. It is precisely this generation of coherent phonons that makes the time-domain technique distinct from conventional frequency domain techniques, such as Raman and neutron scattering. Using a range of theoretical techniques, from nearly free electron models to state-of-the art ab initio calculations, I have made quantitative microscopic evaluations of the coherent phonon phenomenon. The studies focus on two unique aspects of having such coherent atomic vibrations in a narrow gap material, with special emphasis on the group V semimetals Sb and Bi. First of all, I have performed dynamical band structure calculations, as a function of the coherent atomic motion, in order to inspect the possibility of a transient metal-insulator transition at a terahertz frequency. Secondly, I have calculated the evolution of the displaced atoms in quasi-equilibrium with the laser -excited carriers, as the electron-ion coupled system returns to its ground state equilibrium. These calculations are fundamental, insofar they provide a quantitative microscopic description of the coherent phonon phenomenon. Moreover, the predicted magnitude of the atomic displacements, and the resulting

  1. All-optical 4-bit binary to binary coded decimal converter with the help of semiconductor optical amplifier-assisted Sagnac switch

    NASA Astrophysics Data System (ADS)

    Bhattachryya, Arunava; Kumar Gayen, Dilip; Chattopadhyay, Tanay

    2013-04-01

    All-optical 4-bit binary to binary coded decimal (BCD) converter has been proposed and described, with the help of semiconductor optical amplifier (SOA)-assisted Sagnac interferometric switches in this manuscript. The paper describes all-optical conversion scheme using a set of all-optical switches. BCD is common in computer systems that display numeric values, especially in those consisting solely of digital logic with no microprocessor. In many personal computers, the basic input/output system (BIOS) keep the date and time in BCD format. The operations of the circuit are studied theoretically and analyzed through numerical simulations. The model accounts for the SOA small signal gain, line-width enhancement factor and carrier lifetime, the switching pulse energy and width, and the Sagnac loop asymmetry. By undertaking a detailed numerical simulation the influence of these key parameters on the metrics that determine the quality of switching is thoroughly investigated.

  2. Thermal and Optical Modulation of the Carrier Mobility in OTFTs Based on an Azo-anthracene Liquid Crystal Organic Semiconductor.

    PubMed

    Chen, Yantong; Li, Chao; Xu, Xiuru; Liu, Ming; He, Yaowu; Murtaza, Imran; Zhang, Dongwei; Yao, Chao; Wang, Yongfeng; Meng, Hong

    2017-03-01

    One of the most striking features of organic semiconductors compared with their corresponding inorganic counterparts is their molecular diversity. The major challenge in organic semiconductor material technology is creating molecular structural motifs to develop multifunctional materials in order to achieve the desired functionalities yet to optimize the specific device performance. Azo-compounds, because of their special photoresponsive property, have attracted extensive interest in photonic and optoelectronic applications; if incorporated wisely in the organic semiconductor groups, they can be innovatively utilized in advanced smart electronic applications, where thermal and photo modulation is applied to tune the electronic properties. On the basis of this aspiration, a novel azo-functionalized liquid crystal semiconductor material, (E)-1-(4-(anthracen-2-yl)phenyl)-2-(4-(decyloxy)phenyl)diazene (APDPD), is designed and synthesized for application in organic thin-film transistors (OTFTs). The UV-vis spectra of APDPD exhibit reversible photoisomerizaton upon photoexcitation, and the thin films of APDPD show a long-range orientational order based on its liquid crystal phase. The performance of OTFTs based on this material as well as the effects of thermal treatment and UV-irradiation on mobility are investigated. The molecular structure, stability of the material, and morphology of the thin films are characterized by thermal gravimetric analysis (TGA), polarizing optical microscopy (POM), (differential scanning calorimetry (DSC), UV-vis spectroscopy, atomic force microscopy (AFM), and scanning tunneling microscopy (STM). This study reveals that our new material has the potential to be applied in optical sensors, memories, logic circuits, and functional switches.

  3. Tunable and switchable multi-wavelength fiber laser based on semiconductor optical amplifier and twin-core photonic crystal fiber

    NASA Astrophysics Data System (ADS)

    Kim, Bongkyun; Han, Jihee; Chung, Youngjoo

    2012-02-01

    Multi-wavelength fiber lasers have attracted a lot of interest, recently, because of their potential applications in wavelength-division-multiplexing (WDM) systems, optical fiber sensing, and fiber-optics instruments, due to their numerous advantages such as multiple wavelength operation, low cost, and compatibility with the fiber optic systems. Semiconductor optical amplifier (SOA)-based multi-wavelength fiber lasers exhibit stable operation because of the SOA has the property of primarily inhomogeneous broadening and thus can support simultaneous oscillation of multiple lasing wavelengths. In this letter, we propose and experimentally demonstrate a switchable multi-wavelength fiber laser employing a semiconductor optical amplifier and twin-core photonic crystal fiber (TC-PCF) based in-line interferometer comb filter. The fabricated two cores are not symmetric due to the associated fiber fabrication process such as nonuniform heat gradient in furnace and asymmetric microstructure expansion during the gas pressurization which results in different silica strut thickness and core size. The induced asymmetry between two cores considerably alters the linear power transfer, by seriously reducing it. These nominal twin cores form effective two optical paths and associated effective refractive index difference. The in-fiber comb filter is effectively constructed by splicing a section of TC-PCF between two single mode fibers (SMFs). The proposed laser can be designed to operate in stable multi-wavelength lasing states by adjusting the states of the polarization controller (PC). The lasing modes are switched by varying the state of PC and the change is reversible. In addition, we demonstrate a tunable multi-wavelength fiber laser operation by applying temperature changes to TC-PCF in the multi-channel filter.

  4. Deformation Measurement of a Driven Pile Using Distributed Fibre-optic Sensing

    NASA Astrophysics Data System (ADS)

    Monsberger, Christoph; Woschitz, Helmut; Hayden, Martin

    2016-03-01

    New developments in distributed fibre-optic sensing allow the measurement of strain with a very high precision of about 1 µm / m and a spatial resolution of 10 millimetres or even better. Thus, novel applications in several scientific fields may be realised, e. g. in structural monitoring or soil and rock mechanics. Especially due to the embedding capability of fibre-optic sensors, fibre-optic systems provide a valuable extension to classical geodetic measurement methods, which are limited to the surface in most cases. In this paper, we report about the application of an optical backscatter reflectometer for deformation measurements along a driven pile. In general, pile systems are used in civil engineering as an efficient and economic foundation of buildings and other structures. Especially the length of the piles is crucial for the final loading capacity. For optimization purposes, the interaction between the driven pile and the subsurface material is investigated using pile testing methods. In a field trial, we used a distributed fibre-optic sensing system for measuring the strain below the surface of an excavation pit in order to derive completely new information. Prior to the field trial, the fibre-optic sensor was investigated in the laboratory. In addition to the results of these lab studies, we briefly describe the critical process of field installation and show the most significant results from the field trial, where the pile was artificially loaded up to 800 kN. As far as we know, this is the first time that the strain is monitored along a driven pile with such a high spatial resolution.

  5. Coherent control of a strongly driven silicon vacancy optical transition in diamond

    PubMed Central

    Zhou, Yu; Rasmita, Abdullah; Li, Ke; Xiong, Qihua; Aharonovich, Igor; Gao, Wei-bo

    2017-01-01

    The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid-state emitters have emerged as promising candidates with their prospects for on-chip integration as quantum nodes and sources of coherent photons connecting these nodes. Under a strongly driving resonant laser field, such quantum emitters can exhibit quantum behaviour such as Autler–Townes splitting and the Mollow triplet spectrum. Here we demonstrate coherent control of a strongly driven optical transition in silicon vacancy centre in diamond. Rapid optical detection of photons enabled the observation of time-resolved coherent Rabi oscillations and the Mollow triplet spectrum. Detection with a probing transition further confirmed Autler–Townes splitting generated by a strong laser field. The coherence time of the emitted photons is comparable to its lifetime and robust under a very strong driving field, which is promising for the generation of indistinguishable photons. PMID:28218237

  6. Coherent control of a strongly driven silicon vacancy optical transition in diamond

    NASA Astrophysics Data System (ADS)

    Zhou, Yu; Rasmita, Abdullah; Li, Ke; Xiong, Qihua; Aharonovich, Igor; Gao, Wei-Bo

    2017-02-01

    The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid-state emitters have emerged as promising candidates with their prospects for on-chip integration as quantum nodes and sources of coherent photons connecting these nodes. Under a strongly driving resonant laser field, such quantum emitters can exhibit quantum behaviour such as Autler-Townes splitting and the Mollow triplet spectrum. Here we demonstrate coherent control of a strongly driven optical transition in silicon vacancy centre in diamond. Rapid optical detection of photons enabled the observation of time-resolved coherent Rabi oscillations and the Mollow triplet spectrum. Detection with a probing transition further confirmed Autler-Townes splitting generated by a strong laser field. The coherence time of the emitted photons is comparable to its lifetime and robust under a very strong driving field, which is promising for the generation of indistinguishable photons.

  7. Theory of Enhanced Interlayer Tunneling in Optically Driven High-T_{c} Superconductors.

    PubMed

    Okamoto, Jun-Ichi; Cavalleri, Andrea; Mathey, Ludwig

    2016-11-25

    Motivated by recent pump-probe experiments indicating enhanced coherent c-axis transport in underdoped YBCO, we study Josephson junctions periodically driven by optical pulses. We propose a mechanism for this observation by demonstrating that a parametrically driven Josephson junction shows an enhanced imaginary part of the low-frequency conductivity when the driving frequency is above the plasma frequency, implying an effectively enhanced Josephson coupling. We generalize this analysis to a bilayer system of Josephson junctions modeling YBCO. Again, the Josephson coupling is enhanced when the pump frequency is blue detuned to either of the two plasma frequencies of the material. We show that the emergent driven state is a genuine, nonequilibrium superconducting state, in which equilibrium relations between the Josephson coupling, current fluctuations, and the critical current no longer hold.

  8. Theory of Enhanced Interlayer Tunneling in Optically Driven High-Tc Superconductors

    NASA Astrophysics Data System (ADS)

    Okamoto, Jun-ichi; Cavalleri, Andrea; Mathey, Ludwig

    2016-11-01

    Motivated by recent pump-probe experiments indicating enhanced coherent c -axis transport in underdoped YBCO, we study Josephson junctions periodically driven by optical pulses. We propose a mechanism for this observation by demonstrating that a parametrically driven Josephson junction shows an enhanced imaginary part of the low-frequency conductivity when the driving frequency is above the plasma frequency, implying an effectively enhanced Josephson coupling. We generalize this analysis to a bilayer system of Josephson junctions modeling YBCO. Again, the Josephson coupling is enhanced when the pump frequency is blue detuned to either of the two plasma frequencies of the material. We show that the emergent driven state is a genuine, nonequilibrium superconducting state, in which equilibrium relations between the Josephson coupling, current fluctuations, and the critical current no longer hold.

  9. Entanglement of two optically driven quantum dots mediated by phonons in nanomechanical resonator

    NASA Astrophysics Data System (ADS)

    He, Yong; Jiang, Meiping

    2017-01-01

    The exciton-phonon coupling between an optically driven quantum dot (QD) and a mechanical resonator can be described by Jaynes-Cummings model under a certain condition, revealing phonon absorption and emission. When two optically driven QDs share a common phonon mode, it shows the phonon-mediated coupling between the QDs. Based on the effective master equation for the reduced density matrix of the two QDs, the temporal evolution of each state and the concurrence (quantum entanglement) between them are studied. The results suggest that the stationary concurrence depends strongly on the resonator temperature. The non-negligible entanglement in the hybrid system is advantaged to develop solid-state quantum information processing.

  10. Grouping of optic flow stimuli during binocular rivalry is driven by monocular information.

    PubMed

    Holten, Vivian; Stuit, Sjoerd M; Verstraten, Frans A J; van der Smagt, Maarten J

    2016-10-01

    During binocular rivalry, perception alternates between two dissimilar images, presented dichoptically. Although binocular rivalry is thought to result from competition at a local level, neighboring image parts with similar features tend to be perceived together for longer durations than image parts with dissimilar features. This simultaneous dominance of two image parts is called grouping during rivalry. Previous studies have shown that this grouping depends on a shared eye-of-origin to a much larger extent than on image content, irrespective of the complexity of a static image. In the current study, we examine whether grouping of dynamic optic flow patterns is also primarily driven by monocular (eye-of-origin) information. In addition, we examine whether image parameters, such as optic flow direction, and partial versus full visibility of the optic flow pattern, affect grouping durations during rivalry. The results show that grouping of optic flow is, as is known for static images, primarily affected by its eye-of-origin. Furthermore, global motion can affect grouping durations, but only under specific conditions. Namely, only when the two full optic flow patterns were presented locally. These results suggest that grouping during rivalry is primarily driven by monocular information even for motion stimuli thought to rely on higher-level motion areas.

  11. Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

    SciTech Connect

    Tilka, J. A.; Park, J.; Ahn, Y.; Pateras, A.; Sampson, K. C.; Savage, D. E.; Prance, J. R.; Simmons, C. B.; Coppersmith, S. N.; Eriksson, M. A.; Lagally, M. G.; Holt, M. V.; Evans, P. G.

    2016-07-06

    Here, the highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent xray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.

  12. Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

    DOE PAGES

    Tilka, J. A.; Park, J.; Ahn, Y.; ...

    2016-07-06

    Here, the highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent xray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patternsmore » of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.« less

  13. Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Zuleta, J. N.; Reyes-Gómez, E.

    2016-05-01

    The interband optical absorption spectra of a GaAs-Ga1-xAlxAs variably spaced semiconductor superlattice under crossed in-plane magnetic and growth-direction applied electric fields are theoretically investigated. The electronic structure, transition strengths and interband absorption coefficients are analyzed within the weak and strong magnetic-field regimes. A dramatic quenching of the absorption coefficient is observed, in the weak magnetic-field regime, as the applied electric field is increased, in good agreement with previous experimental measurements performed in a similar system under growth-direction applied electric fields. A decrease of the resonant tunneling in the superlattice is also theoretically obtained in the strong magnetic-field regime. Moreover, in this case, we found an interband absorption coefficient weakly dependent on the applied electric field. Present theoretical results suggest that an in-plane magnetic field may be used to tune the optical properties of variably spaced semiconductor superlattices, with possible future applications in solar cells and magneto-optical devices.

  14. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

    NASA Astrophysics Data System (ADS)

    Li, Min; Mi, Xian-Wu

    2009-12-01

    Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertz emission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is driven by the dc and ac electric fields. The slow variation in the intraband polarization depends on the ac electric field frequency. The intraband polarization increases when the ac electric field frequency is below the Bloch frequency. When the ac electric field frequency is above the Bloch frequency, the intraband polarization downwards and its intensity decreases. The satellite structures in the optical absorption spectra are presented. Due to excitonic dynamic localization, the emission lines of terahertz shift in different ac electric field and dc electric field.

  15. Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Kumar Thota, Venkata Ramana

    Semiconductor nanostructures such as quantum dots, quantum wires and quantum wells have gained significant attention in the scientific community due to their peculiar properties, which arise from the quantum confinement of charge carriers. In such systems, confinement plays key role and governs the emission spectra. With the advancements in growth techniques, which enable the fabrication of these nanostructured devices with great precision down to the atomic scale, it is intriguing to study and observe quantum mechanical effects through light-matter interactions and new physics governed by the confinement, size, shape and alloy composition. The goal is to reduce the size of semiconductor bulk material to few nanometers, which in turn localizes the charge carriers inside these structures such that the spin associated with them is used to carry and process information within ultra-short time scales. The main focus of this dissertation is the optical studies of quantum dot molecule (QDM) systems. A system where the electrons can tunnel between the two dots leading to observable tunneling effects. The emission spectra of such system has been demonstrated to have both intradot transitions (electron-hole pair residing in the same dot) and interdot transitions (electron-hole pair participating in the recombination origin from different dots). In such a system, it is possible to apply electric field such that the wavefunction associated with the charge carriers can be tuned to an extent of delocalizing between the two dots. This forms the first project of this dissertation, which addresses the origin of the fine structure splitting in the exciton-biexciton cascade. Moreover, we also show how this fine structure can be tuned in the quantum dot molecule system with the application of electric field along the growth direction. This is demonstrated through high resolution polarization dependent photoluminescence spectroscopy on a single QDM, which was described in great detail

  16. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

    PubMed

    Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

    2015-12-02

    Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

  17. Sideband locking of a single-section semiconductor distributed-feedback laser in an optical phase-lock loop.

    PubMed

    Satyan, Naresh; Vasilyev, Arseny; Liang, Wei; Rakuljic, George; Yariv, Amnon

    2009-11-01

    The bandwidth and performance of optical phase-lock loops (OPLLs) using single-section semiconductor lasers (SCLs) are severely limited by the nonuniform frequency modulation response of the lasers. It is demonstrated that this restriction is eliminated by the sideband locking of a single-section distributed-feedback SCL to a master laser in a heterodyne OPLL, thus enabling a delay-limited loop bandwidth. The lineshape of the phase-locked SCL output is characterized using a delayed self-heterodyne measurement.

  18. Optimisation of 40 Gb/s wavelength converters based on four-wave mixing in a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Schulze, K.; Petersen, M. N.; Herrera, J.; Ramos, F.; Marti, J.

    2007-08-01

    The optimum operating powers and wavelengths for a 40 Gb/s wavelength converter based on four-wave mixing in a semiconductor optical amplifier are inferred from experimental results. From these measurements, some general rules of thumb are derived for this kind of devices. Generally, the optimum signal power should be 10 dB lower than the pump power (-16 dB conversion efficiency) whereas the wavelength separation between the signal and the pump carrier should not be lower than about four times the signal bitrate (1.3 nm for 40 Gb/s RZ signals).

  19. Switchable dual-wavelength fiber laser based on semiconductor optical amplifier and polarization-maintaining fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Feng, Suchun; Xu, Ou; Lu, Shaohua; Ren, Wenhua; Jian, Shuisheng

    2008-12-01

    Switchable dual-wavelength with orthogonal polarizations fiber laser based on semiconductor optical amplifier (SOA) and polarization-maintaining fiber Bragg grating (PMFBG) at room temperature is proposed. Owing to the polarization dependent loss of the PMFBG, the laser can be designed to operate in stable dual-wavelength or wavelength-switching modes with a wavelength spacing of 0.336 nm at room temperature by adjusting the polarization controller (PC). The amplitude variation in nearly half an hour is less than 0.1 dB for both wavelengths, which is more stable than that of erbium doped fiber (EDF)-based laser with similar configuration.

  20. Direct measurement of lattice dynamics and optical phonon excitation in semiconductor nanocrystals using femtosecond stimulated Raman spectroscopy.

    PubMed

    Hannah, Daniel C; Brown, Kristen E; Young, Ryan M; Wasielewski, Michael R; Schatz, George C; Co, Dick T; Schaller, Richard D

    2013-09-06

    We report femtosecond stimulated Raman spectroscopy measurements of lattice dynamics in semiconductor nanocrystals and characterize longitudinal optical (LO) phonon production during confinement-enhanced, ultrafast intraband relaxation. Stimulated Raman signals from unexcited CdSe nanocrystals produce a spectral shape similar to spontaneous Raman signals. Upon photoexcitation, stimulated Raman amplitude decreases owing to experimentally resolved ultrafast phonon generation rates within the lattice. We find a ∼600  fs, particle-size-independent depletion time attributed to hole cooling, evidence of LO-to-acoustic down-conversion, and LO phonon mode softening.

  1. Switchable single-longitudinal-mode dual-wavelength erbium-doped fiber ring laser incorporating a semiconductor optical amplifier.

    PubMed

    Pan, Shilong; Zhao, Xiaofan; Lou, Caiyun

    2008-04-15

    We propose and demonstrate a novel single-longitudinal-mode (SLM) dual-wavelength erbium-doped fiber ring laser incorporating a semiconductor optical amplifier. The SOA biased in its low-gain regime greatly reduces the gain competition of the two wavelengths. The stable SLM operation is guaranteed by a passive triple-ring cavity and a fiber Fabry-Perot filter. The dual-wavelength output with a 40 GHz wavelength spacing is switchable in the range of 1533-1565.4 nm.

  2. Efficient Light-driven Long Distance Charge Separation and H2 Generation in Semiconductor Quantum Rods and Nanoplatelets

    NASA Astrophysics Data System (ADS)

    Lian, Tianquan

    Quantum confined semiconductor nanocrystals (0D quantum dots, 1D quantum rods and 2D quantum platlets) have been intensively investigated as light harvesting and charge separation materials for photovoltaic and photocatalytic applications. The efficiency of these semiconductor nanocrystal-based devices depends on many fundamental processes, including light harvesting, carrier relaxation, exciton localization and transport, charge separation and charge recombination. The competition between these processes determines the overall solar energy conversion (solar to electricity or fuel) efficiency. Semiconductor nano-heterostructures, combining two or more material components, offer unique opportunities to control their charge separation properties by tailoring their compositions, dimensions and spatial arrangement. Further integration of catalysts (heterogeneous or homogeneous) to these materials form multifunctional nano-heterostructures. Using 0D, 1D and 2D CdSe/CdS/Pt heterostructures as model systems, we directly probe the above-mentioned fundamental exciton and carrier processes by transient absorption and time-resolved fluorescence spectroscopy. We are examining how to control these fundamental processes through the design of heterostructures to achieve long-lived charge separation and efficient H2 generation. In this talk, we will discuss a new model for exciton dissociation by charge transfer in quantum dots (i.e. Auger assisted electron transfer), mechanism of 1D and 2D exciton transport and dissociation in nanorods, and key factors limiting H2 generation efficiency in CdSe/CdS/Pt nanorod heterostructures.

  3. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  4. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems

    SciTech Connect

    Chen, Ying

    2011-01-01

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in π-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at ΔmS=±1 and ΔmS=±2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal

  5. Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

    DOE PAGES

    Gehl, Michael; Gibson, Ricky; Zandbergen, Sander; ...

    2016-02-01

    Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors,more » with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.« less

  6. Magneto-optical Faraday rotation of semiconductor nanoparticles embedded in dielectric matrices.

    PubMed

    Savchuk, Andriy I; Stolyarchuk, Ihor D; Makoviy, Vitaliy V; Savchuk, Oleksandr A

    2014-04-01

    Faraday rotation has been studied for CdS, CdTe, and CdS:Mn semiconductor nanoparticles synthesized by colloidal chemistry methods. Additionally these materials were prepared in a form of semiconductor nanoparticles embedded in polyvinyl alcohol films. Transmission electron microscopy and atomic force microscopy analyses served as confirmation of nanocrystallinity and estimation of the average size of the nanoparticles. Spectral dependence of the Faraday rotation for the studied nanocrystals and nanocomposites is correlated with a blueshift of the absorption edge due to the confinement effect in zero-dimensional structures. Faraday rotation spectra and their temperature behavior in Mn-doped nanocrystals demonstrates peculiarities, which are associated with s, p-d exchange interaction between Mn²⁺ ions and band carriers in diluted magnetic semiconductor nanostructures.

  7. Nano-stepper-driven optical shutter for applications in free-space micro-optics

    NASA Astrophysics Data System (ADS)

    Zawadzka, Justyna; Li, Lijie; Unamuno, Anartz; Uttamchandani, Deepak G.

    2002-09-01

    In this paper we report a simple design of a micro-optical shutter/attenuator. The standard MUMPS process was used to fabricate the device. A vertically erected, gold-coated, 200x300 mm side length micro-mirror was precisely placed between the end faces of two closely spaced optical fibers. The position of the micro-mirror with respect to the optical fiber end face was controlled by a nano-stepping motor array. Optical and mechanical tests were performed on the device. A 1.55 mm laser beam was sent along the optical fiber. When the micro-mirror was removed from the front of the fiber, the coupling efficiency between two fibers was -10 dBm. Once the micro-mirror was placed in the optical path the coupling efficiency dropped to -51.5 dBm. The best attenuation was obtained when the micro-mirror blocked the whole cross-section of the laser beam diameter. It is evident that the device can operate as a high precision fiber optic attenuator or shutter.

  8. Coherent spectroscopy of semiconductors.

    PubMed

    Cundiff, Steven T

    2008-03-31

    The coherent optical response of semiconductors has been the subject of substantial research over the last couple of decades. The interest has been motivated by unique aspects of the interaction between light and semiconductors that are revealed by coherent techniques. The ability to probe the dynamics of charge carriers has been a significant driver. This paper presents a review of selected results in coherent optical spectroscopy of semiconductors.

  9. Progressive Design of Plasmonic Metal-Semiconductor Ensemble toward Regulated Charge Flow and Improved Vis-NIR-Driven Solar-to-Chemical Conversion.

    PubMed

    Han, Chuang; Quan, Quan; Chen, Hao Ming; Sun, Yugang; Xu, Yi-Jun

    2017-04-01

    Surface plasmon resonance (SPR)-mediated photocatalysis without the bandgap limitations of traditional semiconductor has aroused significant attention in solar-to-chemical energy conversion. However, the photocatalytic efficiency barely initiated by the SPR effects is still challenged by the low concentration and ineffective extraction of energetic hot electrons, slow charge migration rates, random charge diffusion directions, and the lack of highly active sites for redox reactions. Here, the tunable, progressive harvesting of visible-to-near infrared light (vis-NIR, λ > 570 nm) by designing plasmonic Au nanorods and metal (Au, Ag, or Pt) nanoparticle codecorated 1D CdS nanowire (1D CdS NW) ensemble is reported. The intimate integration of these metal nanostructures with 1D CdS NWs promotes the extraction and manipulated directional separation and migration of hot charge carriers in a more effective manner. Such cooperative synergy with tunable control of interfacial interaction, morphology optimization, and cocatalyst strategy results in the distinctly boosted performance for vis-NIR-driven plasmonic photocatalysis. This work highlights the significance of rationally progressive design of plasmonic metal-semiconductor-based composite system for boosting the regulated directional flow of hot charge carrier and thus the more efficient use of broad-spectrum solar energy conversion.

  10. Optically controlled dense current structures driven by relativistic plasma aperture-induced diffraction

    NASA Astrophysics Data System (ADS)

    Gonzalez-Izquierdo, Bruno; Gray, Ross J.; King, Martin; Dance, Rachel J.; Wilson, Robbie; McCreadie, John; Butler, Nicholas M. H.; Capdessus, Remi; Hawkes, Steve; Green, James S.; Borghesi, Marco; Neely, David; McKenna, Paul

    2016-05-01

    The collective response of charged particles to intense fields is intrinsic to plasma accelerators and radiation sources, relativistic optics and many astrophysical phenomena. Here we show that a relativistic plasma aperture is generated in thin foils by intense laser light, resulting in the fundamental optical process of diffraction. The plasma electrons collectively respond to the resulting laser near-field diffraction pattern, producing a beam of energetic electrons with a spatial structure that can be controlled by variation of the laser pulse parameters. It is shown that static electron-beam and induced-magnetic-field structures can be made to rotate at fixed or variable angular frequencies depending on the degree of ellipticity in the laser polarization. The concept is demonstrated numerically and verified experimentally, and is an important step towards optical control of charged particle dynamics in laser-driven dense plasma sources.

  11. Optically driven self-oscillations of a silica nanospike at low gas pressures

    NASA Astrophysics Data System (ADS)

    Xie, Shangran; Pennetta, Riccardo; Noskov, Roman E.; Russell, Philip St. J.

    2016-09-01

    We report light-driven instability and optomechanical self-oscillation of a fused silica "nanospike" at low gas pressures. The nanospike (tip diameter 400 nm), fabricated by thermally tapering and HF-etching a single mode fiber (SMF), was set pointing at the endface of a hollow-core photonic crystal fiber (HC-PCF) into the field created by the fundamental optical mode emerging from the HC-PCF. At low pressures, the nanospike became unstable and began to self-oscillate for optical powers above a certain threshold, acting like a phonon laser or "phaser". Because the nanospike is robustly connected to the base, direct measurement of the temporal dynamics of the instability is possible. The experiment sheds light on why particles escape from optical traps at low pressures.

  12. Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Karni, O. Mikhelashvili, V.; Eisenstein, G.; Kuchar, K. J.; Capua, A.; Sęk, G.; Misiewicz, J.; Ivanov, V.; Reithmaier, J. P.

    2014-03-24

    We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

  13. 25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Zeghuzi, A. Schmeckebier, H.; Stubenrauch, M.; Bimberg, D.; Meuer, C.; Schubert, C.; Bunge, C.-A.

    2015-05-25

    Error-free generation of 25-Gbit/s differential phase-shift keying (DPSK) signals via direct modulation of InAs quantum-dot (QD) based semiconductor optical amplifiers (SOAs) is experimentally demonstrated with an input power level of −5 dBm. The QD SOAs emit in the 1.3-μm wavelength range and provide a small-signal fiber-to-fiber gain of 8 dB. Furthermore, error-free DPSK modulation is achieved for constant optical input power levels from 3 dBm down to only −11 dBm for a bit rate of 20 Gbit/s. Direct phase modulation of QD SOAs via current changes is thus demonstrated to be much faster than direct gain modulation.

  14. Photonic generation of ultra-wideband doublet pulse using a semiconductor-optical-amplifier based polarization-diversified loop.

    PubMed

    Luo, Bowen; Dong, Jianji; Yu, Yuan; Yang, Ting; Zhang, Xinliang

    2012-06-15

    We propose and demonstrate a novel scheme of ultra-wideband (UWB) doublet pulse generation using a semiconductor optical amplifier (SOA) based polarization-diversified loop (PDL) without any assistant light. In our scheme, the incoming gaussian pulse is split into two parts by the PDL, and each of them is intensity modulated by the other due to cross-gain modulation (XGM) in the SOA. Then, both parts are recombined with incoherent summation to form a UWB doublet pulse. Bi-polar UWB doublet pulse generation is demonstrated using an inverted gaussian pulse injection. Moreover, pulse amplitude modulation of UWB doublet is also experimentally demonstrated. Our scheme shows some advantages, such as simple implementation without assistant light and single optical carrier operation with good fiber dispersion tolerance.

  15. Linear and nonlinear optical response of one-dimensional semiconductors: finite-size and Franz–Keldysh effects

    NASA Astrophysics Data System (ADS)

    Bonabi, Farzad; Pedersen, Thomas G.

    2017-04-01

    The dipole moment formalism for the optical response of finite electronic structures breaks down in infinite ones, for which a momentum-based method is better suited. Focusing on simple chain structures, we compare the linear and nonlinear optical response of finite and infinite one-dimensional semiconductors. This comparison is then extended to cases including strong electro-static fields breaking translational invariance. For large electro-static fields, highly non-perturbative Franz–Keldysh (FK) features are observed in both linear and nonlinear spectra. It is demonstrated that dipole and momentum formalisms agree in the limit of large structures provided the intraband momentum contributions are carefully treated. This convergence is established even in the presence of non-perturbative electro-static fields.

  16. Electronic Structure of Ferromagnetic Semiconductor Ga1-xMnxAs Probed by Subgap Magneto-optical Spectroscopy

    NASA Astrophysics Data System (ADS)

    Acbas, G.; Kim, M.-H.; Cukr, M.; Novák, V.; Scarpulla, M. A.; Dubon, O. D.; Jungwirth, T.; Sinova, Jairo; Cerne, J.

    2009-09-01

    We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. Unlike the unpolarized absorption, the infrared magneto-optical effects we study are intimately related to ferromagnetism, and their interpretation is much more microscopically constrained in terms of the orbital character of the relevant band states. We show that the conventional theory of the disordered valence band with an antiferromatnetic exchange term accounts semiquantitatively for the overall characteristics of the measured infrared magneto-optical spectra.

  17. REVIEW ARTICLE: Harmonically mode-locked semiconductor-based lasers as high repetition rate ultralow noise pulse train and optical frequency comb sources

    NASA Astrophysics Data System (ADS)

    Quinlan, F.; Ozharar, S.; Gee, S.; Delfyett, P. J.

    2009-10-01

    Recent experimental work on semiconductor-based harmonically mode-locked lasers geared toward low noise applications is reviewed. Active, harmonic mode-locking of semiconductor-based lasers has proven to be an excellent way to generate 10 GHz repetition rate pulse trains with pulse-to-pulse timing jitter of only a few femtoseconds without requiring active feedback stabilization. This level of timing jitter is achieved in long fiberized ring cavities and relies upon such factors as low noise rf sources as mode-lockers, high optical power, intracavity dispersion management and intracavity phase modulation. When a high finesse etalon is placed within the optical cavity, semiconductor-based harmonically mode-locked lasers can be used as optical frequency comb sources with 10 GHz mode spacing. When active mode-locking is replaced with regenerative mode-locking, a completely self-contained comb source is created, referenced to the intracavity etalon.

  18. Interface-driven phase separation in multifunctional materials: The case of the ferromagnetic semiconductor GeMn

    NASA Astrophysics Data System (ADS)

    Arras, Emmanuel; Lançon, Frédéric; Slipukhina, Ivetta; Prestat, Éric; Rovezzi, Mauro; Tardif, Samuel; Titov, Andrey; Bayle-Guillemaud, Pascale; D'Acapito, Francesco; Barski, André; Favre-Nicolin, Vincent; Jamet, Matthieu; Cibert, Joël; Pochet, Pascal

    2012-03-01

    We use extensive first-principles simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in oversaturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A class of materials, the α phases, is proposed to understand the formation of the coherent precipitates observed in the GeMn system. The interplay between formation and interface energies is analyzed for these phases and for the structures usually considered in the literature. The existence of the α phases is assessed with both theoretical and experimental arguments.

  19. Nonequilibrium optical properties in semiconductors from first principles: A combined theoretical and experimental study of bulk silicon

    NASA Astrophysics Data System (ADS)

    Sangalli, Davide; Dal Conte, Stefano; Manzoni, Cristian; Cerullo, Giulio; Marini, Andrea

    2016-05-01

    The calculation of the equilibrium optical properties of bulk silicon by using the Bethe-Salpeter equation solved in the Kohn-Sham basis represents a cornerstone in the development of an ab-initio approach to the optical and electronic properties of materials. Nevertheless, calculations of the transient optical spectrum using the same efficient and successful scheme are scarce. We report, here, a joint theoretical and experimental study of the transient reflectivity spectrum of bulk silicon. Femtosecond transient reflectivity is compared to a parameter-free calculation based on the nonequilibrium Bethe-Salpeter equation. By providing an accurate description of the experimental results we disclose the different phenomena that determine the transient optical response of a semiconductor. We give a parameter-free interpretation of concepts such as bleaching, photoinduced absorption, and stimulated emission, beyond the Fermi golden rule. We also introduce the concept of optical gap renormalization, as a generalization of the known mechanism of band gap renormalization. The present scheme successfully describes the case of bulk silicon, showing its universality and accuracy.

  20. Fully first-principles sX-LDA calculations of excited states and optical properties of III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Hyon Rhim, Sung; Kim, Miyoung; Freeman, A. J.

    2004-03-01

    III-V semiconductors are important for their extensive applications as optical devices such as laser diodes and infrared sensors. Optical properties, [ɛ_2(ω), n, k, R, and α], of III-V semiconductors (InAs, InSb, GaSb, and AlSb), are investigated using our highly precise full-potential linearized augmented plane wave(E.Wimmer,H.Krakauer, M.Weinert, A.J.Freeman, PRB,24), 864 (1981)(FLAPW) method with the screened-exchange local density approximation( R.Asahi,W.Mannstadt, A.J.Freeman,PRB,59), 7486 (1999)(sX-LDA) solved self-consistently and with spin-orbit coupling included. The imaginary part of the dielectric constant, ɛ_2(ω) is calculated using the longitudinal expression with full e^iqotr matrix elements, due to the nonlocality of the potential in the sX-LDA method(R.Del Sole, R.Girlanda, PRB 48), 11789 (1993). The structure of the ɛ_2(ω)'s are analyzed with band structures and consideration of interband transitions. The result shows good agreement of the peak positions in ɛ_2(ω) with experiment( D.E.Aspnes,A.A.Studna, PRB 27), 985 (1983) .

  1. Narrow linewidth broadband tunable semiconductor laser at 840 nm with dual acousto-optic tunable configuration for OCT applications

    NASA Astrophysics Data System (ADS)

    Chamorovskiy, Alexander; Shramenko, Mikhail V.; Lobintsov, Andrei A.; Yakubovich, Sergei D.

    2016-03-01

    We demonstrate a tunable narrow linewidth semiconductor laser for the 840 nm spectral range. The laser has a linear cavity comprised of polarization maintaining (PM) fiber. A broadband semiconductor optical amplifier (SOA) in in-line fiber-coupled configuration acts as a gain element. It is based on InGaAs quantum-well (QW) active layer. SOA allows for tuning bandwidth exceeding 25 nm around 840 nm. Small-signal fiber-to-fiber gain of SOA is around 30 dB. A pair of acousto-optic tunable filters (AOTF) with a quasi-collinear interaction of optical and acoustic waves are utilized as spectrally selective elements. AOTF technology benefits in continuous tuning, broadband operation, excellent reproducibility and stability of the signal, as well as a high accuracy of wavelength selectivity due to the absence of mechanically moving components. A single AOTF configuration has typical linewidth in 0.05-0.15 nm range due to a frequency shift obtained during each roundtrip. A sequential AOTF arrangement enables instantaneous linewidth generation of <0.01 nm by compensating for this shift. Linewidth as narrow as 0.0036 nm is observed at 846 nm wavelength using a scanning Fabry-Perot interferometer with 50 MHz spectral resolution. Output power is in the range of 1 mW. While the majority of commercial tunable sources operate in 1060-1550 nm spectral ranges, the 840 nm spectral range is beneficial for optical coherence tomography (OCT). The developed narrow linewidth laser can be relevant for OCT with extended imaging depth, as well as spectroscopy, non-destructive testing and other applications.

  2. Optical Properties of Wurtzite Semiconductors Studied Using Cathodoluminescence Imaging and Spectroscopy

    NASA Astrophysics Data System (ADS)

    Juday, Reid

    The work contained in this dissertation is focused on the optical properties of direct band gap semiconductors which crystallize in a wurtzite structure: more specifically, the III-nitrides and ZnO. By using cathodoluminescence spectroscopy, many of their properties have been investigated, including band gaps, defect energy levels, carrier lifetimes, strain states, exciton binding energies, and effects of electron irradiation on luminescence. Part of this work is focused on p-type Mg-doped GaN and InGaN. These materials are extremely important for the fabrication of visible light emitting diodes and diode lasers and their complex nature is currently not entirely understood. The luminescence of Mg-doped GaN films has been correlated with electrical and structural measurements in order to understand the behavior of hydrogen in the material. Deeply-bound excitons emitting near 3.37 and 3.42 eV are observed in films with a significant hydrogen concentration during cathodoluminescence at liquid helium temperatures. These radiative transitions are unstable during electron irradiation. Our observations suggest a hydrogen-related nature, as opposed to a previous assignment of stacking fault luminescence. The intensity of the 3.37 eV transition can be correlated with the electrical activation of the Mg acceptors. Next, the acceptor energy level of Mg in InGaN is shown to decrease significantly with an increase in the indium composition. This also corresponds to a decrease in the resistivity of these films. In addition, the hole concentration in multiple quantum well light emitting diode structures is much more uniform in the active region when Mg-doped InGaN (instead of Mg-doped GaN) is used. These results will help improve the efficiency of light emitting diodes, especially in the green/yellow color range. Also, the improved hole transport may prove to be important for the development of photovoltaic devices. Cathodoluminescence studies have also been performed on

  3. Demonstration of the feasibility of large-port-count optical switching using a hybrid Mach-Zehnder interferometer-semiconductor optical amplifier switch module in a recirculating loop.

    PubMed

    Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

    2014-09-15

    For what we believe is the first time, the feasibility of large-port-count nanosecond-reconfiguration-time optical switches is demonstrated using a hybrid approach, where Mach-Zehnder interferometric (MZI) switches provide low-loss, high-speed routing with short semiconductor optical amplifiers (SOAs) being integrated to enhance extinction. By repeatedly passing signals through a monolithic hybrid dilated 2×2 switch module in a recirculating loop, the potential performance of high-port-count switches using the hybrid approach is demonstrated. Experimentally, a single pass switch penalty of only 0.1 dB is demonstrated for the 2×2 module, while even after seven passes through the switch, equivalent to a 128×128 router, a penalty of only 2.4 dB is recorded at a data rate of 10 Gb/s.

  4. Models of optical absorption in amorphous semiconductors at the absorption edge — A review and re-evaluation

    NASA Astrophysics Data System (ADS)

    Ibrahim, A.; Al-Ani, S. K. J.

    1994-08-01

    Davis-Mott and Tauc models of optical absorption at the absorption edge in the high absorption coefficient region (104cm-1) are carefully reviewed with regard to their theoretical foundations, assumptions, mathematical derivations, and results. The full implications of these models are exploited, and it is found that the Davis-Mott model for negligible matrix elements between localised states could account for the cubic power law behaviour of with photon energy of some amorphous semiconductors such as a-Si. A fractional power law to find the optical band gapE opt, of the form [αħω ∝ (ħω-E opt)r; 2≤r≤3] based on Davis-Mott model is proposed in which the indexr can be a function of disorder. The Tauc model has further been extended to the case of negligible matrix elements between localised states, in which the same square power law forα vs.ħω with the same meaning of the optical gap as in the original Tauc model has resulted. A consideration of the case of unequal matrix elements for those transitions between localised states and those between extended states is also included. The meaning ofE opt has been re-assessed and it is emphasized that it is an extrapolation of delocalised states to the zero of the density of states rather than a threshold energy for the onset of some kind of optical transitions.

  5. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    SciTech Connect

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  6. Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors with Small Subthreshold Swing Driven by Body-Bias Effect

    NASA Astrophysics Data System (ADS)

    Nishiguchi, Katsuhiko; Fujiwara, Akira

    2012-08-01

    We demonstrate metal-oxide-semiconductor field-effect transistors (MOSFETs) with small subthreshold swing (SS). The MOSFETs have a nanowire channel and three gates. A parasitic bipolar transistor formed in a fully depleted silicon-on-insulator MOSFET applies body bias to the MOSFET's channel and thus reduces the SS. Additionally, triple-gate operation makes the drain voltage smaller and provides current characteristics with a high on/off ratio and small hysteresis. As a result, SSs of the n- and p-type MOSFETs reach 6.6 and 5.2 mV/dec, respectively, in the range of current of six orders of magnitude. These features promise MOSFETs with low power consumption.

  7. Simultaneous monitoring of singlet and triplet exciton variations in solid organic semiconductors driven by an external static magnetic field

    SciTech Connect

    Ding, Baofu Alameh, Kamal

    2014-07-07

    The research field of organic spintronics has remarkably and rapidly become a promising research area for delivering a range of high-performance devices, such as magnetic-field sensors, spin valves, and magnetically modulated organic light emitting devices (OLEDs). Plenty of microscopic physical and chemical models based on exciton or charge interactions have been proposed to explain organic magneto-optoelectronic phenomena. However, the simultaneous observation of singlet- and triplet-exciton variations in an external magnetic field is still unfeasible, preventing a thorough theoretical description of the spin dynamics in organic semiconductors. Here, we show that we can simultaneously observe variations of singlet excitons and triplet excitons in an external magnetic field, by designing an OLED structure employing a singlet-exciton filtering and detection layer in conjunction with a separate triplet-exciton detection layer. This OLED structure enables the observation of a Lorentzian and a non-Lorentzian line-shape magnetoresponse for singlet excitons and triplet excitons, respectively.

  8. Novel monolithic integration scheme for high-speed electroabsorption modulators and semiconductor optical amplifiers using cascaded structure.

    PubMed

    Lin, Fang-Zheng; Wu, Tsu-Hsiu; Chiu, Yi-Jen

    2009-06-08

    A new monolithic integration scheme, namely cascaded-integration (CI), for improving high-speed optical modulation is proposed and demonstrated. High-speed electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs) are taken as the integrated elements of CI. This structure is based on an optical waveguide defined by cascading segmented EAMs with segmented SOAs, while high-impedance transmission lines (HITLs) are used for periodically interconnecting EAMs, forming a distributive optical re-amplification and re-modulation. Therefore, not only the optical modulation can be beneficial from SOA gain, but also high electrical reflection due to EAM low characteristic impedance can be greatly reduced. Two integration schemes, CI and conventional single-section (SS), with same total EAM- and SOA- lengths are fabricated and compared to examine the concept. Same modulation-depth against with EAM bias (up to 5V) as well as SOA injection current (up to 60mA) is found in both structures. In comparison with SS, a < 1dB extra optical-propagation loss in CI is measured due to multi-sections of electrical-isolation regions between EAMs and SOAs, suggesting no significant deterioration in CI on DC optical modulation efficiency. Lower than -12dB of electrical reflection from D.C. to 30GHz is observed in CI, better than -5dB reflection in SS for frequency of above 5GHz. Superior high-speed electrical properties in CI structure can thus lead to higher speed of electrical-to-optical (EO) response, where -3dB bandwidths are >30GHz and 13GHz for CI and SS respectively. Simulation results on electrical and EO response are quite consistent with measurement, confirming that CI can lower the driving power at high-speed regime, while the optical loss is still kept the same level. Taking such distributive advantage (CI) with optical gain, not only higher-speed modulation with high output optical power can be attained, but also the trade-off issue due to impedance mismatch

  9. Quantum coherence induces pulse shape modification in a semiconductor optical amplifier at room temperature

    PubMed Central

    Kolarczik, Mirco; Owschimikow, Nina; Korn, Julian; Lingnau, Benjamin; Kaptan, Yücel; Bimberg, Dieter; Schöll, Eckehard; Lüdge, Kathy; Woggon, Ulrike

    2013-01-01

    Coherence in light–matter interaction is a necessary ingredient if light is used to control the quantum state of a material system. Coherent effects are firmly associated with isolated systems kept at low temperature. The exceedingly fast dephasing in condensed matter environments, in particular at elevated temperatures, may well erase all coherent information in the material at timescales shorter than a laser excitation pulse. Here we show for an ensemble of semiconductor quantum dots that even in the presence of ultrafast dephasing, for suitably designed condensed matter systems quantum-coherent effects are robust enough to be observable at room temperature. Our conclusions are based on an analysis of the reshaping an ultrafast laser pulse undergoes on propagation through a semiconductor quantum dot amplifier. We show that this pulse modification contains the signature of coherent light–matter interaction and can be controlled by adjusting the population of the quantum dots via electrical injection. PMID:24336000

  10. Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor.

    PubMed

    Goodfellow, Kenneth M; Chakraborty, Chitraleema; Beams, Ryan; Novotny, Lukas; Vamivakas, A Nick

    2015-08-12

    The determination to develop fast, efficient devices has led to vast studies on photonic circuits but it is difficult to shrink these circuits below the diffraction limit of light. However, the coupling between surface plasmon polaritons and nanostructures in the near-field shows promise in developing next-generation integrated circuitry. In this work, we demonstrate the potential for integrating nanoplasmonic-based light guides with atomically thin materials for on-chip near-field plasmon detection. Specifically, we show near-field electrical detection of silver nanowire plasmons with the atomically thin semiconductor molybdenum disulfide. Unlike graphene, atomically thin semiconductors such as molybdenum disulfide exhibit a bandgap that lends itself for the excitation and detection of plasmons. Our fully integrated plasmon detector exhibits plasmon responsivities of ∼255 mA/W that corresponds to highly efficient plasmon detection (∼0.5 electrons per plasmon).

  11. Non-blinking semiconductor colloidal quantum dots for biology, optoelectronics and quantum optics.

    PubMed

    Spinicelli, Piernicola; Mahler, Benoit; Buil, Stéphanie; Quélin, Xavier; Dubertret, Benoit; Hermier, Jean-Pierre

    2009-04-14

    Twinkle, twinkle: The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. There are various approaches for obtaining non-blinking nanocrystals, one of which is to grow a thick coat of CdS on the CdSe core (see picture). Applications of this method in the fields of optoelectronic devices, biologic labelling and quantum information processing are discussed.The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. For some years, research on this phenomenon has demonstrated the possibility to progress beyond this problem by suppressing this fluorescence intermittency in various ways. After a brief overview on the microscopic mechanism of blinking, we review the various approaches used to obtain non-blinking nanocrystals and discuss the commitment of this crucial improvement to applications in the fields of optoelectronic devices, biologic labelling and quantum information processing.

  12. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Study of Squeezed Excitons in Polar Semiconductors

    NASA Astrophysics Data System (ADS)

    Yin, Miao; Cheng, Ze; Wu, Zi-Xia; Ping, Yun-Xia

    2009-03-01

    Some properties of excitons in polar semiconductors are studied theoretically by means of squeezed state variational approach. This method makes it possible to consider bilinear terms of the phonon operators as well as linear terms arising from the Lee-Low-Pines (LLP)-like transformation. The exciton ground state energy and binding energy are calculated numerically. It is shown that the squeezing effect is significant in the case of strong exciton-phonon coupling region.

  13. Transport Imaging: Developing an Optical Technique to Characterize Bulk Semiconductor Materials for Next Generation Radiation Detectors

    DTIC Science & Technology

    2009-06-01

    OF PAGES 79 14. SUBJECT TERMS Cathodoluminescence, Diffusion , Drift, Mobility, Lifetime, Bismuth Ferrite , BiFeO3 , Semiconductor, Transport...migrate or diffuse from a region of high concentration to low concentration. The diffusion coefficient (D) quantifies the diffusivity of a material...The diffusion coefficient is found using the Einstein relation kTD e μ = where k is Boltzmann’s constant, T is the temperature, e is the charge

  14. Excited-State Properties of Semiconductor Electrodes and Their Application to Optical Energy Conversion

    DTIC Science & Technology

    1992-01-02

    SUB-GROUP photoluminescence, luminescence, chemical sensors, cadmium sulfide, cadmium selenide 9 ABSTRACT (Continue on reverse of necessary and...Photoluminescent Properties of Cadmium Selenide in the Presence of Amines", G. J. Meyer, G. C. Lisensky, and A. B. Ellis, J. Am. Chem. Soc., 110, 4914 (1988...34Semiconductor-Olefin Adducts. Photoluminescent Properties of Cadmium Sulfide and Cadmium Selenide in tne Presence of Butenes", G. J. Meyer, L. K. Leung, J

  15. Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors

    DTIC Science & Technology

    2014-06-28

    feedback. Presented by C. Masoller 12. Congreso de Fisica Estadistica (FISES), Ourense, Spain, April, 2014. Characterizing the complex dynamics of a...rogue waves in semiconductor lasers. To be presented by J. Zamora Munt 5.3. Poster presentations 1. Congreso de Fisica Estadistica (FISES), Palma de...injection. Presented by M. S. Torre 5. Congreso de Fisica Estadistica (FISES), Ourense, Spain, April, 2014. Unveiling the complex organization of

  16. Pressure-Driven Cooperative Spin-Crossover, Large-Volume Collapse, and Semiconductor-to-Metal Transition in Manganese(II) Honeycomb Lattices.

    PubMed

    Wang, Yonggang; Zhou, Zhengyang; Wen, Ting; Zhou, Yannan; Li, Nana; Han, Fei; Xiao, Yuming; Chow, Paul; Sun, Junliang; Pravica, Michael; Cornelius, Andrew L; Yang, Wenge; Zhao, Yusheng

    2016-12-07

    Spin-crossover (SCO) is generally regarded as a spectacular molecular magnetism in 3d(4)-3d(7) metal complexes and holds great promise for various applications such as memory, displays, and sensors. In particular, SCO materials can be multifunctional when a classical light- or temperature-induced SCO occurs along with other cooperative structural and/or electrical transport alterations. However, such a cooperative SCO has rarely been observed in condensed matter under hydrostatic pressure (an alternative external stimulus to light or temperature), probably due to the lack of synergy between metal neighbors under compression. Here, we report the observation of a pressure-driven, cooperative SCO in the two-dimensional (2D) honeycomb antiferromagnets MnPS3 and MnPSe3 at room temperature. Applying pressure to this confined 2D system leads to a dramatic magnetic moment collapse of Mn(2+) (d(5)) from S = 5/2 to S = 1/2. Significantly, a number of collective phenomena were observed along with the SCO, including a large lattice collapse (∼20% in volume), the formation of metallic bonding, and a semiconductor-to-metal transition. Experimental evidence shows that all of these events occur in the honeycomb lattice, indicating a strongly cooperative mechanism that facilitates the occurrence of the abrupt pressure-driven SCO. We believe that the observation of this cooperative pressure-driven SCO in a 2D system can provide a rare model for theoretical investigations and lead to the discovery of more pressure-responsive multifunctional materials.

  17. Optically driven Archimedes micro-screws for micropump applications: multiple blade design

    NASA Astrophysics Data System (ADS)

    Baldeck, Patrice L.; Lin, Chih-Lang; Lin, Yu-Sheng; Lin, Chin-Te; Chung, Tien-Tung; Bouriau, Michel; Vitrant, Guy

    2011-10-01

    We study the rotation of photo-driven Archimedes screw with multiple blades. The micron-sized Archimedes screws are readily made by the two-photon polymerization technique. Free-floating screws that are trapped by optical tweezers align in the laser irradiation direction, and rotate spontaneously. In this study we demonstrate that the rotation speeds of two-blade-screws is twice the rotation speed of one-blade-screw. However, more complex 3-blade-screws rotate slower than 2-blade-screws due to their limited geometry resolution at this micron scale.

  18. Characterization of laser-driven shock waves in solids using a fiber optic pressure probe

    DOE PAGES

    Cranch, Geoffrey A.; Lunsford, Robert; Grun, Jacob; ...

    2013-11-08

    Measurement of laser-driven shock wave pressure in solid blocks of polymethyl methacrylate is demonstrated using fiber optic pressure probes. Three probes based on a fiber Fabry–Perot, fiber Bragg grating, and interferometric fiber tip sensor are tested and compared. Shock waves are generated using a high-power laser focused onto a thin foil target placed in close proximity to the test blocks. The fiber Fabry–Perot sensor appears capable of resolving the shock front with a rise time of 91 ns. As a result, the peak pressure is estimated, using a separate shadowgraphy measurement, to be 3.4 GPa.

  19. Dynamic modeling of optically pumped electrically driven terahertz quantum cascade lasers

    NASA Astrophysics Data System (ADS)

    Hamadou, A.; Thobel, J.-L.; Lamari, S.

    2017-03-01

    Based on our four-level rate equations model, we analyze through numerical simulations the dynamics of the electron density, population inversion and terahertz intensity present within the cavity of a mid-infrared optically pumped electrically driven THz quantum cascade laser. We find in particular that the mid-infrared pump intensity influences significantly the dynamical behavior of the present device. Moreover, compared to its homologue, the conventional electrically injected THz quantum cascade laser, this system presents much faster dynamics. In addition, within the premises of our model, we derive in the most general case the equation that allows for the determination of the turn-on delay time tth.

  20. Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structures

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Eisenstein, G.

    2016-12-01

    We report a strong negative capacitance effect in back to back combination of a metal-insulator-semiconductor (MIS) structure and a metal-semiconductor junction, which is fabricated on an n type Silicon-on-Insulator substrate. The MIS capacitor comprises a SiO2-HfO2 insulator stack with embedded Pt nanoparticles. The capacitor undergoes a voltage stress process and thereby turns into a varactor and a photodetector. The negative capacitance is observed only under illumination in structures that employ a Schottky back contact. A symmetric double or an asymmetric single negative capacitance peak is observed depending on the nature of illumination. The phenomenon is attributed to the modulation of the semiconductor conductance due to photo generated carriers and their incorporation in trapping/de-trapping processes on interfacial and post filamentation induced defects in the insulator stack. The frequency range of the observed effect is limited to 100 kHz. Large ratios of light to dark and maximum to minimum of negative capacitances as well as of the obtained sensitivity to the applied voltage are, respectively, 105, more than 100, and 10-15. These were measured at 10 kHz under illumination at 365 nm with a power of 2.5 × 10-6 W.