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Sample records for driven semiconductor optical

  1. Spontaneously excited pulses in an optically driven semiconductor laser.

    PubMed

    Wieczorek, Sebastian; Lenstra, Daan

    2004-01-01

    In optically injected semiconductor lasers, intrinsic quantum noise alone, namely, the spontaneous emission and the shot noise, are capable of exciting intensity multipulses from a steady state operation. Noisy lasers exhibit self-pulsations in the locking region of the corresponding deterministic system. The interpulse time statistics are studied in parameter regions near k-homoclinic (Shilnikov) bifurcations where the corresponding deterministic model exhibits single-, double-, and triple-pulse excitability. These statistics differ significantly among each other, and they could be used to characterize regions of different multipulse excitability in a real laser device.

  2. Investigations of a Coherently Driven Semiconductor Optical Cavity QED System

    DTIC Science & Technology

    2008-09-30

    is performed through use of a 980 nm band external cavity tunable diode laser as a pump source Fig. 2a. The pump laser emission is directed into...coherent optical probing with a 1300 nm tunable laser solid lines and optical pumping with a 980 nm pump laser dashed lines. Optical component acronyms...recording the transmitted signal with an InGaAs avalanche photodiode APD. The pump laser is fixed on-resonance with a WGM which typically has a Q limited

  3. Consistency Properties of a Chaotic Semiconductor Laser Driven by Optical Feedback

    NASA Astrophysics Data System (ADS)

    Oliver, Neus; Jüngling, Thomas; Fischer, Ingo

    2015-03-01

    We experimentally study consistency properties of a semiconductor laser in response to a coherent optical drive originating from delayed feedback. The laser is connected to a short and a long optical fiber loop, switched such that only one is providing input to the laser at a time. This way, repeating the exact same optical drive twice, we find consistent or inconsistent responses depending on the pump parameter and we relate the kind of response to strong and weak chaos. Moreover, we are able to experimentally determine the sub-Lyapunov exponent, underlying the consistency properties.

  4. Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

    PubMed

    Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

    2012-09-01

    In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

  5. On the output characteristics of a semiconductor optical amplifier driven by an ultrafast optical time division multiplexing pulse train

    NASA Astrophysics Data System (ADS)

    Zoiros, K. E.; Chasioti, R.; Koukourlis, C. S.; Houbavlis, T.

    2007-03-01

    A comprehensive theoretical analysis of a semiconductor optical amplifier (SOA) that is subject to an ultrafast optical time division multiplexing pulse stream is presented with the help of a simple but efficient model developed for this purpose. The model combines the necessary set of mathematical equations with the appropriate simplifying assumptions to describe in the time domain gain saturation and recovery for the case of multiple incoming pulses. In this manner, analytical expressions can be obtained for the power and chirp profile of the amplified pulses, essentially extending the work that has been performed for a single pulse only. This allows to identify the critical operational parameters and to investigate and evaluate their effect on these two output characteristics. The derived simulation curves are thoroughly studied to specify the limitations imposed on the SOA small signal gain and carrier lifetime as well as on the full-width at half-maximum (FWHM) and energy of the input pulses and, based on a series of logical arguments, to extract useful rules concerning their selection so as to achieve improved performance with respect to the practical applications of all-optical switching and pulse compression. The obtained results indicate that due to the continuous insertion of pulses, the requirements for the SOA small signal gain and the input pulse energy are stringent than those for the case of isolated pulse amplification. The combination of these two parameters determines also the regime in which the amplifier must be biased to operate in order to ensure distortionless pulse amplification and enhanced chirp for efficient pulse compression and it has been found that low saturation is necessary for the former case whilst heavy saturation for the latter. The scopes of the corresponding requirements for the carrier lifetime and the FWHM are also tight but to a less extent and can be simply satisfied with the available photonics technology. These results

  6. Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors.

    PubMed

    Romeira, Bruno; Javaloyes, Julien; Ironside, Charles N; Figueiredo, José M L; Balle, Salvador; Piro, Oreste

    2013-09-09

    We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics.

  7. 2 Gbit/s 0.5 μm complementary metal-oxide semiconductor optical transceiver with event-driven dynamic power-on capability

    NASA Astrophysics Data System (ADS)

    Wang, Xingle; Kiamilev, Fouad; Gui, Ping; Wang, Xiaoqing; Ekman, Jeremy; Zuo, Yongrong; Blankenberg, Jason; Haney, Michael

    2006-06-01

    A 2 Gb/s0.5 μm complementary metal-oxide semiconductor optical transceiver designed for board- or backplane level power-efficient interconnections is presented. The transceiver supports optical wake-on-link (OWL), an event-driven dynamic power-on technique. Depending on external events, the transceiver resides in either the active mode or the sleep mode and switches accordingly. The active-to-sleep transition shuts off the normal, gigabit link and turns on dedicated circuits to establish a low-power (~1.8 mW), low data rate (less than 100 Mbits/s) link. In contrast the normal, gigabit link consumes over 100 mW. Similarly the sleep-to-active transition shuts off the low-power link and turns on the normal, gigabit link. The low-power link, sharing the same optical channel with the normal, gigabit link, is used to achieve transmitter/receiver pair power-on synchronization and greatly reduces the power consumption of the transceiver. A free-space optical platform was built to evaluate the transceiver performance. The experiment successfully demonstrated the event-driven dynamic power-on operation. To our knowledge, this is the first time a dynamic power-on scheme has been implemented for optical interconnects. The areas of the circuits that implement the low-power link are approximately one-tenth of the areas of the gigabit link circuits.

  8. Enhanced infrared magneto-optical response of the nonmagnetic semiconductor BiTeI driven by bulk Rashba splitting.

    PubMed

    Demkó, L; Schober, G A H; Kocsis, V; Bahramy, M S; Murakawa, H; Lee, J S; Kézsmárki, I; Arita, R; Nagaosa, N; Tokura, Y

    2012-10-19

    We study the magneto-optical (MO) response of the polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3 T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  9. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  10. Nonlinear Optical Interactions in Semiconductors

    DTIC Science & Technology

    1984-03-16

    optical pumping in semiconductors to generate IR radiation and a variety of studies involving narrow gap semiconducting compounds outlined in our proposal... radiation and a variety of studies involving narrow gap semiconducting compounds outlined in our proposal. We have studied the feasibility of room...processes we are studying, or plan to study, are the following: A. Multiphoton optical pumping in semiconductors to generate IR radiation , e.g

  11. Nonlinear Optical Interactions in Semiconductors

    DTIC Science & Technology

    1984-10-01

    careful study of multiphoton optical pumping in semiconductors to generate IR radiation and a variety of studies involving narrow-gap semiconducting...This will allow us to undertake a i-arefa: . dy of multiphoton optical pumping in semiconductors to generate IR radiation and a variety of studies...to generate IR radiation , e.g., narrow-gap semiconducting compounds such as Hg!_xCdxTe. B. Generation of high-power coherent infrared (21 with

  12. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  13. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  14. Optical properties of semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Son, Joong-Kon

    Thanks to the difference in energy gap between two semiconductors and to their different indices of refraction, semiconductor heterostructures can confine electrons as well as photons. This property makes it possible to build semiconductor-based optical resonators (microcavities) with a radiation dipole (a quantum well) in its midst to investigate the coupling between the optical modes of the microcavity with the exciton modes of the quantum well. Such an interaction, besides its intrinsic interest, is relevant to vertically-emitting semiconductor lasers, based on the quantum well- microcavity system. In this thesis, we will present experimental evidence of temperature and electric-field dependent exciton-cavity coupling in GaAs-GaAlAs microcavities.

  15. Optical recording in hydrogenated semiconductors

    NASA Astrophysics Data System (ADS)

    Bosch, M. A.

    1982-01-01

    Optical information recording and storage is investigated in hydrogenated amorphous semiconductor films. The recording mechanisms are based on the evolution of hydrogen within the active layer. Three different processes are observed: (1) bulge (or bubble) formation, (2) spongelike microswelling, and (3) ablation without melting.

  16. Optical Processing With Photorefractive Semiconductors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory

    1989-01-01

    Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

  17. Optical Processing With Photorefractive Semiconductors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory

    1989-01-01

    Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

  18. Optic probe for semiconductor characterization

    DOEpatents

    Sopori, Bhushan L [Denver, CO; Hambarian, Artak [Yerevan, AM

    2008-09-02

    Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

  19. Electrically driven optical antennas

    NASA Astrophysics Data System (ADS)

    Kern, Johannes; Kullock, René; Prangsma, Jord; Emmerling, Monika; Kamp, Martin; Hecht, Bert

    2015-09-01

    Unlike radiowave antennas, so far optical nanoantennas cannot be fed by electrical generators. Instead, they are driven by light or indirectly via excited discrete states in active materials in their vicinity. Here we demonstrate the direct electrical driving of an in-plane optical antenna by the broadband quantum-shot noise of electrons tunnelling across its feed gap. The spectrum of the emitted photons is determined by the antenna geometry and can be tuned via the applied voltage. Moreover, the direction and polarization of the light emission are controlled by the antenna resonance, which also improves the external quantum efficiency by up to two orders of magnitude. The one-material planar design offers facile integration of electrical and optical circuits and thus represents a new paradigm for interfacing electrons and photons at the nanometre scale, for example for on-chip wireless communication and highly configurable electrically driven subwavelength photon sources.

  20. Integrated Semiconductor/Optical Information Processors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen

    1989-01-01

    Optical information processors made of integrated three-dimensional devices which include optical, electro-optical, and electronic devices. Integration achieved by combination and extension of advanced semiconductor (integrated-circuit) and integrated-optics technology. In integrated device, spatial light modulator fabricated on surface of chip. Leads to miniaturization of sophisticated optical information-processing systems.

  1. Optically driven nanotube actuators

    NASA Astrophysics Data System (ADS)

    Lu, Shaoxin; Panchapakesan, Balaji

    2005-11-01

    Optically driven actuators have been fabricated from single-wall carbon nanotube-polymer composite sheets. Like natural muscles, the millimetre-scale actuators are assemblies of millions of individual nanotube actuators processed into macroscopic length scales and bonded to an acrylic elastomer sheet to form an actuator that have been shown to generate higher stress than natural muscles and higher strains than high-modulus piezoelectric materials. Strain measurements revealed 0.01%-0.3% elastic strain generated due to electrostatic and thermal effects under visible light intensities of 5-120 mW cm-2. An optically actuated nanotube gripper is demonstrated to show manipulation of small objects. This actuation technology overcomes some of the fundamental limitations such as the use of high voltages or electrochemical solutions for actuation, opening up possibilities for remote light-induced actuation technologies.

  2. Optical isolator for semiconductor lasers.

    PubMed

    Kuwahara, H

    1980-01-15

    An optical isolator for semiconductor lasers, consisting of a polarizer and a quarterwave plate, was investigated experimentally. It was assembled in a compact laser-to-fiber coupling module. Experiment showed forward loss of 1.15 dB, backward loss of 24.8 dB, and rotative tolerance of 2.4 deg for 1 dB down. The length of the module is 43.2 mm. The coupling efficiency to a graded-index multimode fiber is 37.5%. The extinction ratio is improved by 6.75 dB. The suppression effect on the influence of reflected light was investigated, using the assembled module.

  3. Optical cavity furnace for semiconductor wafer processing

    DOEpatents

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  4. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  5. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1996-08-20

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  6. Engineering optical properties of semiconductor metafilm superabsorbers

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2016-04-01

    Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials' properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.

  7. Optical processing for semiconductor device fabrication

    NASA Technical Reports Server (NTRS)

    Sopori, Bhushan L.

    1994-01-01

    A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

  8. Integrated optics approach for advanced semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Suematsu, Yasuharu; Arai, Shigehisa

    1987-11-01

    Recent advances in the field of semiconductor integrated optics are reviewed from the point of view of monolithic integration of semiconductor lasers and other optical components and/or devices. Emphasis is placed on dynamic-single-mode (DSM) lasers, such as DFB and DBR lasers, intended for highly stable single-wavelength light sources for such monolithic integration. The realization of high-performance DSM lasers and the fabrication techniques of monolithically integrated optical devices and circuits are briefly reviewed. A variety of potential applications is discussed.

  9. Optical Properties of Non-Crystalline Semiconductors.

    DTIC Science & Technology

    1984-01-01

    Instruments, 1974, unpublished. 42. de Neufville, J.P., Photostructural transformations in amorphous solids, 0 in Optical Properties of Solids --New...semiconductors, in Optical Properties of Solids , Nudelman, S., and Mitra, S.S., eds., Plenum, N.Y., 1969, 123. 52. Cody, G.D., Brooks, B.G., and

  10. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1994-01-01

    Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

  11. Investigation of semiconductor clad optical waveguides

    NASA Technical Reports Server (NTRS)

    Batchman, T. E.; Carson, R. F.

    1985-01-01

    A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

  12. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1998-06-30

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  13. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1998-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  14. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  15. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1995-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  16. Templated Chemically Deposited Semiconductor Optical Fiber Materials

    NASA Astrophysics Data System (ADS)

    Sparks, Justin R.; Sazio, Pier J. A.; Gopalan, Venkatraman; Badding, John V.

    2013-07-01

    Chemical deposition is a powerful technology for fabrication of planar microelectronics. Optical fibers are the dominant platform for telecommunications, and devices such as fiber lasers are forming the basis for new industries. High-pressure chemical vapor deposition (HPCVD) allows for conformal layers and void-free wires of precisely doped crystalline unary and compound semiconductors inside the micro-to-nanoscale-diameter pores of microstructured optical fibers (MOFs). Drawing the fibers to serve as templates into which these semiconductor structures can be fabricated allows for geometric design flexibility that is difficult to achieve with planar fabrication. Seamless coupling of semiconductor optoelectronic and photonic devices with existing fiber infrastructure thus becomes possible, facilitating all-fiber technological approaches. The deposition techniques also allow for a wider range of semiconductor materials compositions to be exploited than is possible by means of preform drawing. Gigahertz bandwidth junction-based fiber devices can be fabricated from doped crystalline semiconductors, for example. Deposition of amorphous hydrogenated silicon, which cannot be drawn, allows for the exploitation of strong nonlinear optical function in fibers. Finally, crystalline compound semiconductor fiber cores hold promise for high-power infrared light-guiding fiber devices and subwavelength-resolution, large-area infrared imaging.

  17. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  18. Driven optical matter (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Figliozzi, Patrick; Sule, Nishant; Yan, Zijie; Vaikuntanathan, Suriyanarayanan; Rice, Stuart A.; Scherer, Norbert F.

    2016-09-01

    Optical trapping has enabled studying a wide variety of questions and systems in chemistry, biology, physics, and materials science. For example, optical trapping has been used to understand hydrodynamic interactions in dilute and dense colloidal fluids and discover connections to granular materials. In this presentation we show that shaped optical fields and gradients can be used to study the electrodynamic interactions amongst nanoparticles (NPs) and drive them into new ordered states. We demonstrate the formation and use of NP-based optical matter to study a range of nonequilibrium phenomena in solution; field-driven barrier crossing phenomena and noise-driven ordering. Optical matter, a material that forms only in the presence of an optical field, involves NP interactions by optical scattering and interference. Metal NPs can be formed into regular arrangements in minimally shaped fields; e.g., in focused Gaussian beams, line traps, and optical ring traps. Inter-particle interactions and motions are also affected when the optical matter is driven. Particles recirculate in an optical ring vortex trap allowing long term measurements to examine rare events. In particular, particles can hop between optical binding sites, move past electrodynamic obstacles or pass each other while moving around the ring. The polarization state of the optical beam can be used to produce periodic variations of the NP electrodynamic interactions. As particles circulate this "noise" causes NP clusters to be less stable as if the temperature of the system is increased. Conversely, we observe noise-driven ordering in dense systems. We will explain these phenomena using simulations and theory.

  19. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  20. Stable spatial solitons in semiconductor optical amplifiers.

    PubMed

    Ultanir, E A; Michaelis, D; Lederer, F; Stegeman, G I

    2003-02-15

    The existence of stable dissipative spatial solitons at low intensities in patterned electrode semiconductor optical amplifiers (SOAs) is predicted theoretically. In contrast to conventional SOAs, this system may support stable solitons because the inherent saturating losses provide subcritical bifurcations for both the plane-wave and the soliton solution.

  1. Stable dissipative solitons in semiconductor optical amplifiers.

    PubMed

    Ultanir, Erdem A; Stegeman, George I; Michaelis, Dirk; Lange, Christoph H; Lederer, Falk

    2003-06-27

    We have observed for the first time stable spatial solitons in semiconductor optical amplifiers. Soliton destabilization due to the growth of background noise was suppressed by using patterned electrodes on the device. Numerical simulations fit very well with the experiment results. We show that it is possible to excite these solitons with about 60 mW input power.

  2. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  3. Electrically driven optical metamaterials.

    PubMed

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-06-22

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors.

  4. Electrically driven optical metamaterials

    NASA Astrophysics Data System (ADS)

    Le-van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-06-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors.

  5. Electrically driven optical metamaterials

    PubMed Central

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-01-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors. PMID:27328976

  6. Third order mode optically pumped semiconductor laser

    NASA Astrophysics Data System (ADS)

    De Rossi, A.; Semaltianos, N.; Chirlias, E.; Vinter, B.; Ortiz, V.; Berger, V.

    2002-06-01

    Lasing action on a third order waveguide mode is demonstrated at room temperature under optical pumping, in a specifically designed quantum well laser structure. The AlGaAs heterostructure involves barriers which ensure that the third order waveguide mode has a higher overlap with the single quantum well emitter than the fundamental mode. Third order mode operation of a laser structure opens the way to modal phase matched parametric down conversion inside the semiconductor laser itself. It is a first step towards the realization of semiconductor twin photon laser sources, needed for quantum information experiments.

  7. Subwavelength metal-optic semiconductor nanopatch lasers.

    PubMed

    Yu, Kyoungsik; Lakhani, Amit; Wu, Ming C

    2010-04-26

    We report on near infrared semiconductor nanopatch lasers with subwavelength-scale physical dimensions (0.019 cubic wavelengths) and effective mode volumes (0.0017 cubic wavelengths). We observe lasing in the two most fundamental optical modes which resemble oscillating electrical and magnetic dipoles. The ultra-small laser volume is achieved with the presence of nanoscale metal patches which suppress electromagnetic radiation into free-space and convert a leaky cavity into a highly-confined subwavelength optical resonator. Such ultra-small lasers with metallodielectric cavities will enable broad applications in data storage, biological sensing, and on-chip optical communication.

  8. Optical Biosensors Based on Semiconductor Nanostructures

    PubMed Central

    Martín-Palma, Raúl J.; Manso, Miguel; Torres-Costa, Vicente

    2009-01-01

    The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented. PMID:22346691

  9. Semiconductor nanowire optical antenna solar absorbers.

    PubMed

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L

    2010-02-10

    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology.

  10. Nonlinear Optical Interactions in Semiconductors

    DTIC Science & Technology

    1985-02-09

    proposed in Part F of our research proposal. Finally,* an experiment involving four -photon mixing to probe electron dynamics in the Gunn effect regime...Finally, an experiment involving four -photon mixing to probe electron dynamics in the Gunn effect regime in GaAIAs and HgCdTe superlattice, utilizing...a dielectric constant modulation which then gives rise to four -photon mixing. Our attempts are focused on observing a number of new optical effects

  11. Optical injection in semiconductor ring lasers

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Beri, S.; Sande, G. Van Der; Gelens, L.; Danckaert, J.

    2010-03-01

    We theoretically investigate optical injection in semiconductor ring lasers and disclose several dynamical regimes. Through numerical simulations and bifurcation continuation, two separate parameter regions in which two different injection-locked solutions coexist are revealed, in addition to a region in which a frequency-locked limit cycle coexists with an injection-locked solution. Finally, an antiphase chaotic regime without the involvement of any carrier dynamics is revealed. Parallels are drawn with the onset of chaos in the periodically forced Duffing oscillator.

  12. Semiconductor ring lasers as optical neurons

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Gelens, L.; Mashal, L.; Beri, S.; Van der Sande, G.; Danckaert, J.; Verschaffelt, G.

    2012-06-01

    Semiconductor Ring Lasers (SRLs) are a modern class of semiconductor lasers whose active cavity is characterized by a circular geometry. This enables the laser to support two counterpropagating modes, referred to as the clockwise (CW) and the counterclockwise (CCW) mode. Semiconductor ring lasers have been shown to have a regime of operation in which they are excitable, when the linear coupling between the counterpropagating modes is asymmetric. This can be achieved by increasing the reflection of, for example, the CW mode into the CCW mode. This will stabilize lasing in the CCW mode. In the excitable regime, the SRL will fire optical pulses (spikes) in the CW mode as a response to noise perturbations. In this contribution we experimentally and theoretically characterize these spikes. Our experiments reveal a statistical distribution of the characteristics of the optical pulses that is not observed in regular excitable systems. In particular, an inverse correlation exists between the pulse amplitude and duration. Numerical simulations and an interpretation in an asymptotic phase space confirm and explain these experimentally observed pulse characteristics [L. Gelens et al., Phys. Rev. A 82 063841, 2010]. We will also theoretically consider asymmetric SRLs coupled through a single bus waveguide. This is a first step towards an integrated optical neural network using semiconductor ring lasers as building blocks. We will show that for weak coupling, excitatory excursions still persist due to the similar phase space structure. Moreover, the coupled SRLs can excite pulses in each other and can thus function as communicating neurons [W. Coomans et al., Phys. Rev. E 84 036209, 2011]. This type of neural network can be fully integrated on chip and does not suffer from the drawback of needing extra-cavity measures, such as optical injection or saturable absorbers.

  13. Toward a photoconducting semiconductor RF optical fiber antenna array.

    PubMed

    Davis, R; Rice, R; Ballato, A; Hawkins, T; Foy, P; Ballato, J

    2010-09-20

    Recently, optical fibers comprising a crystalline semiconductor core in a silica cladding have been successfully drawn by a conventional drawing process. These fibers are expected to exhibit a photoconductive response when illuminated by photons more energetic than the band gap of the core. In the photoconducting state, such a fiber can be expected to support driven RF currents so as to function as an antenna element, much as a plasma antenna. In this paper, we report the first device-related results on a crystalline semiconductor core optical fiber potentially useful in a photoconducting optical fiber antenna array; namely, optically induced changes to the electrical conductivity of a glass-clad germanium-core optical fiber. Since DC photoconduction measurements were masked by a photovoltaic effect, RF measurements at 5 MHz were used to determine the magnitude of the induced photoconductive effect. The observed photoconductivity, though not large in the present experiment, was comparable to that measured for the bulk crystals from which the fibers were drawn. The absorbed pumping light generated photo-carriers, thereby transforming the core from a dielectric material to a conductor. This technology could thus enable a class of transient antenna elements useful in low observable and reconfigurable antenna array applications.

  14. Dynamics of optically-injected semiconductor nanolasers

    NASA Astrophysics Data System (ADS)

    Sarraute, J.-M.; Schires, K.; LaRochelle, S.; Grillot, F.

    2016-03-01

    We propose a novel rate equation model of an optically-injected semiconductor nanolaser based on an expression of the complex electric field including a novel spontaneous emission term. The latter takes into account the amplification of the zero-point energy of the field as well as the Purcell effect. The modulation response of the optically injection-locked nanolaser is studied for the first time using a small-signal analysis of the model. We then investigate the injection map of the nanolaser and study the 3-dB bandwidth of the nanolaser inside the locking region.

  15. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  16. Optically pumped nuclear magnetic resonance of semiconductors.

    PubMed

    Hayes, Sophia E; Mui, Stacy; Ramaswamy, Kannan

    2008-02-07

    Optically pumped NMR (OPNMR) of direct gap and indirect gap semiconductors has been an area of active research interest, motivated by both basic science and technological perspectives. Proposals to enhance and to spatially localize nuclear polarization have stimulated interest in this area. Recent progress in OPNMR has focused on exploring the experimental parameter space in order to elucidate details of the underlying photophysics of optical pumping phenomena. The focus of this review is on recent studies of bulk samples of GaAs and InP, namely, the photon energy dependence, the magnetic field dependence, and the phase dependence of OPNMR resonances. Models for the development of nuclear polarization are discussed.

  17. Optical investigations of noncrystalline semiconductors. [considering silicon and boron films

    NASA Technical Reports Server (NTRS)

    Blum, N. A.; Feldman, C.; Moorjani, K.

    1973-01-01

    Three areas of investigation into the properties of amorphous silicon and boron are reported: (1) optical properties of elemental amorphous semiconductors; (2) Mossbauer studies of disordered systems; and (3) theoretical aspects of disordered semiconductors.

  18. Optical Studies of Semiconductor Quantum Dots

    NASA Astrophysics Data System (ADS)

    Yükselici, H.; Allahverdi, Ç.; Aşıkoğlu, A.; Ünlü, H.; Baysal, A.; Çulha, M.; İnce, R.; İnce, A.; Feeney, M.; Athalin, H.

    Optical absorption (ABS), steady-state photoluminescence (PL), resonant Raman, and photoabsorption (PA) spectroscopies are employed to study quantum-size effects in II-VI semiconductor quantum dots (QDs) grown in glass samples. We observe a size-dependent shift in the energetic position of the first exciton peak and have examined the photoinduced evolution of the differential absorption spectra. The Raman shifts of the phonon modes are employed to monitor stoichiometric changes in the composition of the QDs during growth. Two sets of glass samples were prepared from color filters doped with CdS x Se1 - x and Zn x Cd1 - x Te. We analyze the optical properties of QDs through the ABS, PL, resonant Raman, and PA spectroscopies. The glass samples were prepared from commercially available semiconductor doped filters by a two-step thermal treatment. The average size of QDs is estimated from the energetic position of the first exciton peak in the ABS spectrum. A calculation based on a quantized-state effective mass model in the strong confinement regime predicts that the average radius of QDs in the glass samples ranges from 2.9 to 4.9 nm for CdTe and from 2.2 to 9.3 nm for CdS0. 08Se0. 92. We have also studied the nonlinear optical properties of QDs by reviewing the results of size-dependent photoinduced modulations in the first exciton band of CdTe QDs studied by PA spectroscopy.

  19. Glass-clad semiconductor core optical fibers

    NASA Astrophysics Data System (ADS)

    Morris, Stephanie Lynn

    Glass-clad optical fibers comprising a crystalline semiconductor core have garnered considerable recent attention for their potential utility as novel waveguides for applications in nonlinear optics, sensing, power delivery, and biomedicine. As research into these fibers has progressed, it has become evident that excessive losses are limiting performance and so greater understanding of the underlying materials science, coupled with advances in fiber processing, is needed. More specifically, the semiconductor core fibers possess three performance-limiting characteristics that need to be addressed: (a) thermal expansion mismatches between crystalline core and glass cladding that lead to cracks, (b) the precipitation of oxide species in the core upon fiber cooling, which results from partial dissolution of the cladding glass by the core melt, and (c) polycrystallinity; all of which lead to scattering and increased transmission losses. This dissertation systematically studies each of these effects and develops both a fundamental scientific understanding of and practical engineering methods for reducing their impact. With respect to the thermal expansion mismatch and, in part, the dissolution of oxides, for the first time to our knowledge, oxide and non-oxide glass compositions are developed for a series of semiconductor cores based on two main design criteria: (1) matching the thermal expansion coefficient between semiconductor core and glass cladding to minimize cracking and (2) matching the viscosity-temperature dependences, such that the cladding glass draws into fiber at a temperature slightly above the melting point of the semiconductor in order to minimize dissolution and improve the fiber draw process. The x[Na 2O:Al2O3] + (100 - 2x)SiO2 glass compositional family was selected due to the ability to tailor the glass properties to match the aforementioned targets through slight variations in composition and adjusting the ratios of bridging and non-bridging oxygen

  20. Optical complexity in external cavity semiconductor laser

    NASA Astrophysics Data System (ADS)

    Rondoni, Lamberto; Ariffin, M. R. K.; Varatharajoo, Renuganth; Mukherjee, Sayan; Palit, Sanjay K.; Banerjee, Santo

    2017-03-01

    In this article, the window based complexity and output modulation of a time delayed chaotic semiconductor laser (SL) model has been investigated. The window based optical complexity (OC), is measured by introducing the recurrence sample entropy (SampEn). The analysis has been done without and in the presence of external noise. The significant changes in the dynamics can be observed under induced noise with weak strength. It has also been found that there is a strong positive correlation between the output power and the complexity of the system with various sets of parameters. The laser intensity, as well as the OC can be increased with the incremental noise strength and the associated system parameters. Thus, optical complexity quantifies the system dynamics and its instabilities, since is strongly correlated with the laser outputs. This analysis can be applied to measure the laser instabilities and modulation of output power.

  1. Optical dephasing in semiconductor mixed crystals

    NASA Astrophysics Data System (ADS)

    Siegner, U.; Weber, D.; Göbel, E. O.; Bennhardt, D.; Heuckeroth, V.; Saleh, R.; Baranovskii, S. D.; Thomas, P.; Schwab, H.; Klingshirn, C.; Hvam, J. M.; Lyssenko, V. G.

    1992-08-01

    The influence of disorder and localization on optical dephasing of excitons in the semiconductor mixed crystals CdS1-xSex and AlxGa1-xAs has been investigated by means of time-resolved four-wave mixing and photon echo experiments. A dephasing time of several hundreds of picoseconds is found for resonantly excited localized excitons in CdS1-xSex while the dephasing time in AlxGa1-xAs amounts to only a few picoseconds. In CdS1-xSex dephasing results mainly from hopping processes, i.e., exciton-phonon interaction. The contribution of disorder is negligible in terms of phase relaxation in CdS1-xSex. In contrast, in AlxGa1-xAs elastic disorder scattering yields an essential contribution to the dephasing rate. We present a theoretical model, which treats dephasing of optical excitations in a disordered semiconductor, including the influence of disorder as well as exciton-phonon interaction. On the base of this model, the experimentally observed differences in the dephasing behavior of excitons in CdS1-xSex and AlxGa1-xAs are related to the microscopic structure of the disorder potential and the mechanism of exciton localization.

  2. A Low-Noise Semiconductor Optical Amplifier

    SciTech Connect

    Ratowsky, R.P.; Dijaili, S.; Kallman, J.S.; Feit, M.D.; Walker, J.

    1999-03-23

    Optical amplifiers are essential devices for optical networks, optical systems, and computer communications. These amplifiers compensate for the inevitable optical loss in long-distance propagation (>50 km) or splitting (>10x). Fiber amplifiers such as the erbium-doped fiber amplifier have revolutionized the fiber-optics industry and are enjoying widespread use. Semiconductor optical amplifiers (SOAs) are an alternative technology that complements the fiber amplifiers in cost and performance. One obstacle to the widespread use of SOAs is the severity of the inevitable noise output resulting from amplified spontaneous emission (ASE). Spectral filtering is often used to reduce ASE noise, but this constrains the source spectrally, and improvement is typically limited to about 10 dB. The extra components also add cost and complexity to the final assembly. The goal of this project was to analyze, design, and take significant steps toward the realization of an innovative, low-noise SOA based on the concept of ''distributed spatial filtering'' (DSF). In DSF, we alternate active SOA segments with passive free-space diffraction regions. Since spontaneous emission radiates equally in all directions, the free-space region lengthens the amplifier for a given length of gain region, narrowing the solid angle into which the spontaneous emission is amplified [1,2]. Our innovation is to use spatial filtering in a differential manner across many segments, thereby enhancing the effect when wave-optical effects are included [3]. The structure quickly and effectively strips the ASE into the higher-order modes, quenching the ASE gain relative to the signal.

  3. Optical Antenna Enhanced Spontaneous Emission in Semiconductors

    NASA Astrophysics Data System (ADS)

    Messer, Kevin James

    Optical antennas can be used to dramatically increase the rate that semiconductors spontaneously emit photons. While traditional LEDs are limited in bandwidth due to the "slow" rate of spontaneous emission, antenna-enhanced LEDs have the potential to be a fast, efficient, nanoscale light emitter. Traditionally, lasers have dominated LEDs as the emitter in optical interconnects due to a 200x speed advantage of stimulated emission over spontaneous emission. This paradigm may be reversed by coupling LEDs to optical antennas. In fact, antenna enhanced spontaneous emission can be faster than the fastest stimulated emission. Spontaneous emission originates from dipole fluctuations within the emitting material. The size of these fluctuations is much less than the wavelength of light emission, which leads to slow spontaneous emission. Coupling the material to an optical antenna corrects the size mismatch and improves the rate of radiation. An optical antenna circuit model is developed to predict the degree to which spontaneous emission can be enhanced. The circuit model presented in this dissertation shows that enhancement over 1000x is possible while still maintaining greater than 50% efficiency. The circuit model provides insight how to design optical antennas for coupling to dipole sources, for maximum enhancement, and for high efficiency. A method for incorporating the anomalous skin effect, often overlooked in metal optics, is provided. While FDTD/FEM simulations cannot include this effect due to its nonlocal nature, its impact can be examined through the use of the optical antenna circuit model. Analysis of the tradeoff between achieving large spontaneous emission enhancement and maintaining high efficiency leads to an ideal antenna feedgap size of 10nm. Experimental demonstration of spontaneous emission enhancement from InP coupled to an arch-dipole antenna is presented. Photoluminescence measurements show light emission from antenna-coupled InP over bare InP ridges

  4. Optical correlators with fast updating speed using photorefractive semiconductor materials

    NASA Technical Reports Server (NTRS)

    Gheen, Gregory; Cheng, Li-Jen

    1988-01-01

    The performance of an updatable optical correlator which uses a photorefractive semiconductor to generate real-time matched filters is discussed. The application of compound semiconductors makes possible high-speed operation and low optical input intensities. The Bragg diffraction is considered, along with the speed and power characteristics of these materials. Experimental results on photorefractive GaAs are presented.

  5. Optical and transport studies of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Shen, Shaoping

    In this thesis, various studies of magneto-transport and magneto-optical effects in III-V and II-V magnetic semiconductors are presented. The magneo-transport study involved the investigation of the anomalous Hall effect (AHE) in (Ga,Mn)As epilayers with low Mn concentration, grown in ultra-high vacuum molecular beam epitaxy (UHV MBE) chamber. Experiments were carried out in National High Magnetic Field Laboratory (NHMFL) on a series of samples with same Mn concentrations (x = 1.4%) but with various Be co-doping levels. We observed a sublinear relationship between the transverse resistivity rhoxy and the longitudinal resistivity rhoxx with a scaling factor n = 0.5, which has not been predicted theoretically. We also investigated the magneto-optical and magnetic properties of two quaternary diluted magnetic semiconductor (DMS) alloys, Cd1- x-yMnxCryTe and Cd1-x-yMnxCo yTe grown by the vertical Bridgman method, with a fixed Mn concentration x ˜ 0.37 and, respectively, with concentrations of Cr in the range 0 < y < 0.07 and Co in the range 0 < y < 0.009. The introduction of Cr and Co leads to very different behaviors, including the occurrence of ferromagnetic order in the case of Cd1-x-yMn xCryTe and several interesting optical transitions for Cd1-x-yMn xCoyTe. We discuss the possible origins of these observed behaviors. Last, we focused on DMS based nano-structures. Magnetic circular dichroism (MCD) studies have been carried out on a series of 1.4 nm thick CdSe:Mn nano-ribbons synthesized via colloidal chemical route. MCD spectra have been used for investigating the Zeeman splitting in these one-dimensional (1D) quantum confined diluted magnetic semiconductor nanostructures. In all samples, a strong MCD signal was found at about 2.9 eV due to a large Zeeman splitting of the exciton confined in the nano-ribbon. The Zeeman splitting is a result of strong sp-d exchange interaction between the electronic holes of the nano-ribbons and localized magnetic moment of Mn2

  6. Optical injection of spin currents in semiconductors

    NASA Astrophysics Data System (ADS)

    Bhat, Ravi D. R.; Sipe, John E.

    2000-03-01

    We propose a scheme in which electron spin currents can be optically injected in an unbiased bulk semiconductor. It relies on the interference between one- and two-photon absorption from a beam and its phase-related second harmonic. Previously, this interference has been shown to lead to an electron current that can be controlled by the relative phase of the two co-linearly polarized beams [1]. Here we show that, with co-circularly polarized beams, the resulting electron current carries a net spin, while with cross-polarized beams there is a spin current with no net magnetization and no net electron current. We characterize the spin currents using a Kane model of a direct bandgap semiconductor, although many of the results can be expected to hold if a more fundamental description is adopted. [1] A. Haché, Y. Kostoulas, R. Atanasov, J.L.P. Hughes, J.E. Sipe, and H.M. van Driel, Phys. Rev. Lett. 78, 306 (1997).

  7. Variable Gain Semiconductor Optical Linear Amplifier (OLA)

    NASA Astrophysics Data System (ADS)

    Michie, W. Craig; Kelly, Tony; Tomlinson, Andy; Andonovic, Ivan

    2002-12-01

    The semiconductor optical amplifier (SOA) is a versatile component that can be deployed to meet the expanding applications associated with the introduction of additional functionalities at the optical level in wavelength division multiplexed systems. The future network requires low cost, small footprint, directly controllable amplification throughout the different application layers from long haul through to metro; the intrinsic size and integration capability advantages will ensure that the SOA plays a key role in this evolution. In multi-wavelength gating/amplification applications the gain dynamics, oscillating at timescales comparable to that of the data which is being amplified, introduce issues of pattern dependent waveform distortion (patterning) in single channel, and inter-channel cross-talk in multi-wavelength cases which require management through careful SOA design and understanding of the network application scenarios. In this paper, an optical linear amplifier (OLA) architecture with the unique capability to provide variable gain whilst maintaining linear operation at high output saturation powers will be described. Initial characterisation results for the OLA will be presented.

  8. Optical investigations of nanostructured oxides and semiconductors

    NASA Astrophysics Data System (ADS)

    Irvin, Patrick Richard

    This work is motivated by the prospect of building a quantum computer: a device that would allow physicists to explore quantum mechanics more deeply, and allow everyone else to keep their credit card numbers safe on the Internet. In this thesis we explore two classes of materials that are relevant to a proposed quantum computer architecture: oxides and semiconductors. Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. We investigate strained-SrTiO 3, which is ferroelectric at room-temperature, and a composite material of (Ba,Sr)TiO3 and MgO. We present optical techniques to measure electron spin dynamics with GHz dynamical bandwidth, transform-limited spectral selectivity, and phase-sensitive detection. We demonstrate this technique by measuring GHz-spin precession in n-GaAs. We also describe our efforts to optically probe InAs/GaAs and GaAs/AlGaAs quantum dots. Nanoscale devices with photonic properties have been the subject of intense research over the past decade. Potential nanophotonic applications include communications, polarization-sensitive detectors, and solar power generation. Here we show photosensitivity of a nanoscale detector written at the interface between two oxides.

  9. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  10. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  11. All optical logic operations using semiconductor optical amplifier based devices

    NASA Astrophysics Data System (ADS)

    Wang, Qiang

    High-speed optical processing technologies are essential for the construction of all-optical networks in the information era. In this Ph. D. thesis dissertation, essential mechanisms related to the semiconductor optical amplifier (SOA) based device such as the gain and phase dynamics when a short pulse in propagating inside SOA, and, all-optical Boolean function, XOR, AND and OR have been studied. In order to realize the all-optical logic using SOA, the nonlinear gain and phase dynamics in SOA need to be studied first. The experimental results of 10--90% gain recovery curve have been presented. The recovery time is related to the carrier lifetime of the SOA and it varies with gain compression and bias current. For pulse width of a few picosecond, intraband effects need to be considered. In the SOA, phase change is also induced when a short pulse is propagating inside SOA. Unlike the conventional way of estimating the phase shift using alpha factor, the maximum phase shift is obtained first, then the effective alpha factor is calculated. The experimental results of all optical Boolean function XOR and OR at 80 Gb/s are presented using SOA-MZI-DI and SOA-DI respectively. These are the highest operating speed that has been reported. The all optical AND operation at 40 Gb/s using SOA-MZI have also been reported here. The numerical simulation shows that the performance of these all-optical Boolean operations is limited by the carrier lifetime of the SOA. The Boolean functions are the first step towards all optical circuits. The designs of a parity checker and a pseudo-random binary sequence (PRBS) generator are demonstrated. The error analysis using quality factor and eye-diagram is also presented.

  12. Nonlinear optical properties of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ricard, Gianpiero Banfi Vittorio Degiorgio Daniel

    1998-05-01

    This review is devoted to the description of recent experimental results concerning the nonlinear optical properties of semiconductor-doped glasses SDGs with particular emphasis on the regime in which the energy of the incident photon is smaller than the energy gap. A considerable theoretical and experimental effort has been devoted in the last 10years to the fundamental aspects of quantumconfined structures, which have properties somewhat intermediate between the bulk crystals and atoms or molecules. From this point of view, SDGs represent an easily available test system, and optical techniques have been a major diagnostic tool. Luminescence and absorption spectroscopy were extensively used to characterize the electronic states. The experiments aimed at the measurement of the real and imaginary parts of the third-order optical susceptibility of SDGs below the bandgap are described in some detail, and the results obtained with different techniques are compared. Besides the intrinsic fast nonlinearity due to bound electrons, SDGs may present a larger but much slower nonlinearity due to the free carriers generated by two-photon absorption. This implies that experiments have to be properly designed for separation of the two effects. In this article we stress the importance of a detailed structural characterization of the samples. Knowledge of the volume fraction occupied by the nanocrystals is necessary in order to derive from the experimental data the intrinsic nonlinearity and to compare it with the bulk nonlinearity. We discuss recent experiments in which the dependence of the intrinsic nonlinearity on the crystal size is derived by performing, on the samples, measurements of the real part and imaginary part of the nonlinear optical susceptibility and measurements of crystal size and volume fraction. Structural characterization is of interest also for a better understanding of the physical processes underlying the growth of crystallites in SDGs. The average size of

  13. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

    PubMed

    Wang, Ping; Yuan, Ying; Zhao, Chao; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Li, Xinzheng; Zhang, Xixiang; Shen, Bo

    2016-02-10

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

  14. Surface plasmon based engineering of semiconductor nanowire optics

    NASA Astrophysics Data System (ADS)

    Aspetti, Carlos Octavio

    Semiconductor nanowires combine the material properties of semiconductors, which are ubiquitous in modern technology, with nanoscale dimensions and as such, are firmly poised at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics, in particular, arises from the increased interaction between light and matter that occurs when light is confined to dimensions below the size of its wavelength, in other words, when the nanowire serves as a light trapping optical cavity, which itself is also a source of light. Light confinement is taken to new extremes by coupling to the surface plasmon modes of metallic nanostructures, where light acquires mixed photonic and electronic character, and which may focus light to deep-subwavelength regions amenable to the dimensions of the electron wave. This thesis examines how the integration of "plasmonic optical cavities" and semiconductor nanowires leads to substantial modification (and enhancement) of the optical properties of the same, resulting in orders-of-magnitude faster and more efficient light emission with colors that may be tuned as a function of optical cavity geometry. Furthermore, this method is applied to nanowires composed of both direct and indirect bandgap semiconductor materials resulting in applications such as light emission from high-energy states in light emitting materials, highly enhanced broadband light emission from nominally non-light emitting (dark) materials, and broadband (and anomalous) enhancement of light absorption in various materials, all the while maintaining the unifying theme of employing integrated plasmonic-semiconductor optical cavities to achieve tailored optical properties. We begin with a review of the electromagnetic properties of optical cavities, surface plasmon-enhanced light emission in semiconductors, and the key physical properties of semiconductor nanowires. It goes without saying that this thesis work resides at the interface between optical

  15. Physical and chemical sensing using monolithic semiconductor optical transducers

    NASA Astrophysics Data System (ADS)

    Zappe, Hans P.; Hofstetter, Daniel; Maisenhoelder, Bernd; Moser, Michael; Riel, Peter; Kunz, Rino E.

    1997-09-01

    We present two monolithically integrated optical sensor systems based on semiconductor photonic integrated circuits. These compact, robust and highly functional transducers perform all necessary optical and electro-optical functions on-chip; extension to multi-sensor arrays is easily envisaged. A monolithic Michelson interferometer for high-resolution displacement measurement and a monolithic Mach-Zehnder interferometer for refractometry are discussed.

  16. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  17. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  18. Tapered rib fiber coupler for semiconductor optical devices

    DOEpatents

    Vawter, Gregory A.; Smith, Robert Edward

    2001-01-01

    A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

  19. Semiconductor optical fibres for infrared applications: A review

    NASA Astrophysics Data System (ADS)

    Peacock, Anna C.; Healy, Noel

    2016-10-01

    Over the last decade a new class of optical fibre has emerged that incorporates semiconductor materials within the core. These fibres are rich in optoelectronic functionality and offer extended transmission bands across the infrared spectral region so that their application potential is vast. Various fabrication methods have been developed to produce fibres with a range of unary and compound semiconductor core materials, which can be either amorphous or crystalline in form. This review discusses the main fabrication procedures and the infrared optical properties of the semiconductor fibres that have been fabricated to date, then takes a look at the future prospects of this exciting new technology.

  20. Integrating magneto-optical garnet isolators on semiconductor substrates

    NASA Astrophysics Data System (ADS)

    Sung, Sang-Yeob

    In optical communications, laser sources need to be protected from unwanted reflected light, a challenge best act by magneto-optical isolators. For integrating magneto-optical isolators with semiconductor devices, including most of these laser sources, it is necessary to develop film fabrication methods that are friendly to batch semiconductor processes. Integrated magneto-optical isolators each consist of a magnetic film layer, optical cladding layers, and a magneto-optical waveguide layer. Traditionally yttrium iron garnet (YIG) films, which are the active layers in magneto-optic isolators, have been grown by thermal deposition process, such as Liquid phase epitaxy (LPE) on garnet substrates. Such thermal processes could damage semiconductor substrates and other semiconductor devices during the deposition, and garnet substrates are difficult to integrate with semiconductor devices. In this work, YIG films were grown by low-temperature RF sputtering onto non-garnet substrates, MgO, fused quartz, and more importantly Si and InP. Two different sputtering methods were used, one involved single target sputtering and the other was multi-target sputtering with a partial pressure differential. After deposition, either post thermal annealing by a conventional tube furnace or a rapid thermal annealing (RTA) was done. To improve the optical characteristics of YIG films, Bi or Ce was substituted into the films. Next, SmCo thin magnetic films were investigated for biasing the active layer. These were grown by RF sputtering. All deposited films were characterized with Energy Dispersive X-ray Spectroscopy (EDS), and X-Ray Diffractometry (XRD), to find atomic composition and crystal structures. Vibrating Sample Magnetometry (VSM) was done for magnetic characterization. Together with integrated photonic crystal polarizer, fully integrated optical isolator can be achieved. Finally, photonic integrated circuits (PIC) and optoelectric integrated circuits (OEIC) can be realized with

  1. Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2014-02-01

    The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

  2. Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

  3. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  4. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  5. Optically induced current in molecular conduction nanojunctions with semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Fainberg, Boris D.; Seideman, Tamar

    2013-06-01

    We propose a new approach to coherent control of transport via molecular junctions, which bypasses several of the hurdles to experimental realization of optically manipulated nanoelectronics noted in the previous literature. The method is based on the application of intrinsic semiconductor contacts and optical frequencies below the semiconductor bandgap. To explore the coherently controlled electronic dynamics, we introduce a density matrix formalism that accounts for both the discrete molecular state and the semiconductor quasicontinua within a single master equation and offers analytically soluble limits for a single and two-site molecular bridge. Our analytical theory predicts a new phenomenon, referred to as coherent destruction of induced tunnelling, which extends the phenomenon of coherent destruction of tunnelling frequently discussed in the previous literature. Our results illustrate the potential of semiconductor contacts in coherent control of photocurrent.

  6. Chirp-enhanced fast light in semiconductor optical amplifiers.

    PubMed

    Sedgwick, F G; Pesala, Bala; Uskov, Alexander V; Chang-Hasnain, C J

    2007-12-24

    We present a novel scheme to increase the THz-bandwidth fast light effect in semiconductor optical amplifiers and increase the number of advanced pulses. By introducing a linear chirp to the input pulses before the SOA and recompressing at the output with an opposite chirp, the advance-bandwidth product reached 3.5 at room temperature, 1.55 microm wavelength. This is the largest number reported, to the best of our knowledge, for a semiconductor slow/fast light device.

  7. Thermally robust semiconductor optical amplifiers and laser diodes

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  8. The optical deposition system for fabricating semiconductor cylinder fibers

    NASA Astrophysics Data System (ADS)

    Nivartvong, Nitipun

    2002-09-01

    In responding to the urgent need for a suitable thin film growing technique for semiconductor cylinder fiber fabrication, the optical deposition system (ODS) is introduced. It is designed to optically evaporate the semiconductor material without heating a glass tube (a substrate). A tungsten halogen bulb is used as a light source for evaporation. A cylindrical cavity reflector focuses the radiation from the light source onto an evacuated glass tube that has the semiconductor powder inside. All of these three objects are located under deionized water, which serves two purposes. One is to filter out the light wavelength in the infrared range and longer, and the other is to cool the whole system. Thus there is emissive light in the visible range left to which the glass tube is transparent. Light with frequencies in the visible range is absorbed by the semiconductor. This heats the semiconductor sufficiently to vaporize it. CdTe, Cd3P2 and GaSb are selected for demonstrations. The transmission spectrum of the deposited films is measured, then they are processed to find their energy gaps. The comparisons of the measured results with those for other thin films formed by alternate growing methods are discussed. ODS has shown substantial evidence that the target is optically energized without heating the glass tube. ODS may also be applicable to metals because they share some solid state characteristics with semiconductors.

  9. Quantum well engineering for semiconductor integrated optical sensors

    NASA Astrophysics Data System (ADS)

    Zappe, Hans P.; Hofstetter, Daniel; Arnot, Hazel E.

    1994-07-01

    Semiconductor technology, when applied to the design and fabrication of integrated optical sensors, will yield structures of improved performance and reduced cost. Key advances in this area employ two quantum well-based effects, the quantum confined Stark effect and selective quantum well intermixing, the use of which enable the monolithic integration and enhanced functionality of semiconductor-based optical sensor circuits. In this paper, we discuss the application of these effects to the fabrication of semiconductor devices useful for integrated optical sensors based on waveguide interferometry. The quantum confined Stark effect allows us to electrically define the absorption edge of detectors and permits the fabrication of high- efficiency phase modulators. By the use of different surface dielectrics, quantum well intermixing is employed to generate transparent and absorbing regions on a single substrate. Current and future applications are discussed.

  10. Emergence of transverse spin in optical modes of semiconductor nanowires

    DOE PAGES

    Alizadeh, M. H.; Reinhard, Bjorn M.

    2016-04-11

    The transverse spin angular momentum of light has recently received tremendous attention as it adds a new degree of freedom for controlling light-matter interactions. In this work we demonstrate the generation of transverse spin angular momentum by the weakly-guided mode of semiconductor nanowires. The evanescent field of these modes in combination with the transversality condition rigorously accounts for the occurrence of transverse spin angular momentum. Furthermore, the intriguing and nontrivial spin properties of optical modes in semiconductor nanowires are of high interest for a broad range of new applications including chiral optical trapping, quantum information processing, and nanophotonic circuitry.

  11. Integrated semiconductor twin-microdisk laser under mutually optical injection

    SciTech Connect

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  12. Optical and electronic properties of some semiconductors from energy gaps

    NASA Astrophysics Data System (ADS)

    Tripathy, Sunil K.; Pattanaik, Anup

    2016-03-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.

  13. Optically trapped and driven paddle-wheel

    NASA Astrophysics Data System (ADS)

    Asavei, Theodor; Nieminen, Timo A.; Loke, Vincent L. Y.; Stilgoe, Alexander B.; Bowman, Richard; Preece, Daryl; Padgett, Miles J.; Heckenberg, Norman R.; Rubinsztein-Dunlop, Halina

    2013-06-01

    We demonstrate the control and rotation of an optically trapped object, an optical paddle-wheel, with the rotation direction normal to the beam axis. This is in contrast to the usual situation where the rotation is about the beam axis. The paddle-wheel can be optically driven and moved to any position in the field of view of the microscope, which can be of interest for various biological applications where controlled application of a fluid flow is needed in a particular location and in a specific direction. This is of particular interest in signal transduction studies in cells, especially when a cell is flat and spread out on a surface.

  14. Review on optical and electrical properties of oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kim, Dong Lim; Kim, Hyun Jae

    2010-03-01

    Oxide semiconductors became one of the potential elements for large area electronics such as a channel for thin film transistors. Optical and electrical properties were modified by alloying or doping of several oxide materials; In2O3, ZnO, Ga2O3, and SnO2. The excellent properties achieved at the ternary or quaternary alloys could be explained by the role of each materials as a carrier controller, a conduction path, and etc. The metal oxide semiconductors were generally deposited by vacuum process but recently, alternative ways, like a sol-gel or an ink-jet printing, are suggested. In this review, diverse approaches on oxide semiconductors are shown, and an in-depth discussion of the optical and electrical properties alternation in metal oxide alloy fabricated by various methods is given.

  15. Semiconductor optoelectronic devices for free-space optical communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  16. Novel operation of semiconductor optical amplifier (SOA) for optoelectronic applications

    SciTech Connect

    DiJaili, S.P.

    1996-03-18

    A new effect is demonstrated that can enable all-optical logic at ultrafast speeds using semiconductor optical amplifier technology. This effect is called gain-dependent-time-shift. There may be many opportunities for growth in optical information processing systems using this effect. Modeling results were used to predict the existence of this effect. The experimental demonstration confirmed the existence of the gain-dependent-time-shift. It is predicted that an ultrafast all-optical switch with switching energies of several femtojoules, switching times of sub-100 fsec, low power, and monolithically integrable is possible.

  17. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  18. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  19. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    SciTech Connect

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  20. Invited Article: Four-mode semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wen, He; Alahmadi, Yousef; LiKamWa, Patrick; Xia, Cen; Carboni, Christian; Li, Guifang

    2016-10-01

    We demonstrate the first few-mode semiconductor optical amplifier (FM SOA) that supports up to four waveguide modes. We show that each of the modes are confined to the waveguide, overlapping the quantum wells with approximately the same amount, leading to equalized gain for each of the four waveguide modes.

  1. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  2. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  3. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  4. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  5. Linear semiconductor optical amplifiers for amplification of advanced modulation formats.

    PubMed

    Bonk, R; Huber, G; Vallaitis, T; Koenig, S; Schmogrow, R; Hillerkuss, D; Brenot, R; Lelarge, F; Duan, G-H; Sygletos, S; Koos, C; Freude, W; Leuthold, J

    2012-04-23

    The capability of semiconductor optical amplifiers (SOA) to amplify advanced optical modulation format signals is investigated. The input power dynamic range is studied and especially the impact of the SOA alpha factor is addressed. Our results show that the advantage of a lower alpha-factor SOA decreases for higher-order modulation formats. Experiments at 20 GBd BPSK, QPSK and 16QAM with two SOAs with different alpha factors are performed. Simulations for various modulation formats support the experimental findings.

  6. Statistical Transmutation in Floquet Driven Optical Lattices.

    PubMed

    Sedrakyan, Tigran A; Galitski, Victor M; Kamenev, Alex

    2015-11-06

    We show that interacting bosons in a periodically driven two dimensional (2D) optical lattice may effectively exhibit fermionic statistics. The phenomenon is similar to the celebrated Tonks-Girardeau regime in 1D. The Floquet band of a driven lattice develops the moat shape, i.e., a minimum along a closed contour in the Brillouin zone. Such degeneracy of the kinetic energy favors fermionic quasiparticles. The statistical transmutation is achieved by the Chern-Simons flux attachment similar to the fractional quantum Hall case. We show that the velocity distribution of the released bosons is a sensitive probe of the fermionic nature of their stationary Floquet state.

  7. Nonlinear optical studies of relaxation in semiconductor microstructures

    NASA Astrophysics Data System (ADS)

    Remillard, Jeffrey Thomas

    1990-11-01

    Exposing a semiconductor to optical radiation near the fundamental band gap results in the creation of populations or elementary excitations including electrons, holes, and excitons, and also results in the creation of a superposition state between the ground and excited state of the solid. The relaxation of optically generated excitons and carriers in semiconductor microstructures was studied using four wave mixing (FWM) spectroscopy. The systems studied include CdSSe microcrystallite doped glasses and GaA/AlGaAs multiple quantum well structures (MQWS). First, the nonlinear optical response of simple two level systems is examined in order to provide insight into the types of line shapes expected from semiconductors. It is shown that the line shape is strongly dependent on how the system is coupled to the reservoir and the consequences of coupling to a reservoir are examined in a FWM measurement made in atomic sodium. The first semiconductor system studied is CdSSe microcrystallite doped glass. This system is shown to have a very slow component to the nonlinear response which has an optical intensity dependence and temperature dependence which suggests that the FWM response in these materials is trap mediated. Room temperature FWM measurements in GaAs MQWS enables the measurement of the carrier recombination time and the ambipolar diffusion coefficient. Using the technique of correlated optical fields, a slow component to the nonlinear response was measured showing an interference profile which suggests a possible shift of the exciton resonance due to the optically generated carriers. At low temperatures, measurements of the exciton line shape and relaxation time were made and evidence for exciton spectral diffusion was found. The low temperature line shapes can be qualitatively reproduced using Modified Optical Bloch equations which include the effects of spectral diffusion.

  8. Spectroscopy of intraband optical transitions in anisotropic semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Turkov, Vadim K.; Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Baranov, Alexander V.; Fedorov, Anatoly V.

    2013-09-01

    We propose a new type of optical spectroscopy of anisotropic semiconductor nanocrystals, which is based on the welldeveloped stationary pump-probe technique, where the pump and probe fields are absorbed upon, respectively, interband and intraband transitions of the nanocrystals' electronic subsystem. We develop a general theory of intraband absorption based on the density matrix formalism. This theory can be applied to study degenerate eigenstates of electrons in semiconductor nanocrystals of different shapes and dimentions. We demonstrate that the angular dependence of intraband absorption by nonspherical nanocrystals enables investigating their shape and orientation, as well as the symmetry of quantum states excited by the probe field and selection rules of electronic transitions.

  9. Nonlinear optical susceptibilities of semiconductor quantum dot - metal nanoparticle hybrids

    NASA Astrophysics Data System (ADS)

    Terzis, A. F.; Kosionis, S. G.; Boviatsis, J.; Paspalakis, E.

    2016-03-01

    We theoretically study nonlinear optical effects of a semiconductor quantum dot and a spherical metal nanoparticle coupled via long-range Coulomb interaction. We solve the relevant density matrix equations in steady state and use proper perturbation theory to obtain closed-form analytical expressions for the nonlinear susceptibilities of the quantum dot, the metal nanoparticle, and the entire coupled system, up to fifth order. We also investigate the influence of the material of the semiconductor and the impact of the interparticle distance on the form of the spectra of the nonlinear susceptibilities.

  10. Pulse operation of semiconductor laser with nonlinear optical feedback

    NASA Astrophysics Data System (ADS)

    Guignard, Celine; Besnard, Pascal; Mihaescu, Adrian; MacDonald, K. F.; Pochon, Sebastien; Zheludev, Nikolay I.

    2004-09-01

    A semiconductor laser coupled to a gallium-made non linear mirror may exhibit pulse regime. In order to better understand this coupled cavity, stationary solutions and dynamics are described following the standard Lang and Kobayashi equations for a semiconductor laser submitted to nonlinear optical feedback. It is shown that the nonlinearity distorts the ellipse on which lied the stationary solutions, with a ``higher'' part corresponding to lower reflectivity and a ``lower'' part to higher reflectivity. Bifurcation diagrams and nonlinear analysis are presented while the conditions for pulsed operation are discussed.

  11. Integrated superconducting detectors on semiconductors for quantum optics applications

    NASA Astrophysics Data System (ADS)

    Kaniber, M.; Flassig, F.; Reithmaier, G.; Gross, R.; Finley, J. J.

    2016-05-01

    Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit nonclassical states of light for distributed photon-based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realize highly efficient and ultra-fast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20 % for ~4 nm thin films and single-photon timing resolutions <72 ps. We discuss the integration of such detectors into quantum dot-loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a linewidth <15 μeV displaced by 1 mm from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported.

  12. Optical coupling of deep-subwavelength semiconductor nanowires.

    PubMed

    Cao, Linyou; Fan, Pengyu; Brongersma, Mark L

    2011-04-13

    Systems of coupled resonators manifest a myriad of exciting fundamental physical phenomena. Analogous to the synthesis of molecules from single atoms, the construction of photonic molecules from stand-alone optical resonators represents a powerful strategy to realize novel functionalities. The coupling of high quality factor (Q) dielectric and semiconductor microresonators is by now well-understood and chipscale applications are abound. The coupling behavior of low-Q nanometallic structures has also been exploited to realize high-performance plasmonic devices and metamaterials. Although dense arrays of semiconductor nanoparticles and nanowires (NWs) find increasing use in optoelectronic devices, their photonic coupling has remained largely unexplored. These high refractive index nano-objects can serve as low-Q optical antennas that can effectively receive and broadcast light. We demonstrate that the broad band antenna response of a pair of NWs can be tuned significantly by engineering their optical coupling and develop an intuitive coupled-mode theory to explain our observations.

  13. Optical properties of transiently-excited semiconductor hyperbolic metamaterials

    SciTech Connect

    Campione, Salvatore; Luk, Ting S.; Liu, Sheng; Sinclair, Michael B.

    2015-10-02

    Ultrafast optical excitation of photocarriers has the potential to transform undoped semiconductor superlattices into semiconductor hyperbolic metamaterials (SHMs). In this paper, we investigate the optical properties associated with such ultrafast topological transitions. We first show reflectance, transmittance, and absorption under TE and TM plane wave incidence. In the unpumped state, the superlattice exhibits a frequency region with high reflectance (>80%) and a region with low reflectance (<1%) for both TE and TM polarizations over a wide range of incidence angles. In contrast, in the photopumped state, the reflectance for both frequencies and polarizations is very low (<1%) for a similar range of angles. Interestingly, this system can function as an all-optical reflection switch on ultrafast timescales. Furthermore, for TM incidence and close to the epsilon-near-zero point of the longitudinal permittivity, directional perfect absorption on ultrafast timescales may also be achieved. Lastly, we discuss the onset of negative refraction in the photopumped state.

  14. Optical response from lenslike semiconductor nipple arrays

    NASA Astrophysics Data System (ADS)

    Wu, H.-M.; Lai, C.-M.; Peng, L.-H.

    2008-11-01

    The authors reported the use of recessive size reduction in self-assembled polystyrene sphere mask with anisotropic etching to form lenslike nipple arrays onto the surface of silicon and gallium nitride. These devices are shown to exhibit a filling factor near to an ideal close-packed condition and paraboloidlike etch profile with slope increased proportionally to the device aspect ratio. Specular reflectivity of less than 3% was observed over the visible spectral range for the 0.35-μm-period nipple-lens arrays. Using two-dimensional rigorous coupled-wave analysis, the latter phenomenon can be ascribed to a gradual index matching mechanism accessed by a high surface-coverage semiconductor nipple array structure.

  15. Semiconductor nanocrystals for novel optical applications

    NASA Astrophysics Data System (ADS)

    Moon, Jong-Sik

    Inspired by the promise of enhanced spectral response, photorefractive polymeric composites photosensitized with semiconductor nanocrystals have emerged as an important class of materials. Here, we report on the photosensitization of photorefractive polymeric composites at visible wavelengths through the inclusion of narrow band-gap semiconductor nanocrystals composed of PbS. Through this approach, internal diffraction efficiencies in excess of 82%, two-beam-coupling gain coefficients in excess of 211 cm-1, and response times 34 ms have been observed, representing some of the best figures-of-merit reported on this class of materials. In addition to providing efficient photosensitization, however, extensive studies of these hybrid composites have indicated that the inclusion of nanocrystals also provides an enhancement in the charge-carrier mobility and subsequent reduction in the photorefractive response time. Through this approach with PbS as charge-carrier, unprecedented response times of 399 micros were observed, opening the door for video and other high-speed applications. It is further demonstrated that this improvement in response time occurs with little sacrifice in photorefractive efficiency and with internal diffraction efficiencies of 72% and two- beam-coupling gain coefficients of 500 cm-1 being measured. A thorough analysis of the experimental data is presented, supporting the hypothesized mechanism of the enhanced charge mobility without the accompaniment of superfluous traps. Finally, water soluble InP/ZnS and CdSe/ZnS quantum dots interacted with CPP and Herceptin to apply them as a bio-maker. Both of quantum dots showed the excellent potential for use in biomedical imaging and drug delivery applications. It is anticipated that these approaches can play a significant role in the eventual commercialization of these classes of materials.

  16. Optical logic and signal processing using a semiconductor laser diode-based optical bistability device

    NASA Astrophysics Data System (ADS)

    Zhang, Yuancheng; Song, Qian; He, Shaowei

    1995-02-01

    Using an optical fibre-coupled semiconductor laser diode OBD with output feedback pumping operation in 5 modes (differential gain, bistability, zero-bias, inverted differential gain, and inverted bistability) has been realized respectively, and 5 elementary optical logic functions (AND, OR, NOT, NAND, and NOR) and some optical signal processing such as limiting, reshaping, and triggering have been implemented.

  17. Hydrodynamic synchronisation of optically driven rotors

    NASA Astrophysics Data System (ADS)

    Debono, Luke J.; Box, Stuart; Phillips, David B.; Simpson, Stephen H.; Hanna, Simon

    2015-08-01

    Hydrodynamic coupling is thought to play a role in the coordinated beating of cilia and flagella, and may inform the future design of artificial swimmers and pumps. In this study, optical tweezers are used to investigate the hydrodynamic coupling between a pair of driven oscillators. The theoretical model of Lenz and Ryskin [P. Lenz and A. Ryskin, Phys. Biol. 3, 285{294 (2006)] is experimentally recreated, in which each oscillator consists of a sphere driven in a circular trajectory. The optical trap position is maintained ahead of the sphere to provide a tangential driving force. The trap is also moved radially to harmonically constrain the sphere to the circular trajectory. Analytically, it has been shown that two oscillators of this type are able to synchronise or phase-lock under certain conditions. We explore the interplay between synchronisation mechanisms and find good agreement between experiment, theory and Brownian dynamics simulations.

  18. Stimulated emission on impurity – band optical transitions in semiconductors

    SciTech Connect

    Bekin, N A; Shastin, V N

    2015-02-28

    This paper examines conditions for population inversion and amplification in the terahertz range using impurity – band electron transitions in semiconductors and semiconductor structures. Our estimates indicate that stimulated emission on such transitions under optical excitation of impurities can be obtained in a semiconductor with a sufficiently high doping level if electron heating is restricted. At a CO{sub 2} laser pump power density near 0.2 MW cm{sup -2} (photon energy of 117 meV), the gain in n-GaAs may exceed the loss by 50 cm{sup -1} provided the electron gas temperature does not exceed 40 K. We analyse the influence of the carrier effective mass and doping compensation on the gain coefficient and briefly discuss the use of resonance tunnelling for obtaining stimulated emission on impurity – band transitions in quantum cascade heterostructures. (terahertz radiation)

  19. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOEpatents

    Hui, Rongqing; Jiang,Hong-Xing; Lin, Jing-Yu

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  20. Optical-Microwave Interactions in Semiconductor Devices.

    DTIC Science & Technology

    1980-02-01

    frequency response, Liquid phase epitaxial crystal growth, Optical waveguide, Photoconductivity, Traps. 1ABSTRACT (Contirniv an, reverse side If neceaa..3...of the sensitivity for a photoconductor has been 2 given by DiDomenico and Svelto. The change in photocurrent due to optical illumination is qq AT AI...at dc ( 0 tr where 0A is the number of photons /sec (uniform illumination is assumed). The sensitivity can be written as AI oAh = o S° ~ L~ (2) 0oA

  1. Testing methodologies and systems for semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  2. Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

    SciTech Connect

    Klimov, V.; McBranch, D.; Schwarz, C.

    1998-08-10

    Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

  3. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  4. Optically Loaded Semiconductor Quantum Memory Register

    NASA Astrophysics Data System (ADS)

    Kim, Danny; Kiselev, Andrey A.; Ross, Richard S.; Rakher, Matthew T.; Jones, Cody; Ladd, Thaddeus D.

    2016-02-01

    We propose and analyze an optically loaded quantum memory that exploits capacitive coupling between self-assembled quantum-dot molecules and electrically gated quantum-dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and outline both its operation and fabrication. We provide self-consistent Poisson-Schrödinger simulations to establish the design viability, to refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.

  5. Near-field Optical Measurements of Semiconductor Materials and Devices

    NASA Astrophysics Data System (ADS)

    Farahi, R. H.; Wetsel, G. C., Jr.; Cunningham, A. J.

    1998-03-01

    We are applying a Reflection-mode Apertureless Near-field Scanning Optical Microscope (RANSOM) to study defect detection in semiconductor devices and materials. Optical data from approach curves show a characteristic near-field optical signal. Evaluation of lateral definition is accomplished by correlation with known features of 100 nm or less. The RANSOM regulates on the force between the tip and sample; probe tips are made of etched tungsten wires which vibrate in the pecking mode. Since the metallic tip is conductive, we have a multi-purpose scanned probe capable of simultaneously gathering current, force (topographical), and optical data. With the RANSOM, leakage currents through a SiO2 layer can be detected along with topographical and optical information. Such capability could be applied to the current leakage problem across field-oxide edges. Knowledge of the leakage current across the field oxide and the thickness gradient of its edge is very important in process development of CMOS devices.

  6. Coherently driven semiconductor quantum dot at a telecommunication wavelength.

    PubMed

    Takagi, Hiroyuki; Nakaoka, Toshihiro; Watanabe, Katsuyuki; Kumagai, Naoto; Arakawa, Yasuhiko

    2008-09-01

    We proposed and demonstrate use of optical driving pulses at a telecommunication wavelength for exciton-based quantum gate operation. The exciton in a self-assembled quantum dot is coherently manipulated at 1.3 microm through Rabi oscillation. The telecom-band exciton-qubit system incorporates standard optical fibers and fiber optic devices. The coherent manipulation of the two-level system compatible with flexible and stable fiber network paves the way toward practical optical implementation of quantum information processing devices.

  7. Dephasing of optically generated electron spins in semiconductors

    NASA Astrophysics Data System (ADS)

    Idrish Miah, M.

    2010-09-01

    Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub- μs and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

  8. All-optical active switching in individual semiconductor nanowires.

    PubMed

    Piccione, Brian; Cho, Chang-Hee; van Vugt, Lambert K; Agarwal, Ritesh

    2012-10-01

    The imminent limitations of electronic integrated circuits are stimulating intense activity in the area of nanophotonics for the development of on-chip optical components, and solutions incorporating direct-bandgap semiconductors are important in achieving this end. Optical processing of data at the nanometre scale is promising for circumventing these limitations, but requires the development of a toolbox of components including emitters, detectors, modulators, waveguides and switches. In comparison to components fabricated using top-down methods, semiconductor nanowires offer superior surface properties and stronger optical confinement. They are therefore ideal candidates for nanoscale optical network components, as well as model systems for understanding optical confinement. Here, we demonstrate all-optical switching in individual CdS nanowire cavities with subwavelength dimensions through stimulated polariton scattering, as well as a functional NAND gate built from multiple switches. The device design exploits the strong light-matter coupling present in these nanowires, leading to footprints that are a fraction of those of comparable silicon-based dielectric contrast and photonic crystal devices.

  9. Excitability in a quantum dot semiconductor laser with optical injection.

    PubMed

    Goulding, D; Hegarty, S P; Rasskazov, O; Melnik, S; Hartnett, M; Greene, G; McInerney, J G; Rachinskii, D; Huyet, G

    2007-04-13

    We experimentally analyze the dynamics of a quantum dot semiconductor laser operating under optical injection. We observe the appearance of single- and double-pulse excitability at one boundary of the locking region. Theoretical considerations show that these pulses are related to a saddle-node bifurcation on a limit cycle as in the Adler equation. The double pulses are related to a period-doubling bifurcation and occur on the same homoclinic curve as the single pulses.

  10. Refractory period of an excitable semiconductor laser with optical injection

    NASA Astrophysics Data System (ADS)

    Garbin, B.; Dolcemascolo, A.; Prati, F.; Javaloyes, J.; Tissoni, G.; Barland, S.

    2017-01-01

    Injection-locked semiconductor lasers can be brought to a neuronlike excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.

  11. Low-cost adaptive directly modulated optical OFDM based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Kashany-Mizrahi, Inbal; Sadot, Dan

    2013-10-01

    Low cost optical OFDM has great potential for next generation optical access networks and PONs, due to its high flexibility in bandwidth manipulation, and high spectral efficiency. Here, a low cost optical OFDM is proposed, based on adaptive direct modulation semiconductor optical amplifier. Adaptive current loading techniques for PAPR (peak to average power ratio) reduction are proposed and analyzed. Simulations show that the proposed adaptive techniques enable significant BER improvement.

  12. Entropy-driven formation of binary semiconductor-nanocrystal superlattices.

    PubMed

    Evers, Wiel H; De Nijs, Bart; Filion, Laura; Castillo, Sonja; Dijkstra, Marjolein; Vanmaekelbergh, Daniel

    2010-10-13

    One of the main reasons for the current interest in colloidal nanocrystals is their propensity to form superlattices, systems in which (different) nanocrystals are in close contact in a well-ordered three-dimensional (3D) geometry resulting in novel material properties. However, the principles underlying the formation of binary nanocrystal superlattices are not well understood. Here, we present a study of the driving forces for the formation of binary nanocrystal superlattices by comparing the formed structures with full free energy calculations. The nature (metallic or semiconducting) and the size-ratio of the two nanocrystals are varied systematically. With semiconductor nanocrystals, self-organization at high temperature leads to superlattices (AlB(2), NaZn(13), MgZn(2)) in accordance with the phase diagrams for binary hard-sphere mixtures; hence entropy increase is the dominant driving force. A slight change of the conditions results in structures that are energetically stabilized. This study provides rules for the rational design of 3D nanostructured binary semiconductors, materials with promises in thermoelectrics and photovoltaics and which cannot be reached by any other technology.

  13. Static gain saturation in quantum dot semiconductor optical amplifiers.

    PubMed

    Meuer, Christian; Kim, Jungho; Laemmlin, Matthias; Liebich, Sven; Capua, Amir; Eisenstein, Gadi; Kovsh, Alexey R; Mikhrin, Sergey S; Krestnikov, Igor L; Bimberg, Dieter

    2008-05-26

    Measurements of saturated amplified spontaneous emission-spectra of quantum dot semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot ground state population from excited states. This saturation behavior is perfectly modeled by a rate equation model. We examined experimentally the dependence of saturation on the drive current and the saturating optical pump power as well as on the pump wavelength. A coherent noise spectral hole is observed with which we assess dynamical properties and propose optimization of the SOA operating parameters for high speed applications.

  14. Theory of the Electronic and Optical Properties of Semiconductor Heterostructures

    DTIC Science & Technology

    1990-01-01

    March, 1990. 2. Theor of Optically-Induced Screening of Piezoelectric Fields in Strained H I I Quntum Wells D. A. Broido, B. V. Shanabrook and D. Gammon, Fall, 1990 Meeting of the Materials Research Society, Boston. 10 ...AD-A231 438 Final Technical Report for ONR Contract #V00014-89-J. 1786 entitled Theory of the Electronic and Optical Properties of Semiconductor... fields in each layer as a consequence of the piezoelectric effect.1 2 It is well known that the strain shifts the conduction and valence band energies

  15. Sensitivity of quantum-dot semiconductor lasers to optical feedback.

    PubMed

    O'Brien, D; Hegarty, S P; Huyet, G; Uskov, A V

    2004-05-15

    The sensitivity of quantum-dot semiconductor lasers to optical feedback is analyzed with a Lang-Kobayashi approach applied to a standard quantum-dot laser model. The carriers are injected into a quantum well and are captured by, or escape from, the quantum dots through either carrier-carrier or phonon-carrier interaction. Because of Pauli blocking, the capture rate into the dots depends on the carrier occupancy level in the dots. Here we show that different carrier capture dynamics lead to a strong modification of the damping of the relaxation oscillations. Regions of increased damping display reduced sensitivity to optical feedback even for a relatively large alpha factor.

  16. Optically pumped semiconductor lasers for atomic and molecular physics

    NASA Astrophysics Data System (ADS)

    Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

    2015-03-01

    Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

  17. Transient optical properties of semiconductors under femtosecond x-ray irradiation

    NASA Astrophysics Data System (ADS)

    Tkachenko, Victor; Medvedev, Nikita; Li, Zheng; Piekarz, Przemysław; Ziaja, Beata

    2016-04-01

    Semiconductors under femtosecond x-ray irradiation are transiently excited to nonequilibrium states. This can lead to observable material modifications. During the excitation and relaxation dynamics, optical properties of the solid are changing, affected by both transient electron excitation as well as the evolution of the atomic structure. In this paper we apply a unified hybrid model to trace these two effects. Transient evolution of the optical properties is calculated within the transferable tight-binding approach. The presented methodology of calculation of the complex dielectric function proves to be capable of describing changes in the optical parameters during the phase transitions, when the solids are driven out of equilibrium by intense laser pulses, in a reasonable agreement with experiments.

  18. Donor-driven spin relaxation in multivalley semiconductors.

    PubMed

    Song, Yang; Chalaev, Oleg; Dery, Hanan

    2014-10-17

    The observed dependence of spin relaxation on the identity of the donor atom in n-type silicon has remained without explanation for decades and poses a long-standing open question with important consequences for modern spintronics. Taking into account the multivalley nature of the conduction band in silicon and germanium, we show that the spin-flip amplitude is dominated by short-range scattering off the central-cell potential of impurities after which the electron is transferred to a valley on a different axis in k space. Through symmetry arguments, we show that this spin-flip process can strongly affect the spin relaxation in all multivalley materials in which time-reversal cannot connect distinct valleys. From the physical insights gained from the theory, we provide guidelines to significantly enhance the spin lifetime in semiconductor spintronics devices.

  19. Progress of the quantum nano-optics of semiconductors group at Optical Sciences

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky; Gehl, Michael R.; Zandbergen, Sander; Keiffer, Patrick; Sears, Jasmine; Khitrova, Galina

    2014-09-01

    The history of semiconductor quantum optics group in the College of Optical Sciences will be discussed. The work from planar microcavities including VCSELs, photonic crystal cavities leading to the observation of strong-coupling between an L3 cavity and a quantum dot, and now metallic cavities coupled to quantum wells and quantum dots will be described.

  20. Simulating semiconductor structures for next-generation optical inspection technologies

    NASA Astrophysics Data System (ADS)

    Golani, Ori; Dolev, Ido; Pond, James; Niegemann, Jens

    2016-02-01

    We present a technique for optimizing advanced optical imaging methods for nanoscale structures, such as those encountered in the inspection of cutting-edge semiconductor devices. The optimization flow is divided to two parts: simulating light-structure interaction using the finite-difference time-domain (FDTD) method and simulating the optical imaging system by means of its optical transfer function. As a case study, FDTD is used to simulate 10-nm silicon line-space and static random-access memory patterns, with irregular structural protrusions and silicon-oxide particles as defects of interest. An ultraviolet scanning-spot optical microscope is used to detect these defects, and the optimization flow is used to find the optimal imaging mode for detection.

  1. Petahertz optical drive with wide-bandgap semiconductor

    NASA Astrophysics Data System (ADS)

    Mashiko, Hiroki; Oguri, Katsuya; Yamaguchi, Tomohiko; Suda, Akira; Gotoh, Hideki

    2016-08-01

    High-speed photonic and electronic devices at present rely on radiofrequency electric fields to control the physical properties of a semiconductor, which limits their operating speed to terahertz frequencies (1012 Hz ref. ). Using the electric field from intense light pulses, however, could extend the operating frequency into the petahertz regime (1015 Hz ref. ). Here we demonstrate optical driving at a petahertz frequency in the wide-bandgap semiconductor gallium nitride. Few-cycle near-infrared pulses are shown to induce electric interband polarization though a multiphoton process. Dipole oscillations with a periodicity of 860 as are revealed in the gallium nitride electron and hole system by using the quantum interference between the two transitions from the valence and conduction band states, which are probed by an extremely short isolated attosecond pulse with a coherent broadband spectrum. In principle, this shows that the conductivity of the semiconductor can be manipulated on attosecond timescales, which corresponds to instantaneous light-induced switching from insulator to conductor. The resultant dipole frequency reaches 1.16 PHz, showing the potential for future high-speed signal processing technologies based on wide-bandgap semiconductors.

  2. Nonlinear Optical Studies of Relaxation in Semiconductor Microstructures.

    NASA Astrophysics Data System (ADS)

    Remillard, Jeffrey Thomas

    The purpose of this research is to study the relaxation of optically generated excitons and carriers in semiconductor microstructures using four wave mixing (FWM) spectroscopy. The systems studied include CdSSe microcrystallite doped glasses and GaAs/AlGaAs multiple quantum well structures (MQWS). Exposing a semiconductor to optical radiation near the fundamental band gap results in the creation of populations of elementary excitations including electrons, holes, and excitons, and also results in the creation of a superposition state between the ground and excited state of the solid. The work in this dissertation examines the relaxation of the populations of elementary excitations and the relaxation of the coherence between the ground and excited state using four wave mixing spectroscopy. First, the nonlinear optical response of simple two level systems is examined in order to provide insight into the types of line shapes expected from semiconductors. It is shown that the line shape is strongly dependent on how the system is coupled to the reservoir and the consequences of coupling to a reservoir are examined in a FWM measurement made in atomic sodium. The first semiconductor system studied is CdSSe microcrystallite doped glass. This system is shown to have a very slow component to the nonlinear response which has a optical intensity dependence and temperature dependence which suggests that the FWM response in these materials is trap mediated. Room temperature FWM measurements in GaAs MQWS enables the measurement of the carrier recombination time and the ambipolar diffusion coefficient. Using the technique of correlated optical fields, a slow component to the nonlinear response was measured showing an interference profile which suggests a possible shift of the exciton resonance due to the optically generated carriers. At low temperatures (2-20 K), measurements of the exciton line shape and relaxation time were made and evidence for exciton spectral diffusion was

  3. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1987-01-01

    A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

  4. Optical band gaps of organic semiconductor materials

    NASA Astrophysics Data System (ADS)

    Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2016-08-01

    UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

  5. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1988-01-01

    Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

  6. All-Optical Logic Gates Based on Semiconductor Optical Amplifiers and Tunable Filters

    NASA Astrophysics Data System (ADS)

    Zhang, Xinliang; Xu, Jing; Dong, Jianji; Huang, Dexiu

    All-optical logic gates based on semiconductor optical amplifiers (SOAs) and tunable filters are investigated in this paper. Based on single SOA and different filter detuning, five different logic gates at 40Gb/s were demonstrated and all-optical digital 2-4 encoder was also realized. All-optical generation of minterms for two input signals and three input signals are also demonstrated based on comb filters and SOAs. Advantages such as powerful function, flexible operational principle and possible integrated could help these schemes to have potential applications in optical computing and optical networks.

  7. Metal-optic and Plasmonic Semiconductor-based Nanolasers

    NASA Astrophysics Data System (ADS)

    Lakhani, Amit Manmohan

    Over the past few decades, semiconductor lasers have relentlessly followed the path towards miniaturization. Smaller lasers are more energy efficient, are cheaper to make, and open up new applications in sensing and displays, among many other things. Yet, up until recently, there was a fundamental problem with making lasers smaller: purely semiconductor lasers couldn't be made smaller than the diffraction limit of light. In recent years, however, metal-based lasers have been demonstrated in the nanoscale that have shattered the diffraction limit. As optical materials, metals can be used to either reflect light (metal-optics) or convert light to electrical currents (plasmonics). In both cases, metals have provided ways to squeeze light beyond the diffraction limit. In this dissertation, I experimentally demonstrated one nanolaser based on plasmonic transduction and another laser based on metal-optic reflection. To create coherent plasmons, I designed a nanolaser based on a plasmonic bandgap defect state inside a surface plasmonic crystal. In a one-dimensional periodic semiconductor beam, I was able to confine surface plasmons by interrupting the periodicity of the crystal. These confined surface plasmons then underwent laser oscillations in effective mode volumes as small as 0.007 cubic wavelengths. At this electromagnetic volume, energy was squeezed 10 times smaller than those possible in similar photonic crystals that do not utilize metal. This demonstration should pave the way for achieving engineered nanolasers with deep-subwavelength mode volumes and enable plasmonic crystals to become attractive platforms for designing plasmons. After achieving large reductions in electromagnetic mode volumes, I switched to a metal-optics-based nanolaser design to further reduce the physical volumes of small light sources. The semiconductor nanopatch laser achieved laser oscillations with subwavelength-scale physical dimensions (0.019 cubic wavelengths) and effective mode

  8. Density driven structural transformations in amorphous semiconductor clathrates

    DOE PAGES

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; ...

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with themore » consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.« less

  9. Density driven structural transformations in amorphous semiconductor clathrates

    SciTech Connect

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with the consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.

  10. Optical switching of nuclear spin–spin couplings in semiconductors

    PubMed Central

    Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

    2011-01-01

    Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear–spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings. PMID:21730962

  11. Optical switching of nuclear spin-spin couplings in semiconductors.

    PubMed

    Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

    2011-07-05

    Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear-spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings.

  12. Adaptive optics assisted reconfigurable liquid-driven optical switch

    NASA Astrophysics Data System (ADS)

    Fuh, Yiin-Kuen; Huang, Wei-Chi

    2013-07-01

    This study demonstrates a mechanical-based, liquid-driven optical switch integrated with adaptive optics and a reconfigurable black liquid (dye-doped liquid). The device aperture can be continuously tuned between 0.6 and 6.9 mm, precisely achieved by a syringe pump for volume control. Adaptive optics (AO) capability and possible enhancement of the lost power intensity of the ink-polluted glass plate have also been experimentally investigated. While measuring power intensity with/without AO indicates only a marginal difference of ˜1%, a significant difference of 3 s in the response characteristic of "switching on" time can be observed. An extremely high contrast ratio of ˜105 for a red-colored light is achieved.

  13. Optical activity of semiconductor nanocrystals with ionic impurities

    NASA Astrophysics Data System (ADS)

    Tepliakov, N. V.; Baimuratov, A. S.; Gun'ko, Yu. K.; Baranov, A. V.; Fedorov, A. V.; Rukhlenko, I. D.

    2017-01-01

    The strength of the enantioselective interaction of chiral semiconductor nanocrystals with circularly polarized light can be varied over a wide range, which finds a series of important applications in modern nanophotonics. As a rule, this interaction is relatively weak, because the dimension of nanocrystals is much smaller than the wavelength of the optical radiation, and the optical activity of nanocrystals is rather low. In this work, we show theoretically that, by applying ion doping, one can significantly enhance the optical activity of nanocrystals and to vary its magnitude over a wide range of values and over a wide range of frequencies. We show that, by precisely arranging impurities inside nanocrystals, one can optimize the rotatory strengths of intraband transitions, making them 100 times stronger than typical rotatory strengths of small chiral molecules.

  14. Integrated semiconductor optical sensors for cellular and neural imaging.

    PubMed

    Levi, Ofer; Lee, Thomas T; Lee, Meredith M; Smith, Stephen J; Harris, James S

    2007-04-01

    We review integrated optical sensors for functional brain imaging, localized index-of-refraction sensing as part of a lab-on-a-chip, and in vivo continuous monitoring of tumor and cancer stem cells. We present semiconductor-based sensors and imaging systems for these applications. Measured intrinsic optical signals and tissue optics simulations indicate the need for high dynamic range and low dark-current neural sensors. Simulated and measured reflectance spectra from our guided resonance filter demonstrate the capability for index-of-refraction sensing on cellular scales, compatible with integrated biosensors. Finally, we characterized a thermally evaporated emission filter that can be used to improve sensitivity for in vivo fluorescence sensing.

  15. Optical properties of transiently-excited semiconductor hyperbolic metamaterials

    DOE PAGES

    Campione, Salvatore; Luk, Ting S.; Liu, Sheng; ...

    2015-10-02

    Ultrafast optical excitation of photocarriers has the potential to transform undoped semiconductor superlattices into semiconductor hyperbolic metamaterials (SHMs). In this paper, we investigate the optical properties associated with such ultrafast topological transitions. We first show reflectance, transmittance, and absorption under TE and TM plane wave incidence. In the unpumped state, the superlattice exhibits a frequency region with high reflectance (>80%) and a region with low reflectance (<1%) for both TE and TM polarizations over a wide range of incidence angles. In contrast, in the photopumped state, the reflectance for both frequencies and polarizations is very low (<1%) for a similarmore » range of angles. Interestingly, this system can function as an all-optical reflection switch on ultrafast timescales. Furthermore, for TM incidence and close to the epsilon-near-zero point of the longitudinal permittivity, directional perfect absorption on ultrafast timescales may also be achieved. Lastly, we discuss the onset of negative refraction in the photopumped state.« less

  16. Nonlinear Optical Parameters of Magnetoactive Semiconductor-Plasmas

    NASA Astrophysics Data System (ADS)

    Singh, M.; Joseph, D.; Duhan, S.

    The nonlinear optical parameters (absorption coefficient and refractive index) of semiconductor-plasmas subjected to a transverse magnetic field have been investigated analytically. By employing the coupled-mode scheme, an expression of third-order optical susceptibility and resultant nonlinear absorption and refractive index of the medium are obtained. The analysis has been applied to both cases, viz., centrosymmetric (β = 0) and noncentrosymmetric (β ≠ 0) in the presence of magnetic field. The numerical estimates are made for InSb crystal at liquid nitrogen temperature duly irradiated by a 10-nanosecond pulsed 10.6 μm CO2 laser. The influence of doping concentration and magnetic field on both the nonlinear absorption and refractive index has been explored, and the results are found to be well in agreement with theory and experiment. Analysis further establishes that absorption coefficient and refractive index can be controlled with precision in semiconductors by the proper selection of doping concentration and an external magnetic field, and hence these media may be used for fabrication of fast cubic nonlinear optical devices under off-resonant transition regime.

  17. Optical properties of transiently-excited semiconductor hyperbolic metamaterials

    DOE PAGES

    Campione, Salvatore; Luk, Ting S.; Liu, Sheng; ...

    2015-10-02

    Ultrafast optical excitation of photocarriers has the potential to transform undoped semiconductor superlattices into semiconductor hyperbolic metamaterials (SHMs). In this paper, we investigate the optical properties associated with such ultrafast topological transitions. We first show reflectance, transmittance, and absorption under TE and TM plane wave incidence. In the unpumped state, the superlattice exhibits a frequency region with high reflectance (>80%) and a region with low reflectance (<1%) for both TE and TM polarizations over a wide range of incidence angles. In contrast, in the photopumped state, the reflectance for both frequencies and polarizations is very low (<1%) for a similarmore » range of angles. Interestingly, this system can function as an all-optical reflection switch on ultrafast timescales. Furthermore, for TM incidence and close to the epsilon-near-zero point of the longitudinal permittivity, directional perfect absorption on ultrafast timescales may also be achieved. Lastly, we discuss the onset of negative refraction in the photopumped state.« less

  18. Sideband Raman Cooling of Optical Phonons in Semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Kwek, Leong Chuan; Xiong, Qihua

    2014-03-01

    Last century has witnessed a tremendous success of laser cooling technology from trapped atomic ions to solid-state optical refrigeration. As one of the laser cooling techniques, sideband Raman cooling plays an important role in quantum ground state preparation, coherent quantum-state manipulation and quantum phenomena study. However, those studies still limited in trapped atomic ions and cavity optomechanics, which need be cooled it below than 0.1 Kelvin even tens of nano-Kelvin due to very low frequency of phonons from several kHz to GHz. Here we report sideband Raman cooling and heating experiments of longitudinal optical phonon (LOP) with a 6.23 THz in semiconductor ZnTe nano-ribbons. By using of red-sideband laser, we cool the LOP from 225 to 55 Kelvin, corresponding to an average occupation number reduced from 0.36 to 0.005. We also observe a LOPs heating from 230 to 384 Kelvin with a blue-sideband pumping. Our experiment opens a possibility of all solid state quantum applications using semiconductor optical phonon mediated coupling at room temperature. We gratefully acknowledge funding from Singapore NRF, MOE and NTU.

  19. Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

    PubMed

    Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

    2007-07-01

    We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

  20. Standing-wave nonlinear optics in an integrated semiconductor microcavity.

    PubMed

    Hayat, Alex; Orenstein, Meir

    2007-10-01

    We present a concept of standing-wave optical frequency conversion in dispersive microcavities theoretically and experimentally, allowing efficient ultracompact nonlinear photonics. We developed a time-dependent model, incorporating the dispersion into the structure of the spatial cavity modes, where the conversion efficiency is enhanced by the optimization of a nonlinear cavity mode overlap. We designed and fabricated integrated double-resonance semiconductor microcavities for standing-wave second-harmonic generation. The measured efficiency exhibits a significant maximum near the cavity resonance owing to the intracavity power enhancement and the dispersion-induced wavelength detuning effect on the mode overlap, in good agreement with our theoretical predictions.

  1. DBR-free optically pumped semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) provide high beam quality with high average-power power at designer wavelengths. However, material choices are limited by the need for a distributed Bragg reflector (DBR), usually monolithically integrated with the active region. We demonstrate DBR-free SDL active regions, which have been lifted off and bonded to various transparent substrates. For an InGaAs multi-quantum well sample bonded to a diamond window heat spreader, we achieved CW lasing with an output power of 2 W at 1150 nm with good beam quality.

  2. Predictability of extreme intensity pulses in optically injected semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Alvarez, Nuria Martinez; Borkar, Saurabh; Masoller, Cristina

    2017-06-01

    The predictability of extreme intensity pulses emitted by an optically injected semiconductor laser is studied numerically, by using a well-known rate equation model. We show that symbolic ordinal time-series analysis allows to identify the patterns of intensity oscillations that are likely to occur before an extreme pulse. The method also gives information about patterns which are unlikely to occur before an extreme pulse. The specific patterns identified capture the topology of the underlying chaotic attractor and depend on the model parameters. The methodology proposed here can be useful for analyzing data recorded from other complex systems that generate extreme fluctuations in their output signals.

  3. Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions.

    PubMed

    Celano, Thomas A; Hill, David J; Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; McBride, James R; Cahoon, James F

    2016-08-10

    Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds.

  4. Electronic structure and optical transition of semiconductor nanocrystallites

    NASA Astrophysics Data System (ADS)

    Xia, Jian-Bai; Cheah, K. W.

    1997-11-01

    The electronic states and optical transition properties of three semiconductor nanocrystallites, Si, GaAs, and ZnSe, are studied using the empirical pseudopotential homojunction model. The energy levels, wave functions, optical transition matrix elements, and lifetimes are obtained for quadratic prisms with widths from 11 to 27 Å. It is found that the three kinds of prism have different quantum confinement properties. For Si prisms, the energy gaps vary with the equivalent diameter d as 0953-8984/9/45/013/img1, in agreement with previous theoretical calculations. For the same d the energy gaps are slightly different for different shapes: large for the prism with large aspect ratio; small for the prism with small aspect ratio. The exponent of d depends on the boundary barrier height, i.e. the extent of penetration of the wave function into the vacuum. The wave function of the LUMO states consists mainly of bulk X states. The optical transition matrix elements are much smaller than those of direct transition, and increase with decreasing width. The corresponding lifetimes decrease from the millisecond range to the microsecond range, and the change is abrupt depending on the symmetry and composition of the wave function of the LUMO and HOMO states. For GaAs prisms, the energy gap is also pseudo-direct, but the optical transition matrix elements are larger than those of Si prisms by two orders of magnitude for the same width. For ZnSe prisms, the energy gap is always direct, and the optical transition matrix elements are comparable with those of direct energy gap bulk semiconductors. In some cases the symmetry of the HOMO state changes, resulting in an abrupt decrease of the transition matrix element. The calculated lifetimes of the Si prism and the positions of PL peaks are in agreement with experimental results for porous Si.

  5. New Bifurcation Routes to Chaos of a Driven Current Filament in Semiconductors Simulated by Numerical Computation

    NASA Astrophysics Data System (ADS)

    Aoki, K.; Mugibayashi, N.; Yamamoto, K.

    1986-01-01

    Bifurcation routes to chaos of a driven current filament in semiconductors have been investigated by numerical computation. Ths S-shaped current-voltage (J-E) characteristic is described by the modified Crandall's model. The catastrophic J-E curve induced by impact ionization of neutral donors is driven by an alternating electric field superimposed on d.c. bias E0. As a function of E0, the prototype of period-doubling bifurcation (Feigenbaum scenario) and intermittency are simulated. However, under the influences of joule heating and slow response of space charge, breakdown of the Feigenbaum scenario is found.

  6. Terahertz Time-Domain Spectroscopy System Driven by a Monolithic Semiconductor Laser

    NASA Astrophysics Data System (ADS)

    Merghem, K.; Busch, S. F.; Lelarge, F.; Koch, M.; Ramdane, A.; Balzer, J. C.

    2017-08-01

    A fiber coupled terahertz time-domain spectroscopy (THz TDS) system which is driven by a pulsed monolithic semiconductor laser is presented. A bandwidth of over 0.6 THz with a signal to noise ratio (SNR) of 45 dB has been achieved at a wavelength of 1550 nm. This concept could pave the way towards ultra-compact and low-cost THz TDS systems.

  7. Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications

    NASA Technical Reports Server (NTRS)

    Tratt, David M.; Mansour, Kamjou; Menzies, Robert T.; Qiu, Yueming; Forouhar, Siamak; Maker, Paul D.; Muller, Richard E.

    2001-01-01

    The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch

  8. Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications

    NASA Technical Reports Server (NTRS)

    Tratt, David M.; Mansour, Kamjou; Menzies, Robert T.; Qiu, Yueming; Forouhar, Siamak; Maker, Paul D.; Muller, Richard E.

    2001-01-01

    The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch

  9. Laser with optically driven Q-switch

    NASA Technical Reports Server (NTRS)

    Hemmati, Hamid (Inventor)

    1995-01-01

    An optically driven interactive Q-switch, i.e., a Q-switch that responds to a short pulse of light, for example, from external light-emitting diodes (LED's) or diode lasers, is provided for producing an output laser pulse from electronic energy stored in a laser medium. Q-switching is thus achieved on demand by electrically pulsing the light source to produce a pulse of light directed onto a Q-switch medium in the laser cavity. Electronic control of the light pulse from the external source will thus provide not only efficient Q-switching frequency but also independent control of output laser pulse width with a fast rise time for each output laser pulse.

  10. Laser with optically driven Q-switch

    NASA Technical Reports Server (NTRS)

    Hemmati, Hamid (Inventor)

    1993-01-01

    An optically driven interactive Q-switch, i.e., a Q-switch that responds to a short pulse of light, for example, from external light-emitting diodes (LEDs) or diode lasers, is provided for producing an output laser pulse from electronic energy stored in a laser medium. Q-switching is thus achieved on demand by electrically pulsing the light source to produce a pulse of light directed onto a Q-switch medium in the laser cavity. Electronic control of the light pulse from the external source will thus provide not only efficient Q-switching frequency but also independent control of output laser pulse width with a fast rise time for each output laser pulse.

  11. Optical switching of polariton density patterns in a semiconductor microcavity

    NASA Astrophysics Data System (ADS)

    Kwong, N. H.; Tsang, C. Y.; Luk, Samuel M. H.; Tse, Y. C.; Chan, Chris K. P.; Lewandowski, P.; Leung, P. T.; Schumacher, Stefan; Binder, R.

    2017-03-01

    Phase-conjugate scattering can trigger modulational instabilities in a fluid of exciton-polaritons created in a pumped semiconductor quantum-well microcavity. These instabilities can settle into density patterns, e.g. hexagons and stripes, which produce corresponding patterns in the emitted light. The density patterns can be switched by relatively weak control optical beams. This paper reviews progress in our theoretical understanding of the physical processes that regulate the competitions among various patterns and drive the optical switching. Simulation results of pattern switching using a microscopic model of polariton dynamics are shown, and the mechanisms underlying competitions and switching are analyzed using reduced models that restrict the polariton motions to a limited number of relevant modes. We also briefly indicate the effects of the spin dependence of the polariton dynamics on the patterns.

  12. Solitary and coupled semiconductor ring lasers as optical spiking neurons.

    PubMed

    Coomans, W; Gelens, L; Beri, S; Danckaert, J; Van der Sande, G

    2011-09-01

    We theoretically investigate the possibility of generating pulses in an excitable (asymmetric) semiconductor ring laser (SRL) using optical trigger pulses. We show that the phase difference between the injected field and the electric field inside the SRL determines the direction of the perturbation in phase space. Due to the folded shape of the excitability threshold, this has an important influence on the ability to cross it. A mechanism for exciting multiple consecutive pulses using a single trigger pulse (i.e., multipulse excitability) is revealed. We furthermore investigate the possibility of using asymmetric SRLs in a coupled configuration, which is a first step toward an all-optical neural network using SRLs as building blocks.

  13. Solitary and coupled semiconductor ring lasers as optical spiking neurons

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Gelens, L.; Beri, S.; Danckaert, J.; van der Sande, G.

    2011-09-01

    We theoretically investigate the possibility of generating pulses in an excitable (asymmetric) semiconductor ring laser (SRL) using optical trigger pulses. We show that the phase difference between the injected field and the electric field inside the SRL determines the direction of the perturbation in phase space. Due to the folded shape of the excitability threshold, this has an important influence on the ability to cross it. A mechanism for exciting multiple consecutive pulses using a single trigger pulse (i.e., multipulse excitability) is revealed. We furthermore investigate the possibility of using asymmetric SRLs in a coupled configuration, which is a first step toward an all-optical neural network using SRLs as building blocks.

  14. Quantum of optical absorption in two-dimensional semiconductors.

    PubMed

    Fang, Hui; Bechtel, Hans A; Plis, Elena; Martin, Michael C; Krishna, Sanjay; Yablonovitch, Eli; Javey, Ali

    2013-07-16

    The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, AQ = πα/nc for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and nc is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III-V quantum wells and graphene.

  15. All-optical sampling based on quantum-dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Chen; Wang, Yongjun; Wang, Lina

    2016-11-01

    In recent years, the all-optical signal processing system has become a hot research field of optical communication. This paper focused on the basic research of quantum-dot (QD) semiconductor optical amplifier (SOA) and studied its practical application to all-optical sampling. A multi-level dynamic physical model of QD-SOA is established, and its ultrafast dynamic characteristics are studied through theoretical and simulation research. For further study, an all-optical sampling scheme based on the nonlinear polarization rotation (NPR) effect of QD-SOA is also proposed. This paper analyzed the characteristics of optical switch window and investigated the influence of different control light pulses on switch performance. The presented optical sampling method has an important role in promoting the improvement of all-optical signal processing technology.

  16. Nonlinear optical properties of atomic vapor and semiconductors

    SciTech Connect

    Kim, Doseok

    1997-05-01

    This thesis contains the study of highly forbidden resonant second harmonic generation (SHG) in atomic potassium vapor using tunable picosecond pulses. Various output characteristics of vapor SHG have been investigated including the input intensity dependence, potassium vapor density dependence, buffer gas pressure dependence, and spatial profile. Recently, the discovery of new nonlinear optical crystals such as barium borate (β-BaB2O4, BBO) and lithium borate (LiB3O5, LBO) has greatly improved the performance of a tunable coherent optical devices based on optical parametric generation and amplification. In the second part of this thesis, a homebuilt picosecond optical parametric generator/amplifier (OPG/OPA) system is described in detail, including its construction details and output characteristics. This laser device has found many useful applications in spectroscopic studies including surface nonlinear optical spectroscopy via sum-frequency generation (SFG). The last part of this thesis reports studies on multiphoton-excited photoluminescence from porous silicon and GaN. Multiphoton excitation and photoluminescence can give numerous complementary information about semiconductors not obtainable with one-photon, above-bandgap excitation.

  17. Numerical simulation of slow light in the semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wang, Zhaoying; Hu, Miaomiao; Jia, Dongfang; Yang, Tianxin

    2010-11-01

    Optoelectronic technology played a pivotal role in the unprecedented information revolution in the past two decades. One of the remaining grand challenges is the ability to store an optical signal in optical format. So slowing down the velocity of light have recently attracted substantial interest. In various mechanisms of slow light generation, semiconductor optical amplifier (SOA) attracts much attention because it offers the advantage of compactness, room temperature operation, electric-optical controllable and easy integration with existing optical communication systems. In this paper, slow light generation in SOA using four wave mixing (FWM) effect is analyzed. The dynamic changes of the signal light time delay with the outside controllable parameters, such as the injection current into SOA, the pump light power, the detuning frequency between pump light and signal light, are numerically solved on the basis of the theory of refractive modulation-index and the sub-sections model of SOA. This method has the advantage of accurate simulated results and providing the explicit relationships between the controllable parameters with the signal light time delay for the practical experiment.

  18. Phase mismatched optical parametric generation in semiconductor magnetoplasma

    NASA Astrophysics Data System (ADS)

    Dubey, Swati; Ghosh, S.; Jain, Kamal

    2017-05-01

    Optical parametric generation involves the interaction of pump, signal, and idler waves satisfying law of conservation of energy. Phase mismatch parameter plays important role for the spatial distribution of the field along the medium. In this paper instead of exactly matching wave vector, a small mismatch is admitted with a degree of phase velocity mismatch between these waves. Hence the medium must possess certain finite coherence length. This wave mixing process is well explained by coupled mode theory and one dimensional hydrodynamic model. Based on this scheme, expressions for threshold pump field and transmitted intensity have been derived. It is observed that the threshold pump intensity and transmitted intensity can be manipulated by varying doping concentration and magnetic field under phase mismatched condition. A compound semiconductor crystal of n-InSb is assumed to be shined at 77 K by a 10.6μm CO2 laser with photon energy well below band gap energy of the crystal, so that only free charge carrier influence the optical properties of the medium for the I.R. parametric generation in a semiconductor plasma medium. Favorable parameters were explored to incite the said process keeping in mind the cost effectiveness and conversion efficiency of the process.

  19. Photonic processing and realization of an all-optical digital comparator based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Singh, Simranjit; Kaur, Ramandeep; Kaler, Rajinder Singh

    2015-01-01

    A module of an all-optical 2-bit comparator is analyzed and implemented using semiconductor optical amplifiers (SOAs). By employing SOA-based cross phase modulation, the optical XNOR logic is used to get an A=B output signal, where as AB¯ and A¯B> logics operations are used to realize A>B and Aoptical high speed networks and computing systems.

  20. A scheme of developing frequency encoded tristate-optical logic operations using semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Garai, Sisir Kumar

    2010-03-01

    The ever increasing demand for very fast and agile optical networks requires very fast execution of different optical and logical operations as well as large information handling capacities at the same time. In conventional binary logic based operations the information is represented by two distinct states only (0 and 1 state). It limits the large information handling capacity and speed of different arithmetic and optical logic operations. Tristate based logic operations can be accommodated with optics successfully in data processing, as this type of operation can enhance the speed of operation as well as increase the information handling capacity. Here in this communication the author proposes a new method to implement all-optical different logic gates with tristate logic using the frequency-encoding principle. The frequency encoding/decoding based optical communication has distinctly great advantages because the frequency is the fundamental character of an optical signal and it preserves its identity throughout the communication. The principle of the rotation of the state of polarization of a probe beam through semiconductor optical amplifier (SOA), frequency routing property of an optical add/drop multiplexer (AD) and high frequency conversion property of reflecting semiconductor optical amplifiers (RSOA) have been exploited here to implement the desired AND, OR, NAND and NOR logic operations with tristate logic.

  1. A fiber-optical cable television system using a reflective semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Peng, P. C.; Shiu, K. C.; Liu, W. C.; Chen, K. J.; Lu, H. H.

    2013-02-01

    This investigation demonstrates a fiber-optical cable television system using a reflective semiconductor optical amplifier (RSOA) for uplink transmission. The downstream signal is cable television and the upstream signal is generated by remodulating the downstream signal via an RSOA with a radio-frequency signal. Favorable carrier-to-noise ratio, composite second-order, and composite triple beat are obtained for the downstream and the upstream signal is successfully transmitted over 60 km of single-mode fiber.

  2. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  3. Investigation of Surface Breakdown on Semiconductor Devices Using Optical Probing Techniques.

    DTIC Science & Technology

    1990-01-01

    18] L. Bovino , T. Burke, R. Youmans, M. Weiner, and J. Car, r, "Recent Advances in Optically C’ntrolled Bulk Semiconductor Switches," Digest of...Comp. Simul. 5 (3), 175 (1988). [321 M. Weiner, L. Bovino , R. Youmans, and T. Burke, "Modeling of the Optically Conrolled Semiconductor Switch," J

  4. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier.

    PubMed

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-27

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing.

  5. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    PubMed Central

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  6. Optical efficiency and gain dynamics of modelocked semiconductor disk lasers.

    PubMed

    Alfieri, C G E; Waldburger, D; Link, S M; Gini, E; Golling, M; Eisenstein, G; Keller, U

    2017-03-20

    Compact optically pumped passively modelocked semiconductor disk lasers (SDLs) based on active quantum wells (QWs) such as vertical external-cavity surface-emitting lasers (VECSELs) or modelocked integrated external-cavity surface-emitting lasers (MIXSELs) are wavelength-versatile sources that offer a unique combination of gigahertz pulse repetition rates and short pulse durations. In this paper, we present record-short pulses of 184 fs from a gigahertz MIXSEL emitting at a center wavelength of 1048 nm. This result comes at the expense of low optical-to-optical pump efficiency (<1%) and average output power limited to 115 mW. We experimentally observe that shorter pulses significantly reduce the macroscopic gain saturation fluence and develop a QW model based on rate equations to reproduce the gain saturation behavior and quantitatively explain the VECSEL and MIXSEL modelocking performances. We identify spectral hole burning as the main cause of the reduced gain at shorter pulse durations, which in combination with the short lifetime of the excited carriers strongly reduces the optical pump efficiency. Our better understanding will help to address these limitations in future ultrafast SDL designs.

  7. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  8. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  9. Application of semiconductor optical amplifier for mobile radio communications networks based on radio-over-fiber systems

    NASA Astrophysics Data System (ADS)

    Andreev, Vladimir A.; Burdin, Vladimir A.; Volkov, Kirill A.; Dashkov, Michael V.; Bukashkin, Sergei A.; Buzov, Alexander L.; Procopiev, Vladimir I.; Zharkov, Alexander D.

    2016-03-01

    The analysis of semiconductor optical amplifier applications in Radio-over-Fiber systems of telecommunication networks is given. In such systems semiconductor optical amplifier can be used for either amplification, modulation or detection, and also as an universal device.

  10. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  11. All-semiconductor metamaterial-based optical circuit board at the microscale

    NASA Astrophysics Data System (ADS)

    Min, Li; Huang, Lirong

    2015-07-01

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  12. Optical Properties of III-Mn-V Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Burch, Kenneth

    2008-03-01

    We discuss the important role optical studies have played in our understanding of the electronic structure of III-Mn-V ferromagnetic semiconductors. These extensive studies have established the electronic structure is strongly affected by the strength of the exchange between the Mn local moments and the holes they introduce. Particular focus is given to Ga1-xMnxAs, where spectroscopic studies suggest the metallic state is unconventional. Finally, we will detail our recent experiments into the ultrafast manipulation of magnetism on the nanoscale. This work is in collaboration with D.B. Shrekenhamer, E.J. Singley, D.N. Basov (University of California, San Diego) J. Stephens, S. Mack, R.K. Kawakami, D.D. Awschalom(University of California, Santa Barbara), B.L. Sheu, N. Samarth (Pennsylvania State University), F. Chen, A. Azad, J. O'Hara, A.M. Dattelbaum, G. Montano, S. Crooker, and A.J. Taylor (Los Alamos National Laboratory).

  13. Maximum statistical increase of optical absorption in textured semiconductor films

    NASA Astrophysics Data System (ADS)

    Deckman, H. W.; Roxlo, C. B.; Yablonovitch, E.

    1983-09-01

    It is noted that the complete statistical randomization of the direction of propagation of light trapped in semiconductor films can result in a large absorption enhancement. The absorption of a-SiH(x) films textured by the natural lithography process was evaluated using a calorimetric technique, photothermal deflection spectroscopy. It is shown that textures with feature sizes roughly equal to a wavelength of light can be fabricated which completely internally randomize incident light. Absorption enhancement factors up to 11.5 were obtained in experimental studies, which are in agreement with the predictions of statistical ray optics. It is concluded that these findings will be useful for the optimization of solar cells and other devices for which high levels of absorption are desired in thin films.

  14. S-Matrix Theory of Ultrafast Optical Phenomena in Semiconductors

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Alex V.

    1997-08-01

    A formalism for describing optical and transport properties of semiconductors excited by ultrashort laser pulses is presented. In contrast to existing theories, the quantum dynamics is described in terms of appropriately generalized single-particle wavefunctions (S-matrix) instead of the ensemble-averaged observables such as distribution functions. TheS-matrix is an operator that relates Heisenberg second quantization operators at finite times to their values in a vacuum state prior to excitation. The explicit form of theS-matrix is given by a perturbative expansion whose terms contain pairs of creation and annihilation operators. The coefficients of the expansion are found using a specially developed diagram technique for Coulomb systems. The first (c-number) term of this expansion is formed from single-electron wavefunctions in an optically excited noninteracting system. In real space, these wavefunctions are well-defined wavepackets whose properties can be investigated analytically. Linear and nonlinear ultrafast optical phenomena are controlled by overlap between conduction and valence band wavepackets. Specific cases of noninteracting electrons, coherent interactions leading to excitonic effects, and the incoherent scattering in the Born approximation are analysed within theS-matrix approach.

  15. A method of developing frequency encoded multi-bit optical data comparator using semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Garai, Sisir Kumar

    2011-02-01

    Optical data comparator is the part and parcel of arithmetic and logical unit of any optical data processor and it is working as a building block in a larger optical circuit, as an optical switch in all optical header processing and optical packet switching based all optical telecommunications system. In this article the author proposes a method of developing an all optical single bit comparator unit and subsequently extending the proposal to develop a n-bit comparator exploiting the nonlinear rotation of the state of polarization of the probe beam in semiconductor optical amplifier (SOA). Here the dataset to be compared are taken in frequency encoded/decoded form throughout the communication. The major advantages of frequency encoding over all other conventional techniques are that as the frequency of any signal is fundamental one so it can preserve its identity throughout the communication of optical signal and minimizes the probability of bit error problem. For frequency routing purpose optical add/drop multiplexer (ADM) is used which not only route the pump beams properly but also to amplify the pump beams efficiently. Switching speed of 'MZI-SOA switch' as well as SOA based switches are very fast with good on-off contrast ratio and as a result it is possible to obtain very fast action of optical data comparator.

  16. Optical spectroscopy of novel semiconductors in high magnetic fields

    NASA Astrophysics Data System (ADS)

    Ludwig, Jonathan

    Understanding new quantum phenomena and properties of new materials is the foundation of condensed matter physics. One can mention celebrated examples of integer and fractional quantum Hall effect, Aharonov-Bohm quantum interference effects, inventions of heterostructures and superlattices, and a recent discover of Dirac-like quasiparticles in atomically thin 2D crystals. Here we employ optical spectroscopy combined with large magnetic field and low temperatures to probe the electronic structure of several novel semiconductor materials. The discovery of graphene has opened the door to the study of other 2D materials. Here we focus on a new family of semiconducting layered 2D materials known as transition metal dichalcogenides (TMDs), which have recently emerged as a new class of direct bandgap 2D semiconductors with two degenerate, but non-equality valleys at the +K and -K points in the Brillouin zone. Due to the broken inversion symmetry in monolayer TMDs, this valley degree of freedom can be selectively addressed by optical helicity, opening the possibility for valleytronic and optoelectronic applications. By performing valley selective photoluminescence measurements on TMDs we demonstrate the lifting of the valley degeneracy and valley polarization in an applied perpendicular magnetic field. One of the most remarkable properties of graphene is its linear dispersion. Once relegated only to the realm of theoretical exploration, the past ten years has seen an explosion in the realization of new Dirac-like materials in condensed matter systems. One of the most important of these new Dirac-like materials is HgTe quantum wells (QWs). Here, we report on Landau level spectroscopy studies of a series of HgTe QWs grown near or at the critical well thickness, where the band gap ?vanishes. We observe a square root B dependence for the energy of the dominant cyclotron resonance (CR) transition over the broad range of magnetic fields, characteristic of Dirac fermions. While

  17. Fabrication and optical studies of semiconductor quantum well structures

    NASA Astrophysics Data System (ADS)

    Chang, Huicheng

    In an effort to investigate modulation doping and 2-dimensional electron gas in wide gap semiconductors and diluted magnetic semiconductors, we carried out systematic studies of n-type modulation doped ZnSe/Zn0.86Cd0.14Se and ZnSe/Zn0.825Cd 0.14Mn0.035Se single quantum well structures. The roles of spacers between doped barriers and undoped wells, as well as doping levels with regard to screening of excitons, were investigated. Low temperature photoluminescence studies were performed under magnetic fields up to 30 tesla. In the presence of a magnetic field, distinct features evolved from the broad luminescence band. These are attributed to interband transitions between electrons occupying Landau levels to photoexcited holes. An analysis of the Landau-level occupation as a function of magnetic field yields the electron sheet density. Modulation doping was also studied in the context of lasing characteristics, such as doping the barriers in the active region of ZnSe/ZnCdSe quantum well laser structures. With the aid of n-type modulation doping, the optical gain (∝ (fc - fv)) enhanced by the modifications of the Fermi-Dirac distribution functions for electrons and holes in the conduction and valence bands. Resulting threshold conditions were obtained to be 1/2 ˜ 1/3 of those without modulation doping in the active regions. The biexcitonic stimulated emission, ˜10 meV below the main excitonic emission, was also observed in undoped samples, but not in the modulation doped structures due to the instability of excitons caused by the two dimensional electron gas in the well. We also studied the lasing modes in broad-area, equilateral triangular laser cavities, which take advantage of total internal reflection at the cleaved facets of the cavity for circulating modes. A new approach is proposed to study optical modes in equilateral triangular cavities in an analytical form. The modes were obtained by examining the simplest optical paths inside the cavity, which yields

  18. An evidence of period doubling bifurcation in a dc driven semiconductor-gas discharge plasma

    NASA Astrophysics Data System (ADS)

    Mansuroglu, D.; Uzun-Kaymak, I. U.; Rafatov, I.

    2017-05-01

    We present an experimental study of nonlinearity observed in a dc driven semiconductor-gas discharge system. The plasma glow is generated using planar electrodes in a vacuum chamber filled with nitrogen gas at partial atmospheric pressure. The discharge behaves oscillatory in time, showing single and sometimes multiple periodicities in plasma current and voltage measurements. Harmonic frequency generations and period doubling cascade are investigated experimentally by varying the applied voltage. To identify the stability condition, numerical simulations are conducted using COMSOL® Multiphysics software. The discharge is modeled as a one dimensional plasma slab. Numerical results are in good agreement with the experimental measurements.

  19. Study of all-optical sampling using a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wu, Chen; Wang, Yongjun; Wang, Lina; Wang, Fu

    2017-03-01

    All-optical sampling is an important research content of all-optical signal processing. In recent years, the application of the semiconductor optical amplifier (SOA) in optical sampling has attracted lots of attention because of its small volume and large nonlinear coefficient. We propose an optical sampling model based on nonlinear polarization rotation effect of the SOA. The proposed scheme has the advantages of high sampling speed and small input pump power, and a transfer curve with good linearity was obtained through simulation. To evaluate the performance of sampling, we analyze the linearity and efficiency of sampling pulse considering the impact of pulse width and analog signal frequency. We achieve the sampling of analog signal to high frequency pulse and exchange the positions of probe light and pump light to study another sampling.

  20. All-optical flip-flop based on vertical cavity semiconductor optical amplifiers.

    PubMed

    Song, Deqiang; Gauss, Veronica; Zhang, Haijiang; Gross, Matthias; Wen, Pengyue; Esener, Sadik

    2007-10-15

    We report the operation of an all-optical set-reset (SR) flip-flop based on vertical cavity semiconductor optical amplifiers (VCSOAs). This flip-flop is cascadable, has low optical switching power (~10 microW), and has the potential to be integrated on a small footprint (~100 microm(2)). The flip-flop is composed of two cross-coupled electrically pumped VCSOA inverters and uses the principles of cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics to achieve flip-flop functionality. We believe that, when integrated on chip, this type of all-optical flip-flop opens new prospects for implementing all-optical fast memories and timing regeneration circuits.

  1. Isotope effects on the optical spectra of semiconductors

    NASA Astrophysics Data System (ADS)

    Cardona, Manuel; Thewalt, M. L. W.

    2005-10-01

    Since the end of the cold war, macroscopic amounts of separated stable isotopes of most elements have been available “off the shelf” at affordable prices. Using these materials, single crystals of many semiconductors have been grown and the dependence of their physical properties on isotopic composition has been investigated. The most conspicuous effects observed have to do with the dependence of phonon frequencies and linewidths on isotopic composition. These affect the electronic properties of solids through the mechanism of electron-phonon interaction, in particular, in the corresponding optical excitation spectra and energy gaps. This review contains a brief introduction to the history, availability, and characterization of stable isotopes, including their many applications in science and technology. It is followed by a concise discussion of the effects of isotopic composition on the vibrational spectra, including the influence of average isotopic masses and isotopic disorder on the phonons. The final sections deal with the effects of electron-phonon interaction on energy gaps, the concomitant effects on the luminescence spectra of free and bound excitons, with particular emphasis on silicon, and the effects of isotopic composition of the host material on the optical transitions between the bound states of hydrogenic impurities.

  2. Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

    NASA Astrophysics Data System (ADS)

    Raciti, R.; Bahariqushchi, R.; Summonte, C.; Aydinli, A.; Terrasi, A.; Mirabella, S.

    2017-06-01

    Determination of the optical bandgap (Eg) in semiconductor nanostructures is a key issue in understanding the extent of quantum confinement effects (QCE) on electronic properties and it usually involves some analytical approximation in experimental data reduction and modeling of the light absorption processes. Here, we compare some of the analytical procedures frequently used to evaluate the optical bandgap from reflectance (R) and transmittance (T) spectra. Ge quantum wells and quantum dots embedded in SiO2 were produced by plasma enhanced chemical vapor deposition, and light absorption was characterized by UV-Vis/NIR spectrophotometry. R&T elaboration to extract the absorption spectra was conducted by two approximated methods (single or double pass approximation, single pass analysis, and double pass analysis, respectively) followed by Eg evaluation through linear fit of Tauc or Cody plots. Direct fitting of R&T spectra through a Tauc-Lorentz oscillator model is used as comparison. Methods and data are discussed also in terms of the light absorption process in the presence of QCE. The reported data show that, despite the approximation, the DPA approach joined with Tauc plot gives reliable results, with clear advantages in terms of computational efforts and understanding of QCE.

  3. Optical contactless measurement of semiconductor thermoelectric transport properties (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Gibelli, Francois; Lombez, Laurent; Guillemoles, Jean-François

    2017-04-01

    In view of the combinatorial approach to discovery of new thermoelectric materials, it is highly desirable to have fast measurement techniques, if possible with capabilities to access local fluctuations or gradients in material properties. Using the generalized Planck& #39;s law of radiation [1] for fitting the photoluminescence spectra is the most appropriate technique to access the quasi Fermi level splitting and the temperature of the carriers in a semiconductor. These two parameters enable to determine Seebeck coefficients for the material as a new photo-Seebeck effect [2]. The absolutely calibrated photoluminescence intensity profile[3] with the spatial coordinates combined with Callen coupled transport equations and with the kinetic expression of the transport parameters under the relaxation time approximation enable us to determine: the Seebeck coefficient, the electrical conductivity, the thermal electron and hole conductivity, the mobilities, the diffusion coefficients and the heat transferred from the carriers to the lattice. All these parameters can be obtained either for electrons or for holes[4], even simultaneously, for intrinsic semiconductor in ambipolar regime. The method has been applied to a multi-quantum well structure of InGaAsP. Since the luminescence comes from the wells, this method enables to access the transport properties in the plane of the wells inside the whole structure. Since photoluminescence does not require p-n junction nor high electrical conductivities for the measurement, this optical contactless measurement technique of thermoelectrinc transport parameters involving quasi-equilibrium carriers enables to access properties inside a given layer of the whole structure or in materials with very low conductivities. We will also show the perspectives offered for the research of new thermoelectric materials. [1] Würfel, J. Phys. C : Solid State Phys., 1982 [2] Gibelli et al., Phys. Rev. Appl., 5 (2) 2016 Tauc, Czech J Phys, 1955 [3

  4. Non-adiabatic effects on the optical response of driven systems

    NASA Astrophysics Data System (ADS)

    Fregoso, Benjamin M.; Kolodrubetz, Michael; Moore, Joel

    Periodically driven systems have received renewed interest due to their capacity to engineer non-trivial effective Hamiltonians. A characteristic of such systems is how they respond to weak periodicity-breaking drive, as for example when a laser is pulsed instead of continuous wave. We develop semi-classical equations of motion of a wave packet in the presence of electric and magnetic fields which are turned on non-adiabatically. We then show the emergence of significant corrections to electronic collective excitations and optical responses of topological insulator surface states, Weyl metals and semiconductor mono-chalcogenides.

  5. Enhancing light slow-down in semiconductor optical amplifiers by optical filtering.

    PubMed

    Xue, Weiqi; Chen, Yaohui; Ohman, Filip; Sales, Salvador; Mørk, Jesper

    2008-05-15

    We show that the degree of light-speed control in a semiconductor optical amplifier can be significantly extended by the introduction of optical filtering. We achieve a phase shift of approximately 150 degrees at 19 GHz modulation frequency, corresponding to a several-fold increase of the absolute phase shift as well as the achievable bandwidth. We show good quantitative agreement with numerical simulations, including the effects of population oscillations and four-wave mixing, and provide a simple physical explanation based on an analytical perturbation approach.

  6. Theoretical investigation of magnetic and optical properties of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Proshchenko, Vitaly

    This thesis presents the theoretical investigation of physical properties of pure and transition metal doped semiconductor nanostructures. First we study optical and energy (the density of states) spectra for Cd mSem clusters of various sizes and shapes, such as spheres, cubes, nanorods, and nanotubes. This work requires a careful computational analysis where a proper exchange-correlation functional has to be chosen to fit the experimental data. The next part of the thesis deals with the magnetic properties of manganese doped CdSe, ZnSe, ZnS, and CdS quantum dots (QDs). We theoretically explain the effect of dual luminescence and show that in the case with CdSe quantum dots the luminescence becomes tunable by a QD size. We also study the concentration dependence of magnetic order and optical transitions in Mn doped CdSe nanocrystals. Room temperature d0 ferromagnetism is studied in ZnS quantum dots and nanowires in Chapter 4. To find the magnetization of the medium and large size nanocrystals we introduce the surface-bulk (SB) model. We show that the condensation of Zn vacancies into a single droplet takes place which leads to the week d0 ferromagnetism in ZnS nanocrystals. In the last Chapter we study electronic, optical, and charge transport properties of two new holey 2D materials, ELH-g-C2N-H and ELH-g-C2N-Br with hydrogen and bromine side-groups, respectively. Since the two 2D crystals under study have not been synthesized yet, we provide the stability analysis and prove that the calculated crystal structures correspond to the global energy minimum criterion.

  7. Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

    DOEpatents

    Duncan, Paul G.

    2002-01-01

    Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

  8. Active optical control of the terahertz reflectivity of high-resistivity semiconductors.

    PubMed

    Fekete, L; Hlinka, J Y; Kadlec, E; Kuzel, P; Mounaix, P

    2005-08-01

    We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high-resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R <3%) and highly reflective (R >85%) limits by means of the intensity and wavelength of the optical illumination.

  9. Coherent control of optical bistability and multistability in a triple semiconductor quantum well nanostructure

    NASA Astrophysics Data System (ADS)

    Raheli, A.; Afshari, H.; Hamedi, H. R.

    2015-10-01

    This paper deals with optical bistability (OB) and optical multistability (OM) behaviors for a triple semiconductor quantum well (SQW) structure driven coherently with two control fields, confined in a unidirectional ring cavity. The effect of different system parameters on OB and OM is explored. It is found that the threshold of onset of the OB can be controlled by manipulating the Rabi frequency of control fields. In this case, OB can be converted to OM. Then we investigate the effect of probe and control field detunings on OB behaviors. We found that the frequency detuning of probe field affects only the upper-lower branches of the OB curves but has no specific impact on OB threshold. By manipulating the first control field detuning, neither the OB threshold intensity nor upper-lower branches change. Finally, it is found that increasing the second control field detuning can reduce merely the OB threshold intensity, while no change happens in upper-lower OB branches. The results may be applicable in real experiments for realizing an all-optical switching or coding element in a solid-state platform.

  10. Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Shouting

    Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

  11. Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206

    SciTech Connect

    Sopori, B.

    2011-02-01

    This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

  12. A LATTICE THEORY OF THE ELECTRO-OPTIC EFFECTS IN SEMICONDUCTORS.

    DTIC Science & Technology

    A unified lattice theory of the electro - optic effect in semiconductor crystals, which encompasses the piezo-electric and elasto-optic effects, is...presented. Expressions are derived for the constant stress and constant strain electro - optic coefficients and the results are specialized to crystals of the zincblende structure. (Author)

  13. Optical and Phototransport Properties of Hydrogenated Amorphous Semiconductors

    NASA Astrophysics Data System (ADS)

    Li, Yuan-Min

    1990-01-01

    A study of the optical and phototransport properties of hydrogenated, tetrahedrally bonded amorphous semiconductor films produced by the radio frequency glow discharge technique is presented. The first part of this thesis reports an extensive investigation of hydrogenated and hydrogenated -fluorinated amorphous Si-Ge alloys, a-Si_{1-x}Ge_{x}:H and a-Si_{1-x}Ge_ {x}:H:F. The optical and vibrational properties of the two sets of alloys are described and compared. The photoconductivity of these materials is discussed with focus on the following two questions: (1) the drastic deterioration of the photoconductivity of a -Si_{1-x}Ge_{x }:H with increasing x; (2) the improved photoconductive response etamutau (quantum efficiency-mobility-lifetime product) in the fluoride {SiF_4 + GeF_4 + H_2 } derived alloys over that of the hydride {SiH_4 + GeH_4} derived alloys of roughly 50 at.% Ge, or with a bandgap near 1.4 eV. The phototransport properties of a-Si_ {1-x}Ge_{x}:H and a-Si _{1-x}Ge_{x }:H:F are analyzed in light of information provided by various types of electronic and structural characterization. Some specific models for the electronic band structure, charge transport, and recombination are probed. It is concluded that a uniform increase in the gap density of states can only partially account for the severe quality degradation of a a-Si_ {1-x}Ge_{x}:H(:F) relative to a-Si:H. The inferior photosensitivity of a-SiGe:H(:F) is caused, in part, by an increase in structural heterogeneity. Possible enhancement of recombination of excess carriers in the alloys due to clustered and/or charged defects, tunneling recombination, and reduced bandgap is assessed. The efficacy of hydrogen and fluorine in determining the properties of a-SiGe alloys is evaluated. It is found that the replacement of hydrogen by fluorine in a-SiGe can not be responsible for the observed improvement of etamu tau in the fluoride-derived a-Si_{0.5}Ge_{0.5}:H:F over the hydride-derived a-Si_ {0.5}Ge_{0

  14. X-ray and optical characterization of multilayer semiconductor waveguides

    NASA Astrophysics Data System (ADS)

    Durand, Olivier; Leo, Giuseppe; Masini, Gianlorenzo; Colace, Lorenzo; Marcadet, Xavier; Berger, Vincent; Assanto, Gaetano

    2001-05-01

    Nowadays refractive-index engineering has become a challenging area for experimentalists in semiconductor integrated optics, whereas design constraints are often more strict than both standard technology tolerances and model accuracies. In fact, it is crucial to non-destructively evaluate thicknesses and refractive indices of a multilayer waveguide independently, and to this aim we resorted to X-ray reflectometry and effective index measurements on MBE-grown AlGaAs waveguides, respectively. With the first technique interference effects (Kiessig fringes) arise, which are related to layer thicknesses. By standard data processing, thickness accuracies of +/- 0.05 nm are readily achieved. Effective index measurements were performed at several wavelengths on both slab and rib waveguides, through grating-assisted distributed coupling with both photoresist and etched gratings. Effective indices were determined with an absolute precision as good as 1/2000, adequate for phase matching in parametric devices. Merging thickness and effective index evaluations, the refractive indices of the constituent layers were determined with unprecedented accuracies, in substantial agreement with existing models.

  15. Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Abe, Katsumi; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

    2012-08-01

    We fabricated transparent amorphous oxide semiconductor superlattices composed of In-Ga-Zn-O (a-IGZO) well layers and Ga2O3 (a-Ga2O3) barrier layers, and investigated their optical absorption properties to examine energy quantization in the a-IGZO well layer. The Tauc gap of a-IGZO well layers monotonically increases with decreasing well thickness at ≤5 nm. The thickness dependence of the Tauc gap is quantitatively explained by a Krönig-Penny model employing a conduction band offset of 1.2 eV between the a-IGZO and the a-Ga2O3, and the effective masses of 0.35m0 for the a-IGZO well layer and 0.5m0 for the a-Ga2O3 barrier layer, where m0 is the electron rest mass. This result demonstrates the quantization in the a-IGZO well layer. The phase relaxation length of the a-IGZO is estimated to be larger than 3.5 nm.

  16. Development of integrated semiconductor optical sensors for functional brain imaging

    NASA Astrophysics Data System (ADS)

    Lee, Thomas T.

    Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

  17. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

    SciTech Connect

    Cundiff, Steven T.

    2016-05-03

    This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

  18. Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

    PubMed Central

    2014-01-01

    Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

  19. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGES

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  20. Continuously controlled optical band gap in oxide semiconductor thin films

    SciTech Connect

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.

  1. Optical driven electromechanical transistor based on tunneling effect.

    PubMed

    Jin, Leisheng; Li, Lijie

    2015-04-15

    A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic.

  2. Ultrafast multifunctional all-optical logic gates based on single semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Dong, Jianji; Zhang, Xinliang; Fu, Songnian; Wang, Yang; Huang, Dexiu

    2007-11-01

    We propose and demonstrate 40Gb/s multifunctional all-optical logic gates based on single semiconductor optical amplifier (SOA) and a blue shifted optical bandpass filter (OBF), suitable for both return-to-zero (RZ) and nonreturn-to-zero (NRZ) format. The logic functions NOT, NOR and OR of RZ format are realized at the OBF detuning of -0.15nm, - 0.22nm, and -0.44nm, respectively. The logic functions NOT and NOR of NRZ format are realized at the OBF detuning of -0.24nm. The measured ER is around 7dB and Q factor is over 6. Our scheme has the potential advantages of multilogic functions, simple structure, and high tolerance to input pulsewidth.

  3. Optical Harmonic Generation from Interfaces with Group IV Semiconductors.

    NASA Astrophysics Data System (ADS)

    Bottomley, David John

    Nonlinear optical techniques have been used to investigate the symmetry properties of interfaces between media comprising at least one Group IV semiconductor. Second harmonic generation (SHG) and third harmonic generation (THG) have been performed for s and p polarization states of the fundamental and harmonic beams as a function of sample azimuthal angle at a fixed fundamental wavelength of 775 nm. In addition to these experimental measurements, the thesis contains theoretical calculations of the optical harmonic response from such media with vicinal surfaces, that is surfaces miscut from a low-index face by {<}{~}10^ circ. The phenomenological theory of Sipe, Moss and van Driel (Phys. Rev. B 35, 1129 (1987)) for SHG and THG in reflection from the low-index faces of cubic centrosymmetric media has been extended to all faces of both cubic centrosymmetric and cubic noncentrosymmetric media. This theory is applied in many parts of the thesis to interpreting the symmetry information present in nonlinear optical data. Experimentally, measurements of SHG and THG from vicinal semiconductor wafers have been performed, and using the above theory the wafer orientations have been obtained to within +/-0.1^circ . In addition, the above theory has been applied to achieve an approximate separation of bulk and surface contributions to SHG measurements from vincinal Si(001) and Si(111) surfaces which Sipe et al. showed is not possible on the low-index faces. The SiO_2/Si interface on vicinal Si(001) has been studied with SHG, and evidence has been obtained for the presence of noncentrosymmetric phases of c-SiO_2 at this interface whose relative concentrations are influenced by the oxidation conditions. For oxidation temperatures below 600 ^circC, the SHG data is shown to be consistent with the presence of tridymite at the buried interface, whereas for oxidation at 900^ circC the SHG data is consistent with the presence of cristobalite. Finally, SHG has been measured from odd

  4. All-optical wavelength conversion by four-wave mixing in a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Lee, Robert Bumju

    1997-11-01

    Wavelength division multiplexed optical communication systems will soon become an integral part of commercial optical networks. A crucial new function required in WDM networks is wavelength conversion, the spectral translation of information-laden optical carriers, which enhances wavelength routing options and greatly improves network reconfigurability. One of several techniques for implementing this function is four-wave mixing utilizing ultra-fast intraband nonlinearities in semiconductor optical amplifiers. The effects of input power, noise prefiltering and semiconductor optical amplifier length on the conversion efficiency and optical signal-to-noise ratio were examined. Systems experiments have been conducted in which several important performance characteristics of the wavelength converter were studied. A bit-error-rate performance of <10-9 at 10 Gb/s was achieved for a record shift of 18 nm down in wavelength and 10 nm up in wavelength. Two cascaded conversions spanning a 40 km fiber link at 10 Gb/s are also demonstrated for conversions of up to 9 nm down and up in wavelength. The dynamic range of input signal power and its impact on the BER performance were studied at 2.5 Gb/s for both a single-channel conversion and a simultaneous 2-channel conversion. The crosstalk penalty induced by parasitic cross-gain modulation in 2-channel conversion is quantified. The spectral inversion which results from the conversion process is studied by time-resolved spectral analysis, and its application as a technique for dispersion compensation is demonstrated. Finally, the application of selective organometallic vapor-phase epitaxy for the formation of highly-uniform and densely-packed arrays of GaAs quantum dots is demonstrated. GaAs dots of 15-20 nm in base diameter and 8-10 nm in height terminated by slow-growth crystallographic planes were grown within dielectric-mask openings and characterized by atomic force microscopy.

  5. Optical properties of a quantum well driven by a THz electric field

    NASA Astrophysics Data System (ADS)

    Maslov, Alexey V.

    2001-07-01

    A systematic study of linear optical properties of a quantum well driven by a periodic electric field with period in the THz frequency range is performed. The THz field is oriented in the growth direction of the quantum well. We present a general approach to characterize the optical properties of a modulated medium and discuss the use of short optical pulses (shorter than the modulation period) to obtain the optical properties in the frequency domain. Mixing of the quantum well subbands (both in the conduction and valence band) for strong THz fields is treated in terms of the states dressed by the THz field. Relations between the dressed states and the optical properties of the quantum well are given. In particular, our approach allowed us to find simple relations for the efficiency of the energy conversion of the incident light into the sidebands and generalize the rate of the exciton radiative decay for the case of THz-dressed exciton. We also predict the effect of mutual transparency of several coherent laser beams which are resonant with different Fourier components of the dressed exciton state. Finally, results of realistic calculations of the absorption spectra of THz-field driven quantum wells using multisubband semiconductor Bloch equations in the linear regime are presented.

  6. Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

    SciTech Connect

    Keay, B.J.; Allen, S.J.; Campman, K.L.

    1995-12-31

    We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process.

  7. Terahertz optics: Terahertz-driven harmonics

    NASA Astrophysics Data System (ADS)

    Kim, K. Y.; You, Y. S.

    2014-02-01

    Researchers have demonstrated high-harmonic generation using strong terahertz pulses in a bulk solid without damaging it. The mechanism underpinning such an extreme nonlinearity also generates coherent electromagnetic radiation covering the terahertz, infrared and optical regions.

  8. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  9. Time-domain model of quantum-dot semiconductor optical amplifiers for wideband optical signals.

    PubMed

    Puris, D; Schmidt-Langhorst, C; Lüdge, K; Majer, N; Schöll, E; Petermann, K

    2012-11-19

    We present a novel theoretical time-domain model for a quantum dot semiconductor optical amplifier, that allows to simulate subpicosecond pulse propagation including power-based and phase-based effects. Static results including amplified spontaneous emission spectra, continuous wave amplification, and four-wave mixing experiments in addition to dynamic pump-probe simulations are presented for different injection currents. The model uses digital filters to describe the frequency dependent gain and microscopically calculated carrier-carrier scattering rates for the interband carrier dynamics. It can be used to calculate the propagation of multiple signals with different wavelengths or one wideband signal with high bitrate.

  10. Optoelectronic device simulation: Optical modeling for semiconductor optical amplifiers and solid state lighting

    NASA Astrophysics Data System (ADS)

    Wang, Dong-Xue (Michael)

    2006-07-01

    Recent advances in optoelectronic devices require sophisticated optical simulation and modeling. These tiny semiconductor device structures, such as semiconductor lasers and light emitting diodes (LED), not only need detailed electrical computation, such as band structure, carrier transportation, and electron-hole recombination under different external voltages, but also require comprehensive optical modeling, such as photon generation and propagation. Optical modeling also includes waveguide structure calculations, guided mode and leakage mode identification, as well far-field pattern prediction using optical ray tracing. In modeling semiconductor lasers, light emission and propagation can be treated using the single mode of wave optics, the so-called photon propagation equation coupled with carrier transport equations. These differential equations can be numerically solved using the Finite Difference Method (FDM). In the LED modeling, the main tools are based on optical ray tracing, and photons are treated as light emissions with random directions and polarizations. Optical waveguide theory is used to qualitatively analyze photon emissions inside a LED chip, and helps to design the LED device structure. One important area of semiconductor laser modeling is the optical simulation of the wavelength converter based on semiconductor optical amplifiers (SOA). This wavelength converter is a critical device in optical communication, and it can copy information from one wavelength to anther through cross-gain modulation. Some numerical methods have been developed to model the wavelength conversion. In these methods, solutions are found by solving differential equations in the time domain using FDM. In all previous models, the waveguide internal loss is assumed uniform across the cavity of the SOA, or the gain coefficient is based on the polynomial approximation method, i.e., the gain coefficient is assumed proportional to the difference between the carrier and

  11. Cell Signaling Experiments Driven by Optical Manipulation

    PubMed Central

    Difato, Francesco; Pinato, Giulietta; Cojoc, Dan

    2013-01-01

    Cell signaling involves complex transduction mechanisms in which information released by nearby cells or extracellular cues are transmitted to the cell, regulating fundamental cellular activities. Understanding such mechanisms requires cell stimulation with precise control of low numbers of active molecules at high spatial and temporal resolution under physiological conditions. Optical manipulation techniques, such as optical tweezing, mechanical stress probing or nano-ablation, allow handling of probes and sub-cellular elements with nanometric and millisecond resolution. PicoNewton forces, such as those involved in cell motility or intracellular activity, can be measured with femtoNewton sensitivity while controlling the biochemical environment. Recent technical achievements in optical manipulation have new potentials, such as exploring the actions of individual molecules within living cells. Here, we review the progress in optical manipulation techniques for single-cell experiments, with a focus on force probing, cell mechanical stimulation and the local delivery of active molecules using optically manipulated micro-vectors and laser dissection. PMID:23698758

  12. Laser-driven polyplanar optic display

    SciTech Connect

    Veligdan, J.T.; Biscardi, C.; Brewster, C.; DeSanto, L.; Beiser, L.

    1998-01-01

    The Polyplanar Optical Display (POD) is a unique display screen which can be used with any projection source. This display screen is 2 inches thick and has a matte-black face which allows for high contrast images. The prototype being developed is a form, fit and functional replacement display for the B-52 aircraft which uses a monochrome ten-inch display. The new display uses a 200 milliwatt green solid-state laser (532 nm) as its optical source. In order to produce real-time video, the laser light is being modulated by a Digital Light Processing (DLP) chip manufactured by Texas Instruments, Inc. A variable astigmatic focusing system is used to produce a stigmatic image on the viewing face of the POD. In addition to the optical design, the authors discuss the DLP chip, the optomechanical design and viewing angle characteristics.

  13. Tunable optical delay via carrier induced exciton dephasing in semiconductor quantum wells.

    PubMed

    Sarkar, Susanta; Guo, Yan; Wang, Hailin

    2006-04-03

    We report the experimental realization of a tunable optical delay by exploiting unique incoherent nonlinear optical processes in semiconductors. The tunable optical delay takes advantage of the strong Coulomb interactions between excitons and free carriers and uses optical injection of free carriers to broaden and bleach an exciton absorption resonance. Fractional delay exceeding 200% has been obtained for an 8 ps optical pulse propagating near the heavy-hole excitonic transition in a GaAs quantum well structure. Tunable optical delay based on optical injection of free carriers avoids strong absorption of the pump beam and is also robust against variations in the frequency of the pump beam.

  14. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  15. Thermally driven continuous-wave and pulsed optical vortex.

    PubMed

    Ding, Yitian; Xu, Miaomiao; Zhao, Yongguang; Yu, Haohai; Zhang, Huaijin; Wang, Zhengping; Wang, Jiyang

    2014-04-15

    We demonstrated a continuous-wave (cw) and pulsed optical vortex with topological charges driven by heat generated during the lasing process without introducing the astigmatism effect and reducing lasing efficiency. During the lasing process, the topological charges were changeable by the thermal-induced lens and selected by the mode-matching between the pump and oscillating beams. With a graphene sample as the saturable absorber, a pulsed optical vortex was achieved at a wavelength of 1.36 μm, which identified that graphene could be used as a pulse modulator for the generation of a pulsed optical vortex. Thermally driven cw and pulsed optical vortexes should have various promising applications based on the compact structure, changeable topological charges, and specific wavelength.

  16. Optical Properties of Small Band Gap Semiconductors Subject to Laser Excitation. Nonlinear Infrared Properties of Semiconductors.

    DTIC Science & Technology

    1982-01-01

    the Ill-V semiconductors with large spin -orbit splitting . These included GaAs, G&Sb, InAs, AlSb as w ll as Ge. The theory was further extended to...includle Lhe effects of the spin orbit split -off valence band in publication 12. E. 7hory of Pump and Probe Experiments To develop an understanding of the...James and D. L. Smith, "Absorption of High-Intensity 002 Laser Light in p-Type Semiconductors with Small Spin -Orbit Splittings ", J. Appi. Phys. S2

  17. Study on optical frequency domain reflectometry based on tunable semiconductor laser

    NASA Astrophysics Data System (ADS)

    Li, Guoyu; Liu, Tongqing; Zhang, Liwei; Guan, Bai-ou

    2009-11-01

    The relation of beat frequency, sweep rate, optical frequency modulation excursion and length of fiber under test (FUT) based on tunable semiconductor laser is studied. Experimental results show that the frequency of beat signal will increase when the length of the FUT, optical frequency modulation excursion or sweep rate increases.

  18. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    SciTech Connect

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-08-23

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  19. Electronic, optical, and spectroscopic analysis of TBADN organic semiconductor: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Orek, Cahit; Gündüz, Bayram; Kaygili, Omer; Bulut, Niyazi

    2017-06-01

    In this study, the electronic, optical and spectroscopic properties of 2-tert-Butyl-9,10-di(naphth-2-yl) anthracene (TBADN) semiconductor in different solvents were investigated by experimentally and computationally. Obtained theoretical and experimental UV-VIS spectra of the TBADN were found to be quite in good agreement and can be controlled with various solvents. Refractive index values of the TBADN semiconductor in different solvents were experimentally measured and calculated theoretically. Finally, the FTIR spectra of the TBADN organic semiconductor in different solvents were investigated by theoretical and experimental methods. It was found that the band gap is sensitive to the concentration of the solute.

  20. Formation and all-optical control of optical patterns in semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Binder, R.; Tsang, C. Y.; Tse, Y. C.; Luk, M. H.; Kwong, N. H.; Chan, Chris K. P.; Leung, P. T.; Lewandowski, P.; Schumacher, Stefan; Lafont, O.; Baudin, E.; Tignon, J.

    2016-05-01

    Semiconductor microcavities offer a unique way to combine transient all-optical manipulation of GaAs quantum wells with the benefits of structural advantages of microcavities. In these systems, exciton-polaritons have dispersion relations with very small effective masses. This has enabled prominent effects, for example polaritonic Bose condensation, but it can also be exploited for the design of all-optical communication devices. The latter involves non-equilibrium phase transitions in the spatial arrangement of exciton-polaritons. We consider the case of optical pumping with normal incidence, yielding a spatially homogeneous distribution of exciton-polaritons in optical cavities containing the quantum wells. Exciton-exciton interactions can trigger instabilities if certain threshold behavior requirements are met. Such instabilities can lead, for example, to the spontaneous formation of hexagonal polariton lattices (corresponding to six-spot patterns in the far field), or to rolls (corresponding to two-spot far field patterns). The competition among these patterns can be controlled to a certain degree by applying control beams. In this paper, we summarize the theory of pattern formation and election in microcavities and illustrate the switching between patterns via simulation results.

  1. Ultrafast all-optical switching with photonic nanojets and semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2016-03-01

    The potential of terabit-per-second fibre optics can be unlocked with emerging all-optical networks and processors employing all-optical switching. To be effective, all-optical switching must support operations with femtojoule switching energies and femtosecond switching times. With this in mind, this work studies geometrical and material characteristics for all-optical switching and develops a new all-optical switching architecture. A nanojet focal geometry is applied, in the form of dielectric spheres, to direct high-intensity photonic nanojets into peripheral semiconductors. Theoretical and experimental analyses demonstrate photonic nanojets, enabling femtojoule switching energies through localized photoinjection, and semiconductor nanoparticles, enabling femtosecond switching times through localized recombination.

  2. Fully tunable 360° microwave photonic phase shifter based on a single semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2011-08-01

    A fully tunable microwave photonic phase shifter involving a single semiconductor optical amplifier (SOA) is proposed and demonstrated. 360° microwave phase shift has been achieved by tuning the carrier wavelength and the optical input power injected in an SOA while properly profiting from the dispersion feature of a conveniently designed notch filter. It is shown that the optical filter can be advantageously employed to switch between positive and negative microwave phase shifts. Numerical calculations corroborate the experimental results showing an excellent agreement.

  3. An analytical study on bistability of Fabry-Perot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wang, Gang; Chen, Shuqiang; Yang, Huajun

    2016-09-01

    Optical bistabilities have been considered to be useful for sensor applications. As a typical nonlinear device, Fabry-Perot semiconductor optical amplifiers (FPSOAs) exhibit bistability under certain conditions. In this paper, the bistable characteristics in FPSOAs are investigated theoretically. Based on Adams's relationship between the incident optical intensity I in and the z-independent average intracavity intensity I av, an analytical expression of the bistable loop width in SOAs is derived. Numerical simulations confirm the accuracy of the analytical result.

  4. Gravity-driven convection studies in compound semiconductor crystal growth by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Zoutendyk, J. A.; Akutagawa, W. M.

    1982-01-01

    Experimental results are summarized, and it is pointed out that gravity-driven convection can alter the diffusive-advective mass transport behavior in the growth of crystals by physical vapor transport. Specially designed and constructed transparent furnaces are described which are being used to study the effects of gravity in the crystal growth of the compound semiconductors PbTe and CdTe. The theory underlying vapor transport behavior is reviewed, with attention given to the vapor-solid behavior of compound materials, to one-dimensional mass transport, and to gravity-induced (natural) convection. In the transparent furnaces, the quartz capillary tube mounted along the axis of the main quartz ampoule is used to measure the temperature at the growth surface (vapor-solid crystal interface) and the source, as well as the complete temperature profile along the axis of the tube. The light-pipe works to remove heat from the growth end of the ampoule by radiative heat transfer. The ampoules are sealed after being evacuated to the low 10 to the -8th torr range with a cryogenic vacuum pump.

  5. Nanoscale-driven crystal growth of hexaferrite heterostructures for magnetoelectric tuning of microwave semiconductor integrated devices.

    PubMed

    Hu, Bolin; Chen, Zhaohui; Su, Zhijuan; Wang, Xian; Daigle, Andrew; Andalib, Parisa; Wolf, Jason; McHenry, Michael E; Chen, Yajie; Harris, Vincent G

    2014-11-25

    A nanoscale-driven crystal growth of magnetic hexaferrites was successfully demonstrated at low growth temperatures (25-40% lower than the temperatures required often for crystal growth). This outcome exhibits thermodynamic processes of crystal growth, allowing ease in fabrication of advanced multifunctional materials. Most importantly, the crystal growth technique is considered theoretically and experimentally to be universal and suitable for the growth of a wide range of diverse crystals. In the present experiment, the conical spin structure of Co2Y ferrite crystals was found to give rise to an intrinsic magnetoelectric effect. Our experiment reveals a remarkable increase in the conical phase transition temperature by ∼150 K for Co2Y ferrite, compared to 5-10 K of Zn2Y ferrites recently reported. The high quality Co2Y ferrite crystals, having low microwave loss and magnetoelectricity, were successfully grown on a wide bandgap semiconductor GaN. The demonstration of the nanostructure materials-based "system on a wafer" architecture is a critical milestone to next generation microwave integrated systems. It is also practical that future microwave integrated systems and their magnetic performances could be tuned by an electric field because of the magnetoelectricity of hexaferrites.

  6. Influence of optical material properties on strong coupling in organic semiconductor based microcavities

    NASA Astrophysics Data System (ADS)

    Tropf, Laura; Dietrich, Christof P.; Herbst, Stefanie; Kanibolotsky, Alexander L.; Skabara, Peter J.; Würthner, Frank; Samuel, Ifor D. W.; Gather, Malte C.; Höfling, Sven

    2017-04-01

    The optical properties of organic semiconductors are generally characterised by a number of material specific parameters, including absorbance, photoluminescence quantum yield, Stokes shift, and molecular orientation. Here, we study four different organic semiconductors and compare their optical properties to the characteristics of the exciton-polaritons that are formed when these materials are introduced into metal-clad microcavities. We find that the strength of coupling between cavity photons and excitons is clearly correlated with the absorptivity of the material. In addition, we show that anisotropy strongly affects the characteristics of the formed exciton-polaritons.

  7. Phase noise reduction of a semiconductor laser in a composite optical phase-locked loop

    NASA Astrophysics Data System (ADS)

    Satyan, Naresh; Sendowski, Jacob; Vasilyev, Arseny; Rakuljic, George; Yariv, Amnon

    2010-12-01

    The bandwidth and residual phase noise of optical phase-locked loops (OPLLs) using semiconductor lasers are typically constrained by the nonuniform frequency modulation response of the laser, limiting their usefulness in a number of applications. It is shown in this work that additional feedback control using an optical phase modulator improves the coherence between the master and slave lasers in the OPLL by achieving bandwidths determined only by the propagation delay in the loop. A phase noise reduction by more than a factor of two is demonstrated in a proof-of-concept experiment using a commercial distributed feedback semiconductor laser.

  8. Ultrafast switching based on field optical bistability in nano-film of semiconductor

    NASA Astrophysics Data System (ADS)

    Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

    2016-09-01

    Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.

  9. Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

    NASA Astrophysics Data System (ADS)

    Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

    2016-05-01

    It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

  10. Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors

    SciTech Connect

    Malevich, Y. V. Adomavičius, R.; Krotkus, A.; Malevich, V. L.

    2014-02-21

    Transient photoconductivity in cubic semiconductors InGaAs and InAs excited by a femtosecond laser pulse in the presence of a uniform dc electric field has been studied with the use of the Monte Carlo simulation by taking into account optical alignment of photoexcited electrons over their momenta. Simulations show that due to the optical alignment effect and energy dependence of the electron mobility, the transient photoconductivity in cubic semiconductors becomes anisotropic during the first few picoseconds after optical excitation. The magnitude of this anisotropy reaches its peak when the excess energy of the optically excited electrons approaches the threshold for the intervalley transfer. It has also been found that when the electrons are excited near the threshold energy for the intervalley transfer, the component of the transient photocurrent directed along the dc field for a short time after the end of the femtosecond optical pulse can become negative. The anisotropy of the transient photoconductivity has been investigated experimentally on (001) InGaAs sample by the optical pump - terahertz-probe technique. Optically induced changes in terahertz pulse amplitude were found to be dependent on the direction of terahertz field relative to the polarization of the optical pump pulse and to the crystallographic axes of the semiconductor. Experimental data have been explained in terms of the transient anisotropic photoconductivity and correlate with the results of the Monte Carlo simulation.

  11. Anisotropic picosecond photoconductivity caused by optical alignment of electron momenta in cubic semiconductors

    NASA Astrophysics Data System (ADS)

    Malevich, Y. V.; Adomavičius, R.; Krotkus, A.; Malevich, V. L.

    2014-02-01

    Transient photoconductivity in cubic semiconductors InGaAs and InAs excited by a femtosecond laser pulse in the presence of a uniform dc electric field has been studied with the use of the Monte Carlo simulation by taking into account optical alignment of photoexcited electrons over their momenta. Simulations show that due to the optical alignment effect and energy dependence of the electron mobility, the transient photoconductivity in cubic semiconductors becomes anisotropic during the first few picoseconds after optical excitation. The magnitude of this anisotropy reaches its peak when the excess energy of the optically excited electrons approaches the threshold for the intervalley transfer. It has also been found that when the electrons are excited near the threshold energy for the intervalley transfer, the component of the transient photocurrent directed along the dc field for a short time after the end of the femtosecond optical pulse can become negative. The anisotropy of the transient photoconductivity has been investigated experimentally on (001) InGaAs sample by the optical pump - terahertz-probe technique. Optically induced changes in terahertz pulse amplitude were found to be dependent on the direction of terahertz field relative to the polarization of the optical pump pulse and to the crystallographic axes of the semiconductor. Experimental data have been explained in terms of the transient anisotropic photoconductivity and correlate with the results of the Monte Carlo simulation.

  12. Tangled nonlinear driven chain reactions of all optical singularities

    NASA Astrophysics Data System (ADS)

    Vasil'ev, V. I.; Soskin, M. S.

    2012-03-01

    Dynamics of polarization optical singularities chain reactions in generic elliptically polarized speckle fields created in photorefractive crystal LiNbO3 was investigated in details Induced speckle field develops in the tens of minutes scale due to photorefractive 'optical damage effect' induced by incident beam of He-Ne laser. It was shown that polarization singularities develop through topological chain reactions of developing speckle fields driven by photorefractive nonlinearities induced by incident laser beam. All optical singularities (C points, optical vortices, optical diabolos,) are defined by instantaneous topological structure of the output wavefront and are tangled by singular optics lows. Therefore, they have develop in tangled way by six topological chain reactions driven by nonlinear processes in used nonlinear medium (photorefractive LiNbO3:Fe in our case): C-points and optical diabolos for right (left) polarized components domains with orthogonally left (right) polarized optical vortices underlying them. All elements of chain reactions consist from loop and chain links when nucleated singularities annihilated directly or with alien singularities in 1:9 ratio. The topological reason of statistics was established by low probability of far enough separation of born singularities pair from existing neighbor singularities during loop trajectories. Topology of developing speckle field was measured and analyzed by dynamic stokes polarimetry with few seconds' resolution. The hierarchy of singularities govern scenario of tangled chain reactions was defined. The useful space-time data about peculiarities of optical damage evolution were obtained from existence and parameters of 'islands of stability' in developing speckle fields.

  13. Driven optical matter: Dynamics of electrodynamically coupled nanoparticles in an optical ring vortex.

    PubMed

    Figliozzi, Patrick; Sule, Nishant; Yan, Zijie; Bao, Ying; Burov, Stanislav; Gray, Stephen K; Rice, Stuart A; Vaikuntanathan, Suriyanarayanan; Scherer, Norbert F

    2017-02-01

    To date investigations of the dynamics of driven colloidal systems have focused on hydrodynamic interactions and often employ optical (laser) tweezers for manipulation. However, the optical fields that provide confinement and drive also result in electrodynamic interactions that are generally neglected. We address this issue with a detailed study of interparticle dynamics in an optical ring vortex trap using 150-nm diameter Ag nanoparticles. We term the resultant electrodynamically interacting nanoparticles a driven optical matter system. We also show that a superior trap is created by using a Au nanoplate mirror in a retroreflection geometry, which increases the electric field intensity, the optical drive force, and spatial confinement. Using nanoparticles versus micron sized colloids significantly reduces the surface hydrodynamic friction allowing us to access small values of optical topological charge and drive force. We quantify a further 50% reduction of hydrodynamic friction when the nanoparticles are driven over the Au nanoplate mirrors versus over a mildly electrostatically repulsive glass surface. Further, we demonstrate through experiments and electrodynamics-Langevin dynamics simulations that the optical drive force and the interparticle interactions are not constant around the ring for linearly polarized light, resulting in a strong position-dependent variation in the nanoparticle velocity. The nonuniformity in the optical drive force is also manifest as an increase in fluctuations of interparticle separation, or effective temperature, as the optical driving force is increased. Finally, we resolve an open issue in the literature on periodic modulation of interparticle separation with comparative measurements of driven 300-nm-diameter polystyrene beads that also clearly reveal the significance of electrodynamic forces and interactions in optically driven colloidal systems. Therefore, the modulations in the optical forces and electrodynamic interactions

  14. Driven optical matter: Dynamics of electrodynamically coupled nanoparticles in an optical ring vortex

    NASA Astrophysics Data System (ADS)

    Figliozzi, Patrick; Sule, Nishant; Yan, Zijie; Bao, Ying; Burov, Stanislav; Gray, Stephen K.; Rice, Stuart A.; Vaikuntanathan, Suriyanarayanan; Scherer, Norbert F.

    2017-02-01

    To date investigations of the dynamics of driven colloidal systems have focused on hydrodynamic interactions and often employ optical (laser) tweezers for manipulation. However, the optical fields that provide confinement and drive also result in electrodynamic interactions that are generally neglected. We address this issue with a detailed study of interparticle dynamics in an optical ring vortex trap using 150-nm diameter Ag nanoparticles. We term the resultant electrodynamically interacting nanoparticles a driven optical matter system. We also show that a superior trap is created by using a Au nanoplate mirror in a retroreflection geometry, which increases the electric field intensity, the optical drive force, and spatial confinement. Using nanoparticles versus micron sized colloids significantly reduces the surface hydrodynamic friction allowing us to access small values of optical topological charge and drive force. We quantify a further 50% reduction of hydrodynamic friction when the nanoparticles are driven over the Au nanoplate mirrors versus over a mildly electrostatically repulsive glass surface. Further, we demonstrate through experiments and electrodynamics-Langevin dynamics simulations that the optical drive force and the interparticle interactions are not constant around the ring for linearly polarized light, resulting in a strong position-dependent variation in the nanoparticle velocity. The nonuniformity in the optical drive force is also manifest as an increase in fluctuations of interparticle separation, or effective temperature, as the optical driving force is increased. Finally, we resolve an open issue in the literature on periodic modulation of interparticle separation with comparative measurements of driven 300-nm-diameter polystyrene beads that also clearly reveal the significance of electrodynamic forces and interactions in optically driven colloidal systems. Therefore, the modulations in the optical forces and electrodynamic interactions

  15. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  16. Optically induced transport through semiconductor-based molecular electronics

    NASA Astrophysics Data System (ADS)

    Li, Guangqi; Fainberg, Boris D.; Seideman, Tamar

    2015-04-01

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  17. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  18. Distributed fibre optic strain measurements on a driven pile

    NASA Astrophysics Data System (ADS)

    Woschitz, Helmut; Monsberger, Christoph; Hayden, Martin

    2016-05-01

    In civil engineering pile systems are used in unstable areas as a foundation of buildings or other structures. Among other parameters, the load capacity of the piles depends on their length. A better understanding of the mechanism of load-transfer to the soil would allow selective optimisation of the system. Thereby, the strain variations along the loaded pile are of major interest. In this paper, we report about a field trial using an optical backscatter reflectometer for distributed fibre-optic strain measurements along a driven pile. The most significant results gathered in a field trial with artificial pile loadings are presented. Calibration results show the performance of the fibre-optic system with variations in the strain-optic coefficient.

  19. Rhythmic motion of colloidal particles driven by optical force

    NASA Astrophysics Data System (ADS)

    Saito, Keita; Kimura, Yasuyuki

    2017-04-01

    We observed the collective motion of colloidal particles moving along a circular path in water as a model system of artificial active matter. The particles were driven by optical vortex using holographic optical tweezer. They exhibit rhythmic motion with spontaneous formation of clusters and their dissociation by hydrodynamic interaction. The hydrodynamic interaction in spatially confined system alter their rhythmic motion dramatically. For example, we found that the relative magnitude of the angular velocity for a doublet to a singlet reversed in free space and in strongly confined system. The transition of rhythmic motions was observed by varying spatial confinement.

  20. Symmetry driven control of optical properties in WO3 films

    NASA Astrophysics Data System (ADS)

    Herklotz, A.; Rus, S. F.; KC, S.; Cooper, V. R.; Huon, A.; Guo, E.-J.; Ward, T. Z.

    2017-06-01

    In this work, we demonstrate that the optical bandgap of WO3 films can be continuously controlled through uniaxial strain induced by low-energy helium implantation. The insertion of He into epitaxially grown and coherently strained WO3 films can be used to induce single axis out-of-plane lattice expansion of up to 2%. Ellipsometric spectroscopy reveals that the optical bandgap is reduced by about 0.18 eV per percent expansion of the out-of-plane unit cell length. Density functional theory calculations show that this response is a direct result of changes in orbital degeneracy driven by changes in the octahedral rotations and tilts.

  1. Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

  2. Multi-dimensional coherent optical spectroscopy of semiconductor nanostructures: Collinear and non-collinear approaches

    SciTech Connect

    Nardin, Gaël; Li, Hebin; Autry, Travis M.; Moody, Galan; Singh, Rohan; Cundiff, Steven T.

    2015-03-21

    We review our recent work on multi-dimensional coherent optical spectroscopy (MDCS) of semiconductor nanostructures. Two approaches, appropriate for the study of semiconductor materials, are presented and compared. A first method is based on a non-collinear geometry, where the Four-Wave-Mixing (FWM) signal is detected in the form of a radiated optical field. This approach works for samples with translational symmetry, such as Quantum Wells (QWs) or large and dense ensembles of Quantum Dots (QDs). A second method detects the FWM in the form of a photocurrent in a collinear geometry. This second approach extends the horizon of MDCS to sub-diffraction nanostructures, such as single QDs, nanowires, or nanotubes, and small ensembles thereof. Examples of experimental results obtained on semiconductor QW structures are given for each method. In particular, it is shown how MDCS can assess coupling between excitons confined in separated QWs.

  3. An ab initio based approach to optical properties of semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bannow, L. C.; Rosenow, P.; Springer, P.; Fischer, E. W.; Hader, J.; Moloney, J. V.; Tonner, R.; Koch, S. W.

    2017-09-01

    A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band {k}\\cdot {p}-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function approach is applied to model the quantum well (QW) using the {k}\\cdot {p}-wave functions and eigenvalues as starting point for calculating the optical properties of the heterostructure. It is shown that Luttinger parameters derived from band structures computed with the TB09 density functional reproduce extrapolated values. The procedure is illustrated by computing the absorption spectra for a (AlGa)As/Ga(AsP)/(AlGa)As QW system with varying phosphide content in the active layer.

  4. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    PubMed

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

  5. Fast optical source for quantum key distribution based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Jofre, M.; Gardelein, A.; Anzolin, G.; Amaya, W.; Campmany, J.; Ursin, R.; Penate, L.; Lopez, D.; San Juan, J. L.; Carrasco, J. A.; Garcia, F.; Torcal-Milla, F. J.; Sanchez-Brea, L. M.; Bernabeu, E.; Perdigues, J. M.; Jennewein, T.; Torres, J. P.; Mitchell, M. W.; Pruneri, V.

    2011-02-01

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as $1.14\\times 10^{-2}$ while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

  6. Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells

    NASA Astrophysics Data System (ADS)

    H, R. Hamedi; M, R. Mehmannavaz; Hadi, Afshari

    2015-08-01

    The effects of optical field on the phenomenon of optical bistability (OB) are investigated in a K-type semiconductor double quantum well (SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing. Project supported by the Lithuanian Research Council (Grant No. VP1-3.1-ŠM-01-V-03-001).

  7. Screening effect on the exciton mediated nonlinear optical susceptibility of semiconductor quantum dots.

    PubMed

    Bautista, Jessica E Q; Lyra, Marcelo L; Lima, R P A

    2014-11-17

    We study the exciton contribution to the third-order optical susceptibility of one-dimensional semiconductor quantum dots and show that the screening of the electron-hole interaction has a strong influence on the nonlinear optical properties in the weak confinement regime. Based on a density matrix formulation, we estimate the spectrum of the third-order optical susceptibility and its contribution to the refraction index and absorption coefficient. In particular, we show that the multipeaked spectrum of the nonlinear susceptibility, which results from the hydrogenoid character of the exciton eigenstates for a purely Coulombian electron-hole coupling, is reverted towards a single peaked structure as the interaction becomes strongly screened, thus leading to a substantial enhancement of the nonlinear optical properties of semiconductor quantum dots.

  8. Electronic and optical properties of semiconductors: A study based on the empirical tight binding model

    SciTech Connect

    Lew, Yan Voon, L.C.

    1993-01-01

    This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. The author has extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents. The second part of this work examines a number of applications of the theory. A new microscopic derivation of the intervalley deformation potentials is presented within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. The author has also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new [open quotes]type-II[close quotes] lasing mechanism in short-period GaAs/AlAs super-lattices. As for the author's work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band effective-mass calculations of other groups, the more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.

  9. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

    NASA Astrophysics Data System (ADS)

    Li, Min; Mi, Xian-Wu

    2009-12-01

    This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it.

  10. Specific features of two-photon optical nutation in a system of biexcitons in semiconductors

    SciTech Connect

    Khadzhi, P. I. Vasil'ev, V. V.

    2007-05-15

    Specific features of two-photon nutation in a system of coherent biexcitons in CuCl-type semiconductors are studied. It is shown that, depending on the parameters of the system, nutation represents a process of periodic conversion of photon pairs into biexcitons and vice versa. The possibility of phase control of optical nutation is predicted.

  11. Experimental investigation of chirp properties induced by signal amplification in quantum-dot semiconductor optical amplifiers.

    PubMed

    Matsuura, Motoharu; Ohta, Hiroaki; Seki, Ryota

    2015-03-15

    We experimentally show the dynamic frequency chirp properties induced by signal amplification in a quantum-dot semiconductor optical amplifier (QD-SOA) for the first time. We also compare the red and blue chirp peak values and temporal chirp changes while changing the gain and injected signal powers of the QD-SOA with those of a common SOA.

  12. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Ye, Nan; Liu, Yang; Wang, Baojun; Zhou, Daibing; Pang, Jiaoqing; Zhao, Lingjuan; Wang, Wei

    2010-12-01

    More than 11mW output powers for all wavelengths from the fiber and over 49 nm range tuning in sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier which is enabling access to 110 ITU 50GHz channels is demonstrated. Tilted amplifier and anti-reflection facet coating are used to suppress reflection.

  13. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Ye, Nan; Liu, Yang; Wang, BaoJun; Zhou, DaiBing; Pang, JiaoQing; Zhao, LingJuan; Wang, Wei

    2011-01-01

    More than 11mW output powers for all wavelengths from the fiber and over 49 nm range tuning in sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier which is enabling access to 110 ITU 50GHz channels is demonstrated. Tilted amplifier and anti-reflection facet coating are used to suppress reflection.

  14. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  15. Coherent Optical Control of Electronic Excitations in Wide-Band-Gap Semiconductor Structures

    DTIC Science & Technology

    2015-05-01

    ABSTRACT The main objective of this research is to study coherent quantum effects , such as Rabi oscillations in optical spectra of wide- band-gap...DRI) Research Objectives 1 2. Temperature Effects in the Kinetics of Photoexcited Carriers in Wide- Band-Gap Semiconductors 2 2.1 Theoretical...3 Fig. 2 Calculated polar optical scattering rate for the nonparabolic conduction band in GaN including the screening effect

  16. Proposed Rabi-Kondo correlated state in a laser-driven semiconductor quantum dot.

    PubMed

    Sbierski, B; Hanl, M; Weichselbaum, A; Türeci, H E; Goldstein, M; Glazman, L I; von Delft, J; Imamoğlu, A

    2013-10-11

    Spin exchange between a single-electron charged quantum dot and itinerant electrons leads to an emergence of Kondo correlations. When the quantum dot is driven resonantly by weak laser light, the resulting emission spectrum allows for a direct probe of these correlations. In the opposite limit of vanishing exchange interaction and strong laser drive, the quantum dot exhibits coherent oscillations between the single-spin and optically excited states. Here, we show that the interplay between strong exchange and nonperturbative laser coupling leads to the formation of a new nonequilibrium quantum-correlated state, characterized by the emergence of a laser-induced secondary spin screening cloud, and examine the implications for the emission spectrum.

  17. Spin-Induced Optical Phenomena in Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Takeyama, Shojiro

    The following sections are included: * INTRODUCTION * GENERAL FEATURES * Materials * Crystal Structures * Band Structure at ěc{k}≃ 0 * sp-d Exchange Interaction * Magnetic Properties and Parameters * Magnetization Steps due to Nearest-Neighbor Spin Pairs * The Physical Origin of the sp-d Exchange Constants * OPTICAL RESPONSE OF THE LOW-DIMENSIONAL DMSs * Anisotropy of the Zeeman Effect in Two-Dimensional DMSs * Magneto-Optical Method of Interface Characterization * MAGNETIC POLARONS * Bound Magnetic Polarons * Free Magnetic Polarons * OPTICAL OBSERVATION OF MAGNETIC POLARONS * A Selective Excitation Photoluminescence Study * Optical Survey of Free Magnetic Polarons * Two-Dimensional Exciton Free Magnetic Polarons * SUMMARY * REFERENCES

  18. Optical control of semiconductor closing and opening switches

    NASA Astrophysics Data System (ADS)

    Lee, Chi H.

    1990-12-01

    Recent progress in the research of high-power photoconductive semiconductor switches is reviewed. Material issues and switch design considerations are discussed. High-power ultra-wide-band microwave generation using these switches and a pulse-forming network is presented. The application of the photoconductive switch both as a closing and as an opening switch in an inductive energy storage system has been demonstrated. Electric pulse compression with a peak power gain of 30 has been observed. Future prospects in this area of research are discussed.

  19. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  20. Observation and simulation of an optically driven micromotor

    NASA Astrophysics Data System (ADS)

    Metzger, N. K.; Mazilu, M.; Kelemen, L.; Ormos, P.; Dholakia, K.

    2011-04-01

    In the realm of low Reynolds number flow there is a need to find methods to pump, move and mix minute amounts of analyte. Interestingly, micro-devices performing such actuation can be initiated by means of the light-matter interaction. Light induced forces and torques are exerted on such micro-objects, which are then driven by the optical gradient or scattering force. Here, different driving geometries can be realized to harness the light induced force. For example, the scattering force enables micro-gears to be operated in a tangential setup where the micromotor rotors are in line with an optical waveguide. The operational geometry we investigate has the advantage that it reduces the complexity of the driving of such a device in a microfluidic environment by delivering the actuating light by means of a waveguide or fiber optic. In this paper we explore the case of a micromotor being driven by a fiber optically delivered light beam. We experimentally investigate how the driving light interacts with and diffracts from the motor, utilizing two-photon imaging. The micromotor rotation rate dependence on the light field parameters is explored. Additionally, a theoretical model based on the paraxial approximation is used to simulate the torque and predict the rotation rate of such a device and compare it with experiment. The results presented show that our model can be used to optimize the micromotor performance and some example motor designs are evaluated.

  1. Controlled wave-packet manipulation with driven optical lattices

    SciTech Connect

    Arlinghaus, Stephan; Holthaus, Martin

    2011-12-15

    Motivated by recent experimental progress achieved with ultracold atoms in kilohertz-driven optical lattices, we provide a theoretical discussion of mechanisms governing the response of a particle in a cosine lattice potential to strong forcing pulses with smooth envelope. Such pulses effectuate adiabatic motion of a wave packet's momentum distribution on quasienergy surfaces created by spatiotemporal Bloch waves. Deviations from adiabaticity can then be deliberately exploited for exerting coherent control and for reaching target states which may not be accessible by other means. As one particular example, we consider an analog of the {pi} pulses known from optical resonance. We also suggest adapting further techniques previously developed for controlling atomic and molecular dynamics by laser pulses to the coherent control of matter waves in shaken optical lattices.

  2. Symmetry driven control of optical properties in WO3 films

    DOE PAGES

    Herklotz, A.; Rus, S. F.; KC, S.; ...

    2017-06-23

    Optical band gap control of semiconducting thin films is critical for the optimization of photoelectronic and photochemical applications. In this work, we demonstrate that the optical band gap of WO3 films can be continuously controlled through uniaxial strain induced by low-energy helium implantation. We show that the implantation of He into epitaxially grown and coherently strained WO3 films can be used to induce single axis out-of-plane lattice expansion of up to 2%. Ellipsometric spectroscopy reveals that this lattice expansion shifts the absorption spectrum to lower energies and effectively reduces the optical band gap by about 0.18 eV per percent expansionmore » of the out-of-plane unit cell length. Furthermore, density functional calculations show that this response is a direct result of changes in orbital degeneracy driven by changes in the octahedral rotations and tilts.« less

  3. Optical-helicity-driven magnetization dynamics in metallic ferromagnets

    NASA Astrophysics Data System (ADS)

    Choi, Gyung-Min; Schleife, André; Cahill, David G.

    2017-04-01

    Recent observations of switching of magnetic domains in ferromagnetic metals by circularly polarized light, so-called all-optical helicity dependent switching, has renewed interest in the physics that governs the interactions between the angular momentum of photons and the magnetic order parameter of materials. Here we use time-resolved-vectorial measurements of magnetization dynamics of thin layers of Fe, Ni and Co driven by picosecond duration pulses of circularly polarized light. We decompose the torques that drive the magnetization into field-like and spin-transfer components that we attribute to the inverse Faraday effect and optical spin-transfer torque, respectively. The inverse Faraday effect is approximately the same in Fe, Ni and Co, but the optical spin-transfer torque is strongly enhanced by adding a Pt capping layer. Our work provides quantitative data for testing theories of light-material interactions in metallic ferromagnets and multilayers.

  4. Quantum correlation control for two semiconductor microcavities connected by an optical fiber

    NASA Astrophysics Data System (ADS)

    Mohamed, A.-B. A.; Eleuch, H.

    2017-06-01

    We explore the quantum correlations for two coupled quantum wells. Each quantum well is inside a semiconductor microcavity. The two cavities are connected by an optical fiber. The study of quantum correlations, namely the geometric quantum discord, measurement-induced non-locality and negativity, reveals sudden death and sudden birth phenomena. These effects depend not only on the initial states, coupling strengths of the cavity-fiber and cavity-exciton constants, but also on the dissipation rates of the semiconductor microcavities. We show that the coupling constants control the quantum correlations.

  5. Integrated Semiconductor Optical Sensors for Chronic, Minimally-Invasive Imaging of Brain Function

    PubMed Central

    Lee, Thomas T.; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P.; Smith, Stephen J; Shenoy, Krishna V.; Harris, James S.

    2008-01-01

    Intrinsic Optical Signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull. PMID:17946016

  6. Time delay signature concealment of optical feedback induced chaos in an external cavity semiconductor laser.

    PubMed

    Wu, Jia-Gui; Xia, Guang-Qiong; Tang, Xi; Lin, Xiao-Dong; Deng, Tao; Fan, Li; Wu, Zheng-Mao

    2010-03-29

    The time delay (TD) signature concealment of optical feedback induced chaos in an external cavity semiconductor laser is experimentally demonstrated. Both the evolution curve and the distribution map of TD signature are obtained in the parameter space of external feedback strength and injection current. The optimum parameter scope of the TD signature concealment is also specified. Furthermore, the approximately periodic evolution relation between TD signature and external cavity length is observed and indicates that the intrinsic relaxation oscillation of semiconductor laser may play an important role during the process of TD signature suppression.

  7. New concept to break the intrinsic properties of organic semiconductors for optical sensing applications

    NASA Astrophysics Data System (ADS)

    Choy, Wallace C. H.

    2015-09-01

    As the intrinsic electrostatic limit, space charge limit (SCL) for photocurrent is a universal phenomenon which is fundamental important for organic semiconductors. We will demonstrate SCL breaking by a new plasmonic-electrical concept. As a proof-ofconcept, organic solar cells (OSCs) comprising metallic planar and grating electrodes are studied. Interestingly, although strong plasmonic resonances induce abnormally dense photocarriers around a grating anode, the grating incorporated inverted OSC is exempt from space charge accumulation (limit) and degradation of electrical properties. The plasmonic-electrical concept will open up a new way to manipulate both optical and electrical properties of semiconductor devices simultaneously.

  8. Many-body effects in low-order optical nonlinearities of semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Roumiantsev, Ilia

    This dissertation addresses both fundamental aspects of Coulomb correlations in semiconductor quantum wells and more practical aspects of theoretical analysis of semiconductor optoelectronic devices. After introducing the subject, we present and evaluate a state-of-the-art theory of the third order coherent optical response of a semiconductor quantum well based on the Dynamics Controlled Truncation (DCT) scheme. Already in the third order (the so-called chi (3)) regime, semiconductors exhibit a number of many-body Coulomb correlation effects. Their manifestation in various multi-pulse experimental configurations, customarily used in ultrafast semiconductor spectroscopy, has been an important component of this thesis. Coherent optical effects in a semiconductor 3-band system based on the heavy-hole, light-hole and conduction bands were investigated. The quantum beats in the time-integrated differential transmission signal were analyzed and compared with experimental data obtained at the University of Iowa. Fundamental differences from corresponding quantum beats in atomic 3-level systems were found. Also, the analysis of experimental data (obtained at the University of Arizona) of the coupled heavy-hole-light-hole optical Stark shift revealed evidence of intervalence band coherences, an analog of Raman coherences in atomic 3-levels systems. A scheme for realization of electromagnetically-induced transparency (EIT) based on the interference of excitonic and biexcitonic coherences was proposed. Corresponding experiments performed at the University of Oregon showed indeed a considerable coherent reduction of excitonic absorption. Furthermore, an extension of the chi(3) analysis revealed an energy renormalization of the biexciton, in good agreement with the corresponding experiment. A microscopic analysis of polarization dynamics in time-resolved four-wave mixing signals was performed, revealing interesting implications for the biexciton dephasing in addition to the

  9. Low-temperature optical processing of semiconductor devices using photon effects

    SciTech Connect

    Sopori, B.L.; Cudzinovic, M.; Symko, M.

    1995-08-01

    In an RTA process the primary purpose of the optical energy incident on the semiconductor sample is to increase its temperature rapidly. The activation of reactions involved in processes such as the formation of junctions, metal contacts, deposition of oxides or nitrides, takes place purely by the temperature effects. We describe the observation of a number of new photonic effects that take place within the bulk and at the interfaces of a semiconductor when a semiconductor device is illuminated with a spectrally broad-band light. Such effects include changes in the diffusion properties of impurities in the semiconductor, increased diffusivity of impurities across interfaces, and generation of electric fields that can alter physical and chemical properties of the interface. These phenomena lead to certain unique effects in an RTA process that do not occur during conventional furnace annealing under the same temperature conditions. Of particular interest are observations of low-temperature alloying of Si-Al interfaces, enhanced activation of phosphorus in Si during drive-in, low-temperature oxidation of Si, and gettering of impurities at low-temperatures under optical illumination. These optically induced effects, in general, diminish with an increase in the temperature, thus allowing thermally activated reaction rates to dominate at higher temperatures.

  10. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking.

    PubMed

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J; Grillot, Frédéric

    2016-06-15

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%.

  11. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    PubMed Central

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  12. Improved reduced models for single-pass and reflective semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    O Duill, S. P.; Barry, L. P.

    2015-01-01

    We present highly accurate and easy to implement, improved lumped semiconductor optical amplifier (SOA) models for both single-pass and reflective semiconductor optical amplifiers (RSOA). The key feature of the model is the inclusion of the internal losses and we show that a few SOA subdivisions are required to achieve a computational accuracy of <0.12 dB. For the case of RSOAs, we generalize a recently published model to account for the internal losses that are vital to replicate the observed RSOA behavior. The results of the improved reduced RSOA model show large overlap when compared to a full bidirectional travelling wave model for over a 40 dB dynamic range of input powers and a 20 dB dynamic range of reflectivity values. The models would be useful for the rapid system simulation of signals in communication systems, i.e. passive optical networks that employ RSOAs, signal processing using SOAs.

  13. Simulation of optical excitation spectra of semiconductor nanowires within effective bond orbital model

    NASA Astrophysics Data System (ADS)

    Chang, Y. C.; Mahmoud, Waleed E.

    2015-11-01

    Systematic studies of optical excitation spectra of semiconductor nanowires (including group IV, III-V, and II-VI materials) obtained by using an eight-band effective bond-orbital model (EBOM) are presented. A new set of EBOM parameters are determined which produce good band structures of zincblende semiconductors for the entire Brillouin zone, suitable for modeling the excitation spectra from infrared to ultraviolet. The band structures and optical excitation spectra, including both the interband and intraband transitions (for doped cases) are calculated. The calculations were done with the use of a symmetrized basis functions which transform according to the irreducible representations of the underlying point group. This can improve the computation efficiency by about two orders of magnitude. Thus, the electronic and optical properties of a large class of materials can be simulated.

  14. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    SciTech Connect

    Kasherininov, P. G. Tomasov, A. A.

    2008-11-15

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10{sup 6} cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10{sup -2}V/cm{sup 2}, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  15. Voltage controlled optics of a monolayer semiconductor quantum emitter

    NASA Astrophysics Data System (ADS)

    Chakraborty, Chitraleema; Goodfellow, Kenneth; Kinnischtzke, Laura; Vamivakas, Nick; University of Rochester Team

    2015-03-01

    Two-dimensional atomically thin materials are being actively investigated for next generation optoelectronic devices. Particularly exciting are transition metal dichalcogenides (TMDC) since these materials exhibit a band gap, and support valley specific exciton mediated optical transitions. In this work we report the observation of single photon emission in the TMDC tungsten diselenide. We present magneto-optical spectroscopy results and demonstrate voltage controlled photoluminescence of these localized quantum emitters.

  16. Glass doped with semiconductor nanoparticles for optical devices

    NASA Astrophysics Data System (ADS)

    Rodriguez, E.; Ponce, L.; Arronte, M.; de Posada, E.; Kellerman, G.; César, C. L.; Barbosa, L. C.

    2009-09-01

    We report the fabrication of glass multilayer doped with semiconductor nanoparticles. The glass matrix was fabricated by Plasma Enhanced Chemical Deposition (PECVD using tetramethoxysilane (TMOS) as precursor. The RF power was supplied by a RF-150 TOKYO HI-Power operating at 13.56 MHz and coupled to the RF electrodes through a matching box. The nanoparticles were grown by pulsed laser deposition (PLD) of a PbTe target using the second harmonic of a Q-Switched Quantel Nd:YAG laser in high purity inert gas atmosphere. The influence of gas and background pressure and in the nanoparticle size and size distribution is studied. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy(HRTEM), grazing-incidence smallangleX-ray scattering (GISAXS).

  17. The dynamics of radiation-driven, optically thick winds

    NASA Astrophysics Data System (ADS)

    Shen, Rong-Feng; Nakar, Ehud; Piran, Tsvi

    2016-06-01

    Recent observation of some luminous transient sources with low colour temperatures suggests that the emission is dominated by optically thick winds driven by super-Eddington accretion. We present a general analytical theory of the dynamics of radiation pressure-driven, optically thick winds. Unlike the classical adiabatic stellar wind solution whose dynamics are solely determined by the sonic radius, here the loss of the radiation pressure due to photon diffusion also plays an important role. We identify two high mass-loss rate regimes (dot{M} > L_Edd/c^2). In the large total luminosity regime, the solution resembles an adiabatic wind solution. Both the radiative luminosity, L, and the kinetic luminosity, Lk, are super-Eddington with L < Lk and L ∝ L_k^{1/3}. In the lower total luminosity regime, most of the energy is carried out by the radiation with Lk < L ≈ LEdd. In a third, low mass-loss regime (dot{M} < L_Edd/c^2), the wind becomes optically thin early on and, unless gas pressure is important at this stage, the solution is very different from the adiabatic one. The results are independent from the energy generation mechanism at the foot of the wind; therefore, they are applicable to a wide range of mass ejection systems, from black hole accretion, to planetary nebulae, and to classical novae.

  18. Optical knobs from slow- to fast-light with gain in low-dimensional semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Han, Dingan; Zeng, Yaguang; Bai, Yanfeng

    2011-09-01

    The light pulse propagation through semiconductor quantum-well heterostructures under realistic experimental conditions is studied analytically with the Schrödinger equations. It is shown that slow light and superluminal propagation with gain can be observed by varying the relative phase and the strength of the applied fields. Such investigation may open up the possibility to control the light propagation and may lead to potential applications such as high-fidelity optical delay lines, optical buffers and optical communication in quantum wells solid materials.

  19. Polarization-dependent optical 2D Fourier transform spectroscopy of semiconductors

    PubMed Central

    Zhang, Tianhao; Kuznetsova, Irina; Meier, Torsten; Li, Xiaoqin; Mirin, Richard P.; Thomas, Peter; Cundiff, Steven T.

    2007-01-01

    Optical 2D Fourier transform spectroscopy (2DFTS) provides insight into the many-body interactions in direct gap semiconductors by separating the contributions to the coherent nonlinear optical response. We demonstrate these features of optical 2DFTS by studying the heavy-hole and light-hole excitonic resonances in a gallium arsenide quantum well at low temperature. Varying the polarization of the incident beams exploits selection rules to achieve further separation. Calculations using a full many-body theory agree well with experimental results and unambiguously demonstrate the dominance of many-body physics. PMID:17630286

  20. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, M. C.; Muggli, Patric; Yakimenko, Vitaly; Babzien, Marcus; Kusche, Karl; Fedurin, Mikhail

    2010-11-01

    Beam-driven plasma wakefield accelerators (PWFA), such as the ``plasma afterburner,'' are a promising approach for significantly increasing the particle energies of conventional accelerators. The study and optimization of PWFA would benefit from an experimental correlation between the parameters of the drive bunch, the accelerated bunch and the corresponding, accelerating plasma wave structure. However, the plasma wave structure has not yet been observed directly in PWFA. We will report our current work on noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) visualization of beam-driven plasma waves. Both techniques employ two laser pulses (probe and reference) co-propagating with the particle drive-beam and its plasma wake. The reference pulse precedes the drive bunch, while the probe overlaps the plasma wave and maps its longitudinal and transverse structure. The experiment is being developed at the BNL/ATF Linac to visualize wakes generated by two and multi-bunch drive beams.

  1. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    NASA Astrophysics Data System (ADS)

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  2. Optical properties of two-dimensional zigzag and armchair graphyne nanoribbon semiconductor.

    PubMed

    Asadpour, Mohamad; Jafari, Mahmoud; Asadpour, Milad; Jafari, Maryam

    2015-03-15

    Optical properties of zigzag and armchair graphyne nanoribbon (GNR) sheet were investigated. Effect of increasing the width of nanoribbon on optical properties and optical band gap in particular was also studied. Calculations were based on density functional theory (DFT) and the results showed that these structures were semiconductors with the optical band gap of about 1-3.5 eV; this value was higher than for the armchair than zigzag structures. With increasing the width of the ribbons, optical band gap decreased in both structures and maximum electron energy loss spectroscopy (EELS) and dielectric constant increased for the zigzag and armchair structures. Moreover, for the armchair structure, maximum optical reflectivity versus GNR width was a linear function, while it showed a teeth behavior for the zigzag structure.

  3. Optically Induced Space-charge and Conductivity Gratings in Wide-bandgap Semiconductors

    NASA Astrophysics Data System (ADS)

    Bryushinin, M. A.; Karavaev, P. M.; Sokolov, I. A.

    We report optical excitation of space-charge and conductivity gratings in wide-bandgap semiconductors. The approach is based on the illumination of semiconductor material with an oscillating interference pattern formed of two light waves, one of which is phase modulated with frequency ω. The non-steady-state photocurrent flowing through the short-circuited semiconductor is the measurable quantity in this technique. The alternating current results from the periodic relative shifts of the photoconductivity and space charge electric field gratings which arise in the volume of the crystal under illumination. The experiments are carried out in β-Ga2O3 crystal and the main parameters of the photoinduced carriers are determined.

  4. Electrically-driven optical antennas enabled by mesoscopic contacts

    NASA Astrophysics Data System (ADS)

    Uskov, Alexander V.; Khurgin, Jacob B.; Bouhelier, Alexandre; Buret, Mikael; Protsenko, Igor E.; Smetanin, Igor V.

    2017-02-01

    Electrically driven optical antennas are attracting much attention, in particular, due to necessity to develop integrated electrical source of surface plasmons for future plasmonic nanocircuitries. By default, this term denotes a metal nanostructure, in which electromagnetic oscillations at optical frequencies are excited by electrons, tunneling between metallic parts of the structure when a bias voltage is applied between them. Instead of relying on an inefficient inelastic light emission in a tunnel gap, we are suggesting to use ballistic nanoconstrictions as the feed element of an optical antennas in order to excite electromagnetic plasmonic modes. Similarly to tunneling structures, the voltage applied at the constriction falls over the contact of nanoscale length. Electron passing through the contact ballistically can gain the energy provided by the bias 1eV and exchange it into an mode of the optical antenna. We discussed the underlying mechanisms responsible for the optical emission, and show that with nanoscale contact, one can reach quantum efficiency orders of magnitude larger than with standard tunneling structures.

  5. High efficiency coherent beam combining of semiconductor optical amplifiers.

    PubMed

    Creedon, Kevin J; Redmond, Shawn M; Smith, Gary M; Missaggia, Leo J; Connors, Michael K; Kansky, Jan E; Fan, Tso Yee; Turner, George W; Sanchez-Rubio, Antonio

    2012-12-01

    We demonstrate 40 W coherently combined output power in a single diffraction-limited beam from a one-dimensional 47-element array of angled-facet slab-coupled optical waveguide amplifiers at 1064 nm. The output from each emitter was collimated and overlapped onto a diffractive optical element combiner using a common transform lens. Phase locking was achieved via active feedback on each amplifier's drive current to maximize the power in the combined beam. The combining efficiency at all current levels was nearly constant at 87%.

  6. Optical fiber tips functionalized with semiconductor photonic crystal cavities

    NASA Astrophysics Data System (ADS)

    Shambat, Gary; Provine, J.; Rivoire, Kelley; Sarmiento, Tomas; Harris, James; Vučković, Jelena

    2011-11-01

    We demonstrate a simple and rapid epoxy-based method for transferring photonic crystal (PC) cavities to the facets of optical fibers. Passive Si cavities were measured via fiber taper coupling as well as direct transmission from the fiber facet. Active quantum dot containing GaAs cavities showed photoluminescence that was collected both in free space and back through the original fiber. Cavities maintain a high quality factor (2000-4000) in both material systems. This design architecture provides a practical mechanically stable platform for the integration of photonic crystal cavities with macroscale optics and opens the door for innovative research on fiber-coupled cavity devices.

  7. Beam driven upper-hybrid-wave instability in quantized semiconductor plasmas

    SciTech Connect

    Jamil, M.; Rasheed, A.; Rozina, Ch.; Moslem, W. M.; Salimullah, M.

    2014-02-15

    The excitation of Upper-Hybrid waves (UHWs) induced by electron beam in semiconductor plasma is examined using quantum hydrodynamic model. Various quantum effects are taken into account including recoil effect, Fermi degenerate pressure, and exchange-correlation potential. The bandwidth of the UHWs spectrum shows that the system supports purely growing unstable mode. The latter has been studied for diversified parameters of nano-sized GaAs semiconductor.

  8. Efficiently tunable photon emission from an optically driven artificial molecule

    NASA Astrophysics Data System (ADS)

    Cotrino-Lemus, Jonathan; Ramírez, Hanz Y.

    2017-06-01

    In this work, the emission properties of double quantum dots driven by an intense monochromatic electromagnetic field, while undergoing resonant tunnelling, are investigated. We find the optically active energy transitions and their corresponding emission intensity, and compute resonance fluorescence spectra for different detunings between the direct and indirect exciton energies. The simulated emission exhibit either three, five, or seven peaks, tunable on demand. On the basis of the obtained results, our proposal offers efficient control of the resonance fluorescence of an artificial molecule, suitable for optoelectronic applications.

  9. Emergent Cometlike Swarming of Optically Driven Thermally Active Colloids

    NASA Astrophysics Data System (ADS)

    Cohen, Jack A.; Golestanian, Ramin

    2014-02-01

    We propose a simple system of optically driven colloids that convert light into heat and move in response to self-generated and collectively generated thermal gradients. We show that the system exhibits self-organization into a moving cometlike swarm and characterize the structure and response of the swarm to a light-intensity-dependent external tuning parameter. We observe many interesting features in this nonequilibrium system including circulation and evaporation, intensity-dependent shape, density and temperature fluctuations, and ejection of hot colloids from the swarm tip.

  10. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    NASA Astrophysics Data System (ADS)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  11. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    SciTech Connect

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-08-15

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception–and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In{sub 2}O{sub 3} (ITO)—converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein–Moss shift that are consistent with previous studies on In{sub 2}O{sub 3} single crystals and thin films. - Highlights: • The Tauc method of band gap measurement is re-evaluated for crystalline materials. • Graphical method proposed for extracting optical band gaps from absorption spectra. • The proposed method incorporates an energy broadening term for energy transitions. • Values for ITO were self-consistent between two different measurement methods.

  12. Synchronization of bandwidth-enhanced chaos in semiconductor lasers with optical feedback and injection.

    PubMed

    Someya, Hiroyuki; Oowada, Isao; Okumura, Haruka; Kida, Takahiko; Uchida, Atsushi

    2009-10-26

    We experimentally investigate the generation and synchronization of bandwidth-enhanced chaos in a semiconductor laser (drive laser) that is subject to optical injection from another chaotic semiconductor laser (injection laser) with optical feedback. Effective bandwidth enhancement is achieved over 12 GHz, under the condition in which the optical wavelength of the drive laser is positively detuned with respect to that of the injection laser, outside the injection locking range. The bandwidth-enhanced chaotic signal of the drive laser is injected into a third semiconductor laser (response laser) for synchronization. Synchronization of chaos with a bandwidth greater than 12 GHz is observed between the drive and response lasers, under the condition in which the optical wavelength of the response laser is negatively detuned with respect to that of the drive laser, satisfying the injection locking condition. High-quality chaos synchronization is observed within the injection locking range between the drive and response lasers and under the condition of a low relaxation oscillation frequency of the response laser.

  13. Fibre-optic thermometer using semiconductor-etalon sensor

    NASA Technical Reports Server (NTRS)

    Beheim, G.

    1986-01-01

    A fiber-optic thermometer is described which uses a thick-film SiC sensing etalon. The etalon's temperature-dependent phase shift is determined by analyzing its spectral reflectance, using an LED and a tunable Michelson interferometer. Temperatures from 20 to 1000 C are measured with better than 0.5 deg C resolution.

  14. Novel all-optical switches based on traveling-wave semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaoxing

    1997-08-01

    In this work, novel all-optical switches, which can provide both high-speed and broad-bandwidth switching simultaneously for future telecommunication networks, have been proposed and demonstrated in traveling-wave semiconductor optical amplifiers (TW-SOA). The design, fabrication and characterization of anti- reflection coating for TW-SOA were presented. Guided mode approach was used to optimize the coating conditions. High quality TW-SOA were fabricated with 21 dB small- signal gain, 0.2 dB gain ripple and 5× 10-5 residual reflectivity. The study showed careful selection of the laser wavelength was necessary in order to match the amplifier's operating wavelength. A new class of an all-optical packet switch-the wavelength recognizing switch (WRS)-was proposed. The device uses a control signal to sense the wavelength of the input data packet and taps the packet to the appropriate output port. The underlying mechanism is nearly-degenerate four-wave mixing (FWM). The implementation of the WRS in a broad-area TW-SOA provided +8.2 dB switching efficiency, -28.8 dB crosstalk and 32.9 dB signal-to-noise ratio. The switching bandwidth was 42 nm, while the recognition bandwidth was 0.03 A. Completely filter-free FWM wavelength conversion was also proposed and demonstrated for the first time. The noncollinear configuration provided 29 dB suppression of the straight-through converter beam from the converted signal. Further suppression of the strong pump beam from the converted signal was realized by using an orthogonal polarization technique, with isolation ratio of 19.2 dB achieved. A high conversion efficiency of 4.9 dB, together with a wide efficiency bandwidth of 40 nm and a large signal-to-noise ratio of 28 dB was obtained. Important material parameters were investigated for the optimization of devices' performance. Ambipolar diffusion coefficient of 8.0 cm2/s and carrier lifetime of 1.33 ns were directly measured. The diffusion coefficient decreased as the current

  15. Synthesis and optical properties of organic semiconductor: zirconia nanocomposites

    NASA Astrophysics Data System (ADS)

    Sagmeister, M.; Brossmann, U.; List, E. J. W.; Ochs, R.; Szabó, D. V.; Saf, R.; Grogger, W.; Tchernychova, E.; Würschum, R.

    2010-09-01

    Oxide nanoparticles were used as carrier for organic semiconductor materials. Stable suspensions of ZrO2 nanoparticles coated with anthracene, pentacene, or para-hexaphenyl were obtained by microwave plasma synthesis of ZrO2 cores, subsequent in situ coating with organic compounds, and in situ dispersion in ethylene glycol. Powders of coated oxide nanoparticles were synthesized for comparison. The successful coating and a small uniform size distribution of the ZrO2 cores were confirmed by comprehensive characterization including photoluminescence, absorption spectroscopy, electron microscopy, electron energy loss spectroscopy, mass spectrometry, and X-ray diffraction. Powder compacts of anthracene-coated ZrO2 particles showed good air stability and a significant blue shift accompanied by an attenuation of the emission lines at higher vibronic orders in comparison to samples of pure anthracene as received. For para-hexaphenyl-coated nanoparticles, the same photoluminescence characteristics are observed as for pure para-hexaphenyl. In the case of pentacene-coated nanoparticles indication for degradation is found.

  16. Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-11-01

    We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

  17. Gigahertz to terahertz tunable all-optical single-side-band microwave generation via semiconductor optical amplifier gain engineering.

    PubMed

    Li, Fangxin; Helmy, Amr S

    2013-11-15

    We propose and demonstrate a technique to generate low-noise broadly tunable single-side-band microwaves using cascaded semiconductor optical amplifiers (SOAs) using no RF bias. The proposed technique uses no RF components and is based on polarization-state controlled gain-induced four-wave mixing in SOAs. Microwave generation from 40 to 875 GHz with a line-width ~22 KHz is experimentally demonstrated.

  18. Semiconductor hollow optical waveguides formed by omni-directional reflectors

    NASA Astrophysics Data System (ADS)

    Lo, Shih-Shou; Wang, Mou-Sian; Chen, Chii-Chang

    2004-12-01

    In this study, a hollow optical waveguide with omni-directional reflectors in silicon-based materials was design, fabricated and characterized. By using dry etching technique, plasma-enhanced chemical vapor deposition for Si/SiO2 thin films and covering another wafer with omni-directional reflector together, the waveguides can be formed with an air core of 1.2μm x 1.3μm. A uniform propagation loss of the waveguide to be around 1.7dB/cm for C+L band was found for the TE and TM modes. Polarization-independent hollow optical waveguides were obtained with the hollow waveguide structure.

  19. Fast Optical Control of Spin in Semiconductor Interfacial Structures

    NASA Astrophysics Data System (ADS)

    Nádvorník, L.; Surýnek, M.; Olejník, K.; Novák, V.; Wunderlich, J.; Trojánek, F.; Jungwirth, T.; Němec, P.

    2017-09-01

    We report on a picosecond-fast optical removal of spin polarization from a self-confined photocarrier system at an undoped GaAs /(Al ,Ga )As interface possessing superior long-range and high-speed spin-transport properties. We employ a modified resonant-spin-amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photoinjected into the system.

  20. Optical Spectroscopy of Hybrid Semiconductor Quantum Dots and Metal Nanoparticles

    DTIC Science & Technology

    2014-11-07

    FORM TO THE ABOVE ADDRESS. Hampton University 100 E. Queen Street Hampton, VA 23668 -0108 ABSTRACT Final Report: Optical Spectroscopy of Hybrid...when excitons and plasmons coherently interact via the Coulomb force . The changes in PL enhancement and quenching are closely related to the coupling...deposition images on the quartz plate were analyzed with an atomic force microscope (AFM, Agilent, 5500AFM). The image indicated that the Au nanoparticles

  1. Optical Detection Using Four-Layer Semiconductor Structures

    DTIC Science & Technology

    2005-06-01

    existing theory of static forward-biased operation to simulation results obtained using ATLAS by Silvaco , Inc. The results include identification of...and simulated IV curves are presented. 15. NUMBER OF PAGES 92 14. SUBJECT TERMS Thyristor, optical detector, pulse-mode, Silvaco , ATLAS...thyristor is in- vestigated by comparing the existing theory of static forward-biased operation to simula- tion results obtained using ATLAS by Silvaco

  2. Multiple optical probing of high frequency semiconductor devices

    NASA Astrophysics Data System (ADS)

    Fetterman, Harold

    1989-11-01

    The purchase was made of a complete Nd:YAG pumped picosecond dye laser and related optical components. Matching support was provided for an autocorrelator, power meters, lock-in detectors and Optical Table to form a complete measurement system. The idea was to fabricate a picosecond system which would measure devices and systems out to at least 200 GHz. It would be used to validate Network analyzer measurements in the region of overlap and to develop a degree of confidence in the entire technique of S parameter measurement using picosecond pulses. The highest frequency GaAs and GaAs alloy devices were investigated. New types of devices, MMIC amplifiers and finally the operational constraints of optical interconnections were studied. The system proved to be so useful that all of these tests were preformed and were extended to the generation of millimeter radiation and the demonstration of spectroscopic use. Current measurements are on ballistic field effect devices and resonant tunneling structures which were fabricated by local industries and universities directly as a result of this unique measurement capability.

  3. Coherent optical spectroscopy in a biological semiconductor quantum dot-DNA hybrid system

    PubMed Central

    2012-01-01

    We theoretically investigate coherent optical spectroscopy of a biological semiconductor quantum dot (QD) coupled to DNA molecules. Coupling with DNAs, the linear optical responses of the peptide QDs will be enhanced significantly in the simultaneous presence of two optical fields. Based on this technique, we propose a scheme to measure the vibrational frequency of DNA and the coupling strength between peptide QD and DNA in all-optical domain. Distinct with metallic quantum dot, biological QD is non-toxic and pollution-free to environment, which will contribute to clinical medicine experiments. This article leads people to know more about the optical behaviors of DNAs-quantum dot system, with the currently popular pump-probe technique. PMID:22340277

  4. Radio-over-fiber AM-to-FM upconversion using an optically injected semiconductor laser.

    PubMed

    Chan, Sze-Chun; Hwang, Sheng-Kwang; Liu, Jia-Ming

    2006-08-01

    A radio-over-fiber system uses light to carry a microwave subcarrier on optical fibers. The microwave is usually frequency modulated for wireless broadcasting. A conventional optical communication system usually operates at the baseband with amplitude modulation. The interface of the two systems thus needs an upconversion from the baseband to the microwave band with AM-to-FM transformation. An all-optical solution employing an optically injected semiconductor laser is investigated. The laser is operated in a dynamic state, where its intensity oscillates at a microwave frequency that varies with the injection strength. When the injection carries AM data, the microwave is frequency modulated accordingly. We demonstrate optical conversion from an OC-12 622-Mbps AM baseband signal to the corresponding FM microwave signal. The microwave is centered at 15.90 GHz. A bit-error rate of less than 10(-9) is measured.

  5. Optical bistability and hysteresis of a hybrid metal-semiconductor nanodimer

    NASA Astrophysics Data System (ADS)

    Malyshev, A. V.; Malyshev, V. A.

    2011-07-01

    Optical response of an artificial composite nanodimer comprising a semiconductor quantum dot and a metal nanosphere is analyzed theoretically. We show that internal degrees of freedom of the system can manifest bistability and optical hysteresis as functions of the incident field intensity. We argue that these effects can be observed for real-world systems, such as a CdSe quantum dot and an Au nanoparticle hybrid. These properties can be revealed by measuring the optical hysteresis of Rayleigh scattering. We also show that the total dipole moment of the system can be switched abruptly between its two stable states by small changes in the excitation intensity. The latter promises various applications in the field of all-optical processing at the nanoscale, the most basic of them being the volatile optical memory.

  6. Coherent optical spectroscopy in a biological semiconductor quantum dot-DNA hybrid system

    NASA Astrophysics Data System (ADS)

    Li, Jin-Jin; Zhu, Ka-Di

    2012-02-01

    We theoretically investigate coherent optical spectroscopy of a biological semiconductor quantum dot (QD) coupled to DNA molecules. Coupling with DNAs, the linear optical responses of the peptide QDs will be enhanced significantly in the simultaneous presence of two optical fields. Based on this technique, we propose a scheme to measure the vibrational frequency of DNA and the coupling strength between peptide QD and DNA in all-optical domain. Distinct with metallic quantum dot, biological QD is non-toxic and pollution-free to environment, which will contribute to clinical medicine experiments. This article leads people to know more about the optical behaviors of DNAs-quantum dot system, with the currently popular pump-probe technique.

  7. Coherent optical spectroscopy in a biological semiconductor quantum dot-DNA hybrid system.

    PubMed

    Li, Jin-Jin; Zhu, Ka-Di

    2012-02-16

    We theoretically investigate coherent optical spectroscopy of a biological semiconductor quantum dot (QD) coupled to DNA molecules. Coupling with DNAs, the linear optical responses of the peptide QDs will be enhanced significantly in the simultaneous presence of two optical fields. Based on this technique, we propose a scheme to measure the vibrational frequency of DNA and the coupling strength between peptide QD and DNA in all-optical domain. Distinct with metallic quantum dot, biological QD is non-toxic and pollution-free to environment, which will contribute to clinical medicine experiments. This article leads people to know more about the optical behaviors of DNAs-quantum dot system, with the currently popular pump-probe technique.

  8. Optical feedback effects on the performance of Pb/1-x/Sn/x/Se semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Harward, C. N.; Hoell, J. M.

    1979-01-01

    The effects of optical feedback on the performance of Pb(1-x)Sn(x)Se semiconductor lasers are reported. Experimental results are presented to demonstrate that uncontrolled optical feedback can occur from optics external to the laser cavity and that these external optical elements can result in the formation of a composite cavity. This composite cavity can sustain a number of narrow closely spaced emission modes with the spectral characteristics of these modes dependent upon the parameters of the cavity. With weak feedback, the spectral width of the amplitude envelope of the new lasing modes resembles that of the original laser mode with no optical feedback. With strongly coupled feedback the envelope of the external cavity modes substantially broadens the apparent linewidth of the laser. It is shown that these effects can be eliminated, and, moreover, they offer the potential for obtaining spectrally narrow single-mode emission from Pb-salt lasers through the use of carefully designed external cavities.

  9. Single-sideband photonic microwave generation with an optically injected quantum-dot semiconductor laser.

    PubMed

    Chen, Chih-Ying; Cheng, Chih-Hao; Lin, Fan-Yi

    2016-12-26

    We studied single-sideband (SSB) photonic microwave generation with a high sideband rejection ratio (SRR) based on the period-one dynamical states of an optically injected quantum-dot (QD) semiconductor laser and demonstrated that the SSB signals have SRRs of approximately 15 dB higher than those generated with a conventional quantum-well semiconductor laser under conditions of optimal microwave power. The enhancement of SRR in the QD laser, which is important in mitigating the power penalty effect in applications such as radio-over-fiber optical communications, could be primarily attributed to a lower carrier decay rate in the dots, smaller linewidth enhancement factor, and reduced photon decay rate.

  10. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    SciTech Connect

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-04

    Bunch driven plasma wakefield accelerators (PWFA), such as the 'plasma afterburner', are a promising emerging method for significantly increasing the energy output of conventional particle accelerators. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two and multi-bunch drive beams.

  11. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-01

    Bunch driven plasma wakefield accelerators (PWFA), such as the "plasma afterburner," are a promising emerging method for significantly increasing the energy output of conventional particle accelerators [1]. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) [2] and Holographic (FDH) [3] diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two [4] and multi-bunch [5] drive beams.

  12. Optically driven micropump with a twin spiral microrotor.

    PubMed

    Maruo, Shoji; Takaura, Akira; Saito, Yohei

    2009-10-12

    An optically driven micropump that employs viscous drag exerted on a spinning microrotor with left- and right-handed spiral blades on its rotational axis has been developed using two-photon microfabrication. It was demonstrated that the twin spiral microrotor provides a higher rotation speed than a single spiral microrotor. The rotation speed reached 560 rpm at a laser power of 500 mW. The twin spiral microrotor was also applied to a viscous micropump with a U-shaped microchannel. To pump fluid, the twin spiral microrotor located at the corner of the U-shaped microchannel was rotated by focusing a laser beam. The flow field inside the U-shaped microchannel was analyzed using the finite element method (FEM) based on the Navier-Stokes equation to optimize the shape of the microchannel. It was confirmed that the rotation of the twin spiral microrotor generated a unidirectional laminar flow. Finally, a tandem micropump using two twin spiral microrotors was driven by a dual optical trapping system using a spatial light modulation technique.

  13. Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

    NASA Technical Reports Server (NTRS)

    Suematsu, Y.; Iga, K.

    1980-01-01

    Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

  14. Tunable fractional-order photonic differentiator using a distributed feedback semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Sun, Shuqian; Deng, Ye; Zhu, Ninghua; Li, Ming

    2016-03-01

    We propose a tunable fractional-order photonic differentiator based on a distributed feedback semiconductor optical amplifier (SOA) working in reflection mode. The phase shift at the resonant wavelength can be adjusted by controlling the current injected into the DFB-SOA, which can implement the fractional-order differentiation. A 60 ps Gaussian pulse is temporally differentiated with a tunable order range from 0.7 to 1.3.

  15. Development of a Novel Optical Spectroscopy Tool for Studies of Coulomb Correlations in Semiconductors

    DTIC Science & Technology

    2012-06-18

    National Academy MemberPERCENT_SUPPORTEDNAME Xiaoqin Li 0.08 0.08FTE Equivalent: 1Total Number: Names of Under Graduate students supported...optical two dimensional (2D) Fourier transform spectroscopy, is already under way1, 2. This spectroscopy technique holds great promise to visualize...statistics in semiconductor heterostructures such as QWs and quantum wires as well as other systems such as molecular aggregates and photosynthesis

  16. Methods and devices for optimizing the operation of a semiconductor optical modulator

    DOEpatents

    Zortman, William A.

    2015-07-14

    A semiconductor-based optical modulator includes a control loop to control and optimize the modulator's operation for relatively high data rates (above 1 GHz) and/or relatively high voltage levels. Both the amplitude of the modulator's driving voltage and the bias of the driving voltage may be adjusted using the control loop. Such adjustments help to optimize the operation of the modulator by reducing the number of errors present in a modulated data stream.

  17. Generation of high-power ultrashort optical pulses by semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Dudelev, V. V.; Zazulin, S. V.; Kolykhalova, E. D.; Losev, S. N.; Deryagin, A. G.; Kuchinskii, V. I.; Efanov, M. V.; Sokolovskii, G. S.

    2016-12-01

    Fiber-coupled semiconductor lasers have been studied when pumped by high-power short electrical pulses of 5 ns width and leading front duration below 1 ns. In this pumping regime, it is possible to ensure significant sharpening of output pulses, the duration of which decreases below 80 ps for a single-mode laser and below 120 ps for a broad aperture multimode laser at an output peak optical power as high as 1.5 and 27 W, respectively.

  18. Slow and fast dynamics of gain and phase in a quantum dot semiconductor optical amplifier.

    PubMed

    Vallaitis, T; Koos, C; Bonk, R; Freude, W; Laemmlin, M; Meuer, C; Bimberg, D; Leuthold, J

    2008-01-07

    Gain and phase dynamics in InAs/GaAs quantum dot semiconductor optical amplifiers are investigated. It is shown that gain recovery is dominated by fast processes, whereas phase recovery is dominated by slow processes. Relative strengths and time constants of the underlying processes are measured. We find that operation at high bias currents optimizes the performance for nonlinear cross-gain signal processing if a low chirp is required.

  19. Proposed coupling of an electron spin in a semiconductor quantum dot to a nanosize optical cavity.

    PubMed

    Majumdar, Arka; Kaer, Per; Bajcsy, Michal; Kim, Erik D; Lagoudakis, Konstantinos G; Rundquist, Armand; Vučković, Jelena

    2013-07-12

    We propose a scheme to efficiently couple a single quantum dot electron spin to an optical nano-cavity, which enables us to simultaneously benefit from a cavity as an efficient photonic interface, as well as to perform high fidelity (nearly 100%) spin initialization and manipulation achievable in bulk semiconductors. Moreover, the presence of the cavity speeds up the spin initialization process beyond the GHz range.

  20. Simple laser velocimeter that uses photoconductive semiconductors to measure optical frequency differences.

    PubMed

    Wang, C C; Davidson, F; Trivedi, S

    1995-10-01

    The dc photocurrents generated by steady-state moving space-charge fields inside photoconductive semiconductors containing deep level donors and traps can be used to determine the relative frequency differences between the two interfering optical fields that establish the space-charge fields. A simple laser velocimeter that uses a semi-insulating GaAs:Cr sample to detect the Doppler frequency shift between two laser beams is demonstrated.

  1. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Yang, Liu; Nan, Ye; Baojun, Wang; Daibing, Zhou; Xin, An; Jing, Bian; Jiaoqing, Pan; Lingjuan, Zhao; Wei, Wang

    2010-07-01

    High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier. Tilted amplifier and anti-reflection facet coating are used to suppress reflection. We have demonstrated sampled grating DBR laser with a tuning range over 38 nm, good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.

  2. Saturated semiconductor optical amplifier phase modulation for long range laser radar applications.

    PubMed

    Carns, Jennifer L; Duncan, Bradley D; Dierking, Matthew P

    2012-08-20

    We investigate the use of a semiconductor optical amplifier operated in the saturation regime as a phase modulator for long range laser radar applications. The nature of the phase and amplitude modulation resulting from a high peak power Gaussian pulse, and the impact this has on the ideal pulse response of a laser radar system, is explored. We also present results of a proof-of-concept laboratory demonstration using phase-modulated pulses to interrogate a stationary target.

  3. Ab initio study of optical absorption spectra of semiconductors and conjugated polymers

    SciTech Connect

    Tiago, M.L.; Chang, Eric K.; Rohlfing, Michael; Louie, Steven G.

    2000-04-30

    The effects of electron-hole interaction on the optical properties of a variety of materials have been calculated using an ab initio method based on solving the Bethe-Salpeter equation. Results on selected semiconductors, insulators, and semiconducting polymers are presented. In the cases of alpha-quartz (SiO2) and poly-phenylene-vinylene, resonant excitonic states qualitatively alter the absorption spectra.

  4. Electrical and Optical Response Properties of MEH-PPV Semiconductor Polymer Schottky Diodes

    DTIC Science & Technology

    2011-07-01

    A JONES ATTN RDRL SED E M LITZ ATTN RDRL SED P A LELIS ATTN RDRL SEE E K ALIBERTI ATTN RDRL SEE E N GUPTA ATTN RDRL SEE...Wijewarnasuriya ARL -TR-5591 July 2011 Approved for public release; distribution unlimited...Laboratory Adelphi, MD 20783-1197 ARL -TR-5591 July 2011 Electrical and Optical Response Properties of MEH-PPV Semiconductor Polymer Schottky

  5. Soliton all-optical logic AND gate with semiconductor optical amplifier-assisted Mach-Zehnder interferometer

    NASA Astrophysics Data System (ADS)

    Kotb, Amer; Zoiros, Kyriakos E.

    2016-08-01

    The concept of soliton provides a line in research in telecommunications systems. In the present study, a soliton all-optical logic AND gate with semiconductor optical amplifier (SOA)-assisted Mach-Zehnder interferometer has been numerically simulated and investigated. The dependence of the output quality factor (Q-factor) on the soliton characteristics and SOA parameters has been examined and assessed. The obtained results demonstrate that the soliton AND gate is capable of operating at a data rate of 80 Gb/s with logical correctness and high-output Q-factor.

  6. Recent Advances in Optically Controlled Bulk Semiconductor Switches

    DTIC Science & Technology

    1985-06-01

    REO!NT AIJifl,NCES IN (FTICALIX ~1Ra.LW IILK SHttiaHlOCIOR swrrams L. Bovino , T. Burke, R. Youmans, M. Weiner, J. Carter U.S. Ar~ Electronics...fabrication of all of our optically activated switches. B.e.fer.enc.es. 1. L. Bovino , R. Youmans, T. Burke, M.Weiner, "Modulator Circuits Using Q...tically Activated Switches", Record of 16th Power Modulator SYJll>o- siurn, pp 235-239, June 1984. 2. M. Weiner, T. Burke, R. Youmans, L. Bovino , J

  7. All-optical noninvasive chaos control of a semiconductor laser.

    PubMed

    Schikora, S; Wünsche, H-J; Henneberger, F

    2008-08-01

    We demonstrate experimentally control of a chaotic system on time scales much shorter than in any previous study. Combining a multisection laser with an external Fabry-Perot etalon, the chaotic output transforms into a regular intensity self-pulsation with a frequency in the 10-GHz range. The control is noninvasive as the feedback from the etalon is minimum when the target state is reached. The optical phase is identified as a crucial control parameter. Numerical simulations agree well with the experimental data and uncover global control properties.

  8. The Deposition of Electro-Optic Films on Semiconductors

    DTIC Science & Technology

    1993-10-08

    Electro - optic properties of KNbO3 films on MgO are found to be similar to bulk, although the scattering losses are very high for these films. In comparison KNbO3 films grown on KTaO3 exhibit low losses of less than 8 dB, while losses for films on spinel showed to be in between those two. The variety of substrates provide us with differences in lattice mismatch, refractive index mismatch, surface morphologies, and microstructure, all of which influence loss

  9. The Deposition of Electro-Optic Films on Semiconductors

    DTIC Science & Technology

    1994-09-26

    Optical Waveguides," I ~T. M . Graettinger, D. J. Lichtenwalner, A. F. Chow, 0. Auciello, and A. I. Kingon, ISIF 1994 Proceedings, submitted to Integrated3...Ferroelectrics. Appendix 2. "Growth of Epitaxial KNbO3 Thin Films," Thomas M . Graettinger,I P. A. Morris, A. Roshko, A. I. Kingon, 0. Auciello, D. J...34Epitaxial KNb03 Thin Films on KTa03, MgAI204, and MgO Substrates,ŗ A. F. Chow, D. J. Lichtenwalner, R. R. Woolcott, Jr., T. M . Gatigr 0. Auciello, and A. I

  10. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    NASA Astrophysics Data System (ADS)

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-08-01

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception-and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In2O3 (ITO)-converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein-Moss shift that are consistent with previous studies on In2O3 single crystals and thin films.

  11. Two semiconductor ring lasers coupled by a single-waveguide for optical memory operation

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Coomans, Werner; Gelens, Lendert

    2014-05-01

    Semiconductor ring lasers are semiconductor lasers where the laser cavity consists of a ring-shaped waveguide. SRLs are highly integrable and scalable, making them ideal candidates for key components in photonic integrated circuits. SRLs can generate light in two counterpropagating directions between which bistability has been demonstrated. Hence, information can be coded into the emission direction. This bistable operation allows SRLs to be used in systems for all-optical switching and as all-optical memories. For the demonstration of fast optical flip-flop operation, Hill et al. [Nature 432, 206 (2004)] fabricated two SRLs coupled by a single waveguide, rather than a solitary SRL. Nevertheless, the literature shows that a single SRL can also function perfectly as an all-optical memory. In our recent paper [W. Coomans et al., Phys. Rev. A 88, 033813, (2013)], we have raised the question whether coupling two SRLs to realize a single optical memory has any advantage over using a solitary SRL, taking into account the obvious disadvantage of a doubled footprint and power consumption. To provide the answer, we have presented in that paper a numerical study of the dynamical behavior of semiconductor ring lasers coupled by a single bus waveguide, both when weakly coupled and when strongly coupled. We have provided a detailed analysis of the multistable landscape in the coupled system, analyzed the stability of all solutions and related the internal dynamics in the individual lasers to the field effectively measured at the output of the waveguide. We have shown which coupling phases generally promote instabilities and therefore need to be avoided in the design. Regarding all-optical memory operation, we have demonstrated that there is no real advantage for bistable memory operation compared to using a solitary SRL. An increased power suppression ratio has been found to be mainly due to the destructive interference of the SRL fields at the low power port. Also

  12. Enhanced 10 Gb/s operations of directly modulated reflective semiconductor optical amplifiers without electronic equalization.

    PubMed

    Presi, M; Chiuchiarelli, A; Corsini, R; Choudury, P; Bottoni, F; Giorgi, L; Ciaramella, E

    2012-12-10

    We report enhanced 10 Gb/s operation of directly modulated bandwidth-limited reflective semiconductor optical amplifiers. By using a single suitable arrayed waveguide grating we achieve simultaneously WDM demultiplexing and optical equalization. Compared to previous approaches, the proposed system results significantly more tolerant to seeding wavelength drifts. This removes the need for wavelength lockers, additional electronic equalization or complex digital signal processing. Uniform C-band operations are obtained experimentally with < 2 dB power penalty within a wavelength drift of 10 GHz (which doubles the ITU-T standard recommendations).

  13. Semiconductor optical amplifiers for the 1000-1100-nm spectral range

    SciTech Connect

    Lobintsov, A A; Shramenko, M V; Yakubovich, S D

    2008-07-31

    Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

  14. Tunable directly modulated fiber ring laser using a reflective semiconductor optical amplifier for WDM access networks.

    PubMed

    Lin, Zih-Rong; Liu, Cheng-Kuang; Jhang, Yu-Jhu; Keiser, Gerd

    2010-08-16

    We have proposed a stable, wideband, and tunable directly modulated fiber ring laser (TDMFRL) by using a reflective semiconductor optical amplifier (RSOA) and an optical tunable filter (OTF). For use in a bidirectional access network, the TDMFRL not only generates downstream data traffic but also serves as the wavelength-selecting injection light source for the Fabry-Pérot laser diode (FP-LD) located at the subscriber site. We experimentally demonstrated a bidirectional transmission at 1.25-Gb/s direct modulation over a 25-km single-mode fiber (SMF), thereby showing good performance in a wavelength division multiplexing (WDM) access network.

  15. Optical clock division based on dual-wavelength mode-locked semiconductor fiber ring laser.

    PubMed

    Zhang, Weiwei; Sun, Junqiang; Wang, Jian; Zhang, Xingliang; Huang, Dexiu

    2008-07-21

    We have reported the optical clock division utilizing an injected mode-locked fiber ring laser incorporating semiconductor optical amplifiers (SOAs) and a dispersion compensation fiber (DCF). The clock division is mainly caused by the modulation competition between two wavelength components while both of them satisfy the harmonic mode-locking condition at the newly generated frequency. Stable second, third, and fourth clock divisions are obtained by properly adjusting the polarization controllers inside the ring cavity when a 10-GHz clock signal without any sub-harmonic frequency component is injected into the cavity. The radio-frequency spectra show good qualities of the obtained clock division trains.

  16. Comparison of the fiber optic dosimeter and semiconductor dosimeter for use in diagnostic radiology

    NASA Astrophysics Data System (ADS)

    Yoo, W. J.; Shin, S. H.; Sim, H. I.; Hong, S.; Kim, S. G.; Jang, J. S.; Kim, J. S.; Jeon, H. S.; Kwon, G. W.; Jang, K. W.; Cho, S.; Lee, B.

    2014-05-01

    A fiber-optic dosimeter (FOD) was fabricated using a plstic scintillating fiber, a plastic optical fiber, and a multi-pixel photon counter to measure entrance surface dose (ESD) in diagnostic radiology. Under changing tube current and irradition time of the digital radiography (DR) system, we measured the scintillating light and the ESD simultaneously. As experiemtnal results, the total counts of the FOD were changed in a manner similar to the ESDs of the semiconductor dosimeter (SCD). In conclusion, we demonstrated that the proposed FOD minimally affected the diagnostic information of DR image while the SCD caused serious image artifacts.

  17. Complexity and bandwidth enhancement in unidirectionally coupled semiconductor lasers with time-delayed optical feedback

    NASA Astrophysics Data System (ADS)

    Kanno, Kazutaka; Uchida, Atsushi; Bunsen, Masatoshi

    2016-03-01

    We numerically investigate the frequency bandwidth and the autocorrelation characteristics of chaotic temporal wave forms in unidirectionally coupled semiconductor lasers with time-delayed optical feedback. We evaluate the complexity of the chaotic temporal wave forms by using Lyapunov exponents. We found that larger maximum Lyapunov exponents can be obtained for smaller peak values of the autocorrelation function at the delay time of the optical feedback. On the contrary, the maximum Lyapunov exponent is independent from the frequency bandwidth of the chaotic temporal wave forms.

  18. CW cavity ring-down spectroscopy (CRDS) with a semiconductor optical amplifier as intensity modulator

    NASA Astrophysics Data System (ADS)

    Huang, Haifeng; Lehmann, Kevin K.

    2008-09-01

    We summarized both advantages and disadvantages of different light modulators used in cw-CRDS experiments. For the first time, we introduce the use of a semiconductor optical amplifier (SOA) as light modulator in cw-CRDS. A direct comparison of the sensitivity realized on the same instrument using an SOA as modulator with use of an acousto-optic modulator (AOM) has been made. It is found that the SOA has larger extinction ratio (˜81 dB) than the AOM. For our instrument, with single-shot initial signal-to-noise ratio of 1400:1, these two modulators are found giving equivalent sensitivity.

  19. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, Raymond J.; Benett, William J.; Mills, Steven T.

    1997-01-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

  20. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, R.J.; Benett, W.J.; Mills, S.T.

    1997-04-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

  1. Optical characterization of individual semiconductor nanostructures using a scanning tunneling microscope.

    PubMed

    Tsuruoka, Tohru; Ushioda, Sukekatsu

    2004-01-01

    By injecting low-energy minority carriers from the tip of a scanning tunneling microscope (STM) and analyzing the light emitted from the tip-sample gap of the STM, it is possible to study the optical and electronic properties of individual semiconductor nanostructures with an extremely high spatial resolution close to the atomic scale. This technique has been applied to investigate the transport properties of hot electrons injected into AlGaAs/GaAs quantum well structures and the optical properties of single self-assembled InAs/AlGaAs quantum dots. The physical principles, usefulness and future expectations of this novel technique are discussed.

  2. Investigation of 16 × 10 Gbps DWDM System Based on Optimized Semiconductor Optical Amplifier

    NASA Astrophysics Data System (ADS)

    Rani, Aruna; Dewra, Sanjeev

    2017-08-01

    This paper investigates the performance of an optical system based on optimized semiconductor optical amplifier (SOA) at 160 Gbps with 0.8 nm channel spacing. Transmission distances up to 280 km at -30 dBm input signal power and up to 247 km at -32 dBm input signal power with acceptable bit error rate (BER) and Q-factor are examined. It is also analyzed that the transmission distance up to 292 km has been covered at -28 dBm input signal power using Dispersion Shifted (DS)-Normal fiber without any power compensation methods.

  3. Quantum noise evolution under optical Kerr effects and two-photon absorption in a semiconductor waveguide.

    PubMed

    Ju, Heongkyu; Lee, Eun-Cheol

    2008-03-03

    We theoretically study evolution of quantum noise of ultrashort pulsed light that propagates a semiconductor waveguide where nonlinear optical interaction occurs. Optical quantum noise is simulated by statistical (pseudo-)random distribution of phasors in a phase space with Gaussian probability weight, and each phasor evolution is governed by beam propagation method. It is shown that Kerr effects squeeze quantum noise of coherent light in a phase space such that photon-number noise is unchanged while phase noise increasing with uncertainty area invariant. However, two-photon absorption alters the photon-number statistics of light unlike Kerr effects.

  4. Influence of semiconductor-laser phase noise on coherent optical communication systems

    SciTech Connect

    Tamburrini, M.; Spano, P.; Piazzolla, S.

    1983-03-01

    Several authors have recently investigated phase noise in semiconductor lasers and the related problems that arise when such lasers are employed in coherent optical communication systems. We report accurate measurements of high-frequency phase noise in single-mode injection lasers that show the presence of a peak in the phase-noise spectrum at the same frequency as that of the amplitude-noise peak. This peculiar phenomenon must be taken into account when one studies the characteristics of coherent optical communication systems.

  5. Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-10-01

    We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

  6. Spontaneous locking of optical vortices in coupled semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Yadin, Yoav; Scheuer, Jacob; Gross, Yoav; Orenstein, Meir

    2014-09-01

    Non-conventional emission of light, comprising engaged rotating light cogs, is measured and analyzed. The source of this unique emission is an array of coupled surface emitting lasers, each emitting an optical vortex. The complex rotating light structures are formed spontaneously by specific combinations of the individual vortices, each carrying two types of "charge": orbital angular momentum (±1 topological charge) and a relative engagement phase (0 or π). These charges determine the specific form in which the individual rotating fields are engaged to generate the emanated light gear. The experimentally observed formations and dynamic evolution of the light gears stem from the complex nonlinear dynamics of the coupled rotating-field emitters, a mechanism which we have successfully modeled and utilized for interpreting the obtained results. The engaged light gears can be used in controlled generation and transmission of multiple degrees of freedom photons, for high-bit-rate classic and quantum telecommunications, particle manipulation, and super-resolution imaging.

  7. Optically induced multispin entanglement in a semiconductor quantum well.

    PubMed

    Bao, Jiming; Bragas, Andrea V; Furdyna, Jacek K; Merlin, Roberto

    2003-03-01

    According to quantum mechanics, a many-particle system is allowed to exhibit non-local behaviour, in that measurements performed on one of the particles can affect a second one that is far away. These so-called entangled states are crucial for the implementation of most quantum information protocols and, in particular, gates for quantum computation. Here we use ultrafast optical pulses and coherent techniques to create and control spin-entangled states in an ensemble of non-interacting electrons bound to donors (at least three) and at least two Mn2+ ions in a CdTe quantum well. Our method, relying on the exchange interaction between localized excitons and paramagnetic impurities, can in principle be applied to entangle an arbitrarily large number of spins.

  8. Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, Xiaoli

    1989-01-01

    Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

  9. Controlling of the optical properties of the solutions of the PTCDI-C8 organic semiconductor

    NASA Astrophysics Data System (ADS)

    Erdoğan, Erman; Gündüz, Bayram

    2016-09-01

    N,N'-Dioctyl-3,4,9,10 perylenedicarboximide (PTCDI-C8) organic semiconductor have vast applications in solar cells, thermoelectric generators, thin film photovoltaics and many other optoelectronic devices. These applications of the materials are based on their spectral and optical properties. The solutions of the PTCDI-C8 for different molarities were prepared and the spectral and optical mesaurements were analyzed. Effects of the molarities on optical properties were investigated. Vibronic structure has been observed based on the absorption bands of PTCDI-C8 semiconductor with seven peaks at 2.292, 2.451, 2.616, 3.212, 3.851, 4.477 and 4.733 eV. The important spectral parameteres such as molar/mass extinction coefficients, absorption coefficient of the PTCDI-C8 molecule were calculated. Optical properties such as angle of incidence/refraction, optical band gap, real and imaginary parts of dielectric constant, loss factor and electrical susceptibility of the the PTCDI-C8 were obtained. Finally, we discussed these parameters for optoelectronic applications and compared with related parameters in literature.

  10. Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

    SciTech Connect

    Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

    2007-11-01

    We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity.

  11. Two-Color Coherent Control of Optical Bistability in Asymmetric Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Li, Jia-Hua; Hao, Xiang-Ying

    We investigate optical bistability in intersubband transitions of an asymmetric semiconductor quantum well structure that has equidistant transitions between three subbands of the system and is placed in a unidirectional cavity. The system is simultaneously coupled by a fundamental field and its second harmonic. The second harmonic field acts as a control field and significantly influences the optical bistability. In addition, the two-color coherent control of optical bistability by the relative phase of the fundamental and the second harmonic fields is shown. The influence of the electronic cooperation parameter on the OB behavior is also discussed. This investigation may be used for optimizing and controlling the optical switching process in the SQW solid-state system, which is much more practical than that in the atomic system because of its flexible design and the controllable interference strength.

  12. Nonlinear optics response of semiconductor quantum wells under high magnetic fields

    SciTech Connect

    Chemla, D.S.

    1993-07-01

    Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW`s as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H {yields} {infinity}. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed.

  13. The optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

    PubMed

    Qiu, Zong-Bo; Zhu, Xin-Jun; Li, Fang-Min; Liu, Xiao; Yue, Ming

    2007-07-01

    Lasers have been widely used in the field of biology along with the development of laser technology, but the mechanism of the bio-effect of lasers is not explicit. The objective of this paper was to test the optical effect of a laser on protecting wheat from UV-B damage. A patent instrument was employed to emit semiconductor laser (wavelength 650 nm) and incoherent red light, which was transformed from the semiconductor laser. The wavelength, power and lightfleck diameter of the incoherent red light are the same as those of the semiconductor laser. The semiconductor laser (wavelength 650 nm, power density 3.97 mW mm(-2)) and incoherent red light (wavelength 650 nm, power density 3.97 mW mm(-2)) directly irradiated the embryo of wheat seeds for 3 min respectively, and when the seedlings were 12-day-old they were irradiated by UV-B radiation (10.08 kJ m(-2)) for 12 h in the dark. Changes in the concentration of malondialdehyde (MDA), hydrogen peroxide (H(2)O(2)), glutathione (GSH), ascorbate (AsA), carotenoids (CAR), the production rate of superoxide radical (O(2)(-)), the activities of peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) and the growth parameters of seedlings (plant height, leaf area and fresh weight) were measured to test the optical effect of the laser. The results showed that the incoherent red light treatment could not enhance the activities of SOD, POD and CAT and the concentration of AsA and CAR. When the plant cells were irradiated by UV-B, the incoherent red light treatment could not eliminate active oxygen and prevent lipid peroxidation in wheat. The results also clearly demonstrate that the plant DNA was damaged by UV-B radiation and semiconductor laser irradiance had the capability to protect plants from UV-B-induced DNA damage, while the incoherent red light could not. This is the first investigation reporting the optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

  14. Intrinsic optical bistability in a strongly driven Rydberg ensemble

    NASA Astrophysics Data System (ADS)

    de Melo, Natalia R.; Wade, Christopher G.; Šibalić, Nikola; Kondo, Jorge M.; Adams, Charles S.; Weatherill, Kevin J.

    2016-06-01

    We observe and characterize intrinsic optical bistability in a dilute Rydberg vapor. The bistability is characterized by sharp jumps between states of low and high Rydberg occupancy with jump-up and -down positions displaying hysteresis depending on the direction in which the control parameter is changed. We find that the shift in frequency of the jump point scales with the fourth power of the principal quantum number. Also, the width of the hysteresis window increases with increasing principal quantum number, before reaching a peak and then closing again. The experimental results are consistent with predictions from a simple theoretical model based on semiclassical Maxwell-Bloch equations including the effects of interaction-induced broadening and level shifts. These results provide insight into the dynamics of driven dissipative systems.

  15. Colloquium: Atomic quantum gases in periodically driven optical lattices

    NASA Astrophysics Data System (ADS)

    Eckardt, André

    2017-01-01

    Time-periodic forcing in the form of coherent radiation is a standard tool for the coherent manipulation of small quantum systems like single atoms. In the last years, periodic driving has more and more also been considered as a means for the coherent control of many-body systems. In particular, experiments with ultracold quantum gases in optical lattices subjected to periodic driving in the lower kilohertz regime have attracted much attention. Milestones include the observation of dynamic localization, the dynamic control of the quantum phase transition between a bosonic superfluid and a Mott insulator, as well as the dynamic creation of strong artificial magnetic fields and topological band structures. This Colloquium reviews these recent experiments and their theoretical description. Moreover, fundamental properties of periodically driven many-body systems are discussed within the framework of Floquet theory, including heating, relaxation dynamics, anomalous topological edge states, and the response to slow parameter variations.

  16. Optically driven Archimedes micro-screws for micropump application.

    PubMed

    Lin, Chih-Lang; Vitrant, Guy; Bouriau, Michel; Casalegno, Roger; Baldeck, Patrice L

    2011-04-25

    Archimedes micro-screws have been fabricated by three-dimensional two-photon polymerization using a Nd:YAG Q-switched microchip laser at 532nm. Due to their small sizes they can be easily manipulated, and made to rotate using low power optical tweezers. Rotation rates up to 40 Hz are obtained with a laser power of 200 mW, i.e. 0.2 Hz/mW. A photo-driven micropump action in a microfluidic channel is demonstrated with a non-optimized flow rate of 6 pL/min. The optofluidic properties of such type of Archimedes micro-screws are quantitatively described by the conservation of momentum that occurs when the laser photons are reflected on the helical micro-screw surface.

  17. Optical dispersion of ternary II-VI semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Liu, Xinyu; Furdyna, J. K.

    2004-06-01

    The wavelength dependence of the refractive indices n of a series of II-VI ternary alloys—ZnCdSe, ZnBeSe, ZnMgSe, ZnMnSe, ZnCdTe, ZnMnTe, ZnMgSe, and ZnSeTe—were measured at frequencies below their respective energy gaps using the combined techniques of optical reflectivity and the prism coupler method. To facilitate the analysis of the results—including those obtained in the wavelength region near the fundamental energy gap—we have modified the semiempirical single-effective-oscillator (SEO) model of n by introducing an additional term that explicitly accounts for interband transitions at the fundamental gap. Using the SEO model modified in this manner to fit the wavelength dependence of n, a set of semiempirical parameters was established for the above ternary II-VI-based alloys, where the fitting parameters for each alloy family are themselves expressed as functions of the alloy composition. The availability of these parameters makes it possible to calculate the index of refraction of any given II-VI ternary alloy for any composition and at any wavelength. Furthermore, these parameters provide valuable physical insights, such as the relationship between the covalency (or ionicity) of the material and its refractive index. In addition to its fundamental usefulness, this approach can—by appropriate extrapolation—also be used for obtaining the dispersion properties for "hypothetical" zinc blende compounds that do not form under equilibrium crystal growth conditions (such as MnTe, MnSe, or BeSe).

  18. A study on the optical parts for a semiconductor laser module

    NASA Astrophysics Data System (ADS)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik; Jang, Kwang-Ho; Kang, Seung-Goo

    2014-11-01

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  19. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    PubMed Central

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-01-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles. PMID:26314911

  20. Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors

    NASA Astrophysics Data System (ADS)

    Nashy, El-Shahat H. A.; Al-Ashkar, Emad; Abdel Moez, A.

    2012-02-01

    Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

  1. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    NASA Astrophysics Data System (ADS)

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-08-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles.

  2. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching.

    PubMed

    Born, Brandon; Krupa, Jeffrey D A; Geoffroy-Gagnon, Simon; Holzman, Jonathan F

    2015-08-28

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles.

  3. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    SciTech Connect

    Bakry, A.; Abdulrhmann, S.; Ahmed, M.

    2016-06-15

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  4. Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors.

    PubMed

    Nashy, El-Shahat H A; Al-Ashkar, Emad; Moez, A Abdel

    2012-02-01

    Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

  5. Optical arbitrary waveform generation based on multi-wavelength semiconductor fiber ring laser

    NASA Astrophysics Data System (ADS)

    Li, Peili; Ma, Xiaolu; Shi, Weihua; Xu, Enming

    2017-09-01

    A new scheme of generating optical arbitrary waveforms based on multi-wavelength semiconductor fiber ring laser (SFRL) is proposed. In this novel scheme, a wide and flat optical frequency comb (OFC) is provided directly by multi-wavelength SFRL, whose central frequency and comb spacing are tunable. OFC generation, de-multiplexing, amplitude and phase modulation, and multiplexing are implementing in an intensity and phase tunable comb filter, as induces the merits of high spectral coherence, satisfactory waveform control and low system loss. By using the mode couple theory and the transfer matrix method, the theoretical model of the scheme is established. The impacts of amplitude control, phase control, number of spectral line, and injection current of semiconductor optical amplifier (SOA) on the waveform similarity are studied using the theoretical model. The results show that, amplitude control and phase control error should be smaller than 1% and 0.64% respectively to achieve high similarity. The similarity of the waveform is improved with the increase of the number of spectral line. When the injection current of SOA is in a certain range, the optical arbitrary waveform reaches a high similarity.

  6. Optical properties of semiconductor-metal composite thin films in the infrared region

    NASA Astrophysics Data System (ADS)

    Nagendra, C. L.; Lamb, James L.

    1995-07-01

    Germanium:silver (Ge:Ag) composite thin films having different concentrations of Ag, ranging from 7% to 40%, have been prepared by dc cosputtering of Ge and Ag. The films' surface morphology and optical properties have been characterized using transmission electron microscopy and infrared spectrophotometry. It is seen that, although the films that contain lower concentrations of Ag have islandlike morphology (i.e., Ag particles distributed in a Ge matrix), the higher metallic concentration films tend to have a symmetric distribution of Ag and Ge. The optical constants (i.e., refractive index n and absorption index k) derived from the measured optical properties show a semiconductor behavior even as high as 40% of Ag concentration, beyond which the metallic properties dominate over the entire infrared spectrum. Comparison of the n and k data with the two well-known effective medium theories, namely, the Maxwell-Garnett theory and the Bruggeman theory, shows that both theories have limited scope in predicting the optical properties of semiconductor-metal composite films in the infrared region. However, an empirical polynomial equation can simulate the experimental

  7. Electrical and optical conductivities of hole gas in p-doped bulk III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Mawrie, Alestin; Halder, Pushpajit; Ghosh, Barun; Ghosh, Tarun Kanti

    2016-09-01

    We study electrical and optical conductivities of hole gas in p-doped bulk III-V semiconductors described by the Luttinger Hamiltonian. We provide exact analytical expressions of the Drude conductivity, inverse relaxation time for various impurity potentials, Drude weight, and optical conductivity in terms of the Luttinger parameters γ1 and γ2. The back scattering is completely suppressed as a result of the helicity conservation of the heavy and light hole states. The energy dependence of the relaxation time for the hole states is different from the Brooks-Herring formula for electron gas in n-doped semiconductors. We find that the inverse relaxation time of heavy holes is much less than that of the light holes for Coulomb-type and Gaussian-type impurity potentials and vice-versa for a short-range impurity potential. The Drude conductivity increases non-linearly with the increase in the hole density. The exponent of the density dependence of the conductivity is obtained in the Thomas-Fermi limit. The Drude weight varies linearly with the density even in the presence of the spin-orbit coupling. The finite-frequency optical conductivity goes as √{ ω} , and its amplitude strongly depends on the Luttinger parameters. The Luttinger parameters can be extracted from the optical conductivity measurement.

  8. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    NASA Astrophysics Data System (ADS)

    Bakry, A.; Abdulrhmann, S.; Ahmed, M.

    2016-06-01

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  9. Optical absorption in semiconductor quantum dots coupling to dispersive phonons of infinite modes

    NASA Astrophysics Data System (ADS)

    Ding, Zhiwen; Wang, Qin; Zheng, Hang

    2012-10-01

    Optical absorption spectrum of semiconductor quantum dot is investigated by means of an analytical approach based on the Green's function for different forms of coupling strength in an unified method by using the standard model with valence and conduction band levels coupled to dispersive quantum phonons of infinite modes. The analytical expression of the optical absorption coefficient in semiconductor quantum dots is obtained and by this expression the line shape and the peak position of the absorption spectrum are procured. The relation between the properties of absorption spectrum and the forms of coupling strength is clarified, which can be referenced for choosing the proper form of the coupling strength or spectral density to control the features of absorption spectrum of quantum dot. The coupling and confinement induced energy shift and intensity decrease in the absorption spectrum are determined precisely for a wide range of parameters. The results show that the activation energy of the optical absorption is reduced by the effect of exciton-phonon coupling and photons with lower frequencies could also be absorbed in absorption process. With increase of the coupling constant, the line shape of optical absorption spectrum broadens and the peak position moves to lower photon energy with a rapid decrease in intensity at the same time. Both the coupling induced red shift and the confinement induced blue shift conduce to decrease in the intensity of absorption spectrum. Furthermore, this method may have application potential to other confined quantum systems.

  10. Optical waveguide beam splitters based on hybrid metal-dielectric-semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Yunyun; Liang, Junwu; Zhang, Qinglin; Zhou, Zidong; Li, Honglai; Fan, Xiaopeng; Wang, Xiaoxia; Fan, Peng; Yang, Yankun; Guo, Pengfei; Zhuang, Xiujuan; Zhu, Xiaoli; Liao, Lei; Pan, Anlian

    2015-11-01

    Miniature integration is desirable for the future photonics circuit. Low-dimensional semiconductor and metal nanostructures is the potential building blocks in compact photonic circuits for their unique electronic and optical properties. In this work, a hybrid metal-dielectric-semiconductor nanostructure is designed and fabricated to realizing a nano-scale optical waveguide beam splitter, which is constructed with the sandwiched structure of a single CdS nanoribbon/HfO2 thin film/Au nanodisk arrays. Micro-optical investigations reveal that the guided light outputting at the terminal end of the CdS ribbon is well separated into several light spots. Numerical simulations further demonstrate that the beam splitting mechanism is attributed to the strong electromagnetic coupling between the Au nanodisks and light guided in the nanoribbon. The number of the split beams (light spots) at the terminal end of the nanoribbon is mainly determined by the number of the Au nanodisk rows, as well as the distance of the blank region between the nanodisks array and the end of the CdS ribbon, owing to the interference between the split beams. These optical beam splitters may find potential applications in high-density integrated photonic circuits and systems.

  11. Optical injection of quantum dash semiconductor lasers at 1550nm for tunable photonic oscillators

    NASA Astrophysics Data System (ADS)

    Pochet, M.; Naderi, N. A.; Kovanis, V.; Lester, L. F.

    2011-02-01

    In this manuscript, we will theoretically compute and experimentally investigate the dynamics of an optically injected nanostructure laser as a function of the injection strength and the optical detuning frequency. A model describing the optically-injected semiconductor laser is derived in dimensionless format that accounts for the large nonlinear gain component associated with nanostructure semiconductor lasers through the gain coefficient's derivative with respect to perturbations in the carrier and photon density. The nonlinear gain (carrier) relaxation rate and gain compression coefficient account for the perturbation in the slave laser's photon density, and are theoretically shown to have a strong impact on the level of stability exhibited by the optically-injected laser. The theoretical model is experimentally verified through the optical-injection of a quantum-dash Fabry-Perot laser at an operating wavelength of 1550 nm. The quantum-dash laser's large damping rate and sufficiently small linewidth enhancement factor are observed to inhibit period-doubling and chaotic operation under zero frequency-detuning conditions. Additionally, the optically injected quantum-dash laser is found to exhibit a large period-one operational state as the injection strength and the detuning frequency are varied, resulting in a highly tunable microwave frequency in the coupled system's equilibrium state. The enhanced and undamped relaxation oscillations of the period-one state are discussed as a building block for tunable photonic oscillators in various RF photonics applications. Finally a path towards realizing an optically-injected diode laser with a THz resonance frequency will be reviewed.

  12. Design and analysis of various multifunctional operations at ultrahigh speed by using a semiconductor optical amplifier-Mach-Zehnder interferometer

    NASA Astrophysics Data System (ADS)

    Lovkesh; Marwaha, Anupma

    2016-03-01

    Various multifunctional operations are performed by proposing designs of optical adder, subtractor, comparator, and decoder at 60 Gb/s. In all operations, constructive interference is produced by choosing optimized parameters, i.e., optical pulse generator power, input power, semiconductor optical amplifier-Mach-Zehnder interferometer parameters, and so on, for delivering a true output signal. An optical pulse-generated signal is required for all operations except addition, subtraction and equal to in a comparator.

  13. Goos-Hänchen effect for optical vibrational modes in a semiconductor structure.

    PubMed

    Villegas, Diosdado; Arriaga, J; de León-Pérez, Fernando; Pérez-Álvarez, R

    2017-03-29

    We study the tunneling of optical vibrational modes with transverse horizontal polarization that impinge, at a given angle, on a semiconductor heterostructure. We find a large influence of the Goos-Hänchen shift on tunneling times. In particular, a Goos-Hänchen shift larger than the barrier thickness is reported for the first time. The relation between Goos-Hänchen and Hartman effects is also discussed. The identity that equals the dwell time to the sum of transmission and interference times, previously derived for one-dimensional tunneling problems, is extended to the two-dimensional case. Closed-form expressions are developed for the relevant quantities. Instead of using the standard approach, the interference time is computed from the vibrational energy density. The present study could be useful for the design of semiconductor devices.

  14. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    SciTech Connect

    Kim, Chang-Hwan

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  15. Goos–Hänchen effect for optical vibrational modes in a semiconductor structure

    NASA Astrophysics Data System (ADS)

    Villegas, Diosdado; Arriaga, J.; de León-Pérez, Fernando; Pérez-Álvarez, R.

    2017-03-01

    We study the tunneling of optical vibrational modes with transverse horizontal polarization that impinge, at a given angle, on a semiconductor heterostructure. We find a large influence of the Goos–Hänchen shift on tunneling times. In particular, a Goos–Hänchen shift larger than the barrier thickness is reported for the first time. The relation between Goos–Hänchen and Hartman effects is also discussed. The identity that equals the dwell time to the sum of transmission and interference times, previously derived for one-dimensional tunneling problems, is extended to the two-dimensional case. Closed-form expressions are developed for the relevant quantities. Instead of using the standard approach, the interference time is computed from the vibrational energy density. The present study could be useful for the design of semiconductor devices.

  16. Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

    2003-01-01

    Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

  17. Chaos synchronization based on a continuous chaos control method in semiconductor lasers with optical feedback.

    PubMed

    Murakami, A; Ohtsubo, J

    2001-06-01

    Chaos synchronization using a continuous chaos control method was studied in two identical chaotic laser systems consisting of semiconductor lasers and optical feedback from an external mirror. Numerical calculations for rate equations indicate that the stability of chaos synchronization depends significantly on the external mirror position. We performed a linear stability analysis for the rate equations. Our results show that the stability of the synchronization is much influenced by the mode interaction between the relaxation oscillation frequency of the semiconductor laser and the external cavity frequency. Due to this interaction, an intensive mode competition between the two frequencies destroys the synchronization, but stable synchronization can be achieved when the mode competition is very weak.

  18. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

    DOE PAGES

    Donev, E. U.; Suh, J. Y.; Lopez, R.; ...

    2008-01-01

    We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model.more » The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.« less

  19. Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots

    SciTech Connect

    Zhu, J.G.; White, C.W.; Withrow, S.P.

    1996-11-01

    Nanocrystals of semiconductor materials have been fabricated in SiO{sub 2} by ion implantation and subsequent thermal annealing. Strong red photoluminescence (PL) peaked around 750 nm has been observed in samples containing Si nanocrystals in SiO{sub 2}. The Si nanocrystals in the samples with optimized PL intensities are a few nanometers in diameter. Difference in the absorption bandgap energies and the PL peak energies are discussed. Significant influence of implantation sequence on the formation of compound semiconductor nanocrystals are demonstrated with the GaAs in the SiO{sub 2} system. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage if Ga is implanted first. A single surface phonon mode has been observed in the infrared reflectance measurement from samples containing GaAs nanocrystals.

  20. Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

    2003-01-01

    Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

  1. Applications of Non-Crystalline Materials — C. REAL TIME OPTICAL RECORDING ON THIN FILMS OF AMORPHOUS SEMICONDUCTORS

    NASA Astrophysics Data System (ADS)

    Mitkova, Maria

    The following sections are included: * Introduction * Amorphous Semiconductors as Optical Storage Medium * Principles and Results on Real-time Optical Recording * Digital optical recording * Digital optical recording due to ablation of the films by illumination with light * Digital optical recording due to coagulation of an island film * Digital optical recording due to phase transition * Digital optical recording due to photoinduced surface deposition of metallic silver * Principles of holographic recording * Recording and readout * Classification of the holograms * Diffraction efficiency * Results in holographic recording on chalcogenide glasses * Future Trends * Acknowledgments * References

  2. On the correct modeling of semiconductor optical amplifier RIN and phase noise for optical phase shift keyed communication systems.

    PubMed

    Janer, Carlos L; Connelly, Michael J

    2010-12-20

    Phase modulation schemes are attracting much interest for use in ultra-fast optical communication systems because they are much less affected by fiber nonlinearities than conventional modulation formats. Semiconductor optical amplifiers (SOAs) can be used to amplify and process phase modulated signals. However, existing SOA nonlinear phase noise (NLPN) models are simplistic and, sometimes, inaccurate. It is, therefore, important to correctly model their behavior since NLPN is the main drawback in these applications. In this paper we show that a more accurate model can be used leading to simple nonlinear noise expressions at the SOA output of differential phase shift keying systems. To demonstrate the utility of this model, we have used it to calculate the optical signal to noise ratio penalties introduced by a power booster SOA and the first inline amplifier of a 40 Gb/s NRZ-DQPSK single channel link. The model parameters have been estimated from measurements taken of a commercial SOA.

  3. A novel method of developing all-optical frequency encoded memory unit exploiting nonlinear switching character of semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Kumar Garai, Sisir; Mukhopadhyay, Sourangshu

    2010-10-01

    The very fast running optical memory and optical logic gates are the basic building blocks for any optical computing data processing system. Realization of a very fast memory-cell in the optical domain is very challenging. In the last two decades many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitation because of low switching response of the active devices. In our present communication the authors propose a method of developing a frequency encoded memory unit based on the switching action of semiconductor optical amplifier (SOA). Nonlinear polarization rotation characters of SOA and 'SOA based Mach-Zehnder Interferometer' switch, i.e. 'SOA-MZI' switch, are exploited for the purpose of some switching action with least switching power (<-3 dB m) and high switching contrast ratio (20 dB). Here two logic states ('0' state and '1' state) of the memory is encoded by two different frequencies, which will remain unchanged throughout the data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. Though the SOA based switch runs with the operational speed 100 Gb/s, still due to the presence of the other optical components in the memory unit, the overall speed of the proposed system will come down to 10 Gb/s.

  4. Exact matter-wave vortices in a driven optical lattice

    NASA Astrophysics Data System (ADS)

    Deng, Yan; Hai, Wenhua; Zhou, Zheng

    2013-07-01

    We investigate vortex dynamics of a periodically driven Bose-Einstein condensate confined in a spatially two-dimensional optical lattice. An exact Floquet solution of the Gross-Pitaevskii equation is obtained for a certain parameter region which can be divided into the phase-jumping and phase-continuing regions. In the former region, the exact solution can describe spatiotemporal evolution of multiple vortices. For a small ratio of driving strength to optical lattice depth the vortices keep nearly unmoved. With the increase of the ratio, the vortices undergo an effective interaction and periodically evolve along some fixed circular orbits that leads the vortex dipoles and quadrupoles to produce and break alternatively. There is a critical ratio in the phase-jumping region beyond which the vortices generate and melt periodically. In the phase-continuing region, the condensate in the exact Floquet state evolves periodically without zero-density nodes. It is numerically demonstrated that the exact solution is stable under an initial perturbation for both parameter regions, except for a subregion of the phase-jumping region in which stability of the condensate is lost. However, the solution is structurally stable under a small parameter perturbation only for the phase-continuing region, while for the whole phase-jumping region the structural stability is destroyed. The results suggest a scheme for creating and controlling matter-wave vortices.

  5. Real-time monitoring of 2D semiconductor film growth with optical spectroscopy.

    PubMed

    Wei, Yaxu; Shen, Wanfu; Roth, Dietmar; Wu, Sen; Hu, Chunguang; Li, Yanning; Hu, Xiaotang; Hohage, Michael; Bauer, Peter; Sun, Lidong

    2017-08-30

    Real-time monitoring of the growth is essential for synthesizing high quality two dimensional transition-metal dichalcogenides (2D TMDs) with precisely controlled thickness. Here, we report the first real time in-situ optical spectroscopic study on the molecular beam epitxy (MBE) of atomically thin molybdenum diselenide (MoSe2) films on sapphire substrates using differential reflectance spectroscopy (DRS). The characteristic optical spectrum of MoSe2 monolayer is clearly distinct from that of bilayer allowing a precise control of the film thickness during the growth. Furthermore, the evolution of the characteristic DR spectrum of the MoSe2 thin film as a function of the thickness sheds light on the details of the growth process. Our result demonstrates the importance and the great potential of the real time in-situ optical spectroscopy for the realization of controlled growth of 2D semiconductor materials. Creative Commons Attribution license.

  6. Optical devices combining an organic semiconductor crystal with a two-dimensional inorganic diffraction grating

    SciTech Connect

    Kitazawa, Takenori; Yamao, Takeshi Hotta, Shu

    2016-02-01

    We have fabricated optical devices using an organic semiconductor crystal as an emission layer in combination with a two-dimensional (2D) inorganic diffraction grating used as an optical cavity. We formed the inorganic diffraction grating by wet etching of aluminum-doped zinc oxide (AZO) under a 2D cyclic olefin copolymer (COC) diffraction grating used as a mask. The COC diffraction grating was fabricated by nanoimprint lithography. The AZO diffraction grating was composed of convex prominences arranged in a triangular lattice. The organic crystal placed on the AZO diffraction grating indicated narrowed peaks in its emission spectrum under ultraviolet light excitation. These are detected parallel to the crystal plane. The peaks were shifted by rotating the optical devices around the normal to the crystal plane, which reflected the rotational symmetries of the triangular lattice through 60°.

  7. High efficiency 160 Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Han, Huining; Zhang, Fangdi; Yang, Wei; Cai, Libo; Zhang, Min; Ye, Peida

    2007-11-01

    Proposed in this paper is a high efficient 160Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot Semiconductor optical amplifier (QDSOA -TOAD). The performance of the wavelength converter under various operating conditions, such as different injected current densities, input pulse widths and input control pulse energies, is analyzed in terms of contrast ratio (CR) through numerical simulations. With the properly chosen parameters, a wavelength-converted signal with CR over 19.48 can be obtained.

  8. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  9. Demonstration of an Optical Isolator with a Semiconductor Guiding Layer that was Obtained by Use of a Nonreciprocal Phase Shift.

    PubMed

    Yokoi, H; Mizumoto, T; Shinjo, N; Futakuchi, N; Nakano, Y

    2000-11-20

    We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-mum wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.

  10. Optical modeling of induction-linac driven free-electron lasers

    SciTech Connect

    Scharlemann, E.T.; Fawley, W.M.

    1986-03-31

    The free-electron laser (FEL) simulation code FRED, developed at Lawrence Livermore National Laboratory (LLNL) primarily to model single-pass FEL amplifiers driven by induction linear accelerators, is described. The main emphasis is on the modeling of optical propagation in the laser and on the differences between the requirements for modeling rf-linac-driven vs. induction-linac-driven FELs. Examples of optical guiding and mode cleanup are presented for a 50 ..mu..m FEL.

  11. Nonlinear Optics of Semiconductors Using a Tunable Free-Electron Laser

    NASA Astrophysics Data System (ADS)

    Yang, Xinxing

    1995-01-01

    The short-pulse and ultrahigh intensity characteristics of the Vanderbilt free-electron laser (FEL) make it ideal for studying nonlinear optical properties of small band gap semiconductors. The FEL wavelength range also fortuitously corresponds to the band gaps of many technologically interesting semiconductors. For example, the FEL is a perfect light source for studying multiphoton processes, which can induce multiphoton transitions in measurable amounts. Multiphoton interaction techniques are important in the field of optical spectroscopy since they allow us to probe transition forbidden to single photon processes. This dissertation focuses on measurements using the FEL and other light sources to study Ge, InAs, and GaAs/AlAs asymmetric multiple quantum wells (MQWs). Several techniques were used, which include: photoluminescence, photoluminescence excitation spectroscopy, and Z-scan. The two-photon absorption in bulk Ge in the wavelength region near the two-photon absorption threshold was measured. In addition to its intensity, the FEL's tunability makes it possible optically pump a specific state. This technique also can be used for studying heterojunctions and MQWs. The interband and intersubband transitions of GaAs/AlAs asymmetric MQWs were measured. Another important area of materials research concerns chemical vapor deposited (CVD) diamond. Cathodoluminescence from annealed and unannealed CVD diamond films were measured using a low-energy electron beam. The measurements exhibit a pronounced difference between the luminescence spectra of annealed and unannealed CVD diamond. A significant temperature dependence in the luminescence has been observed.

  12. Spectrophotometric method for optical band gap and electronic transitions determination of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Sangiorgi, Nicola; Aversa, Lucrezia; Tatti, Roberta; Verucchi, Roberto; Sanson, Alessandra

    2017-02-01

    The optical band gap energy and the electronic processes involved are important parameters of a semiconductor material and it is therefore important to determine their correct values. Among the possible methods, the spectrophotometric is one of the most common. Several methods can be applied to determine the optical band gap energy and still now a defined consensus on the most suitable one has not been established. A highly diffused and accurate optical method is based on Tauc relationship, however to apply this equation is necessary to know the nature of the electronic transitions involved commonly related to the coefficient n. For this purpose, a spectrophotometric technique was used and we developed a graphical method for electronic transitions and band gap energy determination for samples in powder form. In particular, the n coefficient of Tauc equation was determined thorough mathematical elaboration of experimental results on TiO2 (anatase), ZnO, and SnO2. The results were used to calculate the band gap energy values and then compared with the information obtained by Ultraviolet Photoelectron Spectroscopy (UPS). This approach provides a quick and accurate method for band gap determination through n coefficient calculation. Moreover, this simple but reliable method can be used to evaluate the nature of electronic transition that occurs in a semiconductor material in powder form.

  13. Non-equilibrium optical phonon dynamics in bulk and low-dimensional semiconductors

    NASA Astrophysics Data System (ADS)

    Srivastava, G. P.

    2007-02-01

    We present theoretical investigations of the intrinsic dynamics of long-wavelength non-equilibrium optical phonons in bulk and low-dimensional semiconductors. The theory is based on the application of Fermi's golden rule formula, with phonon dispersion relations as well as crystal anharmonicity considered in the framework of isotropic continuum model. Contributions to the decay rates of the phonon modes are discussed in terms of four possible channels: Klemens channel (into two acoustic daughter modes), generalised Ridley channel (into one acoustic and one optical mode), generalised Vallee-Bogani channel (into a lower mode of the same branch and an acoustic mode), and Barman-Srivastava channel (into two lower-branch optical modes). The role of crystal structure and cation/anion mass ratio in determining the lifetime of such modes in bulk semiconductors is highlighted. Estimates of lifetimes of such modes in silicon nanowires and carbon nanotubes will also be presented. The results support and explain available experimental data, and make predictions in some cases.

  14. Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.

    PubMed

    Wang, Peng; Xiong, Jintian; Zhang, Tingting; Chen, Dalei; Xiang, Peng; Zheng, Jilin; Zhang, Yunshan; Li, Ruoming; Huang, Long; Pu, Tao; Chen, Xiangfei

    2015-08-10

    A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset.

  15. Spontaneous dc Current Generation in a Resistively Shunted Semiconductor Superlattice Driven by a Terahertz Field

    SciTech Connect

    Alekseev, K.N.; Cannon, E.H.; McKinney, J.C.; Campbell, D.K.; Alekseev, K.N.; Kusmartsev, F.V.; Alekseev, K.N.; Kusmartsev, F.V.

    1998-03-01

    We study a resistively shunted semiconductor superlattice subject to a high-frequency electric field. Using a balance equation approach that incorporates the influence of the electric circuit, we determine numerically a range of amplitude and frequency of the ac field for which a dc bias and current are generated {ital spontaneously} and show that this region is likely accessible to current experiments. Our simulations reveal that the Bloch frequency corresponding to the spontaneous dc bias is approximately an integer multiple of the ac field frequency. {copyright} {ital 1998} {ital The American Physical Society}

  16. Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction.

    PubMed

    Winget, Paul; Schirra, Laura K; Cornil, David; Li, Hong; Coropceanu, Veaceslav; Ndione, Paul F; Sigdel, Ajaya K; Ginley, David S; Berry, Joseph J; Shim, Jaewon; Kim, Hyungchui; Kippelen, Bernard; Brédas, Jean-Luc; Monti, Oliver L A

    2014-07-16

    The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

  17. ZnCdSe/ZnSe quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Al-Mossawi, Muwaffaq Abdullah

    2017-02-01

    Gain of CdZnSe quantum dot (QD) semiconductor optical amplifiers (SOAs) is studied theoretically using non-Markovian gain model including many-body effects. The calculations are done at three mole fractions. Spontaneous emission and noise figure of the amplifier are studied. The effect of shot noise is included. High gain, polarization independence, and low noise figure are characterize these QD-SOAs. A multi-mode gain appears for Zn0.69Cd0.31Se structure while the structure Zn0.6Cd0.4Se give a low noise.

  18. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    SciTech Connect

    Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  19. Excitability in optically injected semiconductor lasers: Contrasting quantum- well- and quantum-dot-based devices

    NASA Astrophysics Data System (ADS)

    Kelleher, B.; Bonatto, C.; Huyet, G.; Hegarty, S. P.

    2011-02-01

    Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

  20. Performance optimization of a free space optical interconnect system with a metal-semiconductor-metal detector

    NASA Astrophysics Data System (ADS)

    Al-Ababneh, Nedal; Khader, Ateka

    2011-08-01

    In this paper we study the possibility and the potentiality of using metal semiconductor-metal photodetector (MSM-PD) in three-dimensional parallel free space optical interconnect (FSOI) systems. The signal-to-noise ratio (SNR) and time response are used as performance measures to optimize the geometry of MSM-PD used in FSOI systems. Both SNR and time response are evaluated, analyzed, and their dependence on feature parameters of the MSM-PD, including finger size, spacing, and number of fingers, are considered. Based on the results obtained, we show that the use of MSM-PD in FSOI improves the interconnect speed at a given acceptable SNR.

  1. Global optimization of semiconductor quantum well profile for maximal optical rectification by variational calculus

    NASA Astrophysics Data System (ADS)

    Radovanovic, Jelena; Milanovic, Vitomir; Ikonic, Zoran; Indjin, Dragan

    2002-07-01

    A procedure is proposed for finding the optimal profile of a semiconductor quantum well to obtain maximal value of the optical rectification coefficient. It relies on the variational calculus, i.e. the optimal control theory, combined with the method of simulated annealing, and should deliver a globally optimized profile, unconstrained to any particular class of functional forms. For the purpose of illustration, the procedure is applied to the optimized design of AlxGa1-xAs based quantum wells, for rectification of ℎω = 116 meV (CO2 laser) radiation. The optimal smooth profile may eventually be discretized to make the structure fabrication easier.

  2. Figures of merit for microwave photonic phase shifters based on semiconductor optical amplifiers.

    PubMed

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2012-05-07

    We theoretically and experimentally compare the performance of two fully tunable phase shifter structures based on semiconductor optical amplifiers (SOA) by means of several figures of merit common to microwave photonic systems. A single SOA stage followed by a tailored notch filter is compared with a cascaded implementation comprising three SOA-based phase shifter stages. Attention is focused on the assessment of the RF net gain, noise figure and nonlinear distortion. Recommendations on the performance optimization of this sort of approaches are detailed.

  3. Characterization of optically pumped semiconductor lasers in pulsed mode as a function of temperature

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Hyland, Patrick; Scholz, Christian; Chilla, Juan

    2017-02-01

    Self-heating of Optically Pumped Semiconductor (OPS) chip has been identified as the major limiting factor of power scaling in OPS-based lasers in continuous wave (cw) mode. In this work, characterization of OPS lasers in short pulse (100 ns) and low duty cycle (1%) regime, where self-heating is negligible, as a function of the heat sink temperature is presented. This data, combined with a rigorous thermal model, allows us to predict OPS chip performance in new cooling configurations for power scaling.

  4. Microwave photonic filter with multiple taps based on single semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Li, Xiang; Xu, Enming; Zhou, Lina; Yu, Yuan; Dong, Jianji; Zhang, Xinliang

    2010-08-01

    A novel technique to implement a microwave photonic filter structure with multiple taps and arbitrary frequency response is presented. The proposed filter is based on Four-Wave Mixing (FWM) and Cross-Gain Modulation (XGM) in a semiconductor optical amplifier (SOA). Two-tap notch filter and three-tap bandpass filter with arbitrary bipolar tap generation, high rejection ratio, and widely tunability are successfully demonstrated in the experiment. Extensions to this concept by adding new probe light to provide more taps and improve the bandwidth to high frequency regime are also discussed.

  5. Measurements of the nonradiative states of optically illuminated semiconductors by a superconducting tunnel junction

    SciTech Connect

    Iguchi, I.; Kasai, Y.

    1986-08-18

    A novel technique which utilizes a superconducting tunnel junction as a phonon detector is introduced to detect nonequilibrium phonons from the nonradiative states in optically illuminated semiconductors such as Si or GaAs. The method proved to have very high sensitivity for phonon detection with a large S-italic/N-italic ratio. The detected phonon signal as a function of wavelength of the light for GaAs exhibited modulated structures below the band-gap energy consistent with the presence of an EL2 level.

  6. Second-order nonlinear optical susceptibilities of AIIBVI and AIIIBV semiconductors

    NASA Astrophysics Data System (ADS)

    Kumar, V.; Sinha, Anita; Singh, B. P.; Chandra, S.

    2016-10-01

    The second-order nonlinear optical (NLO) susceptibilities χ123(2) of AIIBVI and AIIIBV groups of semiconductors with zincblende (ZB) structure have been studied. Two relations have been proposed for the calculation of χ123(2) (0) at zero frequency. One is based on bond charge model of Levine and the other is based on plasma oscillations theory of solids. Calculated values of χ123(2) (0) for all compounds are in fair agreement with the available experimental and reported values.

  7. Tunable semiconductor laser with an acousto-optic filter in an external fibre cavity

    SciTech Connect

    Andreeva, E V; Mamedov, D S; Ruenkov, A A; Shramenko, M V; Magdich, L N; Yakubovich, S D

    2006-04-30

    A tunable semiconductor laser with a laser amplifier based on a double-pass superluminescent diode as an active element and an acousto-optic filter in an external fibre cavity as a selective element is investigated. A continuous spectral tuning is achieved in a band of width 60 nm centered at a wavelength of 845 nm and the 'instant' linewidth below 0.05 nm is obtained. The sweep frequency within the tuning range achieves 200 Hz. The cw power at the output of a single-mode fibre was automatically maintained constant at the level up to 1.5 mW. (lasers and amplifiers)

  8. Reduction of semiconductor laser diode phase and amplitude noise in interferometric fiber optic sensors.

    PubMed

    Newson, T P; Farahi, F; Jones, J D; Jackson, D A

    1989-10-01

    An optical configuration employing two conventional Michelson interferometers and a fiber Fabry-Perot interferometer connected in parallel is used to demonstrate the principle of common mode rejection of both the amplitude and frequency noise of a semiconductor laser. Common mode noise rejection is maximized when the outputs of the two interferometers with matched path imbalance, fringe visibility and amplitude are differentially combined. One interferometer is used as a reference, and the other as a sensing interferometer. The fiber Fabry-Perot interferometer is used as the sensing interferometer and is demonstrated as a miniature acoustic sensing element.

  9. Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers

    SciTech Connect

    Mezzapesa, F. P. Brambilla, M.; Dabbicco, M.; Scamarcio, G.; Columbo, L. L.; Vitiello, M. S.

    2014-01-27

    To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (≅40 mW/cm{sup 2}) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.

  10. All-optical depletion of dark excitons from a semiconductor quantum dot

    SciTech Connect

    Schmidgall, E. R.; Schwartz, I.; Cogan, D.; Gershoni, D.; Gantz, L.; Heindel, T.; Reitzenstein, S.

    2015-05-11

    Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.

  11. Excitability in optically injected semiconductor lasers: contrasting quantum-well- and quantum-dot-based devices.

    PubMed

    Kelleher, B; Bonatto, C; Huyet, G; Hegarty, S P

    2011-02-01

    Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

  12. High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

    PubMed

    Di Pietro, Riccardo; Sirringhaus, Henning

    2012-07-03

    We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Proposal for the momentum-resolved and time-resolved optical measurement of the current distribution in semiconductors.

    PubMed

    Liu, Jiang-Tao; Su, Fu-Hai; Deng, Xin-Hua; Wang, Hai

    2012-05-21

    The two-color optical coherence absorption spectrum (QUIC-AB) of semiconductors in the presence of a charge current is investigated. We find that the QUIC-AB depends strongly not only on the amplitude of the electron current but also on the direction of the electron current. Thus, the amplitude and the angular distribution of current in semiconductors can be detected directly in real time with the QUIC-AB.

  14. Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

    NASA Astrophysics Data System (ADS)

    Misiewicz, J.; Kudrawiec, R.

    2012-06-01

    The authors present the application of contactless electroreflectance (CER) spectroscopy to study optical transitions in low dimensional semiconductor structures including quantum wells (QWs), step-like QWs, quantum dots (QDs), quantum dashes (QDashes), QDs and QDashes embedded in a QW, and QDashes coupled with a QW. For QWs optical transitions between the ground and excited states as well as optical transitions in QW barriers and step-like barriers have been clearly observed in CER spectra. Energies of these transitions have been compared with theoretical calculations and in this way the band structure has been determined for the investigated QWs. For QD and QDash structures optical transitions in QDs and QDashes as well as optical transitions in the wetting layer have been identified. For QDs and QDashes surrounded by a QW, in addition to energies of QD and QDash transitions, energies of optical transitions in the surrounded QW have been measured and the band structure has been determined for the surrounded QW. Finally some differences, which can be observed in CER and photo-reflectance spectra, have been presented and discussed for selected QW and QD structures.

  15. Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition.

    PubMed

    Ryckman, Judson D; Hallman, Kent A; Marvel, Robert E; Haglund, Richard F; Weiss, Sharon M

    2013-05-06

    Vanadium dioxide (VO(2)) is a promising reconfigurable optical material and has long been a focus of condensed matter research owing to its distinctive semiconductor-to-metal phase transition (SMT), a feature that has stimulated recent development of thermally reconfigurable photonic, plasmonic, and metamaterial structures. Here, we integrate VO(2) onto silicon photonic devices and demonstrate all-optical switching and reconfiguration of ultra-compact broadband Si-VO(2) absorption modulators (L < 1 μm) and ring-resonators (R ~ λ(0)). Optically inducing the SMT in a small, ~0.275 μm(2), active area of polycrystalline VO(2) enables Si-VO(2) structures to achieve record values of absorption modulation, ~4 dB μm(-1), and intracavity phase modulation, ~π/5 rad μm(-1). This in turn yields large, tunable changes to resonant wavelength, |Δλ(SMT)| ~ 3 nm, approximately 60 times larger than Si-only control devices, and enables reconfigurable filtering and optical modulation in excess of 7 dB from modest Q-factor (~10(3)), high-bandwidth ring resonators (>100 GHz). All-optical integrated Si-VO(2) devices thus constitute platforms for reconfigurable photonics, bringing new opportunities to realize dynamic on-chip networks and ultrafast optical shutters and modulators.

  16. Electrically driven magnetization of diluted magnetic semiconductors actuated by the Overhauser effect.

    PubMed

    Siddiqui, L; Zainuddin, A N M; Datta, S

    2010-06-02

    It is well known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductors (DMS) like Ga(1-x)Mn(x)As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that even with a constant hole density, large changes in the magnetization can be obtained with a relatively small imbalance in the quasi-Fermi levels for up-spin and down-spin electrons. We show, by coupling the mean field theory of diluted magnetic semiconductor ferromagnetism with master equations governing the Mn spin-dynamics, that a mere splitting of the up-spin and down-spin quasi-Fermi levels by 0.1 meV will produce the effect of an external magnetic field as large as 1 T as long as the alternative relaxation paths for Mn spins (i.e. spin-lattice relaxation) can be neglected. The physics is similar to the classic Overhauser effect, also called the dynamic nuclear polarization, with the Mn impurities playing the role of the nucleus. We propose that a lateral spin-valve structure in an anti-parallel configuration with a DMS as the channel can be used to demonstrate this effect, as quasi-Fermi level splitting of such magnitude, inside the channel of similar systems, has already been experimentally demonstrated to produce polarization of paramagnetic impurity spins.

  17. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    SciTech Connect

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

  18. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    DOE PAGES

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; ...

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less

  19. Towards highly efficient photoanodes: boosting sunlight-driven semiconductor nanomaterials for water oxidation.

    PubMed

    Gan, Jiayong; Lu, Xihong; Tong, Yexiang

    2014-07-07

    Harvesting energy directly from sunlight is a very attractive and desirable way to solve the rising energy demand. In the past few decades, considerable efforts have been focused on identifying appropriate materials and devices that can utilize solar energy to produce chemical fuels. Among these, one of the most promising options is the construction of a photoelectrochemical (PEC) cell that can produce hydrogen fuel or oxygen from water. Significant advancement in the understanding and construction of efficient photoanodes to improve performance has been accomplished within a short period of time owing to various newly developed ideas and approaches, including facilitating charge transportation in narrow band gap semiconductors or doping in wide band gap semiconductors for enhancing visible-light absorption; electrocatalysts for decreasing overpotentials; controlling the morphology of the materials for enhancing light absorption and shortening the transfer distance of minority carriers; and other methods such as using heterojunction structures for band-structure engineering, sensitization, and passivating layers. In this review, we focus on the recent developments of some promising visible-light active photoanode materials with high PEC performance, such as BiVO4, α-Fe2O3, WO3, TaON, and Ta3N5.

  20. Dye-sensitised semiconductors modified with molecular catalysts for light-driven H2 production.

    PubMed

    Willkomm, Janina; Orchard, Katherine L; Reynal, Anna; Pastor, Ernest; Durrant, James R; Reisner, Erwin

    2016-01-07

    The development of synthetic systems for the conversion of solar energy into chemical fuels is a research goal that continues to attract growing interest owing to its potential to provide renewable and storable energy in the form of a 'solar fuel'. Dye-sensitised photocatalysis (DSP) with molecular catalysts is a relatively new approach to convert sunlight into a fuel such as H2 and is based on the self-assembly of a molecular dye and electrocatalyst on a semiconductor nanoparticle. DSP systems combine advantages of both homogenous and heterogeneous photocatalysis, with the molecular components providing an excellent platform for tuning activity and understanding performance at defined catalytic sites, whereas the semiconductor bridge ensures favourable multi-electron transfer kinetics between the dye and the fuel-forming electrocatalyst. In this tutorial review, strategies and challenges for the assembly of functional molecular DSP systems and experimental techniques for their evaluation are explained. Current understanding of the factors governing electron transfer across inorganic-molecular interfaces is described and future directions and challenges for this field are outlined.

  1. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit.

    PubMed

    Kim, Dohun; Ward, D R; Simmons, C B; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, M A

    2015-03-01

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. This qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the 'sweet spot'. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

  2. Asynchronous, self-controlled, all-optical label and payload separator using nonlinear polarization rotation in a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Vegas Olmos, J. J.; Tafur Monroy, I.; Liu, Y.; Garcia Larrode, M.; Turkiewicz, J.; Dorren, H. J. S.; Koonen, A. M. J.

    2004-09-01

    We demonstrate an all-optical label and payload separator based on nonlinear polarization rotation in a semiconductor optical amplifier (SOA). The proposed scheme uses a packet format composed of a label and payload information signal combined with a control signal by using polarization division multiplexing. The control signal is employed to separate the label from the payload signal by exploiting nonlinear polarization rotation in a SOA. Experimental results show a label from payload suppression factor of 22 dB. This scheme operates asynchronously and does not need external control signal. Clean and wide open eye diagrams are obtained for both the payload and the label signal operating at bit-rates of 10 Gbit/s and 625 Mbit/s, respectively.

  3. Asynchronous, self-controlled, all-optical label and payload separator using nonlinear polarization rotation in a semiconductor optical amplifier.

    PubMed

    Vegas Olmos, J; Monroy, I; Liu, Y; Garcia Larrode, M; Turkiewicz, J; Dorren, H; Koonen, A

    2004-09-06

    We demonstrate an all-optical label and payload separator based on nonlinear polarization rotation in a semiconductor optical amplifier (SOA). The proposed scheme uses a packet format composed of a label and payload information signal combined with a control signal by using polarization division multiplexing. The control signal is employed to separate the label from the payload signal by exploiting nonlinear polarization rotation in a SOA. Experimental results show a label from payload suppression factor of 22 dB. This scheme operates asynchronously and does not need external control signal. Clean and wide open eye diagrams are obtained for both the payload and the label signal operating at bit-rates of 10 Gbit/s and 625 Mbit/s, respectively.

  4. New time-space-time optical packet switching node based on nonlinear polarization rotation of a semiconductor optical amplifier.

    PubMed

    Yongjun, Wang; Qinghua, Tian; Zhi, Wang; Xiaoqing, Zhu; Chen, Wu; Chao, Shang; Xin, Xiangjun

    2016-03-10

    In this paper, we establish a simple model to analyze the semiconductor optical amplifier's (SOA) nonlinear polarization rotation (NPR) and acquire the variable curves of phase difference between TE and TM modes with bias current, pump power, probe power, and linewidth enhancement factor (LEF). The results indicate that the optical switch based on the SOA's NPR can be realized by changing the pump's optical power and the main operating parameters, such as bias current and hold beam power, and then the pump power can be determined. On this basis, a time-space-time (T-S-T) optical packet switching node is proposed, in which the SOA's NPR switch is the basic element. Then, the T-S and S-T experimental systems are set up, and the experimental results demonstrate that the proposed switch scheme can implement the optical switching function in accordance with the routing requirement. The signal-to-noise ratio (SNR) exceeds 20 dB, and the extinction ratio (ER) is more than 10 dB after being delayed and switched in the node.

  5. Peculiarities of two-photon optical nutation of biexcitons in semiconductors taking into account elastic interparticle interactions

    SciTech Connect

    Khadzhi, P I; Vasiliev, V V

    2010-12-09

    The peculiarities of two-photon nutation in a system of coherent biexcitons in CuCl semiconductors are considered taking into account the elastic biexciton - biexciton interaction. It is shown that depending on the system parameters, optical nutation represents a process of periodic transformation of photon pairs into biexcitons and vice versa. The possibility of exercising the phase control of the optical nutation process is predicted. (nonlinear optical phenomena)

  6. High-order sideband generation in a semiconductor quantum well driven by two orthogonal terahertz fields

    NASA Astrophysics Data System (ADS)

    Yan, Jie-Yun

    2017-08-01

    The theory of excitonic high-order sideband generation (HSG) in a semiconductor quantum well irradiated by two orthogonal terahertz (THz) fields (one frequency is an integral multiple of the other) is presented. The exact analytical solution to the sideband spectrum is given with the help of the generalized Bessel functions. As a special case, the HSG when the frequencies of these two THz fields are the same is derived and its dependence on the ellipticity of the THz field is discussed. The theory could explain the experiments, especially concerning the sensitive dependence of HSG signals on the ellipticity of the THz field: the signals are strong when the THz field has a linear polarization and totally vanish in case of a circular polarization. More interestingly, it was found that the strongest signal is not produced in the case of linear polarization for some sidebands. The theory is supported by numerical calculations.

  7. Bound states in optical absorption of semiconductor quantum wells containing a two-dimensional electron Gas

    PubMed

    Huard; Cox; Saminadayar; Arnoult; Tatarenko

    2000-01-03

    The dependence of the optical absorption spectrum of a semiconductor quantum well on two-dimensional electron concentration n(e) is studied using CdTe samples. The trion peak (X-) seen at low n(e) evolves smoothly into the Fermi edge singularity at high n(e). The exciton peak (X) moves off to high energy, weakens, and disappears. The X,X- splitting is linear in n(e) and closely equal to the Fermi energy plus the trion binding energy. For Cd0.998Mn0.002Te quantum wells in a magnetic field, the X,X- splitting reflects unequal Fermi energies for M = +/-1/2 electrons. The data are explained by Hawrylak's theory of the many-body optical response including spin effects.

  8. Leveraging Nanocavity Harmonics for Control of Optical Processes in 2D Semiconductors.

    PubMed

    Akselrod, Gleb M; Ming, Tian; Argyropoulos, Christos; Hoang, Thang B; Lin, Yuxuan; Ling, Xi; Smith, David R; Kong, Jing; Mikkelsen, Maiken H

    2015-05-13

    Optical cavities with multiple tunable resonances have the potential to provide unique electromagnetic environments at two or more distinct wavelengths--critical for control of optical processes such as nonlinear generation, entangled photon generation, or photoluminescence (PL) enhancement. Here, we show a plasmonic nanocavity based on a nanopatch antenna design that has two tunable resonant modes in the visible spectrum separated by 350 nm and with line widths of ∼60 nm. The importance of utilizing two resonances simultaneously is demonstrated by integrating monolayer MoS2, a two-dimensional semiconductor, into the colloidally synthesized nanocavities. We observe a 2000-fold enhancement in the PL intensity of MoS2--which has intrinsically low absorption and small quantum yield--at room temperature, enabled by the combination of tailored absorption enhancement at the first harmonic and PL quantum-yield enhancement at the fundamental resonance.

  9. Flexible optical clock recovery utilizing a multi-function semiconductor fiber laser

    NASA Astrophysics Data System (ADS)

    Feng, H.; Zhao, W.; Xie, X. P.; Qian, F. C.; Wang, W.; Huang, X.; Hu, H.

    2013-08-01

    We demonstrate a multi-function fiber laser based on cross-gain modulation in a semiconductor optical amplifier (SOA). Depending on the input signals, the fiber cavity can emit a continuous wave (CW) laser, mode-locked pulses, or act as a clock recovery device. With an extra CW light overcoming the pattern effect in the clock recovery process, a 10-GHz synchronous clock sequence with <0.1 power fluctuation and <120-fs timing jitter is extracted from the transmission return-to-zero data stream. We further analyze the recovered clock properties as a function of the input signal, and find that the clock recovery system presents good stability over a large range of input signal characteristics. The multi-function fiber laser exhibits the advantages of compact configuration and low cost, which is very convenient and attractive for optical communications and signal processing.

  10. Effective optical Faraday rotations of semiconductor EuS nanocrystals with paramagnetic transition-metal ions.

    PubMed

    Hasegawa, Yasuchika; Maeda, Masashi; Nakanishi, Takayuki; Doi, Yoshihiro; Hinatsu, Yukio; Fujita, Koji; Tanaka, Katsuhisa; Koizumi, Hitoshi; Fushimi, Koji

    2013-02-20

    Novel EuS nanocrystals containing paramagnetic Mn(II), Co(II), or Fe(II) ions have been reported as advanced semiconductor materials with effective optical rotation under a magnetic field, Faraday rotation. EuS nanocrystals with transition-metal ions, EuS:M nanocrystals, were prepared by the reduction of the Eu(III) dithiocarbamate complex tetraphenylphosphonium tetrakis(diethyldithiocarbamate)europium(III) with transition-metal complexes at 300 °C. The EuS:M nanocrystals thus prepared were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), inductively coupled plasma atomic emission spectroanalysis (ICP-AES), and a superconducting quantum interference device (SQUID) magnetometer. Enhanced Faraday rotations of the EuS:M nanocrystals were observed around 550 nm, and their enhanced spin polarization was estimated using electron paramagnetic resonance (EPR) measurements. In this report, the magneto-optical relationship between the Faraday rotation efficiency and spin polarization is discussed.

  11. Fiber Bragg grating dynamic strain sensor using an adaptive reflective semiconductor optical amplifier source.

    PubMed

    Wei, Heming; Tao, Chuanyi; Zhu, Yinian; Krishnaswamy, Sridhar

    2016-04-01

    In this paper, a reflective semiconductor optical amplifier (RSOA) is configured to demodulate dynamic spectral shifts of a fiber Bragg grating (FBG) dynamic strain sensor. The FBG sensor and the RSOA source form an adaptive fiber cavity laser. As the reflective spectrum of the FBG sensor changes due to dynamic strains, the wavelength of the laser output shifts accordingly, which is subsequently converted into a corresponding phase shift and demodulated by an unbalanced Michelson interferometer. Due to the short transition time of the RSOA, the RSOA-FBG cavity can respond to dynamic strains at high frequencies extending to megahertz. A demodulator using a PID controller is used to compensate for low-frequency drifts induced by temperature and large quasi-static strains. As the sensitivity of the demodulator is a function of the optical path difference and the FBG spectral width, optimal parameters to obtain high sensitivity are presented. Multiplexing to demodulate multiple FBG sensors is also discussed.

  12. Optics education for machine operators in the semiconductor industry: moving beyond button pushing

    NASA Astrophysics Data System (ADS)

    Karakekes, Meg; Currier, Deborah

    1995-10-01

    In the competitive semiconductor manufacturing industry, employees who operate equipment are able to make greater contributions if they understand how the equipment works. By understanding the 'why' behind the 'what', the equipment operators can better partner with other technical staff to produce quality integrated circuits efficiently and effectively. This additional knowledge also opens equipment operators to job enrichment and enlargement opportunities. Advanced Micro Devices (AMD) is in the process of upgrading the skills of its equipment operators. This paper is an overview of a pilot program that employs optics education to upgrade stepper operators' skills. The paper starts with stepper tasks that require optics knowledge, examines teaching methods, reports both end-of-course and three months post-training knowledge retention, and summarizes how the training has impacted the production floor.

  13. High-order optical nonlinearities in nanocomposite films dispersed with semiconductor quantum dots at high concentrations

    NASA Astrophysics Data System (ADS)

    Tomita, Yasuo; Matsushima, Shun-suke; Yamagami, Ryu-ichi; Jinzenji, Taka-aki; Sakuma, Shohei; Liu, Xiangming; Izuishi, Takuya; Shen, Qing

    2017-06-01

    We describe the nonlinear optical properties of inorganic-organic nanocomposite films in which semiconductor CdSe quantum dots as high as 6.8 vol.% are dispersed. Open/closed Z-scan measurements, degenerate multi-wave mixing and femtosecond pump-probe/transient grating measurements are conducted. It is shown that the observed fifth-order optical nonlinearity has the cascaded third-order contribution that becomes prominent at high concentrations of CdSe QDs. It is also shown that there are picosecond-scale intensity-dependent and nanosecond-scale intensity-independent decay components in absorptive and refractive nonlinearities. The former is caused by the Auger process, while the latter comes from the electron-hole recombination process.

  14. Analysis of microwave frequency combs generated by semiconductor lasers under hybrid optical injections

    NASA Astrophysics Data System (ADS)

    Lin, Cheng-Ting; Wu, Yi-Hua; Juan, Yu-Shan

    2015-03-01

    Microwave frequency combs utilizing hybrid optical injections schemes by varying the operational parameters, injection strength, repetition frequency, and detuning frequency are demonstrated and characterized. The dynamical hybrid optical injections are realized by both optical pulse injection and optical cw injection to the slave laser simultaneously under the condition of zero detuning frequency between two injecting source lasers. For pure pulse injection case, the amplitude variation of ±27.3 dB in a 30 GHz range is obtained. By further applying the injection strength of the cw injection to the pulses injected semiconductor laser, the amplitude variation of ±3.3 dB in a 30 GHz range in microwave frequency combs are observed when operating the cw injection system in a stable locking state. In order to examine the microwave frequency comb precisely, each operational parameters of the hybrid optical injections schemes are analyzed. The amplitude variation of microwave frequency combs is also strongly influenced by operating the cw injection system in different states. Comparing to the cw injection system operated in period-one states, the amplitude variation is reduced when operated in the stable locking states. Moreover, the bandwidth broadening in microwave frequency comb is expected when the cw injection system operating in a stable locking state. In this paper, strongly improve the amplitude variation of the microwave frequency combs generated utilizing hybrid injections scheme compared to single injection case are obtained and compared.

  15. Influences of semiconductor laser on fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer

    NASA Astrophysics Data System (ADS)

    Liang, Sheng; Zhang, Chun-Xi; Lin, Bo; Lin, Wen-Tai; Li, Qin; Zhong, Xiang; Li, Li-Jing

    2010-12-01

    This paper investigates the influences of a semiconductor laser with narrow linewidth on a fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer. It establishes an effective numerical model to describe the noises and linewidth of a semiconductor laser, taking into account their correlations. Simulation shows that frequency noise has great influences on location errors and their relationship is numerically investigated. Accordingly, there is need to determine the linewidth of the laser less than a threshold and obtain the least location errors. Furthermore, experiments are performed by a sensor prototype using three semiconductor lasers with different linewidths, respectively, with polarization maintaining optical fibres and couplers to eliminate the polarization induced noises and fading. The agreement of simulation with experimental results means that the proposed numerical model can make a comprehensive description of the noise behaviour of a semiconductor laser. The conclusion is useful for choosing a laser source for fibre-optic distributed disturbance sensor to achieve optimized location accuracy. What is more, the proposed numerical model can be widely used for analysing influences of semiconductor lasers on other sensing, communication and optical signal processing systems.

  16. A silicon-nanowire memory driven by optical gradient force induced bistability

    SciTech Connect

    Dong, B.; Cai, H. Gu, Y. D.; Kwong, D. L.; Chin, L. K.; Ng, G. I.; Ser, W.; Huang, J. G.; Yang, Z. C.; Liu, A. Q.

    2015-12-28

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

  17. Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Khmelinskii, Igor; Makarov, Vladimir I.

    2016-04-01

    We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.

  18. Role of dielectric function in model GW calculations of structural and optical properties in semiconductors

    NASA Astrophysics Data System (ADS)

    Asahi, Ryoji; Freeman, A. J.

    1998-03-01

    Recently proposed nonlocal exchange potential methods such as screened exchange (sX-LDA)(Bylander, Kleinman, Phys. Rev. B 41, 7868 (1990)) and model GW(Gygi, Baldereschi, Phys. Rev. Lett. 62, 2160 (1989)) demonstrated successful extensions of LDA energy bands to treat excited states in semiconductors and insulators. While using different static dielectric functions - a Thomas-Fermi or a Hubbard screening function for the sX-LDA and a step function or an RPA for the model GW - those methods gave surprising agreement of the energy gaps with each other and with experiments. We have investigated semiconductor systems such as Si, Ge, and InSb using the full-potential linearized augmented plane wave (FLAPW) method(Wimmer, Krakauer, Weinert, Freeman, Phys. Rev. B 24, 864 (1981)) within the model GW method including the above dielectric functions. Our focus is on understanding the different results obtained for the structural properties (lattice constants and bulk moduli) and optical properties (band gaps and optical spectra). We find that the results can be interpreted by different long-range screening behavior corresponding to the different static dielectric functions employed in the model GW calculations.

  19. Optical properties of thin semiconductor device structures with reflective back-surface layers

    SciTech Connect

    Clevenger, M.B.; Murray, C.S.; Ringel, S.A.; Sachs, R.N.; Qin, L.; Charache, G.W.; Depoy, D.M.

    1998-11-01

    Ultrathin semiconductor device structures incorporating reflective internal or back surface layers have been investigated recently as a means of improving photon recuperation, eliminating losses associated with free carrier absorption in conductive substrates and increasing the above bandgap optical thickness of thermophotovoltaic device structures. However, optical losses in the form of resonance absorptions in these ultrathin devices have been observed. This behavior in cells incorporating epitaxially grown FeAl layers and in devices that lack a substrate but have a back-surface reflector (BSR) at the rear of the active layers has been studied experimentally and modeled effectively. For thermophotovoltaic devices, these resonances represent a significant loss mechanism since the wavelengths at which they occur are defined by the active TPV cell thickness of {approximately} 2--5 microns and are in a spectral range of significant energy content for thermal radiators. This study demonstrates that ultrathin semiconductor structures that are clad by such highly reflective layers or by films with largely different indices of refraction display resonance absorptions that can only be overcome through the implementation of some external spectral control strategy. Effective broadband, below-bandgap spectral control using a back-surface reflector is only achievable using a large separation between the TPV active layers and the back-surface reflector.

  20. Ultrafast optical studies of surface reaction processes at semiconductor interfaces. Progress report

    SciTech Connect

    Miller, R.J.D.

    1994-10-01

    The DOE funded research has focused on the development of novel non-linear optical methods for the in situ study of surface reaction dynamics. In particular, the work has concentrated on interfacial charge transfer processes as this is the simplest of all surface reactions, i.e., no bonds are broken and the reaction is derived from nuclear repolarization. Interfacial charge transfer forms the basis for a number of important solar energy conversion strategies. In these studies, semiconductor liquid junctions provide a convenient system in which the interfacial charge transfer can be optically initiated. The all-optical approach necessitates that the dynamics of the charge transfer event itself be put in the proper context of the operating photophysical processes at the surface. There are at least four dynamical processes that are coupled in determining the overall rate of electron flux across the interface. In the limit that interfacial charge transfer approaches strong coupling, the time scale for transport of even field accelerated carriers within the space charge region becomes comparable to the charge transfer dynamics. The transport component needs to be convolved to probes of the carrier population at the surface. The other two dynamical processes, carrier thermalization and surface state trapping, determine the states which ultimately serve as the donor levels to the solution acceptor distribution. In terms of the hot carrier model, these latter two processes compete with direct unthermalized charge transfer. There is a fifth dynamical process which also needs consideration: the solvent modes that are coupled to the reaction coordinate. Ultimately, the dynamics of solvent relaxation determine the upper limit to the charge transfer process. Different optical techniques have been developed to follow all the above dynamical processes in which a real time view of charge transfer dynamics at semiconductor surfaces is emerging. These results are discussed here.

  1. Dielectric response of II-VI semiconductor core-shell ensembles: Study of the lossless optical condition

    NASA Astrophysics Data System (ADS)

    de la Cruz, R. M.; Kanyinda-Malu, C.

    2014-09-01

    We theoretically investigate optical properties of II-VI core-shell distribution mixtures made of two type-I sized-nanoshells as a plausible negative dielectric function material. The nonlocal optical response of the semiconductor QD is described by using a resonant excitonic dielectric function, while the shell response is modeled with Demangeot formula. Achieving the zero-loss at an optical frequency ω, i.e., ɛeff =ɛeff‧ + iɛeff″ with ɛeff‧ < 0 and ɛeff″ = 0, is of fundamental importance in nanophotonics. Resonant states in semiconductors provide a source for negative dielectric function provided that the dipole strength and the oscillator density are adequate to offset the background. Furthermore, the semiconductor offers the prospect of pumping, either optically or electrically, to achieve a gain mechanism that can offset the loss. We analyse optimal conditions that must be satisfied to achieve semiconductor-based negative index materials. By comparing with II-VI semiconductor quantum dots (QDs) previously reported in the literature, the inclusion of phonon and shell contributions in the ɛeff along with the finite barrier Effective Mass Approximation (EMA) approach, we found similar qualitative behaviours for the ɛeff. The lossless optical condition along with ɛeff‧ < 0 is discussed in terms of sizes, volume fractions and embedding medium of the mixtures' distributions. Furthermore, we estimated optical power to maintain nanocrystals density in excited states and this value is less than that previously obtained in II-VI semiconductor QDs.

  2. TOPICAL REVIEW A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Ramsay, A. J.

    2010-10-01

    The spin of a carrier trapped in a self-assembled quantum dot has the potential to be a robust optically active qubit that is compatible with existing III-V semiconductor device technology. A key requirement for building a quantum processor is the ability to dynamically prepare, control and detect single quantum states. Here, experimental progress in the coherent optical control of single semiconductor quantum dots over the past decade is reviewed, alongside an introductory discussion of the basic principles of coherent control.

  3. A micromachined thermo-optical light modulator based on semiconductor-to-metal phase transition

    NASA Astrophysics Data System (ADS)

    Jiang, Lijun

    In this research, a micromachined thermo-optical light modulator was realized based on the semiconductor-to-metal phase transition of vanadium dioxide (VO2) thin film. VO2 undergoes a reversible phase transition at approximately 68°C, which is accompanied with drastic changes in its electrical and optical properties. The sharp electrical resistivity change can be as great as five orders. Optically, VO2 film will switch from a transparent semiconductor phase to a reflective metal phase upon the phase transition. The light modulator in this research exploits this phase transition related optical switching by using surface micromachined low-thermal-mass pixels to achieve good thermal isolations, which ensures that each pixel can be individually switched without cross talking. In operation, the pixel temperature was controlled by integrated resistor on each pixel or spatially addressed thermal radiation sources. Active VO2 thin film was synthesized by thermal oxidation of e-beam evaporated vanadium metal film. The oxidized film exhibits a phase transition at ˜65°C with a hysteresis of about 15°C. A transmittance switching from ˜90% to ˜30% in the near infrared and a reflectance switching from ˜50% to ˜15% in the visible have been achieved. The surface microstructure was studied and correlated to its optical properties. A study on the hysteresis loop reveals that the VO2 can be repetitively switched between the "on" and "off" states. The micromachined thermal isolation pixel was a bridge-like silicon dioxide platform suspended with narrow supporting legs. The pixel design was optimized with both thermal and optical simulations. The VO2 light modulator was fabricated by surface micromachining based on dry processing. Silicon dioxide was deposited on a polyimide sacrificial layer by PECVD and patterned to form the structural pixel. Vanadium film was e-beam evaporated and patterned with lift-off process. It was thermally oxidized into VO2 at 390°C. The thermal

  4. Optical implementation of neural learning algorithms based on cross-gain modulation in a semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Wang, Zhi; Le, Yansi; Sun, Chonghui; Song, Xiaojia; Wu, Chongqing

    2016-10-01

    Neuromorphic engineering has a wide range of applications in the fields of machine learning, pattern recognition, adaptive control, etc. Photonics, characterized by its high speed, wide bandwidth, low power consumption and massive parallelism, is an ideal way to realize ultrafast spiking neural networks (SNNs). Synaptic plasticity is believed to be critical for learning, memory and development in neural circuits. Experimental results have shown that changes of synapse are highly dependent on the relative timing of pre- and postsynaptic spikes. Synaptic plasticity in which presynaptic spikes preceding postsynaptic spikes results in strengthening, while the opposite timing results in weakening is called antisymmetric spike-timing-dependent plasticity (STDP) learning rule. And synaptic plasticity has the opposite effect under the same conditions is called antisymmetric anti-STDP learning rule. We proposed and experimentally demonstrated an optical implementation of neural learning algorithms, which can achieve both of antisymmetric STDP and anti-STDP learning rule, based on the cross-gain modulation (XGM) within a single semiconductor optical amplifier (SOA). The weight and height of the potentitation and depression window can be controlled by adjusting the injection current of the SOA, to mimic the biological antisymmetric STDP and anti-STDP learning rule more realistically. As the injection current increases, the width of depression and potentitation window decreases and height increases, due to the decreasing of recovery time and increasing of gain under a stronger injection current. Based on the demonstrated optical STDP circuit, ultrafast learning in optical SNNs can be realized.

  5. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    PubMed Central

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  6. Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

    PubMed

    Kim, Jimyung; Delfyett, Peter J

    2008-07-21

    We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

  7. Lossless microwave photonic delay line using a ring resonator with an integrated semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Xie, Yiwei; Zhuang, Leimeng; Boller, Klaus-Jochen; Lowery, Arthur James

    2017-06-01

    Optical delay lines implemented in photonic integrated circuits (PICs) are essential for creating robust and low-cost optical signal processors on miniaturized chips. In particular, tunable delay lines enable a key feature of programmability for the on-chip processing functions. However, the previously investigated tunable delay lines are plagued by a severe drawback of delay-dependent loss due to the propagation loss in the constituent waveguides. In principle, a serial-connected amplifier can be used to compensate such losses or perform additional amplitude manipulation. However, this solution is generally unpractical as it introduces additional burden on chip area and power consumption, particularly for large-scale integrated PICs. Here, we report an integrated tunable delay line that overcomes the delay-dependent loss, and simultaneously allows for independent manipulation of group delay and amplitude responses. It uses a ring resonator with a tunable coupler and a semiconductor optical amplifier in the feedback path. A proof-of-concept device with a free spectral range of 11.5 GHz and a delay bandwidth in the order of 200 MHz is discussed in the context of microwave photonics and is experimentally demonstrated to be able to provide a lossless delay up to 1.1 to a 5 ns Gaussian pulse. The proposed device can be designed for different frequency scales with potential for applications across many other areas such as telecommunications, LIDAR, and spectroscopy, serving as a novel building block for creating chip-scale programmable optical signal processors.

  8. Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot

    NASA Astrophysics Data System (ADS)

    Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo

    2016-10-01

    Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.

  9. Dual-pump wave mixing in semiconductor optical amplifiers: performance enhancement with long amplifiers

    NASA Astrophysics Data System (ADS)

    Tomkos, Ioannis; Zacharopoulos, Ioannis; Syvridis, Dimitrios

    1999-05-01

    We demonstrate experimentally the improvement of the performance of the dual pump wave mixing scheme in semiconductor optical amplifiers, using long amplifier chips and high optical pump powers. The optical amplifiers used in the experiment had a ridge waveguide structure with bulk active layer and antireflective-coated angled facets. Measurements of the conversion efficiency and SBR as a function of wavelength shift are presented for a wavelength shift of more than 40 nm. The above measurements are carried out for three amplifier lengths (500 micrometers , 1000 micrometers , and 1500 micrometers ) and for different levels of the optical power of the two pumps. It will be shown that an increase in the amplifier length from 500 micrometers to 1500 micrometers results to an increase of more than 25 dB for the efficiency and more than 20 dB for the SBR. This improvement combined with the inherent advantages of the dual pump scheme (almost constant SBR and high efficiency for large wavelength shifts) results in a highly performing wavelength converter/phase conjugator, suitable for many applications.

  10. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

    SciTech Connect

    Petrunov, A. N.; Podoskin, A. A.; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A. Nalet, T. A.; Fetisova, N. V.; Vavilova, L. S.; Lyutetskiy, A. V.; Alekseev, P. A.; Titkov, A. N.; Tarasov, I. S.

    2010-06-15

    Asymmetric heterostructures with an ultrathick waveguide based on an AlGaAs/GaAs alloy system that allow lasing at a wavelength of 905 nm have been developed and fabricated by hydride metalorganic vapor-phase epitaxy. The internal optical loss and internal quantum efficiency of semiconductor lasers based on such structures were 0.7 cm{sup -1} and 97%, respectively. It is shown that the highest output optical power of laser diodes with antireflecting (SiO{sub 2}) and reflecting (Si/SiO{sub 2}) coatings deposited on untreated Fabry-Perot cavity facets obtained by cleaving in an oxygen atmosphere reached 67 W in the pulsed mode and is limited by mirror damage. Treatment of Fabry-Perot cavity facets by etching in argon plasma and the formation of coatings with passivating and oxygen-blocking GaN and Si{sub 3}N{sub 4} layers allowed an increase in the maximum output optical power to 120 W. Mirror damage was not observed at the attained output optical power.

  11. Ellipsometric and optical study of some uncommon insulator films on 3-5 semiconductors

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Warner, J. D.; Liu, D. C.; Pouch, J. J.

    1985-01-01

    Optical properties of three types of insulating films that show promise in potential applications in the 3-4 semiconductor technology were evaluated, namely a-C:H, BN and CaF2. The plasma deposited a-C:H shows an amorphous behavior with optical energy gaps of approximately 2 to 2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement, and give a fine-tuned positive confirmation to an existing conjecture on the nature of a-C:H films (1). Ion beam deposited BN films show amorphous behavior with energy gap of 5 eV. These films are nonstoichiometric (B/N approximately 2) and have refractive index, density and/or hardness which are dependent on the deposition conditions. The epitaxially grown CaF2 on GaAs films have optical parameters equal to bulk, but evidence of damage was found in the GaAs at the interface.

  12. Temperature-driven switchable-beam Yagi-Uda antenna using VO2 semiconductor-metal phase transitions

    NASA Astrophysics Data System (ADS)

    Rahimi, Eesa; Şendur, Kürşat

    2017-06-01

    In this study we propose and analyze a temperature driven switchable-beam vertically polarized directional antenna for micro/nano scale optical communications. Temperature enabled phase transitions of a thin layer of vanadium dioxide reshape the beam of a Yagi-Uda antenna by changing the directionality of the radiation pattern and altering the emission rate. The role of each antenna element in the Yagi-Uda array's emission is demonstrated at different temperatures by comparing the amplitudes and phases of induced currents in the elements. Thus a substantial directional gain switching is shown using resonance damping manipulation of antenna elements.

  13. Optical Real Time Signal Processors and Semiconductor Surface and Semiconductor-Electrolyte Interface Study Using Acoustic Surface Wave.

    DTIC Science & Technology

    1981-08-01

    Resistivity GaAs", J. Appl. Phys., Vol. 50, pp. 4942-4950, 1979. Copies of the papers are available upon request. 2 5. J . Scott Moore and P. Das, "The...Papers presented with support from the contract 1. J . Scott Moore and P. Das, "Hot Electron Effects in Quasi-Two Dimensional Semiconductors

  14. Semiconductor Laser Complex Dynamics: From Optical Neurons to Optical Rogue Waves

    DTIC Science & Technology

    2017-02-11

    laser dynamics for innovative applications . The results of the project were published in 5 high- impact journal papers and were presented as invited or...stochastic phenomena and ii) to exploit the laser dynamics for innovative applications . The results of the project were published in 5 high-impact...optics communi- cations, optical data storage, life sciences applications , material processing and sensing. They have a huge economic impact and are

  15. Improvements to Optical Communication Capabilities Achieved through the Optical Injection of Semiconductor Lasers

    DTIC Science & Technology

    2012-03-22

    3.1.7. High-Speed Photo Detector .....................................................69 3.1.8. Bit Error Ratio Tester and Eye Diagram Analyzer...Cartoon of a directly modulated optical communications system. A description of the pulse modulation scheme can be found in Appendix A...spectrum based on (b) and (c) [24]. .... 21 Figure 2.4. Illustration of the spreading of the optical pulse as a result of material dispersion [24

  16. N-bits all-optical circular shift register based on semiconductor optical amplifier buffer

    NASA Astrophysics Data System (ADS)

    Lazzeri, Emma; Berrettini, Gianluca; Meloni, Gianluca; Bogoni, Antonella; Potì, Luca

    2011-03-01

    In the perspective of a future all-optical communication network optical shift register will play an important role especially for what concerns several binary functions, such as serial to parallel conversion and cyclic operations, that are involved in techniques allowing error detection and correction as parity check, or cyclic redundancy check. During the last decades, several attempts of realizing circulating memories or shift register in the optical domain were made, with some limits in terms of functionality, number of bit to be stored (under three), scalability or photonic integrability. In this paper, we present a new approach to realize a circulating optical shift register consisting on an SOA-based optical buffer (OB) and a bit selecting circuit (BSC). The OB is potentially integrable and is able to store a finite number of bit at high bit rate. The BSC returns consecutive bits at a lower clock rate, achieving proper shift register function. The bit selection is realized by means of four wave mixing (FWM) in a Kerr medium, and the sequence cancellation is allowed to enable new sequence storing. Experimental validation of the scheme for fB=59MHz and fB=236MHz shows optical signal to noise ratio per bit penalty of 5.6dB at BER=10-9.

  17. Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

    PubMed

    Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E

    2006-03-15

    Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

  18. Evidence for Electronic Gap-Driven Metal-Semiconductor Transition in Phase-Change Materials

    SciTech Connect

    Shakhvorostov, D.; Nistor, R; Krusin-Elbaum, L; Martyna, G; Newns, D; Elmegreen, B; Liu, X; Hughes, Z; Paul, S; et. al.

    2009-01-01

    Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class.

  19. Electro-optic metal-insulator-semiconductor-insulator-metal Mach-Zehnder plasmonic modulator

    NASA Astrophysics Data System (ADS)

    Thomas, Roney; Ikonic, Zoran; Kelsall, Robert W.

    2012-01-01

    The performance of a CMOS-compatible electro-optic Mach-Zehnder plasmonic modulator is investigated using electromagnetic and carrier transport simulations. Each arm of the Mach-Zehnder device comprises a metal-insulator-semiconductor-insulator-metal (MISIM) structure on a buried oxide substrate. Quantum mechanical effects at the oxide/semiconductor interfaces were considered in the calculation of electron density profiles across the structure, in order to determine the refractive index distribution and its dependence on applied bias. This information was used in finite element simulations of the electromagnetic modes within the MISIM structure in order to determine the Mach-Zehnder arm lengths required to achieve destructive interference and the corresponding propagation loss incurred by the device. Both inversion and accumulation mode devices were investigated, and the layer thicknesses and height were adjusted to optimise the device performance. A device loss of <8 dB is predicted for a MISIM structure with a 25 nm thick silicon layer, for which the device length is <3 μm, and <5 dB loss is predicted for the limiting case of a 5 nm thick silicon layer in a 1.2 μm long device: in both cases, the maximum operating voltage is 7.5 V.

  20. Quantum kinetic theory of optically injected electrical and spin currents in bulk semiconductors

    NASA Astrophysics Data System (ADS)

    Prepelita, Oleg; Sipe, J. E.

    2002-03-01

    We consider the relaxation of coherently controlled currents and spin currents in bulk semiconductors. The currents are injected by simultaneous irradiation with two laser beams; the magnitude of both currents is controlled by the relative phases of these two fields [1,2]. At low injected carrier densities the relaxation of the currents occurs because of the interaction of carriers with the equilibrium optical phonons. Using a quantum master equation approach, Boltzmann type microscopic equations for the averages of the electron-hole subsystem were obtained. From these microscopic equations a simple system of linear differential equations for the evolution of the macroscopic electrical current and spin current in semiconductors can be obtained and easily solved, thus vastly simplifying the calculation of current and spin current relaxation. The developed theory was applied to bulk GaAs. 1.A. Hache, Y. Kostoulas, J. L. P. Hughes, J. E. Sipe, and H. M. van Driel, Phys. Rev. Lett. 78, 306 (1997). 2.R. D. R. Bhat and J. E. Sipe, Phys. Rev. Lett. 85, 5432 (2000).

  1. Slow and fast light using nonlinear processes in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Pesala, Bala Subrahmanyam

    Ability to control the velocity of light is usually referred to as slow or fast light depending on whether the group velocity of light is reduced or increased. The slowing of light as it passes through the glass to 2/3rd its original value is a well known phenomenon. This slowing down happens due to the interaction of light with the electrons in the medium. As a general principle, stronger the interaction, larger is the reduction in velocity. Recently, a fascinating field has emerged with the objective of not only slowing down the velocity of light but also speeding it up as it goes through the medium by enhancing light-matter interaction. This unprecedented control opens up several exciting applications in various scientific disciplines ranging from nonlinear science, RF photonics to all-optical networks. Initial experiments succeeded in reducing the velocity of light more than a million times to a very impressive 17 m/s. This speed reduction is extremely useful to enhance various nonlinear processes. For RF photonic applications including phased array antennas and tunable filters, control of phase velocity of light is required while control of group velocity serves various functionalities including packet synchronization and contention resolution in an optical buffer. Within the last 10 years, several material systems have been proposed and investigated for this purpose. Schemes based on semiconductor systems for achieving slow and fast light has the advantage of extremely high speed and electrical control. In addition, they are compact, operate at room temperature and can be easily integrated with other optical subsystems. In this work, we propose to use nonlinear processes in semiconductor optical amplifiers (SOAs) for the purpose of controlling the velocity of light. The versatility of the physical processes present in SOAs enables the control of optical signals ranging from 1GHz to larger than 1000 GHz (1 THz). First, we experimentally demonstrate both

  2. Synthesis and nonlinear optical properties of semiconductor nanoparticles within ionomer solutions

    NASA Astrophysics Data System (ADS)

    Jia, Wenling

    For the first time, optical limiting performance of semiconductor nanoparticles was investigated thoroughly against particle size and composition with nanosecond laser pulses at 532 nm as well as picosecond laser pulses in the wavelength range between 680 and 900 nm. Measurement from degenerate four-wave mixing showed the dominance of third-order optical nonlinearity. A combination of optical limiting and DFWM measurements was used to extract the bound electronic nonlinear refraction. CdS(2), core-shell CdS(2)/Ag2S and ternary Cd1-xAgxS nanoparticles were prepared and stabilized within random/block ionomer solutions with a particle diameter range between 2 to 9 nm. UV-visible absorption spectra indicated the shift of absorption edge with respect to bulk materials. Selected area diffraction results showed for the first time that cubic CdS2 formed in solutions at room temperature. The results from the factorial experimental design revealed that---for CdS(2) in random ionomer solutions---the neutralization level and S:Cd ratio are two important factors influencing CdS(2) particle size, while the ionomer concentration and polymer composition are not significant factors. Free-carrier absorption (FCA) and two-photon absorption (TPA) are responsible for the optical limiting performance towards ns and ps pulses respectively. The derived free-carrier absorption cross section of nanoparticle solutions is about 10-18˜10-19 cm 2. The lowest limiting threshold is 0.4 J/cm2. Two-photon absorption coefficients were determined to be tens or a few hundreds cm/GW, which is significantly greater than the reported value for corresponding bulk materials. The determined nonlinear refractive indices are on the order of 10-8 esu, at least 1˜2 orders larger than that of bulk materials. These enhancements are attributed to the quantum confinement which results in different mechanisms of nonlinearity for semiconductor nanoparticles compared to bulk materials. Particles with larger size

  3. Spectroscopy and wavelength conversion by four-wave mixing in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Hunziker, Guido H.

    The first part of this thesis is dedicated to the study of the physics of the four-wave mixing (FWM) optical non- linearity in semiconductor optical amplifiers (SOAS). We focus our attention on the polarization properties of FWM and spectroscopic measurements of ultrafast carrier dynamics in these amplifiers. The second part presents investigations of FWM applications in the context of high-speed optical communication systems. The detuning and polarization dependence of the third- order non-linear susceptibility is presented with a model based on the density matrix formalism. Experimental verifications of the model for the polarization properties of the four-wave mixing are presented using an alternating compressive and tensile strained multiquantum-well semiconductor optical amplifier. The polarization selection rules are then used for spectroscopic measurements of the carrier dynamics in quantum well SOAs. In particular, we present new techniques to measure the stimulated carrier lifetime, the inter quantum-well transport lifetime as well as the intrinsic escape and capture time constants for quantum wells. The capture lifetime is further studied in a separate experiment involving wavelength resolved spectroscopy. We then demonstrate that strongly saturated and long SOAs (1.5 mm) are very effective wide span wavelength converters. We present bit error rate measurements for 30 nm wavelength down-conversion and 15 nm wavelength up- conversion at 10 Gb/s. We also present an application of the polarization selection rules to generate a polarization independent conversion at 2.5 Gb/s. Then, we introduce two different configurations where we use a lasing optical amplifier with a fiber Bragg grating to enhance the conversion efficiency and simplify the converter design. In the first case, we used the laser mode as pump wave and in the second case the lasing mode is injection locked to the FWM signal generated within the cavity. Finally, we present a new paradigm to

  4. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    DOE PAGES

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; ...

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends onmore » several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.« less

  5. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    SciTech Connect

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  6. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    PubMed Central

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-01-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades. PMID:26670948

  7. Modeling of Millimeter-Wave Modulation Characteristics of Semiconductor Lasers under Strong Optical Feedback

    PubMed Central

    Bakry, Ahmed

    2014-01-01

    This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated. PMID:25383381

  8. Etching of semiconductors and metals by the photonic jet with shaped optical fiber tips

    NASA Astrophysics Data System (ADS)

    Pierron, Robin; Lecler, Sylvain; Zelgowski, Julien; Pfeiffer, Pierre; Mermet, Frédéric; Fontaine, Joël

    2017-10-01

    The etching of semiconductors and metals by a photonic jet (PJ) generated with a shaped optical fiber tip is studied. Etched marks with a diameter of 1 μm have been realized on silicon, stainless steel and titanium with a 35 kHz pulsed laser, emitting 100 ns pulses at 1064 nm. The selection criteria of the fiber and its tip are discussed. We show that a 100/140 silica fiber is a good compromise which takes into account the injection, the working distance and the energy coupled in the higher-order modes. The energy balance is performed on the basis of the known ablation threshold of the material. Finally, the dependence between the etching depth and the number of pulses is studied. Saturation is observed probably due to a redeposition of the etched material, showing that a higher pulse energy is required for deeper etchings.

  9. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

    SciTech Connect

    Andreeva, E V; Il'chenko, S N; Lobintsov, A A; Shramenko, M V; Ladugin, M A; Marmalyuk, A A; Yakubovich, S D

    2013-11-30

    A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

  10. Gain recovery dynamics in semiconductor optical amplifiers with distributed feedback grating under assist light injection

    NASA Astrophysics Data System (ADS)

    Qin, Cui; Zhao, Jing; Yu, Huilong; Zhang, Jian

    2016-07-01

    The gain recovery dynamic characteristics of the semiconductor optical amplifier (SOA) with distributed feedback (DFB) grating are theoretically investigated. The interaction of the grating structure and the assist light is used to accelerate the gain recovery process in the SOA. The effects of the assist light that is injected into the SOA with DFB structure on the gain recovery dynamics, the steady-state carrier density, and field intensity distributions are analyzed, respectively. Results show that the recovery time in the DFB SOA is successfully reduced by injecting relatively high power assist light, whose wavelength is set at the gain region. Finally, under assist light injection, the effects of DFB grating on the gain recovery process are also discussed. It is shown that the gain recovery in the SOA with DFB grating is faster than that in the SOA without DFB grating. In addition, the coupling factor in the DFB grating structure can be optimized to shorten the gain recovery time.

  11. Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles

    PubMed Central

    Ichimura, Taro; Jin, Takashi; Fujita, Hideaki; Higuchi, Hideo; Watanabe, Tomonobu M.

    2014-01-01

    Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometer scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies. PMID:25120488

  12. Progress in the growth and optical properties of dilute bismide III-V semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Beaton, Daniel A.; Christian, T.; Lewis, R. B.; Alberi, K.; Mascarenhas, A.

    2015-03-01

    The dilute bismuth containing III-V semiconducting alloys of have great potential for application in many areas of semiconductor technology, such as multijunction photvoltaics and solid-state lighting. There is a large reduction of the fundamental bandgap of GaAs with bismuth incorporation resultant from the raising of the valence band maximum. Dilute bismide alloys have long been compared to the dilute nitride alloy because bismuth introduces a state near the valence band edge of the host GaAs (instrad of near the conduction band edge in the nitride alloys) that affects its optical and electronic properties. Here I will discuss some recent advances in our understanding of the surface processes involved in dilute bismide alloy growth by molecular beam epitaxy which have lead to improved film quality and the growth of new bismide alloys. The improved film quality has made it possible to further explore the properties of this material.

  13. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination.

    PubMed

    Rodrigo, P J; Lim, M; Saloma, C

    2001-02-01

    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (lambda = 830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, lambda/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker.

  14. Mode tailoring in subwavelength-dimensional semiconductor micro/nanowaveguides by coupling optical microfibers.

    PubMed

    Gu, Fuxing; Cui, Hongbin; Liao, Feng; Lin, Xing; Wang, Haifeng; Zeng, Heping

    2016-10-03

    Benefitted from large fraction of evanescent wave and high endface reflectivity, we have realized mode tailoring in subwavelength-dimensional semiconductor micro/nanowaveguides (MN-WGs) by coupling optical silica microfibers. By investigating the reflection spectra, it was found that the microfiber tips could offer effective reflection and can been used to continuously and reversibly tune the interference wavelengths by changing the contact points with the MN-WGs. The measured extinction ratio in the interference patterns was as high as ~10 dB. In addition, tunable free spectral range of photoluminescence emissions and humidity sensing were also demonstrated. Its advantages of non-destructively tuning, simple fabrication, easy interrogation, and remote monitoring, offer great possible prospects for developing miniature tunable lasers, sensors, and biological endoscopy.

  15. Modeling of millimeter-wave modulation characteristics of semiconductor lasers under strong optical feedback.

    PubMed

    Bakry, Ahmed

    2014-01-01

    This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated.

  16. Spin dynamics of an individual Cr atom in a semiconductor quantum dot under optical excitation

    SciTech Connect

    Lafuente-Sampietro, A.; Utsumi, H.; Kuroda, S.; Boukari, H.; Besombes, L.

    2016-08-01

    We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels population in Cr-doped quantum dots shows that the observed spin dynamics is dominated by the exciton-Cr interaction. These measurements also provide a lower bound in the 20 ns range for the intrinsic Cr spin relaxation time.

  17. Numerical characterization of InP-based quantum dot semiconductor optical amplifier.

    PubMed

    Nawwar, Omnia M; Emara, Ahmed; Aly, Moustafa H; Okaz, Ali M

    2016-12-10

    This paper is devoted to the development of a steady-state behavior of a quantum dot-semiconductor optical amplifier (QD-SOA). The investigated performance characteristics cover a wide range that includes material gain coefficient, spatial distribution of the occupation probabilities, fiber to fiber gain, gain spectrum as a function of the bias current, relaxation time, and capture time. A set of traveling-wave equations is used to model the signal and spontaneous photons along the device active region. The obtained results indicate a high gain that reaches 34 dB for an InAs/InGaAsP/InP-based QD-SOA, with a corresponding device length of 4 mm. The obtained signal-to-noise ratio is larger than 75 dB for all input powers without using an output filter.

  18. Dimensional signature on noise-induced excitable statistics in an optically injected semiconductor laser.

    PubMed

    Kelleher, B; Goulding, D; Huyet, G; Viktorov, E A; Erneux, T; Hegarty, S P

    2011-08-01

    Noise-induced excitability is a prevalent feature in many nonlinear dynamical systems. The optically injected semiconductor laser is one of the simplest such systems and is readily amenable to both experimental and theoretical analysis. We show that the dimensionality of this system may be tuned experimentally and that this has a strong signature on the interspike statistics. The phase of the slave laser is resolved experimentally in the frame of the master laser, allowing an examination of the dynamics at extremely low injection strengths where intensity measurements alone cannot determine the dynamics fully. Generic phase equations are found for the different dimensional scenarios. When the dimensionality is greater than 1, we show that a precursor of a homoclinic bifurcation generates a noise-induced frequency and that the homoclinic bifurcation admits a bistability in the system.

  19. Spinning nanorods--active optical manipulation of semiconductor nanorods using polarised light.

    PubMed

    Head, C Robin; Kammann, Elena; Zanella, Marco; Manna, Liberato; Lagoudakis, Pavlos G

    2012-06-21

    In this letter we show how a single beam optical trap offers the means for three-dimensional manipulation of semiconductor nanorods in solution. Furthermore rotation of the direction of the electric field provides control over the orientation of the nanorods, which is shown by polarisation analysis of two photon induced fluorescence. Statistics over tens of trapped agglomerates reveal a correlation between the measured degree of polarisation (DLP) and the size of the agglomerate which was determined by the escape frequency and the intensity of the emitted fluorescence. We estimate that we have trapped agglomerates with a volume of close to 10 times the volume of a single nanorod, which exhibited DLPs as high as 52%.

  20. Optical Properties of Planar Nanostructures Based on Semiconductor Quantum Dots and Plasmonic Metal Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bakanov, A. G.; Toropov, N. A.; Vartanyan, T. A.

    2016-03-01

    The optical properties of a composite material consisting of a thin polymer film, which is activated by semiconductor CdSe/ZnS quantum dots (QDs) and silver nanoparticles, on a transparent dielectric substrate have been investigated. It is revealed that the presence of silver nanoparticles leads to an increase in the QD absorption (by a factor of 4) and in the fluorescence intensity (by a factor of 10), whereas the fluorescence time drops by a factor of about 10. Excitation of the composite medium by a pulsed laser is found to result in narrowing of the fluorescence band and a sublinear dependence of its intensity on the pulse energy. In the absence of silver nanoparticles, the fluorescence spectrum of QDs is independent of the excitation-pulse energy density, and the fluorescence intensity depends linearly on the pulse energy in the entire range of energy densities, up to 75 mJ/cm2.