Optical band gap of thermally deposited Ge-S-Ga thin films

NASA Astrophysics Data System (ADS)

Rana, Anjli; Heera, Pawan; Singh, Bhanu Pratap; Sharma, Raman

2018-05-01

Thin films of Ge20S80-xGax glassy alloy, obtained from melt quenching technique, were deposited on the glass substrate by thermal evaporation technique under a high vacuum conditions (˜ 10-5 Torr). Absorption spectrum fitting method (ASF) is employed to obtain the optical band gap from absorption spectra. This method requires only the measurement of the absorption spectrum of the sample. The width of the band tail was also determined. Optical band gap computed from absorption spectra is found to decrease with an increase in Ga content. The evaluated optical band gap (Eg) is in well agreement with the theoretically predicted Eg and obtained from transmission spectra.

Characterization of rodlike structures in Si-Ge-GaP alloys

NASA Astrophysics Data System (ADS)

Srikant, V.; Jesser, W. A.; Rosi, F. D.

1996-07-01

High-temperature microstructure of Si-Ge alloys containing 10-15 mole % GaP were studied. Quenching the 80/20 Si-Ge alloy (80 at. % Si) from above 1125 °C and the 50/50 Si-Ge alloy (50 at. % Si) from above 1025 °C resulted in a duplex microstructure. The two-phase regions consisted of a regular array of rodlike structures (GaP) in a Si-Ge matrix whereas the monophase regions were pure Si-Ge. These rodlike structures were found to lie along the [001] direction and result in {002} spots in a [100] electron diffraction pattern. The ``rods'' were about 35 and 45 nm in diameter in the case of the 80/20 and 50/50 alloy, respectively. These structures are not stable on annealing and do not form when the solidification rate is decreased.

Ultra-low specific contact resistivity (1.4 × 10-9 Ω.cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

NASA Astrophysics Data System (ADS)

Wu, Ying; Luo, Sheng; Wang, Wei; Masudy-Panah, Saeid; Lei, Dian; Liang, Gengchiau; Gong, Xiao; Yeo, Yee-Chia

2017-12-01

A heavily Ga-doped Ge0.95Sn0.05 layer was grown on the Ge (100) substrate by molecular beam epitaxy (MBE), achieving an active doping concentration of 1.6 × 1020 cm-3 without the use of ion implantation and high temperature annealing that could cause Sn precipitation or surface segregation. An advanced nano-scale transfer length method was used to extract the specific contact resistivity ρc between the metal and the heavily doped p-Ge0.95Sn0.05 layer. By incorporating Sn into Ge and in-situ Ga doping during the MBE growth, an ultra-low ρc of 1.4 × 10-9 Ω.cm2 was achieved, which is 50% lower than the ρc of p+-Ge control and is also the lowest value obtained for metal/p-type semiconductor contacts.

Effect of 60Co γ-irradiation on structural and optical properties of thin films of Ga10Se80Hg10

NASA Astrophysics Data System (ADS)

Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

2015-08-01

Thin films of Ga10Se80Hg10 have been deposited onto a chemically cleaned Al2O3 substrates by thermal evaporation technique under vacuum. The investigated thin films are irradiated by 60Co γ-rays in the dose range of 50-150 kGy. X-ray diffraction patterns of the investigated thin films confirm the preferred crystallite growth occurs in the tetragonal phase structure. It also shows, the average crystallite size increases after γ-exposure, which indicates the crystallinity of the material increases after γ-irradiation. These results were further supported by surface morphological analysis carried out by scanning electron microscope and atomic force microscope which also shows the crystallinity of the material increases with increasing the γ-irradiation dose. The optical transmission spectra of the thin films at normal incidence were investigated in the spectral range from 190 to 1100 nm. Using the transmission spectra, the optical constants like refractive index (n) and extinction coefficient (k) were calculated based on Swanepoel's method. The optical band gap (Eg) was also estimated using Tauc's extrapolation procedure. The optical analysis shows: the value of optical band gap of investigated thin films decreases and the corresponding absorption coefficient increases continuously with increasing dose of γ-irradiation.

Photoluminescence Study of N-Type Thermal Conversion in Semi-Insulating GaAs.

DTIC Science & Technology

1982-12-01

free electron to the crystal. For example, in GaAs, a tellurium atom on an arsenic site (TeAs) or a silicon atom on a gallium site (SiGa) are donor atoms...Photoconductivity Photoluminescenc Silicon, SiGa 5.81 6.80 Germanium, GeGa 6.08 Sulfur, SAs 6.10 Selenium, SeAs 5.89 6.10 Tellurium , TeAs When an electron...34 to the neutral donor or acceptor (Ref 16:15). The following excitonic com- plexes have been observed in GaAs: (i) exciton bound to a neutron donor at

Growth of InN on Ge substrate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Doolittle, W. Alan; Liu, Rong; Mei, Jin; Ponce, Fernando; Cheung, Maurice; Chen, Fei; Furis, Madalina; Cartwright, Alexander

2005-06-01

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1) InN∥(1 1 1) Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Strain relaxation of CdTe on Ge studied by medium energy ion scattering

NASA Astrophysics Data System (ADS)

Pillet, J. C.; Pierre, F.; Jalabert, D.

2016-10-01

We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed

Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roucka, Radek, E-mail: radek@translucentinc.com; Clark, Andrew; Landini, Barbara

2015-09-28

Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction,more » single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.« less

Structures and stability of metal-doped Ge nM (n = 9, 10) clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Wei; Lu, Wen-Cai; Xia, Lin-Hua

The lowest-energy structures of neutral and cationic Ge nM (n = 9, 10; M = Si, Li, Mg, Al, Fe, Mn, Pb, Au, Ag, Yb, Pm and Dy) clusters were studied by genetic algorithm (GA) and first-principles calculations. The calculation results show that doping of the metal atoms and Si into Ge 9 and Ge 10 clusters is energetically favorable. Most of the metal-doped Ge cluster structures can be viewed as adding or substituting metal atom on the surface of the corresponding ground-state Ge n clusters. However, the neutral and cationic FeGe 9,10,MnGe 9,10 and Ge 10Al are cage-like withmore » the metal atom encapsulated inside. Such cage-like transition metal doped Ge n clusters are shown to have higher adsorption energy and thermal stability. Our calculation results suggest that Ge 9,10Fe and Ge 9Si would be used as building blocks in cluster-assembled nanomaterials because of their high stabilities.« less

Structures and stability of metal-doped Ge nM (n = 9, 10) clusters

DOE PAGES

Qin, Wei; Lu, Wen-Cai; Xia, Lin-Hua; ...

2015-06-26

The lowest-energy structures of neutral and cationic Ge nM (n = 9, 10; M = Si, Li, Mg, Al, Fe, Mn, Pb, Au, Ag, Yb, Pm and Dy) clusters were studied by genetic algorithm (GA) and first-principles calculations. The calculation results show that doping of the metal atoms and Si into Ge 9 and Ge 10 clusters is energetically favorable. Most of the metal-doped Ge cluster structures can be viewed as adding or substituting metal atom on the surface of the corresponding ground-state Ge n clusters. However, the neutral and cationic FeGe 9,10,MnGe 9,10 and Ge 10Al are cage-like withmore » the metal atom encapsulated inside. Such cage-like transition metal doped Ge n clusters are shown to have higher adsorption energy and thermal stability. Our calculation results suggest that Ge 9,10Fe and Ge 9Si would be used as building blocks in cluster-assembled nanomaterials because of their high stabilities.« less

High-frequency electromechanical resonators based on thin GaTe

NASA Astrophysics Data System (ADS)

Chitara, Basant; Ya'akobovitz, Assaf

2017-10-01

Gallium telluride (GaTe) is a layered material, which exhibits a direct bandgap (˜1.65 eV) regardless of its thickness and therefore holds great potential for integration as a core element in stretchable optomechanical and optoelectronic devices. Here, we characterize and demonstrate the elastic properties and electromechanical resonators of suspended thin GaTe nanodrums. We used atomic force microscopy to extract the Young’s modulus of GaTe (average value ˜39 GPa) and to predict the resonance frequencies of suspended GaTe nanodrums of various geometries. Electromechanical resonators fabricated from suspended GaTe revealed fundamental resonance frequencies in the range of 10-25 MHz, which closely match predicted values. Therefore, this study paves the way for creating a new generation of GaTe based nanoelectromechanical devices with a direct bandgap vibrating element, which can serve as optomechanical sensors and actuators.

Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

NASA Astrophysics Data System (ADS)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2016-08-01

Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

Spectroscopic and thermal study of a new glass from TeO2sbnd Ga2O3sbnd GeO2 system

NASA Astrophysics Data System (ADS)

Marczewska, Agnieszka; Środa, Marcin

2018-07-01

Tellurium oxide and germanium oxide based glasses are classified as the heavy metal oxide glasses, with phonon energies below 880 cm-1. These glasses transmit to longer wavelengths when compared to borate, phosphate and silicate glasses because of the heavier mass of germanium. In this paper we present a new promising TeO2sbnd Ga2O3sbnd GeO2 glasses with high thermal stability and good optical properties in the near and mid-IR regions. The glass can be easily obtained for the wide range of Te/Ge ratio, which gives opportunity to engineering desirable properties. Based on the FT-IR spectra it could be stated that the tellurite network is monotonically transformed into germanate one as the GeO2 content increases. Admixtures of GeO2 into the network of tellurite glass causes the conversion of [TeO4] to [TeO3] units. Thus, the network of the glass could be consider as a mixture of the [TeO4], [TeO3] and [GeO4] units and with Ga3+ ions playing the role of its modifier. The glasses demonstrate high transmittance in mid-IR up to 6 μm what makes these materials suitable for mid-IR applications.

Synthesis and thermoelectric properties of the (GeTe) 1-x(PbTe) x alloys

NASA Astrophysics Data System (ADS)

Li, S. P.; Li, J. Q.; Wang, Q. B.; Wang, L.; Liu, F. S.; Ao, W. Q.

2011-02-01

The Ge-rich (GeTe) 1-x(PbTe) x alloys with x = 0.10, 0.14, 0.18 and 0.22 were prepared by induction melting, ball milling and spark plasma sintering techniques. The thermoelectric properties of the samples were investigated. The experimental results show that all samples consist of the solid solutions of the two phases GeTe and PbTe. The samples are of p-type semiconductors. The existence of PbTe solution in GeTe increases its resistivity and Seebeck coefficient slightly, but reduces its thermal conductivity significantly. As result, the figures of merit for the materials can be enhanced. The maximum figure of merit ZT value of 0.81 was obtained in the sample (GeTe) 0.82(PbTe) 0.18 at 673K.

Novel Sn-Based Contact Structure for GeTe Phase Change Materials.

PubMed

Simchi, Hamed; Cooley, Kayla A; Ding, Zelong; Molina, Alex; Mohney, Suzanne E

2018-05-16

Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active material for radio frequency (RF) switches, as well as memory and novel optoelectronic devices. Considering PCM-based RF switches, parasitic resistances from Ohmic contacts can be a limiting factor in device performance. Reduction of the contact resistance ( R c ) is therefore critical for reducing the on-state resistance to meet the requirements of high-frequency RF applications. To engineer the Schottky barrier between the metal contact and GeTe, Sn was tested as an interesting candidate to alter the composition of the semiconductor near its surface, potentially forming a narrow band gap (0.2 eV) SnTe or a graded alloy with SnTe in GeTe. For this purpose, a novel contact stack of Sn/Fe/Au was employed and compared to a conventional Ti/Pt/Au stack. Two different premetallization surface treatments of HCl and deionized (DI) H 2 O were employed to make a Te-rich and Ge-rich interface, respectively. Contact resistance values were extracted using the refined transfer length method. The best results were obtained with DI H 2 O for the Sn-based contacts but HCl treatment for the Ti/Pt/Au contacts. The as-deposited contacts had the R c (ρ c ) of 0.006 Ω·mm (8 × 10 -9 Ω·cm 2 ) for Sn/Fe/Au and 0.010 Ω·mm (3 × 10 -8 Ω·cm 2 ) for Ti/Pt/Au. However, the Sn/Fe/Au contacts were thermally stable, and their resistance decreased further to 0.004 Ω·mm (4 × 10 -9 Ω·cm 2 ) after annealing at 200 °C. In contrast, the contact resistance of the Ti/Pt/Au stack increased to 0.012 Ω·mm (4 × 10 -8 Ω·cm 2 ). Transmission electron microscopy was used to characterize the interfacial reactions between the metals and GeTe. It was found that formation of SnTe at the interface, in addition to Fe diffusion (doping) into GeTe, is likely responsible for the superior performance of Sn/Fe/Au contacts, resulting in one of the lowest reported

Structures and stability of metal-doped Ge{sub n}M (n = 9, 10) clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Wei, E-mail: qinw@qdu.edu.cn; Xia, Lin-Hua; Zhao, Li-Zhen

The lowest-energy structures of neutral and cationic Ge{sub n}M (n = 9, 10; M = Si, Li, Mg, Al, Fe, Mn, Pb, Au, Ag, Yb, Pm and Dy) clusters were studied by genetic algorithm (GA) and first-principles calculations. The calculation results show that doping of the metal atoms and Si into Ge{sub 9} and Ge{sub 10} clusters is energetically favorable. Most of the metal-doped Ge cluster structures can be viewed as adding or substituting metal atom on the surface of the corresponding ground-state Ge{sub n} clusters. However, the neutral and cationic FeGe{sub 9,10},MnGe{sub 9,10} and Ge{sub 10}Al are cage-like withmore » the metal atom encapsulated inside. Such cage-like transition metal doped Ge{sub n} clusters are shown to have higher adsorption energy and thermal stability. Our calculation results suggest that Ge{sub 9,10}Fe and Ge{sub 9}Si would be used as building blocks in cluster-assembled nanomaterials because of their high stabilities.« less

LWIR HgCdTe Detectors Grown on Ge Substrates

NASA Astrophysics Data System (ADS)

Vilela, M. F.; Lofgreen, D. D.; Smith, E. P. G.; Newton, M. D.; Venzor, G. M.; Peterson, J. M.; Franklin, J. J.; Reddy, M.; Thai, Y.; Patten, E. A.; Johnson, S. M.; Tidrow, M. Z.

2008-09-01

Long-wavelength infrared (LWIR) HgCdTe p-on- n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p-on- n DLHJ detector structure (used earlier on Si substrates) on 100 mm Ge substrates in the 10 μm to 11 μm LWIR spectral region, evaluate the material properties, and obtain some preliminary detector performance data. Material characterization techniques included are X-ray rocking curves, etch pit density (EPD) measurements, compositional uniformity determined from Fourier-transform infrared (FTIR) transmission, and doping concentrations determined from secondary-ion mass spectroscopy (SIMS). Detector properties include resistance-area product (RoA), spectral response, and quantum efficiency. Results of LWIR HgCdTe detectors and test structure arrays (TSA) fabricated on both Ge and silicon (Si) substrates are presented and compared. Material properties demonstrated include X-ray full-width of half-maximum (FWHM) as low as 77 arcsec, typical etch pit densities in mid 106 cm-2 and wavelength cutoff maximum/minimum variation <2% across the full wafer. Detector characteristics were found to be nearly identical for HgCdTe grown on either Ge or Si substrates.

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

PubMed

Oh, S K; Song, C G; Jang, T; Kim, Kwang-Choong; Jo, Y J; Kwak, J S

2013-03-01

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.

Spontaneous perpendicular exchange bias effect in L10-MnGa/FeMn bilayers grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wei, D. H.; Zhao, J. H.

2018-01-01

We report on the spontaneous perpendicular exchange bias effect in as-grown L10-MnGa/FeMn bilayers. An FeMn layer with different thicknesses is introduced as an antiferromagnetic layer to couple with single-crystalline ferromagnetic L10-MnGa, which is epitaxially grown on a GaAs (001) substrate by molecular-beam epitaxy. The perpendicular exchange bias shows a strong dependence on both the thickness of the FeMn layer and the measurement temperature. A large spontaneous perpendicular exchange bias up to 8.9 kOe is achieved in L10-MnGa/FeMn bilayers at 5 K without any external magnetic treatment. The corresponding effective interfacial exchange energy Jeff is estimated to be 1.4 mJ/m2. The spontaneous perpendicular exchange bias effect in the (001) textured L10-MnGa/FeMn bilayers paves the way for spintronic devices based on exchange biased perpendicularly magnetized materials.

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

2005-01-01

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/Ge

Selective growth of Ge nanowires by low-temperature thermal evaporation.

PubMed

Sutter, Eli; Ozturk, Birol; Sutter, Peter

2008-10-29

High-quality single-crystalline Ge nanowires with electrical properties comparable to those of bulk Ge have been synthesized by vapor-liquid-solid growth using Au growth seeds on SiO(2)/Si(100) substrates and evaporation from solid Ge powder in a low-temperature process at crucible temperatures down to 700 °C. High nanowire growth rates at these low source temperatures have been identified as being due to sublimation of GeO from substantial amounts of GeO(2) on the powder. The Ge nanowire synthesis from GeO is highly selective at our substrate temperatures (420-500 °C), i.e., occurs only on Au vapor-liquid-solid growth seeds. For growth of nanowires of 10-20 µm length on Au particles, an upper bound of 0.5 nm Ge deposition was determined in areas of bare SiO(2)/Si substrate without Au nanoparticles.

Synthesis of PbTe thermoelectric film by high energy heavy ion beam mixing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Srashti; Neeleshwar, S.; Agarwal, D. C.

2011-12-12

The Te/Pb bilayer samples were prepared by sequential thermal evaporation of Pb and Te on glass substrate. These bilayer samples were irradiated by 100 MeV Ag{sup 9+} at different fluences (3x10{sup 12}, 1x10{sup 13}, and 3x10{sup 13} ions/cm{sup 2}) to synthesis PbTe by ion beam mixing. The samples were characterized by RBS to study composition and X-ray diffraction (XRD) for phase identification before and after irradiation. Thickness of Pb and Te were 75 nm and 105 nm respectively in pristine film as deduced from RBS analysis. The RBS of irradiated sample indicates the mixing between Pb and Te layers. XRDmore » revealed phases of PbTe in sample irradiated at 3x10{sup 13} ions/cm{sup 2}. This phase formation may be due to inter diffusion across the interface induced by swift heavy ion irradiation.« less

Ultrafast amorphization in Ge(10)Sb(2)Te(13) thin film induced by single femtosecond laser pulse.

PubMed

Konishi, Mitsutaka; Santo, Hisashi; Hongo, Yuki; Tajima, Kazuyuki; Hosoi, Masaharu; Saiki, Toshiharu

2010-06-20

We demonstrate amorphization in a Ge(10)Sb(2)Te(13) (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5ps of this drop.

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2011-10-01 2011-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2012-10-01 2012-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2014-10-01 2014-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Tybee Island south of the entrance to Buck Hammock Creek. (b) A line drawn from the southernmost... 46 Shipping 1 2013-10-01 2013-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...

Thermoelectric Properties of Texture-Controlled (GeTe) x (AgSbTe2)100- x ( x = 75, 80, 85, and 90) Alloys Fabricated by Gas-Atomization and Hot-Extrusion Processes

NASA Astrophysics Data System (ADS)

Kim, Hyo-Seob; Dharmaiah, Peyala; Hong, Soon-Jik

2018-06-01

In this study, p-type (GeTe) x (AgSbTe2)100- x : TAGS- x (where x = 75, 80, 85, and 90) thermoelectric materials were fabricated by a combination of gas atomization and a hot-extrusion process, and the effects of chemical composition on microstructure, thermoelectric, and mechanical properties were investigated. The extruded samples exhibited higher relative densities (> 99%), and a significant orientation degree parallel to the extrusion direction with fine and homogeneous microstructure was observed. The hardness of extruded samples was around 200-260 kgf/mm2, which indicates that they have much better mechanical properties than most other TE materials. The power factor of the extruded samples showed excellent values; the maximum power factor achieved was 3.81 × 10-3 W/mK2 for TAGS-90 at 723 K due to an effective combination of the Seebeck coefficient and electrical conductivity.

Short and medium range structures of 80GeSe2–20Ga2Se3 chalcogenide glasses

NASA Astrophysics Data System (ADS)

Petracovschi, Elena; Calvez, Laurent; Cormier, Laurent; Le Coq, David; Du, Jincheng

2018-05-01

The short and medium range structures of 80GeSe2–20Ga2Se3 (or Ge23.5Ga11.8Se64.7) chalcogenide glasses have been studied by combining ab initio molecular dynamics (AIMD) simulations and experimental neutron diffraction studies. The structure factor and total correlation function were calculated from glass structures generated from AIMD simulations and compared with neutron diffraction experiments showing reasonable agreement. The atomic structures of ternary chalcogenide glasses were analyzed in detail, and it was found that gallium atoms are four-fold coordinated by selenium (Se) and form [GaSe4] tetrahedra. Germanium atoms on average also have four-fold coordination, among which Se is 3.5 with the remaining being Ge–Ge homo-nuclear bonds. Ga and Ge tetrahedra link together mainly through corner-sharing and some edge-sharing of Se. No homo-nuclear bonds were observed among Ga atoms or between Ge and Ga. In addition, Se–Se homo-nuclear bonds and Se chains with various lengths were observed. A small fraction of Se atom triclusters that bond to three cations of Ge and Ga were also observed, confirming earlier proposals from 77Se solid state nuclear magnetic resonance studies. Furthermore, the electronic structures of ternary chalcogenide glasses were studied in terms of atomic charge and electronic density of states in order to gain insights into the chemical bonding and electronic properties, as well as to provide an explanation of the observed atomic structures in these ternary chalcogenide glasses.

Large-scale production of (GeTe) x (AgSbTe 2) 100$-$x (x=75, 80, 85, 90) with enhanced thermoelectric properties via gas-atomization and spark plasma sintering

DOE PAGES

Kim, Hyo-Seob; Ames Lab., Ames, IA; Dharmaiah, Peyala; ...

2017-01-30

(GeTe) x(AgSbTe 2) 100$-$x: TAGS thermoelectrics are an attractive class of materials due to their combination of non-toxicity and good conversion efficiency at mid-temperature ranges. Here in the present work, we have utilized energy and time efficient high-pressure gas atomization and spark-plasma sintering techniques for large-scale preparation of samples with varying composition (i.e., (GeTe) x(AgSbTe 2) 100$-$x where x = 75, 80, 85, and 90). High-temperature x-ray diffraction was used to understand the phase transformation mechanism of the as-atomized powders. Detailed high-resolution transmission electron microscopy of the sintered samples revealed the presence of nanoscale precipitates, antiphase, and twin boundaries. Themore » nanoscale twins and antiphase boundaries serve as phonon scattering centers, leading to the reduction of total thermal conductivity in TAGS-80 and 90 samples. The maximum ZT obtained was 1.56 at 623 K for TAGS-90, which was ~94% improvement compared to values previously reported. The presence of the twin boundaries also resulted in a high fracture toughness (K IC) of the TAGS-90 sample due to inhibition of dislocation movement at the twin boundary.« less

Measurement of the total hadronic cross section in e+e- annihilation below 10.56GeV

NASA Astrophysics Data System (ADS)

Besson, D.; Pedlar, T. K.; Cronin-Hennessy, D.; Gao, K. Y.; Hietala, J.; Klein, T.; Kubota, Y.; Lang, B. W.; Poling, R.; Scott, A. W.; Smith, A.; Zweber, P.; Dobbs, S.; Metreveli, Z.; Seth, K. K.; Tomaradze, A.; Ernst, J.; Ecklund, K. M.; Severini, H.; Dytman, S. A.; Love, W.; Savinov, V.; Aquines, O.; Lopez, A.; Mehrabyan, S.; Mendez, H.; Ramirez, J.; Huang, G. S.; Miller, D. H.; Pavlunin, V.; Sanghi, B.; Shipsey, I. P. J.; Xin, B.; Adams, G. S.; Anderson, M.; Cummings, J. P.; Danko, I.; Hu, D.; Moziak, B.; Napolitano, J.; He, Q.; Insler, J.; Muramatsu, H.; Park, C. S.; Thorndike, E. H.; Yang, F.; Artuso, M.; Blusk, S.; Butt, J.; Li, J.; Menaa, N.; Mountain, R.; Nisar, S.; Randrianarivony, K.; Sia, R.; Skwarnicki, T.; Stone, S.; Wang, J. C.; Zhang, K.; Bonvicini, G.; Cinabro, D.; Dubrovin, M.; Lincoln, A.; Asner, D. M.; Edwards, K. W.; Naik, P.; Briere, R. A.; Ferguson, T.; Tatishvili, G.; Vogel, H.; Watkins, M. E.; Rosner, J. L.; Adam, N. E.; Alexander, J. P.; Berkelman, K.; Cassel, D. G.; Duboscq, J. E.; Ehrlich, R.; Fields, L.; Galik, R. S.; Gibbons, L.; Gray, R.; Gray, S. W.; Hartill, D. L.; Heltsley, B. K.; Hertz, D.; Jones, C. D.; Kandaswamy, J.; Kreinick, D. L.; Kuznetsov, V. E.; Mahlke-Krüger, H.; Mohapatra, D.; Onyisi, P. U. E.; Patterson, J. R.; Peterson, D.; Pivarski, J.; Riley, D.; Ryd, A.; Sadoff, A. J.; Schwarthoff, H.; Shi, X.; Stroiney, S.; Sun, W. M.; Wilksen, T.; Athar, S. B.; Patel, R.; Potlia, V.; Yelton, J.; Rubin, P.; Cawlfield, C.; Eisenstein, B. I.; Karliner, I.; Kim, D.; Lowrey, N.; Selen, M.; White, E. J.; Wiss, J.; Mitchell, R. E.; Shepherd, M. R.

2007-10-01

Using the CLEO III detector, we measure absolute cross sections for e+e-→hadrons at seven center-of-mass energies between 6.964 and 10.538 GeV. The values of R, the ratio of hadronic and muon pair production cross sections, are determined within 2% total root-mean-square uncertainty.

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

NASA Technical Reports Server (NTRS)

Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

1988-01-01

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

Effect of antimony (Sb) addition on the linear and non-linear optical properties of amorphous Ge-Te-Sb thin films

NASA Astrophysics Data System (ADS)

Kumar, P.; Kaur, J.; Tripathi, S. K.; Sharma, I.

2017-12-01

Non-crystalline thin films of Ge20Te80-xSbx (x = 0, 2, 4, 6, 10) systems were deposited on glass substrate using thermal evaporation technique. The optical coefficients were accurately determined by transmission spectra using Swanepoel envelope method in the spectral region of 400-1600 nm. The refractive index was found to increase from 2.38 to 2.62 with the corresponding increase in Sb content over the entire spectral range. The dispersion of refractive index was discussed in terms of the single oscillator Wemple-DiDomenico model. Tauc relation for the allowed indirect transition showed decrease in optical band gap. To explore non-linearity, the spectral dependence of third order susceptibility of a-Ge-Te-Sb thin films was evaluated from change of index of refraction using Miller's rule. Susceptibility values were found to enhance rapidly from 10-13 to 10-12 (esu), with the red shift in the absorption edge. Non-linear refractive index was calculated by Fourier and Snitzer formula. The values were of the order of 10-12 esu. At telecommunication wavelength, these non-linear refractive index values showed three orders higher than that of silica glass. Dielectric constant and optical conductivity were also reported. The prepared Sb doped thin films on glass substrate with observed improved functional properties have a noble prospect in the application of nonlinear optical devices and might be used for a high speed communication fiber. Non-linear parameters showed good agreement with the values given in the literature.

Examination of the temperature dependent electronic behavior of GeTe for switching applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Champlain, James G.; Ruppalt, Laura B.; Guyette, Andrew C.

2016-06-28

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally highmore » amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.« less

Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

NASA Astrophysics Data System (ADS)

Mynbaev, K. D.; Bazhenov, N. L.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Marin, D. V.; Yakushev, M. V.

2018-05-01

Properties of HgCdTe films grown by molecular beam epitaxy on GaAs and Si substrates have been studied by performing variable-temperature photoluminescence (PL) measurements. A substantial difference in defect structure between films grown on GaAs (013) and Si (013) substrates was revealed. HgCdTe/GaAs films were mostly free of defect-related energy levels within the bandgap, which was confirmed by PL and carrier lifetime measurements. By contrast, the properties of HgCdTe/Si films are affected by uncontrolled point defects. These could not be always associated with typical "intrinsic" HgCdTe defects, such as mercury vacancies, so consideration of other defects, possibly inherent in HgCdTe/Si structures, was required. The post-growth annealing was found to have a positive effect on the defect structure by reducing the full-widths at half-maximum of excitonic PL lines for both types of films and lowering the concentration of defects specific to HgCdTe/Si.

46 CFR 7.80 - Tybee Island, GA to St. Simons Island, GA.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 1 2010-10-01 2010-10-01 false Tybee Island, GA to St. Simons Island, GA. 7.80 Section... BOUNDARY LINES Atlantic Coast § 7.80 Tybee Island, GA to St. Simons Island, GA. (a) A line drawn from the...′ N. longitude 81°02.3′ W. (St. Catherines Sound Buoy “St. C.”); thence to latitude 31°31.2′ N...

Estimation of refueling emissions based on theoretical model and effects of E10 fuel on refueling and evaporative emissions from gasoline cars.

PubMed

Yamada, Hiroyuki; Inomata, Satoshi; Tanimoto, Hiroshi; Hata, Hiroo; Tonokura, Kenichi

2018-05-01

The effects of Reid vapor pressure (RVP) on refueling emissions and the effects of ethanol 10% (E10) fuel on refueling and evaporative emissions were observed using six cars and seven fuels. The results indicated that refueling emissions can be reproduced by a simple theoretical model in which fuel vapor in the empty space in the tank is pushed out by the refueling process. In this model, the vapor pressures of fuels can be estimated by the Clausius-Clapeyron equation as a function of temperature. We also evaluated E10 fuel in terms of refueling and evaporative emissions, excluding the effect of contamination of ethanol in the canister. E10 fuel had no effect on the refueling emissions in cases without onboard refueling vapor recovery. E10 showed increased permeation emissions in evaporative emissions because of the high permeability of ethanol. And with E10 fuel, breakthrough emissions appeared earlier but broke through slower than normal fuel. Finally, canisters could store more fuel vapor with E10 fuel. Copyright © 2017 Elsevier B.V. All rights reserved.

GaSe and GaTe anisotropic layered semiconductors for radiation detectors

NASA Astrophysics Data System (ADS)

Mandal, Krishna C.; Choi, Michael; Kang, Sung Hoon; Rauh, R. David; Wei, Jiuan; Zhang, Hui; Zheng, Lili; Cui, Y.; Groza, M.; Burger, A.

2007-09-01

High quality detector grade GaSe and GaTe single crystals have been grown by a modified vertical Bridgman technique using high purity Ga (7N) and in-house zone refined (ZR) precursor materials (Se and Te). A state-of-the-art computer model, MASTRAPP, is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown crystals. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The crystals harvested from ingots of 8-10 cm length and 2.5 cm diameter, have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, low temperature photoluminescence (PL), atomic force microscopy (AFM), and optical absorption/transmission measurements. Single element devices up to 1 cm2 in area have been fabricated from the crystals and tested as radiation detectors by measuring current-voltage (I-V) characteristics and pulse height spectra using 241Am source. The crystals have shown high promise as nuclear detectors with their high dark resistivity (>=10 9 Ω .cm), good charge transport properties (μτ e ~ 1.4x10 -5 cm2/V and μτ h ~ 1.5x10 -5 cm2/V), and relatively good energy resolution (~4% energy resolution at 60 keV). Details of numerical modeling and simulation, detector fabrication, and testing using a 241Am energy source (60 keV) is presented in this paper.

Optical investigation of vacuum evaporated Se80-xTe20Sbx (x = 0, 6, 12) amorphous thin films

NASA Astrophysics Data System (ADS)

Deepika; Singh, Hukum

2017-09-01

Amorphous thin films of Se80-xTe20Sbx (x = 0, 6, 12) chalcogenide glasses has been deposited onto pre-cleaned glass substrate using thermal evaporation technique under a vacuum of 10-5 Torr. The absorption and transmission spectra of these thin films have been recorded using UV spectrophotometer in the spectral range 400-2500 nm at room temperature. Swanepoel envelope method has been employed to obtain film thickness and optical constants such as refractive index, extinction coefficient and dielectric constant. The optical band gap of the samples has been calculated using Tauc relation. The study reveals that optical band gap decreases on increase in Sb content. This is due to decrease in average single bond energy calculated using chemical bond approach. The values of urbach energy has also been computed to support the above observation. Variation of refractive index has also been studies in terms of wavelength and energy using WDD model and values of single oscillator energy and dispersion energy has been obtained.

Structural and electrical characteristics of CoGe(2) alloy films deposited heteroepitaxially on GaAs(100) using partially ionized beam deposition

NASA Astrophysics Data System (ADS)

Mello, Kevin Edward

The partially ionized beam deposition system was utilized to deposit CoGesb2 thin films heteroepitaxially on GaAs(100) substrates in a conventional vacuum. The CoGesb2 films were structurally characterized using conventional 2theta diffraction, reflection X-ray pole figure analysis, and alpha particle channeling techniques. Three distinct crystallographic relationships of the CoGesb2 films to the GaAs(100) substrates were observed, dependent upon the substrate temperature and Gesp+ ion energy used during deposition. The CoGesb2(001) (100)sp°GaAs(100) (001) orientation, which has the smallest lattice mismatch to GaAs(100), was found to occur for depositions performed at a substrate temperature during deposition near 280sp°C with approximately 1160 eV Gesp+ ions. Lowering the substrate temperature or reducing the Gesp+ ion energy results in CoGesb2(100) orientation domination with CoGe2(100) (010)sp°GaAs(100) (001) and CoGesb2(100) (001)sp°GaAs(100) (001). Substrate temperature alone was seen to produce only the CoGesb2(100) orientation. For CoGesb2(001) films, additional energy was required from Gesp+ ions in the evaporant stream. Angular yield profiles for axial Hesp{++} ion channeling yielded values for the minimum yield, Ysb{min}, of 25% for the CoGesb2(001) orientation and 34% for the CoGesb2(100) orientation. The critical angle for channeling, Psisb{c}, was measured to be 1.0sp° for both orientations. Channeling theory was used to predict the minimum yield and critical angle for each orientation. The theoretical values agreed qualitatively with the experimentally measured values, and the theory correctly predicted the lower minimum yield for the CoGesb2(001) orientation. Annealing the films to allow for epitaxial grain growth resulted in orientation selection of CoGesb2(001) at the expense of CoGesb2(100), exposing CoGesb2(100) as a metastable orientation. The CoGesb2(001) films were stable up to 500sp°C, 30 minute anneals, showing no orientation changes

Tellurium n-type doping of highly mismatched amorphous GaN 1-xAs x alloys in plasma-assisted molecular beam epitaxy

DOE PAGES

Novikov, S. V.; Ting, M.; Yu, K. M.; ...

2014-10-01

In this paper we report our study on n-type Te doping of amorphous GaN 1-xAs x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-xAs x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-xAs x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-xAs x layers hasmore » been determined.« less

Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

NASA Astrophysics Data System (ADS)

Brammertz, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, Matty

2006-05-01

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650 °C by organometallic vapor phase epitaxy on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy. All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B) structure at an energy of ~1.5 eV and a broad inner-band-gap (IB) structure at an energy of ~1.1 eV. Small strain in the thin GaAs films causes the B2B structure to be separated into a light-hole and a heavy-hole peak. At 2.5 K the good structural quality of the thin GaAs films on Ge can be observed from the narrow excitonic peaks. Peak widths of less than 1 meV are measured. GaAs films with thickness smaller than 200 nm show B2B PL spectra with characteristics of an n-type doping level of approximately 1018 at./cm3. This is caused by heavy Ge diffusion from the substrate into the GaAs at the heterointerface between the two materials. The IB structure observed in all films consists of two Gaussian peaks with energies of 1.04 and 1.17 eV. These deep trapping states arise from Ge-based complexes formed within the GaAs at the Ge-GaAs heterointerface, due to strong diffusion of Ge atoms into the GaAs. Because of similarities with Si-based complexes, the peak at 1.04 eV was identified to be due to a GeGa-GeAs complex, whereas the peak at 1.17 eV was attributed to the GeGa-VGa complex. The intensity of the IB structure decreases strongly as the GaAs film thickness is increased. PL intensity of undoped GaAs films containing antiphase domains (APDs) is four orders of magnitude lower than for similar films without APDs. This reduction in intensity is due to the electrically active Ga-Ga and As-As bonds at the boundaries between the different APDs. When the Si doping level is increased, the PL intensity of the APD-containing films is increased again as well. A film containing APDs with a Si doping level of ~1018 at./cm3 has only a factor 10

5-10 GeV neutrinos from gamma-Ray burst fireballs

PubMed

Bahcall; Meszaros

2000-08-14

A gamma-ray burst fireball is likely to contain an admixture of neutrons. Inelastic collisions between differentially streaming protons and neutrons in the fireball produce nu(&mgr;) (nu;(&mgr;)) of approximately 10 GeV as well as nu(e) (nu;(e)) of approximately 5 GeV, which could produce approximately 7 events/year in km(3) detectors, if the neutron abundance is comparable to that of protons. Photons of approximately 10 GeV from pi(0) decay and approximately 100 MeV nu;(e) from neutron decay are also produced, but will be difficult to detect. Photons with energies less, similar1 MeV from shocks following neutron decay produce a characteristic signal which may be distinguishable from the proton-related MeV photons.

A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)

NASA Astrophysics Data System (ADS)

Bellotti, Enrico; Wen, Hanqing; Dominici, Stefano; Glasmann, Andreu L.

2017-02-01

HgCdTe has been the material of choice for MWIR, and LWIR infrared sensing due to its highly tunable band gap and favorable material properties. However, HgCdTe growth and processing for the ESWIR spectral region is less developed, so alternative materials are actively researched. It is important to compare the fundamental limitations of each material to determine which offers optimal device performance. In this article, we investigate the intrinsic recombination mechanisms of ESWIR materials—InGaAs, GeSn, and HgCdTe—with cutoff wavelength near 2.5μm, and MWIR with cutoff of 5μm. First, using an empirical pseudo-potential model, we calculate the full band structure of each alloy using the virtual crystal approximation, modified to include disorder effects and spin-orbit coupling. We then evaluate the Auger and radiative recombination rates using a Green's function based model, applied to the full material band structure, yielding intrinsic carrier lifetimes for each given temperature, carrier injection, doping density, and cutoff wavelength. For example, we show that ESWIR HgCdTe has longer carrier lifetimes than InGaAs when strained or relaxed near room temperature, which is advantageous for high operating temperature photodetectors. We perform similar analyses for varying composition GeSn by comparing the calculated lifetimes with InGaAs and HgCdTe. Finally, we compare HgCdTe, InAsSb and GeSn with a cutoff in the MWIR spectral band.

Fermi LAT observations of cosmic-ray electrons from 7 GeV to 1 TeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ackermann, M.; Ajello, M.; Bechtol, K.

We present the results of our analysis of cosmic-ray electrons using about 8x10{sup 6} electron candidates detected in the first 12 months on-orbit by the Fermi Large Area Telescope. This work extends our previously published cosmic-ray electron spectrum down to 7 GeV, giving a spectral range of approximately 2.5 decades up to 1 TeV. We describe in detail the analysis and its validation using beam-test and on-orbit data. In addition, we describe the spectrum measured via a subset of events selected for the best energy resolution as a cross-check on the measurement using the full event sample. Our electron spectrummore » can be described with a power law {proportional_to}E{sup -3.08{+-}0.05} with no prominent spectral features within systematic uncertainties. Within the limits of our uncertainties, we can accommodate a slight spectral hardening at around 100 GeV and a slight softening above 500 GeV.« less

Dielectric study of chalcogenide (Se80Te20)94Ge6 glass

NASA Astrophysics Data System (ADS)

Sharma, Neha; Patial, Balbir Singh; Thakur, Nagesh

2018-04-01

In the present study, dielectric characteristics specifically dielectric constant (ɛ'), dielectric loss (ɛ″) and AC conductivity (σAC) have been investigated for chalcogenide (Se80Te20)94Ge6 glass in the frequency range from 1Hz to 1MHz and within the temperature range from 300 K to 380 K. ɛ'(ω) and ɛ″(ω) are found to be frequency and temperature dependent. This behaviour is interpreted on the basis of Guintini's theory of dielectric dispersion. The investigated glass obeys the power law ωs (s<1) and decreases as temperature rises. The obtained results are discussed in terms of the correlation barrier hopping (CBH) model proposed by Elliot.

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

NASA Technical Reports Server (NTRS)

Xing, G. C.; Bachmann, Klaus J.; Posthill, J. B.; Timmons, M. L.

1993-01-01

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Interfacial Structure and Chemistry of GaN on Ge(111)

NASA Astrophysics Data System (ADS)

Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R.; Barnard, Jonathan S.; Humphreys, Colin J.

2013-12-01

The interface of GaN grown on Ge(111) by plasma-assisted molecular beam epitaxy is resolved by aberration corrected scanning transmission electron microscopy. A novel interfacial structure with a 5∶4 closely spaced atomic bilayer is observed that explains why the interface is flat, crystalline, and free of GeNx. Density functional theory based total energy calculations show that the interface bilayer contains Ge and Ga atoms, with no N atoms. The 5∶4 bilayer at the interface has a lower energy than a direct stacking of GaN on Ge(111) and enables the 5∶4 lattice-matching growth of GaN.

Energy Spectrum of Cosmic-Ray Electron and Positron from 10 GeV to 3 TeV Observed with the Calorimetric Electron Telescope on the International Space Station

NASA Astrophysics Data System (ADS)

Adriani, O.; Akaike, Y.; Asano, K.; Asaoka, Y.; Bagliesi, M. G.; Bigongiari, G.; Binns, W. R.; Bonechi, S.; Bongi, M.; Brogi, P.; Buckley, J. H.; Cannady, N.; Castellini, G.; Checchia, C.; Cherry, M. L.; Collazuol, G.; di Felice, V.; Ebisawa, K.; Fuke, H.; Guzik, T. G.; Hams, T.; Hareyama, M.; Hasebe, N.; Hibino, K.; Ichimura, M.; Ioka, K.; Ishizaki, W.; Israel, M. H.; Javaid, A.; Kasahara, K.; Kataoka, J.; Kataoka, R.; Katayose, Y.; Kato, C.; Kawanaka, N.; Kawakubo, Y.; Krawczynski, H. S.; Krizmanic, J. F.; Kuramata, S.; Lomtadze, T.; Maestro, P.; Marrocchesi, P. S.; Messineo, A. M.; Mitchell, J. W.; Miyake, S.; Mizutani, K.; Moiseev, A. A.; Mori, K.; Mori, M.; Mori, N.; Motz, H. M.; Munakata, K.; Murakami, H.; Nakahira, S.; Nishimura, J.; de Nolfo, G. A.; Okuno, S.; Ormes, J. F.; Ozawa, S.; Pacini, L.; Palma, F.; Papini, P.; Penacchioni, A. V.; Rauch, B. F.; Ricciarini, S. B.; Sakai, K.; Sakamoto, T.; Sasaki, M.; Shimizu, Y.; Shiomi, A.; Sparvoli, R.; Spillantini, P.; Stolzi, F.; Takahashi, I.; Takayanagi, M.; Takita, M.; Tamura, T.; Tateyama, N.; Terasawa, T.; Tomida, H.; Torii, S.; Tsunesada, Y.; Uchihori, Y.; Ueno, S.; Vannuccini, E.; Wefel, J. P.; Yamaoka, K.; Yanagita, S.; Yoshida, A.; Yoshida, K.; Yuda, T.; Calet Collaboration

2017-11-01

First results of a cosmic-ray electron and positron spectrum from 10 GeV to 3 TeV is presented based upon observations with the CALET instrument on the International Space Station starting in October, 2015. Nearly a half million electron and positron events are included in the analysis. CALET is an all-calorimetric instrument with total vertical thickness of 30 X0 and a fine imaging capability designed to achieve a large proton rejection and excellent energy resolution well into the TeV energy region. The observed energy spectrum over 30 GeV can be fit with a single power law with a spectral index of -3.152 ±0.016 (stat+syst ). Possible structure observed above 100 GeV requires further investigation with increased statistics and refined data analysis.

Operation of the CESR-TA vertical beam size monitor at Eb = 4 GeV

NASA Astrophysics Data System (ADS)

Alexander, J. P.; Conolly, C.; Edwards, E.; Flanagan, J. W.; Fontes, E.; Heltsley, B. K.; Lyndaker, A.; Peterson, D. P.; Rider, N. T.; Rubin, D. L.; Seeley, R.; Shanks, J.

2015-10-01

We describe operation of the CESR-TA vertical beam size monitor (xBSM) with e± beams with Eb=4 GeV. The xBSM measures vertical beam size by imaging synchrotron radiation x-rays through an optical element onto a detector array of 32 InGaAs photodiodes with 50 μm pitch. The device has previously been successfully used to measure vertical beam sizes of 10-100 μm on a bunch-by-bunch, turn-by-turn basis at e± beam energies of ~2 GeV and source magnetic fields below 2.8 kG, for which the detector required calibration for incident x-rays of 1-5 keV. At Eb = 4.0 GeV and B=4.5 kG, however, the incident synchrotron radiation spectrum extends to ~20 keV, requiring calibration of detector response in that regime. Such a calibration is described and then used to analyze data taken with several different thicknesses of filters in front of the detector. We obtain a relative precision of better than 4% on beam size measurement from 15 to 100 μm over several different ranges of x-ray energy, including both 1-12 keV and 6-17 keV. The response of an identical detector, but tilted vertically by 60° in order to increase magnification without a longer beamline, is measured and shown to improve x-ray detection above 4 keV without compromising sensitivity to beam size. We also investigate operation of a coded aperture using gold masking backed by synthetic diamond.

Vertical beam size measurement in the CESR-TA e+e- storage ring using x-rays from synchrotron radiation

NASA Astrophysics Data System (ADS)

Alexander, J. P.; Chatterjee, A.; Conolly, C.; Edwards, E.; Ehrlichman, M. P.; Fontes, E.; Heltsley, B. K.; Hopkins, W.; Lyndaker, A.; Peterson, D. P.; Rider, N. T.; Rubin, D. L.; Savino, J.; Seeley, R.; Shanks, J.; Flanagan, J. W.

2014-06-01

We describe the construction and operation of an X-ray beam size monitor (xBSM), a device measuring e+ and e- beam sizes in the CESR-TA storage ring using synchrotron radiation. The device can measure vertical beam sizes of 10-100μm on a turn-by-turn, bunch-by-bunch basis at e± beam energies of ~2GeV. At such beam energies the xBSM images X-rays of ɛ≈1-10keV (λ≈0.1-1nm) that emerge from a hard-bend magnet through a single- or multiple-slit (coded aperture) optical element onto an array of 32 InGaAs photodiodes with 50μm pitch. Beamlines and detectors are entirely in-vacuum, enabling single-shot beam size measurement down to below 0.1 mA (2.5×109 particles) per bunch and inter-bunch spacing of as little as 4 ns. At Eb=2.1GeV, systematic precision of ~1μm is achieved for a beam size of ~12μm; this is expected to scale as ∝1/σb and ∝1/Eb. Achieving this precision requires comprehensive alignment and calibration of the detector, optical elements, and X-ray beam. Data from the xBSM have been used to extract characteristics of beam oscillations on long and short timescales, and to make detailed studies of low-emittance tuning, intra-beam scattering, electron cloud effects, and multi-bunch instabilities.

Precision Measurement of the (e++e-) Flux in Primary Cosmic Rays from 0.5 GeV to 1 TeV with the Alpha Magnetic Spectrometer on the International Space Station

NASA Astrophysics Data System (ADS)

Aguilar, M.; Aisa, D.; Alpat, B.; Alvino, A.; Ambrosi, G.; Andeen, K.; Arruda, L.; Attig, N.; Azzarello, P.; Bachlechner, A.; Barao, F.; Barrau, A.; Barrin, L.; Bartoloni, A.; Basara, L.; Battarbee, M.; Battiston, R.; Bazo, J.; Becker, U.; Behlmann, M.; Beischer, B.; Berdugo, J.; Bertucci, B.; Bigongiari, G.; Bindi, V.; Bizzaglia, S.; Bizzarri, M.; Boella, G.; de Boer, W.; Bollweg, K.; Bonnivard, V.; Borgia, B.; Borsini, S.; Boschini, M. J.; Bourquin, M.; Burger, J.; Cadoux, F.; Cai, X. D.; Capell, M.; Caroff, S.; Casaus, J.; Cascioli, V.; Castellini, G.; Cernuda, I.; Cervelli, F.; Chae, M. J.; Chang, Y. H.; Chen, A. I.; Chen, H.; Cheng, G. M.; Chen, H. S.; Cheng, L.; Chikanian, A.; Chou, H. Y.; Choumilov, E.; Choutko, V.; Chung, C. H.; Clark, C.; Clavero, R.; Coignet, G.; Consolandi, C.; Contin, A.; Corti, C.; Coste, B.; Crispoltoni, M.; Cui, Z.; Dai, M.; Delgado, C.; Della Torre, S.; Demirköz, M. B.; Derome, L.; Di Falco, S.; Di Masso, L.; Dimiccoli, F.; Díaz, C.; von Doetinchem, P.; Donnini, F.; Du, W. J.; Duranti, M.; D'Urso, D.; Eline, A.; Eppling, F. J.; Eronen, T.; Fan, Y. Y.; Farnesini, L.; Feng, J.; Fiandrini, E.; Fiasson, A.; Finch, E.; Fisher, P.; Galaktionov, Y.; Gallucci, G.; García, B.; García-López, R.; Gargiulo, C.; Gast, H.; Gebauer, I.; Gervasi, M.; Ghelfi, A.; Gillard, W.; Giovacchini, F.; Goglov, P.; Gong, J.; Goy, C.; Grabski, V.; Grandi, D.; Graziani, M.; Guandalini, C.; Guerri, I.; Guo, K. H.; Habiby, M.; Haino, S.; Han, K. C.; He, Z. H.; Heil, M.; Hoffman, J.; Hsieh, T. H.; Huang, Z. C.; Huh, C.; Incagli, M.; Ionica, M.; Jang, W. Y.; Jinchi, H.; Kanishev, K.; Kim, G. N.; Kim, K. S.; Kirn, Th.; Kossakowski, R.; Kounina, O.; Kounine, A.; Koutsenko, V.; Krafczyk, M. S.; Kunz, S.; La Vacca, G.; Laudi, E.; Laurenti, G.; Lazzizzera, I.; Lebedev, A.; Lee, H. T.; Lee, S. C.; Leluc, C.; Li, H. L.; Li, J. Q.; Li, Q.; Li, Q.; Li, T. X.; Li, W.; Li, Y.; Li, Z. H.; Li, Z. Y.; Lim, S.; Lin, C. H.; Lipari, P.; Lippert, T.; Liu, D.; Liu, H.; Lomtadze, T.; Lu, M. J.; Lu, Y. S.; Luebelsmeyer, K.; Luo, F.; Luo, J. Z.; Lv, S. S.; Majka, R.; Malinin, A.; Mañá, C.; Marín, J.; Martin, T.; Martínez, G.; Masi, N.; Maurin, D.; Menchaca-Rocha, A.; Meng, Q.; Mo, D. C.; Morescalchi, L.; Mott, P.; Müller, M.; Ni, J. Q.; Nikonov, N.; Nozzoli, F.; Nunes, P.; Obermeier, A.; Oliva, A.; Orcinha, M.; Palmonari, F.; Palomares, C.; Paniccia, M.; Papi, A.; Pauluzzi, M.; Pedreschi, E.; Pensotti, S.; Pereira, R.; Pilo, F.; Piluso, A.; Pizzolotto, C.; Plyaskin, V.; Pohl, M.; Poireau, V.; Postaci, E.; Putze, A.; Quadrani, L.; Qi, X. M.; Räihä, T.; Rancoita, P. G.; Rapin, D.; Ricol, J. S.; Rodríguez, I.; Rosier-Lees, S.; Rozhkov, A.; Rozza, D.; Sagdeev, R.; Sandweiss, J.; Saouter, P.; Sbarra, C.; Schael, S.; Schmidt, S. M.; Schuckardt, D.; Schulz von Dratzig, A.; Schwering, G.; Scolieri, G.; Seo, E. S.; Shan, B. S.; Shan, Y. H.; Shi, J. Y.; Shi, X. Y.; Shi, Y. M.; Siedenburg, T.; Son, D.; Spada, F.; Spinella, F.; Sun, W.; Sun, W. H.; Tacconi, M.; Tang, C. P.; Tang, X. W.; Tang, Z. C.; Tao, L.; Tescaro, D.; Ting, Samuel C. C.; Ting, S. M.; Tomassetti, N.; Torsti, J.; Türkoǧlu, C.; Urban, T.; Vagelli, V.; Valente, E.; Vannini, C.; Valtonen, E.; Vaurynovich, S.; Vecchi, M.; Velasco, M.; Vialle, J. P.; Wang, L. Q.; Wang, Q. L.; Wang, R. S.; Wang, X.; Wang, Z. X.; Weng, Z. L.; Whitman, K.; Wienkenhöver, J.; Wu, H.; Xia, X.; Xie, M.; Xie, S.; Xiong, R. Q.; Xin, G. M.; Xu, N. S.; Xu, W.; Yan, Q.; Yang, J.; Yang, M.; Ye, Q. H.; Yi, H.; Yu, Y. J.; Yu, Z. Q.; Zeissler, S.; Zhang, J. H.; Zhang, M. T.; Zhang, X. B.; Zhang, Z.; Zheng, Z. M.; Zhuang, H. L.; Zhukov, V.; Zichichi, A.; Zimmermann, N.; Zuccon, P.; Zurbach, C.; AMS Collaboration

2014-11-01

We present a measurement of the cosmic ray (e++e-) flux in the range 0.5 GeV to 1 TeV based on the analysis of 10.6 million (e++e-) events collected by AMS. The statistics and the resolution of AMS provide a precision measurement of the flux. The flux is smooth and reveals new and distinct information. Above 30.2 GeV, the flux can be described by a single power law with a spectral index γ =-3.170 ±0.008 (stat+syst)±0.008 (energy scale) .

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, J.; Levin, E. M.; Lee, Y.

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band ismore » separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

DOE PAGES

Cui, J.; Levin, E. M.; Lee, Y.; ...

2016-08-18

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band ismore » separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

Plasma Accelerators Race to 10 GeV and Beyond

NASA Astrophysics Data System (ADS)

Katsouleas, Tom

2005-10-01

This paper reviews the concepts, recent progress and current challenges for realizing the tremendous electric fields in relativistic plasma waves for applications ranging from tabletop particle accelerators to high-energy physics. Experiments in the 90's on laser-driven plasma wakefield accelerators at several laboratories around the world demonstrated the potential for plasma wakefields to accelerate intense bunches of self-trapped particles at rates as high as 100 GeV/m in mm-scale gas jets. These early experiments offered impressive gradients but large energy spread (100%) and short interaction lengths. Major breakthroughs have recently occurred on both fronts. Three groups (LBL-US, LOA-France and RAL-UK) have now entered a new regime of laser wakefield acceleration resulting in 100 MeV mono-energetic beams with up to nanoCoulombs of charge and very small angular spread. Simulations suggest that current lasers are just entering this new regime, and the scaling to higher energies appears attractive. In parallel with the progress in laser-driven wakefields, particle-beam driven wakefield accelerators are making large strides. A series of experiments using the 30 GeV beam of the Stanford Linear Accelerator Center (SLAC) has demonstrated high-gradient acceleration of electrons and positrons in meter-scale plasmas. The UCLA/USC/SLAC collaboration has accelerated electrons beyond 1 GeV and is aiming at 10 GeV in 30 cm as the next step toward a ``plasma afterburner,'' a concept for doubling the energy of a high-energy collider in a few tens of meters of plasma. In addition to wakefield acceleration, these and other experiments have demonstrated the rich physics bounty to be reaped from relativistic beam-plasma interactions. This includes plasma lenses capable of focusing particle beams to the highest density ever produced, collective radiation mechanisms capable of generating high-brightness x-ray beams, collective refraction of particles at a plasma interface, and

A machine learning method to separate cosmic ray electrons from protons from 10 to 100 GeV using DAMPE data

NASA Astrophysics Data System (ADS)

Zhao, Hao; Peng, Wen-Xi; Wang, Huan-Yu; Qiao, Rui; Guo, Dong-Ya; Xiao, Hong; Wang, Zhao-Min

2018-06-01

DArk Matter Particle Explorer (DAMPE) is a general purpose high energy cosmic ray and gamma ray observatory, aiming to detect high energy electrons and gammas in the energy range 5 GeV to 10 TeV and hundreds of TeV for nuclei. This paper provides a method using machine learning to identify electrons and separate them from gammas, protons, helium and heavy nuclei with the DAMPE data acquired from 2016 January 1 to 2017 June 30, in the energy range from 10 to 100 GeV.

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

2002-01-01

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Influence of Ge addition on the optical properties of As40Se50Ge10 thin film probed by spectroscopy techniques

NASA Astrophysics Data System (ADS)

Naik, Ramakanta; Pradhan, Jagnaseni; Sripan, Chinnaiyah; Ganesan, R.

2018-05-01

The thin films of As40Se60 and As40Se50Ge10 were prepared on glass substrates by thermal evaporation method with thickness 1000 nm. The prepared films were amorphous in nature which was confirmed through X-ray diffraction. The chemical composition and the surface picture were obtained from energy dispersive X-ray analysis and Scanning Electron Microscopy analysis. The transmission data of the two films were collected in the wavelength range 400-1000 nm. The transmission percentage is found to be decreased whereas the absorption coefficient is increased with the Ge addition. The addition of Ge into As40Se60 is found to increase the refractive index and the extinction coefficient of As40Se50Ge10 thin film. The decrease in optical band gap is explained on the basis of increase in density of states and disorderness due to Ge addition. The optical absorption in the film is due to allowed indirect transition, and the homopolar bond density is increased with Ge addition. The Raman shift observed in the two films clearly supports the optical changes due to Ge addition.

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Precision Measurement of the (e^{+}+e^{-}) Flux in Primary Cosmic Rays from 0.5 GeV to 1 TeV with the Alpha Magnetic Spectrometer on the International Space Station.

PubMed

Aguilar, M; Aisa, D; Alpat, B; Alvino, A; Ambrosi, G; Andeen, K; Arruda, L; Attig, N; Azzarello, P; Bachlechner, A; Barao, F; Barrau, A; Barrin, L; Bartoloni, A; Basara, L; Battarbee, M; Battiston, R; Bazo, J; Becker, U; Behlmann, M; Beischer, B; Berdugo, J; Bertucci, B; Bigongiari, G; Bindi, V; Bizzaglia, S; Bizzarri, M; Boella, G; de Boer, W; Bollweg, K; Bonnivard, V; Borgia, B; Borsini, S; Boschini, M J; Bourquin, M; Burger, J; Cadoux, F; Cai, X D; Capell, M; Caroff, S; Casaus, J; Cascioli, V; Castellini, G; Cernuda, I; Cervelli, F; Chae, M J; Chang, Y H; Chen, A I; Chen, H; Cheng, G M; Chen, H S; Cheng, L; Chikanian, A; Chou, H Y; Choumilov, E; Choutko, V; Chung, C H; Clark, C; Clavero, R; Coignet, G; Consolandi, C; Contin, A; Corti, C; Coste, B; Crispoltoni, M; Cui, Z; Dai, M; Delgado, C; Della Torre, S; Demirköz, M B; Derome, L; Di Falco, S; Di Masso, L; Dimiccoli, F; Díaz, C; von Doetinchem, P; Donnini, F; Du, W J; Duranti, M; D'Urso, D; Eline, A; Eppling, F J; Eronen, T; Fan, Y Y; Farnesini, L; Feng, J; Fiandrini, E; Fiasson, A; Finch, E; Fisher, P; Galaktionov, Y; Gallucci, G; García, B; García-López, R; Gargiulo, C; Gast, H; Gebauer, I; Gervasi, M; Ghelfi, A; Gillard, W; Giovacchini, F; Goglov, P; Gong, J; Goy, C; Grabski, V; Grandi, D; Graziani, M; Guandalini, C; Guerri, I; Guo, K H; Habiby, M; Haino, S; Han, K C; He, Z H; Heil, M; Hoffman, J; Hsieh, T H; Huang, Z C; Huh, C; Incagli, M; Ionica, M; Jang, W Y; Jinchi, H; Kanishev, K; Kim, G N; Kim, K S; Kirn, Th; Kossakowski, R; Kounina, O; Kounine, A; Koutsenko, V; Krafczyk, M S; Kunz, S; La Vacca, G; Laudi, E; Laurenti, G; Lazzizzera, I; Lebedev, A; Lee, H T; Lee, S C; Leluc, C; Li, H L; Li, J Q; Li, Q; Li, Q; Li, T X; Li, W; Li, Y; Li, Z H; Li, Z Y; Lim, S; Lin, C H; Lipari, P; Lippert, T; Liu, D; Liu, H; Lomtadze, T; Lu, M J; Lu, Y S; Luebelsmeyer, K; Luo, F; Luo, J Z; Lv, S S; Majka, R; Malinin, A; Mañá, C; Marín, J; Martin, T; Martínez, G; Masi, N; Maurin, D; Menchaca-Rocha, A; Meng, Q; Mo, D C; Morescalchi, L; Mott, P; Müller, M; Ni, J Q; Nikonov, N; Nozzoli, F; Nunes, P; Obermeier, A; Oliva, A; Orcinha, M; Palmonari, F; Palomares, C; Paniccia, M; Papi, A; Pauluzzi, M; Pedreschi, E; Pensotti, S; Pereira, R; Pilo, F; Piluso, A; Pizzolotto, C; Plyaskin, V; Pohl, M; Poireau, V; Postaci, E; Putze, A; Quadrani, L; Qi, X M; Räihä, T; Rancoita, P G; Rapin, D; Ricol, J S; Rodríguez, I; Rosier-Lees, S; Rozhkov, A; Rozza, D; Sagdeev, R; Sandweiss, J; Saouter, P; Sbarra, C; Schael, S; Schmidt, S M; Schuckardt, D; Schulz von Dratzig, A; Schwering, G; Scolieri, G; Seo, E S; Shan, B S; Shan, Y H; Shi, J Y; Shi, X Y; Shi, Y M; Siedenburg, T; Son, D; Spada, F; Spinella, F; Sun, W; Sun, W H; Tacconi, M; Tang, C P; Tang, X W; Tang, Z C; Tao, L; Tescaro, D; Ting, Samuel C C; Ting, S M; Tomassetti, N; Torsti, J; Türkoğlu, C; Urban, T; Vagelli, V; Valente, E; Vannini, C; Valtonen, E; Vaurynovich, S; Vecchi, M; Velasco, M; Vialle, J P; Wang, L Q; Wang, Q L; Wang, R S; Wang, X; Wang, Z X; Weng, Z L; Whitman, K; Wienkenhöver, J; Wu, H; Xia, X; Xie, M; Xie, S; Xiong, R Q; Xin, G M; Xu, N S; Xu, W; Yan, Q; Yang, J; Yang, M; Ye, Q H; Yi, H; Yu, Y J; Yu, Z Q; Zeissler, S; Zhang, J H; Zhang, M T; Zhang, X B; Zhang, Z; Zheng, Z M; Zhuang, H L; Zhukov, V; Zichichi, A; Zimmermann, N; Zuccon, P; Zurbach, C

2014-11-28

We present a measurement of the cosmic ray (e^{+}+e^{-}) flux in the range 0.5 GeV to 1 TeV based on the analysis of 10.6 million (e^{+}+e^{-}) events collected by AMS. The statistics and the resolution of AMS provide a precision measurement of the flux. The flux is smooth and reveals new and distinct information. Above 30.2 GeV, the flux can be described by a single power law with a spectral index γ=-3.170±0.008(stat+syst)±0.008(energy scale).

Precision Measurement of the ( e + + e - ) Flux in Primary Cosmic Rays from 0.5 GeV to 1 TeV with the Alpha Magnetic Spectrometer on the International Space Station

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguilar, M.; Aisa, D.; Alpat, B.

2014-11-26

We present a measurement of the cosmic ray (e ++e -) flux in the range 0.5 GeV to 1 TeV based on the analysis of 10.6 million (e ++e -) events collected by AMS. The statistics and the resolution of AMS provide a precision measurement of the flux. The flux is smooth and reveals new and distinct information. Above 30.2 GeV, the flux can be described by a single power law with a spectral index γ= -3.170 ± 0.008(stat+syst) ± 0.008(energy scale).

Fermi LAT observations of cosmic-ray electrons from 7 GeV to 1 TeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ackermann, M.

We present the results of our analysis of cosmic-ray electrons using about 8 × 10 6 electron candidates detected in the first 12 months on-orbit by the Fermi Large Area Telescope. This work extends our previously published cosmic-ray electron spectrum down to 7 GeV, giving a spectral range of approximately 2.5 decades up to 1 TeV. We describe in detail the analysis and its validation using beam-test and on-orbit data. In addition, we describe the spectrum measured via a subset of events selected for the best energy resolution as a cross-check on the measurement using the full event sample. Ourmore » electron spectrum can be described with a power law ∝ E - 3.08 ± 0.05 with no prominent spectral features within systematic uncertainties. Within the limits of our uncertainties, we can accommodate a slight spectral hardening at around 100 GeV and a slight softening above 500 GeV.« less

Fermi LAT observations of cosmic-ray electrons from 7 GeV to 1 TeV

DOE PAGES

Ackermann, M.

2010-11-01

We present the results of our analysis of cosmic-ray electrons using about 8 × 10 6 electron candidates detected in the first 12 months on-orbit by the Fermi Large Area Telescope. This work extends our previously published cosmic-ray electron spectrum down to 7 GeV, giving a spectral range of approximately 2.5 decades up to 1 TeV. We describe in detail the analysis and its validation using beam-test and on-orbit data. In addition, we describe the spectrum measured via a subset of events selected for the best energy resolution as a cross-check on the measurement using the full event sample. Ourmore » electron spectrum can be described with a power law ∝ E - 3.08 ± 0.05 with no prominent spectral features within systematic uncertainties. Within the limits of our uncertainties, we can accommodate a slight spectral hardening at around 100 GeV and a slight softening above 500 GeV.« less

Enthalpy relaxation kinetics of Ge20Te(80-y)Sey far-infrared glasses in the glass transition range

NASA Astrophysics Data System (ADS)

Svoboda, Roman; Málek, Jiří

2016-06-01

Differential scanning calorimetry was used to study enthalpy relaxation kinetics of the Ge20Te(80-y)Sey infrared chalcogenide glasses for the compositional range y = 0-8. The relaxation behaviour was described in terms of the phenomenological Tool-Narayanaswamy-Moynihan (TNM) model. The direct curve-fitting procedure was used to determine the values of TNM parameters. Compositional evolution of the TNM parameters was interpreted with respect to the involved structural entities and their motions. Based on the joint Raman scattering study, the addition of Se leads to increased amount of edge-shared GeTe4-xSex tetrahedra. While the primary structural basis for the relaxation movements appears not to be affected by addition of Se (constant value of non-linearity), changes of the non-exponentiality parameter indicate increased structural variability occurring within the groups of directly interlinked tetrahedra, which were found to carry the main portion of relaxation movements. Increased activation energy was explained by the presence of significantly stronger Ge-Se bonds and increased amount of edge-shared tetrahedra.

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

NASA Technical Reports Server (NTRS)

Xiao, Ye-Gao; Bhat, Ishwara; Refaat, Tamer F.; Abedin, M. Nurul; Shao, Qing-Hui

2005-01-01

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Energy Spectrum of Cosmic-Ray Electron and Positron from 10 GeV to 3 TeV Observed with the Calorimetric Electron Telescope on the International Space Station.

PubMed

Adriani, O; Akaike, Y; Asano, K; Asaoka, Y; Bagliesi, M G; Bigongiari, G; Binns, W R; Bonechi, S; Bongi, M; Brogi, P; Buckley, J H; Cannady, N; Castellini, G; Checchia, C; Cherry, M L; Collazuol, G; Di Felice, V; Ebisawa, K; Fuke, H; Guzik, T G; Hams, T; Hareyama, M; Hasebe, N; Hibino, K; Ichimura, M; Ioka, K; Ishizaki, W; Israel, M H; Javaid, A; Kasahara, K; Kataoka, J; Kataoka, R; Katayose, Y; Kato, C; Kawanaka, N; Kawakubo, Y; Krawczynski, H S; Krizmanic, J F; Kuramata, S; Lomtadze, T; Maestro, P; Marrocchesi, P S; Messineo, A M; Mitchell, J W; Miyake, S; Mizutani, K; Moiseev, A A; Mori, K; Mori, M; Mori, N; Motz, H M; Munakata, K; Murakami, H; Nakahira, S; Nishimura, J; de Nolfo, G A; Okuno, S; Ormes, J F; Ozawa, S; Pacini, L; Palma, F; Papini, P; Penacchioni, A V; Rauch, B F; Ricciarini, S B; Sakai, K; Sakamoto, T; Sasaki, M; Shimizu, Y; Shiomi, A; Sparvoli, R; Spillantini, P; Stolzi, F; Takahashi, I; Takayanagi, M; Takita, M; Tamura, T; Tateyama, N; Terasawa, T; Tomida, H; Torii, S; Tsunesada, Y; Uchihori, Y; Ueno, S; Vannuccini, E; Wefel, J P; Yamaoka, K; Yanagita, S; Yoshida, A; Yoshida, K; Yuda, T

2017-11-03

First results of a cosmic-ray electron and positron spectrum from 10 GeV to 3 TeV is presented based upon observations with the CALET instrument on the International Space Station starting in October, 2015. Nearly a half million electron and positron events are included in the analysis. CALET is an all-calorimetric instrument with total vertical thickness of 30 X_{0} and a fine imaging capability designed to achieve a large proton rejection and excellent energy resolution well into the TeV energy region. The observed energy spectrum over 30 GeV can be fit with a single power law with a spectral index of -3.152±0.016 (stat+syst). Possible structure observed above 100 GeV requires further investigation with increased statistics and refined data analysis.

Purification and labeling strategies for (68)Ga from (68)Ge/ (68)Ga generator eluate.

PubMed

Mueller, Dirk; Klette, Ingo; Baum, Richard P

2013-01-01

For successful labeling, (68)Ge/(68)Ga generator eluate has to be concentrated (from 10 mL or more to less than 1 mL) and to be purified of metallic impurities, especially Fe(III), and (68)Ge breakthrough. Anionic, cationic and fractional elution methods are well known. We describe two new methods: (1) a combined cationic-anionic purification and (2) an easy-to-use and reliable cationic purification with NaCl solution. Using the first method, (68)Ga from 10 mL generator eluate was collected on a SCX cartridge, then eluted with 1.0 mL 5.5 M HCl directly on an anion exchanger (30 mg AG1X8). After drying with a stream of helium, (68)Ga was eluted with 0.4 mL water into the reaction vial. We provide as an example labeling of BPAMD. Using the second method, (68)Ga from 10 mL generator eluate was collected on a SCX cartridge, then eluted with a hydrochloric solution of sodium chloride (0.5 mL 5 M NaCl, 12.5 μL 5.5 M HCl) into the reaction vial, containing 40 μg DOTATOC and 0.5 mL 1 M ammonium acetate buffer pH 4.5. After heating for 7 min at 90°C, the reaction was finished. Radiochemical purity was higher than 95% without further purification. No (68)Ge breakthrough was found in the final product.

Germanium- and tellurium-doped GaAs for non-alloyed p-type and n-type ohmic contacts

NASA Astrophysics Data System (ADS)

Park, Joongseo; Barnes, Peter A.; Lovejoy, Michael L.

1995-08-01

Epitaxial ohmic contacts to GaAs were grown by liquid phase epitaxy. Heavily Ge-doped GaAs was grown to prepare ohmic contacts to p-GaAs while Te was used for the n-type contacts. Hall measurements were carried out for the samples grown from melts in which the mole fraction of Ge was varied between 1.55 atomic % and 52.2 atomic %, while the Te mole fractions varied between 0.03% and 0.5%. Specific contact resistance, rc, as low as rcp=2.9×10-6 ohm-cm 2 for Ge doping of p=(Na-Nd)=6.0×1019 holes/cm3 was measured for p-contacts and rcn=9.6×10-5 ohm-cm2 was measured for Te doping of n=(Nd-Na)=8.9×1018 electrons/cm3 for GaAs metallized with non-alloyed contacts of Ti/Al.

Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

NASA Astrophysics Data System (ADS)

You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

2018-02-01

In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

Effect of Dielectric Material Films on Crystallization Characteristics of Ge2Sb2Te5 Phase-Change Memory Film

NASA Astrophysics Data System (ADS)

Nishiuchi, Kenichi; Yamada, Noboru; Kawahara, Katsumi; Kojima, Rie

2007-11-01

Reduction of the film thickness of phase-change film and the adoption of GeN- or ZrO2-based dielectric films are both effective in achieving good thermal stability in phase-change optical disks. It was experimentally confirmed that, at a heating rate of 10 °C/min, the crystallization temperature Tx of the Ge2Sb2Te5 amorphous film when sandwiched by ZnS-SiO2 films markedly increases from 162 to 197 °C, while the thickness of the Ge2Sb2Te5 film decreases from 10 to 3 nm. Tx also slightly increases when ZnS-SiO2 films are substituted for GeN-based films (from 162 to 165 °C) and ZrO2-based films (from 162 to 167 °C). At the same time, the activation energy of crystallization is 2.4 eV for both GeN- and ZrO2-based films, and is higher than 2.2 eV for ZnS-SiO2 films.

76 FR 27282 - Airworthiness Directives; General Electric Company CF34-10E2A1; CF34-10E5, CF34-10E5A1; CF34-10E6...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-05-11

... methods: Federal eRulemaking Portal: Go to http://www.regulations.gov . Follow the instructions for... Investigation of a General Electric Company (GE) CF34-10E turbofan engine experiencing high fan frame vibrations... likely to exist or develop in other products of the same type design. Proposed AD Requirements This...

Pressure-Induced Phase Transitions in GeTe-Rich Ge-Sb-Te Alloys across the Rhombohedral-to-Cubic Transitions.

PubMed

Krbal, Milos; Bartak, Jaroslav; Kolar, Jakub; Prytuliak, Anastasiia; Kolobov, Alexander V; Fons, Paul; Bezacier, Lucile; Hanfland, Michael; Tominaga, Junji

2017-07-17

We demonstrate that pressure-induced amorphization in Ge-Sb-Te alloys across the ferroelectric-paraelectric transition can be represented as a mixture of coherently distorted rhombohedral Ge 8 Sb 2 Te 11 and randomly distorted cubic Ge 4 Sb 2 Te 7 and high-temperature Ge 8 Sb 2 Te 11 phases. While coherent distortion in Ge 8 Sb 2 Te 11 does not prevent the crystalline state from collapsing into its amorphous counterpart in a similar manner to pure GeTe, the pressure-amorphized Ge 8 Sb 2 Te 11 phase begins to revert to the crystalline cubic phase at ∼9 GPa in contrast to Ge 4 Sb 2 Te 7 , which remains amorphous under ambient conditions when gradually decompressed from 40 GPa. Moreover, experimentally, it was observed that pressure-induced amorphization in Ge 8 Sb 2 Te 11 is a temperature-dependent process. Ge 8 Sb 2 Te 11 transforms into the amorphous phase at ∼27.5 and 25.2 GPa at room temperature and 408 K, respectively, and completely amorphizes at 32 GPa at 408 K, while some crystalline texture could be seen until 38 GPa (the last measurement point) at room temperature. To understand the origins of the temperature dependence of the pressure-induced amorphization process, density functional theory calculations were performed for compositions along the (GeTe) x - (Sb 2 Te 3 ) 1-x tie line under large hydrostatic pressures. The calculated results agreed well with the experimental data.

Study of Collectivity in n-rich A=80 Nuclei using Radioactive Ion Beams

NASA Astrophysics Data System (ADS)

Padilla, E.; Galindo-Uribarri, A.; Baktash, C.; Fuentes, B.; Gross, C.; Mueller, P.; Radford, D. C.; Stracener, D.; Yu, C.-H.; Bijker, R.; Castanos, O.; Batchelder, J.; Hartley, D. J.

2002-04-01

We report on recent experiments performed at the HRIBF of Oak Ridge National Laboratory (ORNL) aimed to study neutron-rich nuclei in the A 80 mass region. First time use of Radioactive Ion Beams (RIBs) (78,80)Ge complemented with stable beam information allowed a systematic study of B(E2)-values that characterize the n-rich even-even Ge and Se isotopes. A comparison of the experimental results with IBA2 calculations will be presented. *Supported by US-DOE under the contract DE-AC05-00AOR22725.

Local structure of the crystalline and amorphous states of Ga2Te3 phase-change alloy without resonant bonding: A combined x-ray absorption and ab initio study

NASA Astrophysics Data System (ADS)

Kolobov, A. V.; Fons, P.; Krbal, M.; Mitrofanov, K.; Tominaga, J.; Uruga, T.

2017-02-01

Phase-change memories are usually associated with GeTe-Sb2Te3 quasibinary alloys, where the large optical contrast between the crystalline and amorphous phases is attributed to the formation of resonant bonds in the crystalline phase, which has a rocksalt-like structure. The recent findings that tetrahedrally bonded Ga2Te3 possesses a similarly large property contrast and very low thermal conductivity in the crystalline phase and undergoes low-energy switching [H. Zhu et al., Appl. Phys. Lett. 97, 083504 (2010), 10.1063/1.3483762; K. Kurosaki et al., Appl. Phys. Lett. 93, 012101 (2008), 10.1063/1.2940591] challenge the existing paradigm. In this work we report on the local structure of the crystalline and amorphous phases of Ga2Te3 obtained from x-ray absorption measurements and ab initio simulations. Based on the obtained results, a model of phase change in Ga2Te3 is proposed. We argue that efficient switching in Ga2Te3 is due to the presence of primary and secondary bonding in the crystalline phase originating from the high concentration of Ga vacancies, whereas the structural stability of both phases is ensured by polyvalency of Te atoms due to the presence of lone-pair electrons and the formation of like-atom bonds in the amorphous phase.

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

NASA Astrophysics Data System (ADS)

Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

2018-02-01

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

Atypical self-activation of Ga dopant for Ge nanowire devices.

PubMed

Zeiner, Clemens; Lugstein, Alois; Burchhart, Thomas; Pongratz, Peter; Connell, Justin G; Lauhon, Lincoln J; Bertagnolli, Emmerich

2011-08-10

In this Letter we report the atypical self-activation of gallium (Ga) implanted by focused ion beam (FIB) into germanium nanowires (Ge-NWs). By FIB implantation of 30 keV Ga(+) ions at room temperature, the Ge-NW conductivity increases up to 3 orders of magnitude with increasing ion fluence. Cu(3)Ge heterostructures were formed by diffusion to ensure well-defined contacts to the NW and enable two point I/V measurements. Additional four point measurements prove that the conductivity enhancement emerges from the modification of the wires themselves and not from contact property modifications. The Ga distribution in the implanted Ge-NWs was measured using atom probe tomography. For high ion fluences, and beginning amorphization of the NWs, the conductivity decreases exponentially. Temperature dependent conductivity measurements show strong evidence for an in situ doping of the Ge-NWs without any further annealing. Finally the feasibility of improving the device performance of top-gated Ge-NW MOSFETs by FIB implantation was shown.

Crystal Structure of Thioesterase SgcE10 Supporting Common Polyene Intermediates in 9- and 10-Membered Enediyne Core Biosynthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Annaval, Thibault; Rudolf, Jeffrey D.; Chang, Chin-Yuan

Enediynes are potent natural product anticancer antibiotics, and are classified as 9- or 10-membered according to the size of their enediyne core carbon skeleton. Both 9- and 10-membered enediyne cores are biosynthesized by the enediyne polyketide synthase (PKSE), thioesterase (TE), and PKSE-associated enzymes. Though the divergence between 9- and 10-membered enediyne core biosynthesis remains unclear, it has been observed that nascent polyketide intermediates, tethered to the acyl carrier protein (ACP) domain of PKSE, could be released by TE in the absence of the PKSE-associated enzymes. Here, we determined the crystal structure of SgcE10, the TE that participates in the biosynthesismore » of the 9-membered enediyne C-1027. Structural comparison of SgcE10 with CalE7 and DynE7, two TEs that participate in the biosynthesis of the 10-membered enediynes calicheamicin and dynemicin, respectively, revealed that they share a common α/β hot-dog fold. The amino acids involved in both substrate binding and catalysis are conserved among SgcE10, CalE7, and DynE7. The volume and the shape of the substrate-binding channel and active site in SgcE10, CalE7, and DynE7 confirm that TEs from both 9- and 10-membered enediyne biosynthetic machineries bind the linear form of similar ACP-tethered polyene intermediates. Taken together, our findings further support the proposal that the divergence between 9- and 10-membered enediyne core biosynthesis occurs beyond PKSE and TE catalysis.« less

Crystal Structure of Thioesterase SgcE10 Supporting Common Polyene Intermediates in 9- and 10-Membered Enediyne Core Biosynthesis

DOE PAGES

Annaval, Thibault; Rudolf, Jeffrey D.; Chang, Chin-Yuan; ...

2017-08-30

Enediynes are potent natural product anticancer antibiotics, and are classified as 9- or 10-membered according to the size of their enediyne core carbon skeleton. Both 9- and 10-membered enediyne cores are biosynthesized by the enediyne polyketide synthase (PKSE), thioesterase (TE), and PKSE-associated enzymes. Though the divergence between 9- and 10-membered enediyne core biosynthesis remains unclear, it has been observed that nascent polyketide intermediates, tethered to the acyl carrier protein (ACP) domain of PKSE, could be released by TE in the absence of the PKSE-associated enzymes. Here, we determined the crystal structure of SgcE10, the TE that participates in the biosynthesismore » of the 9-membered enediyne C-1027. Structural comparison of SgcE10 with CalE7 and DynE7, two TEs that participate in the biosynthesis of the 10-membered enediynes calicheamicin and dynemicin, respectively, revealed that they share a common α/β hot-dog fold. The amino acids involved in both substrate binding and catalysis are conserved among SgcE10, CalE7, and DynE7. The volume and the shape of the substrate-binding channel and active site in SgcE10, CalE7, and DynE7 confirm that TEs from both 9- and 10-membered enediyne biosynthetic machineries bind the linear form of similar ACP-tethered polyene intermediates. Taken together, our findings further support the proposal that the divergence between 9- and 10-membered enediyne core biosynthesis occurs beyond PKSE and TE catalysis.« less

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

NASA Technical Reports Server (NTRS)

Xing, G. C.; Bachmann, K. J.; Posthill, J. B.; Timmons, M. L.

1991-01-01

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Effect of midgap defect states on the optical properties of Ge20Se70Te10 nano colloids

NASA Astrophysics Data System (ADS)

Cheruvalath, Ajina; Sebastian, Indu; Sebastian, Mathew; Nampoori, V. P. N.; Thomas, Sheenu

2017-10-01

In this work, we report the linear and nonlinear optical studies on a pseudo binary chalcogenide glass of composition Ge20 Se70 Te10 in its nano colloidal form. The possibility of tuning the band gap, nonlinear refractive index and nonlinear absorption of the material by changing the glass loading in the colloid has been revealed. A red shift in the band edge along with an intermediate peak in the band tail due to defect states is observed with increasing concentration. Photoluminescence studies confirm the existence of intermediate defect states in the bandgap. Nonlinear properties analyzed with open and closed aperture z scan technique reveal that the nonlinear refraction enhances due to resonant effects as the band gap of the colloid gets near the one photon absorption edge. The nonlinear absorption is prominent in the concentrated sample due to the presence of defect states which acts as an intermediate level in two step photon absorption.

Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talochkin, A. B., E-mail: tal@isp.nsc.ru; Novosibirsk State University, Novosibirsk 630090; Chistokhin, I. B.

2016-04-07

Photoconductivity (PC) spectra of Si/Ge(GeSn)/Si structures with the ultra-thin (1.0–2.3 nm) Ge and GeSn alloy layers grown by the low-temperature (T = 100 °C) molecular beam epitaxy are studied. Photoresponse in the range of 1.2–0.4 eV related to light absorption in the buried Ge(GeSn) layer is observed. It is shown that in case of lateral PC, a simple diffusion model can be used to determine the absorption coefficient of this layer α ∼ 10{sup 5 }cm{sup −1}. This value is 100 times larger than that of a single Ge quantum dot layer and is reached significantly above the band gap of most bulk semiconductors. The observedmore » absorption is caused by optical transitions between electron and hole states localized at the interfaces. The anomalous high value of α can be explained by the unusual state of Ge(GeSn) layer with high concentration of dangling bonds, the optical properties of which have been predicted theoretically by Knief and von Niessen (Phys. Rev. B 59, 12940 (1999)).« less

First direct detection limits on sub-GeV dark matter from XENON10.

PubMed

Essig, Rouven; Manalaysay, Aaron; Mardon, Jeremy; Sorensen, Peter; Volansky, Tomer

2012-07-13

The first direct detection limits on dark matter in the MeV to GeV mass range are presented, using XENON10 data. Such light dark matter can scatter with electrons, causing ionization of atoms in a detector target material and leading to single- or few-electron events. We use 15  kg day of data acquired in 2006 to set limits on the dark-matter-electron scattering cross section. The strongest bound is obtained at 100 MeV where σ(e)<3×10(-38)  cm2 at 90% C.L., while dark-matter masses between 20 MeV and 1 GeV are bounded by σ(e)<10(-37)  cm2 at 90% C.L. This analysis provides a first proof of principle that direct detection experiments can be sensitive to dark-matter candidates with masses well below the GeV scale.

Microstructure and phase composition of hypoeutectic Te-Bi alloy as evaporation source for photoelectric cathode

NASA Astrophysics Data System (ADS)

Wang, Bao-guang; Yang, Wen-hui; Gao, Hong-ye; Tian, Wen-huai

2018-05-01

A hypoeutectic 60Te-40Bi alloy in mass percent was designed as a tellurium atom evaporation source instead of pure tellurium for an ultraviolet detection photocathode. The alloy was prepared by slow solidification at about 10-2 K·s-1. The microstructure, crystal structure, chemical composition, and crystallographic orientation of each phase in the as-prepared alloy were investigated by optical microscopy, scanning electron microscopy, X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. The experimental results suggest that the as-prepared 60Te-40Bi alloy consists of primary Bi2Te3 and eutectic Bi2Te3/Te phases. The primary Bi2Te3 phase has the characteristics of faceted growth. The eutectic Bi2Te3 phase is encased by the eutectic Te phase in the eutectic structure. The purity of the eutectic Te phase reaches 100wt% owing to the slow solidification. In the eutectic phases, the crystallographic orientation relationship between Bi2Te3 and Te is confirmed as {[0001]_{B{i_2}T{e_3}}}//{[1\\bar 21\\bar 3]_{Te}} and the direction of Te phase parallel to {[11\\bar 20]_{B{i_2}T{e_3}}} is deviated by 18° from Te N{(2\\bar 1\\bar 11)_{Te}}.

Rhombohedral to Cubic Conversion of GeTe via MnTe Alloying Leads to Ultralow Thermal Conductivity, Electronic Band Convergence, and High Thermoelectric Performance.

PubMed

Zheng, Zheng; Su, Xianli; Deng, Rigui; Stoumpos, Constantinos; Xie, Hongyao; Liu, Wei; Yan, Yonggao; Hao, Shiqiang; Uher, Ctirad; Wolverton, Chris; Kanatzidis, Mercouri G; Tang, Xinfeng

2018-02-21

In this study, a series of Ge 1-x Mn x Te (x = 0-0.21) compounds were prepared by a melting-quenching-annealing process combined with spark plasma sintering (SPS). The effect of alloying MnTe into GeTe on the structure and thermoelectric properties of Ge 1-x Mn x Te is profound. With increasing content of MnTe, the structure of the Ge 1-x Mn x Te compounds gradually changes from rhombohedral to cubic, and the known R3m to Fm-3m phase transition temperature of GeTe moves from 700 K closer to room temperature. First-principles density functional theory calculations show that alloying MnTe into GeTe decreases the energy difference between the light and heavy valence bands in both the R3m and Fm-3m structures, enhancing a multiband character of the valence band edge that increases the hole carrier effective mass. The effect of this band convergence is a significant enhancement in the carrier effective mass from 1.44 m 0 (GeTe) to 6.15 m 0 (Ge 0.85 Mn 0.15 Te). In addition, alloying with MnTe decreases the phonon relaxation time by enhancing alloy scattering, reduces the phonon velocity, and increases Ge vacancies all of which result in an ultralow lattice thermal conductivity of 0.13 W m -1 K -1 at 823 K. Subsequent doping of the Ge 0.9 Mn 0.1 Te compositions with Sb lowers the typical very high hole carrier concentration and brings it closer to its optimal value enhancing the power factor, which combined with the ultralow thermal conductivity yields a maximum ZT value of 1.61 at 823 K (for Ge 0.86 Mn 0.10 Sb 0.04 Te). The average ZT value of the compound over the temperature range 400-800 K is 1.09, making it the best GeTe-based thermoelectric material.

2 TeV HEB beam abort at the SSCL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schailey, R.; Bull, J.; Clayton, T.

1993-05-01

The High Energy Booster (HEB) of the Superconducting Super Collider Laboratory (SSCL) will require a full aperture beam abort over a dynamic energy range of 200 GeV to 2 TeV. Since the HEB is a bi-polar machine, both clockwise (CW) and the counter-clockwise (CCW) beam aborts are required. Also, the stored beam energy of 6.55 MJ in the superconducting HEB imposes upon the full aperture requirement. In this report, we describe the abort channels in the HEB utility straight sections, aperture restrictions, mechanical interferences and solutions, kicker misfires, and a 1 TeV beam absorber.

Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys

NASA Astrophysics Data System (ADS)

Vinod, E. M.; Ramesh, K.; Sangunni, K. S.

2015-01-01

Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl structure around 150°C and then to a stable hexagonal structure at high temperatures (>=250°C). It has been generally understood that the phase change takes place between amorphous and the metastable NaCl structure and not between the amorphous and the stable hexagonal phase. In the present work, it is observed that the thermally evaporated (GST)1-xSex thin films (0 <= x <= 0.50) crystallize directly to the stable hexagonal structure for x >= 0.10, when annealed at temperatures >= 150°C. The intermediate NaCl structure has been observed only for x < 0.10. Chemically ordered network of GST is largely modified for x >= 0.10. Resistance, thermal stability and threshold voltage of the films are found to increase with the increase of Se. The contrast in electrical resistivity between the amorphous and crystalline phases is about 6 orders of magnitude. The increase in Se shifts the absorption edge to lower wavelength and the band gap widens from 0.63 to 1.05 eV. Higher resistance ratio, higher crystallization temperature, direct transition to the stable phase indicate that (GST)1-xSex films are better candidates for phase change memory applications.

Hanbury-Brown and Twiss correlations between pion pairs from gold + gold collisions at 6, 8, and 10.8 GeV/u

NASA Astrophysics Data System (ADS)

Holzman, Burt

The E917 experiment studied Au+Au collisions at beam energies of 6, 8, and 10.8 GeV per nucleon at the Alternating Gradient Synchrotron at Brookhaven National Laboratory in New York. Hanbury-Brown and Twiss correlations between pion pairs were investigated in order to determine the spatiotemporal structure of the collision region which serves as the source for these produced particles. Three separate correlation analyses were carried out in this work. One-dimensional correlation radii and their dependence on beam energy are measured. No systematic trends with energy are observed, and the overall radius roughly corresponds to the geometric size of the collision zone. In a simple model, three-dimensional correlation radii which assume an azimuthally asymmetric source are determined at the full beam energy of 10.8 GeV/u. The radius transverse to the beam direction along the reaction plane is compared to the transverse radius orthogonal to the reaction plane. A small difference is observed between the two radii. In a state-of-the-art model, it is possible to determine the ``lengths of homogeneity'' of the collision zone without invoking the assumptions inherent in the simple model, six-dimensional correlation radii are determined at the full beam energy of 10.8 GeV/u, and consequently the in-plane length of homogeneity, out-of- plane length, longitudinal length, and emission duration of the source are determined. Additionally, the magnitude of the tilt of the collision region in the reaction plane is measured and found to be -31° +/- 32°. The measurement of the in-plane and out-of-plane homogeneity lengths is not sensitive enough to distinguish between an oblate or prolate source, but provides a blueprint for future statistics-rich analyses to follow.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

2010-04-01

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

Niobium tunnel junction fabrication using e-gun evaporation and SNAP

NASA Astrophysics Data System (ADS)

Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

1990-11-01

We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

Density functional simulations of Sb-rich GeSbTe phase change alloys.

PubMed

Gabardi, S; Caravati, S; Bernasconi, M; Parrinello, M

2012-09-26

We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge(1)Sb(1)Te(1) and Ge(2)Sb(4)Te(5). Comparison with previous results on the most studied Ge(2)Sb(2)Te(5) allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm(-1) are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge(2)Sb(2)Te(5). All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

Density functional simulations of Sb-rich GeSbTe phase change alloys

NASA Astrophysics Data System (ADS)

Gabardi, S.; Caravati, S.; Bernasconi, M.; Parrinello, M.

2012-09-01

We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge1Sb1Te1 and Ge2Sb4Te5. Comparison with previous results on the most studied Ge2Sb2Te5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm-1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge2Sb2Te5. All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

Study of the physical properties of Ge-S-Ga glassy alloy

NASA Astrophysics Data System (ADS)

Rana, Anjli; Sharma, Raman

2018-05-01

In the present work, we have studied the effect of Ga doping on the physical properties of Ge20S80-xGax glassy alloy. The basic physical parameters which have important role in determining the structure and strength of the material viz. average coordination number, lone-pair electrons, mean bond energy, glass transition temperature, electro negativity, probabilities for bond distribution and cohesive energy have been computed theoretically for Ge-S-Ga glassy alloy. Here, the glass transition temperature and mean bond energy have been investigated using the Tichy-Ticha approach. The cohesive energy has been calculated by using chemical bond approach (CBA) method. It has been found that while average coordination number increases, all the other parameters decrease with the increase in Ga content in Ge-S-Ga system.

Emission properties of Er3+-doped Ge20Ga5Sb10Se65 glasses in near- and mid-infrared

NASA Astrophysics Data System (ADS)

Yang, Zhen; Pan, Hongbo; Chen, Yimin; Wang, Rongping; Shen, Xiang

2018-03-01

In this work, we reported the fabrications and characterization of Er3+-doped Ge20Ga5Sb10Se65 glasses and glass-ceramics and measured their transmission and fluorescence spectra. The results showed that, the fluorecence intensity of the glasses increased until Er3+ concentration was up to ∼1.1 wt% Er, and then decreased with further increasing Er3+ concentration that was due to concentration quenching effect. While it was found that the mid- and far-infrared transmission did not decrease significantly in the glasses annealed at 310 °C for a duration up to 50 h, seven-folded enhancement in the intensity of mid-infrared fluorescence at 2.78 μm was observed. This demonstrated the potentials of the materials used for Er-doped amplifier and fiber laser.

Te homogeneous precipitation in Ge dislocation loop vicinity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perrin Toinin, J.; Portavoce, A., E-mail: alain.portavoce@im2np.fr; Texier, M.

2016-06-06

High resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te{sup 2+} or Te{sup 1+} ions.

Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

NASA Astrophysics Data System (ADS)

Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

2018-06-01

Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

DOEpatents

Skrabek, Emanuel Andrew; Trimmer, Donald Smith

1976-01-01

Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates

NASA Technical Reports Server (NTRS)

Xing, G. C.; Bachmann, Klaus J.

1993-01-01

The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.

Distortion of Local Atomic Structures in Amorphous Ge-Sb-Te Phase Change Materials

NASA Astrophysics Data System (ADS)

Hirata, A.; Ichitsubo, T.; Guan, P. F.; Fujita, T.; Chen, M. W.

2018-05-01

The local atomic structures of amorphous Ge-Sb-Te phase-change materials have yet to be clarified and the rapid crystal-amorphous phase change resulting in distinct optical contrast is not well understood. We report the direct observation of local atomic structures in amorphous Ge2Sb2Te5 using "local" reverse Monte Carlo modeling dedicated to an angstrom-beam electron diffraction analysis. The results corroborated the existence of local structures with rocksalt crystal-like topology that were greatly distorted compared to the crystal symmetry. This distortion resulted in the breaking of ideal octahedral atomic environments, thereby forming local disordered structures that basically satisfied the overall amorphous structure factor. The crystal-like distorted octahedral structures could be the main building blocks in the formation of the overall amorphous structure of Ge-Sb-Te.

Thermal, structural and optical properties of new TeO2sbnd Sb2O3sbnd GeO2 ternary glasses

NASA Astrophysics Data System (ADS)

Pereira, C.; Barbosa, J.; Cassanjes, F. C.; Gonçalves, R. R.; Ribeiro, S. J. L.; Poirier, G.

2016-12-01

In this work the novel glass system TeO2sbnd Sb2O3sbnd GeO2 was investigated and promising glass compositions were selected for further specific studies. Glass samples in the (80-0.8x)TeO2-(20-0.2x)Sb2O3-xGeO2 molar composition were prepared by the melt-quenching method with a glass-forming domain from x = 10 to x = 90. Samples were investigated by XRD, DSC, FTIR, Raman spectroscopy and UV-visible absorption. The XRD and DSC results bring informations about the non-crystalline state and thermal properties of these materials. It has been observed that higher GeO2 contents lead to higher glass transition temperatures and thermal stabilities against crystallization. FTIR and Raman spectroscopies suggest a progressive incorporation of GeO2 in the covalent network of TeO2 with conversion of structural units TeO4 to TeO3. Absorption spectra revealed the high visible transparency of these samples and an increase of the optical band gap with GeO2 addition, in agreement with a decreasing polarizability of the glass network. Er3+ doped and Er3+/Yb3+ codoped samples were also studied with respect to their infrared emission properties and higher GeO2 contents lead to an increase in IR emission intensity at 1,5 μm as well as longer radiative lifetimes. Finally, upconversion emission in the visible were also recorded and were shown to be strongly dependent of the composition.

Thermoelectric properties of Ge 1-xSn xTe crystals grown by vertical Bridgman method

NASA Astrophysics Data System (ADS)

Wu, C. C.; Ferng, N. J.; Gau, H. J.

2007-06-01

Single crystals of Ge 1-xSn xTe compounds with x=0, 0.8, 0.9 and 1.0 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, metallographic microscope as well as electron-probe microanalysis (EPMA). Electrical property of the as-grown samples was characterized using room temperature resistivity and Hall measurements. The thermoelectric behaviors for the Ge 1-xSn xTe crystals were studied by means of thermal and carrier transport measurements. Temperature dependences of resistivity, Seebeck coefficient and thermal conductivity for the various compositions of Ge 1-xSn xTe were analyzed. A two-valence band model was proposed to describe the temperature dependence of thermoelectric property of the Ge 1-xSn xTe crystals. The dimensionless thermoelectric figure of merit ZT for the alloys was evaluated and discussed.

Structural singularities in Ge(x)Te(100-x) films.

PubMed

Piarristeguy, A A; Micoulaut, M; Escalier, R; Jóvári, P; Kaban, I; van Eijk, J; Luckas, J; Ravindren, S; Boolchand, P; Pradel, A

2015-08-21

Structural and calorimetric investigation of Ge(x)Te(100-x) films over wide range of concentration 10 < x < 50 led to evidence two structural singularities at x ∼ 22 at. % and x ∼ 33-35 at. %. Analysis of bond distribution, bond variability, and glass thermal stability led to conclude to the origin of the first singularity being the flexible/rigid transition proposed in the framework of rigidity model and the origin of the second one being the disappearance of the undercooled region resulting in amorphous materials with statistical distributions of bonds. While the first singularity signs the onset of the Ge-Ge homopolar bonds, the second is related to compositions where enhanced Ge-Ge correlations at intermediate lengthscales (7.7 Å) are observed. These two threshold compositions correspond to recently reported resistance drift threshold compositions, an important support for models pointing the breaking of homopolar Ge-Ge bonds as the main phenomenon behind the ageing of phase change materials.

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

Beam-beam interaction study of medium energy eRHIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hao,Y.; Litvinenko, V. N.; Ptitsyn, V.

Medium Energy eRHIC (MeRHIC), the first stage design of eRHIC, includes a multi-pass ERL that provides 4GeV high quality electron beam to collide with the ion beam of RHIC. It delivers a minimum luminosity of 10{sup 32} cm{sup -2}s{sup -1}. Beam-beam effects present one of major factors limiting the luminosity of colliders. In this paper, both beam-beam effects on the electron beam and the proton beam in MeRHIC are investigated. The beam-beam interaction can induce a head-tail type instability of the proton beam referred to as the kink instability. Thus, beam stability conditions should be established to avoid proton beammore » loss. Also, the electron beam transverse disruption by collisions has to be evaluated to ensure that the beam quality is good enough for the energy recovery pass. The relation of proton beam stability, electron disruption and consequential luminosity are carried out after thorough discussion.« less

125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

2013-10-08

Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or “solute” atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb 1-xGe xTe and Pb 1-xSn xTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pbmore » neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400±150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.« less

Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2 buffer layers

NASA Astrophysics Data System (ADS)

Lord, R. J.; Su, P.-Y.; Bhat, I.; Zhang, S. B.; Lu, T.-M.; Wang, G.-C.

2015-09-01

Heteroepitaxial CdTe films were grown by metal organic chemical vapor deposition on glass substrates through nanostructured Ge/CaF2 buffer layers which were biaxially oriented. It allows us to explore the structural properties of multilayer biaxial semiconductor films which possess small angle grain boundaries and to test the principle of a solar cell made of such low-cost, low-growth-temperature semiconductor films. Through the x-ray diffraction and x-ray pole figure analysis, the heteroepitaxial relationships of the mutilayered films are determined as [111] in the out-of-plane direction and <1\\bar{1}0>CdTe//<1\\bar{1}0>Ge//{< \\bar{1}10> }{{{CaF}}2} in the in-plane direction. The I-V curves measured from an ITO/CdS/CdTe/Ge/CaF2/glass solar cell test structure shows a power conversion efficiency of ˜η = 1.26%, illustrating the initial success of such an approach. The observed non-ideal efficiency is believed to be due to a low shunt resistance and high series resistance as well as some residual large-angle grain boundary effects, leaving room for significant further improvement.

Peculiar atomic dynamics in liquid GeTe with asymmetrical bonding: Observation by inelastic x-ray scattering

NASA Astrophysics Data System (ADS)

Inui, M.; Koura, A.; Kajihara, Y.; Hosokawa, S.; Chiba, A.; Kimura, K.; Shimojo, F.; Tsutsui, S.; Baron, A. Q. R.

2018-05-01

Collective dynamics in liquid GeTe was investigated by inelastic x-ray scattering at 2 ≤Q ≤31 nm-1 . The dynamic structure factor shows clear inelastic excitations. The excitation energies at low Q disperse with increasing Q , consistent with the behavior of a longitudinal-acoustic excitation. The dispersion curve has a flat-topped region around the pseudo-Brillouin-zone boundary, similar to what is observed in liquid Bi [Inui et al., Phys. Rev. B 92, 054206 (2015), 10.1103/PhysRevB.92.054206]. The dynamic structure factor shows a low-frequency excitation, and its coupling with the longitudinal-acoustic mode plays an important role for a flat-topped dispersion. From these results, it is inferred that atomic dynamics in liquid GeTe is strongly affected by a Peierls distortion similar to liquid Bi. By comparing the momentum transfer dependence of the excitation energy and quasielastic linewidth to partial structure factors obtained by our own ab initio molecular dynamics simulation for liquid GeTe, the quasielastic and inelastic components were found to be correlated with Te-Te and Ge-(Ge,Te) partial structure factors, respectively.

Reduction of 68Ge activity containing liquid waste from 68Ga PET chemistry in nuclear medicine and radiopharmacy by solidification.

PubMed

de Blois, Erik; Chan, Ho Sze; Roy, Kamalika; Krenning, Eric P; Breeman, Wouter A P

PET with 68 Ga from the TiO 2 - or SnO 2 - based 68 Ge/ 68 Ga generators is of increasing interest for PET imaging in nuclear medicine. In general, radionuclidic purity ( 68 Ge vs. 68 Ga activity) of the eluate of these generators varies between 0.01 and 0.001%. Liquid waste containing low amounts of 68 Ge activity is produced by eluting the 68 Ge/ 68 Ga generators and residues from PET chemistry. Since clearance level of 68 Ge activity in waste may not exceed 10 Bq/g, as stated by European Directive 96/29/EURATOM, our purpose was to reduce 68 Ge activity in solution from >10 kBq/g to <10 Bq/g; which implies the solution can be discarded as regular waste. Most efficient method to reduce the 68 Ge activity is by sorption of TiO 2 or Fe 2 O 3 and subsequent centrifugation. The required 10 Bq per mL level of 68 Ge activity in waste was reached by Fe 2 O 3 logarithmically, whereas with TiO 2 asymptotically. The procedure with Fe 2 O 3 eliminates ≥90% of the 68 Ge activity per treatment. Eventually, to simplify the processing a recirculation system was used to investigate 68 Ge activity sorption on TiO 2 , Fe 2 O 3 or Zeolite. Zeolite was introduced for its high sorption at low pH, therefore 68 Ge activity containing waste could directly be used without further interventions. 68 Ge activity containing liquid waste at different HCl concentrations (0.05-1.0 M HCl), was recirculated at 1 mL/min. With Zeolite in the recirculation system, 68 Ge activity showed highest sorption.

Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

2015-04-24

One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as anmore » absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.« less

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation.

PubMed

Kumar, Ashish; Arafin, Shamsul; Amann, Markus Christian; Singh, Rajendra

2013-11-15

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measurements have been carried out to understand charge transport at low temperature. The modified activation energy plot from the barrier inhomogeneity model has given the value of 32.2 A/(cm2 K2) for the Richardson constant A** in the temperature range 200 to 380 K which is close to the known value of 26.4A/(cm2 K2) for n-type GaN.

Deformation twinning in Ni–Mn–Ga micropillars with 10M martensite

PubMed Central

Reinhold, M.; Kiener, D.; Knowlton, W. B.; Dehm, G.; Müllner, P.

2009-01-01

The maximum actuation frequency of magnetic shape-memory alloys (MSMAs) significantly increases with decreasing size of the transducer making MSMAs interesting candidates for small scale actuator applications. To study the mechanical properties of Ni–Mn–Ga single crystals on small length scales, two single-domain micropillars with dimensions of 10×15×30 μm3 were fabricated from a Ni–Mn–Ga monocrystal using dual beam focused ion beam machining. The pillars were oriented such that the crystallographic c direction was perpendicular to the loading direction. The pillars were compressed to maximum stresses of 350 and 50 MPa, respectively. Atomic force microscopy and magnetic force microscopy were performed prior to fabrication of the pillars and following the deformation experiments. Both micropillars were deformed by twinning as evidenced by the stress-strain curve. For one pillar, a permanent deformation of 3.6% was observed and ac twins (10M martensite) were identified after unloading. For the other pillar, only 0.7% remained upon unloading. No twins were found in this pillar after unloading. The recovery of deformation is discussed in the light of pseudoelastic twinning and twin-substrate interaction. The twinning stress was higher than in similar macroscopic material. However, further studies are needed to substantiate a size effect. PMID:19859577

Deformation twinning in Ni-Mn-Ga micropillars with 10M martensite.

PubMed

Reinhold, M; Kiener, D; Knowlton, W B; Dehm, G; Müllner, P

2009-09-01

The maximum actuation frequency of magnetic shape-memory alloys (MSMAs) significantly increases with decreasing size of the transducer making MSMAs interesting candidates for small scale actuator applications. To study the mechanical properties of Ni-Mn-Ga single crystals on small length scales, two single-domain micropillars with dimensions of 10x15x30 mum(3) were fabricated from a Ni-Mn-Ga monocrystal using dual beam focused ion beam machining. The pillars were oriented such that the crystallographic c direction was perpendicular to the loading direction. The pillars were compressed to maximum stresses of 350 and 50 MPa, respectively. Atomic force microscopy and magnetic force microscopy were performed prior to fabrication of the pillars and following the deformation experiments. Both micropillars were deformed by twinning as evidenced by the stress-strain curve. For one pillar, a permanent deformation of 3.6% was observed and ac twins (10M martensite) were identified after unloading. For the other pillar, only 0.7% remained upon unloading. No twins were found in this pillar after unloading. The recovery of deformation is discussed in the light of pseudoelastic twinning and twin-substrate interaction. The twinning stress was higher than in similar macroscopic material. However, further studies are needed to substantiate a size effect.

46 CFR 56.80-10 - Forming (reproduces 129.2).

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 2 2010-10-01 2010-10-01 false Forming (reproduces 129.2). 56.80-10 Section 56.80-10 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) MARINE ENGINEERING PIPING SYSTEMS AND APPURTENANCES Bending and Forming § 56.80-10 Forming (reproduces 129.2). (a) Piping components may be formed...

46 CFR 56.80-10 - Forming (reproduces 129.2).

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 2 2011-10-01 2011-10-01 false Forming (reproduces 129.2). 56.80-10 Section 56.80-10 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) MARINE ENGINEERING PIPING SYSTEMS AND APPURTENANCES Bending and Forming § 56.80-10 Forming (reproduces 129.2). (a) Piping components may be formed...

The First Fermi-LAT Catalog of Sources Above 10 GeV

NASA Technical Reports Server (NTRS)

Ackermann, M.; Ajello, M.; Allafort, A.; Atwood, W. B.; Baldini, L.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Bechtol, K.; Moiseev, Alexander A.

2013-01-01

We present a catalog of gamma-ray sources at energies above 10 GeV based on data from the Large Area Telescope (LAT) accumulated during the first 3 yr of the Fermi Gamma-ray Space Telescope mission. The first Fermi-LAT catalog of >10 GeV sources (1FHL) has 514 sources. For each source we present location, spectrum, a measure of variability, and associations with cataloged sources at other wavelengths. We found that 449 (87%) could be associated with known sources, of which 393 (76% of the 1FHL sources) are active galactic nuclei. Of the 27 sources associated with known pulsars, we find 20 (12) to have significant pulsations in the range >10 GeV (>25 GeV). In this work we also report that, at energies above 10 GeV, unresolved sources account for 27% +/- 8% of the isotropic ? -ray background, while the unresolved Galactic population contributes only at the few percent level to the Galactic diffuse background. We also highlight the subset of the 1FHL sources that are best candidates for detection at energies above 50-100 GeV with current and future ground-based ? -ray observatories.

Investigation of beam self-polarization in the future e+e- circular collider

NASA Astrophysics Data System (ADS)

Gianfelice-Wendt, E.

2016-10-01

The use of resonant depolarization has been suggested for precise beam energy measurements (better than 100 keV) in the e+e- Future Circular Collider (FCC-e+e-) for Z and W W physics at 45 and 80 GeV beam energy respectively. Longitudinal beam polarization would benefit the Z peak physics program; however it is not essential and therefore it will be not investigated here. In this paper the possibility of self-polarized leptons is considered. Preliminary results of simulations in presence of quadrupole misalignments and beam position monitors (BPMs) errors for a simplified FCC-e+e- ring are presented.

Electro-optical 1 x 2, 1 x N and N x N fiber-optic and free-space switching over 1.55 to 3.0 μm using a Ge-Ge(2)Sb(2)Te(5)-Ge prism structure.

PubMed

Hendrickson, Joshua; Soref, Richard; Sweet, Julian; Majumdar, Arka

2015-01-12

New device designs are proposed and theoretical simulations are performed on electro-optical routing switches in which light beams enter and exit the device either from free space or from lensed fibers. The active medium is a ~100 nm layer of phase change material (Ge(2)Sb(2)Te(5) or GeTe) that is electrically "triggered" to change its phase, giving "self-holding" behavior in each of two phases. Electrical current is supplied to that film by a pair of transparent highly doped conducting Ge prisms on both sides of the layer. For S-polarized light incident at ~80° on the film, a three-layer Fabry-Perot analysis, including dielectric loss, predicts good 1 x 2 and 2 x 2 switch performance at infrared wavelengths of 1.55, 2.1 and 3.0 μm, although the performance at 1.55 μm is degraded by material loss and prism mismatch. Proposals for in-plane and volumetric 1 x 4 and 4 x 4 switches are also presented. An unpolarized 1 x 2 switch projects good performance at mid infrared.

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uedono, Akira; Malinverni, Marco; Martin, Denis

Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5–0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 10{sup 19 }cm{sup −3}, vacancy-type defects were introduced starting at above [Mg] = 1 × 10{sup 20 }cm{sup −3}. The major defect species was identified as a complex between Ga vacancy (V{sub Ga}) and multiple nitrogen vacancies (V{sub N}s). The introduction of vacancy complexes was found to correlate with a decreasemore » in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.« less

Study of nanostructure and ethanol vapor sensing performance of WO3 thin films deposited by e-beam evaporation method under different deposition angles: application in breath analysis devices

NASA Astrophysics Data System (ADS)

Amani, E.; Khojier, K.; Zoriasatain, S.

2018-01-01

This paper studies the effect of deposition angle on the crystallographic structure, surface morphology, porosity and subsequently ethanol vapor sensing performance of e-beam-evaporated WO3 thin films. The WO3 thin films were deposited by e-beam evaporation technique on SiO2/Si substrates under different deposition angles (0°, 30°, and 60°) and then post-annealed at 500 °C with a flow of oxygen for 4 h. Crystallographic structure and surface morphology of the samples were checked using X-ray diffraction method and atomic force microscopy, respectively. Physical adsorption isotherm was also used to measure the porosity and effective surface area of the samples. The electrical response of the samples was studied to different concentrations of ethanol vapor (10-50 ppm) at the temperature range of 140-260 °C and relative humidity of 80%. The results reveal that the WO3 thin film deposited under 30° angle shows more sensitivity to ethanol vapor than the other samples prepared in this work due to the more crystallinity, porosity, and effective surface area. The investigations also show that the sample deposited at 30° can be a good candidate as a breath analysis device at the operating temperature of 240 °C because of its high response, low detection limit, and reliability at high relative humidity.

The first Fermi-LAT catalog of sources above 10 GeV

DOE PAGES

Ackermann, M.; Ajello, M.; Allafort, A.; ...

2013-11-14

Here, we present a catalog of γ-ray sources at energies above 10 GeV based on data from the Large Area Telescope (LAT) accumulated during the first 3 yr of the Fermi Gamma-ray Space Telescope mission. The first Fermi-LAT catalog of >10 GeV sources (1FHL) has 514 sources. For each source we present location, spectrum, a measure of variability, and associations with cataloged sources at other wavelengths. We found that 449 (87%) could be associated with known sources, of which 393 (76% of the 1FHL sources) are active galactic nuclei. Of the 27 sources associated with known pulsars, we find 20more » (12) to have significant pulsations in the range >10 GeV (>25 GeV). In this work we also report that, at energies above 10 GeV, unresolved sources account for 27% ± 8% of the isotropic γ-ray background, while the unresolved Galactic population contributes only at the few percent level to the Galactic diffuse background. We also highlight the subset of the 1FHL sources that are best candidates for detection at energies above 50-100 GeV with current and future ground-based γ-ray observatories.« less

Thermoelectric properties of heavily GaP- and P-doped Si0.95Ge0.05

NASA Astrophysics Data System (ADS)

Yamashita, Osamu

2001-06-01

The Seebeck coefficient S, the electrical resistivity ρ and the thermal conductivity κ of Si0.95Ge0.05 samples doped with 0.4 at. % P and/or 0.5-2.0 mol % GaP, which were prepared by a conventional arc melting method, were measured as functions of GaP content and temperature T in the range from 323 to 1208 K. When multidoped with P and GaP, Ga tends to segregate more strongly with Ge to the grain boundaries than P, while when doped with GaP alone, both P and Ga segregate equally strongly with Ge. For multidoped samples, the S values at 323 K have a minimum at 1.0 mol % GaP and then increase with additional GaP, while the values of ρ and κ decrease monotonically with increasing GaP content. The optimum additional content of GaP that gives the largest thermoelectric figures of merit (ZT=S2T/κρ) for multidoped n-type Si0.95Ge0.05 samples was 1.5 mol %, which is slightly less than the 2.0 mol % of GaP added to Si0.8Ge0.2 alloy by hot pressing. The ZT value for multidoped Si0.95Ge0.05 with an optimum content of GaP increases linearly with temperature, and at 1073 K is 18% higher than that obtained previously for Si0.95Ge0.05 doped with only 0.4 at. % P. At 1173 K the ZT value is 1.16, which corresponds to 95% of that obtained previously at the corresponding temperature for Si0.8Ge0.2 alloy doped with 2.0 mol % GaP.

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices.

PubMed

Kowalczyk, Philippe; Hippert, Françoise; Bernier, Nicolas; Mocuta, Cristian; Sabbione, Chiara; Batista-Pessoa, Walter; Noé, Pierre

2018-06-01

Van der Waals layered GeTe/Sb 2 Te 3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so-called interfacial phase-change memory (iPCM) devices. GeTe/Sb 2 Te 3 SLs are made by periodically stacking ultrathin GeTe and Sb 2 Te 3 crystalline layers. The mechanism of the resistance change in iPCM devices is still highly debated. Recent experimental studies on SLs grown by molecular beam epitaxy or pulsed laser deposition indicate that the local structure does not correspond to any of the previously proposed structural models. Here, a new insight is given into the complex structure of prototypical GeTe/Sb 2 Te 3 SLs deposited by magnetron sputtering, which is the used industrial technique for SL growth in iPCM devices. X-ray diffraction analysis shows that the structural quality of the SL depends critically on its stoichiometry. Moreover, high-angle annular dark-field-scanning transmission electron microscopy analysis of the local atomic order in a perfectly stoichiometric SL reveals the absence of GeTe layers, and that Ge atoms intermix with Sb atoms in, for instance, Ge 2 Sb 2 Te 5 blocks. This result shows that an alternative structural model is required to explain the origin of the electrical contrast and the nature of the resistive switching mechanism observed in iPCM devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface structures of L10-MnGa (001) by scanning tunneling microscopy and first-principles theory

NASA Astrophysics Data System (ADS)

Corbett, J. P.; Guerrero-Sanchez, J.; Richard, A. L.; Ingram, D. C.; Takeuchi, N.; Smith, A. R.

2017-11-01

We report on the surface reconstructions of L10-ordered MnGa (001) thin films grown by molecular beam epitaxy on a 50 nm Mn3N2 (001) layer freshly grown on a magnesium oxide (001) substrate. Scanning tunneling microscopy, Auger electron spectroscopy, and reflection high energy electron diffraction are combined with first-principles density functional theory calculations to determine the reconstructions of the L10-ordered MnGa (001) surface. We find two lowest energy reconstructions of the MnGa (001) face: a 1 × 1 Ga-terminated structure and a 1 × 2 structure with a Mn replacing a Ga in the 1 × 1 Ga-terminated surface. The 1 × 2 reconstruction forms a row structure along [100]. The manganese:gallium stoichiometry within the surface based on theoretical modeling is in good agreement with experiment. Magnetic moment calculations for the two lowest energy structures reveal important surface and bulk effects leading to oscillatory total magnetization for ultra-thin MnGa (001) films.

Structural and optical characteristics of GaAs films grown on Si/Ge substrates

NASA Astrophysics Data System (ADS)

Rykov, A. V.; Dorokhin, M. V.; Vergeles, P. S.; Baidus, N. V.; Kovalskiy, V. A.; Yakimov, E. B.; Soltanovich, O. A.

2018-03-01

A GaAs/AlAs heterostructure and a GaAs film grown on Si/Ge substrates have been fabricated and studied. A Ge buffer on a silicon substrate was fabricated using the MBE process. A3B5 films were grown by MOCVD at low pressures. Photoluminescence spectroscopy was used to define the optical quality of A3B5 films. Structural properties were investigated using the electron beam induced current method. It was established that despite a rather high density of dislocations on the epitaxial layers, the detected photoluminescence radiation of layers indicates the acceptable crystalline quality of the top GaAs layer.

Characteristics of SnO2-based 68Ge/68Ga generator and aspects of radiolabelling DOTA-peptides.

PubMed

de Blois, Erik; Sze Chan, Ho; Naidoo, Clive; Prince, Deidre; Krenning, Eric P; Breeman, Wouter A P

2011-02-01

PET scintigraphy with (68)Ga-labelled analogs is of increasing interest in Nuclear Medicine and performed all over the world. Here we report the characteristics of the eluate of SnO(2)-based (68)Ge/(68)Ga generators prepared by iThemba LABS (Somerset West, South Africa). Three purification and concentration techniques of the eluate for labelling DOTA-TATE and concordant SPE purifications were investigated. Characteristics of 4 SnO(2)-based generators (range 0.4-1 GBq (68)Ga in the eluate) and several concentration techniques of the eluate (HCl) were evaluated. The elution profiles of SnO(2)-based (68)Ge/(68)Ga generators were monitored, while [HCl] of the eluens was varied from 0.3-1.0 M. Metal ions and sterility of the eluate were determined by ICP. Fractionated elution and concentration of the (68)Ga eluate were performed using anion and cation exchange. Concentrated (68)Ga eluate, using all three concentration techniques, was used for labelling of DOTA-TATE. (68)Ga-DOTA-TATE-containing solution was purified and RNP increased by SPE, therefore also 11 commercially available SPE columns were investigated. The amount of elutable (68)Ga activity varies when the concentration of the eluens, HCl, was varied, while (68)Ge activity remains virtually constant. SnO(2)-based (68)Ge/(68)Ga generator elutes at 0.6 M HCl >100% of the (68)Ga activity at calibration time and ±75% after 300 days. Eluate at discharge was sterile and Endotoxins were <0.5 EU/mL, RNP was always <0.01%. Metal ions in the eluate were <10 ppm (in total). Highest desorption for anion purification was obtained with the 30 mg Oasis WAX column (>80%). Highest desorption for cation purification was obtained using a solution containing 90% acetone at increasing molarity of HCl, resulted in a (68)Ga desorption of 68±8%. With all (68)Ge/(68)Ga generators and for all 3 purification methods a SA up to 50 MBq/nmol with >95% incorporation (ITLC) and RCP (radiochemical purity) by HPLC ±90% could be achieved

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yakimov, E. B.; Yang, Jiancheng; Ren, F.; Yang, Gwangseok; Kim, Jihyun; Kuramata, A.; Pearton, S. J.

2018-01-01

Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

Investigation of beam self-polarization in the future e + e - circular collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gianfelice-Wendt, E.

The use of resonant depolarization has been suggested for precise beam energy measurements (better than 100 keV) in the e +e - Future Circular Collider (FCC-e +e -) for Z and WW physics at 45 and 80 GeV beam energy respectively. Longitudinal beam polarization would benefit the Z peak physics program; however it is not essential and therefore it will be not investigated here. In this paper the possibility of self-polarized leptons is considered. As a result, preliminary results of simulations in presence of quadrupole misalignments and beam position monitors (BPMs) errors for a simplified FCC-e +e - ring are presented.

Investigation of beam self-polarization in the future e + e - circular collider

DOE PAGES

Gianfelice-Wendt, E.

2016-10-24

The use of resonant depolarization has been suggested for precise beam energy measurements (better than 100 keV) in the e +e - Future Circular Collider (FCC-e +e -) for Z and WW physics at 45 and 80 GeV beam energy respectively. Longitudinal beam polarization would benefit the Z peak physics program; however it is not essential and therefore it will be not investigated here. In this paper the possibility of self-polarized leptons is considered. As a result, preliminary results of simulations in presence of quadrupole misalignments and beam position monitors (BPMs) errors for a simplified FCC-e +e - ring are presented.

Prediction for electronic, vibrational and thermoelectric properties of chalcopyrite AgX(X=In,Ga)Te2: PBE + U approach.

PubMed

Yang, Jianhui; Fan, Qiang; Cheng, Xinlu

2017-10-01

The electronic, vibrational and thermoelectric transport characteristics of AgInTe 2 and AgGaTe 2 with chalcopyrite structure have been investigated. The electronic structures are calculated using the density-functional theory within the generalized gradient approximation (GGA) of Perdew-Burke-Ernzerhof functional considering the Hubbard-U exchange correlation. The band-gaps of AgInTe 2 and AgGaTe 2 are much larger than previous standard GGA functional results and agree well with the existing experimental data. The effective mass of the hole and the shape of density of states near the edge of the valence band indicate AgInTe 2 and AgGaTe 2 are considerable p-type thermoelectric materials. An analysis of lattice dynamics shows the low thermal conductivities of AgInTe 2 and AgGaTe 2 . The thermoelectric transport properties' dependence on carrier concentration for p-type AgInTe 2 and AgGaTe 2 in a wide range of temperatures has been studied in detail. The results show that p-type AgInTe 2 and AgGaTe 2 at 800 K can achieve the merit values of 0.91 and 1.38 at about 2.12 × 10 20  cm -3 and 1.97 × 10 20  cm -3 carrier concentrations, respectively. This indicates p-type AgGaTe 2 is a potential thermoelectric material at high temperature.

Partial Pressures of Te2 and Thermodynamic Properties of Ga-Te System

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

2001-01-01

The partial pressures of Te2 in equilibrium with Ga(1-x)Te(x) samples were measured by optical absorption technique from 450 to 1100 C for compositions, x, between 0.333 and 0.612. To establish the relationship between the partial pressure of Te, and the measured optical absorbance, the calibration runs of a pure Te sample were also conducted to determine the Beer's Law constants. The partial pressures of Te2 in equilibrium with the GaTe(s) and Ga2Te3(s)compounds, or the so-called three-phase curves, were established. These partial pressure data imply the existence of the Ga3Te4(s) compound. From the partial pressures of Te2 over the Ga-Te melts, partial molar enthalpy and entropy of mixing for Te were derived and they agree reasonable well with the published data. The activities of Te in the Ga-Te melts were also derived from the measured partial pressures of Te2. These data agree well with most of the previous results. The possible reason for the high activity of Te measured for x less than 0.60 is discussed.

Investigations on the Local Structures and the Spin Hamiltonian Parameters for Cu2+ in (90-x)TeO2-10GeO2-xWO3 Glasses

NASA Astrophysics Data System (ADS)

Feng, Chun-Rong; Jian, Jun; Chen, Xiao-Hong; Du, Quan; Wang, Ling

2017-12-01

The local structures and the spin Hamiltonian parameters (SHPs) for Cu2+ in (90-x)TeO2-10GeO2-xWO3 glasses are theoretically investigated at various WO3 concentrations (x=7.5, 15, 22.5 and 30 mol%). Subject to the Jahn-Teller effect, the [CuO6]10- groups are found to experience the small or moderate tetragonal elongation distortions (characterised by the relative tetragonal elongation ratios ρ≈0.35-3.09%) in C4 axis. With only three adjusted coefficients a, b and ω, the relevant model parameters (Dq, k and ρ) are described by the Fourier type and linear functions, respectively, and the measured concentration dependences of the d-d transition bands and SHPs are reproduced. The maximum of g∥ and the minimum of |A∥| at x=15 mol% are illustrated from the abrupt decrease of the copper-oxygen electron cloud admixtures or covalency and the obvious decline of the copper 3d-3s (4s) orbital admixtures due to the decreasing electron cloud density around oxygen ligands spontaneously bonding with Cu2+ and Te4+ (W6+), respectively.

Strong constraints on sub-GeV dark sectors from SLAC beam dump E137.

PubMed

Batell, Brian; Essig, Rouven; Surujon, Ze'ev

2014-10-24

We present new constraints on sub-GeV dark matter and dark photons from the electron beam-dump experiment E137 conducted at SLAC in 1980-1982. Dark matter interacting with electrons (e.g., via a dark photon) could have been produced in the electron-target collisions and scattered off electrons in the E137 detector, producing the striking, zero-background signature of a high-energy electromagnetic shower that points back to the beam dump. E137 probes new and significant ranges of parameter space and constrains the well-motivated possibility that dark photons that decay to light dark-sector particles can explain the ∼3.6σ discrepancy between the measured and standard model value of the muon anomalous magnetic moment. It also restricts the parameter space in which the relic density of dark matter in these models is obtained from thermal freeze-out. E137 also convincingly demonstrates that (cosmic) backgrounds can be controlled and thus serves as a powerful proof of principle for future beam-dump searches for sub-GeV dark-sector particles scattering off electrons in the detector.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi.

PubMed

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-03-23

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge 20 Te 77 Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge 20 Te 77 Se₃) 100- x M x (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge 20 Te 77 Se₃) 100- x Bi x ( x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm -1 K -1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

High efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1977-01-01

Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

PubMed

Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

2017-11-29

The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition

NASA Astrophysics Data System (ADS)

France, Ryan; Xu, Tao; Chen, Papo; Chandrasekaran, R.; Moustakas, T. D.

2007-02-01

The authors report on the formation and evaluation of V-based Ohmic contacts to n-AlGaN films in the entire alloy composition. The films were produced by plasma assisted molecular beam epitaxy and doped n-type with Si. The conductivity of the films was determined to vary from 103to10-2(Ωcm )-1 as the AlN mole fraction increases from 0% to 100%. Ohmic contacts were formed by e-beam evaporation of V(15nm )/Al(80nm)/V(20nm)/Au(100nm). These contacts were rapid thermal annealed in N2 for 30s at various temperatures. The optimum annealing temperature for this contact scheme to n-GaN is about 650°C and increases monotonically to about 1000°C for 95%-100% AlN mole fraction. The specific contact resistivity was found to be about 10-6Ωcm2 for all films up to 70% AlN mole fraction and then increases to 0.1-1Ωcm2 for films from 95%-100% AlN mole fraction. These results were accounted for by hypothesizing that vanadium, upon annealing, interacts with the nitride film and forms vanadium nitride, which is consistent with reports that it is a metal with low work function.

Development of a HgCdTe photomixer and impedance matched GaAs FET amplifier

NASA Technical Reports Server (NTRS)

Shanley, J. F.; Paulauskas, W. A.; Taylor, D. R.

1982-01-01

A research program for the development of a 10.6 micron HgCdTe photodiode/GaAs field effect transistor amplifier package for use at cryogenic temperatures (77k). The photodiode/amplifier module achieved a noise equivalent power per unit bandwidth of 5.7 times 10 to the 20th power W/Hz at 2.0 GHz. The heterodyne sensitivity of the HgCdTe photodiode was improved by designing and building a low noise GaAs field effect transistor amplifier operating at 77K. The Johnson noise of the amplifier was reduced at 77K, and thus resulted in an increased photodiode heterodyne sensitivity.

Effect of Ga and P dopants on the thermoelectric properties of n-type SiGe

NASA Technical Reports Server (NTRS)

Draper, S. L.; Vandersande, J. W.; Wood, C.; Masters, R.; Raag, V.

1989-01-01

The purpose of this study was to hot-press improved n-type Si80Ge20/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three samples (Ga/P = 0.43) had an improvement in Z of about 20 percent between 400 and 1000 C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P = 0.33 and 0.50) had Z's equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample.

Ge K-Edge Extended X-Ray Absorption Fine Structure Study of the Local Structure of Amorphous GeTe and the Crystallization

NASA Astrophysics Data System (ADS)

Maeda, Yoshihito; Wakagi, Masatoshi

1991-01-01

The local structure and crystallization of amorphous GeTe (a-GeTe) were examined by means of Ge K-edge EXAFS. In a-GeTe, both Ge-Ge and Ge-Te bonds were observed to exist in nearest neighbors of Ge. The average coordination number around Ge is 3.7, which is close to the tetrahedral structure. A random covalent network (RCN) model seems to be suitable for the local Structure. After a-GeTe crystallizes at 129°C, the Ge-Ge bond disappears and the Ge-Te bond length increases considerably. As temperature rises, in a-GeTe the Debye-Waller factor of the Ge-Te bond increases greatly, while that of the Ge-Ge bond increases only slightly. At the crystallization, it is found that the fluctuation of the Ge-Te bond length plays a major role in the change of the local structure and bonding state around Ge.

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

NASA Astrophysics Data System (ADS)

Liu, Guangyu; Wu, Liangcai; Song, Zhitang; Liu, Yan; Li, Tao; Zhang, Sifan; Song, Sannian; Feng, Songlin

2017-12-01

A memory cell composed of a selector device and a storage device is the basic unit of phase change memory. The threshold switching effect, main principle of selectors, is a universal phenomenon in chalcogenide glasses. In this work, we put forward a safe and controllable method to prepare a SiGeAsTeN chalcogenide film by implanting As ions into sputtered SiGeTeN films. For the SiGeAsTeN material, the phase structure maintains the amorphous state, even at high temperature, indicating that no phase transition occurs for this chalcogenide-based material. The electrical test results show that the SiGeAsTeN-based devices exhibit good threshold switching characteristics and the switching voltage decreases with the increasing As content. The decrease in valence alternation pairs, reducing trap state density, may be the physical mechanism for lower switch-on voltage, which makes the SiGeAsTeN material more applicable in selector devices through component optimization.

10 CFR 110.80 - Basis for hearings.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 10 Energy 2 2010-01-01 2010-01-01 false Basis for hearings. 110.80 Section 110.80 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) EXPORT AND IMPORT OF NUCLEAR EQUIPMENT AND MATERIAL Public Participation Procedures Concerning License Applications § 110.80 Basis for hearings. The procedures in this part will...

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fireman, Micha N.; Browne, David A.; Speck, James S.

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditionsmore » that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.« less

Design and performance of a 4He-evaporator at <1.0 K

NASA Astrophysics Data System (ADS)

Das, N. K.; Pradhan, J.; Naser, Md. Z. A.; Roy, A.; Mandal, B. Ch.; Mallik, C.; Bhandari, R. K.

2012-12-01

A helium evaporator for obtaining 1 K temperature has been built and tested in laboratory. This will function primarily as the precooling stage for the circulating helium isotopic gas mixture. This works on evaporative cooling by way of pumping out the vapour from the top of the pot. A precision needle valve is used initially to fill up the pot and subsequently a permanent flow impedance maintains the helium flow from the bath into the pot to replenish the evaporative loss of helium. Considering the cooling power of 10 mW @1.0 K, a 99.0 cm3 helium evaporator was designed, fabricated from OFE copper and tested in the laboratory. A pumping station comprising of a roots pump backed by a dry pump was used for evacuation. The calibrated RuO thermometer and kapton film heater were used for measuring the temperature and cooling power of the system respectively. The continuously filled 1 K bath is tested in the laboratory and found to offer a temperature less than 1.0 K by withdrawing vapour from the evaporator. In order to minimize the heat load and to prevent film creep across the pumping tube, size optimization of the pumping line and pump-out port has been performed. The results of test run along with relevant analysis, mechanical fabrication of flow impedance are presented here.

High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

PubMed

Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

2010-10-29

Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

PubMed Central

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-01-01

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses. PMID:28772687

10 CFR 50.80 - Transfer of licenses.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 10 Energy 1 2010-01-01 2010-01-01 false Transfer of licenses. 50.80 Section 50.80 Energy NUCLEAR REGULATORY COMMISSION DOMESTIC LICENSING OF PRODUCTION AND UTILIZATION FACILITIES Transfers of Licenses-Creditors' Rights-Surrender of Licenses § 50.80 Transfer of licenses. (a) No license for a production or...

10 CFR 50.80 - Transfer of licenses.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 10 Energy 1 2011-01-01 2011-01-01 false Transfer of licenses. 50.80 Section 50.80 Energy NUCLEAR REGULATORY COMMISSION DOMESTIC LICENSING OF PRODUCTION AND UTILIZATION FACILITIES Transfers of Licenses-Creditors' Rights-Surrender of Licenses § 50.80 Transfer of licenses. (a) No license for a production or...

Fabrication and Characterization of novel W80Ni10Nb10 alloy produced by mechanical alloying

NASA Astrophysics Data System (ADS)

Saxena, R.; Patra, A.; Karak, S. K.; Pattanaik, A.; Mishra, S. C.

2016-02-01

Nanostructured tungsten (W) based alloy with nominal composition of W80Ni10Nb10 (in wt. %) was synthesized by mechanical alloying of elemental powders of tungsten (W), nickel (Ni), niobium (Nb) in a high energy planetary ball-mill for 20 h using chrome steel as grinding media and toluene as process control agent followed by compaction at 500 MPa pressure for 5 mins and sintering at 1500°C for 2 h in Ar atmosphere. The phase evolution and the microstructure of the milled powder and consolidated product were investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM). The crystallite size of W in W80Ni10Nb10 powder was reduced from 100 μm at 0 h to 45.6 nm at 10 h and 34.1 nm at 20 h of milling whereas lattice strain increases to 35% at 20 h of milling. The dislocation density shows sharp increase up to 5 h of milling and the rate of increase drops beyond 5 to 20 h of milling. The lattice parameter of tungsten in W80Ni10Nb10 expanded upto 0.04% at 10 h of milling and contracted upto 0.02% at 20 h of milling. The SEM micrograph revealed the presence of spherical and elongated particles in W80Ni10Nb10 powders at 20 h of milling. The particle size decreases from 100 μm to 2 μm with an increase in the milling time from 0 to 20 hours. The crystallite size of W in milled W80Ni10Nb10 alloy as evident from bright field TEM image was in well agreement with the measured crystallite size from XRD. Structure of W in 20 h milled W80Ni10Nb10 alloy was identified by indexing of selected area diffraction (SAD) pattern. Formation of NbNi intermetallic was evident from XRD pattern and SEM micrograph of sintered alloy. Maximum sinterability of 90.8% was achieved in 20 h milled sintered alloy. Hardness and wear study was also conducted to investigate the mechanical behaviour of the sintered product. Hardness of W80Ni10Nb10 alloy reduces with increasing load whereas wear rate increases with increasing load. The evaluated

High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madar, Naor; Givon, Tom; Mogilyansky, Dmitry

2016-07-21

In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressivemore » maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.« less

21 CFR 80.10 - Fees for certification services.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Fees for certification services. 80.10 Section 80.10 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL COLOR...) Method of payment. All deposits and fees required by this section shall be paid by money order, bank...

Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials

NASA Astrophysics Data System (ADS)

Adam, Adam Abdalla Elbashir; Cheng, Xiaomin; Abuelhassan, Hassan H.; Miao, Xiang Shui

2017-06-01

Phase-change materials (PCMs) are the most promising candidates to be used as an active media in the universal data storage and spintronic devices, due to their large differences in physical properties of the amorphous-crystalline phase transition behavior. In the present study, the microstructure, magnetic and electrical behaviors of Ge0.94Mn0.06Te thin film were investigated. The crystallographic structure of Ge0.94Mn0.06Te thin film was studied sing X-ray diffractometer (XRD) and High Resolution Transmission Electron Microscope (HR-TEM). The XRD pattern showed that the crystallization structure of the film was rhombohedral phase for GeTe with a preference (202) orientation. The HR-TEM image of the crystalline Ge0.94Mn0.06Te thin film demonstrated that, there were two large crystallites and small amorphous areas. The magnetization as a function of the magnetic field analyses of both amorphous and crystalline states showed the ferromagnetic hysteretic behaviors. Then, the hole carriers concentration of the film was measured and it found to be greater than 1021 cm-3 at room temperature. Moreover, the anomalous of Hall Effect (AHE) was clearly observed for the measuring temperatures 5, 10 and 50 K. The results demonstrated that the magnitude of AHE decreased when the temperature was increasing.

Positron beam study of indium tin oxide films on GaN

NASA Astrophysics Data System (ADS)

Cheung, C. K.; Wang, R. X.; Beling, C. D.; Djurisic, A. B.; Fung, S.

2007-02-01

Variable energy Doppler broadening spectroscopy has been used to study open-volume defects formed during the fabrication of indium tin oxide (ITO) thin films grown by electron-beam evaporation on n-GaN. The films were prepared at room temperature, 200 and 300 °C without oxygen and at 200 °C under different oxygen partial pressures. The results show that at elevated growth temperatures the ITO has fewer open volume sites and grows with a more crystalline structure. High temperature growth, however, is not sufficient in itself to remove open volume defects at the ITO/GaN interface. Growth under elevated temperature and under partial pressure of oxygen is found to further reduce the vacancy type defects associated with the ITO film, thus improving the quality of the film. Oxygen partial pressures of 6 × 10-3 mbar and above are found to remove open volume defects associated with the ITO/GaN interface. The study suggests that, irrespective of growth temperature and oxygen partial pressure, there is only one type of defect in the ITO responsible for trapping positrons, which we tentatively attribute to the oxygen vacancy.

Charge reconstruction of the DAMPE Silicon-Tungsten Tracker: A preliminary study with ion beams

NASA Astrophysics Data System (ADS)

Qiao, Rui; Peng, Wen-Xi; Guo, Dong-Ya; Zhao, Hao; Wang, Huan-Yu; Gong, Ke; Zhang, Fei; Wu, Xin; Azzarello, Phillip; Tykhonov, Andrii; Asfandiyarov, Ruslan; Gallo, Valentina; Ambrosi, Giovanni

2018-04-01

The DArk Matter Particle Explorer (DAMPE) is one of the four satellites within Strategic Pioneer Research Program in Space Science of the Chinese Academy of Science (CAS). DAMPE can detect electrons, photons in a wide energy range (5 GeV to 10 TeV) and ions up to iron (100 GeV to 100 TeV). The silicon-Tungsten Tracker (STK) is one of the four subdetectors in DAMPE, providing photon-electron conversion, track reconstruction and charge identification for ions. An ion beam test was carried out in CERN with 60 GeV/u Lead primary beams. Charge reconstruction and charge resolution of the STK detectors were investigated.

Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe 3 GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhuang, Houlong L.; Kent, P. R. C.; Hennig, Richard G.

Comore » mputationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe 3 GeTe 2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe 3 GeTe 2 is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe 3 GeTe 2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe 3 GeTe 2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe 3 GeTe 2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe 3 GeTe 2 is potentially useful for magnetic storage applications.« less

Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe 3 GeTe 2

DOE PAGES

Zhuang, Houlong L.; Kent, P. R. C.; Hennig, Richard G.

2016-04-06

Comore » mputationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe 3 GeTe 2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe 3 GeTe 2 is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe 3 GeTe 2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe 3 GeTe 2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe 3 GeTe 2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe 3 GeTe 2 is potentially useful for magnetic storage applications.« less

Numerical study of the defect adamantine compound CuGaGeSe4

NASA Astrophysics Data System (ADS)

Shen, Kesheng; Zhang, Xianzhou; Lu, Hai; Jiao, Zhaoyong

2018-06-01

The electronic structure, elastic and optical properties of the defect adamantine compound CuGaGeSe4 in ? structure are systematically investigated using first-principles calculations. Through detailed calculation and comparison, we obtain three independent atomic arrangements and predict the most stable atomic arrangement according to the lattice constants and enthalpy formation energies. The elastic constants are calculated, which can be used to predict the axial thermal expansion coefficients accurately. The optical properties of compound CuGaGeSe4, including the dielectric function, refractive index and absorption spectrum, are depicted for a more intuitive understanding. Our calculated zero-frequency limits ɛ1(0) and n(0) are very close to the other theoretical values, which proves that our calculations are reliable.

Monte Carlo simulations and benchmark measurements on the response of TE(TE) and Mg(Ar) ionization chambers in photon, electron and neutron beams

NASA Astrophysics Data System (ADS)

Lin, Yi-Chun; Huang, Tseng-Te; Liu, Yuan-Hao; Chen, Wei-Lin; Chen, Yen-Fu; Wu, Shu-Wei; Nievaart, Sander; Jiang, Shiang-Huei

2015-06-01

The paired ionization chambers (ICs) technique is commonly employed to determine neutron and photon doses in radiology or radiotherapy neutron beams, where neutron dose shows very strong dependence on the accuracy of accompanying high energy photon dose. During the dose derivation, it is an important issue to evaluate the photon and electron response functions of two commercially available ionization chambers, denoted as TE(TE) and Mg(Ar), used in our reactor based epithermal neutron beam. Nowadays, most perturbation corrections for accurate dose determination and many treatment planning systems are based on the Monte Carlo technique. We used general purposed Monte Carlo codes, MCNP5, EGSnrc, FLUKA or GEANT4 for benchmark verifications among them and carefully measured values for a precise estimation of chamber current from absorbed dose rate of cavity gas. Also, energy dependent response functions of two chambers were calculated in a parallel beam with mono-energies from 20 keV to 20 MeV photons and electrons by using the optimal simple spherical and detailed IC models. The measurements were performed in the well-defined (a) four primary M-80, M-100, M120 and M150 X-ray calibration fields, (b) primary 60Co calibration beam, (c) 6 MV and 10 MV photon, (d) 6 MeV and 18 MeV electron LINACs in hospital and (e) BNCT clinical trials neutron beam. For the TE(TE) chamber, all codes were almost identical over the whole photon energy range. In the Mg(Ar) chamber, MCNP5 showed lower response than other codes for photon energy region below 0.1 MeV and presented similar response above 0.2 MeV (agreed within 5% in the simple spherical model). With the increase of electron energy, the response difference between MCNP5 and other codes became larger in both chambers. Compared with the measured currents, MCNP5 had the difference from the measurement data within 5% for the 60Co, 6 MV, 10 MV, 6 MeV and 18 MeV LINACs beams. But for the Mg(Ar) chamber, the derivations reached 7

Phase change properties of Ge2Sb2Te5 compared to Ge4Sb1Te5 with respect to data storage applications

NASA Astrophysics Data System (ADS)

Friedrich, I.; Weidenhof, V.; Njoroge, W.; Franz, P.; Wuttig, M.

2000-03-01

To be able to adjust material properties to the demands of rewritable optical storage applications (high data density and transfer rates) we have investigated and compared the phase change characteristics of thin sputtered Ge2Sb2Te5- and Ge4Sb1Te5-films. Both crystallize into a rocksalt structure at 157C, and 150C, respectively. The material with the higher content of Ge shows a significantly higher activation energy (EA=3.7eV in comparison to EA=2.24eV), as confirmed by temperature dependent electrical measurements. This results in a larger incubation time for laser modification on the ns-scale. Ge2Sb2Te5 shows a second transition into a rather complex hexagonal structure at 310C (EA=3.64eV). The optical properties of both phases are slightly different. Laser modified areas are always in the first phase as confirmed by TEM and SAD. Hence there is a risk of a coexistence of two phases which would lead to an increase of the noise level in storage applications. This can be avoided by using a crystalline matrix with rocksalt structure. By capping the single phase change films with a thin dielectric layer the transition temperatures and activation energies are increasing for both materials, which might be attributed to changes of the tension state at the interface. footnotes the note goes between the ; number. set of curly braces; then put the associated URL in the set. The command may go anywhere in the abstract. the text in the first curly braces will show the printed version.

OBSERVATIONS OF HIGH-ENERGY COSMIC-RAY ELECTRONS FROM 30 GeV TO 3 TeV WITH EMULSION CHAMBERS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, T.; Komori, Y.; Yoshida, K.

2012-12-01

We have performed a series of cosmic-ray electron observations using balloon-borne emulsion chambers since 1968. While we previously reported the results from subsets of the exposures, the final results of the total exposures up to 2001 are presented here. Our successive experiments have yielded a total exposure of 8.19 m{sup 2} sr day at altitudes of 4.0-9.4 g cm{sup -2}. The performance of the emulsion chambers was examined by accelerator beam tests and Monte Carlo simulations, and the on-board calibrations were carried out by using the flight data. In this work, we present the cosmic-ray electron spectrum in the energymore » range from 30 GeV to 3 TeV at the top of the atmosphere, which is well represented by a power-law function with an index of -3.28 {+-} 0.10. The observed data can also be interpreted in terms of diffusive propagation models. The evidence of cosmic-ray electrons up to 3 TeV suggests the existence of cosmic-ray electron sources at distances within {approx}1 kpc and times within {approx}1 Multiplication-Sign 10{sup 5} yr ago.« less

Thermoelectric properties of p-type cubic and rhombohedral GeTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xing, Guangzong; Sun, Jifeng; Li, Yuwei

Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

Thermoelectric properties of p-type cubic and rhombohedral GeTe

DOE PAGES

Xing, Guangzong; Sun, Jifeng; Li, Yuwei; ...

2018-05-21

Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

Mesostructured Metal Germanium Sulfide and Selenide Materials Based on the Tetrahedral [Ge 4S 10] 4- and [Ge 4Se 10] 4- Units: Surfactant Templated Three-Dimensional Disordered Frameworks Perforated with Worm Holes

NASA Astrophysics Data System (ADS)

Wachhold, Michael; Kasthuri Rangan, K.; Lei, Ming; Thorpe, M. F.; Billinge, Simon J. L.; Petkov, Valeri; Heising, Joy; Kanatzidis, Mercouri G.

2000-06-01

The polymerization of [Ge4S10]4- and [Ge4Se10]4- unit clusters with the divalent metal ions Zn2+, Cd2+, Hg2+, Ni2+, and Co2+ in the presence of various surfactant cations leads to novel mesostructured phases. The surfactants are the quaternary ammonium salts C12H25NMe3Br, C14H29NMe3Br, C16H33NMe3Br, and C18H37NMe3Br, which play the role of templates, helping to assemble a three-dimensional mesostructured metal-germanium chalcogenide framework. These materials are stoichiometric in nature and have the formula of (R-NMe3)2[MGe4Q10] (Q=S, Se). The local atomic structure was probed by X-ray diffuse scattering and pair distribution function analysis methods and indicates that the adamantane clusters stay intact while the linking metal atoms possess a tetrahedral coordination environment. A model can be derived, from the comparison of measured and simulated X-ray powder diffraction patterns, describing the structure as an amorphous three-dimensional framework consisting of adamantane [Ge4Q10]4- units that are bridged by tetrahedral coordinated M2+ cations. The network structures used in the simulations were derived from corresponding disordered structures developed for amorphous silicon. The frameworks in (R-NMe3)2[MGe4Q10] are perforated with worm hole-like tunnels, occupied by the surfactant cations, which show no long-range order. This motif is supported by transmission electron microscopy images of these materials. The pore sizes of these channels were estimated to lie in the range of 20-30 Å, depending on the appointed surfactant cation length. The framework wall thickness of ca. 10 Å is thereby independent from the surfactant molecules used. Up to 80% of the surfactant molecules can be removed by thermal degradation under vacuum without loss of mesostructural integrity. Physical, chemical, and spectroscopic properties of these materials are discussed.

Electrodeposited CuGa(Se,Te)2 thin-film prepared from sulfate bath

NASA Astrophysics Data System (ADS)

Oda, Yusuke; Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro

2006-09-01

CuGa(Se,Te)2 (CGST) thin films were prepared on a soda-lime glass substrate sputter coated with molybdenum by electrodeposition. The aqueous solution which contained CuSO4-5H2O, Ga2(SO4)3-19.3H2O, H2SeO3, H6TeO6, Li2SO4 and gelatin was adjusted to pH 2.6 with dilute H2SO4 and NaOH. It has been observed that (i) a crack-less and smooth CGST film with a composition close to the stoichiometric ratio was deposited at -600 mV (vs. Ag/AgCl) when Te was hardly included in the film and (ii) cracks and products on the surface increased with increasing Te content in the film. Annealing at 600 °C for 10 min improved the crystallinity of the as-deposited films.

NH3-free growth of GaN nanostructure on n-Si (1 1 1) substrate using a conventional thermal evaporation technique

NASA Astrophysics Data System (ADS)

Saron, K. M. A.; Hashim, M. R.; Farrukh, M. A.

2012-06-01

We have investigated the influence of carrier gas on grown gallium nitride (GaN) epitaxial layers deposited on n-Si (1 1 1) by a physical vapour deposition (PVD) via thermal evaporation of GaN powder at 1150 °C. The GaN nanostructures were grown at a temperature of 1050 °C for 60 min under various gases (N2, H2 mixed with N2, and Ar2) with absence of NH3. The morphology, structure, and optical properties (SEM) images showed that the morphology of GaN displayed various shapes of nanostructured depending on the type of carrier gas. X-ray diffraction (XRD) pattern showed that the GaN polycrystalline reveals a wurtzite-hexagonal structure with [0 0 1] crystal orientation. Raman spectra exhibited a red shift in peaks of E2 (high) as a result of tensile stress. Photoluminescence (PL) measurements showed two band emissions aside from the UV emission. The ultraviolet band gap of GaN nanostructure displayed a red shift as compared with the bulk GaN; this might be attributed to an increase in the defect and stress present in the GaN nanostructure. In addition, the observed blue and green-yellow emissions indicated defects due to the N vacancy and C impurity of the supplied gas. These results clearly indicated that the carrier gas, similar to the growth temperature, is one of the important parameters to control the quality of thermal evaporation (TE)-GaN epilayers.

Sb7Te3/Ge multilayer films for low power and high speed phase-change memory

NASA Astrophysics Data System (ADS)

Chen, Shiyu; Wu, Weihua; Zhai, Jiwei; Song, Sannian; Song, Zhitang

2017-06-01

Phase-change memory has attracted enormous attention for its excellent properties as compared to flash memories due to their high speed, high density, better date retention and low power consumption. Here we present Sb7Te3/Ge multilayer films by using a magnetron sputtering method. The 10 years’ data retention temperature is significantly increased compared with pure Sb7Te3. When the annealing temperature is above 250 °C, the Sb7Te3/Ge multilayer thin films have better interface properties, which renders faster crystallization speed and high thermal stability. The decrease in density of ST/Ge multilayer films is only around 5%, which is very suitable for phase change materials. Moreover, the low RESET power benefits from high resistivity and better thermal stability in the PCM cells. This work demonstrates that the multilayer configuration thin films with tailored properties are beneficial for improving the stability and speed in phase change memory applications.

Structure and magnetic properties of L10-MnGa nanoparticles prepared using direct reactions between Mn nanoparticles and Ga

NASA Astrophysics Data System (ADS)

Si, P. Z.; Qian, H. D.; Park, J.; Ge, H. L.; Shinde, K. P.; Chung, K. C.; Choi, C. J.

2018-05-01

The tetragonal L10-Mn1+xGa (x<0.8) nanoparticles and bcc-Mn23Ga77 nanoparticles with large coercivity were prepared using direct reactions between Mn nanoparticles and Ga at elevated temperatures. The Mn23Ga77 phase was formed at ˜573 K while the L10-structured Mn1+xGa was formed at ˜850 K. After ball-milling, the L10-Mn1+xGa nanoparticles transformed into nano-flakes with enhanced coercivity. The size of the as-prepared Mn23Ga77 nanoparticles is comparable to that of the precursor Mn nanoparticles. An aggregation of the nanoparticles and thus a larger particle size were observed in the L10-Mn1+xGa nanoparticles obtained at 850 K. The size of the L10-Mn1+xGa nano-flakes is reduced to about 200-400 nm with a thickness of ˜20 nm. The coercivity of the Mn23Ga77 nanoparticles and the L10-Mn1+xGa nanoparticles at 300 K reached up to 0.2 T and 0.43 T, respectively. The coercivity of L10-Mn1+xGa ball-milled nano-flakes is 0.59 T at 300 K.

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge

NASA Astrophysics Data System (ADS)

Gibbon, J. T.; Jones, L.; Roberts, J. W.; Althobaiti, M.; Chalker, P. R.; Mitrovic, Ivona Z.; Dhanak, V. R.

2018-06-01

Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were determined to be 3.49± 0.08 eV and 3.47± 0.08 eV with Si(111) and Si(100) respectively and 3.51eV± 0.08 eV with Ge(100). Inverse photoemission spectroscopy (IPES) was used to investigate the conduction band of a thick Ga2O3 film and the band gap of the film was determined to be 4.63±0.14 eV. The conduction band offsets were found to be 0.03 eV and 0.05eV with Si(111) and Si(100) respectively, and 0.45eV with Ge(100). The results indicate that the heterojunctions of Ga2O3 with Si(100), Si(111) and Ge(100) are all type I heterojunctions.

A new quaternary semiconductor compound (Ba2Sb4GeS10): Ab initio study

NASA Astrophysics Data System (ADS)

Ozisik, Havva Bogaz; Ozisik, Haci; Deligoz, Engin

2017-03-01

The newly synthesised Ba2Sb4GeS10 compound is notable because of the interesting features of the quaternary Sb-containing materials. The first principle method has been used to determine the physical properties of this compound. In particular, the electronic structure has been analysed using both conventional GGA-PBE and HSE06 functional. The values of the band gap for PBE and HSE06 calculations were 1.324 and 1.84 eV, respectively. The calculated elastic constants were used to predict polycrystalline mechanical properties. The estimated Vickers hardness (2.7 GPa) values show that Ba2Sb4GeS10 is soft matter. Moreover, the vibrational properties of the compound have been studied. The calculation of the elastic constants and phonon dispersion curves indicates that the Ba2Sb4GeS10 compound is stable both mechanically and dynamically. Furthermore, the minimum thermal conductivity and optical properties, such as dielectric functions and energy loss function, have also been discussed in detail in this paper.

Interleukin-10-1082 G/a polymorphism and acute renal graft rejection: a meta-analysis.

PubMed

Hu, Qiongwen; Tian, Hua; Wu, Qing; Li, Jun; Cheng, Xiaocheng; Liao, Pu

2016-01-01

The aim of this study was to investigate the association between interleukin (IL)-10-1082 (G/A) promoter polymorphism and acute rejection (AR) in renal transplant recipients. We searched MEDLINE, EMBASE, Web of Science, and Cochrane Central Register from the inception to March 2015 for relevant studies. Data concerning publication information, population characteristics, and transplant information were extracted. Odds ratios (ORs) was calculated for the association between IL-10-1082 GG genotype (or IL-10-1082 G allele) and AR risk. This meta-analysis included 22 case-control studies including 2779 cases of renal transplant recipients. The pooled estimate showed that the IL-10-1082 GG genotype was not significantly associated with AR risk (ORrandom=1.07, 95% CI 0.80-1.43, p = 0.64). Similarly, the pooled estimate showed that the IL-10-1082 G allele was not significantly associated with AR risk (ORfixed=1.02, 95% CI 0.90-1.16, p = 0.74). None of subgroup analyses yielded significant results in the association between IL-10-1082 GG genotype (or IL-10-1082 G allele) and AR risk. Meta-regression confirmed that there was no significant correlation between the pre-selected trial characteristics and our study results. This meta-analysis suggests that IL-10-1082 G/A polymorphism is not significantly associated with AR risk in renal transplant recipients.

Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

NASA Astrophysics Data System (ADS)

Zhou, Xilin; Behera, Jitendra K.; Lv, Shilong; Wu, Liangcai; Song, Zhitang; Simpson, Robert E.

2017-09-01

By confining phase transitions to the nanoscale interface between two different crystals, interfacial phase change memory heterostructures represent the state of the art for energy efficient data storage. We present the effect of strain engineering on the electrical switching performance of the {{Sb}}2{{Te}}3-GeTe superlattice van der Waals devices. Multiple Ge atoms switching through a two-dimensional Te layer reduces the activation barrier for further atoms to switch; an effect that can be enhanced by biaxial strain. The out-of-plane phonon mode of the GeTe crystal remains active in the superlattice heterostructures. The large in-plane biaxial strain imposed by the {{Sb}}2{{Te}}3 layers on the GeTe layers substantially improves the switching speed, reset energy, and cyclability of the superlattice memory devices. Moreover, carefully controlling residual stress in the layers of {{Sb}}2{{Te}}3-GeTe interfacial phase change memories provides a new degree of freedom to design the properties of functional superlattice structures for memory and photonics applications.

Structural stability, dynamical stability, thermoelectric properties, and elastic properties of GeTe at high pressure

NASA Astrophysics Data System (ADS)

Kagdada, Hardik L.; Jha, Prafulla K.; Śpiewak, Piotr; Kurzydłowski, Krzysztof J.

2018-04-01

The stability of GeTe in rhombohedral (R 3 m ), face centred cubic (F m 3 m ), and simple cubic (P m 3 m ) phases has been studied using density functional perturbation theory. The rhombohedral phase of GeTe is dynamically stable at 0 GPa, while F m 3 m and P m 3 m phases are stable at 3.1 and 33 GPa, respectively. The pressure-dependent phonon modes are observed in F m 3 m and P m 3 m phases at Γ and M points, respectively. The electronic and the thermoelectric properties have been investigated for the stable phases of GeTe. The electronic band gap for rhombohedral and F m 3 m phases of GeTe has been observed as 0.66 and 0.17 eV, respectively, while the P m 3 m phase shows metallic behavior. We have used the Boltzmann transport equation under a rigid band approximation and constant relaxation time approximation as implemented in boltztrap code for the calculation of thermoelectric properties of GeTe. The metallic behavior of P m 3 m phase gives a very low value of Seebeck coefficient compared to the other two phases as a function of temperature and the chemical potential μ. It is observed that the rhombohedral phase of GeTe exhibits higher thermoelectric performance. Due to the metallic nature of P m 3 m phase, negligible thermoelectric performance is observed compared to R 3 m and F m 3 m -GeTe. The calculated lattice thermal conductivities are low for F m 3 m -GeTe and high for R 3 m -GeTe. At the relatively higher temperature of 1350 K, the figure of merit ZT is found to be 0.7 for rhombohedral GeTe. The elastic constants satisfy the Born stability criteria for all three phases. The rhombohedral and F m 3 m phases exhibits brittleness and the P m 3 m phase shows ductile nature.

Note: Design of transverse electron gun for electron beam based reactive evaporation system.

PubMed

Maiti, Namita; Barve, U D; Bhatia, M S; Das, A K

2011-05-01

In this paper design of a 10 kV, 10 kW transverse electron gun, suitable for reactive evaporation, supported by simulation and modeling, is presented. Simulation of the electron beam trajectory helps in locating the emergence aperture after 90° bend and also in designing the crucible on which the beam is finally incident after 270° bend. The dimension of emergence aperture plays a vital role in designing the differential pumping system between the gun chamber and the substrate chamber. Experimental validation is done for beam trajectory by piercing a stainless steel plate at 90° position which is kept above the crucible.

Structures and stability of metal-doped GenM (n = 9, 10) clusters

NASA Astrophysics Data System (ADS)

Qin, Wei; Lu, Wen-Cai; Xia, Lin-Hua; Zhao, Li-Zhen; Zang, Qing-Jun; Wang, C. Z.; Ho, K. M.

2015-06-01

The lowest-energy structures of neutral and cationic GenM (n = 9, 10; M = Si, Li, Mg, Al, Fe, Mn, Pb, Au, Ag, Yb, Pm and Dy) clusters were studied by genetic algorithm (GA) and first-principles calculations. The calculation results show that doping of the metal atoms and Si into Ge9 and Ge10 clusters is energetically favorable. Most of the metal-doped Ge cluster structures can be viewed as adding or substituting metal atom on the surface of the corresponding ground-state Gen clusters. However, the neutral and cationic FeGe9,10,MnGe9,10 and Ge10Al are cage-like with the metal atom encapsulated inside. Such cage-like transition metal doped Gen clusters are shown to have higher adsorption energy and thermal stability. Our calculation results suggest that Ge9,10Fe and Ge9Si would be used as building blocks in cluster-assembled nanomaterials because of their high stabilities.

Thermophysical and Optical Properties of Semiconducting Ga2Te3 Melt

NASA Technical Reports Server (NTRS)

Li, Chao; Su, Ching-Hua; Lehoczky, Sandor L.; Scripa, Rosalie N.; Ban, Heng

2005-01-01

The majority of bulk semiconductor single crystals are presently grown from their melts. The thermophysical and optical properties of the melts provide a fundamental understanding of the melt structure and can be used to optimize the growth conditions to obtain higher quality crystals. In this paper, we report several thermophysical and optical properties for Ga2Te3 melts, such as electrical conductivity, viscosity, and optical transmission for temperatures ranging from the melting point up to approximately 990 C. The conductivity and viscosity of the melts are determined using the transient torque technique. The optical transmission of the melts is measured between the wavelengths of 300 and 2000 nm by an dual beam reversed-optics spectrophotometer. The measured properties are in good agreement with the published data. The conductivities indicate that the Ga2Te3 melt is semiconductor-like. The anomalous behavior in the measured properties are used as an indication of a structural transformation in the Ga2Te3 melt and discussed in terms of Eyring's and Bachinskii's predicted behaviors for homogeneous melts.

In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells

NASA Astrophysics Data System (ADS)

Ghezzi, C.; Cioce, B.; Magnanini, R.; Parisini, A.

2001-11-01

Results are reported regarding in-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells. In the samples, which were grown by molecular beam epitaxy, only the central regions of the Al0.40Ga0.60Sb barriers were Te doped. Low-field, low-temperature Hall measurements in the dark demonstrated the presence in the GaSb wells of a degenerate electron gas with nonzero occupancy only for the lowest miniband. A positive persistent photoconductivity effect, related to the DX character of the Te impurity, was also observed. This behavior enabled the μ electron mobility to be measured at T=10 K as a function of the nS sheet carrier density. Since the experimental data were consistent with a dominant role of the interface roughness scattering in the limiting of μ, the height, Δ, and the lateral size, Λ, of the interface roughness were determined from the analysis of the μ=μ(nS) dependence. Acceptable values of Δ were obtained, consistent with results of structural investigations in single quantum well samples of GaSb/Al0.40Ga0.60Sb [E. Kh. Mukhamedzhanov, C. Bocchi, S. Franchi, A. Baraldi, R. Magnanini, and L. Nasi, J. Appl. Phys. 87, 4234 (2000)].

Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2016-10-01

The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

Framework 'interstitial' oxygen in La(10)(GeO(4))(5-)(GeO(5))O(2) apatite electrolyte.

PubMed

Pramana, Stevin S; Klooster, Wim T; White, T J

2007-08-01

Oxygen conduction at low temperatures in apatites make these materials potentially useful as electrolytes in solid-oxide fuel cells, but our understanding of the defect structures enabling ion migration is incomplete. While conduction along [001] channels is dominant, considerable inter-tunnel mobility has been recognized. Using neutron powder diffraction of stoichiometric 'La(10)(GeO(4))(6)O(3)', it has been shown that this compound is more correctly described as an La(10)(GeO(4))(5-)(GeO(5))O(2) apatite, in which high concentrations of interstitial oxygen reside within the channel walls. It is suggested that these framework interstitial O atoms provide a reservoir of ions that can migrate into the conducting channels of apatite, via a mechanism of inter-tunnel oxygen diffusion that transiently converts GeO(4) tetrahedra to GeO(5) distorted trigonal bipyramids. This structural modification is consistent with known crystal chemistry and may occur generally in oxide apatites.

Cu2ZnGeS4 thin films deposited by thermal evaporation: the impact of Ge concentration on physical properties

NASA Astrophysics Data System (ADS)

Courel, Maykel; Sanchez, T. G.; Mathews, N. R.; Mathew, X.

2018-03-01

In this work, the processing of Cu2ZnGeS4 (CZGS) thin films by a thermal evaporation technique starting from CuS, GeS and ZnS precursors, and post-deposition thermal processing, is discussed. Batches of films with GeS layers of varying thicknesses are deposited in order to study the role of Ge concentration on the structural, morphological, optical and electrical properties of CZGS films. The formation of the CZGS compound with a tetragonal phase and a kesterite structure is confirmed for all samples using XRD and Raman studies. An improvement in crystallite size for Ge-poor films is also observed in the XRD analysis, which is in good agreement with the grain size observed in the cross section SEM image. Furthermore, it is found that the band-gap of CZGS film can be tailored in the range of 2.0-2.23 eV by varying Ge concentration. A comprehensive electrical characterization is also performed which demonstrates that slightly Ge-poor samples are described by the lowest grain boundary defect densities and the highest photosensitivity and mobility values. A study of the work function of CZGS samples with different Ge concentrations is also presented. Finally, a theoretical evaluation is presented, considering, under ideal conditions, the possible impact of these films on device performance. Based on the characterization results, it is concluded that Ge-poor CZGS samples deposited by thermal evaporation present better physical properties for device applications.

202 km repeaterless transmission of 2 × 10 GE plus 2 × 1 GE channels over standard single mode fibre

NASA Astrophysics Data System (ADS)

Karásek, M.; Peterka, P.; Radil, Jan

2004-05-01

In this article, we present experimental results on transmission of two 10 gigabit ethernet channels (10 GE) plus two 1 gigabit ethernet channels (1 GE) over 202 km of standard single mode fibre (SSMF, ITU-T Recommendation G.652) without deployment of in-line amplifiers. Standard Cisco Catalyst 6503 line-cards with one 10 GE port and one 1 GE port in the 1550 nm, high power booster erbium-doped fibre amplifiers (EDFA) and low noise EDFA have been used in the experimental set-up. All the active components were placed either at the transmitter, or at the receiver side of the link. Group velocity dispersion (GVD) of the SSMF has been compensated by dispersion compensating fibre (DCF).

IR Li2Ga2GeS6 nanocrystallized GeS2-Ga2S3-Li2S electroconductive chalcogenide glass with good nonlinearity

PubMed Central

Liu, Qiming; Zhang, Peng

2014-01-01

GeS2-Ga2S3-Li2S electroconductive glasses were prepared by the conventional melt-quenching method through carefully controlling the heating rate. Comparing with the reference of glass-forming region, our investigated GeS2-Ga2S3-Li2S system was extended to the cation ratio of 0–20% Li with around 40% Ga. GeS2-Ga2S3-Li2S glass-ceramics containing IR Li2Ga2GeS6 nonlinear nanocrystals were obtained by the more carefully controlled heating rate. Its optical nonlinearity was investigated by the Maker fringe measurements, the maximum second harmonic intensity was observed to be 0.35 of the reference Z-cut quartz. IR Li2Ga2GeS6 nonlinear crystals were directly obtained at the composition of 40GeS2-30GaS1.5-30LiS0.5. PMID:25030713

Magnetic microstructure and magnetic properties of uniaxial itinerant ferromagnet Fe 3GeTe 2

DOE PAGES

León-Brito, Neliza; Bauer, Eric Dietzgen; Ronning, Filip; ...

2016-08-28

Here, magnetic force microscopy was used to observe the magnetic microstructure of Fe 3GeTe 2 at 4 K on the (001) surface. The surface magnetic structure consists of a two-phase domain branching pattern that is characteristic for highly uniaxial magnets in the plane perpendicular to the magnetic easy axis. The average surface magnetic domain width D s = 1.3 μm determined from this pattern, in combination with intrinsic properties calculated from bulk magnetization data (the saturation magnetization M s = 376 emu/cm 3 and the uniaxial magnetocrystalline anisotropy constant K u = 1.46 × 10 7 erg/cm 3), was usedmore » to determine the following micromagnetic parameters for Fe 3GeTe 2 from phenomenological models: the domain wall energy γ w = 4.7 erg/cm 2, the domain wall thickness δ w = 2.5 nm, the exchange stiffness constant A ex = 0.95 × 10 –7 erg/cm, the exchange length l ex = 2.3 nm, and the critical single domain particle diameter d c = 470 nm.« less

Electrical studies of Ge4Sb1Te5 devices for memory applications

NASA Astrophysics Data System (ADS)

Sangeetha, B. G.; Shylashree, N.

2018-05-01

In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

Demonstration of β-(Al x Ga1- x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun; Mates, Tom; Oshima, Yuichi; Mishra, Umesh K.; Speck, James S.

2017-07-01

β-(Al x Ga1- x )2O3/β-Ga2O3 heterostructures were grown via plasma-assisted molecular beam epitaxy. The β-(Al x Ga1- x )2O3 barrier was partially doped by Ge to achieve a two-dimensional electron gas (2DEG) in Ga2O3. The formation of the 2DEG was confirmed by capacitance-voltage measurements. The impact of Ga-polishing on both the surface morphology and the reduction of the unintentionally incorporated Si at the growth interface was investigated using atomic force microscopy and secondary-ion mass spectrometry. Modulation doped field-effect transistors were fabricated. A maximum current density of 20 mA/mm with a pinch-off voltage of -6 V was achieved on a sample with a 2DEG sheet charge density of 1.2 × 1013 cm-2.

Structural, mechanical and optical investigations in the TeO2-rich part of the TeO2-GeO2-ZnO ternary glass system

NASA Astrophysics Data System (ADS)

Ghribi, N.; Dutreilh-Colas, M.; Duclère, J.-R.; Gouraud, F.; Chotard, T.; Karray, R.; Kabadou, A.; Thomas, P.

2015-02-01

Stable glasses are successfully synthesized in the TeO2-GeO2-ZnO system at 850 °C by the melt-quenching method and the glass forming domain is determined in the TeO2-rich part of the diagram. The thermal study, carried out using differential scanning calorimetry, reveals that the glass transition temperature, as well as the thermal stability, increases with the addition of ZnO or GeO2. Bulk glass samples are elaborated within two series of compositions, corresponding to fixed concentrations in GeO2 (respectively 5 or 10 mol. %), and to various contents in ZnO. Structural changes caused by the ZnO addition are discussed based on Raman spectroscopy data. A progressive but very moderate network depolymerization is shown with increasing amount of ZnO. However, two different regimes can be identified, depending on the ZnO content. It is believed that ZnO acts as a network modifier for compositions below 20 mol. %, and starts to participate as a glass network former over such concentration. It is well evidenced that GeO2 contributes to the increase in Young's modulus E, evaluated from ultrasonic echography measurements. In addition, this oxide favors the network reticulation detected by the decrease of the Poisson ratio and the increase of the fractal bond connectivity. However, the role of ZnO is more complicated and will be extensively discussed. The decrease in the atomic packing density Cg probably explains the global evolution of E as a function of ZnO content. The refractive indices and optical band gap energies are extracted from UV-Visible-NIR optical transmission data. For the studied glasses, it is found that the transmission threshold decreases with larger ZnO contents, reflecting the increase in the optical band gap value. Refractive index is finally seen to decrease as a function of both ZnO and GeO2 contents. Such variation is explained by the decrease of the molar electronic polarizability, and by the lower optical basicity values known for TeO3 entities

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

NASA Astrophysics Data System (ADS)

Erdoğan, Erman; Kundakçı, Mutlu

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

Optical studies on electron beam evaporated Lithium Triborate films

NASA Astrophysics Data System (ADS)

Mohandoss, R.; Dhanuskodi, S.; Sanjeeviraja, C.

2012-10-01

Lithium triborate (LB3) has numerous applications in scintillator for neutron detection, laser weapon and communication. LB3 films have been prepared by electron beam evaporation technique under a pressure of 1 × 10-5 mbar on glass substrate at 323 K for 4 min. The crystallographic orientations and the lattice parameters (a = 8.55 (2); b = 5.09 (2); c = 7.39 (2) Å) were determined by powder XRD indicating the (1 1 1) preferential orientation of the film. The lower cut off wavelength at 325 nm with 75% transparency was measured from the UV-vis spectrum. The optical constants extinction coefficient (K), reflectance (R), the linear refractive index (1.34) and the optical energy band gap (˜4.0 eV) were estimated. The photoluminescence spectrum shows the emission peak in the visible region with low concentration of oxygen defects. LB3 is found to be second harmonic generation (SHG) active using a Q-switched Nd:YAG laser (1064 nm, 9 ns, 10 Hz). The nonlinear refractive index (n2 ˜ 10-16 cm2/W) and nonlinear absorption coefficient (β ˜ 10-2 cm/W) reveal (Z-scan technique) that the material has negative nonlinearity and self-focusing nature.

Optical studies on electron beam evaporated lithium triborate films.

PubMed

Mohandoss, R; Dhanuskodi, S; Sanjeeviraja, C

2012-10-01

Lithium triborate (LB3) has numerous applications in scintillator for neutron detection, laser weapon and communication. LB3 films have been prepared by electron beam evaporation technique under a pressure of 1×10(-5) mbar on glass substrate at 323 K for 4 min. The crystallographic orientations and the lattice parameters (a=8.55 (2); b=5.09 (2); c=7.39 (2)Å) were determined by powder XRD indicating the (111) preferential orientation of the film. The lower cut off wavelength at 325 nm with 75% transparency was measured from the UV-vis spectrum. The optical constants extinction coefficient (K), reflectance (R), the linear refractive index (1.34) and the optical energy band gap (~4.0 eV) were estimated. The photoluminescence spectrum shows the emission peak in the visible region with low concentration of oxygen defects. LB3 is found to be second harmonic generation (SHG) active using a Q-switched Nd:YAG laser (1064 nm, 9 ns, 10 Hz). The nonlinear refractive index (n(2)~10(-16) cm(2)/W) and nonlinear absorption coefficient (β~10(-2) cm/W) reveal (Z-scan technique) that the material has negative nonlinearity and self-focusing nature. Copyright © 2012 Elsevier B.V. All rights reserved.

Comparison of Total Evaporation (TE) and Direct Total Evaporation (DTE) methods in TIMS by using NBL CRMs

NASA Astrophysics Data System (ADS)

Hasözbek, Altug; Mathew, Kattathu; Wegener, Michael

2013-04-01

The total evaporation (TE) is a well-established analytical method for safeguards measurement of uranium and plutonium isotope-amount ratios using the thermal ionization mass spectrometry (TIMS). High accuracy and precision isotopic measurements find many applications in nuclear safeguards, for e.g. assay measurements using isotope dilution mass spectrometry. To achieve high accuracy and precision in TIMS measurements, mass dependent fractionation effects are minimized by either the measurement technique or changes in the hardware components that are used to control sample heating and evaporation process. At NBL, direct total evaporation (DTE) method on the modified MAT261 instrument, uses the data system to read the ion signal intensity and its difference from a pre-determined target intensity, is used to control the incremental step at which the evaporation filament is heated. The feedback and control is achieved by proprietary hardware from SPECTROMAT that uses an analog regulator in the filament power supply with direct feedback of the detector intensity. Compared to traditional TE method on this instrument, DTE provides better precision (relative standard deviation, expressed as a percent) and accuracy (relative difference, expressed as a percent) of 0.05 to 0.08 % for low enriched and high enriched NBL uranium certified reference materials.

Primordial Black Holes: Observational characteristics of the final evaporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ukwatta, T. N.; Stump, D. R.; Linnemann, J. T.

For many early universe theories predict the creation of Primordial Black Holes (PBHs). PBHs could have masses ranging from the Planck mass to 105 solar masses or higher depending on the size of the universe at formation. A Black Hole (BH) has a Hawking temperature which is inversely proportional to its mass. Hence a sufficiently small BH will quasi-thermally radiate particles at an ever-increasing rate as emission lowers its mass and raises its temperature. Moreover, the final moments of this evaporation phase should be explosive and its description is dependent on the particle physics model. In this work we investigatemore » the final few seconds of BH evaporation, using the Standard Model and incorporating the most recent Large Hadron Collider (LHC) results, and provide a new parameterization for the instantaneous emission spectrum. We calculate for the first time energy-dependent PBH burst light curves in the GeV/TeV energy range. Moreover, we explore PBH burst search methods and potential observational PBH burst signatures. We have found a unique signature in the PBH burst light curves that may be detectable by GeV/TeV gamma-ray observatories such as the High Altitude Water Cerenkov (HAWC) observatory. Finally, the implications of beyond the Standard Model theories on the PBH burst observational characteristics are also discussed, including potential sensitivity of the instantaneous photon detection rate to a squark threshold in the 5–10 TeV range.« less

Primordial Black Holes: Observational characteristics of the final evaporation

DOE PAGES

Ukwatta, T. N.; Stump, D. R.; Linnemann, J. T.; ...

2016-07-01

For many early universe theories predict the creation of Primordial Black Holes (PBHs). PBHs could have masses ranging from the Planck mass to 105 solar masses or higher depending on the size of the universe at formation. A Black Hole (BH) has a Hawking temperature which is inversely proportional to its mass. Hence a sufficiently small BH will quasi-thermally radiate particles at an ever-increasing rate as emission lowers its mass and raises its temperature. Moreover, the final moments of this evaporation phase should be explosive and its description is dependent on the particle physics model. In this work we investigatemore » the final few seconds of BH evaporation, using the Standard Model and incorporating the most recent Large Hadron Collider (LHC) results, and provide a new parameterization for the instantaneous emission spectrum. We calculate for the first time energy-dependent PBH burst light curves in the GeV/TeV energy range. Moreover, we explore PBH burst search methods and potential observational PBH burst signatures. We have found a unique signature in the PBH burst light curves that may be detectable by GeV/TeV gamma-ray observatories such as the High Altitude Water Cerenkov (HAWC) observatory. Finally, the implications of beyond the Standard Model theories on the PBH burst observational characteristics are also discussed, including potential sensitivity of the instantaneous photon detection rate to a squark threshold in the 5–10 TeV range.« less

Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Craig, A. P.; Percy, B.; Marshall, A. R. J.

2015-05-18

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

Synthesis of nanocrystalline ZnO thin films by electron beam evaporation

NASA Astrophysics Data System (ADS)

Kondkar, V.; Rukade, D.; Bhattacharyya, V.

2018-05-01

Nanocrystalline ZnO thin films have potential for applications in variety of optoelectronic devices. In the present study, nanocrystalline thin films of ZnO are grown on fused silica substrate using electron beam (e-beam) evaporation technique. Phase identification is carried out using Glancing angle X-ray diffraction (GAXRD) and Raman spectroscopy. Ultraviolet-Visible (UV-Vis) spectroscopic analysis is carried out to calculate energy band gap of the ZnO film. Surface morphology of the film is investigated using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). Highly quality nanocrystalline thin films of hexagonal wurtzite ZnO are synthesized using e-beam evaporation technique.

Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET

DTIC Science & Technology

2011-10-01

explored the use of in situ deposition of Al2O3 on GaSb grown on InP using molecular beam epitaxy and reported Dit values in the low 1012/cm2eV range near...M. Heyns, M. Caymax, and J. Dekoster, “GaSb mole- cular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide...transmission electron microscopy. Capacitors were made on these films using platinum (Pt) electrode deposited in an e- beam evaporator through a shadow

The 76Ge(n,p)76Ga reaction and its relevance to searches for the neutrino-less double-beta decay of 76Ge

NASA Astrophysics Data System (ADS)

Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan, Fnu

2015-10-01

The 76Ge(n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.9 keV state of 76Ge, which decays by emission of a 2040.7 keV γ ray. Using HPGe detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrino-less double-beta decay of 76Ge with its Q-value of 2039.0 keV. In the neutron energy range between 10 and 20 MeV the production cross section of the 2040.7 keV γ ray is approximately 0.1 mb. In the same experiment γ rays of energy 2037.9 keV resulting from the 76Ge(n, γ)77Ge reaction were clearly observed. Adding the 76Ge(n,n' γ)76Ge reaction, which also produces the 2040.7 keV γ ray with a cross section value of the order of 0.1 mb clearly shows that great care has to be taken to eliminate neutron-induced backgrounds in searches for neutrino-less double-beta decay of 76Ge. This work was supported by the U.S. DOE under Grant NO. DE-FG02-97ER41033.

Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Hong-Ming; Ho, Hao-I; Tsai, Shi-Jane

2016-03-21

We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for themore » deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms.« less

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Influence of GaAs substrate properties on the congruent evaporation temperature

NASA Astrophysics Data System (ADS)

Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

2018-03-01

High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

The primary cosmic ray electron spectrum from 10 GeV to about 200 GeV

NASA Technical Reports Server (NTRS)

Silverberg, R. F.; Ormes, J. F.; Balasubrahmanyan, V. K.; Ryan, M. J.

1971-01-01

An ionization spectrometer consisting of 10.8 radiation lengths of tungsten and 35 radiation lengths of iron has been used to determine the energy spectrum of cosmic ray electrons above 10 GeV. The spectrometer was calibrated with electrons from 5.4 to 18 GeV and then flown at an altitude of 6 gm-cm/2 for 16 hours. Separation of electron initiated events from proton events was achieved by utilizing starting point distributions, the shower development in tungsten, and the energy deposited in the large thickness of iron absorber. The exponent of the differential energy spectrum of the electrons is -3.1 + or - 0.2 while the exponent of the background is consistent with the proton exponent of -2.7 + or -0.2.

Exposure of nuclear track emulsion to a mixed beam of relativistic {sup 12}N, {sup 10}C, and {sup 7}Be nuclei

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kattabekov, R. R.; Mamatkulov, K. Z.; Artemenkov, D. A.

2010-12-15

A nuclear track emulsion was exposed to a mixed beam of relativistic {sup 12}N, {sup 10}C, and {sup 7}Be nuclei having a momentum of 2 GeV/c per nucleon. The beam was formed upon charge exchange processes involving {sup 12}C primary nuclei and their fragmentation. An analysis indicates that {sup 10}C nuclei are dominant in the beam and that {sup 12}N nuclei are present in it. The charge topology of relativistic fragments in the coherent dissociation of these nuclei is presented.

Study on the Lattice Dynamics of the Argyrodite Ag8GeTe6

NASA Astrophysics Data System (ADS)

Hitchcock, Dale; Thompson, Emily; He, Jian; Bredesen, Isaac; Keppends, Veelre; Mandrus, David

2014-03-01

Ag8GeTe6 was initially studied as a super ionic-electronic mixed conductor in the 1970s, and more recently has attracted new interest for its thermoelectric performance. A key to the desirable thermoelectric performance of Ag8GeTe6 is its exceptionally low lattice thermal conductivity (~ 0.25W/m*K at 300K), which is intimately related to its structure, consecutive structural instabilities, and unusual lattice dynamics (e.g., anharmonicity). In this work, we have studied Ag8GeTe6 by means of thermal conductivity, electrical conductivity, Seebeck coefficient, Hall coefficient, magnetic susceptibility, resonant ultrasound spectroscopy (RUS), photoacoustic spectroscopy, and synchrotron x-ray diffraction at low temperatures in order to further understand the coexistence of mixed conduction and high thermoelectric performance at elevated temperatures. This work is supported by NSF DMR 1307740.

Effects of Ge replacement in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration modified by local electron imbalance

NASA Astrophysics Data System (ADS)

Levin, E. M.; Howard, A.; Straszheim, W. E.

2015-03-01

XRD, SEM, EDS, 125Te NMR, Seebeck coefficient, and electrical resistivity of AgxGe50-xTe50 and SbxGe50-xTe50 alloys have been studied. Replacement of Ge in GeTe by Sb significantly increases the Seebeck coefficient, while replacement by Ag decreases it. These effects can be attributed to a change in carrier concentration observed via 125Te NMR spin-lattice relaxation measurements and NMR signal position, which mostly depends on the Knight shift. Variation in carrier concentration in AgxGe50-xTe50 and SbxGe50-xTe50 can be attributed to different electron configurations of valence electrons of Ag (4d105s1) and Sb (5s25p3) compared to that of Ge (4s24p2) resulting in local electron imbalances and changing the concentration of charge carrier (holes) generated by Ge vacancies. In contrast, our 125Te NMR and Seebeck coefficient data for Ag2Sb2Ge46Te50 are similar to those observed for GeTe. This shows that effects from Ag and Sb compensate each other and indicates the existence of [Ag +Sb] pairs. The effects of Ge replacement in GeTe by Ag, Sb, or [Ag +Sb] on rhombohedral lattice distortion also have been analyzed. Interplay between the Seebeck coefficient and electrical resistivity in these alloys results in variation of power factor; the value of 45 mW/cm K2, the highest among known tellurides, was found for Sb2Ge48Te50.

ReGaTE: Registration of Galaxy Tools in Elixir

PubMed Central

Mareuil, Fabien; Deveaud, Eric; Kalaš, Matúš; Soranzo, Nicola; van den Beek, Marius; Grüning, Björn; Ison, Jon; Ménager, Hervé

2017-01-01

Abstract Background: Bioinformaticians routinely use multiple software tools and data sources in their day-to-day work and have been guided in their choices by a number of cataloguing initiatives. The ELIXIR Tools and Data Services Registry (bio.tools) aims to provide a central information point, independent of any specific scientific scope within bioinformatics or technological implementation. Meanwhile, efforts to integrate bioinformatics software in workbench and workflow environments have accelerated to enable the design, automation, and reproducibility of bioinformatics experiments. One such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date, no convenient mechanism to register such services en masse. Findings: We present ReGaTE (Registration of Galaxy Tools in Elixir), a software utility that automates the process of registering the services available in a Galaxy instance. This utility uses the BioBlend application program interface to extract service metadata from a Galaxy server, enhance the metadata with the scientific information required by bio.tools, and push it to the registry. Conclusions: ReGaTE provides a fast and convenient way to publish Galaxy services in bio.tools. By doing so, service providers may increase the visibility of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE. PMID:28402416

ReGaTE: Registration of Galaxy Tools in Elixir.

PubMed

Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric; Kalaš, Matúš; Soranzo, Nicola; van den Beek, Marius; Grüning, Björn; Ison, Jon; Ménager, Hervé

2017-06-01

Bioinformaticians routinely use multiple software tools and data sources in their day-to-day work and have been guided in their choices by a number of cataloguing initiatives. The ELIXIR Tools and Data Services Registry (bio.tools) aims to provide a central information point, independent of any specific scientific scope within bioinformatics or technological implementation. Meanwhile, efforts to integrate bioinformatics software in workbench and workflow environments have accelerated to enable the design, automation, and reproducibility of bioinformatics experiments. One such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date, no convenient mechanism to register such services en masse. We present ReGaTE (Registration of Galaxy Tools in Elixir), a software utility that automates the process of registering the services available in a Galaxy instance. This utility uses the BioBlend application program interface to extract service metadata from a Galaxy server, enhance the metadata with the scientific information required by bio.tools, and push it to the registry. ReGaTE provides a fast and convenient way to publish Galaxy services in bio.tools. By doing so, service providers may increase the visibility of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE . © The Author 2017. Published by Oxford University Press.

Structure and Stability of GeAu{sub n}, n = 1-10 clusters: A Density Functional Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Priyanka,; Dharamvir, Keya; Sharma, Hitesh

2011-12-12

The structures of Germanium doped gold clusters GeAu{sub n} (n = 1-10) have been investigated using ab initio calculations based on density functional theory (DFT). We have obtained ground state geometries of GeAu{sub n} clusters and have it compared with Silicon doped gold clusters and pure gold clusters. The ground state geometries of the GeAu{sub n} clusters show patterns similar to silicon doped gold clusters except for n = 5, 6 and 9. The introduction of germanium atom increases the binding energy of gold clusters. The binding energy per atom of germanium doped cluster is smaller than the corresponding siliconmore » doped gold cluster. The HUMO-LOMO gap for Au{sub n}Ge clusters have been found to vary between 0.46 eV-2.09 eV. The mullikan charge analysis indicates that charge of order of 0.1e always transfers from germanium atom to gold atom.« less

Time delay of cascade radiation for TeV blazars and the measurement of the intergalactic magnetic field

DOE PAGES

Dermer, Charles D.; Cavadini, Massimo; Razzaque, Soebur; ...

2011-05-06

Here, recent claims that the strength B IGMF of the intergalactic magnetic field (IGMF) is ≳10 –15 G are based on upper limits to the expected cascade flux in the GeV band produced by blazar TeV photons absorbed by the extragalactic background light. This limit depends on an assumption that the mean blazar TeV flux remains constant on timescales ≳2(B IGMF/10 –18G) 2/(E/10 GeV) 2 yr for an IGMF coherence length ≈1 Mpc, where E is the measured photon energy. Restricting TeV activity of 1ES 0229+200 to ≈3-4 years during which the source has been observed leads to a moremore » robust lower limit of B IGMF ≳10 –18 G, which can be larger by an order of magnitude if the intrinsic source flux above ≈5-10 TeV from 1ES 0229+200 is strong.« less

A concise guide for the determination of less-studied technology-critical elements (Nb, Ta, Ga, In, Ge, Te) by inductively coupled plasma mass spectrometry in environmental samples

NASA Astrophysics Data System (ADS)

Filella, Montserrat; Rodushkin, Ilia

2018-03-01

There is an increasing demand for analytical techniques able to measure so-called 'technology-critical elements', a set of chemical elements increasingly used in technological applications, in environmental matrices. Nowadays, inductively coupled plasma-mass spectrometry (ICP-MS) has become the technique of choice for measuring trace element concentrations. However, its application is often less straightforward than often assumed. The hints and drawbacks of ICP-MS application to the measurement of a set of less-studied technology-critical elements (Nb, Ta, Ga, In, Ge and Te) is discussed here and concise guidelines given.

Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities

NASA Astrophysics Data System (ADS)

Huo, Pengyun; Galiana, Beatriz; Rey-Stolle, Ignacio

2017-04-01

In the quest for metal contacts for electronic devices handling high current densities, we report the results of Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-GaAs and compare them to Ti/Pd/Ag and AuGe/Ni/Au. These metal systems have been designed with the goal of producing an electrical contact with (a) low metal-semiconductor specific contact resistance, (b) very high sheet conductance, (c) good bondability, (d) long-term durability and (e) cost-effectiveness. The structure of the contacts consists of an interfacial layer (either Pd or Pd/Ge) intended to produce a low metal-semiconductor specific contact resistance; a diffusion barrier (Ti/Pd) and a thick top layer of Ag to provide the desired high sheet conductance, limited cost and good bondability. The results show that both systems can achieve very low metal resistivity (ρ M ˜ 2 × 10-6 Ω cm), reaching values close to that of pure bulk silver. This fact is attributed to the Ti/Pd bilayer acting as an efficient diffusion barrier, and thus the metal sheet resistance can be controlled by the thickness of the deposited silver layer. Moreover, the use of Pd as interfacial layer produces contacts with moderate specific contact resistance (ρ C ˜ 10-4 Ω cm2) whilst the use of Pd/Ge decreases the specific contact resistance to ρ C ˜ 1.5 × 10-7 Ω cm2, as a result of the formation of a Pd4(GaAs, Ge2) compound at the GaAs interface.

10 CFR 72.80 - Other records and reports.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 10 Energy 2 2010-01-01 2010-01-01 false Other records and reports. 72.80 Section 72.80 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) LICENSING REQUIREMENTS FOR THE INDEPENDENT STORAGE OF SPENT... with the Federal Energy Regulatory Commission, need not submit the annual financial report or a...

Progress toward the development of dual junction GaAs/Ge solar cells

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Krut, D. D.; Cavicchi, B. T.; Ralph, E.; Chung, M.

1991-01-01

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Charge transfer in photorefractive CdTe:Ge at different wavelengths

NASA Astrophysics Data System (ADS)

Shcherbin, K.; Odoulov, S.; Ramaz, F.; Farid, B.; Briat, B.; von Bardeleben, H. J.; Delaye, P.; Roosen, G.

2001-10-01

The charge transfer processes in photorefractive CdTe:Ge were modeled using the data of optical absorption, magnetic circular dichroism (MCD) and electron paramagnetic resonance (EPR) spectroscopies. Within the developed model the variations in the photorefractive properties of different CdTe:Ge samples are explained by differences in the relative concentrations of donor and trap centers. The existence of two different centers of comparable concentrations, each in two charge states, allows charge redistribution between them and gives rise to optical sensitization of some CdTe:Ge samples for photorefractive recording under an auxiliary illumination. In the present article we follow the proposal of pseudo-3D presentation of light-induced absorption to distinguish the main charge transfer processes at different excitation energies and explain the sensitization of CdTe:Ge for photorefractive recording at 1.06, 1.32 and 1.55 μm by light with appropriate wavelength.

Multi-GeV electron-positron beam generation from laser-electron scattering.

PubMed

Vranic, Marija; Klimo, Ondrej; Korn, Georg; Weber, Stefan

2018-03-16

The new generation of laser facilities is expected to deliver short (10 fs-100 fs) laser pulses with 10-100 PW of peak power. This opens an opportunity to study matter at extreme intensities in the laboratory and provides access to new physics. Here we propose to scatter GeV-class electron beams from laser-plasma accelerators with a multi-PW laser at normal incidence. In this configuration, one can both create and accelerate electron-positron pairs. The new particles are generated in the laser focus and gain relativistic momentum in the direction of laser propagation. Short focal length is an advantage, as it allows the particles to be ejected from the focal region with a net energy gain in vacuum. Electron-positron beams obtained in this setup have a low divergence, are quasi-neutral and spatially separated from the initial electron beam. The pairs attain multi-GeV energies which are not limited by the maximum energy of the initial electron beam. We present an analytical model for the expected energy cutoff, supported by 2D and 3D particle-in-cell simulations. The experimental implications, such as the sensitivity to temporal synchronisation and laser duration is assessed to provide guidance for the future experiments.

Prototype Ge:Ga detectors for the NASA-Ames cooled grating spectrometer

NASA Technical Reports Server (NTRS)

Houck, J. R.

1981-01-01

The detectors were fabricated from a Ge:Ga wafer from Eagle-Pitcher with a room temperature resistivity of approx. 12ohms cm. The wafer is approximately 2 inches in diameter and 0.061 inches thick. The contact material was ion implanted with Boron using 10 to the 14th power ions/sq cm at 25 Kev and 2 x10 to the 14th power ions/sq cm at 50 Kev. The crystal was then sputter-cleaned and metallized first with sputtered Ti and then sputter Au. In addition to the usual infrared measurements of responsivity and noise, measurements were made of the detectors' response to ionizing radiation.

Synthesis and first-principle calculations of the structural and electronic properties of Ge-substituted type-VIII Ba8Ga16Sn30 clathrate

NASA Astrophysics Data System (ADS)

Shen, Lanxian; Li, Decong; Liu, Hongxia; Liu, Zuming; Deng, Shukang

2016-12-01

In this study, the structural and electronic structural properties of Ba8Ga16Sn30-xGex (0≤x≤30) are determined by the first-principle method on the basis of density functional theory. Consistent with experimental findings, calculated results reveal that Ge atoms preferentially occupy the 2a and 24g sites in these compounds. As the content of Ge in Ge-substituted clathrate is increased, the lattice parameter is decreased, and the structural stability is enhanced. The bandgaps of the compound at 1≤x≤10 are smaller than those of Ba8Ga16Sn30. By contrast, the bandgaps of the compound at x>10 are larger than those of Ba8Ga16Sn30. The substitution of Ge for Sn affects p-type conductivity but not n-type conductivity. As Ge content increases, the whole conduction band moves to the direction of high energy, and the density of states of valence-band top decreases. The calculated potential energy versus displacement of Ba indicates that the vibration energy of this atom increases as cage size decreases. Because Ge substitution also affects clathrate structural symmetry, the distance of Ba atom deviation from the center of the cage initially increases and subsequently decreases as the Ge content increases.

Photoinduced second-order optical susceptibilities of Er 2O 3 doped TeO 2-GeO 2-PbO glasses

NASA Astrophysics Data System (ADS)

Kassab, L. R. P.; Pinto, R. de A.; Kobayashi, R. A.; Piasecki, M.; Bragiel, P.; Kityk, I. V.

2007-06-01

Second-order optical susceptibilities were established in the optically poled erbium doped tellurite glasses near the melting temperature. The non-linear optical susceptibility was formed by bicolor coherent optical treatment performed by two coherent laser beams originated from 50 ps Nd-YAG laser ( λ = 1.32 μm) exciting the high pressure hydrogen laser cell emitting at 1907 nm. The non-centrosymmetric grating of the medium was created by coherent superposition of the fundamental laser illumination at 1907 nm and the doubled frequency one at 953.5 nm. The maximally all-optically poled SHG occurs for 2% doped Er 2O 3 (in weighting units) TeO 2-GeO 2-PbO glass. It was found that the photoinduced SHG demonstrates a saturation during the photo-treatment of 9-10 min using the two beams polarized at angle about 45° between them. During the coherent bicolor optical treatment it was achieved the value of second-order susceptibility up to 3.6 pm/V at 1907 nm. The optimal ratio between the fundamental beam with power density about 1.1 GW/cm 2 and writing doubled frequency seeding beam about 0.015 GW/cm 2 corresponds to the maximal of photoinduced SHG. For glasses with lower concentration of Er 2O 3, the relaxation of the second-order optical susceptibility is substantially longer and achieves SHG value that corresponds to 80% of the maximal ones. It is necessary to emphasize that efficient optically-poled grating exists only within the narrow temperature range near the glassing temperature. Possible physical mechanisms of the phenomenon observed are discussed. Generally the used glasses possess better parameters than early investigated germinate glasses.

Anomalous Phase Change in [(GeTe)2/(Sb2Te3)]20 Superlattice Observed by Coherent Phonon Spectroscopy

NASA Astrophysics Data System (ADS)

Makino, K.; Saito, Y.; Mitrofanov, K.; Tominaga, J.; Kolobov, A. V.; Nakano, T.; Fons, P.; Hase, M.

The temperature-dependent ultrafast coherent phonon dynamics of topological (GeTe)2/(Sb2Te3) super lattice phase change memory material was investigated. By comparing with Ge-Sb-Te alloy, a clear contrast suggesting the unique phase change behavior was found.

Syntheses, crystal structures, and characterization of two new Tl+-Cu2+-Te6+ oxides: Tl4CuTeO6 and Tl6CuTe2O10

NASA Astrophysics Data System (ADS)

Yeon, Jeongho; Kim, Sang-Hwan; Green, Mark A.; Bhatti, Kanwal Preet; Leighton, C.; Shiv Halasyamani, P.

2012-12-01

Crystals and polycrystalline powders of two new oxide materials, Tl4CuTeO6 and Tl6CuTe2O10, have been synthesized by hydrothermal and solid-state methods. The materials were structurally characterized by single-crystal X-ray diffraction. Tl4CuTeO6 and Tl6CuTe2O10 exhibit one dimensional anionic slabs of [CuTeO6]4- and [CuTe2O10]6-, respectively. Common to both slabs is the occurrence of Cu2+O4 distorted squares and Te6+O6 octahedra. The slabs are separated by Tl+ cations. For Tl4CuTeO6, magnetic measurements indicate a maximum at ∼8 K in the temperature dependence of the susceptibility. Low temperature neutron diffraction data confirm no long-range magnetic ordering occurs and the susceptibility was adequately accounted for by fits to a Heisenberg alternating chain model. For Tl6CuTe2O10 on the other hand, magnetic measurements revealed paramagnetism with no evidence of long-range magnetic ordering. Infrared, UV-vis spectra, thermogravimetric, and differential thermal analyses are also reported. Crystal data: Tl4CuTeO6, Triclinic, space group P-1 (No. 2), a=5.8629(8) Å, b=8.7848(11) Å, c=9.2572(12) Å, α=66.0460(10), β=74.2010(10), γ=79.254(2), V=417.70(9) Å3, and Z=2; Tl6CuTe2O10, orthorhombic, space group Pnma (No. 62), a=10.8628(6) Å, b=11.4962(7) Å, c=10.7238(6) Å, V=1339.20(13) Å3, and Z=4.

/B(E2) values from low-energy Coulomb excitation at an ISOL facility: the /N=80,82 Te isotopes

NASA Astrophysics Data System (ADS)

Barton, C. J.; Caprio, M. A.; Shapira, D.; Zamfir, N. V.; Brenner, D. S.; Gill, R. L.; Lewis, T. A.; Cooper, J. R.; Casten, R. F.; Beausang, C. W.; Krücken, R.; Novak, J. R.

2003-01-01

B(E2;0+1→2+1) values for the unstable, neutron-rich nuclei 132,134Te were determined through Coulomb excitation, in inverse kinematics, of accelerated beams of these nuclei. The systematics of measured B(E2) values from the ground state to the first excited state have been extended to the N=82 shell closure in the Te nuclei and have been compared with the predictions of different theories. The measurements were performed at the Holifield Radioactive Ion Beam Facility (HRIBF) using the GRAFIK detector. The success of this approach, which couples a 5.7% efficient through-well NaI(Tl) γ-ray detector with thin foil microchannel plate beam detectors, also demonstrates the feasibility for Coulomb excitation studies of neutron-rich nuclei even further from the valley of beta stability, both at present-generation ISOL facilities and at the proposed Rare Isotope Accelerator.

Fabrication of Si-As-Te ternary amorphous semiconductor in the microgravity environment (M-13)

NASA Technical Reports Server (NTRS)

Hamakawa, Yoshihiro

1993-01-01

Ternary chalcogenide Si-As-Te system is an interesting semiconductor from the aspect of both basic physics and technological applications. Since a Si-As-Te system consists of a IV-III-II hedral bonding network, it has a very large glass forming region with a wide physical constant controllability. For example, its energy gap can be controlled in a range from 0.6 eV to 2.5 eV, which corresponds to the classical semiconductor Ge (0.66 eV), Si (1.10 eV), GaAs (1.43 eV), and GaP (2.25 eV). This fact indicates that it would be a suitable system to investigate the compositional dependence of the atomic and electronic properties in the random network of solids. In spite of these significant advantages in the Si-As-Te amorphous system, a big barrier impending the wide utilization of this material is the huge difficulty encountered in the material preparation which results from large differences in the weight density, melting point, and vapor pressure of individual elements used for the alloying composition. The objective of the FMPT/M13 experiment is to fabricate homogeneous multi-component amorphous semiconductors in the microgravity environment of space, and to make a series of comparative characterizations of the amorphous structures and their basic physical constants on the materials prepared both in space and in normal terrestrial gravity.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Experimental Constraints on γ-Ray Pulsar Gap Models and the Pulsar GeV to Pulsar Wind Nebula TeV Connection

NASA Astrophysics Data System (ADS)

Abeysekara, A. U.; Linnemann, J. T.

2015-05-01

The pulsar emission mechanism in the gamma ray energy band is poorly understood. Currently, there are several models under discussion in the pulsar community. These models can be constrained by studying the collective properties of a sample of pulsars, which became possible with the large sample of gamma ray pulsars discovered by the Fermi Large Area Telescope. In this paper we develop a new experimental multi-wavelength technique to determine the beaming factor ≤ft( {{f}{Ω }} \\right) dependance on spin-down luminosity of a set of GeV pulsars. This technique requires three input parameters: pulsar spin-down luminosity, pulsar phase-averaged GeV flux, and TeV or X-ray flux from the associated pulsar wind nebula (PWN). The analysis presented in this paper uses the PWN TeV flux measurements to study the correlation between {{f}{Ω }} and \\dot{E}. The measured correlation has some features that favor the Outer Gap model over the Polar Cap, Slot Gap, and One Pole Caustic models for pulsar emission in the energy range of 0.1-100 GeV, but one must keep in mind that these simulated models failed to explain many of the most important pulsar population characteristics. A tight correlation between the pulsar GeV emission and PWN TeV emission was also observed, which suggests the possibility of a linear relationship between the two emission mechanisms. In this paper we also discuss a possible mechanism to explain this correlation.

Optical contrast and laser-induced phase transition in GeCu2Te3 thin film

NASA Astrophysics Data System (ADS)

Saito, Yuta; Sutou, Yuji; Koike, Junichi

2013-02-01

Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu2Te3 film based on the reflectance of amorphous and crystalline states. The GeCu2Te3 film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge2Sb2Te5 film. The crystallization starting time of the as-deposited GeCu2Te3 film was as fast as that of the as-deposited Ge2Sb2Te5 film. Furthermore, the GeCu2Te3 crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge2Sb2Te5.

Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

NASA Astrophysics Data System (ADS)

Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L.

2012-01-01

We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination with plasma enhanced chemical vapor deposited SiO2 layers. The use of stacked HfO2/SiO2 results in better interface quality with InGaAs/InP heterostructures, as illustrated by smaller leakage current and improved breakdown voltage. These improvements can be attributed to the reduced defect density and charge trapping at the dielectric-semiconductor interface. The deposition at room temperature makes these films suitable for sensitive devices.

Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

DOE PAGES

Ogedengbe, O. S.; Swartz, C. H.; Jayathilaka, P. A. R. D.; ...

2017-06-06

Here, iodine-doped CdTe and Cd 1-xMg xTe layers were grown by molecular beam epitaxy. Secondary ion mass spectrometry characterization was used to measure dopant concentration, while Hall measurement was used for determining carrier concentration. Photoluminescence intensity and time-resolved photoluminescence techniques were used for optical characterization. Maximum n-type carrier concentrations of 7.4 x 10 18 cm -3 for CdTe and 3 x 10 17 cm -3 for Cd 0.65Mg 0.35Te were achieved. Studies suggest that electrically active doping with iodine is limited with dopant concentration much above these values. Dopant activation of about 80% was observed in most of the CdTemore » samples. The estimated activation energy is about 6 meV for CdTe and the value for Cd 0.65Mg 0.35Te is about 58 meV. Iodine-doped samples exhibit long lifetimes with no evidence of photoluminescence degradation with doping as high as 2 x 10 18 cm -3, while indium shows substantial non-radiative recombination at carrier concentrations above 5 x 10 16 cm -3. Iodine was shown to be thermally stable in CdTe at temperatures up to 600 °C. Results suggest iodine may be a preferred n-type dopant compared to indium in achieving heavily doped n-type CdTe.« less

THz Pulse Detection by Multilayered GeTe/Sb2Te3.

PubMed

Makino, Kotaro; Kuromiya, Shota; Takano, Keisuke; Kato, Kosaku; Nakajima, Makoto; Saito, Yuta; Tominaga, Junji; Iida, Hitoshi; Kinoshita, Moto; Nakano, Takashi

2016-11-30

We proposed and demonstrated terahertz (THz) pulse detection by means of multilayered GeTe/Sb 2 Te 3 phase-change memory materials that are also known as a multilayer topological insulator-normal insulator (MTN) system. THz time-domain spectroscopy measurement was performed for MTN films with different multilayer repetitions as well as a conventional as-grown Ge-Te-Sb (GST) alloy film. It was found that MTNs absorb THz waves and that the absorption coefficient depends on the number of layers, while the as-grown GST alloy film was almost transparent for THz waves. Simple MTN-based THz detection devices were fabricated, and the THz-induced change in the current signal was measured when a DC bias voltage was applied between the electrodes. We confirmed that irradiation of THz pulse causes a decrease in the resistance of the MTNs. This result indicates that our devices are capable of THz detection.

Thickness dependence of the electrical and thermoelectric properties of co-evaporated Sb2Te3 films

NASA Astrophysics Data System (ADS)

Shen, Haishan; Lee, Suhyeon; Kang, Jun-gu; Eom, Tae-Yil; Lee, Hoojeong; Han, Seungwoo

2018-01-01

P-type antimony telluride (Sb2Te3) films of various thicknesses (1-, 6-, 10-, and 16-μm) were deposited on an oxidized Si (100) substrate at 250 °C by effusion cell co-evaporation. Microstructural analysis using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the grains of the films grew in a mode in which recrystallization was prevalent and grain growth subdued, in contrast to typical film growth, which is often characterized by grain growth. The resultant microstructure exhibited narrow columnar grains, the preferred orientation of which changed with film growth thickness from (1010) with the 1-μm films to (015) for the 6- and 10-μm films, and finally (110) for the 16-μm films. Carrier mobility and the overall thermoelectric properties of the Sb2Te3 films were affected significantly by changes in the film microstructure; this was attributed to the strong anisotropy of Sb2Te3 regarding electrical conductivity. The highest power factor of 3.3 mW/mK2 was observed for the 1-μm-thick Sb2Te3 film.

BOREAS TE-10 Leaf Chemistry Data

NASA Technical Reports Server (NTRS)

Hall, Forrest G. (Editor); Papagno, Andrea (Editor); Middleton, Elizabeth; Sullivan, Joseph

2000-01-01

The BOREAS TE- 10 team collected several data sets in support of its efforts to characterize and interpret information on the reflectance, transmittance, gas exchange, chlorophyll content, carbon content, hydrogen content, and nitrogen content of boreal vegetation. This data set describes the relationship between sample location, age, chlorophyll content, and C-H-N concentrations at several sites in the SSA conducted during the growing seasons of 1994 and 1996. The data are stored in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Center (DAAC).

Deep traps in n-type GaN epilayers grown by plasma assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamyczek, P.; Placzek-Popko, E.; Zielony, E.

2014-01-14

In this study, we present the results of investigations on Schottky Au-GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature range of 77 K–350 K. Undoped GaN layers were grown using the plasma-assisted molecular beam epitaxy technique on commercial GaN/sapphire templates. The quality of the epilayers was studied by micro-Raman spectroscopy (μ-RS) which proved the hexagonal phase and good crystallinity of GaN epilayers as well as a slight strain. The photoluminescence spectrum confirmed a high crystal quality by intense excitonic emission but it also exhibited a blue emission band of low intensity. DLTS signal spectra revealed themore » presence of four majority traps: two high-temperature and two low-temperature peaks. Using the Laplace DLTS method and Arrhenius plots, the apparent activation energy and capture cross sections were obtained. For two high-temperature majority traps, they were equal to E{sub 1} = 0.65 eV, σ{sub 1} = 8.2 × 10{sup −16} cm{sup 2} and E{sub 2} = 0.58 eV, σ{sub 2} = 2.6 × 10{sup −15} cm{sup 2} whereas for the two low-temperature majority traps they were equal to E{sub 3} = 0.18 eV, σ{sub 3} = 9.7 × 10{sup −18} cm{sup 2} and E{sub 4} = 0.13 eV, σ{sub 4} = 9.2 × 10{sup −18} cm{sup 2}. The possible origin of the traps is discussed and the results are compared with data reported elsewhere.« less

77 FR 38714 - Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-28

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78 FR 63565 - Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires

Federal Register 2010, 2011, 2012, 2013, 2014

2013-10-24

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10 CFR 35.80 - Provision of mobile medical service.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 10 Energy 1 2010-01-01 2010-01-01 false Provision of mobile medical service. 35.80 Section 35.80... § 35.80 Provision of mobile medical service. (a) A licensee providing mobile medical service shall— (1... to ensure compliance with the requirements in Part 20 of this chapter. (b) A mobile medical service...

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, Priyalal S.; Chen, Yuanping; Brill, Gregory; Dhar, Nibir K.; Carmody, Michael; Bailey, Robert; Arias, Jose

2006-05-01

At the Army Research Laboratory (ARL), a new ternary semiconductor system CdSe xTe 1-x/Si(211) is being investigated as an alternative substrate to bulk-grown CdZnTe substrates for HgCdTe growth by molecular beam epitaxy. Under optimized conditions, best layers show surface defect density less than 400 cm -2 and full width at half maximum of X-ray double crystal rocking curve as low as 100 arc-sec with excellent uniformity over 3 inch area. LW-HgCdTe layers on these compliant substrates exhibit comparable electrical properties to those grown on bulk CZT substrates. Photovoltaic devices fabricated on these LWIR material shows diffusion limited performance at 78K indicating high quality material. Measured R °A at 78K on λ co = 10 μm material is on the order of 340 Ω-cm II. In addition to single devices, we have fabricated 256x256 2-D arrays with 40 μm pixel pitch on LW-HgCdTe grown on Si compliant substrates. Data shows excellent QE operability of 99% at 78K under a tactical background flux of 6.7x10 15 ph/cm2sec. Most probable dark current at the peak distribution is 5.5 x 10 9 e-/sec and is very much consistent with the measured R °A values from single devices. Initial results indicate NETD of 33 mK for a cut-off wavelength of 10 μm with 40 micron pixels size. This work demonstrates CdSe xTe 1-x/Si(211) substrates provides a potential road map to more affordable, robust 3 rd generation FPAs.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

NASA Astrophysics Data System (ADS)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

2014-06-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons

NASA Technical Reports Server (NTRS)

Meier, D. L.; Szedon, J. R.; Bartko, J.; Chung, M. A.

1989-01-01

A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

NASA Astrophysics Data System (ADS)

Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang

2015-07-01

Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

Thermoelectric Performance of Yb-Doped Ba8Ni0.1Zn0.54Ga13.8Ge31.56 Type-I Clathrate Synthesized by High-Pressure Technique

NASA Astrophysics Data System (ADS)

Chen, Chen; Zhang, Long; Dong, Jianying; Xu, Bo

2017-05-01

Type I clathrates are a promising thermoelectric (TE) material for waste heat recovery applications. However, the TE figure-of-merit of type I clathrates still needs further improvement. In this study, Yb-doped Ba8- x Yb x Ni0.1Zn0.54 Ga13.8Ge31.56 (0 ≤ x ≤ 0.5) type I clathrates were synthesized using a high-pressure technique. Energy dispersive spectrometry confirmed successful Yb doping. An increased Yb doping level reduces electrical resistivity and suppresses lattice thermal conductivity while keeping the Seebeck coefficient almost unchanged. TE figure-of-merit of Ba7.7Yb0.3Ni0.1Zn0.54Ga13.8Ge31.56 type I clathrate was improved by 15% (0.91) at the highest measured temperature (900 K) compared with a Yb-free sample.

Discovery of localized regions of excess 10-TeV cosmic rays.

PubMed

Abdo, A A; Allen, B; Aune, T; Berley, D; Blaufuss, E; Casanova, S; Chen, C; Dingus, B L; Ellsworth, R W; Fleysher, L; Fleysher, R; Gonzalez, M M; Goodman, J A; Hoffman, C M; Hüntemeyer, P H; Kolterman, B E; Lansdell, C P; Linnemann, J T; McEnery, J E; Mincer, A I; Nemethy, P; Noyes, D; Pretz, J; Ryan, J M; Parkinson, P M Saz; Shoup, A; Sinnis, G; Smith, A J; Sullivan, G W; Vasileiou, V; Walker, G P; Williams, D A; Yodh, G B

2008-11-28

The 7 year data set of the Milagro TeV observatory contains 2.2 x 10(11) events of which most are due to hadronic cosmic rays. These data are searched for evidence of intermediate scale structure. Excess emission on angular scales of approximately 10 degrees has been found in two localized regions of unknown origin with greater than 12sigma significance. Both regions are inconsistent with pure gamma-ray emission with high confidence. One of the regions has a different energy spectrum than the isotropic cosmic-ray flux at a level of 4.6sigma, and it is consistent with hard spectrum protons with an exponential cutoff, with the most significant excess at approximately 10 TeV. Potential causes of these excesses are explored, but no compelling explanations are found.

Growth and characterization of highly tensile strained Ge{sub 1−x}Sn{sub x} formed on relaxed In{sub y}Ga{sub 1−y}P buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wei; D'Costa, Vijay Richard; Dong, Yuan

2016-03-28

Ge{sub 0.94}Sn{sub 0.06} films with high tensile strain were grown on strain-relaxed In{sub y}Ga{sub 1−y}P virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge{sub 0.94}Sn{sub 0.06} film was varied by changing the In mole fraction in In{sub x}Ga{sub 1−x}P buffer layer. The tensile strained Ge{sub 0.94}Sn{sub 0.06} films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge{sub 0.94}Sn{sub 0.06} was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was notmore » relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge{sub 0.94}Sn{sub 0.06} on In{sub 0.77}Ga{sub 0.23}P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge{sub 0.94}Sn{sub 0.06}/In{sub 0.77}Ga{sub 0.23}P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.« less

Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

NASA Astrophysics Data System (ADS)

Sammak, Amir; Qi, Lin; Nanver, Lis K.

2015-12-01

The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to an Al interconnect metallization. The Ge is grown in oxide windows to the Si wafer and covered by a B and gallium (Ga) layer stack (PureGaB) composed of about a nanometer of Ga for forming the p + Ge region and 10 nm of B as an interdiffusion barrier to the Al. To form contact windows, the side-wall oxide is etched away, exposing a small tip of the Ge perimeter to Al that from this point travels about 5 μm into the bulk Ge crystal. In this process, Ge and Si materials are displaced, forming Ge-filled V-grooves at the Si surface. The Al coalesces in grains. This process is studied here by high-resolution cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy that confirm the purities of the Ge and Al grains. Diodes are fabricated with different geometries and statistical current-voltage characterization reveals a spread that can be related to across-the-wafer variations in the contact processing. The I- V behavior is characterized by low dark current, low contact resistance, and breakdown voltages that are suitable for operation in avalanching modes. The restricted access to the Ge of the Al inducing the Ge and Si material transport does not destroy the very good electrical characteristics typical of PureGaB Ge-on-Si diodes.

n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

2018-04-01

Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

NASA Astrophysics Data System (ADS)

Sims, P. E.; Wallace, P. M.; Xu, Chi; Poweleit, C. D.; Claflin, B.; Kouvetakis, J.; Menéndez, J.

2017-09-01

Monocrystalline alloys of GaAs and Ge with compositions (GaAs)yGe5-2y have been synthesized following a chemical vapor deposition approach that promotes the incorporation of Ga and As atoms as isolated donor-acceptor pairs. The structural and optical properties show distinct behavior relative to (GaAs)1-xGe2x counterparts produced by conventional routes. Strong band gap photoluminescence is observed in the 0.5-0.6 eV range for samples whose compositions approach the GaAsGe3 limit for isolated Ga-As pairs. In such samples, the Ge-like Raman modes appear at higher frequencies and are considerably narrower than those observed in samples with higher Ge concentrations. These results suggest that the growth mechanism may favor the formation of ordered phases comprising Ga-As-Ge3 tetrahedra. In contrast with the diamond-to-zincblende ordering transition previously reported for III-V-IV alloys, ordered structures built from Ga-As-Ge3 tetrahedra feature III-III and V-V pairs as third-nearest neighbors, and therefore both the III- and V-components are equally present in each of two fcc sublattices of the average diamond-like structure. These bonding arrangements likely lead to the observed optical response, indicating potential applications of these materials in mid-IR technologies integrated on Si.

Radiation-free superhydrophilic and antifogging properties of e-beam evaporated TiO2 films on glass

NASA Astrophysics Data System (ADS)

Garlisi, Corrado; Palmisano, Giovanni

2017-10-01

In this work, we show the unique wettability properties of TiO2 thin films deposited by e-beam evaporation on glass and treated at 500 °C. The deposited materials exhibited compact non-porous structures and their non-UV activated superwetting behavior was characterized, emphasizing the better performance compared to the bare glass substrate and to a commercial self-cleaning glass (Pilkington Activ™) even in terms of antifogging and optical properties. The results demonstrate how the superhydrophilic character arises from the used deposition technique inducing a large amount of oxygen vacancies further boosted by the annealing treatment, allowing for the fabrication of a pioneering material in the area of multifunctional coatings. The superhydrophilic character was maintained even at an extremely small thickness (20 nm), similarly to the adhesion of the film to the glass substrate, as confirmed by ultrasound stress tests and the cross-cut test performed according to ISO 2409 standard. The photocatalytic activity of the e-beam evaporated film was also assessed by degradation of methanol, 2-propanol and toluene under UV light in a gas phase reactor and the performance was found to be in most cases superior compared to Pilkington Activ™.

45 CFR 80.10 - Decisions and notices.

Code of Federal Regulations, 2010 CFR

2010-10-01

... THE CIVIL RIGHTS ACT OF 1964 § 80.10 Decisions and notices. (a) Decisions by hearing examiners. After... section shall remain in effect. (Sec. 602, Civil Rights Act of 1964, 78 Stat. 252 (42 U.S.C. 2000d-1)) [29... Welfare DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL ADMINISTRATION NONDISCRIMINATION UNDER PROGRAMS...

45 CFR 80.10 - Decisions and notices.

Code of Federal Regulations, 2013 CFR

2013-10-01

... THE CIVIL RIGHTS ACT OF 1964 § 80.10 Decisions and notices. (a) Decisions by hearing examiners. After... section shall remain in effect. (Sec. 602, Civil Rights Act of 1964, 78 Stat. 252 (42 U.S.C. 2000d-1)) [29... Welfare DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL ADMINISTRATION NONDISCRIMINATION UNDER PROGRAMS...

45 CFR 80.10 - Decisions and notices.

Code of Federal Regulations, 2011 CFR

2011-10-01

... THE CIVIL RIGHTS ACT OF 1964 § 80.10 Decisions and notices. (a) Decisions by hearing examiners. After... section shall remain in effect. (Sec. 602, Civil Rights Act of 1964, 78 Stat. 252 (42 U.S.C. 2000d-1)) [29... Welfare DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL ADMINISTRATION NONDISCRIMINATION UNDER PROGRAMS...

45 CFR 80.10 - Decisions and notices.

Code of Federal Regulations, 2014 CFR

2014-10-01

... THE CIVIL RIGHTS ACT OF 1964 § 80.10 Decisions and notices. (a) Decisions by hearing examiners. After... section shall remain in effect. (Sec. 602, Civil Rights Act of 1964, 78 Stat. 252 (42 U.S.C. 2000d-1)) [29... Welfare Department of Health and Human Services GENERAL ADMINISTRATION NONDISCRIMINATION UNDER PROGRAMS...

45 CFR 80.10 - Decisions and notices.

Code of Federal Regulations, 2012 CFR

2012-10-01

... THE CIVIL RIGHTS ACT OF 1964 § 80.10 Decisions and notices. (a) Decisions by hearing examiners. After... section shall remain in effect. (Sec. 602, Civil Rights Act of 1964, 78 Stat. 252 (42 U.S.C. 2000d-1)) [29... Welfare DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL ADMINISTRATION NONDISCRIMINATION UNDER PROGRAMS...

Superconductivity in YTE2Ge2 compounds (TE = d-electron transition metal)

NASA Astrophysics Data System (ADS)

Chajewski, G.; Samsel-Czekała, M.; Hackemer, A.; Wiśniewski, P.; Pikul, A. P.; Kaczorowski, D.

2018-05-01

Polycrystalline samples of YTE2Ge2 with TE = Co, Ni, Ru, Rh, Pd and Pt were synthesized and characterized by means of X-ray powder diffraction and low-temperature electrical resistivity and specific heat measurements, supplemented by fully relativistic full-potential local-orbital band structure calculations. We confirm that most of the compounds studied crystallize in a body-centered tetragonal ThCr2S2 -type structure (space group I 4 / mmm) and have three-dimensional Fermi surfaces, while only one of them (YPt2Ge2) forms with a primitive tetragonal CaBe2Ge2 -type unit cell (space group P 4 / nmm) and possesses quasi-two-dimensional Fermi surface sheets with some nesting. Physical properties data show conventional superconductivity in the phases with TE = Co, Pd and Pt, i.e. independently of the structure type (and hence the dimensionality of the Fermi surface).

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.

2014-05-21

The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimizedmore » GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.« less

Electron beam irradiated ITO films as highly transparent p-type electrodes for GaN-based LEDs.

PubMed

Hong, C H; Wie, S M; Park, M J; Kwak, J S

2013-08-01

We have investigated the effect of electron beam irradiation on the electrical and optical properties of ITO film prepared by magnetron sputtering method at room temperature. Electron beam irradiation to the ITO films resulted in a significant decrease in sheet resistance from 1.28 x 10(-3) omega cm to 2.55 x 10(-4) omega cm and in a great increase in optical band gap from 3.72 eV to 4.16 eV, followed by improved crystallization and high transparency of 97.1% at a wavelength of 485 nm. The overall change in electrical, optical and structural properties of ITO films is related to annealing effect and energy transfer of electron by electron beam irradiation. We also fabricated GaN-based light-emitting diodes (LEDs) by using the ITO p-type electrode with/without electron beam irradiation. The results show that the LEDs having ITO p-electrode with electron beam irradiation produced higher output power due to the low absorption of light in the p-type electrode.

A study of electromigration behaviors of Ge2Sb2Te5 chalcogenide nano-strips subjected to pulse bias

NASA Astrophysics Data System (ADS)

Huang, Yin-Hsien; Hsieh, Tsung-Eong

2017-07-01

Electromigration (EM) behaviors of pristine Ge2Sb2Te5 (GST) and cerium-doped GST (Ce-GST) nano-strips were investigated by the mean-time-to-failure (MTTF) tests under the pulse bias at the conditions of pulse frequency (f) ranging from 1 to 25 MHz and duty cycle ranging from 50% to 80%. Analytical results indicated that, at f greater than 10 MHz, the EM failure of GST nano-strips in pulse bias environment could be depicted by the ‘average current model’. With the aid of Black’s theory, the activation energies (E a) of EM process under pulse bias were found to be 0.63 and 0.56 eV for GST and Ce-GST nano-strips, respectively. The E a values were comparatively smaller than those observed in direct-current MTTF test of GST thin-film samples, implying the enhancement of surface diffusion and skin effect in GST nano-strips. The morphology and composition analyses indicated that the electrostatic and the electron-wind forces might simultaneously involve in the mass transport in GST nano-strips under the test conditions of this study. The composition analysis also revealed that doping could not effectively alleviate the element segregation in GST subjected to electrical bias.

Electron Transport and Minority Carrier Lifetime in HgCdSe 2013 2-6 Workshop

DTIC Science & Technology

2014-03-11

FOR PUBLIC RELEASE Alternative IR Material 0.54 0.56 0.58 0.60 0.62 0.64 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 HgSe HgTe MgS ZnS MgTe CdS...CdSe ZnSe ZnTe CdTe AlP GaP AlSb InP Ge Si GaSb InSbInAs AlAs GaAs MgSe Ba nd ga p En er gy (e V) Lattice Constant (nm) • HgCdSe is being

Control of Laser Plasma Based Accelerators up to 1 GeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakamura, Kei

2007-12-01

This dissertation documents the development of a broadband electron spectrometer (ESM) for GeV class Laser Wakefield Accelerators (LWFA), the production of high quality GeV electron beams (e-beams) for the first time in a LWFA by using a capillary discharge guide (CDG), and a statistical analysis of CDG-LWFAs. An ESM specialized for CDG-LWFAs with an unprecedented wide momentum acceptance, from 0.01 to 1.1 GeV in a single shot, has been developed. Simultaneous measurement of e-beam spectra and output laser properties as well as a large angular acceptance (> ± 10 mrad) were realized by employing a slitless scheme. A scintillating screenmore » (LANEX Fast back, LANEX-FB)--camera system allowed faster than 1 Hz operation and evaluation of the spatial properties of e-beams. The design provided sufficient resolution for the whole range of the ESM (below 5% for beams with 2 mrad divergence). The calibration between light yield from LANEX-FB and total charge, and a study on the electron energy dependence (0.071 to 1.23 GeV) of LANEX-FB were performed at the Advanced light source (ALS), Lawrence Berkeley National Laboratory (LBNL). Using this calibration data, the developed ESM provided a charge measurement as well. The production of high quality electron beams up to 1 GeV from a centimeter-scale accelerator was demonstrated. The experiment used a 310 μm diameter gas-filled capillary discharge waveguide that channeled relativistically-intense laser pulses (42 TW, 4.5 x 10 18 W/cm 2) over 3.3 centimeters of sufficiently low density (≃ 4.3 x 10 18/cm 3) plasma. Also demonstrated was stable self-injection and acceleration at a beam energy of ≃ 0.5 GeV by using a 225 μm diameter capillary. Relativistically-intense laser pulses (12 TW, 1.3 x 10 18W/cm 2) were guided over 3.3 centimeters of low density (≃ 3.5 x 10 18/cm 3) plasma in this experiment. A statistical analysis of the CDG-LWFAs performance was carried out. By taking advantage of the high repetition rate

Using an intense laser beam in interaction with muon/electron beam to probe the noncommutative QED

NASA Astrophysics Data System (ADS)

Tizchang, S.; Batebi, S.; Haghighat, M.; Mohammadi, R.

2017-02-01

It is known that the linearly polarized photons can partly transform to circularly polarized ones via forward Compton scattering in a background such as the external magnetic field or noncommutative space time. Based on this fact we explore the effects of the NC-background on the scattering of a linearly polarized laser beam from an intense beam of charged leptons. We show that for a muon/electron beam flux {overline{ɛ}}_{μ, e}˜ 1{0}^{12}/{10}^{10} TeV cm-2 sec-1 and a linearly polarized laser beam with energy k 0 ˜1 eV and average power {overline{P}}_{laser}˜eq 1{0}^3 KW, the generation rate of circularly polarized photons is about R V ˜ 104 /sec for noncommutative energy scale ΛNC ˜ 10 TeV. This is fairly large and can grow for more intense beams in near future.

Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-08-25

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Cosmic-ray elemental abundances from 1 to 10 GeV per amu for boron through nickel

NASA Technical Reports Server (NTRS)

Dwyer, Robert; Meyer, Peter

1987-01-01

The relative abundances of cosmic-ray nuclei in the charge range boron through nickel over the energy range 1-10 GeV per amu were measured with a balloon-borne detector. The instrument consists of a scintillation and Cerenkov counter telescope with a multiwire proportional chamber hodoscope and has been flown in four high-altitude balloon flights. Good charge resolution (sigma = 0.2 charge units at iron) and high statistical accuracy have been achieved. These data are used to derive the energy dependence of the leakage path length using the leaky box model of propagation and confinement in the galaxy. This energy dependence is found to be best fit by lambda = E(tot) exp -n, where n = 0.49 + or - 0.06 over 1-10 GeV per amu. Relative abundances at the source are consistent with an energy-independent composition.

Structure and Properties of Modified and Charge-Compensated Chalcogenide Glasses in the Na/Ba-Ga-Ge Selenide System

NASA Astrophysics Data System (ADS)

Mao, Alvin W.

3 to GeSe 2 results in the preferential formation of Ge-Ge bonds, which are distributed such that the clustering of ethane-like (Se3)Ge-Ge(Se3) units is avoided to the maximum extent. This behavior is entirely consistent with the continuously-alloyed structural scenario of chalcogenide glasses. However, for contents of Ga2Se3 greater than about 25--30 mol%, the avoidance of Ga-Ga and mixed Ga-Ge bonds results in the appearance of three-coordinated Se as an alternate mechanism to accommodate the Se deficiency. The addition of either Na2Se or BaSe to Ga2Se 3--GeSe2 glasses introduces an ionic bonding character to an otherwise largely covalently bonded network. As a result, the structure responds by adopting characteristics of the charge-compensated structural scenario of oxide glasses. In the stoichiometric Na2Se/BaSe--Ga 2Se3--GeSe2 glasses, the ratio of Na 2Se/BaSe:Ga2Se3 = 1 serves as a chemical threshold, where the network consists predominantly of corner-sharing (Ga/Ge)e4 tetrahedra, and the charge on the Na(Ba) cations is balanced by the GaSe4- tetrahedra. For glasses with Na 2Se/BaSe:Ga2Se3 < 1, the addition of Se-deficient Ga2Se3 induces the formation of Ge-Ge bonds. However, for glasses with Na2Se/BaSe:Ga2Se3 > 1, the addition of Na2Se/BaSe results in the formation of non-bridging Se atoms, which break up the connectivity of the glassy network. The major difference between the modifying elements Na and Ba is that the high field strength of the Ba cation induces a higher degree of chemical disorder in the glass network. This conclusion is evidenced by the presence of some Ge-Ge bonds in BaSe--Ga2Se3--GeSe2 glasses even at the chemical threshold composition of BaSe:Ga2Se3 = 1. The structural duality of the Na2Se/BaSe--Ga2Se 3--GeSe2 system is best observed in the off-stoichiometric BaSe--Ga2Se3--GeSe2+/-Se glasses. Here, the removal of Se from a stoichiometric glass with BaSe:Ga2Se 3 > 1 results in Ge-Ge bonds, while its addition in excess of stoichiometry

Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

2013-12-16

Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

The third-order optical nonlinearities of Ge-Ga-Sb(In)-S chalcogenide glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Haitao, E-mail: guoht_001@opt.ac.cn; Chen, Hongyan; Hou, Chaoqi

2011-05-15

Research highlights: {yields} It is firstly demonstrated that the nonlinear refractive index n{sub 2} is dependent on the covalency of bonds in chalcogenide glass. {yields} Homopolar metallic bonds in chalcogenide glass have positive contribution to large nonlinear refractive index n{sub 2} also. {yields} The 80GeS{sub 2}.20Sb{sub 2}S{sub 3} glass would be expected to be used in the all-optical switches working at 1330 nm and 1550 nm telecommunication wavelengths. -- Abstract: The third-order optical nonlinearities of 80GeS{sub 2}.(20 - x)Ga{sub 2}S{sub 3}.xY{sub 2}S{sub 3} (x = 0, 5, 10, 15, 20 and Y = Sb or In) chalcogenide glasses were investigatedmore » utilizing the Z-scan method at the wavelength of 800 nm and their linear optical properties and structure were also studied. By analyzing the compositional dependences and possible influencing factors including the linear refractive index, the concentration of lone electron pairs, the optical bandgap and the amount of weak covalent/homopolar bonds, it indicates that the electronic contribution in weak heteropolar covalent and homopolar metallic bonds is responsible for large nonlinear refractive index n{sub 2} in the chalcogenide glasses. These chalcogenide glasses have characteristics of environmentally friendship, wide transparency in the visible region, high nonlinear refractive index n{sub 2} and low nonlinear absorption coefficient {beta}, and would be expected to be used in the all-optical switches working at 1330 nm and 1550 nm telecommunication wavelengths.« less

Nuclear Structure Studies with Radioactive Ion Beams in the Mass A = 80 Region

NASA Astrophysics Data System (ADS)

Galindo-Uribarri, A.; Padilla-Rodal, E.; Batchelder, J. C.; Beene, J. R.; Lagergren, K. B.; Mueller, P. E.; Radford, D. C.; Stracener, D. W.; Urrego-Blanco, J. P.; Varner, R. L.; Yu, C.-H.

2009-03-01

An experimental program to measure spectroscopic properties of neutron-rich nuclei in the A = 80 region is underway at the Holifield Radioactive Ion Beam Facility. Our approach has been to get a comprehensive picture of the shell structure in this region by studying a series of properties of low lying states (E(2+), B(E2), g-factors and quadrupole moments). The beams, instrumentation and techniques developed specifically for this purpose have allowed us to systematically study the behavior of these observables along isotopic and isotonic chains using both stable and radioactive nuclei under almost identical experimental conditions. We have developed many techniques and detectors for in-beam gamma spectroscopy with radioactive ion beams. Most of the detectors can be used individually or in combination. Generally these detector systems have very large efficiencies. We give examples of their use from three recent experiments; namely, Coulomb excitation of n-rich nuclei along the N = 50 shell closure, the static quadrupole moment of the first 2+ in 78Ge and g-factor measurements of n-rich isotopes near N = 50.

Genomic, Proteomic, and Metabolite Characterization of Gemfibrozil-Degrading Organism Bacillus sp. GeD10.

PubMed

Kjeldal, Henrik; Zhou, Nicolette A; Wissenbach, Dirk K; von Bergen, Martin; Gough, Heidi L; Nielsen, Jeppe L

2016-01-19

Gemfibrozil is a widely used hypolipidemic and triglyceride lowering drug. Excess of the drug is excreted and discharged into the environment primarily via wastewater treatment plant effluents. Bacillus sp. GeD10, a gemfibrozil-degrader, was previously isolated from activated sludge. It is the first identified bacterium capable of degrading gemfibrozil. Gemfibrozil degradation by Bacillus sp. GeD10 was here studied through genome sequencing, quantitative proteomics and metabolite analysis. From the bacterial proteome of Bacillus sp. GeD10 1974 proteins were quantified, of which 284 proteins were found to be overabundant by more than 2-fold (FDR corrected p-value ≤0.032, fold change (log2) ≥ 1) in response to gemfibrozil exposure. Metabolomic analysis identified two hydroxylated intermediates as well as a glucuronidated hydroxyl-metabolite of gemfibrozil. Overall, gemfibrozil exposure in Bacillus sp. GeD10 increased the abundance of several enzymes potentially involved in gemfibrozil degradation as well as resulted in the production of several gemfibrozil metabolites. The potential catabolic pathway/modification included ring-hydroxylation preparing the substrate for subsequent ring cleavage by a meta-cleaving enzyme. The identified genes may allow for monitoring of potential gemfibrozil-degrading organisms in situ and increase the understanding of microbial processing of trace level contaminants. This study represents the first omics study on a gemfibrozil-degrading bacterium.

Defects in N/Ge coimplanted GaN studied by positron annihilation

NASA Astrophysics Data System (ADS)

Nakano, Yoshitaka; Kachi, Tetsu

2002-01-01

We have applied positron annihilation spectroscopy to study the depth distributions and species of defects in N-, Ge-, and N/Ge-implanted GaN at dosages of 1×1015 cm-2. For all the implanted samples, Ga vacancies introduced by ion-implantation are found to diffuse into much deeper regions of the GaN layers during the implantation and to change into some other vacancy-type defects by the annealing at 1300 °C. In particular, markedly different defects turn out to be newly created in the electrically activated regions for both the Ge- and N/Ge-implanted samples after annealing, indicating that these new defects are probably associated with the presence of the implanted Ge dopant atoms.

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paquette, B.; DeVita, M.; Turala, A.

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Liquidus Projections of Bi-Se-Ga and Bi-Se-Te Ternary Systems

NASA Astrophysics Data System (ADS)

Lin, Po-han; Chen, Sinn-wen; Hwang, Jenn-dong; Chu, Hsu-shen

2016-12-01

This study determines the liquidus projections of both Bi-Se-Ga and Bi-Se-Te ternary systems which are constituent ternary systems of promising Bi-Se-Te-Ga thermoelectric materials. Ternary Bi-Se-Ga and Bi-Se-Te alloys are prepared. Their primary solidification phases are experimentally determined, and thermal analysis experiments are carried out. The liquidus projections are determined based on the ternary experimental results and phase diagrams of constituent binary systems. The Bi-Se-Ga system includes seven primary solidification phases, Bi, Ga, GaSe, Ga2Se3, Se, Bi2Se3, and (Bi2)n(Bi2Se3)m. In the Bi-Se-Te system, there are five primary solidification phases, Bi, (Bi2)n(Bi2Te3)m, Bi2(Se,Te)3, (Se,Te), and (Bi2)n(Bi2Se3)m. Both the (Bi2)n(Bi2Te3)m and (Bi2)n(Bi2Se3)m phases are not a single phase, but a collection of series undetermined phases. Large miscibility gaps are observed in the Bi-Se-Ga system. The temperatures of the invariant reactions, Liquid + Bi + GaSe = Ga and Liquid + Ga2Se3 = Bi + GaSe, are at 495 K (222 °C) and 533 K (260 °C), respectively.

The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

NASA Astrophysics Data System (ADS)

Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

2017-11-01

The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.

First principles study of crystal Si-doped Ge2Sb2Te5

NASA Astrophysics Data System (ADS)

Yan, Beibei; Yang, Fei; Chen, Tian; Wang, Minglei; Chang, Hong; Ke, Daoming; Dai, Yuehua

2017-02-01

Ge2Sb2Te5 (GST) and Si-doped GST with hexagonal structure were investigated by means of First-principles calcucations. We performed many kinds of doping types and studied the electronic properties of Si-doped GST with various Si concentrations. The theoretical calculations show that the lowest formation energy appeared when Si atoms substitute the Sb atoms (SiSb). With the increasing of Si concentrations from 10% to 30%, the impurity states arise around the Fermi level and the band gap of the SiSb structure broadens. Meanwhile, the doping supercell has the most favorable structure when the doping concentration keeps in 20%. The Si-doped GST exhibits p-type metallic characteristics more distinctly owing to the Fermi level moves toward the valence band. The Te p, d-orbitals electrons have greater impact on electronic properties than that of Te s-orbitals.

The structure of {sup 117}Te and {sup 118}Te and collectivity in {sup 118}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duyar, C.; Draper, J.E.; Rubel, E.C.

1993-10-01

The reactions {sup 82}Se({sup 40}Ar,5n) and {sup 76}Ge({sup 48}Ca, 6 n) (beam energies 180MeV and 190MeV, respectively) were used to populate high spins states of {sup 117}Te and {sup 118}Te, respectively. {gamma} - {gamma} coincidences, E{sub gamma}, and coincidence I{sub gamma} have been measured. Angular correlation/distribution analysis has been made. {sup 117}Te has been extended to spin {approximately} 51/2. Our results do not support the two isolated bands found by Sharma et al. {sup 118}Te has been also extended to spin {approximately}22. A rotational band was found in {sup 118}Te with an average J {approximately}42h{sup 2}/MeV, corresponding to a {Beta}more » {approximately} 0.2.« less

Morphological analysis of GeTe in inline phase change switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Matthew R., E-mail: matthew.king2@ngc.com; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695; El-Hinnawy, Nabil

2015-09-07

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined bymore » variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.« less

Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Sorokin, S. V.; Sedova, I. V.; Belyaev, K. G.; Rakhlin, M. V.; Yagovkina, M. A.; Toropov, A. A.; Ivanov, S. V.

2018-03-01

Data on the molecular beam epitaxy (MBE) technology, design, and luminescent properties of heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots on InAs(001) substrates are presented. X-ray diffraction has been used to study short-period ZnTe/MgTe/MgSe superlattices used as wide-bandgap barriers in structures with CdTe/ZnTe quantum dots for the effective confinement of holes. It is shown that the design of these superlattices must take into account the replacement of Te atoms by selenium on MgSe/ZnTe and MgTe/MgSe heterointerfaces. Heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots exhibit photoluminescence at temperatures up to 300 K. The spectra of microphotoluminescence at T = 10 K display a set of emission lines from separate CdTe/ZnTe quantum dots, the surface density of which is estimated at 1010 cm-2.

Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

NASA Astrophysics Data System (ADS)

Wang, Wei-Fu; Cheng, Kai-Yuan; Hsieh, Kuang-Chien

2018-01-01

Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS) profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3) along with diffused germanium donors whose concentration (>>1018/cm3) determined by electro-chemical capacitance-voltage (ECV) profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL) shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA) centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

GaAs/Ge solar panels for the SAMPEX program

NASA Technical Reports Server (NTRS)

Dobson, Rodney; Kukulka, Jerry; Dakermanji, George; Roufberg, Lew; Ahmad, Anisa; Lyons, John

1992-01-01

GaAs based solar cells have been developed for spacecraft use for several years. However, acceptance and application of these cells for spacecraft missions has been slow because of their high cost and concerns about their integration onto solar panels. Spectrolab has now completed fabrication of solar panels with GaAs/Ge solar cells for a second space program. This paper will focus on the design, fabrication and test of GaAs/Ge solar panels for the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) Program.

Impact of sulfur content on structural and optical properties of Ge20Se80-xSx chalcogenide glasses thin films

NASA Astrophysics Data System (ADS)

Dongol, M.; Elhady, A. F.; Ebied, M. S.; Abuelwafa, A. A.

2018-04-01

Chalcogenide system Ge20Se80-xSx (x = 0, 15 and 30%) thin films were prepared by thermal evaporation technique. The amorphous state of the samples was confirmed according to XRD. The structural changes occurring upon replacement Se by S was investigated using Raman spectroscopy. The optical properties of the as-deposited Ge20Se80-xSx thin films have been studied by analysis the transmittance T(λ) measured at room temperature in the wavelength range 200-2500 nm using Swanepoel's method. Urbach energy (Ee) and optical band gap (Eg) were strongly affected by sulfur concentration in the sample. The refractive index evaluated through envelope method was extrapolated by Cauchy dispersion relationship over the whole spectral range. Moreover, the dispersion of refractive index was analyzed in terms of the single-oscillator Wemple-Di Domenico model. The third-order nonlinear susceptibility (χ(3)) and nonlinear refractive index (n2) were calculated and discussed for different Ge20Se80-xSx (x = 0, 15 and 30%).

Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

NASA Astrophysics Data System (ADS)

Trinh, Cham Thi; Nakagawa, Yoshihiko; Hara, Kosuke O.; Kurokawa, Yasuyoshi; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

2017-05-01

We have successfully grown a polycrystalline orthorhombic BaSi2 film on a Ge(100) substrate by an evaporation method. Deposition of an amorphous Si (a-Si) film on the Ge substrate prior to BaSi2 evaporation plays a critical role in obtaining a high-quality BaSi2 film. By controlling substrate temperature and the thickness of the a-Si film, a crack-free and single-phase polycrystalline orthorhombic BaSi2 film with a long carrier lifetime of 1.5 µs was obtained on Ge substrates. The photoresponse property of the ITO/BaSi2/Ge/Al structure was clearly observed, and photoresponsivity was found to increase with increasing substrate temperature during deposition of a-Si. Furthermore, the BaSi2 film grown on Ge showed a higher photoresponsivity than that grown on Si, indicating the potential application of evaporated BaSi2 on Ge to thin-film solar cells.

Segmented SiGe-PbTe couples

NASA Technical Reports Server (NTRS)

Eggers, P. E.; Mueller, J. J.

1969-01-01

New design of segmented couples incorporates an intermediate junction contacted by pressure, and eliminates transition members that bond materials differing in thermal expansion. Development of a reproducible and reliable intermediate junction between PbTe and SiGe will be applicable to direct conversion of energy.

Performance of Ge-Sb-Bi-Te-B Recording Media for Phase-Change Optical Disks

NASA Astrophysics Data System (ADS)

Lee, Chain-Ming; Yen, Wen-Shin; Liu, Ren-Haur; Chin, Tsung-Shune

2001-09-01

We investigated the physical properties of GeSbBiTeB materials and examined the feasibility for phase change recording. The studied compositions were Ge4Sb0.5Bi0.5Te5 and Ge2Sb1.5Bi0.5Te5 with B doping. The coexistence of Bi and B atoms into both Ge4SbTe5 and Ge2Sb2Te5 lattice maintains single fcc structure without phase separation. The Bi substitution shows benefits in decreasing crystallization temperature and activation energy, however the reflectivity is slightly reduced. 3 With small amount addition of boron about 1 at.%, the reflectivity can be increased. 2 Conventional 4-layer structure of digital versatile disk-random access memory (DVD-RAM) 2.6 GB format was used to prepare the disks for dynamic characterization and overwrite cyclability evaluations. The disk with Ge4Sb0.5Bi0.5Te5(B) recording layer shows large noise fluctuation and low overwrite erase ratio, suggesting that the crystallization speed is still insufficient. While the disk with Ge2Sb1.5Bi0.5Te5(B) recording layer shows lower writing and erasing powers, stable noise level and high overwrite erase ratio, indicating the capability for DVD-RAM applications. The effect of B doping was verified to enhance the signal amplitude and modulation.

Temperature-Dependent Electrical Conductivity of GeTe-Based RF Switches

DTIC Science & Technology

2015-03-31

Short, high temperature pulses result in a melt -quench cycle, amorphizing the GeTe and leaving the switch in the electrically insulating OFF state...Longer, lower temperature pulses result in the recrystallization of the GeTe, leaving the switch in the electrically conductive ON state. The...shown to vary only weakly with temperature. OFF-state S-parameters also exhibit slight temperature variation, with an inflection point of ~175

Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woodbridge, K.; Blood, P.; Fletcher, E.D.

1984-07-01

GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 A have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25-A wells some evidence of coupling was apparent when barrier widths were reduced to 40 A. For devices with 80-A barriers there is a difference of about 20 nm between the calculated n = 1 (e--hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurementsmore » on the same structures.« less

Local structure of Ge2Sb2Te5 during crystallization under pressure

NASA Astrophysics Data System (ADS)

Roscioni, O. M.; Branicio, P. S.; Kalikka, J.; Zhou, X.; Simpson, R. E.

2018-04-01

The role of stress on the crystallization process of the phase change data storage material, Ge2Sb2Te5, is studied. When thin Ge2Sb2Te5 films are capped with Si3N4, stress is generated in the Ge2Sb2Te5 layer which causes the crystallization temperature to increase. Si3N4 films of 25 nm thickness increase the crystallization temperature from 446 K to 464 K. We show that stress predominantly destabilizes voids and increases the number of Ge-Sb and homopolar bonds in the vicinity of Ge atoms, and this makes the crystallization less probable, thus resulting in the increase in the measured temperature.

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.

2016-11-15

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electronmore » mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.« less

A spectroscopic ellispometric study of the tunability of the optical constants and thickness of GeO{sub x} films with swift heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayarangamuthu, K.; Singh, Chaman; Rath, Shyama

2011-09-15

Sub-stoichiometric GeO{sub x} films were fabricated by electron-beam evaporation method. The films were irradiated with 100 MeV Ag{sup 7+} ions at fluences between 1 x 10{sup 12} and 1 x 10{sup 14} ions-cm{sup -2}. Spectroscopic ellipsometric measurements were performed in air at room temperature. The values of the layer thickness and refractive index were extracted from ellipsometry using a multilayer analysis and the Tauc Lorentz model. The refractive index (at 633 nm) of the as-deposited GeO{sub x} film was estimated to be 1.860 and decreased to 1.823 for films irradiated at an ion fluence of 1 x 10{sup 14} ions-cm{supmore » -2}. The thickness of the films also decreased after irradiation and is due to a sputtering induced by the ion beam. The change in the refractive index with ion fluence is attributed to a stoichiometric change and structural transformation represented by GeO{sub x}{yields} Ge + GeO{sub y} (y > x) occurring due to a thermal spike induced by ion irradiation. Swift heavy ions thus provide a scope for modulating the refractive index of GeO{sub x} films. The thickness and stoichiometric changes are supported by Rutherford backscattering measurements.« less

Characterizations of the TiO2-x films synthesized by e-beam evaporation for endovascular applications

NASA Astrophysics Data System (ADS)

Lin, Zeng; Lee, In-Seop; Choi, Yoon-Jeong; Noh, In-Sup; Chung, Sung-Min

2009-02-01

Different chemical states of titanium oxide films were deposited on commercially pure Ti (CP Ti) by electron-beam evaporation at different oxygen flow rates to examine a possibility of their applications to endovascular stents. The surface morphology, chemical composition and crystal structure of the obtained titanium oxide films were analyzed by FE-SEM, XPS and XRD, respectively. As a function of the deposition parameters employed, the obtained titanium oxide films demonstrated different mixtures of anatase phase, Ti2O3 and TiO. By the formation of titanium oxide film on the CP Ti plate, the contact angle was decreased and the cellular activity of porcine aortic smooth muscle cells was increased. Post-deposition annealing was also found to be an important factor to achieve advantageous biocompatibility. When haemocompatibility was investigated by observing adhesion of blood platelets from platelet-rich plasma, less platelet adhesion was observed on titanium oxide films. These results indicated that titanium oxide film synthesized by e-beam evaporation could be applicable to coronary stents.

Design of an optimised readout architecture for phase-change probe memory using Ge2Sb2Te5 media

NASA Astrophysics Data System (ADS)

Wang, Lei; Wright, C. David; Aziz, Mustafa M.; Yang, Ci-Hui; Yang, Guo-Wei

2014-02-01

Phase-change probe memory has recently received considerable attention on its writing performance, while its readout performance is rarely evaluated. Therefore, a three-dimensional readout model has been developed for the first time to calculate the reading contrast by varying the electrical conductivities and the thickness of the capping and under layers as well as the thickness of the Ge2Sb2Te5 layer. It is found that a phase-change probe architecture, consisting of a 10 nm Ge2Sb2Te5 layer sandwiched by a 2 nm, 50 Ω-1 m-1 capping layer and a 40 nm, 5 × 106 Ω-1 m-1 under layer, has the capability of providing the optimal readout performance.

Nanoscale amorphization of GeTe nanowire with conductive atomic force microscope.

PubMed

Kim, JunHo

2014-10-01

We fabricated GeTe nanowires by using Au catalysis mediated vapor-liquid-solid method. The fabricated nanowires were confirmed by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. For a nanowire with - 150 nm diameter, we performed amorphization experiment with conductive atomic force microscope. We examined the structural change of the nanowire with several bias voltages from 0 V to 10 V. Above bias voltage of 6-7 V, some points of the nanowire showed transition to amorphous phase. The consumed energy for the amorphization was estimated to be 4-5 nJ, which was close to the other result of nanowire tested with a four probe device.

50 CFR 80.10 - State certification of licenses.

Code of Federal Regulations, 2010 CFR

2010-10-01

... (CONTINUED) FINANCIAL ASSISTANCE-WILDLIFE SPORT FISH RESTORATION PROGRAM ADMINISTRATIVE REQUIREMENTS, PITTMAN-ROBERTSON WILDLIFE RESTORATION AND DINGELL-JOHNSON SPORT FISH RESTORATION ACTS § 80.10 State certification... allows the licensee to hunt or fish for sport or recreation. The State may not count persons holding a...

Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates

NASA Astrophysics Data System (ADS)

Jacobs, R. N.; Jaime Vasquez, M.; Lennon, C. M.; Nozaki, C.; Almeida, L. A.; Pellegrino, J.; Arias, J.; Taylor, C.; Wissman, B.

2015-09-01

Infrared focal plane arrays (IRFPA) based on HgCdTe semiconductor alloys have been shown to be ideal for tactical and strategic applications. High density (>1 M pixel), high operability HgCdTe detectors on large area, low-cost composite substrates, such as CdTe-buffered Si or GaAs, are envisioned for next-generation IRFPAs. Thermal expansion mismatch is among various material parameters that govern the structural properties of the final detector layer. It has previously been shown that thermal expansion mismatch plays the dominant role in the residual stress characteristics of these heteroepitaxial structures (Jacobs et al. in J Electron Mater 37:1480, 2008). The wafer curvature (bowing) resulting from residual stress, is a likely source of problems that may occur during subsequent processing. This includes cracking of the film and substrate during post-growth annealing processes or even certain characterization techniques. In this work, we examine dynamic curvature and stress during molecular beam epitaxy (MBE), of CdTe on Si and GaAs substrates. The effect of temperature changes on wafer curvature throughout the growth sequence is documented using a multi-beam optical sensor developed by K-Space Associates. This monitoring technique makes possible the study of growth sequences which employ annealing schemes and/or interlayers to influence the final residual stress state of the heteroepitaxial structures.

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

2015-07-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

CHROMOSPHERIC EVAPORATION IN AN X1.0 FLARE ON 2014 MARCH 29 OBSERVED WITH IRIS AND EIS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y.; Ding, M. D.; Qiu, J.

Chromospheric evaporation refers to dynamic mass motions in flare loops as a result of rapid energy deposition in the chromosphere. These motions have been observed as blueshifts in X-ray and extreme-ultraviolet (EUV) spectral lines corresponding to upward motions at a few tens to a few hundreds of km s{sup −1}. Past spectroscopic observations have also revealed a dominant stationary component, in addition to the blueshifted component, in emission lines formed at high temperatures (∼10 MK). This is contradictory to evaporation models predicting predominant blueshifts in hot lines. The recently launched Interface Region Imaging Spectrograph (IRIS) provides high-resolution imaging and spectroscopicmore » observations that focus on the chromosphere and transition region in the UV passband. Using the new IRIS observations, combined with coordinated observations from the EUV Imaging Spectrometer, we study the chromospheric evaporation process from the upper chromosphere to the corona during an X1.0 flare on 2014 March 29. We find evident evaporation signatures, characterized by Doppler shifts and line broadening, at two flare ribbons that are separating from each other, suggesting that chromospheric evaporation takes place in successively formed flaring loops throughout the flare. More importantly, we detect dominant blueshifts in the high-temperature Fe xxi line (∼10 MK), in agreement with theoretical predictions. We also find that, in this flare, gentle evaporation occurs at some locations in the rise phase of the flare, while explosive evaporation is detected at some other locations near the peak of the flare. There is a conversion from gentle to explosive evaporation as the flare evolves.« less

Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells.

PubMed

Lee, Ya-Ju; Yao, Yung-Chi; Tsai, Meng-Tsan; Liu, An-Fan; Yang, Min-De; Lai, Jiun-Tsuen

2013-11-04

A III-V multi-junction tandem solar cell is the most efficient photovoltaic structure that offers an extremely high power conversion efficiency. Current mismatching between each subcell of the device, however, is a significant challenge that causes the experimental value of the power conversion efficiency to deviate from the theoretical value. In this work, we explore a promising strategy using CdSe quantum dots (QDs) to enhance the photocurrent of the limited subcell to match with those of the other subcells and to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells. The underlying mechanism of the enhancement can be attributed to the QD's unique capacity for photon conversion that tailors the incident spectrum of solar light; the enhanced efficiency of the device is therefore strongly dependent on the QD's dimensions. As a result, by appropriately selecting and spreading 7 mg/mL of CdSe QDs with diameters of 4.2 nm upon the InGaP/GaAs/Ge solar cell, the power conversion efficiency shows an enhancement of 10.39% compared to the cell's counterpart without integrating CdSe QDs.

BOREAS TE-10 Photosynthetic Response Data

NASA Technical Reports Server (NTRS)

Hall, Forrest G. (Editor); Papagno, Andrea (Editor); Middleton, Elizabeth; Sullivan, Joseph

2000-01-01

The Boreal Ecosystem-Atmospheric Study (BOREAS) TE-10 (Terrestrial Ecology) team collected several data sets in support of its efforts to characterize and interpret information on the gas exchange, reflectance, transmittance, chlorophyll content, carbon content, hydrogen content, nitrogen content, and photosynthetic response of boreal vegetation. This data set contains measurements of quantitative parameters and leaf photosynthetic response to increases in light conducted in the SSA during the growing seasons of 1994 and 1996 using an oxygen electrode system. Leaf photosynthetic responses were not collected in 1996. The data are stored in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations

PubMed Central

Šedivý, L.; Čížek, J.; Belas, E.; Grill, R.; Melikhova, O.

2016-01-01

Positron annihilation spectroscopy (PAS) was used to examine the effect of defined Cd-rich and Te-rich annealing on point defects in Cl-doped CdTe and Ge-doped CdZnTe semi-insulating single crystals. The as-grown crystals contain open-volume defects connected with Cd vacancies . It was found that the Cd vacancies agglomerate into clusters coupled with Cl in CdTe:Cl, and in CdZnTe:Ge they are coupled with Ge donors. While annealing in Cd pressure reduces of the density, subsequent annealing in Te pressure restores . The CdTe:Cl contains negatively-charged shallow traps interpreted as Rydberg states of A-centres and representing the major positron trapping sites at low temperature. Positrons confined in the shallow traps exhibit lifetime, which is shorter than the CdTe bulk lifetime. Interpretation of the PAS data was successfully combined with electrical resistivity, Hall effect measurements and chemical analysis, and allowed us to determine the principal point defect densities. PMID:26860684

$$\\pi^0$$ Production with $K^-$ and $$\\pi^+$$ Beams at 530 GeV/c

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lanaro, Armando

1990-01-01

In thia theaia we report on measurements of inclusive neutral pion production at large transverse momenta (more » $$P_T$$) in collision of 530 GeV/c ($$\\sqrt{s}$$ = 31.5 GeV) $K^-$ and $$\\pi^+$$ beams with a copper and beryllium combined target. The $$\\pi^0$$ acceptance in center-of-mass rapidity is $$\\mid y \\mid$$ < 0.7, for $$P_T$$ values greater than 3.5 GeV/c (negative beam) and 4.25 GeV/c (positive beam). The data were taken using the large acceptance liquid argon calorimeter of the E706 spectrometer at Fermilab, and analyzed using the standard E706 reconstruction package. Ratios on $$\\pi^0$$ yields using $$\\pi^+, \\pi^-, K^-$$ and $p$ are presented. The results are used to examine issues of scaling in point-like hadronic collisions at high energies and large transverse momenta.« less

Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film.

PubMed

Huang, Ruomeng; Kissling, Gabriela P; Jolleys, Andrew; Bartlett, Philip N; Hector, Andrew L; Levason, William; Reid, Gillian; De Groot, C H 'Kees'

2015-12-01

We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.

Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

NASA Astrophysics Data System (ADS)

Huang, Ruomeng; Kissling, Gabriela P.; Jolleys, Andrew; Bartlett, Philip N.; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. `Kees'

2015-11-01

We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.

X-ray powder diffraction, spectroscopic study, dielectric properties and thermal analysis of new doped compound TiGa0.67Te2.33O8

NASA Astrophysics Data System (ADS)

Smaoui, S.; Ben Aribia, W.; Kabadou, A.; Abdelmouleh, M.

2017-04-01

A novel mixed valence tellurium oxide, TiGa0.67Te2.33O8, was synthesized and its crystal structure determined using the X-ray powder diffraction technique. The obtained oxide was found to crystallize in a cubic unit-cell, Ia 3 bar space group, with the lattice parameter a = 10.9557(1) Å. Rietveld refinement of the structure led to ultimate confidence factors Rp = 7.63 and Rwp = 6.71. This structure was based on slabs containing groups of (Te/Ga)O4 joined by the metal cations Ti4+. The structure analysis showed a cation ordering of Te4+ and Te6+ yielding a TiGa2/3Te7/3O8 formula. The IR and RAMAN spectra confirmed the presence of the TiO6 and (Te/Ga)O4 groups. The dielectric anomalies observed at 500 K were attributed to the mixed valence structure, arising from the mixed-valence Te6+/Te4+. We detected only one peak in thermal behavior by the DTA/TG analysis; which implied a melting reaction.

Measurement of inclusive muon pair production by 225-GeV/c. pi. /sup +/,. pi. /sup -/, and proton beams with a large acceptance spectrometers. [Cross sections, 225 GeV/c, tables

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brason, J G

1977-05-01

Inclusive muon pair production by 225 GeV/c ..pi../sup +/, ..pi../sup -/ and proton beams incident upon carbon and tin targets was measured over a large range of kinematic variables (2m/sub ..mu../ < m/sub ..mu mu.. < 1 GeV/c/sup 2/, 0 < x/sub F/ < 1, P/sub perpendicular to/ < 4 GeV/c and vertical bar cos theta* vertical bar < .3). The value of the invariant cross section E d/sup 4/sigma/dmdx/sub f/dp/sup 2//sub perpendicular to/ is presented as a function of these variables. The vector mesons rho, ..omega.., phi, J and psi' appear in the data along with apparently nonresonant ..mu..-pairs.more » By looking for additional muons accompanying J ..-->.. ..mu../sup +/..mu../sup -/ events, a 1.0% upper limit on production of pairs of charmed particles in association with the J is obtained. Aspects of the continuum muon pair data are compared to Drell-Yan model calculations. The ratio of ..mu..-pairs produced by ..pi../sup +/ beam particles to ..mu..-pairs produced by ..pi../sup -/ beam particles supports electromagnetic production at high mass.« less

Competing charge density wave and antiferromagnetism of metallic atom wires in GaN(10 1 ¯ ) and ZnO(10 1 ¯ )

NASA Astrophysics Data System (ADS)

Kang, Yoon-Gu; Kim, Sun-Woo; Cho, Jun-Hyung

2017-12-01

Low-dimensional electron systems often show a delicate interplay between electron-phonon and electron-electron interactions, giving rise to interesting quantum phases such as the charge density wave (CDW) and magnetism. Using the density-functional theory (DFT) calculations with the semilocal and hybrid exchange-correlation functionals as well as the exact-exchange plus correlation in the random-phase approximation (EX + cRPA), we systematically investigate the ground state of the metallic atom wires containing dangling-bond (DB) electrons, fabricated by partially hydrogenating the GaN(10 1 ¯0 ) and ZnO(10 1 ¯0 ) surfaces. We find that the CDW or antiferromagnetic (AFM) order has an electronic energy gain due to a band-gap opening, thereby being more stabilized compared to the metallic state. Our semilocal DFT calculation predicts that both DB wires in GaN(10 1 ¯0 ) and ZnO(10 1 ¯0 ) have the same CDW ground state, whereas the hybrid DFT and EX + cRPA calculations predict the AFM ground state for the former DB wire and the CDW ground state for the latter one. It is revealed that more localized Ga DB electrons in GaN(10 1 ¯0 ) prefer the AFM order, while less localized Zn DB electrons in ZnO(10 1 ¯0 ) the CDW formation. Our findings demonstrate that the drastically different ground states are competing in the DB wires created on the two representative compound semiconductor surfaces.

Mu2e upgrade physics reach optimization studies for the PIP-II era

DOE PAGES

Pronskikh, Vitaly S.; Glenzinski, Douglas; Mokhov, Nikolai; ...

2016-11-29

The Mu2e experiment at Fermilab is being designed to study the coherent neutrino-less conversion of a negative muon into an electron in the field of a nucleus. This process has an extremely low probability in the Standard Model and its observation would provide unambiguous evidence for BSM physics. The Mu2e design aims to reach a single-event-sensitivity of about 2.5 x 10 -17 and will probe effective new physics mass scales in the 10 3 -10 4 TeV range, well beyond the reach of the LHC. This work examines the maximum beam power that can be tolerated for beam energies inmore » the 0.5-8 GeV range exploring variations in the geometry in the region of the production target using the MARS15 code. Lastly, this has implications for how the sensitivity might be further improved with a second generation experiment using an upgraded proton beam from the PIP-II project, which will be capable of providing MW beams to Fermilab experiments later in the next decade.« less

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

NASA Astrophysics Data System (ADS)

Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

2018-04-01

In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma

NASA Astrophysics Data System (ADS)

Shen, Lanlan; Song, Sannian; Song, Zhitang; Li, Le; Guo, Tianqi; Liu, Bo; Wu, Liangcai; Cheng, Yan; Feng, Songlin

2016-10-01

Recently, carbon-doped Ge2Sb2Te5 (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF4/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge2Sb2Te5 (GST) films are simultaneously studied for comparison. Compared with GST film, 10 % more CF4 is needed for high etch rate and 10% less CF4 for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF4 etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.

Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-10-01

We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity surface-emitting lasers (VCSELs). From these results, we determined that the ITO root-mean-square (RMS) roughness should be <1 nm to minimize scattering losses in VCSELs. Motivated by this requirement, we investigated the surface morphology and optoelectronic properties of electron-beam (e-beam) evaporated ITO films, as a function of substrate temperature and oxygen flow and pressure. The transparency and conductivity were seen to increase with increasing temperature. Decreasing the oxygen flow and pressure resulted in an increase in the transparency and resistivity. Neither the temperature, nor oxygen flow and pressure series on single-layer ITO films resulted in highly transparent and conductive films with <1 nm RMS roughness. To achieve <1 nm RMS roughness with good optoelectronic properties, a multi-layer ITO film was developed, utilizing a two-step temperature scheme. The optimized multi-layer ITO films had an RMS roughness of <1 nm, along with a high transparency (˜90% at 405 nm) and low resistivity (˜2 × 10-4 Ω-cm). This multi-layer ITO e-beam deposition technique is expected to prevent p-GaN plasma damage, typically observed in sputtered ITO films on p-GaN, while simultaneously reducing the threshold current density and increasing the differential efficiency of III-nitride VCSELs.

Rapid and multiband variability of the TeV bright active nucleus of the galaxy IC 310

DOE PAGES

Aleksić, J.; Antonelli, L. A.; Antoranz, P.; ...

2014-03-14

Recently the radio galaxy IC 310 was identified as a γ-ray emitter based on observations at GeV energies with Fermi-LAT and at very high energies (VHE, E > 100 GeV) with the MAGIC telescopes. Originally classified as a head-tail radio galaxy, the nature of this object is subject of controversy since its nucleus shows blazar-like behavior. In order to understand the nature of IC 310 and the origin of the VHE emission, we studied the spectral and flux variability of IC 310 from the X-ray band to the VHE γ-ray regime. The light curve of IC 310 above 300 GeVmore » has been measured with the MAGIC telescopes from 2009 October to 2010 February. Contemporaneous Fermi-LAT data (2008-2011) in the 10-500 GeV energy range were also analyzed. In the X-ray regime, archival observations from 2003 to 2007 with XMM-Newton, Chandra, and Swift-XRT in the 0.5-10 keV band were studied. The VHE light curve reveals several high-amplitude and short-duration flares. Day-to-day flux variability is clearly present (>5σ). The photon index between 120 GeV and 8 TeV remains at the value Γ ~ 2.0 during both low and high flux states. The VHE spectral shape does not show significant variability, whereas the flux at 1 TeV changes by a factor of ~7. Fermi-LAT detected only eight γ-ray events in the energy range 10 GeV–500 GeV in three years of observation. Moreover, the measured photon index of Γ = 1.3 ± 0.5 in the Fermi-LAT range is very hard. The X-ray measurements show strong variability in both flux and photon index. The latter varied from 1.76 ± 0.07 to 2.55 ± 0.07. The rapid variability measured in γ-rays and X-rays confirms the blazar-like behavior of IC 310. The multi-TeV γ-ray emission seems to originate from scales of less than 80 Schwarzschild radii (for a black hole mass of 2 × 10 8 M⊙) within the compact core of its FR I radio jet with orientation angle 10°-38°. The spectral energy distribution resembles that of an extreme blazar, albeit the luminosity is more than

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

PubMed Central

Hudait, Mantu K.; Clavel, Michael; Goley, Patrick; Jain, Nikhil; Zhu, Yan

2014-01-01

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm2/Vs at 290 K and 457 cm2/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications. PMID:25376723

Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

NASA Astrophysics Data System (ADS)

Flores, Mauricio A.

2018-01-01

We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

NASA Astrophysics Data System (ADS)

Berthier, R.; Bernier, N.; Cooper, D.; Sabbione, C.; Hippert, F.; Noé, P.

2017-09-01

The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has been developed to improve sample quality and stability during in situ annealing, enabling quantitative analysis and live recording of phase change events. Results show that for an uncapped 100 nm thick GeTe layer, exposure to air after fabrication leads to composition changes which promote heterogeneous nucleation at the oxidized surface. We also demonstrate that protecting the GeTe layer with a 10 nm SiN capping layer prevents nucleation at the surface and allows volume nucleation at a temperature 50 °C higher than the onset of crystallization in the oxidized sample. Our results have important implications regarding the integration of these materials in confined memory cells.

What if GE^s is Zero? Implications for GM^s and GA^s

NASA Astrophysics Data System (ADS)

Schaub, John; Pate, Stephen

2008-04-01

Because strange quarks are the lightest quarks present in nucleons via only vacuum fluctuations, studying their activities in nucleons gives us insight to the vacuum's effects on nucleon properties. These contributions can be accessed through electroweak interactions---in particular through parity-violating eN and νN elastic scattering. Recent data from parity-violating eN elastic scattering (HAPPEX, PVA4) suggests that the strange contribution to the proton electric form factor, GE^s , may be nearly zero in the range 0 < Q^2 < 1 GeV^2. We assume that GE^s is small and use existing νN data to explore the consequences for GM^s and GA^s .

Discovery of Localized Regions of Excess 10-TeV Cosmic Rays

NASA Astrophysics Data System (ADS)

Abdo, A. A.; Allen, B.; Aune, T.; Berley, D.; Blaufuss, E.; Casanova, S.; Chen, C.; Dingus, B. L.; Ellsworth, R. W.; Fleysher, L.; Fleysher, R.; Gonzalez, M. M.; Goodman, J. A.; Hoffman, C. M.; Hüntemeyer, P. H.; Kolterman, B. E.; Lansdell, C. P.; Linnemann, J. T.; McEnery, J. E.; Mincer, A. I.; Nemethy, P.; Noyes, D.; Pretz, J.; Ryan, J. M.; Parkinson, P. M. Saz; Shoup, A.; Sinnis, G.; Smith, A. J.; Sullivan, G. W.; Vasileiou, V.; Walker, G. P.; Williams, D. A.; Yodh, G. B.

2008-11-01

The 7 year data set of the Milagro TeV observatory contains 2.2×1011 events of which most are due to hadronic cosmic rays. These data are searched for evidence of intermediate scale structure. Excess emission on angular scales of ˜10° has been found in two localized regions of unknown origin with greater than 12σ significance. Both regions are inconsistent with pure gamma-ray emission with high confidence. One of the regions has a different energy spectrum than the isotropic cosmic-ray flux at a level of 4.6σ, and it is consistent with hard spectrum protons with an exponential cutoff, with the most significant excess at ˜10TeV. Potential causes of these excesses are explored, but no compelling explanations are found.

Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET).

PubMed

Seo, Jae Hwa; Yoon, Young Jun; Kang, In Man

2018-09-01

The Ge/GaAs-based heterojunction gate-all-around (GAA) arch-shaped tunneling field-effect transistor (A-TFET) have been designed and optimized using technology computer-aided design (TCAD) simulations. In our previous work, the silicon-based A-TFET was designed and demonstrated. However, to progress the electrical characteristics of A-TFET, the III-V compound heterojunction structures which has enhanced electrical properties must be adopted. Thus, the germanium with gallium arsenide (Ge/GaAs) is considered as key materials of A-TFET. The proposed device has a Ge-based p-doped source, GaAs-based i-doped channel and GaAs-based n-doped drain. Due to the critical issues of device performances, the doping concentration of source and channel region (Dsource, Dchannel), height of source region (Hsource) and epitaxially grown thickness of channel (tepi) was selected as design optimization variables of Ge/GaAs-based GAA A-TFET. The DC characteristics such as on-state current (ion), off-state current (ioff), subthreshold-swing (S) were of extracted and analyzed. Finally, the proposed device has a gate length (LG) of 90 nm, Dsource 5 × 1019 cm-3, Dchannel of 1018 cm-3, tepi of 4 nm, Hsource of 90 nm, R of 10 nm and demonstrate an ion of 2 mA/μm, S of 12.9 mV/dec.

Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures

NASA Astrophysics Data System (ADS)

Haight, R.; Silberman, J. A.

1990-10-01

Using angle-resolved picosecond laser photoemission we have investigated both occupied and transiently excited empty states at the surface of Ge grown epitaxially on GaAs(110). We observe a normally unoccupied, Ge layer derived state whose separation from the valence-band maximum of the system is 700±50 meV at six monolayers Ge coverage. The evolution of the electronic structure is followed as a function of coverage and correlated with low-energy electron diffraction. The time dependence of the transiently occupied Ge signal is compared with that of the clean GaAs(110) surface and shows that electrons are prevented from diffusing into the GaAs bulk by the conduction-band offset of 330±40 meV.

Rugged spin-polarized electron sources based on negative electron affinity GaAs photocathode with robust Cs2Te coating

NASA Astrophysics Data System (ADS)

Bae, Jai Kwan; Cultrera, Luca; DiGiacomo, Philip; Bazarov, Ivan

2018-04-01

Photocathodes capable of providing high intensity and highly spin-polarized electron beams with long operational lifetimes are of great interest for the next generation nuclear physics facilities like Electron Ion Colliders. We report on GaAs photocathodes activated by Cs2Te, a material well known for its robustness. GaAs activated by Cs2Te forms Negative Electron Affinity, and the lifetime for extracted charge is improved by a factor of 5 compared to that of GaAs activated by Cs and O2. The spin polarization of photoelectrons was measured using a Mott polarimeter and found to be independent from the activation method, thereby shifting the paradigm on spin-polarized electron sources employing photocathodes with robust coatings.

Development of Si/SiGe heterostructures

NASA Astrophysics Data System (ADS)

Hauenstein, R. J.; Veteran, J. L.; Young, M. H.

1991-01-01

New molecular beam epitaxy (MBE) materials growth and doping processes were developed for the fabrication of Si/SiGe heterostructure devices. These new materials processes are applied to the demonstration of cryogenic n-p-n Si/Si 1-x Gex/Si heterojunction bipolar transistors (HBT). This application has special significance as an enabling DoD technology for fast low noise, high performance readout and signal processing circuits for IR focal systems. Reliable, versatile methods were developed to grow very high quality Si/SiGe strained layer heterostructures and multilayers. In connection with this program methods were developed to dope the Si and SiGe with B, Sb and Ga. B and Sb were found to be the preferred dopants for p and n regions respectively, of the HBT devices. The test devices clearly displayed gain enhancement due to the heterojunction and provided useful gains from room temperature down to 10 K.

First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

NASA Astrophysics Data System (ADS)

Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

2015-05-01

First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

NASA Technical Reports Server (NTRS)

Ma, Zhenqiang; Jiang, Ningyue; Ponchak, George E.; Alterovitz, Samuel A.

2005-01-01

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Fiber sensor on the basis of Ge26As17Se25Te32 glass for FEWS analysis

NASA Astrophysics Data System (ADS)

Velmuzhov, A. P.; Shiryaev, V. S.; Sukhanov, M. V.; Kotereva, T. V.; Churbanov, M. F.; Zernova, N. S.; Plekhovich, A. D.

2018-01-01

The high-purity Ge26As17Se25Te32 glass sample was prepared by chemical distillation purification method. This glass is characterized by high value of glass transition temperature (263°С), high optical transparency in the spectral range of 2-10 μm, and low content of residual impurities. The Ge26As17Se25Te32 glass rods were drawn into single-index fibers using the "rod" method and the single crucible technique. The optical losses in the 400 μm diameter fiber, fabricated by the "rod" method, were within 0.3-1 dB/m in the spectral range 5.2-9.3 μm. The minimum optical losses in the 320 μm diameter fiber, fabricated by the "crucible" technique, were 1.6-1.7 dB/m in the spectral range 6-8.5 μm. Using these Ge26As17Se25Te32 glass fibers as a sensor, the aqueous solutions of acetone (0-20 mol.%) and ethanol (0-90 mol.%) were analyzed by fiber evanescent wave spectroscopy. Peculiarities in the change of the integrated intensity and spectral position of absorption bands of these organic substances in dependence on the analyte composition and the length of the sensitive zone were established.

Characterization testing of MEASAT GaAs/Ge solar cell assemblies

NASA Technical Reports Server (NTRS)

Brown, Mike R.; Garcia, Curtis A.; Goodelle, George S.; Powe, Joseph S.; Schwartz, Joel A.

1996-01-01

The first commercial communications satellite with gallium-arsenide on germanium (GaAs/Ge) solar arrays is scheduled for launch in December 1995. The spacecraft, named MEASAT, was built by Hughes Space and Communications Company. The solar cell assemblies consisted of large area GaAs/Ge cells supplied by Spectrolab Inc. with infrared reflecting (IRR) coverglass supplied by Pilkington Space Technology. A comprehensive characterization program was performed on the GaAs/Ge solar cell assemblies used on the MEASAT array. This program served two functions; first to establish the database needed to accurately predict on-orbit performance under a variety of conditions; and second, to demonstrate the ability of the solar cell assemblies to withstand all mission environments while still providing the required power at end-of-life. Characterization testing included measurement of electrical performance parameters as a function of radiation exposure, temperature, and angle of incident light; reverse bias stability; optical and thermal properties; mechanical strength tests, panel fabrication, humidity and thermal cycling environmental tests. The results provided a complete database enabling the design of the MEASAT solar array, and demonstrated that the GaAs/Ge cells meet the spacecraft requirements at end-of-life.

Observation of polyamorphism in the phase change alloy Ge1Sb2Te4

NASA Astrophysics Data System (ADS)

Kalkan, B.; Sen, S.; Cho, J.-Y.; Joo, Y.-C.; Clark, S. M.

2012-10-01

A high-pressure synchrotron x-ray diffraction study of the phase change alloy Ge1Sb2Te4 demonstrates the existence of a polyamorphic phase transition between the "as deposited" low density amorphous (LDA) phase and a high density amorphous (HDA) phase at ˜10 GPa. The entropy of the HDA phase is expected to be higher than that of the LDA phase resulting in a negative Clapeyron slope for this transition. These phase relations may enable the polyamorphic transition to play a role in the memory and data storage applications.

Local electrical characterization of laser-recorded phase-change marks on amorphous Ge2Sb2Te5 thin films.

PubMed

Chang, Chia Min; Chu, Cheng Hung; Tseng, Ming Lun; Chiang, Hai-Pang; Mansuripur, Masud; Tsai, Din Ping

2011-05-09

Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a thin-film gold electrode, are investigated for the purpose of understanding the local electrical conductivity of recorded marks under the influence of focused laser beam. Being amorphous, the as-deposited chalcogenide films have negligible electrical conductivity. With the aid of a focused laser beam, however, we have written on these films micron-sized crystalline marks, ablated holes surrounded by crystalline rings, and other multi-ring structures containing both amorphous and crystalline zones. Within these structures, nano-scale regions of superior local conductivity have been mapped and probed using our high-resolution, high-sensitivity conductive-tip atomic force microscope (C-AFM). Scanning electron microscopy and energy-dispersive spectrometry have also been used to clarify the origins of high conductivity in and around the recorded marks. When the Ge(2)Sb(2)Te(5) layer is sufficiently thin, and when laser crystallization/ablation is used to define long isolated crystalline stripes on the samples, we find the C-AFM-based method of extracting information from the recorded marks to be superior to other forms of microscopy for this particular class of materials. Given the tremendous potential of chalcogenides as the leading media candidates for high-density memories, local electrical characterization of marks recorded on as-deposited amorphous Ge(2)Sb(2)Te(5) films provides useful information for furthering research and development efforts in this important area of modern technology. © 2011 Optical Society of America

9 GeV energy gain in a beam-driven plasma wakefield accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litos, M.; Adli, E.; Allen, J. M.

2016-02-15

An electron beam has gained a maximum energy of 9 GeV per particle in a 1.3 m-long electron beam-driven plasma wakefield accelerator. The amount of charge accelerated in the spectral peak was 28.3 pC, and the root-mean-square energy spread was 5.0%. The mean accelerated charge and energy gain per particle of the 215 shot data set was 115 pC and 5.3 GeV, respectively, corresponding to an acceleration gradient of 4.0 GeV m -1 at the spectral peak. Moreover, the mean energy spread of the data set was 5.1%. Our results are consistent with the extrapolation of the previously reported energymore » gain results using a shorter, 36 cm-long plasma source to within 10%, evincing a non-evolving wake structure that can propagate distances of over a meter in length. Wake-loading effects were evident in the data through strong dependencies observed between various spectral properties and the amount of accelerated charge.« less

Search for Strange Pentaquark Production in e{sup +}e{sup -} Annihilations at {radical}s=10.5 GeV and in {Upsilon}(4S) Decays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aubert, B

2004-08-16

The authors present a preliminary inclusive search for strange pentaquark production in e{sup +}e{sup -} interactions at a center-of-mass energy of 10.58 GeV using 123 fb{sup -1} of data collected with the BABAR detector. They look for the states that have been reported previously: the {Theta}{sup +}(1540), interpreted as a udud{bar s} state; and the {Xi}{sup --}(1860) and {Xi}{sup 0}(1860), candidate dsds{bar u} and uss(u{bar u} + d{bar d}) states, respectively. In addition they search for other members of the antidecuplet and corresponding octet to which these states are thought to belong. They find no evidence for the production ofmore » such states and set preliminary limits on their production cross sections as functions of c.m. momentum. The corresponding limits on the {Theta}{sup +}(1540) and {Xi}{sup --}(1860) rates per e{sup +}e{sup -} --> q{bar q} event are well below the rates measured for ordinary baryons of similar mass.« less

Backward electroproduction of π0 mesons on protons in the region of nucleon resonances at four momentum transfer squared Q2 =1.0 GeV2

NASA Astrophysics Data System (ADS)

Laveissière, G.; Degrande, N.; Jaminion, S.; Jutier, C.; Todor, L.; di Salvo, R.; van Hoorebeke, L.; Alexa, L. C.; Anderson, B. D.; Aniol, K. A.; Arundell, K.; Audit, G.; Auerbach, L.; Baker, F. T.; Baylac, M.; Berthot, J.; Bertin, P. Y.; Bertozzi, W.; Bimbot, L.; Boeglin, W. U.; Brash, E. J.; Breton, V.; Breuer, H.; Burtin, E.; Calarco, J. R.; Cardman, L. S.; Cavata, C.; Chang, C.-C.; Chen, J.-P.; Chudakov, E.; Cisbani, E.; Dale, D. S.; de Jager, C. W.; de Leo, R.; Deur, A.; D'Hose, N.; Dodge, G. E.; Domingo, J. J.; Elouadrhiri, L.; Epstein, M. B.; Ewell, L. A.; Finn, J. M.; Fissum, K. G.; Fonvieille, H.; Fournier, G.; Frois, B.; Frullani, S.; Furget, C.; Gao, H.; Gao, J.; Garibaldi, F.; Gasparian, A.; Gilad, S.; Gilman, R.; Glamazdin, A.; Glashausser, C.; Gomez, J.; Gorbenko, V.; Grenier, P.; Guichon, P. A.; Hansen, J. O.; Holmes, R.; Holtrop, M.; Howell, C.; Huber, G. M.; Hyde-Wright, C. E.; Incerti, S.; Iodice, M.; Jardillier, J.; Jones, M. K.; Kahl, W.; Kamalov, S.; Kato, S.; Katramatou, A. T.; Kelly, J. J.; Kerhoas, S.; Ketikyan, A.; Khayat, M.; Kino, K.; Kox, S.; Kramer, L. H.; Kumar, K. S.; Kumbartzki, G.; Kuss, M.; Leone, A.; Lerose, J. J.; Liang, M.; Lindgren, R. A.; Liyanage, N.; Lolos, G. J.; Lourie, R. W.; Madey, R.; Maeda, K.; Malov, S.; Manley, D. M.; Marchand, C.; Marchand, D.; Margaziotis, D. J.; Markowitz, P.; Marroncle, J.; Martino, J.; McCormick, K.; McIntyre, J.; Mehrabyan, S.; Merchez, F.; Meziani, Z. E.; Michaels, R.; Miller, G. W.; Mougey, J. Y.; Nanda, S. K.; Neyret, D.; Offermann, E. A.; Papandreou, Z.; Perdrisat, C. F.; Perrino, R.; Petratos, G. G.; Platchkov, S.; Pomatsalyuk, R.; Prout, D. L.; Punjabi, V. A.; Pussieux, T.; Quémenér, G.; Ransome, R. D.; Ravel, O.; Real, J. S.; Renard, F.; Roblin, Y.; Rowntree, D.; Rutledge, G.; Rutt, P. M.; Saha, A.; Saito, T.; Sarty, A. J.; Serdarevic, A.; Smith, T.; Smirnov, G.; Soldi, K.; Sorokin, P.; Souder, P. A.; Suleiman, R.; Templon, J. A.; Terasawa, T.; Tiator, L.; Tieulent, R.; Tomasi-Gustaffson, E.; Tsubota, H.; Ueno, H.; Ulmer, P. E.; Urciuoli, G. M.; van de Vyver, R.; van der Meer, R. L.; Vernin, P.; Vlahovic, B.; Voskanyan, H.; Voutier, E.; Watson, J. W.; Weinstein, L. B.; Wijesooriya, K.; Wilson, R.; Wojtsekhowski, B. B.; Zainea, D. G.; Zhang, W.-M.; Zhao, J.; Zhou, Z.-L.

2004-04-01

Exclusive electroproduction of π0 mesons on protons in the backward hemisphere has been studied at Q2 =1.0 GeV2 by detecting protons in the forward direction in coincidence with scattered electrons from the 4 GeV electron beam in Jefferson Lab’s Hall A. The data span the range of the total ( γ*p ) center-of-mass energy W from the pion production threshold to W=2.0 GeV . The differential cross sections σT +ɛ σL , σTL , and σTT were separated from the azimuthal distribution and are presented together with the MAID and SAID parametrizations.

Production status of GaAs/Ge solar cells and panels

NASA Technical Reports Server (NTRS)

Smith, B.; Gillanders, M.; Vijayakumar, P.; Lillington, D.; Yang, H.; Rolph, R.

1991-01-01

GaAs/Ge solar cells with lot average efficiencies in excess of 18 percent were produced by MOCVD growth techniques. A description of the cell, its performance and the production facility are discussed. Production GaAs/Ge cells of this type were recently assembled into circuits and bonded to aluminum honeycomb panels to be used as the solar array for the British UOSAT-F program.

Production status of GaAs/Ge solar cells and panels

NASA Astrophysics Data System (ADS)

Smith, B.; Gillanders, M.; Vijayakumar, P.; Lillington, D.; Yang, H.; Rolph, R.

1991-08-01

GaAs/Ge solar cells with lot average efficiencies in excess of 18 percent were produced by MOCVD growth techniques. A description of the cell, its performance and the production facility are discussed. Production GaAs/Ge cells of this type were recently assembled into circuits and bonded to aluminum honeycomb panels to be used as the solar array for the British UOSAT-F program.

Prospects of e-beam evaporated molybdenum oxide as a hole transport layer for perovskite solar cells

NASA Astrophysics Data System (ADS)

Ali, F.; Khoshsirat, N.; Duffin, J. L.; Wang, H.; Ostrikov, K.; Bell, J. M.; Tesfamichael, T.

2017-09-01

Perovskite solar cells have emerged as one of the most efficient and low cost technologies for delivering of solar electricity due to their exceptional optical and electrical properties. Commercialization of the perovskite solar cells is, however, limited because of the higher cost and environmentally sensitive organic hole transport materials such as spiro-OMETAD and PEDOT:PSS. In this study, an empirical simulation was performed using the Solar Cell Capacitance Simulator software to explore the MoOx thin film as an alternative hole transport material for perovskite solar cells. In the simulation, properties of MoOx thin films deposited by the electron beam evaporation technique from high purity (99.99%) MoO3 pellets at different substrate temperatures (room temperature, 100 °C and 200 °C) were used as input parameters. The films were highly transparent (>80%) and have low surface roughness (≤2 nm) with bandgap energy ranging between 3.75 eV and 3.45 eV. Device simulation has shown that the MoOx deposited at room temperature can work in both the regular and inverted structures of the perovskite solar cell with a promising efficiency of 18.25%. Manufacturing of the full device is planned in order to utilize the MoOx as an alternative hole transport material for improved performance, good stability, and low cost of the perovskite solar cell.

The cosmic ray proton, helium and CNO fluxes in the 100 TeV energy region from TeV muons and EAS atmospheric Cherenkov light observations of MACRO and EAS-TOP

NASA Astrophysics Data System (ADS)

Aglietta, M.; Alessandro, B.; Antonioli, P.; Arneodo, F.; Bergamasco, L.; Bertaina, M.; Castagnoli, C.; Castellina, A.; Chiavassa, A.; Cini, G.; D'Ettorre Piazzoli, B.; Di Sciascio, G.; Fulgione, W.; Galeotti, P.; Ghia, P. L.; Iacovacci, M.; Mannocchi, G.; Morello, C.; Navarra, G.; Saavedra, O.; Stamerra, A.; Trinchero, G. C.; Valchierotti, S.; Vallania, P.; Vernetto, S.; Vigorito, C.; Ambrosio, M.; Antolini, R.; Baldini, A.; Barbarino, G. C.; Barish, B. C.; Battistoni, G.; Becherini, Y.; Bellotti, R.; Bemporad, C.; Bernardini, P.; Bilokon, H.; Bower, C.; Brigida, M.; Bussino, S.; Cafagna, F.; Calicchio, M.; Campana, D.; Carboni, M.; Caruso, R.; Cecchini, S.; Cei, F.; Chiarella, V.; Chiarusi, T.; Choudhary, B. C.; Coutu, S.; Cozzi, M.; De Cataldo, G.; Dekhissi, H.; De Marzo, C.; De Mitri, I.; Derkaoui, J.; De Vincenzi, M.; Di Credico, A.; Erriquez, O.; Favuzzi, C.; Forti, C.; Fusco, P.; Giacomelli, G.; Giannini, G.; Giglietto, N.; Giorgini, M.; Grassi, M.; Grillo, A.; Guarino, F.; Gustavino, C.; Habig, A.; Hanson, K.; Heinz, R.; Iarocci, E.; Katsavounidis, E.; Katsavounidis, I.; Kearns, E.; Kim, H.; Kyriazopoulou, S.; Lamanna, E.; Lane, C.; Levin, D. S.; Lipari, P.; Longley, N. P.; Longo, M. J.; Loparco, F.; Maaroufi, F.; Mancarella, G.; Mandrioli, G.; Margiotta, A.; Marini, A.; Martello, D.; Marzari-Chiesa, A.; Mazziotta, M. N.; Michael, D. G.; Monacelli, P.; Montaruli, T.; Monteno, M.; Mufson, S.; Musser, J.; Nicolò, D.; Nolty, R.; Orth, C.; Osteria, G.; Palamara, O.; Patera, V.; Patrizii, L.; Pazzi, R.; Peck, C. W.; Perrone, L.; Petrera, S.; Popa, V.; Rainò, A.; Reynoldson, J.; Ronga, F.; Satriano, C.; Scapparone, E.; Scholberg, K.; Sciubba, A.; Sioli, M.; Sirri, G.; Sitta, M.; Spinelli, P.; Spinetti, M.; Spurio, M.; Steinberg, R.; Stone, J. L.; Sulak, L. R.; Surdo, A.; Tarlé, G.; Togo, V.; Vakili, M.; Walter, C. W.; Webb, R.; EAS-TOP Collaboration

2004-06-01

The primary cosmic ray (CR) proton, helium and CNO fluxes in the energy range 80-300 TeV are studied at the National Gran Sasso Laboratories by means of EAS-TOP (Campo Imperatore, 2005 m a.s.l.) and MACRO (deep underground, 3100 m w.e., the surface energy threshold for a muon reaching the detector being Eμth≈1.3 TeV). The measurement is based on: (a) the selection of primaries based on their energy/nucleon (i.e., with energy/nucleon sufficient to produce a muon with energy larger than 1.3 TeV) and the reconstruction of the shower geometry by means of the muons recorded by MACRO in the deep underground laboratories; (b) the detection of the associated atmospheric Cherenkov light (C.l.) signals by means of the C.l. detector of EAS-TOP. The C.l. density at core distance r>100 m is directly related to the total primary energy E0. Proton and helium ("p + He") and proton, helium and CNO ("p + He + CNO") primaries are thus selected at E0≃80 TeV, and at E0≃250 TeV, respectively. Their flux is measured: J p+ He(80 TeV)=(1.8±0.4)×10 -6 m -2 s -1 sr -1 TeV -1, and J p+ He+ CNO(250 TeV)=(1.1±0.3)×10 -7 m -2 s -1 sr -1 TeV -1, their relative weights being: J p+ He/J p+ He+ CNO(250 TeV)=0.78±0.17 . By using the measurements of the proton spectrum obtained from the direct experiments and hadron flux data in the atmosphere, we obtain for the relative weights of the three components at 250 TeV: Jp: JHe: JCNO=(0.20±0.08):(0.58±0.19):(0.22±0.17). This corresponds to the dominance of helium over proton primaries at 100-1000 TeV, and a possible non-negligible contribution from CNO. The lateral distribution of Cherenkov light in Extensive Air Showers (EASs), which is related to the rate of energy deposit of the primary in the atmosphere, is measured for a selected proton and helium primary beam, and good agreement is found when compared with the one calculated with the CORSIKA/QGSJET simulation model.

Comparison of the Al back contact deposited by sputtering, e-beam, or thermal evaporation for inverted perovskite solar cells

NASA Astrophysics Data System (ADS)

Wahl, Tina; Hanisch, Jonas; Ahlswede, Erik

2018-04-01

In this work, we present inverted perovskite solar cells with Al top electrodes, which were deposited by three different methods. Besides the widely used thermal evaporation of Al, we also used the industrially important high deposition rate processes sputtering and electron beam evaporation for aluminium electrodes and examined the influence of the deposition method on the solar cell performance. The current-voltage characteristics of as grown solar cells with sputtered and e-beam Al electrode show an s-shape due to damage done to the organic electronic transport layers (ETL) during Al deposition. It can be cured by a short annealing step at a moderate temperature so that fill factors  >60% and power conversion efficiencies of almost 12% with negligible hysteresis can be achieved. While solar cells with thermally evaporated Al electrode do not show an s-shape, they also exhibit a clear improvement after a short annealing step. In addition, we varied the thickness of the ETL consisting of a double layer ([6,6]-Phenyl-C61-butyric acid methyl ester and bathocuproine) and investigated the influence on the solar cell parameters for the three different Al deposition methods, which showed distinct dependencies on ETL thickness.

Flux threshold determination for tungsten nano-fuzz formation using an 80 eV He-ion beam

NASA Astrophysics Data System (ADS)

Meyer, Fred W.; Bannister, Mark E.; Parish, Chad M.

2017-10-01

At the ORNL Multicharged Ion Research Facility (MIRF), we have extended our investigation of flux thresholds for He-ion induced nano-fuzz formation on hot tungsten surfaces down to plasma-edge-relevant energies of 80 eV. We measured the size of the incident ion beam by accurate flux-profile measurements, and the size of the region where tungsten nano-fuzz was formed by post-exposure SEM surface analysis and real-time monitoring of the hot W surface-emissivity change throughout the beam exposure. If tungsten nano-fuzz formation had a fluence threshold, the size of the observed nano-fuzz region would be expected to increase with exposure time, eventually filling the entire ion beam spot. Instead, we found that the region of nano-fuzz formation (1) was always smaller than the beam spot itself and (2) did not increase in size with time, i.e. with accumulated He ion fluence. By comparison of the flux profile and the spatial extent of the fuzz region we determined a flux threshold of 9.5 +-3×1019/m2s at 80 eV He ion impact energy. We show that the observed flux-threshold energy dependence for nano-fuzz formation, which we have now mapped out from 80 eV to 8.5 keV, is well reproduced by the combined energy dependences of He-ion reflection, He-ion range and target-damage creation, determined using SRIM. Research sponsored by the LDRD program at ORNL, managed by UT-Battelle for the USDOE, and by the DOE OFES.

Search for anomalous deuterons in the reaction /sup 3/He+C. -->. d+X at p3He = 10. 8 GeV/c

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ableev, V.G.; Vorob'ev, G.G.; Gasparyan, A.P.

1985-07-01

The Alpha apparatus in a beam of 10.78-GeV/c /sup 3/He nuclei has been used to search for anomalous deuterons (demons) in the reaction /sup 3/He+C ..-->.. d+X. The deuteron yield was measured at angles theta< or approx. =20 mrad as a function of the target thickness, which varied from 0.6 to 70 cm. The data obtained exclude the production of demons in this reaction over a wide range of expected values of the cross sections for their production and interaction with matter. The technique used can be applied also to beams of relativistic nuclei in experiments to search for anomalons.

Crystallization kinetics of the phase change material GeSb 6Te measured with dynamic transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Winseck, M. M.; Cheng, H. -Y.; Campbell, G. H.

2016-03-30

GeSb 6Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb 6Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s –1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measuredmore » growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.« less

BOREAS TE-10 Leaf Gas Exchange Data

NASA Technical Reports Server (NTRS)

Hall, Forrest G. (Editor); Papagno, Andrea (Editor); Middleton, Elizabeth; Sullivan, Joseph

2000-01-01

The Boreal Ecosystem-Atmospheric Study (BOREAS) TE-10 (Terrestrial Ecology) team collected several data sets in support of its efforts to characterize and interpret information on the reflectance, transmittance, gas exchange, chlorophyll content, carbon content, hydrogen content, and nitrogen content of boreal vegetation. This data set contains measurements of assimilation, stomatal conductance, transpiration, internal CO2 concentration, and water use efficiency conducted in the Southern Study Area (SSA) during the growing seasons of 1994 and 1996 using a portable gas exchange system. The data are stored in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

Continuation of comprehensive quality control of the itG 68Ge/68Ga generator and production of 68Ga-DOTATOC and 68Ga-PSMA-HBED-CC for clinical research studies.

PubMed

Amor-Coarasa, Alejandro; Kelly, James M; Gruca, Monika; Nikolopoulou, Anastasia; Vallabhajosula, Shankar; Babich, John W

2017-10-01

Performance of a second itG 68 Ge/ 68 Ga generator system and production of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC were tested over one year as an accompaniment to a previously published study (J Nucl Med. 2016;57:1402-1405). Performance of a 1951MBq 68 Ge/ 68 Ga generator was characterized and the eluate used for preparation of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC. Weekly elution profiles of 68 Ga elution yield and 68 Ge breakthrough were determined. 68 Ga elution yields averaged 82% (61.8-98.4%) and 68 Ge breakthrough averaged 0.002% (0.0007% to 0.004%). The radiochemical purities of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC were determined by HPLC analysis to be >98% and specific activity was 12.6 and 42GBq/μmol, respectively. 68 Ge contamination in the product was under the detection limit (0.00001%). Final sterile, pyrogen-free formulation of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC in physiologic saline with 5%-7% ethanol was achieved. Performance of a 68 Ge/ 68 Ga generator was studied over one year with satisfactory results. The generator eluate was used to synthesize 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC on a routine basis in high purity. Copyright © 2017. Published by Elsevier Inc.

Solid State Reaction of Thin Metal Films with MERCURY(1-X)CADMIUM(X)TELLURIDE.

NASA Astrophysics Data System (ADS)

Ehsani, Hassan

The solid state reactions of both e-beam evaporation and sputter deposition of thin layers of Cu, Co, and Ni onto CdTe and Hg_{0.8}Cd _{0.2}Te have been investigated using Transmission Electron Microscopy and Auger Electron Spectroscopy. For a Cu overlayer deposited by either method on CdTe(111) and Hg_{0.8}Cd _{0.2}Te substrates, we observed formation of a relatively thick region of Cu _{rm 2-x}Te (superlattice structure), even though the heat of reactions ( DeltaH_{rm R} ) are positive as calculated using bulk parameters. Deposition of Co onto Hg_{0.8 }Cd_{0.2}Te substrates reacted to form the gamma -phase (Co_3Te_4) at room temperature in the case of deposition by sputtering, and at 150^circC annealing temperature in the case of deposition by e-beam evaporation. This compound was stable at room and elevated temperatures (100 ^circC, 200^ circC, 300^circC, and 400^circC). On the other hand Co did not react with CdTe (at temperature less than 300^circC) instead, generation of Te was observed. The Te generated in the case of sputter deposition and fast deposition (8-10A) e-beam evaporation was polycrystalline whereas, in the case of slow deposition (0.3-0.5A) e-beam evaporation it was amorphous. Auger depth profile indicated that the amount of excess Te in the case of sputter deposition was larger in compared with deposition by e-beam evaporation. The excess Te was distributed throughout the Co film. The results of Ni deposited onto Hg_ {0.8}Cd_{0.2} Te or CdTe substrate were somewhat similar to the Co cases. Ni reacted with Hg_{0.8 }Cd_{0.2}Te at room temperature in either deposition system to form the delta-phase (NiTe-Ni _2Te). From the results of this work it is clear that the solid produced as a result of either e-beam or sputter deposition has a higher free energy than that of a metal layer on contact with the substrate. This result indicates importance of kinetics in the formation of the interface structure of metals deposited on Hg_{0.8 }Cd_{0.2}Te

Influence of the selenium content on thermo-mechanical and optical properties of Ge-Ga-Sb-S chalcogenide glasses

NASA Astrophysics Data System (ADS)

Ye, Bin; Dai, Shixun; Wang, Rongping; Tao, Guangming; Zhang, Peiqing; Wang, Xunsi; Shen, Xiang

2016-07-01

A number of Ge17Ga4Sb10S69-xSex (x = 0, 15, 30, 45, 60, and 69) chalcogenide glasses have been synthesized by a melt-quenching method to investigate the effect of the Se content on thermo-mechanical and optical properties of these glasses. While it was found that the glass transition temperature (Tg) decreases from 261 to 174 °C with increasing Se contents, crystallization temperature (Tc) peak only be observed in glasses with Se content of x = 45. It was evident from the measurements of structural and physical properties that changes of the glass network bring an apparent impact on the glass properties. Also, the substitution of Se for S in Ge-Ga-Sb glasses can significantly improve the thermal stability against crystallization and broaden the infrared transmission region.

Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

NASA Astrophysics Data System (ADS)

Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

2016-09-01

We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

Neutral Beam Source and Target Plasma for Development of a Local Electric Field Fluctuation Diagnostic

NASA Astrophysics Data System (ADS)

Bakken, M. R.; Burke, M. G.; Fonck, R. J.; Lewicki, B. T.; Rhodes, A. T.; Winz, G. R.

2016-10-01

A new diagnostic measuring local E-> (r , t) fluctuations is being developed for plasma turbulence studies in tokamaks. This is accomplished by measuring fluctuations in the separation of the π components in the Hα motional Stark spectrum. Fluctuations in this separation are expected to be Ẽ / ẼEMSE 10-3EMSE 10-3 . In addition to a high throughput, high speed spectrometer, the project requires a low divergence (Ω 0 .5°) , 80 keV, 2.5 A H0 beam and a target plasma test stand. The beam employs a washer-stack arc ion source to achieve a high species fraction at full energy. Laboratory tests of the ion source demonstrate repeatable plasmas with Te 10 eV and ne 1.6 ×1017 m-3, sufficient for the beam ion optics requirements. Te and ne scalings of the ion source plasma are presented with respect to operational parameters. A novel three-phase resonant converter power supply will provide 6 mA/cm2 of 80 keV H0 at the focal plane for pulse lengths up to 15 ms, with low ripple δV / 80 keV 0.05 % at 280 kHz. Diagnostic development and validation tests will be performed on a magnetized plasma test stand with 0.5 T field. The test chamber will utilize a washer-stack arc source to produce a target plasma comparable to edge tokamak plasmas. A bias-plate with programmable power supply will be used to impose Ẽ within the target plasma. Work supported by US DOE Grant DE-FG02-89ER53296.

Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications

NASA Astrophysics Data System (ADS)

Zhang, Lei; Niu, Pingjuan; Li, Yuqiang; Song, Minghui; Zhang, Jianxin; Ning, Pingfan; Chen, Peizhuan

2017-12-01

Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications were grown on 4 inch Ge substrates by metal organic chemical vapor deposition methods. The triple-junction solar cells were obtained by optimizing the subcell structure, showing a high open-circuit voltage of 2.77 V and a high conversion efficiency of 31% with 30.15 cm2 area under the AM0 spectrum at 25 °C. In addition, the In0.01Ga0.99As middle subcell structure was focused by optimizing in order to improve the anti radiation ability of triple-junction solar cells, and the remaining factor of conversion efficiency for middle subcell structure was enhanced from 84% to 92%. Finally, the remaining factor of external quantum efficiency for triple-junction solar cells was increased from 80% to 85.5%.

DAMPE prototype and its beam test results at CERN

NASA Astrophysics Data System (ADS)

Wu, Jian; Hu, Yiming; Chang, Jin

The first Chinese high energy cosmic particle detector(DAMPE) aims to detect electron/gamma at the range between 5GeV and 10TeV in space. A prototype of this detector is made and tested using both cosmic muons and test beam at CERN. Energy and space resolution as well as strong separation power for electron and proton are shown in the results. The detector structure is illustrated as well.

Search for stopped Gluinos in pp collisions at square root s=7 TeV.

PubMed

Khachatryan, V; Sirunyan, A M; Tumasyan, A; Adam, W; Bergauer, T; Dragicevic, M; Erö, J; Fabjan, C; Friedl, M; Frühwirth, R; Ghete, V M; Hammer, J; Hänsel, S; Hartl, C; Hoch, M; Hörmann, N; Hrubec, J; Jeitler, M; Kasieczka, G; Kiesenhofer, W; Krammer, M; Liko, D; Mikulec, I; Pernicka, M; Rohringer, H; Schöfbeck, R; Strauss, J; Taurok, A; Teischinger, F; Waltenberger, W; Walzel, G; Widl, E; Wulz, C-E; Mossolov, V; Shumeiko, N; Suarez Gonzalez, J; Benucci, L; Ceard, L; Cerny, K; De Wolf, E A; Janssen, X; Maes, T; Mucibello, L; Ochesanu, S; Roland, B; Rougny, R; Selvaggi, M; Van Haevermaet, H; Van Mechelen, P; Van Remortel, N; Adler, V; Beauceron, S; Blekman, F; Blyweert, S; D'Hondt, J; Devroede, O; Kalogeropoulos, A; Maes, J; Maes, M; Tavernier, S; Van Doninck, W; Van Mulders, P; Van Onsem, G P; Villella, I; Charaf, O; Clerbaux, B; De Lentdecker, G; Dero, V; Gay, A P R; Hammad, G H; Hreus, T; Marage, P E; Thomas, L; Vander Velde, C; Vanlaer, P; Wickens, J; Costantini, S; Grunewald, M; Klein, B; Marinov, A; Ryckbosch, D; Thyssen, F; Tytgat, M; Vanelderen, L; Verwilligen, P; Walsh, S; Zaganidis, N; Basegmez, S; Bruno, G; Caudron, J; De Favereau De Jeneret, J; Delaere, C; Demin, P; Favart, D; Giammanco, A; Grégoire, G; Hollar, J; Lemaitre, V; Liao, J; Militaru, O; Ovyn, S; Pagano, D; Pin, A; Piotrzkowski, K; Quertenmont, L; Schul, N; Beliy, N; Caebergs, T; Daubie, E; Alves, G A; De Jesus Damiao, D; Pol, M E; Souza, M H G; Carvalho, W; Da Costa, E M; De Oliveira Martins, C; Fonseca De Souza, S; Mundim, L; Nogima, H; Oguri, V; Prado Da Silva, W L; Santoro, A; Silva Do Amaral, S M; Sznajder, A; Torres Da Silva De Araujo, F; Dias, F A; Dias, M A F; Fernandez Perez, Tomei T R; Gregores, E M; Marinho, F; Novaes, S F; Padula, Sandra S; Darmenov, N; Dimitrov, L; Genchev, V; Iaydjiev, P; Piperov, S; Rodozov, M; Stoykova, S; Sultanov, G; Tcholakov, V; Trayanov, R; Vankov, I; Dyulendarova, M; Hadjiiska, R; Kozhuharov, V; Litov, L; Marinova, E; Mateev, M; Pavlov, B; Petkov, P; Bian, J G; Chen, G M; Chen, H S; Jiang, C H; Liang, D; Liang, S; Wang, J; Wang, J; Wang, X; Wang, Z; Xu, M; Yang, M; Zang, J; Zhang, Z; Ban, Y; Guo, S; Li, W; Mao, Y; Qian, S J; Teng, H; Zhu, B; Cabrera, A; Gomez Moreno, B; Ocampo Rios, A A; Osorio Oliveros, A F; Sanabria, J C; Godinovic, N; Lelas, D; Lelas, K; Plestina, R; Polic, D; Puljak, I; Antunovic, Z; Dzelalija, M; Brigljevic, V; Duric, S; Kadija, K; Morovic, S; Attikis, A; Fereos, R; Galanti, M; Mousa, J; Nicolaou, C; Ptochos, F; Razis, P A; Rykaczewski, H; Assran, Y; Mahmoud, M A; Hektor, A; Kadastik, M; Kannike, K; Müntel, M; Raidal, M; Rebane, L; Azzolini, V; Eerola, P; Czellar, S; Härkönen, J; Heikkinen, A; Karimäki, V; Kinnunen, R; Klem, J; Kortelainen, M J; Lampén, T; Lassila-Perini, K; Lehti, S; Lindén, T; Luukka, P; Mäenpää, T; Tuominen, E; Tuominiemi, J; Tuovinen, E; Ungaro, D; Wendland, L; Banzuzi, K; Korpela, A; Tuuva, T; Sillou, D; Besancon, M; Dejardin, M; Denegri, D; Fabbro, B; Faure, J L; Ferri, F; Ganjour, S; Gentit, F X; Givernaud, A; 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Roinishvili, V; Anagnostou, G; Edelhoff, M; Feld, L; Heracleous, N; Hindrichs, O; Jussen, R; Klein, K; Merz, J; Mohr, N; Ostapchuk, A; Perieanu, A; Raupach, F; Sammet, J; Schael, S; Sprenger, D; Weber, H; Weber, M; Wittmer, B; Ata, M; Bender, W; Erdmann, M; Frangenheim, J; Hebbeker, T; Hinzmann, A; Hoepfner, K; Hof, C; Klimkovich, T; Klingebiel, D; Kreuzer, P; Lanske, D; Magass, C; Masetti, G; Merschmeyer, M; Meyer, A; Papacz, P; Pieta, H; Reithler, H; Schmitz, S A; Sonnenschein, L; Steggemann, J; Teyssier, D; Bontenackels, M; Davids, M; Duda, M; Flügge, G; Geenen, H; Giffels, M; Haj Ahmad, W; Heydhausen, D; Kress, T; Kuessel, Y; Linn, A; Nowack, A; Perchalla, L; Pooth, O; Rennefeld, J; Sauerland, P; Stahl, A; Thomas, M; Tornier, D; Zoeller, M H; Aldaya Martin, M; Behrenhoff, W; Behrens, U; Bergholz, M; Borras, K; Cakir, A; Campbell, A; Castro, E; Dammann, D; Eckerlin, G; Eckstein, D; Flossdorf, A; Flucke, G; Geiser, A; Glushkov, I; Hauk, J; Jung, H; Kasemann, M; Katkov, I; Katsas, P; Kleinwort, C; Kluge, H; Knutsson, A; Krücker, D; Kuznetsova, E; Lange, W; Lohmann, W; Mankel, R; Marienfeld, M; Melzer-Pellmann, I-A; Meyer, A B; Mnich, J; Mussgiller, A; Olzem, J; Parenti, A; Raspereza, A; Raval, A; Schmidt, R; Schoerner-Sadenius, T; Sen, N; Stein, M; Tomaszewska, J; Volyanskyy, D; Walsh, R; Wissing, C; Autermann, C; Bobrovskyi, S; Draeger, J; Enderle, H; Gebbert, U; Kaschube, K; Kaussen, G; Klanner, R; Mura, B; Naumann-Emme, S; Nowak, F; Pietsch, N; Sander, C; Schettler, H; Schleper, P; Schröder, M; Schum, T; Schwandt, J; Srivastava, A K; Stadie, H; Steinbrück, G; Thomsen, J; Wolf, R; Bauer, J; Buege, V; Chwalek, T; De Boer, W; Dierlamm, A; Dirkes, G; Feindt, M; Gruschke, J; Hackstein, C; Hartmann, F; Heindl, S M; Heinrich, M; Held, H; Hoffmann, K H; Honc, S; Kuhr, T; Martschei, D; Mueller, S; Müller, Th; Niegel, M; Oberst, O; Oehler, A; Ott, J; Peiffer, T; Piparo, D; Quast, G; Rabbertz, K; Ratnikov, F; Renz, M; Saout, C; Scheurer, A; Schieferdecker, P; Schilling, F-P; Schott, G; Simonis, H J; Stober, F M; Troendle, D; Wagner-Kuhr, J; Zeise, M; Zhukov, V; Ziebarth, E B; Daskalakis, G; Geralis, T; Kesisoglou, S; Kyriakis, A; Loukas, D; Manolakos, I; Markou, A; Markou, C; Mavrommatis, C; Petrakou, E; Gouskos, L; Mertzimekis, T J; Panagiotou, A; Evangelou, I; Foudas, C; Kokkas, P; Manthos, N; Papadopoulos, I; Patras, V; Triantis, F A; Aranyi, A; Bencze, G; Boldizsar, L; Debreczeni, G; Hajdu, C; Horvath, D; Kapusi, A; Krajczar, K; Laszlo, A; Sikler, F; Vesztergombi, G; Beni, N; Molnar, J; Palinkas, J; Szillasi, Z; Veszpremi, V; Raics, P; Trocsanyi, Z L; Ujvari, B; Bansal, S; Beri, S B; Bhatnagar, V; Dhingra, N; Jindal, M; Kaur, M; Kohli, J M; Mehta, M Z; Nishu, N; Saini, L K; Sharma, A; Singh, A P; Singh, J B; Singh, S P; Ahuja, S; Bhattacharya, S; Choudhary, B C; Gupta, P; Jain, S; Jain, S; Kumar, A; Shivpuri, R K; Choudhury, R K; Dutta, D; Kailas, S; Kataria, S K; Mohanty, A K; Pant, L M; Shukla, P; Suggisetti, P; Aziz, T; Guchait, M; Gurtu, A; Maity, M; 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2011-01-07

The results of the first search for long-lived gluinos produced in 7 TeV pp collisions at the CERN Large Hadron Collider are presented. The search looks for evidence of long-lived particles that stop in the CMS detector and decay in the quiescent periods between beam crossings. In a dataset with a peak instantaneous luminosity of 1×10(32) cm-2 s-1, an integrated luminosity of 10 pb-1, and a search interval corresponding to 62 hours of LHC operation, no significant excess above background was observed. Limits at the 95% confidence level on gluino pair production over 13 orders of magnitude of gluino lifetime are set. For a mass difference mg - mχ1(0) >100 GeV/c2, and assuming BR(g→gχ1(0))=100%, mg < 370 GeV/c2 are excluded for lifetimes from 10 μs to 1000 s.

Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Asonen, H.; Rakennus, K.; Tappura, K.; Hovinen, M.; Pessa, M.

1990-10-01

Gas-source molecular beam epitaxy (GSMBE), designating the method where the group III beams are derived from the evaporation of solid materials while the group V beams are derived from the high-temperature cracking of AsH 3 and PH 3, is a very promising method. We show in this work that using indium of high purity and optimizing the growth conditions, unintentional impurities in these films prepared by GSMBE can be reduced to a level comparable to that obtained by all-vapor-source chemical beam epitaxy (CBE). The films grown by GSMBE are of very high quality, as deduced from the measurements of electrical, optical, and structural properties. Furthermore, we have found that the alloy composition in InGaAsP for the wavelength λ of 1.1 μm changes significantly in a range of growth temperature from 525 to 530°C, likely due to an abrupt change in the sticking probability of phosphorus. We have also found that the phosphorus-to-gallium flux ratio strongly affects surface morphology of InGaAsP for λ = 1.3 μm.

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

PubMed Central

Liu, CY; Sun, ZZ; Yew, KC

2006-01-01

Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2) at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2), with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

Laser profile changes due to photon-axion induced beam splitting

NASA Astrophysics Data System (ADS)

Scarlett, Carol

2013-09-01

This paper looks at a potentially unique measurable due to photon-axion coupling in an external magnetic field. Traditionally, detection of such a coupling has focused on observation of an optical rotation of the beam's polarization due to either a birefringence or a path length difference (p.l.d.) between two polarization states. Such experiments, utilizing mirror cavities, have been significantly limited in sensitivity; approaching coupling strengths of ~ga=10-7 GeV-1. Here the bifurcation of a beam in a cavity is explored along with the possibility of measuring its influence on the photon density. Simulations indicate that coupling to levels ga~10-12 are, with an appropriate choice of cavity, within measurable limits. This is due to a rapid growth of a signal defined by the energy loss from the center accompanying an increase in the region beyond the beam waist. Finally, the influence of a non-zero axion mass is explored.