Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips.

PubMed

Feng, Shuang-Tao; Mei, Yun-Hui; Chen, Gang; Li, Xin; Lu, Guo-Quan

2016-07-12

Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bonding semiconductor power chips, such as the power insulated gated bipolar transistor (IGBT). However, for the traditional method of bonding IGBT chips, an external pressure of a few MPa is reported necessary for the sintering time of ~1 h. In order to shorten the processing duration time, we developed a rapid way to sinter nanosilver paste for bonding IGBT chips in less than 5 min using pulsed current. In this way, we firstly dried as-printed paste at about 100 °C to get rid of many volatile solvents because they may result in defects or voids during the out-gassing from the paste. Then, the pre-dried paste was further heated by pulse current ranging from 1.2 kA to 2.4 kA for several seconds. The whole procedure was less than 3 min and did not require any gas protection. We could obtain robust sintered joint with shear strength of 30-35 MPa for bonding 1200-V, 25-A IGBT and superior thermal properties. Static and dynamic electrical performance of the as-bonded IGBT assemblies was also characterized to verify the feasibility of this rapid sintering method. The results indicate that the electrical performance is comparable or even partially better than that of commercial IGBT modules. The microstructure evolution of the rapid sintered joints was also studied by scanning electron microscopy (SEM). This work may benefit the wide usage of nanosilver paste for rapid bonding IGBT chips in the future.

Methods of high current magnetic field generator for transcranial magnetic stimulation application

NASA Astrophysics Data System (ADS)

Bouda, N. R.; Pritchard, J.; Weber, R. J.; Mina, M.

2015-05-01

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/-20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG1) and MOSFET circuits (HCMFG2) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Methods of high current magnetic field generator for transcranial magnetic stimulation application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bouda, N. R., E-mail: nybouda@iastate.edu; Pritchard, J.; Weber, R. J.

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/−20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG{sub 1}) and MOSFET circuits (HCMFG{sub 2}) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Power and Thermal Technology for Air and Space-Scientific Research Program Delivery Order 0003: Electrical Technology Component Development

DTIC Science & Technology

2007-03-01

specific contact resistivity of Ti/AlNi/Au 24 21 The full view 3D model of the IGBT ………………………………….. 25 22 2D temperature distribution of the SiC...comprised of multiple materials. The representative geometry of a Si isolated gated bipolar transistor ( IGBT ) was chosen for the initial simulation...samples annealed at 650°C for 30 minutes in either the tube furnace with an oxygen gettering system or in the vacuum chamber, represented the superior

A fiber Bragg grating--bimetal temperature sensor for solar panel inverters.

PubMed

Ismail, Mohd Afiq; Tamchek, Nizam; Hassan, Muhammad Rosdi Abu; Dambul, Katrina D; Selvaraj, Jeyrai; Rahim, Nasrudin Abd; Sandoghchi, Reza; Adikan, Faisal Rafiq Mahamd

2011-01-01

This paper reports the design, characterization and implementation of a fiber Bragg grating (FBG)-based temperature sensor for an insulted-gate Bipolar transistor (IGBT) in a solar panel inverter. The FBG is bonded to the higher coefficient of thermal expansion (CTE) side of a bimetallic strip to increase its sensitivity. Characterization results show a linear relationship between increasing temperature and the wavelength shift. It is found that the sensitivity of the sensor can be categorized into three characterization temperature regions between 26 °C and 90 °C. The region from 41 °C to 90 °C shows the highest sensitivity, with a value of 14 pm/°C. A new empirical model that considers both temperature and strain effects has been developed for the sensor. Finally, the FBG-bimetal temperature sensor is placed in a solar panel inverter and results confirm that it can be used for real-time monitoring of the IGBT temperature.

Testing Single Phase IGBT H-Bridge Switch Plates for the High Voltage Converter Modulator at the Spallation Neutron Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peplov, Vladimir V; Anderson, David E; Solley, Dennis J

2014-01-01

Three IGBT H-bridge switching networks are used in each High Voltage Converter Modulator (HVCM) system at the Spallation Neutron Source (SNS) to generate drive currents to three boost transformer primaries switching between positive and negative bus voltages at 20 kHz. Every switch plate assembly is tested before installing it into an operational HVCM. A Single Phase Test Stand has been built for this purpose, and it is used for adjustment, measurement and testing of different configurations of switch plates. This paper will present a description of the Test Stand configuration and discuss the results of testing switch plates with twomore » different types of IGBT gate drivers currently in use on the HVCM systems. Comparison of timing characteristics of the original and new drivers and the resulting performance reinforces the necessity to replace the original H-bridge network drivers with the upgraded units.« less

Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak

Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted basedmore » on time-dependent temperature calculation.« less

Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

DOE PAGES

GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak; ...

2015-07-15

Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted basedmore » on time-dependent temperature calculation.« less

A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system.

PubMed

Jiang, J; Ma, G M; Luo, D P; Li, C R; Li, Q M; Wang, W

2014-02-01

Damped AC voltages detection system (DAC) is a productive way to detect the faults in power cables. To solve the problems of large volume, complicated structure and electromagnetic interference in existing switches, this paper developed a compact solid state switch based on electromagnetic trigger, which is suitable for DAC test system. Synchronous electromagnetic trigger of 32 Insulated Gate Bipolar Transistors (IGBTs) in series was realized by the topological structure of single line based on pulse width modulation control technology. In this way, external extension was easily achieved. Electromagnetic trigger and resistor-capacitor-diode snubber circuit were optimized to reduce the switch turn-on time and circular layout. Epoxy encapsulating was chosen to enhance the level of partial discharge initial voltage (PDIV). The combination of synchronous trigger and power supply is proposed to reduce the switch volume. Moreover, we have overcome the drawback of the electromagnetic interference and improved the detection sensitivity of DAC by using capacitor storage energy to maintain IGBT gate driving voltage. The experimental results demonstrated that the solid-state switch, with compact size, whose turn-on time was less than 400 ns and PDIV was more than 65 kV, was able to meet the actual demands of 35 kV DAC test system.

Silicon device performance measurements to support temperature range enhancement

NASA Technical Reports Server (NTRS)

Johnson, R. Wayne; Askew, Ray; Bromstead, James; Weir, Bennett

1991-01-01

The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.

A compact and continuously driven supersonic plasma and neutral source.

PubMed

Asai, T; Itagaki, H; Numasawa, H; Terashima, Y; Hirano, Y; Hirose, A

2010-10-01

A compact and repetitively driven plasma source has been developed by utilizing a magnetized coaxial plasma gun (MCPG) for diagnostics requiring deep penetration of a large amount of neutral flux. The system consists of a MCPG 95mm in length with a DN16 ConFlat connection port and an insulated gate bipolar transistor (IGBT) inverter power unit. The power supply consists of an array of eight IGBT units and is able to switch the discharge on and off at up to 10 kV and 600 A with a maximum repetitive frequency of 10 kHz. Multiple short duration discharge pulses maximize acceleration efficiency of the plasmoid. In the case of a 10 kHz operating frequency, helium-plasmoids in the velocity range of 20 km/s can be achieved.

On an efficient multilevel inverter assembly: structural savings and design optimisations

NASA Astrophysics Data System (ADS)

Choupan, Reza; Nazarpour, Daryoush; Golshannavaz, Sajjad

2018-01-01

This study puts forward an efficient unit cell to be taken in use in multilevel inverter assemblies. The proposed structure is in line with reductions in number of direct current (dc) voltage sources, insulated-gate bipolar transistors (IGBTs), gate driver circuits, installation area, and hence the implementation costs. Such structural savings do not sacrifice the technical performance of the proposed design wherein an increased number of output voltage levels is attained, interestingly. Targeting a techno-economic characteristic, the contemplated structure is included as the key unit of cascaded multilevel inverters. Such extensions require development of applicable design procedures. To this end, two efficient strategies are elaborated to determine the magnitudes of input dc voltage sources. As well, an optimisation process is developed to explore the optimal allocation of different parameters in overall performance of the proposed inverter. These parameters are investigated as the number of IGBTs, dc sources, diodes, and overall blocked voltage on switches. In the lights of these characteristics, a comprehensive analysis is established to compare the proposed design with the conventional and recently developed structures. Detailed simulation and experimental studies are conducted to assess the performance of the proposed design. The obtained results are discussed in depth.

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

PubMed

Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

2016-08-22

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature.

A 5 kA pulsed power supply for inductive and plasma loads in large volume plasma device.

PubMed

Srivastava, P K; Singh, S K; Sanyasi, A K; Awasthi, L M; Mattoo, S K

2016-07-01

This paper describes 5 kA, 12 ms pulsed power supply for inductive load of Electron Energy Filter (EEF) in large volume plasma device. The power supply is based upon the principle of rapid sourcing of energy from the capacitor bank (2.8 F/200 V) by using a static switch, comprising of ten Insulated Gate Bipolar Transistors (IGBTs). A suitable mechanism is developed to ensure equal sharing of current and uniform power distribution during the operation of these IGBTs. Safe commutation of power to the EEF is ensured by the proper optimization of its components and by the introduction of over voltage protection (>6 kV) using an indigenously designed snubber circuit. Various time sequences relevant to different actions of power supply, viz., pulse width control and repetition rate, are realized through optically isolated computer controlled interface.

A 5 kA pulsed power supply for inductive and plasma loads in large volume plasma device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, P. K., E-mail: pkumar@ipr.res.in; Singh, S. K.; Sanyasi, A. K.

This paper describes 5 kA, 12 ms pulsed power supply for inductive load of Electron Energy Filter (EEF) in large volume plasma device. The power supply is based upon the principle of rapid sourcing of energy from the capacitor bank (2.8 F/200 V) by using a static switch, comprising of ten Insulated Gate Bipolar Transistors (IGBTs). A suitable mechanism is developed to ensure equal sharing of current and uniform power distribution during the operation of these IGBTs. Safe commutation of power to the EEF is ensured by the proper optimization of its components and by the introduction of over voltagemore » protection (>6 kV) using an indigenously designed snubber circuit. Various time sequences relevant to different actions of power supply, viz., pulse width control and repetition rate, are realized through optically isolated computer controlled interface.« less

Ripple gate drive circuit for fast operation of series connected IGBTs

DOEpatents

Rockot, Joseph H.; Murray, Thomas W.; Bass, Kevin C.

2005-09-20

A ripple gate drive circuit includes a plurality of transistors having their power terminals connected in series across an electrical potential. A plurality of control circuits, each associated with one of the transistors, is provided. Each control circuit is responsive to a control signal and an optical signal received from at least one other control circuit for controlling the conduction of electrical current through the power terminals of the associated transistor. The control circuits are responsive to a first state of the control circuit for causing each transistor in series to turn on sequentially and responsive to a second state of the control signal for causing each transistor in series to turn off sequentially.

High Voltage EEE Parts for EMA/EHA Applications on Manned Launch Vehicles

NASA Technical Reports Server (NTRS)

Griffin, Trent; Young, David

2011-01-01

The objective of this paper is an assessment of high voltage electronic components required for high horsepower electric thrust vector control (TVC) systems for human spaceflight launch critical application. The scope consists of creating of a database of available Grade 1 electrical, electronic and electromechanical (EEE) parts suited to this application, a qualification path for potential non-Grade 1 EEE parts that could be used in these designs, and pathfinder testing to validate aspects of the proposed qualification plan. Advances in the state of the art in high power electric power systems enable high horsepower electric actuators, such as the electromechnical actuator (EMA) and the electro-hydrostatic actuator (EHA), to be used in launch vehicle TVC systems, dramaticly reducing weight, complexity and operating costs. Designs typically use high voltage insulated gate bipolar transistors (HV-IGBT). However, no Grade 1 HV-IGBT exists and it is unlikely that market factors alone will produce such high quality parts. Furthermore, the perception of risk, the lack of qualification methodoloy, the absence of manned space flight heritage and other barriers impede the adoption of commercial grade parts onto the critical path. The method of approach is to identify high voltage electronic component types and key parameters for parts currently used in high horsepower EMA/EHA applications, to search for higher quality substitutes and custom manufacturers, to create a database for these parts, and then to explore ways to qualify these parts for use in human spaceflight launch critical application, including grossly derating and possibly treating hybrid parts as modules. This effort is ongoing, but results thus far include identification of over 60 HV-IGBT from four manufacturers, including some with a high reliability process flow. Voltage ranges for HV-IGBT have been identified, as has screening tests used to characterize HV-IGBT. BSI BS ISO 21350 Space systems Off-the-shelf item utilization, developed from Marshall Work Instruction MWI8060.1 OFF-THE-SHELF HARDWARE UTILIZATION IN FLIGHT HARDWARE DEVELOPMENTwas found to provide guidance for including commercial off-the-shelf (COTS) hardware for use in critical applications.

Demagnetization monitoring and life extending control for permanent magnet-driven traction systems

NASA Astrophysics Data System (ADS)

Niu, Gang; Liu, Senyi

2018-03-01

This paper presents a novel scheme of demagnetization monitoring and life extending control for traction systems driven by permanent magnet synchronous motors (PMSMs). Firstly, the offline training is carried to evaluate fatigue damage of insulated gate bipolar transistors (IGBTs) under different flux loss based on first-principle modeling. Then an optimal control law can be extracted by turning down the power distribution factor of the demagnetizing PMSM until all damages of IGBTs turn to balance. Next, the similarity-based empirical modeling is employed to online estimate remaining flux of PMSMs, which is used to update the power distribution factor by referring the optimal control law for the health-oriented autonomous control. The proposed strategy can be demonstrated by a case study of traction drive system coupled with dual-PMSMs. Compared with traditional control strategy, the results show that the novel scheme can not only guarantee traction performance but also extend remaining useful life (RUL) of the system after suffering demagnetization fault.

MCTs and IGBTs - A comparison of performance in power electronic circuits

NASA Technical Reports Server (NTRS)

Sul, S. K.; Profumo, F.; Cho, G. H.; Lipo, T. A.

1989-01-01

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage

NASA Astrophysics Data System (ADS)

Namai, Masaki; An, Junjie; Yano, Hiroshi; Iwamuro, Noriyuki

2018-07-01

In this study, the experimental evaluation and numerical analysis of short-circuit mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus voltages from 400 to 800 V. Investigation of the impact of DC bus voltage on short-circuit capability yielded results that are extremely useful for many existing power electronics applications. Three failure mechanisms were identified in this study: thermal runaway, MOS channel current following device turn-off, and rupture of the gate oxide layer (gate oxide layer damage). The SiC MOSFETs experienced lattice temperatures exceeding 1000 K during the short-circuit transient; as Si insulated gate bipolar transistors (IGBTs) are not typically subject to such temperatures, the MOSFETs experienced distinct failure modes, and the mode experienced was significantly influenced by the DC bus voltage. In conclusion, suggestions regarding the SiC MOSFET design and operation methods that would enhance device robustness are proposed.

Reliability Design for Neutron Induced Single-Event Burnout of IGBT

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Ohnishi, Toyokazu; Fujikawa, Touma; Nose, Noboru; Hamada, Kimimori; Ishiko, Masayasu

Single-event burnout (SEB) caused by cosmic ray neutrons leads to catastrophic failures in insulated gate bipolar transistors (IGBTs). It was found experimentally that the incident neutron induced SEB failure rate increases as a function of the applied collector voltage. Moreover, the failure rate increased sharply with an increase in the applied collector voltage when the voltage exceeded a certain threshold value (SEB cutoff voltage). In this paper, transient device simulation results indicate that impact ionization at the n-drift/n+ buffer boundary is a crucially important factor in the turning-on of the parasitic pnp transistor, and eventually latch-up of the parasitic thyristor causes SEB. In addition, the device parameter dependency of the SEB cutoff voltage was analytically derived from the latch-up condition of the parasitic thyristor. As a result, it was confirmed that reducing the current gain of the parasitic transistor, such as by increasing the n-drift region thickness d was effective in increasing the SEB cutoff voltage. Furthermore, `white' neutron-irradiation experiments demonstrated that suppressing the inherent parasitic thyristor action leads to an improvement of the SEB cutoff voltage. It was confirmed that current gain optimization of the parasitic transistor is a crucial factor for establishing highly reliable design against chance failures.

Ultrafast Power Processor for Smart Grid Power Module Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

MAITRA, ARINDAM; LITWIN, RAY; lai, Jason

This project’s goal was to increase the switching speed and decrease the losses of the power semiconductor devices and power switch modules necessary to enable Smart Grid energy flow and control equipment such as the Ultra-Fast Power Processor. The primary focus of this project involves exploiting the new silicon-based Super-GTO (SGTO) technology and build on prototype modules already being developed. The prototype super gate-turn-off thyristor (SGTO) has been tested fully under continuously conducting and double-pulse hard-switching conditions for conduction and switching characteristics evaluation. The conduction voltage drop measurement results indicate that SGTO has excellent conduction characteristics despite inconsistency among somemore » prototype devices. Tests were conducted with two conditions: (1) fixed gate voltage and varying anode current condition, and (2) fixed anode current and varying gate voltage condition. The conduction voltage drop is relatively a constant under different gate voltage condition. In terms of voltage drop as a function of the load current, there is a fixed voltage drop about 0.5V under zero current condition, and then the voltage drop is linearly increased with the current. For a 5-kV voltage blocking device that may operate under 2.5-kV condition, the projected voltage drop is less than 2.5 V under 50-A condition, or 0.1%. If the device is adopted in a converter operating under soft-switching condition, then the converter can achieve an ultrahigh efficiency, typically above 99%. The two-pulse switching test results indicate that SGTO switching speed is very fast. The switching loss is relatively low as compared to that of the insulated-gate-bipolar-transistors (IGBTs). A special phenomenon needs to be noted is such a fast switching speed for the high-voltage switching tends to create an unexpected Cdv/dt current, which reduces the turn-on loss because the dv/dt is negative and increases the turn-off loss because the dv/dt is positive. As a result, the turn-on loss at low current is quite low, and the turn-off loss at low current is relatively high. The phenomenon was verified with junction capacitance measurement along with the dv/dt calculation. Under 2-kV test condition, the turn-on and turn-off losses at 25-A is about 3 and 9 mJ, respectively. As compared to a 4.5-kV, 60-A rated IGBT, which has turn-on and turn-off losses about 25 and 20 mJ under similar test condition, the SGTO shows significant switching loss reduction. The switching loss depends on the switching frequency, but under hard-switching condition, the SGTO is favored to the IGBT device. The only concern is during low current turn-on condition, there is a voltage bump that can translate to significant power loss and associated heat. The reason for such a current bump is not known from this study. It is necessary that the device manufacturer perform though test and provide the answer so the user can properly apply SGTO in pulse-width-modulated (PWM) converter and inverter applications.« less

Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reghu, T.; Mandloi, V.; Shrivastava, Purushottam

Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses ofmore » 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.« less

Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron

NASA Astrophysics Data System (ADS)

Reghu, T.; Mandloi, V.; Shrivastava, Purushottam

2014-05-01

Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses of 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.

Design and Comparison of Cascaded H-Bridge, Modular Multilevel Converter, and 5-L Active Neutral Point Clamped Topologies for Motor Drive Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marzoughi, Alinaghi; Burgos, Rolando; Boroyevich, Dushan

This paper presents the design procedure and comparison of converters currently used in medium-voltage high-power motor drive applications. For this purpose, the cascaded H-bridge (CHB), modular multilevel converter (MMC), and five-level active neutral point clamped (5-L ANPC) topologies are targeted. The design is performed using 1.7-kV insulated gate bipolar transistors (IGBTs) for CHB and MMC converters, and utilizing 3.3- and 4.5-kV IGBTs for 5-L ANPC topology as normally done in industry. The comparison is done between the designed converter topologies at three different voltage levels (4.16, 6.9, and 13.8 kV, with only the first two voltage levels in case ofmore » the 5-L ANPC) and two different power levels (3 and 5 MVA), in order to elucidate the dependence of different parameters on voltage and power rating. Finally, the comparison is done from several points of view such as efficiency, capacitive energy storage, semiconductor utilization, parts count (for measure of reliability), and power density.« less

Dynamic Fault Detection Chassis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mize, Jeffery J

2007-01-01

Abstract The high frequency switching megawatt-class High Voltage Converter Modulator (HVCM) developed by Los Alamos National Laboratory for the Oak Ridge National Laboratory's Spallation Neutron Source (SNS) is now in operation. One of the major problems with the modulator systems is shoot-thru conditions that can occur in a IGBTs H-bridge topology resulting in large fault currents and device failure in a few microseconds. The Dynamic Fault Detection Chassis (DFDC) is a fault monitoring system; it monitors transformer flux saturation using a window comparator and dV/dt events on the cathode voltage caused by any abnormality such as capacitor breakdown, transformer primarymore » turns shorts, or dielectric breakdown between the transformer primary and secondary. If faults are detected, the DFDC will inhibit the IGBT gate drives and shut the system down, significantly reducing the possibility of a shoot-thru condition or other equipment damaging events. In this paper, we will present system integration considerations, performance characteristics of the DFDC, and discuss its ability to significantly reduce costly down time for the entire facility.« less

Development of a repetitive compact torus injector

NASA Astrophysics Data System (ADS)

Onchi, Takumi; McColl, David; Dreval, Mykola; Rohollahi, Akbar; Xiao, Chijin; Hirose, Akira; Zushi, Hideki

2013-10-01

A system for Repetitive Compact Torus Injection (RCTI) has been developed at the University of Saskatchewan. CTI is a promising fuelling technology to directly fuel the core region of tokamak reactors. In addition to fuelling, CTI has also the potential for (a) optimization of density profile and thus bootstrap current and (b) momentum injection. For steady-state reactor operation, RCTI is necessary. The approach to RCTI is to charge a storage capacitor bank with a large capacitance and quickly charge the CT capacitor bank through a stack of integrated-gate bipolar transistors (IGBTs). When the CT bank is fully charged, the IGBT stack will be turned off to isolate banks, and CT formation/acceleration sequence will start. After formation of each CT, the fast bank will be replenished and a new CT will be formed and accelerated. Circuits for the formation and the acceleration in University of Saskatchewan CT Injector (USCTI) have been modified. Three CT shots at 10 Hz or eight shots at 1.7 Hz have been achieved. This work has been sponsored by the CRC and NSERC, Canada.

Thermal management and performance evaluation of a dual bi-directional, soft-switched IGBT-based inverter for the 1st autonomous microgrid power system in Taiwan under various operating conditions

NASA Astrophysics Data System (ADS)

Chang, Tien-Chan; Fuh, Yiin-Kuen; Lu, Hong-Yi; Tu, Sheng-Xun

2016-06-01

The thermal management of the inverter system is of great importance since very high voltage/current will be switched intermittently and/or continuously and high temperature is excruciably detrimental to the service life of electronics, especially for the switching devices such as insulated gate bipolar transistor (IGBT). In this study, a newly developed dual bi-directional IGBT-based inverter in conjunction with autonomous microgrid system is investigated with particular focus on the thermal management and performance evaluation under various operation conditions. Locally enhanced heat transfer approach such as oblique orientation and heat dissipating materials are experimentally investigated. The studied inverter system is initially packaged by a galvanized steel plate (size 62 × 48 × 18 cm) and the switching power is set in the range of 0.5-3 kW. The module is operated at the switching and pulse frequencies of 60 Hz and 20 kHz, respectively. The adoption of heat dissipating material in either paste or film form had experimentally shown to possess the flexibility tailoring heat transfer performance locally. Experimental studies of heat dissipating film with various hotspot scenarios showed that the temperature difference can be appreciably reduced as much as 13.1 and 15.4 °C, respectively with facilitation of one- and two-layers of heat dissipating film. From the measurement results, the measured peak temperature is highly dominated by the thickness of heat dissipating film, showing the dominance of thickness-dependent thermal resistance and resultant heat accumulation phenomena.

Modeling Single-Phase and Boiling Liquid Jet Impingement Cooling in Power Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narumanchi, S. V. J.; Hassani, V.; Bharathan, D.

2005-12-01

Jet impingement has been an attractive cooling option in a number of industries over the past few decades. Over the past 15 years, jet impingement has been explored as a cooling option in microelectronics. Recently, interest has been expressed by the automotive industry in exploring jet impingement for cooling power electronics components. This technical report explores, from a modeling perspective, both single-phase and boiling jet impingement cooling in power electronics, primarily from a heat transfer viewpoint. The discussion is from the viewpoint of the cooling of IGBTs (insulated-gate bipolar transistors), which are found in hybrid automobile inverters.

An innovative high-power constant-current pulsed-arc power-supply for a high-density pulsed-arc-plasma ion-source using a LaB6-filament.

PubMed

Ueno, A; Oguri, H; Ikegami, K; Namekawa, Y; Ohkoshi, K; Tokuchi, A

2010-02-01

An innovative high-power constant-current (CC) pulsed-arc (PA) power-supply (PS) indispensable for a high-density PA plasma ion-source using a lanthanum hexaboride (LaB(6)) filament was devised by combining a constant-voltage (CV) PA-PS, which is composed of an insulated gate bipolar transistor (IGBT) switch, a CV direct-current (dc) PS and a 270 mF capacitor with a CC-PA-PS, which is composed of an IGBT-switch, a CC-dc-PS and a 400 microH inductor, through the inductor. The hybrid-CC-PA-PS succeeded in producing a flat arc-pulse with a peak power of 56 kW (400 A x 140 V) and a duty factor of more than 1.5% (600 micros x 25 Hz) for Japan Proton Accelerator Research Complex (J-PARC) H(-) ion-source stably. It also succeeded in shortening the 99% rising-time of the arc-pulse-current to about 20 micros and tilting up or down the arc-pulse-current arbitrarily and almost linearly by changing the setting voltage of its CV-dc-PS.

An improved fault-tolerant control scheme for PWM inverter-fed induction motor-based EVs.

PubMed

Tabbache, Bekheïra; Benbouzid, Mohamed; Kheloui, Abdelaziz; Bourgeot, Jean-Matthieu; Mamoune, Abdeslam

2013-11-01

This paper proposes an improved fault-tolerant control scheme for PWM inverter-fed induction motor-based electric vehicles. The proposed strategy deals with power switch (IGBTs) failures mitigation within a reconfigurable induction motor control. To increase the vehicle powertrain reliability regarding IGBT open-circuit failures, 4-wire and 4-leg PWM inverter topologies are investigated and their performances discussed in a vehicle context. The proposed fault-tolerant topologies require only minimum hardware modifications to the conventional off-the-shelf six-switch three-phase drive, mitigating the IGBTs failures by specific inverter control. Indeed, the two topologies exploit the induction motor neutral accessibility for fault-tolerant purposes. The 4-wire topology uses then classical hysteresis controllers to account for the IGBT failures. The 4-leg topology, meanwhile, uses a specific 3D space vector PWM to handle vehicle requirements in terms of size (DC bus capacitors) and cost (IGBTs number). Experiments on an induction motor drive and simulations on an electric vehicle are carried-out using a European urban driving cycle to show that the proposed fault-tolerant control approach is effective and provides a simple configuration with high performance in terms of speed and torque responses. Copyright © 2013 ISA. Published by Elsevier Ltd. All rights reserved.

Thin SOI lateral IGBT with band-to-band tunneling mechanism

NASA Astrophysics Data System (ADS)

Fu, Qiang; Tang, Zhaohuan; Tan, Kaizhou; Wang, Zhikuan; Mei, Yong

2017-06-01

In this paper, a novel 200V lateral IGBT on thin SOI layer with a band-to-band tunneling junction near the anode is proposed. The structure and the operating mechanism of the proposed IGBT are described and discussed. Its main feature is that the novel IGBT structure has a unique abrupt doped p++/n++ tunneling junction in the side of the anode. By utilizing the reverse bias characteristics of the tunneling junction, the proposed IGBT can achieve excellent reverse conducting performance. Numerical simulations suggest that a low reverse conduction voltage drop VR=-1.6V at a current density of 100A/cm2 and a soft factor S=0.63 of the build-in diode are achieved.

Electric Field Distribution in High Voltage Power Modules Using Finite Element Simulations

NASA Astrophysics Data System (ADS)

Wang, Zhao; Liu, Yaoning

2018-03-01

With the development of the high voltage insulated gate bipolar transistor (IGBT) power module, it leads to serious problems concerning the electric field insulation. The electric field capabilities of the silicone gels used in the power module encapsulation directly affect the module insulation. Some solutions have been developed to optimize the electric field and reliability. In this letter, the finite element simulation was used to analyze and localize the maximum electric field position; solutions were proposed to improve the module insulation. It’s demonstrated that BaTiO3 silicone composite is a promising insulation material for high voltage power device.

Reliability of IGBT in a STATCOM for Harmonic Compensation and Power Factor Correction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopi Reddy, Lakshmi Reddy; Tolbert, Leon M; Ozpineci, Burak

With smart grid integration, there is a need to characterize reliability of a power system by including reliability of power semiconductors in grid related applications. In this paper, the reliability of IGBTs in a STATCOM application is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP, and analytical equations for average conduction losses in an IGBT and a diode are derived and compared with experimental data. A commonly used reliability model is used to predict reliability of IGBT.

Verification of an IGBT Fusing Switch for Over-current Protection of the SNS HVCM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benwell, Andrew; Kemp, Mark; Burkhart, Craig

2010-06-11

An IGBT based over-current protection system has been developed to detect faults and limit the damage caused by faults in high voltage converter modulators. During normal operation, an IGBT enables energy to be transferred from storage capacitors to a H-bridge. When a fault occurs, the over-current protection system detects the fault, limits the fault current and opens the IGBT to isolate the remaining stored energy from the fault. This paper presents an experimental verification of the over-current protection system under applicable conditions.

A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement

NASA Astrophysics Data System (ADS)

Wensuo, Chen; Bo, Zhang; Jian, Fang; Zhaoji, Li

2011-07-01

A new lateral insulated-gate bipolar transistor with a controlled anode (CA-LIGBT) on silicon-on-insulator (SOI) substrate is reported. Benefiting from both the enhanced conductivity modulation effect and the high resistance controlled electron extracting path, CA-LIGBT has a faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT, which we presented earlier. As the simulation results show, the ratios of figure of merit (FOM) for CA-LIGBT compared to that of 3-D NCA-LIGBT and conventional LIGBT are 1.45: 1 and 59.53: 1, respectively. And, the new devices can be created by using additional silicon direct bonding (SDB). So, from the power efficiency point of view, the proposed CA-LIGBT is a promising device for use in power ICs.

Design, Simulation, and Preliminary Testing of a 20 Ampere Energy Management System

DTIC Science & Technology

2015-06-01

Vre f 0.5 V 0.58 V Vil 0.8 V 1.1 V Vih 1.9 V 2.25 V An important feature of this power module is the smart shutdown feature [15]. A simpli- fied...protection is removed when the pin voltage reaches the high-logic level Vih [15]. Values for Rshunt , RSD, and CSD had to be selected to implement this over...0.58 V Vil 0.8 V Vih 2.25 V Table 3.3. Truth table for H-bridge IGBTs, from [16]. Logic Input Output Shutdown Pin Lower IGBT Upper IGBT Lower IGBT

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

High Voltage, Solid-State Switch for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Prager, James; Miller, Kenneth E.; Slobodov, Ilia

2017-10-01

Eagle Harbor Technologies, Inc. is developing a series stack of solid-state switches to produce a single high voltage switch that can be operated at over 35 kV. During the Phase I program, EHT developed two high voltage switch modules: one with isolated power gate drive and a second with inductively coupled gate drive. These switches were tested at 15 kV and up to 300 A at switching frequencies up to 500 kHz for 10 ms bursts. Robust switching was demonstrated for both IGBTs and SiC MOSFETs. During the Phase II program, EHT will develop a higher voltage switch (>35 kV) that will be suitable for high pulsed and average power applications. EHT will work with LTX to utilize these switches to design, build, and test a pulsed magnetron driver that will be delivered to LTX before the completion of the program. EHT will present data from the Phase I program as well as preliminary results from the start of the Phase II program. With support of DOE SBIR.

Hot-carrier-induced current capability degradation and optimization for lateral IGBT on thick SOI substrate

NASA Astrophysics Data System (ADS)

Zhang, Chunwei; Li, Yang; Yue, Wenjing; Fu, Xiaoqian; Li, Zhiming

2018-07-01

In this paper, the hot-carrier-induced current capability degradation of a 600 V lateral insulated gate bipolar transistor (LIGBT) on thick silicon on insulator (SOI) substrate is investigated. Our experiments found that, for the SOI-LIGBT, the worst stress condition is the maximum gate voltage (Vgmax) condition and the current degradation is dominated by the damages in the channel region under the Vgmax stress condition. However, further analyses show that the influence of channel region damages on the collector current degradation increases with the increase of measured collector voltage and is maximum in the current saturation region. Therefore, in our opinion, the hot-carrier-induced current capability degradation of the SOI-LIGBT should be evaluated by the degradation of saturation current under the Vgmax stress condition. In addition, a novel SOI-LIGBT structure with an external p-type region was also proposed, which can alleviate the damage in the channel region by reducing the lateral electric field peak. Our experimental results demonstrate that the proposed structure could optimize the hot-carrier reliability effectively with the other characteristics maintained. He is currently a lecturer at the University of Jinan, Jinan, China. His research interests include power electronics, high voltage devices and the electronics reliability.

Income generated by women treated with magnetic resonance imaging-based brachytherapy: A simulation study evaluating the macroeconomic benefits of implementing a high-end technology in a public sector healthcare setting.

PubMed

Chakraborty, Santam; Mahantshetty, Umesh; Chopra, Supriya; Lewis, Shirley; Hande, Vinod; Gudi, Shivakumar; Krishnatry, Rahul; Engineer, Reena; Shrivastava, Shyam Kishore

To estimate the difference in income generated if all women presenting in our institute over a 5-year period were treated with MRI-based image-guided brachytherapy (MR-IGBT) instead of conventional radiograph-based brachytherapy (CR-BT). Outcome data from 463 patients (94 treated with MR-IGBT) treated in our institute was used to simulate cumulative women-days of work and cumulative income over 5 years for 5526 patients expected to be treated in this period. The average daily income for a woman was derived from the National Sample Survey Organization (NSSO) survey data. Outcomes from both unmatched and propensity score-matched data sets were simulated. The cumulative income in 5 years ranged between Rs 101-168 million if all patients presenting at our institute underwent MR-IGBT. The simulated excess income ranged from Rs 4-45 million after 5 years, which represented 6-66% of the expenditure incurred for acquiring the required equipment and manpower for practicing exclusive MR-IGBT. Using outcome data from a prospective cohort of patients treated with MR-IGBT in our institute, we demonstrated that significant economic gains may be realized if MR-IGBT was used instead of CR-BT. Copyright © 2017 American Brachytherapy Society. Published by Elsevier Inc. All rights reserved.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Quantifying Appropriate De-rating of SiC MOSFETs Subject to Cosmic Rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatty, Kiran

Terrestrial Cosmic Radiation (TCR) is known to cause failures in high-voltage Si devices resulting in de-rating of the maximum reverse blocking voltage. In this work, a test setup was developed and unaccelerated TCR testing was performed on 1200V Si IGBTs, 1200V SiC MOSFETs and 1200V SiC Schottky diodes. Failures due to TCR were generated on 1200V Si IGBTs at reverse voltages from 900V to 1175V. Si IGBTs investigated in this work will need to be operated at a maximum voltage of 800V to achieve a Failure in Time (FIT) rate of 100. No failures were observed on 1200V SiC MOSFETsmore » and Schottky diodes after testing at 1200V for over 1.5 years demonstrating low FIT rates compared to Si IGBTs. 1200V SiC Schottky diodes were fabricated in this program and the packaged devices were used in the TCR testing.« less

A pulsed load model and its impact on a synchronous-rectifier system

NASA Astrophysics Data System (ADS)

Hou, Pengfei; Xu, Ye; Li, Jianke; Wang, Jinquan; Zhang, Haitao; Yan, Jun; Wang, Chunming; Chen, Jingjing

2017-02-01

The pulsed load has become a developing trend of power loading. Unlike traditional loads, pulsed loads with current abrupt and repeated charges will result in unstable Microgrid operations because of their small capacity and inertia. In this paper, an Average Magnitude Sum Function (AMSF) is proposed to calculate the frequency of the grid, and based on AMSF, the Relative Deviation Rate (RDR) that characterises the impact of pulsed load on the AC side of the grid is defined and its calculation process is described in detail. In addition, the system dynamic characteristics under a pulsed load are analysed using an Insulated Gate Bipolar Transistor (IGBT) to control the on/off state of the resistive load for simulating a pulsed load. Finally, the transient characteristics of a synchronous-rectifier system with a pulsed load are studied and validated experimentally.

Repetitive transcranial magnetic stimulator with controllable pulse parameters

NASA Astrophysics Data System (ADS)

Peterchev, Angel V.; Murphy, David L.; Lisanby, Sarah H.

2011-06-01

The characteristics of transcranial magnetic stimulation (TMS) pulses influence the physiological effect of TMS. However, available TMS devices allow very limited adjustment of the pulse parameters. We describe a novel TMS device that uses a circuit topology incorporating two energy storage capacitors and two insulated-gate bipolar transistor (IGBT) modules to generate near-rectangular electric field pulses with adjustable number, polarity, duration, and amplitude of the pulse phases. This controllable pulse parameter TMS (cTMS) device can induce electric field pulses with phase widths of 10-310 µs and positive/negative phase amplitude ratio of 1-56. Compared to conventional monophasic and biphasic TMS, cTMS reduces energy dissipation up to 82% and 57% and decreases coil heating up to 33% and 41%, respectively. We demonstrate repetitive TMS trains of 3000 pulses at frequencies up to 50 Hz with electric field pulse amplitude and width variability less than the measurement resolution (1.7% and 1%, respectively). Offering flexible pulse parameter adjustment and reduced power consumption and coil heating, cTMS enhances existing TMS paradigms, enables novel research applications and could lead to clinical applications with potentially enhanced potency.

PWM-switching pattern-based diagnosis scheme for single and multiple open-switch damages in VSI-fed induction motor drives.

PubMed

Trabelsi, Mohamed; Boussak, Mohamed; Gossa, Moncef

2012-03-01

This paper deals with a fault detection technique for insulated-gate bipolar transistors (IGBTs) open-circuit faults in voltage source inverter (VSI)-fed induction motor drives. The novelty of this idea consists in analyzing the pulse-width modulation (PWM) switching signals and the line-to-line voltage levels during the switching times, under both healthy and faulty operating conditions. The proposed method requires line-to-line voltage measurement, which provides information about switching states and is not affected by the load. The fault diagnosis scheme is achieved using simple hardware and can be included in the existing inverter system without any difficulty. In addition, it allows not only accurate single and multiple faults diagnosis but also minimization of the fault detection time to a maximum of one switching period (T(c)). Simulated and experimental results on a 3-kW squirrel-cage induction motor drive are displayed to validate the feasibility and the effectiveness of the proposed strategy. Crown Copyright © 2011. Published by Elsevier Ltd. All rights reserved.

Repetitive transcranial magnetic stimulator with controllable pulse parameters.

PubMed

Peterchev, Angel V; Murphy, David L; Lisanby, Sarah H

2011-06-01

The characteristics of transcranial magnetic stimulation (TMS) pulses influence the physiological effect of TMS. However, available TMS devices allow very limited adjustment of the pulse parameters. We describe a novel TMS device that uses a circuit topology incorporating two energy storage capacitors and two insulated-gate bipolar transistor (IGBT) modules to generate near-rectangular electric field pulses with adjustable number, polarity, duration, and amplitude of the pulse phases. This controllable pulse parameter TMS (cTMS) device can induce electric field pulses with phase widths of 10-310 µs and positive/negative phase amplitude ratio of 1-56. Compared to conventional monophasic and biphasic TMS, cTMS reduces energy dissipation up to 82% and 57% and decreases coil heating up to 33% and 41%, respectively. We demonstrate repetitive TMS trains of 3000 pulses at frequencies up to 50 Hz with electric field pulse amplitude and width variability less than the measurement resolution (1.7% and 1%, respectively). Offering flexible pulse parameter adjustment and reduced power consumption and coil heating, cTMS enhances existing TMS paradigms, enables novel research applications and could lead to clinical applications with potentially enhanced potency.

Pulse-burst laser systems for fast Thomson scattering (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Den Hartog, D. J.; Center for Magnetic Self-Organization in Laboratory and Astrophysical Plasmas, University of Wisconsin-Madison, Madison, Wisconsin 53706; Ambuel, J. R.

2010-10-15

Two standard commercial flashlamp-pumped Nd:YAG (YAG denotes yttrium aluminum garnet) lasers have been upgraded to ''pulse-burst'' capability. Each laser produces a burst of up to 15 2 J Q-switched pulses (1064 nm) at repetition rates of 1-12.5 kHz. Variable pulse-width drive (0.15-0.39 ms) of the flashlamps is accomplished by insulated gate bipolar transistor (IGBT) switching of electrolytic capacitor banks. Direct control of the laser Pockels cell drive enables optimal pulse energy extraction, and up to four 2 J laser pulses during one flashlamp pulse. These lasers are used in the Thomson scattering plasma diagnostic system on the MST reversed-field pinchmore » to record the dynamic evolution of the electron temperature profile and temperature fluctuations. To further these investigations, a custom pulse-burst laser system with a maximum pulse repetition rate of 250 kHz is now being commissioned.« less

A Novel Transcranial Magnetic Stimulator Inducing Near Rectangular Pulses with Controllable Pulse Width (cTMS)

PubMed Central

Jalinous, Reza; Lisanby, Sarah H.

2013-01-01

A novel transcranial magnetic stimulation (TMS) device with controllable pulse width (PW) and near rectangular pulse shape (cTMS) is described. The cTMS device uses an insulated gate bipolar transistor (IGBT) with appropriate snubbers to switch coil currents up to 7 kA, enabling PW control from 5 μs to over 100 μs. The near-rectangular induced electric field pulses use 22–34% less energy and generate 67–72% less coil heating compared to matched conventional cosine pulses. CTMS is used to stimulate rhesus monkey motor cortex in vivo with PWs of 20 to 100 μs, demonstrating the expected decrease of threshold pulse amplitude with increasing PW. The technological solutions used in the cTMS prototype can expand functionality, and reduce power consumption and coil heating in TMS, enhancing its research and therapeutic applications. PMID:18232369

Repetitive Transcranial Magnetic Stimulator with Controllable Pulse Parameters

PubMed Central

Peterchev, Angel V; Murphy, David L; Lisanby, Sarah H

2013-01-01

The characteristics of transcranial magnetic stimulation (TMS) pulses influence the physiological effect of TMS. However, available TMS devices allow very limited adjustment of the pulse parameters. We describe a novel TMS device that uses a circuit topology incorporating two energy storage capacitors and two insulated-gate bipolar transistor (IGBT) modules to generate near-rectangular electric field pulses with adjustable number, polarity, duration, and amplitude of the pulse phases. This controllable pulse parameter TMS (cTMS) device can induce electric field pulses with phase widths of 10–310 μs and positive/negative phase amplitude ratio of 1–56. Compared to conventional monophasic and biphasic TMS, cTMS reduces energy dissipation by up to 82% and 57%, and decreases coil heating by up to 33% and 41%, respectively. We demonstrate repetitive TMS trains of 3,000 pulses at frequencies up to 50 Hz with electric field pulse amplitude and width variability less than the measurement resolution (1.7% and 1%, respectively). Offering flexible pulse parameter adjustment and reduced power consumption and coil heating, cTMS enhances existing TMS paradigms, enables novel research applications, and could lead to clinical applications with potentially enhanced potency. PMID:21540487

Power Quality Control and Design of Power Converter for Variable-Speed Wind Energy Conversion System with Permanent-Magnet Synchronous Generator

PubMed Central

Oğuz, Yüksel; Güney, İrfan; Çalık, Hüseyin

2013-01-01

The control strategy and design of an AC/DC/AC IGBT-PMW power converter for PMSG-based variable-speed wind energy conversion systems (VSWECS) operation in grid/load-connected mode are presented. VSWECS consists of a PMSG connected to a AC-DC IGBT-based PWM rectifier and a DC/AC IGBT-based PWM inverter with LCL filter. In VSWECS, AC/DC/AC power converter is employed to convert the variable frequency variable speed generator output to the fixed frequency fixed voltage grid. The DC/AC power conversion has been managed out using adaptive neurofuzzy controlled inverter located at the output of controlled AC/DC IGBT-based PWM rectifier. In this study, the dynamic performance and power quality of the proposed power converter connected to the grid/load by output LCL filter is focused on. Dynamic modeling and control of the VSWECS with the proposed power converter is performed by using MATLAB/Simulink. Simulation results show that the output voltage, power, and frequency of VSWECS reach to desirable operation values in a very short time. In addition, when PMSG based VSWECS works continuously with the 4.5 kHz switching frequency, the THD rate of voltage in the load terminal is 0.00672%. PMID:24453905

Power quality control and design of power converter for variable-speed wind energy conversion system with permanent-magnet synchronous generator.

PubMed

Oğuz, Yüksel; Güney, İrfan; Çalık, Hüseyin

2013-01-01

The control strategy and design of an AC/DC/AC IGBT-PMW power converter for PMSG-based variable-speed wind energy conversion systems (VSWECS) operation in grid/load-connected mode are presented. VSWECS consists of a PMSG connected to a AC-DC IGBT-based PWM rectifier and a DC/AC IGBT-based PWM inverter with LCL filter. In VSWECS, AC/DC/AC power converter is employed to convert the variable frequency variable speed generator output to the fixed frequency fixed voltage grid. The DC/AC power conversion has been managed out using adaptive neurofuzzy controlled inverter located at the output of controlled AC/DC IGBT-based PWM rectifier. In this study, the dynamic performance and power quality of the proposed power converter connected to the grid/load by output LCL filter is focused on. Dynamic modeling and control of the VSWECS with the proposed power converter is performed by using MATLAB/Simulink. Simulation results show that the output voltage, power, and frequency of VSWECS reach to desirable operation values in a very short time. In addition, when PMSG based VSWECS works continuously with the 4.5 kHz switching frequency, the THD rate of voltage in the load terminal is 0.00672%.

Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

NASA Astrophysics Data System (ADS)

Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for high-voltage X-ray DC-DC power converter with a voltage multiplier strategy has some specified voltage pattern tracking voltage response performances under rapid rising time and no overshoot in start transient tube voltage as well as the minimized steady-state voltage ripple in tube voltage.

Multilevel DC Link Inverter for Brushless Permanent Magnet Motors with Very Low Inductance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, G.J.

2001-10-29

Due to their long effective air gaps, permanent magnet motors tend to have low inductance. The use of ironless stator structure in present high power PM motors (several tens of kWs) reduces the inductance even further (< 100 {micro}H). This low inductance imposes stringent current regulation demands for the inverter to obtain acceptable current ripple. An analysis of the current ripple for these low inductance brushless PM motors shows that a standard inverter with the most commonly used IGBT switching devices cannot meet the current regulation demands and will produce unacceptable current ripples due to the IGBT's limited switching frequency.more » This paper introduces a new multilevel dc link inverter, which can dramatically reduce the current ripple for brushless PM motor drives. The operating principle and design guidelines are included.« less

Modelisation et simulation d'une liaison HVDC de type VSC-MMC

NASA Astrophysics Data System (ADS)

Saad, Hani Aziz

High-voltage direct current transmission systems (HVDC) are rapidly expanding in the world. Two main factors are responsible for this expansion. The first is related to the difficulty of building new overhead lines to ensure the development of high-voltage AC grids, which makes the usage of underground cables more common. However, the use of such cables is limited in length to a few tens of km because of the capacitive current generated by the cable itself. Beyond this length limit, the solution is usually to transmit in DC. The second factor is related to the development of offshore wind power plants that require connecting powers of several hundred of MW to the mainland grid by cables whose lengths can reach several hundreds of km and consequently require HVDC transmission system. Several HVDC projects are currently planned and developed by the French transmission system operator RTE. One of such projects is the INELFE interconnection project, with a capacity of 2,000 MW, between France and Spain. This thesis has been funded by RTE, in order to model and simulate in off-line and real time modes, modern HVDC interconnections. The delivered simulation means are used to examine targeted HVDC system performances and risks of abnormal interactions with surrounding power systems. The particularity of the INELFE HVDC system is the usage of a dedicated control system that will largely determine the dynamic behaviour of the system for both large disturbances (faults on the network) and small perturbations (power step changes). Various VSC topologies, including the conventional two-level, multi-level diode-clamped and floating capacitor multi-level converters, have been proposed and reported in the literature. However, due to the complexity of controls and practical limitations, the VSC-HVDC system installations have been limited to the two-level and three-level diode-clamped converters. Recently, the development of modular technology called MMC (Modular Multilevel Converter [Siemens] - [Alstom]) or CTL (Cascaded Two Level topology [ABB]) has allowed to overcome existing limitations. This topology consists of several sub-modules connected in series. Each sub-module contains two IGBTs with antiparallel diodes and a capacitor that act as energy storage. The control of these IGBTs allows connecting and disconnecting the capacitor on the network. The grouping of several sub-modules in series forms an arm. From the AC side, each phase consists of two arms. Reactors are included in series with each arm in order to limit the fault current. The large number of IGBTs in MMCs creates complicated computation problems in electromagnetic transient type (EMT-type) simulation tools. Detailed MMC models include the representation of thousands of IGBT (Insulated Gate Bipolar Transistor) switches and must use small numerical integration time steps to accurately represent fast and multiple simultaneous switching events. This becomes particularly more complex for performing real-time simulations. The computational burden introduced by such models highlights the need to develop more efficient models. A current trend is based on simplified models capable of delivering sufficient accuracy for EMT-type simulations, however the validity range of such models must be carefully evaluated. The first objective of this thesis is to model HVDC-MMC transmission systems in EMT-type programs for off-line and real-time simulations. To fulfill this objective, different modelling approaches are presented, then the control system used for HVDC-MMC links is developed and finally the implementations of MMC models using both CPU (Central Processing Unit) and FPGA (Field-Programmable Gate Array) technologies for real-time simulations, are presented. The contributions are useful for researchers and engineers using transient simulation tools for modelling and analysis of power systems including HVDC-MMC. The HVDC links currently planned or constructed in France, are embedded in highly meshed networks and may have significant impact on their operations and performance. Therefore, the second objective of this thesis is to perform modal analysis and parametric studies to assess the risks of abnormal interactions between several HVDC links inserted in meshed AC networks.

Experimental Discussion on a 6-kW, 2-kWh Battery Energy Storage System Using a Bidirectional Isolated DC/DC Converter

NASA Astrophysics Data System (ADS)

Abe, Takahiro; Tan, Nadia Mei Lin; Akagi, Hirofumi

This paper presents an experimental discussion on a 6-kW, full-bridge, zero-voltage switching bidirectional isolated dc/dc converter for a 53.2-V, 2-kWh Li-ion battery energy storage system. The combination of high-frequency switching devices, 600-V/200-A IGBTs and 100-V/500-A MOSFETs with a high-frequency transformer reduces the weight and physical size of the bidirectional isolated dc/dc converter. The dc voltage on the high-voltage side of the converter is controlled in a range of 300V to 355V as the battery voltage on the low-voltage side varies from 50V to 59V. Experimental verification of bidirectional power flow into (battery charging) or out of (battery discharging) the Li-ion battery bank is also presented. The maximal efficiency of the dc/dc converter is measured to be 98.1% during charging and 98.2% during discharging, excluding the gate drive loss and control circuit loss.

Heat removal from bipolar transistor by loop heat pipe with nickel and copper porous structures.

PubMed

Nemec, Patrik; Smitka, Martin; Malcho, Milan

2014-01-01

Loop heat pipes (LHPs) are used in many branches of industry, mainly for cooling of electrical elements and systems. The loop heat pipe is a vapour-liquid phase-change device that transfers heat from evaporator to condenser. One of the most important parts of the LHP is the porous wick structure. The wick structure provides capillary force to circulate the working fluid. To achieve good thermal performance of LHP, capillary wicks with high permeability and porosity and fine pore radius are expected. The aim of this work was to develop porous structures from copper and nickel powder with different grain sizes. For experiment copper powder with grain size of 50 and 100 μm and nickel powder with grain size of 10 and 25 μm were used. Analysis of these porous structures and LHP design are described in the paper. And the measurements' influences of porous structures in LHP on heat removal from the insulated gate bipolar transistor (IGBT) have been made.

Heat Removal from Bipolar Transistor by Loop Heat Pipe with Nickel and Copper Porous Structures

PubMed Central

Smitka, Martin; Malcho, Milan

2014-01-01

Loop heat pipes (LHPs) are used in many branches of industry, mainly for cooling of electrical elements and systems. The loop heat pipe is a vapour-liquid phase-change device that transfers heat from evaporator to condenser. One of the most important parts of the LHP is the porous wick structure. The wick structure provides capillary force to circulate the working fluid. To achieve good thermal performance of LHP, capillary wicks with high permeability and porosity and fine pore radius are expected. The aim of this work was to develop porous structures from copper and nickel powder with different grain sizes. For experiment copper powder with grain size of 50 and 100 μm and nickel powder with grain size of 10 and 25 μm were used. Analysis of these porous structures and LHP design are described in the paper. And the measurements' influences of porous structures in LHP on heat removal from the insulated gate bipolar transistor (IGBT) have been made. PMID:24959622

Evaluation of Fairchild's Gate Drive Optocoupler, Type FOD3150, Under Wide Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Adhad; Panko, Scott

2010-01-01

An optocoupler is a semiconductor device that is used to transfer a signal between different parts of a circuit that need to be electrically isolated from one another - for example, where a high voltage is to be switched with a low voltage control signal. Optocouplers often can be used in place of relays. These optocouplers utilize an infrared LED (light emitting diode) and a photodetector such as a silicon controlled rectifier or photosensitive silicon diode for the transfer of the electronic signal between components of a circuit by means of a short optical transmission channel. For maximum coupling, the wave-length responses of the LED and the detector should be very similar. In switch-mode power supply applications, optocouplers offer advantages over transformers by virtue of simpler circuit design, reduced weight, and DC coupling capability. The effects of extreme temperature exposure and thermal cycling on the performance of a commercial-off-the-shelf (COTS) optocoupler, Fairchild FOD3150, were evaluated in this work. This 1.0 A output current, high noise immunity gate drive optocoupler utilizes an aluminum gallium arsenide (AlGaAs) LED, is capable of driving most 800V/20A IGBT/MOSFETs, and is suited for fast switching in motor control inverter applications and high performance power systems. Some of the specifications of the isolator chip are listed. The device was evaluated in terms of output response, output rise (t(sub r)) and fall times (t(sub f)), and propagation delays (using a 50% level between input and output during low to high (t(sub PLH)) and high to low (t(sub PLH)) transitions). The output supply current was also obtained. These parameters were recorded at various test temperatures between -190 C and +110 C.

Analysis on IGBT and Diode Failures in Distribution Electronic Power Transformers

NASA Astrophysics Data System (ADS)

Wang, Si-cong; Sang, Zi-xia; Yan, Jiong; Du, Zhi; Huang, Jia-qi; Chen, Zhu

2018-02-01

Fault characteristics of power electronic components are of great importance for a power electronic device, and are of extraordinary importance for those applied in power system. The topology structures and control method of Distribution Electronic Power Transformer (D-EPT) are introduced, and an exploration on fault types and fault characteristics for the IGBT and diode failures is presented. The analysis and simulation of different fault types for the fault characteristics lead to the D-EPT fault location scheme.

Fixation of operating point and measurement of turn on characteristics of IGBT F4-75R06W1E3

NASA Astrophysics Data System (ADS)

Haseena, A.; Subhash Joshi T., G.; George, Saly

2018-05-01

For the proficient operation of the Power electronic circuit, signal level performance of power electronic devices are very important. For getting good signal level characteristics, fixing operating point is very critical. Device deviates from the typical characteristics given in the datasheet due to the presence of stray components in the circuit lay out. Fixation of operating point of typical silicon IGBT and its turn on characteristics is discussed in this paper.

Processing and characterization of device solder interconnection and module attachment for power electronics modules

NASA Astrophysics Data System (ADS)

Haque, Shatil

This research is focused on the processing of an innovative three-dimensional packaging architecture for power electronics building blocks with soldered device interconnections and subsequent characterization of the module's critical interfaces. A low-cost approach termed metal posts interconnected parallel plate structure (MPIPPS) was developed for packaging high-performance modules of power electronics building blocks (PEBB). The new concept implemented direct bonding of copper posts, not wire bonding of fine aluminum wires, to interconnect power devices as well as joining the different circuit planes together. We have demonstrated the feasibility of this packaging approach by constructing PEBB modules (consisting of Insulated Gate Bipolar Transistors (IGBTs), diodes, and a few gate driver elements and passive components). In the 1st phase of module fabrication with IGBTs with Si3N 4 passivation, we had successfully fabricated packaged devices and modules using the MPIPPS technique. These modules were tested electrically and thermally, and they operated at pulse-switch and high power stages up to 6kW. However, in the 2nd phase of module fabrication with polyimide passivated devices, we experienced significant yield problems due to metallization difficulties of these devices. The under-bump metallurgy scheme for the development of a solderable interface involved sputtering of Ti-Ni-Cu and Cr-Cu, and an electroless deposition of Zn-Ni-Au metallization. The metallization process produced excellent yield in the case of Si3N4 passivated devices. However, under the same metallization schemes, devices with a polyimide passivation exhibited inconsistent electrical contact resistance. We found that organic contaminants such as hydrocarbons remain in the form of thin monolayers on the surface, even in the case of as-received devices from the manufacturer. Moreover, in the case of polyimide passivated devices, plasma cleaning introduced a few carbon constituents on the surface, which was not observed in the case of Si3N4 passivated devices. X-Ray Photoelectron Spectroscopy (XPS) Spectra showed evidence of possible carbon contaminants, such as carbide (˜282.9eV) and graphite (˜284.3eV) on the surface at binding energies below the binding energy of the hydrocarbon peak (C 1s at 285eV). Whereas above the hydrocarbon peak energy level, carbon-nitrogen compounds, single bond carbon compounds (˜285.9eV) and double bond carbon compounds (˜288.5eV) were evident. The majority of the carbon composition on the pad surface was associated with hydrocarbons, which were hydrophobic in nature, thus making the device contact pad less wettable. (Abstract shortened by UMI.)

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

Equivalence of Gyn GEC-ESTRO guidelines for image guided cervical brachytherapy with EUD-based dose prescription

PubMed Central

2013-01-01

Background To establish a generalized equivalent uniform dose (gEUD) -based prescription method for Image Guided Brachytherapy (IGBT) that reproduces the Gyn GEC-ESTRO WG (GGE) prescription for cervix carcinoma patients on CT images with limited soft tissue resolution. Methods The equivalence of two IGBT planning approaches was investigated in 20 patients who received external beam radiotherapy (EBT) and 5 concomitant high dose rate IGBT treatments. The GGE planning strategy based on dose to the most exposed 2 cm3 (D2cc) was used to derive criteria for the gEUD-based planning of the bladder and rectum. The safety of gEUD constraints in terms of GGE criteria was tested by maximizing dose to the gEUD constraints for individual fractions. Results The gEUD constraints of 3.55 Gy for the rectum and 5.19 Gy for the bladder were derived. Rectum and bladder gEUD-maximized plans resulted in D2cc averages very similar to the initial GGE criteria. Average D2ccs and EUDs from the full treatment course were comparable for the two techniques within both sets of normal tissue constraints. The same was found for the tumor doses. Conclusions The derived gEUD criteria for normal organs result in GGE-equivalent IGBT treatment plans. The gEUD-based planning considers the entire dose distribution of organs in contrast to a single dose-volume-histogram point. PMID:24225184

flexTMS--a novel repetitive transcranial magnetic stimulation device with freely programmable stimulus currents.

PubMed

Gattinger, Norbert; Moessnang, Georg; Gleich, Bernhard

2012-07-01

Transcranial magnetic stimulation (TMS) is able to noninvasively excite neuronal populations due to brief magnetic field pulses. The efficiency and the characteristics of stimulation pulse shapes influence the physiological effect of TMS. However, commercial devices allow only a minimum of control of different pulse shapes. Basically, just sinusoidal and monophasic pulse shapes with fixed pulse widths are available. Only few research groups work on TMS devices with controllable pulse parameters such as pulse shape or pulse width. We describe a novel TMS device with a full-bridge circuit topology incorporating four insulated-gate bipolar transistor (IGBT) modules and one energy storage capacitor to generate arbitrary waveforms. This flexible TMS (flexTMS ) device can generate magnetic pulses which can be adjusted with respect to pulse width, polarity, and intensity. Furthermore, the equipment allows us to set paired pulses with a variable interstimulus interval (ISI) from 0 to 20 ms with a step size of 10  μs. All user-defined pulses can be applied continually with repetition rates up to 30 pulses per second (pps) or, respectively, up to 100 pps in theta burst mode. Offering this variety of flexibility, flexTMS will allow the enhancement of existing TMS paradigms and novel research applications.

Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

2014-10-01

Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

A 120kV IGBT modulator for driving a pierce electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Earley, L. M.; Brown, R. W.; Carlson, R. L.

2004-01-01

An IGBT modulator has been developed to drive a 120 kV, 23 A Pierce electron gun. The modulator is capable of producing pulses up to 10 {mu}s in width at repetition rates up to 10Hz with no active reset. The pulse rise time on the electron gun will be approximately 2 {mu}s and the remaining 8 {mu}s of flattop is tuned to have a ripple of less than 1 percent rms. The modulator technology was developed from a previous 50 kV prototype. The modulator consists of six boards, each with one EUPEC IGBT that drives a single common step-up transformermore » wound on METGLAS 2605SC cores. The six transformer cores share a common bi-filar output secondary winding. The modulator uses a fiber optic trigger system and has a high voltage cable output with an epoxy receptacle on the oil end and a ceramic receptacle on the vacuum end. The 120 kV electron gun was manufactured by MDS Co. and will be used to generate sheet electron beams from the standard pencil beam produced by the Pierce electron gun.« less

Implementation of image-guided brachytherapy (IGBT) for patients with uterine cervix cancer: a tumor volume kinetics approach.

PubMed

Carvalho, Heloisa de Andrade; Mendez, Lucas Castro; Stuart, Silvia Radwanski; Guimarães, Roger Guilherme Rodrigues; Ramos, Clarissa Cerchi Angotti; de Paula, Lucas Assad; de Sales, Camila Pessoa; Chen, André Tsin Chih; Blasbalg, Roberto; Baroni, Ronaldo Hueb

2016-08-01

To evaluate tumor shrinking kinetics in order to implement image-guided brachytherapy (IGBT) for the treatment of patients with cervix cancer. This study has prospectively evaluated tumor shrinking kinetics of thirteen patients with uterine cervix cancer treated with combined chemoradiation. Four high dose rate brachytherapy fractions were delivered during the course of pelvic external beam radiation therapy (EBRT). Magnetic resonance imaging (MRI) exams were acquired at diagnosis (D), first (B1), and third (B3) brachytherapy fractions. Target volumes (GTV and HR-CTV) were calculated by both the ellipsoid formula (VE) and MRI contouring (VC), which were defined by a consensus between at least two radiation oncologists and a pelvic expert radiologist. Most enrolled patients had squamous cell carcinoma and FIGO stage IIB disease, and initiated brachytherapy after the third week of pelvic external beam radiation. Gross tumor volume volume reduction from diagnostic MRI to B1 represented 61.9% and 75.2% of the initial volume, when measured by VE and VC, respectively. Only a modest volume reduction (15-20%) was observed from B1 to B3. The most expressive tumor shrinking occurred in the first three weeks of oncological treatment and was in accordance with gynecological examination. These findings may help in IGBT implementation.

High Speed and High Functional Inverter Power Supplies for Plasma Generation and Control, and their Performance

NASA Astrophysics Data System (ADS)

Uesugi, Yoshihiko; Razzak, Mohammad A.; Kondo, Kenji; Kikuchi, Yusuke; Takamura, Shuichi; Imai, Takahiro; Toyoda, Mitsuhiro

The Rapid development of high power and high speed semiconductor switching devices has led to their various applications in related plasma fields. Especially, a high speed inverter power supply can be used as an RF power source instead of conventional linear amplifiers and a power supply to control the magnetic field in a fusion plasma device. In this paper, RF thermal plasma production and plasma heating experiments are described emphasis placed on using a static induction transistor inverter at a frequency range between 200 kHz and 2.5 MHz as an RF power supply. Efficient thermal plasma production is achieved experimentally by using a flexible and easily operated high power semiconductor inverter power supply. Insulated gate bipolar transistor (IGBT) inverter power supplies driven by a high speed digital signal processor are applied as tokamak joule coil and vertical coil power supplies to control plasma current waveform and plasma equilibrium. Output characteristics, such as the arbitrary bipolar waveform generation of a pulse width modulation (PWM) inverter using digital signal processor (DSP) can be successfully applied to tokamak power supplies for flexible plasma current operation and fast position control of a small tokamak.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Implementation of image-guided brachytherapy (IGBT) for patients with uterine cervix cancer: a tumor volume kinetics approach

PubMed Central

Mendez, Lucas Castro; Stuart, Silvia Radwanski; Guimarães, Roger Guilherme Rodrigues; Ramos, Clarissa Cerchi Angotti; de Paula, Lucas Assad; de Sales, Camila Pessoa; Chen, André Tsin Chih; Blasbalg, Roberto; Baroni, Ronaldo Hueb

2016-01-01

Purpose To evaluate tumor shrinking kinetics in order to implement image-guided brachytherapy (IGBT) for the treatment of patients with cervix cancer. Material and methods This study has prospectively evaluated tumor shrinking kinetics of thirteen patients with uterine cervix cancer treated with combined chemoradiation. Four high dose rate brachytherapy fractions were delivered during the course of pelvic external beam radiation therapy (EBRT). Magnetic resonance imaging (MRI) exams were acquired at diagnosis (D), first (B1), and third (B3) brachytherapy fractions. Target volumes (GTV and HR-CTV) were calculated by both the ellipsoid formula (VE) and MRI contouring (VC), which were defined by a consensus between at least two radiation oncologists and a pelvic expert radiologist. Results Most enrolled patients had squamous cell carcinoma and FIGO stage IIB disease, and initiated brachytherapy after the third week of pelvic external beam radiation. Gross tumor volume volume reduction from diagnostic MRI to B1 represented 61.9% and 75.2% of the initial volume, when measured by VE and VC, respectively. Only a modest volume reduction (15-20%) was observed from B1 to B3. Conclusions The most expressive tumor shrinking occurred in the first three weeks of oncological treatment and was in accordance with gynecological examination. These findings may help in IGBT implementation. PMID:27648083

The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

NASA Astrophysics Data System (ADS)

Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

2015-11-01

Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

Model and Study on Cascade Control System Based on IGBT Chopping Control

NASA Astrophysics Data System (ADS)

Niu, Yuxin; Chen, Liangqiao; Wang, Shuwen

2018-01-01

Thyristor cascade control system has a wide range of applications in the industrial field, but the traditional cascade control system has some shortcomings, such as a low power factor, serious harmonic pollution. In this paper, not only analyzing its system structure and working principle, but also discussing the two main factors affecting the power factor. Chopping-control cascade control system, adopted a new power switching device IGBT, which could overcome traditional cascade control system’s two main drawbacks efficiently. The basic principle of this cascade control system is discussed in this paper and the model of speed control system is built by using MATLAB/Simulink software. Finally, the simulation results of the system shows that the system works efficiently. This system is worthy to be spread widely in engineering application.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simpson, Daniel R., E-mail: drsimpson@ucsd.edu; Scanderbeg, Daniel J.; Carmona, Ruben

Purpose/Objectives: A report of clinical outcomes of a computed tomography (CT)-based image guided brachytherapy (IGBT) technique for treatment of cervical cancer. Methods and Materials: Seventy-six women with International Federation of Gynecology and Obstetrics stage IB to IVA cervical carcinoma diagnosed between 2007 and 2014 were treated with definitive external beam radiation therapy (EBRT) with or without concurrent chemotherapy followed by high-dose-rate (HDR) IGBT. All patients underwent planning CT simulation at each implantation. A high-risk clinical target volume (HRCTV) encompassing any visible tumor and the entire cervix was contoured on the simulation CT. When available, magnetic resonance imaging (MRI) was performedmore » at implantation to assist with tumor delineation. The prescription dose was prescribed to the HRCTV. Results: The median follow-up time was 17 months. Thirteen patients (17%) had an MRI done before brachytherapy, and 16 patients (21%) were treated without MRI guidance. The mean EBRT/IGBT sum 2-Gy equivalent dose (EQD2) delivered to the 90% volume of the HRCTV was 86.3 Gy. The mean maximum EQD2s delivered to 2 cm{sup 3} of the rectum, sigmoid, and bladder were 67.5 Gy, 66.2 Gy, and 75.3 Gy, respectively. The 2-year cumulative incidences of local, locoregional, and distant failure were 5.8% (95% confidence interval [CI]: 1.4%-14.8%), 15.1% (95% CI: 5.4%-29.4%), and 24.3% (95% CI: 12.1%-38.9%), respectively. The 2-year overall and disease-free survival rates were 75% (95% CI, 61%-91%) and 73% (95% CI, 60%-90%), respectively. Twenty-nine patients (38%) experienced grade ≥2 acute toxicity, with 5 cases of acute grade 3 toxicity and no grade ≥4 toxicities. One patient experienced grade 3 gastrointestinal toxicity. No other late grade ≥3 events were observed. Conclusions: This is the largest report to date of CT/MRI-based IGBT for the treatment of cervical cancer. The results are promising, with excellent local control and acceptable toxicity. Further investigation is needed to assess the long-term safety and efficacy of this treatment.« less

2.3-MW Medium-Voltage, Three-Level Wind Energy Inverter Applying a Unique Bus Structure and 4.5-kV Si/SiC Hybrid Isolated Power Modules: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erdman, W.; Keller, J.; Grider, D.

A high-efficiency, 2.3-MW, medium-voltage, three-level inverter utilizing 4.5-kV Si/SiC (silicon carbide) hybrid modules for wind energy applications is discussed. The inverter addresses recent trends in siting the inverter within the base of multimegawatt turbine towers. A simplified split, three-layer laminated bus structure that maintains low parasitic inductances is introduced along with a low-voltage, high-current test method for determining these inductances. Feed-thru bushings, edge fill methods, and other design features of the laminated bus structure provide voltage isolation that is consistent with the 10.4-kV module isolation levels. Inverter efficiency improvement is a result of the (essential) elimination of the reverse recoverymore » charge present in 4.5-kV Si PIN diodes, which can produce a significant reduction in diode turn-off losses as well as insulated-gate bipolar transistor (IGBT) turn-on losses. The hybrid modules are supplied in industry-standard 140 mm x 130 mm and 190 mm x 130 mm packages to demonstrate direct module substitution into existing inverter designs. A focus on laminated bus/capacitor-bank/module subassembly level switching performance is presented.« less

Design and characterization of a novel power over fiber system integrating a high power diode laser

NASA Astrophysics Data System (ADS)

Perales, Mico; Yang, Mei-huan; Wu, Cheng-liang; Hsu, Chin-wei; Chao, Wei-sheng; Chen, Kun-hsein; Zahuranec, Terry

2017-02-01

High power 9xx nm diode lasers along with MH GoPower's (MHGP's) flexible line of Photovoltaic Power Converters (PPCs) are spurring high power applications for power over fiber (PoF), including applications for powering remote sensors and sensors monitoring high voltage equipment, powering high voltage IGBT gate drivers, converters used in RF over Fiber (RFoF) systems, and system power applications, including powering UAVs. In PoF, laser power is transmitted over fiber, and is converted to electricity by photovoltaic cells (packaged into Photovoltaic Power Converters, or PPCs) which efficiently convert the laser light. In this research, we design a high power multi-channel PoF system, incorporating a high power 976 nm diode laser, a cabling system with fiber break detection, and a multichannel PPC-module. We then characterizes system features such as its response time to system commands, the PPC module's electrical output stability, the PPC-module's thermal response, the fiber break detection system response, and the diode laser optical output stability. The high power PoF system and this research will serve as a scalable model for those interested in researching, developing, or deploying a high power, voltage isolated, and optically driven power source for high reliability utility, communications, defense, and scientific applications.

Power module packaging with double sided planar interconnection and heat exchangers

DOEpatents

Liang, Zhenxian; Marlino, Laura D.; Ning, Puqi; Wang, Fei

2015-05-26

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Partners | Energy Systems Integration Facility | NREL

Science.gov Websites

Renewable Electricity to Grid Integration Evaluation of New Technology IGBT Industry Asetek High Performance Energy Commission High Performance Computing & Visualization Real-Time Data Collection for Institute/Schneider Electric Renewable Electricity to Grid Integration End-to-End Communication and Control

MO-FG-210-00: US Guided Systems for Brachytherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

Ultrasound (US) is one of the most widely used imaging modalities in medical practice. Since US imaging offers real-time imaging capability, it has becomes an excellent option to provide image guidance for brachytherapy (IGBT). (1) The physics and the fundamental principles of US imaging are presented, and the typical steps required to commission an US system for IGBT is provided for illustration. (2) Application of US for prostate HDR brachytherapy, including partial prostate treatments using MR-ultrasound co-registration to enable a focused treatment on the disease within the prostate is also presented. Prostate HDR with US image guidance planning can benefitmore » from real time visualization of the needles, and fusion of the ultrasound images with T2 weighted MR allows the focusing of the treatment to the specific areas of disease within the prostate, so that the entire gland need not be treated. Finally, (3) ultrasound guidance for an eye plaque program is presented. US can be a key component of placement and QA for episcleral plaque brachytherapy for ocular cancer, and the UCLA eye plaque program with US for image guidance is presented to demonstrate the utility of US verification of plaque placement in improving the methods and QA in episcleral plaque brachytherapy. Learning Objectives: To understand the physics of an US system and the necessary aspects of commissioning US for image guided brachytherapy (IGBT). To understand real time planning of prostate HDR using ultrasound, and its application in partial prostate treatments using MR-ultrasound fusion to focus treatment on disease within the prostate. To understand the methods and QA in applying US for localizing the target and the implant during a episcleral plaque brachytherapy procedures.« less

MO-FG-210-01: Commissioning An US System for Brachytherapy: An Overview of Physics, Instrumentation, and Techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Z.

Ultrasound (US) is one of the most widely used imaging modalities in medical practice. Since US imaging offers real-time imaging capability, it has becomes an excellent option to provide image guidance for brachytherapy (IGBT). (1) The physics and the fundamental principles of US imaging are presented, and the typical steps required to commission an US system for IGBT is provided for illustration. (2) Application of US for prostate HDR brachytherapy, including partial prostate treatments using MR-ultrasound co-registration to enable a focused treatment on the disease within the prostate is also presented. Prostate HDR with US image guidance planning can benefitmore » from real time visualization of the needles, and fusion of the ultrasound images with T2 weighted MR allows the focusing of the treatment to the specific areas of disease within the prostate, so that the entire gland need not be treated. Finally, (3) ultrasound guidance for an eye plaque program is presented. US can be a key component of placement and QA for episcleral plaque brachytherapy for ocular cancer, and the UCLA eye plaque program with US for image guidance is presented to demonstrate the utility of US verification of plaque placement in improving the methods and QA in episcleral plaque brachytherapy. Learning Objectives: To understand the physics of an US system and the necessary aspects of commissioning US for image guided brachytherapy (IGBT). To understand real time planning of prostate HDR using ultrasound, and its application in partial prostate treatments using MR-ultrasound fusion to focus treatment on disease within the prostate. To understand the methods and QA in applying US for localizing the target and the implant during a episcleral plaque brachytherapy procedures.« less

MO-FG-210-02: Implementation of Image-Guided Prostate HDR Brachytherapy Using MR-Ultrasound Fusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Libby, B.

Ultrasound (US) is one of the most widely used imaging modalities in medical practice. Since US imaging offers real-time imaging capability, it has becomes an excellent option to provide image guidance for brachytherapy (IGBT). (1) The physics and the fundamental principles of US imaging are presented, and the typical steps required to commission an US system for IGBT is provided for illustration. (2) Application of US for prostate HDR brachytherapy, including partial prostate treatments using MR-ultrasound co-registration to enable a focused treatment on the disease within the prostate is also presented. Prostate HDR with US image guidance planning can benefitmore » from real time visualization of the needles, and fusion of the ultrasound images with T2 weighted MR allows the focusing of the treatment to the specific areas of disease within the prostate, so that the entire gland need not be treated. Finally, (3) ultrasound guidance for an eye plaque program is presented. US can be a key component of placement and QA for episcleral plaque brachytherapy for ocular cancer, and the UCLA eye plaque program with US for image guidance is presented to demonstrate the utility of US verification of plaque placement in improving the methods and QA in episcleral plaque brachytherapy. Learning Objectives: To understand the physics of an US system and the necessary aspects of commissioning US for image guided brachytherapy (IGBT). To understand real time planning of prostate HDR using ultrasound, and its application in partial prostate treatments using MR-ultrasound fusion to focus treatment on disease within the prostate. To understand the methods and QA in applying US for localizing the target and the implant during a episcleral plaque brachytherapy procedures.« less

MO-FG-210-03: Intraoperative Ultrasonography-Guided Positioning of Plaque Brachytherapy in the Treatment of Choroidal Melanoma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamb, J.

2015-06-15

Ultrasound (US) is one of the most widely used imaging modalities in medical practice. Since US imaging offers real-time imaging capability, it has becomes an excellent option to provide image guidance for brachytherapy (IGBT). (1) The physics and the fundamental principles of US imaging are presented, and the typical steps required to commission an US system for IGBT is provided for illustration. (2) Application of US for prostate HDR brachytherapy, including partial prostate treatments using MR-ultrasound co-registration to enable a focused treatment on the disease within the prostate is also presented. Prostate HDR with US image guidance planning can benefitmore » from real time visualization of the needles, and fusion of the ultrasound images with T2 weighted MR allows the focusing of the treatment to the specific areas of disease within the prostate, so that the entire gland need not be treated. Finally, (3) ultrasound guidance for an eye plaque program is presented. US can be a key component of placement and QA for episcleral plaque brachytherapy for ocular cancer, and the UCLA eye plaque program with US for image guidance is presented to demonstrate the utility of US verification of plaque placement in improving the methods and QA in episcleral plaque brachytherapy. Learning Objectives: To understand the physics of an US system and the necessary aspects of commissioning US for image guided brachytherapy (IGBT). To understand real time planning of prostate HDR using ultrasound, and its application in partial prostate treatments using MR-ultrasound fusion to focus treatment on disease within the prostate. To understand the methods and QA in applying US for localizing the target and the implant during a episcleral plaque brachytherapy procedures.« less

Single-phase frequency converter

NASA Astrophysics Data System (ADS)

Baciu, I.; Cunţan, C. D.

2017-01-01

The paper presents a continuous voltage inverter - AC (12V / 230V) made with IGBT and two-stage voltage transformer. The sequence control transistors is achieved using a ring counter whose clock signal is obtained with a monostable circuit LM 555. The frequency of the clock signal can be adjustment with a potentiometer that modifies the charging current of the capacitor which causes constant monostable circuit time. Command sequence consists of 8 intervals of which 6 are assigned to command four transistors and two for the period break at the beginning and end of the sequence control. To obtain an alternation consisting of two different voltage level, two transistors will be comanded, connected to different windings of the transformer and the one connected to the winding providing lower voltage must be comanded twice. The output of the numerator goes through an inverter type MOS and a current amplifier with bipolar transistor.To achieve galvanic separation, an optocoupler will be used for each IGBT transistor, while protection is achieved with resistance and diode circuit. At the end there is connected an LC filter for smoothing voltage variations.

Novel control system of the high-voltage IGBT-switch

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Mamontov, Y. I.; Gusev, A. I.; Pedos, M. S.

2017-05-01

HV solid-state switch control circuit was developed and tested. The switch was made with series connection IGBT-transistors. The distinctive feature of the circuit is an ability to fine-tune the switching time of every transistor. Simultaneous switching provides balancing of the dynamic voltage at all switch elements. A separate control board switches on and off every transistor. On and off signals from the main conductor are sent to the board by current pulses of different polarity. A positive pulse provides the transistor switch-on, while a negative pulse provides their switch-off. The time interval between pulses defines the time when the switch is turned on. The minimum time when the switch is turned on equals to a few microseconds, while the maximum time is not limited. This paper shows the test results of 4 kV switch prototype. The switch was used to produce rectangular pulses of a microsecond range under resistive load. The possibility to generate the damped harmonic oscillations was also tested. On the basis of this approach, positive testing results open up a possibility to design switches under an operating voltage of tens kilovolts.

SU-E-T-254: Development of a HDR-BT QA Tool for Verification of Source Position with Oncentra Applicator Modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumazaki, Y; Miyaura, K; Hirai, R

2015-06-15

Purpose: To develop a High Dose Rate Brachytherapy (HDR-BT) quality assurance (QA) tool for verification of source position with Oncentra applicator modeling, and to report the results of radiation source positions with this tool. Methods: We developed a HDR-BT QA phantom and automated analysis software for verification of source position with Oncentra applicator modeling for the Fletcher applicator used in the MicroSelectron HDR system. This tool is intended for end-to-end tests that mimic the clinical 3D image-guided brachytherapy (3D-IGBT) workflow. The phantom is a 30x30x3 cm cuboid phantom with radiopaque markers, which are inserted into the phantom to evaluate applicatormore » tips and reference source positions; positions are laterally shifted 10 mm from the applicator axis. The markers are lead-based and scatter radiation to expose the films. Gafchromic RTQA2 films are placed on the applicators. The phantom includes spaces to embed the applicators. The source position is determined as the distance between the exposed source position and center position of two pairs of the first radiopaque markers. We generated a 3D-IGBT plan with applicator modeling. The first source position was 6 mm from the applicator tips, and the second source position was 10 mm from the first source position. Results: All source positions were consistent with the exposed positions within 1 mm for all Fletcher applicators using in-house software. Moreover, the distance between source positions was in good agreement with the reference distance. Applicator offset, determined as the distance from the applicator tips at the first source position in the treatment planning system, was accurate. Conclusion: Source position accuracy of applicator modeling used in 3D-IGBT was acceptable. This phantom and software will be useful as a HDR-BT QA tool for verification of source position with Oncentra applicator modeling.« less

Advanced Propulsion Power Distribution System for Next Generation Electric/Hybrid Vehicle. Phase 1; Preliminary System Studies

NASA Technical Reports Server (NTRS)

Bose, Bimal K.; Kim, Min-Huei

1995-01-01

The report essentially summarizes the work performed in order to satisfy the above project objective. In the beginning, different energy storage devices, such as battery, flywheel and ultra capacitor are reviewed and compared, establishing the superiority of the battery. Then, the possible power sources, such as IC engine, diesel engine, gas turbine and fuel cell are reviewed and compared, and the superiority of IC engine has been established. Different types of machines for drive motor/engine generator, such as induction machine, PM synchronous machine and switched reluctance machine are compared, and the induction machine is established as the superior candidate. Similar discussion was made for power converters and devices. The Insulated Gate Bipolar Transistor (IGBT) appears to be the most superior device although Mercury Cadmium Telluride (MCT) shows future promise. Different types of candidate distribution systems with the possible combinations of power and energy sources have been discussed and the most viable system consisting of battery, IC engine and induction machine has been identified. Then, HFAC system has been compared with the DC system establishing the superiority of the former. The detailed component sizing calculations of HFAC and DC systems reinforce the superiority of the former. A preliminary control strategy has been developed for the candidate HFAC system. Finally, modeling and simulation study have been made to validate the system performance. The study in the report demonstrates the superiority of HFAC distribution system for next generation electric/hybrid vehicle.

High-rep-rate Thomson scattering for LHD

NASA Astrophysics Data System (ADS)

den Hartog, D. J.; Borchardt, M. T.; Holly, D. J.; Schmitz, O.; Yasuhara, R.; Yamada, I.; Funaba, H.; Osakabe, M.; Morisaki, T.

2017-10-01

A high-rep-rate pulse-burst laser system is being built for the LHD Thomson scattering (TS) diagnostic. This laser will have two operating scenarios, a fast-burst sequence of 15 kHz rep rate for at least 15 ms, and a slow-burst sequence of 1 kHz for at least 50 ms. There will be substantial flexibility in burst sequences for tailoring to experimental requirements. This new laser system will operate alongside the existing lasers in the LHD TS diagnostic, and will use the same beamline. This increase in temporal resolution capability complements the high spatial resolution (144 points) of the LHD TS diagnostic, providing unique measurement capability unmatched on any other fusion experiment. The new pulse-burst laser is a straightforward application of technology developed at UW-Madison, consisting of a Nd:YAG laser head with modular flashlamp drive units and a customized control system. Variable pulse-width drive of the flashlamps is accomplished by IGBT (insulated gate bipolar transistor) switching of electrolytic capacitor banks. Direct control of the laser Pockels cell drive enables optimal pulse energy extraction, producing >1.5 J q-switched pulses with 20 ns FWHM. Burst operation of this laser system will be used to capture fast time evolution of the electron temperature and density profiles during events such as ELMs, RMP perturbations, and various MHD modes. This work is supported by the U. S. Department of Energy and the National Institute for Fusion Science (Japan).

Energy-saving management modelling and optimization for lead-acid battery formation process

NASA Astrophysics Data System (ADS)

Wang, T.; Chen, Z.; Xu, J. Y.; Wang, F. Y.; Liu, H. M.

2017-11-01

In this context, a typical lead-acid battery producing process is introduced. Based on the formation process, an efficiency management method is proposed. An optimization model with the objective to minimize the formation electricity cost in a single period is established. This optimization model considers several related constraints, together with two influencing factors including the transformation efficiency of IGBT charge-and-discharge machine and the time-of-use price. An example simulation is shown using PSO algorithm to solve this mathematic model, and the proposed optimization strategy is proved to be effective and learnable for energy-saving and efficiency optimization in battery producing industries.

Three phase power conversion system for utility interconnected PV applications

NASA Astrophysics Data System (ADS)

Porter, David G.

1999-03-01

Omnion Power Engineering Corporation has developed a new three phase inverter that improves the cost, reliability, and performance of three phase utility interconnected photovoltaic inverters. The inverter uses a new, high manufacturing volume IGBT bridge that has better thermal performance than previous designs. A custom easily manufactured enclosure was designed. Controls were simplified to increase reliability while maintaining important user features.

Lifetime Prediction of IGBT in a STATCOM Using Modified-Graphical Rainflow Counting Algorithm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopi Reddy, Lakshmi Reddy; Tolbert, Leon M; Ozpineci, Burak

Rainflow algorithms are one of the best counting methods used in fatigue and failure analysis [17]. There have been many approaches to the rainflow algorithm, some proposing modifications. Graphical Rainflow Method (GRM) was proposed recently with a claim of faster execution times [10]. However, the steps of the graphical method of rainflow algorithm, when implemented, do not generate the same output as the four-point or ASTM standard algorithm. A modified graphical method is presented and discussed in this paper to overcome the shortcomings of graphical rainflow algorithm. A fast rainflow algorithm based on four-point algorithm but considering point comparison thanmore » range comparison is also presented. A comparison between the performances of the common rainflow algorithms [6-10], including the proposed methods, in terms of execution time, memory used, and efficiency, complexity, and load sequences is presented. Finally, the rainflow algorithm is applied to temperature data of an IGBT in assessing the lifetime of a STATCOM operating for power factor correction of the load. From 5-minute data load profiles available, the lifetime is estimated to be at 3.4 years.« less

High Frequency Alternator, Power Frequency Conversion (HFA-PFC) Technology for Lightweight Tactical Power Generation

DTIC Science & Technology

1995-09-22

Modules 345-800 Amperes/400-3000 Votts - Current and Thermal Ratings of Module * Circuit Currents Element Data Model* Current Thermal Units...IGBTs modules (Powerex) 56 Main components for rectifiers, Diode Bridge modules (Powerex) 65 Heat Sinks (Aavid Engineering) 85 Westinghouse...exciter circuit , are not reliable enough for military applications, and they were replaced by brushless alternators. The brushless AC alternator

Starter/generator testing

NASA Astrophysics Data System (ADS)

Anon

1994-10-01

Sundstrand Aerospace and GE Aircraft Engines have studied the switched reluctance machine for use as an integral starter/generator for future aircraft engines. They have conducted an initial, low-power testing of the starter/generator, which is based on power inverters using IGBT-technology semiconductors, to verify its feasibility in the externally mounted version of the integral starter/generator. This preliminary testing of the 250-kW starter/generator reveals favorable results.

Methodology for Analysis, Modeling and Simulation of Airport Gate-waiting Delays

NASA Astrophysics Data System (ADS)

Wang, Jianfeng

This dissertation presents methodologies to estimate gate-waiting delays from historical data, to identify gate-waiting-delay functional causes in major U.S. airports, and to evaluate the impact of gate operation disruptions and mitigation strategies on gate-waiting delay. Airport gates are a resource of congestion in the air transportation system. When an arriving flight cannot pull into its gate, the delay it experiences is called gate-waiting delay. Some possible reasons for gate-waiting delay are: the gate is occupied, gate staff or equipment is unavailable, the weather prevents the use of the gate (e.g. lightning), or the airline has a preferred gate assignment. Gate-waiting delays potentially stay with the aircraft throughout the day (unless they are absorbed), adding costs to passengers and the airlines. As the volume of flights increases, ensuring that airport gates do not become a choke point of the system is critical. The first part of the dissertation presents a methodology for estimating gate-waiting delays based on historical, publicly available sources. Analysis of gate-waiting delays at major U.S. airports in the summer of 2007 identifies the following. (i) Gate-waiting delay is not a significant problem on majority of days; however, the worst delay days (e.g. 4% of the days at LGA) are extreme outliers. (ii) The Atlanta International Airport (ATL), the John F. Kennedy International Airport (JFK), the Dallas/Fort Worth International Airport (DFW) and the Philadelphia International Airport (PHL) experience the highest gate-waiting delays among major U.S. airports. (iii) There is a significant gate-waiting-delay difference between airlines due to a disproportional gate allocation. (iv) Gate-waiting delay is sensitive to time of a day and schedule peaks. According to basic principles of queueing theory, gate-waiting delay can be attributed to over-scheduling, higher-than-scheduled arrival rate, longer-than-scheduled gate-occupancy time, and reduced gate availability. Analysis of the worst days at six major airports in the summer of 2007 indicates that major gate-waiting delays are primarily due to operational disruptions---specifically, extended gate occupancy time, reduced gate availability and higher-than-scheduled arrival rate (usually due to arrival delay). Major gate-waiting delays are not a result of over-scheduling. The second part of this dissertation presents a simulation model to evaluate the impact of gate operational disruptions and gate-waiting-delay mitigation strategies, including building new gates, implementing common gates, using overnight off-gate parking and adopting self-docking gates. Simulation results show the following effects of disruptions: (i) The impact of arrival delay in a time window (e.g. 7 pm to 9 pm) on gate-waiting delay is bounded. (ii) The impact of longer-than-scheduled gate-occupancy times in a time window on gate-waiting delay can be unbounded and gate-waiting delay can increase linearly as the disruption level increases. (iii) Small reductions in gate availability have a small impact on gate-waiting delay due to slack gate capacity, while larger reductions have a non-linear impact as slack gate capacity is used up. Simulation results show the following effects of mitigation strategies: (i) Implementing common gates is an effective mitigation strategy, especially for airports with a flight schedule not dominated by one carrier, such as LGA. (ii) The overnight off-gate rule is effective in mitigating gate-waiting delay for flights stranded overnight following departure cancellations. This is especially true at airports where the gate utilization is at maximum overnight, such as LGA and DFW. The overnight off-gate rule can also be very effective to mitigate gate-waiting delay due to operational disruptions in evenings. (iii) Self-docking gates are effective in mitigating gate-waiting delay due to reduced gate availability.

Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

NASA Astrophysics Data System (ADS)

Zhang, Zhe; Andersen, Michael A. E.

2015-04-01

Dielectric electro active polymer (DEAP) can be used in actuation, sensing and energy harvesting applications, but driving the DEAP based actuators and generators has three main challenges from a power electronics standpoint, i.e. high voltage (around 2.5 kV), nonlinearity, and capacitive behavior. In this paper, electronics divers for heating valves, loud speakers, incremental motors, and energy harvesting are reviewed, studied and developed in accordance with their corresponding specifications. Due to the simplicity and low power capacity (below 10W), the reversible Fly-back converters with both magnetic and piezoelectric transformers are employed for the heating valve and incremental motor application, where only ON/OFF regulation is adopted for energy saving; as for DEAP based energy harvesting, the noisolated Buck/Boost converter is used, due to the system high power capacity (above 100W), but the voltage balancing across the series-connected high voltage IGBTs is a critical issue and accordingly a novel gate driver circuitry is proposed and equipped; due to the requirements of the audio products, such as low distortion and noise, the multi-level Buck converter based Class-D amplifier, because of its high control linearity, is implemented for the loud speaker applications. A synthesis among those converter topologies and control techniques is given; therefore, for those DEAP based applications, their diversity and similarity of electronics drivers, as well as the key technologies employed are analyzed. Therefore a whole picture of how to choose the proper topologies can be revealed. Finally, the design guidelines in order to achieve high efficiency and reliability are discussed.

Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material.

PubMed

Chen, Yangyang; Xing, Wenyu; Wang, Xirui; Shen, Bowen; Yuan, Wei; Su, Tang; Ma, Yang; Yao, Yunyan; Zhong, Jiangnan; Yun, Yu; Xie, X C; Jia, Shuang; Han, Wei

2018-01-10

Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr 2 Ge 2 Te 6 . Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect on  the channel resistance of Cr 2 Ge 2 Te 6 devices (<5% difference), which suggests the electrostatic field effect as the mechanism on non-oxide materials. Moreover, our results show that ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO 2 .

Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Zhao, Jingtao; Zhao, Zhenguo; Chen, Zidong; Lin, Zhaojun; Xu, Fukai

2017-12-01

In this study, we have investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with floating gate structures using the measured capacitancevoltage (C-V) and current-voltage (I-V) characteristics. It is found that the two-dimensional electron gas (2DEG) density under the central gate cannot be changed by the floating gate structures. However, the floating gate structures can cause the strain variation in the barrier layer, which lead to the non-uniform distribution of the polarization charges, then induce a polarization Coulomb field and scatter the 2DEG. More floating gate structures and closer distance between the floating gates and the central gate will result in stronger scattering effect of the 2DEG.

A pH sensor with a double-gate silicon nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Kim, Jee-Yeon; Seol, Myeong-Lok; Baek, David J.; Guo, Zheng; Kim, Chang-Hoon; Choi, Sung-Jin; Choi, Yang-Kyu

2013-02-01

A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness.

Enhanced transconductance in a double-gate graphene field-effect transistor

NASA Astrophysics Data System (ADS)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yang; Chen, Xiaolong; Ye, Weiguang

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed,more » possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.« less

Field effect transistor and method of construction thereof

NASA Technical Reports Server (NTRS)

Fletner, W. R. (Inventor)

1978-01-01

A field effect transistor is constructed by placing a semi-conductor layer on an insulating substrate so that the gate region is separated from source and drain regions. The gate electrode and gate region of the layer are of generally reduced length, the gate region being of greatest length on its surface closest to the gate electrode. This is accomplished by initially creating a relatively large gate region of one polarity, and then reversing the polarity of a central portion of this gate region by ion bombardment, thus achieving a narrower final gate region of the stated configuration.

Radiation Effects On Emerging Electronic Materials And Devices

DTIC Science & Technology

2010-01-17

RADIATION EFFECTS ON EMERGING ELECTRONIC MATERIALS AND DEVICES FINAL PERFORMANCE REPORT PREPARED FOR: Kitt Reinhardt AFOSR/NE 875 N...and the other with metal gates and a high-K gate dielectric. These devices were programmed using both back-gate pulse and gate induced drain leakage... metal gate process GIDL method Fig. 1. Sensing margin as a function of total ionizing dose for nMOS 1T-DRAM cells programmed by back-gate pulse and

Characteristics Of Ferroelectric Logic Gates Using a Spice-Based Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2005-01-01

A SPICE-based model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. This model was used to generate the I-V characteristic of several logic gates. The use of ferroelectric field effect transistors in memory circuits is being developed by several organizations. The use of FFETs in other circuits, both analog and digital needs to be better understood. The ability of FFETs to have different characteristics depending on the initial polarization can be used to create logic gates. These gates can have properties not available to standard CMOS logic gates, such as memory, reconfigurability and memory. This paper investigates basic properties of FFET logic gates. It models FFET inverter, NAND gate and multi-input NAND gate. The I-V characteristics of the gates are presented as well as transfer characteristics and timing. The model used is a SPICE-based model developed from empirical data from actual Ferroelectric transistors. It simulates all major characteristics of the ferroelectric transistor, including polarization, hysteresis and decay. Contrasts are made of the differences between FFET logic gates and CMOS logic gates. FFET parameters are varied to show the effect on the overall gate. A recodigurable gate is investigated which is not possible with CMOS circuits. The paper concludes that FFETs can be used in logic gates and have several advantages over standard CMOS gates.

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Polzin, Kurt A.; Hudgins, Jerry L.

2014-01-01

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of µs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high-power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre-ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn-off Thyristors (GTOs) and Silicon-Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast-switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn-off), and lower-magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

NASA Astrophysics Data System (ADS)

Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

2018-04-01

We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-01

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-17

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Gate-Controllable Magneto-optic Kerr Effect in Layered Collinear Antiferromagnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sivadas, Nikhil; Okamoto, Satoshi; Xiao, Di

2016-12-23

In this paper, using symmetry arguments and a tight-binding model, we show that for layered collinear antiferromagnets, magneto-optic effects can be generated and manipulated by controlling crystal symmetries through a gate voltage. This provides a promising route for electric field manipulation of the magneto-optic effects without modifying the underlying magnetic structure. We further demonstrate the gate control of the magneto-optic Kerr effect (MOKE) in bilayer MnPSe 3 using first-principles calculations. Finally, the field-induced inversion symmetry breaking effect leads to gate-controllable MOKE, whose direction of rotation can be switched by the reversal of the gate voltage.

A pulse-burst laser system for Thomson scattering on NSTX-U

NASA Astrophysics Data System (ADS)

Den Hartog, D. J.; Borchardt, M. T.; Holly, D. J.; Diallo, A.; LeBlanc, B.

2017-10-01

A pulse-burst laser system has been built for Thomson scattering on NSTX-U, and is currently being integrated into the NSTX-U Thomson scattering diagnostic system. The laser will be operated in three distinct modes. The base mode is continuous 30 Hz rep rate, and is the standard operating mode of the laser. The base mode will be interrupted to produce a "slow burst" (specified 1 kHz rep rate for 50 ms) or a "fast burst" (specified 10 kHz rep rate for 5 ms). The combination of base mode→ interruption→ burst mode is new and has not been implemented on any previous pulse-burst laser system. Laser pulsing is halted for a set period (~ 1 minute) following a burst to allow the YAG rods to cool; this type of operation is called a heat-capacity laser. The laser is Nd:YAG operated at 1064 nm, q-switched to produce >= 1.5 J pulses with ~ 20 ns FWHM. It is flashlamp pumped, with dual-rod oscillator (9 mm) and dual-rod amplifier (12 mm). Variable pulsewidth drive of the flashlamps is accomplished by IGBT (insulated gate bipolar transistor) switching of electrolytic capacitor banks. Direct control of the laser Pockels cell drive enables optimal pulse energy extraction. The laser system has demonstrated compliance with all specifications, and is capable of exceeding design specifications by significant margins, e.g., higher rep rates for longer burst periods. Burst operation of this laser system will be used to capture fast time evolution of the electron temperature and density profiles during events such as ELMs, the L-H transition, and various MHD modes.

Recent advances of high voltage AlGaN/GaN power HFETs

NASA Astrophysics Data System (ADS)

Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

2009-02-01

We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

PubMed Central

Sun, Yi-Lin; Xie, Dan; Xu, Jian-Long; Zhang, Cheng; Dai, Rui-Xuan; Li, Xian; Meng, Xiang-Jian; Zhu, Hong-Wei

2016-01-01

Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect. PMID:26980284

Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Yang, Ming; Ji, Qizheng; Gao, Zhiliang; Zhang, Shufeng; Lin, Zhaojun; Yuan, Yafei; Song, Bo; Mei, Gaofeng; Lu, Ziwei; He, Jihao

2017-11-01

For the fabricated AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths, the gate-channel carrier mobility is experimentally obtained from the measured current-voltage and capacitance-voltage curves. Under each gate voltage, the mobility gets lower with gate width increasing. Analysis shows that the phenomenon results from the polarization Coulomb field (PCF) scattering, which originates from the irregularly distributed polarization charges at the AlGaN/GaN interface. The device with a larger gate width is with a larger PCF scattering potential and a stronger PCF scattering intensity. As a function of gate width, PCF scattering potential shows a same trend with the mobility variation. And the theoretically calculated mobility values fits well with the experimentally obtained values. Varying gate widths will be a new perspective for the improvement of device characteristics by modulating the gate-channel carrier mobility.

Minority Carrier Lifetimes in Halide Chemical Vapor Deposition SiC

DTIC Science & Technology

2006-06-01

less efficient than IGBTs , or thyristors. In other words, with the increase of blocking voltage, bipolar devices are preferred. The on-state losses...was inductively heated by a 50 kW generator operating at the frequency of approximately 10 kHz. The HCVD reaction zone is similar in shape and...C, the furnace was backfilled with argon to the pressure of 600 Torr and the temperature was increased slowly to the growth temperature. Growth

IGBT Switching Characteristic Curve Embedded Half-Bridge MMC Modelling and Real Time Simulation Realization

NASA Astrophysics Data System (ADS)

Zhengang, Lu; Hongyang, Yu; Xi, Yang

2017-05-01

The Modular Multilevel Converter (MMC) is one of the most attractive topologies in recent years for medium or high voltage industrial applications, such as high voltage dc transmission (HVDC) and medium voltage varying speed motor drive. The wide adoption of MMCs in industry is mainly due to its flexible expandability, transformer-less configuration, common dc bus, high reliability from redundancy, and so on. But, when the sub module number of MMC is more, the test of MMC controller will cost more time and effort. Hardware in the loop test based on real time simulator will save a lot of time and money caused by the MMC test. And due to the flexible of HIL, it becomes more and more popular in the industry area. The MMC modelling method remains an important issue for the MMC HIL test. Specifically, the VSC model should realistically reflect the nonlinear device switching characteristics, switching and conduction losses, tailing current, and diode reverse recovery behaviour of a realistic converter. In this paper, an IGBT switching characteristic curve embedded half-bridge MMC modelling method is proposed. This method is based on the switching curve referring and sample circuit calculation, and it is sample for implementation. Based on the proposed method, a FPGA real time simulation is carried out with 200ns sample time. The real time simulation results show the proposed method is correct.

The separate and combined effects of monoamine oxidase inhibition and nicotine on P50 sensory gating.

PubMed

Smith, Dylan M; Fisher, Derek; Blier, Pierre; Illivitsky, Vadim; Knott, Verner

2015-06-01

The cognitive effects of nicotine in humans remain a topic of great interest, due to the continued prevalence of cigarette smoking in society as well as the hypothesis that cognitively impaired populations such as schizophrenia patients use nicotine as a means of self-medicating against deficits of sensory gating. However, chronic smoking can predispose individuals to robust monoamine oxidase (MAO) inhibition, and thus far, the effect of MAO inhibition on human sensory gating is unknown. In this study, we investigated the effects of both nicotine (6-mg gum) and pharmacologically induced MAO-A inhibition via moclobemide (75 mg) on P50 event-related potential-indexed sensory gating in a sample of 24 healthy non-smoking males. Ratio score (rP50) measured gating revealed significant improvement in auditory stimulus suppression after combined nicotine and MAO-A inhibition compared to placebo and to the nicotine-alone condition. This nicotine + MAO-A inhibition-induced efficient gating was consistent regardless of participants' baseline (placebo) gating efficiency, despite the observation that nicotine in the absence of MAO-A inhibition exhibited a detrimental effect on gating in participants with high baseline suppression ratios. Nicotine and monoamine oxidase-inhibiting agents in tobacco smoke appear to exert a synergistic effect on sensory gating, which may contribute to the elevated dependence rates seen in populations with cognitive deficits such as schizophrenia.

Thick layered semiconductor devices with water top-gates: High on-off ratio field-effect transistors and aqueous sensors.

PubMed

Huang, Yuan; Sutter, Eli; Wu, Liangmei; Xu, Hong; Bao, Lihong; Gao, Hong-Jun; Zhou, Xingjiang; Sutter, Peter

2018-06-21

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for field-effect switching of layered semiconductors including SnS2, MoS2, and black phosphorus. The DI water gate is easily fabricated, can sustain rapid bias changes, and its efficient coupling to layered materials provides high on-off current ratios, near-ideal sub-threshold swing, and enhanced short-channel behavior even for FETs with thick, bulk-like channels where such control is difficult to realize with conventional back-gating. Screening by the high-k solution gate eliminates hysteresis due to surface and interface trap states and substantially enhances the field-effect mobility. The onset of water electrolysis sets the ultimate limit to DI water gating at large negative gate bias. Measurements in this regime show promise for aqueous sensing, demonstrated here by the amperometric detection of glucose in aqueous solution. DI water gating of layered semiconductors can be harnessed in research on novel materials and devices, and it may with further development find broad applications in microelectronics and sensing.

Effects of negative gate-bias stress on the performance of solution-processed zinc-oxide transistors

NASA Astrophysics Data System (ADS)

Kim, Dongwook; Lee, Woo-Sub; Shin, Hyunji; Choi, Jong Sun; Zhang, Xue; Park, Jaehoon; Hwang, Jaeeun; Kim, Hongdoo; Bae, Jin-Hyuk

2014-08-01

We studied the effects of negative gate-bias stress on the electrical characteristics of top-contact zinc-oxide (ZnO) thin-film transistors (TFTs), which were fabricated by spin coating a ZnO solution onto a silicon-nitride gate dielectric layer. The negative gate-bias stress caused characteristic degradations in the on-state currents and the field-effect mobility of the fabricated ZnO TFTs. Additionally, a decrease in the off-state currents and a positive shift in the threshold voltage occurred with increasing stress time. These results indicate that the negative gate-bias stress caused an injection of electrons into the gate dielectric, thereby deteriorating the TFT's performance.

Improved scatterer property estimates from ultrasound backscatter for small gate lengths using a gate-edge correction factor

NASA Astrophysics Data System (ADS)

Oelze, Michael L.; O'Brien, William D.

2004-11-01

Backscattered rf signals used to construct conventional ultrasound B-mode images contain frequency-dependent information that can be examined through the backscattered power spectrum. The backscattered power spectrum is found by taking the magnitude squared of the Fourier transform of a gated time segment corresponding to a region in the scattering volume. When a time segment is gated, the edges of the gated regions change the frequency content of the backscattered power spectrum due to truncating of the waveform. Tapered windows, like the Hanning window, and longer gate lengths reduce the relative contribution of the gate-edge effects. A new gate-edge correction factor was developed that partially accounted for the edge effects. The gate-edge correction factor gave more accurate estimates of scatterer properties at small gate lengths compared to conventional windowing functions. The gate-edge correction factor gave estimates of scatterer properties within 5% of actual values at very small gate lengths (less than 5 spatial pulse lengths) in both simulations and from measurements on glass-bead phantoms. While the gate-edge correction factor gave higher accuracy of estimates at smaller gate lengths, the precision of estimates was not improved at small gate lengths over conventional windowing functions. .

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

NASA Astrophysics Data System (ADS)

Shin, Yong Hyeon; Bae, Min Soo; Park, Chuntaek; Park, Joung Won; Park, Hyunwoo; Lee, Yong Ju; Yun, Ilgu

2018-06-01

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young’s approximation based solution for one-dimensional Poisson’s equations the total inversion charge density (Q inv ) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel’s surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

Coupling of activation and inactivation gate in a K+-channel: potassium and ligand sensitivity

PubMed Central

Ader, Christian; Schneider, Robert; Hornig, Sönke; Velisetty, Phanindra; Vardanyan, Vitya; Giller, Karin; Ohmert, Iris; Becker, Stefan; Pongs, Olaf; Baldus, Marc

2009-01-01

Potassium (K+)-channel gating is choreographed by a complex interplay between external stimuli, K+ concentration and lipidic environment. We combined solid-state NMR and electrophysiological experiments on a chimeric KcsA–Kv1.3 channel to delineate K+, pH and blocker effects on channel structure and function in a membrane setting. Our data show that pH-induced activation is correlated with protonation of glutamate residues at or near the activation gate. Moreover, K+ and channel blockers distinctly affect the open probability of both the inactivation gate comprising the selectivity filter of the channel and the activation gate. The results indicate that the two gates are coupled and that effects of the permeant K+ ion on the inactivation gate modulate activation-gate opening. Our data suggest a mechanism for controlling coordinated and sequential opening and closing of activation and inactivation gates in the K+-channel pore. PMID:19661921

Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

NASA Astrophysics Data System (ADS)

Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

2018-02-01

The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

Effect of gate bias sweep rate on the threshold voltage of in-plane gate nanowire transistor

NASA Astrophysics Data System (ADS)

Liu, H. X.; Li, J.; Tan, R. R.

2018-01-01

In2O3 nanowire electric-double-layer (EDL) transistors with in-plane gate gated by SiO2 solid-electrolyte are fabricated on transparent glass substrates. The gate voltage sweep rates can effectively modulate the threshold voltage (Vth) of nanowire device. Both depletion mode and enhancement mode are realized, and the Vth shift of the nanowire transistors is estimated to be 0.73V (without light). This phenomenon is due to increased adsorption of oxygen on the nanowire surface by the slower gate voltage sweep rates. Adsorbed oxygens capture electrons and cause a surface of nanowire channel was depleted. The operation voltage of transistor was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance. These transparent in-plane gate nanowire transistors are promising for “see-through” nanoscale sensors.

Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.

PubMed

Ji, Hyunjin; Joo, Min-Kyu; Yi, Hojoon; Choi, Homin; Gul, Hamza Zad; Ghimire, Mohan Kumar; Lim, Seong Chu

2017-08-30

There is a general consensus that the carrier mobility in a field-effect transistor (FET) made of semiconducting transition-metal dichalcogenides (s-TMDs) is severely degraded by the trapping/detrapping and Coulomb scattering of carriers by ionic charges in the gate oxides. Using a double-gated (DG) MoTe 2 FET, we modulated and enhanced the carrier mobility by adjusting the top- and bottom-gate biases. The relevant mechanism for mobility tuning in this device was explored using static DC and low-frequency (LF) noise characterizations. In the investigations, LF-noise analysis revealed that for a strong back-gate bias the Coulomb scattering of carriers by ionized traps in the gate dielectrics is strongly screened by accumulation charges. This significantly reduces the electrostatic scattering of channel carriers by the interface trap sites, resulting in increased mobility. The reduction of the number of effective trap sites also depends on the gate bias, implying that owing to the gate bias, the carriers are shifted inside the channel. Thus, the number of active trap sites decreases as the carriers are repelled from the interface by the gate bias. The gate-controlled Coulomb-scattering parameter and the trap-site density provide new handles for improving the carrier mobility in TMDs, in a fundamentally different way from dielectric screening observed in previous studies.

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

2000-01-01

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Dosimetric evaluation of the interplay effect in respiratory-gated RapidArc radiation therapy.

PubMed

Riley, Craig; Yang, Yong; Li, Tianfang; Zhang, Yongqian; Heron, Dwight E; Huq, M Saiful

2014-01-01

Volumetric modulated arc therapy (VMAT) with gating capability has had increasing adoption in many clinics in the United States. In this new technique, dose rate, gantry rotation speed, and the leaf motion speed of multileaf collimators (MLCs) are modulated dynamically during gated beam delivery to achieve highly conformal dose coverage of the target and normal tissue sparing. Compared with the traditional gated intensity-modulated radiation therapy technique, this complicated beam delivery technique may result in larger dose errors due to the intrafraction tumor motion. The purpose of this work is to evaluate the dosimetric influence of the interplay effect for the respiration-gated VMAT technique (RapidArc, Varian Medical Systems, Palo Alto, CA). Our work consisted of two parts: (1) Investigate the interplay effect for different target residual errors during gated RapidArc delivery using a one-dimensional moving phantom capable of producing stable sinusoidal movement; (2) Evaluate the dosimetric influence in ten clinical patients' treatment plans using a moving phantom driven with a patient-specific respiratory curve. For the first part of this study, four plans were created with a spherical target for varying residual motion of 0.25, 0.5, 0.75, and 1.0 cm. Appropriate gating windows were applied for each. The dosimetric effect was evaluated using EDR2 film by comparing the gated delivery with static delivery. For the second part of the project, ten gated lung stereotactic body radiotherapy cases were selected and reoptimized to be delivered by the gated RapidArc technique. These plans were delivered to a phantom, and again the gated treatments were compared to static deliveries by the same methods. For regular sinusoidal motion, the dose delivered to the target was not substantially affected by the gating windows when evaluated with the gamma statistics, suggesting the interplay effect has a small role in respiratory-gated RapidArc therapy. Varied results were seen when gated therapy was performed on the patient plans that could only be attributed to differences in patient respiratory patterns. Patients whose plans had the largest percentage of pixels failing the gamma statistics exhibited irregular breathing patterns including substantial interpatient variation in depth of respiration. The interplay effect has a limited impact on gated RapidArc therapy when evaluated with a linear phantom. Variations in patient breathing patterns, however, are of much greater clinical significance. Caution must be taken when evaluating patients' respiratory efforts for gated arc therapy.

Effect of respiratory and cardiac gating on the major diffusion-imaging metrics

PubMed Central

Hamaguchi, Hiroyuki; Sugimori, Hiroyuki; Nakanishi, Mitsuhiro; Nakagawa, Shin; Fujiwara, Taro; Yoshida, Hirokazu; Takamori, Sayaka; Shirato, Hiroki

2016-01-01

The effect of respiratory gating on the major diffusion-imaging metrics and that of cardiac gating on mean kurtosis (MK) are not known. For evaluation of whether the major diffusion-imaging metrics—MK, fractional anisotropy (FA), and mean diffusivity (MD) of the brain—varied between gated and non-gated acquisitions, respiratory-gated, cardiac-gated, and non-gated diffusion-imaging of the brain were performed in 10 healthy volunteers. MK, FA, and MD maps were constructed for all acquisitions, and the histograms were constructed. The normalized peak height and location of the histograms were compared among the acquisitions by use of Friedman and post hoc Wilcoxon tests. The effect of the repetition time (TR) on the diffusion-imaging metrics was also tested, and we corrected for its variation among acquisitions, if necessary. The results showed a shift in the peak location of the MK and MD histograms to the right with an increase in TR (p ≤ 0.01). The corrected peak location of the MK histograms, the normalized peak height of the FA histograms, the normalized peak height and the corrected peak location of the MD histograms varied significantly between the gated and non-gated acquisitions (p < 0.05). These results imply an influence of respiration and cardiac pulsation on the major diffusion-imaging metrics. The gating conditions must be kept identical if reproducible results are to be achieved. PMID:27073115

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

PubMed Central

Heo, Jae Sang; Choi, Seungbeom; Jo, Jeong-Wan; Kang, Jingu; Park, Ho-Hyun; Kim, Yong-Hoon; Park, Sung Kyu

2017-01-01

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric. PMID:28772972

[The anesthetic effects of Gow-Gates technique of inferior alveolar nerve block in impacted mandibular third molar extraction].

PubMed

Yang, Jieping; Liu, Wei; Gao, Qinghong

2013-08-01

To evaluate the anesthetic effects and safety of Gow-Gates technique of inferior alveolar nerve block in impacted mandibular third molar extraction. A split-mouth study was designed. The bilateral impacted mandibular third molar of 32 participants were divided into Gow-Gates technique of inferior alveolar nerve block (Gow-Gates group) and conventional technique of inferior alveolar nerve block (conventional group) randomly with third molar extracted. The anesthetic effects and adverse events were recorded. All the participants completed the research. The anesthetic success rate was 96.9% in Gow-Gates group and 90.6% in conventional group with no statistical difference ( P= 0.317); but when comparing the anesthesia grade, Gow-Gates group had a 96.9% of grade A and B, and conventional group had a rate of 78.1% (P = 0.034). And the Gow-Gates group had a much lower withdrawn bleeding than conventional group (P = 0.025). Two groups had no hematoma. Gow-Gates technique had a reliable anesthesia effects and safety in impacted mandibular third molar extraction and could be chosen as a candidate for the conventional inferior alveolar nerve block.

CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

NASA Astrophysics Data System (ADS)

Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

2018-04-01

Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

Field-effect P-N junction

DOEpatents

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO 3/NdGaO 3 heterostructures

DOE PAGES

Dong, Yongqi; Xu, Haoran; Luo, Zhenlin; ...

2017-05-16

The effect of gate voltage polarity on the behavior of NdNiO 3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is providedmore » for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni 3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.« less

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

Effects of a ketogenic diet on auditory gating in DBA/2 mice: A proof-of-concept study.

PubMed

Tregellas, Jason R; Smucny, Jason; Legget, Kristina T; Stevens, Karen E

2015-12-01

Although the ketogenic diet has shown promise in a pilot study and case report in schizophrenia, its effects in animal models of hypothesized disease mechanisms are unknown. This study examined effects of treatment with the ketogenic diet on hippocampal P20/N40 gating in DBA/2 mice, a translational endophenotype that mirrors inhibitory deficits in P50 sensory gating in schizophrenia patients. As expected, the diet increased blood ketone levels. Animals with the highest ketone levels showed the lowest P20/N40 gating ratios. These preliminary results suggest that the ketogenic diet may effectively target sensory gating deficits and is a promising area for additional research in schizophrenia. Published by Elsevier B.V.

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Minkyu; Um, Jae Gwang; Park, Min Sang

We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of Inmore » metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.« less

Effect of respiratory and cardiac gating on the major diffusion-imaging metrics.

PubMed

Hamaguchi, Hiroyuki; Tha, Khin Khin; Sugimori, Hiroyuki; Nakanishi, Mitsuhiro; Nakagawa, Shin; Fujiwara, Taro; Yoshida, Hirokazu; Takamori, Sayaka; Shirato, Hiroki

2016-08-01

The effect of respiratory gating on the major diffusion-imaging metrics and that of cardiac gating on mean kurtosis (MK) are not known. For evaluation of whether the major diffusion-imaging metrics-MK, fractional anisotropy (FA), and mean diffusivity (MD) of the brain-varied between gated and non-gated acquisitions, respiratory-gated, cardiac-gated, and non-gated diffusion-imaging of the brain were performed in 10 healthy volunteers. MK, FA, and MD maps were constructed for all acquisitions, and the histograms were constructed. The normalized peak height and location of the histograms were compared among the acquisitions by use of Friedman and post hoc Wilcoxon tests. The effect of the repetition time (TR) on the diffusion-imaging metrics was also tested, and we corrected for its variation among acquisitions, if necessary. The results showed a shift in the peak location of the MK and MD histograms to the right with an increase in TR (p ≤ 0.01). The corrected peak location of the MK histograms, the normalized peak height of the FA histograms, the normalized peak height and the corrected peak location of the MD histograms varied significantly between the gated and non-gated acquisitions (p < 0.05). These results imply an influence of respiration and cardiac pulsation on the major diffusion-imaging metrics. The gating conditions must be kept identical if reproducible results are to be achieved. © The Author(s) 2016.

Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

NASA Astrophysics Data System (ADS)

Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

2018-04-01

In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanne, A.; Movva, H. C. P.; Kang, S.

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriersmore » as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.« less

Feasibility analysis of a novel hybrid-type superconducting circuit breaker in multi-terminal HVDC networks

NASA Astrophysics Data System (ADS)

Khan, Umer Amir; Lee, Jong-Geon; Seo, In-Jin; Amir, Faisal; Lee, Bang-Wook

2015-11-01

Voltage source converter-based HVDC systems (VSC-HVDC) are a better alternative than conventional thyristor-based HVDC systems, especially for developing multi-terminal HVDC systems (MTDC). However, one of the key obstacles in developing MTDC is the absence of an adequate protection system that can quickly detect faults, locate the faulty line and trip the HVDC circuit breakers (DCCBs) to interrupt the DC fault current. In this paper, a novel hybrid-type superconducting circuit breaker (SDCCB) is proposed and feasibility analyses of its application in MTDC are presented. The SDCCB has a superconducting fault current limiter (SFCL) located in the main current path to limit fault currents until the final trip signal is received. After the trip signal the IGBT located in the main line commutates the current into a parallel line where DC current is forced to zero by the combination of IGBTs and surge arresters. Fault simulations for three-, four- and five-terminal MTDC were performed and SDCCB performance was evaluated in these MTDC. Passive current limitation by SFCL caused a significant reduction of fault current interruption stress in the SDCCB. It was observed that the DC current could change direction in MTDC after a fault and the SDCCB was modified to break the DC current in both the forward and reverse directions. The simulation results suggest that the proposed SDCCB could successfully suppress the DC fault current, cause a timely interruption, and isolate the faulty HVDC line in MTDC.

Maximum wind energy extraction strategies using power electronic converters

NASA Astrophysics Data System (ADS)

Wang, Quincy Qing

2003-10-01

This thesis focuses on maximum wind energy extraction strategies for achieving the highest energy output of variable speed wind turbine power generation systems. Power electronic converters and controls provide the basic platform to accomplish the research of this thesis in both hardware and software aspects. In order to send wind energy to a utility grid, a variable speed wind turbine requires a power electronic converter to convert a variable voltage variable frequency source into a fixed voltage fixed frequency supply. Generic single-phase and three-phase converter topologies, converter control methods for wind power generation, as well as the developed direct drive generator, are introduced in the thesis for establishing variable-speed wind energy conversion systems. Variable speed wind power generation system modeling and simulation are essential methods both for understanding the system behavior and for developing advanced system control strategies. Wind generation system components, including wind turbine, 1-phase IGBT inverter, 3-phase IGBT inverter, synchronous generator, and rectifier, are modeled in this thesis using MATLAB/SIMULINK. The simulation results have been verified by a commercial simulation software package, PSIM, and confirmed by field test results. Since the dynamic time constants for these individual models are much different, a creative approach has also been developed in this thesis to combine these models for entire wind power generation system simulation. An advanced maximum wind energy extraction strategy relies not only on proper system hardware design, but also on sophisticated software control algorithms. Based on literature review and computer simulation on wind turbine control algorithms, an intelligent maximum wind energy extraction control algorithm is proposed in this thesis. This algorithm has a unique on-line adaptation and optimization capability, which is able to achieve maximum wind energy conversion efficiency through continuously improving the performance of wind power generation systems. This algorithm is independent of wind power generation system characteristics, and does not need wind speed and turbine speed measurements. Therefore, it can be easily implemented into various wind energy generation systems with different turbine inertia and diverse system hardware environments. In addition to the detailed description of the proposed algorithm, computer simulation results are presented in the thesis to demonstrate the advantage of this algorithm. As a final confirmation of the algorithm feasibility, the algorithm has been implemented inside a single-phase IGBT inverter, and tested with a wind simulator system in research laboratory. Test results were found consistent with the simulation results. (Abstract shortened by UMI.)

G4-FETs as Universal and Programmable Logic Gates

NASA Technical Reports Server (NTRS)

Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin

2007-01-01

An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

Effect of gate skirts on pedestrian behavior at highway-rail grade crossings

DOT National Transportation Integrated Search

2013-12-31

The Federal Railroad Administration was interested in evaluating one type of pedestrian safety device, commonly known as gate skirts, that consists of a secondary horizontal hanging gate under the existing pedestrian gate to better block access to th...

Robustness against parametric noise of nonideal holonomic gates

NASA Astrophysics Data System (ADS)

Lupo, Cosmo; Aniello, Paolo; Napolitano, Mario; Florio, Giuseppe

2007-07-01

Holonomic gates for quantum computation are commonly considered to be robust against certain kinds of parametric noise, the cause of this robustness being the geometric character of the transformation achieved in the adiabatic limit. On the other hand, the effects of decoherence are expected to become more and more relevant when the adiabatic limit is approached. Starting from the system described by Florio [Phys. Rev. A 73, 022327 (2006)], here we discuss the behavior of nonideal holonomic gates at finite operational time, i.e., long before the adiabatic limit is reached. We have considered several models of parametric noise and studied the robustness of finite-time gates. The results obtained suggest that the finite-time gates present some effects of cancellation of the perturbations introduced by the noise which mimic the geometrical cancellation effect of standard holonomic gates. Nevertheless, a careful analysis of the results leads to the conclusion that these effects are related to a dynamical instead of a geometrical feature.

The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2/HfO2 laminated gate dielectrics

NASA Astrophysics Data System (ADS)

Chang, Ingram Yin-ku; Chen, Chun-Heng; Chiu, Fu-Chien; Lee, Joseph Ya-min

2007-11-01

Metal-oxide-semiconductor field-effect transistors with CeO2/HfO2 laminated gate dielectrics were fabricated. The transistors have a subthreshold slope of 74.9mV/decade. The interfacial properties were measured using gated diodes. The surface state density Dit was 9.78×1011cm-2eV-1. The surface-recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ) measured from the gated diode were about 6.11×103cm /s and 1.8×10-8s, respectively. The effective capture cross section of surface state (σs) extracted using the subthreshold-swing measurement and the gated diode was about 7.69×10-15cm2. The effective electron mobility of CeO2/HfO2 laminated gated transistors was determined to be 212cm2/Vs.

An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Fossum, Eric R.; Baier, Steven M.

1992-01-01

The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFET's) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods reducing the gate current are discussed.

Assessing self-reported use of new psychoactive substances: The impact of gate questions.

PubMed

Palamar, Joseph J; Acosta, Patricia; Calderón, Fermín Fernández; Sherman, Scott; Cleland, Charles M

2017-09-01

New psychoactive substances (NPS) continue to emerge; however, few surveys of substance use ask about NPS use. Research is needed to determine how to most effectively query use of NPS and other uncommon drugs. To determine whether prevalence of self-reported lifetime and past-year use differs depending on whether or not queries about NPS use are preceded by "gate questions." Gate questions utilize skip-logic, such that only a "yes" response to the use of specific drug class is followed by more extensive queries of drug use in that drug class. We surveyed 1,048 nightclub and dance festival attendees (42.6% female) entering randomly selected venues in New York City in 2016. Participants were randomized to gate vs. no gate question before each drug category. Analyses focus on eight categories classifying 145 compounds: NBOMe, 2C, DOx, "bath salts" (synthetic cathinones), other stimulants, tryptamines, dissociatives, and non-phenethylamine psychedelics. Participants, however, were asked about specific "bath salts" regardless of their response to the gate question to test reliability. We examined whether prevalence of use of each category differed by gate condition and whether gate effects were moderated by participant demographics. Prevalence of use of DOx, other stimulants, and non-phenethylamine psychedelics was higher without a gate question. Gate effects for other stimulants and non-phenethylamine psychedelics were larger among white participants and those attending parties less frequently. Almost one in ten (9.3%) participants reporting no "bath salt" use via the gate question later reported use of a "bath salt" such as mephedrone, methedrone, or methylone. Omitting gate questions may improve accuracy of data collected via self-report.

Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

PubMed

Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

2013-01-01

A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

PubMed Central

Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

2013-01-01

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

Improving pH sensitivity by field-induced charge regulation in flexible biopolymer electrolyte gated oxide transistors

NASA Astrophysics Data System (ADS)

Liu, Ning; Gan, Lu; Liu, Yu; Gui, Weijun; Li, Wei; Zhang, Xiaohang

2017-10-01

Electrical manipulation of charged ions in electrolyte-gated transistors is crucial for enhancing the electric-double-layer (EDL) gating effect, thereby improving their sensing abilities. Here, indium-zinc-oxide (IZO) based thin-film-transistors (TFTs) are fabricated on flexible plastic substrate. Acid doped chitosan-based biopolymer electrolyte is used as the gate dielectric, exhibiting an extremely high EDL capacitance. By regulating the dynamic EDL charging process with special gate potential profiles, the EDL gating effect of the chitosan-gated TFT is enhanced, and then resulting in higher pH sensitivities. An extremely high sensitivity of ∼57.8 mV/pH close to Nernst limit is achieved when the gate bias of the TFT sensor sweeps at a rate of 10 mV/s. Additionally, an enhanced sensitivity of 2630% in terms of current variation with pH range from 11 to 3 is realized when the device is operated in the ion depletion mode with a negative gate bias of -0.7 V. Robust ionic modulation is demonstrated in such chitosan-gated sensors. Efficiently driving the charged ions in the chitosan-gated IZO-TFT provides a new route for ultrasensitive, low voltage, and low-cost biochemical sensing technologies.

Hetero-Material Gate Doping-Less Tunnel FET and Its Misalignment Effects on Analog/RF Parameters

NASA Astrophysics Data System (ADS)

Anand, Sunny; Sarin, R. K.

2018-03-01

In this paper, with the use of a hetero-material gate technique, a tunnel field-effect transistor (TFET) subject to charge plasma technique is proposed, named as hetero-material gate doping-less tunnel FET (HMG-DLTFET) and a brief study has been done on the effects due to misalignment of the bottom gate towards drain (GMAD) and towards source (GMAS). The proposed devices provide better performance as the drive current increased by three times as compared to conventional doping-less TFET (DLTFET). The results are then analyzed and compared with conventional doped hetero-material gate double-gate tunnel FET (HMG-DGTFET). The analog/radiofrequency (RF) performance has been studied for both devices and comparative analysis has been done for different parameters such as drain current (I D), transconductance (g m), output conductance (g d), total gate capacitance (C gg) and cutoff frequency (f T). Both devices performed similarly in different misalignment configurations. When the bottom gate is perfectly aligned, the best performance is observed for both devices, but the doping-less device gives slightly more freedom for fabrication engineers as the amount of tolerance for HMG-DLTFET is better than that of HMG-DGTFET.

Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride-trifluoroethylene), as a gate dielectric

NASA Astrophysics Data System (ADS)

Miyata, Yusuke; Yoshimura, Takeshi; Ashida, Atsushi; Fujimura, Norifumi

2016-04-01

Si-based metal-ferroelectric-semiconductor (MFS) capacitors have been fabricated using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as a ferroelectric gate. The pinhole-free P(VDF-TrFE) thin films with high resistivity were able to be prepared by spin-coating directly onto hydrogen-terminated Si. The capacitance-voltage (C-V) characteristics of the ferroelectric gate field effect transistor (FeFET) using this MFS structure clearly show butterfly-shaped hysteresis originating from the ferroelectricity, indicating carrier modulation on the Si surface at gate voltages below 2 V. The drain current-gate voltage (I D-V G) characteristics also show counterclockwise hysteresis at gate voltages below 5 V. This is the first report on the low-voltage operation of a Si-based FeFET using P(VDF-TrFE) as a gate dielectric. This organic gate FeFET without any insulator layer at the ferroelectric/Si interface should be one of the promising devices for overcoming the critical issues of the FeFET, such as depolarization field and a decrease in the gate voltage.

Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor

NASA Astrophysics Data System (ADS)

Verma, Madhulika; Sharma, Dheeraj; Pandey, Sunil; Nigam, Kaushal; Kondekar, P. N.

2017-01-01

In this work, we perform a comparative analysis between single and dual metal dielectrically modulated tunnel field-effect transistors (DMTFETs) for the application of label free biosensor. For this purpose, two different gate material with work-function as ϕM 1 and ϕM 2 are used in short-gate DMTFET, where ϕM 1 represents the work-function of gate M1 near to the drain end, while ϕM 2 denotes the work-function of gate M2 near to the source end. A nanogap cavity in the gate dielectric is formed by removing the selected portion of gate oxide for sensing the biomolecules. To investigate the sensitivity of these biosensors, dielectric constant and charge density within the cavity region are considered as governing parameters. The work-function of gate M2 is optimized and considered less than M1 to achieve abruptness at the source/channel junction, which results in better tunneling and improved ON-state current. The ATLAS device simulations show that dual metal SG-DMTFETs attains higher ON-state current and drain current sensitivity as compared to its counterpart device. Finally, a dual metal short-gate (DSG) biosensor is compared with the single metal short-gate (SG), single metal full-gate (FG), and dual metal full-gate (DFG) biosensors to analyse structurally enhanced conjugation effect on gate-channel coupling.

Integrating Partial Polarization into a Metal-Ferroelectric-Semiconductor Field Effect Transistor Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

The ferroelectric channel in a Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFSFET) can partially change its polarization when the gate voltage near the polarization threshold voltage. This causes the MFSFET Drain current to change with repeated pulses of the same gate voltage near the polarization threshold voltage. A previously developed model [11, based on the Fermi-Dirac function, assumed that for a given gate voltage and channel polarization, a sin-le Drain current value would be generated. A study has been done to characterize the effects of partial polarization on the Drain current of a MFSFET. These effects have been described mathematically and these equations have been incorporated into a more comprehensive mathematical model of the MFSFET. The model takes into account the hysteresis nature of the MFSFET and the time dependent decay as well as the effects of partial polarization. This model defines the Drain current based on calculating the degree of polarization from previous gate pulses, the present Gate voltage, and the amount of time since the last Gate volta-e pulse.

Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

NASA Astrophysics Data System (ADS)

Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

2001-12-01

We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism

DOE PAGES

Zhao, Shishun; Zhou, Ziyao; Peng, Bin; ...

2017-03-03

Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. A key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME] +[TFSI] -/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. Furthermore, a reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient ofmore » ≈146 Oe V -1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. Our work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.« less

Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Shishun; Zhou, Ziyao; Peng, Bin

Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. A key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME] +[TFSI] -/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. Furthermore, a reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient ofmore » ≈146 Oe V -1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. Our work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.« less

Mesoscopic Field-Effect-Induced Devices in Depleted Two-Dimensional Electron Systems

NASA Astrophysics Data System (ADS)

Bachsoliani, N.; Platonov, S.; Wieck, A. D.; Ludwig, S.

2017-12-01

Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs /(Al ,Ga )As heterostructure enable a large variety of applications ranging from fundamental research to high-speed transistors. Electrical circuits are thereby commonly defined by creating barriers for carriers by the selective depletion of a preexisting 2DES. We explore an alternative approach: we deplete the 2DES globally by applying a negative voltage to a global top gate and screen the electric field of the top gate only locally using nanoscale gates placed on the wafer surface between the plane of the 2DES and the top gate. Free carriers are located beneath the screen gates, and their properties can be controlled by means of geometry and applied voltages. This method promises considerable advantages for the definition of complex circuits by the electric-field effect, as it allows us to reduce the number of gates and simplify gate geometries. Examples are carrier systems with ring topology or large arrays of quantum dots. We present a first exploration of this method pursuing field effect, Hall effect, and Aharonov-Bohm measurements to study electrostatic, dynamic, and coherent properties.

TH-CD-207A-04: Optimized Respiratory Gating for Abnormal Breathers in Pancreatic SBRT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, W; Miften, M; Schefter, T

Purpose: Pancreatic SBRT is uniquely challenging due to both the erratic/unstable motion of the pancreas and the close proximity of the radiosensitive small bowel. Respiratory gating can mitigate this effect, but the irregularity of motion severely affects traditional phase-based gating. The purpose of this study was to analyze real-time motion data of pancreatic tumors to optimize the efficacy and accuracy of respiratory gating, with the overall goal of enabling dose escalated pancreatic SBRT. Methods: Fifteen pancreatic SBRT patients received 30–33 Gy in 5 fractions on a Varian TrueBeam STx unit. Abdominal compression was used to reduce the amplitude of tumormore » motion, and daily cone-beam computed tomography (CBCT) scans were acquired prior to each treatment for target localization purposes. For this study, breathing data (phase and amplitude) were collected during each CBCT scan using Varian’s Real-Time Position Management system. An in-house template matching technique was used to track the superior-inferior motion of implanted fiducial markers in CBCT projection images. Using tumor motion and breathing data, phase-based or amplitude-based respiratory gating was simulated for all 75 fractions, targeting either end-exhalation or end-inhalation phases of breathing. Results: For the average patient, gating at end-exhalation offered the best reductions in effective motion for equal duty cycles. However, optimal central phase angle varied widely (range: 0–92%, mean±SD: 49±12%), and phase-based gating windows typically associated with end-exhalation (i.e., “30–70%”) were rarely ideal. Amplitude-based gating significantly outperformed phase-based gating, with average effective ranges for amplitude-based gating 25% lower than phase-based gating ranges (as much as 73% lower). Amplitude-based gating was consistently better suited to accommodate abnormal breathing patterns. For both phase-based and amplitude-based gating, end-exhalation provided significantly better results than end-inhalation. Conclusion: Amplitude-based gating reliably outperformed phase-based gating, and end-exhalation was more suitable than end-inhalation. These results will be used to guide future dose-escalation trials. Research funding provided by Varian Medical Systems to Miften and Jones.« less

Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

NASA Astrophysics Data System (ADS)

Marmon, Jason; Rai, Satish; Wang, Kai; Zhou, Weilie; Zhang, Yong

2016-03-01

Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical challenges. A light-effect transistor (LET) offers electronic-optical hybridization at the component level, which can continue Moore’s law to quantum region without requiring a FET’s fabrication complexity, e.g. physical gate and doping, by employing optical gating and photoconductivity. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g. on/off ratios up to ~1.0x106 with a source-drain voltage of ~1.43 V, gate-power of ~260 nW, and subthreshold swing of ~0.3 nW/decade (excluding losses). Our work offers new electronic-optical integration strategies and electronic and optical computing approaches.

Effects of the Gates Park Fire on recreation choices

Treesearch

Timothy G. Love; Alan E. Watson

1992-01-01

The 1988 Gates Park Fire, along the North Fork of the Sun River in the Bob Marshall Wilderness, provided an opportunity to explore fire effects on wilderness visitor choices. Recreation visitors along the North and South Fork drainages were interviewed to assess the effects of 1988 fires on their 1989 visits. The Gates Park fire had relatively little impact on the...

XRF inductive bead fusion and PLC based control system

NASA Astrophysics Data System (ADS)

Zhu, Jin-hong; Wang, Ying-jie; Shi, Hong-xin; Chen, Qing-ling; Chen, Yu-xi

2009-03-01

In order to ensure high-quality X-ray fluorescence spectrometry (XRF) analysis, an inductive bead fusion machine was developed. The prototype consists of super-audio IGBT induction heating power supply, rotation and swing mechanisms, and programmable logic controller (PLC). The system can realize sequence control, mechanical movement control, output current and temperature control. Experimental results show that the power supply can operate at an ideal quasi-resonant state, in which the expected power output and the required temperature can be achieved for rapid heating and the uniform formation of glass beads respectively.

Contact Metallization and Packaging Technology Development for SiC Bipolar Junction Transistors, PiN Diodes, and Schottky Diodes Designed for Long-Term Operations at 350degreeC

DTIC Science & Technology

2006-05-01

switches that are used in power conditioning systems. Silicon carbide diodes are now available commercially, and transistors (JEFETs, MOSFETs, IGBTs ...in UHP Ar for 60s in a rapid thermal annealing (RTA) furnace to achieve a low contact resistance. Following the RTA step, photolithography was...with 20μm Au is shown in Figure 3-4. The brazing process was performed with an SST 3150 high vacuum furnace . The 3150 utilizes an oil-free roughing

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Ahlberg, Patrik; Hinnemo, Malkolm; Zhang, Shi-Li; Olsson, Jörgen

2018-03-01

By pretreating the substrate of a graphene field-effect transistor (G-FET), a stable unipolar transfer characteristic, instead of the typical V-shape ambipolar behavior, has been demonstrated. This behavior is achieved through functionalization of the SiO2/Si substrate that changes the SiO2 surface from hydrophilic to hydrophobic, in combination with postdeposition of an Al2O3 film by atomic layer deposition (ALD). Consequently, the back-gated G-FET is found to have increased apparent hole mobility and suppressed apparent electron mobility. Furthermore, with addition of a top-gate electrode, the G-FET is in a double-gate configuration with independent top- or back-gate control. The observed difference in mobility is shown to also be dependent on the top-gate bias, with more pronounced effect at higher electric field. Thus, the combination of top and bottom gates allows control of the G-FET's electron and hole mobilities, i.e., of the transfer behavior. Based on these observations, it is proposed that polar ligands are introduced during the ALD step and, depending on their polarization, result in an apparent increase of the effective hole mobility and an apparent suppressed effective electron mobility.

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santi, C. de; Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Meneghesso, G.

2014-08-18

With this paper we propose a test method for evaluating the dynamic performance of GaN-based transistors, namely, gate-frequency sweep measurements: the effectiveness of the method is verified by characterizing the dynamic performance of Gate Injection Transistors. We demonstrate that this method can provide an effective description of the impact of traps on the transient performance of Heterojunction Field Effect Transistors, and information on the properties (activation energy and cross section) of the related defects. Moreover, we discuss the relation between the results obtained by gate-frequency sweep measurements and those collected by conventional drain current transients and double pulse characterization.

A Single Amino Acid Residue at Transmembrane Domain 4 of the α Subunit Influences Carisoprodol Direct Gating Efficacy at GABAA Receptors.

PubMed

Kumar, Manoj; Kumar, Manish; Freund, John M; Dillon, Glenn H

2017-09-01

The muscle relaxant carisoprodol has recently been controlled at the federal level as a Schedule IV drug due to its high abuse potential and consequences of misuse, such as withdrawal syndrome, delusions, seizures, and even death. Recent work has shown that carisoprodol can directly gate and allosterically modulate the type A GABA (GABA A ) receptor. These actions are subunit-dependent; compared with other GABA A receptors, carisoprodol has nominal direct gating effects in α 3 β 2 γ 2 receptors. Here, using site-directed mutagenesis and whole-cell patch-clamp electrophysiology in transiently transfected human embryonic kidney 293 cells, we examined the role of GABA A receptor α subunit transmembrane domain 4 (TM4) amino acids in direct gating and allosteric modulatory actions of carisoprodol. Mutation of α 3 valine at position 440 to leucine (present in the equivalent position in the α 1 subunit) significantly increased the direct gating effects of carisoprodol without affecting its allosteric modulatory effects. The corresponding reverse mutation, α 1(L415V), decreased carisoprodol direct gating potency and efficacy. Analysis of a series of amino acid mutations at the 415 position demonstrated that amino acid volume correlated positively with carisoprodol efficacy, whereas polarity inversely correlated with carisoprodol efficacy. We conclude that α 1(415) of TM4 is involved in the direct gating, but not allosteric modulatory, actions of carisoprodol. In addition, the orientation of alkyl or hydroxyl groups at this position influences direct gating effects. These findings support the likelihood that the direct gating and allosteric modulatory effects of carisoprodol are mediated via distinct binding sites. Copyright © 2017 by The American Society for Pharmacology and Experimental Therapeutics.

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

NASA Astrophysics Data System (ADS)

Efthymiou, L.; Longobardi, G.; Camuso, G.; Chien, T.; Chen, M.; Udrea, F.

2017-03-01

In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs.

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

NASA Astrophysics Data System (ADS)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

NASA Astrophysics Data System (ADS)

Tauk, R.; Łusakowski, J.; Knap, W.; Tiberj, A.; Bougrioua, Z.; Azize, M.; Lorenzini, P.; Sakowicz, M.; Karpierz, K.; Fenouillet-Beranger, C.; Cassé, M.; Gallon, C.; Boeuf, F.; Skotnicki, T.

2007-11-01

Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T. It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.

Accuracy and effectiveness of self-gating signals in free-breathing three-dimensional cardiac cine magnetic resonance imaging

NASA Astrophysics Data System (ADS)

Li, Shuo; Wang, Lei; Zhu, Yan-Chun; Yang, Jie; Xie, Yao-Qin; Fu, Nan; Wang, Yi; Gao, Song

2016-12-01

Conventional multiple breath-hold two-dimensional (2D) balanced steady-state free precession (SSFP) presents many difficulties in cardiac cine magnetic resonance imaging (MRI). Recently, a self-gated free-breathing three-dimensional (3D) SSFP technique has been proposed as an alternative in many studies. However, the accuracy and effectiveness of self-gating signals have been barely studied before. Since self-gating signals are crucially important in image reconstruction, a systematic study of self-gating signals and comparison with external monitored signals are needed. Previously developed self-gated free-breathing 3D SSFP techniques are used on twenty-eight healthy volunteers. Both electrocardiographic (ECG) and respiratory bellow signals are also acquired during the scan as external signals. Self-gating signal and external signal are compared by trigger and gating window. Gating window is proposed to evaluate the accuracy and effectiveness of respiratory self-gating signal. Relative deviation of the trigger and root-mean-square-deviation of the cycle duration are calculated. A two-tailed paired t-test is used to identify the difference between self-gating and external signals. A Wilcoxon signed rank test is used to identify the difference between peak and valley self-gating triggers. The results demonstrate an excellent correlation (P = 0, R > 0.99) between self-gating and external triggers. Wilcoxon signed rank test shows that there is no significant difference between peak and valley self-gating triggers for both cardiac (H = 0, P > 0.10) and respiratory (H = 0, P > 0.44) motions. The difference between self-gating and externally monitored signals is not significant (two-tailed paired-sample t-test: H = 0, P > 0.90). The self-gating signals could demonstrate cardiac and respiratory motion accurately and effectively as ECG and respiratory bellow. The difference between the two methods is not significant and can be explained. Furthermore, few ECG trigger errors appear in some subjects while these errors are not found in self-gating signals. Project supported by the National Natural Science Foundation of China (Grant Nos. 81501463, 61471349, 81671853, 81571669, and 61671026), the National High Technology Research and Development Program of China (Grant No. 2015AA043203), the Natural Science Foundation of Beijing, China (Grant No. 7162112), Guangdong Innovative Research Team Program of China (Grant No. 2011S013), the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2014A030310360 and 2014A0202015028), the Beijing Center for Mathematics and Information Interdisciplinary Sciences, Shenzhen Fundamental Research Program, China (Grant Nos. JCYJ201500731154850923 and JCYJ20140417113430665), Shenzhen High-level Oversea Talent Program, China (Grant No. KQJSCX20160301144248), and the Nanshan Technology Research Fund, China (Grant No. KC2014JSQN0001A).

Transport Properties of Anatase-TiO2 Polycrystalline-Thin-Film Field-Effect Transistors with Electrolyte Gate Layers

NASA Astrophysics Data System (ADS)

Horita, Ryohei; Ohtani, Kyosuke; Kai, Takahiro; Murao, Yusuke; Nishida, Hiroya; Toya, Taku; Seo, Kentaro; Sakai, Mio; Okuda, Tetsuji

2013-11-01

We have fabricated anatase-TiO2 polycrystalline-thin-film field-effect transistors (FETs) with poly(vinyl alcohol) (PVA), ion-liquid (IL), and ion-gel (IG) gate layers, and have tried to improve the response to gate voltage by varying the concentration of mobile ions in these electrolyte gate layers. The increase in the concentration of mobile ions by doping NaOH into the PVA gate layer or reducing the gelator in the IG gate layer markedly increases the drain-source current and reduces the driving gate voltage, which show that the mobile ions in the PVA, IL, and IG gate layers cause the formation of electric double layers (EDLs), which act as nanogap capacitors. In these TiO2-EDL-FETs, the slow formation of EDLs and the oxidation reaction at the interface between the surface of the TiO2 film and the electrolytes cause unideal FET properties. In the optimized IL and IG TiO2-EDL-FETs, the driving gate voltage is less than 1 V and the ON/OFF ratios of the transfer characteristics are about 1×104 at RT, and the nearly metallic state is realized at the interface purely by applying a gate voltage.

SU-E-J-169: The Dosimetric and Temporal Effects of Respiratory-Gated Radiation Therapy in Lung Cancer Patients

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rouabhi, O; Gross, B; Xia, J

2015-06-15

Purpose: To evaluate the dosimetric and temporal effects of high dose rate treatment mode for respiratory-gated radiation therapy in lung cancer patients. Methods: Treatment plans from five lung cancer patients (3 nongated (Group 1), 2 gated at 80EX-80IN (Group 2)) were retrospectively evaluated. The maximum tumor motions range from 6–12 mm. Using the same planning criteria, four new treatment plans, corresponding to four gating windows (20EX–20IN, 40EX–40IN, 60EX–60IN, and 80EX–80IN), were generated for each patient. Mean tumor dose (MTD), mean lung dose (MLD), and lung V20 were used to assess the dosimetric effects. A MATLAB algorithm was developed to computemore » treatment time by considering gantry rotation time, time to position collimator leaves, dose delivery time (scaled relative to the gating window), and communication overhead. Treatment delivery time for each plan was estimated using a 500 MU/min dose rate for the original plans and a 1500 MU/min dose rate for the gated plans. Results: Differences in MTD were less than 1Gy across plans for all five patients. MLD and lung V20 were on average reduced between −16.1% to −6.0% and −20.0% to −7.2%, respectively for non-gated plans when compared with the corresponding gated plans, and between − 5.8% to −4.2% and −7.0% to −5.4%, respectively for plans originally gated at 80EX–80IN when compared with the corresponding 20EX-20IN to 60EX– 60IN gated plans. Treatment delivery times of gated plans using high dose rate were reduced on average between −19.7% (−1.9min) to −27.2% (−2.7min) for originally non-gated plans and −15.6% (−0.9min) to −20.3% (−1.2min) for originally 80EX-80IN gated plans. Conclusion: Respiratory-gated radiation therapy in lung cancer patients can reduce lung toxicity, while maintaining tumor dose. Using a gated high-dose-rate treatment, delivery time comparable to non-gated normal-dose-rate treatment can be achieved. This research is supported by Siemens Medical Solutions USA, Inc.« less

Static Noise Margin Enhancement by Flex-Pass-Gate SRAM

NASA Astrophysics Data System (ADS)

O'Uchi, Shin-Ichi; Masahara, Meishoku; Sakamoto, Kunihiro; Endo, Kazuhiko; Liu, Yungxun; Matsukawa, Takashi; Sekigawa, Toshihiro; Koike, Hanpei; Suzuki, Eiichi

A Flex-Pass-Gate SRAM, i.e. a fin-type-field-effect-transistor- (FinFET-) based SRAM, is proposed to enhance noise margin during both read and write operations. In its cell, the flip-flop is composed of usual three-terminal- (3T-) FinFETs while pass gates are composed of four-terminal- (4T-) FinFETs. The 4T-FinFETs enable to adopt a dynamic threshold-voltage control in the pass gates. During a write operation, the threshold voltage of the pass gates is lowered to enhance the writing speed and stability. During the read operation, on the other hand, the threshold voltage is raised to enhance the static noise margin. An asymmetric-oxide 4T-FinFET is helpful to manage the leakage current through the pass gate. In this paper, a design strategy of the pass gate with an asymmetric gate oxide is considered, and a TCAD-based Monte Carlo simulation reveals that the Flex-Pass-Gate SRAM based on that design strategy is expected to be effective in half-pitch 32-nm technology for low-standby-power (LSTP) applications, even taking into account the variability in the device performance.

Differential-Mode Biosensor Using Dual Extended-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Choi, Jinhyeon; Lee, Hee Ho; Ahn, Jungil; Seo, Sang-Ho; Shin, Jang-Kyoo

2012-06-01

In this paper, we present a differential-mode biosensor using dual extended-gate metal-oxide-semiconductor field-effect transistors (MOSFETs), which possesses the advantages of both the extended-gate structure and the differential-mode operation. The extended-gate MOSFET was fabricated using a 0.6 µm standard complementary metal oxide semiconductor (CMOS) process. The Au extended gate is the sensing gate on which biomolecules are immobilized, while the Pt extended gate is the dummy gate for use in the differential-mode detection circuit. The differential-mode operation offers many advantages such as insensitivity to the variation of temperature and light, as well as low noise. The outputs were measured using a semiconductor parameter analyzer in a phosphate buffered saline (PBS; pH 7.4) solution. A standard Ag/AgCl reference electrode was used to apply the gate bias. We measured the variation of output voltage with time, temperature, and light intensity. The bindings of self-assembled monolayer (SAM), streptavidin, and biotin caused a variation in the output voltage of the differential-mode detection circuit and this was confirmed by surface plasmon resonance (SPR) experiment. Biotin molecules could be detected up to a concentration of as low as 0.001 µg/ml.

Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

2016-06-01

This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band gap and gate material work function engineering improves the device performance in terms of the ON-state current and suppressed ambipolar behaviour with maintaining the low OFF-state current. With these advantages, the use of gate material work function engineering imposes restriction on the high frequency performance due to increment in the parasitic capacitances and also introduces the hot carrier effects. Hence, the gate dielectric engineering with bandgap and gate material work function engineering are used in this paper to overcome the cons of the gate material work function engineering by obtaining a superior performance in terms of the current driving capability, ambipolar conduction, HCEs, DIBL and high frequency parameters of the device for ultra-low power applications. Finally, the optimization of length for different work function is performed to get the best out of this.

Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

Treesearch

Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

2015-01-01

We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol...

Study on effective MOSFET channel length extracted from gate capacitance

NASA Astrophysics Data System (ADS)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Bias-stress characterization of solution-processed organic field-effect transistor based on highly ordered liquid crystals

NASA Astrophysics Data System (ADS)

Kunii, M.; Iino, H.; Hanna, J.

2017-06-01

Bias-stress effects in solution-processed, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) field effect transistors (FETs) are studied under negative and positive direct current bias. The bottom gate, bottom contact polycrystalline Ph-BTBT-10 FET with a hybrid gate dielectric of polystyrene and SiO2 shows high field effect mobility as well as a steep subthreshold slope when fabricated with a highly ordered smectic E liquid crystalline (SmE) film as a precursor. Negative gate bias-stress causes negative threshold voltage shift (ΔVth) for Ph-BTBT-10 FET in ambient air, but ΔVth rapidly decreases as the gate bias decreases and approaches to near zero when the gate bias goes down to 9 V in amplitude. In contrast, positive gate bias-stress causes negligible ΔVth even with a relatively high bias voltage. These results conclude that Ph-BTBT-10 FET has excellent bias-stress stability in ambient air in the range of low to moderate operating voltages.

On Application of Model Predictive Control to Power Converter with Switching

NASA Astrophysics Data System (ADS)

Zanma, Tadanao; Fukuta, Junichi; Doki, Shinji; Ishida, Muneaki; Okuma, Shigeru; Matsumoto, Takashi; Nishimori, Eiji

This paper concerns a DC-DC converter control. In DC-DC converters, there exist both continuous components such as inductance, conductance and resistance and discrete ones, IGBT and MOSFET as semiconductor switching elements. Such a system can be regarded as a hybrid dynamical system. Thus, this paper presents a dc-dc control technique based on the model predictive control. Specifically, a case in which the load of the dc-dc converter changes from active to sleep is considered. In the case, a control method which makes the output voltage follow to the reference quickly in transition, and the switching frequency be constant in steady state. In addition, in applying the model predictive control to power electronics circuits, the switching characteristic of the device and the restriction condition for protection are also considered. The effectiveness of the proposed method is illustrated by comparing a conventional method through some simulation results.

A New Type Hi-Speed BLDC Control System Base on Indirect Current Control Strategy

NASA Astrophysics Data System (ADS)

Wang, D. P.; Wang, Y. C.; Zhang, F. G.; Jin, S.

2017-05-01

High speed BLDC has the characteristic as larger air gap smaller armature inductance, traditional PWM modulation will produce a great number of high frequency current harmonics which led problem like large torque ripple and serious motor heat. In the meantime traditional PWM modulation use the diode rectifier which cause harmonic pollution in electric power net. To solve the problem above, proposes a new motor controller topology. Using the IGBT device to replace the diode on frequency converter rectifier side, apply the power factor correction technology, reduce the pollution on the grid. Using busbar current modulation on the inverter, driving bridge-arm use 3-phase 6-state open as driving Mode, realize the control on a 10000r/min,10kw BLDC. The results of Simulation on matlab show the topological structure as proposed can effectively improve the network side power factor and reduce the motor armature winding harmonic and motor torque ripple.

Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components

NASA Technical Reports Server (NTRS)

Wysocki, Phil; Vashchenko, Vladislav; Celaya, Jose; Saha, Sankalita; Goebel, Kai

2009-01-01

This article reports on preliminary results of a study conducted to examine how temporary electrical overstress seed fault conditions in discrete power electronic components that cannot be detected with reliability tests but impact longevity of the device. These defects do not result in formal parametric failures per datasheet specifications, but result in substantial change in the electrical characteristics when compared with pristine device parameters. Tests were carried out on commercially available 600V IGBT devices using transmission line pulse (TLP) and system level ESD stress. It was hypothesized that the ESD causes local damage during the ESD discharge which may greatly accelerate degradation mechanisms and thus reduce the life of the components. This hypothesis was explored in simulation studies where different types of damage were imposed to different parts of the device. Experimental results agree qualitatively with the simulation for a number of tests which will motivate more in-depth modeling of the damage.

T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

NASA Astrophysics Data System (ADS)

Gupta, Ritesh; Rathi, Servin; Kaur, Ravneet; Gupta, Mridula; Gupta, R. S.

2009-03-01

In order to achieve superior RF performance, short gate length is required for the compound semiconductor field effect transistors, but the limitation in lithography for submicrometer gate lengths leads to the formation of various metal-insulator geometries like T-gate [Sandeep R. Bahl, Jesus A. del Alamo, Physics of breakdown in InAlAs/ n +-InGaAs heterostructure field-effect transistors, IEEE Trans. Electron Devices 41 (12) (1994) 2268-2275]. These geometries are the combination of various Metal-Semiconductor (MS)/Metal-Air-Semiconductor (MAS) contacts. Moreover, field plates [S. Karmalkar, M.S. Shur, G. Simin, M. Asif Khan, Field-plate engineering for HFETs, IEEE Trans. Electron Devices 52 (2005) 2534-2540] are also being fabricated these days, mainly at the drain end ( Γ-gate) having Metal-Insulator-Semiconductor (MIS) instead of MAS contact with the intention of increasing the breakdown voltage of the device. To realize the effect of upper gate electrode in the T-gate structure and field plates, an analytical model has been proposed in the present article by dividing the whole structure into MS/MIS contact regions, applying current continuity among them and solving iteratively. The model proposed for Metal-Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) [R. Gupta, S.K. Aggarwal, M. Gupta, R.S. Gupta, Analytical model for metal insulator semiconductor high electron mobility transistor (MISHEMT) for its high frequency and high power applications, J. Semicond. Technol. Sci. 6 (3) (2006) 189-198], is equally applicable to High Electron Mobility Transistors (HEMT) and has been used to formulate this model. In this paper, various structures and geometries have been compared to anticipate the need of T-gate modeling. The effect of MIS contacts has been implemented as parasitic resistance and capacitance and has also been studied to control the middle conventional gate as in dual gate technology by applying separate voltages across it. The results obtained using the proposed analytical scheme has been compared with simulated and experimental results, to prove the validity of our model.

Nearly deterministic quantum Fredkin gate based on weak cross-Kerr nonlinearity

NASA Astrophysics Data System (ADS)

Wu, Yun-xiang; Zhu, Chang-hua; Pei, Chang-xing

2016-09-01

A scheme of an optical quantum Fredkin gate is presented based on weak cross-Kerr nonlinearity. By an auxiliary coherent state with the cross-Kerr nonlinearity effect, photons can interact with each other indirectly, and a non-demolition measurement for photons can be implemented. Combined with the homodyne detection, classical feedforward, polarization beam splitters and Pauli-X operations, a controlled-path gate is constructed. Furthermore, a quantum Fredkin gate is built based on the controlled-path gate. The proposed Fredkin gate is simple in structure and feasible by current experimental technology.

Demonstration of large field effect in topological insulator films via a high-κ back gate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, C. Y.; Lin, H. Y.; Yang, S. R.

2016-05-16

The spintronics applications long anticipated for topological insulators (TIs) has been hampered due to the presence of high density intrinsic defects in the bulk states. In this work we demonstrate the back-gating effect on TIs by integrating Bi{sub 2}Se{sub 3} films 6–10 quintuple layer (QL) thick with amorphous high-κ oxides of Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3}. Large gating effect of tuning the Fermi level E{sub F} to very close to the band gap was observed, with an applied bias of an order of magnitude smaller than those of the SiO{sub 2} back gate, and the modulation of filmmore » resistance can reach as high as 1200%. The dependence of the gating effect on the TI film thickness was investigated, and ΔN{sub 2D}/ΔV{sub g} varies with TI film thickness as ∼t{sup −0.75}. To enhance the gating effect, a Y{sub 2}O{sub 3} layer thickness 4 nm was inserted into Al{sub 2}O{sub 3} gate stack to increase the total κ value to 13.2. A 1.4 times stronger gating effect is observed, and the increment of induced carrier numbers is in good agreement with additional charges accumulated in the higher κ oxides. Moreover, we have reduced the intrinsic carrier concentration in the TI film by doping Te to Bi{sub 2}Se{sub 3} to form Bi{sub 2}Te{sub x}Se{sub 1−x}. The observation of a mixed state of ambipolar field that both electrons and holes are present indicates that we have tuned the E{sub F} very close to the Dirac Point. These results have demonstrated that our capability of gating TIs with high-κ back gate to pave the way to spin devices of tunable E{sub F} for dissipationless spintronics based on well-established semiconductor technology.« less

Extracellular Zinc Ion Inhibits ClC-0 Chloride Channels by Facilitating Slow Gating

PubMed Central

Chen, Tsung-Yu

1998-01-01

Extracellular Zn2+ was found to reversibly inhibit the ClC-0 Cl− channel. The apparent on and off rates of the inhibition were highly temperature sensitive, suggesting an effect of Zn2+ on the slow gating (or inactivation) of ClC-0. In the absence of Zn2+, the rate of the slow-gating relaxation increased with temperature, with a Q10 of ∼37. Extracellular Zn2+ facilitated the slow-gating process at all temperatures, but the Q10 did not change. Further analysis of the rate constants of the slow-gating process indicates that the effect of Zn2+ is mostly on the forward rate (the rate of inactivation) rather than the backward rate (the rate of recovery from inactivation) of the slow gating. When ClC-0 is bound with Zn2+, the equilibrium constant of the slow-gating process is increased by ∼30-fold, reflecting a 30-fold higher Zn2+ affinity in the inactivated channel than in the open-state channel. As examined through a wide range of membrane potentials, Zn2+ inhibits the opening of the slow gate with equal potency at all voltages, suggesting that a two-state model is inadequate to describe the slow-gating transition. Following a model originally proposed by Pusch and co-workers (Pusch, M., U. Ludewig, and T.J. Jentsch. 1997. J. Gen. Physiol. 109:105–116), the effect of Zn2+ on the activation curve of the slow gate can be well described by adding two constraints: (a) the dissociation constant for Zn2+ binding to the open channel is 30 μM, and (b) the difference in entropy between the open state and the transition state of the slow-gating process is increased by 27 J/ mol/°K for the Zn2+-bound channel. These results together indicate that extracellular Zn2+ inhibits ClC-0 by facilitating the slow-gating process. PMID:9834141

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Yan; Lin, Zhaojun; Cui, Peng; Zhao, Jingtao; Fu, Chen; Yang, Ming; Lv, Yuanjie

2017-08-01

Using a suitable dual-gate structure, the source-to-drain resistance (RSD) of AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with varying gate position has been studied at room temperature. The theoretical and experimental results have revealed a dependence of RSD on the gate position. The variation of RSD with the gate position is found to stem from the polarization Coulomb field (PCF) scattering. This finding is of great benefit to the optimization of the performance of AlGaN/AlN/GaN HFET. Especially, when the AlGaN/AlN/GaN HFET works as a microwave device, it is beneficial to achieve the impedance matching by designing the appropriate gate position based on PCF scattering.

Electrolyte-gated transistors based on conducting polymer nanowire junction arrays.

PubMed

Alam, Maksudul M; Wang, Jun; Guo, Yaoyao; Lee, Stephanie P; Tseng, Hsian-Rong

2005-07-07

In this study, we describe the electrolyte gating and doping effects of transistors based on conducting polymer nanowire electrode junction arrays in buffered aqueous media. Conducting polymer nanowires including polyaniline, polypyrrole, and poly(ethylenedioxythiophene) were investigated. In the presence of a positive gate bias, the device exhibits a large on/off current ratio of 978 for polyaniline nanowire-based transistors; these values vary according to the acidity of the gate medium. We attribute these efficient electrolyte gating and doping effects to the electrochemically fabricated nanostructures of conducting polymer nanowires. This study demonstrates that two-terminal devices can be easily converted into three-terminal transistors by simply immersing the device into an electrolyte solution along with a gate electrode. Here, the field-induced modulation can be applied for signal amplification to enhance the device performance.

Slowing DNA Translocation in a Nanofluidic Field-Effect Transistor.

PubMed

Liu, Yifan; Yobas, Levent

2016-04-26

Here, we present an experimental demonstration of slowing DNA translocation across a nanochannel by modulating the channel surface charge through an externally applied gate bias. The experiments were performed on a nanofluidic field-effect transistor, which is a monolithic integrated platform featuring a 50 nm-diameter in-plane alumina nanocapillary whose entire length is surrounded by a gate electrode. The field-effect transistor behavior was validated on the gating of ionic conductance and protein transport. The gating of DNA translocation was subsequently studied by measuring discrete current dips associated with single λ-DNA translocation events under a source-to-drain bias of 1 V. The translocation speeds under various gate bias conditions were extracted by fitting event histograms of the measured translocation time to the first passage time distributions obtained from a simple 1D biased diffusion model. A positive gate bias was observed to slow the translocation of single λ-DNA chains markedly; the translocation speed was reduced by an order of magnitude from 18.4 mm/s obtained under a floating gate down to 1.33 mm/s under a positive gate bias of 9 V. Therefore, a dynamic and flexible regulation of the DNA translocation speed, which is vital for single-molecule sequencing, can be achieved on this device by simply tuning the gate bias. The device is realized in a conventional semiconductor microfabrication process without the requirement of advanced lithography, and can be potentially further developed into a compact electronic single-molecule sequencer.

[Clinical study of modified Gow-Gates technique of inferior alveolar nerve block in impacted mandibular third molar extraction].

PubMed

Hu, Yi-ping; Jin, Gui-fang

2015-06-01

To introduce a minimally invasive and more effective technique of inferior alveolar nerve block. Two hundred and six patients who needed extraction of the impacted mandibular third molar were divided randomly into 2 groups: the experimental group (105 cases) with modified Gow-Gates technique (modified Gow-Gates group) and the control group (101 cases) with Halstead technique (Halstead group). The anesthetic success rates, effects and complications were recorded and analyzed with SPSS17.0 software package. The anesthetic success rate was 97.15% in modified Gow-Gates group and 89.10% in Halstead group with significant difference between the 2 groups (P=0.038<0.05); In comparing the anesthesia grade, the ration of grade A and B accounted for 90.48% in modified Gow-Gates group and 87.13% in Halstead group (P=0.446>0.05). Modified Gow-Gates group had much fewer of complications than Halstead group (P=0.014<0.05). Modified Gow-Gates technique is a minimally invasive and more effective technique for inferior alveolar nerve block anesthesia. Supported by Science and Technology Planning Project of Yueqing City (2014y027).

Structured-gate organic field-effect transistors

NASA Astrophysics Data System (ADS)

Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2012-06-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

NASA Astrophysics Data System (ADS)

Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong

2018-05-01

Gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 110 nm and 220 nm, respectively. The gate recess was formed by dry plasma etching with Cr metal as the mask. The fabricated devices with a 25-nm HfO2 gate dielectric both showed a low off-state drain current of about 1.8 × 10-10 A/mm. The effects of recess depth on the electronic characteristics of Ga2O3 MOSFETs were investigated. Upon increasing the recess depth from 110 nm to 220 nm, the saturated drain current decreased from 20.7 mA/mm to 2.6 mA/mm, while the threshold voltage moved increased to +3 V. Moreover, the breakdown voltage increased from 122 V to 190 V. This is mainly because the inverted-trapezoidal gate played the role of a gate-field plate, which suppressed the peak electric field close to the gate.

Optimizing Controlling-Value-Based Power Gating with Gate Count and Switching Activity

NASA Astrophysics Data System (ADS)

Chen, Lei; Kimura, Shinji

In this paper, a new heuristic algorithm is proposed to optimize the power domain clustering in controlling-value-based (CV-based) power gating technology. In this algorithm, both the switching activity of sleep signals (p) and the overall numbers of sleep gates (gate count, N) are considered, and the sum of the product of p and N is optimized. The algorithm effectively exerts the total power reduction obtained from the CV-based power gating. Even when the maximum depth is kept to be the same, the proposed algorithm can still achieve power reduction approximately 10% more than that of the prior algorithms. Furthermore, detailed comparison between the proposed heuristic algorithm and other possible heuristic algorithms are also presented. HSPICE simulation results show that over 26% of total power reduction can be obtained by using the new heuristic algorithm. In addition, the effect of dynamic power reduction through the CV-based power gating method and the delay overhead caused by the switching of sleep transistors are also shown in this paper.

EFFECTS OF SUBSCUTE EXPOSURE TO NANOMOLAR CONCENTRATIONS OF METHYLMERCURY ON VOLTAGE-GATES SODIUM AND CALCIUM CURRENTS IN PC12 CELLS.

EPA Science Inventory

Methylmercury (CH3Hg+) alters the function of voltage-gated Na+ and Ca2+ channels in neuronal preparations following acute, in vitro, exposure. Because the developing nervous system is particularly sensitive to CH3Hg+ neurotoxicity, effects on voltage-gated Na+ (INa) and Ca2+ (IC...

Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

NASA Astrophysics Data System (ADS)

Rafhay, Quentin; Beug, M. Florian; Duane, Russell

2007-04-01

This paper presents an experimental comparison of dummy cell extraction methods of the gate capacitance coupling coefficient for floating gate non-volatile memory structures from different geometries and technologies. These results show the significant influence of mismatching floating gate devices and reference transistors on the extraction of the gate capacitance coupling coefficient. In addition, it demonstrates the accuracy of the new bulk bias dummy cell extraction method and the importance of the β function, introduced recently in [Duane R, Beug F, Mathewson A. Novel capacitance coupling coefficient measurement methodology for floating gate non-volatile memory devices. IEEE Electr Dev Lett 2005;26(7):507-9], to determine matching pairs of floating gate memory and reference transistor.

Light-induced negative differential resistance in gate-controlled graphene-silicon photodiode

NASA Astrophysics Data System (ADS)

Liu, Wei; Guo, Hongwei; Li, Wei; Wan, Xia; Bodepudi, Srikrishna Chanakya; Shehzad, Khurram; Xu, Yang

2018-05-01

In this letter, we investigated light-induced negative differential resistance (L-NDR) effects in a hybrid photodiode formed by a graphene-silicon (GS) junction and a neighboring graphene-oxide-Si (GOS) capacitor. We observed two distinct L-NDR effects originating from the gate-dependent surface recombination and the potential-well-induced confinement of photo-carriers in the GOS region. We verified this by studying the gate-controlled GS diode, which can distinguish the photocurrent from the GS region with that from the GOS region (gate). A large peak-to-valley ratio of up to 12.1 has been obtained for the L-NDR due to gate-dependent surface recombination. Such strong L-NDR effect provides an opportunity to further engineer the optoelectronic properties of GS junctions along with exploring its potential applications in photodetectors, photo-memories, and position sensitive devices.

A Controlled-Phase Gate via Adiabatic Rydberg Dressing of Neutral Atoms

NASA Astrophysics Data System (ADS)

Keating, Tyler; Deutsch, Ivan; Cook, Robert; Biederman, Grant; Jau, Yuan-Yu

2014-05-01

The dipole blockade effect between Rydberg atoms is a promising tool for quantum information processing in neutral atoms. So far, most efforts to perform a quantum logic gate with this effect have used resonant laser pulses to excite the atoms, which makes the system particularly susceptible to decoherence through thermal motional effects. We explore an alternative scheme in which the atomic ground states are adiabatically ``dressed'' by turning on an off-resonant laser. We analyze the implementation of a CPHASE gate using this mechanism and find that fidelities of >99% should be possible with current technology, owing primarily to the suppression of motional errors. We also discuss how such a scheme could be generalized to perform more complicated, multi-qubit gates; in particular, a simple generalization would allow us to perform a Toffoli gate in a single step.

High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-03-01

In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

A universal steady state I-V relationship for membrane current

NASA Technical Reports Server (NTRS)

Chernyak, Y. B.; Cohen, R. J. (Principal Investigator)

1995-01-01

A purely electrical mechanism for the gating of membrane ionic channel gives rise to a simple I-V relationship for membrane current. Our approach is based on the known presence of gating charge, which is an established property of the membrane channel gating. The gating charge is systematically treated as a polarization of the channel protein which varies with the external electric field and modifies the effective potential through which the ions migrate in the channel. Two polarization effects have been considered: 1) the up or down shift of the whole potential function, and 2) the change in the effective electric field inside the channel which is due to familiar effect of the effective reduction of the electric field inside a dielectric body because of the presence of surface charges on its surface. Both effects are linear in the channel polarization. The ionic current is described by a steady state solution of the Nernst-Planck equation with the potential directly controlled by the gating charge system. The solution describes reasonably well the steady state and peak-current I-V relationships for different channels, and when applied adiabatically, explains the time lag between the gating charge current and the rise of the ionic current. The approach developed can be useful as an effective way to model the ionic currents in axons, cardiac cells and other excitable tissues.

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

NASA Astrophysics Data System (ADS)

Fortunato, G.; Mariucci, L.; Cuscunà, M.; Privitera, V.; La Magna, A.; Spinella, C.; Magrı, A.; Camalleri, M.; Salinas, D.; Simon, F.; Svensson, B.; Monakhov, E.

2006-12-01

An advanced gate stack structure, which incorporates a Bragg reflector, has been developed for the integration of excimer laser annealing into the power metal-oxide semiconductor (MOS) transistor fabrication process. This advanced gate structure effectively protects the gate stack from melting, thus solving the problem related to protrusion formation. By using this gate stack configuration, power MOS transistors were fabricated with improved electrical characteristics. The Bragg reflector based gate stack architecture can be applied to other device structures, such as scaled MOS transistors, thus extending the possibilities of process integration of excimer laser annealing.

Performance characteristics of a nanoscale double-gate reconfigurable array

NASA Astrophysics Data System (ADS)

Beckett, Paul

2008-12-01

The double gate transistor is a promising device applicable to deep sub-micron design due to its inherent resistance to short-channel effects and superior subthreshold performance. Using both TCAD and SPICE circuit simulation, it is shown that the characteristics of fully depleted dual-gate thin-body Schottky barrier silicon transistors will not only uncouple the conflicting requirements of high performance and low standby power in digital logic, but will also allow the development of a locally-connected reconfigurable computing mesh. The magnitude of the threshold shift effect will scale with device dimensions and will remain compatible with oxide reliability constraints. A field-programmable architecture based on the double gate transistor is described in which the operating point of the circuit is biased via one gate while the other gate is used to form the logic array, such that complex heterogeneous computing functions may be developed from this homogeneous, mesh-connected organization.

Simulation and parametric analysis of graphene p-n junctions with two rectangular top gates and a single back gate

NASA Astrophysics Data System (ADS)

Nikiforidis, Ioannis; Karafyllidis, Ioannis G.; Dimitrakis, Panagiotis

2018-02-01

Graphene p-n junctions could be the building blocks of future nanoelectronic circuits. While the conductance modulation of graphene p-n junctions formed in devices with one bottom and one top gate have received much attention, there is comparatively little work done on devices with two top gates. Here, we employ tight-bind Hamiltonians and non-equilibrium Green function method to compute in a systematic way the dependence of the conductance of graphene p-n junctions, formed in a device with two top gates, on the device parameters. We present our results in a compact and systematic way, so that the effect of each parameter is clearly shown. Our results show that the device conductance can be effectively modulated, and that graphene devices with two top gates may be used as basic elements in future carbon-based nanoelectronic circuits.

Micromachined mold-type double-gated metal field emitters

NASA Astrophysics Data System (ADS)

Lee, Yongjae; Kang, Seokho; Chun, Kukjin

1997-12-01

Electron field emitters with double gates were fabricated using micromachining technology and the effect of the electric potential of the focusing gate (or second gate) was experimentally evaluated. The molybdenum field emission tip was made by filling a cusplike mold formed when a conformal film was deposited on the hole-trench that had been patterned on stacked metals and dielectric layers. The hole-trench was patterned by electron beam lithography and reactive ion etching. Each field emitter has a 0960-1317/7/4/009/img1 diameter extraction gate (or first gate) and a 0960-1317/7/4/009/img2 diameter focusing gate (or second gate). To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP (ethylene-diamine pyrocatechol) solution successively. The I - V characteristics and anode current change due to the focusing gate potential were measured.

A Novel Implementation of Efficient Algorithms for Quantum Circuit Synthesis

NASA Astrophysics Data System (ADS)

Zeller, Luke

In this project, we design and develop a computer program to effectively approximate arbitrary quantum gates using the discrete set of Clifford Gates together with the T gate (π/8 gate). Employing recent results from Mosca et. al. and Giles and Selinger, we implement a decomposition scheme that outputs a sequence of Clifford, T, and Tt gates that approximate the input to within a specified error range ɛ. Specifically, the given gate is first rounded to an element of Z[1/2, i] with a precision determined by ɛ, and then exact synthesis is employed to produce the resulting gate. It is known that this procedure is optimal in approximating an arbitrary single qubit gate. Our program, written in Matlab and Python, can complete both approximate and exact synthesis of qubits. It can be used to assist in the experimental implementation of an arbitrary fault-tolerant single qubit gate, for which direct implementation isn't feasible.

Triggering the Electrolyte-Gated Organic Field-Effect Transistor output characteristics through gate functionalization using diazonium chemistry: Application to biodetection of 2,4-dichlorophenoxyacetic acid.

PubMed

Nguyen, T T K; Nguyen, T N; Anquetin, G; Reisberg, S; Noël, V; Mattana, G; Touzeau, J; Barbault, F; Pham, M C; Piro, B

2018-08-15

We investigated an Electrolyte-Gated Organic Field-Effect transistor based on poly(N-alkyldiketopyrrolo-pyrrole dithienylthieno[3,2-b]thiophene) as organic semiconductor whose gate electrode was functionalized by electrografting a functional diazonium salt capable to bind an antibody specific to 2,4-dichlorophenoxyacetic acid (2,4-D), an herbicide well-known to be a soil and water pollutant. Molecular docking computations were performed to design the functional diazonium salt to rationalize the antibody capture on the gate surface. Sensing of 2,4-D was performed through a displacement immunoassay. The limit of detection was estimated at around 2.5 fM. Copyright © 2018 Elsevier B.V. All rights reserved.

Implementation of quantum logic gates via Stark-tuned Förster resonance in Rydberg atoms

NASA Astrophysics Data System (ADS)

Huang, Xi-Rong; Hu, Chang-Sheng; Shen, Li-Tuo; Yang, Zhen-Biao; Wu, Huai-Zhi

2018-02-01

We present a scheme for implementation of controlled-Z and controlled-NOT gates via rapid adiabatic passage and Stark-tuned Förster resonance. By sweeping the Förster resonance once without passing through it and adiabatically tuning the angle-dependent Rydberg-Rydberg interaction of the dipolar nature, the system can be effectively described by a two-level system with the adiabatic theorem. The single adiabatic passage leads to a gate fidelity as high as 0.999 and a greatly reduced gate operation time. We investigate the scheme by considering an actual atomic level configuration with rubidium atoms, where the fidelity of the controlled-Z gate is still higher than 0.99 under the influence of the Zeeman effect.

Underwater Turbulence Detection Using Gated Wavefront Sensing Technique

PubMed Central

Bi, Ying; Xu, Xiping; Chow, Eddy Mun Tik

2018-01-01

Laser sensing has been applied in various underwater applications, ranging from underwater detection to laser underwater communications. However, there are several great challenges when profiling underwater turbulence effects. Underwater detection is greatly affected by the turbulence effect, where the acquired image suffers excessive noise, blurring, and deformation. In this paper, we propose a novel underwater turbulence detection method based on a gated wavefront sensing technique. First, we elaborate on the operating principle of gated wavefront sensing and wavefront reconstruction. We then setup an experimental system in order to validate the feasibility of our proposed method. The effect of underwater turbulence on detection is examined at different distances, and under different turbulence levels. The experimental results obtained from our gated wavefront sensing system indicate that underwater turbulence can be detected and analyzed. The proposed gated wavefront sensing system has the advantage of a simple structure and high detection efficiency for underwater environments. PMID:29518889

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Respiratory gating and multifield technique radiotherapy for esophageal cancer.

PubMed

Ohta, Atsushi; Kaidu, Motoki; Tanabe, Satoshi; Utsunomiya, Satoru; Sasamoto, Ryuta; Maruyama, Katsuya; Tanaka, Kensuke; Saito, Hirotake; Nakano, Toshimichi; Shioi, Miki; Takahashi, Haruna; Kushima, Naotaka; Abe, Eisuke; Aoyama, Hidefumi

2017-03-01

To investigate the effects of a respiratory gating and multifield technique on the dose-volume histogram (DVH) in radiotherapy for esophageal cancer. Twenty patients who underwent four-dimensional computed tomography for esophageal cancer were included. We retrospectively created the four treatment plans for each patient, with or without the respiratory gating and multifield technique: No gating-2-field, No gating-4-field, Gating-2-field, and Gating-4-field plans. We compared the DVH parameters of the lung and heart in the No gating-2-field plan with the other three plans. In the comparison of the parameters in the No gating-2-field plan, there are significant differences in the Lung V 5Gy , V 20Gy , mean dose with all three plans and the Heart V 25Gy -V 40Gy with Gating-2-field plan, V 35Gy , V 40Gy , mean dose with No Gating-4-field plan and V 30Gy -V 40Gy , and mean dose with Gating-4-field plan. The lung parameters were smaller in the Gating-2-field plan and larger in the No gating-4-field and Gating-4-field plans. The heart parameters were all larger in the No gating-2-field plan. The lung parameters were reduced by the respiratory gating technique and increased by the multifield technique. The heart parameters were reduced by both techniques. It is important to select the optimal technique according to the risk of complications.

Efficient G(sup 4)FET-Based Logic Circuits

NASA Technical Reports Server (NTRS)

Vatan, Farrokh

2008-01-01

A total of 81 optimal logic circuits based on four-gate field-effect transistors (G(sup 4)4FETs) have been designed to implement all Boolean functions of up to three variables. The purpose of this development was to lend credence to the expectation that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. A G(sup 4)FET a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G(sup 4)FET can also be regarded as a single device having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of a silicon-on-insulator substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. One such option is to design a G(sup 4)FET to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. Optimal NOT-majority-gate, G(sup 4)FET-based logic-circuit designs were obtained in a comparative study that also included formulation of functionally equivalent logic circuits based on NOR and NAND gates implemented by use of conventional transistors. In the study, the problem of finding the optimal design for each logic function and each transistor type was solved as an integer-programming optimization problem. Considering all 81 non-equivalent Boolean functions included in the study, it was found that in 63% of the cases, fewer logic gates (and, hence, fewer transistors) would be needed in the G(sup 4)FET-based implementations.

Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawanago, Takamasa, E-mail: kawanago.t.ab@m.titech.ac.jp; Oda, Shunri

In this study, we apply self-assembled-monolayer (SAM)-based gate dielectrics to the fabrication of molybdenum disulfide (MoS{sub 2}) field-effect transistors. A simple fabrication process involving the selective formation of a SAM on metal oxides in conjunction with the dry transfer of MoS{sub 2} flakes was established. A subthreshold slope (SS) of 69 mV/dec and no hysteresis were demonstrated with the ultrathin SAM-based gate dielectrics accompanied by a low gate leakage current. The small SS and no hysteresis indicate the superior interfacial properties of the MoS{sub 2}/SAM structure. Cross-sectional transmission electron microscopy revealed a sharp and abrupt interface of the MoS{sub 2}/SAM structure.more » The SAM-based gate dielectrics are found to be applicable to the fabrication of low-voltage MoS{sub 2} field-effect transistors and can also be extended to various layered semiconductor materials. This study opens up intriguing possibilities of SAM-based gate dielectrics in functional electronic devices.« less

A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumitru, L. M.; Manoli, K.; Magliulo, M.

2015-01-01

A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

Evaluation of effective dose with chest digital tomosynthesis system using Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Kim, Dohyeon; Jo, Byungdu; Lee, Youngjin; Park, Su-Jin; Lee, Dong-Hoon; Kim, Hee-Joung

2015-03-01

Chest digital tomosynthesis (CDT) system has recently been introduced and studied. This system offers the potential to be a substantial improvement over conventional chest radiography for the lung nodule detection and reduces the radiation dose with limited angles. PC-based Monte Carlo program (PCXMC) simulation toolkit (STUK, Helsinki, Finland) is widely used to evaluate radiation dose in CDT system. However, this toolkit has two significant limits. Although PCXMC is not possible to describe a model for every individual patient and does not describe the accurate X-ray beam spectrum, Geant4 Application for Tomographic Emission (GATE) simulation describes the various size of phantom for individual patient and proper X-ray spectrum. However, few studies have been conducted to evaluate effective dose in CDT system with the Monte Carlo simulation toolkit using GATE. The purpose of this study was to evaluate effective dose in virtual infant chest phantom of posterior-anterior (PA) view in CDT system using GATE simulation. We obtained the effective dose at different tube angles by applying dose actor function in GATE simulation which was commonly used to obtain the medical radiation dosimetry. The results indicated that GATE simulation was useful to estimate distribution of absorbed dose. Consequently, we obtained the acceptable distribution of effective dose at each projection. These results indicated that GATE simulation can be alternative method of calculating effective dose in CDT applications.

Nanogranular SiO2 proton gated silicon layer transistor mimicking biological synapses

NASA Astrophysics Data System (ADS)

Liu, M. J.; Huang, G. S.; Feng, P.; Guo, Q. L.; Shao, F.; Tian, Z. A.; Li, G. J.; Wan, Q.; Mei, Y. F.

2016-06-01

Silicon on insulator (SOI)-based transistors gated by nanogranular SiO2 proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

Radiation Issues and Applications of Floating Gate Memories

NASA Technical Reports Server (NTRS)

Scheick, L. Z.; Nguyen, D. N.

2000-01-01

The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

2016-01-01

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors

NASA Astrophysics Data System (ADS)

Jang, Jungkyu; Choi, Sungju; Kim, Jungmok; Park, Tae Jung; Park, Byung-Gook; Kim, Dong Myong; Choi, Sung-Jin; Lee, Seung Min; Kim, Dae Hwan; Mo, Hyun-Sun

2018-02-01

In this study, we investigate the effect of rising time (TR) of liquid gate bias (VLG) on transient responses in pH sensors based on Si nanowire ion-sensitive field-effect transistors (ISFETs). As TR becomes shorter and pH values decrease, the ISFET current takes a longer time to saturate to the pH-dependent steady-state value. By correlating VLG with the internal gate-to-source voltage of the ISFET, we found that this effect occurs when the drift/diffusion of mobile ions in analytes in response to VLG is delayed. This gives us useful insight on the design of ISFET-based point-of-care circuits and systems, particularly with respect to determining an appropriate rising time for the liquid gate bias.

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

Variations of Contact Resistance in Dual-Gated Monolayer Molybdenum Disulfide Transistors Depending on Gate Bias Selection

NASA Astrophysics Data System (ADS)

Tran, P. X.

2017-06-01

Monolayer molybdenum disulfide (MoS2) is considered an alternative two-dimensional material for high performance ultra-thin field-effect transistors. MoS2 is a triple atomic layer with a direct 1.8 eV bandgap. Bulk MoS2 has an additional indirect bandgap of 1.2 eV, which leads to high current on/off ratio around 108. Flakes of MoS2 can be obtained by mechanical exfoliation or grown by chemical vapor deposition. Intrinsic cut-off frequency of multilayer MoS2 transistor has reached 42 GHz. Chemical doping of MoS2 is challenging and results in reduction of contact resistance. This paper focuses on modeling of dual-gated monolayer MoS2 transistors with effective mobility of carriers varying from 0.6 cm2/V s to 750 cm2/V s. In agreement with experimental data, the model demonstrates that in back-gate bias devices, the contact resistance decreases almost exponentially with increasing gate bias, whereas in top-gate bias devices, the contact resistance stays invariant when varying gate bias.

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

2006-01-01

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Rapidly reconfigurable all-optical universal logic gate

DOEpatents

Goddard, Lynford L.; Bond, Tiziana C.; Kallman, Jeffrey S.

2010-09-07

A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

Dopant distributions in n-MOSFET structure observed by atom probe tomography.

PubMed

Inoue, K; Yano, F; Nishida, A; Takamizawa, H; Tsunomura, T; Nagai, Y; Hasegawa, M

2009-11-01

The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

Scan direction induced charging dynamics and the application for detection of gate to S/D shorts in logic devices

NASA Astrophysics Data System (ADS)

Lei, Ming; Tian, Qing; Wu, Kevin; Zhao, Yan

2016-03-01

Gate to source/drain (S/D) short is the most common and detrimental failure mechanism for advanced process technology development in Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) device manufacturing. Especially for sub-1Xnm nodes, MOSFET device is more vulnerable to gate-S/D shorts due to the aggressive scaling. The detection of this kind of electrical short defect is always challenging for in-line electron beam inspection (EBI), especially new shorting mechanisms on atomic scale due to new material/process flow implementation. The second challenge comes from the characterization of the shorts including identification of the exact shorting location. In this paper, we demonstrate unique scan direction induced charging dynamics (SDCD) phenomenon which stems from the transistor level response from EBI scan at post metal contact chemical-mechanical planarization (CMP) layers. We found that SDCD effect is exceptionally useful for gate-S/D short induced voltage contrast (VC) defect detection, especially for identification of shorting locations. The unique SDCD effect signatures of gate-S/D shorts can be used as fingerprint for ground true shorting defect detection. Correlation with other characterization methods on the same defective location from EBI scan shows consistent results from various shorting mechanism. A practical work flow to implement the application of SDCD effect for in-line EBI monitor of critical gate-S/D short defects is also proposed, together with examples of successful application use cases which mostly focus on static random-access memory (SRAM) array regions. Although the capability of gate-S/D short detection as well as expected device response is limited to passing transistors and pull-down transistors due to the design restriction from standard 6-cell SRAM structure, SDCD effect is proven to be very effective for gate-S/D short induced VC defect detection as well as yield learning for advanced technology development.

Influence of range-gated intensifiers on underwater imaging system SNR

NASA Astrophysics Data System (ADS)

Wang, Xia; Hu, Ling; Zhi, Qiang; Chen, Zhen-yue; Jin, Wei-qi

2013-08-01

Range-gated technology has been a hot research field in recent years due to its high effective back scattering eliminating. As a result, it can enhance the contrast between a target and its background and extent the working distance of the imaging system. The underwater imaging system is required to have the ability to image in low light level conditions, as well as the ability to eliminate the back scattering effect, which means that the receiver has to be high-speed external trigger function, high resolution, high sensitivity, low noise, higher gain dynamic range. When it comes to an intensifier, the noise characteristics directly restrict the observation effect and range of the imaging system. The background noise may decrease the image contrast and sharpness, even covering the signal making it impossible to recognize the target. So it is quite important to investigate the noise characteristics of intensifiers. SNR is an important parameter reflecting the noise features of a system. Through the use of underwater laser range-gated imaging prediction model, and according to the linear SNR system theory, the gated imaging noise performance of the present market adopted super second generation and generation Ⅲ intensifiers were theoretically analyzed. Based on the active laser underwater range-gated imaging model, the effect to the system by gated intensifiers and the relationship between the system SNR and MTF were studied. Through theoretical and simulation analysis to the image intensifier background noise and SNR, the different influence on system SNR by super second generation and generation Ⅲ ICCD was obtained. Range-gated system SNR formula was put forward, and compared the different effect influence on the system by using two kind of ICCDs was compared. According to the matlab simulation, a detailed analysis was carried out theoretically. All the work in this paper lays a theoretical foundation to further eliminating back scattering effect, improving image SNR, designing and manufacturing higher performance underwater range-gated imaging systems.

Microscopic gate-modulation imaging of charge and field distribution in polycrystalline organic transistors

NASA Astrophysics Data System (ADS)

Matsuoka, Satoshi; Tsutsumi, Jun'ya; Kamata, Toshihide; Hasegawa, Tatsuo

2018-04-01

In this work, a high-resolution microscopic gate-modulation imaging (μ-GMI) technique is successfully developed to visualize inhomogeneous charge and electric field distributions in operating organic thin-film transistors (TFTs). We conduct highly sensitive and diffraction-limit gate-modulation sensing for acquiring difference images of semiconducting channels between at gate-on and gate-off states that are biased at an alternate frequency of 15 Hz. As a result, we observe unexpectedly inhomogeneous distribution of positive and negative local gate-modulation (GM) signals at a probe photon energy of 1.85 eV in polycrystalline pentacene TFTs. Spectroscopic analyses based on a series of μ-GMI at various photon energies reveal that two distinct effects appear, simultaneously, within the polycrystalline pentacene channel layers: Negative GM signals at 1.85 eV originate from the second-derivative-like GM spectrum which is caused by the effect of charge accumulation, whereas positive GM signals originate from the first-derivative-like GM spectrum caused by the effect of leaked gate fields. Comparisons with polycrystalline morphologies indicate that grain centers are predominated by areas with high leaked gate fields due to the low charge density, whereas grain edges are predominantly high-charge-density areas with a certain spatial extension as associated with the concentrated carrier traps. Consequently, it is reasonably understood that larger grains lead to higher device mobility, but with greater inhomogeneity in charge distribution. These findings provide a clue to understand and improve device characteristics of polycrystalline TFTs.

Respiratory gating enhances imaging of pulmonary nodules and measurement of tracer uptake in FDG PET/CT.

PubMed

Werner, Matthias K; Parker, J Anthony; Kolodny, Gerald M; English, Jeffrey R; Palmer, Matthew R

2009-12-01

The aim of this study was to evaluate prospectively the effects of respiratory gating during FDG PET/CT on the determination of lesion size and the measurement of tracer uptake in patients with pulmonary nodules in a clinical setting. Eighteen patients with known pulmonary nodules (nine women, nine men; mean age, 61.4 years) underwent conventional FDG PET/CT and respiratory-gated PET acquisitions during their scheduled staging examinations. Maximum, minimum, and average standardized uptake values (SUVs) and lesion size and volume were determined with and without respiratory gating. The results were then compared using the two-tailed Student's t test and the nonparametric Wilcoxon's test to assess the effects of respiratory gating on PET acquisitions. Respiratory gating reduced the measured area of lung lesions by 15.5%, the axial dimension by 10.3%, and the volume by 44.5% (p = 0.014, p = 0.007, and p = 0.025, respectively). The lesion volumes in gated studies were closer to those assessed by standard CT (difference decreased by 126.6%, p = 0.025). Respiratory gating increased the measured maximum SUV by 22.4% and average SUV by 13.3% (p < 0.001 and p = 0.002). Our findings suggest that the use of PET respiratory gating in PET/CT results in lesion volumes closer to those assessed by CT and improved measurements of tracer uptake for lesions in the lungs.

Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations.

PubMed

Yoon, Young Jun; Eun, Hye Rim; Seo, Jae Hwa; Kang, Hee-Sung; Lee, Seong Min; Lee, Jeongmin; Cho, Seongjae; Tae, Heung-Sik; Lee, Jung-Hee; Kang, In Man

2015-10-01

We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (Cgd) because of the increase in the overlap capacitance (Cov) and inversion capacitance (Cinv). Thus, in this work, a dual-metal gate structure is additionally applied along with the drain overlap. The current performance and the total gate capacitance (Cgg) of the device with a dual-metal gate can be possibly controlled by adjusting the metal gate workfunction (φgate) and φoverlap-gate in the overlapping regions. As a result, the intrinsic delay time (τ) is greatly reduced by obtaining lower Cgg divided by the on-state current (Ion), i.e., Cgg/Ion. We have successfully demonstrated excellent LP and high-speed performance of a highly scaled TFET by adopting both drain overlap and dual-metal gate with DIBT minimization.

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

NASA Astrophysics Data System (ADS)

Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

2009-11-01

Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

Evaluation of the irising effect of a slow-gating intensified charge-coupled device on laser-induced incandescence measurements of soot

NASA Astrophysics Data System (ADS)

Shaddix, Christopher R.; Williams, Timothy C.

2009-03-01

Intensified charge-coupled devices (ICCDs) are used extensively in many scientific and engineering environments to image weak or temporally short optical events. To optimize the quantum efficiency of light collection, many of these devices are chosen to have characteristic intensifier gate times that are relatively slow, on the order of tens of nanoseconds. For many measurements associated with nanosecond laser sources, such as scattering-based diagnostics and most laser-induced fluorescence applications, the signals rise and decay sufficiently fast during and after the laser pulse that the intensifier gate may be set to close after the cessation of the signal and still effectively reject interferences associated with longer time scales. However, the relatively long time scale and complex temporal response of laser-induced incandescence (LII) of nanometer-sized particles (such as soot) offer a difficult challenge to the use of slow-gating ICCDs for quantitative measurements. In this paper, ultraviolet Rayleigh scattering imaging is used to quantify the irising effect of a slow-gating scientific ICCD camera, and an analysis is conducted of LII image data collected with this camera as a function of intensifier gate width. The results demonstrate that relatively prompt LII detection, generally desirable to minimize the influences of particle size and local gas pressure and temperature on measurements of the soot volume fraction, is strongly influenced by the irising effect of slow-gating ICCDs.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Technical Reports Server (NTRS)

Sewell, James S.; Bozada, Christopher A.

1994-01-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Astrophysics Data System (ADS)

Sewell, James S.; Bozada, Christopher A.

1994-02-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE PAGES

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred; ...

2017-01-19

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

NASA Astrophysics Data System (ADS)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Camel Gate Field Effect Transistors.

DTIC Science & Technology

1983-01-01

CAMFETs can be designed to yield relatively voltage independent transconductances, large for- * ward turn-on voltages, and large gate-drain breakdown...doping. The FATFET area is 4.6 x 10- 4 cm2. I.- . - . . - , - 36 80 * Camel Gate U_-- Eperimental 60 * -Theoretical % Schottky Gate ~--Experimental CL 4...in the design of other devices. Finally, a comparative study of the reliabil- ities of CAMFETs, JFETs, and MESFETs should be attempted. 43 VII

High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2018-04-01

We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

NASA Astrophysics Data System (ADS)

Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin

2018-04-01

In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.

Field Effect Transistors Using Atomically Thin Layers of Copper Indium Selenide (CuInSe)

NASA Astrophysics Data System (ADS)

Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel; Talapatra, Saikat

We will report fabrication of field-effect transistors (FETs) using few-layers of Copper Indium Selenide (CuInSe) flakes exfoliated from crystals grown using chemical vapor transport technique. Our transport measurements indicate n-type FET with electron mobility µ ~ 3 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. Mobility can be further increased significantly when ionic liquid 1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) is used as top gate. Similarly subthreshold swing can be further improved from 103 V/dec to 0.55 V/dec by using ionic liquid as a top gate. We also found ON/OFF ratio of ~ 102 for both top and back gate. Comparison between ionic liquid top gate and SiO2 back gate will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI Grant # W911NF-11-1-0362.

100-nm gate lithography for double-gate transistors

NASA Astrophysics Data System (ADS)

Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

2001-09-01

The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

Holonomic Quantum Control with Continuous Variable Systems.

PubMed

Albert, Victor V; Shu, Chi; Krastanov, Stefan; Shen, Chao; Liu, Ren-Bao; Yang, Zhen-Biao; Schoelkopf, Robert J; Mirrahimi, Mazyar; Devoret, Michel H; Jiang, Liang

2016-04-08

Universal computation of a quantum system consisting of superpositions of well-separated coherent states of multiple harmonic oscillators can be achieved by three families of adiabatic holonomic gates. The first gate consists of moving a coherent state around a closed path in phase space, resulting in a relative Berry phase between that state and the other states. The second gate consists of "colliding" two coherent states of the same oscillator, resulting in coherent population transfer between them. The third gate is an effective controlled-phase gate on coherent states of two different oscillators. Such gates should be realizable via reservoir engineering of systems that support tunable nonlinearities, such as trapped ions and circuit QED.

Electro-optical graphene plasmonic logic gates.

PubMed

Ooi, Kelvin J A; Chu, Hong Son; Bai, Ping; Ang, Lay Kee

2014-03-15

The versatile control of graphene's plasmonic modes via an external gate-voltage inspires us to design efficient electro-optical graphene plasmonic logic gates at the midinfrared wavelengths. We show that these devices are superior to the conventional optical logic gates because the former possess cut-off states and interferometric effects. Moreover, the designed six basic logic gates (i.e., NOR/AND, NAND/OR, XNOR/XOR) achieved not only ultracompact size lengths of less than λ/28 with respect to the operating wavelength of 10 μm, but also a minimum extinction ratio as high as 15 dB. These graphene plasmonic logic gates are potential building blocks for future nanoscale midinfrared photonic integrated circuits.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

The use of dwell time cross-correlation functions to study single-ion channel gating kinetics.

PubMed Central

Ball, F G; Kerry, C J; Ramsey, R L; Sansom, M S; Usherwood, P N

1988-01-01

The derivation of cross-correlation functions from single-channel dwell (open and closed) times is described. Simulation of single-channel data for simple gating models, alongside theoretical treatment, is used to demonstrate the relationship of cross-correlation functions to underlying gating mechanisms. It is shown that time irreversibility of gating kinetics may be revealed in cross-correlation functions. Application of cross-correlation function analysis to data derived from the locust muscle glutamate receptor-channel provides evidence for multiple gateway states and time reversibility of gating. A model for the gating of this channel is used to show the effect of omission of brief channel events on cross-correlation functions. PMID:2462924

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Interface and gate bias dependence responses of sensing organic thin-film transistors.

PubMed

Tanese, Maria Cristina; Fine, Daniel; Dodabalapur, Ananth; Torsi, Luisa

2005-11-15

The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.

Photo-electronic current transport in back-gated graphene transistor

NASA Astrophysics Data System (ADS)

Srivastava, Ashok; Chen, Xinlu; Pradhan, Aswini K.

2017-04-01

In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.

Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takano, H.; Hosogi, K.; Kato, T.

1995-05-01

A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier withmore » an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs.« less

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

NASA Astrophysics Data System (ADS)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Current-voltage characteristics influenced by the nanochannel diameter and surface charge density in a fluidic field-effect-transistor.

PubMed

Singh, Kunwar Pal; Guo, Chunlei

2017-06-21

The nanochannel diameter and surface charge density have a significant impact on current-voltage characteristics in a nanofluidic transistor. We have simulated the effect of the channel diameter and surface charge density on current-voltage characteristics of a fluidic nanochannel with positive surface charge on its walls and a gate electrode on its surface. Anion depletion/enrichment leads to a decrease/increase in ion current with gate potential. The ion current tends to increase linearly with gate potential for narrow channels at high surface charge densities and narrow channels are more effective to control the ion current at high surface charge densities. The current-voltage characteristics are highly nonlinear for wide channels at low surface charge densities and they show different regions of current change with gate potential. The ion current decreases with gate potential after attaining a peak value for wide channels at low values of surface charge densities. At low surface charge densities, the ion current can be controlled by a narrow range of gate potentials for wide channels. The current change with source drain voltage shows ohmic, limiting and overlimiting regions.

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

NASA Technical Reports Server (NTRS)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Charge movement in gating-locked HCN channels reveals weak coupling of voltage sensors and gate.

PubMed

Ryu, Sujung; Yellen, Gary

2012-11-01

HCN (hyperpolarization-activated cyclic nucleotide gated) pacemaker channels have an architecture similar to that of voltage-gated K(+) channels, but they open with the opposite voltage dependence. HCN channels use essentially the same positively charged voltage sensors and intracellular activation gates as K(+) channels, but apparently these two components are coupled differently. In this study, we examine the energetics of coupling between the voltage sensor and the pore by using cysteine mutant channels for which low concentrations of Cd(2+) ions freeze the open-closed gating machinery but still allow the sensors to move. We were able to lock mutant channels either into open or into closed states by the application of Cd(2+) and measure the effect on voltage sensor movement. Cd(2+) did not immobilize the gating charge, as expected for strict coupling, but rather it produced shifts in the voltage dependence of voltage sensor charge movement, consistent with its effect of confining transitions to either closed or open states. From the magnitude of the Cd(2+)-induced shifts, we estimate that each voltage sensor produces a roughly three- to sevenfold effect on the open-closed equilibrium, corresponding to a coupling energy of ∼1.3-2 kT per sensor. Such coupling is not only opposite in sign to the coupling in K(+) channels, but also much weaker.

Device optimization and scaling properties of a gate-on-germanium source tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Chattopadhyay, Avik; Mallik, Abhijit; Omura, Yasuhisa

2015-06-01

A gate-on-germanium source (GoGeS) tunnel field-effect transistor (TFET) shows great promise for low-power (sub-0.5 V) applications. A detailed investigation, with the help of a numerical device simulator, on the effects of variation in different structural parameters of a GoGeS TFET on its electrical performance is reported in this paper. Structural parameters such as κ-value of the gate dielectric, length and κ-value of the spacer, and doping concentrations of both the substrate and source are considered. A low-κ symmetric spacer and a high-κ gate dielectric are found to yield better device performance. The substrate doping influences only the p-i-n leakage floor. The source doping is found to significantly affect performance parameters such as OFF-state current, ON-state current and subthreshold swing, in addition to a threshold voltage shift. Results of the investigation on the gate length scaling of such devices are also reported in this paper.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

PubMed

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

PubMed Central

2012-01-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

Analyzing Single-Event Gate Ruptures In Power MOSFET's

NASA Technical Reports Server (NTRS)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Ads' click-through rates predicting based on gated recurrent unit neural networks

NASA Astrophysics Data System (ADS)

Chen, Qiaohong; Guo, Zixuan; Dong, Wen; Jin, Lingzi

2018-05-01

In order to improve the effect of online advertising and to increase the revenue of advertising, the gated recurrent unit neural networks(GRU) model is used as the ads' click through rates(CTR) predicting. Combined with the characteristics of gated unit structure and the unique of time sequence in data, using BPTT algorithm to train the model. Furthermore, by optimizing the step length algorithm of the gated unit recurrent neural networks, making the model reach optimal point better and faster in less iterative rounds. The experiment results show that the model based on the gated recurrent unit neural networks and its optimization of step length algorithm has the better effect on the ads' CTR predicting, which helps advertisers, media and audience achieve a win-win and mutually beneficial situation in Three-Side Game.

Effect of stochastic gating on channel-facilitated transport of non-interacting and strongly repelling solutes.

PubMed

Berezhkovskii, Alexander M; Bezrukov, Sergey M

2017-08-28

Ligand- or voltage-driven stochastic gating-the structural rearrangements by which the channel switches between its open and closed states-is a fundamental property of biological membrane channels. Gating underlies the channel's ability to respond to different stimuli and, therefore, to be functionally regulated by the changing environment. The accepted understanding of the gating effect on the solute flux through the channel is that the mean flux is the product of the flux through the open channel and the probability of finding the channel in the open state. Here, using a diffusion model of channel-facilitated transport, we show that this is true only when the gating is much slower than the dynamics of solute translocation through the channel. If this condition breaks, the mean flux could differ from this simple estimate by orders of magnitude.

Solution-processed nanoparticle super-float-gated organic field-effect transistor as un-cooled ultraviolet and infrared photon counter.

PubMed

Yuan, Yongbo; Dong, Qingfeng; Yang, Bin; Guo, Fawen; Zhang, Qi; Han, Ming; Huang, Jinsong

2013-01-01

High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This "super-float-gating" mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6 photons/μm(2)s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.

Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

NASA Astrophysics Data System (ADS)

Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei

2017-04-01

A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

WE-EF-303-02: BEST IN PHYSICS (JOINT IMAGING- THERAPY): A Comprehensive Simulation of Image Guided Beam Gating for Liver Tumor Treatments Using Scanned Proton Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y; Knopf, A; Weber, D

2015-06-15

Purpose: To evaluate the effectiveness of image guided beam gating for PBS liver treatments under realistic breathing conditions. Methods: We have previously proposed a Beams’ Eye View (BEV) X-ray image system as an online motion monitoring device for deriving a gating signal for PBS proton therapy. Using dedicated 4D dose calculations (4DDC), in this work we have simulated gated liver treatments using three amplitude-based gating windows (10/5/3mm) based on motion extracted from BEV imaging of fiducial markers or the diaphragm. In order to improve motion mitigation, BEV guided gating has also been combined with either volumetric (VS) or layered (LS)more » rescanning. Nine 4DCT(MRI) liver data-sets have been used for the investigation, which not only consider realistic patient geometries but also motion variations between different breathing cycles. All 4D plans have been quantified in terms of plan homogeneity in the PTV (D5-D95), the total estimated treatment time and the beam-on duty cycle. Results: Neither gating nor rescanning can fully retrieve a comparable plan homogeneity to the static case, and considerable reductions of the duty cycle (<10%) were observed as a Result motion variations when small gating windows are used. However, once combined with rescanning, dose homogeneity within 1% of the static plan could be achieved with reasonable prolongation of the treatment time for all 9 subjects. No differences were observed between the efficacy of layered or volumetric re-scanning, or of gating signals extracted from fiducial or diaphragm motions. However, layered rescanning may be preferred over volumetric rescanning when performed in combination with gating as it is generally more time-efficient and dosimetrically robust to patient and motion variations Conclusion Combining BEV beam gating with rescanning is an efficient and effective approach to treating mobile liver tumours, and is equally effective if either the diaphragm or fiducial markers are used as motion surrogates.« less

Significance of the gate voltage-dependent mobility in the electrical characterization of organic field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Jong Beom; Lee, Dong Ryeol

2018-04-01

We studied the effect of the addition of free hole- and electron-rich organic molecules to organic semiconductors (OSCs) in organic field effect transistors (OFETs) on the gate voltage-dependent mobility. The drain current versus gate voltage characteristics were quantitatively analyzed using an OFET mobility model of power law behavior based on hopping transport in an OSC. This analysis distinguished the threshold voltage shifts, depending on the materials and structures of the OFET device, and properly estimated the hopping transport of the charge carriers induced by the gate bias within the OSC from the power law exponent parameter. The addition of pentacene or C60 molecules to a one-monolayer pentacene-based OFET shifted the threshold voltages negatively or positively, respectively, due to the structural changes that occurred in the OFET device. On the other hand, the power law parameters revealed that the addition of charge carriers of the same or opposite polarity enhanced or hindered hopping transport, respectively. This study revealed the need for a quantitative analysis of the gate voltage-dependent mobility while distinguishing this effect from the threshold voltage effect in order to understand OSC hopping transport in OFETs.

H-terminated diamond field effect transistor with ferroelectric gate insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karaya, Ryota; Furuichi, Hiroki; Nakajima, Takashi

2016-06-13

An H-terminated diamond field-effect-transistor (FET) with a ferroelectric vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film was deposited on the H-terminated diamond by the spin-coating method and low-temperature annealing was performed to suppress processing damage to the H-terminated diamond surface channel layer. The fabricated FET structure showed the typical properties of depletion-type p-channel FET and showed clear saturation of the drain current with a maximum value of 50 mA/mm. The drain current versus gate voltage curves of the proposed FET showed clockwise hysteresis loops due to the ferroelectricity of the VDF-TrFE gate insulator, and the memory windowmore » width was 19 V, when the gate voltage was swept from 20 to −20 V. The maximum on/off current ratio and the linear mobility were 10{sup 8} and 398 cm{sup 2}/V s, respectively. In addition, we modulated the drain current of the fabricated FET structure via the remnant polarization of the VDF-TrFE gate and obtained an on/off current ratio of 10{sup 3} without applying a DC gate voltage.« less

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

2014-01-01

Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.

Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

NASA Astrophysics Data System (ADS)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-04-01

In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor (TFET) for DRAM applications. The n-doped boosting layer and gate2 drain-underlap structure is employed in the device to obtain an excellent 1T-DRAM performance. The n-doped layer inserted between the source and channel regions improves the sensing margin because of a high rate of increase in the band-to-band tunneling (BTBT) probability. Furthermore, because the gate2 drain-underlap structure reduces the recombination rate that occurs between the gate2 and drain regions, a device with a gate2 drain-underlap length (L G2_D-underlap) of 10 nm exhibited a longer retention performance. As a result, by applying the n-doped layer and gate2 drain-underlap structure, the proposed device exhibited not only a high sensing margin of 1.11 µA/µm but also a long retention time of greater than 100 ms at a temperature of 358 K (85 °C).

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat Duen

2005-01-01

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

NASA Astrophysics Data System (ADS)

Alivov, Yahya; Funke, Hans; Nagpal, Prashant

2015-07-01

Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

A SONOS device with a separated charge trapping layer for improvement of charge injection

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Moon, Dong-Il; Ko, Seung-Won; Kim, Chang-Hoon; Kim, Jee-Yeon; Kim, Moon-Seok; Seol, Myeong-Lok; Moon, Joon-Bae; Choi, Ji-Min; Oh, Jae-Sub; Choi, Sung-Jin; Choi, Yang-Kyu

2017-03-01

A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained and thus short-channel effects in the proposed device are effectively suppressed. Moreover, a high program/erase speed and a large shift in the threshold voltage are achieved due to the improved charge injection by the reduced effective oxide thickness. The proposed structure has potential for use in high speed flash memory.

Benzonatate inhibition of voltage-gated sodium currents.

PubMed

Evans, M Steven; Maglinger, G Benton; Fletcher, Anita M; Johnson, Stephen R

2016-02-01

Benzonatate was FDA-approved in 1958 as an antitussive. Its mechanism of action is thought to be anesthesia of vagal sensory nerve fibers that mediate cough. Vagal sensory neurons highly express the Nav1.7 subtype of voltage-gated sodium channels, and inhibition of this channel inhibits the cough reflex. Local anesthetics inhibit voltage-gated sodium channels, but there are no reports of whether benzonatate affects these channels. Our hypothesis is that benzonatate inhibits Nav1.7 voltage-gated sodium channels. We used whole cell voltage clamp recording to test the effects of benzonatate on voltage-gated sodium (Na(+)) currents in two murine cell lines, catecholamine A differentiated (CAD) cells, which express primarily Nav1.7, and N1E-115, which express primarily Nav1.3. We found that, like local anesthetics, benzonatate strongly and reversibly inhibits voltage-gated Na(+) channels. Benzonatate causes both tonic and phasic inhibition. It has greater effects on channel inactivation than on activation, and its potency is much greater at depolarized potentials, indicating inactivated-state-specific effects. Na(+) currents in CAD cells and N1E-115 cells are similarly affected, indicating that benzonatate is not Na(+) channel subtype-specific. Benzonatate is a mixture of polyethoxy esters of 4-(butylamino) benzoic acid having varying degrees of hydrophobicity. We found that Na(+) currents are inhibited most potently by a benzonatate fraction containing the 9-ethoxy component. Detectable effects of benzonatate occur at concentrations as low as 0.3 μM, which has been reported in humans. We conclude that benzonatate has local anesthetic-like effects on voltage-gated sodium channels, including Nav1.7, which is a possible mechanism for cough suppression by the drug. Copyright © 2015 Elsevier Ltd. All rights reserved.

GIDL analysis of the process variation effect in gate-all-around nanowire FET

NASA Astrophysics Data System (ADS)

Kim, Shinkeun; Seo, Youngsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Continuous-variable controlled-Z gate using an atomic ensemble

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Mingfeng; Jiang Nianquan; Jin Qingli

2011-06-15

The continuous-variable controlled-Z gate is a canonical two-mode gate for universal continuous-variable quantum computation. It is considered as one of the most fundamental continuous-variable quantum gates. Here we present a scheme for realizing continuous-variable controlled-Z gate between two optical beams using an atomic ensemble. The gate is performed by simply sending the two beams propagating in two orthogonal directions twice through a spin-squeezed atomic medium. Its fidelity can run up to one if the input atomic state is infinitely squeezed. Considering the noise effects due to atomic decoherence and light losses, we show that the observed fidelities of the schememore » are still quite high within presently available techniques.« less

Piezo-phototronic Boolean logic and computation using photon and strain dual-gated nanowire transistors.

PubMed

Yu, Ruomeng; Wu, Wenzhuo; Pan, Caofeng; Wang, Zhaona; Ding, Yong; Wang, Zhong Lin

2015-02-04

Using polarization charges created at the metal-cadmium sulfide interface under strain to gate/modulate electrical transport and optoelectronic processes of charge carriers, the piezo-phototronic effect is applied to process mechanical and optical stimuli into electronic controlling signals. The cascade nanowire networks are demonstrated for achieving logic gates, binary computations, and gated D latches to store information carried by these stimuli. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrically Erasable Programmable Integrated Circuits for Replacement of Obsolete TTL Logic

DTIC Science & Technology

1991-12-01

different discrete devices" [7]. Fowler-Nordheim Tunneling Simplified Theory. Electrons in polysilicon are usually prevented from entering SiO 2 by an...overcomes the energy barrier, the tunneling electrons will not return to the polysilicon but will be carried by the electric field, causing a current to flow...Floating Gate Transistors A floating gate transistor is an insulated-gate field effect transistor (FET) that has a gate, usually made of polysilicon , which

Lithium ion intercalation in thin crystals of hexagonal TaSe2 gated by a polymer electrolyte

NASA Astrophysics Data System (ADS)

Wu, Yueshen; Lian, Hailong; He, Jiaming; Liu, Jinyu; Wang, Shun; Xing, Hui; Mao, Zhiqiang; Liu, Ying

2018-01-01

Ionic liquid gating has been used to modify the properties of layered transition metal dichalcogenides (TMDCs), including two-dimensional (2D) crystals of TMDCs used extensively recently in the device work, which has led to observations of properties not seen in the bulk. The main effect comes from the electrostatic gating due to the strong electric field at the interface. In addition, ionic liquid gating also leads to ion intercalation when the ion size of the gate electrolyte is small compared to the interlayer spacing of TMDCs. However, the microscopic processes of ion intercalation have rarely been explored in layered TMDCs. Here, we employed a technique combining photolithography device fabrication and electrical transport measurements on the thin crystals of hexagonal TaSe2 using multiple channel devices gated by a polymer electrolyte LiClO4/Polyethylene oxide (PEO). The gate voltage and time dependent source-drain resistances of these thin crystals were used to obtain information on the intercalation process, the effect of ion intercalation, and the correlation between the ion occupation of allowed interstitial sites and the device characteristics. We found a gate voltage controlled modulation of the charge density waves and a scattering rate of charge carriers. Our work suggests that ion intercalation can be a useful tool for layered materials engineering and 2D crystal device design.

Differential relationships of impulsivity or antisocial symptoms on P50, N100, or P200 auditory sensory gating in controls and antisocial personality disorder

PubMed Central

Lijffijt, Marijn; Cox, Blake; Acas, Michelle D.; Lane, Scott D.; Moeller, F. Gerard; Swann, Alan C.

2013-01-01

Limited information is available on the relationship between antisocial personality disorder (ASPD) and early filtering, or gating, of information, even though this could contribute to the repeatedly reported impairment in ASPD of higher-order information processing. In order to investigate early filtering in ASPD, we compared electrophysiological measures of auditory sensory gating assessed by the paired-click paradigm in males with ASPD (n = 37) to healthy controls (n = 28). Stimulus encoding was measured by P50, N100, and P200 auditory evoked potentials; auditory sensory gating (ASG) was measured by a reduction in amplitude of evoked potentials following click repetition. Effects were studied of co-existing past alcohol or drug use disorders, ASPD symptom counts, and trait impulsivity. Controls and ASPD did not differ in P50, N100, or P200 amplitude or ASG. Past alcohol or drug use disorders had no effect. In controls, impulsivity related to improved P50 and P200 gating. In ASPD, P50 or N100 gating was impaired with more symptoms or increased impulsivity, respectively, suggesting impaired early filtering of irrelevant information. In controls the relationship between P50 and P200 gating and impulsivity was reversed, suggesting better gating with higher impulsivity scores. This could reflect different roles of ASG in behavioral regulation in controls versus ASPD. PMID:22464943

P50 Sensory Gating and Attentional Performance

PubMed Central

Wan, Li; Friedman, Bruce H.; Boutros, Nash N.; Crawford, Helen J.

2008-01-01

Sensory gating refers to the preattentional filtering of irrelevant sensory stimuli. This process may be impaired in schizotypy, which is a trait also associated with cigarette smoking. This association may in part stem from the positive effects of smoking on sensory gating and attention. The relationship among sensory gating, smoking, schizotypy and attention was examined in 39 undergraduates. Sensory gating was indexed by the P50 suppression paradigm, and attention was measured by the Attention Network Test (ANT) and a Stroop task. Results showed sensory gating to be positively correlated with performances on ANT and Stroop reflected in better alerting, less conflict between stimuli, faster reaction time, and greater accuracy. Smokers showed a pattern of a greater number of significant correlations between sensory gating and attention in comparison to non-smokers, although the relationship between sensory gating and attention was not affected by schizotypy. The majority of significant correlations were found in the region surrounding Cz. These findings are discussed relative to the potential modifying influence of smoking and schizotypy on sensory gating and attention. PMID:18036692

Top and Split Gating Control of the Electrical Characteristics of a Two-dimensional Electron Gas in a LaAlO3/SrTiO3 Perovskite

NASA Astrophysics Data System (ADS)

Kwak, Yongsu; Song, Jonghyun; Kim, Jihwan; Kim, Jinhee

2018-04-01

A top gate field effect transistor was fabricated using polymethyl methacrylate (PMMA) as a gate insulator on a LaAlO3 (LAO)/SrTiO3 (STO) hetero-interface. It showed n-type behavior, and a depletion mode was observed at low temperature. The electronic properties of the 2-dimensional electron gas at the LAO/STO hetero-interface were not changed by covering LAO with PMMA following the Au top gate electrode. A split gate device was also fabricated to construct depletion mode by using a narrow constriction between the LAO/STO conduction interface. The depletion mode, as well as superconducting critical current, could be controlled by applying a split gate voltage. Noticeably, the superconducting critical current tended to decrease with decreasing the split gate voltage and finally became zero. These results indicate that a weak-linked Josephson junction can be constructed and destroyed by split gating. This observation opens the possibility of gate-voltage-adjustable quantum devices.

The effects of transistor source-to-gate bridging faults in complex CMOS gates

NASA Astrophysics Data System (ADS)

Visweswaran, G. S.; Ali, Akhtar-Uz-Zaman M.; Lala, Parag K.; Hartmann, Carlos R. P.

1991-06-01

A study of the effect of gate-to-source bridging faults in the pull-up section of a complex CMOS gate is presented. The manifestation of these faults depends on the resistance value of the connection causing the bridging. It is shown that such faults manifest themselves either as stuck-at or stuck-open faults and can be detected by tests for stuck-at and stuck-open faults generated for the equivalent logic current. It is observed that for transistor channel lengths larger than 1 microns there exists a range of values of the bridging resistance for which the fault behaves as a pseudo-stuck-open fault.

Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric

NASA Astrophysics Data System (ADS)

Jeong, Yeon Taek; Dodabalapur, Ananth

2007-11-01

Pentacene-based low voltage organic field-effect transistors were realized using an anodized Ta2O5 gate dielectric. The Ta2O5 gate dielectric layer with a surface roughness of 1.3Å was obtained by anodizing an e-beam evaporated Ta film. The device exhibited values of saturation mobility, threshold voltage, and Ion/Ioff ratio of 0.45cm2/Vs, 0.56V, and 7.5×101, respectively. The gate leakage current was reduced by more than 70% with a hexamethyldisilazane (HMDS) treatment on the Ta2O5 layer. The HMDS treatment also resulted in enhanced mobility values and a larger pentacene grain size.

Radiation hardening of MOS devices by boron. [for stabilizing gate threshold potential of field effect device

NASA Technical Reports Server (NTRS)

Danchenko, V. (Inventor)

1974-01-01

A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor

NASA Astrophysics Data System (ADS)

Itoh, Takuro; Toyota, Taro; Higuchi, Hiroyuki; Matsushita, Michio M.; Suzuki, Kentaro; Sugawara, Tadashi

2017-03-01

A tetracyanoquaterthienoquinoid (TCT4Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (ISD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state.

Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

NASA Astrophysics Data System (ADS)

Zhang, Zheng; Du, Junli; Li, Bing; Zhang, Shuhao; Hong, Mengyu; Zhang, Xiaomei; Liao, Qingliang; Zhang, Yue

2017-08-01

In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.

A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance

NASA Astrophysics Data System (ADS)

Dash, S.; Mishra, G. P.

2015-09-01

A 2D analytical tunnel field-effect transistor (FET) potential model with cylindrical gate (CG-TFET) based on the solution of Laplace’s equation is proposed. The band-to-band tunneling (BTBT) current is derived by the help of lateral electric field and the shortest tunneling distance. However, the analysis is extended to obtain the subthreshold swing (SS) and transfer characteristics of the device. The dependency of drain current, SS and transconductance on gate voltage and shortest tunneling distance is discussed. Also, the effect of scaling the gate oxide thickness and the cylindrical body diameter on the electrical parameters of the device is analyzed.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

NASA Astrophysics Data System (ADS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-03-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Dependence of electrical and time stress in organic field effect transistor with low temperature forming gas treated Al2O3 gate dielectrics.

PubMed

Lee, Sunwoo; Chung, Keum Jee; Park, In-Sung; Ahn, Jinho

2009-12-01

We report the characteristics of the organic field effect transistor (OFET) after electrical and time stress. Aluminum oxide (Al2O3) was used as a gate dielectric layer. The surface of the gate oxide layer was treated with hydrogen (H2) and nitrogen (N2) mixed gas to minimize the dangling bond at the interface layer of gate oxide. According to the two stress parameters of electrical and time stress, threshold voltage shift was observed. In particular, the mobility and subthreshold swing of OFET were significantly decreased due to hole carrier localization and degradation of the channel layer between gate oxide and pentacene by electrical stress. Electrical stress is a more critical factor in the degradation of mobility than time stress caused by H2O and O2 in the air.

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

NASA Astrophysics Data System (ADS)

Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

2018-02-01

Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

Continuous-variable geometric phase and its manipulation for quantum computation in a superconducting circuit.

PubMed

Song, Chao; Zheng, Shi-Biao; Zhang, Pengfei; Xu, Kai; Zhang, Libo; Guo, Qiujiang; Liu, Wuxin; Xu, Da; Deng, Hui; Huang, Keqiang; Zheng, Dongning; Zhu, Xiaobo; Wang, H

2017-10-20

Geometric phase, associated with holonomy transformation in quantum state space, is an important quantum-mechanical effect. Besides fundamental interest, this effect has practical applications, among which geometric quantum computation is a paradigm, where quantum logic operations are realized through geometric phase manipulation that has some intrinsic noise-resilient advantages and may enable simplified implementation of multi-qubit gates compared to the dynamical approach. Here we report observation of a continuous-variable geometric phase and demonstrate a quantum gate protocol based on this phase in a superconducting circuit, where five qubits are controllably coupled to a resonator. Our geometric approach allows for one-step implementation of n-qubit controlled-phase gates, which represents a remarkable advantage compared to gate decomposition methods, where the number of required steps dramatically increases with n. Following this approach, we realize these gates with n up to 4, verifying the high efficiency of this geometric manipulation for quantum computation.

Development of paper-gate transistor toward direct detection from microbiological fluids

NASA Astrophysics Data System (ADS)

Kajisa, Taira; Sakata, Toshiya

2017-04-01

In this study, a paper-gate transistor was developed to detect glucose using an extended-gate field-effect transistor (FET). A filter paper was used as an extended gate electrode, in which Au nanoparticles (AuNPs) modified with phenylboronic acids (PBAs) were included. PBA-AuNPs play an important role as a support to not only be entrapped in cellulose fibrils but also bind to the targeted glucose in a paper. The surface properties of PBA-AuNPs were investigated to elucidate the electrical properties of the paper-gate electrode using an absorption spectrum and a zeta potential analysis. Moreover, the paper-gate electrode enabled us to detect glucose at the micromolar level on the basis of the principle of FET devices. A platform based on the paper-gate transistor is suitable for a highly sensitive system to detect glucose in trace samples such as tears, sweat, and saliva in the future.

Mølmer-Sørensen entangling gate for cavity QED systems

NASA Astrophysics Data System (ADS)

Takahashi, Hiroki; Nevado, Pedro; Keller, Matthias

2017-10-01

The Mølmer-Sørensen gate is a state-of-the-art entangling gate in ion trap quantum computing where the gate fidelity can exceed 99%. Here we propose an analogous implementation in the setting of cavity QED. The cavity photon mode acts as the bosonic degree of freedom in the gate in contrast to that played by the phonon mode in ion traps. This is made possible by utilising cavity assisted Raman transitions interconnecting the logical qubit states embedded in a four-level energy structure, making the ‘anti-Jaynes-Cummings’ term available under the rotating-wave approximation. We identify practical sources of infidelity and discuss their effects on the gate performance. Our proposal not only demonstrates an alternative entangling gate scheme but also sheds new light on the relationship between ion traps and cavity QED, in the sense that many techniques developed in the former are transferable to the latter through our framework.

Modeling and Simulating Airport Surface Operations with Gate Conflicts

NASA Technical Reports Server (NTRS)

Zelinski, Shannon; Windhorst, Robert

2017-01-01

The Surface Operations Simulator and Scheduler (SOSS) is a fast-time simulation platform used to develop and test future surface scheduling concepts such as NASA's Air Traffic Demonstration 2 of time-based surface metering at Charlotte Douglass International Airport (CLT). Challenges associated with CLT surface operations have driven much of SOSS development. Recently, SOSS functionality for modeling harsdstand operations was developed to address gate conflicts, which occur when an arrival and departure wish to occupy the same gate at the same time. Because surface metering concepts such as ATD2 have the potential to increase gates conflicts as departures are held at their gates, it is important to study the interaction between surface metering and gate conflict management. Several approaches to managing gate conflicts with and without the use of hardstands were simulated and their effects on surface operations and scheduler performance compared.

Modeling and Simulating Airport Surface Operations with Gate Conflicts

NASA Technical Reports Server (NTRS)

Zelinski, Shannon; Windhorst, Robert

2017-01-01

The Surface Operations Simulator and Scheduler (SOSS) is a fast-time simulation platform used to develop and test future surface scheduling concepts such as NASAs Air Traffic Demonstration 2 of time-based surface metering at Charlotte Douglas International Airport (CLT). Challenges associated with CLT surface operations have driven much of SOSS development. Recently, SOSS functionality for modeling hardstand operations was developed to address gate conflicts, which occur when an arrival and departure wish to occupy the same gate at the same time. Because surface metering concepts such as ATD2 have the potential to increase gates conflicts as departure are held at their gates, it is important to study the interaction between surface metering and gate conflict management. Several approaches to managing gate conflicts with and without the use of hardstands were simulated and their effects on surface operations and scheduler performance compared.

The Effectiveness of Using a Multiple Gating Approach to Discriminate among ADHD Subtypes

ERIC Educational Resources Information Center

Simonsen, Brandi M.; Bullis, Michael D.

2007-01-01

This study explored the ability of Systematically Progressive Assessment (SPA), a multiple gating approach for assessing students with attention-deficit/hyperactivity disorder (ADHD), to discriminate between subtypes of ADHD. A total of 48 students with ADHD (ages 6-11) were evaluated with three "gates" of assessment. Logistic regression analysis…

Age effects on preattentive and early attentive auditory processing of redundant stimuli: is sensory gating affected by physiological aging?

PubMed

Gmehlin, Dennis; Kreisel, Stefan H; Bachmann, Silke; Weisbrod, Matthias; Thomas, Christine

2011-10-01

The frontal hypothesis of aging predicts an age-related decline in cognitive functions requiring inhibitory or attentional regulation. In Alzheimer's disease, preattentive gating out of redundant information is impaired. Our study aimed to examine changes associated with physiological aging in both pre- and early attentive inhibition of recurrent acoustic information. Using a passive double-click paradigm, we recorded mid-latency (P30-P50) and late-latency (N100 and P200) evoked potentials in healthy young (26 ± 5 years) and healthy elderly subjects (72 ± 5 years). Physiological aging did not affect auditory gating in amplitude measures. Both age groups exhibited clear inhibition in preattentive P50 and attention-modulated (N100) components, whereas P30 was not attenuated. Irrespective of age, the magnitude of inhibition differed significantly, being most pronounced for N100 gating. Inhibition of redundant information seems to be preserved with physiological aging. Early attentive N100 gating showed the maximum effect. Further studies are warranted to evaluate sensory gating as a suitable biomarker of underlying neurodegenerative disease.

Design consideration of δ-doping channels for high-performance n + - GaAs / p + -InGaP/n-GaAs camel-gate field effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui; Chen, Jeng-Shyan; Chu, Yu-Jui

2005-01-01

The influence of δ-doping channels on the performance of n +-GaAs/p +-InGaP/n-GaAs camel-gate field effect transistors is investigated by theoretical analysis and experimental results. The depleted pn junction of the camel gate and the existence of considerable conduction band discontinuity at the InGaP/GaAs heterojunction enhance the potential barrier height and the forward gate voltage. As the concentration-thickness products of the n-GaAs layer and δ-doping layer are fixed, the higher δ-doping device exhibits a higher potential barrier height, a larger drain current, and a broader gate voltage swing, whereas the transconductance is somewhat lower. For a n +=5.5×10 12 cm -2δ-doping device, the experimental result exhibits a maximum transconductance of 240 mS/mm and a gate voltage swing of 3.5 V. Consequently, the studied devices provide a good potential for large signal and linear circuit applications.

A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2017-08-01

This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel field effect transistors (M-TFET). We have combined this novel concept into a double-gate MOSFET, which behaves as a tunneling field effect transistor by work function engineering. In the proposed structure, in addition to the main gate, we utilize another gate over the source region with zero applied voltage and a proper work function to convert the source region from N+ to P+. We check the impact obtained by varying the source gate work function and source doping on the device parameters. The simulation results of the M-TFET indicate that it is a suitable case for a switching performance. Also, we present a two-dimensional analytic potential model of the proposed structure by solving the Poisson's equation in x and y directions and by derivatives from the potential profile; thus, the electric field is achieved. To validate our present model, we use the SILVACO ATLAS device simulator. The analytical results have been compared with it.

Direct cooled power electronics substrate

DOEpatents

Wiles, Randy H [Powell, TN; Wereszczak, Andrew A [Oak Ridge, TN; Ayers, Curtis W [Kingston, TN; Lowe, Kirk T [Knoxville, TN

2010-09-14

The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.

Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors.

PubMed

Gluschke, J G; Seidl, J; Lyttleton, R W; Carrad, D J; Cochrane, J W; Lehmann, S; Samuelson, L; Micolich, A P

2018-06-27

We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 10 3 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface "self-cleaning" effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties.

Power SEMICONDUCTORS—STATE of Art and Future Trends

NASA Astrophysics Data System (ADS)

Benda, Vitezslav

2011-06-01

The importance of effective energy conversion control, including power generation from renewable and environmentally clean energy sources, increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications, both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance.

Hybrid ECG-gated versus non-gated 512-slice CT angiography of the aorta and coronary artery: image quality and effect of a motion correction algorithm.

PubMed

Lee, Ji Won; Kim, Chang Won; Lee, Geewon; Lee, Han Cheol; Kim, Sang-Pil; Choi, Bum Sung; Jeong, Yeon Joo

2018-02-01

Background Using the hybrid electrocardiogram (ECG)-gated computed tomography (CT) technique, assessment of entire aorta, coronary arteries, and aortic valve can be possible using single-bolus contrast administration within a single acquisition. Purpose To compare the image quality of hybrid ECG-gated and non-gated CT angiography of the aorta and evaluate the effect of a motion correction algorithm (MCA) on coronary artery image quality in a hybrid ECG-gated aorta CT group. Material and Methods In total, 104 patients (76 men; mean age = 65.8 years) prospectively randomized into two groups (Group 1 = hybrid ECG-gated CT; Group 2 = non-gated CT) underwent wide-detector array aorta CT. Image quality, assessed using a four-point scale, was compared between the groups. Coronary artery image quality was compared between the conventional reconstruction and motion correction reconstruction subgroups in Group 1. Results Group 1 showed significant advantages over Group 2 in aortic wall, cardiac chamber, aortic valve, coronary ostia, and main coronary arteries image quality (all P < 0.001). All Group 1 patients had diagnostic image quality of the aortic wall and left ostium. The MCA significantly improved the image quality of the three main coronary arteries ( P < 0.05). Moreover, per-vessel interpretability improved from 92.3% to 97.1% with the MCA ( P = 0.013). Conclusion Hybrid ECG-gated CT significantly improved the heart and aortic wall image quality and the MCA can further improve the image quality and interpretability of coronary arteries.

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

NASA Astrophysics Data System (ADS)

Karmakar, Supriya; Suarez, Ernesto; Jain, Faquir C.

2011-08-01

This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO x -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high- κ gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO x -Ge quantum dots.

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puczkarski, Paweł; Gehring, Pascal, E-mail: pascal.gehring@materials.ox.ac.uk; Lau, Chit S.

2015-09-28

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1 V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

Fabrication and independent control of patterned polymer gate for a few-layer WSe{sub 2} field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Sung Ju; Park, Min; Kang, Hojin

We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe{sub 2}) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structure. The WSe{sub 2} FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS{sub 2}) FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibilitymore » in transition metal dichalcogenide (TMD)-based electronics.« less

Top-gated field-effect LaAlO{sub 3}/SrTiO{sub 3} devices made by ion-irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hurand, S.; Jouan, A.; Feuillet-Palma, C.

2016-02-01

We present a method to fabricate top-gated field-effect devices in a LaAlO{sub 3}/SrTiO{sub 3} two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting T{sub c} can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for amore » strong depletion of the 2-DEG.« less

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

NASA Astrophysics Data System (ADS)

Tripathi, Shweta

2016-10-01

In the present work, a two-dimensional (2D) analytical framework of triple material symmetrical gate stack (TMGS) DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS™ device simulator to affirm and formalize the proposed device structure.

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

NASA Astrophysics Data System (ADS)

Thorpe, B.; Kalna, K.; Langbein, F. C.; Schirmer, S.

2017-12-01

Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.

Self-Organization of Ions at the Interface between Graphene and Ionic Liquid DEME-TFSI.

PubMed

Hu, Guangliang; Pandey, Gaind P; Liu, Qingfeng; Anaredy, Radhika S; Ma, Chunrui; Liu, Ming; Li, Jun; Shaw, Scott K; Wu, Judy

2017-10-11

Electrochemical effects manifest as nonlinear responses to an applied electric field in electrochemical devices, and are linked intimately to the molecular orientation of ions in the electric double layer (EDL). Herein, we probe the origin of the electrochemical effect using a double-gate graphene field effect transistor (GFET) of ionic liquid N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI) top-gate, paired with a ferroelectric Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) back-gate of compatible gating efficiency. The orientation of the interfacial molecular ions can be extracted by measuring the GFET Dirac point shift, and their dynamic response to ultraviolet-visible light and a gate electric field was quantified. We have observed that the strong electrochemical effect is due to the TFSI anions self-organizing on a treated GFET surface. Moreover, a reversible order-disorder transition of TFSI anions self-organized on the GFET surface can be triggered by illuminating the interface with ultraviolet-visible light, revealing that it is a useful method to control the surface ion configuration and the overall performance of the device.

Effect of nanocomposite gate-dielectric properties on pentacene microstructure and field-effect transistor characteristics.

PubMed

Lee, Wen-Hsi; Wang, Chun-Chieh

2010-02-01

In this study, the effect of surface energy and roughness of the nanocomposite gate dielectric on pentacene morphology and electrical properties of pentacene OTFT are reported. Nanoparticles TiO2 were added in the polyimide matrix to form a nanocomposite which has a significantly different surface characteristic from polyimide, leading to a discrepancy in the structural properties of pentacene growth. A growth mode of pentacene deposited on the nanocomposite is proposed to explain successfully the effect of surface properties of nanocomposite gate dielectric such as surface energy and roughness on the pentacene morphology and electrical properties of OTFT. To obtain the lower surface energy and smoother surface of nanocomposite gate dielectric that is responsible for the desired crystalline, microstructure of pentacene and electrical properties of device, a bottom contact OTFT-pentacene deposited on the double-layer nanocomposite gate dielectric consisting of top smoothing layer of the neat polyimide and bottom layer of (PI+ nano-TiO2 particles) nanocomposite has been successfully demonstrated to exhibit very promising performance including high current on to off ratio of about 6 x 10(5), threshold voltage of -10 V and moderately high filed mobility of 0.15 cm2V(-1)s(-1).

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

NASA Astrophysics Data System (ADS)

Heidler, Jonas; Yang, Sheng; Feng, Xinliang; Müllen, Klaus; Asadi, Kamal

2018-06-01

Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

Simulation study of short-channel effects of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro; Matsukawa, Takashi

2018-04-01

Short-channel effects of tunnel field-effect transistors (FETs) are investigated in detail using simulations of a nonlocal band-to-band tunneling model. Discussion is limited to silicon. Several simulation scenarios were considered to address different effects, such as source overlap and drain offset effects. Adopting the drain offset to suppress the drain leakage current suppressed the short channel effects. The physical mechanism underlying the short-channel behavior of the tunnel FETs (TFETs) was very different from that of metal-oxide-semiconductor FETs (MOSFETs). The minimal gate lengths that do not lose on-state current by one order are shown to be 3 nm for single-gate structures and 2 nm for double gate structures, as determined from the drain offset structure.

Detection beyond Debye's length with an electrolyte-gated organic field-effect transistor.

PubMed

Palazzo, Gerardo; De Tullio, Donato; Magliulo, Maria; Mallardi, Antonia; Intranuovo, Francesca; Mulla, Mohammad Yusuf; Favia, Pietro; Vikholm-Lundin, Inger; Torsi, Luisa

2015-02-04

Electrolyte-gated organic field-effect transistors are successfully used as biosensors to detect binding events occurring at distances from the transistor electronic channel that are much larger than the Debye length in highly concentrated solutions. The sensing mechanism is mainly capacitive and is due to the formation of Donnan's equilibria within the protein layer, leading to an extra capacitance (CDON) in series to the gating system. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics.

PubMed

Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon

2014-11-12

Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Further characterization of the effect of ethanol on voltage-gated Ca(2+) channel function in developing CA3 hippocampal pyramidal neurons.

PubMed

Morton, Russell A; Valenzuela, C Fernando

2016-02-15

Developmental ethanol exposure damages the hippocampus, a brain region involved in learning and memory. Alterations in synaptic transmission and plasticity may play a role in this effect of ethanol. We previously reported that acute and repeated exposure to ethanol during the third trimester-equivalent inhibits long-term potentiation of GABAA receptor-dependent synaptic currents in CA3 pyramidal neurons through a mechanism that depends on retrograde release of brain-derived neurotrophic factor driven by activation of voltage-gated Ca(2+) channels (Zucca and Valenzuela, 2010). We found evidence indicating that voltage-gated Ca(2+) channels are inhibited in the presence of ethanol, an effect that may play a role in its mechanism of action. Here, we further investigated the acute effect of ethanol on the function of voltage-gated Ca(2+) channels in CA3 pyramidal neurons using Ca(2+) imaging techniques. These experiments revealed that acute ethanol exposure inhibits voltage-gated Ca(2+) channels both in somatic and proximal dendritic compartments. To investigate the long-term consequences of ethanol on voltage-gated Ca(2+) channels, we used patch-clamp electrophysiological techniques to assess the function of L-type voltage-gated Ca(2+) channels during and following ten days of vapor ethanol exposure. During ethanol withdrawal periods, the function of these channels was not significantly affected by vapor chamber exposure. Taken together with our previous findings, our results suggest that 3(rd) trimester-equivalent ethanol exposure transiently inhibits L-type voltage-gated Ca(2+) channel function in CA3 pyramidal neurons and that compensatory mechanisms restore their function during ethanol withdrawal. Transient inhibition of these channels by ethanol may be, in part, responsible for the hippocampal abnormalities associated with developmental exposure to this agent. Copyright © 2015 Elsevier B.V. All rights reserved.

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

PubMed

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-15

Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2

NASA Astrophysics Data System (ADS)

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-01

Top-gated and bottom-gated transistors with multilayer MoS2 channel fully encapsulated by stacked Al2O3/HfO2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on–off current ratio of 108, high field-effect mobility of 102 cm2 V‑1 s‑1, and low subthreshold swing of 93 mV dec–1. Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10‑3–10‑2 V MV–1 cm–1 after 6 MV cm‑1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS2 channel fully encapsulated by stacked Al2O3/HfO2 is a promising way to fabricate high-performance ML MoS2 field-effect transistors for practical electron device applications.

Impact of sea level rise on tide gate function.

PubMed

Walsh, Sean; Miskewitz, Robert

2013-01-01

Sea level rise resulting from climate change and land subsidence is expected to severely impact the duration and associated damage resulting from flooding events in tidal communities. These communities must continuously invest resources for the maintenance of existing structures and installation of new flood prevention infrastructure. Tide gates are a common flood prevention structure for low-lying communities in the tidal zone. Tide gates close during incoming tides to prevent inundation from downstream water propagating inland and open during outgoing tides to drain upland areas. Higher downstream mean sea level elevations reduce the effectiveness of tide gates by impacting the hydraulics of the system. This project developed a HEC-RAS and HEC-HMS model of an existing tide gate structure and its upland drainage area in the New Jersey Meadowlands to simulate the impact of rising mean sea level elevations on the tide gate's ability to prevent upstream flooding. Model predictions indicate that sea level rise will reduce the tide gate effectiveness resulting in longer lasting and deeper flood events. The results indicate that there is a critical point in the sea level elevation for this local area, beyond which flooding scenarios become dramatically worse and would have a significantly negative impact on the standard of living and ability to do business in one of the most densely populated areas of America.

A new approach for design and investigation of junction-less tunnel FET using electrically doped mechanism

NASA Astrophysics Data System (ADS)

Nigam, Kaushal; Kondekar, Pravin; Sharma, Dheeraj; Raad, Bhagwan Ram

2016-10-01

For the first time, a distinctive approach based on electrically doped concept is used for the formation of novel double gate tunnel field effect transistor (TFET). For this, the initially heavily doped n+ substrate is converted into n+-i-n+-i (Drain-Channel-Source) by the selection of appropriate work functions of control gate (CG) and polarity gate (PG) as 4.7 eV. Further, the formation of p+ region for source is performed by applying -1.2 V at PG. Hence, the structure behave like a n+-i-n+-p+ gated TFET, whereas, the control gate is used to modulate the effective tunneling barrier width. The physical realization of delta doped n+ layer near to source region is a challenging task for improving the device performance in terms of ON current and subthreshold slope. So, the proposed work will provide a better platform for fabrication of n+-i-n+-p+ TFET with low cost and suppressed random dopant fluctuation (RDF) effects. ATLAS TCAD device simulator is used to carry out the simulation work.

Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET

NASA Astrophysics Data System (ADS)

Wadhwa, Girish; Raj, Balwinder

2018-05-01

Nanoscale devices are emerging as a platform for detecting biomolecules. Various issues were observed during the fabrication process such as random dopant fluctuation and thermal budget. To reduce these issues charge-plasma-based concept is introduced. This paper proposes the implementation of charge-plasma-based gate underlap dielectric modulated junctionless tunnel field effect transistor (DM-JLTFET) for the revelation of biomolecule immobilized in the open cavity gate channel region. In this p+ source and n+ drain regions are introduced by employing different work function over the intrinsic silicon. Also dual material gate architecture is implemented to reduce short channel effect without abandoning any other device characteristic. The sensitivity of biosensor is studied for both the neutral and charge-neutral biomolecules. The effect of device parameters such as channel thickness, cavity length and cavity thickness on drain current have been analyzed through simulations. This paper investigates the performance of charge-plasma-based gate underlap DM-JLTFET for biomolecule sensing applications while varying dielectric constant, charge density at different biasing conditions.

Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

NASA Astrophysics Data System (ADS)

Yun, Seung Jae; Lee, Yong Woo; Son, Se Wan; Byun, Chang Woo; Reddy, A. Mallikarjuna; Joo, Seung Ki

2012-08-01

A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We introduce a damascene and chemical mechanical polishing process to embed a planarized Cu gate of 500 nm thickness into a trench and Si3N4/SiO2 multilayer gate insulator, to prevent the Cu gate from diffusing into the silicon (Si) layer at 550°C, and metal-induced lateral crystallization (MILC) technology to crystallize the amorphous Si layer. A poly-Si TFT with planarized thick Cu gate exhibits a field effect mobility of 5 cm2/Vs and a threshold voltage of -9 V, and a subthreshold swing (S) of 1.4 V/dec.

Study of proton radiation effects among diamond and rectangular gate MOSFET layouts

NASA Astrophysics Data System (ADS)

Seixas, L. E., Jr.; Finco, S.; Silveira, M. A. G.; Medina, N. H.; Gimenez, S. P.

2017-01-01

This paper describes an experimental comparative study of proton ionizing radiation effects between the metal-oxide-semiconductor (MOS) Field Effect Transistors (MOSFETs) implemented with hexagonal gate shapes (diamond) and their respective counterparts designed with the classical rectangular ones, regarding the same gate areas, channel widths and geometrical ratios (W/L). The devices were manufactured by using the 350 nm bulk complementary MOS (CMOS) integrated circuits technology. The diamond MOSFET with α angles higher or equal to 90° tends to present a smaller vulnerability to the high doses ionizing radiation than those observed in the typical rectangular MOSFET counterparts.

Gate bias stress in pentacene field-effect-transistors: Charge trapping in the dielectric or semiconductor

NASA Astrophysics Data System (ADS)

Häusermann, R.; Batlogg, B.

2011-08-01

Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO2 and Cytop). We show that it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone or in the dielectric.

High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

PubMed Central

Reddy, Bobby; Dorvel, Brian R.; Go, Jonghyun; Nair, Pradeep R.; Elibol, Oguz H.; Credo, Grace M.; Daniels, Jonathan S.; Chow, Edmond K. C.; Su, Xing; Varma, Madoo; Alam, Muhammad A.

2011-01-01

Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al2O3 gate dielectrics and we compare these devices with FETs with SiO2 gate dielectrics. The use of a high-k dielectric such as Al2O3 allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al2O3 gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO2 gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems. PMID:21203849

Audio-visual biofeedback for respiratory-gated radiotherapy: Impact of audio instruction and audio-visual biofeedback on respiratory-gated radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

George, Rohini; Department of Biomedical Engineering, Virginia Commonwealth University, Richmond, VA; Chung, Theodore D.

2006-07-01

Purpose: Respiratory gating is a commercially available technology for reducing the deleterious effects of motion during imaging and treatment. The efficacy of gating is dependent on the reproducibility within and between respiratory cycles during imaging and treatment. The aim of this study was to determine whether audio-visual biofeedback can improve respiratory reproducibility by decreasing residual motion and therefore increasing the accuracy of gated radiotherapy. Methods and Materials: A total of 331 respiratory traces were collected from 24 lung cancer patients. The protocol consisted of five breathing training sessions spaced about a week apart. Within each session the patients initially breathedmore » without any instruction (free breathing), with audio instructions and with audio-visual biofeedback. Residual motion was quantified by the standard deviation of the respiratory signal within the gating window. Results: Audio-visual biofeedback significantly reduced residual motion compared with free breathing and audio instruction. Displacement-based gating has lower residual motion than phase-based gating. Little reduction in residual motion was found for duty cycles less than 30%; for duty cycles above 50% there was a sharp increase in residual motion. Conclusions: The efficiency and reproducibility of gating can be improved by: incorporating audio-visual biofeedback, using a 30-50% duty cycle, gating during exhalation, and using displacement-based gating.« less

Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels.

PubMed

Zhang, Guohui; Geng, Yanyan; Jin, Yakang; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L; Salkoff, Lawrence; Cui, Jianmin

2017-03-06

Large conductance Ca 2+ -activated K + channels (BK channels) gate open in response to both membrane voltage and intracellular Ca 2+ The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca 2+ sensor. How these voltage and Ca 2+ sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca 2+ activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca 2+ sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel's β1 and β2 subunits. © 2017 Zhang et al.

Analysis of stability improvement in ZnO thin film transistor with dual-gate structure under negative bias stress

NASA Astrophysics Data System (ADS)

Yun, Ho-Jin; Kim, Young-Su; Jeong, Kwang-Seok; Kim, Yu-Mi; Yang, Seung-dong; Lee, Hi-Deok; Lee, Ga-Won

2014-01-01

In this study, we fabricated dual-gate zinc oxide thin film transistors (ZnO TFTs) without additional processes and analyzed their stability characteristics under a negative gate bias stress (NBS) by comparison with conventional bottom-gate structures. The dual-gate device shows superior electrical parameters, such as subthreshold swing (SS) and on/off current ratio. NBS of VGS = -20 V with VDS = 0 was applied, resulting in a negative threshold voltage (Vth) shift. After applying stress for 1000 s, the Vth shift is 0.60 V in a dual-gate ZnO TFT, while the Vth shift is 2.52 V in a bottom-gate ZnO TFT. The stress immunity of the dual-gate device is caused by the change in field distribution in the ZnO channel by adding another gate as the technology computer aided design (TCAD) simulation shows. Additionally, in flicker noise analysis, a lower noise level with a different mechanism is observed in the dual-gate structure. This can be explained by the top side of the ZnO film having a larger crystal and fewer grain boundaries than the bottom side, which is revealed by the enhanced SS and XRD results. Therefore, the improved stability of the dual-gate ZnO TFT is greatly related to the E-field cancellation effect and crystal quality of the ZnO film.

Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels

PubMed Central

Zhang, Guohui; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L.; Salkoff, Lawrence

2017-01-01

Large conductance Ca2+-activated K+ channels (BK channels) gate open in response to both membrane voltage and intracellular Ca2+. The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca2+ sensor. How these voltage and Ca2+ sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca2+ activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA. http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca2+ sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel’s β1 and β2 subunits. PMID:28196879

Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vostokov, N. V., E-mail: vostokov@ipm.sci-nnov.ru; Shashkin, V. I.

2015-11-28

We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The resultsmore » given by the different models are discussed.« less

Electrical Characteristics of Organic Field Effect Transistor Formed by Gas Treatment of High-k Al2O3 at Low Temperature

NASA Astrophysics Data System (ADS)

Lee, Sunwoo; Yoon, Seungki; Park, In-Sung; Ahn, Jinho

2009-04-01

We studied the electrical characteristics of an organic field effect transistor (OFET) formed by the hydrogen (H2) and nitrogen (N2) mixed gas treatment of a gate dielectric layer. We also investigated how device mobility is related to the length and width variations of the channel. Aluminum oxide (Al2O3) was used as the gate dielectric layer. After the treatment, the mobility and subthreshold swing were observed to be significantly improved by the decreased hole carrier localization at the interfacial layer between the gate oxide and pentacene channel layers. H2 gas plays an important role in removing the defects of the gate oxide layer at temperatures below 100 °C.

ZnO-based multiple channel and multiple gate FinMOSFETs

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Huang, Hung-Lin; Tseng, Chun-Yen; Lee, Hsin-Ying

2016-02-01

In recent years, zinc oxide (ZnO)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted much attention, because ZnO-based semiconductors possess several advantages, including large exciton binding energy, nontoxicity, biocompatibility, low material cost, and wide direct bandgap. Moreover, the ZnO-based MOSFET is one of most potential devices, due to the applications in microwave power amplifiers, logic circuits, large scale integrated circuits, and logic swing. In this study, to enhance the performances of the ZnO-based MOSFETs, the ZnObased multiple channel and multiple gate structured FinMOSFETs were fabricated using the simple laser interference photolithography method and the self-aligned photolithography method. The multiple channel structure possessed the additional sidewall depletion width control ability to improve the channel controllability, because the multiple channel sidewall portions were surrounded by the gate electrode. Furthermore, the multiple gate structure had a shorter distance between source and gate and a shorter gate length between two gates to enhance the gate operating performances. Besides, the shorter distance between source and gate could enhance the electron velocity in the channel fin structure of the multiple gate structure. In this work, ninety one channels and four gates were used in the FinMOSFETs. Consequently, the drain-source saturation current (IDSS) and maximum transconductance (gm) of the ZnO-based multiple channel and multiple gate structured FinFETs operated at a drain-source voltage (VDS) of 10 V and a gate-source voltage (VGS) of 0 V were respectively improved from 11.5 mA/mm to 13.7 mA/mm and from 4.1 mS/mm to 6.9 mS/mm in comparison with that of the conventional ZnO-based single channel and single gate MOSFETs.

Direct detector for terahertz radiation

DOEpatents

Wanke, Michael C [Albuquerque, NM; Lee, Mark [Albuquerque, NM; Shaner, Eric A [Albuquerque, NM; Allen, S James [Santa Barbara, CA

2008-09-02

A direct detector for terahertz radiation comprises a grating-gated field-effect transistor with one or more quantum wells that provide a two-dimensional electron gas in the channel region. The grating gate can be a split-grating gate having at least one finger that can be individually biased. Biasing an individual finger of the split-grating gate to near pinch-off greatly increases the detector's resonant response magnitude over prior QW FET detectors while maintaining frequency selectivity. The split-grating-gated QW FET shows a tunable resonant plasmon response to FIR radiation that makes possible an electrically sweepable spectrometer-on-a-chip with no moving mechanical optical parts. Further, the narrow spectral response and signal-to-noise are adequate for use of the split-grating-gated QW FET in a passive, multispectral terahertz imaging system. The detector can be operated in a photoconductive or a photovoltaic mode. Other embodiments include uniform front and back gates to independently vary the carrier densities in the channel region, a thinned substrate to increase bolometric responsivity, and a resistive shunt to connect the fingers of the grating gate in parallel and provide a uniform gate-channel voltage along the length of the channel to increase the responsivity and improve the spectral resolution.

Coupling between electrolyte and organic semiconductor in electrolyte-gated organic field effect transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Biscarini, Fabio; Di Lauro, Michele; Berto, Marcello; Bortolotti, Carlo A.; Geerts, Yves H.; Vuillaume, Dominique

2016-11-01

Organic field effect transistors (OFET) operated in aqueous environments are emerging as ultra-sensitive biosensors and transducers of electrical and electrochemical signals from a biological environment. Their applications range from detection of biomarkers in bodily fluids to implants for bidirectional communication with the central nervous system. They can be used in diagnostics, advanced treatments and theranostics. Several OFET layouts have been demonstrated to be effective in aqueous operations, which are distinguished either by their architecture or by the respective mechanism of doping by the ions in the electrolyte solution. In this work we discuss the unification of the seemingly different architectures, such as electrolyte-gated OFET (EGOFET), organic electrochemical transistor (OECT) and dual-gate ion-sensing FET. We first demonstrate that these architectures give rise to the frequency-dependent response of a synapstor (synapse-like transistor), with enhanced or depressed modulation of the output current depending on the frequency of the time-dependent gate voltage. This behavior that was reported for OFETs with embedded metal nanoparticles shows the existence of a capacitive coupling through an equivalent network of RC elements. Upon the systematic change of ions in the electrolyte and the morphology of the charge transport layer, we show how the time scale of the synapstor is changed. We finally show how the substrate plays effectively the role of a second bottom gate, whose potential is actually fixed by the pH/composition of the electrolyte and the gate voltage applied.

3D modeling of dual-gate FinFET.

PubMed

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

3D modeling of dual-gate FinFET

NASA Astrophysics Data System (ADS)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-01

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at V g1 > V g2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

SU-C-210-03: Impact of Breathing Irregularities On Gated Treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schiuma, D; Arheit, M; Schmelzer, P

2015-06-15

Purpose: To evaluate the effect of breathing irregularities on target location in gated treatments using amplitude and phase gating. Methods: 111 breathing patterns acquired using RPM system were categorized based on period and amplitude STD as regular (STD period ≤ 0.5 s, STD amplitude ≤ 1.5 mm), medium (0.5 s < STD period ≤ 1 s, 1.5 mm < STD amplitude ≤ 3 mm) and irregular (STD period > 1 s, STD amplitude > 3 mm). One pattern representative of the average defined population was selected per category and corresponding target motion reproduced using Quasar Respiratory Motion Phantom. Phantom inmore » motion underwent 4D-CT scan with phase reconstruction. Gated window was defined at end of exhale and DRRs reconstructed in treatment planning at 40% (beam on) and 60% phase (beam off). Target location uncertainty was assessed by comparing gated kV triggered images continuously acquired at beam on/off on a True Beam 2.0 with corresponding DRRs. Results: Average target uncertainty with amplitude gating was in [0.4 – 1.9] mm range for the different scenarios with maximum STD of 1.2 mm for the irregular pattern. Average target uncertainty with phase gating was [1.1 – 2.2] mm for regular and medium patterns, while it increased to [3.6 – 9.6] mm for the irregular pattern. Live gated motion was stable with amplitude gating, while increasing with phase gating for the irregular pattern. Treatment duration range was [68 – 160] s with amplitude and [70 – 74] s with phase gating. Conclusion: Breathing irregularities were found to affect gated treatments only when using phase gating. For regular and medium patterns no significant difference was found between the two gating strategies. Amplitude gating ensured stable gated motion within the different patterns, thus reducing intra-fraction target location variability for the irregular pattern and resulting in longer treatment duration.« less

Electron-conformational transformations govern the temperature dependence of the cardiac ryanodine receptor gating

NASA Astrophysics Data System (ADS)

Moskvin, A. S.; Iaparov, B. I.; Ryvkin, A. M.; Solovyova, O. E.; Markhasin, V. S.

2015-07-01

Temperature influences many aspects of cardiac excitation-contraction coupling, in particular, hypothermia increases the open probability ( P open) of cardiac sarcoplasmic reticulum (SR) Ca2+-release channels (ryanodine-sensitive RyR channels) rising the SR Ca2+ load in mammalian myocytes. However, to the best of our knowledge, no theoretical models are available for that effect. Traditional Markov chain models do not provide a reasonable molecular mechanistic insight on the origin of the temperature effects. Here in the paper we address a simple physically clear electron-conformational model to describe the RyR gating and argue that a synergetic effect of external thermal fluctuation forces (Gaussian-Markovian noise) and internal friction via the temperature stimulation/suppression of the open-close RyR tunneling probability can be considered as a main contributor to temperature effects on the RyR gating. Results of the computer modeling allowed us to successfully reproduce all the temperature effects observed for an isolated RyR gating in vitro under reducing the temperature: increase in P open and mean open time without any significant effect on mean closed

Analog and RF performance of a multigate FinFET at nano scale

NASA Astrophysics Data System (ADS)

Kumar, Abhishek

2016-12-01

In this paper, analog and RF performance of the Fin field effect transistor (FET) at Nano scale is observed through 3D simulation. FinFET devices like rectangular gate all around (RE-GAA) FinFET, cylindrical gate all around (CY-GAA) FinFET and triple gate (TG) FinFET are observed. The figure of merit (FOMs) such as input-output characteristics, trans-conductance (gm), output-conductance (gd), intrinsic gain (gm/gd), gate capacitance (gate to source and total gate capacitance), unity gain cut-off frequency (ft), trans-conductance generation factor (TGF), gain frequency product (GFP), gain bandwidth product (GBP) and gain transconductance frequency product (GTFP) are observed. The analog performance of a FinFETs are observed by realising source follower circuit with NMOS transistor as a current source. The source follower circuit gain is observed. It has been observed that maximum capacitance is observed in case gate all around condition. Rectangular gate all around has the highest transconductance. In the source follower circuit, the gain curve (Vout/Vin) is sharper for TG-FinFET.

Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

NASA Astrophysics Data System (ADS)

Hu, Ai-Bin; Xu, Qiu-Xia

2010-05-01

Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO2 (1 < x < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V · s) and 81.0 cm2/(V · s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

NextGen Far-Term Concept Exploration for Integrated Gate-to-Gate Trajectory-Based Operations

NASA Technical Reports Server (NTRS)

Johnson, Sally C.; Barmore, Bryan E.

2016-01-01

NASA is currently conducting concept exploration studies toward the definition of a far-term, gate-to-gate concept for Trajectory-Based Operations. This paper presents a basic architectural framework for the far-term concept and discusses some observations about implementation of trajectory-based operations in the National Airspace System. Within the concept, operators and service providers collaboratively negotiate aircraft trajectories, providing agile, optimized, aircraft-specific routing to meet service provider gate-to-gate flow-management constraints and increasing capacity by smoothly and effectively combining flight-deck-based and ground-based metering, merging, and spacing in a mixed-equipage environment. The far-term TBO concept is intended to influence the direction of mid-term TBO research and to inform the definition of stable requirements and standards for TBO communications infrastructure and user equipage.

Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

NASA Astrophysics Data System (ADS)

Kim, Heesang; Oh, Byoungchan; Kim, Kyungdo; Cha, Seon-Yong; Jeong, Jae-Goan; Hong, Sung-Joo; Lee, Jong-Ho; Park, Byung-Gook; Shin, Hyungcheol

2010-09-01

We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxide-semiconductor field-effect transistors (MOSFETs).

Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering

NASA Astrophysics Data System (ADS)

Cui, Ning; Liang, Renrong; Wang, Jing; Xu, Jun

2012-06-01

Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we present a new concept of energy band profile modulation (BPM) achieved with gate structure engineering. It is believed that this approach can be used to suppress the ambipolar effect. Based on this method, a Si TFET device with a symmetrical tri-material-gate (TMG) structure is proposed. Two-dimensional numerical simulations demonstrated that the special band profile in this device can boost on-state performance, and it also suppresses the off-state current induced by the ambipolar effect. These unique advantages are maintained over a wide range of gate lengths and supply voltages. The BPM concept can serve as a guideline for improving the performance of nanoscale TFET devices.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

p53 activated by AND gate genetic circuit under radiation and hypoxia for targeted cancer gene therapy

PubMed Central

Ding, Miao; Li, Rong; He, Rong; Wang, Xingyong; Yi, Qijian; Wang, Weidong

2015-01-01

Radio-activated gene therapy has been developed as a novel therapeutic strategy against cancer; however, expression of therapeutic gene in peritumoral tissues will result in unacceptable toxicity to normal cells. To restrict gene expression in targeted tumor mass, we used hypoxia and radiation tolerance features of tumor cells to develop a synthetic AND gate genetic circuit through connecting radiation sensitivity promoter cArG6, heat shock response elements SNF1, HSF1 and HSE4 with retroviral vector plxsn. Their construction and dynamic activity process were identified through downstream enhanced green fluorescent protein and wtp53 expression in non-small cell lung cancer A549 cells and in a nude mice model. The result showed that AND gate genetic circuit could be activated by lower required radiation dose (6 Gy) and after activated, AND gate could induce significant apoptosis effects and growth inhibition of cancer cells in vitro and in vivo. The radiation- and hypoxia-activated AND gate genetic circuit, which could lead to more powerful target tumoricidal activity represented a promising strategy for both targeted and effective gene therapy of human lung adenocarcinoma and low dose activation character of the AND gate genetic circuit implied that this model could be further exploited to decrease side-effects of clinical radiation therapy. PMID:26177264

Equilibrium charge fluctuations of a charge detector and its effect on a nearby quantum dot

NASA Astrophysics Data System (ADS)

Ruiz-Tijerina, David; Vernek, Edson; Ulloa, Sergio

2014-03-01

We study the Kondo state of a spin-1/2 quantum dot (QD), in close proximity to a quantum point contact (QPC) charge detector near the conductance regime of the 0.7 anomaly. The electrostatic coupling between the QD and QPC introduces a remote gate on the QD level, which varies with the QPC gate voltage. Furthermore, models for the 0.7 anomaly [Y. Meir et al., PRL 89,196802(2002)] suggest that the QPC lodges a Kondo-screened level with charge-correlated hybridization, which may be also affected by capacitive coupling to the QD, giving rise to a competition between the two Kondo ground states. We model the QD-QPC system as two capacitively-coupled Kondo impurities, and explore the zero-bias transport of both the QD and the QPC for different local gate voltages and coupling strengths, using the numerical renormalization group and variational methods. We find that the capacitive coupling produces a remote gating effect, non-monotonic in the gate voltages, which reduces the gate voltage window for Kondo screening in either impurity, and which can also drive a quantum phase transition out of the Kondo regime. Our study is carried out for intermediate coupling strengths, and as such is highly relevant to experiments; particularly, to recent studies of decoherence effects on QDs. Supported by MWN/CIAM and NSF PIRE.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2015-08-12

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Graphene field effect transistor without an energy gap.

PubMed

Jang, Min Seok; Kim, Hyungjun; Son, Young-Woo; Atwater, Harry A; Goddard, William A

2013-05-28

Graphene is a room temperature ballistic electron conductor and also a very good thermal conductor. Thus, it has been regarded as an ideal material for postsilicon electronic applications. A major complication is that the relativistic massless electrons in pristine graphene exhibit unimpeded Klein tunneling penetration through gate potential barriers. Thus, previous efforts to realize a field effect transistor for logic applications have assumed that introduction of a band gap in graphene is a prerequisite. Unfortunately, extrinsic treatments designed to open a band gap seriously degrade device quality, yielding very low mobility and uncontrolled on/off current ratios. To solve this dilemma, we propose a gating mechanism that leads to a hundredfold enhancement in on/off transmittance ratio for normally incident electrons without any band gap engineering. Thus, our saw-shaped geometry gate potential (in place of the conventional bar-shaped geometry) leads to switching to an off state while retaining the ultrahigh electron mobility in the on state. In particular, we report that an on/off transmittance ratio of 130 is achievable for a sawtooth gate with a gate length of 80 nm. Our switching mechanism demonstrates that intrinsic graphene can be used in designing logic devices without serious alteration of the conventional field effect transistor architecture. This suggests a new variable for the optimization of the graphene-based device--geometry of the gate electrode.

Ion-selective electrolyte-gated field-effect transistors: prerequisites for proper functioning

NASA Astrophysics Data System (ADS)

Kofler, Johannes; Schmoltner, Kerstin; List-Kratochvil, Emil J. W.

2014-10-01

Electrolyte-gated organic field-effect transistors (EGOFETs) used as transducers and amplifiers in potentiometric sensors have recently attracted a significant amount of scientific interest. For that reason, the fundamental prerequisites to achieve a proper potentiometric signal amplification and transduction are examined. First, polarizable as well as non-polarizable semiconductor- and gate-electrolyte- interface combinations are investigated by normal pulse voltammetry. The results of these measurements are correlated with the corresponding transistor characteristics, clarifying the functional principle of EGOFETs and the requirements for high signal amplification. In addition to a good electrical performance, the EGOFET-transducers should also be compatible with the targeted sensing application. Accordingly, the influence of different gate materials and electrolytes on the sensing abilities, are discussed. Even though all physical requirements are met, EGOFETs typically exhibit irreversible degradation, if the gate potential exceeds a certain level. For that reason, EGOFETs have to be operated using a constant source-drain operation mode which is presented by means of an H+ (pH) sensitive ion-sensor.

Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

NASA Astrophysics Data System (ADS)

Onose, Hidekatsu; Kobayashi, Yutaka; Onuki, Jin

2017-03-01

The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm-2 yields a pn junction breakdown voltage higher than 60 V and good forward characteristics. A normally on SiC SIT was fabricated and demonstrated. A blocking voltage higher than 2.0 kV at a gate-source voltage of -50 V and on-resistance of 70 mΩ cm2 were obtained. Device simulations were performed to investigate the effect of the lateral spreading. By comparing the measured I-V curves with simulation results, the lateral spreading factor was estimated to be about 0.5. The lateral spreading detrimentally affected the electrical properties of the SIT made using implantations at energies higher than 1 MeV.

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

NASA Astrophysics Data System (ADS)

Bolshakov, Pavel; Zhao, Peng; Azcatl, Angelica; Hurley, Paul K.; Wallace, Robert M.; Young, Chadwin D.

2017-07-01

A high quality Al2O3 layer is developed to achieve high performance in top-gate MoS2 transistors. Compared with top-gate MoS2 field effect transistors on a SiO2 layer, the intrinsic mobility and subthreshold slope were greatly improved in high-k backside layer devices. A forming gas anneal is found to enhance device performance due to a reduction in the charge trap density of the backside dielectric. The major improvements in device performance are ascribed to the forming gas anneal and the high-k dielectric screening effect of the backside Al2O3 layer. Top-gate devices built upon these stacks exhibit a near-ideal subthreshold slope of ˜69 mV/dec and a high Y-Function extracted intrinsic carrier mobility (μo) of 145 cm2/V.s, indicating a positive influence on top-gate device performance even without any backside bias.

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors.

PubMed

Chaure, Nandu B; Cammidge, Andrew N; Chambrier, Isabelle; Cook, Michael J; Cain, Markys G; Murphy, Craig E; Pal, Chandana; Ray, Asim K

2011-04-01

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc 6 ) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO 2 ) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10 -2 cm 2 V -1 s -1 and 10 6 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

PubMed Central

Chaure, Nandu B; Cammidge, Andrew N; Chambrier, Isabelle; Cook, Michael J; Cain, Markys G; Murphy, Craig E; Pal, Chandana; Ray, Asim K

2011-01-01

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones. PMID:27877383

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

NASA Astrophysics Data System (ADS)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{supmore » 11} cm{sup −2}).« less

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

PubMed

Xiao, Xiang; Zhang, Letao; Shao, Yang; Zhou, Xiaoliang; He, Hongyu; Zhang, Shengdong

2017-12-13

A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al 2 O 3 is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al 2 O 3 is formed using a localized anodization technique. The anodized Al 2 O 3 passivation layer shows a superior passivation effect to that of PECVD SiO 2 . The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm 2 /V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10 8 , and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

NASA Astrophysics Data System (ADS)

Song, In-Hyouk; Forfang, William B. D.; Cole, Bryan; You, Byoung Hee

2014-10-01

The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz.

Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeond, Todd C.; Sayyah, Rana; Ho, Fat Duen

2009-01-01

Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

Comparative analysis of full-gate and short-gate dielectric modulated electrically doped Tunnel-FET based biosensors

NASA Astrophysics Data System (ADS)

Sharma, Dheeraj; Singh, Deepika; Pandey, Sunil; Yadav, Shivendra; Kondekar, P. N.

2017-11-01

In this work, we have done a comprehensive study between full-gate and short-gate dielectrically modulated (DM) electrically doped tunnel field-effect transistor (SGDM-EDTFET) based biosensors of equivalent dimensions. However, in both the structures, dielectric constant and charge density are considered as a sensing parameter for sensing the charged and non-charged biomolecules in the given solution. In SGDM-EDTFET architecture, the reduction in gate length results a significant improvement in the tunneling current due to occurrence of strong coupling between gate and channel region which ensures higher drain current sensitivity for detection of the biomolecules. Moreover, the sensitivity of dual metal SGDM-EDTFET is compared with the single metal SGDM-EDTFET to analyze the better sensing capability of both the devices for the biosensor application. Further, the effect of sensing parameter i.e., ON-current (ION), and ION/IOFF ratio is analysed for dual metal SGDM-EDTFET in comparison with dual metal SGDM-EDFET. From the comparison, it is found that dual metal SGDM-EDTFET based biosensor attains relatively better sensitivity and can be utilized as a suitable candidate for biosensing applications.

Impact of device engineering on analog/RF performances of tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

2017-06-01

The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F.

2016-05-16

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors

DTIC Science & Technology

1976-06-01

n-channel technology using a SiO, gate-oxide thickness ol ’ 200 A and a %hallow phiosphorus diffusion of 0.5 pin on a 0.7-ohm)-cmn 8-doped > Si...substrate. The thickness of the sell-aligned it polysilicon gate was kept at 3500 A. The oxide was grown in dry 0, at a temperature ot 1000C, followed...semiconductor work function difference (equal to 0 V for the polysilicon gates’ studied here). The effect of the ionizing radiation is to introduce

Motion mitigation for lung cancer patients treated with active scanning proton therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grassberger, Clemens, E-mail: Grassberger.Clemens@mgh.harvard.edu; Dowdell, Stephen; Sharp, Greg

2015-05-15

Purpose: Motion interplay can affect the tumor dose in scanned proton beam therapy. This study assesses the ability of rescanning and gating to mitigate interplay effects during lung treatments. Methods: The treatments of five lung cancer patients [48 Gy(RBE)/4fx] with varying tumor size (21.1–82.3 cm{sup 3}) and motion amplitude (2.9–30.6 mm) were simulated employing 4D Monte Carlo. The authors investigated two spot sizes (σ ∼ 12 and ∼3 mm), three rescanning techniques (layered, volumetric, breath-sampled volumetric) and respiratory gating with a 30% duty cycle. Results: For 4/5 patients, layered rescanning 6/2 times (for the small/large spot size) maintains equivalent uniformmore » dose within the target >98% for a single fraction. Breath sampling the timing of rescanning is ∼2 times more effective than the same number of continuous rescans. Volumetric rescanning is sensitive to synchronization effects, which was observed in 3/5 patients, though not for layered rescanning. For the large spot size, rescanning compared favorably with gating in terms of time requirements, i.e., 2x-rescanning is on average a factor ∼2.6 faster than gating for this scenario. For the small spot size however, 6x-rescanning takes on average 65% longer compared to gating. Rescanning has no effect on normal lung V{sub 20} and mean lung dose (MLD), though it reduces the maximum lung dose by on average 6.9 ± 2.4/16.7 ± 12.2 Gy(RBE) for the large and small spot sizes, respectively. Gating leads to a similar reduction in maximum dose and additionally reduces V{sub 20} and MLD. Breath-sampled rescanning is most successful in reducing the maximum dose to the normal lung. Conclusions: Both rescanning (2–6 times, depending on the beam size) as well as gating was able to mitigate interplay effects in the target for 4/5 patients studied. Layered rescanning is superior to volumetric rescanning, as the latter suffers from synchronization effects in 3/5 patients studied. Gating minimizes the irradiated volume of normal lung more efficiently, while breath-sampled rescanning is superior in reducing maximum doses to organs at risk.« less

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

2007-12-01

Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

2016-02-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, X; Cao, D; Housley, D

2014-06-01

Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-movingmore » platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.« less

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).

PubMed

Choi, Woo Young; Lee, Hyun Kook

2016-01-01

The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

Single-channel kinetics of BK (Slo1) channels

PubMed Central

Geng, Yanyan; Magleby, Karl L.

2014-01-01

Single-channel kinetics has proven a powerful tool to reveal information about the gating mechanisms that control the opening and closing of ion channels. This introductory review focuses on the gating of large conductance Ca2+- and voltage-activated K+ (BK or Slo1) channels at the single-channel level. It starts with single-channel current records and progresses to presentation and analysis of single-channel data and the development of gating mechanisms in terms of discrete state Markov (DSM) models. The DSM models are formulated in terms of the tetrameric modular structure of BK channels, consisting of a central transmembrane pore-gate domain (PGD) attached to four surrounding transmembrane voltage sensing domains (VSD) and a large intracellular cytosolic domain (CTD), also referred to as the gating ring. The modular structure and data analysis shows that the Ca2+ and voltage dependent gating considered separately can each be approximated by 10-state two-tiered models with five closed states on the upper tier and five open states on the lower tier. The modular structure and joint Ca2+ and voltage dependent gating are consistent with a 50 state two-tiered model with 25 closed states on the upper tier and 25 open states on the lower tier. Adding an additional tier of brief closed (flicker states) to the 10-state or 50-state models improved the description of the gating. For fixed experimental conditions a channel would gate in only a subset of the potential number of states. The detected number of states and the correlations between adjacent interval durations are consistent with the tiered models. The examined models can account for the single-channel kinetics and the bursting behavior of gating. Ca2+ and voltage activate BK channels by predominantly increasing the effective opening rate of the channel with a smaller decrease in the effective closing rate. Ca2+ and depolarization thus activate by mainly destabilizing the closed states. PMID:25653620

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

2017-11-01

Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

Queue theory for triangular and weibull arrival distribution models (case study of Banyumanik toll)

NASA Astrophysics Data System (ADS)

Sugito; Rahmawati, Rita; Kusuma Wardhani, Jenesia

2018-05-01

Queuing is one of the most common phenomena in daily life. Queued also happens on highway during busy time. The Electronic Toll Collection (ETC) was the new system of the Banyumanik toll gate which operates in 2014. Before ETC, Banyumanik toll gate users got regular service (regular toll gate) by paying in cash only. The ETC benefits more than regular service, but automatic toll gate (ETC) users are still few compared to regular toll gate users. To know the effectiveness of substance service, this paper used analysis of queuing system. The research was conducted at Toll Gate Banyumanik with the implementation time on 26-28 December 2016 for Ungaran-Semarang direction, and 29-31 December 2016 for Semarang- Ungaran direction. In one day, observation was done for 11 hours. That was at 07.00 a.m. until 06.00 p.m. There are 4 models of queues at Banyumanik toll gate. Here the four models will be used on the number of arrival and service time. Based on the simulation with Arena, the result showed that queue model regular toll gate in Ugaran-Semarang direction is (Tria/G/3):(GD/∞/∞) and the queue model for automatic toll gate is (G/G/3):(GD/∞/∞). While the queue model for the direction of Semarang-Ungaran regular toll gate is (G/G/3):(GD/∞/∞) and the queue model of automatic toll gate is (Weib/G/3):(GD/∞/∞).

Design Architecture of field-effect transistor with back gate electrode for biosensor application

NASA Astrophysics Data System (ADS)

Fathil, M. F. M.; Arshad, M. K. Md.; Hashim, U.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Adzhri, R.; Zaki, M.; Azman, A. H.

2016-07-01

This paper presents the preparation method of photolithography chrome mask design used in fabrication process of field-effect transistor with back gate biasing based biosensor. Initially, the chrome masks are designed by studying the process flow of the biosensor fabrication, followed by drawing of the actual chrome mask using the AutoCAD software. The overall width and length of the device is optimized at 16 mm and 16 mm, respectively. Fabrication processes of the biosensor required five chrome masks, which included source and drain formation mask, the back gate area formation mask, electrode formation mask, front gate area formation mask, and passivation area formation mask. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

PubMed

Dimitrakopoulos; Purushothaman; Kymissis; Callegari; Shaw

1999-02-05

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

Optimal control of universal quantum gates in a double quantum dot

NASA Astrophysics Data System (ADS)

Castelano, Leonardo K.; de Lima, Emanuel F.; Madureira, Justino R.; Degani, Marcos H.; Maialle, Marcelo Z.

2018-06-01

We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD) formed in a nanowire with longitudinal potential modulated by local gating. We develop a model that describes the process of loading and unloading the DQD taking into account the overlap between the electron wave function and the leads. Such a model considers the spatial occupation and the spin Pauli blockade in a time-dependent fashion due to the highly mixed states driven by the external electric field. Moreover, we present a road map based on the quantum optimal control theory (QOCT) to find a specific electric field that performs two-qubit quantum gates on a faster timescale and with higher possible fidelity. By employing the QOCT, we demonstrate the possibility of performing within high efficiency a universal set of quantum gates {cnot, H, and T } , where cnot is the controlled-not gate, H is the Hadamard gate, and T is the π /8 gate, even in the presence of the loading/unloading process and charge noise effects. Furthermore, by varying the intensity of the applied magnetic field B , the optimized fidelity of the gates oscillates with a period inversely proportional to the gate operation time tf. This behavior can be useful to attain higher fidelity for fast gate operations (>1 GHz) by appropriately choosing B and tf to produce a maximum of the oscillation.

Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors.

PubMed

Li, Hua-Min; Lee, Dae-Yeong; Choi, Min Sup; Qu, Deshun; Liu, Xiaochi; Ra, Chang-Ho; Yoo, Won Jong

2014-02-10

A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited charge carriers and (ii) at the certain gate voltage due to the optimized barriers for the collection of photo-excited charge carriers at metal contacts. The effective barrier height between Ti/Au and TMDCs was estimated by a low temperature measurement. An ohmic contact behavior and drain-induced barrier lowering (DIBL) were clearly observed in MoS2 FET. In contrast, a Schottky-to-ohmic contact transition was observed in WSe2 FET as the gate voltage increases, due to the change of majority carrier transport from holes to electrons. The gate-dependent barrier modulation effectively controls the carrier transport, demonstrating its great potential in 2D TMDCs for electronic and optoelectronic applications.

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Hashizume, Tamotsu

2012-04-01

For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be ˜1.3 × 1012 cm-2. The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al2O3 passivation.

State memory in solution gated epitaxial graphene

NASA Astrophysics Data System (ADS)

Butko, A. V.; Butko, V. Y.; Lebedev, S. P.; Lebedev, A. A.; Davydov, V. Y.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Kumzerov, Y. A.

2018-06-01

We studied electrical transport in transistors fabricated on a surface of high quality epitaxial graphene with density of defects as low as 5·1010 cm-2 and observed quasistatic hysteresis with a time constant in a scale of hours. This constant is in a few orders of magnitude greater than the constant previously reported in CVD graphene. The hysteresis observed here can be described as a shift of ∼+2V of the Dirac point measured during a gate voltage increase from the position of the Dirac point measured during a gate voltage decrease. This hysteresis can be characterized as a nonvolatile quasistatic state memory effect in which the state of the gated graphene is determined by its initial state prior to entering the hysteretic region. Due to this effect the difference in resistance of the gated graphene measured in the hysteretic region at the same applied voltages can be as high as 70%. The observed effect can be explained by assuming that charge carriers in graphene and oppositely charged molecular ions from the solution form quasistable interfacial complexes at the graphene interface. These complexes likely preserve the initial state by preventing charge carriers in graphene from discharging in the hysteretic region.

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Separate Intramolecular Targets for Protein Kinase A Control N-Methyl-d-aspartate Receptor Gating and Ca2+ Permeability*

PubMed Central

Aman, Teresa K.; Maki, Bruce A.; Ruffino, Thomas J.; Kasperek, Eileen M.; Popescu, Gabriela K.

2014-01-01

Protein kinase A (PKA) enhances synaptic plasticity in the central nervous system by increasing NMDA receptor current amplitude and Ca2+ flux in an isoform-dependent yet poorly understood manner. PKA phosphorylates multiple residues on GluN1, GluN2A, and GluN2B subunits in vivo, but the functional significance of this multiplicity is unknown. We examined gating and permeation properties of recombinant NMDA receptor isoforms and of receptors with altered C-terminal domain (CTDs) prior to and after pharmacological inhibition of PKA. We found that PKA inhibition decreased GluN1/GluN2B but not GluN1/GluN2A gating; this effect was due to slower rates for receptor activation and resensitization and was mediated exclusively by the GluN2B CTD. In contrast, PKA inhibition reduced NMDA receptor-relative Ca2+ permeability (PCa/PNa) regardless of the GluN2 isoform and required the GluN1 CTD; this effect was due primarily to decreased unitary Ca2+ conductance, because neither Na+ conductance nor Ca2+-dependent block was altered substantially. Finally, we show that both the gating and permeation effects can be reproduced by changing the phosphorylation state of a single residue: GluN2B Ser-1166 and GluN1 Ser-897, respectively. We conclude that PKA effects on NMDA receptor gating and Ca2+ permeability rely on distinct phosphorylation sites located on the CTD of GluN2B and GluN1 subunits. This separate control of NMDA receptor properties by PKA may account for the specific effects of PKA on plasticity during synaptic development and may lead to drugs targeted to alter NMDA receptor gating or Ca2+ permeability. PMID:24847051

Thermally stable In0.7Ga0.3As/In0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization

NASA Astrophysics Data System (ADS)

Ian, Ka Wa; Zawawiand, Mohamad Adzhar Md; Missous, Mohamed

2014-03-01

This work described the fabrication and performances of strained channel In0.52Al0.47As/In0.7Ga0.3As/InP pHEMTs with thermally evaporated Pd/Ti/Au gate metallization. The electrical characteristics of these Pd-gate devices are studied to investigate the effects of changing the Pd metal thickness, annealing temperature and annealing time. Following annealing at 200 °C for 35 min, a 10 nm Pd-gate device displays a VTH of -0.25 V, which is significantly smaller compared to those with Ti/Au gate schemes showing VTH = -0.75 V. A 1 um gate length device exhibits an improved Gm of 580 mS mm-1 (from 500 mS mm-1), a high IDSmax of 400 mA mm-1 (from 330 mA mm-1) and good fT and fmax of 24.5 and 49 GHz commensurate with the 1 µm gate length. All these enhancements are attributed to the controllable gate sinking of Pd. The device shows no significant degradation even after annealing at 230 °C for more than 5 h, which implies that the reliability of these Pd-gate structures is excellent.

Volumetric measurement of human red blood cells by MOSFET-based microfluidic gate.

PubMed

Guo, Jinhong; Ai, Ye; Cheng, Yuanbing; Li, Chang Ming; Kang, Yuejun; Wang, Zhiming

2015-08-01

In this paper, we present a MOSFET-based (metal oxide semiconductor field-effect transistor) microfluidic gate to characterize the translocation of red blood cells (RBCs) through a gate. In the microfluidic system, the bias voltage modulated by the particles or biological cells is connected to the gate of MOSFET. The particles or cells can be detected by monitoring the MOSFET drain current instead of DC/AC-gating method across the electronic gate. Polystyrene particles with various standard sizes are utilized to calibrate the proposed device. Furthermore, RBCs from both adults and newborn blood sample are used to characterize the performance of the device in distinguishing the two types of RBCs. As compared to conventional DC/AC current modulation method, the proposed device demonstrates a higher sensitivity and is capable of being a promising platform for bioassay analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Signatures of Mechanosensitive Gating.

PubMed

Morris, Richard G

2017-01-10

The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

FLUID PRESSURE AND CAM OPERATED VACUUM VALVE

DOEpatents

Batzer, T.H.

1963-11-26

An ultra-high vacuum valve that is bakable, reusable, and capable of being quickly opened and closed is described. A translationally movable valve gate having an annular ridge is adapted to contact an annular soft metal gasket disposed at the valve seat such that the soft metal gasket extends beyond the annular ridge on all sides. The valve gate is closed, by first laterally aligning the valve gate with the valve seat and then bringing the valve gate and valve seat into seating contact by the translational movement of a ramp-like wedging means that engages similar ramp-like stractures at the base of the valve gate to force the valve gate into essentially pressureless contact with the annular soft metal gasket. This gasket is then pressurized from beneath by a fluid thereby effecting a vacuura tight seal between the gasket and the ridge. (AEC)

Dual Input AND Gate Fabricated From a Single Channel Poly (3-Hexylthiophene) Thin Film Field Effect Transistor

NASA Technical Reports Server (NTRS)

Pinto, N. J.; Perez, R.; Mueller, C. H.; Theofylaktos, N.; Miranda, F. A.

2006-01-01

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.

Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons.

PubMed

Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

2016-05-05

The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels.

Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons

PubMed Central

Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E.; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

2016-01-01

The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels. PMID:27164140

Role of deposition and annealing of the top gate dielectric in a-IGZO TFT-based dual-gate ion-sensitive field-effect transistors

NASA Astrophysics Data System (ADS)

Kumar, Narendra; Sutradhar, Moitri; Kumar, Jitendra; Panda, Siddhartha

2017-03-01

The deposition of the top gate dielectric in thin film transistor (TFT)-based dual-gate ion-sensitive field-effect transistors (DG ISFETs) is critical, and expected not to affect the bottom gate TFT characteristics, while providing a higher pH sensitive surface and efficient capacitive coupling between the gates. Amorphous Ta2O5, in addition to having good sensing properties, possesses a high dielectric constant of ˜25 making it well suited as the top gate dielectric in a DG ISFET by providing higher capacitive coupling (ratio of C top/C bottom) leading to higher amplification. To avoid damage of the a-IGZO channel reported to be caused by plasma exposure, deposition of Ta2O5 by e-beam evaporation followed by annealing was investigated in this work to obtain sensitivity over the Nernst limit. The deteriorated bottom gate TFT characteristics, indicated by an increase in the channel conductance, confirmed that plasma exposure is not the sole contributor to the changes. Oxygen vacancies at the Ta2O5/a-IGZO interface, which emerged during processing, increased the channel conductivity, became filled by optimum annealing in oxygen at 400 °C for 1 h, which was confirmed by an x-ray photoelectron spectroscopy depth profiling analysis. The obtained pH sensitivity of the TFT-based DG ISFET was 402 mV pH-1, which is about 6.8 times the Nernst limit (59 mV pH-1). The concept of capacitive coupling was also demonstrated by simulating an a-IGZO-based DG TFT structure. Here, the exposure of the top gate dielectric to the electrolyte without applying any top gate bias led to changes in the measured threshold voltage of the bottom gate TFT, and this obviated the requirement of a reference electrode needed in conventional ISFETs and other reported DG ISFETs. These devices, with high sensitivities and requiring low volumes (˜2 μl) of analyte solution, could be potential candidates for utilization as chemical sensors and biosensors.

Issues in quantification of registered respiratory gated PET/CT in the lung.

PubMed

Cuplov, Vesna; Holman, Beverley F; McClelland, Jamie; Modat, Marc; Hutton, Brian F; Thielemans, Kris

2017-12-14

PET/CT quantification of lung tissue is limited by several difficulties: the lung density and local volume changes during respiration, the anatomical mismatch between PET and CT and the relative contributions of tissue, air and blood to the PET signal (the tissue fraction effect). Air fraction correction (AFC) has been shown to improve PET image quantification in the lungs. Methods to correct for the movement and anatomical mismatch involve respiratory gating and image registration techniques. While conventional registration methods only account for spatial mismatch, the Jacobian determinant of the deformable registration transformation field can be used to estimate local volume changes and could therefore potentially be used to correct (i.e. Jacobian Correction, JC) the PET signal for changes in concentration due to local volume changes. This work aims to investigate the relationship between variations in the lung due to respiration, specifically density, tracer concentration and local volume changes. In particular, we study the effect of AFC and JC on PET quantitation after registration of respiratory gated PET/CT patient data. Six patients suffering from lung cancer with solitary pulmonary nodules underwent [Formula: see text]F-FDG PET/cine-CT. The PET data were gated into six respiratory gates using displacement gating based on a real-time position management (RPM) signal and reconstructed with matched gated CT. The PET tracer concentration and tissue density were extracted from registered gated PET and CT images before and after corrections (AFC or JC) and compared to the values from the reference images. Before correction, we observed a linear correlation between the PET tracer concentration values and density. Across all gates and patients, the maximum relative change in PET tracer concentration before (after) AFC was found to be 16.2% (4.1%) and the maximum relative change in tissue density and PET tracer concentration before (after) JC was found to be 17.1% (5.5%) and 16.2% (6.8%) respectively. Overall our results show that both AFC or JC largely explain the observed changes in PET tracer activity over the respiratory cycle. We also speculate that a second order effect is related to change in fluid content but this needs further investigation. Consequently, either AFC or JC is recommended when combining lung PET images from different gates to reduce noise.

Issues in quantification of registered respiratory gated PET/CT in the lung

NASA Astrophysics Data System (ADS)

Cuplov, Vesna; Holman, Beverley F.; McClelland, Jamie; Modat, Marc; Hutton, Brian F.; Thielemans, Kris

2018-01-01

PET/CT quantification of lung tissue is limited by several difficulties: the lung density and local volume changes during respiration, the anatomical mismatch between PET and CT and the relative contributions of tissue, air and blood to the PET signal (the tissue fraction effect). Air fraction correction (AFC) has been shown to improve PET image quantification in the lungs. Methods to correct for the movement and anatomical mismatch involve respiratory gating and image registration techniques. While conventional registration methods only account for spatial mismatch, the Jacobian determinant of the deformable registration transformation field can be used to estimate local volume changes and could therefore potentially be used to correct (i.e. Jacobian Correction, JC) the PET signal for changes in concentration due to local volume changes. This work aims to investigate the relationship between variations in the lung due to respiration, specifically density, tracer concentration and local volume changes. In particular, we study the effect of AFC and JC on PET quantitation after registration of respiratory gated PET/CT patient data. Six patients suffering from lung cancer with solitary pulmonary nodules underwent 18 F-FDG PET/cine-CT. The PET data were gated into six respiratory gates using displacement gating based on a real-time position management (RPM) signal and reconstructed with matched gated CT. The PET tracer concentration and tissue density were extracted from registered gated PET and CT images before and after corrections (AFC or JC) and compared to the values from the reference images. Before correction, we observed a linear correlation between the PET tracer concentration values and density. Across all gates and patients, the maximum relative change in PET tracer concentration before (after) AFC was found to be 16.2% (4.1%) and the maximum relative change in tissue density and PET tracer concentration before (after) JC was found to be 17.1% (5.5%) and 16.2% (6.8%) respectively. Overall our results show that both AFC or JC largely explain the observed changes in PET tracer activity over the respiratory cycle. We also speculate that a second order effect is related to change in fluid content but this needs further investigation. Consequently, either AFC or JC is recommended when combining lung PET images from different gates to reduce noise.

Improving 4D plan quality for PBS-based liver tumour treatments by combining online image guided beam gating with rescanning

NASA Astrophysics Data System (ADS)

Zhang, Ye; Knopf, Antje-Christin; Weber, Damien Charles; Lomax, Antony John

2015-10-01

Pencil beam scanned (PBS) proton therapy has many advantages over conventional radiotherapy, but its effectiveness for treating mobile tumours remains questionable. Gating dose delivery to the breathing pattern is a well-developed method in conventional radiotherapy for mitigating tumour-motion, but its clinical efficiency for PBS proton therapy is not yet well documented. In this study, the dosimetric benefits and the treatment efficiency of beam gating for PBS proton therapy has been comprehensively evaluated. A series of dedicated 4D dose calculations (4DDC) have been performed on 9 different 4DCT(MRI) liver data sets, which give realistic 4DCT extracting motion information from 4DMRI. The value of 4DCT(MRI) is its capability of providing not only patient geometries and deformable breathing characteristics, but also includes variations in the breathing patterns between breathing cycles. In order to monitor target motion and derive a gating signal, we simulate time-resolved beams’ eye view (BEV) x-ray images as an online motion surrogate. 4DDCs have been performed using three amplitude-based gating window sizes (10/5/3 mm) with motion surrogates derived from either pre-implanted fiducial markers or the diaphragm. In addition, gating has also been simulated in combination with up to 19 times rescanning using either volumetric or layered approaches. The quality of the resulting 4DDC plans has been quantified in terms of the plan homogeneity index (HI), total treatment time and duty cycle. Results show that neither beam gating nor rescanning alone can fully retrieve the plan homogeneity of the static reference plan. Especially for variable breathing patterns, reductions of the effective duty cycle to as low as 10% have been observed with the smallest gating rescanning window (3 mm), implying that gating on its own for such cases would result in much longer treatment times. In addition, when rescanning is applied on its own, large differences between volumetric and layered rescanning have been observed as a function of increasing number of re-scans. However, once gating and rescanning is combined, HI to within 2% of the static plan could be achieved in the clinical target volume, with only moderately prolonged treatment times, irrespective of the rescanning strategy used. Moreover, these results are independent of the motion surrogate used. In conclusion, our results suggest image guided beam gating, combined with rescanning, is a feasible, effective and efficient motion mitigation approach for PBS-based liver tumour treatments.

Cellular defibrillation: interaction of micro-scale electric fields with voltage-gated ion channels.

PubMed

Kargol, Armin; Malkinski, Leszek; Eskandari, Rahmatollah; Carter, Maya; Livingston, Daniel

2015-09-01

We study the effect of micro-scale electric fields on voltage-gated ion channels in mammalian cell membranes. Such micro- and nano-scale electric fields mimic the effects of multiferroic nanoparticles that were recently proposed [1] as a novel way of controlling the function of voltage-sensing biomolecules such as ion channels. This article describes experimental procedures and initial results that reveal the effect of the electric field, in close proximity of cells, on the ion transport through voltage-gated ion channels. We present two configurations of the whole-cell patch-clamping apparatus that were used to detect the effect of external stimulation on ionic currents and discuss preliminary results that indicate modulation of the ionic currents consistent with the applied stimulus.

Effect of electrode design on crosstalk between neighboring organic field-effect transistors based on one single crystal

NASA Astrophysics Data System (ADS)

Li, Mengjie; Tang, Qingxin; Tong, Yanhong; Zhao, Xiaoli; Zhou, Shujun; Liu, Yichun

2018-03-01

The design of high-integration organic circuits must be such that the interference between neighboring devices is eliminated. Here, rubrene crystals were used to study the effect of the electrode design on crosstalk between neighboring organic field-effect transistors (OFETs). Results show that a decreased source/drain interval and gate electrode width can decrease the diffraction distance of the current, and therefore can weaken the crosstalk. In addition, the inherent low carrier concentration in organic semiconductors can create a high-resistance barrier at the space between gate electrodes of neighboring devices, limiting or even eliminating the crosstalk as a result of the gate electrode width being smaller than the source/drain electrode width.

Lateral Orbitofrontal Cortical Modulation on the Medial Prefrontal Cortex-Amygdala Pathway: Differential Regulation of Intra-Amygdala GABAA and GABAB Receptors.

PubMed

Chang, Chun-Hui

2017-07-01

The basolateral complex of the amygdala receives inputs from neocortical areas, including the medial prefrontal cortex and lateral orbitofrontal cortex. Earlier studies have shown that lateral orbitofrontal cortex activation exerts an inhibitory gating on medial prefrontal cortex-amygdala information flow. Here we examined the individual role of GABAA and GABAB receptors in this process. In vivo extracellular single-unit recordings were done in anesthetized rats. We searched amygdala neurons that fire in response to medial prefrontal cortex activation, tested lateral orbitofrontal cortex gating at different delays (lateral orbitofrontal cortex-medial prefrontal cortex delays: 25, 50, 100, 250, 500, and 1000 milliseconds), and examined differential contribution of GABAA and GABAB receptors with iontophoresis. Relative to baseline, lateral orbitofrontal cortex stimulation exerted an inhibitory modulatory gating on the medial prefrontal cortex-amygdala pathway and was effective up to a long delay of 500 ms (long-delay latencies at 100, 250, and 500 milliseconds). Moreover, blockade of intra-amygdala GABAA receptors with bicuculline abolished the lateral orbitofrontal cortex inhibitory gating at both short- (25 milliseconds) and long-delay (100 milliseconds) intervals, while blockade of GABAB receptors with saclofen reversed the inhibitory gating at long delay (100 milliseconds) only. Among the majority of the neurons examined (8 of 9), inactivation of either GABAA or GABAB receptors during baseline did not change evoked probability per se, suggesting that local feed-forward inhibitory mechanism is pathway specific. Our results suggest that the effect of lateral orbitofrontal cortex inhibitory modulatory gating was effective up to 500 milliseconds and that intra-amygdala GABAA and GABAB receptors differentially modulate the short- and long-delay lateral orbitofrontal cortex inhibitory gating on the medial prefrontal cortex-amygdala pathway. © The Author 2017. Published by Oxford University Press on behalf of CINP.

Nanosecond Time-Resolved Microscopic Gate-Modulation Imaging of Polycrystalline Organic Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Matsuoka, Satoshi; Tsutsumi, Jun'ya; Matsui, Hiroyuki; Kamata, Toshihide; Hasegawa, Tatsuo

2018-02-01

We develop a time-resolved microscopic gate-modulation (μ GM ) imaging technique to investigate the temporal evolution of the channel current and accumulated charges in polycrystalline pentacene thin-film transistors (TFTs). A time resolution of as high as 50 ns is achieved by using a fast image-intensifier system that could amplify a series of instantaneous optical microscopic images acquired at various time intervals after the stepped gate bias is switched on. The differential images obtained by subtracting the gate-off image allows us to acquire a series of temporal μ GM images that clearly show the gradual propagation of both channel charges and leaked gate fields within the polycrystalline channel layers. The frontal positions for the propagations of both channel charges and leaked gate fields coincide at all the time intervals, demonstrating that the layered gate dielectric capacitors are successively transversely charged up along the direction of current propagation. The initial μ GM images also indicate that the electric field effect is originally concentrated around a limited area with a width of a few micrometers bordering the channel-electrode interface, and that the field intensity reaches a maximum after 200 ns and then decays. The time required for charge propagation over the whole channel region with a length of 100 μ m is estimated at about 900 ns, which is consistent with the measured field-effect mobility and the temporal-response model for organic TFTs. The effect of grain boundaries can be also visualized by comparison of the μ GM images for the transient and the steady states, which confirms that the potential barriers at the grain boundaries cause the transient shift in the accumulated charges or the transient accumulation of additional charges around the grain boundaries.

Numerical Simulation of Induction Channel Furnace to Investigate Efficiency for low Frequencies

NASA Astrophysics Data System (ADS)

Hang, N. Tran Thi; Lüdtke, U.

2018-05-01

The foundry industry worldwide commonly uses induction channel furnaces to heat and melt alloys. The operating frequency is one of the main issues when constructing an efficient channel furnace. It is possible to choose operating frequencies lower than 50 Hz using a modern IGBT power converter. This work shows the simulation results using ANSYS with the goal of finding the best electrical frequency necessary to operate the induction furnace. First, a two-dimensional model is used to calculate the efficiency depending on frequency. Then, the channel model is extended to a more realistic three-dimensional model. Finally, the influence of frequency, inductor profile, and several components of the induction channel furnace are discussed.

Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

PubMed

Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

2017-11-08

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Corps of Engineers Hydraulic Design Criteria. Volume 2

DTIC Science & Technology

1977-01-01

21.7 (Chart 310-1/1) 6 a = T - =0.3 ft. 2.7 Effective pressure D + a = 75.0 + 0.3 = 75.3 ft. I : CREST GATES1 WAVC PRESSURE SAMPLE COMPUTATION HYDRAULIC... T -x 75.3.- 25.7 ft Maximum hydraulic load on gate (R) RR y + -j--- x gate height V y - specific weight of water -62.4 lb/ft 3 16.41.7;+25.7)2...j- xhih f tutr -62.4 ( -2;5.) 80 - 192,000 lb/ft of width / t Note: Equivalent for still-water level is 175,000 lb/ft of width. CREST GATES WAVE

Diminished auditory sensory gating during active auditory verbal hallucinations.

PubMed

Thoma, Robert J; Meier, Andrew; Houck, Jon; Clark, Vincent P; Lewine, Jeffrey D; Turner, Jessica; Calhoun, Vince; Stephen, Julia

2017-10-01

Auditory sensory gating, assessed in a paired-click paradigm, indicates the extent to which incoming stimuli are filtered, or "gated", in auditory cortex. Gating is typically computed as the ratio of the peak amplitude of the event related potential (ERP) to a second click (S2) divided by the peak amplitude of the ERP to a first click (S1). Higher gating ratios are purportedly indicative of incomplete suppression of S2 and considered to represent sensory processing dysfunction. In schizophrenia, hallucination severity is positively correlated with gating ratios, and it was hypothesized that a failure of sensory control processes early in auditory sensation (gating) may represent a larger system failure within the auditory data stream; resulting in auditory verbal hallucinations (AVH). EEG data were collected while patients (N=12) with treatment-resistant AVH pressed a button to indicate the beginning (AVH-on) and end (AVH-off) of each AVH during a paired click protocol. For each participant, separate gating ratios were computed for the P50, N100, and P200 components for each of the AVH-off and AVH-on states. AVH trait severity was assessed using the Psychotic Symptoms Rating Scales AVH Total score (PSYRATS). The results of a mixed model ANOVA revealed an overall effect for AVH state, such that gating ratios were significantly higher during the AVH-on state than during AVH-off for all three components. PSYRATS score was significantly and negatively correlated with N100 gating ratio only in the AVH-off state. These findings link onset of AVH with a failure of an empirically-defined auditory inhibition system, auditory sensory gating, and pave the way for a sensory gating model of AVH. Copyright © 2017 Elsevier B.V. All rights reserved.

A comparison study: image-based vs signal-based retrospective gating on microCT

NASA Astrophysics Data System (ADS)

Liu, Xuan; Salmon, Phil L.; Laperre, Kjell; Sasov, Alexander

2017-09-01

Retrospective gating on animal studies with microCT has gained popularity in recent years. Previously, we use ECG signals for cardiac gating and breathing airflow or video signals of abdominal motion for respiratory gating. This method is adequate and works well for most applications. However, through the years, researchers have noticed some pitfalls in the method. For example, the additional signal acquisition step may increase failure rate in practice. X-Ray image-based gating, on the other hand, does not require any extra step in the scanning. Therefore we investigate imagebased gating techniques. This paper presents a comparison study of the image-based versus signal-based approach to retrospective gating. The two application areas we have studied are respiratory and cardiac imaging for both rats and mice. Image-based respiratory gating on microCT is relatively straightforward and has been done by several other researchers and groups. This method retrieves an intensity curve of a region of interest (ROI) placed in the lung area on all projections. From scans on our systems based on step-and-shoot scanning mode, we confirm that this method is very effective. A detailed comparison between image-based and signal-based gating methods is given. For cardiac gating, breathing motion is not negligible and has to be dealt with. Another difficulty in cardiac gating is the relatively smaller amplitude of cardiac movements comparing to the respirational movements, and the higher heart rate. Higher heart rate requires high speed image acquisition. We have been working on our systems to improve the acquisition speed. A dual gating technique has been developed to achieve adequate cardiac imaging.

Error-Transparent Quantum Gates for Small Logical Qubit Architectures

NASA Astrophysics Data System (ADS)

Kapit, Eliot

2018-02-01

One of the largest obstacles to building a quantum computer is gate error, where the physical evolution of the state of a qubit or group of qubits during a gate operation does not match the intended unitary transformation. Gate error stems from a combination of control errors and random single qubit errors from interaction with the environment. While great strides have been made in mitigating control errors, intrinsic qubit error remains a serious problem that limits gate fidelity in modern qubit architectures. Simultaneously, recent developments of small error-corrected logical qubit devices promise significant increases in logical state lifetime, but translating those improvements into increases in gate fidelity is a complex challenge. In this Letter, we construct protocols for gates on and between small logical qubit devices which inherit the parent device's tolerance to single qubit errors which occur at any time before or during the gate. We consider two such devices, a passive implementation of the three-qubit bit flip code, and the author's own [E. Kapit, Phys. Rev. Lett. 116, 150501 (2016), 10.1103/PhysRevLett.116.150501] very small logical qubit (VSLQ) design, and propose error-tolerant gate sets for both. The effective logical gate error rate in these models displays superlinear error reduction with linear increases in single qubit lifetime, proving that passive error correction is capable of increasing gate fidelity. Using a standard phenomenological noise model for superconducting qubits, we demonstrate a realistic, universal one- and two-qubit gate set for the VSLQ, with error rates an order of magnitude lower than those for same-duration operations on single qubits or pairs of qubits. These developments further suggest that incorporating small logical qubits into a measurement based code could substantially improve code performance.

Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters

NASA Technical Reports Server (NTRS)

Krasowski, Michael J.

2011-01-01

A circuit topography is used to create usable, digital logic gates using N (negatively doped) channel junction field effect transistors (JFETs), load resistors, level shifting resistors, and supply rails whose values are based on the DC parametric distributions of these JFETs. This method has direct application to the current state-of-the-art in high-temperature (300 to 500 C and higher) silicon carbide (SiC) device production, and defines an adaptation to the logic gate described in U.S. Patent 7,688,117 in that, by removing the level shifter from the output of the gate structure described in the patent (and applying it to the input of the same gate), a source-coupled gate topography is created. This structure allows for the construction AND/OR (sum of products) arrays that use far fewer transistors and resistors than the same array as constructed from the gates described in the aforementioned patent. This plays a central role when large multiplexer constructs are necessary; for example, as in the construction of memory. This innovation moves the resistive level shifter from the output of the basic gate structure to the front as if the input is now configured as what would be the output of the preceding gate, wherein the output is the two level shifting resistors. The output of this innovation can now be realized as the lone follower transistor with its source node as the gate output. Additionally, one may leave intact the resistive level shifter on the new gate topography. A source-coupled to direct-coupled logic translator will be the result.

Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori

2016-07-18

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulationmore » by the gate and pinch off.« less

Effect of stochastic gating on channel-facilitated transport of non-interacting and strongly repelling solutes

NASA Astrophysics Data System (ADS)

Berezhkovskii, Alexander M.; Bezrukov, Sergey M.

2017-08-01

Ligand- or voltage-driven stochastic gating—the structural rearrangements by which the channel switches between its open and closed states—is a fundamental property of biological membrane channels. Gating underlies the channel's ability to respond to different stimuli and, therefore, to be functionally regulated by the changing environment. The accepted understanding of the gating effect on the solute flux through the channel is that the mean flux is the product of the flux through the open channel and the probability of finding the channel in the open state. Here, using a diffusion model of channel-facilitated transport, we show that this is true only when the gating is much slower than the dynamics of solute translocation through the channel. If this condition breaks, the mean flux could differ from this simple estimate by orders of magnitude.

A convenient method of manufacturing liquid-gated MoS2 field effect transistors

NASA Astrophysics Data System (ADS)

Lin, Kabin; Yuan, Zhishan; Yu, Yu; Li, Kun; Li, Zhongwu; Sha, Jingjie; Li, Tie; Chen, Yunfei

2017-10-01

In this paper, we present a simple and convenient method of manufacturing liquid-gated MoS2 field effect transistors (FETs). A Si3N4 chip is firstly fabricated by the semiconductor manufacturing process, then the mechanical exfoliation MoS2 is transferred onto the Si3N4 chip and is connected with the gold electrodes by depositing platinum to construct the MoS2 FETs. The liquid-gated is formed by injecting 0.1 M NaCl solution into reservoir to contact the back side of the Si3N4. Our measured results show that the contact properties between MoS2 and electrodes are in well condition and the liquid-gated MoS2 FETs have a high mobility that can reach up to 109 cm2 V-1 s-1.

A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-03-01

In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

Extended-gate organic field-effect transistor for the detection of histamine in water

NASA Astrophysics Data System (ADS)

Minamiki, Tsukuru; Minami, Tsuyoshi; Yokoyama, Daisuke; Fukuda, Kenjiro; Kumaki, Daisuke; Tokito, Shizuo

2015-04-01

As part of our ongoing research program to develop health care sensors based on organic field-effect transistor (OFET) devices, we have attempted to detect histamine using an extended-gate OFET. Histamine is found in spoiled or decayed fish, and causes foodborne illness known as scombroid food poisoning. The new OFET device possesses an extended gate functionalized by carboxyalkanethiol that can interact with histamine. As a result, we have succeeded in detecting histamine in water through a shift in OFET threshold voltage. This result indicates the potential utility of the designed OFET devices in food freshness sensing.

p53 activated by AND gate genetic circuit under radiation and hypoxia for targeted cancer gene therapy.

PubMed

Ding, Miao; Li, Rong; He, Rong; Wang, Xingyong; Yi, Qijian; Wang, Weidong

2015-09-01

Radio-activated gene therapy has been developed as a novel therapeutic strategy against cancer; however, expression of therapeutic gene in peritumoral tissues will result in unacceptable toxicity to normal cells. To restrict gene expression in targeted tumor mass, we used hypoxia and radiation tolerance features of tumor cells to develop a synthetic AND gate genetic circuit through connecting radiation sensitivity promoter cArG6 , heat shock response elements SNF1, HSF1 and HSE4 with retroviral vector plxsn. Their construction and dynamic activity process were identified through downstream enhanced green fluorescent protein and wtp53 expression in non-small cell lung cancer A549 cells and in a nude mice model. The result showed that AND gate genetic circuit could be activated by lower required radiation dose (6 Gy) and after activated, AND gate could induce significant apoptosis effects and growth inhibition of cancer cells in vitro and in vivo. The radiation- and hypoxia-activated AND gate genetic circuit, which could lead to more powerful target tumoricidal activity represented a promising strategy for both targeted and effective gene therapy of human lung adenocarcinoma and low dose activation character of the AND gate genetic circuit implied that this model could be further exploited to decrease side-effects of clinical radiation therapy. © 2015 The Authors. Cancer Science published by Wiley Publishing Asia Pty Ltd on behalf of Japanese Cancer Association.

Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

2017-08-01

We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

Antidepressants May Mitigate the Effects of Prenatal Maternal Anxiety on Infant Auditory Sensory Gating

PubMed Central

Hunter, Sharon K.; Mendoza, Jordan H.; D’Anna, Kimberly; Zerbe, Gary O; McCarthy, LizBeth; Hoffman, Camille; Freedman, Robert; Ross, Randal G.

2013-01-01

Objective Prenatal maternal anxiety has detrimental effects on the resulting offspring’s neurocognitive development, including impaired attentional function. Antidepressants are commonly utilized during pregnancy, yet their impact on offspring attention and their interaction with maternal anxiety has not been assessed. Using P50 auditory sensory gating, a putative marker of early attentional processes measurable in young infants, the impact of maternal anxiety and antidepressant use are explored. Method Two hundred forty-two mother-infant dyads were classified relative to maternal history of anxiety and maternal prenatal antidepressant use. Infant P50 auditory sensory gating was recorded during active sleep at a mean± standard deviation of 76 ± 38 days of age. Results In the absence of prenatal antidepressant exposure, infants with mothers with a history of anxiety diagnoses had diminished P50 sensory gating (p<.001). Prenatal antidepressants mitigated the effect of anxiety (uncorrected p=.041). The effect of maternal anxiety was limited to amplitude of response to the second stimulus while antidepressants impacted the amplitude or response to both the first and second stimulus. Conclusion Maternal anxiety disorders are associated less inhibition during infant sensory gating, a performance deficit mitigated by prenatal antidepressant use. This effect may be important in considering the risks and benefits of prenatal antidepressant treatment. Cholinergic mechanisms are hypothesized for both anxiety and antidepressant effects; however the cholinergic receptors involved are likely different for anxiety and antidepressant effects. Additional work focused on understanding how treatment impacts the relationship between maternal prenatal illness and offspring neurocognitive development is indicated. PMID:22581104

MOSFET Electric-Charge Sensor

NASA Technical Reports Server (NTRS)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr

We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasingmore » temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.« less

A magnetoelectric flux gate: new approach for weak DC magnetic field detection.

PubMed

Chu, Zhaoqiang; Shi, Huaduo; PourhosseiniAsl, Mohammad Javad; Wu, Jingen; Shi, Weiliang; Gao, Xiangyu; Yuan, Xiaoting; Dong, Shuxiang

2017-08-17

The magnetic flux gate sensors based on Faraday's Law of Induction are widely used for DC or extremely low frequency magnetic field detection. Recently, as the fast development of multiferroics and magnetoelectric (ME) composite materials, a new technology based on ME coupling effect is emerging for potential devices application. Here, we report a magnetoelectric flux gate sensor (MEFGS) for weak DC magnetic field detection for the first time, which works on a similar magnetic flux gate principle, but based on ME coupling effect. The proposed MEFGS has a shuttle-shaped configuration made of amorphous FeBSi alloy (Metglas) serving as both magnetic and magnetostrictive cores for producing a closed-loop high-frequency magnetic flux and also a longitudinal vibration, and one pair of embedded piezoelectric PMN-PT fibers ([011]-oriented Pb(Mg,Nb)O 3 -PbTiO 3 single crystal) serving as ME flux gate in a differential mode for detecting magnetic anomaly. In this way, the relative change in output signal of the MEFGS under an applied DC magnetic anomaly of 1 nT was greatly enhanced by a factor of 4 to 5 in comparison with the previous reports. The proposed ME flux gate shows a great potential for magnetic anomaly detections, such as magnetic navigation, magnetic based medical diagnosis, etc.

Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

PubMed

Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás; Branquinho, Rita; Salgueiro, Daniela; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

2015-01-14

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Influence of target reflection on three-dimensional range gated reconstruction.

PubMed

Chua, Sing Yee; Wang, Xin; Guo, Ningqun; Tan, Ching Seong

2016-08-20

The range gated technique is a promising laser ranging method that is widely used in different fields such as surveillance, industry, and military. In a range gated system, a reflected laser pulse returned from the target scene contains key information for range reconstruction, which directly affects the system performance. Therefore, it is necessary to study the characteristics and effects of the target reflection factor. In this paper, theoretical and experimental analyses are performed to investigate the influence of target reflection on three-dimensional (3D) range gated reconstruction. Based on laser detection and ranging (LADAR) and bidirectional reflection distribution function (BRDF) theory, a 3D range gated reconstruction model is derived and the effect on range accuracy is analyzed from the perspectives of target surface reflectivity and angle of laser incidence. Our theoretical and experimental study shows that the range accuracy is proportional to the target surface reflectivity, but it decreases when the angle of incidence increases to adhere to the BRDF model. The presented findings establish a comprehensive understanding of target reflection in 3D range gated reconstruction, which is of interest to various applications such as target recognition and object modeling. This paper provides a reference for future improvement to perform accurate range compensation or correction.

Improved two-photon imaging of living neurons in brain tissue through temporal gating

PubMed Central

Gautam, Vini; Drury, Jack; Choy, Julian M. C.; Stricker, Christian; Bachor, Hans-A.; Daria, Vincent R.

2015-01-01

We optimize two-photon imaging of living neurons in brain tissue by temporally gating an incident laser to reduce the photon flux while optimizing the maximum fluorescence signal from the acquired images. Temporal gating produces a bunch of ~10 femtosecond pulses and the fluorescence signal is improved by increasing the bunch-pulse energy. Gating is achieved using an acousto-optic modulator with a variable gating frequency determined as integral multiples of the imaging sampling frequency. We hypothesize that reducing the photon flux minimizes the photo-damage to the cells. Our results, however, show that despite producing a high fluorescence signal, cell viability is compromised when the gating and sampling frequencies are equal (or effectively one bunch-pulse per pixel). We found an optimum gating frequency range that maintains the viability of the cells while preserving a pre-set fluorescence signal of the acquired two-photon images. The neurons are imaged while under whole-cell patch, and the cell viability is monitored as a change in the membrane’s input resistance. PMID:26504651

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M.

2015-06-29

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of themore » inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.« less

Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach

NASA Astrophysics Data System (ADS)

Arefinia, Zahra; Orouji, Ali A.

2009-02-01

The concept of dual-material gate (DMG) is applied to the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions, and the features exhibited by the resulting new structure, i.e., the DMG-CNTFET structure, have been examined for the first time by developing a two-dimensional (2D) full quantum simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. The results show DMG-CNTFET decreases significantly leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to the single material gate counterparts CNTFET. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate metals. Therefore, this work provides an incentive for further experimental exploration.

Recent Radiation Test Results for Trench Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak S.; Topper, Alyson D.; Ladbury, Raymond L.; Label, Kenneth A.

2017-01-01

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

Conformational changes in the M2 muscarinic receptor induced by membrane voltage and agonist binding

PubMed Central

Navarro-Polanco, Ricardo A; Galindo, Eloy G Moreno; Ferrer-Villada, Tania; Arias, Marcelo; Rigby, J Ryan; Sánchez-Chapula, José A; Tristani-Firouzi, Martin

2011-01-01

Abstract The ability to sense transmembrane voltage is a central feature of many membrane proteins, most notably voltage-gated ion channels. Gating current measurements provide valuable information on protein conformational changes induced by voltage. The recent observation that muscarinic G-protein-coupled receptors (GPCRs) generate gating currents confirms their intrinsic capacity to sense the membrane electrical field. Here, we studied the effect of voltage on agonist activation of M2 muscarinic receptors (M2R) in atrial myocytes and how agonist binding alters M2R gating currents. Membrane depolarization decreased the potency of acetylcholine (ACh), but increased the potency and efficacy of pilocarpine (Pilo), as measured by ACh-activated K+ current, IKACh. Voltage-induced conformational changes in M2R were modified in a ligand-selective manner: ACh reduced gating charge displacement while Pilo increased the amount of charge displaced. Thus, these ligands manifest opposite voltage-dependent IKACh modulation and exert opposite effects on M2R gating charge displacement. Finally, mutations in the putative ligand binding site perturbed the movement of the M2R voltage sensor. Our data suggest that changes in voltage induce conformational changes in the ligand binding site that alter the agonist–receptor interaction in a ligand-dependent manner. Voltage-dependent GPCR modulation has important implications for cellular signalling in excitable tissues. Gating current measurement allows for the tracking of subtle conformational changes in the receptor that accompany agonist binding and changes in membrane voltage. PMID:21282291

An Investigation of Estuary Gate Effect on Freshwater Fish Biotope and a Study on Ecological Scheduling

NASA Astrophysics Data System (ADS)

Zhang, H. W.; Hu, P.; Ni, G.; Jia, Y. W.; Ge, J. J.

2017-12-01

The presence of an estuary gate changes the existing hydrologic regime and produces a far-reaching and accumulated impact on river biotopes and fish stocks. This work investigates the estuary gate effect in the Yong River valley on the species Elopichthys bambusa (E. bambusa). By combininge hydrodynamic results from the MIKE FLOOD model with observations of the E. bambusa habitat indicators. After the establishment of the gate, the hydrological conditions required for spawning, egg hatching and oviposition stimulation, were analysed, and the corresponding strategies for ecological water demand were proposed. This study finds that satisfactory fish egg hatching hydrodynamic conditions are created when the Fenghua River flow reaches 120 m3/s in the spawning season. With Fenghua River, Yao River gate, and Yong River gate discharges at 120 m3/s, 90 m3/s, and 210 m3/s respectively, an average flow speed increase above 0.2 m/s/day may be generated for E. bambusa spawning sites and migration passages. This hydraulic condition stimulates spawning in natural streams. At the most suitable spawning season temperature, an ecological scheduling scheme that maintains a pulse flow for 5-7 days provides E. bambusa with the hydrodynamic conditions required for the whole process of reproduction, thereby maintaining healthy stream ecology. The flow rate scheduling rules, as provided in this paper, may serve as references in watershed ecological scheduling after gate installation.

Submicron Silicon MOSFET

NASA Technical Reports Server (NTRS)

Daud, T.

1986-01-01

Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.

PubMed

Lee, Jae-Kyu; Choi, Duck-Kyun

2012-07-01

Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the selection and design of compatible gate insulator is another important issue to improve the electrical properties of ZnO TFT, we have evaluated three gate insulator candidates; SiO2, SiNx and SiO2/SiNx. The SiO2 passivation on both sides of PES substrate prior to the deposition of ZnO layer was effective to enhance the mechanical and thermal stability. Among the fabricated devices, ZnO TFT employing SiNx/SiO2 stacked gate exhibited the best performance. The device parameters of interest are extracted and the on/off current ratio, field effect mobility, threshold voltage and subthreshold swing are 10(7), 22 cm2/Vs, 1.7 V and 0.4 V/decade, respectively.

Photocontrol of Voltage-Gated Ion Channel Activity by Azobenzene Trimethylammonium Bromide in Neonatal Rat Cardiomyocytes

PubMed Central

Frolova, Sheyda R.; Gaiko, Olga; Tsvelaya, Valeriya A.; Pimenov, Oleg Y.; Agladze, Konstantin I.

2016-01-01

The ability of azobenzene trimethylammonium bromide (azoTAB) to sensitize cardiac tissue excitability to light was recently reported. The dark, thermally relaxed trans- isomer of azoTAB suppressed spontaneous activity and excitation propagation speed, whereas the cis- isomer had no detectable effect on the electrical properties of cardiomyocyte monolayers. As the membrane potential of cardiac cells is mainly controlled by activity of voltage-gated ion channels, this study examined whether the sensitization effect of azoTAB was exerted primarily via the modulation of voltage-gated ion channel activity. The effects of trans- and cis- isomers of azoTAB on voltage-dependent sodium (INav), calcium (ICav), and potassium (IKv) currents in isolated neonatal rat cardiomyocytes were investigated using the whole-cell patch-clamp technique. The experiments showed that azoTAB modulated ion currents, causing suppression of sodium (Na+) and calcium (Ca2+) currents and potentiation of net potassium (K+) currents. This finding confirms that azoTAB-effect on cardiac tissue excitability do indeed result from modulation of voltage-gated ion channels responsible for action potential. PMID:27015602

Dynamic Observation of Brain-Like Learning in a Ferroelectric Synapse Device

NASA Astrophysics Data System (ADS)

Nishitani, Yu; Kaneko, Yukihiro; Ueda, Michihito; Fujii, Eiji; Tsujimura, Ayumu

2013-04-01

A brain-like learning function was implemented in an electronic synapse device using a ferroelectric-gate field effect transistor (FeFET). The FeFET was a bottom-gate type FET with a ZnO channel and a ferroelectric Pb(Zr,Ti)O3 (PZT) gate insulator. The synaptic weight, which is represented by the channel conductance of the FeFET, is updated by applying a gate voltage through a change in the ferroelectric polarization in the PZT. A learning function based on the symmetric spike-timing dependent synaptic plasticity was implemented in the synapse device using the multilevel weight update by applying a pulse gate voltage. The dynamic weighting and learning behavior in the synapse device was observed as a change in the membrane potential in a spiking neuron circuit.

Voltage-dependent gating and gating charge measurements in the Kv1.2 potassium channel

PubMed Central

Ishida, Itzel G.; Rangel-Yescas, Gisela E.; Carrasco-Zanini, Julia

2015-01-01

Much has been learned about the voltage sensors of ion channels since the x-ray structure of the mammalian voltage-gated potassium channel Kv1.2 was published in 2005. High resolution structural data of a Kv channel enabled the structural interpretation of numerous electrophysiological findings collected in various ion channels, most notably Shaker, and permitted the development of meticulous computational simulations of the activation mechanism. The fundamental premise for the structural interpretation of functional measurements from Shaker is that this channel and Kv1.2 have the same characteristics, such that correlation of data from both channels would be a trivial task. We tested these assumptions by measuring Kv1.2 voltage-dependent gating and charge per channel. We found that the Kv1.2 gating charge is near 10 elementary charges (eo), ∼25% less than the well-established 13–14 eo in Shaker. Next, we neutralized positive residues in the Kv1.2 S4 transmembrane segment to investigate the cause of the reduction of the gating charge and found that, whereas replacing R1 with glutamine decreased voltage sensitivity to ∼50% of the wild-type channel value, mutation of the subsequent arginines had a much smaller effect. These data are in marked contrast to the effects of charge neutralization in Shaker, where removal of the first four basic residues reduces the gating charge by roughly the same amount. In light of these differences, we propose that the voltage-sensing domains (VSDs) of Kv1.2 and Shaker might undergo the same physical movement, but the septum that separates the aqueous crevices in the VSD of Kv1.2 might be thicker than Shaker’s, accounting for the smaller Kv1.2 gating charge. PMID:25779871

Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM

NASA Astrophysics Data System (ADS)

Seo, Youngsoo; Kim, Shinkeun; Ko, Kyul; Woo, Changbeom; Kim, Minsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, electrical characteristics of gate-all-around (GAA) nanoplate (NP) vertical FET (VFET) were analyzed for single transistor and 6T-SRAM cell through 3D technology computer-aided design (TCAD) simulation. In VFET, gate and extension lengths are not limited by the area of device because theses lengths are vertically located. The height of NP is assumed in 40 nm considering device fabrication method (top-down approach). According to the sizes of devices, we analyzed the performances of device such as total resistance, capacitance, intrinsic gate delay, sub-threshold swing (S.S), drain-induced barrier lowering (DIBL) and static noise margin (SNM). As the gate length becomes larger, the resistance should be smaller because the total height of NP is fixed in 40 nm. Also, when the channel thickness becomes thicker, the total resistance becomes smaller since the sheet resistances of channel and extension become smaller and the contact resistance becomes smaller due to the increasing contact area. In addition, as the length of channel pitch increases, the parasitic capacitance comes to be larger due to the increasing area of gate-drain and gate-source. The performance of RC delay is best in the shortest gate length (12 nm), the thickest channel (6 nm) and the shortest channel pitch (17 nm) owing to the reduced resistance and parasitic capacitance. However, the other performances such as DIBL, S.S, on/off ratio and SNM are worst because the short channel effect is highest in this situation. Also, we investigated the performance of the multi-channel device. As the number of channels increases, the performance of device and the reliability of SRAM improve because of reduced contact resistance, increased gate dimension and multi-channel compensation effect.

Image-guided adaptive gating of lung cancer radiotherapy: a computer simulation study

NASA Astrophysics Data System (ADS)

Aristophanous, Michalis; Rottmann, Joerg; Park, Sang-June; Nishioka, Seiko; Shirato, Hiroki; Berbeco, Ross I.

2010-08-01

The purpose of this study is to investigate the effect that image-guided adaptation of the gating window during treatment could have on the residual tumor motion, by simulating different gated radiotherapy techniques. There are three separate components of this simulation: (1) the 'Hokkaido Data', which are previously measured 3D data of lung tumor motion tracks and the corresponding 1D respiratory signals obtained during the entire ungated radiotherapy treatments of eight patients, (2) the respiratory gating protocol at our institution and the imaging performed under that protocol and (3) the actual simulation in which the Hokkaido Data are used to select tumor position information that could have been collected based on the imaging performed under our gating protocol. We simulated treatments with a fixed gating window and a gating window that is updated during treatment. The patient data were divided into different fractions, each with continuous acquisitions longer than 2 min. In accordance to the imaging performed under our gating protocol, we assume that we have tumor position information for the first 15 s of treatment, obtained from kV fluoroscopy, and for the rest of the fractions the tumor position is only available during the beam-on time from MV imaging. The gating window was set according to the information obtained from the first 15 s such that the residual motion was less than 3 mm. For the fixed gating window technique the gate remained the same for the entire treatment, while for the adaptive technique the range of the tumor motion during beam-on time was measured and used to adapt the gating window to keep the residual motion below 3 mm. The algorithm used to adapt the gating window is described. The residual tumor motion inside the gating window was reduced on average by 24% for the patients with regular breathing patterns and the difference was statistically significant (p-value = 0.01). The magnitude of the residual tumor motion depended on the regularity of the breathing pattern suggesting that image-guided adaptive gating should be combined with breath coaching. The adaptive gating window technique was able to track the exhale position of the breathing cycle quite successfully. Out of a total of 53 fractions the duty cycle was greater than 20% for 42 fractions for the fixed gating window technique and for 39 fractions for the adaptive gating window technique. The results of this study suggest that real-time updating of the gating window can result in reliably low residual tumor motion and therefore can facilitate safe margin reduction.

Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

NASA Astrophysics Data System (ADS)

Takahashi, Takanori; Oikawa, Kento; Hoga, Takeshi; Uraoka, Yukiharu; Uchiyama, Kiyoshi

2017-10-01

In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded.

Enhanced Performance of Gate-First p-Channel Metal-Insulator-Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method

NASA Astrophysics Data System (ADS)

Kitano, Naomu; Horie, Shinya; Arimura, Hiroaki; Kawahara, Takaaki; Sakashita, Shinsuke; Nishida, Yukio; Yugami, Jiro; Minami, Takashi; Kosuda, Motomu; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2007-12-01

We demonstrated the use of an in situ metal/high-k fabrication method for improving the performance of metal-insulator-semiconductor field-effect transistors (MISFETs). Gate-first pMISFETs with polycrystalline silicon (poly-Si)/TiN/HfSiON stacks were fabricated by techniques based on low-damage physical vapor deposition, in which high-quality HfSiON dielectrics were formed by the interface reaction between an ultrathin metal-Hf layer (0.5 nm thick) and a SiO2 underlayer, and TiN electrodes were continuously deposited on the gate dielectrics without exposure to air. Gate-first pMISFETs with high carrier mobility and a low threshold voltage (Vth) were realized by reducing the carbon impurity in the gate stacks and improving the Vth stability against thermal treatment. As a result, we obtained superior current drivability (Ion = 350 μA/μm at Ioff = 200 pA/μm), which corresponds to a 13% improvement over that of conventional chemical vapor deposition-based metal/high-k devices.

Adiabatically-controlled two-qubit gates using quantum dot hybrid qubits

NASA Astrophysics Data System (ADS)

Frees, Adam; Gamble, John King; Friesen, Mark; Coppersmith, S. N.

With its recent success in experimentally performing single-qubit gates, the quantum dot hybrid qubit is an excellent candidate for two-qubit gating. Here, we propose an operational scheme which exploits the electrostatic properties of such qubits to yield a tunable effective coupling in a system with a static capacitive coupling between the dots. We then use numerically calculated fidelities to demonstrate the effect of charge noise on single- and two-qubit gates with this scheme. Finally, we show steps towards optimizing the gates fidelities, and discuss ways that the scheme could be further improved. This work was supported in part by ARO (W911NF-12-0607) (W911NF-12-R-0012), NSF (PHY-1104660), ONR (N00014-15-1-0029). The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

One-step resonant controlled-phase gate on distant transmon qutrits in different 1D superconducting resonators

PubMed Central

Hua, Ming; Tao, Ming-Jie; Deng, Fu-Guo; Lu Long, Gui

2015-01-01

We propose a scheme to construct the controlled-phase (c-phase) gate on distant transmon qutrits hosted in different resonators inter-coupled by a connected transmon qutrit. Different from previous works for entanglement generation and information transfer on two distant qubits in a dispersive regime in the similar systems, our gate is constructed in the resonant regime with one step. The numerical simulation shows that the fidelity of our c-phase gate is 99.5% within 86.3 ns. As an interesting application of our c-phase gate, we propose an effective scheme to complete a conventional square lattice of two-dimensional surface code layout for fault-tolerant quantum computing on the distant transmon qutrits. The four-step coupling between the nearest distant transmon qutrits, small coupling strengths of the distant transmon qutrits, and the non-population on the connection transmon qutrit can reduce the interactions among different parts of the layout effectively, which makes the layout be integrated with a large scale in an easier way. PMID:26486426

B-doped diamond field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene gate insulator

NASA Astrophysics Data System (ADS)

Karaya, Ryota; Baba, Ikki; Mori, Yosuke; Matsumoto, Tsubasa; Nakajima, Takashi; Tokuda, Norio; Kawae, Takeshi

2017-10-01

A B-doped diamond field-effect transistor (FET) with a ferroelectric vinylidene fluoride-trifluoroethylene (VDF-TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film deposited on the B-doped diamond showed good insulating and ferroelectric properties. Also, a Pt/VDF-TrFE/B-doped diamond layered structure showed ideal behavior as a metal-ferroelectric-semiconductor (MFS) capacitor, and the memory window width was 11 V, when the gate voltage was swept from 20 to -20 V. The fabricated MFS-type FET structure showed the typical properties of a depletion-type p-channel FET and a maximum drain current density of 0.87 mA/mm at room temperature. The drain current versus gate voltage curves of the proposed FET showed a clockwise hysteresis loop owing to the ferroelectricity of the VDF-TrFE gate insulator. In addition, we demonstrated the logic inverter with the MFS-type diamond FET coupled with a load resistor, and obtained the inversion behavior of the input signal and a maximum gain of 18.4 for the present circuit.

Experimental Study of the Detection Limit in Dual-Gate Biosensors Using Ultrathin Silicon Transistors.

PubMed

Wu, Ting; Alharbi, Abdullah; You, Kai-Dyi; Kisslinger, Kim; Stach, Eric A; Shahrjerdi, Davood

2017-07-25

Dual-gate field-effect biosensors (bioFETs) with asymmetric gate capacitances were shown to surpass the Nernst limit of 59 mV/pH. However, previous studies have conflicting findings on the effect of the capacitive amplification scheme on the sensor detection limit, which is inversely proportional to the signal-to-noise ratio (SNR). Here, we present a systematic experimental investigation of the SNR using ultrathin silicon transistors. Our sensors operate at low voltage and feature asymmetric front and back oxide capacitances with asymmetry factors of 1.4 and 2.3. We demonstrate that in the dual-gate configuration, the response of our bioFETs to the pH change increases proportional to the asymmetry factor and indeed exceeds the Nernst limit. Further, our results reveal that the noise amplitude also increases in proportion to the asymmetry factor. We establish that the commensurate increase of the noise amplitude originates from the intrinsic low-frequency characteristic of the sensor noise, dominated by number fluctuation. These findings suggest that this capacitive signal amplification scheme does not improve the intrinsic detection limit of the dual-gate biosensors.

Potent analgesic effects of anticonvulsants on peripheral thermal nociception in rats

PubMed Central

Todorovic, Slobodan M; Rastogi, A J; Jevtovic-Todorovic, Vesna

2003-01-01

Anticonvulsant agents are commonly used to treat neuropathic pain conditions because of their effects on voltage- and ligand-gated channels in central pain pathways. However, their interaction with ion channels in peripheral pain pathways is poorly understood. Therefore, we studied the potential analgesic effects of commonly used anticonvulsant agents in peripheral nociception. We injected anticonvulsants intradermally into peripheral receptive fields of sensory neurons in the hindpaws of adult rats, and studied pain perception using the model of acute thermal nociception. Commonly used anticonvulsants such as voltage-gated Na+ channel blockers, phenytoin and carbamazepine, and voltage-gated Ca2+ channel blockers, gabapentin and ethosuximide, induced dose-dependent analgesia in the injected paw, with ED50 values of 0.30, 0.32 and 8, 410 μg per 100 μl, respectively. Thermal nociceptive responses were not affected in the contralateral, noninjected paws, indicating a lack of systemic effects with doses of anticonvulsants that elicited local analgesia. Hill slope coefficients for the tested anticonvulsants indicate that the dose–response curve was less steep for gabapentin than for phenytoin, carbamazepine and ethosuximide. Our data strongly suggest that cellular targets like voltage-gated Na+ and Ca2+ channels, similar to those that mediate the effects of anticonvulsant agents in the CNS, may exist in the peripheral nerve endings of rat sensory neurons. Thus, peripherally applied anticonvulsants that block voltage-gated Na+ and Ca2+ channels may be useful analgesics. PMID:12970103

Chloride concentration affects Kv channel voltage-gating kinetics: Importance of experimental anion concentrations.

PubMed

Bekar, L K; Loewen, M E; Forsyth, G W; Walz, W

2005-09-30

Chloride concentration has been shown to have a dramatic impact on protein folding and subsequent tertiary conformation [K.D. Collins, Ions from the Hofmeister series and osmolytes: effects on proteins in solution and in the crystallization process, Methods 34 (2004) 300-311; I. Jelesarov, E. Durr, R.M. Thomas, H.R. Bosshard, Salt effects on hydrophobic interaction and charge screening in the folding of a negatively charged peptide to a coiled coil (leucine zipper), Biochemistry 37 (1998) 7539-7550]. As it is known that Kv channel gating is linked to the stability of the cytoplasmic T1 multimerization domain conformation [D.L. Minor, Y.F. Lin, B.C. Mobley, A. Avelar, Y.N. Jan, L.Y. Jan, J.M. Berger, The polar T1 interface is linked to conformational changes that open the voltage-gated potassium channel, Cell 102 (2000) 657-670; B.A. Yi, D.L. Minor Jr., Y.F. Lin, Y.N. Jan, L.Y. Jan, Controlling potassium channel activities: interplay between the membrane and intracellular factors, Proc. Natl. Acad. Sci. U.S.A. 98 (2001) 11016-11023] and that intracellular chloride concentration has been linked to Kv channel kinetics [L.K. Bekar, W. Walz, Intracellular chloride modulates A-type potassium currents in astrocytes, Glia 39 (2002) 207-216; W.B. Thoreson, S.L. Stella, Anion modulation of calcium current voltage dependence and amplitude in salamander rods, Biochim. Biophys. Acta 1464 (2000) 142-150], the objective of the present study was to address how chloride concentration changes affect Kv channel kinetics more closely in an isolated expression system. Initially, no significant chloride concentration-dependent effects on channel steady-state gating kinetics were observed. Only after disruption of the cytoskeleton with cytochalasin-D did we see significant chloride concentration-dependent shifts in gating kinetics. This suggests that the shift in gating kinetics is mediated through effects of intracellular chloride concentration on cytoplasmic domain tertiary conformation as cytoskeletal interaction appears to mask the effect. Furthermore, as cytoskeletal disruption only impacts channel gating kinetics at low physiological intracellular chloride concentrations, these studies highlight the importance of paying close attention to anion concentrations used under experimental conditions.

Effects of passive and active movement on vibrotactile detection thresholds of the Pacinian channel and forward masking.

PubMed

Yıldız, Mustafa Z; Toker, İpek; Özkan, Fatma B; Güçlü, Burak

2015-01-01

We investigated the gating effect of passive and active movement on the vibrotactile detection thresholds of the Pacinian (P) psychophysical channel and forward masking. Previous work on gating mostly used electrocutaneous stimulation and did not allow focusing on tactile submodalities. Ten healthy adults participated in our study. Passive movement was achieved by swinging a platform, on which the participant's stimulated hand was attached, manually by a trained operator. The root-mean-square value of the movement speed was kept in a narrow range (slow: 10-20 cm/s, fast: 50-60 cm/s). Active movement was performed by the participant him-/herself using the same apparatus. The tactile stimuli consisted of 250-Hz sinusoidal mechanical vibrations, which were generated by a shaker mounted on the movement platform and applied to the middle fingertip. In the forward-masking experiments, a high-level masking stimulus preceded the test stimulus. Each movement condition was tested separately in a two-interval forced-choice detection task. Both passive and active movement caused a robust gating effect, that is, elevation of thresholds, in the fast speed range. Statistically significant change of thresholds was not found in slow movement conditions. Passive movement yielded higher thresholds than those measured during active movement, but this could not be confirmed statistically. On the other hand, the effect of forward masking was approximately constant as the movement condition varied. These results imply that gating depends on both peripheral and central factors in the P channel. Active movement may have some facilitatory role and produce less gating. Additionally, the results support the hypothesis regarding a critical speed for gating, which may be relevant for daily situations involving vibrations transmitted through grasped objects and for manual exploration.

Ultrahigh near infrared photoresponsive organic field-effect transistors with lead phthalocyanine/C60 heterojunction on poly(vinyl alcohol) gate dielectric.

PubMed

Sun, Lei; Zhang, Jianping; Zhao, Feiyu; Luo, Xiao; Lv, Wenli; li, Yao; Ren, Qiang; Wen, Zhanwei; Peng, Yingquan; Liu, Xingyuan

2015-05-08

Performances of photoresponsive organic field-effect transistors (photOFETs) operating in the near infrared (NIR) region utilizing SiO2 as the gate dielectric is generally low due to low carrier mobility of the channel. We report on NIR photOFETs based on lead phthalocyanine (PbPc)/C60 heterojunction with ultrahigh photoresponsivity by utilizing poly(vinyl alcohol) (PVA) as the gate dielectric. For 808 nm NIR illumination of 1.69 mW cm(-2), an ultrahigh photoresponsivity of 21 A W(-1), and an external quantum efficiency of 3230% were obtained at a gate voltage of 30 V and a drain voltage of 80 V, which are 124 times and 126 times as large as the reference device with SiO2 as the gate dielectric, respectively. The ultrahigh enhancement of photoresponsivity is resulted from the huge increase of electron mobility of C60 film grown on PVA dielectric. AFM investigations revealed that the C60 film grown on PVA is much smooth and uniform and the grain size is much larger than that grown on SiO2 dielectric, which together results in four orders of magnitude increase of the field-effect electron mobility of C60 film.

The piezoelectric gating effect in a thin bent membrane with a two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Shevyrin, Andrey A.; Pogosov, Arthur G.

2018-05-01

Thin suspended nanostructures with a two-dimensional electron gas can be used as nanoelectromechanical systems in which electron transport is piezoelectrically coupled to mechanical motion and vibrations. Apart from practical applications, these systems are interesting for studying electron transport under unusual conditions, namely, in the presence of additional mechanical degrees of freedom. In the present paper, we analyze the influence of the bending on the density of a gated two-dimensional electron gas contained in a suspended membrane using the Thomas–Fermi approach and the model of pure electrostatic screening. We show that a small bending is analogous to a small change in gate voltages. Our calculations demonstrate that the density change is most prominent near the edges of the conductive channel created by negatively biased gates. When moving away from these edges, the bending-induced density change rapidly decays. We propose several methods to increase the magnitude of the effect, with the largest benefit obtained from coverage of the conductive channel with an additional grounded gate. It is shown that, for a conductive channel under a bare surface, the largest effect can be achieved if the two-dimensional electron gas is placed near the middle of the membrane thickness, despite the bending-induced strain is zero there.

GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang

2015-04-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V-1·s-1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

Respiratory-gated time-of-flight PET/CT during whole-body scan for lung lesions: feasibility in a routine clinical setting and quantitative analysis.

PubMed

Suzawa, Naohisa; Ichikawa, Yasutaka; Ishida, Masaki; Tomita, Yoya; Nakayama, Ryohei; Sakuma, Hajime

2016-12-01

To demonstrate the feasibility of respiratory gating during whole-body scan for lung lesions in routine 18 F-FDG PET/CT examinations using a time-of-flight (TOF)-capable scanner to determine the effect of respiratory gating on reduction of both misregistration (between CT and PET) and image blurring, and on improvement of the maximum standardized uptake value (SUVmax). Patients with lung lesions who received FDG PET/CT were prospectively studied. Misregistration, volume of PET (Vp), and SUVmax were compared between ungated and gated images. The difference in respiratory gating effects was compared between lesions located in the upper or middle lobes (UML) and the lower lobe (LL). The correlation between three parameters (% change in misregistration, % change in Vp, and lesion size) and % change in SUVmax was analyzed. The study population consisted of 60 patients (37 males, 23 females; age 68 ± 12 years) with lung lesions (2.5 ± 1.7 cm). Fifty-eight out of sixty respiratory gating studies were successfully completed with a total scan time of 20.9 ± 1.9 min. Eight patients' data were not suitable for analysis, while the remaining 50 patients' data were analyzed. Respiratory gating reduced both misregistration by 21.4 % (p < 0.001) and Vp by 14.2 % (p < 0.001). The SUVmax of gated images improved by 14.8 % (p < 0.001). The % change in misregistration, Vp, and SUVmax by respiratory gating tended to be larger in LL lesions than in UML lesions. The correlation with % change in SUVmax was stronger in % change in Vp (r = 0.57) than % change in misregistration (r = 0.35). There was no statistically significant correlation between lesion size and % change in SUVmax (r = -0.20). Respiratory gating during whole-body scan in routine TOF PET/CT examinations is feasible and can reduce both misregistration and PET image blurring, and improve the SUVmax of lung lesions located primarily in the LL.

Quantum computation with trapped ions in an optical cavity.

PubMed

Pachos, Jiannis; Walther, Herbert

2002-10-28

Two-qubit logical gates are proposed on the basis of two atoms trapped in a cavity setup and commonly addressed by laser fields. Losses in the interaction by spontaneous transitions are efficiently suppressed by employing adiabatic transitions and the quantum Zeno effect. Dynamical and geometrical conditional phase gates are suggested. This method provides fidelity and a success rate of its gates very close to unity. Hence, it is suitable for performing quantum computation.

Voltage-Boosting Driver For Switching Regulator

NASA Technical Reports Server (NTRS)

Trump, Ronald C.

1990-01-01

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

Spatial intensity distribution of controlled-NOT gate carrying orbital angular momentum via photonic band gap structure

NASA Astrophysics Data System (ADS)

Zhang, Yan; Wang, Xiaorui; Zhe Zhang, Yun

2018-07-01

By employing the different topological charges of a Laguerre–Gaussian beam as a qubit, we experimentally demonstrate a controlled-NOT (CNOT) gate with light beams carrying orbital angular momentum via a photonic band gap structure in a hot atomic ensemble. Through a degenerate four-wave mixing process, the spatial distribution of the CNOT gate including splitting and spatial shift can be affected by the Kerr nonlinear effect in multilevel atomic systems. Moreover, the intensity variations of the CNOT gate can be controlled by the relative phase modulation. This research can be useful for applications in quantum information processing.

Multi-element logic gates for trapped-ion qubits

NASA Astrophysics Data System (ADS)

Tan, T. R.; Gaebler, J. P.; Lin, Y.; Wan, Y.; Bowler, R.; Leibfried, D.; Wineland, D. J.

2015-12-01

Precision control over hybrid physical systems at the quantum level is important for the realization of many quantum-based technologies. In the field of quantum information processing (QIP) and quantum networking, various proposals discuss the possibility of hybrid architectures where specific tasks are delegated to the most suitable subsystem. For example, in quantum networks, it may be advantageous to transfer information from a subsystem that has good memory properties to another subsystem that is more efficient at transporting information between nodes in the network. For trapped ions, a hybrid system formed of different species introduces extra degrees of freedom that can be exploited to expand and refine the control of the system. Ions of different elements have previously been used in QIP experiments for sympathetic cooling, creation of entanglement through dissipation, and quantum non-demolition measurement of one species with another. Here we demonstrate an entangling quantum gate between ions of different elements which can serve as an important building block of QIP, quantum networking, precision spectroscopy, metrology, and quantum simulation. A geometric phase gate between a 9Be+ ion and a 25Mg+ ion is realized through an effective spin-spin interaction generated by state-dependent forces induced with laser beams. Combined with single-qubit gates and same-species entangling gates, this mixed-element entangling gate provides a complete set of gates over such a hybrid system for universal QIP. Using a sequence of such gates, we demonstrate a CNOT (controlled-NOT) gate and a SWAP gate. We further demonstrate the robustness of these gates against thermal excitation and show improved detection in quantum logic spectroscopy. We also observe a strong violation of a CHSH (Clauser-Horne-Shimony-Holt)-type Bell inequality on entangled states composed of different ion species.

Multi-element logic gates for trapped-ion qubits.

PubMed

Tan, T R; Gaebler, J P; Lin, Y; Wan, Y; Bowler, R; Leibfried, D; Wineland, D J

2015-12-17

Precision control over hybrid physical systems at the quantum level is important for the realization of many quantum-based technologies. In the field of quantum information processing (QIP) and quantum networking, various proposals discuss the possibility of hybrid architectures where specific tasks are delegated to the most suitable subsystem. For example, in quantum networks, it may be advantageous to transfer information from a subsystem that has good memory properties to another subsystem that is more efficient at transporting information between nodes in the network. For trapped ions, a hybrid system formed of different species introduces extra degrees of freedom that can be exploited to expand and refine the control of the system. Ions of different elements have previously been used in QIP experiments for sympathetic cooling, creation of entanglement through dissipation, and quantum non-demolition measurement of one species with another. Here we demonstrate an entangling quantum gate between ions of different elements which can serve as an important building block of QIP, quantum networking, precision spectroscopy, metrology, and quantum simulation. A geometric phase gate between a (9)Be(+) ion and a (25)Mg(+) ion is realized through an effective spin-spin interaction generated by state-dependent forces induced with laser beams. Combined with single-qubit gates and same-species entangling gates, this mixed-element entangling gate provides a complete set of gates over such a hybrid system for universal QIP. Using a sequence of such gates, we demonstrate a CNOT (controlled-NOT) gate and a SWAP gate. We further demonstrate the robustness of these gates against thermal excitation and show improved detection in quantum logic spectroscopy. We also observe a strong violation of a CHSH (Clauser-Horne-Shimony-Holt)-type Bell inequality on entangled states composed of different ion species.

The effect of split gate dimensions on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure

NASA Astrophysics Data System (ADS)

Smith, L. W.; Al-Taie, H.; Lesage, A. A. J.; Thomas, K. J.; Sfigakis, F.; See, P.; Griffiths, J. P.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

We use a multiplexing scheme to measure the conductance properties of 95 split gates of 7 different gate dimensions fabricated on a GaAs/AlGaAs chip, in a single cool down. The number of devices for which conductance is accurately quantized reduces as the gate length increases. However, even the devices for which conductance is accurately quantized in units of 2e2 / h show no correlation between the length of electrostatic potential barrier in the channel and the gate length, using a saddle point model to estimate the barrier length. Further, the strength of coupling between the gates and the 1D channel does not increase with gate length beyond 0.7 μm. The background electrostatic profile appears as significant as the gate dimension in determining device behavior. We find a clear correlation between the curvature of the electrostatic barrier along the channel and the strength of the ``0.7 anomaly'' which identifies the electrostatic length of the channel as the principal factor governing the conductance of the 0.7 anomaly. Present address: Wisconsin Institute for Quantum Information, University of Wisconsin-Madison, Madison, WI.

Assessing psychosocial correlates of parental safety behaviour using Protection Motivation Theory: stair gate presence and use among parents of toddlers.

PubMed

Beirens, T M J; Brug, J; van Beeck, E F; Dekker, R; den Hertog, P; Raat, H

2008-08-01

Unintentional injury due to falls is one of the main reasons for hospitalization among children 0-4 years of age. The goal of this study was to assess the psychosocial correlates of parental safety behaviours to prevent falls from a staircase due to the lack of or the lack of adequate use of a stair gate. Data were collected from a cross-sectional survey using self-administered questionnaires mailed to a population sample of 2470 parents with toddlers. Associations between self-reported habits on the presence and use of stair gates and family and psychosocial factors were analysed, using descriptive statistics and multiple regression models, based on Protection Motivation Theory. The presence of stair gates was associated with family situation, perceived vulnerability, response efficacy, social norms and descriptive norms. The use of stair gates was associated with family situation, response efficacy, self-efficacy and perceived advantages of safe behaviour. The full model explained 32 and 24% of the variance in the presence of stair gates and the use of stair gates, respectively, indicating a large and medium effect size. Programmes promoting the presence and adequate use of stair gates should address the family situation, personal cognitive factors as well as social factors.

Assessing psychosocial correlates of parental safety behaviour using Protection Motivation Theory: stair gate presence and use among parents of toddlers

PubMed Central

Beirens, T. M. J.; Brug, J.; van Beeck, E. F.; Dekker, R.; den Hertog, P.; Raat, H.

2008-01-01

Unintentional injury due to falls is one of the main reasons for hospitalization among children 0–4 years of age. The goal of this study was to assess the psychosocial correlates of parental safety behaviours to prevent falls from a staircase due to the lack of or the lack of adequate use of a stair gate. Data were collected from a cross-sectional survey using self-administered questionnaires mailed to a population sample of 2470 parents with toddlers. Associations between self-reported habits on the presence and use of stair gates and family and psychosocial factors were analysed, using descriptive statistics and multiple regression models, based on Protection Motivation Theory. The presence of stair gates was associated with family situation, perceived vulnerability, response efficacy, social norms and descriptive norms. The use of stair gates was associated with family situation, response efficacy, self-efficacy and perceived advantages of safe behaviour. The full model explained 32 and 24% of the variance in the presence of stair gates and the use of stair gates, respectively, indicating a large and medium effect size. Programmes promoting the presence and adequate use of stair gates should address the family situation, personal cognitive factors as well as social factors. PMID:17947245

Poly-Si TFTs integrated gate driver circuit with charge-sharing structure

NASA Astrophysics Data System (ADS)

Chen, Meng; Lei, Jiefeng; Huang, Shengxiang; Liao, Congwei; Deng, Lianwen

2017-06-01

A p-type low-temperature poly-Si thin film transistors (LTPS TFTs) integrated gate driver using 2 non-overlapped clocks is proposed. This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects. It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period. The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases. The proposed gate driver shows a simple circuit, as only 6 TFTs and 1 capacitor are used for single-stage, and the buffer TFT is used for both pulling-down and pulling-up of output electrode. Feasibility of the proposed gate driver is proven through detailed analyses. Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than 0.8 pF, and pulse of gate driver outputs can be reduced to 5 μs. The proposed gate driver can still function properly with positive {V}{TH} shift within 0.4 V and negative {V}{TH} shift within -1.2 V and it is robust and promising for high-resolution display. Project supported by the Science and Technology Project of Hunan Province, China (No. 2015JC3401)

Evaluation of the effect of gate strategies in drayage related emissions.

DOT National Transportation Integrated Search

2013-03-01

Intermodal Marine Container Terminals are experiencing growth in container volumes and are under pressure to : develop strategies to accommodate increasing demand. One of the major factors contributing to the problem is : inefficient gate operations ...

Dynamical decoupling of local transverse random telegraph noise in a two-qubit gate

NASA Astrophysics Data System (ADS)

D'Arrigo, A.; Falci, G.; Paladino, E.

2015-10-01

Achieving high-fidelity universal two-qubit gates is a central requisite of any implementation of quantum information processing. The presence of spurious fluctuators of various physical origin represents a limiting factor for superconducting nanodevices. Operating qubits at optimal points, where the qubit-fluctuator interaction is transverse with respect to the single qubit Hamiltonian, considerably improved single qubit gates. Further enhancement has been achieved by dynamical decoupling (DD). In this article we investigate DD of transverse random telegraph noise acting locally on each of the qubits forming an entangling gate. Our analysis is based on the exact numerical solution of the stochastic Schrödinger equation. We evaluate the gate error under local periodic, Carr-Purcell and Uhrig DD sequences. We find that a threshold value of the number, n, of pulses exists above which the gate error decreases with a sequence-specific power-law dependence on n. Below threshold, DD may even increase the error with respect to the unconditioned evolution, a behaviour reminiscent of the anti-Zeno effect.

Digital logic circuits in yeast with CRISPR-dCas9 NOR gates

PubMed Central

Gander, Miles W.; Vrana, Justin D.; Voje, William E.; Carothers, James M.; Klavins, Eric

2017-01-01

Natural genetic circuits enable cells to make sophisticated digital decisions. Building equally complex synthetic circuits in eukaryotes remains difficult, however, because commonly used components leak transcriptionally, do not arbitrarily interconnect or do not have digital responses. Here, we designed dCas9-Mxi1-based NOR gates in Saccharomyces cerevisiae that allow arbitrary connectivity and large genetic circuits. Because we used the chromatin remodeller Mxi1, our gates showed minimal leak and digital responses. We built a combinatorial library of NOR gates that directly convert guide RNA (gRNA) inputs into gRNA outputs, enabling the gates to be ‘wired' together. We constructed logic circuits with up to seven gRNAs, including repression cascades with up to seven layers. Modelling predicted the NOR gates have effectively zero transcriptional leak explaining the limited signal degradation in the circuits. Our approach enabled the largest, eukaryotic gene circuits to date and will form the basis for large, synthetic, cellular decision-making systems. PMID:28541304

High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

NASA Astrophysics Data System (ADS)

Seok, Ogyun; Kim, Hyoung Woo; Moon, Jeong Hyun; Lee, Hyun-Su; Bahng, Wook

2018-06-01

Lateral double-implanted MOSFETs (LDIMOSFETs) fabricated on on-axis high-purity semi-insulating (HPSI) 4H-SiC substrates with gate field plates have been demonstrated for the enhancement of reverse blocking capability. The effects of gate field plate on LDIMOSFET were analyzed by simulation and experimental methods. The electric field concentration at the gate edge was successfully suppressed by a gate field plate. A high breakdown voltage of 934 V and a figure of merit of 14.6 MW/cm2 were achieved at L FP of 2 µm and L drift of 15 µm, while those of the conventional device without a gate field plate were 744 V and 13.3 MW/cm2, respectively. Also, the fabricated device shows stable blocking characteristics at a high temperature of 250 °C. The drain leakage was increased by only 22% at 250 °C compared with that at room temperature.

On the mechanism of action of gated molecular baskets: The synchronicity of the revolving motion of gates and in/out trafficking of guests

PubMed Central

Hermann, Keith; Rieth, Stephen; Taha, Hashem A; Wang, Bao-Yu; Hadad, Christopher M

2012-01-01

Summary We used dynamic 1H NMR spectroscopic methods to examine the kinetics and thermodynamics of CH3CCl3 (2) entering and leaving the gated molecular basket 1. We found that the encapsulation is first-order in basket 1 and guest 2, while the decomplexation is zeroth-order in the guest. Importantly, the interchange mechanism in which a molecule of CH3CCl3 directly displaces the entrapped CH3CCl3 was not observed. Furthermore, the examination of the additivity of free energies characterizing the encapsulation process led to us to deduce that the revolving motion of the gates and in/out trafficking of guests is synchronized, yet still a function of the affinity of the guest for occupying the basket: Specifically, the greater the affinity of the guest for occupying the basket, the less effective the gates are in “sweeping” the guest as the gates undergo their revolving motion. PMID:22423275

Implementing universal nonadiabatic holonomic quantum gates with transmons

NASA Astrophysics Data System (ADS)

Hong, Zhuo-Ping; Liu, Bao-Jie; Cai, Jia-Qi; Zhang, Xin-Ding; Hu, Yong; Wang, Z. D.; Xue, Zheng-Yuan

2018-02-01

Geometric phases are well known to be noise resilient in quantum evolutions and operations. Holonomic quantum gates provide us with a robust way towards universal quantum computation, as these quantum gates are actually induced by non-Abelian geometric phases. Here we propose and elaborate how to efficiently implement universal nonadiabatic holonomic quantum gates on simpler superconducting circuits, with a single transmon serving as a qubit. In our proposal, an arbitrary single-qubit holonomic gate can be realized in a single-loop scenario by varying the amplitudes and phase difference of two microwave fields resonantly coupled to a transmon, while nontrivial two-qubit holonomic gates may be generated with a transmission-line resonator being simultaneously coupled to the two target transmons in an effective resonant way. Moreover, our scenario may readily be scaled up to a two-dimensional lattice configuration, which is able to support large scalable quantum computation, paving the way for practically implementing universal nonadiabatic holonomic quantum computation with superconducting circuits.

Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

NASA Astrophysics Data System (ADS)

Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

2016-11-01

In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment

NASA Astrophysics Data System (ADS)

Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke; Ikezoe, Ikuya; Ohmori, Yutaka

2013-04-01

We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.

Inhomogeneous screening of gate electric field by interface states in graphene FETs

NASA Astrophysics Data System (ADS)

Singh, Anil Kumar; Gupta, Anjan Kumar

2017-09-01

The electronic states at graphene-SiO2 interface and their inhomogeneity is investigated using the back-gate-voltage dependence of local tunnel spectra acquired with a scanning tunneling microscope. The conductance spectra show two, or occasionally three, minima that evolve along the bias-voltage axis with the back gate voltage. This evolution is modeled using tip-gating and interface states. The energy dependent interface states’ density, Dit(E) , required to model the back-gate evolution of the minima, is found to have significant inhomogeneity in its energy-width. A broad Dit(E) leads to an effect similar to a reduction in the Fermi velocity while the narrow Dit(E) leads to the pinning of the Fermi energy close to the Dirac point, as observed in some places, due to enhanced screening of the gate electric field by the narrow Dit(E) . Finally, this also demonstrates STM as a tool to probe the density of interface states in various 2D Dirac materials.

Design and fabrication of high-performance diamond triple-gate field-effect transistors

PubMed Central

Liu, Jiangwei; Ohsato, Hirotaka; Wang, Xi; Liao, Meiyong; Koide, Yasuo

2016-01-01

The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device’s electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET’s output current (174.2 mA mm−1) is much higher than that of the planar-type device (45.2 mA mm−1), and the on/off ratio and subthreshold swing are more than 108 and as low as 110 mV dec−1, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications. PMID:27708372

Leakage and field emission in side-gate graphene field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current densitymore » as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.« less

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

2013-11-01

This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

NASA Astrophysics Data System (ADS)

Myodo, Miho; Inaba, Masafumi; Ohara, Kazuyoshi; Kato, Ryogo; Kobayashi, Mikinori; Hirano, Yu; Suzuki, Kazuma; Kawarada, Hiroshi

2015-05-01

Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.

Comment on ''Carrier-concentration dependence of critical superconducting current induced by the proximity effect in silicon''

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kleinsasser, A.W.

1987-06-01

It is pointed out that effect of an applied gate voltage on the critical current observed in a gate-controlled Si-coupled weak link by Nishino, Yamada, and Kawabe (Phy. Rev. B 33, 2042 (1986)) is much larger than that expected from the small change of carrier density in the link.

Control of interlayer physics in 2H transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Wang, Kuang-Chung; Stanev, Teodor K.; Valencia, Daniel; Charles, James; Henning, Alex; Sangwan, Vinod K.; Lahiri, Aritra; Mejia, Daniel; Sarangapani, Prasad; Povolotskyi, Michael; Afzalian, Aryan; Maassen, Jesse; Klimeck, Gerhard; Hersam, Mark C.; Lauhon, Lincoln J.; Stern, Nathaniel P.; Kubis, Tillmann

2017-12-01

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers—depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.

PubMed

Stolichnov, Igor; Colla, Enrico; Setter, Nava; Wojciechowski, Tomasz; Janik, Elzbieta; Karczewski, Grzegorz

2006-12-15

Field effect transistors with ferroelectric gates would make ideal rewritable nonvolatile memories were it not for the severe problems in integrating the ferroelectric oxide directly on the semiconductor channel. We propose a powerful way to avoid these problems using a gate material that is ferroelectric and semiconducting simultaneously. First, ferroelectricity in semiconductor (Cd,Zn)Te films is proven and studied using modified piezoforce scanning probe microscopy. Then, a rewritable field effect device is demonstrated by local poling of the (Cd,Zn)Te layer of a (Cd,Zn)Te/CdTe quantum well, provoking a reversible, nonvolatile change in the resistance of the 2D electron gas. The results point to a potential new family of nanoscale one-transistor memories.

Mathematical Models of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field effect Transistor

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

2013-01-01

Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric- semiconductor field effect transistors (MOSFETs) are developed in this paper. The models are compared against data collected with MOSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth as well as differences and advantages as compared to the performance of each circuit using a MOSFET.

A Prospective Cohort Study of Gated Stereotactic Liver Radiation Therapy Using Continuous Internal Electromagnetic Motion Monitoring.

PubMed

Worm, Esben S; Høyer, Morten; Hansen, Rune; Larsen, Lars P; Weber, Britta; Grau, Cai; Poulsen, Per R

2018-06-01

Intrafraction motion can compromise the treatment accuracy in liver stereotactic body radiation therapy (SBRT). Respiratory gating can improve treatment delivery; however, gating based on external motion surrogates is inaccurate. The present study reports the use of Calypso-based internal electromagnetic motion monitoring for gated liver SBRT. Fifteen patients were included in a study of 3-fraction respiratory gated liver SBRT guided by 3 implanted electromagnetic transponders. The planning target volume was created by a 5-mm axial and 7-mm (n = 12) or 10-mm (n = 3) craniocaudal expansion of the clinical target volume (CTV) and covered with 67% of the prescribed CTV mean dose. Treatment was gated to the end-exhale phase of the respiratory cycle with beam-on when the target deviated <3 mm (left-right/anteroposterior) and 4 mm (craniocaudal) from the planned position, according to the monitored (25-Hz) transponder centroid position. The couch was adjusted remotely if baseline drifts >1 to 2 mm occurred. Log files of transponder motion were used to determine the geometric error and reconstruct the delivered CTV dose in the actual gated treatments and in simulated nongated treatments. No severe side effects were observed in relation to transponder implantation. All 45 treatment fractions were successfully guided using the Calypso system. The mean number of couch corrections during each gated fraction was 2.8 (range 0-7). The mean duty cycle during gated treatment was 62.5% (range 29.1%-84.9%). Without gating, the mean 3-dimensional geometric error during a fraction would have been 5.4 mm (range 2.7-12.1). Gating reduced this error to 2.0 mm (range 1.2-3.0). The patient mean reduction in minimum dose to 95% of the CTV relative to the planned dose was 6.0 percentage points (range 0.7-22.0) without gating and 0.8 percentage point (range 0.2-2.0) with gating. Gating using internal motion monitoring was successfully applied for liver SBRT. It markedly improved the geometric and dosimetric accuracy compared with nongated standard treatment. Copyright © 2018 Elsevier Inc. All rights reserved.

Impact of SiNx capping on the formation of source/drain contact for In-Ga-Zn-O thin film transistor with self-aligned gate

NASA Astrophysics Data System (ADS)

Oh, Himchan; Pi, Jae-Eun; Hwang, Chi-Sun; Kwon, Oh-Sang

2017-12-01

Self-aligned gate structures are preferred for faster operation and scaling down of thin film transistors by reducing the overlapped region between source/drain and gate electrodes. Doping on source/drain regions is essential to fabricate such a self-aligned gate thin film transistor. For oxide semiconductors such as In-Ga-Zn-O, SiNx capping readily increases their carrier concentration. We report that the SiNx deposition temperature and thickness significantly affect the device properties, including threshold voltage, field effect mobility, and contact resistance. The reason for these variations in device characteristics mainly comes from the extension of the doped region to the gated area after the SiNx capping step. Analyses on capacitance-voltage and transfer length characteristics support this idea.

Polycrystalline diamond RF MOSFET with MoO3 gate dielectric

NASA Astrophysics Data System (ADS)

Ren, Zeyang; Zhang, Jinfeng; Zhang, Jincheng; Zhang, Chunfu; Chen, Dazheng; Quan, Rudai; Yang, Jiayin; Lin, Zhiyu; Hao, Yue

2017-12-01

We report the radio frequency characteristics of the diamond metal-oxide-semiconductor field effect transistor with MoO3 gate dielectric for the first time. The device with 2-μm gate length was fabricated on high quality polycrystalline diamond. The maximum drain current of 150 mA/mm at VGS = -5 V and the maximum transconductance of 27 mS/mm were achieved. The extrinsic cutoff frequency of 1.2 GHz and the maximum oscillation frequency of 1.9 GHz have been measured. The moderate frequency characteristics are attributed to the moderate transconductance limited by the series resistance along the channel. We expect that the frequency characteristics of the device can be improved by increasing the magnitude of gm, or fundamentally decreasing the gate-controlled channel resistance and series resistance along the channel, and down-scaling the gate length.

Experimental fault-tolerant universal quantum gates with solid-state spins under ambient conditions

PubMed Central

Rong, Xing; Geng, Jianpei; Shi, Fazhan; Liu, Ying; Xu, Kebiao; Ma, Wenchao; Kong, Fei; Jiang, Zhen; Wu, Yang; Du, Jiangfeng

2015-01-01

Quantum computation provides great speedup over its classical counterpart for certain problems. One of the key challenges for quantum computation is to realize precise control of the quantum system in the presence of noise. Control of the spin-qubits in solids with the accuracy required by fault-tolerant quantum computation under ambient conditions remains elusive. Here, we quantitatively characterize the source of noise during quantum gate operation and demonstrate strategies to suppress the effect of these. A universal set of logic gates in a nitrogen-vacancy centre in diamond are reported with an average single-qubit gate fidelity of 0.999952 and two-qubit gate fidelity of 0.992. These high control fidelities have been achieved at room temperature in naturally abundant 13C diamond via composite pulses and an optimized control method. PMID:26602456

Inrush Current Suppression Circuit and Method for Controlling When a Load May Be Fully Energized

NASA Technical Reports Server (NTRS)

Schwerman, Paul (Inventor)

2017-01-01

A circuit and method for controlling when a load may be fully energized includes directing electrical current through a current limiting resistor that has a first terminal connected to a source terminal of a field effect transistor (FET), and a second terminal connected to a drain terminal of the FET. The gate voltage magnitude on a gate terminal of the FET is varied, whereby current flow through the FET is increased while current flow through the current limiting resistor is simultaneously decreased. A determination is made as to when the gate voltage magnitude on the gate terminal is equal to or exceeds a predetermined reference voltage magnitude, and the load is enabled to be fully energized when the gate voltage magnitude is equal to or exceeds the predetermined reference voltage magnitude.

Multi-images deconvolution improves signal-to-noise ratio on gated stimulated emission depletion microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Castello, Marco; DIBRIS, University of Genoa, Via Opera Pia 13, Genoa 16145; Diaspro, Alberto

2014-12-08

Time-gated detection, namely, only collecting the fluorescence photons after a time-delay from the excitation events, reduces complexity, cost, and illumination intensity of a stimulated emission depletion (STED) microscope. In the gated continuous-wave- (CW-) STED implementation, the spatial resolution improves with increased time-delay, but the signal-to-noise ratio (SNR) reduces. Thus, in sub-optimal conditions, such as a low photon-budget regime, the SNR reduction can cancel-out the expected gain in resolution. Here, we propose a method which does not discard photons, but instead collects all the photons in different time-gates and recombines them through a multi-image deconvolution. Our results, obtained on simulated andmore » experimental data, show that the SNR of the restored image improves relative to the gated image, thereby improving the effective resolution.« less

Gates Foundation donates $25 million for AIDS vaccine.

PubMed

1999-05-07

The International AIDS Vaccine Initiative (IAVI) received a $25 million five-year grant from Bill and Melinda Gates through the William H. Gates Foundation. This is the largest gift seen in the AIDS epidemic, and will allow IAVI to more than double vaccine development efforts. IAVI is currently developing two potential vaccines, hopes to study three others, and is working with the business community to insure that a successful vaccine is affordable in developing countries. With 16,000 new infections occurring daily, a vaccine is seen as the most effective way to stop the epidemic. The William H. Gates Foundation had donated $1.5 million to IAVI and $100 million for programs to speed the delivery of vaccines to children in poor countries. Internet addresses are included for both IAVI and the William H. Gates Foundation.

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

PubMed

Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

2013-10-04

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

Sensing small neurotransmitter-enzyme interaction with nanoporous gated ion-sensitive field effect transistors.

PubMed

Kisner, Alexandre; Stockmann, Regina; Jansen, Michael; Yegin, Ugur; Offenhäusser, Andreas; Kubota, Lauro Tatsuo; Mourzina, Yulia

2012-01-15

Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated and employed to sense the neurotransmitter dopamine with high selectivity and detectability at micromolar range. The nanoporous structure of the gates was produced by applying a relatively simple anodizing process, which yielded a porous alumina layer with pores exhibiting a mean diameter ranging from 20 to 35 nm. Gate-source voltages of the transistors demonstrated a pH-dependence that was linear over a wide range and could be understood as changes in surface charges during protonation and deprotonation. The large surface area provided by the pores allowed the physical immobilization of tyrosinase, which is an enzyme that oxidizes dopamine, on the gates of the transistors, and thus, changes the acid-base behavior on their surfaces. Concentration-dependent dopamine interacting with immobilized tyrosinase showed a linear dependence into a physiological range of interest for dopamine concentration in the changes of gate-source voltages. In comparison with previous approaches, a response time relatively fast for detecting dopamine was obtained. Additionally, selectivity assays for other neurotransmitters that are abundantly found in the brain were examined. These results demonstrate that the nanoporous structure of ion-sensitive field effect transistors can easily be used to immobilize specific enzyme that can readily and selectively detect small neurotransmitter molecule based on its acid-base interaction with the receptor. Therefore, it could serve as a technology platform for molecular studies of neurotransmitter-enzyme binding and drugs screening. Copyright © 2011 Elsevier B.V. All rights reserved.

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

NASA Astrophysics Data System (ADS)

Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

Effects of Geometrical and Flow Rates on the Prediction of Bottom Pressure Coefficients of Tunnel Lift Gate of Dams

NASA Astrophysics Data System (ADS)

Ameen, Sheeraz; Taher, Taha; Ahmed, Thamir M.

2018-06-01

Hydrostatics and hydrodynamics forces are generated and applied on the vertical lift tunnel gates due to the influence of a wide range of dam operating conditions. One of the most important forces is the uplift force resulting from the jet flow issuing below the gate. This force is based mainly upon many hydraulic and geometrical parameters. In this work, the uplift force is studied in terms of bottom pressure coefficient. The investigation is made paying particular attention on the effects of various three discharges and three gate lip angles on values of bottom pressure coefficients in addition to four different tunnel longitudinal slopes whose impact has not been studied in many previous works. Hydraulic model is constructed in this work for the sake of measuring all parameters required for estimating the bottom pressure coefficients, which are all examined against gate openings. The results show that the bottom pressure coefficient is related to the said variables, however, its behaviour and values are not necessary regular with variance of studied variables. The values are seen more significantly related to the flow rates and for some extent to the slopes of tunnel. An attempt by using the nonlinear regression of Statistical package of social sciences (SPSS) is made to set equations relating bottom pressure coefficient with gate openings for several angles of gate lips. The obtained equations are shown in good agreement with the selected cases of experimental results. The results are applicable for design purposes for similar geometrical and flow parameters considered in this study.

Reduction of the estimated radiation dose and associated patient risk with prospective ECG-gated 256-slice CT coronary angiography

NASA Astrophysics Data System (ADS)

Efstathopoulos, E. P.; Kelekis, N. L.; Pantos, I.; Brountzos, E.; Argentos, S.; Grebáč, J.; Ziaka, D.; Katritsis, D. G.; Seimenis, I.

2009-09-01

Computed tomography (CT) coronary angiography has been widely used since the introduction of 64-slice scanners and dual-source CT technology, but high radiation doses have been reported. Prospective ECG-gating using a 'step-and-shoot' axial scanning protocol has been shown to reduce radiation exposure effectively while maintaining diagnostic accuracy. 256-slice scanners with 80 mm detector coverage have been currently introduced into practice, but their impact on radiation exposure has not been adequately studied. The aim of this study was to assess radiation doses associated with CT coronary angiography using a 256-slice CT scanner. Radiation doses were estimated for 25 patients scanned with either prospective or retrospective ECG-gating. Image quality was assessed objectively in terms of mean CT attenuation at selected regions of interest on axial coronary images and subjectively by coronary segment quality scoring. It was found that radiation doses associated with prospective ECG-gating were significantly lower than retrospective ECG-gating (3.2 ± 0.6 mSv versus 13.4 ± 2.7 mSv). Consequently, the radiogenic fatal cancer risk for the patient is much lower with prospective gating (0.0176% versus 0.0737%). No statistically significant differences in image quality were observed between the two scanning protocols for both objective and subjective quality assessments. Therefore, prospective ECG-gating using a 'step-and-shoot' protocol that covers the cardiac anatomy in two axial acquisitions effectively reduces radiation doses in 256-slice CT coronary angiography without compromising image quality.

Scaling effects of a graphene field effect transistor for radiation detection

NASA Astrophysics Data System (ADS)

Shollar, Zachary Frank

Radiation detectors based on graphene is a burgeoning research topic within the immense field of graphene research. Although papers continue to parse out their mysteries, the devices remain simplistic and small. New fabrication techniques have allowed for millimeter scale and larger monolayer graphene sheets to be grown with increasingly better quality. It is the goal of this thesis to investigate the scaling effects of millimeter scale graphene for radiation detection purposes. To this end, chemical vapor deposition grown monolayer graphene was purchased and transferred to Si/SiO2 substrates. The devices were patterned into simple rectangular strips varying in size from 3000 x 500 mum, 600 x 100 mum, 300 x 50 mum, and 60 x 11 mum. Four metal contacts were patterned onto each strip for electrical characterization. Two probe resistance measurements were performed on all four sizes, at three different lengths along the graphene. Using the field effect, the graphene resistance response was measured at 0 V back-gate voltage to obtain graphene resistivity on SiO2, which showed an increase in resistivity as the graphene strip size increased. Further, the response was measured for varying back-gate sweep ranges and speeds. This lead to the conclusion that strong p-doping was inherent in the graphene strips, as evidenced by charge neutral points located above +50 V. Strong hysteresis observed in those tests alluded to trapped charge having a major effect on voltage sweeps. Mobility values for the graphene strips were extracted from the back-gate voltage sweeps and fixed gate voltage stabilization curves. Mobility values overall were less than 400 cm2 V-1 s-1, and showed a modest increase in mobility as graphene length increased. Lastly, the largest graphene strip had a light response and radiation response measured. Light response showed a dependence on gate voltage magnitude that favored positive gate voltages, on an n-type Silicon substrate. A saturation effect above +15 V seemed apparent with a resistance increase of only 0.61% +/- 0.062% for +15 V to 0.69% +/- 0.097% for the +50 V back-gate. Response of the largest graphene strip size to forward facing alpha irradiation showed a modest 0.32% +/- 0.082% increase in response, for a -15 V back- gate. Overall, millimeter scale graphene field effect devices showed a light and radiation response, proving their viability. However, results showed fabricated samples had numerous defects and were far from pristine. Fabrication of pristine graphene strips at millimeter scales is of concern. Further work into large scale GFET patterning, testing at more length and width dimensions, and further investigating metal contact and carrier transport in millimeter scales is needed.

Logical operations using phenyl ring

NASA Astrophysics Data System (ADS)

Patra, Moumita; Maiti, Santanu K.

2018-02-01

Exploiting the effects of quantum interference we put forward an idea of designing three primary logic gates, OR, AND and NOT, using a benzene molecule. Under a specific molecule-lead interface geometry, anti-resonant states appear which play the crucial role for AND and NOT operations, while for OR gate no such states are required. Our analysis leads to a possibility of designing logic gates using simple molecular structure which might be significant in the area of molecular electronics.

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Lin, H. C.; Yang, T.; Sharifi, H.; Kim, S. K.; Xuan, Y.; Shen, T.; Mohammadi, S.; Ye, P. D.

2007-11-01

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211 and 263mA/mm are obtained for 1μm gate-length Al2O3 MOS-HEMTs with 3 and 6nm thick gate oxide, respectively. C-V characteristic shows negligible hysteresis and frequency dispersion. The gate leakage current density of the MOS-HEMTs is 3-5 orders of magnitude lower than the conventional HEMTs under similar bias conditions. The drain current on-off ratio of MOS-HEMTs is ˜3×103 with a subthreshold swing of 90mV/decade. A maximum cutoff frequency (fT) of 27.3GHz and maximum oscillation frequency (fmax) of 39.9GHz and an effective channel mobility of 4250cm2/Vs are measured for the 1μm gate-length Al2O3 MOS-HEMT with 6nm gate oxide. Hooge's constant measured by low frequency noise spectral density characterization is 3.7×10-5 for the same device.

Molecular interactions involved in proton-dependent gating in KcsA potassium channels

PubMed Central

Posson, David J.; Thompson, Ameer N.; McCoy, Jason G.

2013-01-01

The bacterial potassium channel KcsA is gated open by the binding of protons to amino acids on the intracellular side of the channel. We have identified, via channel mutagenesis and x-ray crystallography, two pH-sensing amino acids and a set of nearby residues involved in molecular interactions that influence gating. We found that the minimal mutation of one histidine (H25) and one glutamate (E118) near the cytoplasmic gate completely abolished pH-dependent gating. Mutation of nearby residues either alone or in pairs altered the channel’s response to pH. In addition, mutations of certain pairs of residues dramatically increased the energy barriers between the closed and open states. We proposed a Monod–Wyman–Changeux model for proton binding and pH-dependent gating in KcsA, where H25 is a “strong” sensor displaying a large shift in pKa between closed and open states, and E118 is a “weak” pH sensor. Modifying model parameters that are involved in either the intrinsic gating equilibrium or the pKa values of the pH-sensing residues was sufficient to capture the effects of all mutations. PMID:24218397

A smart gelator as a chemosensor: application to integrated logic gates in solution, gel, and film.

PubMed

Xue, Pengchong; Lu, Ran; Jia, Junhui; Takafuji, Makoto; Ihara, Hirotaka

2012-03-19

A gelator that consisted of one benzimidazole moiety and four amide units was used as a chemosensor. We found that its absorption and emission spectra in solution were sensitive to two complementary chemical stimuli: protons and anions. Thus, YES and INH logic gates were obtained when absorbance was defined as an output. A combination gate of XNOR and AND with an emission output was also obtained. Moreover, wet gels in two solvents were used to construct two more-complicated three-input-three-output gates, owing to the existence of the gel phase as an additional output. Finally, in xerogel films that were formed from two kinds of wet gels, reversible changes in their emission spectra were observed when they were sequentially exposed to volatile acid and NH(3). Another combination two-output logic gate was obtained for xerogel films. Finally, three states of the gelator were used to construct not only basic logic gate, but also some combination gates because of their response to multiple chemical stimuli and their multiple output signals, in which one chemical input could erase the effect of another chemical input. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2011-07-31

This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills inmore » advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.« less

RF dual-gate-trench LDMOS on InGaAs with improved performance

NASA Astrophysics Data System (ADS)

Payal, M.; Singh, Y.

2018-02-01

A new power dual-gate-trench LDMOSFET (DGTLDMOS) structure implemented on emerging InGaAs material is proposed. The proposed device consists of two gates out of which one gate is placed horizontally on the surface while other gate is located vertically in a trench. The dual-gate structure of DGTLDMOS creates two channels in p-base which carry current simultaneously from drain to source. This not only enhances the drain current (ID) but also reduces specific on-resistance (Ron,sp) and improves the peak transconductance (gm) resulting higher cut-off frequency (fT) and maximum oscillation frequency (fmax). Another trench filled with Al2O3 is placed in the drift region between gate and drain to enhance reduced-surface-field effect leading to higher breakdown voltage (Vbr) even at increased drift region doping. Based on 2D simulations, it is demonstrate that a DGTLDMOS designed for Vbr of 90 V achieves 2.2 times higher ID, 10 times reduction in Ron,sp, 1.8 times improvement in gm, 2.8 times increase in fT, and 1.8 times improvement in fmax with 3.3 times reduction in cell pitch as compared to the conventional LDMOS.

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates.

PubMed

Dathbun, Ajjiporn; Kim, Youngchan; Kim, Seongchan; Yoo, Youngjae; Kang, Moon Sung; Lee, Changgu; Cho, Jeong Ho

2017-05-10

We demonstrated the fabrication of large-area ReS 2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS 2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS 2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS 2 transistors with graphene electrodes decreased dramatically compared with the SiO 2 -devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm 2 /(V s) and an on/off current ratio exceeding 10 4 . NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS 2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.